TW201822291A - Fluid uniformity device achieves the large-area uniform coating composed of the linear uniformity of two axes - Google Patents

Fluid uniformity device achieves the large-area uniform coating composed of the linear uniformity of two axes Download PDF

Info

Publication number
TW201822291A
TW201822291A TW105139815A TW105139815A TW201822291A TW 201822291 A TW201822291 A TW 201822291A TW 105139815 A TW105139815 A TW 105139815A TW 105139815 A TW105139815 A TW 105139815A TW 201822291 A TW201822291 A TW 201822291A
Authority
TW
Taiwan
Prior art keywords
fluid
plasma
sleeve
bearing unit
distribution device
Prior art date
Application number
TW105139815A
Other languages
Chinese (zh)
Other versions
TWI623052B (en
Inventor
潘文珏
林銘俊
李人傑
葉秀蓉
Original Assignee
國家中山科學研究院
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 國家中山科學研究院 filed Critical 國家中山科學研究院
Priority to TW105139815A priority Critical patent/TWI623052B/en
Application granted granted Critical
Publication of TWI623052B publication Critical patent/TWI623052B/en
Publication of TW201822291A publication Critical patent/TW201822291A/en

Links

Landscapes

  • Plasma Technology (AREA)

Abstract

The invention provides a fluid uniformity device that sleeves a rotational pipe on an outside of long-pipe type fluid carrying unit. By using the two-dimensional direction control of spin coating of sleeve combined with the reciprocating movement of the substrate, the large-area uniform coating composed of the linear uniformity of two axes is achieved. (Claim 1) The invention comprises: a fluid-carrying unit being a sealed hollow long pipe, one end of the long pipe having at least a fluid inlet, a side wall of the long pipe having at least a fluid outlet; a sleeve sleeved on an outside of the fluid-carrying unit, the sleeve and the fluid-carrying unit having coaxial, the side wall of the sleeve having at least a fluid spout, the sleeve rotating by taking to its axis as a center; and at least two isolated rotation rollers disposed between the fluid carrying unit and the sleeve.

Description

流體均佈裝置    Fluid distribution device   

本發明係與薄膜製備技術有關,特別係指一種用於製備大面積均勻薄膜層之流體均佈裝置。 The present invention relates to thin film preparation technology, and particularly to a fluid uniform distribution device for preparing a large-area uniform thin film layer.

薄膜製備是現代工業的基礎技術,舉凡半導體、面板、太陽能電池其基礎製造均需要精密之薄膜鍍膜之技術。精密且能大量生產之技術是維持競爭力的重要手段,因此大面積化以及均勻性之鍍膜技術就成為相關產業技術競爭之重要標的。 Thin film preparation is the basic technology of modern industry. For example, the basic manufacturing of semiconductors, panels, and solar cells requires precise thin film coating technology. Precise and mass-produced technology is an important means of maintaining competitiveness. Therefore, large-area and uniform coating technology has become an important target for technological competition in related industries.

對乾式鍍膜中之物理氣相沉積或化學氣相沉積之薄膜製備技術而言,如何大面積化生成均勻性薄膜,均為其關鍵性之技術所在。也就是氣體最終沉積於基板上的分佈,不論是以濺鍍靶材上的分子進行沉積或是以蒸發方式在基板上沉積,或是反應氣體於基板上沉積,都需要以某種方式將沉積物質均勻地散佈於基板上。 For the thin-film physical vapor deposition or chemical vapor deposition thin film preparation technology, how to form a uniform thin film over a large area is its key technology. That is, the distribution of the gas finally deposited on the substrate, whether it is deposited by sputtering on the target, or by evaporation, or the reaction gas is deposited on the substrate, it needs to be deposited in some way. The substance is evenly distributed on the substrate.

在鈉玻璃基板上製作銅銦鎵硒硫(CIGSS)薄膜太陽能電池,使用真空濺鍍技術或電鍍技術製作CIG(銅銦鎵)前驅物,結合快速熱處理(Rapid Thermal Processing,RTP)(US 5,578,503)製程-硒/硫化法(Selenization/Sulfurization) 製備CIGSS吸收層(US 8,741,685 B2),具有高品質、速度快且適合大面積生產的優點。2011年Shogo等人於美國專利8,012,546發表一種以電漿解離硒蒸氣進行四元素共蒸鍍之銅銦鎵硒薄膜太陽能電池之方法與設備,當金屬硒原料加熱蒸發後經過一電漿源,可提供額外能量給原本反應活性較低的硒原子團簇(Se2、Se5、Se6、Se7、Se8),解離成具有活性的硒原子,進而增加反應活性。如此形成的銅銦鎵硒薄膜具有大晶粒尺寸及平坦緻密之表面特點,有助於短路電流的提升以及填充因子的增加,使得光電轉換效率提升百分之五。但是由於共蒸鍍製程之設備及作用原理限制,使得此一作法無法達成大面積之均勻性,整個腔體充滿著硒蒸氣,絕大多數的硒蒸氣附著凝結於腔壁,也造成原料使用的浪費。因此可達到大面積均勻性且硒蒸氣侷限性之設備是必須的。本發明之一應用,於此電漿硒化之薄膜製備技術上,可使線性電漿經由轉動之噴嘴套管以及基板之反覆運動,獲得可大面積且均勻化之薄膜製備。 Copper indium gallium selenium sulfide (CIGSS) thin-film solar cells are fabricated on a soda glass substrate, and CIG (copper indium gallium) precursors are produced using vacuum sputtering technology or electroplating technology, combined with Rapid Thermal Processing (RTP) (US 5, 578,503) process-Selenization / Sulfurization CIGSS absorption layer (US 8,741,685 B2) is prepared, which has the advantages of high quality, fast speed, and suitability for large-scale production. In 2011, Shogo et al. Published a method and equipment for copper indium gallium selenium thin film solar cells using plasma dissociated selenium vapor for four-element co-evaporation in U.S. Patent 8,012,546. Provide additional energy to the originally less reactive selenium clusters (Se2, Se5, Se6, Se7, Se8), dissociate into active selenium atoms, thereby increasing the reactivity. The copper indium gallium selenium film formed in this way has the characteristics of large grain size and flat and dense surface, which contributes to the improvement of short-circuit current and the increase of the fill factor, which improves the photoelectric conversion efficiency by 5%. However, due to the limitations of the equipment and working principle of the co-evaporation process, this method cannot achieve a large area of uniformity. The entire cavity is filled with selenium vapor, and most of the selenium vapor adheres to and condenses on the cavity wall, which also causes the use of raw materials. waste. Therefore, equipment that can achieve large area uniformity and selenium vapor limitation is necessary. An application of the present invention is that in this plasma selenization film preparation technology, a linear plasma can be repeatedly moved through a rotating nozzle sleeve and a substrate to obtain a large-area and uniform film preparation.

1984年Shuskus等人於美國專利4,448,633發表一種以電漿氮化處理進行薄膜缺陷鈍化之方法,當基板上的薄膜欲進行氮化處理時,須將整個基板放置於電漿所涵蓋的範圍中。若將此原理應用於氫電漿輔助硒化中,金屬前驅層於一般硒化之低真空狀態下容易受到電漿的轟擊,導致產生粗糙的表面,將影響元件後續製程及光電轉換效率。因此必須 設計一電漿產生腔體與製程反應腔體分離之結構(亦即Remote Plasma System),可產生品質較佳之銅銦硒系列吸收層薄膜。將試片直接置入並使之與輸入氣體之電漿接觸,像這樣的製程反應腔有時稱之為直接電漿製程,與此不同之另一型冷電漿製程一Remote Plasma(亦稱之為down-stream製程)。這兩者不同之處在於原料氣體是否直接被激發成電漿。在直接製程中,所有原料氣體都暴露於電漿中,試片則完全浸置於電漿中。在Remote Plasma中,不是所有反應氣體都在電漿中一次激發,且基材位置遠離電漿區,氣體可同時輸入到放電區和放電區外之反應腔,通常靠近基材位置。這樣安排的好處是可以減少可能反應之項目及改善製程或對製程化學計量的控制。電漿對基材的一些物理效應在Remote reactor中得到減輕,幾乎可以完全免除輻射損傷。本項技術之一發明,係可將線性遠距電漿整合於動態噴嘴之中,既可使線性電漿經由轉動之噴嘴套管以及基板之反覆運動,獲得可大面積且均勻化之薄膜製備,亦可由遠距電漿之產生避免高強度電漿之直接損傷。 In 1984, Shuskus et al. Published a method for passivation of thin film defects by plasma nitridation in U.S. Patent No. 4,448,633. When the film on the substrate is to be nitrided, the entire substrate must be placed in the area covered by the plasma. If this principle is applied to hydrogen plasma-assisted selenization, the metal precursor layer is susceptible to plasma bombardment under the general low-vacuum state of selenization, resulting in a rough surface, which will affect the subsequent process of the element and the photoelectric conversion efficiency. Therefore, it is necessary to design a structure that separates the plasma generation cavity from the process reaction cavity (ie, the Remote Plasma System), which can produce a copper indium selenium series absorption layer film with better quality. The test piece is directly placed in contact with the plasma of the input gas. The reaction chamber is sometimes called a direct plasma process. In contrast, another type of cold plasma process, Remote Plasma (also known as This is a down-stream process). The difference between the two is whether the source gas is directly excited into a plasma. In the direct process, all raw gas is exposed to the plasma, and the test piece is completely immersed in the plasma. In Remote Plasma, not all reaction gases are excited in the plasma at one time, and the substrate is located far from the plasma area. The gas can be input to the discharge zone and the reaction chamber outside the discharge zone at the same time, usually near the substrate. The advantage of this arrangement is that it can reduce the items that may be reacted and improve the process or control of the process stoichiometry. Some physical effects of the plasma on the substrate are mitigated in the remote reactor, which can almost completely avoid radiation damage. One of the inventions of this technology is to integrate the linear remote plasma into the dynamic nozzle, which allows the linear plasma to repeatedly move through the rotating nozzle sleeve and the substrate to obtain a large area and uniform film preparation. It can also avoid the direct damage of high-strength plasma by the generation of remote plasma.

為解決先前技術之缺點,本發明係提供一種流體均佈裝置,係在長管型流體承載單元外套設一可旋轉之套管,利用該套管旋轉並結合基板往復移動之二維方向控制,達到兩軸之線性均勻化所構成之大面積均勻薄膜製備之方 法。 In order to solve the shortcomings of the prior art, the present invention provides a fluid uniform distribution device, which is provided with a rotatable sleeve on the outer tube of a long tube type fluid bearing unit, and the sleeve is rotated and combined with the two-dimensional direction control of the substrate to reciprocate. A method for preparing a large-area uniform film composed of two-axis linear homogenization.

本發明係為一種流體均佈裝置,係包括:一流體承載單元,係為一封閉中空之長管,該長管一端具有至少一流體入口,該長管側壁具有至少一流體出口;一套管,係套裝於該流體承載單元外側,該套管與該流體承載單元具有同軸心,該套管側壁具有至少一流體噴口,該套管係以其軸心為中心進行旋轉運動;以及至少二隔絕轉動滾輪,係設置於該流體承載單元與該套管之間。 The invention is a fluid uniform distribution device, which includes: a fluid bearing unit, which is a closed hollow long tube, one end of which has at least one fluid inlet, and the side wall of the long tube has at least one fluid outlet; a set of tubes Is sleeved on the outside of the fluid bearing unit, the sleeve is coaxial with the fluid bearing unit, the sidewall of the sleeve has at least one fluid nozzle, and the sleeve is rotated about its axis; and at least two are isolated The rotating roller is arranged between the fluid bearing unit and the sleeve.

本發明之一實施例中,該流體係為氣體、液體、液氣混合汽、固液混合、電漿或其他種類之流體。 In one embodiment of the present invention, the flow system is a gas, a liquid, a liquid-gas mixture vapor, a solid-liquid mixture, a plasma, or other types of fluid.

本發明之一實施例中,該流體承載單元係以不鏽鋼或石墨製成。 In one embodiment of the present invention, the fluid carrying unit is made of stainless steel or graphite.

本發明之流體均佈裝置可與電漿裂解裝置為一電漿均佈裝置,其係包括:一前述之流體均佈裝置;電漿產生單元,係位於該流體承載單元內部,其係包括高壓電極、介電層與至少二支撐件;該流體承載單元係作為該電漿產生單元之接地電極使用,該接地電極與該介電層間係定義一電漿產生空間,當於該高壓電極及該接地電極之間施加一高電壓,並將一反應氣體通入該電漿產生空間時,反應氣體在該電漿產生空間產生電漿,並使該電漿從該流體出口流至該流體承載單元與該套管間的空間,該套管同時進行旋轉運動,以將該電漿經該流體噴口向外噴出、塗佈在一目標工件示上。 The fluid uniform distribution device of the present invention and the plasma cracking device can be a plasma uniform distribution device, which includes: the aforementioned fluid uniform distribution device; a plasma generating unit, which is located inside the fluid bearing unit, which includes a high voltage An electrode, a dielectric layer, and at least two supporting members; the fluid bearing unit is used as a ground electrode of the plasma generating unit, and a plasma generating space is defined between the ground electrode and the dielectric layer; when the high voltage electrode and the When a high voltage is applied between the ground electrodes and a reaction gas is passed into the plasma generation space, the reaction gas generates a plasma in the plasma generation space and causes the plasma to flow from the fluid outlet to the fluid bearing unit In the space between the casing and the casing, the casing is rotated at the same time to spray the plasma outwardly through the fluid nozzle and apply it on a target workpiece.

本發明之一實施例中,該高壓電極係以石墨製成。 In one embodiment of the present invention, the high-voltage electrode is made of graphite.

本發明之一實施例中,該介電層係以石英製成。 In one embodiment of the present invention, the dielectric layer is made of quartz.

本發明之一實施例中,該接地電極(即該流體承載單元)係以石墨製成。 In one embodiment of the present invention, the ground electrode (that is, the fluid bearing unit) is made of graphite.

以上之概述與接下來的詳細說明及附圖,皆是為了能進一步說明本發明達到預定目的所採取的方式、手段及功效。而有關本發明的其他目的及優點,將在後續的說明及圖示中加以闡述。 The above summary and the following detailed description and drawings are all for further explaining the methods, means and effects adopted by the present invention to achieve the intended purpose. Other objects and advantages of the present invention will be described in the following description and drawings.

11‧‧‧流體承載單元 11‧‧‧ fluid bearing unit

111‧‧‧流體入口 111‧‧‧fluid inlet

112‧‧‧流體出口 112‧‧‧fluid outlet

12‧‧‧套管 12‧‧‧ Casing

121‧‧‧流體噴口 121‧‧‧ fluid nozzle

13‧‧‧隔絕轉動滾輪 13‧‧‧Isolated turning wheel

21‧‧‧流體承載單元 21‧‧‧ fluid bearing unit

211‧‧‧流體出口 211‧‧‧fluid outlet

22‧‧‧套管 22‧‧‧ Casing

221‧‧‧流體噴口 221‧‧‧ fluid nozzle

23‧‧‧隔絕轉動滾輪 23‧‧‧Isolated Turning Wheel

24‧‧‧電漿產生單元 24‧‧‧ Plasma generation unit

241‧‧‧高壓電極 241‧‧‧High-voltage electrode

242‧‧‧介電層 242‧‧‧ Dielectric layer

243‧‧‧支撐件 243‧‧‧Support

圖1係為本發明之流體均佈裝置結構示意圖。 FIG. 1 is a schematic structural diagram of a fluid uniform distribution device of the present invention.

圖2係為本發明之流體均佈裝置結構剖面示意圖。 Fig. 2 is a schematic sectional view showing the structure of a fluid uniform distribution device of the present invention.

圖3係為本發明之流體均佈裝置與電漿裂解裝置結合之另一實施例結構圖。 FIG. 3 is a structural diagram of another embodiment combining a fluid uniform distribution device and a plasma cracking device of the present invention.

以下係藉由特定的具體實例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點與功效。 The following is a description of specific embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

現有大面積薄膜塗佈技術中,常使用長管式或長條式的氣體均佈裝置、其噴嘴朝下,目標工件(例如玻璃基板)在該噴嘴下方來回往復移動,以在基板表面產生大面積均勻 薄膜,然而實際使用時只靠移動氣體均佈裝置與基板的相對位置,無法確保噴出的原料氣體分佈均勻,因此造成基板上的靶材薄膜厚度不均之情況。本發明為改善現有技術之缺點,使用一可旋轉之套管套設於均佈裝置(即本案的流體承載單元)外側,利用套管旋轉運動提供額外的噴塗方向與範圍控制,藉以更精確的對目標基板進行鍍膜,確保薄膜之厚度均勻,提升製程效率與產品良率。 In the existing large-area film coating technology, a long-tube or strip-type gas uniform distribution device is often used, with its nozzle facing downward, and a target workpiece (such as a glass substrate) moving back and forth under the nozzle to generate large areas on the substrate surface. The film is uniform in area, but in actual use, only the relative position of the mobile gas distribution device and the substrate cannot be guaranteed to distribute the ejected raw material gas uniformly, which results in uneven thickness of the target film on the substrate. In order to improve the shortcomings of the prior art, the present invention uses a rotatable sleeve to be set outside the uniform distribution device (ie, the fluid bearing unit in the present case), and uses the sleeve rotation motion to provide additional spraying direction and range control, thereby more accurate Coating the target substrate to ensure the uniform thickness of the film, improve process efficiency and product yield.

請同時參閱圖1與圖2所示,係為本發明之流體均佈裝置實施例結構示意圖與剖面圖,如圖所示,該流體均佈裝置包括:一流體承載單元11,係為一封閉中空之長管,該長管一端具有至少一流體入口111,該長管側壁具有至少一流體出口112;一套管12,係套裝於該流體承載單元11外側,該套管12與該長管(即該流體承載單元11)具有相同的軸心,該套管12側壁具有至少一流體噴口121,該套管係以其軸心為中心進行旋轉運動;以及至少二隔絕轉動滾輪13,係設置於該流體承載單元11與該套管12之間。本發明於實際應用時,該些流體入口、流體出口、流體噴口、隔絕轉動滾輪等元件之形狀、位置、數量係可依使用者實際需求而定,並不限於本發明內容與圖式所揭露之範圍。 Please refer to FIG. 1 and FIG. 2 at the same time, which are structural schematic diagrams and cross-sectional views of an embodiment of the fluid uniform distribution device of the present invention. As shown in the figure, the fluid uniform distribution device includes: a fluid bearing unit 11, which is a closed A hollow long tube having at least one fluid inlet 111 at one end thereof, and at least one fluid outlet 112 at the side wall of the long tube; a set of tubes 12 set on the outside of the fluid bearing unit 11, the sleeve 12 and the long tube (I.e., the fluid bearing unit 11) has the same axis, the side wall of the sleeve 12 has at least one fluid nozzle 121, and the sleeve is configured to rotate around its axis; and at least two isolated rotating rollers 13 are provided. Between the fluid bearing unit 11 and the sleeve 12. In the actual application of the present invention, the shapes, positions, and quantities of the fluid inlet, fluid outlet, fluid nozzle, isolated rotating roller and other components can be determined according to the actual needs of users, and are not limited to the contents disclosed by the present invention and the drawings. Range.

本發明之一實施例中,該流體出口係可為一狹縫口,意即一長條型開口,以將該流體承載單元內部之流體均勻送至該套筒與該流體承載單元間的空間。 In one embodiment of the present invention, the fluid outlet may be a slit, which means an elongated opening to uniformly send the fluid inside the fluid bearing unit to the space between the sleeve and the fluid bearing unit. .

本發明之流體均佈裝置實際操作時,工作流體從該流體入口111流入該流體承載單元11內,再從該流體出口112(此實施例為一狹縫口)流至該套管12與該流體承載單元11之間的空間內;該套管12之兩端或一端係設有旋轉驅動機構(圖未示),用於帶動該套管12以其軸心(與該流體承載單元11相同軸心)進行旋轉運動;該套管12將該流體從該些流體之複數噴口121噴出同時、進行順時或逆時針旋轉,以達到將該流體大面積均勻噴塗於一基板(圖未示)上之目的。本發明之一實施例中,該旋轉驅動機構可對該套管進行精密旋轉速率、方向之控制,以控制該流體均佈裝置之噴塗效果。該旋轉驅動機構與該套管結合之兩端形成氣密之接頭,以避免工作流體洩漏。由於目標基板工件(例如玻璃基板)可以精密的進行往復之運動,藉由基板此一行進方向(X軸),並搭配套筒之旋轉運動將活化之均佈流體於垂直行進方向上(Y軸)均勻分佈散佈於工件(玻璃基板)上。據此,藉由兩軸之線性均勻化所構成之大面積均勻塗佈得以完成。 When the fluid uniform distribution device of the present invention is actually operated, the working fluid flows from the fluid inlet 111 into the fluid bearing unit 11, and then flows from the fluid outlet 112 (a slit opening in this embodiment) to the sleeve 12 and the In the space between the fluid bearing units 11; two ends or one end of the sleeve 12 are provided with a rotation driving mechanism (not shown) for driving the sleeve 12 to its axis (same as the fluid bearing unit 11) Axis) to perform a rotational motion; the sleeve 12 sprays the fluid from the plurality of fluid nozzles 121 at the same time, and rotates clockwise or counterclockwise to achieve uniform spraying of the fluid on a substrate in a large area (not shown) On purpose. In one embodiment of the present invention, the rotary driving mechanism can control the precise rotation rate and direction of the sleeve to control the spraying effect of the fluid uniform distribution device. Air-tight joints are formed at both ends of the rotation driving mechanism and the sleeve to prevent leakage of working fluid. Since the target substrate workpiece (such as a glass substrate) can perform precise reciprocating movements, the moving direction of the substrate (X axis) and the rotation movement of the sleeve will align the activated uniformly distributed fluid in the vertical traveling direction (Y axis). ) Is evenly distributed on the workpiece (glass substrate). Accordingly, a large-area uniform coating constituted by linear homogenization of the two axes can be completed.

本發明之一實施例中,該流體入口係可位於該流體承載單元(長管)之其中一端、或兩端,係依使用者之需求而定。 In one embodiment of the present invention, the fluid inlet may be located at one end or both ends of the fluid bearing unit (long pipe), depending on the needs of the user.

本發明之一實施例中,該隔絕轉動滾輪係設置於該套管內靠近兩端(即靠近兩端的旋轉驅動機構)之位置,其係可為一長圓柱體,請參閱圖2,由於該流體出口固定不動,從 該流體出口流出的流體會被限制在該二隔絕轉動滾輪間的區域,而不會外洩到套管其他的位置,以達到限制流體流動區域、避免流體洩漏之效果。該隔絕轉動滾輪之實際位置、數量可依使用者需求而定。該隔絕轉動滾輪同時可確保該流體承載單元與該套管不直接接觸、使該套管旋轉順暢。 In one embodiment of the present invention, the isolated rotating roller system is disposed near the two ends (that is, the rotation driving mechanism near the two ends) in the sleeve, and the system can be a long cylinder. Please refer to FIG. 2. The fluid outlet is fixed, and the fluid flowing out of the fluid outlet will be restricted to the area between the two isolated rotating rollers, and will not leak to other positions of the casing to achieve the effect of restricting the fluid flow area and avoiding fluid leakage. The actual position and number of the isolated rotating rollers can be determined according to user needs. The isolated rotating roller can simultaneously ensure that the fluid bearing unit is not in direct contact with the casing, so that the casing can rotate smoothly.

本發明之流體均佈裝置係可用於CIGS太陽能電池元件製程、半導體元件製程等需要大面積蒸鍍薄膜之情況,然本發明之應用領域並不僅限於此,需要大面積噴佈流體的應用場合,如農業園藝灌溉、噴霧式冷卻系統、噴粒製程等不同技術領域場合,均可將本發明之流體均佈裝置依各領域實際需求稍加改變後,作為大面積流體均勻噴佈之用。 The fluid uniform distribution device of the present invention can be used in the case of large-area vapor-deposited films such as CIGS solar cell element manufacturing processes and semiconductor element manufacturing processes. However, the application field of the present invention is not limited to this. For example, in different technical fields such as agricultural horticultural irrigation, spray cooling system, and pelletizing process, the fluid uniform distribution device of the present invention can be used as a large-area fluid uniform spray after a slight change according to the actual needs in various fields.

本發明之一實施例中,若欲噴佈之工作流體係為電漿,可將本發明之流體均佈裝置與電漿裂解裝置共構結合為一電漿均佈裝置,以電漿裂解靶材後、再以大面積均勻噴佈薄膜於基板上。本發明之流體均佈裝置與電漿裂解裝置結合之另一實施例結構圖如圖3所示,係包括:一流體承載單元21,係為一封閉中空之長管,該長管側壁具有至少一流體出口211;一套管22,係套裝於該流體承載單元21外側,該套管22與該長管(即該流體承載單元21)具有相同的軸心,該套管22側壁具有至少一流體噴口221,該套管係以其軸心為中心進行旋轉運動;至少二隔絕轉動滾輪23,係設置於該流體承載單元21與該套管22之間;電漿產生單元24,係位於該流體承載 單元內部,其係包括高壓電極241、介電層242與支撐件243;其中該流體承載單元係作為該電漿產生單元之接地電極使用,該高壓電極、介電層與接地電極(該流體承載單元)構成一完整的電漿裂解裝置。 In one embodiment of the present invention, if the workflow system to be sprayed is a plasma, the fluid uniform distribution device of the present invention and the plasma cracking device can be co-constructed into a plasma uniform distribution device to crack the target by plasma. After the material is applied, the film is evenly sprayed on the substrate with a large area. The structure diagram of another embodiment of the fluid homogeneous device and the plasma cracking device of the present invention is shown in FIG. 3, which includes: a fluid bearing unit 21, which is a closed hollow long tube, and the side wall of the long tube has at least A fluid outlet 211; a set of tubes 22 is set outside the fluid bearing unit 21, the sleeve 22 has the same axis as the long pipe (ie, the fluid bearing unit 21), and the side wall of the sleeve 22 has at least one Fluid spout 221, the sleeve is made to rotate around its axis; at least two isolated rotating rollers 23 are arranged between the fluid bearing unit 21 and the sleeve 22; and a plasma generating unit 24 is located in the The inside of the fluid bearing unit includes a high-voltage electrode 241, a dielectric layer 242, and a support member 243. The fluid-bearing unit is used as a ground electrode of the plasma generating unit. The high-voltage electrode, the dielectric layer, and the ground electrode (the The fluid bearing unit) constitutes a complete plasma cracking device.

本發明一實施例之電漿均佈裝置中,該支撐件係用於讓該接地電極與該介電層間的距離保持固定,因此該接地電極與該介電層間可定義出一電漿產生空間,當於該高壓電極及該接地電極之間施加一高電壓,並將一反應氣體通入該電漿產生空間時,反應氣體在該電漿產生空間產生電漿,並使該電漿從該流體出口流至該流體承載單元與該套管間的空間,該套管同時進行旋轉運動,以將該電漿經該流體噴口向外噴出。其中該反應氣體係為硒或硫以及惰性氣體之混合氣體。 In the plasma uniform distribution device according to an embodiment of the present invention, the support is used to keep a fixed distance between the ground electrode and the dielectric layer, so a plasma generation space can be defined between the ground electrode and the dielectric layer. When a high voltage is applied between the high-voltage electrode and the ground electrode, and a reaction gas is passed into the plasma generation space, the reaction gas generates a plasma in the plasma generation space and causes the plasma to pass from the plasma The fluid outlet flows to the space between the fluid bearing unit and the bushing, and the bushing performs a rotary motion at the same time to spray the plasma outward through the fluid nozzle. The reaction gas system is a mixed gas of selenium or sulfur and an inert gas.

本發明一實施例之電漿均佈裝置中,該流體出口係為一狹縫口,當電漿由該電漿產生單元產生、從該流體承載單元之狹縫口流出時,該套管係相對於該流體承載單元轉動,使經由該狹縫口流出之電漿進一步經由該套管之的複數個流體噴口均勻地向外散佈。 In the plasma uniform distribution device according to an embodiment of the present invention, the fluid outlet is a slit opening. When the plasma is generated by the plasma generating unit and flows out from the slit opening of the fluid carrying unit, the sleeve system is Rotating with respect to the fluid bearing unit, the plasma flowing out through the slit opening is further spread evenly through the plurality of fluid nozzles of the sleeve.

本發明之一實施例中,該電漿均佈裝置係為一介電質放電(Dielectric Barrier Discharge,DBD)模組。 In one embodiment of the present invention, the plasma uniformity device is a Dielectric Barrier Discharge (DBD) module.

本發明之流體均佈裝置與電漿裂解裝置結合之另一實施例中,其電源係由一匹配之電源供應器(圖未示)所供 應。電漿系統中在兩電極間施加一足夠的高電壓,產生一高電場,使存在於反應空間之帶電粒子加速並獲得動能,因此,在圖3之介電層與流體承載單元(即接地電極)間的空間(以該支撐件隔離)產生電漿。由於電子質量極低,速度因此遠大於電場中其他粒子。在此速度差的情況下,粒子間很容易發生非彈性碰撞,並產生高活性的自由基,而能夠促使相關化學反應進行。本發明之一實施例中,從該流體承載單元一側(或兩側)進入之工作流體(反應氣體)在該電漿產生空間內轉換成游離電漿態,再從圖3中流體承載單元(即接地電極)下端之電漿流體出口(可為一狹縫口)往下噴出至該套管與該流體承載單元間之空間,再從該套管之複數流體噴口噴出、進行旋轉鍍膜動作。 In another embodiment of the fluid uniform distribution device of the present invention combined with a plasma cracking device, the power source is supplied by a matching power supply (not shown). In the plasma system, a sufficient high voltage is applied between the two electrodes to generate a high electric field, which accelerates the charged particles existing in the reaction space and obtains kinetic energy. Therefore, the dielectric layer and the fluid bearing unit (that is, the ground electrode) in FIG. 3 The space between) (isolated by the support) generates plasma. Due to the extremely low mass of the electrons, the velocity is much faster than other particles in the electric field. In the case of this speed difference, inelastic collisions between particles are easy to occur, and highly reactive free radicals are generated, which can promote related chemical reactions. In one embodiment of the present invention, the working fluid (reactive gas) entering from one side (or both sides) of the fluid bearing unit is converted into a free plasma state in the plasma generating space, and then the fluid bearing unit from FIG. 3 (That is, the ground electrode), the plasma fluid outlet (which can be a slit) at the lower end is sprayed down to the space between the sleeve and the fluid bearing unit, and then sprayed from the plurality of fluid nozzles of the sleeve to perform a rotary coating operation .

藉此,本發明之流體均佈裝置,經由一旋轉套管裝置可以均勻分佈流體於工件上,並獲得均勻之薄膜製備。本發明使用之旋轉套管結構簡單、可靠性高,使用者若有需要、只要加入高精密度的旋轉驅動機構(如電子控制步進馬達),便可精確調控流體均佈的狀態。本發明可應用於各種需要大面積塗佈或噴佈流體的場合,亦可與電漿裂解裝置結合作為電漿均佈裝置使用,具有多種應用領域與高運用彈性。 Thereby, the fluid uniform distribution device of the present invention can uniformly distribute the fluid on the workpiece through a rotating sleeve device, and obtain a uniform film preparation. The rotary sleeve used in the present invention has a simple structure and high reliability. If a user needs it, as long as a high-precision rotary drive mechanism (such as an electronically controlled stepping motor) is added, the state of uniform fluid distribution can be precisely controlled. The invention can be applied to various occasions where a large area of coating or spraying fluid is required, and can also be used as a plasma uniform distribution device in combination with a plasma cracking device, and has a variety of application fields and high application flexibility.

上述之實施例僅為例示性說明本發明之特點及其功效,而非用於限制本發明之實質技術內容的範圍。任何熟習此技藝之人士均可在不違背本發明之精神及範疇下,對 上述實施例進行修飾與變化。因此,本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-mentioned embodiments are merely illustrative for describing the features and effects of the present invention, and are not intended to limit the scope of the essential technical content of the present invention. Anyone skilled in the art can modify and change the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.

Claims (7)

一種流體均佈裝置,係包括:一流體承載單元,係為一封閉中空之長管,該長管一端具有至少一流體入口,該長管側壁具有至少一流體出口;一套管,係套裝於該流體承載單元外側,該套管與該流體承載單元具有同軸心,該套管側壁具有至少一流體噴口,該套管係以其軸心為中心進行旋轉運動;以及至少二隔絕轉動滾輪,係設置於該流體承載單元與該套管之間。     A fluid uniform distribution device includes: a fluid bearing unit, which is a closed hollow long tube, one end of which has at least one fluid inlet, and the side wall of the long tube has at least one fluid outlet; a set of tubes, which are sleeved on On the outside of the fluid bearing unit, the sleeve is coaxial with the fluid bearing unit, the sidewall of the sleeve has at least one fluid nozzle, and the sleeve is rotated around its axis; and at least two isolated rotating rollers are connected. It is arranged between the fluid bearing unit and the sleeve.     如請求項1所述之流體均佈裝置,其中該流體承載單元係以不鏽鋼或石墨製成。     The fluid distribution device according to claim 1, wherein the fluid bearing unit is made of stainless steel or graphite.     一種電漿均佈裝置,係包括:一如請求項1所述之流體均佈裝置;電漿產生單元,係位於該流體承載單元內部,其係包括高壓電極、介電層與支撐件;其中該流體承載單元係作為該電漿產生單元之接地電極使用,該接地電極與該介電層間係定義一電漿產生空間,當於該高壓電極及該接地電極之間施加一高電壓,並將一反應氣體通入該電漿產生空間時,該反應氣體在該電漿產生空間產生電漿,並使該電漿從該流體出口流至該流體承載單元與該套管間的空間,該套管同時進行旋轉運動,以將該電漿經該流體噴口向外噴出。     A plasma uniform distribution device includes: a fluid uniform distribution device as described in claim 1; a plasma generation unit is located inside the fluid bearing unit and includes a high-voltage electrode, a dielectric layer, and a support member; The fluid bearing unit is used as a ground electrode of the plasma generating unit. A space between the ground electrode and the dielectric layer defines a plasma generating space. When a high voltage is applied between the high voltage electrode and the ground electrode, and When a reaction gas passes into the plasma generation space, the reaction gas generates a plasma in the plasma generation space, and causes the plasma to flow from the fluid outlet to a space between the fluid bearing unit and the sleeve, the sleeve The tube rotates at the same time to spray the plasma outward through the fluid nozzle.     如請求項3所述之電漿均佈裝置,其中該高壓電極係以石墨製成。     The plasma uniform distribution device according to claim 3, wherein the high-voltage electrode is made of graphite.     如請求項3所述之電漿均佈裝置,其中該介電層係以石英製成。     The plasma uniformity device according to claim 3, wherein the dielectric layer is made of quartz.     如請求項3所述之電漿均佈裝置,其中該流體出口係為一狹縫口。     The plasma uniform distribution device according to claim 3, wherein the fluid outlet is a slit opening.     如請求項3所述之電漿均佈裝置,其中該反應氣體係為硒或硫以及惰性氣體之混合氣體。     The plasma uniform distribution device according to claim 3, wherein the reaction gas system is a mixed gas of selenium or sulfur and an inert gas.    
TW105139815A 2016-12-02 2016-12-02 Fluid uniform device TWI623052B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW105139815A TWI623052B (en) 2016-12-02 2016-12-02 Fluid uniform device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW105139815A TWI623052B (en) 2016-12-02 2016-12-02 Fluid uniform device

Publications (2)

Publication Number Publication Date
TWI623052B TWI623052B (en) 2018-05-01
TW201822291A true TW201822291A (en) 2018-06-16

Family

ID=62951665

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105139815A TWI623052B (en) 2016-12-02 2016-12-02 Fluid uniform device

Country Status (1)

Country Link
TW (1) TWI623052B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI728569B (en) 2019-11-25 2021-05-21 馗鼎奈米科技股份有限公司 Discharge polarization apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI498988B (en) * 2008-02-20 2015-09-01 Tokyo Electron Ltd A gas supply device, a film forming apparatus, and a film forming method
US9460944B2 (en) * 2014-07-02 2016-10-04 SCREEN Holdings Co., Ltd. Substrate treating apparatus and method of treating substrate

Also Published As

Publication number Publication date
TWI623052B (en) 2018-05-01

Similar Documents

Publication Publication Date Title
CN1737190B (en) Magnetic control sputtering device
CN102934197B (en) Be used to form the system and method for sputter material layer
CN102312212B (en) Scanning coating device and scan coating assembly
CN103469179B (en) A kind of inorganic gradient thin film preparation method under vacuum environment based on solution
CN102534491A (en) Preparation device and preparation method for absorbing layer of high conversion efficiency CIGS (Copper Indium Gallium Selenium) thin film solar cell
US20090243010A1 (en) Thinfilm deposition method, thinfilm deposition apparatus, and thinfilm semiconductor device
CN202246871U (en) Integrated vacuum coating equipment with multi-cavity star-type structure
CN201626981U (en) Gas inlet device of chemical vapor phase deposition epitaxy equipment
CN101583233A (en) Normal-pressure plasma device
CN1842612B (en) Film-forming apparatus and firm-forming method thereof
Felts et al. Commercial‐scale application of plasma processing for polymeric substrates: From laboratory to production
CN105671486B (en) A kind of preparation method of nitrogen-doped titanium dioxide thin-film material
TWI623052B (en) Fluid uniform device
TWI721940B (en) Apparatus and method for static deposition of material on a substrate
CN104451600A (en) Preparation method of bismuth oxide thin film material
CN110512194A (en) Star-like microwave plasma CVD device and the method for preparing large-area two-dimensional material
TW201504464A (en) Vapor dispensing apparatus and method for forming solar panel
Vieira et al. Multiphase titanium suboxides films grown on glass substrate: Surface energy, wettability and morphology analysis
CN208791745U (en) Equipment for coated substrates
CN102816999A (en) Selenium film deposition method and system and plasma head thereof
CN101838790A (en) Evaporation equipment
KR101227961B1 (en) Atmospheric Dielectric Barrier Discharge plasma ultra hydrophilicity coating apparatus using a liquid precursor
WO2016095975A1 (en) Apparatus and method for coating a substrate with a movable sputter assembly and control over process gas parameters
JP2018026594A (en) Plasma cvd device and plasma cvd method
US20180163296A1 (en) Equipment for producing film