TW201636588A - Laser beam inspection method - Google Patents
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- TW201636588A TW201636588A TW104141530A TW104141530A TW201636588A TW 201636588 A TW201636588 A TW 201636588A TW 104141530 A TW104141530 A TW 104141530A TW 104141530 A TW104141530 A TW 104141530A TW 201636588 A TW201636588 A TW 201636588A
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract
Description
本發明係關於在將晶圓等進行加工時所使用之雷射光線之檢查方法。 The present invention relates to a method of inspecting laser light used in processing a wafer or the like.
為了將在表面側形成有IC等元件的晶圓分割成複數晶片，使雷射光線聚光在晶圓的內部而形成成為分割起點的改質層的加工方法已被實用化(參照例如專利文獻1)。在該加工方法中，係以吸盤平台保持晶圓的表面側，且由露出的背面側，將難以被晶圓吸收的波長的雷射光線以在內部聚光的方式進行照射。 In order to divide a wafer in which an element such as an IC is formed on the surface side into a plurality of wafers, a processing method in which laser light is condensed inside the wafer to form a reforming layer which is a starting point of division has been put into practical use (refer to, for example, the patent document) 1). In this processing method, the surface of the wafer is held by the chuck platform, and the laser light of a wavelength that is hard to be absorbed by the wafer is irradiated with the inside by the exposed back side.
但是，若以上述加工方法在晶圓形成改質層，因達至晶圓的表面側的雷射光線的漏洩光，元件係有受到損傷之虞。因此，近年來，為抑制因該漏洩光所致之元件損傷，使用十分短的脈衝寬度的雷射光線來抑制漏洩光的發生的加工方法已被提出(參照例如專利文獻2)。 However, if the reforming layer is formed on the wafer by the above-described processing method, the component is damaged due to leakage of the laser light on the surface side of the wafer. Therefore, in recent years, in order to suppress the damage of the element due to the leaked light, a processing method for suppressing the occurrence of the leaked light by using a laser beam having a very short pulse width has been proposed (see, for example, Patent Document 2).
[專利文獻1]日本特開2002-192370號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-192370
[專利文獻2]日本特開2014-104484號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2014-104484
上述因漏洩光所致之元件的損傷，被認為被照射至晶圓的雷射光線的調整不足或加工條件的不適合等為其原因。例如考慮以在與傳播方向呈垂直的面內，強度分布成為對稱的方式適當調整雷射光線，或者若可適合加工條件，可更加減低因漏洩光所致之元件的損傷。 The above-described damage of the element due to leakage of light is considered to be due to insufficient adjustment of the laser beam irradiated onto the wafer or unsuitability of processing conditions. For example, it is considered that the laser beam is appropriately adjusted in such a manner that the intensity distribution becomes symmetrical in a plane perpendicular to the propagation direction, or if the processing conditions are suitable, the damage of the element due to leakage light can be further reduced.
但是，在使用難以被晶圓吸收的波長的雷射光線的原理上，係難以以目視調整雷射光線而使其適合加工條件。雖然可根據實際上發生的元件的不良來檢查、調整雷射光線的照射區域，但是以該方法，在檢查所需時間及成本方面會有問題。 However, on the principle of using a laser beam of a wavelength that is difficult to be absorbed by the wafer, it is difficult to visually adjust the laser beam to suit the processing conditions. Although the irradiation area of the laser light can be inspected and adjusted according to the defect of the element actually occurring, in this method, there is a problem in the time and cost required for the inspection.
本發明係鑑於該問題而完成者，其目的在提供可短時間且低成本檢查雷射光線的狀態之雷射光線之檢查方法。 The present invention has been made in view of the above problems, and an object thereof is to provide a method of inspecting a laser beam which can detect a state of laser light in a short time and at low cost.
藉由本發明，提供一種雷射光線之檢查方法，其特徵為：包含：檢查用膜配設步驟，其係在具有第1面、及該第1面的相反側的第2面的檢查用板狀物的該第1面，形成吸收透過該檢查用板狀物的波長的雷射光線 而熔融的檢查用膜；改質層形成步驟，其係在實施該檢查用膜配設步驟之後，使該檢查用膜與吸盤平台的保持面相對面而以該吸盤平台保持該檢查用板狀物，且將該雷射光線由該第2面側以在該檢查用板狀物的內部聚光的方式進行照射而形成改質層；及檢查步驟，其係在實施該改質層形成步驟之後，根據藉由通過該檢查用板狀物的該雷射光線而在該檢查用膜形成的熔融痕跡，檢查該雷射光線的狀態。 According to the present invention, there is provided a method of inspecting a laser beam, comprising: an inspection film arrangement step of the inspection sheet having a first surface and a second surface opposite to the first surface The first surface of the object forms a laser beam that absorbs the wavelength of the plate for inspection a molten inspection film; a reforming layer forming step of holding the inspection plate with the inspection film and the holding surface of the suction cup platform, and holding the inspection plate with the suction plate platform And irradiating the laser beam to the second surface side to condense the inside of the inspection plate to form a modified layer; and an inspection step after performing the reforming layer forming step The state of the laser beam is inspected based on the molten trace formed on the inspection film by the laser beam passing through the inspection plate.
在本發明中，較佳為在該檢查步驟中，若相對形成在該改質層的正下方的改質層正下方熔融痕跡，形成在該改質層正下方熔融痕跡的近傍的斑點狀熔融痕跡呈偏向時，即判定相對照射該雷射光線的雷射光線照射手段的光學單元或透鏡的光軸，該雷射光線呈偏移。 In the present invention, it is preferable that in the inspection step, if a trace is melted directly under the reforming layer directly under the reforming layer, a speckle-like melting of the near crucible which forms a melting trace directly under the reforming layer is formed. When the trace is deflected, that is, the optical axis of the optical unit or lens that is opposite to the laser beam irradiation means for irradiating the laser beam is determined, the laser beam is shifted.
在本發明之雷射光線之檢查方法中，由於在檢查用板狀物的第1面形成吸收雷射光線而熔融的檢查用膜，因此藉由由第2面側被照射且通過檢查用板狀物的雷射光線，在檢查用膜形成熔融痕跡。因此，可根據該熔融痕跡來檢查雷射光線的狀態。 In the inspection method of the laser beam of the present invention, the inspection film which is melted by the absorption of the laser beam is formed on the first surface of the inspection plate member, and is irradiated by the second surface side and passes through the inspection plate. The laser light of the object forms a melting trace on the film for inspection. Therefore, the state of the laser light can be checked based on the trace of the melt.
亦即，在本發明之雷射光線之檢查方法中，係僅在檢查用板狀物的第1面形成檢查用膜，可根據熔融痕跡而以目視確認通過檢查用板狀物的雷射光線的照射位置，因此可短時間且低成本檢查雷射光線的狀態。 In the method of inspecting the laser beam of the present invention, the film for inspection is formed only on the first surface of the plate for inspection, and the laser beam passing through the plate for inspection can be visually confirmed based on the trace of the melt. The position of the illumination, so that the state of the laser light can be checked in a short time and at low cost.
2‧‧‧雷射加工裝置 2‧‧‧ Laser processing equipment
4‧‧‧吸盤平台 4‧‧‧Sucker platform
4a‧‧‧保持面 4a‧‧‧ Keep face
6‧‧‧夾具 6‧‧‧Clamp
8、12‧‧‧雷射加工單元(雷射光線照射手段) 8, 12 ‧ ‧ laser processing unit (laser light irradiation means)
11‧‧‧檢查用板狀物 11‧‧‧Check plate
11a‧‧‧第1面 11a‧‧‧1st
11b‧‧‧第2面 11b‧‧‧2nd
13‧‧‧檢查用膜 13‧‧‧Inspection film
14‧‧‧雷射振盪器 14‧‧‧Laser oscillator
15‧‧‧保護構件 15‧‧‧Protection components
16‧‧‧稜鏡 16‧‧‧稜鏡
16a‧‧‧第1反射面 16a‧‧‧1st reflecting surface
16b‧‧‧第2反射面 16b‧‧‧2nd reflecting surface
17‧‧‧框架 17‧‧‧Frame
18‧‧‧空間光調變器 18‧‧‧Space light modulator
19‧‧‧改質層 19‧‧‧Modified layer
20‧‧‧驅動裝置 20‧‧‧ drive
21‧‧‧熔融痕跡 21‧‧‧ melting traces
21a‧‧‧熔融痕跡(改質層正下方熔融痕跡) 21a‧‧‧ Traces of melting (melting traces directly below the modified layer)
21b‧‧‧熔融痕跡(斑點狀熔融痕跡) 21b‧‧‧ melting traces (spotted melting traces)
22‧‧‧控制裝置 22‧‧‧Control device
24、26‧‧‧透鏡 24, 26‧ ‧ lens
28‧‧‧反射鏡 28‧‧‧Mirror
30‧‧‧接物鏡 30‧‧‧With objective lens
L、L1、L2‧‧‧雷射光線 L, L1, L2‧‧‧ laser light
[圖1]圖1(A)係以模式顯示檢查用膜配設步驟的斜視圖，圖1(B)係以模式顯示在檢查用板狀物貼附保護構件的樣子的斜視圖。 Fig. 1(A) is a perspective view showing a step of arranging a film for inspection in a mode, and Fig. 1(B) is a perspective view showing a state in which a protective member is attached to a plate for inspection in a mode.
[圖2]圖2(A)係以模式顯示改質層形成步驟的部分剖面側面圖，圖2(B)係將圖2(A)的一部分放大的放大圖。 Fig. 2 (A) is a partial cross-sectional side view showing a step of forming a modified layer in a mode, and Fig. 2 (B) is an enlarged view showing a part of Fig. 2 (A) in an enlarged manner.
[圖3]圖3(A)係以模式顯示相對雷射加工單元的光軸，雷射光線以-Y方向偏移時之熔融痕跡之例的平面圖，圖3(B)係以模式顯示相對雷射加工單元的光軸，雷射光線未偏移時之熔融痕跡之例的平面圖，圖3(C)係以模式顯示相對雷射加工單元的光軸，雷射光線以+Y方向偏移時之熔融痕跡之例的平面圖。 [Fig. 3] Fig. 3(A) is a plan view showing, in a mode, an example of a melting trace when the laser beam is shifted in the -Y direction with respect to the optical axis of the laser processing unit, and Fig. 3(B) shows the relative pattern in the mode. A plan view of an optical axis of a laser processing unit, an example of a melting trace when the laser beam is not shifted, and FIG. 3(C) shows a mode in which the laser beam is shifted in the +Y direction with respect to the optical axis of the laser processing unit. A plan view of an example of a melting trace of time.
[圖4]係以模式顯示有關變形例之加工單元之構成例的圖。 Fig. 4 is a view showing a configuration example of a processing unit according to a modification in a mode.
參照所附圖示，說明本發明之實施形態。本實施形態之雷射光線之檢查方法係包含：檢查用膜配設步驟(參照圖1(A))、改質層形成步驟(參照圖2(A)及圖2(B))、及檢查步驟(參照圖3(A)、圖3(B)、及圖3(C))。 Embodiments of the present invention will be described with reference to the accompanying drawings. The inspection method of the laser beam according to the present embodiment includes a film arrangement step for inspection (see FIG. 1(A)), a reforming layer forming step (see FIGS. 2(A) and 2(B)), and inspection. Step (refer to FIG. 3 (A), FIG. 3 (B), and FIG. 3 (C)).
在檢查用膜配設步驟中，係在檢查用板狀物的第1面形成吸收雷射光線而熔融的檢查用膜。在改質層 形成步驟中，係將雷射光線由檢查用板狀物的第2面側以在檢查用板狀物的內部聚光的方式照射，在檢查用板狀物的內部形成改質層。 In the film arrangement step for inspection, a film for inspection which absorbs laser light and melts is formed on the first surface of the plate for inspection. Modification layer In the forming step, the laser beam is irradiated from the second surface side of the inspection plate member to the inside of the inspection plate member, and a modified layer is formed inside the inspection plate member.
在檢查步驟中，根據藉由通過檢查用板狀物的雷射光線而在檢查用膜形成的熔融痕跡，檢查雷射光線的狀態。以下詳述本實施形態之雷射光線之檢查方法。 In the inspection step, the state of the laser beam is checked based on the melting trace formed on the film for inspection by the laser beam of the inspection plate. The method of inspecting the laser beam of the present embodiment will be described in detail below.
首先，實施在檢查用板狀物形成檢查用膜的檢查用膜配設步驟。圖1(A)係以模式顯示檢查用膜配設步驟的斜視圖。如圖1(A)所示，在本實施形態中所使用的檢查用板狀物11係圓盤狀的半導體晶圓或陶瓷基板等，具有大致平坦的第1面11a、及與第1面11a為相反側的第2面11b。但是，本發明並非限定於此，可使用任意材質、形狀的板狀物作為檢查用板狀物。 First, an inspection film disposing step of forming an inspection film for the inspection plate is carried out. Fig. 1(A) is a perspective view showing a step of arranging a film for inspection in a mode. As shown in Fig. 1(A), the inspection plate member 11 used in the present embodiment is a disk-shaped semiconductor wafer or a ceramic substrate, and has a substantially flat first surface 11a and a first surface. 11a is the second surface 11b on the opposite side. However, the present invention is not limited thereto, and a plate member of any material or shape can be used as the plate for inspection.
在檢查用膜配設步驟中，係在上述檢查用板狀物11的第1面11a形成檢查用膜13。檢查用膜13係以吸收在之後的改質層形成步驟中所使用的雷射光線的材質所形成，若達至預定溫度即熔融。藉由該檢查用膜13，可確認已達至檢查用板狀物11的第1面11a的雷射光線的照射位置。 In the film arrangement step for inspection, the film for inspection 13 is formed on the first surface 11a of the inspection plate member 11. The inspection film 13 is formed by absorbing the material of the laser light used in the subsequent reforming layer forming step, and is melted when it reaches a predetermined temperature. By the inspection film 13, it is possible to confirm the irradiation position of the laser beam that has reached the first surface 11a of the inspection plate member 11.
以具代表性而言，檢查用膜13係由鈦(Ti)、鉭(Ta)、鎢(W)、鋁(Al)、錫(Sn)等金屬材料而成之膜的單層構造、或積層構造。若將檢查用膜13形成為積層構造，可採用鈦膜(例如厚度為200nm)與錫膜(例如厚度為50nm)的積層構造、鈦膜(例如厚度為50nm)與鋁膜(例如厚 度為500nm)的積層構造等。 Typically, the film 13 for inspection is a single layer structure of a film made of a metal material such as titanium (Ti), tantalum (Ta), tungsten (W), aluminum (Al), or tin (Sn), or Laminated structure. When the film for inspection 13 is formed in a laminated structure, a laminated structure of a titanium film (for example, a thickness of 200 nm) and a tin film (for example, a thickness of 50 nm), a titanium film (for example, a thickness of 50 nm), and an aluminum film (for example, a thickness) may be used. A layered structure of a degree of 500 nm).
檢查用膜13的形成方法為任意，可使用例如電漿CVD法或真空蒸鍍法、濺鍍法等。同樣地，檢查用膜13的厚度亦為任意。但是，檢查用膜13的厚度係必須薄至藉由雷射光線而熔融的程度。其中，本發明並非限定於此，可形成吸收雷射光線而熔融的任意檢查用膜。 The method of forming the inspection film 13 is arbitrary, and for example, a plasma CVD method, a vacuum deposition method, a sputtering method, or the like can be used. Similarly, the thickness of the film 13 for inspection is also arbitrary. However, the thickness of the film 13 for inspection must be as thin as to be melted by the laser light. However, the present invention is not limited thereto, and any film for inspection which absorbs laser light and melts can be formed.
在實施檢查用膜配設步驟之後，若在形成有檢查用膜13的檢查用板狀物11的第1面11a側貼附保護構件即可。圖1(B)係以模式顯示在檢查用板狀物11貼附保護構件的樣子的斜視圖。如圖1(B)所示，例如在檢查用板狀物11的第1面11a側(檢查用膜13)貼附樹脂帶等保護構件15。此外，在保護構件15的外周部分係固定環狀框架17。 After the inspection film arrangement step is performed, the protective member may be attached to the first surface 11a side of the inspection plate member 11 on which the inspection film 13 is formed. Fig. 1(B) is a perspective view showing a state in which a protective member is attached to the inspection plate 11 in a mode. As shown in FIG. 1(B), for example, a protective member 15 such as a resin tape is attached to the first surface 11a side (inspection film 13) of the inspection plate member 11. Further, the annular frame 17 is fixed to the outer peripheral portion of the protective member 15.
接著，實施對檢查用板狀物11照射雷射光線而在內部形成改質層的改質層形成步驟。圖2(A)係以模式顯示改質層形成步驟的部分剖面側面圖，圖2(B)係將圖2(A)的一部分放大的放大圖。改質層形成步驟係以例如圖2(A)所示之雷射加工裝置2予以實施。 Next, a reforming layer forming step of irradiating the inspection plate 11 with the laser beam and forming the modified layer therein is performed. Fig. 2(A) is a partial cross-sectional side view showing a step of forming a modified layer in a mode, and Fig. 2(B) is an enlarged view showing a part of Fig. 2(A) in an enlarged manner. The reforming layer forming step is carried out, for example, by the laser processing apparatus 2 shown in Fig. 2(A).
雷射加工裝置2係具備有吸引保持檢查用板狀物11的吸盤平台4。吸盤平台4係與馬達等旋轉驅動源(未圖示)相連結，且繞鉛直軸旋轉。此外，在吸盤平台4的下方設有移動機構(未圖示)，吸盤平台4係以該移動機構以水平方向移動。 The laser processing apparatus 2 is provided with a suction cup platform 4 that sucks and holds the inspection plate member 11. The suction cup platform 4 is coupled to a rotary drive source (not shown) such as a motor, and is rotated about a vertical axis. Further, a moving mechanism (not shown) is provided below the suction cup platform 4, and the suction table 4 is moved in the horizontal direction by the moving mechanism.
吸盤平台4的上面係形成為透過保護構件15 而吸引保持檢查用板狀物11的第1面11a側(檢查用膜13側)的保持面4a。在保持面4a係通過被形成在吸盤平台4的內部的流路(未圖示)而作用吸引源(未圖示)的負壓，且發生吸引檢查用板狀物11的吸引力。在吸盤平台4的周圍係配置有夾持固定環狀框架17的複數夾具6。 The upper surface of the suction cup platform 4 is formed to penetrate the protective member 15 On the other hand, the holding surface 4a on the side of the first surface 11a (on the side of the inspection film 13) for holding the inspection plate member 11 is sucked. The holding surface 4a passes through a flow path (not shown) formed inside the suction cup table 4 to apply a negative pressure of a suction source (not shown), and an attraction force of the suction inspection plate 11 occurs. A plurality of jigs 6 for holding and fixing the annular frame 17 are disposed around the suction cup platform 4.
在吸盤平台4的上方配置有雷射加工單元(雷射光線照射手段)8。雷射加工單元8係使以雷射振盪器(未圖示)進行脈衝振盪的雷射光線L1，聚光在被吸引保持在吸盤平台4的檢查用板狀物11的內部。雷射振盪器係以可將難以被檢查用板狀物11吸收的波長(透過檢查用板狀物11的波長)的雷射光線L1進行振盪的方式構成。 A laser processing unit (laser light irradiation means) 8 is disposed above the suction cup platform 4. The laser processing unit 8 condenses the laser beam L1 that is pulse-oscillated by a laser oscillator (not shown) inside the inspection plate 11 that is sucked and held by the chuck table 4. The laser oscillator is configured to oscillate the laser beam L1 having a wavelength (a wavelength that passes through the inspection plate 11) that is hard to be absorbed by the inspection plate 11 .
在改質層形成步驟中，首先，以形成在檢查用板狀物11的第1面11a側的檢查用膜13與吸盤平台4的保持面4a相對面的方式，將檢查用板狀物11(及保護構件15)載置在吸盤平台4。在該狀態下，若使吸引源的負壓作用，檢查用板狀物11係在第2面11b側露出於上方的狀態下被吸引保持在吸盤平台4。 In the reforming layer forming step, first, the inspection sheet 11 is formed so that the inspection film 13 formed on the first surface 11a side of the inspection plate 11 faces the holding surface 4a of the suction cup table 4 (and the protective member 15) is placed on the suction cup platform 4. In this state, when the negative pressure of the suction source is applied, the inspection plate member 11 is sucked and held by the suction cup table 4 while the second surface 11b side is exposed upward.
接著，使吸盤平台4移動、旋轉，將雷射加工單元8定位在任意加工區域。之後，一邊由雷射加工單元8朝向檢查用板狀物11照射雷射光線L1，一邊使吸盤平台4以水平方向移動。藉此，使雷射光線L1的聚光點近傍產生多光子吸收，可形成直線狀的改質層19。 Next, the chuck table 4 is moved and rotated to position the laser processing unit 8 in an arbitrary processing area. Thereafter, the laser beam unit 11 is irradiated with the laser beam L1 toward the inspection plate 11 to move the chuck table 4 in the horizontal direction. Thereby, multiphoton absorption is caused by the near-convergence point of the laser beam L1, and the linear modified layer 19 can be formed.
由於雷射光線L1難以被檢查用板狀物11吸收，因此如圖2(B)所示，在聚光點近傍未被吸收的雷射光 線L2係漏洩至檢查用板狀物11的第1面11a側。在本實施形態中，由於在檢查用板狀物11的第1面11a設有檢查用膜13，因此通過檢查用板狀物11的雷射光線L2係被檢查用膜13吸收而變化成熱。結果，在檢查用膜13的一部分形成熔融痕跡21。 Since the laser light L1 is hard to be absorbed by the inspection plate 11, as shown in FIG. 2(B), the laser light which is not absorbed at the condensing point is not absorbed. The line L2 leaks to the side of the first surface 11a of the inspection plate member 11. In the present embodiment, the inspection film 13 is provided on the first surface 11a of the inspection plate member 11, so that the laser beam L2 passing through the inspection plate member 11 is absorbed by the inspection film 13 and is changed into heat. . As a result, the molten trace 21 is formed in a part of the film for inspection 13.
在實施改質層形成步驟之後，實施根據因雷射光線L2而在檢查用膜13形成的熔融痕跡21，來檢查雷射光線L1的狀態的檢查步驟。在該檢查步驟中，例如藉由以平面目視熔融痕跡21，來判定雷射光線L1的狀態。 After the reforming layer forming step is performed, an inspection step of inspecting the state of the laser beam L1 based on the molten trace 21 formed on the inspection film 13 by the laser beam L2 is performed. In this inspection step, the state of the laser beam L1 is determined, for example, by visually melting the trace 21 in a plane.
圖3(A)係以模式顯示相對雷射加工單元8的光軸，雷射光線L1以-Y方向偏移時之熔融痕跡21之例的平面圖，圖3(B)係以模式顯示相對雷射加工單元8的光軸，雷射光線L1未偏移時之熔融痕跡21之例的平面圖，圖3(C)係以模式顯示相對雷射加工單元8的光軸，雷射光線L1以+Y方向偏移時之熔融痕跡21之例的平面圖。 Fig. 3(A) is a plan view showing an example of a melting trace 21 when the laser beam L1 is shifted in the -Y direction with respect to the optical axis of the laser processing unit 8, and Fig. 3(B) shows the relative lightning in the mode. A plan view of an optical axis of the processing unit 8 and an example of a melting trace 21 when the laser beam L1 is not shifted. FIG. 3(C) shows a mode relative to the optical axis of the laser processing unit 8, and the laser beam L1 is + A plan view of an example of the melt trace 21 when the Y direction is shifted.
如圖3(A)、圖3(B)、及圖3(C)所示，在改質層19的正下方形成有與改質層19相對應的直線狀的熔融痕跡(改質層正下方熔融痕跡)21a。另一方面，在熔融痕跡21a的近傍形成有因在改質層19被散射的雷射光線而起的斑點狀的熔融痕跡(斑點狀熔融痕跡)21b。 As shown in FIG. 3(A), FIG. 3(B), and FIG. 3(C), a linear melting trace corresponding to the modified layer 19 is formed directly under the modified layer 19 (the modified layer is positive The lower melting trace) 21a. On the other hand, a spot-like melting trace (spot-like melting trace) 21b due to the laser beam scattered by the reforming layer 19 is formed in the vicinity of the melting trace 21a.
在本實施形態中，根據該熔融痕跡21a、21b的位置關係，判定雷射光線L1的狀態。具體而言，如圖3(A)、及圖3(C)所示，若熔融痕跡21b偏向成為交界的熔 融痕跡21a的單側，即判定相對雷射加工單元8的各種光學單元(反射鏡、稜鏡等)(未圖示)或透鏡(未圖示)的光軸，雷射光線L1呈偏移。 In the present embodiment, the state of the laser beam L1 is determined based on the positional relationship of the melt marks 21a and 21b. Specifically, as shown in FIG. 3(A) and FIG. 3(C), if the melt trace 21b is deflected toward the junction, One side of the trace 21a, that is, the optical axis of the various optical units (mirrors, mirrors, etc.) (not shown) or lenses (not shown) of the laser processing unit 8 is determined, and the laser beam L1 is shifted. .
另一方面，如圖3(B)所示，若熔融痕跡21b大致均等地分散在成為交界的熔融痕跡21a的兩側，即判定相對雷射加工單元8的各種光學單元(反射鏡、稜鏡等)(未圖示)或透鏡(未圖示)的光軸，雷射光線L1未偏移。 On the other hand, as shown in FIG. 3(B), when the molten traces 21b are substantially uniformly dispersed on both sides of the molten traces 21a which are the boundary, it is determined that the respective optical units of the laser processing unit 8 (mirrors, mirrors) The optical axis of the lens (not shown) or the lens (not shown) is not offset by the laser beam L1.
如以上所示，在本實施形態之雷射光線之檢查方法中，由於在檢查用板狀物11的第1面11a形成吸收雷射光線L2而熔融的檢查用膜13，因此藉由從第2面11b側被照射且通過檢查用板狀物11的雷射光線L2，在檢查用膜13形成熔融痕跡21。因此，可根據該熔融痕跡21來檢查雷射光線L1的狀態。 As described above, in the inspection method of the laser beam of the present embodiment, the inspection film 13 which is melted by the absorption of the laser beam L2 is formed on the first surface 11a of the inspection plate member 11, and therefore The molten trace 21 is formed on the inspection film 13 by the laser beam L2 which is irradiated on the side of the second surface 11b and passes through the inspection plate 11. Therefore, the state of the laser beam L1 can be checked based on the melt trace 21.
亦即，在本實施形態之雷射光線之檢查方法中，僅在檢查用板狀物11的第1面11a形成檢查用膜13，可根據熔融痕跡21而以目視確認通過檢查用板狀物11的雷射光線L2的照射位置，因此可短時間且低成本檢查雷射光線L1的狀態。 In the method of inspecting the laser beam of the present embodiment, the inspection film 13 is formed only on the first surface 11a of the inspection plate member 11, and the inspection plate can be visually confirmed based on the melting trace 21. Since the irradiation position of the laser beam L2 of 11 is made, the state of the laser beam L1 can be checked in a short time and at low cost.
其中，本發明並非被限定於上述實施形態之記載。例如，上述雷射加工裝置2的雷射加工單元(雷射光線照射手段)8係可變更為任意的雷射加工單元。圖4係以模式顯示有關變形例之雷射加工單元之構成例的圖。 However, the present invention is not limited to the description of the above embodiment. For example, the laser processing unit (laser light irradiation means) 8 of the laser processing apparatus 2 described above is a more arbitrary laser processing unit. Fig. 4 is a view showing a configuration example of a laser processing unit according to a modification in a mode.
如圖4所示，有關變形例之雷射加工單元(雷 射光線照射手段)12係具備有：雷射振盪器14、稜鏡16、空間光調變器18、驅動裝置20、控制裝置22、透鏡24、26、反射鏡28、及接物鏡30。 As shown in FIG. 4, the laser processing unit of the modification (Ray The radiation illuminating means 12 includes a laser oscillator 14, a weir 16, a spatial light modulator 18, a driving device 20, a control device 22, lenses 24 and 26, a mirror 28, and a objective lens 30.
雷射振盪器14係構成為包含例如Nd：YAG等雷射媒質，且可將難以被檢查用板狀物11吸收的波長(透過檢查用板狀物11的波長)的雷射光線L進行脈衝振盪。以雷射振盪器14被振盪的雷射光線L係在稜鏡16的第1反射面16a作反射之後被輸入至空間光調變器18。 The laser oscillator 14 is configured to include a laser medium such as Nd:YAG, and can pulsing a laser beam L having a wavelength (a wavelength that passes through the inspection plate 11) that is hard to be absorbed by the inspection plate 11 oscillation. The laser beam L oscillated by the laser oscillator 14 is reflected by the first reflecting surface 16a of the crucible 16 and then input to the spatial light modulator 18.
空間光調變器18係使用藉由作2次元排列的複數畫素所示之相位調變用的全像，來調變雷射光線L的相位。以相位調變用的全像而言，若使用根據計算所求出的CGH(Computer Generated Hologram，電腦成形全像)即可。 The spatial light modulator 18 modulates the phase of the laser beam L by using a hologram for phase modulation as shown by a complex pixel in a two-dimensional array. For the hologram for phase modulation, it is sufficient to use CGH (Computer Generated Hologram) calculated from the calculation.
其中，在圖4中係例示使用反射型的空間光調變器18的雷射加工單元12，惟亦可使用透過型的空間光調變器。若使用透過型的空間光調變器，可省略稜鏡。 Here, in FIG. 4, the laser processing unit 12 using the reflective spatial light modulator 18 is exemplified, but a transmissive spatial light modulator may be used. If a transmissive spatial light modulator is used, 稜鏡 can be omitted.
驅動裝置20係設定空間光調變器18所具備之各畫素的相位調變量。藉此，在空間光調變器18被顯示相位調變用的全像。控制裝置22為例如電腦，控制驅動機構20的動作，使空間光調變器18顯示適合的全像。藉由該控制裝置22，可在空間光調變器18顯示使雷射光線L聚光在檢查用板狀物11的內部的複數位置的全像。 The drive device 20 sets the phase modulation variable of each pixel included in the spatial light modulator 18. Thereby, the hologram for phase modulation is displayed in the spatial light modulator 18. The control device 22 is, for example, a computer that controls the operation of the drive mechanism 20 to cause the spatial light modulator 18 to display a suitable hologram. By the control device 22, the spatial light modulator 18 can display the hologram of the plurality of positions at which the laser beam L is condensed inside the inspection plate 11.
由空間光調變器18被輸出的雷射光線L係在稜鏡16的第2反射面16b被反射，經由透鏡24、26及反 射鏡28而入射至接物鏡30。透鏡24、26係以空間光調變器18及接物鏡30互相成為成像關係的方式作配置，空間光調變器18中的雷射光線L的像係被成像在接物鏡30。 The laser beam L outputted by the spatial light modulator 18 is reflected on the second reflecting surface 16b of the crucible 16, and passes through the lenses 24, 26 and The mirror 28 is incident on the objective lens 30. The lenses 24 and 26 are arranged such that the spatial light modulator 18 and the objective lens 30 are in an imaging relationship with each other, and the image of the laser beam L in the spatial light modulator 18 is imaged on the objective lens 30.
接物鏡30係使被入射的雷射光線L聚光在檢查用板狀物11的內部的複數位置。藉由使用該雷射加工單元12，可在複數位置同時形成改質層19。 The objective lens 30 converges the incident laser light L at a plurality of positions inside the inspection plate 11. By using the laser processing unit 12, the reforming layer 19 can be simultaneously formed at a plurality of positions.
此外，上述實施形態之構成、方法等只要在未脫離本發明之目的之範圍，即可適當變更而實施。 In addition, the configuration, the method, and the like of the above-described embodiments can be appropriately changed and implemented without departing from the scope of the invention.
11‧‧‧檢查用板狀物 11‧‧‧Check plate
11a‧‧‧第1面 11a‧‧‧1st
11b‧‧‧第2面 11b‧‧‧2nd
13‧‧‧檢查用膜 13‧‧‧Inspection film
15‧‧‧保護構件 15‧‧‧Protection components
17‧‧‧框架 17‧‧‧Frame
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