TW201824685A - Photo-electric switch system and method - Google Patents

Abstract

A device for the switching of electrical current comprising a photo-cathode, an anode, one or more light sources positioned to illuminate the photo-cathode to stimulate the emission of electrons from the photo-cathode, an electrical circuit connected to and supplying a voltage across the photo-electric cathode and the anode, and a vacuum chamber enclosing at least the photo-cathode and the anode in a vacuum and holding the photo-cathode and the anode in position such that a gap exists between them.

Description

光電開關系統及方法  Photoelectric switch system and method  

由於地球大部分地方已現代化且由於人口增長，因此對電力之需求持續增加。對來自可再生能源之電力的需求對應地增加。伴隨對更多電力之需求，對在長距離上傳輸彼電力之需要增加，此係因為發電設施繼續更遠離其必須供電之負載中心而建置。 As most of the Earth has been modernized and due to population growth, the demand for electricity continues to increase. The demand for electricity from renewable sources has correspondingly increased. With the demand for more power, the need to transmit this power over long distances has increased because power generation facilities continue to move farther away from the load centers that they must supply.

傳統地，已在交流電(AC)傳輸線上執行高壓之傳輸。儘管由托馬斯愛迪生(Thomas Edison)開發之第一傳輸系統係直流電(DC)系統，但該等系統不能在系統中不遭受經由損失之顯著電壓降的情況下在大於1千米或2千米上傳輸電力。此等損失由以下等式預測：P=I²R Traditionally, high voltage transmission has been performed on an alternating current (AC) transmission line. Although the first transmission system developed by Thomas Edison is a direct current (DC) system, these systems cannot be subjected to greater than 1 km or 2 km in the system without suffering significant voltage drops through loss. Transfer power. These losses are predicted by the following equation: P = I ² R

其中P為功率(或在此狀況下，損失之功率量)，I為流經傳輸電路之電流，且R為傳輸電路之電阻。自此等式可看出，減小電流I之值將引起損失之功率P的對應減小。降低電路中之電流的一種方法係增加電壓，如由下式所展示：P=VI Where P is the power (or the amount of power lost in this condition), I is the current flowing through the transmission circuit, and R is the resistance of the transmission circuit. As can be seen from this equation, reducing the value of current I will result in a corresponding decrease in the power P of the loss. One way to reduce the current in a circuit is to increase the voltage, as shown by: P = VI

其中V為傳輸電路中之電壓或電位差。藉由增加電壓V，對於相同功率P，所得電流I必須下降。因此，使傳輸電壓升高顯著地有助於減小傳輸中損失之功率。不幸地，在愛迪生時代，不存在改變DC系統中之電壓位準的便利方式，且因此AC傳輸系統變成規範。然而，在高壓AC傳輸線上之傳輸具有限制，尤其在與在高壓DC傳輸線上之傳輸比較時。此等限制包括所需要之較高數目個導體、跨國傳輸線之較大「佔據面積」、在該等線之長度上的較大功率損失、較高操作及維護成本，及使AC產生器同步之顯著困難連同其他限制。 Where V is the voltage or potential difference in the transmission circuit. By increasing the voltage V, the resulting current I must drop for the same power P. Therefore, increasing the transmission voltage significantly contributes to reducing the power lost in transmission. Unfortunately, in the Edison era, there was no convenient way to change the voltage level in a DC system, and thus the AC transmission system became a specification. However, transmission over high voltage AC transmission lines has limitations, especially when compared to transmissions on high voltage DC transmission lines. These limitations include the higher number of conductors required, the larger "occupied area" of the transnational transmission lines, the greater power loss over the length of the lines, higher operating and maintenance costs, and the synchronization of the AC generators. Significant difficulties along with other limitations.

允許高功率AC電壓轉換成高功率DC電壓之高功率切換的開發實現對在歷史上不切實際或不可能的高壓DC傳輸系統之使用。高功率切換已由使用諸如汞弧整流器之氣體電漿以及諸如閘流體及電晶體之半導體的裝置主導，但此等裝置各自具有獨特缺點。 The development of high power switching that allows the conversion of high power AC voltages into high power DC voltages enables the use of high voltage DC transmission systems that have historically been impractical or impossible. High power switching has been dominated by devices that use gas plasmas such as mercury arc rectifiers and semiconductors such as thyristors and transistors, but each has unique disadvantages.

電漿裝置需要特殊控制電路、高效冷卻方法及謹慎的操作以避免內部條件(如導體中之突然或不均勻的幾何結構)或外部電壓型樣，其可在錯誤時間起始電弧。另外，一旦起始電弧，便無法斷開裝置直至電壓足夠低使得電弧不可再持續。電弧經由大的最小電壓降而消耗大量功率，其限制效率。電弧亦相對緩慢地開始。出於此等原因，電漿放電裝置已大部分被諸如高功率半導體之現代切換設備替換位。 Plasma devices require special control circuitry, efficient cooling methods, and careful operation to avoid internal conditions (such as sudden or uneven geometries in the conductor) or external voltage patterns that can initiate an arc at the wrong time. In addition, once the arc is initiated, the device cannot be disconnected until the voltage is low enough that the arc is no longer sustainable. The arc consumes a large amount of power via a large minimum voltage drop, which limits efficiency. The arc also begins relatively slowly. For these reasons, plasma discharge devices have been largely replaced by modern switching devices such as high power semiconductors.

諸如絕緣閘極雙極性電晶體(Insulated Gate Bipolar Transistor；IGBT)之半導體在高達幾千伏特下工作。 其快速地接通但緩慢地切斷，且必須受到保護以免受過電流或引起係斷開故障之「鎖定」的其他條件。由於其工作電壓遠低於現代傳輸線之工作電壓，因此多個裝置常常必須級聯以控制實際電壓。此級聯可使電壓降倍增且限制總體效率。避免鎖定過載及緩慢斷開之需要添加設計複雜度。此等複雜度可添加半導體高壓電力開關之成本、大小、低效率及操作限制。 Semiconductors such as Insulated Gate Bipolar Transistors (IGBTs) operate at up to several thousand volts. It is quickly turned on but slowly cut off, and must be protected from overcurrent or other conditions that cause a "lock" of the disconnection fault. Since their operating voltage is much lower than the operating voltage of modern transmission lines, multiple devices often have to be cascaded to control the actual voltage. This cascading doubles the voltage drop and limits overall efficiency. Avoiding overload and slow disconnects adds design complexity. These complexities add cost, size, inefficiency, and operational limitations to semiconductor high voltage power switches.

具有熱離子陰極之真空管(例如，經典的真空三極管)在高功率切換應用中從未獲得立足之地，此係因為足夠寬以供應高電流所需之電流的熱離子陰極將難以加熱且因為此加熱引起之功率損失而為低效的。另外，即使加熱器切斷，陰極仍可長時間保持為熱的，此可阻止陰極在足夠高以使電弧持續之電壓下快速地切斷。在電子供應仍為熱的時嘗試用柵控制此等電壓將常常導致柵被燒毀。此等缺陷實際上阻止熱離子真空管用於高功率轉換設備中。 Vacuum tubes with armionic cathodes (eg, classic vacuum triodes) have never gained a foothold in high power switching applications because thermionic cathodes that are wide enough to supply the current required for high currents will be difficult to heat and because of this The power loss caused by heating is inefficient. In addition, the cathode can remain hot for a long time even if the heater is turned off, which prevents the cathode from being rapidly cut at a voltage high enough to sustain the arc. Attempting to control these voltages with a gate while the electronics supply is still hot will often result in the gate being burned. These defects actually prevent thermionic vacuum tubes from being used in high power conversion equipment.

高功率、高壓切換之先前方法具有顯著缺陷及低效率。隨著能夠在增加距離上傳輸電力之智慧型電網的重要性增加，需要克服習知高功率切換系統之前述障礙及不足的改良之高壓整流系統及方法。 Previous methods of high power, high voltage switching have significant drawbacks and inefficiencies. As the importance of smart grids capable of transmitting power over increased distances increases, there is a need for improved high voltage rectification systems and methods that overcome the aforementioned obstacles and deficiencies of conventional high power switching systems.

105‧‧‧發電源 105‧‧‧Power supply

110‧‧‧AC傳輸線 110‧‧‧AC transmission line

115‧‧‧AC至DC換流站 115‧‧‧AC to DC converter station

117‧‧‧開關電路/整流電路 117‧‧‧Switching Circuit / Rectifier Circuit

119‧‧‧子電路 119‧‧‧Subcircuit

120‧‧‧DC傳輸線 120‧‧‧DC transmission line

125‧‧‧DC至AC換流站 125‧‧‧DC to AC converter station

130‧‧‧分配線 130‧‧‧ distribution line

135‧‧‧AC產生器 135‧‧‧AC generator

140‧‧‧電感器 140‧‧‧Inductors

140A‧‧‧電感器 140A‧‧‧Inductors

140B‧‧‧電感器 140B‧‧‧Inductors

140C‧‧‧電感器 140C‧‧‧Inductors

142‧‧‧電感器 142‧‧‧Inductors

145‧‧‧開關元件或閥 145‧‧‧Switching elements or valves

145A‧‧‧閥 145A‧‧‧Valve

145B‧‧‧閥 145B‧‧‧ valve

145C‧‧‧閥 145C‧‧‧ valve

145D‧‧‧閥 145D‧‧‧ valve

145E‧‧‧閥 145E‧‧‧ valve

145F‧‧‧閥 145F‧‧‧ valve

147‧‧‧閥子模組 147‧‧‧ valve module

148‧‧‧開關電路 148‧‧‧Switch circuit

148C‧‧‧儲存電容器 148C‧‧‧Storage capacitor

148S‧‧‧開關 148S‧‧ switch

150‧‧‧端子 150‧‧‧ terminals

152‧‧‧輸出端子 152‧‧‧Output terminal

200‧‧‧受控光電開關 200‧‧‧Controlled photoelectric switch

200A‧‧‧受控光電開關 200A‧‧‧controlled photoelectric switch

200B‧‧‧受控光電開關 200B‧‧‧controlled photoelectric switch

200C‧‧‧受控光電開關 200C‧‧‧ controlled photoelectric switch

200D‧‧‧受控光電開關 200D‧‧‧controlled photoelectric switch

200E‧‧‧受控光電開關 200E‧‧‧ controlled photoelectric switch

200F‧‧‧受控光電開關 200F‧‧‧ controlled photoelectric switch

200G‧‧‧受控光電開關 200G‧‧‧controlled photoelectric switch

205‧‧‧光陰極 205‧‧‧Photocathode

210‧‧‧導電陽極 210‧‧‧Electrical anode

215‧‧‧輸入電導體 215‧‧‧Input electrical conductor

220‧‧‧光源 220‧‧‧Light source

225‧‧‧真空/真空間隙 225‧‧‧vacuum/vacuum gap

230‧‧‧絕緣材料套環 230‧‧‧Insulation material collar

235‧‧‧真空腔室 235‧‧‧vacuum chamber

240‧‧‧輸出電導體 240‧‧‧Output electrical conductor

345‧‧‧反射表面/反射元件 345‧‧‧Reflective surface/reflective element

405‧‧‧控制環 405‧‧‧Control loop

410‧‧‧冷卻架構 410‧‧‧ Cooling architecture

505‧‧‧控制柵 505‧‧‧Control grid

705‧‧‧內部遮蔽物 705‧‧‧Interior shelter

710‧‧‧內部遮蔽物 710‧‧‧Interior shelter

圖1A為說明可使用受控光電開關之實施例的高功率傳輸 系統之實施例的例示性圖。 1A is an illustrative diagram illustrating an embodiment of a high power transmission system in which an embodiment of a controlled photoelectric switch can be used.

圖1B為說明用於將高壓AC電力轉換至高壓DC電力之電路之實施例的例示性圖。 FIG. 1B is an illustrative diagram illustrating an embodiment of a circuit for converting high voltage AC power to high voltage DC power.

圖1C為說明用於將高壓DC電力轉換至高壓AC電力之電路之實施例的例示性圖。 1C is an illustrative diagram illustrating an embodiment of a circuit for converting high voltage DC power to high voltage AC power.

圖2為說明受控光電開關之替代實施例的例示性圖。 2 is an illustrative diagram illustrating an alternate embodiment of a controlled photoelectric switch.

圖3為說明受控光電開關之替代實施例的例示性圖，其中反射表面用以將光導向至陰極上。 3 is an illustrative diagram illustrating an alternate embodiment of a controlled photoelectric switch in which a reflective surface is used to direct light onto a cathode.

圖4為說明受控光電開關之替代實施例的例示性圖，其中控制環用以促進朝向陽極之電子流動且光陰極表面在自後方照明之透明基板的前部上。 4 is an illustrative diagram illustrating an alternate embodiment of a controlled photoelectric switch in which a control loop is used to promote electron flow toward the anode and the photocathode surface is on the front of the transparent substrate that is illuminated from the rear.

圖5為說明受控光電開關之替代實施例的例示性圖，該光電開關具有替代外觀尺寸及用於控制電子流動之加速度的控制柵。 5 is an illustrative diagram illustrating an alternate embodiment of a controlled photoelectric switch having a control grid that replaces the apparent size and the acceleration used to control the flow of electrons.

圖6為說明受控光電開關之替代實施例的例示性圖，該光電開關之特徵在於附接至光陰極之用於冷卻的散熱片。 6 is an illustrative diagram illustrating an alternate embodiment of a controlled photoelectric switch characterized by a heat sink for cooling attached to a photocathode.

圖7為說明受控光電開關之替代實施例的例示性圖，該光電開關之特徵在於可保護壁免受諸如材料濺鍍之污染源的內部遮蔽物。 7 is an illustrative diagram illustrating an alternate embodiment of a controlled photoelectric switch that is characterized by an internal shield that protects the wall from sources of contamination such as material sputtering.

圖8為說明為易於製造而組態之受控光電開關之替代實施例的例示性圖。 Figure 8 is an illustrative diagram illustrating an alternate embodiment of a controlled opto-electronic switch configured for ease of manufacture.

應注意，貫穿諸圖，出於說明性目的，諸圖未必按比例繪製且具有類似結構或功能的元件通常由類似參考數字表示。亦應注意，諸圖僅意欲促進對較佳實施例之描述。 諸圖並不說明所描述實施例之每一態樣且不限制本發明之範疇。 It is to be noted that, in the claims It should also be noted that the drawings are only intended to facilitate the description of the preferred embodiments. The figures are not intended to illustrate each aspect of the described embodiments and do not limit the scope of the invention.

在以下描述中，將描述各種實施例。出於解釋之目的，闡述特定組態及細節以便提供對實施例之透徹理解。然而，熟習此項技術者亦將顯而易見，可在無該等特定細節的情況下實踐該等實施例。此外，可省略或簡化熟知特徵以免混淆所描述之實施例。 In the following description, various embodiments will be described. Specific configurations and details are set forth to provide a thorough understanding of the embodiments. However, it will be apparent to those skilled in the art that the embodiments may be practiced without the specific details. In addition, well-known features may be omitted or simplified to avoid obscuring the described embodiments.

所描述及建議之技術包括用於控制電流之流動，且特定而言，控制電流在高壓系統中之切換的方法及系統。實例實施例可用於高壓直流電(DC)電力與高壓交流電(AC)電力之間的轉換，或DC電力之不同電壓之間的轉換或不同AC電壓之間的轉換中，或可用於調整及保護高壓電力電路及設備。在高壓操作中，所描述之方法及系統可提供在效率、高頻操作以及切換速度及效能上之優點。 The techniques described and suggested include methods and systems for controlling the flow of current and, in particular, controlling the switching of current in a high voltage system. Example embodiments may be used for conversion between high voltage direct current (DC) power and high voltage alternating current (AC) power, or conversion between different voltages of DC power or conversion between different AC voltages, or may be used to adjust and protect high voltage Power circuits and equipment. In high voltage operation, the described methods and systems provide advantages in efficiency, high frequency operation, and switching speed and performance.

出於本說明書之目的，術語「高壓」應通常定義為具有足夠高以對活生物體施以傷害之電能的電壓。更實際地，國際電工委員會(IEC)將「高壓」定義為對於交流電而言高於1000伏特且對於直流電而言高於1500伏特之任何電壓。在電力傳輸中，「高功率」通常被視為超過35,000伏特之任何電壓。 For the purposes of this specification, the term "high pressure" shall generally be defined as a voltage that is sufficiently high to apply electrical energy to a living organism. More practically, the International Electrotechnical Commission (IEC) defines "high voltage" as any voltage greater than 1000 volts for alternating current and greater than 1500 volts for direct current. In power transmission, "high power" is generally considered to be any voltage exceeding 35,000 volts.

各種實例實施例係有關於一種開關，其可為用於藉由允許電流僅在一個方向上流經而將交流電轉換成直流電之電裝置。在一些實施例中，開關提供在密封的真空管中分 離某距離之兩個電極：光陰極及陽極。光陰極可為帶負電電極，其在由光源照明時歸因於光電效應或光發射而發射電子。在光發射中，來自撞擊光陰極之表面之光子的能量可由光陰極之材料內的電子獲取，從而使電子射出。當照明光陰極時，可發射電子，其穿過真空管之內部流動至帶正電陽極，從而在兩個電極之間產生電流流動。在一些實施例中，電子僅源自光陰極，因此開關可因自光陰極流動至陽極之電子而經偏振。 Various example embodiments are directed to a switch that can be an electrical device for converting alternating current to direct current by allowing current to flow in only one direction. In some embodiments, the switch provides two electrodes that are separated by a distance in a sealed vacuum tube: a photocathode and an anode. The photocathode can be a negatively charged electrode that emits electrons due to photoelectric effect or light emission when illuminated by a light source. In light emission, energy from photons striking the surface of the photocathode can be taken from electrons within the material of the photocathode, thereby ejecting electrons. When the photocathode is illuminated, electrons can be emitted which flow through the interior of the vacuum tube to the positively charged anode, thereby creating a current flow between the two electrodes. In some embodiments, the electrons are only derived from the photocathode, so the switch can be polarized by electrons flowing from the photocathode to the anode.

應注意，術語「開關」不應被解釋為以任何方式進行限制，且本發明之實施例可用於超出交流電與直流電之間的轉換範圍的其他合適應用中。各種實施例可用於需要電流切換之任何合適應用中，且一些較佳實施例可經組態以用於高功率電流切換應用。如本文中所描述，各種實施例亦可良好地適合於功率之調節。 It should be noted that the term "switch" should not be construed as limiting in any way, and embodiments of the invention may be used in other suitable applications that exceed the range of conversion between alternating current and direct current. Various embodiments may be used in any suitable application requiring current switching, and some preferred embodiments may be configured for high power current switching applications. As described herein, various embodiments may also be well suited for power regulation.

現轉向諸圖，將更詳細地描述光電開關之各種實施例。圖1A為說明可使用光電開關之實施例的高功率傳輸系統之實施例的例示性圖。該圖展示用於自電力源(例如，發電廠或可再生能量源)至分配線之電力的實例傳輸路徑，該等分配線將電力遞送至終端客戶(例如，企業及家庭)。 Turning now to the drawings, various embodiments of photoelectric switches will be described in greater detail. 1A is an illustrative diagram illustrating an embodiment of a high power transmission system in which an embodiment of a photoelectric switch can be used. The figure shows an example transmission path for power from a power source (eg, a power plant or a renewable energy source) to a distribution line that delivers power to end customers (eg, businesses and homes).

可在發電源105處產生高壓交流電(HVAC)電力。發電源105可為發電廠(例如，水力發電大壩、化石燃料發電站、核電廠、風力發電廠或其類似者)。在發電源105處產生之HVAC電力可直接附接或經由AC傳輸線110攜載至AC至DC換流站115(亦被稱作整流站)。AC至DC換流站115 接著將HVAC電力轉換至高壓直流電(HVDC)電力，該HVDC電力可接著經由DC傳輸線120傳輸長距離。使用HVDC之電力傳輸可具有優於使用如本文中先前所論述之HVAC之傳輸的優點，此等優點包括需要較少傳輸塔、較小較便宜傳輸塔及較小環境影響(較小「佔據面積」)。 High voltage alternating current (HVAC) power can be generated at the power source 105. The power source 105 can be a power plant (eg, a hydroelectric dam, a fossil fuel power plant, a nuclear power plant, a wind power plant, or the like). The HVAC power generated at the power source 105 can be directly attached or carried via the AC transmission line 110 to an AC to DC converter station 115 (also referred to as a rectifier station). The AC to DC converter station 115 then converts the HVAC power to high voltage direct current (HVDC) power, which may then be transmitted over a long distance via the DC transmission line 120. Power transmission using HVDC may have advantages over transmission using HVAC as previously discussed herein, including the need for fewer transmission towers, smaller, less expensive transmission towers, and less environmental impact (smaller "occupied area" ").

DC傳輸線120將HVDC電力遞送至DC至AC換流站125(亦被稱作反轉站)，在該換流站處將HVDC電力轉換回成HVAC電力。可接著經由另一組AC傳輸線110攜載HVAC電力且將其遞送至分配線130，在分配線處，使用變壓器將電力下降為適合於終端客戶(企業、家庭等)之電壓位準。 The DC transmission line 120 delivers HVDC power to a DC to AC converter station 125 (also referred to as a reverse station) where the HVDC power is converted back to HVAC power. The HVAC power can then be carried via another set of AC transmission lines 110 and delivered to distribution line 130 where the transformer is used to reduce the power to a voltage level suitable for the end customer (enterprise, home, etc.).

出於本說明書之目的，AC至DC換流站115及DC至AC換流站125以及自AC電力之一個位準轉換至AC電力之另一位準或自DC電力之一個位準轉換至DC電力之另一位準的換流站將被統稱為「電力換流站」。然而，術語「站」不應被解釋為以任何方式進行限制，且並不意圖暗示或需要特定建築結構或實施例。如本文中所使用，「電力換流站」應與術語「電力轉換電路」同義且可互換。 For the purposes of this specification, AC to DC converter station 115 and DC to AC converter station 125 and one level from AC power are converted to another level of AC power or from one level of DC power to DC. Another quasi-conversion station for electricity will be collectively referred to as a "electric converter station." However, the term "station" is not to be construed as limiting in any way, and is not intended to imply or require a particular architectural structure or embodiment. As used herein, "electric converter station" shall be synonymous and interchangeable with the term "power conversion circuit."

本文中將詳細描述之高壓開關可為圖1A之AC至DC換流站115及/或DC至AC換流站125之組件。高壓開關充當允許電流在一個方向上流經之電開關，且此屬性允許開關用於自HVAC轉換至HVDC及再轉換回所需之整流及反轉程序中。此情形最佳藉由諸如圖1B及圖1C中所展示之彼等實例的實例說明。 The high voltage switch, which will be described in detail herein, may be a component of the AC to DC converter station 115 and/or the DC to AC converter station 125 of FIG. 1A. The high voltage switch acts as an electrical switch that allows current to flow in one direction, and this property allows the switch to be used to switch from HVAC to HVDC and back to the desired rectification and reversal procedures. This situation is best illustrated by examples of such examples as shown in Figures IB and 1C.

(應注意，儘管典型的開關允許電流僅在一個方 向上流經，但將有可能建構使用本文中所描述之將允許電流在兩個方向上通過(如應用需要所規定)之原理的開關。) (It should be noted that although a typical switch allows current to flow in only one direction, it will be possible to construct a switch that uses the principles described herein that will allow current to pass in both directions (as specified by the application).

現轉向圖1B，可見圖1A之高壓AC至DC換流站115之實例實施例。應注意，圖1B中所展示之實施例為僅用於教示目的且並不意圖以任何方式進行限制之實例。 Turning now to Figure 1B, an example embodiment of the high voltage AC to DC converter station 115 of Figure 1A can be seen. It should be noted that the embodiment shown in FIG. 1B is an example for teaching purposes only and is not intended to be limiting in any way.

例示性AC至DC換流站115可實施如圖1B中所展示之電力轉換電路。此電力轉換電路接入三個相位，其中每一相位具有AC產生器135及電感器140。產生器135之每一相位在電感器140上輸出AC電壓信號，其為正弦波，其中所產生之電壓自0伏特連續地改變直至最大正電壓，接著減小回至0伏特，在此處，電壓變為負，接著電壓改變為降至最大負電壓且接著再次返回至0伏特。 The exemplary AC to DC converter station 115 can implement a power conversion circuit as shown in FIG. 1B. This power conversion circuit is connected to three phases, each of which has an AC generator 135 and an inductor 140. Each phase of the generator 135 outputs an AC voltage signal on the inductor 140, which is a sine wave, wherein the generated voltage continuously changes from 0 volts up to the maximum positive voltage, and then decreases back to 0 volts, where The voltage becomes negative, then the voltage changes to fall to the maximum negative voltage and then returns to 0 volts again.

在電感器140A、140B及140C上所見之AC相位電壓連接至包含(在此實例中)六個開關元件或閥145之開關電路117。此等閥145允許電流僅在一個方向上流動，如由每一閥145上所展示之三角形之方向指示。在正常操作中，六個閥145中之僅兩者(一者來自頂部列(值145A、145B及145C)且一者來自底部列(145D、145E及145F))在任何時間係導電的(允許電流通過)。以此方式，兩個導電閥145將在電感器140處所見之三個AC相位電壓中之兩者串聯連接。舉例而言，若閥145A及145F導電，則在端子150上所見之DC輸出電壓將計算為電感器140A上之電壓減去電感器140C上之電壓。圖1B之實例中所展示的閥之組合可用於將三相HVAC轉換成HVDC。 The AC phase voltages seen on inductors 140A, 140B, and 140C are connected to a switching circuit 117 that includes (in this example) six switching elements or valves 145. These valves 145 allow current to flow in only one direction, as indicated by the direction of the triangle shown on each valve 145. In normal operation, only two of the six valves 145 (one from the top column (values 145A, 145B, and 145C) and one from the bottom column (145D, 145E, and 145F) are electrically conductive at any time (allowed) Current is passed). In this manner, the two conductive valves 145 connect the two of the three AC phase voltages seen at the inductor 140 in series. For example, if valves 145A and 145F are conducting, the DC output voltage seen at terminal 150 will be calculated as the voltage across inductor 140A minus the voltage across inductor 140C. The combination of valves shown in the example of Figure IB can be used to convert three phase HVAC to HVDC.

現轉向圖1C，可見圖1A之高壓DC至AC換流站125之實例實施例。應注意，圖1C中所展示之實施例為僅用於教示目的且並不意圖以任何方式進行限制之實例。 Turning now to Figure 1C, an example embodiment of the high voltage DC to AC converter station 125 of Figure 1A can be seen. It should be noted that the embodiment shown in FIG. 1C is an example for teaching purposes only and is not intended to be limiting in any way.

例示性DC至AC換流站125可實施如圖1C中所展示之電力轉換電路。所展示之電力轉換電路為模組化多位準轉換器(MMC)之實例。在一些實施例中，MMC電力轉換電路使用數個閥子模組147及電感器142(諸如，展示於子電路119中)以將在端子150處所見之DC電力轉換成在相位135下之三相AC電力。每一閥子模組147充當能夠產生各種位準之電壓的可控制電壓源。每一閥子模組147藉由實施展示於在圖1C之左下方所展示的閥147之近視圖中的開關電路148進行此操作。每一開關電路148可由數個電容器148C組成。每一電容器148C藉由開關148S旁路或連接至開關電路148中。開關148S之一個可能實施使用本文中所描述之高壓光電開關之一或多個實施例。 The exemplary DC to AC converter station 125 can implement a power conversion circuit as shown in Figure 1C. The power conversion circuit shown is an example of a modular multi-level converter (MMC). In some embodiments, the MMC power conversion circuit uses a plurality of valve sub-modules 147 and inductors 142 (such as shown in sub-circuit 119) to convert the DC power seen at terminal 150 to three under phase 135. Phase AC power. Each valve sub-module 147 acts as a controllable voltage source capable of generating various levels of voltage. Each valve sub-module 147 performs this operation by implementing a switch circuit 148 shown in a close-up view of the valve 147 shown at the lower left of FIG. 1C. Each switch circuit 148 can be comprised of a plurality of capacitors 148C. Each capacitor 148C is bypassed or connected to switch circuit 148 by switch 148S. One of the switches 148S may implement one or more embodiments using the high voltage optoelectronic switches described herein.

藉由控制開關148S之時序及狀態，儲存電容器148C之各種組合可包括於開關電路148中，從而在輸出端子152上產生變化位準之電壓。此等變化位準之電壓可用以產生接近AC信號之正弦波的階梯式電壓波形。 By controlling the timing and state of switch 148S, various combinations of storage capacitors 148C can be included in switching circuit 148 to produce a varying level of voltage across output terminal 152. These varying levels of voltage can be used to generate a stepped voltage waveform that is close to the sine wave of the AC signal.

圖1B之閥145可為單向開關，其中之每一者可允許電流在該等閥經嚙合時所指示之方向上流經。此等閥145之一個可能實施為本文中所描述之高壓光電開關之一或多個實施例。類似地，本文中所描述之高壓光電開關之一或多個實施例可用以實施圖1C之開關電路148。現將在剩餘諸圖中 描述高壓光電開關之各種實施例。 The valve 145 of Figure IB can be a one-way switch, each of which can allow current to flow in the direction indicated by the valves when engaged. One of these valves 145 may be implemented as one or more embodiments of the high voltage optoelectronic switches described herein. Similarly, one or more embodiments of the high voltage optoelectronic switches described herein can be used to implement the switching circuit 148 of FIG. 1C. Various embodiments of high voltage photoelectric switches will now be described in the remaining figures.

圖2為說明受控光電開關200之一個實施例的例示性圖。應注意，貫穿本說明書將使用參考指定符200來概括地提及光電開關，且如圖2至圖8中所展示之光電開關的各種實施例將各自具有被添加至該參考指定符以將其與其他實施例區分之字母。舉例而言，圖2中所展示之光電開關200之實施例將替代地被稱作200A，且圖3中所展示之開關200之實施例將替代地被稱作200B。亦應注意，光電開關200可用作圖1B中之閥145之實施。 FIG. 2 is an illustrative diagram illustrating one embodiment of a controlled photoelectric switch 200. It should be noted that the reference switches 200 will be used throughout the specification to refer to the photoelectric switches in general terms, and that various embodiments of the photoelectric switches as shown in Figures 2 through 8 will each have been added to the reference designator to Letters that are distinguished from other embodiments. For example, an embodiment of the photoelectric switch 200 shown in FIG. 2 will alternatively be referred to as 200A, and an embodiment of the switch 200 shown in FIG. 3 will alternatively be referred to as 200B. It should also be noted that the photoelectric switch 200 can be implemented as the valve 145 of Figure 1B.

返回圖2，輸入電導體215連接至光陰極205。電導體215之未連接至光陰極205的末端可連接至外部電路(未圖示)，諸如圖1B中所說明之整流電路117。光陰極205可藉由真空225而與導電陽極210分離，該導電陽極又可連接至輸出電導體240，該輸出電導體連接至外部電路(未圖示)。外部電路(未圖示，但實例整流電路117展示於圖1B中)在光陰極205與陽極210之間施加電壓。光電開關200將控制電流在光陰極205與陽極210之間的流動。 Returning to Figure 2, the input electrical conductor 215 is coupled to the photocathode 205. The end of the electrical conductor 215 that is not connected to the photocathode 205 can be connected to an external circuit (not shown), such as the rectifier circuit 117 illustrated in Figure 1B. Photocathode 205 can be separated from conductive anode 210 by vacuum 225, which in turn can be coupled to output electrical conductor 240, which is coupled to an external circuit (not shown). An external circuit (not shown, but example rectifier circuit 117 is shown in FIG. 1B) applies a voltage between photocathode 205 and anode 210. Photoelectric switch 200 will control the flow of current between photocathode 205 and anode 210.

當每光子能量相當於或大於光陰極205表面之電子功函數特性時，該表面發射電子。此轉變並非準確的，此係因為一些電子將具有額外熱能或受益於表面中之局部變化，但能量遠小於標稱功函數之光子通常將不使電子釋放。 The surface emits electrons when the energy per photon is equal to or greater than the electronic work function characteristic of the surface of the photocathode 205. This transformation is not accurate because some electrons will have additional thermal energy or benefit from local variations in the surface, but photons with energy much less than the nominal work function will generally not release electrons.

光電開關200之各種實施例包括能夠發射某波長之長的光源220，在該波長下，光子能量足以刺激電子自光陰極205之發射。在一個實例實施例中，此光可藉由具有將光 引導至光陰極205之光學路徑的發光二極體(LED)提供。在另一實例實施例中，光源220可為雷射。熟習此項技術者將理解，可使用遵從如下要求之適當光子源：該波長之光包括能量大於電子光發射表面(光陰極205)之功函數的光子。在一些實例實施例中，由光源220發射之光的量可根據脈衝頻率及/或強度而調節以最佳地控制光電開關200。 Various embodiments of the photoelectric switch 200 include a light source 220 capable of emitting a length of a wavelength at which the photon energy is sufficient to stimulate the emission of electrons from the photocathode 205. In an example embodiment, this light may be provided by a light emitting diode (LED) having an optical path that directs light to photocathode 205. In another example embodiment, light source 220 can be a laser. Those skilled in the art will appreciate that a suitable photon source can be used that meets the requirements that light of this wavelength includes photons having an energy greater than the work function of the electron light emitting surface (photocathode 205). In some example embodiments, the amount of light emitted by light source 220 may be adjusted based on pulse frequency and/or intensity to optimally control photoelectric switch 200.

在一些實例實施例中，光源220可位於亦被稱作真空腔室235之真空管內部，經定位以直接照耀在光陰極205之面向陽極210的表面上，或自後方照耀穿過光陰極205(如稍後待論述之透射型光陰極之狀況中)。在其他實例實施例中，反射表面可裝設於真空腔室235中以建立用於光子之路徑，使得其以最佳效率撞擊光陰極205之表面，而不管其相對於發射光陰極205表面之位置。在另外其他實例實施例中，照明源220可位於真空腔室235外部，其中光穿過透明或半透明的真空腔室235壁而導向至真空腔室235之內部中及光陰極205 In some example embodiments, light source 220 may be located inside a vacuum tube, also referred to as vacuum chamber 235, positioned to illuminate directly on the surface of photocathode 205 that faces anode 210, or from rear through light cathode 205 ( As in the case of a transmissive photocathode to be discussed later). In other example embodiments, a reflective surface may be disposed in the vacuum chamber 235 to establish a path for the photon such that it strikes the surface of the photocathode 205 with optimal efficiency regardless of its surface relative to the surface of the emitting photocathode 205. position. In still other example embodiments, the illumination source 220 can be external to the vacuum chamber 235 with light passing through the wall of the transparent or translucent vacuum chamber 235 leading into the interior of the vacuum chamber 235 and the photocathode 205

開關200之一些實施例亦允許用在具有過低之光子能量之波長下或在錯誤波長下之光進行照明以起始光發射。此光被稱作「低效光」，且可用於包括但不限於以下各者之目的：開關200之視覺檢驗，或經由使用光電池產生用於開關200之組件之電力。 Some embodiments of the switch 200 also allow illumination with light having a wavelength of too low photon energy or at the wrong wavelength to initiate light emission. This light is referred to as "inefficient light" and can be used for purposes including, but not limited to, the visual inspection of switch 200, or the generation of power for components of switch 200 via the use of photovoltaic cells.

舉例而言，最高效且耐久之光陰極205中的一些需要紫外光以引起電子發射，且因此在人類可見光譜中之光可被視為「低效的」。低效光可存在於裝置內或大體在裝置及 周圍設備附近，而不引起自光陰極205發射電子。 For example, some of the most efficient and durable photocathodes 205 require ultraviolet light to cause electron emission, and thus light in the human visible spectrum can be considered "inefficient." Inefficient light may be present within or substantially adjacent to the device and surrounding equipment without causing electrons to be emitted from photocathode 205.

如本文中先前所描述，光源220可提供足夠短波長之光，使得光之光子能量超過引起光陰極205經由光電效應發射電子所需之能量。光源220之強度可判定可自光陰極205發射之電子之數目。若光源220經切斷，則光電效應將停止且無電子將由光陰極205發射。在一些實施例中，光電開關200可經組態使得照射光陰極205之任何環境光(諸如，照耀至光電開關200中之人類可見光)將具有與較低光子能量相關聯之波長(低效光，如先前所描述)使得將不起始光發射。 As previously described herein, light source 220 can provide light of a sufficiently short wavelength such that the photon energy of the light exceeds the energy required to cause photocathode 205 to emit electrons via the photoelectric effect. The intensity of light source 220 determines the number of electrons that can be emitted from photocathode 205. If the light source 220 is turned off, the photoelectric effect will cease and no electrons will be emitted by the photocathode 205. In some embodiments, the photoswitch 200 can be configured such that any ambient light that illuminates the photocathode 205, such as human visible light that shines into the optoelectronic switch 200, will have a wavelength associated with lower photon energy (inefficient light) As previously described) such that light emission will not be initiated.

光陰極205及陽極210係圍封於密封的真空腔室235中。真空腔室235可由耐久電絕緣材料建構，且經密封及抽真空使得其建立高品質真空225。出於本說明書之目的，術語「真空」及「高品質真空」將用以定義具有某品質之真空使得真空腔室235內不存在足以持續電弧之自由浮動原子。以此方式，當不可自光源220獲得光子時，即使光陰極205與陽極210之間的電壓差極高，真空225亦將不允許任何電流在光陰極205與陽極210之間流動。供建構真空腔室235之材料可為由良好的電絕緣體，其由將不易於衰減、蒸發或以其他方式使可染污含於光電開關200內之表面且導致不合需要之導電通路之材料脫落的材料製成。在各種實施例中，可能需要真空腔室235之內部表面在操作期間不含污染物以防止額外導電通路。 Photocathode 205 and anode 210 are enclosed in a sealed vacuum chamber 235. The vacuum chamber 235 can be constructed of a durable electrically insulating material that is sealed and evacuated such that it establishes a high quality vacuum 225. For the purposes of this specification, the terms "vacuum" and "high quality vacuum" will be used to define a vacuum of a certain quality such that there are no free floating atoms in the vacuum chamber 235 sufficient to sustain the arc. In this manner, when photons are not available from light source 220, vacuum 225 will not allow any current to flow between photocathode 205 and anode 210 even if the voltage difference between photocathode 205 and anode 210 is extremely high. The material for constructing the vacuum chamber 235 may be a good electrical insulator that is detached from materials that would not readily attenuate, evaporate, or otherwise render the stain on the surface within the optoelectronic switch 200 and cause undesirable conductive pathways. Made of materials. In various embodiments, it may be desirable for the interior surface of vacuum chamber 235 to be free of contaminants during operation to prevent additional conductive pathways.

開關中之電流可藉由落在光陰極上之光之量調節。舉例而言，在一些實施例中，當光自光陰極205移除時， 電流減小為零。來自陰極205之光發射為量子程序，在一些實施例中允許快速切換速度，包括但不限於約數十皮秒。自光轉換至電子之程序可較佳為幾乎線性的，因此一些實施例可用以調節電力以及切換電力。 The current in the switch can be adjusted by the amount of light that falls on the photocathode. For example, in some embodiments, when light is removed from photocathode 205, the current is reduced to zero. Light emission from cathode 205 is a quantum program that, in some embodiments, allows for fast switching speeds including, but not limited to, on the order of tens of picoseconds. The process of switching from light to electrons may preferably be nearly linear, so some embodiments may be used to regulate power and switch power.

一些光陰極205材料可准許建構寬的光陰極205表面，其在一些實施例中在給定足夠照明時供應數百安培之電流。在一些實施例中，光陰極205與陽極210可分離某距離，允許電壓被真空間隙225阻斷。舉例而言，在一些較佳實施例中，分離光陰極205與陽極210之距離可為約數公分，包括1cm、5cm、10cm、50cm或其類似者。在其他較佳實施例中，被真空間隙阻斷之電壓可為約數十萬伏特，包括10,000伏特、50,000伏特、150,000伏特或其類似者。此可使一些實施例有可能藉由單一開關裝置200切換數百萬瓦特之電力。在一些實施例中，用於裝置之電力上限係由自開關200移除熱之能力及由外部電負載可反抗快速切換而產生之電壓來設定。儘管本文中所描述之一些實施例可包括分離光陰極205與陽極210之約為數公分的距離，但其他實施例可包括約為數毫米、數分米、數公尺或其類似者之此距離。另外，儘管一些實施例係關於被真空間隙阻斷之電壓可為約數十萬伏特，但其他實施例之被阻斷電壓可包括100伏特、500伏特、1,000伏特、5,000伏特或其類似者。 Some photocathode 205 materials may permit the construction of a wide photocathode 205 surface that, in some embodiments, supplies hundreds of amps of current when given sufficient illumination. In some embodiments, photocathode 205 can be separated from anode 210 by a distance that allows voltage to be blocked by vacuum gap 225. For example, in some preferred embodiments, the distance separating the photocathode 205 from the anode 210 can be on the order of a few centimeters, including 1 cm, 5 cm, 10 cm, 50 cm, or the like. In other preferred embodiments, the voltage blocked by the vacuum gap can be on the order of hundreds of thousands of volts, including 10,000 volts, 50,000 volts, 150,000 volts, or the like. This may enable some embodiments to switch millions of watts of power by a single switching device 200. In some embodiments, the upper limit of power for the device is set by the ability to remove heat from the switch 200 and the voltage generated by the external electrical load against the fast switching. While some embodiments described herein may include separating the photocathode 205 from the anode 210 by a distance of a few centimeters, other embodiments may include such distances of the order of a few millimeters, a few decimeters, a few meters, or the like. Additionally, while some embodiments may have a voltage that is blocked by the vacuum gap of about several hundred thousand volts, the blocked voltage of other embodiments may include 100 volts, 500 volts, 1,000 volts, 5,000 volts, or the like.

光陰極205可包含各種合適的材料。舉例而言，在一些實施例中，光陰極205可由能夠進行光發射之材料建構，該材料包括但不限於S1(Ag-O-Cs)、銻銫(Sb-Cs)、雙鹼 (Sb-Rb-Cs/Sb-K-Cs)、高溫或低雜訊雙鹼(Na-K-Sb)、多鹼(Na-K-Sb-Cs)、砷化鎵(GaAs)、砷化銦鎵(InGaAs)、碲化銫(Cs-Te)、碘化銫(Cs-I)及氮化鎵(Ga-N)或其類似者。 Photocathode 205 can comprise a variety of suitable materials. For example, in some embodiments, photocathode 205 can be constructed from materials capable of light emission, including but not limited to S1 (Ag-O-Cs), bismuth (Sb-Cs), and dibasic (Sb- Rb-Cs/Sb-K-Cs), high temperature or low noise double base (Na-K-Sb), polybasic (Na-K-Sb-Cs), gallium arsenide (GaAs), indium gallium arsenide ( InGaAs), Cs-Te, Cs-I, and Ga-N or the like.

在一個實例實施例中，由氮化鎵材料與銫跡線層建構之光陰極可結合具有短於357nm之波長(大於3.5eV光子能量)的紫外光(光子)來使用。 In an example embodiment, a photocathode constructed from a gallium nitride material and a germanium trace layer can be used in combination with ultraviolet light (photons) having a wavelength shorter than 357 nm (greater than 3.5 eV photon energy).

可基於光陰極205之所要效能特性而選擇光陰極205材料，該等特性包括但不限於所要光譜回應、熱電及機械屬性及光陰極205為透射型抑或反射型。存在許多不同的光陰極205材料且其可適合用於各種實施例之光陰極205中。此等材料中之一些最佳地適用於前方照明，而其他材料最佳地用於後方照明。 Photocathode 205 material may be selected based on the desired performance characteristics of photocathode 205, including but not limited to desired spectral response, thermoelectric and mechanical properties, and photocathode 205 being transmissive or reflective. There are many different photocathode 205 materials and it can be suitable for use in the photocathode 205 of various embodiments. Some of these materials are best suited for front lighting, while others are best used for rear lighting.

光陰極205可包括透射及反射式光陰極205。透射型光陰極205可由如下光陰極205定義：其中光照射光陰極205之一個表面或側面及電子自對置表面或側面出射。透射型光陰極205可藉由用光發射塗層塗佈透明窗來建構，該塗層允許光穿過從而使電子在對置表面上射出，光自該對置表面照耀。通常，出於論述之目的，透射型光陰極205之正被照明之側面將被視為光陰極205之「背面」，且電子發射所自之側面(亦即，面向陽極210之側面)將被視為「正面」。 Photocathode 205 can include a transmissive and reflective photocathode 205. The transmissive photocathode 205 can be defined by a photocathode 205 in which light illuminates one surface or side of the photocathode 205 and electrons exit from the opposite surface or side. The transmissive photocathode 205 can be constructed by coating a transparent window with a light-emitting coating that allows light to pass therethrough to cause electrons to exit on the opposing surface from which the light shines. Generally, for purposes of discussion, the side of the transmissive photocathode 205 that is being illuminated will be considered the "back side" of the photocathode 205, and the side from which the electron emission is emitted (i.e., the side facing the anode 210) will be Considered as "positive."

反射型光陰極205可由如下光陰極205定義：其中光進入且電子自光陰極205之同一表面或側面出射。在一些實施例中，反射型光陰極205可形成於不透明的金屬電極基底上。關於反射型光陰極205之變化可包括雙反射類型， 其中金屬基底可類似於鏡面，使穿過光陰極205之光返反射回穿過光陰極205以再次嘗試將能量賦予至基底材料中之電子。在一些實施例中，可將相比光陰極205基底之下伏材料更易於釋放電子的專用塗層塗覆至光陰極205以增加光電效應。 The reflective photocathode 205 can be defined by a photocathode 205 in which light enters and electrons exit from the same surface or side of the photocathode 205. In some embodiments, reflective photocathode 205 can be formed on an opaque metal electrode substrate. Variations relating to the reflective photocathode 205 may include a dual reflection type in which the metal substrate may be similar to a mirror surface, such that light passing through the photocathode 205 is reflected back through the photocathode 205 to again attempt to impart energy to the electrons in the substrate material. . In some embodiments, a dedicated coating that is more susceptible to electron release than the underlying material of the photocathode 205 can be applied to the photocathode 205 to increase the photoelectric effect.

在各種實施例中，陽極210相對於光陰極205以正電壓操作。陽極210可為此項技術者已知之能夠接收電流的任何適當的導體或半導體材料。在一些實施例中，陽極210可由包括但不限於鎢或其類似者之材料建構，以改良陽極210之熱力學效能(例如，在開關關斷期間吸收熱)。 In various embodiments, anode 210 operates at a positive voltage relative to photocathode 205. The anode 210 can be any suitable conductor or semiconductor material known to those skilled in the art that is capable of receiving electrical current. In some embodiments, the anode 210 can be constructed from materials including, but not limited to, tungsten or the like to improve the thermodynamic performance of the anode 210 (eg, to absorb heat during switch off).

由光陰極205發射之電子可跨越真空被吸引至陽極210之正電壓以產生電流。在一些實例實施例中，陽極可窄於或寬於陰極。在一些實例實施例中，陽極210可為平行於光陰極205之銅板。在其他實例實施例中，可使用在電子到達之表面上具有碳或碳化物合金塗層的銅板。在一些實施例中，在陽極210上使用碳或碳化物合金塗層在電子衝擊下可具有低濺鍍或離子發射速率。 Electrons emitted by photocathode 205 can be attracted to a positive voltage of anode 210 across a vacuum to generate a current. In some example embodiments, the anode may be narrower or wider than the cathode. In some example embodiments, anode 210 may be a copper plate that is parallel to photocathode 205. In other example embodiments, a copper plate having a carbon or carbide alloy coating on the surface on which the electrons arrive may be used. In some embodiments, the use of a carbon or carbide alloy coating on the anode 210 can have a low sputtering or ion emission rate under electron impact.

在另一實例實施例中，若裝置需要足夠堅韌以在切換事件期間吸收高能量脈衝或以有限電流操作從而導致光陰極205與陽極210之間的高壓，則陽極210可為鎢。在另一實例實施例中，陽極210自身可包含光陰極205，使得裝置可操作以在兩個方向上傳導電流。 In another example embodiment, the anode 210 may be tungsten if the device needs to be tough enough to absorb high energy pulses during a switching event or to operate at a limited current resulting in a high voltage between the photocathode 205 and the anode 210. In another example embodiment, the anode 210 itself may include a photocathode 205 such that the device is operable to conduct current in both directions.

光電開關200可裝設於電路(諸如，圖1B之實例電路)中，使得其由絕緣材料套環230包圍以避免電流繞過裝 置。此電隔離亦可藉由用真空包圍光電開關200自身來達成。光電開關200亦應經裝設以便避免與外部表面及周圍設備建立導電通路。 Photoelectric switch 200 can be mounted in a circuit, such as the example circuit of Figure IB, such that it is surrounded by an insulating material collar 230 to avoid current bypassing the device. This electrical isolation can also be achieved by surrounding the photoelectric switch 200 itself with a vacuum. The photoelectric switch 200 should also be installed to avoid establishing a conductive path with the external surface and surrounding equipment.

當在光電開關200內建立高真空且使所有表面經恰當地絕緣或隔離時，電僅可在光源220接通且經由光電效應使電子自光陰極205發射時流動。在一些實施例中，當光陰極205相對於陽極210具有絕對值足夠大之負電位時，電流可僅在一個方向上流動。流經裝置之電流的量取決於由光陰極205釋放之電子之數目，且因此藉由光源220之強度調節。 When a high vacuum is established within the photoelectric switch 200 and all surfaces are properly insulated or isolated, electricity can only flow when the light source 220 is turned on and electrons are emitted from the photocathode 205 via a photoelectric effect. In some embodiments, when the photocathode 205 has a negative potential that is sufficiently large relative to the anode 210, the current may flow in only one direction. The amount of current flowing through the device depends on the number of electrons released by photocathode 205 and is therefore regulated by the intensity of light source 220.

圖3至圖8提供光電開關200之替代實施例之說明。遍及各種實施例維持參考指定符，使得兩個或大於兩個圖所共有之組件將使用同一參考指定符。在圖2至圖8中，光電開關200之各種實施例將替代地標記為200A至200G以區分所提供之不同實例。如先前所提到，諸圖僅意欲促進對較佳實施例之描述，且並不說明所描述實施例之每個態樣且不應被解釋為限制本發明之範疇。 3 through 8 provide an illustration of an alternate embodiment of the photoelectric switch 200. The reference specifier is maintained throughout various embodiments such that two or more components common to both graphs will use the same reference specifier. In Figures 2-8, various embodiments of the photoelectric switch 200 will alternatively be labeled 200A through 200G to distinguish the different examples provided. The illustrations are merely intended to facilitate the description of the preferred embodiments, and are not intended to limit the scope of the invention.

圖3說明圖2之受控光電開關200之替代實施例200B，其中反射表面345用以將光導向至陰極上。光陰極205可連接至輸入電導體215。陽極210可連接至輸出電導體240。光陰極205可藉由含於真空腔室235內部之真空225而與陽極210分離。如同圖2之實施例200A，光電開關200B可經由輸入電導體215及輸出電導體240連接至外部電路(未圖示)，該外部電路可在光陰極205與陽極210之間施加電壓。 3 illustrates an alternate embodiment 200B of the controlled optoelectronic switch 200 of FIG. 2 in which a reflective surface 345 is used to direct light onto the cathode. Photocathode 205 can be coupled to input electrical conductor 215. The anode 210 can be connected to the output electrical conductor 240. The photocathode 205 can be separated from the anode 210 by a vacuum 225 contained within the vacuum chamber 235. As with embodiment 200A of FIG. 2, photoswitch 200B can be coupled to an external circuit (not shown) via input electrical conductor 215 and output electrical conductor 240, which can apply a voltage between photocathode 205 and anode 210.

在光電開關200的諸如圖3之實例實施例200B的一些實施例中，將光源220與光陰極205安裝於真空腔室235之同一末端上可較為便利或另外有利的。此可出於諸如以下各者之原因：製造或維護之容易性，或諸如組件定位以避免濺鍍或非預期電弧作用之其他考慮因素。在此處所展示之光電開關200B之實施例中，反射元件345定位於真空腔室235內部，使得由光源220發射之光被導向至光陰極205之光發射表面上。反射元件345可為將光重新導向至光陰極205之光發射表面上的鏡面、透鏡、拋光表面或其他光學元件。在一些實施例中，反射元件345可由絕緣材料製成且經組態以防止非預期電弧作用或材料濺鍍。舉例而言，可使用具有經選擇以反射照明之適當波長之厚度的絕緣材料之交替層製作雙向色鏡。 In some embodiments of the photoelectric switch 200, such as the example embodiment 200B of FIG. 3, it may be convenient or otherwise advantageous to mount the light source 220 and the photocathode 205 on the same end of the vacuum chamber 235. This may be due to reasons such as ease of manufacture or maintenance, or other considerations such as component positioning to avoid sputtering or unintended arcing. In the embodiment of the photoelectric switch 200B shown herein, the reflective element 345 is positioned inside the vacuum chamber 235 such that light emitted by the light source 220 is directed onto the light emitting surface of the photocathode 205. Reflective element 345 can be a mirror, lens, polishing surface, or other optical component that redirects light onto the light emitting surface of photocathode 205. In some embodiments, reflective element 345 can be made of an insulating material and configured to prevent unintended arcing or material sputtering. For example, a bidirectional color mirror can be fabricated using alternating layers of insulating material having a thickness selected to reflect the appropriate wavelength of illumination.

圖4說明圖2之受控光電開關200之替代實施例200C，其中控制環405用以促進朝向陽極210之電子流動。光陰極205可連接至輸入電導體215。陽極210可連接至輸出電導體240。光陰極205可藉由含於真空腔室235內部之真空225而與陽極210分離。如同圖2之實施例200A，光電開關200C可經由輸入電導體215及輸出電導體240連接至外部電路(未圖示)，該外部電路可在光陰極205與陽極210之間施加電壓。 4 illustrates an alternate embodiment 200C of the controlled optoelectronic switch 200 of FIG. 2 in which the control loop 405 is used to facilitate electron flow toward the anode 210. Photocathode 205 can be coupled to input electrical conductor 215. The anode 210 can be connected to the output electrical conductor 240. The photocathode 205 can be separated from the anode 210 by a vacuum 225 contained within the vacuum chamber 235. As with embodiment 200A of FIG. 2, photoswitch 200C can be coupled to an external circuit (not shown) via input electrical conductor 215 and output electrical conductor 240, which can apply a voltage between photocathode 205 and anode 210.

在圖4之實例實施例200C中，光陰極205可為如本文中先前所描述之透射型陰極，從而允許由光源220發射之光子穿過光陰極205之背面進入，穿過光陰極205，將能 量賦予至光陰極205中之電子且起始電子朝向陽極210之光發射。此情形允許光源220裝設於光陰極205後方，如圖4之實施例中所展示。 In the example embodiment 200C of FIG. 4, the photocathode 205 can be a transmissive cathode as previously described herein to allow photons emitted by the source 220 to pass through the back side of the photocathode 205, through the photocathode 205, Energy is imparted to the electrons in the photocathode 205 and the starting electrons are emitted toward the light of the anode 210. This situation allows the light source 220 to be mounted behind the photocathode 205, as shown in the embodiment of FIG.

光電開關200C之實施例亦可包括在圖4中以橫截面展示之一或多個控制環405。控制環405可包圍光陰極205，或替代地包圍光陰極205與陽極210之間的空間，且可具有環形形狀，但熟習此項技術者將理解，此僅為許多可能形狀及組態中之一者。控制環405可由類似於用於建構陽極210之材料的材料建構。舉例而言，在一些實施例中，控制環405可包含導電且不易於使可染污真空腔室235之內部之材料脫落的任何適當材料。如先前所描述，控制環405相對於光陰極205可具有零或負電壓，從而允許其用以操控電子朝向陽極210且減少到達真空腔室235之壁的雜散電子。 Embodiments of the photoelectric switch 200C may also include one or more control loops 405 shown in cross-section in FIG. Control loop 405 may surround photocathode 205, or alternatively surround the space between photocathode 205 and anode 210, and may have a toroidal shape, although those skilled in the art will appreciate that this is only possible in many possible shapes and configurations. One. Control ring 405 can be constructed of a material similar to the material used to construct anode 210. For example, in some embodiments, control ring 405 can comprise any suitable material that is electrically conductive and that does not readily detach material within the stainable vacuum chamber 235. As previously described, the control loop 405 can have a zero or negative voltage relative to the photocathode 205, allowing it to manipulate electrons toward the anode 210 and reduce stray electrons that reach the walls of the vacuum chamber 235.

光電開關200C說明將陽極210密封至真空腔室235之一個末端的替代方法，其中陽極210可用以形成相對於真空腔室235中之開口的密封。光電開關實施例200C亦說明添加冷卻架構410以自陽極210移除過剩熱。冷卻架構410可為任何適當的主動或被動冷卻架構，包括但不限於用於移除、吸收或重新導向熱之散熱器、導熱管、冷卻劑導管或任何適當架構。實例實施例200C展示諸如鋁鰭片之突出物以提供被動空氣冷卻，但此僅為實例且不應被解釋為以任何方式進行限制。 Photoelectric switch 200C illustrates an alternative method of sealing anode 210 to one end of vacuum chamber 235, where anode 210 can be used to form a seal relative to the opening in vacuum chamber 235. Photoelectric switch embodiment 200C also illustrates the addition of cooling architecture 410 to remove excess heat from anode 210. The cooling architecture 410 can be any suitable active or passive cooling architecture including, but not limited to, a heat sink for removing, absorbing, or redirecting heat, a heat pipe, a coolant conduit, or any suitable architecture. Example embodiment 200C exhibits protrusions such as aluminum fins to provide passive air cooling, but this is merely an example and should not be construed as limiting in any way.

一些電極(諸如，光陰極205或陽極210)可足夠良好地耐熱以經由導體及封裝在被動散熱及傳導式冷卻之情 況下操作。一些高功率設計可使用能夠移除額外熱量之冷卻系統，諸如導熱管或循環冷卻劑。替代地，一些高功率設計可具有實體上大的電極，其由在極高溫度下操作使得可自切換或控制大負載吸收大量能量之材料製成。 Some of the electrodes, such as photocathode 205 or anode 210, may be sufficiently heat resistant to operate via passive conduction and conduction cooling via conductors and packages. Some high power designs may use a cooling system that removes extra heat, such as a heat pipe or a circulating coolant. Alternatively, some high power designs may have physically large electrodes that are made of materials that operate at very high temperatures such that they can self-switch or control large loads to absorb large amounts of energy.

圖5說明圖2之受控光電開關200之替代實施例200D，其具有替代外觀尺寸及用於控制電子流動之加速度的控制柵505。光陰極205可連接至輸入電導體215。陽極210可連接至輸出電導體240。光陰極205可藉由含於真空腔室235內部之真空225而與陽極210分離。如同圖2之實施例200A，光電開關200D可經由輸入電導體215及輸出電導體240連接至外部電路(未圖示)，該外部電路可在光陰極205與陽極210之間施加電壓。 5 illustrates an alternate embodiment 200D of the controlled optoelectronic switch 200 of FIG. 2 having a control grid 505 that replaces the apparent size and the acceleration used to control the flow of electrons. Photocathode 205 can be coupled to input electrical conductor 215. The anode 210 can be connected to the output electrical conductor 240. The photocathode 205 can be separated from the anode 210 by a vacuum 225 contained within the vacuum chamber 235. As with the embodiment 200A of FIG. 2, the photoswitch 200D can be coupled to an external circuit (not shown) via an input electrical conductor 215 and an output electrical conductor 240 that can apply a voltage between the photocathode 205 and the anode 210.

光電開關200D展示添加與光陰極205相距短距離且在光陰極上之可選控制柵505。在一些實施例中，控制柵505可經組態為在光陰極205附近且大體上平行於光陰極而置放的精細導電網狀物。控制柵505相對於光陰極205可具有小的正電壓，且可用以使電子加速遠離光陰極205朝向陽極210。控制柵505可允許電子以低電壓及高效率跨越相對較大距離穿過真空腔室235至陽極210。控制柵505可允許控制柵505及陽極210兩者處之低正電壓，同時維持恰好在光陰極205上方之陡梯度以將電子朝向陽極210拖曳至真空腔室235中。使用低電壓可促成光電開關200D之更高效操作。在一些實施例中，亦可與變化之照明位準一起或結合變化之照明位準而使用控制柵505以藉由相對於光陰極205將負電壓 施加至控制柵505來抑制電流。 Photoelectric switch 200D exhibits an optional control gate 505 that is added a short distance from photoconductor 205 and on the photocathode. In some embodiments, control gate 505 can be configured as a fine conductive mesh disposed adjacent to photocathode 205 and substantially parallel to the photocathode. Control gate 505 can have a small positive voltage relative to photocathode 205 and can be used to accelerate electrons away from photocathode 205 toward anode 210. Control gate 505 can allow electrons to pass through vacuum chamber 235 to anode 210 across a relatively large distance with low voltage and high efficiency. Control gate 505 may allow for a low positive voltage at both control gate 505 and anode 210 while maintaining a steep gradient just above photocathode 205 to drag electrons toward anode 210 into vacuum chamber 235. The use of a low voltage can contribute to more efficient operation of the photoelectric switch 200D. In some embodiments, control gate 505 can also be used with varying illumination levels or in conjunction with varying illumination levels to suppress current flow by applying a negative voltage to control gate 505 relative to photocathode 205.

光電開關200D亦展示安裝於真空腔室235外部之光源220。此情形建議真空腔室235之壁為透明或至少半透明的，使得足夠量之照明到達光陰極205以起始光發射。 Photoelectric switch 200D also displays light source 220 mounted external to vacuum chamber 235. This situation suggests that the walls of the vacuum chamber 235 are transparent or at least translucent such that a sufficient amount of illumination reaches the photocathode 205 to initiate light emission.

最後，光電開關200D中之真空腔室235經展示為具有不同於先前實施例之外觀尺寸的外觀尺寸。在此實例中，真空腔室235之外觀尺寸可為卵形或球形。此外觀尺寸以及展示於其他圖式中之任何外觀尺寸意欲為例示性的，且並不意欲解釋為以任何方式進行限制。 Finally, vacuum chamber 235 in photoelectric switch 200D is shown to have an apparent size that is different from the apparent dimensions of the prior embodiments. In this example, the vacuum chamber 235 may be ovoid or spherical in appearance. Furthermore, the appearance of the dimensions, as well as any of the appearances shown in the drawings, are intended to be illustrative, and are not intended to be construed as limiting in any manner.

圖6說明圖2之受控光電開關200之替代實施例200E，其特徵在於附接至光陰極205之用於冷卻的冷卻架構(例如，散熱片)410。光陰極205可連接至輸入電導體215。陽極210可連接至輸出電導體240。光陰極205可藉由含於真空腔室235內部之真空225而與陽極210分離。如同圖2之實施例200A，光電開關200D可經由輸入電導體215及輸出電導體240連接至外部電路(未圖示)，該外部電路可在光陰極205與陽極210之間施加電壓。可選控制柵505可用以加速及操控電子在光陰極205與陽極210之間的流動。 6 illustrates an alternate embodiment 200E of the controlled optoelectronic switch 200 of FIG. 2 featuring a cooling architecture (eg, heat sink) 410 for cooling to the photocathode 205. Photocathode 205 can be coupled to input electrical conductor 215. The anode 210 can be connected to the output electrical conductor 240. The photocathode 205 can be separated from the anode 210 by a vacuum 225 contained within the vacuum chamber 235. As with the embodiment 200A of FIG. 2, the photoswitch 200D can be coupled to an external circuit (not shown) via an input electrical conductor 215 and an output electrical conductor 240 that can apply a voltage between the photocathode 205 and the anode 210. An optional control gate 505 can be used to accelerate and manipulate the flow of electrons between the photocathode 205 and the anode 210.

在實施例200E中，光源220及陽極210兩者經展示為整合至真空腔室235之壁中且密封至該壁。在此實施例中，光陰極205經展示為安裝及密封至真空腔室235之壁中的開口。出於說明性及例示性目的而提供安裝組件之此等替代方法，且其並不意圖解釋為以任何方式進行限制。熟習此項技術者將發現，將有可能將任何數目種安裝及密封方法 組合至光電開關中而不偏離本文中所描述之概念。 In embodiment 200E, both light source 220 and anode 210 are shown integrated into the wall of vacuum chamber 235 and sealed to the wall. In this embodiment, photocathode 205 is shown as being mounted and sealed to an opening in the wall of vacuum chamber 235. These alternative methods of installing components are provided for illustrative and exemplary purposes, and are not intended to be construed as limiting in any way. Those skilled in the art will recognize that it will be possible to combine any number of mounting and sealing methods into a photoelectric switch without departing from the concepts described herein.

在實施例200E中，冷卻架構410可附接至光陰極205之背面。冷卻架構410可為任何適當的主動或被動冷卻架構，包括但不限於用於移除、吸收或重新導向熱之散熱器、導熱管、冷卻劑導管或任何適當架構。實例實施例200E展示諸如鋁鰭片之突出物以提供被動空氣冷卻，但此僅為實例且不應被解釋為以任何方式進行限制。 In an embodiment 200E, a cooling architecture 410 can be attached to the back side of the photocathode 205. The cooling architecture 410 can be any suitable active or passive cooling architecture including, but not limited to, a heat sink for removing, absorbing, or redirecting heat, a heat pipe, a coolant conduit, or any suitable architecture. Example embodiment 200E exhibits protrusions such as aluminum fins to provide passive air cooling, but this is merely an example and should not be construed as limiting in any way.

圖7說明受控光電開關之替代實施例200F，其特徵在於用以保護壁免受材料濺鍍之內部遮蔽物705及710。光陰極205可連接至輸入電導體215。陽極210可連接至輸出電導體240。光陰極205可藉由含於真空腔室235內部之真空225而與陽極210分離。如同圖2之實施例200A，光電開關200F可經由輸入電導體215及輸出電導體240連接至外部電路(未圖示)，該外部電路可在光陰極205與陽極210之間施加電壓。可選控制柵505可用以加速及操控電子在光陰極205與陽極210之間的流動。可選控制環405可包圍光陰極205，或替代地包圍光陰極205與陽極210之間的空間，且可具有環形形狀，但熟習此項技術者將理解，此僅為許多可能形狀及組態中之一者。如先前所描述，控制環405相對於光陰極205可具有零或負電壓，從而允許其用以操控電子朝向陽極210且減少到達真空腔室235之壁的雜散電子。 Figure 7 illustrates an alternate embodiment 200F of a controlled photoelectric switch featuring internal shields 705 and 710 for protecting walls from material sputtering. Photocathode 205 can be coupled to input electrical conductor 215. The anode 210 can be connected to the output electrical conductor 240. The photocathode 205 can be separated from the anode 210 by a vacuum 225 contained within the vacuum chamber 235. As with embodiment 200A of FIG. 2, photoswitch 200F can be coupled to an external circuit (not shown) via input electrical conductor 215 and output electrical conductor 240, which can apply a voltage between photocathode 205 and anode 210. An optional control gate 505 can be used to accelerate and manipulate the flow of electrons between the photocathode 205 and the anode 210. The optional control loop 405 can surround the photocathode 205, or alternatively surround the space between the photocathode 205 and the anode 210, and can have a toroidal shape, but those skilled in the art will appreciate that this is only a number of possible shapes and configurations. One of them. As previously described, the control loop 405 can have a zero or negative voltage relative to the photocathode 205, allowing it to manipulate electrons toward the anode 210 and reduce stray electrons that reach the walls of the vacuum chamber 235.

除控制環405外，真空腔室235之壁亦可受可選遮蔽物705及710保護以免受材料濺鍍。如圖7中所展示，遮蔽物705及710可經配置為形狀類似於撐開之傘(在圖7中 以橫截面展示)的彎曲圓板，但應顯而易見，遮蔽物705及710之形狀及大小可出現變化而不偏離本文中所描述之概念。遮蔽物710可定位於光陰極205與真空腔室235之壁之間以防止材料自電極205及210濺鍍。類似地，遮蔽物705可出於類似目的而定位於陽極210與真空腔室235之壁的對應區域之間。在一些實施例中，遮蔽物可防止對裝置之內壁之至少一些區的污染，保持原始非導電區以防止或中斷沿裝置之內壁的任何導電通路。 In addition to the control ring 405, the walls of the vacuum chamber 235 can also be protected from material spatter by optional shields 705 and 710. As shown in Figure 7, the shields 705 and 710 can be configured as curved discs shaped like a propped umbrella (shown in cross-section in Figure 7), but it should be apparent that the shapes of the shields 705 and 710 and The size can vary without departing from the concepts described herein. The shield 710 can be positioned between the photocathode 205 and the wall of the vacuum chamber 235 to prevent material from being sputtered from the electrodes 205 and 210. Similarly, the shield 705 can be positioned between the anode 210 and a corresponding region of the wall of the vacuum chamber 235 for similar purposes. In some embodiments, the shield can prevent contamination of at least some of the inner walls of the device, maintaining the original non-conductive regions to prevent or interrupt any conductive pathways along the inner walls of the device.

圖8說明為易於製造而組態之受控光電開關之替代實施例200G。光陰極205可連接至輸入電導體215。陽極210可連接至輸出電導體240。光陰極205可藉由含於真空腔室235內部之真空225而與陽極210分離。如同圖2之實施例200A，光電開關200F可經由輸入電導體215及輸出電導體240連接至外部電路(未圖示)，該外部電路可在光陰極205與陽極210之間施加電壓。可選控制柵505可用以加速及操控電子在光陰極205與陽極210之間的流動。 Figure 8 illustrates an alternate embodiment 200G of a controlled opto-electronic switch configured for ease of manufacture. Photocathode 205 can be coupled to input electrical conductor 215. The anode 210 can be connected to the output electrical conductor 240. The photocathode 205 can be separated from the anode 210 by a vacuum 225 contained within the vacuum chamber 235. As with embodiment 200A of FIG. 2, photoswitch 200F can be coupled to an external circuit (not shown) via input electrical conductor 215 and output electrical conductor 240, which can apply a voltage between photocathode 205 and anode 210. An optional control gate 505 can be used to accelerate and manipulate the flow of electrons between the photocathode 205 and the anode 210.

在圖8之實施例200G中，真空腔室235可經組態為大體管狀，其中光陰極205經塑形及大小設定以覆蓋及密封「管」之一個末端且陽極210經塑形及大小設定以覆蓋及密封「管」之相對末端。冷卻架構410可附接至光陰極205及陽極210兩者以有助於自光開關200G移除過剩熱。在所展示之實例中，光源220係定位於真空腔室235之外部，經定位使得足以起始光陰極之光發射的量之照明可穿過真空腔室235之透明或半透明壁。可為易於製造而組態光電開關200G 之管狀實施例。然而，圖8中所展示之實施例僅出於說明之目的且並不意欲解釋為以任何方式進行限制。 In the embodiment 200G of FIG. 8, the vacuum chamber 235 can be configured to be generally tubular, wherein the photocathode 205 is shaped and sized to cover and seal one end of the "tube" and the anode 210 is shaped and sized. To cover and seal the opposite ends of the "tubes". Cooling architecture 410 can be attached to both photocathode 205 and anode 210 to facilitate removal of excess heat from optical switch 200G. In the example shown, light source 220 is positioned outside of vacuum chamber 235 and is positioned such that illumination sufficient to initiate light emission from the photocathode can pass through the transparent or translucent wall of vacuum chamber 235. A tubular embodiment of the photoelectric switch 200G can be configured for ease of manufacture. However, the embodiment shown in Figure 8 is for illustrative purposes only and is not intended to be construed as limiting in any way.

一些實例實施例允許量測在陰極與陽極之間流動的電壓及/或電流。此資訊可用於確保照明提供足夠電子以確保在保持低電壓降的同時足夠電流將流動。安裝於真空腔室235內部或替代地安裝於輸入電導體215及/或輸出電導體240上或附近之電流及/或電壓感測器可提供在一些實施例中可用作用於電流控制系統之回饋的電流及/或電壓量測值。理想地，開關200之實施例應藉由限制照明中所涉及之能量及使陰極至陽極電壓保持為低來平衡總體效率。實務上，此意謂調整照明以相對於為裝置外部之電路供電所需之電流提供一些適度過量電子。 Some example embodiments allow measurement of the voltage and/or current flowing between the cathode and the anode. This information can be used to ensure that the illumination provides enough electrons to ensure that sufficient current will flow while maintaining a low voltage drop. Current and/or voltage sensors mounted within or alternatively to or on the input electrical conductor 215 and/or output electrical conductor 240 may be provided in some embodiments for use as feedback for current control systems. Current and / or voltage measurements. Ideally, embodiments of switch 200 should balance overall efficiency by limiting the energy involved in illumination and keeping the cathode to anode voltage low. In practice, this means adjusting the illumination to provide some moderate excess electrons relative to the current required to power the circuitry external to the device.

一些實例實施例可包括調節照明以提供對電流之最大限制，該電流對應於由光電發射提供之電子之量。此情形亦允許藉由移除在可引起電子之光發射之波長下的所有照明來將電流設定為零(切斷光電開關200)。在實例實施例中，當光陰極205未受照明時，無電流將在光陰極205與陽極210之間流動，此係因為真空中將不存在電子或離子源。 Some example embodiments may include adjusting illumination to provide a maximum limit to current that corresponds to the amount of electrons provided by the photoemission. This situation also allows the current to be set to zero (cutting the photoelectric switch 200) by removing all illumination at the wavelength that can cause the emission of light from the electrons. In an example embodiment, when photocathode 205 is not illuminated, no current will flow between photocathode 205 and anode 210, since there will be no electron or ion source in the vacuum.

一些實例實施例可允許在以下各者處或接近以下各者配置照明、量測及控制組件：光陰極205，或陽極210或其兩者，此簡化以危險高壓操作之裝置之構造。在一些實例實施例中，控制及感測組件可配置於真空管之僅一個末端處以允許較容易操作或維護。量測方法包含但不限於量測經由連接件至外部電路之電流，感測裝置內部或外部之電場， 及陽極表面上之電子衝擊的熱、紅外線、光或紫外線量測。 Some example embodiments may allow the illumination, measurement, and control components to be configured at or near each of: photocathode 205, or anode 210, or both, which simplifies the construction of devices that operate at hazardous high voltages. In some example embodiments, the control and sensing assembly can be configured at only one end of the vacuum tube to allow for easier operation or maintenance. Measurement methods include, but are not limited to, measuring the current through the connector to an external circuit, sensing the electric field inside or outside the device, and measuring the thermal, infrared, optical, or ultraviolet light of the electron impact on the surface of the anode.

此等裝置可經建構為經移除或***於主動電路系統內，同時圍繞其之裝置或整個裝備繼續操作。當並非在對電子之光發射有效的波長下受照明時，裝置之惰性及非導電性質使此程序更容易。 Such devices may be constructed to be removed or inserted into the active circuitry while continuing to operate around the device or the entire equipment. The inert and non-conductive nature of the device makes the procedure easier when not illuminated at wavelengths that are effective for the emission of electrons.

所描述之實施例易受各種修改及替代形式影響，但在圖式中已藉助於實例展示且在本文中詳細描述其特定實例。然而，應理解，所描述之實施例不限於所揭示之特定形式或方法，而相反地，本發明將涵蓋所有修改、等效物及替代例。 The described embodiments are susceptible to various modifications and alternative forms, which have been shown by way of example in the drawings and the specific examples thereof are described in detail herein. It is understood, however, that the described embodiments are not limited to the specific forms or methods disclosed.

Claims (20)

一種用於高壓電流之整流的電力轉換電路，其包含：複數個光電開關，其包括：一光陰極；一陽極；一或多個光源；及一真空腔室，該真空腔室至少將該光陰極及該陽極圍封於一真空中且將該光陰極及該陽極固持於適當位置中使得其間存在一間隙；及一電路，該電路連接至該複數個光電開關中之每一者的該光陰極及該陽極且在其上供應一電壓差；其中對於該複數個光電開關中之每一者，該一或多個光源經定位使得由該一或多個光源發射之複數個光子係由該光陰極吸收，且其中藉由吸收該複數個光子而獲取之能量使待由該光陰極發射之複數個電子能夠行進至該陽極。  A power conversion circuit for rectifying a high voltage current, comprising: a plurality of photoelectric switches comprising: a photocathode; an anode; one or more light sources; and a vacuum chamber, the vacuum chamber at least the light The cathode and the anode are enclosed in a vacuum and the photocathode and the anode are held in position such that there is a gap therebetween; and a circuit connected to the light of each of the plurality of photoelectric switches a cathode and the anode are supplied with a voltage difference thereon; wherein for each of the plurality of photoelectric switches, the one or more light sources are positioned such that a plurality of photons emitted by the one or more light sources are The photocathode is absorbed, and wherein the energy obtained by absorbing the plurality of photons enables a plurality of electrons to be emitted by the photocathode to travel to the anode.   如請求項1之電力轉換電路，其中該電力轉換電路將高壓交流電電力轉換至高壓直流電電力。  The power conversion circuit of claim 1, wherein the power conversion circuit converts the high voltage alternating current power to the high voltage direct current power.   如請求項1之電力轉換電路，其中該電力轉換電路將高壓直流電電力轉換至高壓交流電電力。  The power conversion circuit of claim 1, wherein the power conversion circuit converts the high voltage direct current power to the high voltage alternating current power.   如請求項1之電力轉換電路，其中該電力轉換電路將直流電電力之一個電壓轉換至直流電電力之另一電壓。  The power conversion circuit of claim 1, wherein the power conversion circuit converts one voltage of the direct current power to another voltage of the direct current power.   一種高壓光電開關，其包含：一光陰極；一陽極； 一或多個光源；一真空腔室，該真空腔室至少將該光陰極及該陽極圍封於一真空中且將該光陰極及該陽極固持於適當位置中使得其間存在一間隙；及一電路，該電路連接至該光陰極及該陽極且在其上供應一電壓差；其中該一或多個光源經定位使得由該一或多個光源發射之複數個光子係由該光陰極吸收，且其中藉由吸收該複數個光子而獲取之能量使待由該光陰極發射之複數個電子能夠行進至該陽極。  A high-voltage photoelectric switch comprising: a photocathode; an anode; one or more light sources; a vacuum chamber, the vacuum chamber enclosing at least the photocathode and the anode in a vacuum and the photocathode and The anode is held in place such that there is a gap therebetween; and a circuit is coupled to the photocathode and the anode and supplies a voltage difference thereon; wherein the one or more light sources are positioned such that A plurality of photons emitted by the plurality of light sources are absorbed by the photocathode, and wherein the energy obtained by absorbing the plurality of photons enables a plurality of electrons to be emitted by the photocathode to travel to the anode.   如請求項5之高壓光電開關，其進一步包含一控制柵，其中該控制柵接近該光陰極而定位，其中該控制柵相對於該光陰極具有一正電壓，且其中該控制柵之該正電壓有助於使由該光陰極發射之電子加速遠離該光陰極且朝向該陽極。  The high voltage photoelectric switch of claim 5, further comprising a control gate, wherein the control gate is positioned adjacent to the photocathode, wherein the control gate has a positive voltage relative to the photocathode, and wherein the positive voltage of the control gate Helps accelerate electrons emitted by the photocathode away from the photocathode and toward the anode.   如請求項5之高壓光電開關，其進一步包含一控制環，其中該控制環包圍該真空腔室內部之在該光陰極與該陽極之間的一區域，其中該控制環相對於該陽極具有一負電壓，且其中該控制環有助於導引由該光陰極發射之電子遠離該真空腔室之一內部表面且朝向該陽極。  The high voltage photoelectric switch of claim 5, further comprising a control ring, wherein the control ring surrounds an area between the photocathode and the anode inside the vacuum chamber, wherein the control ring has a phase relative to the anode A negative voltage, and wherein the control loop helps direct electrons emitted by the photocathode away from an interior surface of the vacuum chamber and toward the anode.   如請求項5之高壓光電開關，其進一步包含附接至該光陰極之一冷卻架構。  A high voltage photoelectric switch according to claim 5, further comprising a cooling structure attached to the photocathode.   如請求項5之高壓光電開關，其進一步包含附接至該陽極 之一冷卻架構。  A high voltage photoelectric switch according to claim 5, further comprising a cooling structure attached to the anode.   如請求項5之高壓光電開關，其中該一或多個光源係安裝於該真空腔室內部。  A high voltage photoelectric switch according to claim 5, wherein the one or more light sources are mounted inside the vacuum chamber.   如請求項5之高壓光電開關，其中該真空腔室之壁允許光穿過，且其中該一或多個光源係安裝於該真空腔室外部。  A high voltage photoelectric switch according to claim 5, wherein the wall of the vacuum chamber allows light to pass therethrough, and wherein the one or more light sources are mounted outside the vacuum chamber.   如請求項5之高壓光電開關，其中該一或多個光源係安裝於該光陰極後方，其中該光陰極為一透射型光陰極，且其中來自該等光源之光子進入該光陰極之一背面且引起電子自該光陰極之一正面的該發射。  The high-voltage photoelectric switch of claim 5, wherein the one or more light sources are mounted behind the photocathode, wherein the photocathode is a transmissive photocathode, and wherein photons from the light sources enter a back surface of the photocathode This emission of electrons from the front side of one of the photocathodes is caused.   如請求項5之高壓光電開關，其中該光陰極為一第一光陰極且該陽極為一第二光陰極，且其中該一或多個光源經定位以將照明提供至該第一光陰極或該第二光陰極，從而允許系統在任一方向上導電。  The high voltage photoelectric switch of claim 5, wherein the photocathode is a first photocathode and the anode is a second photocathode, and wherein the one or more light sources are positioned to provide illumination to the first photocathode or The second photocathode allows the system to conduct in either direction.   一種用於電流切換之裝置，其包含：一光陰極；一陽極；一或多個光源，該一或多個光源經定位使得由該一或多個光源發射之光子刺激電子自該光陰極之發射；一電路，該電路連接至光電陰極及該陽極且在其上供應一電壓；及一真空腔室，該真空腔室至少將該光陰極及該陽極圍封於一真空中且將該光陰極及該陽極固持於適當位置中使得其間存在一間隙。  A device for current switching, comprising: a photocathode; an anode; one or more light sources, the one or more light sources being positioned such that photons emitted by the one or more light sources stimulate electrons from the photocathode a circuit, the circuit is coupled to the photocathode and the anode and supplied with a voltage thereon; and a vacuum chamber that encloses the photocathode and the anode in a vacuum and the light The cathode and the anode are held in place such that there is a gap therebetween.   如請求項14之用於電流切換的裝置，其進一步包含一控 制柵，其中該控制柵接近該光陰極而定位，其中該控制柵相對於該光陰極具有一正電壓，且其中該控制柵之該正電壓有助於使由該光陰極發射之電子加速遠離該光陰極且朝向該陽極。  The apparatus for current switching of claim 14, further comprising a control gate, wherein the control gate is positioned adjacent to the photocathode, wherein the control gate has a positive voltage relative to the photocathode, and wherein the control gate The positive voltage helps accelerate electrons emitted by the photocathode away from the photocathode and toward the anode.   如請求項14之用於電流切換的裝置，其進一步包含一控制環，其中該控制環包圍該真空腔室內部之在該光陰極與該陽極之間的一區域，其中該控制環相對於該陽極具有一負電壓，且其中該控制環有助於導引由該光陰極發射之電子遠離該真空腔室之一內部表面且朝向該陽極。  The apparatus for current switching of claim 14, further comprising a control ring, wherein the control ring surrounds an area between the photocathode and the anode inside the vacuum chamber, wherein the control ring is opposite to the control ring The anode has a negative voltage, and wherein the control loop helps direct electrons emitted by the photocathode away from an interior surface of the vacuum chamber and toward the anode.   如請求項14之用於電流切換的裝置，其進一步包含附接至該裝置之一冷卻架構，其中該冷卻架構有助於自該裝置移除過剩熱。  The apparatus for current switching of claim 14 further comprising a cooling architecture attached to the apparatus, wherein the cooling architecture facilitates removal of excess heat from the apparatus.   如請求項14之用於電流切換的裝置，其中該光陰極為一第一光陰極且該陽極為一第二光陰極，且其中該一或多個光源經定位以將照明提供至該第一光陰極或該第二光陰極，從而允許系統在任一方向上導電。  The apparatus for current switching of claim 14, wherein the photocathode is a first photocathode and the anode is a second photocathode, and wherein the one or more light sources are positioned to provide illumination to the first light The cathode or the second photocathode allows the system to conduct in either direction.   如請求項14之用於電流切換的裝置，其進一步包含附接至該裝置之一冷卻架構。  The apparatus for current switching of claim 14 further comprising a cooling architecture attached to the apparatus.   如請求項14之用於電流切換的裝置，其中該一或多個光源中之至少一者能夠在將不刺激電子自該光陰極之該發射的一波長下發射光子，其中在將不刺激電子之該發射的一波長下的該等光子用於該裝置之大體照明。  The apparatus for current switching of claim 14, wherein at least one of the one or more light sources is capable of emitting photons at a wavelength that will not stimulate electron emission from the photocathode, wherein the electrons will not be stimulated The photons at a wavelength of the emission are used for general illumination of the device.