TW201832380A - 發光二極體晶片的製造方法及發光二極體晶片 - Google Patents

發光二極體晶片的製造方法及發光二極體晶片 Download PDF

Info

Publication number: TW201832380A
Authority: TW; Taiwan
Prior art keywords: transparent substrate; wafer; light; emitting diode; transparent
Prior art date: 2017-02-06

Application number

TW107100192A

Other languages

English (en)

Chinese (zh)

Inventor

岡村卓

Original Assignee

日商迪思科股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-02-06

Filing date

2018-01-03

Publication date

2018-09-01

2018-01-03 Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司

2018-09-01 Publication of TW201832380A publication Critical patent/TW201832380A/zh

Links

239000000758 substrate Substances 0.000 title claims abstract description 93
238000004519 manufacturing process Methods 0.000 title claims abstract description 12
238000000034 method Methods 0.000 claims abstract description 12
239000013078 crystal Substances 0.000 claims abstract description 8
239000004065 semiconductor Substances 0.000 claims abstract description 8
238000002360 preparation method Methods 0.000 claims abstract description 7
235000012431 wafers Nutrition 0.000 claims description 89
239000010980 sapphire Substances 0.000 claims description 11
229910052594 sapphire Inorganic materials 0.000 claims description 11
239000005304 optical glass Substances 0.000 claims description 4
239000011347 resin Substances 0.000 claims description 4
229920005989 resin Polymers 0.000 claims description 4
239000000919 ceramic Substances 0.000 claims description 3
239000000853 adhesive Substances 0.000 claims description 2
230000001070 adhesive effect Effects 0.000 claims description 2
238000005520 cutting process Methods 0.000 abstract description 24
230000003287 optical effect Effects 0.000 description 7
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
238000001816 cooling Methods 0.000 description 3
229910002601 GaN Inorganic materials 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
230000010354 integration Effects 0.000 description 2
238000010030 laminating Methods 0.000 description 2
238000002407 reforming Methods 0.000 description 2
239000004925 Acrylic resin Substances 0.000 description 1
229920000178 Acrylic resin Polymers 0.000 description 1
239000006061 abrasive grain Substances 0.000 description 1
239000002173 cutting fluid Substances 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
239000010432 diamond Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000000463 material Substances 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
230000000149 penetrating effect Effects 0.000 description 1
238000007747 plating Methods 0.000 description 1
229920005668 polycarbonate resin Polymers 0.000 description 1
239000004431 polycarbonate resin Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Led Devices (AREA)
Dicing (AREA)
Led Device Packages (AREA)

TW107100192A 2017-02-06 2018-01-03 發光二極體晶片的製造方法及發光二極體晶片 TW201832380A (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2017019860A JP2018129347A (ja)	2017-02-06	2017-02-06	発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2017-019860		2017-02-06

Publications (1)

Publication Number	Publication Date
TW201832380A true TW201832380A (zh)	2018-09-01

Family

ID=63095382

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW107100192A TW201832380A (zh)	2017-02-06	2018-01-03	發光二極體晶片的製造方法及發光二極體晶片

Country Status (4)

Country	Link
JP (1)	JP2018129347A (ja)
KR (1)	KR20180091746A (ja)
CN (1)	CN108400112A (ja)
TW (1)	TW201832380A (ja)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4122739B2 (ja) *	2001-07-26	2008-07-23	松下電工株式会社	発光素子及びその製造方法
WO2010134331A1 (en) *	2009-05-22	2010-11-25	Panasonic Corporation	Semiconductor light-emitting device and light source device using the same
KR101726807B1 (ko) *	2010-11-01	2017-04-14	삼성전자주식회사	반도체 발광소자
JP5941306B2 (ja) *	2012-03-19	2016-06-29	スタンレー電気株式会社	発光装置およびその製造方法
JP2014175362A (ja) *	2013-03-06	2014-09-22	Toshiba Corp	半導体発光素子及びその製造方法
JP2014175354A (ja)	2013-03-06	2014-09-22	Disco Abrasive Syst Ltd	発光ダイオード
JP6401248B2 (ja) *	2013-05-15	2018-10-10	コーニンクレッカフィリップスエヌヴェＫｏｎｉｎｋｌｉｊｋｅＰｈｉｌｉｐｓＮ．Ｖ．	基板内に散乱機構を有するｌｅｄ
JP2014239123A (ja) *	2013-06-06	2014-12-18	株式会社ディスコ	加工方法

2017
- 2017-02-06 JP JP2017019860A patent/JP2018129347A/ja active Pending
2018
- 2018-01-03 TW TW107100192A patent/TW201832380A/zh unknown
- 2018-01-31 CN CN201810093638.2A patent/CN108400112A/zh active Pending
- 2018-02-05 KR KR1020180013865A patent/KR20180091746A/ko not_active Application Discontinuation

Also Published As

Publication number	Publication date
CN108400112A (zh)	2018-08-14
JP2018129347A (ja)	2018-08-16
KR20180091746A (ko)	2018-08-16

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