TW202005021A - Degassing chamber and degassing method - Google Patents

Degassing chamber and degassing method Download PDF

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TW202005021A
TW202005021A TW108101508A TW108101508A TW202005021A TW 202005021 A TW202005021 A TW 202005021A TW 108101508 A TW108101508 A TW 108101508A TW 108101508 A TW108101508 A TW 108101508A TW 202005021 A TW202005021 A TW 202005021A
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wafer
heating
cooling
degassing chamber
item
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TWI754122B (en
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徐剛
張軍
鄭波
馬振國
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大陸商北京北方華創微電子裝備有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Disclosed in the present invention are a degassing chamber and a degassing method. The degassing chamber is provided with a heating device, a cooling device, and a moving support device inside. The cooling device is spaced apart from the heating device and provided opposite to the heating device; and the moving support device is configured to hold a wafer, and can drive the wafer to move between the heating device and the cooling device so as to subject the wafer to heating and cooling respectively. The technical solutions of the degassing chamber and the degassing method disclosed in the present invention can perform a heating process and cooling process in a same chamber, thereby improving the production efficiency. Meanwhile, problems such as poor wafer temperature accuracy, low heating efficiency and low cooling efficiency due to the presence of a dielectric window in the degassing chamber can be avoided.

Description

去氣腔室以及去氣方法Degassing chamber and degassing method

本揭露的實施例涉及一種去氣腔室以及去氣方法。The embodiments of the present disclosure relate to a degassing chamber and a degassing method.

在晶圓的加工過程中，通常需要對晶圓進行加熱和冷卻。例如，在去氣製程中，首先將晶圓加熱到一定溫度以去除水蒸氣和其他揮發性物質，然後再將晶圓冷卻到室溫以方便進行後續製程。In the processing of wafers, it is usually necessary to heat and cool the wafers. For example, in the degassing process, the wafer is first heated to a certain temperature to remove water vapor and other volatile substances, and then the wafer is cooled to room temperature to facilitate the subsequent process.

根據本揭露的實施例，提供一種去氣腔室。該去氣腔室的內部設有加熱裝置、冷卻裝置和移動支撐裝置；其中， 該冷卻裝置與該加熱裝置間隔，且相對設置； 該移動支撐裝置用於承載晶圓，且能夠帶動該晶圓在該加熱裝置和該冷卻裝置之間移動，以分別對該晶圓進行加熱和冷卻。According to an embodiment of the present disclosure, a degassing chamber is provided. The degassing chamber is provided with a heating device, a cooling device, and a mobile support device; wherein, the cooling device is spaced from the heating device and oppositely arranged; the mobile support device is used to carry a wafer and can drive the wafer Move between the heating device and the cooling device to heat and cool the wafer, respectively.

例如，還包括遮蔽件，該遮蔽件是可移動的，且在該移動支撐裝置帶動該晶圓移動至能夠被該加熱裝置加熱的加熱位置時，該遮蔽件能夠移動至使該晶圓暴露於該加熱裝置的第一位置；在該移動支撐裝置帶動該晶圓移動至能夠被該冷卻裝置冷卻的冷卻位置時，該遮蔽件能夠移動至該加熱裝置與該晶圓之間，以遮擋該晶圓的第二位置。For example, it also includes a shield, which is movable, and when the moving support device drives the wafer to a heating position that can be heated by the heating device, the shield can be moved to expose the wafer to The first position of the heating device; when the moving support device drives the wafer to a cooling position that can be cooled by the cooling device, the shield can move between the heating device and the wafer to block the crystal The second position of the circle.

例如，還包括與該去氣腔室的內部連通的保護罩，該遮蔽件在位於該第一位置時，置於該保護罩中。 例如，還包括旋轉驅動機構，用於驅動該遮蔽件在該第一位置與該第二位置之間轉動。For example, it further includes a protective cover communicating with the inside of the degassing chamber, and the shield is placed in the protective cover when it is in the first position. For example, it further includes a rotation driving mechanism for driving the shielding member to rotate between the first position and the second position.

例如，該旋轉驅動機構包括旋轉連杆和旋轉電機，其中， 該旋轉連杆垂直設置在該遮蔽件的靠近該保護罩的一側，且分別與該遮蔽件和該旋轉電機連接； 該旋轉電機用於驅動該旋轉連杆圍繞該旋轉連桿的軸線轉動。For example, the rotation driving mechanism includes a rotation link and a rotation motor, wherein the rotation link is vertically arranged on a side of the shielding member close to the protective cover, and is respectively connected to the shielding member and the rotation motor; It is used to drive the rotating link to rotate around the axis of the rotating link.

例如，該遮蔽件是可折疊或伸展的，且在該移動支撐裝置帶動該晶圓移動至該加熱位置時，該遮蔽件能夠折疊移動至該第一位置；在該移動支撐裝置帶動該晶圓移動至該冷卻位置時，該遮蔽件能夠伸展移動至該第二位置。For example, the shield is foldable or stretchable, and when the mobile support device drives the wafer to the heating position, the shield can be folded and moved to the first position; the mobile support device drives the wafer When moving to the cooling position, the shield can be extended to the second position.

例如，該加熱裝置包括加熱盤，且在該加熱盤中設置有加熱元件；並且，沿從該加熱盤的中心到該加熱盤的邊緣的方向，該加熱元件的排布密度逐漸增加。For example, the heating device includes a heating plate, and a heating element is provided in the heating plate; and, in a direction from the center of the heating plate to the edge of the heating plate, the arrangement density of the heating elements gradually increases.

例如，該加熱元件包括加熱絲，該加熱絲圍繞該加熱盤的軸線纏繞成平面螺旋結構，且沿從該加熱盤的中心到該加熱盤的邊緣的方向，相鄰的兩匝加熱絲之間的間距逐漸減小。For example, the heating element includes a heating wire wound around the axis of the heating plate into a planar spiral structure, and in a direction from the center of the heating plate to the edge of the heating plate, between two adjacent turns of the heating wire The spacing gradually decreases.

根據本揭露的實施例，在該晶圓位於該加熱位置時，該晶圓與該加熱盤相對的兩個表面之間具有預設間距。According to the embodiment of the present disclosure, when the wafer is in the heating position, there is a predetermined distance between the two surfaces of the wafer and the heating plate opposite to each other.

例如，該預設間距的取值範圍在0.05mm-0.15mm。For example, the value range of the preset pitch is 0.05mm-0.15mm.

例如，該冷卻裝置包括冷卻盤，且在該冷卻盤中設置有用於輸送冷卻介質的晶圓冷卻通道。For example, the cooling device includes a cooling tray, and a wafer cooling channel for transporting a cooling medium is provided in the cooling tray.

例如，該加熱裝置和該冷卻裝置沿垂直方向設置，且該加熱裝置位於該冷卻裝置的上方。For example, the heating device and the cooling device are arranged in a vertical direction, and the heating device is located above the cooling device.

例如，該移動支撐裝置包括至少三個支撐針和升降驅動機構，其中， 該至少三個支撐柱均垂直穿設於該冷卻裝置，用於共同將該晶圓支撐在該加熱裝置與該冷卻裝置之間； 該升降驅動機構用於驅動該至少三個支撐柱上升或下降。For example, the mobile support device includes at least three support pins and an elevating drive mechanism, wherein the at least three support columns are vertically penetrated by the cooling device for supporting the wafer on the heating device and the cooling device together The lifting drive mechanism is used to drive the at least three support columns up or down.

例如，至少在該去氣腔室的靠近該加熱裝置的腔室壁中設置有用於輸送冷卻介質的腔室冷卻通道。For example, at least a chamber cooling channel for conveying a cooling medium is provided in the chamber wall of the degassing chamber close to the heating device.

根據本揭露的實施例，還提供一種去氣方法，其在本揭露的實施例提供的去氣腔室內進行，該方法包括： 採用該移動支撐裝置承載晶圓，且將該晶圓移動至能夠被該加熱裝置加熱的加熱位置，以對該晶圓進行加熱； 採用該移動支撐裝置將該晶圓移動至能夠被該冷卻裝置冷卻的冷卻位置，以對該晶圓進行冷卻。According to an embodiment of the present disclosure, there is also provided a degassing method, which is performed in the degassing chamber provided by the embodiment of the present disclosure. The method includes: using the mobile support device to carry a wafer, and moving the wafer to A heating position heated by the heating device to heat the wafer; using the moving support device to move the wafer to a cooling position that can be cooled by the cooling device to cool the wafer.

例如，該去氣腔室包括遮蔽件，該遮蔽件是可移動的；並且 該方法進一步包括： 在該移動支撐裝置帶動該晶圓移動至該加熱位置時，將該遮蔽件移動至使該晶圓暴露於該加熱裝置的第一位置； 在該移動支撐裝置帶動該晶圓移動至該冷卻位置時，將該遮蔽件移動至該加熱裝置與該晶圓之間，以遮擋該晶圓的第二位置。For example, the degassing chamber includes a shield, and the shield is movable; and the method further includes: when the moving support device drives the wafer to the heating position, moving the shield to the crystal The circle is exposed to the first position of the heating device; when the moving support device drives the wafer to the cooling position, the shield is moved between the heating device and the wafer to block the first position of the wafer Second position.

為使本揭露實施例的目的、技術方案和優點更加清楚，下面將結合本揭露實施例的附圖，對本揭露實施例的技術方案進行清楚、完整地描述。顯然，所描述的實施例是本揭露的一部分實施例，而不是全部的實施例。基於所描述的本揭露的實施例，本領域普通技術人員在無需創造性勞動的前提下所獲得的所有其他實施例，都屬於本揭露保護的範圍。In order to make the purpose, technical solution and advantages of the disclosed embodiment clearer, the technical solution of the disclosed embodiment will be described clearly and completely in conjunction with the drawings of the disclosed embodiment. Obviously, the described embodiments are a part of the embodiments of the present disclosure, but not all the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by a person of ordinary skill in the art without creative efforts fall within the scope of protection of the present disclosure.

除非另外定義，本揭露使用的技術術語或者科學術語應當為本揭露所屬領域內具有一般技能的人士所理解的通常意義。本揭露中使用的“第一”、“第二”以及類似的詞語並不表示任何順序、數量或者重要性，而只是用來區分不同的組成部分。“包括”或者“包含”等類似的詞語意指出現該詞前面的元件或者物件涵蓋出現在該詞後面列舉的元件或者物件及其等同，而不排除其他元件或者物件。“連接”或者“相連”等類似的詞語並非限定於物理的或者機械的連接，而是可以包括電性的連接，不管是直接的還是間接的。“上”、“下”、“左”、“右”等僅用於表示相對位置關係，當被描述對象的絕對位置改變後，則該相對位置關係也可能相應地改變。Unless otherwise defined, the technical or scientific terms used in this disclosure shall be the common meaning understood by persons with general skills in the field to which this disclosure belongs. The words "first", "second" and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similar words such as "include" or "include" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, but do not exclude other elements or objects. "Connected" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right", etc. are only used to indicate the relative positional relationship. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

第1圖示出了一種去氣腔室。請參閱第1圖，去氣腔室101具有透明介質窗103，在去氣腔室101外部且靠近透明介質窗10的位置處設置有加熱光源102，在去氣腔室101內部設置有冷卻裝置104，晶圓105放置在冷卻裝置104上。在加熱過程中，加熱光源102透過透明介質窗103向晶圓105輻射熱量，以對晶圓105進行加熱；在加熱完成之後，開啟冷卻裝置104以對晶圓105進行冷卻。Figure 1 shows a degassing chamber. Please refer to FIG. 1, the degassing chamber 101 has a transparent medium window 103, a heating light source 102 is provided outside the degassing chamber 101 and close to the transparent medium window 10, and a cooling device is provided inside the degassing chamber 101 104. The wafer 105 is placed on the cooling device 104. During the heating process, the heating light source 102 radiates heat to the wafer 105 through the transparent medium window 103 to heat the wafer 105; after the heating is completed, the cooling device 104 is turned on to cool the wafer 105.

第1圖所示的去氣腔室存在以下問題： 其一，在加熱的過程中，晶圓105的表面溫度無法直接獲得，只能在進行正式的加熱之前，通過事先實驗間接測得，因此不容易發現晶圓105表面溫度隨去氣腔室101內部條件變化而變化的情況，從而導致晶圓的溫度精度較差。The degassing chamber shown in Figure 1 has the following problems: First, during the heating process, the surface temperature of the wafer 105 cannot be obtained directly, and can only be measured indirectly through prior experiments before formal heating, so It is not easy to find that the surface temperature of the wafer 105 changes with the change of the internal conditions of the degassing chamber 101, resulting in poor temperature accuracy of the wafer.

其二，在加熱過程中晶圓105會揮發出物質，揮發出的物質會沉積在透明介質窗103上並阻擋一部分熱量傳遞，從而降低了加熱效率。Second, during the heating process, the wafer 105 will evaporate substances, and the volatile substances will be deposited on the transparent dielectric window 103 and block part of the heat transfer, thereby reducing the heating efficiency.

其三，透明介質窗103會由於加熱光源102的照射而溫度升高，而在冷卻過程中透明介質窗103仍然會向晶圓105輻射熱量，導致冷卻效率降低。Third, the temperature of the transparent dielectric window 103 will increase due to the irradiation of the heating light source 102, and the transparent dielectric window 103 will still radiate heat to the wafer 105 during the cooling process, resulting in a decrease in cooling efficiency.

第2圖示出了另一種去氣腔室。請參閱第2圖，加熱裝置202設置在腔室201內以對晶圓203進行加熱。但是，第2圖所示的去氣腔室只能對晶圓進行加熱，而不具有冷卻功能，因此，需要將晶圓203轉移到其他設備才能進行冷卻，從而導致生產效率低下。Figure 2 shows another degassing chamber. Please refer to FIG. 2, the heating device 202 is disposed in the chamber 201 to heat the wafer 203. However, the degassing chamber shown in FIG. 2 can only heat the wafer without cooling function. Therefore, the wafer 203 needs to be transferred to other equipment for cooling, resulting in low production efficiency.

為了解決上述問題，根據本揭露的實施例，提供一種去氣腔室。該去氣腔室的內部設有加熱裝置、冷卻裝置和移動支撐裝置。其中，冷卻裝置與加熱裝置間隔，且相對設置；移動支撐裝置用於承載晶圓，且能夠帶動晶圓在加熱裝置和冷卻裝置之間移動，以分別對晶圓進行加熱和冷卻。In order to solve the above problems, according to the embodiments of the present disclosure, a degassing chamber is provided. The degassing chamber is provided with a heating device, a cooling device and a moving support device. Among them, the cooling device is spaced from the heating device and is relatively arranged; the mobile support device is used to carry the wafer, and can drive the wafer to move between the heating device and the cooling device to respectively heat and cool the wafer.

根據本揭露的實施例，加熱裝置和冷卻裝置均位於去氣腔室內，並且借助移動支撐裝置帶動晶圓在冷卻裝置和加熱裝置的加熱裝置之間移動，可以分別對晶圓進行加熱和冷卻，從而可以在同一腔室內完成加熱製程和冷卻製程，進而提高了生產效率。According to the embodiments of the present disclosure, the heating device and the cooling device are both located in the degassing chamber, and the wafer is moved between the cooling device and the heating device of the heating device by the moving support device, and the wafer can be heated and cooled separately. Therefore, the heating process and the cooling process can be completed in the same chamber, thereby improving the production efficiency.

另外，根據本揭露的實施例，通過將加熱裝置設置在腔室內部，可以使加熱裝置直接，且近距離向晶圓輻射熱量，而無需透過設置在加熱裝置和晶圓之間的用於隔離真空環境與大氣環境的部件（例如，第1圖所示的介質窗103），從而可以避免第1圖所示的去氣腔室中由於介質窗103的存在而帶來的晶圓溫度精度較差、加熱效率低、冷卻效率低等的問題。In addition, according to the embodiment of the present disclosure, by arranging the heating device inside the chamber, the heating device can be radiated directly to the wafer at a short distance without having to pass through the isolation between the heating device and the wafer Vacuum environment and atmospheric environment components (for example, the dielectric window 103 shown in Figure 1), so that the wafer temperature accuracy in the degassing chamber shown in Figure 1 due to the presence of the dielectric window 103 can be avoided , Low heating efficiency, low cooling efficiency, etc.

下面，將結合附圖對根據本揭露實施例的去氣腔室進行詳細的說明。第3（a）圖示出了根據本揭露實施例的去氣腔室。如第3（a）圖所示，根據本揭露實施例的去氣腔室10的內部設有加熱裝置20、冷卻裝置30和移動支撐裝置80。其中，冷卻裝置30與加熱裝置20間隔，且相對設置；移動支撐裝置80用於承載晶圓50，且能夠帶動晶圓50在加熱裝置20和冷卻裝置30之間移動，以分別對晶圓50進行加熱和冷卻。Hereinafter, the degassing chamber according to the embodiment of the present disclosure will be described in detail with reference to the drawings. Figure 3(a) shows a degassing chamber according to an embodiment of the present disclosure. As shown in FIG. 3( a ), the degassing chamber 10 according to the embodiment of the present disclosure is provided with a heating device 20, a cooling device 30 and a moving support device 80. Among them, the cooling device 30 is spaced from the heating device 20 and is relatively arranged; the mobile support device 80 is used to carry the wafer 50 and can drive the wafer 50 to move between the heating device 20 and the cooling device 30 to respectively treat the wafer 50 Perform heating and cooling.

加熱裝置20和冷卻裝置30均位於去氣腔室10內部，並且借助移動支撐裝置80帶動晶圓50在冷卻裝置30和加熱裝置20之間移動，分別對晶圓50進行加熱和冷卻，從而可以在同一去氣腔室10內完成加熱製程和冷卻製程，進而提高了生產效率。另外，通過將加熱裝置20設置在去氣腔室10內部，可以使加熱裝置20直接，且近距離向晶圓輻射熱量，而無需透過設置加熱裝置20和晶圓50之間的用於隔離真空環境與大氣環境的部件（例如，第1圖所示的介質窗103），從而可以避免第1圖所示的去氣腔室中由於介質窗103的存在而帶來的晶圓溫度精度較差、加熱效率低、冷卻效率低等的問題。Both the heating device 20 and the cooling device 30 are located inside the degassing chamber 10, and the wafer 50 is moved between the cooling device 30 and the heating device 20 by the moving support device 80 to respectively heat and cool the wafer 50, so that The heating process and the cooling process are completed in the same degassing chamber 10, thereby improving production efficiency. In addition, by arranging the heating device 20 inside the degassing chamber 10, the heating device 20 can be radiated directly to the wafer at a short distance, without having to pass through the vacuum for isolation between the heating device 20 and the wafer 50 Environmental and atmospheric components (for example, the dielectric window 103 shown in FIG. 1), so that the wafer temperature accuracy in the degassing chamber shown in FIG. 1 due to the presence of the dielectric window 103 can be avoided. Problems such as low heating efficiency and low cooling efficiency.

第3（b）圖示出了設置在根據本揭露實施例的去氣腔室中的加熱裝置的加熱盤的截面示意圖。如第3（b）圖所示，根據本揭露的實施例，加熱裝置20包括加熱盤20’，且在加熱盤20’中設有加熱元件21。並且，沿從加熱盤20’的中心到加熱盤20’的邊緣的方向，加熱元件21的排布密度逐漸增加。在此情形下，一方面，加熱盤20’作為盤狀結構可以實現較大範圍的面加熱，另一方面，通過對加熱元件21的排布密度進行如上設置可以補償加熱盤20’邊緣與中心之間的熱量散失速度差異；因此，進一步提高了加熱過程中的溫度均勻性。FIG. 3(b) shows a schematic cross-sectional view of the heating plate of the heating device provided in the degassing chamber according to the embodiment of the present disclosure. As shown in FIG. 3(b), according to the embodiment of the present disclosure, the heating device 20 includes a heating plate 20', and a heating element 21 is provided in the heating plate 20'. Also, the arrangement density of the heating elements 21 gradually increases in the direction from the center of the heating plate 20' to the edge of the heating plate 20'. In this case, on the one hand, the heating plate 20' as a disk-shaped structure can achieve a large area of surface heating, on the other hand, by setting the arrangement density of the heating element 21 as described above, the edge and center of the heating plate 20' can be compensated The difference in the rate of heat loss between; therefore, the temperature uniformity during heating is further improved.

在本實施例中，加熱元件21包括加熱絲，該加熱絲圍繞加熱盤20’的軸線（即，第3（b）圖示出的軸線O-O’）纏繞成平面螺旋結構，且沿從加熱盤20’的中心到加熱盤20’的邊緣的方向，相鄰的兩匝加熱絲之間的間距逐漸減小。需要說明的是，在第3（a）圖和第3（b）圖中，加熱元件21的結構、截面形狀和數量均是示例性的，本揭露實施例不侷限於此，在實際應用中，可以根據實際需要選擇加熱元件21的結構、截面形狀和數量。In this embodiment, the heating element 21 includes a heating wire wound around the axis of the heating plate 20' (ie, the axis O-O' shown in FIG. 3(b)) into a planar spiral structure, and extending from In the direction from the center of the heating plate 20' to the edge of the heating plate 20', the distance between two adjacent turns of heating wire is gradually reduced. It should be noted that, in FIGS. 3(a) and 3(b), the structure, cross-sectional shape, and number of the heating element 21 are exemplary, and the embodiments of the present disclosure are not limited thereto, and in practical applications The structure, cross-sectional shape and number of the heating element 21 can be selected according to actual needs.

需要說明的是，本揭露的實施例對去氣腔室10的具體形狀不進行任何限制，只要去氣腔室10可以容納加熱裝置10和冷卻裝置20即可。It should be noted that the embodiments of the present disclosure do not limit the specific shape of the degassing chamber 10 as long as the degassing chamber 10 can accommodate the heating device 10 and the cooling device 20.

例如，如第3（a）圖所示，對於加熱盤20’而言，至少其面向晶圓50的表面為平面，從而加熱盤20’可以成為均勻性優良的面加熱源。例如，加熱盤20’的面向晶圓50的表面的面積大於或等於晶圓50的表面面積，以確保加熱效率和加熱均勻性。例如，為了方便加工，加熱盤20’的面向晶圓50的表面以及加熱盤20’的遠離晶圓50的表面均為平面。For example, as shown in FIG. 3(a), at least the surface of the heating plate 20' facing the wafer 50 is flat, so that the heating plate 20' can be a surface heating source with excellent uniformity. For example, the area of the surface of the heating disc 20' facing the wafer 50 is greater than or equal to the surface area of the wafer 50 to ensure heating efficiency and heating uniformity. For example, for ease of processing, the surface of the heating plate 20' facing the wafer 50 and the surface of the heating plate 20' facing away from the wafer 50 are flat.

例如，如第3（a）圖所示，冷卻裝置30包括冷卻盤30’，且在冷卻盤30’中設置有用於輸送冷卻介質的晶圓冷卻通道（圖中未示出），以對晶圓50進行冷卻。該冷卻介質可以為冷卻水、冷卻液、液氮等。For example, as shown in FIG. 3(a), the cooling device 30 includes a cooling tray 30', and a wafer cooling channel (not shown in the figure) for conveying a cooling medium is provided in the cooling tray 30' Circle 50 is cooled. The cooling medium may be cooling water, cooling liquid, liquid nitrogen, or the like.

例如，對於冷卻盤30’而言，至少其面向晶圓50的表面為平面，從而冷卻盤30’可以成為均勻性優良的面冷卻源。例如，冷卻盤30’的面向晶圓50的表面的面積大於或等於晶圓50的表面面積，以確保冷卻效率和冷卻均勻性。例如，為了方便加工，冷卻盤30’的面向晶圓50的表面以及冷卻盤30’的遠離晶圓50的表面均為平面。For example, for the cooling plate 30', at least its surface facing the wafer 50 is flat, so that the cooling plate 30' can be a surface cooling source with excellent uniformity. For example, the area of the surface of the cooling tray 30' facing the wafer 50 is greater than or equal to the surface area of the wafer 50 to ensure cooling efficiency and cooling uniformity. For example, for ease of processing, the surface of the cooling tray 30' facing the wafer 50 and the surface of the cooling tray 30' facing away from the wafer 50 are flat.

例如，如第3（a）圖所示，加熱盤20’固定在去氣腔室10的頂壁上並且冷卻盤30’固定在去氣腔室10的底壁上，也就是，加熱盤20’和冷卻盤30’沿垂直方向設置，且加熱盤20’位於冷卻盤30’的上方；這樣，移動支撐裝置80可以通過作升降運動來使晶圓靠近加熱盤20’或冷卻盤30’，從而可以更方便的實現分別對晶圓的加熱和冷卻。然而，本揭露的實施例不限於此，可以根據需要對冷卻盤30’和加熱盤20’之間的位置關係進行其他設置。For example, as shown in FIG. 3(a), the heating plate 20' is fixed to the top wall of the degassing chamber 10 and the cooling plate 30' is fixed to the bottom wall of the degassing chamber 10, that is, the heating plate 20 'And the cooling plate 30' are arranged in a vertical direction, and the heating plate 20' is located above the cooling plate 30'; in this way, the mobile support device 80 can move the wafer close to the heating plate 20' or the cooling plate 30' by performing a lifting movement Therefore, it is more convenient to realize the heating and cooling of the wafer separately. However, the embodiments of the present disclosure are not limited to this, and the positional relationship between the cooling tray 30' and the heating tray 20' may be set according to need.

例如，如第3（a）圖所示，加熱盤20’通過第一連接件61固定在去氣腔室10的頂壁上，冷卻盤30’通過第二連接件62固定在去氣腔室10的底壁上。本揭露的實施例對第一連接件61和第二連接件62的結構不進行任何限制，只要第一連接件61能夠穩定地將加熱盤20’固定到去氣腔室10的頂壁且第二連接件62能夠穩定地將冷卻盤30’固定到去氣腔室10的底壁即可。For example, as shown in FIG. 3(a), the heating plate 20' is fixed on the top wall of the degassing chamber 10 through the first connecting member 61, and the cooling plate 30' is fixed on the degassing chamber through the second connecting member 62. 10 on the bottom wall. The embodiments of the present disclosure do not limit the structure of the first connector 61 and the second connector 62 as long as the first connector 61 can stably fix the heating plate 20' to the top wall of the degassing chamber 10 and The two connecting members 62 can stably fix the cooling plate 30 ′ to the bottom wall of the degassing chamber 10.

例如，晶圓50為任何需要進行去氣處理的晶圓，例如為矽晶圓，本揭露實施例對此不進行限制。例如，晶圓50包括襯底以及形成在襯底上的膜層或圖案。例如，晶圓50僅包括襯底，襯底上不具有其他膜層或圖案。例如，在將晶圓50放置入去氣腔室10時，晶圓50的形成有膜層或圖案的表面或者後續需要形成膜層或圖案的表面朝上，即朝向加熱裝置20。For example, the wafer 50 is any wafer that needs to be degassed, such as a silicon wafer, which is not limited in the embodiment of the present disclosure. For example, the wafer 50 includes a substrate and a film layer or pattern formed on the substrate. For example, the wafer 50 includes only a substrate, and there are no other layers or patterns on the substrate. For example, when the wafer 50 is placed in the degassing chamber 10, the surface of the wafer 50 on which the film layer or pattern is formed or the surface on which the film layer or pattern needs to be formed subsequently faces upward, that is, faces the heating device 20.

根據本揭露實施例的去氣腔室10，還包括遮蔽件，其是可移動的。具體地，第4（a）圖和第4（b）圖以及第5（a）圖和第5（b）圖分別示出了根據本揭露實施例的去氣腔室，其中第4（a）圖和第5（a）圖示出了加熱狀態下遮蔽件40的位置，第4（b）圖和第5（b）圖示出了冷卻狀態下遮蔽件40的位置，第4（a）圖和第4（b）圖所示的遮蔽件在結構上不同於第5（a）圖和第5（b）圖所示的遮蔽件。The degassing chamber 10 according to the embodiment of the present disclosure further includes a shield, which is movable. Specifically, FIGS. 4(a) and 4(b) and FIGS. 5(a) and 5(b) respectively show the degassing chamber according to the embodiment of the present disclosure, of which the 4(a) ) And FIG. 5(a) show the position of the shield 40 in the heated state, and FIGS. 4(b) and 5(b) show the position of the shield 40 in the cooled state, and the fourth (a ) The shield shown in FIGS. 4 and 4(b) differs in structure from the shield shown in FIGS. 5(a) and 5(b).

例如，根據本揭露實施例的去氣腔室10具有加熱狀態和冷卻狀態，在加熱狀態下，移動支撐裝置80帶動晶圓50移動至能夠被加熱裝置20加熱的加熱位置（第4（a）圖和第5（a）圖示出的晶圓50所在的位置）；在冷卻狀態下，移動支撐裝置80帶動晶圓50移動至能夠被冷卻裝置30冷卻的冷卻位置（第4（b）圖和第5（b）圖示出的晶圓50所在的位置）。For example, the degassing chamber 10 according to the embodiment of the present disclosure has a heating state and a cooling state. In the heating state, the moving support device 80 drives the wafer 50 to a heating position that can be heated by the heating device 20 (No. 4(a)) Figure and Figure 5 (a) shows the position of the wafer 50); in the cooled state, the mobile support device 80 drives the wafer 50 to a cooling position that can be cooled by the cooling device 30 (Figure 4 (b) And the position of the wafer 50 shown in FIG. 5(b)).

而且，在晶圓50位於上述加熱位置時，遮蔽件40能夠移動至使晶圓50暴露於加熱盤20’的第一位置，即如第4（a）圖所示和第5（a）圖所示的遮蔽件40所在位置。此時遮蔽件40不會遮擋加熱盤20’輻射向晶圓50的熱量。Moreover, when the wafer 50 is located at the above heating position, the shielding member 40 can be moved to the first position that exposes the wafer 50 to the heating plate 20', as shown in FIGS. 4(a) and 5(a) The position of the shield 40 shown. At this time, the shielding member 40 does not shield the heat radiated to the wafer 50 by the heating plate 20'.

在晶圓50位於上述冷卻位置時，遮蔽件40能夠移動至加熱盤20’與晶圓50之間，以遮擋晶圓50的第二位置，即如第4（b）圖和第5（b）圖所示的遮蔽件40所在位置。這樣，在進行冷卻製程時，遮蔽件40能夠阻擋加熱裝置20向晶圓50輻射熱量。When the wafer 50 is in the above-mentioned cooling position, the shielding member 40 can move between the heating plate 20 ′ and the wafer 50 to shield the second position of the wafer 50, that is, as shown in FIGS. 4( b) and 5( b ) The position of the shielding member 40 shown in the figure. In this way, during the cooling process, the shield 40 can block the heating device 20 from radiating heat to the wafer 50.

例如，在晶圓50位於上述加熱位置時，晶圓50和加熱盤20’直接接觸。或者，在晶圓50位於上述加熱位置時，晶圓50與加熱盤20’彼此靠近而不直接接觸，即，晶圓50與加熱盤20’相對的兩個表面之間具有預設間距。例如，該預設間距的取值範圍在0.05mm-0.15mm，進一步地例如約為0.1mm。這樣一來，晶圓50既可以距離加熱盤20’足夠近而被充分加熱，又可以不妨礙晶圓50中的水蒸氣或其他揮發性物質的揮發，並且在晶圓50的表面形成有圖案的情形下可以防止這些圖案與加熱盤20’直接接觸而受到破壞。For example, when the wafer 50 is located at the above heating position, the wafer 50 and the heating plate 20' are in direct contact. Alternatively, when the wafer 50 is at the above heating position, the wafer 50 and the heating plate 20' are close to each other without direct contact, that is, the two surfaces of the wafer 50 and the heating plate 20' opposite to each other have a predetermined distance. For example, the value range of the preset distance is 0.05mm-0.15mm, and further, for example, about 0.1mm. In this way, the wafer 50 can be sufficiently close to the heating plate 20 ′ to be fully heated, and it can not hinder the evaporation of water vapor or other volatile substances in the wafer 50, and a pattern is formed on the surface of the wafer 50 In this case, these patterns can be prevented from being damaged by direct contact with the heating plate 20'.

例如，如第4（a）圖和第5（a）圖所示，在晶圓50位於上述加熱位置時，晶圓50與加熱盤20’之間不具有任何部件，來自加熱盤20’的熱量可以直接輻射向晶圓50。For example, as shown in FIGS. 4(a) and 5(a), when the wafer 50 is located at the above heating position, there is no component between the wafer 50 and the heating plate 20', and the The heat can be radiated directly to the wafer 50.

例如，在晶圓50位於上述冷卻位置時，遮蔽件40在加熱盤20’上的正投影完全覆蓋加熱盤20’，這樣一來遮蔽件40可以完全遮擋加熱盤20’，以有效地防止在冷卻製程中加熱裝置20向晶圓50輻射熱量。For example, when the wafer 50 is in the cooling position, the orthographic projection of the shielding member 40 on the heating plate 20' completely covers the heating plate 20', so that the shielding element 40 can completely block the heating plate 20' to effectively prevent The heating device 20 radiates heat to the wafer 50 during the cooling process.

例如，在晶圓50位於上述冷卻位置時，晶圓50被放置在冷卻裝置30的冷卻盤30’上，即與冷卻盤30’直接接觸。這樣，可以提高冷卻效率和冷卻均勻性。For example, when the wafer 50 is in the above-mentioned cooling position, the wafer 50 is placed on the cooling tray 30' of the cooling device 30, that is, directly in contact with the cooling tray 30'. In this way, cooling efficiency and cooling uniformity can be improved.

例如，遮蔽件40可以由能減少熱量傳播的材料形成。通常採用不銹鋼來製造各種生產設備，諸如根據本揭露實施例的去氣腔室。例如，遮蔽件40也由不銹鋼形成，以簡化材料選擇和材料儲備工序，從而簡化製造製程。For example, the shield 40 may be formed of a material that can reduce the spread of heat. Stainless steel is generally used to manufacture various production equipment, such as a degassing chamber according to an embodiment of the present disclosure. For example, the shielding member 40 is also formed of stainless steel to simplify the material selection and material storage process, thereby simplifying the manufacturing process.

例如，遮蔽件40可以由隔熱材料形成，例如熱反射材料、熱絕緣材料等。熱反射材料例如為表面鍍有高反射率金屬層的板材。熱絕緣材料例如為熱絕緣樹脂。熱絕緣樹脂例如為酚醛樹脂、聚氨酯樹脂等。For example, the shield 40 may be formed of a heat insulating material, such as a heat reflective material, a heat insulating material, or the like. The heat reflective material is, for example, a plate plated with a high-reflectivity metal layer on the surface. The thermal insulation material is, for example, thermal insulation resin. The heat insulating resin is, for example, phenol resin, polyurethane resin, or the like.

例如，如第4（a）圖和第4（b）圖所示，遮蔽件40是剛性的，去氣腔室10包括與其內部連通的保護罩41。例如，在遮蔽件40位於上述第一位置時，遮蔽件40置於保護罩41中。For example, as shown in FIGS. 4(a) and 4(b), the shield 40 is rigid, and the degassing chamber 10 includes a protective cover 41 communicating with the inside thereof. For example, when the shielding member 40 is located at the above-mentioned first position, the shielding member 40 is placed in the protective cover 41.

例如，保護罩41與去氣腔室10一體形成。例如，保護罩41與去氣腔室10分開形成，並通過螺栓等連接件連接在一起。For example, the protective cover 41 is formed integrally with the degassing chamber 10. For example, the protective cover 41 is formed separately from the degassing chamber 10 and connected together by a connecting member such as a bolt.

例如，如第4（a）圖和第4（b）圖所示，根據本揭露實施例的去氣腔室10還包括：旋轉驅動機構，用於驅動遮蔽件40在上述第一位置與第二位置之間轉動。For example, as shown in FIGS. 4(a) and 4(b), the degassing chamber 10 according to the embodiment of the present disclosure further includes: a rotation driving mechanism for driving the shielding member 40 at the first position and the Turn between the two positions.

例如，旋轉驅動機構包括旋轉連桿42和旋轉電機43，其中，旋轉連桿42垂直設置在遮蔽件40的靠近保護罩41的一側，且分別與遮蔽件40和旋轉電機43連接；旋轉電機43用於驅動旋轉連桿42旋轉圍繞其軸線轉動。在旋轉電機43的驅動下，旋轉連桿42帶動遮蔽件40轉動至移入保護罩41中的上述第一位置或者從保護罩41移出至上述第二位置。For example, the rotation driving mechanism includes a rotation link 42 and a rotation motor 43, wherein the rotation link 42 is vertically arranged on the side of the shield 40 near the protective cover 41, and is respectively connected to the shield 40 and the rotation motor 43; 43 is used to drive the rotary link 42 to rotate around its axis. Driven by the rotating electric machine 43, the rotary link 42 drives the shield 40 to the first position moved into the protective cover 41 or moved out from the protective cover 41 to the second position.

需要說明的是，使遮蔽件40發生移動的機構並不限於如上該的旋轉連桿42和驅動電機43，任何使遮蔽件40在遮蔽件40在第一位置與第二位置之間的驅動機構都屬於本揭露實施例的保護範圍。It should be noted that the mechanism for moving the shielding member 40 is not limited to the rotating link 42 and the driving motor 43 as described above. Any driving mechanism for the shielding member 40 between the first position and the second position of the shielding member 40 All belong to the protection scope of the disclosed embodiments.

例如，如第5（a）圖和第5（b）圖所示，遮蔽件40是可折疊或伸展的，即，遮蔽件40是能夠在折疊狀態和伸展狀態之間轉換。而且，在晶圓50位於上述加熱位置時，遮蔽件40能夠折疊移動至上述第一位置，即，遮蔽件40處於折疊狀態，以使晶圓50暴露於加熱盤20’；在晶圓50位於上述冷卻位置時，遮蔽件40能夠伸展移動至上述第二位置，即，遮蔽件40處於伸展狀態，以在加熱盤20’與晶圓50之間遮擋晶圓50。For example, as shown in FIGS. 5(a) and 5(b), the shield 40 is foldable or stretchable, that is, the shield 40 is capable of switching between a folded state and an extended state. Moreover, when the wafer 50 is at the heating position, the shield 40 can be folded and moved to the first position, that is, the shield 40 is in a folded state, so that the wafer 50 is exposed to the heating plate 20 ′; In the cooling position, the shielding member 40 can be extended to the second position, that is, the shielding member 40 is in an extended state to shield the wafer 50 between the heating plate 20 ′ and the wafer 50.

例如，如第4（a）圖和第4（b）圖以及第5（a）圖和第5（b）圖所示，加熱裝置20還包括與加熱元件21連接的線路22。例如，加熱元件21包括電阻加熱元件（例如，加熱絲），在此情形下，與加熱元件21連接的線路22為向電阻加熱元件傳輸電流的電線。例如，加熱元件21包括液體加熱元件，在此情形下，與加熱元件21連接的線路22為向液體加熱元件傳輸高溫液體的輸液管。For example, as shown in FIGS. 4(a) and 4(b) and FIGS. 5(a) and 5(b), the heating device 20 further includes a line 22 connected to the heating element 21. For example, the heating element 21 includes a resistance heating element (for example, a heating wire), and in this case, the line 22 connected to the heating element 21 is an electric wire that transmits current to the resistance heating element. For example, the heating element 21 includes a liquid heating element. In this case, the line 22 connected to the heating element 21 is an infusion tube that transfers high-temperature liquid to the liquid heating element.

例如，如第4（a）圖和第4（b）圖以及第5（a）圖和第5（b）圖所示，第一連接件61是空心的，與加熱元件21連接的線路22穿過第一連接件61而被引導到去氣腔室10之外。在此情形下，第一連接件61兼具固定加熱盤20’和引導線路22的作用，可以簡化去氣腔室10的結構。另外，第一連接件61可以將去氣腔室10的內部環境與外部的大氣環境隔離開。For example, as shown in FIGS. 4(a) and 4(b) and FIGS. 5(a) and 5(b), the first connector 61 is hollow, and the line 22 connected to the heating element 21 It is led out of the degassing chamber 10 through the first connection 61. In this case, the first connector 61 has the function of fixing the heating plate 20' and the guide line 22, which can simplify the structure of the degassing chamber 10. In addition, the first connector 61 may isolate the internal environment of the degassing chamber 10 from the external atmospheric environment.

例如，如第4（a）圖和第4（b）圖以及第5（a）圖和第5（b）圖所示，加熱裝置20還包括測溫元件23和與測溫元件23連接的引線24。例如，測溫元件23為熱電偶。加熱裝置20包括測溫元件23，從而可以即時地對加熱盤20’的溫度進行監測，以利於即時且準確地控制加熱溫度。需要說明的是，圖中僅在加熱盤20’的中心位置設置了一個測溫元件23；然而，本揭露實施例不限於此，可以針對加熱盤20’的不同位置設置多個測溫元件23，並根據多個測溫元件23的監測結果對加熱盤20’的不同位置分別進行相應的溫度調整，實現均勻加熱。For example, as shown in FIGS. 4(a) and 4(b) and FIGS. 5(a) and 5(b), the heating device 20 further includes a temperature measuring element 23 and a temperature measuring element 23 Lead 24. For example, the temperature measuring element 23 is a thermocouple. The heating device 20 includes a temperature measuring element 23, so that the temperature of the heating plate 20' can be monitored in real time, so as to facilitate real-time and accurate control of the heating temperature. It should be noted that in the figure, only one temperature measuring element 23 is provided at the central position of the heating plate 20'; however, the embodiment of the present disclosure is not limited thereto, and multiple temperature measuring elements 23 may be provided for different positions of the heating plate 20' And, according to the monitoring results of the plurality of temperature measuring elements 23, the corresponding temperature adjustments are respectively performed on different positions of the heating plate 20' to achieve uniform heating.

例如，如第4（a）圖和第4（b）圖以及第5（a）圖和第5（b）圖所示，與測溫元件23連接的引線24穿過第一連接件61而被引導到去氣腔室10之外，以簡化去氣腔室10的結構。For example, as shown in FIGS. 4(a) and 4(b) and FIGS. 5(a) and 5(b), the lead 24 connected to the temperature measuring element 23 passes through the first connector 61 and It is guided out of the degassing chamber 10 to simplify the structure of the degassing chamber 10.

例如，如第4（a）圖和第4（b）圖以及第5（a）圖和第5（b）圖所示，冷卻盤30’中設置有用於輸送冷卻介質的晶圓冷卻通道31，且冷卻裝置30還包括與晶圓冷卻通道31連接的線路32。例如，冷卻介質可以為冷卻水、冷卻液、液氮等。在此情形下，與晶圓冷卻通道31連接的線路32為向晶圓冷卻通道31傳輸冷卻介質的輸送管。For example, as shown in FIGS. 4(a) and 4(b) and FIGS. 5(a) and 5(b), the cooling tray 30' is provided with a wafer cooling channel 31 for conveying a cooling medium The cooling device 30 further includes a circuit 32 connected to the wafer cooling channel 31. For example, the cooling medium may be cooling water, cooling liquid, liquid nitrogen, or the like. In this case, the line 32 connected to the wafer cooling channel 31 is a conveying pipe that transfers the cooling medium to the wafer cooling channel 31.

例如，如第4（a）圖和第4（b）圖以及第5（a）圖和第5（b）圖所示，第二連接件62是空心的，與晶圓冷卻通道件31連接的線路32穿過第二連接件62而被引導到去氣腔室10之外。在此情形下，第二連接件62兼具固定冷卻盤30’和引導線路32的作用，可以簡化去氣腔室10的結構。另外，第二連接件62可以將去氣腔室10的內部環境與外部的大氣環境隔離開。For example, as shown in FIGS. 4(a) and 4(b) and FIGS. 5(a) and 5(b), the second connector 62 is hollow and connected to the wafer cooling channel member 31 The line 32 is led out of the degassing chamber 10 through the second connector 62. In this case, the second connector 62 has the function of fixing the cooling plate 30' and the guide line 32, which can simplify the structure of the degassing chamber 10. In addition, the second connector 62 may isolate the internal environment of the degassing chamber 10 from the external atmospheric environment.

為了方便去氣腔室10的加工，通常需要將去氣腔室10的腔室壁分成多個部分，該多個部分被分開製造，然而再通過連接件連接在一起。第6圖示出了根據本揭露實施例的去氣腔室10的腔室壁，其中在第6圖中為了方便省略了腔室的內部結構。例如，如第6圖所示，去氣腔室10被分隔成上下兩個部分12和13，與該兩個部分12和13對應的腔室壁被分開製造，然後再通過諸如螺絲等的連接件連接在一起。In order to facilitate the processing of the degassing chamber 10, it is generally necessary to divide the chamber wall of the degassing chamber 10 into a plurality of parts, which are manufactured separately, and then connected together by connecting pieces. FIG. 6 shows the chamber wall of the degassing chamber 10 according to the embodiment of the present disclosure, wherein the internal structure of the chamber is omitted in FIG. 6 for convenience. For example, as shown in FIG. 6, the degassing chamber 10 is divided into upper and lower parts 12 and 13, and the chamber walls corresponding to the two parts 12 and 13 are manufactured separately, and then connected by means such as screws Pieces connected together.

例如，在將去氣腔室10的多個部分通過連接件連接在一起的過程中，需要配合連接件使用大量的密封膠圈，以使去氣腔室10成為氣密腔室。另外，在將去氣腔室10與其他部件（例如，如上該的保護罩10以及如下該的真空系統90、真空測量儀91、進氣系統92等）進行連接時也需要配合連接件使用大量的密封膠圈。然而，密封膠圈在受熱的情形下容易變形，影響密封效果。因此，在根據本揭露的實施例中，例如，如第4（a）圖和第4（b）圖以及第5（a）圖和第5（b）圖所示，至少在去氣腔室10的靠近加熱裝置20的腔室壁中設置有用於輸送冷卻介質的腔室冷卻通道70，以避免腔室壁由於加熱裝置20的熱輻射而溫度升高，從而避免密封膠圈受熱變形。例如，該腔室冷卻通道70不同於且獨立於冷卻裝置30。例如，如第4（a）圖和第4（b）圖以及第5（a）圖和第5（b）圖所示，在去氣腔室10的頂壁處設置腔室冷卻通道70。或者，可以在整個腔室壁中腔室冷卻通道70，以更好地避免腔室壁由於加熱裝置20的熱輻射而溫度升高。例如，如第6圖所示，在去氣腔室10的上壁、下壁和側壁中均設置了腔室冷卻通道70。例如，腔室冷卻通道70用於輸送包括冷卻水、冷卻液、液氮等的冷卻介質。For example, in the process of connecting a plurality of parts of the degassing chamber 10 through a connecting member, a large number of sealing rubber rings need to be used in conjunction with the connecting member, so that the degassing chamber 10 becomes an airtight chamber. In addition, when connecting the degassing chamber 10 with other components (for example, the protective cover 10 as described above and the vacuum system 90, the vacuum measuring instrument 91, the air intake system 92, etc. as described below), a large number of connectors are required to be used. Sealing aprons. However, the sealing rubber ring is easily deformed under heat, which affects the sealing effect. Therefore, in the embodiment according to the present disclosure, for example, as shown in FIGS. 4(a) and 4(b) and FIGS. 5(a) and 5(b), at least in the degassing chamber In the chamber wall of 10 near the heating device 20, a chamber cooling channel 70 for conveying a cooling medium is provided to avoid the temperature rise of the chamber wall due to the heat radiation of the heating device 20, thereby avoiding heat deformation of the sealing rubber ring. For example, the chamber cooling channel 70 is different from and independent of the cooling device 30. For example, as shown in FIGS. 4(a) and 4(b) and FIGS. 5(a) and 5(b), a chamber cooling channel 70 is provided at the top wall of the degassing chamber 10. Alternatively, the chamber cooling channel 70 may be in the entire chamber wall to better avoid the temperature rise of the chamber wall due to the heat radiation of the heating device 20. For example, as shown in FIG. 6, chamber cooling channels 70 are provided in the upper wall, lower wall, and side walls of the degassing chamber 10. For example, the chamber cooling channel 70 is used to convey a cooling medium including cooling water, cooling liquid, liquid nitrogen, and the like.

例如，如第4（a）圖和第4（b）圖以及第5（a）圖和第5（b）圖所示，移動支撐裝置80包括至少三個支撐針81和升降驅動機構，其中，至少三個支撐針81均垂直穿設於冷卻盤30’，用於共同將撐晶圓50支撐在加熱盤20’與冷卻盤30’之間。例如，在加熱狀態下，支撐針81穿過冷卻盤30’並上升，以將晶圓50運送到上述加熱位置，例如靠近加熱盤20’的位置或者與加熱盤20’接觸的位置。例如，在冷卻狀態下，支撐針81下降，以將晶圓50運送到上述冷卻位置，例如靠近冷卻盤30’的位置或者將晶圓50放置到冷卻盤30’上。For example, as shown in FIGS. 4(a) and 4(b) and FIGS. 5(a) and 5(b), the mobile support device 80 includes at least three support needles 81 and an elevating drive mechanism, in which At least three support pins 81 are vertically provided on the cooling plate 30', and are used to jointly support the support wafer 50 between the heating plate 20' and the cooling plate 30'. For example, in the heated state, the support pin 81 passes through the cooling tray 30' and rises to transport the wafer 50 to the above-mentioned heating position, for example, a position close to or in contact with the heating tray 20'. For example, in the cooled state, the support pin 81 is lowered to transport the wafer 50 to the above-mentioned cooling position, for example, close to the cooling tray 30' or the wafer 50 is placed on the cooling tray 30'.

例如，如第4（a）圖和第4（b）圖以及第5（a）圖和第5（b）圖所示，移動支撐裝置80還包括：升降連桿83，與支撐針81固定連接；以及升降電機84，驅動升降連桿83升高或下降。升降電機84驅動升降連桿83上升或下降，升降連桿83同步帶動至少三個支撐針81上升或下降，從而支撐針81可以將晶圓50運送到所需的製程位置。例如，支撐裝置還包括板狀的支撐針托盤82，支撐針81固定在支撐針托盤82的上表面，升降連桿83連接到支撐針托盤82的下表面。通過採用板狀的支撐針托盤82，可以使支撐針81的運動更穩定並且可以方便地設置多個支撐針81。For example, as shown in FIGS. 4(a) and 4(b) and FIGS. 5(a) and 5(b), the mobile support device 80 further includes: a lifting link 83, which is fixed to the support pin 81 Connection; and the lifting motor 84, driving the lifting link 83 to raise or lower. The lift motor 84 drives the lift link 83 to rise or fall, and the lift link 83 simultaneously drives at least three support pins 81 to rise or fall, so that the support pins 81 can transport the wafer 50 to a desired process position. For example, the support device further includes a plate-shaped support needle tray 82, the support needle 81 is fixed to the upper surface of the support needle tray 82, and the lifting link 83 is connected to the lower surface of the support needle tray 82. By using the plate-shaped support needle tray 82, the movement of the support needle 81 can be stabilized and a plurality of support needles 81 can be conveniently provided.

例如，如第4（a）圖和第4（b）圖以及第5（a）圖和第5（b）圖所示，去氣腔室10具有閥門11，在閥門11關閉之後去氣腔室10為氣密腔室。打開閥門11，晶圓50移入去氣腔室10或從去氣腔室10移出晶圓50。關閉閥門11，對晶圓50進行加熱和冷卻。For example, as shown in FIGS. 4(a) and 4(b) and FIGS. 5(a) and 5(b), the degassing chamber 10 has a valve 11, and after the valve 11 is closed, the degassing chamber The chamber 10 is an airtight chamber. The valve 11 is opened, and the wafer 50 is moved into or out of the degassing chamber 10. The valve 11 is closed, and the wafer 50 is heated and cooled.

例如，根據需要，根據本揭露實施例的去氣腔室還可以包括與去氣腔室10連接的真空系統90、真空測量儀91、進氣系統92等，在此不再贅述。For example, according to needs, the degassing chamber according to the embodiment of the present disclosure may further include a vacuum system 90, a vacuum measuring instrument 91, an air intake system 92, etc. connected to the degassing chamber 10, which will not be repeated here.

根據本揭露的實施例，還提供一種去氣方法，該方法在如上所述的根據本揭露實施例的去氣腔室10內進行。例如，根據本揭露實施例的去氣方法包括： 採用移動支撐裝置80承載晶圓50，且將晶圓50移動至能夠被加熱裝置20加熱的加熱位置，以對晶圓50進行加熱； 採用移動支撐裝置80將晶圓50移動至能夠被冷卻裝置30冷卻的冷卻位置，以對晶圓50進行冷卻。According to the embodiment of the present disclosure, there is also provided a degassing method, which is performed in the degassing chamber 10 according to the embodiment of the present disclosure as described above. For example, the degassing method according to an embodiment of the present disclosure includes: using a moving support device 80 to carry the wafer 50, and moving the wafer 50 to a heating position that can be heated by the heating device 20 to heat the wafer 50; using movement The supporting device 80 moves the wafer 50 to a cooling position that can be cooled by the cooling device 30 to cool the wafer 50.

在根據本揭露實施例的去氣方法中，採用移動支撐裝置80帶動晶圓50在去氣腔室10內的冷卻裝置30和加熱裝置20之間移動，從而可以在同一去氣腔室10內完成加熱製程和冷卻製程，提高了生產效率。另外，加熱裝置20可以直接，且近距離向晶圓50輻射熱量，而無需透過設置在加熱裝置20和晶圓50之間的用於隔離真空環境與大氣環境的部件（例如，第1圖所示的介質窗103），從而可以避免第1圖所示的去氣腔室中由於介質窗103的存在而帶來的晶圓溫度精度較差、加熱效率低、冷卻效率低等的問題。In the degassing method according to the embodiment of the present disclosure, the mobile support device 80 is used to drive the wafer 50 to move between the cooling device 30 and the heating device 20 in the degassing chamber 10 so that it can be in the same degassing chamber 10 Complete the heating process and cooling process to improve production efficiency. In addition, the heating device 20 can directly and radiate heat to the wafer 50 at a short distance, without passing through the components provided between the heating device 20 and the wafer 50 to isolate the vacuum environment and the atmospheric environment (for example, as shown in FIG. 1 The dielectric window 103 shown) can avoid problems such as poor wafer temperature accuracy, low heating efficiency, and low cooling efficiency due to the presence of the dielectric window 103 in the degassing chamber shown in FIG. 1.

例如，去氣腔室包括遮蔽件40，該遮蔽件40是可移動的；並且，該去氣方法進一步包括： 在移動支撐裝置80帶動晶圓50移動至加熱位置時，將遮蔽件40移動至使晶圓50暴露於加熱裝置20的第一位置； 在移動支撐裝置80帶動晶圓50移動至冷卻位置時，將遮蔽件40移動至加熱裝置20與晶圓50之間，以遮擋晶圓50的第二位置。For example, the degassing chamber includes a shielding member 40 that is movable; and, the degassing method further includes: when the mobile support device 80 drives the wafer 50 to the heating position, the shielding member 40 is moved to Expose the wafer 50 to the first position of the heating device 20; when the mobile support device 80 drives the wafer 50 to the cooling position, move the shield 40 between the heating device 20 and the wafer 50 to shield the wafer 50 Second position.

這樣一來，可以保證加熱效率和冷卻效率。In this way, heating efficiency and cooling efficiency can be guaranteed.

例如，根據本揭露實施例的去氣方法的一個示例如下。打開閥門11，晶圓50移入去氣腔室10並放置在支撐針81上，遮蔽件40移入保護罩41內或者被折疊；關閉閥門11，採用真空系統90將去氣腔室10抽到真空狀態；進氣系統92向去氣腔室10通入惰性氣體（例如，N2、Ar等），支撐針81將晶圓50運送到靠近加熱盤20’的位置，開啟加熱裝置20並對晶圓50進行加熱，在加熱的過程中可以通過測溫元件23監測加熱盤20’的溫度並根據監測結果即時調整加熱盤20’的溫度；加熱完畢之後，真空系統90將去氣腔室10內的惰性氣體排出，進氣系統92向去氣腔室10重新通入惰性氣體（例如，N2、Ar等），支撐針81下降以將晶圓50放置到冷卻盤30’上，遮蔽件40被移動到加熱盤20’和晶圓50之間，開啟冷卻裝置30並對晶圓50進行冷卻；在冷卻完畢之後，將晶圓50移出腔室。需要說明的是，根據本揭露實施例的去氣方法不侷限於上述示例。For example, an example of a degassing method according to an embodiment of the present disclosure is as follows. The valve 11 is opened, the wafer 50 is moved into the degassing chamber 10 and placed on the support pin 81, the shielding member 40 is moved into the protective cover 41 or is folded; the valve 11 is closed, and the degassing chamber 10 is evacuated to a vacuum using a vacuum system 90 Status; the intake system 92 passes inert gas (for example, N2, Ar, etc.) to the degassing chamber 10, the support pin 81 transports the wafer 50 to a position close to the heating plate 20', and the heating device 20 is turned on and the wafer 50 is heated, during the heating process, the temperature of the heating plate 20' can be monitored by the temperature measuring element 23 and the temperature of the heating plate 20' can be adjusted in real time according to the monitoring result; after the heating is completed, the vacuum system 90 will remove the temperature in the air chamber 10 The inert gas is discharged, the air inlet system 92 re-injects the inert gas (for example, N2, Ar, etc.) into the degassing chamber 10, the support pin 81 is lowered to place the wafer 50 on the cooling plate 30', and the shield 40 is moved Between the heating plate 20' and the wafer 50, the cooling device 30 is turned on and the wafer 50 is cooled; after the cooling is completed, the wafer 50 is moved out of the chamber. It should be noted that the degassing method according to the disclosed embodiment is not limited to the above example.

有以下幾點需要說明：（1）在本揭露實施例的附圖中，只涉及到與本揭露實施例相關的結構，其他結構可參考通常設計；（2）為了清晰起見，在用於描述本揭露實施例的附圖中，各部件並非按照實際比例繪製；（3）在不衝突的情況下，本揭露實施例中的特徵可以相互組合。The following points need to be explained: (1) In the drawings of the disclosed embodiment, only the structures related to the disclosed embodiment are involved, other structures can refer to the general design; (2) For clarity, the In the drawings describing the embodiments of the present disclosure, each component is not drawn according to actual scale; (3) The features in the embodiments of the present disclosure may be combined with each other without conflict.

以上所述僅是本揭露的示範性實施方式，而非用於限制本揭露的保護範圍，本揭露的保護範圍由所附的申請專利範圍確定。The above is only an exemplary embodiment of the present disclosure, and is not intended to limit the scope of protection of the present disclosure. The scope of protection of the present disclosure is determined by the scope of the attached patent application.

10‧‧‧去氣腔室11‧‧‧閥門12和13‧‧‧去氣腔室上下兩個部分20‧‧‧加熱裝置20’‧‧‧加熱盤21‧‧‧加熱元件22‧‧‧線路23‧‧‧測溫元件24‧‧‧引線30‧‧‧冷卻裝置30’‧‧‧冷卻盤31‧‧‧晶圓冷卻通道32‧‧‧線路40‧‧‧遮蔽件41‧‧‧保護罩42‧‧‧旋轉連桿43‧‧‧旋轉電機50‧‧‧晶圓61‧‧‧第一連接件62‧‧‧第二連接件70‧‧‧腔室冷卻通道80‧‧‧移動支撐裝置81‧‧‧支撐針82‧‧‧支撐針托盤83‧‧‧升降連桿84‧‧‧升降電機90‧‧‧真空系統91‧‧‧真空測量儀92‧‧‧進氣系統101‧‧‧去氣腔室102‧‧‧加熱光源103‧‧‧透明介質窗104‧‧‧冷卻裝置105‧‧‧晶圓201‧‧‧腔室202‧‧‧加熱裝置203‧‧‧晶圓10‧‧‧Degassing chamber 11‧‧‧ Valves 12 and 13‧‧‧Degassing chamber upper and lower two parts 20‧‧‧Heating device 20′‧‧‧Heating plate 21‧‧‧Heating element 22‧‧‧‧ Line 23‧‧‧Temperature measuring element 24‧‧‧Lead 30‧‧‧Cooling device 30′‧‧‧Cooling plate 31‧‧‧ Wafer cooling channel 32‧‧‧ Line 40‧‧‧Shield 41‧‧‧Protection Cover 42‧‧‧Rotating connecting rod 43‧‧‧Rotating motor 50‧‧‧ Wafer 61‧‧‧First connector 62‧‧‧Second connector 70‧‧‧Chamber cooling channel 80‧‧‧Mobile support Device 81‧‧‧Support needle 82‧‧‧Support needle tray 83‧‧‧Elevating connecting rod 84‧‧‧Elevating motor 90‧‧‧Vacuum system 91‧‧‧Vacuum measuring instrument 92‧‧‧Intake system 101‧‧ ‧Degassing chamber 102‧‧‧Heating light source 103‧‧‧Transparent dielectric window 104‧‧‧cooling device 105‧‧‧wafer 201‧‧‧chamber 202‧‧‧heating device 203‧‧‧wafer

為了更清楚地說明本揭露實施例的技術方案，下麵將對實施例的附圖作簡單地介紹，顯而易見地，下麵描述中的附圖僅僅涉及本揭露的一些實施例，而非對本揭露的限制。 第1圖示出了根據一種技術的去氣腔室； 第2圖示出了根據一種技術的加熱腔室; 第3（a）圖示出了根據本揭露實施例的去氣腔室； 第3（b）圖示出了設置在根據本揭露實施例的去氣腔室中的加熱裝置的加熱盤的截面示意圖； 第4（a）圖和第4（b圖）分別示出了根據本揭露實施例的去氣腔室，其中第4（a）圖為加熱狀態下的示意圖，第4（b）圖為冷卻狀態下的示意圖； 第5（a）圖和第5（b）圖分別示出了根據本揭露實施例的去氣腔室，其中第5（a）圖為加熱狀態下的示意圖，第5（b）圖為冷卻狀態下的示意圖；以及 第6圖示出了根據本揭露實施例的去氣腔室的腔室壁。In order to more clearly explain the technical solutions of the disclosed embodiments, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the disclosure, rather than limit the disclosure . Figure 1 shows a degassing chamber according to one technique; Figure 2 shows a heating chamber according to one technique; Figure 3(a) shows a degassing chamber according to an embodiment of the present disclosure; 3(b) shows a schematic cross-sectional view of a heating plate of a heating device provided in a degassing chamber according to an embodiment of the present disclosure; FIGS. 4(a) and 4(b) show The degassing chamber of the embodiment is disclosed, wherein Figure 4(a) is a schematic diagram in a heated state, and Figure 4(b) is a schematic diagram in a cooled state; Figures 5(a) and 5(b) are respectively A degassing chamber according to an embodiment of the present disclosure is shown, where FIG. 5(a) is a schematic diagram in a heated state, and FIG. 5(b) is a schematic diagram in a cooled state; and FIG. 6 shows a schematic diagram according to the present invention. The chamber wall of the degassing chamber of the embodiment is disclosed.

10‧‧‧去氣腔室 10‧‧‧ Go to the air chamber

20‧‧‧加熱裝置 20‧‧‧Heating device

20’‧‧‧加熱盤 20’‧‧‧Heating plate

21‧‧‧加熱元件 21‧‧‧Heating element

30‧‧‧冷卻裝置 30‧‧‧cooling device

30’‧‧‧冷卻盤 30’‧‧‧cooling plate

50‧‧‧晶圓 50‧‧‧ Wafer

61‧‧‧第一連接件 61‧‧‧First connector

62‧‧‧第二連接件 62‧‧‧Second connector

80‧‧‧移動支撐裝置 80‧‧‧Mobile support device

Claims (16)

一種去氣腔室，其特徵在於，該去氣腔室的內部設有一加熱裝置、一冷卻裝置和一移動支撐裝置；其中， 該冷卻裝置與該加熱裝置間隔，且相對設置； 該移動支撐裝置用於承載一晶圓，且能夠帶動該晶圓在該加熱裝置和該冷卻裝置之間移動，以分別對該晶圓進行加熱和冷卻。A degassing chamber, characterized in that the degassing chamber is provided with a heating device, a cooling device, and a mobile support device; wherein, the cooling device is spaced from the heating device and is relatively arranged; the mobile support device It is used to carry a wafer, and can drive the wafer to move between the heating device and the cooling device to respectively heat and cool the wafer. 如申請專利範圍第1項所述的去氣腔室，還包括一遮蔽件，該遮蔽件是可移動的，且在該移動支撐裝置帶動該晶圓移動至能夠被該加熱裝置加熱的加熱位置時，該遮蔽件能夠移動至使該晶圓暴露於該加熱裝置的第一位置；在該移動支撐裝置帶動該晶圓移動至能夠被該冷卻裝置冷卻的冷卻位置時，該遮蔽件能夠移動至該加熱裝置與該晶圓之間，以遮擋該晶圓的第二位置。The degassing chamber as described in item 1 of the scope of the patent application further includes a shielding member, the shielding member is movable, and the mobile support device drives the wafer to a heating position that can be heated by the heating device The shield can move to the first position that exposes the wafer to the heating device; when the mobile support device drives the wafer to a cooling position that can be cooled by the cooling device, the shield can move to Between the heating device and the wafer, to shield the second position of the wafer. 如申請專利範圍第2項所述的去氣腔室，還包括與該去氣腔室的內部連通的一保護罩，該遮蔽件在位於該第一位置時，置於該保護罩中。The degassing chamber as described in item 2 of the patent application scope further includes a protective cover communicating with the inside of the degassing chamber, and the shielding member is placed in the protective cover when it is in the first position. 如申請專利範圍第2項或第3項所述的去氣腔室，還包括一旋轉驅動機構，用於驅動該遮蔽件在該第一位置與該第二位置之間轉動。The degassing chamber according to item 2 or item 3 of the patent application scope further includes a rotation driving mechanism for driving the shielding member to rotate between the first position and the second position. 如申請專利範圍第4項所述的去氣腔室，其中，該旋轉驅動機構包括一旋轉連桿和一旋轉電機，其中， 該旋轉連桿垂直設置在該遮蔽件的靠近該保護罩的一側，且分別與該遮蔽件和該旋轉電機連接； 該旋轉電機用於驅動該旋轉連桿圍繞該旋轉連桿的軸線轉動。The degassing chamber as described in item 4 of the patent application scope, wherein the rotation driving mechanism includes a rotation link and a rotation motor, wherein the rotation link is vertically disposed on a side of the shielding member near the protective cover Side, and are respectively connected to the shielding member and the rotating electrical machine; the rotating electrical machine is used to drive the rotating link to rotate around the axis of the rotating link. 如申請專利範圍第2項或第3項所述的去氣腔室，其中，該遮蔽件是可折疊或伸展的，且在該移動支撐裝置帶動該晶圓移動至該加熱位置時，該遮蔽件能夠折疊移動至該第一位置；在該移動支撐裝置帶動該晶圓移動至該冷卻位置時，該遮蔽件能夠伸展移動至該第二位置。The degassing chamber according to item 2 or item 3 of the patent application scope, wherein the shielding member is foldable or stretchable, and when the mobile support device drives the wafer to the heating position, the shielding The piece can be folded and moved to the first position; when the mobile support device drives the wafer to move to the cooling position, the shield can be extended to move to the second position. 如申請專利範圍第1項所述的去氣腔室，其中，該加熱裝置包括一加熱盤，且在該加熱盤中設置有加熱元件；並且，沿從該加熱盤的中心到該加熱盤的邊緣的方向，該加熱元件的排布密度逐漸增加。The degassing chamber according to item 1 of the scope of the patent application, wherein the heating device includes a heating plate, and a heating element is provided in the heating plate; and, from the center of the heating plate to the heating plate In the direction of the edge, the arrangement density of the heating element gradually increases. 如申請專利範圍第7項所述的去氣腔室，其中，該加熱元件包括一加熱絲，該加熱絲圍繞該加熱盤的軸線纏繞成平面螺旋結構，且沿從該加熱盤的中心到該加熱盤的邊緣的方向，相鄰的兩匝加熱絲之間的間距逐漸減小。The degassing chamber according to item 7 of the patent application scope, wherein the heating element comprises a heating wire wound around the axis of the heating plate into a planar spiral structure, and extending from the center of the heating plate to the In the direction of the edge of the heating plate, the distance between two adjacent turns of heating wire gradually decreases. 如申請專利範圍第7項所述的去氣腔室，其中，在該晶圓位於該加熱位置時，該晶圓與該加熱盤相對的兩個表面之間具有預設間距。The degassing chamber according to item 7 of the scope of the patent application, wherein when the wafer is in the heating position, there is a predetermined distance between the two surfaces of the wafer and the heating plate opposite to each other. 如申請專利範圍第9項所述的去氣腔室，其中，該預設間距的取值範圍在0.05mm-0.15mm。The degassing chamber as described in item 9 of the patent application scope, wherein the value range of the preset interval is 0.05mm-0.15mm. 如申請專利範圍第1項所述的去氣腔室，其中，該冷卻裝置包括一冷卻盤，且在該冷卻盤中設置有用於輸送冷卻介質的晶圓冷卻通道。The degassing chamber according to item 1 of the patent application scope, wherein the cooling device includes a cooling tray, and a wafer cooling channel for transporting a cooling medium is provided in the cooling tray. 如申請專利範圍第1項所述的去氣腔室，其中，該加熱裝置和該冷卻裝置沿垂直方向設置，且該加熱裝置位於該冷卻裝置的上方。The degassing chamber according to item 1 of the patent application scope, wherein the heating device and the cooling device are arranged in a vertical direction, and the heating device is located above the cooling device. 如申請專利範圍第12項所述的去氣腔室，其中，該移動支撐裝置包括至少三個支撐針和一升降驅動機構，其中， 該至少三個支撐柱均垂直穿設於該冷卻裝置，用於共同將該晶圓支撐在該加熱裝置與該冷卻裝置之間； 該升降驅動機構用於驅動該至少三個支撐柱上升或下降。The degassing chamber according to item 12 of the patent application scope, wherein the mobile support device includes at least three support pins and a lifting drive mechanism, wherein the at least three support columns are all vertically penetrated by the cooling device, It is used to jointly support the wafer between the heating device and the cooling device; the lifting driving mechanism is used to drive the at least three support columns to rise or fall. 如申請專利範圍1項該的去氣腔室，其中， 至少在該去氣腔室的靠近該加熱裝置的腔室壁中設置有用於輸送冷卻介質的腔室冷卻通道。The degassing chamber of claim 1, wherein at least a chamber cooling channel for conveying a cooling medium is provided in the wall of the degassing chamber close to the heating device. 一種去氣方法，其特徵在於，在申請專利範圍第1項至第14項任意一項所述的去氣腔室內進行，該方法包括： 採用該移動支撐裝置承載晶圓，且將該晶圓移動至能夠被該加熱裝置加熱的加熱位置，以對該晶圓進行加熱； 採用該移動支撐裝置將該晶圓移動至能夠被該冷卻裝置冷卻的冷卻位置，以對該晶圓進行冷卻。A degassing method, characterized in that it is carried out in a degassing chamber as described in any one of the patent application items 1 to 14, the method comprising: using the mobile support device to carry a wafer, and the wafer Move to a heating position that can be heated by the heating device to heat the wafer; use the moving support device to move the wafer to a cooling position that can be cooled by the cooling device to cool the wafer. 如申請專利範圍第15項所述的去氣方法，其中， 該去氣腔室包括一遮蔽件，該遮蔽件是可移動的；並且 該方法進一步包括： 在該移動支撐裝置帶動該晶圓移動至該加熱位置時，將該遮蔽件移動至使該晶圓暴露於該加熱裝置的第一位置； 在該移動支撐裝置帶動該晶圓移動至該冷卻位置時，將該遮蔽件移動至該加熱裝置與該晶圓之間，以遮擋該晶圓的第二位置。The degassing method as described in item 15 of the patent application range, wherein the degassing chamber includes a shielding member, the shielding member is movable; and the method further includes: driving the wafer to move on the moving support device When reaching the heating position, move the shield to the first position that exposes the wafer to the heating device; when the moving support device drives the wafer to the cooling position, move the shield to the heating Between the device and the wafer to cover the second position of the wafer.
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CN108711556B (en) 2020-06-19
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KR20200140376A (en) 2020-12-15
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