TW201819645A - 用於電子互連的先進焊料合金 - Google Patents

用於電子互連的先進焊料合金 Download PDF

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Publication number
TW201819645A
TW201819645A TW106133550A TW106133550A TW201819645A TW 201819645 A TW201819645 A TW 201819645A TW 106133550 A TW106133550 A TW 106133550A TW 106133550 A TW106133550 A TW 106133550A TW 201819645 A TW201819645 A TW 201819645A
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weight percent
alloy
less
solder
solder alloy
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TW106133550A
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TWI650426B (zh
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摩加納迪奧維拉 瑞巴斯
普瑞薩 喬德胡瑞
西尤里 沙卡
朗吉特 潘德
尼可拉斯Ｇ 荷瑞克
艾密特 帕托
拉芬德拉Ｍ 巴特卡
巴瓦 辛
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美商阿爾發裝配對策公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/002—Soldering by means of induction heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
    • B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/08—Soldering by means of dipping in molten solder
    • B23K1/085—Wave soldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
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Abstract

本發明在焊料合金中使用微添加劑，來設計焊料合金的電及熱性質、及焊料與金屬表面之間反應層的性質，而得到一種電及熱性質改良之焊料合金。合金及焊料與金屬表面之間反應層的導電度及導熱度可在廣泛的溫度範圍內受控制。該焊料合金製造安定的微結構，其中在改變溫度時，這些合金之此安定微結構相較於傳統互連材料不呈現顯著變化。

Description

用於電子互連的先進焊料合金
本發明大致關於一種改良用於LED/功率半導體晶元黏結及組件黏結之焊料合金的電及熱性質之方法。
電子業中有極多已知的焊接技術。波焊法為廣泛用於大量焊接電子組合件之方法。其可用於例如通孔電路板，其中該板通過衝擊板底部而濕潤欲結合的金屬表面之熔融焊料波。
另一種焊接技術涉及將焊糊印刷在印刷電路板之焊墊上，繼而將全部組合件安置及傳送通過迴焊爐。在迴焊方法期間，焊料熔化且濕潤板上及組件上的焊接表面。
另一種焊接方法涉及將印刷電路板浸入熔融焊料中，而將銅端子塗以可焊接及保護層。此焊料施加方法已知為熱風調平，及後續的焊接方法已知為墊上焊料。
球柵陣列接頭或晶片尺寸封裝一般組合2個 基板之間的焊料球。這些接頭陣列被用於將晶片安裝在電路板上。
現在對於適合用於波焊法、SMT(表面黏著技術)、晶元黏結、及球柵陣列之焊料合金有許多要求。最重要為，該合金關於許多基板材料，如銅、鎳、磷化鎳(「無電鍍鎳」)、銀、及銅-OSP(有機焊接力保護劑)，必須呈現良好的濕潤特徵。
焊料合金趨於溶解基板，及在與基板之界面處形成介金屬化合物。例如焊料合金中的錫可在界面處與基板反應形成介金屬化合物(IMC)層。如果基板為銅，則會形成Cu6Sn5層。此層一般厚度為零點幾微米至數微米之間。在此層與銅基板之間的界面處會有Cu3Sn之IMC。該界面介金屬層趨於在老化期間生長，尤其是在較高溫度。較厚的介金屬層連同可能發生的任何孔隙會進一步促進受應力接頭之早熟破裂。
其他重要的因素為：(i)合金本身中有介金屬，其造成機械性質改良；(ii)抗氧化性，其在焊球、預形體、與粉末等之中為重要的，其中儲存期間或重複迴焊期間的劣化可能造成焊接性能比理想低；(iii)除渣率；及(iv)合金安定性。這些後者考量對於將合金長時間保持在槽或浴中，或使形成的焊料接頭長時間接受高操作溫度之應用為重要的。
為了環境及健康原因，現在越來越需要以無鉛及無銻代替含鉛及含銻的習知合金。許多習知的焊料合金係基於錫-銅共熔組成物：Sn-0.7重量百分比之Cu。 例如電子界現已接受以錫-銀-銅系統作為焊接材料的無鉛替代方案。一種特定合金共熔合金SnAg3.0Cu0.5呈現優於Sn-Pb焊料材料的疲乏時限，同時維持約217至219℃之相當低熔點。
在某些領域，如汽車業、高功率電子界、及能源界，包括例如LED照明，希望在高溫操作焊料合金，例如150℃或以上。SnAg3.0Cu0.5合金在此溫度表現不佳。
用於晶元黏結及其他電互連之焊料表現多種功能，如提供將零件接合在一起的機械強度，提供電流路徑，或提供熱界面作為在裝置中產生的熱散逸到散熱器之路程。焊料材料之物理性質，如導熱度、導電度、拉伸強度、剪切強度、潛變、及其與裝置及電路板形成良好界面的能力，為其在實際生活應用中決定整體性能的重要因素。這些性質亦必須在典型操作條件下隨時間經過仍安定。
電子裝置，尤其是高功率裝置(如LED與高功率放大器)及開關等，產生必須散逸之大量熱。在此裝置的操作期間，熱及電界面材料遭遇長時間的高溫。在高溫操作期間，由於裝置、基板、與互連材料之間的熱膨脹係數(CTE)失配，互連材料亦面對高機械應力。因此，為了使裝置能長時間操作，互連材料及界面在這些條件下應具有安定的機械、熱、及電性質。
金屬及合金中的熱能量主要由電子傳輸。通常金屬及合金顯示導熱度隨溫度上升而降低。其通常為 許多因素組合的結果，如電子-電子散射，電子-原子散射，及在合金內及界面處電子從晶粒邊緣散射。導電度變化為不欲的。金屬及合金之電阻率亦會隨溫度上升而改變。焊料合金中的電阻率變化亦為不欲的。
本發明尋求改正至少某些先行技藝帶有的問題，及對現有焊料合金提供商業可接受的替代性解答。
依照本發明之一個或以上的態樣，使用微添加劑組合調整焊料微結構，藉此影響焊料合金的性質。
本發明之一目的為提供一種電性質改良之焊料合金。
本發明之一目的為提供一種熱性質改良之焊料合金。
本發明之一目的為提供一種疲乏時限改良之焊料合金。
本發明之另一目的為在LED晶元黏結層中提供低接觸電阻。
本發明之另一目的為在操作及老化期間對晶元黏結層提供極小到無改變的接觸電阻。
本發明之一目的為使LED或任何其他的高功率電子裝置在高功率操作時的效率更高。
關於此點，在一具體實施例中，本發明大致關於一種包含以下之無鉛、無銻焊料合金：
(a)10重量百分比或以下的銀
(b)10重量百分比或以下的鉍
(c)3重量百分比或以下的銅
(d)至少一種以下元素至多1重量百分比之鎳至多1重量百分比之鈦至多1重量百分比之鈷至多3.5重量百分比之銦至多1重量百分比之鋅至多1重量百分比之鈰
(e)視情況之一種或以上的以下元素0至1重量百分比之錳0至1重量百分比之鉻0至1重量百分比之鍺0至1重量百分比之鐵0至1重量百分比之鋁0至1重量百分比之磷0至1重量百分比之金0至1重量百分比之鎵0至1重量百分比之碲0至1重量百分比之硒0至1重量百分比之鈣0至1重量百分比之釩0至1重量百分比之鉬0至1重量百分比之鉑0至1重量百分比之鎂0至1重量百分比之稀土
(f)其餘為錫，連同任何無法避免的雜質。
在另一較佳具體實施例中，本發明關於一種焊接接頭，其包括包含以下之無鉛、無銻焊料合金：
(a)10重量百分比或以下的銀
(b)10重量百分比或以下的鉍
(c)3重量百分比或以下的銅
(d)至少一種以下元素至多1重量百分比之鎳至多1重量百分比之鈦至多1重量百分比之鈷至多3.5重量百分比之銦至多1重量百分比之鋅至多1重量百分比之鈰
(e)視情況之一種或以上的以下元素0至1重量百分比之錳0至1重量百分比之鉻0至1重量百分比之鍺0至1重量百分比之鐵0至1重量百分比之鋁0至1重量百分比之磷0至1重量百分比之金0至1重量百分比之鎵0至1重量百分比之碲0至1重量百分比之硒0至1重量百分比之鈣 0至1重量百分比之釩0至1重量百分比之鉬0至1重量百分比之鉑0至1重量百分比之鎂0至1重量百分比之稀土
(f)其餘為錫，連同任何無法避免的雜質。
在又另一較佳具體實施例中，本發明關於一種焊接方法，該方法的步驟包含：a)將焊料合金施加於基板，其中該焊料為無鉛、或無鉛無銻焊料合金；其中該焊料可藉波焊法、表面黏著技術(SMT)焊法、晶元黏結焊法、熱界面焊法、人工焊法、雷射與RF誘發焊法、重工焊法、積層、及其組合。
第1圖顯示高溫儲存對介金屬厚度的影響。
第2圖顯示導熱度及介金屬在高溫儲存期間的演變。
第3圖顯示電阻率及介金屬在高溫儲存期間的演變。
第4圖顯示常用的無Pb焊料合金SAC305、及2種新穎焊料合金的導熱度對溫度的依附性。
第5圖顯示常用的無Pb焊料合金SAC305、及新穎焊料合金A的體電阻對溫度的依附性。
第6圖顯示組合SAC305、合金A、與合金B之LED的光通量為驅動電功率的函數。此為已焊接LED在任 何老化或溫度循環之前的最初性能。
第7圖顯示組合SAC305、合金A、與合金B之LED的光通量為驅動電功率的函數。其顯示LED在1500次溫度循環之後的性能。
第8圖顯示3組LED在各種驅動電流下在1500次溫度循環之後的發光效能。
第9圖顯示LED在0.2安培之驅動電流下的光通量為溫度循環的函數。該LED係組合SAC305、合金A、與合金B。
第10圖顯示LED在0.2安培之驅動電流下的正規化光通量為溫度循環的函數。該LED係組合SAC305、合金A、與合金B。
第11圖顯示組合SAC305、合金A、與合金B之3組LED在溫度循環下的效能變化。
第12圖顯示組合SAC305、合金A、與合金B之LED經過1500次循環的相關色溫(CCT)。CCT係在0.2安培之驅動電流下記錄。
本發明關於焊料合金之微量添加物，以設計用於製造電子組件及裝置、以及電子組合件及封裝的電及熱性質。
除了晶元黏結層的熱疲乏時限改良，新穎焊料合金的電性質亦改良。本發明造成晶元黏結層中的接觸電阻較低，晶元黏結層之操作及老化期間的接觸電阻變化較小，及LED效率較高，尤其是在高功率操作期間。
相較於SAC合金，焊料合金中更精細的IMC粒子之設計微結構可使粒子分布更均勻。較小的整體IMC及其均勻分布減少IMC與聯接層之間介面處的電子散射。
該設計微結構可在高溫操作及溫度循環期間使整體IMC生長較緩慢，界面IMC受控制，及微結構中變化較緩慢。當將本發明之焊料合金用於晶元黏結LED時，如此導致LED在其壽命中性能之變化或降級非常小。
該新穎的焊料合金造成電阻對溫度的依附係數較小。該合金另外造成有效熱阻及有效導熱度之溫度依附係數較小。電阻及有效熱阻/導熱度之溫度依附係數較小，造成LED的光學功率、波長、及效率之偏移較小。
焊料合金之製備包括強化固態溶液，其中藉由添加溶解度限度內的元素而將晶格扭曲。本發明之態樣可進一步包含如精製晶粒、強化沉澱、及添加擴散調節劑之方法。其可設計焊料合金組成物使得界面介金屬造成導熱度及導電度性能整體改良。
本發明包括一系列互連材料組成物，其包括製造安定微結構之焊料合金組成物。這些安定的微結構組成物在使用時不呈現顯著的變化(隨時間經過、操作溫度範圍、熱循環體系、及功率負載等)。比較傳統互連材料(如SAC305)，評估微結構性質(如晶粒大小、IMC厚度、潛變性質(應力-應變遲滯特徵等)、及焊料合金)之主要度量仍保持相當固定。
安定的微結構呈現安定的熱及電性質，如安 定的電阻值。安定的電阻值使輸出變數之變動最小，且產生安定的輸出，如隨時間經過仍持續的電效率。其對於用於功率轉換裝置為重要的。此電效率的一實例為隨時間經過的光衰最小之持續光輸出(在LED及雷射二極體的情形)。
本發明使用焊料合金的微量添加物組合，來設計整體焊料微結構。這些添加物太少，故其對焊料熔化行為無顯著影響，但對其他性質可有顯著影響。其使用固態溶液強化、晶粒精製、沉澱強化、與擴散調節劑的組合，來設計新穎的合金。
在固態溶液強化中，晶格由於添加溶解度限度內的合金元素而扭曲。此晶格扭曲產生與材料中存在的錯位(dislocation)交互作用之應力場。阻抗錯位移動造成強化而防止塑性變形。因此，將如Bi與Sb之元素以至多到形成新相的限度加入基於Sn之基質會強化合金微結構。由於錯位移動會被晶粒邊界中斷，減小晶粒大小則限制錯位移動而造成合金的機械強度較高。例如使用Ge及稀土精製合金的晶粒。類似地，在沉澱強化中，在基質中溶解度較低的合金元素形成沉澱介金屬。其希望此介金屬均勻分布在Sn基質的晶粒內，固定錯位，結果改良合金的機械強度。此添加物的實例為Ag、Cu、Ti、Co、Ni、Ce、與Mn。
界面IMC及界面孔隙的生長可經由在合金發展期間對焊料添加擴散調節劑而控制。類似地，整體焊料合金的機械性質可經由形成介金屬及微結構精製而受 到控制。欲添加的合金元素之選擇依其與合金系統的關係、及生成的熱力學與動力學性質而定。本發明顯示界面介金屬不僅負責實際的焊料與基板之間連結，亦可被設計成改良導熱度及導電度。
雖然本質脆弱，但當長期處於高溫條件下時介金屬的行為相當獨特。在此證明在高溫操作下，依所使用的合金可改良導熱度及導電度。亦證明可設計焊料合金組成物，使得其界面介金屬產生改良的導熱度及導電度。Cu6Sn5與Cu3Sn介金屬形成整體焊料合金與銅基板之間的界面。合金A、合金B、SAC305、Cu6Sn5、與Cu3Sn的導熱度及電阻率個別值示於表1。Cu3Sn的導熱度比SAC305整體合金高，電阻率則較低。因此，在焊料接頭的情形，界面介金屬對於得到高導熱度及導電度扮演重要角色。
評估銅金屬化晶元上的焊料接頭而調查175℃高溫儲存對介金屬厚度的影響，如第1圖所示。最初僅觀察到Cu6Sn5，但是經過一段時間亦觀察到第二介金屬Cu3Sn。如表1所示，介金屬帶有不同的導熱度及導 電度。因此，計算總介金屬厚度中各介金屬的貢獻(第1圖)，且相關到表1所示的導熱度及電阻率值。
第2及3圖顯示SAC305與合金B在高溫儲存期間的導熱度及電阻率之估計值。對接受熱循環(即交替暴露於冷熱循環一段時間)之樣品亦觀察到類似行為。在高溫儲存下隨著時間增加，不似SAC305，合金B帶有導熱度提高及導電度下降的獨特特徵。亦應注意的是，使用SAC305作為基準，因為其銀含量類似合金B。因此，合金B的介金屬特徵與一般Sn-Ag-Cu合金之合金組成物無關，但與其獨特的合金添加物有關。
導熱度隨溫度之變化：
如第4圖所示，當溫度從25℃上升到150℃時，SAC305的導熱度下降約13%。在相同條件下，新穎合金A的導熱度下降約9%，及合金B的導熱度下降僅4%。因此，如果將合金B用於高功率LED組合件之晶元黏結或組件黏結，則組合合金B的零件在高電流操作下顯示LED性能變動極小。換言之，LED波長偏移較小，維持效率，且LED可以更高功率密度操作。類似地，如果將合金用於晶元黏結、及任何其他高功率電子組件之其他零件組合件，則觀察到類似的性能優勢。
導電度隨溫度之變化：
如第5圖所示，在相同條件下當溫度從25℃上升到85℃時，SAC305焊料合金的電阻率提高約27%，新穎合金A的電阻率提高不到20%。如果將合金A用於晶元黏結及用於製造高功率LED組合件之電互連，則其在高 電流密度操作下顯示LED性能變動極小，且以更高效能/效率操作。
高功率LED性能：
使用SAC305、合金A、與合金B作為封裝黏結材料(各約16個)，在撓性PET基板上組合48個中功率LED。在積分球中測量其光學、電、及熱性能，而評估這些LED。在最初分析之後，將LED置於空氣對空氣熱循環槽中，從-40℃循環到125℃及暫留時間為30分鐘。每250次熱循環，至多1500次，將這些LED移除及在積分球中重新評估。在此報告的資料為絕對測量值、及各LED的溫度循環前性能之正規化之值。
第6圖顯示組合SAC305、合金A、與合金B之LED的光通量為驅動電功率的函數。其為已焊接LED在任何老化或溫度循環之前的最初性能。具有合金A與合金B之LED顯示光通量比具有SAC305之LED高約10%。在1500次溫度循環之後，合金A與B在高功率呈現光通量比SAC305高大約19%，如第7圖所示。如第8圖所示，亦在光效能觀察到類似的性能差異。在1500次溫度循環之後，合金A與B呈現光效能比SAC305高大約12-18%。
如第9圖所示，組合合金A與合金B之LED顯示在開始時(0次循環)光通量輸出比組合SAC305者高。另外，這些LED亦顯示在溫度循環期間光通量下降比組合SAC305之LED小。
當比較各組LED的正規化通量時，通量輸出變化甚至更清楚，如第10圖所繪製。SAC305 LED顯示經 過1500次循環的光通量下降為約17%，而合金A與合金B的LED經過相同循環次數的下降為約8-9%。
類似地，這些LED的光效能亦顯示，組合合金A與B之LED之值比SAC305高。另外，如第11圖所示，溫度循環之後的效能下降亦減小。
其他的LED性能測量為其相關色溫(CCT)，及其在LED壽命中的安定性。第12圖顯示組合SAC305、合金A、與合金B焊料之3組LED經過1500次溫度循環的CCT。經過1500次循環，組合SAC305之LED顯示CCT變化超過15%，而組合合金A與合金B者顯示CCT變化小於5%。這些結果亦指向這些合金在高應力操作條件下的機械、熱、及電性質之安定性。
合金例：
本發明之合金的實例示於表1，各合金的其餘部分為錫。
本發明在此通常使用肯定性語言說明許多具體實施例而揭示。本發明亦特別包括其中全部或部分排除特定標的之具體實施例，如物質或材料、方法步驟及條件、協定、步驟、檢驗方法、或分析方法。因此，即使本發明在此通常未就本發明所未包括的態樣而表示，但仍在此揭示未明確包括於本發明之態樣。
現已說明許多本發明之具體實施例。儘管如此，應了解，其可進行各種修改而不背離本發明之精神及範圍。

Claims (20)

  1. 一種無鉛、無銻焊料合金，其包含：(a)10重量百分比以下的銀(b)10重量百分比以下的鉍(c)3重量百分比以下的銅(d)至少一種以下之元素至多1重量百分比之鎳至多1重量百分比之鈦至多1重量百分比之鈷至多3.5重量百分比之銦至多1重量百分比之鋅至多1重量百分比之鈰(e)視情況之一種或以上的以下元素0至1重量百分比之錳0至1重量百分比之鉻0至1重量百分比之鍺0至1重量百分比之鐵0至1重量百分比之鋁0至1重量百分比之磷0至1重量百分比之金0至1重量百分比之鎵0至1重量百分比之碲0至1重量百分比之硒0至1重量百分比之鈣0至1重量百分比之釩 0至1重量百分比之鉬0至1重量百分比之鉑0至1重量百分比之鎂0至1重量百分比之稀土(f)其餘為錫，連同任何無法避免的雜質。
  2. 一種無鉛焊料合金，其包含：(a)10重量百分比以下的銀(b)10重量百分比以下的鉍(c)3重量百分比以下的銅(d)4重量百分比以下的銻(e)至少一種以下元素至多1重量百分比之鎳至多1重量百分比之鈦至多1重量百分比之鈷至多3.5重量百分比之銦至多1重量百分比之鋅至多1重量百分比之鈰(f)視情況之一種以上的以下元素0至1重量百分比之錳0至1重量百分比之鉻0至1重量百分比之鍺0至1重量百分比之鐵0至1重量百分比之鋁0至1重量百分比之磷0至1重量百分比之金 0至1重量百分比之鎵0至1重量百分比之碲0至1重量百分比之硒0至1重量百分比之鈣0至1重量百分比之釩0至1重量百分比之鉬0至1重量百分比之鉑0至1重量百分比之鎂0至1重量百分比之稀土(g)其餘為錫，連同任何無法避免的雜質。
  3. 如請求項1之無鉛、無銻焊料合金，其中該合金之熔點為200至222℃。
  4. 如請求項2之無鉛焊料合金，其中該合金之熔點為200至222℃。
  5. 如請求項1之焊料合金，其中該合金為棒、固體或助焊劑芯電線、箔或片、或粉末或糊(粉末加上助焊劑摻合物)之形式，或用於球柵陣列接頭或晶片尺寸封裝之焊球、或其他預先形成的焊片，有或無助焊劑芯或助焊劑塗層。
  6. 如請求項2之焊料合金，其中該合金為棒、固體或助焊劑芯電線、箔或片、或粉末或糊(粉末加上助焊劑摻合物)之形式，或用於球柵陣列接頭或晶片尺寸封裝之焊球、或其他預先形成的焊片，有或無助焊劑芯或助焊劑塗層。
  7. 如請求項1之焊料合金，其中該合金包含鎳。
  8. 如請求項1之焊料合金，其中該合金包含鈰。
  9. 一種焊接接頭，其包含無鉛、無銻焊料合金，該無鉛、無銻焊料合金包含：(a)10重量百分比以下的銀(b)10重量百分比以下的鉍(c)3重量百分比以下的銅(d)至少一種以下元素至多1重量百分比之鎳至多1重量百分比之鈦至多1重量百分比之鈷至多3.5重量百分比之銦至多1重量百分比之鋅至多1重量百分比之鈰(e)視情況之一種以上的以下元素0至1重量百分比之錳0至1重量百分比之鉻0至1重量百分比之鍺0至1重量百分比之鐵0至1重量百分比之鋁0至1重量百分比之磷0至1重量百分比之金0至1重量百分比之鎵0至1重量百分比之碲0至1重量百分比之硒0至1重量百分比之鈣 0至1重量百分比之釩0至1重量百分比之鉬0至1重量百分比之鉑0至1重量百分比之鎂0至1重量百分比之稀土(f)其餘為錫，連同任何無法避免的雜質。
  10. 一種焊接接頭，其包含無鉛焊料合金，該無鉛焊料合金包含：(a)10重量百分比以下的銀(b)10重量百分比以下的鉍(c)3重量百分比以下的銅(d)4重量百分比以下的銻(e)至少一種以下元素至多1重量百分比之鎳至多1重量百分比之鈦至多1重量百分比之鈷至多3.5重量百分比之銦至多1重量百分比之鋅至多1重量百分比之鈰(f)視情況之一種以上的以下元素0至1重量百分比之錳0至1重量百分比之鉻0至1重量百分比之鍺0至1重量百分比之鐵0至1重量百分比之鋁 0至1重量百分比之磷0至1重量百分比之金0至1重量百分比之鎵0至1重量百分比之碲0至1重量百分比之硒0至1重量百分比之鈣0至1重量百分比之釩0至1重量百分比之鉬0至1重量百分比之鉑0至1重量百分比之鎂0至1重量百分比之稀土(g)其餘為錫，連同任何無法避免的雜質。
  11. 一種焊接方法，該方法的步驟包含：a)將焊料合金施加於基板，其中該焊料為無鉛、或無鉛無銻焊料合金；其中該焊料可藉波焊法、表面黏著技術(SMT)焊法、晶元焊法、熱界面焊法、人工焊法、雷射與RF誘發焊法、重工焊法、積層、及其組合。
  12. 如請求項11之方法，其中該無鉛、無銻焊料合金包含：(a)10重量百分比以下的銀(b)10重量百分比以下的鉍(c)3重量百分比以下的銅(d)至少一種以下元素至多1重量百分比之鎳 至多1重量百分比之鈦至多1重量百分比之鈷至多3.5重量百分比之銦至多1重量百分比之鋅至多1重量百分比之鈰(e)視情況之一種以上的以下元素0至1重量百分比之錳0至1重量百分比之鉻0至1重量百分比之鍺0至1重量百分比之鐵0至1重量百分比之鋁0至1重量百分比之磷0至1重量百分比之金0至1重量百分比之鎵0至1重量百分比之碲0至1重量百分比之硒0至1重量百分比之鈣0至1重量百分比之釩0至1重量百分比之鉬0至1重量百分比之鉑0至1重量百分比之鎂0至1重量百分比之稀土(f)其餘為錫，連同任何無法避免的雜質。
  13. 如請求項11之方法，其中該基板為印刷電路板、撓性基板、金屬芯電路板、引線架(leadframe)、Al 2O 3或 AlN上的直接鍵結銅。
  14. 如請求項11之方法，其中該基板為LED組件、LED晶元、與LED包裝、高功率開關、高功率放大器、或任何其他的電子組件。
  15. 如請求項14之方法，其中該LED組件經過1500次溫度循環的CCT變化小於5%。
  16. 如請求項11之方法，其中當焊料合金溫度達到150℃時，該焊料合金的導熱度下降小於10%。
  17. 如請求項11之方法，其中當焊料合金溫度達到85℃時，該焊料合金的電阻率提高小於20%。
  18. 如請求項14之方法，其中該具有所施加的該焊料合金之LED的光效能相較於具有SAC305之LED高至少10%。
  19. 如請求項14之方法，其中該具有所施加的該焊料合金之LED在溫度循環期間的光通量下降相較於具有SAC305之LED為小。
  20. 如請求項14之方法，其中使用晶元黏結將該焊料施加於LED。
TW106133550A 2016-10-06 2017-09-29 用於電子互連的先進焊料合金及焊接方法 TWI650426B (zh)

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5880766B1 (ja) * 2015-05-26 2016-03-09 千住金属工業株式会社 はんだ合金、はんだボール、チップソルダ、はんだペースト及びはんだ継手
DE102017206932A1 (de) * 2017-04-25 2018-10-25 Siemens Aktiengesellschaft Lotformteil zum Erzeugen einer Diffusionslötverbindung und Verfahren zum Erzeugen eines Lotformteils
EP3621767B1 (en) 2017-05-12 2022-03-16 Alpha Assembly Solutions Inc. Solder material and method for die attachment
US11577343B2 (en) * 2017-11-09 2023-02-14 Alpha Assembly Solutions Inc. Low-silver alternative to standard SAC alloys for high reliability applications
US11732330B2 (en) * 2017-11-09 2023-08-22 Alpha Assembly Solutions, Inc. High reliability lead-free solder alloy for electronic applications in extreme environments
US11476399B2 (en) * 2017-11-29 2022-10-18 Panasonic Intellectual Property Management Co., Ltd. Jointing material, fabrication method for semiconductor device using the jointing material, and semiconductor device
JP6731034B2 (ja) * 2018-12-25 2020-07-29 株式会社タムラ製作所 鉛フリーはんだ合金、はんだ接合用材料、電子回路実装基板及び電子制御装置
JP6731037B2 (ja) * 2018-12-28 2020-07-29 株式会社タムラ製作所 鉛フリーはんだ合金、はんだ接合用材料、電子回路実装基板及び電子制御装置
TWI814081B (zh) * 2019-09-02 2023-09-01 美商阿爾發金屬化工公司 高溫超高可靠性合金、其製造方法及其應用
WO2021106056A1 (ja) * 2019-11-26 2021-06-03 株式会社Ｆｕｊｉ 部品実装方法および部品実装システム
DE102020102938A1 (de) * 2020-02-05 2021-08-05 Marelli Automotive Lighting Reutlingen (Germany) GmbH Schaltungsträgerplatte und Verfahren zum Herstellen einer Schaltungsträgerplatte
JP6912742B1 (ja) * 2020-02-14 2021-08-04 千住金属工業株式会社 鉛フリーかつアンチモンフリーのはんだ合金、はんだボール、およびはんだ継手
JP6889387B1 (ja) * 2020-06-23 2021-06-18 千住金属工業株式会社 はんだ合金、ソルダペースト、はんだボール、ソルダプリフォーム、はんだ継手、車載電子回路、ｅｃｕ電子回路、車載電子回路装置、及びｅｃｕ電子回路装置
CN111705239A (zh) * 2020-06-29 2020-09-25 泰安晶品新材料科技有限公司 一种集成电路封装用bga锡球的材料配方及熔炼工艺
CN112077408A (zh) * 2020-09-08 2020-12-15 宁波江丰电子材料股份有限公司 一种铬硅靶材与铜背板的钎焊方法
EP4249165A4 (en) * 2020-11-19 2024-05-15 Senju Metal Industry Co., Ltd. WELDING ALLOY, WELDING GLOBULE AND SOFT SOLDER JOINT
CN113652575A (zh) * 2021-06-07 2021-11-16 中国工程物理研究院机械制造工艺研究所 一种可免助镀剂的钢用Sn基镀层或软钎料

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758407A (en) * 1987-06-29 1988-07-19 J.W. Harris Company Pb-free, tin base solder composition
US4806309A (en) * 1988-01-05 1989-02-21 Willard Industries, Inc. Tin base lead-free solder composition containing bismuth, silver and antimony
US5197253A (en) 1990-12-31 1993-03-30 Johnson David W Interlocking joint pultrusion construction
US5435857A (en) * 1994-01-06 1995-07-25 Qualitek International, Inc. Soldering composition
US6197253B1 (en) * 1998-12-21 2001-03-06 Allen Broomfield Lead-free and cadmium-free white metal casting alloy
EP1106301A1 (en) * 1999-06-11 2001-06-13 Nippon Sheet Glass Co., Ltd. Lead-free solder
DE10319888A1 (de) 2003-04-25 2004-11-25 Siemens Ag Lotmaterial auf SnAgCu-Basis
US20050100474A1 (en) * 2003-11-06 2005-05-12 Benlih Huang Anti-tombstoning lead free alloys for surface mount reflow soldering
WO2006079199A1 (en) * 2005-01-25 2006-08-03 Tir Systems Ltd. Method and apparatus for illumination and communication
US8641964B2 (en) * 2005-08-24 2014-02-04 Fry's Metals, Inc. Solder alloy
US9175368B2 (en) * 2005-12-13 2015-11-03 Indium Corporation MN doped SN-base solder alloy and solder joints thereof with superior drop shock reliability
CN101356293B (zh) * 2006-01-10 2010-12-29 伊利诺斯工具制品有限公司 低铜溶解的无铅焊料
JP5376553B2 (ja) * 2006-06-26 2013-12-25 日立金属株式会社 配線用導体及び端末接続部
KR100891761B1 (ko) * 2007-10-19 2009-04-07 삼성전기주식회사 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지
WO2014002304A1 (ja) 2012-06-29 2014-01-03 ハリマ化成株式会社 はんだ合金、ソルダペーストおよび電子回路基板
WO2014013632A1 (ja) * 2012-07-19 2014-01-23 ハリマ化成株式会社 はんだ合金、ソルダペーストおよび電子回路基板
US9005330B2 (en) * 2012-08-09 2015-04-14 Ormet Circuits, Inc. Electrically conductive compositions comprising non-eutectic solder alloys
ES2628028T3 (es) * 2012-10-09 2017-08-01 Alpha Assembly Solutions Inc. Soldadura de estaño libre de plomo y libre de antimonio fiable a altas temperaturas
JP2015077601A (ja) 2013-04-02 2015-04-23 千住金属工業株式会社 鉛フリーはんだ合金
JP2018505514A (ja) * 2014-12-02 2018-02-22 イノベーションズ イン オプティクス， インコーポレイテッド 高放射輝度発光ダイオード光エンジン
JP5723056B1 (ja) 2014-12-15 2015-05-27 ハリマ化成株式会社 はんだ合金、ソルダペーストおよび電子回路基板

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