TW201814768A - Apparatus for processing process byproduct and method for determining exchange period of collector - Google Patents

Apparatus for processing process byproduct and method for determining exchange period of collector Download PDF

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TW201814768A
TW201814768A TW106128288A TW106128288A TW201814768A TW 201814768 A TW201814768 A TW 201814768A TW 106128288 A TW106128288 A TW 106128288A TW 106128288 A TW106128288 A TW 106128288A TW 201814768 A TW201814768 A TW 201814768A
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collector
valve
products
product
processing
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金泰勳
金俊浩
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Ａｐ系統股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • Environmental & Geological Engineering (AREA)
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  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

The present disclosure relates to an apparatus for processing process byproducts and a method for determining an exchange period of a collector using the same, and more particularly, to an apparatus for processing process byproducts in an exhaust line and a method for determining an exchange period of a collector using the same. The apparatus for processing the process byproducts includes a collector installed on an exhaust line between a process chamber and a valve configured to control a pressure of the process chamber to collect the process byproducts discharged from the process chamber. The collector includes a collector housing communicating with the exhaust line and a hollow collection structure installed in the collector housing to collect the process byproducts and configured to control a flow path of the process byproducts.

Description

處理副產物裝置以及使用其以決定收集器交換周期之方法Method for processing byproduct devices and using them to determine collector exchange cycle

本公開涉及一種用於處理製程副産物的設備以及一種用於使用所述設備確定收集器的更換期的方法，且更明確地說，涉及一種用於處理排放管線中的製程副産物的設備以及一種用於使用所述設備確定收集器的更換期的方法。The present disclosure relates to a device for processing process by-products and a method for determining a replacement period of a collector using the device, and more particularly, to a device for processing process by-products in a discharge pipeline and a method for processing Method for determining the replacement period of a collector using the device.

爲了製造半導體，使用光阻的微影製程（lithography process）是必要的。光阻由有機聚合物或光敏劑與對光敏感的聚合物的混合物所組成。在曝光以及溶解製程之後圖案化在基底上的光阻，在對基底或基底上的膜進行蝕刻的製程中將圖案轉移到基底上。這種聚合物被稱作光阻，且通過使用光源在基底上形成精細圖案的製程被稱作微影製程。In order to manufacture semiconductors, a lithography process using photoresist is necessary. Photoresist consists of a mixture of organic polymers or photosensitizers and light-sensitive polymers. The photoresist on the substrate is patterned after the exposure and dissolution process, and the pattern is transferred to the substrate in the process of etching the substrate or the film on the substrate. This polymer is called a photoresist, and a process of forming a fine pattern on a substrate by using a light source is called a lithography process.

在半導體製造製程中，主要通過灰化製程從基底去除在形成例如線條圖案或空間圖案等各種精細電路圖案的製程或離子植入製程中用作罩幕的光阻。In a semiconductor manufacturing process, a photoresist used as a mask in a process of forming various fine circuit patterns such as a line pattern or a space pattern or an ion implantation process is mainly removed from a substrate through an ashing process.

在通常使用的灰化製程中，氧電漿可在晶片置於在高溫（200℃至300℃）下經受加熱的加熱器夾盤上的狀態下與光阻發生反應，以去除光阻。氧（O2 ）氣主要用作反應氣體，並且，另一氣體可與氧氣混合以提高灰化效率。In the commonly used ashing process, the oxygen plasma can react with the photoresist while the wafer is placed on a heater chuck subjected to heating at a high temperature (200 ° C to 300 ° C) to remove the photoresist. Oxygen (O 2) gas is mainly used as the reaction gas, and the oxygen gas mixed with another gas to increase the ashing efficiency.

灰化製程是在與外部隔絕的製程腔室中執行。例如反應氣體、未反應氣體以及反應副産物等製程副産物通過連接到製程腔室的排放管線排出。排放管線不僅用以排出製程副産物，而且還用以控制製程腔室中的製程壓力。The ashing process is performed in a process chamber isolated from the outside. Process by-products such as reaction gases, unreacted gases, and reaction by-products are discharged through a discharge line connected to the process chamber. The discharge line is not only used to discharge process by-products, but also used to control the process pressure in the process chamber.

然而，通過排放管線排出的反應副産物在穿過溫度相對低的排放管線時凝結在所述排放管線中，且因此以粉末或具有黏性性質的聚合物的形式積聚。具體地說，如果灰化製程使用氫（H2 ）氣，那麽積聚量會進一步增大。這種聚合物不僅積聚在排放管線中，而且還積聚在製程腔室的內壁上以及用於控制壓力的閥中，從而中斷廢氣流動或導致閥發生故障。 [現有技術文檔] [專利文檔] （專利文檔1）KR10-1994-0011844 AHowever, the reaction by-products discharged through the discharge line are condensed in the discharge line when passing through the relatively low-temperature discharge line, and thus are accumulated in the form of a powder or a polymer having viscous properties. Specifically, if hydrogen (H 2 ) gas is used in the ashing process, the accumulation amount will further increase. This polymer accumulates not only in the discharge line, but also on the inner walls of the process chamber and in the valve used to control the pressure, thereby interrupting the flow of exhaust gas or causing the valve to malfunction. [Prior Art Document] [Patent Document] (Patent Document 1) KR10-1994-0011844 A

本公開提供一種用於處理製程副産物的設備以及一種用於使用所述設備確定收集器的更換期的方法，所述設備能够有效地防止製程副産物積聚在排放管線以及控制製程腔室的壓力的閥中。The present disclosure provides an apparatus for processing process by-products and a method for determining a replacement period of a collector using the apparatus, which can effectively prevent the accumulation of process by-products in a discharge line and a valve that controls the pressure of a process chamber. in.

根據示範性實施例，一種用於處理製程副産物的設備包含收集器，所述收集器安裝在製程腔室與被配置成製程腔室的壓力的閥（valve）之間的排放管線上，以收集從製程腔室排出的製程副産物，其中所述收集器包含：收集器外殼，其與排放管線連通；以及中空的收集結構，其安裝在收集器外殼中以收集製程副産物，且被配置成控制製程副産物的流動路徑。According to an exemplary embodiment, an apparatus for processing process by-products includes a collector installed on a discharge line between a process chamber and a valve configured as a pressure of the process chamber to collect A process by-product discharged from a process chamber, wherein the collector includes: a collector housing, which is in communication with the discharge line; and a hollow collection structure, which is installed in the collector housing to collect the process by-products, and is configured to control the process Flow path of by-products.

收集結構的橫截面積可從收集器外殼的流入孔（inflow hole）到排出孔（discharge hole）逐漸减小。The cross-sectional area of the collecting structure may gradually decrease from the inflow hole to the discharge hole of the collector housing.

可設置多個收集結構以提供具有彼此不同的橫截面積的流動路徑，且多個所述收集結構可被安置成從排放管線的中心部分向外隔開。A plurality of collecting structures may be provided to provide a flow path having a cross-sectional area different from each other, and the plurality of collecting structures may be disposed to be spaced outwardly from a central portion of the discharge line.

收集器還可包含經由收集器外殼以及收集結構安裝的冷却管線。The collector may also include cooling lines installed via the collector housing and the collection structure.

收集器可更換地（exchangeably）安裝。The collector is exchangeably installed.

所述設備還可包含加熱器，所述加熱器與收集器的後端連通，以對製程副産物進行加熱。The apparatus may further include a heater in communication with the rear end of the collector to heat process by-products.

所述設備還可包含電漿處理單元，所述電漿處理單元與收集器的後端連通，以對製程副産物進行電漿處理且由此使製程副産物分解。The apparatus may further include a plasma processing unit, which is in communication with the rear end of the collector to perform plasma processing on the process by-products and thereby decompose the process by-products.

電漿處理單元可包含：反應器，其與收集器外殼連通以提供製程副産物流動穿過的流動空間；電漿産生器，其安裝在反應器外部以向流動穿過反應器內部的製程副産物施加活化能（activation energy）；以及電源，其被配置成對電漿産生器供電。The plasma processing unit may include: a reactor in communication with the collector housing to provide a flow space through which process by-products flow; a plasma generator installed outside the reactor to apply process by-products flowing through the interior of the reactor Activation energy; and a power source configured to power the plasma generator.

電漿産生器可包含圍繞反應器的電感耦合電漿（inductively coupled plasma，ICP）線圈。The plasma generator may include an inductively coupled plasma (ICP) coil surrounding the reactor.

所述設備還可包含控制單元，所述控制單元被配置成確認閥的切換程度，以確定收集器的更換期。The apparatus may further include a control unit configured to confirm a degree of switching of the valve to determine a replacement period of the collector.

所述閥可包含節流閥（throttle valve），所述節流閥被配置成使閥板（valve plate）旋轉且由此控制製程腔室的壓力，且所述控制單元可包含在先前過程中所測量的閥板的旋轉角與在當前過程中所測量的閥板的旋轉角，以確定收集器的更換期。The valve may include a throttle valve configured to rotate a valve plate and thereby control the pressure of the process chamber, and the control unit may be included in a previous process The measured rotation angle of the valve plate and the rotation angle of the valve plate measured in the current process determine the replacement period of the collector.

製程副産物可含有碳（C）、氫（N）以及氧（O）中的至少一種元素。The process by-product may contain at least one element of carbon (C), hydrogen (N), and oxygen (O).

根據另一示範性實施例，一種用於確定收集器的更換期的方法包含以下步驟，所述收集器安裝在製程腔室與被配置成製程腔室的壓力的閥之間的排放管線上，以收集從製程腔室排出的製程副産物：根據製程腔室的壓力來確認閥的當前位置值；根據在先前過程中所測量的閥的位置值，計算出閥的經確認當前位置值的變化；以及計算出在設定臨界值內的重複變化次數以確定收集器的更換期。According to another exemplary embodiment, a method for determining a replacement period of a collector includes the steps of installing the collector on a discharge line between a process chamber and a valve configured as a pressure of the process chamber, To collect the process by-products discharged from the process chamber: confirm the current position value of the valve according to the pressure of the process chamber; calculate the change in the confirmed current position value of the valve based on the position value of the valve measured in the previous process; And calculate the number of repeated changes within a set threshold to determine the replacement period of the collector.

所述閥可包含節流閥，所述節流閥被配置成使閥板旋轉且由此控制製程腔室的壓力，且所述閥的位置值可包含閥板的角度值。The valve may include a throttle valve configured to rotate a valve plate and thereby control a pressure of a process chamber, and a position value of the valve may include an angle value of the valve plate.

在先前過程中所測量的閥的位置值可包含剛好在更換收集器之後所測量的閥的位置值。The position value of the valve measured in the previous process may include the position value of the valve measured immediately after the collector is replaced.

在下文中，將參考附圖詳細地描述具體實施例。然而，本發明可以不同的形式來體現，且不應解釋爲局限於本文所陳述的實施例。更確切地，提供這些實施例是爲了使得本發明將是透徹且完整的，且將把本發明的範圍完整地傳達給所屬領域的技術人員。在圖式中，相同參考標號始終指代相同元件。Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. The invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this invention will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the same reference numerals always refer to the same elements.

圖1是用於解釋根據示範性實施例的用於處理製程副産物的設備連接到製程腔室的狀態的視圖。FIG. 1 is a view for explaining a state in which an apparatus for processing a process by-product is connected to a process chamber according to an exemplary embodiment.

參考圖1，在根據示範性實施例的用於處理副産物的設備10中，排放管線50安裝在製程腔室40與用於控制製程腔室40的壓力的閥60之間。Referring to FIG. 1, in an apparatus 10 for processing by-products according to an exemplary embodiment, a discharge line 50 is installed between a process chamber 40 and a valve 60 for controlling a pressure of the process chamber 40.

製程腔室40可包含用於執行例如沉積、蝕刻或灰化等製造製程的所有製程腔室40，具體地說可包含其中執行以下灰化製程的製程腔室：去除在形成例如線條圖案或空間圖案等各種精細電路圖案的製程或離子植入製程中用作罩幕的光阻。在如上文所描述的灰化製程中，當與其它製程相比時可産生相對較大數量的製程副産物，從而更加嚴重地導致以下問題：包含反應氣體、未反應氣體以及反應副産物的製程副産物由於由有機聚合物所組成的光阻的特性而集中且積聚在排放管線或真空泵70中。The process chamber 40 may include all process chambers 40 for performing a manufacturing process such as deposition, etching, or ashing, and may specifically include process chambers in which the following ashing process is performed: Photoresist used as a mask in the production of various fine circuit patterns such as patterns or ion implantation processes. In the ashing process as described above, when compared with other processes, a relatively large number of process by-products can be generated, which further causes the following problems: process by-products containing reactive gases, unreacted gases, and reaction by-products due to The characteristics of a photoresist composed of an organic polymer are concentrated and accumulated in a discharge line or a vacuum pump 70.

當示意性地解釋在製程腔室40中執行灰化製程的過程時，儘管未繪示，但通過設置於製程腔室40中的基底入口（未繪示）將基底（未繪示）裝載到支撑構件（未繪示）上。當裝載完基底時，支撑構件在製程溫度下對基底進行加熱，且連接到排放管線50的真空泵70在預設壓力下對製程腔室40內的壓力進行减壓。壓力可由安裝在排放管線50上的閥60控制。When the process of performing the ashing process in the process chamber 40 is schematically explained, although not shown, a substrate (not shown) is loaded to the substrate (not shown) through a substrate inlet (not shown) provided in the process chamber 40. On a supporting member (not shown). When the substrate is loaded, the support member heats the substrate at the process temperature, and the vacuum pump 70 connected to the discharge line 50 decompresses the pressure in the process chamber 40 at a preset pressure. The pressure can be controlled by a valve 60 installed on the discharge line 50.

當例如製程腔室40內的壓力以及溫度等製程條件滿足預設條件時，可通過在製程腔室40內使用電漿來産生氧自由基或氫自由基，且接著將其供應到基底。可通過氧電漿或氫電漿去除基底的表面上剩餘的光阻。此處，供應到製程腔室40中的包含反應氣體、未反應氣體以及反應副産物的製程副産物通過排放管線50排出。When process conditions such as pressure and temperature in the process chamber 40 satisfy preset conditions, an oxygen radical or a hydrogen radical may be generated by using a plasma in the process chamber 40 and then supplied to the substrate. The remaining photoresist on the surface of the substrate can be removed by an oxygen plasma or a hydrogen plasma. Here, the process by-products including the reaction gas, the unreacted gas, and the reaction by-products supplied to the process chamber 40 are discharged through the discharge line 50.

如上文所描述，當在基底的表面上執行灰化製程（光阻去除製程）時，製程腔室40內的製程副産物通過排放管線50排出到外部。也就是說，通過排放管線50排出的製程副産物包含反應氣體以及未反應氣體。當執行所述製程時，在製程腔室40中産生的反應副産物可與包含光阻的有機聚合物一起排出。因此，製程副産物含有碳（C）、氫（H）以及氧（O）中的至少一種元素。As described above, when an ashing process (photoresist removal process) is performed on the surface of the substrate, the process by-products in the process chamber 40 are discharged to the outside through the discharge line 50. That is, the process by-products discharged through the discharge line 50 include a reactive gas and an unreacted gas. When the process is performed, reaction byproducts generated in the process chamber 40 may be discharged together with the organic polymer including a photoresist. Therefore, the process by-product contains at least one element of carbon (C), hydrogen (H), and oxygen (O).

此處，處於固態或液體的製程副産物可積聚在排放管線50的內壁上。所積聚的製程副産物可中斷排放管線50內的流動，並且，製程副産物可積聚在安裝在排放管線50上的閥60上從而導致故障。此現象不局限於通過排放管線50排出的光阻，而是適用於流動穿過排放管線50的液體材料與固體材料兩者。並且，由於氣體材料在溫度低於製程腔室40的溫度的排放管線50內可能變成液態或固態，因此可能會發生此現象。因此，爲了防止發生此現象，有必要收集流動穿過排放管線50的製程副産物。Here, process by-products in a solid or liquid state can accumulate on the inner wall of the discharge line 50. The accumulated process by-products may interrupt the flow in the discharge line 50, and the process by-products may accumulate on the valve 60 installed on the discharge line 50 to cause a malfunction. This phenomenon is not limited to the photoresist discharged through the discharge line 50, but is applicable to both liquid materials and solid materials flowing through the discharge line 50. Furthermore, this phenomenon may occur because the gaseous material may become liquid or solid in the discharge line 50 having a temperature lower than the temperature of the process chamber 40. Therefore, in order to prevent this, it is necessary to collect process by-products flowing through the discharge line 50.

圖2是繪示根據示範性實施例的正安裝收集器的狀態的示意圖，且圖3是繪示根據示範性實施例的收集器的收集結構的示意圖。圖4是繪示根據示範性實施例的正安裝冷却管線的狀態的示意圖。FIG. 2 is a schematic diagram illustrating a state where a collector is being installed according to an exemplary embodiment, and FIG. 3 is a schematic diagram illustrating a collecting structure of a collector according to an exemplary embodiment. FIG. 4 is a schematic diagram illustrating a state where a cooling line is being installed according to an exemplary embodiment.

參考圖2到4，根據示範性實施例的用於處理製程副産物的設備10包含收集器100，所述收集器100安裝在製程腔室40與用於控制製程腔室40的壓力的閥60之間的排放管線50上，以收集從製程腔室40排出的製程副産物。收集器100包含：收集器外殼110，其與排放管線50連通；以及中空的收集結構120，其安裝在收集器外殼110中以收集製程副産物且控制製程副産物的流動路徑。2 to 4, an apparatus 10 for processing by-products according to an exemplary embodiment includes a collector 100 installed in a process chamber 40 and a valve 60 for controlling the pressure of the process chamber 40 To the discharge line 50 to collect process by-products discharged from the process chamber 40. The collector 100 includes a collector housing 110 in communication with the discharge line 50 and a hollow collection structure 120 installed in the collector housing 110 to collect process by-products and control a flow path of the process by-products.

收集器110安裝在製程腔室40與用於控制製程腔室40的壓力的閥60之間的排放管線50上。收集器100的安裝位置並不特別地局限於排放管線50。舉例來說，收集器100可安裝在用於控制製程腔室40的壓力的閥60的前端上，以防止製程副産物積聚在閥60中以及排放管線50的內部。The collector 110 is installed on a discharge line 50 between the process chamber 40 and a valve 60 for controlling the pressure of the process chamber 40. The installation position of the collector 100 is not particularly limited to the discharge line 50. For example, the collector 100 may be mounted on the front end of a valve 60 for controlling the pressure of the process chamber 40 to prevent process by-products from accumulating in the valve 60 and inside the discharge line 50.

收集器外殼110與排放管線50連通以提供製程副産物流動穿過排放管線50的流動空間。收集器外殼110包含流入孔以及排出孔，所述流入孔與排放管線50連通以允許引入製程副産物，收集器外殼110內的製程産物通過所述排出孔排出。因此，收集器外殼110可具有中空形狀，所述收集器外殼110具有從排放管線50的內壁延伸的內壁且由與排放管線50相同的材料所組成，即，由具有優良耐熱性的不銹鋼（steel use stainless，SUS）材料所組成。The collector housing 110 is in communication with the discharge line 50 to provide a flow space for process byproducts to flow through the discharge line 50. The collector housing 110 includes an inflow hole and a discharge hole, which are in communication with the discharge line 50 to allow the introduction of process by-products, and the process products in the collector housing 110 are discharged through the discharge hole. Therefore, the collector housing 110 may have a hollow shape, the collector housing 110 having an inner wall extending from the inner wall of the discharge line 50 and composed of the same material as the discharge line 50, that is, stainless steel having excellent heat resistance (Steel use stainless, SUS).

收集結構120安裝在收集器外殼110中以收集製程副産物且控制製程産物的流動路徑。此處，收集結構120可具有中空形狀以控制製程副産物的流動路徑，從而使得製程副産物沿著排放管線50的中心部分流動。上述收集結構120可由具有耐腐蝕性且易於製造的鋁材料所組成。The collection structure 120 is installed in the collector housing 110 to collect process by-products and control the flow path of the process products. Here, the collection structure 120 may have a hollow shape to control a flow path of the process by-products so that the process by-products flow along a central portion of the discharge line 50. The collection structure 120 may be made of an aluminum material having corrosion resistance and being easy to manufacture.

收集結構120的流動路徑可具有如下橫截面積，所述橫截面積從收集器外殼110的流入孔（即，收集器外殼110的上端）到收集器外殼110的排出孔（即，收集器外殼110的下端）逐漸减小，以增大與製程副産物的接觸面積且延遲排出時間。並且，流動路徑的中心部分可對應於排放管線50的中心部分，以允許製程副産物沿著排放管線50的中心部分流動。並且，收集結構120的內壁可具有不均勻形狀，且可沿內壁形成多個階梯狀部分以更加擴展與製程副産物的接觸面積。The flow path of the collecting structure 120 may have a cross-sectional area from the inflow hole of the collector housing 110 (ie, the upper end of the collector housing 110) to the discharge hole of the collector housing 110 (ie, the collector housing The lower end of 110) is gradually reduced to increase the contact area with process by-products and delay the discharge time. Also, the central portion of the flow path may correspond to the central portion of the discharge line 50 to allow process by-products to flow along the central portion of the discharge line 50. In addition, the inner wall of the collection structure 120 may have a non-uniform shape, and a plurality of stepped portions may be formed along the inner wall to further expand the contact area with the by-products of the process.

當收集結構120的流動路徑具有向下逐漸减小的橫截面積時，收集結構120的側壁相對於排放管線50的橫向截面可具有預定角度。此處，收集結構120的側壁相對於排放管線50的橫向截面的角度可爲40°至80°。當收集結構的側壁的角度小於40°時，通過真空泵70的泵送（pumping）可能無法將排出的製程副産物平穩地排出到排放管線。當收集結構的側壁的角度超過80°時，難以將製程副産物收集到收集結構120中。因此，收集結構120的側壁可相對於排放管線50的橫向截面以40°至80°的角度傾斜。儘管圖式中繪示了包含具有預定厚度的側壁且具有具圓形橫截面的流動路徑的收集結構120，但本公開不局限於收集結構120的所述形狀。舉例來說，收集結構120可具有任何形狀，只要收集結構120的流動路徑朝向其下端逐漸减小即可。並且，儘管在圖式中收集結構120被安裝成與收集器外殼110的內壁隔開預定距離，但收集結構120的上端上的側壁可緊密地附接到收集器外殼110的內壁，以防止製程副産物流動穿過收集結構120與收集器外殼110之間隔開的空間。When the flow path of the collecting structure 120 has a gradually decreasing cross-sectional area, a side wall of the collecting structure 120 may have a predetermined angle with respect to a lateral cross section of the discharge line 50. Here, the angle of the side wall of the collection structure 120 with respect to the lateral cross section of the discharge line 50 may be 40 ° to 80 °. When the angle of the side wall of the collection structure is less than 40 °, pumping by the vacuum pump 70 may not be able to smoothly discharge the discharged process by-products to the discharge line. When the angle of the sidewall of the collection structure exceeds 80 °, it is difficult to collect the by-products of the process into the collection structure 120. Therefore, the sidewall of the collection structure 120 may be inclined at an angle of 40 ° to 80 ° with respect to the lateral cross section of the discharge line 50. Although the drawing illustrates a collecting structure 120 including a side wall having a predetermined thickness and a flow path having a circular cross section, the present disclosure is not limited to the shape of the collecting structure 120. For example, the collection structure 120 may have any shape as long as the flow path of the collection structure 120 gradually decreases toward its lower end. And, although the collecting structure 120 is installed to be spaced a predetermined distance from the inner wall of the collector housing 110 in the drawing, the side wall on the upper end of the collecting structure 120 may be closely attached to the inner wall of the collector housing 110 to Process byproducts are prevented from flowing through the space separated between the collection structure 120 and the collector housing 110.

並且，可設置多個收集結構120，從而使得所述多個收集結構120的流動路徑具有彼此不同的橫截面積。所述多個收集結構120可被安置成從排放管線50的中心部分向外彼此隔開。也就是說，當設置多個收集結構120時，即，包含第一收集結構126、第二收集結構124以及第三收集結構122時，第二收集結構124的流動路徑的橫截面積可大於第一收集結構126的流動路徑的橫截面積，且第三收集結構122的流動路徑的橫截面積可大於第二收集結構124的流動路徑的橫截面積。Also, a plurality of collecting structures 120 may be provided so that the flow paths of the plurality of collecting structures 120 have different cross-sectional areas from each other. The plurality of collection structures 120 may be disposed to be spaced apart from each other from a central portion of the discharge line 50. That is, when a plurality of collection structures 120 are provided, that is, when the first collection structure 126, the second collection structure 124, and the third collection structure 122 are included, the cross-sectional area of the flow path of the second collection structure 124 may be larger than that of the first collection structure 120. The cross-sectional area of the flow path of one collection structure 126 and the cross-sectional area of the flow path of the third collection structure 122 may be larger than the cross-sectional area of the flow path of the second collection structure 124.

此處，第一收集結構126可安置在排放管線50的中心部分處，且第二收集結構124可與第一收集結構隔開預定距離且安置在第一收集結構126外部。第三收集結構122可與第二收集結構124隔開預定距離且安置在第二收集結構124外部。此處，第一收集結構126的內部空間、第一收集結構126與第二收集結構124之間隔開的空間、以及第二收集結構124與第三收集結構122之間隔開的空間可提供製程副産物的流動路徑。此處，第三收集結構122的上端上的側壁也可如上文所描述般緊密地附接到收集器外殼110的內壁。Here, the first collection structure 126 may be disposed at a central portion of the discharge line 50, and the second collection structure 124 may be spaced a predetermined distance from the first collection structure and disposed outside the first collection structure 126. The third collection structure 122 may be spaced a predetermined distance from the second collection structure 124 and disposed outside the second collection structure 124. Here, the internal space of the first collection structure 126, the space separated between the first collection structure 126 and the second collection structure 124, and the space separated between the second collection structure 124 and the third collection structure 122 may provide process by-products. Flow path. Here, the side wall on the upper end of the third collection structure 122 may also be tightly attached to the inner wall of the collector housing 110 as described above.

收集器110還可包含用於使收集器外殼110以及收集結構120冷却的冷却管線130。冷却管線130具有管狀形狀，從而使得冷却流體在其中流通。可通過冷却管線130使收集器外殼110以及收集結構120冷却。對此，冷却管線130可連接到容納冷却流體的冷却流體存儲零件（未繪示）。因此，冷却管線130接收來自冷却流體存儲零件的冷却流體，以使收集器外殼110以及收集結構120冷却。The collector 110 may further include a cooling line 130 for cooling the collector housing 110 and the collection structure 120. The cooling line 130 has a tubular shape so that a cooling fluid circulates therein. The collector housing 110 and the collection structure 120 may be cooled by a cooling line 130. In this regard, the cooling line 130 may be connected to a cooling fluid storage part (not shown) containing a cooling fluid. Accordingly, the cooling line 130 receives cooling fluid from the cooling fluid storage part to cool the collector housing 110 and the collection structure 120.

例如冷却劑等冷却液體或例如氟利昂氣體（Freon gas）等冷却氣體可用作冷却流體。冷却流體的溫度可爲20℃或低於20℃。也就是說，相對於溫度爲60℃至70℃的排放管線50，收集器外殼110以及收集結構120通過冷却管線130，使其在20℃或低於20℃的溫度下冷却，且因此，也可使流動穿過經冷却的收集器外殼110以及收集結構120的製程副産物冷却，且接著在固態或黏性液態下將其收集。A cooling liquid such as a coolant or a cooling gas such as a Freon gas may be used as the cooling fluid. The temperature of the cooling fluid may be 20 ° C or lower. That is, relative to the discharge line 50 having a temperature of 60 ° C to 70 ° C, the collector housing 110 and the collection structure 120 pass through the cooling line 130 to cool them at a temperature of 20 ° C or lower, and therefore, also Process byproducts that flow through the cooled collector housing 110 and the collection structure 120 may be cooled and then collected in a solid or viscous liquid state.

冷却管線130可經由所有收集器外殼110以及收集結構120安裝以有效地使收集器外殼110以及收集結構120冷却。對此，如圖4中所繪示，冷却管線130可被安裝成穿過所有收集器外殼110以及收集結構120，且收集結構120中的每一個可由冷却管線3130固定在位。The cooling line 130 may be installed via all the collector housings 110 and the collection structure 120 to effectively cool the collector housing 110 and the collection structure 120. In this regard, as illustrated in FIG. 4, the cooling lines 130 may be installed to pass through all the collector housings 110 and the collection structures 120, and each of the collection structures 120 may be fixed in place by the cooling lines 3130.

如上文所描述，收集器100可更換地安裝在製程腔室40與用於控制製程腔室40的壓力的閥60之間的排放管線50上。對此，密封構件118可安裝在連接到排放管線50的收集器100的收集器外殼110的上端以及下端中的每一個上。密封構件118可防止製程副産物在排放管線50與收集器100之間泄漏。密封構件可包含O形環。安放O形環的密封槽112可限定在收集器外殼110的上端以及下端中的每一個中，以通過O形環在排放管線50與收集器100之間精確地調節收集器100的中心位置。As described above, the collector 100 is replaceably installed on the discharge line 50 between the process chamber 40 and the valve 60 for controlling the pressure of the process chamber 40. In this regard, the sealing member 118 may be mounted on each of the upper end and the lower end of the collector housing 110 of the collector 100 connected to the discharge line 50. The sealing member 118 may prevent process by-products from leaking between the discharge line 50 and the collector 100. The sealing member may include an O-ring. An O-ring sealing groove 112 may be defined in each of the upper end and the lower end of the collector housing 110 to accurately adjust the center position of the collector 100 between the discharge line 50 and the collector 100 through the O-ring.

圖5是繪示根據示範性實施例的正安裝加熱器的狀態的示意圖。FIG. 5 is a schematic diagram illustrating a state where a heater is being installed according to an exemplary embodiment.

參考圖5，根據示範性實施例的用於處理製程副産物的設備10還可包含加熱器200，所述加熱器200與收集器100的後端連通以對製程副産物進行加熱。加熱器200可安置在收集器100的後端上以與排放管線50連通。或者，加熱器200可直接連接到收集器100的後端。Referring to FIG. 5, the apparatus 10 for processing a process by-product according to an exemplary embodiment may further include a heater 200 that communicates with a rear end of the collector 100 to heat the process by-product. The heater 200 may be disposed on a rear end of the collector 100 to communicate with the discharge line 50. Alternatively, the heater 200 may be directly connected to the rear end of the collector 100.

加熱器200可包含加熱器外殼210以及安裝在加熱器外殼210的外壁上的加熱護套220。加熱器外殼210與排放管線50或收集器外殼110連通以提供排放管線50中的製程副産物流動穿過的流動空間。因此，加熱器外殼210可具有中空形狀，其中內壁從排放管線50或收集器外殼110的內壁延伸。The heater 200 may include a heater housing 210 and a heating jacket 220 mounted on an outer wall of the heater housing 210. The heater housing 210 is in communication with the discharge line 50 or the collector housing 110 to provide a flow space through which process byproducts in the discharge line 50 flow. Accordingly, the heater housing 210 may have a hollow shape with an inner wall extending from the inner wall of the discharge line 50 or the collector housing 110.

加熱護套220通過加熱器外殼210的外壁對加熱器外殼210內的製程副産物進行加熱。加熱護套220可設置爲圍繞加熱器外殼210的螺旋形加熱絲。一般來說，相對於溫度60℃至70℃的排放管線50，可通過在100℃或高於100℃的溫度下進行加熱的加熱護套220使製程副産物變成氣態，以防止製程副産物積聚且凝結在加熱器外殼210以及排放管線50的內壁上。The heating jacket 220 heats the process by-products in the heater housing 210 through the outer wall of the heater housing 210. The heating sheath 220 may be provided as a spiral heating wire surrounding the heater housing 210. Generally speaking, with respect to the discharge line 50 having a temperature of 60 ° C to 70 ° C, the process by-products can be made gaseous by a heating jacket 220 heated at a temperature of 100 ° C or higher to prevent the process byproducts from accumulating and condensing On the inner wall of the heater housing 210 and the discharge line 50.

圖6是繪示根據示範性實施例的正安裝電漿處理單元300的狀態的示意圖。FIG. 6 is a schematic diagram illustrating a state where a plasma processing unit 300 is being installed according to an exemplary embodiment.

參考圖6，根據示範性實施例的用於處理製程副産物的設備10還可包含電漿處理單元300，所述電漿處理單元300與收集器100的後端連通，以通過電漿處理使製程副産物分解。電漿處理單元300可包含：反應器310，其與電漿處理單元連通以提供製程副産物流動穿過的流動空間；電漿産生器320，其安裝在反應器310輸出處以向流動穿過反應器310內部的製程副産物施加活化能；以及電源，其對電漿産生器320供電。電漿處理單元300可安置在收集器100的後端上以與排放管線50連通。或者，電漿處理單元300可直接連接到收集器100的後端。Referring to FIG. 6, the apparatus 10 for processing by-products according to an exemplary embodiment may further include a plasma processing unit 300 that communicates with a rear end of the collector 100 to enable the process through the plasma processing Decomposition of by-products. The plasma processing unit 300 may include: a reactor 310 that communicates with the plasma processing unit to provide a flow space through which process by-products flow; and a plasma generator 320 that is installed at the output of the reactor 310 to flow through the reactor toward the flow Process byproducts inside 310 apply activation energy; and a power source that powers the plasma generator 320. A plasma processing unit 300 may be disposed on a rear end of the collector 100 to communicate with the discharge line 50. Alternatively, the plasma processing unit 300 may be directly connected to the rear end of the collector 100.

反應器310可與收集器外殼110連通以提供製程副産物流動穿過的流動空間。反應器310可由例如石英（即，陶瓷）等介電材料所組成。反應器310可具有中空形狀，其中內壁從排放管線50或收集器外殼110的內壁延伸。The reactor 310 may be in communication with the collector housing 110 to provide a flow space through which process byproducts flow. The reactor 310 may be composed of a dielectric material such as quartz (ie, ceramic). The reactor 310 may have a hollow shape with an inner wall extending from the inner wall of the exhaust line 50 or the collector housing 110.

電漿産生器320向流動穿過反應器310內部的製程副産物施加活化能。電漿産生器320可包含圍繞反應器310的電感耦合電漿（inductively coupled plasma，ICP）以改進電漿密度。此處，ICP線圈310鄰近反應器310的側壁安置於反應器310外部。ICP線圈可具有多個匝（turns）。在此情况下，匝中的每一個可彼此平行布置。The plasma generator 320 applies activation energy to process by-products flowing through the interior of the reactor 310. The plasma generator 320 may include an inductively coupled plasma (ICP) surrounding the reactor 310 to improve the plasma density. Here, the ICP coil 310 is disposed outside the reactor 310 adjacent to the side wall of the reactor 310. The ICP coil may have multiple turns. In this case, each of the turns may be arranged parallel to each other.

電源對電漿産生器320供電。此處，電源可産生RF功率且通過充分匹配網絡連接到ICP線圈。當RF功率從電源供應到ICP線圈時，誘發的電漿被誘發到反應器310中。並且，電漿處理單元300還可包含安裝在反應器310以及電漿産生器320外部的電漿處理單元外殼330。電漿處理單元外殼330可由與排放管線50相同的材料所組成，即，由具有優良耐熱性的不銹鋼（steel use stainless，SUS）材料所組成。因此，製程副産物流動穿過的流動空間可具有雙管結構以保護例如ICP線圈等結構、防止製程副産物向外泄漏和允許電漿處理單元外殼330接地，且由此防止從ICP線圈産生的電磁波向外輻射。The power source supplies power to the plasma generator 320. Here, the power source can generate RF power and is connected to the ICP coil through a well matched network. When RF power is supplied from the power source to the ICP coil, the induced plasma is induced into the reactor 310. In addition, the plasma processing unit 300 may further include a plasma processing unit housing 330 installed outside the reactor 310 and the plasma generator 320. The plasma processing unit housing 330 may be composed of the same material as the discharge line 50, that is, composed of a stainless steel (SUS) material having excellent heat resistance. Therefore, the flow space through which the process by-products flow may have a double-tube structure to protect structures such as ICP coils, prevent process by-products from leaking out to the outside, and allow the plasma processing unit housing 330 to be grounded, and thereby prevent electromagnetic waves generated from the ICP coil from Outside radiation.

電漿處理單元300從包含於製程副産物中的含有氧或氫的反應氣體以及未反應氣體中産生氧自由基或氫自由基，且通過使用氧電漿或氫電漿使製程副産物分解以及解離而使製程副産物電離。也就是說，反應器310的內部由於排放管線50的結構而具有對應於製程腔室40的壓力。電漿可在類似於製程腔室40的條件的條件下，從包含於從製程腔室40排出的製程副産物中的含有氧或氫的反應氣體以及未反應氣體中産生。The plasma processing unit 300 generates oxygen radicals or hydrogen radicals from the reaction gas and unreacted gas containing oxygen or hydrogen contained in the by-products of the process, and decomposes and dissociates the by-products of the process by using an oxygen plasma or a hydrogen plasma. Ionize process by-products. That is, the inside of the reactor 310 has a pressure corresponding to the process chamber 40 due to the structure of the discharge line 50. Plasma may be generated from a reaction gas containing oxygen or hydrogen and unreacted gas contained in a process by-product discharged from the process chamber 40 under conditions similar to those of the process chamber 40.

在根據示範性實施例的用於處理製程副産物的設備10中，可通過收集器100收集製程副産物，且接著在排出大量製程副産物的灰化製程中對其進行初步處理。這樣做是因爲防止製程副産物積聚的效果不足以對大量製程副産物進行直接加熱（所述大量製程副産物由於産生大量製程副産物的灰化製程的特性而未收集），並且，難以防止排放管線50的內壁或閥60的內部受到污染。In the apparatus 10 for processing a process by-product according to an exemplary embodiment, the process by-product may be collected by the collector 100 and then subjected to preliminary processing in an ashing process in which a large amount of the process by-product is discharged. This is done because the effect of preventing the accumulation of process by-products is not sufficient to directly heat a large number of process by-products (which are not collected due to the characteristics of the ashing process that generates a large number of process by-products), and it is difficult to prevent the The inside of the wall or valve 60 is contaminated.

因此，收集器100可控制製程副産物的流動路徑，以允許製程副産物沿著排放管線50的中心部分流動，且由此經由收集器100最小化製程副産物沿著安裝在後端上的排放管線50、加熱器200或電漿處理單元300的內壁的流動，由此防止製程副産物積聚在排放管線50、加熱器200或電漿處理單元300的內壁中。Therefore, the collector 100 can control the flow path of the process by-products to allow the process by-products to flow along the central portion of the discharge line 50, and thereby minimize the process by-products along the discharge line 50 installed on the back end via the collector 100, The inner wall of the heater 200 or the plasma processing unit 300 flows, thereby preventing process by-products from accumulating in the inner wall of the discharge line 50, the heater 200, or the plasma processing unit 300.

並且，儘管上述加熱器200或電漿處理單元300安裝在收集器100的後端上或連接到收集器100的後端的排放管線50上，但加熱器200以及電漿處理單元300可相繼安裝在收集器100的後端上，或電漿處理單元300以及加熱器200可相繼安裝在收集器100的後端上。另外，加熱器200或電漿處理單元300可直接安裝在閥60的前端上以有效地防止製程副産物在穿過閥60時積聚在閥60中，所述製程副産物由加熱器200進行加熱或由電漿處理單元300分解以及解離。Also, although the heater 200 or the plasma processing unit 300 described above is installed on the rear end of the collector 100 or the discharge line 50 connected to the rear end of the collector 100, the heater 200 and the plasma processing unit 300 may be sequentially installed on The rear end of the collector 100 or the plasma processing unit 300 and the heater 200 may be sequentially installed on the rear end of the collector 100. In addition, the heater 200 or the plasma processing unit 300 may be directly installed on the front end of the valve 60 to effectively prevent process by-products from accumulating in the valve 60 when passing through the valve 60, and the process by-products are heated by the heater 200 or by The plasma processing unit 300 decomposes and dissociates.

根據示範性實施例的用於處理副産物的設備10還可包含控制單元（未繪示），所述控制單元確認用於控制製程腔室40的壓力的閥60的切換信息，以確定收集器100的更換期。此處，使閥板62旋轉以控制製程腔室40的壓力且由此精細地控制壓力的節流閥可用作閥60。控制單元可通過以下方式確定收集器100的更換期：將在先前過程中所測量的閥板62的旋轉角與在目前過程中所測量的閥板62的旋轉角進行比較。The apparatus 10 for processing by-products according to an exemplary embodiment may further include a control unit (not shown) that confirms switching information of the valve 60 for controlling the pressure of the process chamber 40 to determine the collector 100 Replacement period. Here, a throttle valve that rotates the valve plate 62 to control the pressure of the process chamber 40 and thereby finely control the pressure may be used as the valve 60. The control unit may determine the replacement period of the collector 100 by comparing the rotation angle of the valve plate 62 measured in the previous process with the rotation angle of the valve plate 62 measured in the current process.

以下將詳細描述用於相對於控制單元確定收集器100的更換期的方法。The method for determining the replacement period of the collector 100 with respect to the control unit will be described in detail below.

圖7是繪示用於控制壓力的閥板的旋轉角的變化的視圖。FIG. 7 is a view illustrating a change in a rotation angle of a valve plate for controlling pressure.

參考圖7，根據示範性實施例的用於測定收集器100的更換期的方法可以是測定如下收集器100的更換期的方法，所述收集器100通過在製程腔室40與用於控制製程腔室40的壓力的閥60之間安裝排放管線50，而收集從製程腔室40排出的副産物。用於測定收集器100的更換期的方法包含：根據製程腔室40的壓力確認閥60的當前位置值的過程；計算出閥60的當前位置值的變化的過程，所述變化是根據在先前過程中所測量的閥60的位置值所測量；以及通過計算出在預設臨界值內的重複變化次數來測定收集器100的更換期的過程。Referring to FIG. 7, a method for determining a replacement period of the collector 100 according to an exemplary embodiment may be a method of determining a replacement period of the collector 100 by using the process chamber 40 and a process for controlling the process. A discharge line 50 is installed between the pressure valves 60 of the chamber 40 to collect by-products discharged from the process chamber 40. The method for determining the replacement period of the collector 100 includes: a process of confirming the current position value of the valve 60 according to the pressure of the process chamber 40; and a process of calculating a change in the current position value of the valve 60 according to the previous The position value of the valve 60 measured during the process is measured; and the process of determining the replacement period of the collector 100 is calculated by calculating the number of repeated changes within a preset threshold.

一般來說，用於在半導體製造設備中執行製程的製程腔室40中的製程條件可根據不同製程而改變。通過安裝在排放管線50上的閥60執行對製程腔室40的製程條件當中的製程壓力的控制。通過開-關操作執行切換的閘閥或通過使閥板62在閥外殼64中旋轉而控制切換程度的節流閥可用作閥60。爲了精細地控制壓力，節流閥連接到排放管線50。In general, the process conditions in the process chamber 40 for performing a process in a semiconductor manufacturing facility may be changed according to different processes. Control of the process pressure among the process conditions of the process chamber 40 is performed by a valve 60 installed on the discharge line 50. A gate valve that performs switching by an on-off operation or a throttle that controls the degree of switching by rotating the valve plate 62 in the valve housing 64 may be used as the valve 60. To finely control the pressure, a throttle valve is connected to the discharge line 50.

爲了測定收集器100的更換期，首先根據製程腔室40的壓力確認閥60的當前位置值（圖7的實線）。就節流閥來說，閥60的位置值代表閥板62的角度值。對此，可提供能够根據製程腔室40的設定壓力值來測定閥板62的位置的監視傳感器（未繪示）。In order to determine the replacement period of the collector 100, the current position value of the valve 60 is first confirmed according to the pressure of the process chamber 40 (the solid line in FIG. 7). In the case of a throttle valve, the position value of the valve 60 represents the angle value of the valve plate 62. For this, a monitoring sensor (not shown) capable of measuring the position of the valve plate 62 based on the set pressure value of the process chamber 40 may be provided.

其後，計算出閥60的當前位置值（圖7的實線）的變化θ，所述變化是根據在先前過程中所測量的閥60的位置值（圖7的虛線）所測量。此處，在先前過程中所測量的閥60的位置值（圖7的虛線）代表剛好在更換收集器100之後所測量的閥60的位置值，即，閥板62的角度值。Thereafter, a change θ of the current position value of the valve 60 (the solid line in FIG. 7) is calculated, which is measured based on the position value of the valve 60 (the broken line in FIG. 7) measured in the previous process. Here, the position value of the valve 60 measured in the previous process (the dotted line in FIG. 7) represents the position value of the valve 60 measured immediately after the collector 100 is replaced, that is, the angle value of the valve plate 62.

也就是說，通過排放管線50從製程腔室40排出的製程副産物在穿過溫度相對低的排放管線50時凝結在排放管線50中，且因此以粉末或具有黏性性質的聚合物的形式而積聚。在根據示範性實施例的用於處理製程副産物的設備10中，如上文所描述，所述設備可防止製程副産物積聚在收集器100中，並且還防止製程副産物融合且積聚在排放管線50、加熱器200以及電漿處理單元300的內壁中。That is, the process by-products discharged from the process chamber 40 through the discharge line 50 are condensed in the discharge line 50 when passing through the relatively low-temperature discharge line 50, and thus are in the form of a powder or a polymer having viscous properties. build up. In the apparatus 10 for processing process by-products according to an exemplary embodiment, as described above, the apparatus may prevent process by-products from accumulating in the collector 100 and also prevent process by-products from merging and accumulating in the discharge line 50, heating Device 200 and the inner wall of the plasma processing unit 300.

因此，在先前過程中所測量的閥60的位置值（圖7的虛線）與閥60的所測量當前位置值（圖7的實線）的變化θ對應於由於製程副産物積聚在收集器100中而産生的用於控制製程腔室40的設定壓力的壓力變化。也就是說，當剛好在更換收集器100之後確認用於將製程腔室40的壓力控制爲設定壓力的閥板62的角度值（圖7的虛線），並且在製程副産物通過排放製程的執行而積聚在收集器100中之後在同一過程下將製程腔室40控制爲設定壓力時，閥板62的角度由於製程副産物積聚在收集器100中會具有更大的值（圖7的虛線）。因此，在計算出了閥60的當前位置值的變化θ（所述變化是根據在先前過程中所測量的閥60的位置值所測量）時，可預測積聚在收集器100中的製程副産物的量。Therefore, the change θ of the position value of the valve 60 measured in the previous process (the dotted line in FIG. 7) and the measured current position value of the valve 60 (the solid line in FIG. 7) corresponds to the accumulation of the by-products in the collector 100 due to the process. The resulting pressure change is used to control the set pressure of the process chamber 40. That is, the angle value of the valve plate 62 for controlling the pressure of the process chamber 40 to a set pressure is confirmed immediately after the collector 100 is replaced (the dotted line in FIG. 7), and the by-products of the process are performed by the discharge process When the process chamber 40 is controlled to a set pressure under the same process after accumulating in the collector 100, the angle of the valve plate 62 will have a larger value due to the accumulation of process by-products in the collector 100 (dashed lines in FIG. 7). Therefore, when the change θ of the current position value of the valve 60 (measured based on the position value of the valve 60 measured in the previous process) is calculated, the process by-products accumulated in the collector 100 can be predicted the amount.

其後，計算出在設定臨界值內的閥60的所測量位置值（圖7的虛線）與閥60的所測量當前位置值（圖7的實線）的重複變化次數以確定收集器100的更換期。Thereafter, the number of repeated changes of the measured position value of the valve 60 (the dotted line in FIG. 7) and the measured current position value of the valve 60 (the solid line in FIG. 7) within the set critical value is calculated to determine the Replacement period.

舉例來說，當用於在更換收集器100之後將製程腔室40的壓力控制爲設定壓力的閥板62的角度爲20°時，用於在預定量的製程副産物通過排放而積聚在收集器100中之後將製程腔室40的壓力控制爲同一設定壓力的閥板62的角度可爲25°。此處，當最大誤差值（即，用於將製程腔室40的壓力控制爲設定壓力的臨界值）的角度被設定爲30°時，收集器100的更換期可被設定成使得在通過以下方式執行六次所述過程之後更換收集器100：計算出閥板62的當前角度值（30°）的變化（5°）（所述變化是根據在先前過程中所測量的閥板62的角度值（25°）所測量），以及計算出在設定臨界值（30°）內的重複變化次數。For example, when the angle of the valve plate 62 for controlling the pressure of the process chamber 40 to a set pressure after the collector 100 is changed is 20 °, a predetermined amount of process by-products are accumulated in the collector by being discharged. After 100, the angle of the valve plate 62 that controls the pressure of the process chamber 40 to the same set pressure may be 25 °. Here, when the angle of the maximum error value (that is, a threshold value for controlling the pressure of the process chamber 40 to a set pressure) is set to 30 °, the replacement period of the collector 100 may be set such that the following Replace the collector 100 after performing the process six times: Calculate the change (5 °) of the current angle value (30 °) of the valve plate 62 (the change is based on the angle of the valve plate 62 measured in the previous process Value (25 °), and the number of repeated changes within a set threshold (30 °).

在用於處理副産物的設備10以及用於使用所述設備10確定收集器100的更換期的方法中，中空的收集結構120可安裝在收集器外殼110中，從而使得與製程副産物的接觸面積以及製程副産物的流動路徑增大，且收集結構120可控制製程副産物的流動路徑，以有效地收集製程副産物並且還防止製程副産物融合在排放管線50的內壁上。In the apparatus 10 for processing by-products and a method for using the apparatus 10 to determine the replacement period of the collector 100, a hollow collection structure 120 may be installed in the collector housing 110, so that the contact area with the process by-products and The flow path of the process by-product is increased, and the collection structure 120 may control the flow path of the process by-product to effectively collect the process by-product and also prevent the process by-product from fusing on the inner wall of the discharge line 50.

並且，由收集結構120將流動路徑控制到排放管線50的中心部分的製程副産物可由安裝在收集器100的後端處的電漿處理單元300分解並解離，以更有效地防止製程副産物積聚在排放管線50以及調節製程腔室40的壓力的閥60中。Also, the process by-products whose flow path is controlled by the collection structure 120 to the center portion of the discharge line 50 can be decomposed and dissociated by the plasma processing unit 300 installed at the rear end of the collector 100 to more effectively prevent the accumulation of process by-products in the discharge Line 50 and a valve 60 that regulates the pressure in the process chamber 40.

另外，有可能易於通過檢查用於控制製程腔室40的壓力的閥40的位置來確定製程副産物積聚在其中的收集器100的更換時間，由此便於維護以及管理製程設備且提高生産率。In addition, it is possible to easily determine the replacement time of the collector 100 in which process by-products are accumulated by checking the position of the valve 40 for controlling the pressure of the process chamber 40, thereby facilitating maintenance and management of the process equipment and improving productivity.

在根據示範性實施例的用於處理副産物的設備以及用於使用所述設備確定收集器的更換期的方法中，中空的收集結構可安裝在收集器外殼中，從而使得與製程副産物的接觸面積以及製程副産物的流動路徑增大，且收集結構可控制製程副産物的流動路徑，以有效地收集製程副産物並且還防止製程副産物融合在排放管線的內壁上。In an apparatus for processing by-products and a method for determining a replacement period of a collector using the apparatus according to an exemplary embodiment, a hollow collection structure may be installed in a collector housing so that a contact area with a process by-product is obtained And the flow path of the process by-product is increased, and the collection structure can control the flow path of the process by-product to effectively collect the process by-product and also prevent the process by-product from being fused on the inner wall of the discharge pipeline.

並且，由收集結構將流動路徑控制到排放管線的中心部分的製程副産物可由安裝在收集器的後端上的加熱器進行加熱而變成氣態，或者由安裝在收集器的後端上的電漿處理單元通過分解以及解離而進行電離，以更有效地防止製程副産物積聚在排放管線以及控制製程腔室的壓力的閥中。And, the by-products of the process in which the flow path is controlled by the collection structure to the central portion of the discharge line can be heated to be gaseous by a heater installed on the rear end of the collector, or processed by a plasma installed on the rear end of the collector The unit ionizes by decomposition and dissociation to more effectively prevent process by-products from accumulating in the discharge line and the valve that controls the pressure in the process chamber.

另外，有可能易於通過檢查用於控制製程腔室的壓力的閥的位置來確定製程副産物積聚在其中的收集器的更換時間，由此便於維護以及管理製程設備且提高生産率。In addition, it is possible to easily determine the replacement time of the collector in which process by-products are accumulated by checking the position of a valve for controlling the pressure of the process chamber, thereby facilitating maintenance and management of the process equipment and improving productivity.

儘管通過使用具體術語來描述以及繪示具體實施例，但術語僅僅是用於明確解釋實施例的實例，且因此對本領域的技術人員顯而易見的是在不改變技術理念或基本特徵的情况下可以其它具體形式以及變化來執行實施例以及技術術語。因此，應理解根據本發明的實施例的簡單更改可屬本發明的技術精神。Although specific embodiments are described and illustrated by using specific terms, the terms are merely examples for clearly explaining the embodiments, and therefore it is obvious to those skilled in the art that other embodiments may be changed without changing the technical idea or basic features. Specific forms and variations are used to implement embodiments and technical terms. Therefore, it should be understood that simple modifications according to the embodiments of the present invention may belong to the technical spirit of the present invention.

10‧‧‧用於處理製程副産物的設備10‧‧‧ Equipment for processing by-products

40‧‧‧製程腔室40‧‧‧Process Chamber

50‧‧‧排放管線50‧‧‧ discharge pipeline

60‧‧‧閥60‧‧‧ valve

62‧‧‧閥板62‧‧‧Valve plate

64‧‧‧閥外殼64‧‧‧valve housing

70‧‧‧真空泵70‧‧‧vacuum pump

100‧‧‧收集器100‧‧‧ Collector

110‧‧‧收集器外殼110‧‧‧ collector housing

112‧‧‧密封槽112‧‧‧Sealed Groove

118‧‧‧密封構件118‧‧‧sealing member

120‧‧‧中空收集結構120‧‧‧ hollow collection structure

122‧‧‧第三收集結構122‧‧‧ Third Collection Structure

124‧‧‧第二收集結構124‧‧‧Second Collection Structure

126‧‧‧第一收集結構126‧‧‧The first collection structure

130‧‧‧冷却管線130‧‧‧cooling pipeline

200‧‧‧加熱器200‧‧‧ heater

210‧‧‧加熱器外殼210‧‧‧heater housing

220‧‧‧加熱護套220‧‧‧Heating jacket

300‧‧‧電漿處理單元300‧‧‧ Plasma processing unit

310‧‧‧反應器310‧‧‧ Reactor

320‧‧‧電漿産生器320‧‧‧ Plasma Generator

330‧‧‧電漿處理單元外殼330‧‧‧ Plasma processing unit housing

通過結合附圖進行的以下描述可更詳細地理解示範性實施例，其中： 圖1是用於解釋根據示範性實施例的用於處理製程副産物的設備連接到製程腔室的狀態的視圖。 圖2是繪示根據示範性實施例的正安裝收集器的狀態的示意圖。 圖3是繪示根據示範性實施例的收集器的收集結構的示意圖。 圖4是繪示根據示範性實施例的正安裝冷却管線的狀態的示意圖。 圖5是繪示根據示範性實施例的正安裝加熱器的狀態的示意圖。 圖6是繪示根據示範性實施例的正安裝電漿處理單元的狀態的示意圖。 圖7是繪示用於控制壓力的閥板的旋轉角的變化的視圖。Exemplary embodiments can be understood in more detail through the following description taken in conjunction with the accompanying drawings, in which: FIG. 1 is a view for explaining a state where an apparatus for processing a process by-product is connected to a process chamber according to an exemplary embodiment. FIG. 2 is a schematic diagram illustrating a state where a collector is being installed according to an exemplary embodiment. FIG. 3 is a schematic diagram illustrating a collecting structure of a collector according to an exemplary embodiment. FIG. 4 is a schematic diagram illustrating a state where a cooling line is being installed according to an exemplary embodiment. FIG. 5 is a schematic diagram illustrating a state where a heater is being installed according to an exemplary embodiment. FIG. 6 is a schematic diagram illustrating a state where a plasma processing unit is being installed according to an exemplary embodiment. FIG. 7 is a view illustrating a change in a rotation angle of a valve plate for controlling pressure.

Claims (15)

一種用於處理製程副産物的設備，其中所述設備包括收集器，所述收集器安裝在製程腔室與被配置成所述製程腔室的壓力的閥之間的排放管線上，以收集從所述製程腔室排出的所述製程副産物， 其中所述收集器包括： 收集器外殼，所述收集器外殼與所述排放管線連通；以及 中空的收集結構，安裝在所述收集器外殼中以收集所述製程副産物，且被配置成控制所述製程副産物的流動路徑。An apparatus for processing process by-products, wherein the apparatus includes a collector installed on a discharge line between a process chamber and a valve configured as a pressure of the process chamber to collect The process by-product discharged from the process chamber, wherein the collector includes: a collector housing, the collector housing being in communication with the discharge line; and a hollow collection structure installed in the collector housing to collect The process by-product is configured to control a flow path of the process by-product. 如申請專利範圍第1項所述的用於處理製程副産物的設備，其中所述收集結構具有從所述收集器外殼的流入孔到排出孔逐漸减小的橫截面積。The apparatus for processing by-products according to item 1 of the scope of patent application, wherein the collection structure has a gradually decreasing cross-sectional area from an inflow hole to a discharge hole of the collector housing. 如申請專利範圍第1項所述的用於處理製程副産物的設備，其中設置多個所述收集結構以提供具有彼此不同的橫截面積的流動路徑，並且 多個所述收集結構被安置成從所述排放管線的中心部分向外隔開。The apparatus for processing a by-product of a process as set forth in claim 1, wherein a plurality of said collecting structures are provided to provide a flow path having a cross-sectional area different from each other, and a plurality of said collecting structures are disposed to A central portion of the discharge line is spaced outward. 如申請專利範圍第1項所述的用於處理製程副産物的設備，其中所述收集器還包括經由所述收集器外殼以及所述收集結構安裝的冷却管線。The apparatus for processing by-products according to item 1 of the patent application scope, wherein the collector further comprises a cooling line installed via the collector housing and the collection structure. 如申請專利範圍第1項所述的用於處理製程副産物的設備，其中所述收集器可更換地安裝。The apparatus for processing a by-product of a process as described in item 1 of the scope of patent application, wherein the collector is replaceably installed. 如申請專利範圍第1項所述的用於處理製程副産物的設備，還包括加熱器，所述加熱器與所述收集器的後端連通，以對所述製程副産物進行加熱。The apparatus for processing a process by-product according to item 1 of the scope of patent application, further comprising a heater, the heater being in communication with the rear end of the collector to heat the process by-product. 如申請專利範圍第1項所述的用於處理製程副産物的設備，還包括電漿處理單元，所述電漿處理單元與所述收集器的後端連通，以對所述製程副産物進行電漿處理且由此使所述製程副産物分解。The device for processing by-products according to item 1 of the scope of patent application, further comprising a plasma processing unit, which is in communication with the back end of the collector to perform plasma processing on the by-products of the process Process and thereby decompose the process by-products. 如申請專利範圍第7項所述的用於處理製程副産物的設備，其中所述電漿處理單元包括： 反應器，所述反應器與所述收集器外殼連通，以提供所述製程副産物流動穿過的流動空間； 電漿産生器，所述電漿産生器安裝在所述反應器外部，以向流動穿過所述反應器的內部的所述製程副産物施加活化能；以及 電源，所述電源被配置成對所述電漿産生器供電。The apparatus for processing process by-products according to item 7 of the scope of patent application, wherein the plasma processing unit includes: a reactor, the reactor is in communication with the collector shell to provide the process by-products flow through Passing flow space; a plasma generator installed outside the reactor to apply activation energy to the process by-products flowing through the interior of the reactor; and a power source, the power source Configured to power the plasma generator. 如申請專利範圍第8項所述的用於處理製程副産物的設備，其中所述電漿産生器包括圍繞所述反應器的電感耦合電漿（ICP）線圈。The apparatus for processing a by-product of a process according to item 8 of the patent application scope, wherein the plasma generator includes an inductively coupled plasma (ICP) coil surrounding the reactor. 如申請專利範圍第1項所述的用於處理製程副産物的設備，還包括控制單元，所述控制單元被配置成確認所述閥的切換程度，以確定所述收集器的更換期。The apparatus for processing a by-product of a process according to item 1 of the scope of patent application, further comprising a control unit configured to confirm a degree of switching of the valve to determine a replacement period of the collector. 如申請專利範圍第10項所述的用於處理製程副産物的設備，其中所述閥包括節流閥，所述節流閥被配置成使閥板旋轉且由此控制所述製程腔室的所述壓力，並且 所述控制單元將在先前過程中所測量的所述閥板的旋轉角與在當前過程中所測量的所述閥板的旋轉角進行比較，以確定所述收集器的所述更換期。The apparatus for processing a by-product of a process as set forth in claim 10, wherein the valve includes a throttle valve configured to rotate a valve plate and thereby control a process chamber of the process chamber. The pressure, and the control unit compares the rotation angle of the valve plate measured in the previous process with the rotation angle of the valve plate measured in the current process to determine the Replacement period. 如申請專利範圍第1項至第11項中任一項所述的用於處理製程副産物的設備，其中所述製程副産物含有碳（C）、氫（N）以及氧（O）中的至少一種元素。The apparatus for treating a by-product of a process according to any one of claims 1 to 11, wherein the by-product of the process contains at least one of carbon (C), hydrogen (N), and oxygen (O) element. 一種用於確定收集器的更換期的方法，其中所述收集器安裝在製程腔室與被配置成所述製程腔室的壓力的閥之間的排放管線上，以收集從所述製程腔室排出的製程副産物，所述方法包括： 根據所述製程腔室的壓力來確認所述閥的當前位置值； 根據在先前過程中所測量的所述閥的位置值，計算出所述閥的經確認所述當前位置值的變化；以及 計算出在設定臨界值內的重複變化次數，以確定所述收集器的所述更換期。A method for determining a replacement period of a collector, wherein the collector is installed on a drain line between a process chamber and a valve configured as a pressure of the process chamber to collect from the process chamber The discharged process by-product, the method includes: confirming a current position value of the valve according to the pressure of the process chamber; and calculating a valve's process position based on the position value of the valve measured in a previous process. Confirm the change of the current position value; and calculate the number of repeated changes within a set threshold to determine the replacement period of the collector. 如申請專利範圍第13項所述的用於確定收集器的更換期的方法，其中所述閥包括節流閥，所述節流閥被配置成使閥板旋轉且由此控制所述製程腔室的所述壓力，並且 所述閥的所述位置值包括所述閥板的角度值。The method for determining a replacement period of a collector according to item 13 of the scope of patent application, wherein the valve includes a throttle valve configured to rotate a valve plate and thereby control the process chamber The pressure of the chamber, and the position value of the valve includes an angle value of the valve plate. 如申請專利範圍第13項所述的用於確定收集器的更換期的方法，其中在所述先前過程中所測量的所述閥的所述位置值包括剛好在更換所述收集器之後所測量的所述閥的位置值。The method for determining a replacement period of a collector according to item 13 of the patent application scope, wherein the position value of the valve measured in the previous process includes a measurement immediately after the collector is replaced The position value of the valve.
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