TW201826436A - Substrate treatment device, substrate treatment method and recording medium - Google Patents

Substrate treatment device, substrate treatment method and recording medium Download PDF

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TW201826436A
TW201826436A TW106140634A TW106140634A TW201826436A TW 201826436 A TW201826436 A TW 201826436A TW 106140634 A TW106140634 A TW 106140634A TW 106140634 A TW106140634 A TW 106140634A TW 201826436 A TW201826436 A TW 201826436A
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substrate
wafer
sliding member
back surface
pressing
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TW106140634A
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TWI759364B (en
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瀧口靖史
山本太郎
岡本芳樹
保坂隼斗
小玉輝彥
久保明廣
小篠龍人
有內雄司
木村慎佑
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日商東京威力科創股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Regarding a treatment conducted by making a slider slide on the back side of a substrate, this invention aims to conduct the treatment with a high in-plane uniformity and to reliably apply on the substrate a function achieved by the sliding of the slider. A substrate treatment device according to this invention comprises sliders 63, 64 rotating around a vertical axis for sliding on the back side of the substrate W to conduct the treatment, and a revolution mechanism 66 that makes the rotating sliders 63, 64 to revolve around a vertical revolution axis with a revolution radius smaller than the diameter of the slider 64. When the substrate W is horizontally held by a first holder 35 at a region on the back side of the substrate W not overlapping with the central portion of the substrate W, the sliders 63, 64 slide at the central portion on the back side of the substrate W. When the substrate W is held by a second holder 12 so as to be horizontally held at the central portion on the back side of the substrate W to make the substrate W to rotate around a vertical axis, the sliders 63, 64 slide at the peripheral portion on the back side of the substrate W.

Description

基板處理裝置、基板處理方法及記錄媒體Substrate processing device, substrate processing method, and recording medium

本發明係關於一種滑動構件在基板的背面滑動而進行處理之技術。The present invention relates to a technology in which a sliding member is slid on the back surface of a substrate and processed.

半導體裝置具有多層配線構造。為了形成此多層配線構造，在半導體裝置的製造過程中，對基板即半導體晶圓（下稱晶圓）進行複數次光微影步驟，該光微影步驟形成用於形成配線之遮罩圖案即光阻圖案。各光微影步驟，以對晶圓的相同區域進行照射之方式施以曝光處理。由於上述半導體裝置之配線圖案的細微化發展，須將在之前的光微影步驟進行照射之區域、及在之後的光微影步驟進行照射之區域的對準精度，亦即疊合（重合）精度提高。The semiconductor device has a multilayer wiring structure. In order to form this multilayer wiring structure, during the manufacturing process of a semiconductor device, a plurality of photolithography steps are performed on a semiconductor wafer (hereinafter referred to as a wafer). This photolithography step forms a mask pattern for forming a wiring, ie Photoresist pattern. In each photolithography step, an exposure process is performed to irradiate the same area of the wafer. Due to the miniaturization of the wiring pattern of the above semiconductor device, the alignment accuracy of the area irradiated in the previous photolithography step and the area irradiated in the subsequent photolithography step must be superimposed (superimposed). Increased accuracy.

而晶圓在曝光處理時，載置於設置在曝光機的平台而進行曝光照射。在此平台上，使晶圓朝向該平台的表面而加以吸引，固定其位置。然則，搬運至曝光機之晶圓有產生歪曲而並不平坦的情況。若將此等晶圓載置於平台，則有維持歪曲狀態地吸附在該平台而進行曝光照射的情況。此一情況，成為對從原本的進行照射之區域偏移的區域進行照射。因此，對於上述之疊合精度的提高具有極限。During the exposure process, the wafer is placed on a stage set on an exposure machine to perform exposure irradiation. On this platform, the wafer is attracted toward the surface of the platform, and its position is fixed. However, the wafer transferred to the exposure machine may be distorted and not flat. When these wafers are placed on a stage, the wafer may be adsorbed on the stage while maintaining a distorted state, and exposed and irradiated. In this case, irradiation is performed on an area that is shifted from the original irradiation area. Therefore, there is a limit to the improvement of the superposition accuracy described above.

於專利文獻1，記載為了解決晶圓的歪曲所造成之載置狀態的缺陷而進行研磨晶圓的背面之粗化處理，改善對於曝光機的平台之晶圓背面的平滑性。作為進行此一粗化處理之研磨裝置，在處理晶圓的背面之中央部時藉由保持部保持晶圓之邊緣部並使自轉的研磨構件水平移動。而後，在處理晶圓的背面之邊緣部時藉由旋轉吸盤保持晶圓之中心部並使晶圓旋轉，且使自轉的研磨構件在橫向移動。此外，於專利文獻2記載一種研磨裝置，使研磨構件自轉，且以具有較晶圓的半徑大小程度更長之公轉半徑的方式公轉。此研磨裝置中，在處理晶圓的背面之中央部時進行研磨構件的自轉及公轉，並藉由保持部保持晶圓之邊緣部，使晶圓水平移動。此外，在處理晶圓的背面之邊緣部時進行研磨構件的自轉及公轉，並藉由保持晶圓之中心部的旋轉吸盤使晶圓旋轉。 [習知技術文獻] [專利文獻]In Patent Document 1, it is described that the back surface of a polished wafer is roughened in order to solve the defect of the mounting state caused by the distortion of the wafer, and the smoothness of the back surface of the wafer to the stage of the exposure machine is improved. As a polishing apparatus that performs this roughening process, when processing the central portion of the back surface of the wafer, the edge portion of the wafer is held by the holding portion and the rotating polishing member is moved horizontally. Then, when processing the edge portion of the back surface of the wafer, the center portion of the wafer is held by the rotating chuck and the wafer is rotated, and the self-rotating polishing member is moved laterally. Further, Patent Document 2 describes a polishing device that rotates a polishing member and revolves so as to have a revolving radius that is longer than the radius of a wafer. In this polishing apparatus, when the central portion of the back surface of the wafer is processed, the polishing member is rotated and revolved, and the edge portion of the wafer is held by the holding portion to move the wafer horizontally. In addition, when processing the edge portion of the back surface of the wafer, the polishing member is rotated and revolved, and the wafer is rotated by a rotating chuck that holds the center portion of the wafer. [Habitual technical literature] [patent literature]

專利文獻1：日本特開2015－181145號公報 專利文獻2：日本特許第5904169號Patent Document 1: Japanese Patent Application Laid-Open No. 2015-181145 Patent Document 2: Japanese Patent No. 5904169

[本發明所欲解決的問題] 為了將晶圓平坦地載置於曝光機之平台，宜以在晶圓的背面於面內之各部同樣地形成微小突起的方式進行研磨，使晶圓的各部對於該平台之平滑性提高。關於專利文獻1、2的裝置，研磨構件的相對於晶圓之移動圖案，在研磨構件位於晶圓之中央部時，與位於晶圓之邊緣部時不同，故溝的形狀在面內之各部不同。此外，關於晶圓之中央部，在專利文獻1的裝置僅藉由研磨構件的自轉而研磨，在專利文獻2的裝置因研磨構件的公轉半徑較大，故難以形成足夠微小之突起。因此，需要一種能夠以在晶圓的背面中形成均一性更高、更微小之突起的方式進行研磨之裝置。[Problems to be Solved by the Invention] In order to place the wafer flat on the platform of the exposure machine, it is preferable to perform polishing in such a manner that minute protrusions are similarly formed on the back and in-plane portions of the wafer, so that each portion of the wafer is polished. The smoothness of the platform is improved. Regarding the devices of Patent Documents 1 and 2, the movement pattern of the polishing member with respect to the wafer is different when the polishing member is located at the center portion of the wafer than when it is located at the edge portion of the wafer. different. In addition, regarding the central portion of the wafer, the device of Patent Document 1 is polished only by the rotation of the polishing member, and the device of Patent Document 2 has a large revolution radius of the polishing member, so it is difficult to form sufficiently small protrusions. Therefore, there is a need for a device capable of polishing in a manner that more uniform and finer protrusions are formed on the back surface of a wafer.

依據上述問題，本發明之目的在於提供一種技術，對於滑動構件在基板的背面滑動而進行之處理，可在面內高均一性地進行處理，並可對基板確實地施予滑動構件之滑動所產生的作用。 [解決問題之技術手段]Based on the above-mentioned problems, an object of the present invention is to provide a technology capable of processing a sliding member sliding on the back surface of a substrate with high uniformity within the surface and reliably applying the sliding member to the substrate. The effect. [Technical means to solve the problem]

本發明之基板處理裝置，具備： 第1保持部，水平地保持基板的背面之不與中央部重疊的區域； 第2保持部，水平地保持該基板的背面之中央部，使其繞鉛直軸旋轉； 滑動構件，為了在該基板的背面滑動而進行處理，繞著鉛直軸自轉； 公轉機構，使自轉中之該滑動構件，以具有較該滑動構件的直徑更小之公轉半徑的方式繞鉛直之公轉軸公轉；以及 相對移動機構，用於以下述方式，使該基板與該滑動構件之公轉軌道的相對位置在水平方向移動：在將該基板保持於該第1保持部時使該滑動構件在該基板的背面之中央部滑動，在將該基板保持於該第2保持部時使該滑動構件在旋轉之該基板的背面之邊緣部滑動。The substrate processing apparatus of the present invention includes: a first holding portion that horizontally holds a region of the back surface of the substrate that does not overlap with the central portion; a second holding portion that horizontally holds the central portion of the back surface of the substrate so as to surround a vertical axis Rotate; The sliding member is processed to slide on the back of the substrate, and rotates around the vertical axis; The revolving mechanism rotates the sliding member around the vertical with a smaller revolution radius than the diameter of the sliding member. And a relative movement mechanism for moving the relative position of the substrate and the orbit of the sliding member in the horizontal direction in the following manner: when the substrate is held in the first holding portion, the sliding member is moved The central portion of the rear surface of the substrate slides, and when the substrate is held on the second holding portion, the sliding member slides on an edge portion of the rear surface of the substrate that rotates.

本發明之基板處理方法，具備如下步驟： 藉由第1保持部，水平地保持基板的背面之不與中央部重疊的區域之步驟； 藉由第2保持部，水平地保持該基板的背面之中央部，使其繞鉛直軸旋轉的步驟； 使得用於在該基板的背面滑動而進行處理之滑動構件繞鉛直軸自轉的步驟； 藉由公轉機構，使自轉中之該滑動構件，以具有較該滑動構件的直徑更小之公轉半徑的方式繞鉛直之公轉軸公轉的步驟； 藉由相對移動機構使該基板與該滑動構件之公轉軌道的相對位置在水平方向移動之步驟； 在將該基板保持於該第1保持部時，使自轉之該滑動構件以在該基板的背面之中央部滑動的方式公轉之步驟；以及 在將該基板保持於該第2保持部時，使該滑動構件以在該基板的背面之邊緣部滑動的方式公轉之步驟。The substrate processing method of the present invention includes the following steps: a step of horizontally holding an area of the back surface of the substrate that does not overlap with the central portion by the first holding portion; and horizontally holding the rear surface of the substrate by the second holding portion. A step of rotating the central part around a vertical axis; a step of rotating a sliding member for processing on the back surface of the substrate to rotate around the vertical axis; and using a revolution mechanism to rotate the sliding member during rotation so as to have a relatively A step of orbiting a vertical revolution axis in a manner of a smaller revolution radius of the sliding member; a step of moving the relative position of the substrate and the orbit of the sliding member in a horizontal direction by a relative movement mechanism; A step of orbiting the sliding member that rotates so as to slide on a central portion of the back surface of the substrate when holding the first holding portion; and a step of causing the sliding member to rotate while holding the substrate on the second holding portion The step of orbiting by sliding on the edge portion of the back surface of the substrate.

本發明之記錄媒體，儲存有使用在使滑動構件在基板的背面滑動而進行處理之基板處理裝置的程式，該程式係為了實行本發明之基板處理方法的各步驟的程式。 [本發明之效果]The recording medium of the present invention stores a program for a substrate processing apparatus that performs processing by sliding a sliding member on the back surface of the substrate, and the program is a program for implementing each step of the substrate processing method of the present invention. [Effect of the present invention]

依本發明，設置公轉機構，其使繞鉛直軸自轉之滑動構件，以具有較該滑動構件的直徑更小之公轉半徑的方式繞鉛直之公轉軸公轉；在保持基板的背面之中央部的外側時，藉由滑動構件滑動而處理該基板的背面之中央部，在保持基板的背面之中央部時，藉由滑動構件滑動而處理旋轉之基板的背面之邊緣部。藉此，可對基板的背面之中央部及邊緣部高均一性地進行處理。此外，滑動構件重複在基板之面內的各部滑動時，可使滑動構件朝向彼此不同之方向滑動，故對基板確實地施予滑動構件之滑動所產生的作用。According to the present invention, a revolving mechanism is provided to revolve a sliding member that rotates around a vertical axis, and revolves around a vertical orbital axis so as to have a smaller orbital radius than the diameter of the sliding member; outside the central portion of the back surface of the holding substrate At this time, the central portion of the rear surface of the substrate is processed by sliding the sliding member, and the edge portion of the rear surface of the rotating substrate is processed by sliding the sliding member while the central portion of the rear surface of the substrate is held. Thereby, the central part and the edge part of the back surface of a board | substrate can be processed with high uniformity. In addition, when the sliding member repeatedly slides on each part in the surface of the substrate, the sliding members can be slid in different directions from each other. Therefore, the substrate is surely given the action caused by the sliding of the sliding member.

參考圖1、圖2之俯視圖及縱剖面側視圖，並對本發明之基板處理裝置的一實施形態之研磨裝置1加以說明。此研磨裝置1，藉由砂輪研磨圓形基板即晶圓W的背面，使其粗化。此研磨處理，係於此研磨裝置1所進行之處理後，在設置於將晶圓W表面之光阻膜曝光的曝光機之平台載置晶圓W時，為了抑制晶圓W的背面與平台接觸之面積而進行，細節將於後述內容描述。此外，研磨裝置1，對於進行上述研磨的區域，供給清洗液並藉由刷具刷擦，進行將因研磨處理而產生的異物去除之清洗處理。A polishing apparatus 1 according to an embodiment of the substrate processing apparatus of the present invention will be described with reference to the top view and the longitudinal sectional side view of FIGS. 1 and 2. This polishing apparatus 1 roughens the back surface of the wafer W, which is a circular substrate, by a grinding wheel. This polishing process is performed after the processing performed by this polishing device 1, and when the wafer W is placed on a platform of an exposure machine that exposes a photoresist film on the surface of the wafer W, the back surface of the wafer W and the stage are suppressed. The contact area is carried out. Details will be described later. In addition, the polishing device 1 supplies a cleaning liquid to the region where the above-mentioned polishing is performed, and performs a cleaning process of removing foreign matter generated by the polishing process by brushing with a brush.

研磨裝置1，具備基體11、旋轉吸盤12、杯體3、研磨／清洗處理部5、渦旋墊7、砂輪清洗部81、刷具清洗部82、及供給純水作為清洗液之各種噴嘴。基體11形成為俯視呈長方形，藉由設置於研磨裝置1的外部之未圖示的搬運機構，從基體11之長度方向的一端側將晶圓W往研磨裝置1搬運。將此一端側作為前方側而說明。基體11，具備使前後方向為長邊方向之方型的凹部13，此凹部13內構成為晶圓W的處理區域。於此處理區域之前方側，設置旋轉吸盤12。The polishing apparatus 1 includes a base body 11, a rotating suction cup 12, a cup body 3, a polishing / washing processing section 5, a scroll pad 7, a grinding wheel cleaning section 81, a brush cleaning section 82, and various nozzles for supplying pure water as a cleaning liquid. The substrate 11 is formed in a rectangular shape in plan view, and the wafer W is transferred to the polishing device 1 from one end side in the longitudinal direction of the substrate 11 by a transfer mechanism (not shown) provided outside the polishing device 1. This one end side is described as a front side. The base 11 includes a square-shaped concave portion 13 with the front-rear direction being the long-side direction, and the inside of the concave portion 13 constitutes a processing region of the wafer W. A rotary suction cup 12 is provided on the front side of this processing area.

旋轉吸盤12，吸附晶圓W的背面之中央部，水平地保持晶圓W。旋轉吸盤12的下方側經由軸14而與旋轉機構15連接，旋轉機構15以使保持於旋轉吸盤12之晶圓W繞鉛直軸旋轉的方式，使該旋轉吸盤12旋轉。另，後述之晶圓W的處理例，雖藉由旋轉吸盤12使晶圓W俯視時順時針方向地旋轉，但亦可往反方向旋轉。於旋轉吸盤12之側方，沿著該旋轉吸盤12的旋轉方向，隔著間隔配設垂直的3根支承銷16。另，圖2中僅顯示2根支承銷16。支承銷16構成為藉由升降機構17可任意升降，可在上述搬運機構，與第2保持部即旋轉吸盤12及後述第1保持部即固定吸盤35之間傳遞晶圓W。The chuck 12 is rotated to suck the center portion of the back surface of the wafer W and hold the wafer W horizontally. The lower side of the rotary chuck 12 is connected to a rotary mechanism 15 via a shaft 14. The rotary mechanism 15 rotates the wafer W held by the rotary chuck 12 around a vertical axis. In the processing example of the wafer W described later, although the wafer W is rotated clockwise in plan view by rotating the chuck 12, it may be rotated in the opposite direction. On the side of the rotary chuck 12, three vertical support pins 16 are arranged at intervals along the rotation direction of the rotary chuck 12. In addition, only two support pins 16 are shown in FIG. 2. The support pin 16 is configured to be arbitrarily raised and lowered by a lifting mechanism 17, and the wafer W can be transferred between the conveying mechanism and the rotary chuck 12 as a second holding portion and the fixed chuck 35 as a first holding portion described later.

以包圍上述旋轉吸盤12、旋轉機構15、支承銷16、及升降機構17的方式，設置從基體11之底部向上方延伸的圓筒部，構成為氣刀18。氣刀18之上端面，呈朝向內側傾斜的傾斜面。於該傾斜面，在圓周方向隔著間隔設置朝向上方噴吐例如空氣之噴吐口21。在將晶圓W的背面吸附保持於旋轉吸盤12時，氣刀18之上端接近晶圓W的背面，從噴吐口21噴吐空氣，藉而防止清洗液附著於晶圓W的背面中央部。此外，在將晶圓W保持於旋轉吸盤12之前，為了使晶圓W的背面中央部乾燥而進行該空氣之噴吐。A cylindrical portion extending upward from the bottom of the base body 11 is provided so as to surround the rotary chuck 12, the rotation mechanism 15, the support pin 16, and the lifting mechanism 17, and is configured as an air knife 18. The upper end surface of the air knife 18 is an inclined surface inclined toward the inside. The inclined surface is provided with an ejection port 21 for ejecting, for example, air upward in the circumferential direction at intervals. When the back surface of the wafer W is sucked and held on the rotary chuck 12, the upper end of the air knife 18 is close to the back surface of the wafer W, and air is sprayed from the ejection port 21 to prevent the cleaning liquid from adhering to the center portion of the back surface of the wafer W. Before the wafer W is held on the spin chuck 12, the air is sprayed in order to dry the center portion of the back surface of the wafer W.

於基體11的凹部13之底部，設置用於將從晶圓W落下至凹部13內的廢液去除之排液口22。在較排液口22更為靠近氣刀18的位置，設置將凹部13內排氣之豎起的排氣管23。藉由在晶圓W之處理中進行來自該排氣管23的排氣，而抑制從晶圓W飛散之清洗液、及因研磨而產生的晶圓W之刮屑往凹部13的外側飛散。圖2中，24為從氣刀18往外方延伸之凸緣。凸緣24的外端部在排氣管23之外側往下方彎曲而位於較排氣管23之上端更下方的位置，抑制廢液往排氣管23流入。A drain port 22 is provided at the bottom of the recessed portion 13 of the base body 11 for removing waste liquid dropped from the wafer W into the recessed portion 13. At a position closer to the air knife 18 than the liquid discharge port 22, an evacuation pipe 23 is provided to elevate the air in the recess 13. The exhaust from the exhaust pipe 23 is performed during the processing of the wafer W, so that the cleaning liquid scattered from the wafer W and the scraps of the wafer W generated by polishing are prevented from scattering to the outside of the recess 13. In FIG. 2, 24 is a flange extending outward from the air knife 18. The outer end portion of the flange 24 is bent downward on the outer side of the exhaust pipe 23 and is located at a position lower than the upper end of the exhaust pipe 23 to suppress the inflow of waste liquid into the exhaust pipe 23.

杯體3，以包圍氣刀18的方式，形成為上端部往內側突出之圓筒狀。此杯體3在處理中包圍晶圓W，抑制廢液從晶圓W飛散。支持部31，分別從杯體3之左右的外壁朝向凹部13之外緣上方伸出，與設置於基體11的水平移動機構32連接。藉由水平移動機構32可使杯體3於凹部13內在前後方向移動。此外，於水平移動機構32的下方設置升降機構33，藉由升降機構33可使水平移動機構32升降。亦即，杯體3可升降。The cup body 3 is formed in a cylindrical shape with an upper end portion protruding inward so as to surround the air knife 18. This cup body 3 surrounds the wafer W during processing, and suppresses scattering of the waste liquid from the wafer W. The support portions 31 project from the outer walls of the left and right sides of the cup body 3 above the outer edge of the recessed portion 13, respectively, and are connected to a horizontal movement mechanism 32 provided on the base body 11. The cup 3 can be moved in the recessed portion 13 in the front-back direction by the horizontal moving mechanism 32. In addition, a lifting mechanism 33 is provided below the horizontal moving mechanism 32, and the horizontal moving mechanism 32 can be raised and lowered by the lifting mechanism 33. That is, the cup body 3 can be raised and lowered.

於杯體3，設置從左右夾著旋轉吸盤12並在前後方向延伸之2個橋部34。於橋部34設置固定吸盤35。此固定吸盤35，吸附晶圓W的背面之中央部的外側區域，水平地保持晶圓W。分別在處理晶圓W的背面中央部時將晶圓W保持於固定吸盤35，在處理晶圓W的背面之中央部的外側區域時將晶圓W保持於旋轉吸盤12。The cup body 3 is provided with two bridge portions 34 extending in the front-rear direction with the rotary suction cup 12 sandwiched from the left and right. A fixed suction cup 35 is provided on the bridge portion 34. The fixed chuck 35 holds the wafer W horizontally by sucking the outer region of the central portion of the back surface of the wafer W. The wafer W is held on the fixed chuck 35 when the central portion of the back surface of the wafer W is processed, and the wafer W is held on the rotary chuck 12 when the outer region of the central portion of the back surface of the wafer W is processed.

圖中，36為周緣部清洗噴嘴，在將晶圓W保持於旋轉吸盤12時，朝向晶圓W的背面之周緣部，往斜上方噴吐純水。圖中，37為背面清洗噴嘴，朝向斜後上方噴吐純水。在處理晶圓W的背面中央部時，藉由固定吸盤35將晶圓W保持於對該晶圓W的背面中央部供給從背面清洗噴嘴37噴吐之純水的位置。此外，此背面清洗噴嘴37，設置為在將晶圓W保持於旋轉吸盤12時，往晶圓W的背面之中央部的外側區域噴吐純水。In the figure, 36 is a peripheral edge cleaning nozzle, and when the wafer W is held on the rotary chuck 12, pure water is sprayed obliquely upward toward the peripheral edge portion of the back surface of the wafer W. In the figure, 37 is a rear cleaning nozzle, which sprays pure water diagonally upward and backward. When the central portion of the back surface of the wafer W is processed, the wafer W is held at a position where the central portion of the rear surface of the wafer W is supplied with pure water sprayed from the rear cleaning nozzle 37 by the fixed chuck 35. In addition, the back surface cleaning nozzle 37 is provided to spray pure water toward the outer region of the central portion of the back surface of the wafer W when the wafer W is held on the spin chuck 12.

從後方向前方觀察，於基體11中在凹部13之左側，設置藉由移動機構25在前後方向移動之升降機構26。而藉由升降機構26可任意升降的機械臂27，從該升降機構26朝向右側伸出；於該機械臂27的前端部，設置朝向斜左下方噴吐純水之表面清洗噴嘴28，可往保持於旋轉吸盤12之晶圓W的表面之中心部噴吐純水。於凹部13的後方側，設置成為表面清洗噴嘴28之待機部的凹部29；表面清洗噴嘴28，藉由移動機構25及升降機構26，而在凹部29內、與上述對晶圓W噴吐純水的位置之間移動。As viewed from the front in the rear direction, a lift mechanism 26 that moves in the front-back direction by a moving mechanism 25 is provided on the left side of the recess 13 in the base body 11. A mechanical arm 27 that can be raised and lowered arbitrarily by the lifting mechanism 26 extends from the lifting mechanism 26 to the right side; a front surface of the robot arm 27 is provided with a surface cleaning nozzle 28 that sprays pure water diagonally downward and to the left and can be held Pure water is sprayed on the center of the surface of the wafer W of the rotary chuck 12. On the rear side of the recessed portion 13, a recessed portion 29 serving as a standby portion of the surface cleaning nozzle 28 is provided; the surface cleaning nozzle 28 uses the moving mechanism 25 and the lifting mechanism 26 to spray pure water in the recessed portion 29 with the wafer W as described above. Between positions.

接著，對研磨／清洗處理部5加以說明。研磨／清洗處理部5，由水平移動機構51、旋轉機構52、升降機構53與54、研磨機構61、及清洗機構62構成。水平移動機構51，設置為於凹部13內在前後方向延伸；旋轉機構52，藉由水平移動機構51，而可在前後方向從凹部13內之後端部移動至氣刀18之前方。此外，旋轉機構52之上部側，構成為水平的圓形之平台，此平台可繞其垂直的中心軸旋轉。於此旋轉機構52之平台上，在圓周方向隔著間隔設置升降機構53、54。於升降機構53上，以可藉由該升降機構53任意升降的方式設置研磨機構61；於升降機構54上，以可藉由該升降機構54任意升降的方式設置清洗機構62。藉由此升降機構53、54所進行的升降、水平移動機構51所進行的水平移動、及旋轉機構52所進行的旋轉之協同合作，研磨機構61及清洗機構62可在杯體3的內側與杯體3的外側之間移動。此水平移動機構51及上述與杯體3連接的水平移動機構32，構成改變研磨機構61及清洗機構62對於晶圓W之水平方向的相對位置之相對移動機構。Next, the polishing / cleaning processing unit 5 will be described. The polishing / cleaning processing unit 5 includes a horizontal movement mechanism 51, a rotation mechanism 52, lifting mechanisms 53 and 54, a polishing mechanism 61, and a cleaning mechanism 62. The horizontal movement mechanism 51 is provided to extend in the front-rear direction in the recessed portion 13; and the rotation mechanism 52 can move from the rear end portion in the recessed portion 13 to the front of the air knife 18 in the front-rear direction by the horizontal movement mechanism 51. In addition, the upper side of the rotating mechanism 52 is configured as a horizontal circular platform, and the platform can rotate about its vertical central axis. Lifting mechanisms 53 and 54 are provided on the platform of the rotating mechanism 52 at intervals in the circumferential direction. A grinding mechanism 61 is provided on the lifting mechanism 53 in such a manner that the lifting mechanism 53 can be arbitrarily raised and lowered; and a washing mechanism 62 is provided in the lifting mechanism 54 in a manner that can be arbitrarily raised and lowered by the lifting mechanism 54. With the cooperation of the lifting and lowering by the lifting mechanisms 53 and 54, the horizontal movement by the horizontal moving mechanism 51, and the rotation by the rotating mechanism 52, the grinding mechanism 61 and the cleaning mechanism 62 can communicate with the inside of the cup body 3. The cup body 3 moves between the outer sides. This horizontal movement mechanism 51 and the above-mentioned horizontal movement mechanism 32 connected to the cup 3 constitute a relative movement mechanism that changes the relative positions of the polishing mechanism 61 and the cleaning mechanism 62 with respect to the horizontal direction of the wafer W.

研磨機構61與清洗機構62彼此略相同地構成，此處作為代表，亦參考圖3之縱剖面側視圖對研磨機構61加以說明。研磨機構61，具備砂輪63、支持板64、公轉板65、及公轉機構即驅動單元66。支持板64為水平的圓板，例如於其邊緣部上，將上述砂輪63沿著該支持板64之圓周方向等間隔地配置6個（參考圖1）。砂輪63例如為粒度60000號之鑽石砂輪，形成為水平的圓板狀，藉由擦過晶圓W的背面而使該晶圓W的背面粗化。於支持板64的背面之中心部，設置垂直的第1自轉用軸601。The polishing mechanism 61 and the cleaning mechanism 62 are configured substantially the same as each other. As a representative here, the polishing mechanism 61 will also be described with reference to a longitudinal cross-sectional side view of FIG. 3. The polishing mechanism 61 includes a grinding wheel 63, a support plate 64, a revolution plate 65, and a drive unit 66 which is a revolution mechanism. The supporting plate 64 is a horizontal circular plate. For example, on the edge portion, six grinding wheels 63 are arranged at regular intervals along the circumferential direction of the supporting plate 64 (see FIG. 1). The grinding wheel 63 is, for example, a diamond grinding wheel with a grain size of 60,000, is formed in a horizontal disc shape, and the back surface of the wafer W is roughened by rubbing the back surface of the wafer W. A vertical first rotation shaft 601 is provided at the center portion of the back surface of the support plate 64.

於支持板64的下方水平地設置上述公轉板65，該公轉板65構成為圓板狀。藉由設置於該公轉板65之支持部602，將上述第1自轉用軸601支持在該公轉板65上。支持部602具備軸承603，其係用於將自轉用軸601，以可繞圖中由P1表示之垂直的軸任意旋轉之方式支持。圖中，604為齒輪，設置於第1自轉用軸601，將軸P1作為旋轉軸而旋轉。The above-mentioned revolving plate 65 is horizontally provided below the support plate 64, and the revolving plate 65 is formed in a circular plate shape. The first rotation shaft 601 is supported on the revolution plate 65 by a support portion 602 provided on the revolution plate 65. The support portion 602 includes a bearing 603 for supporting the rotation shaft 601 so as to be arbitrarily rotatable about a vertical axis indicated by P1 in the figure. In the figure, 604 is a gear, which is provided on the first rotation shaft 601 and rotates the shaft P1 as a rotation shaft.

於公轉板65的下方，設置構成驅動單元66之箱體605。從公轉板65之中心部，使垂直的公轉用圓筒606朝向箱體605內伸出，藉由軸承607，將公轉板65對於箱體605以可繞圖中由P2表示之垂直的軸旋轉之方式支持。公轉用圓筒606之下端部設置於箱體605內，構成為將軸P2作為旋轉軸旋轉的齒輪608。Below the revolving plate 65, a box 605 constituting the driving unit 66 is provided. From the center of the revolution plate 65, the vertical revolution cylinder 606 is extended toward the box 605. With the bearing 607, the revolution plate 65 can be rotated with respect to the box 605 about a vertical axis indicated by P2 in the figure. Way to support. The lower end of the revolving cylinder 606 is provided in the case 605 and is configured as a gear 608 that rotates the shaft P2 as a rotation shaft.

此外，設置貫通上述公轉用圓筒606之垂直的第2自轉用軸609。第2自轉用軸609之上端部構成為齒輪610，與第1自轉用軸601的齒輪604囓合。第2自轉用軸609之下端部構成為齒輪611。此等第2自轉用軸609、齒輪610與611，以軸P2作為旋轉軸而旋轉。此外，圖中，612為軸承，以可對公轉用圓筒606旋轉的方式支持第2自轉用軸609。In addition, a vertical second rotation shaft 609 penetrating the revolving cylinder 606 is provided. The upper end portion of the second rotation shaft 609 is configured as a gear 610 and meshes with the gear 604 of the first rotation shaft 601. A lower end portion of the second rotation shaft 609 is configured as a gear 611. These second rotation shafts 609 and gears 610 and 611 rotate with the shaft P2 as a rotation axis. In the figure, 612 is a bearing and supports the second rotation shaft 609 so as to be rotatable about the revolution cylinder 606.

於箱體605內，設置構成驅動單元66之自轉用馬達67及公轉用馬達68，分別使設置於自轉用馬達67的齒輪613與自轉用軸609的齒輪611囓合，使設置於公轉用馬達68的齒輪614與設置於公轉用圓筒606的齒輪608囓合。藉由此等構成，使支持板64藉由自轉用馬達67，公轉板65藉由公轉用馬達68，彼此獨立旋轉。因此，可使支持板64繞軸P1自轉並繞軸P2公轉，故有分別將軸P1稱作自轉軸，將軸P2稱作公轉軸而記載之情況。另，後述處理例中，支持板64，俯視時逆時針方向地自轉，且俯視時順時針方向地公轉。然則，作為自轉的方向及公轉的方向並不限於此一例子，例如亦可皆為俯視時順時針方向地旋轉。In the case 605, a rotation motor 67 and a revolution motor 68 constituting the driving unit 66 are provided, and the gear 613 provided in the rotation motor 67 and the gear 611 of the rotation shaft 609 are meshed with each other, so that the rotation motor 68 is provided in the revolution motor 68. The gear 614 meshes with a gear 608 provided in the revolving cylinder 606. With such a configuration, the support plate 64 is caused to rotate independently of each other by the rotation motor 67 and the revolution plate 65 by the revolution motor 68. Therefore, the support plate 64 can be rotated around the axis P1 and revolved around the axis P2. Therefore, the axis P1 may be referred to as a rotation axis and the axis P2 may be referred to as a revolution axis. In the processing example described later, the support plate 64 rotates counterclockwise in a plan view, and revolves clockwise in a plan view. However, the direction of rotation and the direction of revolution are not limited to this example, and both of them may be rotated clockwise in a plan view, for example.

圖4為研磨機構61之俯視圖。如此圖所示，支持板64的直徑R1，較支持板64的公轉半徑R2更大。晶圓W的背面之研磨處理，係以下述方式進行：使砂輪63接觸晶圓W的背面，並使支持板64繞自轉軸P1自轉且重複繞公轉軸P2公轉，藉而使該砂輪63對晶圓W的背面滑動。而關於晶圓W的背面之中央部的研磨處理，係藉由下述方式進行：以固定吸盤35在靜止之狀態下保持晶圓W，如此地使支持板64自轉及公轉。如同上述，藉由設定R1、R2而使砂輪63通過較支持板64之公轉軌道的外緣更為內側之全部區域，故即便如此地使晶圓W靜止，藉由將支持板64之公轉軌道配置為與晶圓W的背面之中央部重疊，仍可進行該背面之中央部全體的研磨處理。FIG. 4 is a plan view of the polishing mechanism 61. As shown in the figure, the diameter R1 of the support plate 64 is larger than the revolution radius R2 of the support plate 64. The grinding process of the back surface of the wafer W is performed in the following manner: The grinding wheel 63 is brought into contact with the back surface of the wafer W, and the support plate 64 is rotated around the rotation axis P1 and repeatedly revolved around the rotation axis P2. The back surface of the wafer W slides. The polishing process of the central portion of the back surface of the wafer W is performed by holding the wafer W with the fixed chuck 35 stationary, and thus rotating and revolving the support plate 64. As described above, by setting R1 and R2, the grinding wheel 63 passes through the entire area more inward than the outer edge of the orbit of the support plate 64, so even if the wafer W is stationary, the orbit of the support plate 64 is kept still. It arrange | positions so that it may overlap the center part of the back surface of the wafer W, and the whole center part of this back surface can be polished.

作為清洗機構62之與研磨機構61的差異點，列舉在支持板64中取代砂輪63而設置圓形之刷具69的點，刷具69及支持板64構成為清洗構件（參考圖1、圖2）。藉由使刷具69擦過晶圓W的背面，而將因研磨處理而產生，附著在晶圓W的背面之微粒去除。As a difference between the cleaning mechanism 62 and the polishing mechanism 61, a point is provided in which a circular brush 69 is provided in the support plate 64 instead of the grinding wheel 63. The brush 69 and the support plate 64 are configured as cleaning members (refer to FIG. 1 and FIG. 2). By brushing the brush 69 over the back surface of the wafer W, the particles generated by the polishing process and attached to the back surface of the wafer W are removed.

接著，對於晶圓W的高度限制部即渦旋墊7加以說明。此渦旋墊7設置2個，在上述氣刀18之後方側，於俯視時杯體3所包圍的區域中，對氣刀18於左側、右側分別配置。圖5顯示渦旋墊7之縱剖面側視圖。渦旋墊7構成為扁平且水平的略圓形之塊狀，將晶圓W保持在旋轉吸盤12時，其頂面接近晶圓W的背面之邊緣部。Next, the scroll pad 7 which is a height restriction portion of the wafer W will be described. Two scroll pads 7 are provided. The air knife 18 is disposed on the left side and the right side of the area surrounded by the cup 3 in a plan view on the rear side of the air knife 18. FIG. 5 shows a longitudinal sectional side view of the scroll pad 7. The scroll pad 7 is configured as a flat, horizontal, and slightly circular block. When the wafer W is held on the spin chuck 12, its top surface is close to the edge portion of the back surface of the wafer W.

於渦旋墊7的頂面，形成沿著該渦旋墊7圓周之圓形環狀的溝71。於形成此溝71之外側的側面，沿著該溝71的圓周方向，隔著間隔使複數個空氣之噴吐口72開口。噴吐口72，與設置於渦旋墊7之流路73相連接，將流路73與空氣供給管74的一端連接。空氣供給管74的另一端，經由流量調整部75而與空氣供給源76連接。流量調整部75，具備閥、質量流量控制器，依據來自後述控制部10之控制訊號，調整對渦旋墊7供給的空氣之流量。A circular ring-shaped groove 71 is formed on the top surface of the scroll pad 7 along the circumference of the scroll pad 7. A plurality of air ejection ports 72 are opened on the side surface on the outer side of the groove 71 along the circumferential direction of the groove 71 at intervals. The discharge port 72 is connected to a flow path 73 provided in the scroll pad 7, and connects the flow path 73 to one end of the air supply pipe 74. The other end of the air supply pipe 74 is connected to an air supply source 76 via a flow rate adjustment unit 75. The flow rate adjustment unit 75 includes a valve and a mass flow controller, and adjusts a flow rate of air supplied to the scroll pad 7 based on a control signal from a control unit 10 described later.

如同上述，在渦旋墊7的頂面接近晶圓W的背面之邊緣部的狀態下，從噴吐口72噴吐空氣。由溝71引導的空氣，於圖5中如箭頭所示地在渦旋墊7與晶圓W的背面之間形成迴旋流，從形成在該渦旋墊7與晶圓W之間的間隙往渦旋墊7之外方流動。在上述迴旋流之中心部中產生負壓，將晶圓W之邊緣部中的位於該渦旋墊7正上方之區域，藉由該負壓而朝向渦旋墊7，即朝向下方吸引。若藉由流量調整部75從噴吐口72噴吐的空氣之流量越大，可使上述負壓增大。亦即，渦旋墊7，構成為可調整吸引壓力。As described above, the air is ejected from the ejection port 72 in a state where the top surface of the scroll pad 7 is close to the edge portion of the back surface of the wafer W. The air guided by the groove 71 forms a swirling flow between the scroll pad 7 and the back surface of the wafer W as shown by an arrow in FIG. 5. The air flows from the gap formed between the scroll pad 7 and the wafer W toward The scroll pad 7 flows outside. A negative pressure is generated in the center portion of the swirling flow, and a region of the edge portion of the wafer W that is directly above the scroll pad 7 is attracted toward the scroll pad 7 by the negative pressure, that is, the suction is directed downward. When the flow rate of the air ejected from the ejection port 72 by the flow rate adjustment unit 75 is increased, the negative pressure can be increased. That is, the scroll pad 7 is configured to adjust the suction pressure.

此渦旋墊7，防止在砂輪63或刷具69向上方抵緊晶圓W的背面並對晶圓W滑動時，抬起晶圓W之邊緣部。亦即，渦旋墊7，對於晶圓W以不接觸方式限制該晶圓W之邊緣部的高度，使晶圓W對砂輪63及刷具69密接，在晶圓W與砂輪63及刷具69之間產生足夠的摩擦力，確實地進行研磨處理及清洗處理。2片渦旋墊7，在如同後述地使設置有砂輪63、刷具69的各支持板64在載置於旋轉吸盤12的晶圓W公轉而加以處理時，從晶圓W之中心部觀察此公轉軌道，對於該公轉軌道分別配置為位於左側、右側。如此地藉由以夾著公轉軌道的方式配置渦旋墊7，而更為確實地限制晶圓W之邊緣部的高度。The scroll pad 7 prevents the edge portion of the wafer W from being lifted when the grinding wheel 63 or the brush 69 abuts against the back surface of the wafer W and slides the wafer W upward. That is, the scroll pad 7 limits the height of the edge portion of the wafer W in a non-contact manner to the wafer W, so that the wafer W is in close contact with the grinding wheel 63 and the brush 69, and the wafer W is in close contact with the grinding wheel 63 and the brush. Sufficient frictional force is generated between 69, and the grinding and cleaning processes are performed reliably. The two scroll pads 7 are viewed from the center of the wafer W when the supporting plates 64 provided with the grinding wheel 63 and the brush 69 are revolved and processed as described later. The orbits are arranged on the left and right sides of the orbit, respectively. By arranging the scroll pad 7 in such a manner as to sandwich the orbit in this manner, the height of the edge portion of the wafer W is more reliably restricted.

此外，如圖1、圖2所示，於基體11的凹部13內之後方側，設置上述砂輪清洗部81及刷具清洗部82。亦參考圖6之縱剖面側視圖並對砂輪清洗部81加以說明。砂輪清洗部81具備水平且扁平的圓形部83，此圓形部83之邊緣部形成往下方突出的突出部84。圓形部83及突出部84所包圍而形成的空間，構成為藉由研磨／清洗處理部5之各部的動作而可收納研磨機構61之各砂輪63的收納空間85，收納空間85的徑，為了如此地收納砂輪63而構成為較支持板64的徑更大。此外，於圓形部83之下部，例如設置由鑽石構成的修整器86。於突出部84之內側的側壁，使往收納空間85噴吐純水之噴吐口87朝向側方開口。在以升降機構53使砂輪63抵緊修整器86的狀態，從噴吐口87噴吐純水並使支持板64自轉，藉而進行砂輪63的修整。亦即，將塞住砂輪63的刮屑去除並進行砂輪63的修整。In addition, as shown in FIGS. 1 and 2, the above-mentioned grinding wheel cleaning section 81 and brush cleaning section 82 are provided on the rear side inside the recessed portion 13 of the base body 11. The grinding wheel cleaning unit 81 will be described with reference to a longitudinal sectional side view of FIG. 6 as well. The grinding wheel cleaning unit 81 includes a horizontal and flat circular portion 83, and an edge portion of the circular portion 83 forms a protruding portion 84 protruding downward. The space formed by the circular portion 83 and the protruding portion 84 is configured to accommodate the storage space 85 and the diameter of the storage space 85 of each of the grinding wheels 63 of the grinding mechanism 61 by the operations of the various parts of the polishing / cleaning processing unit 5. In order to store the grinding wheel 63 in this way, the diameter is larger than that of the support plate 64. A trimmer 86 made of, for example, a diamond is provided below the circular portion 83. A spraying port 87 for discharging pure water into the storage space 85 is opened to the side wall on the inner side wall of the protruding portion 84. In a state where the grinding wheel 63 is pressed against the dresser 86 with the lifting mechanism 53, pure water is sprayed from the discharge port 87 and the support plate 64 is rotated, thereby dressing the grinding wheel 63. That is, the shavings that plug the grinding wheel 63 are removed and the dressing of the grinding wheel 63 is performed.

刷具清洗部82，除了未在收納空間85設置修整器86以外，與砂輪清洗部81同樣地構成。於此刷具清洗部82的收納空間85，藉由研磨／清洗處理部5之各部的動作收納清洗機構62之刷具69，藉由使清洗機構62之支持板64自轉並往該收納空間85噴吐純水，而進行刷具69的清洗。另，圖2中，省略此刷具清洗部82之顯示。The brush cleaning unit 82 is configured in the same manner as the grinding wheel cleaning unit 81 except that the dresser 86 is not provided in the storage space 85. Here, the storage space 85 of the brush cleaning section 82 stores the brushes 69 of the cleaning mechanism 62 by the actions of the various parts of the grinding / washing processing section 5, and the support plate 64 of the cleaning mechanism 62 is rotated to the storage space 85. Pure water is sprayed and the brush 69 is cleaned. In addition, in FIG. 2, the display of the brush cleaning unit 82 is omitted.

關於砂輪63的修整及刷具69的清洗，亦可設定預先進行之時間點。例如可在每當處理既定數量的晶圓W，或處理既定數量的晶圓W批次時進行其等的修整及清洗。其他，亦可定期地進行該修整及清洗、或在使用者由後述控制部10指示時進行。此外，亦可藉由以後述背面拍攝模組141取得的影像資料，若判定為未適當進行晶圓W之研磨處理，則進行砂輪63的修整。亦即，可因應該判定而決定是否進行該修整。Regarding the dressing of the grinding wheel 63 and the cleaning of the brushes 69, a time point may be set in advance. For example, whenever a predetermined number of wafers W are processed, or when a predetermined number of wafers W are processed, their trimming and cleaning can be performed. Alternatively, the trimming and cleaning may be performed periodically, or when a user instructs the control unit 10 to be described later. In addition, if it is determined that the grinding process of the wafer W has not been appropriately performed from the image data obtained by the back-side imaging module 141 described later, the dressing of the grinding wheel 63 may be performed. That is, whether or not to perform the trimming may be decided as a result of the judgment.

圖2中，80為純水供給源，構成為可對周緣部清洗噴嘴36、背面清洗噴嘴37、表面清洗噴嘴28、砂輪清洗部81、及刷具清洗部82分別獨立供給純水。In FIG. 2, 80 is a pure water supply source, and is configured to independently supply pure water to the peripheral portion cleaning nozzle 36, the back surface cleaning nozzle 37, the surface cleaning nozzle 28, the grinding wheel cleaning portion 81, and the brush cleaning portion 82.

於此研磨裝置1，設置由電腦構成之控制部10，控制部10具備程式。此程式組裝有步驟群，以可對晶圓W進行後述一系列之處理動作的方式，往研磨裝置1之各部輸出控制訊號，而可控制該各部的動作。具體而言，控制下述動作：旋轉機構15所進行之旋轉吸盤12的轉速；升降機構33及水平移動機構32所進行之杯體3的移動；升降機構17所進行之支承銷16的升降；構成研磨／清洗處理部5之各部的動作；流量調整部75所進行之對渦旋墊7之空氣的供給量；從純水供給源80對各噴嘴、砂輪清洗部81及刷具清洗部82之純水的供給等。此程式，例如以儲存在硬碟、光碟、磁光碟（MO）、記憶卡等記錄媒體之狀態儲存於控制部10。The polishing apparatus 1 is provided with a control unit 10 composed of a computer, and the control unit 10 includes a program. This program is assembled with a group of steps to output a control signal to each part of the polishing apparatus 1 so that a series of processing operations described below can be performed on the wafer W, and the operations of each part can be controlled. Specifically, the following actions are controlled: the rotation speed of the rotary sucker 12 by the rotation mechanism 15; the movement of the cup 3 by the lifting mechanism 33 and the horizontal movement mechanism 32; the lifting and lowering of the support pin 16 by the lifting mechanism 17; Operations of each part constituting the grinding / washing processing part 5; the amount of air supplied to the scroll pad 7 by the flow adjustment part 75; each nozzle, the grinding wheel cleaning part 81, and the brush cleaning part 82 from the pure water supply source 80 Supply of pure water. This program is stored in the control unit 10 in a state of being stored in a recording medium such as a hard disk, an optical disk, a magneto-optical disk (MO), and a memory card, for example.

接著，參考該研磨裝置1之概略俯視圖圖7～圖13、及晶圓W之側視圖圖14～圖16，並對研磨裝置1的晶圓W之處理加以說明。另，圖7～圖13中，在進行研磨機構61所進行之研磨時以鏈線表示清洗機構62，在進行清洗機構62所進行之清洗時以鏈線表示研磨機構61。Next, referring to FIGS. 7 to 13, which are schematic plan views of the polishing apparatus 1, and FIGS. 14 to 16, which are side views of the wafer W, the processing of the wafer W of the polishing apparatus 1 will be described. In FIGS. 7 to 13, the cleaning mechanism 62 is indicated by a chain line during polishing performed by the polishing mechanism 61, and the polishing mechanism 61 is indicated by a chain line during cleaning performed by the cleaning mechanism 62.

在研磨機構61及清洗機構62，例如位於基體11的凹部13內之後方側的待機位置（圖1所示的位置），且杯體3其中心位於與旋轉吸盤12之中心重疊的基準位置（圖1所示的位置）之狀態，藉由研磨裝置1之外部的搬運機構，將晶圓W往該研磨裝置1搬運。若晶圓W之中心部位於旋轉吸盤12的上方，則支承銷16上升而支持晶圓W。而後，使杯體3上升俾以使固定吸盤35位於較旋轉吸盤12更高的位置後，使支承銷16下降，將該晶圓W往固定吸盤35傳遞，將晶圓W的背面之中央部的外側區域，吸附保持在該固定吸盤35（圖7）。接著，使杯體3往後方移動，俾以使晶圓W之中央部較氣刀18位於更後方。The grinding mechanism 61 and the cleaning mechanism 62 are, for example, located in a standby position (position shown in FIG. 1) on the rear side in the recess 13 of the base 11, and the center of the cup 3 is located at a reference position overlapping the center of the rotary suction cup 12 ( In the state shown in FIG. 1), the wafer W is transferred to the polishing apparatus 1 by a transfer mechanism outside the polishing apparatus 1. When the center portion of the wafer W is positioned above the spin chuck 12, the support pin 16 is raised to support the wafer W. Then, the cup body 3 is raised so that the fixed chuck 35 is positioned higher than the rotary chuck 12, the support pin 16 is lowered, the wafer W is transferred to the fixed chuck 35, and the central portion of the back surface of the wafer W is transferred. The outer region is held by the fixed suction cup 35 (FIG. 7). Next, the cup body 3 is moved rearward, so that the central portion of the wafer W is positioned further rearward than the air knife 18.

研磨機構61及清洗機構62前進，通過杯體3的下方側，往杯體3之內側移動。而後，研磨機構61上升，以研磨機構61之公轉軸P2與晶圓W之中心重疊的狀態，使砂輪63抵緊晶圓W的背面，則該研磨機構61之支持板64自轉及公轉，以砂輪63研磨晶圓W之中央部（圖8、圖14）。藉由支持板64的自轉及公轉，在晶圓W的背面之中央部內的各部中，從彼此不同的方向重複接受砂輪63所進行之擦過而形成溝。The polishing mechanism 61 and the cleaning mechanism 62 advance, and move to the inside of the cup body 3 through the lower side of the cup body 3. Then, the polishing mechanism 61 rises, and the grinding wheel 63 is pressed against the back of the wafer W in a state where the revolving axis P2 of the polishing mechanism 61 overlaps the center of the wafer W, and the support plate 64 of the polishing mechanism 61 rotates and revolves to The grinding wheel 63 polishes the center portion of the wafer W (FIGS. 8 and 14). By the rotation and revolution of the support plate 64, grooves are formed by repeatedly receiving the rubbing by the grinding wheel 63 from different directions from each other in the central portion of the back surface of the wafer W.

而後，停止研磨機構61之支持板64的自轉及公轉，使研磨機構61下降而砂輪63離開晶圓W的背面。而後，使清洗機構62水平移動至該清洗機構62之公轉軸P2與晶圓W之中心重疊的位置後上升，使刷具69抵緊晶圓W的背面。接著，使清洗機構62之支持板64自轉及公轉，刷具69擦過晶圓W的背面中央部，並從背面清洗噴嘴37往該晶圓W的背面中央部噴吐純水（圖9）。藉由此等刷具69所進行的擦過與純水的供給，而將附著在晶圓W之中央部的背面之刮屑去除。Then, the rotation and revolution of the support plate 64 of the polishing mechanism 61 are stopped, the polishing mechanism 61 is lowered, and the grinding wheel 63 is separated from the back surface of the wafer W. Then, the cleaning mechanism 62 is horizontally moved to a position where the revolution axis P2 of the cleaning mechanism 62 overlaps with the center of the wafer W, and then raised, so that the brush 69 is pressed against the back surface of the wafer W. Next, the support plate 64 of the cleaning mechanism 62 is rotated and revolved, and the brush 69 is rubbed across the central portion of the back surface of the wafer W, and pure water is sprayed from the rear cleaning nozzle 37 toward the central portion of the back surface of the wafer W (FIG. 9). By the rubbing performed by the brush 69 and the supply of pure water, the scrapings adhering to the back surface of the center portion of the wafer W are removed.

而後，停止清洗機構62之支持板64的自轉及公轉，使清洗機構62下降而刷具69離開晶圓W的背面。杯體朝向基準位置後退，並從氣刀18往與杯體3一同移動中之晶圓W的背面之中央部噴吐空氣，使該背面之中央部乾燥。在基準位置使杯體3下降，使固定吸盤35往旋轉吸盤12的下方移動，藉由旋轉吸盤12吸附保持晶圓W的背面中心部，並解除固定吸盤35所進行之晶圓W的保持。Then, the rotation and revolution of the support plate 64 of the cleaning mechanism 62 are stopped, the cleaning mechanism 62 is lowered, and the brush 69 is separated from the back surface of the wafer W. The cup is moved back toward the reference position, and air is sprayed from the air knife 18 toward the central portion of the back surface of the wafer W that is moving with the cup 3 to dry the central portion of the back surface. The cup 3 is lowered at the reference position, the fixed chuck 35 is moved below the rotary chuck 12, the center of the back surface of the wafer W is held by the rotary chuck 12, and the holding of the wafer W by the fixed chuck 35 is released.

在旋轉吸盤12之前方，俯視時研磨機構61在2片渦旋墊7所夾著的區域水平地移動。接著，以第1流量對渦旋墊7供給空氣，將該晶圓W之邊緣部往下方吸引，且使研磨機構61上升而砂輪63抵緊晶圓W的背面。而後，使研磨機構61之支持板64自轉及公轉並使晶圓W旋轉。藉此，將與經研磨之晶圓W的背面之中央部鄰接的環狀區域（使其為第1環狀區域），以砂輪63研磨（圖10、圖15）。與研磨晶圓W的背面之中央部時同樣地，藉由支持板64的自轉及公轉，使第1環狀區域之各部從彼此不同的方向重複接受砂輪63所進行之擦過而形成溝。Before the chuck 12 is rotated, the polishing mechanism 61 moves horizontally in a region sandwiched by the two scroll pads 7 in a plan view. Next, the scroll pad 7 is supplied with air at a first flow rate, the edge portion of the wafer W is sucked downward, the polishing mechanism 61 is raised, and the grinding wheel 63 is pressed against the back surface of the wafer W. Then, the support plate 64 of the polishing mechanism 61 is rotated and revolved, and the wafer W is rotated. Thereby, the ring-shaped area (it is made into the 1st ring-shaped area) adjacent to the center part of the back surface of the polished wafer W is grind | polished with the grinding wheel 63 (FIG. 10, FIG. 15). As in the case of polishing the central portion of the back surface of the wafer W, the parts of the first annular region are repeatedly subjected to rubbing by the grinding wheel 63 from different directions by the rotation and revolution of the support plate 64 to form grooves.

而後，停止研磨機構61之支持板64的自轉及公轉，使研磨機構61下降後，稍微後退。之後，使往渦旋墊7供給的空氣之流量上升而成為較第1流量更大的第2流量，使吸引旋轉之晶圓W的吸引壓力上升，並使研磨機構61上升而砂輪63抵緊該晶圓W的背面。之後，使研磨機構61之支持板64自轉及公轉。藉此，將晶圓W的背面中包含周緣部之環狀區域（第2環狀區域），以砂輪63研磨（圖11、圖16）。例如，此第2環狀區域之內周側，與已研磨完成之第1環狀區域重疊。如此地藉由研磨第2環狀區域，而在從第1環狀區域的外側至晶圓W之周緣的區域，亦與第1環狀區域及晶圓W之中央部同樣地形成溝。After that, the rotation and revolution of the support plate 64 of the polishing mechanism 61 are stopped, and the polishing mechanism 61 is lowered and then slightly retracted. After that, the flow rate of the air supplied to the scroll pad 7 is increased to a second flow rate larger than the first flow rate, the suction pressure of the suction wafer W is increased, the polishing mechanism 61 is raised, and the grinding wheel 63 is pressed against The back surface of the wafer W. After that, the support plate 64 of the polishing mechanism 61 is rotated and revolved. Thereby, the ring-shaped region (the second ring-shaped region) including the peripheral edge portion on the back surface of the wafer W is polished with the grinding wheel 63 (FIGS. 11 and 16). For example, the inner peripheral side of this second annular region overlaps the first annular region that has been polished. By polishing the second annular region in this manner, grooves are formed in the same manner as in the first annular region and the central portion of the wafer W in the region from the outside of the first annular region to the periphery of the wafer W.

而後，若停止研磨機構61之支持板64的自轉及公轉，使研磨機構61下降而砂輪63離開晶圓W的背面，則在旋轉吸盤12之前方，俯視時清洗機構62在2片渦旋墊7所夾著的區域水平地移動，並使對渦旋墊7供給的空氣之流量降低而成為第1流量，使吸引旋轉之晶圓W的吸引壓力降低。而後，使清洗機構62上升而刷具69抵緊該晶圓W的背面，使清洗機構62之支持板64自轉及公轉，藉由刷具69擦過上述第1環狀區域（圖12）。Then, if the rotation and revolution of the support plate 64 of the polishing mechanism 61 are stopped, the polishing mechanism 61 is lowered and the grinding wheel 63 is separated from the back of the wafer W, the cleaning mechanism 62 is placed on two scroll pads in front of the rotating chuck 12 in plan view The area sandwiched by 7 is moved horizontally, and the flow rate of the air supplied to the scroll pad 7 is reduced to a first flow rate, so that the suction pressure for sucking the rotating wafer W is reduced. Then, the cleaning mechanism 62 is raised and the brush 69 abuts against the back surface of the wafer W, and the support plate 64 of the cleaning mechanism 62 is rotated and revolved, and the brush 69 passes over the first annular region (FIG. 12).

如此地進行刷具69所進行之擦過，另一方面，進行從表面清洗噴嘴28往晶圓W的表面之純水的噴吐、從周緣部清洗噴嘴36往晶圓W的背面邊緣部之純水的噴吐、從背面清洗噴嘴37往晶圓W的背面之較邊緣部更為內側區域之純水的噴吐、以及來自氣刀18之空氣的噴吐。藉由刷具69所進行的擦過與純水的供給，將附著於晶圓W之刮屑去除。此外，藉由從氣刀18噴吐出的空氣，防止純水附著於晶圓W的背面中央部。In this way, the rubbing performed by the brush 69 is performed. On the other hand, pure water is sprayed from the surface cleaning nozzle 28 to the surface of the wafer W, and pure water is sprayed from the peripheral edge cleaning nozzle 36 to the back edge of the wafer W. Spraying of pure water from the backside cleaning nozzle 37 toward the inner side of the back surface of the wafer W than the edge portion, and spraying of air from the air knife 18. The scraping adhered to the wafer W is removed by the rubbing performed by the brush 69 and the supply of pure water. In addition, the air sprayed from the air knife 18 prevents pure water from adhering to the center portion of the back surface of the wafer W.

而後，停止清洗機構62之支持板64的自轉及公轉，使清洗機構62下降後，稍微後退。之後，使對渦旋墊7供給的空氣之流量上升而成為第2流量，使吸引旋轉之晶圓W的吸引壓力上升，並使清洗機構62上升而刷具69抵緊該晶圓W的背面。之後，使清洗機構62之支持板64自轉及公轉。藉此，在晶圓W的背面中，以刷具69擦過第2環狀區域（圖13）。持續進行來自氣刀18之空氣的噴吐，及來自各噴嘴28、36、37之純水的噴吐，藉由刷具69所進行的擦過與純水的噴吐，將附著於晶圓W之刮屑去除。Then, the rotation and revolution of the support plate 64 of the cleaning mechanism 62 are stopped, and after the cleaning mechanism 62 is lowered, it is retracted slightly. After that, the flow rate of the air supplied to the scroll pad 7 is increased to become the second flow rate, the suction pressure for sucking the rotating wafer W is increased, the cleaning mechanism 62 is raised, and the brush 69 is pressed against the back surface of the wafer W. . After that, the support plate 64 of the cleaning mechanism 62 is rotated and revolved. Thereby, on the back surface of the wafer W, the second annular region is wiped with the brush 69 (FIG. 13). The spraying of air from the air knife 18 and the spraying of pure water from each of the nozzles 28, 36, 37 are continuously performed, and the scraps attached to the wafer W will be scraped by the brush 69 and the spraying of pure water. Remove.

而後，停止清洗機構62之支持板64的自轉及公轉，使清洗機構62下降而刷具69離開晶圓W的背面，則研磨機構61及清洗機構62通過杯體3的下方而往待機位置後退。之後，停止來自氣刀18之空氣的噴吐，以及來自各噴嘴28、36、37之純水的噴吐，藉由晶圓W之旋轉的離心力將純水從晶圓W甩落，使該晶圓W乾燥，則停止晶圓W的旋轉。而後，支承銷16上升而從旋轉吸盤12推起晶圓W，將其往搬運機構傳遞，從研磨裝置1搬出。Then, the rotation and revolution of the support plate 64 of the cleaning mechanism 62 are stopped, the cleaning mechanism 62 is lowered and the brush 69 is separated from the back of the wafer W, and the polishing mechanism 61 and the cleaning mechanism 62 are retracted to the standby position through the lower part of the cup 3 . Thereafter, the ejection of air from the air knife 18 and the ejection of pure water from the nozzles 28, 36, and 37 are stopped, and the pure water is dropped from the wafer W by the centrifugal force of the rotation of the wafer W to make the wafer When W is dried, the rotation of the wafer W is stopped. Then, the support pin 16 rises, pushes the wafer W from the spin chuck 12, transfers the wafer W to the transfer mechanism, and carries it out from the polishing apparatus 1.

圖17，概略顯示以此研磨裝置1處理完成之晶圓W的背面。如同上述，在晶圓W之中央部中，藉由使自轉體即支持板64及砂輪63繞晶圓W之中心公轉，而圍繞晶圓W之中心，沿著晶圓W圓周形成微小的溝。進一步，在此公轉中使支持板64及砂輪63自轉，故溝亦以朝向圓周方向以外之方向的方式形成。如此地藉由從各方向形成溝，對於晶圓W的背面中央部，使無數個微小之針狀的突起55，成為在晶圓W之面內分布的狀態。另，圖中關於此背面中央部的溝，僅以56概略顯示形成在圓周方向的溝。此外，於虛線之框內，顯示將此背面中央部放大之概略立體圖。FIG. 17 schematically shows the back surface of the wafer W processed by the polishing apparatus 1. As described above, in the central portion of the wafer W, a small groove is formed along the circumference of the wafer W around the center of the wafer W by orbiting the support plate 64 and the grinding wheel 63 around the center of the wafer W. . Further, since the support plate 64 and the grinding wheel 63 are rotated during this revolution, the groove is also formed so as to face in a direction other than the circumferential direction. In this manner, by forming grooves from various directions, numerous minute needle-like protrusions 55 are formed in the center of the back surface of the wafer W and distributed in the surface of the wafer W. In the figure, the grooves formed in the circumferential direction are only schematically shown at 56 in the grooves at the center of the back surface. In addition, a schematic perspective view in which a central portion of the rear surface is enlarged is shown in a dotted frame.

而在晶圓W之邊緣部，即上述第1環狀區域及第2環狀區域中，如同上述，使自轉體即支持板64及砂輪63繞晶圓W之中心公轉並使晶圓W旋轉。因此，支持板64及砂輪63之公轉軌道沿著晶圓W的圓周方向移動，故在該邊緣部中亦形成沿著晶圓W的圓周方向之微小的溝。關於此溝，亦在圖中概略顯示為56。亦即，溝56，涵蓋晶圓W的背面全體而形成為同心圓狀。而因在公轉中支持板64及砂輪63自轉，故與晶圓W之中央部同樣地，作為晶圓W之邊緣部的溝，亦以朝向晶圓W的圓周方向以外之方向的方式形成。如此地藉由從各方向形成溝，而對晶圓W的背面邊緣部，亦與背面中央部同樣地，使無數個微小之針狀的突起55，成為在晶圓W之面內分布的狀態。另，關於此背面邊緣部的溝，亦將在圓周方向以外之方向形成者的顯示省略。此外，在鏈線之框內，顯示將此背面邊緣部放大之概略立體圖。如此地形成在中央部及邊緣部的各突起55之從前端至基端的高度，例如為50nm以下。On the edge portion of the wafer W, that is, in the first annular region and the second annular region, as described above, the support plate 64 and the grinding wheel 63 are rotated around the center of the wafer W and the wafer W is rotated. . Therefore, the orbits of the support plate 64 and the grinding wheel 63 move along the circumferential direction of the wafer W, and therefore, small grooves along the circumferential direction of the wafer W are also formed in the edge portion. This groove is also shown as 56 in the figure. That is, the groove 56 is formed in a concentric circle shape over the entire back surface of the wafer W. Since the support plate 64 and the grinding wheel 63 rotate during the revolution, the grooves as the edge portions of the wafer W are formed in a direction other than the circumferential direction of the wafer W in the same manner as the central portion of the wafer W. In this way, by forming grooves from various directions, the back edge portion of the wafer W is also in the state of being distributed in the surface of the wafer W in the same manner as the center portion of the back surface. . In addition, the grooves on the back edge portion are also omitted from the display of those formed in directions other than the circumferential direction. In addition, in the frame of the chain line, a schematic perspective view showing an enlarged edge portion of the back surface is displayed. The height from the front end to the base end of each protrusion 55 formed in the central portion and the edge portion in this manner is, for example, 50 nm or less.

將如同上述地將以研磨裝置1處理而形成有突起55之晶圓W，載置於設置在曝光機的平台91，在此研磨裝置1所進行之處理前或處理後將形成在該晶圓W的表面之光阻膜沿著既定圖案曝光。在搬運至晶圓W的平台91為止前，對晶圓W的背面不進行粗糙緩解用之處理。粗糙緩解用之處理，具體而言，例如列舉藉由供給氫氟酸等使晶圓W的背面溶解之藥液而將該背面平坦化的處理。The wafer W having the protrusions 55 processed by the polishing apparatus 1 as described above is placed on the stage 91 provided on the exposure machine, and the wafer W is formed on the wafer before or after the processing performed by the polishing apparatus 1. The photoresist film on the surface of W is exposed along a predetermined pattern. Until the wafer W is transferred to the stage 91 of the wafer W, the back surface of the wafer W is not subjected to roughening mitigation processing. The process for roughening mitigation includes, for example, a process of flattening the back surface by supplying a chemical solution in which the back surface of the wafer W is dissolved by supplying hydrofluoric acid or the like.

為了說明研磨裝置1的效果，而說明將晶圓W載置於平台91之樣子。首先，參考圖18之縱剖面側視圖對此平台91的構成加以說明，則此平台91呈圓形，於其表面沿著以該平台91表面之中心為中心的同心圓，將多個銷92彼此隔著間隔配置。此等銷92支持晶圓W的背面。亦即，以晶圓W的背面從平台91之表面浮起的方式支持。In order to explain the effect of the polishing apparatus 1, the state where the wafer W is placed on the stage 91 will be described. First, the structure of the platform 91 will be described with reference to the longitudinal sectional side view of FIG. 18. The platform 91 has a circular shape, and a plurality of pins 92 are formed along a concentric circle centered on the center of the surface of the platform 91. They are arranged at intervals from each other. These pins 92 support the back of the wafer W. That is, it supports so that the back surface of the wafer W may float from the surface of the stage 91.

於平台91的表面中，在不與銷92重疊之位置使多個吸引口93彼此分散而開口。此外，平台91，具備構成為可對該平台91任意升降的升降銷94。此等升降銷94，為了在晶圓W的搬運機構與平台91之間傳遞晶圓W，而使其前端部在平台91的表面中突出没入。升降銷94設置有3根，但圖18中僅顯示2根。On the surface of the platform 91, a plurality of suction ports 93 are dispersed and opened at positions where they do not overlap with the pins 92. The platform 91 includes a lifting pin 94 configured to be arbitrarily movable up and down the platform 91. In order to transfer the wafer W between the conveyance mechanism of the wafer W and the stage 91, the lift pins 94 have their front ends protruding into the surface of the stage 91. Although three lift pins 94 are provided, only two lift pins 94 are shown in FIG. 18.

將如同上述，將在研磨裝置1中經進行研磨處理及清洗處理之晶圓W，藉由搬運機構往平台91搬運，如圖18所示地將其背面支持在升降銷94。由於在搬運至此平台91前為止形成之膜的應力，而例如於晶圓W產生歪曲，此歪曲亦包含翹曲。接著使升降銷94下降。在此升降銷94下降時，從平台91之吸引口93進行吸引。之後，將晶圓W的背面之各部載置於銷92，藉由來自吸引口93之吸引而將晶圓W的背面朝向平台91吸引（圖19）。在圖19的虛線之框內，將此銷92、及與該銷92抵接之晶圓W的背面之縱剖面側面放大顯示。As described above, the wafer W that has been subjected to the polishing process and the cleaning process in the polishing apparatus 1 is transported to the platform 91 by the transport mechanism, and the back surface thereof is supported on the lift pin 94 as shown in FIG. 18. Due to the stress of the film formed before being transported to the platform 91, for example, the wafer W is distorted, and this distortion also includes warping. Then, the lift pin 94 is lowered. When the lift pin 94 is lowered, suction is performed from the suction port 93 of the platform 91. Thereafter, each part of the back surface of the wafer W is placed on the pin 92, and the back surface of the wafer W is attracted toward the stage 91 by suction from the suction port 93 (FIG. 19). In the frame of the dotted line in FIG. 19, the side of the longitudinal cross-section of the back surface of the pin 92 and the wafer W abutting the pin 92 is enlarged.

如同圖17所說明，以涵蓋晶圓W的背面全體之方式，沿著晶圓W的圓周方向在晶圓W的背面形成溝56。亦即，以與銷92的配置對應之方式形成溝56，溝56與溝56之間的突起55接觸平台91的銷92。進一步，此突起95為針狀且微小，故突起95與銷92之接觸面積非常小。因此，作用在晶圓W的背面與銷92之間的摩擦力非常小，故晶圓W的背面對於銷92的頂面具有高的平滑性。如此地藉由具有平滑性及往平台91的吸引，而以拉伸晶圓W的方式矯正其形狀，解決歪曲而使其呈平坦狀態，載置於銷92上（圖20）。如此地對載置於平台91之晶圓W進行曝光照射。As described in FIG. 17, a groove 56 is formed on the back surface of the wafer W along the circumferential direction of the wafer W so as to cover the entire back surface of the wafer W. That is, the grooves 56 are formed in a manner corresponding to the arrangement of the pins 92, and the protrusions 55 between the grooves 56 and 56 contact the pins 92 of the platform 91. Furthermore, since the protrusion 95 is needle-shaped and minute, the contact area between the protrusion 95 and the pin 92 is very small. Therefore, the friction force between the back surface of the wafer W and the pin 92 is very small, so the back surface of the wafer W has high smoothness with respect to the top surface of the pin 92. In this way, the shape of the wafer W is stretched by smoothing and attracting to the platform 91, and the distortion is solved to make it flat, and it is placed on the pin 92 (FIG. 20). In this way, the wafer W placed on the stage 91 is exposed and irradiated.

依上述研磨裝置1，則在以固定吸盤35保持晶圓W的背面之不與中央部重疊的區域時，藉由使研磨機構61之支持板64自轉及公轉，而使設置於該支持板64的砂輪63，在晶圓W的背面之中央部滑動而加以研磨處理。而在以旋轉吸盤12保持晶圓W的背面之中央部並使晶圓W旋轉時，研磨機構61之支持板64自轉及公轉，砂輪63在晶圓W的背面之邊緣部即第1環狀區域及第2環狀區域滑動而加以研磨處理。對於晶圓W的背面之中央部內的各部及邊緣部內的各部，藉由以砂輪63從彼此不同的方向重複擦過而形成微小的多個突起55。如此地，藉由在中央部與邊緣部高均一性地形成微小的突起55，而將晶圓W高平坦性地載置於上述平台91上。而作為高平坦性地載置的結果，在將如此地載置之晶圓W曝光時，抑制曝光的區域從既定區域偏移之情形。因此，可提高疊合之精度。According to the polishing apparatus 1 described above, when the area where the back surface of the wafer W does not overlap with the central portion is held by the fixed chuck 35, the support plate 64 of the polishing mechanism 61 is rotated and revolved to be installed on the support plate 64. The grinding wheel 63 slides on the center portion of the back surface of the wafer W to perform a polishing process. When the central portion of the back surface of the wafer W is held by the rotary chuck 12 and the wafer W is rotated, the support plate 64 of the polishing mechanism 61 rotates and revolves, and the grinding wheel 63 is the first ring on the back portion of the wafer W, which is the first ring. The region and the second annular region are slid and polished. Each part in the central part and each part in the edge part of the back surface of the wafer W is repeatedly rubbed with a grinding wheel 63 from different directions to form minute multiple protrusions 55. As described above, the wafers W are placed on the platform 91 with high flatness by forming minute protrusions 55 with high uniformity in the central portion and the edge portions. On the other hand, as a result of the highly flat placement, when the wafer W thus placed is exposed, it is possible to prevent the exposed area from shifting from a predetermined area. Therefore, the accuracy of superposition can be improved.

此外，此研磨裝置1不必設置保持晶圓W之周緣的保持部，故可使砂輪63及刷具69位於晶圓W的背面之周緣部而加以處理。因此，從此點來看亦可對晶圓W的背面進行均一之處理，能夠以使對於平台91的銷92具有高平滑性之方式形成突起55。此外，在處理晶圓W的背面中央部時，藉由研磨機構61之支持板64的自轉及公轉而形成針狀之突起55。為了形成此等突起55，亦考慮將支持板64配置於晶圓W的背面中央部而進行保持晶圓W之固定吸盤35的旋轉與支持板64的自轉，但如此地成為使保持晶圓W之邊緣部的固定吸盤35旋轉之構成，將造成裝置巨大化。因此，上述研磨裝置1之構成，亦具有可防止裝置的大型化等優點。In addition, since the polishing device 1 does not need to be provided with a holding portion that holds the peripheral edge of the wafer W, the grinding wheel 63 and the brush 69 can be disposed on the peripheral edge portion of the back surface of the wafer W for processing. Therefore, from this point, the back surface of the wafer W can be uniformly processed, and the protrusions 55 can be formed so that the pins 92 of the stage 91 have high smoothness. When processing the central portion of the back surface of the wafer W, needle-shaped protrusions 55 are formed by the rotation and revolution of the support plate 64 of the polishing mechanism 61. In order to form these protrusions 55, it is also considered that the support plate 64 is arranged at the center of the back surface of the wafer W, and the rotation of the fixed chuck 35 holding the wafer W and the rotation of the support plate 64 are considered. The structure of rotating the fixed suction cup 35 at the edge portion makes the device huge. Therefore, the structure of the above-mentioned polishing apparatus 1 also has advantages such as preventing an increase in the size of the apparatus.

進一步，藉由以渦旋墊7進行晶圓W之邊緣部的吸引，而在砂輪63及刷具69抵緊時，防止該邊緣部朝向上方而晶圓W翹曲之情形，使該邊緣部平坦而與各砂輪63及各刷具69密接，確實地進行研磨及清洗。此外，藉由砂輪63及刷具69的抵緊，而在處理較容易發生上述翹曲之第2環狀區域時，相較於處理第1環狀區域時，藉由增高渦旋墊7所產生的吸引壓力，使晶圓W之邊緣部平坦而與各砂輪63及各刷具69密接，確實地進行研磨及清洗。此外，如此地藉由渦旋墊7，對於晶圓W之周緣部亦可確實地進行研磨，故在此周緣部中亦可提高對於曝光機之平台91的平滑性。因此，可更為確實地解決載置於平台91之晶圓W的歪曲。Further, the edge portion of the wafer W is sucked by the scroll pad 7, and when the grinding wheel 63 and the brush 69 are in contact, the edge portion is prevented from facing upward and the wafer W is warped, so that the edge portion is warped. It is flat and in close contact with each grinding wheel 63 and each brush 69, and it performs grinding and cleaning reliably. In addition, due to the abutment of the grinding wheel 63 and the brush 69, when the second annular region where the warpage is more likely to occur is processed, compared with the first annular region, the vortex pad 7 is increased. The generated suction pressure flattens the edge portion of the wafer W and comes into close contact with each of the grinding wheels 63 and each of the brushes 69 to perform grinding and cleaning reliably. In addition, since the peripheral portion of the wafer W can be reliably polished by the scroll pad 7 in this manner, the peripheral portion can also improve the smoothness of the stage 91 of the exposure machine. Therefore, the distortion of the wafer W placed on the stage 91 can be solved more reliably.

在上述研磨處理中研磨晶圓W的背面中央部時，以公轉軸P2與晶圓W之中心重疊的方式進行處理。藉此，在晶圓W的背面之中央部內中，於圓周方向高均一性地形成突起95。因此，更為確實地提高晶圓W之對於平台91的銷92之平滑性，可將晶圓W平坦地載置於平台91上。When the central portion of the back surface of the wafer W is polished in the above-mentioned polishing process, the processing is performed so that the revolution axis P2 and the center of the wafer W overlap. Thereby, in the center part of the back surface of the wafer W, the protrusion 95 is formed with high uniformity in the circumferential direction. Therefore, the smoothness of the wafer W with respect to the pin 92 of the stage 91 can be improved more reliably, and the wafer W can be placed on the stage 91 flatly.

此外，在以固定吸盤35保持晶圓W的背面之不與中央部重疊的區域時，藉由使清洗機構62的自轉體即支持板64自轉及公轉，而使設置於該支持板64之刷具69，在晶圓W的背面之中央部滑動而清洗。而在以旋轉吸盤12保持晶圓W的背面之中央部並使晶圓W旋轉時，使清洗機構62之支持板64自轉及公轉，而刷具69在晶圓W的背面之邊緣部滑動而清洗。亦即，對於晶圓W的背面之中央部內的各部及邊緣部內的各部，藉由以刷具69從彼此不同的方向重複擦過而加以清洗。藉此可高均一性地清洗晶圓W的各部，且可確實地去除刮屑。In addition, when the area of the back surface of the wafer W that does not overlap with the central portion is held by the fixed chuck 35, the support plate 64, which is the rotation body of the cleaning mechanism 62, is rotated and revolved, so that the brush provided on the support plate 64 The tool 69 is slid and cleaned at the center of the back surface of the wafer W. When the center portion of the back surface of the wafer W is held by the rotary chuck 12 and the wafer W is rotated, the support plate 64 of the cleaning mechanism 62 is rotated and revolved, and the brush 69 is slid on the edge portion of the back surface of the wafer W. Cleaning. That is, each part in the central part and each part in the edge part of the back surface of the wafer W is cleaned by repeatedly rubbing with brushes 69 from different directions from each other. Thereby, each part of the wafer W can be cleaned with high uniformity, and scraping can be reliably removed.

支持板64之自轉的轉速例如為600rpm，公轉的轉速例如為15rpm。在研磨或清洗晶圓W之邊緣部時，旋轉吸盤12所產生之晶圓W的轉速，例如為30rpm～45rpm。然則，如此地在晶圓W的轉速較支持板64的公轉轉速更大之情況，若（晶圓W的轉速）／（支持板64的公轉轉速）為整數，則自轉體即支持板64繞晶圓W一圈後，在下次繞圈時亦以與前次繞圈時相同的軌跡繞圈。因此，為了使支持板64以每次繞圈時在晶圓W之面內以不同軌跡描繪的方式移動而微小地形成突起95，宜設定為（晶圓W的轉速）／（支持板64的公轉轉速）成為整數以外之數值。另，亦可使晶圓W的轉速較支持板64的公轉轉速更小。此一情況，從同樣的理由來看，宜設定為（支持板64的公轉轉速）／（晶圓W的轉速）成為整數以外之值。The rotation speed of the support plate 64 is, for example, 600 rpm, and the revolution speed is, for example, 15 rpm. When grinding or cleaning the edge portion of the wafer W, the rotation speed of the wafer W generated by rotating the chuck 12 is, for example, 30 rpm to 45 rpm. However, in this case, when the rotation speed of the wafer W is greater than the rotation speed of the support plate 64, if (the rotation speed of the wafer W) / (the rotation speed of the support plate 64) is an integer, the self-rotation means that the support plate 64 is wound. After one lap of the wafer W, the next lap is also wound on the same trajectory as the previous lap. Therefore, in order to move the support plate 64 in a manner of drawing a different trajectory within the surface of the wafer W every time to make a protrusion 95, it is preferable to set (the rotation speed of the wafer W) / (the speed of the support plate 64) The revolution speed) is a value other than an integer. In addition, the rotation speed of the wafer W can be made smaller than the rotation speed of the supporting plate 64. In this case, for the same reason, it is preferable to set (revolution speed of the support plate 64) / (rotation speed of the wafer W) to a value other than an integer.

而上述研磨處理在研磨機構61研磨第2環狀區域時，設定研磨機構61之位置，俾以使晶圓W之周緣，位在支持板64位於最靠近晶圓W的外側時之離晶圓W中心最遠的位置之砂輪63上方（參考圖16）。如此地設定研磨機構61之位置，係因若該砂輪63位於較晶圓W之周緣更遠離晶圓W之中心的位置，則有該砂輪63因公轉而在朝向晶圓W之中心側移動時碰撞晶圓W之側端的疑慮。基於相同理由，在清洗機構62清洗第2環狀區域時，設定清洗機構62之位置，俾以使晶圓W之周緣，位在支持板64位於最靠近晶圓W的外側時之離晶圓W中心最遠的位置之刷具69上方。In the above-mentioned polishing process, when the polishing mechanism 61 grinds the second annular region, the position of the polishing mechanism 61 is set so that the periphery of the wafer W is located away from the wafer when the support plate 64 is positioned closest to the outside of the wafer W. Above the grinding wheel 63 at the farthest position of the W center (refer to FIG. 16). The position of the polishing mechanism 61 is set in this way because if the grinding wheel 63 is located farther from the center of the wafer W than the periphery of the wafer W, there is a case where the grinding wheel 63 moves toward the center side of the wafer W due to revolution. Doubts about colliding with the side of wafer W. For the same reason, when the cleaning mechanism 62 cleans the second annular region, the position of the cleaning mechanism 62 is set so that the peripheral edge of the wafer W is located away from the wafer when the support plate 64 is positioned closest to the outside of the wafer W. Above the brush 69 at the farthest position in the center of W.

上述處理例，藉由改變研磨機構61之位置，而分別進行第1環狀區域的處理、及第2環狀區域的處理。亦即，將晶圓W之邊緣部的研磨處理分為2次進行，但亦可將研磨機構61之支持板64形成為較大，使該支持板64的公轉軌道構成為從與晶圓W之中央部鄰接的位置至晶圓W之周緣部，藉而一次地將晶圓W之邊緣部研磨處理。同樣地，亦可將清洗機構62之支持板64形成為較大，使該支持板64的公轉軌道構成為從與晶圓W之中央部鄰接的位置至晶圓W之周緣部，藉而一次地將晶圓W之邊緣部清洗處理。In the processing example described above, the processing of the first annular region and the processing of the second annular region are performed separately by changing the position of the polishing mechanism 61. That is, the polishing process of the edge portion of the wafer W is divided into two times. However, the support plate 64 of the polishing mechanism 61 may be formed to be large, and the revolution track of the support plate 64 may be configured to be connected with the wafer W. The position where the central portion is adjacent to the peripheral edge portion of the wafer W is used to polish the edge portion of the wafer W at a time. Similarly, the support plate 64 of the cleaning mechanism 62 may be formed to be large, and the orbit of the support plate 64 may be configured from the position adjacent to the central portion of the wafer W to the peripheral portion of the wafer W, and may be used once. The edge portion of the wafer W is cleaned.

接著，分別參考圖21之俯視圖、圖22之概略縱剖面側視圖，並對包含上述研磨裝置1以作為研磨模組100的塗布／顯影裝置101加以說明。此塗布／顯影裝置101，將載具區塊D1、研磨處理區塊D2、液處理區塊D3、介面區塊D4，於橫向直線狀地連接而構成。在介面區塊D4，連接曝光機D5。後述說明中以區塊D1～D4的配設方向為前後方向，使區塊D1側為前方側，區塊D4側為後方側。往載具區塊D1，從塗布／顯影裝置101之外部搬運收納晶圓W的載具C。載具區塊D1，具備載具C之載置台102、開閉部103、及搬運機構104。搬運機構104，經由開閉部103，從載置於載置台102之載具C，將晶圓W往載具區塊D1內搬運。Next, a coating / developing device 101 including the above-mentioned polishing device 1 as the polishing module 100 will be described with reference to the plan view of FIG. 21 and the schematic longitudinal cross-sectional side view of FIG. 22. This coating / developing device 101 is configured by linearly connecting a carrier block D1, a polishing processing block D2, a liquid processing block D3, and an interface block D4 in a lateral direction. In the interface block D4, an exposure machine D5 is connected. In the following description, the arrangement direction of the blocks D1 to D4 is the front-rear direction, the block D1 side is the front side, and the block D4 side is the rear side. The carrier C containing the wafer W is transferred to the carrier block D1 from the outside of the coating / developing apparatus 101. The carrier block D1 includes a mounting table 102 for a carrier C, an opening / closing section 103, and a conveyance mechanism 104. The conveyance mechanism 104 conveys the wafer W into the carrier block D1 from the carrier C placed on the mounting table 102 via the opening and closing unit 103.

於研磨處理區塊D2之前方側，在搬運機構104可存取的位置，將分別載置晶圓W之傳遞模組TRS11、TRS12彼此疊層而設置。於傳遞模組TRS11、TRS12之後方，設置搬運機構106。而面向後方觀察時，於搬運機構106之右側將上述研磨模組100例如疊層5個而設置；於搬運機構106之左側，將翹曲量量測模組131及背面拍攝模組141彼此疊層而設置。此實施形態中對未使用翹曲量量測模組131及背面拍攝模組141的搬運例加以說明，關於此等模組之構成，將與使用此等模組的搬運例一同在後敘內容說明。搬運機構106，構成為以可在如此地設置於研磨處理區塊D2的各模組，與後述塔架T1所包含的傳遞模組TRS0、TRS10之間傳遞晶圓W的方式任意升降，可繞鉛直軸任意旋轉，且可任意進退。On the front side of the polishing processing block D2, the transfer modules TRS11 and TRS12 on which the wafers W are placed are stacked on each other at positions accessible by the transfer mechanism 104. Behind the transfer modules TRS11 and TRS12, a carrying mechanism 106 is provided. When viewed from the rear, the above polishing module 100 is stacked on the right side of the conveying mechanism 106, for example, five of them are stacked. On the left side of the conveying mechanism 106, the warpage measurement module 131 and the backside shooting module 141 are stacked on each other. Layer. In this embodiment, an example of transportation without using the warpage measurement module 131 and the backside photography module 141 will be described. The configuration of these modules will be described later together with the example of transportation using these modules. Instructions. The conveying mechanism 106 is configured to be able to lift and lower the wafer W in a manner that can be transferred between each module thus installed in the polishing processing block D2 and the transfer modules TRS0 and TRS10 included in the tower T1 described later. The vertical axis can rotate arbitrarily, and can advance and retreat arbitrarily.

液處理區塊D3，從下方依序疊層對晶圓W進行液處理之第1～第6單位區塊E1～E6而構成。單位區塊E1、E2為反射防止膜形成用的單位區塊，彼此同樣地構成。單位區塊E3、E4為光阻膜形成用的單位區塊，彼此同樣地構成。單位區塊E5、E6為顯影處理用的單位區塊，彼此同樣地構成。在各單位區塊中，彼此平行而進行晶圓W的搬運及處理，往同樣地構成之2個單位區塊中的1個搬運晶圓W而加以液處理。The liquid processing block D3 is configured by sequentially stacking first to sixth unit blocks E1 to E6 for performing a liquid process on the wafer W from below. The unit blocks E1 and E2 are unit blocks for forming an antireflection film, and are configured in the same manner as each other. The unit blocks E3 and E4 are unit blocks for forming a resist film, and are configured in the same manner as each other. The unit blocks E5 and E6 are unit blocks for development processing, and are configured in the same manner as each other. In each unit block, the wafer W is transferred and processed in parallel with each other, and the wafer W is transferred to one of the two unit blocks configured in the same manner for liquid processing.

此處參考圖21，並以單位區塊中之第3單位區塊E3為代表而加以說明。於單位區塊E3形成在前後方向延伸之晶圓W的搬運區域107。面向後方觀察，於搬運區域107之右側在前後方向並排設置2個光阻膜形成模組108。光阻膜形成模組108，對晶圓W的表面供給光阻劑作為藥液，形成光阻膜。面向後方觀察，於搬運區域107之左側，將疊層有複數層的加熱模組109，在前後方向設置多個。於上述搬運區域107，設置晶圓W之搬運機構F3。Here, reference is made to FIG. 21 and the third unit block E3 in the unit block will be described as a representative. A transport region 107 of the wafer W extending in the front-back direction is formed in the unit block E3. When viewed from the rear, two photoresist film-forming modules 108 are arranged side by side on the right side of the transport area 107 in the front-rear direction. The photoresist film forming module 108 supplies a photoresist as a chemical solution to the surface of the wafer W to form a photoresist film. When viewed from the rear, a plurality of heating modules 109 are stacked on the left side of the conveying area 107 in the front-rear direction. A transfer mechanism F3 for the wafer W is provided in the transfer area 107.

對於單位區塊E1、E2、E5、E6，說明與單位區塊E3、E4的差異點，則單位區塊E1、E2，取代光阻膜形成模組108而具備反射防止膜形成模組。反射防止膜形成模組，對晶圓W供給用於形成反射防止膜的藥液。單位區塊E5、E6，具備顯影模組以取代光阻膜形成模組108。顯影模組對晶圓W的表面供給顯影液以作為藥液，將藉由曝光機D5沿著既定圖案曝光之光阻膜顯影，形成光阻圖案。除了此等差異，將單位區塊E1～E6彼此同樣地構成。圖22中對於各單位區塊E1～E6之搬運機構，以F1～F6表示。For the unit blocks E1, E2, E5, and E6, the differences from the unit blocks E3 and E4 are described. The unit blocks E1 and E2 are provided with an anti-reflection film forming module instead of the photoresist film forming module 108. The antireflection film forming module supplies a chemical solution for forming an antireflection film to the wafer W. The unit blocks E5 and E6 are provided with a developing module instead of the photoresist film forming module 108. The developing module supplies a developing solution to the surface of the wafer W as a chemical solution, and develops a photoresist film exposed by the exposure machine D5 along a predetermined pattern to form a photoresist pattern. Except for these differences, the unit blocks E1 to E6 are configured similarly to each other. For each unit block E1 to E6 in FIG. 22, the conveying mechanisms are represented by F1 to F6.

於液處理區塊D3之前方側，設置：塔架T1，跨各單位區塊E1～E6上下地延伸；以及搬運機構111，用於對設置於塔架T1之各模組進行晶圓W的傳遞，可任意升降。塔架T1具備彼此疊層之各種模組，但為了方便，省略傳遞模組TRS以外之模組的說明。設置於單位區塊E1～E6之各高度的傳遞模組TRS，可在與該單位區塊E1～E6的各搬運機構F1～F6之間傳遞晶圓W。On the front side of the liquid processing block D3, a tower T1 is provided to extend up and down across each unit block E1 to E6; and a transport mechanism 111 is used to perform wafer W for each module provided on the tower T1. Pass, can be raised and lowered arbitrarily. The tower T1 includes various modules stacked on top of each other, but descriptions of modules other than the transmission module TRS are omitted for convenience. The transfer modules TRS provided at the respective heights of the unit blocks E1 to E6 can transfer the wafers W to and from the transfer mechanisms F1 to F6 of the unit blocks E1 to E6.

介面區塊D4，具備：塔架T2、T3、T4，跨單位區塊E1～E6上下地延伸；以及搬運機構121～123，對各塔架T2～T4搬運晶圓W。搬運機構121，構成為為了對塔架T2與塔架T3進行晶圓W的傳遞而可任意升降。搬運機構122，構成為為了對塔架T2與塔架T4進行晶圓W的傳遞而可任意升降。搬運機構123，在塔架T2與曝光機D5之間進行晶圓W的傳遞。塔架T2係將各種模組彼此疊層而形成，但此處省略傳遞模組以外之模組的說明。此外，於塔架T3、塔架T4亦設置模組，但亦省略此等模組的說明。The interface block D4 includes: towers T2, T3, and T4, which extend up and down across the unit blocks E1 to E6; and transport mechanisms 121 to 123, which transport wafers W to each of the towers T2 to T4. The transport mechanism 121 is configured to be arbitrarily movable in order to transfer the wafer W to the tower T2 and the tower T3. The transport mechanism 122 is configured to be arbitrarily liftable for transferring the wafer W to the tower T2 and the tower T4. The transfer mechanism 123 transfers the wafer W between the tower T2 and the exposure machine D5. The tower T2 is formed by stacking various modules on top of each other, but description of modules other than the transmission module is omitted here. In addition, modules are also provided on the tower T3 and the tower T4, but the description of these modules is also omitted.

對於由此塗布／顯影裝置101及曝光機D5構成之系統中的晶圓W之搬運路徑及處理加以說明。將晶圓W，藉由搬運機構104，從載具C往研磨處理區塊D2之傳遞模組TRS11搬運，接著藉由搬運機構106往研磨模組100搬運，如同圖7～圖16說明地進行研磨處理及清洗處理。而後，藉由搬運機構106，將晶圓W往液處理區塊D3的塔架T1之傳遞模組TRS0搬運。The transport path and processing of the wafer W in the system constituted by the coating / developing device 101 and the exposure machine D5 will be described. The wafer W is transferred from the carrier C to the transfer module TRS11 of the polishing processing block D2 by the transfer mechanism 104, and then transferred to the polishing module 100 by the transfer mechanism 106, as described with reference to Figs. 7 to 16 Grinding and cleaning. Then, the wafer W is transferred to the transfer module TRS0 of the tower T1 of the liquid processing block D3 by the transfer mechanism 106.

從此一傳遞模組TRS0，將晶圓W分配搬運至單位區塊E1、E2。例如在將晶圓W往單位區塊E1傳遞的情況，從該TRS0，對塔架T1之傳遞模組TRS中的與單位區塊E1對應之傳遞模組TRS1（可藉由搬運機構F1傳遞晶圓W之傳遞模組）傳遞晶圓W。此外在將晶圓W往單位區塊E2傳遞的情況，從該TRS0，對塔架T1之傳遞模組TRS中的與單位區塊E2對應之傳遞模組TRS2傳遞晶圓W。此等晶圓W的傳遞係藉由搬運機構111進行。From this transfer module TRS0, the wafer W is distributed and transferred to the unit blocks E1 and E2. For example, when the wafer W is transferred to the unit block E1, from this TRS0, the transfer module TRS1 corresponding to the unit block E1 in the transfer module TRS of the tower T1 (the crystal can be transferred by the transfer mechanism F1) The transfer module of circle W) transfers wafer W. In addition, when the wafer W is transferred to the unit block E2, from this TRS0, the wafer W is transferred to the transfer module TRS2 corresponding to the unit block E2 among the transfer modules TRS of the tower T1. These wafers W are transferred by the transfer mechanism 111.

將如此地分配之晶圓W，以TRS1（TRS2）→反射防止膜形成模組→加熱模組→TRS1（TRS2）的順序搬運，接著藉由搬運機構111分配至與單位區塊E3對應之傳遞模組TRS3、及與單位區塊E4對應之傳遞模組TRS4。將如此地分配至TRS3、TRS4之晶圓W，以TRS3（TRS4）→光阻膜形成模組108→加熱模組109→介面區塊D4的塔架T2之傳遞模組TRS31（TRS41）的順序搬運。而後，藉由搬運機構121、123將此晶圓W在塔架T2、T3間搬運，往曝光機D5搬入，如同圖18～圖20說明地載置於設置在該曝光機D5之平台91。對此晶圓W進行曝光照射，將光阻膜沿著既定圖案曝光。The wafer W thus distributed is transferred in the order of TRS1 (TRS2) → anti-reflection film forming module → heating module → TRS1 (TRS2), and then is distributed by the transfer mechanism 111 to the transfer corresponding to the unit block E3 The module TRS3 and the transmission module TRS4 corresponding to the unit block E4. The wafers W thus allocated to TRS3 and TRS4 are in the order of TRS3 (TRS4) → photoresist film formation module 108 → heating module 109 → transmission module TRS31 (TRS41) of the tower T2 of the interface block D4 Moving. Then, this wafer W is transferred between the towers T2 and T3 by the transfer mechanisms 121 and 123, and carried into the exposure machine D5, and is placed on the platform 91 provided in the exposure machine D5 as explained with reference to FIGS. 18 to 20. This wafer W is exposed to light and the photoresist film is exposed along a predetermined pattern.

將曝光後的晶圓W，藉由搬運機構123、121在塔架T3、T2間搬運，分別搬運至與單位區塊E5、E6對應的塔架T2之傳遞模組TRS51、TRS61。而後，將晶圓W以加熱模組→顯影模組的順序搬運，沿著以曝光機D5曝光的圖案使光阻膜溶解，在晶圓W形成光阻圖案。而後，將晶圓W，往塔架T1之傳遞模組TRS5（TRS6）搬運，藉由搬運機構106搬運至傳遞模組TRS12後，藉由搬運機構104使其返回載具C。The exposed wafer W is transferred between the towers T3 and T2 by the transfer mechanisms 123 and 121 and transferred to the transfer modules TRS51 and TRS61 of the tower T2 corresponding to the unit blocks E5 and E6, respectively. Then, the wafer W is transported in the order of a heating module → a developing module, and the photoresist film is dissolved along the pattern exposed by the exposure machine D5 to form a photoresist pattern on the wafer W. Then, the wafer W is transferred to the transfer module TRS5 (TRS6) of the tower T1, and then transferred to the transfer module TRS12 by the transfer mechanism 106, and then returned to the carrier C by the transfer mechanism 104.

另，作為研磨裝置1，不限為如同上述地作為研磨模組100組裝至塗布／顯影裝置101，亦可設置於塗布／顯影裝置101之外部。此一情況，晶圓W在研磨裝置1接受處理後，往塗布／顯影裝置101搬運而加以處理。另，在組裝於塗布／顯影裝置101的情況，作為研磨模組100，可在將晶圓W搬運至曝光機D5前進行處理即可，故不限於設置在上述場所，例如亦可設置於介面區塊D4。The polishing device 1 is not limited to being assembled to the coating / developing device 101 as the polishing module 100 as described above, and may be provided outside the coating / developing device 101. In this case, after the wafer W is processed by the polishing apparatus 1, it is transported to the coating / developing apparatus 101 for processing. In addition, when it is assembled in the coating / developing device 101, as the polishing module 100, the wafer W can be processed before being transferred to the exposure machine D5, so it is not limited to being installed in the above-mentioned location, and it can also be installed on the interface Block D4.

接著，對於設置於上述研磨處理區塊D2之翹曲量量測模組131加以說明。如圖23所示，例如翹曲量量測模組131，例如具備載置晶圓W的背面之中心部的平台132、及反射型的雷射位移感測器133。雷射位移感測器133，如同圖中虛線所示地對載置於平台132的晶圓W之周緣部照射雷射光。而後，接收其反射光，將反應此一光接收的檢測訊號如同圖中一點鏈線所示地往控制部10發送。控制部10取得從雷射位移感測器133至晶圓W之周緣的距離H1。此距離H1，相當於關於晶圓W之翹曲的資訊。Next, a description will be given of the warpage measurement module 131 provided in the polishing processing block D2. As shown in FIG. 23, for example, the warpage measurement module 131 includes, for example, a stage 132 on which a center portion of the back surface of the wafer W is placed, and a reflective laser displacement sensor 133. The laser displacement sensor 133 irradiates laser light to the peripheral edge portion of the wafer W placed on the stage 132 as shown by a dotted line in the figure. Then, the reflected light is received, and a detection signal reflecting the light reception is sent to the control unit 10 as shown by a chain line in the figure. The control unit 10 obtains a distance H1 from the laser displacement sensor 133 to the peripheral edge of the wafer W. This distance H1 is equivalent to information about the warpage of the wafer W.

於研磨模組100之控制部10，設置儲存有以下關係的記憶體：在處理上述第1環狀區域時往渦旋墊7供給的空氣之第1流量與距離H1的對應關係（使其為第1空氣供給量對應關係）、及在處理上述第2環狀區域時往渦旋墊7供給的空氣之第2流量與距離H1的對應關係（使其為第2空氣供給量對應關係）。The control unit 10 of the polishing module 100 is provided with a memory storing the following relationship: the correspondence relationship between the first flow rate of the air supplied to the scroll pad 7 and the distance H1 when processing the first annular region (make it be Correspondence relationship between the first air supply amount) and the second flow rate of the air supplied to the scroll pad 7 and the distance H1 during processing of the second annular region (make it a second air supply amount correspondence relationship).

對於使用此翹曲量量測模組131的情況之塗布／顯影裝置101中的晶圓W之搬運路徑，以與既述搬運路徑的差異點為中心而加以說明。將從載具C搬運至傳遞模組TRS11的晶圓W，藉由搬運機構106往翹曲量量測模組131搬運，取得上述距離H1。控制部10依據取得的距離H1、第1空氣供給量對應關係、第2空氣供給量對應關係，而決定上述第1流量及第2流量。The conveyance path of the wafer W in the coating / developing device 101 in the case where the warpage measurement module 131 is used will be described centering on the difference from the conveyance path described above. The wafer W transferred from the carrier C to the transfer module TRS11 is transferred to the warpage measurement module 131 by the transfer mechanism 106 to obtain the above-mentioned distance H1. The control unit 10 determines the first flow rate and the second flow rate based on the obtained distance H1, the first air supply amount correspondence relationship, and the second air supply amount correspondence relationship.

而後，將晶圓W從翹曲量量測模組131往研磨模組100搬運，以決定的第1流量、第2流量對渦旋墊7供給空氣，進行該晶圓W之邊緣部的研磨及清洗。具體而言，距離H1越大，則使第1流量及第2流量為越大的值，以使渦旋墊7所產生的吸引壓力變大之方式進行處理。如此地藉由控制渦旋墊7的吸引壓力，而緩解晶圓W之翹曲狀態所造成的影響，可確實地使晶圓W的背面與砂輪63及刷具69密接而進行處理。Then, the wafer W is transferred from the warpage measurement module 131 to the polishing module 100, and air is supplied to the scroll pad 7 at the determined first flow rate and second flow rate, and the edge portion of the wafer W is polished. And cleaning. Specifically, the larger the distance H1 is, the larger the first flow rate and the second flow rate are, and processing is performed so that the suction pressure generated by the scroll pad 7 becomes larger. By controlling the suction pressure of the scroll pad 7 in this way, the influence caused by the warped state of the wafer W is alleviated, and the back surface of the wafer W can be reliably brought into close contact with the grinding wheel 63 and the brush 69 for processing.

接著，參考概略構成圖即圖24，並對背面拍攝模組141加以說明。背面拍攝模組141，具備支持晶圓W的背面周緣部之支持部142，支持部142藉由未圖示的移動機構往橫向移動。進一步，於背面拍攝模組141設置相機143，該相機143，藉由不連續地拍攝以支持部142移動之晶圓W的背面之一部分，而取得晶圓W的背面全體之影像資料。將藉由此相機143取得之影像資料，如同圖中一點鏈線所示地往控制部10發送。若對使用此背面拍攝模組141的情況之搬運路徑加以說明，則將晶圓W以研磨模組100處理後，藉由搬運機構106往背面拍攝模組141搬運，取得上述影像資料。而後，往液處理區塊D3搬運。Next, the rear camera module 141 will be described with reference to FIG. 24, which is a schematic configuration diagram. The back-side imaging module 141 includes a support portion 142 that supports a peripheral portion of the back surface of the wafer W, and the support portion 142 is moved laterally by a moving mechanism (not shown). Further, a camera 143 is provided on the backside shooting module 141, and the camera 143 acquires image data of the entire backside of the wafer W by taking a discontinuous shot of a portion of the backside of the wafer W moved by the support portion 142. The image data obtained by the camera 143 is sent to the control unit 10 as indicated by a chain line in the figure. If the conveying path in the case of using the backside imaging module 141 is described, the wafer W is processed by the polishing module 100 and then transferred to the backside imaging module 141 by the transport mechanism 106 to obtain the above-mentioned image data. Then, it is transferred to the liquid processing block D3.

控制部10藉由取得之影像資料，判定晶圓W的研磨處理是否適當進行，判定為適當進行之情況，將後續的晶圓W與先前的晶圓W（取得使用在判定之影像資料的晶圓W）同樣地以研磨模組100處理。在判定為未適當進行研磨處理之情況，藉由構成控制部10之語音輸出部進行既定的語音輸出，藉由構成控制部10之監測器進行既定的畫面顯示。亦即，發出語音或畫面顯示所產生的警報，對使用者通報異常。其他，亦可在判定為研磨處理並未適當進行之情況中，例如將往渦旋墊7之空氣的供給量即第1流量、第2流量分別設定為增大既定量，在以研磨模組100處理後續的晶圓W之情況，以更大的吸引壓力將晶圓W朝向砂輪63及刷具69吸引。Based on the acquired image data, the control unit 10 determines whether the polishing process of the wafer W is appropriately performed, and if it is judged to be performed appropriately, the subsequent wafer W and the previous wafer W (acquires the crystal data used in the determined image data). Circle W) is similarly processed by the polishing module 100. When it is determined that the grinding process has not been appropriately performed, a predetermined voice output is performed by the voice output section of the configuration control section 10, and a predetermined screen display is performed by a monitor of the configuration control section 10. That is, an alarm generated by voice or screen display is issued to notify the user of the abnormality. Alternatively, when it is determined that the polishing process has not been performed properly, for example, the first flow rate and the second flow rate of the supply amount of air to the scroll pad 7 are set to increase the predetermined amounts, respectively, and the polishing module is used. 100 processes the subsequent wafer W, and attracts the wafer W toward the grinding wheel 63 and the brush 69 with a greater suction pressure.

而使晶圓W與砂輪63及刷具69密接時，在上述各實施形態雖藉由渦旋墊7從晶圓W的下方吸引，但並不限於如此地從下方吸引。圖25、圖26中顯示取代渦旋墊7，設置流體噴吐墊151之例子。此流體噴吐墊151，在載置於旋轉吸盤12之晶圓W上方例如設置2個，分別構成為水平的圓形。流體噴吐墊151與純水供給管152之下游端相連接，純水供給管152之上游端經由流量調整部153而與純水供給源80相連接。流量調整部153依據來自控制部10的控制訊號，調整從純水供給源80往流體噴吐墊151供給的純水之流量。在流體噴吐墊151之下部分散配置多個噴吐孔154，將供給的純水從各噴吐孔154往鉛直下方噴吐。When the wafer W is brought into close contact with the grinding wheel 63 and the brush 69, in each of the embodiments described above, the scroll pad 7 is sucked from below the wafer W, but the suction is not limited to this. 25 and 26 show examples in which a fluid ejection pad 151 is provided instead of the scroll pad 7. The fluid ejection pads 151 are provided, for example, two above the wafer W placed on the rotary chuck 12 and each has a horizontal circular shape. The fluid ejection pad 151 is connected to the downstream end of the pure water supply pipe 152, and the upstream end of the pure water supply pipe 152 is connected to the pure water supply source 80 through the flow rate adjustment unit 153. The flow rate adjustment unit 153 adjusts the flow rate of pure water supplied from the pure water supply source 80 to the fluid ejection pad 151 in accordance with a control signal from the control unit 10. A plurality of ejection holes 154 are partially disposed below the fluid ejection pad 151, and the supplied pure water is ejected vertically from each ejection hole 154.

流體噴吐墊151，在使設置有砂輪63、刷具69之支持板64在載置於旋轉吸盤12的晶圓W公轉而加以處理時，從晶圓W之中心部觀察此公轉軌道，分別配置於該公轉軌道之左側、右側。而俯視觀察時，流體噴吐墊151，對此公轉軌道之左側、右側的各位置噴吐純水而往下方推壓。藉此，使晶圓W的背面之邊緣部與砂輪63及刷具69密接而進行研磨及清洗。藉由流量調整部153調整從流體噴吐墊151噴吐的純水之流量，可調整往晶圓W之下方的推壓力。因此，例如相較於處理第1環狀區域時，將處理第2環狀區域時的純水之流量增大，使該純水所產生的晶圓W之邊緣部的推壓力增大，藉以使晶圓W之邊緣部更為確實地與砂輪63及刷具69密接亦可。此外，作為從流體噴吐墊151噴吐之流體並不限於純水等液體，亦可為空氣等氣體。The fluid ejection pad 151 is arranged when the support plate 64 provided with the grinding wheel 63 and the brush 69 is revolved for processing on the wafer W placed on the rotary chuck 12, and the orbits are observed from the center of the wafer W and disposed separately. On the left and right sides of the orbit. In a plan view, the fluid ejection pad 151 ejects pure water at each position on the left and right sides of the revolution track and pushes it downward. Thereby, the edge portion of the back surface of the wafer W is brought into close contact with the grinding wheel 63 and the brush 69 to perform polishing and cleaning. By adjusting the flow rate of the pure water ejected from the fluid ejection pad 151 by the flow rate adjustment unit 153, the pressing force below the wafer W can be adjusted. Therefore, for example, compared with the case where the first annular region is processed, the flow rate of pure water during the processing of the second annular region is increased, and the pressing force at the edge portion of the wafer W generated by the pure water is increased, thereby It is also possible to make the edge portion of the wafer W more closely contact the grinding wheel 63 and the brush 69. The fluid ejected from the fluid ejection pad 151 is not limited to a liquid such as pure water, and may be a gas such as air.

此外，亦可依據以翹曲量量測模組131測定出之距離H1，決定對渦旋墊7供給的空氣之流量；依據距離H1，決定以此流體噴吐墊151供給的流體之流量。亦即，將距離H1與該流體之流量的對應關係（使其為流體對應關係），先儲存在構成控制部10之記憶體，以模組131取得距離H1後，依據該距離H1與流體對應關係，決定流體之流量。In addition, the flow rate of the air supplied to the scroll pad 7 may be determined based on the distance H1 measured by the warpage measurement module 131; the flow rate of the fluid supplied by the fluid ejection pad 151 may be determined based on the distance H1. That is, the correspondence relationship between the distance H1 and the flow rate of the fluid (making it a fluid correspondence relationship) is first stored in the memory constituting the control unit 10, and after the distance H1 is obtained by the module 131, it corresponds to the fluid according to the distance H1 The relationship determines the flow of the fluid.

此外，亦可在研磨裝置1中不設置清洗機構62，藉由將晶圓W搬運至外部的清洗裝置，而進行研磨後之晶圓W的清洗。然則，藉由將研磨機構61及清洗機構62設置在相同裝置內，而不必在研磨後將晶圓W往清洗裝置搬運，故抑制從研磨開始至清洗處理結束的時間，可追求處理量的改善。此外，本發明，亦可構成為在上述研磨裝置1中並未設置研磨機構61之裝置。亦即，本發明亦可構成為清洗晶圓W之清洗裝置。此清洗裝置，例如可如下地使用：在將晶圓W往曝光機D5搬運前，將附著之異物清洗去除，藉而將晶圓W水平地載置於平台91。本發明，不限為上述各實施形態之構成，可適宜變更，亦可將各實施形態之構成彼此組合。In addition, the polishing apparatus 1 may not be provided with the cleaning mechanism 62, and the wafer W may be cleaned by carrying the wafer W to an external cleaning apparatus. However, since the polishing mechanism 61 and the cleaning mechanism 62 are installed in the same device, it is not necessary to transport the wafer W to the cleaning device after polishing, so the time from the start of polishing to the end of the cleaning process is suppressed, and the improvement of the throughput can be pursued . In addition, the present invention may be configured as a device in which the polishing mechanism 61 is not provided in the polishing device 1 described above. That is, the present invention may be configured as a cleaning device for cleaning the wafer W. This cleaning device can be used, for example, as follows: before the wafer W is transferred to the exposure machine D5, the attached foreign matter is cleaned and removed, and the wafer W is horizontally placed on the platform 91. The present invention is not limited to the configuration of each of the embodiments described above, and may be appropriately changed, or the configurations of the respective embodiments may be combined with each other.

接著對於研磨裝置的另一實施形態之研磨裝置201，以與研磨裝置1的差異點為中心而加以說明。圖27為研磨裝置201之俯視圖，圖28為研磨裝置201之縱剖面前視圖。於此研磨裝置201並未設置渦旋墊7，取代此元件而設置推壓機構211。此推壓機構211，係用於將晶圓W中砂輪63及刷具69移動之區域，從晶圓W的表面側朝向背面側推壓，而抑制砂輪63及刷具69之往上方的推壓所造成之晶圓W的變形，確實地進行此等砂輪63及刷具69所進行的處理之機構。Next, a polishing apparatus 201 according to another embodiment of the polishing apparatus will be described focusing on the differences from the polishing apparatus 1. FIG. 27 is a plan view of the polishing apparatus 201, and FIG. 28 is a front view of a longitudinal section of the polishing apparatus 201. The polishing device 201 is not provided with a scroll pad 7 here, and instead of this element, a pressing mechanism 211 is provided. This pressing mechanism 211 is used to move the grinding wheel 63 and the brush 69 in the wafer W, and pushes the wafer W from the surface side toward the back side, thereby suppressing the pushing of the grinding wheel 63 and the brush 69 upward. The deformation of the wafer W caused by the pressing mechanism is a mechanism that reliably performs the processing performed by the grinding wheels 63 and the brushes 69.

推壓機構211，由機械臂221、旋轉機構222、升降機構223、前後移動機構224、及推壓構件225構成。前後移動機構224在基體11上方前後地移動。圖中，231為用於使前後移動機構224移動之引導件。於此前後移動機構224設置升降機構223，使旋轉機構222升降。旋轉機構222，支持機械臂221之基端側，並使該機械臂221繞垂直軸迴旋。推壓構件225為扁平的圓柱型之構件，設置於機械臂221的前端下部，藉由上述升降機構223的動作而與晶圓W抵接，往下方，即晶圓W的背面方向推壓。另，在未如此地進行晶圓W之推壓時，推壓構件225，在圖27中以鏈線表示之基體11上的待機位置待機。The pressing mechanism 211 includes a robot arm 221, a rotating mechanism 222, a lifting mechanism 223, a forward-backward moving mechanism 224, and a pressing member 225. The forward-backward movement mechanism 224 moves forward and backward above the base 11. In the figure, 231 is a guide for moving the forward-backward movement mechanism 224. An elevating mechanism 223 is provided on the forward-backward moving mechanism 224 to raise and lower the rotating mechanism 222. The rotation mechanism 222 supports the base end side of the robot arm 221 and rotates the robot arm 221 about a vertical axis. The pressing member 225 is a flat cylindrical member, which is provided at the lower portion of the front end of the robot arm 221, and abuts against the wafer W by the operation of the lifting mechanism 223, and presses the wafer W downward, that is, the back surface of the wafer W. When the wafer W is not pressed in this manner, the pressing member 225 waits at a standby position on the base 11 indicated by a chain line in FIG. 27.

亦參考圖29之立體圖及圖30之縱剖面側視圖，並對推壓構件225加以說明。推壓構件225，具備成為該推壓構件225之下部側且呈扁平圓形的推壓部本體226。推壓部本體226之底面以與晶圓W相對向的方式水平地形成，構成為用於推壓晶圓W之推壓面230。推壓部本體226如同後述地由多孔質體構成，其對於往該推壓部本體226供給的清洗液具有液體吸收性，且具有彈性而不破壞晶圓W的表面。更具體而言，推壓部本體226，例如係由以PVA（聚乙烯醇）等樹脂構成之海綿所構成。因此，上述推壓面230構成為其全表面分散配設有多個孔部。此外，晶圓W的徑例如為300mm，在此例子中將推壓構件225的徑L1（參考圖27）形成為50mm程度。如同在後述內容詳述，不限於使推壓構件225的徑成為此等大小。另，推壓構件225如同上述為圓柱，故此推壓構件225的徑L1之大小，為推壓面230的徑之大小。Referring also to the perspective view of FIG. 29 and the longitudinal sectional side view of FIG. 30, the pressing member 225 will be described. The pressing member 225 includes a pressing portion main body 226 which is a lower portion of the pressing member 225 and has a flat circular shape. The bottom surface of the pressing portion body 226 is formed horizontally so as to face the wafer W, and is configured as a pressing surface 230 for pressing the wafer W. The pressing portion main body 226 is composed of a porous body as described later, and is liquid-absorptive to the cleaning liquid supplied to the pressing portion main body 226 and has elasticity without damaging the surface of the wafer W. More specifically, the pressing portion main body 226 is made of, for example, a sponge made of resin such as PVA (polyvinyl alcohol). Therefore, the pressing surface 230 is configured such that a plurality of holes are dispersedly disposed on the entire surface. The diameter of the wafer W is, for example, 300 mm. In this example, the diameter L1 (see FIG. 27) of the pressing member 225 is formed to approximately 50 mm. As described in detail later, the diameter of the pressing member 225 is not limited to such a size. In addition, since the pressing member 225 is a column as described above, the diameter L1 of the pressing member 225 is the diameter of the pressing surface 230.

以被覆推壓部本體226之上側的方式設置圓板狀之被覆部227。此被覆部227，例如由PTFE（聚四氟乙烯）構成。將被覆部227之中心部開口，於此開口設置由PFA（全氟烷氧基氟樹脂）構成的純水供給管228之下端部。純水供給管228之上游側，與純水供給源80相連接，從該純水供給源80往推壓部本體226供給純水。圖30之實線的箭頭顯示供給至推壓部本體226之純水的流動，如此地供給之純水因海綿的毛細管現象而浸透推壓部本體226全體，因被覆部227不具有吸水性之特性及重力之作用而向下方移動，從推壓面230的孔部往晶圓W供給。因此，推壓面的孔部成為純水的供給口。A disc-shaped covering portion 227 is provided so as to cover the upper side of the pressing portion main body 226. This covering portion 227 is made of, for example, PTFE (polytetrafluoroethylene). A center portion of the covering portion 227 is opened, and a lower end portion of a pure water supply pipe 228 made of PFA (perfluoroalkoxyfluoro resin) is provided at the opening. An upstream side of the pure water supply pipe 228 is connected to a pure water supply source 80, and pure water is supplied from the pure water supply source 80 to the pressing portion body 226. The solid line arrow in FIG. 30 shows the flow of the pure water supplied to the pressing portion body 226. The pure water supplied in this way permeates the entire pressing portion body 226 due to the capillary phenomenon of the sponge, and the covering portion 227 does not have a water-absorbing property. Characteristics and the action of gravity move downward, and are supplied to the wafer W from the hole portion of the pressing surface 230. Therefore, the hole portion of the pressing surface becomes a supply port for pure water.

於圖30之虛線的箭頭前端，放大顯示藉由推壓構件225推壓之晶圓W的表面。此推壓構件225所進行之晶圓W的推壓中，藉由往推壓部本體226供給純水，而成為在該推壓部本體226與晶圓W的表面之間夾設有純水240的液膜之狀態。如此地形成液膜而進行推壓，藉以抑制如同上述地因來自背面側的推壓所造成之晶圓W的變形，並進行晶圓W之表面的清洗，將附著於晶圓W的表面之研磨屑等異物去除。At the tip of the dotted arrow in FIG. 30, the surface of the wafer W pushed by the pushing member 225 is enlarged. In the pressing of the wafer W by this pressing member 225, pure water is supplied to the pressing portion body 226, and pure water is interposed between the pressing portion body 226 and the surface of the wafer W. 240 liquid film state. The liquid film is formed and pressed in this way, thereby suppressing the deformation of the wafer W caused by the pressing from the back side as described above, and cleaning the surface of the wafer W, and attaching the surface of the wafer W Remove foreign matter such as abrasives.

此外，於機械臂221，與推壓構件225分開而地另行設置往晶圓W的表面噴吐純水之表面清洗噴嘴232，該表面清洗噴嘴232，經由配管而與純水供給源80連接。在推壓構件225所進行之晶圓W的推壓中，從此表面清洗噴嘴232噴吐純水，藉由此純水之作用亦將附著於晶圓W的表面之異物去除。為了如此地去除異物的目的，使表面清洗噴嘴232朝向晶圓W的外側而往晶圓W上噴吐純水。圖27中之虛線的箭頭，顯示此純水的噴吐方向。此外，圖中的點P3，顯示噴吐出的純水降落在晶圓W之位置的一例。Further, a surface cleaning nozzle 232 that sprays pure water onto the surface of the wafer W is provided separately from the pressing member 225 on the robot arm 221, and the surface cleaning nozzle 232 is connected to the pure water supply source 80 through a pipe. During the pressing of the wafer W by the pressing member 225, pure water is sprayed from the surface cleaning nozzle 232, and foreign matter adhering to the surface of the wafer W is also removed by the action of the pure water. In order to remove foreign matter in this manner, the surface cleaning nozzle 232 is directed toward the outside of the wafer W, and pure water is sprayed onto the wafer W. The dotted arrow in FIG. 27 shows the direction in which the pure water is ejected. In addition, point P3 in the figure shows an example where the discharged pure water falls on the wafer W.

對於研磨裝置201的動作之一例，以與研磨裝置1之動作的差異點為中心，參考圖31～圖33的裝置之俯視圖、及圖34～圖36的裝置之側視圖並加以說明。首先，如同圖8所說明地使研磨機構61的砂輪63抵緊保持於固定吸盤35之晶圓W的背面之中央部，並使推壓構件225，在其中心與研磨機構61的公轉軸P2重疊之狀態下降，夾著晶圓W與砂輪63相對向，推壓晶圓W。而後，對推壓部本體226供給純水240並從表面清洗噴嘴232噴吐純水240。另一方面，進行圖8所說明的研磨機構61之支持板64的自轉及公轉，進行晶圓W之背面中央部的研磨（圖31、圖34）。藉由如同上述地配置推壓構件225，俯視觀察時，推壓構件225推壓砂輪63所通過的區域。An example of the operation of the polishing apparatus 201 will be described with reference to a plan view of the apparatus of FIGS. 31 to 33 and a side view of the apparatus of FIGS. First, as described with reference to FIG. 8, the grinding wheel 63 of the polishing mechanism 61 is held tightly against the center portion of the back surface of the wafer W holding the chuck 35, and the pressing member 225 is centered on the revolving axis P2 of the polishing mechanism 61. The overlapped state is lowered, the wafer W is opposed to the grinding wheel 63, and the wafer W is pressed. Then, the pure water 240 is supplied to the pressing part body 226, and the pure water 240 is ejected from the surface cleaning nozzle 232. On the other hand, the support plate 64 of the polishing mechanism 61 described in FIG. 8 is rotated and revolved to polish the central portion of the back surface of the wafer W (FIGS. 31 and 34). By arranging the pressing member 225 as described above, in a plan view, the pressing member 225 presses the area through which the grinding wheel 63 passes.

接著，如同圖9所說明，取代砂輪63，使刷具69抵緊晶圓W的背面，使清洗機構62之支持板64自轉及公轉，該刷具69擦過而清洗晶圓W的背面之中央部。晶圓W的表面中央部持續進行推壓構件225所進行之推壓。而後，先停止來自推壓部本體226及表面清洗噴嘴232之純水240的供給，將晶圓W從固定吸盤35往旋轉吸盤12傳遞。此傳遞中，推壓構件225從晶圓W表面上方退避。Next, as illustrated in FIG. 9, instead of the grinding wheel 63, the brush 69 is pressed against the back surface of the wafer W, and the support plate 64 of the cleaning mechanism 62 is rotated and revolved. The brush 69 is wiped to clean the center of the back surface of the wafer W. unit. The center of the surface of the wafer W is continuously pressed by the pressing member 225. After that, the supply of the pure water 240 from the pressing part body 226 and the surface cleaning nozzle 232 is stopped, and the wafer W is transferred from the fixed chuck 35 to the rotary chuck 12. During this transfer, the pressing member 225 retracts from above the surface of the wafer W.

而後，使研磨機構61的砂輪63抵緊與已進行過研磨及清洗之晶圓W的背面之中央部鄰接的區域，並以使其中心位於例如與研磨機構61之公轉軸P2重疊的位置之方式使推壓構件225下降，夾著晶圓W與砂輪63相對向，推壓晶圓W。而後，往推壓構件225供給純水240並從表面清洗噴嘴232噴吐純水240。另一方面，進行研磨機構61之支持板64的自轉及公轉、以及旋轉吸盤12所進行之晶圓W的旋轉，進行研磨（圖32）。Then, the grinding wheel 63 of the polishing mechanism 61 is brought into abutment with a region adjacent to the central portion of the back surface of the wafer W that has been polished and cleaned, so that its center is located at, for example, a position overlapping the revolution axis P2 of the polishing mechanism 61 The system lowers the pressing member 225 to face the grinding wheel 63 with the wafer W therebetween, and presses the wafer W. Then, the pure water 240 is supplied to the pressing member 225, and the pure water 240 is ejected from the surface cleaning nozzle 232. On the other hand, the support plate 64 of the polishing mechanism 61 is rotated and revolved, and the wafer W is rotated by rotating the chuck 12 to perform polishing (FIG. 32).

而後，例如保持上述支持板64的公轉中心與推壓構件225彼此之位置關係，使研磨機構61及該推壓構件225往後方直線移動而朝向晶圓W之邊緣部（圖35）。而若公轉的砂輪63之最靠近晶圓W外側的端部位於較晶圓W之周緣略為內側的位置，則停止研磨機構61之後退。亦即，從上方觀察，在砂輪63尚未從晶圓W突出的位置停止研磨機構61之後退。關於推壓構件225則持續後退，當該推壓構件225之後方側的端部位於較晶圓W更為外側，則停止該推壓構件225之後退移動（圖33、圖36）。如此地即便在推壓構件225之一部分位於晶圓W的外側時，俯視觀察時仍成為推壓構件225推壓砂輪63所通過之區域的狀態。Then, for example, the positional relationship between the center of revolution of the support plate 64 and the pressing member 225 is maintained, and the polishing mechanism 61 and the pressing member 225 are linearly moved rearward toward the edge of the wafer W (FIG. 35). If the end of the revolving grinding wheel 63 closest to the outer side of the wafer W is located slightly inward of the peripheral edge of the wafer W, the grinding mechanism 61 is stopped and moved backward. That is, when viewed from above, the polishing mechanism 61 is stopped at a position where the grinding wheel 63 has not yet protruded from the wafer W, and then retracted. The pushing member 225 continues to retreat, and when the rear side end of the pushing member 225 is located further outside than the wafer W, the pushing member 225 is stopped and moved backward (FIG. 33 and FIG. 36). As described above, even when a part of the pressing member 225 is positioned outside the wafer W, the state in which the pressing member 225 pushes the region through which the grinding wheel 63 passes is viewed in plan view.

如同前述，在構成推壓構件225的推壓面230全體形成孔，從推壓面230全體供給純水240，故如此地移動推壓構件225以使端部位於晶圓W的外側，即供給純水240的孔之一部分位於晶圓W的外側，而從位於晶圓W之外側的孔往晶圓W之側面供給純水240。此外，推壓構件225之位於晶圓W的外側之部位，藉由該推壓構件225所具有的復原力向晶圓W之下方突出，與晶圓W的側面抵接。如此地藉由進行清洗液的供給與推壓構件225的抵接，而清洗晶圓W的側面。此處所述之晶圓W的側面，除了包含垂直面以外，亦包含從晶圓W的表面朝向外側下降之傾斜面，即斜角面。另，藉由在上述位置使研磨機構61停止後退，而可防止如此地從晶圓W之側方突出的推壓構件225受到研磨。As described above, holes are formed in the entire pressing surface 230 constituting the pressing member 225, and pure water 240 is supplied from the entire pressing surface 230. Therefore, the pressing member 225 is moved so that the end portion is outside the wafer W, that is, the supply A part of the holes of the pure water 240 is located outside the wafer W, and the pure water 240 is supplied from the holes located outside the wafer W to the side of the wafer W. In addition, a portion of the pressing member 225 located outside the wafer W protrudes downward from the wafer W by the restoring force of the pressing member 225 and abuts against the side surface of the wafer W. In this manner, the side of the wafer W is cleaned by the contact between the supply of the cleaning liquid and the pressing member 225. In addition to the vertical plane, the side surface of the wafer W described herein also includes an inclined plane that is an inclined plane that descends from the surface of the wafer W toward the outside. In addition, by stopping the polishing mechanism 61 at the above-mentioned position, the pressing member 225 protruding from the side of the wafer W in this manner can be prevented from being polished.

而後，使砂輪63、推壓構件225離開晶圓W，並先停止往晶圓W的表面之純水240的供給及晶圓W的旋轉，結束研磨處理。而後，清洗機構62進行與研磨機構61同樣的動作並再度開始晶圓W的旋轉，對晶圓W的背面中央部之外側區域，進行清洗。如此地進行清洗時，推壓構件225進行與圖32、圖33、圖35、圖36所說明之進行晶圓W的背面中央部之外側區域的研磨時相同之動作。亦即，以成為與研磨時的砂輪63與推壓構件225之位置關係相同的位置關係之方式，控制清洗機構62之刷具69與推壓構件225的動作而進行處理。此外，藉由推壓構件225與表面清洗噴嘴232對晶圓W的表面供給純水。而後，在結束對於此晶圓W的背面中央部之外側區域的清洗處理後，使清洗機構62之刷具69及推壓構件225離開晶圓W，停止來自推壓構件225及表面清洗噴嘴232之純水的噴吐，藉由晶圓W之旋轉將純水240從該晶圓W甩落，結束研磨裝置201所進行的處理。Then, the grinding wheel 63 and the pressing member 225 are separated from the wafer W, and the supply of the pure water 240 to the surface of the wafer W and the rotation of the wafer W are stopped first, and the polishing process is terminated. Then, the cleaning mechanism 62 performs the same operation as the polishing mechanism 61 and restarts the rotation of the wafer W, and cleans the area outside the central portion of the back surface of the wafer W. When cleaning is performed in this manner, the pressing member 225 performs the same operation as that in the case where the outer region of the back center portion of the wafer W is polished as described in FIGS. 32, 33, 35, and 36. That is, the operations of the brush 69 and the pressing member 225 of the cleaning mechanism 62 are controlled so as to have the same positional relationship as that of the grinding wheel 63 and the pressing member 225 during polishing. In addition, pure water is supplied to the surface of the wafer W by the pressing member 225 and the surface cleaning nozzle 232. Then, after the cleaning process is performed on the area outside the central portion of the back surface of the wafer W, the brush 69 and the pressing member 225 of the cleaning mechanism 62 are separated from the wafer W, and the pressing member 225 and the surface cleaning nozzle 232 are stopped. By spraying pure water, the pure water 240 is dropped from the wafer W by the rotation of the wafer W, and the processing performed by the polishing apparatus 201 is ended.

依此研磨裝置201，藉由如同上述地配置推壓構件225，而在研磨晶圓W之中央部時及研磨中央部之外側區域時兩者中，推壓構件225位於研磨機構61之支持板64的公轉軌道上。更詳細地敘述，則在俯視觀察時，推壓構件225，推壓與砂輪63因該支持板64的公轉及自轉而移動之區域重疊的區域。因此，抑制砂輪63的推壓所造成之晶圓W的變形而使晶圓W之形狀保持為水平，藉以使晶圓W的背面確實地與該砂輪63密接而加以研磨。此外，對於進行清洗處理之情況，亦因與研磨時同樣地配置推壓構件225，而在清洗機構62之支持板64的公轉軌道上配置推壓構件225，推壓晶圓W，俯視觀察時推壓構件225推壓與刷具69所移動之區域重疊的區域，故使刷具69確實地與晶圓W背面密接而擦過。According to this polishing device 201, the pressing member 225 is arranged as described above, and the pressing member 225 is located on the support plate of the polishing mechanism 61 in both the case where the central portion of the wafer W is polished and the case where the region outside the central portion is polished. 64 on the orbit. To describe in more detail, in a plan view, the pressing member 225 presses an area overlapping an area where the grinding wheel 63 moves due to the revolution and rotation of the support plate 64. Therefore, the deformation of the wafer W caused by the pressing of the grinding wheel 63 is suppressed, and the shape of the wafer W is kept horizontal, so that the back surface of the wafer W is reliably brought into close contact with the grinding wheel 63 and polished. In addition, in the case of performing the cleaning process, the pressing member 225 is also disposed in the same manner as during polishing, and the pressing member 225 is disposed on the revolution track of the support plate 64 of the cleaning mechanism 62 to press the wafer W. When viewed in plan view The pressing member 225 presses the area overlapping the area where the brush 69 is moved, so that the brush 69 is reliably brought into close contact with the back surface of the wafer W and wiped.

而亦可不將推壓構件225之推壓部本體226與上述純水供給管228連接，而係在推壓構件225推壓晶圓W時，推壓部本體226從晶圓W的表面吸收並保持自表面清洗噴嘴232供給至晶圓W表面的純水，藉以進行晶圓W的清洗。如此地推壓部本體226為了可從晶圓W表面吸收液體，而例如宜使上述降落位置P3，如圖27所示地，位在晶圓W的旋轉方向之上游側且為該推壓構件225附近。此外，亦可不設置表面清洗噴嘴232，而僅藉由推壓構件225進行晶圓W之表面的清洗。Alternatively, instead of connecting the pressing part body 226 of the pressing member 225 with the pure water supply pipe 228, when the pressing member 225 presses the wafer W, the pressing part body 226 absorbs from the surface of the wafer W and The pure water supplied from the surface cleaning nozzle 232 to the surface of the wafer W is maintained, and the wafer W is cleaned. In order to absorb the liquid from the surface of the wafer W in this manner, the pressing part body 226 is preferably the above-mentioned landing position P3, for example, as shown in FIG. Near 225. In addition, instead of providing the surface cleaning nozzle 232, the surface of the wafer W may be cleaned only by the pressing member 225.

另，亦可不在推壓機構211設置前後移動機構224，而使推壓構件225以不前後移動的方式進行處理。例如在研磨及清洗晶圓W之中央部時，將推壓構件225配置於圖27以實線表示的位置，以中央部往該推壓構件225推壓的方式藉由固定吸盤35保持晶圓W。而在研磨及清洗晶圓W之中央部的外側區域時，亦將推壓構件225配置於圖27以實線表示的位置，推壓晶圓W之邊緣部。亦即，研磨及清洗晶圓W之中央部的外側區域時，能夠以不進行圖32、圖35等所說明之伴隨研磨機構61及清洗機構62的移動之推壓構件225的移動之方式進行處理。另，能夠以可適當抑制晶圓W的變形之方式，適宜調整推壓構件225的大小。In addition, instead of providing the pressing mechanism 211 with the forward-backward movement mechanism 224, the pressing member 225 may be processed without moving forward and backward. For example, when the central portion of the wafer W is polished and cleaned, the pressing member 225 is arranged at a position shown by a solid line in FIG. 27, and the wafer is held by the fixed chuck 35 so that the central portion presses the pressing member 225. W. When polishing and cleaning the outer region of the center portion of the wafer W, the pressing member 225 is also disposed at a position shown by a solid line in FIG. 27 to press the edge portion of the wafer W. That is, when the outer region of the central portion of the wafer W is polished and cleaned, it can be performed without moving the pressing member 225 accompanying the movement of the polishing mechanism 61 and the cleaning mechanism 62 as described in FIGS. 32 and 35. deal with. In addition, the size of the pressing member 225 can be appropriately adjusted so that the deformation of the wafer W can be appropriately suppressed.

在上述圖31～圖36所示的處理例中，雖在推壓晶圓W之中央部時推壓構件225並未往橫向移動，但在推壓此中央部時推壓構件225往橫向移動亦可。而作為推壓構件225的徑L1（參考圖27），不限於上述例子。圖37所示之推壓構件225的徑L1為10mm。另，亦可例如在推壓機構211之機械臂221，設置與研磨機構61同樣地構成之使支持推壓構件225的支持板64公轉及自轉之機構，於支持板64如同此圖37所示地設置具有較小的徑之推壓構件225。而後，以使砂輪63中之一個與推壓構件225重合，以彼此相同的速度，描繪相同軌跡的方式使推壓構件225移動亦可。亦即，可在研磨時使砂輪63中之一個與推壓構件225夾著晶圓W經常相對向地進行處理。In the processing examples shown in FIGS. 31 to 36 described above, although the pressing member 225 does not move laterally when the central portion of the wafer W is pressed, the pressing member 225 moves laterally when the central portion is pressed. Yes. The diameter L1 of the pressing member 225 (see FIG. 27) is not limited to the above example. The diameter L1 of the pressing member 225 shown in FIG. 37 is 10 mm. Alternatively, for example, a mechanism for revolving and rotating the support plate 64 that supports the pressing member 225 may be provided on the mechanical arm 221 of the pressing mechanism 211 in the same manner as the grinding mechanism 61, as shown in FIG. 37 on the supporting plate 64. A pressing member 225 having a smaller diameter is provided on the ground. Then, the pressing member 225 may be moved so that one of the grinding wheels 63 coincides with the pressing member 225 and the same trajectory is drawn at the same speed as each other. That is, one of the grinding wheels 63 and the pressing member 225 can often be processed to face the wafer W during the polishing.

圖38，顯示推壓構件225的徑L1，為較圖27所示之例子更大些許的80mm之例子。此外，圖39，顯示使推壓構件225的徑L1，為與晶圓W的徑相同之300mm的例子。亦即，圖39之推壓構件225被覆晶圓W的表面全體。在推壓構件225具有如此圖39所示之大小的情況，研磨、清洗晶圓W之中央部時及研磨、清洗晶圓W之中央部的外側區域時，皆以推壓構件225之中心與晶圓W之中心重疊的方式配置該推壓構件225而加以推壓。因此，推壓構件225不限於構成為在對晶圓W之處理中往橫向移動。FIG. 38 shows an example where the diameter L1 of the pressing member 225 is slightly larger than the example shown in FIG. 27 by 80 mm. 39 shows an example in which the diameter L1 of the pressing member 225 is 300 mm, which is the same as the diameter of the wafer W. That is, the pressing member 225 of FIG. 39 covers the entire surface of the wafer W. When the pressing member 225 has a size as shown in FIG. 39, the center of the pressing member 225 and the center of the pressing member 225 are used when grinding and cleaning the central portion of the wafer W and when grinding and cleaning the outer region of the central portion of the wafer W. This pressing member 225 is arranged so that the centers of the wafers W overlap, and is pressed. Therefore, the pressing member 225 is not limited to being configured to move laterally during processing of the wafer W.

若推壓構件225的徑L1過小則有無法充分地推壓晶圓W之疑慮，若徑L1較晶圓W的徑更大則成為推壓構件225具有不需要之大小，故宜使推壓構件225的徑，即該推壓構件225之推壓面230的徑L1為10mm～300mm。此外，如同圖31～圖36所說明地，藉由伴隨研磨機構61的移動使將推壓構件225往橫向移動而進行處理，可使徑L1為較小，例如10mm～100mm，在使其成為此等大小之情況因可在研磨裝置201中抑制使推壓構件225待機之空間，故為較佳態樣。此外，如此地使推壓構件225往橫向移動時，在上述例子中雖藉由前後移動機構224使推壓構件225沿著直線移動，但在往橫向的移動中維持藉由支持板64之公轉及自轉而使砂輪63或刷具69移動的區域，與藉由推壓構件225推壓的區域重疊之狀態即可，因此亦可藉由旋轉機構222使推壓構件225沿著曲線移動。If the diameter L1 of the pressing member 225 is too small, there is a concern that the wafer W cannot be sufficiently pressed. If the diameter L1 is larger than the diameter of the wafer W, the pressing member 225 has an unnecessary size, so it is appropriate to make the pressing The diameter of the member 225, that is, the diameter L1 of the pressing surface 230 of the pressing member 225 is 10 mm to 300 mm. In addition, as described with reference to FIGS. 31 to 36, the diameter L1 can be made smaller by, for example, 10 mm to 100 mm, so that the pressing member 225 can be moved laterally to accompany the movement of the polishing mechanism 61. In the case of such a size, a space in which the pressing member 225 is allowed to stand by can be suppressed in the polishing device 201, and thus it is a preferable aspect. In addition, when the pressing member 225 is moved laterally in this way, although the pressing member 225 is moved in a straight line by the forward-backward movement mechanism 224 in the above example, the revolution of the supporting member 64 is maintained during the lateral movement. As long as the area where the grinding wheel 63 or the brush 69 is rotated by rotation is overlapped with the area pressed by the pressing member 225, the pressing member 225 can also be moved along the curve by the rotation mechanism 222.

進一步，不限於在砂輪63與晶圓W接觸而進行研磨之期間內的全部時間帶中進行推壓構件225所進行之推壓。亦即，亦可僅在砂輪63位於既定位置時，使推壓構件225與砂輪63相對向而夾著晶圓W，推壓晶圓W。關於刷具69，亦可使其僅在位於既定位置時，進行推壓構件225所進行之推壓。晶圓W之邊緣部相較於中心部在受到應力時容易變形，容易發生翹曲，故宜在砂輪63及刷具69位於晶圓W的邊緣部時至少進行推壓構件225所進行之推壓。Further, the pressing member 225 is not limited to be pressed by the pressing member 225 in all the time periods during the period during which the grinding wheel 63 is in contact with the wafer W for polishing. That is, only when the grinding wheel 63 is located at a predetermined position, the pressing member 225 and the grinding wheel 63 may face each other to sandwich the wafer W and press the wafer W. The brush 69 may be pressed by the pressing member 225 only when it is located at a predetermined position. The edge portion of the wafer W is more easily deformed and warped when subjected to stress than the center portion. Therefore, it is preferable to push at least the pushing member 225 when the grinding wheel 63 and the brush 69 are located at the edge portion of the wafer W. Pressure.

此外，作為推壓構件225，在砂輪63或刷具69將晶圓W的背面往上側推壓並移動時與該砂輪63或刷具69相對向而夾著晶圓W即可。亦即，俯視觀察時，使推壓構件225與砂輪63及刷具69重疊即可。因此，作為推壓構件225，不限為圓形，亦可為方形。此外，作為推壓構件225，可如此地推壓晶圓W即可，故不限於例如以多孔質體或彈性體構成，但如同前述，為了防止晶圓W的損傷並進行清洗，宜由多孔質體且彈性體構成。此外，作為從表面清洗噴嘴232及推壓構件225供給之清洗液，不限為純水，若未對形成在晶圓W之表面的膜造成影響，則例如為有機溶媒亦可。另，可將上述各實施形態彼此組合，使其適宜變形。In addition, as the pressing member 225, when the back surface of the wafer W is pushed and moved by the grinding wheel 63 or the brush 69, the wafer W may be opposed to the grinding wheel 63 or the brush 69. That is, the pressing member 225 may be overlapped with the grinding wheel 63 and the brush 69 in a plan view. Therefore, the pressing member 225 is not limited to a circular shape, and may be a square shape. In addition, as the pressing member 225, the wafer W may be pressed in this way, and is not limited to, for example, a porous body or an elastomer. However, as described above, in order to prevent the wafer W from being damaged and cleaned, it is preferable to use a porous body. Plastid and elastomer. In addition, the cleaning liquid supplied from the surface cleaning nozzle 232 and the pressing member 225 is not limited to pure water, and if it does not affect the film formed on the surface of the wafer W, it may be an organic solvent, for example. In addition, the above-mentioned embodiments can be combined with each other to appropriately deform them.

1、201‧‧‧研磨裝置1. 201‧‧‧ grinding device

10‧‧‧控制部10‧‧‧Control Department

100‧‧‧研磨模組100‧‧‧ grinding module

101‧‧‧塗布／顯影裝置101‧‧‧ Coating / Development Device

102‧‧‧載置台102‧‧‧mounting table

103‧‧‧開閉部103‧‧‧Opening and closing department

104、106、111、121、122、123、F1～F6‧‧‧搬運機構104, 106, 111, 121, 122, 123, F1 to F6

107‧‧‧搬運區域107‧‧‧Transportation area

108‧‧‧光阻膜形成模組108‧‧‧Photoresist film forming module

109‧‧‧加熱模組109‧‧‧Heating module

11‧‧‧基體11‧‧‧ substrate

12‧‧‧旋轉吸盤（第2保持部）12‧‧‧Rotating suction cup (second holding section)

13‧‧‧凹部13‧‧‧ recess

131‧‧‧翹曲量量測模組131‧‧‧Warpage measurement module

132‧‧‧平台132‧‧‧platform

133‧‧‧雷射位移感測器133‧‧‧laser displacement sensor

14‧‧‧軸14‧‧‧axis

141‧‧‧背面拍攝模組141‧‧‧Back camera module

142‧‧‧支持部142‧‧‧Support Department

143‧‧‧相機143‧‧‧ Camera

15‧‧‧旋轉機構15‧‧‧rotating mechanism

151‧‧‧流體噴吐墊151‧‧‧ fluid spouting pad

152‧‧‧純水供給管152‧‧‧Pure water supply pipe

153‧‧‧流量調整部153‧‧‧Flow adjustment department

154‧‧‧噴吐孔154‧‧‧Ejection hole

16‧‧‧支承銷16‧‧‧ support pin

17‧‧‧升降機構17‧‧‧ Lifting mechanism

18‧‧‧氣刀18‧‧‧ Air Knife

21‧‧‧噴吐口21‧‧‧ spout

211‧‧‧推壓機構211‧‧‧Pushing mechanism

22‧‧‧排液口22‧‧‧ drain port

221‧‧‧機械臂221‧‧‧Robot

222‧‧‧旋轉機構222‧‧‧Rotating mechanism

223‧‧‧升降機構223‧‧‧Lifting mechanism

224‧‧‧前後移動機構224‧‧‧Back and forth movement mechanism

225‧‧‧推壓構件225‧‧‧Pushing member

226‧‧‧推壓部本體226‧‧‧Pushing body

227‧‧‧被覆部227‧‧‧ Covered Department

228‧‧‧純水供給管228‧‧‧Pure water supply pipe

23‧‧‧排氣管23‧‧‧Exhaust pipe

230‧‧‧推壓面230‧‧‧ Pushing surface

231‧‧‧引導件231‧‧‧Guide

232‧‧‧表面清洗噴嘴232‧‧‧Surface cleaning nozzle

24‧‧‧凸緣24‧‧‧ flange

240‧‧‧純水240‧‧‧ pure water

25‧‧‧移動機構25‧‧‧mobile agency

26‧‧‧升降機構26‧‧‧Lifting mechanism

27‧‧‧機械臂27‧‧‧Robot

28‧‧‧表面清洗噴嘴28‧‧‧Surface cleaning nozzle

29‧‧‧凹部29‧‧‧ recess

3‧‧‧杯體3‧‧‧ cup body

31‧‧‧支持部31‧‧‧Support Department

32‧‧‧水平移動機構32‧‧‧ horizontal movement mechanism

33‧‧‧升降機構33‧‧‧Lifting mechanism

34‧‧‧橋部34‧‧‧Bridge

35‧‧‧固定吸盤（第1保持部）35‧‧‧Fixed suction cup (1st holding section)

36‧‧‧周緣部清洗噴嘴36‧‧‧Surface cleaning nozzle

37‧‧‧背面清洗噴嘴37‧‧‧Back cleaning nozzle

5‧‧‧研磨／清洗處理部5‧‧‧Grinding / cleaning processing department

51‧‧‧水平移動機構51‧‧‧horizontal movement mechanism

52‧‧‧旋轉機構52‧‧‧Rotating mechanism

53、54‧‧‧升降機構53, 54‧‧‧ Lifting mechanism

55‧‧‧突起55‧‧‧ protrusion

56‧‧‧溝56‧‧‧ trench

601‧‧‧第1自轉用軸601‧‧‧1st rotation shaft

602‧‧‧支持部602‧‧‧Support Department

603‧‧‧軸承603‧‧‧bearing

604、608、610、611、613、614‧‧‧齒輪604, 608, 610, 611, 613, 614‧‧‧ gear

605‧‧‧箱體605‧‧‧Box

606‧‧‧公轉用圓筒606‧‧‧Cylinder for revolution

607‧‧‧軸承607‧‧‧bearing

609‧‧‧第2自轉用軸609‧‧‧Second rotation shaft

61‧‧‧研磨機構61‧‧‧grinding mechanism

612‧‧‧軸承612‧‧‧bearing

62‧‧‧清洗機構62‧‧‧cleaning agency

63‧‧‧砂輪（滑動構件）63‧‧‧Grinding wheel (sliding member)

64‧‧‧支持板（滑動構件）64‧‧‧ support plate (sliding member)

65‧‧‧公轉板65‧‧‧ revolution board

66‧‧‧驅動單元（公轉機構）66‧‧‧Drive unit (revolving mechanism)

67‧‧‧自轉用馬達67‧‧‧rotation motor

68‧‧‧公轉用馬達68‧‧‧revolution motor

69‧‧‧刷具69‧‧‧Brush

7‧‧‧渦旋墊7‧‧‧ Vortex pad

71‧‧‧溝71‧‧‧ trench

72‧‧‧噴吐口72‧‧‧ spout

73‧‧‧流路73‧‧‧flow

74‧‧‧空氣供給管74‧‧‧Air supply pipe

75‧‧‧流量調整部75‧‧‧Flow adjustment department

76‧‧‧空氣供給源76‧‧‧Air supply source

80‧‧‧純水供給源80‧‧‧Pure water supply source

81‧‧‧砂輪清洗部81‧‧‧Grinding wheel cleaning department

82‧‧‧刷具清洗部82‧‧‧Brush cleaning department

83‧‧‧圓形部83‧‧‧ round section

84‧‧‧突出部84‧‧‧ protrusion

85‧‧‧收納空間85‧‧‧Storage space

86‧‧‧修整器86‧‧‧Finisher

87‧‧‧噴吐口87‧‧‧Spout

91‧‧‧平台91‧‧‧ platform

92‧‧‧銷92‧‧‧pin

93‧‧‧吸引口93‧‧‧ Attraction

94‧‧‧升降銷94‧‧‧lift pin

95‧‧‧突起95‧‧‧ protrusion

C‧‧‧載具C‧‧‧ Vehicle

D1‧‧‧載具區塊D1‧‧‧ Vehicle Block

D2‧‧‧研磨處理區塊D2‧‧‧Grinding block

D3‧‧‧液處理區塊D3‧‧‧Liquid processing block

D4‧‧‧介面區塊D4‧‧‧Interface Block

D5‧‧‧曝光機D5‧‧‧ exposure machine

E1～E6‧‧‧單位區塊E1 ～ E6‧‧‧‧Unit block

H1L‧‧‧距離H1L‧‧‧Distance

L1‧‧‧徑L1‧‧‧ Trail

P1‧‧‧自轉軸P1‧‧‧rotation shaft

P2‧‧‧公轉軸P2‧‧‧revolution shaft

P3‧‧‧降落位置P3‧‧‧ landing position

R1‧‧‧直徑R1‧‧‧ diameter

R2‧‧‧公轉半徑R2‧‧‧ revolution radius

TRS、TRS0、TRS1、TRS10、TRS11、TRS12、TRS2、TRS3、TRS31、TRS4、TRS41、TRS5、TRS51、TRS6、TRS61‧‧‧傳遞模組TRS, TRS0, TRS1, TRS10, TRS11, TRS12, TRS2, TRS3, TRS31, TRS4, TRS41, TRS5, TRS51, TRS6, and TRS61

T1、T2、T3、T4‧‧‧塔架T1, T2, T3, T4‧‧‧ Tower

W‧‧‧晶圓（基板）W‧‧‧ Wafer (substrate)

圖1係本發明之實施形態的研磨裝置之俯視圖。 圖2係該研磨裝置之縱剖面側視圖。 圖3係設置於該研磨裝置的研磨機構之縱剖面側視圖。 圖4係該研磨機構之俯視圖。 圖5係該渦旋墊之縱剖面側視圖。 圖6係設置於該研磨裝置的砂輪清洗部之縱剖面側視圖。 圖7係用於顯示晶圓之處理步驟的該研磨裝置之俯視圖。 圖8係用於顯示晶圓之處理步驟的該研磨裝置之俯視圖。 圖9係用於顯示晶圓之處理步驟的該研磨裝置之俯視圖。 圖10係用於顯示晶圓之處理步驟的該研磨裝置之俯視圖。 圖11係用於顯示晶圓之處理步驟的該研磨裝置之俯視圖。 圖12係用於顯示晶圓之處理步驟的該研磨裝置之俯視圖。 圖13係用於顯示晶圓之處理步驟的該研磨裝置之俯視圖。 圖14係用於顯示晶圓之處理步驟的該晶圓之側視圖。 圖15係用於顯示晶圓之處理步驟的該晶圓之側視圖。 圖16係用於顯示晶圓之處理步驟的該晶圓之側視圖。 圖17係顯示晶圓的背面之概略俯視圖。 圖18係顯示藉由該研磨裝置粗化處理的晶圓之側視圖。 圖19係顯示藉由該研磨裝置粗化處理的晶圓之側視圖。 圖20係顯示藉由該研磨裝置粗化處理的晶圓之側視圖。 圖21係具備該研磨裝置的塗布／顯影裝置之俯視圖。 圖22係該塗布／顯影裝置之概略縱剖面側視圖。 圖23係設置於該塗布／顯影裝置的模組之概略構成圖。 圖24係設置於該塗布／顯影裝置的模組之概略構成圖。 圖25係顯示該研磨機構的另一構成之縱剖面側視圖。 圖26係顯示該研磨機構的另一構成之俯視圖。 圖27係本發明之另一實施形態的研磨裝置之俯視圖。 圖28係該研磨裝置之縱剖面側視圖。 圖29係設置於該研磨裝置的推壓構件之底視立體圖。 圖30係該推壓構件之縱剖面側視圖。 圖31係顯示該研磨裝置的動作之俯視圖。 圖32係顯示該研磨裝置的動作之俯視圖。 圖33係顯示該研磨裝置的動作之俯視圖。 圖34係顯示該研磨裝置的動作之側視圖。 圖35係顯示該研磨裝置的動作之側視圖。 圖36係顯示該研磨裝置的動作之側視圖。 圖37係顯示該推壓構件的另一構成之俯視圖。 圖38係顯示該推壓構件的另一構成之俯視圖。 圖39係顯示該推壓構件的另一構成之俯視圖。FIG. 1 is a plan view of a polishing apparatus according to an embodiment of the present invention. Fig. 2 is a longitudinal sectional side view of the polishing apparatus. Fig. 3 is a longitudinal sectional side view of a polishing mechanism provided in the polishing apparatus. Fig. 4 is a plan view of the polishing mechanism. Fig. 5 is a longitudinal sectional side view of the scroll pad. FIG. 6 is a longitudinal cross-sectional side view of a grinding wheel cleaning section provided in the polishing apparatus. FIG. 7 is a plan view of the polishing apparatus for showing the processing steps of a wafer. FIG. 8 is a top view of the polishing apparatus for showing the processing steps of a wafer. FIG. 9 is a top view of the polishing apparatus for showing the processing steps of a wafer. FIG. 10 is a plan view of the polishing apparatus for showing the processing steps of a wafer. FIG. 11 is a top view of the polishing apparatus for showing processing steps of a wafer. FIG. 12 is a top view of the polishing apparatus for showing the processing steps of a wafer. FIG. 13 is a plan view of the polishing apparatus for showing the processing steps of a wafer. FIG. 14 is a side view of the wafer for showing the processing steps of the wafer. FIG. 15 is a side view of the wafer for showing the processing steps of the wafer. FIG. 16 is a side view of the wafer for showing the processing steps of the wafer. FIG. 17 is a schematic plan view showing a back surface of a wafer. FIG. 18 is a side view showing a wafer roughened by the polishing apparatus. FIG. 19 is a side view showing a wafer roughened by the polishing apparatus. FIG. 20 is a side view showing a wafer roughened by the polishing apparatus. FIG. 21 is a plan view of a coating / developing device including the polishing device. Fig. 22 is a schematic longitudinal sectional side view of the coating / developing apparatus. FIG. 23 is a schematic configuration diagram of a module provided in the coating / developing device. FIG. 24 is a schematic configuration diagram of a module provided in the coating / developing device. Fig. 25 is a longitudinal sectional side view showing another configuration of the polishing mechanism. Fig. 26 is a plan view showing another configuration of the polishing mechanism. Fig. 27 is a plan view of a polishing apparatus according to another embodiment of the present invention. Fig. 28 is a longitudinal sectional side view of the polishing apparatus. FIG. 29 is a bottom perspective view of a pressing member provided in the polishing apparatus. Fig. 30 is a longitudinal sectional side view of the pressing member. FIG. 31 is a plan view showing the operation of the polishing apparatus. Fig. 32 is a plan view showing the operation of the polishing apparatus. FIG. 33 is a plan view showing the operation of the polishing apparatus. Fig. 34 is a side view showing the operation of the polishing apparatus. Fig. 35 is a side view showing the operation of the polishing apparatus. Fig. 36 is a side view showing the operation of the polishing apparatus. FIG. 37 is a plan view showing another configuration of the pressing member. FIG. 38 is a plan view showing another configuration of the pressing member. FIG. 39 is a plan view showing another configuration of the pressing member.

Claims (18)

一種基板處理裝置，包含： 第1保持部，水平地保持基板的背面之不與中央部重疊的區域； 第2保持部，水平地保持該基板的背面之中央部，使其繞鉛直軸旋轉； 滑動構件，為了在該基板的背面滑動而進行處理，繞著鉛直軸自轉； 公轉機構，使自轉中之該滑動構件，以具有較該滑動構件的直徑更小之公轉半徑的方式繞鉛直之公轉軸公轉；以及 相對移動機構，用於以下述方式，使該基板與該滑動構件之公轉軌道的相對位置在水平方向移動：在將該基板保持於該第1保持部時使該滑動構件在該基板的背面之中央部滑動，在將該基板保持於該第2保持部時使該滑動構件在旋轉之該基板的背面之邊緣部滑動。A substrate processing apparatus includes: a first holding portion that horizontally holds an area of a back surface of a substrate that does not overlap with a central portion; a second holding portion that horizontally holds a central portion of the back surface of the substrate so as to rotate around a vertical axis; The sliding member is processed for sliding on the back surface of the substrate, and rotates around a vertical axis; the revolving mechanism causes the sliding member in rotation to rotate around the vertical male with a smaller revolution radius than the diameter of the sliding member. The shaft revolves; and a relative movement mechanism for moving the relative position of the substrate and the orbit of the orbit of the sliding member in the horizontal direction in the following manner: when the substrate is held in the first holding portion, the sliding member is in the The central portion of the rear surface of the substrate slides, and when the substrate is held on the second holding portion, the sliding member slides on an edge portion of the rear surface of the substrate that rotates. 如申請專利範圍第1項之基板處理裝置，更包含： 高度限制部， 其在將該基板保持於該第2保持部時， 藉由進行該基板之邊緣部的吸引或流體往該邊緣部之供給，而限制該基板之邊緣部的高度。For example, the substrate processing apparatus of the scope of application for a patent further includes: a height-limiting portion that, when holding the substrate in the second holding portion, sucks the edge portion of the substrate or the fluid flows to the edge portion. Supply and limit the height of the edge portion of the substrate. 如申請專利範圍第2項之基板處理裝置，其中， 該高度限制部，在從旋轉之該基板的中心觀察該滑動構件時，對該滑動構件之左右的區域分別進行吸引，或對該左右的區域分別進行流體的供給。For example, the substrate processing apparatus of the second patent application range, wherein when the sliding member is viewed from the center of the substrate that rotates, the left and right regions of the sliding member are respectively attracted, or the left and right Each zone is supplied with fluid. 如申請專利範圍第2或3項之基板處理裝置，其中， 在將該基板保持於第2保持部時， 該滑動構件之公轉軌道，分別位於靠近該基板之中心部的第1位置、靠近該基板之周緣部的第2位置； 與該公轉軌道位於該第1位置時相較，在該公轉軌道位於該第2位置時，該高度限制部之吸引壓力或對該基板供給的流體之流量較大。For example, in the substrate processing apparatus for which the scope of patent application is 2 or 3, when the substrate is held in the second holding portion, the orbits of the sliding member are respectively located at the first position near the center portion of the substrate and near the substrate. The second position of the peripheral edge portion of the substrate; compared with when the orbit is located at the first position, when the orbit is located at the second position, the suction pressure of the height restriction portion or the flow rate of the fluid supplied to the substrate is relatively small. Big. 如申請專利範圍第2或3項之基板處理裝置，其中， 設置控制部，以取得關於該基板之翹曲的資訊，依據取得之關於翹曲的資訊而調整該高度限制部之吸引壓力或對該基板供給的流體之流量的方式，輸出控制訊號。For example, the substrate processing device of the scope of patent application No. 2 or 3, in which a control section is provided to obtain the information about the warpage of the substrate, and the suction pressure of the height-limiting section is adjusted or the A control signal is output as a method of the flow rate of the fluid supplied from the substrate. 如申請專利範圍第1至3項中任一項之基板處理裝置，其中， 在將該基板保持於該第1保持部時，以使該公轉軸與該基板之中心重疊的方式進行該滑動構件之公轉。The substrate processing apparatus according to any one of claims 1 to 3, wherein when the substrate is held in the first holding portion, the sliding member is performed so that the revolution axis and the center of the substrate overlap. The revolution. 如申請專利範圍第1至3項中任一項之基板處理裝置，其中， 在將該基板保持於第2保持部時， 基板的轉速及滑動構件之公轉的轉速中之將較大的轉速除以較小的轉速之值，為整數以外之值。For example, when the substrate processing apparatus according to any one of claims 1 to 3 is applied, when the substrate is held in the second holding portion, the larger rotation speed is divided between the rotation speed of the substrate and the rotation speed of the revolution of the sliding member. The value of the smaller rotation speed is a value other than an integer. 如申請專利範圍第1至3項中任一項之基板處理裝置，其中， 該滑動構件，係由用於將該基板的背面研磨而使其粗化之研磨構件所構成。The substrate processing apparatus according to any one of claims 1 to 3, wherein the sliding member is composed of a polishing member for polishing and roughening the back surface of the substrate. 如申請專利範圍第8項之基板處理裝置，包含： 清洗構件，為了擦過而清洗由該研磨構件粗化的區域而繞鉛直軸自轉；以及 清洗部用公轉機構，使自轉中的該清洗構件繞鉛直之公轉軸公轉； 在將該基板保持於該第1保持部時該清洗構件擦過該基板之中央部，在將該基板保持於該第2保持部時該清洗構件擦過旋轉的該基板之邊緣部。For example, the substrate processing device of the patent application No. 8 includes: a cleaning member, which cleans the area roughened by the grinding member and rotates about a vertical axis in order to wipe it; and a cleaning mechanism uses a revolution mechanism to rotate the cleaning member during rotation. The vertical revolving axis revolves; when the substrate is held in the first holding portion, the cleaning member rubs over the central portion of the substrate, and when the substrate is held in the second holding portion, the cleaning member rubs over the edge of the rotating substrate unit. 如申請專利範圍第1項之基板處理裝置，更包含： 推壓機構，在該滑動構件於該基板滑動時，為了抑制該基板之變形，而從該基板的表面側往背面側推壓該基板。For example, the substrate processing apparatus of the scope of application for a patent further includes: a pressing mechanism that, when the sliding member slides on the substrate, in order to suppress the deformation of the substrate, presses the substrate from the surface side to the back side of the substrate . 如申請專利範圍第10項之基板處理裝置，其中， 該推壓機構，包含： 推壓構件，具備推壓面，其係用於夾著該基板與該滑動構件相對向而推壓該基板；以及 升降機構，使該推壓構件升降。For example, the substrate processing apparatus of claim 10, wherein the pressing mechanism includes: a pressing member having a pressing surface for pressing the substrate to face the sliding member while facing the sliding member; And an elevating mechanism for elevating the pressing member. 如申請專利範圍第11項之基板處理裝置，其中， 於該推壓面，設置供給清洗該基板之清洗液的清洗液供給口； 該推壓面，推壓經供給該清洗液之該基板的表面。For example, the substrate processing device of the scope of application for patent No. 11 wherein a cleaning liquid supply port for supplying a cleaning liquid for cleaning the substrate is provided on the pressing surface; the pressing surface is configured to press the substrate through which the cleaning liquid is supplied. surface. 如申請專利範圍第11或12項之基板處理裝置，其中， 該推壓機構，包含： 橫向移動機構，其用於在該滑動構件之公轉軌道於該基板的中心部側與邊緣部側之間移動時，使該推壓構件於該基板的中心部側與邊緣部側之間移動，維持該滑動構件與該推壓構件夾著該基板相對向的狀態。For example, the substrate processing device of claim 11 or 12, wherein the pushing mechanism includes: a lateral movement mechanism for revolving the orbit of the sliding member between the center portion side and the edge portion side of the substrate When moving, the pressing member is moved between the center portion side and the edge portion side of the substrate, and the state in which the sliding member and the pressing member face each other with the substrate sandwiched therebetween is maintained. 如申請專利範圍第11或12項之基板處理裝置，其中， 該推壓面係由具有彈性之多孔質體構成。For example, the substrate processing apparatus according to claim 11 or 12, wherein the pressing surface is composed of a porous body having elasticity. 如申請專利範圍第14項之基板處理裝置，其中， 設置於該推壓面之該清洗液噴吐口，係該多孔質體的孔部； 設置該橫向移動機構； 為了清洗該基板的側面，該橫向移動機構，使處於推壓該基板之狀態的該推壓構件移動，俾以使該推壓面之一部分位於該基板的外側。For example, the substrate processing device of the scope of application for patent No. 14, wherein the cleaning liquid discharge port provided on the pressing surface is a hole portion of the porous body; the lateral movement mechanism is provided; in order to clean the side surface of the substrate, the The lateral moving mechanism moves the pressing member in a state of pressing the substrate, so that a part of the pressing surface is located outside the substrate. 如申請專利範圍第11或12項之基板處理裝置，其中， 該推壓面呈圓形，該推壓面的徑為10mm～100mm。For example, the substrate processing apparatus of the scope of application for patent No. 11 or 12, wherein the pressing surface is circular, and the diameter of the pressing surface is 10 mm to 100 mm. 一種基板處理方法，包含如下步驟： 藉由第1保持部，水平地保持基板的背面之不與中央部重疊的區域； 藉由第2保持部，水平地保持該基板的背面之中央部，使其繞鉛直軸旋轉； 使得用於在該基板的背面滑動而進行處理之滑動構件繞鉛直軸自轉； 藉由公轉機構，使自轉中之該滑動構件，以具有較該滑動構件的直徑更小之公轉半徑的方式，繞鉛直之公轉軸公轉； 藉由相對移動機構，使該基板與該滑動構件之公轉軌道的相對位置在水平方向移動； 在將該基板保持於該第1保持部時，使自轉之該滑動構件以在該基板的背面之中央部滑動的方式公轉；以及 在將該基板保持於該第2保持部時，使該滑動構件以在該基板的背面之邊緣部滑動的方式公轉。A substrate processing method includes the following steps: a first holding portion horizontally holds an area of a back surface of a substrate that does not overlap with a central portion; a second holding portion horizontally holds a central portion of the back surface of the substrate so that It rotates around a vertical axis; causes a sliding member for processing on the back surface of the substrate to rotate around the vertical axis; by a revolution mechanism, the sliding member in rotation has a diameter smaller than that of the sliding member The method of revolution radius is to revolve around a vertical revolution axis. The relative position of the substrate and the orbit of the orbit of the sliding member is moved in a horizontal direction by a relative movement mechanism. When the substrate is held in the first holding portion, the The self-rotating sliding member revolves so as to slide on the central portion of the rear surface of the substrate; and when holding the substrate on the second holding portion, orbits the sliding member so as to slide on the edge portion of the rear surface of the substrate . 一種記錄媒體，儲存有使用在使滑動構件在基板的背面滑動而進行處理之基板處理裝置的程式，該程式係為了實行如申請專利範圍第17項之基板處理方法的各步驟的程式。A recording medium stores a program for a substrate processing apparatus that performs processing by sliding a sliding member on the back surface of a substrate. The program is a program for implementing each step of the substrate processing method as described in claim 17 of the scope of patent application.
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