TW201642106A - Photo-sensing circuit and operation method thereof - Google Patents
Photo-sensing circuit and operation method thereof Download PDFInfo
- Publication number
- TW201642106A TW201642106A TW104116336A TW104116336A TW201642106A TW 201642106 A TW201642106 A TW 201642106A TW 104116336 A TW104116336 A TW 104116336A TW 104116336 A TW104116336 A TW 104116336A TW 201642106 A TW201642106 A TW 201642106A
- Authority
- TW
- Taiwan
- Prior art keywords
- capacitor
- level
- photosensitive
- period
- transistor
- Prior art date
Links
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
本發明是有關於一種感光電路。 The present invention relates to a photosensitive circuit.
在一般傳統的光感元件中,主要包含了一個操作於逆偏壓模式的光電二極體。當光電二極體受到足夠能量的光照時,會產生一定數目的電子以及對應數目的電洞。由於光電二極體操作於逆偏壓,因此電子會往陰極的方向移動,而電洞會往陽極的方向移動,於是乎就產生了光電流。 In a conventional conventional light sensing element, a photodiode operating in a reverse bias mode is mainly included. When the photodiode is exposed to sufficient energy, a certain number of electrons and a corresponding number of holes are generated. Since the photodiode operates in the reverse bias, the electrons move in the direction of the cathode, and the hole moves in the direction of the anode, so that a photocurrent is generated.
然而,當光電二極體在未照光的時候,亦會因為例如熱能等因素而產生預期之外的電流,此電流一般被稱為光電二極體的漏電流或是暗電流。當上述光電二極體的兩端連接於外部電路時,其照光後所產生的光電流以及未照光時所產生的暗電流均會流過外部電路,因此若是能夠降低光電二極體的暗電流,相對而言便能夠提高光感元件的靈敏度。 However, when the photodiode is not illuminated, an unexpected current is generated due to factors such as thermal energy, which is generally referred to as a leakage current or a dark current of the photodiode. When both ends of the photodiode are connected to an external circuit, the photocurrent generated after the illumination and the dark current generated when the photodiode is not generated may flow through the external circuit, so that the dark current of the photodiode can be reduced. Relatively speaking, the sensitivity of the photosensitive element can be improved.
本發明提供一種感光電路,其可降低光感元件的暗電流,藉以提高光感元件的靈敏度。 The invention provides a photosensitive circuit which can reduce the dark current of the photosensitive element, thereby improving the sensitivity of the photosensitive element.
本發明另提供一種適用於上述感光電路的操作方法。 The present invention further provides an operation method suitable for the above-described photosensitive circuit.
本發明提出的一種感光電路,包括讀取線、掃描線、控制線、電晶體、第一電容、光感元件以及第二電容。所述的讀取線用以提供參考電壓。所述的掃描線用以提供掃描訊號。所述的控制線用以提供控制訊號。所述的電晶體具有控制端、第一端以及第二端。所述電晶體的控制端電耦接於所述的掃描線以接收掃描訊號。所述電晶體的第一端電耦接於所述的讀取線。所述的第一電容具有第一端以及第二端。所述第一電容的第一端電耦接於所述電晶體的第二端。所述第一電容的第二端用以接收操作電壓。所述的光感元件具有第一端以及第二端。所述光感元件的第一端電耦接於所述電晶體的第二端。所述光感元件的第二端用以接收操作電壓。所述的光感元件根據其第一端的電壓準位而操作。所述的第二電容具有第一端以及第二端。所述第二電容的第一端電耦接於所述的控制線以接收控制訊號。所述第二電容的第二端電耦接於所述第一電容的第一端。所述第二電容的電容值大於所述第一電容的電容值。其中所述的第二電容用以根據控制訊號透過所述第二電容的耦合而控制所述光感元件的第一端的電壓準位,藉此降低所述光感元件的漏電流。 A photosensitive circuit according to the present invention includes a read line, a scan line, a control line, a transistor, a first capacitor, a light sensing element, and a second capacitor. The read line is used to provide a reference voltage. The scan line is used to provide a scan signal. The control line is used to provide a control signal. The transistor has a control end, a first end, and a second end. The control end of the transistor is electrically coupled to the scan line to receive a scan signal. The first end of the transistor is electrically coupled to the read line. The first capacitor has a first end and a second end. The first end of the first capacitor is electrically coupled to the second end of the transistor. The second end of the first capacitor is configured to receive an operating voltage. The light sensing element has a first end and a second end. The first end of the light sensing element is electrically coupled to the second end of the transistor. The second end of the light sensing element is configured to receive an operating voltage. The light sensing element operates in accordance with a voltage level of its first end. The second capacitor has a first end and a second end. The first end of the second capacitor is electrically coupled to the control line to receive a control signal. The second end of the second capacitor is electrically coupled to the first end of the first capacitor. The capacitance of the second capacitor is greater than the capacitance of the first capacitor. The second capacitor is configured to control a voltage level of the first end of the photosensitive element according to coupling of the control signal through the second capacitor, thereby reducing leakage current of the photosensitive element.
本發明又提出的一種感光電路操作方法,適用於具有多條掃描線、多條控制線以及多條讀取線之感光電路。掃描線以及條讀取線互相交錯排列多個子感光電路設至於該些掃描線以及該些讀取線之間。每一所述的子感光電路包含電晶體、第一電容、第二電容以及光感元件。所述第一電容的其中一端用以接收操作電壓,所述第一電容的另一端與所 述第二電容的其中一端電性耦接,所述第二電容的另一端電耦接於對應的控制線。所述電晶體的控制端電耦接於對應之掃描線。所述電晶體的第一端電耦接於對應之讀取線。所述電晶體的第二端電耦接於所述光感元件的陰極以及所述第一電容與所述第二電容之耦接點。所述光感元件的陽極用以接收所述的操作電壓。所述的感光電路操作方法包括下列步驟:於第一期間提供具有第一準位之控制訊號至所述的控制線;於第二期間提供具有第二準位之控制訊號至所述的控制線;於第三期間提供所述具有第一準位之控制訊號至對應的控制線,並提供掃描訊號至對應的掃描線以導通對應的電晶體;以及於第四期間提供具有第三準位之控制訊號至對應的控制線。其中,所述的第一準位等於所述的操作電壓,所述的第二準位低於所述的第一準位,所述的第三準位低於所述的第二準位。 The invention further provides a method for operating a photosensitive circuit, which is suitable for a photosensitive circuit having a plurality of scanning lines, a plurality of control lines and a plurality of reading lines. The scan lines and the strip read lines are alternately arranged with a plurality of sub-photosensitive circuits disposed between the scan lines and the read lines. Each of the sub-photosensitive circuits includes a transistor, a first capacitor, a second capacitor, and a light sensing element. One end of the first capacitor is for receiving an operating voltage, and the other end of the first capacitor is One end of the second capacitor is electrically coupled, and the other end of the second capacitor is electrically coupled to a corresponding control line. The control end of the transistor is electrically coupled to a corresponding scan line. The first end of the transistor is electrically coupled to a corresponding read line. The second end of the transistor is electrically coupled to a cathode of the photosensitive element and a coupling point of the first capacitor and the second capacitor. The anode of the photosensitive element is configured to receive the operating voltage. The method for operating a photosensitive circuit includes the steps of: providing a control signal having a first level to the control line during a first period; and providing a control signal having a second level to the control line during a second period Providing the control signal having the first level to the corresponding control line during the third period, and providing the scan signal to the corresponding scan line to turn on the corresponding transistor; and providing the third level during the fourth period Control the signal to the corresponding control line. The first level is equal to the operating voltage, the second level is lower than the first level, and the third level is lower than the second level.
在本發明的一種實施例中,上述之感光電路的電晶體包括第一金屬層、第一絕緣層、主動層、第二金屬層以及第二絕緣層。上述之感光電路的第二電容包括第三金屬層、所述的第一絕緣層以及所述的第二金屬層。上述之感光電路的光感元件包括所述的第二金屬層、感光層以及透明導電層。其中,所述的第一金屬層以及所述的第三金屬層分別形成於基板上。所述的第一絕緣層形成於所述的第一金屬層以及所述的第三金屬層上並包圍及區隔所述的第一金屬層以及所述的第三金屬層。所述的主動層形成於所述的第一絕緣層上並與所述的第一金屬層對應配置。所述的第二金屬層形成於所述的第一絕緣層上並包圍一部分之主動層。所述的感光層形成於所述的第二金屬層上並與所述的第三金屬層對應 配置。所述的透明導電層形成於所述的感光層上。所述的第三導電層用以接收上述之控制訊號。 In an embodiment of the invention, the transistor of the photosensitive circuit includes a first metal layer, a first insulating layer, an active layer, a second metal layer, and a second insulating layer. The second capacitor of the photosensitive circuit described above includes a third metal layer, the first insulating layer, and the second metal layer. The photosensitive element of the above photosensitive circuit comprises the second metal layer, the photosensitive layer and the transparent conductive layer. The first metal layer and the third metal layer are respectively formed on the substrate. The first insulating layer is formed on the first metal layer and the third metal layer and surrounds and partitions the first metal layer and the third metal layer. The active layer is formed on the first insulating layer and disposed corresponding to the first metal layer. The second metal layer is formed on the first insulating layer and surrounds a portion of the active layer. The photosensitive layer is formed on the second metal layer and corresponds to the third metal layer Configuration. The transparent conductive layer is formed on the photosensitive layer. The third conductive layer is configured to receive the control signal.
本發明藉由上述之第二電容的耦合作用以利用一個額外的控制訊號來控制上述之光感元件兩端的電壓差,以在上述之光感元件的非操作期間降低光感元件兩端的電壓差以降低其暗電流。 The present invention utilizes the coupling of the second capacitor described above to control the voltage difference across the photosensitive element by an additional control signal to reduce the voltage difference across the photosensor during non-operation of the photosensor described above. To reduce its dark current.
100、400‧‧‧感光電路 100,400‧‧‧Photosensitive circuit
401‧‧‧子感光電路 401‧‧‧Child Photosensitive Circuit
10、40‧‧‧電晶體 10, 40‧‧‧Optoelectronics
11、41‧‧‧第一電容 11, 41‧‧‧ first capacitor
12、42‧‧‧光感元件 12, 42‧‧‧Light-sensitive components
13、43‧‧‧第二電容 13, 43‧‧‧ second capacitor
Vc1~Vcn‧‧‧控制線 Vc1~Vcn‧‧‧ control line
G1~Gn‧‧‧掃描線 G1~Gn‧‧‧ scan line
R1~Rn‧‧‧讀取線 R1~Rn‧‧‧ reading line
Vbias‧‧‧操作電壓 Vbias‧‧‧ operating voltage
Vref‧‧‧參考電壓 Vref‧‧‧reference voltage
T1‧‧‧第一期間 The first period of T1‧‧
T2‧‧‧第二期間 Second period of T2‧‧
T3‧‧‧第三期間 T3‧‧‧ third period
T4‧‧‧第四期間 Fourth period of T4‧‧
Va‧‧‧第一準位 Va‧‧‧ first position
Vb‧‧‧第二準位 Vb‧‧‧ second position
Vc‧‧‧第三準位 Vc‧‧‧ third position
31‧‧‧第一金屬層 31‧‧‧First metal layer
32‧‧‧第一絕緣層 32‧‧‧First insulation
33‧‧‧主動層 33‧‧‧ active layer
34‧‧‧第二金屬層 34‧‧‧Second metal layer
35‧‧‧第二絕緣層 35‧‧‧Second insulation
36‧‧‧第三金屬層 36‧‧‧ Third metal layer
37‧‧‧感光層 37‧‧‧Photosensitive layer
38‧‧‧透明導電層 38‧‧‧Transparent conductive layer
10-1、11-1、12-1、13-1、40-1、41-1、42-1、43-1‧‧‧第一端 10-1, 11-1, 12-1, 13-1, 40-1, 41-1, 42-1, 43-1‧‧‧ first end
10-2、11-2、12-2、13-2、40-2、41-2、42-2、43-2‧‧‧第二端 10-2, 11-2, 12-2, 13-2, 40-2, 41-2, 42-2, 43-2‧‧‧ second end
10-3、40-3‧‧‧控制端 10-3, 40-3‧‧‧ control terminal
501、502、503、504‧‧‧步驟 501, 502, 503, 504‧ ‧ steps
A、B‧‧‧I-V曲線 A, B‧‧‧I-V curve
X、Y‧‧‧操作點 X, Y‧‧‧ operating points
Reverse‧‧‧反向區 Reverse‧‧‧Reverse zone
V12-1‧‧‧電位 V12-1‧‧‧ potential
Vdiff‧‧‧電位差 Vdiff‧‧‧ potential difference
圖1為本發明一實施例之感光電路的電路圖;圖2為本發明一實施例之感光電路在操作時的時序圖;圖3為一般光感二極體的電流-電壓曲線圖;圖4為本發明一實施例之感光電路的結構示意圖;圖5為本發明另一實施例之感光電路的電路圖;圖6為本發明一實施例之感光電路操作方法的流程圖。 1 is a circuit diagram of a photosensitive circuit according to an embodiment of the present invention; FIG. 2 is a timing chart of a photosensitive circuit according to an embodiment of the present invention; FIG. 3 is a current-voltage graph of a general photodiode; FIG. 5 is a circuit diagram of a photosensitive circuit according to another embodiment of the present invention; and FIG. 6 is a flow chart of a method for operating a photosensitive circuit according to an embodiment of the present invention.
圖1為本發明一實施例之感光電路的電路圖。如圖1所示,感光電路100包括讀取線R1、掃描線G1、控制線Vc1、電晶體10、第一電容11、光感元件12以及第二電容13。讀取線R1用以提供參考電壓。掃描線G1用以提供掃描訊號。控制線Vc1用以提供控制訊號。電晶體10具有第一端10-1、第二端10-2以及控制端10-3。電晶體10的控制端10-3電耦接於掃描線G1以接收掃描訊號。電晶體10的第一端10-1電耦接於讀取線R1。第一電容11具有第一端11-1以及第二端11-2。第一電容11的第一端11-1電耦接於 電晶體10的第二端10-2。第一電容11的第二端11-2用以接收操作電壓Vbias。光感元件12具有第一端12-1以及第二端12-2。光感元件12的第一端12-1電耦接於電晶體10的第二端10-2。光感元件12的第二端12-2用以接收操作電壓Vbias。光感元件12根據其第一端12-1的電壓準位而操作。第二電容13具有第一端13-1以及第二端13-2。第二電容13的第一端13-1電耦接於控制線Vc1以接收控制訊號。第二電容13的第二端13-2電耦接於第一電容11的第一端11-1。第二電容13的電容值大於第一電容11的電容值。第二電容13用以根據控制線Vc1所提供的控制訊號以及透過第二電容13的耦合而控制光感元件12的第一端12-1的電壓準位,藉此降低光感元件12的漏電流。 1 is a circuit diagram of a photosensitive circuit according to an embodiment of the present invention. As shown in FIG. 1, the photosensitive circuit 100 includes a read line R1, a scan line G1, a control line Vc1, a transistor 10, a first capacitor 11, a photosensor element 12, and a second capacitor 13. The read line R1 is used to provide a reference voltage. The scan line G1 is used to provide a scan signal. The control line Vc1 is used to provide a control signal. The transistor 10 has a first end 10-1, a second end 10-2, and a control end 10-3. The control terminal 10-3 of the transistor 10 is electrically coupled to the scan line G1 to receive the scan signal. The first end 10-1 of the transistor 10 is electrically coupled to the read line R1. The first capacitor 11 has a first end 11-1 and a second end 11-2. The first end 11-1 of the first capacitor 11 is electrically coupled to The second end 10-2 of the transistor 10. The second end 11-2 of the first capacitor 11 is for receiving the operating voltage Vbias. The light sensing element 12 has a first end 12-1 and a second end 12-2. The first end 12-1 of the photo-sensitive element 12 is electrically coupled to the second end 10-2 of the transistor 10. The second end 12-2 of the light sensing element 12 is for receiving an operating voltage Vbias. The light sensing element 12 operates in accordance with the voltage level of its first end 12-1. The second capacitor 13 has a first end 13-1 and a second end 13-2. The first end 13-1 of the second capacitor 13 is electrically coupled to the control line Vc1 to receive the control signal. The second end 13-2 of the second capacitor 13 is electrically coupled to the first end 11-1 of the first capacitor 11. The capacitance value of the second capacitor 13 is greater than the capacitance value of the first capacitor 11. The second capacitor 13 is configured to control the voltage level of the first end 12-1 of the photo-sensitive element 12 according to the control signal provided by the control line Vc1 and the coupling through the second capacitor 13, thereby reducing the leakage of the photo-sensitive element 12. Current.
具體而言,控制線Vc1所提供的控制訊號的電壓準位會透過第二電容13而耦合至光感元件12的第一端12-1,因此藉由控制上述之控制訊號的電壓準位,以在光感元件12的操作期間以外的期間縮小光感元件12兩端的電壓差,並降低光感元件12的暗電流。此外,本實施例中的第一電容11可以是光感元件12內建的電容,亦可以是額外製作且並聯於光感元件12的外部電容。 Specifically, the voltage level of the control signal provided by the control line Vc1 is coupled to the first terminal 12-1 of the photosensitive element 12 through the second capacitor 13, so that by controlling the voltage level of the control signal, The voltage difference across the photosensitive element 12 is reduced during periods other than the operation period of the photosensitive element 12, and the dark current of the photosensitive element 12 is lowered. In addition, the first capacitor 11 in this embodiment may be a built-in capacitor of the light sensing element 12, or may be an external capacitor that is additionally fabricated and connected in parallel to the light sensing element 12.
除此之外,在一種實施方式中,由於第二電容13的電容值大於第一電容11的電容值,因此可以在光感元件12在非操作期間(或稱非照光期間)時產生的電子儲存於第二電容13,以使第一電容11兩端的電壓差實質上為零,藉此降低光感元件12的暗電流。在本實施例中,當感光電路100處於不同的操作期間時,控制線Vc1所提供的控制訊號分別具有第一準位Va、第二準位Vb以及第三準位Vc,詳細 的操作方式將搭配圖2所示的時序圖而敘述如下。 In addition, in one embodiment, since the capacitance value of the second capacitor 13 is greater than the capacitance value of the first capacitor 11, the electrons that can be generated during the non-operation period (or during the non-lighting period) of the light sensing element 12 can be The second capacitor 13 is stored such that the voltage difference across the first capacitor 11 is substantially zero, thereby reducing the dark current of the photosensitive element 12. In this embodiment, when the photosensitive circuit 100 is in different operation periods, the control signals provided by the control line Vc1 have a first level Va, a second level Vb, and a third level Vc, respectively. The operation mode will be described below with the timing chart shown in FIG. 2.
圖2為本發明一實施例之感光電路在操作時的時序圖。請參照圖1及圖2,本實施例之感光電路100用以依序操作於第一期間T1、第二期間T2、第三期間T3以及第四期間T4。當操作於第一期間T1時,例如是感光電路100照光的期間,掃描線G1不提供掃描訊號的脈衝而截止電晶體10,控制線Vc1所提供的控制訊號具有第一準位Va,此時因為第二電容13的耦合而將第一準位Va耦合至光感元件12的第一端12-1而使其電位V12-1由操作電壓Vbias提升至參考電壓Vref,而當感光電路100在第一期間T1內受到光照時,光感元件12會感應出電子而使第一端12-1以及第二端12-2之間產生電位差Vdiff,因此第一端12-1的電位V12-1會由操作電壓Vref減去上述電位差Vdiff。 2 is a timing chart of the photosensitive circuit in operation of an embodiment of the present invention. Referring to FIG. 1 and FIG. 2, the photosensitive circuit 100 of the present embodiment is configured to sequentially operate in the first period T1, the second period T2, the third period T3, and the fourth period T4. When operating in the first period T1, for example, during the illumination of the photosensitive circuit 100, the scanning line G1 does not provide a pulse of the scanning signal to turn off the transistor 10. The control signal provided by the control line Vc1 has the first level Va. Because of the coupling of the second capacitor 13, the first level Va is coupled to the first terminal 12-1 of the photosensitive element 12 such that its potential V12-1 is raised from the operating voltage Vbias to the reference voltage Vref, and when the photosensitive circuit 100 is When the first period T1 is illuminated, the photosensitive element 12 induces electrons to generate a potential difference Vdiff between the first end 12-1 and the second end 12-2, so the potential V12-1 of the first end 12-1 The above potential difference Vdiff is subtracted from the operating voltage Vref.
當操作於第二期間T2時,例如是感光電路100經過照光後的非照光期間,掃描線G1仍然不提供掃描訊號的脈衝而截止電晶體10,控制線Vc1所提供的控制訊號具有第二準位Vb,此時因為第二電容13的耦合而將第二準位Vb耦合至光感元件12的第一端12-1而使其電位V12-1實質上會相當於操作電壓Vbias,因此使得光感元件12兩端的電位差Vdiff實質上為0。 When operating in the second period T2, for example, during the non-illumination period after the photosensitive circuit 100 is illuminated, the scanning line G1 still does not provide the pulse of the scanning signal and cuts off the transistor 10. The control signal provided by the control line Vc1 has the second standard. Bit Vb, at this time because of the coupling of the second capacitor 13, the second level Vb is coupled to the first terminal 12-1 of the photosensitive element 12 such that its potential V12-1 substantially corresponds to the operating voltage Vbias, thus The potential difference Vdiff across the photosensor element 12 is substantially zero.
當操作於第三期間T3時,例如是感光電路100的資料讀取期間,掃描線G1提供掃描訊號的脈衝以導通電晶體10,讀取線R1提供參考電壓Vref而使得光感元件12的第一端12-1的電位V12-1實質上為參考電壓Vref,控制線Vc1所提供的控制訊號具有第一準位Va,此時因為第二電容13的耦合而將第一準位Va耦合至光感元件12的第一端 12-1,此時光感元件12-1兩端的電位差Vdiff實質上為操作電壓Vbias減去參考電壓Vref。 When operating in the third period T3, for example, during data reading of the photosensitive circuit 100, the scanning line G1 provides a pulse of the scanning signal to conduct the crystal 10, and the reading line R1 provides the reference voltage Vref such that the photosensitive element 12 The potential V12-1 of the one end 12-1 is substantially the reference voltage Vref, and the control signal provided by the control line Vc1 has the first level Va. At this time, the first level Va is coupled to the second capacitor 13 due to the coupling. First end of light sensing element 12 12-1, at this time, the potential difference Vdiff across the photosensitive element 12-1 is substantially the operating voltage Vbias minus the reference voltage Vref.
當操作於第四期間T4時,例如是感光電路100經過讀取資料後的非照光期間,掃描線G1不提供掃描訊號的脈衝而截止電晶體10,控制線Vc1所提供的控制訊號具有第三準位Vc,此時因為第二電容13的耦合而將第三準位Vc耦合至光感元件12的第一端12-1而使其電位V12-1實質上會相當於操作電壓Vbias,因此使得光感元件12兩端的電位差Vdiff實質上為0。詳細而言,第一準位Va實質上與光感元件12以及第一電容11所接收的操作電壓Vbias相同,第二準位Vb低於第一準位Va,第三準位Vc低於第二準位b。 When operating in the fourth period T4, for example, during the non-illumination period after the photosensitive circuit 100 has read the data, the scanning line G1 does not provide the pulse of the scanning signal to turn off the transistor 10, and the control signal provided by the control line Vc1 has the third. The level Vc, at this time, because the third capacitor 13 is coupled to the first terminal 12-1 of the photosensitive element 12 such that its potential V12-1 substantially corresponds to the operating voltage Vbias, The potential difference Vdiff across the photosensor element 12 is made substantially zero. In detail, the first level Va is substantially the same as the operating voltage Vbias received by the photosensitive element 12 and the first capacitor 11, the second level Vb is lower than the first level Va, and the third level Vc is lower than the first level Vc. Second level b.
承上述,本實施例中的第一期間T1係為照光期間,亦即感光電路100中的光感元件12照光並產生電子的期間,第三期間T3係為資料讀取期間,亦即藉由讀取線R1而讀取上述光感元件12產生之電子的期間,而第二期間T2以及第四期間T4係為感光電路100的未照光期間。本實施例中的操作電壓Vbias的值小於零而使光感元件12操作於逆偏壓模式,且讀取線R1所提供的參考電壓的值大於操作電壓Vbias的值,如此一來,當電晶體10處於導通時,光感元件12的第二端12-2至讀取線R1之間形成通路,此時因照光所產生並累積在第一電容11的第一端11-1上的電子會被藉由讀取線R1而讀取至外部電路(圖未示)。在第二期間T2以及第四期間T4(也就是非照光期間),控制線Vc1分別提供了低於第一準位Va的第二準位Vb以及第三準位Vc。由於光感元件12處於逆偏壓的操作模式,而藉由第二電容13可以將第二準位Vb以及第三準位Vc分別在第二期間T2以及第四 期間T4耦合至光感元件12的第一端12-1,因此可以在非照光期間的時候有效地縮小光感元件12兩端的電壓差,藉此降低光感元件12的暗電流。 In the above, the first period T1 in the present embodiment is a period during illumination, that is, a period in which the photosensitive element 12 in the photosensitive circuit 100 illuminates and generates electrons, and the third period T3 is a data reading period, that is, by The period in which the electrons generated by the photosensor 12 are read by the line R1 is read, and the second period T2 and the fourth period T4 are periods in which the photosensitive circuit 100 is not illuminated. The value of the operating voltage Vbias in this embodiment is less than zero, so that the photosensitive element 12 operates in the reverse bias mode, and the value of the reference voltage provided by the read line R1 is greater than the value of the operating voltage Vbias, so that when When the crystal 10 is turned on, a path is formed between the second end 12-2 of the photosensitive element 12 and the read line R1, and the electrons generated by the illumination and accumulated on the first end 11-1 of the first capacitor 11 at this time. It will be read to an external circuit (not shown) by reading line R1. In the second period T2 and the fourth period T4 (that is, during the non-illumination period), the control line Vc1 respectively provides the second level Vb and the third level Vc which are lower than the first level Va. Since the light sensing element 12 is in the reverse bias mode of operation, the second level 13 and the third level Vc can be in the second period T2 and the fourth by the second capacitor 13 respectively. The period T4 is coupled to the first end 12-1 of the photosensitive element 12, so that the voltage difference across the photo-sensitive element 12 can be effectively reduced during the non-illumination period, thereby reducing the dark current of the photo-sensitive element 12.
舉例而言,光感元件12可以用光感二極體來實現,光感二極體的陽極用以接收操作電壓Vbias,光感二極體的陰極電性耦接於第一電容11的第一端11-1,但本發明的光感元件12並不限於光感二極體,只要是照光後可以產生電流的諸類元件均可以用來實現本發明的光感元件12。圖3為一般光感二極體的電流-電壓曲線圖。如圖3所示,橫軸表示為電壓V而縱軸表示為電流I,當上述實施例中的光感二極體以逆偏壓的方式操作於反向區Reverse的時候,電流-電壓的表現可以參考曲線A,在曲線A的X點所得之電流較Y點所得之電流來得高。具體而言,當上述實施例中的光感二極體操作於照光期間T1以及資料讀取期間T3時,上述實施例藉由控制線Vc1而分別在照光期間T3以及資料讀取期間T4提供第一準位Va的控制訊號而使光感二極體的電流-電壓操作於圖3中的X點以獲得較大的光電流。而當上述實施例中的光感二極體操作於非照光期間T2以及T4時,上述實施例藉由控制線Vc1而分別在兩個非照光期間T2以及T4提供第二準位Vb以及第三準位Vc的控制訊號以使光感二極體的電流-電壓操作於圖3中的Y點而降低暗電流。 For example, the light sensing element 12 can be implemented by a photodiode, the anode of the photodiode is configured to receive the operating voltage Vbias, and the cathode of the photodiode is electrically coupled to the first capacitor 11 One end 11-1, but the photo-sensitive element 12 of the present invention is not limited to the photo-sensitive diode, and any of the elements which can generate a current after illumination can be used to implement the photo-sensitive element 12 of the present invention. FIG. 3 is a current-voltage graph of a general photoreceptor. As shown in FIG. 3, the horizontal axis represents voltage V and the vertical axis represents current I. When the photodiode in the above embodiment operates in reverse bias mode in reverse bias, current-voltage The performance can refer to curve A, and the current obtained at point X of curve A is higher than the current obtained at point Y. Specifically, when the photodiode in the above embodiment is operated in the illumination period T1 and the data reading period T3, the above embodiment provides the first period in the illumination period T3 and the data reading period T4 by the control line Vc1. A control signal of the level Va causes the current-voltage of the photodiode to operate at the X point in FIG. 3 to obtain a larger photocurrent. When the photodiode in the above embodiment operates in the non-illuminating periods T2 and T4, the above embodiment provides the second level Vb and the third in the two non-illuminating periods T2 and T4, respectively, by the control line Vc1. The control signal of the level Vc is such that the current-voltage of the photodiode operates at the point Y in FIG. 3 to reduce the dark current.
雖然上述的實施例中,第一期間T1為光感元件12照光的期間(例如攝影機的快門開啟時間),而第二期間T2與第四期間T4為光感元件12非照光的期間(例如攝影機的快門關閉時間),但本發明並不以此為限。例如當本發明被應用在指紋辨識領域時,由於指紋辨識裝置(圖未示)通常暴露於 環境光下,因此第二期間T2以及第四期間T4也可以是照光期間,在此情況下,光感二極體所產生的光電流及漏電流均會較前一個實施例來得大,因此在反向區Reverse的電流-電壓曲線圖便如圖3中的曲線B所示。此外,此處的照光期間並非光感元件12的操作期間,因此分別藉由具有第二準位Vb以及第三準位Vc的控制訊號在第二期間T2以及T4將光感元件12兩端的電壓差實質上控制為零,而在操作期間(也就是第一期間T1)以及讀取期間(也就是第三期間T3)時提供具有第一準位Va(實質上與光感元件12所接收的操作電壓Vbias相同)的控制訊號以取得較高的光電流。 In the above embodiment, the first period T1 is a period during which the photosensitive element 12 is illuminated (for example, the shutter open time of the camera), and the second period T2 and the fourth period T4 are periods during which the photosensitive element 12 is not illuminated (for example, a camera). Shutter closing time), but the invention is not limited thereto. For example, when the present invention is applied in the field of fingerprint recognition, since the fingerprint identification device (not shown) is usually exposed to In the ambient light, the second period T2 and the fourth period T4 may also be the illumination period. In this case, the photocurrent and the leakage current generated by the photodiode are larger than in the previous embodiment, so The current-voltage graph of the reverse region Reverse is shown as curve B in FIG. In addition, the illumination period here is not the operation period of the photosensitive element 12, so the voltage across the photosensitive element 12 is controlled by the control signal having the second level Vb and the third level Vc in the second period T2 and T4, respectively. The difference is substantially controlled to zero, and is provided with a first level Va during operation (ie, the first period T1) and during the reading period (ie, the third period T3) (substantially received by the photosensitive element 12) The control signal of the same voltage Vbias is used to obtain a higher photocurrent.
圖4為本發明一實施例之感光電路的結構示意圖。請參照圖1以及圖4,感光電路100的電晶體10係由第一金屬層31、第一絕緣層32、主動層33、第二金屬層34以及第二絕緣層35所對應構成。感光電路100的第二電容13係由第三金屬層36、所述的第一絕緣層32以及所述的第二金屬層34所對應構成。感光電路100的光感元件12以及第一電容11係由所述的第二金屬層34、感光層37以及透明導電層38所對應構成。其中,所述的第一金屬層31以及所述的第三金屬層36分別形成於基板39上。所述的第一絕緣層32形成於所述的第一金屬層31以及所述的第三金屬層36上並包圍及區隔所述的第一金屬層31以及所述的第三金屬層36。所述的主動層33形成於所述的第一絕緣層32上並與所述的第一金屬層31對應配置。所述的第二金屬層34形成於所述的第一絕緣層32上並包圍一部分之主動層33。所述的感光層37形成於所述的第二金屬層34上並與所述的第三金屬層36對應配置。所述的透明導電層38形成於所述的感光 層37上。所述的第三導電層36用以接收控制線Vc1所提供的控制訊號。除此之外,第一金屬層31以及第三金屬層36係為共同成長於基板39上的金屬層,在此金屬層成長完畢後,再經過蝕刻而使此金屬層成為互相分離的第一金屬層31以及第三金屬層36,而成長以及蝕刻的細節屬於半導體製程技術的範疇,因此不再贅述。 4 is a schematic structural view of a photosensitive circuit according to an embodiment of the present invention. Referring to FIGS. 1 and 4 , the transistor 10 of the photosensitive circuit 100 is configured by a first metal layer 31 , a first insulating layer 32 , an active layer 33 , a second metal layer 34 , and a second insulating layer 35 . The second capacitor 13 of the photosensitive circuit 100 is configured by the third metal layer 36, the first insulating layer 32, and the second metal layer 34. The photosensitive element 12 and the first capacitor 11 of the photosensitive circuit 100 are configured by the second metal layer 34, the photosensitive layer 37, and the transparent conductive layer 38. The first metal layer 31 and the third metal layer 36 are respectively formed on the substrate 39. The first insulating layer 32 is formed on the first metal layer 31 and the third metal layer 36 and surrounds and partitions the first metal layer 31 and the third metal layer 36. . The active layer 33 is formed on the first insulating layer 32 and disposed corresponding to the first metal layer 31. The second metal layer 34 is formed on the first insulating layer 32 and surrounds a portion of the active layer 33. The photosensitive layer 37 is formed on the second metal layer 34 and disposed corresponding to the third metal layer 36. The transparent conductive layer 38 is formed on the photosensitive layer On layer 37. The third conductive layer 36 is configured to receive the control signal provided by the control line Vc1. In addition, the first metal layer 31 and the third metal layer 36 are metal layers that are commonly grown on the substrate 39. After the metal layer is grown, the metal layer is etched to make the metal layer separate from each other. The metal layer 31 and the third metal layer 36, while the details of growth and etching are within the scope of semiconductor process technology, and therefore will not be described again.
圖5為本發明另一實施例之感光電路的電路圖。圖5所示的感光電路400包含多個子感光電路401,而每個子感光電路401的電路結構與圖1中的感光電路100相同。如圖5所示,感光電路400具有多條掃描線G1~Gn、多條控制線Vc1~Vcn以及多條讀取線R1~Rn。掃描線G1~Gn以及讀取線R1~Rn互相交錯排列而形成多個子感光電路401。每一子感光電路401包含電晶體40、第一電容41、光感元件42以及第二電容43。第一電容41的其中一端41-2用以接收操作電壓Vbias,第一電容41的另一端41-1與第二電容43的其中一端43-2電性耦接,第二電容43的另一端43-1電耦接於對應的控制線。電晶體40的控制端40-3電耦接於對應之掃描線,電晶體40的第一端40-1電耦接於對應之讀取線,電晶體40的第二端40-2電耦接於光感元件42的陰極42-1以及第一電容41與第二電容43之耦接點,光感元件42的陽極42-2用以接收操作電壓Vbias。 Fig. 5 is a circuit diagram of a photosensitive circuit according to another embodiment of the present invention. The photosensitive circuit 400 shown in FIG. 5 includes a plurality of sub-photosensitive circuits 401, and the circuit configuration of each sub-photosensitive circuit 401 is the same as that of the photosensitive circuit 100 of FIG. As shown in FIG. 5, the photosensitive circuit 400 has a plurality of scanning lines G1 to Gn, a plurality of control lines Vc1 to Vcn, and a plurality of reading lines R1 to Rn. The scanning lines G1 to Gn and the reading lines R1 to Rn are alternately arranged to form a plurality of sub-photosensitive circuits 401. Each sub-photosensitive circuit 401 includes a transistor 40, a first capacitor 41, a photo-sensitive element 42, and a second capacitor 43. One end of the first capacitor 41 is used to receive the operating voltage Vbias, and the other end 41-1 of the first capacitor 41 is electrically coupled to one end 43-2 of the second capacitor 43. The other end of the second capacitor 43 is electrically coupled. 43-1 is electrically coupled to the corresponding control line. The control terminal 40-3 of the transistor 40 is electrically coupled to the corresponding scan line. The first end 40-1 of the transistor 40 is electrically coupled to the corresponding read line, and the second end 40-2 of the transistor 40 is electrically coupled. Connected to the cathode 42-1 of the photosensitive element 42 and the coupling point of the first capacitor 41 and the second capacitor 43, the anode 42-2 of the photosensitive element 42 is used to receive the operating voltage Vbias.
在前面所敘述的圖1之感光電路100的操作方式可以歸納出一個操作方法,此操作方法包含多個操作步驟,且此操作方法亦適用於圖5之感光電路400,因此下面將以感光電路400來配合說明上述之操作方法的多個步驟。圖6為本發明一實施例之感光電路操作方法的流程圖。如圖 6所示,感光電路操作方法包括步驟501~504。 The operation mode of the photosensitive circuit 100 of FIG. 1 described above can be summarized as an operation method. The operation method includes a plurality of operation steps, and the operation method is also applicable to the photosensitive circuit 400 of FIG. 5, so that the photosensitive circuit will be used below. 400 is used in conjunction with the various steps of the above described method of operation. FIG. 6 is a flow chart of a method for operating a photosensitive circuit according to an embodiment of the present invention. As shown As shown in FIG. 6, the photosensitive circuit operating method includes steps 501 to 504.
請參照圖2所示的時序圖來閱讀圖6所示流程圖中的各個步驟501~504。步驟501:於第一期間T1提供第一準位Va之控制訊號至該些控制線。步驟502:於第二期間T2提供第二準位Vb之控制訊號至該些控制線。步驟503:於第三期間T3提供第一準位Va之控制訊號至對應的控制線,並提供一掃描訊號至對應的掃描線以導通對應的電晶體。步驟504:於第四期間T4提供第三準位Vc之控制訊號至對應的控制線。在上述的操作步驟中,第一準位Va實質上等於操作電壓Vbias,第二準位Vb低於第一準位Va,第三準位Vc低於第二準位Vb,且掃描訊號的脈衝係依序被提供至掃描線G1~Gn以導通電晶體40並藉由對應的讀取線R1~Rn讀取對應的光感元件42所產生之資料電位,且當電晶體40被截止時,對應的子感光電路401即操作於第四期間T4。 Please refer to the timing diagram shown in FIG. 2 to read the steps 501-504 in the flowchart shown in FIG. 6. Step 501: The control signal of the first level Va is provided to the control lines during the first period T1. Step 502: Provide a control signal of the second level Vb to the control lines during the second period T2. Step 503: The control signal of the first level Va is provided to the corresponding control line during the third period T3, and a scan signal is provided to the corresponding scan line to turn on the corresponding transistor. Step 504: The control signal of the third level Vc is provided to the corresponding control line in the fourth period T4. In the above operation steps, the first level Va is substantially equal to the operating voltage Vbias, the second level Vb is lower than the first level Va, the third level Vc is lower than the second level Vb, and the pulse of the scanning signal And sequentially supplied to the scan lines G1 G Gn to conduct the crystal 40 and read the data potential generated by the corresponding photo sensing element 42 by the corresponding read lines R1 R Rn, and when the transistor 40 is turned off, The corresponding sub-photosensitive circuit 401 operates in the fourth period T4.
請參照圖5,以子感光電路401來舉例說明,控制線Vc2所提供的第二準位Vb的大小必須適當,才能夠使子感光電路400由照光期間進入非操作期間時,將光感元件24的第一端42-1的電位控制為實質上等於操作電壓Vbias,以減少子感光電路401在非操作期間時的暗電流。除此之外,假設在照光期間時,電容41所儲存的電荷量為Q1,電容43所儲存的電荷量為Q2,而在非操作期間時,電容41所儲存的電荷量為Q1’,電容43所儲存的電荷量為Q2’,為了使電容41以及電容43所儲存的電容之和在由照光期間進入非操作期間時相等,必須滿足算式:Q1+Q2=Q1’+Q2’......(1) 依據電荷公式:Q=CV可以將算式(1)寫成:Cd×(Vref-Vdiff-Vbias)+Cc×(Vref-Vdiff-Vbias)=Cd×(Vbias-Vbias)+Cc×(Vbias-Vb)......(2)算式(2)經過化簡後可以得到下式:Vb=2Vbias-Vref+Vdiff+(Vbias-Vref+Vdiff)×(Cd÷Cc)......(3)其中,算式(3)中的Vb為第二準位的值,Vbias為操作電壓的值,Vref為參考電壓的值,Vdiff為光感元件42照光後兩端42-1、42-2所產生的電位差值,Cd為第一電容41之電容值,Cc為第二電容43之電容值。其中,第二電容43之電容值Cc大於第一電容41之電容值Cd。當第二電容43的電容值Cc遠大於第一電容41的電容值Cd時,項次(Vbias-Vref+Vdiff)×(Cd÷Cc)的值近似於零因此可以被忽略不計。經過上述的計算之後所得到的第二準位Vb,能夠使子感光電路400在由照光期間進入非照光期間時,將光感元件42的第一端42-1的電位控制為實質上等於操作電壓Vbias,以減少子感光電路401在非操作期間時的暗電流。 Referring to FIG. 5, the sub-photosensitive circuit 401 exemplifies that the size of the second level Vb provided by the control line Vc2 must be appropriate to enable the sub-photosensitive circuit 400 to enter the non-operation period during the illumination period. The potential of the first end 42-1 of 24 is controlled to be substantially equal to the operating voltage Vbias to reduce the dark current of the sub-photosensitive circuit 401 during non-operational periods. In addition, it is assumed that during the illumination period, the amount of charge stored in the capacitor 41 is Q1, the amount of charge stored in the capacitor 43 is Q2, and during the non-operation period, the amount of charge stored in the capacitor 41 is Q1', the capacitance The amount of charge stored in 43 is Q2'. In order to make the sum of the capacitances stored in the capacitor 41 and the capacitor 43 equal during the non-operation period during illumination, the equation must be satisfied: Q1+Q2=Q1'+Q2'... ...(1) According to the charge formula: Q=CV, the formula (1) can be written as: Cd × (Vref - Vdiff - Vbias) + Cc × (Vref - Vdiff - Vbias) = Cd × (Vbias - Vbias) + Cc × (Vbias - Vb) (2) After the simplification of the formula (2), the following equation can be obtained: Vb=2Vbias-Vref+Vdiff+(Vbias-Vref+Vdiff)×(Cd÷Cc)......(3) Wherein, Vb in the formula (3) is the value of the second level, Vbias is the value of the operating voltage, Vref is the value of the reference voltage, and Vdiff is the both ends 42-1, 42-2 of the photosensitive element 42 after illumination The potential difference generated, Cd is the capacitance value of the first capacitor 41, and Cc is the capacitance value of the second capacitor 43. The capacitance value Cc of the second capacitor 43 is greater than the capacitance value Cd of the first capacitor 41. When the capacitance value Cc of the second capacitor 43 is much larger than the capacitance value Cd of the first capacitor 41, the value of the term (Vbias - Vref + Vdiff) × (Cd ÷ Cc) is approximately zero and thus can be ignored. The second level Vb obtained after the above calculation enables the sub-photosensitive circuit 400 to control the potential of the first end 42-1 of the photosensitive element 42 to be substantially equal to the operation when entering the non-illumination period during illumination. The voltage Vbias is used to reduce the dark current of the sub-photosensitive circuit 401 during non-operational periods.
請繼續參照圖5,仍然以子感光電路401來舉例說明,控制線Vc2所提供的第三準位Vc的大小必須適當,才能夠使子感光電路400由讀取期間進入非操作期間時,將光感元件24的第一端42-1的電位控制為實質上等於操作電壓Vbias,以減少子感光電路在非操作期間時的暗電流。除此之外,假設在讀取期間時,電容41所儲存的電荷量為Q3,電容43所儲存的電荷量為Q4,而在非操作期間時,電容41所儲存的電荷量為Q3’,電容43所儲存的電荷量為Q4’,為了使電容41以及電容43所儲存的電容之和在由讀取期間進 入非操作期間時相等,必須滿足算式:Q3+Q4=Q3’+Q4’......(4)依據電荷公式:Q=CV可以將算式(4)寫成:Cd×(Vref-Vbias)+Cc×(Vreff-Vbias)=Cd×(Vbias-Vbias)+Cc×(Vbias-Vc)......(5)算式(5)經過化簡後可以得到下式:Vc=2Vbias-Vref+(Vbias-Vref)×(Cd÷Cc)...(6)其中,算式(6)中的Vc為第三準位的值,Vbias為操作電壓的值,Vref為參考電壓的值,Cd為第一電容41之電容值,Cc為第二電容43之電容值,其中,第二電容43之電容值大於第一電容41之電容值。當第二電容43的電容值Cc遠大於第一電容41的電容值Cd時,項次(Vbias-Vref)×(Cd÷Cc)的值近似於零因此可以被忽略不計。經過上述的計算之後所得到的第三準位Vc,能夠使子感光電路400在由讀取期間進入非操作期間時,將光感元件42的第一端42-1的電位控制為實質上等於操作電壓Vbias,以減少子感光電路401在非操作期間時的暗電流。 With continued reference to FIG. 5, the sub-photosensitive circuit 401 is still used as an example. The third level Vc provided by the control line Vc2 must be appropriate to enable the sub-photosensitive circuit 400 to enter the non-operation period from the reading period. The potential of the first end 42-1 of the photo-sensitive element 24 is controlled to be substantially equal to the operating voltage Vbias to reduce the dark current of the sub-photosensitive circuit during non-operational periods. In addition, it is assumed that during the reading period, the amount of charge stored in the capacitor 41 is Q3, the amount of charge stored in the capacitor 43 is Q4, and in the non-operation period, the amount of charge stored in the capacitor 41 is Q3', The amount of charge stored in the capacitor 43 is Q4', in order to make the sum of the capacitance stored in the capacitor 41 and the capacitor 43 during reading When entering the non-operational period, it must be equal to the formula: Q3+Q4=Q3'+Q4'...(4) According to the charge formula: Q=CV, the formula (4) can be written as: Cd×(Vref-Vbias ) + Cc × (Vreff - Vbias) = Cd × (Vbias - Vbias) + Cc × (Vbias - Vc) (5) The equation (5) can be simplified to obtain the following formula: Vc = 2Vbias -Vref+(Vbias-Vref)×(Cd÷Cc) (6) where Vc in equation (6) is the value of the third level, Vbias is the value of the operating voltage, and Vref is the value of the reference voltage. Cd is the capacitance value of the first capacitor 41, and Cc is the capacitance value of the second capacitor 43, wherein the capacitance value of the second capacitor 43 is greater than the capacitance value of the first capacitor 41. When the capacitance value Cc of the second capacitor 43 is much larger than the capacitance value Cd of the first capacitor 41, the value of the term (Vbias-Vref) × (Cd ÷ Cc) is approximately zero and thus can be ignored. The third level Vc obtained after the above calculation enables the sub-photosensitive circuit 400 to control the potential of the first end 42-1 of the photosensitive element 42 to be substantially equal to the non-operation period during reading. The voltage Vbias is operated to reduce the dark current of the sub-photosensitive circuit 401 during non-operational periods.
綜上所述,本發明實施例藉由第二電容的耦合作用來控制光感元件兩端的電壓差,當光感元件操作於非操作期間(或稱非照光期間)的時候,第二電容將具有低於光感元件操作電壓的控制訊號的準位耦合至光感元件的陰極,藉此縮小光感元件的暗電流,而當光感元件操作於操作期間(或稱照光期間)以及讀取期間的時候,第二電容將實質上與光感元件操作電壓實質上相同的控制訊號耦合至光感元件的陰極,因此使得光感元件能夠正常的產生光電流。由於本發明能夠使暗電流下降且光電流不變,因此可以提升光感元件對 光的靈敏度。 In summary, the embodiment of the present invention controls the voltage difference across the photosensitive element by the coupling of the second capacitor. When the photosensitive element is operated during non-operation (or during non-illumination), the second capacitor will A level having a control signal lower than an operating voltage of the photosensitive element is coupled to the cathode of the photosensitive element, thereby reducing the dark current of the photosensitive element, while the photosensitive element is operating during operation (or during illumination) and reading During the period, the second capacitor couples the control signal substantially identical to the operating voltage of the photosensitive element to the cathode of the photosensitive element, thereby enabling the photosensitive element to normally generate photocurrent. Since the present invention can reduce the dark current and the photocurrent does not change, the light sensing element pair can be improved. The sensitivity of light.
雖然本發明已以上述的數個實施例揭露,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 The present invention has been disclosed in the above-described embodiments, and it is not intended to limit the present invention. Any one skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
100‧‧‧感光電路 100‧‧‧Photosensitive circuit
10‧‧‧電晶體 10‧‧‧Optoelectronics
11‧‧‧第一電容 11‧‧‧First capacitor
12‧‧‧光感元件 12‧‧‧Light sensing components
13‧‧‧第二電容 13‧‧‧second capacitor
Vc1‧‧‧控制線 Vc1‧‧‧ control line
G1‧‧‧掃描線 G1‧‧‧ scan line
R1‧‧‧讀取線 R1‧‧‧ reading line
Vbias‧‧‧操作電壓 Vbias‧‧‧ operating voltage
10-1、11-1、12-1、13-1‧‧‧第一端 10-1, 11-1, 12-1, 13-1‧‧‧ first end
10-2、11-2、12-2、13-2‧‧‧第二端 10-2, 11-2, 12-2, 13-2‧‧‧ second end
10-3‧‧‧控制端 10-3‧‧‧Control terminal
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104116336A TWI579752B (en) | 2015-05-21 | 2015-05-21 | Photo-sensing circuit and operation method thereof |
CN201510438067.8A CN105071797B (en) | 2015-05-21 | 2015-07-23 | Photosensitive circuit and operation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104116336A TWI579752B (en) | 2015-05-21 | 2015-05-21 | Photo-sensing circuit and operation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201642106A true TW201642106A (en) | 2016-12-01 |
TWI579752B TWI579752B (en) | 2017-04-21 |
Family
ID=54501102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104116336A TWI579752B (en) | 2015-05-21 | 2015-05-21 | Photo-sensing circuit and operation method thereof |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN105071797B (en) |
TW (1) | TWI579752B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI718378B (en) * | 2018-05-23 | 2021-02-11 | 友達光電股份有限公司 | Optical detection device and detection method thereof |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111007715A (en) * | 2019-12-18 | 2020-04-14 | 汉腾汽车有限公司 | Autonomous lane changing method and system based on vehicle position and course |
CN114187870B (en) | 2020-09-14 | 2023-05-09 | 京东方科技集团股份有限公司 | Photoelectric detection circuit, driving method thereof, display device and manufacturing method thereof |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7075130B2 (en) * | 2002-09-19 | 2006-07-11 | Eidgenossische Technische Hochschule Zurich | Photosensitive device with low power consumption |
KR101321996B1 (en) * | 2008-04-25 | 2013-10-25 | 엘지디스플레이 주식회사 | Liquid Crystal Display Device And Method For Driving Thereof |
KR20100099004A (en) * | 2009-03-02 | 2010-09-10 | 삼성모바일디스플레이주식회사 | Light sensing circuit, controlling method of the same, and touch panel comrprising the light sensing circuit |
TWI421751B (en) * | 2009-08-25 | 2014-01-01 | Au Optronics Corp | Touch device, display substrate, liquid crystal display and operation method for photo sensor |
CN101655644B (en) * | 2009-09-04 | 2011-02-09 | 友达光电股份有限公司 | Substrate with touch control function, liquid crystal display and operation method for driving substrate |
KR101727469B1 (en) * | 2009-11-06 | 2017-04-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device |
TWI470509B (en) * | 2011-09-08 | 2015-01-21 | Hannstar Display Corp | Optical touch display panel and touch sensing method thereof |
TWI448950B (en) * | 2011-10-20 | 2014-08-11 | Au Optronics Corp | Self-adjusting photosensing touch circuit and display thereof |
US8723095B2 (en) * | 2012-02-16 | 2014-05-13 | Aptina Imaging Corporation | Method and apparatus for ambient light detection including plural image pixels and at least one dark pixel |
-
2015
- 2015-05-21 TW TW104116336A patent/TWI579752B/en not_active IP Right Cessation
- 2015-07-23 CN CN201510438067.8A patent/CN105071797B/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI718378B (en) * | 2018-05-23 | 2021-02-11 | 友達光電股份有限公司 | Optical detection device and detection method thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI579752B (en) | 2017-04-21 |
CN105071797A (en) | 2015-11-18 |
CN105071797B (en) | 2018-03-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11085817B2 (en) | Device and method for detecting light intensity, and display device | |
US8227740B2 (en) | Photo detector device without a storage capacitor and configured for display device | |
WO2018214617A1 (en) | Pixel circuit, and display panel and driving method thereof | |
CN103353814B (en) | A kind of touch drive circuit, optical profile type in-cell touch panel and display device | |
CN107204173B (en) | A kind of pixel circuit and its driving method, display panel | |
CN107480650B (en) | Fingerprint detection unit, fingerprint detection circuit, driving method of fingerprint detection circuit and display device | |
TWI579752B (en) | Photo-sensing circuit and operation method thereof | |
US20120176356A1 (en) | Display device | |
CN111312161B (en) | Pixel driving circuit and display panel | |
CN109935183A (en) | Array substrate, correlated current detection method, display panel and display device | |
US20120268439A1 (en) | Display Device | |
WO2018133404A1 (en) | Pixel circuit, driving method therefor, and display device | |
CN112532899B (en) | Photoelectric conversion circuit, driving method, photoelectric detection substrate, and photoelectric detection device | |
CN113990906A (en) | Display substrate, grain identification method thereof and display device | |
US8835829B2 (en) | Image sensor formed by silicon rich oxide material | |
CN110782820B (en) | Optical sensing circuit, pixel driving method and display panel | |
US20120262424A1 (en) | Display Device | |
JP2012118519A (en) | Input/output device and method for driving input/output device | |
CN203366295U (en) | Touch control drive circuit, optical type in-cell touch panel and display device | |
TWI771075B (en) | Light sensing pixel and display device with light sensing function | |
CN115641805A (en) | Display substrate, brightness compensation method thereof and display device | |
US11676415B2 (en) | Sensing device capable of improving sensing effect thereof | |
CN108398243B (en) | Display panel, detection method thereof and display device | |
CN114842795B (en) | Pixel driving device | |
CN114038384B (en) | Display panel and display device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |