TW201729944A - Apparatus and method for regulating surface temperature of polishing pad - Google Patents
Apparatus and method for regulating surface temperature of polishing pad Download PDFInfo
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- TW201729944A TW201729944A TW106105566A TW106105566A TW201729944A TW 201729944 A TW201729944 A TW 201729944A TW 106105566 A TW106105566 A TW 106105566A TW 106105566 A TW106105566 A TW 106105566A TW 201729944 A TW201729944 A TW 201729944A
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- pad
- flow path
- heating
- polishing pad
- control valve
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- 238000005498 polishing Methods 0.000 title claims abstract description 198
- 238000000034 method Methods 0.000 title claims description 8
- 230000001105 regulatory effect Effects 0.000 title abstract 2
- 238000010438 heat treatment Methods 0.000 claims abstract description 182
- 239000007788 liquid Substances 0.000 claims abstract description 141
- 238000001816 cooling Methods 0.000 claims abstract description 70
- 239000000110 cooling liquid Substances 0.000 claims abstract description 29
- 239000002826 coolant Substances 0.000 claims description 43
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 42
- 238000010586 diagram Methods 0.000 description 14
- 230000008859 change Effects 0.000 description 13
- 238000009826 distribution Methods 0.000 description 11
- 229940044949 eucalyptus oil Drugs 0.000 description 6
- 239000010642 eucalyptus oil Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本發明係關於一種用以調整使用於研磨晶圓等基板之研磨墊的表面溫度之裝置及方法。 The present invention relates to an apparatus and method for adjusting the surface temperature of a polishing pad used for polishing a substrate such as a wafer.
CMP(化學機械研磨(Chemical Mechanical Polishing))裝置在半導體元件之製造中使用於研磨晶圓表面的工序。CMP裝置以上方環形轉盤保持晶圓而使晶圓旋轉,進一步將晶圓按壓於旋轉之研磨台上的研磨墊來研磨晶圓表面。研磨中,在研磨墊上供給研磨液(漿液),晶圓表面藉由研磨液之化學性作用與研磨液中包含之研磨粒的機械性作用而平坦化。 A CMP (Chemical Mechanical Polishing) device is used for polishing a wafer surface in the manufacture of a semiconductor device. The CMP device rotates the wafer by holding the wafer on the upper annular turntable, and further presses the wafer against the polishing pad on the rotating polishing table to polish the wafer surface. During polishing, a polishing liquid (slurry) is supplied to the polishing pad, and the surface of the wafer is planarized by the chemical action of the polishing liquid and the mechanical action of the abrasive grains contained in the polishing liquid.
晶圓之研磨率除了晶圓對研磨墊的研磨負荷之外,還取決於研磨墊的表面溫度。此因研磨液對晶圓之化學性作用取決於溫度。因此,在半導體元件的製造中,為了提高晶圓之研磨率並進一步保持一定,將晶圓研磨中之研磨墊的表面溫度保持在最佳值很重要。 The polishing rate of the wafer depends on the surface temperature of the polishing pad in addition to the polishing load of the wafer on the polishing pad. This is due to the chemical nature of the slurry on the wafer depending on the temperature. Therefore, in the manufacture of a semiconductor element, in order to increase the polishing rate of the wafer and further maintain it constant, it is important to maintain the surface temperature of the polishing pad in the wafer polishing at an optimum value.
因此,過去為了調整研磨墊之表面溫度而使用墊溫度調整裝置。第二十五圖係顯示過去之墊溫度調整裝置的模式圖。如第二十五圖所示,墊溫度調整裝置具備:接觸於研磨墊103表面之墊接觸構件111;及連接於墊接觸構件111之流體供給管112。流體供給管112分歧成:連接於溫水供給源之溫水供給管115;及連接於冷水供給源之冷水供給管116;溫水供給管115及冷水供給管116中分別安裝有溫水閥門120及冷水閥門121。藉由 關閉溫水閥門120或冷水閥門121之其中一個,可選擇性地將溫水或冷水之其中一個供給至墊接觸構件111。 Therefore, in the past, a pad temperature adjusting device was used in order to adjust the surface temperature of the polishing pad. The twenty-fifth diagram shows a schematic diagram of the past pad temperature adjustment device. As shown in the twenty-fifth diagram, the pad temperature adjusting device includes: a pad contact member 111 that is in contact with the surface of the polishing pad 103; and a fluid supply tube 112 that is connected to the pad contact member 111. The fluid supply pipe 112 is divided into: a warm water supply pipe 115 connected to the warm water supply source; and a cold water supply pipe 116 connected to the cold water supply source; the warm water supply pipe 115 and the cold water supply pipe 116 are respectively installed with the warm water valve 120 And a cold water valve 121. By One of the warm water valve 120 or the cold water valve 121 is closed, and one of warm water or cold water may be selectively supplied to the pad contact member 111.
第二十六圖係顯示溫水閥門120及冷水閥門121之動作、與研磨墊103之表面溫度變化的圖。溫水閥門120及冷水閥門121依據研磨墊103之表面溫度而操作。亦即,當研磨墊103之表面溫度超過預定的上限值時,關閉溫水閥門120且打開冷水閥門121。同樣地當研磨墊103之表面溫度低於預設的下限值時,關閉冷水閥門121且打開溫水閥門120。 The twenty-sixth drawing shows a graph showing the operation of the warm water valve 120 and the cold water valve 121 and the temperature change of the surface of the polishing pad 103. The warm water valve 120 and the cold water valve 121 operate in accordance with the surface temperature of the polishing pad 103. That is, when the surface temperature of the polishing pad 103 exceeds a predetermined upper limit value, the warm water valve 120 is closed and the cold water valve 121 is opened. Similarly, when the surface temperature of the polishing pad 103 is lower than the preset lower limit value, the cold water valve 121 is closed and the warm water valve 120 is opened.
【先前技術文獻】 [Previous Technical Literature]
【專利文獻】 [Patent Literature]
[專利文獻1]日本特開2015-044245號公報 [Patent Document 1] Japanese Laid-Open Patent Publication No. 2015-044245
但是,即使將供給至墊接觸構件111之液體從溫水切換成冷水,由於墊接觸構件111及流體供給管112中仍殘留溫水,因此墊接觸構件111達到冷卻還需要等待一段時間。同樣地,即使將供給至墊接觸構件111之液體從冷水切換成溫水,墊接觸構件111達到溫暖還需要等待一段時間。因而,研磨墊103表面溫度之變化產生過調(Overshoot)及欠調(Undershoot)。結果研磨墊103之表面溫度大幅變動。 However, even if the liquid supplied to the pad contact member 111 is switched from warm water to cold water, since warm water remains in the pad contact member 111 and the fluid supply pipe 112, it takes a while for the pad contact member 111 to cool down. Likewise, even if the liquid supplied to the pad contact member 111 is switched from cold water to warm water, it takes a while for the pad contact member 111 to reach warmth. Thus, changes in the surface temperature of the polishing pad 103 cause overshoot and undershoot. As a result, the surface temperature of the polishing pad 103 largely changes.
第二十七圖係顯示將研磨墊103之目標溫度設定為60℃時研磨墊103表面溫度的變化曲線圖。如第二十七圖所示,研磨墊103之表面溫度約以20℃的幅度大為變化。第二十八圖係顯示調整PID控制之參數後研磨墊103表面溫度的變化曲線圖。此時,研磨墊103之表面溫度仍以某種程度 的幅度變化。再者,第二十九圖係顯示調整PID控制之參數後,將目標溫度從60℃變更為50℃時研磨墊103表面溫度的變化曲線圖。如第二十九圖所示,研磨墊103之表面溫度再度大為變化。 The twenty-seventh graph shows a graph showing changes in the surface temperature of the polishing pad 103 when the target temperature of the polishing pad 103 is set to 60 °C. As shown in Fig. 27, the surface temperature of the polishing pad 103 largely changes by about 20 °C. The twenty-eighth figure shows a graph showing changes in the surface temperature of the polishing pad 103 after adjusting the parameters of the PID control. At this time, the surface temperature of the polishing pad 103 is still to some extent The magnitude of the change. Further, the twenty-ninth figure shows a graph showing changes in the surface temperature of the polishing pad 103 when the target temperature is changed from 60 ° C to 50 ° C after adjusting the parameters of the PID control. As shown in the twenty-ninth figure, the surface temperature of the polishing pad 103 is again greatly changed.
如此,過去之墊溫度調整裝置在晶圓研磨中存在研磨墊103之表面溫度大幅變動,無法獲得希望之研磨率(亦稱為除去率)的問題。 As described above, in the past pad temperature adjusting device, the surface temperature of the polishing pad 103 largely fluctuates during wafer polishing, and the desired polishing rate (also referred to as removal rate) cannot be obtained.
因此,本發明之目的為提供一種可將研磨墊之表面溫度保持在希望之目標溫度的裝置及方法。 Accordingly, it is an object of the present invention to provide an apparatus and method for maintaining the surface temperature of a polishing pad at a desired target temperature.
為了達成上述目的,本發明一種樣態係用以調整研磨墊之表面溫度的裝置,其特徵為具備:墊接觸構件,其係可接觸於前述研磨墊之表面,且在內部形成有加熱流路及冷卻流路;加熱液供給管,其係連接於前述加熱流路;冷卻液供給管,其係連接於前述冷卻流路;第一流量控制閥門,其係安裝於前述加熱液供給管;第二流量控制閥門,其係安裝於前述冷卻液供給管;墊溫度測定器,其係測定前述研磨墊之表面溫度;及閥門控制部,其係依據前述研磨墊之表面溫度操作前述第一流量控制閥門及前述第二流量控制閥門。 In order to achieve the above object, a device for adjusting the surface temperature of a polishing pad is characterized by comprising: a pad contact member which is in contact with the surface of the polishing pad and has a heating flow path formed therein And a cooling flow path; the heating liquid supply pipe is connected to the heating flow path; the cooling liquid supply pipe is connected to the cooling flow path; and the first flow rate control valve is attached to the heating liquid supply pipe; a flow control valve installed in the coolant supply pipe; a pad temperature measuring device for measuring a surface temperature of the polishing pad; and a valve control portion for operating the first flow rate control according to a surface temperature of the polishing pad The valve and the aforementioned second flow control valve.
本發明適合樣態之特徵為:前述加熱流路及前述冷卻流路彼此鄰接延伸,且螺旋狀延伸。 The present invention is characterized in that the heating flow path and the cooling flow path are adjacent to each other and extend in a spiral shape.
本發明適合樣態之特徵為:前述加熱流路及前述冷卻流路沿著前述研磨墊之周方向排列。 The present invention is characterized in that the heating flow path and the cooling flow path are arranged along the circumferential direction of the polishing pad.
本發明適合樣態之特徵為:前述加熱流路及前述冷卻流路在前述研磨墊之半徑方向對稱。 The present invention is characterized in that the heating flow path and the cooling flow path are symmetrical in the radial direction of the polishing pad.
本發明適合樣態之特徵為:前述閥門控制部決定使目標溫度與前述研磨墊之表面溫度無差異所需的前述第一流量控制閥門及前述第二流量控制閥門的操作量。 The present invention is characterized in that the valve control unit determines an operation amount of the first flow rate control valve and the second flow rate control valve required to make the target temperature and the surface temperature of the polishing pad not different.
本發明適合樣態之特徵為:以0%至100%之數值表示前述第一流量控制閥門及前述第二流量控制閥門之各個操作量時,前述閥門控制部藉由從100%減去前述第一流量控制閥門及前述第二流量控制閥門中之一方操作量,來決定前述第一流量控制閥門及前述第二流量控制閥門中的另一方操作量。 The present invention is characterized in that, when the respective operation amounts of the first flow control valve and the second flow control valve are represented by numerical values of 0% to 100%, the valve control unit subtracts the foregoing from 100%. One of the flow control valve and the second flow control valve is used to determine the other of the first flow control valve and the second flow control valve.
本發明一種樣態係,用以調整研磨墊之表面溫度的方法其特徵為:使墊接觸構件接觸於前述研磨墊之表面,而且將加熱液及冷卻液分別同時流入形成於前述墊接觸構件內之加熱流路及冷卻流路,並依據前述研磨墊之表面溫度獨立控制加熱液及冷卻液的流量。 A method for adjusting the surface temperature of the polishing pad is characterized in that the pad contact member is in contact with the surface of the polishing pad, and the heating liquid and the cooling liquid are simultaneously flowed into the pad contact member. The heating flow path and the cooling flow path independently control the flow rates of the heating liquid and the cooling liquid according to the surface temperature of the polishing pad.
本發明適合樣態之特徵為:將加熱液之流量與冷卻液之流量的總和維持一定。 The feature of the present invention is characterized in that the sum of the flow rate of the heating liquid and the flow rate of the cooling liquid is maintained constant.
本發明適合樣態之特徵為:前述加熱流路及前述冷卻流路彼此鄰接延伸,且螺旋狀延伸。 The present invention is characterized in that the heating flow path and the cooling flow path are adjacent to each other and extend in a spiral shape.
採用本發明時,在墊接觸構件之加熱流路中僅流入加熱液,在冷卻流路中僅流入冷卻液。加熱液及冷卻液之各個流量依據研磨墊之表面溫度而控制。如此,無須切換溫水與冷水,藉由以各個專用供給管供給加熱液及冷卻液,且控制流量,可進行類比式的溫度控制。因此可將研磨墊之表面溫度穩定維持在目標溫度。 According to the present invention, only the heating liquid flows into the heating flow path of the pad contact member, and only the cooling liquid flows into the cooling flow path. The respective flows of the heating liquid and the cooling liquid are controlled in accordance with the surface temperature of the polishing pad. In this way, analogous temperature control can be performed by switching the warm water and the cold water without supplying the heating liquid and the cooling liquid to each dedicated supply pipe and controlling the flow rate. Therefore, the surface temperature of the polishing pad can be stably maintained at the target temperature.
1‧‧‧上方環形轉盤 1‧‧‧Upround turntable
2‧‧‧研磨台 2‧‧‧ polishing table
3‧‧‧研磨墊 3‧‧‧ polishing pad
4‧‧‧研磨液供給噴嘴 4‧‧‧ polishing liquid supply nozzle
5‧‧‧墊溫度調整裝置 5‧‧‧Material temperature adjustment device
11‧‧‧墊接觸構件 11‧‧‧mat contact members
30‧‧‧液體供給系統 30‧‧‧Liquid supply system
31‧‧‧加熱液供給槽 31‧‧‧heating liquid supply tank
32‧‧‧加熱液供給管 32‧‧‧heating liquid supply pipe
32A‧‧‧第一加熱液供給管 32A‧‧‧First heating liquid supply pipe
32B‧‧‧第二加熱液供給管 32B‧‧‧Second heating liquid supply pipe
33‧‧‧加熱液回流管 33‧‧‧heating liquid return pipe
33A‧‧‧第一加熱液回流管 33A‧‧‧First heating liquid return pipe
33B‧‧‧第二加熱液回流管 33B‧‧‧Second heating liquid return pipe
39‧‧‧墊溫度測定器 39‧‧‧Material temperature tester
40‧‧‧閥門控制部 40‧‧‧ Valve Control Department
41‧‧‧第一開閉閥門 41‧‧‧First opening and closing valve
42‧‧‧第一流量控制閥門 42‧‧‧First flow control valve
51‧‧‧冷卻液供給管 51‧‧‧ coolant supply pipe
52‧‧‧冷卻液排出管 52‧‧‧Cooling drain
55‧‧‧第二開閉閥門 55‧‧‧Second opening and closing valve
56‧‧‧第二流量控制閥門 56‧‧‧Second flow control valve
61‧‧‧加熱流路 61‧‧‧heating flow path
61a,62a‧‧‧入口 61a, 62a‧‧ Entrance
61b、62b‧‧‧出口 61b, 62b‧‧ Export
62‧‧‧冷卻流路 62‧‧‧Cooling flow path
64‧‧‧圓弧流路 64‧‧‧Circular flow path
65‧‧‧傾斜流路 65‧‧‧Sloping flow path
71‧‧‧滑動機構 71‧‧‧Sliding mechanism
81‧‧‧第一分歧管 81‧‧‧First branch tube
84‧‧‧第二分歧管 84‧‧‧Second manifold
90‧‧‧溫度檢測器 90‧‧‧ Temperature detector
103‧‧‧研磨墊 103‧‧‧ polishing pad
111‧‧‧墊接觸構件 111‧‧‧pad contact members
112‧‧‧流體供給管 112‧‧‧Fluid supply tube
115‧‧‧溫水供給管 115‧‧‧Warm water supply pipe
116‧‧‧冷水供給管 116‧‧‧Cold water supply pipe
120‧‧‧溫水閥門 120‧‧‧Warm water valve
121‧‧‧冷水閥門 121‧‧‧ cold water valve
R1、R2‧‧‧流量控制閥門 R1, R2‧‧‧ flow control valve
V1~V8‧‧‧開閉閥門 V1~V8‧‧‧Open and close valves
W‧‧‧晶圓 W‧‧‧ wafer
第一圖係顯示研磨裝置之模式圖。 The first figure shows a schematic view of the grinding device.
第二圖係顯示墊接觸構件之水平剖面圖。 The second figure shows a horizontal cross-sectional view of the pad contact member.
第三圖係顯示研磨墊上之墊接觸構件與上方環形轉盤的位置關係之俯視圖。 The third figure shows a top view of the positional relationship of the pad contact member on the polishing pad with the upper annular turntable.
第四圖係顯示第一流量控制閥門及第二流量控制閥門之操作量與流量的關係曲線圖。 The fourth figure shows the relationship between the operation amount and the flow rate of the first flow control valve and the second flow control valve.
第五圖係閥門控制部之動作的說明圖。 The fifth drawing is an explanatory diagram of the operation of the valve control unit.
第六圖係顯示墊表面溫度之變化與各閥門的狀態曲線圖。 The sixth graph shows the change in the surface temperature of the mat and the state of each valve.
第七圖係顯示墊接觸構件之其他實施形態的水平剖面圖。 Figure 7 is a horizontal cross-sectional view showing another embodiment of the pad contact member.
第八圖係顯示第七圖所示之墊接觸構件與上方環形轉盤的位置關係之俯視圖。 The eighth drawing shows a plan view showing the positional relationship between the pad contact member shown in the seventh figure and the upper ring carousel.
第九圖係顯示墊接觸構件之另一種實施形態的水平剖面圖。 The ninth drawing is a horizontal cross-sectional view showing another embodiment of the pad contact member.
第十圖係顯示第九圖所示之墊接觸構件與上方環形轉盤的位置關係之俯視圖。 Fig. 10 is a plan view showing the positional relationship between the pad contact member shown in Fig. 9 and the upper ring carousel.
第十一圖係顯示墊接觸構件之另一種實施形態的水平剖面圖。 The eleventh figure is a horizontal cross-sectional view showing another embodiment of the pad contact member.
第十二圖係顯示第十一圖所示之墊接觸構件與上方環形轉盤的位置關係之俯視圖。 Fig. 12 is a plan view showing the positional relationship between the pad contact member shown in Fig. 11 and the upper ring carousel.
第十三圖係顯示墊接觸構件之另一種實施形態的水平剖面圖。 Figure 13 is a horizontal cross-sectional view showing another embodiment of the pad contact member.
第十四圖係顯示第十三圖所示之墊接觸構件與上方環形轉盤的位置關係之俯視圖。 Fig. 14 is a plan view showing the positional relationship between the pad contact member shown in Fig. 13 and the upper ring carousel.
第十五圖係顯示使具有第二圖所示之渦卷狀加熱流路及冷卻流路的 墊接觸構件接觸於研磨墊時墊表面溫度之變化的實驗資料。 The fifteenth figure shows the scroll-shaped heating flow path and the cooling flow path shown in the second figure. Experimental data on changes in the surface temperature of the mat when the mat contact member is in contact with the polishing pad.
第十六圖係顯示使具有第十一圖所示半圓狀延伸之加熱流路及冷卻流路的墊接觸構件接觸於研磨墊時墊表面溫度之變化的實驗資料。 Fig. 16 is a view showing experimental data of changes in the surface temperature of the mat when the pad contact member having the semicircularly extending heating flow path and the cooling flow path shown in Fig. 11 is brought into contact with the polishing pad.
第十七圖係顯示使具有第十三圖所示之交錯狀加熱流路及冷卻流路的墊接觸構件接觸於研磨墊時墊表面溫度之變化的實驗資料。 Fig. 17 is a view showing experimental data of changes in the surface temperature of the mat when the pad contact member having the staggered heating flow path and the cooling flow path shown in Fig. 13 is brought into contact with the polishing pad.
第十八圖係顯示使具有第二圖所示之渦卷狀加熱流路及冷卻流路的墊接觸構件接觸於研磨墊時墊表面溫度之分布曲線圖。 Fig. 18 is a graph showing the distribution of the surface temperature of the mat when the pad contact member having the spiral heating flow path and the cooling flow path shown in Fig. 2 is brought into contact with the polishing pad.
第十九圖係顯示使具有第十一圖所示半圓狀延伸之加熱流路及冷卻流路的墊接觸構件接觸於研磨墊時墊表面溫度之分布曲線圖。 Fig. 19 is a graph showing the distribution of the surface temperature of the mat when the pad contact member having the semicircularly extending heating flow path and the cooling flow path shown in Fig. 11 is brought into contact with the polishing pad.
第二十圖係顯示使具有第十三圖所示之交錯狀加熱流路及冷卻流路的墊接觸構件接觸於研磨墊時墊表面溫度之分布曲線圖。 Fig. 20 is a graph showing the distribution of the surface temperature of the mat when the pad contact member having the staggered heating flow path and the cooling flow path shown in Fig. 13 is brought into contact with the polishing pad.
第二十一圖係使用墊溫度調整裝置研磨晶圓之一種實施形態的說明圖。 The twenty-first embodiment is an explanatory diagram of an embodiment of polishing a wafer using a pad temperature adjusting device.
第二十二圖係顯示墊溫度調整裝置之其他實施形態的圖。 Fig. 22 is a view showing another embodiment of the pad temperature adjusting device.
第二十三圖係顯示墊溫度調整裝置之另一種實施形態的圖。 The twenty-third figure is a view showing another embodiment of the pad temperature adjusting device.
第二十四圖係顯示墊溫度調整裝置之另一種實施形態的圖。 The twenty-fourth embodiment is a view showing another embodiment of the pad temperature adjusting device.
第二十五圖係顯示過去之墊溫度調整裝置的模式圖。 The twenty-fifth diagram shows a schematic diagram of the past pad temperature adjustment device.
第二十六圖係顯示溫水閥門及冷水閥門之動作與研磨墊之表面溫度的變化圖。 The twenty-sixth figure shows the change of the surface temperature of the action of the warm water valve and the cold water valve and the polishing pad.
第二十七圖係顯示研磨墊之目標溫度設定為60℃時,研磨墊之表面溫度的變化曲線圖。 The twenty-seventh figure shows a graph showing the change in the surface temperature of the polishing pad when the target temperature of the polishing pad is set to 60 °C.
第二十八圖係顯示調整PID控制之參數後研磨墊之表面溫度的變化曲 線圖。 The twenty-eighth figure shows the change of the surface temperature of the polishing pad after adjusting the parameters of the PID control. line graph.
第二十九圖係顯示調整PID控制之參數後,將目標溫度從60℃變更為50℃時研磨墊之表面溫度的變化曲線圖。 The twenty-ninth figure shows a graph showing changes in the surface temperature of the polishing pad when the target temperature is changed from 60 ° C to 50 ° C after adjusting the parameters of the PID control.
以下,參照圖式說明本發明之實施形態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第一圖係顯示研磨裝置之模式圖。如第一圖所示,研磨裝置具備:保持基板之一例的晶圓W而使其旋轉之上方環形轉盤1;支撐研磨墊3之研磨台2;在研磨墊3表面供給研磨液(例如漿液)之研磨液供給噴嘴4;及調整研磨墊3之表面溫度的墊溫度調整裝置5。研磨墊3之表面(上面)構成研磨晶圓W的研磨面。 The first figure shows a schematic view of the grinding device. As shown in the first figure, the polishing apparatus includes an upper ring-shaped turntable 1 that holds a wafer W as an example of a substrate and rotates thereon, a polishing table 2 that supports the polishing pad 3, and a polishing liquid (for example, a slurry) on the surface of the polishing pad 3. The polishing liquid supply nozzle 4; and the pad temperature adjusting device 5 for adjusting the surface temperature of the polishing pad 3. The surface (upper surface) of the polishing pad 3 constitutes a polishing surface on which the wafer W is polished.
上方環形轉盤1可在鉛直方向移動,且可以其軸心為中心在箭頭指示的方向旋轉。晶圓W藉由真空吸附等而保持在上方環形轉盤1之下面。研磨台2連結有馬達(無圖示),可在箭頭指示之方向旋轉。如第一圖所示,上方環形轉盤1及研磨台2在相同方向旋轉。研磨墊3貼合於研磨台2之上面。 The upper ring carousel 1 is movable in the vertical direction and can be rotated in the direction indicated by the arrow centering on its axis. The wafer W is held under the upper ring carousel 1 by vacuum suction or the like. A motor (not shown) is coupled to the polishing table 2, and is rotatable in the direction indicated by the arrow. As shown in the first figure, the upper ring carousel 1 and the polishing table 2 are rotated in the same direction. The polishing pad 3 is attached to the upper surface of the polishing table 2.
晶圓W之研磨進行如下。研磨之晶圓W藉由上方環形轉盤1保持,進一步藉由上方環形轉盤1旋轉。另外,研磨墊3與研磨台2一起旋轉。在該狀態下,從研磨液供給噴嘴4供給研磨液至研磨墊3表面,再者,晶圓W之表面藉由上方環形轉盤1對研磨墊3的表面(亦即研磨面)按壓。晶圓W表面在研磨液存在下藉由與研磨墊3滑動接觸而被研磨。晶圓W表面藉由研磨液之化學性作用與研磨液中包含之研磨粒的機械性作用而平坦化。 The polishing of the wafer W is performed as follows. The ground wafer W is held by the upper annular turntable 1 and further rotated by the upper annular turntable 1. Further, the polishing pad 3 rotates together with the polishing table 2. In this state, the polishing liquid is supplied from the polishing liquid supply nozzle 4 to the surface of the polishing pad 3, and the surface of the wafer W is pressed against the surface (i.e., the polishing surface) of the polishing pad 3 by the upper ring-shaped turntable 1. The surface of the wafer W is ground by sliding contact with the polishing pad 3 in the presence of a polishing liquid. The surface of the wafer W is planarized by the mechanical action of the polishing liquid and the mechanical action of the abrasive grains contained in the polishing liquid.
墊溫度調整裝置5具備:可接觸於研磨墊3表面之墊接觸構件 11;及將溫度調整後之加熱液及冷卻液供給至墊接觸構件11的液體供給系統30。該液體供給系統30具備:貯存溫度調整後之加熱液的作為加熱液供給源之加熱液供給槽31;以及連結加熱液供給槽31與墊接觸構件11之加熱液供給管32及加熱液回流管33。加熱液供給管32及加熱液回流管33之一方端部連接於加熱液供給槽31,另一方端部連接於墊接觸構件11。 The pad temperature adjusting device 5 is provided with a pad contact member that can contact the surface of the polishing pad 3 11; and the temperature-adjusted heating liquid and the cooling liquid are supplied to the liquid supply system 30 of the pad contact member 11. The liquid supply system 30 includes a heating liquid supply tank 31 as a heating liquid supply source for the heating liquid after the storage temperature adjustment, and a heating liquid supply pipe 32 and a heating liquid return pipe that connect the heating liquid supply tank 31 and the pad contact member 11. 33. One end of the heating liquid supply pipe 32 and the heating liquid return pipe 33 is connected to the heating liquid supply tank 31, and the other end is connected to the pad contact member 11.
溫度調整後之加熱液從加熱液供給槽31通過加熱液供給管32而供給至墊接觸構件11,並在墊接觸構件11中流動,而後,從墊接觸構件11通過加熱液回流管33返回加熱液供給槽31。如此,加熱液在加熱液供給槽31與墊接觸構件11之間循環。加熱液供給槽31具有加熱器(無圖示),加熱液藉由加熱器加熱至指定溫度。 The temperature-adjusted heating liquid is supplied from the heating liquid supply tank 31 to the pad contact member 11 through the heating liquid supply pipe 32, flows in the pad contact member 11, and then returns to the heating from the pad contact member 11 through the heating liquid return pipe 33. Liquid supply tank 31. In this manner, the heating liquid circulates between the heating liquid supply tank 31 and the pad contact member 11. The heating liquid supply tank 31 has a heater (not shown), and the heating liquid is heated to a predetermined temperature by the heater.
加熱液供給管32中安裝有第一開閉閥門41及第一流量控制閥門42。第一流量控制閥門42配置於墊接觸構件11與第一開閉閥門41之間。第一開閉閥門41係並無流量調整功能之閥門,而第一流量控制閥門42係具有流量調整功能之閥門。 A first opening and closing valve 41 and a first flow rate control valve 42 are attached to the heating liquid supply pipe 32. The first flow control valve 42 is disposed between the pad contact member 11 and the first opening and closing valve 41. The first opening and closing valve 41 is a valve having no flow adjustment function, and the first flow control valve 42 is a valve having a flow adjustment function.
液體供給系統30進一步具備連接於墊接觸構件11之冷卻液供給管51及冷卻液排出管52。冷卻液供給管51連接於設置研磨裝置之工廠中設置的冷卻液供給源(例如冷水供給源)。冷卻液通過冷卻液供給管51供給至墊接觸構件11,並在墊接觸構件11中流動,而後,從墊接觸構件11通過冷卻液排出管52排出。一種實施形態亦可將在墊接觸構件11中流動之冷卻液通過冷卻液排出管52而返回冷卻液供給源。 The liquid supply system 30 further includes a coolant supply pipe 51 and a coolant discharge pipe 52 that are connected to the pad contact member 11. The coolant supply pipe 51 is connected to a coolant supply source (for example, a cold water supply source) provided in a factory in which the polishing device is installed. The coolant is supplied to the pad contact member 11 through the coolant supply pipe 51, flows in the pad contact member 11, and then discharged from the pad contact member 11 through the coolant discharge pipe 52. In one embodiment, the coolant flowing through the pad contact member 11 may be returned to the coolant supply source through the coolant discharge pipe 52.
冷卻液供給管51中安裝有第二開閉閥門55及第二流量控制閥門56。第二流量控制閥門56配置於墊接觸構件11與第二開閉閥門55之 間。第二開閉閥門55係不具流量調整功能之閥門,而第二流量控制閥門56係具有流量調整功能之閥門。 A second opening and closing valve 55 and a second flow rate control valve 56 are attached to the coolant supply pipe 51. The second flow control valve 56 is disposed on the pad contact member 11 and the second opening and closing valve 55 between. The second opening and closing valve 55 is a valve having no flow adjustment function, and the second flow control valve 56 is a valve having a flow adjustment function.
墊溫度調整裝置5進一步具備:測定研磨墊3之表面溫度(以下稱為墊表面溫度)的墊溫度測定器39;及依據藉由墊溫度測定器39所測定之墊表面溫度操作第一流量控制閥門42及第二流量控制閥門56的閥門控制部40。第一開閉閥門41及第二開閉閥門55通常打開。墊溫度測定器39可使用可以不接觸而測定研磨墊3之表面溫度的放射溫度計。 The pad temperature adjusting device 5 further includes a pad temperature measuring device 39 that measures the surface temperature of the polishing pad 3 (hereinafter referred to as a pad surface temperature); and operates the first flow rate control based on the pad surface temperature measured by the pad temperature measuring device 39. The valve 42 and the valve control unit 40 of the second flow control valve 56. The first opening and closing valve 41 and the second opening and closing valve 55 are normally opened. The pad temperature measuring device 39 can use a radiation thermometer that can measure the surface temperature of the polishing pad 3 without contact.
墊溫度測定器39不接觸地測定研磨墊3之表面溫度,並將其測定值送交閥門控制部40。閥門控制部40以墊表面溫度維持在預設之目標溫度的方式,依據所測定之墊表面溫度操作第一流量控制閥門42及第二流量控制閥門56,來控制加熱液及冷卻液的流量。第一流量控制閥門42及第二流量控制閥門56按照來自閥門控制部40之控制信號而動作,並調整供給至墊接觸構件11之加熱液流量及冷卻液流量。在墊接觸構件11中流動之加熱液及冷卻液與研磨墊3之間進行熱交換,藉此墊表面溫度變化。 The pad temperature measuring device 39 measures the surface temperature of the polishing pad 3 without contact, and sends the measured value to the valve control unit 40. The valve control unit 40 controls the flow rates of the heating liquid and the cooling liquid by operating the first flow rate control valve 42 and the second flow rate control valve 56 in accordance with the measured pad surface temperature so that the pad surface temperature is maintained at the preset target temperature. The first flow rate control valve 42 and the second flow rate control valve 56 operate in accordance with a control signal from the valve control unit 40, and adjust the flow rate of the heating liquid and the flow rate of the coolant supplied to the pad contact member 11. The heating liquid flowing between the pad contact member 11 and the cooling liquid exchange heat with the polishing pad 3, whereby the pad surface temperature changes.
藉由此種反饋控制,研磨墊3之表面溫度(墊表面溫度)維持在指定的目標溫度。閥門控制部40可使用PID控制器。研磨墊3之目標溫度依晶圓W種類或研磨程序而決定,決定後之目標溫度預先輸入閥門控制部40。 With this feedback control, the surface temperature (pad surface temperature) of the polishing pad 3 is maintained at a specified target temperature. The valve control unit 40 can use a PID controller. The target temperature of the polishing pad 3 is determined according to the type of wafer W or the polishing procedure, and the target temperature after the determination is input to the valve control unit 40 in advance.
為了將墊表面溫度維持在指定的目標溫度,在晶圓W研磨中,墊接觸構件11接觸於研磨墊3之表面(亦即研磨面)。本說明書中,墊接觸構件11接觸於研磨墊3表面之樣態,除了墊接觸構件11直接接觸於研磨墊3表面的樣態之外,亦包含在墊接觸構件11與研磨墊3表面之間存在研磨 液(漿液)狀態下,墊接觸構件11接觸於研磨墊3之表面的樣態。任何一種樣態皆係在墊接觸構件11中流動之加熱液及冷卻液與研磨墊3之間進行熱交換,藉此控制墊表面溫度。 In order to maintain the pad surface temperature at a specified target temperature, the pad contact member 11 is in contact with the surface (i.e., the polishing surface) of the polishing pad 3 during wafer W polishing. In the present specification, the pad contact member 11 is in contact with the surface of the polishing pad 3, and is included between the pad contact member 11 and the surface of the polishing pad 3, except that the pad contact member 11 directly contacts the surface of the polishing pad 3. Grinding In the liquid (slurry) state, the pad contact member 11 is in contact with the surface of the polishing pad 3. Any of the states is to exchange heat between the heating liquid flowing in the pad contact member 11 and the cooling liquid and the polishing pad 3, thereby controlling the surface temperature of the pad.
供給至墊接觸構件11之加熱液係使用溫水。溫水藉由加熱液供給槽31之加熱器例如約加熱至80℃。欲使研磨墊3之表面溫度迅速上昇情況下,亦可使用矽油作為加熱液。使用矽油作為加熱液情況下,矽油藉由加熱液供給槽31之加熱器加熱至100℃以上(例如,約120℃)。供給至墊接觸構件11之冷卻液使用冷水或矽油。使用矽油作為冷卻液情況下,作為冷卻液供給源係將冷卻器連接於冷卻液供給管51,藉由使矽油冷卻至0℃以下,即可迅速冷卻研磨墊3。冷水可使用純水。為了冷卻純水而生成冷水,亦可使用冷卻器作為冷卻液供給源。此時亦可將在墊接觸構件11中流動之冷水通過冷卻液排出管52返回冷卻器。 The heating liquid supplied to the pad contact member 11 uses warm water. The warm water is heated to 80 ° C by, for example, a heater of the heating liquid supply tank 31. In order to cause the surface temperature of the polishing pad 3 to rise rapidly, eucalyptus oil can also be used as the heating liquid. In the case where eucalyptus oil is used as the heating liquid, the eucalyptus oil is heated to 100 ° C or higher (for example, about 120 ° C) by the heater of the heating liquid supply tank 31. The coolant supplied to the pad contact member 11 uses cold water or eucalyptus oil. When eucalyptus oil is used as the cooling liquid, the cooler is connected to the coolant supply pipe 51 as a coolant supply source, and the polishing pad 3 can be rapidly cooled by cooling the eucalyptus oil to 0 ° C or lower. Pure water can be used for cold water. In order to cool the pure water to generate cold water, a cooler may be used as the coolant supply source. At this time, the cold water flowing in the pad contact member 11 can also be returned to the cooler through the coolant discharge pipe 52.
加熱液供給管32及冷卻液供給管51係完全獨立之配管。因此,加熱液及冷卻液不致混合,而同時供給至墊接觸構件11。加熱液回流管33及冷卻液排出管52亦係完全獨立之配管。因此,加熱液不致與冷卻液混合而返回加熱液供給槽31,冷卻液不致與加熱液混合而排出,或是返回冷卻液供給源。 The heating liquid supply pipe 32 and the coolant supply pipe 51 are completely independent pipes. Therefore, the heating liquid and the cooling liquid are not mixed while being supplied to the pad contact member 11. The heating liquid return pipe 33 and the coolant discharge pipe 52 are also completely independent pipes. Therefore, the heating liquid is not mixed with the cooling liquid and returned to the heating liquid supply tank 31, and the cooling liquid is not discharged by mixing with the heating liquid, or is returned to the cooling liquid supply source.
其次,參照第二圖說明墊接觸構件11。第二圖係顯示墊接觸構件11之水平剖面圖。如第二圖所示,墊接觸構件11具有形成於其內部之加熱流路61及冷卻流路62。加熱流路61及冷卻流路62彼此鄰接(彼此並排)延伸,且螺旋狀延伸。本實施形態之加熱流路61亦可比冷卻流路62短。 Next, the pad contact member 11 will be described with reference to the second figure. The second figure shows a horizontal sectional view of the pad contact member 11. As shown in the second figure, the pad contact member 11 has a heating flow path 61 and a cooling flow path 62 formed therein. The heating flow path 61 and the cooling flow path 62 are adjacent to each other (side by side) and extend in a spiral shape. The heating flow path 61 of the present embodiment may be shorter than the cooling flow path 62.
加熱液供給管32連接於加熱流路61之入口61a,加熱液回流 管33連接於加熱流路61之出口61b。冷卻液供給管51連接於冷卻流路62之入口62a,冷卻液排出管52連接於冷卻流路62之出口62b。加熱流路61及冷卻流路62之入口61a、62a位於墊接觸構件11之周緣部,加熱流路61及冷卻流路62之出口61b、62b位於墊接觸構件11的中心部。因此,加熱液及冷卻液係從墊接觸構件11之周緣部朝向中心部螺旋狀流動。加熱流路61及冷卻流路62完全分離,因此加熱液及冷卻液不致在墊接觸構件11內混合。 The heating liquid supply pipe 32 is connected to the inlet 61a of the heating flow path 61, and the heating liquid is recirculated. The tube 33 is connected to the outlet 61b of the heating flow path 61. The coolant supply pipe 51 is connected to the inlet 62a of the cooling flow path 62, and the coolant discharge pipe 52 is connected to the outlet 62b of the cooling flow path 62. The inlets 61a and 62a of the heating channel 61 and the cooling channel 62 are located at the peripheral edge of the pad contact member 11, and the outlets 61b and 62b of the heating channel 61 and the cooling channel 62 are located at the center of the pad contact member 11. Therefore, the heating liquid and the cooling liquid spirally flow from the peripheral edge portion of the pad contact member 11 toward the center portion. Since the heating flow path 61 and the cooling flow path 62 are completely separated, the heating liquid and the cooling liquid are not mixed in the pad contact member 11.
第三圖係顯示研磨墊3上之墊接觸構件11與上方環形轉盤1的位置關係之俯視圖。墊接觸構件11從上方觀看時係圓形,且墊接觸構件11之直徑比上方環形轉盤1的直徑小。從研磨墊3之旋轉中心至墊接觸構件11的中心之距離,與從研磨墊3之旋轉中心至上方環形轉盤1中心的距離相同。由於加熱流路61及冷卻流路62彼此鄰接,因此加熱流路61及冷卻流路62除了在研磨墊3的徑方向之外,亦沿著研磨墊3之周方向排列。因此,在研磨台2及研磨墊3旋轉中,接觸於墊接觸構件11之研磨墊3與加熱液及冷卻液兩者進行熱交換。 The third figure shows a plan view showing the positional relationship between the pad contact member 11 on the polishing pad 3 and the upper ring carousel 1. The pad contact member 11 is circular when viewed from above, and the diameter of the pad contact member 11 is smaller than the diameter of the upper ring carousel 1. The distance from the center of rotation of the polishing pad 3 to the center of the pad contact member 11 is the same as the distance from the center of rotation of the polishing pad 3 to the center of the upper ring carousel 1. Since the heating flow path 61 and the cooling flow path 62 are adjacent to each other, the heating flow path 61 and the cooling flow path 62 are arranged along the circumferential direction of the polishing pad 3 in addition to the radial direction of the polishing pad 3. Therefore, during the rotation of the polishing table 2 and the polishing pad 3, the polishing pad 3 contacting the pad contact member 11 exchanges heat with both the heating liquid and the cooling liquid.
閥門控制部40係以為了使預設之目標溫度與測定後的研磨墊3表面溫度無差異,而決定所需之第一流量控制閥門42的操作量及第二流量控制閥門56的操作量之方式構成。第一流量控制閥門42之操作量及第二流量控制閥門56的操作量換言之即是閥門開度。第一流量控制閥門42之操作量與加熱液的流量成比例,第二流量控制閥門56之操作量與冷卻液的流量成比例。並宜如第四圖所示,第一流量控制閥門42之操作量與加熱液的流量成正比,第二流量控制閥門56之操作量與冷卻液的流量成正比。 The valve control unit 40 determines the required operation amount of the first flow rate control valve 42 and the operation amount of the second flow rate control valve 56 in order to make the preset target temperature and the measured surface temperature of the polishing pad 3 not different. Way composition. The operation amount of the first flow rate control valve 42 and the operation amount of the second flow rate control valve 56 are, in other words, the valve opening degree. The amount of operation of the first flow control valve 42 is proportional to the flow rate of the heated liquid, and the amount of operation of the second flow control valve 56 is proportional to the flow rate of the coolant. As shown in the fourth figure, the operation amount of the first flow control valve 42 is proportional to the flow rate of the heating liquid, and the operation amount of the second flow control valve 56 is proportional to the flow rate of the coolant.
第五圖係閥門控制部40之動作的說明圖。以0%至100%之數 值表示第一流量控制閥門42及第二流量控制閥門56之各個操作量時,係以閥門控制部40藉由從100%減去第一流量控制閥門42之操作量,來決定第二流量控制閥門56之操作量的方式構成。一種實施形態亦可藉由從100%減去第二流量控制閥門56之操作量來決定第一流量控制閥門42的操作量。 The fifth diagram is an explanatory diagram of the operation of the valve control unit 40. From 0% to 100% When the values indicate the respective operation amounts of the first flow rate control valve 42 and the second flow rate control valve 56, the valve control unit 40 determines the second flow rate control by subtracting the operation amount of the first flow rate control valve 42 from 100%. The operation of the valve 56 is constructed in such a manner. In one embodiment, the amount of operation of the first flow control valve 42 can also be determined by subtracting the amount of operation of the second flow control valve 56 from 100%.
第一流量控制閥門42之操作量係100%時表示第一流量控制閥門42全開,第一流量控制閥門42之操作量係0%時表示將第一流量控制閥門42完全關閉。同樣地,第二流量控制閥門56之操作量係100%時表示第二流量控制閥門56全開,第二流量控制閥門56之操作量係0%時表示將第二流量控制閥門56完全關閉。 When the operation amount of the first flow control valve 42 is 100%, the first flow control valve 42 is fully opened, and when the operation amount of the first flow control valve 42 is 0%, the first flow control valve 42 is completely closed. Similarly, the operation of the second flow control valve 56 is 100% indicating that the second flow control valve 56 is fully open, and the operation of the second flow control valve 56 is 0% indicating that the second flow control valve 56 is fully closed.
第一流量控制閥門42之操作量係100%時的加熱液流量,與第二流量控制閥門56之操作量係100%時的冷卻液流量相同。因此,通過第一流量控制閥門42之加熱液流量與通過第二流量控制閥門56之冷卻液流量的合計隨時保持一定。 The flow rate of the heating liquid when the operation amount of the first flow rate control valve 42 is 100% is the same as the flow rate of the coolant when the operation amount of the second flow rate control valve 56 is 100%. Therefore, the total of the flow rate of the heating liquid passing through the first flow rate control valve 42 and the flow rate of the coolant passing through the second flow rate control valve 56 is kept constant at any time.
第六圖係顯示墊表面溫度之變化與各閥門的狀態曲線圖。如第六圖所示,係操作第一流量控制閥門42及第二流量控制閥門56使第一流量控制閥門42之操作量與第二流量控制閥門56的操作量之總和為100%。如此,由於將加熱亦流量與冷卻液流量的總和保持一定,因此可防止墊表面溫度變動。 The sixth graph shows the change in the surface temperature of the mat and the state of each valve. As shown in the sixth figure, the first flow control valve 42 and the second flow control valve 56 are operated such that the sum of the operation amount of the first flow control valve 42 and the operation amount of the second flow control valve 56 is 100%. In this way, since the sum of the flow rate of the heating and the flow rate of the coolant is kept constant, the temperature of the surface of the mat can be prevented from fluctuating.
採用本實施形態時,墊接觸構件11之加熱流路61中僅流入加熱液,冷卻流路62中僅流入冷卻液。加熱液及冷卻液之各個流量依據研磨墊3之表面溫度來控制。換言之,第一流量控制閥門42及第二流量控制閥門56係依據研磨墊3之表面溫度與目標溫度之差而動作。因此,可將研磨墊3 之表面溫度穩定維持在目標溫度。 According to the present embodiment, only the heating liquid flows into the heating flow path 61 of the pad contact member 11, and only the cooling liquid flows into the cooling flow path 62. The respective flows of the heating liquid and the cooling liquid are controlled in accordance with the surface temperature of the polishing pad 3. In other words, the first flow rate control valve 42 and the second flow rate control valve 56 operate in accordance with the difference between the surface temperature of the polishing pad 3 and the target temperature. Therefore, the polishing pad 3 can be The surface temperature is stably maintained at the target temperature.
第七圖係顯示墊接觸構件11之其他實施形態的水平剖面圖,第八圖係顯示第七圖所示之墊接觸構件11與上方環形轉盤1的位置關係俯視圖。與第二圖所示之實施形態相同,加熱流路61及冷卻流路62彼此鄰接(彼此並排)延伸,且螺旋狀延伸。再者,加熱流路61及冷卻流路62具有點對稱之形狀,且彼此具有相同長度。 7 is a horizontal cross-sectional view showing another embodiment of the pad contact member 11, and the eighth view is a plan view showing the positional relationship between the pad contact member 11 and the upper ring carousel 1 shown in FIG. As in the embodiment shown in Fig. 2, the heating flow path 61 and the cooling flow path 62 are adjacent to each other (side by side) and extend in a spiral shape. Further, the heating flow path 61 and the cooling flow path 62 have a point symmetrical shape and have the same length.
第九圖係顯示墊接觸構件11之另一種實施形態的水平剖面圖,第十圖係顯示第九圖所示之墊接觸構件11與上方環形轉盤1的位置關係俯視圖。與第二圖所示之實施形態相同,加熱流路61及冷卻流路62彼此鄰接(彼此並排)延伸,且螺旋狀延伸。再者,加熱流路61及冷卻流路62具有點對稱之形狀,且彼此具有相同長度。 The ninth drawing is a horizontal sectional view showing another embodiment of the pad contact member 11, and the tenth drawing is a plan view showing the positional relationship between the pad contact member 11 and the upper ring carousel 1 shown in the ninth drawing. As in the embodiment shown in Fig. 2, the heating flow path 61 and the cooling flow path 62 are adjacent to each other (side by side) and extend in a spiral shape. Further, the heating flow path 61 and the cooling flow path 62 have a point symmetrical shape and have the same length.
如第九圖所示,加熱流路61及冷卻流路62基本上分別由曲率一定之複數條圓弧流路64;及連結此等圓弧流路64之複數條傾斜流路65而構成。鄰接之2條圓弧流路64藉由各傾斜流路65連結。藉由採用此種構成,可將加熱流路61及冷卻流路62之各個最外周部配置於墊接觸構件11的最外周部。換言之,從墊接觸構件11下面構成之墊接觸面的大致全體位於加熱流路61及冷卻流路62的下方,加熱液及冷卻液可將研磨墊3表面迅速加熱及冷卻。 As shown in the ninth diagram, the heating flow path 61 and the cooling flow path 62 are basically constituted by a plurality of circular arc flow paths 64 having a constant curvature, and a plurality of inclined flow paths 65 connecting the circular arc flow paths 64. The two adjacent circular arc flow paths 64 are connected by the respective inclined flow paths 65. By adopting such a configuration, each of the outermost peripheral portions of the heating flow path 61 and the cooling flow path 62 can be disposed at the outermost peripheral portion of the pad contact member 11. In other words, substantially all of the pad contact surface formed from the lower surface of the pad contact member 11 is located below the heating flow path 61 and the cooling flow path 62, and the heating liquid and the cooling liquid can rapidly heat and cool the surface of the polishing pad 3.
第十一圖係顯示墊接觸構件11之另一種實施形態的水平剖面圖,第十二圖係顯示第十一圖所示之墊接觸構件11與上方環形轉盤1的位置關係俯視圖。加熱流路61及冷卻流路62由分別配置於半圓區域內而進入的流路構成。加熱流路61及冷卻流路62以研磨墊3之半徑方向為中心而對 稱。加熱流路61及冷卻流路62沿著研磨墊3之周方向而排列。因此,研磨台2旋轉時,配置加熱流路61及冷卻流路62之2個半圓區域接觸於研磨墊3表面內的相同區域。 The eleventh figure is a horizontal sectional view showing another embodiment of the pad contact member 11, and the twelfth view is a plan view showing the positional relationship between the pad contact member 11 and the upper ring carousel 1 shown in the eleventh figure. The heating flow path 61 and the cooling flow path 62 are constituted by flow paths that are respectively disposed in the semicircular region and enter. The heating flow path 61 and the cooling flow path 62 are centered on the radial direction of the polishing pad 3 Said. The heating flow path 61 and the cooling flow path 62 are arranged along the circumferential direction of the polishing pad 3. Therefore, when the polishing table 2 rotates, the two semicircular regions in which the heating flow path 61 and the cooling flow path 62 are disposed are in contact with the same region in the surface of the polishing pad 3.
第十三圖係顯示墊接觸構件11之另一種實施形態的水平剖面圖,第十四圖係顯示第十三圖所示之墊接觸構件11與上方環形轉盤1的位置關係剖面圖。加熱流路61及冷卻流路62彼此鄰接(彼此並排)延伸,且交錯地延伸。再者,加熱流路61及冷卻流路62具有點對稱之形狀,且彼此具有相同長度。本實施形態亦沿著研磨墊3之周方向排列加熱流路61及冷卻流路62。 Fig. 13 is a horizontal sectional view showing another embodiment of the pad contact member 11, and Fig. 14 is a sectional view showing the positional relationship between the pad contact member 11 and the upper ring carousel 1 shown in Fig. 13. The heating flow path 61 and the cooling flow path 62 are adjacent to each other (side by side) and extend in a staggered manner. Further, the heating flow path 61 and the cooling flow path 62 have a point symmetrical shape and have the same length. In the present embodiment, the heating flow path 61 and the cooling flow path 62 are also arranged along the circumferential direction of the polishing pad 3.
第十五圖係顯示使具有第二圖所示之渦卷狀加熱流路61及冷卻流路62的墊接觸構件11接觸於研磨墊3時之墊表面溫度變化的實驗資料。該實驗係以使第一流量控制閥門42之操作量與第二流量控制閥門56的操作量之總和成為100%之方式,操作第一流量控制閥門42及第二流量控制閥門56。目標溫度係40℃、50℃、60℃。從第十五圖瞭解,研磨墊3之表面溫度並未隨之大幅變動,而係維持在各目標溫度。 The fifteenth diagram shows experimental data of the temperature change of the pad surface when the pad contact member 11 having the spiral heating flow path 61 and the cooling flow path 62 shown in the second figure is brought into contact with the polishing pad 3. This experiment operates the first flow rate control valve 42 and the second flow rate control valve 56 such that the sum of the operation amount of the first flow rate control valve 42 and the operation amount of the second flow rate control valve 56 becomes 100%. The target temperature is 40 ° C, 50 ° C, 60 ° C. It is understood from the fifteenth figure that the surface temperature of the polishing pad 3 does not largely change, but is maintained at each target temperature.
第十六圖係顯示使具有第十一圖所示半圓狀延伸之加熱流路61及冷卻流路62的墊接觸構件11接觸於研磨墊3時之墊表面溫度變化的實驗資料。該實驗係以使第一流量控制閥門42之操作量與第二流量控制閥門56的操作量之總和成為100%之方式,操作第一流量控制閥門42及第二流量控制閥門56。目標溫度係40℃、50℃、60℃。從第十六圖瞭解,研磨墊3之表面溫度並未隨之大幅變動,而係維持在各目標溫度。 Fig. 16 is a view showing experimental data of a change in the surface temperature of the mat when the pad contact member 11 having the semicircularly extending heating flow path 61 and the cooling flow path 62 shown in Fig. 11 is brought into contact with the polishing pad 3. This experiment operates the first flow rate control valve 42 and the second flow rate control valve 56 such that the sum of the operation amount of the first flow rate control valve 42 and the operation amount of the second flow rate control valve 56 becomes 100%. The target temperature is 40 ° C, 50 ° C, 60 ° C. It is understood from the sixteenth figure that the surface temperature of the polishing pad 3 does not largely change, but is maintained at each target temperature.
第十七圖係顯示使具有第十三圖所示之交錯狀加熱流路61 及冷卻流路62的墊接觸構件11接觸於研磨墊3時之墊表面溫度變化的實驗資料。該實驗係以使第一流量控制閥門42之操作量與第二流量控制閥門56的操作量之總和成為100%之方式,操作第一流量控制閥門42及第二流量控制閥門56。目標溫度係40℃、50℃、60℃。從第十七圖瞭解,研磨墊3之表面溫度並未隨之大幅變動,而係維持在各目標溫度。 Fig. 17 is a view showing the staggered heating flow path 61 shown in Fig. Experimental data of the change in the surface temperature of the pad when the pad contact member 11 of the cooling flow path 62 is in contact with the polishing pad 3. This experiment operates the first flow rate control valve 42 and the second flow rate control valve 56 such that the sum of the operation amount of the first flow rate control valve 42 and the operation amount of the second flow rate control valve 56 becomes 100%. The target temperature is 40 ° C, 50 ° C, 60 ° C. It is understood from the seventeenth figure that the surface temperature of the polishing pad 3 does not largely change, but is maintained at each target temperature.
其次,說明就墊表面溫度之均勻性調查的實驗結果。第十八圖係顯示使具有第二圖所示之渦卷狀加熱流路61及冷卻流路62的墊接觸構件11接觸於研磨墊3時之墊表面溫度的分布曲線圖。第十九圖係顯示使具有第十一圖所示半圓狀延伸之加熱流路61及冷卻流路62的墊接觸構件11接觸於研磨墊3時墊表面溫度之分布曲線圖。第二十圖係顯示使具有第十三圖所示之交錯狀加熱流路61及冷卻流路62的墊接觸構件11接觸於研磨墊3時墊表面溫度之分布曲線圖。第十八圖至第二十圖中,墊表面溫度之分布表示研磨墊3的半徑方向分布。 Next, the experimental results of the investigation of the uniformity of the surface temperature of the mat will be described. Fig. 18 is a graph showing the distribution of the surface temperature of the mat when the pad contact member 11 having the spiral heating flow path 61 and the cooling flow path 62 shown in Fig. 2 is brought into contact with the polishing pad 3. Fig. 19 is a graph showing the distribution of the surface temperature of the mat when the pad contact member 11 having the semicircularly extending heating flow path 61 and the cooling flow path 62 shown in Fig. 11 is brought into contact with the polishing pad 3. Fig. 20 is a graph showing the distribution of the surface temperature of the mat when the pad contact member 11 having the staggered heating flow path 61 and the cooling flow path 62 shown in Fig. 13 is brought into contact with the polishing pad 3. In the eighteenth to twentieth drawings, the distribution of the surface temperature of the mat indicates the radial direction distribution of the polishing pad 3.
第十八圖至第二十圖所示之實驗全部在相同條件下實施。研磨墊3表面之目標溫度係55℃。從研磨台2之中心至墊接觸構件11中心的距離,與從研磨台2之中心至上方環形轉盤1中心的距離相同。從第十八圖至第二十圖所示的實驗瞭解,關於墊表面溫度之均勻性,具有半圓狀延伸之加熱流路61及冷卻流路62的墊接觸構件11,比具有捲繞狀之加熱流路61及冷卻流路62的墊接觸構件11佳,且具有捲繞狀之加熱流路61及冷卻流路62的墊接觸構件11,比具有交錯狀之加熱流路61及冷卻流路62的墊接觸構件11佳。 The experiments shown in Figs. 18 to 20 are all carried out under the same conditions. The target temperature of the surface of the polishing pad 3 was 55 °C. The distance from the center of the polishing table 2 to the center of the pad contact member 11 is the same as the distance from the center of the polishing table 2 to the center of the upper ring carousel 1. From the experiments shown in Figs. 18 to 20, it is understood that with respect to the uniformity of the surface temperature of the mat, the pad contact member 11 having the semicircularly extending heating flow path 61 and the cooling flow path 62 has a winding shape. The pad contact member 11 of the heating flow path 61 and the cooling flow path 62 is preferable, and the pad-shaped contact member 11 having the winding heating path 61 and the cooling flow path 62 has a staggered heating flow path 61 and a cooling flow path. The pad contact member 11 of 62 is preferred.
其次,參照第二十一圖說明使用墊溫度調整裝置5研磨晶圓 W之一種實施形態。以下說明之實施形態在晶圓W研磨中,係將研磨墊3表面之目標溫度從第一目標溫度變化到第二目標溫度,不過一種實施形態亦可在晶圓W之研磨中將目標溫度維持一定。 Next, referring to the twenty-first figure, the wafer is polished using the pad temperature adjusting device 5. An embodiment of W. In the embodiment described below, in the wafer W polishing, the target temperature of the surface of the polishing pad 3 is changed from the first target temperature to the second target temperature. However, in one embodiment, the target temperature may be maintained during the polishing of the wafer W. for sure.
本實施形態在開始研磨晶圓W前,先使墊接觸構件11接觸於研磨墊3的表面(研磨面),並將研磨墊3表面預先加熱(前加熱工序)。該前加熱工序係將研磨墊3表面之目標溫度設定成最大值。墊表面溫度超過第一目標溫度時,研磨墊3表面之目標溫度從最大值切換成第一目標溫度。第一目標溫度係比最大值低之溫度。再者,晶圓W接觸於研磨墊3表面開始研磨晶圓W(第一研磨工序)。由於研磨墊3表面在開始研磨晶圓W前預先加熱,因此可以高研磨率開始研磨晶圓W。 In the present embodiment, before the wafer W is started to be polished, the pad contact member 11 is brought into contact with the surface (polishing surface) of the polishing pad 3, and the surface of the polishing pad 3 is heated in advance (preheating step). This pre-heating process sets the target temperature of the surface of the polishing pad 3 to the maximum value. When the pad surface temperature exceeds the first target temperature, the target temperature of the surface of the polishing pad 3 is switched from the maximum value to the first target temperature. The first target temperature is a temperature that is lower than the maximum. Further, the wafer W is brought into contact with the surface of the polishing pad 3 to start polishing the wafer W (first polishing step). Since the surface of the polishing pad 3 is preheated before the wafer W is started to be polished, the wafer W can be polished at a high polishing rate.
開始第一研磨工序後經過指定時間時,或是晶圓W之膜厚達到指定值時,在晶圓W接觸於研磨墊3的狀態下,研磨墊3表面之目標溫度從第一目標溫度變成第二目標溫度。在研磨墊3表面溫度維持在第二目標溫度狀態下研磨晶圓W(第二研磨工序)。 When a predetermined time elapses after the first polishing process is started, or when the film thickness of the wafer W reaches a predetermined value, the target temperature of the surface of the polishing pad 3 changes from the first target temperature in a state where the wafer W contacts the polishing pad 3. Second target temperature. The wafer W is polished while the surface temperature of the polishing pad 3 is maintained at the second target temperature (second polishing step).
採用本實施形態時,由於將研磨墊3之表面溫度維持在比第二目標溫度高的第一目標溫度,而且進行第一研磨工序,因此可以高研磨率研磨晶圓W。由於第二研磨工序係以低研磨率研磨晶圓W,因此可精密調整晶圓W之膜厚輪廓。 According to this embodiment, since the surface temperature of the polishing pad 3 is maintained at the first target temperature higher than the second target temperature, and the first polishing step is performed, the wafer W can be polished at a high polishing rate. Since the second polishing step polishes the wafer W at a low polishing rate, the film thickness profile of the wafer W can be precisely adjusted.
第二十二圖係顯示墊溫度調整裝置5之其他實施形態的圖。由於未特別說明之本實施形態的構成及動作與第二圖所示的墊溫度調整裝置5相同,因此省略其重複說明。另外,第二十二圖省略了上方環形轉盤1及研磨液供給噴嘴4的圖示。如第二十二圖所示,沿著研磨墊3之半徑方向 排列複數個墊溫度測定器39。本實施形態係配置3個墊溫度測定器39,不過亦可配置2個或4個以上。複數個墊溫度測定器39連接於閥門控制部40。 The twenty-second diagram shows a view of another embodiment of the pad temperature adjusting device 5. Since the configuration and operation of the present embodiment, which are not particularly described, are the same as those of the pad temperature adjusting device 5 shown in Fig. 2, the description thereof will not be repeated. In addition, the illustration of the upper annular turntable 1 and the polishing liquid supply nozzle 4 is omitted in the twenty-second diagram. As shown in the twenty-second figure, along the radial direction of the polishing pad 3 A plurality of pad temperature measuring devices 39 are arranged. In the present embodiment, three pad temperature measuring devices 39 are disposed, but two or four or more may be disposed. A plurality of pad temperature measuring devices 39 are connected to the valve control unit 40.
墊接觸構件11保持於滑動機構71。該滑動機構71係構成在墊接觸構件11之下面(亦即墊接觸面)接觸於研磨墊3表面的狀態下,可使墊接觸構件11在研磨墊3之半徑方向移動。滑動機構71係由伺服馬達與滾珠螺桿機構之組合、或是空氣氣缸等構成。 The pad contact member 11 is held by the slide mechanism 71. The sliding mechanism 71 is configured to move the pad contact member 11 in the radial direction of the polishing pad 3 in a state where the lower surface of the pad contact member 11 (that is, the pad contact surface) is in contact with the surface of the polishing pad 3. The slide mechanism 71 is composed of a combination of a servo motor and a ball screw mechanism, or an air cylinder or the like.
閥門控制部40依據藉由墊溫度測定器39所測定之墊表面溫度操作滑動機構71使墊表面溫度之分布成為目標溫度分布。如此,藉由控制墊表面溫度之分布,可控制在研磨墊3上研磨之晶圓W的膜厚輪廓。 The valve control unit 40 operates the slide mechanism 71 in accordance with the pad surface temperature measured by the pad temperature measuring device 39 to make the distribution of the pad surface temperature a target temperature distribution. Thus, by controlling the distribution of the surface temperature of the pad, the film thickness profile of the wafer W polished on the polishing pad 3 can be controlled.
第二十三圖係顯示墊溫度調整裝置5之另一種實施形態的圖。想將研磨墊3急速加溫或冷卻時,殘留於墊接觸構件11中之冷卻水液或加熱液會妨礙急加熱、急冷卻。第二十三圖所示之實施形態則適合將研磨墊3急速加熱及急速冷卻。 The twenty-third figure shows a diagram of another embodiment of the pad temperature adjusting device 5. When the polishing pad 3 is rapidly heated or cooled, the cooling water or the heating liquid remaining in the pad contact member 11 may hinder rapid heating or rapid cooling. The embodiment shown in Fig. 23 is suitable for rapid heating and rapid cooling of the polishing pad 3.
如第二十三圖所示,墊溫度調整裝置5具備:分別連接於墊接觸構件11之加熱流路61及冷卻流路62的第一加熱液供給管32A及第二加熱液供給管32B;及分別連接於墊接觸構件11之加熱流路61及冷卻流路62的第一加熱液回流管33A及第二加熱液回流管33B。第二加熱液供給管32B連接於加熱液供給槽31,第一加熱液供給管32A從第二加熱液供給管32B分歧。第一加熱液回流管33A及第二加熱液回流管33B連接於加熱液供給槽31。 As shown in the twenty-third figure, the pad temperature adjusting device 5 includes a first heating liquid supply pipe 32A and a second heating liquid supply pipe 32B which are respectively connected to the heating flow path 61 and the cooling flow path 62 of the pad contact member 11; And a first heating liquid return pipe 33A and a second heating liquid return pipe 33B which are respectively connected to the heating flow path 61 of the pad contact member 11 and the cooling flow path 62. The second heating liquid supply pipe 32B is connected to the heating liquid supply tank 31, and the first heating liquid supply pipe 32A is branched from the second heating liquid supply pipe 32B. The first heating liquid return pipe 33A and the second heating liquid return pipe 33B are connected to the heating liquid supply tank 31.
冷卻液供給管51連接於第一加熱液供給管32A,冷卻液排出管52連接於第一加熱液回流管33A。從冷卻液供給管51分歧之第一分歧管81連接於第二加熱液供給管32B,從冷卻液排出管52分歧之第二分歧管84連接 於第二加熱液回流管33B。 The coolant supply pipe 51 is connected to the first heating liquid supply pipe 32A, and the coolant discharge pipe 52 is connected to the first heating liquid return pipe 33A. The first branch pipe 81 branched from the coolant supply pipe 51 is connected to the second heating liquid supply pipe 32B, and the second branch pipe 84 branched from the coolant discharge pipe 52 is connected. The second heating liquid return pipe 33B.
第一加熱液供給管32A中設有開閉閥門V1及流量控制閥門R1,第二加熱液供給管32B中設有開閉閥門V5及流量控制閥門R2。冷卻液供給管51中設有開閉閥門V2,冷卻液排出管52中設有開閉閥門V4。第一加熱液回流管33A中設有開閉閥門V3,第二加熱液回流管33B中設有開閉閥門V7。進一步在第一分歧管81中設有開閉閥門V6,第二分歧管84中設有開閉閥門V8。此等全部開閉閥門及流量控制閥門連接於閥門控制部40,而藉由閥門控制部40操作。 The first heating liquid supply pipe 32A is provided with an opening and closing valve V1 and a flow rate control valve R1, and the second heating liquid supply pipe 32B is provided with an opening and closing valve V5 and a flow rate control valve R2. The coolant supply pipe 51 is provided with an opening and closing valve V2, and the coolant discharge pipe 52 is provided with an opening and closing valve V4. The first heating liquid return pipe 33A is provided with an opening and closing valve V3, and the second heating liquid return pipe 33B is provided with an opening and closing valve V7. Further, the first branch pipe 81 is provided with an opening and closing valve V6, and the second branch pipe 84 is provided with an opening and closing valve V8. These all opening and closing valves and flow control valves are connected to the valve control unit 40 and operated by the valve control unit 40.
將研磨墊3急速加熱時,閥門控制部40打開開閉閥門V1、V3、V5、V7,關閉開閉閥門V2、V4、V6、V8。流量控制閥門R1、R2全開。加熱液通過第一加熱液供給管32A及第二加熱液供給管32B供給至墊接觸構件11之加熱流路61及冷卻流路62兩者,進一步通過第一加熱液回流管33A及第二加熱液回流管33B返回加熱液供給槽31。如此,對墊接觸構件11之加熱流路61及冷卻流路62兩者供給加熱液,因此墊接觸構件11可將研磨墊3急速加熱。 When the polishing pad 3 is rapidly heated, the valve control unit 40 opens the opening and closing valves V1, V3, V5, and V7, and closes the opening and closing valves V2, V4, V6, and V8. The flow control valves R1, R2 are fully open. The heating liquid is supplied to both the heating flow path 61 and the cooling flow path 62 of the pad contact member 11 through the first heating liquid supply pipe 32A and the second heating liquid supply pipe 32B, and further passes through the first heating liquid return pipe 33A and the second heating. The liquid return pipe 33B is returned to the heating liquid supply tank 31. In this manner, since the heating liquid is supplied to both the heating flow path 61 and the cooling flow path 62 of the pad contact member 11, the pad contact member 11 can rapidly heat the polishing pad 3.
研磨墊3之表面溫度超過臨限值時,閥門控制部40在打開開閉閥門V1、V3狀態下繼續打開開閉閥門V6、V8,進一步在關閉開閉閥門V2、V4狀態下繼續關閉開閉閥門V5、V7。流量控制閥門R1、R2依據目標溫度與研磨墊3的表面溫度差異,藉由閥門控制部40進行PID控制。 When the surface temperature of the polishing pad 3 exceeds the threshold value, the valve control unit 40 continues to open the opening and closing valves V6 and V8 while opening and closing the opening and closing valves V1 and V3, and further closes the opening and closing valves V5 and V7 while closing the opening and closing valves V2 and V4. . The flow rate control valves R1, R2 perform PID control by the valve control unit 40 in accordance with the difference between the target temperature and the surface temperature of the polishing pad 3.
將研磨墊3急速冷卻時,閥門控制部40關閉開閉閥門V1、V3、V5、V7,打開開閉閥門V2、V4、V6、V8。流量控制閥門R1、R2全開。冷卻液通過冷卻液供給管51、第一加熱液供給管32A、第一分歧管81及第二 加熱液供給管32B供給至墊接觸構件11的加熱流路61及冷卻流路62兩者。進一步冷卻液通過第一加熱液回流管33A、第二加熱液回流管33B、第二分歧管84及冷卻液排出管52排出。如此,對墊接觸構件11之加熱流路61及冷卻流路62兩者供給冷卻液,因此墊接觸構件11可將研磨墊3急速冷卻。 When the polishing pad 3 is rapidly cooled, the valve control unit 40 closes the opening and closing valves V1, V3, V5, and V7, and opens and closes the valves V2, V4, V6, and V8. The flow control valves R1, R2 are fully open. The coolant passes through the coolant supply pipe 51, the first heating liquid supply pipe 32A, the first branch pipe 81, and the second The heating liquid supply pipe 32B is supplied to both the heating flow path 61 and the cooling flow path 62 of the pad contact member 11. Further, the coolant is discharged through the first heating liquid return pipe 33A, the second heating liquid return pipe 33B, the second branch pipe 84, and the coolant discharge pipe 52. In this manner, since the cooling liquid is supplied to both the heating flow path 61 and the cooling flow path 62 of the pad contact member 11, the pad contact member 11 can rapidly cool the polishing pad 3.
研磨墊3之表面溫度低於臨限值時,閥門控制部40在關閉開閉閥門V5、V7狀態下繼續打開開閉閥門V1、V3,進一步在打開開閉閥門V6、V8狀態下繼續關閉開閉閥門V2、V4。流量控制閥門R1、R2依據目標溫度與研磨墊3的表面溫度差異,藉由閥門控制部40進行PID控制。 When the surface temperature of the polishing pad 3 is lower than the threshold value, the valve control unit 40 continues to open the opening and closing valves V1 and V3 while closing the opening and closing valves V5 and V7, and further closes the opening and closing valve V2 while opening and closing the opening and closing valves V6 and V8. V4. The flow rate control valves R1, R2 perform PID control by the valve control unit 40 in accordance with the difference between the target temperature and the surface temperature of the polishing pad 3.
墊溫度調整裝置5之動作從上述之墊急速冷卻動作切換成一般的墊溫度控制動作時,若打開開閉閥門V3的時間過早,冷卻液會流入加熱液供給槽31,可能造成供給至墊接觸構件11之加熱液的溫度降低。因此,如第二十四圖所示,宜將溫度感測器或熱電偶等溫度檢測器90安裝於第一加熱液回流管33A。溫度檢測器90配置於墊接觸構件11與開閉閥門V3之間。並宜將溫度檢測器90配置於開閉閥門V3的附近。溫度檢測器90連接於閥門控制部40。 When the operation of the pad temperature adjusting device 5 is switched from the above-described pad rapid cooling operation to the normal pad temperature control operation, if the opening and closing of the valve V3 is opened too early, the coolant may flow into the heating liquid supply groove 31, possibly causing the supply to be in contact with the pad. The temperature of the heating liquid of the member 11 is lowered. Therefore, as shown in Fig. 24, a temperature detector 90 such as a temperature sensor or a thermocouple is preferably attached to the first heating liquid return pipe 33A. The temperature detector 90 is disposed between the pad contact member 11 and the opening and closing valve V3. It is preferable to arrange the temperature detector 90 in the vicinity of the opening and closing valve V3. The temperature detector 90 is connected to the valve control unit 40.
研磨墊3急速冷卻中打開開閉閥門V2、V4、V6、V8,並關閉開閉閥門V1、V3、V5、V7。墊表面溫度低於上述之臨限值時,打開開閉閥門V1,不過不立即打開開閉閥門V3。溫度檢測器90檢測流經第一加熱液回流管33A之液體溫度超過設定值時,閥門控制部40打開開閉閥門V3並關閉開閉閥門V4。藉由如此操作,可防止墊接觸構件11及第一加熱液回流管33A中殘留之冷卻液流入加熱液供給槽31。 When the polishing pad 3 is rapidly cooled, the opening and closing valves V2, V4, V6, and V8 are opened, and the opening and closing valves V1, V3, V5, and V7 are closed. When the surface temperature of the mat is lower than the above-mentioned threshold value, the opening and closing valve V1 is opened, but the opening and closing valve V3 is not immediately opened. When the temperature detector 90 detects that the temperature of the liquid flowing through the first heated liquid return pipe 33A exceeds the set value, the valve control unit 40 opens the opening and closing valve V3 and closes the opening and closing valve V4. By doing so, it is possible to prevent the coolant remaining in the pad contact member 11 and the first heating liquid return pipe 33A from flowing into the heating liquid supply tank 31.
將流經第一加熱液供給管32A及第一加熱液回流管33A之液 體從加熱液切換成冷卻液時,亦可在打開開閉閥門V3狀態下將加熱液返回加熱液供給槽31,直至溫度檢測器90檢測出流經第一加熱液回流管33A之液體溫度低於設定值(與上述之設定值不同)。藉由如此操作,可減少加熱液捨棄量,而使加熱液有效循環。 The liquid flowing through the first heating liquid supply pipe 32A and the first heating liquid return pipe 33A When the body is switched from the heating liquid to the cooling liquid, the heating liquid may be returned to the heating liquid supply tank 31 while the opening and closing valve V3 is opened, until the temperature detector 90 detects that the temperature of the liquid flowing through the first heating liquid return pipe 33A is lower than the temperature. Set value (different from the above set value). By doing so, the amount of the heating liquid can be reduced, and the heating liquid can be effectively circulated.
上述實施形態係以具有本發明所屬技術領域之一般知識者可實施本發明為目的而記載者。熟悉本技術之業者當然可形成上述實施形態之各種變形例,且本發明之技術性思想亦可適用於其他實施形態。因此,本發明不限定於記載之實施形態,應解釋成係按照藉由申請專利範圍所定義之技術性思想的最廣範圍。 The above embodiments are described for the purpose of carrying out the invention by those having ordinary skill in the art to which the invention pertains. Those skilled in the art can of course form various modifications of the above-described embodiments, and the technical idea of the present invention can also be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, and should be construed as the broadest scope of the technical idea defined by the scope of the claims.
1‧‧‧上方環形轉盤 1‧‧‧Upround turntable
2‧‧‧研磨台 2‧‧‧ polishing table
3‧‧‧研磨墊 3‧‧‧ polishing pad
4‧‧‧研磨液供給噴嘴 4‧‧‧ polishing liquid supply nozzle
5‧‧‧墊溫度調整裝置 5‧‧‧Material temperature adjustment device
11‧‧‧墊接觸構件 11‧‧‧mat contact members
30‧‧‧液體供給系統 30‧‧‧Liquid supply system
31‧‧‧加熱液供給槽 31‧‧‧heating liquid supply tank
32‧‧‧加熱液供給管 32‧‧‧heating liquid supply pipe
33‧‧‧加熱液回流管 33‧‧‧heating liquid return pipe
39‧‧‧墊溫度測定器 39‧‧‧Material temperature tester
40‧‧‧閥門控制部 40‧‧‧ Valve Control Department
41‧‧‧第一開閉閥門 41‧‧‧First opening and closing valve
42‧‧‧第一流量控制閥門 42‧‧‧First flow control valve
51‧‧‧冷卻液供給管 51‧‧‧ coolant supply pipe
52‧‧‧冷卻液排出管 52‧‧‧Cooling drain
55‧‧‧第二開閉閥門 55‧‧‧Second opening and closing valve
56‧‧‧第二流量控制閥門 56‧‧‧Second flow control valve
W‧‧‧晶圓 W‧‧‧ wafer
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JP2017-015389 | 2017-01-31 |
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JP3235970B2 (en) * | 1997-04-07 | 2001-12-04 | 株式会社ノリタケカンパニーリミテド | Rotary platen temperature holding structure |
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JP6580939B2 (en) * | 2015-10-20 | 2019-09-25 | 株式会社荏原製作所 | Polishing equipment |
-
2017
- 2017-01-31 JP JP2017015389A patent/JP6929072B2/en active Active
- 2017-02-17 SG SG10201701274YA patent/SG10201701274YA/en unknown
- 2017-02-17 KR KR1020170021358A patent/KR102604745B1/en active IP Right Grant
- 2017-02-20 TW TW106105566A patent/TWI742041B/en active
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CN112658972A (en) * | 2019-10-16 | 2021-04-16 | 株式会社荏原制作所 | Grinding device |
CN114800147A (en) * | 2022-04-29 | 2022-07-29 | 江苏华杰不锈钢制品有限公司 | A grinder for old and useless steel material |
Also Published As
Publication number | Publication date |
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KR20170098703A (en) | 2017-08-30 |
JP2017148933A (en) | 2017-08-31 |
KR102604745B1 (en) | 2023-11-22 |
TWI742041B (en) | 2021-10-11 |
SG10201701274YA (en) | 2017-09-28 |
JP6929072B2 (en) | 2021-09-01 |
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