TW201941275A - Substrate processing device, semiconductor device production method and program - Google Patents
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
- Formation Of Insulating Films (AREA)
- Control Of High-Frequency Heating Circuits (AREA)
Abstract
Description
本發明是有關基板處理裝置，半導體裝置的製造方法及記錄媒體。The present invention relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a recording medium.
作為半導體裝置(半導體裝置)的製造工程之一工程，例如有利用加熱裝置來加熱處理室內的基板，使被成膜於基板的表面的薄膜中的組成或結晶構造變化，或修復被成膜的薄膜內的結晶缺陷等的退火處理為代表的改質處理。在近年來的半導體裝置中，微細化、高集成化顯著，隨之，被要求對形成具有高的寬高比的圖案之高密度的基板進行改質處理。作為對如此的高密度基板進行的改質處理方法，有利用微波的熱處理方法被檢討。
先前技術文獻
專利文獻As one of the manufacturing processes of a semiconductor device (semiconductor device), for example, there is a method of heating a substrate in a processing chamber with a heating device, changing the composition or crystal structure of a thin film formed on the surface of the substrate, or repairing the formed film. An annealing process such as a crystal defect in a thin film is a typical modification process. In recent years, semiconductor devices have been significantly miniaturized and highly integrated, and accordingly, high-density substrates having a pattern having a high aspect ratio are required to be modified. As a modification processing method for such a high-density substrate, a heat treatment method using microwaves has been reviewed.
Prior art literature patent literature
專利文獻1：日本特開2015-070045號公報Patent Document 1: Japanese Patent Application Laid-Open No. 2015-070045
(發明所欲解決的課題)(Problems to be solved by the invention)
就以往使用微波的熱處理而言，有時不能均一地加熱基板，無法對象膜的均一的處理。In the conventional heat treatment using a microwave, the substrate may not be uniformly heated, and it may not be possible to uniformly process the film.
本發明的目的是在於提供一種可進行均一的基板處理的技術。
(用以解決課題的手段)An object of the present invention is to provide a technology capable of performing uniform substrate processing.
(Means for solving problems)
若根據本發明之一形態，則提供一種具有下列構成之技術：
處理室，其係處理基板；
基板保持部，其係保持前述基板；
氣體導入部，其係將冷卻氣體導入至前述處理室內；
排氣部，其係將被供給至前述處理室內的前述冷卻氣體排氣；
複數的微波產生器，其係使微波產生；
溫度測定部，其係測定被保持於前述基板保持部的前述基板的中央部與邊緣部的溫度；及
控制部，其係構成為控制前述氣體導入部及前述複數的微波產生器，使得按照藉由前述溫度測定部所測定的前述基板的中央部及邊緣部的溫度，來調整從前述氣體導入部被導入的前述冷卻氣體的供給流量，且停止前述複數的微波產生器之中至少1個。
[發明的效果]According to one aspect of the present invention, a technology having the following constitution is provided:
Processing chamber for processing substrates;
A substrate holding portion which holds the substrate;
A gas introduction part for introducing cooling gas into the processing chamber;
An exhaust section for exhausting the cooling gas supplied into the processing chamber;
A plurality of microwave generators for generating microwaves;
The temperature measurement unit measures the temperature of the central portion and the edge portion of the substrate held by the substrate holding portion; and the control unit is configured to control the gas introduction portion and the plurality of microwave generators so that The supply flow rate of the cooling gas introduced from the gas introduction portion is adjusted by the temperatures of the central portion and the edge portion of the substrate measured by the temperature measurement portion, and at least one of the plurality of microwave generators is stopped.
[Effect of the invention]
若根據本發明，則可提供一種可進行均一的基板處理的技術。According to the present invention, a technique capable of performing uniform substrate processing can be provided.
以下，利用圖面說明有關本發明的實施形態。但，在以下的說明中，有對於同一構成要素附上同一符號省略重複說明的情形。另外，圖面為了更明確說明，而有相較於實際的形態，模式性地表示各部的寬度、厚度、形狀等的情況，但終究只是一例，不限本發明的解釋。Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, in the following description, the same components are denoted by the same reference numerals, and redundant descriptions may be omitted. In addition, in order to explain the figure more clearly, the width, thickness, shape, etc. of each part may be shown schematically in comparison with the actual form, but it is only an example and is not limited to the explanation of the present invention.
＜本發明之一實施形態＞
以下根據圖面說明有關本發明之一實施形態。<One embodiment of the present invention>
An embodiment of the present invention will be described below with reference to the drawings.
(1)基板處理裝置的構成
在本實施形態中，本發明的基板處理裝置100是構成為對晶圓實施各種的熱處理的單片式熱處理裝置。在本實施形態中，基板處理裝置100是作為進行後述利用的電磁波的退火處理(改質處理)的裝置進行說明。(1) Configuration of substrate processing apparatus In this embodiment, the substrate processing apparatus 100 of the present invention is a single-chip heat treatment apparatus configured to perform various heat treatments on a wafer. In the present embodiment, the substrate processing apparatus 100 will be described as an apparatus that performs an annealing process (modification process) of an electromagnetic wave used later.
(處理室)
如圖1所示般，本實施形態的基板處理裝置100是具有：
以金屬等的反射電磁波的材料所構成之作為腔室(上部容器)的處理箱102；及
被收容於處理箱102的內部，垂直方向的上下端部被開放的圓筒形狀的反應管103。
反應管103是以透過石英等的電磁波的材料所構成。並且，以金屬材料所構成的凸緣蓋(閉塞板)104會經由作為密封構件(封閉構件)的O型環220來與反應管103的上端抵接而閉塞反應管103的上端。主要藉由處理箱102與反應管103及凸緣蓋104來構成處理矽晶圓等的基板之處理容器，特別是以反應管103的內側空間作為處理室201構成。亦可不設反應管103，藉由處理箱102、凸緣蓋104來構成處理容器。該情況，處理箱102的內部空間成為處理室201。又，亦可不設凸緣蓋104，使用頂部閉塞的處理箱102，藉由處理箱102與反應管103、或處理箱102來構成處理容器。(Processing Room)
As shown in FIG. 1, the substrate processing apparatus 100 according to this embodiment includes:
A processing box 102 made of a material such as a metal that reflects electromagnetic waves as a chamber (upper container); and a cylindrical reaction tube 103 that is housed inside the processing box 102 and has open upper and lower ends in the vertical direction.
The reaction tube 103 is made of a material that transmits electromagnetic waves such as quartz. In addition, a flange cover (blocking plate) 104 made of a metal material is brought into contact with the upper end of the reaction tube 103 via an O-ring 220 as a sealing member (closure member) to close the upper end of the reaction tube 103. A processing container for processing a substrate such as a silicon wafer is mainly constituted by the processing box 102, the reaction tube 103, and the flange cover 104, and in particular, the space inside the reaction tube 103 is used as the processing chamber 201. The processing container 102 and the flange cover 104 may be configured without the reaction tube 103. In this case, the internal space of the processing box 102 becomes the processing chamber 201. In addition, instead of providing the flange cover 104, a processing tank 102 with a closed top may be used, and the processing tank 102 and the reaction tube 103 or the processing tank 102 may be used to constitute a processing container.
在反應管103的下方是設有載置台210，在載置台210的上面是載置作為保持基板的晶圓200的基板保持具(基板保持部)之晶舟217。在晶舟217中，處理對象的晶圓200、以夾入晶圓200的方式被載置於晶圓200的垂直方向上下的加熱板(susceptor)1011a、1011b、及以夾入加熱板1011a、1011b的方式被載置於垂直方向上下之作為隔熱板的石英板101a、101b會以預定的間隔被保持。亦即，加熱板101a、1011b是被載置於晶圓200的外側，石英板101a與石英板101b的內側。加熱板1011a、1011b是具有間接性地加熱晶圓200的機能的輻射板或均熱板，以矽板(Si板)或碳化矽板(SiC板)等之吸收電磁波而本身被加熱的介電質等的材質所形成。藉由如此構成，可更有效率地均一地加熱晶圓200。在本實施形態中，石英板101a、101b是相同的零件，以下，在無須特別地區別說明時，稱為石英板101進行說明。又，加熱板1011a、1011b是相同的零件，以下，在無須特別地區別說明時，稱為加熱板1011進行說明。Below the reaction tube 103 is a mounting table 210, and on the upper surface of the mounting table 210 is a wafer boat 217 on which a substrate holder (substrate holding section) on which a wafer 200 as a holding substrate is placed is placed. In the wafer boat 217, the wafer 200 to be processed is placed on the wafer 200 and sandwiched by heating plates 1011a and 1011b vertically above and below the wafer 200, and the heating plate 1011a, The quartz plates 101a and 101b which are placed on the upper and lower sides of the vertical direction as a heat insulation plate in the method of 1011b are held at predetermined intervals. That is, the heating plates 101a and 1011b are placed on the outside of the wafer 200, and the inside of the quartz plate 101a and the inside of the quartz plate 101b. The heating plates 1011a and 1011b are radiating plates or soaking plates having a function of indirectly heating the wafer 200. The silicon plates (Si plates) or silicon carbide plates (SiC plates) etc. absorb the electromagnetic waves and are heated by themselves. Made of high quality materials. With this configuration, the wafer 200 can be heated more uniformly and efficiently. In this embodiment, the quartz plates 101a and 101b are the same components. Hereinafter, when there is no need to distinguish between them, they are referred to as the quartz plate 101 for explanation. In addition, the heating plates 1011a and 1011b are the same components. Hereinafter, when there is no need to distinguish between them, they will be referred to as heating plates 1011 for explanation.
在載置台210的側壁，朝向載置台210的徑方向而突出之未圖示的突出部被設在載置台210的底面側。藉由此突出部與被設於後述的處理室201與搬送空間203之間的間隔板204接近或接觸，使抑制處理室201內的氣氛朝搬送空間203內移動，或搬送空間203內的氣氛朝處理室201內移動。On the side wall of the mounting table 210, a projection (not shown) protruding toward the radial direction of the mounting table 210 is provided on the bottom surface side of the mounting table 210. As the protruding portion approaches or comes into contact with the partition plate 204 provided between the processing chamber 201 and the transfer space 203 described later, the atmosphere in the processing chamber 201 is suppressed from moving toward the transfer space 203 or the atmosphere in the transfer space 203. Moves into the processing chamber 201.
作為上部容器的處理箱102是例如橫剖面為圓形，構成為平整的密閉容器。並且，作為下部容器的搬送容器202是例如藉由鋁(Al)或不鏽鋼(SUS)等的金屬材料或石英等所構成。在處理容器的下方是形成有搬送矽晶圓等的晶圓200的搬送區域203。另外，有將被處理箱102包圍的空間或被反應管103包圍的空間，比間隔板204更上方的空間稱為作為處理空間的處理室201或反應區域201，且將被搬送容器202包圍的空間，比間隔板更下方的空間稱為作為搬送空間的搬送區域203的情況。另外、處理室201與搬送區域203是不限於如本實施形態般使鄰接於垂直方向而構成，亦可使鄰接於水平方向而構成，或不設搬送區域203，只具有處理室201的構成。The processing tank 102 as an upper container is, for example, a closed container having a circular cross section and being flat. The transport container 202 as the lower container is made of a metal material such as aluminum (Al), stainless steel (SUS), or quartz. Below the processing container is a transfer area 203 in which a wafer 200 such as a silicon wafer is transferred. In addition, there is a space surrounded by the processing box 102 or a space surrounded by the reaction tube 103, and a space above the partition plate 204 is referred to as a processing chamber 201 or a reaction area 201 as a processing space, and is surrounded by the transfer container 202 The space, the space below the partition plate is referred to as the case of the transfer area 203 as the transfer space. In addition, the processing chamber 201 and the transfer area 203 are not limited to being configured to be adjacent to the vertical direction as in this embodiment, and may be configured to be adjacent to the horizontal direction, or the configuration is only provided with the processing chamber 201 without the transfer area 203.
在搬送容器202的側面是設有與閘閥205的基板搬入搬出口206，晶圓200是經由基板搬入搬出口206來移動於與未圖示的基板搬送室之間。On the side of the transfer container 202 is a substrate carry-in / out port 206 provided with a gate valve 205. The wafer 200 is moved between the substrate carry-in / out port 206 and a substrate transfer chamber (not shown).
在處理箱102的側面是設置有作為後面詳述的加熱裝置的電磁波供給部，從電磁波供給部供給的微波等的電磁波會被導入至處理室201而加熱晶圓200等，處理晶圓200。On the side of the processing box 102, an electromagnetic wave supply unit as a heating device described in detail later is provided, and electromagnetic waves such as microwaves supplied from the electromagnetic wave supply unit are introduced into the processing chamber 201 to heat the wafer 200 and the like to process the wafer 200.
載置台210是藉由作為旋轉軸的軸255所支撐。軸255是貫通搬送容器202的底部，更連接至在搬送容器202的外部進行旋轉、昇降動作的驅動機構267。使驅動機構267作動，而使軸255及載置台210旋轉、昇降，藉此可使被載置於晶舟217上的晶圓200旋轉或昇降。另外，軸255下端部的周圍是藉由波紋管212來包覆，處理室201及搬送區域203內是被保持於氣密。The mounting table 210 is supported by a shaft 255 as a rotation axis. The shaft 255 penetrates the bottom of the transport container 202 and is further connected to a drive mechanism 267 that performs rotation and elevation operations outside the transport container 202. The driving mechanism 267 is operated to rotate and raise and lower the shaft 255 and the mounting table 210, so that the wafer 200 placed on the wafer boat 217 can be rotated or raised and lowered. In addition, the periphery of the lower end portion of the shaft 255 is covered with a bellows 212, and the processing chamber 201 and the transfer area 203 are kept airtight.
載置台210是在晶圓200的搬送時，以載置台上面成為基板搬入搬出口206的位置(晶圓搬送位置)之方式下降，在晶圓200的處理時是以在圖1所示般，晶圓200會上昇至處理室201內的處理位置(晶圓處理位置)。另外，如上述般，使處理室201與搬送區域203鄰接於水平方向而構成，或不設搬送區域203，只具有處理室201的構成時，亦可不設使載置台昇降的機構，只設使載置台旋轉的機構。The mounting table 210 is lowered so that the upper surface of the mounting table becomes the position of the substrate loading / unloading port 206 (wafer transfer position) during the transfer of the wafer 200, and is shown in FIG. 1 during the processing of the wafer 200. The wafer 200 is raised to a processing position (wafer processing position) in the processing chamber 201. In addition, as described above, the processing chamber 201 and the transfer area 203 are configured to be adjacent to each other in the horizontal direction, or if the transfer area 203 is not provided and only has the configuration of the processing chamber 201, a mechanism for raising and lowering the mounting table may be omitted, and only the Mechanism for rotating the mounting table.
(排氣部)
在處理室201的下方，載置台210的外周側，是設有將處理室201的氣氛排氣的排氣部。如圖1所示般，在排氣部設有排氣口221。在排氣口221連接排氣管231，在排氣管231依序串聯按照處理室201內的壓力來控制閥開度之APC閥等的壓力調整器244、真空泵246。(Exhaust section)
Below the processing chamber 201, an outer peripheral side of the mounting table 210 is provided with an exhaust unit that exhausts the atmosphere of the processing chamber 201. As shown in FIG. 1, an exhaust port 221 is provided in the exhaust portion. An exhaust pipe 231 is connected to the exhaust port 221, and a pressure regulator 244 and a vacuum pump 246 such as an APC valve that controls the valve opening degree according to the pressure in the processing chamber 201 are connected in series in this order to the exhaust pipe 231.
在此，壓力調整器244只要是可接收處理室201內的壓力資訊(來自後述的壓力感測器245的反餽訊號)來調整排氣量者，不限於APC閥，亦可構成為併用通常的開閉閥與壓力調整閥。Here, as long as the pressure regulator 244 can receive the pressure information in the processing chamber 201 (a feedback signal from the pressure sensor 245 described later) to adjust the displacement, the pressure regulator 244 is not limited to the APC valve, and may be configured to use a normal On-off valve and pressure regulating valve.
主要藉由排氣管231、壓力調整器244來構成排氣部(亦稱為排氣系或排氣管線)。另外，亦可構成為以包圍載置台210的方式設置排氣口，可從晶圓200的全周將氣體排氣。又，亦可在排氣部的構成加上真空泵246。An exhaust section (also referred to as an exhaust system or an exhaust line) is mainly constituted by an exhaust pipe 231 and a pressure regulator 244. In addition, an exhaust port may be provided so as to surround the mounting table 210, and the gas may be exhausted from the entire periphery of the wafer 200. A vacuum pump 246 may be added to the configuration of the exhaust portion.
(氣體供給部)
在被設於處理室201的上部的凸緣蓋104是設有氣體導入口(氣體導入部)222，在氣體導入口222連接用以將惰性氣體、原料氣體、反應氣體等的各種基板處理用的處理氣體供給至處理室201內的氣體供給管232。在氣體供給管232從上游依序設有流量控制器(流量控制部)的質量流控制器(MFC)241及開閉閥的閥243。在氣體供給管232的上游側連接例如惰性氣體的氮(N2
)氣體源，氮(N2
)氣體會經由MFC241、閥243來從氣體導入口222供給至處理室201內。(Gas Supply Department)
The flange cover 104 provided in the upper part of the processing chamber 201 is provided with a gas introduction port (gas introduction part) 222, and various gas processing ports for inert gas, raw material gas, reaction gas, and the like are connected to the gas introduction port 222. The processing gas is supplied to a gas supply pipe 232 in the processing chamber 201. A mass flow controller (MFC) 241 of a flow controller (flow control unit) and a valve 243 of an on-off valve are sequentially provided in the gas supply pipe 232 from upstream. A nitrogen (N 2 ) gas source such as an inert gas is connected to the upstream side of the gas supply pipe 232. The nitrogen (N 2 ) gas is supplied from the gas introduction port 222 into the processing chamber 201 through the MFC 241 and the valve 243.
在本實施形態中，氣體導入口222是可藉由冷卻氣體(例如N2 氣體)來冷卻晶圓200的邊緣部，因此被設在凸緣蓋104之對應於晶圓200的邊緣部的上部之處。藉此，從氣體導入口222往反應室201內供給之作為冷卻氣體的N2 氣體會流至晶圓200的邊緣部的附近，可將晶圓200的邊緣部的溫度冷卻至所望的溫度。流至晶圓200的邊緣部的附近的N2 氣體是從排氣口221排出。另外，所謂晶圓200的邊緣部是意思晶圓200的外周部或周緣部的部分。In this embodiment, the gas introduction port 222 can cool the edge portion of the wafer 200 by a cooling gas (for example, N 2 gas). Therefore, the gas introduction port 222 is provided at the upper portion of the flange cover 104 corresponding to the edge portion of the wafer 200. Place. Accordingly, the N 2 gas supplied as a cooling gas from the gas introduction port 222 into the reaction chamber 201 flows near the edge portion of the wafer 200, and the temperature of the edge portion of the wafer 200 can be cooled to a desired temperature. The N 2 gas flowing near the edge portion of the wafer 200 is exhausted from the exhaust port 221. In addition, the edge portion of the wafer 200 means an outer peripheral portion or a peripheral edge portion of the wafer 200.
在基板處理時使用複數種類的氣體時，可藉由使用連接氣體供給管的構成來供給複數種類的氣體，該氣體供給管是在比氣體供給管232的閥243更下游側，從上游方向依序設有流量控制器的MFC及開閉閥的閥。亦可按每個氣體種類設置設有MFC、閥的氣體供給管。When a plurality of types of gases are used in the substrate processing, a plurality of types of gases can be supplied by using a configuration in which a gas supply pipe is connected. The gas supply pipe is further downstream than the valve 243 of the gas supply pipe 232, and depends on the upstream direction. The MFC with flow controller and the valve of the on-off valve are sequenced. A gas supply pipe provided with an MFC and a valve may be provided for each gas type.
主要藉由氣體供給管232、MFC241、閥243、氣體導入口222來構成氣體供給系(氣體供給部)。在將惰性氣體流動至氣體供給系時是亦稱為惰性氣體供給系。作為惰性氣體是除了N2 氣體以外，例如可使用Ar氣體、He氣體、Ne氣體、Xe氣體等的稀有氣體。A gas supply system (gas supply unit) is mainly constituted by a gas supply pipe 232, an MFC 241, a valve 243, and a gas introduction port 222. When an inert gas is flowed into the gas supply system, it is also called an inert gas supply system. As the inert gas, a rare gas such as an Ar gas, a He gas, a Ne gas, or a Xe gas can be used in addition to the N 2 gas.
在本實施形態中顯示設置1個氣體供給部的構成例，但不限於此。氣體供給部是只要設置1個以上即可，亦可設置複數個。在此情況中也是氣體導入口被設在凸緣蓋104之對應於晶圓200的邊緣部的上部之處。並且，在本實施形態中顯示將氣體導入口222設置於處理室201的上部的凸緣蓋104的構成例，但不限於此。氣體導入口222是亦可設在處理室201的側壁(反應管103的側壁)。The present embodiment shows a configuration example in which one gas supply unit is provided, but it is not limited to this. It is only necessary to provide one or more gas supply units, and a plurality of gas supply units may also be provided. Also in this case, the gas introduction port is provided at the upper portion of the flange cover 104 corresponding to the edge portion of the wafer 200. Further, in this embodiment, a configuration example of the flange cover 104 in which the gas introduction port 222 is provided on the upper portion of the processing chamber 201 is shown, but it is not limited to this. The gas introduction port 222 may be provided on the side wall (side wall of the reaction tube 103) of the processing chamber 201.
(溫度感測器)
在凸緣蓋104是設置有溫度感測器263a、263b作為非接觸式的溫度測定裝置(溫度測定部)。根據藉由溫度感測器263a、263b所檢測出的溫度資訊來調整後述的微波產生器655的輸出，藉此加熱基板，基板溫度成為所望的溫度分佈。溫度感測器263a、263b是例如以IR(Infrared Radiation)感測器等的放射溫度計所構成。(Temperature sensor)
The flange cover 104 is provided with temperature sensors 263a and 263b as a non-contact temperature measurement device (temperature measurement unit). The output of the microwave generator 655 described later is adjusted based on the temperature information detected by the temperature sensors 263a and 263b, thereby heating the substrate, and the substrate temperature becomes a desired temperature distribution. The temperature sensors 263a and 263b are constituted by radiation thermometers such as IR (Infrared Radiation) sensors.
溫度感測器263a是被配置為測定隔熱板的石英板101a的中央部的表面溫度、晶圓200的中央部的表面溫度、或加熱板1011a的中央部的表面溫度。溫度感測器263b是被配置為測定加熱板1011a的邊緣部的表面溫度。所謂加熱板1011a的邊緣部是意思加熱板1011a的外周部或周緣部的部分。The temperature sensor 263a is arranged to measure the surface temperature of the central portion of the quartz plate 101a of the heat insulating plate, the surface temperature of the central portion of the wafer 200, or the surface temperature of the central portion of the heating plate 1011a. The temperature sensor 263b is configured to measure a surface temperature of an edge portion of the heating plate 1011a. The edge portion of the heating plate 1011a means a portion of an outer peripheral portion or a peripheral portion of the heating plate 1011a.
構成為藉由溫度感測器263a、263b來測定作為發熱體的加熱板1011a的中央部與邊緣部的表面溫度。此情況，以溫度感測器263a、263b所檢測的波長是利用透過隔熱板的石英板101a的波長，理想是1.5μm的波長為佳。加熱板1011a的面內溫度是可想像與晶圓200的面內溫度大致同等，因此藉由溫度感測器263a、263b來測定加熱板1011a的中央部的表面溫度與邊緣部的表面溫度，可推定晶圓200的中央部的表面溫度與邊緣部的表面溫度。根據被推測的晶圓200的中央部的表面溫度與邊緣部的表面溫度，進行微波產生器655的輸出，亦即加熱裝置的控制、MFC241的流量調整的控制、閥243的開閉的控制。The temperature sensors 263a and 263b are used to measure the surface temperature of the central portion and the edge portion of the heating plate 1011a as a heating element. In this case, the wavelength detected by the temperature sensors 263a and 263b is a wavelength using a quartz plate 101a which passes through a heat insulating plate, and a wavelength of 1.5 μm is preferable. It is conceivable that the in-plane temperature of the heating plate 1011a is approximately the same as the in-plane temperature of the wafer 200. Therefore, the temperature of the central portion of the heating plate 1011a and the surface temperature of the edge portion are measured by the temperature sensors 263a and 263b. The surface temperature of the center part and the surface temperature of the edge part of the wafer 200 are estimated. The output of the microwave generator 655, that is, the control of the heating device, the control of the flow rate adjustment of the MFC 241, and the control of the opening and closing of the valve 243 are performed based on the estimated surface temperature of the central portion and the surface temperature of the edge portion of the wafer 200.
另外，在本發明中記載成晶圓200的溫度(晶圓溫度)時，為指依據後述的溫度變換資料而被變換的晶圓溫度，亦即意思被推測的晶圓溫度時，及意思藉由溫度感測器263a來直接測定晶圓200的溫度而取得的溫度時，以及意思該等的雙方時，進行說明。溫度感測器263a、263b是在無須特別地區別說明時，作為溫度感測器263說明。In addition, when the temperature (wafer temperature) of the wafer 200 is described in the present invention, it means a wafer temperature converted according to temperature conversion data described later, that is, a wafer temperature that is supposed to be estimated, and a borrowed meaning. The temperature obtained by directly measuring the temperature of the wafer 200 by the temperature sensor 263a, and the case where both mean both, will be described. The temperature sensors 263a and 263b are described as the temperature sensors 263 when there is no need to distinguish between them.
又，利用溫度感測器263b來測定石英板101a、晶圓200的邊緣部的表面溫度時，亦如上述般，利用溫度感測器263b來測定石英板101a的邊緣部的溫度，在測定晶圓200的邊緣部的溫度時，亦於石英板101a設置測定孔(未圖示)及於加熱板1011a的邊緣部設置測定孔(未圖示)，藉由溫度感測器263b來測定晶圓的邊緣部的表面溫度。When the surface temperature of the edge portion of the quartz plate 101a and the wafer 200 is measured by the temperature sensor 263b, the temperature of the edge portion of the quartz plate 101a is measured by the temperature sensor 263b as described above. At the temperature of the edge of the circle 200, a measurement hole (not shown) is also provided in the quartz plate 101a and a measurement hole (not shown) is provided in the edge of the heating plate 1011a, and the wafer is measured by the temperature sensor 263b. The surface temperature of the edge portion.
如圖2所示般，利用溫度感測器263a、263b來測定加熱板1011a的中央部的表面溫度及邊緣部的表面溫度。如先前所述般，以溫度感測器263a、263b所檢測出的波長作為透過石英板101a的波長(例如1.5μm)，測定各者的表面溫度。在本實施形態中，加熱板1011a的中央部的表面溫度及邊緣部的表面溫度的溫度測定是在後述的基板處理工程(改質工程)中被利用。需要測定石英板101a的中央部的表面溫度及邊緣部的表面溫度時，亦可以溫度感測器263a、263b所檢測出的波長作為不透過石英板101a的波長，測定各者的表面溫度。As shown in FIG. 2, the surface temperature of the center part and the surface temperature of the edge part of the heating plate 1011a were measured using the temperature sensors 263a and 263b. As described above, the wavelengths detected by the temperature sensors 263a and 263b are used as the wavelength (for example, 1.5 μm) transmitted through the quartz plate 101a, and the surface temperature of each is measured. In the present embodiment, the temperature measurement of the surface temperature of the central portion and the surface temperature of the edge portion of the heating plate 1011a is used in a substrate processing process (modification process) described later. When it is necessary to measure the surface temperature of the central portion and the surface temperature of the edge portion of the quartz plate 101a, the wavelengths detected by the temperature sensors 263a and 263b may be measured as the wavelengths that do not pass through the quartz plate 101a, and the surface temperature of each may be measured.
另外，作為測定晶圓200的溫度之手段，不限於上述的放射溫度計，亦可利用熱成像(thermography)或熱電偶來進行溫度測定，或亦可併用熱成像、熱電偶與非接觸式溫度計來進行溫度測定。但，利用熱電偶來進行溫度測定時，需要將熱電偶配置於晶圓200的附近來進行溫度測定。亦即，因為需要在處理室201內配置熱電偶，所以熱電偶本身會藉由從後述的微波產生器所供給的微波而被加熱，因此無法正確地測溫。因此，使用非接觸式溫度計作為溫度感測器263使用為理想。In addition, as a method for measuring the temperature of the wafer 200, the temperature is not limited to the above-mentioned radiation thermometer, and thermography or a thermocouple may be used for temperature measurement, or thermography, a thermocouple, and a non-contact thermometer may be used in combination. Perform temperature measurement. However, when using a thermocouple for temperature measurement, it is necessary to arrange the thermocouple near the wafer 200 to perform temperature measurement. That is, since a thermocouple needs to be arranged in the processing chamber 201, the thermocouple itself is heated by the microwave supplied from a microwave generator described later, and therefore the temperature cannot be accurately measured. Therefore, it is desirable to use a non-contact thermometer as the temperature sensor 263.
又，溫度感測器263是不限於設在凸緣蓋104，亦可設在載置台210。又，溫度感測器263是不僅直接設置於凸緣蓋104或載置台210，亦可構成為使來自被設在凸緣蓋104或載置台210的測定窗的放射光反射於鏡等而間接地測定。而且，溫度感測器263a、263b是不限於設置2個，亦可設置複數個。The temperature sensor 263 is not limited to the flange cover 104 and may be provided on the mounting base 210. In addition, the temperature sensor 263 is not only provided directly on the flange cover 104 or the mounting table 210, but also may be configured to reflect the radiated light from a measurement window provided on the flange cover 104 or the mounting table 210 to a mirror or the like and indirectly. To determine. The temperature sensors 263a and 263b are not limited to two, and a plurality of temperature sensors may be provided.
(電磁波供給部)
圖3是為了避免圖面的複雜度，而省略微波產生器655的圖示。(Electromagnetic wave supply section)
FIG. 3 is an illustration of the microwave generator 655 to avoid complexity of the drawing.
其次，利用圖1及圖3來說明電磁波供給部的構成。在本實施形態中，如圖3所示般，例示具有6個電磁波供給部的構造進行說明。另外，在圖1中，基於方便起見，例示性地顯示可從側面確認的電磁波導入埠653-1、653-4、導波管654-1、654-4、微波產生器655-1、655-4。電磁波導入埠是亦可視為電磁波導入口。Next, the configuration of the electromagnetic wave supply unit will be described with reference to FIGS. 1 and 3. In this embodiment, as shown in FIG. 3, the structure which has six electromagnetic wave supply parts is illustrated and demonstrated. In addition, in FIG. 1, for convenience, the electromagnetic wave introduction ports 653-1, 653-4, the waveguides 654-1, 654-4, the microwave generator 655-1, and 655-4. The electromagnetic wave introduction port can also be regarded as an electromagnetic waveguide entrance.
如圖3所示般，在處理箱102的1個的側壁是設置有6個的電磁波導入埠(第1導入埠653-1、第2導入埠653-2、第3導入埠653-3、第4導入埠653-4、第5導入埠653-5、第6導入埠653-6)。在第1導入埠653-1~第6導入埠653-6的各者連接用以將電磁波供給至處理室201內的6個的導波管(第1導波管654-1、第2導波管654-2、第3導波管654-3、第4導波管654-4、第5導波管654-5、第6導波管654-6)的各者的一端。在第1導波管654-1~第6導波管654-6的各者的另一端連接用以將電磁波供給至處理室201內而加熱之作為加熱源的6個的微波產生器(第1微波產生器655-1、第2微波產生器655-2、第3微波產生器655-3、第4微波產生器655-4、第5微波產生器655-5、第6微波產生器655-6)。亦可將微波產生器稱為電磁波源(微波源)。另外，在圖4、圖5雖未被圖示，但如前述般，在第4導波管654-4、第5導波管654-5的各者的另一端連接第4微波產生器655-4、第5微波產生器655-5。As shown in FIG. 3, one side wall of the processing box 102 is provided with six electromagnetic wave introduction ports (first introduction port 653-1, second introduction port 653-2, third introduction port 653-3, 4th introduction port 653-4, 5th introduction port 653-5, 6th introduction port 653-6). Each of the first introduction port 653-1 to the sixth introduction port 653-6 is connected to six waveguides (first waveguide 654-1, second waveguide) for supplying electromagnetic waves to the processing chamber 201. One end of each of the wave tube 654-2, the third waveguide 654-3, the fourth waveguide 654-4, the fifth waveguide 654-5, and the sixth waveguide 654-6). Six microwave generators (No. 6) for supplying electromagnetic waves into the processing chamber 201 and heating them are connected to the other ends of each of the first waveguide 654-1 to the sixth waveguide 654-6. 1 microwave generator 655-1, 2nd microwave generator 655-2, 3rd microwave generator 655-3, 4th microwave generator 655-4, 5th microwave generator 655-5, 6th microwave generator 655 -6). The microwave generator may also be referred to as an electromagnetic wave source (microwave source). Although not shown in FIGS. 4 and 5, as described above, a fourth microwave generator 655 is connected to the other end of each of the fourth waveguide 654-4 and the fifth waveguide 654-5. -4. The fifth microwave generator 655-5.
如圖3、圖4、圖5所示般，晶圓200是在此例中，處理箱102的大致中央部分，亦即在圖4的側面圖中，被配置於電磁波導入埠653-3與653-6之間的高度位置，並且，在圖5的上視圖中，被配置於處理箱102的大致中央部分。藉此，從6個的電磁波導入埠供給的微波是可幾乎均等地照射於晶圓200的上面及下面或全體。As shown in FIG. 3, FIG. 4, and FIG. 5, the wafer 200 is, in this example, the substantially central portion of the processing box 102, that is, the side view of FIG. 4, and is disposed in the electromagnetic wave introduction port 653-3 and The height position between 653-6 is, in the upper view of FIG. 5, disposed at the substantially central portion of the processing box 102. As a result, the microwaves supplied from the six electromagnetic wave introduction ports can be irradiated on the upper and lower surfaces of the wafer 200 or the entire body almost uniformly.
另外，在圖3是顯示設了6個的電磁波導入埠的電磁波供給部之一例，但電磁波導入埠是亦可設為4個。此情況，例如，去掉電磁波導入埠653-2、653-5及其關聯的導波管654-2、654-5，微波產生器655-2、655-5。電磁波供給部是藉由4個的電磁波導入埠654-1、654-3、654-4、654-6，4個的導波管654-1、654-3、654-4、654-6，4個的微波產生器655-1、655-3、655-4、655-6所構成。藉由如此構成，使4個的電磁波導入埠654-1、654-3、654-4、654-6相對於處理箱102內或處理室201內的晶圓200的距離大致形成均等，藉此可使來自各電磁波導入埠的微波大致均等地作用於晶圓200。In addition, although FIG. 3 shows an example of an electromagnetic wave supply unit provided with six electromagnetic wave introduction ports, four electromagnetic wave introduction ports may be provided. In this case, for example, the electromagnetic wave introduction ports 653-2 and 653-5 and the associated waveguides 654-2 and 654-5 and the microwave generators 655-2 and 655-5 are removed. The electromagnetic wave supply unit uses four electromagnetic wave introduction ports 654-1, 654-3, 654-4, 654-6, four waveguides 654-1, 654-3, 654-4, 654-6, Four microwave generators 655-1, 655-3, 655-4, and 655-6. With this configuration, the distances of the four electromagnetic wave introduction ports 654-1, 654-3, 654-4, and 654-6 from the wafer 200 in the processing box 102 or the processing chamber 201 are made substantially equal, thereby The microwaves from the electromagnetic wave introduction ports can be applied to the wafer 200 approximately uniformly.
各微波產生器655-1~655-6是將微波等的電磁波分別供給至各導波管654-1~654-6，經由各導波管654-1~654-6從各導入埠653-1~653-6往處理室201內供給電磁波。並且，在各微波產生器655-1~655-6可使用磁控管或調速管等。以後，電磁波導入埠653-1~653-6、導波管654-1~654-6、微波產生器655-1~655-6是在無須特別各區別說明時，記載成電磁波導入埠653、導波管654、微波產生器655進行說明。Each of the microwave generators 655-1 to 655-6 supplies electromagnetic waves such as microwaves to the respective waveguides 654-1 to 654-6, and passes from the respective introduction ports 653- through the respective waveguides 654-1 to 654-6. 1 to 653-6 supplies electromagnetic waves into the processing chamber 201. In addition, for each of the microwave generators 655-1 to 655-6, a magnetron or a klystron can be used. In the future, electromagnetic wave introduction ports 653-1 to 653-6, waveguides 654-1 to 654-6, and microwave generators 655-1 to 655-6 are described as electromagnetic wave introduction ports 653, 650, 655, 655, 655, and 655-6. The waveguide 654 and the microwave generator 655 will be described.
藉由微波產生器655所產生的電磁波的頻率是理想被控制成為13.56MHz以上，24.125GHz以下的頻率範圍。更合適控制成為2.45GHz或5.8GHz的頻率為理想。在此，微波產生器655-1~655-6的各者的頻率是亦可設為相同的頻率，或亦可以不同的頻率設置。The frequency of the electromagnetic wave generated by the microwave generator 655 is ideally controlled to a frequency range above 13.56 MHz and below 24.125 GHz. It is more desirable to control the frequency to be 2.45 GHz or 5.8 GHz. Here, the frequencies of each of the microwave generators 655-1 to 655-6 may be set to the same frequency, or may be set to different frequencies.
並且，在本實施形態中，微波產生器655是被記載為在處理箱102的側面配置6個，但不限於此。而且，微波產生器655是設在處理箱102的1側面，但亦可配置為設在處理箱102的對向的側面等的不同的側面。In the present embodiment, the microwave generators 655 are described as having six microwave generators arranged on the side of the processing box 102, but the microwave generators 655 are not limited to this. In addition, the microwave generator 655 is provided on one side of the processing box 102, but may be disposed on a different side such as an opposite side of the processing box 102.
主要藉由微波產生器655-1~655-6、導波管654-1~654-6及電磁波導入埠653-1~653-6來構成作為加熱裝置的電磁波供給部(亦稱為電磁波供給裝置、微波供給部、微波供給裝置)。The microwave generator 655-1 to 655-6, the waveguides 654-1 to 654-6, and the electromagnetic wave introduction ports 653-1 to 653-6 are mainly used to form an electromagnetic wave supply unit (also referred to as an electromagnetic wave supply) as a heating device. Device, microwave supply unit, microwave supply device).
在微波產生器655-1~655-6的各者連接後述的控制器121。控制器121是連接測定被收容於處理室201內的石英板101a或101b或晶圓200的溫度之溫度感測器263。溫度感測器263是藉由上述的方法來測定石英板101或晶圓200的溫度而傳送至控制器121，藉由控制器121來控制微波產生器655-1~655-6的輸出，控制晶圓200的加熱。另外，作為藉由加熱裝置的加熱控制的方法，可使用藉由控制輸入至微波產生器655的電壓來控制晶圓200的加熱之方法、及藉由變更微波產生器655的電源為開啟(ON)的時間與關閉(OFF)的時間的比率來控制晶圓200的加熱之方法等。A controller 121 described later is connected to each of the microwave generators 655-1 to 655-6. The controller 121 is a temperature sensor 263 connected to measure the temperature of the quartz plate 101 a or 101 b or the wafer 200 stored in the processing chamber 201. The temperature sensor 263 measures the temperature of the quartz plate 101 or the wafer 200 by the method described above and transmits it to the controller 121. The controller 121 controls the output of the microwave generator 655-1 to 655-6, and controls Heating of the wafer 200. In addition, as a method of heating control by a heating device, a method of controlling heating of the wafer 200 by controlling a voltage input to the microwave generator 655, and changing the power of the microwave generator 655 to ON (ON A method of controlling the heating of the wafer 200 by a ratio of the time of) to the time of OFF.
在此，微波產生器655-1~655-6是藉由從控制器121傳送的相同的控制訊號來控制。但，不限於此，亦可構成為從控制器121傳送個別的控制訊號至微波產生器655-1~655-6各者，藉此個別地控制微波產生器655-1~655-6。Here, the microwave generators 655-1 to 655-6 are controlled by the same control signal transmitted from the controller 121. However, it is not limited to this, and it may be configured to transmit individual control signals from the controller 121 to each of the microwave generators 655-1 to 655-6, thereby individually controlling the microwave generators 655-1 to 655-6.
(控制裝置)
如圖6所示般，控制部(控制裝置、控制手段)的控制器121是構成為具備CPU(Central Processing Unit)121a、RAM(Random Access Memory)121b、記憶裝置121c、I/O埠121d的電腦。RAM121b、記憶裝置121c、I/O埠121d是被構成為可經由內部匯流排121e來與CPU121a交換資料。在控制器121連接例如作為觸控板等被構成的輸出入裝置122。(Control device)
As shown in FIG. 6, the controller 121 of the control unit (control device, control means) is configured to include a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a memory device 121c, and an I / O port 121d. computer. The RAM 121b, the memory device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122 configured as, for example, a touch panel is connected to the controller 121.
記憶裝置121c是例如以快閃記憶體、HDD (Hard Disk Drive)等所構成。在記憶裝置121c內是可讀出地儲存有控制基板處理裝置的動作的控制程式，或記載退火(改質)處理的程序或條件等的製程處方。製程處方是被組合為使後述的基板處理工程的各程序實行於控制器121，可取得預定的結果者，作為程式機能。以下，亦將此製程處方或控制程式等總簡稱為程式。又，亦將製程處方簡稱為處方。在本說明書中使用所謂程式的言辭時，有只包含處方單體時，只包含控制程式單體時，或者包含該等的雙方時。RAM121b是構成為暫時性地保持藉由CPU121a所讀出的程式或資料等之記憶區域(工作區域)。The memory device 121c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the memory device 121c, a control program for controlling the operation of the substrate processing device, or a process recipe describing a procedure or a condition for annealing (modification) processing are readablely stored. The process recipe is combined so that each program of a substrate processing process described later is executed in the controller 121, and a predetermined result can be obtained as a program function. Hereinafter, this process prescription or control program is also referred to simply as a program. In addition, the process recipe is also simply referred to as a prescription. In the present specification, the term "program" is used to include only a single prescription unit, only a single control unit, or both. The RAM 121b is a memory area (working area) configured to temporarily hold programs, data, and the like read by the CPU 121a.
I/O埠121d是被連接至上述的MFC241、閥243、壓力感測器245、APC閥244、真空泵246、溫度感測器263、驅動機構267、微波產生器655等。The I / O port 121d is connected to the aforementioned MFC 241, valve 243, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, driving mechanism 267, microwave generator 655, and the like.
CPU121a是被構成為從記憶裝置121c讀出控制程式而實行，且按照來自輸出入裝置122的操作指令的輸入等來從記憶裝置121c讀出處方。CPU121a是被構成為以按照讀出的處方的內容之方式，控制藉由MFC241之各種氣體(冷卻氣體)的流量調整動作、閥243的開閉動作、根據壓力感測器245之藉由APC閥244的壓力調整動作、真空泵246的起動及停止、根據溫度感測器263之微波產生器655的輸出調整動作、根據溫度感測器263之MFC241的流量調整動作及微波產生器655的輸出調整動作、藉由驅動機構267之載置台210(或晶舟217)的旋轉及旋轉速度調節動作、或昇降動作等。The CPU 121a is configured to read and execute a control program from the memory device 121c, and read a prescription from the memory device 121c in accordance with an input of an operation instruction from the input / output device 122 or the like. The CPU 121a is configured to control the flow adjustment operation of various gases (cooling gas) by the MFC 241, the opening and closing operation of the valve 243, and the APC valve 244 by the pressure sensor 245 in accordance with the contents of the readout prescription. Pressure adjustment operation of the vacuum pump 246, start and stop of the vacuum pump 246, output adjustment operation of the microwave generator 655 of the temperature sensor 263, flow adjustment operation of the MFC241 of the temperature sensor 263, and output adjustment operation of the microwave generator 655, The rotation and rotation speed adjustment operation of the mounting table 210 (or the wafer boat 217) by the driving mechanism 267, or the raising and lowering operation.
控制器121是可藉由將被儲存於外部記憶裝置(例如硬碟等的磁碟、CD等的光碟、MO等的光磁碟、USB記憶體等的半導體記憶體)123的上述的程式安裝於電腦來構成。記憶裝置121c或外部記憶裝置123是構成為電腦可讀取的記錄媒體。在被記憶於此電腦可讀取的記錄媒體的程式是包含有關在圖9、圖10及圖11所說明的微波產生器655的輸出調整動作的控制之記述。以下，亦將該等總簡稱為記錄媒體。在本說明書中使用所謂記錄媒體的言辭時，有只包含記憶裝置121c單體時，只包含外部記憶裝置123單體時，或包含該等的雙方時。另外，對電腦的程式的提供是亦可不使用外部記憶裝置123，而利用網際網路或專用線路等的通訊手段來進行。The controller 121 can be installed by the above-mentioned program stored in an external memory device (for example, a magnetic disk such as a hard disk, an optical disk such as a CD, an optical magnetic disk such as a MO, and a semiconductor memory such as a USB memory) 123. To computer. The memory device 121c or the external memory device 123 is a computer-readable recording medium. The program stored in the computer-readable recording medium includes a description of the control of the output adjustment operation of the microwave generator 655 described with reference to FIGS. 9, 10, and 11. Hereinafter, these are collectively referred to simply as a recording medium. In the present description, the words “recording medium” are used, including only the memory device 121c alone, only the external memory device 123 alone, or both of them. In addition, the program for the computer may be provided by using a communication means such as the Internet or a dedicated line without using the external memory device 123.
(2)基板處理工程
其次，說明使用基板處理裝置100的處理爐的基板處理方法。在此說明的基板處理方法是按照圖7所示的處理流程來說明有關使用上述的基板處理裝置100的處理爐，半導體裝置(裝置)的製造工程之一工程，例如，作為被形成於基板上的含矽膜的非晶矽膜的改質(結晶化)工程之一例。在以下的說明中，構成基板處理裝置100的各部的動作是藉由控制器121來控制。(2) Substrate Processing Process Next, a substrate processing method using a processing furnace of the substrate processing apparatus 100 will be described. The substrate processing method described here is a process for manufacturing a semiconductor device (device) using the above-mentioned substrate processing apparatus 100 according to the processing flow shown in FIG. 7. For example, it is formed on a substrate. An example of a modification (crystallization) process of an amorphous silicon film containing a silicon film. In the following description, the operation of each unit constituting the substrate processing apparatus 100 is controlled by the controller 121.
在此，在本說明書中使用所謂「晶圓」的言辭時，有意思晶圓本身時，或意思晶圓與被形成於其表面的預定的層或膜的層疊體時。在本說明書中使用所謂「晶圓的表面」的言辭時，有意思晶圓本身的表面時，或意思被形成於晶圓上的預定的層等的表面時。在本說明書中記載成「在晶圓上形成預定的層」時，有意思在晶圓本身的表面上直接形成預定的層時，或意思在被形成於晶圓上的層等之上形成預定的層時。在本說明書中使用所謂「基板」的言辭時，亦與使用所謂「晶圓」的言辭時同義。Here, when the term "wafer" is used in this specification, when the wafer itself is interesting, or when a laminate of a wafer and a predetermined layer or film formed on the surface is interesting. When the term "surface of a wafer" is used in this specification, when the surface of the wafer itself is of interest, or when it is meant to be formed on a surface of a predetermined layer or the like on the wafer. In this specification, when "predetermined layers are formed on a wafer", it is intended to form a predetermined layer directly on the surface of the wafer itself, or to form a predetermined layer on a layer or the like formed on the wafer. Layer time. When the term "substrate" is used in this specification, it is also synonymous with the term "wafer".
(基板搬入工程(S401))
如圖1所示般，一旦預定片數的晶圓200被移載至晶舟217，則驅動機構267是藉由使載置台210上昇來將晶舟217搬入至反應管103內側的處理室201(晶舟裝載)(S401)。(Substrate carrying-in process (S401))
As shown in FIG. 1, once a predetermined number of wafers 200 are transferred to the wafer boat 217, the driving mechanism 267 moves the wafer boat 217 into the processing chamber 201 inside the reaction tube 103 by raising the mounting table 210. (Boat Loading) (S401).
(爐內壓力(S402))
一旦往處理室201內的晶舟217的搬入完了，則以處理室201內成為預定的壓力(例如10~102000Pa)之方式控制處理室201內的氣氛。具體而言，一面藉由真空泵246來排氣，一面根據藉由壓力感測器245所檢測出的壓力資訊來反餽控制壓力調整器244的閥開度，將處理室201內設為預定的壓力。(Pressure in the furnace (S402))
Once the wafer boat 217 in the processing chamber 201 has been carried in, the atmosphere in the processing chamber 201 is controlled so that the pressure in the processing chamber 201 becomes a predetermined pressure (for example, 10 to 102000 Pa). Specifically, while the air is exhausted by the vacuum pump 246, the valve opening degree of the pressure regulator 244 is feedback-controlled based on the pressure information detected by the pressure sensor 245, and the processing chamber 201 is set to a predetermined pressure. .
(惰性氣體供給工程(S403))
一旦藉由爐內壓力S402來將處理室201內的壓力控制成預定的值，則驅動機構267使軸255旋轉，且經由載置台210上的晶舟217來使晶圓200旋轉。此時，氮氣體等的惰性氣體會經由氣體供給管232來供給(S403)。而且，此時，處理室201內的壓力是成為10Pa以上，102000Pa以下的範圍的預定的值，例如被調整成為101300Pa以上，101650Pa以下。另外，軸是亦可在基板搬入工程S401時，亦即將晶圓200搬入至處理室201內完了後使旋轉。又，本工程是亦可與爐內壓力S402同時實施，作為爐內壓力調整方法。(Inert gas supply process (S403))
Once the pressure in the processing chamber 201 is controlled to a predetermined value by the furnace pressure S402, the driving mechanism 267 rotates the shaft 255 and rotates the wafer 200 through the wafer boat 217 on the mounting table 210. At this time, an inert gas such as a nitrogen gas is supplied through the gas supply pipe 232 (S403). At this time, the pressure in the processing chamber 201 is a predetermined value in a range of 10 Pa or more and 102000 Pa or less, and is adjusted to 101300 Pa or more and 101650 Pa or less, for example. In addition, the axis may be rotated when the substrate 200 is moved into the processing chamber 201 when the substrate is moved into the process S401. In addition, this process can be implemented simultaneously with the furnace pressure S402 as a method for adjusting the furnace pressure.
(改質工程(S404))
一旦將處理室201內維持成為預定的壓力，則微波產生器655是經由上述的各部來供給微波至處理室201內。藉由微波被供給至處理室201內，加熱晶圓200成為100℃以上，1000℃以下的溫度，合適是加熱成為400℃以上，900℃以下的溫度，更合適是加熱成為500℃以上，700℃以下的溫度。藉由在如此的溫度下處理基板，晶圓200會成為在效率佳吸收微波的溫度下的基板處理，可提升改質處理的速度。換言之，若在比100℃更低的溫度，或比1000℃更高的溫度下處理晶圓200，則晶圓200的表面會變質，難吸收微波，所以難加熱晶圓200。因此，最好在上述的溫度帶進行基板處理。為了維持如此的基板處理的溫度帶，在改質處理(退火處理)中進行冷卻處理為理想。(Modification Works (S404))
Once the inside of the processing chamber 201 is maintained at a predetermined pressure, the microwave generator 655 supplies microwaves to the inside of the processing chamber 201 through the above-mentioned sections. The microwave is supplied into the processing chamber 201, and the heated wafer 200 is heated to a temperature of 100 ° C or higher and 1000 ° C or lower, preferably a temperature of 400 ° C or higher and 900 ° C or lower, more preferably a temperature of 500 ° C or higher, and 700. Temperature below ℃. By processing the substrate at such a temperature, the wafer 200 will become a substrate processing at a temperature that efficiently absorbs microwaves, and the speed of the modification processing can be improved. In other words, if the wafer 200 is processed at a temperature lower than 100 ° C. or a temperature higher than 1000 ° C., the surface of the wafer 200 will be deteriorated, it will be difficult to absorb microwaves, and it will be difficult to heat the wafer 200. Therefore, it is preferable to perform substrate processing in the above-mentioned temperature range. In order to maintain such a temperature range of substrate processing, it is desirable to perform a cooling process in a modification process (annealing process).
例如，在以利用電磁波的加熱方式進行加熱的本實施形態中，是在處理室201產生駐波，在晶圓200 (加熱板被載置時，加熱板也與晶圓200同樣)上產生局部地被加熱的加熱集中區域(熱點)及除此以外的未被加熱的區域(非加熱區域)，為了抑制晶圓200(加熱板被載置時，加熱板也與晶圓200同樣)變形，而藉由控制電磁波供給部的電源的ON/OFF來抑制在晶圓200產生熱點。For example, in this embodiment in which heating is performed by an electromagnetic wave heating method, a standing wave is generated in the processing chamber 201, and a local portion is generated on the wafer 200 (when the heating plate is placed, the heating plate is the same as the wafer 200). In order to suppress the deformation of the wafer 200 (when the heating plate is placed, the heating plate is the same as the wafer 200) in order to suppress the deformation of the wafer 200 (the heating plate is also the same as the wafer 200). By controlling ON / OFF of the power supply of the electromagnetic wave supply unit, hot spots are suppressed from being generated on the wafer 200.
在本實施形態中，特別是在微波的照射初期的晶圓200的昇溫時，為了防止晶圓200彎曲，而實施以下的1)或2)，或者1)及2)的組合。In this embodiment, in particular, when the temperature of the wafer 200 is increased at the initial stage of microwave irradiation, in order to prevent the wafer 200 from being bent, the following 1) or 2), or a combination of 1) and 2) is performed.
1)從微波產生器655開始供給微波至晶圓200，且從氣體供給部的氣體導入口222開始供給冷卻氣體至反應室201，藉由溫度感測器263a、263b來測定晶圓200的中央部及邊緣部的溫度。當晶圓200的邊緣部的溫度比晶圓200的中央部高時，以晶圓200的邊緣部的溫度變低之方式，(I)使從氣體供給部的氣體導入口222供給至反應室201的冷卻氣體的供給流量增加，且(II)以對於晶圓200的電磁場強度成為預定的電磁場強度之方式(以晶圓200的邊緣部的電磁場強度變弱之方式)，停止來自複數的微波產生器(第1微波產生器655-1、第2微波產生器655-2、第3微波產生器655-3、第4微波產生器655-4、第5微波產生器655-5、第6微波產生器655-6)之中至少1個的微波產生器的微波的產生。1) The microwave generator 655 starts supplying microwaves to the wafer 200, and the cooling gas is supplied from the gas inlet 222 of the gas supply unit to the reaction chamber 201. The center of the wafer 200 is measured by the temperature sensors 263a and 263b. And edge temperature. When the temperature of the edge portion of the wafer 200 is higher than that of the central portion of the wafer 200, the temperature of the edge portion of the wafer 200 is lowered, and (I) the gas introduction port 222 from the gas supply portion is supplied to the reaction chamber. The supply flow rate of the cooling gas of 201 is increased, and (II) the electromagnetic field strength to the wafer 200 becomes a predetermined electromagnetic field strength (the electromagnetic field strength of the edge portion of the wafer 200 is weakened), and the microwaves from the plurality are stopped Generators (first microwave generator 655-1, second microwave generator 655-2, third microwave generator 655-3, fourth microwave generator 655-4, fifth microwave generator 655-5, sixth Generation of microwaves from at least one of the microwave generators 655-6).
2)從微波產生器655開始供給微波至晶圓200，且從氣體供給部的氣體導入口222開始供給冷卻氣體至反應室201，藉由溫度感測器263a、263b來測定晶圓200的中央部及邊緣部的溫度。當晶圓200的中央部的溫度比晶圓200的邊緣部高時，以晶圓200的中央部的溫度變低之方式，(I)使從氣體供給部的氣體導入口222供給至反應室201的冷卻氣體的供給流量減少乃至降低，且(II)以對於晶圓200的電磁場強度成為預定的電磁場強度之方式(以晶圓200的中央部的電磁場強度變弱之方式)，停止來自複數的微波產生器(第1微波產生器655-1、第2微波產生器655-2、第3微波產生器655-3、第4微波產生器655-4、第5微波產生器655-5、第6微波產生器655-6)之中至少1個的微波產生器的微波的產生。2) The microwave generator 655 starts supplying microwaves to the wafer 200, and the cooling gas is supplied from the gas inlet 222 of the gas supply unit to the reaction chamber 201. The center of the wafer 200 is measured by the temperature sensors 263a and 263b. And edge temperature. When the temperature of the central portion of the wafer 200 is higher than the edge portion of the wafer 200, the temperature of the central portion of the wafer 200 is lowered, and (I) the gas introduction port 222 from the gas supply portion is supplied to the reaction chamber. The supply flow rate of the cooling gas of 201 is reduced or even decreased, and (II) the electromagnetic field strength to the wafer 200 becomes a predetermined electromagnetic field strength (so that the electromagnetic field strength of the central portion of the wafer 200 becomes weaker), the plural stops Microwave generator (first microwave generator 655-1, second microwave generator 655-2, third microwave generator 655-3, fourth microwave generator 655-4, fifth microwave generator 655-5, The sixth microwave generator 655-6) generates microwaves from at least one of the microwave generators.
亦即，在改質工程(S404)中，藉由溫度感測器263a、263b來測定晶圓200(隔熱板101a或加熱板1011a)的溫度。測定的結果，當晶圓200的邊緣部的溫度比晶圓200的中央部的溫度高時，調整從氣體供給部供給的冷卻氣體(例如N2 氣體)的供給流量(增加供給流量)，且以基板200的邊緣部的溫度降低之方式，一邊將來自複數的微波產生器的微波的合計輸出維持於預定的輸出值，一邊停止複數的微波產生器(第1微波產生器655-1、第2微波產生器655-2、第3微波產生器655-3、第4微波產生器655-4、第5微波產生器655-5、第6微波產生器655-6)之中的至少1個，朝晶圓200供給微波。例如，停止第5微波產生器655-5，從第1微波產生器655-1、第2微波產生器655-2、第3微波產生器655-3、第4微波產生器655-4、及、第6微波產生器655-6供給微波至晶圓200。That is, in the modification process (S404), the temperature of the wafer 200 (the heat insulation plate 101a or the heating plate 1011a) is measured by the temperature sensors 263a and 263b. As a result of the measurement, when the temperature of the edge portion of the wafer 200 is higher than the temperature of the central portion of the wafer 200, the supply flow rate (increase supply flow rate) of the cooling gas (for example, N 2 gas) supplied from the gas supply portion is adjusted, and The plurality of microwave generators (the first microwave generator 655-1, the first microwave generator, and the first microwave generator 655-1, the first 2 microwave generator 655-2, 3rd microwave generator 655-3, 4th microwave generator 655-4, 5th microwave generator 655-5, 6th microwave generator 655-6) Microwaves are supplied to the wafer 200. For example, the fifth microwave generator 655-5 is stopped, and the first microwave generator 655-1, the second microwave generator 655-2, the third microwave generator 655-3, the fourth microwave generator 655-4, and The sixth microwave generator 655-6 supplies microwaves to the wafer 200.
並且，在改質工程中，藉由溫度感測器263a、263b來測定晶圓200(隔熱板101a或加熱板1011a)的溫度，當晶圓200的中央部的溫度比晶圓200的邊緣部的溫度高時，調整從氣體供給部供給的冷卻氣體(例如N2 氣體)的供給流量(降低供給流量)，且以晶圓200的中央部的溫度降低之方式，一邊將來自複數的微波產生器的微波的合計輸出維持於預定的輸出值，一邊停止複數的微波產生器(第1微波產生器655-1、第2微波產生器655-2、第3微波產生器655-3、第4微波產生器655-4、第5微波產生器655-5、第6微波產生器655-6)之中的至少1個，朝晶圓200供給微波。例如，停止第2微波產生器655-2，從第1微波產生器655-1、第3微波產生器655-3、第4微波產生器655-4、第5微波產生器655-5及第6微波產生器655-6供給微波至晶圓200。In the modification process, the temperature of the wafer 200 (the thermal insulation plate 101a or the heating plate 1011a) is measured by the temperature sensors 263a and 263b. When the temperature of the central portion of the wafer 200 is higher than the edge of the wafer 200 When the temperature of the portion is high, the supply flow rate of the cooling gas (for example, N 2 gas) supplied from the gas supply portion is adjusted (decreased the supply flow rate), and a plurality of microwaves from The total microwave output of the generator is maintained at a predetermined output value, and the plural microwave generators are stopped (the first microwave generator 655-1, the second microwave generator 655-2, the third microwave generator 655-3, the first microwave generator At least one of the 4 microwave generators 655-4, the 5th microwave generator 655-5, and the 6th microwave generator 655-6) supplies microwaves to the wafer 200. For example, the second microwave generator 655-2 is stopped, and the first microwave generator 655-1, the third microwave generator 655-3, the fourth microwave generator 655-4, the fifth microwave generator 655-5, and the first microwave generator 655-1 are stopped. 6 The microwave generator 655-6 supplies microwaves to the wafer 200.
藉此，可防止在微波照射的初期產生的晶圓200的彎曲，且可使晶圓200的面內的溫度形成均一，因此可進行均一的基板處理。Thereby, it is possible to prevent the wafer 200 from being warped at the initial stage of the microwave irradiation, and to make the temperature in the surface of the wafer 200 uniform, so that uniform substrate processing can be performed.
藉由以上般控制微波產生器655，加熱晶圓200，使被形成於晶圓200表面上的非晶矽膜改質(結晶化)成多晶矽膜。亦即，可均一地改質晶圓200。By controlling the microwave generator 655 as described above, the wafer 200 is heated, and the amorphous silicon film formed on the surface of the wafer 200 is modified (crystallized) into a polycrystalline silicon film. That is, the wafer 200 can be modified uniformly.
另外，當晶圓200的測定溫度超出上述的臨界值而變高或變低時，亦可不是關閉微波產生器655，而是藉由控制為降低微波產生器655的輸出，使晶圓200的溫度成為預定的範圍的溫度。此情況，被控制為一旦晶圓200的溫度回到預定的範圍的溫度，則提高微波產生器655的輸出。In addition, when the measurement temperature of the wafer 200 becomes higher or lower than the above-mentioned critical value, instead of turning off the microwave generator 655, the output of the microwave generator 655 may be controlled to reduce the output of the wafer 200. The temperature becomes a temperature in a predetermined range. In this case, when the temperature of the wafer 200 returns to a temperature in a predetermined range, the output of the microwave generator 655 is increased.
若經過被預定的處理時間，則停止晶舟217的旋轉、氣體的供給、微波的供給及排氣管的排氣。然後，至晶圓200的溫度形成預定的溫度為止，冷卻晶圓200。When the predetermined processing time has elapsed, the rotation of the wafer boat 217, the supply of gas, the supply of microwaves, and the exhaust of the exhaust pipe are stopped. Then, the wafer 200 is cooled until the temperature of the wafer 200 reaches a predetermined temperature.
(搬出工程(S405))
使處理室201內的壓力恢復大氣壓之後，驅動機構267是使載置台210下降，藉此使爐口形成開口，且將晶舟217搬出至搬送空間203(晶舟卸載)。然後將被載置於晶舟的晶圓200搬出至位於搬送空間23的外部的搬送室(S405)。(Moving out process (S405))
After returning the pressure in the processing chamber 201 to atmospheric pressure, the driving mechanism 267 lowers the mounting table 210, thereby opening the furnace mouth, and carrying out the wafer boat 217 to the transfer space 203 (the wafer boat unloading). The wafer 200 placed in the wafer boat is then carried out to a transfer chamber located outside the transfer space 23 (S405).
藉由重複以上的動作，改質處理晶圓200。By repeating the above operations, the wafer 200 is modified and processed.
(3)溫度控制方法
以下，利用圖面來說明有關改質工程S404的溫度控制方法。在以下的說明中，所謂微波產生器655的輸出(POWER)是意思被照射至處理箱102內或處理室201內的微波的輸入電力。又，如圖1及圖3所示般，當設有複數的微波產生器655-1~655-6時，無特別記載時，所謂微波產生器655的輸出是意思從複數的微波產生器655-1~655-6照射的各微波的輸出的合計。
實施例1(3) Temperature control method The temperature control method of the modification project S404 will be described below with reference to drawings. In the following description, the output (POWER) of the microwave generator 655 means the input power of microwaves radiated into the processing box 102 or the processing chamber 201. In addition, as shown in FIGS. 1 and 3, when a plurality of microwave generators 655-1 to 655-6 are provided, unless otherwise noted, the output of the microwave generator 655 means that the plurality of microwave generators 655 The total output of each microwave irradiated from -1 to 655-6.
Example 1
利用圖8說明有關實施例1。在實施例1中，說明在改質工程(S404)的昇溫期間，藉由來自複數的微波產生器655-1~665-6的微波的照射位置的最適化之電磁場分佈的變更，來減低晶圓200彎曲量的構成例。A first embodiment will be described with reference to FIG. 8. In Example 1, it will be described that during the heating period of the modification process (S404), the crystal field is reduced by changing the optimized electromagnetic field distribution of the microwave irradiation positions from the plurality of microwave generators 655-1 to 665-6. An example of the configuration of the circle 200 bending amount.
圖9是與圖8同樣，代表性地例示，基板搬入工程(S401)、惰性氣體供給工程(S403)、改質工程(S404)及基板搬出工程(S405)，作為基板處理工程。並且，改質工程(S404)是例如分成昇溫期間、改質期間及冷卻期間。FIG. 9 is a typical example similar to FIG. 8, and illustrates a substrate carrying-in process (S401), an inert gas supply process (S403), a modification process (S404), and a substrate carrying-out process (S405) as substrate processing processes. The upgrading process (S404) is divided into, for example, a temperature rising period, a modifying period, and a cooling period.
朝反應室201內供給之微波產生器655的輸出(POWER)是在改質工程(S404)的昇溫期間及改質期間，被設為10kW，除此以外的基板搬入工程(S401)、惰性氣體供給工程(S403)、改質工程(S404)的冷卻期間、基板搬出工程(S405)是微波產生器655的輸出(POWER)為0kW。The output (POWER) of the microwave generator 655 supplied into the reaction chamber 201 is set to 10 kW during the temperature rise period and the modification period of the modification process (S404), and other substrate moving-in processes (S401) and inert gas During the cooling period of the supply process (S403), the modification process (S404), and the substrate removal process (S405), the output (POWER) of the microwave generator 655 is 0 kW.
在改質工程(S404)的昇溫期間，複數的微波產生器655-1~655-6之中，來自1個微波產生器655-5的微波的產生會被停止(0kW)，從剩下的5個微波產生器(655-1、655-2、655-3、655-4、655-6)產生微波。各微波產生器(655-1、655-2、655-3、655-4、655-6)是分別產生2kW的微波，其合計輸出(POWER)為10kW。During the heating-up period of the upgrading process (S404), among the plurality of microwave generators 655-1 to 655-6, the generation of microwaves from one microwave generator 655-5 will be stopped (0kW). Five microwave generators (655-1, 655-2, 655-3, 655-4, 655-6) generate microwaves. Each microwave generator (655-1, 655-2, 655-3, 655-4, 655-6) generates a microwave of 2 kW, and its total output (POWER) is 10 kW.
另一方面，在改質工程(S404)的改質期間，複數的微波產生器655-1~655-6之中，來自1個微波產生器655-6的微波的產生會被停止(0kW)，從剩下的5個微波產生器(655-1、655-2、655-3、655-4、655-5)產生微波。各微波產生器(655-1、655-2、655-3、655-4、655-5)是分別產生2kW的微波，其合計輸出(POWER)為10kW。On the other hand, during the upgrading process of the upgrading process (S404), among the plurality of microwave generators 655-1 to 655-6, the generation of microwaves from one microwave generator 655-6 is stopped (0kW). , Generate microwaves from the remaining 5 microwave generators (655-1, 655-2, 655-3, 655-4, 655-5). Each microwave generator (655-1, 655-2, 655-3, 655-4, 655-5) generates a microwave of 2 kW, and its total output (POWER) is 10 kW.
藉由如此在改質工程(S404)的昇溫期間，微波的照射位置的最適化，適當地變更反應室201內的電磁場分佈，可減低改質工程(S404)的昇溫期間的晶圓200的彎曲量。藉此，可使晶圓200的面內溫度形成均一，因此可進行均一的基板處理。
實施例2By thus optimizing the irradiation position of the microwave during the temperature rising period of the modification process (S404) and appropriately changing the electromagnetic field distribution in the reaction chamber 201, the bending of the wafer 200 during the temperature rising period of the modification process (S404) can be reduced. the amount. Thereby, the in-plane temperature of the wafer 200 can be made uniform, so that uniform substrate processing can be performed.
Example 2
利用圖9來說明有關實施例2。在實施例2中，在改質工程(S404)的昇溫期間，根據晶圓200的邊緣部及中央部的計測溫度來適當地調整往晶圓200的邊緣部或外周部之冷卻氣體(N2氣體)的供給及藉由來自複數的微波產生器655-1~665-6的微波的照射位置的最適化之電磁場分佈的變更。A second embodiment will be described with reference to FIG. 9. In Example 2, during the temperature rise of the modification process (S404), the cooling gas (N2 gas) to the edge portion or the outer peripheral portion of the wafer 200 is appropriately adjusted in accordance with the measured temperature of the edge portion and the central portion of the wafer 200. ) Supply and changes in the optimized electromagnetic field distribution by the microwave irradiation positions from a plurality of microwave generators 655-1 to 665-6.
如圖9所示般，在改質工程(S404)的昇溫期間，將惰性氣體的供給流量設為30slm，且將晶圓200的旋轉數設為5.0rpm，複數的微波產生器655-1~655-6之中，來自1個微波產生器655-5的微波的產生會被停止(0kW)，從剩下的5個微波產生器(655-1、655-2、655-3、655-4、655-6)產生微波。As shown in FIG. 9, during the temperature increasing period of the modification process (S404), the supply flow rate of the inert gas is set to 30 slm, the number of rotations of the wafer 200 is set to 5.0 rpm, and a plurality of microwave generators 655-1 to Among 655-6, the generation of microwaves from one microwave generator 655-5 will be stopped (0kW). From the remaining five microwave generators (655-1, 655-2, 655-3, 655- 4, 655-6) generates microwaves.
另一方面，在改質工程(S404)的改質期間，將惰性氣體的供給流量設為5slm，且將晶圓200的旋轉數設為2.5rpm，複數的微波產生器655-1~655-6之中，來自1個微波產生器655-6的微波的產生會被停止(0kW)，從剩下的5個微波產生器(655-1、655-2、655-3、655-4、655-5)產生微波。
實施例3On the other hand, during the modification process of the modification process (S404), the supply flow rate of the inert gas is set to 5 slm, the number of rotations of the wafer 200 is set to 2.5 rpm, and a plurality of microwave generators 655-1 to 655- Among 6, the microwave generation from one microwave generator 655-6 will be stopped (0kW). From the remaining five microwave generators (655-1, 655-2, 655-3, 655-4, 655-5) generates microwaves.
Example 3
利用圖10來說明有關實施例3。圖10是表示在改質工程(S404)的控制流程。一旦此控制流程開始(start)，則開始往反應室201內之微波的供給，及從氣體導入口222往反應室201內之冷卻氣體的供給(S90)。微波是從微波產生器655-1~655-5產生(ON)的狀態，微波產生器655-6是停止。此時，作為冷卻氣體的惰性氣體的供給流量是30slm，晶圓200的旋轉數是5.0rpm。A third embodiment will be described with reference to FIG. 10. FIG. 10 shows a control flow during the upgrading process (S404). Once this control process is started, the supply of microwaves to the reaction chamber 201 and the supply of cooling gas from the gas introduction port 222 to the reaction chamber 201 are started (S90). Microwaves are generated (ON) from the microwave generators 655-1 to 655-5, and the microwave generators 655-6 are stopped. At this time, the supply flow rate of the inert gas as the cooling gas is 30 slm, and the number of rotations of the wafer 200 is 5.0 rpm.
其次，加熱板1011a的中心部的溫度(Tc)及加熱板1011a的邊緣部的溫度(Te)會如在圖2(C)所說明般，藉由溫度感測器263a、263b來檢測出(S91)。Next, the temperature (Tc) at the center portion of the heating plate 1011a and the temperature (Te) at the edge portion of the heating plate 1011a are detected by the temperature sensors 263a and 263b as described in FIG. 2 (C) ( S91).
S91之後，進行加熱板1011a的中心部的溫度(Tc)是否比加熱板1011a的邊緣部的溫度(Te)低(Tc＜Te)的判斷(S92)。當加熱板1011a的中心部的溫度(Tc)比加熱板1011a的邊緣部的溫度(Te)低(Tc＜Te)時(Y)，移至S93。另一方面，當加熱板1011a的中心部的溫度(Tc)比加熱板1011a的邊緣部的溫度(Te)高(Tc＞Te)時(N)，移至S94。After S91, it is determined whether the temperature (Tc) of the center part of the heating plate 1011a is lower than the temperature (Te) of the edge part of the heating plate 1011a (Tc <Te) (S92). When the temperature (Tc) at the center portion of the heating plate 1011a is lower than the temperature (Te) at the edge portion of the heating plate 1011a (Tc <Te) (Y), the process proceeds to S93. On the other hand, when the temperature (Tc) of the center portion of the heating plate 1011a is higher than the temperature (Te) of the edge portion of the heating plate 1011a (Tc> Te) (N), the process proceeds to S94.
在S93，由於加熱板1011a的中心部的溫度(Tc)比加熱板1011a的邊緣部的溫度(Te)低(Tc＜Te)，因此同樣可想像晶圓200的中心部的溫度比晶圓200的邊緣部的溫度低。並且，可想像晶圓200的中心部的電場強度比晶圓200的邊緣部的電場強度弱。因此，需要更冷卻晶圓200的邊緣部，使晶圓200的面內溫度均一化。而且，也需要將晶圓200的中心部的電場強度形成比晶圓200的邊緣部的電場強度強之類的控制。因此，調整冷卻氣體供給流量(使增加)，且例如停止第5微波產生器655-5，使第6微波產生器655-6動作(ON)(655-1~655-4、655-6：ON)。In S93, since the temperature (Tc) of the center portion of the heating plate 1011a is lower than the temperature (Te) of the edge portion of the heating plate 1011a (Tc <Te), it is also conceivable that the temperature of the center portion of the wafer 200 is higher than that of the wafer 200. The temperature of the edge portion is low. Further, it is conceivable that the electric field intensity at the center portion of the wafer 200 is weaker than the electric field intensity at the edge portion of the wafer 200. Therefore, it is necessary to cool the edge portion of the wafer 200 evenly and to uniformize the in-plane temperature of the wafer 200. Further, control such as making the electric field intensity at the center portion of the wafer 200 stronger than the electric field intensity at the edge portion of the wafer 200 is also required. Therefore, the cooling gas supply flow rate is adjusted (increase), and for example, the fifth microwave generator 655-5 is stopped, and the sixth microwave generator 655-6 is operated (ON) (655-1 to 655-4, 655-6: ON).
另一方面，在S94，由於加熱板1011a的中心部的溫度(Tc)比加熱板1011a的邊緣部的溫度(Te)高(Tc＞Te)，因此同樣可想像晶圓200的中心部的溫度比晶圓200的邊緣部的溫度高。並且，可想像晶圓200的中心部的電場強度比晶圓200的邊緣部的電場強度強。因此，需要降低晶圓200的邊緣部的冷卻，使晶圓200的面內溫度均一化。而且，也需要將晶圓200的中心部的電場強度形成比晶圓200的邊緣部的電場強度弱之類的控制。因此，調整冷卻氣體供給流量(使降低)，且例如停止第2微波產生器655-2，使第6微波產生器655-6動作(ON)(655-1，655-3~655-6：ON)。On the other hand, in S94, since the temperature (Tc) of the center portion of the heating plate 1011a is higher than the temperature (Te) of the edge portion of the heating plate 1011a (Tc> Te), the temperature of the center portion of the wafer 200 can also be imagined. The temperature is higher than the edge portion of the wafer 200. Further, it is conceivable that the electric field intensity at the center portion of the wafer 200 is stronger than the electric field intensity at the edge portion of the wafer 200. Therefore, it is necessary to reduce the cooling of the edge portion of the wafer 200 and to uniformize the in-plane temperature of the wafer 200. Further, control such as making the electric field intensity at the center portion of the wafer 200 weaker than the electric field intensity at the edge portion of the wafer 200 is also required. Therefore, the cooling gas supply flow rate is adjusted (reduced), and for example, the second microwave generator 655-2 is stopped, and the sixth microwave generator 655-6 is operated (ON) (655-1, 655-3 to 655-6: ON).
其次，檢測出加熱板1011a的中心部的溫度(Tc)，判斷被檢測出的溫度是否為改質期間的晶圓200的最適的溫度範圍內(Ta1＜Tc＜Ta2)(S95)。若加熱板1011a的中心部的溫度(Tc)為改質期間的晶圓200的最適的溫度範圍內(Ta1＜Tc＜Ta2)(Y)，則移至S96。另一方面，若加熱板1011a的中心部的溫度(Tc)不為改質期間的晶圓200的最適的溫度範圍內(Ta1＜Tc＜Ta2)(N)，則再度遷移至S91，重複實施S92，S93，S94及S95。Next, the temperature (Tc) of the center portion of the heating plate 1011a is detected, and it is determined whether the detected temperature is within the optimum temperature range of the wafer 200 during the modification (Ta1 <Tc <Ta2) (S95). If the temperature (Tc) of the central portion of the heating plate 1011a is within the optimum temperature range of the wafer 200 during the modification (Ta1 <Tc <Ta2) (Y), the process proceeds to S96. On the other hand, if the temperature (Tc) of the central portion of the heating plate 1011a is not within the optimum temperature range of the wafer 200 during the modification (Ta1 <Tc <Ta2) (N), the process is shifted to S91 again and repeated. S92, S93, S94 and S95.
在S96，判斷是否經過預先被設定的處理時間，若經過預先被設定的處理時間(Y)，則圖11的改質工程的控制流程結束。另一方面，若未經過預先被設定的處理時間(N)，則再度遷移至S91，重複實施S92、S93、S94、S95、S96。In S96, it is determined whether or not a preset processing time has elapsed. If the preset processing time (Y) has elapsed, the control flow of the upgrading project of FIG. 11 ends. On the other hand, if the preset processing time (N) has not elapsed, the process shifts to S91 again, and S92, S93, S94, S95, and S96 are repeated.
藉由以上，在改質工程(S404)中，根據晶圓200的邊緣部及中央部的計測溫度來適當地調整冷卻氣體的供給流量的調整及藉由微波的照射位置的最適化之反應室201內的電磁場分佈，可減低改質工程(S404)的晶圓200的彎曲量。藉此，可使晶圓200的面內溫度形成均一，可進行均一的基板處理。Based on the above, in the modification process (S404), the reaction chamber for the adjustment of the supply flow of the cooling gas and the optimization of the irradiation position by the microwave are appropriately adjusted based on the measured temperature of the edge portion and the central portion of the wafer 200. The electromagnetic field distribution in 201 can reduce the bending amount of the wafer 200 in the modification process (S404). Thereby, the in-plane temperature of the wafer 200 can be made uniform, and uniform substrate processing can be performed.
(實驗例及考察例)
圖11是表示照射微波時的基板與隔熱板的溫度推移之一例的圖。摻雜磷的直徑300mm的矽基板作為基板(以下亦稱為晶圓200)，直徑300mm的矽基板作為加熱板1011a，透明石英作為隔熱板101a設置於反應室201，微波為10kW，照射300秒時的晶圓200與隔熱板101a的溫度推移。(Experimental and Inspection Examples)
FIG. 11 is a diagram showing an example of temperature transitions between a substrate and a heat-insulating plate during microwave irradiation. A silicon substrate with a diameter of 300 mm doped with phosphorus is used as a substrate (hereinafter also referred to as wafer 200), a silicon substrate with a diameter of 300 mm is used as a heating plate 1011a, and transparent quartz is provided as a heat insulation plate 101a in the reaction chamber 201. The microwave is 10 kW and the irradiation is 300 The temperature of the wafer 200 and the heat insulation plate 101a at the second has changed.
圖11是晶圓200與隔熱板101a的溫度為測定其中心部者。如圖11所示般，在無層疊膜的晶圓200中也是若照射微波，則被加熱至預定的溫度。FIG. 11 shows the temperature of the wafer 200 and the heat insulating plate 101a when the center portions are measured. As shown in FIG. 11, when the wafer 200 without a laminated film is irradiated with microwaves, it is heated to a predetermined temperature.
若以10kW微波輸出進行基板處理，則至晶圓200的溫度安定為止，花費120秒程度時間，然後，在800℃附近，晶圓200的溫度安定。When substrate processing is performed with a microwave output of 10 kW, it takes about 120 seconds until the temperature of the wafer 200 is stabilized, and then, the temperature of the wafer 200 is stabilized around 800 ° C.
透明石英的隔熱板101a是對微波不易作用，因為藉由來自加熱板1011a的輻射而被加熱，所以隔熱板101a的溫度是在300秒達到350℃，但為了隔熱板101a的溫度安定，要再花費一點時間。The transparent quartz heat insulation plate 101a does not easily act on microwaves. Because it is heated by radiation from the heating plate 1011a, the temperature of the heat insulation plate 101a reaches 350 ° C in 300 seconds, but the temperature of the heat insulation plate 101a is stable. It takes a little more time.
在晶圓200的溫度上昇的微波照射的初期(30秒)，在晶圓200產生彎曲，在晶圓200的溫度為800℃附近的溫度安定區域(150秒)，晶圓200的彎曲減低，為與微波的照射前(0秒)大致相同情況。At the initial stage (30 seconds) of microwave irradiation where the temperature of the wafer 200 rises, warpage occurs in the wafer 200, and in a temperature stabilization region (150 seconds) near the temperature of the wafer 200, the warpage of the wafer 200 decreases. This is almost the same as before the microwave irradiation (0 seconds).
晶圓200的彎曲是從微波的照射開始約60秒產生，然後彎曲量變小。The bending of the wafer 200 is generated from the irradiation of microwaves for about 60 seconds, and then the amount of bending becomes small.
如此，照射預定高的微波輸出(POWER)至晶圓200時，在晶圓200的基板溫度上昇的微波照射的初期(30秒)，在晶圓200產生彎曲。此傾向是在晶圓200上有對微波容易作用的材料或膜時也相同。但，此情況，僅材料或膜對微波容易作用的部分，材料或膜的溫度比晶圓200更高，即使低的微波輸出(POWER)也容易取得所望的溫度。In this way, when a predetermined high microwave output (POWER) is irradiated to the wafer 200, the wafer 200 is warped at the initial stage (30 seconds) of the microwave irradiation where the substrate temperature of the wafer 200 rises. This tendency is the same when there is a material or a film which is easy to act on microwaves on the wafer 200. However, in this case, the temperature of the material or film is higher than that of the wafer 200 only in the portion where the material or film easily acts on the microwave, and the desired temperature can be easily obtained even with a low microwave output (POWER).
圖12是表示矽基板的微波的吸收率與微波的反射率的溫度依存性的圖。微波的吸收率與反射率是依據自由空間法測定。微波是測定頻率8.2GHz與頻率12.4GHz的情況。FIG. 12 is a graph showing the temperature dependence of the microwave absorbance and microwave reflectance of a silicon substrate. The microwave absorptivity and reflectance are measured according to the free space method. The microwave was measured at a frequency of 8.2 GHz and a frequency of 12.4 GHz.
頻率8.2GHz與12.4GHz的晶圓200的吸收率是在室溫附近為40%以上，但隨著晶圓200的溫度變高，吸收率降低，在晶圓200的溫度比600℃高的溫度是吸收率約成為13%。The absorptivity of wafer 200 at frequencies of 8.2 GHz and 12.4 GHz is more than 40% near room temperature, but as the temperature of wafer 200 becomes higher, the absorptivity decreases. The temperature of wafer 200 is higher than 600 ° C. The absorption rate is about 13%.
反射率是在低溫區域(室溫~200℃)為20~50%左右，但在晶圓200的溫度為400℃以上是約成為80%。The reflectance is about 20 to 50% in a low temperature region (room temperature to 200 ° C), but it is about 80% when the temperature of the wafer 200 is 400 ° C or higher.
晶圓200的溫度上昇的微波照射的初期(30秒)的晶圓200的溫度是形成容易吸收微波的室溫~400℃左右。The temperature of the wafer 200 at the initial stage (30 seconds) of the microwave irradiation where the temperature of the wafer 200 rises is about room temperature to about 400 ° C., where microwaves are easily absorbed.
晶圓200的彎曲產生的微波照射開始60秒之間的晶圓200的中心部的溫度是25℃~740℃左右，在晶圓200的昇溫的過程，也包含容易吸收微波的25℃~400℃的溫度帶。The temperature of the central portion of the wafer 200 between the start of microwave irradiation by the bending of the wafer 200 and the temperature of the wafer 200 is about 25 ° C. to 740 ° C. During the heating process of the wafer 200, 25 ° C. to 400, which easily absorbs microwaves, is included. ℃ temperature band.
一般，若晶圓200的中央部的溫度Tc與晶圓200的外周部(邊緣部)的溫度Te的溫度差為「中央部的溫度Tc＜外周部的溫度Te」，則晶圓200是彎曲成鞍型。又，若晶圓200的溫度差為「中央部的溫度Tc＞外周部的溫度Te」，則晶圓200是彎曲成圓頂型。就晶圓200彎曲5mm-10mm而言，晶圓200的溫度約為300℃~500℃時是須晶圓200的面內的溫度差約為45℃~85℃。Generally, if the temperature difference between the temperature Tc of the central portion of the wafer 200 and the temperature Te of the outer peripheral portion (edge portion) of the wafer 200 is "temperature Tc of the central portion <temperature Te of the outer peripheral portion", the wafer 200 is bent into Saddle type. When the temperature difference between the wafers 200 is "the temperature Tc in the central portion> the temperature Te in the outer peripheral portion", the wafer 200 is curved into a dome shape. As far as the wafer 200 is bent from 5 mm to 10 mm, when the temperature of the wafer 200 is about 300 ° C. to 500 ° C., the temperature difference within the plane of the wafer 200 is about 45 ° C. to 85 ° C.
若考慮以上，則在晶圓200產生彎曲的結構是可思考成以下般。Taking the above into consideration, the structure in which the wafer 200 is bent can be considered as follows.
以微波輸出為10kW較高輸出來照射微波時，從微波輸出照射開始到60秒的晶圓200的昇溫時的溫度帶是晶圓200較容易吸收微波的溫度帶。因此，即使是微波的稍微的照射不均，也會處於晶圓200的面內溫度差容易變大的狀態。When microwaves are irradiated with a microwave output of 10 kW and a higher output, the temperature band of the wafer 200 when the wafer 200 is heated up from the start of the microwave output irradiation to 60 seconds is the temperature band in which the wafer 200 absorbs microwaves more easily. Therefore, even if the microwave is slightly irradiated unevenly, the in-plane temperature difference of the wafer 200 is likely to become large.
晶圓200的溫度分佈是晶圓200的中央部的溫度Tc與晶圓200的外周部(邊緣部)的溫度Te的溫度差為「中央部的溫度Tc＜外周部的溫度Te」，其溫度差約成為45℃~85℃，可想像晶圓200彎曲成鞍型。一旦晶圓200的面內溫度差變大，則晶圓200更大彎曲，因此恐有晶圓200與加熱板1011a衝突之虞。The temperature distribution of the wafer 200 is a temperature difference between the temperature Tc of the central portion of the wafer 200 and the temperature Te of the outer peripheral portion (edge portion) of the wafer 200 as "the temperature Tc of the central portion <the temperature Te of the outer peripheral portion", and its temperature The difference is approximately 45 ° C to 85 ° C, and it is conceivable that the wafer 200 is bent into a saddle shape. Once the in-plane temperature difference of the wafer 200 becomes larger, the wafer 200 is more bent, so there is a possibility that the wafer 200 and the heating plate 1011a may collide.
圖13所示的處理樣品是具有：矽(Si)基板(Si-Sub)、被形成於Si基板上的熱氧化膜SiO2 及被形成於此熱氧化膜SiO2 上之含磷的矽膜(P-doped Si膜)。熱氧化膜SiO2 的膜厚是約1000Å程度。此熱氧化膜SiO2 是例如在具備電阻加熱加熱器的縱型基板處理裝置中，在900℃氧環境下使氧O擴散於Si基板的表面形成的Si氧化膜。P-doped Si膜是其膜厚約為3000Å，磷(P)濃度是1e21 atoms/cm3 。此P-doped Si膜是例如在具備電阻加熱加熱器的縱型基板處理裝置中，在反應室溫度500~650℃減壓下的反應室內導入SiH4 (矽烷：Monosilane)與PH3 (三氫化磷：Phosphine)，在預先搬送固定於反應室內的基板上堆積･成膜形成。The processing sample shown in FIG. 13 includes a silicon (Si) substrate (Si-Sub), a thermal oxide film SiO 2 formed on the Si substrate, and a phosphorus-containing silicon film formed on the thermal oxide film SiO 2 . (P-doped Si film). The film thickness of the thermal oxidation film SiO 2 is about 1000 Å. This thermal oxide film SiO 2 is, for example, a Si oxide film formed by diffusing oxygen O on the surface of a Si substrate in an oxygen environment at 900 ° C. in a vertical substrate processing apparatus including a resistance heating heater. The P-doped Si film has a film thickness of about 3000 Å and a phosphorus (P) concentration of 1e 21 atoms / cm 3 . This P-doped Si film is made of, for example, a vertical substrate processing apparatus equipped with a resistance heating heater, and SiH 4 (Monosilane) and PH 3 (trihydrogen) are introduced into the reaction chamber under a reduced pressure of the reaction chamber temperature of 500 to 650 ° C. Phosphine (Phosphine) was deposited on a substrate that was transported and fixed in a reaction chamber in advance to form a film.
一旦對圖13的處理樣品進行微波照射，則非晶質的P-doped Si膜結晶化。但，若微波的照射時間半途而廢，則會產生處理不均。這是因為微波處理者的處理時間不夠充分，所以存在結晶化之處與結晶化不夠充分之處，處理不均成為同心圓狀的干涉條紋顯現。When the processed sample of FIG. 13 is subjected to microwave irradiation, the amorphous P-doped Si film is crystallized. However, if the microwave irradiation time is abandoned halfway, processing unevenness may occur. This is because the processing time of the microwave processor is not sufficient, so there are crystallization and insufficient crystallization, and the processing unevenness appears as concentric interference fringes.
一旦照射微波至反應室201內，則以微波產生器的頻率、反應室201的尺寸、反應室201內的材料(晶圓200、加熱板1011a、隔熱板101a等)等作為參數的固有的電磁場分佈會被形成於反應室201內。此電磁場分佈也依存於材料的溫度。Once the microwave is irradiated into the reaction chamber 201, the frequency of the microwave generator, the size of the reaction chamber 201, the materials in the reaction chamber 201 (wafer 200, heating plate 1011a, thermal insulation plate 101a, etc.) are inherent parameters as parameters. The electromagnetic field distribution is formed in the reaction chamber 201. This electromagnetic field distribution also depends on the temperature of the material.
在如此的電磁場分佈存在中，由於晶圓200是旋轉，因此電磁場的強弱會在晶圓200上成為同心圓狀的4~5個的圓圈圖案顯現。雖僅特定處會藉由微波的照射而作用加熱，但當拉長時間而可確保充分的處理時間時，熱會傳導至晶圓200全體，在晶圓200全體中結晶化完了。In the presence of such an electromagnetic field distribution, since the wafer 200 rotates, the strength of the electromagnetic field will appear on the wafer 200 in a pattern of 4 to 5 concentric circles. Although heating is applied by microwave irradiation only in a specific place, when a sufficient processing time can be secured for a long time, heat is transmitted to the entire wafer 200 and crystallization is completed in the entire wafer 200.
亦即，意思若處理時間不夠充分，則從該處理不均變成怎樣的電磁場分佈，形成驗證的線索。That is, if the processing time is insufficient, the electromagnetic field distribution from the processing unevenness becomes a clue for verification.
此處理不均是可藉由測定薄膜電阻值(Rs)來數值化。藉由四探針法測定後的薄膜電阻值(Rs)是表示持有一樣的厚度的薄膜或薄膜狀物質的電阻的量之一，表示物質或材料的電氣的通過難度。若結晶化･活性化，則電氣容易流動，因此薄膜電阻值(Rs)變小，若非晶質則變大。非晶質的P-Doped Si膜是藉由熱退火在550℃附近以上結晶化･活性化為人所知。因此，藉由取得非晶質P-Doped Si膜的晶圓200全面的薄膜電阻值(Rs)的地圖資料，可掌握在550℃附近的反應室201內的電磁場分佈。This processing unevenness can be quantified by measuring the sheet resistance value (Rs). The sheet resistance value (Rs) measured by the four-probe method is one of the amounts of resistance representing a thin film or a thin film-like substance having the same thickness, and it indicates the difficulty of the electrical passage of a substance or material. When the crystallized rhenium is activated, electricity flows easily, so the sheet resistance value (Rs) becomes smaller, and if it is amorphous, it becomes larger. The amorphous P-Doped Si film is known to be activated by crystallizing rhenium at a temperature above 550 ° C by thermal annealing. Therefore, by acquiring map data of the entire sheet resistance value (Rs) of the wafer 200 of the amorphous P-Doped Si film, it is possible to grasp the electromagnetic field distribution in the reaction chamber 201 near 550 ° C.
圖14是表示薄膜電阻值(Rs)的面內分佈之與微波照射口的位置依存性的圖。若對含圖13的構造的非晶質P-Doped Si膜的晶圓200進行微波照射(4kW，300秒，+9kW，45秒)，則非晶質的P-Doped Si膜一部分結晶化，但產生處理不均。FIG. 14 is a graph showing the dependence of the in-plane distribution of the sheet resistance value (Rs) on the position of the microwave irradiation port. When the wafer 200 containing the amorphous P-Doped Si film having the structure of FIG. 13 is subjected to microwave irradiation (4 kW, 300 seconds, +9 kW, 45 seconds), a part of the amorphous P-Doped Si film is crystallized. However, uneven processing occurs.
反應室201的微波的照射口是形成如圖3般，但變更微波的照射口的照射位置，而處理非晶質P-Doped Si膜時的薄膜電阻值(Rs)的面內分佈的傾向是如圖14的MAP部分所示般，分別不同。The microwave irradiation port of the reaction chamber 201 is formed as shown in FIG. 3, but the irradiation position of the microwave irradiation port is changed, and the in-plane distribution of the sheet resistance value (Rs) when processing an amorphous P-Doped Si film is As shown in the MAP part of FIG. 14, each is different.
例如，將微波產生器655-2設為OFF，使用微波產生器655-1、655-3~655-6時，晶圓200的薄膜電阻值(Rs)的面內分佈是有晶圓200的中央附近的薄膜電阻值(Rs)高的傾向。這可思考晶圓200的中央附近的電磁場分佈弱的緣故。此情況的微波產生器655的照射口的照射位置是在圖3中為653-1、653-3、653-4、653-5、653-6。圖10的S94是利用此構成者。For example, when the microwave generator 655-2 is set to OFF and the microwave generators 655-1 and 655-3 to 655-6 are used, the in-plane distribution of the sheet resistance value (Rs) of the wafer 200 is that of the wafer 200. The sheet resistance value (Rs) near the center tends to be high. This may be considered because the electromagnetic field distribution near the center of the wafer 200 is weak. The irradiation positions of the irradiation ports of the microwave generator 655 in this case are 653-1, 653-3, 653-4, 653-5, and 653-6 in FIG. 3. S94 in FIG. 10 uses this component.
同樣，例如，將微波產生器655-5設為OFF，使用微波產生器655-1~655-4、655-6時，晶圓200的薄膜電阻值(Rs)的面內分佈是有晶圓200的外周附近(邊緣部)的薄膜電阻值(Rs)高的傾向。這可思考晶圓200的外周部的電磁場分佈弱的緣故。此情況的微波產生器655的照射口的照射位置是在圖3中為653-1、653-2、653-3、653-4、653-6。圖10的S93是利用此構成者。Similarly, for example, when the microwave generator 655-5 is set to OFF and the microwave generators 655-1 to 655-4 and 655-6 are used, the in-plane distribution of the sheet resistance value (Rs) of the wafer 200 is a wafer. The sheet resistance value (Rs) near the outer periphery (edge portion) of 200 tends to be high. This may be considered because the electromagnetic field distribution of the outer peripheral portion of the wafer 200 is weak. The irradiation positions of the irradiation ports of the microwave generator 655 in this case are 653-1, 653-2, 653-3, 653-4, and 653-6 in FIG. 3. S93 in FIG. 10 uses this component.
同樣，例如，將微波產生器655-6設為OFF，使用微波產生器655-1~655-5時，晶圓200的薄膜電阻值(Rs)的面內分佈是在面內中大致為均一，可思考晶圓200的面內的電磁場分佈大致均一。此情況的微波產生器655的照射口的照射位置是在圖3中為653-1、653-2、653-3、653-4、653-5。圖7的改質工程(S404)的昇溫期間及改質期間是利用此構成者。
(4)根據本實施形態的效果
若根據本實施形態，則可取得以下所示的1個或複數的效果。Similarly, for example, when the microwave generator 655-6 is set to OFF and the microwave generators 655-1 to 655-5 are used, the in-plane distribution of the sheet resistance value (Rs) of the wafer 200 is approximately uniform in the plane. It can be considered that the electromagnetic field distribution in the plane of the wafer 200 is substantially uniform. The irradiation positions of the irradiation ports of the microwave generator 655 in this case are 653-1, 653-2, 653-3, 653-4, and 653-5 in FIG. 3. This structure is used in the heating period and the modification period of the modification process (S404) in FIG. 7.
(4) Effects according to this embodiment According to this embodiment, one or a plurality of effects shown below can be obtained.
1)在可從反應室的上部往基板的邊緣部導入冷卻氣體的位置設置氣體導入口，在可從反應室的下部排除冷卻氣體的位置設置排氣口，朝邊緣部分供給冷卻氣體，使邊緣部的溫度形成比基板的中央部低。藉此，可使基板的面內溫度形成均一，因此可進行均一的基板處理。1) A gas introduction port is provided at a position where cooling gas can be introduced from the upper part of the reaction chamber to the edge of the substrate, and an exhaust port is provided at a position where cooling gas can be excluded from the lower part of the reaction chamber. The temperature of the portion is lower than that of the center portion of the substrate. Thereby, the in-plane temperature of the substrate can be made uniform, so that uniform substrate processing can be performed.
2)設置：產生微波的複數的微波產生器、及將此微波產生器所產生的微波照射至基板的複數的微波照射口，以基板內的電磁場強度為中央部比邊緣部更高的方式將複數的微波產生器的任一個設為OFF，變更微波照射口的位置。藉此，可使基板的面內溫度形成均一，因此可進行均一的基板處理。2) Setting: a plurality of microwave generators that generate microwaves, and a plurality of microwave irradiation ports that irradiate the microwaves generated by the microwave generator to the substrate, so that the intensity of the electromagnetic field in the substrate is higher in the central portion than in the edge portion Any one of the plurality of microwave generators is set to OFF, and the position of the microwave irradiation port is changed. Thereby, the in-plane temperature of the substrate can be made uniform, so that uniform substrate processing can be performed.
3)藉由組合上述1)及上述2)，可防止在微波照射的初期產生的基板的彎曲，且可使基板面內的溫度形成均一。3) By combining the above 1) and 2), it is possible to prevent the substrate from being warped at the initial stage of microwave irradiation, and to make the temperature in the substrate surface uniform.
4)對基板開始微波的供給，且開始冷卻氣體的供給，測定基板的中央部及邊緣部的溫度，當流邊緣部的溫度比中央部高時，以邊緣部的溫度變低的方式，(I)增加冷卻氣體的供給流量，且(II)以基板的電磁場強度成為預定的電磁場強度之方式，停止複數的微波產生器之中至少1個。4) Start the supply of microwaves to the substrate and start the supply of cooling gas. Measure the temperature of the center and edge of the substrate. When the temperature of the flow edge is higher than the temperature of the center, the temperature of the edge will become lower. I) Increase the supply flow of the cooling gas, and (II) Stop at least one of the plurality of microwave generators so that the electromagnetic field strength of the substrate becomes a predetermined electromagnetic field strength.
5)又，對基板開始微波的供給，且開始冷卻氣體的供給，測定基板的中央部及邊緣部的溫度，當中央部的溫度比邊緣部高時，以中央部的溫度變低之方式，(I)降低冷卻氣體的供給流量，且(II)以基板的電磁場強度成為預定的電磁場強度之方式，停止複數的微波產生器之中至少1個。5) The microwave supply to the substrate is started, and the cooling gas supply is started. The temperature of the central portion and the edge portion of the substrate is measured. When the temperature of the central portion is higher than the edge portion, the temperature of the central portion becomes lower. (I) reduce the supply flow of the cooling gas, and (II) stop at least one of the plurality of microwave generators so that the electromagnetic field strength of the substrate becomes a predetermined electromagnetic field strength.
6)藉由組合上述4)及上述5)來實施，可防止在微波照射的初期產生的基板的彎曲，且可使基板面內的溫度形成均一。藉此，可進行均一的基板處理。6) By combining the above 4) and 5), it is possible to prevent the substrate from being bent at the initial stage of microwave irradiation, and to make the temperature in the substrate surface uniform. Thereby, uniform substrate processing can be performed.
＜本發明的其他的實施形態＞
利用圖15來說明有關本發明的其他的實施形態的基板處理裝置。圖15所示的基板處理裝置100a與圖1所示的基板處理裝置100不同的點是作為氣體供給部更設有氣體供給管232a、質量流控制器(MFC)241a、開閉閥的閥243a及氣體導入口222a的點，及以包圍載置台210的方式設有排氣口221的點。其他的構成是與圖1同樣，因此說明省略。<Other embodiment of this invention>
A substrate processing apparatus according to another embodiment of the present invention will be described with reference to FIG. 15. The substrate processing apparatus 100a shown in FIG. 15 is different from the substrate processing apparatus 100 shown in FIG. 1 in that a gas supply pipe 232a, a mass flow controller (MFC) 241a, an on-off valve 243a, and A point of the gas introduction port 222 a and a point of the exhaust port 221 provided so as to surround the mounting table 210. The other configurations are the same as those in FIG. 1, and therefore descriptions thereof are omitted.
氣體導入口222a是與氣體導入口222同樣，以可供給冷卻氣體至晶圓200的邊緣部分之方式，被設在對應於凸緣蓋104的晶圓200的邊緣部的上部之處。從被設在反應室201的上部的氣體導入口222、222a往反應室201內供給的冷卻氣體是通過晶圓200的邊緣部及其附近，從以包圍載置台210的方式設置的排氣口221經由搬送空間203內來排出至排氣管231。The gas introduction port 222 a is provided in the upper part of the edge part of the wafer 200 corresponding to the flange cover 104 so that a cooling gas can be supplied to the edge part of the wafer 200 similarly to the gas introduction port 222. The cooling gas supplied from the gas introduction ports 222 and 222a provided in the upper part of the reaction chamber 201 into the reaction chamber 201 passes through the edge portion of the wafer 200 and its vicinity, and from an exhaust port provided so as to surround the mounting table 210. 221 is discharged to the exhaust pipe 231 through the transport space 203.
藉此，即使增多從氣體導入口222、222a供給的冷卻氣體的供給流量，也可從以包圍載置台210的方式設置的排氣口221迅速地排出。Thereby, even if the supply flow rate of the cooling gas supplied from the gas introduction ports 222 and 222a is increased, it can be quickly discharged from the exhaust port 221 provided so as to surround the mounting table 210.
如圖16所示般，本實施形態是構成為所謂縱型分批式的基板處理裝置，可多段地保持複數片基板於垂直方向。在晶舟217中，處理對象之被多段地保持於垂直方向的複數的晶圓200，及以夾入此複數的晶圓200的方式被載置於晶圓200的垂直方向上下之作為隔熱板的石英板101a、101b，以及加熱板1011a、1011b會以預定的間隔來保持。圖16是在此複數的晶圓200間未設有石英板101c的構成例。其他的構成是與圖1相同，省略其說明。將保持於晶舟217的晶圓200記載為3片，但不限於此，例如亦可處理25片或50片等多數片的晶圓200。As shown in FIG. 16, this embodiment is configured as a so-called vertical batch type substrate processing apparatus, and can hold a plurality of substrates in a vertical direction in multiple stages. In the wafer boat 217, a plurality of wafers 200 to be processed are held in a plurality of stages in the vertical direction, and the plurality of wafers 200 are sandwiched by the plurality of wafers 200. The quartz plates 101a, 101b of the plate, and the heating plates 1011a, 1011b are held at predetermined intervals. FIG. 16 is a configuration example in which a plurality of wafers 200 are not provided with a quartz plate 101c. The other configurations are the same as those in FIG. 1, and descriptions thereof are omitted. Although three wafers 200 held in the wafer boat 217 are described, the present invention is not limited to this. For example, a plurality of wafers 200 such as 25 or 50 wafers may be processed.
以上，按照實施形態來說明本發明，但上述的各實施形態或各變形例等是可適當組合使用，其效果也可取得。As mentioned above, although this invention was demonstrated based on embodiment, each said embodiment, each modification, etc. can be used in combination suitably, and the effect can also be acquired.
例如，在上述的各實施形態中，記載有關將非晶矽膜改質成多晶矽膜作為以矽作為主成分的膜的處理，但並非限於此，亦可使供給含有氧(O)、氮(N)、碳(C)、氫(H)之中至少1個以上的氣體，而改質被形成於晶圓200的表面的膜。例如，在晶圓200形成作為高介電質膜的鉿氧化膜(HfxOy膜)時，一邊供給含氧的氣體，一邊供給微波而使加熱，藉此補充鉿氧化膜中的欠缺的氧，可使高介電質膜的特性提升。For example, in each of the embodiments described above, the process of modifying an amorphous silicon film into a polycrystalline silicon film as a film containing silicon as a main component is described, but the invention is not limited to this, and the supply may include oxygen (O) and nitrogen ( N), carbon (C), and hydrogen (H), at least one of which is a modified film formed on the surface of the wafer 200. For example, when a hafnium oxide film (HfxOy film) as a high-dielectric film is formed on the wafer 200, the oxygen-containing gas is supplied, and the microwave is heated to supply the oxygen which is lacking in the hafnium oxide film. Improve the characteristics of high dielectric film.
另外，在此是顯示有關鉿氧化膜，但並非限於此，含有包括鋁(Al)、鈦(Ti)、鋯(Zr)、鉭(Ta)、鈮(Nb)、鑭(La)、鈰(Ce)、釔(Y)、鋇(Ba)、鍶(Sr)、鈣(Ca)、鉛(Pb)、鉬(Mo)、鎢(W)等的至少任一個的金屬元素的氧化膜，亦即在改質金屬系氧化膜的情況也可適用。亦即，上述的成膜順序是在晶圓200上，改質TiOCN膜、TiOC膜、TiON膜、TiO膜、ZrOCN膜、ZrOC膜、ZrON膜、ZrO膜、HfOCN膜、HfOC膜、HfON膜、HfO膜、TaOCN膜、TaOC膜、TaON膜、TaO膜、NbOCN膜、NbOC膜、NbON膜、NbO膜、AlOCN膜、AlOC膜、AlON膜、AlO膜、MoOCN膜、MoOC膜、MoON膜、MoO膜、WOCN膜、WOC膜、WON膜、WO膜的情況也可適用。In addition, here is shown a hafnium oxide film, but it is not limited thereto, and includes aluminum (Al), titanium (Ti), zirconium (Zr), tantalum (Ta), niobium (Nb), lanthanum (La), and cerium ( Ce), yttrium (Y), barium (Ba), strontium (Sr), calcium (Ca), lead (Pb), molybdenum (Mo), tungsten (W), etc. That is, the present invention is applicable even in the case of a modified metal-based oxide film. That is, the above-mentioned film formation sequence is on the wafer 200, modified TiOCN film, TiOC film, TiON film, TiO film, ZrOCN film, ZrOC film, ZrON film, ZrO film, HfOCN film, HfOC film, HfON film, HfO film, TaOCN film, TaOC film, TaON film, TaO film, NbOCN film, NbOC film, NbON film, NbO film, AlOCN film, AlOC film, AlON film, AlO film, MoOCN film, MoOC film, MoON film, MoO film , WOCN film, WOC film, WON film, and WO film are also applicable.
又，不限於高介電質膜，亦可使被摻雜雜質之以矽作為主成分的膜加熱。以矽作為主成分的膜是有矽氮化膜(SiN膜)、矽氧化膜(SiO膜)矽氧碳化膜(SiOC膜)、矽氧碳氮化膜(SiOCN膜)、矽氧氮化膜(SiON膜)等的Si系氧化膜。雜質是包含例如硼(B)、碳(C)、氮(N)、鋁(Al)、磷(P)、鎵(Ga)、砷(As)等的至少1個以上。Further, the film is not limited to a high-dielectric film, and a film containing silicon as a main component doped with impurities may be heated. Silicon-based films are mainly silicon nitride films (SiN films), silicon oxide films (SiO films), silicon oxycarbide films (SiOC films), silicon oxycarbonitride films (SiOCN films), and silicon oxynitride films. (SiON film) and other Si-based oxide films. The impurities include, for example, at least one of boron (B), carbon (C), nitrogen (N), aluminum (Al), phosphorus (P), gallium (Ga), and arsenic (As).
又，亦可以甲基丙烯酸甲酯樹脂(Polymethyl methacrylate：PMMA)、環氧樹脂、酚醛樹脂、聚乙烯醇苯基樹脂等的至少任一個作為基礎的抗蝕膜。Further, at least any one of a polymethyl methacrylate (PMMA) resin, an epoxy resin, a phenol resin, and a polyvinyl alcohol phenyl resin may be used as a base resist film.
又，上述是記載有關半導體裝置的製造工程之一工程，但不限於此，在液晶面板的製造工程的圖案化處理、太陽電池的製造工程的圖案化處理、或功率裝置的製造工程的圖案化處理等之處理基板的技術也可適用。
[產業上的利用可能性]In addition, the above is a description of a process related to a manufacturing process of a semiconductor device, but is not limited thereto. The patterning process in a manufacturing process of a liquid crystal panel, the patterning process in a manufacturing process of a solar cell, or the patterning process in a power device manufacturing process Techniques such as processing a substrate are also applicable.
[Industrial availability]
如以上所述般，若根據本發明，則可提供一種可抑制基板的變形或破損，進行均一的基板處理之電磁波熱處理技術。As described above, according to the present invention, it is possible to provide an electromagnetic wave heat treatment technology capable of suppressing deformation or breakage of a substrate and performing uniform substrate processing.
101a、101b‧‧‧石英板(石英板)101a, 101b‧‧‧Quartz Plate (Quartz Plate)
121‧‧‧控制器(控制部) 121‧‧‧ Controller (Control Department)
200‧‧‧晶圓(基板) 200‧‧‧ wafer (substrate)
201‧‧‧處理室 201‧‧‧Processing Room
221‧‧‧排氣口 221‧‧‧ exhaust port
222‧‧‧氣體導入口 222‧‧‧Gas inlet
263‧‧‧溫度感測器 263‧‧‧Temperature sensor
655‧‧‧微波產生器 655‧‧‧microwave generator
圖1是在本發明的一實施形態所適用的基板處理裝置的單片型處理爐的概略構成圖，以縱剖面圖來表示處理爐部分的圖。FIG. 1 is a schematic configuration diagram of a single-wafer processing furnace of a substrate processing apparatus to which an embodiment of the present invention is applied, and illustrates a processing furnace portion in a longitudinal sectional view.
圖2是表示在本發明的一實施形態所適用的基板處理裝置的溫度測定方法的圖，測定加熱板的溫度時的圖。 FIG. 2 is a diagram showing a temperature measurement method of a substrate processing apparatus to which an embodiment of the present invention is applied, and is a diagram when measuring the temperature of a heating plate.
圖3是表示在圖1的基板處理裝置中，在處理箱設置6個電磁波導入埠時的電磁波供給部的構成例的圖。 FIG. 3 is a diagram showing a configuration example of an electromagnetic wave supply section when six electromagnetic wave introduction ports are provided in a processing box in the substrate processing apparatus of FIG. 1.
圖4是圖3的處理箱的上視圖。 FIG. 4 is a top view of the processing box of FIG. 3.
圖5是圖3的處理箱的側面圖。 FIG. 5 is a side view of the processing box of FIG. 3.
圖6是在本發明所適用的基板處理裝置的控制器的概略構成圖。 FIG. 6 is a schematic configuration diagram of a controller of a substrate processing apparatus to which the present invention is applied.
圖7是表示本發明的基板處理的流程的圖。 FIG. 7 is a diagram showing a flow of substrate processing according to the present invention.
圖8是在本發明的一實施形態所適用的基板處理裝置的實施例1的溫度控制方法之一例的圖。 8 is a diagram showing an example of a temperature control method of the first embodiment of the substrate processing apparatus to which the embodiment of the present invention is applied.
圖9是在本發明的一實施形態所適用的基板處理裝置的實施例2的溫度控制方法之一例的圖。 FIG. 9 is a diagram showing an example of a temperature control method of a second embodiment of a substrate processing apparatus to which an embodiment of the present invention is applied.
圖10是用以說明在本發明的一實施形態所適用的基板處理裝置的實施例3的控制流程的圖。 FIG. 10 is a diagram for explaining a control flow of a third embodiment of a substrate processing apparatus to which an embodiment of the present invention is applied.
圖11是表示用在本發明的一實施形態之照射微波時的基板與隔熱板的溫度推移之一例的圖。 FIG. 11 is a diagram showing an example of temperature transitions of a substrate and a heat insulating plate used in the microwave irradiation according to an embodiment of the present invention.
圖12是表示用在本發明的一實施形態的基板的微波的吸收率與微波的反射率的溫度依存性的圖。 FIG. 12 is a graph showing the temperature dependence of microwave absorptivity and microwave reflectance used in a substrate according to an embodiment of the present invention.
圖13是用在本發明的一實施形態的處理樣品的剖面圖。 13 is a cross-sectional view of a processed sample used in an embodiment of the present invention.
圖14是表示用在本發明的一實施形態的處理樣品的薄膜電阻值的面內分佈之與微波照射口的位置依存性的圖。 FIG. 14 is a graph showing the dependence of the in-plane distribution of the sheet resistance value of a processed sample used in an embodiment of the present invention on the position of the microwave irradiation port.
圖15是在本發明的其他的實施形態所適用的基板處理裝置的單片型處理爐的概略構成圖，以縱剖面圖來表示處理爐部分的圖。 FIG. 15 is a schematic configuration diagram of a single-piece processing furnace of a substrate processing apparatus to which another embodiment of the present invention is applied, and illustrates a processing furnace portion in a longitudinal sectional view.
圖16是以縱剖面圖來表示在本發明的其他的實施形態所適用的基板處理裝置的處理爐部分的圖。 FIG. 16 is a longitudinal sectional view showing a processing furnace portion of a substrate processing apparatus to which another embodiment of the present invention is applied.
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