TW202002322A - Light-emitting element and manufacturing method thereof wherein the light-emitting element is manufactured by bonding a dielectric film with a window layer and removing a starting substrate, so as to increase the light extraction efficiency - Google Patents

Light-emitting element and manufacturing method thereof wherein the light-emitting element is manufactured by bonding a dielectric film with a window layer and removing a starting substrate, so as to increase the light extraction efficiency Download PDF

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TW202002322A
TW202002322A TW108117956A TW108117956A TW202002322A TW 202002322 A TW202002322 A TW 202002322A TW 108117956 A TW108117956 A TW 108117956A TW 108117956 A TW108117956 A TW 108117956A TW 202002322 A TW202002322 A TW 202002322A
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dielectric film
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TWI804627B (en
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石崎順也
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日商信越半導體股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

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Abstract

An object of the present invention is to provide a light-emitting element manufactured by bonding a dielectric film such as silicon dioxide with a window layer serving as a supporting substrate and removing a starting substrate, so as to increase the light extraction efficiency. The light-emitting element of the present invention includes a window layer serving as a supporting substrate and a light-emitting portion. The light-emitting portion sequentially includes a second semiconductor layer of a second conductivity type on the window layer serving as a supporting substrate, an active layer, and a first semiconductor layer of a first conductivity type. The light-emitting element includes a removing portion that removes at least the first semiconductor layer and the active layer; a non-removing portion other than the removing portion; a first ohmic electrode provided on the non-removing portion; and a second ohmic electrode provided on the removing portion. The window layer serving as a supporting substrate and the light-emitting portion are bonded through the dielectric film. An anti-reflection layer is provided between the light-emitting portion and the dielectric film.

Description

發光元件以及發光元件的製造方法Light emitting element and method of manufacturing light emitting element

本發明係關於一種發光元件及發光元件的製造方法。The invention relates to a light-emitting element and a method of manufacturing the light-emitting element.

板上晶片（COB）等的產品，由於來自LED元件的散熱性係為佳，因此為在照明等的用途中而被採用為LED晶片安裝方法。將LED安裝在COB等的場合，則必須為將晶片直接對基板接合的覆晶安裝。為了實現覆晶安裝，必須製作發光元件的一側的表面上設有極性相異的通電用銲墊的覆晶。此外，設置有通電用銲墊的表面的相反側的表面則必須以具有光取出功能的材料來構成。Products such as chip on board (COB) have better heat dissipation from LED elements, so they are used as LED chip mounting methods for lighting and other applications. When the LED is mounted on a COB or the like, it must be mounted on a flip chip that directly bonds the wafer to the substrate. In order to realize flip chip mounting, it is necessary to produce a flip chip on which the pads for current conduction with different polarities are provided on one surface of the light emitting element. In addition, the surface on the opposite side of the surface on which the pad for electrical conduction is provided must be made of a material having a light extraction function.

以黃色~紅色LED製作覆晶的場合，發光層係使用AlGaInP系的材料。由於AlGaInP系材料不存在塊狀結晶，且LED部係以磊晶法形成，故起始基板會選擇與AlGaInP不同的材料。起始基板大多選擇GaAs或Ge，而這些基板具有對可見光的光吸收的特性，故製作覆晶的場合，會除去起始基板。然而，形成發光層的磊晶層為極薄膜，故起始基板除去後便無法自立。因此必須以具有對發光層的發光波長呈現略透明而作為窗層的功能，以及厚度足以使其自立而作為支承基板的功能的材料及構成，與起始基板置換。When flip-chips are fabricated with yellow to red LEDs, AlGaInP-based materials are used for the light-emitting layer. Since there is no bulk crystal in the AlGaInP-based material, and the LED part is formed by the epitaxy method, the starting substrate will select a different material from AlGaInP. Most of the starting substrates are GaAs or Ge, and these substrates have the characteristic of absorbing visible light, so when the flip-chip is fabricated, the starting substrate is removed. However, the epitaxial layer forming the light-emitting layer is an extremely thin film, so it cannot stand on its own after the starting substrate is removed. Therefore, it is necessary to replace the starting substrate with a material and structure that has a function as a window layer that is slightly transparent to the emission wavelength of the light-emitting layer, and has a thickness sufficient to make it stand-alone.

作為具有窗層兼支承基板的功能的置換材料，選自GaP、GaAsP或藍寶石等。即使選擇前述任一種材料，由於是與AlGaInP系材料相異的材料，晶格常數、故熱膨脹係數及楊氏模數等的機械性特性也與AlGaInP系材料相異。The replacement material having the function of the window layer and supporting substrate is selected from GaP, GaAsP, sapphire, or the like. Even if any one of the aforementioned materials is selected, since it is a material different from the AlGaInP-based material, mechanical properties such as lattice constant, thermal expansion coefficient, and Young's modulus are also different from the AlGaInP-based material.

作為如此的技術，專利文獻1記載了藉由結晶成長及直接接合而形成作為窗層兼支承基板的GaP的方法。在此技術中，根據直接接合的Gap基板的大小而決定發光元件用晶圓的大小，而有難以使晶圓大口徑化的問題。因此，此技術即使有利於小的發光元件的製造，但是不利於大的發光元件的製造。再者，專利文獻2記載了結晶成長而形成作為窗層兼支承基板的GaP的方法。根據此技術，由於沒有接合GaP基板，故不受接合基板的大小的制約。但是，GaP與AlGaInP發光層部存在大的晶格不匹配，會發生翹曲。由於若將晶圓大口徑化，翹曲會變大，而會有若使用大的晶圓則裝置處理會變得困難的問題。因此，此技術即使有利於小的發光元件的製造，但是不利於大的發光元件的製造。再者，專利文獻3記載了將由藍寶石等所成的作為窗層兼支承基板的透明基板透過SiO2 層而接合的技術。若為此技術，即使為大口徑的晶圓也能夠降低翹曲及接合瑕疵。但是，此場合，在半導體部與SiO2 層之間會發生反射，而有朝向透明基板側的光提取效率降低的缺點。 ［先前技術文獻］ ［專利文獻］As such a technique, Patent Document 1 describes a method of forming GaP as a window layer and supporting substrate by crystal growth and direct bonding. In this technique, the size of the light-emitting element wafer is determined according to the size of the directly bonded Gap substrate, and it is difficult to increase the diameter of the wafer. Therefore, even though this technique is advantageous for the manufacture of small light-emitting elements, it is not conducive to the manufacture of large light-emitting elements. Furthermore, Patent Document 2 describes a method of crystal growth to form GaP as a window layer and supporting substrate. According to this technique, since the GaP substrate is not bonded, it is not restricted by the size of the bonded substrate. However, there is a large lattice mismatch between the GaP and AlGaInP light-emitting layers, and warpage may occur. If the diameter of the wafer is increased, the warpage will become larger, and if large wafers are used, device processing will become difficult. Therefore, even though this technique is advantageous for the manufacture of small light-emitting elements, it is not conducive to the manufacture of large light-emitting elements. In addition, Patent Document 3 describes a technique of bonding a transparent substrate made of sapphire or the like as a window layer and supporting substrate through an SiO 2 layer. With this technology, even large-diameter wafers can reduce warpage and bonding defects. However, in this case, reflection occurs between the semiconductor portion and the SiO 2 layer, and there is a disadvantage that the light extraction efficiency toward the transparent substrate side is reduced. [Prior Art Literature] [Patent Literature]

［專利文件1］日本特開2015-12028號公報 ［專利文件2］日本特開2015-5551號公報 ［專利文件3］日本特開2017-126720號公報[Patent Document 1] Japanese Patent Laid-Open No. 2015-12028 [Patent Document 2] Japanese Patent Laid-Open No. 2015-5551 [Patent Document 3] Japanese Patent Application Publication No. 2017-126720

［發明所欲解決之問題］ 鑒於上述課題，本發明的目的在於提供藉由透過SiO2 層等的介電質膜接合窗層兼支承基板，並除去起始基板而製造的類型，並使光提取效率提升的發光元件及其製造方法。 ［解決問題之技術手段］[Problems to be Solved by the Invention] In view of the above-mentioned problems, an object of the present invention is to provide a type manufactured by joining a window layer and a supporting substrate through a dielectric film such as an SiO 2 layer and removing the starting substrate, and allowing light Light-emitting element with improved extraction efficiency and manufacturing method thereof. [Technical means to solve problems]

為了達成上述課題，本發明提供一種發光元件，係包括一窗層兼支承基板及一發光部，該發光部依序包含設置於該窗層兼支承基板上的第二導電型的一第二半導體層、一活性層、及第一導電型的一第一半導體層，該發光元件包含：一除去部，係至少除去該第一半導體層及該活性層；一非除去部，係為該除去部以外；一第一歐姆電極，係設置於該非除去部；以及一第二歐姆電極，係設置於該除去部，其中該窗層兼支承基板與該發光部係透過一介電質膜而相接合，該發光部與該介電質膜之間具有一反射防止層。In order to achieve the above-mentioned problems, the present invention provides a light-emitting device including a window layer and supporting substrate and a light-emitting portion, the light-emitting portion sequentially including a second semiconductor of a second conductivity type disposed on the window layer and supporting substrate Layer, an active layer, and a first semiconductor layer of the first conductivity type, the light-emitting element includes: a removal portion to remove at least the first semiconductor layer and the active layer; a non-removal portion to be the removal portion In addition; a first ohmic electrode is provided in the non-removed portion; and a second ohmic electrode is provided in the removed portion, wherein the window layer and supporting substrate and the light-emitting portion are joined through a dielectric film There is an anti-reflection layer between the light-emitting part and the dielectric film.

若為如此的發光元件，能夠將發光部所發射的光在介電質膜反射的情況予以抑制，而能夠提升光提取效率。With such a light-emitting element, it is possible to suppress the light emitted by the light-emitting portion from being reflected by the dielectric film, and it is possible to improve the light extraction efficiency.

再者，此時以該介電質膜為SiO2 層，該反射防止層具有1.6以上2.9以下的折射率為佳。Furthermore, in this case, the dielectric film is used as the SiO 2 layer, and the antireflection layer preferably has a refractive index of 1.6 or more and 2.9 or less.

若為如此的介電質膜及反射防止層，能夠更確實地提升光提取效率。With such a dielectric film and anti-reflection layer, the light extraction efficiency can be more reliably improved.

再者，以該介電質膜係包括設置於該發光部之側的一第一介電質膜及設置於該窗層兼支承基板之側的一第二介電質膜，該第一介電質膜及該第二介電質膜係直接接合為佳。Furthermore, the dielectric film includes a first dielectric film disposed on the side of the light-emitting portion and a second dielectric film disposed on the side of the window layer and supporting substrate, the first dielectric It is preferable that the electrical film and the second dielectric film are directly bonded.

若為如此的介電質膜，能夠成為接合瑕疵所致的剝離為少之物。If it is such a dielectric film, it can become the thing with little peeling by a junction defect.

再者，以該介電質膜係包括設置於該發光部之側的一第一介電質膜及設置於該窗層兼支承基板之側的一第二介電質膜所成，該第一介電質膜及該第二介電質膜係透過黏接劑而接合為佳。Furthermore, the dielectric film is composed of a first dielectric film provided on the side of the light-emitting portion and a second dielectric film provided on the side of the window layer and supporting substrate. A dielectric film and the second dielectric film are preferably joined by an adhesive.

即使為如此的介電質膜，也能夠成為接合瑕疵所致的剝離為少之物。Even if it is such a dielectric film, it can become the thing with little peeling by junction defect.

再者，本發明提供一種發光元件的製造方法，係製造發光元件，該發光元件的製造方法包含下列步驟：準備起始基板；於該起始基板上，藉由磊晶成長，形成一積層構造而製作一發光元件用晶圓，該積層構造係包括一發光部，該發光部係依序積層有第一導電型的一第一半導體層、一活性層、及一第二導電型的一第二半導體層；於該發光元件用晶圓上，形成一第一介電質膜；準備一窗層兼支承基板；於該窗層兼支承基板上形成一第二介電質膜；使該發光元件用晶圓與該窗層兼支承基板透過該第一介電質膜及該第二介電質膜而相接合，而製作一接合基板；將該接合基板之中的該起始基板除去而使該第一半導體層露出；形成一除去部及該除去部以外的一非除去部，該除去部係將該接合基板的一部分的區域之中的至少該第一半導體層及該活性層予以除去；於該非除去部的表面形成一第一歐姆電極，於該除去部的表面形成一第二歐姆電極；使用藉由雷射光的刻劃及劈裂法而自該接合基板分離出晶粒狀的發光元件，其中於形成該第一介電質膜的步驟之前，於該發光元件用晶圓的該發光部之上形成一反射防止層。Furthermore, the present invention provides a method for manufacturing a light-emitting element, which is a method for manufacturing a light-emitting element. The method for manufacturing a light-emitting element includes the following steps: preparing a starting substrate; on the starting substrate, by epitaxial growth, forming a layered structure To fabricate a wafer for a light-emitting device, the layered structure includes a light-emitting portion, and the light-emitting portion is sequentially stacked with a first semiconductor layer of a first conductivity type, an active layer, and a first conductivity type Two semiconductor layers; forming a first dielectric film on the light-emitting element wafer; preparing a window layer and supporting substrate; forming a second dielectric film on the window layer and supporting substrate; making the light emitting The element wafer and the window layer and support substrate are bonded through the first dielectric film and the second dielectric film to produce a bonded substrate; the starting substrate among the bonded substrates is removed and Exposing the first semiconductor layer; forming a removed portion and a non-removed portion other than the removed portion, the removed portion removing at least the first semiconductor layer and the active layer in a region of a part of the bonded substrate Forming a first ohmic electrode on the surface of the non-removed portion and forming a second ohmic electrode on the surface of the removed portion; using a laser scribing and cleaving method to separate the grainy form from the bonding substrate In the light-emitting element, before the step of forming the first dielectric film, an anti-reflection layer is formed on the light-emitting portion of the light-emitting element wafer.

若為如此的發光元件的製造方法，由於能夠將發光部所發射的光在介電質膜反射的情況予以抑制，而能夠製造得以使光提取效率提升的發光元件。According to such a method of manufacturing a light-emitting element, it is possible to suppress the light emitted by the light-emitting portion from being reflected by the dielectric film, and it is possible to manufacture a light-emitting element capable of improving light extraction efficiency.

再者，此時以該第一介電質膜及該第二介電質膜為SiO2 層，該反射防止層具有1.6以上2.9以下的折射率為佳。Furthermore, in this case, it is preferable that the first dielectric film and the second dielectric film are SiO 2 layers, and the antireflection layer has a refractive index of 1.6 or more and 2.9 or less.

若為如此的第一介電質膜、第二介電質膜及反射防止層，能夠更確實地提升光提取效率。If it is such a first dielectric film, a second dielectric film, and an antireflection layer, the light extraction efficiency can be more surely improved.

再者，此時以在製作該接合基板的步驟之中，使該第一介電質膜及該第二介電質膜直接接合，而將該窗層兼支承基板與該發光元件用晶圓相接合為佳。Furthermore, at this time, in the step of manufacturing the bonding substrate, the first dielectric film and the second dielectric film are directly bonded, and the window layer and the supporting substrate and the light-emitting element wafer are bonded together. It is better to join.

若如此接合介電質膜，能夠使接合瑕疵所致的剝離降低。If the dielectric film is bonded in this way, peeling due to bonding defects can be reduced.

再者，此時以在製作該接合基板的步驟之中，藉由黏接劑使該第一介電質膜及該第二介電質膜接合，而將該窗層兼支承基板與該發光元件用晶圓相接合為佳。Furthermore, at this time, in the step of manufacturing the bonding substrate, the first dielectric film and the second dielectric film are bonded by an adhesive, and the window layer and the supporting substrate and the light emitting It is preferable that the device wafers are bonded.

即使如此接合介電質膜，也能夠使接合瑕疵所致的剝離降低。 ［對照先前技術之功效］Even if the dielectric film is bonded in this way, peeling due to bonding defects can be reduced. [Comparing the efficacy of the previous technology]

如同以上，若為本發明的發光元件，由於能夠將發光部所發射的光在介電質膜的反射予以抑制，而能夠提升光提取效率。As described above, according to the light-emitting element of the present invention, since the reflection of light emitted by the light-emitting portion in the dielectric film can be suppressed, the light extraction efficiency can be improved.

如同上述，在藉由透過SiO2 層等的介電質膜接合窗層兼支承基板並除去起始基板而製造的類型的發光元件之中，尋求使光提取效率提升的發光元件。As described above, among the types of light-emitting elements manufactured by joining a window layer and a supporting substrate through a dielectric film such as an SiO 2 layer and removing the starting substrate, a light-emitting element that improves light extraction efficiency is sought.

本發明人等，針對上述課題而反覆努力探討的結果，找出了在藉由透過SiO2 層等的介電質膜接合窗層兼支承基板並除去起始基板而製造的類型的發光元件之中，藉由於發光部與介電質膜之間設置反射防止層，能夠提升光提取效率，進而完成了本發明。The present inventors have repeatedly studied the above-mentioned problems and found a light-emitting element of the type manufactured by joining a window layer and a supporting substrate through a dielectric film such as an SiO 2 layer and removing the starting substrate In the present invention, by providing a reflection prevention layer between the light emitting portion and the dielectric film, the light extraction efficiency can be improved, and the present invention has been completed.

亦即，本發明係一種發光元件，係包括一窗層兼支承基板及一發光部，該發光部依序包含設置於該窗層兼支承基板上的第二導電型的一第二半導體層、一活性層、及第一導電型的一第一半導體層，該發光元件包含： 一除去部，係至少除去該第一半導體層及該活性層；一非除去部，係為該除去部以外；一第一歐姆電極，係設置於該非除去部；以及一第二歐姆電極，係設置於該除去部， 其中該窗層兼支承基板與該發光部係透過一介電質膜而相接合， 該發光部與該介電質膜之間具有一反射防止層。That is, the present invention is a light-emitting device including a window layer and supporting substrate and a light-emitting portion, the light-emitting portion sequentially includes a second semiconductor layer of a second conductivity type disposed on the window layer and supporting substrate, An active layer and a first semiconductor layer of the first conductivity type, the light emitting element includes: A removed portion removes at least the first semiconductor layer and the active layer; a non-removed portion is outside the removed portion; a first ohmic electrode is provided at the non-removed portion; and a second ohmic electrode is Installed in the removal section, Wherein the window layer and supporting substrate and the light emitting part are joined through a dielectric film, There is an anti-reflection layer between the light-emitting portion and the dielectric film.

以下針對本發明而詳細地說明，但是本發明不限定於此。The present invention will be described in detail below, but the present invention is not limited to this.

［第一實施樣貌的發光元件］ 首先說明本發明的第一實施樣貌的發光元件。[Light-emitting element of the first embodiment] First, the light-emitting element according to the first embodiment of the present invention will be described.

第10圖表示本發明的刻劃前的發光元件1000的示意圖。FIG. 10 shows a schematic view of the light-emitting element 1000 of the present invention before scoring.

如第10圖所示，本發明的第一實施樣貌的發光元件，對由GaP、GaAsP、藍寶石等所成的作為窗層兼支承基板120的透明基板，於透明基板(窗層兼支承基板120)的表面上形成有厚度0.05~1.0μm的第二介電質膜122及相同厚度0.05~1.0μm的第一介電質膜112。作為介電質膜，能夠採用SiO2 或SiNx 。As shown in FIG. 10, the light-emitting element of the first embodiment of the present invention has a transparent substrate (window layer and supporting substrate) made of GaP, GaAsP, sapphire, etc., as a transparent layer serving as a window layer and supporting substrate 120. 120) A second dielectric film 122 with a thickness of 0.05-1.0 μm and a first dielectric film 112 with the same thickness of 0.05-1.0 μm are formed on the surface. As the dielectric film, SiO 2 or SiN x can be used.

於第一介電質膜112之上，將具有光反射防止功能的反射防止層111(AR層)予以配置。On the first dielectric film 112, an anti-reflection layer 111 (AR layer) having an anti-reflection function is disposed.

於其之上形成有發光部108，發光部108依序包括由Alz Ga1-z As(0≦z≦1)或GaAsw P1-w (0≦w≦1)所成的厚度0.5~5.0μm的電流擴散層107、由InGaP或AlInP所成的厚度0.1~1.0μm的中間組成層106、由(Alx Ga1-x )y In1-y P(0≦x≦1、0≦y≦1)或Alz Ga1-z As(0≦z≦1)所成的厚度0.5~1.0μm的第二導電型的第二半導體層105、厚度0.1~1.0μm的活性層104及厚度0.5~1.0μm的第一導電型的第一半導體層103。A light-emitting portion 108 is formed thereon, and the light-emitting portion 108 sequentially includes a thickness of 0.5 made of Al z Ga 1-z As (0≦z≦1) or GaAs w P 1-w (0≦w≦1) ~5.0μm current diffusion layer 107, intermediate composition layer 106 made of InGaP or AlInP with a thickness of 0.1~1.0μm, consisting of (Al x Ga 1-x ) y In 1-y P (0≦x≦1, 0 ≦y≦1) or Al z Ga 1-z As (0≦z≦1), a second conductivity type second semiconductor layer 105 with a thickness of 0.5 to 1.0 μm, an active layer 104 with a thickness of 0.1 to 1.0 μm, and The first semiconductor layer 103 of the first conductivity type having a thickness of 0.5 to 1.0 μm.

活性層104係根據發光波長而以(Alx Ga1-x )y In1-y P(0≦x≦1、0.4≦y≦0.6)或Alz Ga1-z As(0≦z≦0.45)形成。應用於可見光照明的場合，選擇AlGaInP為佳，應用於紅外線照明的場合，選擇AlGaAs或InGaAs為佳。但是，關於活性層104的設計，由於藉由超晶格等的利用，能夠將提取波長調整為起因於材料組成的合適的波長以外，故不限於上述材料。The active layer 104 is (Al x Ga 1-x ) y In 1-y P (0≦x≦1, 0.4≦y≦0.6) or Al z Ga 1-z As(0≦z≦0.45) according to the emission wavelength )form. It is better to choose AlGaInP for the application of visible light illumination, and choose AlGaAs or InGaAs for the application of infrared illumination. However, regarding the design of the active layer 104, the use of a superlattice or the like makes it possible to adjust the extraction wavelength to a wavelength other than an appropriate wavelength due to the material composition, so it is not limited to the above materials.

第一半導體層103及第二半導體層105係選擇AlGaInP或AlGaAs，該選擇不一定要與活性層104為相同的材料系。For the first semiconductor layer 103 and the second semiconductor layer 105, AlGaInP or AlGaAs is selected, and this selection does not necessarily have to be the same material system as the active layer 104.

進一步，此發光元件具有活性層104及第一導電型的第一半導體層103被除去的除去部136，以及除去部136以外的非除去部135。此時，也能夠將第二導電型的第二半導體層105及中間組成層106也除去而成為除去部。然後，具有設置於非除去部135的第一半導體層103的表面上的第一歐姆電極185，以及設置於除去部136的表面上的第二歐姆電極186。Furthermore, the light-emitting element has a removal portion 136 from which the active layer 104 and the first semiconductor layer 103 of the first conductivity type are removed, and a non-removal portion 135 other than the removal portion 136. At this time, the second semiconductor layer 105 and the intermediate composition layer 106 of the second conductivity type can also be removed to become a removed portion. Then, there is a first ohmic electrode 185 provided on the surface of the first semiconductor layer 103 of the non-removed portion 135 and a second ohmic electrode 186 provided on the surface of the removed portion 136.

若為如此的發光元件，由於藉由反射防止層111的存在，能夠將發光部108所發射的光在介電質膜132的反射予以抑制，而能夠提升光提取效率。In the case of such a light-emitting element, due to the presence of the anti-reflection layer 111, the reflection of the light emitted by the light-emitting portion 108 on the dielectric film 132 can be suppressed, and the light extraction efficiency can be improved.

反射防止層111係選擇折射率低於GaP的折射率且高於介電質膜的折射率的1.6以上2.9以下程度的材料為佳。較佳為2~2.5的範圍。反射防止層111具體而言為AlN、GaN、Ta2 O3 、TiO2 、ZnS及ZnSe等。再者，反射防止層111以雙層以上構成也能得到同樣的效果。For the anti-reflection layer 111, it is preferable to select a material having a refractive index lower than that of GaP and higher than the refractive index of the dielectric film by about 1.6 or more and 2.9 or less. It is preferably in the range of 2 to 2.5. The anti-reflection layer 111 is specifically AlN, GaN, Ta 2 O 3 , TiO 2 , ZnS, ZnSe, and the like. In addition, the anti-reflection layer 111 may have the same effect even if it is composed of two or more layers.

第23圖係表示反射防止層的折射率與全反射角的關係的圖。例如，沒有反射防止層的場合，光從由GaP(折射率3)所成的電流擴散層107入射至由SiO2 (折射率1.5)所成的介電質膜132之際，根據sinθ = 1.5 / 3，全反射角θ為30°。因此，變得要以使從電流擴散層107朝向反射防止層111的光的入射及從反射防止層111朝向介電質膜132的光的入射的全反射角皆超過30°的方式選擇反射防止層111的折射率。根據第23圖，若為1.6以上2.9以下，由於從電流擴散層107朝向反射防止層111的光的入射及從反射防止層111朝向介電質膜132的光的入射的全反射角會超過30°，故將具備如此範圍的折射率的材料用於反射防止層111即可。Fig. 23 is a diagram showing the relationship between the refractive index of the anti-reflection layer and the total reflection angle. For example, when there is no anti-reflection layer, when light enters from the current diffusion layer 107 made of GaP (refractive index 3) to the dielectric film 132 made of SiO 2 (refractive index 1.5), according to sinθ = 1.5 / 3, the total reflection angle θ is 30°. Therefore, it becomes necessary to select antireflection in such a way that the total reflection angle of the light incident from the current diffusion layer 107 toward the antireflection layer 111 and the light incident from the antireflection layer 111 toward the dielectric film 132 exceeds 30°. The refractive index of layer 111. According to FIG. 23, if it is 1.6 or more and 2.9 or less, the total reflection angle of the light incident from the current diffusion layer 107 toward the anti-reflection layer 111 and the light incident from the anti-reflection layer 111 toward the dielectric film 132 will exceed 30 °, it is sufficient to use a material having a refractive index in such a range for the anti-reflection layer 111.

若為如此的介電質膜及反射防止層，能夠更確實地使光提取效率提升。With such a dielectric film and anti-reflection layer, the light extraction efficiency can be more reliably improved.

此發光元件的第一介電質膜112及第二介電質膜122，不透過黏接劑而直接接合，形成介電質膜132，而能夠實現接合瑕疵所致的剝離為少的接合。The first dielectric film 112 and the second dielectric film 122 of the light-emitting element are directly bonded without using an adhesive to form a dielectric film 132, and bonding with less peeling due to bonding defects can be achieved.

［第一實施樣貌的發光元件的製造方法］ 其次，使用第1圖至第10圖而說明第一實施樣貌的發光元件的製造方法。[Manufacturing method of the light-emitting element of the first embodiment] Next, the method of manufacturing the light-emitting element according to the first embodiment will be described using FIGS. 1 to 10.

最初，如第1圖所示，準備結晶軸自[001]方向朝[110]方向傾斜的起始基板100。作為起始基板100，能夠合適地使用GaAs或Ge。若起始基板100選自上述材料，由於能夠將該活性層104的材料以晶格匹配系進行磊晶成長，故易使活性層104的品質提升，能夠得到輝度上升及壽命特性的提升。Initially, as shown in FIG. 1, the starting substrate 100 in which the crystal axis is inclined from the [001] direction toward the [110] direction is prepared. As the starting substrate 100, GaAs or Ge can be suitably used. If the starting substrate 100 is selected from the above-mentioned materials, since the material of the active layer 104 can be epitaxially grown in a lattice matching system, the quality of the active layer 104 is easily improved, and brightness and life characteristics can be improved.

其次，於起始基板100上，藉由例如MOVPE法(有機金屬氣相沉積法)、MBE(分子束磊晶法)或CBE(化學束磊晶法)，以例如由(Alx Ga1-x )y In1-y P(0≦x≦1、0≦y≦1)或Alz Ga1-z As(0≦z≦1)所成的厚度0.5~1.0μm的第一導電型的第一半導體層103、厚度0.1~1.0μm的活性層104、以及厚度0.5~1.0μm的第二導電型的第二半導體層105的順序使之磊晶成長。於其之上，使厚度0.1~1.0μm的中間組成層106及厚度0.5~5.0μm的電流擴散層107磊晶成長，形成含有發光部108的積層構造，而製作發光元件用晶圓110。Secondly, on the starting substrate 100, for example by MOVPE method (organic metal vapor deposition method), MBE (molecular beam epitaxy method) or CBE (chemical beam epitaxy method), for example by (Al x Ga 1- x ) y In 1-y P (0≦x≦1, 0≦y≦1) or Al z Ga 1-z As (0≦z≦1) of the first conductivity type with a thickness of 0.5 to 1.0 μm The first semiconductor layer 103, the active layer 104 with a thickness of 0.1 to 1.0 μm, and the second semiconductor layer 105 of the second conductivity type with a thickness of 0.5 to 1.0 μm are sequentially epitaxially grown. On it, the intermediate composition layer 106 with a thickness of 0.1-1.0 μm and the current diffusion layer 107 with a thickness of 0.5-5.0 μm are epitaxially grown to form a layered structure including the light-emitting portion 108 to fabricate a wafer 110 for a light-emitting element.

再者，於起始基板100與第一半導體層103之間，***基板除去用的選擇蝕刻層102。Furthermore, between the starting substrate 100 and the first semiconductor layer 103, a selective etching layer 102 for substrate removal is inserted.

作為電流擴散層107，能夠合適地使用AlGaAs、GaAsP或GaP。以GaAsx P1-x (0≦x＜1)形成電流擴散層107的場合，中間組成層106以InGaP或AlInP形成為合適。由於當GaAsx P1-x (x≠1)及AlGaInP系材料或AlGaAs系材料之間存在晶格不匹配，故GaAsx P1-x (x≠1)會有高密度的應變及貫穿差排。貫穿差排密度能夠藉由組成x以調整。As the current diffusion layer 107, AlGaAs, GaAsP, or GaP can be suitably used. When the current diffusion layer 107 is formed of GaAs x P 1-x (0≦x<1), the intermediate composition layer 106 is preferably formed of InGaP or AlInP. Due to lattice mismatch between GaAs x P 1-x (x≠1) and AlGaInP-based materials or AlGaAs-based materials, GaAs x P 1-x (x≠1) will have high-density strain and penetration difference row. Through-row density can be adjusted by composition x.

其次，於電流擴散層107上配置具有光反射防止功能的反射防止層111。反射防止層111係選擇折射率低於GaP的折射率且高於介電質膜的折射率的1.6以上2.9以下程度的材料為佳。較佳為2~2.5的範圍。反射防止層111具體而言為AlN、GaN、Ta2 O3 、TiO2 、ZnS及ZnSe等。再者，反射防止層111以雙層以上構成也能得到同樣的效果。Next, an anti-reflection layer 111 having an anti-reflection function is arranged on the current diffusion layer 107. For the anti-reflection layer 111, it is preferable to select a material having a refractive index lower than that of GaP and higher than the refractive index of the dielectric film by about 1.6 or more and 2.9 or less. It is preferably in the range of 2 to 2.5. The anti-reflection layer 111 is specifically AlN, GaN, Ta 2 O 3 , TiO 2 , ZnS, ZnSe, and the like. In addition, the anti-reflection layer 111 may have the same effect even if it is composed of two or more layers.

若為如此的介電質膜及反射防止層，能夠更確實地使光提取效率提升。With such a dielectric film and anti-reflection layer, the light extraction efficiency can be more reliably improved.

其次，於反射防止層111上，將由SiO2 或SiNx 所成的第一介電質膜112以例如厚度0.4μm形成。Next, on the anti-reflection layer 111, a first dielectric film 112 made of SiO 2 or SiN x is formed with a thickness of 0.4 μm, for example.

其次，如第2圖所示，於GaP、藍寶石或石英等的窗層兼支承基板120上形成由SiO2 或SiNx 所成的介電質膜122。Next, as shown in FIG. 2, a dielectric film 122 made of SiO 2 or SiN x is formed on the window layer and support substrate 120 of GaP, sapphire, quartz, or the like.

其次，如第3圖所示，使第一介電質膜112與第二介電質膜122相對向，並且在真空或減壓氛圍下施加壓力及熱而將第一介電質膜112與第二介電質膜122直接接合，形成介電質膜132，而形成接合基板130。以壓力6N/cm2 以上，溫度150℃以上的條件進行壓接，而進行黏接。特別是，若以達到30N/cm2 、350℃以上的條件進行接合，能夠更確實地黏接，而為佳。Next, as shown in FIG. 3, the first dielectric film 112 is opposed to the second dielectric film 122, and pressure and heat are applied in a vacuum or reduced pressure atmosphere to move the first dielectric film 112 and The second dielectric film 122 is directly bonded to form the dielectric film 132 and the bonding substrate 130 is formed. The pressure bonding is carried out under the conditions of a pressure of 6 N/cm 2 or more and a temperature of 150° C. or more. In particular, if the bonding is performed under the conditions of 30 N/cm 2 and 350° C. or higher, the bonding can be performed more reliably, which is preferable.

其次，如第4圖所示，自接合基板130藉由化學性蝕刻將起始基板100除去。化學性蝕刻液係對AlGaInP系材料有蝕刻選擇性者為佳，一般而言以含氨蝕刻劑進行除去。起始基板100除去後，將選擇蝕刻層102除去，而形成具有第一表面(非除去部135)的構造131。選擇蝕刻層102係以蝕刻AlGaInP系材料的雙氧水與酸的混合液進行除去。Next, as shown in FIG. 4, the self-bonding substrate 130 removes the starting substrate 100 by chemical etching. The chemical etching liquid system is preferably one that has an etching selectivity for the AlGaInP-based material, and is generally removed with an ammonia-containing etchant. After the starting substrate 100 is removed, the selective etching layer 102 is removed to form a structure 131 having a first surface (non-removed portion 135). The etching layer 102 is selected to etch and remove the mixture of hydrogen peroxide and acid of the AlGaInP-based material.

亦可於起始基板100的除去前後，將可見透明基板(窗層兼支承基板120)的接合面的反對的面藉由研光或蝕刻而使之粗糙，追加設置具備反射防止效果的構造。Before and after the removal of the starting substrate 100, the opposite surface of the visible bonding surface of the transparent substrate (window layer and supporting substrate 120) may be roughened by polishing or etching, and a structure having an anti-reflection effect may be additionally provided.

其次，如第5圖所示，從構造131將第一表面(非除去部135)的一部分切除，而形成第二表面(除去部136)。Next, as shown in FIG. 5, a part of the first surface (non-removed portion 135) is cut away from the structure 131 to form a second surface (removed portion 136).

其次，如第6圖所示，以將經切除的側面137包覆的方式，形成第三介電質層180，設置開口部181。第三介電質層180以SiO2 或SiNx 為佳。第三介電質層180的製膜方法能夠選擇融膠凝膠法、濺鍍法及CVD法中任一種的方法。其次，將開口部181，於成膜第三介電質層180後，藉由光刻法形成遮罩部，藉由BHF的濕式蝕刻法形成露出部。Next, as shown in FIG. 6, a third dielectric layer 180 is formed so as to cover the cut side surface 137, and an opening 181 is provided. The third dielectric layer 180 is preferably SiO 2 or SiN x . The film forming method of the third dielectric layer 180 can be any of the melt gel method, the sputtering method, and the CVD method. Next, after the third dielectric layer 180 is formed, the opening portion 181 is formed, and the mask portion is formed by photolithography, and the exposed portion is formed by BHF wet etching.

其次，如第7圖所示，於第一表面(非除去部135)的一部分形成第一歐姆電極185，於第二表面(除去部136)的一部分形成第二歐姆電極186。Next, as shown in FIG. 7, a first ohmic electrode 185 is formed on a portion of the first surface (non-removed portion 135 ), and a second ohmic electrode 186 is formed on a portion of the second surface (removed portion 136 ).

其次，如第8圖所示，藉由光刻膠，形成包覆第一表面(非除去部135)整體及第二表面(除去部136)的一部分的包覆部190及開口部191。Next, as shown in FIG. 8, a photoresist is used to form a covering portion 190 and an opening 191 that cover the entire first surface (non-removed portion 135) and part of the second surface (removed portion 136 ).

其次，如第9圖所示，藉由乾式蝕刻法除去開口部191，使窗層兼支承基板120的一部分露出，形成露出部192。AlGaInP層的除去，能夠在ICP裝置內，藉由含Cl2 氣體及Ar的混合氛圍進行，SiO2 或SiNx 的介電質層的除去能夠藉由含F氣體及Ar的混合氛圍進行。壓力氛圍為0.5Pa，輸出功率為電漿300W。使用含Cl2 氣體的層的除去及使用含F氣體的層的除去，也能夠在各別的艙室進行。Next, as shown in FIG. 9, the opening 191 is removed by dry etching to expose a part of the window layer and support substrate 120 to form an exposed portion 192. The removal of the AlGaInP layer can be performed in the ICP device by a mixed atmosphere containing Cl 2 gas and Ar, and the removal of the SiO 2 or SiN x dielectric layer can be performed by a mixed atmosphere of F gas and Ar. The pressure atmosphere is 0.5Pa and the output power is 300W plasma. The removal of the layer using Cl 2 gas and the removal of the layer using F gas can also be performed in separate cabins.

其次，如第10圖所示，除去包覆部190。包覆部190除去後，對露出部192照射雷射而形成刻劃部193。然後，將刻劃前的發光元件1000，沿著刻劃部193進行劈裂處理，進行晶粒化而製造發光元件。Next, as shown in FIG. 10, the covering portion 190 is removed. After the covering portion 190 is removed, the exposed portion 192 is irradiated with laser light to form the scoring portion 193. Then, the light-emitting element 1000 before scribing is subjected to cleavage treatment along the scribing portion 193 to be crystallized to manufacture the light-emitting element.

若為如此的發光元件的製造方法，由於藉由反射防止層111的存在，能夠將發光部108所發射的光在介電質膜的反射予以抑制，而能夠提供得以提升光提取效率的發光元件。In such a method for manufacturing a light-emitting element, the presence of the anti-reflection layer 111 can suppress the reflection of the light emitted by the light-emitting portion 108 in the dielectric film, and can provide a light-emitting element with improved light extraction efficiency .

［第二實施樣貌的發光元件］ 其次說明本發明的第二實施樣貌的發光元件。[Light-emitting element of the second embodiment] Next, a light-emitting element according to a second embodiment of the present invention will be described.

第20圖表示本發明的第二實施樣貌的刻劃前的發光元件2000的示意圖。FIG. 20 shows a schematic view of a light-emitting element 2000 before scribing according to the second embodiment of the present invention.

如第20圖所示，本發明的第二實施樣貌的發光元件，於由GaP、GaAsP、藍寶石等所成的作為窗層兼支承基板220的透明基板，於透明基板的表面上形成有厚度0.05~1.0μm的第二介電質膜222及相同厚度0.05~1.0μm的第一介電質膜212。作為介電質膜，能夠採用SiO2 或SiNx 。As shown in FIG. 20, the light-emitting element of the second embodiment of the present invention has a thickness formed on the surface of the transparent substrate as a window layer and supporting substrate 220 made of GaP, GaAsP, sapphire, etc. The second dielectric film 222 of 0.05-1.0 μm and the first dielectric film 212 of the same thickness of 0.05-1.0 μm. As the dielectric film, SiO 2 or SiN x can be used.

於第一介電質膜212之上，將具有光反射防止功能的反射防止層211予以配置。On the first dielectric film 212, a reflection prevention layer 211 having a light reflection prevention function is disposed.

於其之上形成有發光部208，發光部208依序包括由Alz Ga1-z As(0≦z≦1)或GaAsw P1-w (0≦w≦1)所成的厚度0.5~5.0μm的電流擴散層207、由InGaP或AlInP所成的厚度0.1~1.0μm的中間組成層206、由(Alx Ga1-x )y In1-y P(0≦x≦1、0≦y≦1)或Alz Ga1-z As(0≦z≦1)所成的厚度0.5~1.0μm的第二導電型的第二半導體層205、厚度0.1~1.0μm的活性層204及厚度0.5~1.0μm的第一導電型的第一半導體層203。A light-emitting portion 208 is formed thereon, and the light-emitting portion 208 sequentially includes a thickness of 0.5 made of Al z Ga 1-z As (0≦z≦1) or GaAs w P 1-w (0≦w≦1) ~5.0μm current diffusion layer 207, intermediate composition layer 206 made of InGaP or AlInP with a thickness of 0.1~1.0μm, consisting of (Al x Ga 1-x ) y In 1-y P (0≦x≦1, 0 ≦y≦1) or Al z Ga 1-z As (0≦z≦1), a second conductivity type second semiconductor layer 205 with a thickness of 0.5 to 1.0 μm, an active layer 204 with a thickness of 0.1 to 1.0 μm, and The first semiconductor layer 203 of the first conductivity type having a thickness of 0.5 to 1.0 μm.

活性層204係根據發光波長而以(Alx Ga1-x )y In1-y P(0≦x≦1、0.4≦y≦0.6)或Alz Ga1-z As(0≦z≦0.45)形成。應用於可見光照明的場合，選擇AlGaInP為佳，應用於紅外線照明的場合，選擇AlGaAs或InGaAs為佳。但是，關於活性層204的設計，由於藉由超晶格等的利用，能夠將提取波長調整為起因於材料組成的合適的波長以外，故不限於上述材料。The active layer 204 is (Al x Ga 1-x ) y In 1-y P (0≦x≦1, 0.4≦y≦0.6) or Al z Ga 1-z As(0≦z≦0.45) according to the emission wavelength )form. It is better to choose AlGaInP for the application of visible light illumination, and choose AlGaAs or InGaAs for the application of infrared illumination. However, the design of the active layer 204 can adjust the extraction wavelength beyond the appropriate wavelength due to the material composition by using a superlattice or the like, so it is not limited to the above materials.

第一半導體層203及第二半導體層205係選擇AlGaInP或AlGaAs，該選擇不一定要與活性層204為相同的材料系。For the first semiconductor layer 203 and the second semiconductor layer 205, AlGaInP or AlGaAs is selected, and this selection does not necessarily have to be the same material system as the active layer 204.

進一步，此發光元件具有活性層204及第一導電型的第一半導體層203被除去的除去部236，以及除去部236以外的非除去部235。此時，也能夠將第二導電型的第二半導體層205及中間組成層206也除去而成為除去部。然後，具有設置於非除去部235的第一半導體層203的表面上的第一歐姆電極285，以及設置於除去部236的表面上的第二歐姆電極286。Further, this light-emitting element has a removed portion 236 from which the active layer 204 and the first conductive type first semiconductor layer 203 are removed, and a non-removed portion 235 other than the removed portion 236. At this time, the second semiconductor layer 205 of the second conductivity type and the intermediate composition layer 206 can also be removed to become a removed portion. Then, there is a first ohmic electrode 285 provided on the surface of the first semiconductor layer 203 of the non-removed portion 235 and a second ohmic electrode 286 provided on the surface of the removed portion 236.

若為如此的發光元件，由於藉由反射防止層211的存在，能夠將發光部208所發射的光在介電質膜的反射予以抑制，而能夠提升光提取效率。In the case of such a light-emitting element, the presence of the anti-reflection layer 211 can suppress the reflection of the light emitted by the light-emitting portion 208 in the dielectric film, thereby improving the light extraction efficiency.

根據與第一實施樣貌的發光元件同樣的理由，反射防止層211係選擇折射率低於窗層兼支承基板220的折射率且高於介電質膜的折射率的1.6以上2.9以下程度的材料為佳。較佳為2~2.5的範圍。反射防止層211具體而言為AlN、GaN、Ta2 O3 、TiO2 、ZnS及ZnSe等。再者，反射防止層211以雙層以上構成也能得到同樣的效果。For the same reason as the light-emitting element of the first embodiment, the antireflection layer 211 is selected to have a refractive index lower than the refractive index of the window layer and support substrate 220 and higher than the refractive index of the dielectric film by 1.6 or more and 2.9 or less The material is better. It is preferably in the range of 2 to 2.5. The anti-reflection layer 211 is specifically AlN, GaN, Ta 2 O 3 , TiO 2 , ZnS, ZnSe, and the like. In addition, the anti-reflection layer 211 can be configured with more than two layers to obtain the same effect.

若為如此的介電質膜及反射防止層，能夠更確實地使光提取效率提升。With such a dielectric film and anti-reflection layer, the light extraction efficiency can be more reliably improved.

此發光元件的第一介電質膜212及第二介電質膜222，透過黏接劑而接合，形成介電質膜232，而能夠實現接合瑕疵所致的剝離為少的接合。The first dielectric film 212 and the second dielectric film 222 of the light-emitting element are bonded by an adhesive to form a dielectric film 232, and bonding with less peeling due to bonding defects can be achieved.

［第二實施樣貌的發光元件的製造方法］ 其次，使用第11圖至第20圖而說明第二實施樣貌的發光元件的製造方法。[Manufacturing method of light-emitting element of the second embodiment] Next, a method of manufacturing the light-emitting element according to the second embodiment will be described using FIGS. 11 to 20.

最初，如第11圖所示，準備結晶軸自[001]方向朝[110]方向傾斜的起始基板200。作為起始基板200，能夠合適地使用GaAs或Ge。若起始基板200選自上述材料，由於能夠將該活性層204的材料以晶格匹配系進行磊晶成長，故易使活性層的品質提升，能夠得到輝度上升及壽命特性的提升。Initially, as shown in FIG. 11, a starting substrate 200 whose crystal axis is inclined from the [001] direction toward the [110] direction is prepared. As the starting substrate 200, GaAs or Ge can be suitably used. If the starting substrate 200 is selected from the above materials, since the material of the active layer 204 can be epitaxially grown in a lattice matching system, it is easy to improve the quality of the active layer, and the brightness and life characteristics can be improved.

其次，於起始基板200上，藉由例如MOVPE法(有機金屬氣相沉積法)、MBE(分子束磊晶法)或CBE(化學束磊晶法)，以例如由(Alx Ga1-x )y In1-y P(0≦x≦1、0≦y≦1)或Alz Ga1-z As(0≦z≦1)所成的厚度0.5~1.0μm的第一導電型的第一半導體層203、厚度0.1~1.0μm的活性層204、以及厚度0.5~1.0μm的第二導電型的第二半導體層205的順序使之磊晶成長。於其之上，使厚度0.1~1.0μm的中間組成層206及厚度0.5~5.0μm的電流擴散層207磊晶成長，形成含有發光部208的積層構造，而製作發光元件用晶圓210。Next, on the starting substrate 200, for example, by MOVPE method (organic metal vapor deposition method), MBE (molecular beam epitaxy method) or CBE (chemical beam epitaxy method), for example by (Al x Ga 1- x ) y In 1-y P (0≦x≦1, 0≦y≦1) or Al z Ga 1-z As (0≦z≦1) of the first conductivity type with a thickness of 0.5 to 1.0 μm The first semiconductor layer 203, the active layer 204 with a thickness of 0.1-1.0 μm, and the second semiconductor layer 205 of the second conductivity type with a thickness of 0.5-1.0 μm are sequentially epitaxially grown. On it, the intermediate composition layer 206 with a thickness of 0.1-1.0 μm and the current diffusion layer 207 with a thickness of 0.5-5.0 μm are epitaxially grown to form a layered structure including the light-emitting portion 208 to fabricate a wafer 210 for light-emitting elements.

再者，於起始基板200與第一半導體層203之間，***基板除去用的選擇蝕刻層202。Furthermore, between the starting substrate 200 and the first semiconductor layer 203, a selective etching layer 202 for substrate removal is inserted.

作為電流擴散層207，能夠合適地使用AlGaAs、GaAsP或GaP。以GaAsx P1-x (0≦x＜1)形成電流擴散層207的場合，中間組成層206以InGaP或AlInP形成為合適。由於當GaAsx P1-x (x≠1)及AlGaInP系材料或AlGaAs系材料之間存在晶格不匹配，故GaAsx P1-x (x≠1)會有高密度的應變及貫穿差排。貫穿差排密度能夠藉由組成x以調整。As the current diffusion layer 207, AlGaAs, GaAsP, or GaP can be suitably used. When the current diffusion layer 207 is formed of GaAs x P 1-x (0≦x<1), the intermediate composition layer 206 is preferably formed of InGaP or AlInP. Due to lattice mismatch between GaAs x P 1-x (x≠1) and AlGaInP-based materials or AlGaAs-based materials, GaAs x P 1-x (x≠1) will have high-density strain and penetration difference row. Through-row density can be adjusted by composition x.

其次，於電流擴散層207上配置具有光反射防止功能的反射防止層211。反射防止層211係選擇折射率低於GaP的折射率且高於介電質膜的折射率的1.6以上2.9以下程度的材料為佳。較佳為2~2.5的範圍。具體而言為AlN、GaN、SiNx、Ta2 O3 、TiO2 、ZnS及ZnSe等。再者，反射防止層211以雙層以上構成也能得到同樣的效果。Next, an anti-reflection layer 211 having an anti-reflection function is arranged on the current diffusion layer 207. For the anti-reflection layer 211, it is preferable to select a material having a refractive index lower than that of GaP and higher than the refractive index of the dielectric film by about 1.6 or more and 2.9 or less. It is preferably in the range of 2 to 2.5. Specifically, it is AlN, GaN, SiNx, Ta 2 O 3 , TiO 2 , ZnS, ZnSe, and the like. In addition, the anti-reflection layer 211 can be configured with more than two layers to obtain the same effect.

若為如此的介電質膜及反射防止層，能夠更確實地使光提取效率提升。With such a dielectric film and anti-reflection layer, the light extraction efficiency can be more reliably improved.

其次，於反射防止層211上，將由SiO2 或SiNx 所成的第一介電質膜212以例如厚度0.4μm形成。Next, on the anti-reflection layer 211, a first dielectric film 212 made of SiO 2 or SiN x is formed with a thickness of 0.4 μm, for example.

其次，例如將BCB黏接劑藉由旋轉塗布進行塗布而形成第一黏接層213。雖然第一黏接層213的厚度會隨著BCB黏接劑的黏度及旋轉塗布時的轉速而改變，但是能夠藉由例如轉速5000rpm而成為0.5μm的厚度。Next, for example, the BCB adhesive is applied by spin coating to form the first adhesive layer 213. Although the thickness of the first adhesive layer 213 varies with the viscosity of the BCB adhesive and the rotation speed during spin coating, it can be 0.5 μm thickness by, for example, a rotation speed of 5000 rpm.

其次，如第12圖所示，於GaP、藍寶石或石英等的窗層兼支承基板220上形成由SiO2 或SiNx 所成的介電質膜222。Next, as shown in FIG. 12, a dielectric film 222 made of SiO 2 or SiN x is formed on the window layer and support substrate 220 of GaP, sapphire, quartz, or the like.

其次，例如塗布BCB黏接劑而形成第二黏接層223。雖然第二黏接層223的厚度會隨著BCB黏接劑的黏度及旋轉塗布時的轉速而改變，但是能夠藉由例如轉速5000rpm而成為0.5μm的厚度。雖然表示了使用BCB作為黏接材的場合的範例，但是亦可藉由環氧樹脂等其他透明且在常溫下為液狀的構件，形成第一黏接層213及第二黏接層223。Next, for example, a BCB adhesive is applied to form the second adhesive layer 223. Although the thickness of the second adhesive layer 223 varies depending on the viscosity of the BCB adhesive and the rotation speed during spin coating, it can be 0.5 μm thickness by, for example, a rotation speed of 5000 rpm. Although the example of using BCB as the adhesive material is shown, the first adhesive layer 213 and the second adhesive layer 223 may be formed by other transparent and liquid components at room temperature such as epoxy resin.

其次，如第13圖所示，使第一黏接層213與第二黏接層223相對向，並且在真空或減壓氛圍下施加壓力及熱而將第一黏接層213與第二黏接層223藉由黏接劑接合，形成介電質膜232，而形成接合基板230。以壓力6N/cm2 以上，溫度100℃以上的條件進行壓接，而進行黏接。特別是，若以達到30N/cm2 、300℃以上的條件進行接合，能夠更確實地黏接，而為佳。Next, as shown in FIG. 13, the first adhesive layer 213 and the second adhesive layer 223 are opposed to each other, and the first adhesive layer 213 and the second adhesive layer 213 and the second adhesive layer are applied with pressure and heat under a vacuum or reduced pressure atmosphere. The bonding layer 223 is bonded by an adhesive to form a dielectric film 232, and a bonding substrate 230 is formed. The pressure bonding is carried out under the conditions of a pressure of 6 N/cm 2 or more and a temperature of 100° C. or more. In particular, if the bonding is performed under the conditions of 30 N/cm 2 and 300° C. or higher, the bonding can be performed more reliably, which is preferable.

其次，如第14圖所示，自接合基板230藉由化學性蝕刻將起始基板200除去。化學性蝕刻液係對AlGaInP系材料有蝕刻選擇性者為佳，一般而言以含氨蝕刻劑進行除去。GaAs基板(起始基板200)除去後，將選擇蝕刻層202除去，而形成具有第一表面(非除去部235)的構造231。選擇蝕刻層202係以蝕刻AlGaInP系材料的雙氧水與酸的混合液進行除去。Next, as shown in FIG. 14, the self-bonding substrate 230 removes the starting substrate 200 by chemical etching. The chemical etching liquid system is preferably one that has an etching selectivity for the AlGaInP-based material, and is generally removed with an ammonia-containing etchant. After the GaAs substrate (starting substrate 200) is removed, the selective etching layer 202 is removed to form a structure 231 having a first surface (non-removed portion 235). The etching layer 202 is selected to etch and remove the mixture of hydrogen peroxide and acid of the AlGaInP-based material.

亦可於起始基板200的除去前後，將可見透明基板(窗層兼支承基板220)的接合面的反對的面藉由研光或蝕刻而使之粗糙，追加具備反射防止效果的構造而設置。The surface opposite to the bonding surface of the transparent substrate (window layer and support substrate 220) can be roughened by polishing or etching before and after the removal of the starting substrate 200, and a structure with an anti-reflection effect can be added .

其次，如第15圖所示，從構造231將第一表面(非除去部235)的一部分切除，而形成第二表面(除去部236)。Next, as shown in FIG. 15, a part of the first surface (non-removed portion 235) is cut away from the structure 231 to form a second surface (removed portion 236).

其次，如第16圖所示，以將經切除的側面237包覆的方式，形成第三介電質層280，設置開口部281。第三介電質層280以SiO2 或SiNx 為佳。第三介電質層280的製膜方法能夠選擇融膠凝膠法、濺鍍法及CVD法中任一種的方法。其次，將開口部281，於成膜第三介電質層280後，藉由光刻法形成遮罩部，藉由BHF的濕式蝕刻法形成露出部。Next, as shown in FIG. 16, a third dielectric layer 280 is formed so as to cover the cut side surface 237, and an opening 281 is provided. The third dielectric layer 280 is preferably SiO 2 or SiN x . The film forming method of the third dielectric layer 280 can be any of the melt gel method, the sputtering method, and the CVD method. Next, after the third dielectric layer 280 is formed, the opening 281 is formed, and the mask part is formed by photolithography, and the exposed part is formed by the wet etching method of BHF.

其次，如第17圖所示，於第一表面(非除去部235)的一部分形成第一歐姆電極285，於第二表面(除去部236)的一部分形成第二歐姆電極286。Next, as shown in FIG. 17, a first ohmic electrode 285 is formed on a part of the first surface (non-removed portion 235), and a second ohmic electrode 286 is formed on a part of the second surface (removed portion 236).

其次，如第18圖所示，藉由光刻膠，形成包覆第一表面(非除去部235)整體及第二表面(除去部236)的一部分的包覆部290及開口部291。Next, as shown in FIG. 18, a photoresist is used to form a covering portion 290 and an opening portion 291 that cover the entire first surface (non-removed portion 235) and part of the second surface (removed portion 236).

其次，如第19圖所示，藉由乾式蝕刻法除去開口部291，使窗層兼支承基板220的一部分露出，形成露出部292。AlGaInP層的除去，能夠在ICP裝置內，藉由含Cl2 氣體及Ar的混合氛圍進行，SiO2 或SiNx 的介電質層及BCB層的除去能夠藉由含F氣體及Ar的混合氛圍進行。壓力氛圍為0.5Pa，輸出功率為電漿300W。使用含Cl2 氣體的層的除去及使用含F氣體的層的除去，也能夠在各自的艙室進行。Next, as shown in FIG. 19, the opening 291 is removed by dry etching, and a part of the window layer and supporting substrate 220 is exposed to form an exposed portion 292. The AlGaInP layer can be removed in the ICP device by a mixed atmosphere containing Cl 2 gas and Ar, and the SiO 2 or SiN x dielectric layer and the BCB layer can be removed by a mixed atmosphere containing F gas and Ar get on. The pressure atmosphere is 0.5Pa and the output power is 300W plasma. The removal of the layer using Cl 2 gas and the removal of the layer using F gas can also be performed in the respective compartments.

其次，如第20圖所示，除去包覆部290。包覆部290除去後，對露出部292照射雷射而形成刻劃部293。然後，將刻劃前的發光元件2000，沿著刻劃部293進行劈裂處理，進行晶粒化而製造發光元件。Next, as shown in FIG. 20, the covering portion 290 is removed. After the covering portion 290 is removed, the exposed portion 292 is irradiated with laser light to form the scoring portion 293. Then, the light-emitting element 2000 before scribing is subjected to a cleaving process along the scribing portion 293 to be crystallized to produce a light-emitting element.

若為如此的發光元件的製造方法，由於藉由反射防止層211的存在，能夠將發光部208所發射的光在介電質膜的反射予以抑制，而能夠提供得以提升光提取效率的發光元件。 ［實施例］According to such a method of manufacturing a light-emitting element, the presence of the anti-reflection layer 211 can suppress the reflection of the light emitted by the light-emitting portion 208 in the dielectric film, and can provide a light-emitting element with improved light extraction efficiency . [Example]

以下使用實施例及比較例而具體地說明本發明，但是本發明並不限定於此。The present invention will be specifically described below using Examples and Comparative Examples, but the present invention is not limited thereto.

［實施例一］ 將如第10圖所示的刻劃前的發光元件刻劃，而製造10000個發光元件。具體而言，於由GaP所成的窗層兼支承基板上，形成有由SiO2 所成的厚度0.5μm的第二介電質膜、同樣由SiO2 所成的厚度0.5μm的第一介電質膜及其之上由TiO2 (折射率2.493)所成的反射防止層，進一步形成有發光部，該發光部依序包含由AlGaAs所成的厚度1.0μm的電流擴散層、由AlInP所成的厚度0.5μm的中間組成層、由AlGaInP所成的厚度1.0μm的p型的第二半導體層、厚度0.5μm的活性層及厚度1.0μm的n型的第一半導體層。進一步，具有已除去活性層及第一導電型的第一半導體層的除去部，以及除去部以外的非除去部。然後，於非除去部的第一半導體層的表面上具有由AuGeNi所成的厚度500nm的第一歐姆電極，以及於除去部的第二半導體層的表面上具有由AuBe所成的厚度500nm的第二歐姆電極。再者，第一介電質膜與第二介電質膜以30N/cm2 、350℃的條件，不透過黏接劑而直接接合(實施例一之一)。[Example 1] The light-emitting element before scoring as shown in FIG. 10 was scribed, and 10,000 light-emitting elements were manufactured. Specifically, on the GaP window layer formed between the substrate and the support, it is formed of SiO 2 to a thickness of the second dielectric film of 0.5μm, likewise via the first SiO 2 is formed by a thickness of 0.5μm The electro-chemical film and the anti-reflection layer made of TiO 2 (refractive index 2.493) on it further form a light-emitting portion including a current diffusion layer made of AlGaAs with a thickness of 1.0 μm and AlInP An intermediate composition layer having a thickness of 0.5 μm, a p-type second semiconductor layer having a thickness of 1.0 μm made of AlGaInP, an active layer having a thickness of 0.5 μm, and an n-type first semiconductor layer having a thickness of 1.0 μm. Furthermore, it has a removed portion from which the active layer and the first conductivity type first semiconductor layer have been removed, and a non-removed portion other than the removed portion. Then, on the surface of the first semiconductor layer of the non-removed portion, there is a first ohmic electrode made of AuGeNi with a thickness of 500 nm, and on the surface of the second semiconductor layer of the removed portion, there is a first thickness of 500 nm with AuBe Two-ohm electrode. Furthermore, the first dielectric film and the second dielectric film are directly bonded at 30 N/cm 2 and 350° C. without using an adhesive (one of the first embodiment).

再者，除了不以TiO2 而是使用下列所記載的材料製造反射防止層以外，與實施例一之一同樣地製造發光元件(實施例一之二至一之六)。作為反射防止層的材料，使用AlN(折射率2.164)(實施例一之二)。作為反射防止層的材料，使用Ta2 O3 (折射率2.165)(實施例一之三)。作為反射防止層的材料，使用ZnS(折射率2.355)(實施例一之四)。作為反射防止層的材料，使用GaN(折射率2.38)(實施例一之五)。作為反射防止層的材料，使用ZnSe(折射率2.599)(實施例一之六)。In addition, a light-emitting element was produced in the same manner as in the first embodiment, except that the antireflection layer was manufactured using the following materials instead of TiO 2 . As the material of the antireflection layer, AlN (refractive index 2.164) (Example 1 bis) was used. As the material of the antireflection layer, Ta 2 O 3 (refractive index 2.165) (Example 1 ter) was used. As the material of the antireflection layer, ZnS (refractive index 2.355) (Example 1 quater) was used. As a material of the anti-reflection layer, GaN (refractive index 2.38) (Example 5) is used. As the material of the antireflection layer, ZnSe (refractive index 2.599) (Example 6) was used.

［實施例二］ 將如第20圖所示的刻劃前的發光元件刻劃，而製造10000個發光元件。具體而言，於由GaP所成的窗層兼支承基板上，形成有由SiO2 所成的厚度0.5μm的第二介電質膜、同樣由SiO2 所成的厚度0.5μm的第一介電質膜及其之上由TiO2 所成的反射防止層，進一步形成有發光部，該發光部依序包含由AlGaAs所成的厚度1.0μm的電流擴散層、由AlInP所成的厚度0.5μm的中間組成層、由AlGaInP所成的厚度1.0μm的p型的第二半導體層、厚度0.5μm的活性層及厚度1.0μm的n型的第一半導體層，進一步，具有已除去活性層及第一導電型的第一半導體層的除去部，以及除去部以外的非除去部。然後，於非除去部的第一半導體層的表面上具有由AuGeNi所成的厚度500nm的第一歐姆電極，以及於除去部的第二半導體層的表面上具有由AuBe所成的厚度500nm的第二歐姆電極。再者，第一SiO2 膜與第二SiO2 膜係透過BCB黏接層並以30N/cm2 、350℃的條件接合。[Example 2] The light-emitting element before scoring as shown in FIG. 20 was scribed, and 10,000 light-emitting elements were manufactured. Specifically, on the GaP window layer formed between the substrate and the support, it is formed of SiO 2 to a thickness of the second dielectric film of 0.5μm, likewise via the first SiO 2 is formed by a thickness of 0.5μm The electro-chemical film and the anti-reflection layer made of TiO 2 thereon are further formed with a light-emitting portion including a current diffusion layer made of AlGaAs with a thickness of 1.0 μm and a thickness made of AlInP with a thickness of 0.5 μm Intermediate composition layer, a p-type second semiconductor layer with a thickness of 1.0 μm made of AlGaInP, an active layer with a thickness of 0.5 μm, and an n-type first semiconductor layer with a thickness of 1.0 μm, further including an active layer and a A removed portion of a conductive first semiconductor layer, and a non-removed portion other than the removed portion. Then, on the surface of the first semiconductor layer of the non-removed portion, there is a first ohmic electrode made of AuGeNi with a thickness of 500 nm, and on the surface of the second semiconductor layer of the removed portion, there is a first thickness of 500 nm with AuBe Two-ohm electrode. In addition, the first SiO 2 film and the second SiO 2 film are bonded through the BCB adhesive layer at 30 N/cm 2 and 350°C.

［比較例］ 除了沒有形成反射防止層以外，與實施例一之一同樣地製造10000個發光元件。[Comparative example] Except that the anti-reflection layer was not formed, 10,000 light-emitting elements were manufactured in the same manner as in the first embodiment.

將關於實施例一的改變反射防止層的材質者(實施例一之一至一之六)及比較例的發光的積分輸出功率的改善率表示於第21圖。再者，將實施例一之一、實施例二及比較例的發光的積分輸出功率的改善率表示於第22圖。將沒有反射防止層的場合(比較例)的積分輸出功率定為100%時的各實施例的積分輸出功率定為改善率。The improvement rate of the integrated output power of light emission of the person who changed the material of the anti-reflection layer (one to one-sixth of the first example) and the comparative example in Example 1 is shown in FIG. 21. In addition, FIG. 22 shows the improvement rate of the integrated output power of light emission in the first example, the second example, and the comparative example. When the integrated output power of the case where there is no antireflection layer (comparative example) is set to 100%, the integrated output power of each example is determined as the improvement rate.

由此得知，如此具有反射防止層的場合，相較於沒有反射防止層的場合(比較例)積分輸出功率大大地改善。因此，本發明的發光元件能夠將發光部所發射的光在介電質膜的反射予以抑制，而能夠提升光提取效率。From this, it can be seen that when such an anti-reflection layer is provided, the integrated output power is greatly improved compared to the case where there is no anti-reflection layer (comparative example). Therefore, the light-emitting element of the present invention can suppress the reflection of the light emitted by the light-emitting portion in the dielectric film, and can improve the light extraction efficiency.

此外，本發明並不限定於上述的實施例。上述實施例為舉例說明，凡具有與本發明的申請專利範圍所記載之技術思想實質上同樣之構成，產生相同的功效者，不論為何物皆包含在本發明的技術範圍內。In addition, the present invention is not limited to the above-mentioned embodiments. The above-mentioned embodiments are examples, and anyone who has substantially the same structure as the technical idea described in the patent application scope of the present invention and produces the same effect, regardless of what is included in the technical scope of the present invention.

100‧‧‧起始基板 102‧‧‧選擇蝕刻層 103‧‧‧第一半導體層 104‧‧‧活性層 105‧‧‧第二半導體層 106‧‧‧中間組成層 107‧‧‧電流擴散層 108‧‧‧發光部 110‧‧‧發光元件用晶圓 111‧‧‧反射防止層 112‧‧‧第一介電質膜 120‧‧‧窗層兼支承基板 122‧‧‧第二介電質膜 130‧‧‧接合基板 131‧‧‧構造 132‧‧‧介電質膜 135‧‧‧非除去部 136‧‧‧除去部 137‧‧‧側面 180‧‧‧第三介電質層 181‧‧‧開口部 185‧‧‧第一歐姆電極 186‧‧‧第二歐姆電極 190‧‧‧包覆部 191‧‧‧開口部 192‧‧‧露出部 193‧‧‧刻劃部 1000‧‧‧刻劃前的發光元件 200‧‧‧起始基板 202‧‧‧選擇蝕刻層 203‧‧‧第一半導體層 204‧‧‧活性層 205‧‧‧第二半導體層 206‧‧‧中間組成層 207‧‧‧電流擴散層 208‧‧‧發光部 210‧‧‧發光元件用晶圓 211‧‧‧反射防止層 212‧‧‧第一介電質膜 213‧‧‧第一黏接層 220‧‧‧窗層兼支承基板 222‧‧‧第二介電質膜 223‧‧‧第二黏接層 230‧‧‧接合基板 231‧‧‧構造 232‧‧‧介電質膜 235‧‧‧非除去部 236‧‧‧除去部 237‧‧‧側面 280‧‧‧第三介電質層 281‧‧‧開口部 285‧‧‧第一歐姆電極 286‧‧‧第二歐姆電極 290‧‧‧包覆部 291‧‧‧開口部 292‧‧‧露出部 293‧‧‧刻劃部 2000‧‧‧刻劃前的發光元件 100‧‧‧Starting substrate 102‧‧‧Selection etching layer 103‧‧‧First semiconductor layer 104‧‧‧active layer 105‧‧‧Second semiconductor layer 106‧‧‧ Middle layer 107‧‧‧Current diffusion layer 108‧‧‧Lighting Department 110‧‧‧ Wafer for light emitting element 111‧‧‧Reflection prevention layer 112‧‧‧First dielectric film 120‧‧‧Window layer and supporting substrate 122‧‧‧Second dielectric film 130‧‧‧bond substrate 131‧‧‧Structure 132‧‧‧Dielectric film 135‧‧‧non-removal department 136‧‧‧Exclude Department 137‧‧‧Side 180‧‧‧third dielectric layer 181‧‧‧ opening 185‧‧‧The first ohmic electrode 186‧‧‧The second ohm electrode 190‧‧‧Clad part 191‧‧‧ opening 192‧‧‧ exposed part 193‧‧‧Scribe Department 1000‧‧‧Light-emitting element before scoring 200‧‧‧Starting substrate 202‧‧‧Select etching layer 203‧‧‧The first semiconductor layer 204‧‧‧active layer 205‧‧‧Second semiconductor layer 206‧‧‧ Middle layer 207‧‧‧current diffusion layer 208‧‧‧Lighting Department 210‧‧‧ Wafer for light emitting element 211‧‧‧reflection prevention layer 212‧‧‧First dielectric film 213‧‧‧The first adhesive layer 220‧‧‧Window layer and supporting substrate 222‧‧‧Second dielectric film 223‧‧‧Second adhesive layer 230‧‧‧bond substrate 231‧‧‧Structure 232‧‧‧Dielectric film 235‧‧‧ Non-removal department 236‧‧‧Exclude Department 237‧‧‧Side 280‧‧‧third dielectric layer 281‧‧‧Opening 285‧‧‧The first ohmic electrode 286‧‧‧The second ohm electrode 290‧‧‧Clad part 291‧‧‧Opening 292‧‧‧ exposed part 293‧‧‧Scribe Department 2000‧‧‧Lighting element before scribing

［第1圖］係本發明的第一實施樣貌之中形成有反射防止層及第一介電質膜的發光元件用晶圓的示意圖。 ［第2圖］係本發明的第一實施樣貌之中形成有介電質膜的窗層兼支承基板的示意圖。 ［第3圖］係在本發明的第一實施樣貌中形成的接合基板的示意圖。 ［第4圖］係本發明的第一實施樣貌之中經除去起始基板及選擇蝕刻層的構造的示意圖。 ［第5圖］係本發明的第一實施樣貌之中形成有除去部的構造的示意圖。 ［第6圖］係本發明的第一實施樣貌之中形成有第三介電質層且設置有開口部的構造的示意圖。 ［第7圖］係本發明的第一實施樣貌之中形成有第一歐姆電極及第二歐姆電極的構造的示意圖。 ［第8圖］係本發明的第一實施樣貌之中形成有包覆部及開口部的構造的示意圖。 ［第9圖］係本發明的第一實施樣貌之中使窗層兼支承基板的一部分露出的構造的示意圖。 ［第10圖］係本發明的第一實施樣貌的刻劃前的發光元件的示意圖。 ［第11圖］係本發明的第二實施樣貌之中形成有反射防止層、第一介電質膜及第一黏接層的發光元件用晶圓的示意圖。 ［第12圖］係本發明的第二實施樣貌之中形成有介電質膜及第二黏接層的窗層兼支承基板的示意圖。 ［第13圖］係在本發明的第二實施樣貌中形成的接合基板的示意圖。 ［第14圖］係本發明的第二實施樣貌之中經除去起始基板及選擇蝕刻層的構造的示意圖。 ［第15圖］係本發明的第二實施樣貌之中形成有除去部的構造的示意圖。 ［第16圖］係本發明的第二實施樣貌之中形成有第三介電質層且設置有開口部的構造的示意圖。 ［第17圖］係本發明的第二實施樣貌之中形成有第一歐姆電極及第二歐姆電極的構造的示意圖。 ［第18圖］係本發明的第二實施樣貌之中形成有包覆部及開口部的構造的示意圖。 ［第19圖］係本發明的第二實施樣貌之中使窗層兼支承基板的一部分露出的構造的示意圖。 ［第20圖］係本發明的第二實施樣貌的刻劃前的發光元件的示意圖。 ［第21圖］係表示關於實施例一的改變反射防止層的材質之物(實施例一之一至一之六)及比較例的發光的積分輸出功率的改善率的圖。 ［第22圖］係表示實施例一之一、實施例二及比較例的發光的積分輸出功率的改善率的圖。 ［第23圖］係表示本發明的反射防止層的折射率與全反射角的關係的圖。[Figure 1] is a schematic diagram of a light-emitting element wafer in which an anti-reflection layer and a first dielectric film are formed in the first embodiment of the present invention. [FIG. 2] It is a schematic diagram of the window layer and supporting substrate in which the dielectric film is formed in the first embodiment of the present invention. [Figure 3] is a schematic view of the bonded substrate formed in the first embodiment of the present invention. [Figure 4] is a schematic diagram of the structure of the first embodiment of the present invention with the starting substrate and the selective etching layer removed. [FIG. 5] It is a schematic diagram of a structure in which a removed portion is formed in the first embodiment of the present invention. [Figure 6] is a schematic diagram of a structure in which a third dielectric layer is formed and an opening is provided in the first embodiment of the present invention. [Figure 7] is a schematic diagram of a structure in which a first ohmic electrode and a second ohmic electrode are formed in the first embodiment of the present invention. [Figure 8] This is a schematic diagram of the structure in which the covering portion and the opening portion are formed in the first embodiment of the present invention. [FIG. 9] It is a schematic diagram of a structure in which a part of a window layer and a supporting substrate is exposed in the first embodiment of the present invention. [Figure 10] is a schematic view of a light-emitting element before scoring of the first embodiment of the present invention. [Figure 11] is a schematic diagram of a light-emitting device wafer in which an anti-reflection layer, a first dielectric film, and a first adhesive layer are formed in the second embodiment of the present invention. [Figure 12] is a schematic diagram of a window layer and a supporting substrate in which a dielectric film and a second adhesive layer are formed in the second embodiment of the present invention. [Figure 13] is a schematic view of a bonded substrate formed in the second embodiment of the present invention. [FIG. 14] It is a schematic diagram of the structure in which the starting substrate and the selective etching layer are removed in the second embodiment of the present invention. [Fig. 15] It is a schematic diagram of a structure in which a removed portion is formed in the second embodiment of the present invention. [Figure 16] is a schematic diagram of a structure in which a third dielectric layer is formed and an opening is provided in the second embodiment of the present invention. [Figure 17] is a schematic diagram of a structure in which a first ohmic electrode and a second ohmic electrode are formed in the second embodiment of the present invention. [FIG. 18] It is a schematic diagram of the structure in which the covering portion and the opening portion are formed in the second embodiment of the present invention. [FIG. 19] It is a schematic diagram of a structure in which a part of the window layer and the supporting substrate is exposed in the second embodiment of the present invention. [Figure 20] is a schematic view of a light-emitting element before scoring of a second embodiment of the present invention. [FIG. 21] is a graph showing the improvement rate of the integrated output power of light emission of the material of the first embodiment that changes the material of the anti-reflection layer (the first to the sixth of the first embodiment) and the comparative example. [Figure 22] is a graph showing the improvement rate of the integrated output power of light emission in the first example, the second example, and the comparative example. [FIG. 23] A diagram showing the relationship between the refractive index of the anti-reflection layer of the present invention and the total reflection angle.

103‧‧‧第一半導體層 103‧‧‧First semiconductor layer

104‧‧‧活性層 104‧‧‧active layer

105‧‧‧第二半導體層 105‧‧‧Second semiconductor layer

106‧‧‧中間組成層 106‧‧‧ Middle layer

107‧‧‧電流擴散層 107‧‧‧Current diffusion layer

108‧‧‧發光部 108‧‧‧Lighting Department

111‧‧‧反射防止層 111‧‧‧Reflection prevention layer

112‧‧‧第一介電質膜 112‧‧‧First dielectric film

120‧‧‧窗層兼支承基板 120‧‧‧Window layer and supporting substrate

122‧‧‧第二介電質膜 122‧‧‧Second dielectric film

132‧‧‧介電質膜 132‧‧‧Dielectric film

135‧‧‧非除去部 135‧‧‧non-removal department

136‧‧‧除去部 136‧‧‧Exclude Department

185‧‧‧第一歐姆電極 185‧‧‧The first ohmic electrode

186‧‧‧第二歐姆電極 186‧‧‧The second ohm electrode

193‧‧‧刻劃部 193‧‧‧Scribe Department

1000‧‧‧刻劃前的發光元件 1000‧‧‧Light-emitting element before scoring

Claims (8)

一種發光元件，係包括一窗層兼支承基板及一發光部，該發光部依序包含設置於該窗層兼支承基板上的第二導電型的一第二半導體層、一活性層、及第一導電型的一第一半導體層，該發光元件包含： 一除去部，係至少除去該第一半導體層及該活性層； 一非除去部，係為該除去部以外； 一第一歐姆電極，係設置於該非除去部；以及 一第二歐姆電極，係設置於該除去部， 其中該窗層兼支承基板與該發光部係透過一介電質膜而相接合， 該發光部與該介電質膜之間具有一反射防止層。A light-emitting element includes a window layer and supporting substrate and a light-emitting portion, the light-emitting portion sequentially includes a second conductivity type second semiconductor layer, an active layer, and a second conductive type disposed on the window layer and supporting substrate A first semiconductor layer of a conductive type, the light-emitting element includes: A removing part, at least removing the first semiconductor layer and the active layer; A non-removed part is outside the removed part; A first ohmic electrode disposed on the non-removed portion; and A second ohmic electrode is provided in the removed portion, Wherein the window layer and supporting substrate and the light emitting part are joined through a dielectric film, There is an anti-reflection layer between the light-emitting portion and the dielectric film. 如請求項1所述之發光元件，其中該介電質膜為SiO2 層，該反射防止層具有1.6以上2.9以下的折射率。The light-emitting element according to claim 1, wherein the dielectric film is a SiO 2 layer, and the anti-reflection layer has a refractive index of 1.6 or more and 2.9 or less. 如請求項1或2所述之發光元件，其中該介電質膜係包括設置於該發光部之側的一第一介電質膜及設置於該窗層兼支承基板之側的一第二介電質膜，該第一介電質膜及該第二介電質膜係直接接合。The light-emitting element according to claim 1 or 2, wherein the dielectric film includes a first dielectric film disposed on the side of the light-emitting portion and a second dielectric film disposed on the side of the window layer and supporting substrate The dielectric film, the first dielectric film and the second dielectric film are directly bonded. 如請求項1或2所述之發光元件，其中該介電質膜係包括設置於該發光部之側的一第一介電質膜及設置於該窗層兼支承基板之側的一第二介電質膜所成，該第一介電質膜及該第二介電質膜係透過黏接劑而接合。The light-emitting element according to claim 1 or 2, wherein the dielectric film includes a first dielectric film disposed on the side of the light-emitting portion and a second dielectric film disposed on the side of the window layer and supporting substrate The dielectric film is formed, and the first dielectric film and the second dielectric film are joined by an adhesive. 一種發光元件的製造方法，係製造發光元件，該發光元件的製造方法包含下列步驟： 準備起始基板； 於該起始基板上，藉由磊晶成長，形成一積層構造而製作一發光元件用晶圓，該積層構造係包括一發光部，該發光部係依序積層有第一導電型的一第一半導體層、一活性層、及一第二導電型的一第二半導體層； 於該發光元件用晶圓上，形成一第一介電質膜； 準備一窗層兼支承基板； 於該窗層兼支承基板上形成一第二介電質膜； 使該發光元件用晶圓與該窗層兼支承基板透過該第一介電質膜及該第二介電質膜而相接合，而製作一接合基板； 將該接合基板之中的該起始基板除去而使該第一半導體層露出； 形成一除去部及該除去部以外的一非除去部，該除去部係將該接合基板的一部分的區域之中的至少該第一半導體層及該活性層予以除去； 於該非除去部的表面形成一第一歐姆電極，於該除去部的表面形成一第二歐姆電極； 使用藉由雷射光的刻劃及劈裂法而自該接合基板分離出晶粒狀的發光元件， 其中於形成該第一介電質膜的步驟之前，於該發光元件用晶圓的該發光部之上形成一反射防止層。A method for manufacturing a light-emitting element is to manufacture a light-emitting element. The method for manufacturing a light-emitting element includes the following steps: Prepare the starting substrate; On the starting substrate, by epitaxial growth, a laminated structure is formed to produce a wafer for light-emitting elements. The laminated structure includes a light-emitting portion, and the light-emitting portion is sequentially laminated with a first conductivity type first A semiconductor layer, an active layer, and a second semiconductor layer of a second conductivity type; Forming a first dielectric film on the light-emitting device wafer; Prepare a window layer and supporting substrate; Forming a second dielectric film on the window layer and supporting substrate; Bonding the wafer for light-emitting element and the window layer and supporting substrate through the first dielectric film and the second dielectric film to produce a bonding substrate; Removing the starting substrate from the bonding substrate to expose the first semiconductor layer; Forming a removed portion and a non-removed portion other than the removed portion, the removed portion removing at least the first semiconductor layer and the active layer in a region of a part of the bonding substrate; Forming a first ohmic electrode on the surface of the non-removed portion, and forming a second ohmic electrode on the surface of the removed portion; Using a laser light scribing and cleaving method to separate the grain-shaped light-emitting element from the bonding substrate, Before the step of forming the first dielectric film, an anti-reflection layer is formed on the light-emitting portion of the light-emitting element wafer. 如請求項5所述之發光元件的製造方法，其中該第一介電質膜及該第二介電質膜為SiO2 層，該反射防止層具有1.6以上2.9以下的折射率。The method for manufacturing a light-emitting element according to claim 5, wherein the first dielectric film and the second dielectric film are SiO 2 layers, and the antireflection layer has a refractive index of 1.6 or more and 2.9 or less. 如請求項5或6所述之發光元件的製造方法，其中在製作該接合基板的步驟之中，使該第一介電質膜及該第二介電質膜直接接合，而將該窗層兼支承基板與該發光元件用晶圓相接合。The method for manufacturing a light-emitting element according to claim 5 or 6, wherein in the step of manufacturing the bonding substrate, the first dielectric film and the second dielectric film are directly bonded, and the window layer The supporting substrate and the light-emitting element wafer are joined together. 如請求項5或6所述之發光元件的製造方法，其中在製作該接合基板的步驟之中，藉由黏接劑使該第一介電質膜及該第二介電質膜接合，而將該窗層兼支承基板與該發光元件用晶圓相接合。The method for manufacturing a light-emitting element according to claim 5 or 6, wherein in the step of manufacturing the bonding substrate, the first dielectric film and the second dielectric film are bonded by an adhesive, and The window layer and supporting substrate are bonded to the light-emitting element wafer.
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