TW202032833A - Producing method of mask, producing method of template for supporting mask and producing method of mask integrated frame - Google Patents

Producing method of mask, producing method of template for supporting mask and producing method of mask integrated frame Download PDF

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TW202032833A
TW202032833A TW108137712A TW108137712A TW202032833A TW 202032833 A TW202032833 A TW 202032833A TW 108137712 A TW108137712 A TW 108137712A TW 108137712 A TW108137712 A TW 108137712A TW 202032833 A TW202032833 A TW 202032833A
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mask
frame
metal film
template
manufacturing
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李炳一
張澤龍
李裕進
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南韓商Tgo科技股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

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  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The present invention relates to a method for manufacturing a mask, a method for manufacturing a template for supporting a mask, and a method for manufacturing a frame-integrated mask. According to the present invention, the method for manufacturing a mask is a method for manufacturing an OLED pixel-forming mask, and comprises the steps of: (a) providing a mask metal film; and (b) forming a mask pattern on one surface of the mask metal film by laser patterning.

Description

遮罩的製造方法，遮罩支撐模板的製造方法及框架一體型遮罩的製造方法Mask manufacturing method, mask support template manufacturing method, and frame integrated mask manufacturing method

本發明是有關於遮罩的製造方法，遮罩支撐模板的製造方法及框架一體型遮罩的製造方法。更加詳細而言，有關於使遮罩的遮罩圖案準確地形成，使遮罩不發生變形且可以穩定地得到支撐並移動，遮罩與框架形成一體時，能夠改善遮罩與框架的黏著性，且使各個遮罩之間對準(align)精確之遮罩的製造方法，遮罩支撐模板的製造方法及框架一體型遮罩的製造方法。The invention relates to a manufacturing method of a mask, a manufacturing method of a mask support template, and a manufacturing method of a frame-integrated mask. In more detail, it is about accurately forming the mask pattern of the mask so that the mask is not deformed and can be stably supported and moved. When the mask and the frame are integrated, the adhesion between the mask and the frame can be improved. The manufacturing method of the mask, the manufacturing method of the mask supporting template, and the manufacturing method of the frame-integrated mask.

作為OLED製造工藝中形成像素的技術，主要使用FMM（Fine Metal Mask）方法，該方法將薄膜形式的金屬遮罩（Shadow Mask，陰影遮罩）緊貼於基板並且在所需位置上沉積有機物。As a pixel formation technology in the OLED manufacturing process, the FMM (Fine Metal Mask) method is mainly used, which attaches a thin-film metal mask (Shadow Mask) to the substrate and deposits organic matter on a desired position.

在現有的OLED製造工藝中，將遮罩製造成條狀、板狀等之後，將遮罩焊接固定到OLED像素沉積框架並使用。一個遮罩上可以具備與一個顯示器對應的多個單元。另一方面，為了製造大面積OLED，可將多個遮罩固定於OLED像素沉積框架，在固定於框架的過程中，拉伸各個遮罩，以使其變得平坦。調節拉伸力以使遮罩的整體部分變得平坦是非常困難的作業。特別是，為了使各個單元全部變得平坦，同時對準尺寸僅為數μm至數十μm的遮罩圖案，需要微調施加到遮罩各側的拉伸力並且實時確認對準狀態之高度作業。In the existing OLED manufacturing process, after the mask is manufactured into a strip shape, a plate shape, etc., the mask is welded and fixed to the OLED pixel deposition frame and used. One mask can be provided with multiple units corresponding to one display. On the other hand, in order to manufacture a large-area OLED, multiple masks can be fixed to the OLED pixel deposition frame, and in the process of fixing to the frame, each mask is stretched to make it flat. It is a very difficult task to adjust the stretching force to make the entire part of the mask flat. In particular, in order to make all the cells flat while aligning the mask pattern with a size of only a few μm to several tens of μm, it is necessary to fine-tune the stretching force applied to each side of the mask and confirm the alignment status in real time.

儘管如此，在將多個遮罩固定於一個框架的過程中，仍然存在遮罩之間與遮罩單元之間對準不好的問題。另一方面，在將遮罩焊接固定於框架的過程中，遮罩膜的厚度過薄且面積大，因此存在遮罩因荷重而下垂或者扭曲的問題，以及焊接過程中因焊接部分發生的皺紋、毛邊（burr）等使遮罩單元的對準錯開的問題等。Nevertheless, in the process of fixing multiple masks to one frame, there is still a problem of poor alignment between masks and mask units. On the other hand, in the process of welding and fixing the mask to the frame, the thickness of the mask film is too thin and the area is large, so there is a problem that the mask sags or twists due to the load, and wrinkles occur in the welding part during the welding process. , Burr and other issues that make the alignment of the mask unit misaligned.

在超高清的OLED中，現有的QHD（Quarter High Definition）畫質為500-600PPI（pixel per inch），像素的尺寸達到約30-50μm，而4K UHD（Ultra High Definition）、8K UHD高清具有比之更高的~860PPI，~1600PPI等的解析度。如此，考慮到超高清的OLED的像素尺寸，需要將各單元之間的對準誤差縮減為數μm程度，超出這一誤差將導致產品的不良，所以產率可能極低。因此，需要開發能夠防止遮罩的下垂或者扭曲等變形並且使對準精確的技術，以及將遮罩固定於框架的技術等。In ultra-high definition OLEDs, the existing QHD (Quarter High Definition) image quality is 500-600PPI (pixel per inch), and the pixel size reaches about 30-50μm, while 4K UHD (Ultra High Definition) and 8K UHD have higher The higher the resolution of ~860PPI, ~1600PPI, etc. In this way, considering the pixel size of the ultra-high-definition OLED, the alignment error between each unit needs to be reduced to a few μm. Exceeding this error will result in product failure, so the yield may be extremely low. Therefore, it is necessary to develop a technology that can prevent deformation such as sagging or twisting of the mask and make the alignment accurate, and a technology that fixes the mask to the frame, and the like.

發明欲解決之課題Problems to be solved by the invention

因此，本發明是用以解決如前述習知技術的各種問題所研究而成，其目的在於提供一種當製造遮罩時可藉由簡單的工藝對遮罩金屬膜進行圖案化，且可執行細微圖案化之遮罩的製造方法及遮罩支撐模板的製造方法。Therefore, the present invention is developed to solve the various problems of the aforementioned conventional technology, and its purpose is to provide a simple process for patterning the mask metal film when manufacturing the mask, and the fineness can be performed. The manufacturing method of the patterned mask and the manufacturing method of the mask support template.

又，本發明的目的在於提供一種使遮罩不發生變形且可以穩定地支撐並使其移動的遮罩支撐模板的製造方法。In addition, an object of the present invention is to provide a method for manufacturing a mask support template that can stably support and move the mask without being deformed.

又，本發明的目的在於提供一種將遮罩附著於框架上時能夠改善遮罩與框架的黏著性之遮罩支撐模板的製造方法。Furthermore, the object of the present invention is to provide a method for manufacturing a mask support template that can improve the adhesion between the mask and the frame when the mask is attached to the frame.

又，本發明的目的在於提供一種將遮罩附著到框架上之後可反復使用的遮罩支撐模板與其製造方法。Furthermore, the object of the present invention is to provide a mask support template that can be used repeatedly after the mask is attached to the frame, and a manufacturing method thereof.

又，本發明的目的在於提供一種遮罩與框架可構成一體型構造之框架一體型遮罩的製造方法。In addition, the object of the present invention is to provide a method for manufacturing a frame-integrated mask in which the mask and the frame can form an integrated structure.

又，本發明的目的在於提供一種防止遮罩下垂或扭曲等的變形，並且可準確地進行對準之框架一體型遮罩的製造方法。In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask that prevents the mask from sagging or twisting and other deformation, and can accurately align the mask.

又，本發明的目的在於提供一種明顯縮短製造時間，並且使產率顯著提升之框架一體型遮罩的製造方法。解決課題之方法 In addition, the object of the present invention is to provide a method for manufacturing a frame-integrated mask that significantly shortens the manufacturing time and significantly improves the yield. Methods to solve the problem

本發明的前述目的藉由一種OLED像素形成用遮罩的製造方法來達成，該方法包括以下步驟：（a）準備遮罩金屬膜；以及（b）在遮罩金屬膜的一面基於雷射圖案化形成遮罩圖案。The foregoing object of the present invention is achieved by a method of manufacturing a mask for forming an OLED pixel. The method includes the following steps: (a) preparing a mask metal film; and (b) based on a laser pattern on one side of the mask metal film To form a mask pattern.

在步驟（b）中，雷射可具有毫微秒、飛秒、皮秒中任意一個脈寬。In step (b), the laser can have any pulse width among nanoseconds, femtoseconds, and picoseconds.

在步驟（b）中，以遮罩金屬膜的厚度方向為基準，在遮罩金屬膜的上部照射焦點範圍寬的雷射，越是靠近遮罩金屬膜的下部使用焦點範圍窄的雷射進行照射，藉以可進行雷射圖案化。In step (b), based on the thickness direction of the mask metal film, a laser with a wide focus range is irradiated on the upper part of the mask metal film, and a laser with a narrow focus range is used for the lower part of the mask metal film. Irradiation, whereby laser patterning can be performed.

在步驟（b）中，以遮罩金屬膜的厚度方向為基準，以遮罩金屬膜不被貫穿的程度進行蝕刻之後，基於雷射圖案化形成遮罩圖案以使遮罩金屬膜被貫穿。In step (b), taking the thickness direction of the mask metal film as a reference, after etching to the extent that the mask metal film is not penetrated, a mask pattern is formed based on laser patterning so that the mask metal film is penetrated.

又，本發明的前述目的藉由一種遮罩支撐模板的製造方法來達成，該模板（template）用於支撐OLED像素形成用遮罩並使遮罩與框架對應，該製造方法包括以下步驟：（a）準備遮罩金屬膜；（b）將遮罩金屬膜黏合於一面形成有臨時黏合部之模板上；以及（c）在遮罩金屬膜的一面基於雷射圖案化形成遮罩圖案，以製造遮罩。In addition, the aforementioned object of the present invention is achieved by a manufacturing method of a mask support template, which is used to support the OLED pixel forming mask and make the mask correspond to the frame. The manufacturing method includes the following steps: ( a) Prepare the mask metal film; (b) Glue the mask metal film to a template with a temporary bonding part formed on one side; and (c) Form a mask pattern based on laser patterning on one side of the mask metal film to Make a mask.

在步驟（c）中，雷射可具有毫微秒、飛秒、皮秒中任意一個脈寬。In step (c), the laser can have any pulse width among nanoseconds, femtoseconds, and picoseconds.

在步驟（c）中，以遮罩金屬膜的厚度方向為基準，在遮罩金屬膜的上部照射焦點範圍寬的雷射，越是靠近遮罩金屬膜的下部使用焦點範圍窄的雷射進行照射，藉以可進行雷射圖案化。In step (c), based on the thickness direction of the mask metal film, a laser with a wide focus range is irradiated on the upper part of the mask metal film, and a laser with a narrow focus range is used for the lower part of the mask metal film. Irradiation, whereby laser patterning can be performed.

在步驟（c）中，以遮罩金屬膜的厚度方向為基準，以遮罩金屬膜不被貫穿的程度進行蝕刻之後，可基於雷射圖案化形成遮罩圖案以使遮罩金屬膜被貫穿。In step (c), taking the thickness direction of the mask metal film as a reference, after etching to the extent that the mask metal film is not penetrated, a mask pattern can be formed based on laser patterning to make the mask metal film penetrate .

臨時黏合部可以是基於加熱可分離的黏合劑或者黏合片材，基於照射UV可分離的黏合劑或者黏合片材。The temporary bonding part may be an adhesive or an adhesive sheet detachable based on heating, or an adhesive or an adhesive sheet detachable based on UV irradiation.

又，本發明的前述目的藉由一種框架一體型遮罩的製造方法來達成，該框架一體型遮罩由至少一個遮罩與用於支撐遮罩的框架形成為一體，該框架一體型遮罩的製造方法包括以下步驟：（a）在具備至少一個遮罩單元區域的框架上裝載藉由請求項5之製造方法製造而成的模板，並使遮罩與框架的遮罩單元區域對應；以及（b）將遮罩附著於框架上。發明效果 In addition, the aforementioned object of the present invention is achieved by a manufacturing method of a frame-integrated shield. The frame-integrated shield is formed by integrating at least one shield and a frame for supporting the shield. The frame-integrated shield The manufacturing method includes the following steps: (a) Mount the template manufactured by the manufacturing method of claim 5 on a frame with at least one mask unit area, and make the mask correspond to the mask unit area of the frame; and (B) Attach the mask to the frame. Invention effect

根據如上構成之本發明，當製造遮罩時，可藉由簡單的工藝對遮罩金屬膜進行圖案化，且可執行細微圖案化。According to the present invention constituted as above, when the mask is manufactured, the mask metal film can be patterned by a simple process, and fine patterning can be performed.

又，根據本發明，使遮罩不發生變形且可以穩定地支撐並使其移動。Furthermore, according to the present invention, the mask can be stably supported and moved without deformation.

又，根據本發明，將遮罩附著於框架上時，能夠改善遮罩與框架的黏著性。Furthermore, according to the present invention, when the mask is attached to the frame, the adhesion between the mask and the frame can be improved.

又，根據本發明，將遮罩附著於框架上之後可反復使用。Furthermore, according to the present invention, the mask can be used repeatedly after being attached to the frame.

又，根據本發明，遮罩與框架可構成一體型結構。Furthermore, according to the present invention, the shield and the frame can form an integrated structure.

又，根據本發明，可防止遮罩下垂或扭曲等的變形，並且可準確地進行對準。Furthermore, according to the present invention, deformation such as sagging or twisting of the mask can be prevented, and the alignment can be accurately performed.

又，根據本發明，可使製造時間顯著地縮短，且使產率顯著上昇。Moreover, according to the present invention, the manufacturing time can be significantly shortened, and the yield can be significantly increased.

後述的對於本發明的詳細說明將參照圖式，該附圖將能夠實施本發明的特定實施例作為示例示出。充分詳細地說明這些實施例，以使所屬技術領域中具有通常知識者能夠實施本發明。應當理解，本發明的各種實施例雖然彼此不同，但是並非相互排斥。例如，在此記載的特定形狀、結構及特性與一實施例有關，在不脫離本發明的精神及範圍的情況下，能夠實施為其他實施例。另一方面，應當理解，各個公開的實施例中的個別構成要素的位置或配置，在不脫離本發明的精神及範圍的情況下，能夠進行變更。故，後述的詳細說明不應被視為具有限制意義，只要適當地說明，則本發明的範圍僅由所附的申請專利範圍及與其等同的所有範圍限定。圖式中相似的符號從多方面表示相同或相似的功能，為了方便起見，長度、面積、厚度及其形狀可以誇大表示。The detailed description of the present invention to be described later will refer to the drawings, which illustrate specific embodiments capable of implementing the present invention as examples. These embodiments are explained in sufficient detail so that those with ordinary knowledge in the technical field can implement the present invention. It should be understood that although the various embodiments of the present invention are different from each other, they are not mutually exclusive. For example, the specific shapes, structures, and characteristics described herein are related to one embodiment, and can be implemented in other embodiments without departing from the spirit and scope of the present invention. On the other hand, it should be understood that the position or arrangement of the individual constituent elements in each disclosed embodiment can be changed without departing from the spirit and scope of the present invention. Therefore, the following detailed description should not be regarded as having a restrictive meaning. As long as it is properly described, the scope of the present invention is limited only by the scope of the attached patent application and all equivalent scopes. Similar symbols in the drawings represent the same or similar functions from many aspects. For convenience, the length, area, thickness and shape can be exaggerated.

以下，將參照圖式對本發明的優選實施例進行詳細說明，以便所屬技術領域中具有通常知識者能夠容易地實施本發明。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings, so that those with ordinary knowledge in the technical field can easily implement the present invention.

圖1是示出現有的OLED像素沉積用遮罩的概略圖。FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition.

參照圖1，現有的遮罩10可以以條式（Stick-Type）或者板式（Plate-Type）製造。圖1（a）中示出的遮罩10作為條式遮罩，可以將條的兩側焊接固定於OLED像素沉積框架並使用。圖1（b）中示出的遮罩100作為板式（Plate-Type）遮罩，可以使用於大面積的像素形成工藝。1, the existing mask 10 can be manufactured in a stick-type or a plate-type. The mask 10 shown in FIG. 1(a) is used as a strip mask, and both sides of the strip can be welded and fixed to the OLED pixel deposition frame and used. The mask 100 shown in FIG. 1(b) is used as a plate-type mask and can be used in a large area pixel formation process.

遮罩10的主體（Body，或者遮罩膜11）具備多個顯示單元C。一個單元C與智慧手機等的一個顯示器（display）對應。單元C中形成有像素圖案P，以便與顯示器的各個像素對應。放大單元C時，將顯示與R、G、B對應的多個像素圖案P。作為一例，單元C上形成有像素圖案P，以便具有70×140解析度。即，大量的像素圖案P形成集合，以構成一個單元C，並且多個單元C可以形成於遮罩10。The main body (Body, or mask film 11) of the mask 10 includes a plurality of display units C. One cell C corresponds to one display of a smart phone or the like. A pixel pattern P is formed in the cell C so as to correspond to each pixel of the display. When the unit C is enlarged, a plurality of pixel patterns P corresponding to R, G, and B will be displayed. As an example, a pixel pattern P is formed on the cell C so as to have a resolution of 70×140. That is, a large number of pixel patterns P form a set to constitute one cell C, and a plurality of cells C may be formed in the mask 10.

圖2是示出現有的將遮罩10附著於框架20之過程的概略圖。圖3是示出在現有的拉伸F1~F2遮罩10的過程中發生單元之間的對準誤差的概略圖。以圖1（a）示出的具備6個單元C（C1~C6）的條式遮罩10為例進行說明。FIG. 2 is a schematic diagram showing the process of attaching the mask 10 to the frame 20 in the prior art. FIG. 3 is a schematic diagram showing that an alignment error between units occurs in the process of stretching the F1 to F2 mask 10 in the prior art. Take the strip mask 10 with 6 cells C (C1 to C6) shown in FIG. 1(a) as an example for description.

參照圖2（a），首先，應將條式遮罩10平坦地展開。沿著條式遮罩10的長軸方向施加拉伸力F1~F2，隨著拉伸，展開條式遮罩10。在該狀態下，將條式遮罩10裝載於方框形狀的框架20上。條式遮罩10的單元C1~C6將位於框架20的框內部空白區域部分。框架20的尺寸可以足以使一個條式遮罩10的單元C1~C6位於框內部空白區域，也可以足以使多個條式遮罩10的單元C1~C6位於框內部空白區域。Referring to Fig. 2(a), first, the strip mask 10 should be spread out flat. Stretching forces F1 to F2 are applied along the long axis direction of the strip mask 10, and with the stretching, the strip mask 10 is unfolded. In this state, the strip mask 10 is mounted on the frame 20 having a square shape. The cells C1 to C6 of the strip mask 10 will be located in the blank area of the frame 20. The size of the frame 20 may be sufficient for the cells C1 to C6 of one strip mask 10 to be located in the blank area inside the frame, or it may be sufficient for the cells C1 to C6 of multiple strip masks 10 to be located in the blank area inside the frame.

參照圖2（b），微調施加到條式遮罩10的各側的拉伸力F1~F2，同時對準後，藉由焊接W條式遮罩10側面的一部分，將條式遮罩10和框架20彼此連接。圖2（c）示出彼此連接的條式遮罩10和框架的側截面。2(b), fine-tune the tensile forces F1~F2 applied to each side of the strip mask 10, and after alignment at the same time, by welding a part of the side of the W strip mask 10, the strip mask 10 And the frame 20 are connected to each other. FIG. 2(c) shows a side section of the strip mask 10 and the frame connected to each other.

參照圖3，儘管微調施加到條式遮罩10的各側的拉伸力F1~F2，但依然存在遮罩單元C1~C3彼此之間對準不好的問題。例如，單元C1~C3的圖案P之間的距離D1~D1''、D2~D2''彼此不同，或者圖案P歪斜。由於條式遮罩10具有包括多個（作為一例，為6個）單元C1~C6的大面積，且具有數十μm的非常薄的厚度，因此容易因荷重而下垂或者扭曲。另一方面，調節拉伸力F1~F2，以使各個單元C1~C6全部變得平坦，同時通過顯微鏡實施確認各個單元C1~C6之間的對準狀態是非常困難的作業。Referring to FIG. 3, although the tensile forces F1 to F2 applied to each side of the strip mask 10 are fine-tuned, there is still a problem that the mask units C1 to C3 are not properly aligned with each other. For example, the distances D1 to D1" and D2 to D2" between the patterns P of the cells C1 to C3 are different from each other, or the patterns P are skewed. Since the strip mask 10 has a large area including a plurality of (for example, six) cells C1 to C6 and has a very thin thickness of several tens of μm, it is likely to sag or be twisted due to a load. On the other hand, adjusting the tensile forces F1 to F2 so that all the units C1 to C6 become flat, and it is very difficult to confirm the alignment of the units C1 to C6 through a microscope.

因此，拉伸力F1~F2的微小誤差可能引起條式遮罩10各單元C1~C3的拉伸或者展開程度的誤差，藉此，導致遮罩圖案P之間的距離D1~D1''、D2~D2''不同。雖然完美地對準以使誤差為0是非常困難的，但是為了避免尺寸為數μm至數十μm的遮罩圖案P對超高清OLED的像素工藝造成壞影響，對準誤差宜不大於3μm。將如此相鄰的單元之間的對準誤差稱為像素定位精度（pixel position accuracy，PPA）。Therefore, the slight error of the stretching force F1~F2 may cause an error in the degree of stretching or unfolding of each unit C1~C3 of the strip mask 10, thereby resulting in the distance D1~D1'' between the mask patterns P. D2~D2'' are different. Although it is very difficult to align perfectly so that the error is zero, in order to avoid the mask pattern P with a size of several μm to tens of μm from adversely affecting the pixel process of the ultra-high-definition OLED, the alignment error should not be greater than 3 μm. The alignment error between such adjacent cells is called pixel position accuracy (PPA).

另一方面，將大概6-20個條式遮罩10分別連接在一個框架20，同時使多個條式遮罩10之間及條式遮罩10的多個單元C-C6之間的對準狀態精確是非常困難的作業，並且基於對準的工藝時間不得不增加，這成為降低生產性的重要理由。On the other hand, about 6-20 strip masks 10 are connected to one frame 20, and the pairs of strip masks 10 and the cells C-C6 of the strip mask 10 Accuracy of the quasi-state is a very difficult task, and the process time based on the alignment has to be increased, which becomes an important reason for reducing productivity.

另一方面，將條式遮罩10連接固定到框架20後，施加到條式遮罩10的拉伸力F1~F2會反向地作用於框架20。即，由於拉伸力F1~F2而繃緊拉伸的條式遮罩10連接到框架20後，會將張力（tension）作用於框架20。通常，該張力不大，不會對框架20產生大的影響，但是在框架20的尺寸實現小型化且剛性變低的情況下，這種張力可能使框架20細微變形。如此，可能發生破壞多個單元C~C6間的對準狀態的問題。On the other hand, after the strip mask 10 is connected and fixed to the frame 20, the tensile forces F1 to F2 applied to the strip mask 10 will act on the frame 20 in reverse. That is, after the strip mask 10 stretched tightly due to the stretching forces F1 to F2 is connected to the frame 20, tension is applied to the frame 20. Normally, this tension is not large and does not have a large impact on the frame 20. However, when the size of the frame 20 is reduced and the rigidity becomes low, this tension may slightly deform the frame 20. In this way, a problem of destroying the alignment state between the plurality of cells C to C6 may occur.

鑒於此，本發明提出能夠使遮罩100與框架200形成一體式結構的框架200及框架一體型遮罩。與框架200形成一體的遮罩100不僅防止發生下垂或者扭曲等變形，並且能夠與框架200精確地對準。當遮罩100連接到框架200時，不對遮罩100施加任何拉伸力，因此遮罩100連接到框架200後，不會對框架200施加張力以致框架200變形。並且，能夠顯著地縮短將遮罩100一體地連接到框架200上的製造時間，並且顯著提升產率。In view of this, the present invention proposes a frame 200 and a frame-integrated cover that can make the cover 100 and the frame 200 form an integrated structure. The mask 100 integrated with the frame 200 not only prevents deformation such as sagging or twisting, but also can be accurately aligned with the frame 200. When the mask 100 is connected to the frame 200, no stretching force is applied to the mask 100. Therefore, after the mask 100 is connected to the frame 200, no tension is applied to the frame 200 to deform the frame 200. Moreover, the manufacturing time for integrally connecting the mask 100 to the frame 200 can be significantly shortened, and the productivity can be significantly improved.

圖4是示出本發明之一實施例涉及的框架一體型遮罩的主視圖（圖4（a））及側截面圖（圖4（b）），圖5是示出本發明之一實施例涉及的框架的主視圖（圖5（a））及側截面圖（圖5b）。Fig. 4 is a front view (Fig. 4(a)) and a side sectional view (Fig. 4(b)) of a frame-integrated mask according to an embodiment of the present invention, and Fig. 5 is a diagram showing an implementation of the present invention The front view (Figure 5(a)) and side sectional view (Figure 5b) of the frame involved in the example.

參照圖4以及圖5，框架一體型遮罩可以包括多個遮罩100以及一個框架200。換句話說，是將多個遮罩100分別附著於框架200的形態。以下，為了便於說明，以四角形狀的遮罩100為例進行說明，但是遮罩100在附著於框架200之前，可以是兩側具備用於夾持的突出部之條式遮罩形狀，遮罩100附著於框架200後，可以除去突出部。4 and 5, the frame-integrated mask may include a plurality of masks 100 and one frame 200. In other words, it is a form in which a plurality of masks 100 are attached to the frame 200 respectively. Hereinafter, for the convenience of description, a square mask 100 is used as an example for description. However, before the mask 100 is attached to the frame 200, it may be a strip mask shape with protrusions for clamping on both sides. After 100 is attached to the frame 200, the protrusion can be removed.

各個遮罩100上形成有多個遮罩圖案P，一個遮罩100可以形成有一個單元C。一個遮罩單元C可以與智慧手機等的一個顯示器對應。A plurality of mask patterns P are formed on each mask 100, and one cell C may be formed on one mask 100. One mask unit C can correspond to one display of a smart phone or the like.

遮罩100可以是熱膨脹係數約為1.0×10-6 /℃的恆範鋼（invar）或約為1.0×10-7 /℃的超恆範鋼（super invar）材料。由於這種材料的遮罩100的熱膨脹係數非常低，遮罩的圖案形狀因熱能變形的可能性小，在製造高解析度的OLED中，可以用作FMM（Fine Metal Mask）、陰影遮罩（Shadow Mask）。此外，考慮到最近正在開發在溫度變化值不大的範圍內實施像素沉積工藝的技術，遮罩100也可以是熱膨脹係數比之略大的鎳（Ni）、鎳-鈷（Ni-Co）等材料。遮罩100可使用由壓延（rolling）工藝或者電鑄（electroforming）生成的金屬片材（sheet）。下面通過圖9及圖10具體說明。The mask 100 may be invar steel (invar) with a thermal expansion coefficient of about 1.0×10 -6 /°C or super invar steel (super invar) with a thermal expansion coefficient of about 1.0×10 -7 /°C. Since the coefficient of thermal expansion of the mask 100 of this material is very low, the pattern shape of the mask is less likely to be deformed due to thermal energy. In the manufacture of high-resolution OLEDs, it can be used as FMM (Fine Metal Mask), shadow mask ( Shadow Mask). In addition, considering that a technology for implementing a pixel deposition process within a range where the temperature change value is not large is being recently developed, the mask 100 may also be nickel (Ni), nickel-cobalt (Ni-Co), etc., which have a slightly larger thermal expansion coefficient. material. The mask 100 may use a metal sheet generated by a rolling process or electroforming. This will be described in detail below with reference to Figs.

框架200以能夠附著多個遮罩100的形式形成。包括最週邊邊緣在內，框架200可以包括沿著第一方向（例如，橫向）、第二方向（例如，竪向）形成的多個角部。這種多個角部可以在框架200上劃分用於附著遮罩100的區域。The frame 200 is formed in a form capable of attaching a plurality of masks 100. Including the most peripheral edge, the frame 200 may include a plurality of corners formed along a first direction (for example, a lateral direction) and a second direction (for example, a vertical direction). Such multiple corners may divide an area for attaching the mask 100 on the frame 200.

框架200可以包括大概呈四角形狀、方框形狀的邊緣框架部210。邊緣框架部210的內部可以是中空形狀。即，邊緣框架部210可以包括中空區域R。框架200可以由恒範鋼、超恒範鋼、鋁、鈦等金屬材料形成，考慮到熱變形，優選由與遮罩具有相同熱膨脹係數的恒範鋼、超恒範鋼、鎳、鎳-鈷等材料形成，這些材料均可應用於所有作為框架200的構成要素之邊緣框架部210、遮罩單元片材部220。The frame 200 may include an edge frame part 210 roughly in a square shape and a box shape. The inside of the edge frame part 210 may be a hollow shape. That is, the edge frame part 210 may include the hollow region R. The frame 200 may be formed of metal materials such as Hengfan steel, super Hengfan steel, aluminum, titanium, etc. In consideration of thermal deformation, it is preferably made of Hengfan steel, ultra Hengfan steel, nickel, nickel-cobalt having the same thermal expansion coefficient as the mask. These materials can be applied to all the edge frame parts 210 and the mask unit sheet parts 220 that are the constituent elements of the frame 200.

進一步地，框架200具備多個遮罩單元區域CR，並且可以包含連接到邊緣框架部210的遮罩單元片材部220。遮罩單元片材部220與遮罩100相同，可通過壓延形成，或者通過電鑄等其他的成膜工藝形成。另一方面，遮罩單元片材部220可以通過雷射劃綫、蝕刻等在平面狀片材（sheet）上形成多個遮罩單元區域CR後，連接到邊緣框架部210。或者，遮罩單元片材部220可以將平面狀的片材連接到邊緣框架部210後，通過雷射劃線、蝕刻等形成多個遮罩單元區域CR。本說明書中主要對首先在遮罩單元片材部220形成多個遮罩單元區域CR後，連接到邊緣框架部210的情況進行說明。Further, the frame 200 is provided with a plurality of mask unit regions CR, and may include a mask unit sheet part 220 connected to the edge frame part 210. The mask unit sheet portion 220 is the same as the mask 100, and can be formed by rolling or by other film forming processes such as electroforming. On the other hand, the mask unit sheet part 220 may be connected to the edge frame part 210 after forming a plurality of mask unit regions CR on a planar sheet by laser scribing, etching, or the like. Alternatively, the mask unit sheet portion 220 may connect a planar sheet to the edge frame portion 210, and then form a plurality of mask unit regions CR by laser scribing, etching, or the like. In this specification, first, a case where a plurality of mask unit regions CR are formed in the mask unit sheet portion 220 and then connected to the edge frame portion 210 will be described.

遮罩單元片材部220可以包括邊緣片材部221以及第一柵格片材部223、第二柵格片材部225中的至少一種。邊緣片材部221及第一柵格片材部223、第二柵格片材部225是指在同一片材上劃分的各個部分，它們彼此形成為一體。The mask unit sheet part 220 may include an edge sheet part 221 and at least one of a first grid sheet part 223 and a second grid sheet part 225. The edge sheet part 221, the first grid sheet part 223, and the second grid sheet part 225 refer to the respective parts divided on the same sheet, and they are formed integrally with each other.

邊緣片材部221可以實質上連接到邊緣框架部210。因此，邊緣片材部221可以具有與邊緣框架部210對應的大致四角形狀、方框形狀。The edge sheet part 221 may be substantially connected to the edge frame part 210. Therefore, the edge sheet part 221 may have a substantially square shape or a box shape corresponding to the edge frame part 210.

另一方面，第一柵格片材部223可以沿著第一方向（橫向）延伸形成。第一柵格片材部223以直綫形態形成，其兩端可以連接到邊緣片材部221。當遮罩單元片材部220包括多個第一柵格片材部223時，各個第一柵格片材部223宜具有相同的間距。On the other hand, the first grid sheet part 223 may be formed to extend along the first direction (lateral direction). The first grid sheet part 223 is formed in a linear form, and both ends of the first grid sheet part 223 may be connected to the edge sheet part 221. When the mask unit sheet part 220 includes a plurality of first grid sheet parts 223, each of the first grid sheet parts 223 preferably has the same pitch.

另一方面，進一步地，第二柵格片材部225可以沿著第二方向（竪向）延伸形成，第二柵格片材部225以直綫形態形成，其兩端可以連接到邊緣片材部221。第一柵格片材部223和第二柵格片材部225可以彼此垂直交叉。當遮罩單元片材部220包括多個第二柵格片材部225時，各個第二柵格片材部225間宜具有相同的間距。On the other hand, further, the second grid sheet portion 225 may be formed to extend along the second direction (vertical direction), and the second grid sheet portion 225 may be formed in a linear form, and its two ends may be connected to the edge sheet.部221. The first grid sheet part 223 and the second grid sheet part 225 may perpendicularly cross each other. When the mask unit sheet portion 220 includes a plurality of second grid sheet portions 225, each second grid sheet portion 225 preferably has the same spacing.

另一方面，第一柵格片材部223之間的間距和第二柵格片材部225之間的間距可根據遮罩單元C的尺寸而相同或不同。On the other hand, the spacing between the first grid sheet parts 223 and the spacing between the second grid sheet parts 225 may be the same or different according to the size of the mask unit C.

第一柵格片材部223及第二柵格片材部225雖然具有薄膜形態的薄的厚度，但是垂直於長度方向的截面的形狀可以是諸如矩形、梯形的四邊形形狀、三角形形狀等，邊、角的一部分也可以形成為圓形。截面形狀可以在雷射劃綫、蝕刻等過程中進行調節。Although the first grid sheet portion 223 and the second grid sheet portion 225 have a thin thickness in the form of a thin film, the shape of the cross section perpendicular to the length direction may be a rectangle, a trapezoidal quadrilateral shape, a triangular shape, etc. , A part of the corner can also be formed into a round shape. The cross-sectional shape can be adjusted during laser scribing, etching, etc.

邊緣框架部210的厚度可以大於遮罩單元片材部220的厚度。由於邊緣框架部210負責框架200的整體剛性，因而可以以數mm至數cm的厚度形成。The thickness of the edge frame part 210 may be greater than the thickness of the mask unit sheet part 220. Since the edge frame part 210 is responsible for the overall rigidity of the frame 200, it can be formed with a thickness of several mm to several cm.

就遮罩單元片材部220而言，實質上製造厚片材的工藝困難，若過厚，則在OLED像素沉積工藝中有機物源600（參照圖19）會堵塞透過遮罩100的路徑。相反，若過薄，則有可能難以確保足以支撐遮罩100的剛性。由此，遮罩單元片材部220優選比邊緣框架部210的厚度薄，但比遮罩100更厚。遮罩單元片材部220的厚度可以約為0.1mm至1mm。並且，第一柵格片材部223、第二柵格片材部225的寬度可以約為1~5mm。As for the mask unit sheet portion 220, the process of manufacturing a thick sheet is substantially difficult. If it is too thick, the organic source 600 (refer to FIG. 19) will block the path through the mask 100 during the OLED pixel deposition process. On the contrary, if it is too thin, it may be difficult to ensure sufficient rigidity to support the mask 100. Therefore, the mask unit sheet part 220 is preferably thinner than the thickness of the edge frame part 210 but thicker than the mask 100. The thickness of the mask unit sheet part 220 may be approximately 0.1 mm to 1 mm. In addition, the width of the first grid sheet portion 223 and the second grid sheet portion 225 may be about 1 to 5 mm.

在平面狀片材中，除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外，可以提供多個遮罩單元區域CR（CR11~CR56）。從另一個角度來說，遮罩單元區域CR可以是指在邊緣框架部210的中空區域R中，除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外的空白區域。In the planar sheet, in addition to the area occupied by the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225, a plurality of mask unit regions CR (CR11~CR56) may be provided . From another perspective, the mask unit area CR may refer to the hollow area R of the edge frame portion 210, except for the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225. Blank area outside the occupied area.

隨著該遮罩單元區域CR與遮罩100的單元C對應，實質上可以用作藉由遮罩圖案P沉積OLED像素的通道。如前所述，一個遮罩單元C與智慧手機等的一個顯示器對應。一個遮罩100中可以形成有用於構成一個單元C的遮罩圖案P。或者，一個遮罩100具備多個單元C且各個單元C可以與框架200的各個單元區域CR對應，但是為了精確地對準遮罩100，需要避免大面積的遮罩100，優選為具備一個單元C的小面積遮罩100。或者，也可以是具備多個單元C的一個遮罩100與遮罩200的一個單元區域CR對應。此時，為了精確地對準，可以考慮對應具有2-3個左右之少量的單元C的遮罩100。As the mask cell area CR corresponds to the cell C of the mask 100, it can essentially be used as a channel for depositing OLED pixels through the mask pattern P. As described above, one mask unit C corresponds to one display of a smartphone or the like. A mask pattern P for forming a cell C may be formed in one mask 100. Alternatively, one mask 100 has multiple cells C and each cell C can correspond to each cell area CR of the frame 200, but in order to accurately align the mask 100, it is necessary to avoid a large area of the mask 100, and preferably has one cell C's small area mask 100. Alternatively, one mask 100 including a plurality of cells C may correspond to one cell region CR of the mask 200. At this time, in order to accurately align, a mask 100 corresponding to a small number of cells C of about 2-3 may be considered.

遮罩200具備多個遮罩單元區域CR，可以將各個遮罩100以各個遮罩單元C與各個遮罩單元區域CR分別對應的方式附著。各個遮罩100可以包括形成有多個遮罩圖案P的遮罩單元C及遮罩單元C周邊的虛設部（對應於除了單元C以外的遮罩膜110部分）。虛設部（dummy）可以只包括遮罩膜110，或者可以包括形成有與遮罩圖案P類似形態的規定的虛設部圖案的遮罩膜110。遮罩單元C與框架200的遮罩單元區域CR對應，虛設部的一部分或者全部可以附著於框架200（遮罩單元片材部220）。由此，遮罩100和框架200可以形成一體式結構。The mask 200 includes a plurality of mask unit regions CR, and each mask 100 can be attached such that each mask unit C corresponds to each mask unit region CR. Each mask 100 may include a mask unit C formed with a plurality of mask patterns P and a dummy part around the mask unit C (corresponding to the part of the mask film 110 other than the unit C). The dummy may include only the mask film 110, or may include the mask film 110 formed with a predetermined dummy pattern similar to the mask pattern P. The mask unit C corresponds to the mask unit region CR of the frame 200, and a part or all of the dummy part may be attached to the frame 200 (the mask unit sheet part 220). Thus, the mask 100 and the frame 200 may form an integrated structure.

另一方面，根據另一實施例，框架不是以將遮罩單元片材部220附著於邊緣框架部210的方式製造，而是可以使用在邊緣框架部210的中空區域R部分直接形成與邊緣框架部210成為一體的柵格框架（相當於柵格片材部223、225）的框架。這種形態的框架也包括至少一個遮罩單元區域CR，可以使遮罩100與遮罩單元區域CR對應，以製造框架一體型遮罩。On the other hand, according to another embodiment, the frame is not manufactured by attaching the mask unit sheet portion 220 to the edge frame portion 210, but can be used in the hollow area R portion of the edge frame portion 210 to be directly formed with the edge frame The part 210 becomes a frame of an integrated grid frame (equivalent to the grid sheet parts 223 and 225). The frame of this form also includes at least one mask unit area CR, and the mask 100 can be made to correspond to the mask unit area CR to manufacture a frame-integrated mask.

以下，對框架一體型遮罩的製造過程進行說明。Hereinafter, the manufacturing process of the frame-integrated mask will be described.

首先，可以提供圖4及圖5中所述的框架200。圖6是示出本發明的一實施例涉及的框架200的製造過程的概略圖。First, the frame 200 described in FIGS. 4 and 5 may be provided. FIG. 6 is a schematic diagram showing a manufacturing process of the frame 200 according to an embodiment of the present invention.

參照圖6（a），提供邊緣框架部210。邊緣框架部210可以是包括中空區域R的方框形狀。6(a), an edge frame part 210 is provided. The edge frame part 210 may be a box shape including a hollow region R.

其次，參照圖6（b），製造遮罩單元片材部220。使用壓延、電鑄或者其他的成膜工藝製造平面狀的片材之後，基於雷射劃綫、蝕刻等去除遮罩單元區域CR部分，從而可以製造 遮罩單元片材部220。本說明書中，以形成6×5的遮罩單元區域CR（CR11~CR56）為例進行說明。可以存在5個第一柵格片材部223與4個第二柵格片材部225。Next, referring to FIG. 6( b ), the mask unit sheet portion 220 is manufactured. After calendering, electroforming, or other film forming processes are used to manufacture a planar sheet, the mask unit region CR is removed based on laser scribing, etching, etc., so that the mask unit sheet portion 220 can be manufactured. In this specification, a 6×5 mask unit area CR (CR11~CR56) is formed as an example for description. There may be five first grid sheet parts 223 and four second grid sheet parts 225.

然後，可以使遮罩單元片材部220與邊緣框架部210對應。在對應的過程中，可以在拉伸F1~F4遮罩單元片材部220的所有側部以使遮罩單元片材部220平坦伸展的狀態下，使邊緣片材部221與邊緣框架部210對應。在一側部也能以多個點（作為圖6（b）的例，1~3點）夾持遮罩單元片材部220並進行拉伸。另一方面，也可以不是所有側部，而是沿著一部分側部方向，拉伸F1、F2遮罩單元片材部220。Then, the mask unit sheet part 220 may be made to correspond to the edge frame part 210. In the corresponding process, the edge sheet portion 221 and the edge frame portion 210 may be stretched on all sides of the F1~F4 mask unit sheet portion 220 to make the mask unit sheet portion 220 stretched flat. correspond. It is also possible to sandwich and stretch the mask unit sheet portion 220 at a plurality of points (as an example of FIG. 6(b), 1 to 3 points) on one side. On the other hand, the F1 and F2 mask unit sheet parts 220 may be stretched along a part of the side portions instead of all sides.

其次，使遮罩單元片材部220與邊緣框架部210對應時，可以將遮罩單元片材部220的邊緣片材部221以焊接W方式附著。優選地，焊接W所有側部，以便遮罩單元片材部220牢固地附著於邊緣框架部210。應當最大限度地接近框架部210的角部側進行焊接W，才能最大限度地減少邊緣框架部210和遮罩單元片材部220之間的翹起空間，並提升黏著性。焊接W部分可以以線（line）或者點（spot）形狀生成，具有與遮罩單元片材部220相同的材料，並可以成為將邊緣框架部210和遮罩單元片材部220連接成一體的媒介。Next, when the mask unit sheet part 220 is made to correspond to the edge frame part 210, the edge sheet part 221 of the mask unit sheet part 220 can be attached by welding W method. Preferably, all sides of W are welded so that the mask unit sheet part 220 is firmly attached to the edge frame part 210. The welding W should be carried out as close to the corner side of the frame part 210 as possible to minimize the warping space between the edge frame part 210 and the mask unit sheet part 220 and improve the adhesion. The welding W part can be generated in a line or spot shape, has the same material as the mask unit sheet part 220, and can be a unit that connects the edge frame part 210 and the mask unit sheet part 220 medium.

圖7是示出本發明的另一實施例涉及的框架的製造過程的概略圖。圖6的實施例首先製造具備遮罩單元區域CR的遮罩單元片材部220，然後附著於邊緣框架部210，而圖7的實施例將平面狀的片材附著於邊緣框架部210後形成遮罩單元區域CR部分。Fig. 7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention. The embodiment of FIG. 6 first manufactures the mask unit sheet portion 220 with the mask unit region CR, and then attaches it to the edge frame portion 210, while the embodiment of FIG. 7 attaches a flat sheet to the edge frame portion 210 to form Mask the CR part of the cell area.

首先，如圖6（a）所示之方法提供包括中空區域R的邊緣框架部210。First, the method shown in FIG. 6(a) provides an edge frame portion 210 including a hollow area R.

其次，參照圖7（a），可以使平面狀的片材（平面狀的遮罩單元片材部220’）與邊緣框架部210對應。遮罩單元片材部220’是還未形成遮罩單元區域CR的平面狀態。在對應過程中，可以在拉伸F1~F4遮罩單元片材部220’的所有側部以使遮罩單元片材部220’平坦伸展狀態下，與邊緣框架部210對應。在一側部也能以多個點（作為圖7（a）的例，1~3點）夾持單元片材部220’並進行拉伸。另一方面，也可以不是所有側部，而是沿著一部分側部方向，拉伸F1、F2遮罩單元片材部220’。Next, referring to Fig. 7(a), a planar sheet (a planar mask unit sheet portion 220') can be made to correspond to the edge frame portion 210. The mask unit sheet portion 220' is in a planar state where the mask unit region CR has not yet been formed. In the corresponding process, all sides of the mask unit sheet portion 220' of F1 to F4 may be stretched to make the mask unit sheet portion 220' flat and stretched to correspond to the edge frame portion 210. It is also possible to sandwich and stretch the unit sheet portion 220' at a plurality of points (as an example of Fig. 7(a), 1 to 3 points) on one side. On the other hand, the F1 and F2 mask unit sheet parts 220' may be stretched along the direction of a part of the sides instead of all sides.

然後，使遮罩單元片材部220’與邊緣框架部210對應時，可以焊接W方式附著遮罩單元片材部220’的邊緣部分。優選地，焊接W所有側部，以便遮罩單元片材部220’牢固地附著於邊緣框架部220。應當最大限度地接近邊緣框架部210的角部側進行焊接W，才能最大限度地減少邊緣框架部210和遮罩單元片材部220’之間的翹起空間，並提升黏著性。焊接W部分可以以線（line）或者點（spot）形狀生成，與遮罩單元片材部220’具有相同材料，並可以成為將邊緣框架部210和遮罩單元片材部220’連接成一體的媒介。Then, when the mask unit sheet portion 220' corresponds to the edge frame portion 210, the edge portion of the mask unit sheet portion 220' can be attached by welding in a W manner. Preferably, all sides of W are welded so that the mask unit sheet part 220' is firmly attached to the edge frame part 220. Welding W should be done as close as possible to the corner side of the edge frame portion 210 to minimize the warping space between the edge frame portion 210 and the mask unit sheet portion 220' and improve adhesion. The welding W part can be generated in the shape of a line or a spot, and has the same material as the mask unit sheet part 220', and can be integrated into the edge frame part 210 and the mask unit sheet part 220' Medium.

其次，參照圖7（b），在平面狀的片材（平面狀的遮罩單元片材部220’）上形成遮罩單元區域CR。基於雷射劃線、蝕刻等去除遮罩單元區域CR部分的片材，從而可以形成遮罩單元區域CR。本說明書中，以形成6×5的遮罩單元區域CR（CR11~CR56）為例進行說明。若形成遮罩單元區域CR，則可以構成遮罩單元片材部220，其中，與邊緣框架部210焊接W的部分成為邊緣片材部221，並且遮罩單元片材部220具備5個第一柵格片材部223與4個第二柵格片材部225。Next, referring to Fig. 7(b), a mask unit region CR is formed on a planar sheet (a planar mask unit sheet portion 220'). The sheet material in the part of the mask unit region CR is removed based on laser scribing, etching, etc., so that the mask unit region CR can be formed. In this specification, a 6×5 mask unit area CR (CR11~CR56) is formed as an example for description. If the mask unit area CR is formed, the mask unit sheet portion 220 can be formed, wherein the portion welded W to the edge frame portion 210 becomes the edge sheet portion 221, and the mask unit sheet portion 220 has five first The grid sheet part 223 and the four second grid sheet parts 225.

圖8是示出現有的用於形成高解析度OLED的遮罩的概略圖。Fig. 8 is a schematic diagram showing a conventional mask for forming a high-resolution OLED.

為實現高解析度的OLED，圖案的尺寸逐漸變小，藉此所使用的遮罩金屬膜的厚度也有必要變薄。如圖8（a）所示，若要實現高解析度的OLED像素6，則應該縮小遮罩10’上的像素間距與像素尺寸（PD->PD'）。另一方面，為了防止因陰影效應導致的OLED像素6的沉積不均勻，有必要使遮罩10’的圖案傾斜地形成14。然而，在約30~50㎛左右厚度T1之較厚的遮罩10’上傾斜地形成圖案14的過程中，由於難以進行與細微像素間距PD'與像素尺寸匹配的圖案化13，因此將成為加工工藝中產率變差的原因。換而言之，為了具有細微的像素間距PD'的同時傾斜地形成圖案14，需要使用較薄厚度的遮罩10’。In order to achieve a high-resolution OLED, the size of the pattern gradually becomes smaller, so the thickness of the mask metal film used must also be thinner. As shown in Fig. 8(a), if a high-resolution OLED pixel 6 is to be realized, the pixel pitch and pixel size (PD->PD') on the mask 10' should be reduced. On the other hand, in order to prevent uneven deposition of the OLED pixels 6 due to the shadow effect, it is necessary to form the pattern 14 of the mask 10' obliquely. However, in the process of obliquely forming the pattern 14 on the thick mask 10' with a thickness T1 of about 30-50㎛, it is difficult to perform patterning 13 that matches the fine pixel pitch PD' and the pixel size, so it becomes a process The reason for the poor yield in the process. In other words, in order to form the pattern 14 obliquely while having a fine pixel pitch PD', it is necessary to use a thinner mask 10'.

特別是，為了實現UHD級別的高解析度，如圖8（b）所示，只有使用約為20μm以下厚度T2之較薄的遮罩10’，才能夠進行細微的圖案化。另一方面，為了實現UHD以上的超高解析度，可以考慮使用具有10μm左右厚度T2的較薄的遮罩10’。In particular, in order to achieve a UHD-level high resolution, as shown in Fig. 8(b), only a thin mask 10' with a thickness T2 of about 20 µm or less can be used for fine patterning. On the other hand, in order to achieve ultra-high resolution above UHD, a thin mask 10' with a thickness T2 of about 10 µm can be considered.

圖9是示出本發明的一實施例涉及的遮罩100的概略圖。FIG. 9 is a schematic diagram showing a mask 100 according to an embodiment of the present invention.

遮罩100可包括形成有多個遮罩圖案P的遮罩單元C與遮罩單元C周邊的虛設部DM。如前所述，可使用基於壓延工藝、電鑄等生成之金屬片材來製造遮罩100，遮罩100上可形成有一個單元C。虛設部DM對應於除了單元C以外的遮罩膜110[遮罩金屬膜110]部分，可以只包括遮罩膜110或可包括形成有與遮罩圖案P相似形態的預定的虛設部圖案的遮罩膜110。虛設部DM與遮罩100的邊緣對應，因此虛設部DM的一部分或者全部可附著於框架200[遮罩單元片材部220]上。The mask 100 may include a mask unit C formed with a plurality of mask patterns P and a dummy part DM around the mask unit C. As mentioned above, the mask 100 can be manufactured using a metal sheet produced based on a rolling process, electroforming, etc., and a cell C can be formed on the mask 100. The dummy part DM corresponds to the mask film 110 [mask metal film 110] except for the cell C, and may include only the mask film 110 or may include a mask formed with a predetermined dummy part pattern similar to the mask pattern P. Shield film 110. The dummy part DM corresponds to the edge of the mask 100, so a part or all of the dummy part DM may be attached to the frame 200 [mask unit sheet part 220].

遮罩圖案P的寬度可以小於40μm，遮罩100的厚度可以約為2~50μm。由於框架200具備多個遮罩單元區域CR（CR11~CR56），因此也可以具有多個遮罩100，該遮罩100具有與各個遮罩單元區域CR（CR11~CR56）分別對應的遮罩單元C（C11~56）。The width of the mask pattern P may be less than 40 μm, and the thickness of the mask 100 may be about 2-50 μm. Since the frame 200 has a plurality of mask unit regions CR (CR11~CR56), it can also have a plurality of masks 100 which have mask units corresponding to each mask unit region CR (CR11~CR56). C (C11~56).

由於遮罩100的一面101是與框架200接觸進行附著的面，因此優選為平坦形狀。該一面101藉由後面所述之平坦化工藝變為平坦的同時可進行鏡面化。遮罩100的另一面102可以與後面所述之模板50的一面相對。Since one surface 101 of the mask 100 is a surface to be attached by contact with the frame 200, it is preferably a flat shape. The one side 101 can be mirrored while being flattened by the planarization process described later. The other side 102 of the mask 100 may be opposite to the side of the template 50 described later.

下面，對製造框架一體型遮罩的一系列工藝進行說明，該工藝在製造遮罩金屬膜110’之後，將其支撐在模板50上以製造遮罩100，且將支撐有遮罩100的模板50裝載於框架200上，並使遮罩100附著於框架200上，藉以製造框架一體型遮罩。Hereinafter, a series of processes for manufacturing a frame-integrated mask will be described. After the mask metal film 110' is manufactured, it is supported on the template 50 to manufacture the mask 100, and the template with the mask 100 will be supported. 50 is mounted on the frame 200, and the mask 100 is attached to the frame 200, thereby manufacturing a frame-integrated mask.

圖10是示出本發明的一實施例涉及的以壓延（rolling）方式製造遮罩金屬膜的過程的概略圖。圖11是示出本發明的另一實施例涉及的以電鑄（electroforming）方式製造遮罩金屬膜的過程的概略圖。FIG. 10 is a schematic diagram showing a process of manufacturing a mask metal film by a rolling method according to an embodiment of the present invention. FIG. 11 is a schematic view showing a process of manufacturing a mask metal film by electroforming according to another embodiment of the present invention.

首先，可以準備遮罩金屬膜110。作為一實施例，可以壓延方式準備遮罩金屬膜110。First, the mask metal film 110 may be prepared. As an example, the mask metal film 110 may be prepared by calendering.

參照圖10（a），可以將基於壓延工藝生成的金屬片材作為遮罩金屬膜110’來使用。基於壓延工藝制得的金屬片材在製造工藝上厚度為數十至數百μm。如前面所述的圖8中，為了實現UHD級別的高解析度，只有使用厚度為約20μm以下之較薄的遮罩金屬膜110，才能夠進行細微的圖案化，為了實現UHD以上的超高解析度，需要使用厚度為約10μm之較薄的遮罩金屬膜110。然而，由壓延（rolling）工藝生成的遮罩金屬膜110’具有約25~500μm的厚度，因此有必要使厚度變為更薄。Referring to Fig. 10(a), a metal sheet produced based on a rolling process can be used as a mask metal film 110'. The thickness of the metal sheet produced based on the calendering process is tens to hundreds of μm in the manufacturing process. As shown in Figure 8, in order to achieve high resolution at the UHD level, only a thin mask metal film 110 with a thickness of about 20μm or less can be used for fine patterning. In order to achieve ultra-high resolution above UHD The resolution requires the use of a thin mask metal film 110 with a thickness of about 10 μm. However, the mask metal film 110' generated by a rolling process has a thickness of about 25 to 500 μm, and therefore it is necessary to make the thickness thinner.

因此，還可以執行對遮罩金屬膜110’一面進行平坦化PS的工藝。在此，平坦化PS是指對遮罩金屬膜110’的一面（上面）進行鏡面化的同時去除遮罩金屬膜110’的上部的一部分以使厚度變薄。平坦化PS可基於CMP（Chemical Mechanical Polishing）方法執行，只要是公知的CMP方法，無需特別限制均可使用。另一方面，可藉由化學濕蝕刻（chemical wet etching）或者乾蝕刻（dry etching）方法來縮減遮罩金屬膜110’的厚度。除此以外，還可以使用使遮罩金屬膜110’的厚度變薄的可平坦化之其他工藝，對其沒有特別限制。Therefore, it is also possible to perform a process of planarizing PS on one side of the mask metal film 110'. Here, the flattening PS means that one surface (upper surface) of the mask metal film 110' is mirror-finished and a part of the upper part of the mask metal film 110' is removed to make the thickness thinner. The planarization PS can be performed based on the CMP (Chemical Mechanical Polishing) method, and as long as it is a well-known CMP method, it can be used without special restrictions. On the other hand, the thickness of the mask metal film 110' can be reduced by chemical wet etching or dry etching. In addition to this, other processes that can be planarized to thin the thickness of the mask metal film 110' can also be used, and there is no particular limitation on it.

在執行平坦化PS的過程中，作為一列，在CMP過程中，可控制遮罩金屬膜110’之上表面的表面粗糙度Ra。優選地，可進行使表面粗糙度進一步減少的鏡面化。或者，作為其他例子，藉由化學濕蝕刻或者乾蝕刻過程進行平坦化PS之後，可追加進行個別的CMP工藝等的拋光工藝，以此來減少表面粗糙度Ra。In the process of performing the planarization PS, as a column, during the CMP process, the surface roughness Ra of the upper surface of the mask metal film 110' can be controlled. Preferably, mirroring can be performed to further reduce the surface roughness. Or, as another example, after the PS is planarized by a chemical wet etching or a dry etching process, a separate polishing process such as a CMP process may be additionally performed to reduce the surface roughness Ra.

如此，可以使遮罩金屬膜110’的厚度減少至約50μm以下。藉此，遮罩金屬膜110的厚度優選約為2μm至50μm，更優選地，厚度可以約為5μm至20μm。然而，並非局限於此。In this way, the thickness of the mask metal film 110' can be reduced to about 50 µm or less. Thereby, the thickness of the mask metal film 110 is preferably about 2 μm to 50 μm, and more preferably, the thickness may be about 5 μm to 20 μm. However, it is not limited to this.

參照圖10（b），其與圖10（a）相同，可藉由減少基於壓延工藝製造的遮罩金屬膜110’的厚度來製造遮罩金屬膜110。惟，遮罩金屬膜110’是在藉由後面所述的模板50上夾設臨時黏合部55以被黏合的狀態下，執行平坦化PS工藝以縮減厚度。Referring to FIG. 10(b), which is the same as FIG. 10(a), the mask metal film 110 can be manufactured by reducing the thickness of the mask metal film 110' manufactured based on the calendering process. However, the mask metal film 110' is in a state of being bonded by interposing a temporary bonding part 55 on the template 50 described later, and performing a planarization PS process to reduce the thickness.

作為其他實施例，可以電鑄方式準備遮罩金屬膜110。As another embodiment, the mask metal film 110 may be prepared by electroforming.

參照圖11（a），準備導電性基材21。為了執行電鑄（electroforming），母板的基材21可以是導電性材料。電鑄時，母板可以作為陰極（cathode）電極來使用。Referring to Fig. 11(a), a conductive substrate 21 is prepared. In order to perform electroforming, the base material 21 of the mother board may be a conductive material. In electroforming, the mother board can be used as a cathode electrode.

作為導電性材料，金屬可以在表面生成金屬氧化物，可以在製造金屬過程中流入有雜質，多晶矽基材可以存在夾雜物或者晶界（Grain Boundary），導電性高分子基材含有雜質的可能性高，且強度、耐酸性等可能脆弱。將諸如金屬氧化物、雜質、夾雜物、晶界等的妨礙在母板（或者陰極）表面均勻形成電場的要素稱為”缺陷”（Defect）。由於缺陷（Defect），無法對上述材料的陰極施加均勻電場，從而可使部分鍍膜110（遮罩金屬膜110）不均勻地形成。As a conductive material, metals can generate metal oxides on the surface, impurities can flow into the metal during the manufacturing process, polysilicon substrates can have inclusions or grain boundaries, and conductive polymer substrates may contain impurities. High, and may be weak in strength and acid resistance. Elements such as metal oxides, impurities, inclusions, and grain boundaries that hinder the uniform formation of an electric field on the surface of the mother board (or cathode) are called "defects". Due to a defect, a uniform electric field cannot be applied to the cathode of the above-mentioned material, so that a part of the plating film 110 (the mask metal film 110) may be formed unevenly.

在實現UHD級別以上的超高畫質像素中，鍍膜及鍍膜圖案（遮罩圖案P）的不均勻，有可能對形成像素帶來不良影響。例如，目前QHD畫質的情況為500~600 PPI（pixel per inch），像素尺寸達到約30~50㎛，4K UHD、8K UHD高畫質的情況具有比前者高的~860 PPI、~1600 PPI等的解析度。直接適用於VR機器上的微顯示器或者***到VR機器而使用的微顯示器以約2000 PPI以上級別的超高畫質為目標，像素的尺寸約為5~10μm。適用於其中的FMM、陰影遮罩的圖案寬度可以形成為數μm至數十μm尺寸，優選小於30μm的尺寸，因此數μm尺寸的缺陷也是在遮罩的圖案尺寸中佔據很大比重的尺寸。另一方面，為了去除上述材料的陰極的缺陷，可以進行用於去除金屬氧化物、雜質等的附加的工藝，該過程中有可能又引發陰極材料被蝕刻等的其他缺陷。In the ultra-high image quality pixels above the UHD level, the unevenness of the coating and the coating pattern (mask pattern P) may adversely affect the formation of pixels. For example, the current QHD image quality is 500~600 PPI (pixel per inch), and the pixel size is about 30~50㎛. The high image quality of 4K UHD and 8K UHD has ~860 PPI and ~1600 PPI higher than the former. And other resolutions. The microdisplay directly applicable to the microdisplay on the VR machine or the microdisplay used when inserted into the VR machine aims at the ultra-high image quality above about 2000 PPI, and the pixel size is about 5~10μm. The pattern width of the FMM and shadow mask suitable for it can be formed into a size of several μm to several tens of μm, preferably less than 30 μm. Therefore, defects of a few μm size are also a size that occupies a large proportion of the pattern size of the mask. On the other hand, in order to remove the defects of the cathode material of the above-mentioned materials, additional processes for removing metal oxides, impurities, etc. may be performed, which may cause other defects such as etching of the cathode material.

因此，本發明可以使用單晶材料的母板（或者陰極）。特別是，優選為單晶矽材料。為具有導電性，可以對單晶矽材料的母板進行1019 /cm3 以上的高濃度摻雜。摻雜可以對整個母板進行，也可以僅對母板的表面部分進行。Therefore, the present invention can use a mother board (or cathode) of a single crystal material. In particular, it is preferably a single crystal silicon material. In order to have conductivity, a high concentration of 10 19 /cm 3 or more can be doped to the mother board of single crystal silicon material. Doping can be performed on the entire motherboard or only on the surface of the motherboard.

另一方面，單晶材料可使用Ti、Cu、Ag等金屬；GaN、SiC、GaAs、GaP、AlN、InN、InP、Ge等半導體；石墨（graphite）、石墨烯（graphene）等碳材料；包含CH3 NH3 PbCl3 、CH3 NH3 PbBr3 、CH3 NH3 PbI3 、SrTiO3 等之鈣鈦礦（perovskite）結構等超導電體用單晶陶瓷；飛行器零部件用單晶超耐熱合金等。金屬、碳材料基本上是導電性材料。對於半導體材料情形而言，為了具有導電性，可執行1019 /cm3 以上的高濃度摻雜。其他材料可藉由執行摻雜或形成氧空位（oxygen vacancy）等來形成導電性。摻雜可對母板的整體上進行，亦可僅對母板的表面部分進行。On the other hand, single crystal materials can use Ti, Cu, Ag and other metals; GaN, SiC, GaAs, GaP, AlN, InN, InP, Ge and other semiconductors; graphite (graphite), graphene (graphene) and other carbon materials; including superconductor CH 3 NH 3 PbCl 3, CH 3 NH 3 PbBr 3, CH 3 NH 3 PbI 3, SrTiO 3 , etc. perovskite (Transition of perovskite) single crystal ceramic structure; aircraft single crystal superalloy components with Wait. Metals and carbon materials are basically conductive materials. In the case of semiconductor materials, in order to have conductivity, high concentration doping of 10 19 /cm 3 or more can be performed. Other materials can be made conductive by performing doping or forming oxygen vacancy. The doping can be performed on the entire motherboard or only on the surface of the motherboard.

單晶材料由於沒有缺陷，電鑄時在表面全部形成均勻的電場，因此可生成均勻的鍍膜110。藉由均勻鍍膜而製成之框架一體型遮罩100、200可以進一步改善OLED像素的畫質水準。並且，由於無需進行去除、消除缺陷的附加工藝，可降低工藝費用，並提高生產性。Since the single crystal material has no defects, a uniform electric field is formed on the entire surface during electroforming, so that a uniform plating film 110 can be formed. The frame-integrated masks 100 and 200 made by uniform coating can further improve the image quality level of OLED pixels. Moreover, since there is no need to perform additional processes for removing and eliminating defects, process costs can be reduced and productivity can be improved.

再次參照圖10（a），其次，將導電性基材21作為母板[陰極（Cathode Body）]來使用，且使陽極（未圖示）相隔開地佈置，並可在導電性基材21上基於電鑄形成鍍膜110[或者遮罩金屬膜110]。鍍膜110可形成於導電性基材21的露出的上表面與側面，該導電性基材21與陽極相對佈置且可作用有電場。不僅是導電性基材21的側面，就連導電性基材21的下表面的一部分上也可以形成有鍍膜110。10(a) again, secondly, the conductive substrate 21 is used as a mother board [cathode (Cathode Body)], and anodes (not shown) are arranged separately, and can be placed on the conductive substrate 21 The plating film 110 [or the mask metal film 110] is formed on the basis of electroforming. The plating film 110 may be formed on the exposed upper surface and side surface of the conductive substrate 21, which is arranged opposite to the anode and can act on an electric field. The plating film 110 may be formed not only on the side surface of the conductive substrate 21 but also on a part of the lower surface of the conductive substrate 21.

其次，用雷射剪切D鍍膜110的邊緣部分或在鍍膜110上部形成光阻層，可以僅對露出之部分鍍膜110進行蝕刻並去除（D）。藉此，如圖10（b）所示，可以從導電性基材21分離鍍膜110。Secondly, by cutting the edge portion of the D coating film 110 with a laser or forming a photoresist layer on the top of the coating film 110, only the exposed part of the coating film 110 can be etched and removed (D). Thereby, as shown in FIG. 10( b ), the plating film 110 can be separated from the conductive base 21.

另一方面，從導電性基材21分離鍍膜110之前，可進行熱處理H。本發明的特徵在於，在降低遮罩100的熱膨脹係數的同時，為防止遮罩100及遮罩圖案P因熱發生變形，從導電性基材21[或者母板、陰極]分離鍍膜110之前進行熱處理H。熱處理可在300℃至800℃的溫度下進行。On the other hand, before separating the plating film 110 from the conductive substrate 21, a heat treatment H may be performed. The present invention is characterized in that while reducing the coefficient of thermal expansion of the mask 100, in order to prevent the mask 100 and the mask pattern P from being deformed by heat, it is performed before separating the coating film 110 from the conductive substrate 21 [or mother board, cathode] Heat treatment H. The heat treatment can be performed at a temperature of 300°C to 800°C.

通常，相比基於壓延生成的恒範鋼薄板，基於電鑄生成的恒範鋼薄板的熱膨脹係數更高。因此，可藉由對恒範鋼薄板進行熱處理，以降低熱膨脹係數，但該熱處理過程中恒範鋼薄板會產生剝離、變形等。這是因為，由於僅對恒範鋼薄板進行熱處理或對僅在導電性基材21的上表面上臨時附著之恒範鋼薄板進行熱處理所產生之現象。然而，本發明中，不僅在導電性基材21的上表面而且還在側面與部分下表面上形成鍍膜110，因此即使進行熱處理H也不會發生剝離、變形等。換而言之，由於在導電性基材21與鍍膜110緊密地附著的狀態下進行熱處理，因此具有能夠防止熱處理引起的剝離、變形等且能夠穩定地進行熱處理之優點。Generally, the Hengfan steel sheet produced by electroforming has a higher thermal expansion coefficient than the Hengfan steel sheet produced by rolling. Therefore, the Hengfan steel sheet can be heat treated to reduce the coefficient of thermal expansion. However, the Hengfan steel sheet may peel off and deform during the heat treatment process. This is because of the phenomenon caused by the heat treatment of only the Hengfan steel sheet or the heat treatment of the Hengfan steel sheet temporarily attached only to the upper surface of the conductive base 21. However, in the present invention, the plating film 110 is formed not only on the upper surface of the conductive base 21 but also on the side and part of the lower surface, so even if the heat treatment H is performed, peeling, deformation, etc. will not occur. In other words, since the heat treatment is performed in a state where the conductive base 21 and the plating film 110 are closely attached, there is an advantage that peeling, deformation, etc. caused by the heat treatment can be prevented and the heat treatment can be stably performed.

由電鑄工藝生成的遮罩金屬膜110的厚度會比壓延工藝生成的遮罩金屬膜110的厚度更薄。藉此，還可以省略為縮減厚度而進行的平坦化PS工藝，但根據鍍敷的遮罩金屬膜110’的表面層的成份，結晶結構/細微結構的不同，蝕刻特性會不同，因此有必要藉由平坦化PS工藝來控制表面特性、厚度。The thickness of the mask metal film 110 generated by the electroforming process may be thinner than the thickness of the mask metal film 110 generated by the calendering process. In this way, the planarization PS process to reduce the thickness can also be omitted. However, depending on the composition of the surface layer of the mask metal film 110' to be plated, the crystalline structure/fine structure, the etching characteristics will be different, so it is necessary The surface characteristics and thickness are controlled by the planarization PS process.

圖12至圖13是示出本發明的一實施例涉及的將遮罩金屬膜110黏合於模板50上並形成遮罩100，以製造遮罩支撐模板的過程的概略圖。FIGS. 12 to 13 are schematic diagrams showing the process of bonding the mask metal film 110 on the template 50 to form the mask 100 to manufacture the mask support template according to an embodiment of the present invention.

參照圖12（a），可提供模板50（template）。模板50是一種遮罩100附著於模板50的一面並以被支撐的狀態移動之媒介。模板50的一面優選為平坦形狀，用以支撐平坦狀的遮罩100並使其移動。中心部50a與遮罩金屬膜110的遮罩單元C對應，邊緣部50b可以與遮罩金屬膜110的虛設部DM對應。模板50是大的平板形狀，其面積可大於遮罩金屬膜110，以使遮罩金屬膜110整體上得到支撐。Referring to Figure 12(a), a template 50 (template) may be provided. The template 50 is a medium in which the mask 100 is attached to one side of the template 50 and moved in a supported state. One surface of the template 50 is preferably a flat shape to support and move the flat mask 100. The central portion 50a corresponds to the mask unit C of the mask metal film 110, and the edge portion 50b may correspond to the dummy portion DM of the mask metal film 110. The template 50 has a large flat plate shape, and its area can be larger than the mask metal film 110 so that the mask metal film 110 is supported as a whole.

模板50優選由透明的材料構成，藉以使遮罩100與框架200對準並附著的過程中便於觀測視覺（vision）等。另一方面，若是透明的材料，則還可以使雷射透過。作為透明的材料，可以使用玻璃（glass）、氧化矽（silica）、耐熱玻璃、石英（quartz）、氧化鋁（Al2 O3 ）、硼矽酸玻璃（borosilicate glass）、氧化鋯（zirconia）等材料。作為一例，模板50可以使用硼矽酸玻璃中具有優秀的耐熱性、化學耐久性、機械強度、透明性等的BOROFLOAT® 33材料。另一方面，BOROFLOAT® 33的熱膨脹係數約為3.3，與恆範鋼遮罩金屬膜110的熱膨脹係數差異小，且具有便於控制遮罩金屬膜110的優點。The template 50 is preferably composed of a transparent material, so that the process of aligning and attaching the mask 100 and the frame 200 is convenient for observation and the like. On the other hand, if it is a transparent material, the laser can also be transmitted through. As a transparent material, glass, silica, heat-resistant glass, quartz, alumina (Al 2 O 3 ), borosilicate glass, zirconia, etc. can be used material. As an example, the template 50 may use the BOROFLOAT ® 33 material which has excellent heat resistance, chemical durability, mechanical strength, transparency, etc. among borosilicate glass. On the other hand, the thermal expansion coefficient of BOROFLOAT ® 33 is about 3.3, which is less different from the thermal expansion coefficient of the Hengfan steel mask metal film 110, and has the advantage of facilitating the control of the mask metal film 110.

另一方面，模板50與遮罩金屬膜110接觸的一面可以是鏡面，以使與遮罩金屬膜110[或者遮罩100]之間的界面之間不產生空隙（air gap）。基於此，模板50的一面的表面粗糙度Ra可以為100nm以下。為了實現表面粗糙度Ra為100nm以下的模板50，模板50可以使用晶圓（wafer）。晶圓（wafer）的表面粗糙度Ra約為10nm，且市面上的產品較多，表面處理工藝已被習知，故可作為模板50使用。模板50的表面粗糙度Ra是nm級，因此不存在空隙AG或幾乎沒有空隙AG，藉以容易基於雷射焊接生成焊接焊珠WB，故對遮罩圖案P的對準誤差不產生影響。On the other hand, the contact surface of the template 50 and the mask metal film 110 may be a mirror surface, so that no air gap is generated between the interface with the mask metal film 110 [or the mask 100]. Based on this, the surface roughness Ra of one side of the template 50 may be 100 nm or less. In order to realize the template 50 with a surface roughness Ra of 100 nm or less, the template 50 may use a wafer. The surface roughness Ra of the wafer (wafer) is about 10 nm, and there are many products on the market, and the surface treatment process has been known, so it can be used as a template 50. The surface roughness Ra of the template 50 is on the nm level, so there is no gap AG or almost no gap AG, so that welding beads WB are easily generated based on laser welding, so the alignment error of the mask pattern P is not affected.

模板50上可形成有雷射貫穿孔51，以使從模板50的上部照射的雷射L到達遮罩100的焊接部（執行焊接的區域）。雷射貫穿孔51可與焊接部的位置及個數對應地形成於模板50上。焊接部可以規定的間隔在遮罩100的邊緣或虛設部DM的部分上佈置多個，因此雷射貫穿孔51亦可以與其對應且相隔規定間隔地形成多個。作為一例，焊接部在遮罩100的兩側（左側/右側）虛設部DM的部分以規定間隔佈置多個，因此雷射貫穿孔51亦可以在模板50的兩側（左側/右側）以規定間隔形成多個。The template 50 may be formed with a laser through hole 51 so that the laser L irradiated from the upper portion of the template 50 reaches the welding part (the area where welding is performed) of the mask 100. The laser through holes 51 may be formed on the template 50 in accordance with the positions and the number of welding parts. A plurality of welding parts may be arranged on the edge of the mask 100 or the part of the dummy part DM at a predetermined interval. Therefore, the laser through-holes 51 may also be formed in plural corresponding to it and at a predetermined interval. As an example, a plurality of welding parts are arranged at predetermined intervals on both sides (left/right) of the mask 100 and the dummy part DM. Therefore, the laser through holes 51 may also be defined on both sides (left/right) of the template 50 Multiple intervals are formed.

雷射貫穿孔51並非一定與焊接部的位置及個數對應。例如，亦可以僅對雷射貫穿孔51中的一部分照射雷射L以進行焊接。另一方面，不與焊接部對應的雷射貫穿孔51中一部分在對準遮罩100與模板50時亦可代替對準標記而使用。若模板50的材料對雷射L光透明，則亦可以不形成雷射貫穿孔51。The laser through-hole 51 does not necessarily correspond to the position and the number of welded parts. For example, only a part of the laser through hole 51 may be irradiated with the laser L for welding. On the other hand, a part of the laser through-hole 51 that does not correspond to the welding portion may be used instead of the alignment mark when aligning the mask 100 and the template 50. If the material of the template 50 is transparent to the laser light L, the laser through hole 51 may not be formed.

模板50的一面上可形成有臨時黏合部55。在遮罩100附著於框架200之前，臨時黏合部55使遮罩100[或者遮罩金屬膜110]臨時黏合於模板50的一面並被支撐在模板50上。A temporary bonding part 55 may be formed on one side of the template 50. Before the mask 100 is attached to the frame 200, the temporary adhesive part 55 temporarily bonds the mask 100 [or the mask metal film 110] to one side of the template 50 and is supported on the template 50.

臨時黏合部55可使用基於加熱可分離的黏合劑或者黏合片材（thermal release type），基於UV照射可分離的黏合劑或者黏合片材(UV release type)。The temporary adhesive part 55 may use an adhesive or an adhesive sheet (thermal release type) that is separable based on heating, or an adhesive or an adhesive sheet (UV release type) that is separable based on UV irradiation.

作為一例，臨時黏合部55可使用液態蠟（liquid wax）。液態蠟可以使用與在半導體晶圓拋光步驟等中使用的蠟相同的蠟，其種類沒有特別限制。作為用於控制與維持力有關的黏著力、耐衝擊性等之樹脂成份，液態蠟主要包含丙烯酸、醋酸乙烯酯、尼龍及各種聚合物等物質及溶劑。作為一例，臨時黏合部55作為樹脂成份可使用丙烯腈-丁二烯橡膠（ABR，Acrylonitrile butadiene rubber）且作為溶劑成份可使用含有n-丙醇的SKYLIQUID ABR-4016。液態蠟可使用旋轉塗布形成於臨時黏合部55上。As an example, liquid wax (liquid wax) can be used for the temporary bonding part 55. The liquid wax can be the same wax used in the semiconductor wafer polishing step or the like, and its kind is not particularly limited. As a resin component used to control adhesion, impact resistance, etc. related to maintaining power, liquid wax mainly contains acrylic, vinyl acetate, nylon, various polymers and other substances and solvents. As an example, the temporary adhesive part 55 may use Acrylonitrile butadiene rubber (ABR) as the resin component and SKYLIQUID ABR-4016 containing n-propanol as the solvent component. The liquid wax can be formed on the temporary bonding part 55 by spin coating.

作為液態蠟的臨時黏合部55在高於85℃~100℃的溫度下其黏性變低，而在低於85℃的溫度下黏性變大，一部分像固體一樣變硬，且可以使遮罩金屬膜110’與模板50固定並黏合。Temporary adhesive part 55, which is a liquid wax, has a low viscosity at a temperature higher than 85°C to 100°C, but becomes more viscous at a temperature lower than 85°C, and a part becomes hard like a solid, and can make the The cover metal film 110' is fixed and bonded to the template 50.

其次，參照圖12（b），可以使遮罩金屬膜110’黏合於模板50上。將液態蠟加熱到85℃以上且使遮罩金屬膜110’接觸模板50之後，使遮罩金屬膜110’與模板50通過輥子之間以進行黏合。Next, referring to FIG. 12(b), the mask metal film 110' can be adhered to the template 50. After the liquid wax is heated to 85°C or higher and the mask metal film 110' is brought into contact with the template 50, the mask metal film 110' and the template 50 are passed between the rollers for bonding.

根據一實施例，在約120℃的溫度下對模板50烘焙（baking）60秒，使臨時黏合部55的溶劑氣化，並直接進行遮罩金屬膜的層壓（lamination）工藝。層壓可藉由以下過程執行，即，在一面形成有臨時黏合部55的模板50上裝載遮罩金屬膜110’，並將其通過約100℃的上部輥（roll）與約0℃的下部輥之間。其結果，遮罩金屬膜110’可藉由在模板50上夾設臨時黏合部55與模板50接觸。According to an embodiment, the template 50 is baked at a temperature of about 120° C. for 60 seconds to vaporize the solvent of the temporary bonding portion 55, and the lamination process of the mask metal film is directly performed. The lamination can be performed by the following process, namely, loading the mask metal film 110' on the template 50 with the temporary bonding part 55 formed on one side, and passing it through an upper roll at about 100°C and a lower part at about 0°C Between the rolls. As a result, the mask metal film 110' can be brought into contact with the template 50 by interposing the temporary adhesive portion 55 on the template 50.

圖14是示出本發明的一實施例涉及的臨時黏合部55的放大截面的概略圖。作為又一例，臨時黏合部55可使用熱分離膠帶（thermal release tape）。熱分離膠帶是中間佈置有PET膜等的基膜56，基膜56的兩面佈置有可熱分離的黏著層57a、57b（thermal release adhesive），而黏著層57a、57b的外廓可佈置有分離膜/離型膜58a、58b。其中，基膜56的兩面上佈置的黏著層57a、57b的分離溫度可相互不同。FIG. 14 is a schematic diagram showing an enlarged cross-section of the temporary bonding portion 55 according to an embodiment of the present invention. As another example, thermal release tape may be used for the temporary adhesive part 55. The thermal separation tape is a base film 56 with a PET film or the like arranged in the middle. The two sides of the base film 56 are arranged with thermal release adhesive layers 57a, 57b (thermal release adhesive), and the outer contours of the adhesive layers 57a, 57b can be arranged with separation Film/release film 58a, 58b. Among them, the separation temperature of the adhesive layers 57a and 57b arranged on both sides of the base film 56 may be different from each other.

根據一實施例，在去除分離膜/離型膜58a、58b的狀態下，熱分離膠帶的下表面[第二黏著層57b]黏合於模板50上，熱分離膠帶的上表面[第一黏著層57a]可黏合於遮罩金屬膜110’上。第一黏著層57a與第二黏著層57b的分離溫度互不相同，因此在後面所述的圖17中，從遮罩100分離模板50時，隨著對第一黏著層57a加熱，遮罩100可從模板50及臨時黏合部55分離。According to one embodiment, with the separation film/release film 58a, 58b removed, the lower surface of the thermal separation tape [the second adhesive layer 57b] is adhered to the template 50, and the upper surface of the thermal separation tape [the first adhesive layer] 57a] can be bonded to the mask metal film 110'. The separation temperature of the first adhesive layer 57a and the second adhesive layer 57b are different from each other. Therefore, in FIG. 17 described later, when the template 50 is separated from the mask 100, as the first adhesive layer 57a is heated, the mask 100 It can be separated from the template 50 and the temporary bonding part 55.

接著，進一步參照圖12（b），可以使遮罩金屬膜110’的一面平坦化PS。如前所述，經壓延工藝制得之遮罩金屬膜110’可藉由平坦化PS工藝縮減其厚度（110'->110）。另一方面，由電鑄工藝制得之遮罩金屬膜110也可以進行平坦化PS工藝，藉以控制其表面特性、厚度。Next, referring further to Fig. 12(b), one side of the mask metal film 110' can be flattened PS. As mentioned above, the mask metal film 110' produced by the calendering process can be reduced in thickness (110'->110) by the planarization PS process. On the other hand, the mask metal film 110 made by the electroforming process can also be subjected to a planarization PS process to control its surface characteristics and thickness.

藉此，如圖12（c）所示，隨著遮罩金屬膜110’的厚度縮減（110'->110），遮罩金屬膜110的厚度變為約5μm至20μm。Thereby, as shown in FIG. 12(c), as the thickness of the mask metal film 110' decreases (110'->110), the thickness of the mask metal film 110 becomes about 5 μm to 20 μm.

其次，參照圖13（d），在遮罩金屬膜110上部可以進行雷射圖案化LE。在遮罩金屬膜110的上部或下部可以照射雷射以使雷射透過模板50。基於照射雷射之雷射圖案化LE的結果，在遮罩金屬膜110上能夠形成遮罩圖案P，除了遮罩圖案P以外，還可以形成對準圖案、虛設部圖案、防皺圖案等。Next, referring to FIG. 13(d), the laser patterning LE can be performed on the upper part of the mask metal film 110. A laser may be irradiated on the upper or lower part of the masking metal film 110 to make the laser pass through the template 50. Based on the result of the laser patterning LE by irradiating the laser, a mask pattern P can be formed on the mask metal film 110. In addition to the mask pattern P, alignment patterns, dummy patterns, anti-wrinkle patterns, etc. can also be formed.

雖然可以基於雷射圖案化LE使遮罩圖案P具有倒錐形，但並非局限於此。雷射圖案化LE的優點是可藉由簡單的工藝形成具有所需尺寸與分辨率之遮罩圖案P。雷射可具有毫微秒、飛秒、皮秒的脈寬。Although the mask pattern P can have an inverted cone shape based on the laser patterning LE, it is not limited to this. The advantage of the laser patterning LE is that the mask pattern P with the required size and resolution can be formed by a simple process. The laser can have a pulse width of nanoseconds, femtoseconds, and picoseconds.

具有數皮秒以上脈寬的皮秒雷射光束以非熱反應的光化學反應為主，因此具有能夠實現高精密加工的特性。具有數飛秒以上的脈寬的飛秒雷射光束當放大時可生成相當於1012 的兆瓦的輸出，故可以對任意材料進行加工。又，飛秒雷射光束可實現即使雷射不匯聚到一個點上，也能夠使光子能量聚集到一個點上之效果，就是說能夠執行如此精密度高的加工。A picosecond laser beam with a pulse width of several picoseconds or more is dominated by non-thermal photochemical reactions, so it has the characteristics of enabling high-precision processing. A femtosecond laser beam with a pulse width of several femtoseconds or more can generate an output equivalent to 10 12 megawatts when enlarged, so any material can be processed. In addition, the femtosecond laser beam can achieve the effect of focusing the photon energy on one point even if the laser does not converge on one point, that is, it can perform such high-precision processing.

為了使遮罩圖案P整體上具有倒錐形或者錐形，可以沿遮罩金屬膜110的厚度方向位置間歇或連續地照射一種雷射，也可以交替地照射多種雷射。作為一例，為了形成倒錐形之遮罩圖案P，將焦點範圍寬之雷射照射到遮罩金屬膜110內部的上部以除去局部，且可以朝遮罩金屬膜110內部的下部照射焦點範圍漸漸變窄之雷射以除去局部。又，作為一例，可以將具有毫微秒的脈寬之雷射照射到遮罩金屬膜110的上部位置，且將具有飛秒的脈寬之雷射照射到遮罩金屬膜110的的中間位置，並將具有皮秒的脈寬之雷射照射到遮罩金屬膜110之下部位置。In order to make the mask pattern P have an inverted cone or cone as a whole, one type of laser may be irradiated intermittently or continuously along the thickness direction of the mask metal film 110, or a plurality of lasers may be irradiated alternately. As an example, in order to form an inverted cone-shaped mask pattern P, a laser with a wide focus range is irradiated to the upper part of the mask metal film 110 to remove a part, and the focus range can be gradually irradiated toward the lower part of the mask metal film 110 Narrow the laser to remove the part. Also, as an example, a laser with a pulse width of nanoseconds may be irradiated to the upper position of the mask metal film 110, and a laser with a pulse width of femtoseconds may be irradiated to the middle position of the mask metal film 110 , And irradiate a laser with a picosecond pulse width to the position under the mask metal film 110.

另一方面，也可以組合進行雷射圖案化LE與蝕刻工藝以使遮罩圖案P整體上具有倒錐形或者錐形。作為一例，在遮罩金屬膜110上部用光阻劑等形成絕緣部（未圖示）之後，以遮罩金屬膜不被貫穿的程度進行蝕刻且使厚度變薄。蝕刻可以以相對較寬的寬度進行。接著，進行雷射圖案化LE以使遮罩金屬膜110被貫穿。相較於蝕刻，雷射圖案化LE以較窄的寬度進行。因此，進行蝕刻、雷射圖案化LE而被去除的部分會相接，故形成遮罩圖案P。On the other hand, it is also possible to combine the laser patterning LE and the etching process so that the mask pattern P has an inverted cone shape or a cone shape as a whole. As an example, after forming an insulating portion (not shown) with a photoresist or the like on the mask metal film 110, etching is performed to the extent that the mask metal film is not penetrated and the thickness is reduced. The etching can be performed with a relatively wide width. Next, laser patterning LE is performed so that the mask metal film 110 is penetrated. Compared to etching, laser patterning LE is performed with a narrower width. Therefore, the portions removed by etching and laser patterning LE will be in contact with each other, so that the mask pattern P is formed.

其次，參照圖13（e），結束用於支撐遮罩100的模板50之製造。被雷射圖案化LE之遮罩金屬膜110部分構成遮罩圖案P，可以製造形成有多個遮罩圖案P之遮罩100。Next, referring to FIG. 13(e), the manufacture of the template 50 for supporting the mask 100 is finished. The mask metal film 110 part of the laser-patterned LE constitutes the mask pattern P, and the mask 100 formed with a plurality of mask patterns P can be manufactured.

由於框架200具備多個遮罩單元區域CR（CR11~CR56），因此具有與各個遮罩單元區域CR（CR11~CR56）分別對應的遮罩單元C（C11~56）之遮罩100也可以是多個。另一方面，可具備分別支撐多個遮罩100的多個模板50。Since the frame 200 has a plurality of mask unit regions CR (CR11~CR56), the mask 100 with mask units C (C11~56) corresponding to each mask unit region CR (CR11~CR56) can also be Multiple. On the other hand, a plurality of templates 50 that respectively support a plurality of masks 100 may be provided.

圖15是示出本發明的一實施例涉及的將遮罩支撐模板裝載於框架上的過程的概略圖。15 is a schematic diagram showing a process of mounting a mask support template on a frame according to an embodiment of the present invention.

參照圖15，模板50可藉由真空吸盤90被移送。用真空吸盤90吸附黏合有遮罩100的模板50的面之相反面並進行移送。真空吸盤90可以與向x、y、z、θ軸移動的移動手段（未圖示）連接。另一方面，真空吸盤90可連接於吸附模板50的狀態下進行翻轉（flip）之翻轉手段（未圖示）。如圖15的（b）所示，真空吸盤90即使在吸附模板50並使其翻轉之後向框架200移送模板50的過程中，也不會影響遮罩100的黏合狀態與對準狀態。Referring to FIG. 15, the template 50 can be transferred by the vacuum suction cup 90. The surface opposite to the surface of the template 50 to which the mask 100 is bonded is sucked and transferred by the vacuum chuck 90. The vacuum chuck 90 can be connected to a moving means (not shown) that moves to the x, y, z, and θ axes. On the other hand, the vacuum chuck 90 may be a flipping means (not shown) for flipping while being connected to the suction template 50. As shown in (b) of FIG. 15, the vacuum chuck 90 does not affect the adhesion state and the alignment state of the mask 100 even during the process of transferring the template 50 to the frame 200 after suctioning and turning over the template 50.

圖16是示出本發明一實施例涉及的將模板裝載於框架上以使遮罩與框架的單元區域對應的狀態的概略圖。圖16雖示出將一個遮罩100與單元區域CR對應/附著的例子，但也可以進行將多個遮罩100同時與所有單元區域CR分別對應以使遮罩100附著於框架200上的過程。此時，可具有用於分別支撐多個遮罩100的多個模板50。16 is a schematic view showing a state in which a template is mounted on a frame so that a mask corresponds to a unit area of the frame according to an embodiment of the present invention. Although FIG. 16 shows an example in which one mask 100 is associated with/attached to the cell region CR, a process of attaching a plurality of masks 100 to all the cell regions CR at the same time to attach the mask 100 to the frame 200 may also be performed. . At this time, there may be a plurality of templates 50 for supporting a plurality of masks 100 respectively.

其次，參照圖16，可以使遮罩100與框架200的一個遮罩單元區域CR對應。可藉由將模板50裝載於框架200[或者遮罩單元片材部220]上來實現遮罩100與遮罩單元區域CR的對應。控制模板50/真空吸盤90的位置的同時通過顯微鏡觀察遮罩100是否與遮罩單元區域CR對應。由於模板50擠壓遮罩100，因此遮罩100與框架200可緊密地抵接。Next, referring to FIG. 16, the mask 100 can be made to correspond to one mask unit region CR of the frame 200. The correspondence between the mask 100 and the mask unit region CR can be realized by loading the template 50 on the frame 200 [or the mask unit sheet part 220]. While controlling the position of the template 50/vacuum chuck 90, it is observed through a microscope whether the mask 100 corresponds to the mask unit area CR. Since the template 50 presses the mask 100, the mask 100 and the frame 200 can abut closely.

另一方面，在框架200下部亦可以佈置下部支撐體70。下部支撐體70具有可進入框架邊緣部210的中空區域R內部的尺寸且具有平坦的形狀。另一方面，下部支撐體70的上面亦可形成有與遮罩單元片材部220的形狀對應的規定支撐槽（未圖示）。此時，邊緣片材部221、第一柵格片材部223及第二柵格片材部225***支撐槽內，藉以使遮罩單元片材部220更好地固定。On the other hand, a lower support 70 may also be arranged at the lower part of the frame 200. The lower support body 70 has a size that can enter the hollow region R of the frame edge portion 210 and has a flat shape. On the other hand, a predetermined support groove (not shown) corresponding to the shape of the mask unit sheet portion 220 may be formed on the upper surface of the lower support body 70. At this time, the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 are inserted into the supporting groove, so as to better fix the mask unit sheet portion 220.

下部支撐體70可擠壓與遮罩100接觸的遮罩單元區域CR的相反面。即，下部支撐體70沿上部方向支撐遮罩單元片材部220，藉以防止遮罩100的附著過程中遮罩單元片材部220向下部下垂。與此同時，下部支撐體70與模板50以相互相反的方向擠壓遮罩100的邊緣部分及框架200[或者遮罩單元片材部220]，故不會破壞遮罩100的對準狀態並使其保持對準。The lower support body 70 may press the opposite surface of the mask unit region CR that is in contact with the mask 100. That is, the lower support body 70 supports the mask unit sheet portion 220 in the upper direction, thereby preventing the mask unit sheet portion 220 from hanging downward during the attaching process of the mask 100. At the same time, the lower support 70 and the template 50 squeeze the edge portion of the mask 100 and the frame 200 [or the mask unit sheet portion 220] in opposite directions, so the alignment state of the mask 100 will not be damaged and Keep it aligned.

如此，僅藉由在模板50上附著遮罩100且將模板50裝載於框架200上就可以完成遮罩100與框架200的遮罩單元區域CR對應的過程，此過程不會對遮罩100施加任何拉伸力。In this way, only by attaching the mask 100 to the template 50 and loading the template 50 on the frame 200, the corresponding process of the mask 100 and the mask unit area CR of the frame 200 can be completed. This process does not apply to the mask 100 Any stretching force.

接著，向遮罩100照射雷射L，以使遮罩100藉由雷射焊接附著於框架200。被雷射焊接的遮罩的焊接部部分上生成焊接焊珠WB，焊接焊珠WB可具有與遮罩100/框架200相同的材料且與遮罩100/框架200連接成一體。Next, the laser L is irradiated to the mask 100 so that the mask 100 is attached to the frame 200 by laser welding. A welding bead WB is generated on the welding part of the mask to be laser-welded, and the welding bead WB may have the same material as the mask 100/frame 200 and be integrated with the mask 100/frame 200.

圖17是示出本發明的一實施例涉及的將遮罩100附著於框架200上之後分離遮罩100與模板50的過程的概略圖。FIG. 17 is a schematic diagram showing a process of separating the mask 100 and the template 50 after attaching the mask 100 to the frame 200 according to an embodiment of the present invention.

參照圖17，將遮罩100附著於框架200之後，可分離（debonding）遮罩100與模板50。遮罩100與模板50之間的分離可藉由對臨時黏合部55進行加熱ET、化學處理CM、施加超聲波US、施加UV中的至少一個來實現。由於遮罩100保持與框架200附著的狀態，因此可以只抬起模板50。作為一例，若施加比85℃~100℃高的熱ET，則臨時黏合部55的黏性下降，且遮罩100與模板50的黏著力邊弱，故可以分離遮罩100與模板50。作為其他例子，將臨時黏合部55浸漬CM於IPA、丙酮、乙醇等化學物質中，藉以由溶解、去除臨時黏合部55等方式分離遮罩100與模板50。作為又一例，若施加超聲波US或施加UVUV，則遮罩100與模板50間的黏著力變弱，故可使遮罩100與模板50分離。Referring to FIG. 17, after the mask 100 is attached to the frame 200, the mask 100 and the template 50 can be separated (debonding). The separation between the mask 100 and the template 50 can be achieved by at least one of heating the temporary bonding portion 55 ET, chemical treatment CM, applying ultrasonic waves US, and applying UV. Since the mask 100 remains attached to the frame 200, only the template 50 can be lifted. As an example, if a heat ET higher than 85° C. to 100° C. is applied, the adhesiveness of the temporary adhesive portion 55 decreases, and the adhesion between the mask 100 and the template 50 is weak, so the mask 100 and the template 50 can be separated. As another example, the temporary bonding part 55 is immersed in a chemical substance such as IPA, acetone, ethanol, etc., and the mask 100 and the template 50 are separated by dissolving and removing the temporary bonding part 55. As another example, if ultrasonic US or UVUV is applied, the adhesive force between the mask 100 and the template 50 becomes weak, so the mask 100 and the template 50 can be separated.

進一步而言，由於使遮罩100與模板50黏合的臨時黏合部55是TBDB黏合材料（temporary bonding & debonding adhesive），故可以使用各種分離（debonding）方法。Furthermore, since the temporary bonding part 55 for bonding the mask 100 and the template 50 is a TBDB bonding material (temporary bonding & debonding adhesive), various debonding methods can be used.

作為一例，可使用基於化學處理CM的溶劑剝離（Solvent Debonding）方法。藉由溶劑（solvent）的滲透導致臨時黏合部55溶解以實現剝離。此時，由於遮罩100上形成有圖案P，因此溶劑將通過遮罩圖案P及遮罩100與模板50間的界面滲透。溶劑剝離可在常溫（room temperature）下進行且無需其他的複雜剝離設備，故相比於其他剝離方法具有經濟性。As an example, a solvent stripping (Solvent Debonding) method based on chemical treatment CM can be used. The penetration of the solvent causes the temporary adhesive part 55 to dissolve to achieve peeling. At this time, since the pattern P is formed on the mask 100, the solvent will penetrate through the mask pattern P and the interface between the mask 100 and the template 50. Solvent stripping can be performed at room temperature and does not require other complicated stripping equipment, so it is economical compared to other stripping methods.

作為又一例，可使用基於加熱ET的熱剝離（Heat Debonding）方法。用高溫的熱來誘導臨時黏合部55分解，若遮罩100與模板50間的黏著力減弱，則可以向上下方向或者左右方向進行剝離。As another example, a heat debonding (Heat Debonding) method based on heating ET can be used. The high-temperature heat induces the decomposition of the temporary adhesive portion 55, and if the adhesive force between the mask 100 and the template 50 is weakened, the peeling can be performed in the up and down direction or the left and right direction.

作為又一例，可使用基於加熱ET、施加UVUV等的剝離黏合劑之剝離（Peelable Adhesive Debonding）方法。若臨時黏合部55是熱分離膠帶，則可藉由剝離黏合劑之剝離方法進行剝離，該方法與熱剝離方法相同，無需在高溫下進行熱處理並無需昂貴的熱處理設備，且工藝相對簡單。As another example, a Peelable Adhesive Debonding method based on heating ET, applying UVUV, etc. can be used. If the temporary adhesive part 55 is a thermal separation tape, it can be peeled off by peeling off the adhesive. This method is the same as the thermal peeling method. It does not require heat treatment at high temperature and does not require expensive heat treatment equipment, and the process is relatively simple.

作為又一例，可以使用基於化學處理CM、施加超聲波US、施加UV等的常溫剝離（Room Temperature Debonding）方法。若對遮罩100或者模板50的一部分（中心部）進行non-sticky處理，則只有邊緣部分藉由臨時黏合部55被黏合。另一方面，剝離時邊緣部分上有溶劑滲透，導致臨時黏合部55被溶解，藉以進行剝離。該方法具有以下優點：在進行黏合與剝離的過程中，除了遮罩100、模板50的邊緣區域以外的剩餘部分不會發生直接損傷或者剝離時由於黏合材料殘渣（residue）引起的缺陷等。另一方面，該方法與熱剝離方法不同，由於剝離時無需進行高溫的熱處理過程，故具有能夠相對減少工藝費用的優點。As another example, a room temperature debonding (Room Temperature Debonding) method based on chemical treatment of CM, application of ultrasonic wave US, application of UV, and the like can be used. If a part (central part) of the mask 100 or the template 50 is subjected to non-sticky processing, only the edge part is bonded by the temporary bonding part 55. On the other hand, there is solvent penetration on the edge portion during peeling, which causes the temporary adhesive portion 55 to be dissolved, thereby performing peeling. This method has the following advantages: during the process of bonding and peeling, the remaining parts except for the edge regions of the mask 100 and the template 50 will not be directly damaged or defects caused by the residue of the bonding material during peeling. On the other hand, this method is different from the thermal peeling method, because it does not require a high-temperature heat treatment process during peeling, it has the advantage of being able to relatively reduce process costs.

圖18是示出本發明的一實施例涉及的將遮罩100附著於框架200上的狀態的概略圖。FIG. 18 is a schematic diagram showing a state where the mask 100 is attached to the frame 200 according to an embodiment of the present invention.

參照圖18，一個遮罩100可附著於框架200的一個單元區域CR上。Referring to FIG. 18, one mask 100 may be attached to one unit area CR of the frame 200.

由於框架200的遮罩單元片材部220具有薄的厚度，因此在對遮罩100施加拉伸力的狀態下，附著於遮罩單元片材部220時，遮罩100中殘存的拉伸力作用於遮罩單元片材部220及遮罩單元區域CR，有可能使它們變形。因此，應該在對遮罩100不施加拉伸力的狀態下，將遮罩100附著於遮罩單元片材部220。本發明單單藉由在模板50上附著遮罩100且將模板50裝載於框架200上就可以完成使遮罩100與框架200的遮罩單元區域CR對應之過程，此過程對遮罩100不施加任何拉伸力。由此，可以防止因施加到遮罩100的拉伸力作為張力（tension）反向作用於框架200而導致框架200（或者遮罩單元片材部220）變形。Since the mask unit sheet portion 220 of the frame 200 has a thin thickness, when the mask 100 is attached to the mask unit sheet portion 220 with a stretching force applied, the stretching force remaining in the mask 100 Acting on the mask unit sheet portion 220 and the mask unit region CR may deform them. Therefore, the mask 100 should be attached to the mask unit sheet portion 220 in a state where no stretching force is applied to the mask 100. The present invention simply attaches the mask 100 to the template 50 and loads the template 50 on the frame 200 to complete the process of making the mask 100 correspond to the mask unit area CR of the frame 200, and this process does not apply to the mask 100 Any stretching force. Thereby, it is possible to prevent the frame 200 (or the mask unit sheet portion 220) from being deformed due to the tensile force applied to the mask 100 acting as tension on the frame 200 in the opposite direction.

現有的圖1的遮罩10包括6個單元C1~C6，因此具有較長的長度，而本發明的遮罩100包括一個單元C，因此具有較短的長度，因此PPA（pixel position accuracy）扭曲的程度會變小。假設包括多個單元C1~C6、…的遮罩10的長度為1m，並且在1m的總長度中發生10μm的PPA誤差，則本發明的遮罩100可以隨著相對長度減小（相當於單元C數量減少）而使上述誤差範圍成為1/n。例如，若本發明的遮罩100長度為100mm，則該長度從現有的遮罩10的1m減小至1/10，因此在100mm的總長度中發生1μm的PPA誤差，使對準誤差顯著下降。The existing mask 10 of FIG. 1 includes 6 cells C1 to C6, and therefore has a relatively long length, while the mask 100 of the present invention includes one cell C, and therefore has a relatively short length, so the pixel position accuracy (PPA) is distorted The degree will become smaller. Assuming that the length of the mask 10 including a plurality of cells C1~C6,... is 1m, and a PPA error of 10μm occurs in the total length of 1m, the mask 100 of the present invention can be reduced with the relative length (equivalent to the unit The number of C decreases) and the above-mentioned error range becomes 1/n. For example, if the length of the mask 100 of the present invention is 100mm, the length is reduced from 1m of the existing mask 10 to 1/10. Therefore, a PPA error of 1μm occurs in the total length of 100mm, which significantly reduces the alignment error .

另一方面，遮罩100具備多個單元C，若即使各個單元C與框架200的各個單元區域CR對應，對準誤差仍處於最小化範圍內，則遮罩100也可以與框架200的多個遮罩單元區域CR對應。或者，具有多個單元C的遮罩100也可以與一個遮罩單元區域CR對應。在這種情況下，考慮到基於對準的工藝時間和生產性，遮罩100宜具備盡可能少量的單元C。On the other hand, the mask 100 is equipped with a plurality of cells C. Even if each cell C corresponds to each cell area CR of the frame 200, the alignment error is still within the minimum range, the mask 100 can also be combined with the multiple cells of the frame 200. The mask unit area CR corresponds. Alternatively, the mask 100 having a plurality of cells C may also correspond to one mask cell region CR. In this case, considering the process time and productivity based on alignment, the mask 100 should have as few cells C as possible.

對於本發明而言，由於只需匹配遮罩100的一個單元C並確認對準狀態即可，因此與同時匹配多個單元C（C1~C6）並需要確認全部對準狀態的現有方法相比，可以顯著縮短製造時間。For the present invention, since only one cell C of the mask 100 needs to be matched and the alignment state is confirmed, it is compared with the existing method that simultaneously matches multiple cells C (C1~C6) and needs to confirm all the alignment states , Can significantly shorten the manufacturing time.

即，本發明的框架一體型遮罩的製造方法藉由將6個遮罩100中包含之各個單元C11~C16分別與一個單元區域CR11~CR16對應並確認各個對準狀態之6次過程，與同時匹配6個單元C1~C6並需要同時確認6個單元C1~C6的對準狀態之現有方法相比，能夠明顯縮短時間。That is, the manufacturing method of the frame-integrated mask of the present invention uses 6 processes of corresponding each cell C11~C16 included in the 6 masks 100 to one cell region CR11~CR16 and confirming the alignment state of each, and Compared with the existing method that matches 6 units C1~C6 at the same time and needs to confirm the alignment status of the 6 units C1~C6, the time can be significantly reduced.

另一方面，在本發明的框架一體型遮罩的製造方法中，使30個遮罩100分別與30個單元區域CR（CR11~CR56）對應並進行對準之30次的過程的產品產率，會明顯高於使分別包括6個單元C1~C6的5個遮罩10（參照圖2（a））與框架20對應並進行對準之5次過程的現有產品的產率。由於在每次對應於6個單元C的區域中對6個單元C1~C6進行對準之現有方法是明顯繁瑣、困難的作業，因此產品產率低。On the other hand, in the manufacturing method of the frame-integrated mask of the present invention, 30 masks 100 correspond to 30 cell regions CR (CR11~CR56) and the product yield rate of the process of alignment 30 times , It will be significantly higher than the yield of the existing product in which 5 masks 10 (refer to FIG. 2(a)) each including 6 cells C1 to C6 correspond to the frame 20 and perform 5 times of alignment. Since the existing method of aligning the 6 cells C1 to C6 in the area corresponding to the 6 cells C at a time is an obviously tedious and difficult operation, the product yield is low.

另一方面，在圖12（b）步驟中，如前所述，基於層壓工藝將遮罩金屬膜110黏合於模板50上時，遮罩金屬膜110上會施加有約100℃的溫度。基於此，遮罩金屬膜110在施加有部分拉伸力的狀態下黏合於模板50上。之後，遮罩100附著於框架200上，若模板50與遮罩100分離，則遮罩100將會收縮預定程度。On the other hand, in the step of FIG. 12(b), as described above, when the mask metal film 110 is bonded to the template 50 based on the lamination process, a temperature of about 100° C. is applied to the mask metal film 110. Based on this, the mask metal film 110 is adhered to the template 50 in a state where a partial tensile force is applied. After that, the mask 100 is attached to the frame 200. If the template 50 is separated from the mask 100, the mask 100 will shrink by a predetermined degree.

當個遮罩100分別附著於與其對應的遮罩單元區域CR之後，使模板50與遮罩100分離時，多個遮罩100沿著相反方向施加收縮的張力，故該力被抵銷，因此在遮罩單元片材部220上不發生變形。例如，在附著於CR11單元區域的遮罩100與附著於CR12單元區域的遮罩100之間的第一柵格片材部223中，向附著於CR11單元區域的遮罩100的右側方向作用的張力與向附著於CR12單元區域的遮罩100的左側方向作用的張力相互抵消。由此，能夠最大限度地降低張力引起的框架200[或者遮罩單元片材部220]變形，從而能夠最大限度地降低遮罩100[或者遮罩圖案P]的對準誤差。When each mask 100 is attached to the corresponding mask unit area CR, when the template 50 is separated from the mask 100, the multiple masks 100 apply contraction tension in opposite directions, so the force is canceled. No deformation occurs in the mask unit sheet portion 220. For example, in the first grid sheet portion 223 between the mask 100 attached to the CR11 cell area and the mask 100 attached to the CR12 cell area, the first grid sheet portion 223 acts on the right side of the mask 100 attached to the CR11 cell area. The tension and the tension acting in the left direction of the mask 100 attached to the CR12 cell area cancel each other out. Thereby, the deformation of the frame 200 [or the mask unit sheet portion 220] caused by tension can be minimized, and the alignment error of the mask 100 [or the mask pattern P] can be minimized.

圖19是示出本發明之一實施例涉及之利用框架一體型遮罩100、200的OLED像素沉積裝置1000的概略圖。FIG. 19 is a schematic diagram showing an OLED pixel deposition apparatus 1000 using frame-integrated masks 100 and 200 according to an embodiment of the present invention.

參照圖19，OLED像素沉積裝置1000包括：磁板300，其容納有磁體310，並且排布有冷卻水管350；沉積源供給部500，其從磁板300的下部供給有機物源600。19, the OLED pixel deposition device 1000 includes a magnetic plate 300 containing a magnet 310 and arranged with cooling water pipes 350; and a deposition source supply part 500 that supplies an organic source 600 from a lower portion of the magnetic plate 300.

磁板300與沉積源供給部500之間可以***有用於沉積有機物源600的玻璃等目標基板900。目標基板900上可以以緊貼或非常接近的方式配置使有機物源600按不同像素沉積的框架一體型遮罩100、200[或者FMM]。磁體310可以產生磁場，並藉由磁場緊貼到目標基板900上。A target substrate 900 such as glass used to deposit the organic matter source 600 may be inserted between the magnetic plate 300 and the deposition source supply part 500. On the target substrate 900, a frame-integrated mask 100, 200 [or FMM] for depositing the organic matter source 600 according to different pixels can be arranged in close or very close manner. The magnet 310 can generate a magnetic field, and is closely attached to the target substrate 900 by the magnetic field.

沉積源供給部500可以往返左右路徑並供給有機物源600，由沉積源供給部500供給的有機物源600可以通過形成於框架一體型遮罩100、200的圖案P並沉積於目標基板900的一側。通過框架一體型遮罩100、200的圖案P後之被沉積的有機物源600，可以用作OLED的像素700。The deposition source supply part 500 can reciprocate left and right paths and supply the organic material source 600. The organic material source 600 supplied by the deposition source supply part 500 can be deposited on one side of the target substrate 900 through the pattern P formed in the frame-integrated mask 100, 200 . The organic material source 600 deposited after the pattern P of the frame-integrated masks 100 and 200 can be used as the pixel 700 of the OLED.

為了防止由於陰影效應（Shadow Effect）發生的像素700的不均勻沉積，框架一體型遮罩100、200的圖案可以傾斜地形成S[或者以錐形S形成]。沿著傾斜表面，在對角綫方向上通過圖案的有機物源600，也可以有助於像素700的形成，因此，能夠整體上厚度均勻地沉積像素700。In order to prevent the uneven deposition of the pixels 700 due to the shadow effect, the pattern of the frame-integrated masks 100 and 200 may be formed obliquely S [or formed in a tapered S]. The organic material source 600 passing through the pattern in the diagonal direction along the inclined surface can also contribute to the formation of the pixel 700, and therefore, the pixel 700 can be deposited with a uniform thickness as a whole.

在高於像素沉積工藝溫度的第一溫度下，遮罩100附著固定於框架200，因此即使提升至用於沉積像素工藝的溫度，也對遮罩圖案P的位置幾乎不構成影響，遮罩100和相鄰的遮罩100之間的PPA能夠保持為不超過3μm。At a first temperature higher than the temperature of the pixel deposition process, the mask 100 is attached and fixed to the frame 200, so even if it is raised to the temperature used for the pixel deposition process, the position of the mask pattern P is hardly affected, and the mask 100 The PPA between the adjacent mask 100 can be kept at no more than 3 μm.

如前所述，本發明列舉了較佳實施例進行圖示和說明，但是不限於上述實施例，在不脫離本發明的精神的範圍內，該技術領域中具有通常知識者能夠進行各種變形和變更。這種變形及變更均落在本發明和所附的申請專利範圍之範圍內。As mentioned above, the present invention exemplifies preferred embodiments for illustration and description, but is not limited to the above-mentioned embodiments. Within the scope not departing from the spirit of the present invention, those with ordinary knowledge in the technical field can make various modifications and change. Such deformations and changes fall within the scope of the present invention and the attached patent application.

10、10’:遮罩 11:遮罩膜 13:圖案化 14:形成圖案 20:框架 50:模板（template） 50a、50b:模板的中心部、邊緣部 51:雷射貫穿孔 55:臨時黏合部 70:下部支撐體 90:真空吸盤 100:遮罩 101、102:遮罩的一面、另一面 110、110’、110”:遮罩膜、遮罩金屬膜 200:框架 210:邊緣框架部 220、220’:遮罩單元片材部 221:邊緣片材部 223:第一柵格片材部 225:第二柵格片材部 300:磁板 310:磁體 350:冷却水管 500:沉積源供給部 600:有機物源 700:像素 900:目標基板 1000:OLED像素沉積裝置 C:單元、遮罩單元 C1~C6、CR11~CR16:單元 CM:化學處理 CR、CR11~CR56:遮罩單元區域 D1~D1''、D2~D2'':距離 DM:虛設部、遮罩虛設部 ET:施加熱 F1~F2:拉伸力 L:雷射 P:遮罩圖案 PD':像素間距 PS:平坦化工藝 R:邊緣框架部的中空區域 T1、T2:厚度 US:施加超聲波 UV:施加UV W:焊接 WB:焊接焊珠 10, 10’: Mask 11: Masking film 13: Patterning 14: Form a pattern 20: frame 50: template (template) 50a, 50b: the center and edge of the template 51: Laser through hole 55: Temporary bonding part 70: Lower support 90: vacuum suction cup 100: Mask 101, 102: one side and the other side of the mask 110, 110’, 110”: mask film, mask metal film 200: frame 210: edge frame 220, 220’: Mask unit sheet part 221: Edge sheet section 223: The first grid sheet part 225: The second grid sheet part 300: magnetic plate 310: Magnet 350: Cooling water pipe 500: Deposition Source Supply Department 600: Organic Source 700: pixels 900: target substrate 1000: OLED pixel deposition device C: unit, mask unit C1~C6, CR11~CR16: unit CM: Chemical treatment CR, CR11~CR56: Mask unit area D1~D1``, D2~D2'': distance DM: dummy part, mask dummy part ET: apply heat F1~F2: Stretching force L: Laser P: Mask pattern PD': pixel pitch PS: planarization process R: The hollow area of the edge frame T1, T2: thickness US: Apply ultrasound UV: apply UV W: welding WB: welding beads

圖1是示出現有的OLED像素沉積用遮罩的概略圖。FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition.

圖2是示出現有的將遮罩附著到框架之過程的概略圖。Fig. 2 is a schematic diagram showing a process of attaching a mask to a frame in the prior art.

圖3是示出在現有的拉伸遮罩的過程中，發生單元之間的對準誤差的概略圖。Fig. 3 is a schematic diagram showing alignment errors between units that occur in the process of stretching a mask in the prior art.

圖4是示出本發明的一實施例涉及的框架一體型遮罩的主視圖與側截面圖。4 is a front view and a side sectional view showing a frame-integrated mask according to an embodiment of the present invention.

圖5是示出本發明的一實施例涉及的框架的主視圖與側截面圖。Fig. 5 is a front view and a side sectional view showing a frame according to an embodiment of the present invention.

圖6是示出本發明的一實施例涉及的框架的製造過程的概略圖。Fig. 6 is a schematic diagram showing a manufacturing process of a frame according to an embodiment of the present invention.

圖7是示出本發明的另一實施例涉及的框架的製造過程的概略圖。Fig. 7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention.

圖8是示出現有的用於形成高解析度OLED的遮罩的概略圖。Fig. 8 is a schematic diagram showing a conventional mask for forming a high-resolution OLED.

圖9是示出本發明的一實施例涉及的遮罩的概略圖。Fig. 9 is a schematic diagram showing a mask according to an embodiment of the present invention.

圖10是示出本發明的一實施例涉及的以壓延（rolling）方式製造遮罩金屬膜之過程的概略圖。FIG. 10 is a schematic diagram showing a process of manufacturing a mask metal film by a rolling method according to an embodiment of the present invention.

圖11是示出本發明的另一實施例涉及的以電鑄（electroforming）方式製造遮罩金屬膜之過程的概略圖。FIG. 11 is a schematic view showing a process of manufacturing a mask metal film by electroforming according to another embodiment of the present invention.

圖12至圖13是示出本發明的一實施例涉及的將遮罩金屬膜黏合於模板上並形成遮罩以製造遮罩支撐模板之過程的概略圖。12 to 13 are schematic diagrams showing a process of bonding a mask metal film on a template and forming a mask to manufacture a mask support template according to an embodiment of the present invention.

圖14是示出本發明的一實施例涉及的臨時黏合部的放大截面的概略圖。Fig. 14 is a schematic diagram showing an enlarged cross-section of a temporary bonding portion according to an embodiment of the present invention.

圖15是示出本發明的一實施例涉及的將遮罩支撐模板裝載於框架上之過程的概略圖。15 is a schematic diagram showing a process of loading a mask support template on a frame according to an embodiment of the present invention.

圖16是示出本發明一實施例涉及的將模板裝載於框架上以使遮罩與框架的單元區域對應之狀態的概略圖。Fig. 16 is a schematic view showing a state in which a template is mounted on a frame so that a mask corresponds to a unit area of the frame according to an embodiment of the present invention.

圖17是示出本發明的一實施例涉及的將遮罩附著於框架上之後分離遮罩與模板之過程的概略圖。FIG. 17 is a schematic diagram showing a process of separating the mask and the template after attaching the mask to the frame according to an embodiment of the present invention.

圖18是示出本發明的一實施例涉及的將遮罩附著於框架上之狀態的概略圖。Fig. 18 is a schematic view showing a state in which a mask is attached to a frame according to an embodiment of the present invention.

圖19是示出本發明的一實施例涉及的利用框架一體型遮罩的OLED像素沉積裝置的概略圖。19 is a schematic diagram showing an OLED pixel deposition apparatus using a frame-integrated mask according to an embodiment of the present invention.

50:模板(template) 50: template

50a:中心部 50a: Center

50b:邊緣部 50b: Edge

51:雷射貫穿孔 51: Laser through hole

55:臨時黏合部 55: Temporary bonding part

100:遮罩 100: Mask

110:遮罩膜 110: Masking film

DM:虛設部 DM: Dummy part

LE:雷射圖案化 LE: Laser patterning

C:單元 C: unit

P:遮罩圖案 P: Mask pattern

Claims (10)

一種OLED像素形成用遮罩的製造方法，其中包括以下步驟： （a）準備遮罩金屬膜；以及 （b）在遮罩金屬膜的一面基於雷射圖案化形成遮罩圖案。A manufacturing method of a mask for forming an OLED pixel, which includes the following steps: (A) Prepare the masking metal film; and (B) A mask pattern is formed based on laser patterning on one side of the mask metal film. 如請求項1之遮罩的製造方法，其中在步驟（b）中，雷射具有毫微秒、飛秒、皮秒中任意一個脈寬。For example, the method for manufacturing a mask of claim 1, wherein in step (b), the laser has a pulse width of any one of nanoseconds, femtoseconds, and picoseconds. 如請求項1之遮罩的製造方法，其中在步驟（b）中，以遮罩金屬膜的厚度方向為基準，在遮罩金屬膜的上部照射焦點範圍寬的雷射，越是靠近遮罩金屬膜的下部使用焦點範圍窄的雷射進行照射，藉以進行雷射圖案化。Such as the method of manufacturing a mask of claim 1, wherein in step (b), based on the thickness direction of the mask metal film, a laser with a wide focus range is irradiated on the upper part of the mask metal film, the closer to the mask The lower part of the metal film is irradiated with a laser with a narrow focus range for laser patterning. 如請求項1之遮罩的製造方法，其中在步驟（b）中，以遮罩金屬膜的厚度方向為基準，以遮罩金屬膜不被貫穿的程度進行蝕刻之後，基於雷射圖案化形成遮罩圖案以使遮罩金屬膜被貫穿。The method for manufacturing a mask as claimed in claim 1, wherein in step (b), taking the thickness direction of the mask metal film as a reference, after etching to the extent that the mask metal film is not penetrated, it is formed based on laser patterning The mask pattern allows the mask metal film to be penetrated. 一種遮罩支撐模板的製造方法，該模板（template）用於支撐OLED像素形成用遮罩並使遮罩與框架對應，其中該製造方法包括以下步驟： （a）準備遮罩金屬膜； （b）將遮罩金屬膜黏合於一面形成有臨時黏合部之模板上；以及 （c）在遮罩金屬膜的一面基於雷射圖案化形成遮罩圖案，以製造遮罩。A manufacturing method of a mask support template, the template is used to support a mask for forming an OLED pixel and make the mask correspond to a frame, wherein the manufacturing method includes the following steps: (A) Prepare the masking metal film; (B) Glue the mask metal film to a template with a temporary bonding part formed on one side; and (C) Form a mask pattern based on laser patterning on one side of the mask metal film to manufacture a mask. 如請求項5之遮罩支撐模板的製造方法，其中在步驟（c）中，雷射具有毫微秒、飛秒、皮秒中任意一個脈寬。For example, the manufacturing method of the mask support template of claim 5, wherein in step (c), the laser has a pulse width of any one of nanoseconds, femtoseconds, and picoseconds. 如請求項5之遮罩支撐模板的製造方法，其中在步驟（c）中，以遮罩金屬膜的厚度方向為基準，在遮罩金屬膜的上部照射焦點範圍寬的雷射，越是靠近遮罩金屬膜的下部使用焦點範圍窄的雷射進行照射，藉以進行雷射圖案化。For example, the manufacturing method of the mask support template of claim 5, wherein in step (c), based on the thickness direction of the mask metal film, a laser with a wide focus range is irradiated on the upper part of the mask metal film, and the closer The lower part of the mask metal film is irradiated with a laser with a narrow focus range, thereby performing laser patterning. 如請求項5之遮罩支撐模板的製造方法，其中在步驟（c）中，以遮罩金屬膜的厚度方向為基準，以遮罩金屬膜不被貫穿的程度進行蝕刻之後，基於雷射圖案化形成遮罩圖案以使遮罩金屬膜被貫穿。For example, the manufacturing method of the mask support template of claim 5, wherein in step (c), the thickness direction of the mask metal film is used as a reference, and the mask metal film is not penetrated after etching is performed based on the laser pattern The mask pattern is formed so that the mask metal film is penetrated. 如請求項5之遮罩支撐模板的製造方法，其中臨時黏合部是基於加熱可分離的黏合劑或者黏合片材，基於照射UV可分離的黏合劑或者黏合片材。For example, the manufacturing method of the mask support template of claim 5, wherein the temporary bonding part is based on a heat-separable adhesive or bonding sheet, and based on a UV-irradiated adhesive or bonding sheet. 一種框架一體型遮罩的製造方法，該框架一體型遮罩由至少一個遮罩與用於支撐遮罩的框架形成為一體，其中該框架一體型遮罩的製造方法包括以下步驟： （a）在具備至少一個遮罩單元區域的框架上裝載藉由請求項5之製造方法製造而成的模板，並使遮罩與框架的遮罩單元區域對應；以及 （b）將遮罩附著於框架上。A method for manufacturing a frame-integrated mask. The frame-integrated mask is formed by integrating at least one mask and a frame for supporting the mask, wherein the method for manufacturing the frame-integrated mask includes the following steps: (A) Mount the template manufactured by the manufacturing method of claim 5 on a frame with at least one mask unit area, and make the mask correspond to the mask unit area of the frame; and (B) Attach the mask to the frame.
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