TW202009101A - Polishing pad dresser and chemical mechanical planarization method capable of prolonging CMP consumable service life to reduce cost, accelerate CMP efficiency, and increase production capacity - Google Patents
Polishing pad dresser and chemical mechanical planarization method capable of prolonging CMP consumable service life to reduce cost, accelerate CMP efficiency, and increase production capacity Download PDFInfo
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本發明為有關一種拋光墊修整器及化學機械平坦化的方法，尤指一種PcBN拋光墊修整器及使用該PcBN拋光墊修整器的化學機械平坦化的方法及積體電路的製程。 The invention relates to a polishing pad conditioner and a chemical mechanical planarization method, in particular to a PcBN polishing pad conditioner, a chemical mechanical planarization method using the PcBN polishing pad conditioner, and an integrated circuit process.
化學機械平坦化(Chemical mechanical planarization或CMP)為製造積體電路(或稱集成電路，通稱IC，即Integrated circuit circuit)必須多次使用的製程，隨著摩爾定律(Moore's Law)的電路線寬越小，CMP的要求越嚴苛，而且次數越多。以世界最大的晶圓代工企業，台灣積體電路(TSMC)為例，其7nm製程需把直徑為300mm(12吋)的IC晶圓進行CMP數十次，每次CMP的拋光速率要快且平，IC晶圓上沒有刮痕，這樣才能從完整的IC晶圓中切出小指甲尺寸的晶片，內含數十層總長超過十公里的銅導線，連接矽基材表面數十億個電晶體(Transistors)，使晶片以0或1運算，成為CPU/GPU/NPU等用於手機、電腦、機器人、互聯網等的硬體計算機。CMP不僅用於製造IC的邏輯運算體，也用於製造IC的記憶體(如DRAM、Flash memories等)，甚至矽晶圓本身，乃至於儲存體(如硬碟)，總之，CMP為製造大面積(如藍寶石晶圓)高度平坦化平面必用的工藝。 Chemical mechanical planarization (CMP) is a process that must be used multiple times for manufacturing integrated circuits (or integrated circuits, or ICs), as the circuit line width of Moore's Law increases. Smaller, the more stringent the requirements of CMP, and the more times. Taking the world's largest foundry company, Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC) as an example, its 7nm process requires CMP of 300mm (12-inch) IC wafers dozens of times, and the polishing rate of each CMP is faster. It is flat and has no scratches on the IC wafer, so that small nail-sized chips can be cut from the complete IC wafer, containing dozens of layers of copper wires with a total length of more than 10 kilometers, connecting billions of silicon substrate surfaces Transistors (transistors), the chip is calculated by 0 or 1, and become CPU/GPU/NPU and other hardware computers used in mobile phones, computers, robots, Internet, etc. CMP is not only used to manufacture the logic operation body of IC, but also used to manufacture the memory of IC (such as DRAM, Flash memories, etc.), even the silicon wafer itself, and even the storage body (such as hard disk). In short, CMP is a large manufacturing The area (such as a sapphire wafer) is highly necessary to flatten the plane.
具體來說，CMP是一種拋光方法，乃將旋轉的IC晶圓壓在旋轉的拋光墊(材質通常為PU)上，拋光墊上塗佈研磨漿料(Slurry)，內含奈米磨粒(如SiO2及Al2O3)及化學反應劑(如酸、鹼、過氧化氫)；而拋光墊內通常含有 微氣孔，用以調節壓縮率及儲存磨漿。拋光晶圓時必須控制晶圓和拋光墊的接觸面積及分佈，所以必須以一鑽石碟修整拋光墊才能在拋光墊表面產生大小適中及分佈均勻的絨毛(Asperities)。若晶圓與拋光墊的接觸面積太大，則拋光率低，CMP效率不足；反之，會局部拋光過多，造成晶圓不平(Within wafer non-uniformity，簡稱WIWNU)，乃至凹陷(Dishing,Erosion)，甚至刮傷的問題。除此之外，鑽石碟也負責切除拋光墊上硬屑(Glaze)，所以鑽石碟上鑽石的頂點高度的分佈控制了鑽石刺入拋光墊的深度分佈，影響了CMP的各種性能，故為控制CMP性能的關鍵耗材。 Specifically, CMP is a polishing method, which is to press the rotating IC wafer against the rotating polishing pad (usually made of PU), and apply polishing slurry (Slurry) on the polishing pad, which contains nano abrasive particles (such as SiO 2 and Al 2 O 3 ) and chemical reagents (such as acid, alkali, hydrogen peroxide); and the polishing pad usually contains micropores to adjust the compression rate and store the slurry. When polishing the wafer, the contact area and distribution of the wafer and the polishing pad must be controlled, so the polishing pad must be trimmed with a diamond disc to produce moderately sized and uniformly distributed fluff (Asperities) on the surface of the polishing pad. If the contact area between the wafer and the polishing pad is too large, the polishing rate is low and the CMP efficiency is insufficient; on the contrary, it will be polished locally, causing wafer unevenness (Within wafer non-uniformity, WIWNU), or even dent (Dishing, Erosion) And even scratching issues. In addition, the diamond dish is also responsible for cutting off the hard chips (Glaze) on the polishing pad, so the distribution of the height of the apex of the diamond on the diamond dish controls the depth distribution of the diamond penetrating the polishing pad, which affects the various performance of CMP, so the CMP Key consumables for performance.
鑽石碟通常在不銹鋼盤上，以金屬材料(如鎳或其合金)固定並排列研磨顆粒(Grind grit)，研磨顆粒採用鑽石磨粒，舉例可為150微米，固定的方法包括電鍍、硬銲或燒結。由於鑽石磨粒大小不一，頂點高度差異甚大，加上鑽石磨粒的形狀不規則，常含破裂面，以致切削拋光墊的銳利度難以控制，使得拋光墊上的絨毛大小及分佈不均，影響CMP的效率及良率。 Diamond discs are usually fixed on stainless steel discs and fixed with metal materials (such as nickel or its alloys) and arranged with abrasive particles (Grind grit). The abrasive particles use diamond abrasive particles, for example, 150 microns. The fixing method includes electroplating, brazing or sintering. Due to the different size of the diamond abrasive grains, the height of the apex is very different, and the shape of the diamond abrasive grains is irregular, often containing cracked surfaces, so that the sharpness of the cutting polishing pad is difficult to control, making the size and distribution of the fluff on the polishing pad uneven. The efficiency and yield of CMP.
另一方面，CMP為界面拋光法，而界面的壓力分佈由拋光墊的絨毛大小與分佈決定，鑽石碟的鑽石磨粒的頂點高度差異太大，以致實際上不到500顆鑽石磨粒能刺入拋光墊而形成絨毛。更有甚者，最高十顆的鑽石磨粒會有刺入太深(如大於60微米)的問題，使得比鑽石碟更貴的拋光墊加倍消耗。因此，鑽石磨粒的頂點高度差異太大，不僅同時縮短鑽石碟和拋光墊的壽命，也使得IC晶圓發生不平整，甚至造成刮傷的問題，降低了晶片的良率，除此之外，更換鑽石碟及拋光墊的停機時間也更頻繁，降低了單機的出貨量。 On the other hand, CMP is an interface polishing method, and the pressure distribution at the interface is determined by the size and distribution of the fluff of the polishing pad. The height of the apex of the diamond abrasive grains in the diamond dish is too different, so that in fact less than 500 diamond abrasive grains can stab Into the polishing pad to form fluff. What's more, the diamond abrasive grains of up to ten will have the problem of penetrating too deep (such as greater than 60 microns), which makes the polishing pad more expensive than the diamond disc double consumption. Therefore, the height difference of the apex of the diamond abrasive grains is too large, which not only shortens the life of the diamond disc and polishing pad at the same time, but also makes the IC wafer uneven, and even causes scratches, which reduces the yield of the wafer. In addition, the downtime for replacing diamond discs and polishing pads is also more frequent, which reduces the unit shipment.
雖然使用更小的鑽石磨粒可使頂點高差減少，但會造成鑽石磨粒的突出量降低，因而使得固定鑽石磨粒的金屬和磨漿發生磨擦，以致污染IC晶圓，也會降低晶片良率。使用規則晶形的鑽石磨粒可以降低頂點高差， 但會有鑽石磨粒不夠銳利的問題，造成拋光墊表面殘留硬屑，因此增加IC晶圓的微刮痕數。所以，以固定鑽石磨粒的鑽石碟有其難以可克服的困難，包括頂點高度差和銳利度不能兼得，以致CMP的成本(CoO)和效率(Throughput)無法提高。 Although the use of smaller diamond abrasive particles can reduce the height difference of the apex, it will cause the protrusion of the diamond abrasive particles to be reduced, thus causing the friction between the metal and the polishing slurry that fix the diamond abrasive particles, which will contaminate the IC wafer and also reduce the chip. Yield. The use of regular crystal diamond grains can reduce the apex height difference, but there will be the problem that the diamond grains are not sharp enough, resulting in residual hard chips on the surface of the polishing pad, thus increasing the number of micro scratches on the IC wafer. Therefore, diamond discs with fixed diamond abrasive particles have their insurmountable difficulties, including the difference in vertex height and sharpness, so that the cost (CoO) and efficiency (Throughput) of CMP cannot be improved.
有鑑於此，本案發明人以整片的多晶鑽石(Polycrystalline diamond，或稱PCD)燒結片作為鑽石碟的研磨結構，搭配放電加工而製成的鑽石碟，具有齊一的頂點高度和一致的金字塔形狀，成為美國應用材料公司(Applied Materials Co.)發展以電流氧化銅導線的Electrolytic CMP(eCMP)選用的鑽石碟。 In view of this, the inventor of the present case used the whole piece of polycrystalline diamond (Polycrystalline diamond, or PCD) sintered disc as the grinding structure of the diamond disc, and the diamond disc made by electrical discharge machining has a uniform peak height and a consistent The pyramid shape became the diamond disc used by American Applied Materials Co. to develop Electrolytic CMP (eCMP) with current copper oxide wire.
但上述的PCD含有燒結劑鈷，放電加工後蒸發成氣孔，易黏磨屑，並不適用CMP製程，因此，仍有待改進。 However, the above-mentioned PCD contains sintering agent cobalt, which evaporates into pores after electric discharge machining, and is easy to stick abrasive debris, which is not suitable for the CMP process.
CMP需要拋光墊的表面絨毛細而多，細絨毛可避免晶圓刮傷，多絨毛可加速晶圓拋光，細絨毛需更多的鑽石頂尖刺入，即鑽石的最高頂點需齊一，當鑽石的工作顆粒數多則刺入就不深，故鑽石頂尖的角度要銳利，鑽石先天就有頂尖不齊一和頂尖不銳利的問題。 CMP requires a fine and large surface fluff on the polishing pad. Fine fluff can avoid wafer scratching. Multiple fluff can accelerate wafer polishing. Fine fluff requires more diamond tip penetration, that is, the highest apex of the diamond needs to be uniform. When the number of working particles is large, the penetration is not deep, so the angle of the diamond top should be sharp, and the diamond has inherent problems of uneven top and unsharp top.
本發明的主要目的，在於解決習知採用鑽石材料的拋光墊修整器的上述問題及缺點，本發明的另一目的，乃延長了頂尖浸泡在CMP磨漿內化學反應的速率，因而提供優於鑽石碟的拋光墊修整器。 The main purpose of the present invention is to solve the above-mentioned problems and shortcomings of conventional polishing pad dressers using diamond materials. Another object of the present invention is to extend the rate of chemical reaction of the tip immersed in the CMP slurry, thus providing advantages Polishing pad dresser for diamond discs.
本發明提供一種用於CMP製程的拋光墊修整器，包含複數個PcBN研磨片，每一該PcBN研磨片上形成有複數個研磨尖端，該研磨尖端具有一足以刺入拋光墊而移除磨屑的突出高度。 The invention provides a polishing pad conditioner for a CMP process, which includes a plurality of PcBN polishing pads, each of which is formed with a plurality of polishing tips, the polishing tip having a sufficient to penetrate the polishing pad to remove abrasive debris Highlight the height.
在一實施例中，該研磨尖端的平均刺入深度大於該拋光墊的氣孔的平均大小。 In one embodiment, the average penetration depth of the grinding tip is greater than the average size of the pores of the polishing pad.
在一實施例中，該氣孔的平均大小介於30微米至60微米之間。 In one embodiment, the average size of the pores is between 30 microns and 60 microns.
本發明還提供一種拋光墊修整器，包含複數個PcBN研磨片，每一該PcBN研磨片上形成有複數個研磨尖端，其中，全部的該研磨尖端中，距離最高的該研磨尖端的高度差在60微米範圍內的該研磨尖端數量介於300個至5000個之間。 The invention also provides a polishing pad conditioner, which includes a plurality of PcBN abrasive sheets, each of which is formed with a plurality of abrasive tips, wherein, among all the abrasive tips, the height difference of the highest abrasive tip is 60 The number of grinding tips in the micrometer range is between 300 and 5000.
在一實施例中，該PcBN研磨片固定在一陶瓷基體上。 In one embodiment, the PcBN abrasive sheet is fixed on a ceramic substrate.
在一實施例中，該PcBN研磨片分別透過一調節該PcBN研磨片上的該研磨尖端的突出高度的厚度補償塑性體結合至一基座上。 In one embodiment, the PcBN polishing pads are respectively coupled to a base through a thickness compensation plastic body that adjusts the protrusion height of the polishing tip on the PcBN polishing pads.
在一實施例中，該厚度補償塑性體為一有機材料。 In one embodiment, the thickness compensation plastic body is an organic material.
在一實施例中，該PcBN研磨片的cBN的體積百分比至少90%。 In one embodiment, the volume percentage of cBN of the PcBN abrasive sheet is at least 90%.
在一實施例中，距離最高的該研磨尖端的高度差在40微米範圍內的該研磨尖端數量介於300個至1000個之間。 In one embodiment, the number of the grinding tips with the highest height difference between the grinding tips in the range of 40 microns is between 300 and 1,000.
在一實施例中，單一該PcBN研磨片上的該研磨尖端中，距離最高的該研磨尖端的高度差在40微米範圍內的該研磨尖端數量介於50個至500個之間。 In one embodiment, among the polishing tips on a single PcBN polishing sheet, the number of polishing tips within the range of 40 microns in height from the highest polishing tip is between 50 and 500.
在一實施例中，該研磨尖端具有一尖峰，該尖峰的夾角介於40度至120度之間。 In one embodiment, the grinding tip has a peak, and the angle of the peak is between 40 degrees and 120 degrees.
在一實施例中，該尖峰的夾角介於60度至100度之間。 In one embodiment, the included angle of the peak is between 60 degrees and 100 degrees.
在一實施例中，其中該尖峰的形狀呈一錐形或一稜線。 In one embodiment, the shape of the peak is a cone or a ridge.
在一實施例中，該錐形為一多邊錐形，該多邊錐形的邊數介於3至6個之間。 In one embodiment, the cone is a polygonal cone, and the number of sides of the polygonal cone is between 3 and 6.
在一實施例中，該PcBN研磨片的一外形呈一方形或一圓形。 In one embodiment, the PcBN abrasive sheet has a square shape or a round shape.
在一實施例中，該研磨尖端包含一磨鈍的頂面，該頂面的寬度介於2微米至20微米之間。 In one embodiment, the grinding tip includes a blunt top surface with a width between 2 microns and 20 microns.
在一實施例中，該PcBN研磨片的數量介於4個至50個之間。 In one embodiment, the number of the PcBN abrasive discs is between 4 and 50.
在一實施例中，每一該PcBN研磨片上的該研磨尖端排列形成一陣列。 In one embodiment, the polishing tips on each PcBN polishing sheet are arranged to form an array.
本發明更提供一種化學機械平坦化的方法，包括以下步驟：提供一拋光墊；設置一工件於該拋光墊的表面，使該工件與該拋光墊相互研磨；以及使用一上述之修整器，設置於該拋光墊的表面，移除該工件研磨後之碎屑。 The invention further provides a chemical mechanical planarization method, including the following steps: providing a polishing pad; setting a workpiece on the surface of the polishing pad to grind the workpiece and the polishing pad against each other; and using a dresser as described above, setting On the surface of the polishing pad, remove the debris from the workpiece after grinding.
在一實施例中，該工件為一半導體元件，該半導體元件包含一層或多層的銅膜、鎢膜、氧化膜、阻擋層或其組合。 In one embodiment, the workpiece is a semiconductor device, and the semiconductor device includes one or more layers of a copper film, a tungsten film, an oxide film, a barrier layer, or a combination thereof.
是以，本發明PcBN作為修整器的研磨片，取代傳統的鑽石碟，習知的修整器往往僅考慮機械性能，但忽略在進行CMP時，IC晶圓和拋光墊修整器同時會涉及化學侵蝕和機械研磨，而PcBN不僅具備高化學惰性，適合對抗CMP中的化學侵蝕，相較於大部分材料也具有優異的機械性能，更具備優於鑽石材料的被加工性，適合將研磨尖端加工成特定的形狀以及排列，以達高度客製化的需求。 Therefore, the PcBN of the present invention is used as a polishing pad of a dresser to replace the traditional diamond disc. The conventional dresser often only considers the mechanical properties, but ignores that when performing CMP, the IC wafer and polishing pad dresser will also involve chemical attack. And mechanical grinding, and PcBN not only has high chemical inertness, it is suitable for resisting chemical attack in CMP, it also has excellent mechanical properties compared to most materials, but also has better machinability than diamond materials, suitable for processing the grinding tip into Specific shapes and arrangements to achieve a high degree of customization.
10‧‧‧拋光墊修整器 10‧‧‧Polishing pad dresser
20‧‧‧PcBN研磨片 20‧‧‧PcBN grinding disc
20a‧‧‧第一PcBN研磨片 20a‧‧‧First PcBN grinding disc
20b‧‧‧第二PcBN研磨片 20b‧‧‧Second PcBN grinding disc
21a‧‧‧第一研磨尖端 21a‧‧‧First grinding tip
21b‧‧‧第二研磨尖端 21b‧‧‧Second grinding tip
22a‧‧‧第一頂面 22a‧‧‧First top
22b‧‧‧第二頂面 22b‧‧‧Second top surface
23b‧‧‧凹陷 23b‧‧‧Sag
24‧‧‧邊 24‧‧‧
25‧‧‧角 25‧‧‧ corner
30‧‧‧陶瓷基體 30‧‧‧Ceramic substrate
40‧‧‧厚度補償塑性體 40‧‧‧thickness compensated plastic body
50‧‧‧基座 50‧‧‧Dock
51‧‧‧凹陷 51‧‧‧Sag
60‧‧‧硬質層 60‧‧‧ Hard layer
70‧‧‧流程 70‧‧‧Flow
71‧‧‧步驟 71‧‧‧Step
72‧‧‧步驟 72‧‧‧Step
73‧‧‧步驟 73‧‧‧Step
W‧‧‧寬度 W‧‧‧Width
『圖1』為本發明拋光墊修整器一實施例的示意圖。 "Figure 1" is a schematic diagram of an embodiment of a polishing pad conditioner of the present invention.
『圖2』為『圖1』的該第一PcBN研磨片的放大示意圖。 "Figure 2" is an enlarged schematic view of the first PcBN polishing sheet of "Figure 1".
『圖3』為『圖1』的該第二PcBN研磨片的放大示意圖。 "Figure 3" is an enlarged schematic view of the second PcBN polishing sheet of "Figure 1".
『圖4』為『圖1』的A-A方向剖面示意圖。 "Figure 4" is a schematic cross-sectional view of "Figure 1" in the A-A direction.
『圖5』為本發明拋光墊修整器另一實施例的示意圖。 "Figure 5" is a schematic view of another embodiment of the polishing pad conditioner of the present invention.
『圖6』為本發明拋光墊修整器又一實施例的示意圖。 "Figure 6" is a schematic diagram of another embodiment of the polishing pad conditioner of the present invention.
『圖7』為本發明化學機械平坦化的方法一實施例的步驟流程示意圖。 "Figure 7" is a schematic flowchart of the steps of an embodiment of the chemical mechanical planarization method of the present invention.
有關本發明的詳細說明及技術內容，現就配合圖式說明如下：本發明提供一種用於CMP製程的拋光墊修整器，包含複數個PcBN研磨片，每一該PcBN研磨片上形成有複數個研磨尖端，該研磨尖端具有一足以刺入拋光墊而移除磨屑的突出高度，PcBN(Polycrystalline cubic boron nitride)乃由cBN微粉以超高壓燒結(Ultra high pressure sintered)得到。在一實施例中，該研磨尖端的平均刺入深度大於該拋光墊的氣孔的平均大小，該氣孔的平均大小可介於30微米至60微米之間，而該研磨尖端的工作數目可高於500個。 The detailed description and technical content of the present invention will now be explained in conjunction with the drawings as follows: The present invention provides a polishing pad conditioner for a CMP process, which includes a plurality of PcBN polishing pads, each of which is formed with a plurality of polishing pads The tip has a protruding height sufficient to penetrate the polishing pad to remove abrasive debris. PcBN (Polycrystalline cubic boron nitride) is obtained by ultra-high pressure sintered cBN fine powder. In an embodiment, the average penetration depth of the grinding tip is greater than the average size of the pores of the polishing pad, the average size of the pores may be between 30 microns and 60 microns, and the number of work of the grinding tip may be higher than 500.
另一方面，本發明提供一種以PcBN製成拋光墊修整器(Pad conditioner)，該拋光墊修整器包含複數個PcBN研磨片，每一該PcBN研磨片上形成有複數個研磨尖端，其中，全部的該研磨尖端中，距離最高的該研磨尖端的高度差在60微米範圍內的該研磨尖端數量介於300個至5000個之間。在一實施例中，該PcBN研磨片固定在一陶瓷基體上，且該PcBN研磨片分別透過一調節該PcBN研磨片上的該研磨尖端的突出高度的厚度補償塑性體結合至一基座上。在一實施例中，該厚度補償塑性體為一有機材料。在一實施例中，該PcBN研磨片的cBN的體積百分比至少90%。 On the other hand, the present invention provides a pad conditioner made of PcBN. The pad conditioner includes a plurality of PcBN abrasive sheets, and each of the PcBN abrasive sheets is formed with a plurality of abrasive tips. Among the grinding tips, the number of the grinding tips with the highest height difference from the grinding tip in the range of 60 microns is between 300 and 5000. In one embodiment, the PcBN polishing sheet is fixed on a ceramic substrate, and the PcBN polishing sheet is bonded to a base through a thickness compensation plastic body that adjusts the protrusion height of the polishing tip on the PcBN polishing sheet. In one embodiment, the thickness compensation plastic body is an organic material. In one embodiment, the volume percentage of cBN of the PcBN abrasive sheet is at least 90%.
在一實施例中，全部的該研磨尖端中，距離最高的該研磨尖端的高度差在40微米的範圍內的該研磨尖端數量介於300個至1000個之間，在另一實施例中，單一該PcBN研磨片上的該研磨尖端中，距離最高的該研磨尖端的高度差在40微米的範圍內的該研磨尖端數量介於50個至500個之間。 In one embodiment, among all the grinding tips, the number of the grinding tips with the highest height difference from the grinding tip in the range of 40 microns is between 300 and 1,000. In another embodiment, Among the polishing tips on a single PcBN polishing sheet, the number of the polishing tips within the range of 40 microns from the highest polishing tip is between 50 and 500.
在一實施例中，該研磨尖端具有一尖峰，該尖峰的夾角介於40度至120度之間，在另一實施例中，該尖峰的夾角介於60度至100度之間。在 一實施例中，該尖峰的形狀呈一錐形或一稜線，該錐形為一多邊錐形，該多邊錐形的邊數介於3個至6個之間，且在一實施例中，該研磨尖端包含一磨鈍的頂面，該頂面的寬度介於2微米至20微米之間。 In one embodiment, the grinding tip has a sharp peak with an angle between 40 degrees and 120 degrees. In another embodiment, the sharp peak has an angle between 60 degrees and 100 degrees. In one embodiment, the shape of the peak is a cone or a ridge, the cone is a polygonal cone, the number of sides of the polygonal cone is between 3 and 6, and in one embodiment In this case, the grinding tip includes a blunt top surface with a width between 2 microns and 20 microns.
在一實施例中，該PcBN研磨片的一外形呈一方形或一圓形，該PcBN研磨片的數量介於4個至50個之間，每一該PcBN研磨片上的該研磨尖端排列形成一陣列。 In one embodiment, the outer shape of the PcBN polishing pad is a square or a circle, the number of the PcBN polishing pads is between 4 and 50, and the polishing tips on each of the PcBN polishing pads are arranged to form a Array.
為讓本案內容更易懂，在閱讀以下描述時應參照圖示，要注意的是，許多特徵並非依照數量或比例繪製，實際上，各種特徵的數量或尺寸可能會增大或縮小，以使所述更為清楚。 To make the content of this case easier to understand, you should refer to the icons when reading the following description. It should be noted that many features are not drawn according to the number or proportion. In fact, the number or size of various features may increase or decrease, so that all The statement is more clear.
請參閱『圖1』、『圖2』以及『圖3』，分別為本發明拋光墊修整器一實施例的示意圖、『圖1』的該第一PcBN研磨片的放大示意圖以及『圖1』的該第二PcBN研磨片的放大示意圖。本實施例的拋光墊修整器10包含複數個PcBN研磨片20，每一該PcBN研磨片20上形成有複數個研磨尖端，其中，全部的該研磨尖端的尖端高點的高度差在60微米範圍內的數量介於300個至5000個之間。本實施例中，該PcBN研磨片20的外形呈一方形，該PcBN研磨片20的邊24的方位朝外，該PcBN研磨片20包括一第一PcBN研磨片20a以及一第二PcBN研磨片20b，該第一PcBN研磨片20a以及該第二PcBN研磨片20b交錯排列，該第一PcBN研磨片20a包括複數個第一研磨尖端21a，該第一研磨尖端21a呈一多邊錐形，該多邊錐形的邊數為4個，該第一研磨尖端21a包括一第一頂面22a，該第一頂面22a係一被磨鈍的平面，而該第二PcBN研磨片20b包括複數個第二研磨尖端21b，該第二研磨尖端21b呈一稜線，該第二研磨尖端21b包含複數個第二頂面22b以及複數個和該第二頂面22b交錯的凹陷23b，而於其他實施例中，該第二研磨尖端21b也可以僅 包含該第二頂面22b，而沒有該凹陷23b。該頂面的寬度W介於2微米至20微米之間。 Please refer to "Figure 1", "Figure 2" and "Figure 3", which are schematic diagrams of an embodiment of the polishing pad conditioner of the present invention, an enlarged schematic diagram of the first PcBN abrasive sheet of "Figure 1" and "Figure 1", respectively An enlarged schematic view of the second PcBN polishing sheet. The
請參閱『圖4』，為『圖1』的A-A方向剖面示意圖，本實施例中，該PcBN研磨片20固定在一陶瓷基體30上，該陶瓷基體30例如為鈷燒結的碳化鎢，該陶瓷基體30再利用一厚度補償塑性體40固定在一基座50的凹陷51內，該基座50可採用金屬，例如不銹鋼，該厚度補償塑性體40可為一有機材料，例如熱固化樹脂或熱塑性樹脂，其於硬化前具備彈性，在硬化前，可利用一平面頂板，如『圖4』所示的一硬質層60調整該有機材料的厚度，從而調整該PcBN研磨片20a上的該研磨尖端21a相對於一水平面的突出高度，而進一步改善平坦度。在一實施例中，該厚度補償塑性體40可採用環氧樹脂，該環氧樹脂的厚度可支撐該PcBN研磨片20使頂尖可觸及該平面頂板，以致該拋光墊修整器10上所有的該PcBN研磨片20上的頂尖高度可以被控制。 Please refer to "Figure 4", which is a schematic cross-sectional view taken along the line AA of "Figure 1". In this embodiment, the PcBN
請繼續參閱『圖5』及『圖6』，分別為本發明拋光墊修整器另一實施例的示意圖以及又一實施例的示意圖。『圖4』的實施例中，該第一PcBN研磨片20a的邊24的方位朝外，而該第二PcBN研磨片20b的角25的方位朝外；而在『圖5』的實施例中，該PcBN研磨片20僅包括該第一PcBN研磨片20a，該第一PcBN研磨片20a的邊24的方位朝外。以上僅為該PcBN研磨片20配置的舉例說明，於其他實施例中，該PcBN研磨片20的數量、方位以及尖端的分布，均可視需求而調整。尤有甚者，本發明拋光墊修整器的其他實施例中，該PcBN研磨片20亦可和其他種類的研磨單元搭配設置於該基座50上，例如以傳統鑽石磨粒製成的研磨單元。 Please continue to refer to "Figure 5" and "Figure 6", which are schematic diagrams of another embodiment and another embodiment of the polishing pad conditioner of the present invention, respectively. In the embodiment of FIG. 4, the orientation of the
本發明更提供一種化學機械平坦化的方法，請參閱『圖7』，為本發明化學機械平坦化的方法一實施例的步驟流程示意圖，本實施例的流程 70包括以下步驟。步驟71：先提供一拋光墊；步驟72：設置一工件於該拋光墊的表面，使該工件與該拋光墊相互旋轉研磨；以及步驟73：使用一上述之拋光墊修整器，設置於該拋光墊的表面，移除該工件研磨後之碎屑。在一實施例中，該工件為一半導體元件，該半導體元件包含一層或多層的銅膜、鎢膜、氧化膜、阻擋層(如TaN)或其組合。 The present invention further provides a chemical mechanical planarization method. Please refer to FIG. 7, which is a schematic flowchart of an embodiment of the chemical mechanical planarization method of the present invention. The
在磨料的分類中，常見者包括氧化鋁(Al203)、立方氮化硼(cBN)、碳化矽(SiC)以及鑽石(Diamond)，又俗稱A(Al203)、B(cBN)、C(SiC)、D(Diamond)。其中，AB耐溫、耐蝕，CD不耐溫、不耐蝕；AC硬度較低(<2500Kg/mm2)，為傳統磨料，BD硬度較高，鑽石的Knoop Hardness>7000Kg/mm2，cBN的硬度約5000Kg/mm2，BD合稱超級磨料，乃以超高壓合成製得。以CMP製程來說，應同時考慮磨料的抗蝕性和機械性，但習知技術僅考慮機械性(Mechanical)，忽略了化學性(Chemical)，因此，僅採用鑽石作為磨料並無法優化CMP。cBN和鑽石同為超硬材料，但具有鑽石遠不及的抗氧化及抗腐蝕性，鑽石雖較硬，但CMP的磨漿具備高度腐蝕性及氧化性。以鑽石碟的使用壽命來說，用在氧化膜平坦化的鑽石碟的使用壽命約為用在鎢膜平坦化的鑽石碟的三倍，原因在於，當應用於鎢膜或其他金屬層的平坦化時，研磨漿料中需要含有具強氧化性或強腐蝕性的物質，例如過氧化氫或強酸，而這些具強腐蝕性或強還原性的物質會使鑽石尖刃的磨損速率加快；反觀，PcBN具備化學惰性，例如鑽石在空氣裡約600℃氧化，而PcBN為1400℃才會氧化。又在上述的CMP製程中，應用於鎢膜平坦化的製程溫度較高(約80℃)，而鑽石氧化乃在刃角處且在更高的溫度下產生。尤有進者，氧化膜平坦化和拋光墊的修整乃同時進行(in-situ)，而鎢平坦化和拋光墊的修整乃交互進行(ex-situ)，故鑽石碟在鎢平坦化製程很少和研磨漿料反應，即使如此，鑽石切刃仍被快速氧化。 In the classification of abrasives, common ones include alumina (Al 2 0 3 ), cubic boron nitride (cBN), silicon carbide (SiC) and diamond (Diamond), also commonly known as A (Al 2 0 3 ), B (cBN ), C (SiC), D (Diamond). Among them, AB is temperature and corrosion resistant, CD is not temperature and corrosion resistant; AC hardness is low (<2500Kg/mm 2 ), which is traditional abrasive, BD hardness is high, Knoop Hardness of diamond>7000Kg/mm 2 , hardness of cBN About 5000Kg/mm 2 , BD is collectively called super abrasive and is made by ultra-high pressure synthesis. In terms of the CMP process, the corrosion resistance and mechanical properties of the abrasive should be considered at the same time, but the conventional technology only considers the mechanical (Mechanical), ignoring the chemical (Chemical), therefore, only using diamond as the abrasive can not optimize CMP. Both cBN and diamond are superhard materials, but they have far less oxidation and corrosion resistance than diamonds. Although diamonds are harder, the CMP refining is highly corrosive and oxidizing. In terms of the service life of the diamond disc, the service life of the diamond disc used for the flattening of the oxide film is about three times that of the diamond disc used for the flattening of the tungsten film, because when applied to the flatness of the tungsten film or other metal layers At the time of polishing, the abrasive slurry needs to contain strongly oxidizing or corrosive substances, such as hydrogen peroxide or strong acid, and these highly corrosive or strongly reducing substances will accelerate the wear rate of the diamond sharp edge; PcBN is chemically inert. For example, diamond is oxidized in air at about 600°C, while PcBN is oxidized at 1400°C. In the above CMP process, the temperature of the process used to planarize the tungsten film is higher (about 80°C), and diamond oxidation is generated at the corner of the blade and at a higher temperature. In particular, the oxide film flattening and polishing pad trimming are performed simultaneously (in-situ), while the tungsten flattening and polishing pad trimming are performed ex-situ, so the diamond disc is very tungsten planarizing. Less reaction with abrasive slurry, even so, the diamond cutting edge is still oxidized quickly.
根據上述，進行CMP時，IC晶圓和拋光墊修整器同時被化學侵蝕和機械研磨，傳統鑽石碟上的鑽石其高硬度雖耐機械研磨，但對抗腐蝕性卻遠不如PcBN，反而後者稍低於鑽石磨粒的硬度提供以鑽石磨輪、線鋸更好加工的方便性，使PcBN可以鑽石雕刻出特製的圖案，例如特定形狀的尖錐以及尖錐之間的間距，解決了頂點高度和鑽石銳利度難以兼顧的兩難問題。 According to the above, when performing CMP, the IC wafer and polishing pad dresser are simultaneously chemically eroded and mechanically polished. Although the high hardness of the diamond on the traditional diamond dish is resistant to mechanical grinding, it is far less resistant to corrosion than PcBN, but the latter is slightly lower The hardness of diamond abrasive grains provides the convenience of better processing with diamond grinding wheels and wire saws, so that PcBN can carve out special patterns of diamonds, such as the pointed cones of a specific shape and the spacing between the pointed cones, which solves the problem of apex height and diamond The dilemma that sharpness is difficult to balance.
傳統技術中，有以雕刻的陶瓷材料(如矽、碳化矽或碳化鎢)上鍍覆鑽石膜而成的拋光墊修整器，但鑽石膜乃以氣相化學沉積(CVD)在真空環境下披覆，不僅鑽石顆粒之間沒有燒結鍵，披覆的界面也易剝離，因此必須使用薄(例如10微米)的鑽石膜鍍在鈍頂的金字塔上。這類鑽石碟修整的拋光墊的絨毛塑性拉扯過大，增加了接觸的界面，限制IC晶圓的拋光速率，而薄鑽石膜也縮短了鑽石碟壽命，兩者都降低了CMP單機的產能。 In the traditional technology, there are polishing pad dressers made of diamond films coated with engraved ceramic materials (such as silicon, silicon carbide, or tungsten carbide), but the diamond films are coated in a vacuum environment by vapor chemical deposition (CVD) Not only is there no sintered bond between the diamond particles, but the coated interface is also easy to peel, so a thin (for example, 10 microns) diamond film must be used to plate on the blunt pyramid. This type of diamond disc dressing polishing pad has too large a fluff plastic pull, which increases the contact interface and limits the polishing rate of IC wafers. The thin diamond film also shortens the life of the diamond disc, both of which reduce the capacity of a single CMP machine.
然而，本發明的PcBN拋光墊修整器沒有脆弱的鍍膜，因此可以使用更多的尖錐，延長拋光墊修整器的壽命，修整時可在拋光墊產生更多的絨毛，加快了CMP拋光IC晶圓的速率。 However, the PcBN polishing pad conditioner of the present invention does not have a fragile coating. Therefore, more pointed cones can be used to extend the life of the polishing pad conditioner. During dressing, more fluff can be generated on the polishing pad, which accelerates the CMP polishing IC crystal The rate of the circle.
以應用鑽石碟在鎢的CMP製程為例，鑽石碟剌入拋光墊最深(約60微米)的切刃，壽命僅達切削數十公里，而同一鑽石碟CMP氧化膜可撐近兩百公里，可見鑽石刃口微氧化的確是不明顯的事實。這個問題可用PcBN修整器解決。 Taking the CMP process using diamond discs in tungsten as an example, the diamond disc penetrates the deepest (approximately 60 microns) cutting edge of the polishing pad, and the life span is only a few tens of kilometers, while the same diamond disc CMP oxide film can support nearly 200 kilometers. It can be seen that the micro-oxidation of the diamond blade is indeed not obvious. This problem can be solved with PcBN trimmer.
另一項不明顯的事實為刺入拋光墊的尖頂的數目和切削的最深的深度成反比關係，經過大量比對各大半導體廠使用過的鑽石碟證明，正常CMP使用過的鑽石碟的尖頂被研磨的數目約介於300至500之間，這只佔一般鑽石碟上數萬顆鑽石數目約5%，可見大部分的鑽石並未接觸到拋光墊，即使接觸，因鑽石頂點為光滑的鈍角，實際上也沒有刺入，而是使拋光墊 壓陷或塑性變形。另外，拋光墊內通常含有微氣孔，用以調節壓縮率及儲存磨漿，而拋光墊內部的微氣孔為封閉，但拋光墊表面的微氣孔具有開口，在平坦化過程中，因為磨屑會沈積在拋光墊的表面開口的氣孔內，故CMP的去垢(Deglazing)乃需要鑽石頂點刺入拋光墊的深度超過拋光墊的平均氣孔大小，才能有效排屑。 Another unobvious fact is that the number of cusps that pierce the polishing pad is inversely proportional to the deepest depth of cutting. After a large number of comparisons with diamond discs used by major semiconductor factories, it has been proved that the cusps of diamond discs used in normal CMP The number of grinding is between 300 and 500, which only accounts for about 5% of the number of tens of thousands of diamonds on the general diamond dish. It can be seen that most of the diamonds do not touch the polishing pad, even if they touch, because the apex of the diamond is smooth The obtuse angle, in fact, does not penetrate, but rather causes the polishing pad to collapse or plastically deform. In addition, the polishing pad usually contains micro-pores to adjust the compression rate and store the slurry. The micro-pores inside the polishing pad are closed, but the micro-pores on the surface of the polishing pad have openings. It is deposited in the pores on the surface of the polishing pad. Therefore, Deglazing of CMP requires the depth of the diamond apex to penetrate the polishing pad to exceed the average pore size of the polishing pad to effectively evacuate chips.
以上問題用PcBN可以解決，由於PcBN可以利用雷射或鑽石磨輪加工，可雕刻出特定的切刃形狀及角度，也能形成特定的尖端高度差分佈，故可依CMP用途客製不同的修整器規格，這樣就可使CMP最佳化，延長修整器及拋光墊的壽命，減少或稀釋磨漿，降低CMP的成本(CoO)；當修整器上有效工作的尖端數量增加時，將增加拋光墊的絨毛，故CMP的拋光速度可以增加，使單機的產能提高。 The above problems can be solved by PcBN. Because PcBN can be processed by laser or diamond grinding wheel, it can engrave a specific cutting edge shape and angle, and also can form a specific distribution of tip height difference. Therefore, different dressers can be customized according to CMP use Specifications, so that CMP can be optimized, extend the life of the dresser and polishing pad, reduce or dilute the slurry, and reduce the cost of CMP (CoO); when the number of tips working effectively on the dresser increases, the polishing pad will increase Lint, so the polishing speed of CMP can be increased, so that the productivity of the single machine is increased.
此外，還有一個不明顯的優點為，在金屬(如銅或鎢)製程時，可在強酸及氧化劑存在下，同時(in-situ dressing)對晶圓進行CMP及修整拋光墊，這種及時的修整也可加快拋光晶圓的速率，由於不過度刺入拋光墊，更能延長修整器及拋光墊的壽命，乃至減少停機更換耗材的次數，這種加乘效果更降低了CMP成本，且增加IC晶圓的產出量。 In addition, there is an unobvious advantage that in the process of metal (such as copper or tungsten), in-situ dressing can be used to perform CMP on the wafer and trim the polishing pad in the presence of strong acids and oxidants. The dressing can also speed up the polishing of the wafer. Because it does not penetrate the polishing pad excessively, it can extend the life of the dresser and polishing pad, and even reduce the number of downtime to replace consumables. This multiplication effect reduces the cost of CMP, and Increase the output of IC wafers.
以雕刻PcBN製造拋光墊修整器的另一個的特點為，使用後的PcBN可以重磨再使用。對磨耗後的尖端進行拋光再形成尖端，這樣就可以重複使用修整器，降低製造成本。目前不論是鑽石磨粒或鑽石鍍膜的修整器，都無法重新加工使用。 Another feature of the polishing pad dresser made by engraving PcBN is that the used PcBN can be reground and used again. The worn tip is polished to form the tip, so that the dresser can be reused, reducing manufacturing costs. At present, no matter whether it is a diamond abrasive grain or a diamond-coated dresser, it cannot be reprocessed.
還有一個鑽石碟的迷思是有關鑽石頂點的角度，鑽石若晶形完整，頂尖多為鈍角，一般靠破裂面形成銳角刺入拋光墊，但不規則形狀的頂點又容易形成殺手鑽石，不僅過度消耗拋光墊，也容易斷裂，造成刮傷晶圓的災難。許多鑽石碟製造者花功夫在選形鑽石，增加成本。更有甚者，使 鑽石尖點向上，殊不知鑽石尖點磨損快速，不如稜線向上，但鑽石的稜線夾角，多為鈍角。立方面之間的夾角為直角，但這種稜線極少，八面體面的夾角約為109度，而立方與八面體之間的夾角約為140度。雕刻PcBN可客製稜線角度，延長修整器及拋光墊的壽命。 There is also a myth about a diamond dish that is related to the angle of the apex of the diamond. If the diamond has a complete crystal shape, the top is mostly obtuse. Generally, the rupture surface forms an acute angle to penetrate the polishing pad, but the irregular shape of the apex is easy to form a killer diamond. Consumption of polishing pads is also easy to break, causing a disaster of scratching the wafer. Many diamond disc makers spend their time selecting diamonds and increasing costs. What's more, the sharp point of the diamond is upward, but it is not known that the sharp point of the diamond wears faster than the ridgeline, but the angle of the ridgeline of the diamond is mostly obtuse. The angle between cubes is a right angle, but there are very few such ridges. The angle between the octahedral plane is about 109 degrees, and the angle between the cube and the octahedron is about 140 degrees. Engraving PcBN can customize the ridge angle to extend the life of the dresser and polishing pad.
實施例1Example 1
在超高壓(>5GPa)下燒結成複數個PcBN研磨片，該PcBN研磨片含cBN的體積比為90%，黏結劑為陶瓷材料。燒結後，以雷射加工切割成10mmx10mm方塊。接著，再以鑽石磨輪在每個PcBN研磨片上磨出100個(呈10×10的矩陣排列)四面尖錐，錐尖之間的間距為1mm。每個尖錐的頂點面角為直角，錐頂高150微米，錐底寬為300微米。上述的鑽石磨輪乃把鑽石磨粒以金屬、陶瓷或樹脂結合劑燒結而成，本例乃以陶瓷結合劑說明。 Sintered into a plurality of PcBN abrasive discs under ultra-high pressure (>5GPa), the volume ratio of the PcBN abrasive discs containing cBN is 90%, and the binder is ceramic material. After sintering, it is cut into 10mmx10mm squares by laser processing. Then, a diamond grinding wheel was used to grind 100 (in a 10×10 matrix arrangement) four-sided pointed cones on each PcBN grinding sheet, and the spacing between the cone tips was 1 mm. The angle of the vertex of each pointed cone is right angle, the height of the top of the cone is 150 microns, and the width of the bottom of the cone is 300 microns. The above-mentioned diamond grinding wheel is formed by sintering diamond abrasive grains with a metal, ceramic, or resin binder. In this example, a ceramic binder is used.
以直徑為108mm的不銹鋼(SS316)為底座，將八片方陣以矽膠蓋布加壓在熱固化樹脂或熱塑性樹脂上，將陣列片固定在底座之外圍，方陣可週邊向外或尖角向外或交互配置。熱壓時，熱固膠或熱塑膠的厚度可以補償PcBN的厚度使PcBN的頂尖高度一致。 Using stainless steel (SS316) with a diameter of 108mm as the base, the eight square arrays are pressed on the thermosetting resin or thermoplastic resin with a silicone cover cloth to fix the array sheet on the periphery of the base, the square array can be outward or sharp outward Or interactive configuration. During hot pressing, the thickness of thermosetting glue or thermoplastic can compensate for the thickness of PcBN so that the top height of PcBN is consistent.
實施例2Example 2
同上例，但PcBN以鑽石砂輪磨成10條直角稜線。以鑽石線鋸垂直於稜線，切出圓弧，使稜線間斷各長約50微米。 Same as the above example, but PcBN is grinded into 10 right angle ridges with diamond wheel. Using a diamond wire saw perpendicular to the ridge, cut a circular arc so that the ridges are each about 50 microns long.
實施例3Example 3
同實施例1或實施例2，但最高頂點40微米範圍內的頂尖數目超過全部頂尖數目之半。 Same as Example 1 or Example 2, but the number of vertices in the highest vertex within 40 microns exceeds half of the total number of vertices.
實施例4Example 4
為降低頂尖高差及移除表面裂紋，組裝的鑽石碟可過壓修整拋光墊使其尖點稍鈍。 In order to reduce the height difference of the top and remove the surface cracks, the assembled diamond disc can be over-pressurized to trim the polishing pad to make the sharp point slightly dull.
以上已將本發明做一詳細說明，惟以上所述者，僅為本發明的一較佳實施例而已，當不能限定本發明實施的範圍。即凡依本發明申請範圍所作的均等變化與修飾等，皆應仍屬本發明的專利涵蓋範圍內。 The present invention has been described in detail above, but the above is only a preferred embodiment of the present invention, which should not limit the scope of the present invention. That is, all changes and modifications made within the scope of the application of the present invention should still fall within the scope of the patent of the present invention.
10‧‧‧拋光墊修整器 10‧‧‧Polishing pad dresser
20‧‧‧PcBN研磨片 20‧‧‧PcBN grinding disc
20a‧‧‧第一PcBN研磨片 20a‧‧‧First PcBN grinding disc
20b‧‧‧第二PcBN研磨片 20b‧‧‧Second PcBN grinding disc
24‧‧‧邊 24‧‧‧
25‧‧‧角 25‧‧‧ corner
50‧‧‧基座 50‧‧‧Dock
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