TW201731126A - 具有布拉格反射層位於窗戶層之間之發光元件 - Google Patents
具有布拉格反射層位於窗戶層之間之發光元件 Download PDFInfo
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- TW201731126A TW201731126A TW106118574A TW106118574A TW201731126A TW 201731126 A TW201731126 A TW 201731126A TW 106118574 A TW106118574 A TW 106118574A TW 106118574 A TW106118574 A TW 106118574A TW 201731126 A TW201731126 A TW 201731126A
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- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
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- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 2
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 2
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- 239000005020 polyethylene terephthalate Substances 0.000 description 2
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
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- WJMXTYZCTXTFJM-UHFFFAOYSA-N 1,1,1,2-tetraethoxydecane Chemical compound C(C)OC(C(OCC)(OCC)OCC)CCCCCCCC WJMXTYZCTXTFJM-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910010936 LiGaO2 Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
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- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- AUONHKJOIZSQGR-UHFFFAOYSA-N oxophosphane Chemical compound P=O AUONHKJOIZSQGR-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
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- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- NDKWCCLKSWNDBG-UHFFFAOYSA-N zinc;dioxido(dioxo)chromium Chemical compound [Zn+2].[O-][Cr]([O-])(=O)=O NDKWCCLKSWNDBG-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/04—Refractors for light sources of lens shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/237—Details of housings or cases, i.e. the parts between the light-generating element and the bases; Arrangement of components within housings or cases
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/77—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/02—Globes; Bowls; Cover glasses characterised by the shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Led Devices (AREA)
Abstract
一發光元件,包含:一透明基板;一發光疊層,位於透明基板之上;一第一窗戶層,位於透明基板之下;一布拉格反射層,位於第一窗戶層之下;以及一第二窗戶層,位於布拉格反射層之下;其中,第一窗戶層包含一第一絕緣材料;第二窗戶層包含一第二絕緣材料;布拉格反射層具有複數個次層;複數個次層之一的材料與第二絕緣材料相同;以及第二窗戶層之厚度係介於300奈米與1000奈米。
Description
本發明關於一種發光元件,特別是關於一種具有布拉格反射層(Distributed Bragg Reflector;DBR)位於窗戶層之間之發光元件。
發光二極體(Light-emitting Diode;LED)係一種固態半導體元件,其至少包含一p-n接面(p-n junction)形成於p型與n型半導體層之間。當於LED施加一定程度之偏壓時,出自p型半導體層中之電洞與出自n型半導體層中之電子會結合而釋放出光。此光產生之區域一般又稱為發光區(light-emitting region)或主動層。
LED的主要特徵在於尺寸小、可靠度高、發光效率高、壽命長、反應快速和色度良好,目前已經廣泛地使用在光學顯示裝置、交通號誌、資料儲存裝置、通訊裝置、照明裝置與醫療器材上。隨著全彩LED的問世,LED已逐漸取代傳統的照明設備,如螢光燈和白熱燈泡。
如圖2所示,一習知發光裝置2包含一基板20;一發光結構22位於基板20之上;一第一電極24與一第二電極26位於發光結構22之上;以及一布拉格反射層(Distributed Bragg Reflector;DBR)28位於基板20之下,其中布拉格反射層28具有次層282與284交互堆疊。產生自發光結構22之光會被布拉格反射層28反射。然而有些光會被侷限在布拉格反射層28之次層282與284之中,在數次內部全反射之後轉變為熱能。此外,基板20的側面太小而導致被布拉格反射層28反射之光無法被摘出,因此降低習知發光元件2之光摘出效率。
一發光元件,包含:一透明基板;一發光疊層,位於透明基板之上;一第一窗戶層,位於透明基板之下;一布拉格反射層,位於第一窗戶層之下;以及一第二窗戶層,位於布拉格反射層之下;其中,第一窗戶層包含一第一絕緣材料;第二窗戶層包含一第二絕緣材料;布拉格反射層具有複數個次層;複數個次層之一的材料與第二絕緣材料相同;以及第二窗戶層之厚度係介於300奈米與1000奈米。
本發明之實施例會被詳細地描述,並且繪製於圖式中,相同或類似的部分會以相同的號碼在各圖式以及說明出現。
圖1繪示一發光元件1具有一基板10;一發光疊層12形成於基板10之上;以及一光摘出結構18形成於基板10之下。發光疊層12具有一第一半導體層122;一第二半導體層126;以及一主動層124位於第一半導體層122與第二半導體層126之間。此外,一第一電極14形成於第一半導體層122之上,一第二電極16形成於第二半導體層126之上。
光摘出結構18具有一第一窗戶層182位於基板10之下;一第二窗戶層186位於第一窗戶層182之下,以及一布拉格反射層184位於第一窗戶層182與第二窗戶層186之間,其中布拉格反射層184具有複數個次層。如圖1所示,第一窗戶層182與第二窗戶層186中至少其一可提升光摘出效率,以及以剖面觀之,具有與基板10大致相等之寬度。然而另一實施例中,自剖面觀之,第一窗戶層182亦可具有大於或小於第二窗戶層186之寬度,用以調整發光元件1之光場以符合產品應用。布拉格反射層184可反射產生自發光疊層12之光。基本上布拉格反射層184具有數個具有不同折射率的材料對,其中折射率的差異至少為0.5,較佳至少為1。 【表1】
第一窗戶層182、第二窗戶層186或兩者皆不會覆蓋或實質接觸發光疊層12之側面,所以發光疊層12產生之熱可較易散逸。每一第一窗戶層182與第二窗戶層186之厚度約介於300奈米與1000奈米,較佳約介450奈米與550奈米以提升發光元件1之光摘出效率。表1顯示例1與例2的實驗數據,例1表示發光元件之第二窗戶層186之厚度係70奈米,例2表示發光元件之第二窗戶層186之厚度係500奈米。如表1所示,例2顯示具有較例1為大的功率,這表示例2的發光元件較例1的發光元件具有較高的光摘出效率。布拉格反射層184的每一次層之厚度約介於30奈米與80奈米,較佳約介於40奈米與60奈米。布拉格反射層184次層之對數係介於5與50,較佳介於5與15。布拉格反射層184之總厚度約介於300奈米與8000奈米,較佳約介於500奈米與1500奈米。第一窗戶層182或第二窗戶層186之厚度相對於布拉格反射層184之總厚度之比值約介於0.03與3.33,較佳約介於0.3與1.1,以提升發光元件1之光摘出效率。第一窗戶層182、第二窗戶層186或兩者之厚度皆足夠厚,所以被侷限於布拉格反射層184或發光疊層12之光可於第一窗戶層182、第二窗戶層186或兩者之側面被摘出。窗戶層之材料相對於發光疊層12所發之光為透明,可為導電材料或絕緣材料。導電材料可為氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋅(ZnO)、氧化鎂(MgO)、砷化鋁鎵(AlGaAs)、氮化鎵(GaN)、磷化鎵(GaP)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鎵鋅(GZO)或氧化銦鋅(IZO)。絕緣材料可為Su8、苯并環丁烯(BCB)、過氟環丁烷(PFCB)、環氧樹脂(Epoxy)、丙烯酸樹脂(Acrylic Resin)、環烯烴聚合物(COC)、聚甲基丙烯酸甲酯(PMMA)、聚對苯二甲酸乙二酯(PET)、聚亞醯胺(PI)、聚碳酸酯(PC)、聚醚醯亞胺(Polyetherimide)、氟碳聚合物(Fluorocarbon Polymer)、玻璃(Glass)、氧化鉭(Ta2O5)、氧化鋁(Al2O3)、二氧化矽(SiO2)、氧化鈦(TiO2)、氮化矽(SiNx)、旋塗玻璃(SOG)或四乙氧基矽烷(TEOS)。每一次層之材料可與窗戶層之材料相同。
另一實施例中,第一窗戶層182、第二窗戶層186或兩者可作為布拉格反射結構之一部分。布拉格反射結構中的每一次層之厚度都遵循關係式d=m(λ/4n),其中d表示次層之厚度,λ表示被布拉格反射層結構反射之光之波長,n表示次層之折射率,m表示任一正整數。例如當被布拉格反射層結構反射之光之波長約為460奈米,第一次層182與第二次層186之折射率約為1.5時,m為不小於3,較佳為介於3與7,以提升光摘出效率。
基板10可用以成長及/或支持位於其上之發光疊層12,其材料相對於發光疊層12產生之光為透明,可包含絕緣材料、導電材料或兩者。絕緣材料可為藍寶石(Sapphire)、鑽石(Diamond)、玻璃(Glass)、石英(Quartz)、壓克力(Acryl)或氮化鋁(AlN)。導電材料可為碳化矽(SiC)、磷化碘(IP)、砷化鎵(GaAs)、鍺(Ge)、磷化鎵(GaP)、磷砷化鎵(GaAsP)、硒化鋅(ZnSe)、磷化銦(InP)、氧化鋅(ZnO)、鎵酸鋰(LiGaO2)或鋁酸鋰(LiAlO2)。
發光疊層12可直接成長於基板10之上,或藉由黏結層(未顯示)貼附至基板10之上。發光疊層12之材料可為半導體材料,包含一種以上之元素,此元素可選自鎵(Ga)、鋁(Al)、銦(In)、磷(P)、氮(N)、鋅(Zn)、鎘(Cd)與硒(Se)所構成之群組。第一半導體層122與第二半導體層126的電性相異,用以產生電子或電洞。主動層124可產生一種或多種色光,可為可見光或不可見光,其結構可為單異質結構、雙異質結構、雙側雙異質結構或多層量子井。
第一電極14、第二電極16或兩者用以接受外部電壓,可由透明導電材料、金屬材料或兩者所構成。透明導電材料包含但不限於氧化銦錫(ITO)、氧化銦(InO)、氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ATO)、氧化鋁鋅(AZO)、氧化鋅錫(ZTO)、氧化鋅(ZnO)、氧化銦鋅(IZO)、類鑽碳薄膜(DLC)、氧化鎵鋅(GZO)或上述材料之組合。金屬材料包含但不限於銅(Cu)、鋁(Al)、銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鎳(Ni)、鉛(Pb)、鈀(Pd)、鍺(Ge)、鉻(Cr)、鈷(Co)、鎘(Cd)、錳(Mn)、銻(Sb) 鉍(Bi)、鎵(Ga)、鎢(W)、鈹(Be)或上述材料之合金等。
圖3係繪示出本申請案另一實施例之一燈泡分解示意圖,一燈泡3具有一燈罩31;一透鏡32,置於燈罩31之中;一照明模組34,位於透鏡32之下;一燈座35,具有一散熱槽36,用以承載照明模組34;一連結部37;以及一電連結器38,其中連結部37連結燈座35與電連接器38。照明模組34具有一載體33;以及複數個前述任一實施例之發光元件30,位於載體33之上。
惟上述實施例僅為例示性說明本申請案之原理及其功效,而非用於限制本申請案。任何本申請案所屬技術領域中具有通常知識者均可在不違背本申請案之技術原理及精神的情況下,對上述實施例進行修改及變化。因此本申請案之權利保護範圍如後述之申請專利範圍所列。
1、2、30‧‧‧發光元件
10、20‧‧‧基板
12、22‧‧‧發光疊層
122‧‧‧第一半導體層
124‧‧‧主動層
126‧‧‧第二半導體層
14、24‧‧‧第一電極
16、26‧‧‧第二電極
18‧‧‧光摘出結構
182‧‧‧第一窗戶層
184、28‧‧‧布拉格反射層
186‧‧‧第二窗戶層
282、284‧‧‧次層
3‧‧‧燈泡
31‧‧‧燈罩
32‧‧‧透鏡
33‧‧‧載體
34‧‧‧照明模組
35‧‧‧燈座
36‧‧‧散熱槽
37‧‧‧連結部
38‧‧‧電連結器
10、20‧‧‧基板
12、22‧‧‧發光疊層
122‧‧‧第一半導體層
124‧‧‧主動層
126‧‧‧第二半導體層
14、24‧‧‧第一電極
16、26‧‧‧第二電極
18‧‧‧光摘出結構
182‧‧‧第一窗戶層
184、28‧‧‧布拉格反射層
186‧‧‧第二窗戶層
282、284‧‧‧次層
3‧‧‧燈泡
31‧‧‧燈罩
32‧‧‧透鏡
33‧‧‧載體
34‧‧‧照明模組
35‧‧‧燈座
36‧‧‧散熱槽
37‧‧‧連結部
38‧‧‧電連結器
[圖1]繪示本申請案一實施例之發光元件之剖面圖。 [圖2]繪示習知之發光元件之剖面圖。 [圖3]繪示本申請案另一實施例之燈泡分解示意圖。
1‧‧‧發光元件
10‧‧‧基板
12‧‧‧發光疊層
122‧‧‧第一半導體層
124‧‧‧主動層
126‧‧‧第二半導體層
14‧‧‧第一電極
16‧‧‧第二電極
18‧‧‧光摘出結構
182‧‧‧第一窗戶層
184‧‧‧布拉格反射層
186‧‧‧第二窗戶層
Claims (10)
- 一發光元件,包含: 一透明基板; 一發光疊層,位於該透明基板之上; 一第一窗戶層,位於該透明基板之下; 一布拉格反射層,位於該第一窗戶層之下;以及 一第二窗戶層,位於該布拉格反射層之下; 其中,該第一窗戶層包含一第一絕緣材料; 該第二窗戶層包含一第二絕緣材料; 該布拉格反射層具有複數個次層; 該些次層之一的材料與該第二絕緣材料相同;以及 該第二窗戶層之厚度係介於300奈米與1000奈米。
- 如請求項第1項所述的發光元件,其中該第一窗戶層之厚度係介於300奈米與1000奈米。
- 如請求項第1項所述的發光元件,其中該複數個次層之一的材料與該第一絕緣材料相同。
- 如請求項第1項所述的發光元件,其中該第二窗戶層相對於該布拉格反射層之總厚度比值係介於0.3與1.1。
- 如請求項第1項所述的發光元件,其中該第二窗戶層接觸該布拉格反射層。
- 如請求項第1項所述的發光元件,其中該第二窗戶層之厚度大於該些次層之個別厚度。
- 如請求項第1項所述的發光元件,其中該布拉格反射層包含交互堆疊的複數個第一次層以及複數個第二次層,該第一次層與該第二次層分別為折射率不同的絕緣材料,且該第一次層與該第二次層之折射率之差至少為0.5。
- 如請求項第7項所述的發光元件,其中該複數個第一次層或/且該複數個第二次層之個別厚度係介於30奈米與80奈米。
- 如請求項第1項所述的發光元件,其中該布拉格反射層之總厚度介於300奈米與8000奈米。
- 如請求項第1項所述的發光元件,其中該第一窗戶層與該第二窗層分別為一單層結構。
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TWI790984B (zh) * | 2017-01-26 | 2023-01-21 | 晶元光電股份有限公司 | 發光元件 |
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2013
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2016
- 2016-11-22 US US15/359,372 patent/US20170077358A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TWI591855B (zh) | 2017-07-11 |
TWI631731B (zh) | 2018-08-01 |
CN103545414B (zh) | 2018-04-20 |
US20140014991A1 (en) | 2014-01-16 |
US20170077358A1 (en) | 2017-03-16 |
CN103545414A (zh) | 2014-01-29 |
TW201403869A (zh) | 2014-01-16 |
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