TW201908120A - Optical film - Google Patents

Optical film Download PDF

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TW201908120A
TW201908120A TW107124761A TW107124761A TW201908120A TW 201908120 A TW201908120 A TW 201908120A TW 107124761 A TW107124761 A TW 107124761A TW 107124761 A TW107124761 A TW 107124761A TW 201908120 A TW201908120 A TW 201908120A
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film
optical film
layer
electric field
region
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TW107124761A
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Chinese (zh)
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瓦希德 莫哈瑪迪
保羅 簡森
史多元 耐田諾
戴 克豪夫 馬卡斯 安德納斯 范
柔 彼德 珍 凡
亞歷山得 尼可拉夫 茲德拉夫科夫
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荷蘭商Ａｓｍｌ荷蘭公司
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Publication of TW201908120A publication Critical patent/TW201908120A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

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  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

An optical membrane for use in or with a lithographic apparatus, the membrane comprising a first layer comprising a first material, and a second layer comprising a second material, the first layer being arranged on the second layer, wherein the first and second materials are selected such that a space charge region or depletion region is formed in the membrane, the space charge region or depletion region inducing an electric field in the membrane.

Description

光學薄膜Optical film

本發明係關於一種用於微影裝置中或搭配微影裝置使用之光學薄膜，及相關聯裝置及方法。The present invention relates to an optical film used in or used with a lithographic device, and an associated device and method.

微影裝置為經建構以將所要圖案施加至基板上之機器。微影裝置可用於例如積體電路(IC)之製造中。微影裝置可例如將圖案自圖案化器件(例如光罩)投影至提供於基板上之輻射敏感材料(抗蝕劑)層上。A lithographic apparatus is a machine configured to apply a desired pattern onto a substrate. Lithography devices can be used, for example, in the manufacture of integrated circuits (ICs). The lithographic device may, for example, project a pattern from a patterned device (such as a photomask) onto a layer of radiation-sensitive material (resist) provided on a substrate.

由微影裝置使用以將圖案投影至基板上之輻射之波長判定可形成於彼基板上之特徵之最小大小。相比於習知微影裝置(其可例如使用具有193奈米之波長之電磁輻射)，使用為具有在4奈米至20奈米範圍內之波長之電磁輻射的EUV輻射之微影裝置可用以在基板上形成較小特徵。The wavelength of the radiation used by the lithographic device to project a pattern onto a substrate determines the minimum size of a feature that can be formed on that substrate. Compared to a conventional lithographic device (which may, for example, use electromagnetic radiation having a wavelength of 193 nm), a lithographic device using EUV radiation having electromagnetic radiation having a wavelength in the range of 4 to 20 nm is available To form smaller features on the substrate.

薄膜可用於微影裝置中以保護微影裝置之一或多個組件免於污染。薄膜可充當光譜濾光器以減小或甚至消除非想要的非EUV輻射，諸如深紫外線(DUV)輻射及/或紅外線(IR輻射)，其可對微影裝置之一或多個組件造成熱損害。另外，薄膜可經配置於微影裝置中以減小或防止微影裝置之一或多個組件之污染。Thin films can be used in lithographic devices to protect one or more components of the lithographic device from contamination. The thin film can act as a spectral filter to reduce or even eliminate unwanted non-EUV radiation, such as deep ultraviolet (DUV) radiation and / or infrared (IR radiation), which can cause one or more components of the lithographic device Thermal damage. In addition, the film may be configured in a lithographic device to reduce or prevent contamination of one or more components of the lithographic device.

另外或替代地，可將薄膜提供為包含圖案化器件之圖案化器件總成之部分。薄膜可經配置以保護圖案化器件免於污染，諸如(例如)微粒污染。Additionally or alternatively, the film may be provided as part of a patterned device assembly including a patterned device. The thin film may be configured to protect the patterned device from contamination such as, for example, particulate contamination.

在使用中，薄膜可必須耐受高局部熱負荷。舉例而言，當薄膜為圖案化器件之部件時，該薄膜之至少一些部分上之溫度可約為500℃。此類溫度可對薄膜造成損害且減小薄膜之壽命。In use, the film may have to withstand high local thermal loads. For example, when the film is a part of a patterned device, the temperature on at least some portions of the film may be about 500 ° C. Such temperatures can cause damage to the film and reduce the life of the film.

根據本發明之一第一態樣，提供一種用於一微影裝置中或搭配該微影裝置使用之光學薄膜，該薄膜包含：一第一層，其包含一第一材料，及一第二層，其包含一第二材料，該第一層配置於該第二層上，其中該第一材料及該第二材料經選擇使得一空間電荷區或空乏區形成於該薄膜中，該空間電荷區或空乏區在該薄膜中誘發一電場。該誘發之電場可造成可例如在運用輻射輻照該光學薄膜期間所產生的電荷載流子之一分離及/或分散。此可減小在薄膜之輻照期間之光學薄膜(例如其一或多個部分)之局部加熱。所產生之電荷載流子之分散及/或分離可允許作用於該薄膜之熱負荷遍及該光學薄膜之區域(例如增大之區域)而散佈。According to a first aspect of the present invention, an optical film for use in or with a lithographic apparatus is provided. The film includes: a first layer including a first material, and a second A layer comprising a second material, the first layer being disposed on the second layer, wherein the first material and the second material are selected such that a space charge region or an empty region is formed in the film, and the space charge The regions or empty regions induce an electric field in the film. The induced electric field may cause separation and / or dispersion of one of the charge carriers that may be generated, for example, during irradiation of the optical film with radiation. This can reduce localized heating of the optical film (eg, one or more portions thereof) during the irradiation of the film. The dispersal and / or separation of the generated charge carriers may allow the thermal load acting on the film to spread throughout a region (eg, an enlarged region) of the optical film.

該第一材料及該第二材料可經選擇使得該空間電荷區或空乏部延伸至全部該薄膜之一部分中。The first material and the second material may be selected such that the space charge region or the empty portion extends into a portion of the entire film.

該等第一材料及該第二材料可基於該第一材料及/或該第二材料之一或多個屬性予以選擇。The first material and the second material may be selected based on one or more attributes of the first material and / or the second material.

該電場可在垂直或大體上垂直於該第一層及/或該第二層之一方向上延伸。The electric field may extend in a direction that is perpendicular or substantially perpendicular to one of the first layer and / or the second layer.

該第一材料及該第二材料可經選擇使得由該空間電荷區或空乏區誘發之該電場可造成該等所產生之電荷載流子之一分離。該等所產生之電荷載流子之分離可減小該等所產生之電荷載流子複合之機率。此可減小例如在薄膜之輻照期間薄膜之局部加熱。The first material and the second material may be selected such that the electric field induced by the space charge region or the empty region may cause separation of one of the generated charge carriers. The separation of the generated charge carriers can reduce the probability of recombination of the generated charge carriers. This can reduce local heating of the film during, for example, irradiation of the film.

該第一材料及該第二材料可經選擇使得由該空間電荷區或空乏區誘發之該電場可造成該等所產生之電荷載流子累積在該空間電荷區或空乏區之對置側上或附近。The first material and the second material may be selected such that the electric field induced by the space charge region or the empty region may cause the generated charge carriers to accumulate on opposite sides of the space charge region or the empty region. Or nearby.

該等所產生之電荷載流子之該分離及/或累積可誘發另一電場。This separation and / or accumulation of the generated charge carriers can induce another electric field.

該另一電場可在平行或大體上平行於該第一層及/或該第二層之一方向上延伸。The other electric field may extend in a direction parallel or substantially parallel to one of the first layer and / or the second layer.

該另一電場可造成該等所產生之電荷載流子例如自輻照之該薄膜之一部分或區向外及/或遠離該部分或區移動。The other electric field may cause the generated charge carriers to move outward and / or away from a portion or region of the film irradiated, for example.

該另一電場可造成該等所產生之電荷載流子例如朝向該薄膜之一周邊或周邊區域移動。The other electric field may cause the generated charge carriers to move, for example, toward a periphery or a peripheral region of the film.

該另一電場可使得該等所產生之電荷載流子可以可高於一輻射光束橫越該薄膜移動之一速度或速率的一速度或速率移動。The other electric field may cause the generated charge carriers to move at a speed or rate that is higher than a speed or rate at which a radiation beam moves across the film.

該第一材料及該第二材料中之至少一者可包含一半導體材料。此可允許例如在該第一層配置於該第二層上時形成一空間電荷區或空乏區。At least one of the first material and the second material may include a semiconductor material. This may allow, for example, a space charge region or an empty region to be formed when the first layer is disposed on the second layer.

該第一材料及該第二材料中之至少另一者可包含一半導體材料及/或一金屬。此可允許形成一pn接面或一肖特基(Schottky)接面。At least one of the first material and the second material may include a semiconductor material and / or a metal. This may allow a pn junction or a Schottky junction to be formed.

該第一材料及該第二材料中之至少一者可包含硼。At least one of the first material and the second material may include boron.

該第一材料及該第二材料中之至少另一者包含結晶矽、多晶矽、碳化矽、氮化矽、鍺及石墨烯中之至少一者。舉例而言，該第一材料可包含硼且該第二材料可包含矽，以供形成硼-矽接面。該硼-矽接面可提供該第一層與該第二層之間的幾乎無損界面或界面區。此繼而可提供該第一層與該第二層之間的該界面或界面區處或附近之增大之導電性。At least one of the first material and the second material includes at least one of crystalline silicon, polycrystalline silicon, silicon carbide, silicon nitride, germanium, and graphene. For example, the first material may include boron and the second material may include silicon for forming a boron-silicon interface. The boron-silicon interface can provide a nearly non-destructive interface or interface region between the first layer and the second layer. This in turn may provide increased conductivity at or near the interface or interface region between the first layer and the second layer.

該第一材料可包含一第一半導體材料。該第二材料可包含一第二半導體材料。該第一半導體材料與該第二半導體材料可相同或不同。The first material may include a first semiconductor material. The second material may include a second semiconductor material. The first semiconductor material and the second semiconductor material may be the same or different.

該第一材料及該第二材料中之至少一者可經負摻雜。該第一材料及該第二材料中之至少另一者可經正摻雜。At least one of the first material and the second material may be negatively doped. At least one of the first material and the second material may be positively doped.

該薄膜可包含一電極。該電極可經組態以允許將一電壓施加至該薄膜。該電壓可在該光學薄膜中誘發又一電場，諸如(例如)一外部電場。該電壓可經選擇使得將電壓施加至光學薄膜會導致空間電荷區或空乏區之寬度增大。The film may include an electrode. The electrode can be configured to allow a voltage to be applied to the film. The voltage may induce a further electric field in the optical film, such as, for example, an external electric field. The voltage can be selected such that applying a voltage to the optical film will result in an increase in the width of the space charge region or the empty region.

該電極可經配置於該薄膜上，例如使得該電壓可誘發一又一電場。該又一電場可在垂直或大體上垂直於該第一層及/或該第二層之一方向上延伸。The electrode can be configured on the film, for example, so that the voltage can induce one electric field after another. The further electric field may extend in a direction perpendicular or substantially perpendicular to one of the first layer and / or the second layer.

該薄膜可包含一第三層。該第三層可包含一第三材料。The film may include a third layer. The third layer may include a third material.

該第三材料可包含一金屬，諸如鋯、鉬及/或釕。The third material may include a metal, such as zirconium, molybdenum, and / or ruthenium.

該第一材料及該第二材料中之至少一者可包含一螢光摻雜劑。該螢光摻雜劑可增大自該光學薄膜之輻射發射。該螢光摻雜劑可充當一散熱片及/或減小該光學薄膜之局部加熱。At least one of the first material and the second material may include a fluorescent dopant. The fluorescent dopant can increase radiation emission from the optical film. The fluorescent dopant can act as a heat sink and / or reduce local heating of the optical film.

根據本發明之一第二態樣，提供一種製造用於一微影裝置中或搭配該微影裝置使用之一光學薄膜之方法，該方法包含：形成包含一第一材料之一第一層，及形成或提供包含一第二材料之一第二層，該第一層形成於該第二層上；其中該第一材料及該第二材料經選擇使得一空間電荷區或空乏區形成於該薄膜中，該空間電荷區或空乏區在該薄膜中誘發一電場。該光學薄膜可包含該第一態樣中所界定之特徵中的任一者。According to a second aspect of the present invention, a method for manufacturing an optical film for use in or with a lithographic device is provided. The method includes: forming a first layer including a first material, And forming or providing a second layer including a second material, the first layer being formed on the second layer; wherein the first material and the second material are selected such that a space charge region or an empty region is formed in the In the film, the space charge region or the empty region induces an electric field in the film. The optical film may include any one of the features defined in the first aspect.

根據本發明之一第三態樣，提供一種用於一微影裝置中或搭配該微影裝置使用之光學薄膜，該薄膜包含一半導體材料，該半導體材料包含一摻雜材料，其中該摻雜材料之一濃度經選擇使得在該薄膜中誘發一電場。藉由選擇摻雜材料之濃度使得在半導體材料中誘發電場，可減小薄膜之薄層電阻。薄膜之薄層電阻減小可導致所產生之電荷載流子之行進距離較長或增大。此可允許自運用輻射輻照的薄膜之至少一部分較快速移除所產生之電荷載流子，及/或可減小光學薄膜之一或多個部分之局部加熱。所產生之電荷載流子之增大之行進距離另外可允許及/或促進自薄膜移除所產生之電荷載流子的至少一部分。According to a third aspect of the present invention, there is provided an optical film for use in or in conjunction with a lithographic device, the film including a semiconductor material, the semiconductor material including a doping material, wherein the doping One concentration of the material is selected such that an electric field is induced in the film. By selecting the concentration of the doping material to induce an electric field in the semiconductor material, the sheet resistance of the film can be reduced. A decrease in the sheet resistance of the thin film can result in a longer or increased travel distance of the generated charge carriers. This may allow for faster removal of generated charge carriers from at least a portion of the film irradiated with radiation, and / or may reduce local heating of one or more portions of the optical film. The increased travel distance of the generated charge carriers may additionally allow and / or facilitate the removal of at least a portion of the charge carriers generated from the film.

該摻雜材料之該濃度在該半導體材料中可並非均一的。該摻雜材料之該濃度可界定該半導體材料中之一摻雜梯度。The concentration of the doping material may not be uniform in the semiconductor material. The concentration of the doping material may define a doping gradient in the semiconductor material.

該薄膜之一第一部分或側可包含一第一濃度之該摻雜材料。該薄膜之一第二部分或側可包含一第二濃度之該摻雜材料。該摻雜材料之該第一濃度可高於該摻雜材料之該第二濃度。A first portion or side of the thin film may include a first concentration of the doping material. A second portion or side of the film may include a second concentration of the doping material. The first concentration of the doping material may be higher than the second concentration of the doping material.

該摻雜材料之該濃度可經選擇為在該半導體材料中在1022 cm- 3 與1014 cm- 3 之間變化。The concentration of the doping material may be selected to vary between 10 22 cm - 3 and 10 14 cm - 3 in the semiconductor material.

該摻雜材料之該濃度可經選擇使得該誘發之電場約為或大於107 V/m。The concentration of the doping material may be selected such that the induced electric field is about or greater than 10 7 V / m.

該摻雜材料之該濃度可經選擇使得該誘發之電場造成在運用輻射來輻照該薄膜期間所產生的電荷載流子之一分離。The concentration of the doped material may be selected such that the induced electric field causes separation of one of the charge carriers generated during the irradiation of the film with radiation.

該摻雜材料之該濃度可經選擇使得該誘發之電場造成該等所產生之電荷載流子累積在薄膜之對置側上或附近。The concentration of the doping material may be selected such that the induced electric field causes the generated charge carriers to be accumulated on or near the opposite side of the film.

該等所產生之電荷載流子之該分離及/或累積可誘發另一電場。This separation and / or accumulation of the generated charge carriers can induce another electric field.

該半導體材料可包含結晶矽、多晶矽、碳化矽、氮化矽、石墨烯及三五族化合物半導體中之至少一者中之至少一者。The semiconductor material may include at least one of at least one of crystalline silicon, polycrystalline silicon, silicon carbide, silicon nitride, graphene, and a group three or five compound semiconductor.

該摻雜材料可包含硼、砷、銻及磷中之至少一者。The doping material may include at least one of boron, arsenic, antimony, and phosphorus.

根據本發明之一第四態樣，提供一種製造用於一微影裝置中或搭配該微影裝置使用之一光學薄膜之方法，該方法包含：形成或提供一半導體材料；及運用一摻雜材料摻雜該半導體材料，其中該摻雜材料之一濃度經選擇使得在該薄膜中誘發一電場。該光學薄膜可包含該第三態樣中所界定之特徵中的任一者。According to a fourth aspect of the present invention, there is provided a method of manufacturing an optical film for use in or in conjunction with a lithographic device, the method comprising: forming or providing a semiconductor material; and using a doping The material is doped with the semiconductor material, wherein a concentration of the doped material is selected such that an electric field is induced in the film. The optical film may include any one of the features defined in the third aspect.

根據本發明之一第五態樣，提供一種用於減小一光學薄膜之加熱之系統，該系統包含：根據該第一及/或第三態樣之一光學薄膜，其中該系統經組態以用於自該薄膜移除電荷載流子，該等電荷載流子係在例如運用輻射(諸如(例如)EUV輻射)來輻照該薄膜期間產生。According to a fifth aspect of the present invention, there is provided a system for reducing heating of an optical film, the system comprising: an optical film according to the first and / or third aspect, wherein the system is configured For removing charge carriers from the film, the charge carriers are generated, for example, during irradiation of the film with radiation such as, for example, EUV radiation.

該系統可經組態以用於自該薄膜之一或多個周邊部分或一周邊移除該等所產生之電荷載流子。The system may be configured to remove the generated charge carriers from one or more peripheral portions or a periphery of the film.

該系統可經組態以提供用於該等所產生之電荷載流子之一槽。The system can be configured to provide a slot for the generated charge carriers.

該系統可經組態以使該薄膜短路。該薄膜之該短路可允許使該薄膜放電，諸如(例如)持續放電。換言之，可自該薄膜持續地移除該等所產生之電荷載流子。此可允許該薄膜中所產生的電荷載流子持續分散，藉此減小該薄膜(例如其一或多個部分或部件)之加熱。The system can be configured to short the film. The short circuit of the film may allow the film to be discharged, such as, for example, continuous discharge. In other words, the generated charge carriers can be continuously removed from the film. This may allow continuous dispersion of the charge carriers generated in the film, thereby reducing heating of the film (e.g., one or more parts or components thereof).

該薄膜之一第一部分或側可連接(諸如電連接)至該薄膜之一第二部分或側。可使第一側及/或第二側或部分電接地。該第一側或部分及/或該第二側或部分之該電接地可提供用於該等所產生之電荷載流子之槽。此可允許自該薄膜移除該等所產生之電荷載流子。自薄膜移除電荷載流子可防止或減小使得可在薄膜中產生熱的電荷載流子之複合。A first portion or side of the film may be connected (such as electrically connected) to a second portion or side of the film. The first side and / or the second side or part can be electrically grounded. The electrical ground of the first side or portion and / or the second side or portion may provide a slot for the generated charge carriers. This may allow the generated charge carriers to be removed from the film. Removal of charge carriers from the thin film prevents or reduces recombination of charge carriers that can generate heat in the thin film.

該薄膜之該第一部分或側可在該薄膜之一周邊處或附近連接至該薄膜之該第二部分或側。The first portion or side of the film may be connected to the second portion or side of the film at or near a periphery of the film.

該系統可包含一負載件，諸如一電阻性元件。該負載件可連接至該薄膜。The system may include a load, such as a resistive element. The load can be connected to the film.

該負載件之一電阻可基於該薄膜之至少另一屬性予以選擇。該至少另一屬性可包含該薄膜之一薄層電阻。A resistance of the load member may be selected based on at least another property of the film. The at least another attribute may include a sheet resistance of the film.

該負載件之該電阻可經選擇為匹配於(例如大體上匹配於)該薄膜之該薄層電阻。藉由選擇負載件之電阻以匹配於(例如大體上匹配於)薄層電阻，可自薄膜移除例如在運用輻射來輻照光學薄膜(例如其一或多個部件或部分)期間在薄膜中所產生的熱(或其至少一部分)。The resistance of the load member may be selected to match (eg, substantially match) the sheet resistance of the film. By selecting the resistance of the load to match (e.g., substantially match) the sheet resistance, the film can be removed from the film, for example, during application of radiation to irradiate the optical film (e.g., one or more parts or portions thereof) The heat generated (or at least a portion of it).

根據一第六態樣，提供一種供搭配一微影裝置使用之圖案化器件總成，該總成包含：一圖案化器件；及一表膜，其包含根據該第一及/或第三態樣之一光學薄膜或根據該第五態樣之用於減小一光學薄膜之加熱的一系統。According to a sixth aspect, a patterned device assembly for use with a lithographic device is provided. The assembly includes: a patterned device; and a surface film including the first and / or third states. An optical film or a system for reducing heating of an optical film according to the fifth aspect.

根據一第七態樣，提供一種微影裝置，其包含以下各者中之一或多者：一照明系統，其經組態以調節一輻射光束；一支撐結構，其經建構以支撐一圖案化器件，該圖案化器件能夠在該輻射光束之橫截面中向該輻射光束賦予一圖案以形成一經圖案化輻射光束；一基板台，其經建構以固持一基板；一投影系統，其經組態以將該經圖案化輻射光束投影至該基板上；及根據該第一及/或第三態樣之一光學薄膜，該薄膜鄰近於該基板台配置；或根據該第五態樣之用於減小一光學薄膜之加熱的一系統。According to a seventh aspect, a lithography device is provided, which includes one or more of the following: an illumination system configured to regulate a radiation beam; a support structure configured to support a pattern A patterning device capable of imparting a pattern to the radiation beam in a cross section of the radiation beam to form a patterned radiation beam; a substrate table configured to hold a substrate; a projection system which State to project the patterned radiation beam onto the substrate; and an optical film according to one of the first and / or third aspects, the film being disposed adjacent to the substrate stage; or according to the use of the fifth aspect A system for reducing the heating of an optical film.

該裝置可包含一碎屑減輕器件。該碎屑減輕器件可經組態以將一氣流導向朝向該基板。該薄膜可為該碎屑減輕器件之部件或包含於該碎屑減輕器件中。The device may include a debris mitigation device. The debris mitigation device may be configured to direct an airflow toward the substrate. The film may be part of or contained in the debris reduction device.

根據一第八態樣，提供一種方法，其包含將一經圖案化輻射光束投影至一基板上，其中該輻射光束傳遞通過根據該第一或第三態樣之一光學薄膜。According to an eighth aspect, a method is provided that includes projecting a patterned radiation beam onto a substrate, wherein the radiation beam is passed through an optical film according to the first or third aspect.

根據一第九態樣，提供一種根據該第一及/或第三態樣之光學薄膜在一微影裝置中或搭配該微影裝置的用途。According to a ninth aspect, there is provided a use of the optical film according to the first and / or third aspect in a lithographic apparatus or in combination with the lithographic apparatus.

如將對熟習此項技術者易於顯而易見，上文或下文所闡明之本發明之各種態樣及特徵可與本發明之各種其他態樣及特徵組合。As will be readily apparent to those skilled in the art, various aspects and features of the invention as set forth above or below may be combined with various other aspects and features of the invention.

圖1展示微影系統。該微影系統包含輻射源SO及微影裝置LA。輻射源SO經組態以產生極紫外線(EUV)輻射光束B。微影裝置LA包含照明系統IL、經組態以支撐圖案化器件MA (例如光罩)之支撐結構MT、投影系統PS及經組態以支撐基板W之基板台WT。照明系統IL經組態以在輻射光束B入射於圖案化器件MA上之前調節該輻射光束B。投影系統經組態以將輻射光束B (現在由光罩MA而圖案化)投影至基板W上。基板W可包括先前形成之圖案。在此種狀況下，微影裝置將經圖案化輻射光束B與先前形成於基板W上之圖案對準。Figure 1 shows the lithography system. The lithography system includes a radiation source SO and a lithography device LA. The radiation source SO is configured to generate an extreme ultraviolet (EUV) radiation beam B. The lithographic apparatus LA includes an illumination system IL, a support structure MT configured to support a patterning device MA (such as a photomask), a projection system PS, and a substrate table WT configured to support a substrate W. The illumination system IL is configured to condition the radiation beam B before it is incident on the patterned device MA. The projection system is configured to project a radiation beam B (now patterned by a mask MA) onto a substrate W. The substrate W may include a previously formed pattern. In this case, the lithographic apparatus aligns the patterned radiation beam B with a pattern previously formed on the substrate W.

輻射源SO、照明系統IL及投影系統PS可皆經建構且經配置成使得其可與外部環境隔離。處於低於大氣壓力之壓力下之氣體(例如氫氣)可提供於輻射源SO中。真空可提供於照明系統IL及/或投影系統PS中。在充分地低於大氣壓力之壓力下之少量氣體(例如氫氣)可提供於照明系統IL及/或投影系統PS中。The radiation source SO, the lighting system IL, and the projection system PS can all be constructed and configured so that they can be isolated from the external environment. A gas (eg, hydrogen) at a pressure below atmospheric pressure may be provided in the radiation source SO. Vacuum may be provided in the illumination system IL and / or the projection system PS. A small amount of gas (such as hydrogen) at a pressure sufficiently lower than atmospheric pressure may be provided in the lighting system IL and / or the projection system PS.

圖1所展示之輻射源SO屬於可被稱作雷射產生電漿(LPP)源之類型。可(例如)為CO2 雷射之雷射1經配置以經由雷射光束2而將能量沈積至自燃料發射器3提供之諸如錫(Sn)之燃料中。儘管在以下描述中提及錫，但可使用任何合適燃料。燃料可例如呈液體形式，且可例如為金屬或合金。燃料發射器3可包含一噴嘴，該噴嘴經組態以沿著朝向電漿形成區4之軌跡而導向例如呈小滴之形式的錫。雷射光束2在電漿形成區4處入射於錫上。雷射能量至錫中之沈積會在電漿形成區4處產生電漿7。在電漿之離子之去激發及複合期間自電漿7發射包括EUV輻射之輻射。The radiation source SO shown in FIG. 1 is of a type that can be referred to as a laser-generated plasma (LPP) source. Laser 1, which may be, for example, a CO 2 laser, is configured to deposit energy via a laser beam 2 into a fuel such as tin (Sn) provided from a fuel emitter 3. Although tin is mentioned in the following description, any suitable fuel may be used. The fuel may be, for example, in a liquid form, and may be, for example, a metal or an alloy. The fuel launcher 3 may include a nozzle configured to direct tin, for example in the form of droplets, along a trajectory towards the plasma-forming region 4. The laser beam 2 is incident on the tin at the plasma forming region 4. The deposition of laser energy into the tin generates plasma 7 at the plasma forming area 4. Radiation including EUV radiation is emitted from the plasma 7 during the de-excitation and recombination of the plasma's ions.

EUV輻射係由近正入射輻射收集器5 (有時更通常被稱作正入射輻射收集器)收集及聚焦。收集器5可具有經配置以反射EUV輻射(例如具有諸如13.5奈米之所要波長之EVU輻射)之多層結構。收集器5可具有橢圓形組態，其具有兩個橢圓焦點。第一焦點可處於電漿形成區4處，且第二焦點可處於中間焦點6處，如下文所論述。EUV radiation is collected and focused by a near normal incidence radiation collector 5 (sometimes more commonly referred to as a normal incidence radiation collector). The collector 5 may have a multilayer structure configured to reflect EUV radiation (e.g., EUV radiation having a desired wavelength such as 13.5 nm). The collector 5 may have an elliptical configuration with two elliptical focal points. The first focus may be at the plasma forming area 4 and the second focus may be at the intermediate focus 6 as discussed below.

雷射1可遠離輻射源SO。在此種狀況下，雷射光束2可憑藉包含例如合適導向鏡及/或光束擴展器及/或其他光學件之光束遞送系統(圖中未繪示)而自雷射1傳遞至輻射源SO。雷射1及輻射源SO可一起被認為係輻射系統。Laser 1 can be kept away from the radiation source SO. In this case, the laser beam 2 can be transmitted from the laser 1 to the radiation source SO by means of a beam delivery system (not shown) comprising, for example, a suitable guide mirror and / or a beam expander and / or other optics . Laser 1 and the radiation source SO can be considered together as a radiation system.

由收集器5反射之輻射形成輻射光束B。輻射光束B聚焦於點6處以形成電漿形成區4之影像，該影像充當用於照明系統IL之虛擬輻射源。輻射光束B聚焦於之點6可被稱作中間焦點。輻射源SO經配置使得中間焦點6位於輻射源之圍封結構9中之開口8處或附近。The radiation reflected by the collector 5 forms a radiation beam B. The radiation beam B is focused at point 6 to form an image of the plasma-forming region 4, which image serves as a virtual radiation source for the illumination system IL. The point 6 at which the radiation beam B is focused may be referred to as an intermediate focus. The radiation source SO is configured such that the intermediate focus 6 is located at or near the opening 8 in the enclosure 9 of the radiation source.

輻射光束B自輻射源SO傳遞至照明系統IL中，該照明系統經組態以調節輻射光束。照明系統IL可包括琢面化場鏡面器件10及琢面化光瞳鏡面器件11。琢面化場鏡面器件10及琢面化光瞳鏡面器件11一起向輻射光束B提供所要橫截面形狀及所要角強度分佈。輻射光束B自照明系統IL傳遞且入射於由支撐結構MT固持之圖案化器件MA上。圖案化器件MA反射及圖案化輻射光束B。除了琢面化場鏡面器件10及琢面化光瞳鏡面器件11以外或代替琢面化場鏡面器件10及琢面化光瞳鏡面器件11，照明系統IL亦可包括其他鏡面或器件。The radiation beam B is passed from a radiation source SO to an illumination system IL, which is configured to regulate the radiation beam. The illumination system IL may include a faceted field mirror device 10 and a faceted pupil mirror device 11. The faceted field mirror device 10 and the faceted pupil mirror device 11 together provide the radiation beam B with a desired cross-sectional shape and a desired angular intensity distribution. The radiation beam B is transmitted from the illumination system IL and incident on the patterned device MA held by the support structure MT. The patterning device MA reflects and patterns the radiation beam B. In addition to or instead of the faceted field mirror device 10 and the faceted pupil mirror device 11, the illumination system IL may also include other mirrors or devices.

在自圖案化器件MA反射之後，經圖案化輻射光束B進入投影系統PS。投影系統包含複數個鏡面，該複數個鏡面經組態以將輻射光束B投影至由基板台WT固持之基板W上。投影系統PS可將縮減因數應用於輻射光束，從而形成特徵小於圖案化器件MA上之對應特徵的影像。舉例而言，可應用為4之縮減因數。儘管投影系統PS在圖1中具有兩個鏡面，但投影系統可包括任何數目個鏡面(例如六個鏡面)。After being reflected from the patterning device MA, the patterned radiation beam B enters the projection system PS. The projection system includes a plurality of mirror surfaces configured to project a radiation beam B onto a substrate W held by a substrate table WT. The projection system PS can apply a reduction factor to the radiation beam to form an image with features smaller than corresponding features on the patterned device MA. For example, a reduction factor of 4 can be applied. Although the projection system PS has two mirrors in FIG. 1, the projection system may include any number of mirrors (e.g., six mirrors).

圖1示意性地描繪根據本發明之一實施例的用於微影裝置中或搭配微影裝置使用的光學薄膜16。該光學薄膜可為供搭配微影裝置使用的圖案化器件總成PA之部分或包含於該圖案化器件總成PA中。圖案化器件總成PA可包含圖1中所描繪之圖案化器件MA及表膜PL (圖1中由虛線所指示)。表膜PL可為光學薄膜16或包含光學薄膜16。表膜PL可經配置以保護圖案化器件MA免於污染，諸如(例如)微粒污染，及/或損害。舉例而言，表膜PL可經配置以便在圖案化器件MA上方延伸或覆蓋圖案化器件MA。然而，應瞭解，本文中所描述之光學薄膜不限於為圖案化總成之部分或包含於圖案化總成中。舉例而言，如下文將描述，在其他實施例中，光學薄膜可經提供為碎屑減輕系統之部分。FIG. 1 schematically depicts an optical film 16 used in or used with a lithographic apparatus according to an embodiment of the present invention. The optical film may be part of the patterned device assembly PA for use with a lithographic device or included in the patterned device assembly PA. The patterned device assembly PA may include the patterned device MA and the surface film PL depicted in FIG. 1 (indicated by a dotted line in FIG. 1). The cover film PL may be or include the optical film 16. The cover film PL may be configured to protect the patterned device MA from contamination such as, for example, particulate contamination, and / or damage. For example, the surface film PL may be configured so as to extend over or cover the patterned device MA. It should be understood, however, that the optical films described herein are not limited to being part of or being included in a patterned assembly. For example, as will be described below, in other embodiments, the optical film may be provided as part of a debris mitigation system.

圖2示意性地描繪光學薄膜16。該光學薄膜16可以濾光器、光譜濾光器或光譜純度濾光器之形式提供。光學薄膜16可經組態以透射EUV輻射及/或對EUV輻射透明，例如大體上透明。光學薄膜16可經組態以濾光(例如減小或大體上消除)深紫外線(DUV)輻射及/或紅外線(IR)輻射。光學薄膜16可為或包含膜，諸如薄膜，或可撓性薄片，例如薄可撓性薄片。光學薄膜16可包含約20奈米至80奈米之厚度。FIG. 2 schematically depicts the optical film 16. The optical film 16 may be provided in the form of a filter, a spectral filter, or a spectral purity filter. The optical film 16 may be configured to transmit and / or be transparent to EUV radiation, such as being substantially transparent. The optical film 16 may be configured to filter (eg, reduce or substantially eliminate) deep ultraviolet (DUV) radiation and / or infrared (IR) radiation. The optical film 16 may be or include a film, such as a film, or a flexible sheet, such as a thin flexible sheet. The optical film 16 may include a thickness of about 20 nm to 80 nm.

光學薄膜16包含包含第一材料之第一層18及包含第二材料之第二層20。第一層18配置於第二層20上。第一材料及第二材料經選擇使得空間電荷區或空乏區22形成於薄膜16中。空間電荷區或空乏區22在光學薄膜16中誘發電場E。誘發之電場可造成可在運用輻射光束B輻照光學薄膜期間產生的電荷載流子之分離及/或分散。此可減小光學薄膜16之一或多個部分之局部加熱。所產生之電荷載流子之分散及/或分離可允許作用於光學薄膜16之熱負荷遍及光學薄膜16之增大之區域散佈。此可減小在運用輻射光束B進行輻照期間光學薄膜16之一或多個部分之加熱。The optical film 16 includes a first layer 18 including a first material and a second layer 20 including a second material. The first layer 18 is disposed on the second layer 20. The first material and the second material are selected such that a space charge region or a depletion region 22 is formed in the thin film 16. The space charge region or empty region 22 induces an electric field E in the optical film 16. The induced electric field may cause separation and / or dispersion of charge carriers that may be generated during the irradiation of the optical film with the radiation beam B. This can reduce local heating of one or more portions of the optical film 16. The dispersion and / or separation of the generated charge carriers may allow the thermal load acting on the optical film 16 to spread throughout the enlarged area of the optical film 16. This can reduce heating of one or more portions of the optical film 16 during irradiation with the radiation beam B.

術語「所產生之電荷載流子」可被認為涵蓋光生電荷載流子，諸如(例如)在光學薄膜16對一些輻射光束B之吸收期間產生的電子-電洞對。The term "generated charge carriers" can be considered to encompass photo-generated charge carriers such as, for example, electron-hole pairs generated during the absorption of some radiation beams B by the optical film 16.

術語「空間電荷區或空乏區」可被理解為諸如電子及/或電洞之可移動電荷載流子已從中擴散掉之區。繼續存在之任何正及/或負淨電荷在第一層18與第二層20之間的界面23處或附近誘發電場E。正及/或負淨電荷可包括離子化雜質，諸如離子化供體及/或受體，且在圖2中係由「+」及「-」指示。術語「界面」可被認為涵蓋界面區。The term "space charge region or empty region" can be understood as a region from which mobile charge carriers, such as electrons and / or holes, have diffused away. Any positive and / or negative net charge that continues to induce an electric field E at or near the interface 23 between the first layer 18 and the second layer 20. Positive and / or negative net charges may include ionized impurities, such as ionized donors and / or acceptors, and are indicated by "+" and "-" in FIG. 2. The term "interface" can be considered to cover the interface area.

第一層18之第一材料及第二層20之第二材料分別可基於第一材料及/或第二材料之一或多個屬性來選擇。第一材料及/或第二材料之一或多個屬性可包含材料類型、缺陷濃度、摻雜劑類型，及/或第一材料及/或第二材料之摻雜濃度。該一或多個屬性可包含第一材料及/或第二材料之一或多個光學屬性，諸如(例如)第一材料及/或第二材料之透射係數、反射係數及/或吸收係數。該一或多個屬性可包含第一材料及/或第二材料之一或多個物理屬性，諸如(例如)輻射硬度及/或照明穩定性。The first material of the first layer 18 and the second material of the second layer 20 may be selected based on one or more attributes of the first material and / or the second material, respectively. One or more attributes of the first material and / or the second material may include a material type, a defect concentration, a dopant type, and / or a doping concentration of the first material and / or the second material. The one or more attributes may include one or more optical attributes of the first material and / or the second material, such as, for example, a transmission coefficient, a reflection coefficient, and / or an absorption coefficient of the first material and / or the second material. The one or more attributes may include one or more physical attributes of the first material and / or the second material, such as, for example, radiation hardness and / or lighting stability.

第一材料及第二材料可經選擇使得空間電荷區或空乏區22延伸至光學薄膜16之至少一部分或全部中。舉例而言，第一材料及第二材料可經選擇使得空間電荷區或空乏區22至少自第一層18與第二層20之間的界面23延伸至第一層18及第二層20 (例如第一材料及第二材料)中之至少一者或兩者中。第一材料及第二材料可經選擇使得空間電荷區或空乏區22至第二層20 (例如第二材料)中之範圍大於空間電荷區或空乏區22至第一層18 (例如第一材料)中之範圍。替代地，第一材料及第二材料可經選擇使得空間電荷區或空乏區22至第二層20 (例如第二材料)中之範圍等於(例如大體上等於)或小於空間電荷區或空乏區22至第一層18 (例如第一材料)中之範圍。The first material and the second material may be selected such that the space charge region or the empty region 22 extends into at least a part or all of the optical film 16. For example, the first material and the second material may be selected such that the space charge region or empty region 22 extends at least from the interface 23 between the first layer 18 and the second layer 20 to the first layer 18 and the second layer 20 ( For example, at least one or both of the first material and the second material). The first material and the second material may be selected such that the range in the space charge region or empty region 22 to the second layer 20 (e.g., the second material) is greater than the space charge region or empty region 22 to the first layer 18 (e.g., the first material ). Alternatively, the first material and the second material may be selected such that the range in the space charge region or empty region 22 to the second layer 20 (e.g., the second material) is equal to (e.g., substantially equal to) or less than the space charge region or empty region 22 to the first layer 18 (eg, the first material).

在圖2中所描繪之實施例中，第一層18之第一材料包含第一半導體材料且第二層20之第二材料包含第二半導體材料。第一半導體材料與第二半導體材料可相同或不同。第一半導體材料及第二半導體材料中之至少一者可經負摻雜且第一半導體材料及第二半導體材料中之至少另一者可經正摻雜。在圖2中所描繪之實施例中，第一層18及第二層20可被認為形成pn接面。空間電荷區或空乏區22延伸至第一層18及第二層20兩者中。然而，應瞭解，本文中所描述之第一層及第二層不限於形成pn接面。舉例而言，在其他實施例中，第一層之第一材料及第二層之第二材料可經選擇使得第一層與第二層形成肖特基接面或硼-矽接面。如下文將描述。在此類實施例中，空間電荷區或空乏區可被認為僅延伸至第一層及第二層中之一者中。In the embodiment depicted in FIG. 2, the first material of the first layer 18 includes a first semiconductor material and the second material of the second layer 20 includes a second semiconductor material. The first semiconductor material and the second semiconductor material may be the same or different. At least one of the first semiconductor material and the second semiconductor material may be negatively doped and at least the other of the first semiconductor material and the second semiconductor material may be positively doped. In the embodiment depicted in FIG. 2, the first layer 18 and the second layer 20 may be considered to form a pn junction. The space charge region or empty region 22 extends into both the first layer 18 and the second layer 20. However, it should be understood that the first layer and the second layer described herein are not limited to forming a pn junction. For example, in other embodiments, the first material of the first layer and the second material of the second layer may be selected such that the first layer and the second layer form a Schottky interface or a boron-silicon interface. As will be described below. In such embodiments, the space charge region or empty region may be considered to extend only into one of the first layer and the second layer.

圖3A示意性地描繪在運用輻射光束B進行輻照之前的圖2之光學薄膜16。在圖3A中所描繪之實施例中，空間電荷區或空乏區22被認為延伸至全部光學薄膜16中。然而，應瞭解，在其他實施例中，空間電荷可僅延伸至光學薄膜之一部分中。圖3B描繪作用於光學薄膜16之一或多個散熱片及一或多個熱源取決於在光學薄膜16上之位置(例如在y方向上之位置)之貢獻的曲線圖。在圖3B中可看到，在輻照光學薄膜16之前，作用於光學薄膜16之一或多個散熱片之貢獻30大體上恆定且不存在作用於光學薄膜16之熱源。FIG. 3A schematically depicts the optical film 16 of FIG. 2 before irradiation with the radiation beam B. FIG. In the embodiment depicted in FIG. 3A, the space charge region or empty region 22 is considered to extend into the entire optical film 16. It should be understood, however, that in other embodiments, the space charge may extend into only a portion of the optical film. FIG. 3B depicts a graph of the contribution of one or more heat sinks and one or more heat sources acting on the optical film 16 depending on the position on the optical film 16 (eg, the position in the y-direction). It can be seen in FIG. 3B that before the optical film 16 is irradiated, the contribution 30 acting on one or more heat sinks of the optical film 16 is substantially constant and there is no heat source acting on the optical film 16.

術語「熱源」可被認為涵蓋在光學薄膜上或中產生熱之一或多個機構。下文將描述在光學薄膜上或中產生熱之一或多個機構。術語「一或多個熱源」可與術語「熱源」可互換地使用。The term "heat source" may be considered to encompass one or more mechanisms that generate heat on or in the optical film. One or more mechanisms that generate heat on or in the optical film will be described below. The term "one or more heat sources" is used interchangeably with the term "heat source".

術語「散熱片」可被認為涵蓋將熱自光學薄膜例如轉移至光學薄膜之周圍環境的一或多個機構。下文將描述將熱自光學薄膜轉移的一或多個機構。術語「一或多個散熱片」可與術語「散熱片」可互換地使用。The term "heat sink" may be considered to encompass one or more mechanisms that transfer heat from the optical film, for example, to the surroundings of the optical film. One or more mechanisms that transfer heat from the optical film will be described below. The term "one or more heat sinks" is used interchangeably with the term "heat sink".

圖4A示意性地描繪在輻照期間之光學薄膜16。圖4B相似於圖3B。在輻照光學薄膜16期間，產生複數個電荷載流子24。換言之，歸因於光學薄膜16之第一材料及第二材料吸收輻射光束B之一些輻射而產生複數個電子-電洞對24。該複數個電子-電洞對24產生於光學薄膜之由輻射光束B輻照的部分或區中。光學薄膜16之由輻射光束B輻照的部分或區亦可被稱作照明體積26。運用輻射光束B輻照光學薄膜16會使得在光學薄膜16中產生熱。換言之，運用輻射光束B輻照光學薄膜16可被認為一或多個熱源中之一者。FIG. 4A schematically depicts the optical film 16 during irradiation. Figure 4B is similar to Figure 3B. During the irradiation of the optical film 16, a plurality of charge carriers 24 are generated. In other words, due to the first material and the second material of the optical film 16 absorbing some radiation of the radiation beam B, a plurality of electron-hole pairs 24 are generated. The plurality of electron-hole pairs 24 are generated in a portion or region of the optical film irradiated by the radiation beam B. The portion or area of the optical film 16 irradiated by the radiation beam B may also be referred to as the illumination volume 26. Irradiating the optical film 16 with the radiation beam B causes heat to be generated in the optical film 16. In other words, irradiating the optical film 16 with the radiation beam B may be considered as one of one or more heat sources.

在光學薄膜16中或上產生熱之其他熱源可包括以下各者中之一或多者：所產生電子-電洞對之複合，例如所產生電子-電洞對之輻射及/或非輻射複合；及電子-電洞對之熱化。電子-電洞對之熱化可包含所產生電子及電洞例如在一或多個聲子之發射(例如晶格振動)下分別朝向導電帶及價帶之最低位準鬆弛。在光學薄膜16中或上產生熱之其他熱源可進一步包括可歸因於流動通過光學薄膜16之電流的焦耳加熱或焦耳效應。電流可由移動通過光學薄膜16的所產生之電子-電洞對引起。其他熱源可進一步包括可歸因於流動通過兩個不同導體之間的接面之電流的帕耳帖(Peltier)效應。Other heat sources that generate heat in or on the optical film 16 may include one or more of the following: the electron-hole pair recombination produced, such as the radiative and / or non-radiation recombination of the electron-hole pair produced And heating of electron-hole pairs. Heating of an electron-hole pair may include relaxation of the generated electrons and holes toward the lowest level of the conductive and valence bands, respectively, under the emission of one or more phonons (eg, lattice vibrations). Other heat sources that generate heat in or on the optical film 16 may further include Joule heating or Joule effects attributable to the current flowing through the optical film 16. The current can be caused by the resulting electron-hole pairs moving through the optical film 16. Other heat sources may further include a Peltier effect attributable to a current flowing through a junction between two different conductors.

可將熱自光學薄膜16轉移的散熱片可包括可歸因於流動通過光學薄膜16之電流的湯普森(Thompson)效應。可將熱自光學薄膜16轉移的另一散熱片可包括對流，例如在光學薄膜與光學薄膜16之環境之間進行熱轉移，諸如(例如)可存在於光學薄膜16處或附近的氣流。A heat sink that can transfer heat from the optical film 16 may include a Thompson effect attributable to the current flowing through the optical film 16. Another heat sink that can transfer heat from the optical film 16 may include convection, such as heat transfer between the optical film and the environment of the optical film 16, such as, for example, an airflow that may be present at or near the optical film 16.

圖4B描繪在光學薄膜16之照明體積26中與一或多個散熱片之貢獻30相比，一或多個熱源對光學薄膜16之加熱之貢獻28。自圖4B可看到，在照明體積26中，一或多個熱源之貢獻28大於一或多個散熱片之貢獻30。熱源之貢獻28與散熱片之貢獻30之間的差在圖4B中以元件符號D1指示。熱源之貢獻28與散熱片之貢獻30之間的此差D1可造成在照明體積26中光學薄膜16之局部加熱。舉例而言，當光學薄膜16用作圖案化器件MA之表膜時，在中間焦點6處量測的輻射光束B之200W之功率可造成光學薄膜16之約為500℃之溫度。替代地或另外，在一些實施例中，光學薄膜16為如下文將描述之碎屑減輕器件15之部分。在此類實施例中，在中間焦點6處量測的輻射光束B之200W之功率可造成光學薄膜之約為100℃之溫度。如以上所描述，光學薄膜16之加熱可減小光學薄膜16之壽命及/或對光學薄膜16造成損害。自圖4B可看到，在照明體積26之外部，散熱片比在照明體積26之內部更佔優勢。換言之，在照明體積26之外部，將熱自光學薄膜16例如轉移至光學薄膜16之周圍環境。FIG. 4B depicts the contribution 28 of one or more heat sources to the heating of the optical film 16 in the illumination volume 26 of the optical film 16 compared to the contribution 30 of one or more heat sinks. As can be seen from FIG. 4B, in the lighting volume 26, the contribution 28 of one or more heat sources is greater than the contribution 30 of one or more heat sinks. The difference between the contribution 28 of the heat source and the contribution 30 of the heat sink is indicated by the component symbol D1 in FIG. 4B. This difference D1 between the contribution 28 of the heat source and the contribution 30 of the heat sink can cause local heating of the optical film 16 in the illumination volume 26. For example, when the optical film 16 is used as the surface film of the patterning device MA, the power of 200W of the radiation beam B measured at the intermediate focal point 6 may cause the temperature of the optical film 16 to be about 500 ° C. Alternatively or in addition, in some embodiments, the optical film 16 is part of a debris mitigation device 15 as will be described below. In such embodiments, the power of 200 W of the radiation beam B measured at the intermediate focal point 6 may result in a temperature of the optical film of about 100 ° C. As described above, the heating of the optical film 16 may reduce the lifetime of the optical film 16 and / or cause damage to the optical film 16. As can be seen from FIG. 4B, outside the lighting volume 26, the heat sink is more dominant than inside the lighting volume 26. In other words, outside the illumination volume 26, heat is transferred from the optical film 16, for example, to the surroundings of the optical film 16.

圖5A示意性地描繪在輻照期間之光學薄膜16。圖4B相似於圖3B及圖4B。如上文所論述，第一材料及第二材料經選擇使得空間電荷區或空乏區22形成於薄膜16中。空間電荷區或空乏區22在光學薄膜16中誘發電場E。第一層18及第二層20之第一材料及第二材料分別可經選擇使得由空間電荷區或空乏區22誘發之電場E足以造成所產生之電荷載流子24分離。舉例而言，第一層18及第二層20之第一材料及第二材料分別可經選擇使得由空間電荷區22誘發之電場E約為107 V/m。應瞭解，誘發之電場愈大，所產生之電荷載流子24之分離可能愈高效，例如愈大及/或愈快速。舉例而言，誘發之電場之增大(例如高於107 V/m)可向所產生之電荷載流子24提供增大之電位障壁。此可提供電荷載流子24之有效分離及/或可減小可克服電位障壁之電荷載流子之數目。所產生電荷載流子24之分離可減小所產生之電荷載流子24複合之機率。此可減小照明體積26中光學薄膜16之局部加熱。另外，誘發之電場E之增大(例如高於107 V/m)可導致增大之量的所產生電荷載流子分離。FIG. 5A schematically depicts the optical film 16 during irradiation. FIG. 4B is similar to FIG. 3B and FIG. 4B. As discussed above, the first material and the second material are selected such that a space charge region or empty region 22 is formed in the thin film 16. The space charge region or empty region 22 induces an electric field E in the optical film 16. The first material and the second material of the first layer 18 and the second layer 20 may be selected such that the electric field E induced by the space charge region or the empty region 22 is sufficient to cause separation of the generated charge carriers 24. For example, the first material and the second material of the first layer 18 and the second layer 20 may be selected such that the electric field E induced by the space charge region 22 is about 10 7 V / m. It should be understood that the larger the induced electric field, the more efficient the separation of the generated charge carriers 24 may be, such as larger and / or faster. For example, an increase in the induced electric field (eg, higher than 10 7 V / m) may provide an increased potential barrier to the generated charge carriers 24. This can provide effective separation of the charge carriers 24 and / or can reduce the number of charge carriers that can overcome the potential barrier. The separation of the generated charge carriers 24 can reduce the probability that the generated charge carriers 24 recombine. This can reduce the local heating of the optical film 16 in the illumination volume 26. In addition, an increase in the induced electric field E (for example, higher than 10 7 V / m) can lead to an increased amount of generated charge carrier separation.

電場E可被認為在與第一層18及/或第二層20垂直(例如大體上垂直)之方向上延伸。電場E可被認為係內建式電場或豎直內建式電場。第一層18與第二層20之間的界面23係由圖5A中之虛線指示。The electric field E may be considered to extend in a direction perpendicular (eg, substantially perpendicular) to the first layer 18 and / or the second layer 20. The electric field E can be considered as a built-in electric field or a vertical built-in electric field. The interface 23 between the first layer 18 and the second layer 20 is indicated by the dashed line in FIG. 5A.

所產生之帶電載流子24之分離可為瞬時的。換言之，所產生之電荷載流子24在電荷載流子可複合之前可由電場E分離。The separation of the generated charged carriers 24 may be instantaneous. In other words, the generated charge carriers 24 can be separated by the electric field E before the charge carriers can be recombined.

如在圖5A中可看到，分離之電荷載流子24a、24b可累積於空間電荷區或空乏區22之對置側22a、22b處或附近。舉例而言，電子24a可累積於空間電荷區或空乏區22之底面22b上或附近，且電洞24b可累積於空間電荷區或空乏區22之頂面22a上或附近。應瞭解，在其他實例中，第一材料及第二材料可經選擇使得電子累積於空間電荷區或空乏區22之頂面上或附近且電洞累積於空間電荷區或空乏區22之底面上或附近。在空間電荷區或空乏區延伸至全部光學薄膜中之實例中，電子可累積於第一層18之底面上或附近且電洞可累積於第二層20之頂面上或附近，或反之亦然。As can be seen in FIG. 5A, the separated charge carriers 24 a, 24 b may be accumulated at or near the opposite sides 22 a, 22 b of the space charge region or the empty region 22. For example, electrons 24a may accumulate on or near the bottom surface 22b of the space charge or empty region 22, and holes 24b may accumulate on or near the top surface 22a of the space charge or empty region 22. It should be understood that in other examples, the first material and the second material may be selected such that electrons accumulate on or near the top surface of the space charge region or empty region 22 and holes accumulate on the bottom surface of the space charge region or empty region 22 Or nearby. In the example where the space charge region or empty region extends into the entire optical film, electrons can accumulate on or near the bottom surface of the first layer 18 and holes can accumulate on or near the top surface of the second layer 20, or vice versa Of course.

如上文所論述，所產生之電荷載流子24之間的分離可減小或防止所產生之電荷載流子複合，藉以所產生之電荷載流子複合可被認為係在光學薄膜16中或上產生熱之熱源中的一者。圖5B相似於圖4B，且描繪與在電場不存在的情況下之熱源之貢獻28a相比，在電場E存在於光學薄膜16中的情況下之熱源之貢獻28b。如圖5B中可看到，相對於在電場不存在的情況下之熱源之貢獻28a，在電場E存在於光學薄膜16中的情況下之熱源之貢獻28b減小。另外，相對於在電場不存在的情況下之熱源之貢獻28a與散熱片之貢獻30之間的差D1，在電場E存在的情況下之熱源之貢獻28b與散熱片之貢獻30之間的差D2減小。在電場E存在的情況下之熱源之貢獻28b之寬度(例如半高全寬(FWHM))可與在電場不存在的情況下之熱源之貢獻28a之寬度(例如半高全寬(FWHM))相同(例如大體上相同)。As discussed above, the separation between the generated charge carriers 24 can reduce or prevent the generated charge carrier recombination, whereby the generated charge carrier recombination can be considered to be in the optical film 16 or One of the heat sources that generates heat. FIG. 5B is similar to FIG. 4B and depicts the contribution 28b of the heat source in the case where the electric field E is present in the optical film 16 compared to the contribution 28a of the heat source in the absence of the electric field. As can be seen in FIG. 5B, the contribution 28 b of the heat source is reduced in the case where the electric field E is present in the optical film 16 compared to the contribution 28 a of the heat source in the absence of the electric field. In addition, compared to the difference D1 between the contribution 28a of the heat source and the contribution 30 of the heat sink in the absence of the electric field, the difference D1 between the contribution 28b of the heat source and the contribution 30 of the heat sink in the presence of the electric field E D2 decreases. The width of the heat source contribution 28b (e.g., FWHM) in the presence of the electric field E can be the same as the width of the heat source contribution 28a (e.g., FWHM) in the absence of the electric field (e.g., approximately Same as above).

圖6示意性地描繪在輻照期間之光學薄膜16。如上文所論述，分離之電荷載流子24a、24b累積於空間電荷區或空乏區22之對置側22a、22b上或附近。所產生之電荷載流子24a、24b之分離及/或累積可誘發另一電場。另一電場可由累積於照明體積26中及照明體積26外部之區中的電荷載流子24a、24b之間的電位差造成。該另一電場可在與第一層18及/或第二層20平行(例如大體平行)之方向上延伸。該另一電場可被認為係側向內建式電場。該另一電場可造成經累積電荷載流子24a、24b自照明體積26向外及/或遠離照明體積26移動。舉例而言，另一電場可造成電荷載流子24a、24b朝向光學薄膜16之周邊或周邊區域移動。電荷載流子24a、24b之移動在圖6中由被標註為M之箭頭指示。經累積電荷載流子24a、24b另外可經歷排斥力，諸如(例如)排斥庫侖(Coulomb)力。排斥力亦可致使電荷載流子24a、24b自照明體積26向外及/或遠離照明體積26移動。FIG. 6 schematically depicts the optical film 16 during irradiation. As discussed above, the separated charge carriers 24a, 24b are accumulated on or near the opposite sides 22a, 22b of the space charge region or empty region 22. The separation and / or accumulation of the generated charge carriers 24a, 24b can induce another electric field. Another electric field may be caused by the potential difference between the charge carriers 24a, 24b accumulated in the illumination volume 26 and in a region outside the illumination volume 26. The other electric field may extend in a direction parallel (eg, substantially parallel) to the first layer 18 and / or the second layer 20. This other electric field can be considered a laterally built-in electric field. This other electric field may cause the accumulated charge carriers 24a, 24b to move outward and / or away from the illumination volume 26. For example, another electric field may cause the charge carriers 24 a, 24 b to move toward the periphery or the peripheral region of the optical film 16. The movement of the charge carriers 24a, 24b is indicated by an arrow labeled M in FIG. The accumulated charge carriers 24a, 24b may additionally undergo a repulsive force, such as, for example, a Coulomb force. The repulsive force may also cause the charge carriers 24a, 24b to move outward from the illumination volume 26 and / or away from the illumination volume 26.

圖7A示意性地描繪其中一些所累積電荷載流子24a、24b已自照明體積26向外及/或遠離照明體積26移動的光學薄膜16。在照明體積26外部之區中，電荷載流子24a、24b可複合。此可導致熱遍及光學薄膜16之面積或體積32散佈及/或可減小光學薄膜16之局部加熱。另外，此可允許在輻射光束B之較高功率(諸如(例如)高於200 W之功率)下使用光學薄膜16。FIG. 7A schematically depicts an optical film 16 in which some of the accumulated charge carriers 24 a, 24 b have moved outward and / or away from the illumination volume 26. In the area outside the illumination volume 26, the charge carriers 24a, 24b may recombine. This may cause heat to spread throughout the area or volume 32 of the optical film 16 and / or may reduce local heating of the optical film 16. In addition, this may allow the use of the optical film 16 at a higher power of the radiation beam B, such as, for example, a power higher than 200 W.

另一電場可能約為104 V/m。此可導致電荷載流子24a、24b約為105 m/s之速度或速率。橫越光學薄膜16之輻射光束B之移動可包含約0.5 m/s之速度或速率。此可允許經累積電荷載流子24a、24b以高於橫越光學薄膜之輻射光束B之速度或速率的速度或速率散佈或移動。Another electric field may be about 10 4 V / m. This may result in the charge carriers 24a, 24b about 10 5 m / s of velocity or rate. The movement of the radiation beam B across the optical film 16 may include a speed or velocity of about 0.5 m / s. This may allow the accumulated charge carriers 24a, 24b to spread or move at a speed or rate higher than the speed or rate of the radiation beam B across the optical film.

圖7B描繪與在電場E及另一電場存在於光學薄膜16中的情況下之熱源之貢獻28b相比，在電場不存在於光學薄膜16中的情況下之熱源之貢獻28a。可看到，與在電場不存在於光學薄膜16中的情況下之熱源之貢獻28a相比，在電場E及另一電場存在的情況下之熱源之貢獻28b減小。另外，與在電場不存在於光學薄膜16中的情況下之熱源之貢獻28a之寬度(例如半高全寬(FWHM))相比，在電場E及另一電場存在的情況下之熱源之貢獻28b之寬度(例如半高全寬(FWHM))增大。換言之，光學薄膜16之局部加熱可被認為將散佈，如上文所論述。相比於在電場不存在的情況下之熱源之貢獻28a與散熱片之貢獻30之間的差D1，在電場E及另一電場E存在的情況下之熱源之貢獻28b與散熱片之貢獻30之間的差D2減小。換言之，當電場及另一電場存在時，光學薄膜之局部加熱可被認為將減小。FIG. 7B depicts the contribution 28a of the heat source in the case where the electric field is not present in the optical film 16 compared to the contribution 28b of the heat source in the case where the electric field E and another electric field are present in the optical film 16. It can be seen that the contribution 28b of the heat source in the presence of the electric field E and another electric field is reduced compared to the contribution 28a of the heat source in the case where the electric field is not present in the optical film 16. In addition, compared with the width of the heat source contribution 28a in the case where the electric field is not present in the optical film 16, such as the full-width at half maximum (FWHM), the contribution of the heat source in the presence of the electric field E and another electric field is 28b. The width (e.g., FWHM) increases. In other words, the local heating of the optical film 16 may be considered to be spread, as discussed above. Compared to the difference D1 between the contribution 28a of the heat source and the contribution 30 of the heat sink in the absence of an electric field, the contribution 28b of the heat source and the contribution 30 of the heat sink in the presence of the electric field E and another electric field E The difference D2 decreases. In other words, when an electric field and another electric field are present, the local heating of the optical film can be considered to be reduced.

圖8A及圖8B示意性地描繪光學薄膜16之實施例，在該光學薄膜中第一材料包含硼且第二材料負摻雜矽，諸如(例如)負摻雜多晶矽。應瞭解，在其他實施例中，第二材料可包含未摻雜(例如本質)矽。亦應理解，在其他實施例中，第一材料可包含矽且第二材料可包含硼。另外，包含硼之第一材料可經正摻雜或負摻雜。藉由摻雜第一材料及/或第二材料，可增大第一材料及/或第二材料之導電性。此可增強所產生之電荷載流子之移動及/或減小光學薄膜16之加熱。8A and 8B schematically depict an embodiment of an optical film 16 in which a first material includes boron and a second material is negatively doped silicon, such as, for example, negatively doped polycrystalline silicon. It should be understood that in other embodiments, the second material may include undoped (eg, intrinsic) silicon. It should also be understood that in other embodiments, the first material may include silicon and the second material may include boron. In addition, the first material containing boron may be positively or negatively doped. By doping the first material and / or the second material, the conductivity of the first material and / or the second material can be increased. This may enhance the movement of the generated charge carriers and / or reduce the heating of the optical film 16.

圖8A示意性地描繪在第一層18配置於第二層20上之前之光學薄膜16。圖8B示意性地描繪在第一層18配置於第二層20上之後之光學薄膜16。包含硼之第一層18在包含矽之第二層20上之配置可導致形成硼-矽接面。自圖8B可看到，當第一層18配置於第二層20上時，空間電荷區或空乏區22形成於第二層20中。圖8A及圖8B另外示意性地描繪界面區或系統19，其形成於第一層18與第二層20之間，例如第一層18與第二層20之間的界面處或附近，如下文將描述。在第一材料包含硼且第二材料包含負摻雜矽(或本質矽)的實施例中形成空間電荷區或空乏區22與在pn接面或肖特基接面中形成空間電荷區或空乏區不同。空間電荷區或空乏區22之形成可被認為係由在第一層18與第二層20之間的界面處電荷載流子之轉移造成。FIG. 8A schematically depicts the optical film 16 before the first layer 18 is disposed on the second layer 20. FIG. 8B schematically depicts the optical film 16 after the first layer 18 is disposed on the second layer 20. The configuration of the first layer 18 containing boron on the second layer 20 containing silicon may result in the formation of a boron-silicon interface. As can be seen from FIG. 8B, when the first layer 18 is disposed on the second layer 20, a space charge region or an empty region 22 is formed in the second layer 20. 8A and 8B additionally schematically depict an interface region or system 19 formed between the first layer 18 and the second layer 20, such as at or near the interface between the first layer 18 and the second layer 20, as follows The text will be described. In the embodiment where the first material contains boron and the second material contains negatively doped silicon (or intrinsic silicon), a space charge region or empty region 22 is formed and a space charge region or empty is formed in a pn junction or a Schottky junction District is different. The formation of the space charge region or the empty region 22 can be considered to be caused by the transfer of charge carriers at the interface between the first layer 18 and the second layer 20.

硼具有約為2之電負度且矽具有約為1.9之電負度。硼與矽之間的電負度之差可造成硼原子與矽原子之間鍵結之離子性。硼原子與矽原子之間的離子鍵結可導致在第一層18與第二層20之間的界面處形成偶極。該偶極可界定或形成界面區或系統19。界面區或系統19可被認為界定矽側處或附近之帶正電荷側19a及硼側處或附近之帶負電荷側19b。當第一層18配置於第二層20上且界面區或系統19形成於例如至少一個矽原子單層與至少一個硼原子單層之間時，且可能發生電子自界面區或系統19處之矽原子至相鄰硼原子之轉移。此可歸因於硼原子與矽原子之間的離子鍵結，其能夠接受額外電子。此可導致硼原子與矽原子之間的鍵結之鍵結長度增大。硼與矽之間的鍵結之鍵結長度增大可允許硼接受另外電子。此可造成界面區或系統19之帶正電荷側19a中的正電荷減小，其在圖8B中指示。電子可例如歸因於作用於電子之庫侖力而朝向界面區或系統19之帶正電荷側19a擴散。電子朝向界面系統19 (例如其帶正電荷側19a)之擴散可留下正淨電荷且導致形成空間電荷區或空乏區22。淨正淨電荷可在第一層18與第二層20之間的界面區或系統19附近誘發電場E。電子朝向界面系統19之擴散可導致在第二層20 (例如矽)中形成空間電荷區或空乏區22。Boron has an electronegativity of about 2 and silicon has an electronegativity of about 1.9. The difference in electronegativity between boron and silicon can cause the ionicity of the bond between the boron atom and the silicon atom. An ionic bond between a boron atom and a silicon atom may cause a dipole to form at an interface between the first layer 18 and the second layer 20. The dipole may define or form an interface region or system 19. The interface region or system 19 may be considered to define a positively charged side 19a at or near the silicon side and a negatively charged side 19b at or near the boron side. When the first layer 18 is disposed on the second layer 20 and the interface region or system 19 is formed between, for example, at least one silicon atom monolayer and at least one boron atom monolayer, electrons may occur from the interface region or system 19 Transfer of silicon atoms to adjacent boron atoms. This can be attributed to the ionic bonding between the boron atom and the silicon atom, which is capable of accepting additional electrons. This can lead to an increase in the bond length of the bond between the boron atom and the silicon atom. The increased bond length of the bond between boron and silicon may allow boron to accept additional electrons. This may cause a decrease in the positive charge in the interface region or the positively charged side 19a of the system 19, which is indicated in Figure 8B. The electrons can, for example, be diffused toward the interface region or the positively charged side 19a of the system 19 due to the Coulomb force acting on the electrons. The diffusion of electrons towards the interface system 19 (eg, its positively charged side 19a) may leave a positive net charge and lead to the formation of a space charge region or empty region 22. The net positive net charge may induce an electric field E near the interface region between the first layer 18 and the second layer 20 or the system 19. The diffusion of electrons towards the interface system 19 may result in the formation of a space charge region or a depletion region 22 in the second layer 20 (eg, silicon).

第一層18可包含具有一定厚度的至少一個硼原子單層，以在第二層20中形成空間電荷區或空乏區。在一些實例中，第一層18之厚度可約為1奈米至2奈米，諸如(例如) 1.5奈米。包含硼之第一層18可藉由如以上所描述的導致在第二層20中形成空間電荷區或空乏區22的任一沈積技術而形成。可導致在第二層20中形成空間電荷區或空乏區22的例示性沈積技術可包含化學氣相沈積(CVD)或原子層沈積(ALD)技術。舉例而言，V . Mohammadi 之「Low Temperature PureB Technology for CMOS Compatible Photodetectors 」(Doctoral Thesis ， TU Delft ( http :// repository . tudelft . nl /) ， 2015 年 )中進一步描述空間電荷區或空乏區之形成及/或用於形成硼-矽接面之例示性沈積技術。使用CVD或ALD所形成之硼亦可被稱作「純B (PureB)」。將例如使用CVD或ALD所形成之硼用作第一層18之第一材料且將矽用作第二層20之第二材料可允許在第一層18與第二層20之間形成幾乎無損的界面區或系統19。此繼而可提供相比於其他材料而沿著或處於界面區或系統19之增大之導電性。The first layer 18 may include at least one boron atom monolayer having a certain thickness to form a space charge region or a depletion region in the second layer 20. In some examples, the thickness of the first layer 18 may be about 1 nm to 2 nm, such as, for example, 1.5 nm. The first layer 18 containing boron may be formed by any of the deposition techniques described above which results in the formation of a space charge region or a depletion region 22 in the second layer 20. Exemplary deposition techniques that may result in the formation of space charge regions or empty regions 22 in the second layer 20 may include chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques. For example, V Mohammadi of "Low Temperature PureB Technology for CMOS Compatible Photodetectors". (Doctoral Thesis, TU Delft ( http: // repository tudelft nl /), 2015 years.) Is further described in the space charge region or depletion zone Exemplary deposition techniques for forming and / or forming a boron-silicon interface. Boron formed using CVD or ALD can also be referred to as "PureB". Using, for example, boron formed using CVD or ALD as the first material of the first layer 18 and using silicon as the second material of the second layer 20 may allow formation of almost non-destructive between the first layer 18 and the second layer 20 Interface area or system 19. This in turn may provide increased conductivity along or at the interface region or system 19 compared to other materials.

第二層20可包含約20奈米至50奈米，諸如(例如)40奈米之厚度。The second layer 20 may include a thickness of about 20 nanometers to 50 nanometers, such as, for example, 40 nanometers.

硼及矽可被認為對EUV輻射(例如具有約為13.5奈米之波長之輻射)透射。將硼用作第一層之第一材料且將矽用作第二層之第二材料可允許光學薄膜16透射高於90%的EUV輻射。Boron and silicon can be thought of as transmitting to EUV radiation, such as radiation having a wavelength of about 13.5 nanometers. Using boron as the first material of the first layer and silicon as the second material of the second layer may allow the optical film 16 to transmit more than 90% of EUV radiation.

如以上所描述及圖8B中示意性地所描繪，空間電荷區或空乏區22自界面區或系統19延伸至第二層20之第二材料中。空間電荷區或空乏區22可包含在微米範圍內或小於1微米之寬度。舉例而言，空間電荷區或空乏區22可包含約100奈米至500奈米之寬度。儘管在圖8B中將空間電荷區或空乏區22描繪為延伸至第二層20之部分中，但應瞭解，在其他實施例中，替代地或另外，空間電荷區或空乏區可延伸至第一層或大體上全部光學薄膜中。換言之，整個光學薄膜可自可移動電荷載流子空乏。As described above and schematically depicted in FIG. 8B, a space charge region or empty region 22 extends from the interface region or system 19 into the second material of the second layer 20. The space charge region or empty region 22 may include a width in the micrometer range or less than 1 micrometer. For example, the space charge region or empty region 22 may include a width of about 100 nanometers to 500 nanometers. Although the space charge region or empty region 22 is depicted as extending into the portion of the second layer 20 in FIG. 8B, it should be understood that in other embodiments, the space charge region or empty region may extend to the first layer One or substantially all of the optical film. In other words, the entire optical film can be depleted from the movable charge carriers.

圖8C示意性地描繪橫越空間電荷區或空乏區22之電荷密度及電場強度。如以上所描述，電子朝向界面系統或區19 (例如其帶正電荷側19a)之擴散可留下正淨電荷且導致形成空間電荷區或空乏區22。另外，負電荷可存在或累積於界面區或系統19之帶負電荷側19b處或附近，如圖8C中所指示。電場強度在第一層18與第二層20之間的界面區或系統19處具有最大值。舉例而言，電場可包含在第一層與第二層之間的界面系統或區19處約為107 V/m之最大強度。FIG. 8C schematically depicts the charge density and electric field strength across the space charge region or empty region 22. As described above, the diffusion of electrons toward the interface system or region 19 (eg, its positively charged side 19a) may leave a positive net charge and lead to the formation of a space-charged region or empty region 22. In addition, negative charges may exist or accumulate at or near the interface region or negatively charged side 19b of the system 19, as indicated in FIG. 8C. The electric field strength has a maximum at the interface region or system 19 between the first layer 18 and the second layer 20. For example, the electric field may include a maximum intensity of about 10 7 V / m at the interface system or region 19 between the first layer and the second layer.

圖9描繪相對於光電二極體之波長之響應度的曲線圖，該光電二極體包含關於圖8A及圖8B所描述之光學薄膜16之第一層18與第二層20。換言之，該光電二極體包含含硼之第一層，其配置於包含負摻雜矽之第二層上。針對自同一基板形成之三個光電二極體量測光電二極體之響應度。針對約為或大於13.5奈米之波長，針對三個樣本之經量測之響應度MR接近於矽之理論響應度TR，其約為0.27。此可導致光電二極體的幾乎100%的量子效率。量子效率對應於經量測響應度相對於理論響應度之比率。圖9 中所描繪之理論響應度TR係基於每波長約為13.5奈米之光子所產生的26個電子電洞對來計算，且假定幾乎無損失及/或理想系統。可在例如F . Scholze 等人之「Mean energy required to produce an electron - hole pair in silicon for photons of energies between 50 and 1500 eV 」(Journal of Applied Physics ，第 84 卷，第 4 號， 第 2926 至 2939 頁 , ， 1998 年 )及F . Scholze 等人之「Determination of the electron - hole pair creation energy for semiconductors from the spectral responsivity of photodiodes 」(Nuclear Instruments and Methods in Physics Research A 439 ，第 208 至 215 頁， 2000 年 )中找到理論響應度之例示性計算。量子效率可被認為指示每給定能量之光子之所產生的電子-電洞對。換言之，量子效率可被認為係由光電二極體收集之電荷載流子對入射於光電二極體上的具有給定能量之光子之數目的比率。因此，如以上所描述的包含含硼之第一層及含矽之第二層之光學薄膜可被認為有效地用於將光子轉換成電子-電洞對，該等電子-電洞對隨後藉由誘發之電場E及另一電場分離且移動遠離照明體積26。此可減小光學薄膜16之局部加熱。FIG. 9 depicts a graph of the responsivity with respect to the wavelength of a photodiode including the first layer 18 and the second layer 20 of the optical film 16 described with reference to FIGS. 8A and 8B. In other words, the photodiode includes a first layer containing boron, which is disposed on a second layer containing negatively doped silicon. For three photodiodes formed from the same substrate, measure the responsivity of the photodiode. For a wavelength of approximately 13.5 nm or greater, the measured responsivity MR for the three samples is close to the theoretical responsivity TR of silicon, which is approximately 0.27. This can lead to a quantum efficiency of almost 100% of the photodiode. Quantum efficiency corresponds to the ratio of measured responsivity to theoretical responsivity. The theoretical responsivity TR depicted in Figure 9 is calculated based on 26 electron hole pairs generated by photons with a wavelength of about 13.5 nanometers per wavelength, and assumes almost no loss and / or an ideal system. Available in, for example, " Mean energy required to produce an electron - hole pair in silicon for photons of energies between 50 and 1500 eV " by F. Scholze et al . ( Journal of Applied Physics , Vol. 84 , No. 4 , Nos . 2926 to 2939 . page, 1998) and F Scholze et al.'s "Determination of the electron - hole pair creation energy for semiconductors from the spectral responsivity of photodiodes " (Nuclear Instruments and Methods in Physics Research A 439, 215 pp. 208 to 2000 An example calculation of theoretical responsivity was found in ). Quantum efficiency can be thought of as indicating an electron-hole pair produced by a photon of a given energy. In other words, quantum efficiency can be thought of as the ratio of the charge carriers collected by a photodiode to the number of photons of a given energy incident on the photodiode. Therefore, an optical film comprising the first layer containing boron and the second layer containing silicon as described above can be considered to be effectively used to convert photons into electron-hole pairs, which are subsequently borrowed It is separated and moved away from the illumination volume 26 by the induced electric field E and another electric field. This can reduce local heating of the optical film 16.

儘管在圖8a至圖8C之實施例中，硼被描述為第一層之第一材料且負摻雜矽被描述為第二層之第二材料，但應理解，本文中所揭示之光學薄膜不限於此等材料。舉例而言，第二材料可包含結晶矽(例如單晶矽)、碳化矽、氮化矽及石墨烯中之至少一者，其可經正摻雜或負摻雜或未摻雜的(例如本質的)。Although in the embodiment of FIGS. 8a to 8C, boron is described as the first material of the first layer and negatively doped silicon is described as the second material of the second layer, it should be understood that the optical film disclosed herein It is not limited to these materials. For example, the second material may include at least one of crystalline silicon (e.g., single crystal silicon), silicon carbide, silicon nitride, and graphene, which may be positively or negatively doped or undoped (e.g., intrinsical).

應瞭解，本文中所描述之第一材料及第二材料中之至少一者可包含半導體材料。此可允許在第一層配置於第二層上時形成空間電荷區或空乏區。第一材料及第二材料中之另一者亦可包含半導體材料。第一層及第二層中之至少一者或兩者之例示性半導體材料可包含結晶矽(例如單晶矽)、碳化矽、氮化矽、鍺及石墨烯中之至少一者，其可經正摻雜或負摻雜。可用以負摻雜至少矽之例示性材料可包含砷(As) (例如濃度約為1018 cm- 3 至1020 cm- 3 )、銻(Sb) (例如濃度約為1018 cm- 3 至1020 cm- 3 )或磷(P) (例如濃度約為1018 cm- 3 至1020 cm- 3 )。可用以正摻雜矽之例示性材料可包含硼(B) (例如濃度約為1018 cm- 3 至5×1020 cm- 3 )。例示性半導體材料可摻雜使得存在摻雜劑濃度之突變或逐漸改變。舉例而言，如以上關於圖2至圖7B所描述，第一層18與第二層20可被認為形成pn接面。It should be understood that at least one of the first material and the second material described herein may include a semiconductor material. This may allow space charge regions or empty regions to be formed when the first layer is disposed on the second layer. The other of the first material and the second material may also include a semiconductor material. Exemplary semiconductor materials for at least one or both of the first and second layers may include at least one of crystalline silicon (e.g., single crystal silicon), silicon carbide, silicon nitride, germanium, and graphene, which may be Positively or negatively doped. Exemplary materials that can be negatively doped with at least silicon can include arsenic (As) (e.g., at a concentration of about 10 18 cm - 3 to 10 20 cm - 3 ), antimony (Sb) (e.g., at a concentration of about 10 18 cm - 3 to 10 20 cm - 3 ) or phosphorus (P) (for example, a concentration of about 10 18 cm - 3 to 10 20 cm - 3 ). An exemplary material that can be used to positively doped silicon can include boron (B) (eg, at a concentration of about 10 18 cm - 3 to 5 × 10 20 cm - 3 ). Exemplary semiconductor materials can be doped such that there is a sudden or gradual change in dopant concentration. For example, as described above with respect to FIGS. 2 to 7B, the first layer 18 and the second layer 20 may be considered to form a pn junction.

在其他實施例中，第一材料及第二材料中之至少一者可包含金屬且第一材料及第二材料中之至少另一者包含半導體材料。半導體材料可經正或負摻雜。在此等實例中，第一層與第二層可被認為形成肖特基接面。在此等實施例中，空間電荷區或空乏區可被認為延伸至半導體材料中。用於形成肖特基接面之例示性金屬可包含鉑及/或銥。可將諸如(例如)反向偏壓電壓之電壓施加至光學薄膜16，例如以增大空間電荷區或空乏區之寬度。光學薄膜可包含用以允許施加電壓之電極，如下文將描述。In other embodiments, at least one of the first material and the second material may include a metal and at least one of the first material and the second material includes a semiconductor material. Semiconductor materials can be positively or negatively doped. In these examples, the first layer and the second layer may be considered to form a Schottky junction. In these embodiments, the space charge region or the empty region may be considered to extend into the semiconductor material. Exemplary metals for forming a Schottky junction may include platinum and / or iridium. A voltage such as, for example, a reverse bias voltage may be applied to the optical film 16, for example, to increase the width of the space charge region or the empty region. The optical film may include an electrode to allow a voltage to be applied, as will be described below.

另外或替代地，第一材料及/或第二材料包含螢光摻雜劑。螢光摻雜劑可增大自光學薄膜16之輻射發射。例示性螢光摻雜劑可包含銪及/或鋱。螢光摻雜劑之濃度可約為或小於1020 cm- 3 。舉例而言，螢光摻雜劑可吸收輻射光束B之至少一些輻射。此可將螢光摻雜劑激發至較高能態，從中螢光摻雜劑可非輻射地鬆弛，例如在一或多個聲子之發射下，且發射波長長於所吸收輻射之波長的輻射。此可允許螢光摻雜劑充當散熱片及/或減小光學薄膜16之局部加熱。Additionally or alternatively, the first material and / or the second material includes a fluorescent dopant. The fluorescent dopant can increase the radiation emission from the optical film 16. Exemplary fluorescent dopants may include rhenium and / or rhenium. The concentration of the fluorescent dopant may be about or less than 10 20 cm - 3 . For example, a fluorescent dopant can absorb at least some of the radiation of the radiation beam B. This can excite the fluorescent dopant to a higher energy state, from which the fluorescent dopant can relax non-radiatively, for example under the emission of one or more phonons, and emit radiation having a wavelength longer than the wavelength of the absorbed radiation. This may allow the fluorescent dopant to act as a heat sink and / or reduce local heating of the optical film 16.

圖10示意性地描繪用於微影裝置中或搭配微影裝置使用的例示性光學薄膜16之俯視圖。該光學薄膜16可與圖2至圖8B中之任一者中所描繪的光學薄膜相似，且可包含關於圖2至圖8B中之任一者所描述之光學薄膜之特徵中的任一者。在圖10中所描繪之實施例中，光學薄膜16包含電極34。電極34可經組態以允許將電壓施加至光學薄膜16。電壓可在光學薄膜16中誘發又一電場，諸如(例如)外部電場。該電壓可經選擇使得將電壓施加至光學薄膜會導致空間電荷區或空乏區22之寬度增大。可基於以下一或多個要求或條件選擇電壓：諸如(例如)空間電荷區或空乏區22之所需增大、歸因於所施加電壓的流動通過光學薄膜之電流之大小、由電流誘發之熱及/或又一電場與微影裝置之輻射源或其他組件中所產生之電漿之間的干涉效應。電壓可為或包含反向偏壓電壓。該又一電場可在與電場E大體上相同之方向上延伸。如在圖10中可看到，電極34係沿著光學薄膜16之周邊16c而配置。應瞭解，本文中所揭示之光學薄膜不限於包含沿著光學薄膜之周邊而配置之電極。舉例而言，在其他實施例中，電極可被提供於光學薄膜之一或多個側處及/或可嵌入於光學薄膜之至少部分或全部中。FIG. 10 schematically depicts a top view of an exemplary optical film 16 for use in or in conjunction with a lithographic apparatus. The optical film 16 may be similar to the optical film depicted in any one of FIGS. 2 to 8B and may include any of the characteristics of the optical film described in relation to any of FIGS. 2 to 8B . In the embodiment depicted in FIG. 10, the optical film 16 includes an electrode 34. The electrode 34 may be configured to allow a voltage to be applied to the optical film 16. The voltage may induce a further electric field in the optical film 16, such as, for example, an external electric field. The voltage may be selected such that applying a voltage to the optical film causes the width of the space charge region or the empty region 22 to increase. The voltage can be selected based on one or more of the following requirements or conditions: the required increase in, for example, the space charge region or empty region 22, the magnitude of the current flowing through the optical film due to the applied voltage, the current induced Interference effects between heat and / or another electric field and plasma generated in the radiating source or other components of the lithographic device. The voltage may be or include a reverse bias voltage. The further electric field may extend in substantially the same direction as the electric field E. As can be seen in FIG. 10, the electrodes 34 are arranged along the periphery 16 c of the optical film 16. It should be understood that the optical film disclosed herein is not limited to including electrodes arranged along the periphery of the optical film. For example, in other embodiments, electrodes may be provided at one or more sides of the optical film and / or may be embedded in at least part or all of the optical film.

電極34可包含導電材料，諸如(例如)金屬。可基於以下一或多個屬性來選擇導電材料：諸如(例如)對EUV輻射之相對較高透射率、對EUV輻射之相對較低反射率及/或氫氣環境中之化學穩定性。用於電極之例示性材料可包含釕(Ru)、鋯(Zr)或鉬(Mo)。包含鋯或鉬之電極34另外可包含罩蓋層。The electrode 34 may include a conductive material, such as, for example, a metal. The conductive material may be selected based on one or more of the following attributes: such as, for example, a relatively high transmittance to EUV radiation, a relatively low reflectivity to EUV radiation, and / or chemical stability in a hydrogen environment. Exemplary materials for the electrode may include ruthenium (Ru), zirconium (Zr), or molybdenum (Mo). The electrode 34 containing zirconium or molybdenum may further include a capping layer.

電極34可配置於光學薄膜16上使得外部電場在垂直於第一層及/或第二層之方向上延伸。可施加外部電場以增大豎直及/或側向內建式電場E。此可增大及/或加速所產生之電荷載流子24之分離。另外，經施加外部電場可增大所產生之電荷載流子24之速率或速度。此可允許所產生之電荷載流子以相比於在無外部電場被施加至光學薄膜的情況下之實施例更高的速率或速度移動遠離照明體積26。此可導致光學薄膜16之局部加熱減小。The electrode 34 may be disposed on the optical film 16 so that an external electric field extends in a direction perpendicular to the first layer and / or the second layer. An external electric field can be applied to increase the vertical and / or lateral built-in electric field E. This may increase and / or accelerate the separation of the generated charge carriers 24. In addition, the rate or velocity of the generated charge carriers 24 can be increased by applying an external electric field. This may allow the generated charge carriers to move away from the illumination volume 26 at a higher rate or speed than in embodiments where no external electric field is applied to the optical film. This may lead to a reduction in local heating of the optical film 16.

圖11示意性地描繪用於微影裝置中或搭配微影裝置使用的另一例示性光學薄膜16。圖11中所描繪之光學薄膜16可包含以上關於圖2至圖8B及/或圖10所描述的光學薄膜之特徵中之任一者。圖11中所描繪之光學薄膜16包含一包含第三材料之第三層36。該第三層36可配置於第一層18與第二層20之間。第三層36可經組態以充當發射層。換言之，第三層36可經組態以允許自光學薄膜發射輻射。第三層36可包含高於第一層18及/或第二層20之發射係數的發射係數。此可允許第三層36充當散熱片及/或減小光學薄膜16之局部加熱。第三材料可包含金屬，諸如(例如)鋯、鉬及/或釕。第三層可包含約3奈米至4奈米之厚度。FIG. 11 schematically depicts another exemplary optical film 16 for use in or in conjunction with a lithographic apparatus. The optical film 16 depicted in FIG. 11 may include any of the features of the optical film described above with respect to FIGS. 2 to 8B and / or FIG. 10. The optical film 16 depicted in FIG. 11 includes a third layer 36 including a third material. The third layer 36 may be disposed between the first layer 18 and the second layer 20. The third layer 36 may be configured to act as an emission layer. In other words, the third layer 36 may be configured to allow radiation to be emitted from the optical film. The third layer 36 may include an emission coefficient higher than that of the first layer 18 and / or the second layer 20. This may allow the third layer 36 to act as a heat sink and / or reduce local heating of the optical film 16. The third material may include a metal such as, for example, zirconium, molybdenum, and / or ruthenium. The third layer may include a thickness of about 3 nanometers to 4 nanometers.

圖12描繪用於微影裝置中或搭配微影裝置使用的例示性光學薄膜16。圖12中所描繪之光學薄膜16可包含以上關於圖2至圖8A、圖10及/或圖11所描述的光學薄膜之特徵中之任一者。該光學薄膜16包含：第一層18，其包含硼，例如純B；及第二層20，其包含負摻雜矽。第一層可藉由諸如(例如) CVD或ALD之沈積方法而形成，該沈積方法允許在第一材料及/或第二材料中形成空間電荷區或空乏區，如以上所描述。第一層18可包含約1奈米至2奈米，諸如(例如) 1.5奈米之厚度。第二層20可包含約20奈米至50奈米，諸如(例如) 40奈米之厚度。該光學薄膜16包含兩個罩蓋層28a、28b。第一層18及第二層20配置於罩蓋層28a、28b之間。在此實施例中，罩蓋層28a、28a包含硼，其可藉由諸如(例如)物理氣相沈積(PVD)之另一沈積技術而形成。每一罩蓋層28a、28b可包含約2奈米至4奈米之厚度。在此實施例中，鄰近於第二層20配置的罩蓋層28b包含約4奈米之厚度，且鄰近於第一層18配置的罩蓋層包含3奈米之厚度。可提供罩蓋層28a、28b以保護第一層18及/或第二層20。應瞭解，在其他實施例中，光學薄膜可包含少於或多於兩個罩蓋層。FIG. 12 depicts an exemplary optical film 16 for use in or in conjunction with a lithographic apparatus. The optical film 16 depicted in FIG. 12 may include any of the features of the optical film described above in relation to FIGS. 2 to 8A, 10 and / or 11. The optical film 16 includes: a first layer 18 containing boron, such as pure B; and a second layer 20 containing negatively doped silicon. The first layer may be formed by a deposition method such as, for example, CVD or ALD, which allows formation of a space charge region or an empty region in the first material and / or the second material, as described above. The first layer 18 may include a thickness of about 1 nanometer to 2 nanometers, such as, for example, 1.5 nanometers. The second layer 20 may include a thickness of about 20 nanometers to 50 nanometers, such as, for example, 40 nanometers. The optical film 16 includes two cover layers 28a, 28b. The first layer 18 and the second layer 20 are disposed between the cover layers 28a and 28b. In this embodiment, the capping layers 28a, 28a contain boron, which may be formed by another deposition technique such as, for example, physical vapor deposition (PVD). Each cover layer 28a, 28b may include a thickness of about 2 nm to 4 nm. In this embodiment, the cover layer 28b disposed adjacent to the second layer 20 includes a thickness of approximately 4 nanometers, and the cover layer disposed adjacent to the first layer 18 includes a thickness of 3 nanometers. Cover layers 28a, 28b may be provided to protect the first layer 18 and / or the second layer 20. It should be understood that in other embodiments, the optical film may include less than or more than two capping layers.

圖13描繪用於微影裝置中或搭配微影裝置使用的另一例示性光學薄膜16。圖13中所描繪之光學薄膜16可包含以上關於圖2至圖8B、圖10、圖11及/或圖12所描述的光學薄膜之特徵中之任一者。圖13中所描繪之光學薄膜16包含與關於圖12所描述之第一層及第二層相同的第一層18及第二層20。光學薄膜進一步包含第三層36。在此實施例中，第三層包含鋯。第三層36包含約3奈米至4奈米之厚度。該光學薄膜16包含兩個罩蓋層28a、28b。該兩個罩蓋層中之第一罩蓋層28a配置於第二層20與第三層26之間。該兩個罩蓋層中之第一罩蓋層28a包含硼，其可藉由諸如(例如) PVD之另一沈積技術而形成。該兩個罩蓋層中之第一罩蓋層28a包含約1奈米至2奈米，諸如(例如) 1.5奈米之厚度。該兩個罩蓋層中之第二罩蓋層28b配置於第三層36之下。該兩個罩蓋層中之第二罩蓋層28b包含硼，其可藉由諸如(例如) PVD之另一沈積技術而形成。該兩個罩蓋層中之第二罩蓋層28b包含約4奈米之厚度。FIG. 13 depicts another exemplary optical film 16 for use in or in conjunction with a lithographic apparatus. The optical film 16 depicted in FIG. 13 may include any of the features of the optical film described above in relation to FIGS. 2 to 8B, 10, 11 and / or 12. The optical film 16 depicted in FIG. 13 includes a first layer 18 and a second layer 20 that are the same as the first and second layers described with respect to FIG. 12. The optical film further includes a third layer 36. In this embodiment, the third layer includes zirconium. The third layer 36 includes a thickness of about 3 nm to 4 nm. The optical film 16 includes two cover layers 28a, 28b. A first cover layer 28 a of the two cover layers is disposed between the second layer 20 and the third layer 26. The first capping layer 28a of the two capping layers contains boron, which may be formed by another deposition technique such as, for example, PVD. The first cover layer 28a of the two cover layers includes a thickness of about 1 nm to 2 nm, such as, for example, 1.5 nm. The second cover layer 28 b of the two cover layers is disposed below the third layer 36. The second capping layer 28b of the two capping layers contains boron, which may be formed by another deposition technique such as, for example, PVD. The second cover layer 28b of the two cover layers includes a thickness of about 4 nm.

圖14描繪用於微影裝置中或搭配微影裝置使用的另一例示性光學薄膜16。圖14中所描繪之光學薄膜16相似於圖13中所描繪之光學薄膜。然而，該光學薄膜包含第四層40，來代替第一罩蓋層28a。第四層40可提供障壁，例如以避免第二層20之材料與第三層36之材料互混。第四層40可包含氮化矽。第四層包含約1奈米至3奈米之厚度。FIG. 14 depicts another exemplary optical film 16 for use in or in conjunction with a lithographic apparatus. The optical film 16 depicted in FIG. 14 is similar to the optical film depicted in FIG. 13. However, the optical film includes a fourth layer 40 instead of the first cover layer 28a. The fourth layer 40 may provide a barrier, for example, to avoid intermixing of the material of the second layer 20 and the material of the third layer 36. The fourth layer 40 may include silicon nitride. The fourth layer contains a thickness of about 1 nm to 3 nm.

應瞭解，本文中所揭示之光學薄膜不限於被提供為表膜或包含於表膜中。在其他實施例中，光學薄膜可配置於微影裝置，諸如(例如)投影系統中。It should be understood that the optical films disclosed herein are not limited to being provided as or included in a surface film. In other embodiments, the optical film may be configured in a lithographic device, such as, for example, a projection system.

圖15展示微影系統之另一實施例。在圖15中所描繪之實施例中，光學薄膜為微影裝置LA之部分或包含於微影裝置LA中。應瞭解，替代將光學薄膜提供於圖案化總成中或除了將光學薄膜提供於圖案化總成中以外，亦可將光學薄膜提供於微影裝置中。舉例而言，光學薄膜16可鄰近於基板台WT配置。光學薄膜16可經配置以至少部分地或完全地封閉輻射光束B投影於基板W上所通過之投影系統PS之開口，如圖15中所描繪。FIG. 15 shows another embodiment of the lithography system. In the embodiment depicted in FIG. 15, the optical film is part of or included in the lithographic apparatus LA. It should be understood that instead of or in addition to providing the optical film in the patterned assembly, the optical film may be provided in the lithographic apparatus. For example, the optical film 16 may be disposed adjacent to the substrate table WT. The optical film 16 may be configured to at least partially or completely close the opening of the projection system PS through which the radiation beam B is projected onto the substrate W, as depicted in FIG. 15.

微影裝置可包括碎屑減輕器件15。碎屑減輕器件15可配置於投影系統PS中，諸如(例如)在基板W附近。碎屑減輕器件15可經組態以將氣流導向朝向基板W，例如以減小或防止污染進入投影系統PS。The lithographic apparatus may include a debris mitigation device 15. The debris reduction device 15 may be arranged in the projection system PS, such as, for example, near the substrate W. The debris mitigation device 15 may be configured to direct airflow toward the substrate W, for example to reduce or prevent contamination from entering the projection system PS.

光學薄膜16可為碎屑減輕器件15之部分或包含於碎屑減輕器件15中。光學薄膜16可經配置以減小或防止污染進入微影裝置之投影系統。應瞭解，本文中所揭示之光學薄膜不限於鄰近於基板台而配置。舉例而言，在其他實施例中，光學薄膜可經配置於微影裝置中之其他部位處，諸如(例如)照明系統中及/或投影系統中之其他位置中。The optical film 16 may be part of or contained in the debris reduction device 15. The optical film 16 may be configured to reduce or prevent contamination from entering the projection system of the lithographic apparatus. It should be understood that the optical film disclosed herein is not limited to being disposed adjacent to the substrate stage. For example, in other embodiments, the optical film may be configured at other locations in the lithographic device, such as, for example, in a lighting system and / or other locations in a projection system.

圖15中所描繪之光學薄膜可包含關於圖2至圖8B中之任一者及/或圖10至圖14中之任一者所描述的光學薄膜之特徵中的任一者。The optical film depicted in FIG. 15 may include any of the characteristics of the optical film described with respect to any of FIGS. 2 to 8B and / or any of FIGS. 10 to 14.

用於微影中或搭配微影使用的光學薄膜16可藉由形成包含第一材料之第一層18予以製造。第一層18可藉由允許在光學薄膜中形成空間電荷區或空乏區之沈積技術而形成。用於形成第一層之例示性技術可包含化學氣相沈積(CVD)或原子層沈積(ALD)。舉例而言，第一層18可藉由包含約400℃至約700℃之溫度範圍之CVD製程而形成。包含此溫度範圍之CVD製程可適合於在如以上所描述的含硼之第一層與含矽之第二層之間形成空間電荷區。應瞭解，本文中所描述之方法不限於此等沈積技術。舉例而言，在其他實施例中，磊晶技術可用以形成第一層。The optical film 16 used in or in combination with lithography can be manufactured by forming a first layer 18 including a first material. The first layer 18 may be formed by a deposition technique that allows a space charge region or an empty region to be formed in the optical film. Exemplary techniques for forming the first layer may include chemical vapor deposition (CVD) or atomic layer deposition (ALD). For example, the first layer 18 may be formed by a CVD process including a temperature range of about 400 ° C to about 700 ° C. A CVD process including this temperature range may be suitable for forming a space charge region between the first layer containing boron and the second layer containing silicon as described above. It should be understood that the methods described herein are not limited to these deposition techniques. For example, in other embodiments, epitaxy technology may be used to form the first layer.

第一層18可形成於包含第二材料之第二層20上。第二層可藉由本文中所揭示之沈積技術中的任一者而形成。替代地，可提供，例如預先形成第二層或與第一層分離地提供第二層。舉例而言，可以基板或其類似者之形式提供第二層。如上文所論述，第一材料及第二材料經選擇使得空間電荷區或空乏區形成於光學薄膜16中。如以上所描述，空間電荷區或空乏區在光學薄膜16中誘發電場。The first layer 18 may be formed on the second layer 20 including a second material. The second layer may be formed by any of the deposition techniques disclosed herein. Alternatively, it may be provided, for example, that the second layer is formed in advance or is provided separately from the first layer. For example, the second layer may be provided in the form of a substrate or the like. As discussed above, the first material and the second material are selected such that a space charge region or an empty region is formed in the optical film 16. As described above, the space charge region or the empty region induces an electric field in the optical film 16.

在形成第一層18之前，可自第二層移除污染物及/或氧化物及/或可例如使第二層20鈍化而對抗氧化物形成。另外，在形成第一層18之前，可自第二層20移除氫。舉例而言，在「Low Temperature PureB Technology for CMOS Compatible Photodetectors 」(Doctoral Thesis ， TU Delft ( http :// repository . tudelft . nl /) ， 2015 年 )中描述在含矽之第二層上形成含硼之第一層之製程。Prior to forming the first layer 18, contaminants and / or oxides may be removed from the second layer and / or the second layer 20 may be passivated against oxide formation, for example. In addition, hydrogen may be removed from the second layer 20 before the first layer 18 is formed. For example, (Doctoral Thesis, TU Delft ( http..: // repository tudelft nl /), 2015 years) in "Low Temperature PureB Technology for CMOS Compatible Photodetectors" describes the formation of boron on the second layer of silicon-containing The first layer of the process.

圖16A、圖16C及圖17A至圖17C示意性地描繪用於微影裝置中或搭配微影裝置使用的另一例示性光學薄膜16。圖16A及圖16C描繪在運用輻射光束B輻照之前的光學薄膜，且圖17A至圖17C描繪在運用輻射光束B之輻照期間的光學薄膜16。光學薄膜16包含半導體材料。半導體材料包含摻雜材料。可選擇摻雜材料之濃度使得在光學薄膜16中誘發電場E，如下文將描述。誘發之電場可造成可在運用輻射光束B輻照光學薄膜16期間產生的電荷載流子之分離及/或分散。此可減小光學薄膜16之一或多個部分之局部加熱。所產生之電荷載流子之分散及/或分離可允許作用於光學薄膜16之熱負荷遍及光學薄膜16之增大之區域散佈。此可減小在運用輻射光束B進行輻照期間光學薄膜16之一或多個部分之加熱。16A, 16C, and 17A to 17C schematically depict another exemplary optical film 16 used in or used with a lithographic apparatus. 16A and 16C depict the optical film before irradiation with the radiation beam B, and FIGS. 17A to 17C depict the optical film 16 during the irradiation with the radiation beam B. FIGS. The optical film 16 contains a semiconductor material. The semiconductor material includes a doped material. The concentration of the doping material may be selected such that an electric field E is induced in the optical film 16, as will be described below. The induced electric field may cause separation and / or dispersion of charge carriers that may be generated during the irradiation of the optical film 16 with the radiation beam B. This can reduce local heating of one or more portions of the optical film 16. The dispersion and / or separation of the generated charge carriers may allow the thermal load acting on the optical film 16 to spread throughout the enlarged area of the optical film 16. This can reduce heating of one or more portions of the optical film 16 during irradiation with the radiation beam B.

藉由選擇摻雜材料之濃度使得在半導體材料中誘發電場，可減小光學薄膜之薄層電阻。術語「薄層電阻」可被理解為係指可在厚度上均一的薄膜之電阻之量度。光學薄膜之薄層電阻減小可允許經分離之電荷載流子例如在複合之前以增大之距離移動遠離光學薄膜之照明體積26。換言之，光學薄膜之薄層電阻減小可導致所產生之電荷載流子之行進距離較長或增大。此可允許自照明體積26較快速移除所產生之電荷載流子及/或可減小光學薄膜16之一或多個部分之局部加熱。所產生之電荷載流子之增大之行進距離亦可允許自光學薄膜16移除所產生之電荷載流子的至少一部分，如下文將描述。By selecting the concentration of the doping material to induce an electric field in the semiconductor material, the sheet resistance of the optical film can be reduced. The term "sheet resistance" can be understood to mean a measure of the resistance of a thin film that can be uniform in thickness. The reduced sheet resistance of the optical film may allow separated charge carriers to move away from the illuminated volume 26 of the optical film at an increased distance, for example, before recombination. In other words, a decrease in sheet resistance of the optical film may cause a longer or increased travel distance of the generated charge carriers. This may allow for faster removal of generated charge carriers from the illumination volume 26 and / or may reduce local heating of one or more portions of the optical film 16. The increased travel distance of the generated charge carriers may also allow removal of at least a portion of the generated charge carriers from the optical film 16, as will be described below.

摻雜材料之濃度在半導體材料中可並非均一的。換言之，摻雜材料可界定半導體材料中之摻雜梯度。摻雜梯度可包含陡摻雜梯度。光學薄膜16之第一部分或側可包含第一濃度之摻雜材料。光學薄膜16之第二部分或側可包含第二濃度之摻雜材料。摻雜材料之第一濃度可高於摻雜材料之第二濃度。光學薄膜16之薄層電阻可被認為係與半導體材料之例如表面處之摻雜位準成反比。換言之，摻雜位準之增大可導致光學薄膜16之薄層電阻減小。The concentration of the doping material may not be uniform in the semiconductor material. In other words, the doping material may define a doping gradient in the semiconductor material. The doping gradient may include a steep doping gradient. The first portion or side of the optical film 16 may include a first concentration of a doping material. The second portion or side of the optical film 16 may include a second concentration of a doping material. The first concentration of the doping material may be higher than the second concentration of the doping material. The sheet resistance of the optical thin film 16 can be considered to be inversely proportional to the doping level of, for example, the surface of the semiconductor material. In other words, an increase in the doping level may cause a reduction in sheet resistance of the optical film 16.

圖16B示意性地描繪依賴於光學薄膜16之厚度x 的供體原子濃度ND 之例示性曲線圖。應理解，供體原子濃度ND 之梯度不限於圖16B中所描繪之情形。在此實例中，供體原子可界定摻雜材料或包含於摻雜材料中。參看圖16A及圖16B，光學薄膜16之頂部部分或側16a包含比光學薄膜16之底部部分或側16b高的供體原子濃度。在光學薄膜16之頂部部分或側16a與底部部分或側16b之間，供體原子濃度可減小，諸如(例如)逐漸減小。應瞭解，本文中所揭示之光學薄膜不限於諸如供體原子濃度之分佈。舉例而言，在其他實施例中，頂部部分或側之供體原子濃度可低於光學薄膜之底部部分或側之供體濃度。FIG. 16B schematically depicts an exemplary graph illustrating the optical film 16 depends on the thickness x of the atomic concentration N D of the donor. It should be understood, for the atomic concentration gradient of the material is not limited to the case of N D in FIG. 16B depicted in the. In this example, the donor atoms may define or be included in a doping material. 16A and 16B, the top portion or side 16a of the optical film 16 contains a higher donor atom concentration than the bottom portion or side 16b of the optical film 16. Between the top portion or side 16a and the bottom portion or side 16b of the optical film 16, the donor atom concentration may be reduced, such as, for example, gradually. It should be understood that the optical films disclosed herein are not limited to distributions such as donor atomic concentration. For example, in other embodiments, the donor atom concentration on the top portion or side may be lower than the donor concentration on the bottom portion or side of the optical film.

摻雜梯度可造成可呈電子42之形式的可移動電荷載流子(或大部分電荷載流子)擴散。舉例而言，電子42可自光學薄膜16之頂部部分或側16a朝向光學薄膜之底部部分或側16b擴散。電子42擴散會留下可呈離子化供體之形式的正淨電荷。在圖16C中由「+」及「-」指示之正電荷與負電荷之分離誘發電場E。The doping gradient can cause mobile charge carriers (or most charge carriers) to diffuse in the form of electrons 42. For example, electrons 42 may diffuse from the top portion or side 16a of the optical film 16 toward the bottom portion or side 16b of the optical film. The diffusion of electrons 42 leaves a positive net charge that can be in the form of an ionized donor. The separation-inducing electric field E of the positive charge and the negative charge indicated by "+" and "-" in FIG. 16C.

誘發之電場E在與擴散製程相對之方向上延伸。電場E可被認為係內建式電場或豎直內建式電場。在此實施例中，電場E在垂直於(例如大體上垂直於)光學薄膜16之頂部部分或側16a及/或底部部分或側16b之方向上延伸。The induced electric field E extends in a direction opposite to the diffusion process. The electric field E can be considered as a built-in electric field or a vertical built-in electric field. In this embodiment, the electric field E extends in a direction perpendicular to (eg, substantially perpendicular to) the top portion or side 16 a and / or the bottom portion or side 16 b of the optical film 16.

儘管以上實例參考供體原子濃度，但應瞭解，在其他實施例中，除了供體原子以外或代替供體原子，亦可以受體原子之形式提供摻雜材料。Although the above examples refer to the donor atom concentration, it should be understood that in other embodiments, the doping material may be provided in the form of acceptor atoms in addition to or instead of donor atoms.

摻雜材料之濃度可經選擇使得誘發之電場E造成在運用輻射光束B輻照光學薄膜16期間所產生的電荷載流子24a、24b分離。另外或替代地，摻雜材料之濃度可經選擇使得誘發之電場約為或大於107 V/m。舉例而言，摻雜材料之濃度可經選擇為在約1022 cm- 3 與1014 cm- 3 之間變化。The concentration of the doping material can be selected such that the induced electric field E causes the charge carriers 24a, 24b generated during the irradiation of the optical film 16 with the radiation beam B to be separated. Additionally or alternatively, the concentration of the doping material may be selected such that the induced electric field is about or greater than 10 7 V / m. For example, the concentration of the doping material may be selected to vary between about 10 22 cm - 3 and 10 14 cm - 3 .

圖17A中示意性地描繪所產生之電荷載流子24之分離。分離之電荷載流子可累積於光學薄膜16之對置側或部分16a、16b上或附近。舉例而言，電子24a可累積於光學薄膜16之頂部部分或側16a上或附近，且電洞24b可累積於光學薄膜16之底部部分或側16b上或附近。The separation of the generated charge carriers 24 is schematically depicted in FIG. 17A. The separated charge carriers can be accumulated on or near the opposite side or portions 16a, 16b of the optical film 16. For example, electrons 24 a may be accumulated on or near the top portion or side 16 a of the optical film 16, and holes 24 b may be accumulated on or near the bottom portion or side 16 b of the optical film 16.

如上文關於圖6所描述，所產生之電荷載流子24a、24b之分離及/或累積可誘發另一電場。另一電場可由累積於照明體積26中及照明體積26外部之區中的電荷載流子24a、24b之間的電位差造成。該另一電場可在平行於(例如大體平行於)光學薄膜16之頂部部分或側16a及/或底部部分或側16b之方向上延伸。該另一電場可被認為係側向內建式電場。該另一電場可造成經累積電荷載流子24a、24b自照明體積26向外及/或遠離照明體積26移動。舉例而言，另一電場可造成電荷載流子24a、24b朝向光學薄膜16之周邊或周邊區域移動。電荷載流子24a、24b之移動在圖17B中由被標註為M之箭頭指示。經累積電荷載流子24a、24b另外可經歷排斥力，諸如(例如)排斥庫侖力。排斥力亦可致使電荷載流子24a、24b自照明體積26向外及/或遠離照明體積26移動。As described above with respect to FIG. 6, the separation and / or accumulation of the generated charge carriers 24a, 24b may induce another electric field. Another electric field may be caused by the potential difference between the charge carriers 24a, 24b accumulated in the illumination volume 26 and in a region outside the illumination volume 26. The other electric field may extend in a direction parallel to (eg, substantially parallel to) the top portion or side 16a and / or the bottom portion or side 16b of the optical film 16. This other electric field can be considered a laterally built-in electric field. This other electric field may cause the accumulated charge carriers 24a, 24b to move outward and / or away from the illumination volume 26. For example, another electric field may cause the charge carriers 24 a, 24 b to move toward the periphery or the peripheral region of the optical film 16. The movement of the charge carriers 24a, 24b is indicated by an arrow labeled M in FIG. 17B. The accumulated charge carriers 24a, 24b may additionally undergo repulsive forces, such as, for example, the Coulomb force. The repulsive force may also cause the charge carriers 24a, 24b to move outward from the illumination volume 26 and / or away from the illumination volume 26.

圖17C示意性地描繪其中一些所累積電荷載流子24a、24b已自照明體積26向外及/或遠離照明體積26移動的光學薄膜16。在照明體積26外部之區中，電荷載流子24a、24b可複合。此可導致熱遍及光學薄膜16之面積或體積32散佈及/或可減小光學薄膜16之局部加熱。替代地或另外，可自光學薄膜16移除電荷載流子24a、24b，如下文將描述。FIG. 17C schematically depicts an optical film 16 in which some of the accumulated charge carriers 24 a, 24 b have moved outward and / or away from the illumination volume 26. In the area outside the illumination volume 26, the charge carriers 24a, 24b may recombine. This may cause heat to spread throughout the area or volume 32 of the optical film 16 and / or may reduce local heating of the optical film 16. Alternatively or in addition, the charge carriers 24a, 24b may be removed from the optical film 16 as will be described below.

圖17A至圖17C相似於圖5A、圖6及圖7A。應瞭解，以上例如關於圖5A、圖6及圖7A所描述的任何特徵亦可適用於關於圖17A至圖17C所描述之實施例。17A to 17C are similar to FIGS. 5A, 6 and 7A. It should be understood that any of the features described above with respect to FIG. 5A, FIG. 6 and FIG. 7A may also be applied to the embodiments described with reference to FIGS. 17A to 17C.

圖16A、圖16C及圖17A至圖17C中所描繪之光學薄膜16可藉由形成或提供半導體材料予以製造。舉例而言，可使用本文中所揭示沈積技術中的任一者形成半導體材料。替代地，可提供，例如預先形成半導體材料。半導體材料可摻雜有摻雜材料。可選擇摻雜材料之濃度使得在薄膜中誘發電場。The optical film 16 depicted in FIGS. 16A, 16C, and 17A to 17C may be manufactured by forming or providing a semiconductor material. For example, a semiconductor material can be formed using any of the deposition techniques disclosed herein. Alternatively, a semiconductor material may be provided, for example, formed in advance. The semiconductor material may be doped with a doping material. The concentration of the doping material can be selected such that an electric field is induced in the thin film.

可摻雜半導體材料，作為形成半導體材料之步驟之部分。替代地，可在形成半導體材料之後例如使用擴散或植入製程(諸如(例如)離子植入)來摻雜半導體材料。A semiconductor material can be doped as part of the step of forming a semiconductor material. Alternatively, the semiconductor material may be doped after formation of the semiconductor material using, for example, a diffusion or implantation process such as, for example, ion implantation.

摻雜半導體材料之例示性步驟可包含例如使用本文中所揭示之沈積技術中之一者，諸如(例如) CVD將摻雜材料沈積於半導體材料上。在摻雜材料於半導體材料上之沈積期間，一些摻雜材料可擴散至半導體材料中。摻雜材料至半導體材料中之擴散可取決於沈積技術之溫度。An exemplary step of doping the semiconductor material may include, for example, depositing the doped material on the semiconductor material using one of the deposition techniques disclosed herein, such as, for example, CVD. During the deposition of the doped material on the semiconductor material, some doped materials may diffuse into the semiconductor material. The diffusion of the doped material into the semiconductor material may depend on the temperature of the deposition technique.

舉例而言，半導體材料可包含矽，諸如(例如)結晶或多晶矽。半導體材料包含例如使用磷之負摻雜(例如n型)矽，且磷摻雜濃度可能約為1014 cm- 3 。換言之，半導體材料可能已經摻雜有另一摻雜材料。摻雜材料可包含硼，其可用以將正摻雜(例如p型摻雜)引入至矽中。For example, the semiconductor material may include silicon, such as, for example, crystalline or polycrystalline silicon. Semiconductor materials include, for example, negatively doped (eg, n-type) silicon using phosphorus, and the phosphorus doping concentration may be about 10 14 cm - 3 . In other words, the semiconductor material may have been doped with another doping material. The doping material may include boron, which may be used to introduce positive doping (eg, p-type doping) into silicon.

可在約700℃之溫度下例如使用CVD技術將硼(諸如(例如)非晶硼)沈積於n型矽上。此製程可導致在矽表面處形成硼層，諸如純硼層。在硼於n型矽上之沈積期間，一些硼可擴散至矽中。光學薄膜之頂部部分或側16a處或附近之硼濃度可約為1021 cm- 3 至1022 cm- 3 。光學薄膜16之底部部分或側16b處或附近之硼濃度可減小至約1014 cm- 3 。Boron (such as, for example, amorphous boron) can be deposited on n-type silicon at a temperature of about 700 ° C, for example using a CVD technique. This process can result in the formation of a boron layer, such as a pure boron layer, on the silicon surface. During the deposition of boron on n-type silicon, some boron can diffuse into the silicon. The boron concentration at or near the top portion or side 16a of the optical film may be about 10 21 cm - 3 to 10 22 cm - 3 . The boron concentration at or near the bottom portion or side 16b of the optical film 16 may be reduced to about 10 14 cm - 3 .

應瞭解，可在大於或小於700℃之溫度下將硼沈積於矽上，例如以達成半導體材料中之預定或所要摻雜梯度。It should be understood that boron may be deposited on silicon at temperatures greater than or less than 700 ° C, for example to achieve a predetermined or desired doping gradient in a semiconductor material.

應瞭解，本文中所揭示之光學薄膜不限於包含作為半導體材料之矽。舉例而言，在其他實施例中，半導體材料可包含碳化矽、氮化矽及石墨烯中之至少一者。替代地，半導體材料可包含三五族化合物半導體。It should be understood that the optical films disclosed herein are not limited to including silicon as a semiconductor material. For example, in other embodiments, the semiconductor material may include at least one of silicon carbide, silicon nitride, and graphene. Alternatively, the semiconductor material may include a group three or five compound semiconductor.

亦應瞭解，本文中所揭示之光學薄膜不限於包含作為摻雜材料之硼。舉例而言，在其他實施例中，砷(As)、銻(Sb)及磷(P)中之至少一者可用作摻雜材料，例如用作負摻雜矽。It should also be understood that the optical films disclosed herein are not limited to including boron as a doping material. For example, in other embodiments, at least one of arsenic (As), antimony (Sb), and phosphorus (P) can be used as a doping material, for example, as negatively doped silicon.

圖18A至圖19B示意性地描繪根據本發明之一實施例的用於減小光學薄膜16之加熱的系統。光學薄膜16可包含以上所描述之例示性光學隔膜之特徵中的任一者。該系統44經組態以用於自光學薄膜16 (例如其一或多個部件或部分)移除電荷載流子24a、24b (例如其至少一部分)。該等電荷載流子24a、24b係在例如運用輻射光束B來輻照薄膜16期間產生。18A to 19B schematically depict a system for reducing the heating of the optical film 16 according to an embodiment of the present invention. The optical film 16 may include any of the features of the exemplary optical diaphragm described above. The system 44 is configured for removing charge carriers 24a, 24b (such as at least a portion thereof) from the optical film 16 (such as one or more parts or portions thereof). The charge carriers 24a, 24b are generated, for example, during the irradiation of the thin film 16 with the radiation beam B.

該系統可包含導電元件45，諸如(例如)電導體，其用於自光學薄膜16耗散或移除所產生之電荷載流子24a、24b。The system may include a conductive element 45, such as, for example, an electrical conductor for dissipating or removing the generated charge carriers 24a, 24b from the optical film 16.

該系統44可經組態以用於自光學薄膜16之一或多個周邊部分或周邊移除所產生之電荷載流子24a、24b，如下文將描述。該系統44可經組態以提供用於所產生之電荷載流子24a、24b之槽46。The system 44 may be configured for removing charge carriers 24a, 24b generated from one or more peripheral portions or perimeters of the optical film 16, as will be described below. The system 44 may be configured to provide a slot 46 for the generated charge carriers 24a, 24b.

系統44可經組態以使光學薄膜16短路。舉例而言，導電元件45可經配置以使光學薄膜16短路。如圖18A中所描繪，光學薄膜16之第一側或部分16a (例如頂部部分或側16a)可連接(例如電連接)至光學薄膜16之第二或部分16b (例如底部部分或側16b)。光學薄膜16之第一側或部分16a及/或第二側或部分16b可被認為係電荷載流子24a、24b例如歸因於電場E (例如豎直內建式電場)移動所朝向的部分或側，如上文所描述。光學薄膜16之第一側或部分16a可在光學薄膜16之周邊16c處或附近連接(例如電連接)至光學薄膜16之第二側或部分16b。舉例而言，光學薄膜16之第一側或部分16a可沿著光學薄膜16之周邊16c之至少一部分或全部連接(例如電連接)至第二側或部分16b。術語「周邊」可被認為涵蓋周邊區域或區。The system 44 may be configured to short the optical film 16. For example, the conductive element 45 may be configured to short the optical film 16. As depicted in FIG. 18A, a first side or portion 16a (eg, a top portion or side 16a) of the optical film 16 may be connected (eg, electrically connected) to a second or portion 16b (eg, a bottom portion or side 16b) of the optical film 16 . The first side or portion 16a and / or the second side or portion 16b of the optical film 16 may be considered to be a portion to which the charge carriers 24a, 24b are attributed, for example, due to the movement of the electric field E (e.g., a vertical built-in electric field). Or side, as described above. The first side or portion 16 a of the optical film 16 may be connected (eg, electrically connected) to the second side or portion 16 b of the optical film 16 at or near the periphery 16 c of the optical film 16. For example, the first side or portion 16a of the optical film 16 may be connected (eg, electrically connected) to the second side or portion 16b along at least a portion or all of the periphery 16c of the optical film 16. The term "perimeter" may be considered to encompass the surrounding area or zone.

替代地，光學薄膜16之第一側或部分16a可在光學薄膜16之一或多個周邊部分16c處或附近連接(例如電連接)至光學薄膜16之第二側或部分16b。該一或多個周邊部分16c可相對於彼此接近地隔開。Alternatively, the first side or portion 16 a of the optical film 16 may be connected (eg, electrically connected) to the second side or portion 16 b of the optical film 16 at or near one or more peripheral portions 16 c of the optical film 16. The one or more peripheral portions 16c may be closely spaced relative to each other.

導電元件45可經配置以將光學薄膜16之第一側或部分16a連接(例如電連接)至光學薄膜16之第二側或部分16b，如上文所描述。The conductive element 45 may be configured to connect (eg, electrically connect) the first side or portion 16a of the optical film 16 to the second side or portion 16b of the optical film 16, as described above.

可使第一側或部分16a及/或第二側或部分16b電接地。舉例而言，導電元件45可將光學薄膜16之第一側或部分16a及/或第二側或部分16b連接至電接地端。電接地端可提供用於所產生之電荷載流子24a、24b之槽46。此可允許自光學薄膜16移除所產生之電荷載流子24a、24b。自光學薄膜16移除電荷載流子24a、24b可防止或減小使得可在光學薄膜中產生熱的電荷載流子24a、24b之複合。光學薄膜16之第一側或部分16a及/或第二側或部分16b之電接地可保護光學薄膜16免於靜態地充電，及/或可防止光學薄膜之電位相對於例如圖案化器件總成或微影裝置之其他及/或相鄰組件或物件之增大。應理解，本文中所描述之系統不限於使光學薄膜(例如其第一側或部分及/或第二側或部分)電接地。舉例而言，在其他實施例中，薄膜可並非電接地。The first side or portion 16a and / or the second side or portion 16b may be electrically grounded. For example, the conductive element 45 may connect the first side or portion 16 a and / or the second side or portion 16 b of the optical film 16 to an electrical ground. The electrical ground may provide a slot 46 for the generated charge carriers 24a, 24b. This may allow the generated charge carriers 24a, 24b to be removed from the optical film 16. Removal of the charge carriers 24a, 24b from the optical film 16 can prevent or reduce recombination of the charge carriers 24a, 24b such that heat can be generated in the optical film. The electrical grounding of the first side or portion 16a and / or the second side or portion 16b of the optical film 16 may protect the optical film 16 from static charging, and / or prevent the potential of the optical film from, for example, a patterned device assembly Or the addition of other and / or adjacent components or objects to the lithographic device. It should be understood that the systems described herein are not limited to electrically grounding an optical film (eg, its first side or portion and / or second side or portion). For example, in other embodiments, the film may not be electrically grounded.

儘管圖18A將第一側或部分16a及第二側或部分16b兩者描繪為連接至可提供槽46之共同電接地端，但應瞭解，在其他實施例中，光學薄膜之第一側或部分及第二側或部分可各自連接至各別電接地端。此可另外允許光學薄膜短路。Although FIG. 18A depicts both the first side or portion 16a and the second side or portion 16b as being connected to a common electrical ground that can provide the slot 46, it should be understood that in other embodiments, the first side or The portion and the second side or portion may each be connected to a respective electrical ground terminal. This may additionally allow shorting of the optical film.

另外可將電壓或電位(例如電位)相對於電接地端施加至光學薄膜。舉例而言，當將光學薄膜安裝至諸如(例如)框架、支撐件或其類似者的安裝或支撐元件(未描繪)時，施加至該光學薄膜之電壓或電位可經選擇為對應於或匹配於(例如大體上對應於或匹配於)例如相對於電接地端之已被施加至該安裝或支撐元件之電壓或電位。此可允許光學薄膜具有與安裝或支撐元件相同(例如大體上相同)的電壓或電位。換言之，可減小或防止光學薄膜與安裝或支撐元件電隔離。In addition, a voltage or potential (eg, a potential) can be applied to the optical film with respect to the electrical ground. For example, when an optical film is mounted to a mounting or support element (not depicted) such as, for example, a frame, support, or the like, the voltage or potential applied to the optical film can be selected to correspond or match A voltage (or potential) that has been applied to the mounting or support element, such as substantially corresponding to or matched to, for example, an electrical ground. This may allow the optical film to have the same (eg substantially the same) voltage or potential as the mounting or supporting element. In other words, the optical film can be reduced or prevented from being electrically isolated from the mounting or supporting element.

圖18B示意性地描繪光學薄膜16之分散式電模型。該光學薄膜16可被認為係光電二極體，其包含複數個電容器C1 、C2 、C3 、CN 、可以串聯電阻器RS 之形式提供的複數個第一電阻器，及可以分路電阻器RSh 之形式提供的複數個第二電阻器。所產生之電荷載流子24a、24b可被認為經儲存於複數個電容器C1 、C2 、C3 、CN 中之至少一個電容器中。該複數個電容器C1 、C2 、C3 、CN 中之每一電容器可與光學薄膜16之一各別部分或區相關聯。光學薄膜16之該等部分或區在圖18B中以同心配置之圓圈指示。FIG. 18B schematically depicts a decentralized electrical model of the optical film 16. The optical film 16 may be treated as photodiode, which comprises a plurality of capacitors C 1, C 2, C 3 , C N, a plurality of first resistors connected in series can be in the form of a resistor R S is provided, and can be divided A plurality of second resistors are provided in the form of a circuit resistor R Sh . Charge carriers generated by the 24a, 24b may be considered upon storage in the plurality of capacitors C 1, C 2, C 3 , C N in the at least one capacitor. Each of the plurality of capacitors C 1 , C 2 , C 3 , and CN may be associated with a respective portion or region of one of the optical films 16. The portions or regions of the optical film 16 are indicated by concentrically arranged circles in FIG. 18B.

串聯電阻器RS 可被認為表示光學薄膜16之薄層電阻。串聯電阻器Rs 經配置以與複數個電容器C1 、C2 、C3 、CN 中之兩個或多於兩個電容器連接。可通過或經由串聯電阻器RS 自複數個電容器C1 、C2 、C3 、CN 中之至少一個電容器移除呈電流或光電流之形式的所產生之載流子24a、24b。The series resistor RS can be considered to represent the sheet resistance of the optical film 16. The series resistor R s is configured to connect with two or more capacitors of the plurality of capacitors C 1 , C 2 , C 3 , C N. By or via a series resistor R S from the plurality of capacitors C 1, C 2, C 3 , C N is removed in the form of at least one capacitor or a current generated photocurrents of the carrier 24a, 24b.

分路電阻器RSh 可被認為表示例如歸因於電荷載流子24a、24b之複合的電荷載流子24a、24b之損失，諸如(例如)電荷載流子24a、24b之內部損失。The shunt resistor R Sh may be considered to represent, for example, loss of charge carriers 24a, 24b due to recombination of charge carriers 24a, 24b, such as, for example, internal loss of charge carriers 24a, 24b.

參看圖18B，光學薄膜16之一部分或區係由輻射光束B輻照且被稱作照明體積26。歸因於運用輻射光束B輻照光學薄膜16所產生的電荷載流子24a、24b可被表示為光電二極體P上方之電流I。電荷載流子24a、24b對光學薄膜16之與光學薄膜16之照明體積26相關聯的電容器C1 充電。Referring to FIG. 18B, a portion or region of the optical film 16 is irradiated by a radiation beam B and is referred to as an illumination volume 26. The charge carriers 24a, 24b generated due to the irradiation of the optical film 16 with the radiation beam B can be expressed as a current I above the photodiode P. Charge carriers 24a, 24b of the optical film 16 and the film 16 of the optical illumination volume 26 associated capacitors C 1 charge.

所產生之電荷載流子可遍及光學薄膜之一或多個其他部分而分散。如上文所描述，歸因於另一電場，電荷載流子24a、24b遠離照明體積26及/或自照明體積26向外移動，諸如(例如)朝向光學薄膜16之周邊或一或多個周邊部分16c移動。電荷載流子24a、24b可被認為通過或經由薄層電阻器Rs 遠離照明體積26移動，藉此自與照明體積26相關聯的電容器C1 朝向剩餘電容器C2 、C3 、CN 順次地移動。此可允許所產生之電荷載流子24a、24b變得橫越光學薄膜16而分散。The generated charge carriers may be dispersed throughout one or more other portions of the optical film. As described above, due to another electric field, the charge carriers 24a, 24b move away from and / or outward from the illumination volume 26, such as, for example, toward the periphery or one or more periphery of the optical film 16 Section 16c moves. Charge carriers 24a, 24b can be considered to move away from the illumination volume 26 via the sheet or through a resistor R s, whereby the volume of the illumination 26 from the associated capacitors C 1 toward the remaining capacitor C 2, C 3, C N sequentially To move. This may allow the generated charge carriers 24a, 24b to become dispersed across the optical film 16.

在理想狀況下，可在光學薄膜16中歸因於電流流動通過薄層電阻器Rs 而產生熱。例如歸因於如上文所描述的光學薄膜16之半導體材料之選定摻雜濃度的薄層電阻之減小可導致所產生之熱減小。舉例而言，藉由例如藉由增大分路電阻器RSh 之電阻而減小薄層電阻(例如串聯電阻器Rs 之電阻)及/或減小所產生之電荷載流子24a、24b之複合(例如局部複合)，具有增大之量的所產生之電荷載流子24a、24b可在複合之前移動遠離照明體積26且到達光學薄膜16之周邊或一或多個周邊部分16c。此可允許熱產生至少遍及或橫越光學薄膜16，諸如(例如)光學薄膜16之一部分或全部而分散。如下文將描述，可藉由將所產生之熱之一部分轉移至負載件來移除該熱之該部分。In an ideal situation, heat may be generated in the optical film 16 due to the current flowing through the thin layer resistor R s . For example, a reduction in sheet resistance due to a selected doping concentration of the semiconductor material of the optical film 16 as described above may result in a reduction in the heat generated. For example, by, for example, increasing the resistance of the shunt resistor R Sh to reduce the sheet resistance (such as the resistance of the series resistor R s ) and / or reducing the amount of generated charge carriers 24a, 24b Recombination (eg, local recombination), with increased amounts of the generated charge carriers 24a, 24b, can move away from the illumination volume 26 and reach the periphery of the optical film 16 or one or more peripheral portions 16c before recombination. This may allow heat generation to be dispersed at least across or across the optical film 16, such as, for example, part or all of the optical film 16. As will be described below, a portion of the generated heat can be removed by transferring it to a load.

每當運用輻射光束B來輻照光學薄膜16之一部分或區時，就可重複上文所描述之製程。當重複對光學薄膜16之部分或區之輻照時，可產生新的電荷載流子。新近所產生之電荷載流子可貢獻於與照明體積26相關聯的電容器C1 之充電。新近所產生之電荷載流子可累積於複數個電容器C1 、C2 、C3 、CN 之一或多個電容器處。此可導致該複數個電容器C1 、C2 、C3 、CN 之該一或多個電容器超過臨限值位準。在高於臨限值位準的情況下，電荷載流子24a、24b可在遠離照明體積26及/或自照明體積26向外移動之前複合。換言之，若在產生新電荷載流子之前並未移除電容器C1 之電荷，則光電二極體P (其與照明體積26相關聯)上方之電壓位準增大且可達到臨限值位準。在高於臨限值位準的情況下，光電二極體P可變得導電且電荷載流子可複合，例如以將光電二極體P放電。此可導致在照明體積26中產生熱。Whenever a part or region of the optical film 16 is irradiated with the radiation beam B, the process described above can be repeated. When the portion or region of the optical film 16 is repeatedly irradiated, new charge carriers may be generated. The newly generated charge carriers can contribute to the charging of the capacitor C 1 associated with the illumination volume 26. The newly generated charge carriers can be accumulated at one or more capacitors of the plurality of capacitors C 1 , C 2 , C 3 , and CN . This may cause the one or more capacitors of the plurality of capacitors C 1 , C 2 , C 3 , and CN to exceed a threshold level. In the case of being above a threshold level, the charge carriers 24a, 24b may recombine before moving away from and / or outward from the illumination volume 26. In other words, if the charge of the capacitor C 1 is not removed before a new charge carrier is generated, the voltage level above the photodiode P (which is associated with the lighting volume 26) increases and a threshold level can be reached quasi. Above the threshold level, the photodiode P may become conductive and the charge carriers may recombine, for example, to discharge the photodiode P. This may cause heat to be generated in the illumination volume 26.

參看圖18B，藉由使光學薄膜16短路(例如如上文所描述)，電容器器C1 、C2 、C3 、CN 及/或分路電阻器RSh 可被認為係短路的。此可允許自光學薄膜16 ，例如自其一或多個周邊部分或周邊16c移除或放電電荷載流子24a、24b。此繼而可允許移除儲存於複數個電容器C1 、C2 、C3 、CN 之一或多個電容器中的電荷載流子，藉此防止或減小電荷載流子在該複數個電容器C1 、C2 、C3 、CN 之該一或多個電容器處之累積。新近所產生之電荷載流子可能夠遠離照明體積26及/或自照明體積26向外移動，藉此變得分散於光學薄膜16中。電荷載流子在光學薄膜16中或橫越光學薄膜16之分散可減小光學薄膜16 (例如其一或多個部分或部件)之加熱，例如局部加熱。Referring to 18B, the 16 short-circuited by that the optical film (e.g. as hereinbefore described), the capacitor device C 1, C 2, C 3 , C N and / or the shunt resistor R Sh can be treated as a short circuit. This may allow removal or discharge of charge carriers 24a, 24b from the optical film 16, such as from one or more of its peripheral portions or perimeters 16c. This in turn may allow removal of charge carriers stored in one or more capacitors of the plurality of capacitors C 1 , C 2 , C 3 , C N , thereby preventing or reducing charge carriers in the plurality of capacitors Accumulation at the one or more capacitors of C 1 , C 2 , C 3 , CN . The newly generated charge carriers may be able to move away from and / or outward from the illumination volume 26, thereby becoming dispersed in the optical film 16. The dispersion of charge carriers in or across the optical film 16 may reduce heating, such as local heating, of the optical film 16 (eg, one or more parts or components thereof).

藉由使光學薄膜16短路，如上文所描述，分路電阻器Rsh 可與可被認為待增大之有限值相關聯。換言之，例如歸因於複合的電荷載流子之損失可被認為待減小。By shorting the optical film 16, as described above, the shunt resistor Rsh can be associated with a finite value that can be considered to be increased. In other words, for example, the loss of charge carriers due to recombination can be considered to be reduced.

光學薄膜16之短路可允許該光學薄膜待放電，諸如(例如)持續放電。換言之，可自光學薄膜16移除(例如持續移除)所產生之電荷載流子24a、24b。此可允許光學薄膜16中所產生的電荷載流子持續分散，藉此減小光學薄膜(例如其一或多個部分或部件)之加熱，例如局部加熱。The short circuit of the optical film 16 may allow the optical film to be discharged, such as, for example, continuous discharge. In other words, the generated charge carriers 24a, 24b can be removed (eg, continuously removed) from the optical film 16. This may allow the charge carriers generated in the optical film 16 to be continuously dispersed, thereby reducing heating, such as local heating, of the optical film (such as one or more parts or components thereof).

圖19A及圖19B相似於圖18A及圖18B，且關於圖18A及圖18B所描述之任何特徵亦可適用於圖19A及19B中所描繪之系統。圖19A及圖19B中所描繪之系統44可包含負載件，其可以電阻性元件RL 之形式提供。然而，應瞭解，在其他實施例中，負載件可以功率可被遞送至之另一器件或元件之形式提供。在圖19A及圖19B中所描繪之實施例中，提供負載件來代替以上所描述之光學薄膜16之短路。19A and 19B are similar to FIGS. 18A and 18B, and any of the features described with respect to FIGS. 18A and 18B can also be applied to the system depicted in FIGS. 19A and 19B. 19A and 19B, depicted in the system 44 may include a load member which can form the resistive element L R provided. It should be understood, however, that in other embodiments, the load may be provided in the form of another device or element to which power can be delivered. In the embodiment depicted in FIGS. 19A and 19B, a load is provided in place of the short circuit of the optical film 16 described above.

電阻性元件RL 連接至光學薄膜16，如(例如)圖19A中所描繪。舉例而言，可例如藉由導電元件45將光學薄膜16之第一部分或側16a及/或第二部分或側16b連接至電阻性元件RL 。可沿著光學薄膜16之周邊16c的至少一部分或全部將第一側或部分16a及/或第二側或部分16b連接至電阻性元件RL 。替代地，可在光學薄膜16之一或多個周邊部分16c處或附近將第一側或部分16a及/或第二側或部分16b連接至電阻性元件RL 。該一或多個周邊部分16c可相對於彼此接近地隔開。The resistive element RL is connected to the optical film 16, as depicted, for example, in FIG. 19A. For example, the first portion or side 16a and / or the second portion or side 16b of the optical film 16 may be connected to the resistive element R L by, for example, the conductive element 45. The first side or part 16a and / or the second side or part 16b may be connected to the resistive element R L along at least a part or all of the periphery 16 c of the optical film 16. Alternatively, the first side or portion 16a and / or the second side or portion 16b may be connected to the resistive element R L at or near one or more peripheral portions 16 c of the optical film 16. The one or more peripheral portions 16c may be closely spaced relative to each other.

可基於光學薄膜16之至少另一屬性來選擇電阻性元件RL 之電阻。舉例而言，可基於光學薄膜16之薄層電阻(例如複數個串聯電阻器RS 之一或多個串聯電阻器之電阻)來選擇電阻性元件RL 之電阻。電阻性元件RL 之電阻可經選擇為匹配於(例如大體上匹配於)薄層電阻。此可允許使自光學元件16至電阻性元件RL 之功率之傳送增大或最大化。舉例而言，光學薄膜16可將輻射光束B之能量(例如光子能)轉換成功率。該功率可造成光學薄膜16之加熱。藉由選擇電阻性元件RL 之電阻以匹配於(例如大體上匹配於)薄層電阻，可將在光學薄膜(例如其一或多個部分)之輻照期間在光學薄膜16中所產生的熱(或其至少一部分)轉移至電阻性元件RL ，且藉此可將其自光學薄膜16移除。換言之，可將所產生之電荷載流子24a、24b (例如電荷載流子24a、24b之複合)之動能之至少一部分轉換成光學薄膜16外部(諸如(例如)電阻性元件RL 上方)之熱。The resistance of the resistive element R L may be selected based on at least another property of the optical film 16. For example, based on the sheet resistance of the optical film 16 (e.g., one of a plurality of series-connected resistor R S or a plurality of the resistance of the resistor in series) to select a resistive element of resistor R L. The resistance of the resistive element R L may be selected to match (eg, substantially match) the sheet resistance. This may allow the power transmission from the optical element 16 to the resistive element RL to be increased or maximized. For example, the optical film 16 can convert the energy (such as photon energy) of the radiation beam B into a success rate. This power can cause heating of the optical film 16. By selecting the resistance of the resistance element R L to match (e.g. substantially matches) the sheet resistance may be an optical film (e.g., one or more portions) of the optical film 16 generated during the irradiation of Heat (or at least a portion thereof) is transferred to the resistive element R L , and thereby it can be removed from the optical film 16. In other words, at least a portion of the kinetic energy of the generated charge carriers 24a, 24b (e.g., a composite of charge carriers 24a, 24b) can be converted into an external portion of the optical film 16 (such as, for example, above the resistive element RL ) heat.

應瞭解，可傳送至電阻性元件RL 之功率可被認為係與電流I 與電壓V 之乘積成比例。電流I 可被認為係可歸因於(例如至少部分地歸因於)所產生之電荷載流子24a、24b朝向電阻性元件RL 流動之電流。電流I 可造成橫越電阻性元件RL 之電壓V 。提供負載件(例如電阻性元件RL )可允許自光學薄膜16移除所產生之電荷載流子24a、24b (例如其一部分)。It should be appreciated, may be transmitted to the resistive element R L of the power lines can be considered proportional to the product of the current I and voltage V. Current I may be considered attributable to the system (e.g., at least partly due to) the generated charge carriers 24a, 24b toward the current resistive element R L of flow. The current I may cause a voltage V across the resistive element R L. Providing a load (eg, a resistive element RL ) may allow removal of the generated charge carriers 24a, 24b (eg, a portion thereof) from the optical film 16.

儘管圖19A及圖19B未描繪光學薄膜16之電接地端，但應瞭解，在其他實施例中，光學薄膜可連接至電接地端。舉例而言，藉由使光學薄膜電接地，可保護光學薄膜免於被靜態充電，及/或可減小或防止光學薄膜之電位相對於例如圖案化器件總成或微影裝置之其他及/或相鄰組件或物件之增大。另外，可例如相對於電接地端將電壓或電位施加至光學薄膜，如上文所描述。Although FIGS. 19A and 19B do not depict the electrical ground terminal of the optical film 16, it should be understood that in other embodiments, the optical film may be connected to the electrical ground terminal. For example, by electrically grounding the optical film, the optical film can be protected from being statically charged, and / or the potential of the optical film can be reduced or prevented relative to, for example, a patterned device assembly or other lithographic device and / Or the increase of adjacent components or objects. In addition, a voltage or potential may be applied to the optical film, for example, with respect to an electrical ground, as described above.

儘管可在本文中特定地參考在微影裝置之內容背景中之本發明之實施例，但本發明之實施例可用於其他裝置中。本發明之實施例可形成光罩檢測裝置、度量衡裝置或量測或處理諸如晶圓(或其他基板)或光罩(或其他圖案化器件)之物件之任何裝置的部件。此等裝置通常可被稱作微影工具。此微影工具可使用真空條件或環境(非真空)條件。Although specific reference may be made herein to embodiments of the invention in the context of the lithographic device, embodiments of the invention may be used in other devices. Embodiments of the invention may form part of a photomask inspection device, a metrology device, or any device that measures or processes an object such as a wafer (or other substrate) or a photomask (or other patterned device). Such devices can often be referred to as lithographic tools. This lithography tool can use vacuum conditions or ambient (non-vacuum) conditions.

在一實施例中，本發明可形成度量衡裝置之部件。度量衡裝置可用以量測形成於基板上之抗蝕劑中之經投影圖案相對於已經存在於基板上之圖案之對準。此相對對準之量測可被稱作疊對。度量衡裝置可例如經定位成緊鄰於微影裝置且可用以量測在基板(及抗蝕劑)已被處理之前之疊對。In one embodiment, the present invention may form a component of a weighing and weighing device. A weighing device can be used to measure the alignment of a projected pattern in a resist formed on a substrate with respect to a pattern already present on the substrate. This measure of relative alignment may be referred to as a stacked pair. The metrology device can be positioned, for example, next to the lithographic device and can be used to measure the stack before the substrate (and the resist) has been processed.

術語「EUV輻射」可被認為涵蓋具有在4奈米至20奈米之範圍內(例如在13奈米至14奈米之範圍內)之波長之電磁輻射。EUV輻射可具有小於10奈米(例如在4奈米至10奈米之範圍內，諸如6.7奈米或6.8奈米)之波長。The term "EUV radiation" can be considered to encompass electromagnetic radiation having a wavelength in the range of 4 nm to 20 nm (eg, in the range of 13 nm to 14 nm). EUV radiation may have a wavelength of less than 10 nanometers (for example, in the range of 4 nanometers to 10 nanometers, such as 6.7 nanometers or 6.8 nanometers).

儘管圖1將輻射源SO描繪為雷射產生電漿LPP源，但可使用任何合適源以產生EUV輻射。舉例而言，可藉由使用放電以將燃料(例如錫)轉換成電漿狀態來產生EUV發射電漿。此類型之輻射源可被稱作放電產生電漿(DPP)源。可由電源供應器產生放電，該電源供應器可形成輻射源之部件或可為經由電連接而連接至輻射源SO的單獨實體。Although FIG. 1 depicts the radiation source SO as a laser-producing plasma LPP source, any suitable source may be used to generate EUV radiation. For example, an EUV-emitting plasma can be generated by using a discharge to convert a fuel (such as tin) into a plasma state. This type of radiation source can be referred to as a discharge-generating plasma (DPP) source. The discharge may be generated by a power supply, which may form part of a radiation source or may be a separate entity connected to the radiation source SO via an electrical connection.

儘管可在本文中特定地參考在IC製造中微影裝置之使用，但應理解，本文中所描述之微影裝置可具有其他應用。可能之其他應用包括製造整合式光學系統、用於磁域記憶體之導引及偵測圖案、平板顯示器、液晶顯示器(LCD)、薄膜磁頭等。Although specific reference may be made herein to the use of lithographic devices in IC manufacturing, it should be understood that the lithographic devices described herein may have other applications. Possible other applications include manufacturing integrated optical systems, guidance and detection patterns for magnetic domain memory, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads, and the like.

儘管上文可特定地參考在光學微影之內容背景中對本發明之實施例之使用，但應瞭解，本發明可用於其他應用(例如壓印微影)中，且在內容背景允許之情況下不限於光學微影。在壓印微影中，圖案化器件中之構形(topography)界定產生於基板上之圖案。可將圖案化器件之構形壓入被供應至基板之抗蝕劑層中，在基板上，抗蝕劑係藉由施加電磁輻射、熱、壓力或其組合而固化。在抗蝕劑固化之後，將圖案化器件移出抗蝕劑，從而在其中留下圖案。Although specific reference may be made above to the use of embodiments of the present invention in the context of optical lithography, it should be understood that the present invention can be used in other applications, such as embossed lithography, and where the context allows Not limited to optical lithography. In embossing lithography, topography in a patterned device defines a pattern created on a substrate. The configuration of the patterned device may be pressed into a resist layer supplied to a substrate, and on the substrate, the resist is cured by applying electromagnetic radiation, heat, pressure, or a combination thereof. After the resist is cured, the patterned device is removed from the resist, leaving a pattern in it.

雖然上文已描述本發明之特定實施例，但應瞭解，可以與所描述方式不同之其他方式來實踐本發明。以上描述意欲為說明性，而非限制性的。因此，對於熟習此項技術者將顯而易見，可在不脫離下文所闡明之申請專利範圍及條項之範疇的情況下對所描述之本發明進行修改。 1. 一種用於一微影裝置中或搭配該微影裝置使用之光學薄膜，該薄膜包含： 一第一層，其包含一第一材料，及 一第二層，其包含一第二材料，該第一層配置於該第二層上， 其中該第一材料及該第二材料經選擇使得一空間電荷區或空乏區形成於該薄膜中，該空間電荷區或空乏區在該薄膜中誘發一電場。 2. 如條項1之薄膜，其中該第一材料及該第二材料經選擇使得該空間電荷區或空乏部延伸至全部該薄膜之一部分中。 3. 如條項1或2之薄膜，其中該第一材料及該第二材料係基於該第一材料及/或該第二材料之一或多個屬性予以選擇。 4. 如任一前述條項之薄膜，其中該電場在垂直於該第一層及/或該第二層之一方向上延伸。 5. 如任一前述條項之薄膜，其中該第一材料及該第二材料經選擇使得由該空間電荷區或空乏區誘發之該電場造成在該薄膜之輻照期間所產生的電荷載流子之一分離。 6. 如條項5之薄膜，其中該第一材料該二材料經選擇使得由該空間電荷區或空乏區誘發之該電場造成該等所產生之電荷載流子累積在該空間電荷區或空乏區之對置側上或附近。 7. 如條項5或6之薄膜，其中該等所產生之電荷載流子之該分離及/或累積誘發另一電場。 8. 如條項7之薄膜，其中該另一電場在平行於該第一層及/或該第二層之一方向上延伸。 9. 如條項7或8之薄膜，其中另一電場造成該等所產生之電荷載流子自輻照之該薄膜之一部分或區向外及/或遠離該部分或區移動。 10. 如條項7至9中任一項之薄膜，其中該另一電場造成該等所產生之電荷載流子朝向該薄膜之一周邊或周邊區域移動。 11. 如條項9或10中任一項之薄膜，其中該另一電場係使得該等所產生之電荷載流子以高於一輻射光束橫越該薄膜移動之一速度或速率的一速度或速率移動。 12. 如任一前述條項之薄膜，其中該第一材料及該第二材料中之至少一者包含一半導體材料。 13. 如任一前述條項之薄膜，其中該第一材料及該第二材料中之至少另一者包含一半導體材料及/或一金屬。 14. 如任一前述條項之薄膜，其中該等第一材料及該第二材料中之至少一者包含硼。 15. 如任一前述條項之薄膜，其中該第一材料及該第二材料中之至少另一者包含結晶矽、多晶矽、碳化矽、氮化矽及石墨烯中之至少一者。 16. 如任一條項之薄膜，其中該第一材料包含一第一半導體材料且該第二材料包含一第二半導體材料，該第一半導體材料與該第二半導體材料係相同的或不同的。 17. 如任一前述條項之薄膜，其中該第一材料及該第二材料中之至少一者經負摻雜及/或該第一材料及該第二材料中之至少另一者經正摻雜。 18. 如任一前述條項之薄膜，其中該薄膜包含一電極，該電極經組態以允許將一電壓施加至該薄膜。 19. 如條項18之薄膜，其中該電極經配置於該薄膜上使得該電壓誘發在垂直於該第一層及/或該第二層之一方向上延伸的一又一電場。 20. 如任一前述條項之薄膜，其中該薄膜包含一第三層，該第三層包含一第三材料。 21. 如條項20之薄膜，其中該第三材料包含一金屬，諸如鋯、鉬及/或釕。 22. 如任一前述條項之薄膜，其中該第一材料及該第二材料中之至少一者包含一螢光摻雜劑。 23. 一種製造用於一微影裝置中或搭配該微影裝置使用之一光學薄膜之方法，該方法包含： 形成包含一第一材料之一第一層，及 形成或提供包含一第二材料之一第二層，該第一層形成於該第二層上； 其中該第一材料及該第二材料經選擇使得一空間電荷區或空乏區形成於該薄膜中，該空間電荷區或空乏區在該薄膜中誘發一電場。 24. 一種用於一微影裝置中或搭配該微影裝置使用之光學薄膜，該薄膜包含一半導體材料，該半導體材料包含一摻雜材料，其中該摻雜材料之一濃度經選擇使得在該薄膜中誘發一電場。 25. 如條項24之薄膜，其中該摻雜材料之該濃度在該半導體材料中係非均一的及/或界定該半導體材料中之一摻雜梯度。 26. 如條項24或25之薄膜，其中該薄膜之一第一部分或側包含一第一濃度之該摻雜材料且該薄膜之一第二部分或側包含一第二濃度之該摻雜材料，其中該摻雜材料之該第一濃度高於該摻雜材料之該第二濃度。 27. 如條項24至26中任一項之薄膜，其中該摻雜材料之該濃度經選擇為在該半導體材料中在1022 cm- 3 與1014 cm- 3 之間變化。 28. 如條項24至27中任一項之薄膜，其中該摻雜材料之該濃度經選擇使得該誘發之電場約為或大於107 V/m。 29. 如條項24至28中任一項之薄膜，其中該摻雜材料之該濃度經選擇使得該誘發之電場造成在運用輻射來輻照該薄膜期間所產生的電荷載流子之一分離。 30. 如條項24至29中任一項之薄膜，其中該摻雜材料之該濃度經選擇使得該誘發之電場造成該等所產生之電荷載流子累積在薄膜之對置側上或附近。 31. 如條項29或30之薄膜，其中該等所產生之電荷載流子之該分離及/或累積誘發另一電場。 32. 如條項24至31中任一項之薄膜，其中該半導體材料包含結晶矽、多晶矽、碳化矽、氮化矽、石墨烯及三五族化合物半導體中之至少一者中之至少一者。 33. 如條項24至32中任一項之薄膜，其中該摻雜材料包含硼、砷、銻及磷中之至少一者。 34. 一種製造用於一微影裝置中或搭配該微影裝置使用之一光學薄膜之方法，該方法包含： 形成或提供一半導體材料；及 運用一摻雜材料摻雜該半導體材料； 其中該摻雜材料之一濃度經選擇使得在該薄膜中誘發一電場。 35. 一種用於減小一光學薄膜之加熱之系統，該系統包含： 一如條項1至22或條項24至33中任一項之光學薄膜；其中該系統經組態以用於自該薄膜移除電荷載流子，該等電荷載流子係在該薄膜之輻照期間產生。 36. 如條項35之系統，其中該系統經組態以用於自該薄膜之一或多個周邊部分或一周邊移除該等所產生之電荷載流子。 37. 如條項35或36之系統，其中該系統經組態以提供用於該等所產生之電荷載流子之一槽。 38. 如條項35至37中任一項之系統，其中該系統經組態以使該光學薄膜短路。 39. 如條項35至38中任一項之系統，其中該薄膜之一第一部分或側連接至該薄膜之一第二部分或側。 40. 如條項39之系統，其中該等第一側及/或第二周邊側或部分電接地。 41. 如條項38或39之系統，其中該薄膜之該第一部分或側在該薄膜之一周邊處或附近連接至該薄膜之該第二部分或側。 42. 如條項35至41中任一項之系統，其中該系統包含一負載件，該負荷件連接至該薄膜。 43. 如條項42之系統，其中該負載件之一電阻係基於該薄膜之至少另一屬性予以選擇，該至少另一屬性包含該薄膜之一薄層電阻。 44. 如條項43之系統，其中該負載件之該電阻經選擇為匹配於該薄膜之該薄層電阻。 45. 一種供搭配一微影裝置使用之圖案化器件總成，該總成包含： 一圖案化器件；及 一表膜，其包含一如條項1至22或條項24至33中任一項之光學薄膜或一如條項35至44中任一項的用於減小一光學薄膜之加熱之系統。 46. 一種微影裝置，其包含： 一照明系統，其經組態以調節一輻射光束； 一支撐結構，其經建構以支撐一圖案化器件，該圖案化器件能夠在該輻射光束之橫截面中向該輻射光束賦予一圖案以形成一經圖案化輻射光束； 一基板台，其經建構以固持一基板； 一投影系統，其經組態以將該經圖案化輻射光束投影至該基板上；及 一如條項1至22或條項24至33中任一項之光學薄膜，該薄膜鄰近於該基板台配置；或 一如條項35至44中任一項的用於減小一光學薄膜之加熱之系統。 47. 如條項46之裝置，其包含一碎屑減輕器件，該碎屑減輕器件經組態以將一氣流導向朝向該基板，該薄膜為該碎屑減輕器件之部分或包含於該碎屑減輕器件中。 48. 一種方法，其包含將一經圖案化輻射光束投影至一基板上，其中該輻射光束傳遞通過一如條項1至22或條項24至33中任一項之光學薄膜。 49. 一種如條項1至22或條項24至33中任一項之光學薄膜在一微影裝置中或搭配該微影裝置的用途。Although specific embodiments of the invention have been described above, it should be understood that the invention may be practiced in other ways than described. The above description is intended to be illustrative, and not restrictive. Therefore, it will be apparent to those skilled in the art that modifications can be made to the invention as described without departing from the scope and scope of the patent applications set forth below. 1. An optical film for use in or in conjunction with a lithographic device, the film comprising: a first layer including a first material, and a second layer including a second material, The first layer is disposed on the second layer, wherein the first material and the second material are selected such that a space charge region or an empty region is formed in the film, and the space charge region or the empty region is induced in the film. An electric field. 2. The film of item 1, wherein the first material and the second material are selected such that the space charge region or the empty portion extends into a portion of all of the film. 3. The film of clause 1 or 2, wherein the first material and the second material are selected based on one or more attributes of the first material and / or the second material. 4. The film of any of the preceding clauses, wherein the electric field extends in a direction perpendicular to one of the first layer and / or the second layer. 5. The film according to any of the preceding clauses, wherein the first material and the second material are selected such that the electric field induced by the space charge region or the empty region causes a charge carrier generated during the irradiation of the film One of the children separated. 6. The film of item 5, wherein the first material and the two materials are selected such that the electric field induced by the space charge region or the empty region causes the generated charge carriers to accumulate in the space charge region or the empty region. On or near the opposite side of the zone. 7. The film of clause 5 or 6, wherein the separation and / or accumulation of these generated charge carriers induces another electric field. 8. The film of clause 7, wherein the other electric field extends in a direction parallel to one of the first layer and / or the second layer. 9. The film of clause 7 or 8, wherein another electric field causes the generated charge carriers to move outward and / or away from a portion or region of the film irradiated. 10. The thin film of any one of clauses 7 to 9, wherein the other electric field causes the generated charge carriers to move toward a periphery or a peripheral region of the thin film. 11. The film of any one of clauses 9 or 10, wherein the other electric field is such that the generated charge carriers move at a speed higher than a speed or rate at which a radiation beam moves across the film Or rate of movement. 12. The film according to any one of the preceding clauses, wherein at least one of the first material and the second material comprises a semiconductor material. 13. The film according to any one of the preceding clauses, wherein at least one of the first material and the second material comprises a semiconductor material and / or a metal. 14. The film of any of the preceding clauses, wherein at least one of the first material and the second material comprises boron. 15. The thin film of any preceding clause, wherein at least one of the first material and the second material comprises at least one of crystalline silicon, polycrystalline silicon, silicon carbide, silicon nitride, and graphene. 16. The film of any one of the preceding clauses, wherein the first material comprises a first semiconductor material and the second material comprises a second semiconductor material, the first semiconductor material and the second semiconductor material are the same or different. 17. The film according to any of the preceding clauses, wherein at least one of the first material and the second material is negatively doped and / or at least one of the first material and the second material is positively Doped. 18. The film of any of the preceding clauses, wherein the film includes an electrode configured to allow a voltage to be applied to the film. 19. The film of clause 18, wherein the electrode is configured on the film such that the voltage induces a further electric field extending in a direction perpendicular to one of the first layer and / or the second layer. 20. The film of any of the preceding clauses, wherein the film comprises a third layer and the third layer comprises a third material. 21. The film of clause 20, wherein the third material comprises a metal, such as zirconium, molybdenum, and / or ruthenium. 22. The film of any of the preceding clauses, wherein at least one of the first material and the second material comprises a fluorescent dopant. 23. A method of manufacturing an optical film for use in or in conjunction with a lithographic device, the method comprising: forming a first layer comprising a first material, and forming or providing a second material comprising A second layer, the first layer being formed on the second layer; wherein the first material and the second material are selected such that a space charge region or empty region is formed in the film, and the space charge region or empty region is formed The region induces an electric field in the film. 24. An optical film for use in or in conjunction with a lithographic device, the film comprising a semiconductor material comprising a doping material, wherein a concentration of the doping material is selected such that An electric field is induced in the film. 25. The thin film of clause 24, wherein the concentration of the doping material is non-uniform in the semiconductor material and / or defines a doping gradient in the semiconductor material. 26. The thin film of clause 24 or 25, wherein a first portion or side of the film contains a first concentration of the doping material and a second portion or side of the film contains a second concentration of the doping material Wherein the first concentration of the doping material is higher than the second concentration of the doping material. 27. The thin film of any one of clauses 24 to 26, wherein the concentration of the doping material is selected to vary between 10 22 cm - 3 and 10 14 cm - 3 in the semiconductor material. 28. The thin film of any one of clauses 24 to 27, wherein the concentration of the doping material is selected so that the induced electric field is about or greater than 10 7 V / m. 29. The film of any of clauses 24 to 28, wherein the concentration of the doping material is selected such that the induced electric field causes separation of one of the charge carriers generated during the irradiation of the film with radiation . 30. The thin film of any one of clauses 24 to 29, wherein the concentration of the doped material is selected such that the induced electric field causes the generated charge carriers to accumulate on or near opposite sides of the thin film . 31. The film of clause 29 or 30, wherein the separation and / or accumulation of the generated charge carriers induces another electric field. 32. The thin film of any one of clauses 24 to 31, wherein the semiconductor material comprises at least one of at least one of crystalline silicon, polycrystalline silicon, silicon carbide, silicon nitride, graphene, and a group three or five compound semiconductor . 33. The thin film of any one of clauses 24 to 32, wherein the doping material comprises at least one of boron, arsenic, antimony, and phosphorus. 34. A method of manufacturing an optical film for use in or in conjunction with a lithographic device, the method comprising: forming or providing a semiconductor material; and doping the semiconductor material with a doping material; wherein the semiconductor material A concentration of the doping material is selected such that an electric field is induced in the film. 35. A system for reducing the heating of an optical film, the system comprising: an optical film as in any of clauses 1 to 22 or clauses 24 to 33; wherein the system is configured for The film removes charge carriers, which are generated during the irradiation of the film. 36. The system of clause 35, wherein the system is configured to remove the generated charge carriers from one or more peripheral portions or a periphery of the film. 37. The system of clause 35 or 36, wherein the system is configured to provide a slot for the generated charge carriers. 38. The system of any one of clauses 35 to 37, wherein the system is configured to short the optical film. 39. The system of any one of clauses 35 to 38, wherein a first portion or side of the film is connected to a second portion or side of the film. 40. The system of clause 39, wherein the first side and / or the second peripheral side or part is electrically grounded. 41. The system of clause 38 or 39, wherein the first portion or side of the film is connected to the second portion or side of the film at or near a periphery of the film. 42. The system of any one of clauses 35 to 41, wherein the system includes a load member connected to the film. 43. The system of clause 42, wherein one of the resistances of the load is selected based on at least one other property of the film, the at least another property includes a sheet resistance of the film. 44. The system of clause 43, wherein the resistance of the load is selected to match the sheet resistance of the film. 45. A patterned device assembly for use with a lithographic device, the assembly comprising: a patterned device; and a surface film including any one of items 1 to 22 or items 24 to 33 Item of an optical film or a system for reducing the heating of an optical film as in any one of items 35 to 44. 46. A lithography device comprising: an illumination system configured to regulate a radiation beam; a support structure configured to support a patterned device capable of forming a cross section of the radiation beam A pattern is imparted to the radiation beam to form a patterned radiation beam; a substrate stage configured to hold a substrate; a projection system configured to project the patterned radiation beam onto the substrate; And an optical film according to any one of items 1 to 22 or 24 to 33, the film being disposed adjacent to the substrate table; or an optical film according to any one of items 35 to 44, for Film heating system. 47. The device of clause 46, comprising a debris reduction device configured to direct an airflow toward the substrate, the film being part of or contained in the debris reduction device Lighten the device. 48. A method comprising projecting a patterned radiation beam onto a substrate, wherein the radiation beam is passed through an optical film such as any of clauses 1 to 22 or clauses 24 to 33. 49. The use of an optical film according to any one of clauses 1 to 22 or clauses 24 to 33 in or in combination with a lithographic apparatus.

1‧‧‧雷射1‧‧‧laser

2‧‧‧雷射光束2‧‧‧laser beam

3‧‧‧燃料發射器3‧‧‧ Fuel Launcher

4‧‧‧電漿形成區4‧‧‧ Plasma formation area

5‧‧‧近正入射輻射收集器5‧‧‧Near normal incidence radiation collector

6‧‧‧中間焦點/點6‧‧‧ intermediate focus / point

7‧‧‧電漿7‧‧‧ Plasma

8‧‧‧開口8‧‧‧ opening

9‧‧‧圍封結構9‧‧‧ enclosure structure

10‧‧‧琢面化場鏡面器件10‧‧‧ Faceted Field Mirror Device

11‧‧‧琢面化光瞳鏡面器件11‧‧‧ Faceted pupil mirror device

15‧‧‧碎屑減輕器件15‧‧‧ Debris Reduction Device

16‧‧‧光學薄膜16‧‧‧ Optical Film

16a‧‧‧頂部部分或側/第一側或部分16a‧‧‧Top part or side / First side or part

16b‧‧‧底部部分或側/第二側或部分16b‧‧‧ bottom part or side / second side or part

16c‧‧‧周邊/周邊部分16c‧‧‧Peripheral / peripheral

18‧‧‧第一層18‧‧‧ first floor

19‧‧‧界面區或系統19‧‧‧ interface area or system

19a‧‧‧帶正電荷側19a‧‧‧Positively charged side

19b‧‧‧帶負電荷側19b‧‧‧ side with negative charge

20‧‧‧第二層20‧‧‧Second floor

22‧‧‧空間電荷區或空乏區22‧‧‧ space charge region or empty region

22a‧‧‧側/頂面22a‧‧‧side / top

22b‧‧‧側/地面22b‧‧‧side / ground

23‧‧‧界面23‧‧‧ interface

24‧‧‧電荷載流子/電子-電洞對/帶電載流子24‧‧‧ charge carriers / electron-hole pairs / charged carriers

24a‧‧‧電荷載流子/電子24a‧‧‧ charge carriers / electrons

24b‧‧‧電荷載流子/電洞24b‧‧‧ charge carriers / holes

26‧‧‧照明體積26‧‧‧lighting volume

28‧‧‧貢獻28‧‧‧Contribution

28a‧‧‧在電場不存在的情況下之熱源之貢獻/第一罩蓋層28a‧‧‧Contribution of heat source in the absence of electric field / first cover

28b‧‧‧在電場存在於光學薄膜中的情況下之熱源之貢獻/第二罩蓋層28b‧‧‧Contribution of heat source in the presence of an electric field in the optical film / second cover layer

30‧‧‧散熱片之貢獻30‧‧‧ Contribution of heat sink

32‧‧‧體積32‧‧‧ volume

34‧‧‧電極34‧‧‧electrode

36‧‧‧第三層36‧‧‧ Third floor

40‧‧‧第四層40‧‧‧Fourth floor

42‧‧‧電子42‧‧‧Electronics

44‧‧‧系統44‧‧‧System

45‧‧‧導電元件45‧‧‧ conductive element

46‧‧‧槽46‧‧‧slot

B‧‧‧經圖案化輻射光束B‧‧‧ patterned radiation beam

C1‧‧‧電容器C 1 ‧‧‧Capacitor

C2‧‧‧電容器C 2 ‧‧‧Capacitor

C3‧‧‧電容器C 3 ‧‧‧Capacitor

CN‧‧‧電容器C N ‧‧‧Capacitor

D1‧‧‧在電場不存在的情況下之熱源之貢獻與散熱片之貢獻之間的差D1‧‧‧ The difference between the contribution of the heat source and the contribution of the heat sink in the absence of an electric field

D2‧‧‧在電場存在的情況下之熱源之貢獻與散熱片之貢獻之間的差D2‧‧‧ The difference between the contribution of the heat source and the contribution of the heat sink in the presence of an electric field

E‧‧‧電場E‧‧‧ Electric field

IL‧‧‧照明系統IL‧‧‧Lighting System

LA‧‧‧微影裝置LA‧‧‧lithography device

M‧‧‧電荷載流子之移動M‧‧‧ charge carrier movement

MA‧‧‧圖案化器件MA‧‧‧ Patterned Device

MR‧‧‧經量測之響應度MR‧‧‧Measured response

MT‧‧‧支撐結構MT‧‧‧ support structure

P‧‧‧光電二極體P‧‧‧Photodiode

PA‧‧‧圖案化器件總成PA‧‧‧Patterned device assembly

PL‧‧‧表膜PL‧‧‧ surface film

PS‧‧‧投影系統PS‧‧‧ projection system

RL‧‧‧電阻性元件R L ‧‧‧ Resistive element

RS‧‧‧串聯電阻器/薄層電阻器R S ‧‧‧series resistor / thin layer resistor

RSh‧‧‧分路電阻器R Sh ‧‧‧ Shunt Resistor

SO‧‧‧輻射源SO‧‧‧ radiation source

TR‧‧‧理論響應度TR‧‧‧Theoretical response

W‧‧‧基板W‧‧‧ substrate

WT‧‧‧基板台WT‧‧‧ Substrate

現在將僅作為實例參看隨附示意性圖式來描述本發明之實施例，在該等圖式中： - 圖1描繪根據本發明之一實施例的包含微影裝置及輻射源之微影系統； - 圖2描繪根據本發明之一實施例之光學薄膜； - 圖3A描繪在輻照光學薄膜之前的圖2之光學薄膜； - 圖3B描繪圖3A之光學薄膜中之一或多個散熱片及一或多個熱源之分佈的曲線圖； - 圖4A描繪在輻照期間之圖3A之光學薄膜； - 圖4B描繪圖4A之光學薄膜中之一或多個散熱片及一或多個熱源之分佈的曲線圖； - 圖5A描繪在輻照期間之圖4A之光學薄膜，其中在該光學薄膜中誘發電場； - 圖5B描繪圖5A之光學薄膜中之一或多個散熱片及一或多個熱源之分佈的曲線圖； - 圖6描繪在輻照期間之圖5A之光學薄膜，其中在該光學薄膜中誘發另一電場； - 圖7A描繪在輻照期間之圖6之光學薄膜，其中另一電場造成電荷載流子在光學薄膜中散佈； - 圖7B描繪圖7A之光學薄膜中之一或多個散熱片及一或多個熱源之分佈的曲線圖； - 圖8A及圖8B描繪供搭配圖1之微影裝置使用或用於圖1之微影裝置中的例示性光學薄膜； - 圖8C描繪圖8A及圖8B之光學薄膜中之電荷密度及電場強度之分佈； - 圖9描繪相對於光電二極體之波長之響應度的曲線圖，該光電二極體包含圖8A及圖8B之光學薄膜之第一層及第二層； - 圖10描繪供搭配圖1之微影裝置使用或用於圖1之微影裝置中的另一例示性光學薄膜之俯視圖； - 圖11描繪供搭配圖1之微影裝置使用或用於圖1之微影裝置中的另一例示性光學薄膜； - 圖12描繪供搭配圖1之微影裝置使用或用於圖1之微影裝置中的另一例示性光學薄膜； - 圖13描繪供搭配圖1之微影裝置使用或用於圖1之微影裝置中的另一例示性光學薄膜； - 圖14描繪供搭配圖1之微影裝置使用或用於圖1之微影裝置中的另一例示性光學薄膜； - 圖15描繪根據本發明之另一實施例的包含微影裝置及輻射源之微影系統； - 圖16A描繪供搭配圖1或圖15之微影裝置使用或用於圖1或圖15之微影裝置中的另一例示性光學薄膜； - 圖16B描繪依賴於圖16A之光學薄膜之厚度x 的供體原子濃度ND 之例示性曲線圖； - 圖16C描繪在輻照之前之圖16A之光學薄膜； - 圖17A至圖17C描繪在輻照期間之圖16A之光學薄膜； - 圖18A描繪根據本發明之一實施例的用於減小光學薄膜之加熱的系統； - 圖18B描繪圖18A之光學薄膜之分散式電學模型； - 圖19A描繪用於減小光學薄膜之加熱的另一例示性系統；及 - 圖19B描繪圖19A之光學薄膜之分散式電學模型。Embodiments of the invention will now be described by way of example only with reference to the accompanying schematic drawings, in which:-FIG. 1 depicts a lithography system including a lithography device and a radiation source according to one embodiment of the invention -Figure 2 depicts an optical film according to an embodiment of the invention;-Figure 3A depicts the optical film of Figure 2 before irradiating the optical film;-Figure 3B depicts one or more heat sinks of the optical film of Figure 3A And a graph of the distribution of one or more heat sources;-Figure 4A depicts the optical film of Figure 3A during irradiation;-Figure 4B depicts one or more heat sinks and one or more heat sources in the optical film of Figure 4A 5A depicts the optical film of FIG. 4A during irradiation, in which an electric field is induced in the optical film; FIG. 5B depicts one or more heat sinks and one or more of the optical film of FIG. 5A Graph of the distribution of multiple heat sources;-Fig. 6 depicts the optical film of Fig. 5A during irradiation, wherein another electric field is induced in the optical film;-Fig. 7A depicts the optical film of Fig. 6 during irradiation, Where the other electric field causes charge carriers in the optical Scattered in the film;-FIG. 7B depicts a graph of the distribution of one or more heat sinks and one or more heat sources in the optical film of FIG. 7A; An exemplary optical film used in the lithographic apparatus of FIG. 1;-FIG. 8C depicts the distribution of charge density and electric field strength in the optical films of FIGS. 8A and 8B;-FIG. 9 depicts the wavelength relative to the wavelength of the photodiode Responsivity curve graph, the photodiode includes the first and second layers of the optical film of FIGS. 8A and 8B;-FIG. 10 depicts the photolithography device used with FIG. 1 or the photolithography of FIG. 1 Top view of another exemplary optical film in the device;-FIG. 11 depicts another exemplary optical film for use with or in the lithographic device of FIG. 1;-FIG. 12 depicts a paired view 1 is another exemplary optical film used or used in the lithographic device of FIG. 1;-FIG. 13 depicts another lithographic device used in or with the lithographic device of FIG. 1 Exemplary optical films;-Figure 14 depicts for use with the lithographic apparatus of Figure 1 or for Figure 1 Another exemplary optical film in a lithographic apparatus;-FIG. 15 depicts a lithographic system including a lithographic apparatus and a radiation source according to another embodiment of the present invention;-FIG. 16A depicts a microlithography system for use with FIG. 1 or FIG. 15 Movies apparatus used or to another exemplary optical film lithography apparatus of FIG. 1 or FIG. 15 of the; - FIG. 16B depicts an exemplary graph depends on the thickness of the optical film of FIG 16A of x atomic concentration donor N D of -Figure 16C depicts the optical film of Figure 16A before irradiation;-Figures 17A to 17C depict the optical film of Figure 16A during irradiation;-Figure 18A depicts a method for reducing System for heating optical film;-Figure 18B depicts a decentralized electrical model of the optical film of Figure 18A;-Figure 19A depicts another exemplary system for reducing heating of an optical film; and-Figure 19B depicts the optics of Figure 19A Decentralized electrical model of a thin film.

Claims (24)

一種用於一微影裝置中或搭配該微影裝置使用之光學薄膜，該薄膜包含： 一第一層，其包含一第一材料，及 一第二層，其包含一第二材料，該第一層配置於該第二層上， 其中該第一材料及該第二材料經選擇使得一空間電荷區或空乏區形成於該薄膜中，該空間電荷區或空乏區在該薄膜中誘發一電場。An optical film for use in or in conjunction with a lithographic device, the film comprising: a first layer containing a first material, and a second layer containing a second material, the first One layer is disposed on the second layer, wherein the first material and the second material are selected such that a space charge region or empty region is formed in the film, and the space charge region or empty region induces an electric field in the film. . 如請求項1之薄膜，其中該第一材料及該第二材料經選擇使得該空間電荷區或空乏部延伸至全部該薄膜之一部分中。For example, the film of claim 1, wherein the first material and the second material are selected so that the space charge region or the empty portion extends into a portion of the film. 如請求項1或2之薄膜，其中該電場在垂直於該第一層及/或該第二層之一方向上延伸。The film of claim 1 or 2, wherein the electric field extends in a direction perpendicular to one of the first layer and / or the second layer. 如請求項1或2之薄膜，其中該第一材料及該第二材料經選擇使得由該空間電荷區或空乏區誘發之該電場造成在該薄膜之輻照期間所產生的電荷載流子之一分離。If the film of claim 1 or 2, wherein the first material and the second material are selected such that the electric field induced by the space charge region or the empty region causes the charge carriers generated during the irradiation of the film to One separation. 如請求項4之薄膜，其中該第一材料及該第二材料經選擇使得由該空間電荷區或空乏區誘發之該電場造成該等所產生之電荷載流子累積在該空間電荷區或空乏區之對置側上或附近。The thin film of claim 4, wherein the first material and the second material are selected such that the electric field induced by the space charge region or empty region causes the generated charge carriers to accumulate in the space charge region or empty On or near the opposite side of the zone. 如請求項4之薄膜，其中該等所產生之電荷載流子之該分離及/或累積誘發另一電場。A thin film as claimed in claim 4, wherein this separation and / or accumulation of the generated charge carriers induces another electric field. 如請求項6之薄膜，其中該另一電場在平行於該第一層及/或該第二層之一方向上延伸。The film of claim 6, wherein the other electric field extends in a direction parallel to one of the first layer and / or the second layer. 如請求項6之薄膜，其中另一電場造成該等所產生之電荷載流子自輻照之該薄膜之一部分或區向外及/或遠離該部分或區移動。If the film of claim 6, wherein another electric field causes the generated charge carriers to move outward and / or away from a portion or region of the film irradiated. 如請求項6之薄膜，其中該另一電場造成該等所產生之電荷載流子朝向該薄膜之一周邊或周邊區域移動。The thin film of claim 6, wherein the another electric field causes the generated charge carriers to move toward a periphery or a peripheral region of the thin film. 如請求項8之薄膜，其中該另一電場係使得該等所產生之電荷載流子以高於一輻射光束橫越該薄膜移動之一速度或速率的一速度或速率移動。The film of claim 8, wherein the another electric field causes the generated charge carriers to move at a speed or rate higher than a speed or rate at which a radiation beam moves across the film. 如請求項1或2之薄膜，其中該第一材料及該第二材料中之至少一者包含一半導體材料。The film of claim 1 or 2, wherein at least one of the first material and the second material comprises a semiconductor material. 如請求項1或2之薄膜，其中該第一材料及該第二材料中之至少另一者包含一半導體材料及/或一金屬。The thin film of claim 1 or 2, wherein at least one of the first material and the second material comprises a semiconductor material and / or a metal. 一種用於一微影裝置中或搭配該微影裝置使用之光學薄膜，該薄膜包含一半導體材料，該半導體材料包含一摻雜材料，其中該摻雜材料之一濃度經選擇使得在該薄膜中誘發一電場。An optical film for use in or in conjunction with a lithographic device, the film comprising a semiconductor material, the semiconductor material comprising a doping material, wherein a concentration of the doping material is selected such that in the film Inducing an electric field. 如請求項13之薄膜，其中該摻雜材料之該濃度在該半導體材料中係非均一的及/或界定該半導體材料中之一摻雜梯度。The thin film of claim 13, wherein the concentration of the doping material is non-uniform in the semiconductor material and / or defines a doping gradient in the semiconductor material. 如請求項13至14中任一項之薄膜，其中該摻雜材料之該濃度經選擇為在該半導體材料中在1022 cm- 3 與1014 cm- 3 之間變化。The thin film of any one of claims 13 to 14, wherein the concentration of the doping material is selected to vary between 10 22 cm - 3 and 10 14 cm - 3 in the semiconductor material. 如請求項13至14中任一項之薄膜，其中該摻雜材料之該濃度經選擇使得該誘發之電場約為或大於107 V/m。The thin film of any one of claims 13 to 14, wherein the concentration of the doping material is selected such that the induced electric field is about or greater than 10 7 V / m. 如請求項13至14中任一項之薄膜，其中該摻雜材料之該濃度經選擇使得該誘發之電場造成在運用輻射來輻照該薄膜期間所產生的電荷載流子之一分離。The film of any one of claims 13 to 14, wherein the concentration of the doping material is selected such that the induced electric field causes separation of one of the charge carriers generated during the irradiation of the film with radiation. 如請求項13至14中任一項之薄膜，其中該摻雜材料之該濃度經選擇使得該誘發之電場造成該等所產生之電荷載流子累積在薄膜之對置側上或附近。The thin film of any one of claims 13 to 14, wherein the concentration of the doping material is selected such that the induced electric field causes the generated charge carriers to accumulate on or near opposite sides of the thin film. 如請求項17之薄膜，其中該等所產生之電荷載流子之該分離及/或累積誘發另一電場。A thin film as claimed in claim 17, wherein this separation and / or accumulation of the generated charge carriers induces another electric field. 一種用於減小一光學薄膜之加熱之系統，該系統包含： 一如請求項1至19中任一項之光學薄膜；其中該系統經組態以用於自該薄膜移除電荷載流子，該等電荷載流子係在該薄膜之輻照期間產生。A system for reducing the heating of an optical film, the system comprising: an optical film as in any one of claims 1 to 19; wherein the system is configured to remove charge carriers from the film The charge carriers are generated during the irradiation of the film. 一種供搭配一微影裝置使用之圖案化器件總成，該總成包含： 一圖案化器件；及 一表膜，其包含一如請求項1至19中任一項之光學薄膜或一如請求項20之用於減小一光學薄膜之加熱的系統。A patterned device assembly for use with a lithographic device, the assembly comprising: a patterned device; and a surface film comprising an optical film as in any one of claims 1 to 19 or as requested Item 20 is a system for reducing the heating of an optical film. 一種如請求項1至19中任一項之光學薄膜或一種如請求項20之用於減小一光學薄膜之加熱的系統在一微影裝置中或搭配該微影裝置的用途。Use of an optical film according to any one of claims 1 to 19 or a system for reducing the heating of an optical film according to claim 20 in or in conjunction with a lithographic apparatus. 一種製造用於一微影裝置中或搭配該微影裝置使用之一光學薄膜之方法，該方法包含： 形成包含一第一材料之一第一層，及 形成或提供包含一第二材料之一第二層，該第一層形成於該第二層上； 其中該第一材料及該第二材料經選擇使得一空間電荷區或空乏區形成於該薄膜中，該空間電荷區或空乏區在該薄膜中誘發一電場。A method of manufacturing an optical film for use in or in conjunction with a lithographic device, the method comprising: forming a first layer including a first material, and forming or providing one including a second material A second layer, the first layer being formed on the second layer; wherein the first material and the second material are selected such that a space charge region or empty region is formed in the thin film, and the space charge region or empty region is An electric field is induced in the film. 一種製造用於一微影裝置中或搭配該微影裝置使用之一光學薄膜之方法，該方法包含： 形成或提供一半導體材料；及 運用一摻雜材料摻雜該半導體材料； 其中該摻雜材料之一濃度經選擇使得在該薄膜中誘發一電場。A method of manufacturing an optical film for use in or in conjunction with a lithographic device, the method comprising: forming or providing a semiconductor material; and doping the semiconductor material with a doping material; wherein the doping One concentration of the material is selected such that an electric field is induced in the film.
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NL2023116A (en) 2019-05-20
WO2019015905A1 (en) 2019-01-24
KR20200026902A (en) 2020-03-11
CN110945432A (en) 2020-03-31
NL2021155A (en) 2019-01-28
NL2021155B1 (en) 2019-05-20
NL2023116B1 (en) 2020-02-20

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