TW201819848A - Multi-wavelength optical measurement device and measurement method ensuring that at any stage of film growth the measurement of warpage is effective - Google Patents
Multi-wavelength optical measurement device and measurement method ensuring that at any stage of film growth the measurement of warpage is effective Download PDFInfo
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本發明涉及半導體製造領域，尤其涉及一種用於測量半導體薄膜翹曲度的多波長光學測量裝置。The invention relates to the field of semiconductor manufacturing, in particular to a multi-wavelength optical measuring device for measuring the warpage of a semiconductor thin film.
在MOCVD（金屬有機化學氣相沉積Metal Organic Chemical Vapor Deposition）設備中進行沉積製程時，依序在半導體基板上沉積生長多層薄膜，而在薄膜生長過程中，由於應力的作用，會導致基板和薄膜發生翹曲，從而使得基板和薄膜的溫度分佈不均勻，影響產品的品質。尤其在生長某些關鍵薄膜層的時候，更加需要嚴格控制翹曲率，以降低溫度分佈不均勻對產品品質的影響。During the deposition process in a MOCVD (Metal Organic Chemical Vapor Deposition) device, a multilayer film is sequentially grown on a semiconductor substrate. During the film growth process, due to the stress, the substrate and the film will be grown. Warpage occurs, which makes the temperature distribution of the substrate and the film uneven, which affects the quality of the product. Especially when growing some key thin film layers, it is necessary to strictly control the warpage rate to reduce the impact of uneven temperature distribution on product quality.
一般來說，目前通常採用非接觸式的光學測量方法來檢測薄膜生長過程中的翹曲率，如第1圖所示，基板2放置在MOCVD反應腔體1中，光學測量裝置設置在反應腔外部，可以藉由反應腔體頂部的光學視窗101將鐳射光束入射到基板薄膜表面，光學測量裝置中，半透半反鏡4設置在鐳射器3的入射光路上，鐳射器3發射出的單波長鐳射透射穿過半透半反鏡4後，藉由光學視窗101入射到基板薄膜表面，位置敏感光電探測器5設置在半透半反鏡4的反射光路上，從基板薄膜表面反射的鐳射經過半透半反鏡4的反射後，進入位置敏感光電探測器5，位置敏感光電探測器5探測到鐳射的位移資訊，送入控制器6計算得到翹曲率，隨著基板2的旋轉，就可以測量得到基板薄膜上不同位置的翹曲率變化情況。Generally, non-contact optical measurement methods are currently used to detect the warpage rate during the film growth process. As shown in Figure 1, the substrate 2 is placed in the MOCVD reaction chamber 1, and the optical measurement device is set outside the reaction chamber. The laser beam can be incident on the surface of the substrate film through the optical window 101 on the top of the reaction chamber. In the optical measuring device, a half mirror 4 is arranged on the incident light path of the laser 3, and a single wavelength emitted by the laser 3 After the laser is transmitted through the half mirror 4, it is incident on the surface of the substrate film through the optical window 101. The position-sensitive photodetector 5 is disposed on the reflection light path of the half mirror 4, and the laser reflected from the surface of the substrate film passes through the half After reflection from the half mirror 4, it enters the position-sensitive photodetector 5. The position-sensitive photodetector 5 detects the displacement information of the laser beam and sends it to the controller 6 to calculate the warpage rate. As the substrate 2 rotates, it can measure Changes in warpage at different locations on the substrate film are obtained.
但是在實際測量過程中，單波長鐳射的反射率R與薄膜厚度d之間具有週期性變化規律，如第2圖所示，當薄膜生長到一定厚度後，反射率會逐步下降，當薄膜厚度進一步增加時，反射率又開始逐步上升，如此往復。對於在藍寶石基板上生長GaN薄膜的情況下，鐳射反射率並不會降低為0，但是如果是在矽基板上生長GaN薄膜或AlN薄膜的情況下，鐳射反射率則會降低為0。隨著薄膜沉積厚度的增加，當鐳射反射率降低到接近為0的時候，就會較難準確地測量翹曲率，而如果鐳射反射率完全為0的時候，則完全無法測量翹曲率，這會給製程帶來很大風險，無法控制基板溫度和成品率。However, in the actual measurement process, the reflectivity R of the single-wavelength laser and the film thickness d have a periodic change rule. As shown in Figure 2, when the film grows to a certain thickness, the reflectance will gradually decrease. When the film thickness When it is further increased, the reflectance starts to rise gradually again and again. When a GaN thin film is grown on a sapphire substrate, the laser reflectance is not reduced to 0, but when a GaN thin film or an AlN thin film is grown on a silicon substrate, the laser reflectance is reduced to 0. With the increase of the thickness of the thin film deposition, when the laser reflectance decreases to close to 0, it will be more difficult to accurately measure the warpage, and if the laser reflectance is completely 0, the warpage cannot be measured at all, which will give The manufacturing process brings great risks, and it is impossible to control the substrate temperature and yield.
本發明提供一種多波長光學測量裝置及其測量方法，利用多種波長的鐳射交替切換進行光學測量，始終保證正在進行檢測的鐳射的反射率具有較高值，由於確保了不同波長的鐳射的反射率不會同時接近0，從而確保了在薄膜生長的任何階段，對翹曲率的測量都是有效的。The invention provides a multi-wavelength optical measuring device and a measuring method thereof. Lasers with multiple wavelengths are alternately switched for optical measurement, and the reflectance of the laser being detected is always guaranteed to have a high value. The reflectance of lasers with different wavelengths is ensured. It does not approach zero at the same time, thus ensuring that the measurement of warpage is valid at any stage of film growth.
為了達到上述目的，本發明提供一種多波長光學測量裝置，其設置在MOCVD反應腔體外部，該多波長光學測量裝置包含：鐳射發生元件、光學元件、反射光接收元件、以及控制元件，所述的鐳射發生元件、光學元件和反射光接收元件設置的位置保證鐳射發生元件發射的鐳射經過光學元件後，藉由MOCVD反應腔體上的光學視窗入射到基板薄膜表面，並保證基板薄膜表面反射的鐳射被反射光接收元件接收並傳遞給控制組件以計算翹曲率。In order to achieve the above object, the present invention provides a multi-wavelength optical measurement device, which is disposed outside a MOCVD reaction chamber. The multi-wavelength optical measurement device includes a laser generating element, an optical element, a reflected light receiving element, and a control element. The position of the laser generating element, optical element and reflected light receiving element is set to ensure that after the laser emitted by the laser generating element passes through the optical element, it is incident on the substrate film surface through the optical window on the MOCVD reaction chamber, and the reflection of the substrate film surface is guaranteed. The laser light is received by the reflected light receiving element and passed to the control component to calculate the curvature.
所述的鐳射發生元件可以產生兩種以上的具有不同波長的鐳射，所述的不同波長的鐳射的反射率不會同時小於設定閾值；或者，所述的反射光接收元件可以識別兩種以上的具有不同波長的鐳射，所述的不同波長的鐳射的反射率不會同時小於設定閾值；所述的多波長光學測量裝置藉由切換不同波長的鐳射作為入射光源，始終保證當前波長的鐳射的當前反射率大於設定閾值。The laser generating element can generate more than two kinds of lasers with different wavelengths, and the reflectances of the lasers with different wavelengths cannot be less than a set threshold at the same time; or the reflected light receiving element can identify two or more kinds of lasers. Lasers with different wavelengths, the reflectance of the lasers of different wavelengths will not be less than the set threshold at the same time; the multi-wavelength optical measuring device switches the lasers of different wavelengths as the incident light source, and always guarantees the current laser of the current wavelength. The reflectivity is greater than the set threshold.
所述的不同波長之間的差距大於50nm。The difference between the different wavelengths is greater than 50 nm.
本發明提供一種多波長光學測量裝置，包含：鐳射發生元件、光學元件、反射光接收元件、以及控制元件；所述的鐳射發生元件包含：第一鐳射器、第二鐳射器；所述的光學元件包含：半透半反鏡、介質膜反射透射鏡；所述的反射光接收組件包含：位置敏感光電探測器；所述的控制組件包含：電性連接第一鐳射器和第二鐳射器的控制驅動電路，以及電性連接位置敏感光電探測器和控制驅動電路的控制器；The invention provides a multi-wavelength optical measurement device, including: a laser generating element, an optical element, a reflected light receiving element, and a control element; the laser generating element includes: a first laser, a second laser; and the optical The components include: a transflective mirror, a dielectric film reflective transmission mirror; the reflected light receiving component includes: a position-sensitive photodetector; and the control component includes: an electrical connection between the first laser and the second laser A control drive circuit, and a controller electrically connected to the position-sensitive photodetector and the control drive circuit;
半透半反鏡、介質膜反射透射鏡、第一鐳射器、第二鐳射器和位置敏感光電探測器組成光路，第一鐳射器發射具有第一波長的鐳射，第二鐳射器發射具有第二波長的鐳射，第一波長鐳射的反射率與第二波長鐳射的反射率不會同時小於設定閾值，介質膜反射透射鏡對第一波長的鐳射完全透射，對第二波長的鐳射完全反射，第一鐳射器發射的第一波長鐳射經過介質膜反射透射鏡的透射後，再經過半透半反鏡的透射，最終入射到基板薄膜表面，反射光經過半透半反鏡的反射，被位置敏感光電探測器接收，第二鐳射器發射的第二波長鐳射經過介質膜反射透射鏡的反射後，再經過半透半反鏡的透射，最終入射到基板薄膜表面，反射光經過半透半反鏡的反射，被位置敏感光電探測器接收，所述的位置敏感光電探測器探測鐳射位移資訊，控制器根據鐳射位移資訊計算翹曲率，位置敏感光電探測器同時探測鐳射反射率。The transflective mirror, the dielectric film reflective transmission mirror, the first laser, the second laser, and the position-sensitive photodetector form an optical path. The first laser emits a laser having a first wavelength, and the second laser emits a second laser. The wavelength of the laser, the reflectance of the first wavelength laser and the reflectance of the second wavelength laser will not be less than the set threshold at the same time. The dielectric film reflection and transmission mirror completely transmits the laser of the first wavelength and completely reflects the laser of the second wavelength. The first wavelength laser emitted by a laser beam is transmitted through a dielectric film reflection and transmission mirror, and then transmitted through a half mirror, and finally incident on the surface of a substrate film. The reflected light is reflected by the half mirror and is position sensitive. Received by the photodetector, the second wavelength laser emitted by the second laser is reflected by the dielectric film reflection and transmission mirror, and then transmitted through the half mirror, and finally incident on the substrate film surface, and the reflected light passes through the half mirror The reflection is received by the position-sensitive photodetector. The position-sensitive photodetector detects laser displacement information, and the controller according to the laser displacement information Warpage calculation, while detecting the position sensitive photodetector laser reflectance.
本發明還提供一種多波長光學測量裝置的測量方法，包含以下步驟：當第一鐳射器發射的第一波長鐳射的當前反射率小於設定閾值，則控制器發送指令給控制驅動電路，控制驅動電路切換鐳射器，關閉第一鐳射器，開啟第二鐳射器發射第二波長鐳射，當第二鐳射器發射的第二波長鐳射的當前反射率小於設定閾值，則控制器發送指令給控制驅動電路，控制驅動電路切換鐳射器，關閉第二鐳射器，開啟第一鐳射器發射第一波長鐳射。The invention also provides a measurement method of a multi-wavelength optical measuring device, comprising the following steps: when the current reflectance of the first wavelength laser emitted by the first laser is less than a set threshold, the controller sends an instruction to the control driving circuit to control the driving circuit Switch the laser, turn off the first laser, turn on the second laser to emit the second wavelength laser. When the current reflectance of the second wavelength laser emitted by the second laser is less than the set threshold, the controller sends an instruction to the control drive circuit. The driving circuit is controlled to switch the laser, turn off the second laser, and turn on the first laser to emit the first wavelength laser.
本發明還提供一種多波長光學測量裝置，包含：鐳射發生元件、光學元件、反射光接收元件、以及控制元件；所述的鐳射發生元件包含：鐳射器；所述的光學元件包含：半透半反鏡；所述的反射光接收組件包含：位置敏感光電探測器；所述的控制組件包含：電性連接鐳射器和位置敏感光電探測器的控制器；The present invention also provides a multi-wavelength optical measuring device, comprising: a laser generating element, an optical element, a reflected light receiving element, and a control element; the laser generating element includes: a laser; the optical element includes: a transflective A mirror; the reflected light receiving component includes: a position sensitive photodetector; the control component includes: a controller electrically connected to the laser and the position sensitive photodetector;
半透半反鏡、鐳射器和位置敏感光電探測器組成光路，鐳射器可以發射兩種以上波長的鐳射，不同波長鐳射的反射率不會同時小於設定閾值，鐳射器發射的不同波長的鐳射經過半透半反鏡的透射，最終入射到基板薄膜表面，反射光經過半透半反鏡的反射，被位置敏感光電探測器接收，所述的位置敏感光電探測器探測鐳射位移資訊，控制器根據鐳射位移資訊計算翹曲率，位置敏感光電探測器同時探測鐳射反射率。A transflective mirror, a laser, and a position-sensitive photodetector constitute an optical path. The laser can emit lasers of two or more wavelengths. The reflectivity of lasers of different wavelengths will not be less than a set threshold at the same time. Lasers of different wavelengths emitted by the laser pass through. The transmission of the transflective mirror is finally incident on the surface of the substrate film. The reflected light is reflected by the transflective mirror and received by the position-sensitive photodetector. The position-sensitive photodetector detects laser displacement information. The laser displacement information calculates the warpage rate, and the position sensitive photodetector detects the laser reflectance at the same time.
本發明還提供一種多波長光學測量裝置的測量方法，包含以下步驟：當鐳射器發射的當前波長的鐳射的當前反射率小於設定閾值，則控制器發送指令給鐳射器，鐳射器停止發射當前波長的鐳射，改為發射當前反射率大於設定閾值的另一種波長的鐳射。The invention also provides a measuring method of a multi-wavelength optical measuring device, comprising the following steps: when the current reflectance of the laser of the current wavelength emitted by the laser is less than a set threshold, the controller sends an instruction to the laser, and the laser stops transmitting the current wavelength , Instead of emitting a laser of another wavelength whose current reflectance is greater than a set threshold.
本發明還提供一種多波長光學測量裝置，包含：鐳射發生元件、光學元件、反射光接收元件、以及控制元件；所述的鐳射發生元件包含：鐳射器；所述的光學元件包含：半透半反鏡；所述的反射光接收組件包含：位置敏感光電探測器；所述的控制組件包含：電性連接位置敏感光電探測器的控制器。The present invention also provides a multi-wavelength optical measuring device, comprising: a laser generating element, an optical element, a reflected light receiving element, and a control element; the laser generating element includes: a laser; the optical element includes: a transflective A mirror; the reflected light receiving component includes: a position sensitive photodetector; and the control component includes: a controller electrically connected to the position sensitive photodetector.
半透半反鏡、鐳射器和位置敏感光電探測器組成光路，鐳射器發射全光譜鐳射，位置敏感光電探測器可以識別兩種以上波長的鐳射，不同波長鐳射的反射率不會同時小於設定閾值，鐳射器發射的全光譜鐳射經過半透半反鏡的透射，最終入射到基板薄膜表面，反射光經過半透半反鏡的反射，被位置敏感光電探測器接收，所述的位置敏感光電探測器探測鐳射位移資訊，控制器根據鐳射位移資訊計算翹曲率，位置敏感光電探測器同時探測鐳射反射率。The transflective mirror, laser, and position-sensitive photodetector form an optical path. The laser emits a full-spectrum laser. The position-sensitive photodetector can identify lasers with two or more wavelengths. The reflectivity of lasers with different wavelengths will not be less than the set threshold at the same time. The full-spectrum laser emitted by the laser beam is transmitted through the half mirror and finally incident on the surface of the substrate film. The reflected light is reflected by the half mirror and received by the position sensitive photodetector. The detector detects the laser displacement information, the controller calculates the warpage rate based on the laser displacement information, and the position-sensitive photoelectric detector detects the laser reflectance at the same time.
本發明還提供一種多波長光學測量裝置的測量方法，包含以下步驟：當位置敏感光電探測器探測到當前識別的鐳射的當前反射率小於設定閾值，則控制器發送指令給位置敏感光電探測器，位置敏感光電探測器停止識別當前波長的鐳射，改為識別當前反射率大於設定閾值的另一種波長的鐳射。The invention also provides a measurement method of a multi-wavelength optical measuring device, comprising the following steps: when the position sensitive photodetector detects that the current reflectance of the currently recognized laser is less than a set threshold, the controller sends an instruction to the position sensitive photodetector, The position-sensitive photodetector stops recognizing lasers of the current wavelength and instead recognizes lasers of another wavelength whose current reflectance is greater than a set threshold.
本發明利用多種波長的鐳射交替切換進行光學測量，始終保證正在進行檢測的鐳射的反射率具有較高值，由於確保了不同波長的鐳射的反射率不會同時接近0，從而確保了在薄膜生長的任何階段，對翹曲率的測量都是有效的。The present invention uses lasers of multiple wavelengths to alternately switch optical measurements to ensure that the reflectivity of the lasers being tested has a high value. It ensures that the reflectances of lasers of different wavelengths do not approach 0 at the same time, thereby ensuring the growth of thin films. At any stage, the measurement of warpage is valid.
以下根據第3圖至第7圖，具體說明本發明的較佳實施例。Hereinafter, preferred embodiments of the present invention will be described in detail based on FIGS. 3 to 7.
本發明提供一種多波長光學測量裝置，其設置在MOCVD反應腔體外部，該多波長光學測量裝置包含：鐳射發生元件、光學元件、反射光接收元件、以及控制元件，所述的鐳射發生元件、光學元件和反射光接收元件設置的位置保證鐳射發生元件發射的鐳射經過光學元件後，藉由MOCVD反應腔體上的光學視窗入射到基板薄膜表面，並保證基板薄膜表面反射的鐳射被反射光接收元件接收並傳遞給控制組件以計算翹曲率。The invention provides a multi-wavelength optical measurement device, which is disposed outside a MOCVD reaction chamber. The multi-wavelength optical measurement device includes a laser generating element, an optical element, a reflected light receiving element, and a control element. The laser generating element, The positions of the optical element and the reflected light receiving element ensure that after the laser emitted by the laser generating element passes through the optical element, it is incident on the surface of the substrate film through the optical window on the MOCVD reaction chamber, and ensures that the reflected laser light on the substrate film surface is received by the reflected light. The element is received and passed to the control assembly to calculate the curvature.
所述的鐳射發生元件可以產生兩種以上的具有不同波長的鐳射，所述的不同波長的鐳射的反射率不會同時接近0；或者，所述的反射光接收元件可以識別兩種以上的具有不同波長的鐳射，所述的不同波長的鐳射的反射率不會同時接近0。如第3圖所示，在本發明的一個實施例中，可以選擇兩種具有不同波長的鐳射，波長1的鐳射的反射率和波長2的鐳射的反射率不會同時接近0，藉由對鐳射波長的合理選擇，可以保證波長1的鐳射的反射率處於波谷時，波長2的鐳射的反射率正處於波峰。The laser generating element can generate more than two kinds of lasers with different wavelengths, and the reflectance of the lasers with different wavelengths will not approach 0 at the same time; or the reflected light receiving element can identify two or more For lasers of different wavelengths, the reflectivity of the lasers of different wavelengths will not approach 0 at the same time. As shown in FIG. 3, in one embodiment of the present invention, two kinds of lasers having different wavelengths can be selected. The reflectance of the laser of wavelength 1 and the reflectance of laser of wavelength 2 will not approach 0 at the same time. The reasonable selection of the laser wavelength can ensure that when the reflectance of the laser at the wavelength 1 is in the trough, the reflectance of the laser at the wavelength 2 is at the peak.
所述的多波長光學測量裝置根據對不同波長鐳射的反射率的判斷，選擇反射率處於較高值處的鐳射來檢測基板薄膜的翹曲率，根據不同波長鐳射的反射率的變化，不斷轉換不同波長鐳射作為入射光源，始終保證正在進行檢測的鐳射的反射率具有較高值。The multi-wavelength optical measurement device selects a laser having a higher reflectance at a higher value to detect the warpage of the substrate film according to the judgment of the reflectance of lasers with different wavelengths, and continuously converts different values according to the change of the reflectance of lasers with different wavelengths. The wavelength laser is used as the incident light source to ensure that the reflectance of the laser being tested has a high value.
如第4圖所示，在本發明的一個實施例中，提供一種多波長光學測量裝置，其設置在MOCVD反應腔體1外部，包含：鐳射發生元件、光學元件、反射光接收元件、以及控制元件；所述的鐳射發生元件包含：第一鐳射器9、第二鐳射器10；所述的光學元件包含：半透半反鏡7、介質膜反射透射鏡8；所述的鐳射接收元件包含：位置敏感光電探測器11；所述的控制組件包含：電性連接第一鐳射器9和第二鐳射器10的控制驅動電路12，以及電性連接位置敏感光電探測器11和控制驅動電路12的控制器13。As shown in FIG. 4, in one embodiment of the present invention, a multi-wavelength optical measurement device is provided, which is disposed outside the MOCVD reaction chamber 1 and includes a laser generating element, an optical element, a reflected light receiving element, and a control. Element; the laser generating element includes: a first laser 9 and a second laser 10; the optical element includes: a semi-transparent mirror 7 and a dielectric film reflection transmitting mirror 8; the laser receiving element includes : Position-sensitive photodetector 11; the control component includes: a control driving circuit 12 electrically connected to the first laser 9 and the second laser 10, and a position-sensitive photodetector 11 and a control driving circuit 12 to be electrically connected Controller 13.
半透半反鏡7、介質膜反射透射鏡8、第一鐳射器9、第二鐳射器10和位置敏感光電探測器11組成光路，第一鐳射器9發射具有第一波長的鐳射，第二鐳射器發射具有第二波長的鐳射，第一波長與第二波長之間的差距大於50nm（較佳地，第一波長與第二波長之間的差距大於200nm），使得第一波長鐳射的反射率與第二波長鐳射的反射率不會同時小於設定閾值，介質膜反射透射鏡8對第一波長的鐳射完全透射，對第二波長的鐳射完全反射，第一鐳射器9發射的第一波長鐳射經過介質膜反射透射鏡8的透射後，再經過半透半反鏡7的透射，藉由反應腔體頂部的光學視窗101最終入射到基板薄膜2表面，反射光經過半透半反鏡7的反射，被位置敏感光電探測器11接收，第二鐳射器10發射的第二波長鐳射經過介質膜反射透射鏡8的反射後，再經過半透半反鏡7的透射，藉由反應腔體頂部的光學視窗101最終入射到基板薄膜2表面，反射光經過半透半反鏡7的反射，被位置敏感光電探測器11接收，所述的位置敏感光電探測器11探測鐳射位移資訊，控制器13根據鐳射位移資訊計算翹曲率，位置敏感光電探測器11同時探測鐳射反射率。The transflective mirror 7, the dielectric film reflective transmission mirror 8, the first laser 9, the second laser 10, and the position-sensitive photodetector 11 form an optical path. The first laser 9 emits a laser having a first wavelength, and the second The laser emits a laser having a second wavelength, and the difference between the first and second wavelengths is greater than 50 nm (preferably, the difference between the first and second wavelengths is greater than 200 nm), so that the reflection of the first wavelength laser is And the reflectivity of the second wavelength laser will not be less than the set threshold at the same time. The dielectric film reflection and transmission mirror 8 completely transmits the laser of the first wavelength and completely reflects the laser of the second wavelength. The first wavelength emitted by the first laser 9 After the laser beam is transmitted through the dielectric reflection mirror 8 and then transmitted through the transflective mirror 7, the optical window 101 on the top of the reaction chamber finally enters the surface of the substrate film 2 and the reflected light passes through the transflective mirror 7 The reflected light is received by the position-sensitive photodetector 11. The second wavelength laser emitted by the second laser 10 is reflected by the dielectric reflection mirror 8 and then transmitted by the half mirror 7 through the reaction cavity. The final optical window 101 is finally incident on the surface of the substrate film 2. The reflected light is reflected by the half mirror 7 and received by the position sensitive photodetector 11. The position sensitive photodetector 11 detects laser displacement information. The controller 13 The warpage rate is calculated based on the laser displacement information, and the position sensitive photodetector 11 detects the laser reflectance at the same time.
本實施例中還提供一種多波長光學測量裝置的測量方法，包含以下步驟：當第一鐳射器9發射的第一波長鐳射的當前反射率小於設定閾值，則控制器13發送指令給控制驅動電路12，控制驅動電路12切換鐳射器，關閉第一鐳射器9，開啟第二鐳射器10發射第二波長鐳射，當第二鐳射器10發射的第二波長鐳射的當前反射率小於設定閾值，則控制器13發送指令給控制驅動電路12，控制驅動電路12切換鐳射器，關閉第二鐳射器10，開啟第一鐳射器9發射第一波長鐳射。所述的反射率的設定閾值為最高值的2%。This embodiment also provides a measurement method of a multi-wavelength optical measurement device, including the following steps: When the current reflectance of the first wavelength laser emitted by the first laser 9 is less than a set threshold, the controller 13 sends an instruction to the control driving circuit 12. Control the drive circuit 12 to switch the laser, turn off the first laser 9 and turn on the second laser 10 to emit a second wavelength laser. When the current reflectance of the second wavelength laser emitted by the second laser 10 is less than a set threshold, then The controller 13 sends an instruction to the control driving circuit 12 to control the driving circuit 12 to switch the laser, turn off the second laser 10, and turn on the first laser 9 to emit a first wavelength laser. The set threshold of the reflectance is 2% of the highest value.
本實施例中，採用兩種不同波長的鐳射交替檢測，由於確保了兩種不同波長的鐳射的反射率不會同時接近0，從而確保了在薄膜生長的任何階段，對翹曲率的測量都是有效的。In this embodiment, two types of lasers with different wavelengths are used for alternate detection. Since it is ensured that the reflectance of lasers with two different wavelengths does not approach 0 at the same time, it is ensured that the measurement of warpage at any stage of film growth is Effective.
如第5圖所示，在本發明的另一個實施例中，提供一種多波長光學測量裝置，其設置在MOCVD反應腔體1外部，包含：鐳射發生元件、光學元件、反射光接收元件、以及控制元件；所述的鐳射發生元件包含：鐳射器15；所述的光學元件包含：半透半反鏡14；所述的反射光接收組件包含：位置敏感光電探測器16；所述的控制組件包含：電性連接鐳射器15和位置敏感光電探測器16的控制器17。As shown in FIG. 5, in another embodiment of the present invention, a multi-wavelength optical measurement device is provided, which is disposed outside the MOCVD reaction chamber 1 and includes a laser generating element, an optical element, a reflected light receiving element, and The control element; the laser generating element includes: a laser 15; the optical element includes: a half mirror 14; the reflected light receiving component includes: a position sensitive photodetector 16; the control component Including: a controller 17 electrically connected to the laser 15 and the position sensitive photodetector 16.
半透半反鏡14、鐳射器15和位置敏感光電探測器16組成光路，鐳射器可以發射兩種以上波長的鐳射，兩種波長之間的差距大於50nm（較佳地，兩種波長之間的差距大於200nm），使得不同波長鐳射的反射率不會同時小於設定閾值，鐳射器15發射的不同波長的鐳射經過半透半反鏡14的透射，藉由反應腔體頂部的光學視窗101最終入射到基板薄膜2表面，反射光經過半透半反鏡14的反射，被位置敏感光電探測器16接收，所述的位置敏感光電探測器16探測鐳射位移資訊，控制器17根據鐳射位移資訊計算翹曲率，位置敏感光電探測器16同時探測鐳射反射率。The transflective mirror 14, the laser 15, and the position-sensitive photodetector 16 form an optical path. The laser can emit lasers of two or more wavelengths. The difference between the two wavelengths is greater than 50 nm (preferably, between the two wavelengths). (The gap is greater than 200nm), so that the reflectivity of lasers of different wavelengths will not be less than the set threshold at the same time. Lasers of different wavelengths emitted by the laser 15 are transmitted through the transflective mirror 14 and finally through the optical window 101 on the top of the reaction chamber. When incident on the surface of the substrate film 2, the reflected light is reflected by the half mirror 14 and received by the position sensitive photodetector 16. The position sensitive photodetector 16 detects laser displacement information, and the controller 17 calculates the laser displacement information. The warpage, position-sensitive photodetector 16 detects the laser reflectivity at the same time.
本實施例中還提供一種多波長光學測量裝置的測量方法，包含以下步驟：當鐳射器15發射的當前波長的鐳射的當前反射率小於設定閾值，則控制器17發送指令給鐳射器15，鐳射器15停止發射當前波長的鐳射，改為發射當前反射率大於設定閾值的另一種波長的鐳射。所述的反射率的設定閾值為最高值的2%。This embodiment also provides a measurement method of a multi-wavelength optical measuring device, including the following steps: When the current reflectance of the laser of the current wavelength emitted by the laser 15 is less than a set threshold, the controller 17 sends an instruction to the laser 15, the laser The device 15 stops emitting lasers of the current wavelength and emits lasers of another wavelength whose current reflectivity is greater than a set threshold. The set threshold of the reflectance is 2% of the highest value.
本實施例中，同一光源發出不同波長的鐳射，由於確保了不同波長的鐳射的反射率不會同時接近0，從而確保了在薄膜生長的任何階段，對翹曲率的測量都是有效的。In this embodiment, the same light source emits lasers of different wavelengths, and it is ensured that the reflectivity of lasers of different wavelengths does not approach 0 at the same time, thereby ensuring that the measurement of the curvature is effective at any stage of film growth.
如第6圖所示，在本發明的另一個實施例中，提供一種多波長光學測量裝置，其設置在MOCVD反應腔體1外部，包含：鐳射發生元件、光學元件、反射光接收元件、以及控制元件；所述的鐳射發生元件包含：鐳射器20；所述的光學元件包含：半透半反鏡19；所述的反射光接收組件包含：位置敏感光電探測器21；所述的控制組件包含：電性連接位置敏感光電探測器21的控制器22。As shown in FIG. 6, in another embodiment of the present invention, a multi-wavelength optical measurement device is provided, which is disposed outside the MOCVD reaction chamber 1 and includes a laser generating element, an optical element, a reflected light receiving element, and The control element; the laser generating element includes: a laser 20; the optical element includes: a half mirror 19; the reflected light receiving component includes: a position sensitive photodetector 21; and the control component Including: a controller 22 electrically connected to the position-sensitive photodetector 21.
半透半反鏡19、鐳射器20和位置敏感光電探測器21組成光路，鐳射器20發射全光譜鐳射，位置敏感光電探測器21可以識別兩種以上波長的鐳射，兩種波長之間的差距大於50nm（較佳地，兩種波長之間的差距大於200nm），使得不同波長鐳射的反射率不會同時小於設定閾值，鐳射器20發射的全光譜鐳射經過半透半反鏡19的透射，藉由反應腔體頂部的光學視窗101最終入射到基板薄膜2表面，反射光經過半透半反鏡19的反射，被位置敏感光電探測器21接收，所述的位置敏感光電探測器21探測鐳射位移資訊，控制器22根據鐳射位移資訊計算翹曲率，位置敏感光電探測器21同時探測鐳射反射率。The transflective mirror 19, the laser 20, and the position-sensitive photodetector 21 form an optical path. The laser 20 emits a full-spectrum laser. The position-sensitive photodetector 21 can identify lasers of two or more wavelengths, and the difference between the two wavelengths. Greater than 50nm (preferably, the difference between the two wavelengths is greater than 200nm), so that the reflectivity of lasers of different wavelengths will not be less than a set threshold at the same time, the full-spectrum laser emitted by the laser 20 passes through the transflective mirror 19, The optical window 101 at the top of the reaction chamber is finally incident on the surface of the substrate film 2. The reflected light is reflected by the half mirror 19 and received by the position sensitive photodetector 21, which detects the laser light. For the displacement information, the controller 22 calculates the warpage rate based on the laser displacement information, and the position sensitive photodetector 21 detects the laser reflectivity at the same time.
本實施例中還提供一種多波長光學測量裝置的測量方法，包含以下步驟：當位置敏感光電探測器21探測到當前識別的鐳射的當前反射率小於設定閾值，則控制器22發送指令給位置敏感光電探測器21，位置敏感光電探測器21停止識別當前波長的鐳射，改為識別當前反射率大於設定閾值的另一種波長的鐳射。所述的反射率的設定閾值為最高值的2%。This embodiment also provides a measurement method of a multi-wavelength optical measurement device, including the following steps: When the position-sensitive photodetector 21 detects that the current reflectance of the currently recognized laser is less than a set threshold, the controller 22 sends an instruction to the position-sensitive The photodetector 21 and the position-sensitive photodetector 21 stop recognizing lasers of the current wavelength and instead recognize lasers of another wavelength whose current reflectance is greater than a set threshold. The set threshold of the reflectance is 2% of the highest value.
本實施例中，位置敏感光電探測器可以識別全光譜中多種波長的鐳射，由於確保了不同波長的鐳射的反射率不會同時接近0，從而確保了在薄膜生長的任何階段，對翹曲率的測量都是有效的。In this embodiment, the position-sensitive photodetector can recognize lasers with multiple wavelengths in the full spectrum. It is ensured that the reflectivity of lasers with different wavelengths will not be close to 0 at the same time, thereby ensuring that the warpage rate at any stage of film growth The measurements are valid.
在本發明的實施例中，所述的位置敏感光電探測器可以採用矩陣式的位置敏感光電探測器，但是需要逐個掃描大量光電探測單元以獲得每個單元對應的電信號，不僅成本高而且回應速度慢。所述的位置敏感光電探測器還可以採用光電二極體，如第7圖所示，在該光電二極體中，受到光照的地方（反射光斑）會產生電流（原理與太陽能發電板類似，只是位置精度高，輸出電極設計不同），受光照區域到四個輸出電極的距離不同導致電阻也不同，因此產生的電流分配到不同輸出電極的電流大小也不同，根據四個電極上的電流大小可以推導出光照區域到各個電極的距離，也就可以知道光照區域的位置。In the embodiment of the present invention, the position-sensitive photodetector may be a matrix-type position-sensitive photodetector, but a large number of photodetection units need to be scanned one by one to obtain the electrical signal corresponding to each unit, which is not only costly but also responds. Slow. The position-sensitive photodetector may also use a photodiode. As shown in FIG. 7, in the photodiode, an electric current is generated in a place where the light is received (reflected light spot) (the principle is similar to that of a solar power panel, Only the position accuracy is high, the output electrode design is different), the distance from the illuminated area to the four output electrodes results in different resistances, so the current generated by the different output electrodes is also different, according to the current on the four electrodes The distance from the illuminated area to each electrode can be deduced, and the position of the illuminated area can be known.
本發明利用多種波長的鐳射交替切換進行光學測量，始終保證正在進行檢測的鐳射的反射率具有較高值，由於確保了不同波長的鐳射的反射率不會同時接近0，從而確保了在薄膜生長的任何階段，對翹曲率的測量都是有效的。The present invention uses lasers of multiple wavelengths to alternately switch optical measurements to ensure that the reflectivity of the lasers being tested has a high value. It ensures that the reflectances of lasers of different wavelengths do not approach 0 at the same time, thereby ensuring the growth of thin films. At any stage, the measurement of warpage is valid.
儘管本發明的內容已經藉由上述較佳實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本領域技術人員閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above-mentioned preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Various modifications and alternatives to the present invention will be apparent to those skilled in the art after reading the foregoing. Therefore, the protection scope of the present invention should be defined by the scope of the attached patent application.
1‧‧‧反應腔體1‧‧‧ reaction chamber
2‧‧‧基板2‧‧‧ substrate
3、15、20‧‧‧鐳射器3, 15, 20‧‧‧ laser
4、7、14、19‧‧‧半透半反鏡4, 7, 14, 19 ‧ ‧ ‧ transflective mirror
5、11、16、21‧‧‧位置敏感光電探測器5, 11, 16, 21‧‧‧ Position-sensitive photodetectors
6‧‧‧控制器6‧‧‧controller
8‧‧‧介質膜反射透射鏡8‧‧‧ Dielectric film reflection transmission mirror
9‧‧‧第一鐳射器9‧‧‧The first laser
10‧‧‧第二鐳射器10‧‧‧Second Laser
12‧‧‧控制驅動電路12‧‧‧Control drive circuit
13、17、22‧‧‧控制器13, 17, 22‧‧‧ controller
101‧‧‧光學視窗101‧‧‧optical window
第1圖是背景技術中光學測量裝置的結構示意圖。FIG. 1 is a schematic structural diagram of an optical measurement device in the background art.
第2圖是單波長鐳射的反射率曲線圖。Figure 2 is a graph of the reflectance of a single wavelength laser.
第3圖是不同波長鐳射的反射率曲線圖。Figure 3 is a graph of the reflectance of lasers with different wavelengths.
第4圖是本發明一個實施例中提供的一種多波長光學測量裝置的結構示意圖。FIG. 4 is a schematic structural diagram of a multi-wavelength optical measurement device provided in an embodiment of the present invention.
第5圖是本發明另一個實施例中提供的一種多波長光學測量裝置的結構示意圖。FIG. 5 is a schematic structural diagram of a multi-wavelength optical measurement device provided in another embodiment of the present invention.
第6圖是本發明另一個實施例中提供的一種多波長光學測量裝置的結構示意圖。FIG. 6 is a schematic structural diagram of a multi-wavelength optical measurement device provided in another embodiment of the present invention.
第7圖是光電二極體的示意圖。Figure 7 is a schematic diagram of a photodiode.
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| JPS5719607A (en) * | 1980-07-10 | 1982-02-01 | Mitsubishi Electric Corp | Device for measuring thickness of dielectric film |
| JPS61237005A (en) * | 1985-04-13 | 1986-10-22 | Matsushita Electric Works Ltd | Detector for wrapage of substrate |
| US5248889A (en) * | 1990-08-14 | 1993-09-28 | Tencor Instruments, Inc. | Laser apparatus and method for measuring stress in a thin film using multiple wavelengths |
| US5523582A (en) * | 1992-04-30 | 1996-06-04 | Ann F. Koo | Method and apparatus for measuring the curvature of wafers with a laser source selecting device |
| US6031615A (en) * | 1997-09-22 | 2000-02-29 | Candela Instruments | System and method for simultaneously measuring lubricant thickness and degradation, thin film thickness and wear, and surface roughness |
| US7570368B2 (en) * | 2004-05-12 | 2009-08-04 | Veeco Instruments Inc. | Method and apparatus for measuring the curvature of reflective surfaces |
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| CN100451608C (en) * | 2006-03-30 | 2009-01-14 | 西安电子科技大学 | Optical sensor for thin film detection |
| CN101515558A (en) * | 2006-03-30 | 2009-08-26 | 西安电子科技大学 | Method for on-line detection of film growth rate and stress |
| KR100947464B1 (en) * | 2008-02-13 | 2010-03-17 | 에스엔유 프리시젼 주식회사 | Apparatus for measuring thickness |
| CN201345006Y (en) * | 2009-01-09 | 2009-11-11 | 嘉兴大合激光设备有限公司 | High-power semiconductor laser beam composite device |
| CN102299473A (en) * | 2011-06-24 | 2011-12-28 | 天津奇谱光电技术有限公司 | Extensible combined system with a plurality of lasers |
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