TW201624655A - Ball-bond arrangement - Google Patents

Ball-bond arrangement Download PDF

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Publication number
TW201624655A
TW201624655A TW104122812A TW104122812A TW201624655A TW 201624655 A TW201624655 A TW 201624655A TW 104122812 A TW104122812 A TW 104122812A TW 104122812 A TW104122812 A TW 104122812A TW 201624655 A TW201624655 A TW 201624655A
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Taiwan
Prior art keywords
copper
core
ball
palladium
wire
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TW104122812A
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Chinese (zh)
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穆拉利 薩蘭加帕尼
兮 張
平熹 楊
歐根 米爾克
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賀利氏德國有限責任兩合公司
新加坡賀利氏材料私人有限公司
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Publication of TW201624655A publication Critical patent/TW201624655A/en

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Abstract

A ball-bond arrangement comprising an aluminum bond pad of a semiconductor device and a wire ball-bonded to the aluminum bond pad, wherein the wire has a diameter of 10 to 80 [mu]m and comprises a core consisting of a copper alloy consisting of 0.05 to 3 wt.-% of palladium and/or platinum with copper as the remainder to make up 100 wt.-%.

Description

球型接合裝置 Ball joint device

本發明係關於球型接合裝置，其包含半導體器件之鋁接合墊及球型接合至鋁接合墊之銅合金線。 The present invention relates to a ball bonding apparatus comprising an aluminum bonding pad of a semiconductor device and a copper alloy wire ball-bonded to an aluminum bonding pad.

在電子及微電子應用中使用接合線係眾所周知之最新技術。雖然起初自金製作接合線，但現如今使用較便宜材料例如銅。雖然銅線提供極優良電及熱傳導性，但銅線之接合具有其挑戰性。 The most recent well-known technology for bonding wires is used in electronic and microelectronic applications. Although bond wires were originally made from gold, nowadays less expensive materials such as copper are used. Although copper wire provides excellent electrical and thermal conductivity, the bonding of copper wires is challenging.

已證實，銅線球型接合至半導體器件(如(例如)積體晶片)之鋁接合墊之球型接合裝置傾向於隨時間減弱，此乃因在鋁接合墊表面與經球型接合銅線表面之間之球型接合接觸區域內(或簡言之，在接面或在球型接合界面處)銅鋁化物界面層不合意地形成並生長。 It has been confirmed that a ball bonding device in which a copper ball is bonded to an aluminum bonding pad of a semiconductor device such as, for example, an integrated wafer tends to weaken with time due to the surface of the aluminum bonding pad and the ball-bonded copper wire. The copper aluminide interfacial layer is undesirably formed and grown within the spherical bond contact region between the surfaces (or in brief, at the junction or at the ball joint interface).

本文使用術語「鋁接合墊」。其意指接合墊，具體而言半導體器件之接合墊，其由鋁或由鋁含量為(例如)至少98.5wt%(重量%)之鋁合金組成。極常用於鋁接合墊之鋁合金之實例係鋁與1wt%之矽及0.5wt%之銅(Al1Si0.5Cu)之合金或與0.5wt%之銅(Al0.5Cu)之合金。鋁接合墊具有例如0.6μm至4μm之整體厚度。術語「鋁接合墊」亦意指並非鋁或鋁合金之金屬接合墊，其具有(例如)0.5μm至1μm厚度之外部鋁頂層。 The term "aluminum bond pad" is used herein. It means a bonding pad, in particular a bonding pad of a semiconductor device, which consists of aluminum or an aluminum alloy having an aluminum content of, for example, at least 98.5 wt% (wt%). An example of an aluminum alloy which is very commonly used for an aluminum bonding pad is an alloy of aluminum with 1 wt% of niobium and 0.5 wt% of copper (Al1Si0.5Cu) or with 0.5 wt% of copper (Al0.5Cu). The aluminum bonding pad has an overall thickness of, for example, 0.6 μm to 4 μm. The term "aluminum bond pad" also means a metal bond pad that is not an aluminum or aluminum alloy having an outer aluminum top layer having a thickness of, for example, 0.5 μm to 1 μm.

本文使用術語「銅鋁化物」。其應意指Cu9Al4(68.3原子% Cu及31.7原子% Al)及CuAl2(34原子% Cu及66原子% Al)相及Cu0.01Al0.99(9.11原子% Cu及90.88原子% Al)、Cu0.78Al0.22(78.2原子% Cu及21.84原子% Al)、Cu0.84Al0.16(82.6原子% Cu及17.4原子% Al)、Cu0.85Al0.15 (84.5原子% Cu及15.5原子% Al)及Cu0.96Al0.04(97.3原子% Cu及2.7原子% Al)介穩相。該等原子%值源於在各別銅-鋁相處進行之SEM-EDX量測。 The term "copper aluminide" is used herein. It shall mean Cu 9 Al 4 (68.3 at% Cu and 31.7 at% Al) and CuAl 2 (34 at% Cu and 66 at% Al) phases and Cu 0.01 Al 0.99 (9.11 at% Cu and 90.88 at% Al) Cu 0.78 Al 0.22 (78.2 at% Cu and 21.84 at% Al), Cu 0.84 Al 0.16 (82.6 at% Cu and 17.4 at% Al), Cu 0.85 Al 0.15 (84.5 at% Cu and 15.5 at% Al), and Cu 0.96 Al 0.04 (97.3 atom% Cu and 2.7 atom% Al) metastable phase. The atomic % values are derived from SEM-EDX measurements taken at the respective copper-aluminum phases.

上文所提及銅鋁化物界面層之形成及生長係老化現象。顯而易見地，固態反應發生，即銅自球型接合或線擴散且鋁自接合墊擴散。時間過得愈久或球型接合裝置變得愈舊，銅鋁化物形成愈多，如可觀察到銅鋁化物層不僅厚度增長且面積亦增長。換言之，球型接合裝置之操作時間愈長，銅鋁化物形成愈多。溫度亦有影響，其意指在操作中接面溫度愈高，即在操作期間在球型接合界面處之溫度愈高，銅鋁化物層生長愈快。據信操作中之球型接合裝置之接面溫度處於100℃至300℃或100℃至250℃範圍內。 The formation of the copper aluminide interfacial layer and the aging phenomenon of the growth system mentioned above. Obviously, a solid state reaction occurs, that is, copper self-ball bonding or line diffusion and aluminum diffuses from the bonding pad. The longer the time passes or the older the ball joint device becomes, the more copper aluminide is formed, as can be observed that the copper aluminide layer not only increases in thickness but also increases in area. In other words, the longer the operation time of the ball joint device, the more copper aluminide is formed. Temperature also has an effect, which means that the higher the junction temperature during operation, i.e., the higher the temperature at the ball joint interface during operation, the faster the copper aluminide layer grows. It is believed that the junction temperature of the ball jointing device in operation is in the range of 100 ° C to 300 ° C or 100 ° C to 250 ° C.

可藉由銅線球型接合至鋁接合墊之球型接合裝置之經橫切試樣於高倍光學顯微鏡(50×至1200×放大率)下觀察之色彩對比成像來測定或表徵此界面銅鋁化物層之性質及厚度。選擇在500×至1000×範圍內之放大率係有利的。當在此顯微鏡下查看此經橫切球型接合裝置時，此銅鋁化物層表現為佔兩個區域之總面積80面積%至100面積%之灰色區域及佔0面積%至20面積%之黃色區域。 The interface copper-aluminum can be determined or characterized by cross-sectional imaging of a cross-linked sample of a ball-bonding device bonded to a copper bond pad to a high-power optical microscope (50× to 1200× magnification). The nature and thickness of the layer. It is advantageous to select a magnification in the range of 500 x to 1000 x. When the cross-cut ball joint device is viewed under the microscope, the copper aluminide layer exhibits a gray area of 80% by area to 100% area of the total area of the two regions and accounts for 0% to 20% by area. Yellow area.

可如在下文中概述以更多細節實行界面銅鋁化物層之表徵。 Characterization of the interface copper aluminide layer can be performed in more detail as outlined below.

可藉由使用掃描電子顯微鏡-能量色散X射線分析(SEM-EDX)測定元素銅及鋁在界面銅鋁化物層中之存在及其定量比率。此方法為熟習此項技術者所熟知且並不需要進一步說明。舉例而言，可自含有灰色及/或黃色銅鋁化物相之球型接合界面聚焦離子束(FIB)切割20μm×10μm×100nm之試樣。可使用(例如)來自FEI之Helios Nanolab 450S Dual Beam FIB儀器(在2kV至30kV之電壓與23pA至21nA之束電流下)實施FIB橫切及SEM成像。 The presence of elemental copper and aluminum in the interfacial copper aluminide layer and its quantitative ratio can be determined by scanning electron microscopy-energy dispersive X-ray analysis (SEM-EDX). This method is well known to those skilled in the art and does not require further elaboration. For example, a 20 μm x 10 μm x 100 nm sample can be cut from a spherical junction interface focused ion beam (FIB) containing a gray and/or yellow copper aluminide phase. FIB transection and SEM imaging can be performed using, for example, a Helios Nanolab 450S Dual Beam FIB instrument from FEI (at a beam current of 2 kV to 30 kV and a beam current of 23 pA to 21 nA).

該FIB切割試樣可進一步用於透射電子顯微鏡(TEM)研究。可使 用(例如)JEOL JEM2100 TEM在200kV之加速電壓與105μA之發射電流下實施FIB切割件之透射成像及繞射圖。可使用(例如)JEOL TEM觀察銅鋁化物之奈米級晶粒及晶界。此外，可記錄晶粒之繞射圖。可使用Hanawalt搜索法使用來自Inorganic Crystal Structure Database(ICSD)之粉末繞射檔案及International Centre for Diffraction Data(ICDD)參考檔案自繞射圖鑑別晶格類型及原子參數。基本上，粉末繞射檔案中報告之三個強峰須匹配ICSD或ICDD記錄之化合物晶體結構之所報告繞射平面。可使用(例如)配備有EDX檢測器之FEI Titan 80-300TEM在200kV之加速電壓與89μA之發射電流下實施銅鋁化物相之組成分析。透射電子顯微鏡(TEM)繞射圖分析主要鑑別灰色區域中之Cu9Al4、CuAl2及Cu0.01Al0.99及黃色顏色區域中之Cu0.78Al0.22、Cu0.84Al0.16、Cu0.85Al0.15及Cu0.96Al0.04。 The FIB cut sample can be further used in transmission electron microscopy (TEM) studies. Transmissive imaging and diffraction patterns of FIB cuts can be performed using, for example, a JEOL JEM2100 TEM at an acceleration voltage of 200 kV and an emission current of 105 μA. Nanocrystalline grains and grain boundaries of copper aluminide can be observed using, for example, JEOL TEM. In addition, a diffraction pattern of the grains can be recorded. The lattice type and atomic parameters can be discriminated from the diffraction pattern using the Hanawalt search method using a powder diffraction file from the Inorganic Crystal Structure Database (ICSD) and an International Centre for Diffraction Data (ICDD) reference file. Basically, the three strong peaks reported in the powder diffraction file must match the reported diffraction plane of the crystal structure of the compound recorded by ICSD or ICDD. The composition analysis of the copper aluminide phase can be performed using, for example, an FEI Titan 80-300 TEM equipped with an EDX detector at an acceleration voltage of 200 kV and an emission current of 89 μA. Transmission electron microscopy (TEM) diffraction pattern analysis mainly identified Cu 9 Al 4 , CuAl 2 and Cu 0.01 Al 0.99 in the gray region and Cu 0.78 Al 0.22 , Cu 0.84 Al 0.16 , Cu 0.85 Al 0.15 and Cu in the yellow color region 0.96 Al 0.04 .

可在本發明球型接合裝置之服務年限期間監測銅鋁化物層隨時間之形成。然而，有加速老化測試方法，其容許藉由使新形成之球型接合裝置經受總共(例如)在125℃至250℃之目標溫度下500小時至2000小時，或在實施例中在250℃之目標溫度下2000小時之連續或間斷熱處理來模擬銅鋁化物層隨時間之形成。熟習此項技術者將此熱老化測試稱為所謂的高溫儲存測試或高溫可靠性測試。此高溫儲存測試與真實情況緊密關聯，此乃因如已所述，據信在正常操作期間接面溫度達到或處於100℃至300℃或100℃至250℃範圍內。然後可針對界面銅鋁化物定性及定量地分析經如此人工熱老化之球型接合裝置。 The formation of the copper aluminide layer over time can be monitored during the service life of the ball joint apparatus of the present invention. However, there is an accelerated burn-in test method that allows for the newly formed ball joint device to be subjected to a total of, for example, a target temperature of 125 ° C to 250 ° C for 500 hours to 2000 hours, or in the embodiment at 250 ° C. A continuous or intermittent heat treatment of 2000 hours at the target temperature simulates the formation of the copper aluminide layer over time. Those skilled in the art refer to this heat aging test as a so-called high temperature storage test or a high temperature reliability test. This high temperature storage test is closely related to the real situation because, as already stated, it is believed that the junction temperature reaches or is in the range of 100 ° C to 300 ° C or 100 ° C to 250 ° C during normal operation. The ball jointing apparatus thus subjected to such artificial heat aging can then be qualitatively and quantitatively analyzed for the interface copper aluminide.

現已發現，上文所提及界面銅鋁化物層之不期望形成及生長可藉由用銅合金線取代上文所提及球型接合裝置中之銅線而顯著地減慢，該銅合金係由0.05wt%至3wt%之鈀及/或鉑與作為剩餘物補足100wt%之銅組成。以鈀作為合金化貴金屬較佳。 It has been found that the undesirable formation and growth of the interfacial copper aluminide layer referred to above can be significantly slowed by replacing the copper wire in the ball bonding apparatus mentioned above with a copper alloy wire which is significantly slowed down. It is composed of 0.05% by weight to 3% by weight of palladium and/or platinum and 100% by weight of copper as a residue. Palladium is preferred as the alloyed precious metal.

因此，本發明係關於一種球型接合裝置，其包含半導體器件之 鋁接合墊及球型接合至該鋁接合墊之線，其中該線具有10μm至80μm之直徑並包含由銅合金組成之芯，該銅合金由0.05wt%至3wt%、較佳1wt%至2wt%、最佳1.2wt%至1.3wt%之鈀及/或鉑與作為剩餘物補足100wt%之銅組成。以鈀作為合金化貴金屬較佳。 Accordingly, the present invention is directed to a ball bonding apparatus including a semiconductor device An aluminum bond pad and a wire bonded to the aluminum bond pad, wherein the wire has a diameter of 10 μm to 80 μm and comprises a core composed of a copper alloy, the copper alloy being from 0.05 wt% to 3 wt%, preferably 1 wt% to 2 wt% %, preferably 1.2 wt% to 1.3 wt% of palladium and/or platinum is composed of 100 wt% of copper as a residue. Palladium is preferred as the alloyed precious metal.

本發明亦係關於用於製造本發明球型接合裝置之方法。 The invention also relates to a method for making a ball joint device of the invention.

在下文中，片語「由0.05wt%至3wt%之鈀及/或鉑與作為剩餘物補足100wt%之銅組成之銅合金」亦簡稱為「銅合金」。 Hereinafter, the phrase "a copper alloy composed of 0.05% by weight to 3% by weight of palladium and/or platinum and 100% by weight of copper as a residue" is also simply referred to as "copper alloy".

本文使用片語「作為剩餘物補足100wt%之銅」。其應意指銅係銅合金中之主要組份。為避免誤解，此不應理解為排除其他並未明確指出且由於當前技術條件可能進入銅合金(例如由於在製造期間無意但不可避免之併入)之元素。換言之，此等其他元素可作為不可避免之雜質存於合金中，然而僅以(例如)>0wt-ppm至100wt-ppm之極小總量存在。無論如何，此等不可避免之雜質並非故意添加或引入至銅合金形成組合物中。就此而言，片語「作為剩餘物補足100wt%之銅」意指未能補足銅合金之100wt%之wt%比例係由銅加上該等不可避免之雜質(若後者存在)組成。 This article uses the phrase "to make up 100% by weight of copper as a residue". It shall mean the main component of the copper-based copper alloy. To avoid misunderstanding, this should not be construed as excluding other elements that are not explicitly indicated and that may enter the copper alloy due to current technical conditions (eg, due to inadvertent but inevitable incorporation during manufacturing). In other words, these other elements may be present in the alloy as unavoidable impurities, however only present in very small amounts, for example, from > 0 wt-ppm to 100 wt-ppm. In any event, such unavoidable impurities are not intentionally added or introduced into the copper alloy forming composition. In this regard, the phrase "complementing 100% by weight of copper as a residue" means that the ratio of 100% by weight of the copper alloy that fails to make up the copper alloy is composed of copper plus such unavoidable impurities (if the latter is present).

可藉由熟習金屬合金技術者已知之習用方法製備銅合金，例如藉由使銅及鈀及/或鉑以期望之比率一起熔化。在此方法中，可能使用習用銅-鈀-鉑、銅-鈀或銅-鉑母合金。可使用(例如)感應電爐實施熔化方法且在真空下或在惰性氣體氣氛下工作係有利的。所用材料可具有(例如)99.99wt%及以上之純度級別。銅合金熔體通常在室溫模具中鑄造，在其中其冷卻並凝固。 Copper alloys can be prepared by conventional methods known to those skilled in the art of metal alloys, for example by melting together copper and palladium and/or platinum in a desired ratio. In this method, it is possible to use a conventional copper-palladium-platinum, copper-palladium or copper-platinum mother alloy. It is advantageous to carry out the melting process using, for example, an induction furnace and to operate under vacuum or under an inert gas atmosphere. The material used may have a purity level of, for example, 99.99 wt% or more. The copper alloy melt is typically cast in a room temperature mold where it cools and solidifies.

本發明球型接合裝置可藉由包含以下步驟之方法製作：(1)提供具有鋁接合墊之半導體器件及線，該線具有10μm至80 μm之直徑並包含由0.05wt%至3wt%之鈀及/或鉑與作為剩餘物補足100wt%之銅之合金組成之芯，及(2)將線球型接合至鋁接合墊。 The ball bonding apparatus of the present invention can be fabricated by a method comprising the steps of: (1) providing a semiconductor device having an aluminum bonding pad and a wire having a thickness of 10 μm to 80 The diameter of μm and comprises a core composed of 0.05 wt% to 3 wt% of palladium and/or platinum and an alloy of 100 wt% of copper as a residue, and (2) bonding a ball type to an aluminum bond pad.

銅合金線具有10μm至80μm之直徑並包含由銅合金組成之芯，該銅合金線可藉由包含以下步驟之方法製作：(a)提供銅合金之前體，(b)拉伸前體直至線達到10μm至80μm、較佳15μm至50μm之最終直徑；(c)將經拉伸線退火，及(d)將經退火線淬火。 The copper alloy wire has a diameter of 10 μm to 80 μm and comprises a core composed of a copper alloy which can be produced by a method comprising the steps of: (a) providing a copper alloy precursor, and (b) stretching the precursor to the wire. A final diameter of from 10 μm to 80 μm, preferably from 15 μm to 50 μm is achieved; (c) the stretched wire is annealed, and (d) the annealed wire is quenched.

在該方法之步驟(a)中提供銅合金之前體。 A copper alloy precursor is provided in step (a) of the method.

通常，此前體係呈具有(例如)2mm至25mm之直徑及(例如)5m至100m之長度之桿之形式。此桿可類似地或根據上文所揭示用於製備銅合金之方法來製作，即在適宜室溫模具中鑄造銅合金熔體，隨後冷卻並凝固。 Typically, the prior system is in the form of a rod having a diameter of, for example, 2 mm to 25 mm and a length of, for example, 5 m to 100 m. This rod can be made similarly or according to the method disclosed above for the preparation of a copper alloy by casting a copper alloy melt in a suitable room temperature mold, followed by cooling and solidification.

在該方法之步驟(b)中，在若干步驟中拉伸前體直至線達到10μm至80μm、較佳15μm至50μm之最終直徑。此線拉伸方法為熟習此項技術者所熟知。可採用習用碳化鎢及金剛石拉伸模並可採用習用拉伸潤滑劑以輔助拉伸。 In step (b) of the process, the precursor is drawn in several steps until the wire reaches a final diameter of from 10 μm to 80 μm, preferably from 15 μm to 50 μm. This line drawing method is well known to those skilled in the art. Conventional tungsten carbide and diamond drawing dies can be used and conventional stretching lubricants can be used to assist in stretching.

在該方法之步驟(c)中，將經拉伸線例如在570℃至750℃之目標溫度下退火(最終退火、分股退火)0.2秒至0.4秒。通常藉由將線以既定速度牽拉通過習用退火爐來實施退火，該退火爐通常呈既定長度之圓柱管之形式且具有經定義溫度剖面。在此過程中，可定義並設置退火時間/目標溫度參數。使用90vol%至96vol%惰性氣體：4vol%至10vol%氫氣混合物吹掃退火爐。95vol%惰性氣體：5vol%氫氣氣氛係較佳氣氛。惰性氣體可係氮及/或氬；通常，其係氮。較佳在處於43 min-1至125min-1、更佳43min-1至75min-1、最佳50min-1至63min-1範圍內之氣體交換速率(=氣體流動速率[升/min]：內爐容積[升])下實施吹掃。 In step (c) of the method, the drawn wire is annealed (final annealing, strand annealing) at a target temperature of, for example, 570 ° C to 750 ° C for 0.2 seconds to 0.4 seconds. Annealing is typically performed by pulling the wire through a conventional annealing furnace at a predetermined speed, typically in the form of a cylindrical tube of a predetermined length and having a defined temperature profile. During this process, the annealing time/target temperature parameters can be defined and set. The annealing furnace was purged using a 90 vol% to 96 vol% inert gas: 4 vol% to 10 vol% hydrogen mixture. 95 vol% inert gas: 5 vol% hydrogen atmosphere is a preferred atmosphere. The inert gas can be nitrogen and/or argon; typically, it is nitrogen. In preferred is 43 min -1 to 125min -1, more preferably 43min -1 to 75min -1, the rate of gas exchange within the optimal range of 50min -1 to 63min -1 (= gas flow rate [liters / min]: internal The purge is performed under the furnace volume [L].

在該方法之步驟(d)中，(例如)在水中將經退火線淬火。在實施例中，水可含有表面活性劑，例如0.01體積%至1體積%之表面活性劑。在水中淬火意指將經退火線自在步驟(c)中其達到之目標溫度立即或快速(即在0.2秒至0.4秒內)冷卻至室溫。 In step (d) of the process, the annealed wire is quenched, for example, in water. In an embodiment, the water may contain a surfactant, such as from 0.01% to 1% by volume of a surfactant. Quenching in water means cooling the room temperature to the desired temperature immediately or quickly (i.e., within 0.2 seconds to 0.4 seconds) from the target temperature reached in step (c).

用外周單層金屬塗層或不同金屬毗鄰層之多層塗層配備線可係有利的，其中該(等)金屬係選自由鈀、鉑、金及銀組成之群。在此實施例中，銅合金線之芯具有一表面，其中將2nm至500nm薄周圍單層金屬塗層或不同金屬毗鄰層之多層塗層疊加於芯之表面上，其中金屬或不同金屬係選自由鈀、鉑、金及銀組成之群，且其中單層或多層金屬塗層之總質量係相對於芯之總質量0.09wt%至2.5wt%。為將單層金屬塗層或不同金屬毗鄰層之多層塗層疊加至銅合金線之芯，在達到(例如)80μm至200μm範圍內之一特定線直徑之後立即中斷線拉伸方法之步驟(b)係有利的。然後可(例如)藉由電鍍施加周圍單層金屬塗層或不同金屬毗鄰層之多層塗層。其後繼續線拉伸方法之步驟(b)直至獲得10μm至80μm之最終線直徑。 It may be advantageous to equip the multilayer coating with a peripheral single layer metal coating or a plurality of different metal adjacent layers, wherein the (etc.) metal is selected from the group consisting of palladium, platinum, gold, and silver. In this embodiment, the core of the copper alloy wire has a surface in which a thin layer of a single layer of metal coating of 2 nm to 500 nm or a layer of a different layer of a different metal is superposed on the surface of the core, wherein the metal or different metal is selected A group of free palladium, platinum, gold, and silver, and wherein the total mass of the single or multiple layer metal coating is from 0.09 wt% to 2.5 wt% relative to the total mass of the core. In order to superimpose a single layer metal coating or a multilayer coating of adjacent layers of different metals to the core of the copper alloy wire, the step of the wire drawing method is interrupted immediately after reaching a specific wire diameter in the range of, for example, 80 μm to 200 μm ( b) is advantageous. A multilayer coating of a surrounding single layer metal coating or an adjacent layer of a different metal can then be applied, for example, by electroplating. Thereafter, the step (b) of the wire drawing method is continued until a final wire diameter of 10 μm to 80 μm is obtained.

將銅合金線球型接合至半導體器件之鋁接合墊。球型接合程序本身為熟習此項技術者所熟知且不包含方法學特性。可使用通常的球型接合設備。接合方法參數可係：接合力在(例如)22g至30g範圍內；超音波能在(例如)78mA至94mA範圍內；溫度在(例如)170℃至250℃範圍內；接觸速度在(例如)6μm/ms至10.5μm/ms範圍內。 A copper alloy wire is ball-bonded to an aluminum bond pad of a semiconductor device. The ball bonding process itself is well known to those skilled in the art and does not include methodological characteristics. A conventional ball joint device can be used. The joining method parameters may be: the joining force is in the range of, for example, 22 g to 30 g; the ultrasonic energy is in the range of, for example, 78 mA to 94 mA; the temperature is in the range of, for example, 170 ° C to 250 ° C; the contact speed is (for example) It is in the range of 6 μm/ms to 10.5 μm/ms.

與用99.99wt%純銅線產生之相同球型接合裝置相比，如此產生之本發明球型接合裝置展現顯著減小之在鋁接合墊表面與經球型接合銅合金線表面之間之球型接合接觸區域內產生界面銅鋁化物層之傾 向，即此銅鋁化物層之生長更慢。 Use The spherical bond device of the present invention thus produced exhibits a significantly reduced spherical bond contact between the surface of the aluminum bond pad and the surface of the ball bonded copper alloy wire as compared to the same ball bond device produced by a 99.99 wt% pure copper wire. The tendency to create an interfacial copper aluminide layer in the region is that the copper aluminide layer grows more slowly.

使用上文所提及分析方法已發現，在250℃下熱老化2000小時時，在鋁接合墊表面與經球型接合之具有20μm直徑之99.99wt%純銅線表面之間之球型接合接觸區域內，銅鋁化物之不期望界面層快速生長至10μm至15μm範圍內之厚度。形成100%黃色相，其中TEM繞射圖分析主要鑑別Cu0.84Al0.16、Cu0.85Al0.15及Cu0.96Al0.04相。與此相比，用本發明球型接合裝置實施之相同評估揭露僅2.5μm至4μm之薄銅鋁化物界面層，其包含灰色區域中之Cu9Al4、CuAl2及Cu0.01Al0.99及黃色區域中之Cu0.85Al0.15、Cu0.84Al0.16及Cu0.96Al0.04。此處亦可在球型接合接觸區域中觀察到Cu0.96Pd0.04(99.14原子% Cu及0.85原子% Pd)相。 Using the analytical methods mentioned above, it has been found that at the time of heat aging at 250 ° C for 2000 hours, the surface of the aluminum bond pad and the ball-shaped bond have a diameter of 20 μm. The undesired interfacial layer of copper aluminide rapidly grows to a thickness in the range of 10 μm to 15 μm in the spherical bond contact region between the 99.99 wt% pure copper wire surfaces. A 100% yellow phase was formed, in which TEM diffraction pattern analysis mainly identified Cu 0.84 Al 0.16 , Cu 0.85 Al 0.15 and Cu 0.96 Al 0.04 phases. In contrast, the same evaluation performed with the ball joint apparatus of the present invention revealed a thin copper aluminide interfacial layer of only 2.5 μm to 4 μm, which contained Cu 9 Al 4 , CuAl 2 and Cu 0.01 Al 0.99 and yellow in the gray region. Cu 0.85 Al 0.15 , Cu 0.84 Al 0.16 and Cu 0.96 Al 0.04 in the region. Here, a Cu 0.96 Pd 0.04 (99.14 at% Cu and 0.85 at% Pd) phase was also observed in the spherical joint contact region.

下列非限制性實例闡釋本發明。 The following non-limiting examples illustrate the invention.

實例Instance

將99.99wt%純度之銅桿在真空感應電爐中熔化並連續鑄造為8mm直徑之桿。在其他實例中，將少量Cu-15wt% Pd母合金添加至熔體以鑄造Cu-Pd合金：Cu0.01Pd、Cu0.05Pd、Cu0.5Pd、Cu1.0Pd、Cu1.25Pd、Cu2.0Pd、Cu3.0Pd、Cu5.0Pd。 A 99.99 wt% purity copper rod was melted in a vacuum induction furnace and continuously cast into a 8 mm diameter rod. In other examples, a small amount of Cu-15wt% Pd master alloy is added to the melt to cast a Cu-Pd alloy: Cu0.01Pd, Cu0.05Pd, Cu0.5Pd, Cu1.0Pd, Cu1.25Pd, Cu2.0Pd, Cu3 .0Pd, Cu5.0Pd.

此外，該等連續鑄造桿在室溫(25℃)下經冷拉線。使用碳化鎢模具拉伸粗線且使用金剛石模具進一步壓縮。在四個步驟中在不同拉伸速度下實施拉伸：在0.5m/s下自8mm至4mm且在1m/s下自4mm至0.8mm拉伸粗線，在4m/s下自0.8mm至0.16mm拉伸中間線，且在6m/s下自0.16mm至0.02mm拉伸細線。藉由使用基於水之潤滑劑輔助拉伸。粗線(>200μm之直徑)之模具壓縮比率係14%且細線(<200μm之直徑)之模具壓縮比率係8%。 In addition, the continuous casting rods are cold drawn at room temperature (25 ° C). The thick wire was drawn using a tungsten carbide mold and further compressed using a diamond die. Stretching was carried out at different stretching speeds in four steps: from 8 mm to 4 mm at 0.5 m/s and from 4 mm to 0.8 mm at 1 m/s, from 0.8 mm at 4 m/s The intermediate line was stretched by 0.16 mm, and the fine line was stretched from 0.16 mm to 0.02 mm at 6 m/s. The stretching is assisted by using a water based lubricant. The mold compression ratio of the thick line (>200 μm diameter) was 14% and the mold compression ratio of the thin line (<200 μm diameter) was 8%.

使Cu-Pd合金線在45μm之直徑及600℃下中間退火。99.99wt%純銅線未經中間退火。 The Cu-Pd alloy wire was annealed at a diameter of 45 μm and at 600 °C. 99.99 wt% pure copper wire is not annealed in the middle.

最後藉由使該線運行穿過習用退火爐及使用習用設備(包括捲軸、線軸、滑輪)來使該等線分股退火。退火時間係0.3s。分股退火溫度係600℃(純銅)及700℃(Cu-Pd合金)。用組成氣體(95vol% N2：5vol% H2)吹掃該爐。 Finally, the wire strands are annealed by running the wire through a conventional annealing furnace and using conventional equipment (including reels, spools, pulleys). The annealing time is 0.3 s. The strand annealing temperature is 600 ° C (pure copper) and 700 ° C (Cu-Pd alloy). The furnace was purged with a composition gas (95 vol% N 2 : 5 vol% H 2 ).

離開該爐後立即(即在0.3s內)將熱線在去離子水中淬火。 The hot wire was quenched in deionized water immediately after leaving the furnace (ie within 0.3 s).

將該線球型接合(接合力26g；超音波能86mA；溫度220℃；接觸速度7.6μm/ms)至積體晶片之1μm厚Al1Si0.5Cu接合墊並將如此產生之球型接合裝置人工熱老化，橫切並在光學顯微鏡下在500×放大率下評估。表1a及1b顯示老化條件(時間、目標溫度)及於純銅線及Cu1.25Pd線之球型接合界面觀察之銅鋁化物層之黃色及灰色相之厚度及面積分數。 The ball type bonding (bonding force 26g; ultrasonic energy 86 mA; temperature 220 ° C; contact speed 7.6 μm/ms) to a 1 μm thick Al1Si0.5Cu bonding pad of the integrated wafer and artificial heat of the ball joint device thus produced Aging, transection and evaluation under a light microscope at 500x magnification. Tables 1a and 1b show the aging conditions (time, target temperature) and the thickness and area fraction of the yellow and gray phases of the copper aluminide layer observed at the ball joint interface of the pure copper wire and the Cu1.25 Pd wire.

注釋：黃色及灰色相之總和可並非為100面積%；表中並未提及由Al1Si0.5Cu形成之面積%。 Note: The sum of the yellow and gray phases may not be 100 area%; the area % formed by Al1Si0.5Cu is not mentioned in the table.

表2顯示於使用20μm99.99wt%純銅線及具有不同Pd含量之Cu/Pd線製作之經熱老化(250℃下500小時)球型接合裝置之球型接合界面處，佔灰色及黃色銅鋁化物相之總面積之面積分數。 Table 2 shows the use of 20μm 99.99wt% pure copper wire and Cu/Pd wire with different Pd content, the ball-shaped joint interface of the heat-aged (500 hours at 250 °C) ball joint device, which occupies the total area of the gray and yellow copper aluminide phase Area score.

#：99.99wt%純銅 #: 99.99wt% pure copper

用上文所揭示分析方法實施灰色及黃色相之TEM成像及繞射圖分析。藉由Hanawalt搜索法自繞射圖、繞射之晶帶面、原子參數及組成鑑別不同銅鋁化物相。用純Cu線及用Cu1.25Pd線獲得之結果提供於表3中。 TEM imaging and diffraction pattern analysis of the gray and yellow phases were performed using the analytical methods disclosed above. The different copper aluminide phases were identified by the Hanawalt search method from the diffraction pattern, the diffractive crystal plane, atomic parameters and composition. The results obtained with pure Cu wire and with Cu1.25 Pd wire are provided in Table 3.

*)由於SEM-EDX測試極限與粉末繞射檔案之偏差 *) Due to the deviation of the SEM-EDX test limit from the powder diffraction file

Claims (16)

一種球型接合裝置，其包含半導體器件之鋁接合墊及球型接合至該鋁接合墊之線，其中該線具有10μm至80μm之直徑並包含由銅合金組成之芯，該銅合金由0.05wt%至3wt%之鈀及/或鉑與作為剩餘物補足100wt%之銅組成。 A ball bonding apparatus comprising an aluminum bonding pad of a semiconductor device and a wire bonded to the aluminum bonding pad, wherein the wire has a diameter of 10 μm to 80 μm and comprises a core composed of a copper alloy, the copper alloy is 0.05 wt From 1 to 3 wt% of palladium and/or platinum is composed of 100 wt% of copper as a residue. 如請求項1之球型接合裝置，其中該芯係由銅合金組成，該銅合金由1wt%至2wt%之鈀及/或鉑與作為剩餘物補足100wt%之銅組成。 The ball joint device of claim 1, wherein the core is composed of a copper alloy composed of 1 wt% to 2 wt% of palladium and/or platinum and 100 wt% of copper as a residue. 如請求項1之球型接合裝置，其中該芯係由銅合金組成，該銅合金由1.2wt%至1.3wt%之鈀及/或鉑與作為剩餘物補足100wt%之銅組成。 A ball bonding apparatus according to claim 1, wherein the core is composed of a copper alloy composed of 1.2 wt% to 1.3 wt% of palladium and/or platinum and 100 wt% of copper as a residue. 如請求項1之球型接合裝置，其中該芯具有一表面，其中將2nm至500nm薄周圍單層金屬塗層或不同金屬毗鄰層之多層塗層疊加於該芯之該表面上，其中該(等)金屬係選自由鈀、鉑、金及銀組成之群，且其中該單或多層金屬塗層之總質量係該芯之總質量之0.09wt%至2.5wt%。 The ball bonding apparatus of claim 1, wherein the core has a surface in which a multilayer coating of a thin single layer metal coating of 2 nm to 500 nm or an adjacent layer of different metals is superposed on the surface of the core, wherein The metal is selected from the group consisting of palladium, platinum, gold, and silver, and wherein the total mass of the single or multiple layer metal coating is from 0.09 wt% to 2.5 wt% of the total mass of the core. 如請求項1之球型接合裝置，在其製造之後將其在125℃至250℃之目標溫度下連續或間斷地熱處理總共500至2000小時。 The ball joint device of claim 1, which is subjected to continuous or intermittent heat treatment at a target temperature of 125 ° C to 250 ° C for a total of 500 to 2000 hours after its manufacture. 如請求項5之球型接合裝置，其中該熱處理在250℃之目標溫度下進行總共2000小時。 The ball joint device of claim 5, wherein the heat treatment is performed at a target temperature of 250 ° C for a total of 2000 hours. 如請求項6之球型接合裝置，其中其展現在該鋁接合墊表面與該經球型接合線之該表面之間之球型接合接觸區域內形成之2.5μm至4μm薄銅鋁化物界面層。 The ball bonding apparatus of claim 6, wherein the 2.5 μm to 4 μm thin copper aluminide interface layer is formed in a spherical bonding contact region between the surface of the aluminum bonding pad and the surface of the ball bonding wire. . 如請求項1之球型接合裝置，其形成電子總成之部分。 A ball joint device as claimed in claim 1, which forms part of an electron assembly. 一種電子總成，其包含一或多個如請求項1至7中任一項之球型 接合裝置。 An electronic assembly comprising one or more ball types as claimed in any one of claims 1 to 7 Engagement device. 一種用於製造球型接合裝置之方法，其包含以下步驟：(1)提供具有鋁接合墊之半導體器件及具有10μm至80μm之直徑並包含由合金組成之芯之線，該合金係0.05wt%至3wt%之鈀與作為剩餘物補足100wt%之銅，及(2)將該線球型接合至該鋁接合墊。 A method for manufacturing a ball type bonding apparatus, comprising the steps of: (1) providing a semiconductor device having an aluminum bonding pad and a wire having a diameter of 10 μm to 80 μm and comprising a core composed of an alloy, the alloy being 0.05 wt% Up to 3 wt% of palladium and 100 wt% of copper as a residue, and (2) bonding the wire to the aluminum bond pad. 如請求項10之方法，其中該芯係由銅合金組成，該銅合金由1wt%至2wt%之鈀及/或鉑與作為剩餘物補足100wt%之銅組成。 The method of claim 10, wherein the core is composed of a copper alloy consisting of 1 wt% to 2 wt% of palladium and/or platinum and 100 wt% of copper as a residue. 如請求項10之方法，其中該芯係由銅合金組成，該銅合金由1.2wt%至1.3wt%之鈀及/或鉑與作為剩餘物補足100wt%之銅組成。 The method of claim 10, wherein the core is composed of a copper alloy consisting of 1.2 wt% to 1.3 wt% of palladium and/or platinum and 100 wt% of copper as a residue. 如請求項10之方法，其中該芯具有一表面，且其中在實施步驟(2)之前，將2nm至500nm薄周圍單層金屬塗層或不同金屬毗鄰層之多層塗層疊加於該芯之該表面上，其中該(等)金屬係選自由鈀、鉑、金及銀組成之群且其中該單或多層金屬塗層之總質量佔該芯之總質量之0.09wt%至2.5wt%。 The method of claim 10, wherein the core has a surface, and wherein a multilayer coating of 2 nm to 500 nm thin surrounding single layer metal coating or a different metal adjacent layer is superposed on the core before performing step (2) In the surface, the metal is selected from the group consisting of palladium, platinum, gold, and silver and wherein the total mass of the single or multiple layer metal coatings is from 0.09 wt% to 2.5 wt% of the total mass of the core. 如請求項10之方法，其中在完成步驟(2)之後，實施使該球型接合裝置在125℃至250℃之目標溫度下經受總共500小時至2000小時之連續或間斷熱處理的另一步驟(3)。 The method of claim 10, wherein after the step (2) is completed, performing another step of subjecting the ball joint apparatus to a continuous or intermittent heat treatment of a total of 500 hours to 2000 hours at a target temperature of 125 ° C to 250 ° C ( 3). 如請求項14之方法，其中該熱處理在250℃之目標溫度下進行總共2000小時。 The method of claim 14, wherein the heat treatment is performed for a total of 2000 hours at a target temperature of 250 °C. 如請求項14之方法，其中該熱處理係作為高溫儲存測試(高溫可靠性測試)實施。 The method of claim 14, wherein the heat treatment is performed as a high temperature storage test (high temperature reliability test).
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