TW201714707A - Mixing type chemical mechanical polishing conditioner capable of providing excellent cutting force through disposition of the second polishing unit - Google Patents

Mixing type chemical mechanical polishing conditioner capable of providing excellent cutting force through disposition of the second polishing unit Download PDF

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Publication number
TW201714707A
TW201714707A TW104135197A TW104135197A TW201714707A TW 201714707 A TW201714707 A TW 201714707A TW 104135197 A TW104135197 A TW 104135197A TW 104135197 A TW104135197 A TW 104135197A TW 201714707 A TW201714707 A TW 201714707A
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polishing
chemical mechanical
mechanical polishing
unit
hybrid chemical
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TW104135197A
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Chinese (zh)
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TWI623382B (en
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周瑞麟
邱家豐
陳裕泰
廖文仁
蘇學紳
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中國砂輪企業股份有限公司
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Priority to TW104135197A priority Critical patent/TWI623382B/en
Priority to CN201610550352.3A priority patent/CN106607759B/en
Priority to US15/238,177 priority patent/US20170113321A1/en
Publication of TW201714707A publication Critical patent/TW201714707A/en
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Publication of TWI623382B publication Critical patent/TWI623382B/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A mixing type chemical mechanical polishing conditioner comprises a base, a first polishing unit and a plurality of second polishing units. The first polishing unit includes a first combination layer, a polishing unit substrate disposed on the first combination layer and a polishing layer disposed on the polishing unit substrate. The polishing layer is a diamond coated film. The surface of the diamond coated layer has a plurality of polishing tips. The second polishing unit includes a second combination layer, a carrying post disposed on the second combination layer, a polishing particle disposed on the carrying post, and an abrasive combination layer disposed between the carrying post and the polishing particle. By utilizing the first polishing unit with the polishing layer and the second polishing unit with the polishing particle, the chemical mechanical polishing conditioner is provided with excellent cutting force and flattening capability.

Description

混合式化學機械研磨修整器Hybrid chemical mechanical polishing dresser

本發明為有關一種化學機械研磨修整器，尤指一種混合式化學機械研磨修整器。The invention relates to a chemical mechanical polishing dresser, in particular to a hybrid chemical mechanical polishing dresser.

化學機械研磨(Chemical Mechanical Polishing，簡稱CMP)是一種廣泛用於半導體製程中的平坦化技術，常見的化學機械研磨製程為使用一固定在一旋轉台的研磨墊(或拋光墊)，接觸並施力於一承載在一可自旋之載具上的矽晶圓，於研磨時，該載具與該旋轉台將進行轉動且提供一研磨漿料至該研磨墊。一般而言，研磨所造成的碎屑與研磨漿料將累積在研磨墊中的孔洞，令研磨墊產生耗損且導致其對於晶圓的研磨效果下降，因此，係需要使用一修整器(Conditioner)移除研磨墊中殘留的碎屑與研磨漿料。Chemical Mechanical Polishing (CMP) is a flattening technology widely used in semiconductor manufacturing. A common chemical mechanical polishing process uses a polishing pad (or polishing pad) fixed to a rotating table to contact and apply. The crucible wafer is carried on a spin-on carrier. During the grinding, the carrier and the rotary table will rotate and provide a polishing slurry to the polishing pad. In general, the debris and abrasive slurry caused by the grinding will accumulate in the holes in the polishing pad, causing the polishing pad to wear out and causing the polishing effect on the wafer to be reduced. Therefore, it is necessary to use a Conditioner. Remove debris and abrasive slurry from the polishing pad.

為了使修整器可結合各種不同種類、尺寸、形狀的研磨材料，遂有提出混合式修整器者，例如中華民國發明專利公告第I383860號，揭示一種組合式修整器，包括一大基板，設有一結合面、一底面及複數穿透孔或複數容置槽；複數研磨單元，分別具有複數磨粒；複數磨粒分別具有複數切削端；複數穿透孔或複數容置槽分別容置複數研磨單元，複數切削端分別突出結合面；複數研磨單元與大基板之間藉由結合劑固定結合；複數磨粒的複數切削端分別與一平面的高度差異在20微米內；較容易使大面積組合式修整器的多數磨粒的切削端在同一高度，可視需要變化不同的磨粒，且製作複數小的研磨單元再組合成一大面積修整器的成本較低。In order to enable the dresser to be combined with various types, sizes and shapes of abrasive materials, a hybrid dresser has been proposed, such as the Republic of China Invention Patent Publication No. I383860, which discloses a combined dresser comprising a large substrate, provided with a a bonding surface, a bottom surface and a plurality of through holes or a plurality of receiving grooves; the plurality of grinding units respectively have a plurality of abrasive grains; the plurality of abrasive grains respectively have a plurality of cutting ends; and the plurality of through holes or the plurality of receiving grooves respectively accommodate the plurality of grinding units The plurality of cutting ends respectively protrude the bonding surface; the plurality of grinding units and the large substrate are fixedly bonded by the bonding agent; the difference between the plurality of cutting ends of the plurality of abrasive grains and the height of one plane is within 20 micrometers; The cutting ends of most of the abrasive grains of the dresser are at the same height, and different abrasive grains can be changed as needed, and the cost of making a plurality of small grinding units and then combining them into a large-area dresser is low.

中華民國發明專利公告第I374792號，揭示一種具有拼圖式研磨片段的CMP拋光墊修整器及其相關方法，包括複數研磨片段以及一拋光墊修整器基材，各研磨片段具有一片段基質以及一附著於該片段基質的研磨層，該研磨層包括超硬研磨材料，其係為多晶鑽石(PCD)刀片及獨立的研磨顆粒，各研磨片段永久地以一方向附著在該拋光墊修整器基材，以使得在該拋光墊修整器與該CMP拋光墊相對移動時，能夠藉由該研磨層將材料自CMP拋光墊移除。The Republic of China Invention Patent Publication No. I374792 discloses a CMP pad dresser having a puzzled abrasive segment and related methods, including a plurality of abrasive segments and a polishing pad conditioner substrate, each of the abrasive segments having a segment substrate and an attachment In the abrasive layer of the segment substrate, the abrasive layer comprises a superhard abrasive material, which is a polycrystalline diamond (PCD) blade and independent abrasive particles, each abrasive segment being permanently attached to the polishing pad conditioner substrate in one direction So that the material can be removed from the CMP polishing pad by the polishing layer as the polishing pad conditioner moves relative to the CMP pad.

中華民國發明專利公告第I388398號，揭示一種具有混合研磨表面的CMP拋光墊修整器及其相關方法，包括複數刀片狀研磨片段、複數顆粒狀研磨片段以及一拋光墊修整器基材，該刀片研磨片段包括一刀片狀研磨基質以及一附著於該刀片狀研磨基質的研磨層，該研磨層包括一超硬研磨材料，該顆粒狀研磨片段包括一顆粒狀研磨基質及一附著於該顆粒狀研磨基質的研磨層，該研磨層包括複數超研磨顆粒，該刀片狀研磨片段及該顆粒狀研磨片段係以交替的圖案固定於該拋光墊修整器基材上，以能夠在該拋光墊修整器以及該CMP拋光墊相互移動時將材料從CMP拋光墊上移除。上述先前技術均揭示具有兩種研磨結構的混合式拋光墊修整器，然其均是非連續性的間斷研磨片段結構，故修整能力仍有待改進。The Republic of China Invention Patent Publication No. I388398 discloses a CMP pad dresser having a hybrid abrasive surface and related methods, including a plurality of blade-shaped abrasive segments, a plurality of granular abrasive segments, and a polishing pad conditioner substrate, the blade grinding The segment includes a blade-shaped abrasive substrate and an abrasive layer attached to the blade-shaped abrasive substrate, the abrasive layer comprising a superabrasive abrasive material, the particulate abrasive segment comprising a particulate abrasive matrix and an attached to the particulate abrasive matrix An abrasive layer comprising a plurality of superabrasive particles, the blade-shaped abrasive segments and the particulate abrasive segments being fixed to the polishing pad conditioner substrate in an alternating pattern to enable the polishing pad conditioner and the The material is removed from the CMP pad while the CMP pad moves relative to each other. The above prior art discloses a hybrid pad dresser having two kinds of grinding structures, which are all discontinuous intermittent grinding segment structures, so the dressing ability still needs to be improved.

此外，本案申請人所提出申請的中華民國發明專利申請第104105264號，揭示一種化學機械研磨修整器，包含一基座、複數修整柱以及複數滑塊，該基座的表面劃分為呈同心圓之一中心表面與一外圍表面，該中心表面內凹為內凹部，該外圍表面環繞該中心表面並內凹形成有複數裝設孔，各該修整柱對應地裝設於該裝設孔中並包含一柱體與一磨料，該磨料裝設於該柱體表面，該滑塊設於該外圍表面並散布於該裝設孔之間，各滑塊具有一滑塊修整面。前述之先前技術中，該滑塊具有平滑或非平滑之滑塊修整面，而該滑塊修整面上可鍍覆鑽石膜或類鑽碳膜，而無論是鑽石膜或類鑽碳膜，均缺乏研磨尖端，因此，其修整能力仍有不足之處。In addition, the Chinese Patent Application No. 104105264 filed by the applicant of the present application discloses a chemical mechanical polishing dresser comprising a base, a plurality of trimming columns and a plurality of sliders, the surface of which is divided into concentric circles. a central surface and a peripheral surface, the central surface is recessed as an inner recess, the peripheral surface surrounding the central surface and recessed to form a plurality of mounting holes, each of the trimming columns being correspondingly mounted in the mounting hole and including a cylinder and an abrasive, the abrasive is mounted on the surface of the cylinder, the slider is disposed on the peripheral surface and interspersed between the mounting holes, and each slider has a slider finishing surface. In the foregoing prior art, the slider has a smooth or non-smooth slider trim surface, and the slider trim surface can be coated with a diamond film or a diamond-like carbon film, whether it is a diamond film or a diamond-like carbon film. Lack of abrasive tips, so there is still a lack of finishing ability.

本發明的主要目的，在於解決習知混合式化學機械研磨修整器，修整能力不足之問題。The main object of the present invention is to solve the problem of insufficient finishing ability of the conventional hybrid chemical mechanical polishing dresser.

為達上述目的，本發明提供一種混合式化學機械研磨修整器，包括一基座、一第一研磨單元以及複數個第二研磨單元，該第一研磨單元設置於該基座上，且包括固定於該基座上的一第一結合層、設置於該第一結合層上的一研磨單元基板以及設置於該研磨單元基板上的一研磨層，該研磨層係利用一化學氣相沉積法所形成的一鑽石鍍膜，且該鑽石鍍膜表面具有複數個研磨尖端，該第二研磨單元設置於該基座上，分別包括固定於該基座上的一第二結合層、設置於該第二結合層上的一承載柱、設置於該承載柱上的一研磨顆粒以及設置於該承載柱和該研磨顆粒之間的一磨料結合層。To achieve the above objective, the present invention provides a hybrid chemical mechanical polishing conditioner comprising a base, a first polishing unit and a plurality of second polishing units, the first polishing unit being disposed on the base and including a fixing a first bonding layer on the pedestal, a polishing unit substrate disposed on the first bonding layer, and a polishing layer disposed on the polishing unit substrate, wherein the polishing layer is formed by a chemical vapor deposition method a diamond coating is formed, and the diamond coating surface has a plurality of polishing tips, and the second polishing unit is disposed on the base, and includes a second bonding layer fixed on the base, and is disposed on the second bonding a carrier column on the layer, an abrasive particle disposed on the carrier column, and an abrasive bonding layer disposed between the carrier column and the abrasive particle.

於一實施例中，該基座的表面具有一中心區域及一外環區域，該外環區域係環繞於該中心區域的外側。In one embodiment, the surface of the base has a central region and an outer ring region that surrounds the outer side of the central region.

於一實施例中，該中心區域具有供該第一研磨單元設置的一凹陷部，該外環區域具有相隔排列並容置該第二研磨單元的複數個第一容置部。In one embodiment, the central region has a recess for the first polishing unit, and the outer ring region has a plurality of first receiving portions that are spaced apart and accommodate the second polishing unit.

於一實施例中，該中心區域具有相隔排列並容置該第二研磨單元的複數個第二容置部，該外環區域具有供該第一研磨單元設置的一凹陷部。In one embodiment, the central region has a plurality of second accommodating portions arranged to be spaced apart and accommodating the second polishing unit, the outer ring region having a recess portion provided for the first polishing unit.

於一實施例中，該中心區域及該外環區域具有供該第一研磨單元設置的一凹陷部，該基座還包括複數個設置於該第一研磨單元並容置該第二研磨單元的複數個第三容置部。In one embodiment, the central region and the outer ring region have a recess for the first polishing unit, and the base further includes a plurality of the first polishing unit and the second polishing unit. A plurality of third accommodating portions.

於一實施例中，該基座的表面更包括一內環區域，該內環區域係環繞於該中心區域的內側，且該內環區域具有相隔排列並容置該第二研磨單元的複數個第四容置部。In an embodiment, the surface of the pedestal further includes an inner ring region surrounding the inner side of the central region, and the inner ring region has a plurality of spaced apart and accommodating the second grinding unit The fourth housing part.

於一實施例中，該些容置部係為一貫通孔結構或一內凹孔結構。In an embodiment, the accommodating portions are a through hole structure or a concave hole structure.

於一實施例中，該中心區域具有供該第一研磨單元設置的一凹陷部。In an embodiment, the central region has a recess for the first polishing unit.

於一實施例中，該基座係一平面基板。In one embodiment, the base is a planar substrate.

於一實施例中，該第二研磨單元具有一圖案化排列，該圖案化排列擇自於相同間距排列、不同間距排列、單圈環狀排列及多圈環狀排列所組成之群組。In one embodiment, the second polishing unit has a patterned arrangement selected from the group consisting of the same pitch arrangement, the different pitch arrangement, the single ring annular arrangement, and the multi-ring annular arrangement.

於一實施例中，該些第二研磨單元的數量介於2至300之間。In an embodiment, the number of the second grinding units is between 2 and 300.

於一實施例中，該研磨顆粒擇自於人造鑽石、天然鑽石、多晶鑽石及立方氮化硼所組成之群組。In one embodiment, the abrasive particles are selected from the group consisting of synthetic diamonds, natural diamonds, polycrystalline diamonds, and cubic boron nitride.

於一實施例中，該第一結合層、該第二結合層及該磨料結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。In one embodiment, the composition of the first bonding layer, the second bonding layer, and the abrasive bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials.

於一實施例中，該硬焊材料擇自於鐵、鈷、鎳、鉻、錳、矽、硼、碳及鋁所組成的群組。In one embodiment, the brazing material is selected from the group consisting of iron, cobalt, nickel, chromium, manganese, lanthanum, boron, carbon, and aluminum.

於一實施例中，該高分子材料擇自於環氧樹脂、聚脂樹脂、聚丙烯酸樹脂及酚醛樹脂所組成之群組。In one embodiment, the polymeric material is selected from the group consisting of epoxy resins, polyester resins, polyacrylic resins, and phenolic resins.

於一實施例中，該基座和該承載柱的材質擇自於不鏽鋼、金屬材料、塑膠材料及陶瓷材料所組成之群組。In one embodiment, the base and the material of the carrier column are selected from the group consisting of stainless steel, metal materials, plastic materials, and ceramic materials.

於一實施例中，該研磨單元基板的材料擇自於碳化矽、矽、多晶氧化鋁、單晶氧化鋁及鑽石所組成之群組。In one embodiment, the material of the polishing unit substrate is selected from the group consisting of niobium carbide, tantalum, polycrystalline alumina, single crystal alumina, and diamond.

於一實施例中，該研磨顆粒的粒徑介於500μm至1200μm之間。In one embodiment, the abrasive particles have a particle size between 500 μm and 1200 μm.

上述先前技術中，中華民國發明專利公告第I374792號、第I388398號所揭示的混合式拋光墊修整器，均是非連續性的間斷研磨片段結構，但本發明為具有連續性結構的該鑽石鍍膜(該第一研磨單元)配合間斷結構的該研磨顆粒(該第二研磨單元)，因此，本發明相較於先前技術，該鑽石鍍膜可提供高平坦度的研磨效果，降低拋光墊的表面粗糙度，而該研磨顆粒具有良好的切削力以及表面移除力，藉由將該鑽石鍍膜和該研磨顆粒整合於單一化學機械研磨修整器，使得該混合式化學機械研磨修整器同時具有優異的切削力和平坦化能力。In the above prior art, the hybrid polishing pad conditioner disclosed in the Republic of China Invention Patent Publication No. I374792 and No. I388398 is a discontinuous intermittent abrasive segment structure, but the present invention is a diamond coating having a continuous structure ( The first grinding unit) cooperates with the abrasive particles of the discontinuous structure (the second grinding unit). Therefore, compared with the prior art, the diamond coating can provide a high flatness grinding effect and reduce the surface roughness of the polishing pad. And the abrasive particles have good cutting force and surface removal force, and the hybrid chemical mechanical polishing dresser has excellent cutting force by integrating the diamond coating film and the abrasive particles into a single chemical mechanical polishing dresser. And flattening ability.

此外，本案申請人所提出申請的中華民國發明專利申請第104105264號，該滑塊修整面係缺乏研磨尖端，反觀，本發明透過該第二研磨單元的設置，可以提供良好的切削力。In addition, in the Republic of China invention patent application No. 104105264 filed by the applicant of the present application, the slider finishing surface lacks a grinding tip. In contrast, the present invention can provide a good cutting force through the arrangement of the second grinding unit.

有關本發明的詳細說明及技術內容，現就配合圖式說明如下：The detailed description and technical content of the present invention will now be described as follows:

請參閱『圖1』與『圖2』所示，分別為本發明第一實施例的俯視圖以及『圖1』的A-A方向剖面示意圖，如圖所示，本發明混合式化學機械研磨修整器，包括一基座10、一第一研磨單元20以及複數個第二研磨單元30，該第一研磨單元20包括一設置於該基座10上的第一結合層21、一設置於該第一結合層21上的研磨單元基板22以及一設置於該研磨單元基板22上的研磨層23，該第二研磨單元30分別包括一設置於該基座10上的第二結合層31、一設置於該第二結合層31上的承載柱32、一設置於該承載柱32上的研磨顆粒33以及一設置於該承載柱32和該研磨顆粒33之間的磨料結合層34。該研磨層23係利用一化學氣相沉積法所形成的一鑽石鍍膜，且該鑽石鍍膜表面具有複數個研磨尖端；該研磨顆粒33可選用人造鑽石、天然鑽石、多晶鑽石或立方氮化硼。於本發明之一實施例中，該研磨顆粒33的粒徑介於500μm至1200μm之間，該磨料結合層34可採用硬焊材料，例如含有不銹鋼粉末的硬焊材料。Please refer to FIG. 1 and FIG. 2, which are respectively a plan view of a first embodiment of the present invention and a cross-sectional view taken along line AA of FIG. 1 . As shown in the figure, the hybrid chemical mechanical polishing dresser of the present invention, The first polishing unit 20 includes a first bonding layer 21 disposed on the base 10, and a first bonding layer 20 disposed on the base 10. a polishing unit substrate 22 on the layer 21 and an abrasive layer 23 disposed on the polishing unit substrate 22, the second polishing unit 30 respectively includes a second bonding layer 31 disposed on the substrate 10, and a A support post 32 on the second bonding layer 31, an abrasive particle 33 disposed on the carrier post 32, and an abrasive bonding layer 34 disposed between the carrier post 32 and the abrasive particle 33. The polishing layer 23 is a diamond coating formed by a chemical vapor deposition method, and the diamond coating surface has a plurality of polishing tips; the abrasive particles 33 may be selected from synthetic diamonds, natural diamonds, polycrystalline diamonds or cubic boron nitride. . In one embodiment of the invention, the abrasive particles 33 have a particle size between 500 μm and 1200 μm, and the abrasive bonding layer 34 may be a brazing material such as a brazing material containing stainless steel powder.

於本發明中，該第一結合層21和該第二結合層31的材料可為陶瓷材料、硬焊材料、電鍍材料、金屬材料或高分子材料，較佳為採用高分子材料，其中，該硬焊材料可為鐵、鈷、鎳、鉻、錳、矽、鋁、硼、碳之金屬或合金，於一實施例中，該硬焊材料可採用Nicrobraz LM之合金，其成分為7 wt. %的Cr，3.1 wt. %的B，4.5 wt. %的Si，3.0 wt. %的Fe，0.06 wt%的C，其餘為Ni。該高分子材料可為環氧樹脂、聚脂樹脂、聚丙烯酸樹脂或酚醛樹脂，該第二結合層31較佳地為環氧樹脂，該研磨單元基板22的材料可為碳化矽、矽、多晶氧化鋁、單晶氧化鋁或鑽石。於本發明中，該基座10及/或該承載柱32較佳地為不鏽鋼材料，而該研磨單元基板22較佳地為採用碳化矽材料，但本發明並不以此為限，使用者可依需求而任意變化。In the present invention, the material of the first bonding layer 21 and the second bonding layer 31 may be a ceramic material, a brazing material, a plating material, a metal material or a polymer material, preferably a polymer material, wherein The brazing material may be iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, boron, carbon metal or alloy. In one embodiment, the brazing material may be an alloy of Nicrobraz LM with a composition of 7 wt. % Cr, 3.1 wt.% B, 4.5 wt.% Si, 3.0 wt.% Fe, 0.06 wt% C, and the balance Ni. The polymer material may be an epoxy resin, a polyester resin, a polyacryl resin or a phenolic resin. The second bonding layer 31 is preferably an epoxy resin. The material of the polishing unit substrate 22 may be tantalum carbide, niobium, or more. Crystalline alumina, single crystal alumina or diamond. In the present invention, the base 10 and/or the support post 32 are preferably made of stainless steel, and the polishing unit substrate 22 is preferably made of tantalum carbide material, but the invention is not limited thereto. Can be arbitrarily changed according to needs.

於本實施例中，該基座10的表面具有一中心區域11以及一圍繞該中心區域11的外側的外環區域12，該中心區域11具有一凹陷部111，該外環區域12具有相隔排列的複數個第一容置部40a，該第一研磨單元20設置於該凹陷部111，該第二研磨單元30設置於該第一容置部40a，於本實施例中，該第一容置部40a的數量為四個而呈對稱設置，且和該第二研磨單元30相互對應。如此一來，該第一研磨單元20即配置於該基座10的內圈部分，而該第二研磨單元30則配置於該基座10的外圈部分。In this embodiment, the surface of the susceptor 10 has a central region 11 and an outer ring region 12 surrounding the outer side of the central region 11. The central region 11 has a recessed portion 111, and the outer ring region 12 is spaced apart The first accommodating portion 40a is disposed in the recessed portion 111, and the second arranging unit 30 is disposed in the first accommodating portion 40a. In this embodiment, the first accommodating portion The number of the portions 40a is four and symmetrically arranged, and corresponds to the second polishing unit 30. In this way, the first polishing unit 20 is disposed on the inner ring portion of the base 10 , and the second polishing unit 30 is disposed on the outer ring portion of the base 10 .

請參閱『圖3』與『圖4』所示，分別為本發明第二實施例的俯視圖以及『圖3』的B-B方向剖面示意圖，於本實施例中，該中心區域11具有相隔排列的複數個第二容置部40b，而該凹陷部111設置於該外環區域12，使該第一研磨單元20配置於該基座10的外圈部分，而該第二研磨單元30配置於該基座10的內圈部分。請參閱『圖5』與『圖6』所示，分別為本發明第三實施例的俯視圖以及『圖5』的C-C方向剖面示意圖，於本實施例中，該凹陷部111設置於該基座10之一表面，即該中心區域11及該外環區域12具有該凹陷部111，而該基座10還包括複數個設置於該第一研磨單元20上的第三容置部40c，該第三容置部40c係貫穿該第一研磨單元20而用於供該第二研磨單元30設置於其中，於此實施例中，該凹陷部111為一和該第三容置部40c連通的單一凹陷結構。請參閱『圖7』與『圖8』所示，分別為本發明第四實施例的俯視圖以及『圖7』的D-D方向剖面示意圖，於本實施例中，該基座10的表面更具有一內環區域13，該內環區域13係環繞於該中心區域11的內側，且該內環區域13具有相隔排列的複數個第四容置部40d，該第四容置部40d亦用於容置該第二研磨單元30。於本發明中，該些容置部40a、40b、40c、40d可為一貫通孔結構或一內凹孔結構，而於本發明之一實施例中，最佳為該貫通孔結構。Referring to FIG. 3 and FIG. 4, respectively, a plan view of a second embodiment of the present invention and a cross-sectional view of the BB direction of FIG. 3 are shown. In this embodiment, the central region 11 has a plurality of spaced-apart arrays. a second accommodating portion 40b, wherein the recessed portion 111 is disposed in the outer ring region 12, the first polishing unit 20 is disposed on an outer ring portion of the susceptor 10, and the second polishing unit 30 is disposed at the base The inner ring portion of the seat 10. 5 and FIG. 6 are respectively a plan view of a third embodiment of the present invention and a CC cross-sectional view of FIG. 5, in which the recessed portion 111 is disposed on the base. One of the first surface, that is, the central portion 11 and the outer ring region 12 has the recessed portion 111, and the base 10 further includes a plurality of third receiving portions 40c disposed on the first polishing unit 20, the first The third accommodating portion 40c is inserted through the first polishing unit 20 for the second polishing unit 30 to be disposed therein. In this embodiment, the recess portion 111 is a single unit that communicates with the third accommodating portion 40c. Concave structure. Referring to FIG. 7 and FIG. 8 respectively, a top view of the fourth embodiment of the present invention and a cross-sectional view of the DD direction of FIG. 7 are respectively shown. In the embodiment, the surface of the pedestal 10 has a surface. The inner ring region 13 is surrounded by the inner side of the central region 11, and the inner ring region 13 has a plurality of fourth receiving portions 40d arranged in a row, and the fourth receiving portion 40d is also used for the inner ring region 13 The second grinding unit 30 is placed. In the present invention, the accommodating portions 40a, 40b, 40c, and 40d may be a through-hole structure or a concave-pore structure, and in one embodiment of the present invention, the through-hole structure is preferred.

以上所述及圖式所示之該些容置部40a、40b、40c、40d及該第二研磨單元30的數量與排列方式，均為舉例說明，然本發明並未侷限於此，本發明係可依據使用者的需求而任意變化。例如，該些容置部40a、40b、40c、40d及該第二研磨單元30的數量可介於2至300之間，且該些容置部40a、40b、40c、40d及該第二研磨單元30具有一圖案化排列，該圖案化排列可為相同間距排列、不同間距排列、單圈環狀排列、多圈環狀排列及前述組合。The number and arrangement of the accommodating portions 40a, 40b, 40c, and 40d and the second polishing unit 30 shown in the above drawings and drawings are all exemplified, but the present invention is not limited thereto, and the present invention is not limited thereto. The system can be arbitrarily changed according to the needs of the user. For example, the number of the accommodating portions 40a, 40b, 40c, 40d and the second polishing unit 30 may be between 2 and 300, and the accommodating portions 40a, 40b, 40c, 40d and the second grinding The unit 30 has a patterned arrangement, which may be arranged at the same pitch, arranged at different pitches, arranged in a single loop, arranged in a multi-turn, and in the foregoing combinations.

綜上所述，本發明相較先前技術的功效為，該鑽石鍍膜可提供高平坦度的研磨效果，降低拋光墊的表面粗糙度，而該研磨顆粒具有良好的切削力以及表面移除力，藉由將該鑽石鍍膜和該研磨顆粒整合於單一化學機械研磨修整器，使得該混合式化學機械研磨修整器同時具有優異的切削力和平坦化能力。In summary, the effect of the present invention over the prior art is that the diamond coating can provide a high flatness polishing effect and reduce the surface roughness of the polishing pad, and the abrasive particles have good cutting force and surface removal force. By integrating the diamond coating and the abrasive particles into a single chemical mechanical polishing conditioner, the hybrid chemical mechanical polishing conditioner has both excellent cutting force and flattening ability.

以上已將本發明做一詳細說明，惟以上所述者，僅爲本發明的一較佳實施例而已，當不能限定本發明實施的範圍。即凡依本發明申請範圍所作的均等變化與修飾等，皆應仍屬本發明的專利涵蓋範圍內。The present invention has been described in detail above, but the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. That is, the equivalent changes and modifications made by the scope of the present application should remain within the scope of the patent of the present invention.

10‧‧‧基座
11‧‧‧中心區域
111‧‧‧凹陷部
12‧‧‧外環區域
13‧‧‧內環區域
20‧‧‧第一研磨單元
21‧‧‧第一結合層
22‧‧‧研磨單元基板
23‧‧‧研磨層
30‧‧‧第二研磨單元
31‧‧‧第二結合層
32‧‧‧承載柱
33‧‧‧研磨顆粒
34‧‧‧磨料結合層
40a‧‧‧第一容置部
40b‧‧‧第二容置部
40c‧‧‧第三容置部
40d‧‧‧第四容置部10‧‧‧ Pedestal
11‧‧‧Central area
111‧‧‧Depression
12‧‧‧Outer Ring Area
13‧‧‧ Inner Ring Area
20‧‧‧First grinding unit
21‧‧‧ first bonding layer
22‧‧‧ Grinding unit substrate
23‧‧‧Abrasive layer
30‧‧‧Second grinding unit
31‧‧‧Second bonding layer
32‧‧‧Loading column
33‧‧‧Abrasive particles
34‧‧‧Abrasive bonding layer
40a‧‧‧First Housing Department
40b‧‧‧Second Accommodation
40c‧‧‧ Third Housing Department
40d‧‧‧Fourth Housing Department

【00028】 『圖1』，為本發明第一實施例的俯視圖。 『圖2』，為『圖1』的A-A方向剖面示意圖。 『圖3』，為本發明第二實施例的俯視圖。 『圖4』，為『圖3』的B-B方向剖面示意圖。 『圖5』，為本發明第三實施例的俯視圖。 『圖6』，為『圖5』的C-C方向剖面示意圖。 『圖7』，為本發明第四實施例的俯視圖。 『圖8』，為『圖7』的D-D方向剖面示意圖。[00028] FIG. 1 is a plan view showing a first embodiment of the present invention. "Fig. 2" is a schematic cross-sectional view of the A-A direction of Fig. 1. Fig. 3 is a plan view showing a second embodiment of the present invention. Figure 4 is a cross-sectional view of the B-B direction of Figure 3. Fig. 5 is a plan view showing a third embodiment of the present invention. Figure 6 is a cross-sectional view of the C-C direction of Figure 5. Fig. 7 is a plan view showing a fourth embodiment of the present invention. Figure 8 is a cross-sectional view of the D-D direction of Figure 7.

10‧‧‧基座 10‧‧‧ Pedestal

11‧‧‧中心區域 11‧‧‧Central area

111‧‧‧凹陷部 111‧‧‧Depression

12‧‧‧外環區域 12‧‧‧Outer Ring Area

20‧‧‧第一研磨單元 20‧‧‧First grinding unit

21‧‧‧第一結合層 21‧‧‧ first bonding layer

22‧‧‧研磨單元基板 22‧‧‧ Grinding unit substrate

23‧‧‧研磨層 23‧‧‧Abrasive layer

30‧‧‧第二研磨單元 30‧‧‧Second grinding unit

31‧‧‧第二結合層 31‧‧‧Second bonding layer

32‧‧‧承載柱 32‧‧‧Loading column

33‧‧‧研磨顆粒 33‧‧‧Abrasive particles

34‧‧‧磨料結合層 34‧‧‧Abrasive bonding layer

40a‧‧‧第一容置部 40a‧‧‧First Housing Department

Claims (18)

一種混合式化學機械研磨修整器，包括： 一基座； 一第一研磨單元，係設置於該基座上，且包括固定於該基座上的一第一結合層、設置於該第一結合層上的一研磨單元基板以及設置於該研磨單元基板上的一研磨層，該研磨層係利用化學氣相沉積法所形成的一鑽石鍍膜，且該鑽石鍍膜表面具有複數個研磨尖端；以及 複數個第二研磨單元，係設置於該基座上，且包括固定於該基座上的一第二結合層、設置於該第二結合層上的一承載柱、設置於該承載柱上的一研磨顆粒以及設置於該承載柱和該研磨顆粒之間的一磨料結合層。A hybrid chemical mechanical polishing dresser comprising: a base; a first grinding unit disposed on the base, and comprising a first bonding layer fixed on the base, disposed on the first combination a polishing unit substrate on the layer and an abrasive layer disposed on the polishing unit substrate, the polishing layer is a diamond coating formed by chemical vapor deposition, and the diamond coating surface has a plurality of polishing tips; and a plurality of polishing tips a second polishing unit is disposed on the base, and includes a second bonding layer fixed on the base, a supporting post disposed on the second bonding layer, and a mounting on the supporting post The abrasive particles and an abrasive bonding layer disposed between the support column and the abrasive particles. 如申請專利範圍第1項所述的混合式化學機械研磨修整器，其中該基座的表面具有一中心區域及一外環區域，該外環區域係環繞於該中心區域的外側。The hybrid chemical mechanical polishing conditioner of claim 1, wherein the surface of the base has a central region and an outer ring region, the outer ring region surrounding the outer side of the central region. 如申請專利範圍第2項所述的混合式化學機械研磨修整器，其中該中心區域具有供該第一研磨單元設置的一凹陷部，該外環區域具有相隔排列並容置該第二研磨單元的複數個第一容置部。The hybrid chemical mechanical polishing dresser of claim 2, wherein the central region has a recess for the first polishing unit, the outer ring region having a plurality of spaced apart and accommodating the second polishing unit a plurality of first accommodating parts. 如申請專利範圍第2項所述的混合式化學機械研磨修整器，其中該中心區域具有相隔排列並容置該第二研磨單元的複數個第二容置部，該外環區域具有供該第一研磨單元設置的一凹陷部。The hybrid chemical mechanical polishing conditioner according to claim 2, wherein the central region has a plurality of second accommodating portions arranged to be spaced apart and accommodating the second polishing unit, the outer ring region having the A recessed portion provided by the grinding unit. 如申請專利範圍第2項所述的混合式化學機械研磨修整器，其中該中心區域及該外環區域具有供該第一研磨單元設置的一凹陷部，該基座還包括複數個設置於該第一研磨單元並容置該第二研磨單元的複數個第三容置部。The hybrid chemical mechanical polishing dresser of claim 2, wherein the central region and the outer ring region have a recess for the first grinding unit, the base further comprising a plurality of The first grinding unit houses a plurality of third receiving portions of the second grinding unit. 如申請專利範圍第3項所述的混合式化學機械研磨修整器，其中該基座的表面更包括一內環區域，該內環區域係環繞於該中心區域的內側，且該內環區域具有相隔排列並容置該第二研磨單元的複數個第四容置部。The hybrid chemical mechanical polishing dresser of claim 3, wherein the surface of the base further comprises an inner ring region surrounding the inner side of the central region, and the inner ring region has Arranging and accommodating a plurality of fourth receiving portions of the second grinding unit. 如申請專利範圍第3至6項任一項所述的混合式化學機械研磨修整器，其中該些容置部係為一貫通孔結構或一內凹孔結構。The hybrid chemical mechanical polishing conditioner according to any one of claims 3 to 6, wherein the accommodating portions are a through hole structure or a concave hole structure. 如申請專利範圍第2項所述的混合式化學機械研磨修整器，其中該中心區域具有供該第一研磨單元設置的一凹陷部。The hybrid chemical mechanical polishing conditioner of claim 2, wherein the central region has a recess for the first polishing unit. 如申請專利範圍第1項所述的混合式化學機械研磨修整器，其中該基座係一平面基板。The hybrid chemical mechanical polishing conditioner of claim 1, wherein the base is a planar substrate. 如申請專利範圍第1項所述的混合式化學機械研磨修整器，其中該第二研磨單元具有一圖案化排列，該圖案化排列擇自於相同間距排列、不同間距排列、單圈環狀排列及多圈環狀排列所組成之群組。The hybrid chemical mechanical polishing conditioner according to claim 1, wherein the second polishing unit has a patterned arrangement, which is arranged from the same pitch, arranged at different pitches, and arranged in a single circle. And a group consisting of a plurality of annular arrangements. 如申請專利範圍第1項所述的混合式化學機械研磨修整器，其中該些第二研磨單元的數量介於2至300之間。The hybrid chemical mechanical polishing conditioner according to claim 1, wherein the number of the second polishing units is between 2 and 300. 如申請專利範圍第1項所述的混合式化學機械研磨修整器，其中該研磨顆粒擇自於人造鑽石、天然鑽石、多晶鑽石及立方氮化硼所組成之群組。The hybrid chemical mechanical polishing conditioner of claim 1, wherein the abrasive particles are selected from the group consisting of synthetic diamonds, natural diamonds, polycrystalline diamonds, and cubic boron nitride. 如申請專利範圍第1項所述的混合式化學機械研磨修整器，其中該第一結合層、該第二結合層及該磨料結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。The hybrid chemical mechanical polishing conditioner according to claim 1, wherein the first bonding layer, the second bonding layer and the abrasive bonding layer are selected from ceramic materials, brazing materials, plating materials, A group of metallic materials and polymeric materials. 如申請專利範圍第13項所述的混合式化學機械研磨修整器，其中該硬焊材料擇自於鐵、鈷、鎳、鉻、錳、矽、硼、碳及鋁所組成的群組。The hybrid chemical mechanical polishing conditioner of claim 13, wherein the brazing material is selected from the group consisting of iron, cobalt, nickel, chromium, manganese, cerium, boron, carbon, and aluminum. 如申請專利範圍第13項所述的混合式化學機械研磨修整器，其中該高分子材料擇自於環氧樹脂、聚脂樹脂、聚丙烯酸樹脂及酚醛樹脂所組成之群組。The hybrid chemical mechanical polishing conditioner according to claim 13, wherein the polymer material is selected from the group consisting of an epoxy resin, a polyester resin, a polyacryl resin, and a phenol resin. 如申請專利範圍第1項所述的混合式化學機械研磨修整器，其中該基座和該承載柱的材質擇自於不鏽鋼、金屬材料、塑膠材料及陶瓷材料所組成之群組。The hybrid chemical mechanical polishing conditioner according to claim 1, wherein the base and the material of the bearing column are selected from the group consisting of stainless steel, metal materials, plastic materials and ceramic materials. 如申請專利範圍第1項所述的混合式化學機械研磨修整器，其中該研磨單元基板的材料擇自於碳化矽、矽、多晶氧化鋁、單晶氧化鋁及鑽石所組成之群組。The hybrid chemical mechanical polishing conditioner according to claim 1, wherein the material of the polishing unit substrate is selected from the group consisting of niobium carbide, tantalum, polycrystalline alumina, single crystal alumina, and diamond. 如申請專利範圍第1項所述的混合式化學機械研磨修整器，其中該研磨顆粒的粒徑介於500μm至1200μm之間。The hybrid chemical mechanical polishing conditioner of claim 1, wherein the abrasive particles have a particle size of between 500 μm and 1200 μm.
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