TW201928096A - Continuous film coating device - Google Patents
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Abstract
Description
本發明係關於一種連續式的鍍膜裝置，尤指一種線性移動的連續式的鍍膜裝置。The present invention relates to a continuous coating apparatus, and more particularly to a linearly moving continuous coating apparatus.
按，蝕刻係為一種透過化學反應或物理撞擊的方式對於材料進行移除的技術，而傳統的蝕刻機台主要中心處設置一機器手臂，並在機器手臂的周圍依序間隔環設傳送組、定位組、反應組及清潔組，於實際使用時，操作者透過機器手臂將待加工的晶圓進行移動、定位及蝕刻加工。Pressing is a technique for removing materials by chemical reaction or physical impact. The conventional etching machine is provided with a robot arm at the center of the machine, and a transfer group is arranged around the robot arm. The positioning group, the reaction group and the cleaning group, in actual use, the operator moves, positions and etches the wafer to be processed through the robot arm.
然而，運用機器手臂移動待加工的晶圓需花費很多的時間，而且機器手臂需要定期維修及校正，防止影響操作的準確性，而且待加工的晶圓在移動的過程中可能會發生掉落而毀損的情形。However, it takes a lot of time to move the wafer to be processed by using the robot arm, and the robot arm needs regular maintenance and correction to prevent the accuracy of the operation, and the wafer to be processed may fall during the movement. The situation of damage.
因此，業者為了解決上述情況發生進而開發一種線性移動的蝕刻設備，如台灣專利第I540634號及第I582898號，其中，台灣專利第I582898號揭示一種用於生產線的可移動式載盤裝置，其用來承載一待處理基板並於一生產線中的傳送機構上進行加工移動，並在蝕刻加工中，係將金屬導體對應接觸電極板的電源載入區進行電漿蝕刻。Therefore, in order to solve the above-mentioned situation, the manufacturer has developed a linearly-moving etching apparatus, such as the Taiwan Patent No. I540634 and the No. I582898, wherein the Taiwan Patent No. I582898 discloses a movable carrier device for a production line, which is used. The substrate to be processed is carried and processed on a transport mechanism in a production line, and in the etching process, the metal conductor is plasma-etched corresponding to the power loading region of the contact electrode plate.
但是，在製程加工過程中，待處理基板會先進行沉積、濺鍍等步驟以於待處理基板上形成所需元件結構，但沉積及濺鍍的步驟不僅會於待處理基板上形成元件結構，同時也會將這些沉積、濺鍍材料形成於絕緣單元的表面，使原先作為絕緣之用的絕緣單元的表面具有導電性，影響金屬導體所產生的電場作用，進而分散或擴散了待處理基板的團聚範圍，因此可能會於後續進行電漿蝕刻時，降低蝕刻加工的效率。However, in the process of processing, the substrate to be processed is first deposited, sputtered, etc. to form a desired component structure on the substrate to be processed, but the deposition and sputtering steps not only form a component structure on the substrate to be processed, At the same time, these deposition and sputtering materials are formed on the surface of the insulating unit, so that the surface of the insulating unit originally used for insulation has conductivity, which affects the electric field generated by the metal conductor, thereby dispersing or diffusing the substrate to be processed. The agglomeration range may therefore reduce the efficiency of the etching process during subsequent plasma etching.
為了解決習知線性移動的蝕刻設備影響待處理基板的蝕刻效率，本發明提供一種連續式的鍍膜裝置，其可避免待處理基材濺鍍到周圍，而導致母載盤與子載盤產生短路，藉以提升待處理基材的加工效率。In order to solve the problem that the conventional linear moving etching device affects the etching efficiency of the substrate to be processed, the present invention provides a continuous coating device which can prevent the substrate to be processed from being sputtered to the surroundings, thereby causing a short circuit between the mother carrier and the daughter carrier. In order to improve the processing efficiency of the substrate to be treated.
本發明之一項實施例提供一種連續式的鍍膜裝置，其包含：一機體以及設在機體的載盤模組。機體具有一進閘口、一出閘口以及中空狀的一鍍膜腔體，蝕刻模組位於進閘口及出閘口間且彼此相互連通，載盤模組由進閘口進入鍍膜腔體並往出閘口方向位移，載盤模組包含一母載盤、一子載盤及一固設件，子載盤用於承載一待處理基材，母載盤具有一用以容置子載盤及固設件的容置凹槽，固設件設置於母載盤及子載盤之間，子載盤藉由固設件的設置而與母載盤的內周緣間隔一空間以形成一隔絕空間，且該隔絕空間延伸至容置凹槽的側邊，形成一沉積缺口，使子載盤與母載盤之間隔距離為2毫米至5毫米。An embodiment of the present invention provides a continuous coating apparatus comprising: a body and a carrier module disposed on the body. The body has a gate, a gate and a hollow coating chamber. The etching module is located between the gate and the gate and communicates with each other. The carrier module enters the coating chamber from the gate and is displaced toward the gate. The carrier module comprises a mother carrier disk, a sub-carrier disk and a fixing component, the sub-carrier disk is used for carrying a substrate to be processed, and the mother carrier disk has a device for accommodating the sub-carrier disk and the fixing component. The recess is disposed, the fixing member is disposed between the mother carrier and the sub-carrier tray, and the sub-carrier is separated from the inner circumference of the mother carrier by a setting of the fixing member to form an isolated space, and the isolation is provided. The space extends to the side of the receiving recess to form a deposition gap such that the sub-carrier is spaced from the mother carrier by a distance of 2 mm to 5 mm.
藉此，本發明於實際操作時，子載盤可用來承載複數個或者單一大面積的待處理基材，藉以增加待處理基材加工的有效面積，而且子載盤與母載盤間隔的隔絕空間及沉積缺口，可防止待處理基材在鍍膜處理過程而濺鍍到母載盤以及設置在容置凹槽的固設件，而導致母載盤與子載盤產生短路，提升待處理基材的加工效率。Therefore, in the actual operation of the present invention, the sub-tray can be used to carry a plurality of or a single large area of the substrate to be processed, thereby increasing the effective area of the substrate to be processed, and the sub-carrier is separated from the mother carrier. The space and the deposition gap prevent the substrate to be treated from being sputtered to the mother carrier and the fixing member disposed in the receiving groove during the coating process, thereby causing short circuit between the mother carrier and the carrier carrier, and improving the base to be treated. Processing efficiency of materials.
為便於說明本發明於上述發明內容一欄中所表示的中心思想，茲以具體實施例表達。實施例中各種不同物件係按適於列舉說明之比例，而非按實際元件的比例予以繪製，合先敘明。For the convenience of the description, the central idea expressed by the present invention in the column of the above summary of the invention is expressed by the specific embodiments. The various items in the examples are drawn to scale in the description and not to the actual elements, and are described in the foregoing.
本文所用單數形式「一」、「一個」及「該」亦包含複數形式，除非上下文清楚地指示其他情況。再者應瞭解，當用於此說明書時，術語「包括」及/或「包含」指定存在所述特徵、機體、模組及/或單元，但是不排除存在或附加一或多個其他特徵、機體、模組及/或單元。The singular forms "a", "an" and "the" In addition, it should be understood that the terms "including" and/or "comprising", when used in the specification, are intended to mean the presence of the features, elements, modules and/or units, but do not exclude the presence or addition of one or more other features, Body, module and / or unit.
請參閱圖1及圖7所示，本發明提供一種連續式的鍍膜裝置，其包含一機體10、一載盤模組20、一活動式導電模組30、一氣孔板40及一活動式接地模組50，載盤模組20、活動式導電模組30、氣孔板40及活動式接地模組50設置在機體10。Referring to FIG. 1 and FIG. 7 , the present invention provides a continuous coating device comprising a body 10 , a carrier module 20 , a movable conductive module 30 , a gas plate 40 and a movable grounding The module 50, the carrier module 20, the movable conductive module 30, the air vent plate 40 and the movable grounding module 50 are disposed on the body 10.
機體10，其設有略呈長方形的一進閘口11及一出閘口12，於本實施例中，進閘口11與出閘口12相互遠離設於機體10的兩側，其中，機體10靠近出閘口12處設有一位置感測器15，機體10於進閘口11及出閘口12之間設有中空狀的一鍍膜腔體13，且鍍膜腔體13與進閘口11及出閘口12相互連通，而鍍膜腔體13連接有一真空泵浦(圖未示)，俾使鍍膜腔體13可在加工過程中維持在真空狀態，鍍膜腔體13的內部更設有一傳送模組14，於本發明實施例中，傳送模組14係為導軌傳動滾輪，其沿進閘口11及出閘口12的軸線方向分布設置在鍍膜腔體13內部的前後兩側以及底側。The body 10 is provided with a slightly rectangular opening 11 and a gate 12. In this embodiment, the gate 11 and the gate 12 are away from each other on both sides of the body 10, wherein the body 10 is close to the gate. A position sensor 15 is disposed at 12, and a hollow coating chamber 13 is disposed between the gate 11 and the gate 12, and the coating chamber 13 communicates with the gate 11 and the gate 12, and The coating chamber 13 is connected to a vacuum pump (not shown), so that the coating chamber 13 can be maintained in a vacuum state during processing, and the interior of the coating chamber 13 is further provided with a transfer module 14, which is in the embodiment of the present invention. The transport module 14 is a rail drive roller which is disposed on the front and rear sides and the bottom side of the interior of the coating chamber 13 along the axial direction of the gate 11 and the gate 12.
載盤模組20，其設置於傳送模組14上並由進閘口11進入鍍膜腔體13往出閘口12方向位移，最後藉由位置感測器15進行定位。載盤模組20包含一母載盤21、一子載盤22及一固設件23，母載盤21具有容置子載盤22與固設件23的一容置凹槽211，且母載盤21更具有貫穿連通容置凹槽211的一連接通口212，於本發明實施例中，連接通口212垂直或背對待處理基材200貫穿於母載盤21的一側，子載盤22主要作為承載待處理基材200，其中，固設件23可以為絕緣材質所構成，而使子載盤22不與母載盤21導電接觸；子載盤22可提供承載複數個待處理基材200，或者承載一個大面積的待處理基材200，固設件23設置於母載盤21及子載盤22之間，藉以子載盤22透過固設件23的設置而與母載盤21的內周緣間隔一空間以形成一隔絕空間24，並使隔絕空間24延伸至容置凹槽211的側邊，藉以子載盤22的側邊外周緣與母載盤21的內周緣間隔形成一沉積缺口25，且子載盤22與母載盤21之間隔空間距離為2毫米至5毫米，使子載盤22的側邊不會接觸到母載盤21。需特別說明的是，隔絕空間24係指電漿不會成形的區域，而經研究得知，當兩金屬體之間的距離介於2豪米至5豪米，且兩金屬體之其中之一為接地時，兩金屬體之間便不會產生電漿，而為隔絕空間24。The loading module 20 is disposed on the transport module 14 and is displaced by the entrance gate 11 into the coating chamber 13 to the gate 12, and finally positioned by the position sensor 15. The carrier module 20 includes a mother carrier 21, a sub-carrier 22, and a fixing member 23. The mother carrier 21 has a receiving recess 211 for receiving the sub-carrier 22 and the fixing member 23. The carrier 21 further has a connecting port 212 extending through the connecting receiving recess 211. In the embodiment of the present invention, the connecting port 212 is perpendicular or the side of the substrate 200 to be processed is penetrated from the side of the mother carrier 21, The tray 22 is mainly used as the substrate 200 to be processed, wherein the fixing member 23 can be made of an insulating material, so that the sub-tray 22 is not in conductive contact with the mother carrier 21; the sub-carrier 22 can provide a plurality of to-be-processed The substrate 200 or the substrate 200 to be processed is disposed on a large area, and the fixing member 23 is disposed between the mother carrier 21 and the sub-carrier 22, whereby the sub-carrier 22 is disposed through the fixing member 23 and the mother carrier The inner circumference of the disk 21 is spaced apart by a space to form an insulating space 24, and the isolation space 24 is extended to the side of the accommodating recess 211, whereby the outer peripheral edge of the side of the sub-tray 22 is spaced from the inner circumference of the mother carrier 21. A deposition gap 25 is formed, and the distance between the sub-tray 22 and the mother carrier 21 is 2 mm to 5 mm, so that the sides of the sub-tray 22 are not The mother carrier 21 will be touched. It should be specially noted that the isolation space 24 refers to the area where the plasma will not be formed, and it has been studied that when the distance between the two metal bodies is between 2 and 5 meters, and the two metal bodies are When grounding is done, no plasma is generated between the two metal bodies, and the space 24 is isolated.
活動式導電模組30，其活動穿伸於鍍膜腔體13，活動式導電模組30包含有一移載單元31以及一第一電極32，第一電極32套設於移載單元31，其中，第一電極32的末端於機體10外，而第一電極32的前端穿伸於鍍膜腔體13內，於本發明實施例中，第一電極32的前端軸徑小於連接通口212的口徑。移載單元31包含有一護蓋311及一隔絕件312，護蓋311位於鍍膜腔體13內並套設於第一電極32的前端部分，而且護蓋311的前端環設有一凸塊313，隔絕件312設於第一電極32與護蓋311間，其中，隔絕件312係為鐵氟龍材質，其具有隔熱及絕緣的效果。The movable conductive module 30 is slidably disposed in the coating chamber 13. The movable conductive module 30 includes a transfer unit 31 and a first electrode 32. The first electrode 32 is sleeved on the transfer unit 31. The front end of the first electrode 32 extends outside the body 10, and the front end of the first electrode 32 extends through the coating cavity 13. In the embodiment of the invention, the front end axis of the first electrode 32 is smaller than the diameter of the connecting port 212. The transfer unit 31 includes a cover 311 and an insulating member 312. The cover 311 is disposed in the coating cavity 13 and sleeved on the front end portion of the first electrode 32. The front end of the cover 311 is provided with a bump 313 for isolating. The member 312 is disposed between the first electrode 32 and the cover 311. The insulating member 312 is made of Teflon material, which has the effects of heat insulation and insulation.
移載單元31具有一導電位置及一斷電位置，於導電位置時，移載單元31將第一電極32穿過母載盤21的連接通口212，並與子載盤22電性連接並同時不與母載盤21電性接觸，此時護蓋311上的凸塊313會緊密抵接在母載盤21的外圍；於斷電位置時，移載單元31將護蓋311的凸塊313脫離母載盤21，並同時將第一電極32移出遠離至母載盤21外。除此之外，護蓋311的材質為導電材質，而與母載盤21可為電性導通的狀態，因而當母載盤21接地時，護蓋311同樣也為接地的狀態。The transfer unit 31 has a conductive position and a power-off position. When the conductive unit 31 is in the conductive position, the transfer unit 31 passes the first electrode 32 through the connection port 212 of the mother carrier 21 and is electrically connected to the sub-tray 22 and At the same time, it does not make electrical contact with the mother carrier 21, and the bump 313 on the cover 311 will abut against the periphery of the mother carrier 21; in the power-off position, the transfer unit 31 will bump the cover 311. The 313 is detached from the mother carrier 21 and simultaneously moves the first electrode 32 away from the mother carrier 21. In addition, the material of the cover 311 is a conductive material, and the mother carrier 21 can be electrically connected. Therefore, when the mother carrier 21 is grounded, the cover 311 is also grounded.
此外，活動式導電模組30更具有連接移載單元31之一動力單元34，動力單元34係為汽缸動力單元，其設於移載單元31之末端並位於機體10外，動力單元34用於驅動移載單元31於導電位置與斷電位置間位移，當動力單元34驅動移載單元31於導電位置時，活動式導電模組30之第一電極32電性連接子載盤22；換言之，當動力單元34驅動移載單元31於斷電位置時，藉以第一電極32遠離母載盤21，於本發明又一實施例中，活動式導電模組30可安裝於鍍膜腔體13內。In addition, the movable conductive module 30 further has a power unit 34 connected to the transfer unit 31. The power unit 34 is a cylinder power unit, which is disposed at the end of the transfer unit 31 and located outside the body 10. The power unit 34 is used for The driving transfer unit 31 is displaced between the conductive position and the power-off position. When the power unit 34 drives the transfer unit 31 to the conductive position, the first electrode 32 of the movable conductive module 30 is electrically connected to the sub-tray 22; in other words, When the power unit 34 drives the transfer unit 31 in the power-off position, the first electrode 32 is away from the mother carrier 21, and in another embodiment of the invention, the movable conductive module 30 can be installed in the coating chamber 13.
氣孔板40，其設於鍍膜腔體13的頂側，氣孔板40對應設於待處理基材200遠離子載盤22之一側，氣孔板40與子載盤22間隔一距離以形成一鍍膜處理區41，其中，氣孔板40設有一遮蓋42及一第二電極43，遮蓋42裝設在鍍膜腔體13內部，且遮蓋42具有對應容納氣孔板40之一容納凹槽421，而氣孔板40透過一鎖固件60設置在遮蓋42的容納凹槽421，並與遮蓋42間隔形成另一隔絕空間44，於本發明實施例中，氣孔板40與遮蓋42的間隔距離為2毫米至5毫米。The venting plate 40 is disposed on the top side of the coating chamber 13. The venting plate 40 is correspondingly disposed on one side of the remote ion carrier 22 of the substrate 200 to be treated, and the venting plate 40 is spaced apart from the sub-disc 22 to form a coating. The processing area 41, wherein the air venting plate 40 is provided with a cover 42 and a second electrode 43, the cover 42 is disposed inside the coating cavity 13, and the cover 42 has a receiving groove 421 corresponding to the accommodating vent plate 40, and the vent plate 40 is disposed through a locking groove 421 of the cover 42 and spaced apart from the cover 42 to form another insulating space 44. In the embodiment of the present invention, the distance between the air plate 40 and the cover 42 is 2 mm to 5 mm. .
第二電極43貫穿鍍膜腔體13並伸入連接遮蓋42及氣孔板40，其中，於本發明實施例中，第一電極32連接正電源70，第二電極43為接地，但本發明不限於此，第二電極43也可與所述第一電極32彼此連接不同的電源。The second electrode 43 extends through the coating chamber 13 and extends into the connection cover 42 and the vent plate 40. In the embodiment of the present invention, the first electrode 32 is connected to the positive power source 70, and the second electrode 43 is grounded, but the invention is not limited thereto. Therefore, the second electrode 43 can also be connected to the first electrode 32 to be connected to different power sources.
活動式接地模組50，其包含有一接地電極51，而活動式接地模組50具有將接地電極51與母載盤21電性連接的一接地位置，以及將接地電極51遠離至母載盤21的一脫離位置，於本發明實施例中，活動式接地模組50具有連接接地電極51之一驅動模組52，驅動模組52主要用來驅動接地電極51於接地位置與脫離位置間往復位移，且驅動模組52的作動時機與活動式導電模組30的動力單元34相同。The movable grounding module 50 includes a grounding electrode 51, and the movable grounding module 50 has a grounding position for electrically connecting the grounding electrode 51 and the mother carrier 21, and moving the grounding electrode 51 away from the mother carrier 21 In the embodiment of the present invention, the movable grounding module 50 has a driving module 52 connected to the grounding electrode 51. The driving module 52 is mainly used to drive the grounding electrode 51 to reciprocate between the grounding position and the disengaged position. The driving timing of the driving module 52 is the same as that of the power unit 34 of the movable conductive module 30.
具體來說，當活動式導電模組30的第一電極32透過動力單元34活動電性連接子載盤22時，而活動式接地模組50的驅動模組52也會同時驅動接地電極51電性連接母載盤21，並使接地電極51透過母載盤21接地連接移載單元31的護蓋311。Specifically, when the first electrode 32 of the movable conductive module 30 is electrically connected to the sub-tray 22 through the power unit 34, the driving module 52 of the movable grounding module 50 also drives the ground electrode 51 at the same time. The mother carrier 21 is connected to the ground, and the ground electrode 51 is grounded to the cover 311 of the transfer unit 31 through the mother carrier 21.
請配合參閱圖2至圖7所示，需特別說明的是，圖5、圖6及圖7為了結構上更為清楚的表現，而採用圖2的簡易結構示意，並未如圖2般清楚的描述每個物件的形狀。於本發明實際進行蝕刻加工程序時，待處理基材200置放在載盤模組20的子載盤22內，其中，待處理基材200的數量可為複數個，或者單一大面積的待處理基材200，接著載盤模組20透過傳送模組14轉動帶動方式由機體10的進閘口11軸向進入鍍膜腔體13內，此時鍍膜腔體13內部經由真空泵浦維持在真空狀態，接著藉由位置感測器15以感應方式控制載盤模組20於鍍膜腔體13內部的位置，使載盤模組20位置相對對應在氣孔板40的正下方，且母載盤21的連接通口212對應活動式導電模組30的移載單元31，此時移載單元31於斷電位置，活動式接地模組50於脫離位置。Please refer to FIG. 2 to FIG. 7 . It should be particularly noted that FIG. 5 , FIG. 6 and FIG. 7 are not clear as shown in FIG. 2 for the structurally clearer performance and the simple structure of FIG. 2 . Describe the shape of each object. When the etching process is actually performed in the present invention, the substrate to be processed 200 is placed in the sub-tray 22 of the carrier module 20, wherein the number of substrates 200 to be processed may be plural, or a single large area to be processed. The substrate 200 is processed, and then the tray module 20 is axially inserted into the coating chamber 13 from the gate 11 of the body 10 through the rotation of the transport module 14 . At this time, the interior of the coating chamber 13 is maintained in a vacuum state by vacuum pumping. Then, the position of the carrier module 20 in the interior of the coating chamber 13 is inductively controlled by the position sensor 15, so that the position of the carrier module 20 is relatively directly below the air plate 40, and the connection of the mother carrier 21 is performed. The port 212 corresponds to the transfer unit 31 of the movable conductive module 30. At this time, the transfer unit 31 is in the power-off position, and the movable ground module 50 is in the disengaged position.
請配合圖4及圖6所示，隨後活動式導電模組30的動力單元34驅動移載單元31於導電位置，此時移載單元31相對鍍膜腔體13往母載盤21的連接通口212移動，藉以護蓋311的凸塊313會緊密抵接在連接通口212外圍，第一電極32會穿過連接通口212並且與母載盤21不接觸狀況活動電性連接子載盤22；此外，活動式接地模組50於接地位置，使接地電極51電性連接母載盤21，而且接地電極51透過母載盤21接地連接護蓋311。As shown in FIG. 4 and FIG. 6 , the power unit 34 of the movable conductive module 30 drives the transfer unit 31 to the conductive position. At this time, the transfer unit 31 is connected to the mother carrier 21 of the coating chamber 13 . 212 moves, so that the bump 313 of the cover 311 will abut against the periphery of the connection port 212, and the first electrode 32 will pass through the connection port 212 and be in contact with the mother carrier 21 to electrically connect the sub-carrier 22 In addition, the movable grounding module 50 is grounded, the grounding electrode 51 is electrically connected to the mother carrier 21, and the grounding electrode 51 is grounded through the mother carrier 21 to the cover 311.
據此，位於鍍膜腔體13內的氣體在鍍膜處理區41受到強電場的作用，進而使子載盤22上的待處理基材200集中進行電漿蝕刻(Plasma Etching)，而於電漿蝕刻過程中，母載盤21與子載盤22間隔的隔絕空間24及沉積缺口25可控制電漿範圍維持在待處理基材200的蝕刻範圍內，防止待處理基材200上的電漿範圍分散，提升待處理基材200的電漿蝕刻的效率。Accordingly, the gas located in the coating chamber 13 is subjected to a strong electric field in the coating processing zone 41, thereby causing the substrate to be processed 200 on the sub-tray 22 to be concentrated for plasma etching, and plasma etching. During the process, the isolated space 24 and the deposition gap 25 of the mother carrier 21 and the sub-tray 22 are controlled to maintain the plasma range within the etching range of the substrate 200 to be treated, preventing the plasma range on the substrate 200 to be processed from being dispersed. The efficiency of plasma etching of the substrate 200 to be treated is improved.
最後，本發明於完成蝕刻加工後，經由動力單元34往遠離母載盤21之方向拉動，而使移載單元31的護蓋311上之凸塊313脫離母載盤21，並同時將第一電極32移出遠離至母載盤21外，因此移載單元31回復至斷電位置，隨後使蝕刻完的待處理基材200隨著載盤模組20移動至出閘口12進行出料。Finally, after the etching process is completed, the power unit 34 is pulled away from the mother carrier 21 through the power unit 34, so that the bump 313 on the cover 311 of the transfer unit 31 is separated from the mother carrier 21, and at the same time, the first The electrode 32 is moved away from the mother carrier 21, so that the transfer unit 31 returns to the power-off position, and then the etched substrate 200 to be processed is moved to the gate 12 with the tray module 20 for discharging.
另外，請配合參閱圖2及圖7所示，當本發明將第二電極43連接於另一電源71時，此時第一電極32與第二電極43的電源70、71頻率可為不同或者相位上有所差異，藉此在進行蝕刻加工時可進一步提升鍍膜處理區41的電場，大幅提高待處理基材200的蝕刻效率。In addition, as shown in FIG. 2 and FIG. 7 , when the second electrode 43 is connected to another power source 71 according to the present invention, the frequencies of the power sources 70 and 71 of the first electrode 32 and the second electrode 43 may be different or There is a difference in phase, whereby the electric field of the coating processing zone 41 can be further increased during the etching process, and the etching efficiency of the substrate 200 to be processed is greatly improved.
藉此，本發明具有下列特點：Thereby, the invention has the following characteristics:
1.藉由子載盤22與母載盤21間隔的隔絕空間24及沉積缺口25，可避免待處理基材200濺鍍到周圍，而導致母載盤21與子載盤22產生短路，藉以提升待處理基材200的加工效率。1. The insulating space 24 and the deposition gap 25 separated from the mother carrier 21 by the sub-tray 22 can prevent the substrate 200 to be processed from being sputtered to the surroundings, thereby causing the mother carrier 21 and the sub-carrier 22 to be short-circuited, thereby improving Processing efficiency of the substrate 200 to be treated.
2.待處理基材20進行濺鍍或沉積時，於子載盤22及母載盤21上所形成的殘餘材料之厚度遠小於沉積缺口25，因此該沉積缺口25仍可作為子載盤22與母載盤21之間隔，形成隔絕空間24，以避免電漿區域分散的問題。2. When the substrate 20 to be treated is sputtered or deposited, the thickness of the residual material formed on the sub-tray 22 and the mother carrier 21 is much smaller than the deposition gap 25, so the deposition gap 25 can still serve as the sub-tray 22 An isolation space 24 is formed spaced apart from the mother carrier 21 to avoid the problem of dispersion of the plasma region.
3.活動式導電模組30係在載盤模組20的側邊或底部活動穿伸導電子載盤22，藉以不用直接升降抬升載盤模組20進行電漿蝕刻，減少載盤模組20整體晃動並防止承載在載盤模組20的待處理基材200產生蝕刻偏差，避免影響蝕刻加工的效率。3. The movable conductive module 30 is configured to extend and extend the conductive sub-tray 22 on the side or the bottom of the carrier module 20, so that the plasma chuck is not directly lifted and lifted by the lifting tray module 20, and the carrier module 20 is reduced. The overall shaking prevents the etching of the substrate 200 to be processed carried on the carrier module 20 from occurring, thereby avoiding the influence of the etching process.
4.本發明將第二電極43連接於另一電源71時，此時第一電極32與第二電極43的電源70、71頻率可為不同或者相位上有所差異，因此當活動式導電模組30啟動移載單元31於導電位置時，可進一步提升鍍膜處理區41的電場，大幅提高待處理基材200的蝕刻效率。4. When the second electrode 43 is connected to another power source 71, the frequency of the power sources 70, 71 of the first electrode 32 and the second electrode 43 may be different or different in phase, so when the movable conductive mode When the group 30 starts the transfer unit 31 in the conductive position, the electric field of the coating processing area 41 can be further increased, and the etching efficiency of the substrate 200 to be processed is greatly improved.
以上所舉實施例僅用以說明本發明而已，非用以限制本發明之範圍。舉凡不違本發明精神所從事的種種修改或變化，俱屬本發明意欲保護之範疇。The above embodiments are merely illustrative of the invention and are not intended to limit the scope of the invention. Any modifications or variations that are made without departing from the spirit of the invention are intended to be protected.
200‧‧‧待處理基材 200‧‧‧Substrate to be treated
10‧‧‧機體 10‧‧‧ body
11‧‧‧進閘口 11‧‧‧ entrance gate
12‧‧‧出閘口 12‧‧‧ exit
13‧‧‧鍍膜腔體 13‧‧‧coating cavity
14‧‧‧傳送模組 14‧‧‧Transmission module
15‧‧‧位置感測器 15‧‧‧ position sensor
20‧‧‧載盤模組 20‧‧‧Loading module
21‧‧‧母載盤 21‧‧‧ mother carrier
211‧‧‧容置凹槽 211‧‧‧ accommodating grooves
212‧‧‧連接通口 212‧‧‧Connecting port
22‧‧‧子載盤 22‧‧‧Subcarrier
23‧‧‧固設件 23‧‧‧Fixed parts
24、44‧‧‧隔絕空間 24, 44‧‧ ‧ isolated space
25‧‧‧沉積缺口 25‧‧‧Deposition gap
30‧‧‧活動式導電模組 30‧‧‧Active Conductive Module
31‧‧‧移載單元 31‧‧‧Transfer unit
32‧‧‧第一電極 32‧‧‧First electrode
311‧‧‧護蓋 311‧‧‧ Cover
312‧‧‧隔絕件 312‧‧‧Insulation
313‧‧‧凸塊 313‧‧‧Bumps
34‧‧‧動力單元 34‧‧‧Power unit
40‧‧‧氣孔板 40‧‧‧Pneumatic plate
41‧‧‧鍍膜處理區 41‧‧‧ Coating processing area
42‧‧‧遮蓋 42‧‧‧ Cover
421‧‧‧容納凹槽 421‧‧‧ accommodating grooves
43‧‧‧第二電極 43‧‧‧second electrode
50‧‧‧活動式接地模組 50‧‧‧Active grounding module
51‧‧‧接地電極 51‧‧‧Ground electrode
52‧‧‧驅動模組 52‧‧‧Drive Module
60‧‧‧鎖固件 60‧‧‧Locker
70、71‧‧‧電源 70, 71‧‧‧ power supply
圖1係為本發明之立體圖。 圖2係為沿圖1之2-2剖面線所取之剖視圖。 圖3係為本發明之局部放大剖視圖(一)，表示移載單元於斷電位置。 圖4係為本發明之局部放大剖視圖(二)，表示移載單元於導電位置。 圖5係為本發明之使用狀態示意圖(一)，表示活動式導電模組於斷電位置。 圖6係為本發明之使用狀態示意圖(二)，表示活動式導電模組於導電位置。 圖7係為本發明之使用狀態示意圖(三)，表示第二電極為正電極並與第一電極搭配進行電漿蝕刻。Figure 1 is a perspective view of the present invention. Figure 2 is a cross-sectional view taken along line 2-2 of Figure 1. Figure 3 is a partially enlarged cross-sectional view (1) of the present invention showing the transfer unit in a power-off position. Figure 4 is a partially enlarged cross-sectional view (II) of the present invention showing the transfer unit in a conductive position. FIG. 5 is a schematic view showing the state of use of the present invention (1), showing the movable conductive module in a power-off position. Figure 6 is a schematic view of the use state of the present invention (2), showing the movable conductive module in a conductive position. Fig. 7 is a schematic view (3) showing the state of use of the present invention, showing that the second electrode is a positive electrode and is plasma-etched in combination with the first electrode.
Claims (10)
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| TW201928096A true TW201928096A (en) | 2019-07-16 |
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| TWI831290B (en) * | 2022-07-13 | 2024-02-01 | 友威科技股份有限公司 | Continuous plasma processing system with liftable and lowerable electrode |
| TWI832336B (en) * | 2022-07-18 | 2024-02-11 | 友威科技股份有限公司 | Continuous plasma processing system with high conductivity electrode |
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| TW200905006A (en) * | 2007-07-17 | 2009-02-01 | Uvat Technology Co Ltd | Rotating apparatus for electroplated objects in continuous vacuum film-plating equipment |
| TW200925311A (en) * | 2007-12-10 | 2009-06-16 | Uvat Technology Co Ltd | Continuous vacuum coater having carrying tray that provides cooling effect |
| TW200945411A (en) * | 2008-04-23 | 2009-11-01 | Uvat Technology Co Ltd | Non-contact rotation device of in-line vacuum sputtering apparatus |
| TWI394857B (en) * | 2009-06-11 | 2013-05-01 | Uvat Technology Co Ltd | Anti - coating effect of the sputtering device |
| TWM532095U (en) * | 2016-06-22 | 2016-11-11 | Linco Technology Co Ltd | Movable pallet device for production line |
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| TWI831290B (en) * | 2022-07-13 | 2024-02-01 | 友威科技股份有限公司 | Continuous plasma processing system with liftable and lowerable electrode |
| TWI832336B (en) * | 2022-07-18 | 2024-02-11 | 友威科技股份有限公司 | Continuous plasma processing system with high conductivity electrode |
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