TW201932393A - Carrier for contactless transportation in a deposition system, apparatus for contactless transportation of a carrier, and method for contactless transportation of a carrier in a deposition system - Google Patents

Carrier for contactless transportation in a deposition system, apparatus for contactless transportation of a carrier, and method for contactless transportation of a carrier in a deposition system Download PDF

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TW201932393A
TW201932393A TW107137885A TW107137885A TW201932393A TW 201932393 A TW201932393 A TW 201932393A TW 107137885 A TW107137885 A TW 107137885A TW 107137885 A TW107137885 A TW 107137885A TW 201932393 A TW201932393 A TW 201932393A
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carrier
item
sensors
deposition system
transfer
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TW107137885A
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Chinese (zh)
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克里斯蒂安沃爾夫岡 埃曼
克里斯汀 申巴赫
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美商應用材料股份有限公司
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Publication of TW201932393A publication Critical patent/TW201932393A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715—Changing the direction of the conveying path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present disclosure provides a carrier (200) for contactless transportation in a deposition system. The carrier (200) includes one or more first magnet units (210) provided along a transport direction (1) of the carrier (200), and a detectable device having a geometric profile (220) arranged at an end portion of the carrier (200) and varying along the transport direction (1).

Description

用於在一沈積系統中非接觸傳送之載體、用於一載體之非接觸傳送之設備、及用於在一沈積系統中之一載體的非接觸傳送之方法Carrier for non-contact transfer in a deposition system, equipment for non-contact transfer of a carrier, and method for non-contact transfer of a carrier in a deposition system

本揭露之數個實施例是有關於一種用於在一沈積系統中非接觸傳送之載體、一種用於一載體之非接觸傳送的設備、及一種用於在一沈積系統中之一載體的非接觸傳送的方法。本揭露之數個實施例特別是有關於一種靜電吸座(electrostatic chuck，E-chuck)，用以支承使用在有機發光二極體(organic light-emitting diode，OLED)裝置之製造中的數個基板及/或數個遮罩。Embodiments of the present disclosure relate to a carrier for non-contact transfer in a deposition system, a device for non-contact transfer of a carrier, and a non-contact transfer for a carrier in a deposition system. Method of contact transmission. The embodiments disclosed in this disclosure are particularly related to an electrostatic chuck (E-chuck) for supporting several used in the manufacture of organic light-emitting diode (OLED) devices. A substrate and / or several masks.

用於層沈積於基板上之技術舉例為包括熱蒸發、物理氣相沈積(physical vapor deposition，PVD)、及化學氣相沈積(chemical vapor deposition，CVD)。已塗佈之基板可使用於數種應用中及數種技術領域中。舉例來說，已塗佈之基板可使用於有機發光二極體(organic light emitting diode，OLED)裝置之領域中。OLEDs可使用於電視螢幕、電腦顯示器、行動電話、其他手持裝置、及用以顯示資訊之類似者的製造中。OLED裝置例如是OLED顯示器，可包括一或多個有機材料層。此一或多個有機材料層位於全沈積於基板上的兩個電極之間。Examples of techniques for layer deposition on a substrate include thermal evaporation, physical vapor deposition (PVD), and chemical vapor deposition (CVD). The coated substrate can be used in several applications and in several technical fields. For example, the coated substrate can be used in the field of organic light emitting diode (OLED) devices. OLEDs can be used in the manufacture of television screens, computer monitors, mobile phones, other handheld devices, and the like for displaying information. The OLED device is, for example, an OLED display, and may include one or more organic material layers. The one or more organic material layers are located between two electrodes that are entirely deposited on the substrate.

在處理期間，基板可支撐於載體上。載體係裝配，以支承基板及選擇的遮罩。載體可利用磁力在沈積系統之內側非接觸地傳送，此沈積系統例如是真空沈積系統。針對例如是有機發光裝置之應用來說，沈積於基板上之有機層的純度與均勻性應為高的。再者，利用非接觸傳送，處理及傳送支撐基板及遮罩的載體而不因基板破裂來犧牲產量係具有挑戰性的。During processing, the substrate may be supported on a carrier. The carrier is assembled to support the substrate and a selected mask. The carrier can be transferred non-contact inside the sedimentation system using magnetic force, such as a vacuum deposition system. For applications such as organic light emitting devices, the purity and uniformity of the organic layer deposited on the substrate should be high. Furthermore, it is challenging to utilize non-contact transfer, process, and transfer carriers that support substrates and masks without sacrificing yield due to substrate breakage.

有鑑於上述，新的用於在沈積系統中非接觸傳送之載體、用於載體之非接觸傳送之設備、及用於在沈積系統中之載體的非接觸傳送之方法係有利的，而克服本領域中之至少一些問題。本揭露特別是著重於提供可在沈積系統中有效率及平順傳送之載體，此沈積系統例如是真空沈積系統。In view of the above, new carriers for non-contact transmission in a sedimentary system, equipment for non-contact transmission of a carrier, and methods for non-contact transmission of a carrier in a sedimentary system are advantageous to overcome the present At least some issues in the field. This disclosure particularly focuses on providing a carrier that can be efficiently and smoothly transported in a sedimentation system, such as a vacuum deposition system.

有鑑於上述，提出一種用於在一沈積系統中非接觸傳送之載體、一種用於一載體之非接觸傳送的設備、及一種用於在一沈積系統中之一載體的非接觸傳送的方法。本揭露之其他方面、優點、及特徵係透過申請專利範圍、說明、及所附的圖式更為清楚。In view of the above, a carrier for non-contact transfer in a deposition system, a device for non-contact transfer of a carrier, and a method for non-contact transfer of a carrier in a deposition system are proposed. Other aspects, advantages, and features of this disclosure are made clearer through the scope, description, and drawings of the patent application.

根據本揭露之一方面，提出一種用於在一沈積系統中非接觸傳送之載體。載體包括一或多個第一磁鐵單元，沿著載體之一傳送方向設置；以及一幾何輪廓，配置於載體的一端部及沿著傳送方向變化。According to one aspect of the present disclosure, a carrier for non-contact transfer in a deposition system is proposed. The carrier includes one or more first magnet units, which are disposed along one of the carrier's conveying directions; and a geometric profile, which is disposed at one end of the carrier and varies along the conveying direction.

根據本揭露之另一方面，提出一種用於在一沈積系統中非接觸傳送之載體。載體包括一或多個第一磁鐵單元，沿著載體之一傳送方向設置；以及一可偵測裝置，位在載體之一端部，其中可偵測裝置具有不同材料性質之二或多個區段，沿著傳送方向配置。According to another aspect of the present disclosure, a carrier for non-contact transfer in a deposition system is proposed. The carrier includes one or more first magnet units disposed along one of the carrier's transmission directions; and a detectable device located at one end of the carrier, wherein the detectable device has two or more sections of different material properties , Along the transmission direction.

根據本揭露之其他方面，提出一種用於一載體之非接觸傳送的設備。設備包括一導引結構，具有數個主動磁性單元；一或多個第一感測器；以及根據本揭露之用於在一沈積系統中非接觸傳送的載體。According to other aspects of the present disclosure, a device for contactless transfer of a carrier is proposed. The device includes a guiding structure with several active magnetic units; one or more first sensors; and a carrier for non-contact transfer in a deposition system according to the present disclosure.

根據本揭露之再其他方面，提出一種用於在一沈積系統中之一載體之非接觸傳送的方法。此方法包括偵測沈積系統之一感測器及在載體之一端部的一幾何輪廓之間的一距離，載體係在一傳送方向中傳送；以及當已偵測之距離係顯示出幾何輪廓之一改變時，控制沈積系統之至少一主動磁性單元。According to still other aspects of the present disclosure, a method for non-contact transfer of a carrier in a deposition system is proposed. The method includes detecting a distance between a sensor of a deposition system and a geometrical contour at one end of a carrier, the carrier being transported in a conveying direction; and when the detected distance shows a geometrical contour. Upon a change, at least one active magnetic unit of the deposition system is controlled.

根據本揭露之另一方面，提出一種用於在一沈積系統中之一載體之非接觸傳送的方法。此方法包括偵測載體之一端部的至少一材料特徵或性質，載體係在一傳送方向中傳送；以及當偵測之此至少一材料特徵或性質顯示出一材料改變時，控制沈積系統之至少一主動磁性單元。According to another aspect of the present disclosure, a method for non-contact transfer of a carrier in a deposition system is proposed. The method includes detecting at least one material feature or property of one end of a carrier, the carrier being conveyed in a conveying direction; and controlling at least one of the deposition system when the detected at least one material feature or property shows a material change An active magnetic unit.

根據本揭露之另一方面，提出一種沈積系統。此系統包括一沈積腔室；根據此處所述實施例之載體；及一傳送配置，裝配以用於在沈積腔室中之載體的非接觸傳送。According to another aspect of this disclosure, a deposition system is proposed. This system includes a deposition chamber; a carrier according to the embodiments described herein; and a transfer configuration that is assembled for contactless transfer of the carrier in a sedimentation chamber.

數個實施例係亦有關於用以執行所揭露之方法之設備，且包括用以執行各所述之方法方面的設備部件。此些方法方面可藉由硬體元件、由合適軟體程式化之電腦、兩者之任何結合或任何其他方式執行。再者，根據本揭露之數個實施例係亦有關於用以操作所述之設備的方法。用以操作所述之設備的此些方法包括數個方法方面，用以執行設備之各功能。為了對本發明之上述及其他方面有更佳的瞭解，下文特舉實施例，並配合所附圖式詳細說明如下：Several embodiments are also related to equipment for performing the disclosed methods, and include equipment components for performing each of the described method aspects. These method aspects may be implemented by hardware components, a computer programmed with suitable software, any combination of the two, or any other means. Furthermore, several embodiments according to the present disclosure also relate to a method for operating the device described. These methods for operating the described device include several method aspects for performing various functions of the device. In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are described in detail below in conjunction with the accompanying drawings:

詳細的參照現在將以本揭露的數種實施例達成，數種實施例的一或多個例子係繪示於圖式中。在圖式之下方說明中，相同的參考編號係意指相同的元件。一般來說，僅有有關於個別實施例之相異處係進行說明。各例子係藉由說明本揭露的方式提供且不意味為本揭露之一限制。再者，所說明或敘述而做為一實施例之部份之特徵可用於其他實施例或與其他實施例結合，以取得再其他實施例。此意圖係本揭露包括此些調整及變化。Detailed reference will now be achieved with several embodiments of the present disclosure, one or more examples of which are shown in the drawings. In the description below the drawings, the same reference numerals refer to the same elements. Generally, only the differences between the individual embodiments are described. Each example is provided by way of illustration and is not meant to be a limitation of the disclosure. Furthermore, the features described or described as part of one embodiment can be used in or combined with other embodiments to obtain still other embodiments. This intention is that this disclosure includes such adjustments and changes.

載體可使用於例如是真空沈積系統之沈積系統中。載體用以在沈積系統之沈積腔室中支承及傳送基板及/或遮罩。舉例來說，當基板係支撐於載體上時，一或多個材料層可沈積於基板上。對於例如是有機發光裝置之應用來說，沈積於基板上之有機層的高純度及均勻性可為有利的。再者，沈積系統之內側的載體之平順傳送係有利的，以舉例為減少基板破裂。The carrier can be used in a deposition system such as a vacuum deposition system. The carrier is used to support and transfer the substrate and / or the mask in the deposition chamber of the sedimentation system. For example, when the substrate is supported on a carrier, one or more material layers may be deposited on the substrate. For applications such as organic light emitting devices, the high purity and uniformity of the organic layer deposited on the substrate may be advantageous. Furthermore, smooth transfer of the carrier inside the deposition system is advantageous, for example to reduce substrate cracking.

根據本揭露之實施例，載體具有可偵測裝置，可偵測裝置具有可由一或多個感測器偵測之變化特徵。於一實施例中，載體係提供而具有變化之幾何輪廓於載體的一端部，此變化也就是非固定。於另一實施例中，載體係提供而具有不同材料或材料特性之數個區段。沈積系統之傳送配置可偵測變化，及決定相對於傳送配置之載體的一位置，及特別是載體之一或多端之位置。基於已偵測的變化及載體之位置或從其偏離之端部，可控制裝配以用於載體之非接觸傳送的傳送配置。舉例來說，載體之一或多個邊緣的位置可決定，及傳送配置之一或多個主動磁性單元可選擇地控制。特別是，位於載體之邊緣及/或邊緣部份所靠近之主動磁性單元可控制。在傳送方向中之載體的平順傳送可達成。因載體之不穩定傳送所致使的基板破裂及/或粒子之產生可減少或甚至避免。According to the embodiment of the disclosure, the carrier has a detectable device, and the detectable device has a change characteristic that can be detected by one or more sensors. In one embodiment, the carrier is provided with a changed geometric profile at one end of the carrier, and the change is not fixed. In another embodiment, the carrier is provided with several sections having different materials or material properties. The transport configuration of the deposition system can detect changes and determine a position relative to the carrier of the transport configuration, and in particular the position of one or more ends of the carrier. Based on the detected changes and the position of the carrier or the end that deviates from it, the transfer configuration that is assembled for contactless transfer of the carrier can be controlled. For example, the position of one or more edges of the carrier may be determined, and one or more active magnetic units of the transfer configuration may be selectively controlled. In particular, an active magnetic unit located near the edge and / or edge portion of the carrier can be controlled. Smooth transfer of the carrier in the transfer direction can be achieved. Substrate rupture and / or particle generation due to unstable transfer of the carrier can be reduced or even avoided.

第1圖繪示載體100及傳送配置之一部份的示意圖。傳送係配置裝配，以用於在傳送方向1中之載體100的非接觸傳送。傳送方向1可為水平方向。FIG. 1 is a schematic diagram of the carrier 100 and a part of the transmission configuration. The transfer system is configured for contactless transfer of the carrier 100 in the transfer direction 1. The transmission direction 1 may be a horizontal direction.

傳送配置包括導引結構110，導引結構110可為主動導引結構。導引結構110包括數個導件單元111，此些導件單元111沿著傳送方向配置。各導件單元111包括(舉例為電磁)致動器112、控制器114、及距離感測器116。致動器112例如是主動磁性單元。控制器114係裝配以控制致動器。距離感測器116係裝配，以測量至載體100之縫隙。導引結構110可裝配，以利用磁力非接觸懸浮載體100。The transfer configuration includes a guiding structure 110, which may be an active guiding structure. The guiding structure 110 includes a plurality of guide units 111, and the guide units 111 are arranged along the conveying direction. Each guide unit 111 includes (for example, an electromagnetic) actuator 112, a controller 114, and a distance sensor 116. The actuator 112 is, for example, an active magnetic unit. The controller 114 is assembled to control the actuator. The distance sensor 116 is assembled to measure the gap to the carrier 100. The guide structure 110 can be assembled to utilize magnetic force to contact the suspended carrier 100.

當載體100接近或離開導件單元111時，懸浮準確性及/或懸浮穩定性可能受到影響。特別是，可能致使突然加速或減速載體100之大量及/或脈衝狀(pulse-like)的力可能在載體100接近或離開導件單元111時產生。此力可取決於導引結構110之元件的幾何配置及裝配，及特別是此些導件單元111(舉例為電磁致動器及感測器)的幾何配置及裝配。此力可能致使載體100之不需要及突然的運動，及可能甚至致使載體100及導引結構110之間意外的機械接觸。載體100、基板及/或導引結構110可能受損。再者，粒子可能產生，而可能劣化沈積製程的品質。When the carrier 100 approaches or leaves the guide unit 111, the suspension accuracy and / or suspension stability may be affected. In particular, a large amount and / or pulse-like force that may cause sudden acceleration or deceleration of the carrier 100 may be generated when the carrier 100 approaches or leaves the guide unit 111. This force may depend on the geometric configuration and assembly of the elements of the guide structure 110, and in particular the geometric configuration and assembly of these guide units 111 (for example, electromagnetic actuators and sensors). This force may cause unwanted and sudden movements of the carrier 100, and may even cause accidental mechanical contact between the carrier 100 and the guide structure 110. The carrier 100, the substrate, and / or the guide structure 110 may be damaged. Furthermore, particles may be generated, which may degrade the quality of the deposition process.

當載體100突然從距離感測器116之下方消失時，脈衝狀之力或在懸浮力之方向中之力的改變，及特別是致動器提供之磁力之方向(舉例為垂直方向3)中的力的改變可能發生。此情況可能在距離感測器116產生訊號值。如果載體在距離(或測量)方向中執行快速遠離距離感測器116之動作時，在距離感測器116係同樣產生訊號值。距離(或測量)方向例如是垂直方向3。也就是說，距離感測器116顯示出縫隙擴大。訊號改變可能致使控制器強烈地增加致動器力，以帶動載體100「移動」回到導引結構110及載體100之間的設定距離處。When the carrier 100 suddenly disappears from below the distance sensor 116, the change of the pulsating force or the force in the direction of the levitation force, and especially the direction of the magnetic force provided by the actuator (for example, vertical direction 3) Changes in force may occur. This situation may generate a signal value at the distance sensor 116. If the carrier performs the action of moving away from the distance sensor 116 quickly in the distance (or measurement) direction, a signal value is also generated in the distance sensor 116. The distance (or measurement) direction is, for example, the vertical direction 3. That is, the distance sensor 116 shows that the gap is enlarged. The signal change may cause the controller to strongly increase the actuator force to drive the carrier 100 to "move" back to the set distance between the guide structure 110 and the carrier 100.

再者，當載體100接近或離開導件單元111時，沿著傳送方向1之力成份可產生。力成份可能甚至夠強，以妨礙載體100之其他傳送。沿著傳送方向1之力成份可能源自於作用在載體之正面及/或後面(舉例為前緣或後緣)之致動器的磁阻(reluctance)。此係藉由在載體100之後面的磁場線範例地繪示於第1圖中。Furthermore, when the carrier 100 approaches or leaves the guide unit 111, a force component along the conveying direction 1 may be generated. The force component may even be strong enough to prevent other transmissions of the carrier 100. The force component along the transmission direction 1 may be derived from the reluctance of the actuator acting on the front and / or the back of the carrier (for example, the leading edge or the trailing edge). This is exemplarily shown in FIG. 1 by the magnetic field lines behind the carrier 100.

第2A圖繪示根據此處所述實施例之用於在真空系統中非接觸傳送之載體200的示意圖。載體200可避免上述參照第1圖的不需要的移動。FIG. 2A shows a schematic diagram of a carrier 200 for non-contact transfer in a vacuum system according to an embodiment described herein. The carrier 200 can avoid the unnecessary movement described above with reference to FIG. 1.

載體200包括磁性結構。磁性結構具有一或多個第一磁鐵單元210。此一或多個第一磁鐵單元210沿著載體200之傳送方向1設置。載體200更包括可偵測裝置。可偵測裝置具有幾何輪廓220。幾何輪廓220配置於載體200之端部，及沿著傳送方向1變化。幾何輪廓220可藉由真空系統之傳送配置之一或多個第一感測器118為可偵測的，以決定相對於導引結構之此些導件單元111的至少一導件單元之載體200的位置，或載體200之端部的位置。就此點而言，幾何輪廓220可亦意指為「感測器軌跡(sensor trail)」。The carrier 200 includes a magnetic structure. The magnetic structure has one or more first magnet units 210. The one or more first magnet units 210 are disposed along the conveying direction 1 of the carrier 200. The carrier 200 further includes a detectable device. The detectable device has a geometric contour 220. The geometric profile 220 is arranged at the end of the carrier 200 and changes along the conveying direction 1. The geometric profile 220 may be detectable by one or more first sensors 118 of the conveying configuration of the vacuum system to determine the carrier of at least one of the guide units 111 relative to the guide structure 111 200, or the end of the carrier 200. In this regard, the geometric profile 220 may also be referred to as a "sensor trail".

載體200係裝配，以用於沿著傳送路徑非接觸傳送通過沈積系統之例如是真空腔室的一或多個腔室，及特別是通過至少一沈積區域。傳送路徑例如是線性傳送路徑。載體200可裝配，以用於在傳送方向1中非接觸傳送。傳送方向1可為水平方向。The carrier 200 is assembled for non-contact transfer along a transfer path through one or more chambers, such as a vacuum chamber, of a deposition system, and in particular through at least one deposition area. The transmission path is, for example, a linear transmission path. The carrier 200 can be assembled for non-contact transfer in the transfer direction 1. The transmission direction 1 may be a horizontal direction.

根據可與此處所述其他實施例結合之一些實施例，沈積系統可包括傳送配置。傳送配置係裝配，以用於在沈積系統中非接觸懸浮及/或非接觸傳送載體200。傳送配置可包括導引結構及驅動結構。導引結構用以提供磁性懸浮力來懸浮載體200。驅動結構用以在傳送方向1中移動載體200。載體200之磁性結構之此一或多個第一磁鐵單元210可裝配，以與導引結構磁***互作用。於一些應用中，此一或多個第一磁鐵單元210可為被動磁鐵單元，例如是永久磁鐵單元及/或鐵磁部件。According to some embodiments that may be combined with other embodiments described herein, the deposition system may include a transfer configuration. The transfer configuration is assembled for non-contact suspension and / or non-contact transfer carrier 200 in a sedimentation system. The transfer configuration may include a guiding structure and a driving structure. The guiding structure is used to provide a magnetic levitation force to suspend the carrier 200. The driving structure is used to move the carrier 200 in the conveying direction 1. The one or more first magnet units 210 of the magnetic structure of the carrier 200 may be assembled to magnetically interact with the guide structure. In some applications, the one or more first magnet units 210 may be passive magnet units, such as permanent magnet units and / or ferromagnetic components.

根據可與此處所述其他實施例結合之一些實施例，載體200之磁性結構包括一或多個第二磁鐵單元(未繪示)。此一或多個第二磁鐵單元係裝配，以與驅動結構磁***互作用來在傳送方向1中移動載體200。於一些應用中，此一或多個第二磁鐵單元可為被動磁鐵單元，例如是鐵磁體。導引結構及驅動結構可配置載體200之相反端或端部。類似地，此一或多個第一磁鐵單元210及此一或多個第二磁鐵單元可配置於載體200之相反端或端部。According to some embodiments that can be combined with other embodiments described herein, the magnetic structure of the carrier 200 includes one or more second magnet units (not shown). The one or more second magnet units are assembled to magnetically interact with the driving structure to move the carrier 200 in the conveying direction 1. In some applications, the one or more second magnet units may be passive magnet units, such as ferromagnets. The guiding structure and the driving structure may be disposed at opposite ends or ends of the carrier 200. Similarly, the one or more first magnet units 210 and the one or more second magnet units may be disposed at opposite ends or ends of the carrier 200.

載體200具有端部，例如第一端部及第二端部，第二端部相反於第一端部。基板可位在第一端部及第二端部之間。第一端部可為頂部(或上)端部，及第二端部可為底部(或下)端部。第一端部及第二端部可舉例為在本質上水平方向中本質上水平延伸。幾何輪廓220可提供於第一端部及/或第二端部。第2A圖之例子範例地繪示出幾何輪廓220及在第一端部之及此一或多個第一磁鐵單元210，第一端部係為載體200之頂部或上端部。幾何輪廓220及此一或多個第一磁鐵單元210可面對傳送配置之導引結構。此一或多個第二磁鐵單元可位於第二端部，第二端部可為載體200之底部或下端部。此一或多個第二磁鐵單元可面對傳送配置之驅動結構。The carrier 200 has end portions, such as a first end portion and a second end portion, and the second end portion is opposite to the first end portion. The substrate may be positioned between the first end portion and the second end portion. The first end portion may be a top (or upper) end portion, and the second end portion may be a bottom (or lower) end portion. The first end portion and the second end portion may, for example, extend substantially horizontally in a substantially horizontal direction. The geometric profile 220 may be provided at the first end and / or the second end. The example in FIG. 2A illustrates the geometric outline 220 and the one or more first magnet units 210 at the first end portion, and the first end portion is the top or upper end portion of the carrier 200. The geometric profile 220 and the one or more first magnet units 210 may face the guide structure of the transfer configuration. The one or more second magnet units may be located at the second end portion, and the second end portion may be a bottom portion or a lower end portion of the carrier 200. The one or more second magnet units may face the driving structure of the transfer configuration.

根據可與此處所述其他實施例結合之一些實施例，幾何輪廓220係舉例為在傳送方向1中延伸載體200之整個長度的一元件。載體200之長度可沿著傳送方向1定義，舉例為沿著傳送方向1之載體200的第一端201及第二端202之間定義。According to some embodiments that can be combined with other embodiments described herein, the geometric profile 220 is exemplified as an element that extends the entire length of the carrier 200 in the transport direction 1. The length of the carrier 200 can be defined along the conveying direction 1, for example, it is defined between the first end 201 and the second end 202 of the carrier 200 along the conveying direction 1.

沈積系統及特別是傳送配置可包括導引結構。導引結構具有此些導件單元111。各導件單元111可包括致動器112、控制器114、及第二感測器。致動器112例如是主動磁性單元。控制器114裝配以控制致動器112。第二感測器係裝配，以感測或測量此一或多個第一磁鐵單元210及致動器112之間的縫隙。縫隙可在垂直於傳送方向1之一方向中測量。此方向例如是垂直方向3。特別是，舉例為在載體200位於第二感測器處時，第二感測器可配置以面對此一或多個第一磁鐵單元210，以感測或測量此一或多個第一磁鐵單元210及致動器112之間的縫隙。第二感測器可為距離感測器116。The deposition system and particularly the transfer configuration may include a guide structure. The guide structure has these guide units 111. Each guide unit 111 may include an actuator 112, a controller 114, and a second sensor. The actuator 112 is, for example, an active magnetic unit. The controller 114 is equipped to control the actuator 112. The second sensor is assembled to sense or measure a gap between the one or more first magnet units 210 and the actuator 112. The gap can be measured in one of the directions perpendicular to the conveying direction 1. This direction is, for example, the vertical direction 3. Particularly, for example, when the carrier 200 is located at the second sensor, the second sensor may be configured to face the one or more first magnet units 210 to sense or measure the one or more first magnet units 210. A gap between the magnet unit 210 and the actuator 112. The second sensor may be a distance sensor 116.

控制器114可裝配以控制致動器112，以基於第二感測器測量之縫隙來調整致動器112所提供之磁力。特別是，控制器114可裝配以控制致動器112，使得此一或多個第一磁鐵單元210及致動器112之間的距離係在載體200傳送通過沈積系統時本質上固定。雖然第2A圖範例地繪示出各導件單元111具有控制器，將理解的是，本揭露係不以此為限，及控制器可分配給二或多個導件單元。舉例來說，一個單一控制器可設置而用於全部的導件單元。The controller 114 may be configured to control the actuator 112 to adjust the magnetic force provided by the actuator 112 based on the gap measured by the second sensor. In particular, the controller 114 may be equipped to control the actuator 112 such that the distance between the one or more first magnet units 210 and the actuator 112 is substantially fixed when the carrier 200 is passed through the deposition system. Although FIG. 2A exemplarily illustrates that each guide unit 111 has a controller, it will be understood that the disclosure is not limited thereto, and the controller may be allocated to two or more guide units. For example, a single controller can be set up for all guide units.

導引結構可更包括此一或多個第一感測器118，裝配以偵測可偵測裝置，舉例為幾何輪廓220。除了此一或多個第二感測器之外，可設置此一或多個第一感測器118。此一或多個第一感測器118可為距離感測器，裝配以偵測個別之第一感測器及幾何輪廓之間的距離，及特別是偵測個別之第一感測器及面對第一感測器之幾何輪廓的表面之間的距離。此距離可在垂直於傳送方向1之一方向中測量，此方向例如是垂直方向3。於一些應用中，各導件單元111包括個別之第一感測器，以測量幾何輪廓220。然而，本揭露係不以此為限，及第一感測器及第二感測器之功能可藉由相同的感測器提供。特別是，各導件單元111可僅包括一個感測器，此一個感測器係結合第一感測器及第桿側器的功能。The guiding structure may further include the one or more first sensors 118, which are assembled to detect a detectable device, such as a geometric profile 220. In addition to the one or more second sensors, the one or more first sensors 118 may be provided. The one or more first sensors 118 may be distance sensors, configured to detect the distance between the individual first sensor and the geometric contour, and in particular, to detect the individual first sensors and The distance between the surfaces facing the geometric contour of the first sensor. This distance can be measured in one of the directions perpendicular to the transport direction 1, such as the vertical direction 3. In some applications, each guide unit 111 includes an individual first sensor to measure the geometric profile 220. However, the disclosure is not limited thereto, and the functions of the first sensor and the second sensor can be provided by the same sensor. In particular, each guide unit 111 may include only one sensor, and this one sensor combines the functions of the first sensor and the rod side device.

可偵測裝置可藉由此一或多個第一感測器118為可偵測的。於一些應用中，可偵測裝置係配置，以舉例為在可偵測裝置位於個別之第一感測器處時，面對此一或多個第一感測器118。可偵測裝置位於個別之第一感測器處係舉例為位於個別之第一感測器之下方。根據可與此處所述其他實施例結合之一些實施例，可偵測裝置及此一或多個第一磁鐵單元210可舉例為在平行於傳送方向1之平面中彼此相鄰配置。此平面例如是本質上水平平面。舉例來說，可偵測裝置可貼附於具有此一或多個第一磁鐵單元210之載體200的磁性結構。The detectable device may be detectable by the one or more first sensors 118. In some applications, the detectable device is configured, for example, when the detectable device is located at an individual first sensor, the one or more first sensors 118 are faced to the first sensor. The detectable device is located at the individual first sensor, for example, it is located below the individual first sensor. According to some embodiments that can be combined with other embodiments described herein, the detectable device and the one or more first magnet units 210 can be exemplarily arranged adjacent to each other in a plane parallel to the transmission direction 1. This plane is, for example, a substantially horizontal plane. For example, the detectable device may be attached to a magnetic structure of the carrier 200 having the one or more first magnet units 210.

於一些應用中，個別之導件單元111的第一感測器及第二感測器可彼此相鄰配置，使得第一感測器面對可偵測裝置，及第二感測器面對此一或多個第一磁鐵單元210或相鄰於此一或多個第一磁鐵單元210之分離的感測器軌跡，如第2A圖之右側所示。導件單元111之致動器可選擇地配置而相鄰於第一感測器及第二感測器，使得致動器面對此一或多個第一磁鐵單元210。舉例來說，致動器、第一感測器及第二感測器可配置在相同平面，例如是本質上水平平面。根據一些實施例，第一感測器面對藉由可偵測裝置提供之第一感測器軌跡，及致動器面對藉由此一或多個第一磁鐵單元210提供之致動器軌跡。第二感測器可面對第二感測器軌跡，第二感測器軌跡可由此一或多個第一磁鐵單元210提供，或作為相鄰於此一或多個第一磁鐵單元210的分離之感測器軌跡。In some applications, the first sensor and the second sensor of the individual guide unit 111 may be disposed adjacent to each other, so that the first sensor faces the detectable device and the second sensor faces The one or more first magnet units 210 or the separated sensor traces adjacent to the one or more first magnet units 210 are shown on the right side of FIG. 2A. The actuators of the guide unit 111 are optionally arranged adjacent to the first sensor and the second sensor, so that the actuator faces the one or more first magnet units 210. For example, the actuator, the first sensor, and the second sensor may be disposed on the same plane, such as a substantially horizontal plane. According to some embodiments, the first sensor faces the first sensor trajectory provided by the detectable device, and the actuator faces the actuator provided by the one or more first magnet units 210 Track. The second sensor may face the second sensor trajectory, and the second sensor trajectory may be provided by the one or more first magnet units 210, or may be provided adjacent to the one or more first magnet units 210. Detected sensor track.

幾何輪廓220在載體200之第一端201及第二端202之間沿著傳送方向1變化。幾何輪廓220可提供在第一端201及第二端202之間延伸的第一感測器軌跡。如本揭露通篇所使用之名稱「幾何輪廓」係意指一輪廓或具有在傳送方向1中延伸及在一平面中具有非固定(或變化)之剖面形狀之輪廓的一元件。此平面由傳送方向1及垂直於傳送方向1之至少一方向定義。此至少一方向例如是垂直方向3。當從傳送方向1看時，幾何輪廓220可定義於載體200之第一端201(舉例為正面或前緣，可在傳送方向1中定義載體200之最外邊界)及第二端202(舉例為後面或後緣，可在相反於傳送方向1之方向中定義載體200的最外邊界)之間。也就是說，變化之幾何輪廓不意指在載體200之第一端201或第二端202之邊緣，但意指第一端201及第二端202之間的其他結構變化，此其他結構變化可由此一或多個第一感測器118偵測。The geometric profile 220 varies between the first end 201 and the second end 202 of the carrier 200 along the conveying direction 1. The geometric profile 220 may provide a first sensor trajectory extending between the first end 201 and the second end 202. The name "geometric profile" as used throughout this disclosure means a profile or an element having a profile that extends in the conveying direction 1 and has a non-fixed (or varying) cross-sectional shape in a plane. This plane is defined by the transmission direction 1 and at least one direction perpendicular to the transmission direction 1. The at least one direction is, for example, the vertical direction 3. When viewed from the conveying direction 1, the geometric profile 220 can be defined at the first end 201 of the carrier 200 (for example, the front or leading edge, and the outermost boundary of the carrier 200 can be defined in the conveying direction 1) and the second end 202 (for example For the trailing or trailing edge, the outermost boundary of the carrier 200 may be defined in a direction opposite to the conveying direction 1). That is, the changed geometrical contour does not mean the edge of the first end 201 or the second end 202 of the carrier 200, but it means other structural changes between the first end 201 and the second end 202. The one or more first sensors 118 detect.

根據可與此處所述其他實施例結合之一些實施例，幾何輪廓220包括一或多個塑形元件。於一些應用中，此一或多個塑形元件可選自包括凹槽、不連續處(discontinuity)、階級、斜面(inclination)、及其任何組合之群組。舉例來說，幾何輪廓220可為沿著載體200之長度延伸及具有此一或多個塑形元件之元件，此一或多個塑形元件例如是一或多個凹槽222。According to some embodiments that may be combined with other embodiments described herein, the geometric profile 220 includes one or more shaping elements. In some applications, the one or more shaping elements may be selected from the group consisting of grooves, discontinuities, stages, inclinations, and any combination thereof. For example, the geometric profile 220 may be an element extending along the length of the carrier 200 and having the one or more shaping elements, such as one or more grooves 222.

於一些實施例中，此一或多個塑形元件係配置於載體200之第一端201及/或第二端202。舉例來說，至少一第一塑形元件可配置於第一端201，及/或至少一第二塑形元件可配置於第二端202。此至少一第一塑形元件及此至少一第二塑形元件可本質上相同或可為不同。在第2A圖之例子中，此至少一第一塑形元件及此至少一第二塑形元件係皆為提供幾何輪廓220之元件中的凹槽。In some embodiments, the one or more shaping elements are disposed on the first end 201 and / or the second end 202 of the carrier 200. For example, at least one first shaping element may be disposed at the first end 201, and / or at least one second shaping element may be disposed at the second end 202. The at least one first shaping element and the at least one second shaping element may be substantially the same or may be different. In the example of FIG. 2A, the at least one first shaping element and the at least one second shaping element are both grooves in the element providing the geometric contour 220.

此一或多個塑形元件可配置於載體200之此些端，使得相對於導引結構之載體200的此些端的位置可決定。導件單元111之此一或多個主動磁性單元可控制，以在傳送方向中提供載體之平順傳送。特別是，位於載體之邊緣及/或邊緣所接近的致動器可進行控制。舉例來說，致動器所提供的磁力可連續地增加或減少，以在相鄰的致動器/磁鐵單元之間提供載體200之此些端的平順轉變(transition)。舉例來說，致動器的操作可減少，使得致動器在載體200「離開」致動器時本質上沒有在載體200上施加力。The one or more shaping elements may be disposed at the ends of the carrier 200 so that the positions relative to the ends of the carrier 200 relative to the guide structure may be determined. The one or more active magnetic units of the guide unit 111 can be controlled to provide smooth conveyance of the carrier in the conveying direction. In particular, the actuator located at the edge of the carrier and / or close to the edge can be controlled. For example, the magnetic force provided by the actuator may be continuously increased or decreased to provide smooth transitions at these ends of the carrier 200 between adjacent actuator / magnet units. For example, the operation of the actuator may be reduced such that the actuator essentially does not exert a force on the carrier 200 when the carrier 200 "leaves" the actuator.

根據可與此處所述其他實施例結合之一些實施例，在致動器112及/或第二感測器「離開」載體200上之個別軌跡之前，導件單元111的控制器114可停止致動器112。只有在致動器112及/或第二感測器面對載體200上之個別軌跡之後，導件單元111之控制器114可選擇地或替代地啟動致動器112。也就是說，在載體200「離開」致動器之前，致動器係停止。類似地，停止的致動器係只有在致動器及載體之磁鐵結構重疊之後啟動。啟動及/或停止致動器可為逐步(stepwise)、連續、或突然的。According to some embodiments that may be combined with other embodiments described herein, the controller 114 of the guide unit 111 may stop before the actuator 112 and / or the second sensor "leave" individual tracks on the carrier 200 Actuator 112. Only after the actuator 112 and / or the second sensor face an individual trajectory on the carrier 200, the controller 114 of the guide unit 111 may alternatively or alternatively activate the actuator 112. That is, the actuator system stops before the carrier 200 "leaves" the actuator. Similarly, a stopped actuator is activated only after the actuator and the magnet structure of the carrier overlap. Starting and / or stopping the actuator may be stepwise, continuous, or sudden.

根據一些實施例，此一或多個塑形元件之個別的塑形元件可具有在傳送方向1中沿著幾何輪廓220及/或載體200之長度的長度延伸。個別之塑形元件的長度延伸可對應於幾何輪廓220及/或載體200之長度的至少1%，特別是長度之至少4%，特別是長度之至少8%。According to some embodiments, the individual shaping elements of the one or more shaping elements may have a length extending along the length of the geometric profile 220 and / or the carrier 200 in the conveying direction 1. The length extension of the individual shaping elements may correspond to at least 1% of the length of the geometric profile 220 and / or the carrier 200, in particular at least 4% of the length, and in particular at least 8% of the length.

載體200可裝配，以支承在基板處理期間使用之基板及/或遮罩(未繪示)，此處理例如是真空處理。在一些應用中，載體200可裝配，以支撐基板及遮罩兩者。在其他應用中，載體200可裝配，以支撐基板或遮罩。在此一情況中，載體200可分別意指為「基板載體」及「遮罩載體」。The carrier 200 may be assembled to support a substrate and / or a mask (not shown) used during substrate processing, such as vacuum processing. In some applications, the carrier 200 may be assembled to support both the substrate and the mask. In other applications, the carrier 200 may be assembled to support a substrate or a mask. In this case, the carrier 200 may mean a "substrate carrier" and a "mask carrier", respectively.

載體200可包括支撐結構或主體205，提供支撐表面。支撐表面可為本質上平面，裝配以用於接觸舉例為基板之背面。特別是，基板可具有前表面(亦意指為「處理表面」)，相反於背表面，及層係在處理期間沈積於前表面上。此處理例如是真空沈積製程。幾何輪廓220可設置於主體205。The carrier 200 may include a support structure or body 205 that provides a support surface. The support surface may be essentially planar and assembled for contacting the back surface of a substrate, for example. In particular, the substrate may have a front surface (also referred to as a "processing surface"), as opposed to a back surface, and a layer is deposited on the front surface during processing. This process is, for example, a vacuum deposition process. The geometric contour 220 may be disposed on the main body 205.

本揭露通篇所使用的名稱「真空」可理解為具有少於舉例為10 mbar之真空壓力的技術壓力之含義。真空腔室中之壓力可在10-5 mbar及約10-8 mbar之間，特別是10-5 mbar及10-7 mbar之間，及更特別是約10-6 mbar及約10-7 mbar之間。 連接於真空腔室的一或多個真空幫浦可提供，用以在真空腔室的內側產生真空。此一或多個真空幫浦例如是渦輪幫浦及/或冷凍幫浦。The term "vacuum" as used throughout this disclosure can be understood as meaning a technical pressure having a vacuum pressure of less than 10 mbar, for example. The pressure in the vacuum chamber can be between 10 -5 mbar and about 10 -8 mbar, especially between 10 -5 mbar and 10 -7 mbar, and more particularly about 10 -6 mbar and about 10 -7 mbar between. One or more vacuum pumps connected to the vacuum chamber may be provided to generate a vacuum inside the vacuum chamber. The one or more vacuum pumps are, for example, turbopumps and / or cryopumps.

根據本揭露之載體200可為靜電吸座(electrostatic chuck，E-chuck)，提供靜電來支承基板及/或遮罩於載體200。舉例來說，載體200包括電極配置，裝配以提供作用於基板及遮罩之至少一者上的吸引力。電極配置可嵌入於主體205中，或可設置於主體205上，舉例為置放於主體205上。根據可與此處所述其他實施例結合之一些實施例，主體205係為介電主體，例如是介電板材。介電主體可由介電材料製造，較佳由高導熱性介電材料製造。高熱導性介電材料例如是熱解氮化硼(pyrolytic boron nitride)、氮化鋁、氮化矽、氧化鋁或等效材料，但可以例如是聚醯亞胺之此種材料製成。於一些實施例中，電極配置包括數個電極，例如是細金屬條之網格，置放於介電板材上及以薄介電層覆蓋。The carrier 200 according to the present disclosure may be an electrostatic chuck (E-chuck), which provides static electricity to support the substrate and / or shield the carrier 200. For example, the carrier 200 includes an electrode configuration that is assembled to provide an attractive force acting on at least one of the substrate and the mask. The electrode configuration may be embedded in the main body 205 or may be disposed on the main body 205, for example, placed on the main body 205. According to some embodiments that can be combined with other embodiments described herein, the body 205 is a dielectric body, such as a dielectric sheet. The dielectric body may be made of a dielectric material, preferably a highly thermally conductive dielectric material. The high thermal conductivity dielectric material is, for example, pyrolytic boron nitride, aluminum nitride, silicon nitride, aluminum oxide, or an equivalent material, but may be made of such material as polyimide. In some embodiments, the electrode configuration includes several electrodes, such as a grid of thin metal strips, placed on a dielectric plate and covered with a thin dielectric layer.

電極配置及特別是此些電極可裝配，以提供吸引力。吸引力例如是夾持力。吸引力可為在此些電極(或支撐表面)及基板及/或遮罩之間之特定相對距離處作用於基板及/或遮罩之力。吸引力可為由供應至此些電極配置之電壓所提供的靜電力。The electrode configuration and especially these electrodes can be assembled to provide attractiveness. The attractive force is, for example, a clamping force. The attractive force may be a force acting on the substrate and / or the mask at a specific relative distance between these electrodes (or supporting surfaces) and the substrate and / or the mask. The attractive force may be the electrostatic force provided by the voltage supplied to these electrode configurations.

基板可藉由載體200提供之吸引力(舉例為在垂直於傳送方向之方向中)朝向支撐表面吸引，載體200可為靜電吸座。吸引力可夠強，以藉由摩擦力支承基板於舉例為垂直位置中。特別是，吸引力可裝配，以本質上不移動地固定基板於支撐表面上。舉例來說，為了利用摩擦力支承0.5 mm的玻璃基板於垂直位置中，可根據摩擦係數使用約50至100 N/m2 (Pa)之吸引力。The substrate may be attracted toward the support surface by the attractive force provided by the carrier 200 (for example, in a direction perpendicular to the conveying direction), and the carrier 200 may be an electrostatic suction base. The attractive force may be strong enough to support the substrate in a vertical position, for example, by friction. In particular, the attractive force can be assembled to secure the substrate to the support surface substantially without moving. For example, in order to support a 0.5 mm glass substrate in a vertical position by friction, an attractive force of about 50 to 100 N / m 2 (Pa) may be used depending on the coefficient of friction.

根據可與此處所述其他實施例結合之一些實施例，載體200係裝配，以用於在實質上垂直定向中支承或支撐基板及/或遮罩。特別是，載體可裝配以用於在垂直定向中傳送。如本揭露通篇所使用，「實質上垂直」係特別在意指基板定向時理解為從垂直方向或定向±20°或以下之偏差，舉例為從垂直方向或定向±10°或以下之偏差。此偏差可提供，舉例為因為具有從垂直定向之一些偏差的基板支撐件可致使更穩定之基板位置。再者，當基板係略微地向前時，較少之粒子係到達基板表面。然而，舉例為在沈積製程期間，基板定向係視為實質上垂直，而不同於水平基板定向。水平基板定向可視為±20°或以下之水平。According to some embodiments that may be combined with other embodiments described herein, the carrier 200 is assembled for supporting or supporting a substrate and / or a mask in a substantially vertical orientation. In particular, the carrier can be assembled for transport in a vertical orientation. As used throughout this disclosure, "substantially vertical" means a deviation of ± 20 ° or less from the vertical direction or orientation, especially when the substrate is oriented, for example, a deviation of ± 10 ° or less from the vertical direction or orientation. This deviation may be provided, for example, because a substrate support with some deviation from a vertical orientation may result in a more stable substrate position. Furthermore, when the substrate system is slightly forward, fewer particles reach the substrate surface. However, for example, during the deposition process, the substrate orientation is considered to be substantially vertical, as opposed to a horizontal substrate orientation. The horizontal substrate orientation can be regarded as a level of ± 20 ° or less.

名稱「垂直方向」或「垂直定向」係理解為與「水平方向」或「水平定向」有所區別。也就是說，「垂直方向」或「垂直定向」係有關於舉例為載體之實質上垂直定向，其中從準確垂直方向或垂直定向之舉例為達10°或甚至達15°之一些角度的偏移係仍視為「實質上垂直方向」或「實質上垂直定向」。垂直方向可實質上平行於重力。The name "vertical direction" or "vertical orientation" is understood to be different from "horizontal direction" or "horizontal orientation". That is, "vertical orientation" or "vertical orientation" refers to the substantially vertical orientation of the carrier as an example, with examples of accurate vertical orientation or vertical orientation being offset by some angles up to 10 ° or even 15 ° Is still considered "substantially vertical" or "substantially vertical". The vertical direction may be substantially parallel to gravity.

此處所述之實施例可利用來蒸發於大面積基板上，舉例為用於OLED顯示器製造的大面積基板。特別是，根據此處所述數個實施例之結構及方法提供之基板係為大面積基板。舉例為來說，大面積基板可為第4.5代、第5代、第7.5代、第8.5代、或甚至是第10代。第4.5代對應於約0.67 m2 之表面積(0.73 m x 0.92 m)，第5代對應於約1.4 m2 之表面積(1.1 m x 1.3 m)、第7.5代對應於約4.29 m2 之表面積(1.95 m x 2.2 m)、第8.5代對應於約5.7 m2 之表面積(2.2 m x 2.5 m)、第10代對應於約8.7 m2 之表面積(2.85 m × 3.05 m)。甚至例如是第11代及第12代之更高代及對應之表面積可以類似的方式應用。此些代之一半的尺寸可亦提供於OLED顯示器製造中。The embodiments described herein can be utilized to evaporate on large-area substrates, such as large-area substrates used in OLED display manufacturing. In particular, the substrate provided by the structures and methods of the several embodiments described herein is a large-area substrate. For example, the large-area substrate may be the 4.5th generation, the 5th generation, the 7.5th generation, the 8.5th generation, or even the 10th generation. The 4.5th generation corresponds to a surface area of approximately 0.67 m 2 (0.73 mx 0.92 m), the 5th generation corresponds to a surface area of approximately 1.4 m 2 (1.1 mx 1.3 m), and the 7.5th generation corresponds to a surface area of approximately 4.29 m 2 (1.95 mx 2.2 m), the 8.5th generation corresponds to a surface area of approximately 5.7 m 2 (2.2 mx 2.5 m), and the 10th generation corresponds to a surface area of approximately 8.7 m 2 (2.85 m × 3.05 m). Even higher generations and corresponding surface areas such as the 11th and 12th generation can be applied in a similar manner. One-half the size of these generations can also be provided in OLED display manufacturing.

根據可與此處所述其他實施例結合之一些實施例，基板厚度可為從0.1至1.8 mm。基板厚度可為約0.9 mm或以下，例如是0.5 mm。如此處所使用之名稱「基板」可特別是包含實質上非撓性基板，舉例為晶圓、例如是藍寶石或類似者之透明水晶片、或玻璃板材。然而，本揭露係不以此為限，且名稱「基板」可亦包含撓性基板，例如是網格(web)或箔。名稱「實質上非撓性」係理解為與「撓性」有所區別。特別是，實質上非撓性基板可具有某種程度之撓性，舉例為具有0.9 mm或以下之厚度的玻璃板材，例如是具有0.5 mm或以下之厚度的玻璃板材，其中實質上非撓性基板之撓性相較於撓性基板係小的。According to some embodiments that can be combined with other embodiments described herein, the substrate thickness can be from 0.1 to 1.8 mm. The substrate thickness may be about 0.9 mm or less, such as 0.5 mm. The name "substrate" as used herein may particularly include a substantially non-flexible substrate, such as a wafer, such as a transparent crystal wafer of sapphire or the like, or a glass plate. However, this disclosure is not limited thereto, and the name “substrate” may also include flexible substrates, such as a web or a foil. The name "substantially inflexible" is understood to be different from "flexible". In particular, the substantially non-flexible substrate may have a certain degree of flexibility, for example, a glass plate having a thickness of 0.9 mm or less, such as a glass plate having a thickness of 0.5 mm or less, where the substantially non-flex The substrate is less flexible than a flexible substrate.

根據此處所述之數個實施例，基板可以適合用於材料沈積之任何材料製成。舉例來說，基板可以選自群組之材料製成，此群組由玻璃(舉例為鈉鈣玻璃(soda-lime glass)、硼矽玻璃(borosilicate glass)、及類似者)、金屬、聚合物、陶瓷、化合物材料、碳纖維材料或任何其他材料或可由沈積製程進行塗佈之材料之組合所組成。According to several embodiments described herein, the substrate may be made of any material suitable for material deposition. For example, the substrate may be made of a material selected from the group consisting of glass (for example, soda-lime glass, borosilicate glass, and the like), metal, polymer , Ceramics, compound materials, carbon fiber materials, or any other material or a combination of materials that can be coated by the deposition process.

第2B圖繪示根據此處所述其他實施例之用於在系統中非接觸傳送之載體200’的示意圖，此系統例如是真空系統。第2B圖之載體200’係類似於第2A圖之載體，及類似或相同方向的說明係不重複。Fig. 2B shows a schematic diagram of a carrier 200 'for contactless transfer in a system according to other embodiments described herein, such as a vacuum system. The carrier 200 'in FIG. 2B is similar to the carrier in FIG. 2A, and descriptions in a similar or same direction are not repeated.

載體200’包括可偵測裝置220’，可偵測裝置220’位於載體200’之端部，其中可偵測裝置220’具有二或多個區段222’，沿著傳送方向1配置。此二或多個區段222’具有不同的性質，例如是不同的磁性性質、不同的光學性質、及/或不同的電性性質。於一些應用中，此二或多個區段222’可以不同的材料製成，以提供不同的性質。在其他應用中，此二或多個區段222’可以本質上相同的材料製成，相同的材料係裝配以提供不同性質。舉例來說，磁性材料可不同地磁化，以提供此二或多個區段222’。可偵測裝置220’可藉由(真空)系統之傳送配置的一或多個第一感測器118為可偵測的，以決定相對於導引結構之此些導件單元111的至少一導件單元的載體200’之位置，或載體200’之端的位置。就此點而言，可偵測裝置220’可亦意指為「感測器軌跡」。The carrier 200 'includes a detectable device 220', which is located at an end of the carrier 200 '. The detectable device 220' has two or more sections 222 'and is arranged along the transmission direction 1. The two or more sections 222 'have different properties, such as different magnetic properties, different optical properties, and / or different electrical properties. In some applications, the two or more sections 222 'may be made of different materials to provide different properties. In other applications, the two or more sections 222 'may be made of essentially the same material, the same material being assembled to provide different properties. For example, the magnetic material may be magnetized differently to provide these two or more sections 222 '. The detectable device 220 'may be detectable by one or more first sensors 118 configured by the (vacuum) transmission system to determine at least one of the guide units 111 relative to the guide structure The position of the carrier 200 'of the guide unit, or the position of the end of the carrier 200'. In this regard, the detectable device 220 'may also be referred to as a "sensor track."

根據可與此處所述其他實施例結合之一些實施例，可偵測裝置在傳送方向1中延伸載體200’之整個長度。載體200’之長度可沿著傳送方向1定義，舉例為沿著傳送方向1之載體200’的第一端201及第二端202之間。According to some embodiments that can be combined with other embodiments described herein, the detectable device extends the entire length of the carrier 200 'in the transport direction 1. The length of the carrier 200 'can be defined along the transport direction 1, for example, between the first end 201 and the second end 202 of the carrier 200' along the transport direction 1.

於一些應用中，此二或多個區段222’可為不同材料，及可包括至少一第一區段及至少一第二區段。此至少一第一區段具有磁性材料，此至少一第二區段具有非磁性材料。此一或多個第一感測器118可為霍爾感測器，裝配以偵測磁性材料。舉例來說，載體之邊緣在此一或多個第一感測器118偵測磁性材料時接近或離開導件單元可決定出來。磁性材料可位於載體200’之邊緣。然而，本揭露不限於磁性裝配。光學及/或電性裝配可使用而提供此一或多個第一感測器118可偵測此二或多個區段之間的差異。In some applications, these two or more sections 222 'may be different materials and may include at least a first section and at least a second section. The at least one first section has a magnetic material, and the at least one second section has a non-magnetic material. The one or more first sensors 118 may be Hall sensors, which are assembled to detect magnetic materials. For example, the edge of the carrier may be determined to approach or leave the guide unit when the one or more first sensors 118 detect the magnetic material. The magnetic material may be located on the edge of the carrier 200 '. However, this disclosure is not limited to magnetic assembly. Optical and / or electrical assembly may be used to provide the one or more first sensors 118 to detect differences between the two or more sections.

導引結構可更包括此一或多個第一感測器118，裝配以偵測可偵測裝置，舉例為磁性材料。除了此一或多個第二感測器之外，可設置此一或多個第一感測器。此一或多個第一感測器118可為霍爾感測器，裝配以偵測源自於磁性材料之磁場。於一些應用中，可偵測裝置220’係配置，以舉例為在可偵測裝置係位於個別之第一感測器，舉例為在個別之第一感測器之下方時，面對此一或多個第一感測器118。根據可與此處所述其他實施例結合之一些實施例，可偵測裝置及此一或多個第一磁鐵單元210可舉例為在平行於傳送方向1之一平面中彼此相鄰配置，此平面例如是本質上水平平面。舉例來說，可偵測裝置220’可貼附於具有此一或多個第一磁鐵單元210之載體200’的磁性結構。The guiding structure may further include the one or more first sensors 118, which are assembled to detect a detectable device, such as a magnetic material. In addition to the one or more second sensors, the one or more first sensors may be provided. The one or more first sensors 118 may be Hall sensors, and are configured to detect a magnetic field originating from a magnetic material. In some applications, the detectable device 220 'is configured, for example, when the detectable device is located on an individual first sensor, for example, below the individual first sensor, Or multiple first sensors 118. According to some embodiments that can be combined with other embodiments described herein, the detectable device and the one or more first magnet units 210 may be exemplarily arranged adjacent to each other in a plane parallel to the conveying direction 1, The plane is, for example, a substantially horizontal plane. For example, the detectable device 220 'may be attached to the magnetic structure of the carrier 200' having the one or more first magnet units 210.

可偵測裝置220’提供在載體200’之第一端201及第二端202之間沿著傳送方向1變化之光學特徵(舉例為亮度、顏色、或條碼)、例如是磁性性質之變化之材料特徵、或變化之電性特徵(舉例為不同的感應及/或電阻性質)。可偵測裝置220’可提供第一感測器軌跡，於第一端201及第二端202之間延伸。The detectable device 220 'provides optical characteristics (such as brightness, color, or bar code) that change along the transmission direction 1 between the first end 201 and the second end 202 of the carrier 200', such as changes in magnetic properties. Material characteristics, or changing electrical characteristics (for example, different inductive and / or resistive properties). The detectable device 220 'can provide a first sensor track extending between the first end 201 and the second end 202.

可偵測裝置220’包括二或多個區段222’，此二或多個區域222’沿著傳送方向1配置。此二或多個區段222’可包括至少一第一區段及至少一第二區段。此第一區段具有第一材料性質，此第二區段具有第二材料性質，第二材料性質不同於第一材料性質。材料性質可為光學、電性、或磁性性質。此至少一第一區段可配置於第一端及/或第二端。舉例來說，各端可具有個別之第一區段。此至少一第二區段可配置於此二個第一區段之間。此至少一第二區段可舉例為在載體之中間部份延伸。The detectable device 220 'includes two or more sections 222', and the two or more regions 222 'are arranged along the transmission direction 1. The two or more sections 222 'may include at least a first section and at least a second section. The first section has a first material property, the second section has a second material property, and the second material property is different from the first material property. Material properties can be optical, electrical, or magnetic. The at least one first section may be disposed at the first end and / or the second end. For example, each end may have a separate first section. The at least one second section may be disposed between the two first sections. This at least one second section may, for example, extend in the middle portion of the carrier.

根據一些實施例，具有磁性材料之各第一區段可具有在傳送方向1中沿著可偵測裝置220’及/或載體200’之長度的長度延伸。第一區段之長度延伸可對應於可偵測裝置220’及/或載體200’之長度的至少1%，特別是長度之至少4%，特別是長度之至少8%。According to some embodiments, each first section with magnetic material may have a length extending along the length of the detectable device 220 'and / or the carrier 200' in the transport direction 1. The length extension of the first section may correspond to at least 1% of the length of the detectable device 220 'and / or the carrier 200', particularly at least 4% of the length, and especially at least 8% of the length.

第3圖繪示根據此處所述其他實施例之用於在真空系統中非接觸傳送之載體300的示意圖。第3圖之載體300係類似於第2A及B圖中之載體，及類似或相同元件之說明係不重複。FIG. 3 is a schematic diagram of a carrier 300 for non-contact transfer in a vacuum system according to other embodiments described herein. The carrier 300 in FIG. 3 is similar to the carrier in FIGS. 2A and B, and descriptions of similar or identical elements are not repeated.

根據可與此處所述其他實施例結合之一些實施例，幾何輪廓包括一或多個塑形元件。在第3圖之例子中，此一或多個塑形元件係斜面322。According to some embodiments that may be combined with other embodiments described herein, the geometric profile includes one or more shaping elements. In the example of FIG. 3, the one or more shaping elements are inclined surfaces 322.

於一些應用中，斜面322可為載體300之一表面，此表面係相對於傳送方向1傾斜。舉例來說，斜面322可相對於水平面傾斜。於一些實施例中，斜面322係配置於載體300之第一端201及/或第二端202。舉例來說，至少一第一斜面可配置於第一端201及/或至少一第二斜面可配置於載體之第二端202。此至少一第一斜面及此至少一第二斜面可在相反方向中傾斜。特別是，此至少一第一斜面及此至少一第二斜面可為鏡像對稱。In some applications, the inclined surface 322 may be a surface of the carrier 300, and this surface is inclined with respect to the conveying direction 1. For example, the inclined surface 322 may be inclined with respect to a horizontal plane. In some embodiments, the inclined surface 322 is disposed on the first end 201 and / or the second end 202 of the carrier 300. For example, at least one first inclined surface may be disposed at the first end 201 and / or at least one second inclined surface may be disposed at the second end 202 of the carrier. The at least one first inclined surface and the at least one second inclined surface may be inclined in opposite directions. In particular, the at least one first inclined surface and the at least one second inclined surface may be mirror-symmetrical.

當載體300在傳送方向1中移動時，第一感測器可偵測到斜面322。基於傳送方向1及/或傾斜方向，由第一感測器所偵測之第一感測器及斜面322之間的距離係增加或減少。導件單元111之此一或多個主動磁性單元可控制，以在傳送方向中提供載體300之平順的傳送。特別是，可控制位於斜面之致動器。舉例來說，基於斜面所提供之變化的距離，藉由致動器提供之磁力可連續地增加或減少，以提供相鄰之數個致動器/數個磁性單元之間的載體之端部的平順轉變。特別是，在第3圖中，載體之左邊的斜面可在第一感測器產生偵測訊號。如果載體向上移動時，在第一感測器係同樣產生偵測訊號。 舉例為藉由減少致動器電流，控制器可減少致動器力，使得左側上之致動器不在載體「離開」致動器時施與懸浮力於載體上。When the carrier 300 moves in the transport direction 1, the first sensor may detect the inclined surface 322. Based on the transmission direction 1 and / or the tilt direction, the distance between the first sensor and the inclined surface 322 detected by the first sensor is increased or decreased. The one or more active magnetic units of the guide unit 111 are controllable to provide smooth transfer of the carrier 300 in the transfer direction. In particular, the actuator located on the inclined plane can be controlled. For example, based on the varying distance provided by the ramp, the magnetic force provided by the actuator can be continuously increased or decreased to provide the end of the carrier between adjacent actuators / magnetic units. Smooth transition. In particular, in Figure 3, the left side of the carrier can generate a detection signal at the first sensor. If the carrier moves upward, a detection signal is also generated in the first sensor system. For example, by reducing the actuator current, the controller can reduce the actuator force so that the actuator on the left side does not apply a suspension force to the carrier when the carrier "leaves" the actuator.

在第2A或2B圖之例子中，此一或多個第一感測器及導引結構係配置於幾何輪廓之相同側上。於其他例子中，如第3圖中舉例所示，此一或多個第一感測器及導引結構可配置於幾何輪廓之相反側上。特別是，此一或多個第一感測器及導引結構可配置，以定義用於載體之磁鐵結構的導引空間於其間。舉例來說，導引結構及特別是致動器可位於載體300之此一或多個第一磁鐵單元210之上方，及此一或多的第一感測器118可位於載體300之此一或多個第一磁鐵單元210之下方。In the example of FIG. 2A or 2B, the one or more first sensors and the guide structure are disposed on the same side of the geometric profile. In other examples, as shown in the example in FIG. 3, the one or more first sensors and the guide structure may be disposed on opposite sides of the geometric contour. In particular, the one or more first sensors and the guiding structure may be configured to define a guiding space for the magnet structure of the carrier therebetween. For example, the guide structure and particularly the actuator may be located above the one or more first magnet units 210 of the carrier 300, and the one or more first sensors 118 may be located at the one of the carrier 300 Or below the plurality of first magnet units 210.

第4A及B圖繪示根據此處所述實施例之用於載體410之非接觸傳送之設備400的示意圖。載體410可根據此處所述之實施例裝配。Figures 4A and B are schematic diagrams of a device 400 for non-contact transfer of a carrier 410 according to the embodiments described herein. The carrier 410 may be assembled according to the embodiments described herein.

設備400包括傳送配置，具有導引結構470。導引結構470包括數個主動磁性單元475、偵測幾何輪廓之此一或多個第一感測器(未繪示)、及跟根據本揭露之載體410。此一或多個第一感測器可裝配，以偵測此一或多個第一感測器及載體410之幾何輪廓之間的距離。設備400可更包括控制器，裝配以基於此一或多個第一感測器提供之偵測資料來選擇地控制此些主動磁性單元475之至少一主動磁性單元。根據此處所述之一些實施例，傳送配置可配置於真空系統之真空腔室中。真空腔室可為真空沈積腔室。然而，本揭露係不限於真空系統，及此處所述之載體及傳送配置可在大氣環境中應用。The device 400 includes a transfer configuration with a guide structure 470. The guiding structure 470 includes a plurality of active magnetic units 475, one or more first sensors (not shown) that detect geometric contours, and a carrier 410 according to the present disclosure. The one or more first sensors can be assembled to detect the distance between the one or more first sensors and the geometric contour of the carrier 410. The device 400 may further include a controller configured to selectively control at least one active magnetic unit of the active magnetic units 475 based on detection data provided by the one or more first sensors. According to some embodiments described herein, the transfer configuration may be configured in a vacuum chamber of a vacuum system. The vacuum chamber may be a vacuum deposition chamber. However, this disclosure is not limited to vacuum systems, and the carriers and transfer configurations described herein can be applied in atmospheric environments.

載體410可包括此一或多個第一磁鐵單元，裝配以與真空系統之導引結構470磁性互動來提供懸浮載體410之磁性懸浮力。此一或多個第一磁鐵單元可為第一被動磁性單元450。導引結構470可在載體410之傳送方向1中延伸，傳送方向1可為水平方向。導引結構470可包括此些主動磁性單元475。載體410可沿著導引結構470為可移動的。第一被動磁性單元450舉例為鐵磁材料棒，及導引結構470之此些主動磁性單元475可裝配，以用於提供第一磁性懸浮力來懸浮載體410。此處所述之用以懸浮的裝置係為用以提供非接觸力來懸浮舉例為載體410的裝置。The carrier 410 may include the one or more first magnet units, which are assembled to magnetically interact with the guide structure 470 of the vacuum system to provide a magnetic levitation force of the suspension carrier 410. The one or more first magnet units may be the first passive magnetic unit 450. The guiding structure 470 may extend in the conveying direction 1 of the carrier 410, and the conveying direction 1 may be a horizontal direction. The guiding structure 470 may include such active magnetic units 475. The carrier 410 may be movable along the guide structure 470. The first passive magnetic unit 450 is, for example, a rod of ferromagnetic material, and the active magnetic units 475 of the guiding structure 470 can be assembled to provide a first magnetic levitation force to suspend the carrier 410. The device for suspending described herein is a device for suspending, for example, the carrier 410 by providing a non-contact force.

根據一些實施例，傳送配置可更包括驅動結構480。驅動結構480可包括數個其他磁鐵單元，例如是其他主動磁性單元。載體410可包括一或多個第二磁鐵單元，裝配以與驅動結構480磁性作用。特別是，此一或多個第二磁鐵單元可為第二被動磁性單元460，舉例為鐵磁材料棒，以與驅動結構480之其他主動磁性單元485交互作用。According to some embodiments, the transfer configuration may further include a driving structure 480. The driving structure 480 may include several other magnet units, such as other active magnetic units. The carrier 410 may include one or more second magnet units, which are assembled to magnetically interact with the driving structure 480. In particular, the one or more second magnet units may be a second passive magnetic unit 460, such as a rod of ferromagnetic material, to interact with other active magnetic units 485 of the driving structure 480.

第4B圖繪示傳送配置之另一側視圖。在第4B圖中係繪示出此些主動磁性單元475之一個主動磁性單元。主動磁性單元係提供磁力，此磁力係與載體410之第一被動磁性單元450交互作用。舉例來說，第一被動磁性單元450可為鐵磁材料桿。桿可為載體410之一部份，連接於支撐結構412。支撐結構412可藉由載體410之主體提供。此桿或第一被動磁性單元分別可與用以支撐基板10的支撐結構412一體成型。幾何輪廓可貼附於第一被動磁性單元450或可藉由第一被動磁性單元450提供。載體410可更包括第二被動磁性單元460，舉例為其他桿。此其他桿可連接於載體410。此桿或第二被動磁性單元分別可亦與支撐結構412一體成型。Figure 4B shows another side view of the transfer configuration. An active magnetic unit of the active magnetic units 475 is shown in FIG. 4B. The active magnetic unit provides a magnetic force that interacts with the first passive magnetic unit 450 of the carrier 410. For example, the first passive magnetic unit 450 may be a ferromagnetic material rod. The rod may be part of the carrier 410 and connected to the support structure 412. The support structure 412 may be provided by the main body of the carrier 410. This rod or the first passive magnetic unit may be integrally formed with the supporting structure 412 for supporting the substrate 10, respectively. The geometric outline may be attached to the first passive magnetic unit 450 or may be provided by the first passive magnetic unit 450. The carrier 410 may further include a second passive magnetic unit 460, such as other rods. This other rod may be connected to the carrier 410. This rod or the second passive magnetic unit may also be integrally formed with the support structure 412, respectively.

技術名稱「被動磁性單元」係於此使用來與「主動」磁性單元之概念有所區別。被動磁性單元可意指為具有不面臨主動控制或調整之磁性性質的一元件，至少不在傳送配置之操作期間面臨主動控制或調整之磁性性質的一元件。舉例來說，被動磁性單元舉例為載體之桿或其他桿，被動磁性單元之磁性性質一般係不在載體移動通過真空腔室或真空系統期間面臨主動控制。根據可與此處所述其他實施例結合之一些實施例，傳送配置之控制器係不配置來控制被動磁性單元。被動磁性單元可適用於產生磁場，舉例為靜態磁場。被動磁性單元可不裝配來產生可調整的磁場。被動磁性單元可為例如是鐵磁材料之磁性材料、永久磁鐵、或可具有永久磁性性質。The technical name "passive magnetic unit" is used here to distinguish it from the concept of "active" magnetic unit. A passive magnetic unit may mean an element that has magnetic properties that do not face active control or adjustment, at least one that does not face magnetic properties that are actively controlled or adjusted during operation of the transfer configuration. For example, passive magnetic units are exemplified by rods of a carrier or other rods. The magnetic properties of passive magnetic units generally do not face active control during the movement of the carrier through a vacuum chamber or vacuum system. According to some embodiments that may be combined with other embodiments described herein, the controller of the transmission configuration is not configured to control the passive magnetic unit. Passive magnetic units can be adapted to generate a magnetic field, such as a static magnetic field. The passive magnetic unit may be unassembled to generate an adjustable magnetic field. The passive magnetic unit may be a magnetic material such as a ferromagnetic material, a permanent magnet, or may have permanent magnetic properties.

根據此處所述之數個實施例，此些主動磁性單元475提供磁力於第一被動磁性單元450及載體410上。此些主動磁性單元475懸浮載體410。其他主動磁性單元485可於真空腔室中舉例為沿著傳送方向1驅動載體410。當載體410由此些主動磁性單元475懸浮時，此些其他主動磁性單元485形成驅動結構來在傳送方向1中移動載體410。此些主動磁性單元475係位於載體410之上方。其他主動磁性單元485可與第二被動磁性單元460交互作用，以提供沿著傳送方向1之力。舉例來說，第二被動磁性單元460可包括數個永久磁鐵，配置有交替的極性。第二被動磁性單元460之生成的磁場可與此些其他主動磁性單元485交互作用，以在載體410懸浮時移動載體410。According to several embodiments described herein, the active magnetic units 475 provide magnetic force on the first passive magnetic unit 450 and the carrier 410. These active magnetic units 475 suspend the carrier 410. Other active magnetic units 485 can be exemplified in the vacuum chamber to drive the carrier 410 along the conveying direction 1. When the carrier 410 is suspended by these active magnetic units 475, these other active magnetic units 485 form a driving structure to move the carrier 410 in the transport direction 1. These active magnetic units 475 are located above the carrier 410. The other active magnetic unit 485 may interact with the second passive magnetic unit 460 to provide a force in the transmission direction 1. For example, the second passive magnetic unit 460 may include several permanent magnets configured with alternating polarities. The magnetic field generated by the second passive magnetic unit 460 may interact with these other active magnetic units 485 to move the carrier 410 when the carrier 410 is suspended.

為了利用此些主動磁性單元475懸浮載體410及/或利用此些其他主動磁性單元485移動載體410，主動磁性單元可控制，以提供可調整的磁場。可調整的磁場可為靜態或動態磁場。根據可與此處所述其他實施例結合之數個實施例，主動磁性單元係裝配以用於產生磁場來提供沿著垂直方向3延伸的磁性懸浮力。根據可與此處所述進一步實施例結合之其他實施例，主動磁性單元可裝配以用於提供沿著橫向方向2延伸的磁力。如此處所述之主動磁性單元可為或包括一元件，此元件係選自由電磁裝置、螺線管、線圈、超導磁鐵、或其之任何組合所組成的群組。In order to use these active magnetic units 475 to suspend the carrier 410 and / or to use these other active magnetic units 485 to move the carrier 410, the active magnetic units can be controlled to provide an adjustable magnetic field. The adjustable magnetic field can be a static or dynamic magnetic field. According to several embodiments that can be combined with other embodiments described herein, the active magnetic unit is assembled for generating a magnetic field to provide a magnetic levitation force extending in the vertical direction 3. According to other embodiments that can be combined with the further embodiments described herein, the active magnetic unit can be assembled for providing a magnetic force extending in the lateral direction 2. The active magnetic unit described herein may be or include an element selected from the group consisting of an electromagnetic device, a solenoid, a coil, a superconducting magnet, or any combination thereof.

此處所述之數個實施例係有關於非接觸懸浮、傳送及/或對準載體、基板及/或遮罩。本揭露係意指可包括群組之一或多個元件的載體。此群組由支撐基板之載體、沒有基板之載體、基板、或由支撐件支撐之基板所組成。本揭露通篇所使用之名稱「非接觸」可理解為舉例為載體及基板之重量不由機械接觸或機械力支承，但係由磁力支承的含義。特別是，載體係利用磁力支承於懸浮或浮動狀態，而取代機械力。舉例來說，此處所述之傳送配置可不具有支撐載體之重量的機械裝置，機械裝置例如是機械軌道。於一些應用中，在真空系統中之載體懸浮及舉例為運動期間，載體及剩餘的設備之間可沒有任何機械接觸。Several embodiments described herein relate to non-contact levitation, transfer, and / or alignment of a carrier, substrate, and / or mask. This disclosure means a carrier that may include one or more elements of a group. This group consists of a carrier supporting a substrate, a carrier without a substrate, a substrate, or a substrate supported by a support. The name "non-contact" used throughout this disclosure can be understood as an example in which the weight of the carrier and the substrate is not supported by mechanical contact or mechanical force, but means by magnetic force. In particular, the carrier uses magnetic force to support the suspension or floating state instead of mechanical force. For example, the transfer configuration described herein may not have a mechanical device that supports the weight of the carrier, such as a mechanical track. In some applications, there is no mechanical contact between the carrier and the remaining equipment during suspension of the carrier in the vacuum system and, for example, movement.

根據本揭露之數個實施例，懸浮意指為物體之一狀態，其中物體係浮動而沒有機械接觸或支撐。再者，移動物體意指提供驅動力，驅動力舉例為在一方向的力，此方向不同於懸浮力的方向，其中物體係從一位置移動至另一個不同的位置。舉例來說，例如是載體之物體可懸浮，也就是藉由抵抗重力之力可懸浮，及可在懸浮時在一方向中移動，此方向不同於平行於重力之方向。According to several embodiments of the disclosure, levitating means a state of an object in which the object system floats without mechanical contact or support. Moreover, moving an object means providing a driving force. The driving force is, for example, a force in one direction, which is different from the direction of the levitation force. The object system moves from one position to another. For example, an object such as a carrier can be suspended, that is, can be suspended by the force resisting gravity, and can move in a direction when suspended, which is different from the direction parallel to gravity.

根據此處所述之數個實施例之非接觸懸浮及傳送載體係有利的，沒有粒子係在傳送或對準載體期間因載體及傳送配置之區段之間的機械接觸產生。此傳送配置之區段例如是機械軌道。因此，此處所述之數個實施例係提供而用於改善沈積於基板上之層的純度及均勻性，特別是因為粒子產生係在使用非接觸懸浮、傳送及/或對準時減到最小。The non-contact suspension and transfer carriers according to the several embodiments described herein are advantageous in that no particles are generated during the transfer or alignment of the carrier due to mechanical contact between the carrier and the section of the transfer configuration. The section of this transfer configuration is, for example, a mechanical track. Therefore, several embodiments described herein are provided to improve the purity and uniformity of the layer deposited on the substrate, especially because particle generation is minimized when using non-contact suspension, transfer and / or alignment .

第5圖繪示根據此處所述實施例之用於基板處理之系統500的示意圖。可為真空系統之系統500可裝配，以用於沈積舉例為有機材料之一或多層於基板10上。FIG. 5 illustrates a schematic diagram of a system 500 for substrate processing according to the embodiments described herein. A system 500, which may be a vacuum system, may be assembled for depositing one or more layers of organic materials, for example, on a substrate 10.

系統500包括沈積腔室、根據此處所述實施例之載體520、及傳送配置510。沈積腔室例如是真空腔室502。傳送配置510係裝配，以用於在沈積腔室中傳送載體520。於一些應用中，系統500包括一或多個材料沈積源580於沈積腔室中。載體520可裝配，以在沈積製程期間支承基板10及選擇地支承遮罩20。此沈積製程例如是真空沈積製程。系統500可裝配，以用於蒸發舉例為用於製造OLED裝置之有機材料。於另一例子中，系統500可裝配以用於CVD或PVD，PVD例如是濺射沈積。The system 500 includes a deposition chamber, a carrier 520 according to embodiments described herein, and a transfer configuration 510. The deposition chamber is, for example, a vacuum chamber 502. The transfer configuration 510 is assembled for transferring a carrier 520 in a sedimentation chamber. In some applications, the system 500 includes one or more material deposition sources 580 in a deposition chamber. The carrier 520 can be assembled to support the substrate 10 and optionally the shield 20 during the deposition process. This deposition process is, for example, a vacuum deposition process. The system 500 can be assembled for evaporation of organic materials, such as those used to make OLED devices. In another example, the system 500 may be equipped for CVD or PVD, such as sputtering deposition.

於一些應用中，此一或多個材料沈積源580可為蒸發源，特別是用以沈積一或多個有機材料於基板上之蒸發源，以形成OLED裝置之層。用以舉例為在層沈積期間支撐基板10之載體520可沿著傳送路徑傳送至沈積腔室中及通過沈積腔室，及特別是通過沈積區域。傳送路徑例如是線性傳送路徑。In some applications, the one or more material deposition sources 580 may be evaporation sources, in particular evaporation sources for depositing one or more organic materials on a substrate to form a layer of an OLED device. By way of example, the carrier 520 supporting the substrate 10 during layer deposition may be transferred into and through the deposition chamber along the transfer path, and particularly through the deposition area. The transmission path is, for example, a linear transmission path.

材料可從此一或多個材料沈積源580在發射方向中朝向沈積區域射出。將塗佈之基板10係位在沈積區域中。舉例來說，此一或多個材料沈積源580可提供接線源，具有數個開孔及/或噴嘴。此些開孔及/或噴嘴係配置成沿著此一或多個材料沈積源580之長度的至少一線。材料可射出而通過此開孔及/或噴嘴。Material may be ejected from this one or more material deposition sources 580 toward the deposition area in an emission direction. The coated substrate 10 is positioned in a deposition area. For example, the one or more material deposition sources 580 may provide a wiring source with several openings and / or nozzles. The openings and / or nozzles are configured along at least one line along the length of the one or more material deposition sources 580. Material can be ejected through this opening and / or nozzle.

如第5圖中所示，其他腔室可設置而相鄰於真空腔室502。真空腔室502可藉由閥與相鄰的腔室分隔。閥具有閥殼體504及閥單元506。在具有基板10於其上之載體520如箭頭所示***真空腔室502之後，可關閉閥單元506。舉例為利用真空幫浦產生技術真空，真空腔室502中之大氣可獨立地控制。真空幫浦連接於真空腔室502。As shown in FIG. 5, other chambers may be provided adjacent to the vacuum chamber 502. The vacuum chamber 502 may be separated from an adjacent chamber by a valve. The valve includes a valve housing 504 and a valve unit 506. After the carrier 520 having the substrate 10 thereon is inserted into the vacuum chamber 502 as shown by the arrow, the valve unit 506 may be closed. For example, to generate a technical vacuum using a vacuum pump, the atmosphere in the vacuum chamber 502 can be independently controlled. A vacuum pump is connected to the vacuum chamber 502.

根據一些實施例，載體520及基板10在沈積材料之沈積期間係為靜態或動態。根據此處所述之一些實施例，可提供動態沈積製程而舉例為用於製造OLED裝置。According to some embodiments, the carrier 520 and the substrate 10 are static or dynamic during the deposition of the deposition material. According to some embodiments described herein, a dynamic deposition process may be provided and exemplified for manufacturing OLED devices.

於一些應用中，系統500可包括一或多個傳送路徑，延伸通過真空腔室502。載體520可裝配，以用於沿著此一或多個傳送路徑傳送而舉例為通過此一或多個材料沈積源580。雖然在第5圖中係以箭頭範例地繪示出一個傳送路徑，將理解的是，本揭露不以此為限，及二或多個傳送路徑可提供。舉例來說，至少兩個傳送路徑可實質上平行於彼此配置來傳送個別之載體。此一或多個材料沈積源580可配置於此兩個傳送路徑之間。In some applications, the system 500 may include one or more transfer paths extending through the vacuum chamber 502. The carrier 520 may be assembled for transport along the one or more transport paths, for example by the one or more material deposition sources 580. Although in FIG. 5, one transmission path is exemplarily illustrated by arrows, it will be understood that the present disclosure is not limited thereto, and two or more transmission paths may be provided. For example, at least two transfer paths may be configured substantially parallel to each other to transfer individual carriers. The one or more material deposition sources 580 may be disposed between the two transfer paths.

第6圖繪示根據此處所述其他實施例之用以處理系統600的示意圖，此處理例如是真空處理。FIG. 6 shows a schematic diagram of a processing system 600 according to other embodiments described herein, such as a vacuum process.

系統600包括二或多個處理區域及根據本揭露之傳送配置660。根據本揭露之傳送配置660係裝配，以用於相繼地傳送載體601至此二或多個處理區域。載體601支撐基板10及選擇之遮罩。舉例來說，傳送配置660可裝配，以用於沿著傳送方向1傳送載體601通過此二或多個處理區域來進行基板處理。也就是說，相同之載體係使用來傳送基板10通過數個處理區域。特別是，在一處理區域中之基板處理與一接續處理區域中之基板處理之間，基板10係不從載體601移除，也就是說，基板係維持在相同載體上來進行二或多個基板處理程序。根據一些實施例，載體601可根據此處所述之實施例裝配。傳送配置660可如舉例為第4A及B圖選擇地或替代地裝配。The system 600 includes two or more processing regions and a transfer configuration 660 in accordance with the present disclosure. The transfer configuration 660 according to the present disclosure is assembled for successive transfer of the carrier 601 to the two or more processing areas. The carrier 601 supports the substrate 10 and a selected mask. For example, the transfer configuration 660 can be assembled for transferring substrates 601 through the two or more processing regions along the transfer direction 1 for substrate processing. That is, the same carrier is used to transport the substrate 10 through several processing areas. In particular, between the substrate processing in a processing area and the substrate processing in a subsequent processing area, the substrate 10 is not removed from the carrier 601, that is, the substrate is maintained on the same carrier for two or more substrates. Handler. According to some embodiments, the carrier 601 may be assembled according to the embodiments described herein. The transfer configuration 660 may be optionally or alternatively assembled for example to Figures 4A and B.

如第6圖中所範例性繪示，此二或多個處理區域可包括第一沈積區域608及第二沈積區域612。傳送區域610可選擇地提供於第一沈積區域608及第二沈積區域612之間。此些區域例如是此二或多個處理區域及傳送區域，可提供於一個真空腔室中。或者，此些區域可提供於彼此連接之不同真空腔室中。舉例來說，各真空腔室可提供一區域。特別是，第一真空腔室可提供第一沈積區域608，第二真空腔室可提供傳送區域610，及第三真空腔室可提供第二沈積區域612。於一些應用中，第一真空腔室及第三真空腔室可意指為「沈積腔室」。第二真空腔室可意指為「處理腔室」。其他真空腔室或區域可提供而相鄰於繪示在第6圖之例子中所示的區域。As exemplarily shown in FIG. 6, the two or more processing regions may include a first deposition region 608 and a second deposition region 612. The transfer region 610 is optionally provided between the first deposition region 608 and the second deposition region 612. These areas are, for example, the two or more processing areas and the transfer area, which can be provided in one vacuum chamber. Alternatively, such areas may be provided in different vacuum chambers connected to each other. For example, each vacuum chamber may provide an area. In particular, the first vacuum chamber may provide a first deposition region 608, the second vacuum chamber may provide a transfer region 610, and the third vacuum chamber may provide a second deposition region 612. In some applications, the first vacuum chamber and the third vacuum chamber may be referred to as "deposition chambers". The second vacuum chamber may be referred to as a "processing chamber". Other vacuum chambers or areas can be provided adjacent to the area shown in the example shown in FIG.

真空腔室或區域可藉由閥與相鄰區域分隔。閥具有閥殼體604及閥單元605。在具有基板10於其上之載體601***例如是第二沈積區域612之一區域中之後，可關閉閥單元605。舉例為藉由利用連接於區域之真空幫浦產生技術真空及/或藉由加入一或多個處理氣體於舉例為第一沈積區域608及/或第二沈積區域612中，區域中之大氣可獨立地控制。例如是線性傳送路徑之傳送路徑可提供，以傳送具有基板10於其上之載體601至區域中、通過區域及離開區域。傳送路徑可至少部份地延伸通過此二或多個處理區域及選擇地通過傳送區域610，此二或多個處理區域例如是第一沈積區域608及第二沈積區域612。The vacuum chamber or area can be separated from adjacent areas by a valve. The valve includes a valve housing 604 and a valve unit 605. After the carrier 601 having the substrate 10 thereon is inserted into an area such as one of the second deposition areas 612, the valve unit 605 can be closed. For example, by using a vacuum pump generation technology connected to the area to vacuum and / or by adding one or more process gases to the first deposition area 608 and / or the second deposition area 612, the atmosphere in the area may be Control independently. A transfer path, such as a linear transfer path, may be provided to transfer the carrier 601 having the substrate 10 thereon into a region, a passing region, and a leaving region. The transfer path may extend at least partially through the two or more processing regions and selectively through the transfer region 610. The two or more processing regions are, for example, the first deposition region 608 and the second deposition region 612.

系統600可包括傳送區域610。於一些實施例中，傳送區域610可省略。傳送區域610可藉由旋轉模組、過渡模組、或其之組合提供。第6圖繪示旋轉模組及過渡模組之組合。在旋轉模組中，軌道配置及配置於其上之載體可繞著一旋轉軸旋轉，此旋轉軸例如是垂直旋轉軸。舉例來說，載體可從系統600之左側傳送至系統600之右側，或反之亦然。過渡模組可包括交叉軌道，使得載體可在不同的方向中傳送通過過渡模組，不同的方向舉例為彼此垂直之方向。The system 600 may include a transmission area 610. In some embodiments, the transmission area 610 may be omitted. The transmission area 610 may be provided by a rotation module, a transition module, or a combination thereof. FIG. 6 shows a combination of a rotation module and a transition module. In the rotation module, the track and the carrier disposed thereon can rotate around a rotation axis, and the rotation axis is, for example, a vertical rotation axis. For example, the carrier may be transferred from the left side of the system 600 to the right side of the system 600, or vice versa. The transition module may include cross rails, so that the carrier can be transmitted through the transition module in different directions, and the different directions are exemplified by directions perpendicular to each other.

在沈積區域中，可設置一或多個沈積源。沈積區域例如是第一沈積區域608及第二沈積區域612。舉例來說，第一沈積源630可設置在第一沈積區域608中。第二沈積源650可設置在第二沈積區域612中。此一或多個沈積源可為蒸發源，裝配以用於沈積一或多個有機層於基板10上，以形成用於OLED裝置之有機層堆疊。In the sedimentary area, one or more deposition sources may be provided. The deposition regions are, for example, the first deposition region 608 and the second deposition region 612. For example, a first deposition source 630 may be disposed in the first deposition region 608. A second deposition source 650 may be disposed in the second deposition region 612. The one or more deposition sources may be evaporation sources, which are assembled for depositing one or more organic layers on the substrate 10 to form an organic layer stack for an OLED device.

第7圖繪示根據此處所述實施例之用於在沈積系統中之載體的非接觸傳送的方法700的流程圖，沈積系統例如是真空系統。方法700可利用根據本揭露之載體、設備、及系統。FIG. 7 shows a flowchart of a method 700 for non-contact transfer of a carrier in a sedimentation system according to an embodiment described herein. The deposition system is, for example, a vacuum system. Method 700 may utilize carriers, devices, and systems in accordance with the present disclosure.

方法700包括在方塊710中偵測沈積系統之感測器及在沿著傳送方向傳送之載體之端部的幾何輪廓之間的距離，及在方塊720中當已偵測之距離表示出幾何輪廓的改變時，控制真空系統之至少一主動磁性單元。於一些應用中，方法可在方塊730中在已偵測之距離表示出幾何輪廓之改變時，決定出舉例為真空系統中之載體的端部的位置。Method 700 includes detecting the distance between the geometrical contour of the sensor of the deposition system and the end of the carrier conveyed along the conveying direction in block 710, and indicating the geometrical contour when the detected distance in block 720 When changing, control at least one active magnetic unit of the vacuum system. In some applications, the method may determine the position of the end of the carrier in a vacuum system when the detected distance indicates a change in the geometric profile in block 730.

當載體300在傳送方向1中移動時，距離係因變化之幾何輪廓改變。舉例來說，距離感測器及幾何輪廓之斜面之間的距離係根據傳送方向1及/或斜面方向增加或減少。於一實施例中，流經此至少一主動磁性單元的電流可在距離感測器及幾何輪廓之間的距離減少時減少。再者，流經此至少一主動磁性單元的電流可在距離感測器及幾何輪廓之間的距離增加時增加。然而，本揭露不以此為限，及電流可基於欲減少或避免不想要的力來增加或減少。When the carrier 300 moves in the transport direction 1, the distance changes due to the changed geometric profile. For example, the distance between the distance sensor and the inclined plane of the geometric contour is increased or decreased according to the transmission direction 1 and / or the inclined plane direction. In one embodiment, the current flowing through the at least one active magnetic unit can be reduced when the distance between the distance sensor and the geometric contour decreases. Furthermore, the current flowing through the at least one active magnetic unit may increase as the distance between the distance sensor and the geometric profile increases. However, this disclosure is not limited thereto, and the current may be increased or decreased based on the desire to reduce or avoid unwanted forces.

於另一實施例中，舉例來說，如果感測器係配置在如第3圖之例子中所示的幾何輪廓之下方時，流經此至少一主動磁性單元的電流可在距離感測器及幾何輪廓之間的距離增加時減少。 再者，流經此至少一主動磁性單元的電流可在距離感測器及幾何輪廓之間的距離減少時增加。In another embodiment, for example, if the sensor is disposed below the geometric contour as shown in the example in FIG. 3, the current flowing through the at least one active magnetic unit may be in the distance sensor. As the distance between geometric contours increases, it decreases. Furthermore, the current flowing through the at least one active magnetic unit may increase when the distance between the distance sensor and the geometric contour decreases.

根據另一方面，用以在沈積系統中非接觸傳送載體之方法包括偵測在傳送方向中傳送的載體之一端部的至少一材料特徵或性質，及在已偵測之至少一材料特徵或性質表示出改變時，控制沈積系統之至少一主動磁性單元。此改變例如是材料改變及/或磁性、電性、或光學改變。此至少一材料特徵或性質可為磁性、光學、或電性特徵性質。於一些應用中，此方法可在一端接近或離開導件單元時偵測配置於載體之一或多端的磁性材料。導件單元可選擇地控制，以在相鄰之導件單元之間提供平滑的傳送。According to another aspect, a method for contactlessly conveying a carrier in a sunken system includes detecting at least one material feature or property of one end of the carrier being conveyed in a conveyance direction, and at least one material feature or property detected It is shown that when changed, at least one active magnetic unit of the deposition system is controlled. This change is, for example, a material change and / or a magnetic, electrical, or optical change. The at least one material characteristic or property may be a magnetic, optical, or electrical characteristic property. In some applications, this method can detect magnetic material disposed on one or more ends of the carrier when one end approaches or leaves the guide unit. The guide units are optionally controlled to provide smooth transfer between adjacent guide units.

根據此處所述之數個實施例，用以在沈積系統中非接觸傳送載體之方法可利用電腦程式、軟體、電腦軟體產品及相關之控制器執行。相關之控制器可具有中央處理器(CPU)、記憶體、使用者介面、及輸入及輸出裝置，與載體、設備及/或系統之對應元件通訊。According to several embodiments described herein, the method for contactless transmission of a carrier in a sunken system can be performed using computer programs, software, computer software products, and related controllers. The related controller may have a central processing unit (CPU), memory, user interface, and input and output devices to communicate with corresponding components of the carrier, device, and / or system.

根據本揭露之實施例，載體具有可偵測裝置，可偵測裝置具有可由一或多個感測器偵測之變化特徵。於一實施例中，載體係提供而具有變化之幾何輪廓於載體的一端部，此變化也就是非固定。於另一實施例中，載體係提供而具有不同性質之數個區段，例如是不同材料之數個區段。沈積系統之傳送配置可偵測變化，及決定相對於傳送配置之載體的一位置，及特別是載體之一或多端之位置。基於已偵測的變化及載體之位置或從其偏離之端部，可控制裝配以用於載體之非接觸傳送的傳送配置。舉例來說，載體之一或多個邊緣的位置可決定，及傳送配置之一或多個主動磁性單元可選擇地控制。特別是，位於載體之邊緣及/或邊緣部份所靠近之主動磁性單元可控制。在傳送方向中之載體的平順傳送可達成。因載體之不穩定傳送所致使的基板破裂及/或粒子之產生可減少或甚至避免。According to the embodiment of the disclosure, the carrier has a detectable device, and the detectable device has a change characteristic that can be detected by one or more sensors. In one embodiment, the carrier is provided with a changed geometric profile at one end of the carrier, and the change is not fixed. In another embodiment, the carrier is provided with sections having different properties, such as sections with different materials. The transport configuration of the deposition system can detect changes and determine a position relative to the carrier of the transport configuration, and in particular the position of one or more ends of the carrier. Based on the detected changes and the position of the carrier or the end that deviates from it, the transfer configuration that is assembled for contactless transfer of the carrier can be controlled. For example, the position of one or more edges of the carrier may be determined, and one or more active magnetic units of the transfer configuration may be selectively controlled. In particular, an active magnetic unit located near the edge and / or edge portion of the carrier can be controlled. Smooth transfer of the carrier in the transfer direction can be achieved. Substrate rupture and / or particle generation due to unstable transfer of the carrier can be reduced or even avoided.

綜上所述，雖然本發明已以實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。In summary, although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.

1‧‧‧傳送方向1‧‧‧ transfer direction

2‧‧‧橫向方向2‧‧‧Horizontal

3‧‧‧垂直方向3‧‧‧ vertical

10‧‧‧基板10‧‧‧ substrate

20‧‧‧遮罩20‧‧‧Mask

100、200、200’、300、410、520、601‧‧‧載體100, 200, 200 ’, 300, 410, 520, 601‧‧‧ carriers

110、470‧‧‧導引結構110, 470‧‧‧Guide structure

111‧‧‧導件單元111‧‧‧Guide unit

112‧‧‧致動器112‧‧‧Actuator

114‧‧‧控制器114‧‧‧controller

116‧‧‧距離感測器116‧‧‧Distance Sensor

118‧‧‧第一感測器118‧‧‧first sensor

201‧‧‧第一端201‧‧‧ the first end

202‧‧‧第二端202‧‧‧ the second end

205‧‧‧主體205‧‧‧Subject

210‧‧‧第一磁鐵單元210‧‧‧First magnet unit

220‧‧‧幾何輪廓220‧‧‧ geometric contour

220’‧‧‧可偵測裝置220’‧‧‧ Detectable device

222‧‧‧凹槽222‧‧‧Groove

222’‧‧‧區段Section 222’‧‧‧

322‧‧‧斜面322‧‧‧ bevel

400‧‧‧設備400‧‧‧ Equipment

412‧‧‧支撐結構412‧‧‧ support structure

450‧‧‧第一被動磁性單元450‧‧‧The first passive magnetic unit

460‧‧‧第二被動磁性單元460‧‧‧Second Passive Magnetic Unit

475‧‧‧主動磁性單元475‧‧‧active magnetic unit

480‧‧‧驅動結構480‧‧‧Drive Structure

485‧‧‧其他主動磁性單元485‧‧‧Other Active Magnetic Unit

500、600‧‧‧系統500, 600‧‧‧ system

502‧‧‧真空腔室502‧‧‧vacuum chamber

504、604‧‧‧閥殼體504, 604‧‧‧valve housing

506、605‧‧‧閥單元506, 605‧‧‧valve units

510‧‧‧傳送配置510‧‧‧Transfer configuration

580‧‧‧材料沈積源580‧‧‧ material deposition source

608‧‧‧第一沈積區域608‧‧‧First deposition area

610‧‧‧傳送區域610‧‧‧Transfer Area

612‧‧‧第二沈積區域612‧‧‧Second deposition area

630‧‧‧第一沈積源630‧‧‧First sedimentary source

650‧‧‧第二沈積源650‧‧‧Second sedimentary source

660‧‧‧傳送配置660‧‧‧Transfer configuration

700‧‧‧方法700‧‧‧ Method

710、720、730‧‧‧方塊710, 720, 730‧‧‧ blocks

為了使本揭露的上述特徵可詳細地瞭解，簡要摘錄於上之本揭露之更特有之說明可參照數個實施例。所附之圖式係有關於本揭露之數個實施例且係說明於下方： 第1圖繪示載體及導引結構的示意圖； 第2A圖繪示根據此處所述實施例之用於在沈積系統中非接觸傳送之載體的示意圖； 第2B圖繪示根據此處所述其他實施例之用於在沈積系統中非接觸傳送之載體的示意圖； 第3圖繪示根據此處所述再其他實施例之用於在沈積系統中非接觸傳送之載體的示意圖； 第4A及B圖繪示根據此處所述實施例之用於載體之非接觸傳送之設備的示意圖； 第5圖繪示根據此處所述實施例之用於基板處理之系統的示意圖； 第6圖繪示根據此處所述其他實施例之用於基板處理之系統的示意圖；以及 第7圖繪示根據此處所述實施例之用於在沈積系統中之載體的非接觸傳送之方法的流程圖。In order to make the above-mentioned features of the present disclosure understandable in detail, a more specific description briefly extracted from the above disclosure may refer to several embodiments. The attached drawings are related to several embodiments of the present disclosure and are described below: Figure 1 shows a schematic diagram of a carrier and a guide structure; Figure 2A shows Schematic diagram of a carrier non-contact transport in a deposition system; FIG. 2B shows a schematic diagram of a carrier for non-contact transport in a sedimentation system according to other embodiments described herein; FIG. Schematic diagram of a carrier for non-contact transfer in a sunken system in other embodiments; Figures 4A and B illustrate schematic diagrams of a device for non-contact transfer of a carrier according to the embodiments described herein; Figure 5 illustrates Schematic diagram of a system for substrate processing according to the embodiments described herein; FIG. 6 illustrates a schematic diagram of a system for substrate processing according to other embodiments described herein; and FIG. The flowchart of the method for contactless transmission of the carrier in the sedimentation system according to the embodiment is described.

Claims (20)

一種用於在一沈積系統中非接觸傳送之載體，包括： 一或多個第一磁鐵單元，沿著該載體之一傳送方向設置；以及 一可偵測裝置，具有一幾何輪廓，配置於該載體之一端部及沿著該傳送方向變化。A carrier for non-contact conveyance in a deposition system includes: one or more first magnet units disposed along one of the carrier conveying directions; and a detectable device having a geometric profile disposed on the carrier One end of the carrier changes along the conveying direction. 一種用於在一沈積系統中非接觸傳送之載體，包括： 一或多個第一磁鐵單元，沿著該載體之一傳送方向設置；以及 一可偵測裝置，位於該載體之一端部，其中該可偵測裝置具有不同材料性質之二或多個區段，沿著該傳送方向配置。A carrier for non-contact transfer in a deposition system includes: one or more first magnet units disposed along one of the carrier transfer directions; and a detectable device located at one end of the carrier, wherein The detectable device has two or more sections of different material properties and is arranged along the conveying direction. 如申請專利範圍第1或2項所述之載體，其中該可偵測裝置係藉由該沈積系統之一或多個第一感測器為可偵測的，以決定該沈積系統中之該載體的一位置。The carrier according to item 1 or 2 of the patent application scope, wherein the detectable device is detectable by one or more first sensors of the deposition system to determine the A position of the carrier. 如申請專利範圍第1或2項所述之載體，其中該可偵測裝置係藉由該沈積系統之一或多個第一感測器為可偵測的，使得該載體之一或多個端的一位置可決定。The carrier according to item 1 or 2 of the patent application scope, wherein the detectable device is detectable by one or more first sensors of the deposition system, so that one or more of the carriers A position of the end can be determined. 如申請專利範圍第3項所述之載體，其中該可偵測裝置係配置，以面對該一或多個第一感測器。The carrier according to item 3 of the patent application scope, wherein the detectable device is configured to face the one or more first sensors. 如申請專利範圍第1或2項所述之載體，其中該可偵測裝置在該傳送方向中延伸該載體之整個長度。The carrier according to item 1 or 2 of the patent application scope, wherein the detectable device extends the entire length of the carrier in the transmission direction. 如申請專利範圍第1項所述之載體，其中該幾何輪廓包括一或多個塑形元件。The carrier as described in claim 1, wherein the geometric contour includes one or more shaping elements. 如申請專利範圍第7項所述之載體，其中該一或多個塑形元件係選自於由一凹槽、一不連續處(discontinuity)、一階級、一斜面(inclination)、及其任何組合所組成的群組。The carrier according to item 7 of the scope of patent application, wherein the one or more shaping elements are selected from a groove, a discontinuity, a class, an inclination, and any A group of groups. 如申請專利範圍第8項所述之載體，其中該斜面係為相對於該傳送方向傾斜之一表面。The carrier according to item 8 of the application, wherein the inclined surface is a surface inclined with respect to the conveying direction. 如申請專利範圍第7至9項之任一者所述之載體，其中該載體包括一第一端及一第二端，該第二端沿著該傳送方向相反於該第一端，其中該一或多個塑形元件係配置於該第一端及/或該第二端。The carrier according to any one of claims 7 to 9, wherein the carrier includes a first end and a second end, and the second end is opposite to the first end along the transmission direction, wherein the One or more shaping elements are disposed at the first end and / or the second end. 如申請專利範圍第1項所述之載體，其中該幾何輪廓包括一或多塑形元件，配置於該載體之一第一端及/或相反於該第一端之一第二端，使得該載體之該第一端及/或該第二端的位置可決定。The carrier according to item 1 of the scope of patent application, wherein the geometrical contour includes one or more shaping elements, which are arranged on a first end of the carrier and / or opposite to a second end of the first end, such that the The position of the first end and / or the second end of the carrier may be determined. 如申請專利範圍第2項所述之載體，其中該二或多個區段包括至少一第一區段及至少一第二區段，該至少一第一區段具有一第一材料性質，該至少一第二區段具有一第二材料性質，其中該第一材料性質及該第二材料性質係為複數個磁性性質、複數個電性性質、或複數個光學性質。The carrier according to item 2 of the scope of patent application, wherein the two or more sections include at least a first section and at least a second section, the at least one first section has a first material property, and The at least one second section has a second material property, wherein the first material property and the second material property are a plurality of magnetic properties, a plurality of electrical properties, or a plurality of optical properties. 如申請專利範圍第12項所述之載體，其中該載體包括一第一端及一第二端，該第二端沿著該傳送方向相反於該第一端，其中該至少一第一區段係配置於該第一端。The carrier according to item 12 of the application, wherein the carrier includes a first end and a second end, the second end is opposite to the first end along the transmission direction, and the at least one first section It is arranged at the first end. 一種用於一載體之非接觸傳送之設備，包括： 一導引結構，具有複數個主動磁性單元； 一或多個第一感測器；以及 如申請專利範圍第1或2項所述之載體。A device for non-contact transfer of a carrier, comprising: a guiding structure having a plurality of active magnetic units; one or more first sensors; and a carrier as described in item 1 or 2 of the scope of patent application . 如申請專利範圍第14項所述之設備，其中該一或多個第一感測器係裝配，以偵測該一或多個第一感測器及該載體之該幾何輪廓之間的一距離。The device according to item 14 of the scope of patent application, wherein the one or more first sensors are assembled to detect a distance between the one or more first sensors and the geometric contour of the carrier. distance. 如申請專利範圍第14項所述之設備，其中該一或多個第一感測器係為複數個霍爾感測器(Hall sensors)，裝配以偵測該可偵測裝置之一磁性材料。The device according to item 14 of the scope of patent application, wherein the one or more first sensors are a plurality of Hall sensors, and are assembled to detect a magnetic material of the detectable device . 如申請專利範圍第14項所述之設備，其中： 該一或多個第一感測器及該導引結構係配置於該幾何輪廓之相反側上。The device according to item 14 of the scope of patent application, wherein: the one or more first sensors and the guide structure are disposed on opposite sides of the geometric profile. 如申請專利範圍第14項所述之設備，其中該一或多個第一感測器及該導引結構係配置於該幾何輪廓之相同側上。The device according to item 14 of the scope of patent application, wherein the one or more first sensors and the guide structure are disposed on the same side of the geometric profile. 一種用於在一沈積系統中之一載體之非接觸傳送的方法，包括： 偵測該沈積系統之一感測器及在該載體之一端部的一幾何輪廓之間的一距離，該載體係在一傳送方向中傳送；以及 當已偵測之該距離係顯示出該幾何輪廓之一改變時，控制該沈積系統之至少一主動磁性單元。A method for non-contact transfer of a carrier in a deposition system, comprising: detecting a distance between a sensor of the deposition system and a geometric profile at one end of the carrier, the carrier being Transmitting in a conveying direction; and controlling at least one active magnetic unit of the deposition system when the detected distance shows a change in one of the geometric contours. 一種用於在一沈積系統中之一載體之非接觸傳送的方法，包括： 偵測該載體之一端部的至少一材料性質，該載體係在一傳送方向中傳送；以及 當偵測之該至少一材料性質顯示出一改變時，控制該沈積系統之至少一主動磁性單元。A method for non-contact transfer of a carrier in a deposition system, comprising: detecting at least one material property of an end of the carrier, the carrier being transported in a transport direction; and when detecting the at least When a material property shows a change, at least one active magnetic unit of the deposition system is controlled.
TW107137885A 2017-10-27 2018-10-26 Carrier for contactless transportation in a deposition system, apparatus for contactless transportation of a carrier, and method for contactless transportation of a carrier in a deposition system TW201932393A (en)

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Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5360470A (en) * 1992-07-06 1994-11-01 Fujitsu Limited Magnetic levitating transporting apparatus with a movable magnetic unit
KR100639004B1 (en) * 2005-01-05 2006-10-26 삼성에스디아이 주식회사 Device for sensing and transfering of tray
JP4594241B2 (en) * 2006-01-06 2010-12-08 東京エレクトロン株式会社 Substrate transport apparatus, substrate transport method, and computer program
KR101203890B1 (en) * 2009-02-23 2012-11-23 디씨티 주식회사 Transferring system
KR101386685B1 (en) * 2012-04-20 2014-04-24 세메스 주식회사 Apparatus for processing substrate
KR102015872B1 (en) * 2012-06-22 2019-10-22 삼성디스플레이 주식회사 Apparatus for organic layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
KR101959974B1 (en) * 2012-07-10 2019-07-16 삼성디스플레이 주식회사 Apparatus for organic layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
CN203307430U (en) * 2013-06-24 2013-11-27 芜湖真空科技有限公司 Trolley position detection device of vacuum film coating machine
DE102013011873B4 (en) * 2013-07-17 2015-10-08 Mecatronix Ag Positioning device and method for moving a substrate
EP2840600B1 (en) * 2013-08-22 2023-04-12 Robert Bosch GmbH Process station for a machine as well as control device and control method for controlling a movement in a process of a machine
KR20150052996A (en) * 2013-11-07 2015-05-15 삼성디스플레이 주식회사 Substrate transferring apparatus and thin film deposition apparatus having the same
CN104018130B (en) * 2013-12-16 2016-02-03 湘潭宏大真空技术股份有限公司 A kind of vacuum coating production line
DE102014003882B4 (en) * 2014-03-19 2017-07-13 Applied Materials, Inc. (N.D.Ges.D. Staates Delaware) Transport device for moving and / or positioning objects
KR20200043537A (en) * 2015-08-21 2020-04-27 어플라이드 머티어리얼스, 인코포레이티드 Apparatus for transportation of a substrate, apparatus for vacuum processing of a substrate, and method for maintenance of a magnetic levitation system

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