TW201800872A - Exposure device, platform calibration system, platform calibration method, and calibration fixture wherein the exposure device uses a reference plate to establish correction information of a movement accuracy of a mobile platform - Google Patents
Exposure device, platform calibration system, platform calibration method, and calibration fixture wherein the exposure device uses a reference plate to establish correction information of a movement accuracy of a mobile platform Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明係關於曝光裝置、平台校正系統以及平台校正方法，更詳細而言，關於用參考板建立校正資訊並修正移動平台之驅動精確度的曝光裝置、平台校正系統、平台校正方法以及校正時所使用的校正治具。 The present invention relates to an exposure device, a platform calibration system, and a platform calibration method. More specifically, the invention relates to an exposure device, a platform calibration system, a platform calibration method, and a calibration method for establishing calibration information using a reference plate and modifying the driving accuracy of a mobile platform. Used correction fixture.
習知上，製造半導體封裝基板的微影(lithography)製程中，主要使用步進重複(step-and-repeat)方式之縮小投影曝光裝置、步進掃描(step-and-scan)方式之投影曝光裝置等。 Conventionally, in a lithography process for manufacturing a semiconductor package substrate, a step-and-repeat reduction projection exposure device and a step-and-scan projection exposure are mainly used. Device, etc.
這些曝光裝置中，已形成於基板上之電路圖樣(pattern)與即將重疊曝光至其上之電路圖樣間的對準，即疊合(superposition)，需要高精確度。 In these exposure devices, the alignment between the circuit pattern that has been formed on the substrate and the circuit pattern that is to be superimposed and exposed thereon, that is, superposition, requires high accuracy.
至今的曝光裝置中，雖使用雷射干涉儀量測持定被曝光基板之基板平台的位置以實現高精確度的疊合，但無法忽略雷射干涉儀之光束光徑上因大氣的溫度波動(空氣波動)所致的量測值的短期變動。 In today's exposure devices, although laser interferometers are used to measure and hold the position of the substrate platform of the exposed substrates to achieve high-precision superposition, it is not possible to ignore the temperature fluctuations of the beam path of the laser interferometer due to atmospheric temperature (Air fluctuations) short-term changes in measured values.
因此，開發用比干涉儀不易受空氣波動影響的編碼器(encoder)進行晶圓平台的位置量測、用被授與已知之位置關係中之複數個標記的參考晶圓定位基板平台並同時檢測複數個標記的每一者、根據所檢測之定位位置與目標位置建立修正基板平 台之驅動精確度的校正資訊的曝光裝置(例如，專利文獻1)。 Therefore, an encoder that is less susceptible to air fluctuations than the interferometer was developed to measure the position of the wafer platform, and a plurality of labeled reference wafers in a known position relationship were used to position the substrate platform and simultaneously detect For each of the plurality of marks, a correction substrate level is established based on the detected positioning position and the target position. An exposure device that drives correction information of a stage (for example, Patent Document 1).
習知的半導體封裝基板係使用晶圓，但近年來已嘗試使用比晶圓大型的矩形基板。更詳細而言，習知上係使用被稱作FAN-IN WLP的在半導體晶片上形成重接線(rewiring)、絕緣膜、桿(post)後切割分離的封裝技術，但近年來係使用被稱作FAN-OUT WLP的將切割分離之晶片再構成至基板上並形成重接線、絕緣膜、桿的封裝技術，在此情況下，用於再構成之基板不只使用晶片，亦嘗試使用更大型的矩形基板。 Conventional semiconductor package substrates use wafers, but in recent years, attempts have been made to use rectangular substrates that are larger than wafers. More specifically, conventionally, a packaging technique called FAN-IN WLP is used to form a rewiring, insulation film, and post-separation package on a semiconductor wafer. However, in recent years, it has been called As a FAN-OUT WLP, the diced and separated wafer is reassembled onto the substrate and formed into a rewiring, insulation film, and rod packaging technology. In this case, not only the wafer is used for the reconstruction of the substrate, but also a larger one is tried. Rectangular substrate.
由於基板大型化，曝光裝置的基板平台係大型化，曝光時的基板平台驅動區域亦變大。因此，用於基本平台校正之參考板(與參考晶圓相同，被授與已知之位置關係中之複數個標記的板)需要大型化。另外，對於標線片平台亦相同，隨著曝光面積之放大或縮小投影光學系統的高倍率化，標線片平台係大型化，因此，用於校正之參考板需要大型化。 As the substrate becomes larger, the substrate stage of the exposure apparatus becomes larger, and the substrate stage driving area during exposure becomes larger. Therefore, the reference plate (the same as the reference wafer, which is given a plurality of marked plates in a known positional relationship) for the basic platform correction needs to be enlarged. In addition, the reticle stage is also the same. As the exposure area is enlarged or reduced, the magnification of the projection optical system is increased, and the reticle stage is enlarged. Therefore, the reference plate used for correction needs to be enlarged.
【先前技術文獻】 [Previous Technical Literature]
【專利文獻】 [Patent Literature]
專利文獻1特開2009-164306號公報 Patent Document 1 JP 2009-164306
在參考板上形成複數個標記時雖使用光蝕刻(photolithography)製程，但大型的板狀部件因熱膨脹等的影響容易產生歪曲。另外，由於光蝕刻裝置也使用大型的平台，描繪於參考板上之標記的位置誤差容易變大。因此，大型的參考板相較於小型的參考板更容易產生參考板的配置誤差。 Although a plurality of marks are formed on a reference plate, although a photolithography process is used, large plate-shaped members are easily distorted due to the effects of thermal expansion and the like. In addition, since the photoetching apparatus also uses a large stage, the position error of the mark drawn on the reference plate is likely to become large. Therefore, a large reference board is more likely to generate a reference board configuration error than a small reference board.
因此，用比校正對象之移動平台(平台)驅動區域小的參考板，希望修正移動平台之驅動區域整體的驅動精確度。 Therefore, it is desirable to modify the driving accuracy of the entire driving area of the mobile platform using a reference plate that is smaller than the driving area of the mobile platform (platform) to be corrected.
本發明之曝光裝置為包括用參考板建立移動平台之移動精確度的校正資訊的校正部的曝光裝置，包括用載置於移動平台之第1量測區域的參考板建立第1校正資訊，並用載置於與第1量測區域有重複區域之至少1個第2量測區域的上述參考板建立第2校正資訊的上述校正部。最好有將移動平台之載置面(載置參考板、基板、標線片等的面)分割為複數(例如為四分)而得的複數個第2量測區域。另外，本發明之曝光裝置，包括根據移動平台之移動檢測載置於移動平台之參考板之複數個標記的位置的檢測部，校正部從檢測之標記位置與此時的移動平台位置之間的關係，建立修正移動平台之移動精確度的修正地圖。再者，校正部根據第1校正資訊與第2校正資訊，建立對應至移動平台之第1量測區域與第2量測區域結合之區域的校正資訊。 The exposure device of the present invention is an exposure device including a correction section that establishes correction information for the movement accuracy of a mobile platform using a reference plate. The exposure device includes establishing the first correction information using a reference plate placed on the first measurement area of the mobile platform, and using the The reference plate placed on at least one second measurement area having a repeating area with the first measurement area establishes the correction section of the second correction information. It is preferable to have a plurality of second measurement areas obtained by dividing a mounting surface (a surface on which a reference plate, a substrate, and a reticle are placed) of the mobile platform into a plurality (for example, four points). In addition, the exposure device of the present invention includes a detection unit that detects the positions of the plurality of marks placed on the reference plate of the mobile platform based on the movement of the mobile platform, and the correction unit adjusts the distance between the detected mark position and the position of the mobile platform at this time. Relationship to establish a correction map that corrects the movement accuracy of the mobile platform. Furthermore, the correction unit creates correction information corresponding to an area where the first measurement area and the second measurement area are combined with each other based on the first correction information and the second correction information.
藉由此種曝光裝置，即使在參考板相對於移動平台載置板狀體之面(即移動平台的驅動範圍)為小的情況下，仍可校正移動平台的移動精確度。 With such an exposure device, the accuracy of the movement of the mobile platform can be corrected even when the reference plate is small relative to the surface on which the plate-shaped body is mounted on the mobile platform (ie, the driving range of the mobile platform).
另外，本發明之曝光裝置，校正部根據位於載置於上述第2量測區域之參考板的重複區域的標記的位置，修正載置於第2量測區域之參考板的位置誤差以建立第2校正資訊。藉由此種曝光裝置，可修正因載置參考板於不同量測區域所造成的誤差，並以第1量測區域為參考建立對應至其他量測區域的校正資訊。 In addition, in the exposure apparatus of the present invention, the correction unit corrects the position error of the reference plate placed in the second measurement area based on the position of the mark located in the repeating area of the reference plate placed in the second measurement area to establish the first 2 Calibration information. With this type of exposure device, errors caused by placing reference plates in different measurement areas can be corrected, and correction information corresponding to other measurement areas can be established using the first measurement area as a reference.
本發明之平台校正系統為用參考板校正移動平台 的平台校正系統，包括用載置於移動平台之第1量測區域的參考板建立第1校正資訊、用載置於與第1量測區域有重複區域之至少1個第2量測區域的參考板建立第2校正資訊的校正部。藉由此種平台校正系統，即使在參考板相對於移動平台為小的情況下，仍可校正移動平台的移動精確度。 The platform calibration system of the present invention is to calibrate a mobile platform with a reference plate. The platform calibration system includes establishing a first calibration information by using a reference board placed in a first measurement area of a mobile platform, and using a The reference board establishes a calibration section for the second calibration information. With such a platform correction system, the movement accuracy of the mobile platform can be corrected even when the reference plate is small relative to the mobile platform.
另外，本發明之平台校正方法，包括：將參考板載置於移動平台之第1量測區域的步驟；檢測單元根據移動平台的移動檢測上述參考板之複數個標記的位置的步驟；校正單元從複數個標記的位置建立對應至第1量測區域的第1校正資訊的步驟；將參考板載置於與第1量測區域有重複區域之至少1個第2量測區域的步驟；檢測單元根據移動平台的移動檢測複數個標記的位置的步驟；校正單元從複數個標記的位置建立對應至第2量測區域的第2校正資訊的步驟；以及校正單元根據第1校正資訊與第2校正資訊建立修正移動平台之移動精確度的校正資訊的步驟。 In addition, the platform calibration method of the present invention includes: a step of placing the reference board on the first measurement area of the mobile platform; a step of detecting the position of the plurality of marks of the reference board according to the movement of the mobile platform; a correction unit A step of establishing first correction information corresponding to the first measurement area from the positions of a plurality of marks; a step of placing a reference board on at least one second measurement area having a repeating area with the first measurement area; detecting A step in which the unit detects the positions of the plurality of marks according to the movement of the mobile platform; a step in which the correction unit establishes second correction information corresponding to the second measurement area from the positions of the plurality of marks; and the correction unit according to the first correction information and the second Calibration Information Steps to create calibration information that corrects the movement accuracy of the mobile platform.
藉由此種校正方法，可建立對應至比參考板大小更廣之區域的校正資訊。 With this calibration method, calibration information corresponding to a wider area than the reference plate can be created.
另外，將參考板載置於第2量測區域的步驟中，若將複數個參考板載置於上述載置部，可更提高作業效率。 In addition, in the step of placing the reference plate on the second measurement area, if a plurality of reference plates are placed on the mounting portion, the work efficiency can be further improved.
另外，本發明之校正方法，更包括：檢測單元檢測位於複數個第2量測區域之重複區域的標記的位置的步驟；以及校正部根據重複區域之複數個標記的位置求得載置於第2量測區域之各參考板的標記位置誤差的步驟。藉此，可修正各參考板的標記位置誤差(包含參考板的設置誤差)，並以第1量測區域為參考建立對應至其他量測區域的校正資訊。 In addition, the correction method of the present invention further includes a step of detecting the position of the marker located in the repeated area of the plurality of second measurement areas; and the correction unit obtains the position of the marker on the first area based on the positions of the plurality of marks in the repeated area. 2 Steps of measuring the mark position error of each reference plate in the area. Thereby, it is possible to correct the mark position error of each reference plate (including the setting error of the reference plate), and use the first measurement area as a reference to establish correction information corresponding to other measurement areas.
另外，代替將複數個參考板載置於第2量測區域，亦可使用包括板狀基材與複數個參考板、在將基材載置於移動平台時以分別置於對應至複數個量測區域(第2量測區域)之位置的方式將上述複數個參考板固定至基材的校正治具。藉由使用此種校正治具，可更提高作業性。 In addition, instead of placing a plurality of reference plates on the second measurement area, a plate-shaped base material and a plurality of reference plates may be used. The method of measuring the position of the measurement area (second measurement area) fixes the plurality of reference plates to the calibration jig of the base material. By using such a correction jig, workability can be further improved.
根據本發明，用比移動平台之驅動區域小的參考板，更精確地建立用於修正移動平台驅動精確度的校正資訊，而可修正移動平台的驅動精確度。 According to the present invention, the reference information smaller than the driving area of the mobile platform is used to more accurately establish the correction information for correcting the driving accuracy of the mobile platform, and the driving accuracy of the mobile platform can be corrected.
10‧‧‧投影曝光裝置 10‧‧‧ Projection exposure device
20‧‧‧光源 20‧‧‧ light source
21‧‧‧燈驅動部 21‧‧‧lamp driver
22、26‧‧‧鏡 22, 26‧‧‧ mirror
24‧‧‧積分器 24‧‧‧ Integrator
28‧‧‧準直透鏡 28‧‧‧ Collimating lens
30‧‧‧標線片平台 30‧‧‧Reticle Platform
32、42‧‧‧平台驅動部 32, 42‧‧‧ Platform Driver
34‧‧‧投影光學系統 34‧‧‧ projection optical system
36、37‧‧‧攝影部 36, 37‧‧‧Photography Department
38‧‧‧影像處理部 38‧‧‧Image Processing Department
40‧‧‧基板平台 40‧‧‧ substrate platform
43‧‧‧量測部 43‧‧‧Measurement Department
50‧‧‧控制部 50‧‧‧Control Department
51‧‧‧記憶部 51‧‧‧Memory Department
52‧‧‧校正部 52‧‧‧Correction Department
AS‧‧‧整體區域 AS‧‧‧Overall area
AS1~AS5‧‧‧量測區域 AS1 ~ AS5‧‧‧‧Measurement area
M11、M1n、Mm1、Mmn、Mij、M2ij‧‧‧參考標記 M11, M1n, Mm1, Mmn, Mij, M2ij ‧‧‧ reference mark
PB‧‧‧基材 PB‧‧‧ substrate
PSP1~PSP4‧‧‧參考板部件 PSP1 ~ PSP4‧‧‧Reference board parts
Px、Py‧‧‧間距 Px, Py‧‧‧pitch
R‧‧‧標線片 R‧‧‧ reticle
SP、SP、2SPa~SPd‧‧‧參考板 SP, SP, 2SPa ~ SPd‧‧‧Reference board
W‧‧‧基板 W‧‧‧ substrate
第1圖係本發明之曝光裝置的概略區塊圖。 FIG. 1 is a schematic block diagram of an exposure apparatus according to the present invention.
第2圖係表示第1實施型態的參考板SP、排列於參考板SP之參考標記Mij的圖。 Fig. 2 is a diagram showing a reference plate SP and reference marks Mij arranged on the reference plate SP in the first embodiment.
第3圖係表示第1實施型態的基板平台40、量測區域AS1~AS5的圖。 FIG. 3 is a diagram showing the substrate stage 40 and the measurement areas AS1 to AS5 in the first embodiment.
第4圖係表示第1實施型態中參考板SP載置於基板平台40之量測區域AS1之狀態的圖。 FIG. 4 is a diagram showing a state where the reference plate SP is placed on the measurement area AS1 of the substrate stage 40 in the first embodiment.
第5圖係表示第1實施型態中量測區域AS1之修正地圖CM1之一部分資料的表格。 Fig. 5 is a table showing a part of data of the correction map CM1 of the measurement area AS1 in the first embodiment.
第6圖係表示第1實施型態中參考板SP載置於基板平台40之量測區域AS2之狀態的圖。 FIG. 6 is a diagram showing a state where the reference plate SP is placed on the measurement area AS2 of the substrate stage 40 in the first embodiment.
第7圖係表示第1實施型態的基板平台40之驅動精確度校正方法的流程圖。 FIG. 7 is a flowchart showing a method for correcting driving accuracy of the substrate stage 40 according to the first embodiment.
第8圖係表示第2實施型態中在基板平台40配置參考板Spa~SPd之狀態的圖。 FIG. 8 is a diagram showing a state in which the reference plates Spa to SPd are arranged on the substrate stage 40 in the second embodiment.
第9圖係表示第2實施型態的基板平台40之驅動精確度校正方法的流程圖。 FIG. 9 is a flowchart showing a method for correcting driving accuracy of the substrate stage 40 according to the second embodiment.
第10圖係表示第3實施型態的第2參考板SP2的圖。 Fig. 10 is a diagram showing a second reference plate SP2 of the third embodiment.
第11圖係表示第3實施型態的基板平台40之驅動精確度校正方法的流程圖。 FIG. 11 is a flowchart showing a method for correcting driving accuracy of the substrate stage 40 according to the third embodiment.
第12圖係表示將基板平台40整體區域AS分割為多個量測區域之例的圖。 FIG. 12 is a diagram showing an example in which the entire area AS of the substrate stage 40 is divided into a plurality of measurement areas.
以下，參照圖式說明本發明的實施型態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
<曝光裝置10的綜述> <Overview of Exposure Device 10>
第1圖係本實施型態之曝光裝置10的區塊圖。 FIG. 1 is a block diagram of an exposure apparatus 10 according to this embodiment.
曝光裝置10為將形成於作為光罩之標線片(reticle)R的遮罩圖樣依據步進重複方式轉寫至基板(工作基板)W的投影曝光裝置，包括放電燈等之光源20、投影光學系統34。標線片R由石英材料構成，形成具有遮光區域的遮罩圖樣。基板W在此適用矽、陶瓷、玻璃或樹脂製的基板等。 The exposure device 10 is a projection exposure device that transfers a mask pattern formed on a reticle R as a photomask to a substrate (working substrate) W in a step-and-repeat manner, and includes a light source 20 such as a discharge lamp, a projection Optical system 34. The reticle R is made of a quartz material and forms a mask pattern having a light-shielding region. The substrate W is suitable for a substrate made of silicon, ceramic, glass, or resin.
自光源20放射的照明光，透過鏡22入射至積分器24，使照明光量變得均一。變得均一的照明光，透過鏡26入射至準直透鏡(collimator lens)28。藉此，平行光係入射至標線片R。光源20經由燈驅動部21驅動控制。 The illumination light emitted from the light source 20 passes through the mirror 22 and enters the integrator 24 so that the amount of the illumination light becomes uniform. The uniform illumination light passes through a mirror 26 and enters a collimator lens 28. Thereby, the parallel light is incident on the reticle R. The light source 20 is driven and controlled via the lamp driving section 21.
搭載標線片R的標線片平台30、搭載基板W的基板平台40上，定義互相垂直的X-Y-Z之3軸座標系。標線片 平台30可在X-Y方向上移動以沿著焦點面移動標線片R，並由驅動部32驅動。另外，標線片平台30亦可在X-Y座標平面中旋轉。標線片平台30之位置座標在此係藉由雷射干涉儀(圖中未示)或線性編碼器(圖中未示)量測。 The reticle stage 30 on which the reticle R is mounted and the substrate stage 40 on which the substrate W is mounted define a three-axis coordinate system of X-Y-Z perpendicular to each other. Reticle The stage 30 is movable in the X-Y direction to move the reticle R along the focal plane, and is driven by the driving section 32. In addition, the reticle platform 30 can also rotate in the X-Y coordinate plane. The position coordinates of the reticle stage 30 are measured here by a laser interferometer (not shown) or a linear encoder (not shown).
透過標線片R之光，經由投影光學系統34作為圖樣光投影至基板W。基板W以其曝光面與投影光學系統34之像側焦點位置一致的方式搭載於基板平台40。 The light that has passed through the reticle R is projected onto the substrate W as pattern light through the projection optical system 34. The substrate W is mounted on the substrate stage 40 so that its exposure surface matches the focal position on the image side of the projection optical system 34.
基板平台40(移動平台)可在X-Y方向上移動以沿著焦點面移動基板W，並由平台驅動部42(驅動部)驅動。另外，基板平台40可向垂直於焦點面(X-Y方向)之Z軸方向移動，並且，亦可在X-Y座標平面中旋轉。基板平台40之位置座標係藉由雷射干涉儀或線性編碼器組成的量測部43量測。 The substrate stage 40 (moving stage) is movable in the X-Y direction to move the substrate W along the focal plane, and is driven by the stage driving section 42 (driving section). In addition, the substrate stage 40 can move in the Z-axis direction perpendicular to the focal plane (X-Y direction), and can also rotate in the X-Y coordinate plane. The position coordinates of the substrate platform 40 are measured by a measurement unit 43 composed of a laser interferometer or a linear encoder.
控制部50控制平台驅動部42以定位標線片R、基板W並同時控制燈驅動部21。然後，基於步進重複方式執行曝光動作。此時隨著基板平台40的移動，量測部43量測其移動量，並輸出至控制部50。設於控制部50的記憶部51中，儲存標線片R的遮罩圖樣位置座標、形成於基板W之照射(shot)區域設計上的位置座標、步進移動量等。另外，於控制部50設有後述之算出校正資訊的校正單元(校正部)52。 The control section 50 controls the platform driving section 42 to position the reticle R and the substrate W and simultaneously controls the lamp driving section 21. Then, an exposure action is performed based on the step-and-repeat method. At this time, as the substrate stage 40 moves, the measurement unit 43 measures the movement amount and outputs it to the control unit 50. The memory section 51 provided in the control section 50 stores the mask pattern position coordinates of the reticle R, the position coordinates formed on the shot area design of the substrate W, the step movement amount, and the like. The control unit 50 is provided with a correction unit (correction unit) 52 for calculating correction information described later.
攝影部36為拍攝形成於基板W之對位標記(alignment mark)的相機或光學感測器，在照射曝光前拍攝對位標記。另外，攝影部37為拍攝形成於標線片R之對位標記的相機或光學感測器，被安裝成通過圖中未示的移動機構而可在第1圖之X方向上移動。影像處理部38基於送自攝影部36或攝影 部37的影像訊號算出對位標記的位置座標。另外，攝影部36與攝影部37以及影像處理部38係合稱為標記位置檢測單元。 The photographing unit 36 is a camera or an optical sensor that photographs an alignment mark formed on the substrate W, and captures an alignment mark before the exposure. In addition, the imaging unit 37 is a camera or an optical sensor that captures an alignment mark formed on the reticle R, and is mounted so as to be movable in the X direction of FIG. 1 by a moving mechanism not shown in the figure. Image processing unit 38 The image signal of the unit 37 calculates the position coordinates of the registration mark. In addition, the imaging unit 36, the imaging unit 37, and the image processing unit 38 are collectively referred to as a mark position detection unit.
曝光裝置10，依據步進重複方式，將標線片R的遮罩圖樣依序轉寫至形成於基板W的各照射區域。意即，控制部50透過平台驅動部42，根據照射區域間隔間歇地移動基板平台40，當曝光對象之照射區域定位至遮罩圖樣的投影位置時，驅動光源20以將圖樣光投影至照射區域。 The exposure device 10 sequentially transfers the mask pattern of the reticle R to each irradiation area formed on the substrate W according to the step-and-repeat method. That is, the control unit 50 moves the substrate stage 40 intermittently according to the irradiation area interval through the platform driving unit 42. When the irradiation area of the exposure object is positioned to the projection position of the mask pattern, the light source 20 is driven to project the pattern light onto the irradiation area .
對位量測之時，量測部43算出基板平台40在XY平面內的位置(X,Y,θz)。 During the alignment measurement, the measurement unit 43 calculates the position (X, Y, θz) of the substrate stage 40 in the XY plane.
接著，說明建立用於修正基板平台40之驅動精確度的校正資訊的方法。在該方法的說明前，先說明用於該方法的參考板。 Next, a method of establishing correction information for correcting the driving accuracy of the substrate stage 40 will be described. Before describing the method, a reference plate for the method is explained.
第2圖係表示參考板SP之一例的圖。參考板SP為比基板平台40小的板狀部件。作為參考板SP的部件，使用玻璃、矽、陶瓷等。第2圖中雖表示矩形的例子，但也可以是圓形或多角形。 FIG. 2 is a diagram showing an example of the reference plate SP. The reference plate SP is a plate-shaped member smaller than the substrate stage 40. As the components of the reference plate SP, glass, silicon, ceramic, or the like is used. Although an example of a rectangle is shown in FIG. 2, it may be a circle or a polygon.
參考板SP上，如第2圖所示，被授與m×n個參考標記Mij。這些參考標記具有X方向上並列m個參考標記之列與Y方向上並列n個參考標記之列互相垂直的2維矩陣狀位置關係。 As shown in FIG. 2, the reference plate SP is given m × n reference marks Mij. These reference marks have a two-dimensional matrix-like positional relationship in which the columns of m reference marks juxtaposed in the X direction and the columns of n reference marks juxtaposed in the Y direction are perpendicular to each other.
參考標記Mij，在參考板Sp的表面上，形成為攝影部36攝影時有不同對比度(具有與參考板SP表面不同之光反射率)的圖樣。參考標記Mij為影像處理部38可識別為標記的圖樣形狀(例如圓形、矩形、十字形等)。另外，參考標記Mij的大小係基於攝影部36的攝影視野大小適當設定。 The reference mark Mij is formed on the surface of the reference plate Sp as a pattern having a different contrast (having a light reflectance different from that of the surface of the reference plate SP) when the imaging unit 36 shoots. The reference mark Mij is a pattern shape (for example, a circle, a rectangle, a cross, or the like) that the image processing unit 38 can recognize as a mark. The size of the reference mark Mij is appropriately set based on the size of the imaging field of view of the imaging unit 36.
參考標記陣列的間距Px、Py係根據基板平台40的設計規範或待曝光之基板等適當設定。例如，若是封裝基板的製 造，可用與晶片之陣列間距相同的間距設置參考標記Mij。此時，參考標記Mij的中心可設於接近晶片中心的位置上，或者，亦可設於對應至設於待曝光之封裝的對位標記的位置上。或者，亦可不論待曝光之基板而一律用例如10mm之間距設置參考標記。 The pitches Px and Py of the reference mark array are appropriately set according to the design specification of the substrate platform 40 or the substrate to be exposed. For example, if it is a package substrate Therefore, the reference mark Mij can be set with the same pitch as the array pitch of the wafer. At this time, the center of the reference mark Mij may be set at a position close to the center of the wafer, or may also be set at a position corresponding to the alignment mark provided on the package to be exposed. Alternatively, reference marks can be set at a distance of, for example, 10 mm regardless of the substrate to be exposed.
<第1實施型態> <First implementation type>
接著，用第3~6圖之概略圖以及第7圖之流程說明建立用於校正基板平台40之驅動精確度的校正資訊的第1實施型態。 Next, a first embodiment of establishing correction information for correcting the driving accuracy of the substrate stage 40 will be described using the schematic diagrams of FIGS. 3 to 6 and the flowchart of FIG. 7.
以下說明第1實施型態的構成。 The structure of the first embodiment will be described below.
第3圖係表示基板平台40的量測區域的圖。在基板平台40的中央部分設置量測區域AS1，設置將基板平台40之整體區域AS一分為四並具有與量測區域AS1重複之區域的量測區域AS2~AS5。另外，雖然量測區域係表示量測標記位置之範圍的區域，但同時，亦表示為了量測標記位置驅動移動平台時的驅動區域。 FIG. 3 is a diagram showing a measurement area of the substrate stage 40. A measurement area AS1 is provided in the central portion of the substrate platform 40, and measurement areas AS2 to AS5 are provided which divide the entire area AS of the substrate platform 40 into four and have an area overlapping the measurement area AS1. In addition, although the measurement area is an area indicating the range of the measurement mark position, it also indicates a driving area when the mobile platform is driven for the measurement mark position.
以下說明根據第1實施型態之校正方法的步驟(參照第7圖)。 The procedure of the correction method according to the first embodiment is described below (refer to FIG. 7).
步驟101：首先，如第4圖所示，將參考板SP設置於基板平台40***部分的量測區域AS1。此時，在參考板SP的方向(旋轉)大致匹配以使參考標記陣列X方向之列和Y方向之列分別與X軸和Y軸平行的狀態下，設置於基板平台40上。此時，亦可藉由後述的手法求得參考板SP的2點參考標記的位置，以操控參考板SP的XYθ。另外，參考板SP可透過運送裝置(圖中未示)在基板平台40上移動，或者，可由作業者直接設置在基板平台40上。 Step 101: First, as shown in FIG. 4, the reference plate SP is set in the measurement area AS1 in the central portion on the substrate platform 40. At this time, the reference plate SP is arranged on the substrate stage 40 in a state where the directions (rotations) of the reference plate SP are substantially matched so that the X-direction column and the Y-direction column of the reference mark array are parallel to the X-axis and Y-axis, respectively. At this time, the position of the two-point reference mark of the reference plate SP can also be obtained by a method described later to manipulate the XYθ of the reference plate SP. In addition, the reference plate SP may be moved on the substrate stage 40 through a conveying device (not shown), or may be directly set on the substrate stage 40 by an operator.
步驟102：接著，藉由平台驅動部42，移動基板平 台40至攝影部36拍攝預定之參考標記(例如參考標記M11)的位置。接著，攝影部36拍攝參考板SP，影像處理部38算出參考標記Mij的位置。控制部50將送自影像處理部38的參考標記Mij的位置資訊儲存於記憶部51。接著，控制部50參照量測部43量測的基板平台40的現在位置並同時控制平台驅動部42，沿著參考板SP之參考標記Mij之陣列以預定距離(參考標記陣列的設計間距Px或Py)移動基板平台40。與前次相同，攝影部36拍攝參考板SP，影像處理部38算出參考標記Mij的位置，並儲存於記憶部51。據此重複基板平台40的步進移動以量測參考板SP全部的參考標記的位置，並將位置資訊儲存至記憶部51。 Step 102: Next, the substrate driving unit 42 moves the substrate flat. The stage 40 to the imaging section 36 photograph the positions of predetermined reference marks (for example, reference mark M11). Next, the imaging unit 36 images the reference plate SP, and the image processing unit 38 calculates the position of the reference mark Mij. The control unit 50 stores the position information of the reference mark Mij sent from the image processing unit 38 in the storage unit 51. Next, the control unit 50 refers to the current position of the substrate stage 40 measured by the measurement unit 43 and simultaneously controls the platform driving unit 42 along the array of the reference marks Mij of the reference plate SP at a predetermined distance (the design pitch Px of the reference mark array or Py) The substrate stage 40 is moved. As in the previous case, the imaging unit 36 captures the reference plate SP, and the image processing unit 38 calculates the position of the reference mark Mij and stores the position in the memory unit 51. Accordingly, the step movement of the substrate stage 40 is repeated to measure the positions of all the reference marks of the reference plate SP, and the position information is stored in the memory unit 51.
另外，量測區域AS1，由於是量測其他量測區域時參考的量測區域，有必要進行特別高精確度的量測。在此，亦可重複此步驟S102複數次(例如3次)，取每個參考標記Mij量測值的平均，以將其作為參考標記陣列的位置資訊。 In addition, since the measurement area AS1 is a measurement area that is referenced when measuring other measurement areas, it is necessary to perform measurement with particularly high accuracy. Here, the step S102 may be repeated a plurality of times (for example, three times), and an average of the measured values of each reference mark Mij is taken as the position information of the reference mark array.
步驟103：接著，連接至控制部50的校正單元52求出預先儲存至記憶部51的參考標記陣列的設計座標資料與步驟S102中量測的參考標記Mij實際步進移動後的位置座標資料之間的差。此差即為參考標記Mij之位置上的步進移動誤差Dij(△Xij,△Yij)。接著，校正單元52算出相當於反轉此步進移動誤差Dij之符號而得之值的修正值Rij(-△Xij,-△Yij)。分別對各參考標記Mij算出此Rij，接著對應參考標記陣列排列修正值Rij以建立量測區域AS1的修正地圖CM1，並儲存於記憶體51。 Step 103: Next, the correction unit 52 connected to the control unit 50 obtains the design coordinate data of the reference mark array stored in advance in the memory unit 51 and the position coordinate data of the reference mark Mij measured in step S102 after the actual step movement. The difference. This difference is the step movement error Dij (△ Xij, △ Yij) at the position of the reference mark Mij. Next, the correction unit 52 calculates a correction value Rij (-ΔXij, -ΔYij) corresponding to a value obtained by inverting the sign of the step movement error Dij. This Rij is calculated for each reference mark Mij, and then the correction value Rij is arranged corresponding to the reference mark array to establish a correction map CM1 of the measurement area AS1 and stored in the memory 51.
第5圖係表示修正地圖CM1之一例的表格。此表格中例示修正地圖CM1內參考標記陣列M11~M35之範圍的 修正值(△X,-△Y)。例如，參考標記M11中修正值R11(-△X,-△Y)根據表格為(0.24,-0.12)[μm]。另外，M11在基板平台40上的位置以平台座標(X,Y)表示，為(187.0,112.0)[mm]。 FIG. 5 is a table showing an example of the correction map CM1. This table illustrates the range of the reference mark array M11 ~ M35 in the correction map CM1. Correction value (△ X,-△ Y). For example, the correction value R11 (-ΔX, -ΔY) in the reference mark M11 is (0.24, -0.12) [μm] according to the table. In addition, the position of M11 on the substrate stage 40 is represented by the stage coordinates (X, Y) and is (187.0, 112.0) [mm].
步驟104：接著，如第6圖所示，將參考板SP設置於基板平台40上的量測區域AS2。 Step 104: Next, as shown in FIG. 6, the reference plate SP is set on the measurement area AS2 on the substrate platform 40.
步驟105：接著，平台驅動部42將基板平台40移動至攝影部36拍攝預定參考標記(例如參考標記M11)的位置。接著，根據預先儲存於記憶部51的參考標記陣列的設計座標，控制部50透過平台驅動部42驅動基板平台40，攝影部36拍攝存在於量測區域AS1與量測區域AS2之重複區域AS2a上的至少2點(十字標記等姿態角明顯之標記的情況下為至少1點)參考標記，影像處理部38量測其位置。此時，若量測X方向或Y方向上成對的複數個參考標記的位置則可提高量測精確度因而適佳。例如第5圖中，M11與M41、M12與M42之2組相當於X方向上成對的參考標記。另外，M11與M12、M21與M22、M31與M32、M41與M42之4組相當於Y方向上成對的參考標記。 Step 105: Next, the stage driving unit 42 moves the substrate stage 40 to a position where the imaging unit 36 shoots a predetermined reference mark (for example, the reference mark M11). Next, based on the design coordinates of the reference mark array stored in the memory section 51 in advance, the control section 50 drives the substrate platform 40 through the platform driving section 42, and the photographing section 36 shoots the repetitive area AS2 a existing in the measurement area AS1 and the measurement area AS2. The image processing unit 38 measures at least 2 points of the reference mark (at least 1 point in the case of a mark with an obvious attitude angle such as a cross mark), and the image processing unit 38 measures the position. At this time, if the positions of a plurality of reference marks paired in the X direction or the Y direction are measured, the measurement accuracy can be improved, which is suitable. For example, in Figure 5, the two sets of M11 and M41, M12 and M42 correspond to the pair of reference marks in the X direction. In addition, the four groups of M11 and M12, M21 and M22, M31 and M32, M41 and M42 correspond to the pair of reference marks in the Y direction.
在步驟105的量測時，基於修正地圖CM1進行已知的內插處理(例如線性內插)以算出對應基板平台40現在位置的修正值，用此修正值校正基板平台40的驅動精確度。在此，驅動精確度的校正，意指在控制部50中修正量測部43的量測結果(即量測值的修正)，或是在控制部50對平台驅動部42指示基板平台40之移動時修正目標值(即驅動量的修正)。雖然可使用任一修正方法，但在此以進行驅動量的修正為前提說明。 During the measurement in step 105, a known interpolation process (such as linear interpolation) is performed based on the correction map CM1 to calculate a correction value corresponding to the current position of the substrate stage 40, and the driving accuracy of the substrate stage 40 is corrected using this correction value. Here, the correction of the driving accuracy means that the measurement result of the measurement section 43 (that is, the correction of the measurement value) is corrected in the control section 50 or the control section 50 instructs the stage driving section 42 to the substrate stage 40. Correct the target value (that is, the correction of the driving amount) when moving. Although any correction method can be used, the premise of the correction of the driving amount is explained here.
步驟106：接著，控制部50算出連結複數個參考 標記之線段的角度。接著，從此X方向及Y方向之線段，算出參考板SP相對於基板平台40之X軸及Y軸的設置角度以及設置位置。接著，控制部50，基於儲存於記憶部52的參考標記陣列的設計座標資料與參考板的設置角度及位置，進行下個步驟107中使用的基板平台40的移動目標座標資料(即參考標記陣列的設計座標資料)的修正。 Step 106: Next, the control unit 50 calculates a plurality of links The angle of the line segment. Next, from these X-direction and Y-direction line segments, the installation angle and installation position of the reference plate SP with respect to the X-axis and Y-axis of the substrate stage 40 are calculated. Next, the control unit 50 performs the movement target coordinate data of the substrate platform 40 used in the next step 107 (that is, the reference mark array) based on the design coordinate data of the reference mark array stored in the memory unit 52 and the setting angle and position of the reference plate. Design coordinate data).
步驟107：接著，如步驟102之說明，量測參考板SP全部的參考標記的位置，並將位置資訊儲存至記憶部51。 Step 107: Next, as described in step 102, the positions of all the reference marks on the reference plate SP are measured, and the position information is stored in the memory 51.
步驟108：接著，如步驟103之說明，連接至控制部50的校正單元52建立量測區域AS2的修正地圖CM2，並儲存至記憶部51。 Step 108: Next, as described in step 103, the correction unit 52 connected to the control unit 50 establishes a correction map CM2 of the measurement area AS2 and stores the correction map CM2 in the measurement area AS2.
步驟109、110：對量測區域AS3~AS5亦進行相同的處理。換句話說，判斷是否完成全部量測區域的修正地圖建立(步驟109)，若未完成，依序對剩下的量測區域進行與步驟105~步驟108相同的參考板SP的量測，建立修正地圖CM3~CM5，並儲存至記憶部51(步驟110)。 Steps 109 and 110: The same processing is performed on the measurement areas AS3 to AS5. In other words, it is judged whether or not the establishment of the correction map of all the measurement areas is completed (step 109). If it is not completed, the remaining measurement areas are sequentially measured and established on the same reference plate SP as in steps 105 to 108. The maps CM3 to CM5 are corrected and stored in the memory unit 51 (step 110).
步驟111：控制部50，基於修正地圖CM1~CM5，建立基板平台40整體區域AS的修正地圖。對於量測區域的重複部分係使用修正地圖CM1。此時，對於修正地圖的邊界部分，進行相鄰2個修正地圖的非線性修正。 Step 111: The control unit 50 creates a correction map of the entire area AS of the substrate platform 40 based on the correction maps CM1 to CM5. For the repeated part of the measurement area, the correction map CM1 is used. At this time, the boundary portion of the correction map is subjected to nonlinear correction of two adjacent correction maps.
如上所述，基板平台40的修正地圖係儲存於記憶部51內。然後，例如，晶圓曝光時等等，則使用此修正地圖校正基板平台40的驅動精確度。 As described above, the correction map of the substrate stage 40 is stored in the memory unit 51. Then, for example, when the wafer is exposed, etc., the driving accuracy of the substrate stage 40 is corrected using this correction map.
另外，上述實施型態中，雖基於修正地圖CM1~ CM5之5個修正地圖建立基板平台40整體區域AS的修正地圖，但也可以根據修正地圖CM2~CM5之4個修正地圖建立基板平台40整體區域AS的修正地圖 In addition, in the above embodiment, the correction map CM1 ~ The 5 revised maps of CM5 create a revised map of the entire area AS of the substrate platform 40, but it is also possible to create a revised map of the whole area AS of the substrate platform 40 based on the revised maps of the CM2 to CM5 4
<第2實施型態> <Second Implementation Mode>
第1實施型態中，藉由改變在基板平台40上的1個參考板SP的載置位置依序量測量測區域AS1~AS5的平台移動誤差。第2實施型態中，藉由使用第8圖所示的複數個參考板SPa(參考板Spa可使用參考板SP)、SPb、SPc、SPd連續實施量測區域AS2~AS5的平台移動誤差的量測。 In the first embodiment, the platform movement errors of the measurement areas AS1 to AS5 are sequentially measured by changing the placement position of one reference plate SP on the substrate platform 40. In the second implementation type, by using a plurality of reference plates SPa (the reference plate SP can use the reference plate SP), SPb, SPc, and SPd shown in FIG. 8, the platform movement errors of the measurement areas AS2 to AS5 are continuously implemented. Measure.
此情況下，參考板SPa~SPd在參考標記的陣列上被視為與參考板SP有相同特性者為佳。另外，希望在同一材質、同一板厚下有良好的平面度，以使得載置於基板平台40上時所拍攝的參考標記陣列上不會出現個體差異。 In this case, it is better that the reference plates SPa to SPd are regarded as having the same characteristics as the reference plate SP on the reference mark array. In addition, it is desirable to have good flatness under the same material and the same thickness so that the reference mark array photographed when placed on the substrate platform 40 will not have individual differences.
根據第2實施型態建立用於校正基板平台40之驅動精確度的校正資訊的方法係根據第9圖說明。步驟201~203與第1實施型態的步驟101~103同程序。接著，分別在量測區域AS2~AS5載置參考板Spa~SPd(步驟204)。 The method of establishing the correction information for correcting the driving accuracy of the substrate stage 40 according to the second embodiment is described with reference to FIG. 9. Steps 201 to 203 are the same as steps 101 to 103 of the first embodiment. Next, the reference boards Spa ~ SPd are placed in the measurement areas AS2 ~ AS5, respectively (step 204).
接著，與第1實施型態之步驟105~步驟110一樣地建立各量測區域的修正地圖，並與步驟111一樣生成基板平台40整體區域AS的修正地圖(步驟205~步驟209)。 Next, as in steps 105 to 110 of the first embodiment, a correction map of each measurement area is created, and a correction map of the entire area AS of the substrate stage 40 is generated in the same manner as step 111 (steps 205 to 209).
根據第2實施型態，至基板平台40的參考板載置係以一階段進行，可連續量測標記位置，因此提高作業性。另外，可縮短校正所需的時間。 According to the second embodiment, the reference plate placement to the substrate stage 40 is performed in one stage, and the mark position can be continuously measured, thereby improving workability. In addition, the time required for correction can be shortened.
<第3實施型態> <Third embodiment type>
雖然第2實施型態中，量測區域AS2~AS5的平台移動誤差的量測是藉由使用複數個參考板Spa~SPd連續實施，但在第3實施型態中，將此複數個參考板固定至1個基材上，當作1個參考板。 Although in the second embodiment, the measurement of the platform movement error in the measurement areas AS2 to AS5 is continuously performed by using a plurality of reference plates Spa ~ SPd, in the third embodiment, the plurality of reference plates are used. It is fixed to a substrate and used as a reference plate.
第10圖係第2參考板SP2的一例。第2參考板SP2由與基板平台40之基板載置面相同程度大小的基材PB和貼附固定至此基材PB的4個參考板部件PSP1~PSP4構成。 Fig. 10 is an example of the second reference plate SP2. The second reference plate SP2 is composed of a base material PB having the same size as the substrate mounting surface of the base plate 40 and four reference plate components PSP1 to PSP4 attached and fixed to the base material PB.
第2參考板SP2的基材PB最好使用熱膨脹係數與參考板部件PSP1~PSP4接近的材料，例如使用陶瓷。 The base material PB of the second reference plate SP2 is preferably made of a material whose thermal expansion coefficient is close to that of the reference plate components PSP1 to PSP4, for example, ceramics.
第2參考板SP2的參考板部件PSP1~PSP4，分別以與參考板SP相同的間距，2維矩陣狀地形成相同形狀的參考標記M2ij。第2參考板SP2的參考板部件PSP1~PSP4，用與參考板SP相同材料、相同製法製造為佳。 The reference plate components PSP1 to PSP4 of the second reference plate SP2 respectively form reference marks M2ij of the same shape in a two-dimensional matrix at the same pitch as the reference plate SP. The reference plate components PSP1 to PSP4 of the second reference plate SP2 are preferably manufactured using the same material and the same manufacturing method as the reference plate SP.
像第10圖所示的參考板部件PSP1~PSP4，因黏著等程序，而有分別產生不同附著誤差的可能性。因此，第2參考板SP2不可被視為1個連續參考板使用。在此，與第2實施型態相同，對於參考板部件PSP1~PSP4，分別求出至基板平台40的載置誤差，根據各載置誤差量測參考板部件PSP1~PSP4每一者的平台移動誤差，藉此建立基板平台40的修正地圖。 The reference plate components PSP1 to PSP4 shown in Figure 10 may have different adhesion errors due to procedures such as adhesion. Therefore, the second reference board SP2 cannot be used as a continuous reference board. Here, in the same manner as in the second embodiment, for the reference plate components PSP1 to PSP4, the placement errors to the substrate stage 40 are respectively determined, and the platform movement of each of the reference plate components PSP1 to PSP4 is measured based on each placement error. Errors, thereby establishing a corrected map of the substrate platform 40.
根據第3實施型態建立用於校正基板平台40之驅動精確度的校正資訊的方法係根據第11圖說明。步驟301~303與第2實施型態的步驟201~203同程序。接著，在整體區域AS分別載置第2參考板SP2(步驟304)。接著，與第2實施型態的步驟205~211一樣地建立各量測區域的修正地圖，並生成基板平台40整體區域AS的修正地圖(步驟305~步驟309)。 The method of establishing the correction information for correcting the driving accuracy of the substrate stage 40 according to the third embodiment is explained with reference to FIG. 11. Steps 301 to 303 are the same as steps 201 to 203 of the second embodiment. Next, the second reference plate SP2 is placed in the entire area AS (step 304). Next, as in steps 205 to 211 of the second embodiment, a correction map of each measurement area is created, and a correction map of the entire area AS of the substrate platform 40 is generated (steps 305 to 309).
根據第3實施型態，由於可一次進行至基板平台40的參考板載置，更提高作業性。另外，可縮短校正所需的時間。 According to the third embodiment, since the reference plate can be placed on the substrate stage 40 at a time, workability is further improved. In addition, the time required for correction can be shortened.
如以上所述，根據本發明，使用比平台驅動區域小的參考板，可建立用於修正移動平台之驅動精確度的校正資訊。 As described above, according to the present invention, using a reference plate smaller than the driving area of the platform, it is possible to establish correction information for correcting the driving accuracy of the mobile platform.
另外，雖然以移動平台為基板平台40的情況為例進行說明，但即使是標線片平台30亦可同樣地校正驅動精確度。此情況下，使用攝影部37檢測載置於標線片平台上的參考板的標記。 In addition, although the case where the mobile stage is the substrate stage 40 will be described as an example, even the reticle stage 30 can similarly correct the driving accuracy. In this case, the imaging unit 37 is used to detect the mark of the reference plate placed on the reticle stage.
另外，雖然以四分割後之基板平台40之區域為第2量測區域的情況為例進行說明，但分割的數目與配置並沒有限制。例如像第12圖，基板平台40可設有中央部分的第1量測區域AS1、與第1量測區域部分重複的第2量測區域AS2~AS5、與第2量測區域AS2~AS5任一者部分重複的第3量測區域AS6~AS13。此情況下，校正部52基於對應量測區域AS1~AS13的修正地圖CM1~CM13，建立修正驅動部之驅動精確度的校正資訊。 In addition, although the case where the area of the substrate stage 40 after the four divisions is the second measurement area is described as an example, the number and arrangement of the divisions are not limited. For example, as shown in FIG. 12, the substrate stage 40 may be provided with a first measurement area AS1 in the center portion, a second measurement area AS2 to AS5 that overlaps with the first measurement area portion, and any of the second measurement areas AS2 to AS5. The third measurement area AS6 ~ AS13 is partially repeated. In this case, the correction section 52 establishes correction information of the driving accuracy of the correction driving section based on the correction maps CM1 to CM13 corresponding to the measurement areas AS1 to AS13.
另外，作為曝光裝置的用途並不限定於半導體封裝製造用的曝光裝置，亦可廣泛適用液晶顯示面板用的曝光裝置、印刷基板用的曝光裝置等。 In addition, the application as an exposure device is not limited to an exposure device for manufacturing a semiconductor package, and can be widely applied to an exposure device for a liquid crystal display panel, an exposure device for a printed circuit board, and the like.
另外，曝光裝置10並不限定於實施型態的投影曝光裝置，例如，即使是無標線片的無遮罩曝光裝置亦可實施本發明。另外，本發明亦可用作曝光裝置以外之裝置的平台校正系統。 In addition, the exposure apparatus 10 is not limited to the projection exposure apparatus of an implementation form, For example, even a maskless exposure apparatus without a reticle can implement this invention. In addition, the present invention can also be used as a platform correction system for a device other than an exposure device.
10‧‧‧曝光裝置 10‧‧‧Exposure device
20‧‧‧光源 20‧‧‧ light source
21‧‧‧燈驅動部 21‧‧‧lamp driver
22、26‧‧‧鏡 22, 26‧‧‧ mirror
24‧‧‧積分器 24‧‧‧ Integrator
28‧‧‧準直透鏡 28‧‧‧ Collimating lens
30‧‧‧標線片平台 30‧‧‧Reticle Platform
32、42‧‧‧平台驅動部 32, 42‧‧‧ Platform Driver
34‧‧‧投影光學系統 34‧‧‧ projection optical system
36、37‧‧‧攝影部 36, 37‧‧‧Photography Department
38‧‧‧影像處理部 38‧‧‧Image Processing Department
40‧‧‧基板平台 40‧‧‧ substrate platform
43‧‧‧量測部 43‧‧‧Measurement Department
50‧‧‧控制部 50‧‧‧Control Department
51‧‧‧記憶部 51‧‧‧Memory Department
52‧‧‧校正部 52‧‧‧Correction Department
R‧‧‧標線片 R‧‧‧ reticle
W‧‧‧基板 W‧‧‧ substrate
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| JP2016-071963 | 2016-03-31 |
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| US5751404A (en) * | 1995-07-24 | 1998-05-12 | Canon Kabushiki Kaisha | Exposure apparatus and method wherein alignment is carried out by comparing marks which are incident on both reticle stage and wafer stage reference plates |
| KR100525521B1 (en) * | 1996-10-21 | 2006-01-27 | 가부시키가이샤 니콘 | Exposure apparatus and exposure method |
| JP2002280288A (en) * | 2001-03-19 | 2002-09-27 | Nikon Corp | Reference wafer for calibration, method of calibration, method and device for detecting position, and aligner |
| US7894075B2 (en) * | 2006-12-11 | 2011-02-22 | Zygo Corporation | Multiple-degree of freedom interferometer with compensation for gas effects |
| US7684011B2 (en) * | 2007-03-02 | 2010-03-23 | Asml Netherlands B.V. | Calibration method for a lithographic apparatus |
| JP5257832B2 (en) * | 2007-12-28 | 2013-08-07 | 株式会社ニコン | Calibration method, moving body driving method and moving body driving apparatus, exposure method and exposure apparatus, pattern forming method and pattern forming apparatus, and device manufacturing method |
| JP2010192470A (en) * | 2009-02-13 | 2010-09-02 | Canon Inc | Measurement apparatus, exposure apparatus, and device manufacturing method |
| US8514395B2 (en) * | 2009-08-25 | 2013-08-20 | Nikon Corporation | Exposure method, exposure apparatus, and device manufacturing method |
| JP2011129654A (en) * | 2009-12-16 | 2011-06-30 | Canon Inc | Position measuring device, and exposure apparatus using the same |
| JP3177293U (en) * | 2012-05-16 | 2012-07-26 | 株式会社エイチアンドエフ | Camera calibration board |
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