TW201840914A - 用以對半導體基體進行電化學處理之設備 - Google Patents

用以對半導體基體進行電化學處理之設備 Download PDF

Info

Publication number
TW201840914A
TW201840914A TW107102364A TW107102364A TW201840914A TW 201840914 A TW201840914 A TW 201840914A TW 107102364 A TW107102364 A TW 107102364A TW 107102364 A TW107102364 A TW 107102364A TW 201840914 A TW201840914 A TW 201840914A
Authority
TW
Taiwan
Prior art keywords
wafer
processing
processing module
electrochemical
stack
Prior art date
Application number
TW107102364A
Other languages
English (en)
Other versions
TWI739991B (zh
Inventor
約翰 麥克奈爾
馬汀 艾瑞斯
崔弗 湯瑪斯
Original Assignee
英商Ｓｐｔｓ科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 英商Ｓｐｔｓ科技公司 filed Critical 英商Ｓｐｔｓ科技公司
Publication of TW201840914A publication Critical patent/TW201840914A/zh
Application granted granted Critical
Publication of TWI739991B publication Critical patent/TWI739991B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/004—Sealing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67769—Storage means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Robotics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

根據本發明，提供一種用以處理半導體晶圓之前面之設備，該設備包含： 主腔室； 至少一裝載埠，其連接至該主腔室用以將該晶圓引入至該主腔室； 晶圓處理模組之至少一堆疊，其包含三或更多個大體上垂直堆疊的晶圓處理模組，其中該堆疊中之相鄰晶圓處理模組具有小於50 cm之垂直間隔，且各處理模組經組配來在該晶圓大體上水平地設置於其中而該前面面向上時處理該晶圓，且至少一晶圓處理模組為電化學晶圓處理模組；以及 傳送機構，其用以在該裝載埠與該等處理模組之間傳送該晶圓。

Description

用以對半導體基體進行電化學處理之設備
本發明係關於用以對半導體基體進行電化學處理之設備且係關於電化學處理之相關聯方法。本發明尤其但決非排他地係關於鍍敷設備，且係關於半導體基體上的電化學及無電沉積之相關聯方法。
電化學或無電沉積製程通常用來在半導體裝置製造中形成導電層。此等電鍍技術在達成尤其用於高縱橫比特徵之諸如矽通孔(TSV)之通孔的無孔隙填充中係有用的。例如，可在金屬鑲嵌法處理期間藉由電化學沉積形成銅互連體。類似地，Cu、Ni、SnAg及Au (以及其他金屬)已知為利用電化學或無電沉積方法沉積至半導體封裝應用中之矽或化合物半導體基體上。當將半導體及組件嵌入環氧樹脂模具中，諸如嵌入扇出型晶圓級封裝(FO-WLP)中時，此等鍍敷技術適用。嵌入式晶粒形態，諸如FO-WLP之出現讓矩形面板基體之使用得以降低製造成本。
半導體工業中之電化學沉積(ECD)製程通常包括將單獨半導體晶圓浸入電解液中。一電位施加在晶圓(充當陰極)與第二電極(充當陽極)之間，使得電解液中之物種沉積在晶圓之前面上。通常，晶圓之背面不暴露於電解液。對於反向製程，亦即電化學蝕刻，沉積層在晶圓充當陽極且第二電極充當陰極時可被移除。
在自動化ECD系統中，一機器手臂通常自裝載/卸載埠收集半導體晶圓。此裝載/卸載埠可為片匣或前開口統一晶圓盒(FOUP)。機器手臂將晶圓移動至晶圓固持夾具，該晶圓固持夾具建立與晶圓之電氣接點。一流體密封件形成於晶圓固持夾具與晶圓之前面之間，以防止任何電解液污染電氣接點或晶圓之背面。
兩個一般方法用來將晶圓浸入在電解液中——「噴水器槽」及「機架」系統。在「噴水器槽」系統中，晶圓在處理期間保持在一大體上水平的平面中。晶圓自沉積浴器上方進入電解液，並且晶圓之前面(亦即處理/沉積表面)面向下。電解液可在垂直方向上朝向晶圓之前面流動。晶圓可經旋轉以遍及晶圓表面建立一均勻擴散層厚度，此舉有助於沉積一均勻層。美國專利第8,500,968號及美國專利第6,800,187號揭示「噴水器槽」系統。
在「機架」系統中，晶圓在處理期間維持在大體上垂直的平面中且靜態地保持於電解液中。
對於「噴水器槽」或「機架」系統，電解液可藉助於泵以相對高的流率，例如以8公升/分鐘至40公升/分鐘在電解液浴器內循環。
多個處理浴器可併入單個晶圓處理系統中，使得許多處理步驟係可依序執行以使晶圓產出量最大化。處理步驟可包含多個電沉積步驟，諸如具有Ni/SnAg帽之銅柱之沉積、化學蝕刻步驟、及許多自旋-沖洗-乾燥(SRD)、潤濕及清潔步驟。
較佳的是，每一處理浴器可由使用者容易地搆及以容許處理浴器之維護及清潔。維護可包含替換電鍍槽中之陽極。用於「噴水器槽」及「機架」系統之多個處理浴器通常佈置於一或多個列中，使得每一處理浴器可由線性軌道上之機器手臂且由使用者自高處搆及用於維護。在「噴水器槽」及「機架」類型系統中所使用的晶圓運輸系統可為複雜的，經常實行晶圓固持夾具、設備前端模組(EFEM)機器人、及用以在處理浴器與清潔站之間傳送晶圓之架空機器人。將為合意的是，處理浴器之間的晶圓傳送可被簡化。
先進的晶圓處理系統通常需要大量處理浴器，可能多於20個。處理浴器之線性配置可能導致具有大型工具佔地面積、長度上可能多於6 m的晶圓處理系統。
合意的是減少晶圓製造或半導體封裝設施中之晶圓處理系統之工具佔地面積，使得大量處理步驟可在高產出量及最小工具佔地面積的情況下執行。
亦合意的是減少包括多個處理浴器的晶圓處理系統之工具佔地面積，同時維持對每一處理浴器之易搆及性用於維護及清潔目的。
除以上所描述之特定問題之外，將瞭解，通常希望且需要減少晶圓處理系統之工具佔地面積。本發明在其至少一些實施例中解決此等問題、希望及需求中至少一些。
根據本發明之第一態樣，存在一種用於處理半導體晶圓之前面之設備，該設備包含： 主腔室； 至少一裝載埠，其連接至該主腔室用以將該晶圓引入至該主腔室； 晶圓處理模組之至少一堆疊，其包含三或更多個大體上垂直堆疊的晶圓處理模組，其中該堆疊中之相鄰晶圓處理模組具有小於50 cm之垂直間隔，且各處理模組經組配來在該晶圓大體上水平地設置於其中而該晶圓之該前面面向上時處理該晶圓，且至少一晶圓處理模組為電化學晶圓處理模組；以及 傳送機構，其用以在該裝載埠與該等處理模組之間傳送該晶圓。
處理可包含化學及/或電化學處理。處理可包含以下步驟中之一或多者：蝕刻、電化學沉積、電化拋光、無電沉積、沖洗步驟、清潔步驟、及乾燥步驟。因此，該設備中所使用的該等處理模組中之一者可為蝕刻、電化學沉積、電化拋光、無電沉積、沖洗、清潔、或乾燥模組。該設備中所使用的該等處理模組中之一者可為自旋沖洗乾燥模組。
該半導體晶圓可為300 mm矽晶圓、任何其他合適半導體基體或矩形面板。該設備可適於並行處理多個半導體晶圓。該裝載埠可為片匣或前開口統一晶圓盒(FOUP)。
該電化學晶圓處理模組可包含密封件，該密封件在使用中抵靠表面密封，以界定電化學處理發生的密封空腔。該密封件可為彈性密封件。
在一些實施例中，該密封件在使用中抵靠該晶圓之表面密封，以界定電化學處理發生的該密封空腔。較佳地，該晶圓中該密封件抵靠密封之該表面為該晶圓之上表面。
該設備可進一步包含至少一晶圓載體配置，該晶圓可經裝載到該至少一晶圓載體配置上。該晶圓載體配置可包含密封件，該密封件在使用中抵靠該晶圓之表面密封。較佳地，此密封件抵靠該晶圓之上表面密封。該傳送機構可經組配來在該裝載埠與該等處理模組之間傳送一裝載晶圓載體配置。在此等實施例中，該電化學晶圓處理模組之該密封件可在使用中抵靠該晶圓載體配置之表面密封，以界定電化學處理發生的該密封空腔。
通常，該晶圓載體配置亦包含用以與一裝載晶圓進行電氣接觸之電氣接點。
該設備可進一步包含用以將該晶圓裝載至該晶圓載體配置上的晶圓載體配置裝載站。通常，一旦處理已經完成，該晶圓載體配置裝載站亦卸載該晶圓。該裝載埠可包含該晶圓載體配置裝載站。替代地，該晶圓載體配置裝載站可設置在該裝載埠與該等處理模組之間。仍替代地，該晶圓載體配置裝載站可設置在該裝載埠之前，使得當該晶圓經引入至該主腔室時，該晶圓在通過該裝載埠之前裝載到該晶圓載體配置上。
該堆疊中之相鄰處理模組較佳地具有小於25 cm之垂直間隔。該設備可包含並非一堆疊之部分的至少一處理模組。
該傳送機構可包含傳送機器人，該傳送機器人具有用以在該裝載埠與該等處理模組之間自動傳送該晶圓之至少一末端效應器。該傳送機構可在該裝載埠與該等處理模組中之任一者之間傳送該晶圓。
該等晶圓處理模組中至少一個可包含電化學沉積晶圓處理模組。該晶圓之該前面可包含一電極。該電化學處理模組可進一步包含一第二電極。一電氣偏壓可施加至該晶圓。該晶圓之該前面可包含一陰極。
該等處理模組可進一步包含一托盤，該托盤係設置在該密封件之下用以收集流體。
該處理模組可自該堆疊移除。該等處理模組可為獨立地可自該堆疊移除。該等處理模組之可移除性質可允許該等處理模組易於搆及用於維護、維修及修理工作之目的。
該等處理模組在大體上水平方向上可自該堆疊移除。該等處理模組可藉由旋轉、滑動或藉由任何其他適合手段自該堆疊移除。
該設備可進一步包含用於維持主腔室中之層狀空氣流動之鼓風機。
該設備可進一步包含晶圓對準工具。
該設備可包含至少三個堆疊。該等至少三個堆疊可佈置成列或以任何其他適合配置佈置。
該設備可經組配來並行處理二或更多個半導體晶圓之該前面。
根據本發明之第二態樣，存在使用如請求項1之設備處理半導體晶圓之方法，該方法包含以下步驟： 經由該裝載埠將該晶圓引入至該主腔室； 使用該傳送機構將該晶圓傳送至該堆疊中之第一晶圓處理模組，使得該晶圓大體上水平地設置於該第一晶圓處理模組中且該前面面向上；以及 在該第一晶圓處理模組中對該晶圓之該前面執行處理步驟。
該方法可包含以下進一步步驟：使用該傳送機構將該晶圓自該第一晶圓處理模組傳送至該堆疊中之第二晶圓處理模組，使得該晶圓大體上水平地設置於該第二晶圓處理模組中；以及在該第二晶圓處理模組中對該晶圓之該前面執行處理步驟。
該方法可包含以下進一步步驟：使用該傳送機構將該晶圓自晶圓處理模組傳送至該裝載埠，用以而後傳送出該設備。
對該晶圓之該前面執行的至少一處理步驟可選自包含以下各項之群組：化學步驟、電化學步驟、沖洗步驟、清潔步驟、自旋步驟、或乾燥步驟。該電化學處理步驟可選擇性地包含電化學沉積或電化學蝕刻。該電化學處理步驟係在該電化學晶圓處理模組中執行。該電化學晶圓處理模組可包含密封件，該密封件抵靠一表面密封以界定電化學處理發生的密封空腔。該密封件可抵靠該晶圓之表面，較佳地該晶圓之上表面密封，以界定電化學處理發生的該密封空腔。替代地，該設備可進一步包含晶圓載體配置，該晶圓可經裝載到該晶圓載體配置上，該晶圓載體配置包含密封件，該密封件抵靠該晶圓之表面，較佳地該晶圓之上表面密封，其中該傳送機構在該裝載埠與該等處理模組之間傳送該裝載晶圓載體配置。該電化學晶圓處理模組之該密封件可抵靠該晶圓載體配置之表面密封，以界定電化學處理發生的該密封空腔。
該方法可進一步包含以下步驟：將該晶圓裝載到該晶圓載體配置上。將該晶圓裝載到該晶圓載體配置上之步驟可在使用該傳送機構將該晶圓傳送至該堆疊中之第一晶圓處理模組之步驟之前或作為該步驟之部分執行。
電氣偏壓可在對該晶圓之該前面執行的至少一處理步驟期間施加至該晶圓。
二或更多個半導體晶圓可並行處理。
根據本發明之第三態樣，存在一種維修根據本發明之第一態樣之設備之方法，該方法包含以下步驟：在大體上水平方向上自該堆疊移除晶圓處理模組，用以提供對該晶圓處理模組之搆及。
維修可包含對該設備執行維護及/或修理工作。
在大體上水平方向上自該堆疊移除該晶圓處理模組之步驟可包含旋轉或滑動該處理模組。
雖然以上已描述本發明，但本發明延伸至以上或在以下描述、圖式及申請專利範圍中所闡述的特徵之任何發明性組合。例如，關於本發明之第一態樣所描述之任何特徵經視為亦關於本發明之任何其他態樣加以揭示。
在相同元件符號已使用於不同示範性實施例中的情況下，元件符號對應於為相同的特徵。
圖1展示根據本發明之第一實施例之晶圓處理系統10。晶圓處理系統10包含框架12、裝載/卸載埠14、機器人16及多個堆疊的處理模組18a-18d。本發明之其他實施例可取決於所需要的處理步驟之數目及傳送機器人16之垂直傳遞距離，而併入少於或多於四個處理模組。處理模組可各自單獨地適於濕式化學處理步驟，諸如電化學沉積、電沉積、電拋光、化學蝕刻等；以及清潔、沖洗及乾燥處理步驟。堆疊中之所有位置可適應任何模組組態且適於執行任何處理步驟。當製程需要變化時，可容易地改變硬體。
晶圓處理系統10可亦包含位於處理模組18a-18d下方的局部流體供應部20。局部流體供應部20可將諸如電解液之處理流體供應至每一處理模組18a-18d。用於模組之電子控制、監視電路及電源(未示出)可位於處理模組18a-18d上方。輔助特徵(未示出)，諸如用於晶圓處理系統10之功率分佈、大量電解液儲存器及監視裝備可位於遠離晶圓處理系統10。
框架12封閉晶圓處理系統之組件以提供晶圓處理可發生的無污染物環境。層狀氣流藉由風扇或鼓風機22產生以維持主腔室24內之無微粒環境。
裝載/卸載埠14允許諸如300 mm直徑矽晶圓之半導體晶圓28經裝載至晶圓處理系統10中且自晶圓處理系統10卸載。裝載/卸載埠14可為片匣或前開口統一晶圓盒(FOUP)。埠14亦可充當處理步驟中間的晶圓儲存位置。
機器人16包含末端效應器26，該末端效應器接觸晶圓28之背面(亦即晶圓之不經受處理的面)，且將該晶圓傳送至處理模組18a-18d中之一者。在一實施例中，晶圓28係在所有處置及處理步驟期間以晶圓之前面(亦即將要處理的面)面向上的方式處置。在本發明之一實施例中，在晶圓經傳送至處理模組18a-18d中之一者之前，亦可包括晶圓對準步驟(未示出)。晶圓傳送之機器人16之使用允許埠14與處理模組18a-18d之間的自動化晶圓傳送。
處理模組18a-18d佈置於垂直堆疊19中。與使用同等數目的處理模組之已知系統相比，垂直地堆疊的處理模組18a-18d顯著地減少晶圓處理系統10之工具佔地面積。較佳的是使用低輪廓處理模組，亦即，具有小於大略30 cm之高度的處理模組。更佳地，低輪廓模組將具有小於22 cm之高度。低輪廓處理模組之使用能有更有效的垂直堆疊。習知的噴水器槽及機架類型系統需要大的架空容積以使基體自上方進入處理模組。因此，習知噴水器槽及機架類型系統不太適合於有效的垂直堆疊。
可藉由將處理模組滑動或旋轉出垂直堆疊19來獲得對每一處理模組18a-18d之搆及，如圖2中所示。每一處理模組可為可獨立地自堆疊移除。當需要系統干預時，例如，當改變陽極或在模組內進行手動清潔時可需要此舉。經隔離的處理模組118可藉由可延伸夾具50保持連接至晶圓處理系統10，以有助於經隔離之處理模組之替換。可延伸夾具亦可附接至框架12。單獨處理模組以此方式之移除能有對隔離模組之完整及易搆及。
適於併入晶圓處理系統10中的濕式化學處理模組30展示於圖3、圖4及圖5中。適於併入晶圓處理系統10中的晶圓處理模組亦在EP2781630及EP2652178中予以描述。晶圓經由進入狹槽34自機器人臂之末端效應器26傳送至可移動平台總成32。可移動平台總成32可為可旋轉平台總成。
平台總成32經升起，使得晶圓之前表面與陽極腔室35配接。流體密封件形成於晶圓之前面與彈性密封件36之間。彈性密封件可為截頭錐形形狀以給予一可靠的流體緊密密封件。此外，此形狀之密封件將不會由於重力或與潤濕晶圓之表面之表面張力而掉出腔室。彈性密封件可附接至陽極腔室35。
需要流體緊密密封件以在處理步驟期間防止流體自處理模組滲漏。一圍阻托盤38可定位在平台32以下以盛裝可能發生的任何流體滲漏。
若需要，則至晶圓28的一電氣接點亦可經形成，使得晶圓可充當電極。電氣接點可附接至陽極腔室35。電氣接點可使用鈦電極、塗佈Pt的鈦電極或由任何其他適合導電材料製成的電極製得。電極可接觸邊緣去除區域中之晶圓表面。邊緣去除區域通常距晶圓邊緣＜2-3 mm。流體緊密密封件防止電氣接點呈暴露於處理流體或受處理流體污染。
晶圓可取決於處理步驟而為陰極或陽極。僅出於例示之目的，當在電化學沉積製程中充當陰極時，DC偏壓可施加至晶圓。此製程中之陽極可為可消耗金屬，諸如Cu、Ni或Sn；或惰性接點，諸如塗佈Pt的Ti或混合金屬氧化物(MMO)。
晶圓28及陽極腔室35界定濕式化學處理可發生的密封空腔40。濕式化學處理可包含尤其電化學或無電沉積、電化學蝕刻、及化學蝕刻中之一或多者。晶圓28與陽極腔室35之間的流體密封件係在任何流體進入空腔40之前製得。流體可能經由流體連接器42及44進入且離開空腔40。取決於將要執行的處理步驟，流體可為電解液或其他適合流體。在一實施例中，連接器42為流體入口，而連接器44為流體出口。在另一實施例中，連接器42為流體出口，而連接器44為流體入口。若需要穿過處理模組的高流體流率，則較佳的是併入一個以上的流體連接器。多個流體入口有助於精確地控制流體流率，且有助於確保氣體/空氣穴不會形成於空腔40中，上述形成可能影響處理步驟之品質。例如，電沉積步驟中之空氣穴可能影響所得沉積物之均勻性。
在處理步驟完成之後且在晶圓28與陽極腔室35之間的流體密封件破壞之前，自處理模組30移除流體。流體可經由流體連接器42及44移除。可將處理模組30傾斜以使用傾斜托架46幫助流體移除。傾斜托架46裝配於支撐板48上。支撐板48可經由一系列保持螺栓(未示出)固定至陽極腔室35。流體可經再循環用以在未來處理步驟中使用。若需要，則可在晶圓28自處理模組30之移除之前執行沖洗步驟。
處理模組可用於清潔、沖洗、潤濕或乾燥製程。對於沖洗、清潔或乾燥，可藉由使用可旋轉平台總成旋轉晶圓28。清潔流體可朝向晶圓表面之前面噴射用於清潔及/或潤濕目的。在自空腔40移除清潔流體之後，可啟動後續高速乾燥步驟。可藉由使平台總成旋轉，例如高達3000轉/分鐘(rpm)，來加速乾燥製程。可提供自旋沖洗乾燥(SRD)模組，該自旋沖洗乾燥模組具有可旋轉平台及一或多個噴霧器。
為自處理模組30移除晶圓28，使平台總成32下降，此舉破壞流體密封件。機器人臂之末端效應器26可收集晶圓28。晶圓28可經傳送至又一處理模組或傳送至裝載埠14用以暫時儲存或自晶圓處理系統10移除。
支撐板48可附接至可延伸夾具50。當處理模組經自框架12移除時，可延伸夾具50可保持連接至處理模組30。可延伸夾具可包含為處理模組30供應執行電化學處理步驟所必需的電功率之構件。
在已將處理模組30與框架12隔離之後，可對處理模組進行維護。保持螺栓及配件(未示出)可經移除以讓陽極腔室35能自模組30拆離。陽極腔室35隨後可由一新腔室替換、刷新或視情況替換。
在陽極腔室35已經移除之後提供對平台總成32之搆及。對平台總成32之搆及亦可藉由圍阻托盤38之移除達成。
晶圓處理系統10之處理模組18a-18d佈置於垂直堆疊19中。此並非用於諸如「噴水器槽」及「機架」類型系統之習知晶圓處理系統之實用配置。對於此等習知系統，電解液浴器有必要具有帶有大深度的敞開頂部以允許晶圓完全浸沒。敞開頂部式處理浴器之垂直堆疊配置將易受來自上方浴器中之處理流體之污染。此外，大垂直間距(或節距)為必需的，用以堆疊此類習知處理浴器。在沒有大垂直間距的情況下，上浴器將至少部分地阻擋晶圓自上方進入電解液中。另外，使用者出於維護及清潔目的對處理浴器之搆及，亦將至少部分地受限制。維護可包含替換電沉積槽中之陽極。
處理模組30之設計允許處理模組經垂直地堆疊在顯著更有效及緊湊的配置中，而不會限制晶圓進入每一處理模組中。每一處理模組亦可藉由自垂直堆疊19移除處理模組而易於搆及。當製程需要變化時，此亦允許硬體易於改變。
所有流體潤濕表面通常使用塑膠材料諸如聚氯乙烯(PVC)、高密度聚乙烯(HDPE)、聚偏二氟乙烯(PVDF)、聚四氟乙烯(PTFE)，或全氟烷氧基聚合物(PFA)製造。較佳材料藉由化學相容性、機械性質及成本決定。
由於簡化的處置系統及處理模組配置，可以成本有效方式建構晶圓處理系統10。
圖6展示晶圓處理系統210之第二實施例的平面圖，其中處理模組18a-18d之垂直堆疊52a-52c可佈置成列。以上關於圖3至圖5所描述之類型的處理模組30可適於在晶圓處理系統210中使用。每一處理模組可用於作為較大處理程序之部分的不同處理步驟。
晶圓處理系統210可具有一或多個裝載/卸載埠214a-214c。埠214a-214c允許諸如300 mm直徑矽晶圓之半導體晶圓經裝載至晶圓處理系統中且自晶圓處理系統卸載。裝載/卸載埠214a-214c可單獨地為片匣或FOUP。埠214a-214c可充當處理步驟中間的晶圓儲存位置。
運輸機器人216包含一或多個末端效應器226，其中每一個可獨立地接觸晶圓之背面(亦即晶圓之不經受處理的面)，且將晶圓傳送至處理模組18a-18d中之一者。運輸機器人216可沿軌道254行進，以能搆及每一垂直堆疊52a-52c中之每一處理模組18a-18d。
機器人216及垂直堆疊52a-52c容置在框架12中。框架12提供晶圓處理可發生的無污染物環境。層狀氣流藉由風扇或鼓風機產生以維持主腔室224內之無微粒環境。
晶圓對準工具256亦可併入主腔室224中以在晶圓傳送期間確保正確的晶圓對準。
圖6展示併入三個相鄰垂直堆疊52a-52c的晶圓處理系統210，然而，將設想可使用更多或更少垂直堆疊。此外，可設想其他空間配置，而非僅線性系統，以達成有效工具佔地面積。
在以上關於圖1至圖6所描述之實施例中，晶圓自身經引入處理模組中。有可能替代地將裝配於晶圓載體配置上的晶圓引入處理模組中。圖7展示此實施例，其中半導體晶圓70設置於晶圓載體夾具72上。在圖7中所示之實施例中，晶圓載體夾具72包含框架74、密封件76、及基體支撐件78，該基體支撐件處於與框架74連通中。框架74包含上表面74a且載有密封件76。晶圓70定位在基體支撐件78上。晶圓載體夾具72進一步包含電氣接點80及用於電氣接點80之引線82。當晶圓70經適當地定位時，電氣接點80與晶圓70進行電接觸，且密封件76抵靠晶圓70密封以製作流體緊密密封件。晶圓載體夾具72之組件可由任何適合材料形成。例如，框架74通常由介電質材料形成，且密封件76通常為彈性材料，諸如氟化橡膠(RTM)。
當具有晶圓70之晶圓載體夾具72經裝載至諸如電化學晶圓處理模組之處理模組中時，在模組與框架74之上表面74a之間製作流體密封件。用於此密封件之對準約束相較於對晶圓表面之流體密封件較不嚴格。技術讀者將容易瞭解，存在製作對上表面74a之可靠密封件之許多方式。
晶圓載體夾具72/晶圓70總成可在無系統之總體佈局之任何重大變化的情況下易於併入關於圖1至圖6所描述之設備中。例如，晶圓70可在離開裝載/卸載埠14之後***夾具72中。晶圓70將保持在晶圓載體夾具72中，直至進行最終處理步驟。可在用於將晶圓裝載至晶圓載體夾具上且自晶圓載體夾具卸載晶圓之裝載/卸載埠14之後提供額外站或其他機構。用於攜帶晶圓且將晶圓裝載至載體上之許多其他配置係可能的。此方法之效益在於密封件及接點在晶圓表面上僅製作一次。
10、210‧‧‧晶圓處理系統
12、74‧‧‧框架
14、214a~214c‧‧‧(裝載/卸載)埠
16‧‧‧機器人
18a~18d、118‧‧‧處理模組
19、52a~52c‧‧‧垂直堆疊
20‧‧‧局部流體供應部
22‧‧‧鼓風機
24、224‧‧‧主腔室
26、226‧‧‧末端效應器
28、70‧‧‧(半導體)晶圓
30‧‧‧濕式化學處理模組
32‧‧‧(可移動)平台總成；平台
34‧‧‧進入狹槽
35‧‧‧陽極腔室
36‧‧‧彈性密封件
38‧‧‧圍阻托盤
40‧‧‧(密封)空腔
42、44‧‧‧(流體)連接器
46‧‧‧傾斜托架
48‧‧‧支撐板
50‧‧‧可延伸夾具
72‧‧‧(晶圓載體)夾具
74a‧‧‧上表面
76‧‧‧密封件
78‧‧‧基體支撐件
80‧‧‧電氣接點
82‧‧‧引線
216‧‧‧(運輸)機器人
254‧‧‧軌道
256‧‧‧晶圓對準工具
現將僅藉由實例之方式且參考伴隨圖式來描述根據本發明之方法及設備之實施例，在圖式中：
圖1為包括堆疊處理模組之晶圓處理系統的示意圖。
圖2為在處理模組出於維護目的經移除以允許搆及的情況下的晶圓處理系統的示意圖。
圖3為處理模組的示意圖。
圖4為處理模組的分解示意圖。
圖5為處理模組的透視圖。
圖6為包含數列堆疊處理模組的晶圓處理系統的平面圖。
圖7為晶圓載體配置的側視圖。

Claims (23)

  1. 一種用於處理半導體晶圓之前面之設備，該設備包含： 一主腔室； 至少一裝載埠，其連接至該主腔室用以將該晶圓引入至該主腔室； 晶圓處理模組之至少一堆疊，其包含三或更多個大體上垂直堆疊的晶圓處理模組，其中該堆疊中之相鄰晶圓處理模組具有小於50 cm之一垂直間隔，且各晶圓處理模組經組配來在該晶圓實質上水平地設置於其中而該晶圓之該前面面向上時處理該晶圓，且至少一晶圓處理模組為一電化學晶圓處理模組；以及 一傳送機構，其用以在該裝載埠與該等處理模組之間傳送該晶圓。
  2. 如請求項1之設備，其中該電化學晶圓處理模組包含一密封件，該密封件在使用中抵靠一表面密封以界定電化學處理發生的一密封空腔。
  3. 如請求項2之設備，其中該密封件在使用中抵靠該晶圓之一表面密封，該表面較佳地為該晶圓之一上表面，以界定電化學處理發生的該密封空腔。
  4. 如請求項1或請求項2之設備，其進一步包含可供該晶圓裝載之至少一晶圓載體配置，該晶圓載體配置包含一密封件，該密封件在使用中抵靠該晶圓之一表面密封，該表面較佳地為該晶圓之一上表面，其中該傳送機構經組配來在該裝載埠與該等處理模組之間傳送一裝載晶圓載體配置。
  5. 如請求項4之設備，當從屬於請求項2時，其中該電化學晶圓處理模組之該密封件在使用中抵靠該晶圓載體配置之一表面密封，以界定電化學處理發生的該密封空腔。
  6. 如請求項4或請求項5之設備，其進一步包含用以將該晶圓裝載至該晶圓載體配置上的一晶圓載體配置裝載站。
  7. 如請求項1至6中任一項之設備，其中該堆疊中之相鄰處理模組具有小於25 cm之一垂直間隔。
  8. 如請求項1至7中任一項之設備，其中該傳送機構包含一傳送機器人，該傳送機器人具有用以在該裝載埠與該等處理模組之間自動傳送該晶圓之至少一末端效應器。
  9. 如請求項1至8中任一項之設備，其中該等晶圓處理模組中之至少一個包含一電化學沉積晶圓處理模組。
  10. 如請求項1至9中任一項之設備，其中該晶圓之該前面包含一電極。
  11. 如請求項1至10中任一項之設備，其中該等處理模組可自該堆疊移除。
  12. 如請求項11之設備，其中該等處理模組可在一實質上水平方向上自該堆疊移除。
  13. 如請求項11或12之設備，其中該等處理模組可藉由旋轉、滑動或藉由任何其他適合手段自該堆疊移除。
  14. 如請求項1至13中任一項之設備，該設備經組配來並行處理二或更多個半導體晶圓之該前面。
  15. 一種處理半導體晶圓之方法，其利用根據請求項1之設備，該方法包含以下步驟： 經由該裝載埠將該晶圓引入至該主腔室； 使用該傳送機構將該晶圓傳送至該堆疊中之一第一晶圓處理模組，使得該晶圓實質上水平地設置於該第一晶圓處理模組中且該前面面向上；以及 在該第一晶圓處理模組中對該晶圓之該前面執行一處理步驟。
  16. 如請求項15之方法，其包含以下進一步步驟： 使用該傳送機構將該晶圓自該第一晶圓處理模組傳送至該堆疊中之一第二晶圓處理模組，使得該晶圓實質上水平地設置於該第二晶圓處理模組中；以及 在該第二晶圓處理模組中對該晶圓之該前面執行一處理步驟。
  17. 如請求項15或16之方法，其包含以下進一步步驟：使用該傳送機構將該晶圓自一晶圓處理模組傳送至該裝載埠，用以而後傳送出該設備。
  18. 如請求項15至17中任一項之方法，其中對該晶圓之該前面執行的至少一處理步驟係選自包含以下各項之群組：化學步驟、電化學步驟、沖洗步驟、清潔步驟、自旋步驟、或乾燥步驟。
  19. 如請求項18之方法，其中對該晶圓之該前面執行的一處理步驟為在該電化學晶圓處理模組中執行的一電化學處理步驟，其中該電化學晶圓處理模組包含一密封件，該密封件抵靠一表面密封以界定電化學處理發生的一密封空腔。
  20. 如請求項15至19中任一項之方法，其中一電氣偏壓在對該晶圓之該前面執行的至少一處理步驟期間施加至該晶圓。
  21. 如請求項15至20中任一項之方法，其中二或更多個半導體晶圓係並行處理。
  22. 一種維修設備之方法，該設備係如請求項1所述者，該方法包含以下步驟：在一實質上水平方向上自該堆疊移除一晶圓處理模組，用以提供對該晶圓處理模組之搆及。
  23. 如請求項22之方法，其中在一實質上水平方向上自該堆疊移除該晶圓處理模組之步驟包含旋轉或滑動該處理模組。
TW107102364A 2017-01-24 2018-01-23 用以對半導體基體進行電化學處理之設備 TWI739991B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1701166.9A GB201701166D0 (en) 2017-01-24 2017-01-24 An apparatus for electrochemically processing semiconductor substrates
??1701166.9 2017-01-24
GB1701166.9 2017-01-24

Publications (2)

Publication Number Publication Date
TW201840914A true TW201840914A (zh) 2018-11-16
TWI739991B TWI739991B (zh) 2021-09-21

Family

ID=58463136

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107102364A TWI739991B (zh) 2017-01-24 2018-01-23 用以對半導體基體進行電化學處理之設備

Country Status (7)

Country Link
US (2) US11066754B2 (zh)
EP (1) EP3352206B1 (zh)
JP (1) JP7093187B2 (zh)
KR (1) KR102463961B1 (zh)
CN (1) CN108346599B (zh)
GB (1) GB201701166D0 (zh)
TW (1) TWI739991B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201905138D0 (en) 2019-04-11 2019-05-29 Spts Technologies Ltd Apparatus and method for processing a substrate

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10229111A (ja) * 1997-02-18 1998-08-25 Hitachi Ltd 半導体製造装置
US6174377B1 (en) * 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
JP3462970B2 (ja) * 1997-04-28 2003-11-05 三菱電機株式会社 メッキ処理装置およびメッキ処理方法
US6416647B1 (en) * 1998-04-21 2002-07-09 Applied Materials, Inc. Electro-chemical deposition cell for face-up processing of single semiconductor substrates
CN100382235C (zh) * 1998-11-28 2008-04-16 Acm研究公司 电镀和/或电抛光晶片的电镀和/或电抛光台以及方法
US20040104120A1 (en) * 1998-11-28 2004-06-03 Hui Wang Method and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
WO2000032835A2 (en) * 1998-11-30 2000-06-08 Applied Materials, Inc. Electro-chemical deposition system
EP1194613A4 (en) 1999-04-13 2006-08-23 Semitool Inc PROCESSOR OF PARTS HAVING IMPROVED TREATMENT FLUID FLOW PROCESSING CHAMBER
JP4090177B2 (ja) 2000-02-10 2008-05-28 大日本スクリーン製造株式会社 基板メッキ方法及びその装置
US20040079633A1 (en) * 2000-07-05 2004-04-29 Applied Materials, Inc. Apparatus for electro chemical deposition of copper metallization with the capability of in-situ thermal annealing
TWI222154B (en) * 2001-02-27 2004-10-11 Asm Nutool Inc Integrated system for processing semiconductor wafers
US6800187B1 (en) 2001-05-31 2004-10-05 Novellus Systems, Inc. Clamshell apparatus for electrochemically treating wafers
TWI274393B (en) * 2002-04-08 2007-02-21 Acm Res Inc Electropolishing and/or electroplating apparatus and methods
CN100439571C (zh) * 2002-07-18 2008-12-03 株式会社荏原制作所 电镀装置
JP2005146334A (ja) * 2003-11-13 2005-06-09 Ebara Corp めっき方法及びめっき装置
WO2005042804A2 (en) 2003-10-22 2005-05-12 Nexx Systems, Inc. Method and apparatus for fluid processing a workpiece
US20050208774A1 (en) * 2004-01-08 2005-09-22 Akira Fukunaga Wet processing method and processing apparatus of substrate
US7374391B2 (en) * 2005-12-22 2008-05-20 Applied Materials, Inc. Substrate gripper for a substrate handling robot
US20110073469A1 (en) * 2008-03-19 2011-03-31 Yue Ma Electrochemical deposition system
KR101051284B1 (ko) * 2009-06-04 2011-07-22 주식회사 에스에프에이 박막 태양전지 제조용 화학 기상 증착 장치
KR101152271B1 (ko) * 2010-05-07 2012-06-08 유정호 일체형 반도체 처리 장치
US8500968B2 (en) 2010-08-13 2013-08-06 Applied Materials, Inc. Deplating contacts in an electrochemical plating apparatus
TWI580814B (zh) * 2010-10-21 2017-05-01 荏原製作所股份有限公司 基板處理裝置，以及鍍覆裝置及鍍覆方法
GB201021326D0 (en) 2010-12-16 2011-01-26 Picofluidics Ltd Electro chemical deposition apparatus
US9017528B2 (en) 2011-04-14 2015-04-28 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9862554B2 (en) * 2011-10-26 2018-01-09 Brooks Automation, Inc. Semiconductor wafer handling and transport
US9068272B2 (en) * 2012-11-30 2015-06-30 Applied Materials, Inc. Electroplating processor with thin membrane support
GB2512056B (en) 2013-03-18 2018-04-18 Spts Technologies Ltd Electrochemical deposition chamber
US9818633B2 (en) * 2014-10-17 2017-11-14 Lam Research Corporation Equipment front end module for transferring wafers and method of transferring wafers
DE102015109393A1 (de) * 2015-06-12 2016-12-15 Elringklinger Ag Elektrochemische Vorrichtung und Verfahren zum Herstellen einer elektrochemischen Einheit für eine elektrochemische Vorrichtung

Also Published As

Publication number Publication date
KR20180087194A (ko) 2018-08-01
US11066754B2 (en) 2021-07-20
US11643744B2 (en) 2023-05-09
CN108346599B (zh) 2024-03-08
CN108346599A (zh) 2018-07-31
JP7093187B2 (ja) 2022-06-29
US20180211856A1 (en) 2018-07-26
TWI739991B (zh) 2021-09-21
GB201701166D0 (en) 2017-03-08
EP3352206B1 (en) 2023-08-23
EP3352206A1 (en) 2018-07-25
KR102463961B1 (ko) 2022-11-04
JP2018133560A (ja) 2018-08-23
US20210317592A1 (en) 2021-10-14

Similar Documents

Publication Publication Date Title
TWI624567B (zh) 真空電鍍槽
US6551488B1 (en) Segmenting of processing system into wet and dry areas
US7311810B2 (en) Two position anneal chamber
US20110073469A1 (en) Electrochemical deposition system
KR102358030B1 (ko) 전기도금 셀 내에서의 균일한 플로우 거동을 위한 방법
KR102563118B1 (ko) 혼합된 피처 전기도금을 위한 대류 최적화
US11746435B2 (en) Removing bubbles from plating cells
US9903039B2 (en) Electrochemical deposition chamber
US6662673B1 (en) Linear motion apparatus and associated method
US20180223444A1 (en) Plating apparatus and substrate holder used together with plating apparatus
KR20210021098A (ko) 분리된 애노드 챔버의 동기화된 압력 조정을 위한 방법 및 장치
US20090200161A1 (en) Fluid-confining apparatus and method of operating the same
US11643744B2 (en) Apparatus for electrochemically processing semiconductor substrates
US20050173253A1 (en) Method and apparatus for infilm defect reduction for electrochemical copper deposition
US20230167571A1 (en) Lipseal edge exclusion engineering to maintain material integrity at wafer edge
US10385471B2 (en) Electrochemical deposition chamber
CN114502778A (zh) 用于防止唇形密封件镀出的晶片屏蔽