TW202039901A - Sputtering device - Google Patents

Sputtering device Download PDF

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TW202039901A
TW202039901A TW109113930A TW109113930A TW202039901A TW 202039901 A TW202039901 A TW 202039901A TW 109113930 A TW109113930 A TW 109113930A TW 109113930 A TW109113930 A TW 109113930A TW 202039901 A TW202039901 A TW 202039901A
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gas
forming chamber
targets
film forming
antenna
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TW109113930A
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TWI742632B (en
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久保田清
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日商日新電機股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention equalizes the pressure of a gas supplied to a target in a film forming chamber, and improves the uniformity of a thin film formed on a substrate. In this sputtering device (1) even for either of two adjacent targets (30) among a plurality of targets (30), antennas (20) are disposed in a predetermined first positional relationship in a first space (S1) formed between the two targets (30), and the antennas (20) are disposed in a predetermined second positional relationship to a gas introduction port (41) and gas discharge port (51) which are disposed inside the first space (S1).

Description

濺鍍裝置Sputtering device

本發明是有關於一種濺鍍裝置。The present invention relates to a sputtering device.

作為現有技術，已知有以如下方式構成的濺鍍裝置：於靶的表面形成磁場來生成電漿，使電漿中的離子衝撞靶，藉此濺鍍粒子自靶飛出。作為此種濺鍍裝置，例如可列舉專利文獻1中所揭示的濺鍍裝置。As a prior art, there is known a sputtering apparatus constructed in which a magnetic field is formed on the surface of a target to generate plasma, and ions in the plasma collide with the target, whereby sputtered particles fly out of the target. As such a sputtering device, for example, the sputtering device disclosed in Patent Document 1 can be cited.

專利文獻1中所揭示的濺鍍裝置具有將鄰接的兩塊靶設為一組，對一組靶間施加電壓的靶裝置。靶裝置具有與一組靶的側面相向配置的隔離壁，於隔離壁與靶之間形成氣體導入口，於真空槽的底面形成主排氣口。自氣體導入口導入的反應氣體穿過一組的靶間後自主排氣口排出。 [現有技術文獻] [專利文獻]The sputtering device disclosed in Patent Document 1 has a target device that sets two adjacent targets as a set and applies a voltage between the set of targets. The target device has a partition wall arranged opposite to the side surface of a set of targets, a gas inlet is formed between the partition wall and the target, and a main exhaust port is formed on the bottom surface of the vacuum tank. The reaction gas introduced from the gas inlet passes through a set of target chambers and is discharged from the autonomous exhaust port. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本公開專利公報「日本專利特開2013-49884號公報（2013年3月14日公開）」[Patent Document 1] Japanese Patent Publication "Japanese Patent Laid-Open No. 2013-49884 (published on March 14, 2013)"

[發明所欲解決之課題] 於專利文獻1中所揭示的濺鍍裝置中，於隔離壁與靶之間形成有氣體導入口，但於一組靶間未形成氣體導入口。另外，於一組靶間形成有主排氣口，但於隔離壁與靶之間未形成主排氣口。[The problem to be solved by the invention] In the sputtering apparatus disclosed in Patent Document 1, a gas inlet is formed between the partition wall and the target, but no gas inlet is formed between a set of targets. In addition, a main exhaust port is formed between a set of targets, but a main exhaust port is not formed between the partition wall and the target.

因此，於專利文獻1中所揭示的濺鍍裝置中，存在如下的問題：於真空槽內無法充分地使對靶供給的氣體的壓力變得均勻，無法充分地使形成於基板的薄膜變得均勻。本發明的一形態的目的是於成膜室內使對靶供給的氣體的壓力變得均勻，提昇形成於基板的薄膜的均勻性。 [解決課題之手段]Therefore, in the sputtering apparatus disclosed in Patent Document 1, there is a problem that the pressure of the gas supplied to the target cannot be sufficiently uniformized in the vacuum chamber, and the thin film formed on the substrate cannot be sufficiently changed. Evenly. An object of one aspect of the present invention is to make the pressure of the gas supplied to the target uniform in the film forming chamber and to improve the uniformity of the thin film formed on the substrate. [Means to solve the problem]

為了解決所述問題，本發明的一形態的濺鍍裝置包括：真空容器，於內部形成有收容基板的成膜室；多個天線，以與所述基板相向的方式設置，產生電漿；以及多個靶，相對於所述多個天線設置在與所述基板側相反的一側，是濺鍍的對象；於所述成膜室，形成用於朝所述成膜室內導入氣體的多個氣體導入口、及用於排出所述成膜室內的氣體的多個氣體排氣口，於所述多個靶之中鄰接的兩塊靶的任一者中，均相對於形成於所述兩塊靶之間的第一空間，以規定的第一位置關係配置所述天線，並且相對於配置於所述第一空間內的所述氣體導入口及所述氣體排氣口，以規定的第二位置關係配置所述天線。 [發明的效果]In order to solve the above-mentioned problems, a sputtering apparatus according to an aspect of the present invention includes: a vacuum vessel in which a film forming chamber for accommodating a substrate is formed; a plurality of antennas are arranged to face the substrate to generate plasma; and A plurality of targets are provided on the side opposite to the substrate side with respect to the plurality of antennas, and are objects of sputtering; in the film forming chamber, a plurality of targets for introducing gas into the film forming chamber are formed The gas inlet and the plurality of gas exhaust ports for discharging the gas in the film forming chamber, in any one of the two adjacent targets among the plurality of targets, are opposite to those formed in the two In the first space between the blocks, the antenna is arranged in a predetermined first positional relationship, and the gas inlet and the gas exhaust port arranged in the first space are arranged in a predetermined first position. The antenna is configured in a positional relationship. [Effects of the invention]

根據本發明的一形態，可於成膜室內使對靶供給的氣體的壓力變得均勻，可提昇形成於基板的薄膜的均勻性。According to one aspect of the present invention, the pressure of the gas supplied to the target can be made uniform in the film forming chamber, and the uniformity of the thin film formed on the substrate can be improved.

[實施方式1] ＜濺鍍裝置1的構成＞ 圖1是表示本發明的實施方式1的濺鍍裝置1的構成的剖面圖。圖2是圖1中所示的濺鍍裝置1的內部的平面圖。具體而言，圖2是於圖1中從自基板W朝向天線20的方向觀察時的濺鍍裝置1的內部的平面圖。另外，於圖2中，省略基板保持部70及真空排氣裝置81、真空排氣裝置91。進而，於圖1～圖5中，針對於圖上可同樣看待的形狀的構件，省略構件編號。[Embodiment 1] <Configuration of Sputtering Device 1> FIG. 1 is a cross-sectional view showing the structure of a sputtering apparatus 1 according to Embodiment 1 of the present invention. FIG. 2 is a plan view of the inside of the sputtering apparatus 1 shown in FIG. 1. Specifically, FIG. 2 is a plan view of the inside of the sputtering device 1 when viewed from the direction from the substrate W toward the antenna 20 in FIG. 1. In addition, in FIG. 2, the substrate holding portion 70, the vacuum exhaust device 81, and the vacuum exhaust device 91 are omitted. Furthermore, in FIGS. 1 to 5, the member numbers are omitted for members having shapes that can be viewed in the same manner on the drawings.

如圖1所示，濺鍍裝置1包括：真空容器10、多個天線20、多個靶30、多個靶保持部31、多個氣體導入管40、排氣板50、多個絕緣部60、基板保持部70、以及真空排氣裝置81、真空排氣裝置91。As shown in FIG. 1, the sputtering apparatus 1 includes: a vacuum vessel 10, a plurality of antennas 20, a plurality of targets 30, a plurality of target holding parts 31, a plurality of gas introduction pipes 40, an exhaust plate 50, and a plurality of insulating parts 60 , The substrate holding portion 70, the vacuum exhaust device 81, and the vacuum exhaust device 91.

濺鍍裝置1是使用感應耦合型的電漿對靶30進行濺鍍來於基板W進行成膜的裝置。此處，基板W例如為液晶顯示器或有機電致發光（Electroluminescence，EL）顯示器等平板顯示器用的玻璃基板、可撓性顯示器用的可撓性基板等。The sputtering apparatus 1 is an apparatus that sputters the target 30 using inductively coupled plasma to form a film on the substrate W. Here, the substrate W is, for example, a glass substrate for flat panel displays such as a liquid crystal display or an organic electroluminescence (EL) display, a flexible substrate for flexible displays, and the like.

真空容器10是進行真空排氣、且內部被供給氣體的容器。另外，真空容器10是於內部形成有收容基板W的成膜室11的容器。成膜室11藉由由真空容器10的側壁12、真空容器10的底面13、基板保持部70、多個靶30、以及多個氣體導入管40包圍來形成。於成膜室11形成多個氣體導入口41與多個氣體排氣口51。關於氣體導入口41及氣體排氣口51，其後進行敍述。The vacuum container 10 is a container to which a vacuum is performed and gas is supplied inside. In addition, the vacuum container 10 is a container in which a film formation chamber 11 accommodating a substrate W is formed. The film forming chamber 11 is formed by being surrounded by the side wall 12 of the vacuum container 10, the bottom surface 13 of the vacuum container 10, the substrate holding portion 70, the plurality of targets 30, and the plurality of gas introduction pipes 40. A plurality of gas introduction ports 41 and a plurality of gas exhaust ports 51 are formed in the film forming chamber 11. The gas introduction port 41 and the gas exhaust port 51 will be described later.

多個天線20分別是以與基板W相向的方式設置於成膜室11內，產生電漿的感應耦合電漿（Inductively Coupled Plasma，ICP）天線。具體而言，多個天線20於成膜室11內的基板W的表面側，以沿著基板W的表面的方式並列地配置於同一平面上。例如，多個天線20實質上與基板W的表面平行地配置。Each of the plurality of antennas 20 is an inductively coupled plasma (ICP) antenna that is provided in the film forming chamber 11 so as to face the substrate W and generates plasma. Specifically, the plurality of antennas 20 are arranged in parallel on the same plane on the surface side of the substrate W in the film forming chamber 11 so as to follow the surface of the substrate W. For example, the plurality of antennas 20 are arranged substantially parallel to the surface of the substrate W.

各天線20中的位於真空容器10內的部分由直管狀的絕緣罩21覆蓋。再者，如圖2所示，各天線20於平視中為直線狀且為相同的構成。此處，所謂平視，意指從自基板W朝向天線20的方向觀察的情況。The portion of each antenna 20 located in the vacuum container 10 is covered by a straight tube-shaped insulating cover 21. Furthermore, as shown in FIG. 2, the antennas 20 are linear and have the same configuration in a horizontal view. Here, the term “horizontal view” refers to the state viewed from the direction from the substrate W toward the antenna 20.

多個靶30分別相對於多個天線20設置在與基板W側相反的一側，是濺鍍的對象。各靶30是於平視中形成矩形狀的平板狀的靶，例如為InGaZnO等氧化物半導體材料。各靶保持部31以與由基板保持部70所保持的基板W相向的方式保持靶30。靶保持部31在與和基板W相向之側相反的一側，經由具有真空密封功能的絕緣部60而設置於排氣板50。The plurality of targets 30 are respectively provided on the side opposite to the substrate W side with respect to the plurality of antennas 20, and are objects of sputtering. Each target 30 is a flat plate-shaped target formed in a rectangular shape in a plan view, and is, for example, an oxide semiconductor material such as InGaZnO. Each target holding portion 31 holds the target 30 so as to face the substrate W held by the substrate holding portion 70. The target holding portion 31 is provided on the exhaust plate 50 via the insulating portion 60 having a vacuum sealing function on the side opposite to the side facing the substrate W.

如圖2所示，多個氣體導入管40分別朝與天線20的延伸方向D1相同的方向延伸。各氣體導入管40經由連接配管101而與朝和多個氣體導入管40排列的方向D2相同的方向延伸的中間配管100連接。即，連接配管101將各氣體導入管40與中間配管100連接。多個氣體導入管40的尺寸亦可對應於應導入成膜室11內的氣體的量來適宜決定。As shown in FIG. 2, the plurality of gas introduction pipes 40 respectively extend in the same direction as the extension direction D1 of the antenna 20. Each gas introduction pipe 40 is connected to an intermediate pipe 100 extending in the same direction as the direction D2 in which the plurality of gas introduction pipes 40 are arranged via a connection pipe 101. That is, the connecting pipe 101 connects each gas introduction pipe 40 and the intermediate pipe 100. The size of the plurality of gas introduction pipes 40 may be appropriately determined in accordance with the amount of gas to be introduced into the film forming chamber 11.

關於中間配管100，於方向D2上的中央部分連接有氣體供給機構110。氣體供給機構110將O2 （氧氣）或N2 （氮氣）等反應性氣體與Ar（氬氣）等濺鍍用氣體的混合氣體供給至中間配管100的內部。已被供給至中間配管100的內部的混合氣體穿過連接配管101而被供給至氣體導入管40的內部。已被供給至氣體導入管40的內部的混合氣體自氣體導入口41朝成膜室11內的靶30的基板W側導入。Regarding the intermediate pipe 100, a gas supply mechanism 110 is connected to the center portion in the direction D2. The gas supply mechanism 110 supplies a mixed gas of a reactive gas such as O 2 (oxygen) or N 2 (nitrogen) and a sputtering gas such as Ar (argon) into the interior of the intermediate pipe 100. The mixed gas that has been supplied to the inside of the intermediate pipe 100 passes through the connection pipe 101 and is supplied to the inside of the gas introduction pipe 40. The mixed gas that has been supplied to the inside of the gas introduction pipe 40 is introduced from the gas introduction port 41 toward the substrate W side of the target 30 in the film formation chamber 11.

再者，氣體供給機構110亦可僅將反應性氣體供給至中間配管100的內部。於此情況下，已被供給至中間配管100的內部的反應性氣體穿過連接配管101而被供給至氣體導入管40的內部。已被供給至氣體導入管40的內部的反應性氣體自氣體導入口41朝成膜室11內的靶30的基板W側導入。Furthermore, the gas supply mechanism 110 may supply only the reactive gas to the inside of the intermediate pipe 100. In this case, the reactive gas that has been supplied to the inside of the intermediate pipe 100 passes through the connection pipe 101 and is supplied to the inside of the gas introduction pipe 40. The reactive gas supplied to the inside of the gas introduction pipe 40 is introduced from the gas introduction port 41 toward the substrate W side of the target 30 in the film formation chamber 11.

另外，於氣體供給機構110僅將反應性氣體供給至中間配管100的內部的情況下，亦可於真空容器10的側壁12形成用於將濺鍍用氣體導入成膜室11內的氣體導入口（未圖示）。於此情況下，藉由供給濺鍍用氣體的氣體供給機構（未圖示）來將濺鍍用氣體自該氣體導入口導入成膜室11內。該氣體供給機構與真空容器10連接。In addition, when the gas supply mechanism 110 supplies only reactive gas to the inside of the intermediate pipe 100, a gas introduction port for introducing the sputtering gas into the film forming chamber 11 may be formed on the side wall 12 of the vacuum container 10 (Not shown). In this case, the sputtering gas is introduced into the film forming chamber 11 from the gas introduction port by a gas supply mechanism (not shown) that supplies the sputtering gas. The gas supply mechanism is connected to the vacuum container 10.

多個氣體導入管40分別以於平視中朝與多個靶30的長邊方向平行的方向延伸的方式配置。於各氣體導入管40，形成有用於將氣體導入成膜室11內的多個氣體導入口41。多個氣體導入口41的形狀較佳為圓形，但並不限定於此，例如亦可為三角形或四邊形等。Each of the plurality of gas introduction pipes 40 is arranged to extend in a direction parallel to the longitudinal direction of the plurality of targets 30 in a plan view. A plurality of gas introduction ports 41 for introducing gas into the film forming chamber 11 are formed in each gas introduction pipe 40. The shape of the plurality of gas introduction ports 41 is preferably circular, but is not limited to this, and may be, for example, a triangle or a quadrilateral.

多個氣體導入口41排列的方向與多個天線20的延伸方向相同，多個氣體導入口41沿著天線20來形成。根據所述構成，已被導入成膜室11內的氣體被均勻地供給至天線20。因此，由天線20所生成的電漿於靶30的表面均勻地擴散，因此於成膜室11內，可提昇形成於基板W的薄膜的均勻性。The direction in which the plurality of gas inlets 41 are arranged is the same as the extending direction of the plurality of antennas 20, and the plurality of gas inlets 41 are formed along the antenna 20. According to the above configuration, the gas introduced into the film formation chamber 11 is uniformly supplied to the antenna 20. Therefore, the plasma generated by the antenna 20 is uniformly spread on the surface of the target 30, and therefore the uniformity of the thin film formed on the substrate W in the film forming chamber 11 can be improved.

排氣板50設置於氣體導入管40的與基板W側相反的一側，形成有用於排出成膜室11內的氣體的多個氣體排氣口51。於排氣板50交替地配置有靶30與氣體導入管40。多個氣體排氣口51分別沿著氣體導入管40的延伸方向來形成，並形成於氣體導入管40的兩側。The exhaust plate 50 is provided on the opposite side of the gas introduction pipe 40 from the substrate W side, and a plurality of gas exhaust ports 51 for exhausting the gas in the film formation chamber 11 are formed. The target 30 and the gas introduction pipe 40 are alternately arranged on the exhaust plate 50. The plurality of gas exhaust ports 51 are respectively formed along the extending direction of the gas introduction pipe 40 and are formed on both sides of the gas introduction pipe 40.

如圖2所示，多個氣體排氣口51的總開口面積比多個氣體導入口41的總開口面積大。藉此，可比朝成膜室11內的氣體的導入更優先進行自成膜室11朝外部的氣體的排氣。因此，可確保成膜室11內的壓力與排氣室15內的壓力的差壓，適當地維持成膜室11內的壓力。As shown in FIG. 2, the total opening area of the plurality of gas exhaust ports 51 is larger than the total opening area of the plurality of gas introduction ports 41. Thereby, the gas from the film forming chamber 11 to the outside can be evacuated more preferentially than the introduction of the gas into the film forming chamber 11. Therefore, the pressure difference between the pressure in the film formation chamber 11 and the pressure in the exhaust chamber 15 can be ensured, and the pressure in the film formation chamber 11 can be maintained appropriately.

進而，以經由形成於氣體導入管40與靶30及靶保持部31之間的第二空間S2來排出氣體的方式，將氣體排氣口51形成於第二空間S2內的與和成膜室11連通之側相反的一側。Furthermore, the gas exhaust port 51 is formed in the AND film forming chamber in the second space S2 so as to exhaust gas through the second space S2 formed between the gas introduction pipe 40 and the target 30 and the target holding portion 31 11 The side opposite to the connected side.

根據所述構成，自氣體導入口41導入的氣體經由形成於氣體導入管40與靶30及靶保持部31之間的第二空間S2而排出，因此氣體均勻地遍布成膜室11內。藉此，於成膜室11內，可提昇形成於基板W的薄膜的均勻性。再者，氣體排氣口51亦可形成於真空容器10的側壁12與氣體導入管40之間的空間內的與和成膜室11連通之側相反的一側。According to the above configuration, the gas introduced from the gas introduction port 41 is discharged through the second space S2 formed between the gas introduction tube 40 and the target 30 and the target holding portion 31, so the gas is uniformly distributed in the film formation chamber 11. Thereby, in the film forming chamber 11, the uniformity of the thin film formed on the substrate W can be improved. Furthermore, the gas exhaust port 51 may be formed on the side opposite to the side communicating with the film forming chamber 11 in the space between the side wall 12 of the vacuum container 10 and the gas introduction pipe 40.

此處，於多個靶30之中鄰接的兩塊靶30的任一者中，均相對於形成於兩塊靶30之間的第一空間S1，以規定的第一位置關係配置天線20。另外，相對於配置於第一空間S1內的氣體導入口41及氣體排氣口51，以規定的第二位置關係配置天線20。Here, in any one of the two adjacent targets 30 among the plurality of targets 30, the antenna 20 is arranged in a predetermined first positional relationship with respect to the first space S1 formed between the two targets 30. In addition, the antenna 20 is arranged in a predetermined second positional relationship with respect to the gas introduction port 41 and the gas exhaust port 51 arranged in the first space S1.

根據所述構成，於鄰接的兩塊靶30的任一者中，天線20與靶30、氣體導入口41、及氣體排氣口51的位置關係均固定。因此，可於成膜室11內使對靶30供給的氣體的壓力變得均勻。藉此，可提昇形成於基板W的薄膜的均勻性。According to the above configuration, in any of the two adjacent targets 30, the positional relationship between the antenna 20 and the target 30, the gas introduction port 41, and the gas exhaust port 51 is fixed. Therefore, the pressure of the gas supplied to the target 30 can be made uniform in the film forming chamber 11. Thereby, the uniformity of the thin film formed on the substrate W can be improved.

具體而言，可提昇氣體的利用效率，可提昇形成於基板W的薄膜的膜厚及膜質的均勻性。此處，尤其考慮靶30為InGaZnO等氧化物半導體材料的情況。Specifically, the gas utilization efficiency can be improved, and the film thickness and film quality uniformity of the thin film formed on the substrate W can be improved. Here, it is particularly considered that the target 30 is an oxide semiconductor material such as InGaZnO.

於此情況下，當進行氧分壓的控制時、作為多層結構來變更氧分壓時、或將具有結晶結構的薄膜形成於基板W時，對靶30供給的氣體的壓力變得均勻。藉此，可使形成於基板W的薄膜的比電阻及結晶性變得極其均勻。另外，可針對所有靶30，使方向D2上的反應性氣體的分壓變得均勻。In this case, when the oxygen partial pressure is controlled, when the oxygen partial pressure is changed as a multilayer structure, or when a thin film having a crystalline structure is formed on the substrate W, the pressure of the gas supplied to the target 30 becomes uniform. Thereby, the specific resistance and crystallinity of the thin film formed on the substrate W can be made extremely uniform. In addition, the partial pressure of the reactive gas in the direction D2 can be made uniform for all the targets 30.

進而，所述第一位置關係是天線20與多個靶30之中鄰接的兩塊靶30各者的距離為相同的位置關係，所述第二位置關係是天線20與氣體導入口41及氣體排氣口51相向的位置關係。根據所述構成，可使分別對鄰接的兩塊靶30供給的氣體的壓力變得均勻。Furthermore, the first positional relationship is that the distance between the antenna 20 and the two adjacent targets 30 among the plurality of targets 30 is the same positional relationship, and the second positional relationship is that the antenna 20 and the gas inlet 41 and the gas The positional relationship where the exhaust ports 51 face each other. According to the above configuration, the pressure of the gas supplied to the two adjacent targets 30 can be made uniform.

另外，較佳為所述第二位置關係是氣體導入口41配置於與自基板W朝向天線20的方向平行的方向、且穿過天線20的直線上的位置關係。藉此，可使自氣體導入口41導入的氣體穿過天線20來向靶30供給。In addition, it is preferable that the second positional relationship is a positional relationship in which the gas introduction port 41 is arranged in a direction parallel to the direction from the substrate W toward the antenna 20 and on a straight line passing through the antenna 20. Thereby, the gas introduced from the gas inlet 41 can pass through the antenna 20 and be supplied to the target 30.

基板保持部70是於成膜室11內，以例如為水平狀態的方式保持基板W的固定器。於平視中，於真空容器10的上表面14的中央形成有主排氣口80。主排氣口80是為了將自氣體導入口41導入成膜室11內的氣體朝成膜室11的外部排出而形成。The substrate holding portion 70 is a holder that holds the substrate W in the film formation chamber 11 in a horizontal state, for example. In a plan view, a main exhaust port 80 is formed in the center of the upper surface 14 of the vacuum container 10. The main exhaust port 80 is formed to discharge the gas introduced into the film formation chamber 11 from the gas introduction port 41 to the outside of the film formation chamber 11.

已自多個氣體排氣口51排出的成膜室11內的氣體藉由真空泵等真空排氣裝置81而自主排氣口80朝真空容器10的外部排出。真空排氣裝置81與真空容器10連接。另外，於真空容器10的底面13形成有副排氣口90。副排氣口90是為了於對基板W進行成膜的前後，將成膜室11內的氣體朝成膜室11的外部排出而形成。於對基板W進行成膜的前後，成膜室11內的氣體藉由真空泵等真空排氣裝置91而自副排氣口90朝真空容器10的外部排出。真空排氣裝置91與真空容器10連接。The gas in the film forming chamber 11 that has been exhausted from the plurality of gas exhaust ports 51 is exhausted from the main exhaust port 80 to the outside of the vacuum container 10 by a vacuum exhaust device 81 such as a vacuum pump. The vacuum exhaust device 81 is connected to the vacuum container 10. In addition, a sub-exhaust port 90 is formed on the bottom surface 13 of the vacuum container 10. The sub-exhaust port 90 is formed to exhaust the gas in the film formation chamber 11 to the outside of the film formation chamber 11 before and after film formation on the substrate W. Before and after film formation on the substrate W, the gas in the film formation chamber 11 is exhausted from the sub-exhaust port 90 to the outside of the vacuum container 10 by a vacuum exhaust device 91 such as a vacuum pump. The vacuum exhaust device 91 is connected to the vacuum container 10.

再者，亦可於真空容器10的上表面14形成多個主排氣口80。藉此，即便於濺鍍裝置1的尺寸大的情況，即真空容器10的尺寸大的情況下，亦可充分地排出成膜室11內的氣體。另外，由於可均勻地排出成膜室11內的氣體，因此可於成膜室11內使對靶30供給的氣體的壓力變得均勻。亦可於真空容器10的底面13形成多個副排氣口90。Furthermore, a plurality of main exhaust ports 80 may be formed on the upper surface 14 of the vacuum container 10. Thereby, even when the size of the sputtering apparatus 1 is large, that is, when the size of the vacuum container 10 is large, the gas in the film forming chamber 11 can be sufficiently discharged. In addition, since the gas in the film formation chamber 11 can be discharged uniformly, the pressure of the gas supplied to the target 30 can be made uniform in the film formation chamber 11. A plurality of auxiliary exhaust ports 90 may be formed on the bottom surface 13 of the vacuum container 10.

此處，多個氣體排氣口51亦可分別以氣體的排氣速度為相等的方式，適宜決定其數量或大小或配置來形成於排氣板50。例如，亦可與主排氣口80的距離越大，越增多氣體排氣口51的數量、或越增大氣體排氣口51。另外，亦可與主排氣口80的距離越小，越減少氣體排氣口51的數量、或越減小氣體排氣口51。於圖2中，氣體排氣口51的數量與大小及配置一致的構成為一例。Here, the plurality of gas exhaust ports 51 may be formed in the exhaust plate 50 by appropriately determining the number, size, or arrangement of the gas exhaust ports 51 so that the exhaust speed of the gas is equal. For example, the greater the distance from the main exhaust port 80, the larger the number of gas exhaust ports 51, or the larger the gas exhaust ports 51. In addition, the smaller the distance from the main exhaust port 80, the smaller the number of gas exhaust ports 51 or the smaller the gas exhaust ports 51. In FIG. 2, the configuration in which the number, size, and arrangement of the gas exhaust ports 51 are the same is an example.

另外，多個氣體導入口41亦可分別以自各氣體導入口41朝成膜室11導入相等流量的氣體的方式，適宜決定其數量或大小或配置來形成於氣體導入管40。例如，亦可與氣體供給機構110的距離越大，越增多氣體導入口41的數量、或越增大氣體導入口41。另外，亦可與氣體供給機構110的距離越小，越減少氣體導入口41的數量、或越減小氣體導入口41。於圖2中，氣體導入口41的數量與大小及配置一致的構成為一例。In addition, the plurality of gas inlets 41 may be formed in the gas inlet pipe 40 by appropriately determining the number, size, or arrangement of the gas at the same flow rate from each gas inlet 41 to the film forming chamber 11. For example, the greater the distance from the gas supply mechanism 110, the larger the number of gas introduction ports 41, or the larger the gas introduction ports 41. In addition, the smaller the distance from the gas supply mechanism 110, the smaller the number of gas introduction ports 41, or the smaller the gas introduction ports 41. In FIG. 2, the configuration in which the number, size, and arrangement of the gas introduction ports 41 are consistent is an example.

[實施方式2] 圖3是表示本發明的實施方式2的濺鍍裝置2的構成的剖面圖。圖4是圖3中所示的濺鍍裝置2的內部的平面圖。具體而言，圖4是於圖3中從自基板W朝向天線20的方向觀察時的濺鍍裝置2的內部的平面圖。另外，於圖4中，省略天線20、基板保持部70及真空排氣裝置81、真空排氣裝置91。[Embodiment 2] FIG. 3 is a cross-sectional view showing the structure of a sputtering apparatus 2 according to Embodiment 2 of the present invention. FIG. 4 is a plan view of the inside of the sputtering device 2 shown in FIG. 3. Specifically, FIG. 4 is a plan view of the inside of the sputtering device 2 when viewed from the direction from the substrate W toward the antenna 20 in FIG. 3. In addition, in FIG. 4, the antenna 20, the substrate holding portion 70, the vacuum exhaust device 81, and the vacuum exhaust device 91 are omitted.

再者，為了便於說明，對具有與在所述實施方式中所說明的構件相同的功能的構件標記相同的符號，且不重複其說明。如圖3所示，濺鍍裝置2與濺鍍裝置1相比，氣體導入管40變更成氣體導入管40a這一點及包括防附著板120這一點不同。In addition, for convenience of description, members having the same functions as those described in the above-mentioned embodiments are given the same reference numerals, and the description thereof will not be repeated. As shown in FIG. 3, the sputtering device 2 is different from the sputtering device 1 in that the gas introduction pipe 40 is changed to a gas introduction pipe 40 a and that it includes the adhesion prevention plate 120.

氣體導入管40a朝與天線20的延伸方向相同的方向延伸，具有與天線20相向之側敞開的剖面凹形狀。具體而言，氣體導入管40a的凹面42a與天線20相向。作為氣體導入管40a的剖面凹形狀，例如亦可為コ字型的形狀、如凹面42a為曲面般的形狀或V字型的形狀。The gas introduction pipe 40a extends in the same direction as the extending direction of the antenna 20, and has a concave cross-sectional shape that is open on the side facing the antenna 20. Specifically, the concave surface 42 a of the gas introduction pipe 40 a faces the antenna 20. As the cross-sectional concave shape of the gas introduction pipe 40a, for example, a U-shaped shape, a shape such as a curved surface of the concave surface 42a, or a V-shaped shape may be used.

防附著板120針對氣體導入管40a的敞開側來設置，並且形成有多個氣體導入口121，用於防止自靶30放出的濺鍍粒子附著於氣體導入管40a。根據所述構成，針對氣體導入管40a來設置防附著板120，因此可更換自靶30放出的濺鍍粒子已附著的防附著板120來容易地進行維護。The adhesion prevention plate 120 is provided on the open side of the gas introduction pipe 40a, and is formed with a plurality of gas introduction ports 121 to prevent sputtering particles emitted from the target 30 from adhering to the gas introduction pipe 40a. According to the above configuration, since the adhesion preventing plate 120 is provided to the gas introduction pipe 40a, the adhesion preventing plate 120 to which the sputtered particles emitted from the target 30 have adhered can be replaced for easy maintenance.

另外，如圖4所示，從自基板W朝向天線20的方向觀察，防附著板120覆蓋氣體導入管40a。防附著板120配置於鄰接的兩塊靶30之間。即，防附著板120配置於所述第一空間S1內。排氣板50設置於氣體導入管40a的與敞開側相反的一側，形成有多個氣體排氣口51。於防附著板120，形成有用於將成膜室11內的氣體朝多個氣體排氣口51排出的多個第二氣體排氣口122。In addition, as shown in FIG. 4, when viewed from the direction from the substrate W toward the antenna 20, the adhesion prevention plate 120 covers the gas introduction pipe 40a. The adhesion prevention plate 120 is disposed between two adjacent targets 30. That is, the adhesion prevention plate 120 is arranged in the first space S1. The exhaust plate 50 is provided on the side opposite to the open side of the gas introduction pipe 40a, and a plurality of gas exhaust ports 51 are formed. The adhesion prevention plate 120 is formed with a plurality of second gas exhaust ports 122 for exhausting the gas in the film forming chamber 11 toward the plurality of gas exhaust ports 51.

根據所述構成，除氣體排氣口51以外，形成第二氣體排氣口122，因此可利用氣體排氣口51與第二氣體排氣口122的兩個階段來調整氣體的排氣量。因此，可容易地實現用於均勻地排出氣體的結構。According to the above configuration, in addition to the gas exhaust port 51, the second gas exhaust port 122 is formed. Therefore, the two stages of the gas exhaust port 51 and the second gas exhaust port 122 can be used to adjust the gas exhaust volume. Therefore, a structure for uniformly discharging gas can be easily realized.

多個第二氣體排氣口122形成於防附著板120的沿著延伸方向的兩端。多個防附著板120朝與天線20的延伸方向D1相同的方向延伸。多個第二氣體排氣口122中的一部分的第二氣體排氣口122形成於氣體導入口121與靶30之間。A plurality of second gas exhaust ports 122 are formed at both ends of the adhesion prevention plate 120 along the extending direction. The plurality of adhesion prevention plates 120 extend in the same direction as the extension direction D1 of the antenna 20. A part of the second gas exhaust port 122 among the plurality of second gas exhaust ports 122 is formed between the gas introduction port 121 and the target 30.

如圖4所示，形成於防附著板120的第二氣體排氣口122的數量比形成於防附著板120的氣體導入口121的數量多。除此以外，多個氣體排氣口51的總開口面積比多個氣體導入口121的總開口面積大，藉此可比朝成膜室11內的氣體的導入更優先進行自成膜室11朝外部的氣體的排氣。因此，可確保成膜室11內的壓力與排氣室15內的壓力的差壓，適當地維持成膜室11內的壓力。As shown in FIG. 4, the number of second gas exhaust ports 122 formed in the adhesion prevention plate 120 is greater than the number of gas introduction ports 121 formed in the adhesion prevention plate 120. In addition, the total opening area of the plurality of gas exhaust ports 51 is larger than the total opening area of the plurality of gas introduction ports 121, so that the gas from the film forming chamber 11 can be directed to the film forming chamber 11 prior to the introduction of gas into the film forming chamber 11. Exhaust of external gas. Therefore, the pressure difference between the pressure in the film formation chamber 11 and the pressure in the exhaust chamber 15 can be ensured, and the pressure in the film formation chamber 11 can be maintained appropriately.

＜變形例＞ 繼而，基於圖5對濺鍍裝置2的變形例進行說明。圖5是圖4中所示的濺鍍裝置2的變形例的內部的平面圖。將濺鍍裝置2的變形例稱為濺鍍裝置2a。如圖5所示，濺鍍裝置2a與濺鍍裝置2相比，分別設置有兩個中間配管100及氣體供給機構110這一點不同。<Modifications> Next, a modification example of the sputtering apparatus 2 will be described based on FIG. 5. FIG. 5 is a plan view of the inside of a modification of the sputtering device 2 shown in FIG. 4. A modification of the sputtering device 2 is referred to as a sputtering device 2a. As shown in FIG. 5, the sputtering device 2a is different from the sputtering device 2 in that two intermediate pipes 100 and a gas supply mechanism 110 are respectively provided.

於濺鍍裝置2a中，針對真空容器10的兩側，分別設置有兩個中間配管100及氣體供給機構110。於真空容器10的兩側，兩個中間配管100分別經由連接配管101而與多個氣體導入管40a連接。於兩個中間配管100分別連接有氣體供給機構110。另外，亦可針對真空容器10，分別設置三個以上的中間配管100及氣體供給機構110。於此情況下，多個中間配管100分別經由連接配管101而與多個氣體導入管40a連接。In the sputtering apparatus 2a, two intermediate pipes 100 and a gas supply mechanism 110 are provided on both sides of the vacuum container 10, respectively. On both sides of the vacuum container 10, two intermediate pipes 100 are connected to a plurality of gas introduction pipes 40a via the connecting pipe 101, respectively. A gas supply mechanism 110 is connected to the two intermediate pipes 100, respectively. In addition, three or more intermediate pipes 100 and gas supply mechanisms 110 may be provided for the vacuum container 10. In this case, the plurality of intermediate pipes 100 are connected to the plurality of gas introduction pipes 40a via the connection pipe 101, respectively.

藉此，即便於濺鍍裝置2a的尺寸大的情況，即真空容器10的尺寸大的情況下，亦可朝成膜室11內充分地導入氣體。因此，由於可朝成膜室11內充分地導入氣體，因此可於基板W適當地形成薄膜。Thereby, even when the size of the sputtering apparatus 2 a is large, that is, when the size of the vacuum container 10 is large, the gas can be sufficiently introduced into the film forming chamber 11. Therefore, since gas can be sufficiently introduced into the film forming chamber 11, a thin film can be appropriately formed on the substrate W.

＜總結＞ 本發明的一形態的濺鍍裝置包括：真空容器，於內部形成有收容基板的成膜室；多個天線，以與所述基板相向的方式設置，產生電漿；以及多個靶，相對於所述多個天線設置在與所述基板側相反的一側，是濺鍍的對象；於所述成膜室，形成用於朝所述成膜室內導入氣體的多個氣體導入口、及用於排出所述成膜室內的氣體的多個氣體排氣口，於所述多個靶之中鄰接的兩塊靶的任一者中，均相對於形成於所述兩塊靶之間的第一空間，以規定的第一位置關係配置所述天線，並且相對於配置於所述第一空間內的所述氣體導入口及所述氣體排氣口，以規定的第二位置關係配置所述天線。<Summary> A sputtering apparatus according to one aspect of the present invention includes: a vacuum vessel in which a film forming chamber for accommodating a substrate is formed; a plurality of antennas are arranged so as to face the substrate to generate plasma; and a plurality of targets facing The plurality of antennas are provided on the side opposite to the substrate side and are the subject of sputtering; in the film forming chamber, a plurality of gas inlets for introducing gas into the film forming chamber are formed, and The plurality of gas exhaust ports for discharging the gas in the film forming chamber, in any one of the two adjacent targets among the plurality of targets, are opposite to the first formed between the two targets A space in which the antennas are arranged in a predetermined first positional relationship, and the antennas are arranged in a predetermined second positional relationship with respect to the gas inlet and the gas exhaust port arranged in the first space antenna.

根據所述構成，於鄰接的兩塊靶的任一者中，天線與靶、氣體導入口、及氣體排氣口的位置關係均固定，因此可於成膜室內使對靶供給的氣體的壓力變得均勻。藉此，可提昇形成於基板的薄膜的均勻性。According to the above configuration, in either of the two adjacent targets, the positional relationship between the antenna and the target, the gas introduction port, and the gas exhaust port are fixed. Therefore, the pressure of the gas supplied to the target can be increased in the film forming chamber. Become uniform. Thereby, the uniformity of the thin film formed on the substrate can be improved.

亦可所述第一位置關係是所述天線與所述多個靶之中鄰接的兩塊靶各者的距離為相同的位置關係，所述第二位置關係是所述天線與所述氣體導入口及所述氣體排氣口相向的位置關係。根據所述構成，天線與鄰接的兩塊靶各者的距離為相同、且天線與氣體導入口及氣體排氣口相向，因此可使分別對鄰接的兩塊靶供給的氣體的壓力變得均勻。The first positional relationship may be that the distance between the antenna and two adjacent targets among the plurality of targets is the same positional relationship, and the second positional relationship may be that the antenna and the gas introduction The positional relationship between the port and the gas exhaust port facing each other. According to the above configuration, the distance between the antenna and the two adjacent targets is the same, and the antenna faces the gas inlet and the gas exhaust port, so the pressure of the gas supplied to the two adjacent targets can be made uniform. .

亦可以經由形成於氣體導入管與所述靶及靶保持部之間的第二空間來排出氣體的方式，將所述氣體排氣口形成於所述第二空間內的與和所述成膜室連通之側相反的一側。根據所述構成，自氣體導入口導入的氣體經由形成於氣體導入管與靶及靶保持部之間的第二空間而排出，因此氣體均勻地遍布成膜室內。藉此，於成膜室內，可提昇形成於基板的薄膜的均勻性。It is also possible to exhaust gas through a second space formed between the gas introduction pipe and the target and the target holder, and the gas exhaust port may be formed in the second space and the film formation The side opposite to the communicating side of the chamber. According to the above configuration, the gas introduced from the gas introduction port is discharged through the second space formed between the gas introduction pipe and the target and the target holding portion, so the gas is uniformly distributed in the film forming chamber. Thereby, in the film forming chamber, the uniformity of the thin film formed on the substrate can be improved.

所述濺鍍裝置亦可更包括：氣體導入管，朝與所述天線的延伸方向相同的方向延伸，具有與所述天線相向之側敞開的剖面凹形狀；以及防附著板，針對所述氣體導入管的敞開側來設置，並且形成有所述多個氣體導入口，用於防止自所述靶放出的濺鍍粒子附著於所述氣體導入管。根據所述構成，針對氣體導入管來設置防附著板，因此可更換自靶放出的濺鍍粒子已附著的防附著板來容易地進行維護。The sputtering device may further include: a gas introduction pipe that extends in the same direction as the extension direction of the antenna and has a concave cross-sectional shape that is open on the side opposite to the antenna; and an adhesion prevention plate for the gas The introduction pipe is provided on the open side, and the plurality of gas introduction ports are formed to prevent the sputtering particles emitted from the target from adhering to the gas introduction pipe. According to the above configuration, since the adhesion prevention plate is provided to the gas introduction pipe, the adhesion prevention plate to which the sputtered particles emitted from the target has adhered can be replaced to facilitate maintenance.

所述濺鍍裝置亦可更包括：排氣板，設置於所述氣體導入管的與敞開側相反的一側，形成有所述多個氣體排氣口；於所述防附著板，形成用於將所述成膜室內的氣體朝所述多個氣體排氣口排出的多個第二氣體排氣口。根據所述構成，除氣體排氣口以外，形成第二氣體排氣口，因此可利用氣體排氣口與第二氣體排氣口的兩個階段來調整氣體的排氣量。因此，可容易地實現用於均勻地排出氣體的結構。The sputtering device may further include: an exhaust plate disposed on the side of the gas introduction pipe opposite to the open side, and the plurality of gas exhaust ports are formed; and the adhesion preventing plate is formed with A plurality of second gas exhaust ports for exhausting the gas in the film forming chamber toward the plurality of gas exhaust ports. According to the above configuration, in addition to the gas exhaust port, the second gas exhaust port is formed. Therefore, the gas exhaust port and the second gas exhaust port can be used in two stages to adjust the gas exhaust volume. Therefore, a structure for uniformly discharging gas can be easily realized.

所述多個氣體導入口排列的方向與所述多個天線的延伸方向亦可為相同。根據所述構成，已被導入成膜室內的氣體被均勻地供給至天線。因此，由天線所生成的電漿於靶的表面均勻地擴散，因此於成膜室內，可提昇形成於基板的薄膜的均勻性。The direction in which the plurality of gas inlets are arranged may be the same as the extending direction of the plurality of antennas. According to the above configuration, the gas introduced into the film forming chamber is uniformly supplied to the antenna. Therefore, the plasma generated by the antenna uniformly spreads on the surface of the target, and therefore the uniformity of the thin film formed on the substrate in the film forming chamber can be improved.

本發明並不限定於所述各實施方式，可於請求項中所示的範圍內進行各種變更，將於不同的實施方式中分別揭示的技術手段適宜組合所獲得的實施方式亦包含於本發明的技術範圍內。The present invention is not limited to the above-mentioned embodiments, and various modifications can be made within the scope shown in the claims. The embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the present invention. Within the scope of technology.

1、2、2a:濺鍍裝置 10:真空容器 11:成膜室 12:側壁 13:底面 14:上表面 15:排氣室 20:天線 21:絕緣罩 30:靶 31:靶保持部 40、40a:氣體導入管 41、121:氣體導入口 42a:凹面 50:排氣板 51:氣體排氣口 60:絕緣部 70:基板保持部 80:主排氣口 90:副排氣口 81、91:真空排氣裝置 100:中間配管 101:連接配管 110:氣體供給機構 120:防附著板 122:第二氣體排氣口 D1:天線的延伸方向 D2:多個氣體導入管排列的方向 S1:第一空間 S2:第二空間 W:基板1, 2, 2a: Sputtering device 10: Vacuum container 11: Film forming chamber 12: side wall 13: bottom surface 14: upper surface 15: Exhaust chamber 20: Antenna 21: Insulating cover 30: target 31: Target holding part 40, 40a: gas inlet pipe 41, 121: gas inlet 42a: concave 50: Exhaust plate 51: Gas exhaust port 60: Insulation part 70: Board holding part 80: Main exhaust port 90: Secondary exhaust port 81, 91: Vacuum exhaust device 100: Intermediate piping 101: Connecting piping 110: Gas supply mechanism 120: Anti-adhesion board 122: second gas exhaust port D1: The extension direction of the antenna D2: The direction in which multiple gas inlet pipes are arranged S1: The first space S2: second space W: substrate

圖1是表示本發明的實施方式1的濺鍍裝置的構成的剖面圖。 圖2是圖1中所示的濺鍍裝置的內部的平面圖。 圖3是表示本發明的實施方式2的濺鍍裝置的構成的剖面圖。 圖4是圖3中所示的濺鍍裝置的內部的平面圖。 圖5是圖4中所示的濺鍍裝置的變形例的內部的平面圖。FIG. 1 is a cross-sectional view showing the structure of a sputtering apparatus according to Embodiment 1 of the present invention. Fig. 2 is a plan view of the inside of the sputtering device shown in Fig. 1. 3 is a cross-sectional view showing the configuration of a sputtering apparatus according to Embodiment 2 of the present invention. Fig. 4 is a plan view of the inside of the sputtering device shown in Fig. 3. Fig. 5 is a plan view of the inside of a modified example of the sputtering device shown in Fig. 4.

1:濺鍍裝置 1: Sputtering device

10:真空容器 10: Vacuum container

11:成膜室 11: Film forming chamber

12:側壁 12: side wall

13:底面 13: bottom surface

14:上表面 14: upper surface

15:排氣室 15: Exhaust chamber

20:天線 20: Antenna

21:絕緣罩 21: Insulating cover

30:靶 30: target

31:靶保持部 31: Target holding part

40:氣體導入管 40: Gas inlet pipe

41:氣體導入口 41: Gas inlet

50:排氣板 50: Exhaust plate

51:氣體排氣口 51: Gas exhaust port

60:絕緣部 60: Insulation part

70:基板保持部 70: Board holding part

80:主排氣口 80: Main exhaust port

90:副排氣口 90: Secondary exhaust port

81、91:真空排氣裝置 81, 91: Vacuum exhaust device

S1:第一空間 S1: The first space

S2:第二空間 S2: second space

W:基板 W: substrate

Claims (6)

一種濺鍍裝置，其特徵在於包括： 真空容器，於內部形成有收容基板的成膜室； 多個天線，以與所述基板相向的方式設置，產生電漿；以及 多個靶，相對於所述多個天線設置在與所述基板側相反的一側，是濺鍍的對象； 於所述成膜室，形成用於朝所述成膜室內導入氣體的多個氣體導入口、及用於排出所述成膜室內的氣體的多個氣體排氣口， 於所述多個靶之中鄰接的兩塊靶的任一者中，均相對於形成於所述兩塊靶之間的第一空間，以規定的第一位置關係配置所述天線，並且相對於配置於所述第一空間內的所述氣體導入口及所述氣體排氣口，以規定的第二位置關係配置所述天線。A sputtering device, characterized by comprising: The vacuum container has a film-forming chamber containing the substrate formed inside; A plurality of antennas are arranged in a manner facing the substrate to generate plasma; and A plurality of targets, which are arranged on a side opposite to the substrate side with respect to the plurality of antennas, are objects of sputtering; In the film forming chamber, a plurality of gas inlets for introducing gas into the film forming chamber and a plurality of gas exhaust ports for discharging the gas in the film forming chamber are formed, In any one of the two adjacent targets among the plurality of targets, the antenna is arranged in a predetermined first positional relationship with respect to the first space formed between the two targets, and is opposite to The antennas are arranged in a predetermined second positional relationship at the gas inlet and the gas outlet arranged in the first space. 如請求項1所述的濺鍍裝置，其中所述第一位置關係是所述天線與所述多個靶之中鄰接的兩塊靶各者的距離為相同的位置關係， 所述第二位置關係是所述天線與所述氣體導入口及所述氣體排氣口相向的位置關係。The sputtering apparatus according to claim 1, wherein the first positional relationship is a positional relationship in which the distance between the antenna and two adjacent targets among the plurality of targets is the same, The second positional relationship is a positional relationship in which the antenna faces the gas inlet and the gas outlet. 如請求項1或請求項2所述的濺鍍裝置，其中以經由形成於氣體導入管與所述靶及靶保持部之間的第二空間來排出氣體的方式，將所述氣體排氣口形成於所述第二空間內的與和所述成膜室連通之側相反的一側。The sputtering apparatus according to claim 1 or 2, wherein the gas exhaust port is exhausted through a second space formed between the gas introduction pipe and the target and the target holder. It is formed on the side opposite to the side communicating with the film forming chamber in the second space. 如請求項1至請求項3中任一項所述的濺鍍裝置，更包括： 氣體導入管，朝與所述天線的延伸方向相同的方向延伸，具有與所述天線相向之側敞開的剖面凹形狀；以及 防附著板，針對所述氣體導入管的敞開側來設置，並且形成有所述多個氣體導入口，用於防止自所述靶放出的濺鍍粒子附著於所述氣體導入管。The sputtering device according to any one of claim 1 to claim 3 further includes: The gas introduction tube extends in the same direction as the extension direction of the antenna, and has a concave cross-sectional shape that is open on the side opposite to the antenna; and The adhesion prevention plate is provided for the open side of the gas introduction pipe, and the plurality of gas introduction ports are formed for preventing the sputtering particles emitted from the target from adhering to the gas introduction pipe. 如請求項4所述的濺鍍裝置，更包括： 排氣板，設置於所述氣體導入管的與敞開側相反的一側，形成有所述多個氣體排氣口； 於所述防附著板，形成用於將所述成膜室內的氣體朝所述多個氣體排氣口排出的多個第二氣體排氣口。The sputtering device as described in claim 4 further includes: An exhaust plate, arranged on the side of the gas introduction pipe opposite to the open side, and formed with the plurality of gas exhaust ports; The adhesion preventing plate is formed with a plurality of second gas exhaust ports for exhausting the gas in the film forming chamber toward the plurality of gas exhaust ports. 如請求項1至請求項5中任一項所述的濺鍍裝置，其中所述多個氣體導入口排列的方向與所述多個天線的延伸方向相同。The sputtering device according to any one of claims 1 to 5, wherein the direction in which the plurality of gas inlets are arranged is the same as the extending direction of the plurality of antennas.
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