TW201629275A - Lipseals and contact elements for semiconductor electroplating apparatuses - Google Patents
Lipseals and contact elements for semiconductor electroplating apparatuses Download PDFInfo
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Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/005—Contacting devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
本發明係關於用於積體電路之鑲嵌內連線之形成，以及在積體電路製造期間使用之電鍍設備。This invention relates to the formation of damascene interconnects for use in integrated circuits, as well as electroplating equipment used during the fabrication of integrated circuits.
電鍍為在積體電路(IC)製造中使用以沉積一或多個傳導性金屬層的常用技術。在一些製造過程中，電鍍用以在各種基板特徵之間沉積單層或多層銅內連線。用於電鍍之設備通常包括一電鍍單元，其具有電解質池/槽、以及經設計以在電鍍期間固持半導體基板的抓斗。Electroplating is a common technique used in the fabrication of integrated circuits (ICs) to deposit one or more conductive metal layers. In some manufacturing processes, electroplating is used to deposit a single or multiple layers of copper interconnects between various substrate features. Apparatus for electroplating typically includes a plating unit having an electrolyte bath/tank and a grab designed to hold the semiconductor substrate during electroplating.
在電鍍設備之操作期間，將半導體基板浸沒入電解質池中，使得基板之一表面暴露於電解質。與基板表面一起建立的一或多個電接觸用以驅動電流通過電鍍單元並由電解質中可用之金屬離子將金屬沉積至基板表面上。通常，電接觸元件係用以形成在基板與作為電流來源的導電板之間的電連接件。然而，在一些配置中，基板上被電連接件接觸的傳導性晶種層可能朝基板的邊緣變薄，從而使得更難以與基板建立最佳電連接。During operation of the electroplating apparatus, the semiconductor substrate is immersed in the electrolyte bath such that one surface of the substrate is exposed to the electrolyte. One or more electrical contacts established with the surface of the substrate are used to drive current through the plating unit and deposit metal onto the surface of the substrate from metal ions available in the electrolyte. Typically, electrical contact elements are used to form electrical connections between the substrate and the conductive plates as a source of current. However, in some configurations, the conductive seed layer on the substrate that is contacted by the electrical connections may become thinner toward the edges of the substrate, making it more difficult to establish an optimal electrical connection with the substrate.
電鍍中出現的另一問題為電鍍溶液之可能腐蝕性質。因此，在許多電鍍設備中，為避免電解質滲漏、並避免電解質與除了電鍍單元之內部及基板之指定用於電鍍之面以外的電鍍設備之元件接觸之目的，唇形密封用於抓斗與基板的界面處。Another problem that arises in electroplating is the possible corrosive nature of the plating solution. Therefore, in many electroplating apparatuses, in order to avoid electrolyte leakage and to avoid contact of the electrolyte with elements of plating equipment other than the inside of the plating unit and the substrate designated for electroplating, the lip seal is used for grabs and At the interface of the substrate.
本文中揭露用於電鍍抓斗中的唇形密封組件，該唇形密封組件用以嚙合、並在電鍍期間將電流供應至半導體基板。在一些實施例中，一唇形密封組件可包括:用以嚙合半導體基板的彈性唇形密封；以及用以在電鍍期間將電流供應至半導體基板的一或多個接觸元件。在一些實施例中，在嚙合時，該彈性唇形密封實質上排除電鍍溶液進入半導體基板之周邊區。A lip seal assembly for use in an electroplating grapple for engaging and supplying current to a semiconductor substrate during electroplating is disclosed herein. In some embodiments, a lip seal assembly can include: an elastomeric lip seal to engage a semiconductor substrate; and one or more contact elements to supply current to the semiconductor substrate during electroplating. In some embodiments, the elastomeric lip seal substantially excludes the plating solution from entering the peripheral region of the semiconductor substrate when engaged.
在一些實施例中，該一或多個接觸元件在結構上與該彈性唇形密封整合，且包括第一暴露部分，該第一暴露部分在該唇形密封與該基板嚙合時接觸該基板之周邊區。在一些實施例中，該一或多個接觸元件可進一步包括用以與電流來源形成電連接之第二暴露部分。在某些此種實施例中，電流來源可為該電鍍抓斗之導電板。在一些實施例中，該一或多個接觸元件可進一步包括連接該第一與該第二暴露部分之第三暴露部分。在某些此種實施例中，該第三暴露部分可在結構上整合於該彈性唇形密封之表面上。In some embodiments, the one or more contact elements are structurally integrated with the resilient lip seal and include a first exposed portion that contacts the substrate when the lip seal engages the substrate The surrounding area. In some embodiments, the one or more contact elements can further include a second exposed portion to form an electrical connection with a source of electrical current. In some such embodiments, the source of current can be the conductive plate of the electroplated grab. In some embodiments, the one or more contact elements can further include a third exposed portion that connects the first and second exposed portions. In some such embodiments, the third exposed portion can be structurally integrated onto the surface of the resilient lip seal.
在一些實施例中，該一或多個接觸元件可包括連接該第一與該第二暴露部分之未暴露部分，且該未暴露部分可在結構上整合於該彈性唇形密封之表面下方。在某些此種實施例中，該彈性唇形密封係模製於該未暴露部分上。In some embodiments, the one or more contact elements can include unexposed portions that connect the first and second exposed portions, and the unexposed portions can be structurally integrated beneath the surface of the resilient lip seal. In some such embodiments, the resilient lip seal is molded over the unexposed portion.
在一些實施例中，該彈性唇形密封可包括第一內徑，該第一內徑界定實質上圓形周界以用於排除電鍍溶液進入周邊區，且該一或多個接觸元件之該第一暴露部分界定比該第一內徑大之第二內徑。在某些此種實施例中，該第一內徑與該第二內徑之間的差之量值為約0.5 mm或小於0.5 mm。在某些此種實施例中，該第一內徑與該第二內徑之間的差之量值為約0.3 mm或小於0.3 mm。In some embodiments, the resilient lip seal can include a first inner diameter that defines a substantially circular perimeter for excluding the plating solution into the peripheral region, and the one or more contact elements The first exposed portion defines a second inner diameter that is greater than the first inner diameter. In some such embodiments, the difference between the first inner diameter and the second inner diameter is about 0.5 mm or less. In some such embodiments, the difference between the first inner diameter and the second inner diameter is about 0.3 mm or less.
在一些實施例中，唇形密封組件可包括一或多個可撓性接觸元件，其用於在電鍍期間將電流供應至半導體基板。在某些此種實施例中，該一或多個可撓性接觸元件之至少一部分可保形地位於該彈性唇形密封之上表面上，且在與該半導體基板嚙合時，該可撓性接觸元件可經配置以撓曲並形成與該半導體基板介接之保形接觸表面。在某些此種實施例中，該保形接觸表面與該半導體基板之斜邊介接。In some embodiments, the lip seal assembly can include one or more flexible contact elements for supplying electrical current to the semiconductor substrate during electroplating. In some such embodiments, at least a portion of the one or more flexible contact elements are conformally disposed on an upper surface of the resilient lip seal, and the flexible portion is engaged with the semiconductor substrate The contact element can be configured to flex and form a conformal contact surface that interfaces with the semiconductor substrate. In some such embodiments, the conformal contact surface interfaces with a beveled edge of the semiconductor substrate.
在一些實施例中，該一或多個可撓性接觸元件可具有不配置成在基板被該唇形密封組件嚙合時接觸基板的部分。在某些此種實施例中，該非接觸部分包含非適型材料。在一些實施例中，該保形接觸表面與該半導體基板形成連續界面，而在一些實施例中，該保形接觸表面與該半導體基板形成具有間隙之非連續界面。在某些此種形成非連續界面之實施例中，該一或多個可撓性接觸元件可包括設置在該彈性唇形密封之表面上之複數導線尖端或一導線網。在一些實施例中，保形地位於該彈性唇形密封之上表面上之該一或多個可撓性接觸元件包括使用選自化學氣相沈積、物理氣相沈積及電鍍之一或多種技術形成之傳導性沈積物。在一些實施例中，保形地位於該彈性唇形密封之上表面上之該一或多個可撓性接觸元件可包括導電性彈性材料。In some embodiments, the one or more flexible contact elements can have portions that are not configured to contact the substrate when the substrate is engaged by the lip seal assembly. In some such embodiments, the non-contact portion comprises a non-compliant material. In some embodiments, the conformal contact surface forms a continuous interface with the semiconductor substrate, and in some embodiments, the conformal contact surface forms a discontinuous interface with the semiconductor substrate having a gap. In some such embodiments of forming a discontinuous interface, the one or more flexible contact elements can include a plurality of wire tips or a wire mesh disposed on a surface of the resilient lip seal. In some embodiments, the one or more flexible contact elements conformally positioned on the upper surface of the resilient lip seal comprise using one or more techniques selected from the group consisting of chemical vapor deposition, physical vapor deposition, and electroplating. Conductive deposits formed. In some embodiments, the one or more flexible contact elements conformally positioned on the upper surface of the resilient lip seal can comprise a conductive elastomeric material.
本文中亦揭露用於電鍍抓斗中的彈性唇形密封，其用以將半導體基板支撐、對準並密封於該電鍍抓斗中。在一些實施例中，唇形密封包括：可撓性彈性支撐邊緣、及位於該可撓性彈性支撐邊緣上方的可撓性彈性上部部分。在一些實施例中，該可撓性彈性支撐邊緣具有經配置以支撐及密封半導體基板之密封凸出部。在某些此種實施例中，在密封該基板時，該密封凸出部界定用於排除電鍍溶液的周界。在一些實施例中，該可撓性彈性上部部分包括：頂表面，其經配置以被壓縮；及內側表面，其相對於該密封凸出部位於外側。在某些此種實施例中，該內側表面可經配置以在該頂表面被壓縮時向內移動並對準半導體基板，且在一些實施例中，經配置以在該頂表面被壓縮時向內移動約0.2 mm或至少0.2 mm。在一些實施例中，當該頂表面未被壓縮時，該內側表面定位成足夠向外以允許半導體基板在不接觸該上部部分的情況下降低通過該可撓性彈性上部部分並置放於該密封凸出部上，但其中在將該半導體基板置放於該密封凸出部上並壓縮該頂表面時，該內側表面接觸並推動該半導體基板，從而將該半導體基板對準於該電鍍抓斗中。Also disclosed herein is an elastomeric lip seal for use in an electroplating grapple for supporting, aligning, and sealing a semiconductor substrate in the electroplating grapple. In some embodiments, the lip seal includes a flexible resilient support edge and a flexible, resilient upper portion over the flexible resilient support edge. In some embodiments, the flexible resilient support edge has a sealing projection configured to support and seal the semiconductor substrate. In some such embodiments, the sealing projection defines a perimeter for excluding the plating solution when the substrate is sealed. In some embodiments, the flexible resilient upper portion includes a top surface configured to be compressed, and an inner side surface that is laterally opposite the sealing projection. In some such embodiments, the inner side surface can be configured to move inwardly and align with the semiconductor substrate as the top surface is compressed, and in some embodiments, configured to be compressed when the top surface is compressed Move within about 0.2 mm or at least 0.2 mm. In some embodiments, when the top surface is uncompressed, the inner side surface is positioned sufficiently outward to allow the semiconductor substrate to be lowered through the flexible elastic upper portion and placed in the seal without contacting the upper portion On the protrusion, but when the semiconductor substrate is placed on the sealing protrusion and compresses the top surface, the inner surface contacts and pushes the semiconductor substrate, thereby aligning the semiconductor substrate with the plating grab in.
本文中亦揭露將半導體基板對準並密封於具有彈性唇形密封之電鍍抓斗中之方法。在一些實施例中，該方法包括下列步驟：打開抓斗；提供基板至該抓斗；將該基板降低而通過唇形密封之上部部分並到達該唇形密封之密封凸出部上；壓縮該唇形密封之上部部分的頂表面以對準該基板；並且對該基板施壓以在該密封凸出部與該基板之間形成密封。在一些實施例中，壓縮該唇形密封之上部部分的頂表面之步驟，使該唇形密封之上部部分的內側表面推動該基板，從而將該基板對準於該抓斗中。在一些實施例中，壓縮該頂表面以對準該基板之步驟，包括用該抓斗之錐體的第一表面對該頂表面施壓，而對該基板施壓以形成密封之步驟，包括用該抓斗之錐體的第二表面對該基板施壓。Also disclosed herein is a method of aligning and sealing a semiconductor substrate into an electroplated grab having an elastomeric lip seal. In some embodiments, the method includes the steps of: opening a grab; providing a substrate to the grab; lowering the substrate through the upper portion of the lip seal and onto the sealing projection of the lip seal; compressing the a top surface of the upper portion of the lip seal to align the substrate; and pressing the substrate to form a seal between the sealing projection and the substrate. In some embodiments, the step of compressing the top surface of the upper portion of the lip seal causes the inner surface of the upper portion of the lip seal to urge the substrate to align the substrate in the grab. In some embodiments, the step of compressing the top surface to align the substrate includes the step of applying pressure to the top surface with a first surface of the cone of the grab and pressing the substrate to form a seal, including The substrate is pressed with a second surface of the cone of the grab.
在一些實施例中，壓縮該頂表面以對準該基板之步驟，包括用該抓斗之第一按壓組件推動該頂表面，而對該基板施壓以形成密封之步驟，包括用該抓斗之第二按壓組件對該基板施壓。在某些此種實施例中，該第二按壓組件可相對於該第一按壓組件而獨立地移動。在某些此種實施例中，壓縮該頂表面之步驟，包括基於半導體基板之直徑來調整該第一按壓組件所施加之壓力。In some embodiments, the step of compressing the top surface to align the substrate includes the step of pressing the top surface with the first pressing component of the grab and pressing the substrate to form a seal, including using the grab The second pressing component presses the substrate. In some such embodiments, the second compression component is independently movable relative to the first compression component. In some such embodiments, the step of compressing the top surface includes adjusting a pressure applied by the first press assembly based on a diameter of the semiconductor substrate.
本文中亦揭露用以在電鍍期間固持、密封、並提供電源至半導體基板的杯體組件，該杯體組件包含:杯底元件，其包含主體部分以及力矩臂；設置在該力矩臂上的彈性密封元件；以及設置在該彈性密封元件上的電接觸元件。當被半導體基板抵著而施壓時，該密封元件抵著該基板而密封，以界定該基板之在電鍍期間實質上排除電鍍溶液的周邊區，且當密封元件抵著該基板而密封時，該電接觸元件可在該周邊區接觸基板，使得該接觸元件可在電鍍期間提供電源至該基板。在一些實施例中，當半導體基板被抵著該力矩臂施壓時，該主體部分未實質上撓曲。Also disclosed herein is a cup assembly for holding, sealing, and providing a power source to a semiconductor substrate during electroplating, the cup assembly including: a cup bottom member including a body portion and a moment arm; and an elasticity disposed on the moment arm a sealing member; and an electrical contact member disposed on the elastic sealing member. When pressed by the semiconductor substrate, the sealing member is sealed against the substrate to define a peripheral region of the substrate that substantially excludes the plating solution during plating, and when the sealing member is sealed against the substrate, The electrical contact element can contact the substrate at the peripheral region such that the contact element can provide power to the substrate during electroplating. In some embodiments, the body portion is not substantially flexed when the semiconductor substrate is pressed against the moment arm.
在一些實施例中，該主體部分被牢固地附加至該杯體結構的另一特徵物，且該主體部分之平均垂直厚度比上該力矩臂之平均垂直厚度的比例大於約5，使得當半導體基板被抵著該力矩臂施壓時，該主體部分未實質上撓曲。在一些實施例中，該電接觸元件具有實質上平坦但可撓性接觸部分，該接觸部分設置在該彈性密封元件的實質上水平部分上。在一些實施例中，該彈性密封元件在製造期間與該杯底元件結合。In some embodiments, the body portion is securely attached to another feature of the cup structure, and the ratio of the average vertical thickness of the body portion to the average vertical thickness of the moment arm is greater than about 5, such that when the semiconductor When the substrate is pressed against the moment arm, the body portion is not substantially deflected. In some embodiments, the electrical contact element has a substantially flat but flexible contact portion that is disposed on a substantially horizontal portion of the resilient sealing element. In some embodiments, the elastomeric sealing element is bonded to the cup bottom element during manufacture.
在以下描述中，闡述許多特定細節以提供對所呈現之概念之詳盡理解。所呈現之概念毋須一些或全部的該等特定細節而可被實施。在其他情況下，為避免不必要地混淆所描述之概念，未詳細描述熟知的過程操作。儘管將結合特定實施例描述一些概念，應理解該等實施例不希望為限制性的。In the following description, numerous specific details are set forth to provide a The concepts presented may be implemented without some or all of such specific details. In other instances, well-known process operations have not been described in detail in order to avoid unnecessarily obscuring the described concepts. Although some concepts are described in conjunction with the specific embodiments, it is understood that the embodiments are not intended to be limiting.
圖1中呈現例示性電鍍設備以便為本文所揭露之各種唇形密封及接觸元件實施例提供一些情境。具體而言，圖1呈現用於電化學地處理半導體晶圓之晶圓固持及定位設備100之透視圖。設備100包括晶圓嚙合組件，其有時稱作「抓斗元件」或「抓斗組件」或簡稱「抓斗」。抓斗組件包含杯體101及錐體103。如隨後圖式所示，杯體101固持晶圓，且錐體103將晶圓緊固地夾於杯體中。可使用除了此處具體描繪之杯體及錐體設計以外之其他杯體及錐體設計。共同特徵為具有晶圓駐留於其中之內部區之杯體，以及將晶圓抵著杯體施壓以將晶圓固持於位置上之錐體。An exemplary plating apparatus is presented in FIG. 1 to provide some context for the various lip seal and contact element embodiments disclosed herein. In particular, Figure 1 presents a perspective view of a wafer holding and positioning apparatus 100 for electrochemically processing semiconductor wafers. Apparatus 100 includes a wafer engagement assembly, sometimes referred to as a "grab component" or "grab assembly" or simply a "grab." The grab assembly includes a cup 101 and a cone 103. As shown in the following figures, the cup 101 holds the wafer and the cone 103 securely holds the wafer in the cup. Cup and cone designs other than the cup and cone designs specifically depicted herein may be used. Common features are a cup having an interior region in which the wafer resides, and a cone that presses the wafer against the cup to hold the wafer in place.
在所描繪之實施例中，抓斗組件(其包括杯體101及錐體103)由撐桿104支撐，而撐桿104連接至頂板105。此組件(101、103、104及105)由馬達107經由連接至頂板105之主軸106來驅動。馬達107附接至安裝托架(未圖示)。在電鍍期間，主軸106將扭矩(來自馬達107)傳遞至該抓斗組件，從而使固持於其中之晶圓(此圖中未圖示)旋轉。主軸106內之氣缸(未圖示)亦提供用於嚙合杯體101與錐體103之垂直力。當抓斗解開時(未圖示)，具有末端執行器臂之機械手可將晶圓***於杯體101與錐體103之間。在***晶圓之後，錐體 103與杯體101嚙合，此將晶圓固定於設備100內，從而使晶圓之一側上之工作表面(但另一側並未)暴露以用於與電解質溶液接觸。In the depicted embodiment, the grapple assembly (which includes the cup 101 and the cone 103) is supported by a strut 104 that is coupled to the top plate 105. This assembly (101, 103, 104, and 105) is driven by motor 107 via a spindle 106 that is coupled to top plate 105. Motor 107 is attached to a mounting bracket (not shown). During electroplating, the spindle 106 transfers torque (from the motor 107) to the grapple assembly to rotate the wafer held therein (not shown). A cylinder (not shown) within the main shaft 106 also provides a vertical force for engaging the cup 101 and the cone 103. When the grab is unwrapped (not shown), a robot having an end effector arm can insert the wafer between the cup 101 and the cone 103. After the wafer is inserted, the cone 103 engages the cup 101, which secures the wafer within the device 100, thereby exposing the working surface on one side of the wafer (but not the other side) for use with the electrolyte The solution is in contact.
在某些實施例中，抓斗組件包括保護錐體103以防飛濺之電解質之防濺裙109。在所描繪之實施例中，防濺裙109包括垂直圓周套管及圓形帽部分。間隔部件110維持防濺裙109與錐體103之間的分隔。In certain embodiments, the grapple assembly includes a splash skirt 109 that protects the cone 103 from splashing electrolyte. In the depicted embodiment, the splash skirt 109 includes a vertical circumferential sleeve and a circular cap portion. The spacer member 110 maintains a separation between the splash skirt 109 and the cone 103.
出於此論述之目的，包括元件101至110之組件統稱為「晶圓固持器」(或「基板固持器」)111。然而應注意，「晶圓固持器」/「基板固持器」之概念通常擴展至嚙合晶圓/基板並允許其移動及定位的元件之各種組合及子組合。For the purposes of this discussion, the components including components 101 through 110 are collectively referred to as "wafer holders" (or "substrate holders") 111. It should be noted, however, that the concept of "wafer holder" / "substrate holder" typically extends to various combinations and sub-combinations of components that engage the wafer/substrate and allow it to move and position.
傾斜組件(未圖示)可連接至晶圓固持器以准許將晶圓成角度地浸沒(與平坦水平浸沒成對比)至電鍍溶液中。在一些實施例中，使用板及樞軸接點之驅動機制與配置來沿著弧形路徑(未圖示)移動晶圓固持器111，因此，將晶圓固持器111之近端(亦即，杯體及錐體組件)傾斜。A tilting assembly (not shown) can be coupled to the wafer holder to permit angular immersion of the wafer (in contrast to flat horizontal immersion) into the plating solution. In some embodiments, the drive mechanism and configuration of the plate and pivot contacts are used to move the wafer holder 111 along an arcuate path (not shown), thus, the proximal end of the wafer holder 111 (ie, , cup body and cone assembly) tilt.
另外，經由致動器(未圖示)垂直地向上或向下升降整個晶圓固持器111以將晶圓固持器之近端浸沒至電鍍溶液中。因此，二元件式定位機制針對晶圓提供沿著與電解質表面垂直之軌道的垂直移動、以及允許偏離水平定向(亦即平行於電解質表面)的傾斜移動(傾斜晶圓浸沒能力) 兩者。In addition, the entire wafer holder 111 is vertically lifted up or down via an actuator (not shown) to immerse the proximal end of the wafer holder into the plating solution. Thus, the two-element positioning mechanism provides both vertical movement of the wafer along a track perpendicular to the surface of the electrolyte, as well as tilting movement (inclination of wafer immersion capability) that allows for deviation from horizontal orientation (ie, parallel to the electrolyte surface).
注意晶圓固持器111與電鍍單元115一起使用，電鍍單元115具有容納陽極腔室157及電鍍溶液的電鍍腔室117。 腔室157固持陽極119(例如銅陽極)，且可包括膜片或經設計以將不同電解質化學物質維持於陽極室及陰極室中之其他分離器。在所描繪之實施例中，擴散器153用於以一致的前緣將電解質朝著旋轉的晶圓向上引導。在某些實施例中，流量擴散器係高電阻虛擬陽極(HRVA)板，其由一片固體絕緣材料(例如塑膠)製成，具有大量(例如，4000-15000個)一維小孔(直徑為0.01吋至0.050吋)並連接至板上方之陰極腔室。孔之總橫截面面積小於總投影面積之約5%，而因此將相當大之流動阻力引入於電鍍單元中，從而有助於改良系統之電鍍一致性。2008年11月7日申請之美國專利申請案第12/291,356號中提供對高電阻虛擬陽極板及用於電化學地處理半導體晶圓之對應設備之額外描述，該專利申請案出於所有目的特此以引用之方式全文併入本文中。電鍍單元亦可包括用於控制及產生分離電解質流動型式之分離膜片。在另一實施例中，使用膜片以界定陽極腔室，陽極腔室含有實質上無抑制劑、加速劑或其他無機電鍍添加劑之電解質。Note that the wafer holder 111 is used together with the plating unit 115 having a plating chamber 117 that houses the anode chamber 157 and the plating solution. The chamber 157 holds the anode 119 (e.g., a copper anode) and may include a diaphragm or other separator designed to maintain different electrolyte chemistries in the anode and cathode compartments. In the depicted embodiment, the diffuser 153 is used to direct the electrolyte upwardly toward the rotating wafer with a consistent leading edge. In some embodiments, the flow diffuser is a high resistance virtual anode (HRVA) plate made of a piece of solid insulating material (eg, plastic) having a large number (eg, 4000-15000) of one-dimensional apertures (diameter 0.01 吋 to 0.050 吋) and connected to the cathode chamber above the plate. The total cross-sectional area of the holes is less than about 5% of the total projected area, and thus a relatively large flow resistance is introduced into the plating unit, thereby contributing to improved plating uniformity of the system. Additional descriptions of high resistance virtual anode plates and corresponding devices for electrochemically processing semiconductor wafers are provided in U.S. Patent Application Serial No. 12/291,356, filed on Nov. 7, 2008. This is hereby incorporated by reference in its entirety. The electroplating unit can also include a separation membrane for controlling and producing a separate electrolyte flow pattern. In another embodiment, a membrane is used to define an anode chamber containing an electrolyte that is substantially free of inhibitors, accelerators, or other inorganic plating additives.
電鍍單元115亦可包括管道或管道接觸件，用於使電解質循環通過電鍍單元並對著被電鍍之工件。例如，電鍍單元115包括通過陽極119中心之孔而垂直地延伸至陽極腔室157中心之電解質入口管131。在其他實施例中，單元包括電解質入口歧管，其將流體引入至陰極腔室中擴散器/HRVA板下方之腔室的周邊壁(未圖示)處。在一些情況下，入口管131包括在膜片153之兩側(陽極側及陰極側)上的出口噴嘴。此設置將電解質遞送至陽極腔室及陰極腔室兩者。在其他實施例中，陽極腔室及陰極腔室由流動阻力膜片153分離，且每一腔室具有分離電解質之分離流動循環。如圖1之實施例中所示，入口噴嘴155將電解質提供至膜片153之陽極側。Plating unit 115 may also include piping or piping contacts for circulating electrolyte through the plating unit and against the workpiece being plated. For example, the plating unit 115 includes an electrolyte inlet tube 131 that extends vertically to the center of the anode chamber 157 through a hole in the center of the anode 119. In other embodiments, the unit includes an electrolyte inlet manifold that introduces fluid to a peripheral wall (not shown) of the chamber below the diffuser/HRVA plate in the cathode chamber. In some cases, the inlet tube 131 includes outlet nozzles on both sides (anode side and cathode side) of the diaphragm 153. This arrangement delivers electrolyte to both the anode and cathode chambers. In other embodiments, the anode and cathode chambers are separated by a flow resistance diaphragm 153, and each chamber has a separate flow cycle separating the electrolyte. As shown in the embodiment of FIG. 1, inlet nozzle 155 provides electrolyte to the anode side of diaphragm 153.
另外，電鍍單元115包括沖洗排水管路159及電鍍溶液回流管路161，每一管路直接連接至電鍍腔室117。此外，沖洗噴嘴163在正常操作期間遞送去離子沖洗水以清潔晶圓及/或杯體。電鍍溶液通常填充腔室117之大部分。為了緩和飛濺及氣泡之產生，腔室117包括用於電鍍溶液回流之內部堰165，及用於沖洗水回流的外部堰167。在所描繪實施例中，該等堰為電鍍腔室117之壁中之圓周垂直狹槽。In addition, the plating unit 115 includes a flushing drain line 159 and a plating solution return line 161, each of which is directly connected to the plating chamber 117. In addition, the rinse nozzle 163 delivers deionized rinse water during normal operation to clean the wafer and/or the cup. The plating solution typically fills a majority of the chamber 117. To mitigate the generation of splashes and bubbles, chamber 117 includes an internal crucible 165 for reflow of the plating solution, and an external crucible 167 for flushing water back. In the depicted embodiment, the turns are circumferential vertical slots in the walls of the plating chamber 117.
如上文所陳述，電鍍抓斗通常包括唇形密封及一或多個接觸元件以提供密封及電連接功能。唇形密封可由彈性材料製成。唇形密封與半導體基板之表面形成密封且排除電解質進入基板之周邊區。無沈積在此周邊區中發生，且其不用於形成IC裝置，亦即，該周邊區並非工作表面之一部分。有時，因為排除電解質進入此區，故該區域亦稱作邊緣排除區域。周邊區用於在處理期間支撐及密封基板，並用於形成與接觸元件的電連接。由於通常需要增加工作表面，因此周邊區需要儘可能小，同時維持上述功能。在某些實施例中，周邊區距基板之邊緣在約0.5毫米與3毫米之間。As stated above, the electroplating grab typically includes a lip seal and one or more contact elements to provide a sealing and electrical connection function. The lip seal can be made of an elastic material. The lip seal forms a seal with the surface of the semiconductor substrate and excludes electrolyte from entering the peripheral region of the substrate. No deposition occurs in this peripheral zone and it is not used to form the IC device, i.e., the peripheral zone is not part of the working surface. Sometimes, because the electrolyte is excluded from entering this zone, this zone is also referred to as the edge exclusion zone. The peripheral region is used to support and seal the substrate during processing and to form an electrical connection with the contact elements. Since it is often necessary to increase the working surface, the peripheral area needs to be as small as possible while maintaining the above functions. In some embodiments, the perimeter region is between about 0.5 mm and 3 mm from the edge of the substrate.
在安裝期間，唇形密封及接觸元件與抓斗之其他元件組裝在一起。一般熟習此技術者將瞭解此操作之難度，特別是當周邊區較小時。由此抓斗提供之總開口可與基板之大小(例如，用於容納200 mm晶圓、300 mm晶圓、450 mm晶圓等之開口)相當。此外，基板具有其本身之尺寸容差(例如，根據SEMI規格對於典型300 mm晶圓為+/- 0.2毫米)。特別困難之任務為對準彈性唇形密封及接觸元件，此係因為兩者係由相對可撓性材料製成。此兩個元件需要具有極其精確之相對位置。當唇形密封之密封邊緣及接觸元件定位成彼此相距過遠時，在抓斗之操作期間，於接觸件與基板之間可能形成不充分電連接或不形成電連接。同時，當密封邊緣定位成離接觸件過近時，接觸件可能干擾密封並導致滲漏至周邊區中。例如，習知接觸環常用複數可撓性「指狀物」製成，其以類彈簧動作對基板施壓以建立電連接，如圖2之抓斗組件(標註杯體201、錐體203及唇形密封212)所示。此等可撓性指狀物208不僅極其難以相對於唇形密封212對準，又易於在安裝期間損壞，且若當電解質進入周邊區時難以清潔。具有整合接觸元件之唇形密封組件 The lip seal and contact elements are assembled with the other components of the grapple during installation. Those skilled in the art will understand the difficulty of this operation, especially when the surrounding area is small. The total opening provided by the grab can be comparable to the size of the substrate (eg, for opening 200 mm wafers, 300 mm wafers, 450 mm wafers, etc.). In addition, the substrate has its own dimensional tolerance (eg, +/- 0.2 mm for a typical 300 mm wafer according to SEMI specifications). A particularly difficult task is to align the elastic lip seals and contact elements because they are made of a relatively flexible material. These two components need to have extremely precise relative positions. When the sealing edge of the lip seal and the contact elements are positioned too far apart from each other, insufficient electrical connection or electrical connection may be formed between the contact and the substrate during operation of the grapple. At the same time, when the sealing edge is positioned too close to the contact, the contact may interfere with the seal and cause leakage into the peripheral zone. For example, conventional contact rings are often made of a plurality of flexible "fingers" that pressurize the substrate to establish an electrical connection, such as the grab assembly (labeled cup 201, cone 203, and The lip seal 212) is shown. These flexible fingers 208 are not only extremely difficult to align with respect to the lip seal 212, but are also susceptible to damage during installation and are difficult to clean if the electrolyte enters the peripheral zone. Lip seal assembly with integrated contact elements
本文中提供具有整合至彈性唇形密封內之接觸元件之新穎唇形密封組件。在此領域中，取代安裝及對準兩個分開之密封及電性的元件(例如，唇形密封及接觸環)，在組件之製造期間對準並整合兩個元件。在安裝期間及在抓斗之操作期間維持此對準。因而，僅需要設定及檢察對準一次，亦即，在組件之製造期間。A novel lip seal assembly having contact elements integrated into an elastomeric lip seal is provided herein. In this field, instead of mounting and aligning two separate sealed and electrically conductive components (e.g., lip seals and contact rings), the two components are aligned and integrated during manufacture of the assembly. This alignment is maintained during installation and during operation of the grab. Thus, it is only necessary to set and inspect the alignment once, that is, during the manufacture of the assembly.
圖3A為根據某些實施例之具有唇形密封組件302之抓斗300之一部分的示意圖解。唇形密封組件302包括用於嚙合半導體基板(未圖示)的彈性唇形密封304。唇形密封304與基板形成密封，並排除電鍍溶液進入半導體基板之周邊區，如在此文獻之其他部分中所述。唇形密封304可包括向上及朝向基板延伸之凸出部308。凸出部可被壓縮且在一定程度上變形以建立密封。唇形密封304具有界定用於排除電鍍溶液進入周邊區之周界的第一內徑。FIG. 3A is a schematic illustration of a portion of a grab 300 having a lip seal assembly 302 in accordance with some embodiments. The lip seal assembly 302 includes a resilient lip seal 304 for engaging a semiconductor substrate (not shown). The lip seal 304 forms a seal with the substrate and excludes the plating solution from entering the peripheral region of the semiconductor substrate, as described elsewhere in this document. The lip seal 304 can include a projection 308 that extends upwardly and toward the substrate. The projections can be compressed and deformed to some extent to create a seal. The lip seal 304 has a first inner diameter that defines a perimeter for excluding the plating solution into the peripheral zone.
唇形密封組件302亦包括結構上整合至唇形密封304之一或多個接觸元件310。如上所述，接觸元件310用於在電鍍期間將電流供應至半導體基板。接觸元件310包括暴露部分312，暴露部分312用於界定比唇形密封304之第一內徑大之第二內徑，以避免干擾唇形密封組件302之密封性質。接觸元件310通常包括另一暴露部分313，暴露部分313用於形成與電流來源(例如電鍍抓斗之導電板316)之電連接。然而，其他連接方案亦係可能的。例如，接觸元件310可與可連接至導電板316之分配匯流排314互連。The lip seal assembly 302 also includes one or more contact elements 310 that are structurally integrated into the lip seal 304. As described above, the contact element 310 is used to supply current to the semiconductor substrate during electroplating. The contact element 310 includes an exposed portion 312 for defining a second inner diameter that is greater than the first inner diameter of the lip seal 304 to avoid interfering with the sealing properties of the lip seal assembly 302. Contact element 310 typically includes another exposed portion 313 for forming an electrical connection with a source of current, such as conductive plate 316 of the electroplated grab. However, other connection options are also possible. For example, contact element 310 can be interconnected with a distribution bus 314 that can be connected to conductive plate 316.
如上所述，一或多個接觸元件310至唇形密封304的整合係在唇形密封組件302之製造期間執行，並在組件之安裝及操作期間維持。可以多種方式來執行此整合。例如，可在接觸元件310上模製彈性材料。諸如電流分配匯流排314之其他元件亦可整合至組件，以改良組件302之剛性、傳導率及其他功能性。As noted above, the integration of one or more of the contact elements 310 to the lip seal 304 is performed during manufacture of the lip seal assembly 302 and is maintained during installation and operation of the assembly. This integration can be performed in a variety of ways. For example, an elastic material can be molded over the contact element 310. Other components, such as current distribution bus 314, may also be integrated into the assembly to improve the rigidity, conductivity, and other functionality of component 302.
圖3A中圖解之唇形密封組件302具有接觸元件310，接觸元件310具有位於兩個暴露部分312與313之間且連接兩個暴露部分之中間未暴露部分。此未暴露部分延伸通過彈性唇形密封304之主體，且在結構上整合於彈性唇形密封304之一表面下方而完全被彈性唇形密封圍繞。可(例如)藉由在接觸元件310之未暴露部分上模製彈性唇形密封304來形成此類型之唇形密封組件302。因為僅小部分的接觸元件310延伸至唇形密封組件302之表面而被暴露，故此種接觸元件可特別易於清潔。The lip seal assembly 302 illustrated in Figure 3A has a contact element 310 having an intermediate unexposed portion between the two exposed portions 312 and 313 and connecting the two exposed portions. This unexposed portion extends through the body of the resilient lip seal 304 and is structurally integrated beneath one surface of the elastomeric lip seal 304 and is completely surrounded by the elastomeric lip seal. This type of lip seal assembly 302 can be formed, for example, by molding an elastomeric lip seal 304 over an unexposed portion of contact element 310. Such contact elements can be particularly easy to clean because only a small portion of the contact elements 310 are exposed to the surface of the lip seal assembly 302.
圖3B圖解接觸元件322在彈性唇形密封324之表面上延伸，且不具有被唇形密封組件圍繞之中間區的另一實施例。在一些實施例中，可將中間區視為接觸元件之第三暴露部分，其結構上整合於彈性唇形密封之表面上，且位於接觸元件之前兩個暴露部分312及313之間，從而連接此兩個部分。可(例如)藉由將接觸元件322施壓至表面、或藉由將其模製至表面、或藉由將其膠合至表面、或藉由以其他方式將其附接至表面來組裝此實施例。無論接觸元件如何整合至彈性唇形密封，接觸元件形成與基板之電連接的點或表面皆優先地相對於唇形密封形成與基板之密封的點或表面而維持其對準。接觸元件及唇形密封之其他部分可相對於彼此移動。例如，接觸元件之形成與導電板之電連接的暴露部分可相對於唇形密封而移動。FIG. 3B illustrates another embodiment in which the contact element 322 extends over the surface of the resilient lip seal 324 and does not have an intermediate region surrounded by the lip seal assembly. In some embodiments, the intermediate region can be considered as a third exposed portion of the contact element that is structurally integrated onto the surface of the resilient lip seal and is located between the two exposed portions 312 and 313 prior to the contact element, thereby connecting These two parts. This implementation can be assembled, for example, by pressing contact element 322 to the surface, or by molding it to a surface, or by gluing it to a surface, or by otherwise attaching it to a surface. example. Regardless of how the contact elements are integrated into the elastomeric lip seal, the points or surfaces at which the contact elements form an electrical connection with the substrate preferentially maintain alignment with respect to the point or surface of the lip seal that forms a seal with the substrate. The contact elements and other portions of the lip seal are movable relative to each other. For example, the exposed portion of the contact element that forms an electrical connection with the conductive plate can move relative to the lip seal.
返回圖3A，該第一內徑界定周邊區，而該第二內徑界定接觸元件與基板之間的重疊。在某些實施例中，該第一內徑與第二內徑之間的差之量值為約0.5毫米(mm)或小於0.5毫米，此意謂接觸元件310之暴露部分312與電解質溶液分隔約0.25 mm或小於0.25 mm。此小之分隔允許具有相對小之周邊區，同時維持至基板之充分電連接。在某些此等實施例中，該第一內徑與第二內徑之間的差之量值為約0.4 mm或小於0.4 mm，或約0.3 mm或小於0.3 mm，或約0.2 mm或小於0.2 mm，或約0.1 mm或小於0.1 mm。在其他實施例中，此等直徑之間的差之量值可為約0.6 mm或小於0.6 mm，或約0.7 mm或小於0.7 mm，或約1 mm或小於1 mm。在某些實施例中，接觸元件經配置以傳導至少約30安培，或更具體而言，至少約60安培。接觸元件可包括複數指狀物，使得該等指狀物之每一接觸尖端相對於唇形密封之邊緣而不動。在相同或其他實施例中，一或多個接觸元件之暴露部分包括複數接觸點。該等接觸點可延伸而遠離彈性唇形密封之表面。在其他實施例中，一或多個接觸元件之暴露部分包括連續表面。具有形成保形接觸表面的可撓性接觸元件之唇形密封組件 Returning to Figure 3A, the first inner diameter defines a perimeter region and the second inner diameter defines an overlap between the contact element and the substrate. In some embodiments, the difference between the first inner diameter and the second inner diameter is about 0.5 millimeters (mm) or less than 0.5 millimeters, which means that the exposed portion 312 of the contact element 310 is separated from the electrolyte solution. About 0.25 mm or less than 0.25 mm. This small separation allows for a relatively small peripheral area while maintaining a sufficient electrical connection to the substrate. In some such embodiments, the difference between the first inner diameter and the second inner diameter is about 0.4 mm or less, or about 0.3 mm or less, or about 0.2 mm or less. 0.2 mm, or about 0.1 mm or less than 0.1 mm. In other embodiments, the magnitude of the difference between such diameters can be about 0.6 mm or less, or about 0.7 mm or less, or about 1 mm or less. In certain embodiments, the contact element is configured to conduct at least about 30 amps, or, more specifically, at least about 60 amps. The contact element can include a plurality of fingers such that each of the contact tips of the fingers does not move relative to the edge of the lip seal. In the same or other embodiments, the exposed portion of the one or more contact elements includes a plurality of contact points. The contact points can extend away from the surface of the elastomeric lip seal. In other embodiments, the exposed portion of the one or more contact elements comprises a continuous surface. Lip seal assembly having a flexible contact element forming a conformal contact surface
可藉由在基板密封於抓斗組件中以及隨後的電鍍期間，增大接觸元件與基板之間的接觸表面來顯著地改良對於基板之電連接。習知接觸元件(例如，圖2中所示之「指狀物」)經設計以僅與基板進行「點接觸」，點接觸具有相對小之接觸面積。當接觸指狀物之尖端碰到基板時，指狀物彎曲以提供與基板相抵之力。雖然此力可幫助稍微減小接觸電阻，但時常仍然存在足夠之接觸電阻而在電鍍期間產生問題。此外，隨時間推移，接觸指狀物可能因彎曲動作之許多重複而被損壞。The electrical connection to the substrate can be significantly improved by increasing the contact surface between the contact element and the substrate during sealing of the substrate in the grapple assembly and subsequent plating. Conventional contact elements (e.g., "fingers" shown in Figure 2) are designed to "point contact" only with the substrate, which has a relatively small contact area. When the tip of the contact finger hits the substrate, the fingers bend to provide a force against the substrate. Although this force can help to slightly reduce the contact resistance, there are often sufficient contact resistances to cause problems during plating. Furthermore, over time, the contact fingers may be damaged by many repetitions of the bending action.
本文中描述具有保形地定位於彈性唇形密封之上表面上的一或多個可撓性接觸元件之唇形密封組件。該等接觸元件經配置以在與半導體基板嚙合時撓曲，並在當半導體基板被唇形密封組件支撐、嚙合及密封時形成與基板介接之保形接觸表面。保形接觸表面在當以一種方式將基板抵著唇形密封施壓時產生，該方式類似於在基板與唇形密封之間產生密封之方式。因此，基板與接觸元件相抵的壓力，造成彈性材料(接觸元件設置於其上)壓縮並產生類彈簧的反作用力，該反作用力促使該接觸元件適型於基板之形狀。然而，儘管在一些實施例中，該彈性材料(接觸元件設置於其上)與形成密封界面的彈性材料呈連續，應通常將密封界面與保形接觸表面(形成在接觸元件與基板之間)區分開，即使兩個表面可相互鄰近地形成亦如此。同樣應注意的係，當本文敘述保形接觸元件「適型於」基板之形狀、或更具體地，「適型於」基板之斜邊區之形狀、或敘述電連接之形成包括接觸元件對於基板之形狀的「適型」時，應理解雖然這牽涉到調整接觸元件之形狀以與基板之形狀的若干部份匹配，但這並非意指將接觸元件之形狀整體調整成基板之形狀、或意旨整個基板之徑向邊緣輪廓被接觸元件之形狀所匹配；反而，僅意旨接觸元件之形狀的至少若干部分被改變以與基板之形狀的若干部分大致上匹配。A lip seal assembly having one or more flexible contact elements conformally positioned on the upper surface of the elastomeric lip seal is described herein. The contact elements are configured to flex when engaged with the semiconductor substrate and form a conformal contact surface that interfaces with the substrate when the semiconductor substrate is supported, engaged and sealed by the lip seal assembly. The conformal contact surface is created when the substrate is pressed against the lip seal in a manner similar to the manner in which a seal is created between the substrate and the lip seal. Therefore, the pressure at which the substrate abuts the contact member causes the elastic material (on which the contact member is placed) to compress and generate a spring-like reaction force which causes the contact member to conform to the shape of the substrate. However, although in some embodiments the elastomeric material (on which the contact elements are disposed) is continuous with the elastomeric material forming the sealing interface, the sealing interface and the conformal contact surface (formed between the contact member and the substrate) should generally be employed. The division is even if the two surfaces can be formed adjacent to each other. It should also be noted that when the conformal contact element is described as being "suitable" to the shape of the substrate, or more specifically, the shape of the beveled region of the substrate, or the formation of the electrical connection, including the contact element to the substrate In the "suitable" shape, it should be understood that although this involves adjusting the shape of the contact element to match portions of the shape of the substrate, this does not mean that the shape of the contact element is integrally adjusted to the shape of the substrate, or The radial edge profile of the entire substrate is matched by the shape of the contact elements; instead, only at least portions of the shape of the contact element are intended to be altered to substantially match portions of the shape of the substrate.
圖4A根據某些實施例圖解在將基板406定位及密封至唇形密封402上之前的唇形密封組件400，其具有定位於彈性唇形密封402之上表面上的可撓性接觸元件404。圖4B根據某些實施例圖解在基板406已被定位且用唇形密封402密封後之同一唇形密封組件400。具體而言，呈現當基板由唇形密封組件固持/嚙合時，可撓性接觸元件404撓曲且在與基板406之界面處形成保形接觸表面。可撓性接觸元件404與基板406之間的電界面可延伸在基板之(平坦的)前緣表面及/或基板之斜邊表面上。總體上，藉由在與基板406之界面處提供可撓性接觸元件404之保形接觸表面來形成較大之接觸界面區域。4A illustrates a lip seal assembly 400 having a flexible contact element 404 positioned on an upper surface of the elastomeric lip seal 402 prior to positioning and sealing the substrate 406 onto the lip seal 402, in accordance with certain embodiments. 4B illustrates the same lip seal assembly 400 after the substrate 406 has been positioned and sealed with the lip seal 402, in accordance with certain embodiments. In particular, it appears that when the substrate is held/engaged by the lip seal assembly, the flexible contact element 404 flexes and forms a conformal contact surface at the interface with the substrate 406. The electrical interface between the flexible contact element 404 and the substrate 406 can extend over the (flat) leading edge surface of the substrate and/or the beveled surface of the substrate. In general, a larger contact interface region is formed by providing a conformal contact surface of the flexible contact element 404 at the interface with the substrate 406.
可撓性接觸元件404之保形性質在與基板之界面處係重要的，同時可撓性接觸元件404之其餘部分亦可相對於唇形密封402保形。例如，可撓性接觸元件404可保形地沿著唇形密封之表面延伸。在其他實施例中，可撓性接觸元件404之其餘部分可由其他(例如非保形)材料製成，及/或具有不同(例如非保形)配置。因此，在一些實施例中，一或多個可撓性接觸元件可具有不配置成當基板被唇形密封組件嚙合時接觸基板的部分，且此非接觸部分可包含適型材料，或其可包含非適型材料。The conformal nature of the flexible contact element 404 is important at the interface with the substrate while the remainder of the flexible contact element 404 can also be conformed relative to the lip seal 402. For example, the flexible contact element 404 can conformally extend along the surface of the lip seal. In other embodiments, the remainder of the flexible contact element 404 can be made of other (eg, non-conformal) materials, and/or have a different (eg, non-conformal) configuration. Thus, in some embodiments, one or more of the flexible contact elements can have portions that are not configured to contact the substrate when the substrate is engaged by the lip seal assembly, and such non-contact portions can comprise a conformable material, or Contains non-compliant materials.
此外，應注意，雖然保形接觸表面可在可撓性接觸元件404與基板406之間形成連續界面，但形成連續界面並非必需。例如，在一些實施例中，保形接觸表面具有間隙，從而與半導體基板形成非連續界面。具體而言，由包含許多複數導線尖端及/或一導線網(設置在彈性唇形密封之表面上)的可撓性接觸元件404可形成非連續保形接觸表面。即使非連續，在唇形密封於抓斗之閉合期間變形時，保形接觸表面仍會遵循唇形密封之形狀。Moreover, it should be noted that while the conformal contact surface can form a continuous interface between the flexible contact element 404 and the substrate 406, it is not necessary to form a continuous interface. For example, in some embodiments, the conformal contact surface has a gap to form a discontinuous interface with the semiconductor substrate. In particular, the non-continuous conformal contact surface can be formed by a flexible contact element 404 comprising a plurality of plurality of wire tips and/or a wire mesh (disposed on the surface of the elastomeric lip seal). Even if discontinuous, the conformal contact surface will follow the shape of the lip seal when the lip seal is deformed during closure of the grapple.
可撓性接觸元件404可附接至彈性唇形密封之上表面。例如，可撓性接觸元件404可被施壓、膠合、模製或以其他方式附接至該表面，如上參看圖3A及圖3B所述(雖然其不在形成保形接觸表面之可撓性接觸元件之特定情況下)。在其他實施例中，可撓性接觸元件404可定位於彈性唇形密封之上表面上，而不在兩者之間提供任何特定之接合特徵。在任一情況下，由半導體基板施加於可撓性接觸元件404上的力(當抓斗閉合時) 造成接觸元件下方的彈性體壓縮，而該彈性體提供類彈簧的反作用力，該反作用力促成可撓性接觸元件對於基板形狀之保形性。The flexible contact element 404 can be attached to the upper surface of the resilient lip seal. For example, the flexible contact element 404 can be pressed, glued, molded, or otherwise attached to the surface, as described above with respect to Figures 3A and 3B (although it is not in flexible contact forming a conformal contact surface) In the specific case of the component). In other embodiments, the flexible contact element 404 can be positioned on the upper surface of the resilient lip seal without providing any particular engagement features therebetween. In either case, the force exerted by the semiconductor substrate on the flexible contact element 404 (when the grab is closed) causes compression of the elastomer below the contact element, while the elastomer provides a spring-like reaction that contributes to the reaction. The shape retention of the flexible contact element with respect to the shape of the substrate.
此外，雖然可撓性接觸元件404與基板406介接之部分(形成保形接觸表面)為暴露表面，但可撓性接觸元件404之其他部分可未暴露，例如，以一種稍微類似於圖3B所繪之整合式(但非保形的)唇形密封組件之方式而整合於彈性唇形密封之表面下方。Moreover, although the portion of the flexible contact element 404 that interfaces with the substrate 406 (forming the conformal contact surface) is the exposed surface, other portions of the flexible contact element 404 may not be exposed, for example, in a manner similar to FIG. 3B. The integrated (but non-conformal) lip seal assembly is integrated into the underside of the surface of the elastomeric lip seal.
在某些實施例中，可撓性接觸元件404包括沈積在彈性唇形密封之上表面上的傳導性沈積物之傳導性層。可使用化學氣相沈積(CVD)及/或物理氣相沈積(PVD)及/或電鍍來形成/沈積傳導性沈積物之傳導性層。在一些實施例中，可撓性接觸元件404可由導電性彈性材料製成。基板對準唇形密封 In certain embodiments, the flexible contact element 404 includes a conductive layer of conductive deposit deposited on the upper surface of the elastomeric lip seal. Conductive layers of conductive deposits may be formed/deposited using chemical vapor deposition (CVD) and/or physical vapor deposition (PVD) and/or electroplating. In some embodiments, the flexible contact element 404 can be made of a conductive, resilient material. Substrate alignment lip seal
如前文解釋，基板之排除電鍍溶液之周邊區需要小，此需要在閉合及密封抓斗前仔細且精確地對準半導體基板。不對準可能一方面造成滲漏，及/或另一方面造成基板工作區域之不必要的覆蓋/阻擋。嚴苛的基板直徑容差可能造成對準期間之額外困難。一些對準可由傳送機制(例如取決於機器手搬運機制之準確性)及藉由使用定位在抓斗之杯體的側壁的對準特徵(諸如緩衝器(snubber))來提供。然而，需要將傳送機制精確地安裝且在安裝期間相對於杯體對準(亦即，關於其他元件之相對位置「教示」)，以提供基板之精確且重複定位。此機器手教示及對準過程執行起來相當困難，使用大量勞力，且需要高技術人員。 此外，因為在唇形密封與緩衝器之間定位了許多零件，緩衝器特徵難以安裝且而易於具有大之累計容差。As explained above, the peripheral region of the substrate from which the plating solution is excluded needs to be small, which requires careful and precise alignment of the semiconductor substrate before closing and sealing the grab. Misalignment can cause leakage on the one hand and/or unnecessary coverage/blocking of the working area of the substrate on the other hand. Severe substrate diameter tolerances can cause additional difficulties during alignment. Some alignment may be provided by a transfer mechanism (e.g., depending on the accuracy of the robotic handling mechanism) and by using alignment features (such as snubbers) positioned on the sidewalls of the cup of the grab. However, the transport mechanism needs to be accurately mounted and aligned relative to the cup during installation (i.e., "teaching" relative to other components) to provide accurate and repeatable positioning of the substrate. This robotic teaching and alignment process is quite difficult to perform, uses a lot of labor, and requires high technicians. Furthermore, because many parts are positioned between the lip seal and the bumper, the bumper features are difficult to install and tend to have large cumulative tolerances.
因此，本文中揭示唇形密封，其不僅用於在抓斗中支撐及密封基板，且亦用於在密封前將基板對準於抓斗中。現將參照圖5A至圖5C來描述此種唇形密封之各種特徵。具體而言，圖5A為根據某些實施例之具有唇形密封502之抓斗部分500的剖面示意圖解，在壓縮唇形密封502之一部分前，唇形密封502支撐基板509。唇形密封502包括可撓性彈性支撐邊緣503，可撓性彈性支撐邊緣503包含密封凸出部504。密封凸出部504經配置以嚙合半導體基板509，從而提供支撐且形成密封。密封凸出部504界定用於排除電鍍溶液之周界，且具有第一內徑(見圖5A)，該第一內徑界定排除的周界。應注意，歸因於密封凸出部504之變形，當將基板抵著彈性唇形密封來密封時，該周界及/或第一內徑可稍微改變。Accordingly, a lip seal is disclosed herein that not only serves to support and seal the substrate in the grapple, but is also used to align the substrate in the grapple prior to sealing. Various features of such a lip seal will now be described with reference to Figures 5A-5C. In particular, FIG. 5A is a schematic cross-sectional view of a grab portion 500 having a lip seal 502 that supports a substrate 509 prior to compressing a portion of the lip seal 502, in accordance with some embodiments. The lip seal 502 includes a flexible resilient support edge 503 that includes a sealing projection 504. Sealing projections 504 are configured to engage semiconductor substrate 509 to provide support and form a seal. Sealing projection 504 defines a perimeter for excluding the plating solution and has a first inner diameter (see FIG. 5A) that defines an excluded perimeter. It should be noted that due to the deformation of the sealing projection 504, the perimeter and/or the first inner diameter may vary slightly when the substrate is sealed against the elastic lip seal.
唇形密封502亦包含位於可撓性彈性支撐邊緣503上方之可撓性彈性上部部分505。可撓性彈性上部部分505可包括經配置以被壓縮之頂表面507，且亦包括內側表面506。內側表面506可相對於密封凸出部504位於外側(意謂內側表面506比密封凸出部504位置遠離由彈性唇形密封固持之半導體基板之中心)，且經配置以當頂表面507被電鍍抓斗之另一元件壓縮時向內(朝向被固持之半導體基板之中心)移動。在一些實施例中，內側表面之至少一部分經配置以向內移動至少約0.1 mm，或至少約0.2 mm，或 至少約0.3 mm，或至少約0.4 mm，或至少約0.5 mm。此向內運動可使唇形密封之內側表面506接觸半導體基板之擱置在密封凸出部504上之邊緣，從而朝向唇形密封之中心推動基板，且因此使其對準於電鍍抓斗內。在一些實施例中，可撓性彈性上部部分505界定比第一內徑(如上所述)大之第二內徑(見圖5A)。當未壓縮頂表面507時，第二內徑比半導體基板509之直徑大，使得可藉由將半導體基板509降低而通過可撓性彈性上部部分505並將其置放在可撓性彈性支撐邊緣503之密封凸出部504上，來將其裝載至抓斗內。The lip seal 502 also includes a flexible, resilient upper portion 505 above the flexible resilient support edge 503. The flexible, resilient upper portion 505 can include a top surface 507 that is configured to be compressed, and also includes an inside surface 506. The inner side surface 506 can be located on the outer side relative to the sealing projection 504 (meaning the inner side surface 506 is positioned away from the center of the semiconductor substrate held by the resilient lip seal than the sealing projection 504) and is configured to be plated when the top surface 507 is plated The other element of the grab moves inward (toward the center of the held semiconductor substrate) when compressed. In some embodiments, at least a portion of the medial surface is configured to move inwardly by at least about 0.1 mm, or at least about 0.2 mm, or at least about 0.3 mm, or at least about 0.4 mm, or at least about 0.5 mm. This inward movement causes the inside surface 506 of the lip seal to contact the edge of the semiconductor substrate resting on the sealing projection 504, thereby pushing the substrate toward the center of the lip seal and thereby aligning it within the plating grab. In some embodiments, the flexible, resilient upper portion 505 defines a second inner diameter that is larger than the first inner diameter (as described above) (see Figure 5A). When the top surface 507 is uncompressed, the second inner diameter is larger than the diameter of the semiconductor substrate 509, so that the flexible elastic upper portion 505 can be passed through the flexible elastic upper portion 505 and placed on the flexible elastic support edge by lowering the semiconductor substrate 509 The sealing projection 504 of 503 is loaded into the grab.
唇形密封502亦可具有整合式或以其他方式附接之接觸元件508。在其他實施例中，接觸元件508可為分離之元件。無論如何，不管其是否為分離之元件，若接觸元件508提供於唇形密封502之內側表面506上，則接觸元件508亦可涉及於基板之對準中。因此，在此等範例中，接觸元件508若存在，則可被視為內側表面506之一部分。The lip seal 502 can also have an integrated or otherwise attached contact element 508. In other embodiments, contact element 508 can be a separate component. Regardless, whether or not it is a separate component, if contact element 508 is provided on inner side surface 506 of lip seal 502, contact element 508 can also be involved in the alignment of the substrate. Thus, in these examples, contact element 508, if present, can be considered a portion of inner side surface 506.
可以多種方式完成彈性上部部分505之頂表面507之壓縮(以便將半導體基板對準且密封於電鍍抓斗內)。例如，頂表面507可由抓斗之錐體或某些其他元件之一部分壓縮。圖5B為根據某些實施例之緊接在由錐體510壓縮之前的圖5A所示之同一抓斗部分之示意圖解。若使用錐體510對上部部分505之頂表面507施壓，以使上部部分變形，並且對基板509施壓，以將基板509抵著密封凸出部504而密封，則錐體可具有兩個表面511及512，此兩個表面按特定方式相對於彼此偏移。具體而言，第一表面511經配置以對上部部分505之頂表面507施壓，而第二表面512經配置以對基板509施壓。通常在將基板509抵著密封凸出部504而密封之前對準基板509。因此，在第二表面512對基板509施壓前，第一表面511需要對頂表面507施壓。因而，當第一表面511接觸頂表面507時，在第二表面512與基板509之間可存在間隙，如在圖5B中所示。此間隙可取決於上部部分505之必要變形來提供對準。Compression of the top surface 507 of the resilient upper portion 505 can be accomplished in a variety of ways (to align and seal the semiconductor substrate within the plating grab). For example, the top surface 507 can be partially compressed by one of the cones of the grab or some other element. FIG. 5B is a schematic illustration of the same grapple portion of FIG. 5A immediately prior to compression by cone 510, in accordance with some embodiments. If the top surface 507 of the upper portion 505 is pressed using the cone 510 to deform the upper portion and the substrate 509 is pressed to seal the substrate 509 against the sealing projection 504, the cone may have two Surfaces 511 and 512 are offset relative to one another in a particular manner. In particular, the first surface 511 is configured to press the top surface 507 of the upper portion 505 while the second surface 512 is configured to press the substrate 509. The substrate 509 is typically aligned prior to sealing the substrate 509 against the sealing projections 504. Therefore, the first surface 511 needs to press the top surface 507 before the second surface 512 presses the substrate 509. Thus, when the first surface 511 contacts the top surface 507, there may be a gap between the second surface 512 and the substrate 509, as shown in Figure 5B. This gap may provide alignment depending on the necessary deformation of the upper portion 505.
在其他實施例中，頂表面507及基板509被抓斗之具有獨立控制之垂直定位的不同元件施壓。此配置可允許在對基板509施壓前獨立地控制上部部分505之變形。例如，一些基板可具有比其他者大之直徑。在某些實施例中，此等較大基板之對準可能需要且甚至要求比較小基板更少之變形，此係因為在較大基板與內側表面506之間存在較少初始間隙。In other embodiments, the top surface 507 and the substrate 509 are pressurized by different elements of the grab that have independently controlled vertical positioning. This configuration may allow the deformation of the upper portion 505 to be independently controlled before the substrate 509 is pressed. For example, some substrates may have a larger diameter than others. In some embodiments, alignment of such larger substrates may require and even require less deformation of the smaller substrate because there is less initial gap between the larger substrate and the inner side surface 506.
圖5C為根據某些實施例，密封抓斗後的圖5A及圖5B所示之同一抓斗部分之示意圖解。由錐體510之第一表面511(或一些其他壓縮元件)所進行之上部部分505之頂表面507的壓縮，造成上部部分505之變形，使得內側表面506向內移動，從而接觸並以便將半導體基板509對準於抓斗中。雖然圖5C圖解抓斗之小部分之剖面，但一般熟習此技術者應瞭解，此對準過程同時發生在基板509之全周界之周圍。在某些實施例中，內側表面506之一部分經配置以當壓縮頂表面507時朝向唇形密封之中心移動至少約0.1 mm，或至少約0.2 mm，或至少約0.3 mm，或至少約0.4 mm，或至少約0.5 mm。將基板對準且密封於抓斗中的方法 Figure 5C is a schematic illustration of the same grapple portion of Figures 5A and 5B after sealing the grapple, in accordance with some embodiments. Compression of the top surface 507 of the upper portion 505 by the first surface 511 of the cone 510 (or some other compression element) causes deformation of the upper portion 505 such that the inner surface 506 moves inwardly to contact and thereby contact the semiconductor The substrate 509 is aligned in the grab. Although FIG. 5C illustrates a cross-section of a small portion of the grab, it will be understood by those skilled in the art that this alignment process occurs simultaneously around the entire perimeter of the substrate 509. In certain embodiments, one portion of the medial surface 506 is configured to move at least about 0.1 mm, or at least about 0.2 mm, or at least about 0.3 mm, or at least about 0.4 mm toward the center of the lip seal when compressing the top surface 507. , or at least about 0.5 mm. Method of aligning a substrate and sealing it in a grab
本文亦揭露將半導體基板對準且密封於具有彈性唇形密封之電鍍抓斗中的方法。圖6之流程圖說明這些方法中之一些。例如，一些實施例方法涉及打開抓斗(區塊602)，將基板提供至電鍍抓斗(區塊604)，將基板降低以通過唇形密封之上部部分並到達唇形密封之密封凸出部上(區塊606)，及壓縮唇形密封之上部部分之頂表面以對準基板(區塊608)。在一些實施例中，在操作608期間壓縮彈性唇形密封之上部部分之頂表面，使上部部分之內側表面接觸半導體基板，並推動基板，從而使其對準於抓斗中。Also disclosed herein is a method of aligning and sealing a semiconductor substrate into an electroplated grab with an elastomeric lip seal. The flow chart of Figure 6 illustrates some of these methods. For example, some embodiment methods involve opening a grapple (block 602), providing a substrate to an electroplating grapple (block 604), lowering the substrate to pass the upper portion of the lip seal and reaching the sealing projection of the lip seal Upper (block 606), and the top surface of the upper portion of the compression lip seal to align the substrate (block 608). In some embodiments, the top surface of the upper portion of the resilient lip seal is compressed during operation 608 such that the inner surface of the upper portion contacts the semiconductor substrate and pushes the substrate to align it in the grab.
在一些實施例中，在操作608期間對準半導體基板後，該方法繼續進行在操作610中對半導體基板施壓以在密封凸出部與半導體基板之間形成密封。在某些實施例中，在對半導體基板施壓之期間，繼續壓縮該頂表面。例如，在某些此等實施例中，壓縮頂表面以及對半導體基板施壓可由抓斗之錐體的兩個不同表面來執行。因此，錐體之第一表面對頂表面施壓以將其壓縮，而錐體之第二表面對基板施壓以與彈性唇形密封形成密封。在其他實施例中，壓縮頂表面以及對半導體基板施壓係由抓斗之兩個不同元件來獨立地執行。抓斗之此兩個按壓元件通常可相對於彼此獨立地移動，因此允許一旦基板被另一個按壓元件施壓而抵著唇形密封來密封時，則頂表面之壓縮停止。 此外，藉由獨立地改變與半導體基板相關的按壓元件施加於其上之按壓力，可基於半導體基板之直徑來調整頂表面之壓縮程度。In some embodiments, after aligning the semiconductor substrate during operation 608, the method continues by applying a pressure to the semiconductor substrate in operation 610 to form a seal between the sealing projection and the semiconductor substrate. In some embodiments, the top surface continues to be compressed during application of the semiconductor substrate. For example, in some such embodiments, compressing the top surface and applying pressure to the semiconductor substrate can be performed by two different surfaces of the cone of the grab. Thus, the first surface of the cone presses the top surface to compress it, and the second surface of the cone presses the substrate to form a seal with the resilient lip seal. In other embodiments, compressing the top surface and applying pressure to the semiconductor substrate are performed independently by two different components of the grapple. The two pressing elements of the grapple are generally movable independently of each other, thus allowing compression of the top surface to cease once the substrate is pressed against the lip seal by another pressing element. Further, by independently changing the pressing force applied to the pressing member associated with the semiconductor substrate, the degree of compression of the top surface can be adjusted based on the diameter of the semiconductor substrate.
此等操作可為較大電鍍過程之部分，該較大電鍍過程亦描繪於圖6之流程圖並簡要描述如下。Such operations may be part of a larger electroplating process, which is also depicted in the flow chart of Figure 6 and briefly described below.
首先，清潔並乾燥抓斗之唇形密封及接觸區域。打開抓斗(區塊602)，並將基板裝載至抓斗內。在某些實施例中，接觸尖端稍坐落於密封唇之平面上方，且在此情況下，基板由在基板周邊周圍的接觸尖端的陣列所支撐。接著藉由向下移動錐體而閉合且密封抓斗。在此閉合操作期間，根據以上描述之各種實施例建立電接觸及密封。另外，可將接觸之底部角落抵著彈性唇形密封之底座而向下施力，此在尖端與晶圓之前側之間產生額外的力。可稍壓縮密封唇以確保在全周界周圍之密封。在一些實施例中，當最初將基板定位至杯體內時，僅密封唇與前表面接觸。在此範例中，在密封唇之壓縮期間建立尖端與前表面之間的電接觸。First, clean and dry the lip seal and contact area of the grab. The grapple is opened (block 602) and the substrate is loaded into the grapple. In some embodiments, the contact tip sits slightly above the plane of the sealing lip, and in this case the substrate is supported by an array of contact tips around the perimeter of the substrate. The grab is then closed and sealed by moving the cone down. During this closing operation, electrical contacts and seals are established in accordance with various embodiments described above. Alternatively, the bottom corner of the contact can be biased downward against the base of the resilient lip seal, which creates additional force between the tip and the front side of the wafer. The sealing lip can be slightly compressed to ensure a seal around the entire perimeter. In some embodiments, when the substrate is initially positioned into the cup, only the sealing lip is in contact with the front surface. In this example, electrical contact between the tip and the front surface is established during compression of the sealing lip.
一旦建立了密封及電接觸，則將載有基板之抓斗浸沒至電鍍槽內並在槽中電鍍，同時固持在抓斗中(區塊612)。在此操作中使用之銅電鍍溶液之典型組成包含濃度範圍約0.5 g/L-80 g/L、更具體而言約5 g/L-60 g/L、且甚至更具體而言約18 g/L-55 g/L之銅離子，及濃度約0.1 g/L-400 g/L之硫酸。低酸銅電鍍溶液通常含有約5 g/L-10 g/L之硫酸。中等及高酸溶液分別含有約50 g/L-90 g/L及150 g/L-180 g/L之硫酸。氯離子之濃度可為約1 mg/L-100 mg/L。可使用許多銅電鍍有機添加劑，諸如，Enthone Viaform、Viaform NexT、Viaform Extreme(可購自美國康乃狄克州西黑文(West Haven,CT)之樂思化學有限公司(Enthone Corporation))或熟習此技術者已知之其他加速劑、抑制劑及勻塗劑。電鍍操作之實例更詳細地描述於2006年11月28日申請之美國專利申請案第11/564,222號中，為了所有目的，但尤其是為了描述電鍍操作之目的，此申請案在此以引用之方式而全文併入本文中。一旦電鍍完成，並且已將適當量之材料沈積於基板之前表面上，則將基板自電鍍槽中移開。接著旋轉基板及抓斗以移除抓斗表面上之大部分殘餘電解質，殘餘電解質歸因於表面張力及黏著力而留在彼處。接著沖洗抓斗，同時繼續旋轉以儘可能地稀釋並沖刷抓斗及基板表面所乘載之電解質流體。接著在關掉沖洗液體達一定時間(通常至少約2秒)之情況下旋轉基板，以移除一些剩餘之沖洗物。此過程可繼續進行打開抓斗(區塊614)及移除處理過之基板(區塊616)。針對新的晶圓基板可重複多次操作區塊604至616，如圖6中所指出。剛性提高、密封元件製造更精確、且累計容差降低之杯體組件 Once the seal and electrical contact are established, the substrate carrying the grab is immersed in the plating bath and plated in the bath while holding in the grab (block 612). A typical composition of the copper plating solution used in this operation comprises a concentration ranging from about 0.5 g/L to 80 g/L, more specifically from about 5 g/L to 60 g/L, and even more specifically about 18 g. /L-55 g / L of copper ions, and a concentration of about 0.1 g / L -400 g / L of sulfuric acid. The low acid copper plating solution typically contains from about 5 g/L to 10 g/L of sulfuric acid. The medium and high acid solutions contain about 50 g/L to 90 g/L and 150 g/L to 180 g/L of sulfuric acid, respectively. The concentration of chloride ions can range from about 1 mg/L to 100 mg/L. Many copper plating organic additives can be used, such as Enthone Viaform, Viaform NexT, Viaform Extreme (available from Enthone Corporation, West Haven, CT, USA) or familiar with Other accelerators, inhibitors, and leveling agents known to those skilled in the art. An example of an electroplating operation is described in more detail in U.S. Patent Application Serial No. 11/564,222, filed on Nov. 28, 2006, the entire disclosure of The manner is fully incorporated herein. Once the plating is complete and an appropriate amount of material has been deposited on the front surface of the substrate, the substrate is removed from the plating bath. The substrate and the grab are then rotated to remove most of the residual electrolyte on the surface of the grab, leaving the residual electrolyte in place due to surface tension and adhesion. The grab is then rinsed while continuing to rotate to dilute and flush as much of the electrolyte fluid as possible on the grab and substrate surfaces. The substrate is then rotated while the rinse liquid is turned off for a certain period of time (typically at least about 2 seconds) to remove some of the remaining rinse. This process can continue with opening the grab (block 614) and removing the processed substrate (block 616). The blocks 604 through 616 can be repeated multiple times for a new wafer substrate, as indicated in FIG. Cup assembly with improved rigidity, more precise sealing element manufacturing, and reduced cumulative tolerance
通常，杯體與錐體電鍍抓斗設計係利用與該抓斗之其他元件分離地製造的彈性唇形密封，亦即，該唇形密封通常被製造為一個分離的元件，之後當為操作性使用而組裝時與抓斗結合。主要地，這係因為其他的抓斗元件通常並非由彈性材料構成，而是由金屬或硬塑膠製成的堅固件，所以針對該等抓斗元件一般會使用分離的模製或製造過程。然而，因為脣形密封係由可撓性彈性材料製成，且因為其薄的(且可能脆的)形狀(例如請見圖2，如上下文所述)，所以脣形密封的模製可能比堅固的抓斗元件之製造較不精確。此外，組裝過程(將脣形密封安裝於杯體之底部(「杯底」))可能導致脣形密封的形狀與尺寸的額外變化，並且通過「累計」容差而產生額外的變異性。每一晶圓基板的邊際利潤通常直接取決於基板之可利用表面面積；因此晶圓之邊緣排除區的尺寸(由密封之徑向位置界定，而該密封由唇形密封與基板相抵而形成)直接地影響與每一晶圓基板相關的「底線」利潤率。然而，唇形密封必須在基板邊緣之足夠內側處將基板表面的周邊區(其用於形成與電鍍電流來源的電連接)密封，使得唇形密封之製造與累計容差的變異性不會不利地影響唇形密封之密封能力的可靠度。因此，於合理可行之範圍內精準地設計並製造彈性密封元件係重要的。Typically, the cup and cone plating grapple design utilizes an elastomeric lip seal that is fabricated separately from the other components of the grapple, that is, the lip seal is typically fabricated as a separate component and then as operational. Used in combination with the grab when assembled. Primarily, this is because separate gripping elements are typically not constructed of resilient materials, but rather are rigid pieces made of metal or hard plastic, so separate molding or manufacturing processes are typically employed for such grab elements. However, because the lip seal is made of a flexible elastomeric material, and because of its thin (and possibly brittle) shape (see, for example, see Figure 2, as described above and below), the lip seal may be molded more than The manufacture of robust grab elements is less precise. In addition, the assembly process (mounting the lip seal to the bottom of the cup ("bottom") may result in additional variations in the shape and size of the lip seal and create additional variability by "accumulating" tolerances. The profit margin of each wafer substrate is usually directly dependent on the available surface area of the substrate; therefore, the size of the edge exclusion region of the wafer (defined by the radial position of the seal formed by the lip seal against the substrate) Directly affects the "bottom line" margin associated with each wafer substrate. However, the lip seal must seal the peripheral region of the substrate surface (which is used to form an electrical connection to the source of the plating current) at a sufficient inner side of the edge of the substrate so that the variability in the manufacture and cumulative tolerance of the lip seal does not adversely The ground affects the reliability of the sealing ability of the lip seal. Therefore, it is important to accurately design and manufacture elastic sealing elements within reasonable and feasible limits.
藉由與電鍍抓斗設計之杯體組件的杯底元件之製造結合，來製造彈性密封元件，可改良目前的杯體組件與密封元件製造方法。換句話說，以一種整合的方式來製造杯體組件(具體而言為杯底元件與彈性密封元件)係有利的。達成的一方式為將彈性密封元件直接地模製於杯底元件(杯底元件上、中等)。若彈性密封元件實體上較小(例如，與較傳統的設計之徑向地向外延伸朝杯體組件延伸過遠相比，其具有較靠近(local to)晶圓邊緣區的徑向輪廓)，則該方式尤其有效，因為尺寸較小的密封元件易於形成在杯底元件之位置上。然而，亦應注意的係，在一些實施例中，尺寸較小的彈性密封元件允許以精準控制之方式經由下列方式而與杯底一起整合式製造，以便在彈性密封元件非直接地模製於杯底元件時仍達到上述之益處:接合、膠合、以附著劑附著、或以其他方式將密封元件附加於杯底元件。在任一情況下，彈性密封元件(具有縮小的徑向輪廓)與杯底元件一起之整合式製造，使得彈性密封元件得以更精準地製造並定位在杯底中，而因此相對於其他設計，縮小晶圓基板之邊緣排除區的尺寸。The manufacture of the elastomeric sealing element by combining the manufacture of the cup bottom element of the cup assembly of the electroplated grab design improves the current method of manufacturing the cup assembly and sealing element. In other words, it is advantageous to manufacture the cup assembly, in particular the cup bottom element and the elastic sealing element, in an integrated manner. One way to achieve this is to mold the elastomeric sealing element directly onto the cup bottom element (the cup bottom element, medium). If the elastomeric sealing element is physically smaller (e.g., it has a radial profile that is closer to the edge region of the wafer than if the radially extending outwardly of the more conventional design extends too far toward the cup assembly) This mode is particularly effective because a smaller-sized sealing member is easily formed at the position of the cup bottom member. However, it should also be noted that in some embodiments, the smaller size elastomeric sealing element allows for integrated manufacturing with the cup bottom in a precisely controlled manner in such a way that the elastomeric sealing element is not directly molded in the elastomeric sealing element. The benefits of the above are still achieved when the cup bottom element is joined, glued, adhered with an adhesive, or otherwise attached to the cup bottom element. In either case, the elastomeric sealing element (with a reduced radial profile) is integrated with the cup bottom element, allowing the elastomeric sealing element to be more precisely manufactured and positioned in the cup bottom, thus reducing it relative to other designs The size of the edge exclusion area of the wafer substrate.
以與杯底一起的整合方式來製造的彈性密封元件亦可應用與常用於其他杯體組件設計中者不同的基板電接觸元件。例如，使用經分離地製造的唇形密封之杯體組件可應用由硬化金屬片(例如約0.0005至0.005英吋厚)製成的接觸指狀物作為接觸元件，當抓斗閉合時，接觸指狀物撓曲並與基板形成點或線電接觸。此種接觸件可具有在接觸末端的「L」形狀，且「L」形狀可作為懸臂。此種實施例之一範例示意地圖解於圖2中。圖2呈現接觸指狀物208，其預備以在降低錐體203(即抓斗閉合)時，撓曲並與所顯示之基板形成點或線電接觸。然而，接觸指狀物(如圖2中的接觸指狀物208)之撓曲可能使該者與基板一起形成之電連接的點或線產生徑向變化。變化亦可起因於圖2所示之電鍍抓斗設計的多種元件之間的累計容差，該變化在於:密封唇212之製造、密封唇212在杯體201中之定位、接觸指狀物208在密封唇212上的方向、以及接觸指狀物208接觸基板之撓曲。Elastomeric sealing elements fabricated in an integrated manner with the cup bottom can also be applied to substrate electrical contact elements that are different from those commonly used in other cup assembly designs. For example, a cup member made of a separately manufactured lip seal can be used as a contact element made of a hardened metal sheet (for example, about 0.0005 to 0.005 inch thick), and when the grab is closed, the contact finger The material deflects and forms a point or line contact with the substrate. Such a contact member may have an "L" shape at the end of the contact, and the "L" shape may serve as a cantilever. An example of such an embodiment is schematically illustrated in Figure 2. 2 presents contact fingers 208 that are prepared to flex and form electrical or electrical contact with the displayed substrate as the cone 203 is lowered (ie, the grab is closed). However, the deflection of the contact fingers (such as contact fingers 208 in FIG. 2) may cause a radial change in the point or line of electrical connection that the person forms with the substrate. The variation may also result from the cumulative tolerance between the various components of the electroplated grab design shown in Figure 2, which is the manufacture of the sealing lip 212, the positioning of the sealing lip 212 in the cup 201, and the contact fingers 208. The direction on the sealing lip 212 and the contact fingers 208 contact the deflection of the substrate.
本文揭露之具有整合式彈性密封元件之杯體組件可應用屬於不同種類之具有不同特徵的電接觸元件。取代由硬化金屬片製成且歪曲成懸臂的「L」形接觸指狀物(如圖2所繪)，這些杯體組件可應用大致上平坦的接觸元件，其由非硬化、薄且平坦的片狀金屬材料製成，並設置在一部分的彈性密封元件上方。此種電接觸元件可夠薄且夠軟/具有可撓性，而使其足以在當被錐體抵著位於其下方之彈性密封元件而施壓時，與來自基板之壓力相抵而稍微變形。在一些實施例中，當接觸元件被夾在基板與密封元件之間時，受到來自基板之此種壓力，該接觸元件可變形到甚至適型(或稍微適型)於基板之形狀的程度。在一些實施例中，軟的可撓性片狀金屬接觸件可足夠地變形以適型於晶圓之斜邊區。因此，電接觸之作用力係藉由位於接觸元件下方的彈性密封元件之壓縮來提供，而非藉由硬化片狀金屬(如圖2所示之懸臂式接觸指狀物設計)之彈簧力。The cup assembly with integrated elastic sealing elements disclosed herein can be applied to different types of electrical contact elements having different characteristics. Instead of "L" shaped contact fingers (as depicted in Figure 2) made of hardened sheet metal and twisted into a cantilever, these cup assemblies can employ substantially flat contact elements that are non-hardened, thin and flat Made of sheet metal material and placed over a portion of the elastomeric sealing element. Such an electrical contact element can be thin and flexible/flexible enough to deform slightly against the pressure from the substrate when pressed by the cone against the resilient sealing element located beneath it. In some embodiments, when the contact element is sandwiched between the substrate and the sealing element, it is subjected to such pressure from the substrate that the deformable element can be deformed to an extent that is even conformable (or slightly conformable) to the shape of the substrate. In some embodiments, the soft flexible sheet metal contact may be sufficiently deformed to conform to the beveled region of the wafer. Thus, the force of the electrical contact is provided by compression of the resilient sealing element located beneath the contact element, rather than by the spring force of the sheet metal (such as the cantilevered contact finger design shown in Figure 2).
此種具有這些與多種其他特徵之杯體組件的一範例示意地表示於圖7A到圖7I中。所繪之杯體組件700包括可撓性且平坦的電接觸元件705，其可適型於基板之邊緣(例如晶圓基板之斜邊區)的形狀。在圖式中所示之電接觸元件係設置在整合於杯底元件701的彈性密封元件703上。如上所述，可在杯體組件之製造期間，將該彈性密封元件模製於該杯底元件中(或杯底元件當中、或杯底元件之上等)，或以其他方式接合/附加至杯底元件。這些杯體組件設計因此具有不同於前述之圖2-5所示之設計的某些特徵，且可將參考(並呈現於)圖7A到7I所述之設計視為上述之杯體組件設計的替代實施例。An example of such a cup assembly having these and various other features is schematically illustrated in Figures 7A through 7I. The depicted cup assembly 700 includes a flexible and planar electrical contact element 705 that can conform to the shape of the edge of the substrate (e.g., the beveled region of the wafer substrate). The electrical contact elements shown in the figures are disposed on an elastomeric sealing element 703 that is integrated into the cup bottom element 701. As noted above, the elastomeric sealing element can be molded into the cup bottom member (or the cup bottom member, or the cup bottom member, etc.) during the manufacture of the cup assembly, or otherwise joined/attached to Cup bottom element. These cup assembly designs thus have certain features that differ from the designs shown in Figures 2-5 above, and the designs described and presented in Figures 7A through 7I can be considered as the cup assembly design described above. Alternative embodiment.
總的來說，圖7A-C為具有前文提及之整合式彈性密封元件703的杯體組件700的剖面與透視圖。各該等圖式呈現杯體組件700的示意圖，其具有杯底元件701，以及彈性密封元件703及電接觸元件705。具體而言，圖7A呈現通過這些元件之環狀切片的廣的剖面圖。圖7B呈現圖7A所示之圖的放大部分，其聚焦於杯底元件之支撐彈性密封元件703及電接觸元件705的部分的細節。同樣的，圖7C呈現杯體元件放大於圖7B中的部份的透視圖。從這些圖式中所示之環狀切片，應理解的係，杯底、彈性密封、以及電接觸元件之各者為大致上環狀。因為如此，彈性密封元件在本文中可稱為(例如)彈性環，而同樣的，電接觸元件在本文中可稱為接觸環，但當然應理解的係，這些元件雖然為環狀，但其設計仍可具有角度關係，例如，如圖7F所示般具有指狀物706的接觸環705之接觸指狀物(如下更詳細描述)。各該等圖式亦呈現被錐體727推向密封元件703的基板731；以及在電鍍期間提供電流至接觸元件705的導電板721(在本文中亦可稱為導電環)。In general, Figures 7A-C are cross-sectional and perspective views of a cup assembly 700 having the integrated elastomeric sealing element 703 previously mentioned. Each of these figures presents a schematic view of a cup assembly 700 having a cup bottom member 701, as well as an elastomeric sealing member 703 and an electrical contact member 705. In particular, Figure 7A presents a broad cross-sectional view through an annular slice of these elements. Figure 7B presents an enlarged portion of the view of Figure 7A, which focuses on the details of the portion of the cup bottom member that supports the resilient sealing member 703 and the electrical contact member 705. Similarly, Figure 7C presents a perspective view of a portion of the cup member enlarged in Figure 7B. From the annular slices shown in these figures, it should be understood that each of the cup bottom, the elastomeric seal, and the electrical contact elements are generally annular. Because of this, elastic sealing elements may be referred to herein as, for example, elastic rings, and as such, electrical contact elements may be referred to herein as contact rings, although it will of course be understood that although these elements are annular, they are The design can still have an angular relationship, such as contact fingers of contact ring 705 of fingers 706 as shown in Figure 7F (described in more detail below). Each of these figures also presents a substrate 731 that is pushed toward the sealing element 703 by the cone 727; and a conductive plate 721 (also referred to herein as a conductive ring) that supplies current to the contact element 705 during plating.
圖7A呈現之杯體組件的較廣的圖，圖解栓723延伸通過電性導電板(或環)721以將導電板附加至杯體組件700的杯底元件701。圖7A亦圖解包括在杯體組件中的環狀絕緣元件725，其外接於杯體組件之外側邊緣。環狀絕緣元件725避免傳導性導電板721接觸電解質。7A shows a broader view of the cup assembly, illustrating the plug 723 extending through an electrically conductive plate (or ring) 721 to attach the conductive plate to the cup bottom member 701 of the cup assembly 700. Figure 7A also illustrates an annular insulating member 725 included in the cup assembly that is circumscribed to the outer side edge of the cup assembly. The annular insulating member 725 prevents the conductive conductive plate 721 from contacting the electrolyte.
圖7B及7C呈現之杯體組件700的放大圖更特定地聚焦於杯底元件701，以及其彈性密封元件703及電接觸元件705。亦圖解密封元件703與基板731之接觸。再一次，應理解描繪於圖7A-C之剖面圖中的特徵為環狀結構之一部分，且該剖面係透過徑向切片而得到。圖7B(特寫圖)與7C(進一步的透視圖)描繪擱置在杯體組件700上的半導體基板731，其中錐體727接觸基板之背側。因此，這些圖式描繪裝載了基板的抓斗式基板固持設計的杯體與錐體特徵兩者，且其預備以與基板形成電接觸。從圖7B與7C之特寫圖可見，錐體727位於與半導體基板731之背側接觸之處，且預備以抵著基板施壓並預備以施加足夠之壓力以推進基板，從而使基板與電接觸元件705形成實體接觸。圖7B與7C中亦可見，為形成此電接觸，彈性密封元件703將僅稍微壓縮。The enlarged view of the cup assembly 700 presented in Figures 7B and 7C more specifically focuses on the cup bottom member 701, as well as its resilient sealing member 703 and electrical contact member 705. Contact of the sealing member 703 with the substrate 731 is also illustrated. Again, it will be understood that the features depicted in the cross-sectional views of Figures 7A-C are part of a toroidal structure that is obtained by radial sectioning. 7B (close-up view) and 7C (further perspective view) depict the semiconductor substrate 731 resting on the cup assembly 700 with the cone 727 contacting the back side of the substrate. Accordingly, these figures depict both the cup and cone features of the grab-type substrate holding design loaded with the substrate and are ready to make electrical contact with the substrate. As can be seen from the close-up views of Figures 7B and 7C, the cone 727 is located in contact with the back side of the semiconductor substrate 731 and is prepared to be pressed against the substrate and prepared to apply sufficient pressure to advance the substrate to electrically contact the substrate. Element 705 forms a physical contact. As can also be seen in Figures 7B and 7C, to form this electrical contact, the elastomeric sealing element 703 will only be slightly compressed.
圖7B與7C圖解，杯底元件701包括主體部分711與力矩臂713。力矩臂713為杯底元件701之主體的相對上薄的外延部(徑向朝內)，其作用以支撐彈性密封元件703、以及設置在該密封元件上的電接觸元件705。因為其支撐這些元件且因為其相對上薄，所以當基板被錐體727抵著而朝其密封與電接觸設置來施壓時，力矩臂713可撓曲(故稱其為力矩臂)至某種程度，以回應錐體727所施加的壓力。7B and 7C illustrate that the cup bottom member 701 includes a body portion 711 and a moment arm 713. The moment arm 713 is a relatively thin, outward portion (radially inwardly) of the body of the cup bottom member 701 that acts to support the resilient sealing member 703 and the electrical contact member 705 disposed on the sealing member. Because it supports these components and because it is relatively thin, when the substrate is pressed against the cone 727 and placed against its sealing and electrical contact, the moment arm 713 can flex (so called a moment arm) to some The degree is in response to the pressure exerted by the cone 727.
相較之下，杯底元件701之主體部分711設計成相對上厚(比力矩臂713厚得多)。因此主體部分可如此:當半導體基板被抵著力矩臂而施壓時，其未實質上撓曲。再者，在一些實施例中，杯底元件之主體部分不僅本身堅固，主體部分亦可經設計使得其牢固地附加至杯體結構的另一特徵。例如，在圖7A所示之實施例中，栓723將杯底701牢固地附加至導電板/環721，使得相對於杯體組件700之其他固定部分，主體部分711維持實質上不動且堅固。In contrast, the body portion 711 of the cup bottom member 701 is designed to be relatively thicker (much thicker than the moment arm 713). Thus the body portion can be such that it does not substantially deflect when the semiconductor substrate is pressed against the moment arm. Moreover, in some embodiments, the body portion of the cup bottom member is not only inherently strong, but the body portion can also be designed such that it is securely attached to another feature of the cup structure. For example, in the embodiment illustrated in Figure 7A, the peg 723 securely attaches the cup bottom 701 to the conductive plate/ring 721 such that the body portion 711 remains substantially immovable and strong relative to other fixed portions of the cup assembly 700.
因此，杯底元件之主體部分在操作期間維持實質上堅固，並且在當來自錐體727的力/壓力透過基板731、接觸元件705、密封元件703、及最後透過力矩臂713而傳遞到其上時避免任何撓曲。另一方面，力矩臂713經設計為杯底711的撓曲(一旦對基板施加足夠壓力)元件。然而，力矩臂仍經設計成盡可能得短，使得其未表現過度撓曲，同時而仍提供徑向之足夠的水平表面，以支撐電接觸元件705及彈性密封元件703。(例如，比較圖7A中杯底之主體部分711對於其力矩臂713之相對尺寸及厚度)。Thus, the body portion of the cup bottom member remains substantially strong during operation and is transmitted thereto when force/pressure from the cone 727 is transmitted through the substrate 731, the contact member 705, the sealing member 703, and finally the torque arm 713. Avoid any deflections. On the other hand, the moment arm 713 is designed as a component of the deflection of the cup bottom 711 (once a sufficient pressure is applied to the substrate). However, the moment arm is still designed to be as short as possible so that it does not exhibit excessive flexing while still providing a sufficient horizontal surface in the radial direction to support the electrical contact element 705 and the resilient sealing element 703. (For example, comparing the relative size and thickness of the body portion 711 of the cup bottom in FIG. 7A with respect to its moment arm 713).
圖7B與7C詳細圖解基板731與彈性密封元件703之間的嚙合以及與接觸元件705之嚙合的幾何圖形。例如，該等圖式圖解，徑向之最內側的接觸點(更具體而言，接觸環)係介於基板731、以及界定基板之周邊區的密封元件703之間，該周邊區為實質上排除電鍍溶液並形成電接觸之處。基板731朝向密封元件703之足夠壓力(由錐體727施加)，將密封元件壓縮而形成液密密封，且亦造成密封元件703足夠地變形，使得與電接觸元件705之接觸係在與密封之接觸的稍微徑向外側之處形成。7B and 7C detail the geometry of the engagement between the substrate 731 and the resilient sealing member 703 and the engagement with the contact member 705. For example, the drawings illustrate that the radially innermost contact point (more specifically, the contact ring) is interposed between the substrate 731 and the sealing member 703 defining the peripheral region of the substrate, the peripheral region being substantially Exclude the plating solution and form electrical contact. A sufficient pressure of the substrate 731 toward the sealing member 703 (applied by the cone 727) compresses the sealing member to form a liquid-tight seal and also causes the sealing member 703 to deform sufficiently such that contact with the electrical contact member 705 is sealed A slightly radially outer portion of the contact is formed.
此外，如前文提及，來自基板731的壓力亦可造成在接觸元件705下方的部分的彈性密封703壓縮並在該接觸元件下方產生反彈力，該反彈力造成該接觸元件撓曲並適型於基板與該接觸元件接觸之部分的形狀。具體而言，在一些實施例中，當接觸元件下方的彈性體被壓縮時，接觸元件可撓曲並調整其形狀以至於適型於基板之斜邊區的輪廓。再一次，藉由相對上薄且由可撓性傳導性材料(與表現類彈簧行為之硬化材料對比)製成的接觸元件可促成此特徵。關於杯底元件之細節 Furthermore, as mentioned above, the pressure from the substrate 731 can also cause a portion of the elastomeric seal 703 below the contact element 705 to compress and create a repulsive force beneath the contact element that causes the contact element to flex and conform to The shape of the portion of the substrate that is in contact with the contact element. In particular, in some embodiments, when the elastomer below the contact element is compressed, the contact element can flex and adjust its shape to conform to the contour of the beveled region of the substrate. Again, this feature can be facilitated by a relatively thin and contact element made of a flexible conductive material (compared to a hardened material that exhibits spring-like behavior). Details about the bottom element of the cup
如前文提及，當晶圓被向下推時，杯底元件701(除了小的力矩臂之外)避免明顯的撓曲。這係因為杯底元件701具有相對上厚的主體部分711以及相對上短且薄的力矩臂713(密封元件703設置於力矩臂713上)。As mentioned earlier, the cup bottom element 701 (in addition to the small moment arm) avoids significant deflection when the wafer is pushed down. This is because the cup bottom member 701 has a relatively thick body portion 711 and a relatively short and thin moment arm 713 (the sealing member 703 is disposed on the moment arm 713).
杯底元件701可大致上為環狀且經調整尺寸以容置標準尺寸的半導體基板，例如200mm、300mm的晶圓、或450mm的晶圓。杯底元件之內側邊緣(或更具體而言，圖7A-7C中的力矩臂713)嚙合基板(圖7A-7C中的731)之外側周邊，雖然其一般並未實質上接觸基板。如前述，反而是彈性密封元件與電接觸元件與基板形成實體接觸。在一些實施例中，杯底元件經設計以提供約1mm或更小的排除區。該排除區為基板表面之在電鍍操作期間實質上排除電鍍/電解質溶液接觸之周邊區。The cup bottom member 701 can be substantially annular and sized to accommodate a standard sized semiconductor substrate, such as a 200 mm, 300 mm wafer, or a 450 mm wafer. The inner edge of the cup bottom member (or more specifically, the moment arm 713 of Figures 7A-7C) engages the outer periphery of the substrate (731 in Figures 7A-7C), although it generally does not substantially contact the substrate. As previously mentioned, the resilient sealing element and the electrical contact element are in physical contact with the substrate. In some embodiments, the cup bottom element is designed to provide a exclusion zone of about 1 mm or less. The exclusion zone is the peripheral region of the substrate surface that substantially excludes the plating/electrolyte solution contact during the plating operation.
如圖7A-7C中解釋並呈現般，杯底元件701包括主體部分711以及力矩臂713。這些元件一起形成一整體式結構。換句話說，如在本文所描述的這些元件的分離的標註，不應被視為係意旨這些元件(主體部分以及力矩臂)必定為兩個實體上有別且分離地製造的元件(該等元件被結合在一起以形成杯底元件)。雖然該者有別且之後被結合在一起係可行的，但更典型的係，杯底之主體部分以及力矩臂被製成一個元件(例如沒有結合該者的接合件、封口等)。杯體的這些部分的標註(更具體而言，稱為「力矩臂」與「主體部分」的杯底)並非意旨分離地製造之後結合，此標註係用以強調，由於錐體對杯體施加之壓力(透過基板與錐體相抵之壓力)，該者行為相異。亦即，如前述，力矩臂為薄的且經設計以在被施加壓力時稍微撓曲，而主體部分為厚的且經設計以維持實質上堅固。As illustrated and presented in Figures 7A-7C, the cup bottom member 701 includes a body portion 711 and a moment arm 713. These elements together form a unitary structure. In other words, separate labels of such elements as described herein are not to be taken as meaning that the elements (the body portion and the moment arm) must be two physically distinct and separately manufactured components (these The elements are joined together to form a cup bottom element). Although the person is different and later combined, it is more typical that the body portion of the cup bottom and the moment arm are made into one element (for example, a joint, a seal, etc. that does not incorporate the one). The labeling of these parts of the cup (more specifically, the cups of the "torque arm" and the "body part") are not intended to be combined separately after manufacture. This labeling is used to emphasize that the cone is applied to the cup. The pressure (through the pressure of the substrate and the cone), the behavior of the person is different. That is, as previously described, the moment arm is thin and designed to flex slightly when pressure is applied, while the body portion is thick and designed to maintain substantial strength.
杯底元件的其他詳細圖呈現於圖7D到7I。這些圖式呈現杯底元件701、以及彈性密封元件703與電接觸元件705 ，與圖7A-7C所示之杯體組件700之其他元件(以及錐體727)分離。例如，圖7D與杯體組件之其他元件分離地呈現杯底元件之透視圖，或更精確來說，整體的杯底元件701的約一半的圖，該圖大致通過杯底元件701的中心軸切開，因此圖解環狀區的約180度，也就是杯底之約一半的圓周。因此，該圖圖解杯底元件大致上環狀之結構。該圖亦呈現栓孔724，栓孔724用於例如藉由如圖7A所示之栓723將此具體杯底結構附接至杯體組件700的架座(rest)。圖7A中亦呈現，在此具體實施例中，杯底元件701經設計以被栓接至電性導電板721。亦可想見將杯底元件與杯體組件結合的其他機制，例如應用扣具將杯底卡扣至杯體組件的架座、或使用附著劑將杯底接合至杯體組件的架座的嚙合機制。Further detailed views of the cup bottom element are presented in Figures 7D through 7I. These figures present the cup bottom element 701, as well as the elastomeric sealing element 703 and the electrical contact element 705, separate from the other elements of the cup assembly 700 (and cone 727) shown in Figures 7A-7C. For example, Figure 7D presents a perspective view of the cup bottom member separately from the other elements of the cup assembly, or more precisely, about half of the overall cup bottom member 701, which generally passes through the central axis of the cup bottom member 701. Cut, thus illustrating about 180 degrees of the annulus, that is, about half of the circumference of the cup bottom. Thus, the figure illustrates a substantially annular structure of the cup bottom member. The figure also presents a pinhole 724 for attaching the particular cup bottom structure to the rest of the cup assembly 700, such as by a peg 723 as shown in Figure 7A. Also shown in FIG. 7A, in this embodiment, the cup bottom member 701 is designed to be bolted to the electrically conductive plate 721. Other mechanisms for combining the cup bottom member with the cup assembly are also contemplated, such as applying a clip to snap the bottom of the cup to the holder of the cup assembly, or attaching the bottom of the cup to the holder of the cup assembly using an adhesive. Engagement mechanism.
圖7E呈現圖7D之放大圖，同樣與杯體組件之其他元件分離地聚焦於圖7D之杯底元件的剖面，並呈現從杯底之中心軸切下的切片，而圖7E進一步放大於圖7F，圖7F特定地聚焦於力矩臂713(其上方具有彈性密封703與接觸元件705)。這些圖式呈現力矩臂713之從杯底元件的架座徑向朝內的外延部，以及設置在外延部上的彈性密封元件703與電接觸元件705的置放。圖7E中的圖亦圖解杯底元件之力矩臂713與主體部分711的相對比例。同樣可見的係，在徑向以及從其高度(即垂直方向之厚度)而言，力矩臂713皆確實比主體部分711小得多。根據實施例，力矩臂的徑向寬度(其徑向朝內之(末端)尖端、以及其與杯底元件之主體部分結合的點之間的水平距離)可至多約 0.3 英吋、或至多約 0.1英吋、或在某些實施例中， 介與約0.04 與 0.3英吋。注意力矩臂的徑向寬度應設計以符合排除區之要求。因此，在某些實施例中，其至少需和排除區一樣長(例如至少1mm)。Figure 7E is an enlarged view of Figure 7D, again focusing on the cross-section of the cup bottom member of Figure 7D, separately from the other elements of the cup assembly, and presenting a slice cut from the central axis of the cup bottom, and Figure 7E is further enlarged. 7F, FIG. 7F is specifically focused on the moment arm 713 (with the elastomeric seal 703 and the contact element 705 above). These figures present the radially inwardly extending portion of the moment arm 713 from the holder of the cup bottom member, as well as the placement of the resilient sealing member 703 and the electrical contact member 705 disposed on the extension. The diagram in Figure 7E also illustrates the relative proportions of the moment arm 713 of the cup bottom member to the body portion 711. Also visible is that the moment arm 713 is indeed much smaller than the body portion 711 in the radial direction and from its height (i.e., the thickness in the vertical direction). According to an embodiment, the radial extent of the moment arm (the horizontally inward (end) tip, and the horizontal distance between its point of engagement with the body portion of the cup bottom element) may be up to about 0.3 inches, or at most 0.1 inch, or in some embodiments, between about 0.04 and 0.3 inches. Note that the radial width of the moment arm should be designed to meet the requirements of the exclusion zone. Thus, in certain embodiments, it must be at least as long as the exclusion zone (e.g., at least 1 mm).
力矩臂之設計通常如此:在半導體基板置放在杯體上之期間，力矩臂提供杯底元件的實質上所有的彎曲。因此，在某些實施例中，力矩臂具有介於約0.010與0.1英吋、或更具體而言介與約0.015與0.025英吋的厚度，該厚度為，在晶圓***的方向上之在力矩臂的最薄區段中的力矩臂之頂部與底部之間的距離(即圖7A中力矩臂的垂直高度)。The design of the moment arm is generally such that the moment arm provides substantially all of the curvature of the cup bottom element during placement of the semiconductor substrate on the cup. Thus, in some embodiments, the moment arm has a thickness of between about 0.010 and 0.1 inches, or, more specifically, between about 0.015 and 0.025 inches, the thickness being in the direction of wafer insertion. The distance between the top and bottom of the moment arm in the thinnest section of the moment arm (ie, the vertical height of the moment arm in Figure 7A).
此垂直高度/厚度可相對於杯底元件之主體部分的厚度薄許多，如圖7E中詳細圖解，因為力矩臂可撓曲之同時，主體部分被設計成當基板被錐體抵著密封元件與力矩臂而推進時維持實質上堅固、及/或避免彎曲及/或變形。因此，儘管力矩臂通常可具有平坦的環狀水平表面之形狀，但主體部分通常在垂直方向上實質上較厚，且具有大致上梯形及/或多邊形的形狀、及/或剖面上具有彎曲表面的形狀。藉由以強且堅固的材料來製造杯底元件701，亦可增強對於彎曲及/或變形之抵抗。This vertical height/thickness can be much thinner relative to the thickness of the body portion of the cup bottom member, as illustrated in detail in Figure 7E, because the body portion can be flexed while the body portion is designed to be pressed against the sealing member by the cone. The moment arm is maintained substantially rigid while propelling and/or avoids bending and/or deformation. Thus, although the moment arm can generally have the shape of a flat annular horizontal surface, the body portion is generally substantially thicker in the vertical direction and has a generally trapezoidal and/or polygonal shape and/or has a curved surface in cross section. shape. Resistance to bending and/or deformation can also be enhanced by making the cup bottom member 701 from a strong and strong material.
此外，在某些實施例中，主體部分可具有至少約0.2英吋、或更具體而言至少約0.3英吋之最大厚度(垂直於徑向方向之垂直高度，頂部至底部)；在一些實施例中，其可具有介於約0.2與1英吋之最大垂直高度。關於平均垂直高度/厚度，在某些實施例中，主體部分可具有至少約0.1英吋、或至少約0.3英吋、或至少約0.5英吋、或甚至更具體而言至少約1.0英吋之平均垂直高度。在一 些實施例中，主體部分之平均垂直高度可介於約0.1與1.0英吋、或更具體而言介於約0.2與0.5英吋。Moreover, in certain embodiments, the body portion can have a maximum thickness of at least about 0.2 inches, or, more specifically, at least about 0.3 inches (vertical height perpendicular to the radial direction, top to bottom); in some implementations In an example, it can have a maximum vertical height of between about 0.2 and 1 inch. With respect to average vertical height/thickness, in certain embodiments, the body portion can have at least about 0.1 inch, or at least about 0.3 inches, or at least about 0.5 inches, or even more specifically at least about 1.0 inch. Average vertical height. In some embodiments, the body portion may have an average vertical height of between about 0.1 and 1.0 inches, or, more specifically, between about 0.2 and 0.5 inches.
再者，根據實施例，杯底元件之主體部分之平均垂直高度/厚度，比上力矩臂之平均垂直高度/厚度的比例，可大於約3、或更具體而言該比例可大於約5、或甚至更具體而言大於約20，視實施例而定。Moreover, according to an embodiment, the average vertical height/thickness of the body portion of the cup bottom member may be greater than about 3, or more specifically greater than about 5, the ratio of the average vertical height/thickness of the upper moment arm. Or even more specifically greater than about 20, depending on the embodiment.
同樣的，杯底元件之主體部分之徑向寬度可介於約0.5與3英吋、或介於約0.75與1.5英吋。一般而言，其經有利地調整尺寸以允許與杯體的其他元件之固定結構性結合。Likewise, the body portion of the cup bottom member may have a radial extent of between about 0.5 and 3 inches, or between about 0.75 and 1.5 inches. In general, it is advantageously sized to allow for a fixed structural bond with other elements of the cup.
在某些實施例中，圖7E亦可見杯底元件701之主體部分711(徑向朝內)朝其與力矩臂713接觸的點突然地變尖細。換句話說，如圖7E所示，在一些實施例中，杯底元件701以從厚區段之主體部分711到平坦結構之力矩臂713的相當短的距離(徑向朝內)緊接地變尖細。在某些實施例中，從最厚區段之主體部分711到力矩臂713變尖細，係在少於約0.5英吋、或更具體而言少於約0.1英吋、或介於約0.1與0.5英吋的距離上。此外，以及圖7A與7E中進一步呈現，在具體圖解之實施例中，大部分的主體部分711係垂直地定位在力矩臂713之上方。In some embodiments, FIG. 7E also shows that the body portion 711 of the cup bottom member 701 (radially inwardly) abruptly tapers toward its point of contact with the moment arm 713. In other words, as shown in Figure 7E, in some embodiments, the cup bottom member 701 is brought into close contact with a relatively short distance (radially inward) from the body portion 711 of the thick section to the moment arm 713 of the flat structure. Sharp. In certain embodiments, from the body portion 711 of the thickest section to the moment arm 713, the taper is less than about 0.5 inches, or, more specifically, less than about 0.1 inches, or about 0.1. At a distance of 0.5 inches. Furthermore, and as further illustrated in Figures 7A and 7E, in the particular illustrated embodiment, a majority of the body portion 711 is positioned vertically above the moment arm 713.
因此，可將力矩臂713視為從杯底元件701之主體部分711朝基板朝內延伸，且因此，在一些實施例中，可將其進一步視為以懸臂之方式操作，以在基板於電鍍操作之前被接收進杯體時(以及在電鍍操作本身期間)實體上支撐該基板的邊緣。Thus, the moment arm 713 can be considered to extend inwardly from the body portion 711 of the cup bottom member 701 toward the substrate, and thus, in some embodiments, can be further considered to operate in a cantilever manner for plating on the substrate The edge of the substrate is physically supported when it is received into the cup prior to operation (and during the plating operation itself).
除了實體上支撐基板之外，力矩臂支撐密封元件並將其適當地相對於基板的邊緣而定位，而得以建立不滲漏的密封，藉此在基板的邊緣附近形成前述之介電質排除區。In addition to physically supporting the substrate, the moment arm supports the sealing element and is properly positioned relative to the edge of the substrate to create a leak-tight seal whereby the aforementioned dielectric exclusion zone is formed adjacent the edge of the substrate .
因此，力矩臂可成形以容置環狀的密封元件，其在操作期間一般坐落在力矩臂與晶圓之間，例如圖式中所示之環狀的密封元件703。在某些實施例中，力矩臂具有實質上直線狀或線狀的水平形狀，而無明顯的垂直特徵。在某些實施例中，力矩臂、以及鄰近的(垂直外側)杯底之主體區段的部分經成形以形成一模型，該模型用以將彈性密封元件直接地形成在杯底，例如通過前驅物之聚合反應(如下進一步描述)來模製。Thus, the moment arm can be shaped to receive an annular sealing element that is generally located between the moment arm and the wafer during operation, such as the annular sealing element 703 shown in the drawings. In some embodiments, the moment arm has a substantially linear or linear horizontal shape without significant vertical features. In some embodiments, the moment arm, and a portion of the body section of the adjacent (vertical outer) cup bottom are shaped to form a mold for forming the elastomeric sealing element directly at the bottom of the cup, such as by a precursor The polymerization of the material (described further below) is molded.
用以形成杯底元件的材料一般為相當堅固的材料。此外，其可由傳導性或絕緣性材料製成。在一些實施例中，杯底元件由金屬製成，例如鈦、鈦合金、或不鏽鋼。在一些實施例中，若其由傳導性材料製成，則該傳導性材料可使用絕緣性材料塗佈。在其他實施例中，杯底元件由非傳導性材料製成，例如諸如PPS或 PEEK之塑膠。在其他實施例中，杯底元件由陶瓷材料製成。 在某些實施例中，杯底元件具有特性為楊氏係數(Young's modulus)介於約 300,000 與55,000,000 psi、或更具體而言介於約450,000與30,000,000 psi的剛性。關於密封元件 ( 唇形密封 ) 之細節 The material used to form the cup bottom member is generally a relatively strong material. Furthermore, it can be made of a conductive or insulating material. In some embodiments, the cup bottom member is made of metal, such as titanium, titanium alloy, or stainless steel. In some embodiments, if it is made of a conductive material, the conductive material can be coated with an insulating material. In other embodiments, the cup bottom member is made of a non-conductive material such as a plastic such as PPS or PEEK. In other embodiments, the cup bottom member is made of a ceramic material. In certain embodiments, the cup bottom member has a stiffness characterized by a Young's modulus of between about 300,000 and 55,000,000 psi, or, more specifically, between about 450,000 and 30,000,000 psi. Details on the sealing member (lip seal) of
大致上，彈性密封元件為一環狀元件，其適貼地配合在力矩臂之頂部，且選擇性地，與杯底之主體部分的內側徑向邊緣相抵。在某些實施例中，密封元件具有約0.5英吋或更小、或約0.2英吋或更小或介於約0.05與0.2英吋、或介於約 0.06與 0.10 英吋之徑向寬度。通常選擇足夠的總徑向寬度以容置與設備之使用相關的晶圓的邊緣排除區。同樣的，通常適當地選擇彈性密封元件的直徑以容置標準晶圓基板，例如200mm、300mm的晶圓、或450mm的晶圓。In general, the resilient sealing element is an annular element that fits snugly over the top of the moment arm and, optionally, against the inner radial edge of the body portion of the cup bottom. In certain embodiments, the sealing element has a radial width of about 0.5 inches or less, or about 0.2 inches or less, or between about 0.05 and 0.2 inches, or between about 0.06 and 0.10 inches. A sufficient total radial width is typically selected to accommodate the edge exclusion zone of the wafer associated with the use of the device. Similarly, the diameter of the elastomeric sealing element is typically suitably selected to accommodate a standard wafer substrate, such as a 200 mm, 300 mm wafer, or a 450 mm wafer.
彈性密封元件的垂直厚度可介於約0.005與 0.050英吋、或更具體而言介於約0.010與0.025英吋。為在密封元件與基板之間形成實質上不滲漏的密封，可選擇密封元件之厚度與形狀，以促進密封元件與基板邊緣之間的實質上連續的接觸。The vertical thickness of the elastomeric sealing element can be between about 0.005 and 0.050 inches, or, more specifically, between about 0.010 and 0.025 inches. To form a substantially leak-tight seal between the sealing element and the substrate, the thickness and shape of the sealing element can be selected to promote substantially continuous contact between the sealing element and the edge of the substrate.
在某些實施例中，密封元件具有L的形狀(或實質上似L的形狀)，其中，在密封元件的內側半徑處該「L」的短臂朝上延伸。例如請見圖7B與7C，呈現針對此具體實施例，密封元件703具有小的朝上凸出部704，其位在密封元件703之徑向最內側部分之處，朝上凸出部704位於密封元件的實質上水平部分(電接觸元件設置在其上)之徑向內側並且位於該密封元件的實質上水平部分的垂直上方(在凸出部被晶圓基板抵著施壓而壓縮之前，如下所述)。In some embodiments, the sealing element has the shape of L (or a substantially L-like shape) wherein the short arm of "L" extends upwardly at the inner radius of the sealing element. For example, see Figures 7B and 7C, for this embodiment, the sealing element 703 has a small upwardly projecting portion 704 that is located at the radially innermost portion of the sealing member 703 with the upwardly projecting portion 704 located a substantially radially inner portion of the sealing element (on which the electrical contact element is disposed) and vertically above a substantially horizontal portion of the sealing element (before the projection is compressed by the wafer substrate against pressure) As described below).
此小的朝上凸出部可與晶圓嚙合以提供不滲漏的密封。可見於圖7B與7C所示之範例，此朝上凸出部704之壓縮不僅在電接觸元件705的徑向朝內之處建立不滲漏的密封，該朝上凸出部之壓縮亦實現基板邊緣與電接觸元件705之間的接觸。在一些實施例中，可藉由力矩臂自身的撓曲、彎曲或似懸臂的移動來幫助該接觸。在某些實施例中，根據密封元件的壓縮程度、其幾何形狀、以及電接觸元件的幾何形狀以及和力矩臂相關之任何撓曲，朝上凸出部之壓縮(可能伴隨力矩臂之撓曲/彎曲)可允許電接觸元件接觸基板之斜邊區。此外，在彈性密封元件位於電接觸元件之下層的實施例中，密封元件之位於接觸元件下方的部分的壓縮，可允許接觸元件變形成晶圓基板之形狀，例如，舉例來說，接觸元件適型於晶圓基板的斜邊區之徑向輪廓之形狀。根據實施例，前述密封元件(例如針對L形或似L形的彈性密封元件)之朝上凸出部的垂直高度可介於約0.005與0.040英吋、或更具體而言介於約0.010與0.025英吋。電接觸元件 This small upward projection can engage the wafer to provide a leak-tight seal. As can be seen in the examples shown in Figures 7B and 7C, the compression of the upwardly projecting portion 704 not only establishes a leak-tight seal in the radially inward direction of the electrical contact member 705, but also the compression of the upwardly projecting portion. Contact between the edge of the substrate and the electrical contact element 705. In some embodiments, the contact can be assisted by flexing, bending or cantilevering movement of the moment arm itself. In some embodiments, depending on the degree of compression of the sealing element, its geometry, and the geometry of the electrical contact element and any deflection associated with the moment arm, compression of the upwardly convex portion (possibly accompanied by deflection of the moment arm) / Bend) allows the electrical contact element to contact the beveled area of the substrate. Furthermore, in embodiments where the elastomeric sealing element is located below the electrical contact element, the compression of the portion of the sealing element below the contact element may allow the contact element to deform into the shape of the wafer substrate, for example, for example, the contact element The shape of the radial profile of the beveled region of the wafer substrate. According to an embodiment, the vertical height of the upwardly projecting portion of the aforementioned sealing element (for example for an L-shaped or L-shaped elastic sealing element) may be between about 0.005 and 0.040 inches, or more specifically between about 0.010 and 0.025 inches. Electrical contact element
電接觸元件由傳導性材料製成，所以其可在電鍍操作期間提供電流至基板。典型上，該傳導性材料為某種金屬、合金等，且其可經成形並調整尺寸以座落在力矩臂之上表面上，一般在密封元件之上方但在該密封元件之與基板形成實質上不滲漏密封的部分的徑向外側處。如此配置圖解於圖7B與7C中。在某些實施例中，接觸環由實質上平坦的可撓性及/或可變形的傳導性材料製成，因此其以較大之接觸面積接觸晶圓晶種層。此外，在一些實施例中，將平坦且薄的可撓性接觸元件定位/設置在一部分的彈性密封元件上方，可允許接觸元件在當基板對其施壓時稍微地變形，並適型於基板表面與其接觸之部分，而形成保型接觸表面。透過由彈性密封元件之位於接觸元件下方的部分所施加在該接觸元件上的相反的壓縮力(向上的力)，可強化該接觸元件適型於基板表面與其接觸之形狀(例如適型於基板之斜邊區的輪廓)。因此，可強化基板與電接觸元件之間的電連接的品質、一致性及/或均勻度。The electrical contact elements are made of a conductive material so they can provide current to the substrate during the plating operation. Typically, the conductive material is a metal, alloy, etc., and it can be shaped and sized to seat on the upper surface of the moment arm, generally above the sealing element but forming a substantial substance with the substrate The radially outer portion of the portion that does not leak the seal. Such a configuration is illustrated in Figures 7B and 7C. In some embodiments, the contact ring is made of a substantially flat flexible and/or deformable conductive material such that it contacts the wafer seed layer with a larger contact area. Moreover, in some embodiments, positioning and disposing a flat and thin flexible contact element over a portion of the elastomeric sealing element may allow the contact element to be slightly deformed when the substrate is pressed thereto and adapted to the substrate The portion of the surface in contact with it forms a conformal contact surface. By opposing the compressive force (upward force) exerted on the contact element by the portion of the elastic sealing element below the contact element, the contact element can be shaped to conform to the shape of the substrate surface (eg, suitable for the substrate) The outline of the hypotenuse area). Thus, the quality, uniformity, and/or uniformity of the electrical connections between the substrate and the electrical contact elements can be enhanced.
在一些實施例中，電接觸元件可為平坦且薄的，但可成形為接觸指狀物，該等接觸指狀物經定向，使得該者圍繞接觸元件之圓周而指向徑向內側。該等接觸指狀物有助於提高電連接的品質、一致性及/或均勻度，因為與若使用整塊的(solid)傳導性材料條(即使薄且平坦)之情況相比，該等接觸指狀物在當基板施加壓力於該者上方時於垂直方向上更為可變形的及/或可撓性(雖然在一些實施例中，整塊的傳導性材料條亦適用於提供必要的電連接)。In some embodiments, the electrical contact elements can be flat and thin, but can be shaped as contact fingers that are oriented such that the person points radially inward about the circumference of the contact element. The contact fingers help to improve the quality, consistency and/or uniformity of the electrical connections, as compared to the case where a solid strip of conductive material (even thin and flat) is used. The contact fingers are more deformable and/or flexible in the vertical direction when the substrate is applied under pressure to the person (although in some embodiments, the monolithic strip of conductive material is also suitable for providing the necessary Electrical connection).
如前述，電接觸元件通常實質上徑向對稱且為環狀，使得其與被電鍍的基板對稱地接觸，並且在其接觸基板的表面部分尤其為對稱性。因此緣故，其在本文中亦可稱為接觸環。例示性接觸環之徑向形狀圖解於圖7G到7I所示之杯底元件701的展開圖，類似於圖7D-7E所示之杯底元件的未展開圖。在後方的圖式(圖7G-7I)中，呈現與杯底元件701分離的電接觸元件705，故可區分出電接觸元件705之形狀。具體而言，圖7G呈現約一半的例示性電接觸元件705之環狀結構，與杯底元件701之其餘部分垂直地分離。圖7H將通過圖7G所示之杯底元件的剖面切片的一端放大，且圖7I為進一步放大圖，聚焦於杯底元件的剖面，並且電接觸元件705同樣與杯底元件701分離。As mentioned above, the electrical contact elements are generally substantially radially symmetrical and annular such that they are in symmetrical contact with the substrate being plated and are particularly symmetrical at the surface portion where they contact the substrate. For this reason, it may also be referred to herein as a contact ring. The radial shape of the exemplary contact ring is illustrated in the expanded view of the cup bottom member 701 shown in Figures 7G through 7I, similar to the undrowed view of the cup bottom member shown in Figures 7D-7E. In the rear pattern (Figs. 7G-7I), the electrical contact elements 705 are separated from the cup bottom element 701 so that the shape of the electrical contact elements 705 can be distinguished. In particular, Figure 7G presents about half of the annular structure of the exemplary electrical contact element 705, vertically separated from the remainder of the cup bottom element 701. Figure 7H is an enlarged view of one end of a section slice through the cup bottom member shown in Figure 7G, and Figure 7I is a further enlarged view focusing on the cross-section of the cup bottom member, and the electrical contact member 705 is also separated from the cup bottom member 701.
從這些圖式可注意到，在接觸環705的實際基板接觸部分的外側之處的該環的徑向對稱性可被破壞，而對接觸環705操作之影響可能很小，因為徑向外側部分未與基板形成電連接。這可見於圖7I之杯底元件的展開圖，其中可見接觸環705具有緊固元件707，當組裝以操作時，緊固元件707配合在杯底元件701的凹槽709中。亦可注意到，即使接觸環之接觸基板的徑向內側部分，也僅大致上徑向對稱，因為(例如)電接觸指狀物之存在，以小角度破壞對稱性。該等接觸指狀物呈現於圖7I中，並更清楚地呈現於圖7F中。It can be noted from these figures that the radial symmetry of the ring at the outer side of the actual substrate contact portion of the contact ring 705 can be broken, and the effect on the operation of the contact ring 705 can be small because the radially outer portion No electrical connection is made to the substrate. This can be seen in the expanded view of the cup bottom element of Figure 7I, wherein the visible contact ring 705 has a fastening element 707 that fits into the recess 709 of the cup bottom element 701 when assembled for operation. It is also noted that even the radially inner portion of the contact substrate of the contact ring is only substantially radially symmetric, with symmetry being broken at a small angle due to, for example, the presence of electrical contact fingers. These contact fingers are presented in Figure 7I and are more clearly presented in Figure 7F.
電接觸元件/環705具有容置位於標準半導體晶圓基板(例如200mm、300mm的晶圓、或450mm的晶圓)上的晶種層之外側區的直徑。電接觸元件/環705可經調整尺寸以平坦放置在彈性密封元件703上方。在某些實施例中，電接觸元件/環705可具有約0.500 英吋或更小、或介於 0.040與0.500 英吋、或更具體而言介於約 0.055與 0.200英吋的徑向寬度。接觸環之徑向寬度界定為從接觸環的外側徑向邊緣到其內側徑向邊緣的徑向方向上的距離，例如由呈現於圖7F與7I中的接觸環上的接觸指狀物的徑向內側距離所界定。接觸指狀物之垂直厚度一般介於約0.0005與0.010英吋、或更具體而言介於約0.001 與0.003英吋。The electrical contact element/ring 705 has a diameter that accommodates the outer side region of the seed layer on a standard semiconductor wafer substrate (eg, a 200 mm, 300 mm wafer, or a 450 mm wafer). The electrical contact element/ring 705 can be sized to be placed flat over the resilient sealing element 703. In certain embodiments, the electrical contact elements/rings 705 can have a radial width of about 0.500 inches or less, or between 0.040 and 0.500 inches, or, more specifically, between about 0.055 and 0.200 inches. The radial extent of the contact ring is defined as the distance in the radial direction from the outer radial edge of the contact ring to the inner radial edge thereof, such as the diameter of the contact fingers presented on the contact ring in Figures 7F and 7I. Defined to the inside distance. The vertical thickness of the contact fingers is typically between about 0.0005 and 0.010 inches, or, more specifically, between about 0.001 and 0.003 inches.
在某些實施例中，例如圖7F與7I所示之例示性實施例，接觸環具有複數徑向朝內凸出的指狀物，用以在基板被固持於杯底中時接觸基板之邊緣。這些指狀物可具有介於約0.01與0.100英吋、或更具體而言介於約0.020與0.050英吋的徑向寬度。該等指狀物可具有介於約0.02與0.10英吋 、或介於約0.04與0.06英吋的中心之間的間距。在某些實施例中，該間距在接觸環的圓周上不變。在其他實施例中，該間距在接觸環的圓周上可變化。可在接觸環之內側圓周判斷該間距。針對平坦放置在彈性密封元件的接觸指狀物而言，其間距可透過彈性密封元件的表面之角度來判斷。In some embodiments, such as the exemplary embodiment illustrated in Figures 7F and 7I, the contact ring has a plurality of radially inwardly projecting fingers for contacting the edge of the substrate when the substrate is held in the cup bottom. . These fingers can have a radial width of between about 0.01 and 0.100 inches, or, more specifically, between about 0.020 and 0.050 inches. The fingers can have a spacing between about 0.02 and 0.10 inches, or between centers of about 0.04 and 0.06 inches. In some embodiments, the spacing is constant over the circumference of the contact ring. In other embodiments, the spacing may vary across the circumference of the contact ring. The spacing can be judged on the inner circumference of the contact ring. For contact fingers placed flat on the elastic sealing element, the spacing can be judged by the angle of the surface of the elastic sealing element.
在某些實施例中，接觸環實質上平坦且其實質上平坦地放置在彈性密封元件上，而彈性密封元件本身可平坦放置在力矩臂上。整體上，應將此設計與接觸環具有L型結構之設計(其中該L的朝上延伸的短臂接觸基板)區分開，亦與應用類懸臂之接觸指狀物之設計(如圖3A所示)區分開。在應用接觸指狀物(實質上平坦地放置於彈性密封元件上)的這些設計中，吾人認為，(在一些實施例中)可達成與晶圓晶種層之外側直徑之改良的電接觸。因為接觸環實質上平坦，所以可消除(例如)因類懸臂接觸指狀物的彎曲程度而產生的任何額外的累計容差需求。因此，有了實質上平坦的電接觸元件，可更精準地定位並控制介於電接觸元件與基板之間的電接觸區塊，且因此可應用將接觸區塊定位得更靠近基板邊緣之設計。這因此實現界定徑向上更外側之周邊區(在實質上排除電鍍溶液的基板表面上)的密封元件之應用，使得在電鍍操作期間可達成較小的邊緣排除距離。In some embodiments, the contact ring is substantially flat and it is placed substantially flat on the resilient sealing element, while the resilient sealing element itself can be placed flat on the moment arm. Overall, this design should be distinguished from the design of the contact ring with an L-shaped structure (where the L's upwardly extending short arm contacts the substrate), as well as the design of the contact fingers of the application cantilever (as shown in Figure 3A). Show) separate. In these designs where contact fingers are applied (substantially placed flat on the elastomeric sealing element), it is believed that (in some embodiments) an improved electrical contact with the outer diameter of the wafer seed layer can be achieved. Because the contact ring is substantially flat, any additional cumulative tolerance requirements due to, for example, the degree of bending of the cantilevered contact fingers can be eliminated. Thus, with a substantially flat electrical contact element, the electrical contact block between the electrical contact element and the substrate can be positioned and controlled more precisely, and thus the design of positioning the contact block closer to the edge of the substrate can be applied. . This thus achieves the application of a sealing element defining a radially outerer peripheral zone (on the substrate surface that substantially excludes the plating solution) such that a smaller edge exclusion distance can be achieved during the plating operation.
雖然圖7A-7I中呈現接觸環完全地平坦，但在一些實施例中，在接觸基板的徑向內側部分上實質上平坦的接觸元件，可具有徑向外側有角度的部分，例如用以與導電板形成接觸。然而，在這樣的實施例中，接觸環之位於力矩臂上的部分仍實質上平坦。接觸元件之接觸指狀物亦可如前述般具有稍微的坡度，但仍亦可說大致上接觸元件(以及其接觸指狀物)實質上平坦設置在彈性密封元件上方。Although the contact ring is shown to be completely flat in Figures 7A-7I, in some embodiments, the substantially flat contact element on the radially inner portion of the contact substrate may have a radially outer angled portion, for example to The conductive plates form a contact. However, in such an embodiment, the portion of the contact ring that is on the moment arm is still substantially flat. The contact fingers of the contact elements may also have a slight slope as previously described, but it is still said that substantially the contact elements (and their contact fingers) are disposed substantially flat above the elastomeric sealing element.
電接觸元件/環可由相對上可撓性傳導性材料製成，其可彎曲及/或變形以在電鍍操作期間(或之前)當基板被抵著力矩臂施壓時適應基板以及下層的彈性密封元件之形狀。例如，電接觸元件/環可由薄的非硬化金屬片製成。因此，接觸元件之與基板接觸的部分可為薄的可撓性及/或可適型金屬片，厚度約0.01 英吋或更薄、或更具體而言厚度約 0.005英吋或更薄、或甚至更具體而言厚度約0.002英吋或更薄。含接觸環的金屬可包含不鏽鋼。在一些實施例中，金屬可包含貴重金屬合金。此類合金可包括鈀合金、包括選擇性含金及/或鉑的鈀銀合金。一範例為由DERINGER-NEY INC 製造的Palinery 7 。杯體組件 與彈性密封元件的整體式製造 The electrical contact element/ring can be made of a relatively flexible conductive material that can be bent and/or deformed to accommodate the substrate and the underlying elastic seal when the substrate is pressed against the moment arm during the plating operation (or before) The shape of the component. For example, the electrical contact elements/rings can be made from a thin, non-hardened sheet of metal. Thus, the portion of the contact element that is in contact with the substrate can be a thin flexible and/or conformable metal sheet having a thickness of about 0.01 inches or less, or more specifically about 0.005 inches or less, or Even more specifically, the thickness is about 0.002 inches or less. The metal containing the contact ring may comprise stainless steel. In some embodiments, the metal can comprise a precious metal alloy. Such alloys may include palladium alloys, including palladium silver alloys that selectively contain gold and/or platinum. An example is Palinery 7 manufactured by DERINGER-NEY INC. Integral manufacturing of cup assembly and elastic sealing element
雖然通常用於將基板密封於電鍍抓斗中的彈性密封元件為分離的元件，其在電鍍操作之前由使用者安裝在抓斗中，但在本文所揭露之許多實施例中，杯體組件與其密封元件在製造過程中被整合。在如此例子中，可透過附著、模製、或其他避免彈性密封元件從杯底元件上脫開的適當處理，在製造期間將彈性密封元件附加至杯底元件。如此，可將彈性密封元件視為杯體組件的固定特徵，而非視為分離的元件。While the elastomeric sealing element typically used to seal a substrate in an electroplating grapple is a separate component that is installed in the grapple by a user prior to the electroplating operation, in many of the embodiments disclosed herein, the cup assembly is The sealing elements are integrated during the manufacturing process. In such an example, the elastomeric sealing element can be attached to the cup bottom element during manufacture by attachment, molding, or other suitable treatment that prevents the elastic sealing element from being disengaged from the cup bottom element. As such, the elastomeric sealing element can be considered a fixed feature of the cup assembly and is not considered a separate component.
在一些實施例中，彈性密封元件可原位形成在杯底元件內側，例如，透過將其模製在杯底元件中。在此方式中，將組成成形密封元件的彈性材料之化學前驅物放置在力矩臂之待設置該成形密封元件的位置上，然後透過例如下列機制對該化學前驅物進行處理，以形成所需之彈性材料:聚合反應、固化、或將化學前驅物材料轉化成已成形彈性材料(具有密封元件之所需的最終結構形狀)的其他機制。In some embodiments, the elastomeric sealing element can be formed in-situ inside the cup bottom member, for example, by molding it into the cup bottom member. In this manner, the chemical precursor of the elastomeric material comprising the shaped sealing element is placed at the location of the momentary arm where the shaped sealing element is to be placed, and then the chemical precursor is processed, for example, by the following mechanism to form the desired Elastomeric material: other mechanism for polymerization, solidification, or conversion of a chemical precursor material into a shaped elastomeric material (having the desired final structural shape of the sealing element).
在其他實施例中，將密封元件預形成為其所需之最終形狀，然後透過下列操作在杯體組件之製造期間與堅固的(塑膠或金屬)杯底元件結合:經由附著、膠合等，或若干其他適當的附加機制，將密封元件附加至杯底元件之力矩臂上的適當位置。In other embodiments, the sealing element is preformed into its desired final shape and then bonded to a strong (plastic or metal) cup element during manufacture of the cup assembly by attachment, gluing, etc., or A number of other suitable additional mechanisms attach the sealing element to the appropriate position on the moment arm of the cup bottom element.
與使用將杯體組件與密封元件作為分離元件的製造所通常達到者相比，透過杯體組件與其彈性密封元件之整合式製造，可將密封元件更精準地形成為其所需形狀並更精準地設置在杯體組件之杯底元件的結構中。與杯底元件的固定支撐座結合，允許精確定位密封元件之接觸基板的部分。因此，因為所需的定位誤差範圍較小，所以可應用縮小的軸向輪廓的密封元件，而因此，允許密封元件經設計以在明顯更靠近基板邊緣之處接觸杯體組件內的基板，進而縮短電鍍操作期間的邊緣排除區。舉例來說，透過減少/消除卡住的氣泡，密封元件與杯底(具體而言，杯底之力矩臂)的結合的較薄之內側邊緣增強晶圓上的電鍍效能。系統控制器 By integrating the cup assembly with its elastic sealing element, the sealing element can be more accurately formed into its desired shape and more accurately than is generally achieved by the use of a cup assembly and a sealing element as separate components. It is placed in the structure of the cup bottom element of the cup assembly. The combination with the fixed support of the cup bottom element allows precise positioning of the portion of the sealing element that contacts the substrate. Thus, because the required range of positioning errors is small, a reduced axial profile of the sealing element can be applied, and thus, allowing the sealing element to be designed to contact the substrate within the cup assembly at a location significantly closer to the edge of the substrate, thereby Shorten the edge exclusion zone during the plating operation. For example, by reducing/eliminating the trapped air bubbles, the thinner inner edge of the combination of the sealing element and the cup bottom (specifically, the moment arm of the cup bottom) enhances the plating performance on the wafer. System controller
在某些實施例中，一系統控制器用以控制密封抓斗期間及/或處理基板期間的製程條件。該控制器一般包括一或更多的記憶體裝置及一或更多的處理器。該處理器包括CPU、或電腦、類比及/或數位輸入/輸出連接件、步進馬達控制面板等。用以執行適當控制操作的指令在處理器上執行。這些指令可儲存在與該控制器連接的記憶體裝置上，或可透過網路提供。In some embodiments, a system controller is used to control process conditions during sealing of the grapple and/or during processing of the substrate. The controller typically includes one or more memory devices and one or more processors. The processor includes a CPU, or a computer, an analog and/or digital input/output connector, a stepper motor control panel, and the like. Instructions for performing appropriate control operations are executed on the processor. These instructions can be stored on a memory device connected to the controller or can be provided over a network.
在某些實施例中，該系統控制器控制處理系統的所有活動。該系統控制器執行包括指令組的系統控制軟體，以控制前文列舉之處理步驟的時程以及特定處理的其他參數。在其他實施例中，可使用儲存在與該控制器連接的記憶體裝置中的其他電腦程式、指令碼、或程序。In some embodiments, the system controller controls all activities of the processing system. The system controller executes system control software including instruction sets to control the time course of the processing steps enumerated above and other parameters of the particular process. In other embodiments, other computer programs, instruction codes, or programs stored in a memory device coupled to the controller may be used.
通常，有一和該系統控制器連接的使用者介面。該使用者介面包含一顯示螢幕、顯示製程條件的圖示軟體，以及使用者輸入裝置(例如指標裝置、鍵盤、觸控螢幕、麥克風等。)Typically, there is a user interface to the system controller. The user interface includes a display software for displaying screens, displaying process conditions, and user input devices (eg, indicator devices, keyboards, touch screens, microphones, etc.).
用以控制上述操作的電腦程式碼可用任何習用之電腦可讀程式語言寫入，例如組合語言、C、C++、巴斯卡程式語言、福傳程式語言或其他。編成的目的碼或指令碼被該處理器執行，以實現在該程式中所指定的任務。The computer code used to control the above operations can be written in any conventional computer readable programming language, such as a combined language, C, C++, Bascal programming language, spoofing language or the like. The programmed object code or instruction code is executed by the processor to implement the tasks specified in the program.
監控過程的信號由該系統控制器之類比及/或數位輸入連接器提供。用於控制過程的信號由處理系統之類比及數位輸出連接器輸出。微影圖案 化 The signals of the monitoring process are provided by analog and/or digital input connectors of the system controller. The signals used to control the process are output by the analog system of the processing system and the digital output connector. Lithographic patterning
上述之該設備/處理，可連同微影圖案化的工具或製程一起使用，例如用於半導體裝置、顯示器、LEDs、太陽能平板以及類似物的加工或製造。典型地但非必要地，此類工具/製程在共同的製造場所中被一起使用或操作。薄膜的微影圖案化典型地包括一些或全部下述之步驟，每項步驟藉由若干合理的工具而促成:(1) 使用旋塗或噴塗工具塗佈光阻劑於工件(即基板)上；(2) 使用熱板或熔爐或UV固化工具使光阻劑固化；(3) 使用如晶圓步進器的工具暴露該光阻劑到可見光或UV光或X光；(4) 使用如濕式清潔台的工具使該光阻劑顯影以選擇性地移除光阻劑並藉此使之圖案化；(5) 使用乾式或電漿輔助蝕刻工具轉移該光阻劑圖案到下伏的薄膜或工件中；以及(6) 使用如RF或微波電漿光阻剝離器的工具移除該光阻劑。其他實施例 The apparatus/process described above can be used in conjunction with a lithographically patterned tool or process, such as for the processing or fabrication of semiconductor devices, displays, LEDs, solar panels, and the like. Typically, but not necessarily, such tools/processes are used or operated together in a common manufacturing facility. The lithographic patterning of a film typically includes some or all of the following steps, each step being facilitated by a number of reasonable tools: (1) coating the photoresist onto the workpiece (ie, the substrate) using a spin coating or spray tool (2) curing the photoresist using a hot plate or furnace or UV curing tool; (3) exposing the photoresist to visible or UV light or X-ray using a tool such as a wafer stepper; (4) using A tool of the wet cleaning station develops the photoresist to selectively remove the photoresist and thereby pattern it; (5) transferring the photoresist pattern to the underside using a dry or plasma assisted etching tool In the film or workpiece; and (6) the photoresist is removed using a tool such as an RF or microwave plasma photoresist stripper. Other embodiments
雖然本文呈現並描述本發明之例示性實施例與應用，但可能有許多變化與修改仍落入本發明之精神、範疇、概念內，且本技術領域中具有通常知識者在觀察本案之後這些變化將變得明顯。因此，本文之實施例應視為例示性(而非限制性)，且本發明不限於本文中所給定的細節，而可在隨附申請專利範圍之範疇與等價態樣內被修改。While the exemplary embodiments and applications of the present invention have been shown and described herein, many variations and modifications are possible within the spirit, scope and concept of the invention, and those skilled in the art Will become obvious. Therefore, the embodiments of the present invention are to be considered as illustrative and not restrictive, and the invention is not limited to the details given herein, and may be modified within the scope and equivalents of the appended claims.
100‧‧‧設備
101‧‧‧杯體
103‧‧‧錐體
104‧‧‧撐桿
105‧‧‧頂板
106‧‧‧主軸
107‧‧‧馬達
109‧‧‧防濺裙
110‧‧‧間隔部件
111‧‧‧晶圓固持器
115‧‧‧電鍍單元
117‧‧‧電鍍腔室
119‧‧‧陽極
131‧‧‧入口管
153‧‧‧擴散器/膜片
155‧‧‧入口噴嘴
157‧‧‧腔室
159‧‧‧沖洗排水管路
161‧‧‧電鍍溶液回流管路
163‧‧‧沖洗噴嘴
165‧‧‧內部堰
167‧‧‧外部堰
201‧‧‧杯體
203‧‧‧錐體
208‧‧‧指狀物
212‧‧‧唇形密封
300‧‧‧抓斗
302‧‧‧組件
304‧‧‧彈性唇形密封
308‧‧‧凸出部
310‧‧‧接觸元件
312‧‧‧暴露部分
313‧‧‧暴露部分
314‧‧‧分配匯流排
316‧‧‧導電板
322‧‧‧接觸元件
324‧‧‧唇形密封
400‧‧‧組件
402‧‧‧唇形密封
404‧‧‧接觸元件
406‧‧‧基板
500‧‧‧抓斗部分
502‧‧‧唇形密封
503‧‧‧彈性支撐邊緣
504‧‧‧密封凸出部
505‧‧‧彈性上部部分
506‧‧‧內側表面
507‧‧‧頂表面
508‧‧‧接觸元件
509‧‧‧基板
510‧‧‧錐體
511‧‧‧表面
512‧‧‧表面
602‧‧‧區塊
604‧‧‧區塊
606‧‧‧區塊
608‧‧‧區塊
610‧‧‧操作
612‧‧‧區塊
614‧‧‧區塊
616‧‧‧區塊
700‧‧‧組件
701‧‧‧杯底(元件)
703‧‧‧彈性密封(元件)
704‧‧‧凸出部
705‧‧‧(電)接觸元件/接觸環
706‧‧‧指狀物
707‧‧‧緊固元件
709‧‧‧凹槽
711‧‧‧主體部分
713‧‧‧力矩臂
721‧‧‧導電板
723‧‧‧栓
724‧‧‧栓孔
725‧‧‧絕緣元件
727‧‧‧錐體
731‧‧‧基板100‧‧‧ Equipment
101‧‧‧ cup body
103‧‧‧ cone
104‧‧‧ poles
105‧‧‧ top board
106‧‧‧ Spindle
107‧‧‧Motor
109‧‧‧ splash skirt
110‧‧‧ Spacer parts
111‧‧‧Wafer Holder
115‧‧‧ plating unit
117‧‧‧ plating chamber
119‧‧‧Anode
131‧‧‧Inlet pipe
153‧‧‧Diffuser/diaphragm
155‧‧‧ inlet nozzle
157‧‧‧室
159‧‧‧Draining drainage line
161‧‧‧Electroplating solution return line
163‧‧‧Flipping nozzle
165‧‧‧Internal 堰
167‧‧‧External information
201‧‧‧ cup body
203‧‧‧ cone
208‧‧‧ fingers
212‧‧‧Lip seal
300‧‧‧ Grab
302‧‧‧ components
304‧‧‧Elastic lip seal
308‧‧‧ protruding parts
310‧‧‧Contact elements
312‧‧‧ exposed part
313‧‧‧ exposed part
314‧‧‧Distribution busbar
316‧‧‧ Conductive plate
322‧‧‧Contact elements
324‧‧‧Lip seal
400‧‧‧ components
402‧‧‧Lip seal
404‧‧‧Contact elements
406‧‧‧Substrate
500‧‧‧ Grab section
502‧‧‧Lip seal
503‧‧‧elastic support edge
504‧‧‧ Sealing bulge
505‧‧‧elastic upper part
506‧‧‧ inside surface
507‧‧‧ top surface
508‧‧‧Contact elements
509‧‧‧Substrate
510‧‧‧ cone
511‧‧‧ surface
512‧‧‧ surface
602‧‧‧ Block
604‧‧‧ Block
606‧‧‧ Block
608‧‧‧ Block
610‧‧‧ operation
612‧‧‧ Block
614‧‧‧ Block
616‧‧‧ Block
700‧‧‧ components
701‧‧‧ cup bottom (component)
703‧‧‧Elastic seal (component)
704‧‧‧Protruding
705‧‧‧(electric) contact element / contact ring
706‧‧‧ fingers
707‧‧‧ fastening elements
709‧‧‧ Groove
711‧‧‧ body part
713‧‧‧ torque arm
721‧‧‧ Conductive plate
723‧‧‧ tied
724‧‧‧Bolt hole
725‧‧‧Insulation components
727‧‧‧ cone
731‧‧‧Substrate
圖1為用於電化學地處理半導體晶圓之晶圓固持及定位設備之透視圖。1 is a perspective view of a wafer holding and positioning apparatus for electrochemically processing semiconductor wafers.
圖2為具有以複數可撓性指狀物製成之接觸環之抓斗組件的剖面示意圖。2 is a schematic cross-sectional view of a grab assembly having a contact ring made of a plurality of flexible fingers.
圖3A為具有整合式接觸元件之唇形密封組件之抓斗組件的剖面示意圖。3A is a cross-sectional view of a grapple assembly having a lip seal assembly with integrated contact elements.
圖3B為具有整合式接觸元件之不同唇形密封組件之另一抓斗組件的剖面示意圖。3B is a cross-sectional view of another grab assembly of a different lip seal assembly having integrated contact elements.
圖4A為具有可撓性接觸元件之唇形密封組件的剖面示意圖。4A is a schematic cross-sectional view of a lip seal assembly having a flexible contact element.
圖4B圖示形成與半導體基板介接之保形接觸表面的圖4A之唇形密封組件之剖面示意圖。4B illustrates a cross-sectional view of the lip seal assembly of FIG. 4A forming a conformal contact surface that interfaces with a semiconductor substrate.
圖5A為經配置以將半導體基板對準於抓斗組件中之唇形密封組件的剖面示意圖。5A is a cross-sectional view of a lip seal assembly configured to align a semiconductor substrate in a grab assembly.
圖5B為圖5A之唇形密封組件之剖面示意圖，其中抓斗組件之錐體的表面對唇形密封組件之上表面施壓。Figure 5B is a cross-sectional view of the lip seal assembly of Figure 5A with the surface of the cone of the grapple assembly applying pressure to the upper surface of the lip seal assembly.
圖5C為圖5A及圖5B之唇形密封組件之剖面示意圖，其中抓斗組件之錐體的表面推動唇形密封之上表面及半導體基板兩者。5C is a cross-sectional view of the lip seal assembly of FIGS. 5A and 5B with the surface of the cone of the grapple assembly pushing the upper surface of the lip seal and the semiconductor substrate.
圖6為說明電鍍半導體基板之方法之流程圖。Figure 6 is a flow chart illustrating a method of plating a semiconductor substrate.
圖7A為具有杯底元件、彈性環、及接觸環的杯體組件之剖面示意圖。7A is a schematic cross-sectional view of a cup assembly having a cup bottom member, an elastic ring, and a contact ring.
圖7B呈現圖7A所示之剖面示意圖的放大圖。Fig. 7B is an enlarged view showing a schematic cross-sectional view of Fig. 7A.
圖7C呈現圖7A所繪之剖面圖的透視圖。Figure 7C presents a perspective view of the cross-sectional view depicted in Figure 7A.
圖7D呈現圖7A-7C所示之杯體組件的實質環狀部分的展開透視圖。Figure 7D presents an expanded perspective view of the substantially annular portion of the cup assembly illustrated in Figures 7A-7C.
圖7E呈現顯示環狀部分之剖面的圖7D所示之杯體組件的放大透視圖。Figure 7E presents an enlarged perspective view of the cup assembly of Figure 7D showing a section of the annular portion.
圖7F呈現圖7D-7E所示之杯體組件之進一步的放大透視圖。Figure 7F presents a further enlarged perspective view of the cup assembly shown in Figures 7D-7E.
圖7G-7I呈現類似於圖7D-7F所示之透視圖的展開圖，但圖示出，接觸環元件與杯體組件的其他部分(垂直地)分開。Figures 7G-7I present an expanded view similar to the perspective view shown in Figures 7D-7F, but showing that the contact ring elements are separated (vertically) from the other portions of the cup assembly.
700‧‧‧組件 700‧‧‧ components
701‧‧‧杯底(元件) 701‧‧‧ cup bottom (component)
703‧‧‧彈性密封(元件) 703‧‧‧Elastic seal (component)
705‧‧‧(電)接觸元件/接觸環 705‧‧‧(electric) contact element / contact ring
711‧‧‧主體部分 711‧‧‧ body part
721‧‧‧導電板 721‧‧‧ Conductive plate
723‧‧‧栓 723‧‧‧ tied
725‧‧‧絕緣元件 725‧‧‧Insulation components
727‧‧‧錐體 727‧‧‧ cone
731‧‧‧基板 731‧‧‧Substrate
Claims (22)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462085171P | 2014-11-26 | 2014-11-26 | |
| US62/085,171 | 2014-11-26 | ||
| US14/685,526 | 2015-04-13 | ||
| US14/685,526 US9988734B2 (en) | 2011-08-15 | 2015-04-13 | Lipseals and contact elements for semiconductor electroplating apparatuses |
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| Publication Number | Publication Date |
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| TW201629275A true TW201629275A (en) | 2016-08-16 |
| TWI681082B TWI681082B (en) | 2020-01-01 |
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| TW108143043A TWI702311B (en) | 2014-11-26 | 2015-11-25 | Lipseals and contact elements for semiconductor electroplating apparatuses |
| TW104139051A TWI681082B (en) | 2014-11-26 | 2015-11-25 | Lipseals and contact elements for semiconductor electroplating apparatuses |
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| TW108143043A TWI702311B (en) | 2014-11-26 | 2015-11-25 | Lipseals and contact elements for semiconductor electroplating apparatuses |
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| JP (1) | JP6745103B2 (en) |
| KR (3) | KR102453908B1 (en) |
| CN (2) | CN105624754B (en) |
| TW (2) | TWI702311B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180251907A1 (en) * | 2017-03-01 | 2018-09-06 | Lam Research Corporation | Wide lipseal for electroplating |
| JP6963524B2 (en) * | 2018-03-20 | 2021-11-10 | キオクシア株式会社 | Electroplating equipment |
| JP7471778B2 (en) * | 2019-03-29 | 2024-04-22 | 株式会社日本マイクロニクス | Probe Card |
| KR20220075236A (en) * | 2019-10-04 | 2022-06-07 | 램 리써치 코포레이션 | Wafer shielding to prevent lip seal precipitation (PLATE-OUT) |
| KR20220107012A (en) * | 2019-11-27 | 2022-08-01 | 램 리써치 코포레이션 | Edge removal for through-resist plating |
| JP7242516B2 (en) * | 2019-12-13 | 2023-03-20 | 株式会社荏原製作所 | substrate holder |
| KR102493634B1 (en) * | 2021-10-18 | 2023-02-06 | 가부시키가이샤 에바라 세이사꾸쇼 | Plating method and plating device |
| CN113846363B (en) * | 2021-10-27 | 2022-09-23 | 上海戴丰科技有限公司 | Wafer electroplating hanger |
| JP7264545B1 (en) | 2022-02-22 | 2023-04-25 | 有限会社クズハラゴム | Partial plating jig |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6610190B2 (en) * | 2000-11-03 | 2003-08-26 | Nutool, Inc. | Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate |
| US7033465B1 (en) * | 2001-11-30 | 2006-04-25 | Novellus Systems, Inc. | Clamshell apparatus with crystal shielding and in-situ rinse-dry |
| US6755946B1 (en) * | 2001-11-30 | 2004-06-29 | Novellus Systems, Inc. | Clamshell apparatus with dynamic uniformity control |
| US6550484B1 (en) * | 2001-12-07 | 2003-04-22 | Novellus Systems, Inc. | Apparatus for maintaining wafer back side and edge exclusion during supercritical fluid processing |
| JP3940648B2 (en) * | 2002-08-07 | 2007-07-04 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | Wafer plating equipment |
| US7087144B2 (en) | 2003-01-31 | 2006-08-08 | Applied Materials, Inc. | Contact ring with embedded flexible contacts |
| US7005379B2 (en) * | 2004-04-08 | 2006-02-28 | Micron Technology, Inc. | Semiconductor processing methods for forming electrical contacts |
| US7985325B2 (en) * | 2007-10-30 | 2011-07-26 | Novellus Systems, Inc. | Closed contact electroplating cup assembly |
| JP5237924B2 (en) * | 2008-12-10 | 2013-07-17 | ノベルス・システムズ・インコーポレーテッド | Base plate and electroplating apparatus |
| US9512538B2 (en) * | 2008-12-10 | 2016-12-06 | Novellus Systems, Inc. | Plating cup with contoured cup bottom |
| US9228270B2 (en) * | 2011-08-15 | 2016-01-05 | Novellus Systems, Inc. | Lipseals and contact elements for semiconductor electroplating apparatuses |
| US9309603B2 (en) * | 2011-09-14 | 2016-04-12 | Applied Materials, Inc | Component cleaning in a metal plating apparatus |
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| CN109137029B (en) | 2021-01-01 |
| TWI681082B (en) | 2020-01-01 |
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| CN105624754A (en) | 2016-06-01 |
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| TW202010881A (en) | 2020-03-16 |
| KR102641458B1 (en) | 2024-02-28 |
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| KR102453908B1 (en) | 2022-10-11 |
| CN109137029A (en) | 2019-01-04 |
| KR20160063252A (en) | 2016-06-03 |
| KR20220141268A (en) | 2022-10-19 |
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