TW201830811A - Structure of vcsel and method for manufacturing the same - Google Patents
Structure of vcsel and method for manufacturing the same Download PDFInfo
- Publication number
- TW201830811A TW201830811A TW106104272A TW106104272A TW201830811A TW 201830811 A TW201830811 A TW 201830811A TW 106104272 A TW106104272 A TW 106104272A TW 106104272 A TW106104272 A TW 106104272A TW 201830811 A TW201830811 A TW 201830811A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- trench
- mirror
- mirror layer
- contact
- Prior art date
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
本發明係有關於一種垂直共振腔面射雷射結構及製法，尤指一種藉由三溝渠結構來降低整體電容與縮短氧化製程時間的一種垂直共振腔面射雷射結構及製法。 The invention relates to a vertical resonant cavity surface-emitting laser structure and a manufacturing method thereof, in particular to a vertical resonant cavity surface-emitting laser structure and a manufacturing method for reducing the overall capacitance and shortening the oxidation process time by the three-ditch structure.
垂直共振腔面射雷射(Vertical Cavity Surface Emitting Laser；簡稱VCSEL)是屬於發光雷射二極體的其中一種，由於其功率與價格較低，主要應用在區域網路方面，且具有「高速」與「低價」的優勢。VCSEL發光及檢光的原材料一般以砷化鎵(GaAs)、磷化銦(InP)為主，通常採有機金屬氣相沈積法(MOCVD)製成磊晶圓。與一般側射型雷射相比，VCSEL的共振腔與光子在共振腔來回共振所需之鏡面不是由製程形成之自然晶格斷裂面，而是在元件結構磊晶成長時就已形成。 Vertical Cavity Surface Emitting Laser (VCSEL) is one of the luminescent laser diodes. Due to its low power and low price, it is mainly used in regional networks and has "high speed". The advantage with "low price". The raw materials for VCSEL luminescence and photodetection are generally gallium arsenide (GaAs) and indium phosphide (InP), and the epitaxial wafer is usually prepared by organic metal vapor deposition (MOCVD). Compared with the general side-projection type laser, the mirror surface required for the resonant cavity of the VCSEL and the photon to resonate back and forth in the resonant cavity is not formed by the natural lattice fracture surface formed by the process, but is formed when the element structure is epitaxially grown.
一般VCSEL結構大致包含發光活性層、共振腔以及上下具有高反射率之布拉格反射鏡(Distributed Bragg Reflector；簡稱DBR)。當光子於發光活性層產生後便於共振腔內來回振盪，若達居量反轉(population inversion)時雷射光會於VCSEL元件的表面形成。而VCSEL由於採取面射型，雷射光呈現圓錐狀，較容易與光纖進行耦合，不需額外的光學鏡片。對於習知VCSEL的基本結構、製法與作動方式，可以參考美國專利US Pat.No.4,949,350以及US Pat.No.5,468,656的內容。 A general VCSEL structure generally includes a luminescent active layer, a resonant cavity, and a Bragg reflector (DBR) having a high reflectivity on the upper and lower sides. When the photon is generated in the luminescent active layer, it is easy to oscillate back and forth in the resonant cavity. If the population is in the population inversion, the laser light is formed on the surface of the VCSEL element. The VCSEL adopts a surface-emitting type, and the laser light has a conical shape, which is easier to couple with the optical fiber, and does not require an additional optical lens. For the basic structure, process and operation of the conventional VCSEL, reference is made to the contents of US Pat. No. 4,949,350 and US Pat. No. 5,468,656.
本發明係針對上述習知VCSEL的結構與製法加以改良，藉由獨特的三溝渠結構來降低整體電容與縮短氧化製程時間，並以光窗周圍的離子佈植區來控制模態及侷限電流，且在光窗上形成出光層來控制出光，以及，藉由階梯狀的雙層凸台結構來幫助熱傳導以降低熱效應。 The invention improves the structure and the manufacturing method of the above-mentioned conventional VCSEL, and reduces the overall capacitance and shortens the oxidation process time by the unique three-ditch structure, and controls the modal state and the limited current by the ion implantation area around the light window. And a light layer is formed on the light window to control the light, and the heat conduction is reduced by the stepped double-layered pillar structure to reduce the thermal effect.
有鑑於此，本發明的主要目的在於提供一種垂直共振腔面射雷射結構及製法，可藉由獨特的三溝渠結構來降低整體電容、縮短氧化製程時間、以及形成階梯狀的雙層凸台結構以降低熱效應。 In view of the above, the main object of the present invention is to provide a vertical cavity surface-emitting laser structure and a manufacturing method thereof, which can reduce the overall capacitance, shorten the oxidation process time, and form a stepped double-layer boss by a unique three-ditch structure. Structure to reduce thermal effects.
本發明的另一目的在於提供一種垂直共振腔面射雷射結構及製法，可藉由光窗周圍的離子佈植區來控制模態及侷限電流，且在光窗上形成一出光層來控制出光；其中出光層可為介電材質，材料成分可為二氧化矽(SiO2)、氮化矽(SiN)或是這兩種材料的混和體，反射係數介於1.5~2.0。 Another object of the present invention is to provide a vertical cavity surface-emitting laser structure and a method for controlling a mode and a current by an ion implantation area around a light window, and forming a light layer on the light window to control The light-emitting layer may be a dielectric material, and the material composition may be cerium oxide (SiO2), tantalum nitride (SiN) or a mixture of the two materials, and the reflection coefficient is between 1.5 and 2.0.
為達上述之目的，本發明提供一種垂直共振腔面射雷射結構，包括有：一基底、一第一鏡層位於該基底之上、一活化層位於該第一鏡層上、一第二鏡層位於活化層上、一氧化層夾設於該第二鏡層內、一凸台區域、一第一溝渠、一第二溝渠、一第三溝渠、一介電材料、一第一接觸層、以及一第二接觸層；其中，該凸台區域是位於該基底之上、且是由至少一部分之該第一鏡層、該活化層、該第二鏡層以及該氧化層所組構而成；於該凸台區域的一頂面的一中央處具有一光窗；該第一溝渠是位於該凸台區域之內、且環繞於該光窗的外周緣的至少一部份；該第一溝渠是由該凸台區域的該頂面由上向下至少貫穿該第二鏡層、該氧化層與該活化層；該第二溝渠是環繞於該凸台區域的外周緣的至少一部份、且與該第一溝渠相隔一間距，該第二溝渠是由上向下至少貫穿該第二鏡層與該氧化層，使該第二溝渠的一底部是位於該活化層處或該第一鏡層處兩者其中之一；該第三溝渠是環繞於該凸台區域的外周緣的至少一部份且是自該第二溝渠的該底部向下凹陷，且該第三溝渠是由上向下至少貫穿該第一鏡層，使該第三溝渠的一底部是位於該基底處；該介電材料是至少填充於該第一溝渠中；該第一接觸層是位於該凸台區域之該頂面上且接觸於該第二鏡層；該第二接觸層是至少位於該第三溝渠的該底部且至少接觸於該基底。 To achieve the above objective, the present invention provides a vertical cavity surface-emitting laser structure comprising: a substrate, a first mirror layer on the substrate, an active layer on the first mirror layer, and a second The mirror layer is disposed on the active layer, the oxide layer is disposed in the second mirror layer, a land region, a first trench, a second trench, a third trench, a dielectric material, and a first contact layer And a second contact layer; wherein the land region is above the substrate and is composed of at least a portion of the first mirror layer, the active layer, the second mirror layer, and the oxide layer Forming a light window at a center of a top surface of the land area; the first trench is at least a portion of the outer circumference of the light window and surrounding the outer periphery of the light window; a trench is formed by the top surface of the land region extending at least from the top to the second mirror layer, the oxide layer and the active layer; the second trench is at least one portion surrounding the outer periphery of the land region And spaced apart from the first trench, the second trench is at least from top to bottom The second mirror layer and the oxide layer are such that a bottom of the second trench is located at the active layer or at the first mirror layer; the third trench is surrounded by the periphery of the land region At least a portion of the edge is recessed downward from the bottom of the second trench, and the third trench extends through the first mirror layer from top to bottom such that a bottom of the third trench is located at the base The dielectric material is at least filled in the first trench; the first contact layer is on the top surface of the land region and is in contact with the second mirror layer; the second contact layer is located at least The bottom of the third trench and at least in contact with the substrate.
於一較佳實施例中，該垂直共振腔面射雷射結構更包括有一絕緣層，覆蓋於該凸台區域之一外表面的至少一部份，且該第一接觸層與 該第二接觸層至少有一部份是暴露於該絕緣層之外；該第一鏡層是一n型分佈式布拉格反射鏡層(distributed Bragg reflector；簡稱DBR)，且該第二鏡層是一p型分佈式布拉格反射鏡層；該第一鏡層與該第二鏡層之材質包含有不同鋁莫耳百分比之砷化鋁鎵(AlGaAs)，並且，該氧化層在第二鏡層中是具有相對最高莫耳百分比的鋁；該氧化層是由該第一溝渠的內周緣朝向該凸台區域之中央水平延伸；該介電材料是低介電性質的聚合物材料；以及，該第一接觸層與該第二接觸層都是金屬層。 In a preferred embodiment, the vertical cavity surface-emitting laser structure further includes an insulating layer covering at least a portion of an outer surface of the land region, and the first contact layer and the second contact At least a portion of the layer is exposed to the insulating layer; the first mirror layer is an n-type distributed Bragg reflector (DBR), and the second mirror layer is a p-type distributed a Bragg mirror layer; the material of the first mirror layer and the second mirror layer comprises aluminum gallium arsenide (AlGaAs) having a different percentage of aluminum moles, and the oxide layer has a relatively highest Mo in the second mirror layer The percentage of aluminum in the ear; the oxide layer extends horizontally from the inner periphery of the first trench toward the center of the land region; the dielectric material is a low dielectric property polymer material; and the first contact layer and the The second contact layer is a metal layer.
於一較佳實施例中，該垂直共振腔面射雷射結構更包括有一離子佈植層，位於該第二鏡層中。離子佈植層部分與氧化層重疊，並藉由氧化層及離子佈植的相對孔徑大小來控制光學模態，其中離子佈植屬於增益波導(Gain-guided)，氧化屬於折射波導(index guided)，藉由兩者的混和應用可來控制光學模態；並且，位於該凸台區域內的該離子佈植層是位於該光窗與該第一溝渠之間、且是環繞於該光窗的外周緣的至少一部份；其中，該第一接觸層是接觸於該第二鏡層的一上表面。 In a preferred embodiment, the vertical cavity surface-emitting laser structure further includes an ion implantation layer located in the second mirror layer. The ion implantation layer overlaps with the oxide layer, and the optical mode is controlled by the relative pore size of the oxide layer and the ion implantation, wherein the ion implantation belongs to a Gain-guided, and the oxidation belongs to an index guided The optical mode is controlled by a hybrid application of the two; and the ion implant layer located in the land area is located between the light window and the first trench and surrounds the light window At least a portion of the outer periphery; wherein the first contact layer is in contact with an upper surface of the second mirror layer.
於一較佳實施例中，該垂直共振腔面射雷射結構更包括有：一出光層，位於該凸台區域之該頂面的該光窗上。 In a preferred embodiment, the vertical cavity surface incident laser structure further includes: a light exiting layer on the light window of the top surface of the land area.
於一較佳實施例中，該第二接觸層是由該第三溝渠的該底部沿著該第三溝渠與該第二溝渠分別各具有之一傾斜表面向上延伸至該第二鏡層的一上表面，使該第二接觸層的一頂面大致上是位於與該第一接觸層的相同高度；於該第二溝渠的該底部形成一平面，使該第二接觸層在該第二溝渠的該底部構成一水平延伸的狀態。 In a preferred embodiment, the second contact layer extends from the bottom of the third trench along one of the third trench and the second trench to each of the second mirror layer. a top surface, wherein a top surface of the second contact layer is substantially at the same height as the first contact layer; a bottom surface of the second trench forms a plane, and the second contact layer is in the second trench The bottom portion constitutes a horizontally extended state.
為達上述之目的，本發明提供一種垂直共振腔面射雷射結構的製法，包括下列步驟：提供一雷射晶片基材，於該雷射晶片基材上藉由一半導體製程由下而上依序構成：一基底、一第一鏡層位於該基底之上、一活化層位於該第一鏡層上、以及第二鏡層位於活化層上；使用一第一光罩及實施一第一遮罩製程程序，在該第二鏡層的上表面形成具有一第一預定圖案的一第一遮罩層，該第一預定圖案是對應於該第一光罩的圖案；實施一離子佈植程序，對該第二鏡層未被該第一遮罩層覆蓋 的區域進行離子佈植以形成一離子佈植層，且該離子佈植層的一底部與該活化層仍相距有一預定高度；在尚未移除第一遮罩層的情況下，使用一第二光罩及實施一第二遮罩的製程程序，在該第二鏡層的該上表面及該第一光阻層的上方形成具有一第二預定圖案的一第二遮罩層，該第二預定圖案是對應於該第二光罩的圖案；實施一第一蝕刻程序，對該第二鏡層、該活化層及該第一鏡層未被該第二光阻層覆蓋的區域進行蝕刻，以形成一第一溝渠，且該第一溝渠是自該第二鏡層的該上表面向下貫穿該第二鏡層及該活化層，使該第一溝渠的一底部是位於該第一鏡層；實施一氧化程序，以便透過該第一溝渠而在該第二鏡層內形成水平延伸之一氧化層，且該氧化層於高度上是與該離子佈植層是接近的，甚至有部分是重疊；實施一第二蝕刻程序，以便在該第二鏡層上形成一第二溝渠，且該第二溝渠是自該第二鏡層的該上表面向下至少貫穿該第二鏡層與該氧化層，使該第二溝渠的一底部是位於該活化層處或該第一鏡層處兩者其中之一；實施一第三蝕刻程序，以便在該第二溝渠的該底部處形成向下凹陷之一第三溝渠，且該第三溝渠是由上向下至少貫穿該第一鏡層，使該第三溝渠的一底部是位於該基底處；於該第一溝渠中填充一介電材料，此介電材料是聚合物，可為Polymide，反射係數為1.5~1.6。本發明藉由挖出第一溝渠並填補聚合物，可減少高介電系數的半導體材料的面積，故可以降低電容。並且在該雷射晶片基材上的適當區域分別形成一絕緣層、一第一接觸層以及一第二接觸層；其中，該第一接觸層是位於該凸台區域之該頂面上且接觸於該第二鏡層的上表面；該第二接觸層是至少位於該第三溝渠的該底部且至少接觸於該基底，且該第二接觸層是由該第三溝渠的該底部沿著該第三溝渠與該第二溝渠分別各具有之一傾斜表面向上延伸至該第二鏡層的上表面，使該第二接觸層的一頂面大致上是位於與該第一接觸層的相同高度； 該第一接觸層與該第二接觸層至少有一部份是暴露於該絕緣層之外；其中，由該第二溝渠與該第三溝渠可在該雷射晶片基材上定義出一凸台區域，該第二溝渠與該第三溝渠兩者都是環繞於該凸台區域的外周緣的至少一部份；該凸台區域是位於該基底之上、且是由至少一部分之該第一鏡層、該活化層、該第二鏡層以及該氧化層所組構而成，於該凸台區域的一頂面的一中央處具有一光窗；該第一溝渠是位於該凸台區域之內、且環繞於該光窗的外周緣的至少一部份、且與該第二溝渠相隔一間距；該第一溝渠是由該凸台區域的頂面由上向下至少貫穿該第二鏡層、該氧化層與該活化層。 To achieve the above object, the present invention provides a method of fabricating a vertical cavity surface-emitting laser structure, comprising the steps of: providing a laser wafer substrate on which a semiconductor process is performed from bottom to top by a semiconductor process Forming sequentially: a substrate, a first mirror layer on the substrate, an active layer on the first mirror layer, and a second mirror layer on the active layer; using a first mask and implementing a first a mask process, forming a first mask layer having a first predetermined pattern on the upper surface of the second mirror layer, the first predetermined pattern being a pattern corresponding to the first mask; performing an ion implantation a process of ion-implanting a region of the second mirror layer that is not covered by the first mask layer to form an ion implant layer, and a bottom portion of the ion implant layer is still at a predetermined height from the active layer; Forming a second mask and performing a second mask process on the upper surface of the second mirror layer and the first photoresist layer without removing the first mask layer a second mask layer having a second predetermined pattern, the The second predetermined pattern is a pattern corresponding to the second reticle; performing a first etching process to perform the second mirror layer, the active layer, and the region where the first mirror layer is not covered by the second photoresist layer Etching to form a first trench, and the first trench extends downward from the upper surface of the second mirror layer to the second mirror layer and the active layer such that a bottom portion of the first trench is located at the first a mirror layer; an oxidation process is performed to form a horizontally extending oxide layer in the second mirror layer through the first trench, and the oxide layer is close in height to the ion implant layer, even a portion is overlapped; a second etching process is performed to form a second trench on the second mirror layer, and the second trench is at least penetrating the second mirror from the upper surface of the second mirror layer a layer and the oxide layer such that a bottom of the second trench is located at the active layer or at the first mirror layer; a third etching process is performed to be at the bottom of the second trench Forming a third ditches that are recessed downward, and the third ditches are upwardly At least a bottom portion of the third trench is located at the substrate; the first trench is filled with a dielectric material, the dielectric material is a polymer, which is a Polymide, and has a reflection coefficient of 1.5. ~1.6. By digging out the first trench and filling the polymer, the area of the semiconductor material having a high dielectric constant can be reduced, so that the capacitance can be reduced. And forming an insulating layer, a first contact layer and a second contact layer respectively in the appropriate regions on the laser wafer substrate; wherein the first contact layer is located on the top surface of the land region and is in contact with On the upper surface of the second mirror layer; the second contact layer is located at least at the bottom of the third trench and at least in contact with the substrate, and the second contact layer is along the bottom of the third trench Each of the third trench and the second trench respectively has an inclined surface extending upward to an upper surface of the second mirror layer such that a top surface of the second contact layer is substantially at the same height as the first contact layer At least a portion of the first contact layer and the second contact layer are exposed to the outside of the insulating layer; wherein the second trench and the third trench define a convex on the laser wafer substrate a second region, the second trench and the third trench are both at least a portion of an outer circumference surrounding the land region; the land region is above the substrate and is at least a portion of the a mirror layer, the active layer, the second mirror layer, and the The oxide layer is configured to have a light window at a center of a top surface of the land area; the first trench is located in the land area and surrounds at least an outer circumference of the light window A portion is spaced apart from the second trench; the first trench is formed by the top surface of the land region extending from the top to the bottom through the second mirror layer, the oxide layer and the active layer.
為使能更進一步瞭解本發明之特徵及技術內容，請參閱以下有關本發明之詳細說明與附圖，然而所附詳細說明與附圖僅提供參考與說明用，並非用來對本發明加以限制者。 The detailed description of the present invention and the accompanying drawings are to be understood by the claims .
10‧‧‧基底 10‧‧‧Base
21‧‧‧第一鏡層 21‧‧‧ first mirror
22‧‧‧活化層 22‧‧‧Active layer
23‧‧‧第二鏡層 23‧‧‧Second mirror
231‧‧‧氧化層 231‧‧‧Oxide layer
24‧‧‧離子佈植層 24‧‧‧Ion implant layer
240‧‧‧上表面 240‧‧‧ upper surface
25‧‧‧絕緣層 25‧‧‧Insulation
26‧‧‧介電材料 26‧‧‧Dielectric materials
27‧‧‧金屬層 27‧‧‧metal layer
270‧‧‧第一接觸層 270‧‧‧ first contact layer
271~273‧‧‧第二接觸層 271~273‧‧‧Second contact layer
2710‧‧‧頂面 2710‧‧‧ top surface
274‧‧‧出光層 274‧‧‧Lighting layer
30‧‧‧凸台區域 30‧‧‧Boss area
300‧‧‧光窗 300‧‧‧light window
31‧‧‧第一溝渠 31‧‧‧First ditches
32‧‧‧第二溝渠 32‧‧‧Second ditches
321、331‧‧‧底部 321, 331‧‧‧ bottom
33‧‧‧第三溝渠 33‧‧‧ Third Ditch
51、52‧‧‧圖案 51, 52‧‧‧ patterns
510、520‧‧‧中心圓區域 510, 520‧‧‧ center circle area
511‧‧‧環狀區域 511‧‧‧ring area
521‧‧‧外圍區域 521‧‧‧ peripheral area
5100、5110、5200、5210‧‧‧遮罩 5100, 5110, 5200, 5210‧‧‧ mask
圖一為本發明之垂直共振腔面射雷射結構一較佳實施例的剖面示意圖；圖二A為本發明之垂直共振腔面射雷射結構的製法中的第一階段示意圖；圖二B為本發明之該第一光罩的圖案的實施例示意圖；圖三A為本發明之垂直共振腔面射雷射結構的製法中的第二階段示意圖；圖三B為本發明之該第二光罩的圖案的實施例示意圖；圖四為本發明之垂直共振腔面射雷射結構的製法中的第三階段示意圖；圖五為本發明之垂直共振腔面射雷射結構的製法中的第四階段示意圖；圖六為本發明之垂直共振腔面射雷射結構的製法中的第五階段示意圖；以及 圖七為本發明之垂直共振腔面射雷射結構的製法中的第六階段示意圖。 1 is a schematic cross-sectional view of a vertical resonant cavity surface-emitting laser structure according to a preferred embodiment of the present invention; and FIG. 2A is a first stage schematic diagram of a vertical resonant cavity surface-emitting laser structure of the present invention; FIG. A schematic diagram of an embodiment of the pattern of the first photomask of the present invention; FIG. 3A is a schematic diagram of a second stage of the method for fabricating a vertical cavity surface-emitting laser structure of the present invention; FIG. Schematic diagram of an embodiment of a pattern of a reticle; FIG. 4 is a third stage diagram of a method for fabricating a vertical cavity surface-emitting laser structure of the present invention; FIG. 5 is a method for fabricating a vertical cavity surface-emitting laser structure of the present invention. The fourth stage schematic diagram; FIG. 6 is a fifth stage diagram of the method for fabricating the vertical cavity surface-emitting laser structure of the present invention; and FIG. 7 is the sixth stage of the method for fabricating the vertical cavity surface-emitting laser structure of the present invention. schematic diagram.
本發明之垂直共振腔面射雷射結構及製法，主要是藉由獨特的三溝渠結構來降低整體電容、縮短氧化製程時間、以及形成階梯狀的雙層凸台結構以降低熱效應。並且，藉由光窗周圍的離子佈植區來控制模態及侷限電流，以及在光窗上形成一傳出光層來控制出光。 The vertical cavity surface-emitting laser structure and method of the invention mainly reduces the overall capacitance, shortens the oxidation process time, and forms a stepped double-layered pillar structure to reduce the thermal effect by a unique three-ditch structure. Moreover, the modality and the localized current are controlled by the ion implantation area around the light window, and an outgoing light layer is formed on the light window to control the light output.
請參閱圖一所示，為本發明之垂直共振腔面射雷射結構一較佳實施例的剖面示意圖。 Please refer to FIG. 1 , which is a cross-sectional view of a vertical resonant cavity surface-emitting laser structure according to a preferred embodiment of the present invention.
於本實施例中，本發明之垂直共振腔面射雷射結構是架構在一以砷化鎵(Gallium Arsenide；簡稱GaAs)或磷化銦(InP)材料為主的雷射晶片基材上，且該基材由下而上依序包括有：一基底10、一第一鏡層21位於該基底10之上、一活化層22(Active Region)位於該第一鏡層21上、以及第二鏡層23位於活化層22上。於該第二鏡層23內夾設有一氧化層231(Oxide Layer)。於本實施例中，該第一鏡層21是一n型分佈式布拉格反射鏡層(distributed Bragg reflector；簡稱DBR)其也可以稱為下鏡層，且該第二鏡層23是一p型分佈式布拉格反射鏡層其也可以稱為上鏡層。該第一鏡層21與該第二鏡層23之材質包含有不同鋁莫耳百分比之砷化鋁鎵(AlGaAs)的多層結構，並且，該氧化層231在第二鏡層23中是具有相對最高莫耳百分比的鋁。藉此，在氧化程序時，該氧化層231在氧化過程中可以形成絕緣的氧化鋁(Al2O3)。 In the present embodiment, the vertical cavity surface-emitting laser structure of the present invention is constructed on a laser wafer substrate mainly composed of gallium arsenide (GaAs) or indium phosphide (InP) materials. And the substrate is sequentially included from bottom to top: a substrate 10, a first mirror layer 21 is disposed on the substrate 10, an active layer 22 (Active Region) is located on the first mirror layer 21, and a second The mirror layer 23 is located on the active layer 22. An oxide layer 231 (Oxide Layer) is interposed in the second mirror layer 23. In this embodiment, the first mirror layer 21 is an n-type distributed Bragg reflector (DBR), which may also be referred to as a lower mirror layer, and the second mirror layer 23 is a p-type. The distributed Bragg mirror layer can also be referred to as the upper mirror layer. The material of the first mirror layer 21 and the second mirror layer 23 comprises a multilayer structure of aluminum gallium arsenide (AlGaAs) having a different percentage of aluminum moles, and the oxide layer 231 has a relative orientation in the second mirror layer 23. The highest percentage of moles of aluminum. Thereby, the oxide layer 231 can form insulating alumina (Al 2 O 3 ) during the oxidation process during the oxidation process.
本發明之垂直共振腔面射雷射結構在該基材上還具有包括：一凸台區域30(Mesa)、一第一溝渠31(Isolation Trench)、一第二溝渠32、一第三溝渠33、一介電材料26(Dielectric Material)、一第一接觸層270(Contact Layer)、一第二接觸層271~273、一離子佈植層24(Implant Region)、一絕緣層25(Insolating Layer)、以及一出光層274(Power Output Layer)。 The vertical cavity surface-emitting laser structure of the present invention further comprises: a land area 30 (Mesa), a first channel 31 (Isolation Trench), a second channel 32, and a third channel 33. , a dielectric material 26 (Dielectric Material), a first contact layer 270 (Contact Layer), a second contact layer 271 ~ 273, an ion implant layer 24 (Implant Region), an insulating layer 25 (Insolating Layer) And a light output layer 274 (Power Output Layer).
該凸台區域30是位於該基底10之上、且是由至少一部分之該 第一鏡層21、該活化層22、該第二鏡層23以及該氧化層231所組構而成。於該凸台區域30的一頂面的一中央處具有一光窗300。於本實施例中，該氧化層231於高度上是與該離子佈植層24的底部是接近的，甚至有部分是重疊。 The land region 30 is formed on the substrate 10 and is composed of at least a portion of the first mirror layer 21, the active layer 22, the second mirror layer 23, and the oxide layer 231. There is a light window 300 at a center of a top surface of the land area 30. In the present embodiment, the oxide layer 231 is close to the bottom of the ion implantation layer 24 in height, and even some overlap.
該第一溝渠31是位於該凸台區域30之內、且環繞於該光窗300的外周緣的至少一部份。該第一溝渠31是由該凸台區域30的該頂面由上向下至少貫穿該第二鏡層23、該氧化層231與該活化層22，使第一溝渠31的底部是位於第一鏡層21。 The first trench 31 is at least partially located within the land region 30 and surrounding the outer periphery of the light window 300. The first trench 31 is formed by the top surface of the land region 30 extending from the top to the bottom of the second mirror layer 23, the oxide layer 231 and the active layer 22, so that the bottom of the first trench 31 is located at the first Mirror layer 21.
該第二溝渠32是環繞於該凸台區域30之上半部的外周緣的至少一部份、且與該第一溝渠31相隔一間距。該第二溝渠32是由上向下至少貫穿該第二鏡層23與該氧化層231，使該第二溝渠32的一底部321是位於該活化層22處或該第一鏡層21處兩者其中之一。該氧化層231是由該溝渠31的內周緣朝向該凸台區域30之中央水平延伸。 The second trench 32 is at least a portion of the outer circumference surrounding the upper half of the boss region 30 and spaced apart from the first trench 31 by a distance. The second trench 32 extends through the second mirror layer 23 and the oxide layer 231 from top to bottom such that a bottom portion 321 of the second trench 32 is located at the active layer 22 or at the first mirror layer 21 One of them. The oxide layer 231 extends horizontally from the inner periphery of the trench 31 toward the center of the land region 30.
該第三溝渠33是環繞於該凸台區域30之下半部的外周緣的至少一部份且是自該第二溝渠32的該底部321向下凹陷。並且，該第三溝渠33是由上向下至少貫穿該第一鏡層21(或是貫穿該活化層22及該第一鏡層21)，使該第三溝渠33的一底部331是位於該基底10上表面處。 The third trench 33 is at least a portion of the outer circumference surrounding the lower half of the land region 30 and is recessed downward from the bottom portion 321 of the second trench 32. The third trench 33 extends from the top to the bottom of the first mirror layer 21 (or through the active layer 22 and the first mirror layer 21) such that a bottom portion 331 of the third trench 33 is located therein. At the upper surface of the substrate 10.
於本實施例中，該介電材料26是低介電性質的聚合物材料為較佳，且該介電材料26是至少填充於該第一溝渠31中，可提供降低垂直共振腔面射雷射結構之整體電容的功效。於本實施例中，此介電材料26是聚合物，可為Polymide，反射係數為1.5~1.6。本發明藉由挖出第一溝渠31並填補聚合物(介電材料26)，可減少高介電系數的半導體材料的面積，故可以降低電容。該第一接觸層270與該第二接觸層271~273都是屬於金屬層27的一部份。該第一接觸層270是位於該凸台區域30之該頂面上且接觸於該第二鏡層23的一上表面240。該第二接觸層271、272、273是至少位於該第三溝渠33的該底部331且至少接觸於該基底10。於本實施例中，該第二接觸層271、272、273是由該第三溝渠33的該底部331沿著該第三溝渠33與該第二溝渠32分別各具有之一傾斜表面向上延伸至該第二鏡層23的上表面240，使該第二接觸層271、272、273的一頂面2710大致上是位於與該第一接觸層270之頂面的差不多相同高度。因此，本發明之第一接觸層270與第二接觸層271、272、273不僅是位於基底10的同一面、且更是位於大致相同的高度位 置，可以方便後續的打線製程。此外，於該第二溝渠32的該底部321形成一平面，使該第二接觸層271、272、273在該第二溝渠32的該底部321構成一水平延伸的狀態。藉此，不僅可以構成階梯狀的雙層凸台結構，使較大的下層凸台可加大散熱面積及降低熱效應，同時，兩階段凹陷的第二、第三溝渠結構32、33的傾斜面坡度變緩、且在該第二溝渠32的該底部321形成平面，可讓第二接觸層271、272、273在進行電鍍、濺鍍或蒸鍍金屬層時不易造成斷金現象。 In the present embodiment, the dielectric material 26 is preferably a low dielectric material polymer material, and the dielectric material 26 is at least filled in the first trench 31 to provide a reduced vertical cavity surface area. The effectiveness of the overall capacitance of the structure. In this embodiment, the dielectric material 26 is a polymer, which may be Polymide, and has a reflection coefficient of 1.5 to 1.6. In the present invention, by excavating the first trench 31 and filling the polymer (dielectric material 26), the area of the semiconductor material having a high dielectric constant can be reduced, so that the capacitance can be reduced. The first contact layer 270 and the second contact layer 271-273 are both part of the metal layer 27. The first contact layer 270 is an upper surface 240 on the top surface of the land region 30 and in contact with the second mirror layer 23. The second contact layer 271, 272, 273 is located at least at the bottom 331 of the third trench 33 and at least contacts the substrate 10. In this embodiment, the second contact layer 271, 272, 273 extends from the bottom portion 331 of the third trench 33 along the third trench 33 and the second trench 32 to an inclined surface. The top surface 240 of the second mirror layer 23 is such that a top surface 2710 of the second contact layer 271, 272, 273 is substantially at the same height as the top surface of the first contact layer 270. Therefore, the first contact layer 270 and the second contact layer 271, 272, 273 of the present invention are not only located on the same side of the substrate 10, but also at substantially the same height position, which facilitates the subsequent wire bonding process. In addition, a plane is formed on the bottom portion 321 of the second trench 32, so that the second contact layer 271, 272, 273 forms a horizontally extending state at the bottom portion 321 of the second trench 32. Thereby, not only a stepped double-layered boss structure can be formed, but a larger lower-layer boss can increase the heat-dissipating area and reduce the thermal effect, and at the same time, the inclined surfaces of the second and third trench structures 32, 33 of the two-stage recessed The slope is slowed and a flat surface is formed in the bottom portion 321 of the second trench 32, so that the second contact layers 271, 272, and 273 are less likely to cause gold breakage when plating, sputtering, or vapor deposition of the metal layer.
該離子佈植層24是位於該第二鏡層23中、且是位於該主動層22的上方。於本實施例中，離子佈植層24的底部有部分與氧化層231重疊，並藉由氧化層231及離子佈植24的相對孔徑大小來控制光學模態。其中，離子佈植屬於增益波導(Gain-guided)，氧化屬於折射波導(index guided)，藉由兩者的混和應用可來控制光學模態。並且，位於該凸台區域30內的該離子佈植層24是位於該光窗300與該第一溝渠31之間、且是環繞於該光窗300的外周緣的至少一部份。其中，該第一接觸層270是接觸於該離子佈植層24的一上表面。本發明藉由在光窗300周圍額外設置的離子佈植區24，可用來控制光學模態及侷限電流；於本實施例中，離子佈植製程可植入質子(Proton)或氧離子，深度介於2~4um。 The ion implant layer 24 is located in the second mirror layer 23 and above the active layer 22. In the present embodiment, the bottom portion of the ion implantation layer 24 partially overlaps the oxide layer 231, and the optical mode is controlled by the relative aperture size of the oxide layer 231 and the ion implantation 24. Among them, ion implantation belongs to Gain-guided, and oxidation belongs to index guided. The optical mode can be controlled by the mixed application of the two. Moreover, the ion implantation layer 24 located in the land region 30 is at least a portion between the light window 300 and the first trench 31 and surrounding the outer periphery of the light window 300. The first contact layer 270 is in contact with an upper surface of the ion implantation layer 24. The present invention can be used to control optical modes and localized currents by using an ion implantation area 24 additionally disposed around the light window 300. In this embodiment, the ion implantation process can implant protons or oxygen ions, depth. Between 2~4um.
該絕緣層25是覆蓋於該凸台區域30之一外表面的至少一部份，且該第一接觸層270與該第二接觸層271、272、273至少有一部份是暴露於該絕緣層25之外。該出光層274是位於該凸台區域30之該頂面的該光窗300上，可用來控制出光，其原理是利用出光層274之材料的折射率、厚度與光學波長來調整出。於本實施例中，該出光層274的材質可以是Si3N4、SiO2、Si3O4、SiN、或是SiNO等等。於本實施例中，該出光層274可為介電材質，材料成分可為二氧化矽(SiO2)、氮化矽(SiN)或是這兩種材料的混和體，反射係數介於1.5~2.0 The insulating layer 25 covers at least a portion of an outer surface of the land region 30, and at least a portion of the first contact layer 270 and the second contact layer 271, 272, 273 are exposed to the insulating layer. 25 outside. The light exit layer 274 is located on the light window 300 of the top surface of the land area 30 and can be used to control the light output. The principle is to adjust the refractive index, the thickness and the optical wavelength of the material of the light exit layer 274. In this embodiment, the material of the light-emitting layer 274 may be Si3N4, SiO2, Si3O4, SiN, or SiNO or the like. In this embodiment, the light-emitting layer 274 can be a dielectric material, and the material composition can be cerium oxide (SiO2), tantalum nitride (SiN) or a mixture of the two materials, and the reflection coefficient is between 1.5 and 2.0.
請參閱圖二A至圖七，為本發明之垂直共振腔面射雷射結構的製法的一較佳實施例的其中數個階段示意圖。 Please refer to FIG. 2A to FIG. 7 , which are schematic diagrams of several stages of a preferred embodiment of a method for fabricating a vertical cavity surface-emitting laser structure according to the present invention.
如圖二A所示，為本發明之垂直共振腔面射雷射結構的製法中的第一階段示意圖。本發明之垂直共振腔面射雷射結構的製法，首先是提供一雷射晶片基材，於該雷射晶片基材上由下而上依序構成：一基底10、 一第一鏡層21位於該基底10之上、一活化層22位於該第一鏡層21上、以及第二鏡層23位於活化層22上。接著，使用一第一光罩及實施一第一遮罩製程程序，在該第二鏡層23的一上表面240形成具有一第一預定圖案的一第一遮罩層，該第一預定圖案是對應於該第一光罩的圖案51。如圖二B所示，為本發明之該第一光罩的圖案51的實施例示意圖。於該第一光罩的圖案51中包含了一中心圓區域510以及環繞於該中心圓區域的外圍的一環狀區域511；其中，該中心圓區域510的半徑為r1，該環狀區域511之內圍的半徑為r2、且該環狀區域511之外圍的半徑為r3。該第一光罩圖案51之該中心圓區域510定義了在該第二鏡層23的上表面240會被遮罩5100覆蓋的該光窗300的位置，且該第一光罩圖案51之環狀區域511定義了在該第二鏡層23的上表面240會被遮罩5110覆蓋且不會被離子佈植的區域。該第一遮罩層即包括了該遮罩5100、5110。接著，如圖二A所示，實施一離子佈植程序，對該第二鏡層23未被該第一遮罩層(遮罩5100、5110)覆蓋的區域進行離子佈植以形成一離子佈植層24，且該離子佈植層24的一底部與該活化層22仍相距有一預定高度。於本實施例中，離子佈植有效區的底部可以有一部分與氧化層位置重疊。本發明藉由在光窗300周圍額外設置的離子佈植區24，可用來控制模態及侷限電流。 As shown in FIG. 2A, it is a schematic diagram of the first stage in the manufacturing method of the vertical cavity surface-emitting laser structure of the present invention. The method for fabricating a vertical cavity surface-emitting laser structure of the present invention firstly provides a laser wafer substrate, which is sequentially formed from bottom to top on the laser wafer substrate: a substrate 10 and a first mirror layer 21 Located on the substrate 10, an active layer 22 is on the first mirror layer 21, and a second mirror layer 23 is on the active layer 22. Then, using a first mask and performing a first mask process, a first mask layer having a first predetermined pattern is formed on an upper surface 240 of the second mirror layer 23, the first predetermined pattern It is a pattern 51 corresponding to the first reticle. As shown in FIG. 2B, it is a schematic diagram of an embodiment of the pattern 51 of the first photomask of the present invention. The pattern 51 of the first reticle includes a central circular area 510 and an annular area 511 surrounding the periphery of the central circular area; wherein the central circular area 510 has a radius r1, and the annular area 511 The radius of the inner circumference is r2, and the radius of the periphery of the annular area 511 is r3. The central circular area 510 of the first mask pattern 51 defines the position of the light window 300 that is covered by the mask 5100 on the upper surface 240 of the second mirror layer 23, and the ring of the first mask pattern 51 The region 511 defines an area where the upper surface 240 of the second mirror layer 23 is covered by the mask 5110 and is not ion implanted. The first mask layer includes the masks 5100, 5110. Next, as shown in FIG. 2A, an ion implantation process is performed to ion-implant the region of the second mirror layer 23 that is not covered by the first mask layer (mask 5100, 5110) to form an ion cloth. The implant layer 24, and a bottom of the ion implant layer 24 is still at a predetermined height from the active layer 22. In this embodiment, a portion of the bottom of the ion implantation effective region may overlap with the oxide layer. The present invention can be used to control modal and confined currents by means of an additional ion implantation zone 24 disposed around the light window 300.
如圖三A所示，為本發明之垂直共振腔面射雷射結構的製法中的第二階段示意圖。在尚未移除第一遮罩層5100、5110的情況下，使用一第二光罩及實施一第二遮罩製程程序，在該第二鏡層23的該上表面240及該第一遮罩層5100、5110的上方形成具有一第二預定圖案的一第二遮罩層，該第二預定圖案是對應於該第二光罩的圖案52。如圖三B所示，為本發明之該第二光罩的圖案52的實施例示意圖。於該第二光罩的圖案52中包含了一中心圓區域520以及環繞於該中心圓區域的外圍的一外圍區域521；其中，該中心圓區域520的半徑為R1，該外圍區域521之內圍的半徑為R2。該第二光罩圖案52之該中心圓區域520及該外圍區域521定義了在該第二鏡層23的上表面240會被遮罩5200、5210覆蓋的位置，且未被該遮罩5200、5210覆蓋的區域就是稍後會被蝕刻產生第一溝渠31的位置。該第二遮罩層即包括了該遮罩5200、5210。 As shown in FIG. 3A, it is a schematic diagram of the second stage in the manufacturing method of the vertical cavity surface-emitting laser structure of the present invention. In the case where the first mask layer 5100, 5110 has not been removed, a second mask is used and a second mask process is performed, the upper surface 240 of the second mirror layer 23 and the first mask A second mask layer having a second predetermined pattern is formed over the layers 5100, 5110, the second predetermined pattern being a pattern 52 corresponding to the second mask. As shown in FIG. 3B, it is a schematic diagram of an embodiment of the pattern 52 of the second photomask of the present invention. The pattern 52 of the second reticle includes a central circular area 520 and a peripheral area 521 surrounding the periphery of the central circular area; wherein the central circular area 520 has a radius R1 within the peripheral area 521 The radius of the circumference is R2. The central circular area 520 of the second mask pattern 52 and the peripheral area 521 define a position at which the upper surface 240 of the second mirror layer 23 is covered by the masks 5200, 5210, and is not covered by the mask 5200, The area covered by 5210 is the location where the first trench 31 will be etched later. The second mask layer includes the masks 5200, 5210.
於本實施例中，該第二光罩圖案52之該中心圓區域520的半 徑R1的值是介於該第一光罩圖案51之該環狀區域511之內圍半徑r2與外圍的半徑r3之間，亦即，r2<R1<r3；並且，該第二光罩圖案52之該外圍區域521之內圍的半徑R2的值是大於該第一光罩圖案51之該環狀區域511之外圍的半徑r3，亦即，r3<R2。因此，在進行前述第一遮罩與第二遮罩的兩道遮罩製程程序時，會具有自我對準的效果，使後續製程所得到之氧化層231孔徑與離子佈植層24孔徑對準精度增加。 In this embodiment, the value of the radius R1 of the central circular region 520 of the second mask pattern 52 is the inner radius r2 and the peripheral radius r3 of the annular region 511 of the first mask pattern 51. Between the same, that is, r2 < R1 < r3; and the radius R2 of the inner circumference of the second mask pattern 52 is larger than the annular area 511 of the first mask pattern 51. The radius r3 of the periphery, that is, r3 < R2. Therefore, when performing the two mask process procedures of the first mask and the second mask, the self-alignment effect is obtained, so that the aperture of the oxide layer 231 obtained by the subsequent process is aligned with the aperture of the ion implantation layer 24. The accuracy is increased.
接著，如圖四所示，為本發明之垂直共振腔面射雷射結構的製法中的第三階段示意圖。實施一第一蝕刻程序，對該第二鏡層23、該活化層22及該第一鏡層21未被該第二遮罩層(遮罩5200、5210)覆蓋的區域進行蝕刻，以形成一第一溝渠31，且該第一溝渠31是自該第二鏡層23的該上表面240向下貫穿該第二鏡層23及該活化層22，使該第一溝渠31的一底部是位於該第一鏡層21。 Next, as shown in FIG. 4, it is a schematic diagram of the third stage in the manufacturing method of the vertical cavity surface-emitting laser structure of the present invention. Performing a first etching process to etch the second mirror layer 23, the active layer 22, and a region of the first mirror layer 21 that is not covered by the second mask layer (mask 5200, 5210) to form a a first trench 31, and the first trench 31 extends downward from the upper surface 240 of the second mirror layer 23 through the second mirror layer 23 and the active layer 22 such that a bottom of the first trench 31 is located The first mirror layer 21.
接著，如圖五所示，為本發明之垂直共振腔面射雷射結構的製法中的第四階段示意圖。實施一氧化程序，以便透過該第一溝渠31而在該第二鏡層23內形成水平延伸之一氧化層231，且該氧化層231於高度上是與離子佈植層24是接近的，甚至可以有部分重疊，並且，該氧化層231是位在活化層22之上。相較於習知技術因不具第一溝渠31的結構所以必須透過第二溝渠32來進行氧化層之氧化程序的習知技術而言，本發明由於該氧化層231的氧化程序是透過相對來說更接近光窗300的該第一溝渠31來進行，所以，所需氧化的距離相對較短、氧化程序所需的時間也因此縮短，也減少氧化層231因氧化距離長所衍伸的應力聚集問題。 Next, as shown in FIG. 5, it is a schematic diagram of the fourth stage in the manufacturing method of the vertical cavity surface-emitting laser structure of the present invention. An oxidation process is performed to form a horizontally extending oxide layer 231 in the second mirror layer 23 through the first trench 31, and the oxide layer 231 is close to the ion implantation layer 24 in height, even There may be partial overlap, and the oxide layer 231 is located above the active layer 22. Compared with the conventional technique in which the oxidation process of the oxide layer must be performed through the second trench 32 because the structure of the first trench 31 is not provided, the oxidation process of the oxide layer 231 is relatively transparent. The first trench 31 is closer to the light window 300, so that the distance required for oxidation is relatively short, the time required for the oxidation process is also shortened, and the stress aggregation problem of the oxide layer 231 extending due to the long oxidation distance is also reduced. .
接著，如圖六所示，為本發明之垂直共振腔面射雷射結構的製法中的第五階段示意圖。實施一第二蝕刻程序，以便在該第二鏡層23上形成一第二溝渠32，且該第二溝渠32是自該第二鏡層23的該上表面240向下至少貫穿該第二鏡層23與該氧化層231，使該第二溝渠32的一底部321是位於該活化層22處或該第一鏡層21處兩者其中之一。並且，以一金屬鍍層程序在該第二鏡層23的該上表面240的一預定區域形成一接觸墊也就是稍後會成為第一接觸層270的一部份。 Next, as shown in FIG. 6, it is a fifth stage diagram of the method for manufacturing the vertical cavity surface-emitting laser structure of the present invention. A second etching process is performed to form a second trench 32 on the second mirror layer 23, and the second trench 32 extends from the upper surface 240 of the second mirror layer 23 at least through the second mirror. The layer 23 and the oxide layer 231 are such that a bottom portion 321 of the second trench 32 is located at either the active layer 22 or the first mirror layer 21. Also, a contact pad is formed in a predetermined region of the upper surface 240 of the second mirror layer 23 by a metal plating process, that is, a portion of the first contact layer 270 later.
接著，如圖七所示，為本發明之垂直共振腔面射雷射結構的製法中的第六階段示意圖。實施一第三蝕刻程序，以便在該第二溝渠32的 該底部321處形成向下凹陷之一第三溝渠33，且該第三溝渠33是由上向下至少貫穿該第一鏡層21(或是貫穿該活化層22及該第一鏡層21)，使該第三溝渠33的一底部331是位於該基底10處。 Next, as shown in FIG. 7, it is a sixth stage diagram of the method for manufacturing the vertical cavity surface-emitting laser structure of the present invention. A third etching process is performed to form a third trench 33 recessed downwardly at the bottom portion 321 of the second trench 32, and the third trench 33 extends through the first mirror layer 21 from top to bottom ( Or through the active layer 22 and the first mirror layer 21, a bottom portion 331 of the third trench 33 is located at the substrate 10.
之後，再於該第一溝渠31中填充一介電材料26，可提供降低垂直共振腔面射雷射結構之整體電容的功效；以及，在該雷射晶片基材上的適當區域分別形成一出光層274、一絕緣層25、一金屬層27(包括第一接觸層270以及第二接觸層271、272、273)。藉此，便能製作出如圖一所示之本發明之垂直共振腔面射雷射結構。 Thereafter, filling the first trench 31 with a dielectric material 26 can provide an effect of reducing the overall capacitance of the vertical cavity surface-emitting laser structure; and forming a suitable region on the laser wafer substrate The light-emitting layer 274, an insulating layer 25, and a metal layer 27 (including the first contact layer 270 and the second contact layer 271, 272, 273). Thereby, the vertical cavity surface-emitting laser structure of the present invention as shown in FIG. 1 can be produced.
於本實施例中，如圖一所示，由該第二溝渠32與該第三溝渠33可在該雷射晶片基材上定義出一凸台區域30，該第二溝渠32與該第三溝渠33兩者都是環繞於該凸台區域300的外周緣的至少一部份。該凸台區域300是位於該基底10之上、且是由至少一部分之該第一鏡層21、該活化層22、該第二鏡層23以及該氧化層231所組構而成。於該凸台區域300的一頂面的一中央處具有一光窗300。該第一溝渠31是位於該凸台區域30之內、且環繞於該光窗300的外周緣的至少一部份、且與該第二溝渠32相隔一間距。該第一溝渠31是由該凸台區域30的頂面由上向下至少貫穿該第二鏡層23、該氧化層231與該活化層22。 In this embodiment, as shown in FIG. 1 , a second land 32 and a third trench 33 may define a land area 30 on the laser wafer substrate, and the second trench 32 and the third Both of the trenches 33 are at least partially surrounding the outer periphery of the land region 300. The land region 300 is formed on the substrate 10 and is composed of at least a portion of the first mirror layer 21, the active layer 22, the second mirror layer 23, and the oxide layer 231. There is a light window 300 at a center of a top surface of the land area 300. The first trench 31 is located in the land region 30 and surrounds at least a portion of the outer periphery of the light window 300 and is spaced apart from the second trench 32 by a distance therebetween. The first trench 31 extends through the second mirror layer 23, the oxide layer 231 and the active layer 22 from the top surface of the land region 30.
於本實施例中，該出光層274是位於該凸台區域30之該頂面的該光窗300上，可用來控制出光。該離子佈植層24是位於該第二鏡層23中且是位於該氧化層231的上方但離子佈植層24底部可以和氧化層231部分重疊，並且，位於該凸台區域30內的該該離子佈植層24是位於該光窗300與該第一溝渠31之間、且是環繞於該光窗300的外周緣的至少一部份，可用來控制模態及侷限電流。 In the embodiment, the light-emitting layer 274 is located on the light window 300 of the top surface of the land area 30, and can be used to control light. The ion implant layer 24 is located in the second mirror layer 23 and above the oxide layer 231, but the bottom of the ion implant layer 24 may partially overlap the oxide layer 231, and is located in the land region 30. The ion implant layer 24 is at least a portion between the light window 300 and the first trench 31 and surrounding the outer periphery of the light window 300, and can be used to control modality and localized current.
於本實施例中，該第一接觸層270是位於該凸台區域30之該頂面上且接觸於該第二鏡層23的上表面。該第二接觸層271、272、273是至少位於該第三溝渠33的該底部331且至少接觸於該基底10，且該第二接觸層271、272、273是由該第三溝渠33的該底部331沿著該第三溝渠33與該第二溝渠32分別各具有之一傾斜表面向上延伸至該第二鏡層23的該上表面，使該第二接觸層271、272、273的一頂面大致上是位於與該第一接觸層270的差不多相同高度。因此，本發明之第一接觸層270與第二接觸層271、272、 273不僅是位於基底10的同一面、且更是位於大致相同的高度位置，可以方便後續的打線製程。該第一接觸層270與該第二接觸層271、272、273至少有一部份是暴露於該絕緣層25之外。其中，於該第二溝渠32的該底部321形成一平面，使該第二接觸層271、272、273在該第二溝渠32的該底部321構成一水平延伸的狀態。藉此，不僅可以構成階梯狀的雙層凸台結構，使較大的下層凸台可加大散熱面積及降低熱效應，同時，兩階段凹陷的第二、第三溝渠結構32、33的傾斜面坡度變緩、且在該第二溝渠32的該底部321形成平面，可讓第二接觸層271、272、273在進行電鍍、濺鍍或蒸鍍金屬層時不易造成斷金現象。 In the embodiment, the first contact layer 270 is located on the top surface of the land region 30 and is in contact with the upper surface of the second mirror layer 23. The second contact layer 271, 272, 273 is located at least at the bottom 331 of the third trench 33 and at least in contact with the substrate 10, and the second contact layer 271, 272, 273 is the third trench 33 The bottom portion 331 has an inclined surface extending upwardly from the third trench 33 and the second trench 32 to the upper surface of the second mirror layer 23 to make a top of the second contact layer 271, 272, 273 The face is substantially at the same height as the first contact layer 270. Therefore, the first contact layer 270 and the second contact layer 271, 272, 273 of the present invention are not only located on the same surface of the substrate 10, but also at substantially the same height position, which facilitates the subsequent wire bonding process. At least a portion of the first contact layer 270 and the second contact layer 271, 272, 273 are exposed outside the insulating layer 25. The bottom portion 321 of the second trench 32 forms a plane such that the second contact layer 271, 272, 273 forms a horizontally extending state at the bottom portion 321 of the second trench 32. Thereby, not only a stepped double-layered boss structure can be formed, but a larger lower-layer boss can increase the heat-dissipating area and reduce the thermal effect, and at the same time, the inclined surfaces of the second and third trench structures 32, 33 of the two-stage recessed The slope is slowed and a flat surface is formed in the bottom portion 321 of the second trench 32, so that the second contact layers 271, 272, and 273 are less likely to cause gold breakage when plating, sputtering, or vapor deposition of the metal layer.
以上所述僅為本發明之較佳可行實施例，非因此侷限本發明之專利範圍，故舉凡運用本發明說明書及圖示內容所為之等效技術變化，均包含於本發明之範圍內。 The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and the equivalents of the present invention are intended to be included within the scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106104272A TWI710187B (en) | 2017-02-09 | 2017-02-09 | Structure of vcsel and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106104272A TWI710187B (en) | 2017-02-09 | 2017-02-09 | Structure of vcsel and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201830811A true TW201830811A (en) | 2018-08-16 |
| TWI710187B TWI710187B (en) | 2020-11-11 |
Family
ID=63960628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106104272A TWI710187B (en) | 2017-02-09 | 2017-02-09 | Structure of vcsel and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI710187B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109980501A (en) * | 2019-05-05 | 2019-07-05 | 厦门乾照半导体科技有限公司 | A kind of laser structure and production method of vertical plane radial |
| US10516250B1 (en) | 2018-10-24 | 2019-12-24 | Epileds Technologies, Inc. | Near-infrared vertical-cavity surface-emitting laser and transfer method thereof |
| CN112117638A (en) * | 2019-06-21 | 2020-12-22 | 光环科技股份有限公司 | Vertical resonant cavity surface emitting laser structure |
| TWI781739B (en) * | 2021-03-25 | 2022-10-21 | 穩懋半導體股份有限公司 | Vertical-cavity surface-emitting laser and method for forming the same |
| TWI791116B (en) * | 2019-06-18 | 2023-02-01 | 光環科技股份有限公司 | Structure of vertical cavity surface-emitting laser |
| TWI800464B (en) * | 2021-11-16 | 2023-04-21 | 大陸商深圳市德明利光電有限公司 | Fabrication Method of AlOAlxGa-xAs DBR VCSEL with High Refractive Index Contrast |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60215303D1 (en) * | 2002-04-25 | 2006-11-23 | Avalon Photonics Ag | High speed vertical cavity resonator surface emitting laser (VCSEL) with low parasitic capacitance |
| JP5376104B2 (en) * | 2005-07-04 | 2013-12-25 | ソニー株式会社 | Surface emitting semiconductor laser |
| JP2011151293A (en) * | 2010-01-25 | 2011-08-04 | Fuji Xerox Co Ltd | Surface emission semiconductor laser, surface emission semiconductor laser device, optical transmission device, and information processor |
| TW201409881A (en) * | 2012-08-16 | 2014-03-01 | jin-wei Xu | Vertical-cavity surface-emitting laser with controllable optical mode |
| JP2015008271A (en) * | 2013-05-31 | 2015-01-15 | 株式会社リコー | Surface emitting laser element and atomic oscillator |
-
2017
- 2017-02-09 TW TW106104272A patent/TWI710187B/en active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10516250B1 (en) | 2018-10-24 | 2019-12-24 | Epileds Technologies, Inc. | Near-infrared vertical-cavity surface-emitting laser and transfer method thereof |
| TWI690128B (en) * | 2018-10-24 | 2020-04-01 | 光鋐科技股份有限公司 | Near infrared vertical cavity surface emitting laser and transfer method thereof |
| CN109980501A (en) * | 2019-05-05 | 2019-07-05 | 厦门乾照半导体科技有限公司 | A kind of laser structure and production method of vertical plane radial |
| CN109980501B (en) * | 2019-05-05 | 2024-05-10 | 厦门乾照半导体科技有限公司 | Vertical plane-emitting laser structure and manufacturing method thereof |
| TWI791116B (en) * | 2019-06-18 | 2023-02-01 | 光環科技股份有限公司 | Structure of vertical cavity surface-emitting laser |
| CN112117638A (en) * | 2019-06-21 | 2020-12-22 | 光环科技股份有限公司 | Vertical resonant cavity surface emitting laser structure |
| CN112117638B (en) * | 2019-06-21 | 2023-05-16 | 光环科技股份有限公司 | Vertical resonant cavity surface emitting laser structure |
| TWI781739B (en) * | 2021-03-25 | 2022-10-21 | 穩懋半導體股份有限公司 | Vertical-cavity surface-emitting laser and method for forming the same |
| TWI800464B (en) * | 2021-11-16 | 2023-04-21 | 大陸商深圳市德明利光電有限公司 | Fabrication Method of AlOAlxGa-xAs DBR VCSEL with High Refractive Index Contrast |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI710187B (en) | 2020-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI710187B (en) | Structure of vcsel and method for manufacturing the same | |
| US10122152B1 (en) | Structure of VCSEL and method for manufacturing the same | |
| TWI791116B (en) | Structure of vertical cavity surface-emitting laser | |
| US8530358B2 (en) | Vertical cavity surface emitting laser and manufacturing method thereof | |
| US11374384B2 (en) | Light-emitting device and method of manufacturing light-emitting device | |
| JPH06268330A (en) | Vcsel with horizontal index guide | |
| US7529284B2 (en) | Semiconductor optical pumping device for radiation emission and the production method thereof | |
| US11158778B2 (en) | LED package including converter confinement | |
| US20190334318A1 (en) | Surface-emitting laser and electronic apparatus | |
| US20210175688A1 (en) | Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device | |
| US8861562B2 (en) | Vertical light emitting device and manufacturing method | |
| CN101867154B (en) | Semiconductor device | |
| KR20190088803A (en) | Semiconductor laser device and method of manufacturing the same | |
| WO2017212888A1 (en) | Semiconductor device and production method therefor | |
| CN112913094A (en) | Vertical resonator type light emitting element | |
| CN113708214B (en) | Dual-wavelength VCSEL structure based on selective epitaxial technology and preparation method thereof | |
| KR102046237B1 (en) | Wide-area laser including anti-guiding regions for higher lateral mode suppression | |
| US20220368107A1 (en) | Vertical cavity surface emitting device | |
| US20090305447A1 (en) | Implanted vertical cavity surface emitting laser | |
| CN108736315A (en) | Vertical cavity surface emitting laser structure and preparation method | |
| TWI459670B (en) | Vertical cavity surface emitting laser and manufacturing method thereof | |
| CN112117638B (en) | Vertical resonant cavity surface emitting laser structure | |
| JP2006324582A (en) | Plane emissive semiconductor laser and manufacturing method thereof | |
| US9105807B2 (en) | Semiconductor optical emitting device with grooved substrate providing multiple angled light emission paths | |
| US20210273413A1 (en) | Surface emitting laser device, light-emitting device including the same and manufacturing method thereof |