TW202040631A - Substrate drying chamber - Google Patents

Substrate drying chamber Download PDF

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TW202040631A
TW202040631A TW109101952A TW109101952A TW202040631A TW 202040631 A TW202040631 A TW 202040631A TW 109101952 A TW109101952 A TW 109101952A TW 109101952 A TW109101952 A TW 109101952A TW 202040631 A TW202040631 A TW 202040631A
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substrate
supercritical fluid
drying chamber
placement plate
fluid
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TW109101952A
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TWI738184B (en
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申熙鏞
尹炳文
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韓商無盡電子有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Solid Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to a substrate drying chamber including an upper housing, a lower housing openably coupled to the upper housing, a sealing part provided on a coupling surface of the lower housing and the upper housing, a substrate placement plate which is coupled to a bottom surface of the lower housing and on which a substrate on which an organic solvent is formed is arranged, an upper supply port formed to be directed to the substrate placement plate in a central region of the upper housing and configured to provide the supply path of the supercritical fluid for drying, an integrated supply/discharge port configured to provide a supply path of a supercritical fluid for initial pressurization and a discharge path of a mixed fluid in which the organic solvent is dissolved in the supercritical fluid for drying after drying according to a supply of the supercritical fluid for drying, and a heating member installed in the substrate placement plate and configured to operate when the supercritical fluid for initial pressurization is supplied and the mixed fluid is discharged to heat the supercritical fluid for initial pressurization and the mixed fluid.

Description

基板乾燥腔Substrate drying chamber

本發明係關於一種基板乾燥腔。更特定而言，本發明係關於一種能夠解決以下問題之技術：一待初始加壓超臨界流體歸因於由在引入至一乾燥腔中(初始加壓)時產生之一壓降引起之一冷卻現象而液化或汽化以引起一基板上之顆粒污染；及當排放(減壓)其中異丙醇(IPA)溶解於一待乾燥超臨界流體中之一混合流體時，該混合流體歸因於一冷卻效應而經歷相分離以引起基板上之顆粒污染，或形成於基板上之一圖案歸因於該混合流體之表面張力而塌陷。The invention relates to a substrate drying chamber. More specifically, the present invention relates to a technology that can solve the following problems: a supercritical fluid to be initially pressurized is caused by a pressure drop when introduced into a drying chamber (initial pressurization) The cooling phenomenon liquefies or vaporizes to cause particle contamination on a substrate; and when a mixed fluid in which isopropyl alcohol (IPA) is dissolved in a supercritical fluid to be dried is discharged (decompression), the mixed fluid is attributed to A cooling effect undergoes phase separation to cause particle contamination on the substrate, or a pattern formed on the substrate collapses due to the surface tension of the mixed fluid.

一半導體器件之一製造程序包含各種程序，諸如一微影程序、一蝕刻程序、一離子植入程序及類似者。在各程序終止之後及在執行一後續程序之前，執行一清潔程序及一乾燥程序以移除留於一晶圓表面上之雜質及殘留物以清潔晶圓表面。A manufacturing process of a semiconductor device includes various processes, such as a lithography process, an etching process, an ion implantation process, and the like. After each process is terminated and before performing a subsequent process, a cleaning process and a drying process are performed to remove impurities and residues remaining on the surface of a wafer to clean the surface of the wafer.

例如，在一蝕刻程序之後的一晶圓之一清潔程序中，將用於清潔程序之一化學液體供應至一晶圓表面上，且接著供應去離子水(DIW)使得執行沖洗處理。在沖洗處理之後，執行乾燥程序以移除留於晶圓表面上之DIW以乾燥晶圓。For example, in a cleaning process of a wafer after an etching process, a chemical liquid used for the cleaning process is supplied to a surface of a wafer, and then deionized water (DIW) is supplied to perform a rinse process. After the rinsing process, a drying process is performed to remove the DIW remaining on the wafer surface to dry the wafer.

例如，已知一種藉由用異丙醇(IPA)置換一晶圓上之DIW來乾燥一晶圓之技術作為一種執行乾燥處理之方法。For example, a technique of drying a wafer by replacing DIW on a wafer with isopropyl alcohol (IPA) is known as a method of performing a drying process.

然而，如圖1中所展示，根據此一習知乾燥技術，在乾燥處理期間，發生形成於晶圓上之一圖案歸因於作為一液體之IPA之表面張力而塌陷之一問題。However, as shown in FIG. 1, according to this conventional drying technology, during the drying process, a problem occurs that a pattern formed on the wafer collapses due to the surface tension of IPA as a liquid.

為了解決上述問題，已提出一種其中表面張力變為零之超臨界乾燥技術。In order to solve the above problems, a supercritical drying technique in which the surface tension becomes zero has been proposed.

根據此一超臨界乾燥技術，將處於一超臨界狀態之二氧化碳(CO2 )供應至其表面在一腔內被IPA潤濕之一晶圓使得晶圓上之IPA溶解於一超臨界CO2 流體中。接著，自該腔逐漸排放溶解有IPA之超臨界CO2 流體使得可乾燥晶圓而一圖案不會塌陷。According to this supercritical drying technology, carbon dioxide (CO 2 ) in a supercritical state is supplied to a wafer whose surface is wetted by IPA in a cavity so that the IPA on the wafer is dissolved in a supercritical CO 2 fluid in. Then, the supercritical CO 2 fluid in which IPA is dissolved is gradually discharged from the cavity so that the wafer can be dried without a pattern collapse.

同時，當超臨界流體在一高壓下儲存於設置於一乾燥腔外部之一超臨界流體產生器中且接著透過一管線及一閥引入至乾燥腔中(初始加壓)時，歸因於一壓降而在閥及管線之一連接部分中發生一冷卻現象使得存在超臨界流體可液化或汽化以引起基板上之顆粒污染之一問題。特定而言，當增加一加壓速率時，存在至超臨界流體之一充分熱轉移僅歸因於透過一簡化熱交換器維持管線之一溫度而不足之一問題。At the same time, when the supercritical fluid is stored under a high pressure in a supercritical fluid generator arranged outside a drying chamber and then introduced into the drying chamber through a pipeline and a valve (initial pressurization), it is due to a The pressure drop causes a cooling phenomenon in a connecting part of the valve and the pipeline to cause a problem that the supercritical fluid can be liquefied or vaporized to cause particle contamination on the substrate. In particular, when increasing a pressurization rate, there is a problem that sufficient heat transfer to the supercritical fluid is only due to the insufficient maintenance of a temperature of the pipeline through a simplified heat exchanger.

此外，當其中IPA溶解於待乾燥超臨界流體中之混合流體自乾燥腔排放(減壓)且歸因於一冷卻效應而經歷相分離時，可歸因於基板之顆粒污染或混合流體之表面張力而發生形成於基板上之一圖案之塌陷。具體而言，當一溫度及一壓力歸因於大於或等於一臨界點之一高壓區中之快速絕熱膨脹而下降至臨界點以下時，處於單相之混合流體經歷相分離可引起基板上之一乾燥缺陷(諸如顆粒污染或類似者)，且亦可引起基板之圖案塌陷。In addition, when the mixed fluid in which the IPA is dissolved in the supercritical fluid to be dried is discharged from the drying chamber (decompression) and undergoes phase separation due to a cooling effect, it can be attributed to particle contamination of the substrate or the surface of the mixed fluid Tension causes the collapse of a pattern formed on the substrate. Specifically, when a temperature and a pressure drop below the critical point due to rapid adiabatic expansion in a high-pressure zone greater than or equal to a critical point, the mixed fluid in a single phase undergoes phase separation, which can cause the substrate A drying defect (such as particle contamination or the like) can also cause the pattern of the substrate to collapse.

圖2繪示韓國專利特許公開申請案第10-2017-0137243號(其係結合一基板處理裝置使用此一超臨界流體之先前技術)中所揭示之一基板處理腔。FIG. 2 shows a substrate processing chamber disclosed in Korean Patent Laid-Open Application No. 10-2017-0137243 (which is a prior art using this supercritical fluid in conjunction with a substrate processing device).

參考圖2，在一超臨界乾燥程序中移除一有機溶劑之一程序中，可將一有機溶劑引入至一耦合表面上，在該耦合表面上構成一高壓腔410之一上主體430及一下主體420彼此接觸。引入至上主體430及下主體420之耦合表面中之有機溶劑變成累積於耦合表面周圍之顆粒。Referring to FIG. 2, in a process of removing an organic solvent in a supercritical drying process, an organic solvent can be introduced onto a coupling surface on which a high pressure cavity 410, an upper body 430 and a lower body are formed. The main bodies 420 are in contact with each other. The organic solvent introduced into the coupling surface of the upper body 430 and the lower body 420 becomes particles accumulated around the coupling surface.

在超臨界乾燥程序終止之後，敞開高壓腔410以將經處理基板返回至外部。在此情況下，歸因於高壓腔410之一內部與其外部之間的一壓差，上主體430及下主體420之耦合表面周圍之顆粒可經引入至高壓腔410之內部中。After the supercritical drying process is terminated, the high pressure chamber 410 is opened to return the processed substrate to the outside. In this case, due to a pressure difference between the inside of one of the high pressure chambers 410 and the outside, particles around the coupling surfaces of the upper body 430 and the lower body 420 can be introduced into the inside of the high pressure chamber 410.

根據韓國專利特許公開申請案第10-2017-0137243號，由於一基板經定位於上主體430及下主體420之耦合表面下方，而上主體430及下主體420之耦合表面周圍之顆粒經引入至高壓腔410之內部中，因此存在一些顆粒歸因於重力而引入至基板上之一高概率。According to Korean Patent Application No. 10-2017-0137243, since a substrate is positioned below the coupling surface of the upper body 430 and the lower body 420, the particles around the coupling surface of the upper body 430 and the lower body 420 are introduced to In the interior of the high pressure chamber 410, there is therefore a high probability that some particles are introduced onto the substrate due to gravity.

如上文所描述，由於引入至基板上之顆粒引起一程序缺陷以便防止引入顆粒，因此必需另外將一阻擋簾安裝於上主體430及下主體420之耦合表面周圍。據此，存在裝置之一總體結構複雜之一問題。As described above, since the particles introduced onto the substrate cause a process defect in order to prevent the introduction of particles, it is necessary to additionally install a barrier curtain around the coupling surfaces of the upper body 430 and the lower body 420. Accordingly, there is a problem that the overall structure of one of the devices is complicated.

此外，根據包含韓國專利特許公開申請案第10-2017-0137243號之先前技術，由於用於供應一待初始加壓超臨界流體之一下供應埠422及用於在乾燥之後排放超臨界流體之一排放埠426未經定位於下主體420之一中心處，因此當供應及排放超臨界流體時，形成超臨界流體之一非對稱流使得難以在高壓腔410中均勻地分佈及供應超臨界流體且自高壓腔410排放超臨界流體。因此，發生乾燥效率降級之一問題。In addition, according to the prior art including Korean Patent Laid-Open Application No. 10-2017-0137243, one of the lower supply ports 422 is used to supply a supercritical fluid to be initially pressurized and one of the supercritical fluids is discharged after drying. The discharge port 426 is not positioned at a center of the lower body 420, so when the supercritical fluid is supplied and discharged, an asymmetric flow of the supercritical fluid is formed, making it difficult to uniformly distribute and supply the supercritical fluid in the high pressure chamber 410 and The supercritical fluid is discharged from the high pressure chamber 410. Therefore, one of the problems of degradation of drying efficiency occurs.

(先前技術文件)(Prior Technical Document)

(專利文件)(Patent Document)

(專利文件1)韓國專利特許公開申請案第10-2017-0137243號(公開日期：2017年12月13日，標題：Apparatus and method for treating substrate)。(Patent Document 1) Korean Patent Publication Application No. 10-2017-0137243 (Publication Date: December 13, 2017, Title: Apparatus and method for treating substrate).

1.技術問題1. Technical issues

本發明之一技術目的係解決以下問題：一待初始加壓超臨界流體歸因於在設置於一乾燥腔外部之一超臨界流體產生器中透過一管線及一閥引入至一乾燥腔(初始加壓)時由在管線及閥之一連接部分周圍產生之一壓降引起之一冷卻現象而液化或汽化，由此引起一基板上之顆粒污染。One of the technical objectives of the present invention is to solve the following problem: a supercritical fluid to be initially pressurized is introduced into a drying chamber through a pipeline and a valve in a supercritical fluid generator arranged outside a drying chamber (initial During pressurization, a pressure drop is generated around a connecting part of the pipeline and the valve, which causes a cooling phenomenon to liquefy or vaporize, thereby causing particle contamination on a substrate.

本發明之另一技術目的係解決以下問題：當自一乾燥腔排放(減壓)其中異丙醇(IPA)溶解於一待乾燥超臨界流體中之一混合流體時，該混合流體歸因於一冷卻效應而經歷相分離以引起基板上之顆粒污染，或形成於基板上之一圖案歸因於該混合流體之表面張力而塌陷。Another technical objective of the present invention is to solve the following problem: when a mixed fluid in which isopropyl alcohol (IPA) is dissolved in a supercritical fluid to be dried is discharged (decompressed) from a drying chamber, the mixed fluid is due to A cooling effect undergoes phase separation to cause particle contamination on the substrate, or a pattern formed on the substrate collapses due to the surface tension of the mixed fluid.

本發明之又一技術目的係透過一個整合式供應/排放埠提供一待初始加壓超臨界流體之一供應路徑及溶解有在乾燥之後形成於一基板上之一有機溶劑之一超臨界流體之一排放路徑，由此藉由在供應及排放超臨界流體時引發一對稱流以在一腔中均勻地分佈及供應超臨界流體且自該腔排放超臨界流體來增加基板乾燥效率。Another technical purpose of the present invention is to provide a supply path of a supercritical fluid to be initially pressurized through an integrated supply/discharge port and dissolve a supercritical fluid with an organic solvent formed on a substrate after drying. A discharge path thereby increases the substrate drying efficiency by inducing a symmetrical flow when supplying and discharging the supercritical fluid to uniformly distribute and supply the supercritical fluid in a cavity and discharge the supercritical fluid from the cavity.

本發明之又一技術目的係藉由以下步驟減少一乾燥程序時間：使用基板放置必不可少之一基板放置板阻擋在一乾燥程序終止之後敞開腔時再引入之顆粒；阻擋待初始加壓超臨界流體之一流在乾燥程序之一初始階段直接朝向一基板表面以防止形成於基板上之一圖案塌陷；防止待初始加壓超臨界流體中可含有之顆粒沈積於基板上之一問題或減少顆粒之一沈積量；及歸因於基板放置板所佔據之一體積而減少該腔之一工作體積。Another technical purpose of the present invention is to reduce the time of a drying process by the following steps: use a substrate placement plate, which is essential for substrate placement, to block particles introduced when the cavity is opened after a drying process is terminated; A flow of the critical fluid directly faces the surface of a substrate at the initial stage of the drying process to prevent a pattern formed on the substrate from collapsing; prevent particles contained in the supercritical fluid to be initially pressurized from being deposited on the substrate, or reduce particles A deposition amount; and a working volume of the cavity is reduced due to a volume occupied by the substrate placement plate.

本發明之又一技術目的係：當乾燥程序終止及該腔敞開時，藉由將基板配置於基板放置板上以便定位成高於一下殼體及一上殼體之一耦合表面，防止設置於下殼體及上殼體之耦合表面上之一密封部件周圍之顆粒歸因於根據基板與耦合表面之間的一高度差之重力而引入至基板上之一問題。 2.問題解決方案Another technical purpose of the present invention is: when the drying process is terminated and the cavity is opened, by disposing the substrate on the substrate placement plate so as to be positioned higher than the coupling surface of the lower casing and the upper casing, preventing it from being disposed on the The particles around one of the sealing components on the coupling surface of the lower casing and the upper casing are due to a problem of being introduced onto the substrate due to gravity based on a height difference between the substrate and the coupling surface. 2. Problem solution

一種根據本發明之基板乾燥腔包含：一上殼體；一下殼體，其可開閉自如地耦合至該上殼體；一密封部件，其經設置於該下殼體及該上殼體之一耦合表面上；一基板放置板，其經耦合至該下殼體之一底表面且其上配置形成有一有機溶劑之一基板；一上供應埠，其經形成為在該上殼體之一中央區中指向該基板放置板且經構形以提供一待乾燥超臨界流體之一供應路徑；一整合式供應/排放埠，其經構形以根據該待乾燥超臨界流體之一供應提供一待初始加壓超臨界流體之一供應路徑及在乾燥之後其中該有機溶劑溶解於該待乾燥超臨界流體中之一混合流體之一排放路徑；及一加熱構件，其經安裝於該基板放置板中且經構形以在供應該待初始加壓超臨界流體及排放該混合流體時操作以加熱該待初始加壓超臨界流體及該混合流體。A substrate drying chamber according to the present invention includes: an upper casing; a lower casing, which can be opened and closed freely coupled to the upper casing; and a sealing member disposed on one of the lower casing and the upper casing On the coupling surface; a substrate placement plate, which is coupled to a bottom surface of the lower shell and a substrate with an organic solvent formed thereon; an upper supply port, which is formed in the center of one of the upper shells The area points to the substrate placement plate and is configured to provide a supply path of a supercritical fluid to be dried; an integrated supply/discharge port, which is configured to provide a supply path according to a supply of the supercritical fluid to be dried A supply path of the initially pressurized supercritical fluid and a discharge path of a mixed fluid in which the organic solvent is dissolved in the supercritical fluid to be dried after drying; and a heating member installed in the substrate placement plate And it is configured to operate when supplying the supercritical fluid to be initially pressurized and discharging the mixed fluid to heat the supercritical fluid to be initially pressurized and the mixed fluid.

在根據本發明之基板乾燥腔中，其特徵在於該加熱構件在一初始加壓時間期間操作，在該初始加壓時間期間供應該待初始加壓超臨界流體以將該待初始加壓超臨界流體之一溫度調整為大於或等於一臨界點。In the substrate drying chamber according to the present invention, it is characterized in that the heating member operates during an initial pressurization time, and the supercritical fluid to be initially pressurized is supplied during the initial pressurization time to supercritical fluid to be initially pressurized. The temperature of a fluid is adjusted to be greater than or equal to a critical point.

在根據本發明之基板乾燥腔中，其特徵在於該加熱構件在一排放時間期間操作，在該排放時間期間排放該混合流體以補償根據歸因於在該混合流體之該排放期間產生之一壓降之絕熱膨脹產生之一溫降，由此將該混合流體中所含有之該待乾燥超臨界流體之一溫度調整為大於或等於一臨界點。In the substrate drying chamber according to the present invention, it is characterized in that the heating member operates during a discharge time during which the mixed fluid is discharged to compensate according to a pressure attributable to a pressure generated during the discharge of the mixed fluid The reduced adiabatic expansion produces a temperature drop, thereby adjusting a temperature of the supercritical fluid to be dried contained in the mixed fluid to be greater than or equal to a critical point.

在根據本發明之基板乾燥腔中，其特徵在於該整合式供應/排放埠經形成以自該下殼體之一個側表面延伸至另一側表面且經形成為在該一個側表面及該另一側表面之一中間區中指向該基板放置板。In the substrate drying chamber according to the present invention, it is characterized in that the integrated supply/discharge port is formed to extend from one side surface to the other side surface of the lower housing and is formed to be between the one side surface and the other side surface. A board is placed in a middle area of one side surface pointing to the substrate.

在根據本發明之基板乾燥腔中，其特徵在於該整合式供應/排放埠可包含：一第一管線，其自該下殼體之該一個側表面形成至該中間區；一共同埠，其經構形以在該中間區中與該第一管線連通且經形成為指向該基板放置板；及一第二管線，其經構形以在該中間區中與該共同埠及該第一管線連通且經形成為朝向該下殼體之該另一側表面。In the substrate drying chamber according to the present invention, it is characterized in that the integrated supply/discharge port may include: a first pipeline formed from the side surface of the lower casing to the middle area; a common port Is configured to communicate with the first pipeline in the intermediate zone and is formed to point toward the substrate placement plate; and a second pipeline configured to communicate with the common port and the first pipeline in the intermediate zone Connected and formed to face the other side surface of the lower casing.

在根據本發明之基板乾燥腔中，其特徵在於該第一管線及該共同埠提供該待初始加壓超臨界流體之該供應路徑，且該共同埠及該第二管線提供溶解有該有機溶劑之該超臨界流體之該排放路徑。In the substrate drying chamber according to the present invention, it is characterized in that the first pipeline and the common port provide the supply path of the supercritical fluid to be initially pressurized, and the common port and the second pipeline provide the organic solvent dissolved in it The discharge path of the supercritical fluid.

在根據本發明之基板乾燥腔中，其特徵在於該基板經配置於該基板放置板上以定位成高於該下殼體及該上殼體之該耦合表面，且當該乾燥程序終止以及該下殼體及該上殼體敞開時，防止設置於該耦合表面上之該密封部件周圍之顆粒歸因於根據該基板與該耦合表面之間的一高度差之重力而引入至該基板上。In the substrate drying chamber according to the present invention, it is characterized in that the substrate is disposed on the substrate placement plate to be positioned higher than the coupling surface of the lower casing and the upper casing, and when the drying process is terminated and the When the lower shell and the upper shell are opened, the particles around the sealing member disposed on the coupling surface are prevented from being introduced onto the substrate due to gravity according to a height difference between the substrate and the coupling surface.

在根據本發明之基板乾燥腔中，其特徵在於可由該基板放置板阻擋透過一第一管線及一共同埠供應之該待初始加壓超臨界流體使得防止該待初始加壓超臨界流體直接注入至該基板上。In the substrate drying chamber according to the present invention, it is characterized in that the substrate placement plate can block the supercritical fluid to be initially pressurized supplied through a first pipeline and a common port so as to prevent the supercritical fluid to be initially pressurized from being directly injected To the substrate.

根據本發明之基板乾燥腔可進一步包含一基板放置板支撐件，該基板放置板支撐件具有耦合至該下殼體之該底表面之一端及耦合至該基板放置板之另一端且經構形以在支撐該基板放置板時將該基板放置板與該下殼體之該底表面分離。The substrate drying chamber according to the present invention may further include a substrate placement board support having one end coupled to the bottom surface of the lower housing and the other end coupled to the substrate placement board and is configured When supporting the substrate placing plate, the substrate placing plate is separated from the bottom surface of the lower casing.

在根據本發明之基板乾燥腔中，其特徵在於歸因於該基板放置板支撐件而存在於該下殼體之該底表面與該基板放置板之間的一第一分離空間可引發透過該整合式供應/排放埠供應之該待初始加壓超臨界流體沿該基板放置板之一底表面移動以逐漸擴散至配置有該基板之一處理區域中。In the substrate drying chamber according to the present invention, it is characterized in that a first separation space existing between the bottom surface of the lower housing and the substrate placing plate due to the substrate placing plate support can cause the penetration of the The initial pressurized supercritical fluid supplied by the integrated supply/discharge port moves along a bottom surface of the substrate placement plate to gradually diffuse into a processing area where the substrate is disposed.

根據本發明之基板乾燥腔可進一步包含一基板支撐件，該基板支撐件具有耦合至該基板放置板之一頂表面之一端及耦合至該基板之另一端且經構形以在支撐該基板時將該基板與該基板放置板之該頂表面分離。The substrate drying chamber according to the present invention may further include a substrate supporter having one end coupled to a top surface of the substrate placement plate and the other end coupled to the substrate and configured to support the substrate The substrate is separated from the top surface of the substrate placement board.

在根據本發明之基板乾燥腔中，其特徵在於歸因於該基板支撐件而存在於該基板放置板之該頂表面與該基板之間的一第二分離空間將該基板之該底表面暴露於透過該整合式供應/排放埠供應之該待初始加壓超臨界流體及透過該上供應埠供應之該待乾燥超臨界流體，由此減少該乾燥程序之一時間。 3.有利效應In the substrate drying chamber according to the present invention, it is characterized in that a second separation space existing between the top surface of the substrate placement plate and the substrate due to the substrate support exposes the bottom surface of the substrate The supercritical fluid to be initially pressurized supplied through the integrated supply/discharge port and the supercritical fluid to be dried supplied through the upper supply port, thereby reducing one time of the drying process. 3. Favorable effects

根據本發明，存在以下有利效應：一待初始加壓超臨界流體歸因於在設置於一乾燥腔外部之一超臨界流體產生器中透過一管線及一閥引入至乾燥腔(初始加壓)時由管線及閥之一連接部分周圍產生之一壓降引起之一冷卻現象而液化或汽化，由此引起一基板上之顆粒污染。According to the present invention, there are the following advantageous effects: a supercritical fluid to be initially pressurized is due to introduction into the drying chamber through a pipeline and a valve in a supercritical fluid generator arranged outside a drying chamber (initial pressurization) At this time, a pressure drop around a connecting part of the pipeline and the valve causes a cooling phenomenon to liquefy or vaporize, thereby causing particle contamination on a substrate.

另外，存在以下有利效應：當排放(減壓)其中異丙醇(IPA)溶解於一待乾燥超臨界流體中之一混合流體時，該混合流體歸因於一冷卻效應而經歷相分離以引起基板上之顆粒污染，或形成於基板上之一圖案歸因於該混合流體之表面張力而塌陷。In addition, there is the following advantageous effect: when a mixed fluid in which isopropyl alcohol (IPA) is dissolved in a supercritical fluid to be dried is discharged (reduced pressure), the mixed fluid undergoes phase separation due to a cooling effect to cause Particle contamination on the substrate or a pattern formed on the substrate collapses due to the surface tension of the mixed fluid.

再者，根據本發明，存在以下有利效應：可透過一個整合式供應/排放埠提供一待初始加壓超臨界流體之一供應路徑及溶解有在乾燥之後形成於基板之一有機溶劑之一超臨界流體之一排放路徑，由此可藉由在供應及排放超臨界流體時引發一對稱流以在一腔中均勻地分佈及供應超臨界流體且自該腔排放超臨界流體來增加基板乾燥效率。Furthermore, according to the present invention, there are the following advantageous effects: a supply path of a supercritical fluid to be initially pressurized can be provided through an integrated supply/discharge port and a supercritical fluid that is dissolved in an organic solvent formed on the substrate after drying A discharge path of the critical fluid, which can increase the substrate drying efficiency by inducing a symmetrical flow when supplying and discharging the supercritical fluid to uniformly distribute and supply the supercritical fluid in a cavity and discharge the supercritical fluid from the cavity .

此外，存在可藉由以下步驟減少乾燥程序之一時間使得可防止形成於基板上之一圖案塌陷之一有利效應：使用配置基板(其係乾燥程序之一目標)必不可少之一基板放置板阻擋在乾燥程序終止之後敞開腔時再引入之顆粒及阻擋待初始加壓超臨界流體之一流在乾燥程序之一初始階段直接朝向基板之一表面；防止待初始加壓超臨界流體中可含有之顆粒沈積於基板上之一問題；減少顆粒之一沈積量；及歸因於基板放置板所佔據之一體積而減少該腔之一工作體積。In addition, there is an advantageous effect that one of the drying procedures can be reduced by the following steps so that a pattern formed on the substrate can be prevented from collapsing: the use of a configuration substrate (which is one of the objectives of the drying procedure) is an essential substrate placement board Block the particles introduced when the cavity is opened after the drying process is terminated and block the flow of the supercritical fluid to be initially pressurized directly toward a surface of the substrate at the initial stage of the drying process; prevent the supercritical fluid to be initially pressurized from being contained A problem of particle deposition on the substrate; reducing the amount of particle deposition; and reducing a working volume of the cavity due to a volume occupied by the substrate placement plate.

此外，存在以下有利效應：當乾燥程序終止及該腔敞開時，可藉由將基板配置於基板放置板上以便定位成高於一下殼體及一上殼體之一耦合表面，防止設置於下殼體及上殼體之耦合表面上之一密封部件周圍之顆粒歸因於根據基板與耦合表面之間的一高度差之重力而引入至基板上之一問題。In addition, there is the following advantageous effect: when the drying process is terminated and the cavity is opened, the substrate can be placed on the substrate placement plate so as to be positioned higher than the coupling surface of the lower casing and the upper casing to prevent the substrate The particles around one of the sealing components on the coupling surface of the housing and the upper housing are due to a problem of being introduced onto the substrate due to gravity based on a height difference between the substrate and the coupling surface.

本文中所揭示之本發明之實施例之特定結構及功能描述出於描述根據本發明之概念之實施例之目的而僅係闡釋性的，且根據本發明之概念之此等實施例可以各種形式實施且不應被解釋為限於本文中所描述之實施例。The specific structure and function descriptions of the embodiments of the present invention disclosed herein are only illustrative for the purpose of describing embodiments according to the concept of the present invention, and these embodiments according to the concept of the present invention may be in various forms Implementation and should not be construed as being limited to the embodiments described herein.

根據本發明之概念之實施例可以各種方式修改且可具有各種形式使得此等實施例將在圖式中繪示且在本文中詳細描述。然而，應理解，此並非意欲於將根據本發明之概念之實施例限於特定揭示形式，而是包含落入本發明之精神及範疇內之所有修改、等效物及替代物。The embodiments according to the concept of the present invention may be modified in various ways and may have various forms such that such embodiments will be illustrated in the drawings and described in detail herein. However, it should be understood that this is not intended to limit the embodiments according to the concept of the present invention to a specific disclosure form, but includes all modifications, equivalents, and alternatives that fall within the spirit and scope of the present invention.

術語第一、第二及類似者可用來描述各種組件，但該等組件不應受此等術語限制。此等術語僅可用於將一個組件與另一組件區分開之目的，且例如，在脫離本發明之範疇之情況下，一第一組件可稱為第二組件且類似地，第二組件亦可稱為第一組件。The terms first, second, and the like can be used to describe various components, but these components should not be limited by these terms. These terms can only be used for the purpose of distinguishing one component from another component, and for example, in the case of departing from the scope of the present invention, a first component may be referred to as a second component and similarly, the second component may also be Called the first component.

當一組件稱為「連接」或「耦合」至另一組件時，其可直接連接或耦合至另一組件，但應理解，又一組件可存在於該組件與該另一組件之間。相比之下，當一組件稱為「直接連接」或「直接耦合」至另一組件時，應理解，又一組件可不存在於該組件與該另一組件之間。亦應如上文所描述般解釋描述組件之間的關係之其他表達，即，「在···之間」及「恰在···之間」或「相鄰於」及「直接相鄰於」。When a component is referred to as being “connected” or “coupled” to another component, it can be directly connected or coupled to another component, but it should be understood that another component may exist between the component and the other component. In contrast, when a component is referred to as being “directly connected” or “directly coupled” to another component, it should be understood that another component may not exist between the component and the other component. Other expressions describing the relationship between components should also be explained as described above, that is, "between" and "just between" or "adjacent to" and "directly adjacent to ".

本文中所使用之術語僅用於描述特定實施例之目的且並非意欲於限制本發明。除非內文另有明確規定，否則單數形式包含複數形式。在本說明書中，術語「包括」、「包含」、「具有」或類似者用來指定存在本文中所描述之一特徵、一數目、一步驟、一操作、一組件、一元件或其組合，且應理解，其等不預先排除存在或增加一或多個其他特徵、數目、步驟、操作、組件、元件或其組合之概率。The terms used herein are only used for the purpose of describing specific embodiments and are not intended to limit the present invention. Unless the context clearly stipulates otherwise, the singular form includes the plural form. In this specification, the terms "include", "include", "have" or the like are used to designate the existence of a feature, a number, a step, an operation, a component, an element, or a combination thereof described herein. And it should be understood that they do not preclude the existence or increase of the probability of one or more other features, numbers, steps, operations, components, elements, or combinations thereof.

除非另有定義，否則本文中所使用之所有術語(包含技術或科學術語)具有相同於本發明所屬技術人員通常理解之含義之含義。一字典中所定義之一般術語應被解釋為具有在相關技術之內文中一致之含義且將不被解釋為具有一理想或過度正式含義，除非本發明中明確定義。Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meanings as those commonly understood by those skilled in the present invention. A general term defined in a dictionary should be interpreted as having a consistent meaning in the context of the related technology and will not be interpreted as having an ideal or excessive formal meaning unless explicitly defined in the present invention.

在下文中，將參考隨附圖式詳細描述本發明之例示性實施例。Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

圖3係繪示根據本發明之一項實施例之一基板乾燥腔之一圖，圖4係繪示根據本發明之一項實施例之一待初始加壓超臨界流體之一擴散路徑之一圖，圖5係繪示根據本發明之一項實施例之一待乾燥超臨界流體之一擴散路徑之一圖，圖6係繪示根據本發明之一項實施例之溶解有一有機溶劑之一超臨界流體之一排放路徑之一圖，且圖7係用於描述當一乾燥程序終止以及一下殼體及一上殼體敞開時防止顆粒流入至一基板上之原理之一圖，其中顆粒存在於設置於上殼體及下殼體之一耦合表面上之一密封部件上且存在於密封部件周圍。FIG. 3 is a diagram showing a substrate drying chamber according to an embodiment of the present invention, and FIG. 4 is a diagram showing a diffusion path of a supercritical fluid to be initially pressurized according to an embodiment of the present invention Fig. 5 is a diagram showing a diffusion path of a supercritical fluid to be dried according to an embodiment of the present invention, and Fig. 6 is a diagram showing a diffusion path of an organic solvent according to an embodiment of the present invention A diagram of a discharge path of supercritical fluid, and FIG. 7 is a diagram used to describe the principle of preventing particles from flowing into a substrate when a drying process is terminated and a lower shell and an upper shell are opened, where particles exist It is arranged on a sealing component arranged on a coupling surface of the upper casing and the lower casing and exists around the sealing component.

參考圖3至圖7，根據本發明之一項實施例之一基板乾燥腔1包含一上殼體10、一下殼體20、一密封部件30、一基板放置板40、一加熱構件45、一整合式供應/排放埠50、一上供應埠60、一基板放置板支撐件70、一基板支撐件80及一殼體驅動器90。3-7, a substrate drying chamber 1 according to an embodiment of the present invention includes an upper casing 10, a lower casing 20, a sealing component 30, a substrate placement plate 40, a heating member 45, and a Integrated supply/discharge port 50, an upper supply port 60, a substrate placement board support 70, a substrate support 80 and a housing driver 90.

上殼體10及下殼體20可開閉自如地彼此耦合且提供其中執行一乾燥程序之一空間。例如，上殼體10及下殼體20可各經構形以具有一圓柱形狀，但本發明不限於此。如下文所描述，上供應埠60經形成於上殼體10中，且整合式供應/排放埠50經形成於下殼體20中。The upper casing 10 and the lower casing 20 can be freely coupled to each other and provide a space for performing a drying process. For example, the upper housing 10 and the lower housing 20 may each be configured to have a cylindrical shape, but the invention is not limited thereto. As described below, the upper supply port 60 is formed in the upper housing 10 and the integrated supply/discharge port 50 is formed in the lower housing 20.

密封部件30經設置於下殼體20與上殼體10之間的一耦合表面C上且維持下殼體20與上殼體10之間的耦合表面C之氣密性以將基板乾燥腔1之一內部區與外部隔離。The sealing member 30 is disposed on a coupling surface C between the lower casing 20 and the upper casing 10 and maintains the airtightness of the coupling surface C between the lower casing 20 and the upper casing 10 to dry the substrate 1 One of the internal areas is isolated from the outside.

例如，如用於描述防止顆粒流入至一基板W上之原理之圖7中所展示，顆粒存在於設置於上殼體10與下殼體20之間的耦合表面C上之密封部件30上且存在於密封部件30周圍，且當一乾燥程序終止以及下殼體20及上殼體10敞開時，基板W可配置於基板放置板40上以便定位成高於下殼體20與上殼體10之間的耦合表面C，且當乾燥程序終止以及下殼體20及上殼體10敞開時，基板乾燥腔1可經構形以防止顆粒歸因於由於基板W與耦合表面C之間的一高度差之重力而流入至基板W上，其中顆粒存在於設置於耦合表面C上之密封部件30周圍。For example, as shown in FIG. 7 for describing the principle of preventing particles from flowing onto a substrate W, the particles are present on the sealing member 30 provided on the coupling surface C between the upper casing 10 and the lower casing 20 and Exist around the sealing member 30, and when a drying process is terminated and the lower casing 20 and the upper casing 10 are opened, the substrate W can be arranged on the substrate placement plate 40 so as to be positioned higher than the lower casing 20 and the upper casing 10 When the drying process is terminated and the lower housing 20 and the upper housing 10 are opened, the substrate drying chamber 1 can be configured to prevent particles from being attributable to the coupling surface C between the substrate W and the coupling surface C. The gravity of the height difference flows into the substrate W, and the particles exist around the sealing member 30 provided on the coupling surface C.

基板放置板40經耦合至下殼體20之一底表面22且係其上配置基板W(一有機溶劑形成於基板W上)之一組件。下文將描述基板放置板40與其他組件之間的一相互作用。The substrate placement board 40 is coupled to a bottom surface 22 of the lower casing 20 and is a component on which a substrate W (an organic solvent is formed on the substrate W) is disposed. Hereinafter, an interaction between the substrate placement plate 40 and other components will be described.

加熱構件45經安裝於基板放置板40中且在供應待初始加壓超臨界流體及排放混合流體時操作以用來加熱待初始加壓超臨界流體及混合流體。The heating member 45 is installed in the substrate placement plate 40 and operates to heat the supercritical fluid to be initially pressurized and the mixed fluid when the supercritical fluid to be initially pressurized and the mixed fluid are discharged.

例如，加熱構件45可以形成於基板放置板40中之一電阻加熱元件或一充油加熱器之形式實施，但加熱構件45之一實施形式不限於此。For example, the heating member 45 can be implemented in the form of a resistance heating element or an oil-filled heater formed in the substrate placement plate 40, but an implementation form of the heating member 45 is not limited to this.

例如，1)待初始加壓超臨界流體可在一設定初始加壓時間期間透過構成整合式供應/排放埠50之第一管線510及共同埠520供應，2)在已經過初始加壓時間之後，可阻擋待初始加壓超臨界流體之供應且可在一乾燥時間期間透過上供應埠60供應待乾燥超臨界流體，且3)在已經過乾燥時間之後，可阻擋待乾燥超臨界流體且可在一排放時間期間透過構成整合式供應/排放埠50之共同埠520及第二管線530排放混合流體。在此情況下，例如，待乾燥超臨界流體之供應及混合流體之排放可重複預定次數。For example, 1) the supercritical fluid to be initially pressurized can be supplied through the first pipeline 510 and the common port 520 forming the integrated supply/discharge port 50 during a set initial pressurization time, and 2) after the initial pressurization time has passed , Can block the supply of the supercritical fluid to be initially pressurized and can supply the supercritical fluid to be dried through the upper supply port 60 during a drying time, and 3) after the drying time has passed, can block the supercritical fluid to be dried and can During a discharge time, the mixed fluid is discharged through the common port 520 and the second pipeline 530 constituting the integrated supply/discharge port 50. In this case, for example, the supply of the supercritical fluid to be dried and the discharge of the mixed fluid can be repeated a predetermined number of times.

例如，加熱構件45可在一初始加壓時間期間操作，在該初始加壓時間期間供應待初始加壓超臨界流體以將待初始加壓超臨界流體之一溫度調整變成大於或等於臨界點。For example, the heating member 45 may operate during an initial pressurization time during which the supercritical fluid to be initially pressurized is supplied to adjust the temperature of one of the supercritical fluids to be initially pressurized to be greater than or equal to the critical point.

將如下般描述上述構形及其效應之原因。The reason for the above configuration and its effect will be described as follows.

超臨界流體在一高壓下儲存於設置於根據本發明之一項實施例之基板乾燥腔1外部之超臨界流體產生器中且接著穿過管線及閥使得在超臨界流體經引入至基板乾燥腔1中(初始加壓)時，歸因於閥及管線之一連接部分中之一壓降而發生一冷卻現象。在上述程序期間，超臨界流體可液化或汽化以引起基板W上之顆粒污染使得維持超臨界流體之一溫度大於或等於臨界點係重要的，但先前技術無法為上述問題提供一有效技術措施。特定而言，當增加一加壓速率時，存在至超臨界流體之一充分熱轉移僅因透過一簡化熱交換器維持管線之一溫度而不足之一問題。The supercritical fluid is stored under a high pressure in a supercritical fluid generator provided outside the substrate drying chamber 1 according to an embodiment of the present invention, and then passes through pipelines and valves so that the supercritical fluid is introduced into the substrate drying chamber In 1 (initial pressurization), a cooling phenomenon occurs due to a pressure drop in a connecting part of the valve and the pipeline. During the above procedure, the supercritical fluid can be liquefied or vaporized to cause particle contamination on the substrate W. It is important to maintain a temperature of the supercritical fluid greater than or equal to the critical point, but the prior art cannot provide an effective technical measure for the above problem. In particular, when increasing a pressurization rate, there is a problem that sufficient heat transfer to a supercritical fluid is only insufficient due to maintaining a temperature of a pipeline through a simplified heat exchanger.

本發明之一項實施例透過安裝於基板放置板40中之加熱構件45解決上述問題。即，在初始加壓中，具體而言，當快速進行初始加壓時，待初始加壓超臨界流體在基板乾燥腔1中之一相變透過安裝於該腔中之基板放置板40中之加熱構件4而最小化，使得可防止基板W之顆粒污染，且容易達成超臨界流體之形成或維持使得可改良一程序速度。An embodiment of the present invention solves the above-mentioned problem through the heating member 45 installed in the substrate placement plate 40. That is, in the initial pressurization, specifically, when the initial pressurization is performed quickly, one of the phase changes of the supercritical fluid to be initially pressurized in the substrate drying chamber 1 passes through one of the substrate placement plates 40 installed in the chamber. The heating member 4 is minimized, so that particle contamination of the substrate W can be prevented, and the formation or maintenance of the supercritical fluid can be easily achieved so that a process speed can be improved.

此外，例如，加熱構件45在排放時間期間操作，在該排放時間期間排放混合流體以補償根據歸因於在混合流體之排放期間產生之一壓降之絕熱膨脹產生之一溫降，由此將混合流體中所含有之待乾燥超臨界流體之一溫度調整為大於或等於臨界點。In addition, for example, the heating member 45 is operated during the discharge time during which the mixed fluid is discharged to compensate for a temperature drop generated by adiabatic expansion due to a pressure drop generated during the discharge of the mixed fluid, thereby reducing The temperature of one of the supercritical fluids to be dried contained in the mixed fluid is adjusted to be greater than or equal to the critical point.

將如下般描述上述構形及其效應之原因。The reason for the above configuration and its effect will be described as follows.

當其中一有機溶劑(諸如IPA)溶解於待乾燥超臨界流體中之混合流體自基板乾燥腔1排放(減壓)且歸因於一冷卻效應而經歷相分離時，可歸因於基板W之顆粒污染或混合流體之表面張力而發生形成於基板W上之一圖案之塌陷。具體而言，當一溫度及一壓力歸因於大於或等於一臨界點之一高壓區中之快速絕熱膨脹而下降至臨界點以下時，處於單相之混合流體經歷相分離以引起基板W上之一乾燥缺陷(諸如顆粒污染或類似者)，使得存在亦可引起基板W之圖案塌陷之一問題。When a mixed fluid in which an organic solvent (such as IPA) is dissolved in the supercritical fluid to be dried is discharged (decompressed) from the substrate drying chamber 1 and undergoes phase separation due to a cooling effect, it can be attributed to the substrate W Particle contamination or the surface tension of the mixed fluid causes the collapse of a pattern formed on the substrate W. Specifically, when a temperature and a pressure drop below the critical point due to rapid adiabatic expansion in a high pressure region greater than or equal to a critical point, the mixed fluid in a single phase undergoes phase separation to cause the substrate W A drying defect (such as particle contamination or the like) causes a problem that can also cause the pattern of the substrate W to collapse.

本發明之一項實施例透過安裝於基板放置板40中之加熱構件45解決上述問題。即，考量排放混合流體期間之相變而判定一減壓速率，且考量一冷卻效應而使用加熱構件45來傳遞足夠熱來進行一減壓排放使得可防止一乾燥缺陷且可改良一程序速度。An embodiment of the present invention solves the above-mentioned problem through the heating member 45 installed in the substrate placement plate 40. That is, considering the phase change during the discharge of the mixed fluid to determine a decompression rate, and considering a cooling effect, the heating member 45 is used to transfer enough heat to perform a decompression discharge so that a drying defect can be prevented and a process speed can be improved.

同時，例如，透過構成整合式供應/排放埠50之一第一管線510及一共同埠520供應之一待初始加壓超臨界流體可由基板放置板40阻擋以防止直接注入至基板W上。At the same time, for example, a first line 510 and a common port 520 that form an integrated supply/discharge port 50 supplies a supercritical fluid to be initially pressurized by the substrate placement plate 40 to prevent direct injection onto the substrate W.

更具體而言，如繪示待初始加壓超臨界流體之一擴散路徑之圖4及繪示溶解有有機溶劑之一超臨界流體之一排放路徑之圖6中所展示，可藉由以下步驟減少一乾燥程序時間使得可防止形成於基板W上之一圖案塌陷：使用配置基板W(其係乾燥程序之一目標)必不可少之基板放置板40阻擋在乾燥程序終止之後敞開基板乾燥腔1時再引入之顆粒及由此阻擋待初始加壓超臨界流體之一流在乾燥程序之一初始階段直接朝向基板W之一表面；防止待初始加壓超臨界流體中可含有之顆粒經沈積於基板W上之一問題；及減少顆粒之一沈積量；及歸因於基板放置板40所佔據之一體積而減少基板乾燥腔1之一工作體積。More specifically, as shown in Fig. 4 showing a diffusion path of the supercritical fluid to be initially pressurized and Fig. 6 showing a discharge path of a supercritical fluid dissolved in an organic solvent, the following steps can be performed Reducing the time of a drying process makes it possible to prevent a pattern formed on the substrate W from collapsing: Use the substrate placement plate 40 that is essential for configuring the substrate W (which is one of the targets of the drying process) to block the opening of the substrate drying chamber 1 after the drying process is terminated. The particles introduced at the time and thereby block the flow of the supercritical fluid to be initially pressurized are directly directed toward a surface of the substrate W at the initial stage of the drying process; prevent the particles that may be contained in the supercritical fluid to be initially pressurized from being deposited on the substrate One of the above problems; and reducing the deposition amount of particles; and reducing the working volume of the substrate drying chamber 1 due to a volume occupied by the substrate placement plate 40.

整合式供應/排放埠50經形成以自下殼體20之一個側表面24延伸至另一側表面26且經形成為自一個側表面24及另一側表面26之一中間區28朝向基板放置板40。整合式供應/排放埠50係用於提供待初始加壓超臨界流體之一供應路徑及在乾燥之後溶解有形成於基板W上之有機溶劑之超臨界流體之一排放路徑之一組件。The integrated supply/discharge port 50 is formed to extend from one side surface 24 to the other side surface 26 of the lower housing 20 and is formed to be placed toward the substrate from an intermediate region 28 of one side surface 24 and the other side surface 26板40. The integrated supply/discharge port 50 is a component used to provide a supply path of the supercritical fluid to be initially pressurized and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate W is dissolved after drying.

透過一個整合式供應/排放埠50提供待初始加壓超臨界流體之供應路徑及溶解有在乾燥之後形成於基板W上之有機溶劑之超臨界流體之排放路徑，使得存在以下效應：藉由在供應及排放超臨界流體時引發一對稱流以在基板乾燥腔1中均勻地分佈及供應超臨界流體且自基板乾燥腔1排放超臨界流體來增加基板乾燥效率。The supply path of the supercritical fluid to be initially pressurized and the discharge path of the supercritical fluid dissolved in the organic solvent formed on the substrate W after drying are provided through an integrated supply/discharge port 50, so that the following effects exist: When the supercritical fluid is supplied and discharged, a symmetrical flow is induced to uniformly distribute and supply the supercritical fluid in the substrate drying chamber 1 and discharge the supercritical fluid from the substrate drying chamber 1 to increase the substrate drying efficiency.

例如，整合式供應/排放埠50包含：第一管線510，其自下殼體20之一個側表面24形成至其中間區28；共同埠520，其經形成以在中間區28中與第一管線510連通且指向基板放置板40；及一第二管線530，其經構形以在中間區28中與共同埠520及第一管線510連通且經形成為朝向下殼體20之另一側表面26。第一管線510及共同埠520可經構形以提供待初始加壓超臨界流體之供應路徑，且共同埠520及第二管線530可經構形以提供溶解有有機溶劑之超臨界流體之排放路徑。For example, the integrated supply/discharge port 50 includes: a first pipeline 510, which is formed from a side surface 24 of the lower housing 20 to a middle region 28; a common port 520, which is formed to communicate with the first line in the middle region 28 The pipeline 510 communicates and points to the substrate placement plate 40; and a second pipeline 530, which is configured to communicate with the common port 520 and the first pipeline 510 in the intermediate region 28 and is formed to face the other side of the lower housing 20 Surface 26. The first pipeline 510 and the common port 520 may be configured to provide a supply path for the supercritical fluid to be initially pressurized, and the common port 520 and the second pipeline 530 may be configured to provide discharge of the supercritical fluid dissolved in organic solvent path.

上供應埠60係形成為在上殼體10之一中央區中指向基板放置板40以提供待乾燥超臨界流體之供應路徑之一組件。The upper supply port 60 is formed as a component directed to the substrate placement plate 40 in a central area of the upper casing 10 to provide a supply path for the supercritical fluid to be dried.

基板放置板支撐件70係其之一端經耦合至下殼體20之底表面22及其另一端經耦合至基板放置板40且在支撐基板放置板40時將基板放置板40與下殼體20之底表面22分離之一組件。The substrate placement board support 70 has one end coupled to the bottom surface 22 of the lower housing 20 and the other end thereof is coupled to the substrate placement board 40 and connects the substrate placement board 40 and the lower housing 20 when the substrate placement board 40 is supported. The bottom surface 22 is separated from one component.

例如，歸因於基板放置板支撐件70而存在於下殼體20之底表面22與基板放置板40之間的一第一分離空間R1可執行以下功能：藉由允許透過整合式供應/排放埠50供應之待初始加壓超臨界流體沿基板放置板40之一底表面移動來引發待初始加壓超臨界流體逐漸擴散至其中配置基板W之一處理區域中。For example, a first separation space R1 existing between the bottom surface 22 of the lower housing 20 and the substrate placement plate 40 due to the substrate placement plate support 70 may perform the following function: by allowing the integrated supply/discharge The supercritical fluid to be initially pressurized supplied by the port 50 moves along a bottom surface of the substrate placement plate 40 to cause the supercritical fluid to be initially pressurized to gradually diffuse into a processing area in which the substrate W is disposed.

基板支撐件80係其之一端經耦合至基板放置板40之一頂表面及其另一端經耦合至基板W且在支撐基板W時將基板W與基板放置板40之頂表面分離之一組件。The substrate support 80 is a component whose one end is coupled to a top surface of the substrate placement board 40 and the other end is coupled to the substrate W and separates the substrate W from the top surface of the substrate placement board 40 when supporting the substrate W.

例如，歸因於基板支撐件80而存在於基板放置板40之頂表面與基板W之間的一第二分離空間R2執行以下功能：藉由將基板W之一底表面暴露於透過整合式供應/排放埠50供應之待初始加壓超臨界流體及透過上供應埠60供應之待乾燥超臨界流體來減少乾燥程序之一時間。For example, a second separation space R2 existing between the top surface of the substrate placement plate 40 and the substrate W due to the substrate support 80 performs the following function: by exposing one of the bottom surfaces of the substrate W to the integrated supply /The supercritical fluid to be initially pressurized supplied by the discharge port 50 and the supercritical fluid to be dried supplied through the upper supply port 60 to reduce the time of the drying process.

殼體驅動器90係用於敞開或閉合上殼體10及下殼體20之一部件。在乾燥程序終止之後，驅使下殼體20與上殼體10分離以敞開基板乾燥腔1，或當乾燥程序開始時，殼體驅動器90可執行以下功能：驅動下殼體20且將下殼體20耦合至上殼體10以閉合基板乾燥腔1。儘管殼體驅動器90已在圖式中被繪示為驅動下殼體20，但此僅僅係一項實例，且殼體驅動器90可經構形以驅動上殼體10。The housing driver 90 is used to open or close one of the upper housing 10 and the lower housing 20. After the drying process is terminated, the lower housing 20 is driven to separate from the upper housing 10 to open the substrate drying chamber 1, or when the drying process starts, the housing driver 90 may perform the following functions: drive the lower housing 20 and remove the lower housing 20 is coupled to the upper housing 10 to close the substrate drying chamber 1. Although the housing driver 90 has been shown as driving the lower housing 20 in the drawing, this is only an example, and the housing driver 90 may be configured to drive the upper housing 10.

例如，待初始加壓超臨界流體及待乾燥超臨界流體可包含二氧化碳(CO2 )，且有機溶劑可包含醇，但本發明不限於此。作為一特定實例，該醇可包含甲醇、乙醇、1-丙醇、2-丙醇(異丙醇(IPA))及1-丁醇，但本發明不限於此。For example, the supercritical fluid to be initially pressurized and the supercritical fluid to be dried may include carbon dioxide (CO 2 ), and the organic solvent may include alcohol, but the present invention is not limited thereto. As a specific example, the alcohol may include methanol, ethanol, 1-propanol, 2-propanol (isopropanol (IPA)), and 1-butanol, but the present invention is not limited thereto.

例如，根據在根據本發明之一項實施例之基板乾燥腔1中執行之超臨界乾燥技術，將處於一超臨界狀態之CO2 供應至基板W，基板W之一表面在基板乾燥腔1中被有機溶劑(諸如醇或類似者)潤濕使得基板W上之醇溶解於一超臨界CO2 流體中。接著，自基板乾燥腔1逐漸排放溶解有醇之超臨界CO2 流體使得可乾燥基板W而無一圖案塌陷。For example, according to the supercritical drying technology performed in the substrate drying chamber 1 according to an embodiment of the present invention, CO 2 in a supercritical state is supplied to the substrate W, and one surface of the substrate W is in the substrate drying chamber 1 Wetting by an organic solvent (such as alcohol or the like) dissolves the alcohol on the substrate W in a supercritical CO 2 fluid. Then, the alcohol-dissolved supercritical CO 2 fluid is gradually discharged from the substrate drying chamber 1 so that the substrate W can be dried without a pattern collapse.

1:基板乾燥腔 10:上殼體 20:下殼體 22:底表面 24:側表面 26:側表面 28:中間區 30:密封部件 40:基板放置板 45:加熱構件 50:整合式供應/排放埠 60:上供應埠 70:基板放置板支撐件 80:基板支撐件 90:殼體驅動器 410:高壓腔 420:下主體 422:下供應埠 426:排放埠 430:上主體 510:第一管線 520:共同埠 530：第二管線 C:耦合表面 R1:第一分離空間 R2:第二分離空間 W:基板1: Substrate drying chamber 10: Upper shell 20: Lower shell 22: bottom surface 24: side surface 26: side surface 28: Middle area 30: Sealing parts 40: substrate placement board 45: heating element 50: Integrated supply/drain port 60: Upper supply port 70: substrate placement board support 80: substrate support 90: housing drive 410: high pressure chamber 420: lower body 422: Down Supply Port 426: Drain Port 430: upper body 510: The first pipeline 520: Common Port 530: The second pipeline C: Coupling surface R1: The first separation space R2: Second separation space W: substrate

圖1係繪示根據先前技術之在一基板乾燥程序期間發生之一圖案塌陷現象之一圖；FIG. 1 is a diagram showing a pattern collapse phenomenon that occurs during a substrate drying process according to the prior art;

圖2係繪示一習知基板乾燥腔之一圖；Figure 2 shows a diagram of a conventional substrate drying chamber;

圖3係繪示本發明之一項實施例之一基板乾燥腔之一圖；FIG. 3 is a diagram showing a substrate drying chamber according to an embodiment of the present invention;

圖4係繪示本發明之一項實施例之一待初始加壓超臨界流體之一擴散路徑之一圖；4 is a diagram showing a diffusion path of a supercritical fluid to be initially pressurized according to an embodiment of the present invention;

圖5係繪示本發明之一項實施例之一待乾燥超臨界流體之一擴散路徑之一圖；Fig. 5 is a diagram showing a diffusion path of a supercritical fluid to be dried in an embodiment of the present invention;

圖6係繪示根據本發明之一項實施例之溶解有一有機溶劑之一超臨界流體之一排放路徑之一圖；及6 is a diagram showing a discharge path of a supercritical fluid with an organic solvent dissolved in an organic solvent according to an embodiment of the present invention; and

圖7係用於描述當一乾燥程序終止以及一下殼體及一上殼體敞開時防止顆粒流入至一基板上之原理之一圖，其中顆粒存在於設置於上殼體及下殼體之一耦合表面上之一密封部件上且存在於密封部件周圍。Figure 7 is a diagram used to describe the principle of preventing particles from flowing into a substrate when a drying process is terminated and a lower shell and an upper shell are opened, wherein the particles exist in one of the upper shell and the lower shell One of the sealing parts on the coupling surface is present on and around the sealing part.

1:基板乾燥腔 1: Substrate drying chamber

10:上殼體 10: Upper shell

20:下殼體 20: Lower shell

22:底表面 22: bottom surface

24:側表面 24: side surface

26:側表面 26: side surface

28:中間區 28: Middle area

30:密封部件 30: Sealing parts

40:基板放置板 40: substrate placement board

45:加熱構件 45: heating element

50:整合式供應/排放埠 50: Integrated supply/drain port

60:上供應埠 60: Upper supply port

70:基板放置板支撐件 70: substrate placement board support

80:基板支撐件 80: substrate support

90:殼體驅動器 90: housing drive

510:第一管線 510: The first pipeline

520:共同埠 520: Common Port

530:第二管線 530: second pipeline

C:耦合表面 C: Coupling surface

R1:第一分離空間 R1: The first separation space

R2:第二分離空間 R2: Second separation space

W:基板 W: substrate

Claims (12)

一種基板乾燥腔，其包括： 一上殼體； 一下殼體，其可開放自如地耦合至該上殼體； 一密封部件，其經設置於該下殼體及該上殼體之一耦合表面上； 一基板放置板，其經耦合至該下殼體之一底表面且其上配置形成有一有機溶劑之一基板； 一上供應埠，其經形成為在該上殼體之一中央區中指向該基板放置板且經構形以提供一待乾燥超臨界流體之一供應路徑； 一整合式供應/排放埠，其經構形以根據該待乾燥超臨界流體之一供應提供一待初始加壓超臨界流體之一供應路徑及在乾燥之後其中該有機溶劑溶解於該待乾燥超臨界流體中之一混合流體之一排放路徑；及 一加熱構件，其經安裝於該基板放置板中且經構形以在供應該待初始加壓超臨界流體及排放該混合流體時操作以加熱該待初始加壓超臨界流體及該混合流體。A substrate drying chamber includes: An upper shell A lower shell, which can be freely coupled to the upper shell; A sealing component arranged on a coupling surface of the lower shell and the upper shell; A substrate placement board, which is coupled to a bottom surface of the lower casing and a substrate with an organic solvent formed thereon; An upper supply port formed to point to the substrate placement plate in a central area of the upper casing and configured to provide a supply path for the supercritical fluid to be dried; An integrated supply/discharge port, which is configured to provide a supply path of a supercritical fluid to be initially pressurized according to a supply of the supercritical fluid to be dried and in which the organic solvent is dissolved in the supercritical fluid to be dried after drying A discharge path of a mixed fluid in the critical fluid; and A heating member installed in the substrate placement plate and configured to operate when supplying the initial pressurized supercritical fluid and discharging the mixed fluid to heat the initial pressurized supercritical fluid and the mixed fluid. 如請求項1之基板乾燥腔，其中該加熱構件在一初始加壓時間期間操作，在該初始加壓時間期間供應該待初始加壓超臨界流體以將該待初始加壓超臨界流體之一溫度調整為大於或等於一臨界點。The substrate drying chamber of claim 1, wherein the heating member is operated during an initial pressurization time, and during the initial pressurization time, the supercritical fluid to be initially pressurized is supplied to one of the supercritical fluids to be initially pressurized The temperature is adjusted to be greater than or equal to a critical point. 如請求項1之基板乾燥腔，其中該加熱構件在一排放時間期間操作，在該排放時間期間排放該混合流體以補償根據歸因於在該混合流體之該排放期間產生之一壓降之絕熱膨脹產生之一溫降，由此將該混合流體中所含有之該待乾燥超臨界流體之一溫度調整為大於或等於一臨界點。The substrate drying chamber of claim 1, wherein the heating member is operated during a discharge time during which the mixed fluid is discharged to compensate for the insulation due to a pressure drop generated during the discharge of the mixed fluid Thermal expansion produces a temperature drop, thereby adjusting the temperature of a supercritical fluid to be dried contained in the mixed fluid to be greater than or equal to a critical point. 如請求項1之基板乾燥腔，其中該整合式供應/排放埠經形成以自該下殼體之一個側表面延伸至另一側表面且經形成為在該一個側表面及該另一側表面之一中間區中指向該基板放置板。The substrate drying chamber of claim 1, wherein the integrated supply/discharge port is formed to extend from one side surface to the other side surface of the lower housing and is formed on the one side surface and the other side surface One of the intermediate areas points to the substrate to place the board. 如請求項4之基板乾燥腔，其中該整合式供應/排放埠包含 一第一管線，其自該下殼體之該一個側表面形成至該中間區； 一共同埠，其經構形以在該中間區中與該第一管線連通且經形成為指向該基板放置板；及 一第二管線，其經構形以在該中間區中與該共同埠及該第一管線連通且經形成為朝向該下殼體之該另一側表面。Such as the substrate drying chamber of claim 4, wherein the integrated supply/discharge port includes A first pipeline formed from the one side surface of the lower casing to the intermediate zone; A common port configured to communicate with the first pipeline in the intermediate zone and formed to point to the substrate placement plate; and A second pipeline is configured to communicate with the common port and the first pipeline in the intermediate zone and is formed to face the other side surface of the lower housing. 如請求項5之基板乾燥腔，其中： 該第一管線及該共同埠提供該待初始加壓超臨界流體之該供應路徑；且 該共同埠及該第二管線提供溶解有該有機溶劑之該超臨界流體之該排放路徑。Such as the substrate drying chamber of claim 5, where: The first pipeline and the common port provide the supply path of the supercritical fluid to be initially pressurized; and The common port and the second pipeline provide the discharge path of the supercritical fluid dissolved in the organic solvent. 如請求項1之基板乾燥腔，其中該基板經配置於該基板放置板上以定位成高於該下殼體及該上殼體之該耦合表面，且當該乾燥程序終止以及該下殼體及該上殼體敞開時，防止設置於該耦合表面上之該密封部件周圍之顆粒歸因於根據該基板與該耦合表面之間的一高度差之重力而引入至該基板上。Such as the substrate drying chamber of claim 1, wherein the substrate is arranged on the substrate placement plate to be positioned higher than the coupling surface of the lower casing and the upper casing, and when the drying process is terminated and the lower casing And when the upper casing is opened, preventing particles around the sealing member disposed on the coupling surface from being introduced onto the substrate due to gravity based on a height difference between the substrate and the coupling surface. 如請求項7之基板乾燥腔，其中由該基板放置板阻擋透過一第一管線及一共同埠供應之該待初始加壓超臨界流體使得防止該待初始加壓超臨界流體直接注入至該基板上。Such as the substrate drying chamber of claim 7, wherein the substrate placement plate blocks the supercritical fluid to be initially pressurized supplied through a first pipeline and a common port so as to prevent the supercritical fluid to be initially pressurized from being directly injected into the substrate on. 如請求項1之基板乾燥腔，其中一基板放置板支撐件具有耦合至該下殼體之該底表面之一端及耦合至該基板放置板之另一端且經構形以在支撐該基板放置板時將該基板放置板與該下殼體之該底表面分離。Such as the substrate drying chamber of claim 1, wherein a substrate placement board support has one end coupled to the bottom surface of the lower housing and the other end coupled to the substrate placement board and is configured to support the substrate placement board The substrate placement plate is separated from the bottom surface of the lower casing. 如請求項9之基板乾燥腔，其中歸因於該基板放置板支撐件而存在於該下殼體之該底表面與該基板放置板之間的一第一分離空間引發透過該整合式供應/排放埠供應之該待初始加壓超臨界流體沿該基板放置板之一底表面移動以逐漸擴散至其中配置該基板之一處理區域中。Such as the substrate drying chamber of claim 9, wherein a first separation space existing between the bottom surface of the lower housing and the substrate placement plate due to the substrate placement plate support is caused by the integrated supply/ The initially pressurized supercritical fluid supplied from the discharge port moves along a bottom surface of the substrate placement plate to gradually diffuse into a processing area where the substrate is disposed. 如請求項1之基板乾燥腔，其中一基板支撐件具有耦合至該基板放置板之一頂表面之一端及耦合至該基板之另一端且經構形以在支撐該基板時將該基板與該基板放置板之該頂表面分離。Such as the substrate drying chamber of claim 1, wherein one of the substrate supports has one end coupled to a top surface of the substrate placement plate and the other end coupled to the substrate and is configured to support the substrate and the substrate The top surface of the substrate placement board is separated. 如請求項11之基板乾燥腔，其中歸因於該基板支撐件而存在於該基板放置板之該頂表面與該基板之間的一第二分離空間將該基板之一底表面暴露於透過該整合式供應/排放埠供應之該待初始加壓超臨界流體及透過該上供應埠供應之該待乾燥超臨界流體，由此減少該乾燥程序之一時間。For example, the substrate drying chamber of claim 11, wherein a second separation space existing between the top surface of the substrate placement plate and the substrate due to the substrate support element exposes a bottom surface of the substrate through the The supercritical fluid to be initially pressurized supplied by the integrated supply/discharge port and the supercritical fluid to be dried supplied through the upper supply port, thereby reducing the time of the drying process.
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