TW201704525A - Substrate processing apparatus, method of manufacturing semiconductor device and heating unit - Google Patents

Substrate processing apparatus, method of manufacturing semiconductor device and heating unit Download PDF

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TW201704525A
TW201704525A TW105100685A TW105100685A TW201704525A TW 201704525 A TW201704525 A TW 201704525A TW 105100685 A TW105100685 A TW 105100685A TW 105100685 A TW105100685 A TW 105100685A TW 201704525 A TW201704525 A TW 201704525A
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heat generating
substrate
generating portion
processing chamber
heater
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TW105100685A
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Chinese (zh)
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TWI613316B (en
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Hitoshi Murata
Yuichi Wada
Takashi Yahata
Hidenari Yoshida
Shuhei Saido
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Hitachi Int Electric Inc
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Abstract

The present invention is to shorten a temperature settling time in a processing path. A substrate processing apparatus comprises: a substrate holding unit for holding a plurality of substrates; an insulating unit installed on the lower side of the substrate holding unit; a processing room for containing the substrate holding unit and processing the plurality of substrates; a first heating unit installed around the processing room and heating the inside of the processing room on a side; a second heating unit installed between the substrate holding unit and the heating unit within the processing room. The second heating unit includes a substantially ring-shaped exothermic unit, and a loading unit extended from the heating unit downwards. The exothermic unit is contained in a ring-shaped area having a smaller diameter than the substrate.

Description

基板處理裝置，半導體裝置的製造方法及加熱部 Substrate processing apparatus, manufacturing method of semiconductor device, and heating unit

本發明是有關基板處理裝置，半導體裝置的製造方法及加熱部。 The present invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a heating unit.

基板處理裝置，有一次處理預定片數的基板之分批式的基板處理裝置。分批式的基板處理裝置是將預定片數的基板保持於基板保持具，將基板保持具搬入處理室內，在加熱基板的狀態下對處理室內導入處理氣體，而進行所要的處理。 The substrate processing apparatus has a batch type substrate processing apparatus that processes a predetermined number of substrates at a time. In the batch type substrate processing apparatus, a predetermined number of substrates are held in a substrate holder, the substrate holder is carried into the processing chamber, and the processing gas is introduced into the processing chamber while the substrate is heated, and the desired processing is performed.

以往，處理室內的基板是藉由設成圍繞處理室的加熱器來從側方加熱。然而，特別是處理室內下方的基板的中心部難被加熱，又，溫度容易下降。因此，以往的基板處理裝置是在處理室內的昇溫費時，會有恢復時間(溫度安定時間)變長的問題。 Conventionally, the substrate in the processing chamber is heated from the side by a heater provided to surround the processing chamber. However, in particular, the center portion of the substrate below the processing chamber is hard to be heated, and the temperature is liable to lower. Therefore, in the conventional substrate processing apparatus, there is a problem that the recovery time (temperature stabilization time) becomes long when the temperature rise in the processing chamber is time-consuming.

[先行技術文獻] [Advanced technical literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特許第3598032號公報 [Patent Document 1] Japanese Patent No. 3598032

本發明是在於提供可使處理室內的溫度安定時間短縮的技術。 SUMMARY OF THE INVENTION The present invention is directed to a technique for shortening the temperature settling time in a processing chamber.

若根據本發明，則可提供一種技術，其係構成具備：基板保持具，其係保持複數片的基板；隔熱部，其係設於前述基板保持具的下方；處理室，其係收納前述基板保持具，處理前述基板；第1加熱部，其係設置於前述處理室的周圍，從側部加熱前述處理室內；及第2加熱部，其係於前述處理室內，設於前述基板保持具與前述隔熱部之間，又，前述第2加熱部具有：大略環狀的發熱部；及比前述發熱部還延伸至下方的垂下部，前述發熱部係構成收於比前述基板小徑的環狀領域。 According to the present invention, there is provided a technique comprising: a substrate holder that holds a plurality of substrates; a heat insulating portion that is disposed under the substrate holder; and a processing chamber that houses the aforementioned a substrate holder for processing the substrate; a first heating unit disposed around the processing chamber to heat the processing chamber from a side portion; and a second heating unit disposed in the processing chamber and disposed on the substrate holder Further, the second heating unit has a heat generating portion having a substantially annular shape and a lower portion extending downward from the heat generating portion, and the heat generating portion is configured to receive a smaller diameter than the substrate. Ring field.

若根據本發明，則發揮可使處理室內的溫度安定時間短縮的良好的效果。 According to the present invention, it is possible to exhibit a good effect of shortening the temperature stabilization time in the processing chamber.

2‧‧‧側部加熱器 2‧‧‧Side heater

6‧‧‧處理室 6‧‧‧Processing room

7‧‧‧晶舟 7‧‧‧The boat

31‧‧‧隔熱部 31‧‧‧Insulation Department

34‧‧‧蓋加熱器 34‧‧‧ Cover heater

38‧‧‧溫度控制部 38‧‧‧ Temperature Control Department

51、66‧‧‧發熱部 51, 66‧‧‧Fever Department

53‧‧‧垂下部 53‧‧‧垂下

61‧‧‧電阻發熱體 61‧‧‧Resistive heating element

圖1是被適用在本發明的第1實施例的基板處理裝置的處理爐的側剖面圖。 Fig. 1 is a side cross-sectional view showing a processing furnace to which a substrate processing apparatus according to a first embodiment of the present invention is applied.

圖2是表示本發明的基板處理裝置的控制系的概略構成圖。 2 is a schematic configuration diagram showing a control system of the substrate processing apparatus of the present invention.

圖3(A)是表示以同等的溫度來加熱底部領域全域時的溫度分布的模擬結果的圖，(B)是表示以同等的輸出來加熱底部領域全域時的溫度分布的模擬結果的圖。 Fig. 3(A) is a view showing a simulation result of a temperature distribution when the entire bottom region is heated at an equivalent temperature, and (B) is a graph showing a simulation result of a temperature distribution when the entire bottom region is heated by an equivalent output.

圖4是表示藉由本發明的第1實施例的蓋加熱器來加熱基板的半徑的大略中間部的底部領域時的溫度分布的模擬結果的圖。 4 is a view showing a simulation result of a temperature distribution when a bottom region of a substantially intermediate portion of a radius of a substrate is heated by a lid heater according to the first embodiment of the present invention.

圖5是表示使蓋加熱器的直徑不同時的最下段的基板的面內溫度分布的比較圖表，圓圈是表示設有蓋加熱器34的位置。 Fig. 5 is a graph showing a comparison of the in-plane temperature distribution of the lowermost substrate when the diameters of the lid heaters are different, and the circle indicates the position at which the lid heater 34 is provided.

圖6是表示使蓋加熱器的直徑不同時的最下段的基板的面內溫度的最大溫度差的比較圖表。 Fig. 6 is a graph showing a comparison of the maximum temperature difference of the in-plane temperature of the lowermost substrate when the diameters of the lid heaters are different.

圖7是表示蓋加熱器及其周邊部的上面圖。 Fig. 7 is a top view showing the lid heater and its peripheral portion.

圖8是表示基板處理裝置的底部領域的要部擴大側剖面圖。 8 is a cross-sectional view showing an enlarged side of a main part of a bottom field of the substrate processing apparatus.

圖9是表示基板處理裝置的底部領域的要部擴大側剖面圖。 FIG. 9 is a cross-sectional view showing an enlarged side of a main part of a bottom field of the substrate processing apparatus.

圖10是表示第1實施例的蓋加熱器的立體圖。 Fig. 10 is a perspective view showing the lid heater of the first embodiment.

圖11是表示第1實施例的蓋加熱器的上面圖。 Fig. 11 is a top view showing the lid heater of the first embodiment.

圖12是表示第1實施例的蓋加熱器的側面圖。 Fig. 12 is a side view showing the lid heater of the first embodiment.

圖13是表示第1實施例的蓋加熱器的正面圖。 Fig. 13 is a front elevational view showing the lid heater of the first embodiment;

圖14是表示本發明的第1實施例的變形例的蓋加熱器及其周邊部的上面圖。 Fig. 14 is a top view showing a lid heater and a peripheral portion thereof according to a modification of the first embodiment of the present invention.

圖15是表示本發明的第2實施例的蓋加熱器及其周邊部的上面圖。 Fig. 15 is a top view showing a lid heater and a peripheral portion thereof according to a second embodiment of the present invention.

圖16是表示本發明的第2實施例的變形例的蓋加熱器及其周邊部的上面圖。 Fig. 16 is a top view showing a lid heater and a peripheral portion thereof according to a modification of the second embodiment of the present invention.

圖17是表示本發明的第3實施例的蓋加熱器的上面圖。 Fig. 17 is a top plan view showing a lid heater according to a third embodiment of the present invention.

圖18是表示本發明的第3實施例的蓋加熱器的縱剖面圖。 Fig. 18 is a longitudinal sectional view showing a lid heater according to a third embodiment of the present invention.

圖19是表示被適用在本發明的第1實施例的基板處理裝置的構成的概略圖。 FIG. 19 is a schematic view showing a configuration of a substrate processing apparatus to which the first embodiment of the present invention is applied.

以下，一面參照圖面一面說明本發明的實施例。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

如圖1所示般，處理爐1是具有作為第1加熱部之圓筒形狀的側部加熱器2。在側部加熱器2的內側，例如由石英(SiO2)等的耐熱性材料所構成，上端閉塞、下端開口的圓筒形狀的反應管5會與側部加熱器2同心地配設。 As shown in Fig. 1, the processing furnace 1 is a side heater 2 having a cylindrical shape as a first heating portion. The inside of the side heater 2 is made of, for example, a heat-resistant material such as quartz (SiO 2 ), and the cylindrical reaction tube 5 whose upper end is closed and whose lower end is open is disposed concentrically with the side heater 2 .

反應管5是在內部劃成處理室6，在處理室6內收納基板保持具的晶舟7。晶舟7是構成以水平姿勢多段排列於垂直方向的狀態下保持作為基板的晶圓8。晶舟7是例如以石英或碳化矽等所構成。 The reaction tube 5 is internally divided into a processing chamber 6, and the wafer boat 7 of the substrate holder is housed in the processing chamber 6. The wafer boat 7 is a wafer 8 that is held as a substrate while being arranged in a vertical direction in a plurality of stages in a horizontal posture. The wafer boat 7 is made of, for example, quartz or tantalum carbide.

在本實施形態中，如圖19所示般，處理室6是由上起區分成領域1、領域2、領域3及領域4的4個領域。側部加熱器2是以對應於各領域的方式，分割成第1~第4加熱器。在領域1的周圍是設置第1加熱器2A，在領域2的周圍是設置第2加熱器2B，在領域3的周圍是設置第3加熱器2C，在領域4的上方的周圍是設置第4加熱器2D。處理室6內之中，晶舟7是跨越領域1~3而被收納，後述的隔熱部31是收納於領域4。因為第1加熱器~第3加熱器來加熱收納有晶舟7的領域(產品領域)，所以亦可總稱第1加熱器~第3加熱器作為加熱產品領域的上部加熱器。又，因為藉由第4加熱器2D來加熱收納有隔熱部31的領域(隔熱領域)的上方，所以亦可將第4加熱器2D稱為加熱隔熱領域的下部加熱器。 In the present embodiment, as shown in Fig. 19, the processing chamber 6 is divided into four fields of the field 1, the field 2, the field 3, and the field 4 from the top. The side heater 2 is divided into first to fourth heaters in a manner corresponding to each field. The first heater 2A is provided around the field 1, the second heater 2B is provided around the field 2, the third heater 2C is provided around the field 3, and the fourth heater 2C is provided around the field 4. Heater 2D. In the processing chamber 6, the wafer boat 7 is accommodated across the fields 1 to 3, and the heat insulating portion 31 to be described later is housed in the field 4. Since the first heater to the third heater heat the field (product area) in which the wafer boat 7 is housed, the first heater to the third heater can be collectively referred to as an upper heater in the field of heating products. In addition, since the fourth heater 2D heats the upper portion of the field (insulation area) in which the heat insulating portion 31 is housed, the fourth heater 2D can be referred to as a lower heater in the field of heat insulation.

如圖1所示般，在反應管5的下端部，貫通反應管5而設有氣體導入部9。氣體導入部9是連接沿著反應管5的內壁而立設之作為氣體導入管的噴嘴12。在噴嘴12的側面面對晶圓8的方向設有複數的氣體導入孔16，從氣體導入孔16導入處理氣體至處理室6。 As shown in Fig. 1, a gas introduction portion 9 is provided through the reaction tube 5 at the lower end portion of the reaction tube 5. The gas introduction portion 9 is a nozzle 12 that is connected as a gas introduction pipe that is erected along the inner wall of the reaction tube 5. A plurality of gas introduction holes 16 are provided in the direction in which the side surface of the nozzle 12 faces the wafer 8, and the processing gas is introduced into the processing chamber 6 from the gas introduction hole 16.

在氣體導入部9的上流側是經由作為氣體流量控制器的MFC(質量流控制器)14來連接未圖示的原 料氣體供給源、載流氣體供給源、反應氣體供給源、惰性氣體供給源。MFC14是電性連接氣體流量控制部15，構成可在所望的時機控制供給的氣體的流量成為所望的量。 On the upstream side of the gas introduction unit 9, an unillustrated original is connected via an MFC (mass flow controller) 14 as a gas flow controller. A material gas supply source, a carrier gas supply source, a reaction gas supply source, and an inert gas supply source. The MFC 14 is an electrically connected gas flow rate control unit 15 and is configured to control the flow rate of the gas supplied at a desired timing to a desired amount.

在反應管5的下端部之與氣體導入部9不同的位置設有將處理室6內的環境排氣的排氣部17，排氣部17是連接排氣管18。在排氣管18設有檢測出處理室6內的壓力之作為壓力檢測器(壓力檢測部)的壓力感測器19，且經由作為壓力調整器(壓力調整部)的APC(Auto Pressure Controller)閥21來連接作為真空排氣裝置的真空泵22。 An exhaust portion 17 that exhausts the environment in the processing chamber 6 is provided at a position different from the gas introduction portion 9 at a lower end portion of the reaction tube 5, and the exhaust portion 17 is connected to the exhaust pipe 18. The exhaust pipe 18 is provided with a pressure sensor 19 as a pressure detector (pressure detecting unit) that detects the pressure in the processing chamber 6, and passes through an APC (Auto Pressure Controller) as a pressure regulator (pressure adjusting unit). The valve 21 is connected to a vacuum pump 22 as a vacuum exhaust device.

APC閥21及壓力感測器19是電性連接壓力控制部23，該壓力控制部23是構成可在所望的時機控制APC閥21，使能根據藉由壓力感測器19所檢測出的壓力來利用APC閥21將處理室6的壓力成為所望的壓力。 The APC valve 21 and the pressure sensor 19 are electrically connected to the pressure control unit 23, and the pressure control unit 23 is configured to control the APC valve 21 at a desired timing to enable the pressure detected by the pressure sensor 19. The pressure of the processing chamber 6 is brought to a desired pressure by the APC valve 21.

在反應管5的下端部設有可將反應管5的下端開口氣密地閉塞之作為保持體的基底24、及作為爐口蓋體的密封蓋25。密封蓋25是例如由不鏽鋼等的金屬所形成。形成圓盤狀的基底24是例如由石英所形成，安裝成可疊合於密封蓋25上。在基底24的上面是設有與反應管5的下端抵接之作為密封構件的O型環26。在密封蓋25的下側是設置有使晶舟7旋轉的旋轉機構27。在旋轉機構27的旋轉軸28的上端是固定晶舟7的底板29。 At the lower end portion of the reaction tube 5, a base 24 as a holding body capable of hermetically closing the lower end opening of the reaction tube 5, and a sealing cover 25 as a mouthpiece cover are provided. The sealing cover 25 is formed of, for example, a metal such as stainless steel. The disk-shaped substrate 24 is formed, for example, of quartz, and is mounted to be laminated on the sealing cover 25. On the upper surface of the substrate 24, an O-ring 26 as a sealing member that is in contact with the lower end of the reaction tube 5 is provided. On the lower side of the seal cover 25, a rotation mechanism 27 for rotating the boat 7 is provided. At the upper end of the rotating shaft 28 of the rotating mechanism 27, the bottom plate 29 of the boat 7 is fixed.

在晶舟7的下方是設有隔熱部31。隔熱部31是構成底板32會藉由石英製的推壓板33來夾持，在底板 32被拘束於推壓板33間之下，可防止隔熱部31的傾倒。隔熱部31是例如由石英或碳化矽等的耐熱性材料所形成之圓筒狀。 Below the boat 7, a heat insulating portion 31 is provided. The heat insulating portion 31 is configured such that the bottom plate 32 is held by a pressing plate 33 made of quartz. 32 is restrained under the pressing plate 33 to prevent the pouring of the heat insulating portion 31. The heat insulating portion 31 is, for example, a cylindrical shape formed of a heat resistant material such as quartz or tantalum carbide.

在隔熱部31的內部是層疊有由石英或碳化矽等的耐熱性材料所構成的隔熱板(未圖示)。亦可將內部的隔熱板稱為隔熱部31。第4加熱器是構成加熱隔熱部31的上方。藉由如此的構成，將隔熱部31的上方加熱，可確保底部領域的溫度控制性。另一方面，隔熱部31的下方是未被直接性地加熱。因此，來自側部加熱器2及蓋加熱器34的熱會藉由隔熱部31來隔熱，可不易傳達至反應管5的下端側之爐口部。 Inside the heat insulating portion 31, a heat insulating plate (not shown) made of a heat resistant material such as quartz or tantalum carbide is laminated. The inner heat insulating plate may also be referred to as a heat insulating portion 31. The fourth heater is above the heating and heat insulating portion 31. With such a configuration, the upper portion of the heat insulating portion 31 is heated, and the temperature control property in the bottom region can be ensured. On the other hand, the lower portion of the heat insulating portion 31 is not directly heated. Therefore, the heat from the side heater 2 and the lid heater 34 is thermally insulated by the heat insulating portion 31, and can be easily transmitted to the furnace mouth portion on the lower end side of the reaction tube 5.

在隔熱部31的中心部，跨越上下方向全長，貫通形成有孔30。在孔30中插通旋轉軸28，旋轉軸28是貫通密封蓋25及基底24，連結至晶舟7。藉由旋轉軸28的旋轉，晶舟7對於隔熱部31可獨立旋轉。 In the center portion of the heat insulating portion 31, a hole 30 is formed to penetrate the entire length in the vertical direction. The rotating shaft 28 is inserted into the hole 30, and the rotating shaft 28 penetrates the sealing cover 25 and the base 24, and is coupled to the wafer boat 7. The wafer boat 7 can independently rotate with respect to the heat insulating portion 31 by the rotation of the rotary shaft 28.

密封蓋25是構成可藉由作為昇降機構的晶舟升降機35來昇降於垂直方向，該昇降機構是垂直設於反應管5的外部，藉此可將晶舟7搬出入於處理室6內外。 The sealing cover 25 is configured to be lifted and lowered in the vertical direction by a boat elevator 35 as a lifting mechanism. The lifting mechanism is vertically disposed outside the reaction tube 5, whereby the wafer boat 7 can be carried out into and out of the processing chamber 6.

在晶舟7與隔熱部31之間的空間是設有作為具有後述的發熱部51的第2加熱部之蓋加熱器34。至少以發熱部51能夠位於第3加熱器與第4加熱器的境界的高度位置以上的高度之方式設置蓋加熱器34。換言之，至少以發熱部51能夠位於產品領域與隔熱領域的境界的高度位置以上的高度之方式設置蓋加熱器34。藉由在如 此的位置設置蓋加熱器34，可有效率地加熱產品領域的下部(晶舟7的底部晶圓所被載置的底部領域)。 A space between the wafer boat 7 and the heat insulating portion 31 is provided with a lid heater 34 as a second heating portion having a heat generating portion 51 to be described later. The cover heater 34 is provided at least at a height above the height position of the boundary between the third heater and the fourth heater. In other words, the cover heater 34 is provided at least in such a manner that the heat generating portion 51 can be positioned at a height above the height of the product area and the boundary of the heat insulating field. By This position is provided with a cover heater 34 which can efficiently heat the lower portion of the product area (the bottom field on which the bottom wafer of the wafer boat 7 is placed).

蓋加熱器34是形成在作為保護管的石英管內例如氣密地封入電阻發熱體的構造。蓋加熱器34的發熱部51是平面視形成大略環狀。藉由如此的構成，在底部領域，例如可環狀地加熱最下段的晶圓8的徑方向。亦即，可重點地加熱最下段的晶圓8的徑方向的一部分。換言之，可不加熱最下段的晶圓8的中心領域，而加熱比中心領域更外方的領域。另外，蓋加熱器34是只要具有可耐得住將處理室6減壓時的壓力之強度即可，因此可使保護管的厚度形成薄，可使縱方向的厚度形成薄。 The lid heater 34 has a structure in which a resistance heating element is hermetically sealed, for example, in a quartz tube as a protective tube. The heat generating portion 51 of the cover heater 34 is formed in a substantially annular shape in plan view. With such a configuration, in the bottom region, for example, the radial direction of the lowermost wafer 8 can be heated in a ring shape. That is, a part of the radial direction of the lowermost wafer 8 can be focused on. In other words, the center area of the lowermost wafer 8 may not be heated, and the field outside the center area may be heated. Further, the cover heater 34 is only required to have a strength capable of withstanding the pressure at which the treatment chamber 6 is decompressed. Therefore, the thickness of the protective tube can be made thin, and the thickness in the longitudinal direction can be made thin.

在側部加熱器2與反應管5之間是設置有作為第1溫度檢測器的第1溫度感測器37。又，以能夠接觸於蓋加熱器34的保護管表面之方式，設置有作為第2溫度檢測器的第2溫度感測器39。在此是設置成接觸於保護管的上面(參照圖7)。第2溫度感測器39是成為熱電偶等的溫度檢測器收納於保護管的構造。 A first temperature sensor 37 as a first temperature detector is provided between the side heater 2 and the reaction tube 5. Further, a second temperature sensor 39 as a second temperature detector is provided so as to be in contact with the surface of the protective tube of the lid heater 34. Here, it is disposed in contact with the upper surface of the protective tube (refer to FIG. 7). The second temperature sensor 39 is a structure in which a temperature detector such as a thermocouple is housed in a protective tube.

溫度控制部38是構成根據藉由第1溫度感測器37所檢測出的溫度資訊來調整往側部加熱器2的通電情況，根據藉由第2溫度感測器39所檢測出的溫度資訊來調整往蓋加熱器34的通電情況，以處理室6內的溫度能夠成為所望的溫度分布之方式，在所望的時機控制側部加熱器2及蓋加熱器34。氣體流量控制部15、壓力控制部23、驅動控制部36、溫度控制部38是被電性連接至作 為控制基板處理裝置全體的主控制部之控制器42。 The temperature control unit 38 is configured to adjust the energization to the side heater 2 based on the temperature information detected by the first temperature sensor 37, and based on the temperature information detected by the second temperature sensor 39. The energization to the lid heater 34 is adjusted so that the temperature in the processing chamber 6 can be a desired temperature distribution, and the side heater 2 and the lid heater 34 are controlled at a desired timing. The gas flow rate control unit 15, the pressure control unit 23, the drive control unit 36, and the temperature control unit 38 are electrically connected to each other. It is a controller 42 that controls the main control unit of the entire substrate processing apparatus.

如圖2所示般，控制部(控制手段)的控制器42是構成為具備CPU(Central Processing Unit)43、RAM(Random Access Memory)44、記憶裝置45、I/O埠46之電腦。RAM44、記憶裝置45、I/O埠46是構成可經由內部匯流排47來與CPU43進行資料交換。控制器42是連接例如以觸控面板等所構成的輸出入裝置48。 As shown in FIG. 2, the controller 42 of the control unit (control means) is a computer including a CPU (Central Processing Unit) 43, a RAM (Random Access Memory) 44, a memory device 45, and an I/O port 46. The RAM 44, the memory device 45, and the I/O port 46 are configured to exchange data with the CPU 43 via the internal bus bar 47. The controller 42 is an input/output device 48 that is connected to, for example, a touch panel or the like.

記憶裝置45是例如以快閃記憶體，HDD(Hard Disk Drive)等所構成。在記憶裝置45內，控制基板處理裝置的動作的控制程式或記載有後述的基板處理的程序或條件等的製程處方可讀出地被格納。製程處方是使後述的基板處理的各程序實行於控制器42，組合成可取得預定的結果，作為程式的機能。 The memory device 45 is constituted by, for example, a flash memory, an HDD (Hard Disk Drive) or the like. In the memory device 45, a control program for controlling the operation of the substrate processing device or a process recipe for describing a program or condition of substrate processing to be described later is readable. The process recipe is a function of a program in which each program of the substrate processing described later is executed in the controller 42 and combined to obtain a predetermined result.

以下，亦將此製程處方或控制程式等總稱為程式。在本說明書中使用程式的語言時，有只含製程處方單體時，只含控制程式單體時，或含其雙方時。並且，RAM44是構成為暫時性保持藉由CPU43所讀出的程式或資料等之記憶領域(工作區域)。 Hereinafter, this process recipe or control program is also collectively referred to as a program. When the language of the program is used in this manual, when only the process prescription monomer is included, only the control program unit is included, or both of them are included. Further, the RAM 44 is a memory area (work area) configured to temporarily hold programs, materials, and the like read by the CPU 43.

I/O埠46是被連接至上述氣體流量控制部15、壓力控制部23、驅動控制部36、溫度控制部38。CPU43是構成從記憶裝置45讀出控制程式而實行，且按照來自輸出入裝置48的操作指令的輸入等，從記憶裝置45讀出處方。CPU43是構成控制氣體流量控制部15之各種氣體的流量調整動作、壓力控制部23之壓力調整動 作、排氣裝置22的起動及停止、溫度控制部38之側部加熱器2及蓋加熱器34的溫度調整動作、驅動控制部36之晶舟7的旋轉，以及旋轉速度調節動作及昇降動作等，使能按照讀出的處方之內容。 The I/O unit 46 is connected to the gas flow rate control unit 15, the pressure control unit 23, the drive control unit 36, and the temperature control unit 38. The CPU 43 is configured to read the control program from the memory device 45, and reads the prescription from the memory device 45 in accordance with an input of an operation command from the input/output device 48. The CPU 43 is a flow rate adjustment operation of various gases constituting the control gas flow rate control unit 15, and a pressure adjustment operation of the pressure control unit 23. Start and stop of the exhaust device 22, temperature adjustment operation of the side heater 2 and the cover heater 34 of the temperature control unit 38, rotation of the boat 7 of the drive control unit 36, and rotation speed adjustment operation and lifting operation Etc., enable the content according to the read prescription.

控制器42是可將儲存於外部記憶裝置(例如，磁帶，軟碟或硬碟等的磁碟，CD或DVD等的光碟，MO等的光磁碟，USB記憶體或記憶卡等的半導體記憶體)49的上述程式安裝於電腦來構成。記憶裝置45或外部記憶裝置49是可構成為電腦可讀取的記錄媒體。以下，亦將該等總稱簡稱為記錄媒體。在本說明書中稱記錄媒體時，有只包含記憶裝置45單體時，只包含外部記憶裝置49單體時，或包含其雙方時。另外，對電腦之程式的提供是亦可不使用外部記憶裝置49，而利用網際網際或專線等的通訊手段。 The controller 42 is a semiconductor memory that can be stored in an external memory device (for example, a magnetic disk such as a magnetic tape, a floppy disk or a hard disk, a compact disk such as a CD or a DVD, an optical disk such as an MO, a USB memory or a memory card. The above program of the body 49 is installed on a computer. The memory device 45 or the external memory device 49 is a recording medium configurable as a computer. Hereinafter, these general terms are also simply referred to as recording media. When the recording medium is referred to in the present specification, when only the memory device 45 is included, only when the external memory device 49 is alone or when both of them are included. In addition, the program of the computer can be provided by means of communication means such as internet or private line without using the external memory device 49.

其次，說明有關利用上述構成的處理爐1來對晶圓8進行氧化、擴散或成膜等的基板處理(以下亦稱為成膜處理)的方法，作為半導體裝置的製造工程之一工程。在此是說明有關藉由對於晶圓8交替供給第1處理氣體(原料氣體)及第2處理氣體(反應氣體)來形成膜於晶圓8上的例子。另外，在以下的說明中，構成基板處理裝置的各部的動作是藉由控制器42來控制。 Next, a method of performing substrate processing (hereinafter also referred to as film formation processing) such as oxidation, diffusion, or film formation on the wafer 8 by the processing furnace 1 having the above-described configuration will be described as one of the manufacturing processes of the semiconductor device. Here, an example in which the first processing gas (feed material gas) and the second processing gas (reaction gas) are alternately supplied to the wafer 8 to form a film on the wafer 8 will be described. In addition, in the following description, the operation of each unit constituting the substrate processing apparatus is controlled by the controller 42.

一旦預定片數的晶圓8被裝填於晶舟7(晶圓裝載)，則晶舟7藉由晶舟升降機35來裝入處理室6內(晶舟裝載)。在此狀態下，密封蓋25是成為經由基底 24、O型環26來氣密地閉塞反應管5的下端開口(爐口部)的狀態。此時，亦可使蓋加熱器34加熱維持於預定的溫度(第1溫度)。此情況，第1溫度是設定成比側部加熱器2的溫度(至少第4加熱器的溫度)更低的溫度。 Once the predetermined number of wafers 8 are loaded on the wafer boat 7 (wafer loading), the wafer boat 7 is loaded into the processing chamber 6 by the boat elevator 35 (boat loading). In this state, the sealing cover 25 is made to pass through the base. 24. The O-ring 26 hermetically closes the state of the lower end opening (furnace portion) of the reaction tube 5. At this time, the lid heater 34 may be heated and maintained at a predetermined temperature (first temperature). In this case, the first temperature is set to be lower than the temperature of the side heater 2 (at least the temperature of the fourth heater).

以處理室6內能夠成為所望的壓力之方式，藉由排氣裝置22來真空排氣(減壓排氣)。此時，處理室6的壓力是以壓力感測器19來測定，根據此測定的壓力來回饋控制APC閥21。 The exhaust gas is evacuated (depressurized) by the exhaust unit 22 so that the pressure in the processing chamber 6 can be expected. At this time, the pressure of the processing chamber 6 is measured by the pressure sensor 19, and the APC valve 21 is controlled by feedback according to the measured pressure.

又，以處理室6內的晶圓8能夠成為所望的溫度之方式，藉由側部加熱器2及蓋加熱器34來加熱。此時，以處理室6內能夠成為所望的溫度分布之方式，根據第1溫度感測器37所檢測出的溫度資訊來對側部加熱器2回饋控制通電情況，根據第2溫度感測器39所檢測出的溫度資訊來對蓋加熱器34回饋控制通電情況。此時，將蓋加熱器34的設定溫度設為側部加熱器2的溫度(至少第4加熱器的溫度)以下的溫度。在此，當處理室6內的底部領域的晶圓8成為所望的溫度時，亦可使蓋加熱器34的加熱停止。 Further, the wafer 8 in the processing chamber 6 can be heated by the side heater 2 and the lid heater 34 so that the wafer 8 can be at a desired temperature. At this time, the side heater 2 is fed back to control the energization based on the temperature information detected by the first temperature sensor 37 so that the temperature distribution in the processing chamber 6 can be expected, according to the second temperature sensor. 39 detected temperature information to feedback the lid heater 34 to control the energization condition. At this time, the set temperature of the lid heater 34 is set to a temperature equal to or lower than the temperature of the side heater 2 (at least the temperature of the fourth heater). Here, when the wafer 8 in the bottom region in the processing chamber 6 has a desired temperature, the heating of the lid heater 34 can be stopped.

接著，藉由旋轉機構27經由底板29來旋轉晶舟7，藉此處理中晶圓8會旋轉。此時，由於旋轉軸28插通於孔30，因此對於隔熱部31而言僅晶舟7會旋轉。藉由晶舟7旋轉，即使是大略環狀的蓋加熱器34，也可均一地加熱底部領域的環狀領域。 Next, the wafer boat 7 is rotated by the rotation mechanism 27 via the bottom plate 29, whereby the wafer 8 is rotated during the process. At this time, since the rotating shaft 28 is inserted into the hole 30, only the boat 7 rotates with respect to the heat insulating portion 31. By the rotation of the boat 7, even in the case of the roughly annular cover heater 34, the annular field in the bottom field can be uniformly heated.

(原料氣體供給工程) (raw material gas supply project)

其次，從原料氣體供給源供給原料氣體至處理室6內。原料氣體是以MFC14來控制成所望的流量，從氣體導入部9流通噴嘴12，從氣體導入孔16導入至處理室6內。 Next, the material gas is supplied from the material gas supply source to the processing chamber 6. The material gas is controlled to a desired flow rate by the MFC 14, and flows through the nozzle 12 from the gas introduction portion 9, and is introduced into the processing chamber 6 from the gas introduction hole 16.

(原料氣體排氣工程) (raw material gas exhaust engineering)

一旦預先被設定的原料氣體供給時間經過，則停止原料氣體往處理室6內供給，藉由排氣裝置22來將處理室6內真空排氣。此時，亦可從惰性氣體供給源供給惰性氣體至處理室6內(惰性氣體淨化)。 When the supply time of the raw material gas set in advance is passed, the supply of the raw material gas into the processing chamber 6 is stopped, and the inside of the processing chamber 6 is evacuated by the exhaust device 22. At this time, the inert gas may be supplied from the inert gas supply source to the processing chamber 6 (inert gas purification).

(反應氣體供給工程) (reaction gas supply project)

一旦預先被設定的排氣時間經過，則其次從反應氣體供給源供給反應氣體。以MFC14來控制成所望的流量之氣體是從氣體導入部9流通噴嘴12，從氣體導入孔16導入至處理室6內。 Once the exhaust time set in advance is passed, the reaction gas is supplied from the reaction gas supply source. The gas that is controlled to flow at a desired flow rate by the MFC 14 flows through the nozzle 12 from the gas introduction portion 9, and is introduced into the processing chamber 6 from the gas introduction hole 16.

(反應氣體排氣工程) (reaction gas exhaust engineering)

一旦更經過預先被設定的處理時間，則停止反應氣體往處理室6內供給，藉由排氣裝置22來將處理室6內真空排氣。此時，亦可從惰性氣體供給源供給惰性氣體至處理室6內(惰性氣體淨化)。 When the processing time set in advance is further passed, the supply of the reaction gas into the processing chamber 6 is stopped, and the inside of the processing chamber 6 is evacuated by the exhaust unit 22. At this time, the inert gas may be supplied from the inert gas supply source to the processing chamber 6 (inert gas purification).

藉由使上述4個的工程非同時亦即不同步進 行的循環進行預定次數(n次)，可在晶圓8上形成預定組成及預定膜厚的膜。另外，上述的循環是重複複數次為理想。 By making the above four projects non-simultaneous, that is, different steps The cycle of the row is performed a predetermined number of times (n times), and a film having a predetermined composition and a predetermined film thickness can be formed on the wafer 8. In addition, it is desirable that the above cycle is repeated plural times.

形成預定膜厚的膜之後，從惰性氣體供給源供給惰性氣體，處理室6內會被置換成惰性氣體，且處理室6的壓力會被恢復成常壓。然後，藉由晶舟升降機35降下密封蓋25，爐口部會被開口，且處理完成晶圓8被保持於晶舟7的狀態下從反應管5搬出(晶舟卸載)。然後，處理完成晶圓8由晶舟7取出(晶圓卸載)。此時，使蓋加熱器34的加熱停止。 After the film having a predetermined film thickness is formed, the inert gas is supplied from the inert gas supply source, the inside of the processing chamber 6 is replaced with an inert gas, and the pressure of the processing chamber 6 is restored to normal pressure. Then, the sealing cover 25 is lowered by the boat elevator 35, the mouth portion is opened, and the processed wafer 8 is carried out from the reaction tube 5 while being held in the boat 7 (the boat is unloaded). Then, the process completion wafer 8 is taken out by the wafer boat 7 (wafer unloading). At this time, the heating of the lid heater 34 is stopped.

另外，舉一例，作為在本實施例的處理爐1於晶圓8形成氧化膜時的處理條件，原料氣體為使用DCS(SiH2Cl2：二氯甲矽烷)氣體，反應氣體為使用O2(氧)氣體，惰性氣體為使用N2(氮)氣體時，例如下記般。 Further, as an example of the processing conditions in the case where the oxide film is formed on the wafer 8 in the processing furnace 1 of the present embodiment, the source gas is DCS (SiH 2 Cl 2 : dichloromethane) gas, and the reaction gas is O 2 . The (oxygen) gas, when the inert gas is a N 2 (nitrogen) gas, is as follows.

處理溫度(晶圓溫度)：300℃~700℃、處理壓力(處理室內壓力)1Pa~4000Pa、DCS氣體：100sccm~10000sccm、O2氣體：100sccm~10000sccm、N2氣體：100sccm~10000sccm、藉由將各自的處理條件設定於各自的範圍內的某值，可使成膜處理適當地進行。 Processing temperature (wafer temperature): 300 ° C ~ 700 ° C, processing pressure (treatment chamber pressure) 1 Pa ~ 4000 Pa, DCS gas: 100 sccm ~ 10000 sccm, O 2 gas: 100 sccm ~ 10000 sccm, N 2 gas: 100 sccm ~ 10000 sccm, by By setting the respective processing conditions to a certain value within the respective ranges, the film formation process can be appropriately performed.

其次，說明有關例如將晶圓8的直徑設為300mm時之蓋加熱器34的徑方向的加熱位置與處理室6 下部(底部領域)的溫度分布的關係。 Next, a description will be given of, for example, a heating position in the radial direction of the lid heater 34 when the diameter of the wafer 8 is 300 mm, and the processing chamber 6 The relationship of the temperature distribution of the lower part (bottom area).

圖3(A)、(B)是表示將底部領域的全域加熱時(以往例)的溫度分布的模擬結果。以同心多重狀地設置複數例如3個的蓋加熱器34之構成進行模擬，作為加熱底部領域的全域的情況。 3(A) and 3(B) are simulation results showing the temperature distribution when the whole field of the bottom field is heated (conventional example). The simulation is performed by arranging a plurality of, for example, three cover heaters 34 in a concentric manner, as a case of heating the entire field of the bottom field.

又，圖4是表示環狀地加熱底部領域的一部分時(本發明)的溫度分布的模擬結果。另外，在圖4中是顯示將加熱位置設為離處理室6的中心70mm的位置，亦即將蓋加熱器34的直徑設為140mm時的溫度分布，作為其一例。 Moreover, FIG. 4 is a simulation result showing the temperature distribution (the present invention) when a part of the bottom field is heated in a ring shape. In addition, FIG. 4 shows an example in which the heating position is set to a position 70 mm away from the center of the processing chamber 6, that is, a temperature distribution when the diameter of the lid heater 34 is 140 mm.

如圖3(A)、(B)所示般，在底部領域，將蓋加熱器34a~34c的溫度設為同等(615℃)時，或將蓋加熱器34a~34c的輸出設為同等(12W)時，皆產生底部領域的外周側的溫度高，中心側的溫度低的溫度分布，晶圓8的面內溫度差最大約形成4℃。亦即，將底部領域全域加熱那樣的構成的加熱器時，由於在晶圓8的面內產生大的溫度差，因此會有成膜的面內均一性惡化的情形。 As shown in FIGS. 3(A) and (B), in the bottom field, when the temperatures of the lid heaters 34a to 34c are equal (615 ° C), or the outputs of the lid heaters 34a to 34c are equal ( At 12 W), the temperature at the outer peripheral side of the bottom region was high, and the temperature at the center side was low, and the in-plane temperature difference of the wafer 8 was at most about 4 °C. In other words, when a heater having a structure in which the entire bottom region is heated is used, a large temperature difference occurs in the surface of the wafer 8, and thus the in-plane uniformity of film formation may be deteriorated.

對於此，發明者們經深入研究的結果得知，藉由蓋加熱器34，不是底部領域的全域，而是如圖4所示般，以底部領域的徑方向的一部分的環狀領域為中心加熱時，在底部領域的外周側及中心側幾乎無溫度差，底部領域的溫度分布也可形成緩和。 As a result of intensive research, the inventors have found that the cover heater 34 is not the entire field of the bottom field, but is a part of the annular field in the radial direction of the bottom field, as shown in FIG. When heated, there is almost no temperature difference on the outer peripheral side and the center side of the bottom field, and the temperature distribution in the bottom region can also be moderated.

如圖5、圖6所示般，將蓋加熱器34之徑方向的加熱位置(蓋加熱器34的半徑)設為離處理室6的 中心90mm、110mm時，亦即加熱底部領域之比晶圓8a的半徑的中間部(75mm)更外周側時，相較於加熱底部領域全域時，晶圓8a的面內溫度差變小，有改善。然而，產生最下段的晶圓8a的外周側的溫度高，中心側的溫度低的溫度分布(參照圖5)。並且，晶圓8a的面內之最大溫度差依然大，面內溫度成為不均一(參照圖6)。這可思考是因為晶圓8a的中心側無熱源，所以晶圓8a的中心側難被加熱，且因為晶圓8a的外周側被側部加熱器2及蓋加熱器34所2重加熱。 As shown in FIGS. 5 and 6, the heating position in the radial direction of the lid heater 34 (the radius of the lid heater 34) is set to be away from the processing chamber 6. When the center is 90 mm or 110 mm, that is, when the bottom portion of the bottom portion is heated to the outer peripheral side of the intermediate portion (75 mm) of the radius of the wafer 8a, the in-plane temperature difference of the wafer 8a becomes smaller than when the entire bottom region is heated. improve. However, the temperature at the outer peripheral side of the lowermost wafer 8a is high, and the temperature at the center side is low (see FIG. 5). Further, the maximum temperature difference in the plane of the wafer 8a is still large, and the in-plane temperature is not uniform (see FIG. 6). This is considered because the center side of the wafer 8a has no heat source, so that the center side of the wafer 8a is hardly heated, and the outer peripheral side of the wafer 8a is reheated by the side heater 2 and the lid heater 34.

又，將蓋加熱器34之徑方向的加熱位置設為離處理室6的中心30mm、50mm時，亦即加熱底部領域之比晶圓8a的半徑的中間部更中心側時，相較於加熱底部領域全域時，可見晶圓8a的面內溫度分布的改善，但最下段的晶圓8a面內產生外周側及中心側的溫度變高之逆凸狀的溫度分布。此情況也是晶圓8a的面內之最大溫度差依然大，面內溫度成為不均一。這可思考是因為蓋加熱器34過於靠中心側，對晶圓8a的半徑方向的中間部附近的加熱不足所致。 Further, when the heating position in the radial direction of the lid heater 34 is 30 mm or 50 mm from the center of the processing chamber 6, that is, when the heating bottom region is more centered than the intermediate portion of the radius of the wafer 8a, it is compared with heating. When the bottom region is the whole region, the in-plane temperature distribution of the wafer 8a is improved. However, in the lowermost wafer 8a, the temperature distribution on the outer peripheral side and the center side is increased in a reverse convex temperature. In this case, the maximum temperature difference in the plane of the wafer 8a is still large, and the in-plane temperature becomes uneven. This is considered to be because the cover heater 34 is too close to the center side and is insufficiently heated in the vicinity of the intermediate portion in the radial direction of the wafer 8a.

另一方面，將蓋加熱器34的加熱位置設為離處理室6的中心60mm以上77.5mm以下時，亦即加熱最下段的晶圓8a的半徑方向的大略中間部附近時，在最下段的晶圓8a的外周側及中心側幾乎不產生溫度差，成為緩和的溫度分布。 On the other hand, when the heating position of the lid heater 34 is 60 mm or more and 77.5 mm or less from the center of the processing chamber 6, that is, when the vicinity of the middle portion of the wafer 8a in the lowermost stage is heated in the radial direction, the lowermost portion is The temperature difference is hardly generated on the outer peripheral side and the center side of the wafer 8a, and the temperature distribution is moderated.

而且，晶圓8a的面內之溫度差也成為0.6℃ 程度，面內溫度均一性會提升。另外，晶圓8a面內之最大溫度差最小，面內溫度均一性提升是例如將蓋加熱器34之徑方向的加熱位置設為離處理室6的中心(晶圓8a的中心)77.5mm時，亦即將蓋加熱器34的直徑設為155mm，加熱底部領域時。 Moreover, the temperature difference in the plane of the wafer 8a also becomes 0.6 °C. The degree of in-plane temperature uniformity will increase. Further, the maximum temperature difference in the plane of the wafer 8a is the smallest, and the in-plane temperature uniformity is raised, for example, when the heating position in the radial direction of the lid heater 34 is 77.5 mm from the center of the processing chamber 6 (the center of the wafer 8a). That is, the diameter of the cover heater 34 is set to 155 mm, when the bottom field is heated.

另外，相較於加熱底部領域的全域時，蓋加熱器34的直徑為收於60mm以上180mm以下的範圍的環狀領域內時，可見面內溫度分布的改善。亦即，以底部領域的晶圓8a的中心為中心點，以底部領域的直徑60mm以上180mm以下的環狀領域內為中心加熱，可使面內溫度分布改善。將蓋加熱器34的直徑收於比60mm小的圓形領域的範圍內時，或比180mm大時，面內的溫度差約成為2.5℃，面內溫度分布會惡化，有損成膜的面內均一性。 Further, when the diameter of the lid heater 34 is in the annular region of the range of 60 mm or more and 180 mm or less, the in-plane temperature distribution is improved as compared with the case where the entire bottom region is heated. In other words, the in-plane temperature distribution can be improved by centering on the center of the wafer 8a in the bottom field and centering on the annular region having a diameter of 60 mm or more and 180 mm or less in the bottom region. When the diameter of the lid heater 34 is within a range of a circular region smaller than 60 mm, or when it is larger than 180 mm, the temperature difference in the plane is about 2.5 ° C, and the in-plane temperature distribution is deteriorated, and the surface of the film is damaged. Internal homogeneity.

而且，藉由將蓋加熱器34的直徑設為90mm以上160mm以下，可使晶圓8a面內的溫度差小於2℃，可見更進一步的溫度分布的改善。亦即，藉由加熱底部領域的直徑90mm以上160mm以下的環狀領域內，可更進一步的溫度分布的改善。又，為了使基板處理的面內均一性更為提升，最好晶圓8a的面內之溫度差為0.6℃以內，最好將蓋加熱器34的直徑設為120mm以上155mm以下。亦即，以能夠積極地加熱底部領域的直徑120mm以上155mm以下的環狀領域內之方式，將蓋加熱器34的直徑收於120mm以上155mm以下的環狀領域為理想。 Further, by setting the diameter of the lid heater 34 to 90 mm or more and 160 mm or less, the temperature difference in the plane of the wafer 8a can be made smaller than 2 ° C, and further improvement in temperature distribution can be seen. That is, by heating the annular region of the bottom region having a diameter of 90 mm or more and 160 mm or less, an improvement in temperature distribution can be further achieved. Further, in order to improve the in-plane uniformity of the substrate processing, it is preferable that the temperature difference in the in-plane of the wafer 8a is 0.6 ° C or less, and it is preferable to set the diameter of the lid heater 34 to 120 mm or more and 155 mm or less. In other words, it is preferable to reduce the diameter of the lid heater 34 to an annular region of 120 mm or more and 155 mm or less so that the diameter of the bottom region can be actively heated in an annular region of 120 mm or more and 155 mm or less.

在上述中，例如將晶圓的直徑設為300mm進行說明，但晶圓的直徑並非限於300mm，例如150mm、200mm及450mm也可取得同樣的效果。亦即，相對於晶圓的直徑，若積極地加熱底部領域的1/5以上3/5以下的範圍，則可見面內溫度分布的改善。亦即，若蓋加熱器34的直徑收於晶圓的直徑的1/5以上3/5以下的環狀領域內，則可見面內溫度分布的改善。更理想是若積極地加熱底部領域的3/10以上8/15以下的範圍，則可使面內溫度分布更為改善。亦即，若蓋加熱器34的直徑收於晶圓的直徑的3/10以上8/15以下的環狀領域內，則可使面內溫度分布更為改善。更加理想是若積極地加熱底部領域的2/5以上31/60以下的範圍，則可使面內溫度分布更為改善，可使基板處理的均一性提升。亦即，若將蓋加熱器34的直徑收於2/5以上31/60以下的環狀領域內，則可使面內溫度分布更為改善，可使基板處理的面內均一性提升。 In the above description, for example, the diameter of the wafer is set to 300 mm. However, the diameter of the wafer is not limited to 300 mm, and the same effect can be obtained by, for example, 150 mm, 200 mm, and 450 mm. That is, when the range of 1/5 or more and 3/5 or less of the bottom field is actively heated with respect to the diameter of the wafer, the in-plane temperature distribution is improved. That is, if the diameter of the lid heater 34 is within the annular region of 1/5 or more and 3/5 or less of the diameter of the wafer, the in-plane temperature distribution can be improved. More preferably, if the range of 3/10 or more and 8/15 or less of the bottom field is actively heated, the in-plane temperature distribution can be further improved. That is, if the diameter of the lid heater 34 is within the annular region of 3/10 or more and 8/15 or less of the diameter of the wafer, the in-plane temperature distribution can be further improved. More preferably, if the range of 2/5 or more and 31/60 or less of the bottom field is actively heated, the in-plane temperature distribution can be further improved, and the uniformity of the substrate treatment can be improved. In other words, when the diameter of the lid heater 34 is set in an annular region of 2/5 or more and 31/60 or less, the in-plane temperature distribution can be further improved, and the in-plane uniformity of the substrate treatment can be improved.

如上述般，在使蓋加熱器34之徑方向的加熱位置從底部領域的外周側往中心側移動的過程，亦即最下段的晶圓8a的面內溫度在外周側高在中心側低的溫度分布與最下段的晶圓8a的面內溫度在外周側及中心側高在其間低的逆凸狀的溫度分布之間，成為最下段的晶圓8a的面內溫度在外周側及中心側幾乎無溫度差的溫度分布。 As described above, the process of moving the heating position in the radial direction of the lid heater 34 from the outer peripheral side to the center side of the bottom region, that is, the in-plane temperature of the lowermost wafer 8a is lower on the outer peripheral side and lower on the center side. The temperature distribution is between the in-plane temperature of the lowermost wafer 8a and the lower circumferential temperature distribution between the outer peripheral side and the center side, and the in-plane temperature of the lowermost wafer 8a is on the outer peripheral side and the center side. There is almost no temperature difference in temperature distribution.

依裝置等，雖有存在差異的可能性，但在使徑方向的加熱位置從外周側往中心側變化時，存在最下段 的晶圓8a的面內溫度分布成為均一的位置。因此，藉由實驗等來求取最下段的晶圓8a的面內溫度分布成為均一的加熱位置，以能夠加熱所求得的加熱位置之方式，求取蓋加熱器34的直徑，可使基板處理的均一性提升。 There is a possibility of a difference depending on the device, etc., but when the heating position in the radial direction is changed from the outer peripheral side to the central side, there is a lowermost section. The in-plane temperature distribution of the wafer 8a becomes a uniform position. Therefore, the in-plane temperature distribution of the lowermost wafer 8a is determined by experiments or the like to be a uniform heating position, and the diameter of the lid heater 34 can be obtained by heating the obtained heating position. The uniformity of processing is improved.

其次，在圖7~圖13中說明有關第1實施例的蓋加熱器34的一例。如圖7所示般，蓋加熱器34的上端是具有大略環狀的發熱部51及從發熱部51的兩端往外周方向突出的V字形的補強部52。在此，發熱部51是其一部分為開放的環形狀，換言之，形成圓弧狀(馬蹄形狀)。又，蓋加熱器34如圖8所示般，具有在補強部52的根部(外周側端部)被彎曲，朝下方垂直延伸的垂下部53。 Next, an example of the lid heater 34 of the first embodiment will be described with reference to Figs. 7 to 13 . As shown in FIG. 7, the upper end of the lid heater 34 is a heat generating portion 51 having a substantially annular shape, and a V-shaped reinforcing portion 52 projecting from both ends of the heat generating portion 51 in the outer circumferential direction. Here, the heat generating portion 51 has a ring shape in which a part thereof is open, in other words, an arc shape (horse shape). Further, as shown in FIG. 8, the lid heater 34 has a hanging portion 53 that is bent at the root portion (outer peripheral end portion) of the reinforcing portion 52 and vertically extends downward.

在隔熱部31的周面，跨越上下方向全長而形成有第1缺口部54。在第1缺口部54插通垂下部53，可防止或大致防止垂下部53從隔熱部31的周面突出。並且，垂下部53是氣密地貫通基底24及密封蓋25，連接至未圖示的給電部，垂下部53的貫通部是藉由真空用接頭等預定的密封構件來密封。 The first notch portion 54 is formed on the circumferential surface of the heat insulating portion 31 across the entire length in the vertical direction. The first notch portion 54 is inserted into the hanging portion 53 to prevent or substantially prevent the hanging portion 53 from protruding from the circumferential surface of the heat insulating portion 31. Further, the hanging portion 53 is airtightly penetrated through the base 24 and the sealing cover 25, and is connected to a power feeding portion (not shown), and the through portion of the hanging portion 53 is sealed by a predetermined sealing member such as a vacuum joint.

另外，形成有第1缺口部54的位置，亦即形成有補強部52的位置是氣體排氣部17的上方，補強部52與氣體排氣部17是面方向一致或大略一致。 Further, the position where the first notch portion 54 is formed, that is, the position where the reinforcing portion 52 is formed is above the gas exhaust portion 17, and the reinforcing portion 52 and the gas exhaust portion 17 are aligned in the plane direction or substantially coincident.

在隔熱部31的上面，在與發熱部51之間以預定角度間距設有複數的間隔件55，在間隔件55與發熱部51之間形成間隙。間隔件55是藉由石英等的隔熱構件 所形成，蓋加熱器34經年劣化而變形時，可防止發熱部51與隔熱部31直接接觸。 On the upper surface of the heat insulating portion 31, a plurality of spacers 55 are provided at a predetermined angular interval from the heat generating portion 51, and a gap is formed between the spacers 55 and the heat generating portion 51. The spacer 55 is a heat insulating member made of quartz or the like When the cover heater 34 is deformed by deterioration over the years, the heat generating portion 51 can be prevented from coming into direct contact with the heat insulating portion 31.

又，熱電偶等的第2溫度感測器39是設成前端部會接觸於發熱部51的上面。第2溫度感測器39是藉由設於發熱部51的溫度測定構件支撐部之支援部56來固定前端部的位置。支援部56是設於從補強部52的根部90°變位的位置更預定角度例如5°變位的位置，使發熱部51與第2溫度感測器39的接觸長(接觸面積)變大。又，第2溫度感測器39與發熱部51的關係是平面視對於發熱部51的中心線所形成的假想圓(中心圓)而言，第2溫度感測器39的中心線會成為接線或大致接線。 Further, the second temperature sensor 39 such as a thermocouple is provided such that the tip end portion comes into contact with the upper surface of the heat generating portion 51. The second temperature sensor 39 is a position at which the front end portion is fixed by the support portion 56 provided in the temperature measuring member support portion of the heat generating portion 51. The support portion 56 is a position that is displaced at a predetermined angle, for example, 5° from a position at which the root portion of the reinforcing portion 52 is displaced by 90°, and the contact length (contact area) between the heat generating portion 51 and the second temperature sensor 39 is increased. . Further, the relationship between the second temperature sensor 39 and the heat generating portion 51 is a virtual circle (center circle) formed by the center line of the heat generating portion 51 in plan view, and the center line of the second temperature sensor 39 is wired. Or roughly wired.

第2溫度感測器39的基端側是朝隔熱部31的周緣部延伸出，在隔熱部31的周緣部朝垂直下方彎曲。彎曲部是在隔熱部31的周面插通於跨越上下方向全長而形成的第2缺口部57，經由真空用接頭等預定的密封構件來氣密地貫通基底24及密封蓋25，電性連接至溫度控制部38。 The proximal end side of the second temperature sensor 39 extends toward the peripheral edge portion of the heat insulating portion 31, and is bent vertically downward at the peripheral portion of the heat insulating portion 31. The curved portion is inserted into the second notch portion 57 formed over the entire length in the vertical direction on the circumferential surface of the heat insulating portion 31, and is hermetically penetrated through the base portion 24 and the sealing cover 25 via a predetermined sealing member such as a vacuum joint or the like. It is connected to the temperature control unit 38.

第2溫度感測器39也與蓋加熱器34的垂下部53同樣，藉由插通於第2缺口部57，使不會從隔熱部31的周面突出。 Similarly to the hanging portion 53 of the lid heater 34, the second temperature sensor 39 is inserted into the second notch portion 57 so as not to protrude from the circumferential surface of the heat insulating portion 31.

其次，在圖10~圖13中說明有關蓋加熱器34的詳細。補強部52的V字形的頂角是例如成為60°。又，如圖10所示般，若將發熱部51與補強部52的境界間的距離(V字形的底邊的長度)設為D1，則施加於發 熱部51與補強部52的境界部的力，有關對於隔熱部31的周面之接線方向的力矩M1，依距離D1而產生的反力會被減輕。又，若將補強部52之自發熱部51的突出距離(從發熱部51的中心圓到V字形的頂點為止的距離)設為D2，則有關自隔熱部31離反的方向的力矩(半徑方向的力矩)M2，依距離D2而產生的反力會被減輕。 Next, the details of the lid heater 34 will be described with reference to Figs. 10 to 13 . The apex angle of the V-shape of the reinforcing portion 52 is, for example, 60°. Further, as shown in FIG. 10, when the distance between the boundary between the heat generating portion 51 and the reinforcing portion 52 (the length of the bottom side of the V-shape) is D1, it is applied to the hair. The force of the boundary portion between the hot portion 51 and the reinforcing portion 52 with respect to the moment M1 in the wiring direction of the circumferential surface of the heat insulating portion 31 is reduced by the reaction force generated by the distance D1. When the protruding distance of the self-heating portion 51 of the reinforcing portion 52 (the distance from the center circle of the heat generating portion 51 to the apex of the V-shaped portion) is D2, the moment (radius) in the direction from the heat insulating portion 31 is reversed. The direction of the moment M2, the reaction force generated by the distance D2 will be alleviated.

蓋加熱器34是具有剖面圓形的框體之石英製的保護構件58、及被***至保護構件58內的導線59，導線59是成為例如鎳製之1卷的導線。導線59是以發熱部51與補強部52的境界部為發熱點，在發熱部51內形成發熱體，例如線圈狀的電阻發熱體61，藉由使通電至電阻發熱體61，蓋加熱器34會發熱。 The cover heater 34 is a quartz protective member 58 having a frame having a circular cross section, and a wire 59 inserted into the protective member 58. The wire 59 is a wire made of, for example, nickel. The lead wire 59 is a heat generating point of the boundary portion between the heat generating portion 51 and the reinforcing portion 52, and a heat generating body, for example, a coil-shaped resistance heating element 61 is formed in the heat generating portion 51, and the heater heater 61 is energized to cover the heater 34. Will be hot.

***通於發熱部51內的導線59是在補強部52內合流，在被捆束的狀態下垂下至垂下部53內。而且，導線59是在補強部52內分別安裝有絶緣構件的保護玻璃62，藉由保護玻璃62來彼此絶緣。 The wires 59 inserted into the heat generating portion 51 merge in the reinforcing portion 52, and are suspended in the hanging portion 53 in a bundled state. Further, the wire 59 is a cover glass 62 to which the insulating members are respectively attached in the reinforcing portion 52, and is insulated from each other by the cover glass 62.

保護玻璃62是例如藉由多數連結的圓柱狀的陶瓷玻璃所構成，在陶瓷玻璃中插通導線59，又，藉由縮小被連結的陶瓷玻璃間的間隔，確保被捆束的導線59間的絶緣性。 The cover glass 62 is formed, for example, by a plurality of connected cylindrical ceramic glasses, in which the wires 59 are inserted into the ceramic glass, and the space between the bundled wires 59 is ensured by narrowing the interval between the joined ceramic glasses. Insulation.

又，垂下部53內，被捆束的導線59之中，僅一方會***通於保護玻璃62。另外，當垂下部53的徑可充分確保時，亦可將被捆束的導線59的雙方插通於保護玻璃62。 Further, only one of the bundled wires 59 in the hanging portion 53 is inserted into the cover glass 62. Further, when the diameter of the hanging portion 53 can be sufficiently ensured, both of the bundled wires 59 can be inserted into the cover glass 62.

垂下部53的下端是在利用藉由矽等的絶緣構件所形成的蓋63來氣密且電性絶緣的狀態下被密封。亦即，電阻發熱體61是在被電性絶緣的狀態下，氣密地封入保護構件58內。又，導線59是在藉由Teflon(註冊商標)等的絶緣構件所被覆的狀態下從垂下部53的下端延伸出，連接至未圖示的給電部。 The lower end of the lower portion 53 is sealed in a state of being hermetically and electrically insulated by a cover 63 formed of an insulating member such as a crucible. That is, the resistance heat generating body 61 is hermetically sealed in the protective member 58 in a state of being electrically insulated. Moreover, the lead wire 59 is extended from the lower end of the hanging part 53 in the state covered by the insulating member of Teflon (registered trademark), and is connected to the power supply part not shown.

如上述般，本實施例是可取得以下所示的1個或複數的效果。 As described above, in the present embodiment, one or a plurality of effects shown below can be obtained.

(a)將蓋加熱器的發熱部設為比晶圓的直徑更小的圓弧狀(馬蹄形狀)，且將蓋加熱器的保護構件設為板厚小的石英製，因此蓋加熱器的昇溫及降溫容易，恢復時間會被縮短，可使處理能力提升。 (a) The heat generating portion of the cover heater is formed in an arc shape (horse shape) smaller than the diameter of the wafer, and the protective member of the cover heater is made of quartz having a small thickness, so that the cover heater is It is easy to heat up and cool down, the recovery time will be shortened, and the processing capacity will be improved.

(b)由於蓋加熱器的直徑比晶圓的直徑更小，因此不會有妨礙從氣體導入孔往氣體排氣部流動的氣體之流動的情形，氣體會被均一地供給至晶圓的表面，可使晶圓的面內均一性提升。 (b) Since the diameter of the cover heater is smaller than the diameter of the wafer, there is no possibility of obstructing the flow of the gas flowing from the gas introduction hole to the gas exhaust portion, and the gas is uniformly supplied to the surface of the wafer. , the in-plane uniformity of the wafer can be improved.

(c)由於藉由蓋加熱器來積極地加熱比最下段的晶圓的周緣部更中心側的環狀領域，因此最下段的晶圓的周緣部藉由側部加熱器及蓋加熱器來2重加熱的情形會被防止，可有效率地均一加熱溫度容易下降的底部領域，可使晶圓的面內溫度均一性提升。 (c) Since the cover heater actively heats the annular region on the center side of the peripheral portion of the lowermost wafer, the peripheral portion of the lowermost wafer is provided by the side heater and the cover heater. The case of double heating is prevented, and the bottom field in which the temperature is easily lowered can be efficiently and uniformly heated, and the in-plane temperature uniformity of the wafer can be improved.

(d)由於蓋加熱器是具有從發熱部突出至外周側的V字形的補強部，使從補強部的根彎曲至下方而形成垂下部，因此不用另外設置補強構件，可確保蓋加熱器的強 度，可謀求零件點數的減低。 (d) Since the cover heater is a V-shaped reinforcing portion that protrudes from the heat generating portion to the outer peripheral side, the root portion is bent from the root of the reinforcing portion to the lower portion to form a hanging portion. Therefore, it is not necessary to separately provide a reinforcing member to secure the cover heater. Strong Degree, the number of parts can be reduced.

(e)由於補強部位於氣體排氣部的上方，因此即使氣體因為V字形的補強部而產生亂流，還是可迅速地排除亂流，抑制亂流的發生，對晶圓均一地供給氣體，可使面內均一性提升。 (e) Since the reinforcing portion is located above the gas exhausting portion, even if the gas is turbulent due to the V-shaped reinforcing portion, the turbulent flow can be quickly eliminated, and the occurrence of turbulent flow can be suppressed, and the gas can be uniformly supplied to the wafer. Can improve the in-plane uniformity.

(f)由於垂下部是在跨越於隔熱部的上下方向全長而形成的第1缺口部中插通，使垂下部不會從隔熱部的周面突出，因此可防止氣體的流動因為垂下部而被妨礙。 (f) Since the hanging portion is inserted into the first notch portion formed over the entire length of the heat insulating portion in the vertical direction, the hanging portion does not protrude from the circumferential surface of the heat insulating portion, so that the flow of the gas can be prevented from falling. The Ministry was hampered.

(g)由於在垂下部內被捆束的導線之中僅一方會***通於保護玻璃，因此可縮小垂下部的內徑，可謀求蓋加熱器的省空間化。 (g) Since only one of the wires bundled in the hanging portion is inserted into the cover glass, the inner diameter of the hanging portion can be reduced, and the space for the cover heater can be reduced.

(h)由於蓋加熱器是被固定性地設置，晶舟對於蓋加熱器可獨立旋轉，因此使用蓋加熱器時的晶圓的加熱不均會被抑制，可均一地加熱晶圓。 (h) Since the lid heater is fixedly disposed, the wafer boat can be independently rotated with respect to the lid heater, so that uneven heating of the wafer when the lid heater is used can be suppressed, and the wafer can be uniformly heated.

(i)由於在隔熱部的上面設置間隔件，因此不會有蓋加熱器因熱變形，垂下時與隔熱部直接接觸的情形，不會有隔熱部奪熱的情形，可使蓋加熱器的耐久性提升。 (i) Since the spacer is provided on the upper surface of the heat insulating portion, the cover heater is not thermally deformed, and when it is suspended, it is in direct contact with the heat insulating portion, and the heat insulating portion is not heated, so that the cover can be heated. The durability of the device is improved.

(j)由於將第2溫度感測器設成接觸於蓋加熱器的發熱部的上面，可由被加熱體的晶圓側來計測蓋加熱器的溫度，因此蓋加熱器的溫度的測定精度會提升，加熱控制性會提升，可使晶圓的面內均一性提升。 (j) Since the second temperature sensor is placed in contact with the upper surface of the heat generating portion of the lid heater, the temperature of the lid heater can be measured from the wafer side of the object to be heated, so that the temperature of the lid heater can be accurately measured. Improvement, heating control will be improved, and the in-plane uniformity of the wafer can be improved.

(k)由於第2溫度感測器是藉由設在發熱部之從補強部的根部90°變位的位置更預定角度變位的位置之支援部來固定，因此第2溫度感測器與發熱部的接觸面積會變 大，可短時間加熱保護熱電偶的石英管，可縮小測定誤差，且可容易對位第2溫度感測器。 (k) The second temperature sensor is fixed by a support portion provided at a position where the heat generating portion is displaced by a predetermined angle from a position at which the root portion of the reinforcing portion is displaced by 90°. Therefore, the second temperature sensor and the second temperature sensor are The contact area of the heating part will change Large, can heat the quartz tube of the thermocouple for a short time, can reduce the measurement error, and can easily align the second temperature sensor.

(l)藉由將蓋加熱器的加熱位置設為晶圓的半徑的中間或中間附近，處理室內的底部領域之外周側與中心側的溫度差會變小，底部領域會有效率地均一加熱，可使晶圓的溫度的面內均一性更提升。 (l) By setting the heating position of the lid heater to the middle or the middle of the radius of the wafer, the temperature difference between the peripheral side and the center side of the bottom field in the processing chamber becomes small, and the bottom field is efficiently heated uniformly. , the in-plane uniformity of the temperature of the wafer can be improved.

(m)藉由蓋加熱器來加熱處理室下部的溫度容易降低的部分，可使均熱長延伸至處理室下方，因此可削減虛擬晶圓。亦即，可增加製品晶圓的處理片數，可使生產性提升。 (m) By heating the lid portion to heat the portion of the lower portion of the processing chamber where the temperature is easily lowered, the soaking length can be extended to the lower portion of the processing chamber, so that the dummy wafer can be reduced. That is, the number of processed wafers of the product wafer can be increased, and productivity can be improved.

圖14是表示第1實施例的變形例。在變形例中，與蓋加熱器34同心設置直徑比蓋加熱器34更小的蓋加熱器34’。另外，該蓋加熱器34’的構造是與蓋加熱器34同等，因此說明省略。 Fig. 14 is a view showing a modification of the first embodiment. In the modified example, a cover heater 34' having a smaller diameter than the cover heater 34 is disposed concentrically with the cover heater 34. Further, the structure of the lid heater 34' is equivalent to that of the lid heater 34, and therefore the description is omitted.

變形例的情況，加深第1缺口部54的缺口深度，使蓋加熱器34的垂下部53(參照圖8)與蓋加熱器34’的垂下部(未圖示)一起插通於第1缺口部54，藉此可使垂下部不從隔熱部31的周面突出而設。 In the case of the modification, the depth of the notch of the first notch portion 54 is deepened, and the hanging portion 53 (see FIG. 8) of the lid heater 34 is inserted into the first gap together with the hanging portion (not shown) of the lid heater 34'. The portion 54 can thereby provide the hanging portion without protruding from the circumferential surface of the heat insulating portion 31.

在環狀領域內設置複數個蓋加熱器34，設為可個別控制各蓋加熱器34，藉此蓋加熱器34之加熱控制性更提升，可更有效地加熱底部領域，可使晶圓8的面內溫度均一性更提升。另外，在圖14中，雖僅設置1個第2溫度感測器39，但藉由將第2溫度感測器39設於各蓋加熱器34，可成為更細的溫度控制，可使加熱控制性更 提升。 A plurality of cover heaters 34 are provided in the annular region, so that the cover heaters 34 can be individually controlled, whereby the heating controllability of the cover heaters 34 is further improved, and the bottom region can be heated more efficiently, so that the wafers 8 can be made. The in-plane temperature uniformity is improved. In addition, although only one second temperature sensor 39 is provided in FIG. 14, by providing the second temperature sensor 39 to each of the cover heaters 34, it is possible to achieve finer temperature control and heat generation. More controllable Upgrade.

其次，在圖15中，說明有關本發明的第2實施例。另外，對於與圖15中、圖7中同等者附上同符號，省略其說明。 Next, a second embodiment of the present invention will be described with reference to Fig. 15 . It is to be noted that the same reference numerals are given to the same as those in FIG. 15 and FIG. 7 , and the description thereof will be omitted.

在第2實施例中，蓋加熱器34是具有：外圓部66a與內圓部66b成為同心多重圓狀的2重構造的發熱部66。又，蓋加熱器34是***通於第1缺口部54的垂下部53(參照圖8)會沿著隔熱部31的上面而彎曲，具有朝該隔熱部31的中心延伸出的延出部65。 In the second embodiment, the lid heater 34 is a heat generating portion 66 having a double-weight structure in which the outer circular portion 66a and the inner circular portion 66b are concentrically multi-circular. Further, the lid heater 34 is bent along the upper surface of the heat insulating portion 31 by the hanging portion 53 (see FIG. 8) inserted through the first notch portion 54, and has a length extending toward the center of the heat insulating portion 31. Out of section 65.

外圓部66a是在基端側藉由焊接等來與延出部65牢固連接。又，外圓部66a與內圓部66b是在與延出部65大略對向的位置，亦即在前端側藉由焊接來牢固連接。另外，在前端側，外圓部66a彼此間、及內圓部66b彼此間是未被連接，發熱部66的前端成為離反的狀態。亦即，發熱部66是外圓部66a與內圓部66b成為1卷一體化的2重構造。另外，雖未圖示，但與第1實施例同樣，以延出部65與外圓部66a的境界部作為發熱點，在發熱部66內封入線圈狀的電阻發熱體。 The outer round portion 66a is firmly connected to the extension portion 65 by welding or the like on the proximal end side. Further, the outer circular portion 66a and the inner circular portion 66b are located at a position slightly opposed to the extended portion 65, that is, the front end side is firmly connected by welding. Further, on the distal end side, the outer circular portions 66a and the inner circular portion 66b are not connected to each other, and the distal end of the heat generating portion 66 is in a reversed state. In other words, the heat generating portion 66 has a double structure in which the outer round portion 66a and the inner round portion 66b are integrated into one roll. In the same manner as in the first embodiment, the coil-shaped resistance heating element is sealed in the heat generating portion 66 by using the boundary portion between the extended portion 65 and the outer circular portion 66a as a heat generating point.

在第2實施例中，發熱部66成為2重。因此，可使蓋加熱器34的輸出增加，可更有效地加熱處理室6(參照圖1)下部的底部領域。又，蓋加熱器34是可藉由1卷的導線59(參照圖11)所作成，因此對於具有2重的發熱部66的蓋加熱器34之給電部是1個即可，可簡略化控制系，且可削減零件點數。 In the second embodiment, the heat generating portion 66 is double. Therefore, the output of the cover heater 34 can be increased, and the bottom field of the lower portion of the processing chamber 6 (refer to FIG. 1) can be more efficiently heated. Further, since the cover heater 34 can be formed by one wire 59 (see FIG. 11), the power supply unit of the cover heater 34 having the double heat generating portion 66 can be one, and the control can be simplified. System, and can reduce the number of parts.

圖16是表示本發明的第2實施例的變形例。變形例是將第2實施例的延出部65設為與第1實施例的V字形的補強部52(參照圖7)同形狀的補強部67。 Fig. 16 is a view showing a modification of the second embodiment of the present invention. In the modification, the extension portion 65 of the second embodiment is a reinforcing portion 67 having the same shape as the V-shaped reinforcing portion 52 (see FIG. 7) of the first embodiment.

藉由在補強部67的根部使彎曲至下方，使形成垂下部(未圖示)，可使對於蓋加熱器34之沿著隔熱部31的周面的方向、及從隔熱部31離反的方向之強度提升。 By forming the hanging portion (not shown) at the base of the reinforcing portion 67 so as to be bent downward, the direction of the cover heater 34 along the circumferential surface of the heat insulating portion 31 and the distance from the heat insulating portion 31 can be reversed. The strength of the direction is increased.

其次，在圖17、圖18中，說明有關本發明的第3實施例。另外，對於與圖7中同等者附上同符號，省略其說明。 Next, a third embodiment of the present invention will be described with reference to Figs. 17 and 18 . Incidentally, the same reference numerals are attached to the same as in FIG. 7, and the description thereof will be omitted.

第3實施例是平面視，將垂下部53形成於發熱部51的中心。並且，具有在垂下部53的上方彎曲於水平方向，從隔熱部31的中心往外方延伸出的延出部65。延出部65是以能夠連接至發熱部51的兩端之方式形成一對的I字形狀，在垂下部53的上端合流成一個。第2溫度感測器39是從發熱部51的中心沿著隔熱部31的上面而水平彎曲於與延出部65相反方向，形成連接至發熱部51的側面。如圖19所示般，垂下部53的上端是一對的延出部65及第2溫度感測器39會合流，因此比垂下部53的下方更大徑。第2溫度感測器39是封入檢測出發熱部51的溫度之第1溫度感測器39B及檢測出底部領域的中心附近的溫度之第2感測器39B。 The third embodiment is a plan view, and the hanging portion 53 is formed at the center of the heat generating portion 51. Further, it has an extension portion 65 that is bent upward in the horizontal direction above the hanging portion 53 and extends outward from the center of the heat insulating portion 31. The extension portion 65 is formed in a pair of I-shapes so as to be connectable to both ends of the heat generating portion 51, and merges into one at the upper end of the vertical portion 53. The second temperature sensor 39 is horizontally curved from the center of the heat generating portion 51 along the upper surface of the heat insulating portion 31 in a direction opposite to the extending portion 65 to form a side surface connected to the heat generating portion 51. As shown in FIG. 19, the upper end of the vertical portion 53 has a pair of extending portions 65 and the second temperature sensor 39 merged, and therefore has a larger diameter than the lower portion of the lower portion 53. The second temperature sensor 39 is a first temperature sensor 39B that seals the temperature of the heat generating unit 51 and a second sensor 39B that detects the temperature in the vicinity of the center of the bottom field.

發熱部51是形成大略心形曲線形(心臟形)。換言之，發熱部51是形成使心形曲線形的尖點分 離的形狀。與第1實施例同樣，以延出部65與發熱部51的境界部作為發熱點，在發熱部51內封入線圈狀的電阻發熱體。最好心形曲線形的曲線部分是形成真圓狀。垂下部53是設置成貫通：孔30、密封蓋25及基底24。 The heat generating portion 51 is formed into a substantially heart-shaped curved shape (heart shape). In other words, the heat generating portion 51 is formed into a sharp point which makes the heart shape curved. The shape of the separation. In the same manner as in the first embodiment, the coil-shaped resistance heating element is sealed in the heat generating portion 51 by using the boundary portion between the extended portion 65 and the heat generating portion 51 as a heat generating point. Preferably, the curved portion of the heart-shaped curve is formed into a true circle. The hanging portion 53 is provided to penetrate through the hole 30, the sealing cover 25, and the base 24.

由於電阻發熱體被封入至心形曲線形的尖點，因此可增加發熱部51之環狀領域內的加熱部分，可使蓋加熱器34的加熱性能提升。藉此，可更有效地加熱底部領域，可使晶圓8的面內溫度均一性更提升。又，由於平面視藉由設置於發熱部51的中心位置的垂下部53來支撐發熱部51，因此不易產生經年劣化所造成發熱部51的垂下或變形。可長期性地運用蓋加熱器34，因此可使生產性提升。 Since the resistance heating body is sealed to the cusp of the heart-shaped curved shape, the heating portion in the annular region of the heat generating portion 51 can be increased, and the heating performance of the cover heater 34 can be improved. Thereby, the bottom field can be heated more efficiently, and the in-plane temperature uniformity of the wafer 8 can be improved. Further, since the heat generating portion 51 is supported by the hanging portion 53 provided at the center position of the heat generating portion 51 in the plan view, it is less likely to cause the heat generating portion 51 to hang down or be deformed due to deterioration over the years. The cover heater 34 can be used for a long period of time, so that productivity can be improved.

另外，第1實施例、第2實施例及第3實施例是以線圈狀的電阻發熱體作為發熱體，但當然亦可使用鹵素燈等的燈加熱器作為線圈狀的電阻發熱體。 In addition, in the first embodiment, the second embodiment, and the third embodiment, a coil-shaped resistance heating element is used as the heating element. However, a lamp heater such as a halogen lamp may be used as the coil-shaped resistance heating element.

不限於上述例示的氧化膜形成，在氮化膜形成中也可適用本發明。例如，藉由使用上述例示的原料氣體、及作為反應氣體的NH3氣體，可形成氮化膜。 The present invention is not limited to the above-described oxide film formation, and the present invention is also applicable to the formation of a nitride film. For example, a nitride film can be formed by using the material gas exemplified above and the NH 3 gas as a reaction gas.

而且，在形成包含鈦(Ti)、鋯(Zr)、鉿(Hf)、鉭(Ta)、鈮(Nb)、鋁(Al)、鉬(Mo)、鎢(W)等的金屬元素之金屬系薄膜時，本發明也可適用。 Further, a metal containing a metal element such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W), or the like is formed. The present invention is also applicable to a film.

(本發明的較佳形態) (Preferred form of the invention)

以下，附記有關本發明的實施較佳形態。 Hereinafter, a preferred embodiment of the present invention will be described.

(附記1) (Note 1)

若根據本發明之一形態，則可提供一種基板處理裝置，係具備：基板保持具，其係保持複數片的基板；隔熱部，其係設於前述基板保持具的下方；反應管，其係於內部具有處理前述基板的處理室；第1加熱部，其係設於前述反應管的周圍；及第2加熱部，其係設於前述基板保持具與前述隔熱部之間，又，前述第2加熱部具有：大略環狀的發熱部；及比前述發熱部還延伸至下方的垂下部，前述發熱部係構成收於比前述基板小徑的環狀領域。 According to an aspect of the present invention, a substrate processing apparatus including: a substrate holder that holds a plurality of substrates; a heat insulating portion that is disposed under the substrate holder; and a reaction tube; a processing chamber for processing the substrate; a first heating portion disposed around the reaction tube; and a second heating portion disposed between the substrate holder and the heat insulating portion, The second heating unit includes a heat generating portion having a substantially annular shape, and a lower portion extending further downward than the heat generating portion, and the heat generating portion is configured to form an annular region that is smaller than a diameter of the substrate.

(附記2) (Note 2)

如附記1記載的裝置，其中，最好前述環狀領域為前述基板的直徑的1/5以上3/5以下。 In the apparatus according to the first aspect, the annular region is preferably 1/5 or more and 3/5 or less of the diameter of the substrate.

(附記3) (Note 3)

如附記1或2記載的裝置，其中，最好在前述發熱部的表面連接溫度測定構件。 In the apparatus according to the first aspect or the second aspect, preferably, the temperature measuring member is connected to the surface of the heat generating portion.

(附記4) (Note 4)

如附記1~3中的任一記載的裝置，其中，最好前述第1加熱部係具備：上部加熱器，其係加熱前述處理室內之收納有前述基板保持具的上部領域；及下部加熱器，其係加熱前述處理室內之收納有前述隔熱部的下部領域，又，前述發熱部係設置於至少前述上部加熱器與前述下部加熱器的境界的高度位置以上的高度。 In the apparatus according to any one of the preceding claims, the first heating unit includes: an upper heater that heats an upper field in which the substrate holder is housed in the processing chamber; and a lower heater The heating unit is configured to heat the lower portion of the processing chamber in which the heat insulating portion is housed, and the heat generating portion is provided at a height equal to or higher than a height position of the upper heater and the lower heater.

(附記5) (Note 5)

如附記4記載的裝置，其中，最好前述發熱部的溫度為前述下部加熱器的溫度以下。 In the apparatus according to attachment 4, it is preferable that the temperature of the heat generating portion is equal to or lower than the temperature of the lower heater.

(附記6) (Note 6)

如附記1~3中的任一記載的裝置，其中，最好前述發熱部係形成圓弧狀(馬蹄形狀)。 In the device according to any one of the above aspects, the heat generating portion is preferably formed in an arc shape (horse shape).

(附記7) (Note 7)

如附記4記載的裝置，其中，最好前述第2加熱部係具有：從前述發熱部朝外周側突出的V字形的補強部。 In the apparatus according to the fourth aspect of the invention, the second heating unit preferably has a V-shaped reinforcing portion that protrudes from the heat generating portion toward the outer peripheral side.

(附記8) (Note 8)

如附記3記載的裝置，其中，最好在前述發熱部設有 溫度測定構件支撐部，藉由前述溫度測定構件支撐部，在溫度檢測器接觸於前述發熱部的上面之狀態下被支撐。 The device according to the third aspect, wherein the heat generating portion is preferably provided The temperature measuring member supporting portion is supported by the temperature measuring member supporting portion in a state where the temperature detector contacts the upper surface of the heat generating portion.

(附記9) (Note 9)

如附記8記載的裝置，其中，最好前述溫度測定構件支撐部係設置於前述溫度檢測器的中心線對於形成有前述發熱部的中心線的假想圓成為接線或大致接線的位置。 In the apparatus according to the eighth aspect of the invention, preferably, the temperature measuring member supporting portion is provided at a position where a center line of the temperature detector is connected to a virtual circle in which a center line of the heat generating portion is formed, or is substantially wired.

(附記10) (Note 10)

如附記7記載的裝置，其中，最好前述補強部的根部與前述垂下部連接，在前述垂下部內，1對的發熱體之中僅一方安裝絶緣構件。 In the apparatus according to the seventh aspect of the invention, preferably, the root portion of the reinforcing portion is connected to the hanging portion, and in the hanging portion, only one of the pair of heat generating members is provided with an insulating member.

(附記11) (Note 11)

如附記8記載的裝置，其中，最好在前述隔熱部上面的前述發熱部的下方設有間隔件，在前述間隔件與前述發熱部之間形成有間隙。 In the apparatus according to the eighth aspect of the invention, preferably, a spacer is provided below the heat generating portion on the upper surface of the heat insulating portion, and a gap is formed between the spacer and the heat generating portion.

(附記12) (Note 12)

如附記11記載的裝置，其中，最好前述補強部係設在前述處理室的排氣部的上方。 In the apparatus according to the eleventh aspect, preferably, the reinforcing portion is provided above the exhaust portion of the processing chamber.

(附記13) (Note 13)

如附記1或2記載的裝置，其中，最好前述第2加熱 部係同心地設置複數。 The device according to the first or second aspect, wherein the second heating is preferably performed Departments set the plurals concentrically.

(附記14) (Note 14)

如附記1或2記載的裝置，其中，最好前述發熱部係具有同心多重圓狀地設置的外圓部及內圓部，前述外圓部會在基端側與前述補強部連接，前述外圓部與前述內圓部會在前端側連接。 In the apparatus according to the first aspect or the second aspect, the heat generating portion preferably has an outer circular portion and an inner circular portion which are concentrically arranged in a circular shape, and the outer circular portion is connected to the reinforcing portion at a proximal end side, and the outer portion is The round portion and the inner round portion are connected to the front end side.

(附記15) (Note 15)

如附記1~14中的任一記載的裝置，其中，最好在前述隔熱部的周面跨越上下方向全長形成有缺口部，在前述缺口部插通前述垂下部。 In the apparatus according to any one of the first to fourth aspects, the notch portion is formed on the circumferential surface of the heat insulating portion over the entire length in the vertical direction, and the cutout portion is inserted into the cutout portion.

(附記16) (Note 16)

如附記1或2記載的裝置，最好前述發熱部係形成心形曲線形(心臟形)。 In the device according to the first or second aspect, it is preferable that the heat generating portion has a heart-shaped curved shape (heart shape).

(附記17) (Note 17)

如附記16記載的裝置，最好前述垂下部係平面視形成於前述發熱部的中心位置。 In the device described in the appended item 16, it is preferable that the hanging portion is formed in a plan view at a center position of the heat generating portion.

(附記18) (Note 18)

如附記2記載的裝置，最好前述環狀領域為前述基板的直徑的1/5以上3/5以下。 In the device described in the second aspect, it is preferable that the annular region is 1/5 or more and 3/5 or less of the diameter of the substrate.

(附記19) (Note 19)

如附記18記載的裝置，最好前述環狀領域為前述基板的直徑的3/10以上8/15以下。 In the device according to the eighteenth aspect, it is preferable that the annular region is 3/10 or more and 8/15 or less of the diameter of the substrate.

(附記20) (Note 20)

如附記1~19中的任一記載的裝置，其中，最好前述發熱部的直徑為可在最下段的基板的面內溫度分布成為均一的位置加熱的大小。 In the apparatus according to any one of the above aspects, the diameter of the heat generating portion is preferably a size that can be heated at a uniform temperature in the in-plane temperature distribution of the lowermost substrate.

(附記21) (Note 21)

若根據本發明的其他的形態，則可提供一種基板處理方法或半導體裝置的製造方法，其係具有：將配置在隔熱部的上方保持複數的基板的基板保持具搬入至處理室內之工程；設在前述處理室的周圍的第1加熱部及設在前述基板保持具與前述隔熱部之間的大略環狀的第2加熱部會加熱前述處理室內之工程；及對前述處理室內供給處理氣體之工程，在加熱前述處理室內的工程中，形成收於比前述基板小徑的環狀領域的前述第2加熱部的前述發熱部會加熱前述處理室內的底部領域。 According to another aspect of the present invention, there is provided a substrate processing method or a method of manufacturing a semiconductor device, comprising: projecting a substrate holder in which a plurality of substrates disposed above a heat insulating portion are carried into a processing chamber; a first heating unit provided around the processing chamber and a second annular heating unit provided between the substrate holder and the heat insulating portion to heat the processing chamber; and supply processing to the processing chamber In the gas project, in the process of heating the processing chamber, the heat generating portion that forms the second heating portion in the annular region having a smaller diameter than the substrate heats the bottom portion of the processing chamber.

(附記22) (Note 22)

若根據本發明的另外其他的形態，則可提供一種使實行於電腦的程式或記錄該程式的電腦可讀取的記録媒體，該程式係具有：將配置在隔熱部的上方保持複數的基板的基板保持具搬入至處理室內之程序；設在前述處理室的周圍的第1加熱部及設在前述基板保持具與前述隔熱部之間的大略環狀的第2加熱部會加熱前述處理室內之程序；及對前述處理室內供給處理氣體之程序，在加熱前述處理室內的程序中，形成收於比前述基板小徑的環狀領域的前述第2加熱部的前述發熱部會加熱前述處理室內的底部領域。 According to still another aspect of the present invention, there is provided a computer-readable recording medium that is executed in a computer or a computer that records the program, the program having: a substrate that is disposed above the heat insulating portion a process of loading the substrate holder into the processing chamber; and a first heating portion provided around the processing chamber and a second annular heating portion provided between the substrate holder and the heat insulating portion heat the treatment In the program for supplying the processing gas to the processing chamber, in the program for heating the processing chamber, the heat generating portion that forms the second heating portion in the annular region having a smaller diameter than the substrate heats the processing The bottom area of the interior.

(附記23) (Note 23)

若根據本發明的另外其他的形態，則可提供一種加熱部，係設置於基板保持具與隔熱部之間的加熱部，該基板保持具係保持複數的基板，該隔熱部係設置於前述基板保持具的下方，前述加熱部係具有：大略環狀的發熱部；及比前述發熱部還延伸至下方的垂下部，以前述發熱部能夠收於比前述基板小徑的環狀領域之方式構成前述發熱部。 According to still another aspect of the present invention, a heating unit provided in a heating unit between the substrate holder and the heat insulating portion, wherein the substrate holder holds a plurality of substrates, the heat insulating portion is provided on In the lower portion of the substrate holder, the heating portion includes a heat generating portion having a substantially annular shape, and a lower portion extending further downward than the heat generating portion, and the heat generating portion can be housed in an annular region having a smaller diameter than the substrate. The method constitutes the heat generating portion.

(附記24) (Note 24)

若根據本發明的另外其他的形態，則可提供一種基板處理裝置，其係具備：基板保持具，其係保持基板；隔熱部，其係設於該基板保持具的下方；反應管，其係劃成處理基板的處理室；第1加熱部，其係設成圍繞該反應管的周圍；第2加熱部，其係設於前述基板保持具與前述隔熱部之間，該第2加熱部係比基板更小徑的環狀，構成加熱前述處理室下部的徑方向的一部分。 According to still another aspect of the present invention, a substrate processing apparatus including: a substrate holder that holds a substrate; a heat insulating portion that is disposed under the substrate holder; and a reaction tube; a processing chamber for processing a substrate; a first heating portion surrounding the reaction tube; and a second heating portion disposed between the substrate holder and the heat insulating portion, the second heating The ring-shaped portion having a smaller diameter than the substrate constitutes a part of the radial direction of the lower portion of the processing chamber.

(附記25) (Note 25)

若根據本發明的另外其他的形態，則可提供一種基板處理方法或半導體裝置的製造方法，其係具有：將保持基板的基板保持具裝入處理室內之工程；第1加熱部及第2加熱部會加熱前述處理室內之工程；對該處理室內供給或排除處理氣體之工程；及從前述處理室內裝卸前述基板保持具之工程，在加熱前述處理室內的工程中，前述第2加熱部會從前述基板保持具的下方環狀地加熱比基板的周緣更中心側徑方向的一部分。 According to still another aspect of the present invention, there is provided a substrate processing method or a method of manufacturing a semiconductor device, comprising: a process of loading a substrate holder holding a substrate into a processing chamber; and a first heating portion and a second heating a part that heats the work in the processing chamber; a process of supplying or removing the processing gas into the processing chamber; and a process of attaching and detaching the substrate holder from the processing chamber, and in the process of heating the processing chamber, the second heating portion is The lower portion of the substrate holder is annularly heated to a portion of the substrate in the radial direction of the peripheral edge of the substrate.

1‧‧‧處理爐 1‧‧‧Processing furnace

2‧‧‧側部加熱器 2‧‧‧Side heater

5‧‧‧反應管 5‧‧‧Reaction tube

6‧‧‧處理室 6‧‧‧Processing room

7‧‧‧晶舟 7‧‧‧The boat

8‧‧‧晶圓 8‧‧‧ wafer

9‧‧‧氣體導入部 9‧‧‧Gas introduction department

12‧‧‧噴嘴 12‧‧‧ nozzle

14‧‧‧質量流控制器(MFC) 14‧‧‧Quality Flow Controller (MFC)

15‧‧‧氣體流量控制部 15‧‧‧Gas Flow Control Department

16‧‧‧氣體導入孔 16‧‧‧ gas introduction hole

17‧‧‧氣體排氣部 17‧‧‧ gas exhaust

18‧‧‧排氣管 18‧‧‧Exhaust pipe

19‧‧‧壓力感測器 19‧‧‧ Pressure Sensor

21‧‧‧APC閥 21‧‧‧APC valve

22‧‧‧真空泵 22‧‧‧Vacuum pump

23‧‧‧壓力控制部 23‧‧‧ Pressure Control Department

24‧‧‧基底 24‧‧‧Base

25‧‧‧密封蓋 25‧‧‧ Sealing cover

26‧‧‧O型環 26‧‧‧O-ring

27‧‧‧旋轉機構 27‧‧‧Rotating mechanism

28‧‧‧旋轉軸 28‧‧‧Rotary axis

29‧‧‧底板 29‧‧‧floor

30‧‧‧孔 30‧‧‧ hole

31‧‧‧隔熱部 31‧‧‧Insulation Department

32‧‧‧底板 32‧‧‧floor

33‧‧‧推壓板 33‧‧‧Pushing plate

34‧‧‧蓋加熱器 34‧‧‧ Cover heater

35‧‧‧晶舟升降機 35‧‧‧Ship boat lift

36‧‧‧驅動控制部 36‧‧‧Drive Control Department

37‧‧‧第1溫度感測器 37‧‧‧1st temperature sensor

38‧‧‧溫度控制部 38‧‧‧ Temperature Control Department

42‧‧‧控制器 42‧‧‧ Controller

Claims (16)

一種基板處理裝置，其特徵係具備：基板保持具，其係保持複數片的基板；隔熱部，其係設於前述基板保持具的下方；處理室，其係收納前述基板保持具，處理前述基板；第1加熱部，其係設置於前述處理室的周圍，從側部加熱前述處理室內；及第2加熱部，其係於前述處理室內，設於前述基板保持具與前述隔熱部之間，又，前述第2加熱部具有：大略環狀的發熱部；及延伸至比前述發熱部還下方的垂下部，前述發熱部係構成收於比前述基板小徑的環狀領域。 A substrate processing apparatus comprising: a substrate holder that holds a plurality of substrates; a heat insulating portion that is disposed under the substrate holder; and a processing chamber that stores the substrate holder, and processes the a substrate; the first heating unit is disposed around the processing chamber, and heats the processing chamber from a side portion; and the second heating unit is disposed in the processing chamber and is disposed in the substrate holder and the heat insulating portion Further, the second heating unit includes a heat generating portion having a substantially annular shape and a hanging portion extending downward from the heat generating portion, and the heat generating portion is configured to form an annular region that is smaller than a diameter of the substrate. 如申請專利範圍第1項之基板處理裝置，其中，前述環狀領域為前述基板的直徑的1/5以上3/5以下。 The substrate processing apparatus according to claim 1, wherein the annular region is 1/5 or more and 3/5 or less of a diameter of the substrate. 如申請專利範圍第1項之基板處理裝置，其中，在前述發熱部的表面連接溫度測定構件。 The substrate processing apparatus according to claim 1, wherein the temperature measuring member is connected to a surface of the heat generating portion. 如申請專利範圍第1項之基板處理裝置，其中，前述第1加熱部係具備：上部加熱器，其係加熱前述處理室內之收納有前述基板保持具的上部領域；及下部加熱器，其係加熱前述處理室內之收納有前述隔熱部的下部領域，又，前述發熱部係設置於至少前述上部加熱器與前述 下部加熱器的境界的高度位置以上的高度。 The substrate processing apparatus according to claim 1, wherein the first heating unit includes an upper heater that heats an upper field in which the substrate holder is housed in the processing chamber, and a lower heater. Heating the lower portion of the processing chamber in which the heat insulating portion is housed, and the heat generating portion is provided in at least the upper heater and the foregoing The height above the height position of the lower heater. 如申請專利範圍第4項之基板處理裝置，其中，前述發熱部的溫度為前述下部加熱器的溫度以下。 The substrate processing apparatus according to claim 4, wherein the temperature of the heat generating portion is equal to or lower than a temperature of the lower heater. 如申請專利範圍第1項之基板處理裝置，其中，前述發熱部係形成馬蹄形狀。 The substrate processing apparatus according to claim 1, wherein the heat generating portion is formed in a horseshoe shape. 如申請專利範圍第3項之基板處理裝置，其中，在前述發熱部設有溫度測定構件支撐部，藉由前述溫度測定構件支撐部，溫度檢測器以接觸於前述發熱部的上面之狀態下被支撐。 The substrate processing apparatus according to claim 3, wherein the heat generating portion is provided with a temperature measuring member supporting portion, and the temperature measuring member supporting portion is in contact with the upper surface of the heat generating portion. support. 如申請專利範圍第1項之基板處理裝置，其中，在前述第2加熱部內封入一卷的導線，前述導線在前述發熱部內形成電阻發熱體。 The substrate processing apparatus according to claim 1, wherein a coil of a wire is sealed in the second heating unit, and the wire forms a resistance heating element in the heat generating portion. 如申請專利範圍第1項之基板處理裝置，其中，前述第2加熱部係具有：從前述發熱部朝外周側突出的V字形的補強部。 The substrate processing apparatus according to the first aspect of the invention, wherein the second heating unit has a V-shaped reinforcing portion that protrudes from the heat generating portion toward the outer peripheral side. 如申請專利範圍第3項之基板處理裝置，其中，在前述發熱部設有溫度測定構件支撐部，藉由前述溫度測定構件支撐部，溫度檢測器以接觸於前述發熱部的上面之狀態下被支撐。 The substrate processing apparatus according to claim 3, wherein the heat generating portion is provided with a temperature measuring member supporting portion, and the temperature measuring member supporting portion is in contact with the upper surface of the heat generating portion. support. 如申請專利範圍第10項之基板處理裝置，其中，在前述隔熱部上面的前述發熱部的下方設有間隔件，在前述間隔件與前述發熱部之間形成有間隙。 The substrate processing apparatus according to claim 10, wherein a spacer is provided below the heat generating portion on the upper surface of the heat insulating portion, and a gap is formed between the spacer and the heat generating portion. 如申請專利範圍第1項之基板處理裝置，其中，在前述隔熱部跨越上下方向全長形成有缺口部，在前述缺 口部插通前述垂下部。 The substrate processing apparatus according to the first aspect of the invention, wherein the heat insulating portion has a notch portion formed over the entire length of the heat insulating portion, and the missing portion The mouth is inserted through the aforementioned lower part. 如申請專利範圍第1項之基板處理裝置，其中，前述發熱部係形成心形曲線形。 The substrate processing apparatus according to claim 1, wherein the heat generating portion has a heart-shaped curved shape. 如申請專利範圍第13項之基板處理裝置，其中，前述垂下部係平面視形成於前述發熱部的中心位置。 The substrate processing apparatus according to claim 13, wherein the hanging plane is formed at a central position of the heat generating portion in plan view. 一種半導體裝置的製造方法，其特徵係具有：將配置在隔熱部的上方保持複數的基板的基板保持具搬入至處理室內之工程；設於前述處理室的周圍的第1加熱部、及於前述處理室內，設於前述基板保持具與前述隔熱部之間，具有大略環狀的發熱部與延伸至比前述發熱部還下方的垂下部的第2加熱部會加熱前述處理室內之工程；及對前述處理室內供給處理氣體之工程，在加熱前述處理室內的工程中，形成收於比前述基板小徑的環狀領域的前述發熱部會加熱前述處理室內的底部領域。 A method of manufacturing a semiconductor device, comprising: a process of loading a substrate holder that holds a plurality of substrates disposed above a heat insulating portion into a processing chamber; and a first heating portion provided around the processing chamber; The processing chamber is provided between the substrate holder and the heat insulating portion, and has a heat generating portion having a substantially annular shape and a second heating portion extending to a lower portion than the heat generating portion to heat the processing chamber; In the process of supplying the processing gas to the processing chamber, in the process of heating the processing chamber, the heat generating portion that is formed in an annular region having a smaller diameter than the substrate heats the bottom portion of the processing chamber. 一種加熱部，係設置於基板保持具與隔熱部之間的加熱部，該基板保持具係保持複數的基板，該隔熱部係設置於前述基板保持具的下方，其特徵為：前述加熱部係具有：大略環狀的發熱部；及延伸至比前述發熱部還下方的垂下部，前述發熱部係構成收於比前述基板小徑的環狀領域。 A heating unit is provided in a heating unit between a substrate holder and a heat insulating portion, wherein the substrate holder holds a plurality of substrates, and the heat insulating portion is disposed under the substrate holder, and is characterized in that the heating The part has a heat generating portion that is substantially annular and extends to a lower portion that is lower than the heat generating portion, and the heat generating portion constitutes an annular region that is smaller than a diameter of the substrate.
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