TW201729480A

TW201729480A - Target expansion rate control in an extreme ultraviolet light source

Info

Publication number: TW201729480A
Application number: TW105125348A
Authority: TW
Inventors: 羅伯特傑拉法斯; 丹尼爾傑森萊格斯
Original assignee: Ａｓｍｌ荷蘭公司
Priority date: 2015-08-12
Filing date: 2016-08-09
Publication date: 2017-08-16
Also published as: JP2018532138A; KR20180038543A; TWI788998B; JP6952844B2; CN108353489B; JP2020194178A; KR102631831B1; JP2022008595A; TW202210958A; JP7241143B2; CN113966061A; WO2017027566A1; JP6744397B2; KR20240015174A; CN108353489A; TWI739755B

Abstract

A method includes providing a target material that comprises a component that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first beam of radiation toward the target material to deliver energy to the target material to modify a geometric distribution of the target material to form a modified target; directing a second beam of radiation toward the modified target, the second beam of radiation converting at least part of the modified target to plasma that emits EUV light; measuring one or more characteristics associated with one or more of the target material and the modified target relative to the first beam of radiation; and controlling an amount of radiant exposure delivered to the target material from the first beam of radiation based on the one or more measured characteristics to within a predetermined range of energies.

Description

極紫外線光源中之目標擴張率控制 Target expansion rate control in extreme ultraviolet light source

所揭示主題係關於控制用於雷射產生電漿極紫外線光源之目標材料之擴張率。 The disclosed subject matter relates to controlling the rate of expansion of a target material used in a laser to produce a plasma extreme ultraviolet light source.

極紫外線(EUV)光(例如，具有為大約50奈米或更小之波長之電磁輻射(有時亦被稱作軟x射線)且包括處於大約13奈米之波長之光)可用於光微影程序中以在基板(例如，矽晶圓)中產生極小特徵。 Extreme ultraviolet (EUV) light (eg, electromagnetic radiation having a wavelength of about 50 nanometers or less (sometimes referred to as soft x-rays) and including light at a wavelength of about 13 nm) can be used for light microscopy In the shadow program, extremely small features are produced in a substrate (for example, a germanium wafer).

用以產生EUV光之方法包括但未必限於運用在EUV範圍內之發射譜線而將具有一元素(例如，氙、鋰或錫)之材料轉換成電漿狀態。在一種此類方法(常常被稱為雷射產生電漿「LPP」)中，可藉由運用可被稱作驅動雷射之經放大光束來輻照目標材料(例如，呈材料之小滴、板、帶、串流或叢集之形式)而產生所需電漿。對於此程序，通常在例如真空腔室之密封容器中產生電漿，且使用各種類型之度量衡設備來監視電漿。 Methods for producing EUV light include, but are not necessarily limited to, the use of an emission line in the EUV range to convert a material having an element (eg, yttrium, lithium, or tin) into a plasma state. In one such method (often referred to as laser-generated plasma "LPP"), the target material can be irradiated by using an amplified beam that can be referred to as a driven laser (eg, as a droplet of material, The form of the plate, strip, stream or cluster) produces the desired plasma. For this procedure, plasma is typically produced in a sealed container such as a vacuum chamber, and various types of metrology equipment are used to monitor the plasma.

在一些通用態樣中，一種方法包括：提供一目標材料，該目標材料包含當轉換成電漿時發射極紫外線(EUV)光之一組份；將一第一輻射光束導引朝向該目標材料以將能量遞送至該目標材料，以修改該目標材料之一幾何分佈以形成一經修改目標；將一第二輻射光束導引朝向該經修改目標，該第二輻射光束將該經修改目標之至少部分轉換成發射EUV光之電漿；量測相對於該第一輻射光束的與該目標材料及該經修改目標中之一或多者相關聯的一或多個特性；及基於該一或多個經量測特性將自該第一輻射光束遞送至該目標材料之放射曝光量(radiant exposure)之一量控制在一預定能量範圍內。 In some general aspects, a method includes providing a target material comprising one component of an emitter ultraviolet (EUV) light when converted to a plasma; directing a first radiation beam toward the target material Delivering energy to the target material to modify a geometric distribution of the target material to form a modified target; directing a second radiation beam Aiming the modified target, the second radiation beam converts at least a portion of the modified target into a plasma that emits EUV light; measuring one of the target material and the modified target relative to the first radiation beam Or one or more characteristics associated with the plurality; and controlling, by the one or more measured characteristics, an amount of radiation exposure from the first radiation beam to the target material to be controlled at a predetermined Within the energy range.

實施可包括以下特徵中之一或多者。舉例而言，可藉由量測該第一輻射光束之一能量來量測與該目標材料及該經修改目標中之一或多者相關聯的該一或多個特性。可藉由量測自該目標材料之一光學反射表面反射的該第一輻射光束之該能量來量測該第一輻射光束之該能量。可藉由量測導引朝向該目標材料之該第一輻射光束之一能量來量測該第一輻射光束之該能量。可藉由量測橫越垂直於該第一輻射光束之一傳播方向的一方向之一空間積分能量來量測該第一輻射光束之該能量。 Implementations may include one or more of the following features. For example, the one or more characteristics associated with one or more of the target material and the modified target can be measured by measuring energy of one of the first radiation beams. The energy of the first radiation beam can be measured by measuring the energy of the first radiation beam reflected from the optically reflective surface of one of the target materials. The energy of the first radiation beam can be measured by measuring energy directed to one of the first radiation beams of the target material. The energy of the first radiation beam can be measured by measuring a spatially integrated energy traversing one direction perpendicular to the direction of propagation of one of the first radiation beams.

可藉由使該目標材料與該第一輻射光束之涵蓋其共焦參數之一區域重疊而將該第一輻射光束導引朝向該目標材料。該共焦參數可大於1.5毫米。 The first radiation beam can be directed toward the target material by overlapping the target material with a region of the first radiation beam that covers one of its confocal parameters. The confocal parameter can be greater than 1.5 mm.

可藉由量測該目標材料相對於一目標位置之一位置來量測與該目標材料及該經修改目標中之一或多者相關聯的該一或多個特性。該目標位置可與該第一輻射光束之一光束腰重合。可沿著一第一光束軸線來導引該第一輻射光束，且可沿著平行於該第一光束軸線之一方向量測該目標材料之該位置。可量測相對於收集該經發射EUV光之一收集器器件之一主焦點之該目標位置。可藉由沿著兩個或多於兩個非平行方向量測該目標材料之該位置來量測該目標材料之該位置。 The one or more characteristics associated with one or more of the target material and the modified target may be measured by measuring a location of the target material relative to a target location. The target position may coincide with a beam waist of one of the first radiation beams. The first radiation beam can be directed along a first beam axis and the location of the target material can be measured in a direction parallel to one of the first beam axes. The target position relative to the primary focus of one of the collector devices that collect the emitted EUV light can be measured. The location of the target material can be measured by measuring the location of the target material along two or more than two non-parallel directions.

可藉由在該第二輻射光束將該經修改目標之至少部分轉換成電漿之前偵測該經修改目標之一大小來量測與該目標材料及該經修改目標中之一或多者相關聯的該一或多個特性。可藉由估計該經修改目標之一擴張率來量測與該目標材料及該經修改目標中之一或多者相關聯的該一或多個特性。 Measured with one or more of the target material and the modified target by detecting a size of the modified target before the second radiation beam converts at least a portion of the modified target into a plasma The one or more characteristics of the union. By estimating the modified target An expansion rate to measure the one or more characteristics associated with one or more of the target material and the modified target.

可藉由控制該經修改目標之一擴張率而控制自該第一輻射光束遞送至該目標材料之該放射曝光量。 The amount of radiation exposure delivered from the first radiation beam to the target material can be controlled by controlling an expansion rate of the modified target.

可藉由基於該一或多個經量測特性判定是否應調整該第一輻射光束之一特徵而控制自該第一輻射光束遞送至該目標材料之該放射曝光量。可在量測該一或多個特性時執行應調整該第一輻射光束之該特徵之該判定。 The amount of radiation exposure delivered from the first radiation beam to the target material can be controlled by determining whether one of the characteristics of the first radiation beam should be adjusted based on the one or more measured characteristics. This determination that the characteristic of the first radiation beam should be adjusted can be performed while measuring the one or more characteristics.

若判定出應調整該第一輻射光束之該特徵，則可調整該第一輻射光束之一脈衝之一能量含量及該第一輻射光束與該目標材料相互作用之一面積中的一或多者。可藉由調整該第一輻射光束之一脈寬；該第一輻射光束之該脈衝之一持續時間；及調整該第一輻射光束之該脈衝內之一平均功率來調整該第一輻射光束之該脈衝之該能量含量。 If it is determined that the feature of the first radiation beam should be adjusted, one or more of an energy content of one of the first radiation beams and an area of interaction of the first radiation beam with the target material may be adjusted . Adjusting the pulse width of one of the first radiation beams; maintaining one of the pulses of the first radiation beam; and adjusting an average power of the pulse of the first radiation beam to adjust the first radiation beam The energy content of the pulse.

可藉由將第一輻射之脈衝導引朝向該目標材料而將該第一輻射光束導引朝向該目標材料；可藉由針對第一輻射之每一脈衝量測該一或多個特性來量測該一或多個特性；且可藉由針對第一輻射之每一脈衝判定是否應調整該特徵來判定是否應調整該第一輻射光束之該特徵。 The first radiation beam can be directed toward the target material by directing a pulse of the first radiation toward the target material; the amount can be measured by measuring the one or more characteristics for each pulse of the first radiation The one or more characteristics are measured; and whether the feature of the first radiation beam should be adjusted can be determined by determining whether the feature should be adjusted for each pulse of the first radiation.

可藉由在該經發射EUV光之至少一部分正曝光一晶圓時控制自該第一輻射光束遞送至該目標材料之該放射曝光量來控制自該第一輻射光束遞送至該目標材料的該放射曝光量。 Controlling the delivery of the first radiation beam from the first radiation beam to the target material by controlling the amount of radiation exposure delivered from the first radiation beam to the target material while at least a portion of the emitted EUV light is being exposed to a wafer Radiation exposure.

可藉由提供目標材料之一小滴來提供該目標材料；且可藉由將該目標材料之該小滴變換成熔融金屬之一圓盤形體積來修改該目標材料之該幾何分佈。可根據一擴張率將該目標材料小滴變換成該圓盤形體積。 The target material can be provided by providing a droplet of the target material; and the geometric distribution of the target material can be modified by transforming the droplet of the target material into a disc-shaped volume of one of the molten metals. The target material droplet can be transformed into the disc-shaped volume according to an expansion rate.

該方法亦可包括收集該經發射EUV光之至少一部分；及將該經收集EUV光導引朝向一晶圓以將該晶圓曝光至該EUV光。 The method can also include collecting at least a portion of the emitted EUV light; The EUV light is directed toward a wafer to expose the wafer to the EUV light.

可藉由針對導引朝向該目標材料之該第一輻射光束之每一脈衝量測至少一個特性來量測該一或多個特性。 The one or more characteristics can be measured by measuring at least one characteristic for each pulse of the first radiation beam directed toward the target material.

可將該第一輻射光束導引朝向該目標材料使得該目標材料之一部分轉換成發射EUV光之電漿，且相比於自轉換自該經修改目標的該電漿發射之EUV光，自轉換自該目標材料的該電漿發射較少EUV光，且對該目標材料之主要作用為該修改該目標材料之該幾何分佈以形成該修改目標。 The first radiation beam can be directed toward the target material such that one of the target materials is partially converted into a plasma that emits EUV light, and self-converted compared to EUV light emitted from the plasma converted from the modified target. The plasma from the target material emits less EUV light, and the primary effect on the target material is to modify the geometric distribution of the target material to form the modified target.

可藉由將該目標材料之一形狀變換成該經修改目標(其包括根據一擴張率沿著至少一個軸線來擴張該經修改目標)來修改該目標材料之該幾何分佈。可藉由控制該目標材料至該經修改目標之該擴張率而控制遞送至該目標材料之該放射曝光量。 The geometrical distribution of the target material can be modified by transforming one of the target materials into the modified target (which includes expanding the modified target along at least one axis according to an expansion rate). The amount of radiation exposure delivered to the target material can be controlled by controlling the rate of expansion of the target material to the modified target.

可沿著不平行於該第二輻射光束之光軸的該至少一個軸線來擴張該經修改目標。 The modified target can be expanded along the at least one axis that is not parallel to the optical axis of the second radiation beam.

可藉由量測自該經修改目標反射之光子之一數目來量測與該目標材料及該經修改目標中之一或多者相關聯的該一或多個特性。可藉由依據多少光子撞擊該目標材料而量測自該經修改目標反射之光子之該數目來量測自該經修改目標反射的光子之該數目。 The one or more characteristics associated with one or more of the target material and the modified target may be measured by measuring a number of photons reflected from the modified target. The number of photons reflected from the modified target can be measured by measuring the number of photons reflected from the modified target based on how many photons hit the target material.

可藉由將第一輻射之脈衝導引朝向該目標材料而將該第一輻射光束導引朝向該目標材料；及可藉由將第二輻射之脈衝導引朝向該經修改目標而將該第二輻射光束導引朝向該經修改目標。 The first radiation beam can be directed toward the target material by directing a pulse of the first radiation toward the target material; and the first radiation can be directed toward the modified target by directing a pulse of the second radiation The two radiation beams are directed towards the modified target.

可藉由將該第一輻射光束導引通過一或多個光學放大器之一第一集合來導引該第一輻射光束；及可藉由將該第二輻射光束導引通過一或多個光學放大器之一第二集合來導引該第二輻射光束；其中該第一集合中之該等光學放大器中之至少一者處於該第二集合中。 The first radiation beam can be directed by directing the first radiation beam through a first set of one or more optical amplifiers; and by directing the second radiation beam through one or more optics A second set of one of the amplifiers directs the second radiation beam; wherein at least one of the optical amplifiers in the first set is in the second set.

可藉由量測導引朝向該目標材料之該第一輻射光束之一能量來量測與該目標材料及該經修改目標中之一或多者相關聯的該一或多個特性；且可藉由基於該經量測能量調整自該第一輻射光束導引至該目標材料之能量之一量而控制遞送至該目標材料的該放射曝光量。可藉由使該目標材料與該第一輻射光束之涵蓋其共焦參數之一區域重疊而將該第一輻射光束導引朝向該目標材料；且該共焦參數可小於或等於2毫米。 The energy of one of the first radiation beams directed toward the target material can be measured by measuring Measureing the one or more characteristics associated with the one or more of the target material and the modified target; and directing from the first radiation beam to the target material based on the measured energy adjustment The amount of energy is used to control the amount of radiation exposure delivered to the target material. The first radiation beam may be directed toward the target material by overlapping the target material with a region of the first radiation beam that covers one of its confocal parameters; and the confocal parameter may be less than or equal to 2 millimeters.

可藉由調整該第一輻射光束之一屬性而調整自該第一輻射光束導引至該目標材料之能量之該量。 The amount of energy directed from the first radiation beam to the target material can be adjusted by adjusting one of the properties of the first radiation beam.

可藉由調整如下各者中之一或多者而控制自該第一輻射光束遞送至該目標材料之該放射曝光量：恰好在該第一輻射光束將一能量遞送至該目標材料之前的該第一輻射光束之該能量；該目標材料之一位置；及與該第一輻射光束相互作用的該目標材料之一區。 The amount of radiation exposure delivered from the first radiation beam to the target material can be controlled by adjusting one or more of: just prior to the first radiation beam delivering an energy to the target material The energy of the first radiation beam; a location of the target material; and a region of the target material that interacts with the first radiation beam.

可藉由將該第一輻射光束導引通過包括一或多個第一光學放大器的光學組件之一第一集合來導引該第一輻射光束；且可藉由將第二輻射光束導引通過包括一或多個第二光學放大器的光學組件之一第二集合來導引該第二輻射光束；其中光學組件之該第一集合與光學組件之該第二集合相異且與其分離。 The first radiation beam can be directed by directing the first radiation beam through a first set of one of the optical components including the one or more first optical amplifiers; and by directing the second radiation beam through A second set of optical components including one or more second optical amplifiers directs the second radiation beam; wherein the first set of optical components is distinct from and separated from the second set of optical components.

在其他通用態樣中，一種裝置包括：一腔室，其界定接收一第一輻射光束之一初始目標部位及接收一第二輻射光束之一目標部位；一目標材料遞送系統，其經組態以將目標材料提供至該初始目標部位，該目標材料包含當轉換成電漿時發射極紫外線(EUV)光之一材料；一光學源，其經組態以產生該第一輻射光束及該第二輻射光束；及一光學操縱系統。該光學操縱系統經組態以：將該第一輻射光束導引朝向該初始目標部位以將能量遞送至該目標材料，以修改該目標材料之一幾何分佈以形成一經修改目標；及將該第二輻射光束導引朝向該目標部位，以將該經修改目標之至少部分轉換成發射EUV光之電漿。該裝置包括：一量測系統，其量測相對於該第一輻射光束的與該目標材料及該經修改目標中之一或多者相關聯的一或多個特性；及一控制系統，其連接至該目標材料遞送系統、該光學源、該光學操縱系統及該量測系統。該控制系統經組態以自該量測系統接收該一或多個經量測特性，且基於該一或多個經量測特性將一或多個信號發送至該光學源以控制自該第一輻射光束遞送至該目標材料的一放射曝光量。 In other general aspects, a device includes a chamber defining an initial target portion for receiving a first radiation beam and receiving a target portion of a second radiation beam; a target material delivery system configured Providing a target material to the initial target site, the target material comprising one of ultraviolet-emitting ultraviolet (EUV) light when converted into a plasma; an optical source configured to generate the first radiation beam and the first a radiation beam; and an optical manipulation system. The optical steering system is configured to: direct the first radiation beam toward the initial target site to deliver energy to the target material to modify a geometrical distribution of the target material to form a modified target; and The second radiation beam is directed toward the target portion to convert at least a portion of the modified target into an EUV-emitting light Pulp. The apparatus includes: a measurement system that measures one or more characteristics associated with one or more of the target material and the modified target relative to the first radiation beam; and a control system Connected to the target material delivery system, the optical source, the optical manipulation system, and the measurement system. The control system is configured to receive the one or more measured characteristics from the measurement system and to transmit one or more signals to the optical source based on the one or more measured characteristics to control A radiation beam is delivered to a radiation exposure of the target material.

實施可包括以下特徵中之一或多者。舉例而言，該光學操縱系統可包括一聚焦裝置，該聚焦裝置經組態以將該第一輻射光束聚焦於該初始目標部位處或附近，且將該第二輻射光束聚焦於該目標部位處或附近。 Implementations may include one or more of the following features. For example, the optical manipulation system can include a focusing device configured to focus the first radiation beam at or near the initial target site and focus the second radiation beam at the target site Or nearby.

該裝置可包括一光束調整系統，其中該光束調整系統連接至該光學源及該控制系統，且該控制系統經組態以藉由將一或多個信號發送至該光束調整系統來將一或多個信號發送至該光學源以控制遞送至該目標材料之能量之量，該光束調整系統經組態以調整該光學源之一或多個特徵以藉此維持遞送至該目標材料之能量之該量。該光束調整系統可包括耦合至該第一輻射光束之一脈寬調整系統，該脈寬調整系統經組態以調整該第一輻射光束之脈衝之一脈寬。該脈寬調整系統可包括一電光調變器。 The apparatus can include a beam conditioning system, wherein the beam conditioning system is coupled to the optical source and the control system, and the control system is configured to transmit one or more signals to the beam conditioning system A plurality of signals are sent to the optical source to control an amount of energy delivered to the target material, the beam conditioning system configured to adjust one or more features of the optical source to thereby maintain energy delivered to the target material The amount. The beam conditioning system can include a pulse width adjustment system coupled to the first radiation beam, the pulse width adjustment system configured to adjust a pulse width of a pulse of the first radiation beam. The pulse width adjustment system can include an electro-optic modulator.

該光束調整系統可包括耦合至該第一輻射光束之一脈衝功率調整系統，該脈衝功率調整系統經組態以調整該第一輻射光束之脈衝內之一平均功率。該脈衝功率調整系統可包括一聲光調變器。 The beam conditioning system can include a pulse power adjustment system coupled to the first radiation beam, the pulse power adjustment system configured to adjust an average power within a pulse of the first radiation beam. The pulse power adjustment system can include an acousto-optic modulator.

該光束調整系統可經組態以藉由將一或多個信號發送至該光束調整系統來將一或多個信號發送至該光學源以控制導引至該目標材料的能量之該量，該光束調整系統經組態以調整該光學源之一或多個特徵以藉此控制導引至該目標材料之能量之該量。 The beam adjustment system can be configured to transmit one or more signals to the optical source to control the amount of energy directed to the target material by transmitting one or more signals to the beam conditioning system, The beam conditioning system is configured to adjust one or more features of the optical source to thereby control the amount of energy directed to the target material.

該光學源可包括該第一輻射光束傳遞通過的一或多個光學放大器之一第一集合；及該第二輻射光束傳遞通過的一或多個光學放大器之一第二集合，該第一集合中之該等光學放大器中之至少一者處於該第二集合中。該量測系統可在該第一輻射光束經導引朝向該初始目標部位時量測該第一輻射光束之一能量；且該控制系統可經組態以自該量測系統接收該經量測能量，且基於該經量測能量將一或多個信號發送至該光學源以控制自該第一輻射光束導引至該目標材料的能量之一量。 The optical source can include one or more optical amplifications through which the first radiation beam passes a first set of one of the devices; and a second set of one or more optical amplifiers through which the second radiation beam passes, at least one of the optical amplifiers in the first set being in the second set. The measurement system can measure energy of the first radiation beam as the first radiation beam is directed toward the initial target location; and the control system can be configured to receive the measurement from the measurement system Energy, and based on the measured energy, one or more signals are sent to the optical source to control an amount of energy directed from the first radiation beam to the target material.

在一些通用態樣中，一種方法包括：提供一目標材料，該目標材料包括當轉換成電漿時發射極紫外線(EUV)光之一組份；將一第一輻射光束導引朝向該目標材料以將能量遞送至該目標材料，以修改該目標材料之一幾何分佈以形成一經修改目標；將一第二輻射光束導引朝向該經修改目標，該第二輻射光束將該經修改目標之至少部分轉換成發射EUV光之電漿；將自該第一輻射光束遞送至該目標材料之一放射曝光量控制在一預定放射曝光量範圍內；及藉由將自該第一輻射光束遞送至該目標材料之該放射曝光量控制在該預定放射曝光量範圍內而使自該電漿發射的該EUV光之一功率穩定。 In some general aspects, a method includes providing a target material comprising one component of an ultraviolet-emitting ultraviolet (EUV) light when converted into a plasma; directing a first radiation beam toward the target material Delivering energy to the target material to modify a geometric distribution of the target material to form a modified target; directing a second radiation beam toward the modified target, the second radiation beam at least modifying the modified target Partially converting into a plasma that emits EUV light; controlling a radiation exposure amount from the first radiation beam to the target material to be within a predetermined radiation exposure amount; and by delivering the first radiation beam to the The radiation exposure amount of the target material is controlled within the predetermined radiation exposure amount to stabilize the power of one of the EUV light emitted from the plasma.

實施可包括以下特徵中之一或多者。舉例而言，可藉由將該第一輻射光束導引通過包括一或多個第一光學放大器的光學組件之一第一集合來導引該第一輻射光束；及可藉由將該第二輻射光束導引通過包括一或多個第二光學放大器的光學組件之一第二集合來導引該第二輻射光束。光學組件之該第一集合可與光學組件之該第二集合相異且與其分離。 Implementations may include one or more of the following features. For example, the first radiation beam can be directed by directing the first radiation beam through a first set of one of the optical components including the one or more first optical amplifiers; and by the second The radiation beam is directed through a second set of one of the optical components including one or more second optical amplifiers to direct the second radiation beam. The first set of optical components can be distinct from and separated from the second set of optical components.

可藉由提供目標材料之一小滴來提供該目標材料；且可藉由將目標材料之該小滴變換成具有一實質上平面表面的熔融金屬之一圓盤形體積來修改該目標材料之該幾何分佈。 The target material can be provided by providing a droplet of the target material; and the target material can be modified by transforming the droplet of the target material into a disc-shaped volume of one of the molten metals having a substantially planar surface. This geometric distribution.

可藉由提供目標材料之一小滴來提供該目標材料；且可藉由將目標材料之該小滴變換成熔融金屬粒子之一霧狀物形體積來修改該目標材料之該幾何分佈。 The target material can be provided by providing a droplet of the target material; and the geometric distribution of the target material can be modified by transforming the droplet of the target material into a haze-shaped volume of one of the molten metal particles.

可根據一擴張率將該目標材料變換成該經修改目標。 The target material can be transformed into the modified target according to an expansion rate.

可藉由如下操作來控制自該第一輻射光束遞送至該目標材料之該放射曝光量：量測相對於該第一輻射光束的與該目標材料及該經修改目標中之一或多者相關聯的一或多個特性；基於該一或多個經量測特性將自該第一輻射光束遞送至該目標材料之一放射曝光量維持在一預定放射曝光量範圍內。 The amount of radiation exposure delivered from the first radiation beam to the target material can be controlled by measuring: one or more of the target material and the modified target relative to the first radiation beam One or more characteristics of the combination; the amount of radiation exposure delivered from the first radiation beam to the target material is maintained within a predetermined amount of radiation exposure based on the one or more measured characteristics.

可藉由估計該經修改目標之一擴張率而控制自該第一輻射光束遞送至該目標材料之該放射曝光量。可藉由維持該經修改目標之一擴張率而控制自該第一輻射光束遞送至該目標材料之該放射曝光量。 The amount of radiation exposure delivered from the first radiation beam to the target material can be controlled by estimating an expansion rate of the modified target. The amount of radiation exposure delivered from the first radiation beam to the target material can be controlled by maintaining an expansion rate of the modified target.

可藉由判定是否應調整該第一輻射光束之一特徵而控制自該第一輻射光束遞送至該目標材料之該放射曝光量。可藉由調整該第一輻射光束之每一脈衝之一能量含量，及該第一輻射光束與該目標材料相互作用之一面積中之一或多者而控制自該第一輻射光束遞送至該目標材料之該放射曝光量。可藉由調整如下各者中之一或多者來調整該第一輻射光束之每一脈衝之該能量含量：該第一輻射光束之每一脈衝之一寬度；該第一輻射光束之每一脈衝之一持續時間；及該第一輻射光束之每一脈衝之一功率。 The amount of radiation exposure delivered from the first radiation beam to the target material can be controlled by determining whether one of the characteristics of the first radiation beam should be adjusted. Controlling the delivery of the first radiation beam to the one by adjusting one of the energy levels of each of the first radiation beams and one of the areas of interaction of the first radiation beam with the target material The amount of radiation exposure of the target material. The energy content of each pulse of the first radiation beam can be adjusted by adjusting one or more of: one of each pulse of the first radiation beam; each of the first radiation beams One of the durations of the pulses; and one of the pulses of each of the first radiation beams.

可藉由在自該電漿發射之該EUV光之至少一部分正曝光一晶圓時使該EUV光之該功率穩定而使自該電漿發射的該EUV光之該功率穩定。 The power of the EUV light emitted from the plasma can be stabilized by stabilizing the power of the EUV light while at least a portion of the EUV light emitted from the plasma is being exposed.

該方法亦可包括收集該經發射EUV光之至少一部分；及將該經收集EUV光導引朝向一晶圓以將該晶圓曝光至該EUV光。 The method can also include collecting at least a portion of the emitted EUV light; and directing the collected EUV light toward a wafer to expose the wafer to the EUV light.

可藉由將該目標材料之一形狀變換成該經修改目標(其包括根據一擴張率沿著至少一個軸線來擴張該經修改目標)來修改該目標材料之該幾何分佈。 The geometrical distribution of the target material can be modified by transforming one of the target materials into the modified target (which includes expanding the modified target along at least one axis according to an expansion rate).

可藉由調整該第一輻射光束之一屬性而控制自該第一輻射光束遞送至該目標材料之該放射曝光量。可藉由調整該第一輻射光束之一能量而調整該第一輻射光束之該屬性。 The amount of radiation exposure delivered from the first radiation beam to the target material can be controlled by adjusting one of the properties of the first radiation beam. The property of the first radiation beam can be adjusted by adjusting the energy of one of the first radiation beams.

在其他通用態樣中，一種裝置包括：一腔室，其界定接收一第一輻射光束之一初始目標部位及接收一第二輻射光束之一目標部位；一目標材料遞送系統，其經組態以將目標材料提供至該初始目標部位，該目標材料包含當轉換成電漿時發射極紫外線(EUV)光之一材料；一光學源，其經組態以產生該第一輻射光束及該第二輻射光束；及一光學操縱系統。該光學操縱系統經組態以：將該第一輻射光束導引朝向該初始目標部位以將能量遞送至該目標材料，以修改該目標材料之一幾何分佈以形成一經修改目標；及將該第二輻射光束導引朝向該目標部位，以將該經修改目標之至少部分轉換成發射EUV光之電漿。該裝置包括一控制系統，該控制系統連接至該目標材料遞送系統、該光學源及該光學操縱系統，且經組態以將一或多個信號發送至該光學源以將自該第一輻射光束遞送至該目標材料的一放射曝光量控制在一預定放射曝光量範圍內，以藉此使自該電漿發射之EUV光之一功率穩定。 In other general aspects, a device includes a chamber defining an initial target portion for receiving a first radiation beam and receiving a target portion of a second radiation beam; a target material delivery system configured Providing a target material to the initial target site, the target material comprising one of ultraviolet-emitting ultraviolet (EUV) light when converted into a plasma; an optical source configured to generate the first radiation beam and the first a radiation beam; and an optical manipulation system. The optical steering system is configured to: direct the first radiation beam toward the initial target site to deliver energy to the target material to modify a geometrical distribution of the target material to form a modified target; and A second radiation beam is directed toward the target site to convert at least a portion of the modified target into a plasma that emits EUV light. The apparatus includes a control system coupled to the target material delivery system, the optical source, and the optical manipulation system, and configured to send one or more signals to the optical source to be derived from the first radiation A radiation exposure amount of the light beam delivered to the target material is controlled within a predetermined amount of radiation exposure to thereby stabilize one of the EUV light emitted from the plasma.

實施可包括以下特徵中之一或多者。舉例而言，該裝置亦可包括一量測系統，該量測系統量測相對於該第一輻射光束的與該目標材料及該經修改目標中之一或多者相關聯的一或多個特性，其中該控制系統連接至該量測系統。 Implementations may include one or more of the following features. For example, the apparatus can also include a metrology system that measures one or more associated with the target material and one or more of the modified target relative to the first radiation beam A feature wherein the control system is coupled to the measurement system.

該裝置亦可包括一光束調整系統，其中該光束調整系統連接至該光學源及該控制系統，且該控制系統經組態以藉由將一或多個信號發送至該光束調整系統來將一或多個信號發送至該光學源以控制遞送至該目標材料的該放射曝光量，該光束調整系統經組態以調整該光學源之一或多個特徵以藉此控制遞送至該目標材料的該放射曝光量。 The apparatus can also include a beam conditioning system, wherein the beam conditioning system is coupled to the optical source and the control system, and the control system is configured to transmit one or more signals to the beam conditioning system Or a plurality of signals are sent to the optical source to control the amount of radiation exposure delivered to the target material, the beam conditioning system being configured to adjust one or more features of the optical source to thereby control delivery to the target material The amount of radiation exposure.

100‧‧‧雷射產生電漿(LPP)極紫外線(EUV)光源 100‧‧‧Laser generated plasma (LPP) extreme ultraviolet (EUV) light source

105‧‧‧光學源 105‧‧‧Optical source

110‧‧‧第一輻射光束/輻射 110‧‧‧First radiation beam/radiation

111‧‧‧第一目標部位 111‧‧‧First target site

115‧‧‧第二輻射光束 115‧‧‧second radiation beam

116‧‧‧第二目標部位 116‧‧‧second target site

120‧‧‧目標材料 120‧‧‧Target material

121‧‧‧經修改目標/熔融金屬之圓盤形片件 121‧‧‧ Modified target / disc-shaped piece of molten metal

125‧‧‧目標材料供應系統/目標材料遞送系統 125‧‧‧Target Material Supply System / Target Material Delivery System

129‧‧‧電漿 129‧‧‧ Plasma

130‧‧‧可用極紫外線(EUV)光/輻射 130‧‧‧Ultible ultraviolet (EUV) light/radiation

135‧‧‧集光器系統/集光器 135‧‧‧Light collector system / concentrator

140‧‧‧經收集極紫外線(EUV)光 140‧‧‧ Collecting extreme ultraviolet (EUV) light

145‧‧‧光學裝置 145‧‧‧Optical device

150‧‧‧光束遞送系統 150‧‧‧beam delivery system

152‧‧‧光學操縱組件 152‧‧‧Optical control components

155‧‧‧量測系統 155‧‧‧Measurement system

156‧‧‧聚焦總成 156‧‧‧ Focus assembly

160‧‧‧控制系統 160‧‧‧Control system

165‧‧‧腔室 165‧‧ ‧ chamber

180‧‧‧光束調整系統 180‧‧‧beam adjustment system

210‧‧‧第一聚焦區 210‧‧‧First Focus Area

212‧‧‧第一軸向方向/傳播方向 212‧‧‧First axial direction/propagation direction

215‧‧‧第二聚焦區 215‧‧‧Second Focus Area

217‧‧‧第二軸向方向 217‧‧‧second axial direction

230‧‧‧長軸 230‧‧‧ long axis

235‧‧‧短軸 235‧‧‧ short axis

300‧‧‧第一光學放大器系統/光學放大器之第一集合 300‧‧‧First optical amplifier system / optical amplifier first set

305‧‧‧第二光學放大器系統/光學放大器之第二集合 305‧‧‧Second optical amplifier system/secondary set of optical amplifiers

310‧‧‧第一光產生器 310‧‧‧First Light Generator

311‧‧‧第一脈衝光束 311‧‧‧First pulse beam

315‧‧‧第二光產生器 315‧‧‧Second light generator

316‧‧‧第二脈衝光束 316‧‧‧second pulse beam

320‧‧‧光學系統 320‧‧‧Optical system

325‧‧‧光束路徑組合器 325‧‧‧beam path combiner

326‧‧‧光束路徑分離器 326‧‧‧beam path separator

340‧‧‧雙向色光束***器 340‧‧‧Two-way color beam splitter

342‧‧‧雙向色光束***器 342‧‧‧Two-way color beam splitter

344‧‧‧鏡面 344‧‧ ‧ mirror

346‧‧‧鏡面 346‧‧‧Mirror

350‧‧‧雙向色光束***器 350‧‧‧Two-way color beam splitter

352‧‧‧雙向色光束***器 352‧‧‧Two-way color beam splitter

354‧‧‧鏡面 354‧‧‧Mirror

356‧‧‧鏡面 356‧‧ ‧ mirror

401‧‧‧光學放大器 401‧‧‧Optical amplifier

402‧‧‧光學放大器 402‧‧‧Optical amplifier

403‧‧‧光學放大器 403‧‧‧Optical amplifier

406‧‧‧光學放大器 406‧‧‧Optical amplifier

407‧‧‧光學放大器 407‧‧‧Optical amplifier

408‧‧‧光學放大器 408‧‧‧Optical amplifier

411‧‧‧前置放大器 411‧‧‧ preamplifier

421‧‧‧前置放大器 421‧‧‧ preamplifier

500‧‧‧光學元件 500‧‧‧Optical components

505‧‧‧光學元件 505‧‧‧Optical components

855A‧‧‧量測系統 855A‧‧‧Measurement System

855B‧‧‧量測系統 855B‧‧‧Measurement System

860‧‧‧背向反射輻射 860‧‧‧back-reflecting radiation

955A‧‧‧量測系統 955A‧‧‧Measurement System

955B‧‧‧量測系統 955B‧‧‧Measurement System

955C‧‧‧量測系統 955C‧‧‧Measurement System

990‧‧‧主焦點 990‧‧‧ main focus

1000‧‧‧子控制器 1000‧‧‧Subcontroller

1005‧‧‧子控制器 1005‧‧‧Subcontroller

1010‧‧‧子控制器 1010‧‧‧Subcontroller

1015‧‧‧子控制器 1015‧‧‧Subcontroller

1020‧‧‧輸入及輸出器件 1020‧‧‧Input and output devices

1025‧‧‧可程式化處理器 1025‧‧‧Programmable processor

1030‧‧‧電腦程式產品 1030‧‧‧Computer Program Products

1040‧‧‧分析程式 1040‧‧‧ Analysis program

1100‧‧‧工序 1100‧‧‧ procedures

1105‧‧‧步驟 1105‧‧‧Steps

1110‧‧‧步驟 1110‧‧‧Steps

1115‧‧‧步驟 1115‧‧‧Steps

1120‧‧‧步驟 1120‧‧‧Steps

1125‧‧‧步驟 1125‧‧‧Steps

1200‧‧‧工序 1200‧‧‧ Process

1205‧‧‧步驟 1205‧‧‧Steps

1210‧‧‧步驟 1210‧‧‧Steps

1215‧‧‧步驟 1215‧‧‧Steps

1220‧‧‧步驟 1220‧‧‧Steps

1225‧‧‧步驟 1225‧‧‧Steps

1305A‧‧‧專用子系統 1305A‧‧‧Special Subsystem

1305B‧‧‧專用及分離子系統 1305B‧‧‧Special and Separation Subsystem

1352A‧‧‧光學操縱組件 1352A‧‧‧Optical control components

1352B‧‧‧光學操縱組件 1352B‧‧‧Optical control components

1356A‧‧‧聚焦總成 1356A‧‧‧ Focus Assembly

1356B‧‧‧聚焦總成 1356B‧‧‧ Focus Assembly

L1‧‧‧部位 L1‧‧‧ parts

L2‧‧‧部位 L2‧‧‧ parts

圖1為包括光學源之雷射產生電漿極紫外線光源的方塊圖，該光學源產生導引至目標材料之第一輻射光束及導引至經修改目標之第二輻射光束以將該經修改目標之部分轉換成發射EUV光之電漿；圖2為展示導引至第一目標部位之第一輻射光束及導引至第二目標部位之第二輻射光束的示意圖；圖3A為用於圖1之光源中之例示性光學源的方塊圖；圖3B及圖3C分別為可用於圖1之光學源中之例示性光束路徑組合器及例示性光束路徑分離器的方塊圖；圖4A及圖4B為可用於圖3A之光學源中之例示性光學放大器系統的方塊圖；圖5為可用於圖3A之光學源中之例示性光學放大器系統的方塊圖；圖6為展示導引至第一目標部位之第一輻射光束及導引至第二目標部位之第二輻射光束之另一實施的示意圖；圖7A及圖7B為展示導引至第一目標部位之第一輻射光束之實施的示意圖；圖8A至圖8C及圖9A至圖9C展示量測系統之各種實施的示意圖，量測系統量測與目標材料、經修改目標及第一輻射光束中之任何一或多者相關聯之至少一個特性；圖10為圖1之光源之例示性控制系統的方塊圖；圖11為藉由光源(在控制系統之控制下)執行以用於維持或控制經修改目標之擴張率(ER)以藉此改良光源之轉換效率之例示性工序的流程圖；圖12為藉由光源執行以用於藉由控制自第一輻射光束遞送至目標材料之放射曝光量而使自電漿發射之EUV光之功率穩定的例示性工序之流程圖；及圖13為例示性光學源及例示性光束遞送系統之方塊圖，例示性光學源產生第一輻射光束及第二輻射光束，且例示性光束遞送系統調整第一輻射光束及第二輻射光束且將該第一輻射光束及該第二輻射光束聚焦至各別第一目標部位及第二目標部位。 1 is a block diagram of a laser-generated plasma extreme ultraviolet light source including an optical source that produces a first radiation beam directed to a target material and a second radiation beam directed to the modified target to modify the Part of the target is converted into a plasma that emits EUV light; FIG. 2 is a schematic diagram showing a first radiation beam directed to the first target portion and a second radiation beam directed to the second target portion; FIG. 3A is for use in FIG. A block diagram of an exemplary optical source in a light source of FIG. 1; FIGS. 3B and 3C are block diagrams of an exemplary beam path combiner and an exemplary beam path splitter that can be used in the optical source of FIG. 1, respectively; FIG. 4A and FIG. 4B is a block diagram of an exemplary optical amplifier system that can be used in the optical source of FIG. 3A; FIG. 5 is a block diagram of an exemplary optical amplifier system that can be used in the optical source of FIG. 3A; FIG. Schematic diagram of another implementation of a first radiation beam of a target portion and a second radiation beam directed to a second target portion; FIGS. 7A and 7B are schematic diagrams showing the implementation of a first radiation beam directed to a first target portion. ; Figure 8A to Figure 8C 9A-9C illustrate schematic diagrams of various implementations of a metrology system that measures at least one characteristic associated with any one or more of a target material, a modified target, and a first radiation beam; FIG. a block diagram of an exemplary control system for the light source of FIG. 1; Figure 11 is a flow diagram of an exemplary process performed by a light source (under the control of a control system) for maintaining or controlling the expansion rate (ER) of a modified target to thereby improve the conversion efficiency of the light source; Figure 12 is a A flowchart of an exemplary process performed by a light source for stabilizing the power of EUV light emitted from a plasma by controlling the amount of radiation exposure delivered from the first radiation beam to the target material; and FIG. 13 is an exemplary optical source And a block diagram of an exemplary beam delivery system, the exemplary optical source generating a first radiation beam and a second radiation beam, and the exemplary beam delivery system adjusts the first radiation beam and the second radiation beam and the first radiation beam and the The second radiation beam is focused to the respective first target portion and the second target portion.

揭示用於增加極紫外線(EUV)光產生之轉換效率之技術。參看圖1且如下文更詳細地論述，目標材料120與第一輻射光束110之間的相互作用造成該目標材料變形且幾何地擴張以藉此形成經修改目標121。以增加歸因於經修改目標121與第二輻射光束115之間的相互作用而自電漿轉換之可用EUV光130之量之方式來控制經修改目標121之幾何擴張率。可用EUV光130之量為可經利用以在光學裝置145處使用之EUV光130之量。因此，可用EUV光130之量可取決於若干態樣，諸如，用以利用EUV光130之光學組件之頻寬或中心波長。 Techniques for increasing the conversion efficiency of extreme ultraviolet (EUV) light generation are disclosed. Referring to FIG. 1 and discussed in more detail below, the interaction between the target material 120 and the first radiation beam 110 causes the target material to deform and geometrically expand to thereby form the modified target 121. The geometric expansion rate of the modified target 121 is controlled in a manner that increases the amount of available EUV light 130 that is converted from the plasma due to the interaction between the modified target 121 and the second radiation beam 115. The amount of EUV light 130 that can be used is the amount of EUV light 130 that can be utilized to be used at optical device 145. Thus, the amount of EUV light 130 that can be used can depend on several aspects, such as the bandwidth or center wavelength of the optical components used to utilize EUV light 130.

經修改目標121之幾何擴張率之控制使能夠在該經修改目標121與第二輻射光束115相互作用時控制該經修改目標121之大小或幾何態樣。舉例而言，經修改目標121之幾何擴張率之調整會在該經修改目標121與第二輻射光束115相互作用時調整該經修改目標121之密度，此係因為在該經修改目標121與第二輻射光束115相互作用時該經修改目標121之密度影響由該經修改目標121吸收之輻射之總量及此輻射被吸收所遍及之範圍。隨著經修改目標121之密度增加，在某時刻EUV 光130將不能夠自該經修改目標121逸出且因此可用EUV光130之量可降低。作為另一實例，經修改目標121之幾何擴張率之調整在該經修改目標121與第二輻射光束115相互作用時調整該經修改目標121之表面積。 Control of the geometric expansion rate of the modified target 121 enables control of the size or geometry of the modified target 121 as the modified target 121 interacts with the second radiation beam 115. For example, the adjustment of the geometric expansion rate of the modified target 121 adjusts the density of the modified target 121 when the modified target 121 interacts with the second radiation beam 115, because the modified target 121 and the The density of the modified target 121 as the two radiation beams 115 interact affects the total amount of radiation absorbed by the modified target 121 and the extent to which the radiation is absorbed. As the density of the modified target 121 increases, at some point EUV Light 130 will not be able to escape from the modified target 121 and thus the amount of available EUV light 130 can be reduced. As another example, the adjustment of the geometric expansion rate of the modified target 121 adjusts the surface area of the modified target 121 as the modified target 121 interacts with the second radiation beam 115.

以此方式，可藉由控制經修改目標121之擴張率而增加或控制所產生之可用EUV光130之總量。詳言之，經修改目標121之大小及其擴張率取決於自第一輻射光束110施加至目標材料120之放射曝光量，該放射曝光量為由第一輻射光束110遞送至目標材料120之區域的能量之量。因此，可藉由維持或控制每單位面積遞送至目標材料120之能量之量來維持或控制經修改目標121之擴張率。遞送至目標材料120之能量之量取決於恰好在第一輻射光束110照射於該目標材料之表面上之前該第一輻射光束110之能量。 In this manner, the total amount of available EUV light 130 produced can be increased or controlled by controlling the rate of expansion of the modified target 121. In detail, the size of the modified target 121 and its expansion rate depend on the amount of radiation exposure applied from the first radiation beam 110 to the target material 120, which is the area delivered by the first radiation beam 110 to the target material 120. The amount of energy. Thus, the rate of expansion of the modified target 121 can be maintained or controlled by maintaining or controlling the amount of energy delivered to the target material 120 per unit area. The amount of energy delivered to the target material 120 depends on the energy of the first radiation beam 110 just prior to the first radiation beam 110 illuminating the surface of the target material.

第一輻射光束110中之脈衝之能量可藉由積分藉由快速光偵測器量測之雷射脈衝信號來判定。偵測器可為適於長波長紅外線(LWIR)輻射之光電磁(PEM)偵測器、用於量測近紅外線(IR)輻射之InGaAs二極體，或用於可見或近IR輻射之矽二極體。 The energy of the pulses in the first radiation beam 110 can be determined by integrating the laser pulse signal measured by the fast photodetector. The detector can be a photoelectromagnetic (PEM) detector suitable for long-wavelength infrared (LWIR) radiation, an InGaAs diode for measuring near-infrared (IR) radiation, or a visible or near-IR radiation. Diode.

經修改目標121之擴張率至少部分地取決於由目標材料120截取之第一輻射光束110之脈衝中的能量之量。在一假設基線設計中，假定目標材料120總是具有相同大小且被置放於經聚焦第一輻射光束110之腰部中。但實務上，目標材料120可具有相對於第一輻射光束110之光束腰之小但通常恆定的軸向位置偏移。若所有此等因素保持恆定，則控制經修改目標121之擴張率之一個因素為為了使第一輻射光束110之脈衝具有為幾奈秒至100奈秒之持續時間的該第一輻射光束之脈衝能量。可在第一輻射光束110之脈衝具有處於或低於100奈秒之持續時間的情況下控制經修改目標121之擴張率之另一因素為第一輻射光束110之瞬時峰值功率。若第一輻射光束110之脈衝具有較短(例如，大約數皮秒(ps))之持續時間，則其他因素可控制經修改目標121之擴張率，如下文所論述。 The rate of expansion of the modified target 121 depends, at least in part, on the amount of energy in the pulses of the first radiation beam 110 intercepted by the target material 120. In a hypothetical baseline design, it is assumed that the target material 120 is always of the same size and is placed in the waist of the focused first radiation beam 110. In practice, however, target material 120 may have a small but generally constant axial positional offset relative to the beam waist of first radiation beam 110. If all of these factors remain constant, one factor controlling the rate of expansion of the modified target 121 is that the pulse of the first radiation beam 110 has a pulse of the first radiation beam having a duration of a few nanoseconds to 100 nanoseconds. energy. Another factor that can control the rate of expansion of the modified target 121 with the pulse of the first radiation beam 110 having a duration of less than 100 nanoseconds is the instantaneous peak power of the first radiation beam 110. If the pulse of the first radiation beam 110 has a short (eg, large For a duration of approximately picoseconds (ps), other factors may control the rate of expansion of the modified target 121, as discussed below.

如圖1中所展示，光學源105(亦被稱作驅動源或驅動雷射)用以驅動雷射產生電漿(LPP)極紫外線(EUV)光源100。該光學源105產生提供至第一目標部位111之第一輻射光束110及提供至第二目標部位116之第二輻射光束115。第一輻射光束110及第二輻射光束115可為脈衝式放大光束。 As shown in FIG. 1, optical source 105 (also referred to as a drive source or drive laser) is used to drive a laser-generated plasma (LPP) extreme ultraviolet (EUV) source 100. The optical source 105 produces a first radiation beam 110 that is provided to the first target site 111 and a second radiation beam 115 that is provided to the second target site 116. The first radiation beam 110 and the second radiation beam 115 may be pulsed amplified beams.

第一目標部位111自目標材料供應系統125接收諸如錫之目標材料120。第一輻射光束110與目標材料120之間的相互作用將能量遞送至目標材料120以修改或改變其形狀(例如，使其形狀變形)使得目標材料120之幾何分佈變形成經修改目標121。通常自目標材料供應系統125沿著-X方向或沿著將目標材料120置放於第一目標部位111內之方向而導引目標材料120。在第一輻射光束110將能量遞送至目標材料120以使其變形成經修改目標121之後，經修改目標121可除了沿著另一方向(諸如平行於Z方向之方向)移動以外亦可繼續沿著-X方向移動。隨著經修改目標121移動遠離第一目標部位111，其幾何分佈繼續變形直至該經修改目標121到達第二目標部位116為止。第二輻射光束115與經修改目標121之間的相互作用(在第二目標部位116處)將該經修改目標121之至少部分轉換成電漿129，該電漿發射EUV光或輻射130。集光器系統(或集光器)135收集EUV光130且將EUV光130作為經收集EUV光140導引朝向諸如微影工具之光學裝置145。第一目標部位111及第二目標部位116以及集光器135可容納於腔室165內，腔室165提供適合於產生EUV光140之受控環境。 The first target site 111 receives a target material 120 such as tin from the target material supply system 125. The interaction between the first radiation beam 110 and the target material 120 delivers energy to the target material 120 to modify or change its shape (eg, deform its shape) such that the geometric distribution of the target material 120 deforms into the modified target 121. The target material 120 is typically directed from the target material supply system 125 in the -X direction or in a direction in which the target material 120 is placed within the first target portion 111. After the first radiation beam 110 delivers energy to the target material 120 to deform it into the modified target 121, the modified target 121 may continue along the other direction (such as in a direction parallel to the Z direction). Move in the -X direction. As the modified target 121 moves away from the first target portion 111, its geometric distribution continues to deform until the modified target 121 reaches the second target portion 116. The interaction between the second radiation beam 115 and the modified target 121 (at the second target location 116) converts at least a portion of the modified target 121 into a plasma 129 that emits EUV light or radiation 130. The concentrator system (or concentrator) 135 collects the EUV light 130 and directs the EUV light 130 as collected EUV light 140 toward an optical device 145, such as a lithography tool. The first target site 111 and the second target site 116 and the concentrator 135 can be housed within a chamber 165 that provides a controlled environment suitable for generating EUV light 140.

有可能在一些目標材料120與第一輻射光束110相互作用時將目標材料轉換成電漿，且因此此電漿有可能可發射EUV輻射。然而，第一輻射光束110之屬性經選擇及控制使得第一輻射光束110對目標材料 120之主要作用為變形或修改目標材料120之幾何分佈以形成經修改目標121。 It is possible to convert the target material into a plasma when some of the target material 120 interacts with the first radiation beam 110, and thus it is possible for this plasma to emit EUV radiation. However, the properties of the first radiation beam 110 are selected and controlled such that the first radiation beam 110 is directed to the target material. The primary role of 120 is to deform or modify the geometric distribution of target material 120 to form modified target 121.

第一輻射光束110及第二輻射光束115中之每一者係由光束遞送系統150導引朝向各別目標部位111、116。光束遞送系統150可包括若干光學操縱組件152及一聚焦總成156，該聚焦總成156將第一輻射光束110或第二輻射光束115聚焦至各別第一聚焦區及第二聚焦區。第一聚焦區及第二聚焦區可分別與第一目標部位111及第二目標部位116重疊。光學組件152可包括藉由折射及/或反射而導引輻射光束110、115之光學元件，諸如透鏡及/或鏡面。光束遞送系統150亦可包括控制及/或移動光學組件152之元件。舉例而言，光束遞送系統150可包括可控制以使光學組件152內之光學元件移動之致動器。 Each of the first radiation beam 110 and the second radiation beam 115 is directed by the beam delivery system 150 toward the respective target locations 111, 116. The beam delivery system 150 can include a number of optical steering components 152 and a focusing assembly 156 that focuses the first or second radiation beam 110 or 115 to respective first and second focal regions. The first focus area and the second focus area may overlap the first target portion 111 and the second target portion 116, respectively. Optical component 152 can include optical elements, such as lenses and/or mirrors, that direct radiation beams 110, 115 by refraction and/or reflection. Beam delivery system 150 may also include elements that control and/or move optical assembly 152. For example, beam delivery system 150 can include an actuator that can be controlled to move optical elements within optical assembly 152.

亦參看圖2，聚焦總成156聚焦第一輻射光束110使得第一輻射光束110之直徑D1在第一聚焦區210中處於最小值。換言之，聚焦總成156使第一輻射光束110在其在第一軸向方向212上朝向第一聚焦區210傳播時會聚，該第一軸向方向212為第一輻射光束110之一般傳播方向。第一軸向方向212沿著由X-Z軸界定之平面延伸。在此實例中，第一軸向方向212平行於或接***行於Z方向，但其可沿著相對於Z所成之一角度。在不存在目標材料120的情況下，第一輻射光束110在其在第一軸向方向212上傳播遠離第一聚焦區210時發散。 Referring also to FIG. 2, the focus assembly 156 focuses the first radiation beam 110 such that the diameter D1 of the first radiation beam 110 is at a minimum in the first focus region 210. In other words, the focusing assembly 156 causes the first radiation beam 110 to converge as it propagates in the first axial direction 212 toward the first focal region 210, which is the general direction of propagation of the first radiation beam 110. The first axial direction 212 extends along a plane defined by the X-Z axis. In this example, the first axial direction 212 is parallel or nearly parallel to the Z direction, but it may be at an angle relative to Z. In the absence of the target material 120, the first radiation beam 110 diverges as it travels away from the first focal region 210 in the first axial direction 212.

另外，聚焦總成156聚焦第二輻射光束115使得第二輻射光束115之直徑D2在第二聚焦區215中處於最小值。因此，聚焦總成使第二輻射光束115在其在第二軸向方向217上朝向第二聚焦區215傳播時會聚，該第二軸向方向217為第二輻射光束115之一般傳播方向。第二軸向方向217亦沿著由X-Z軸界定之平面延伸，且在此實例中，第二軸向方向217平行於或接***行於Z方向。在不存在經修改目標121的情況下，第二輻射光束115在其沿著第二軸向方向217傳播遠離第二聚焦區215時發散。 Additionally, the focus assembly 156 focuses the second radiation beam 115 such that the diameter D2 of the second radiation beam 115 is at a minimum in the second focus region 215. Thus, the focusing assembly converges the second radiation beam 115 as it propagates in the second axial direction 217 toward the second focal region 215, which is the general direction of propagation of the second radiation beam 115. The second axial direction 217 also extends along a plane defined by the X-Z axis, and in this example, the second axial direction 217 is parallel or nearly parallel to the Z direction. In the absence of the modified target 121, the second radiation beam 115 travels away from the second focus in its second axial direction 217 The area diverge at 215 hours.

如下文所論述，EUV光源100亦包括一或多個量測系統155、一控制系統160，及一光束調整系統180。控制系統160連接至光源100內之其他組件，諸如，量測系統155、光束遞送系統150、目標材料供應系統125、光束調整系統180及光學源105。量測系統155可量測光源100內之一或多個特性。舉例而言，一或多個特性可為與相對於第一輻射光束110之目標材料120或經修改目標121相關聯的特性。作為另一實例，一或多個特性可為經導引朝向目標材料120之第一輻射光束110之脈衝能量。將在下文更詳細地論述此等實例。控制系統160經組態以自量測系統接收一或多個經量測特性使得其可控制第一輻射光束110如何與目標材料120相互作用。舉例而言，控制系統160可經組態以將自第一輻射光束110遞送至目標材料120之能量之量維持在一預定能量範圍內。作為另一實例，控制系統160可經組態以控制自第一輻射光束110導引至目標材料120之能量之量。光束調整系統180為包括光學源105內之組件或包括調整光學源105內之組件以藉此控制第一輻射光束110之屬性(諸如，脈寬、脈衝能量、脈衝內之瞬時功率或脈衝內之平均功率)的組件之系統。 As discussed below, EUV light source 100 also includes one or more metrology systems 155, a control system 160, and a beam conditioning system 180. Control system 160 is coupled to other components within light source 100, such as metrology system 155, beam delivery system 150, target material supply system 125, beam conditioning system 180, and optical source 105. Measurement system 155 can measure one or more characteristics within light source 100. For example, one or more characteristics may be characteristics associated with target material 120 or modified target 121 relative to first radiation beam 110. As another example, one or more characteristics may be pulsed energy of the first radiation beam 110 directed toward the target material 120. These examples are discussed in more detail below. Control system 160 is configured to receive one or more measured characteristics from the metrology system such that it can control how first radiation beam 110 interacts with target material 120. For example, control system 160 can be configured to maintain the amount of energy delivered from first radiation beam 110 to target material 120 within a predetermined energy range. As another example, control system 160 can be configured to control the amount of energy directed from first radiation beam 110 to target material 120. The beam conditioning system 180 is comprised of components within the optical source 105 or includes components within the adjustment optical source 105 to thereby control the properties of the first radiation beam 110 (such as pulse width, pulse energy, instantaneous power within the pulse, or within the pulse) The system of components of average power).

參看圖3A，在一些實施中，光學源105包括：第一光學放大器系統300，其包括第一輻射光束110傳遞通過之一系列一或多個光學放大器；及第二光學放大器系統305，其包括第二輻射光束115傳遞通過之一系列一或多個光學放大器。來自第一系統300之一或多個放大器可處於第二系統305中；或第二系統305中之一或多個放大器可處於第一系統300中。替代地，有可能將第一光學放大器系統300與第二光學放大器系統305完全分離。 Referring to FIG. 3A, in some implementations, optical source 105 includes a first optical amplifier system 300 that includes a first radiation beam 110 that passes through a series of one or more optical amplifiers, and a second optical amplifier system 305 that includes The second radiation beam 115 is passed through a series of one or more optical amplifiers. One or more amplifiers from the first system 300 may be in the second system 305; or one or more of the amplifiers in the second system 305 may be in the first system 300. Alternatively, it is possible to completely separate the first optical amplifier system 300 from the second optical amplifier system 305.

另外，儘管不需要，光學源105仍可包括產生第一脈衝光束311之第一光產生器310及產生第二脈衝光束316之第二光產生器315。光產生器310、315可各自為(例如)雷射、諸如主控振盪器之種子雷射，或燈。可用作光產生器310、315之例示性光產生器為可在為(例如)100kHz之重複率下操作之Q切換、射頻(RF)泵浦、軸流、二氧化碳(CO₂)振盪器。 Additionally, although not required, the optical source 105 can include a first light generator 310 that produces a first pulsed beam 311 and a second light generator 315 that produces a second pulsed beam 316. The light generators 310, 315 can each be, for example, a laser, a seed laser such as a master oscillator, or a lamp. Exemplary useful light generating devices 310, 315 of the light generator is to be (e.g.) Q operating the repetition rate of 100kHz switching frequency (RF) pump, axial flow, carbon dioxide (CO ₂₎ oscillator.

光學放大器系統300、305內之光學放大器各自在來自各別光產生器310、315之光束311、316傳播所沿著的各別光束路徑上含有增益介質。當激發光學放大器之增益介質時，該增益介質將光子提供至光束、放大光束311、316以產生經放大光束，經放大光束形成第一輻射光束110或第二輻射光束115。 The optical amplifiers within the optical amplifier systems 300, 305 each contain a gain medium on each of the individual beam paths along which the beams 311, 316 from the respective light generators 310, 315 propagate. When the gain medium of the optical amplifier is excited, the gain medium supplies photons to the beam, amplifies the beams 311, 316 to produce an amplified beam, and the amplified beam forms a first or second radiation beam 110 or 115.

光束311、316之波長或輻射光束110、115之波長可彼此不同，使得輻射光束110、115在其經組合於光學源105內之任何點處的情況下可彼此分離。若輻射光束110、115係由CO₂放大器產生，則第一輻射光束110可具有為10.26微米(μm)或10.207微米之波長，且第二輻射光束115可具有為10.59微米之波長。該等波長經選擇為較容易實現使用色散光學件或雙向色鏡或光束***器塗層進行之兩個輻射光束110、115之分離。在輻射光束110、115兩者一起傳播於同一放大器鏈中之情形(例如，光學放大器系統300之一些放大器處於光學放大器系統305中之情形)下，則相異波長可用以調整該兩個輻射光束110、115之間的相對增益(儘管該兩個輻射光束110、115橫穿過相同放大器)。 The wavelengths of the beams 311, 316 or the wavelengths of the radiation beams 110, 115 may be different from each other such that the radiation beams 110, 115 may be separated from one another if they are combined at any point within the optical source 105. If the radiation beam produced by the CO ₂ line 110, 115 amplifier, the first radiation beam 110 may have a 10.26 micrometers ([mu] m) or 10.207 microns wavelength, and the second radiation beam 115 may have a wavelength of 10.59 microns. The wavelengths are selected to facilitate separation of the two radiation beams 110, 115 using a dispersive optic or a bidirectional color mirror or beam splitter coating. Where the radiation beams 110, 115 are both propagating together in the same amplifier chain (eg, where some of the amplifiers of the optical amplifier system 300 are in the optical amplifier system 305), the different wavelengths can be used to adjust the two radiation beams. The relative gain between 110, 115 (although the two radiation beams 110, 115 traverse the same amplifier).

舉例而言，輻射光束110、115一旦經分離就可經操縱或聚焦至腔室165內之兩個分離部位(諸如分別為第一目標部位111及第二目標部位116)。詳言之，輻射光束110、115之分離亦使經修改目標121能夠在第一輻射光束110自第一目標部位111行進至第二目標部位116時與該第一輻射光束110相互作用之後擴張。 For example, the radiation beams 110, 115, once separated, can be manipulated or focused to two separate locations within the chamber 165 (such as the first target portion 111 and the second target portion 116, respectively). In particular, the separation of the radiation beams 110, 115 also enables the modified target 121 to expand after interacting with the first radiation beam 110 as the first radiation beam 110 travels from the first target site 111 to the second target site 116.

光學源105可包括光束路徑組合器325，光束路徑組合器325將第一輻射光束110與第二輻射光束115疊對且將該等輻射光束110、115置放於針對光學源105與光束遞送系統150之間的距離中之至少一些之同一光學路徑上。圖3B中展示例示性光束路徑組合器325。光束路徑組合器325包括一對雙向色光束***器340、342及一對鏡面344、346。雙向色光束***器340使第一輻射光束110能夠沿著通向雙向色光束***器342之第一路徑傳遞通過。雙向色光束***器340將第二輻射光束115沿著第二路徑反射，其中第二輻射光束115係自鏡面344、346反射，該等鏡面將第二輻射光束115重新導引朝向雙向色光束***器342。第一輻射光束110自由地通過雙向色光束***器342而傳遞至輸出路徑上，而第二輻射光束115自雙向色光束***器342反射至該輸出路徑上使得第一輻射光束110及第二輻射光束115兩者在該輸出路徑上疊對。 The optical source 105 can include a beam path combiner 325 that overlays the first radiation beam 110 with the second radiation beam 115 and places the radiation beams 110, 115 Placed on the same optical path for at least some of the distance between optical source 105 and beam delivery system 150. An exemplary beam path combiner 325 is shown in FIG. 3B. Beam path combiner 325 includes a pair of bidirectional color beam splitters 340, 342 and a pair of mirrors 344, 346. The bidirectional color beam splitter 340 enables the first radiation beam 110 to pass along a first path to the bidirectional color beam splitter 342. The bidirectional color beam splitter 340 reflects the second radiation beam 115 along a second path, wherein the second radiation beam 115 is reflected from the mirrors 344, 346, which redirect the second radiation beam 115 toward the bidirectional color beam splitting 342. The first radiation beam 110 is freely transmitted through the bidirectional color beam splitter 342 to the output path, and the second radiation beam 115 is reflected from the bidirectional color beam splitter 342 onto the output path such that the first radiation beam 110 and the second radiation Both beams 115 are superposed on the output path.

另外，光學源105可包括光束路徑分離器326，光束路徑分離器326將第一輻射光束110與第二輻射光束115分離使得該兩個輻射光束110、115可分離地經操縱及聚焦於腔室165內。圖3C中展示例示性光束路徑分離器326。光束路徑分離器326包括一對雙向色光束***器350、352及一對鏡面354、356。雙向色光束***器350接收該經疊對對之輻射光束110、115、將第二輻射光束115沿著第二路徑反射，且將第一輻射光束110沿著第一路徑透射朝向雙向色光束***器352。第一輻射光束110沿著第一路徑自由地傳遞通過雙向色光束***器352。第二輻射光束115自鏡面354、356反射且返回至雙向色光束***器352，其中其經反射至相異於第一路徑之第二路徑上。 Additionally, optical source 105 can include a beam path separator 326 that separates first radiation beam 110 from second radiation beam 115 such that the two radiation beams 110, 115 are separately manipulated and focused on the chamber Within 165. An exemplary beam path separator 326 is shown in FIG. 3C. Beam path separator 326 includes a pair of bidirectional color beam splitters 350, 352 and a pair of mirrors 354, 356. The bidirectional color beam splitter 350 receives the pair of pairs of radiation beams 110, 115, reflects the second radiation beam 115 along the second path, and transmits the first radiation beam 110 along the first path toward the bidirectional color beam splitting 352. The first radiation beam 110 is freely transmitted through the bidirectional color beam splitter 352 along the first path. The second radiation beam 115 reflects from the mirrors 354, 356 and returns to the bidirectional color beam splitter 352 where it is reflected onto a second path that is distinct from the first path.

另外，第一輻射光束110可經組態為具有比第二輻射光束115之脈衝能量更少的脈衝能量。此係因為第一輻射光束110用以修改目標材料120之幾何形狀，而第二輻射光束115用以將經修改目標121轉換成電漿129。舉例而言，第一輻射光束110之脈衝能量可小達第二輻射光束115之脈衝能量1/5至1/100。 Additionally, the first radiation beam 110 can be configured to have less pulse energy than the pulse energy of the second radiation beam 115. This is because the first radiation beam 110 is used to modify the geometry of the target material 120, and the second radiation beam 115 is used to convert the modified target 121 into a plasma 129. For example, the pulse energy of the first radiation beam 110 can be as small as 1/5 to 1/100 of the pulse energy of the second radiation beam 115.

在如圖4A及圖4B中所展示之一些實施中，光學放大器系統300或305分別包括一組三個光學放大器401、402、403及406、407、408，但可使用少至一個放大器或多於三個放大器。在一些實施中，光學放大器406、407、408中之每一者包括一增益介質，該增益介質包括CO₂；且可在大於1000之增益下放大處於約9.1微米與約11.0微米之間且特別處於約10.6微米的波長之光。有可能以相似方式或在不同波長下操作光學放大器401、402、403。用於光學放大器系統300、305中之合適放大器及雷射可包括脈衝式雷射器件，諸如(例如)運用在相對高功率(例如，10kW或更高)及高脈衝重複率(例如，50kHz或更大)下操作的DC或RF激發產生處於約9.3微米或約10.6微米之輻射的脈衝式氣體放電CO₂放大器。例示性光學放大器401、402、403或406、407、408為運用無磨損氣體循環及電容性RF激發之軸流高功率CO₂雷射，諸如由康乃狄格州法明頓之TRUMPF公司生產的TruFlow CO₂雷射。 In some implementations as shown in Figures 4A and 4B, optical amplifier system 300 or 305 includes a set of three optical amplifiers 401, 402, 403 and 406, 407, 408, respectively, but can use as few as one amplifier or more For three amplifiers. In some implementations, each of the optical amplifiers 406, 407, 408 includes a gain medium that includes CO ₂ ; and can be amplified between about 9.1 microns and about 11.0 microns at a gain greater than 1000 and Light at a wavelength of about 10.6 microns. It is possible to operate the optical amplifiers 401, 402, 403 in a similar manner or at different wavelengths. Suitable amplifiers and lasers for use in optical amplifier systems 300, 305 can include pulsed laser devices such as, for example, for use at relatively high power (eg, 10 kW or higher) and high pulse repetition rates (eg, 50 kHz or The larger operating DC or RF excitation produces a pulsed gas discharge CO ₂ amplifier at about 9.3 microns or about 10.6 microns. Exemplary optical amplifiers 401, 402, 403 or 406, 407, 408 are axial flow high power CO ₂ lasers that utilize wear-free gas cycling and capacitive RF excitation, such as TruFlow, manufactured by TRUMPF, Inc., Farmington, Connecticut. CO ₂ laser.

另外，儘管不需要，光學放大器系統300及305中之一或多者仍可包括分別充當前置放大器411、421之第一放大器。前置放大器411、421(若存在)可為經擴散冷卻之CO₂雷射系統，諸如由康乃狄格州法明頓之TRUMPF公司生產的TruCoax CO₂雷射系統。 Additionally, although not required, one or more of optical amplifier systems 300 and 305 can include first amplifiers that respectively charge current amplifiers 411, 421. Preamplifiers 411, 421 (if present) may be a diffusion cooled laser system ₂ via the CO, such as produced by Connecticut TRUMPF Company of Farmington TruCoax CO ₂ laser system.

光學放大器系統300、305可包括未展示於圖4A及圖4B中的用於導引及塑形各別光束311、316之光學元件。舉例而言，光學放大器系統300、305可包括反射光學件(諸如，鏡面)、部分透射光學件(諸如，光束***器或部分透射鏡面)，及雙向色光束***器。 The optical amplifier system 300, 305 can include optical components for guiding and shaping the respective beams 311, 316 that are not shown in Figures 4A and 4B. For example, optical amplifier system 300, 305 can include reflective optics (such as a mirror), partially transmissive optics (such as a beam splitter or partially transmissive mirror), and a bidirectional color beam splitter.

光學源105亦包括光學系統320，光學系統320可包括用於將光束311、316導引通過光學源105之一或多個光學件(諸如，反射光學件(諸如鏡面)、部分反射光學件及部分透射光學件(諸如光束***器)、折射光學件(諸如稜鏡或透鏡)、被動光學件、主動光學件等等)。 Optical source 105 also includes an optical system 320 that can include one or more optical members (such as reflective optics (such as mirrors), partially reflective optics, and one or more optics for directing light beams 311, 316 through optical source 105 Partially transmissive optics (such as beam splitters), refractive optics (such as helium or lenses), passive optics, active optics, and the like).

儘管光學放大器401、402、403及406、407、408被展示為分離區塊，但該等放大器401、402、403中之至少一者有可能處於光學放大器系統305中且該等放大器406、407、408中之至少一者有可能處於光學放大器系統300中。舉例而言，如圖5中所展示，放大器402、403對應於各別放大器407、408，且光學放大器系統300、305包括額外光學元件500(諸如光束路徑組合器325)，該光學元件500用於將自放大器401、406輸出之兩個光束組合至穿過放大器402/407及放大器403/408之單一路徑中。在光學放大器系統300、305之間放大器中之至少一些與光學件重疊之此系統中，有可能使第一輻射光束110及第二輻射光束115耦合在一起使得第一輻射光束110之一或多個特性之改變可造成第二輻射光束115之一或多個特性之改變，且反之亦然。因此，變得更重要的是控制系統內之能量，諸如，第一輻射光束110之能量或遞送至目標材料120之能量。另外，光學放大器系統300、305亦包括光學元件505(諸如光束路徑分離器326)，光學元件505用於分離自放大器403/408輸出之兩個光束110、15以使該兩個光束110、115能夠經導引至各別目標部位111、116。 Although optical amplifiers 401, 402, 403 and 406, 407, 408 are shown as separate blocks, at least one of the amplifiers 401, 402, 403 is likely to be in optical amplifier system 305 and the amplifiers 406, 407 At least one of 408 may be in optical amplifier system 300. For example, as shown in FIG. 5, amplifiers 402, 403 correspond to respective amplifiers 407, 408, and optical amplifier systems 300, 305 include additional optical components 500 (such as beam path combiner 325) for optical component 500 The two beams output from the amplifiers 401, 406 are combined into a single path through the amplifiers 402/407 and amplifiers 403/408. In such a system in which at least some of the amplifiers between the optical amplifier systems 300, 305 overlap the optics, it is possible to couple the first radiation beam 110 and the second radiation beam 115 together such that one or more of the first radiation beams 110 A change in one characteristic can result in a change in one or more characteristics of the second radiation beam 115, and vice versa. Therefore, it becomes more important to control the energy within the system, such as the energy of the first radiation beam 110 or the energy delivered to the target material 120. In addition, optical amplifier system 300, 305 also includes an optical component 505 (such as beam path separator 326) for separating the two beams 110, 15 output from amplifiers 403/408 such that the two beams 110, 115 It can be guided to the respective target sites 111, 116.

目標材料120可為包括當轉換成電漿時發射EUV光之目標材料的任何材料。目標材料120可為包括目標物質及雜質(諸如，非目標粒子)之目標混合物。目標物質為可轉換成具有在EUV範圍之發射譜線之電漿狀態的物質。目標物質可為(例如)液體或熔融金屬之小滴、液體串流之一部分、固體粒子或叢集、液滴內所含有之固體粒子、目標材料之發泡體，或液體串流之一部分內所含有之固體粒子。目標物質可為(例如)水、錫、鋰、氙，或當轉換成電漿狀態時具有在EUV範圍之發射譜線的任何材料。舉例而言，目標物質可為元素錫，其可用作純錫(Sn)；用作錫化合物，例如，SnBr₄、SnBr₂、SnH₄；用作錫合金，例如，錫-鎵合金、錫-銦合金、錫-銦-鎵合金，或此等合金之任何組合。此外，在不存在雜質之情形下，目標材料僅包括目標物質。以下之論述提供目標材料120為由諸如錫之熔融金屬製成的小滴之實例。然而，目標材料120可採取其他形式。 Target material 120 can be any material that includes a target material that emits EUV light when converted to a plasma. The target material 120 can be a target mixture including a target substance and impurities such as non-target particles. The target substance is a substance that can be converted into a plasma state having an emission line in the EUV range. The target substance may be, for example, a droplet of a liquid or molten metal, a part of a liquid stream, a solid particle or cluster, a solid particle contained in the droplet, a foam of a target material, or a part of a liquid stream. Contains solid particles. The target substance can be, for example, water, tin, lithium, cesium, or any material having an emission line in the EUV range when converted to a plasma state. For example, the target substance may be elemental tin, which can be used as pure tin (of Sn); as tin compounds, _{_{e.g., SnBr 4, SnBr 2, SnH}} 4; as a tin alloy, for example, tin - gallium alloy, tin Indium alloy, tin-indium-gallium alloy, or any combination of such alloys. Further, in the absence of impurities, the target material includes only the target substance. The following discussion provides an example in which the target material 120 is a droplet made of molten metal such as tin. However, the target material 120 can take other forms.

可藉由將熔融目標材料傳遞通過目標材料供應裝置125之噴嘴且允許目標材料120漂移至第一目標部位111中而將目標材料120提供至第一目標部位111。在一些實施中，可藉由力將目標材料120導引至第一目標部位111。 The target material 120 may be provided to the first target site 111 by passing the molten target material through the nozzle of the target material supply device 125 and allowing the target material 120 to drift into the first target site 111. In some implementations, the target material 120 can be directed to the first target site 111 by force.

在目標材料120到達第二目標部位116之前藉由運用來自第一輻射光束110之輻射脈衝輻照目標材料120而改變或修改目標材料120之形狀(例如，使目標材料120之形狀變形)。 The shape of the target material 120 (eg, deforming the shape of the target material 120) is altered or modified by irradiating the target material 120 with radiation pulses from the first radiation beam 110 before the target material 120 reaches the second target site 116.

第一輻射光束110與目標材料120之間的相互作用造成材料自目標材料120(及經修改目標121)之表面剝蝕，且此剝蝕提供使目標材料120變形成經修改目標121之力，該經修改目標121具有不同於目標材料120之形狀的形狀。舉例而言，目標材料120可具有相似於小滴之形狀，而經修改目標121之形狀變形使得在該經修改目標121到達第二目標部位116時其形狀更接近圓盤之形狀(諸如盤餅形狀)。經修改目標121可為未經離子化之材料(不為電漿之材料)或最低限度地經離子化之材料。經修改目標121可為(例如)液體或熔融金屬之圓盤、不具有空隙或相當大間隙之目標材料之連續片段、微離子或毫微粒子之霧狀物，或原子蒸汽之雲狀物。舉例而言，如圖2中所展示，經修改目標121在約時間T2-T1(其可為大約數微秒(μs))之後在第二目標部位116內擴張成熔融金屬之圓盤形片件121。 The interaction between the first radiation beam 110 and the target material 120 causes the material to erode from the surface of the target material 120 (and modified target 121), and this ablation provides the force that causes the target material 120 to deform into the modified target 121. The modification target 121 has a shape different from the shape of the target material 120. For example, the target material 120 can have a shape similar to a droplet, and the shape of the modified target 121 is deformed such that when the modified target 121 reaches the second target portion 116, its shape is closer to the shape of the disk (such as a pancake). shape). The modified target 121 can be a material that is not ionized (not a material of the plasma) or a material that is minimally ionized. The modified target 121 can be, for example, a disk of liquid or molten metal, a continuous segment of the target material without voids or substantial gaps, a mist of micro-ions or nanoparticles, or a cloud of atomic vapor. For example, as shown in FIG. 2, the modified target 121 expands into a disk of molten metal in the second target portion 116 after about time T2-T1 (which may be on the order of a few microseconds (μs)). Item 121.

另外，使材料自目標材料120(及經修改目標121)之表面剝蝕的介於第一輻射光束110與目標材料120之間的相互作用可提供力，該力可使經修改目標121沿著Z方向獲取某一推進力或速度。經修改目標121在X方向上之擴張以及在Z方向上之所獲取速度取決於第一輻射光束 110之能量，且特別取決於遞送至目標材料120(亦即，由目標材料120截取)之能量。 Additionally, the interaction between the first radiation beam 110 and the target material 120 that ablate the material from the surface of the target material 120 (and modified target 121) can provide a force that can cause the modified target 121 to follow the Z Get a certain propulsion or speed in the direction. The expansion of the modified target 121 in the X direction and the speed of acquisition in the Z direction depend on the first radiation beam The energy of 110, and in particular depends on the energy delivered to the target material 120 (i.e., intercepted by the target material 120).

舉例而言，對於恆定目標材料120大小及對於第一輻射光束110之長脈衝(長脈衝為具有幾奈秒(ns)與100奈秒之間的持續時間之脈衝)，則擴張率與第一輻射光束110之每單位面積能量(焦耳/平方公分)成線性比例。每單位面積能量亦被稱作放射曝光量或通量。放射曝光量為每單位面積由目標材料120之表面接收之放射能量，或等效地為遍及目標材料120經輻照之時間而積分的目標材料120之表面之輻照度。 For example, for a constant target material 120 size and a long pulse for the first radiation beam 110 (a long pulse is a pulse having a duration between a few nanoseconds (ns) and 100 nanoseconds), then the expansion rate is first The energy per unit area (joules per square centimeter) of the radiation beam 110 is linearly proportional. Energy per unit area is also referred to as radiation exposure or flux. The amount of radiation exposure is the amount of radiation received by the surface of the target material 120 per unit area, or equivalently the irradiance of the surface of the target material 120 integrated over the time the target material 120 is irradiated.

作為另一實例，對於恆定目標材料120大小及對於短脈衝(具有小於幾百皮秒(ps)之持續時間之脈衝)，則擴張率與第一輻射光束110之能量之間的關係可不同。在此體系中，使較短脈衝持續時間與第一輻射光束110之強度增加相關，第一輻射光束110與目標材料120相互作用，且該第一輻射光束110表現得像衝擊波。在此體系中，擴張率主要取決於第一輻射光束110之強度I，且該強度等於第一輻射光束之能量E除以與目標材料120相互作用的第一輻射光束110之光點大小(橫截面積A)與脈衝持續時間(τ)，或I=E/(A．τ)。在此皮秒-脈衝持續時間體系中，經修改目標121擴張以便形成霧狀物。 As another example, for a constant target material 120 size and for short pulses (pulses having a duration of less than a few hundred picoseconds (ps)), the relationship between the expansion rate and the energy of the first radiation beam 110 can be different. In this system, the shorter pulse duration is associated with an increase in the intensity of the first radiation beam 110, the first radiation beam 110 interacts with the target material 120, and the first radiation beam 110 behaves like a shock wave. In this system, the rate of expansion is primarily dependent on the intensity I of the first radiation beam 110, and the intensity is equal to the energy E of the first radiation beam divided by the spot size of the first radiation beam 110 that interacts with the target material 120 (horizontal The cross-sectional area A) is related to the pulse duration (τ), or I=E/(A.τ). In this picosecond-pulse duration system, the modified target 121 is expanded to form a mist.

另外，經修改目標121之圓盤形狀之角度定向(相對於Z方向或X方向之角度)取決於第一輻射光束110在其撞擊目標材料120時之位置。因此，若第一輻射光束110撞擊目標材料120使得第一輻射光束110涵蓋該目標材料且第一輻射光束110之光束腰以該目標材料120為中心，則更可能的是，經修改目標121之圓盤形狀將與其平行於X方向之長軸230及其平行於Z方向之短軸235對準。 Additionally, the angular orientation of the disk shape of the modified target 121 (the angle with respect to the Z or X direction) depends on the position of the first radiation beam 110 as it strikes the target material 120. Therefore, if the first radiation beam 110 strikes the target material 120 such that the first radiation beam 110 covers the target material and the beam waist of the first radiation beam 110 is centered on the target material 120, it is more likely that the modified target 121 The disc shape will be aligned with its long axis 230 parallel to the X direction and its minor axis 235 parallel to the Z direction.

第一輻射光束110係由輻射脈衝組成，且每一脈衝可具有一持續時間。相似地，第二輻射光束115係由輻射脈衝組成，且每一脈衝可具有一持續時間。脈衝持續時間可由某一百分比高(例如，半高)寬表示，亦即，脈衝之強度為脈衝之最大強度之至少百分比的時間量。然而，其他度量可用以判定脈衝持續時間。第一輻射光束110內之脈衝之脈衝持續時間可為(例如)30奈秒(ns)、60奈秒、130奈秒、50奈秒至250奈秒、10皮秒至200皮秒(ps)，或小於1奈秒。第一輻射光束110之能量可為(例如)1毫焦耳(mJ)至100毫焦耳(mJ)。第一輻射光束110之波長可為(例如)1.06微米、1微米至10.6微米、10.59微米或10.26微米。 The first radiation beam 110 is comprised of radiation pulses and each pulse can have a duration. Similarly, the second radiation beam 115 is comprised of radiation pulses and each pulse can have a duration. The pulse duration can be a certain percentage high (for example, half height) wide table That is, the intensity of the pulse is the amount of time that is at least a percentage of the maximum intensity of the pulse. However, other metrics can be used to determine the pulse duration. The pulse duration of the pulses within the first radiation beam 110 can be, for example, 30 nanoseconds (ns), 60 nanoseconds, 130 nanoseconds, 50 nanoseconds to 250 nanoseconds, and 10 picoseconds to 200 picoseconds (ps). , or less than 1 nanosecond. The energy of the first radiation beam 110 can be, for example, 1 millijoule (mJ) to 100 millijoules (mJ). The wavelength of the first radiation beam 110 can be, for example, 1.06 microns, 1 micron to 10.6 microns, 10.59 microns, or 10.26 microns.

如上文所論述，經修改目標121之擴張率取決於截取目標材料120之第一輻射光束110之放射曝光量(每單位面積能量)。因此，對於具有約60奈秒之持續時間及約50毫焦能量之第一輻射光束110之脈衝，實際放射曝光量取決於第一輻射光束110聚焦於第一聚焦區210處之嚴格程度。在一些實例中，目標材料120處之放射曝光量可為約400焦耳/平方公分至700焦耳/平方公分。然而，放射曝光量對目標材料120相對於第一輻射光束110之部位極敏感。 As discussed above, the rate of expansion of the modified target 121 depends on the amount of radiation exposure (energy per unit area) of the first radiation beam 110 that intercepts the target material 120. Thus, for a pulse of the first radiation beam 110 having a duration of about 60 nanoseconds and an energy of about 50 millijoules, the actual amount of radiation exposure depends on the degree of stringency at which the first radiation beam 110 is focused at the first focal region 210. In some examples, the amount of radiation exposure at the target material 120 can range from about 400 Joules per square centimeter to 700 Joules per square centimeter. However, the amount of radiation exposure is extremely sensitive to the location of the target material 120 relative to the first radiation beam 110.

第二輻射光束115可被稱作主光束且其由以一重複率釋放之脈衝組成。第二輻射光束115具有足夠能量以將經修改目標121內之目標物質轉換成發射EUV光130之電漿。第一輻射光束110之脈衝及第二輻射光束115之脈衝在時間上分離一延遲時間，諸如1微秒至3微秒(μs)、1.3微秒、1微秒至2.7微秒、3微秒至4微秒，或允許經修改目標121擴張成圖2中所展示之具所要大小的圓盤形狀之任何時間量。因此，當經修改目標121在X-Y平面中擴張及伸長時，經修改目標121經歷二維擴張。 The second radiation beam 115 can be referred to as a main beam and it consists of pulses that are released at a repetition rate. The second radiation beam 115 has sufficient energy to convert the target species within the modified target 121 into a plasma that emits EUV light 130. The pulse of the first radiation beam 110 and the pulse of the second radiation beam 115 are separated in time by a delay time, such as 1 microsecond to 3 microseconds (μs), 1.3 microseconds, 1 microsecond to 2.7 microseconds, 3 microseconds. Up to 4 microseconds, or any amount of time that allows the modified target 121 to expand into the shape of the disc of the desired size as shown in FIG. Therefore, when the modified target 121 is expanded and elongated in the X-Y plane, the modified target 121 undergoes two-dimensional expansion.

第二輻射光束115可經組態成使得其在其撞擊經修改目標121時稍微散焦。圖2中展示此散焦方案。在此狀況下，第二聚焦區215處於沿著Z方向之與經修改目標121之長軸230不同的部位；此外，第二聚焦區215在第二目標部位116外部。在此方案中，將第二聚焦區215沿著Z 方向置放於經修改目標121之前。亦即，第二輻射光束115在第二輻射光束115撞擊經修改目標121之前達到聚焦(或光束腰)。其他散焦方案係可能的。舉例而言，如圖6中所展示，將第二聚焦區215沿著Z方向置放於經修改目標121之後。以此方式，第二輻射光束115在第二輻射光束115撞擊經修改目標121之後達到聚焦(或光束腰)。 The second radiation beam 115 can be configured such that it is slightly defocused when it strikes the modified target 121. This defocusing scheme is shown in Figure 2. In this case, the second focus area 215 is at a portion different from the long axis 230 of the modified target 121 along the Z direction; further, the second focus area 215 is outside the second target portion 116. In this scenario, the second focus area 215 is along the Z The direction is placed before the modified target 121. That is, the second radiation beam 115 reaches a focus (or beam waist) before the second radiation beam 115 strikes the modified target 121. Other defocusing schemes are possible. For example, as shown in FIG. 6, the second focus area 215 is placed after the modified target 121 along the Z direction. In this manner, the second radiation beam 115 reaches a focus (or beam waist) after the second radiation beam 115 strikes the modified target 121.

再次參看圖2，經修改目標121在其自第一目標部位111移動(例如，飄移)至第二目標部位116時擴張之速率可被稱作擴張率(ER)。在第一目標部位111處，恰好在時間T1時目標材料120由第一輻射光束110撞擊之後，經修改目標121就具有沿著長軸230所截留之範圍(或長度)S1。在經修改目標121在時間T2時到達第二目標部位116時，該經修改目標121具有沿著長軸230所截留之範圍S2。擴張率為沿著長軸230所截留之經修改目標121之範圍之差(S2-S1)除以時間差(T2-T1)，因此： Referring again to FIG. 2, the rate at which the modified target 121 expands as it moves (eg, drifts) from the first target site 111 to the second target site 116 can be referred to as the expansion rate (ER). At the first target site 111, just after the target material 120 is struck by the first radiation beam 110 at time T1, the modified target 121 has a range (or length) S1 that is trapped along the long axis 230. When the modified target 121 reaches the second target portion 116 at time T2, the modified target 121 has a range S2 that is intercepted along the long axis 230. The expansion rate is the difference (S2-S1) of the range of the modified target 121 intercepted along the long axis 230 divided by the time difference (T2-T1), thus:

儘管經修改目標121沿著長軸230擴張，但亦有可能使經修改目標121沿著短軸235壓縮或薄化。 Although the modified target 121 expands along the long axis 230, it is also possible to compress or thin the modified target 121 along the minor axis 235.

上文所論述之二步法途徑導致為約3%至4%之轉換效率，在該途徑中經修改目標121係藉由將第一輻射光束110與目標材料120相互作用而形成，且接著藉由將經修改目標121與第二輻射光束115相互作用而將該經修改目標121轉換成電漿。一般而言，需要增加來自光學源105之光至EUV輻射130之轉換率，此係因為過低轉換效率可需要增加光學源105需要遞送之功率之量，此情形增加操作光學源105之成本且亦增加對光源100內之所有組件之熱負荷，且可導致在容納第一目標部位111及第二目標部位116之腔室內之碎屑產生增加。轉換效率之增加可幫助符合對高容量製造工具之要求且同時將光學源功率要求保持在可接受限度內。各種參數影響轉換效率，諸如，第一輻射光束110及第二輻射光束115之波長、目標材料120，以及輻射光束110、115之脈衝形狀、能量、功率及強度。轉換效率可被定義為由EUV光130產生之EUV能量除2π立體角及圍繞用於集光器系統135以及光學裝置145中之照明及投影光學件中之任一者或兩者中的(多層)鏡面之反射率曲線之中心波長之2%頻寬，除以第二輻射光束115之輻照脈衝之能量。在一項實例中，反射率曲線之中心波長為13.5奈米(nm)。 The two-step approach discussed above results in a conversion efficiency of about 3% to 4%, in which modified target 121 is formed by interacting first radiation beam 110 with target material 120, and then borrowing The modified target 121 is converted into a plasma by interacting the modified target 121 with the second radiation beam 115. In general, there is a need to increase the conversion rate of light from optical source 105 to EUV radiation 130, as excessive conversion efficiency may require an increase in the amount of power that optical source 105 needs to deliver, which increases the cost of operating optical source 105 and The thermal load on all components within the light source 100 is also increased and may result in increased debris generation in the chamber containing the first target portion 111 and the second target portion 116. Increased conversion efficiency helps meet the requirements for high-volume manufacturing tools while maintaining optical source power requirements Within acceptable limits. Various parameters affect the conversion efficiency, such as the wavelengths of the first and second radiation beams 110, 115, the target material 120, and the pulse shape, energy, power, and intensity of the radiation beams 110, 115. The conversion efficiency can be defined as the EUV energy generated by the EUV light 130 divided by a 2π solid angle and surrounding either or both of the illumination and projection optics used in the concentrator system 135 and the optical device 145 (multilayer The 2% bandwidth of the center wavelength of the specular reflectance curve is divided by the energy of the irradiation pulse of the second radiation beam 115. In one example, the center wavelength of the reflectance curve is 13.5 nanometers (nm).

用以增加、維持或最佳化轉換效率之一種方式應為控制EUV光130之能量或使EUV光130之能量穩定，且為了進行此操作，變得重要的是將經修改目標121之擴張率(與其他參數)維持在值之可接受範圍內。藉由維持自第一輻射光束110在目標材料120上之放射曝光量而將經修改目標121之擴張率維持在值之可接受範圍內。且，可基於與相對於第一輻射光束110之目標材料120或經修改目標121相關聯之一或多個經量測特性來維持放射曝光量。放射曝光量為每單位面積由目標材料120之表面接收之放射能量。因此，可將放射曝光量估計或近似為在目標材料120之區域在脈衝間保持恆定的情況下導引朝向該目標材料120之表面的能量之量。 One way to increase, maintain, or optimize conversion efficiency should be to control the energy of the EUV light 130 or to stabilize the energy of the EUV light 130, and to do so, it is important to increase the expansion rate of the modified target 121. (with other parameters) maintained within an acceptable range of values. The rate of expansion of the modified target 121 is maintained within an acceptable range of values by maintaining the amount of radiation exposure from the first radiation beam 110 on the target material 120. Moreover, the amount of radiation exposure may be maintained based on one or more measured characteristics associated with target material 120 or modified target 121 relative to first radiation beam 110. The amount of radiation exposure is the amount of radiation energy received by the surface of the target material 120 per unit area. Thus, the amount of radiation exposure can be estimated or approximated as the amount of energy directed toward the surface of the target material 120 with the region of the target material 120 remaining constant between pulses.

存在用以將經修改目標121之擴張率維持在值之可接受範圍內之不同方法或技術。且，所使用之方法或技術可取決於與第一輻射光束110相關聯之某些屬性。轉換效率亦受到其他參數影響，諸如，目標材料120之大小或厚度、目標材料120相對於第一聚焦區210之位置，或目標材料120相對於x-y平面之角度。 There are different methods or techniques for maintaining the rate of expansion of the modified target 121 within an acceptable range of values. Moreover, the method or technique used may depend on certain attributes associated with the first radiation beam 110. The conversion efficiency is also affected by other parameters, such as the size or thickness of the target material 120, the location of the target material 120 relative to the first focal region 210, or the angle of the target material 120 relative to the x-y plane.

可影響如何維持放射曝光量之一個屬性為第一輻射光束110之共焦參數。輻射光束之共焦參數為輻射光束之瑞立長度的兩倍，且瑞立長度為沿著輻射光束之傳播方向自腰部至橫截面面積加倍之地點之距離。參看圖2，對於輻射光束110，瑞立長度為沿著第一輻射光束110 之傳播方向212自其腰部(其為D1/2)至該第一光束之橫截面加倍之地點之距離。 One property that can affect how the amount of radiation exposure is maintained is the confocal parameter of the first radiation beam 110. The confocal parameter of the radiation beam is twice the Rayleigh length of the radiation beam, and the Rayleigh length is the distance from the waist to the location of the cross-sectional area along the direction of propagation of the radiation beam. Referring to FIG. 2, for the radiation beam 110, the Rayleigh length is along the first radiation beam 110. The direction of propagation 212 is from the waist (which is D1/2) to the location at which the cross-section of the first beam doubles.

舉例而言，如圖7A中所展示，第一輻射光束110之共焦參數如此長使得光束腰(D1/2)容易涵蓋目標材料120，且由第一輻射光束110截取的目標材料120之表面積(其橫越X方向而量測)保持相對恆定，即使目標材料120之位置偏離光束腰D1/2之部位亦如此。舉例而言，由第一輻射光束110在部位L1處截取的目標材料120之表面積係在由第一輻射光束110在部位L2處截取的目標材料120之表面積的20%內。在此第一情境(其中由第一輻射光束110截取的目標材料120之表面積較不可能偏離平均值(相比於下文所描述之第二情境))中，可藉由維持自第一輻射光束110導引至目標材料120之能量之量來維持或控制放射曝光量及(因此)擴張率(而不必將由第一輻射光束110曝光之目標材料120之表面積計算在內)。 For example, as shown in FIG. 7A, the confocal parameters of the first radiation beam 110 are so long that the beam waist (D1/2) easily covers the target material 120, and the target material 120 intercepted by the first radiation beam 110 The surface area (which is measured across the X direction) remains relatively constant, even if the position of the target material 120 is offset from the portion of the beam waist D1/2. For example, the surface area of the target material 120 intercepted by the first radiation beam 110 at the location L1 is within 20% of the surface area of the target material 120 intercepted by the first radiation beam 110 at the location L2. In this first context (where the surface area of the target material 120 intercepted by the first radiation beam 110 is less likely to deviate from the average value (compared to the second context described below)), it may be maintained by the first radiation beam The amount of energy directed to the target material 120 is maintained or controlled to maintain or control the amount of radiation exposure and, therefore, the rate of expansion (without having to account for the surface area of the target material 120 exposed by the first radiation beam 110).

作為另一實例，如圖7B中所展示，第一輻射光束110之共焦參數如此短使得光束腰(D1/2)不涵蓋目標材料120，且在目標材料120之位置偏離光束腰D1/2之部位L1的情況下，由第一輻射光束110截取之目標材料120之表面積偏離平均值。舉例而言，由第一輻射光束110在部位L1處截取的目標材料120之表面積實質上不同於由第一輻射光束110在部位L2處截取的目標材料120之表面積。在由第一輻射光束110截取的目標材料120之表面積更可能偏離平均值之此第二情境中(相比於在第一情境中)，可藉由控制自第一輻射光束110遞送至目標材料120之能量之量而維持或控制放射曝光量及(因此)擴張率。為了控制放射曝光量，控制每單位面積由目標材料120之表面接收的第一輻射光束110之放射能量。因此，重要的是控制第一輻射光束110之脈衝之能量，及目標材料120截取第一輻射光束110所處的第一輻射光束110之區域。使目標材料120截取第一輻射光束110所處的第一輻射光束110之區域與由第一輻射光束110截取之目標材料120之表面相關。可影響目標材料120截取第一輻射光束110所處的第一輻射光束110之區域之另一因素為第一輻射光束110之光束腰D1/2之部位及大小之穩定性。舉例而言，若第一輻射光束110之腰部大小及位置恆定，則吾人可控制目標材料120相對於光束腰D1/2之部位。第一輻射光束110之腰部大小及位置有可能歸因於(例如)光學源105中之熱效應而改變。一般而言，變得重要的是維持第一輻射光束110中之脈衝之恆定能量且亦控制光學源105之其他態樣，使得目標材料120到達相對於光束腰D1/2之已知軸向(Z方向)位置，而關於彼位置無過多變化。 As another example, as shown in FIG. 7B, the confocal parameters of the first radiation beam 110 are so short that the beam waist (D1/2) does not cover the target material 120 and is offset from the beam waist D1 at the location of the target material 120. In the case of the portion 1/2 of /2, the surface area of the target material 120 intercepted by the first radiation beam 110 deviates from the average value. For example, the surface area of the target material 120 intercepted by the first radiation beam 110 at the location L1 is substantially different from the surface area of the target material 120 intercepted by the first radiation beam 110 at the location L2. In this second context where the surface area of the target material 120 intercepted by the first radiation beam 110 is more likely to deviate from the average (as compared to in the first context), it can be delivered to the target material by control from the first radiation beam 110. The amount of energy of 120 maintains or controls the amount of radiation exposure and, therefore, the rate of expansion. In order to control the amount of radiation exposure, the radiant energy of the first radiation beam 110 received by the surface of the target material 120 per unit area is controlled. Therefore, it is important to control the energy of the pulses of the first radiation beam 110, and the target material 120 intercepts the region of the first radiation beam 110 where the first radiation beam 110 is located. The target material 120 is intercepted by the first radiation beam 110 where the first radiation beam 110 is located. The area is related to the surface of the target material 120 intercepted by the first radiation beam 110. Another factor that can affect the region of the target material 120 that intercepts the first radiation beam 110 where the first radiation beam 110 is located is the stability of the location and magnitude of the beam waist D1/2 of the first radiation beam 110. For example, if the waist size and position of the first radiation beam 110 are constant, then we can control the location of the target material 120 relative to the beam waist D1/2. The waist size and position of the first radiation beam 110 may be altered due to, for example, thermal effects in the optical source 105. In general, it becomes important to maintain a constant energy of the pulses in the first radiation beam 110 and also to control other aspects of the optical source 105 such that the target material 120 reaches a known axial direction relative to the beam waist D1/2. (Z direction) position, and there is not much change about the position.

用以將經修改目標121之擴張率維持或控制在值之可接受範圍內之全部所描述方法皆使用接下來所描述的量測系統155之用途。 All of the described methods for maintaining or controlling the rate of expansion of the modified target 121 within an acceptable range of values use the use of the measurement system 155 described below.

再次參看圖1，量測系統155量測與目標材料120、經修改目標121及第一輻射光束110中的任何一或多者相關聯之至少一個特性。舉例而言，量測系統155可量測第一輻射光束110之能量。如圖8A中所展示，例示性量測系統855A量測經導引至目標材料120之第一輻射光束110之能量。 Referring again to FIG. 1, measurement system 155 measures at least one characteristic associated with any one or more of target material 120, modified target 121, and first radiation beam 110. For example, measurement system 155 can measure the energy of first radiation beam 110. As shown in FIG. 8A, the illustrative measurement system 855A measures the energy of the first radiation beam 110 directed to the target material 120.

如圖8B中所展示，例示性量測系統855B量測在第一輻射光束110與目標材料120相互作用之後自目標材料120反射的輻射860之能量。自目標材料120進行之輻射860之反射可用以判定目標材料120相對於第一輻射光束110之實際位置之部位。 As shown in FIG. 8B, the illustrative measurement system 855B measures the energy of the radiation 860 that is reflected from the target material 120 after the first radiation beam 110 interacts with the target material 120. The reflection of the radiation 860 from the target material 120 can be used to determine the location of the target material 120 relative to the actual location of the first radiation beam 110.

在一些實施中，如圖8C中所展示，可將例示性量測系統855B置放於光學源105之光學放大器系統300內。在此實例中，量測系統855B可經置放成量測照射於光學放大器系統300內之光學元件中之一者(諸如薄膜偏光器)上或自該等光學元件中之一者反射的反射輻射860中之能量之量。自目標材料120反射之輻射860之量與遞送至目標材料120之能量之量成比例；因此，藉由量測反射輻射860，可控制或維持遞送至目標材料120之能量之量。另外，使在第一輻射光束110或反射輻射860中量測之能量之量與該光束中之光子數目相關。因此，可稱量測系統855A或855B量測各別光束中之光子之數目。另外，量測系統855B可被認為依據多少光子衝擊目標材料120而量測自目標材料120反射之光子之數目(該目標材料在其由第一輻射光束110撞擊之後就變成經修改目標121)。 In some implementations, as shown in FIG. 8C, an exemplary measurement system 855B can be placed within optical amplifier system 300 of optical source 105. In this example, measurement system 855B can be placed to reflect reflections on or reflected from one of the optical elements (such as a film polarizer) that are illuminated within optical amplifier system 300. The amount of energy in the radiation 860. The amount of radiation 860 reflected from target material 120 is proportional to the amount of energy delivered to target material 120; thus, by measuring reflected radiation 860, it can be controlled or The amount of energy delivered to the target material 120 is maintained. Additionally, the amount of energy measured in the first radiation beam 110 or the reflected radiation 860 is related to the number of photons in the beam. Therefore, the weighing system 855A or 855B measures the number of photons in the respective beams. Additionally, the measurement system 855B can be considered to measure the number of photons reflected from the target material 120 depending on how many photons impact the target material 120 (the target material becomes the modified target 121 after it is struck by the first radiation beam 110).

量測系統855A或855B可為光電感測器，諸如，光電池陣列(例如，2×2陣列或3×3陣列)。光電池具有對待量測光之波長之敏感度，且其具有適於待量測之光脈衝之持續時間的足夠速度或頻寬。 Measurement system 855A or 855B can be a photo-electrical sensor, such as a photocell array (eg, a 2x2 array or a 3x3 array). The photocell has sensitivity to the wavelength of the light to be measured and has a sufficient velocity or bandwidth for the duration of the light pulse to be measured.

一般而言，量測系統855A或855B可藉由量測橫越垂直於第一輻射光束110之傳播方向的方向之空間積分能量來量測輻射光束110之能量。因為可快速執行光束能量之量測，所以有可能對在第一輻射光束110中發射之每一脈衝採取一量測，且因此，該量測及控制可基於脈衝間進行。 In general, measurement system 855A or 855B can measure the energy of radiation beam 110 by measuring the spatial integrated energy across a direction perpendicular to the direction of propagation of first radiation beam 110. Since the measurement of the beam energy can be performed quickly, it is possible to take a measurement of each pulse transmitted in the first radiation beam 110, and therefore, the measurement and control can be performed based on the interpulse.

量測系統855A、855B可為快速光偵測器，諸如，適於長波長紅外線(LWIR)輻射之光電磁(PEM)偵測器。PEM偵測器可為用於量測近紅外線輻射或可見光輻射之矽二極體，或用於量測近紅外線輻射之InGaAs二極體。第一輻射光束110中之脈衝之能量可藉由積分藉由量測系統855A、855B量測之雷射脈衝信號來判定。 The metrology systems 855A, 855B can be fast photodetectors, such as photoelectromagnetic (PEM) detectors suitable for long wavelength infrared (LWIR) radiation. The PEM detector can be a germanium diode for measuring near-infrared radiation or visible radiation, or an InGaAs diode for measuring near-infrared radiation. The energy of the pulses in the first radiation beam 110 can be determined by integrating the laser pulse signals measured by the measurement systems 855A, 855B.

參看圖9A，量測系統155可為例示性量測系統955A，其量測目標材料120相對於目標位置之位置Tpos。目標位置可處於第一輻射光束110之光束腰處。可沿著平行於第一輻射光束110之光束軸線之方向(諸如第一軸向方向212)來量測目標材料120之位置。 Referring to Figure 9A, the measurement system 155 can be an exemplary measurement system 955A that measures the position Tpos of the target material 120 relative to the target location. The target position may be at the beam waist of the first radiation beam 110. The position of the target material 120 can be measured along a direction parallel to the beam axis of the first radiation beam 110, such as the first axial direction 212.

參看圖9B，量測系統155可為例示性量測系統955B，其量測目標材料120相對於集光器135之主焦點990之位置Tpos。此量測系統955B可包括在接近目標材料120時自目標材料120反射以量測目標材料120 之位置及目標材料120相對於腔室165內之座標系統之到達時間之雷射及/或攝影機。 Referring to FIG. 9B, the measurement system 155 can be an exemplary measurement system 955B that measures the position Tpos of the target material 120 relative to the main focus 990 of the concentrator 135. The metrology system 955B can include reflection from the target material 120 as it approaches the target material 120 to measure the target material 120 The position and location of the material 120 relative to the arrival time of the coordinate system within the chamber 165 is a laser and/or camera.

參看圖9C，量測系統155可為例示性量測系統955C，其在經修改目標121與第二輻射光束115相互作用之前量測處於一位置的經修改目標121之大小。舉例而言，量測系統955C可經組態以在經修改目標121處於第二目標部位116內時但在經修改目標121由第二輻射光束115撞擊之前量測經修改目標121之大小Smt。量測系統955C亦可判定經修改目標121之定向。量測系統955C可使用脈衝式背光照明器及攝影機(諸如，電荷耦合器件攝影機)之影像圖技術。 Referring to FIG. 9C, the measurement system 155 can be an exemplary measurement system 955C that measures the size of the modified target 121 at a location before the modified target 121 interacts with the second radiation beam 115. For example, the measurement system 955C can be configured to measure the size Smt of the modified target 121 before the modified target 121 is within the second target location 116 but before the modified target 121 is struck by the second radiation beam 115. Measurement system 955C may also determine the orientation of modified target 121. Measurement system 955C may use image-based imaging techniques of pulsed backlight illuminators and cameras, such as charge coupled device cameras.

量測系統155可包括量測子系統之集合，每一子系統經設計為量測特定特性且以不同速度或取樣時間間隔量測。子系統之此集合可一起工作以提供對第一輻射光束110如何與目標材料120相互作用以形成經修改目標121的清楚瞭解。 Measurement system 155 can include a collection of measurement subsystems, each of which is designed to measure a particular characteristic and measure at different speeds or sampling intervals. This set of subsystems can work together to provide a clear understanding of how the first radiation beam 110 interacts with the target material 120 to form the modified target 121.

量測系統155可包括腔室165內之複數個EUV感測器，該複數個EUV感測器用於偵測自在經修改目標121與第二輻射光束115相互作用之後由該經修改目標121產生的電漿發射之EUV能量。藉由偵測所發射之EUV能量，有可能獲得關於經修改目標121之角度或第二光束相對於第二輻射光束115之橫向偏移之資訊。 The measurement system 155 can include a plurality of EUV sensors within the chamber 165 for detecting the generated target 131 from the modified target 121 after interacting with the second radiation beam 115. The EUV energy emitted by the plasma. By detecting the EUV energy emitted, it is possible to obtain information about the angle of the modified target 121 or the lateral offset of the second beam relative to the second radiation beam 115.

在控制系統160之控制下使用光束調整系統180以使得能夠控制遞送至目標材料120之能量(放射曝光)之量。可藉由在假定在第一輻射光束110與目標材料120相互作用之位置處該第一輻射光束110之面積恆定的情況下控制第一輻射光束110內之能量之量而控制放射曝光。光束調整系統180自控制系統160接收一或多個信號。光束調整系統180經組態以調整光學源105之一或多個特徵以維持遞送至目標材料120之能量(亦即，放射曝光)之量或控制導引至目標材料120之能量之量。因此，光束調整系統180可包括控制光學源105之特徵之一或多個致動器，該等致動器可為用於使光學源105之特徵經修改之機械、電、光學、電磁或任何合適的力器件。 The beam conditioning system 180 is used under the control of the control system 160 to enable control of the amount of energy (radiation exposure) delivered to the target material 120. Radiation exposure can be controlled by controlling the amount of energy within the first radiation beam 110 assuming that the area of the first radiation beam 110 is constant at the location where the first radiation beam 110 interacts with the target material 120. Beam adjustment system 180 receives one or more signals from control system 160. The beam conditioning system 180 is configured to adjust one or more features of the optical source 105 to maintain an amount of energy (ie, radiation exposure) delivered to the target material 120 or to control the amount of energy directed to the target material 120. Thus, beam adjustment system 180 can include one or more of the features that control optical source 105 Actuators, which may be mechanical, electrical, optical, electromagnetic or any suitable force means for modifying the features of optical source 105.

在一些實施中，光束調整系統180包括耦合至第一輻射光束110之脈寬調整系統。脈寬調整系統經組態以調整第一輻射光束110之脈寬。在此實施中，脈寬調整系統可包括電光調變器，諸如，勃克爾盒。舉例而言，勃克爾盒配置於光產生器310內，且藉由開啟勃克爾盒達較短或較長時間段，由勃克爾盒透射之脈衝(及(因此)自光產生器310發射之脈衝)可經調整為較短或較長。 In some implementations, beam conditioning system 180 includes a pulse width adjustment system coupled to first radiation beam 110. The pulse width adjustment system is configured to adjust the pulse width of the first radiation beam 110. In this implementation, the pulse width adjustment system can include an electro-optic modulator, such as a Buller box. For example, the Boxer box is disposed within the light generator 310 and is pulsed (and thus emitted from the light generator 310) by the Turner box by opening the Boxer box for a shorter or longer period of time. The pulse) can be adjusted to be shorter or longer.

在其他實施中，光束調整系統180包括耦合至第一輻射光束110之脈衝功率調整系統。脈衝功率調整系統經組態以(例如)藉由調整第一輻射光束110之每一脈衝內之平均功率而調整每一脈衝之功率。在此實施中，脈衝功率調整系統可包括聲光調變器。聲光調變器可經配置成使得施加至調變器之邊緣處之壓電轉換器之RF信號的改變可變化以藉此改變自聲光調變器繞射之脈衝之功率。 In other implementations, beam conditioning system 180 includes a pulse power adjustment system coupled to first radiation beam 110. The pulse power adjustment system is configured to adjust the power of each pulse, for example, by adjusting the average power within each pulse of the first radiation beam 110. In this implementation, the pulse power adjustment system can include an acousto-optic modulator. The acousto-optic modulator can be configured such that a change in the RF signal applied to the piezoelectric transducer at the edge of the modulator can be varied to thereby change the power of the pulse diffracted by the acousto-optic modulator.

在一些實施中，光束調整系統180包括耦合至第一輻射光束110之能量調整系統。該能量調整系統經組態以調整第一輻射光束110之能量。舉例而言，能量調整系統可為電可變衰減器(諸如，在0V與半波電壓之間變化之勃克爾盒，或外部聲光調變器)。 In some implementations, beam conditioning system 180 includes an energy conditioning system coupled to first radiation beam 110. The energy adjustment system is configured to adjust the energy of the first radiation beam 110. For example, the energy adjustment system can be an electrically variable attenuator (such as a Birker box that varies between 0V and half-wave voltage, or an external acousto-optic modulator).

在一些實施中，目標材料120相對於光束腰D1/2之位置或角度變化如此多使得光束調整系統180包括控制光束腰D1/2相對於第一目標部位111之部位或角度或相對於腔室165內之在腔室165之座標系統中的另一部位之部位或角度之裝置。該裝置可為聚焦總成156之部件，且其可用以沿著Z方向或沿著橫向於Z方向之方向(例如，沿著由X及Y方向界定之平面)移動光束腰。 In some implementations, the position or angle of the target material 120 relative to the beam waist D1/2 varies so much that the beam adjustment system 180 includes a portion or angle that controls the beam waist D1/2 relative to the first target portion 111 or relative to A means within the chamber 165 that is at a location or angle of another location in the coordinate system of the chamber 165. The device can be a component of the focusing assembly 156 and can be used to move the beam waist along the Z direction or in a direction transverse to the Z direction (eg, along a plane defined by the X and Y directions).

如上文所論述，控制系統160分析自量測系統155接收之資訊，且判定如何調整第一輻射光束110之一或多個屬性以藉此控制及維持經修改目標121之擴張率。參看圖10，控制系統160可包括與光源100之其他部件介接之一或多個子控制器1000、1005、1010、1015，諸如，子控制器1000經具體組態以與光學源105介接(自光學源105接收資訊及將資訊發送至光學源105)、子控制器1005經具體組態以與量測系統155介接、子控制器1010經組態以與光束遞送系統150介接，且子控制器1015經組態以與目標材料供應系統125介接。光源100可包括圖1及圖10中未展示，但可與控制系統160介接之其他組件。舉例而言，光源100可包括診斷系統，諸如，小滴位置偵測回饋系統，及一或多個目標或小滴成像器。目標成像器提供指示小滴(例如)相對於特定位置(諸如，集光器135之主焦點990)之位置之輸出，且將此輸出提供至小滴位置偵測回饋系統，小滴位置偵測回饋系統可(例如)計算小滴位置及軌跡，自該小滴位置及軌跡可基於逐小滴地或平均地計算出小滴位置誤差。因此，小滴位置偵測回饋系統將小滴位置誤差作為輸入提供至控制系統160之子控制器。控制系統160可將(例如)雷射位置、方向及時序校正信號提供至光學源105內之可用以(例如)控制雷射時序電路之雷射控制系統，及/或提供至光束控制系統以控制光束傳送系統之經放大光束位置及塑形，以改變第一輻射光束110或第二輻射光束115之焦平面之部位及/或焦度。 As discussed above, control system 160 analyzes the information received from measurement system 155 and determines how to adjust one or more attributes of first radiation beam 110 to thereby control and maintain The expansion rate of target 121 has been revised. Referring to FIG. 10, control system 160 can include one or more sub-controllers 1000, 1005, 1010, 1015 interfacing with other components of light source 100, such as sub-controller 1000 being specifically configured to interface with optical source 105 ( Receiving information from optical source 105 and transmitting information to optical source 105), sub-controller 1005 is specifically configured to interface with metrology system 155, sub-controller 1010 is configured to interface with beam delivery system 150, and Sub-controller 1015 is configured to interface with target material supply system 125. Light source 100 can include other components not shown in FIGS. 1 and 10 but that can interface with control system 160. For example, light source 100 can include a diagnostic system, such as a droplet position detection feedback system, and one or more target or droplet imagers. The target imager provides an output indicative of the position of the droplet, for example, relative to a particular location, such as the primary focus 990 of the concentrator 135, and provides this output to the droplet position detection feedback system, droplet position detection The feedback system can, for example, calculate the droplet position and trajectory from which the droplet position error can be calculated on a droplet-by-small or average basis. Thus, the droplet position detection feedback system provides droplet position error as an input to the sub-controller of control system 160. Control system 160 can provide, for example, laser position, direction, and timing correction signals to a laser control system within optical source 105 that can be used, for example, to control a laser timing circuit, and/or to a beam control system to control The amplified beam position and shaping of the beam delivery system changes the location and/or power of the focal plane of the first radiation beam 110 or the second radiation beam 115.

目標材料遞送系統125包括目標材料遞送控制系統，目標材料遞送控制系統可操作以回應於(例如)來自控制系統160之信號以修改如由內部遞送機構釋放的目標材料120之小滴之釋放點，以校正到達所要目標部位111之小滴中的誤差。 The target material delivery system 125 includes a target material delivery control system operative to respond to, for example, signals from the control system 160 to modify the release points of the droplets of the target material 120 as released by the internal delivery mechanism, To correct the error in the droplet reaching the desired target site 111.

控制系統160通常包括數位電子電路、電腦硬體、韌體及軟體中之一或多者。控制系統160亦可包括適當輸入及輸出器件1020、一或多個可程式化處理器1025，及有形地體現於機器可讀儲存器件中以供可程式化處理器執行之一或多個電腦程式產品1030。此外，子控制器 (諸如子控制器1000、1005、1010、1015)中之每一者可包括其自有適當輸入及輸出器件、一或多個可程式化處理器，及有形地體現於機器可讀儲存器件中以供可程式化處理器執行之一或多個電腦程式產品。 Control system 160 typically includes one or more of digital electronic circuitry, computer hardware, firmware, and software. The control system 160 can also include a suitable input and output device 1020, one or more programmable processors 1025, and tangibly embodied in a machine readable storage device for the programmable processor to execute one or more computer programs Product 1030. In addition, the sub-controller Each of (such as sub-controllers 1000, 1005, 1010, 1015) can include its own suitable input and output devices, one or more programmable processors, and tangibly embodied in a machine-readable storage device. For the programmable processor to execute one or more computer program products.

一或多個可程式化處理器可各自執行指令程式以藉由對輸入資料進行操作且產生適當輸出來執行所要功能。通常，處理器自唯讀記憶體及/或隨機存取記憶體接收指令及資料。適合於有形地體現電腦程式指令及資料之儲存器件包括所有形式之非揮發性記憶體，包括(作為實例)半導體記憶體器件，諸如EPROM、EEPROM及快閃記憶體器件；磁碟，諸如內部硬碟及抽取式磁碟；磁光碟；以及CD-ROM磁碟。前述任一者可由經特殊設計之特殊應用積體電路(ASIC)補充或併入於經特殊設計之特殊應用積體電路(ASIC)中。 The one or more programmable processors can each execute an instruction program to perform the desired function by operating on the input material and generating an appropriate output. Typically, the processor receives instructions and data from read-only memory and/or random access memory. Storage devices suitable for tangibly embodying computer program instructions and data include all forms of non-volatile memory, including (as an example) semiconductor memory devices such as EPROM, EEPROM, and flash memory devices; disks, such as internal hard Discs and removable disks; magneto-optical discs; and CD-ROM discs. Either of the foregoing may be supplemented by a specially designed special application integrated circuit (ASIC) or incorporated into a specially designed special application integrated circuit (ASIC).

為此目的，控制系統160包括自一或多個量測系統155接收量測資料之分析程式1040。一般而言，分析程式1040執行判定如何修改或控制自第一輻射光束110遞送至目標材料120之能量或修改或控制第一輻射光束110之能量所需的所有分析，且可在基於脈衝間獲得量測資料的情況下基於脈衝間來執行此分析。 To this end, control system 160 includes an analysis program 1040 that receives measurement data from one or more measurement systems 155. In general, the analysis program 1040 performs all of the analysis required to determine how to modify or control the energy delivered from the first radiation beam 110 to the target material 120 or modify or control the energy of the first radiation beam 110, and can be obtained between pulses based on the pulse. In the case of measurement data, this analysis is performed based on the interpulse.

參看圖11，光源100(在控制系統160之控制下)執行用於維持或控制經修改目標121之擴張率(ER)以藉此改良光源100之轉換效率之工序1100。光源100提供目標材料120(1105)。舉例而言，目標材料供應系統125(在控制系統160之控制下)可將目標材料120遞送至第一目標部位111。目標材料供應系統125可包括其自有致動系統(連接至控制系統160)及迫使目標材料通過之噴嘴，其中致動系統控制經導引通過噴嘴以產生導引朝向第一目標部位111之小滴串流的目標材料之量。 Referring to FIG. 11, light source 100 (under the control of control system 160) performs a process 1100 for maintaining or controlling the rate of expansion (ER) of modified target 121 to thereby improve the conversion efficiency of light source 100. Light source 100 provides target material 120 (1105). For example, target material supply system 125 (under the control of control system 160) can deliver target material 120 to first target site 111. The target material supply system 125 can include its own actuation system (connected to the control system 160) and a nozzle that forces the target material to pass through, wherein the actuation system controls the passage through the nozzle to create a droplet that is directed toward the first target site 111. The amount of target material that is streamed.

接下來，光源100將第一輻射光束110導引朝向目標材料120以將能量遞送至目標材料120，以修改目標材料120之幾何分佈以形成經修改目標121(1110)。詳言之，將第一輻射光束110通過一或多個光學放大器之第一集合300而導引朝向目標材料120。舉例而言，光學源105可由控制系統160啟動以產生第一輻射光束110(呈脈衝之形式)，該第一輻射光束可經導引朝向目標部位111內之目標材料120，如圖2中所展示。第一輻射光束110之焦平面(D1/2)可經組態以橫穿目標部位111。此外，在一些實施中，焦平面可與目標材料120重疊或與目標材料120之面對第一輻射光束110之邊緣重疊。可藉由(例如)將第一輻射光束110導引通過光束遞送系統150而將第一輻射光束110導引至目標材料120(1110)，其中各種光學件可用以修改輻射110之方向或形狀或發散度使得其可與目標材料120相互作用。 Next, light source 100 directs first radiation beam 110 toward target material 120 to deliver energy to target material 120 to modify the geometric distribution of target material 120 to form modified target 121 (1110). In particular, the first radiation beam 110 is passed through one or more optical apertures The first set 300 of appliances is directed toward the target material 120. For example, the optical source 105 can be activated by the control system 160 to generate a first radiation beam 110 (in the form of a pulse) that can be directed toward the target material 120 within the target site 111, as shown in FIG. Show. The focal plane (D1/2) of the first radiation beam 110 can be configured to traverse the target site 111. Moreover, in some implementations, the focal plane can overlap the target material 120 or overlap the edge of the target material 120 that faces the first radiation beam 110. The first radiation beam 110 can be directed to the target material 120 (1110) by, for example, directing the first radiation beam 110 through the beam delivery system 150, wherein the various optics can be used to modify the direction or shape of the radiation 110 or The divergence is such that it can interact with the target material 120.

可藉由使目標材料120與第一輻射光束110之涵蓋其共焦參數之區域重疊而將第一輻射光束110導引朝向目標材料120(1110)。在一些實施中，第一輻射光束110之共焦參數可如此長使得光束腰(D1/2)容易涵蓋目標材料120，且由第一輻射光束110截取的目標材料120之表面積(其橫越X方向而量測)保持相對恆定，即使目標材料120之位置偏離光束腰D1/2之部位亦如此(如圖7A中所展示)。舉例而言，第一輻射光束110之共焦參數可大於1.5毫米。在其他實施中，第一輻射光束110之共焦參數如此短使得光束腰(D1/2)不涵蓋目標材料120，且在目標材料120之位置偏離光束腰D1/2之部位L1的情況下，由第一輻射光束110截取之目標材料120之表面積偏離相當多(如圖7B中所展示)。舉例而言，共焦參數可(例如)小於或等於2毫米。 The first radiation beam 110 can be directed toward the target material 120 (1110) by overlapping the target material 120 with a region of the first radiation beam 110 that encompasses its confocal parameters. In some implementations, the confocal parameter of the first radiation beam 110 can be so long that the beam waist (D1/2) easily covers the target material 120, and the surface area of the target material 120 intercepted by the first radiation beam 110 (which traverses The X direction is measured) to remain relatively constant, even if the position of the target material 120 is offset from the beam waist D1/2 (as shown in Figure 7A). For example, the confocal parameter of the first radiation beam 110 can be greater than 1.5 millimeters. In other implementations, the confocal parameters of the first radiation beam 110 are so short that the beam waist (D1/2) does not cover the target material 120, and the position of the target material 120 is offset from the portion L1 of the beam waist D1/2. Next, the surface area of the target material 120 intercepted by the first radiation beam 110 deviates considerably (as shown in Figure 7B). For example, the confocal parameter can be, for example, less than or equal to 2 millimeters.

經修改目標121將其形狀自恰好在受到第一輻射光束110影響之後的目標材料120之形狀改變成經擴張形狀，且此經擴張形狀隨著其遠離第一目標部位111飄移朝向第二目標部位116繼續變形。經修改目標121可具有自目標材料之形狀變形成具有實質上平面表面的熔融金屬之圓盤形體積之幾何分佈(諸如圖1及圖2中所展示)。根據擴張率而將經修改目標121變換成圓盤形體積。藉由根據擴張率使經修改目標121 沿著至少一個軸線擴張而變換經修改目標121。舉例而言，如圖2中所展示，至少沿著大體上平行於X方向之長軸230來擴張經修改目標121。沿著不平行於第二輻射光束115之光軸(其為第二軸向方向217)之至少一個軸線來擴張經修改目標121。 The modified target 121 changes its shape from the shape of the target material 120 just after being affected by the first radiation beam 110 to an expanded shape, and the expanded shape drifts away from the first target portion 111 toward the second target portion. 116 continues to deform. The modified target 121 can have a geometric distribution (such as that shown in Figures 1 and 2) that deforms from the shape of the target material into a disk-shaped volume of molten metal having a substantially planar surface. The modified target 121 is transformed into a disk-shaped volume according to the expansion rate. By modifying the target 121 according to the expansion rate The modified target 121 is transformed along at least one axis. For example, as shown in FIG. 2, the modified target 121 is expanded at least along a major axis 230 that is substantially parallel to the X direction. The modified target 121 is expanded along at least one axis that is not parallel to the optical axis of the second radiation beam 115, which is the second axial direction 217.

儘管第一輻射光束110藉由改變目標材料120之形狀而主要與目標材料120相互作用，但有可能使第一輻射光束110以其他方式與目標材料120相互作用；舉例而言，第一輻射光束110可將目標材料120之一部分轉換成發射EUV光之電漿。然而，相比於自產生自經修改目標121的電漿發射之EUV光，自產生自目標材料120的電漿發射較少EUV光(歸因於經修改目標121與第二輻射光束115之間的後續相互作用)，且自第一輻射光束110對目標材料120之主要作用為為了形成經修改目標121進行的目標材料120之幾何分佈之修改。 Although the first radiation beam 110 primarily interacts with the target material 120 by changing the shape of the target material 120, it is possible for the first radiation beam 110 to otherwise interact with the target material 120; for example, the first radiation beam 110 may convert a portion of the target material 120 into a plasma that emits EUV light. However, compared to the EUV light emitted from the plasma generated from the modified target 121, less plasma is emitted from the plasma generated from the target material 120 (due to the relationship between the modified target 121 and the second radiation beam 115) Subsequent interactions), and the primary effect of the first radiation beam 110 on the target material 120 is the modification of the geometric distribution of the target material 120 to form the modified target 121.

光源100將第二輻射光束115導引朝向經修改目標121使得第二輻射光束將經修改目標121之至少部分轉換成發射EUV光之電漿129(1115)。詳言之，光源100將第二輻射光束115通過一或多個光學放大器之第二集合305而導引朝向經修改目標121。舉例而言，光學源105可由控制系統160啟動以產生第二輻射光束115(呈脈衝之形式)，該第二輻射光束可經導引朝向第二目標部位116內之經修改目標121，如圖2中所展示。第一集合300中之光學放大器中之至少一者可在第二集合305中，諸如圖5中所展示之實例。 Light source 100 directs second radiation beam 115 toward modified target 121 such that the second radiation beam converts at least a portion of modified target 121 into plasma 129 that emits EUV light (1115). In particular, light source 100 directs second radiation beam 115 through modified second set 305 of one or more optical amplifiers toward modified target 121. For example, optical source 105 can be activated by control system 160 to generate a second radiation beam 115 (in the form of a pulse) that can be directed toward modified target 121 within second target site 116, as shown Shown in 2. At least one of the optical amplifiers in the first set 300 can be in the second set 305, such as the example shown in FIG.

光源100量測與相對於輻射光束110之目標材料120及經修改目標121中之一或多者相關聯的一或多個特性(例如，能量)(1120)。舉例而言，量測系統155量測在控制系統160之控制下之特性，且控制系統160自量測系統155接收量測資料。光源100基於該一或多個特性而控制在目標材料120處來自第一輻射光束110的放射曝光量(1125)。如上文所論述，放射曝光量為每單位面積自第一輻射光束110遞送至目標材料120之放射能量之量。換言之，放射曝光量為每單位面積由目標材料120之表面接收之放射能量。 Light source 100 measures one or more characteristics (eg, energy) associated with one or more of target material 120 and modified target 121 of radiation beam 110 (1120). For example, measurement system 155 measures characteristics under control of control system 160, and control system 160 receives measurement data from measurement system 155. Light source 100 controls the amount of radiation exposure (1125) from first radiation beam 110 at target material 120 based on the one or more characteristics. As discussed above, the amount of radiation exposure is delivered per unit area from the first radiation beam 110 to the target. The amount of radiant energy of material 120. In other words, the amount of radiation exposure is the amount of radiation energy received by the surface of the target material 120 per unit area.

在一些實施中，可量測之特性(1120)為第一輻射光束110之能量。在其他一般實施中，可量測之特性(1120)為目標材料120相對於第一輻射光束110之位置(例如，相對於第一輻射光束110之光束腰)之位置，此位置可在縱向(Z)方向上抑或在橫向於縱向方向之方向(例如，在X-Y平面中)予以判定。 In some implementations, the measurable characteristic (1120) is the energy of the first radiation beam 110. In other general implementations, the measurable characteristic (1120) is the position of the target material 120 relative to the position of the first radiation beam 110 (eg, relative to the beam waist of the first radiation beam 110), which may be in the longitudinal direction. The direction is determined in the (Z) direction or in the direction transverse to the longitudinal direction (for example, in the XY plane).

可藉由量測自目標材料120之光學反射表面反射之輻射860之能量來量測第一輻射光束110之能量(諸如圖8B及圖8C中所展示)。可藉由量測自目標材料120之光學反射表面反射之輻射860橫越四個個別光電池之總強度來量測該輻射860之能量。 The energy of the first radiation beam 110 can be measured by measuring the energy of the radiation 860 reflected from the optically reflective surface of the target material 120 (such as shown in Figures 8B and 8C). The energy of the radiation 860 can be measured by measuring the total intensity of the four individual photovoltaic cells across the radiation 860 reflected from the optically reflective surface of the target material 120.

背向反射輻射860之總能量含量可結合關於第一輻射光束110之其他資訊而使用，以判定沿著Z方向或橫向於Z方向之方向(諸如，在X-Y平面中)在目標材料120與第一輻射光束110之光束腰之間的相對位置。或，可使用背向反射輻射860之總能量含量(連同其他資訊)以判定沿著Z方向在目標材料120與第一輻射光束之光束腰之間的相對位置。 The total energy content of the retroreflective radiation 860 can be used in conjunction with other information regarding the first radiation beam 110 to determine the direction along the Z direction or transverse to the Z direction (such as in the XY plane) at the target material 120 and The relative position between the beam waists of a radiation beam 110. Alternatively, the total energy content of the back-reflected radiation 860 (along with other information) can be used to determine the relative position between the target material 120 and the beam waist of the first radiation beam along the Z-direction.

可藉由量測導引朝向目標材料120之第一輻射光束110之能量來量測第一輻射光束110之能量(諸如圖8A中所展示)。可藉由量測橫越垂直於第一輻射光束110之傳播方向(第一軸向方向212)的方向之空間積分能量來量測第一輻射光束110之能量。 The energy of the first radiation beam 110 (such as shown in Figure 8A) can be measured by measuring the energy directed to the first radiation beam 110 of the target material 120. The energy of the first radiation beam 110 can be measured by measuring the spatial integrated energy across a direction perpendicular to the direction of propagation (first axial direction 212) of the first radiation beam 110.

在一些實施中，可量測之特性(1120)為第一輻射光束110在其行進朝向目標材料120時之指向或方向(如圖8A中所展示)。關於指向之此資訊可用以判定目標材料120之位置與第一輻射光束110之軸線之間的疊對誤差。 In some implementations, the measurable characteristic (1120) is the orientation or direction of the first radiation beam 110 as it travels toward the target material 120 (as shown in Figure 8A). This information regarding the pointing can be used to determine the stacking error between the position of the target material 120 and the axis of the first radiation beam 110.

在一些實施中，可量測之特性(1120)為目標材料120相對於目標位置之位置。目標位置可處於第一輻射光束110沿著Z方向之光束腰(D1/2)。可沿著平行於第一軸向方向212之方向量測目標材料120之位置。可量測相對於集光器135之主焦點990之目標位置。可沿著兩個或多於兩個非平行方向量測目標材料120之位置。 In some implementations, the measurable characteristic (1120) is the target material 120 relative to the target The location of the location. The target position may be at the beam waist (D1/2) of the first radiation beam 110 along the Z direction. The position of the target material 120 can be measured in a direction parallel to the first axial direction 212. The target position relative to the main focus 990 of the concentrator 135 can be measured. The position of the target material 120 can be measured in two or more than two non-parallel directions.

在一些實施中，可量測之特性(1120)為在第二輻射光束將經修改目標之至少部分轉換成電漿之前的經修改目標之大小。 In some implementations, the measurable characteristic (1120) is the size of the modified target before the second radiation beam converts at least a portion of the modified target into a plasma.

在一些實施中，可量測之特性(1120)對應於經修改目標之擴張率之估計。 In some implementations, the measurable characteristic (1120) corresponds to an estimate of the expansion rate of the modified target.

在一些實施中，可量測之特性(1120)對應於自目標材料120之光學反射表面反射的輻射860之特性(諸如圖8B及圖8C中所展示)。。此資訊可用以判定目標材料120與第一輻射光束110之光束腰之間的相對位置(例如，沿著Z方向)。可藉由使用置放於反射輻射860之路徑中的散光成像系統來判定或量測此空間特性。 In some implementations, the measurable characteristic (1120) corresponds to characteristics of the radiation 860 that is reflected from the optically reflective surface of the target material 120 (such as shown in Figures 8B and 8C). . This information can be used to determine the relative position (eg, along the Z direction) between the target material 120 and the beam waist of the first radiation beam 110. This spatial characteristic can be determined or measured by using an astigmatic imaging system placed in the path of reflected radiation 860.

在一些實施中，可量測之特性(1120)對應於相對於第一輻射光束110之角度的輻射860經導引所成之角度。此經量測角度可用以判定沿著橫向於Z方向之方向在目標材料120與第一輻射光束110之光束軸線之間的距離。 In some implementations, the measurable characteristic (1120) corresponds to an angle at which the radiation 860 is angled relative to the angle of the first radiation beam 110. This measured angle can be used to determine the distance between the target material 120 and the beam axis of the first radiation beam 110 along a direction transverse to the Z direction.

在其他實施中，可量測之特性(1120)對應於在第一輻射光束110與目標材料120相互作用之後形成的經修改目標121之空間態樣。舉例而言，可量測相對於方向(例如，在橫向於Z方向之X-Y平面中之方向)之經修改目標121之角度。關於經修改目標121之角度之此資訊可用以判定沿著橫向於Z方向之方向在目標材料120與第一輻射光束110之軸線之間的距離。作為另一實例，可在經修改目標121初次根據目標材料120與第一輻射光束110之間的相互作用而形成之後的預定或固定時間之後量測經修改目標121之大小或擴張率。關於經修改目標121之大小或擴張率之此資訊可用以在無人知曉第一輻射光束110之能量恆定的情況下判定沿著縱向方向(Z方向)在目標材料120與第一輻射光束110之光束腰之間的距離。 In other implementations, the measurable characteristic (1120) corresponds to a spatial aspect of the modified target 121 formed after the first radiation beam 110 interacts with the target material 120. For example, the angle of the modified target 121 relative to the direction (eg, the direction in the X-Y plane transverse to the Z direction) can be measured. This information regarding the angle of the modified target 121 can be used to determine the distance between the target material 120 and the axis of the first radiation beam 110 along a direction transverse to the Z direction. As another example, the size or expansion rate of the modified target 121 may be measured after the modified target 121 is initially formed for a predetermined or fixed time based on the interaction between the target material 120 and the first radiation beam 110. This information regarding the size or expansion rate of the modified target 121 can be used to keep the energy of the first radiation beam 110 constant at no one. The distance between the target material 120 and the beam waist of the first radiation beam 110 in the longitudinal direction (Z direction) is determined.

可針對第一輻射光束110之每一脈衝儘可能快速地量測特性(1120)。舉例而言，若量測系統155包括PEM或四重電池(4個PEM之配置)，則量測速率可與脈衝間一樣快。 The characteristic can be measured as quickly as possible for each pulse of the first radiation beam 110 (1120). For example, if the measurement system 155 includes a PEM or a quad battery (a configuration of 4 PEMs), the measurement rate can be as fast as between pulses.

另一方面，對於量測諸如目標材料120或經修改目標121之大小或擴張率之特性的量測系統155，可將攝影機用於該量測系統155，但攝影機通常慢得多，例如，攝影機可在約1赫茲至約200赫茲之速率下量測。 On the other hand, for a measurement system 155 that measures characteristics such as the size or expansion rate of the target material 120 or the modified target 121, a camera can be used for the measurement system 155, but the camera is typically much slower, for example, a camera It can be measured at a rate of from about 1 Hz to about 200 Hz.

在一些實施中，可控制自第一輻射光束110遞送至目標材料120之放射曝光量之量(1125)以藉此控制或維持經修改目標之擴張率。在其他實施中，可藉由基於一或多個經量測特性判定是否應調整第一輻射光束110之特徵而控制自第一輻射光束110遞送至目標材料120之放射曝光量之量(1125)。因此，若判定出應調整第一輻射光束110之特徵，則(例如)可調整第一輻射光束110之脈衝之能量含量，或可調整第一輻射光束110在目標材料120之位置處之區域。可藉由調整第一輻射光束110之脈寬、第一輻射光束110之脈衝持續時間及第一輻射光束110之脈衝之平均或瞬時功率中的一或多者來調整第一輻射光束110之脈衝之能量含量。可藉由調整目標材料120與第一輻射光束110之光束腰之間的相對軸向(沿著Z方向)位置來調整與目標材料120相互作用之第一輻射光束110之區域。 In some implementations, the amount of radiation exposure delivered to the target material 120 from the first radiation beam 110 can be controlled (1125) to thereby control or maintain the rate of expansion of the modified target. In other implementations, the amount of radiation exposure delivered to the target material 120 from the first radiation beam 110 can be controlled (1125) by determining whether the characteristics of the first radiation beam 110 should be adjusted based on one or more measured characteristics. . Therefore, if it is determined that the characteristics of the first radiation beam 110 should be adjusted, for example, the energy content of the pulse of the first radiation beam 110 can be adjusted, or the region of the first radiation beam 110 at the position of the target material 120 can be adjusted. The pulse of the first radiation beam 110 can be adjusted by adjusting one or more of the pulse width of the first radiation beam 110, the pulse duration of the first radiation beam 110, and the average or instantaneous power of the pulses of the first radiation beam 110. Energy content. The region of the first radiation beam 110 that interacts with the target material 120 can be adjusted by adjusting the relative axial (along Z direction) position between the target material 120 and the beam waist of the first radiation beam 110.

在一些實施中，可針對第一輻射光束110之每一脈衝量測一或多個特性(1120)。以此方式，可針對第一輻射光束110之每一脈衝判定是否應調整第一輻射光束110之特徵。 In some implementations, one or more characteristics (1120) can be measured for each pulse of the first radiation beam 110. In this manner, whether or not the characteristics of the first radiation beam 110 should be adjusted can be determined for each pulse of the first radiation beam 110.

在一些實施中，可藉由在經發射及收集之EUV光140之至少一部分正曝光微影工具之晶圓時控制自第一輻射光束110遞送至目標材料 120之放射曝光量而控制該放射曝光量(例如，在放射曝光量之可接受範圍內)。 In some implementations, control can be delivered from the first radiation beam 110 to the target material by at least a portion of the emitted and collected EUV light 140 being exposed to the wafer of the lithography tool. The radiation exposure amount is controlled by 120 (for example, within an acceptable range of the radiation exposure amount).

工序1100亦可包括收集自電漿發射之EUV光130之至少一部分(使用集光器135)；及將經收集EUV光140導引朝向晶圓以將晶圓曝光至EUV光140。 The process 1100 can also include collecting at least a portion of the EUV light 130 emitted from the plasma (using the concentrator 135); and directing the collected EUV light 140 toward the wafer to expose the wafer to the EUV light 140.

在一些實施中，一或多個經量測特性(1120)包括自經修改目標121反射之數個光子。可依據多少光子撞擊目標材料120而量測自經修改目標121反射之光子之數目。 In some implementations, the one or more measured characteristics (1120) include a number of photons reflected from the modified target 121. The number of photons reflected from the modified target 121 can be measured based on how many photons hit the target material 120.

如上文所論述，工序1100包括基於一或多個特性控制在目標材料120處來自第一輻射光束110的放射曝光量(1125)。舉例而言，可控制放射曝光量(1125)使得將放射曝光量維持在預定放射曝光量範圍內。放射曝光量為每單位面積自第一輻射光束110遞送至目標材料120之放射能量之量。換言之，放射曝光量為每單位面積由目標材料120之表面接收之放射能量。若控制曝光至第一輻射光束110或由第一輻射光束110截取的目標材料120之表面之單位面積(或將其維持在可接受範圍內)，則放射曝光量之此因數保持相對恆定，且有可能藉由將第一輻射光束110之能量維持在能量之可接受範圍內而控制目標材料120處之放射曝光量或維持目標材料120處之放射曝光量(1125)。存在用以將曝光至第一輻射光束110之目標材料120之表面的單位面積維持在面積之可接受範圍內之各種方式。接下來論述此等方式。 As discussed above, the process 1100 includes controlling the amount of radiation exposure (1125) from the first radiation beam 110 at the target material 120 based on one or more characteristics. For example, the amount of radiation exposure (1125) can be controlled such that the amount of radiation exposure is maintained within a predetermined range of radiation exposure. The amount of radiation exposure is the amount of radiation energy delivered per unit area from the first radiation beam 110 to the target material 120. In other words, the amount of radiation exposure is the amount of radiation energy received by the surface of the target material 120 per unit area. If the unit area of the surface of the target material 120 that is exposed to the first radiation beam 110 or intercepted by the first radiation beam 110 is controlled (or maintained within an acceptable range), the factor of the amount of radiation exposure remains relatively constant, and It is possible to control the amount of radiation exposure at the target material 120 or to maintain the amount of radiation exposure at the target material 120 by maintaining the energy of the first radiation beam 110 within an acceptable range of energy (1125). There are various ways to maintain the unit area of the surface of the target material 120 exposed to the first radiation beam 110 within an acceptable range of the area. These methods are discussed next.

可控制在目標材料120處來自第一輻射光束110的放射曝光量(1125)使得將第一輻射光束110之脈衝能量維持(藉由使用經量測特性(1120)之回饋控制件)處於恆定位準或在可接受值之範圍內，而不管可造成能量波動之干擾。 The amount of radiation exposure (1125) from the first radiation beam 110 at the target material 120 can be controlled such that the pulse energy of the first radiation beam 110 is maintained (by using the feedback control of the measured characteristic (1120)) at a constant level Quasi- or within acceptable values, regardless of interference that can cause energy fluctuations.

在其他態樣中，可控制在目標材料120處來自第一輻射光束110的放射曝光量(1125)，使得藉由使用經量測特性(1120)之回饋控制件調整(例如，增加或減低)第一輻射光束110之脈衝能量，以補償目標材料120相對於第一輻射光束110之光束腰之位置在縱向(Z方向)置放上的誤差。 In other aspects, the amount of radiation exposure (1125) from the first radiation beam 110 at the target material 120 can be controlled such that the feedback control is adjusted by using the measured characteristic (1120). The pulse energy of the first radiation beam 110 is integrated (e.g., increased or decreased) to compensate for errors in the longitudinal (Z-direction) placement of the target material 120 relative to the beam waist of the first radiation beam 110.

第一輻射光束110可為脈衝式輻射光束，使得光脈衝經導引朝向目標材料120(1110)。相似地，第二輻射光束115可為脈衝式輻射光束使得光脈衝經導引朝向經修改目標121(1115)。 The first radiation beam 110 can be a pulsed radiation beam such that the light pulses are directed toward the target material 120 (1110). Similarly, the second radiation beam 115 can be a pulsed radiation beam such that the light pulse is directed toward the modified target 121 (1115).

目標材料120可為自目標材料供應系統125產生的目標材料120之小滴。以此方式，目標材料120之幾何分佈可經修改成經修改目標121，該經修改目標121變換成具有實質上平面表面的熔融金屬之圓盤形體積。根據擴張率將目標材料小滴變換成圓盤形體積。 The target material 120 can be a droplet of the target material 120 produced from the target material supply system 125. In this manner, the geometrical distribution of target material 120 can be modified to modified target 121, which is transformed into a disk-shaped volume of molten metal having a substantially planar surface. The target material droplets are transformed into a disc-shaped volume according to the expansion rate.

參看圖12，藉由光源100執行工序1200(在控制系統160之控制下)，以使由根據經修改目標121與第二輻射光束115之間的相互作用而形成的電漿129所產生之EUV光能量穩定。相似於以上之工序1100，光源100提供目標材料120(1205)；光源100將第一輻射光束110導引朝向目標材料120以將能量遞送至目標材料120，以修改目標材料120之幾何分佈以形成經修改目標121(1210)；且光源100將第二輻射光束115導引朝向經修改目標121使得第二輻射光束將經修改目標121之至少部分轉換成發射EUV光之電漿129(1215)。光源100使用工序1110(1220)控制自第一輻射光束110施加至目標材料120之放射曝光量。 Referring to Figure 12, process 1200 (under the control of control system 160) is performed by light source 100 to cause EUV generated by plasma 129 formed in accordance with the interaction between modified target 121 and second radiation beam 115. The light energy is stable. Similar to the above process 1100, the light source 100 provides a target material 120 (1205); the light source 100 directs the first radiation beam 110 toward the target material 120 to deliver energy to the target material 120 to modify the geometric distribution of the target material 120 to form The target 121 (1210) is modified; and the light source 100 directs the second radiation beam 115 toward the modified target 121 such that the second radiation beam converts at least a portion of the modified target 121 into a plasma 129 that emits EUV light (1215). The light source 100 controls the amount of radiation exposure applied from the first radiation beam 110 to the target material 120 using a process 1110 (1220).

藉由控制放射曝光量而使EUV光130之功率或能量穩定(1225)。由電漿129產生之EUV能量(或功率)取決於至少兩個函數，第一函數為轉換效率CE且第二函數為第二輻射光束115之能量。轉換效率為由第二輻射光束115轉換成電漿129的經修改目標121之百分比。轉換效率取決於若干變數，包括第二輻射光束115之峰值功率、經修改目標121在其與第二輻射光束115相互作用時之大小、經修改目標121相對於所要位置之位置、第二輻射光束115在其與經修改目標121相互作用時之橫向區域或大小。因為經修改目標121之位置及經修改目標121之大小取決於目標材料120如何與第一輻射光束110相互作用，所以藉由控制自第一輻射光束110施加至目標材料120之放射曝光量，吾人可控制經修改目標121之擴張率，且因此，吾人可控制此兩種因素。以此方式，可藉由控制放射曝光量而使轉換效率穩定或控制轉換效率(1220)，因此，此情形使由電漿129產生之EUV能量穩定(1225)。 The power or energy of the EUV light 130 is stabilized by controlling the amount of radiation exposure (1225). The EUV energy (or power) produced by the plasma 129 depends on at least two functions, the first function being the conversion efficiency CE and the second function being the energy of the second radiation beam 115. The conversion efficiency is a percentage of the modified target 121 that is converted by the second radiation beam 115 into a plasma 129. The conversion efficiency depends on a number of variables, including the peak power of the second radiation beam 115, the size of the modified target 121 as it interacts with the second radiation beam 115, and the modified target 121. The lateral region or size of the second radiation beam 115 as it interacts with the modified target 121 at the desired location. Since the position of the modified target 121 and the size of the modified target 121 depend on how the target material 120 interacts with the first radiation beam 110, by controlling the amount of radiation exposure applied from the first radiation beam 110 to the target material 120, The rate of expansion of the modified target 121 can be controlled, and therefore, we can control both of these factors. In this way, the conversion efficiency can be stabilized or controlled by controlling the amount of radiation exposure (1220), and thus, the EUV energy generated by the plasma 129 is stabilized (1225).

亦參看圖13，在一些實施中，第一輻射光束110可由光學源105內之專用子系統1305A產生，且第二輻射光束115可由光學源105內之專用及分離子系統1305B產生，使得該等輻射光束110、115遵循在至各別第一目標部位111及第二目標部位116之道路上的兩個分離路徑。以此方式，輻射光束110、115中之每一者行進通過光束遞送系統150之各別子系統，且因此，其行進通過各別及分離光學操縱組件1352A、1352B及聚焦總成1356A、1356B。 Referring also to Figure 13, in some implementations, the first radiation beam 110 can be generated by a dedicated subsystem 1305A within the optical source 105, and the second radiation beam 115 can be generated by a dedicated and separate subsystem 1305B within the optical source 105 such that such The radiation beams 110, 115 follow two separate paths on the road to the respective first target site 111 and second target site 116. In this manner, each of the radiation beams 110, 115 travels through respective subsystems of the beam delivery system 150, and thus, travels through separate and separate optical manipulation components 1352A, 1352B and focusing assemblies 1356A, 1356B.

舉例而言，子系統1305A可為基於固態增益介質之系統，而子系統1305B可為基於氣體增益介質(諸如由CO₂放大器產生之氣體增益介質)之系統。可用作子系統1305A之例示性固態增益介質包括摻鉺光纖雷射及摻釹釔鋁石榴石(Nd：YAG)雷射。在此實例中，第一輻射光束110之波長可相異於第二輻射光束115之波長。舉例而言，使用固態增益介質之第一輻射光束110之波長可為約1微米(例如，約1.06微米)，且使用氣體介質之第二輻射光束115之波長可為約10.6微米。 For example, subsystem 1305A may be based on the system of a solid-state gain media, but may be based subsystem 1305B gaseous gain medium (such as a gaseous gain medium of the CO ₂ produced an amplifier) of the system. Exemplary solid-state gain media that can be used as subsystem 1305A include erbium-doped fiber lasers and ytterbium-doped aluminum garnet (Nd:YAG) lasers. In this example, the wavelength of the first radiation beam 110 can be different from the wavelength of the second radiation beam 115. For example, the first radiation beam 110 using a solid state gain medium can have a wavelength of about 1 micron (e.g., about 1.06 microns), and the second radiation beam 115 using a gaseous medium can have a wavelength of about 10.6 microns.

其他實施處於以下申請專利範圍之範疇內。 Other implementations are within the scope of the following patent application.

105‧‧‧光學源 105‧‧‧Optical source

111‧‧‧第一目標部位 111‧‧‧First target site

115‧‧‧第二輻射光束 115‧‧‧second radiation beam

116‧‧‧第二目標部位 116‧‧‧second target site

120‧‧‧目標材料 120‧‧‧Target material

129‧‧‧電漿 129‧‧‧ Plasma

145‧‧‧光學裝置 145‧‧‧Optical device

150‧‧‧光束遞送系統 150‧‧‧beam delivery system

152‧‧‧光學操縱組件 152‧‧‧Optical control components

155‧‧‧量測系統 155‧‧‧Measurement system

156‧‧‧聚焦總成 156‧‧‧ Focus assembly

160‧‧‧控制系統 160‧‧‧Control system

165‧‧‧腔室 165‧‧ ‧ chamber

180‧‧‧光束調整系統 180‧‧‧beam adjustment system

Claims

一種方法，其包含：提供一目標材料，該目標材料包含當轉換成電漿時發射極紫外線(EUV)光之一組份；將一第一輻射光束導引朝向該目標材料以將能量遞送至該目標材料，以修改該目標材料之一幾何分佈以形成一經修改目標；將一第二輻射光束導引朝向該經修改目標，該第二輻射光束將該經修改目標之至少部分轉換成發射EUV光之電漿；量測相對於該第一輻射光束的與該目標材料及該經修改目標中之一或多者相關聯的一或多個特性；及基於該一或多個經量測特性將自該第一輻射光束遞送至該目標材料之一放射曝光量控制在一預定能量範圍內。 A method comprising: providing a target material comprising one component of emitter ultraviolet (EUV) light when converted to a plasma; directing a first radiation beam toward the target material to deliver energy to The target material is modified to geometrically distribute one of the target materials to form a modified target; directing a second radiation beam toward the modified target, the second radiation beam converting at least a portion of the modified target into a transmitted EUV a plasma of light; measuring one or more characteristics associated with one or more of the target material and the modified target relative to the first radiation beam; and based on the one or more measured characteristics The amount of radiation exposure delivered from the first radiation beam to the target material is controlled within a predetermined energy range.

如請求項1之方法，其中量測與該目標材料及該經修改目標中之一或多者相關聯的該一或多個特性包含：量測該第一輻射光束之一能量。 The method of claim 1, wherein measuring the one or more characteristics associated with one or more of the target material and the modified target comprises measuring energy of one of the first radiation beams.

如請求項2之方法，其中量測該第一輻射光束之該能量包含：量測自該目標材料之一光學反射表面反射的該第一輻射光束之該能量，或量測導引朝向該目標材料之該第一輻射光束之一能量。 The method of claim 2, wherein measuring the energy of the first radiation beam comprises: measuring the energy of the first radiation beam reflected from an optically reflective surface of the target material, or measuring the orientation toward the target The energy of one of the first radiation beams of the material.

如請求項2之方法，其中量測該第一輻射光束之該能量包含：量測橫越垂直於該第一輻射光束之一傳播方向的一方向之一空間積分能量。 The method of claim 2, wherein measuring the energy of the first radiation beam comprises measuring a spatially integrated energy traversing one direction perpendicular to a direction of propagation of the first radiation beam.

如請求項4之方法，其中將該第一輻射光束導引朝向該目標材料包含：使該目標材料與該第一輻射光束之涵蓋其共焦參數之一區域重疊。 The method of claim 4, wherein directing the first radiation beam toward the target material comprises: causing the target material and the first radiation beam to cover one of its confocal parameters The areas overlap.

如請求項1之方法，其中量測與該目標材料及該經修改目標中之一或多者相關聯的該一或多個特性包含：量測該目標材料相對於一目標位置之一位置。 The method of claim 1, wherein measuring the one or more characteristics associated with the one or more of the target material and the modified target comprises measuring a position of the target material relative to a target location.

如請求項6之方法，其中沿著一第一光束軸線來導引該第一輻射光束，且沿著平行於該第一光束軸線之一方向量測該目標材料之該位置。 The method of claim 6 wherein the first radiation beam is directed along a first beam axis and the location of the target material is measured in a direction parallel to one of the first beam axes.

如請求項6之方法，其中量測該目標材料之該位置包含：沿著兩個或多於兩個非平行方向量測該目標材料之該位置。 The method of claim 6, wherein measuring the location of the target material comprises measuring the location of the target material along two or more than two non-parallel directions.

如請求項1之方法，其中量測與該目標材料及該經修改目標中之一或多者相關聯的該一或多個特性包含如下操作中的一或多者：在該第二輻射光束將該經修改目標之至少部分轉換成電漿之前偵測該經修改目標之一大小；及估計該經修改目標之一擴張率。 The method of claim 1, wherein the one or more characteristics associated with one or more of the target material and the modified target comprise one or more of the following: at the second radiation beam Detecting a size of one of the modified targets before converting at least a portion of the modified target into a plasma; and estimating an expansion rate of the modified target.

如請求項1之方法，其中基於該一或多個經量測特性控制自該第一輻射光束遞送至該目標材料之該放射曝光量包含：控制該經修改目標之一擴張率。 The method of claim 1, wherein controlling the amount of radiation exposure delivered from the first radiation beam to the target material based on the one or more measured characteristics comprises controlling an expansion rate of the modified target.

如請求項1之方法，其中基於該一或多個經量測特性控制自該第一輻射光束遞送至該目標材料之該放射曝光量包含：基於該一或多個經量測特性判定是否應調整該第一輻射光束之一特徵。 The method of claim 1, wherein the controlling the amount of radiation exposure delivered from the first radiation beam to the target material based on the one or more measured characteristics comprises determining whether based on the one or more measured characteristics One of the characteristics of the first radiation beam is adjusted.

如請求項11之方法，其中若判定出應調整該第一輻射光束之該特徵，則調整如下各者中之一或多者：該第一輻射光束之一脈衝之一能量含量；及該第一輻射光束與該目標材料相互作用之一面積。 The method of claim 11, wherein if it is determined that the feature of the first radiation beam should be adjusted, adjusting one or more of: one of the first radiation beams and one of the energy content; and the first An area of radiation that interacts with the target material.

如請求項12之方法，其中調整該第一輻射光束之該脈衝之該能量含量包括如下操作中的一或多者：調整該第一輻射光束之一脈衝之一寬度；調整該第一輻射光束之一脈衝之一持續時間；及調整該第一輻射光束之一脈衝內之一平均功率。 The method of claim 12, wherein the adjusting the energy of the pulse of the first radiation beam The amount content includes one or more of the following: adjusting a width of one of the pulses of the first radiation beam; adjusting a duration of one of the pulses of the first radiation beam; and adjusting one of the pulses of the first radiation beam One of the average power.

如請求項11之方法，其中：將該第一輻射光束導引朝向該目標材料包含將第一輻射之脈衝導引朝向該目標材料；量測該一或多個特性包含針對第一輻射之每一脈衝量測該一或多個特性；及判定是否應調整該第一輻射光束之該特徵包含針對第一輻射之每一脈衝判定是否應調整該特徵。 The method of claim 11, wherein: directing the first radiation beam toward the target material comprises directing a pulse of the first radiation toward the target material; measuring the one or more characteristics comprises for each of the first radiation Measuring the one or more characteristics by a pulse; and determining whether the characteristic of the first radiation beam should be adjusted comprises determining whether the characteristic should be adjusted for each pulse of the first radiation.

如請求項1之方法，其中：提供該目標材料包含提供目標材料之一小滴；修改該目標材料之該幾何分佈包含將該目標材料之該小滴變換成熔融金屬之一圓盤形體積；及根據一擴張率將該目標材料小滴變換成該圓盤形體積。 The method of claim 1, wherein: providing the target material comprises providing a droplet of the target material; modifying the geometrical distribution of the target material comprises transforming the droplet of the target material into a disc-shaped volume of one of the molten metal; And converting the target material droplet into the disc-shaped volume according to an expansion ratio.

如請求項1之方法，其中將該第一輻射光束導引朝向該目標材料亦將該目標材料之一部分轉換成發射EUV光之電漿，其中相比於自轉換自該經修改目標的該電漿發射之EUV光，自轉換自該目標材料的該電漿發射較少EUV光，且對該目標材料之主要作用為該修改該目標材料之該幾何分佈以形成該修改目標。 The method of claim 1, wherein directing the first radiation beam toward the target material also partially converts one of the target materials into a plasma that emits EUV light, wherein the electricity is self-converted from the modified target The pulp-emitted EUV light emits less EUV light from the plasma converted from the target material, and the primary effect on the target material is to modify the geometric distribution of the target material to form the modified target.

如請求項1之方法，其中：修改該目標材料之該幾何分佈包含將該目標材料之一形狀變換成該經修改目標，其包括根據一擴張率沿著至少一個軸線來擴張該經修改目標；且控制遞送至該目標材料之該放射曝光量包含控制該目標材料至該經修改目標之該擴張率。 The method of claim 1, wherein: modifying the geometrical distribution of the target material comprises transforming one of the target materials into the modified target, comprising expanding the modified target along at least one axis according to an expansion rate; And controlling the amount of radiation exposure delivered to the target material comprises controlling the target material The rate of expansion to the modified target.

如請求項17之方法，其中沿著不平行於該第二輻射光束之光軸的該至少一個軸線來擴張該經修改目標。 The method of claim 17, wherein the modified target is expanded along the at least one axis that is not parallel to the optical axis of the second radiation beam.

如請求項1之方法，其中：量測與該目標材料及該經修改目標中之一或多者相關聯的一或多個特性包含量測導引朝向該目標材料之該第一輻射光束之一能量；控制遞送至該目標材料之該放射曝光量包含基於該經量測能量而調整自該第一輻射光束導引至該目標材料的能量之一量；且將該第一輻射光束導引朝向該目標材料包含使該目標材料與該第一輻射光束之涵蓋其共焦參數之一區域重疊。 The method of claim 1, wherein: measuring one or more characteristics associated with one or more of the target material and the modified target comprises measuring the first radiation beam directed toward the target material An amount of radiation that controls delivery to the target material includes adjusting an amount of energy directed from the first radiation beam to the target material based on the measured energy; and directing the first radiation beam Orienting the target material includes overlapping the target material with a region of the first radiation beam that covers one of its confocal parameters.

如請求項19之方法，其中調整自該第一輻射光束導引至該目標材料之能量之該量包含：調整該第一輻射光束之一屬性。 The method of claim 19, wherein adjusting the amount of energy directed from the first radiation beam to the target material comprises adjusting an attribute of the first radiation beam.

如請求項1之方法，其中控制自該第一輻射光束遞送至該目標材料之該放射曝光量包含如下操作中的一或多者：恰好在該第一輻射光束將一能量遞送至該目標材料之前調整該第一輻射光束之該能量；調整該目標材料之一位置；及調整與該第一輻射光束相互作用的該目標材料之一區。 The method of claim 1, wherein controlling the amount of radiation exposure delivered from the first radiation beam to the target material comprises one or more of the following: transmitting the energy to the target material just at the first radiation beam Adjusting the energy of the first radiation beam; adjusting a position of the target material; and adjusting a region of the target material that interacts with the first radiation beam.

一種裝置，其包含：一腔室，其界定接收一第一輻射光束之一初始目標部位及接收一第二輻射光束之一目標部位；一目標材料遞送系統，其經組態以將目標材料提供至該初始目標部位，該目標材料包含當轉換成電漿時發射極紫外線(EUV)光之一材料；一光學源，其經組態以產生該第一輻射光束及該第二輻射光束；一光學操縱系統，其經組態以：將該第一輻射光束導引朝向該初始目標部位以將能量遞送至該目標材料，以修改該目標材料之一幾何分佈以形成一經修改目標；及將該第二輻射光束導引朝向該目標部位，以將該經修改目標之至少部分轉換成發射EUV光之電漿；一量測系統，其量測相對於該第一輻射光束的與該目標材料及該經修改目標中之一或多者相關聯的一或多個特性；及一控制系統，其連接至該目標材料遞送系統、該光學源、該光學操縱系統及該量測系統，且經組態以自該量測系統接收該一或多個經量測特性，且基於該一或多個經量測特性將一或多個信號發送至該光學源以控制自該第一輻射光束遞送至該目標材料的一放射曝光量。 A device comprising: a chamber defining an initial target portion for receiving a first radiation beam and receiving a target portion of a second radiation beam; a target material delivery system configured to provide a target material Up to the initial target site, the target material comprises one of ultraviolet-emitting ultraviolet (EUV) light when converted into a plasma; an optical source configured to generate the first radiation beam and the second radiation An optical manipulation system configured to: direct the first radiation beam toward the initial target site to deliver energy to the target material to modify a geometrical distribution of the target material to form a modified target; And directing the second radiation beam toward the target portion to convert at least a portion of the modified target into a plasma that emits EUV light; a measurement system that measures the relative to the first radiation beam One or more characteristics associated with one or more of the target material and the modified target; and a control system coupled to the target material delivery system, the optical source, the optical manipulation system, and the measurement system, And configured to receive the one or more measured characteristics from the measurement system and to transmit one or more signals to the optical source based on the one or more measured characteristics to control the first radiation The beam is delivered to a radiation exposure of the target material.

如請求項22之裝置，其中該光學操縱系統包含一聚焦裝置，該聚焦裝置經組態以將該第一輻射光束聚焦於該初始目標部位處或附近，且將該第二輻射光束聚焦於該目標部位處或附近。 The apparatus of claim 22, wherein the optical manipulation system includes a focusing device configured to focus the first radiation beam at or near the initial target location and focus the second radiation beam on the At or near the target site.

如請求項22之裝置，其進一步包含一光束調整系統，其中該光束調整系統連接至該光學源及該控制系統，且該控制系統經組態以藉由將一或多個信號發送至該光束調整系統來將一或多個信號發送至該光學源以控制遞送至該目標材料之能量之量，該光束調整系統經組態以調整該光學源之一或多個特徵以藉此維持遞送至該目標材料之能量之該量。 The apparatus of claim 22, further comprising a beam conditioning system, wherein the beam conditioning system is coupled to the optical source and the control system, and the control system is configured to transmit one or more signals to the beam Adjusting a system to send one or more signals to the optical source to control an amount of energy delivered to the target material, the beam conditioning system configured to adjust one or more features of the optical source to thereby maintain delivery to The amount of energy of the target material.

如請求項24之裝置，其中該光束調整系統包含耦合至該第一輻射光束之一脈寬調整系統，該脈寬調整系統經組態以調整該第一輻射光束之脈衝之一脈寬。 The apparatus of claim 24, wherein the beam conditioning system includes a pulse width adjustment system coupled to the first radiation beam, the pulse width adjustment system configured to adjust a pulse width of the pulse of the first radiation beam.

如請求項25之裝置，其中該脈寬調整系統包含一電光調變器。 The device of claim 25, wherein the pulse width adjustment system comprises an electro-optic modulator.

如請求項24之裝置，其中該光束調整系統包含耦合至該第一輻射光束之一脈衝功率調整系統，該脈衝功率調整系統經組態以調整該第一輻射光束之脈衝內之一平均功率。 The apparatus of claim 24, wherein the beam conditioning system includes a pulse power adjustment system coupled to the first radiation beam, the pulse power adjustment system configured to adjust an average power within a pulse of the first radiation beam.

如請求項27之裝置，其中該脈衝功率調整系統包含一聲光調變器。 The device of claim 27, wherein the pulse power adjustment system comprises an acousto-optic modulator.

如請求項24之裝置，其中該光束調整系統經組態以藉由將一或多個信號發送至該光束調整系統來將一或多個信號發送至該光學源以控制導引至該目標材料的能量之該量，該光束調整系統經組態以調整該光學源之一或多個特徵以藉此控制導引至該目標材料之能量之該量。 The apparatus of claim 24, wherein the beam conditioning system is configured to transmit one or more signals to the optical source to control the guidance to the target material by transmitting one or more signals to the beam conditioning system The amount of energy, the beam adjustment system is configured to adjust one or more features of the optical source to thereby control the amount of energy directed to the target material.

如請求項22之裝置，其中該光學源包含：光學組件之一第一集合，其包括該第一輻射光束經傳遞通過之一或多個光學放大器之一第一集合；及光學組件之一第二集合，其包括該第二輻射光束經傳遞通過之一或多個光學放大器之一第二集合。 The device of claim 22, wherein the optical source comprises: a first set of one of the optical components, the first radiation beam being passed through a first set of one or more optical amplifiers; and one of the optical components A second set comprising the second radiation beam passed through a second set of one or more optical amplifiers.

如請求項30之裝置，其中該第一集合中之該等光學放大器中之至少一者處於該第二集合中。 The device of claim 30, wherein at least one of the optical amplifiers in the first set is in the second set.

如請求項30之裝置，其中光學組件之該第一集合與光學組件之該第二集合相異且與其分離。 The device of claim 30, wherein the first set of optical components is distinct from and separate from the second set of optical components.

如請求項30之裝置，其中：該量測系統在該第一輻射光束經導引朝向該初始目標部位時量測該第一輻射光束之一能量；且該控制系統經組態以自該量測系統接收該經量測能量，且基於該經量測能量將一或多個信號發送至該光學源以控制自該第一輻射光束導引至該目標材料的能量之一量。 The device of claim 30, wherein: the measurement system measures energy of the first radiation beam when the first radiation beam is directed toward the initial target portion; and the control system is configured to The measurement system receives the measured energy and transmits one or more signals to the optical source based on the measured energy to control an amount of energy directed from the first radiation beam to the target material.