TW201807232A - Magnetic target cathode device with high rate of target utilization capable of effectively increasing the rate of target utilization by enlarging the area of a bombardment surface - Google Patents
Magnetic target cathode device with high rate of target utilization capable of effectively increasing the rate of target utilization by enlarging the area of a bombardment surface Download PDFInfo
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本發明是有關於一種靶材陰極裝置，特別是指一種具高靶材利用率之磁性靶材陰極裝置。The invention relates to a target cathode device, in particular to a magnetic target cathode device with high target utilization rate.
在現行的一磁控濺鍍系統(magnetron sputtering system)之非磁性靶材陰極裝置中，其主要是透過一架設於一耦合板(coupling plate)上的永久磁鐵(permanent magnets)組以提供該磁控濺鍍系統在運作時所需的磁場，令該永久磁鐵組所產生的磁力線朝上穿越過該永久磁鐵組上方的一非磁性靶材的一轟擊面，從而在該非磁性靶材的轟擊面上形成環形的封閉磁力線，有利於提升靶材利用率與鍍膜速率。In the current non-magnetic target cathode device of a magnetron sputtering system, it mainly provides the magnet through a set of permanent magnets mounted on a coupling plate. The magnetic field required by the sputtering control system during operation causes the magnetic lines of force generated by the permanent magnet group to pass upward through a bombardment surface of a non-magnetic target above the permanent magnet group, and thus on the bombardment surface of the non-magnetic target. A closed closed magnetic field line is formed on the upper surface, which is conducive to improving target utilization and coating rate.
然而，基於鐵磁性靶材本身是由一導磁率(permeability)高的鐵磁性材料所構成。一旦該永久磁鐵組上方的非磁性靶材是改由一鐵磁性靶材來取代時，該永久磁鐵組所產生的磁力線將因該鐵磁性靶材之高導磁率而難以穿越其一轟擊面，導致該對永久磁鐵上方的磁力線僅能集中在該鐵磁性靶材內，並因此降低該磁控濺鍍系統的濺鍍效率。為改善前述問題，本發明所屬技術領域中的相關技術人員是於該鐵磁性靶材中形成多數溝槽或穿孔，以透過該鐵磁性靶材的溝槽或穿孔令該永久磁鐵組所產生的磁力線得以穿越該鐵磁性靶材的轟擊面，以於該轟擊面上形成環形的封閉磁力線。However, the ferromagnetic-based target itself is composed of a ferromagnetic material having a high permeability. Once the non-magnetic target above the permanent magnet group is replaced by a ferromagnetic target, the magnetic field lines generated by the permanent magnet group will be difficult to cross a bombardment surface due to the high magnetic permeability of the ferromagnetic target. As a result, the magnetic field lines above the pair of permanent magnets can only be concentrated in the ferromagnetic target, and thus the sputtering efficiency of the magnetron sputtering system is reduced. In order to improve the foregoing problems, a person skilled in the art in the technical field to which the present invention pertains forms a plurality of grooves or perforations in the ferromagnetic target, so that the permanent magnet group is generated through the grooves or perforations of the ferromagnetic target. The magnetic field lines can pass through the bombardment surface of the ferromagnetic target to form a closed closed magnetic field line on the bombardment surface.
參閱圖1與圖2，美國第2011/0186421 A1早期公開號專利案(以下稱前案1)公開一種磁性濺鍍靶材陰極裝置1，其包含一磁石單元(圖未示)、一設置於該磁石單元上且是由銅(Cu)所製成的非磁性支撐板11，及一設置於該非磁性支撐板11上的鐵磁性靶材單元12；其中，該磁石單元包括一磁座及一架設於該磁座上的永久磁鐵組。該鐵磁性靶材單元12包括一內側靶材121、一間隔地圍繞該內側靶材121的內環靶材122，及一間隔地圍繞該內環靶材122的外環靶材123。Referring to FIG. 1 and FIG. 2, the U.S. Publication No. 2011/0186421 A1 Early Publication No. (hereinafter referred to as the former case 1) discloses a magnetic sputtering target cathode device 1 including a magnet unit (not shown), The magnet unit is a non-magnetic support plate 11 made of copper (Cu), and a ferromagnetic target unit 12 disposed on the non-magnetic support plate 11; wherein, the magnet unit includes a magnetic base and a A permanent magnet set erected on the magnetic base. The ferromagnetic target unit 12 includes an inner target 121, an inner ring target 122 surrounding the inner target 121 at intervals, and an outer ring target 123 surrounding the inner ring at intervals 122.
該前案1主要是利用彼此間隔設置之該內側靶材121、該內環靶材122與該外環靶材123三者間所形成的兩道迷宮狀狹縫100，以令該永久磁鐵組(圖未示)所產生的磁力線穿越該鐵磁性靶材單元12。雖然該前案1可透過該等迷宮狀狹縫100令磁力線穿越該鐵磁性靶材單元12；然而，絕大多數的磁力線卻僅能分布在該內環靶材122的一內緣與一外緣，其無法有效地橫跨過該內環靶材122之一轟擊面124並均勻分布，故無法有效提升該內環靶材122的利用率。The former case 1 mainly uses two labyrinth-shaped slits 100 formed between the inner target 121, the inner ring target 122 and the outer ring target 123 spaced from each other to make the permanent magnet group (Not shown) the generated magnetic field lines pass through the ferromagnetic target unit 12. Although the former case 1 can make the magnetic field lines pass through the ferromagnetic target unit 12 through the labyrinth-shaped slits 100; however, most of the magnetic field lines can only be distributed on an inner edge and an outer side of the inner ring target 122 Because it cannot effectively cross one of the bombardment surfaces 124 of the inner ring target 122 and evenly distribute it, it cannot effectively improve the utilization rate of the inner ring target 122.
參閱圖3、圖4與圖5，美國第4,572,776核准公告號專利案(以下稱前案2)公開一種鐵磁性靶材陰極裝置2，其包含一基座單元21、一非磁性密封金屬板22，及一鐵磁性靶材單元23。該基座單元21包括一具有一環形冷卻通道210的座體211、一對間隔設置於該環形冷卻通道210內的磁性軛鐵(magnet yoke)212，及一組位於該等磁性軛鐵212上的永久磁鐵213。該非磁性密封金屬板22是覆蓋於該座體211之一頂緣以封閉該環形冷卻通道210。該鐵磁性靶材單元23包括一內側靶材231、一圍繞該內側靶材231的內環靶材232，及一圍繞該內環靶材232的外環靶材233。該內側靶材231與該外環靶材233分別具有一用以將該內環靶材232固定於該非磁性密封金屬板22上的非磁性間隔部(nonmagnetic spacer)2311、2331、一位於各非磁性間隔部2311、2331內的基部2312、2332，及一位於各基部2312、2332之一頂緣的磁極部2313、2333，且該內側靶材231之磁極部2313與該外環靶材233之磁極部2333是分別朝外與朝內延伸，並與該內環靶材232之一轟擊面2321間分別形成一間隙2310、2330。3, 4 and 5, U.S. Patent No. 4,572,776 approval (hereinafter referred to as the former case 2) discloses a ferromagnetic target cathode device 2, which includes a base unit 21, a non-magnetic sealed metal plate 22 , And a ferromagnetic target unit 23. The base unit 21 includes a base body 211 having an annular cooling channel 210, a pair of magnetic yoke 212 disposed at intervals in the annular cooling channel 210, and a group of magnetic yoke 212 located on the magnetic yoke 212. Of permanent magnets 213. The non-magnetic sealed metal plate 22 covers a top edge of the base 211 to close the annular cooling channel 210. The ferromagnetic target unit 23 includes an inner target 231, an inner ring target 232 surrounding the inner target 231, and an outer ring target 233 surrounding the inner ring target 232. The inner target 231 and the outer ring target 233 each have a nonmagnetic spacer 2311, 2331 and a non-magnetic spacer 2311 for fixing the inner ring target 232 to the non-magnetic sealing metal plate 22 The base portions 2312, 2332 in the magnetic spacers 2311, 2331, and a magnetic pole portion 2313, 2333 located at the top edge of each of the base portions 2312, 2332, and the magnetic pole portion 2313 of the inner target 231 and the outer ring target 233 The magnetic pole portions 2333 extend outward and inward, respectively, and form gaps 2310 and 2330 respectively with a bombardment surface 2321 of the inner ring target 232.
該前案2利用該內側靶材231之磁極部2313與該外環靶材233之磁極部2333除了可以引導自該等永久磁鐵213所產生的第二磁力線F2朝該內環靶材232之一內緣與一外緣分布外，其在該內環靶材232寬度不大的前提下，更可令該等永久磁鐵213所產生的第一磁力線F1橫跨過該內環靶材232的轟擊面2321，以藉此提高該內環靶材232的利用率。雖然該前案2可藉由該內側靶材231之磁極部2313與該外環靶材233之磁極部2333以提升該內環靶材232的利用率。然而，由圖4顯示可知，介於該內環靶材232之內緣與外緣間的轟擊面2321，其水平分量的磁場強度也僅有50 Oe左右，此對於提升該內環靶材232之利用率仍然有限。The former case 2 uses the magnetic pole portion 2313 of the inner target 231 and the magnetic pole portion 2333 of the outer ring target 233 except that the second magnetic field lines F2 generated from the permanent magnets 213 can be directed toward one of the inner ring targets 232. The inner edge and an outer edge are distributed outside, and under the premise that the inner ring target 232 is not wide, the first magnetic field lines F1 generated by the permanent magnets 213 can cross the bombardment of the inner ring target 232. The surface 2321 is used to improve the utilization rate of the inner ring target 232. Although the former case 2 can improve the utilization rate of the inner ring target 232 by using the magnetic pole portion 2313 of the inner target 231 and the magnetic pole portion 2333 of the outer ring target 233. However, it can be seen from FIG. 4 that the horizontal component magnetic field strength of the bombardment surface 2321 between the inner edge and the outer edge of the inner ring target 232 is only about 50 Oe. The utilization rate is still limited.
經上述說明可知，改良磁性靶材陰極裝置的結構並提升內環靶材的利用率，是此技術領域的相關技術人員有待努力的共同目標。It can be known from the above description that improving the structure of the magnetic target cathode device and increasing the utilization rate of the inner ring target are common goals for those skilled in the technical field to be worked on.
因此，本發明之目的，即在提供一種可提升靶材利用率的具高靶材利用率之磁性靶材陰極裝置。Therefore, the object of the present invention is to provide a magnetic target cathode device with high target utilization rate which can improve the target utilization rate.
於是，本發明具高靶材利用率之磁性靶材陰極裝置，其包含一背板，及一鐵磁性靶材單元。該背板包括一設置面。該鐵磁性靶材單元設置於該設置面上，並包括一內側靶材、一間隔地圍繞該內側靶材的內環靶材，及一間隔地圍繞該內環靶材的外環靶材。該內側靶材沿一長度方向延伸，並具有一位於該設置面的基部，及一自該基部之遠離該設置面的一端緣朝外凸伸以覆蓋該內環靶材之一內緣的延伸部。該內環靶材具有一位於該設置面的背面、一背向該背面的轟擊面、一自該背面背向該設置面凸伸的基部、一自該基部背向該內環靶材的背面凸伸的轟擊部，及至少一貫穿該背面與該轟擊面的環形狹縫，且該環形狹縫未能使該設置面自該轟擊面顯露，該轟擊部還朝該內側靶材與該外環靶材反向凸伸並連接該轟擊面。該外環靶材具有一位於該設置面的基部，及一自該基部之遠離該設置面的一端緣朝內凸伸以覆蓋該內環靶材之一外緣的延伸部。在本發明中，該內環靶材之背面沿一實質垂直於該長度方向之寬度方向具有一第一寬度W1 ，該內環靶材之轟擊面沿該寬度方向具有一第二寬度W2 ，且W2 ＞W1 ；該內環靶材之基部沿該內環靶材之一厚度方向具有一第一厚度H1 ，該內環靶材之轟擊部沿該厚度方向具有一第二厚度H2 ，且H2 ＞H1 。Therefore, the magnetic target cathode device with high target utilization rate of the present invention includes a back plate and a ferromagnetic target unit. The back plate includes a setting surface. The ferromagnetic target unit is disposed on the setting surface and includes an inner target, an inner ring target spaced around the inner target, and an outer ring target spaced around the inner ring target. The inner target extends along a length direction, and has a base located on the setting surface, and an extension protruding outward from an end edge of the base far from the setting surface to cover an inner edge of the inner ring target. unit. The inner ring target has a back surface located on the setting surface, a bombarding surface facing away from the back surface, a base portion protruding from the back surface facing the setting surface, and a back surface facing away from the inner ring target from the base portion. A protruding bombardment portion, and at least one annular slit penetrating the back surface and the bombardment surface, and the annular slit fails to expose the setting surface from the bombardment surface, and the bombardment portion also faces the inner target and the outer portion The ring target projects in the opposite direction and connects the bombardment surface. The outer ring target has a base portion on the setting surface, and an extending portion protruding inward from an end edge of the base portion away from the setting surface to cover an outer edge of the inner ring target. In the present invention, the back surface of the inner ring target has a first width W 1 along a width direction substantially perpendicular to the length direction, and the bombardment surface of the inner ring target has a second width W 2 along the width direction. And W 2 > W 1 ; the base portion of the inner ring target has a first thickness H 1 along a thickness direction of the inner ring target, and the bombardment portion of the inner ring target has a second thickness along the thickness direction H 2 , and H 2 > H 1 .
本發明之功效在於：令該內環靶材之轟擊面的第二寬度W2 大於其背面的第一寬度W1 ，且令該內環靶材之轟擊部的第二厚度H2 大於其基部的第一厚度H1 ，藉由增加該轟擊面的面積與轟擊部的體積有助於間接提升該內環靶材的利用率。The effect of the present invention is that the second width W 2 of the bombardment surface of the inner ring target is larger than the first width W 1 of the back surface thereof, and the second thickness H 2 of the bombardment portion of the inner ring target is larger than its base The first thickness H 1 of 1 is indirectly increasing the utilization rate of the inner ring target material by increasing the area of the bombardment surface and the volume of the bombardment portion.
在本發明被詳細描述之前，應當注意在以下的說明內容中，類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are represented by the same numbers.
如圖6、圖7與圖8所示，本發明具高靶材利用率之磁性靶材陰極裝置的一第一實施例主要是用來作為一磁控濺鍍系統的磁性靶材陰極裝置。本發明該第一實施例是在配合一架設於該第一實施例磁性靶材陰極裝置之一周緣的陽極裝置9的架構下，共同產生一高電壓差以產生電子，再碰撞該磁控濺鍍系統內的惰性氣體從而形成帶電氣體離子，帶電氣體離子在電磁場的作用下依據勞倫茲力(Lorentz force)轟擊該第一實施例之一內環靶材5的一轟擊面53，令該內環靶材5之轟擊面53的粒子被濺射出該轟擊面53從而鍍製於一基板(圖未示)上。在圖7與圖8中，該陽極裝置9是以假想線來表示。As shown in FIGS. 6, 7 and 8, a first embodiment of a magnetic target cathode device with high target utilization rate according to the present invention is mainly used as a magnetic target cathode device for a magnetron sputtering system. The first embodiment of the present invention cooperates with the structure of an anode device 9 mounted on one of the periphery of the magnetic target cathode device of the first embodiment to jointly generate a high voltage difference to generate electrons, and then collide with the magnetron sputtering The inert gas in the plating system forms charged gas ions. The charged gas ions bombard a bombardment surface 53 of the inner ring target 5 according to Lorentz force under the action of an electromagnetic field, so that the The particles of the bombardment surface 53 of the inner ring target 5 are sputtered out of the bombardment surface 53 to be plated on a substrate (not shown). In FIGS. 7 and 8, the anode device 9 is indicated by an imaginary line.
本發明該第一實施例包含一背板3、一鐵磁性靶材單元F、一導磁片7，及一磁石單元8。The first embodiment of the present invention includes a back plate 3, a ferromagnetic target unit F, a magnetically permeable sheet 7, and a magnet unit 8.
該背板3包括一設置面31，及一背向該設置面31的背面32。具體地來說，該磁石單元8是設置於該背板3的該背面32之下，並包括一具導磁性之磁座81、數個彼此間隔設置於該磁座81上的永久磁鐵82、一由相鄰永久磁鐵82與該磁座81共同定義出的冷卻通道83，及數個夾置於該背板3之背面32與該等永久磁鐵82間以封閉該冷卻通道83的密封件84；其中，相鄰的永久磁鐵82彼此極性相反。The back plate 3 includes a setting surface 31 and a back surface 32 facing away from the setting surface 31. Specifically, the magnet unit 8 is disposed under the back surface 32 of the back plate 3 and includes a magnetic base 81 having magnetic permeability, a plurality of permanent magnets 82 disposed on the magnetic base 81 at intervals, A cooling channel 83 defined by adjacent permanent magnets 82 and the magnetic base 81, and a plurality of seals 84 sandwiched between the back surface 32 of the back plate 3 and the permanent magnets 82 to close the cooling channel 83. ; Wherein, adjacent permanent magnets 82 have opposite polarities to each other.
該鐵磁性靶材單元F設置於該設置面31上，並包括一內側靶材4、該間隔地圍繞該內側靶材4的內環靶材5，及一間隔地圍繞該內環靶材5的外環靶材6。The ferromagnetic target unit F is disposed on the setting surface 31 and includes an inner target 4, an inner ring target 5 that surrounds the inner target 4 at intervals, and an inner ring target 5 that surrounds the interval. The outer ring target 6.
該內側靶材4沿一長度方向X延伸，並具有一位於該設置面31的基部41，及一自該基部41之遠離該設置面31的一端緣朝外凸伸，以覆蓋該內環靶材5之一內緣51的延伸部42。The inner target 4 extends along a length direction X and has a base portion 41 located on the setting surface 31 and an end edge of the base portion 41 far from the setting surface 31 protruding outward to cover the inner ring target. One of the extensions 42 of the inner edge 51 of the material 5.
該內環靶材5具有一位於該設置面31的背面52、該背向該背面52的轟擊面53、一自該背面52背向該設置面31凸伸的基部56、一自該基部56背向該內環靶材5的背面52凸伸的轟擊部57，及兩個貫穿該背面52與該轟擊面53的環形狹縫54，且該等環形狹縫54未能使該設置面31自該轟擊面53顯露；其中，該轟擊部57還朝該內側靶材4與該外環靶材6反向凸伸並連接該轟擊面53。該內環靶材5之背面52沿一實質垂直於該長度方向X之寬度方向Y具有一第一寬度W1 ，該內環靶材5之轟擊面53沿該寬度方向Y具有一第二寬度W2 ，且W2 ＞ W1 。該內環靶材5之基部56沿該內環靶材5之一厚度方向Z具有一第一厚度H1 ，該內環靶材之轟擊部57沿該厚度方向Z具有一第二厚度H2 ，且H2 ＞H1 。此外，各環形狹縫54沿該寬度方向Y具有一狹縫寬度Ws；較佳地，Ws是介於1 mm至2 mm間。The inner ring target 5 has a back surface 52 located on the setting surface 31, a bombarding surface 53 facing away from the back surface 52, a base portion 56 protruding from the back surface 52 away from the setting surface 31, and a base portion 56 The bombardment 57 protruding away from the back surface 52 of the inner ring target 5 and two annular slits 54 penetrating the back surface 52 and the bombardment surface 53, and the annular slits 54 fail to make the setting surface 31 It is revealed from the bombardment surface 53; wherein, the bombardment portion 57 also projects toward the inner target 4 and the outer ring target 6 in the opposite direction and connects the bombardment surface 53. The back surface 52 of the inner ring target 5 has a first width W 1 along a width direction Y substantially perpendicular to the length direction X, and the bombardment surface 53 of the inner ring target 5 has a second width along the width direction Y. W 2 , and W 2 > W 1 . The base portion 56 of the inner ring target 5 has a first thickness H 1 along a thickness direction Z of the inner ring target 5, and the bombardment portion 57 of the inner ring target has a second thickness H 2 along the thickness direction Z. And H 2 > H 1 . In addition, each of the annular slits 54 has a slit width Ws along the width direction Y; preferably, Ws is between 1 mm and 2 mm.
該外環靶材6具有一位於該設置面31的基部61，及一自該基部61之遠離該設置面31的一端緣朝內凸伸，以覆蓋該內環靶材5之一外緣55的延伸部62。The outer ring target 6 has a base portion 61 located on the setting surface 31 and an end edge of the base portion 61 that is far from the setting surface 31 protrudes inwardly to cover an outer edge 55 of the inner ring target material 5. Of extension 62.
該導磁片7圍繞該外環靶材6，並位於該背板3的設置面31上。The magnetic conductive sheet 7 surrounds the outer ring target 6 and is located on the installation surface 31 of the back plate 3.
此處需補充說明的是，基於在實際實施磁控濺鍍製程時，該內環靶材5是該磁性靶材陰極裝置中的主要濺鍍靶材(也就是說，多數帶電氣體離子根據該勞倫茲力以產生迴旋軌跡時是轟擊該內環靶材5)；因此，在本發明中，W2 ＞ W1 以及H2 ＞H1 之目的是在於，增加該內環靶材5之轟擊面53的轟擊面積，同時增加該內環靶材5之轟擊部57所能被帶電氣體離子轟擊的體積，以間接地增加靶材的利用率。本發明該第一實施例是適合於較高真空度的鍍膜環境下實施磁控濺鍍製程。此外，當W2 /W1 ＜1，且H2 /H1 ＜1時，該內環靶材5之轟擊面53與轟擊部57將無法提供足夠量的轟擊面積與體積供帶電氣體離子轟擊，以致於該內環靶材5因靶材利用率低而需經常性地更換靶材。相反地，當W2 /W1 ＞3，且H2 /H1 ＞10時，不利於封閉磁力線經由彼此相鄰且間隔設置之內側靶材4、內環靶材5與外環靶材6間的間隙處均勻穿出該轟擊面53；此外，從該內環靶材5的製作成本考量，亦將增加製作上的成本。因此，較佳地，1＜W2 /W1 ≤3，且1＜ H2 /H1 ≤10；更佳地，W2 是介於20 mm至60 mm間；該內環靶材5沿該厚度方向Z具有一總厚度，且該總厚度是介於4 mm至25 mm間。It should be added here that based on the actual implementation of the magnetron sputtering process, the inner ring target 5 is the main sputtering target in the magnetic target cathode device (that is, most charged gas ions are based on this The Lorentz force bombards the inner ring target 5) when generating the trajectory; therefore, in the present invention, the purpose of W 2 > W 1 and H 2 > H 1 is to increase the inner ring target 5. The bombardment area of the bombardment surface 53 increases the volume of the bombardment portion 57 of the inner ring target 5 that can be bombarded with charged gas ions, thereby indirectly increasing the utilization rate of the target. The first embodiment of the present invention is suitable for performing a magnetron sputtering process in a coating environment with a high degree of vacuum. In addition, when W 2 / W 1 <1 and H 2 / H 1 <1, the bombardment surface 53 and the bombardment portion 57 of the inner ring target 5 cannot provide a sufficient amount of bombardment area and volume for charged gas ion bombardment. Therefore, the target material 5 of the inner ring needs to be replaced frequently due to the low utilization rate of the target material. Conversely, when W 2 / W 1 > 3 and H 2 / H 1 > 10, it is not favorable for the closed magnetic field lines to pass through the inner target 4, the inner ring target 5 and the outer ring target 6 which are adjacent to each other and spaced apart. The bombardment surface 53 is evenly penetrated at the gap between the two. In addition, considering the manufacturing cost of the inner ring target 5, the manufacturing cost will also increase. Therefore, preferably, 1 <W 2 / W 1 ≤3, and 1 <H 2 / H 1 ≤10; more preferably, W 2 is between 20 mm and 60 mm; The thickness direction Z has a total thickness, and the total thickness is between 4 mm and 25 mm.
在本發明該第一實施例中，各環形狹縫54是由兩平行間隔之傾斜面541所共同定義而成，且各傾斜面541與該設置面31是夾一介於30°至75°間的第一預定角θ1 。In the first embodiment of the present invention, each of the annular slits 54 is defined by two parallel-spaced inclined surfaces 541, and each of the inclined surfaces 541 and the setting surface 31 is between 30 ° and 75 °. The first predetermined angle θ 1 .
該內側靶材4與該外環靶材6的延伸部42、62各包括一面向該內環靶材5之轟擊面53的第一面421、621、一背向該第一面421、621的第二面422、622，及一連接該第一面421、621與該第二面422、622的第三面423、623。此處需補充說明的是，為了避免電漿集中於該內側靶材4及該外環靶材6之延伸部42、62與該內環靶材5之該轟擊面53間，較佳地，該內側靶材4與該外環靶材6之第一面421、621至該內環靶材5之轟擊面53的一距離是介於2 mm至3 mm間。較佳地，該內側靶材4與該外環靶材6之延伸部42、62的第三面423、623是與其第一面421、621夾一小於等於90°的第二預定夾角θ2 。更佳地，該內側靶材4與該外環靶材6之延伸部42、62的第二預定夾角θ2 是介於45°至90°間。藉此，經由該內側靶材4與外環靶材6之延伸部42、62，將磁力線引導至該內環靶材5的內緣51與外緣55，並搭配穿越過該等環形狹縫54之磁力線，可於鄰近該轟擊面53處增加橫跨該轟擊面53的水平磁場，從而使該內環靶材5於鄰近該轟擊面53之內緣51、外緣55與內緣51及外緣55間之磁場分佈的均勻性提升，進而提升磁性靶材利用率，並增加磁控濺鍍系統於實施磁控濺鍍時的鍍膜速率。The inner target 4 and the extensions 42 and 62 of the outer target 6 each include a first surface 421 and 621 facing the bombardment surface 53 of the inner target 5 and a back facing the first surfaces 421 and 621. Second surfaces 422, 622, and a third surface 423, 623 connecting the first surfaces 421, 621 and the second surfaces 422, 622. What needs to be added here is that, in order to avoid plasma concentration between the inner target 4 and the extensions 42 and 62 of the outer ring target 6 and the bombardment surface 53 of the inner ring target 5, preferably, A distance between the inner target 4 and the first surfaces 421 and 621 of the outer ring target 6 to the bombardment surface 53 of the inner ring target 5 is between 2 mm and 3 mm. Preferably, the third faces 423 and 623 of the inner target 4 and the extensions 42 and 62 of the outer ring target 6 are at a second predetermined angle θ 2 less than 90 ° with the first faces 421 and 621 thereof. . More preferably, the second predetermined angle θ 2 between the inner target 4 and the extension portions 42 and 62 of the outer ring target 6 is between 45 ° and 90 °. Thereby, the magnetic lines of force are guided to the inner edge 51 and the outer edge 55 of the inner ring target 5 through the extension portions 42 and 62 of the inner target material 4 and the outer ring target material 6, and pass through the annular slits in a matching manner. The magnetic field lines of 54 can increase the horizontal magnetic field across the bombardment surface 53 adjacent to the bombardment surface 53 so that the inner ring target 5 is adjacent to the inner edge 51, outer edge 55 and inner edge 51 of the bombardment surface 53 and The uniformity of the magnetic field distribution between the outer edges 55 is improved, thereby improving the utilization rate of the magnetic target, and increasing the coating rate of the magnetron sputtering system when implementing the magnetron sputtering.
參閱圖9，本發明具高靶材利用率之磁性靶材陰極裝置之一第二實施例大致上是相同於該第一實施例，其不同處是在於，各環形狹縫54是由兩平行間隔之階梯面542所共同定義而成。Referring to FIG. 9, a second embodiment of a magnetic target cathode device with high target utilization rate according to the present invention is substantially the same as the first embodiment, except that each of the annular slits 54 is formed by two parallel The spaced step surfaces 542 are collectively defined.
參閱圖10，用來與本發明具高靶材利用率之磁性靶材陰極裝置相比較之一比較例，其與該等實施例不同處是在於，該比較例未包含該導磁片7，該內側靶材4與該外環靶材6皆未具有該延伸部42、62，該內環靶材5中未形成有該等環形狹縫54，且該比較例之該內環靶材5的背面52的第一寬度W1 是大於該轟擊面53的第二寬度W2 (也就是，W1 ＞W2 )。Referring to FIG. 10, a comparative example for comparison with a magnetic target cathode device with high target utilization rate according to the present invention is different from these embodiments in that the comparative example does not include the magnetically conductive sheet 7. Neither the inner target 4 nor the outer ring target 6 has the extensions 42, 62, the inner ring target 5 is not formed with the annular slits 54, and the inner ring target 5 of the comparative example is not formed. The first width W 1 of the rear surface 52 is larger than the second width W 2 of the bombardment surface 53 (that is, W 1 > W 2 ).
參閱圖11同時參閱附件1，由該比較例經數值模擬所取得之磁場分布圖顯示可知，該比較例之內環靶材5之水平磁場僅集中於轟擊面53之內緣51及其外緣55處，而該轟擊面53之介於該內緣51與該外緣55之間的水平磁場已低於100 G。此外，參閱圖12，由該比較例之磁通密度(G)與內環靶材剖面之對照圖顯示其水平分量的磁場強度已低於100 G，且橫跨該轟擊面53的磁場均勻度低，難以提升該內環靶材5之利用率。Referring to FIG. 11 and referring to Annex 1, the magnetic field distribution diagram obtained by numerical simulation of the comparative example shows that the horizontal magnetic field of the inner ring target 5 of the comparative example is concentrated only on the inner edge 51 and the outer edge of the bombardment surface 53. 55, and the horizontal magnetic field between the inner edge 51 and the outer edge 55 of the bombardment surface 53 is lower than 100 G. In addition, referring to FIG. 12, the comparison diagram of the magnetic flux density (G) of the comparative example and the cross section of the inner ring target material shows that the magnetic field strength of its horizontal component is lower than 100 G, and the uniformity of the magnetic field across the bombardment surface 53 Low, it is difficult to improve the utilization rate of the inner ring target 5.
反觀本發明該第一實施例，參閱圖13同時參閱附件2，由該第一實施例經數值模擬所取得之磁場分布圖顯示可知，該第一實施例之內環靶材5之轟擊面53於其內緣51及其外緣55處，甚或是內緣51與外緣55間皆顯示有約300 G~350 G的水平磁場強度。此外，參閱圖14，由該第一實施例之磁通密度(G)與內環靶材剖面之對照圖顯示可知，更進一步地證實該第一實施例之內環靶材5於該內緣51與該外緣55間的水平分量的磁場強度已高於305 G，且與內緣51及外緣55之水平磁場差異較小，可有效地提升帶電氣體離子均勻轟擊該內環靶材5之轟擊面53的機率，進而提升內環靶材5之靶材利用率。In contrast to the first embodiment of the present invention, referring to FIG. 13 and referring to Annex 2, the magnetic field distribution chart obtained by numerical simulation of the first embodiment shows that the bombardment surface 53 of the inner ring target 5 of the first embodiment A horizontal magnetic field strength of about 300 G to 350 G is displayed at its inner edge 51 and its outer edge 55, or even between the inner edge 51 and the outer edge 55. In addition, referring to FIG. 14, the comparison between the magnetic flux density (G) of the first embodiment and the cross section of the inner ring target shows that the inner ring target 5 of the first embodiment is further confirmed at the inner edge. The magnetic field strength of the horizontal component between 51 and the outer edge 55 is already higher than 305 G, and the difference between the horizontal magnetic field of the inner edge 51 and the outer edge 55 is small, which can effectively enhance the uniform bombardment of the inner ring target 5 by the charged gas ions 5 The probability of the bombardment surface 53 further increases the target utilization rate of the inner ring target 5.
此外，參閱圖15同時參閱附件3，由該本發明第二實施例經數值模擬所取得之磁場分布圖顯示可知，該第二實施例之內環靶材5之轟擊面53於其內緣51及其外緣55處，甚或是內緣51與外緣55間皆顯示有約300 G~350 G的磁場強度。此外，參閱圖16，由該第二實施例之磁通密度(G)與內環靶材剖面之對照圖顯示可知，也進一步地證實該第二實施例之內環靶材5於該內緣51與該外緣55間的水平分量的磁場強度已高於300 G，能有效地提升帶電氣體離子均勻轟擊該內環靶材5之轟擊面53的機率，進而提升內環靶材5之利用率，並增加磁控濺鍍系統於實施磁控濺鍍時的鍍膜速率。In addition, referring to FIG. 15 and referring to Annex 3, the magnetic field distribution diagram obtained by numerical simulation of the second embodiment of the present invention shows that the bombardment surface 53 of the inner ring target 5 of the second embodiment is at its inner edge 51 At its outer edge 55, or even between the inner edge 51 and the outer edge 55, a magnetic field strength of about 300 G to 350 G is displayed. In addition, referring to FIG. 16, the comparison chart of the magnetic flux density (G) of the second embodiment and the cross section of the inner ring target material shows that the inner ring target material 5 of the second embodiment is further confirmed at the inner edge. The magnetic field strength of the horizontal component between 51 and the outer edge 55 is higher than 300 G, which can effectively increase the probability that the charged gas ions will uniformly bombard the bombardment surface 53 of the inner ring target 5 and further improve the utilization of the inner ring target 5. And increase the deposition rate of the magnetron sputtering system when implementing magnetron sputtering.
綜上所述，本發明之具高靶材利用率之磁性靶材陰極裝置除了令該內環靶材5之轟擊面53的第二寬度W2 大於其背面52的第一寬度W1 ，且令其轟擊部57的第二厚度H2 大於其基部56的第一厚度H1 ，以藉此增加該轟擊面53的面積及該轟擊部57的體積並從而間接提升該內環靶材5的利用率，且利於在較高真空度的製程條件下實施磁控濺鍍外，更因該內環靶材5之該等環形狹縫54與該內側靶材4及外環靶材6之延伸部42、62的設計，而增加該內環靶材5之鄰近該轟擊面53處之內緣51、外緣55及其兩者間之磁場分佈的均勻性，以大幅地提升靶材利用率及鍍膜速率。因此，確實可達到本發明之目的。In summary, the magnetic target cathode device with high target utilization rate of the present invention can make the second width W 2 of the bombardment surface 53 of the inner ring target 5 larger than the first width W 1 of the back surface 52 thereof, and Make the second thickness H 2 of the bombardment portion 57 larger than the first thickness H 1 of the base portion 56 to increase the area of the bombardment surface 53 and the volume of the bombardment portion 57 and thereby indirectly enhance the inner ring target 5. Utilization, and is conducive to the implementation of magnetron sputtering under high vacuum process conditions, but also because of the annular slits 54 of the inner ring target 5 and the extension of the inner target 4 and outer ring target 6 The design of the parts 42 and 62 increases the uniformity of the magnetic field distribution between the inner edge 51 and the outer edge 55 of the inner ring target 5 adjacent to the bombardment surface 53 and greatly improves the target utilization rate. And coating rate. Therefore, the object of the present invention can be achieved.
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍，凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。However, the above are only the preferred embodiments of the present invention. When the scope of implementation of the present invention cannot be limited by this, all simple equivalent changes and modifications made in accordance with the scope of the patent application and the content of the patent specification of the present invention are Still within the scope of the invention patent.
3‧‧‧背板
62‧‧‧延伸部
31‧‧‧設置面
621‧‧‧第一面
31‧‧‧背面
622‧‧‧第二面
F‧‧‧鐵磁性靶材單元
623‧‧‧第三面
4‧‧‧內側靶材
7‧‧‧導磁片
41‧‧‧基部
8‧‧‧磁石單元
42‧‧‧延伸部
81‧‧‧磁座
421‧‧‧第一面
82‧‧‧永久磁鐵
422‧‧‧第二面
83‧‧‧冷卻通道
423‧‧‧第三面
84‧‧‧密封件
5‧‧‧內環靶材
9‧‧‧陽極裝置
51‧‧‧內緣
H1‧‧‧第一厚度
52‧‧‧背面
H2‧‧‧第二厚度
53‧‧‧轟擊面
X‧‧‧長度方向
54‧‧‧環形狹縫
Y‧‧‧寬度方向
541‧‧‧傾斜面
W1‧‧‧第一寬度
542‧‧‧階梯面
W2‧‧‧第二寬度
55‧‧‧外緣
Ws‧‧‧狹縫寬度
56‧‧‧基部
Z‧‧‧厚度方向
57‧‧‧轟擊部
θ1‧‧‧第一預定夾角
6‧‧‧外環靶材
θ2‧‧‧第二預定夾角
61‧‧‧基部3‧‧‧ back plate
62‧‧‧ extension
31‧‧‧ Setting surface
621‧‧‧ the first side
31‧‧‧ back
622‧‧‧Second Side
F‧‧‧ Ferromagnetic Target Unit
623‧‧‧ Third Side
4‧‧‧ inside target
7‧‧‧ magnetically permeable sheet
41‧‧‧ base
8‧‧‧Magnetic unit
42‧‧‧ extension
81‧‧‧ Magnetic Block
421‧‧‧First
82‧‧‧ permanent magnet
422‧‧‧Second Side
83‧‧‧ cooling channel
423‧‧‧ Third Side
84‧‧‧seals
5‧‧‧ Inner ring target
9‧‧‧Anode device
51‧‧‧Inner edge
H 1 ‧‧‧ first thickness
52‧‧‧ back
H 2 ‧‧‧ second thickness
53‧‧‧ Bombardment surface
X‧‧‧length direction
54‧‧‧ Circular slit
Y‧‧‧Width direction
541‧‧‧inclined surface
W 1 ‧‧‧ first width
542‧‧‧step surface
W 2 ‧‧‧ second width
55‧‧‧ outer edge
Ws‧‧‧Slit width
56‧‧‧ base
Z‧‧‧ thickness direction
57‧‧‧Bombardment θ 1 ‧‧‧First predetermined angle
6‧‧‧ Outer ring target θ 2 ‧‧‧ Second predetermined angle
61‧‧‧base
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中： 圖1是一俯視示意圖，說明美國第2011/0186421 A1早期公開號專利案所公開的一種磁性濺鍍靶材陰極裝置； 圖2是由圖1之直線II-II所取得的一局部側視剖面圖，說明該磁性濺鍍靶材陰極裝置之細部結構； 圖3是一局部側視剖面圖，說明美國第4,572,776號核准公告號專利案所公開的一種鐵磁性靶材陰極裝置； 圖4是一磁場與鐵磁性靶材單元剖面之對照圖，說明該鐵磁性靶材陰極裝置之一內環靶材之水平分量的磁場分布； 圖5是一示意圖，說明該鐵磁性靶材陰極裝置之內環靶材的磁力線分布； 圖6是一立體圖，說明本發明具高靶材利用率之磁性靶材陰極裝置之一第一實施例； 圖7是沿圖6之直線VII-VII所取得的一局部側視剖面圖，說明本發明該第一實施例之細部結構； 圖8是圖7的一局部放大圖，說明本發明該第一實施例之一內側靶材、一內環靶材及一外環靶材的具體結構； 圖9一局部側視剖面圖，說明本發明具高靶材利用率之磁性靶材陰極裝置之一第二實施例； 圖10是一立體圖，說明用來與本發明該等實施例比較用之磁性靶材陰極裝置的一比較例； 圖11是一磁場分布圖，說明本發明該比較例之磁場強度與磁力線分布； 圖12是一磁通密度(magnetic flux density；G)與內環靶材剖面之對照圖，說明本發明該比較例之一內環靶材之一轟擊面的水平分量及垂直分量之磁通密度； 圖13是一磁場分布圖，說明本發明該第一實施例之磁場強度與磁力線分布； 圖14是一磁通密度(G)與內環靶材剖面之對照圖，說明本發明該第一實施例之一內環靶材之一轟擊面的水平分量及垂直分量之磁通密度； 圖15是一磁場分布圖，說明本發明該第二實施例之磁場強度與磁力線分布；及 圖16是一磁通密度(G)與內環靶材剖面之對照圖，說明本發明該第二實施例之一內環靶材之一轟擊面的水平分量及垂直分量之磁通密度。Other features and effects of the present invention will be clearly presented in the embodiment with reference to the drawings, in which: FIG. 1 is a schematic top view illustrating a magnetic sputtering disclosed in US Patent Publication No. 2011/0186421 A1 Early Publication Target cathode device; Figure 2 is a partial side cross-sectional view taken from line II-II of Figure 1, illustrating the detailed structure of the magnetic sputtering target cathode device; Figure 3 is a partial side cross-sectional view, illustrating A ferromagnetic target cathode device disclosed in U.S. Patent No. 4,572,776 approval; FIG. 4 is a cross-sectional view of a magnetic field and a ferromagnetic target unit cross section, illustrating an inner ring target of the ferromagnetic target cathode device Magnetic field distribution of the horizontal component; FIG. 5 is a schematic diagram illustrating the magnetic field line distribution of the inner ring target of the ferromagnetic target cathode device; FIG. 6 is a perspective view illustrating the magnetic target cathode with high target utilization rate of the present invention A first embodiment of a device; FIG. 7 is a partial side sectional view taken along the line VII-VII of FIG. 6 to illustrate the detailed structure of the first embodiment of the present invention; FIG. 8 is a partial enlargement of FIG. 7 The figure illustrates the specific structure of an inner target, an inner target, and an outer target of the first embodiment of the present invention; FIG. 9 is a partial side cross-sectional view illustrating the high target utilization rate of the present invention; A second embodiment of a magnetic target cathode device; FIG. 10 is a perspective view illustrating a comparative example of a magnetic target cathode device for comparison with the embodiments of the present invention; FIG. 11 is a magnetic field distribution chart illustrating the The magnetic field intensity and magnetic field line distribution of the comparative example of the present invention; FIG. 12 is a comparison diagram of a magnetic flux density (G) and an inner ring target section, illustrating one of the inner ring targets of the comparative example of the present invention Magnetic flux density of the horizontal and vertical components of the bombardment surface; Figure 13 is a magnetic field distribution diagram illustrating the magnetic field intensity and magnetic field line distribution of the first embodiment of the present invention; Figure 14 is a magnetic flux density (G) and an inner ring target A cross-sectional view of the material, illustrating the magnetic flux density of the horizontal and vertical components of a bombardment surface of an inner ring target of the first embodiment of the present invention; FIG. 15 is a magnetic field distribution diagram illustrating the second embodiment of the present invention Magnetic field strength and magnetic force 16; and FIG. 16 is a comparison diagram of a magnetic flux density (G) and a cross section of an inner ring target, illustrating the horizontal and vertical component magnetic fluxes of a bombardment surface of an inner ring target according to the second embodiment of the present invention. density.
3‧‧‧背板 3‧‧‧ back plate
31‧‧‧設置面 31‧‧‧ Setting surface
4‧‧‧內側靶材 4‧‧‧ inside target
42‧‧‧延伸部 42‧‧‧ extension
421‧‧‧第一面 421‧‧‧First
422‧‧‧第二面 422‧‧‧Second Side
423‧‧‧第三面 423‧‧‧ Third Side
5‧‧‧內環靶材 5‧‧‧ Inner ring target
622‧‧‧第二面 622‧‧‧Second Side
623‧‧‧第三面 623‧‧‧ Third Side
9‧‧‧陽極裝置 9‧‧‧Anode device
H1‧‧‧第一厚度 H 1 ‧‧‧ first thickness
H2‧‧‧第二厚度 H 2 ‧‧‧ second thickness
Y‧‧‧寬度方向 Y‧‧‧Width direction
W1‧‧‧第一寬度 W 1 ‧‧‧ first width
W2‧‧‧第二寬度 W 2 ‧‧‧ second width
53‧‧‧轟擊面 53‧‧‧ Bombardment surface
541‧‧‧傾斜面 541‧‧‧inclined surface
6‧‧‧外環靶材 6‧‧‧ Outer ring target
62‧‧‧延伸部 62‧‧‧ extension
621‧‧‧第一面 621‧‧‧ the first side
Ws‧‧‧狹縫寬度 Ws‧‧‧Slit width
Z‧‧‧厚度方向 Z‧‧‧ thickness direction
θ1‧‧‧第一預定夾角 θ 1 ‧‧‧ the first predetermined angle
θ2‧‧‧第二預定夾角 θ 2 ‧‧‧ second predetermined angle
Claims (10)
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| ATE47504T1 (en) * | 1983-12-05 | 1989-11-15 | Leybold Ag | MAGNETRON CATODE FOR ATOMY FERROMAGNETIC TARGETS. |
| CN2828061Y (en) * | 2005-07-15 | 2006-10-18 | 中国人民解放军国防科学技术大学 | Target material structure of magnetic sputtering ferromagnetic material |
| TWM371726U (en) * | 2009-09-11 | 2010-01-01 | Po-Jen Cheng | Cathode structure device of vacuum sputtering machine |
| TW201120229A (en) * | 2009-12-04 | 2011-06-16 | Ind Tech Res Inst | Structure for increasing utilization rate of target |
| TW201142061A (en) * | 2010-01-29 | 2011-12-01 | Oc Oerlikon Balzers Ag | A target assembly for a magnetron sputtering apparatus, a magnetron sputtering apparatus and a method of using the magnetron sputtering apparatus |
| CN104487607B (en) * | 2012-07-11 | 2017-02-22 | 佳能安内华股份有限公司 | Sputtering device and magnet unit |
| CN103290378B (en) * | 2013-05-30 | 2015-09-30 | 江西沃格光电股份有限公司 | Magnetron sputtering plating cathode mechanism |
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