TW201929645A - Copper foil for heat dissapation and heat disspating member - Google Patents
Copper foil for heat dissapation and heat disspating member Download PDFInfo
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- TW201929645A TW201929645A TW107146225A TW107146225A TW201929645A TW 201929645 A TW201929645 A TW 201929645A TW 107146225 A TW107146225 A TW 107146225A TW 107146225 A TW107146225 A TW 107146225A TW 201929645 A TW201929645 A TW 201929645A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0207—Cooling of mounted components using internal conductor planes parallel to the surface for thermal conduction, e.g. power planes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
- C25D5/14—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/16—Electroplating with layers of varying thickness
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
- C25D5/611—Smooth layers
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/20509—Multiple-component heat spreaders; Multi-component heat-conducting support plates; Multi-component non-closed heat-conducting structures
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- Chemical Kinetics & Catalysis (AREA)
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- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Electroplating Methods And Accessories (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
本發明係關於一種散熱用銅箔及散熱部件。 The present invention relates to a copper foil for heat radiation and a heat radiation member.
近年來,伴隨著電子設備之小型化、高精密化,所使用之電子元件的發熱所造成的故障等成為問題。傳統上,已有各種為放出如此之電子設備中元件之熱之手段的研究.開發(專利文獻1等)。 In recent years, along with miniaturization and high precision of electronic equipment, problems such as failure due to heat generation of electronic components used have become problems. Traditionally, various researches have been conducted to release the heat of components in such electronic equipment. Development (Patent Literature 1 and the like).
【專利文獻1】日本特開平08-078461號公報 [Patent Document 1] Japanese Patent Laid-Open No. 08-078461
電子設備之安裝基板,通常,具有因使用而發熱之元件,惟若無法良好地將該元件之熱放出,則會有故障之虞。 The mounting substrate of an electronic device usually has an element that generates heat due to use. However, if the heat of the element cannot be released well, there is a risk of failure.
在此,本發明之實施型態,課題在於提供一種具有優異散 熱特性之散熱用銅箔及散熱部件。 Here, an object of an embodiment of the present invention is to provide a copper foil for heat dissipation and a heat dissipation member having excellent heat dissipation characteristics.
亦即,本發明之散熱用銅箔之一實施型態,其特徵係具有: 銅箔基材;及前述銅箔基材之至少任一主表面上之鍍處理層;前述鍍處理層之鍍處理面,使用雷射顯微鏡測定時,前述鍍處理面之表面積B相對於該鍍處理面之投影面積A之表面積比B/A,係1.42~3.42。 That is, one embodiment of the copper foil for heat dissipation of the present invention is characterized by having: a copper foil substrate; and a plating treatment layer on at least any one of the main surfaces of the aforementioned copper foil substrate; and plating of the aforementioned plating treatment layer When the treated surface is measured using a laser microscope, the surface area ratio B / A of the surface area B of the aforementioned plated surface to the projected area A of the plated surface is 1.42 to 3.42.
本發明之散熱用銅箔之一實施型態,其中,前述鍍處理面之表面積B相對於前述鍍處理面之投影面積A之表面積比B/A,係1.60~3.25。 In one embodiment of the copper foil for heat dissipation of the present invention, the surface area ratio B / A of the surface area B of the plating treatment surface to the projection area A of the plating treatment surface is 1.60 to 3.25.
本發明之散熱用銅箔之一實施型態,其中,前述鍍處理面之表面積B相對於前述鍍處理面之投影面積A之表面積比B/A,係1.81~3.10。 In one embodiment of the copper foil for heat dissipation of the present invention, the surface area ratio B / A of the surface area B of the plating treatment surface to the projection area A of the plating treatment surface is 1.81 to 3.10.
本發明之散熱用銅箔之一實施型態,其中,前述鍍處理面之表面粗度Ra係0.30~1.50。 In one embodiment of the copper foil for heat dissipation of the present invention, the surface roughness Ra of the aforementioned plated surface is 0.30 to 1.50.
本發明之散熱用銅箔之一實施型態,其中,前述鍍處理面之表面粗度Ra係0.40~1.30。 In one embodiment of the copper foil for heat dissipation of the present invention, the surface roughness Ra of the aforementioned plated surface is 0.40 to 1.30.
本發明之散熱用銅箔之一實施型態,其中,前述鍍處理面之表面粗度Ra係0.45~1.20。 In one embodiment of the copper foil for heat dissipation of the present invention, the surface roughness Ra of the aforementioned plated surface is 0.45 to 1.20.
本發明之散熱用銅箔之一實施型態,其中,前述鍍處理面之表面粗度Rz係2.50~9.50。 In one embodiment of the copper foil for heat dissipation of the present invention, the surface roughness Rz of the aforementioned plated surface is 2.50 to 9.50.
本發明之散熱用銅箔之一實施型態,其中,前述鍍處理面之表面粗度Rz係3.00~8.00。 One embodiment of the copper foil for heat dissipation of the present invention, wherein the surface roughness Rz of the aforementioned plated surface is 3.00 to 8.00.
本發明之散熱用銅箔之一實施型態,其中,前述鍍處理面之表面粗度Rz係3.72~7.74。 In one embodiment of the copper foil for heat dissipation of the present invention, the surface roughness Rz of the aforementioned plated surface is 3.72 to 7.74.
本發明之散熱用銅箔之一實施型態,其中,前述鍍處理層,係具有粗化粒子層。 In one embodiment of the copper foil for heat dissipation of the present invention, the plating treatment layer has a roughened particle layer.
本發明之散熱用銅箔之一實施型態,其中,前述鍍處理層,係在前述粗化粒子層上具有被覆層。 In one embodiment of the copper foil for heat dissipation of the present invention, the plating treatment layer has a coating layer on the roughened particle layer.
本發明之散熱用銅箔之一實施型態,其中,前述被覆層,係含有選自Cu、Zn、Ni、Co、Cr、W、及Fe所成群中至少1種。 In one embodiment of the copper foil for heat dissipation of the present invention, the coating layer contains at least one selected from the group consisting of Cu, Zn, Ni, Co, Cr, W, and Fe.
本發明之散熱用銅箔之一實施型態,其中,前述被覆層,係含有Co及Ni。 In one embodiment of the copper foil for heat dissipation of the present invention, the coating layer contains Co and Ni.
本發明之散熱用銅箔之一實施型態,其中,前述被覆層,係具有:被覆下層、及在該被覆下層上之被覆上層;前述被覆下層,係含有Cu、Co、及Ni;前述被覆上層,係含有Co及Ni。 An embodiment of the copper foil for heat dissipation of the present invention, wherein the coating layer includes: a coating lower layer and a coating upper layer on the coating lower layer; the coating lower layer contains Cu, Co, and Ni; and the coating The upper layer contains Co and Ni.
本發明之散熱用銅箔之一實施型態,其中,前述被覆層之厚度,係0.001μm~1.0μm。 In one embodiment of the copper foil for heat dissipation of the present invention, the thickness of the coating layer is 0.001 μm to 1.0 μm.
本發明之散熱用銅箔之一實施型態,其中,前述被覆層之厚度,係0.002μm~0.5μm。 In one embodiment of the copper foil for heat dissipation of the present invention, the thickness of the coating layer is 0.002 μm to 0.5 μm.
本發明之散熱用銅箔之一實施型態,其中,前述被覆層之厚度,係0.005μm~0.3μm。 One embodiment of the copper foil for heat dissipation of the present invention, wherein the thickness of the coating layer is 0.005 μm to 0.3 μm.
本發明之散熱用銅箔之一實施型態,其中,前述鍍處理層 上係進一步具有聚合物膜;前述聚合物膜,係包含在重複單元中至少具有1種雜原子之聚合物。 In one embodiment of the copper foil for heat dissipation of the present invention, a polymer film is further provided on the plating treatment layer, and the polymer film is a polymer containing at least one hetero atom in a repeating unit.
本發明之散熱用銅箔之一實施型態,其中,前述聚合物膜之厚度,係0.1μm~10μm。 One embodiment of the copper foil for heat dissipation of the present invention, wherein the thickness of the polymer film is 0.1 μm to 10 μm.
本發明之散熱用銅箔之一實施型態,其中,前述聚合物膜之厚度,係0.5μm~8μm。 In one embodiment of the copper foil for heat dissipation of the present invention, the thickness of the polymer film is 0.5 μm to 8 μm.
本發明之散熱用銅箔之一實施型態,其中,前述聚合物膜之厚度,係1μm~5μm。 One embodiment of the copper foil for heat dissipation of the present invention, wherein the thickness of the polymer film is 1 μm to 5 μm.
本發明之散熱用銅箔之一實施型態,其中,前述聚合物,在前述重複單元中係包含選自羰基、羧基、醚基、環氧基、羥基、及鹵素所成群中至少1種。 An embodiment of the copper foil for heat dissipation of the present invention, wherein the polymer includes at least one selected from the group consisting of a carbonyl group, a carboxyl group, an ether group, an epoxy group, a hydroxyl group, and a halogen in the repeating unit. .
本發明之散熱用銅箔之一實施型態,其中,前述聚合物,係包含選自聚酯樹脂、聚碳酸酯樹脂、聚乙烯醇樹脂、纖維素樹脂、環氧樹脂、尼龍樹脂、聚醚樹脂、及氟樹脂所成群中至少1種。 One embodiment of the copper foil for heat dissipation of the present invention, wherein the polymer is selected from the group consisting of polyester resin, polycarbonate resin, polyvinyl alcohol resin, cellulose resin, epoxy resin, nylon resin, and polyether. At least one of the group consisting of resin and fluororesin.
本發明之散熱用銅箔之一實施型態,其中,前述聚合物,係包含選自聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚對苯二甲酸丙二酯、乙酸纖維素、三乙酸纖維素、玻璃紙、雙酚A型環氧樹脂、聚己內醯胺、聚十二烷醯胺、聚環氧乙烷、聚環氧丙烷、聚偏二氟乙烯、及聚四氟乙烯所成群中至少1種。 An embodiment of the copper foil for heat dissipation of the present invention, wherein the polymer is selected from the group consisting of polyethylene terephthalate, polybutylene terephthalate, polytrimethylene terephthalate, Cellulose acetate, cellulose triacetate, cellophane, bisphenol A epoxy resin, polycaprolactam, polydodecylamine, polyethylene oxide, polypropylene oxide, polyvinylidene fluoride, and At least one of the groups of polytetrafluoroethylene.
此外,本發明之散熱部件之一實施型態,其特徵係具備上述之散熱用銅箔。 In addition, an embodiment of the heat radiation member of the present invention is characterized by including the above-mentioned copper foil for heat radiation.
藉由本發明之實施型態,可提供一種具有優異散熱特性之散熱用銅箔。 According to the embodiment of the present invention, a copper foil for heat dissipation having excellent heat dissipation characteristics can be provided.
1‧‧‧積層體 1‧‧‧ laminated body
10‧‧‧隔熱材 10‧‧‧Insulation
20‧‧‧加熱器 20‧‧‧ heater
30‧‧‧接著劑 30‧‧‧ Adhesive
40‧‧‧SUS板 40‧‧‧SUS board
50‧‧‧散熱用油脂 50‧‧‧ Thermal grease
60‧‧‧散熱用銅箔 60‧‧‧copper foil
70‧‧‧黑體膠帶 70‧‧‧Black Body Tape
100‧‧‧紅外線熱成像儀 100‧‧‧ Infrared Thermal Imager
【圖1】表示實施例1~19及比較例1~3中熱成像表示溫度之評估方法之剖面模式圖。 [Fig. 1] A schematic cross-sectional view showing a method for evaluating the thermal imaging display temperature in Examples 1 to 19 and Comparative Examples 1 to 3. [Fig.
以下,本發明並未限定為各實施型態,只要在不脫離其要旨之範圍內即可將構成要件變形具體化。此外,藉由將各實施型態所記載之複數之構成要件進行適當組合,從而可形成各種之發明。例如,可刪除實施型態所示全構成要件中之某些構成要件。進一步,亦可將不同實施型態之構成要件進行適當組合。 Hereinafter, the present invention is not limited to each embodiment, and the constituent elements can be modified and embodied as long as they do not depart from the gist thereof. In addition, various inventions can be formed by appropriately combining plural constituent elements described in each embodiment. For example, some of the constituent elements shown in the implementation form may be deleted. Further, the constituent elements of different implementation types may be appropriately combined.
近年來,智慧型手機或平板PC等之行動裝置已積極地開發,進一步高集成度且高輸出之基板搭載至小型化設備,導致散熱性之問題日漸受到矚目。在此,本發明人們,經過深入研究檢討之結果,發現藉由將銅箔所具備之鍍處理層之鍍處理面之表面積,相對於鍍處理面之投影面積之比率設定在期望之範圍內,可提升銅箔之散熱特性。 In recent years, mobile devices such as smart phones and tablet PCs have been actively developed. Further integration of high-integration and high-output substrates into miniaturized devices has caused increasing concerns about heat dissipation. Here, as a result of in-depth research and review, the inventors have found that by setting the ratio of the surface area of the plated surface of the plated surface of the copper foil to the projected area of the plated surface within a desired range, Can improve the heat dissipation characteristics of copper foil.
以下,說明本發明之一實施型態之散熱用銅箔。 Hereinafter, a copper foil for heat dissipation according to an embodiment of the present invention will be described.
本發明之一實施型態之散熱用銅箔,係具有:銅箔基材、 及銅箔基材之至少任一主表面上之鍍處理層。並且,鍍處理層之鍍處理面,使用雷射顯微鏡測定時,鍍處理面之表面積B相對於鍍處理面之投影面積A之表面積比B/A,係1.42~3.42。根據本實施型態,藉由在此表面積比B/A之範圍內,可具有優異之散熱特性。 A copper foil for heat dissipation according to an embodiment of the present invention includes a copper foil base material and a plating treatment layer on at least one main surface of the copper foil base material. In addition, when the plating treatment surface of the plating treatment layer is measured using a laser microscope, the surface area ratio B / A of the surface area B of the plating treatment surface to the projection area A of the plating treatment surface is 1.42 to 3.42. According to this embodiment mode, by having the surface area ratio B / A within this range, it can have excellent heat dissipation characteristics.
(銅箔基材) (Copper foil substrate)
本實施型態可使用之銅箔基材之型態並無特別限制。此外,典型之本實施型態所使用之銅箔基材,係電解銅箔或壓延銅箔任一者皆可。一般而言,電解銅箔係在鈦或不銹鋼之滾筒上藉由硫酸銅鍍浴將銅電解析出而製造;壓延銅箔係藉由重複以壓延輥進行塑性加工及熱處理而製造。壓延銅箔適用於要求可撓性之用途之情形較多。又,本說明書中之用語「銅箔基材」在單獨使用時係亦包含銅合金箔基材者。銅箔基材之厚度,係製造時例如不會產生皺摺等之1μm以上為佳。惟,考慮到智慧型手機或平板PC等薄型.小型化之規格,係20μm以下為佳。 The type of the copper foil substrate that can be used in this embodiment is not particularly limited. In addition, a typical copper foil substrate used in this embodiment may be either electrolytic copper foil or rolled copper foil. Generally speaking, electrolytic copper foil is produced by electrolyzing copper on a drum of titanium or stainless steel by a copper sulfate plating bath; rolled copper foil is produced by repeatedly performing plastic processing and heat treatment with a calender roll. The rolled copper foil is often used in applications requiring flexibility. In addition, the term "copper foil base material" in this specification includes a copper alloy foil base material when used alone. The thickness of the copper foil substrate is preferably 1 μm or more in the production, for example, without wrinkles. However, considering thin phones such as smart phones or tablet PCs. The miniaturized specifications are preferably 20 μm or less.
(鍍處理層) (Plating treatment layer)
本實施型態,鍍處理層之鍍處理面,使用雷射顯微鏡測定時,鍍處理面之表面積B相對於鍍處理面之投影面積A之表面積比B/A係1.42~3.42。此外,本實施型態,為了進一步提升鍍處理層之熱輻射性,表面積比B/A,係1.60以上為佳,1.81以上較佳,2.18以上進一步較佳,2.35以上進一步更佳。惟,即使表面積比B/A越高,鍍處理層之熱輻射性越優異,但有粗化粒子容易因外力而脫落之情形,故表面積比B/A,係3.25以下為佳,3.10以下較佳,2.98以下進一步較佳,2.88以下進一步更佳。 In this embodiment, when the plating treatment surface of the plating treatment layer is measured using a laser microscope, the surface area ratio B / A of the surface area B of the plating treatment surface to the projection area A of the plating treatment surface is 1.42 to 3.42. In addition, in this embodiment, in order to further improve the heat radiation of the plating treatment layer, the surface area ratio B / A is preferably 1.60 or more, more preferably 1.81 or more, more preferably 2.18 or more, and more preferably 2.35 or more. However, even if the surface area ratio B / A is higher, the heat radiation of the plating treatment layer is more excellent, but the roughened particles may easily fall off due to external forces. Therefore, the surface area ratio B / A is preferably 3.25 or less, and 3.10 or less Good, further preferably below 2.98, further preferably below 2.88.
此外,本實施型態中,鍍處理面之表面粗度Ra,為了將發 熱體所生之熱良好地進行散熱,係0.30以上為佳,0.40以上較佳,0.45以上進一步更佳。惟,為了使粗化粒子不易因外力導致脫落,係1.50以下為佳,1.30以下較佳,1.20以下進一步更佳。又,表面粗度Ra,係表示JIS B 0601:2013所記載之算術平均粗度。 In addition, in this embodiment, the surface roughness Ra of the plated surface is preferably 0.30 or more, more preferably 0.40 or more, and even more preferably 0.45 or more in order to dissipate the heat generated by the heat generating body. However, in order to prevent the roughened particles from falling off easily due to external force, it is preferably 1.50 or less, more preferably 1.30 or less, and even more preferably 1.20 or less. The surface roughness Ra is an arithmetic average roughness described in JIS B 0601: 2013.
此外,本實施型態中,鍍處理面之表面粗度Rz,為了良好地將發熱體所生之熱進行散熱,係2.50以上為佳,3.00以上較佳,3.72以上進一步更佳。惟,為了使粗化粒子不易因外力導致脫落,係9.50以下為佳,8.00以下較佳,7.74以下進一步更佳。又,表面粗度Rz,係表示JIS B 0601:2013所記載之最大高度粗度。 In addition, in the present embodiment, the surface roughness Rz of the plated surface is preferably 2.50 or more, preferably 3.00 or more, and even more preferably 3.72 or more in order to dissipate the heat generated by the heating element. However, in order to prevent the roughened particles from falling off easily due to external forces, it is preferably below 9.50, more preferably below 8.00, and even more preferably below 7.74. The surface roughness Rz represents the maximum height roughness described in JIS B 0601: 2013.
本實施型態中,鍍處理層,為了提升熱輻射性,係具有粗化粒子層為佳,具有粗化粒子層及該粗化粒子層上之被覆層較佳。 In this embodiment, in order to improve the heat radiation property, the plated layer is preferably provided with a roughened particle layer, and preferably has a roughened particle layer and a coating layer on the roughened particle layer.
粗化粒子層中,粗化處理,例如,可藉由以銅或銅合金形成粗化粒子而進行。粗化處理亦可係微細者。 In the roughened particle layer, the roughening treatment can be performed, for example, by forming roughened particles with copper or a copper alloy. The roughening treatment can also be fine.
具有粗化粒子層及該粗化粒子層上之被覆層之情形中,此被覆層,係被覆在粗化粒子之表面。藉此,粗化粒子之前端部分因被覆層而增厚,粗化粒子之基礎因被覆層而增粗,從而增加鍍處理面之表面積。由於鍍處理面之表面積增加,故可進一步提升熱輻射性。 In the case of having a roughened particle layer and a coating layer on the roughened particle layer, the coating layer is coated on the surface of the roughened particles. Thereby, the front end portion of the roughened particles is thickened by the coating layer, and the basis of the roughened particles is thickened by the coating layer, thereby increasing the surface area of the plated surface. Since the surface area of the plated surface is increased, the heat radiation property can be further improved.
此外,有粗化粒子之前端部分折損、或粗化粒子從基礎剝落等,一般稱為塵化現象之問題產生之情形。此塵化現象,儘管經粗化鍍處理之粗化粒子層具有優異熱輻射性,但粗化粒子容易因外力而脫落,製作或使用銅箔時會因「摩擦」而發生剝離。在此,本實施型態,為了抑制塵化,係以被覆層將此粗化粒子之表面被覆。藉此,粗化粒子之前端部分 因被覆層而增厚,粗化粒子之基礎因被覆層而增粗。如此地,藉由在粗化粒子層上形成被覆層,可使粗化粒子不易因外力導致脫落,從而可抑制塵化。 In addition, the front end portion of the roughened particles is broken, or the roughened particles are peeled off from the foundation, and the problem is generally called a dusting phenomenon. This dusting phenomenon, although the roughened particle layer subjected to the roughening plating process has excellent heat radiation properties, the roughened particles are liable to fall off due to external forces, and peeling occurs due to "friction" when making or using copper foil. Here, in this embodiment, in order to suppress dusting, the surface of the roughened particles is covered with a coating layer. Thereby, the front end portion of the roughened particles is thickened by the coating layer, and the basis of the roughened particles is thickened by the coating layer. In this way, by forming the coating layer on the roughened particle layer, the roughened particles can be prevented from falling off easily due to external force, and dusting can be suppressed.
粗化粒子層,在以銅或銅合金形成粗化粒子後,根據熱輻射性、塵化、及密著性等之觀點,可進一步進行設置含有選自Cu、Zn、Ni、Co、Cr、W、及Fe所成群中至少1種之被覆層之光滑鍍處理。例如,在粗化粒子層上,具有被覆下層及該被覆下層上之被覆上層,被覆下層,係含有Cu、Co、及Ni,被覆上層,係含有Co及Ni為佳。又,此等金屬,係含在被覆層之全部或一部分(例如,上部)為佳。 The roughened particle layer may be further formed from copper, Zn, Ni, Co, Cr, and the like from the viewpoints of heat radiation, dusting, and adhesion after forming roughened particles with copper or a copper alloy. A smooth plating treatment of a coating layer of at least one of W and Fe groups. For example, the roughened particle layer preferably has a coating lower layer and a coating upper layer on the coating lower layer. The coating lower layer preferably contains Cu, Co, and Ni, and the coating upper layer preferably contains Co and Ni. These metals are preferably contained in all or a part (for example, the upper part) of the coating layer.
被覆層之厚度,為了提升散熱特性,係0.001μm以上為佳,0.002μm以上較佳,0.005μm以上進一步較佳,0.01μm以上進一步更佳。惟,考慮到智慧型手機或平板PC等薄型.小型化之規格,係1.0μm以下為佳,0.5μm以下較佳,0.3μm以下進一步較佳,0.1μm以下進一步更佳。又,被覆層之厚度,係指被覆層之平均厚度。 In order to improve the heat dissipation characteristics, the thickness of the coating layer is preferably 0.001 μm or more, more preferably 0.002 μm or more, more preferably 0.005 μm or more, and still more preferably 0.01 μm or more. However, considering thin phones such as smart phones or tablet PCs. The miniaturization specification is preferably 1.0 μm or less, more preferably 0.5 μm or less, even more preferably 0.3 μm or less, and still more preferably 0.1 μm or less. The thickness of the coating layer refers to the average thickness of the coating layer.
被覆層之厚度之計測方法,以下說明重量計測之方法之一例。 A method for measuring the thickness of the coating layer is described below as an example of a method for measuring weight.
首先,準備形成有粗化粒子層及被覆層之散熱用銅箔。從前述散熱用銅箔採取2cm×2cm之試料,以20體積%硝酸水溶液溶解前述試料得到溶液。接著,使用原子吸收分光光度計以原子吸收光譜法對於此溶液進行定量分析,從而測定前述試料中之被覆層所含各金屬之濃度,使用此各金屬濃度對前述試料中之被覆層中各金屬之重量進行定量。藉由所得之各金屬之重量、及金屬之密度算出被覆層之體積。並且,將所得之被覆層之體 積,除以試料之面積(4cm2)與測定之表面積比之乘值,從而算出被覆層之厚度(平均厚度)。 First, a copper foil for heat dissipation in which a roughened particle layer and a coating layer are formed is prepared. A 2 cm × 2 cm sample was taken from the copper foil for heat dissipation, and the sample was dissolved in a 20% by volume aqueous nitric acid solution to obtain a solution. Next, this solution is quantitatively analyzed by atomic absorption spectrometry using an atomic absorption spectrophotometer to determine the concentration of each metal contained in the coating layer in the aforementioned sample, and the concentration of each metal in the coating layer in the aforementioned sample is measured using this concentration of each metal The weight is quantified. The volume of the coating layer was calculated from the weight of each metal obtained and the density of the metal. The thickness of the coating layer (average thickness) was calculated by dividing the volume of the obtained coating layer by the product of the area of the sample (4 cm 2 ) and the measured surface area ratio.
(聚合物膜) (Polymer film)
本實施型態,為了提升熱輻射性,係在鍍處理層上進一步具有聚合物膜,聚合物膜,係包含在重複單元中具有至少1種之雜原子之聚合物為佳。理由係,熱輻射特性與塗膜中之樹脂之化學構造有密切關係,可推論顯示寬譜強紅外線吸收峰越多之聚合物,其發射率越高。 In this embodiment, in order to improve the heat radiation property, it is preferable to further include a polymer film on the plating treatment layer. The polymer film is preferably a polymer containing at least one type of hetero atom in the repeating unit. The reason is that the heat radiation characteristic is closely related to the chemical structure of the resin in the coating film. It can be inferred that the polymer with more broad-spectrum strong infrared absorption peaks has a higher emissivity.
本實施型態,被覆層上進一步具有聚合物膜之情形中,係藉由被覆層與聚合物膜之協同效應,進一步提升散熱特性,並亦提升塵化之特性。此外,粗化粒子層上進一步具有聚合物膜之情形中,藉由在粗化粒子層之粗化粒子上被覆聚合物膜,從而提升塵化之特性。 In this embodiment, in the case where the coating layer further has a polymer film, the synergistic effect between the coating layer and the polymer film further improves the heat dissipation characteristics and also the dusting characteristics. In addition, in the case where a polymer film is further provided on the roughened particle layer, the roughened particles of the roughened particle layer are coated with the polymer film to improve the dusting characteristics.
聚合物,顯示多數寬譜強紅外線吸收峰者,係在重複單元中包含選自羰基、羧基、醚基、環氧基、羥基、及鹵素所成群中至少1種為佳。此聚合物,只要係具有顯示多數寬譜強紅外線吸收峰之化學構造之聚合物即可,並無特別限定,可列舉例如:聚酯樹脂、聚碳酸酯樹脂、聚乙烯醇樹脂(PVA)、纖維素樹脂、環氧樹脂、尼龍樹脂、聚醚樹脂、及氟樹脂。 The polymer, which shows most broad-spectrum strong infrared absorption peaks, preferably contains at least one selected from the group consisting of a carbonyl group, a carboxyl group, an ether group, an epoxy group, a hydroxyl group, and a halogen in the repeating unit. This polymer is not particularly limited as long as it is a polymer having a chemical structure showing a large broad spectrum of strong infrared absorption peaks, and examples thereof include polyester resins, polycarbonate resins, polyvinyl alcohol resins (PVA), and fibers. Plain resin, epoxy resin, nylon resin, polyether resin, and fluorine resin.
聚酯樹脂並無特別限定,可列舉例如:聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚對苯二甲酸丙二酯等。 The polyester resin is not particularly limited, and examples thereof include polyethylene terephthalate, polybutylene terephthalate, and polytrimethylene terephthalate.
聚碳酸酯樹脂並無特別限定,可列舉例如:由2,2-雙(4-羥苯)丙烷(雙酚A)所製造者。 The polycarbonate resin is not particularly limited, and examples thereof include those produced from 2,2-bis (4-hydroxybenzene) propane (bisphenol A).
聚乙烯醇樹脂,係指聚醋酸乙烯酯之皂化物。 Polyvinyl alcohol resin refers to the saponification of polyvinyl acetate.
纖維素樹脂並無特別限定,可列舉例如:乙酸纖維素、三乙酸纖維素、玻璃紙等。 The cellulose resin is not particularly limited, and examples thereof include cellulose acetate, cellulose triacetate, and cellophane.
環氧樹脂並無特別限定,可列舉例如:雙酚A型環氧樹脂等。 The epoxy resin is not particularly limited, and examples thereof include a bisphenol A type epoxy resin and the like.
尼龍樹脂並無特別限定,可列舉例如:聚己內醯胺(尼龍6)、聚十二烷醯胺(尼龍12)等。 The nylon resin is not particularly limited, and examples thereof include polycaprolactam (nylon 6), polydodecylamine (nylon 12), and the like.
聚醚樹脂並無特別限定,可列舉例如:聚環氧乙烷、聚環氧丙烷等。 The polyether resin is not particularly limited, and examples thereof include polyethylene oxide and polypropylene oxide.
氟樹脂並無特別限定,可列舉例如:聚偏二氟乙烯、聚四氟乙烯等。 The fluororesin is not particularly limited, and examples thereof include polyvinylidene fluoride and polytetrafluoroethylene.
聚合物膜之厚度,為了提升散熱特性,係0.1μm以上為佳,0.5μm以上較佳,1μm以上進一步較佳,2μm以上進一步更佳。惟,考慮到智慧型手機或平板PC等薄型.小型化之規格,係10μm以下為佳,8μm以下較佳,5μm以下進一步較佳,3μm以下進一步更佳。又,聚合物膜之厚度,係指聚合物膜之平均厚度。 In order to improve the heat dissipation characteristics, the thickness of the polymer film is preferably 0.1 μm or more, more preferably 0.5 μm or more, more preferably 1 μm or more, and even more preferably 2 μm or more. However, considering thin phones such as smart phones or tablet PCs. The miniaturization specifications are preferably 10 μm or less, 8 μm or less is preferable, 5 μm or less is more preferable, and 3 μm or less is more preferable. The thickness of the polymer film refers to the average thickness of the polymer film.
聚合物膜之厚度之計測方法,以下說明測定器之方法之一例。 A method of measuring the thickness of the polymer film is described below as an example of a method of a measuring device.
首先,藉由儀表測厚儀對銅箔基材之主表面上形成粗化粒子層、或形成粗化粒子層及被覆層之銅箔之厚度進行3點以上測定,算出其3點以上之平均值。接著,準備銅箔基材之主表面上具有粗化粒子層及聚合物膜、或具有粗化粒子層、被覆層、及聚合物膜之散熱用銅箔。並且,藉由儀表測厚儀對散熱用銅箔之厚度進行3點以上測定,算出其3點以上之平均值。由散熱用銅箔之厚度之平均值,扣除前述銅箔之厚度之平均值,從而算出聚合物膜之厚度(平均厚度)。 First, the thickness of the copper foil that forms the roughened particle layer, or the roughened particle layer and the coating layer on the main surface of the copper foil substrate is measured by an instrument thickness gauge, and the average of the three or more points is calculated. value. Next, a copper foil for heat dissipation having a roughened particle layer and a polymer film on the main surface of the copper foil base material, or a roughened particle layer, a coating layer, and a polymer film was prepared. In addition, the thickness of the copper foil for heat dissipation was measured by three or more points with a meter thickness gauge, and the average value of the three or more points was calculated. The thickness (average thickness) of the polymer film is calculated from the average value of the thickness of the copper foil for heat dissipation and subtracting the average value of the thickness of the aforementioned copper foil.
此外,本實施型態,為了提升鍍處理層與聚合物膜之密著 性,在鍍處理層上,亦可形成防鏽層,進一步亦可在其表面施予鉻酸鹽處理、矽烷偶聯處理等處理。防鏽層、矽烷偶聯處理可使用習知者。 In addition, in this embodiment, in order to improve the adhesion between the plating treatment layer and the polymer film, a rust prevention layer may be formed on the plating treatment layer, and the surface may be further subjected to chromate treatment and silane coupling. Processing and other processing. The rust preventive layer and the silane coupling treatment can be used by a conventional person.
接著,以下表示形成上述之鍍處理層時之粗化粒子層、被覆層、防鏽層、聚合物膜之各形成條件(鍍浴組成及鍍條件、薄膜條件)之一例。 Next, an example of the formation conditions (plating bath composition, plating conditions, and film conditions) of each of the roughened particle layer, the coating layer, the rust-proof layer, and the polymer film when forming the above-mentioned plating treatment layer is shown below.
(A)粗化粒子層 (A) Coarse particle layer
粗化粒子層係在銅箔基材之任一側之主表面上藉由(A-1)粗化粒子層之形成1之條件形成粗化粒子。除了前述(A-1)粗化粒子層之形成1以外,較佳係形成藉由(A-2)粗化粒子層之形成2之條件使粗化粒子進一步成長之粗化粒子層。 The roughened particle layer is formed on the main surface on either side of the copper foil base material under the conditions of (A-1) roughened particle layer formation 1 to form roughened particles. In addition to the formation 1 of the roughened particle layer (A-1) described above, it is preferable to form a roughened particle layer in which roughened particles are further grown under the conditions of formation 2 of the roughened particle layer (A-2).
(A-1)粗化粒子層之形成1(鍍Cu) (A-1) Formation of roughened particle layer 1 (Cu plating)
粗化粒子層之形成1之處理,係相當於粗化鍍(粗鍍)之處理。粗化鍍係將電流密度設定在極限電流密度以上所進行之鍍。 The process of forming the roughened particle layer 1 is a process equivalent to roughening plating (rough plating). The roughening plating is performed by setting the current density to a limit current density or higher.
液體組成:銅10~20g/L;硫酸50~100g/L Liquid composition: copper 10 ~ 20g / L; sulfuric acid 50 ~ 100g / L
液溫:25~50℃ Liquid temperature: 25 ~ 50 ℃
電流密度:20~58A/dm2 Current density: 20 ~ 58A / dm 2
時間:0.5~5秒 Time: 0.5 ~ 5 seconds
(A-2)粗化粒子層之形成2(鍍Cu) (A-2) Formation of roughened particle layer 2 (Cu plating)
粗化粒子層之形成2之處理,係相當於粗化鍍(粗鍍)之處理。粗化鍍係將電流密度設定在未達極限電流密度所進行之鍍。 The process of forming the roughened particle layer 2 is a process equivalent to roughening plating (rough plating). The roughening plating is performed by setting the current density to a limit current density.
液體組成:銅15~50g/L;硫酸60~100g/L Liquid composition: copper 15 ~ 50g / L; sulfuric acid 60 ~ 100g / L
液溫:25~50℃ Liquid temperature: 25 ~ 50 ℃
電流密度:20~58A/dm2 Current density: 20 ~ 58A / dm 2
時間:1~10秒 Time: 1 ~ 10 seconds
又,電流密度越低,及/或,庫侖量越多時有前述之表面粗度Ra之減低效果越大之情形。 Further, the lower the current density and / or the larger the Coulomb amount, the larger the aforementioned effect of reducing the surface roughness Ra may be.
此外,粗化粒子層亦可由進行1次或2次以上之處理而形成。 In addition, the roughened particle layer may be formed by performing one or more treatments.
(B)被覆層之形成 (B) Formation of coating layer
被覆層係在粗化粒子層上藉由(B-1)被覆下層之形成之條件形成被覆下層後,藉由(B-2)被覆上層之形成之條件形成被覆上層為佳。被覆下層及被覆上層之形成之處理,任一者皆係相當於光滑鍍之處理。光滑鍍係將電流密度設定在未達極限電流密度所進行之鍍。被覆下層可藉由以下之條件形成。又,亦可不形成被覆下層。 The coating layer is formed on the roughened particle layer under the conditions of (B-1) coating the lower layer, and then the coating upper layer is preferably formed under the conditions of (B-2) coating the upper layer. Either the formation of the coating lower layer or the coating upper layer is equivalent to a smooth plating treatment. The smooth plating is a plating performed by setting the current density to a limit current density. The coating lower layer can be formed under the following conditions. In addition, the coating underlayer may not be formed.
(B-1)被覆下層之形成條件 (B-1) Conditions for forming the lower layer
列舉被覆下層之形成條件之一例時,如下述。 An example of the conditions for forming the coating lower layer is as follows.
液體組成:Cu10~20g/L;所含選自Zn、Ni、Co、Cr、W、及Fe所成群中至少1種之元素個別為0.001~15g/L Liquid composition: Cu10 ~ 20g / L; at least one element selected from the group consisting of Zn, Ni, Co, Cr, W, and Fe is 0.001 ~ 15g / L
pH:2~3 pH: 2 ~ 3
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
電流密度:10~50A/dm2 Current density: 10 ~ 50A / dm 2
時間:0.1~2秒 Time: 0.1 ~ 2 seconds
(B-2)被覆上層之形成條件 (B-2) Conditions for forming the upper layer
列舉被覆上層之形成條件之一例時,如下述。 An example of the conditions for forming the coating upper layer is as follows.
液體組成:Cu10~20g/L;所含選自Zn、Ni、Co、Cr、W、及Fe所成群 中至少1種之元素個別為0.001~15g/L Liquid composition: Cu10 ~ 20g / L; at least one element selected from the group consisting of Zn, Ni, Co, Cr, W, and Fe is 0.001 ~ 15g / L
pH:2~3 pH: 2 ~ 3
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
電流密度:0.5~20A/dm2 Current density: 0.5 ~ 20A / dm 2
時間:0.1~300秒 Time: 0.1 ~ 300 seconds
又,被覆下層及被覆上層亦可藉由1次或2次以上之處理而形成。 The coated lower layer and the coated upper layer may be formed by one or two or more treatments.
(C)防鏽層 (C) Anti-rust layer
此外,前述被覆層上,或粗化粒子層上,亦可形成防鏽層,特別係鉻酸鹽層之防鏽層。本實施型態中較佳之防鏽處理,係鉻氧化物單獨之皮膜處理或鉻氧化物與鋅/鋅氧化物之混合物皮膜處理。鉻氧化物與鋅/鋅氧化物之混合物皮膜處理,係使用含有鋅鹽或氧化鋅與鉻酸鹽之鍍浴進行電鍍而被覆鋅或氧化鋅與鉻氧化物所成鋅-鉻基混合物之防鏽層之處理。 In addition, a rust preventive layer may be formed on the coating layer or on the roughened particle layer, especially a rust preventive layer of a chromate layer. The preferred rust prevention treatment in this embodiment is a coating treatment of chromium oxide alone or a coating treatment of a mixture of chromium oxide and zinc / zinc oxide. The coating of chromium oxide and zinc / zinc oxide mixture is treated by using a plating bath containing zinc salt or zinc oxide and chromate to coat the zinc-chromium-based mixture made of zinc or zinc oxide and chromium oxide. Treatment of rust layer.
鍍浴,具代表性的,係使用K2Cr2O7、Na2Cr2O7等之重鉻酸鹽或CrO3等之至少一種;及水溶性鋅鹽,例如ZnO、ZnSO4.7H2O等至少一種;及鹼金屬氫氧化物之混合水溶液。代表性之鍍浴組成及電解條件,係例如以下所述。下述中,雖係表示電解鉻酸鹽處理之條件,惟亦可係浸漬鉻酸鹽處理。 The plating bath, typically, uses at least one of dichromates of K 2 Cr 2 O 7 , Na 2 Cr 2 O 7 or CrO 3 and the like; and water-soluble zinc salts, such as ZnO, ZnSO 4 . 7H 2 O and the like; and a mixed aqueous solution of an alkali metal hydroxide. Typical plating bath compositions and electrolytic conditions are as follows. In the following description, the conditions for electrolytic chromate treatment are shown, but they may be immersion chromate treatment.
形成防鏽層之鍍條件 Plating conditions to form a rust preventive layer
液體組成:重鉻酸鉀1~10g/L;鋅0~5g/L Liquid composition: potassium dichromate 1 ~ 10g / L; zinc 0 ~ 5g / L
pH:3~4 pH: 3 ~ 4
液溫:50~60℃ Liquid temperature: 50 ~ 60 ℃
電流密度:0~2A/dm2(為了電解鉻酸鹽處理) Current density: 0 ~ 2A / dm 2 (for electrolytic chromate treatment)
時間:1~10秒 Time: 1 ~ 10 seconds
(D)聚合物膜之形成 (D) Formation of polymer film
進一步,在鍍處理層上形成聚合物膜,抑或在防鏽層上形成聚合物膜為佳。 Further, it is preferable to form a polymer film on the plating treatment layer, or to form a polymer film on the anti-rust layer.
塗佈方法,係以含有聚合物之塗佈液之噴霧進行噴灑;塗佈機之塗佈、浸漬、流動床等任一者皆可。聚合物膜之厚度,係藉由調整固形分濃度或塗佈量而成為0.1~10μm。之後,因應必要,亦可為達到改善銅箔之延展性之目的而施予退火處理。 The coating method is spraying with a spray of a coating solution containing a polymer; any one of coating, dipping, and fluid bed of a coating machine is acceptable. The thickness of the polymer film is 0.1 to 10 μm by adjusting the solid content concentration or the coating amount. After that, if necessary, an annealing treatment may be performed for the purpose of improving the ductility of the copper foil.
具備本實施型態之散熱用銅箔之散熱部件,例如,可用於使智慧型手機或平板PC等之行動裝置所內建之發熱部件進行散熱者。 The heat dissipating member provided with the copper foil for heat dissipating in this embodiment mode can be used, for example, to dissipate heat generating components built in mobile devices such as smart phones or tablet PCs.
以下,基於實施例及比較例進行說明。又,本實施例僅係代表其中一例,並非係限制在此例者。亦即,係包含本發明所含其他態樣或變形者。 Hereinafter, it demonstrates based on an Example and a comparative example. In addition, this embodiment represents only one example, and is not limited to this example. That is, it includes other aspects or modifications included in the present invention.
<實施例1> <Example 1>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,在下述所示條件範圍內,形成粗化粒子層(Cu)。所使用之鍍浴組成及鍍條件,如以下所述。 A roughened particle layer (Cu) was formed on the main surface on either side of a rolled copper foil (JX Metal Co., Ltd., TPC foil) having a thickness of 12 μm under the conditions shown below. The composition and conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(A)粗化粒子層1之形成(鍍Cu) (A) Formation of roughened particle layer 1 (Cu plating)
液體組成:銅11g/L;硫酸50g/L Liquid composition: copper 11g / L; sulfuric acid 50g / L
電流密度:24.3A/dm2 Current density: 24.3A / dm 2
液溫:常溫 Liquid temperature: normal temperature
時間:1秒 Time: 1 second
次數:2次 Number of times: 2 times
(B)粗化粒子層2之形成(鍍Cu) (B) Formation of roughened particle layer 2 (Cu plating)
液體組成:銅20g/L;硫酸100g/L Liquid composition: copper 20g / L; sulfuric acid 100g / L
電流密度:28.6A/dm2 Current density: 28.6A / dm 2
液溫:50℃ Liquid temperature: 50 ℃
時間:1秒 Time: 1 second
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、熱成像表示溫度、塵化。其結果,如表1所示。又,對於表面粗度Ra及Rz、表面積比、熱成像表示溫度、塵化之評估方法進行個別說明。 With respect to the plated surface of the obtained copper foil for heat dissipation, the surface roughness Ra and Rz, the surface area ratio, and the thermal imaging indication temperature and dusting were evaluated. The results are shown in Table 1. In addition, the evaluation methods of the surface roughness Ra and Rz, the surface area ratio, the thermal imaging display temperature, and dusting will be individually described.
(表面粗度Ra、Rz) (Surface roughness Ra, Rz)
使用非接觸式粗度測定機(雷射顯微鏡,奧林巴斯製LEXT OLS 4000)測定各實施例及比較例之樣品之粗化粒子層側表面之表面粗度Ra(算術平均粗度)及表面粗度Rz(最大高度粗度)。同測定機之雷射波長係405nm,內建透鏡之倍率係20倍。在任意5處測定Ra及Rz,將該Ra及Rz之5處之平均值作為Ra及Rz之值。此外,對各實施例及比較例中所使用之粗化處理前之銅箔基材之預定施予粗化處理之側之表面,亦與前述相同測定Ra與Rz。又,Ra與Rz之測定係在TD方向(寬方向,亦即與銅箔基材之壓延方向垂直 之方向)進行。測定條件及解析條件中主要項目之設定如以下所述。 The surface roughness Ra (arithmetic average roughness) of the surface of the roughened particle layer of each of the examples and comparative examples was measured using a non-contact type roughness measuring machine (laser microscope, LEXT OLS 4000 manufactured by Olympus) and Surface roughness Rz (maximum height roughness). The laser wavelength of the same measuring machine is 405nm, and the built-in lens has a magnification of 20 times. Ra and Rz were measured at arbitrary five places, and the average value of the five places of Ra and Rz was taken as the value of Ra and Rz. In addition, Ra and Rz were also measured on the surface of the copper foil base material before the roughening treatment used in each of the examples and comparative examples on the side to be roughened. The measurement of Ra and Rz was performed in the TD direction (wide direction, that is, a direction perpendicular to the rolling direction of the copper foil substrate). The setting of the main items in the measurement conditions and analysis conditions is as follows.
<測定條件> <Measurement conditions>
對物透鏡:MPLAPONLEXT 100(倍率:100倍;開口數:0.95) Object lens: MPLAPONLEXT 100 (magnification: 100 times; number of openings: 0.95)
掃描模式:XYZ高精度(高解析度:10nm,捕獲數據之像素數:1024×1024) Scanning mode: XYZ high precision (high resolution: 10nm, number of pixels of captured data: 1024 × 1024)
測定範圍:橫130μm×縱130μm Measuring range: 130 μm horizontal × 130 μm vertical
測定環境溫度:23~25℃ Measuring ambient temperature: 23 ~ 25 ℃
<解析條件> <Analysis conditions>
解析區域設定:無(測定範圍為全視野進行解析) Analysis area setting: None (measurement range is full-field analysis)
分界:無(λc、λs、λf皆無) Demarcation: None (none of λc, λs, λf)
雜音消除以及傾斜校正:無 Noise reduction and tilt correction: None
(表面積比) (Surface area ratio)
使用非接觸式粗度測定機(雷射顯微鏡,奧林巴斯製LEXT OLS 4000),測定鍍處理面之表面積。使用鍍處理面之表面積B相對於鍍處理面之投影面積A,作為表面積比B/A。又,對鍍處理層上具有聚合物膜者,於塗佈前述聚合物膜前測定鍍處理層之表面積。測定條件及解析條件中主要項目之設定如以下所述。 The surface area of the plated surface was measured using a non-contact roughness measuring machine (laser microscope, LEXT OLS 4000 manufactured by Olympus). As the surface area ratio B / A, the surface area B of the plated surface with respect to the projected area A of the plated surface was used. In addition, for those having a polymer film on the plated layer, the surface area of the plated layer was measured before coating the polymer film. The setting of the main items in the measurement conditions and analysis conditions is as follows.
<測定條件> <Measurement conditions>
與上述測定表面粗度Ra及Rz之條件相同。 The conditions are the same as those for measuring the surface roughness Ra and Rz.
又,由於測定範圍係橫130μm×縱130μm,故鍍處理面之投影面積A為:16923μm2。 In addition, since the measurement range is 130 μm in width × 130 μm in length, the projected area A of the plated surface is 16923 μm 2 .
測定環境溫度:23~25℃ Measuring ambient temperature: 23 ~ 25 ℃
<解析條件> <Analysis conditions>
與上述解析表面粗度Ra及Rz之條件相同。 The conditions are the same as those for analyzing the surface roughnesses Ra and Rz.
惟,關於閾值設定,直方圖;閾值1:0%;閾值2:100%。 However, regarding the threshold setting, histogram; threshold 1: 0%; threshold 2: 100%.
(熱成像表示溫度) (Thermal imaging indicates temperature)
使用紅外線熱成像儀(奇諾(Chino)股份有限公司CPA-0150J),根據以下之測定條件進行測定。如圖1所示,製成由下方依序為:隔熱材10、加熱器20、接著劑(東亞合成股份有限公司,ARON ALPHA(註冊商標))30、SUS板40、散熱用油脂50、散熱用銅箔60所成之積層體1,將此積層體1配置在隔熱部件所成之包殼(圖式未表示)。進一步,在該積層體之散熱用銅箔60上,配置發射率0.9之黑體膠帶70使其覆蓋散熱用銅箔60之大略一半之面積。施加直流電流(電流:0.3A;電壓4.0V)將加熱器20加熱,加熱至紅外線熱成像儀100上積層體1之黑體膠帶70所覆蓋之區域之表示溫度顯示為88.0℃之溫度。使用紅外線熱成像儀100,以黑體膠帶70所覆蓋之區域為基準(88.0℃),測定積層體1之散熱用銅箔60之部分之表示溫度。一般而言,紅外線熱成像儀100會檢測出從試料表面放出之紅外線能量,將其作為表示溫度。測定具有低發射率之最外表面之試料時,由於從前述試料放出之紅外線能量極小,實際之試料溫度與熱成像之表示溫度會產生偏差。在此,如上述係將已知發射率之黑體膠帶之熱成像之表示溫度作為基準,比較實施例1所得散熱用銅箔之熱成像之表示溫度,從而評估散熱用銅箔之熱輻射性。又,表1中,熱成像表示溫度越接近基準之88.0℃,表示發射率越高。亦即,表示放出紅外線之能力優異,散熱特性良好。 The measurement was performed using an infrared thermal imager (Chino Co., Ltd. CPA-0150J) under the following measurement conditions. As shown in FIG. 1, it is made in the following order: heat insulation material 10, heater 20, adhesive (East Asia Synthesis Co., Ltd., ARON ALPHA (registered trademark)) 30, SUS board 40, heat dissipation grease 50, The laminated body 1 made of the copper foil 60 for heat radiation is arrange | positioned in the envelope (not shown) formed by the heat insulation member. Further, a black body tape 70 having an emissivity of 0.9 is disposed on the copper foil 60 for heat dissipation of the laminated body so as to cover approximately half the area of the copper foil 60 for heat dissipation. A direct current (current: 0.3 A; voltage 4.0 V) was applied to heat the heater 20 to the area covered by the black body tape 70 of the laminated body 1 on the infrared thermal imager 100 and the indicated temperature was 88.0 ° C. Using the infrared thermal imager 100, using the area covered by the black body tape 70 as a reference (88.0 ° C), the indicated temperature of the portion of the copper foil 60 for heat dissipation of the laminated body 1 was measured. Generally, the infrared thermal imager 100 detects the infrared energy emitted from the surface of the sample and uses it as the indicated temperature. When measuring the outermost surface of a sample with a low emissivity, the infrared energy emitted from the aforementioned sample is extremely small, and the actual sample temperature will differ from the indicated temperature of the thermal imaging. Here, as described above, the indicated temperature of the thermal imaging of the black body tape with known emissivity is used as a reference, and the indicated temperature of the thermal imaging of the copper foil for heat radiation obtained in Example 1 is compared to evaluate the thermal radiation of the copper foil for heat radiation. In Table 1, the thermal imaging indicates that the closer the temperature is to 88.0 ° C, the higher the emissivity. That is, it shows that the capability of emitting infrared rays is excellent, and the heat radiation characteristics are good.
(塵化評估) (Dusting Assessment)
塵化評估,係在銅箔之處理面上貼附透明之隱形膠帶(物太郎(MonotaRO)股份有限公司,型號125076),藉由膠帶轉印法進行。 Dust evaluation was performed by attaching a transparent invisible tape (MonotaRO Co., Ltd., model number 125076) on the treated surface of the copper foil, and performing the tape transfer method.
<評估基準> <Evaluation Criteria>
◎:膠帶完全沒有粗化粒子轉印之情形。 :: There is no case where the roughened particles are transferred.
○:局部存在輕微之粗化粒子轉印之情形。 (Circle): There exists a case where a slightly roughened particle is transferred.
×;觀察到整面有粗化粒子轉印之情形(即使輕微仍整面皆有之情形)。 ×; Rough particles were transferred on the entire surface (even on the entire surface, even if slight).
<實施例2> <Example 2>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,除了(B)粗化粒子層2之形成條件之鍍時間變更為3秒以外,其他皆與實施例1相同,形成粗化粒子層(Cu)。所使用之鍍浴組成及鍍條件,如以下所述。 On the main surface of either side of a rolled copper foil (JX Metal Co., Ltd., TPC foil) with a thickness of 12 μm, except that (B) the plating time for forming the roughened particle layer 2 was changed to 3 seconds, the others were implemented. In Example 1, the roughened particle layer (Cu) was formed. The composition and conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(B)粗化粒子層2之形成(鍍Cu) (B) Formation of roughened particle layer 2 (Cu plating)
液體組成:銅20g/L;硫酸100g/L Liquid composition: copper 20g / L; sulfuric acid 100g / L
電流密度:28.6A/dm2 Current density: 28.6A / dm 2
液溫:50℃ Liquid temperature: 50 ℃
時間:3秒 Time: 3 seconds
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、熱成像表示溫度、塵化。其結果,如表1所示。 With respect to the plated surface of the obtained copper foil for heat dissipation, the surface roughness Ra and Rz, the surface area ratio, and the thermal imaging indication temperature and dusting were evaluated. The results are shown in Table 1.
<實施例3> <Example 3>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表 面上,除了(B)粗化粒子層2之形成條件之鍍時間變更為4秒以外,其他皆與實施例1相同,形成粗化粒子層(Cu)。所使用之鍍浴組成及鍍條件,如以下所述。 On the main surface of either side of a rolled copper foil (JX Metal Co., Ltd., TPC foil) with a thickness of 12 μm, except that (B) the plating time for forming the roughened particle layer 2 was changed to 4 seconds, the others were implemented. In Example 1, the roughened particle layer (Cu) was formed. The composition and conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(B)粗化粒子層2之形成(鍍Cu) (B) Formation of roughened particle layer 2 (Cu plating)
液體組成:銅20g/L;硫酸100g/L Liquid composition: copper 20g / L; sulfuric acid 100g / L
電流密度:28.6A/dm2 Current density: 28.6A / dm 2
液溫:50℃ Liquid temperature: 50 ℃
時間:4秒 Time: 4 seconds
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、熱成像表示溫度、塵化。其結果,如表1所示。 With respect to the plated surface of the obtained copper foil for heat dissipation, the surface roughness Ra and Rz, the surface area ratio, and the thermal imaging indication temperature and dusting were evaluated. The results are shown in Table 1.
<實施例4> <Example 4>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,除了(B)粗化粒子層2之形成條件之鍍時間變更為5秒以外,其他皆與實施例1相同,形成粗化粒子層(Cu)。所使用之鍍浴組成及鍍條件,如以下所述。 On the main surface of either side of a rolled copper foil (JX Metal Co., Ltd., TPC foil) with a thickness of 12 μm, except that (B) the plating time for forming the roughened particle layer 2 was changed to 5 seconds, the others were implemented. In Example 1, the roughened particle layer (Cu) was formed. The composition and conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(B)粗化粒子層2之形成(鍍Cu) (B) Formation of roughened particle layer 2 (Cu plating)
液體組成:銅20g/L;硫酸100g/L Liquid composition: copper 20g / L; sulfuric acid 100g / L
電流密度:28.6A/dm2 Current density: 28.6A / dm 2
液溫:50℃ Liquid temperature: 50 ℃
時間:5秒 Time: 5 seconds
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、熱成像表示溫度、塵化。其結果,如表1所示。 With respect to the plated surface of the obtained copper foil for heat dissipation, the surface roughness Ra and Rz, the surface area ratio, and the thermal imaging indication temperature and dusting were evaluated. The results are shown in Table 1.
<實施例5> <Example 5>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,除了(B)粗化粒子層2之形成條件之電流密度變更為38.1A/dm2,鍍時間變更為2.25秒以外,其他皆與實施例1相同,形成粗化粒子層(Cu)。所使用之鍍浴組成及鍍條件,如以下所述。 On the main surface of either side of a rolled copper foil (JX Metal Co., Ltd., TPC foil) with a thickness of 12 μm, except for (B) the formation condition of the roughened particle layer 2, the current density was changed to 38.1 A / dm 2 and the plating time Except for the change to 2.25 seconds, everything was the same as in Example 1, and a roughened particle layer (Cu) was formed. The composition and conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(B)粗化粒子層2之形成(鍍Cu) (B) Formation of roughened particle layer 2 (Cu plating)
液體組成:銅20g/L;硫酸100g/L Liquid composition: copper 20g / L; sulfuric acid 100g / L
電流密度:38.1A/dm2 Current density: 38.1A / dm 2
液溫:50℃ Liquid temperature: 50 ℃
時間:2.25秒 Time: 2.25 seconds
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、熱成像表示溫度、塵化。其結果,如表1所示。 With respect to the plated surface of the obtained copper foil for heat dissipation, the surface roughness Ra and Rz, the surface area ratio, and the thermal imaging indication temperature and dusting were evaluated. The results are shown in Table 1.
<實施例6> <Example 6>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,除了(B)粗化粒子層2之形成條件之鍍時間變更為3.75秒以外,其他皆與實施例5相同,形成粗化粒子層(Cu)。所使用之鍍浴組成及鍍條件,如 以下所述。 On the main surface of either side of a rolled copper foil (JX Metal Co., Ltd., TPC foil) with a thickness of 12 μm, except that (B) the plating time for the formation condition of the roughened particle layer 2 was changed to 3.75 seconds, all others were implemented In Example 5, the roughened particle layer (Cu) was formed. The composition and plating conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(B)粗化粒子層2之形成(鍍Cu) (B) Formation of roughened particle layer 2 (Cu plating)
液體組成:銅20g/L;硫酸100g/L Liquid composition: copper 20g / L; sulfuric acid 100g / L
電流密度:38.1A/dm2 Current density: 38.1A / dm 2
液溫:50℃ Liquid temperature: 50 ℃
時間:3.75秒 Time: 3.75 seconds
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、熱成像表示溫度、塵化。其結果,如表1所示。 With respect to the plated surface of the obtained copper foil for heat dissipation, the surface roughness Ra and Rz, the surface area ratio, and the thermal imaging indication temperature and dusting were evaluated. The results are shown in Table 1.
<實施例7> <Example 7>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,在下述所示條件範圍內,依序形成粗化粒子層(Cu)、被覆層(Ni-Co)。所使用之鍍浴組成及鍍條件,如以下所述。 A 12 μm-thick rolled copper foil (JX Metal Co., Ltd., TPC foil) has a roughened particle layer (Cu) and a coating layer (Ni-Co) sequentially formed on the main surface of the side within the conditions shown below. ). The composition and conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(A)粗化粒子層1之形成(鍍Cu) (A) Formation of roughened particle layer 1 (Cu plating)
液體組成:銅11g/L;硫酸50g/L Liquid composition: copper 11g / L; sulfuric acid 50g / L
電流密度:24.3A/dm2 Current density: 24.3A / dm 2
液溫:常溫 Liquid temperature: normal temperature
時間:1秒 Time: 1 second
次數:2次 Number of times: 2 times
(B)粗化粒子層2之形成(鍍Cu) (B) Formation of roughened particle layer 2 (Cu plating)
液體組成:銅20g/L;硫酸100g/L Liquid composition: copper 20g / L; sulfuric acid 100g / L
電流密度:38.1A/dm2 Current density: 38.1A / dm 2
液溫:50℃ Liquid temperature: 50 ℃
時間:2秒 Time: 2 seconds
次數:1次 Number of times: 1
(C)被覆層之形成(鍍Ni-Co) (C) Formation of coating layer (Ni-Co plating)
液體組成:鎳13g/L;鈷3g/L Liquid composition: nickel 13g / L; cobalt 3g / L
電流密度:0.95A/dm2 Current density: 0.95A / dm 2
pH:2.5 pH: 2.5
液溫:40℃ Liquid temperature: 40 ℃
時間:5秒 Time: 5 seconds
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、被覆層之厚度、熱成像表示溫度、塵化。其結果,如表1所示。 About the plated surface of the obtained copper foil for heat radiation, the surface roughness Ra and Rz, the surface area ratio, the thickness of the coating layer, the thermal imaging display temperature, and dusting were evaluated. The results are shown in Table 1.
又,以下說明被覆層之厚度之評估方法。 The method for evaluating the thickness of the coating layer will be described below.
(被覆層之厚度) (Thickness of coating layer)
首先,從所得之散熱用銅箔採取2cm×2cm之試料,以20體積%硝酸水溶液溶解前述試料而得到溶液。接著,使用原子吸收分光光度計(瓦里安(VARIAN)公司製,型式:AA240FS)以原子吸收光譜法對於此溶液進行定量分析,從而測定前述試料中之Ni及Co之濃度,使用Ni及Co之濃度對前述試料中之被覆層中Ni及Co之重量進行定量。藉由所得之Ni及Co之重量、Ni 之密度(8.908g/cm3)及Co之密度(8.9g/cm3)算出被覆層之體積。並且,將所得之被覆層之體積,除以試料之面積(4cm2)與測定之表面積比之乘值,從而算出被覆層之厚度(平均厚度)。 First, a 2 cm × 2 cm sample was taken from the obtained copper foil for heat dissipation, and the sample was dissolved in a 20% by volume aqueous nitric acid solution to obtain a solution. Next, this solution was quantitatively analyzed by atomic absorption spectrometry using an atomic absorption spectrophotometer (manufactured by VARIAN, type: AA240FS) to determine the concentrations of Ni and Co in the sample, and Ni and Co The concentration was used to quantify the weight of Ni and Co in the coating layer in the aforementioned sample. The volume of the coating layer was calculated from the weight of Ni and Co obtained, the density of Ni (8.908 g / cm 3 ), and the density of Co (8.9 g / cm 3 ). The thickness of the coating layer (average thickness) was calculated by dividing the volume of the obtained coating layer by the product of the area of the sample (4 cm 2 ) and the measured surface area ratio.
<實施例8> <Example 8>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,除了(C)被覆層之形成條件之鍍時間變更為80秒以外,其他皆與實施例7相同,依序形成粗化粒子層(Cu)、被覆層(Ni-Co)。所使用之鍍浴組成及鍍條件,如以下所述。 The main surface on either side of the rolled copper foil (JX Metal Co., Ltd., TPC foil) with a thickness of 12 μm was the same as in Example 7 except that the plating time of the condition for forming the coating layer was changed to 80 seconds. A roughened particle layer (Cu) and a coating layer (Ni-Co) are sequentially formed. The composition and conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(C)被覆層之形成(鍍Ni-Co) (C) Formation of coating layer (Ni-Co plating)
液體組成:鎳13g/L;鈷3g/L Liquid composition: nickel 13g / L; cobalt 3g / L
電流密度:0.95A/dm2 Current density: 0.95A / dm 2
pH:2.5 pH: 2.5
液溫:40℃ Liquid temperature: 40 ℃
時間:80秒 Time: 80 seconds
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、被覆層之厚度、熱成像表示溫度、塵化。其結果,如表1所示。 About the plated surface of the obtained copper foil for heat radiation, the surface roughness Ra and Rz, the surface area ratio, the thickness of the coating layer, the thermal imaging display temperature, and dusting were evaluated. The results are shown in Table 1.
<實施例9> <Example 9>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,除了(C)被覆層之形成條件之鍍時間變更為240秒以外,其他皆與實 施例7相同,依序形成粗化粒子層(Cu)、被覆層(Ni-Co)。所使用之鍍浴組成及鍍條件,如以下所述。 The main surface on either side of the 12 μm-thick rolled copper foil (JX Metal Co., Ltd., TPC foil) was the same as in Example 7 except that the plating time for the condition for forming the coating layer was changed to 240 seconds. A roughened particle layer (Cu) and a coating layer (Ni-Co) are sequentially formed. The composition and conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(C)被覆層之形成(鍍Ni-Co) (C) Formation of coating layer (Ni-Co plating)
液體組成:鎳13g/L;鈷3g/L Liquid composition: nickel 13g / L; cobalt 3g / L
電流密度:0.95A/dm2 Current density: 0.95A / dm 2
pH:2.5 pH: 2.5
液溫:40℃ Liquid temperature: 40 ℃
時間:240秒 Time: 240 seconds
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、被覆層之厚度、熱成像表示溫度、塵化。其結果,如表1所示。 About the plated surface of the obtained copper foil for heat radiation, the surface roughness Ra and Rz, the surface area ratio, the thickness of the coating layer, the thermal imaging display temperature, and dusting were evaluated. The results are shown in Table 1.
<實施例10> <Example 10>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,在下述所示條件範圍內,依序形成粗化粒子層(Cu)、被覆層(Ni-Co)。所使用之鍍浴組成及鍍條件,如以下所述。 A 12 μm-thick rolled copper foil (JX Metal Co., Ltd., TPC foil) has a roughened particle layer (Cu) and a coating layer (Ni-Co) sequentially formed on the main surface of the side within the conditions shown below. ). The composition and conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(A)粗化粒子層1之形成(鍍Cu) (A) Formation of roughened particle layer 1 (Cu plating)
液體組成:銅11g/L;硫酸50g/L Liquid composition: copper 11g / L; sulfuric acid 50g / L
電流密度:24.3A/dm2 Current density: 24.3A / dm 2
液溫:常溫 Liquid temperature: normal temperature
時間:1秒 Time: 1 second
次數:2次 Number of times: 2 times
(B)粗化粒子層2之形成(鍍Cu) (B) Formation of roughened particle layer 2 (Cu plating)
液體組成:銅20g/L;硫酸100g/L Liquid composition: copper 20g / L; sulfuric acid 100g / L
電流密度:38.1A/dm2 Current density: 38.1A / dm 2
液溫:50℃ Liquid temperature: 50 ℃
時間:3秒 Time: 3 seconds
次數:1次 Number of times: 1
(C)被覆層之形成(鍍Ni-Co) (C) Formation of coating layer (Ni-Co plating)
液體組成:鎳13g/L;鈷3g/L Liquid composition: nickel 13g / L; cobalt 3g / L
電流密度:0.95A/dm2 Current density: 0.95A / dm 2
pH:2.5 pH: 2.5
液溫:40℃ Liquid temperature: 40 ℃
時間:80秒 Time: 80 seconds
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、被覆層之厚度、熱成像表示溫度、塵化。其結果,如表1所示。 About the plated surface of the obtained copper foil for heat radiation, the surface roughness Ra and Rz, the surface area ratio, the thickness of the coating layer, the thermal imaging display temperature, and dusting were evaluated. The results are shown in Table 1.
<實施例11> <Example 11>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,除了(C)被覆層之形成條件之鍍時間變更為240秒以外,其他皆與實施例10相同,依序形成粗化粒子層(Cu)、被覆層(Ni-Co)。所使用之鍍浴組 成及鍍條件,如以下所述。 The main surface on either side of a 12-m-thick rolled copper foil (JX Metal Co., Ltd., TPC foil) was the same as in Example 10 except that the plating time of the condition for forming the coating layer was changed to 240 seconds. A roughened particle layer (Cu) and a coating layer (Ni-Co) are sequentially formed. The plating bath composition and plating conditions used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(C)被覆層之形成(鍍Ni-Co) (C) Formation of coating layer (Ni-Co plating)
液體組成:鎳13g/L;鈷3g/L Liquid composition: nickel 13g / L; cobalt 3g / L
電流密度:0.95A/dm2 Current density: 0.95A / dm 2
pH:2.5 pH: 2.5
液溫:40℃ Liquid temperature: 40 ℃
時間:240秒 Time: 240 seconds
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、被覆層之厚度、熱成像表示溫度、塵化。其結果,如表1所示。 About the plated surface of the obtained copper foil for heat radiation, the surface roughness Ra and Rz, the surface area ratio, the thickness of the coating layer, the thermal imaging display temperature, and dusting were evaluated. The results are shown in Table 1.
<實施例12> <Example 12>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,在下述所示條件範圍內,依序形成粗化粒子層(Cu)、被覆層(Cu-Ni-Co;Ni-Co)。所使用之鍍浴組成及鍍條件,如以下所述。 A 12 μm-thick rolled copper foil (JX Metal Co., Ltd., TPC foil) has a roughened particle layer (Cu) and a coating layer (Cu-Ni) in order within the conditions shown below on the main surface. -Co; Ni-Co). The composition and conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(A)粗化粒子層1之形成(鍍Cu) (A) Formation of roughened particle layer 1 (Cu plating)
液體組成:銅11g/L;硫酸50g/L Liquid composition: copper 11g / L; sulfuric acid 50g / L
電流密度:40A/dm2 Current density: 40A / dm 2
液溫:常溫 Liquid temperature: normal temperature
時間:1秒 Time: 1 second
次數:2次 Number of times: 2 times
(B)粗化粒子層2之形成(鍍Cu) (B) Formation of roughened particle layer 2 (Cu plating)
液體組成:銅20g/L;硫酸100g/L Liquid composition: copper 20g / L; sulfuric acid 100g / L
電流密度:19A/dm2 Current density: 19A / dm 2
液溫:50℃ Liquid temperature: 50 ℃
時間:4.5秒 Time: 4.5 seconds
次數:1次 Number of times: 1
(C)被覆下層之形成(鍍Cu-Ni-Co) (C) Formation of coated lower layer (Cu-Ni-Co plating)
液體組成:銅15.5g/L;鎳9.5g/L;鈷7.5g/L Liquid composition: copper 15.5g / L; nickel 9.5g / L; cobalt 7.5g / L
電流密度:15A/dm2 Current density: 15A / dm 2
pH:2.5 pH: 2.5
液溫:36℃ Liquid temperature: 36 ℃
時間:0.79秒 Time: 0.79 seconds
次數:2次 Number of times: 2 times
(D)被覆上層之形成(鍍Ni-Co) (D) Formation of coating upper layer (Ni-Co plating)
液體組成:鎳13g/L;鈷3g/L Liquid composition: nickel 13g / L; cobalt 3g / L
電流密度:11.9A/dm2 Current density: 11.9A / dm 2
pH:2.5 pH: 2.5
液溫:40℃ Liquid temperature: 40 ℃
時間:1秒 Time: 1 second
次數:2次 Number of times: 2 times
對於所得之散熱用銅箔,評估表面積比、熱成像表示溫 度、及塵化。其結果,如表1所示。 With respect to the obtained copper foil for heat dissipation, the surface area ratio, the temperature indicated by thermography, and dusting were evaluated. The results are shown in Table 1.
<實施例13> <Example 13>
在實施例12所得之散熱用銅箔之鍍處理層上形成聚合物膜(PVA)。聚合物膜之形成條件,如以下所述。又,實施例12所得之散熱用銅箔(粗化粒子層及被覆層)與實施例13所得之散熱用銅箔之厚度係藉由儀表測厚儀(小野測器股份有限公司,數位儀表計數器DG-1270)個別進行3點測定,並分別算出其3點之平均值。接著,由前述散熱用銅箔(實施例13)之厚度之平均值,扣除前述散熱用銅箔(實施例12)之厚度之平均值,從而算出聚合物膜之厚度(平均厚度)。 A polymer film (PVA) was formed on the plated layer of the copper foil for heat dissipation obtained in Example 12. The formation conditions of the polymer film are as follows. In addition, the thickness of the copper foil for heat dissipation (roughened particle layer and coating layer) obtained in Example 12 and the copper foil for heat dissipation obtained in Example 13 were measured by a thickness gauge (Ono Gauge Co., Ltd., Digital Meter Counter). DG-1270) was measured individually at three points, and the average of the three points was calculated. Next, the average thickness of the copper foil for heat radiation (Example 13) was subtracted from the average thickness of the copper foil for heat radiation (Example 12) to calculate the thickness (average thickness) of the polymer film.
(E)聚合物膜之形成(PVA) (E) Formation of polymer film (PVA)
溶劑:PVA6質量%水溶液 Solvent: PVA6 mass% aqueous solution
塗佈方法:金屬製塗佈器 Coating method: metal applicator
膜之厚度:1.0μm Film thickness: 1.0 μm
對於所得之散熱用銅箔,評估聚合物膜之厚度、熱成像表示溫度、及塵化。其結果,如表1所示。又,鍍處理面之表面積比係實施例12之散熱用銅箔之值。 With respect to the obtained copper foil for heat dissipation, the thickness of the polymer film, the temperature indicated by thermal imaging, and dusting were evaluated. The results are shown in Table 1. The surface area ratio of the plated surface is the value of the copper foil for heat dissipation in Example 12.
<實施例14> <Example 14>
在實施例12之散熱用銅箔之鍍處理層上形成聚合物膜(PVA)。聚合物膜形成之條件,如以下所述。 A polymer film (PVA) was formed on the plated layer of the copper foil for heat dissipation in Example 12. The conditions for forming a polymer film are as follows.
(E)聚合物膜之形成(PVA) (E) Formation of polymer film (PVA)
溶劑:PVA10質量%水溶液 Solvent: PVA 10% by mass aqueous solution
塗佈方法:金屬製塗佈器 Coating method: metal applicator
膜之厚度:5.0μm Film thickness: 5.0 μm
對於所得之散熱用銅箔,評估聚合物膜之厚度、熱成像表示溫度、及塵化。其結果,如表1所示。又,鍍處理面之表面積比係實施例12之散熱用銅箔之值。 With respect to the obtained copper foil for heat dissipation, the thickness of the polymer film, the temperature indicated by thermal imaging, and dusting were evaluated. The results are shown in Table 1. The surface area ratio of the plated surface is the value of the copper foil for heat dissipation in Example 12.
<實施例15> <Example 15>
12μm厚度之壓延銅箔(JX金屬股份有限公司,HA-V2箔)之任一側之主表面上,在下述所示條件範圍內,依序形成粗化粒子層(Cu)、被覆層(Cu-Ni-Co;Ni-Co)、防鏽層、及聚合物膜(PVA)。所使用之鍍浴組成及鍍條件,如以下所述。又,藉由儀表測厚儀對於形成聚合物膜前之銅箔(粗化粒子層、被覆層、及防鏽層)及實施例15所得散熱用銅箔之厚度分別進行3點測定,並分別算出其3點之平均值。接著,由前述散熱用銅箔(實施例15)之厚度之平均值,扣除前述銅箔之厚度之平均值,從而算出聚合物膜之厚度(平均厚度)。 A 12 μm-thick rolled copper foil (JX Metal Co., Ltd., HA-V2 foil) on either side of the main surface, in order to form a roughened particle layer (Cu) and a coating layer (Cu) within the conditions shown below -Ni-Co; Ni-Co), rust preventive layer, and polymer film (PVA). The composition and conditions of the plating bath used are as follows. In addition, the thicknesses of the copper foil (roughened particle layer, coating layer, and rust-preventive layer) before forming the polymer film and the copper foil for heat dissipation obtained in Example 15 were measured at three points with a thickness gauge, and respectively Calculate the average of the three points. Next, the average value of the thickness of the copper foil for heat dissipation (Example 15) was subtracted from the average value of the thickness of the copper foil to calculate the thickness (average thickness) of the polymer film.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(A)粗化粒子層1之形成(鍍Cu) (A) Formation of roughened particle layer 1 (Cu plating)
液體組成:銅11g/L;硫酸50g/L Liquid composition: copper 11g / L; sulfuric acid 50g / L
電流密度:45A/dm2 Current density: 45A / dm 2
液溫:常溫 Liquid temperature: normal temperature
時間:0.68秒 Time: 0.68 seconds
次數:2次 Number of times: 2 times
(B)粗化粒子層2之形成(鍍Cu) (B) Formation of roughened particle layer 2 (Cu plating)
液體組成:銅20g/L;硫酸100g/L Liquid composition: copper 20g / L; sulfuric acid 100g / L
電流密度:4.11A/dm2 Current density: 4.11A / dm 2
液溫:50℃ Liquid temperature: 50 ℃
時間:1.44秒 Time: 1.44 seconds
次數:2次 Number of times: 2 times
(C)被覆下層之形成(鍍Cu-Ni-Co) (C) Formation of coated lower layer (Cu-Ni-Co plating)
液體組成:銅15.5g/L;鎳9.5g/L;鈷7.5g/L Liquid composition: copper 15.5g / L; nickel 9.5g / L; cobalt 7.5g / L
電流密度:30.3A/dm2 Current density: 30.3A / dm 2
pH:2.5 pH: 2.5
液溫:36℃ Liquid temperature: 36 ℃
時間:0.5秒 Time: 0.5 seconds
次數:2次 Number of times: 2 times
(D)被覆上層1之形成(鍍Ni-Co) (D) Formation of coating 1 (Ni-Co plating)
液體組成:鎳13g/L;鈷3g/L Liquid composition: nickel 13g / L; cobalt 3g / L
電流密度:13.7A/dm2 Current density: 13.7A / dm 2
pH:2.5 pH: 2.5
液溫:40℃ Liquid temperature: 40 ℃
時間:0.34秒 Time: 0.34 seconds
次數:1次 Number of times: 1
(E)被覆上層2之形成(鍍Ni-Co) (E) Formation of coating 2 (Ni-Co plating)
液體組成:鎳13g/L;鈷3g/L Liquid composition: nickel 13g / L; cobalt 3g / L
電流密度:14.9A/dm2 Current density: 14.9A / dm 2
pH:2.5 pH: 2.5
液溫:40℃ Liquid temperature: 40 ℃
時間:0.34秒 Time: 0.34 seconds
次數:1次 Number of times: 1
(F)防鏽層之形成 (F) Formation of anti-rust layer
液體組成:重鉻酸鉀1~10g/L;鋅0~5g/L Liquid composition: potassium dichromate 1 ~ 10g / L; zinc 0 ~ 5g / L
pH:3~4 pH: 3 ~ 4
液溫:50~60℃ Liquid temperature: 50 ~ 60 ℃
電流密度:0~2A/dm2(為了電解鉻酸鹽處理) Current density: 0 ~ 2A / dm 2 (for electrolytic chromate treatment)
庫侖量:0~2As/dm2(為了電解鉻酸鹽處理) Coulomb amount: 0 ~ 2As / dm 2 (for electrolytic chromate treatment)
(G)聚合物膜之形成(PVA) (G) Polymer film formation (PVA)
溶劑:PVA4質量%水溶液 Solvent: PVA4 mass% aqueous solution
塗佈方法:金屬製塗佈器 Coating method: metal applicator
膜之厚度:1.0μm Film thickness: 1.0 μm
首先,形成防鏽層之前,對於被覆層之鍍處理面進行表面粗度Ra及Rz及表面積比之評估。此外,對於所得之散熱用銅箔,進行聚合物膜之厚度、熱成像表示溫度、及塵化之評估。其結果,如表1所示。 First, before forming the rust preventive layer, the surface roughness Ra and Rz and the surface area ratio of the plating-treated surface of the coating layer were evaluated. In addition, the obtained copper foil for heat dissipation was evaluated for the thickness of the polymer film, the temperature indicated by thermal imaging, and the dusting. The results are shown in Table 1.
<實施例16> <Example 16>
12μm厚度之壓延銅箔(JX金屬股份有限公司,HA-V2箔)之任一側之主表面上,除了(G)聚合物膜之形成所使用之溶劑係調製為PVA6質量%水溶液,且聚合物膜之厚度變更為1.5μm以外,其他皆與實施例15相同,依序形成粗化粒子層(Cu)、被覆層(Cu-Ni-Co;Ni-Co)、防鏽層、及聚合物膜(PVA)。 On the main surface of either side of a 12-m-thick rolled copper foil (JX Metal Co., Ltd., HA-V2 foil), except for the (G) polymer film formation, the solvent used was prepared as a PVA 6 mass% aqueous solution and polymerized. Except that the thickness of the film was changed to 1.5 μm, everything else was the same as in Example 15, and a roughened particle layer (Cu), a coating layer (Cu-Ni-Co; Ni-Co), a rust preventive layer, and a polymer were sequentially formed. Membrane (PVA).
對於所得之散熱用銅箔,進行聚合物膜之厚度、熱成像表示溫度、及塵化之評估。其結果,如表1所示。又,鍍處理面之表面粗度Ra及Rz及表面積比係實施例15之散熱用銅箔之值。 About the obtained copper foil for heat radiation, the evaluation of the thickness of a polymer film, the temperature of a thermographic display, and dusting was performed. The results are shown in Table 1. The surface roughness Ra and Rz and the surface area ratio of the plated surface are the values of the copper foil for heat radiation of Example 15.
<實施例17> <Example 17>
12μm厚度之壓延銅箔(JX金屬股份有限公司,HA-V2箔)之任一側之主表面上,除了(G)聚合物膜之形成所使用之溶劑係調製為PVA8質量%水溶液,且聚合物膜之厚度變更為2.0μm以外,其他皆與實施例15相同,依序形成粗化粒子層(Cu)、被覆層(Cu-Ni-Co;Ni-Co)、防鏽層、及聚合物膜(PVA)。 On the main surface of either side of the rolled copper foil (JX Metal Co., Ltd., HA-V2 foil) with a thickness of 12 μm, the solvent used except for the formation of the (G) polymer film was prepared as a PVA 8 mass% aqueous solution and polymerized. Except that the thickness of the material film was changed to 2.0 μm, everything else was the same as in Example 15, and a roughened particle layer (Cu), a coating layer (Cu-Ni-Co; Ni-Co), a rust preventive layer, and a polymer were sequentially formed. Membrane (PVA).
對於所得之散熱用銅箔,進行聚合物膜之厚度、熱成像表示溫度、及塵化之評估。其結果,如表1所示。又,鍍處理面之表面粗度Ra及Rz及表面積比係實施例15之散熱用銅箔之值。 About the obtained copper foil for heat radiation, the evaluation of the thickness of a polymer film, the temperature of a thermographic display, and dusting was performed. The results are shown in Table 1. The surface roughness Ra and Rz and the surface area ratio of the plated surface are the values of the copper foil for heat radiation of Example 15.
<實施例18> <Example 18>
12μm厚度之壓延銅箔(JX金屬股份有限公司,HA-V2箔)之任一側之主表面上,除了(G)聚合物膜之形成所使用之溶劑係調製為PVA8質量%水溶液,且聚合物膜之厚度變更為2.5μm以外,其他皆與實施例15相同,依序形成粗化粒子層(Cu)、被覆層(Cu-Ni-Co;Ni-Co)、防鏽層、及聚合物膜(PVA)。 On the main surface of either side of the rolled copper foil (JX Metal Co., Ltd., HA-V2 foil) with a thickness of 12 μm, the solvent used except for the formation of the (G) polymer film was prepared as a PVA 8 mass% aqueous solution and polymerized. Except that the thickness of the film was changed to 2.5 μm, everything else was the same as in Example 15, and a roughened particle layer (Cu), a coating layer (Cu-Ni-Co; Ni-Co), an anti-rust layer, and a polymer were sequentially formed. Membrane (PVA).
對於所得之散熱用銅箔,進行聚合物膜之厚度、熱成像表示溫度、及塵化之評估。其結果,如表1所示。又,鍍處理面之表面粗度Ra及Rz及表面積比係實施例15之散熱用銅箔之值。 About the obtained copper foil for heat radiation, the evaluation of the thickness of a polymer film, the temperature of a thermographic display, and dusting was performed. The results are shown in Table 1. The surface roughness Ra and Rz and the surface area ratio of the plated surface are the values of the copper foil for heat radiation of Example 15.
<實施例19> <Example 19>
12μm厚度之壓延銅箔(JX金屬股份有限公司,HA-V2箔)之任一側之主表面上,除了(G)聚合物膜之形成所使用之溶劑係調製為PVA10質量%水溶液,且聚合物膜之厚度變更為3.0μm以外,其他皆與實施例15相同,依序形成粗化粒子層(Cu)、被覆層(Cu-Ni-Co;Ni-Co)、防鏽層、及聚合物膜(PVA)。 On the main surface of either side of the rolled copper foil (JX Metal Co., Ltd., HA-V2 foil) with a thickness of 12 μm, the solvent used except for the formation of the (G) polymer film was prepared as a 10% by mass aqueous solution of PVA and polymerized. Except that the thickness of the material film was changed to 3.0 μm, everything else was the same as in Example 15, and a roughened particle layer (Cu), a coating layer (Cu-Ni-Co; Ni-Co), an anti-rust layer, and a polymer were sequentially formed. Membrane (PVA).
對於所得之散熱用銅箔,進行聚合物膜之厚度、熱成像表示溫度、及塵化之評估。其結果,如表1所示。又,鍍處理面之表面粗度Ra及Rz及表面積比係實施例15之散熱用銅箔之值。 About the obtained copper foil for heat radiation, the evaluation of the thickness of a polymer film, the temperature of a thermographic display, and dusting was performed. The results are shown in Table 1. The surface roughness Ra and Rz and the surface area ratio of the plated surface are the values of the copper foil for heat radiation of Example 15.
<比較例1> <Comparative example 1>
對於實施例1所使用之壓延銅箔(JX金屬股份有限公司,TPC箔),進行表面粗度Ra及Rz、表面積比、熱成像表示溫度、塵化之評估。其結果,如表1所示。 With respect to the rolled copper foil (JX Metal Co., Ltd., TPC foil) used in Example 1, the surface roughness Ra and Rz, the surface area ratio, the temperature indicated by thermal imaging, and the dusting were evaluated. The results are shown in Table 1.
<比較例2> <Comparative example 2>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,除了(B)粗化粒子層2之形成條件之電流密度變更為57.1A/dm2,鍍時間變更為25秒以外,其他皆與實施例1相同,形成粗化粒子層(Cu)。所使用之鍍浴組成及鍍條件,如以下所述。 On the main surface of either side of a rolled copper foil (JX Metal Co., Ltd., TPC foil) with a thickness of 12 μm, except for (B) the formation condition of the roughened particle layer 2, the current density was changed to 57.1 A / dm 2 and the plating time Except for the change to 25 seconds, everything was the same as in Example 1, and a roughened particle layer (Cu) was formed. The composition and conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(B)粗化粒子層2之形成(鍍Cu) (B) Formation of roughened particle layer 2 (Cu plating)
液體組成:銅20g/L;硫酸100g/L Liquid composition: copper 20g / L; sulfuric acid 100g / L
電流密度:57.1A/dm2 Current density: 57.1A / dm 2
液溫:50℃ Liquid temperature: 50 ℃
時間:25秒 Time: 25 seconds
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、熱成像表示溫度、塵化。其結果,如表1所示。 With respect to the plated surface of the obtained copper foil for heat dissipation, the surface roughness Ra and Rz, the surface area ratio, and the thermal imaging indication temperature and dusting were evaluated. The results are shown in Table 1.
<比較例3> <Comparative example 3>
12μm厚度之壓延銅箔(JX金屬股份有限公司,TPC箔)之任一側之主表面上,在下述所示條件範圍內,依序形成粗化粒子層(Cu)、被覆層(Ni-Co)。所使用之鍍浴組成及鍍條件,如以下所述。 A 12 μm-thick rolled copper foil (JX Metal Co., Ltd., TPC foil) has a roughened particle layer (Cu) and a coating layer (Ni-Co) sequentially formed on the main surface of the side within the conditions shown below. ). The composition and conditions of the plating bath used are as follows.
[鍍浴組成及鍍條件] [Plating bath composition and plating conditions]
(A)粗化粒子層1之形成(鍍Cu) (A) Formation of roughened particle layer 1 (Cu plating)
液體組成:銅11g/L;硫酸50g/L Liquid composition: copper 11g / L; sulfuric acid 50g / L
電流密度:24.3A/dm2 Current density: 24.3A / dm 2
液溫:常溫 Liquid temperature: normal temperature
時間:1秒 Time: 1 second
次數:2次 Number of times: 2 times
(B)粗化粒子層2之形成(鍍Cu) (B) Formation of roughened particle layer 2 (Cu plating)
液體組成:銅20g/L;硫酸100g/L Liquid composition: copper 20g / L; sulfuric acid 100g / L
電流密度:38.1A/dm2 Current density: 38.1A / dm 2
液溫:50℃ Liquid temperature: 50 ℃
時間:3.75秒 Time: 3.75 seconds
次數:1次 Number of times: 1
(C)被覆層之形成(鍍Ni-Co) (C) Formation of coating layer (Ni-Co plating)
液體組成:鎳13g/L;鈷3g/L Liquid composition: nickel 13g / L; cobalt 3g / L
電流密度:0.95A/dm2 Current density: 0.95A / dm 2
pH:2.5 pH: 2.5
液溫:40℃ Liquid temperature: 40 ℃
時間:5秒 Time: 5 seconds
次數:1次 Number of times: 1
對於所得之散熱用銅箔之鍍處理面,評估表面粗度Ra及Rz、表面積比、被覆層之厚度、熱成像表示溫度、塵化。其結果,如表1所示。 About the plated surface of the obtained copper foil for heat radiation, the surface roughness Ra and Rz, the surface area ratio, the thickness of the coating layer, the thermal imaging display temperature, and dusting were evaluated. The results are shown in Table 1.
藉實施例1~19,可確認到由於所具有鍍處理層之表面積比係在期望之表面積比內,故發熱體所生之熱可良好地散熱。其中,實施例7~11,可確認到由於鍍處理層之粗化粒子上係形成有Ni-Co所成被覆層,故發熱體所生之熱可進一步良好地散熱。此外,實施例13~19,可確認到由於在Ni-Co所成被覆層上係具有聚合物膜,故發熱體所生之熱可更進一步良好地散熱,且塵化之評估亦良好。其中,實施例14、17~19,可確認到由於聚合物膜之厚度係2.0μm以上,故發熱體所生之熱可進一步良好地散熱。 According to Examples 1 to 19, it was confirmed that since the surface area ratio of the plating treatment layer included was within a desired surface area ratio, the heat generated by the heating element could be well dissipated. Among them, in Examples 7 to 11, it was confirmed that the coating layer made of Ni-Co was formed on the roughened particles of the plating treatment layer, so that the heat generated by the heating element could be better dissipated. In addition, in Examples 13 to 19, it was confirmed that since a polymer film is provided on the coating layer made of Ni-Co, the heat generated by the heating element can be further radiated well, and the evaluation of dusting is also good. Among them, in Examples 14 and 17 to 19, it was confirmed that the thickness of the polymer film was 2.0 μm or more, so that the heat generated by the heating element could be further radiated well.
使用本發明之一實施型態之散熱用銅箔之散熱部件中,散熱特性優異。藉此,本發明提供一種有用之技術,其在電子設備之開發推進的同時,因應小型化或高機能化等之要求,不會因所使用之電子部件之發熱而導致故障缺陷等。 A heat radiation member using the copper foil for heat radiation according to an embodiment of the present invention has excellent heat radiation characteristics. Accordingly, the present invention provides a useful technology that, while advancing the development of electronic equipment, responds to the requirements of miniaturization or high performance, and does not cause faults and the like due to the heat generation of the electronic components used.
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