TW201933945A - Method for manufacturing light emitting unit - Google Patents
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Abstract
Description
本發明是有關於一種發光單元，且特別是有關於一種發光單元的製作方法。The present invention relates to a light emitting unit, and more particularly to a method of fabricating a light emitting unit.
一般而言，由多個發光二極體晶片所組成的發光單元於線路基板上的串並聯控制，是在線路基板進行線路佈局設計時，依照電源供應器所能提供的電壓值及電流值藉由串並聯方式就已經規劃完成。然而，發光二極體晶片的種類眾多，意即每一發光二極體晶片所需的電壓值與電流值皆不同，因此當發光單元配置於線路基板上時，除了不容易得到最好的發光效果外，亦會因修改線路佈局而影響線路基板的美觀及成本考量。In general, the series-parallel control of the light-emitting unit composed of a plurality of light-emitting diode chips on the circuit substrate is based on the voltage value and current value that the power supply can provide when the circuit substrate is designed. It has been planned by series and parallel. However, there are many types of light-emitting diode chips, that is, the voltage values and current values required for each light-emitting diode chip are different, so when the light-emitting unit is disposed on the circuit substrate, the best light is not easily obtained. In addition to the effect, the appearance and cost considerations of the circuit substrate will also be affected by modifying the layout of the circuit.
舉例來說，若線路基板的線路佈局之初始設計為四串一並的電路設計，當進行轉換效率測試需將初始設計修改成二串二並的電路設計時，由於線路佈局完成之後是無法進行串並聯修改，因此需藉由跳線、斷線或重新製作規劃線路佈局的方式，才能達到所需的串並聯設計，此不僅增加製作成本，也增加製作時間。For example, if the initial layout of the circuit board layout is a four-string circuit design, when the conversion efficiency test needs to be modified into a two-string circuit design, it cannot be performed after the line layout is completed. The serial-parallel modification is made, so the required serial-parallel design can be achieved by jumper, disconnection or re-planning the layout of the circuit, which not only increases the production cost but also increases the production time.
本發明提供一種具有選擇性地透過切割程序而形成不同串聯、並聯或串並聯迴路的發光單元的製作方法。The present invention provides a method of fabricating a light-emitting unit that selectively passes through a cutting process to form different series, parallel or series-parallel loops.
本發明的發光單元的製作方法，其包括以下步驟。提供一基板。在基板上形成一樹脂層。提供多個發光晶粒貼附於樹脂層上，每一發光晶粒具有位於同一側的多個電極。樹脂層至少覆蓋每一發光晶粒的一表面且暴露出該些電極。形成一圖案化導電層，且圖案化導電層連接每一晶粒的該些電極。進行一切割程序以形成至少一發光單元，其中發光單元包括基板的一部分、樹脂層的一部分以及一至多個發光晶粒。提供設置有一圖案化電路層的一電路載板，其中圖案化導電層對應設置於圖案化電路層上，以使在發光單元中的一至多個發光晶粒藉由圖案化導電層而與圖案化電路層電性連接。A method of fabricating a light-emitting unit of the present invention includes the following steps. A substrate is provided. A resin layer is formed on the substrate. A plurality of light emitting dies are provided to be attached to the resin layer, each of the light emitting grains having a plurality of electrodes on the same side. The resin layer covers at least one surface of each of the light-emitting dies and exposes the electrodes. A patterned conductive layer is formed, and the patterned conductive layer connects the electrodes of each die. A cutting process is performed to form at least one light emitting unit, wherein the light emitting unit includes a portion of the substrate, a portion of the resin layer, and one or more light emitting grains. Providing a circuit carrier provided with a patterned circuit layer, wherein the patterned conductive layer is correspondingly disposed on the patterned circuit layer, so that one or more light emitting dies in the light emitting unit are patterned and patterned by the patterned conductive layer The circuit layer is electrically connected.
本發明的發光單元的製作方法，其包括以下步驟。提供一半導體結構，其包括多個彼此分離的發光晶粒，其中每一發光晶粒包括一發光元件、一第一電極以及一第二電極，而第一電極與第二電極配置於發光元件的同一側，且第一電極與第二電極之間具有一間隔。形成一封裝膠體以包覆發光晶粒，其中封裝膠體包覆每一發光晶粒的發光元件，而暴露出每一發光晶粒的第一電極與第二電極。形成一圖案化金屬層於發光晶粒的第一電極與第二電極上，其中圖案化金屬層與發光晶粒的第一電極與第二電極直接接觸，並由第一電極與第二電極延伸至封裝膠體上。提供一基板，其中封裝膠體位於基板與發光晶粒的發光元件之間。進行一切割程序，以切割半導體結構、圖案化金屬層、封裝膠體以及基板，而至少定義出一具有一串聯迴路、一並聯迴路或一串並聯迴路的發光單元。A method of fabricating a light-emitting unit of the present invention includes the following steps. A semiconductor structure is provided, comprising a plurality of light-emitting dies separated from each other, wherein each of the light-emitting dies comprises a light-emitting element, a first electrode and a second electrode, and the first electrode and the second electrode are disposed on the light-emitting element On the same side, and there is a gap between the first electrode and the second electrode. An encapsulant is formed to encapsulate the luminescent dies, wherein the encapsulant encapsulates the illuminating elements of each of the illuminating dies to expose the first and second electrodes of each of the illuminating dies. Forming a patterned metal layer on the first electrode and the second electrode of the light emitting die, wherein the patterned metal layer and the first electrode of the light emitting die are in direct contact with the second electrode, and are extended by the first electrode and the second electrode To the encapsulant. A substrate is provided, wherein the encapsulant is located between the substrate and the light emitting elements of the light emitting dies. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the encapsulant, and the substrate, and at least one light-emitting unit having a series circuit, a parallel circuit, or a series of parallel circuits is defined.
在本發明的一實施例中，上述的封裝膠體內摻雜有一螢光材料，且螢光材料包括黃色螢光粉、紅色螢光粉、綠色螢光粉、藍色螢光粉、釔鋁石榴石螢光粉或上述材料之組合。In an embodiment of the invention, the package body is doped with a fluorescent material, and the fluorescent material comprises yellow phosphor powder, red phosphor powder, green phosphor powder, blue phosphor powder, and yttrium aluminum pomegranate. Stone fluorite or a combination of the above materials.
在本發明的一實施例中，上述的發光單元包括至少兩個發光晶粒，一發光晶粒的第一電極透過圖案化金屬層而電性連接至另一發光晶粒的第二電極，而形成具有串聯迴路的發光單元。In an embodiment of the invention, the light emitting unit includes at least two light emitting crystal grains, and the first electrode of one light emitting crystal grain is electrically connected to the second electrode of the other light emitting crystal grain through the patterned metal layer, and A light emitting unit having a series circuit is formed.
在本發明的一實施例中，上述的發光單元包括至少兩個發光晶粒，一發光晶粒的第一電極透過圖案化金屬層而電性連接至另一發光晶粒的第一電極，且一發光晶粒的第二電極透過圖案化金屬層而電性連接至另一發光晶粒的第二電極，而形成具有並聯迴路的發光單元。In an embodiment of the invention, the light emitting unit includes at least two light emitting crystal grains, and the first electrode of one light emitting die is electrically connected to the first electrode of the other light emitting die through the patterned metal layer, and A second electrode of a light-emitting die is electrically connected to the second electrode of the other light-emitting die through the patterned metal layer to form a light-emitting unit having a parallel loop.
在本發明的一實施例中，上述的發光單元包括至少四個發光晶粒，一發光晶粒的第一電極透過圖案化金屬層而電性連接至另一發光晶粒的第一電極，而一發光晶粒的第二電極與另一發光晶粒的第二電極透過圖案化金屬層而電性連接至又一發光晶粒的第一電極以及再一發光晶粒的第一電極，且又一發光晶粒的第二電極透過圖案化金屬層而電性連接至再一發光晶粒的第二電極，而形成具有串並聯迴路的發光單元。In an embodiment of the invention, the light emitting unit includes at least four light emitting crystal grains, and the first electrode of one light emitting crystal grain is electrically connected to the first electrode of the other light emitting crystal grain through the patterned metal layer, and The second electrode of one of the light-emitting crystal grains and the second electrode of the other light-emitting die are electrically connected to the first electrode of the further light-emitting die and the first electrode of the further light-emitting die through the patterned metal layer, and A second electrode of a light-emitting die is electrically connected to the second electrode of the further light-emitting die through the patterned metal layer to form a light-emitting unit having a series-parallel loop.
在本發明的一實施例中，上述的圖案化金屬層的材質與每一發光晶粒的第一電極與第二電極的材質相同。In an embodiment of the invention, the material of the patterned metal layer is the same as the material of the first electrode and the second electrode of each of the light-emitting dies.
在本發明的一實施例中，上述的圖案化金屬層的材質與每一發光晶粒的第一電極與第二電極的材質不同。In an embodiment of the invention, the material of the patterned metal layer is different from the material of the first electrode and the second electrode of each of the light-emitting dies.
在本發明的一實施例中，更包括：提供一外部電路，配置於發光單元的下方，發光單元透過圖案化金屬層與外部電路電性連接。In an embodiment of the invention, the method further includes: providing an external circuit disposed under the light emitting unit, wherein the light emitting unit is electrically connected to the external circuit through the patterned metal layer.
在本發明的一實施例中，上述的外部電路包括一承載板、一配置於承載板上的第一外部接點與一配置於承載板上的第二外部接點。發光單元透過圖案化金屬層分別和第一外部接點與第二外部接點電性連接。In an embodiment of the invention, the external circuit includes a carrier board, a first external contact disposed on the carrier board, and a second external contact disposed on the carrier board. The light emitting unit is electrically connected to the first external contact and the second external contact through the patterned metal layer.
在本發明的一實施例中，上述的外部電路包括一承載板和一對應圖案化金屬層且配置於承載板上的圖案化線路層，發光單元透過圖案化金屬層與圖案化線路層電性連接。In an embodiment of the invention, the external circuit includes a carrier board and a patterned circuit layer corresponding to the patterned metal layer and disposed on the carrier board, and the light emitting unit transmits the patterned metal layer and the patterned circuit layer. connection.
在本發明的一實施例中，上述的圖案化金屬層與圖案化線路層共形地對應配置。In an embodiment of the invention, the patterned metal layer is conformally disposed in correspondence with the patterned circuit layer.
在本發明的一實施例中，更包括：提供一散熱件，配置於發光單元與外部電路之間。In an embodiment of the invention, the method further includes: providing a heat dissipating member disposed between the light emitting unit and the external circuit.
在本發明的一實施例中，上述的基板的材質包括玻璃、陶瓷或藍寶石。In an embodiment of the invention, the material of the substrate comprises glass, ceramic or sapphire.
基於上述，本發明是進行切割程序，以切割半導體結構、圖案化金屬層、封裝膠體以及基板，而定義出具有串聯迴路、並聯迴路或串並聯迴路的發光單元。因此，使用者可依據使用需求而自行選擇切割區域，而形成不同電路迴路設計。故，本發明的發光單元的製作方法可讓使用者具有較佳製作上的靈活度，且所形成的發光單元可具有多種不同態樣的電路迴路設計。Based on the above, the present invention performs a cutting process for cutting a semiconductor structure, a patterned metal layer, an encapsulant, and a substrate to define a light-emitting unit having a series circuit, a parallel circuit, or a series-parallel circuit. Therefore, the user can select the cutting area according to the use requirements, and form different circuit loop designs. Therefore, the manufacturing method of the light-emitting unit of the present invention allows the user to have better flexibility in production, and the formed light-emitting unit can have a plurality of different circuit circuit designs.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.
圖1至圖5繪示為本發明的一實施例的一種發光單元的製作方法的示意圖。為了方便說明起見，圖1及圖3繪示為本發明的一實施例的一種半導體結構110的俯視示意圖；圖2繪示為沿圖1的線A-A的剖面示意圖；圖4繪示為沿圖3的線B-B的剖面示意圖；圖5繪示為沿圖3的切割區域C切割半導體結構110後沿線C’-C’的剖面示意圖。FIG. 1 to FIG. 5 are schematic diagrams showing a method of fabricating a light emitting unit according to an embodiment of the invention. FIG. 1 and FIG. 3 are schematic top views of a semiconductor structure 110 according to an embodiment of the present invention; FIG. 2 is a cross-sectional view along line AA of FIG. 1; 3 is a schematic cross-sectional view of line BB of FIG. 3; FIG. 5 is a cross-sectional view of line C'-C' taken along the cutting area C of FIG.
請先同時參考圖1及圖2，依照本實施例的發光單元的製作方法，首先，提供一半導體結構110，其包括多個彼此分離的發光晶粒120，其中每一發光晶粒120包括一發光元件122、一第一電極124以及一第二電極126，而第一電極124與第二電極126配置於發光元件122的同一側，且第一電極124與第二電極126之間具有一間隔G。此處，如圖2所示，本實施例的第一電極124與第二電極126實質上為共平面的設計，但並不以此為限。其中，每一發光晶粒120的發光元件122可包括一基材(未繪示)，以及依序配置於基材上的一第一型半導體層(未繪示)、一發光層(未繪示)以及一第二型半導體層(未繪示)，但並不以此為限。且每一發光晶粒120可為相同或不同光色，端視實際設計需求。第一電極124與第一型半導體層(未繪示)直接接觸且電性連接。第二電極126與第二型半導體層(未繪示)直接接觸且電性連接。Referring to FIG. 1 and FIG. 2 simultaneously, in accordance with the method for fabricating the light emitting unit of the present embodiment, first, a semiconductor structure 110 is provided, which includes a plurality of light emitting dies 120 separated from each other, wherein each of the light emitting dies 120 includes a The light emitting element 122, a first electrode 124 and a second electrode 126, and the first electrode 124 and the second electrode 126 are disposed on the same side of the light emitting element 122, and the first electrode 124 and the second electrode 126 have a space therebetween. G. Here, as shown in FIG. 2, the first electrode 124 and the second electrode 126 of the present embodiment are substantially coplanar, but are not limited thereto. The light-emitting element 122 of each of the light-emitting dies 120 may include a substrate (not shown), and a first-type semiconductor layer (not shown) and a light-emitting layer (not shown) sequentially disposed on the substrate. And a second type of semiconductor layer (not shown), but not limited thereto. And each of the light-emitting dies 120 can be the same or different light colors, depending on actual design requirements. The first electrode 124 is in direct contact with and electrically connected to the first type semiconductor layer (not shown). The second electrode 126 is in direct contact with and electrically connected to the second type semiconductor layer (not shown).
接著，請再參考圖1與圖2，形成一封裝膠體130以包覆發光晶粒120，其中封裝膠體130包覆每一發光晶粒120的發光元件122，而暴露出至少部分每一發光晶粒120的第一電極124與第二電極126。Next, referring to FIG. 1 and FIG. 2, an encapsulant 130 is formed to cover the illuminating die 120, wherein the encapsulant 130 covers the illuminating element 122 of each illuminating die 120 to expose at least a portion of each illuminating crystal. The first electrode 124 and the second electrode 126 of the particle 120.
接著，請參考圖3，形成一圖案化金屬層140於發光晶粒120的第一電極124與第二電極126上，其中圖案化金屬層140與發光晶粒120的第一電極124與第二電極126直接接觸，並由第一電極124與第二電極126延伸至封裝膠體130上。需說明的是，本實施例的圖案化金屬層140的材質可與每一發光晶粒120的第一電極124與第二電極126的材質可相同，其中圖案化金屬層140的材質與每一發光晶粒120的第一電極124與第二電極126的材質可例如是鉑(Pt)、金(Au)、銀(Ag)、鎳(Ni)、鈦(Ti)、銦(In)、錫(Sn)、鉍(Bi)、上述材料之合金或上述材料之組合；或者是，圖案化金屬層140的材質與每一發光晶粒120的第一電極124與第二電極126的材質可不同，其中圖案化金屬層140的材質例如是鉑、金、銀、鎳、鈦、銦、錫、鉍、上述材料之合金或上述材料之組合，而每一發光晶粒120的第一電極124與第二電極126的材質例如是鉑、金、銦、錫、鉍、上述材料之合金或上述材料之組合。Next, referring to FIG. 3, a patterned metal layer 140 is formed on the first electrode 124 and the second electrode 126 of the light emitting die 120, wherein the patterned metal layer 140 and the first electrode 124 and the second electrode of the light emitting die 120 are formed. The electrode 126 is in direct contact and extends from the first electrode 124 and the second electrode 126 onto the encapsulant 130. It should be noted that the material of the patterned metal layer 140 of the present embodiment may be the same as the material of the first electrode 124 and the second electrode 126 of each of the light-emitting dies 120, wherein the material of the patterned metal layer 140 and each The material of the first electrode 124 and the second electrode 126 of the light-emitting die 120 may be, for example, platinum (Pt), gold (Au), silver (Ag), nickel (Ni), titanium (Ti), indium (In), tin. (Sn), bismuth (Bi), an alloy of the above materials or a combination of the above materials; or, the material of the patterned metal layer 140 and the material of the first electrode 124 and the second electrode 126 of each of the luminescent crystal grains 120 may be different. The material of the patterned metal layer 140 is, for example, platinum, gold, silver, nickel, titanium, indium, tin, antimony, an alloy of the above materials or a combination of the above materials, and the first electrode 124 of each of the luminescent crystal grains 120 is The material of the second electrode 126 is, for example, platinum, gold, indium, tin, antimony, an alloy of the above materials, or a combination of the above materials.
之後，請參考圖4，提供一基板150，其中封裝膠體130位於基板150與發光晶粒120的發光元件122之間。此處，本實施例基板150的材質例如是玻璃、壓克力、陶瓷、藍寶石或其他透光材質，其目的在於支撐半導體結構110，且有助於發光晶粒120的出光與導光效果。較佳的，基板150的材質是玻璃，易切割的特性可使製程更為簡易。Thereafter, referring to FIG. 4 , a substrate 150 is provided in which the encapsulant 130 is located between the substrate 150 and the light emitting elements 122 of the light emitting die 120 . Here, the material of the substrate 150 of the present embodiment is, for example, glass, acryl, ceramic, sapphire or other light-transmitting material, and the purpose thereof is to support the semiconductor structure 110 and contribute to the light-emitting and light-guiding effects of the light-emitting die 120. Preferably, the material of the substrate 150 is glass, and the easy-cutting property makes the process easier.
最後，請同時參考圖3與圖5，進行一切割程序，以切割半導體結構120、圖案化金屬層140、封裝膠體130以及基板150，而至少定義出一具有一串聯迴路、一並聯迴路或一串並聯迴路的發光單元100a。詳細來說，本實施例的切割程序是沿著圖3中的切割區域C來進行切割，此時所形成的發光單元100a包括至少兩個發光晶粒（圖5中示意地繪示四個發光晶粒，且為了方便說明起見，分別標示為120a、120b、120c、120d）。發光晶粒120a的第一電極124透過圖案化金屬層140而電性連接至發光晶粒120b的第二電極126；發光晶粒120b的第一電極124透過圖案化金屬層140而電性連接至發光晶粒120c的第二電極126，發光晶粒120c的第一電極124透過圖案化金屬層140而電性連接至發光晶粒120d的第二電極126，而形成具有串聯迴路（即四串）的發光單元100a。Finally, please refer to FIG. 3 and FIG. 5 simultaneously to perform a cutting process for cutting the semiconductor structure 120, the patterned metal layer 140, the encapsulant 130, and the substrate 150, and at least defining a series circuit, a parallel circuit or a The light emitting unit 100a of the series and parallel circuits. In detail, the cutting process of the present embodiment is performed along the cutting area C in FIG. 3, and the light-emitting unit 100a formed at this time includes at least two light-emitting dies (four illuminates are schematically illustrated in FIG. 5). Grains, and for convenience of description, are designated 120a, 120b, 120c, 120d), respectively. The first electrode 124 of the light-emitting die 120a is electrically connected to the second electrode 126 of the light-emitting die 120b through the patterned metal layer 140. The first electrode 124 of the light-emitting die 120b is electrically connected to the patterned metal layer 140. The second electrode 126 of the light-emitting die 120c, the first electrode 124 of the light-emitting die 120c is electrically connected to the second electrode 126 of the light-emitting die 120d through the patterned metal layer 140, and is formed to have a series circuit (ie, four strings). Light emitting unit 100a.
雖然上述切割後是形成具有串聯迴路（即四串）的發光單元100a，但於其他實施例中，亦可透過使用者的需求而自行變更切割區域而形成不同電路迴路的發光單元。Although the light-emitting unit 100a having a series circuit (ie, four strings) is formed after the above-described cutting, in other embodiments, the light-emitting unit of different circuit circuits may be formed by changing the cutting area by the user's request.
舉例來說，請同時參考圖3與圖6，其中圖6繪示為沿圖3的切割區域D切割後沿線D’-D’的剖面示意圖。本實施例的切割程序是沿著圖3中的切割區域D來進行切割，此時所形成的發光單元100b包括至少兩個發光晶粒（圖6中示意地繪示三個發光晶粒，且為了方便說明起見，分別標示為120e、120f、120g）。發光晶粒120e的第一電極124、發光晶粒120f的第一電極124以及發光晶粒120g的第一電極124透過圖案化金屬層140而彼此電性連接，且發光晶粒120e的第二電極126、發光晶粒120f的第二電極126以及發光晶粒120g的第二電極126透過圖案化金屬層140而彼此電性連接，而形成具有並聯迴路（即三並）的發光單元100b。For example, please refer to FIG. 3 and FIG. 6 at the same time, wherein FIG. 6 is a cross-sectional view along the line D'-D' after being cut along the cutting area D of FIG. 3. The cutting process of the present embodiment is performed along the cutting area D in FIG. 3, and the light emitting unit 100b formed at this time includes at least two light emitting crystal grains (three light emitting crystal grains are schematically illustrated in FIG. 6 , and For convenience of explanation, they are labeled as 120e, 120f, and 120g, respectively. The first electrode 124 of the light-emitting die 120e, the first electrode 124 of the light-emitting die 120f, and the first electrode 124 of the light-emitting die 120g are electrically connected to each other through the patterned metal layer 140, and the second electrode of the light-emitting die 120e 126. The second electrode 126 of the light emitting die 120f and the second electrode 126 of the light emitting die 120g are electrically connected to each other through the patterned metal layer 140 to form a light emitting unit 100b having a parallel circuit (ie, triple).
或者是，請同時參考圖3、圖7A與圖7B，其中圖7A與圖7B繪示為沿圖3的切割區域E切割後的剖面示意圖，而圖7A是沿圖3的線I-I的剖面示意圖，且圖7B是沿圖3的線II-II的剖面示意圖。本實施例的切割程序是沿著圖3中的切割區域E來進行切割，此時所形成的發光單元100c包括至少四個發光晶粒（圖3的切割區域E中示意地繪示四個發光晶粒，且為了方便說明起見，分別標示為120h、120i、120j、120k）。發光晶粒120h的第二電極126透過圖案化金屬層140而電性連接至發光晶粒120k的第二電極126（請參考圖3與圖7B），而發光晶粒120h的第一電極124與發光晶粒120k的第一電極124透過圖案化金屬層140而電性連接至120i發光晶粒的第二電極126以及發光晶粒120j的第二電極126（請參考圖3與圖7A），且發光晶粒120i的第一電極124透過圖案化金屬層140而電性連接至發光晶粒120j的第一電極124，而形成具有串並聯迴路（即兩串兩並）的發光單元100c。Alternatively, please refer to FIG. 3, FIG. 7A and FIG. 7B simultaneously, wherein FIG. 7A and FIG. 7B are schematic cross-sectional views taken along the cutting area E of FIG. 3, and FIG. 7A is a cross-sectional view along line II of FIG. And FIG. 7B is a schematic cross-sectional view taken along line II-II of FIG. The cutting process of the present embodiment is performed along the cutting area E in FIG. 3, and the light-emitting unit 100c formed at this time includes at least four light-emitting crystal grains (four light-emitting lights are schematically illustrated in the cutting area E of FIG. 3). Grains, and for convenience of description, are designated as 120h, 120i, 120j, 120k). The second electrode 126 of the light-emitting die 120h is electrically connected to the second electrode 126 of the light-emitting die 120k through the patterned metal layer 140 (please refer to FIG. 3 and FIG. 7B), and the first electrode 124 of the light-emitting die 120h is The first electrode 124 of the light emitting die 120k is electrically connected to the second electrode 126 of the 120i light emitting die and the second electrode 126 of the light emitting die 120j through the patterned metal layer 140 (please refer to FIG. 3 and FIG. 7A), and The first electrode 124 of the light-emitting die 120i is electrically connected to the first electrode 124 of the light-emitting die 120j through the patterned metal layer 140 to form a light-emitting unit 100c having a series-parallel loop (ie, two strings).
於其他未繪示的實施例中，本領域的技術人員當可參照前述實施例的說明，依據實際需求，而自行選擇在半導體結構110上的切割區域，而形成所需的電路迴路（如兩串三並、四串一並等）的發光單元。In other embodiments not shown, those skilled in the art can select the cutting area on the semiconductor structure 110 according to the actual requirements, and form the required circuit loop (such as two). A light-emitting unit of three strings, four strings, and the like.
此外，值得注意的是，本實施例的圖案化金屬層140是覆蓋於發光晶粒120的第一電極124與第二電極126上且延伸至部分封裝膠體130上。也就是說，圖案化金屬層140可增加發光晶粒120的第一電極124與第二電極126的接觸面積，有利於切割後所形成的發光單元100a、100b、100c與外部電路進行組裝，可有效提高對位精準度及組裝效率。In addition, it is noted that the patterned metal layer 140 of the present embodiment covers the first electrode 124 and the second electrode 126 of the light emitting die 120 and extends onto the partial encapsulant 130. In other words, the patterned metal layer 140 can increase the contact area between the first electrode 124 and the second electrode 126 of the light-emitting die 120, and facilitate the assembly of the light-emitting units 100a, 100b, and 100c formed after cutting with an external circuit. Effectively improve alignment accuracy and assembly efficiency.
另外，請參考圖8，其中圖8繪示為本發明之另一實施例的一種發光單元的剖面示意圖。本實施例的發光單元100d與圖5的發光單元100a相似，惟二者主要差異之處在於：本實施例為了改變發光單元100d所提供的發光顏色，因此於封裝膠體130內摻雜有一螢光材料132，其中螢光材料132例如是黃色螢光粉、紅色螢光粉、綠色螢光粉、藍色螢光粉、釔鋁石榴石螢光粉或上述材料之組合。In addition, please refer to FIG. 8 , which is a cross-sectional view of a light emitting unit according to another embodiment of the present invention. The light-emitting unit 100d of the present embodiment is similar to the light-emitting unit 100a of FIG. 5, but the main difference between the two is that the light-emitting color provided by the light-emitting unit 100d is changed in the present embodiment, so that the packaged body 130 is doped with a fluorescent light. The material 132, wherein the fluorescent material 132 is, for example, yellow phosphor powder, red phosphor powder, green phosphor powder, blue phosphor powder, yttrium aluminum garnet phosphor powder or a combination thereof.
圖9繪示為本發明的又一實施例的一種發光單元的剖面示意圖。請參考圖9，本實施例的發光單元100e的製作方法更包括提供一外部電路160，其中外部電路160配置於發光單元100e的下方，且發光單元100e透過圖案化金屬層140與外部電路160電性連接。舉例來說，本實施例的外部電路160例如是一線路基板，其包括一承載板162、一第一外部接點164a與一第二外部接點164b。更詳細的說，發光單元100e透過圖案化金屬層140分別和第一外部接點164a與第二外部接點164b電性連接。由於發光晶粒120a、120b、120c和120d已透過圖案化金屬層140電性連接，因此僅需於外部電路160的第一外部接點164a與第二外部接點164b分別通上正電及負電後，即可驅動發光單元100e而產生光線，也不用另外再於外部電路160上佈局電路，可具有較佳的使用彈性。FIG. 9 is a cross-sectional view showing a light emitting unit according to still another embodiment of the present invention. Referring to FIG. 9, the manufacturing method of the light emitting unit 100e of the present embodiment further includes providing an external circuit 160, wherein the external circuit 160 is disposed under the light emitting unit 100e, and the light emitting unit 100e is electrically connected to the external circuit 160 through the patterned metal layer 140. Sexual connection. For example, the external circuit 160 of the present embodiment is, for example, a circuit substrate including a carrier board 162, a first external contact 164a and a second external contact 164b. In more detail, the light emitting unit 100e is electrically connected to the first external contact 164a and the second external contact 164b through the patterned metal layer 140, respectively. Since the illuminating dies 120a, 120b, 120c, and 120d are electrically connected through the patterned metal layer 140, only the first external contact 164a and the second external contact 164b of the external circuit 160 need to be positively and negatively charged, respectively. Thereafter, the light-emitting unit 100e can be driven to generate light, and the circuit can be disposed on the external circuit 160 without further flexibility.
特別的是，如圖10所示，於另一實施例中，發光單元100f更可以包括一散熱件166，其中散熱件166配置於發光單元100f與外部電路160之間，可有效增加的散熱效率，但並不以此為限。In particular, as shown in FIG. 10, in another embodiment, the light emitting unit 100f may further include a heat sink 166, wherein the heat sink 166 is disposed between the light emitting unit 100f and the external circuit 160, which can effectively increase the heat dissipation efficiency. , but not limited to this.
圖11繪示為本發明的更一實施例的一種發光單元的剖面示意圖。請同時參考圖9和圖11，本實施例的發光單元100g與圖9實施例的發光單元100e相異之處在於：本實施例的外部電路160’包括一承載板162和一對應圖案化金屬層140且配置於承載板162上的圖案化線路層168，而發光單元100g透過圖案化金屬層140與圖案化線路層168電性連接。較佳地，其中圖案化金屬層140與圖案化線路層168共形地對應配置於承載板162上，可具有較大的散熱面積和對位面積，但並不以此為限。FIG. 11 is a cross-sectional view showing a light emitting unit according to a further embodiment of the present invention. Referring to FIG. 9 and FIG. 11 simultaneously, the light emitting unit 100g of the present embodiment is different from the light emitting unit 100e of the embodiment of FIG. 9 in that the external circuit 160' of the present embodiment includes a carrier board 162 and a corresponding patterned metal. The layer 140 is disposed on the patterned wiring layer 168 on the carrier 162, and the light emitting unit 100g is electrically connected to the patterned wiring layer 168 through the patterned metal layer 140. Preferably, the patterned metal layer 140 and the patterned circuit layer 168 are disposed on the carrier board 162 in a conformal manner, and may have a larger heat dissipation area and a matching area, but are not limited thereto.
綜上所述，本發明是一進行切割程序，以切割半導體結構、圖案化金屬層、封裝膠體以及基板，而定義出具有串聯迴路、並聯迴路或串並聯迴路的發光單元。因此，使用者可依據使用需求而自行選擇切割區域，而形成不同電路迴路設計。故，本發明的發光單元的製作方法可讓使用者具有較佳製作上的靈活度，且所形成的發光單元可具有多種不同態樣的電路迴路設計。In summary, the present invention performs a cutting process for cutting a semiconductor structure, a patterned metal layer, an encapsulant, and a substrate to define a light-emitting unit having a series circuit, a parallel circuit, or a series-parallel circuit. Therefore, the user can select the cutting area according to the use requirements, and form different circuit loop designs. Therefore, the manufacturing method of the light-emitting unit of the present invention allows the user to have better flexibility in production, and the formed light-emitting unit can have a plurality of different circuit circuit designs.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
100a、100b、100c、100d、100e、100f、100g‧‧‧發光單元100a, 100b, 100c, 100d, 100e, 100f, 100g‧‧‧ lighting units
110‧‧‧半導體結構 110‧‧‧Semiconductor structure
120、120a、120b、120c、120d、120e、120f、120g、120h、120i、120j、120k‧‧‧發光晶粒 120, 120a, 120b, 120c, 120d, 120e, 120f, 120g, 120h, 120i, 120j, 120k‧‧‧ luminescent crystal
122‧‧‧發光元件 122‧‧‧Lighting elements
124‧‧‧第一電極 124‧‧‧First electrode
126‧‧‧第二電極 126‧‧‧second electrode
130‧‧‧封裝膠體 130‧‧‧Package colloid
132‧‧‧螢光材料 132‧‧‧Fluorescent materials
140‧‧‧圖案化金屬層 140‧‧‧ patterned metal layer
150‧‧‧基板 150‧‧‧Substrate
160、160’‧‧‧外部電路 160, 160'‧‧‧ External circuits
162‧‧‧承載板 162‧‧‧Loading board
164a‧‧‧第一外部接點 164a‧‧‧First external contact
164b‧‧‧第二外部接點 164b‧‧‧Second external contact
166‧‧‧散熱件 166‧‧‧ Heat sink
168‧‧‧圖案化線路層 168‧‧‧ patterned circuit layer
C、D、E‧‧‧切割區域 C, D, E‧‧‧ cutting area
G‧‧‧間隔 G‧‧‧ interval
圖1至圖5繪示為本發明的一實施例的一種發光單元的製作方法的示意圖。FIG. 1 to FIG. 5 are schematic diagrams showing a method of fabricating a light emitting unit according to an embodiment of the invention.
圖6繪示為本發明的另一實施例的一種發光單元的剖面示意圖。 FIG. 6 is a cross-sectional view showing a light emitting unit according to another embodiment of the present invention.
圖7A與圖7B繪示為本發明的又一實施例的一種發光單元的不同剖面的剖面示意圖。 7A and 7B are cross-sectional views showing different cross sections of a light emitting unit according to still another embodiment of the present invention.
圖8繪示為本發明的另一實施例的一種發光單元的剖面示意圖。 FIG. 8 is a cross-sectional view showing a light emitting unit according to another embodiment of the present invention.
圖9繪示為本發明的又一實施例的一種發光單元的剖面示意圖。 FIG. 9 is a cross-sectional view showing a light emitting unit according to still another embodiment of the present invention.
圖10繪示為本發明的再一實施例的一種發光單元的剖面示意圖。 FIG. 10 is a cross-sectional view showing a light emitting unit according to still another embodiment of the present invention.
圖11繪示為本發明的更一實施例的一種發光單元的剖面示意圖。 FIG. 11 is a cross-sectional view showing a light emitting unit according to a further embodiment of the present invention.
Claims (7)
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