TW201843523A - Photomask for use in manufacturing a display device and method of manufacturing a display device - Google Patents
Photomask for use in manufacturing a display device and method of manufacturing a display device Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 72
- 230000010363 phase shift Effects 0.000 claims abstract description 79
- 238000012546 transfer Methods 0.000 claims abstract description 71
- 238000002834 transmittance Methods 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000005540 biological transmission Effects 0.000 claims description 28
- 230000002950 deficient Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 14
- 239000010408 film Substances 0.000 description 143
- 230000007547 defect Effects 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 239000000463 material Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 230000005484 gravity Effects 0.000 description 8
- 238000004088 simulation Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 238000013041 optical simulation Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
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- 230000010354 integration Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
本發明係關於一種用以製造電子器件之光罩，尤其關於一種適於製造顯示裝置(平板顯示器：FPD)時使用之光罩。The present invention relates to a photomask used for manufacturing electronic devices, and more particularly to a photomask suitable for use in manufacturing a display device (flat panel display: FPD).
於專利文獻1中記載有一種適合顯示裝置製造用遮罩之曝光環境，可穩定地轉印微細之圖案之光罩。 又，於專利文獻2中記載有一種用以對於用於半導體積體電路裝置之製造之微細圖案形成用光罩，使孤立圖案與密集圖案同時微細化之方法。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2016-024264號公報 [專利文獻2]日本專利特開2006-338057號公報Patent Document 1 describes a photomask suitable for an exposure environment of a mask for manufacturing a display device and capable of stably transferring a fine pattern. Further, Patent Document 2 describes a method for simultaneously miniaturizing an isolated pattern and a dense pattern for a mask for forming a fine pattern used in the manufacture of a semiconductor integrated circuit device. [Prior Art Literature] [Patent Literature] [Patent Literature 1] Japanese Patent Laid-Open No. 2016-024264 [Patent Literature 2] Japanese Patent Laid-Open No. 2006-338057
[發明所欲解決之問題] 於包含液晶顯示裝置(liquid crystal display)或有機電致發光(EL，Organic Electroluminescence)顯示裝置等之顯示裝置中，期望更明亮且省電並且高清晰度、高速顯示、寬視野角等顯示性能之提昇。 例如，就用於上述顯示裝置之薄膜電晶體(Thin Film Transistor：TFT)而言，構成TFT之複數個圖案中之形成於層間絕緣膜之接觸孔必須具有確實地使上層及下層之圖案連接之作用，才能保證正確之動作。另一方面，伴隨著例如為了極力地增大液晶顯示裝置之開口率，製成明亮且省電之顯示裝置而要求接觸孔之直徑充分小等顯示裝置之高密度化要求，期望孔圖案之直徑亦微細化(例如未達3 μm)。例如，認為需要直徑為0.8 μm以上且2.5 μm以下、進而直徑為2.0 μm以下之孔圖案，具體而言，亦期望形成具有0.8～1.8 μm之直徑之圖案。 然而，於較顯示裝置積體度更高且圖案之微細化更顯著進展之半導體裝置(LSI)製造用光罩之領域，存在為獲得較高之解像性，而於曝光裝置中適用較高之數值孔徑NA(例如超過0.2)之光學系統，推進曝光之光之短波長化之境況。其結果，於該領域中，普遍使用KrF或ArF之準分子雷射(分別為248 nm、193 nm之單一波長)。 另一方面，於顯示裝置製造用微影領域，通常不會為了提高解像性而適用如上所述之手法。例如，該領域中使用之曝光裝置所具有之光學系統之NA(數值孔徑)為0.08～0.12左右，展望今後亦處於適用0.20以下、例如0.08～0.15左右之環境。又，曝光光源亦普遍使用i線、h線、或g線，且藉由使用主要包含其等之寬波長光源，而獲得用以照射大面積之光量，重視生產效率或成本之傾向較強。 又，於顯示裝置之製造中，亦如上所述，圖案之微細化要求提高。此處，將半導體裝置製造用技術直接適用於顯示裝置之製造存在若干個問題。例如，向具有高NA(數值孔徑)之高解像度之曝光裝置之轉換需要較大之設備投資，從而無法獲得與顯示裝置之價格之匹配性。又，對於曝光波長之變更(以單一波長使用如ArF準分子雷射之短波長)，若適用於具有大面積之顯示裝置，則於不僅生產效率降低，而且需要相當之設備投資之方面不合適。亦即，追求先前不存在之圖案之微細化，另一方面不可喪失作為既有之優點之成本或效率之方面成為顯示裝置製造用光罩之問題點。 本發明者提出一種光罩，該光罩具有：主圖案，其包含透光部；輔助圖案，其配置於該主圖案之附近，且包含使特定波長之光相位偏移之相位偏移部；及低透光部，其形成於該等主圖案及輔助圖案以外之區域(專利文獻1)。該光罩可於在顯示面板基板等被轉印體上穩定地形成微細之孤立孔時有利地使用。 另一方面，隨著顯示裝置之構成變得更複雜，轉印用圖案之設計亦變得複雜，即便使用專利文獻1中記載之光罩亦無法充分地消除之新課題被本發明者發現。例如，於欲在被轉印體上相互以特定之近距離配置複數個孔圖案，形成密集圖案之情形時，於光罩上之轉印用圖案中，各個主圖案所具有之輔助圖案彼此接近。於此情形時，原本不以轉印為目的之輔助圖案之透過光於被轉印體上使抗蝕劑厚度損耗，從而產生妨礙設為目的之轉印圖像之形成之風險。此處，所謂密集圖案係指於被轉印體上2個以上之孔圖案接近地配置之圖案，因此，於光罩上，該密集圖案係指2個以上之主圖案接近地配置之圖案。所謂接近地配置之圖案係指於曝光環境下光罩上之處於孔形成用圖案相互造成光學性影響之程度之距離之圖案。於本案說明書中，除了包含主圖案彼此處於接近之位置之情形以外，還存在包含隨附於主圖案之輔助圖案彼此處於接近之位置之情形在內稱為接近地配置之圖案。 於專利文獻2中記載有藉由使用環狀照明之縮小投影曝光系統進行曝光，用於半導體積體電路裝置之製造之光罩。其中，記載有於具有包圍開口部之輪廓偏移器之圖案中，於與相鄰之圖案之各者對應之輪廓偏移器彼此之間隔變小之情形時，藉由將該各輪廓偏移器彼此結合而設為1個相位偏移器。具體而言，如圖15所示，於分別以4個輪廓偏移器711、712、713包圍開口圖案721、722、723之周圍且開口圖案722與開口圖案723之間隔較小之情形時，輪廓偏移器714成為被開口圖案722與開口圖案723兩者共有之輪廓偏移器。而且，專利文獻2記載之光罩可使孤立間隙圖案與孤立線圖案或密集圖案同時微細化而有用。 但，根據本發明者之研究，發現於顯示裝置製造用光罩中，若使用專利文獻2中記載之方法，則未必有用。 因此，本發明之目的在於提供一種於製造顯示裝置之情形時，可於被轉印體上穩定地形成微細之孔圖案之顯示裝置製造用光罩。 [解決問題之技術手段] (第1態樣) 本發明之第1態樣係一種顯示裝置製造用光罩，其特徵在於：其係於透明基板上具有轉印用圖案者，且 上述轉印用圖案包含： 主圖案，其包含四邊形之透光部； 輔助圖案，其配置於上述主圖案之周邊，且包含相位偏移部；及 低透光部，其形成於上述主圖案及上述輔助圖案以外之區域； 於定義上述主圖案之周邊中將上述主圖案包圍之特定寬度之正八邊形帶時，上述輔助圖案構成上述正八邊形帶之至少一部分， 於將上述轉印用圖案所包含之複數個上述主圖案之1個設為第1主圖案時，與上述第1主圖案不同之第2主圖案配置於接近上述第1主圖案之位置， 構成包圍上述第1主圖案之上述正八邊形帶之八區段中之面向上述第2主圖案側之一區段中具有缺損之輔助圖案配置於上述第1主圖案之周邊。 (第2態樣) 本發明之第2態樣係如上述第1態樣之顯示裝置製造用光罩，其特徵在於： 於將上述主圖案之直徑設為W1時，上述轉印用圖案於被轉印體上形成直徑W2(其中W1≧W2)之孔圖案作為上述主圖案之轉印圖像。 (第3態樣) 本發明之第3態樣係如上述第1或第2態樣之顯示裝置製造用光罩，其特徵在於： 於將上述第1主圖案與上述第2主圖案之排列方向設為X方向時，上述第1主圖案之X方向之尺寸小於與上述X方向垂直之Y方向之尺寸。 (第4態樣) 本發明之第4態樣係如上述第1至第3態樣中任一項之顯示裝置製造用光罩，其特徵在於： 上述轉印用圖案包含3個以上之上述主圖案於X方向、與上述X方向垂直之Y方向、或上述X方向及上述Y方向上規則地排列而成之密集圖案，且構成上述密集圖案之主圖案之各者具有使上述八區段中之面向另一主圖案側之至少一區段缺損而成之上述輔助圖案。 (第5態樣) 本發明之第5態樣係如上述第1至第4態樣中任一項之顯示裝置製造用光罩，其特徵在於： 上述相位偏移部於上述透明基板上形成有對於曝光之光之代表波長之透過率為20～80%並且使上述曝光之光之相位偏移大致180度之相位偏移膜。 (第6態樣) 本發明之第6態樣係如上述第1至第5態樣中任一項之顯示裝置製造用光罩，其特徵在於： 上述低透光部係對於曝光之光之光學密度OD為2以上之遮光部。 (第7態樣) 本發明之第7態樣係一種顯示裝置之製造方法，其包括如下步驟： 準備如上述第1至第6態樣中任一項之光罩； 使用數值孔徑(NA)為0.08～0.15且具有包含i線、h線、及g線之至少任一個之曝光光源之曝光裝置，將上述轉印用圖案曝光，於被轉印體上形成直徑W2為0.8～3.0(μm)之孔圖案。 [發明之效果] 根據本發明，於製造顯示裝置之情形時，可於被轉印體上穩定地形成微細之孔圖案。[Problems to be Solved by the Invention] In a display device including a liquid crystal display (liquid crystal display) or an organic electroluminescence (EL) display device, a brighter, power-saving, high-definition, high-speed display is desired. , Wide viewing angle and other display performance improvements. For example, in the case of a thin film transistor (TFT) used in the above display device, the contact hole formed in the interlayer insulating film among the plurality of patterns constituting the TFT must have a pattern that reliably connects the upper and lower patterns. To ensure correct action. On the other hand, in order to increase the aperture ratio of the liquid crystal display device as much as possible, and to make a bright and power-saving display device, the diameter of the contact hole is required to be sufficiently small, and the density of the display device is required, and the diameter of the hole pattern is desired. It is also miniaturized (for example, less than 3 μm). For example, it is considered that a hole pattern having a diameter of 0.8 μm or more and 2.5 μm or less, and further a diameter of 2.0 μm or less is required. Specifically, it is also desirable to form a pattern having a diameter of 0.8 to 1.8 μm. However, in the field of photomasks for the manufacture of semiconductor devices (LSIs), which have a higher integration than display devices and that the miniaturization of patterns has progressed significantly, in order to obtain higher resolution, they are more suitable for exposure devices. An optical system with a numerical aperture NA (for example, more than 0.2) advances the short wavelength of the exposed light. As a result, KrF or ArF excimer lasers (single wavelengths of 248 nm and 193 nm, respectively) are commonly used in this field. On the other hand, in the field of lithography for display device manufacturing, the above-mentioned methods are generally not applied in order to improve the resolution. For example, the NA (numerical aperture) of the optical system of the exposure device used in this field is about 0.08 to 0.12, and it is expected that it will be in an environment where 0.20 or less, for example, about 0.08 to 0.15 is applicable in the future. In addition, the exposure light source also generally uses i-line, h-line, or g-line, and by using a wide-wavelength light source mainly including them, to obtain a large amount of light for illuminating a large area, there is a strong tendency to value production efficiency or cost. Moreover, in the manufacture of a display device, as mentioned above, the demand for the miniaturization of a pattern is increasing. Here, there are several problems in directly applying the technology for manufacturing a semiconductor device to the manufacture of a display device. For example, the conversion to a high-resolution exposure device with a high NA (numerical aperture) requires a large investment in equipment, so that it cannot obtain a match with the price of a display device. In addition, the change of the exposure wavelength (using a short wavelength such as ArF excimer laser at a single wavelength) is not suitable for a display device with a large area, which not only reduces production efficiency, but also requires considerable equipment investment. . That is, pursuing the miniaturization of a pattern that did not exist before, on the other hand, the cost or efficiency of the existing advantages cannot be lost, which becomes a problem of the photomask for the manufacture of a display device. The inventor proposes a photomask having: a main pattern including a light transmitting portion; an auxiliary pattern disposed near the main pattern and including a phase shifting portion that shifts a phase of light of a specific wavelength; And low-light-transmitting portions, which are formed in areas other than these main patterns and auxiliary patterns (Patent Document 1). This photomask can be advantageously used when a fine isolated hole is stably formed in a transfer target such as a display panel substrate. On the other hand, as the configuration of the display device becomes more complicated, the design of the pattern for transfer becomes more complicated, and a new problem that cannot be sufficiently eliminated even by using the mask described in Patent Document 1 was discovered by the present inventors. For example, when a plurality of hole patterns are to be arranged at a specific close distance to each other on the object to be transferred to form a dense pattern, among the transfer patterns on the photomask, the auxiliary patterns of the main patterns are close to each other. . In this case, the transmitted light of the auxiliary pattern, which was not originally intended for transfer, causes loss of the thickness of the resist on the object to be transferred, thereby causing the risk of preventing the formation of the intended transfer image. Here, the dense pattern refers to a pattern in which two or more hole patterns are arranged close to each other on the transferee. Therefore, on the photomask, the dense pattern refers to a pattern in which two or more main patterns are arranged close to each other. The closely-arranged pattern refers to a pattern at a distance on the mask that is optically influential with each other on the mask under an exposure environment. In the description of this case, in addition to the case where the main patterns are close to each other, there are also patterns referred to as closely arranged including the case where the auxiliary patterns accompanying the main pattern are close to each other. Patent Document 2 describes a photomask used for manufacturing a semiconductor integrated circuit device to perform exposure by a reduced projection exposure system using ring illumination. Among them, in a pattern having a contour shifter surrounding an opening portion, when the interval between the contour shifters corresponding to each of the adjacent patterns becomes smaller, the contours are shifted by The devices are combined with each other to form one phase shifter. Specifically, as shown in FIG. 15, when four contour shifters 711, 712, and 713 respectively surround the opening patterns 721, 722, and 723 and the interval between the opening pattern 722 and the opening pattern 723 is small, The contour shifter 714 becomes a contour shifter shared by both the opening pattern 722 and the opening pattern 723. Further, the mask described in Patent Document 2 is useful for making the isolated gap pattern and the isolated line pattern or dense pattern simultaneously fine. However, according to the study by the present inventors, it has been found that if the method described in Patent Document 2 is used in a mask for manufacturing a display device, it is not necessarily useful. Therefore, an object of the present invention is to provide a photomask for manufacturing a display device, which can stably form a fine hole pattern on a transfer target when manufacturing a display device. [Technical means to solve the problem] (First aspect) A first aspect of the present invention is a photomask for manufacturing a display device, which is characterized in that it has a pattern for transfer on a transparent substrate, and the above transfer The pattern includes: a main pattern including a light-transmitting portion having a quadrangular shape; an auxiliary pattern disposed around the main pattern and including a phase shift portion; and a low-light transmitting portion formed on the main pattern and the auxiliary pattern Outside the area; when defining a regular octagonal band of a specific width that surrounds the main pattern in the periphery of the main pattern, the auxiliary pattern constitutes at least a part of the regular octagonal band, and the When one of the plurality of main patterns is set as the first main pattern, a second main pattern different from the first main pattern is disposed close to the first main pattern to constitute the regular eight sides surrounding the first main pattern. The auxiliary pattern having a defect in one of the eight segments of the strip facing the second main pattern side is arranged around the first main pattern. (Second aspect) The second aspect of the present invention is the photomask for manufacturing a display device as described in the first aspect, wherein when the diameter of the main pattern is W1, the pattern for transfer is A hole pattern with a diameter W2 (where W1 ≧ W2) is formed on the transferred body as a transfer image of the main pattern. (Third aspect) The third aspect of the present invention is a photomask for manufacturing a display device as described in the first or second aspect, wherein the first main pattern and the second main pattern are arranged in an array. When the direction is set to the X direction, the size of the X direction of the first main pattern is smaller than the size of the Y direction perpendicular to the X direction. (Fourth aspect) The fourth aspect of the present invention is the photomask for manufacturing a display device according to any one of the first to third aspects, wherein the transfer pattern includes three or more of the above-mentioned patterns. The main patterns are dense patterns regularly arranged in the X direction, the Y direction perpendicular to the X direction, or the X direction and the Y direction, and each of the main patterns constituting the dense pattern has the eight segments described above. The above auxiliary pattern is formed by at least one segment of the middle facing the other main pattern side is missing. (Fifth aspect) The fifth aspect of the present invention is the photomask for manufacturing a display device according to any one of the first to fourth aspects, wherein the phase shift portion is formed on the transparent substrate. There is a phase shift film having a transmittance of 20 to 80% for a representative wavelength of the exposed light and shifting the phase of the exposed light by approximately 180 degrees. (Sixth aspect) The sixth aspect of the present invention is the photomask for manufacturing a display device according to any one of the first to fifth aspects described above, wherein the low-light-transmitting portion is configured for exposure to light. A light-shielding portion having an optical density OD of 2 or more. (Seventh aspect) A seventh aspect of the present invention is a method for manufacturing a display device, which includes the following steps: preparing a photomask according to any one of the first to sixth aspects; using a numerical aperture (NA) An exposure device having an exposure light source including at least one of i-line, h-line, and g-line is 0.08 to 0.15, and the above-mentioned transfer pattern is exposed to form a diameter W2 of 0.8 to 3.0 (μm) on the transferee. ) Hole pattern. [Effects of the Invention] According to the present invention, when a display device is manufactured, a fine hole pattern can be stably formed on a body to be transferred.
[具有輔助圖案之孔圖案形成用光罩之設計] 圖1係表示專利文獻1中記載之光罩之轉印用圖案之主要部分者，(a)係俯視模式圖，(b)係(a)之A-A位置之剖視模式圖。 圖示之光罩之轉印用圖案具有包含透光部之主圖案1、及於該主圖案1之周邊包圍主圖案1而配置之輔助圖案2。輔助圖案2係隨附於主圖案1配置於主圖案1之周圍。 又，於透明基板10上形成有相位偏移膜11及低透光膜12。主圖案1包含露出透明基板10之透光部4，輔助圖案2包含露出透明基板10上之相位偏移膜11之相位偏移部5。又，低透光部3分別包圍主圖案1及輔助圖案2。 低透光部3包括形成於透明基板10上之相位偏移膜11與低透光膜12之積層膜。低透光部3亦可包括形成於透明基板10上之低透光膜12之單層膜。亦即，低透光部3包含至少形成有低透光膜12之部分。於圖示之轉印用圖案中，形成有主圖案1及輔助圖案2之區域以外之區域成為低透光部3。 相位偏移膜11具有使處於i線～g線之波長範圍之代表波長之曝光之光偏移大致180度之相位偏移量。即，輔助圖案2具有藉由該相位偏移膜11而將透過光之相位反轉之作用。又，對於上述代表波長之曝光之光，相位偏移膜11具有T1(%)之透過率。 根據專利文獻1，使用具備上述轉印用圖案之光罩進行於被轉印體上形成孔圖案之光學模擬之後，與不具備二元遮罩或輔助圖案之相位偏移遮罩相比，顯然於Eop(將目標尺寸之圖案形成於被轉印體上所需之曝光光量)或DOF(Depth of Focus：焦點深度)等方面，發揮了優異之性能。 本發明者為了於被轉印體上形成更微細之圖案，而對圖2(a)～(c)所示之光罩進行了光學模擬。此處，將圖2(a)之光罩設為參考例1，將圖2(b)所示之光罩設為參考例2，將圖2(c)所示之光罩設為參考例3。繼而，使用具有包含直徑W1為2.0 μm之孔圖案之主圖案之參考例1～3之各光罩，進行於被轉印體(顯示面板基板等)上之正型光阻形成相當於直徑W2(此處為1.5 μm)之孔圖案之轉印圖像之模擬。 再者，如上所述，將光罩上之直徑W1設為相對於被轉印體上之目標直徑W2為W1≧W2(較佳為W1＞W2)。此處，若將遮罩偏差β1(μm)設為β1＝W1－W2，則此處將β1設為0.5(μm)。 模擬之條件如下所述。 (參考例1) 於參考例1中，如圖2(a)所示，使用包含二元遮罩之光罩，將被低透光部(遮光部)3包圍之包含直徑W1＝2 μm之正方形之透光部之孔圖案設為主圖案1。 (參考例2) 於參考例2中，如圖2(b)所示，使用包含半色調式相位偏移遮罩之光罩，將被曝光之光之透過率為5.2%且相位偏移量為180度之相位偏移部5包圍之包含直徑W1＝2 μm之正方形透光部的孔圖案設為主圖案1。 (參考例3) 於參考例3中，如圖2(c)所示，使用包含附有輔助圖案之相位偏移遮罩之光罩，設為將包含直徑W1＝2 μm之正方形透光部之孔圖案設為主圖案1且正八邊形帶之輔助圖案2包圍該圖案1之周邊之構成。又，輔助圖案2包含曝光之光之透過率為45%且相位偏移量為180度之相位偏移部，主圖案1及輔助圖案2以外之區域包含光學密度為OD≧2之低透光部(遮光部)3。主圖案1之中心與輔助圖案2之寬度方向中心位置之距離(L)設為3.25 μm，輔助圖案2之寬度(d)設為1.3 μm。參考例3之光罩係基於專利文獻1中記載之構成設計而成。 使用與上述參考例1～3對應之各個光罩，於被轉印體上形成寬度W2＝1.5 μm之孔圖案。 模擬之曝光條件如下所述。 曝光裝置之光學系統係數值孔徑NA為0.1，同調因子σ為0.5。又，於曝光光源中使用包含所有i線、h線、g線之光源(寬波長光源)，強度比設為g：h：i＝1：1：1。 光罩之光學評價項目如下所述。 (1)焦點深度(DOF) 焦點深度(DOF)係於在曝光時產生散焦之情形時，於被轉印體上用以使相對於目標CD之CD變動成為特定範圍(例如±10%)內之焦點深度，且較理想為其數值較大。若DOF數值較高，則不易受到被轉印體(例如顯示裝置用之面板基板)之平坦度之影響，從而可確實地形成微細之圖案，抑制該CD不均。於本案之模擬中，作為DOF值，將目標CD±10%設為基準。此處，所謂CD係臨界尺寸(Critical Dimension)之簡稱，且以圖案寬度之含義使用。顯示裝置製造用光罩係較半導體裝置製造用光罩，尺寸更大，又，被轉印體(顯示器面板基板等)亦為大尺寸，均難以獲得完全之平坦性，因此，提高DOF數值之光罩之意義較大。 (2)遮罩誤差增強因子(MEEF：Mask Error Enhancement Factor) 遮罩誤差增強因子係表示形成於被轉印體上之圖案之CD誤差相對於光罩上之CD誤差之比率之數值，MEEF越低，則越可減少形成於被轉印體上之圖案之CD誤差。顯示裝置之規格進化，要求圖案之微細化，並且需要具有接近曝光裝置之解像極限之尺寸之圖案之光罩，因此，於顯示裝置製造用光罩中，今後重視MEEF之可能性亦較高。 (3)Eop 於顯示裝置製造用光罩中，特別重要之評價項目中具有Eop(以下亦稱為「Eop劑量」)。Eop係將需要獲得之圖案尺寸形成於被轉印體上所需之曝光光量。用於顯示裝置之製造之光罩的尺寸極大(例如主表面之一邊為300～2000左右之正方形或長方形)。因此，若使用Eop數值較低之光罩，則可提高掃描曝光之速度，生產效率提昇。 將對於上述評價項目之具體之評價結果示於圖3。 首先，若著眼於Eop，則參考例3之光罩相較參考例1及參考例2之光罩，用以獲得目標尺寸之孔圖案之曝光量(Eop數值)較小為30%以上。因此，可知若使用參考例3之光罩，則可獲得較高之生產效率。又，參考例3之光罩相較參考例1及參考例2之光罩，DOF數值變高，MEEF數值變低。因此，可知參考例3之光罩於DOF或MEEF中亦極為有利。 [處於相互接近之位置之孔圖案之設計] 另一方面，若對顯示裝置要求之解像度提高，則因每單位面積之像素數之增加導致積體度提高。因此，作為顯示裝置製造用光罩之轉印用圖案，必須使複數個主圖案(孔圖案)相互接近地配置。以下，對在包含複數個主圖案之密集圖案之形成中適用上述參考例3之光罩之情形進行研究。 圖4表示將適用於上述參考例3之圖案(結合主圖案與形成於其周邊之輔助圖案，於本案說明書中，亦稱為孔形成用圖案)相互接近地配置之情形。此處，將2個主圖案中之一個設為第1主圖案1a，將另一個設為第2主圖案1b。繼而，考察於使第2主圖案1b之位置對於第1主圖案1a自箭頭方向接近時，作為2個主圖案1a、1b之重心間距離之孔間距P及形成於被轉印體上之抗蝕圖案之剖面形狀。 首先，如圖5(a)所示，於第1主圖案1a與第2主圖案1b充分隔開之情形(P＝12 μm)時，如圖5(b)所示，於被轉印體上之抗蝕圖案(此處為包含正型之光阻之圖案)20形成與各個主圖案1a、1b對應之孔圖案21a、21b。 另一方面，如圖6(a)所示，於第2主圖案1b對於第1主圖案1a接近之情形時(P＝8 μm)時，配置於各個主圖案1a、1b之周圍之輔助圖案2a、2b彼此之距離變得極近。此時，若觀察形成於被轉印體上之抗蝕圖案20之剖面，則如圖6(b)所示，除與主圖案1a、1b對應之孔圖案21a、21b以外，於其等之中間部形成凹部22，因此，產生抗蝕膜厚之較大之損耗。此種抗蝕殘膜之局部減少存在對將抗蝕圖案作為蝕刻遮罩進行之顯示裝置基板之加工穩定性造成不良影響之虞。 因此，本發明者對Eop或DOF方面具有有利之特性，但會產生如上所述之抗蝕殘膜之局部減少之類欠佳情況之參考例3之孔形成用圖案，研究了能夠消除該欠佳情況之光罩。 ＜光罩之構成＞ 其次，對本發明之實施形態之顯示裝置製造用光罩之構成進行說明。 本發明之實施形態之顯示裝置製造用光罩係 於透明基板上具有轉印用圖案者，且 上述轉印用圖案包含： 主圖案，其包含四邊形之透光部； 輔助圖案，其配置於上述主圖案之周邊，且包含相位偏移部；及 低透光部，其形成於上述主圖案及上述輔助圖案以外之區域； 於定義上述主圖案之周邊中包圍上述主圖案之特定寬度之正八邊形帶時，上述輔助圖案構成上述正八邊形帶之至少一部分， 於將上述轉印用圖案所包含之複數個上述主圖案之1個設為第1主圖案時，與上述第1主圖案不同之第2主圖案配置於接近上述第1主圖案之位置， 構成包圍上述第1主圖案之上述正八邊形帶之八區段中之面向上述第2主圖案側之一區段中具有缺損之輔助圖案係配置於上述第1主圖案之周邊。 以下，使用圖7具體地進行說明。 圖7係表示本發明之實施形態之顯示裝置製造用光罩所具備之轉印用圖案之主要部分者，(a)係俯視模式圖，(b)係(a)之B-B位置之剖視模式圖。 上述顯示裝置製造用光罩(以下亦簡稱為「光罩」)例如具備藉由使成膜於透明基板10上之相位偏移膜11及低透光膜12分別圖案化而形成之轉印用圖案。該轉印用圖案包含主圖案1(1a、1b)、及配置於主圖案1之周邊之輔助圖案2(2a、2b)。輔助圖案2於定義包圍主圖案1之特定寬度之正八邊形帶時，具有構成該正八邊形帶之至少一部分之形狀。 主圖案1於X方向排列有2個，其中一個成為第1主圖案1a，另一個成為第2主圖案1b。於第1主圖案1a之周邊配置有輔助圖案2a，於第2主圖案1b之周邊配置有輔助圖案2b。再者，於圖7(a)中，將左側之主圖案設為第1主圖案，將右側之主圖案設為第2主圖案，但任一個均可設為第1主圖案。 於本實施形態中，主圖案1包含露出透明基板10之透光部4，輔助圖案2包含露出透明基板10上之相位偏移膜11之相位偏移部5。又，主圖案1及輔助圖案2以外之區域成為於透明基板10上至少形成有低透光膜12之低透光部3。 於本實施形態中，低透光部3係於透明基板10上積層相位偏移膜11及低透光膜12而成。相位偏移膜11具有使處於i線～g線之波長範圍之代表波長之曝光之光偏移大致180度之相位偏移量。又，相位偏移膜11對於上述代表波長之曝光之光之透過率為T1(%)。 低透光膜12可設為對於曝光之光之代表波長具有特定之較低之透過率者。於本實施形態中，低透光膜12可對於處於i線～g線之波長範圍之代表波長之曝光之光具有較相位偏移膜11之透過率T1(%)更低之透過率T2(%)。或者，低透光膜12亦可設為實質上不使曝光之光透過之遮光膜。 此處，於藉由使用光罩之曝光而於被轉印體上形成與光罩之主圖案1對應之微細之圖案(孔圖案)之情形時，若將主圖案1之直徑W1設為4 μm以下，則可於被轉印體上形成直徑W2(μm)(其中，W1≧W2，更佳為W1＞W2)之微細之圖案。 具體而言，主圖案1之直徑W1(μm)較佳為0.8≦W1≦4.0，更佳為1.0≦W1≦3.5。進而，可設為1.2＜W1≦3.0，於必須更微細化之情形時，可設為1.2＜W1＜2.5。 又，作為主圖案1之轉印圖像形成於被轉印體上之孔圖案之直徑W2(μm)較佳為0.8≦W2≦3.0，更佳為0.8≦W2≦2.5，進而較佳為0.8≦W2≦2.0或0.8≦W2≦1.8。或者，可設為0.8＜W2＜2.0或0.8＜W2＜1.8。於必須更微細化之情形時，可設為0.8＜W2＜1.5。 又，本實施形態之光罩可出於形成對顯示裝置之製造有用之微細尺寸之圖案之目的而使用。例如，於主圖案1之直徑W1為3.0(μm)以下時，可獲得更顯著之效果。 然而，於需要在被轉印體上形成孔圖案之光罩(例如上述參考例1～3)中，如上所述賦予遮罩偏差β1較為有利。即，若將光罩上之孔圖案之直徑設為W1，將形成於被轉印體上之孔圖案之直徑設為W2，則亦可設為W1＝W2，但較佳為W1＞W2。例如，若將β1(μm)設為偏差值(W1－W2)，且β1＞0(μm)，則偏差值β1(μm)較佳為0.2≦β1≦1.0，更佳為0.2≦β1≦0.8。如此，藉由將直徑W1與直徑W2之關係規定為偏差值β1，可獲得於被轉印體上可減少抗蝕圖案之膜厚之損耗等有利之效果。 再者，主圖案1包含四邊形之圖案，主圖案1之直徑W1係四邊形之一邊之尺寸。例如，若主圖案1為正方形之圖案，則主圖案1之直徑W1係指正方形之一邊之尺寸，若主圖案1為長方形之圖案，則直徑W1係指長邊之尺寸。又，主圖案1之形狀係指俯視主圖案1時之形狀。進而，形成於被轉印體上之孔圖案之直徑W2係指對向之2邊之間之距離最大之部分之長度。 如上所述之遮罩偏差β1亦可賦予本實施態樣之光罩。於本實施形態中，因2個孔形成用圖案接近特定距離地形成而存在作為遮罩偏差β1而賦予之尺寸較孤立圖案(上述參考例1～3等)變大之情形。 進而，產生本實施態樣之光罩較佳為根據接近地配置之2個孔形成用圖案之位置關係，相對於X方向及與其垂直之Y方向賦予不均等之尺寸之遮罩偏差之情形。因此，將此種遮罩偏差設為β2，將相對於X方向、及與其垂直之Y方向賦予之偏差量分別設為β2(x)、β2(y)。對於遮罩偏差β2之詳情下文敍述。 對於用於具有上述轉印用圖案之本實施形態之光罩之曝光之曝光之光之代表波長，主圖案1與輔助圖案2之相位差f為大致180度。即，透過主圖案1之上述代表波長之光與透過輔助圖案2之上述代表波長之光之相位差f1成為大致180度。所謂大致180度係指120～240度。上述相位差f1較佳為150～210度。 再者，本實施形態之光罩於使用包含i線、h線、及g線之至少1種之曝光之光時效果較為顯著，尤其，較佳為適用包含i線、h線、及g線之寬波長光作為曝光之光。於此情形時，可將處於i線～g線之波長範圍之任一波長設為代表波長。例如，可將h線作為代表波長構成本實施形態之光罩。更佳為對於上述代表波長之相位差f1為f1＝180度。 於本實施形態之光罩中，為實現上述相位差，只要將主圖案1設為透明基板10之主表面露出而成之透光部4，將輔助圖案2設為形成於透明基板10上之相位偏移膜11露出而成之相位偏移部5，將該相位偏移膜11對於上述代表波長之相位偏移量設為大致180度即可。 相位偏移部5所具有之透過率T1可如下所述地設定。即，若將形成於相位偏移部5之相位偏移膜11對於上述代表波長之透過率設為T1(%)，則較佳為20≦T1≦80，更佳為30≦T1≦75，進而較佳為40≦T1≦75。若輔助圖案2之透過率較高，則為獲得特定量之透過光量，可減小輔助圖案寬度(d)，因此，具有獲得可避免密集圖案中之相互之物理干涉而配置之自由度之優點。另一方面，若略微降低透過率T1，擴大輔助圖案寬度(d)，則存在圖案形成之製造上之難易度得以緩和之優點。於此情形時，透過率T1較佳為40～60(%)。再者，此處之透過率T1(%)設為以透明基板10之透過率為基準(100%)時之上述代表波長之透過率。 於本實施形態之光罩中，於形成有主圖案1及輔助圖案2之區域以外之區域形成有低透光部3。此處，主圖案1與輔助圖案2介隔低透光部3分隔。低透光部3可設為如下構成。 低透光部3係曝光之光(處於i線～g線之波長範圍之代表波長之光)實質上不透過之低透光膜(即遮光膜)12，且可設為於透明基板10上形成光學密度OD≧2(較佳為OD≧3)之膜而成者。 又，低透光部3亦可設為形成以特定範圍之透過率使曝光之光透過之低透光膜12而成者。但，於以特定範圍之透過率透過曝光之光之情形時，低透光部3對於上述代表波長之透過率T3(%)設為相較上述相位偏移部5之透過率T1(%)，滿足0＜T3＜T1者，較佳為滿足0＜T3≦20。此處，於相位偏移部5並非包含相位偏移膜11之單層膜而包含相位偏移膜11與低透光膜12之積層膜之情形時，將作為該積層膜之透過率設為T3(%)。此處之透過率T3(%)亦與上述同樣地設為以透明基板10之透過率為基準時之上述代表波長之透過率。 又，於如此般低透光膜12以特定範圍之透過率使曝光之光透過之情形時，相位偏移膜11與低透光膜12之積層狀態下之相位偏移量f3較佳為90(度)以下，更佳為60(度)以下。所謂「90度以下」係指若以弧度表述，則上述相位差為「(2n－1/2)π～(2n＋1/2)π(此處n為整數)」。對於相位差，亦與上述同樣地，設為對於曝光之光中包含之代表波長者。 又，作為用於本實施形態之光罩之低透光膜12之單獨之性質，較佳為實質上不使上述代表波長之光透過(OD≧2，更佳為OD＞3)者，或具有未達30(%)之透過率(T2(%))(即0＜T2＜30)且相位偏移量(f2)為大致180度。所謂大致180度係指120～240度者。較佳為相位偏移量f2為150～210度。 此處之透過率T2(%)亦與上述同樣地設為以透明基板10之透過率為基準時之上述代表波長之透過率。 於本實施形態之轉印用圖案中，若將輔助圖案2之寬度設為d(μm)，則於下述式(1)之關係成立時，可獲得顯著之效果。 0.5≦√(T1/100)×d≦1.5・・・(1) 此時，若將主圖案1之中心與輔助圖案2之寬度方向之中心之距離設為狹縫間距L(μm)，則較佳為1.0＜L≦5.0，更佳為1.5＜L≦4.5。但，輔助圖案2構成介隔低透光部3包圍主圖案1之正八邊形帶之區域之至少一部分。因此，可以主圖案1與輔助圖案2不接觸之方式，即以於主圖案1之周圍且與輔助圖案2之間介置低透光部3為條件，決定狹縫間距L、及主圖案之直徑W1。 輔助圖案2之寬度d(μm)係設定為於適用於本實施形態之光罩之曝光條件(使用之曝光裝置)下，具有透過率T1之輔助圖案不進行解像。列舉具體之例，輔助圖案2之寬度d(μm)較佳為d≧0.7，更佳為d≧0.8。又，若與主圖案1之寬度W1(μm)比較，則較佳為d≦W1，更佳為d＜W1。 又，關於輔助圖案2之寬度d(μm)，上述式(1)中表示之關係式更佳為下述式(1)－1，進而較佳為下述式(1)－2。 0.7≦√(T1/100)×d≦1.2 ・・・(1)－1 0.75≦√(T1/100)×d≦1.0 ・・・(2)－2 本實施形態之轉印用圖案所具備之主圖案1之形狀為四邊形。具體而言，主圖案1之形狀例如較佳為設為正方形或長方形。於主圖案1之形狀為四邊形之情形時，該四邊形之重心位置與輔助圖案2之寬度方向之中心之距離成為狹縫間距L。 於本實施形態中，於定義在主圖案1之周邊包圍主圖案1之特定寬度之正八邊形帶時，輔助圖案2成為構成該正八邊形帶之至少一部分之圖案。所謂正八邊形帶係指外周及內周均為八邊形且大致固定寬度之形狀。如圖7所示，輔助圖案2係角部以外為固定寬度。定義輔助圖案2之正八邊形帶以包圍主圖案1之方式配置於主圖案1之周邊。而且，輔助圖案2之成為正八邊形帶之內輪廓、外輪廓之正八邊形之重心位於與主圖案1之重心相同之位置。於本實施形態中，為便於說明，而如圖8所示，將上述正八邊形帶劃分為與外周(或內周)之八邊形之各邊對應之8個區段。此處，將劃分為8個之區段中之圖8之右端之區段設為區段A，將與其鄰接之上側之區段設為區段H，將下側之區段設為區段B。亦即，自區段A起以順時針設為區段B、C、D、E、F、G、H。 如上述圖4所示，於對於第1主圖案1a將第2主圖案1b配置於接近之位置之情形時，於本實施形態中，於第1主圖案1a之周邊配置構成上述正八邊形帶之8個區段A～H中之面向第2主圖案1b側之一區段中具有缺損之形狀之輔助圖案2a。具體而言，如圖7(a)所示，於第1輔助圖案1a之周邊配置八邊形帶之一部分區段缺損之輔助圖案2a。如圖示般，隨附於第1主圖案1a之輔助圖案2a成為於面向第2主圖案1b之側、即於右端之區段(與上述區段A對應)具有缺損之形狀。又，隨附於第2主圖案1b之輔助圖案2b亦成為於面向第1主圖案1a側之一區段(與上述區段E對應)具有缺損之形狀。亦即，2個主圖案具有於位於相互對向之側之一區段分別具有缺損之八邊形帶形狀之輔助圖案。 即，於2個孔形成用圖案以特定距離以下之接近距離配置之情形時，各個主圖案所具備之輔助圖案於上述2個主圖案之間缺損。因此，若以直線將2個主圖案之重心連結(未圖示)，則該直線完全不穿過輔助圖案。 再者，較佳為，於被2個主圖案之相互對向之邊夾持之區域S(圖7(a)中虛線所示)內實質上不配置輔助圖案。但，於輔助圖案之一部分進入區域S之情形時，較佳為該部分不具有與2個主圖案之相互對向之邊平行之邊。於圖7所示之態樣中，輔助圖案之端部進入區域S內，但該端部僅具有對於2個主圖案之相互對向之邊傾斜之邊。 又，較佳為，於區域S內不存在島狀(被閉合之直線或曲線包圍之形狀)之輔助圖案。 進而，較佳為，上述區域S內之面積之90%以上包含低透光部。藉此，形成於被轉印體上之2個孔圖案之抗蝕圖案形狀變得良好，從而可抑制抗蝕殘膜厚度之損耗。 若以此方式配置一部分區段缺損之輔助圖案2a、2b，則因上述圖6(b)所示之凹部22導致之抗蝕膜厚之損耗如圖9所示般消除，成為具有良好之輪廓之抗蝕圖案形狀。再者，圖6(b)及圖9均為孔間距P為8 μm之情形。 圖6(b)中觀察之抗蝕膜厚之損耗之容許範圍可根據欲使用光罩獲得之顯示裝置之製造條件等而決定。若將抗蝕膜之初期膜厚(塗佈膜厚)設為100%，則其損耗之容許範圍設為初期膜厚之10%以下更佳為5%以下可謂良好之條件。 因此，於本實施形態中，是否使隨附於相互接近之主圖案1a、1b之輔助圖案2a、2b一部分缺損，只要預先藉由實驗或模擬等掌握抗蝕膜厚之損耗量，並基於其結果進行判斷即可。具體而言，以如下方式進行判斷較為有用，即，於抗蝕膜厚之損耗量例如超過10%之情形時，使輔助圖案2a、2b一部分缺損，於成為10%以下之情形時，不使輔助圖案2a、2b缺損。 進而，於對於第1主圖案1a將第2主圖案1b配置於接近之位置之情形時，較理想為於輔助圖案2a、2b彼此之距離D(參照圖4)成為1.0 μm以下之情形時，使配置於第1主圖案1a之周邊之輔助圖案2a之面向第2主圖案1b側之區段(上文所述之區段A)缺損。同樣地，較佳為於第2主圖案1b中亦形成使面向第1主圖案1a側之區段(上文所述之區段E)缺損之輔助圖案2b。進而，更佳為上述區段之缺損於輔助圖案2a、2b彼此之距離D成為1.5 μm以下時適用。 上述情況係鑒於顯示裝置用曝光裝置所具有之解像性能而例示者。 再者，所謂輔助圖案彼此之距離如圖4所示般係指對向之區段彼此之距離(垂線之長度)。因此，於如圖示般，2個主圖案1a、1b於某一方向相鄰地排列，且各個主圖案1a、1b分別由對應(隨附)之輔助圖案2a、2b包圍之情形時，於2個主圖案1a、1b之排列方向上，輔助圖案2a、2b之相對向之(相互面向之)邊彼此之距離成為輔助圖案彼此之距離D。 又，本實施形態之光罩於作為主圖案1a、1b之重心間距離之孔間距P有1.6 μm以上較佳為3 μm以上之情形時，可獲得本發明之顯著之效果。若孔間距P之值過小，則存在產生如下欠佳情況之風險，即，產生無法充分獲得形成於與兩主圖案間對應之位置之抗蝕圖案之殘膜量之情形，或下述遮罩偏差β2之數值變得過大而圖案設計變得困難等。 以下對本發明之實施例及參考例之光學模擬進行說明。 圖10係表示參考例之光罩所具備之轉印用圖案之主要部分之俯視模式圖，(a)表示參考例4，(b)表示參考例5，(c)表示參考例6，(d)表示參考例7，(e)表示參考例8。圖11係表示本發明之實施例之光罩所具備之轉印用圖案之主要部分之俯視模式圖，(f)表示實施例1，(g)表示實施例2，(h)表示實施例3，(i)表示實施例4。 又，圖10(a)表示主圖案1a、1b之孔間距P(參照圖5～圖7)為16 μm且正八邊形帶之輔助圖案2a、2b無區段之缺損之情形，圖10(b)表示主圖案1a、1b之孔間距P為12 μm且輔助圖案2a、2b無區段之缺損之情形。又，圖10(c)表示主圖案1a、1b之孔間距P為9 μm且輔助圖案2a、2b無區段之缺損之情形，圖10(d)表示主圖案1a、1b之孔間距P為8.75 μm且輔助圖案2a、2b無區段之缺損之情形。圖10(e)表示2個主圖案1a、1b之孔間距P為8.75 μm且將各個輔助圖案2a、2b之一區段結合使之共有之情形。 另一方面，圖11(f)表示主圖案1a、1b之孔間距P為8.75 μm且使輔助圖案2a、2b缺損一區段之情形，圖11(g)表示主圖案1a、1b之孔間距P為8 μm且使輔助圖案2a、2b缺損一區段之情形。又，圖11(h)表示主圖案1a、1b之孔間距P為7.5 μm且使輔助圖案2a、2b缺損一區段之情形，圖11(i)表示主圖案1a、1b之孔間距P為7 μm且使輔助圖案2a、2b缺損3區段之情形。 又，於該模擬中，將使用上述圖2(a)所示之光罩(二元遮罩)之情形設為參考例1，將使用上述圖2(b)所示之光罩(半色調式相位偏移遮罩)之情形設為參考例2。適用於參考例1及參考例2之主圖案均為無輔助圖案之孤立圖案。 對上述各個光罩之圖案進行光學模擬，結果獲得了如圖12所示之結果。於該模擬中，除參考例1及參考例2以外，以作為用於上述圖2(c)所示之主圖案(孤立圖案)之轉印之曝光能量之80 mJ/cm2 之劑量(Eop劑量)為基準，對適用該劑量時形成於被轉印體上之抗蝕圖案進行評價。再者，「panel X-CD」及「panel Y-CD」係與光罩之主圖案對應地形成於被轉印體上之孔圖案之X方向及Y方向之尺寸。再者，於各參考例及各實施例中，將X-CD及Y-CD之目標尺寸設定為1.5 μm。 首先，於圖10(a)之參考例4中，2個主圖案1a、1b充分地隔開，因此，各個主圖案1a、1b實質上發揮作為孤立圖案之光學性能。該方面於圖10(b)之參考例5或圖10(c)之參考例6中亦相同。另一方面，若如圖10(d)之參考例7般，2個主圖案1a、1b接近且孔間距P變窄為8.75 μm，則輔助圖案2a、2b彼此之距離D成為0.95 μm。此時，抗蝕膜厚之損耗超過12%。 此處，於如圖10(e)之參考例8般，將相互接近之主圖案1a、1b之輔助圖案2a、2b彼此局部地接合為一條(1區段)而使之共有之情形時，抗蝕膜厚之損耗亦接近12%，幾乎未見改善。 根據本發明者之研究，認為該問題與適用於顯示裝置製造之光阻相關。具體而言，以用於顯示裝置之製造之光阻(正型光阻)與半導體裝置製造用之光阻不同而具有較高之感度之方式進行設計。因此，於相對較低之劑量中亦未避免相應之減膜，容易於意外之部分產生局部之膜厚之損耗。 再者，於參考例3之光罩中產生之主圖案1與輔助圖案2之相互作用係利用透過輔助圖案2之反轉相位之光所形成之光學影像提高因主圖案1之透過光產生之光強度峰值之現象。而且，獲得了圖3所示之優異之轉印性能(DOF、MEEF)。另一方面，因透過輔助圖案之光而產生之光強度亦藉由與主圖案1之相互作用而略有增加。可認為由於用於顯示裝置製造用之光阻之感度較高，故而，除輔助圖案2彼此接近之情形以外， 若輔助圖案2被複數個主圖案1所共有，則會產生輔助圖案2之透過光使被轉印體上之抗蝕劑厚度減少之風險。 另一方面，於圖11(f)之實施例1中，使構成包圍第1主圖案1a之正八邊形帶之八區段中之面向第2主圖案1b側之一區段缺損，將具有剩餘之7區段之輔助圖案2a配置於第1主圖案1a之周邊。即，設為使包圍第1主圖案1a之周邊之正八邊形帶中之與包圍第2主圖案1b之周邊之正八邊形帶最接近且相向之部分之區段缺損之輔助圖案2a之形狀。又，對於第2主圖案1b亦同樣地，使面向第1主圖案1a側之一區段缺損，將具有剩餘之7區段之輔助圖案2b配置於第2主圖案1b之周邊。 再者，於使輔助圖案之區段缺損時，無需按照圖8所示之區段之交界線切取，例如，如圖7(a)所示般，只要至少使該區段之主要部分缺損即可。關於缺損部分之面積，較佳為，例如，以若係使八區段中之一區段缺損之情形，則為一區段量之面積之80%以上方式，設為使之缺損之區段個數量之面積之80%以上。此時，於2個主圖案之間產生僅介置低透光部3之部分，連結兩主圖案1a、1b之重心之直線不會穿過輔助圖案。 如此，可知於使接近之兩主圖案之輔助圖案中之相互對面之區段缺損之情形時，於所形成之抗蝕圖案中，抗蝕膜厚之損耗變為零等，大幅地減少損耗，而可獲得顯著之效果。又，可知與其同樣之效果於如圖11(g)之實施例2或圖11(h)之實施例3般使兩主圖案1a、1b進而接近之情形(孔間距P＝8 μm、P＝7.5 μm之情形)時亦可獲得。該情形之抗蝕圖案之剖面構造與圖9相同。 然而，於圖11(f)～(i)之實施例中，儘管適用與上述參考例4～8相同之曝光劑量，轉印於抗蝕膜之孔圖案之直徑亦較初期之目標尺寸略微變小。具體而言，就實施例1而言，相對於作為初期之目標尺寸之1.5(μm)，X－CD(X方向之直徑)成為1.39(μm)，Y－CD(Y方向之直徑)成為1.37(μm)。因此，為形成孔圖案，以使被轉印體上之X－CD、Y－CD均接近目標尺寸(1.5 μm)，較理想為使上述遮罩偏差β1大於0.5 μm。 進而，為了將被轉印體上之X－CD及Y－CD同等地設為目標尺寸(1.5 μm)，較佳為於X方向及Y方向分別賦予適當之遮罩偏差β2。 因此，如圖12所示，於圖11(f)～(h)之實施例中，藉由對於遮罩上之CD賦予適當之遮罩偏差β2(x)、β2(y)，而於被轉印體上，X－CD、及Y－CD均取得了作為目標尺寸之1.5 μm。 又，其結果，可知於圖11(f)～(h)之實施例之光罩之情形時，DOF(焦點深度)數值(24)較參考例1之二元遮罩(圖2(a))或參考例2之半色調式相位偏移遮罩(圖2(b))大，而可於被轉印體上穩定地形成所需之直徑之孔圖案。又，由於曝光所需之Eop劑量相較於參考例1之二元遮罩或參考例2之半色調式相位偏移遮罩之情形小，故而可有效率地進行曝光步驟。 再者，於圖11(f)～(h)之實施例中，使隨附於第1主圖案1a之輔助圖案2a之八區段與隨附於第2主圖案1b之輔助圖案2b之八區段中之相互對向之一區段缺損。亦即，對於1個主圖案1，將輔助圖案2之區段數設為7。另一方面，於使兩主圖案1a、1b進而接近配置之情形時，亦能以已使之缺損之區段為中心，使位於其兩側之區段進而缺損。例如，於圖11(i)之實施例4中，使隨附於第1主圖案1a之輔助圖案2a之八區段中之區段A、及位於其兩側之區段B、H缺損，並且使隨附於第2主圖案1b之輔助圖案2b之八區段中之區段E、及位於其兩側之區段D、F缺損，藉此，將抗蝕膜厚之損耗設為零。結果，此處，對1個主圖案1使3個區段缺損，藉此，將輔助圖案2之區段數設為5。進而，相互接近配置之主圖案之個數並不限定於2，可將更多數個孔形成圖案配置於接近之距離，於此情形時，亦可與上述同樣地設計區段之缺損。 於包含接近配置之複數個主圖案(分別至少與其他任一個接近)之圖案群中，於將所包含之主圖案之個數設為N，將輔助圖案之區段總數設為K時， 可設為K≦(8－1)N。 再者，於圖11(f)～(i)中，僅例示了第2主圖案1b對於第1主圖案1a於X方向(圖之左右方向)接近之情形，但於在Y方向上接近之情形時，亦可與上述同樣地配置使八區段中之任一塊缺損之輔助圖案2。 進而，於第2主圖案1b對於第1主圖案1a自主圖案1之對角線方向接近之情形時等自傾斜方向接近之情形時，亦可有效地適用本發明。於此情形時，亦只要使隨附於第1主圖案1a之輔助圖案2a之八區段中之面向第2主圖案1b側之至少一區段缺損即可。 又，於使第3主圖案、進而第4主圖案對於第1主圖案接近配置之情形時，亦可與上述同樣地，使隨附於各個主圖案之輔助圖案之八區段中之相互對向之側之區段缺損。於此情形時，根據複數個主圖案之相對之配置，除具有七區段之輔助圖案之主圖案、具有五區段之輔助圖案之主圖案以外，亦可存在具有六區段、四區段、三區段、二區段、進而一區段之輔助圖案之主圖案。 例如，可設為2個主圖案相互具有逐個缺損1區段之輔助圖案之圖案群、或相互具有逐個缺損3區段之輔助圖案之圖案群。 或者，可設為3個主圖案根據其排列(X方向、Y方向、或X及Y方向、以下同樣)分別具有缺損1或2區段之輔助圖案之圖案群。進而，亦可設為4個主圖案根據其排列分別具有缺損1～5區段之輔助圖案之圖案群。 以下，亦可設為5個或6個或7個主圖案根據其排列分別具有缺損1～6區段之輔助圖案之圖案群，或設為8個主圖案根據其排列分別具有缺損1～7區段之輔助圖案之圖案群。 另一方面，1個主圖案所具有之輔助圖案可設為除面向另一主圖案之側之區段、或其兩側之區段以外無缺損者。 又，有時根據複數個孔形成用圖案之接近方向，形成於被轉印體上之孔圖案之直徑於X方向及Y方向上成為不同數值。其原因在於：對於X方向及Y方向不均等地產生因輔助圖案之一部分區段之缺損而產生之光學影像之變化。因此，出於補償對X方向及Y方向之不均等之光學影像之影響之目的，對圖案之描繪資料賦予在X方向及Y方向不同之尺寸之遮罩偏差β2較為有用。 例如，如上述圖7(a)所示，於第1主圖案1a與第2主圖案1b排列於X方向，且使隨附於兩主圖案1a、1b之輔助圖案2a、2b中之相互面向之區段(即，於Y方向延伸之區段)缺損之情形時，於關於對第1主圖案1a及第2主圖案1b之尺寸賦予之遮罩偏差β2(μm)，將X方向之賦予量設為β2(x)、將Y方向之賦予量設為β2(y)時，可設為β2(y)＞β2(x)。 具體而言，自主圖案觀察，於與存在輔助圖案之缺損部之方向(圖7(a)中為X方向)垂直之方向(圖7(a)中為Y方向)賦予正值之偏差β2(y)。進而，可視需要，於存在輔助圖案之缺損部之方向(圖7(a)中為X方向)賦予負值之偏差β2(x)。 將包含如此般賦予有遮罩偏差β2之主圖案1a、1b之光罩之轉印用圖案例示於圖13。此處，賦予上述遮罩偏差β2之結果，主圖案1a、1b之X方向之尺寸小於Y方向之尺寸，主圖案1a、1b之形狀成為縱長之長方形。 於圖11(g)之實施例中，作為正方形之主圖案1a、1b之轉印圖像形成於被轉印體上之孔圖案成為橫長之長方形(X－CD＝1.40 μm、Y－CD＝1.37 μm)。因此，若藉由遮罩偏差之賦予而將主圖案1a、1b之形狀設為縱長之長方形，則可消除因輔助圖案2a、2b之一部分區段之缺損導致之圖案尺寸之誤差。其結果，可於被轉印體上形成X方向之尺寸與Y方向之尺寸相等之孔圖案。 因此，藉由光學模擬，對X方向、Y方向之各者求出用於X方向與Y方向之尺寸在被轉印體上成為相等之偏差量β2，並將其反映至圖案描繪資料即可。 因此，於光罩所具有之轉印用圖案中，賦予了偏差β2之主圖案成為長方形。即，第1主圖案成為於面向處於接近之位置之第2主圖案之側具有長邊之長方形。 就如上述圖13之排列例而言，主圖案之長邊W3(y)成為W3(y)＝W1＋β2(y)，短邊W3(x)成為W3(x)＝W1＋β2(x)。而且，W3(x)、及W3(y)較佳為滿足下式。 對於長邊 為0.8≦W3(y)≦4.0，更佳為1.0≦W3(y)＜3.5， 對於短邊， 為0.8≦W3(x)≦4.0，更佳為1.0≦W3(x)≦3.0。 如上所述，於將本實施形態之光罩用作顯示裝置製造用光罩之情形時，即，於將本實施形態之光罩與顯示裝置製造用光阻組合使用之情形時，可大幅地減少於被轉印體上與輔助圖案對應之部分之抗蝕膜厚之損耗。 ＜光罩之製造方法＞ 其次，以下，參照圖14(a)～(f)對能夠適用於本發明之實施形態之光罩之製造方法之一例進行說明。再者，於圖14(a)～(f)中，左側表示剖視圖，右側表示俯視圖，並且為了簡化，光罩圖案形狀僅示出第1主圖案及隨附於第1主圖案之輔助圖案。 首先，如圖14(a)所示，準備光罩基底30。於該光罩基底30中，於包含玻璃等之透明基板10上依序形成有相位偏移膜11及低透光膜12，進而塗佈有第1光阻膜13。 相位偏移膜11係形成於透明基板10之主表面上。相位偏移膜11於將i線、h線、g線之任一者設為曝光之光之代表波長時，對於該代表波長之透過率T1(%)較佳為20～80(%)，更佳為30～75(%)，進而較佳為40～75(%)。又，相位偏移膜11對於上述代表波長之相位偏移量為大致180度。藉由此種相位偏移膜11，可將包含透光部之主圖案與包含相位偏移部之輔助圖案之間之透過光之相位差設為大致180度。此種相位偏移膜11使處於i線～g線之波長範圍之代表波長之光之相位偏移大致180度。作為相位偏移膜11之成膜方法，可適用濺鍍法等公知之方法。 較理想為相位偏移膜11滿足上述透過率及相位差，且如下所述，由能夠進行濕式蝕刻之材料形成。但，若於濕式蝕刻時產生之側蝕刻之量變得過大，則會產生CD精度之劣化或因底切導致之上層膜之破壞等欠佳情況。因此，相位偏移膜11之膜厚較佳為設為2000 Å以下，較佳為300～2000 Å，更佳為300～1800 Å。 又，為了滿足該等條件，相位偏移膜11之材料之曝光之光所包含之代表波長(例如h線)之折射率較佳為1.5～2.9，更佳為1.8～2.4。 進而，為了充分地發揮相位偏移效果，較佳為，利用濕式蝕刻所得之圖案剖面(被蝕刻面)相對於透明基板10之主表面接近垂直。 於考慮上述性質時，作為相位偏移膜11之材料，可使用包含Zr、Nb、Hf、Ta、Mo、Ti之任一種及Si之材料或包含該等材料之氧化物、氮化物、氮氧化物、碳化物、或碳氮氧化物之材料。 於相位偏移膜11上形成低透光膜12。作為低透光膜12之成膜方法，與相位偏移膜11之情形同樣地，可適用濺鍍法等公知之方法。又，較佳為相位偏移膜11所具有之相位偏移量之波長依存性對於i線、h線、及g線，變動幅度為40度以內。 低透光膜12可包含實質上不使曝光之光透過之遮光膜。又，除此以外，亦可由對於曝光之光之代表波長具有特定之較低之透過率之膜構成低透光膜12。用於本實施形態之光罩之製造之低透光膜12對於處於i線～g線之波長範圍之代表波長之光具有較相位偏移膜11之透過率T1(%)低之透過率T2(%)。 於低透光膜12以較低之透過率使曝光之光透過之情形時，要求低透光膜12對於曝光之光之透過率及相位偏移量可達成本實施形態之光罩之低透光部之透過率及相位偏移量。較佳為，於相位偏移膜11與低透光膜12之積層狀態下，對於曝光之光之代表波長之光之透過率T3(%)為T3≦20，且相位偏移量f3較佳為90(度)以下，更佳為60(度)以下。 作為低透光膜12之單獨之性質，較佳為實質上不使上述代表波長之光透過者或具有未達30(%)之透過率(T2(%))(即，0＜T2＜30)，且相位偏移量(f2)為大致180度。所謂大致180度，係指120～240度。較佳為相位偏移量f2為150～210(度)。 低透光膜12之材料可為Cr或其化合物(氧化物、氮化物、碳化物、氮氧化物、或碳氮氧化物)，或者，亦可為含有Mo、W、Ta、Ti之金屬之矽化物或該矽化物之上述化合物。但，低透光膜12之材料較佳為能夠與相位偏移膜11同樣地進行濕式蝕刻且對於相位偏移膜11之材料具有蝕刻選擇性之材料。即，較理想為低透光膜12對於相位偏移膜11之蝕刻劑具有耐性，相位偏移膜11對於低透光膜12之蝕刻劑具有耐性。 於低透光膜12上塗佈第1光阻膜13。本實施形態之光罩較佳為藉由雷射描繪裝置而描繪，因此，設為適於雷射描繪裝置之光阻。構成第1光阻膜13之光阻可為正型亦可為負型，但以下設為正型之光阻進行說明。 其次，如圖14(b)所示，對於第1光阻膜13，使用描繪裝置，進行利用基於轉印用圖案之描繪資料之描繪(第1描繪)。繼而，將藉由顯影而獲得之第1抗蝕圖案13p作為遮罩，對低透光膜12進行濕式蝕刻，藉此，形成低透光膜圖案12p。於此階段，劃定成為低透光部之區域，並且劃定由低透光部包圍之輔助圖案(低透光膜圖案12p)之區域。用於濕式蝕刻之蝕刻液(濕式蝕刻劑)可使用適合所使用之低透光膜12之組成之公知者。例如，若低透光膜12係含有Cr之膜，則作為濕式蝕刻劑，可使用硝酸鈰銨等。 其次，如圖14(c)所示，將第1抗蝕圖案13p剝離。藉此，使低透光膜圖案12p、及相位偏移膜11之一部分露出。 其次，如圖14(d)所示，於包含低透光膜圖案12p之整面塗佈第2光阻膜14。 其次，如圖14(e)所示，於對第2光阻膜14進行第2描繪之後，藉由顯影而形成第2抗蝕圖案14p。其次，將第2抗蝕圖案14p及低透光膜圖案12p作為遮罩，對相位偏移膜11進行濕式蝕刻。藉由該蝕刻(顯影)，透明基板10之主表面作為透光部露出，藉此，劃定包含透光部之主圖案之區域。 再者，第2抗蝕圖案14p係覆蓋成為輔助圖案之區域，且於包含透光部之主圖案之區域具有開口者。於此情形時，較佳為以於較第2抗蝕圖案14p之開口緣更靠內側，露出低透光膜圖案12p之邊緣部分之方式，對第2描繪之描繪資料進行定尺寸。如此一來，可吸收於第1描繪與第2描繪之間產生之對準偏移，而防止轉印用圖案之CD精度之劣化。 即，若於第2描繪時進行第2抗蝕圖案14p之定尺寸，則於欲在被轉印體上形成孤立之孔圖案之情形時，不會於相位偏移膜11與低透光膜12之圖案化時產生位置偏移。因此，於如圖1所例示之轉印用圖案中，可使主圖案1及輔助圖案2之重心精密地一致。 用於相位偏移膜11之蝕刻之濕式蝕刻劑係根據相位偏移膜11之組成而適當選擇。 其次，如圖14(f)所示，將第2抗蝕圖案14p剝離。藉此，完成具備轉印用圖案之光罩。再者，圖14中示出了形成無區段之缺損之正八邊形之輔助圖案之情形，但於使八區段中之任一者缺損之情形時，只要於在圖14(b)中劃定輔助圖案之區域時，根據使之缺損之區段之位置及大小變更描繪資料即可。 於上述光罩之製造中，於能夠在使相位偏移膜11或低透光膜12等光學膜圖案化時適用之蝕刻中存在乾式蝕刻或濕式蝕刻。可採用其等之任一個，但於本發明中，濕式蝕刻尤其有利。其原因在於：顯示裝置製造用光罩之尺寸相對較大，進而，存在多種尺寸。於製造此種光罩時，若適用需要真空腔室之乾式蝕刻，則會導致乾式蝕刻裝置之大型化或製造步驟之效率降低。 但，亦存在伴隨著於製造此種光罩時適用濕式蝕刻之課題。濕式蝕刻具有各向同性蝕刻之性質，因此，於在深度方向蝕刻特定之膜而使之溶出時，於對於深度方向垂直之方向亦進行蝕刻。例如，於蝕刻膜厚為F(nm)之相位偏移膜11而形成狹縫時，成為蝕刻遮罩之抗蝕圖案之開口較所需之狹縫寬度小2F(nm)(即，單側F(nm))，但越成為微細寬度之狹縫，則越不易維持抗蝕圖案開口之尺寸精度。因此，將輔助圖案之寬度d設為1 μm以上、較佳為1.3 μm以上較為有用。 又，於上述膜厚F(nm)較大之情形時，側蝕刻量亦變大，因此，使用即便膜厚較小亦具有大致180度之相位偏移量之膜材料較有利。因此，較理想為對於曝光之光之代表波長，相位偏移膜11之折射率較高。具體而言，較佳為使用如對於上述代表波長之折射率較佳為1.5～2.9、更佳為1.8～2.4之材料，形成相位偏移膜11。 本發明包含顯示裝置之製造方法，該顯示裝置之製造方法包含使用本實施形態之光罩藉由曝光裝置而進行曝光，而於被轉印體上轉印上述轉印用圖案之步驟。 本發明之顯示裝置之製造方法係首先準備本實施形態之光罩。其次，使用數值孔徑(NA)為0.08～0.15且具有包含i線、h線、g線之曝光光源之曝光裝置，對上述轉印用圖案進行曝光，而於被轉印體上形成直徑W2為0.8～3.0(μm)之孔圖案。通常於曝光時適用等倍曝光，而較有利。 於使用本實施形態之光罩轉印轉印用圖案時，亦可使用縮小曝光，但作為用於顯示裝置製造用光罩之曝光機，係進行等倍之投影曝光之方式，較佳為以下者。 例如，光學系統之數值孔徑(NA)較理想為0.08≦NA＜0.20，更佳為0.08≦NA≦0.15，進而較理想為0.08＜NA＜0.15。又，同調因子σ為0.4≦σ≦0.9，更佳為0.4＜σ＜0.7，進而較佳為0.4＜σ＜0.6。 曝光光源係使用曝光之光中包含i線、h線及g線之至少一種之光源。於適用單一波長之曝光之光之情形時，較佳為使用i線。另一方面，使用i線、h線、g線均包含之光源(亦稱為寬波長光源)於確保足夠之光量方面較有用。 又，所使用之曝光裝置之光源亦可使用斜光照明(環狀照明等)，但藉由使用不適用斜光照明之通常照明，可充分獲得本發明之優異之效果。 根據本發明，於使用顯示裝置製造用遮罩之顯示裝置之製造方法中，即便係微細之密集圖案，亦可穩定地進行向被轉印體上之轉印。具體而言，可一面確保DOF或MEEF等製造時之製程之裕度(Process Margin)，一面精密地形成孔圖案。進而，於形成密集圖案時，可充分地確保形成於被轉印體上之抗蝕圖案之厚度。其於顯示裝置生產上提高CD精度且提供穩定生產、高良率等產業上之利益。[Design of Mask for Forming Hole Pattern with Auxiliary Pattern] FIG. 1 shows the main part of the transfer pattern of the mask described in Patent Document 1. (a) is a schematic plan view and (b) is (a). Sectional view of AA position. The illustrated transfer pattern of the photomask includes a main pattern 1 including a light transmitting portion, and an auxiliary pattern 2 arranged around the main pattern 1 to surround the main pattern 1. The auxiliary pattern 2 is attached to the main pattern 1 and is arranged around the main pattern 1. A phase shift film 11 and a low-light transmission film 12 are formed on the transparent substrate 10. The main pattern 1 includes a light-transmitting portion 4 exposing the transparent substrate 10, and the auxiliary pattern 2 includes a phase-shifting portion 5 exposing the phase-shifting film 11 on the transparent substrate 10. The low-light-transmitting portion 3 surrounds the main pattern 1 and the auxiliary pattern 2 respectively. The low-light transmission portion 3 includes a laminated film of the phase shift film 11 and the low-light transmission film 12 formed on the transparent substrate 10. The low-light transmission portion 3 may also include a single-layer film of the low-light transmission film 12 formed on the transparent substrate 10. That is, the low-light transmission portion 3 includes a portion where at least the low-light transmission film 12 is formed. In the transfer pattern shown in the figure, a region other than the region where the main pattern 1 and the auxiliary pattern 2 are formed becomes the low-light transmission portion 3. The phase shift film 11 has a phase shift amount that shifts the exposure light at a representative wavelength in a wavelength range of i-line to g-line by approximately 180 degrees. That is, the auxiliary pattern 2 has a function of inverting the phase of transmitted light by the phase shift film 11. The phase shift film 11 has a transmittance of T1 (%) with respect to the exposure light having the above-mentioned representative wavelength. According to Patent Document 1, after performing optical simulation of forming a hole pattern on a transfer target using a mask provided with the above-mentioned transfer pattern, it is apparent that it is compared with a phase shift mask without a binary mask or an auxiliary pattern. In terms of Eop (the amount of exposure light required to form a pattern of a target size on a transfer object) or DOF (Depth of Focus), it has excellent performance. In order to form a finer pattern on an object to be transferred, the inventors performed optical simulation on the photomask shown in FIGS. 2 (a) to (c). Here, the mask shown in FIG. 2 (a) is referred to as Reference Example 1, the mask shown in FIG. 2 (b) is referred to as Reference Example 2, and the mask shown in FIG. 2 (c) is referred to as Reference Example. 3. Then, using each photomask of Reference Examples 1 to 3 having a main pattern including a hole pattern with a diameter W1 of 2.0 μm, a positive photoresist formed on a transfer target (display panel substrate, etc.) was formed to have a diameter equivalent to W2. Simulation of a transfer image of a hole pattern (here 1.5 μm). In addition, as described above, the diameter W1 on the photomask is set to W1 ≧ W2 (preferably W1> W2) with respect to the target diameter W2 on the object to be transferred. Here, if the mask deviation β1 (μm) is set to β1 = W1-W2, β1 is set to 0.5 (μm) here. The conditions of the simulation are as follows. (Reference Example 1) In Reference Example 1, as shown in FIG. 2 (a), a mask including a binary mask is used, and the diameter W1 = 2 μm surrounded by the low-light-transmitting portion (light-shielding portion) 3 is included. The hole pattern of the square light-transmitting portion is set as the main pattern 1. (Reference Example 2) In Reference Example 2, as shown in FIG. 2 (b), using a mask including a halftone type phase shift mask, the transmittance of the exposed light was 5.2% and the phase shift amount A hole pattern including a square light-transmitting portion with a diameter W1 = 2 μm surrounded by a phase shift portion 5 of 180 degrees is set as the main pattern 1. (Reference Example 3) In Reference Example 3, as shown in FIG. 2 (c), a mask including a phase shift mask with an auxiliary pattern was used, and a square light-transmitting portion including a diameter W1 = 2 μm was used. The hole pattern is set as the main pattern 1 and the auxiliary pattern 2 of the regular octagonal band surrounds the periphery of the pattern 1. In addition, the auxiliary pattern 2 includes a phase shift portion having a light transmittance of 45% and a phase shift amount of 180 degrees. The areas other than the main pattern 1 and the auxiliary pattern 2 include low light transmission having an optical density of OD ≧ 2.部 (shielding section) 3. The distance (L) between the center of the main pattern 1 and the center position in the width direction of the auxiliary pattern 2 is set to 3.25 μm, and the width (d) of the auxiliary pattern 2 is set to 1.3 μm. The mask of Reference Example 3 is designed based on the structure described in Patent Document 1. Using each of the photomasks corresponding to the above-mentioned Reference Examples 1 to 3, a hole pattern having a width W2 = 1.5 μm was formed on the object to be transferred. The simulated exposure conditions are as follows. The optical system coefficient of the exposure device has an aperture NA of 0.1 and a coherence factor σ of 0.5. In addition, a light source (wide-wavelength light source) including all i-line, h-line, and g-line was used as the exposure light source, and the intensity ratio was set to g: h: i = 1: 1: 1. The optical evaluation items of the photomask are as follows. (1) Depth of focus (DOF) Depth of focus (DOF) is used to make the CD change relative to the target CD into a specific range (for example, ± 10%) on the transferee when defocus occurs during exposure. The depth of focus within, and ideally, a larger value. If the DOF value is high, it is less likely to be affected by the flatness of the object to be transferred (for example, a panel substrate for a display device), and a fine pattern can be reliably formed to suppress the CD unevenness. In the simulation in this case, as the DOF value, the target CD ± 10% was set as the benchmark. Here, the CD is an abbreviation of Critical Dimension, and is used in the meaning of pattern width. The photomask used in the manufacture of display devices is larger than the photomask used in the manufacture of semiconductor devices. In addition, the size of the transfer target (display panel substrate, etc.) is also large, and it is difficult to obtain complete flatness. Therefore, increasing the DOF value The significance of the mask is great. (2) Mask Error Enhancement Factor (MEEF: Mask Error Enhancement Factor) The mask error enhancement factor is a value that represents the ratio of the CD error of the pattern formed on the transferred object to the CD error on the mask. The lower, the more the CD error of the pattern formed on the transferred body can be reduced. The evolution of the specifications of display devices requires the miniaturization of patterns, and a mask with a pattern close to the resolution limit of the exposure device is required. Therefore, in the masks for display device manufacturing, the possibility of focusing on MEEF in the future is also high. . (3) Eop is included in a photomask for display device manufacturing. Eop (hereinafter also referred to as "Eop dose") is particularly important in evaluation items. Eop is the amount of exposure light required to form the required pattern size on the transferee. The size of the photomask used for the display device is extremely large (for example, one side of the main surface is a square or a rectangle of about 300 to 2000). Therefore, if a mask with a lower Eop value is used, the speed of scanning exposure can be increased, and production efficiency can be improved. The specific evaluation results of the above evaluation items are shown in FIG. 3. First, if focusing on Eop, the exposure amount (Eop value) of the mask of Reference Example 3 used to obtain the target size hole pattern is smaller than 30% compared with the masks of Reference Examples 1 and 2. Therefore, it can be seen that if the photomask of Reference Example 3 is used, higher production efficiency can be obtained. In addition, the mask of Reference Example 3 has a higher DOF value and a lower MEEF value than those of Reference Examples 1 and 2. Therefore, it can be seen that the mask of Reference Example 3 is also extremely advantageous in DOF or MEEF. [Design of hole patterns in positions close to each other] On the other hand, if the resolution required for a display device is increased, the integration degree is increased due to an increase in the number of pixels per unit area. Therefore, as a transfer pattern for a mask for manufacturing a display device, a plurality of main patterns (hole patterns) must be arranged close to each other. In the following, the case where the photomask of Reference Example 3 described above is applied to the formation of a dense pattern including a plurality of main patterns will be studied. FIG. 4 shows a case where the patterns (combining the main pattern and the auxiliary pattern formed on the periphery thereof, which is also referred to as a pattern for hole formation) applied to the above-mentioned Reference Example 3 are arranged close to each other. Here, one of the two main patterns is set as a first main pattern 1a, and the other is set as a second main pattern 1b. Next, when the position of the second main pattern 1b is approached from the direction of the arrow with respect to the first main pattern 1a, the hole pitch P, which is the distance between the centers of gravity of the two main patterns 1a, 1b, and the resistance formed on the object to be transferred will be examined. The cross-sectional shape of the etch pattern. First, as shown in FIG. 5 (a), when the first main pattern 1a and the second main pattern 1b are sufficiently separated (P = 12 μm), as shown in FIG. 5 (b), The above resist pattern (here, a pattern including a positive-type photoresist) 20 forms a hole pattern 21a, 21b corresponding to each of the main patterns 1a, 1b. On the other hand, as shown in FIG. 6 (a), when the second main pattern 1b approaches the first main pattern 1a (P = 8 μm), auxiliary patterns arranged around the main patterns 1a and 1b The distance between 2a and 2b becomes extremely close. At this time, if the cross-section of the resist pattern 20 formed on the object to be transferred is observed, as shown in FIG. 6 (b), except for the hole patterns 21a and 21b corresponding to the main patterns 1a and 1b, Since the recessed portion 22 is formed in the middle portion, a large loss in the thickness of the resist film occurs. The local reduction of such a resist residual film may cause a bad influence on the processing stability of a display device substrate using a resist pattern as an etching mask. Therefore, the present inventors have favorable characteristics for Eop or DOF, but the pattern for hole formation of Reference Example 3, which has a disadvantage such as the local reduction of the resist residue film as described above, has been studied to eliminate the defect The best mask. <Structure of Mask> Next, the structure of a mask for manufacturing a display device according to an embodiment of the present invention will be described. The photomask for manufacturing a display device according to the embodiment of the present invention is a person having a pattern for transfer on a transparent substrate, and the pattern for transfer includes: a main pattern including a light-transmitting portion of a quadrangle; an auxiliary pattern disposed on the above The periphery of the main pattern including a phase shift portion; and a low-light transmission portion formed in a region other than the main pattern and the auxiliary pattern; and a regular eight-sided area defining a specific width of the main pattern in a periphery defining the main pattern In the case of a belt, the auxiliary pattern constitutes at least a part of the regular octagonal belt. When one of the plurality of main patterns included in the transfer pattern is set as a first main pattern, it is different from the first main pattern. The second main pattern is disposed close to the first main pattern, and among the eight segments of the regular octagonal band that surrounds the first main pattern, one of the segments facing the second main pattern has a defect. The auxiliary pattern is arranged around the first main pattern. Hereinafter, it demonstrates concretely using FIG. 7. FIG. FIG. 7 is a view showing a main part of a transfer pattern provided in a mask for manufacturing a display device according to an embodiment of the present invention, (a) is a schematic plan view, and (b) is a cross-sectional view of a position BB of FIG. Illustration. The above-mentioned photomask for manufacturing a display device (hereinafter also simply referred to as a “photomask”) includes, for example, a transfer film formed by patterning a phase shift film 11 and a low-light transmission film 12 formed on a transparent substrate 10 respectively. pattern. This transfer pattern includes a main pattern 1 (1a, 1b) and an auxiliary pattern 2 (2a, 2b) arranged around the main pattern 1. The auxiliary pattern 2 has a shape constituting at least a part of the regular octagonal band when defining a regular octagonal band of a specific width surrounding the main pattern 1. There are two main patterns 1 arranged in the X direction, one of which becomes the first main pattern 1a and the other becomes the second main pattern 1b. An auxiliary pattern 2a is arranged around the first main pattern 1a, and an auxiliary pattern 2b is arranged around the second main pattern 1b. In addition, in FIG. 7 (a), the main pattern on the left is set as the first main pattern, and the main pattern on the right is set as the second main pattern, but any of them may be set as the first main pattern. In this embodiment, the main pattern 1 includes a light-transmitting portion 4 exposing the transparent substrate 10, and the auxiliary pattern 2 includes a phase-shifting portion 5 exposing the phase-shifting film 11 on the transparent substrate 10. The areas other than the main pattern 1 and the auxiliary pattern 2 are low-light-transmitting portions 3 having at least a low-light-transmitting film 12 formed on the transparent substrate 10. In this embodiment, the low-light transmission portion 3 is formed by laminating the phase shift film 11 and the low-light transmission film 12 on the transparent substrate 10. The phase shift film 11 has a phase shift amount that shifts the exposure light at a representative wavelength in a wavelength range of i-line to g-line by approximately 180 degrees. The transmittance of the phase shift film 11 with respect to the exposure light having the aforementioned representative wavelength is T1 (%). The low-light transmission film 12 can be set to have a specific low transmittance for a representative wavelength of the exposed light. In this embodiment, the low-light-transmitting film 12 may have a lower transmittance T2 (lower transmittance T2 (%) than that of the phase-shifting film 11 for exposure light having a representative wavelength in a wavelength range of i-line to g-line). %). Alternatively, the low-light-transmitting film 12 may be a light-shielding film that does not substantially transmit the light of exposure. Here, when a fine pattern (hole pattern) corresponding to the main pattern 1 of the mask is formed on the object to be transferred by exposure using a mask, if the diameter W1 of the main pattern 1 is set to 4 Below μm, a fine pattern with a diameter W2 (μm) (where W1 ≧ W2, and more preferably W1> W2) can be formed on the object to be transferred. Specifically, the diameter W1 (μm) of the main pattern 1 is preferably 0.8 ≦ W1 ≦ 4.0, and more preferably 1.0 ≦ W1 ≦ 3.5. Furthermore, it can be set to 1.2 <W1 ≦ 3.0, and when it is necessary to further refine, it can be set to 1.2 <W1 <2.5. In addition, the diameter W2 (μm) of the hole pattern formed on the transferred body as the transfer image of the main pattern 1 is preferably 0.8 ≦ W2 ≦ 3.0, more preferably 0.8 ≦ W2 ≦ 2.5, and even more preferably 0.8. ≦ W2 ≦ 2.0 or 0.8 ≦ W2 ≦ 1.8. Alternatively, it may be set to 0.8 <W2 <2.0 or 0.8 <W2 <1.8. When it is necessary to further reduce the size, it can be set to 0.8 <W2 <1.5. The photomask of this embodiment can be used for the purpose of forming a fine-sized pattern useful for the manufacture of a display device. For example, when the diameter W1 of the main pattern 1 is 3.0 (μm) or less, a more significant effect can be obtained. However, in a photomask (for example, the above-mentioned reference examples 1 to 3) in which a hole pattern needs to be formed on a target, it is advantageous to impart the mask deviation β1 as described above. That is, if the diameter of the hole pattern on the photomask is set to W1 and the diameter of the hole pattern formed on the body to be transferred is set to W2, W1 = W2 may also be used, but W1> W2 is preferred. For example, if β1 (μm) is set as the deviation value (W1-W2) and β1> 0 (μm), the deviation value β1 (μm) is preferably 0.2 ≦ β1 ≦ 1.0, and more preferably 0.2 ≦ β1 ≦ 0.8 . As described above, by setting the relationship between the diameter W1 and the diameter W2 as the deviation value β1, it is possible to obtain advantageous effects such as reducing the loss of the film thickness of the resist pattern on the transfer target. Furthermore, the main pattern 1 includes a quadrangular pattern, and the diameter W1 of the main pattern 1 is the size of one side of the quadrilateral. For example, if the main pattern 1 is a square pattern, the diameter W1 of the main pattern 1 refers to the size of one side of the square, and if the main pattern 1 is a rectangular pattern, the diameter W1 refers to the length of the long side. The shape of the main pattern 1 refers to the shape when the main pattern 1 is viewed in plan. Further, the diameter W2 of the hole pattern formed in the body to be transferred refers to the length of the portion having the largest distance between the two opposing sides. The mask deviation β1 as described above can also be given to the mask of this embodiment. In this embodiment, since the two hole-forming patterns are formed close to a specific distance, the size given as the mask deviation β1 may be larger than the isolated patterns (the above-mentioned reference examples 1 to 3, etc.). Furthermore, it is preferable that the mask of this embodiment is provided with a mask deviation of an uneven size with respect to the X direction and the Y direction perpendicular thereto based on the positional relationship of the two hole formation patterns arranged close to each other. Therefore, such a mask deviation is assumed to be β2, and the deviation amounts given to the X direction and the Y direction perpendicular thereto are respectively β2 (x) and β2 (y). The details of the mask deviation β2 will be described later. With respect to the representative wavelength of the exposure light used for the exposure of the photomask having the above-described pattern for transfer, the phase difference f between the main pattern 1 and the auxiliary pattern 2 is approximately 180 degrees. That is, the phase difference f1 between the light having the above-mentioned representative wavelength transmitted through the main pattern 1 and the light having the above-mentioned representative wavelength transmitted through the auxiliary pattern 2 becomes approximately 180 degrees. Approximately 180 degrees means 120 to 240 degrees. The phase difference f1 is preferably 150 to 210 degrees. Furthermore, the photomask of this embodiment has a significant effect when using at least one type of exposure light including i-line, h-line, and g-line. In particular, it is preferable to apply i-line, h-line, and g-line. The wide-wavelength light is used as the exposure light. In this case, any one of the wavelengths in the wavelength range of the i-line to the g-line may be set as the representative wavelength. For example, the h-line may be used as a representative wavelength to form the mask of this embodiment. More preferably, the phase difference f1 for the representative wavelength is f1 = 180 degrees. In the photomask of this embodiment, in order to realize the above-mentioned phase difference, as long as the main pattern 1 is a light-transmitting portion 4 formed by exposing the main surface of the transparent substrate 10, the auxiliary pattern 2 is set as a light-transmitting portion 4 formed on the transparent substrate 10. For the phase shift section 5 formed by exposing the phase shift film 11, the phase shift amount of the phase shift film 11 with respect to the representative wavelength may be approximately 180 degrees. The transmittance T1 of the phase shift section 5 can be set as described below. That is, if the transmittance of the phase shift film 11 formed in the phase shift section 5 to the representative wavelength is T1 (%), it is preferably 20 ≦ T1 ≦ 80, and more preferably 30 ≦ T1 ≦ 75. It is more preferably 40 ≦ T1 ≦ 75. If the transmittance of the auxiliary pattern 2 is high, in order to obtain a specific amount of transmitted light, the auxiliary pattern width (d) can be reduced. Therefore, it has the advantage of obtaining the freedom of arrangement that can avoid mutual physical interference in dense patterns. . On the other hand, if the transmittance T1 is slightly reduced and the auxiliary pattern width (d) is increased, there is an advantage that the difficulty in manufacturing the pattern can be eased. In this case, the transmittance T1 is preferably 40 to 60 (%). In addition, the transmittance T1 (%) here is set to the transmittance of the above-mentioned representative wavelength when the transmittance of the transparent substrate 10 is based on (100%). In the mask of this embodiment, a low-light-transmitting portion 3 is formed in a region other than a region where the main pattern 1 and the auxiliary pattern 2 are formed. Here, the main pattern 1 and the auxiliary pattern 2 are separated by the low-light-transmitting portion 3. The low-light-transmitting portion 3 can be configured as follows. The low-light-transmitting portion 3 is a light-transmitting low-light-transmitting film (ie, a light-shielding film) 12 that is substantially impermeable to light (light in the wavelength range of the i-line to the g-line) and can be set on the transparent substrate 10 A film formed by forming a film having an optical density OD ≧ 2 (preferably OD ≧ 3). The low-light-transmitting portion 3 may be formed by forming a low-light-transmitting film 12 that transmits exposed light at a specific range of transmittance. However, in the case where the exposed light is transmitted with a transmittance in a specific range, the transmittance T3 (%) of the low-light-transmitting portion 3 for the representative wavelength is set to the transmittance T1 (%) of the phase shift portion 5. If 0 <T3 <T1 is satisfied, it is preferable to satisfy 0 <T3 ≦ 20. Here, in a case where the phase shifting portion 5 is a single-layer film including a phase shifting film 11 instead of a single-layer film including the phase shifting film 11, the transmittance of the multilayer film is set as T3 (%). The transmittance T3 (%) here is also set to the transmittance of the above-mentioned representative wavelength when the transmittance of the transparent substrate 10 is used as a reference in the same manner as described above. In addition, when such a low-light-transmitting film 12 transmits exposed light with a specific range of transmittance, the phase shift amount f3 in the laminated state of the phase-shifting film 11 and the low-light-transmitting film 12 is preferably 90. (Degrees) or less, more preferably 60 (degrees) or less. The term "less than 90 degrees" means that when expressed in radians, the phase difference is "(2n-1 / 2) π to (2n + 1/2) π (where n is an integer)". Regarding the phase difference, as described above, it is assumed that the phase difference is for a representative wavelength included in the exposed light. In addition, as a separate property of the low-light-transmitting film 12 used in the photomask of this embodiment, it is preferable that the above-mentioned representative wavelength light is not substantially transmitted (OD ≧ 2, more preferably OD> 3), or It has a transmittance (T2 (%)) of less than 30 (%) (that is, 0 <T2 <30) and the phase shift amount (f2) is approximately 180 degrees. The term "approximately 180 degrees" means 120 to 240 degrees. The phase shift amount f2 is preferably 150 to 210 degrees. The transmittance T2 (%) here is also set to the transmittance of the above-mentioned representative wavelength when the transmittance of the transparent substrate 10 is used as a reference in the same manner as described above. In the transfer pattern of this embodiment, if the width of the auxiliary pattern 2 is set to d (μm), a significant effect can be obtained when the relationship of the following formula (1) is established. 0.5 ≦ √ (T1 / 100) × d ≦ 1.5 ... (1) At this time, if the distance between the center of the main pattern 1 and the center of the auxiliary pattern 2 in the width direction is set as the slit pitch L (μm), It is preferably 1.0 <L ≦ 5.0, and more preferably 1.5 <L ≦ 4.5. However, the auxiliary pattern 2 constitutes at least a part of a region of the regular octagonal band surrounding the main pattern 1 with the low-light-transmitting portion 3 interposed therebetween. Therefore, in a manner that the main pattern 1 and the auxiliary pattern 2 are not in contact with each other, that is, on the condition that the low-light-transmitting portion 3 is interposed between the main pattern 1 and the auxiliary pattern 2, the slit pitch L and the main pattern Diameter W1. The width d (μm) of the auxiliary pattern 2 is set so that the auxiliary pattern having the transmittance T1 is not resolved under the exposure conditions (exposure device used) suitable for the mask of this embodiment. To give specific examples, the width d (μm) of the auxiliary pattern 2 is preferably d ≧ 0.7, and more preferably d ≧ 0.8. In addition, when compared with the width W1 (μm) of the main pattern 1, it is preferably d ≦ W1, and more preferably d <W1. Regarding the width d (μm) of the auxiliary pattern 2, the relational expression represented by the above-mentioned formula (1) is more preferably the following formula (1) -1, and more preferably the following formula (1) -2. 0.7 ≦ √ (T1 / 100) × d ≦ 1.2 ・ ・ ・ (1) －1 0.75 ≦ √ (T1 / 100) × d ≦ 1.0 ・ ・ ・ (2) -2 The transfer pattern of this embodiment is provided The shape of the main pattern 1 is a quadrangle. Specifically, the shape of the main pattern 1 is preferably a square or a rectangle, for example. When the shape of the main pattern 1 is a quadrangle, the distance between the position of the center of gravity of the quadrangle and the center in the width direction of the auxiliary pattern 2 is the slit pitch L. In this embodiment, when a regular octagonal band of a specific width is defined to surround the main pattern 1 around the main pattern 1, the auxiliary pattern 2 becomes a pattern constituting at least a part of the regular octagonal band. The so-called regular octagonal band refers to a shape in which the outer and inner peripheries are both octagonal and have a substantially constant width. As shown in FIG. 7, the auxiliary pattern 2 has a fixed width other than the corner portions. The regular octagonal band defining the auxiliary pattern 2 is arranged around the main pattern 1 so as to surround the main pattern 1. Moreover, the center of gravity of the regular octagon of the inner contour and the outer contour of the auxiliary pattern 2 is located at the same position as the center of gravity of the main pattern 1. In this embodiment, for convenience of explanation, as shown in FIG. 8, the regular octagonal band is divided into eight sections corresponding to each side of the octagon of the outer periphery (or inner periphery). Here, the section on the right end of FIG. 8 among the sections divided into 8 is set as section A, the section adjacent to the upper side is set as section H, and the lower section is set as section. B. That is, the blocks B, C, D, E, F, G, and H are set clockwise from the block A. As shown in FIG. 4 described above, when the second main pattern 1b is arranged close to the first main pattern 1a, in this embodiment, the regular octagonal band is formed by being arranged around the first main pattern 1a. Among the eight segments A to H, the auxiliary pattern 2a having a defective shape in one of the segments facing the second main pattern 1b side. Specifically, as shown in FIG. 7 (a), an auxiliary pattern 2 a having a partial segment defect in an octagonal band is arranged around the first auxiliary pattern 1 a. As shown in the figure, the auxiliary pattern 2a attached to the first main pattern 1a has a defect shape on the side facing the second main pattern 1b, that is, on the right end (corresponding to the above-mentioned section A). In addition, the auxiliary pattern 2b attached to the second main pattern 1b also has a defect shape in a section (corresponding to the section E) facing the first main pattern 1a side. That is, the two main patterns have auxiliary patterns in the shape of an octagonal band, each of which has a defect in a section located on the side facing each other. That is, in a case where the two hole-forming patterns are arranged at a close distance that is equal to or less than a specific distance, the auxiliary pattern included in each main pattern is missing between the two main patterns. Therefore, if the centers of gravity of the two main patterns are connected by a straight line (not shown), the straight line does not pass through the auxiliary pattern at all. Furthermore, it is preferable that the auxiliary pattern is not substantially arranged in the region S (shown by a dotted line in FIG. 7 (a)) sandwiched between the opposing sides of the two main patterns. However, when a part of the auxiliary pattern enters the region S, it is preferable that the part does not have a side parallel to the mutually opposing sides of the two main patterns. In the aspect shown in FIG. 7, the end portion of the auxiliary pattern enters the region S, but the end portion has only a side inclined to the opposite sides of the two main patterns. In addition, it is preferable that an auxiliary pattern of an island shape (a shape surrounded by a closed straight line or a curve) does not exist in the region S. Furthermore, it is preferable that 90% or more of the area in the area S includes a low-light-transmitting portion. Thereby, the shape of the resist pattern of the two hole patterns formed on the body to be transferred becomes favorable, and the loss of the thickness of the resist residual film can be suppressed. If the auxiliary patterns 2a and 2b with partial segment defects are arranged in this way, the loss of the resist film thickness caused by the recessed portion 22 shown in FIG. 6 (b) described above is eliminated as shown in FIG. 9 and has a good profile. The shape of the resist pattern. 6 (b) and FIG. 9 are cases where the hole pitch P is 8 μm. The allowable range of the loss of the thickness of the resist film observed in FIG. 6 (b) can be determined according to the manufacturing conditions and the like of the display device to be obtained using the photomask. If the initial film thickness (coating film thickness) of the resist film is 100%, the allowable range of the loss is 10% or less of the initial film thickness, more preferably 5% or less, which is a good condition. Therefore, in this embodiment, whether or not the auxiliary patterns 2a and 2b attached to the main patterns 1a and 1b which are close to each other are partially damaged, as long as the loss amount of the resist film thickness is grasped in advance through experiments or simulations, and based on this, Just judge the results. Specifically, it is useful to make a judgment in such a manner that, when the loss of the resist thickness exceeds 10%, for example, a part of the auxiliary patterns 2a and 2b is defective, and when the loss is less than 10%, the auxiliary pattern 2a and 2b are not caused. The auxiliary patterns 2a, 2b are defective. Furthermore, when the second main pattern 1b is arranged close to the first main pattern 1a, it is more preferable when the distance D (see FIG. 4) between the auxiliary patterns 2a and 2b is 1.0 μm or less. The segment of the auxiliary pattern 2a disposed on the periphery of the first main pattern 1a facing the side of the second main pattern 1b (the segment A described above) is defective. Similarly, it is preferable that an auxiliary pattern 2b is formed in the second main pattern 1b so that a segment facing the first main pattern 1a (the aforementioned segment E) is defective. Furthermore, it is more preferable that the defect of the segment is applied when the distance D between the auxiliary patterns 2a and 2b is 1.5 μm or less. The above case is exemplified in view of the resolution performance of the exposure device for a display device. In addition, the distance between the auxiliary patterns as shown in FIG. 4 refers to the distance (the length of the vertical line) between the opposing sections. Therefore, as shown in the figure, when the two main patterns 1a, 1b are arranged adjacent to each other in a certain direction, and each main pattern 1a, 1b is surrounded by the corresponding (included) auxiliary patterns 2a, 2b, In the arrangement direction of the two main patterns 1a and 1b, the distance between the opposing (or facing) sides of the auxiliary patterns 2a and 2b becomes the distance D between the auxiliary patterns. Moreover, when the hole pitch P which is the distance between the centers of gravity of the main patterns 1a and 1b is 1.6 μm or more, and preferably 3 μm or more, the photomask of this embodiment can obtain a significant effect of the present invention. If the value of the hole pitch P is too small, there is a risk that a poor condition may occur, that is, a case where the amount of residual film of the resist pattern formed at a position corresponding to the two main patterns may not be sufficiently obtained, or the following mask The value of the deviation β2 becomes too large, and pattern design becomes difficult. The optical simulations of the examples and reference examples of the present invention will be described below. Fig. 10 is a schematic plan view showing a main part of a transfer pattern provided in a mask of a reference example, (a) shows reference example 4, (b) shows reference example 5, (c) shows reference example 6, and (d ) Indicates Reference Example 7, and (e) indicates Reference Example 8. FIG. 11 is a schematic plan view showing a main part of a transfer pattern provided in a photomask according to an embodiment of the present invention, (f) shows embodiment 1, (g) shows embodiment 2, and (h) shows embodiment 3. FIG. (I) represents Example 4. Fig. 10 (a) shows a case where the hole pitch P (refer to Fig. 5 to Fig. 7) of the main patterns 1a and 1b is 16 μm and the auxiliary patterns 2a and 2b of the regular octagonal band have no segmental defects. Fig. 10 ( b) shows the case where the hole pitch P of the main patterns 1a and 1b is 12 μm and the auxiliary patterns 2a and 2b have no segment defects. Fig. 10 (c) shows the case where the hole pitch P of the main patterns 1a and 1b is 9 μm and the auxiliary patterns 2a and 2b have no segment defects. Fig. 10 (d) shows the hole pitch P of the main patterns 1a and 1b as 8.75 μm and the auxiliary patterns 2a and 2b have no segment defects. FIG. 10 (e) shows a case where the hole pitch P of the two main patterns 1a and 1b is 8.75 μm, and a section of each of the auxiliary patterns 2a and 2b is combined and shared. On the other hand, FIG. 11 (f) shows the case where the hole pitch P of the main patterns 1a and 1b is 8.75 μm and the auxiliary patterns 2a and 2b are missing by one segment. FIG. 11 (g) shows the hole pitch of the main patterns 1a and 1b. A case where P is 8 μm and the auxiliary patterns 2a and 2b are missing by one segment. 11 (h) shows the case where the hole pitch P of the main patterns 1a and 1b is 7.5 μm and the auxiliary patterns 2a and 2b are missing by one segment. FIG. 11 (i) shows the hole pitch P of the main patterns 1a and 1b as 7 μm and the auxiliary patterns 2a and 2b are missing three sections. In this simulation, the case where the mask (binary mask) shown in FIG. 2 (a) is used is referred to as Reference Example 1, and the mask (halftone) shown in FIG. 2 (b) is used. In the case of the phase shift mask), reference example 2 is used. The main patterns applicable to Reference Examples 1 and 2 are isolated patterns without auxiliary patterns. Optical simulation was performed on the patterns of each of the photomasks, and the results shown in FIG. 12 were obtained. In this simulation, in addition to Reference Example 1 and Reference Example 2, 80 mJ / cm was used as the exposure energy for the transfer of the main pattern (isolated pattern) shown in FIG. 2 (c) above. 2 The dose (Eop dose) was used as a reference to evaluate the resist pattern formed on the transfer target when the dose was applied. In addition, "panel X-CD" and "panel Y-CD" are dimensions of the X-direction and Y-direction of the hole pattern formed on the body to be transferred in correspondence with the main pattern of the photomask. Moreover, in each reference example and each Example, the target size of X-CD and Y-CD was set to 1.5 micrometers. First, in Reference Example 4 of FIG. 10 (a), the two main patterns 1 a and 1 b are sufficiently separated from each other. Therefore, each of the main patterns 1 a and 1 b exhibits substantially the optical performance as an isolated pattern. This aspect is also the same as in Reference Example 5 of FIG. 10 (b) or Reference Example 6 of FIG. 10 (c). On the other hand, if the two main patterns 1a and 1b are close and the hole pitch P is narrowed to 8.75 μm as in Reference Example 7 of FIG. 10 (d), the distance D between the auxiliary patterns 2a and 2b becomes 0.95 μm. At this time, the loss of the resist film thickness exceeds 12%. Here, as in Reference Example 8 of FIG. 10 (e), when the auxiliary patterns 2a, 2b of the main patterns 1a, 1b which are close to each other are locally joined to each other (segment 1) and shared, The loss of the resist film thickness is also close to 12%, with almost no improvement. According to the research of the present inventors, this problem is considered to be related to a photoresist suitable for manufacturing a display device. Specifically, it is designed in such a manner that a photoresist (positive photoresist) used for manufacturing a display device is different from a photoresist used for manufacturing a semiconductor device and has a high sensitivity. Therefore, the corresponding film reduction has not been avoided in the relatively low dose, and it is easy to cause the loss of local film thickness in the unexpected part. Furthermore, the interaction between the main pattern 1 and the auxiliary pattern 2 generated in the mask of Reference Example 3 is to use an optical image formed by the light of the reversed phase transmitted through the auxiliary pattern 2 to improve the light generated by the transmitted light of the main pattern 1. The phenomenon of peak light intensity. Moreover, excellent transfer performance (DOF, MEEF) shown in FIG. 3 was obtained. On the other hand, the light intensity due to the light passing through the auxiliary pattern is also slightly increased by the interaction with the main pattern 1. It is considered that the sensitivity of the photoresist used in the manufacture of display devices is high. Therefore, except for the case where the auxiliary patterns 2 are close to each other, if the auxiliary patterns 2 are shared by a plurality of main patterns 1, transmission of the auxiliary patterns 2 will occur. There is a risk that light may reduce the thickness of the resist on the transferred body. On the other hand, in Example 1 of FIG. 11 (f), one of the eight segments constituting a regular octagonal band surrounding the first main pattern 1a is missing from a segment facing the second main pattern 1b side, and will have The auxiliary patterns 2a of the remaining 7 sections are arranged around the first main pattern 1a. That is, the shape of the auxiliary pattern 2a in which the segment of the regular octagonal band that surrounds the periphery of the first main pattern 1a and the portion facing the regular octagonal band that surrounds the periphery of the second main pattern 1b is the shape of the auxiliary pattern 2a is set. . In the same way, the second main pattern 1b is similarly defective in a section facing the first main pattern 1a side, and the auxiliary pattern 2b having the remaining seven sections is arranged around the second main pattern 1b. Furthermore, when the section of the auxiliary pattern is defective, it is not necessary to cut it according to the boundary line of the section shown in FIG. 8, for example, as shown in FIG. 7 (a), as long as at least a major part of the section is defective, can. Regarding the area of the defective portion, for example, if one of the eight sections is defective, it is preferably set to be 80% or more of the area of one section, and the area is set to be a defective section. More than 80% of the area. At this time, a portion interposing only the low-light-transmitting portion 3 is generated between the two main patterns, and a straight line connecting the centers of gravity of the two main patterns 1a and 1b does not pass through the auxiliary pattern. In this way, it can be seen that in the case where the sections opposite to each other in the auxiliary patterns of the two main patterns are damaged, the loss of the thickness of the resist film in the formed resist pattern becomes zero, etc., and the loss is greatly reduced. Significant results can be obtained. In addition, it can be seen that the same effect is obtained when the two main patterns 1a and 1b are brought closer to each other as in Example 2 (g) in Example 2 or Figure 11 (h) (hole pitch P = 8 μm, P = In the case of 7.5 μm). The cross-sectional structure of the resist pattern in this case is the same as that of FIG. 9. However, in the embodiment of FIGS. 11 (f) to (i), although the same exposure dose as that of the above reference examples 4 to 8 is applied, the diameter of the hole pattern transferred to the resist film is slightly changed from the initial target size. small. Specifically, in Example 1, the X-CD (diameter in the X direction) was 1.39 (μm) and the Y-CD (diameter in the Y direction) was 1.37 with respect to 1.5 (μm) as the initial target size. (μm). Therefore, in order to form the hole pattern so that X-CD and Y-CD on the transferee are close to the target size (1.5 μm), it is more preferable that the mask deviation β1 is greater than 0.5 μm. Furthermore, in order to set X-CD and Y-CD on the transfer target equally to the target size (1.5 μm), it is preferable to provide appropriate mask deviation β2 in the X direction and the Y direction, respectively. Therefore, as shown in FIG. 12, in the embodiment of FIGS. 11 (f) to (h), by giving appropriate mask deviations β2 (x), β2 (y) to the CD on the mask, the On the transfer body, X-CD and Y-CD both achieved 1.5 μm as a target size. In addition, as a result, it can be seen that in the case of the photomask of the embodiment of FIGS. 11 (f) to (h), the DOF (depth of focus) value (24) is higher than the binary mask of Reference Example 1 (FIG. 2 (a)). ) Or the halftone-type phase shift mask of Reference Example 2 (FIG. 2 (b)) is large, and a hole pattern of a desired diameter can be stably formed on the transfer target. In addition, since the Eop dose required for exposure is smaller than that of the binary mask of Reference Example 1 or the half-tone phase shift mask of Reference Example 2, the exposure step can be performed efficiently. Furthermore, in the embodiment of FIGS. 11 (f) to (h), the eighth section of the auxiliary pattern 2a attached to the first main pattern 1a and the eighth section of the auxiliary pattern 2b attached to the second main pattern 1b are made. One of the segments facing each other is defective. That is, for one main pattern 1, the number of segments of the auxiliary pattern 2 is set to seven. On the other hand, when the two main patterns 1a and 1b are arranged closer to each other, it is also possible to use the section that has been damaged as the center, and further cause the sections on both sides thereof to be damaged. For example, in Embodiment 4 of FIG. 11 (i), the section A of the eight sections of the auxiliary pattern 2a attached to the first main pattern 1a, and the sections B and H located on both sides of the section are defective. In addition, the section E in the eight sections of the auxiliary pattern 2b attached to the second main pattern 1b and the sections D and F located on both sides of the section are defective, thereby setting the loss of the resist film thickness to zero. . As a result, here, three segments are defective for one main pattern 1, and thereby the number of segments of the auxiliary pattern 2 is set to five. Furthermore, the number of the main patterns arranged close to each other is not limited to two, and a plurality of hole-forming patterns may be arranged at a close distance. In this case, the defects of the sections may be designed in the same manner as described above. In a pattern group including a plurality of main patterns arranged close to each other (at least close to any other one), when the number of main patterns included is set to N and the total number of sections of the auxiliary pattern is set to K, It is set to K ≦ (8-1) N. In addition, in FIGS. 11 (f) to (i), only the case where the second main pattern 1b approaches the first main pattern 1a in the X direction (left and right directions in the figure) is illustrated, but it approaches the Y main direction. In this case, the auxiliary pattern 2 that causes any of the eight segments to be defective may be arranged in the same manner as described above. Furthermore, the present invention can also be effectively applied to a case where the diagonal direction of the second main pattern 1b with respect to the first main pattern 1a of the autonomous pattern 1 is close, such as when the self-tilt direction is close. In this case, it is only necessary to make at least one segment of the eighth segment of the auxiliary pattern 2a attached to the first main pattern 1a facing the side of the second main pattern 1b defective. In the case where the third main pattern and the fourth main pattern are arranged close to the first main pattern, the eight main sections of the auxiliary patterns provided to each main pattern may be aligned with each other in the same manner as described above. The section to the side is missing. In this case, according to the relative arrangement of the plurality of main patterns, in addition to the main pattern having a seven-segment auxiliary pattern and the main pattern having a five-segment auxiliary pattern, there may also be six-segment and four-segment The main pattern of the auxiliary pattern of three, two, and one segments. For example, it may be a pattern group in which two main patterns mutually have an auxiliary pattern in which one segment is defective one by one, or a pattern group in which each of the auxiliary patterns is defective with three sub-fields each. Alternatively, it may be a pattern group in which the three main patterns have auxiliary patterns with missing 1 or 2 segments, respectively, according to their arrangement (X direction, Y direction, or X and Y directions, the same applies hereinafter). Furthermore, it is also possible to set a pattern group in which the four main patterns each have an auxiliary pattern with 1 to 5 segments missing according to the arrangement. In the following, it is also possible to set a pattern group in which 5 or 6 or 7 main patterns have auxiliary patterns with defects of 1 to 6 segments according to their arrangement, or 8 main patterns with defects 1 to 7 respectively according to their arrangement. The pattern group of the auxiliary pattern of the segment. On the other hand, the auxiliary pattern of one main pattern can be set to be non-defective except for a section facing the side of the other main pattern or a section on both sides thereof. Further, depending on the approach directions of the plurality of hole-forming patterns, the diameters of the hole patterns formed on the body to be transferred may have different values in the X direction and the Y direction. The reason is that the optical image changes due to the defect of a part of the auxiliary pattern are unevenly generated in the X direction and the Y direction. Therefore, for the purpose of compensating the influence of uneven optical images in the X and Y directions, it is more useful to impart masking deviation β2 of a size different in the X and Y directions to the drawing data of the pattern. For example, as shown in FIG. 7 (a), the first main pattern 1a and the second main pattern 1b are arranged in the X direction, and the auxiliary patterns 2a and 2b attached to the two main patterns 1a and 1b face each other. When the segment (ie, the segment extending in the Y direction) is defective, the mask deviation β2 (μm) given to the dimensions of the first main pattern 1a and the second main pattern 1b is given in the X direction. When the amount is β2 (x) and the amount provided in the Y direction is β2 (y), β2 (y)> β2 (x) can be set. Specifically, in the autonomous pattern observation, a deviation β2 of a positive value is given in a direction (Y direction in Fig. 7 (a)) perpendicular to the direction (X direction in Fig. 7 (a)) in which the auxiliary pattern is present. y). Further, if necessary, a deviation β2 (x) of a negative value is provided in the direction (X direction in FIG. 7 (a)) in which the defective portion of the auxiliary pattern is present. An example of a transfer pattern including a mask including the main patterns 1a and 1b provided with the mask deviation β2 in this manner is shown in FIG. 13. Here, as a result of providing the above-mentioned mask deviation β2, the size in the X direction of the main patterns 1a, 1b is smaller than the size in the Y direction, and the shape of the main patterns 1a, 1b becomes a vertically long rectangle. In the example of FIG. 11 (g), the transfer images of the main patterns 1a, 1b, which are square, are formed in the pattern of the holes on the transferee to become horizontally long rectangles (X-CD = 1.40 μm, Y-CD = 1.37 μm). Therefore, if the shape of the main patterns 1a and 1b is set to be a vertically long rectangle by the mask deviation, the error of the pattern size caused by the defect of a part of the auxiliary patterns 2a and 2b can be eliminated. As a result, a hole pattern having a size in the X direction and a size in the Y direction can be formed on the transfer target. Therefore, by optical simulation, for each of the X direction and the Y direction, the amount of deviation β2 for the dimensions in the X direction and the Y direction to be equal on the object to be transferred can be calculated and reflected in the pattern drawing data. . Therefore, among the transfer patterns included in the photomask, the main pattern provided with the deviation β2 is rectangular. That is, the first main pattern has a rectangular shape with long sides on the side facing the second main pattern in a close position. As for the arrangement example in FIG. 13 described above, the long side W3 (y) of the main pattern becomes W3 (y) = W1 + β2 (y), and the short side W3 (x) becomes W3 (x) = W1 + β2 (x). W3 (x) and W3 (y) preferably satisfy the following formula. 0.8 ≦ W3 (y) ≦ 4.0 for the long side, more preferably 1.0 ≦ W3 (y) <3.5 for the long side, 0.8 ≦ W3 (x) ≦ 4.0 for the short side, and more preferably 1.0 ≦ W3 (x) ≦ 3.0 for the short side . As described above, when the photomask of this embodiment is used as a photomask for display device manufacturing, that is, when the photomask of this embodiment is used in combination with a photoresist for display device manufacturing, the photomask can be greatly increased. The loss of the thickness of the resist film on the part to be transferred corresponding to the auxiliary pattern is reduced. <Manufacturing method of photomask> Next, an example of the manufacturing method of the photomask which can be applied to the embodiment of this invention is demonstrated with reference to FIG. 14 (a)-(f). In addition, in FIGS. 14 (a) to (f), the left side is a cross-sectional view and the right side is a top view. For the sake of simplicity, the shape of the mask pattern shows only the first main pattern and the auxiliary pattern accompanying the first main pattern. First, as shown in FIG. 14 (a), a photomask base 30 is prepared. In the photomask base 30, a phase shift film 11 and a low-light transmission film 12 are sequentially formed on a transparent substrate 10 including glass and the like, and a first photoresist film 13 is further coated. The phase shift film 11 is formed on the main surface of the transparent substrate 10. When the phase shift film 11 sets any of the i-line, h-line, and g-line as the representative wavelength of the light to be exposed, the transmittance T1 (%) for the representative wavelength is preferably 20 to 80 (%). It is more preferably 30 to 75 (%), and still more preferably 40 to 75 (%). In addition, the phase shift amount of the phase shift film 11 with respect to the representative wavelength is approximately 180 degrees. With such a phase shift film 11, the phase difference of the transmitted light between the main pattern including the light transmitting portion and the auxiliary pattern including the phase shift portion can be set to approximately 180 degrees. Such a phase shift film 11 shifts the phase of light having a representative wavelength in a wavelength range of i-line to g-line by approximately 180 degrees. As a film formation method of the phase shift film 11, a well-known method, such as a sputtering method, can be applied. It is preferable that the phase shift film 11 satisfies the above-mentioned transmittance and phase difference, and is formed of a material capable of performing wet etching as described below. However, if the amount of side etching generated during wet etching becomes excessively large, deterioration of the accuracy of the CD or damage to the upper film due to undercuts may occur. Therefore, the film thickness of the phase shift film 11 is preferably set to 2000 Å or less, more preferably 300 to 2000 Å, and more preferably 300 to 1800 Å. In addition, in order to satisfy these conditions, the refractive index of the representative wavelength (for example, h-line) included in the exposed light of the material of the phase shift film 11 is preferably 1.5 to 2.9, and more preferably 1.8 to 2.4. Furthermore, in order to fully exert the phase shift effect, it is preferable that the pattern cross section (the surface to be etched) obtained by wet etching is approximately perpendicular to the main surface of the transparent substrate 10. In consideration of the above properties, as the material of the phase shift film 11, a material including any of Zr, Nb, Hf, Ta, Mo, and Ti, and Si, or an oxide, nitride, or oxynitride including these materials may be used. Materials, carbides, or carbonitrides. A low-light transmission film 12 is formed on the phase shift film 11. As the film-forming method of the low-light-transmittance film 12, a known method such as a sputtering method can be applied in the same manner as in the case of the phase shift film 11. The wavelength dependency of the phase shift amount of the phase shift film 11 is preferably within 40 degrees for the i-line, h-line, and g-line. The low-light-transmitting film 12 may include a light-shielding film that does not substantially transmit the light of exposure. In addition, the low-light-transmitting film 12 may be formed of a film having a specific low transmittance with respect to the representative wavelength of the exposed light. The low-light-transmitting film 12 used in the manufacture of the photomask of this embodiment has a transmittance T2 lower than that of the phase-shifting film 11 (%) for light having a representative wavelength in the wavelength range of i-g line. (%). In the case where the low-light-transmitting film 12 transmits the exposed light with a low transmittance, it is required that the low-light-transmitting film 12 has a transmittance and a phase shift amount of the exposed light that can reach the low-transmission of the mask of the implementation form Transmittance and phase shift of the optical part. Preferably, in a laminated state of the phase shift film 11 and the low-light transmission film 12, the transmittance T3 (%) of light having a representative wavelength of the exposed light is T3 ≦ 20, and the phase shift amount f3 is better. It is 90 (degrees) or less, and more preferably 60 (degrees) or less. As a separate property of the low-light-transmittance film 12, it is preferable that it does not substantially transmit light of the above-mentioned representative wavelength or has a transmittance (T2 (%)) of less than 30 (%) (that is, 0 <T2 <30 ), And the phase shift amount (f2) is approximately 180 degrees. The term "approximately 180 degrees" means 120 to 240 degrees. The phase shift amount f2 is preferably 150 to 210 (degrees). The material of the low-light transmission film 12 may be Cr or a compound thereof (oxide, nitride, carbide, oxynitride, or oxycarbonitride), or may be a metal containing Mo, W, Ta, and Ti. Silicide or the above compound of the silicide. However, the material of the low-light transmission film 12 is preferably a material that can be wet-etched in the same manner as the phase shift film 11 and has an etching selectivity with respect to the material of the phase shift film 11. That is, it is preferable that the low-light-transmitting film 12 has resistance to the etchant of the phase shift film 11, and the phase-shifting film 11 has resistance to the etchant of the low-light transmission film 12. A first photoresist film 13 is coated on the low-light transmission film 12. The mask of this embodiment is preferably drawn by a laser drawing device, and therefore, it is set to a photoresist suitable for the laser drawing device. The photoresist constituting the first photoresist film 13 may be a positive type or a negative type, but a positive type photoresist will be described below. Next, as shown in FIG. 14 (b), the first photoresist film 13 is drawn using a drawing device using drawing data based on a transfer pattern (first drawing). Next, the low-transmittance film 12 is wet-etched by using the first resist pattern 13p obtained by development as a mask to form a low-transmittance film pattern 12p. At this stage, a region to be a low-light-transmitting portion is defined, and a region of an auxiliary pattern (a low-light-transmitting film pattern 12p) surrounded by the low-light-transmitting portion is defined. As the etchant for wet etching (wet etchant), a known one suitable for the composition of the low-light transmission film 12 used can be used. For example, if the low transmittance film 12 is a film containing Cr, as the wet etchant, cerium ammonium nitrate or the like can be used. Next, as shown in FIG. 14 (c), the first resist pattern 13p is peeled. Thereby, a part of the low-light-transmittance film pattern 12p and the phase shift film 11 are exposed. Next, as shown in FIG. 14 (d), the second photoresist film 14 is coated on the entire surface including the low-light-transmitting film pattern 12p. Next, as shown in FIG. 14 (e), after the second drawing of the second photoresist film 14, a second resist pattern 14p is formed by development. Next, the phase shift film 11 is wet-etched using the second resist pattern 14p and the low-light-transmittance film pattern 12p as masks. By this etching (development), the main surface of the transparent substrate 10 is exposed as a light-transmitting portion, thereby delimiting a region including a main pattern of the light-transmitting portion. In addition, the second resist pattern 14p covers a region to be an auxiliary pattern, and has an opening in a region including the main pattern of the light transmitting portion. In this case, it is preferable to size the drawing data of the second drawing so that the edge portion of the low-light-transmitting film pattern 12p is exposed more inside than the opening edge of the second resist pattern 14p. In this way, it is possible to absorb the misalignment generated between the first drawing and the second drawing, and prevent degradation of the CD accuracy of the transfer pattern. That is, if the size of the second resist pattern 14p is determined at the time of the second drawing, when the isolated hole pattern is to be formed on the object to be transferred, the phase shift film 11 and the low-light-transmitting film will not be formed. A position shift occurs during the patterning of 12. Therefore, in the transfer pattern illustrated in FIG. 1, the centers of gravity of the main pattern 1 and the auxiliary pattern 2 can be precisely matched. The wet etchant for etching the phase shift film 11 is appropriately selected according to the composition of the phase shift film 11. Next, as shown in FIG. 14 (f), the second resist pattern 14p is peeled. Thereby, a photomask provided with a pattern for transfer is completed. In addition, FIG. 14 shows a case where an auxiliary pattern of a regular octagon with no defects in the segments is formed. However, in the case where any one of the eight segments is defective, it is only necessary to refer to FIG. 14 (b). When delineating the area of the auxiliary pattern, it is sufficient to change the drawing data according to the position and size of the segment to be damaged. In the manufacture of the above-mentioned photomask, there are dry etching or wet etching among the etchings that can be applied when patterning an optical film such as the phase shift film 11 or the low-light transmission film 12. Any of these can be used, but in the present invention, wet etching is particularly advantageous. The reason is that the size of the photomask for display device manufacturing is relatively large, and further, there are various sizes. When such a photomask is manufactured, if dry etching requiring a vacuum chamber is applied, the size of the dry etching device may be increased or the efficiency of the manufacturing steps may be reduced. However, there is a problem accompanying the application of wet etching when manufacturing such a photomask. Wet etching has the property of isotropic etching. Therefore, when a specific film is etched in the depth direction to be dissolved out, the etching is also performed in a direction perpendicular to the depth direction. For example, when a slit is formed by etching the phase shift film 11 with a film thickness of F (nm), the opening of the resist pattern serving as an etching mask is smaller than the required slit width by 2F (nm) (that is, one side F (nm)), but the narrower the slit becomes, the more difficult it is to maintain the dimensional accuracy of the resist pattern opening. Therefore, it is useful to set the width d of the auxiliary pattern to 1 μm or more, preferably 1.3 μm or more. In addition, when the film thickness F (nm) is large, the amount of side etching also becomes large. Therefore, it is advantageous to use a film material having a phase shift amount of approximately 180 degrees even if the film thickness is small. Therefore, it is desirable that the refractive index of the phase shift film 11 be higher for the representative wavelength of the exposed light. Specifically, it is preferable to form the phase shift film 11 using a material having a refractive index of 1.5 to 2.9, more preferably 1.8 to 2.4, for the representative wavelength. The present invention includes a method for manufacturing a display device. The method for manufacturing a display device includes the steps of using the mask of this embodiment to perform exposure through an exposure device, and transferring the above-mentioned pattern for transfer onto a target. The manufacturing method of the display device of the present invention is to first prepare a photomask of this embodiment. Next, using an exposure device having a numerical aperture (NA) of 0.08 to 0.15 and having an exposure light source including i-line, h-line, and g-line, the above-mentioned transfer pattern is exposed, and the diameter W2 is formed on the transferred body as A hole pattern of 0.8 to 3.0 (μm). It is usually advantageous to apply equal exposure during exposure. When using the mask of this embodiment to transfer a pattern for transfer, it is also possible to use reduced exposure, but as an exposure machine for a mask used for display device manufacturing, it is a method of performing equal-length projection exposure, preferably the following By. For example, the numerical aperture (NA) of the optical system is more preferably 0.08 ≦ NA <0.20, more preferably 0.08 ≦ NA ≦ 0.15, and even more preferably 0.08 <NA <0.15. The coherence factor σ is 0.4 ≦ σ ≦ 0.9, more preferably 0.4 <σ <0.7, and even more preferably 0.4 <σ <0.6. The exposure light source is a light source including at least one of i-line, h-line, and g-line among the exposed light. When a single-wavelength exposure light is used, an i-line is preferably used. On the other hand, using a light source (also referred to as a wide-wavelength light source) included in the i-line, the h-line, and the g-line is more useful in ensuring a sufficient amount of light. Moreover, oblique light illumination (ring illumination, etc.) may be used as the light source of the exposure device used, but by using ordinary illumination to which oblique light illumination is not applicable, the excellent effects of the present invention can be sufficiently obtained. According to the present invention, in a manufacturing method of a display device using a mask for manufacturing a display device, even if it is a fine dense pattern, transfer to a transfer target can be performed stably. Specifically, it is possible to precisely form a hole pattern while ensuring a process margin during manufacturing such as DOF or MEEF. Furthermore, when a dense pattern is formed, the thickness of the resist pattern formed on the body to be transferred can be sufficiently ensured. It improves the precision of CDs in display device production and provides industrial benefits such as stable production and high yield.
1‧‧‧主圖案1‧‧‧ main pattern
1a‧‧‧主圖案1a‧‧‧Main pattern
1b‧‧‧主圖案1b‧‧‧Main pattern
2‧‧‧輔助圖案2‧‧‧ auxiliary pattern
2a‧‧‧輔助圖案2a‧‧‧ auxiliary pattern
2b‧‧‧輔助圖案2b‧‧‧ auxiliary pattern
3‧‧‧低透光部3‧‧‧Low light transmission
4‧‧‧透光部4‧‧‧Transmitting Department
5‧‧‧相位偏移部5‧‧‧Phase shift section
10‧‧‧透明基板10‧‧‧ transparent substrate
11‧‧‧相位偏移膜11‧‧‧phase shift film
12‧‧‧低透光膜12‧‧‧ low light transmission film
12p‧‧‧低透光膜圖案12p‧‧‧Low light transmission film pattern
13‧‧‧第1光阻膜13‧‧‧The first photoresist film
13p‧‧‧第1抗蝕圖案13p‧‧‧The first resist pattern
14‧‧‧第2光阻膜14‧‧‧The second photoresist film
14p‧‧‧第2抗蝕圖案14p‧‧‧Second resist pattern
20‧‧‧抗蝕圖案20‧‧‧ resist pattern
21a‧‧‧孔圖案21a‧‧‧hole pattern
21b‧‧‧孔圖案21b‧‧‧hole pattern
22‧‧‧凹部22‧‧‧ Recess
30‧‧‧光罩基底30‧‧‧Mask base
711‧‧‧輪廓偏移器711‧‧‧ contour offset
712‧‧‧輪廓偏移器712‧‧‧ contour offset
713‧‧‧輪廓偏移器713‧‧‧ contour offset
714‧‧‧輪廓偏移器714‧‧‧contour offset
721‧‧‧開口圖案721‧‧‧ opening pattern
722‧‧‧開口圖案722‧‧‧ opening pattern
723‧‧‧開口圖案723‧‧‧ opening pattern
d‧‧‧輔助圖案2之寬度d‧‧‧Width of auxiliary pattern 2
L‧‧‧狹縫間距L‧‧‧ Slit pitch
P‧‧‧孔間距P‧‧‧hole spacing
S‧‧‧區域S‧‧‧ area
W1‧‧‧圖案1之寬度W1‧‧‧Width of Pattern 1
X‧‧‧方向X‧‧‧ direction
Y‧‧‧方向Y‧‧‧ direction
圖1係表示專利文獻1中記載之光罩之轉印用圖案之主要部分之圖，(a)係俯視模式圖，(b)係(a)之A-A位置之剖視模式圖。 圖2(a)～(c)係表示參考例1～3之光罩之圖案之俯視圖。 圖3係表示參考例1～3之模擬結果之圖。 圖4係表示將參考例3之主圖案相互接近配置之情形之俯視圖。 圖5(a)係例示第1主圖案與第2主圖案充分地隔開之情形之俯視圖，(b)係例示於此情形時形成於被轉印體上之抗蝕圖案之構造之剖視圖。 圖6(a)係例示第2主圖案對於第1主圖案接近之情形之俯視圖，(b)係例示於此情形時形成於被轉印體上之抗蝕圖案之構造之剖視圖。 圖7係例示本發明之實施形態之顯示裝置製造用光罩所具備之轉印用圖案之主要部分者，(a)係俯視模式圖，(b)係(a)之B-B位置之剖視模式圖。 圖8係表示將配置於主圖案之周圍之輔助圖案劃分為八區段之例之俯視圖。 圖9係例示於適用本發明之實施形態之光罩之轉印用圖案之情形時形成於被轉印體上之抗蝕圖案之構造之剖視圖。 圖10(a)～(e)係表示參考例4～8之光罩之圖案之俯視圖。 圖11(f)～(i)係表示實施例1～4之光罩之圖案之俯視圖。 圖12係表示本發明之實施形態中之參考例與實施例之模擬結果之圖。 圖13係表示包含賦予了遮罩偏差β2之主圖案之光罩之轉印用圖案之例之俯視圖。 圖14(a)～(f)係說明能夠適用於本發明之實施形態之光罩之製造方法之一例之步驟圖。 圖15係表示專利文獻2中記載之光罩之圖案之俯視圖。FIG. 1 is a view showing a main part of a transfer pattern of a photomask described in Patent Document 1, (a) is a schematic plan view, and (b) is a schematic cross-sectional view of the A-A position of (a). 2 (a) to (c) are plan views showing patterns of the photomasks of Reference Examples 1 to 3. FIG. FIG. 3 is a graph showing simulation results of Reference Examples 1 to 3. FIG. FIG. 4 is a plan view showing a case where main patterns of Reference Example 3 are arranged close to each other. FIG. 5 (a) is a plan view illustrating a case where the first main pattern and the second main pattern are sufficiently separated, and (b) is a cross-sectional view illustrating a structure of a resist pattern formed on a transfer body in this case. FIG. 6 (a) is a plan view illustrating a case where the second main pattern is close to the first main pattern, and (b) is a cross-sectional view illustrating a structure of a resist pattern formed on the body to be transferred in this case. FIG. 7 illustrates a main part of a transfer pattern included in a mask for manufacturing a display device according to an embodiment of the present invention. (A) is a schematic plan view, and (b) is a cross-sectional view of a position BB in FIG. Illustration. FIG. 8 is a plan view showing an example in which an auxiliary pattern arranged around a main pattern is divided into eight sections. FIG. 9 is a cross-sectional view illustrating a structure of a resist pattern formed on a body to be transferred when a pattern for transfer of a photomask according to an embodiment of the present invention is applied. 10 (a) to (e) are plan views showing patterns of photomasks in Reference Examples 4 to 8. FIG. 11 (f) to (i) are plan views showing patterns of the photomasks of Examples 1 to 4. FIG. FIG. 12 is a diagram showing reference examples and simulation results of the examples in the embodiment of the present invention. FIG. 13 is a plan view showing an example of a transfer pattern including a mask including a main pattern provided with a mask deviation β2. 14 (a) to (f) are step diagrams illustrating an example of a method for manufacturing a photomask that can be applied to the embodiment of the present invention. 15 is a plan view showing a pattern of a photomask described in Patent Document 2. FIG.
Claims (7)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017046175 | 2017-03-10 | ||
| JP2017-046175 | 2017-03-10 |
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| TWI721247B TWI721247B (en) | 2021-03-11 |
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| TW110104097A TWI777402B (en) | 2017-03-10 | 2018-02-12 | Photomask for use in manufacturing a display device and method of manufacturing a display device |
| TW107104933A TWI721247B (en) | 2017-03-10 | 2018-02-12 | Photomask for use in manufacturing a display device and method of manufacturing a display device |
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| JP (2) | JP6808665B2 (en) |
| KR (2) | KR102209088B1 (en) |
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| JP7383490B2 (en) * | 2020-01-07 | 2023-11-20 | 株式会社エスケーエレクトロニクス | photo mask |
| CN113260178B (en) * | 2021-06-16 | 2021-09-28 | 广东科翔电子科技股份有限公司 | Preparation method of rigid-flex combined board high-precision circuit |
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|---|---|---|---|---|
| JP3257232B2 (en) * | 1994-02-16 | 2002-02-18 | ソニー株式会社 | Phase shift mask |
| JP3577363B2 (en) * | 1994-06-29 | 2004-10-13 | 株式会社ルネサステクノロジ | Method for manufacturing semiconductor device |
| US6022644A (en) * | 1998-03-18 | 2000-02-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask containing subresolution line to minimize proximity effect of contact hole |
| US20020172796A1 (en) * | 2001-05-18 | 2002-11-21 | Ronnie Magee | Multi-patterned floor covering sample element |
| WO2004012260A1 (en) * | 2002-07-30 | 2004-02-05 | Tamura Corporation | Prcision machining stage equipment |
| JP3746497B2 (en) * | 2003-06-24 | 2006-02-15 | 松下電器産業株式会社 | Photo mask |
| JP2006338057A (en) * | 2006-09-25 | 2006-12-14 | Matsushita Electric Ind Co Ltd | Photomask |
| KR20090045493A (en) * | 2007-11-02 | 2009-05-08 | 주식회사 동부하이텍 | Mask for manufacturing semiconductor device, method for manufacturing semiconductor device using the mask, and semiconductor device manufactured by the mask and manufacturing method |
| JP6581759B2 (en) * | 2014-07-17 | 2019-09-25 | Hoya株式会社 | Photomask, photomask manufacturing method, photomask blank, and display device manufacturing method |
| JP6335735B2 (en) * | 2014-09-29 | 2018-05-30 | Hoya株式会社 | Photomask and display device manufacturing method |
| JP6022644B2 (en) * | 2015-07-14 | 2016-11-09 | 株式会社タイトー | game machine |
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| KR20210011481A (en) | 2021-02-01 |
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| CN108594594B (en) | 2023-05-02 |
| CN116500854A (en) | 2023-07-28 |
| TWI721247B (en) | 2021-03-11 |
| KR102245531B1 (en) | 2021-04-29 |
| TWI777402B (en) | 2022-09-11 |
| JP2018151618A (en) | 2018-09-27 |
| JP6808665B2 (en) | 2021-01-06 |
| CN108594594A (en) | 2018-09-28 |
| KR102209088B1 (en) | 2021-01-28 |
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