TW202010563A - Powder purification treatment device - Google Patents
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- TW202010563A TW202010563A TW107131435A TW107131435A TW202010563A TW 202010563 A TW202010563 A TW 202010563A TW 107131435 A TW107131435 A TW 107131435A TW 107131435 A TW107131435 A TW 107131435A TW 202010563 A TW202010563 A TW 202010563A
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本發明涉及半導體製程廢氣進行燒結反應後之生成物的捕捉技術,特別是有關於一種粉末淨化處理裝置。 The invention relates to a technology for capturing products after sintering reaction of exhaust gas in a semiconductor process, in particular to a powder purification processing device.
周知,半導體製程所生成的廢氣包含有SiH4、H2SiCl2(DCS)、WF6、BF3、NF3、SF6、CF4、C2F6 C3F8等,其中NF3、SF6、CF4、C2F6及C3F8等歸屬有害的氟化物(Per Fluorinated Compounds,PFC),倘若排放至大氣中,會造成環境污染,甚至於溫室效應,對地球暖化造成嚴重的影響,因此必須將該等廢氣處理成無害的氣體。 It is well known that the exhaust gas generated by the semiconductor manufacturing process includes SiH 4 , H 2 SiCl 2 (DCS), WF 6 , BF 3 , NF 3 , SF 6 , CF 4 , C 2 F 6 C 3 F 8 etc., among which NF 3 , SF 6 , CF 4 , C 2 F 6 and C 3 F 8 are classified as harmful fluoride (Per Fluorinated Compounds, PFC). If discharged into the atmosphere, it will cause environmental pollution, even the greenhouse effect, and cause global warming. Serious impact, so this waste gas must be treated as a harmless gas.
坊間所泛用的半導體廢氣處理設備,就是用於將上述廢氣處理成無害的氣體。一般而言,已知的半導體廢氣處理設備皆設有廢氣的反應腔室,半導體製程所生成的廢氣係導入反應腔室內,並且在反應腔室內以火燄或熱空氣所提供的高溫,對所述廢氣進行燒結(即燒結反應);特別的,透過高溫的燒結反應,可將例如是有害的NF3、SF6、CF4、C2F6及C3F8等氟化物氣體分解成無害的氟離子(F-),進而達到淨化廢氣的目的。 The semiconductor exhaust gas treatment equipment commonly used in the workshop is used to treat the above exhaust gas into harmless gas. Generally speaking, the known semiconductor exhaust gas treatment equipment is equipped with a reaction chamber for exhaust gas. The exhaust gas generated by the semiconductor manufacturing process is introduced into the reaction chamber, and the high temperature provided by the flame or hot air in the reaction chamber. Exhaust gas is sintered (that is, sintering reaction); in particular, through high-temperature sintering reaction, fluoride gases such as harmful NF 3 , SF 6 , CF 4 , C 2 F 6 and C 3 F 8 can be decomposed into harmless fluoride ions (F -), and thus to purify the exhaust gas.
且知,所述廢氣經過上述高溫燒結處理之後,會於反應腔室內生成SiO2、PO2、AlO2、W3O5、BO3的粉末生成物,這些生成物通常需經後段的水洗程序(scrubber)的捕捉及刷洗,使上述生成物能沉積於水中而被過濾篩離。 It is also known that after the above-mentioned high-temperature sintering treatment, the exhaust gas will generate powder products of SiO 2 , PO 2 , AlO 2 , W 3 O 5 , and BO 3 in the reaction chamber, and these products usually need to undergo a subsequent washing process (scrubber) capture and scrubbing, so that the above-mentioned products can be deposited in the water and filtered out.
但是,由於所述生成物中SiO2、PO2、AlO2、W3O5、BO3的粉末極其微細,在已知半導體廢氣處理設備中所用的水洗程序,無法充分捕捉所述的粉末生成物,造成半導體製程廢氣之 淨化效率不彰,甚至提高了廢氣處理設備及淨化工序的成本,因此亟待加以改善。 However, since the powders of SiO 2 , PO 2 , AlO 2 , W 3 O 5 , and BO 3 in the product are extremely fine, the water washing procedure used in the known semiconductor exhaust gas treatment equipment cannot sufficiently capture the powder generation. Substances, resulting in poor purification efficiency of semiconductor process exhaust gas, and even increased the cost of exhaust gas treatment equipment and purification process, so urgently need to be improved.
有鑑於此,本發明的主要目的在於改善半導體廢氣在經過高溫燒結處理之後所生成之SiO2、PO2、AlO2、W3O5、BO3的粉末極其微細,難以充分捕捉的問題。 In view of this, the main purpose of the present invention is to improve the problem that the powders of SiO 2 , PO 2 , AlO 2 , W 3 O 5 , and BO 3 generated after the semiconductor exhaust gas is subjected to high-temperature sintering treatment are extremely fine, and it is difficult to sufficiently capture the powder.
在一較佳實施中,本發明之技術手段包括於一器殼內規劃形成有提供含藏有粉末之廢氣通過的:一第一水洗腔室,具有一導入含藏粉末之廢氣的入口,且該第一水洗腔室內配置有一第一噴水器,該第一水洗腔室底部並形成一第一集水槽;一粉末捕捉腔室,內部間隔形成一第一過濾槽及一第二過濾槽,該第一過濾槽及該第二過濾槽之間經由一通道相連通,且該第一過濾槽及該第二過濾槽上方分別配置有至少一噴水頭,該第一過濾槽及該第二過濾槽內還分別擺放有多個捕集環;及一第二水洗腔室,具有一排放淨化後廢氣的出口,且該第二水洗腔室內配置有一第二噴水器,該第二水洗腔室係形成於該第一水洗腔室之一側,使得該粉末捕捉腔室坐落於該第一水洗腔室與該第二水洗腔室之間,該第二水洗腔室的底部形成一第二集水槽;其中,該第一過濾槽底部形成有多個連通該第一水洗腔室的第一透氣孔,且該第二過濾槽底部形成有多個連通該第二水洗腔室的第二透氣孔;該入口、該第一水洗腔室、所述多個第一透氣孔、該第一過濾槽、該粉末捕捉腔室、該第二過濾槽、所述多個第二透氣孔、該第二水洗腔室以及該出口依序成為導引廢氣通過的一氣體流道。 In a preferred implementation, the technical means of the present invention include a plan in which a waste gas containing powder is passed in a housing: a first water-washing chamber with an inlet for introducing waste gas containing powder, and A first water sprayer is arranged in the first water washing chamber, and a first water collecting tank is formed at the bottom of the first water washing chamber; a powder catching chamber is formed with a first filter tank and a second filter tank in the inner space. A communication channel is connected between the first filter tank and the second filter tank, and at least one water spray head, a first filter tank and the second filter tank are respectively disposed above the first filter tank and the second filter tank A plurality of trapping rings are also arranged inside; and a second water washing chamber with an outlet for discharging purified exhaust gas, and a second water sprayer is arranged in the second water washing chamber, and the second water washing chamber is Formed on one side of the first water washing chamber, so that the powder catching chamber is located between the first water washing chamber and the second water washing chamber, and a second sump is formed at the bottom of the second water washing chamber ; Wherein, the bottom of the first filter tank is formed with a plurality of first ventilation holes communicating with the first water washing chamber, and the bottom of the second filter tank is formed with a plurality of second ventilation holes communicating with the second water washing chamber; The inlet, the first water washing chamber, the plurality of first air holes, the first filter tank, the powder capturing chamber, the second filter tank, the plurality of second air holes, the second water wash The chamber and the outlet in turn become a gas flow channel for guiding exhaust gas through.
在進一步實施中,該入口及該出口分別形成於該器殼的頂部。其中該第一噴水器之一端通過該入口凸伸至該器殼外,該第二噴水器之一端通過該出口凸伸至該器殼外。 In a further implementation, the inlet and the outlet are respectively formed on the top of the housing. Wherein one end of the first water sprayer protrudes out of the housing through the inlet, and one end of the second water sprayer protrudes out of the housing through the outlet.
在進一步實施中,該第一過濾槽及該第二過濾槽分別形成於該粉末捕捉腔室的底層。 In a further implementation, the first filter tank and the second filter tank are respectively formed on the bottom layer of the powder capturing chamber.
在進一步實施中,該通道形成於該粉末捕捉腔室的上層。 In a further implementation, the channel is formed in the upper layer of the powder capture chamber.
在進一步實施中,該噴水器具有一呈中空柱狀的管體,該管體一端形成一朝上噴水的噴水孔,該管體的周邊並間隔設有多個朝下噴水的噴霧孔,該噴水孔的孔徑大於所述噴霧孔的孔徑。其中該管體並由該噴水孔向外延伸形成一擾流板,該擾流板具有由上朝下斜傾之一斜面,使該噴水孔間隔對應該斜面供水噴濺。 In a further implementation, the sprinkler has a hollow cylindrical tube body, an end of the tube body is formed with a spray hole for spraying water upward, and a plurality of spray holes for spraying water downward are spaced around the periphery of the tube body. The pore size of the hole is larger than that of the spray hole. The pipe body extends outward from the water spray hole to form a spoiler. The spoiler has a slope inclined from top to bottom, so that the water spray hole spaced corresponding to the slope water supply and splash.
在進一步實施中,所述捕集環呈環圈狀,所述捕集環的環壁上形成有多個通氣孔與由各該通氣孔一側朝所述捕集環的軸心方向延伸的一舌片。其中所述多個捕集環係分別並排橫置於該第一過濾槽及該第二過濾槽內。所述多個捕集環為多層式構造。 In a further implementation, the trap ring is in the shape of a ring, and a plurality of vent holes are formed in the ring wall of the trap ring, and each vent hole side extends toward the axis of the trap ring. A tongue. Wherein the plurality of trapping ring systems are placed side by side in the first filter tank and the second filter tank respectively. The plurality of trapping rings have a multilayer structure.
在進一步實施中,所述噴水頭之雙端分別形成一連接部及由連接部向外螺旋延伸的一螺旋部,所述連接部內形成一出水孔,該出水孔之一端朝向該螺旋部供水噴濺。 In a further implementation, the two ends of the sprinkler head respectively form a connection portion and a spiral portion extending outward from the connection portion, a water outlet hole is formed in the connection portion, and one end of the water outlet hole faces the spiral water supply nozzle splash.
在進一步實施中,該器殼配置於一半導體廢氣處理設備上,該半導體廢氣處理設備具有一反應腔室及一後段水洗腔室,該第一水洗腔室經由該入口與該反應腔室相連通,該第二水洗腔室經由該出口與該後段水洗腔室相連通。 In a further implementation, the housing is configured on a semiconductor exhaust gas treatment device, the semiconductor exhaust gas treatment device has a reaction chamber and a back-stage water washing chamber, the first water washing chamber communicates with the reaction chamber through the inlet , The second water washing chamber communicates with the rear stage water washing chamber via the outlet.
根據上述技術,本發明所能產生的技術效果在於:藉由廢氣依序接受多段水洗及多段粉末補捉的淨化處理,可以充分的捕捉廢氣中的粉末,進而提升廢氣的淨化效率。 According to the above-mentioned technology, the technical effect that the present invention can produce is that by sequentially purifying the exhaust gas through multiple stages of water washing and multiple stages of powder replenishment purification, the powder in the exhaust gas can be fully captured, thereby improving the purification efficiency of the exhaust gas.
以上所述技術手段及其產生效能的具體實施細節,請參照下列實施例及圖式加以說明。 For the specific implementation details of the above-mentioned technical means and their production efficiency, please refer to the following embodiments and drawings for description.
1‧‧‧粉末淨化處理裝置 1‧‧‧Powder purification treatment device
10‧‧‧器殼 10‧‧‧Housing
11‧‧‧入口 11‧‧‧ entrance
12‧‧‧出口 12‧‧‧Export
13‧‧‧氣體流道 13‧‧‧Gas flow channel
14‧‧‧排水口 14‧‧‧Drain
15‧‧‧溢流口 15‧‧‧Overflow
16‧‧‧連通管 16‧‧‧Connecting pipe
21‧‧‧第一水洗腔室 21‧‧‧First washing chamber
211‧‧‧第一集水槽 211‧‧‧The first water trough
22‧‧‧粉末捕捉腔室 22‧‧‧ powder capture chamber
221‧‧‧第一過濾槽 221‧‧‧First filter tank
222‧‧‧第二過濾槽 222‧‧‧Second filter tank
223‧‧‧第一透氣孔 223‧‧‧The first vent
224‧‧‧第二透氣孔 224‧‧‧ Second vent
23‧‧‧第二水洗腔室 23‧‧‧ Second washing chamber
231‧‧‧第二集水槽 231‧‧‧Second sump
24‧‧‧隔板 24‧‧‧Partition
25‧‧‧通道 25‧‧‧channel
30a‧‧‧第一噴水器 30a‧‧‧The first sprinkler
30b‧‧‧第二噴水器 30b‧‧‧Second sprinkler
31‧‧‧入水孔 31‧‧‧ water inlet
32‧‧‧噴水孔 32‧‧‧Water spray hole
33‧‧‧噴霧孔 33‧‧‧Spray hole
34‧‧‧擾流板 34‧‧‧Spoiler
40‧‧‧捕集環 40‧‧‧trap ring
40a‧‧‧上層捕集環 40a‧‧‧ Upper trap ring
40b‧‧‧下層捕集環 40b‧‧‧ Lower trap ring
41‧‧‧通氣孔 41‧‧‧vent
42‧‧‧舌片 42‧‧‧Tongue
50‧‧‧噴水頭 50‧‧‧Sprinkler
51‧‧‧連接部 51‧‧‧ Connection
52‧‧‧螺旋部 52‧‧‧Helix
53‧‧‧出水孔 53‧‧‧ Outlet
54‧‧‧供水管 54‧‧‧Water supply pipe
60‧‧‧半導體廢氣處理設備 60‧‧‧Semiconductor waste gas treatment equipment
61‧‧‧反應腔室 61‧‧‧Reaction chamber
62‧‧‧後段水洗腔室 62‧‧‧ Rear washing chamber
63‧‧‧廢氣導入管 63‧‧‧ Waste gas introduction pipe
64‧‧‧加熱器 64‧‧‧heater
圖1是本發明粉末淨化處理裝置的剖示圖;圖2是捕集環的立體示意圖; 圖3是廢氣通過捕集環的示意圖;圖4是噴水頭的放大示意圖;圖5是圖1的動作示意圖;圖6是本發明粉末淨化處理裝置配置於廢氣處理設備的剖示圖。 1 is a cross-sectional view of the powder purification treatment device of the present invention; FIG. 2 is a schematic perspective view of the capture ring; FIG. 3 is a schematic view of exhaust gas passing through the capture ring; FIG. 4 is an enlarged schematic view of the water spray head; 6 is a cross-sectional view of the powder purification treatment device of the present invention is disposed in exhaust gas treatment equipment.
首先,請參閱圖1,揭露本發明所提供一種粉末淨化處理裝置的較佳實施形態,說明該粉末淨化處理裝置1包括一器殼10,該器殼10可以是由金屬板(如不銹鋼板)螺組或焊接而成,該器殼10內規劃形成有提供含藏有粉末之廢氣通過的一第一水洗腔室21、一粉末捕捉腔室22及一第二水洗腔室23,其中: 該第一水洗腔室21具有一用以導入含藏粉末之廢氣的入口11,該入口11是形成於器殼10的頂部,也就是說,所述廢氣是以由上往下的方式通過入口11導入第一水洗腔室21內。該第一水洗腔室21內配置有一第一噴水器30a,該第一噴水器30a之一端通過入口11凸伸至器殼10外,以利於第一噴水器30a所噴撒的水捕捉由入口11導入第一水洗腔室21之廢氣中含藏的粉末。該第一水洗腔室21底部形成一第一集水槽211,該第一集水槽211用以收集第一噴水器30a所噴撒的水與廢氣中所含藏的粉末結合後形成的廢水。 First, please refer to FIG. 1 to disclose a preferred embodiment of a powder purification processing device provided by the present invention, illustrating that the powder
該粉末捕捉腔室22內部間隔形成一第一過濾槽221及一第二過濾槽222。更具體的說,該第一過濾槽221及第二過濾槽222是分別形成於粉末捕捉腔室22的底層。該粉末捕捉腔室22的上層形成一通道25,該第一過濾槽221及第二過濾槽222之間是經由該通道25相連通。該第一過濾槽221及第二過濾槽222上方(也就是粉末捕捉腔室22的頂部)分別配置有至少一噴水頭50。該第一過濾槽221及第二過濾槽222內還分別擺放有多個捕集環40。 A
該第二水洗腔室23具有一用以排放淨化後廢氣的出 口12,該出口12是形成於器殼10的頂部,也就是說,所述廢氣是以由下往上的方式通過第二水洗腔室23的出口12排放出去。該第二水洗腔室23內配置有一第二噴水器30b,該第二噴水器30b之一端通過出口12凸伸至器殼10外,以利於第二噴水器30b所噴撒的水捕捉由第二水洗腔室23的出口12所排放出去之廢氣中含藏的粉末。該第二水洗腔室23底部形成一第二集水槽231,該第二集水槽231用以收集第二噴水器30b所噴撒的水與廢氣中所含藏的粉末結合後形成的廢水。 The second
該第二水洗腔室23在實施上是形成於第一水洗腔室21之一側,使得該粉末捕捉腔室22坐落於第一水洗腔室21與第二水洗腔室23之間。該第二水洗腔室23與第一水洗腔室21之間在實施上是經由一隔板24相互間隔,該隔板24之一端延伸至器殼10的底部,該隔板24之另一端延伸至粉末捕捉腔室22的底部。該隔板24在實施上是延伸至粉末捕捉腔室22內而間隔第一過濾槽221及第二過濾槽222。該通道25是形成於粉末捕捉腔室22的頂部與該隔板24延伸至粉末捕捉腔室22內的一端之間。 In practice, the second
該第一過濾槽221底部在實施上形成有多個連通第一水洗腔室21的第一透氣孔223,該第二過濾槽222底部在實施上形成有多個連通第二水洗腔室23的第二透氣孔224。藉由該入口11、該第一水洗腔室21、所述多個第一透氣孔223、該第一過濾槽221、該粉末捕捉腔室22、該第二過濾槽222、所述多個第二透氣孔224、該第二水洗腔室23及該出口12之間所形成的一氣體流道13來導引廢氣通過,使廢氣沿氣體流道13依序接受多段水洗及多段粉末補捉的淨化處理。 The bottom of the
請再次參閱圖1,說明該第一噴水器30a與第二噴水器30b具有一呈中空柱狀的管體,該第一噴水器30a與第二噴水器30b之管體的雙端分別形成相連通的一入水孔31及一朝上噴水的噴水孔32,且該第一噴水器30a與第二噴水器30b之管體的周邊並間隔設有多個連通入水孔31並朝下噴水的噴霧孔33,該噴水 孔32的孔徑是大於該噴霧孔33的孔徑,使噴水孔32所噴撒的水珠粒度大於噴霧孔33所噴撒的水珠粒度。其中,由噴水孔32所噴撒的水珠因其粒度大而重會快速的掉落至第一集水槽211與第二集水槽231內。反之,由噴霧孔33所噴撒的水珠因其粒度小而輕會緩慢的掉落而呈擴散狀的分佈於第一水洗腔室21與第二水洗腔室23內。 Please refer to FIG. 1 again, illustrating that the
在具體實施上,該第一噴水器30a與第二噴水器30b之管體並由該噴水孔32向外延伸形成一擾流板34,該擾流板34是坐落在噴水孔32的噴水方向,該擾流板34具有由上朝下斜傾之一斜面(實質為圓錐狀的斜面),使該噴水孔32間隔對應該斜面供水噴濺,使噴水孔32所噴撒的水珠經由擾流板34的導引而呈網狀的分佈於第一水洗腔室21與第二水洗腔室23內,能提升噴水孔32在噴撒水珠時的覆蓋範圍。此外,該第一噴水器30a與第二噴水器30b經由入水孔31連接一進水管(未繪示),該進水管所提供的水經由噴水孔32及噴霧孔33向外噴出。 In a specific implementation, the tubes of the
請合併參閱圖1至圖3,說明所述捕集環40可以是由金屬製的片體彎曲形成而呈現環圈狀(如圖2所示)。所述捕集環40的環壁上形成有多個通氣孔41,且所述捕集環40的環壁上還形成有由通氣孔41一側朝捕集環40的軸心方向延伸的舌片42。所述廢氣在實施上是經由通氣孔41通過捕集環40(如圖3所示),該舌片42能增加捕集環40與廢氣的接觸面。該舌片42在實施上是由捕集環40的環壁冲製成型。所述舌片42是藉由水分子會附著於金屬表面的特性,來捕捉廢氣中與水結合的SiO2、PO2、AlO2、W3O5、BO3的粉末。進一步的說,所述捕集環42是以並排的方式橫置於第一過濾槽221及第二過濾槽222內,也就是所述捕集環40的軸向與所述廢氣沿氣體流道13流動時的方向垂直,使廢氣能經由通氣孔41通過捕集環40。所述捕集環40可以是多層式構造,在本實施例中,第一過濾槽221及第二過濾槽222內的捕集環40依其位置可區分為上層捕集環40a及下層捕集環40b(如圖3所 示),能增加捕集環40內舌片42與廢氣的接觸面,進而提升捕集環40在捕捉廢氣中粉末的效果。 Please refer to FIG. 1 to FIG. 3 together to illustrate that the
請合併參閱圖1及圖4,說明所述噴水頭50之雙端分別形成一連接部51及由連接部51向外螺旋延伸的一螺旋部52,該連接部51內形成一出水孔53,該出水孔53之一端朝向螺旋部52供水噴濺。進一步的說,該連接部51之周緣形成有螺紋,使噴水頭50能以螺接的方式鎖固於一供水管54上。該螺旋部52呈螺旋延伸的形狀,能使水在通過出水孔53之後經由螺旋部52的導引而呈螺旋狀的向外噴撒,藉此擴大噴水頭50的噴撒範圍。更進一步的說,所述噴水頭50所噴撒的水除了能捕捉廢氣中的粉末之外,還能用來清除捕集環40上附著的粉末,使粉末隨水掉落至第一集水槽211與第二集水槽231內,進而維持捕集環40在捕捉廢氣中的粉末時的效果。 Please refer to FIGS. 1 and 4 together to illustrate that the two ends of the
請合併參閱圖1及圖3,說明第一水洗腔室21內的廢氣經由第一透氣孔223導入第一過濾槽221內,會依序通過下層捕集環40b及上層捕集環40a(如圖3所示),再流至第二過濾槽222。接著,廢氣在第二過濾槽222內會依序通過上層捕集環40a及下層捕集環40b,再經由第二透氣孔224進入第二水洗腔室23。進一步的說,第一過濾槽221與第二過濾槽222上方的噴水頭50所噴撒的水會形成水珠向下掉落與廢氣接觸,進而捕捉廢氣中的SiO2、PO2、AlO2、W3O5、BO3的粉末。接著,水珠會通過上層捕集環40a上方的通氣孔41並沿舌片42進入上層捕集環40a內,當水珠沿舌片42移動時,會與其他水珠因接觸而結合,進而形成粒度較大的水珠。所述粒度較大的水珠會向下掉落並通過上層捕集環40a下方的通氣孔41而離開上層捕集環40a。然後,所述粒度較大的水珠會接著通過下層捕集環40b上方的通氣孔41並沿舌片42進入下層捕集環40b內,當水珠沿舌片42移動時,會與其他水珠因接觸而結合,進而形成粒度更大的水珠。最後,所述粒度更大的水珠會向下掉落並通過下層捕集環40b下方的通氣孔41 而離開下層捕集環40b。上述相異粒度大小的水珠在通過上層捕集環40a及下層捕集環40b時,會與廢氣進行接觸而捕捉廢氣中的SiO2、PO2、AlO2、W3O5、BO3的粉末。 Please refer to FIG. 1 and FIG. 3 together to illustrate that the exhaust gas in the first
請參閱圖1,說明該器殼10上還具有一排水口14及一溢流口15,其中該排水口14是形成於第二集水槽231下方的器殼10上,以便於排放第二集水槽231內所累積的廢水。該第二集水槽231與第一集水槽211之間的隔板24上設有一連通管16,能使第一集水槽211內所累積的廢水通過連通管16流入第二集水槽231內,再由排水口14排出。 Referring to FIG. 1, it is illustrated that the
該溢流口15是形成於第二集水槽231一側的器殼10上,該溢流口15的高度是低於粉末捕捉腔室22之第一透氣孔223與第二透氣孔224的高度,使第一集水槽211內所累積的廢水之高度低於第一透氣孔223的高度與第二集水槽231內所累積的廢水之高度低於第二透氣孔224的高度,能避免該第一集水槽211與第二集水槽231內所累積的廢水堵住第一透氣孔223與第二透氣孔224,使廢氣無法流入粉末捕捉腔室22內。 The
請參閱圖5,說明當廢氣在通過入口11進入第一水洗腔室21時,廢氣會先接觸到第一噴水器30a所噴撒的水珠,其中噴霧孔33所噴撒呈擴散狀分佈之粒度較小的水珠容易與廢氣中的SiO2、PO2、AlO2、W3O5、BO3粉末發生碰撞而與上述粉末結合,令上述粉末的粒度變大,進而使上述粉末的移動速度變慢而容易被由噴水孔32所噴撒呈網狀分佈之粒度較大的水珠沖刷至第一集水槽211內。接著,廢氣經由所述多個第一透氣孔223導入第一過濾槽221內,廢氣中的SiO2、PO2、AlO2、W3O5、BO3粉末因在第一水洗腔室21與水結合而容易附著於捕集環40上,且廢氣由第一過濾槽221流向第二過濾槽222的過程中會接受噴水頭50所噴撒的水流刷洗,廢氣隨後接觸該第二過濾槽222內的多個捕集環40來再次捕捉粉末。然後,廢氣經由所述多個第二透氣孔224導入第二水洗腔室23內,並且接觸第二噴水器30b所噴撒 的水流,再次捕捉廢氣中挾帶的粉末,並且經由第二集水槽231收集第二噴水器30b所噴撒而挾帶著粉末的廢水,隨後令廢氣經由該出口12排出。 Please refer to FIG. 5, when the exhaust gas enters the first
請參閱圖6,說明本發明之粉末淨化處理裝置1的氣殼10是配置於一半導體廢氣處理設備60上,該半導體廢氣處理設備60內具有一反應腔室61及一後段水洗腔室62,該第一水洗腔室21是經由入口11與反應腔室61相連通,該第二水洗腔室23是經由出口12與後段水洗腔室62相連通。進一步的說,該半導體廢氣處理槽60的頂部配置有至少一廢氣導入管63及一加熱器64,其中該廢氣導入管63導引廢氣進入反應腔室61內,該加熱器64提供高溫對廢氣進行燒結處理,該加熱器64可以是火燄加熱器或熱棒。 Referring to FIG. 6, it is illustrated that the
所述廢氣是先導入反應腔室61內,接著,以加熱器63所提供的高溫進行燒結處理,所述廢氣經過高溫的燒結反應後,會生成SiO2、PO2、AlO2、W3O5、BO3的粉末生成物。然後,所述廢氣經由入口11進入粉末淨化處理裝置1內,依序通過第一水洗腔室21、粉末捕捉腔室22及第二水洗腔室23,藉由在第一水洗腔室21、粉末捕捉腔室22及第二水洗腔室23內接受多段水洗及多段粉末補捉的淨化處理,可以充分的捕捉廢氣中的粉末,達到淨化廢氣的目的。 The waste gas is first introduced into the
以上實施例僅為表達了本發明的較佳實施方式,但並不能因此而理解為對本發明專利範圍的限制。應當指出的是,對於本發明所屬技術領域中具有通常知識者而言,在不脫離本發明構思的前提下,還可以做出複數變形和改進,這些都屬於本發明的保護範圍。因此,本發明應以申請專利範圍中限定的請求項內容為準。 The above examples merely express the preferred embodiments of the present invention, but they should not be construed as limiting the patent scope of the present invention. It should be noted that, for those with ordinary knowledge in the technical field to which the present invention belongs, multiple variations and improvements can be made without departing from the concept of the present invention, which all fall within the protection scope of the present invention. Therefore, the present invention shall be subject to the content of the claims defined in the scope of patent application.
1‧‧‧粉末淨化處理裝置 1‧‧‧Powder purification treatment device
10‧‧‧器殼 10‧‧‧Housing
11‧‧‧入口 11‧‧‧ entrance
12‧‧‧出口 12‧‧‧Export
13‧‧‧氣體流道 13‧‧‧Gas flow channel
14‧‧‧排水口 14‧‧‧Drain
15‧‧‧溢流口 15‧‧‧Overflow
16‧‧‧連通管 16‧‧‧Connecting pipe
21‧‧‧第一水洗腔室 21‧‧‧First washing chamber
211‧‧‧第一集水槽 211‧‧‧The first water trough
22‧‧‧粉末捕捉腔室 22‧‧‧ powder capture chamber
221‧‧‧第一過濾槽 221‧‧‧First filter tank
222‧‧‧第二過濾槽 222‧‧‧Second filter tank
223‧‧‧第一透氣孔 223‧‧‧The first vent
224‧‧‧第二透氣孔 224‧‧‧ Second vent
23‧‧‧第二水洗腔室 23‧‧‧ Second washing chamber
231‧‧‧第二集水槽 231‧‧‧Second sump
24‧‧‧隔板 24‧‧‧Partition
25‧‧‧通道 25‧‧‧channel
30a‧‧‧第一噴水器 30a‧‧‧The first sprinkler
30b‧‧‧第二噴水器 30b‧‧‧Second sprinkler
31‧‧‧入水孔 31‧‧‧ water inlet
32‧‧‧噴水孔 32‧‧‧Water spray hole
33‧‧‧噴霧孔 33‧‧‧Spray hole
34‧‧‧擾流板 34‧‧‧Spoiler
40‧‧‧捕集環 40‧‧‧trap ring
50‧‧‧噴水頭 50‧‧‧Sprinkler
54‧‧‧供水管 54‧‧‧Water supply pipe
Claims (12)
Priority Applications (3)
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TW107131435A TW202010563A (en) | 2018-09-07 | 2018-09-07 | Powder purification treatment device |
CN201811116934.6A CN110882596A (en) | 2018-09-07 | 2018-09-25 | Powder purification treatment device |
CN201821563481.7U CN209348332U (en) | 2018-09-07 | 2018-09-25 | powder purification treatment device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW107131435A TW202010563A (en) | 2018-09-07 | 2018-09-07 | Powder purification treatment device |
Publications (1)
Publication Number | Publication Date |
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TW202010563A true TW202010563A (en) | 2020-03-16 |
Family
ID=67780581
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW107131435A TW202010563A (en) | 2018-09-07 | 2018-09-07 | Powder purification treatment device |
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CN (2) | CN110882596A (en) |
TW (1) | TW202010563A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114392616A (en) * | 2022-01-21 | 2022-04-26 | 江苏中瑞咨询有限公司 | Industrial waste gas treatment device and process thereof |
Family Cites Families (6)
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KR100492475B1 (en) * | 2002-06-19 | 2005-06-03 | 주식회사 엔비시스템 | Low temperature plasma-catalysts system for VOC and odor treatment and method using thereof |
CN100375645C (en) * | 2005-01-26 | 2008-03-19 | 中芯国际集成电路制造(上海)有限公司 | Wet waste gas pre-treating device |
CN102218262A (en) * | 2011-04-15 | 2011-10-19 | 肖柏圣 | Resin-cast desulphurization nozzle and manufacturing method thereof |
CN203556243U (en) * | 2013-04-23 | 2014-04-23 | 刘会平 | Industrial organic waste gas processing device |
CN104436948B (en) * | 2014-11-04 | 2016-12-07 | 南京钢铁股份有限公司 | Integral type sulfur ammonium washing tail gas knot screen and impurity-removing method |
TWM517015U (en) * | 2015-11-26 | 2016-02-11 | Orient Service Co Ltd | Dust filter installed in semiconductor waste gas treatment apparatus |
-
2018
- 2018-09-07 TW TW107131435A patent/TW202010563A/en unknown
- 2018-09-25 CN CN201811116934.6A patent/CN110882596A/en not_active Withdrawn
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CN114392616A (en) * | 2022-01-21 | 2022-04-26 | 江苏中瑞咨询有限公司 | Industrial waste gas treatment device and process thereof |
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CN110882596A (en) | 2020-03-17 |
CN209348332U (en) | 2019-09-06 |
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