TW201623558A - Chemical mechanical polishing liquid and application thereof - Google Patents
Chemical mechanical polishing liquid and application thereof Download PDFInfo
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本發明是有關於一種化學機械拋光液及其應用，特別係有關於一種用於提高二氧化矽拋光速率的化學機械拋光液及其應用。 The present invention relates to a chemical mechanical polishing liquid and its use, and in particular to a chemical mechanical polishing liquid for improving the polishing rate of cerium oxide and its use.
隨著半導體技術的不斷發展，以及大型積體電路互連層的不斷增加，導電層和絕緣介質層的平坦化技術變得尤為關鍵。二十世紀80年代，由IBM公司首創的化學機械拋光(CMP)技術被認為是目前全域平坦化的最有效的方法。 With the continuous development of semiconductor technology and the increasing number of interconnect layers of large integrated circuits, the planarization technology of conductive layers and dielectric layers has become particularly critical. In the 1980s, the chemical mechanical polishing (CMP) technology pioneered by IBM was considered to be the most effective method for global planarization.
化學機械拋光(CMP)由化學作用、機械作用以及這兩種作用結合而成。它通常由一個帶有拋光墊的研磨台，及一個用於承載晶片的研磨頭組成。其中研磨頭固定住晶片，然後將晶片的正面壓在拋光墊上。當進行化學機械拋光時，研磨頭在拋光墊上線性移動或是沿著與研磨台一樣的運動方向旋轉。與此同時，含有研磨顆粒的漿液被滴到拋光墊上，並因離心作用平鋪在拋光墊上。晶片表面在機械和化學的雙重作用下實現全域平坦化。 Chemical mechanical polishing (CMP) is a combination of chemical action, mechanical action, and both. It usually consists of a polishing table with a polishing pad and a polishing head for carrying the wafer. The polishing head holds the wafer and then presses the front side of the wafer against the polishing pad. When chemical mechanical polishing is performed, the polishing head moves linearly on the polishing pad or in the same direction of motion as the polishing table. At the same time, the slurry containing the abrasive particles is dropped onto the polishing pad and laid flat on the polishing pad by centrifugation. The wafer surface achieves global planarization under both mechanical and chemical effects.
在半導體工業中的化學機械拋光(CMP)領域，使用的化學機械拋光液主要分酸性和鹼性漿料兩種。其中，鹼性漿料的穩定性比較好，但存在沒有合適的氧化劑，以及在拋光過程中易造成表面濁點和輕微劃傷的問題。酸性漿料在這方面表現出了一定的優勢。其可以在研磨顆粒較低的情形下達到較高的拋光速率。但是酸性漿料中 磨料顆粒的尺寸會隨著存儲時間的延長，在漿料中化學組分的作用下逐漸長大。當粒徑大於120奈米以後，會出現沉降分層等現象，嚴重影響拋光品質，造成產品失效。所以控制磨料粒子的長大，延長使用壽命是酸性漿料急於解決的問題。 In the field of chemical mechanical polishing (CMP) in the semiconductor industry, the chemical mechanical polishing liquid used is mainly classified into an acidic and an alkaline slurry. Among them, the stability of the alkaline slurry is relatively good, but there is no suitable oxidizing agent, and the problem of surface cloud point and slight scratching is easily caused during the polishing process. Acidic pastes have shown certain advantages in this regard. It can achieve a higher polishing rate with lower abrasive particles. But in acidic slurry The size of the abrasive particles will gradually grow under the action of the chemical components in the slurry as the storage time is extended. When the particle size is larger than 120 nm, sedimentation stratification and the like may occur, which seriously affects the polishing quality and causes product failure. Therefore, controlling the growth of the abrasive particles and prolonging the service life are problems that the acidic slurry is eager to solve.
目前，化學機械拋光液(CMP)所用的研磨顆粒通常採用二氧化矽，包括矽溶膠(colloidal silica)和氣相二氧化矽(fumed silica)。它們本身是固體，但是在水溶液中可以均勻分散，不沉降，甚至可以保持1至3年的長期穩定性。 Currently, abrasive particles used in chemical mechanical polishing fluids (CMP) typically employ cerium oxide, including colloidal silica and fumed silica. They are solids themselves, but they are uniformly dispersed in aqueous solution, do not settle, and can even maintain long-term stability of 1 to 3 years.
研磨顆粒在水相中的穩定性(不沉降)可以用雙電層理論解釋-由於每一個顆粒表面帶有相同的電荷，它們相互排斥，不會產生凝聚。按照Stern模型，膠體離子在運動時，在切動面上會產生Zeta電位。Zeta電位是膠體穩定性的一個重要指標，因為膠體的穩定是與粒子間的靜電排斥力密切相關的。Zeta電位的降低會使靜電排斥力減小，致使粒子間的van der Waals吸引力占優，因而引起膠體的聚集和沉降。離子強度的高低是影響Zeta電位的重要因素。 The stability of the abrasive particles in the aqueous phase (no sedimentation) can be explained by the electric double layer theory - since each particle surface carries the same charge, they repel each other and do not agglomerate. According to the Stern model, when the colloidal ions move, a zeta potential is generated on the shear plane. The Zeta potential is an important indicator of colloidal stability because the stability of the colloid is closely related to the electrostatic repulsion between the particles. The decrease in Zeta potential reduces the electrostatic repulsion, resulting in an attractive van der Waals attraction between the particles, thus causing colloidal aggregation and settling. The level of ionic strength is an important factor affecting the zeta potential.
膠體的穩定性除了受zeta電位的影響，還受其他許多因素的影響。例如，受溫度的影響，在較高溫度下，顆粒無規則熱運動加劇，相互碰撞的幾率增加，會加速凝聚；例如，受pH值影響，在強鹼性、強酸性條件下比中性穩定，其中鹼性最穩定，pH值4-7區間最不穩定；例如，受表面活性劑種類的影響，有些表面活性可以起到分散劑的作用，提高穩定性，而有些表面活性劑會降低奈米顆粒表面電荷，減小靜電排斥，加速沉降。在表面活性劑中，通常陰離子型表面活性劑有利於奈米顆粒的穩定性，而陽離子型表面活性劑容易降低穩定性；再例如，和添加劑的分子量有關，太長的聚合物長鏈有時會纏繞奈米顆粒，增加分散液的粘度，加速顆粒凝聚。因此，矽溶膠的穩定性受多方面因素的影響。 The stability of the colloid is affected by many other factors besides the zeta potential. For example, due to the influence of temperature, at higher temperatures, the irregular thermal motion of the particles is intensified, and the probability of collision with each other increases, which accelerates aggregation; for example, it is more stable than neutral in strong alkaline and strong acidic conditions due to pH. Among them, the alkaline is the most stable, and the pH range of 4-7 is the most unstable; for example, some surfactants can act as a dispersing agent to improve the stability, and some surfactants can reduce the concentration of surfactants. The surface charge of the rice particles reduces electrostatic repulsion and accelerates sedimentation. In surfactants, usually anionic surfactants favor the stability of nanoparticles, while cationic surfactants tend to reduce stability; for example, depending on the molecular weight of the additive, too long polymer chains are sometimes It will wrap the nanoparticle, increase the viscosity of the dispersion, and accelerate the aggregation of the particles. Therefore, the stability of the cerium sol is affected by many factors.
美國專利60142706和美國專利09609882公開了含有矽烷偶聯劑的拋光液和拋光方法。其中矽烷偶聯劑起到改變多種材料的拋光速度以及改善表面粗糙度的作用。這兩篇專利並沒有發現：在高離子強度(>0.1mol/Kg)時，矽烷偶聯劑可以起到對抗高離子強度的作用、穩定奈米顆粒。因為通常在含有非常高的離子強度時(例如含有大於>0.2mol/Kg鉀離子)，矽溶膠顆粒的雙電層會被大幅壓縮，靜電排斥力減小，迅速形成凝膠、沉澱。並且美國專利60142706和美國專利09609882並沒有發現矽烷偶聯劑可以提高二氧化矽的拋光速度，更沒有發現：矽烷偶聯劑和其他螫合劑之間有顯著的協同作用，對二氧化矽的拋光速度存在1+1>2的效果。 A polishing liquid containing a decane coupling agent and a polishing method are disclosed in U.S. Patent No. 6, 142, 706 and U.S. Patent No. 09,609, 882. Among them, the decane coupling agent serves to change the polishing speed of various materials and to improve the surface roughness. These two patents have not found that at high ionic strength (>0.1 mol/Kg), the decane coupling agent can act against high ionic strength and stabilize the nanoparticle. Since it is usually contained in a very high ionic strength (for example, containing more than >0.2 mol/Kg of potassium ion), the electric double layer of the cerium sol particles is greatly compressed, the electrostatic repulsion force is reduced, and a gel and precipitate are rapidly formed. And U.S. Patent No. 6, s, s, s, and U.S. Patent No. 09,609, 882 have not found that the decane coupling agent can improve the polishing rate of cerium oxide, and it has not been found that there is a significant synergy between the decane coupling agent and other chelating agents, and the polishing of cerium oxide. The speed has an effect of 1+1>2.
本發明所要解決的技術問題是如何提高二氧化矽的研磨速率，並且保持在高離子強度下，化學機械拋光液中研磨顆粒的穩定性和分散度。 The technical problem to be solved by the present invention is how to increase the polishing rate of cerium oxide and maintain the stability and dispersion of the abrasive particles in the chemical mechanical polishing liquid under high ionic strength.
本發明公開一種方法，採用含矽的有機化合物，該含矽化合物和其他螫合劑之間存在顯著的協同作用，大幅提高二氧化矽的拋光速度。同時，在高電解質離子強度時，能夠穩定研磨顆粒，提高拋光液pH的穩定性，即維持研磨顆粒的設定pH不發生變化。 The present invention discloses a method of using a cerium-containing organic compound, and a significant synergistic effect between the cerium-containing compound and other chelating agents greatly increases the polishing rate of cerium oxide. At the same time, at high electrolyte ionic strength, it is possible to stabilize the abrasive particles and improve the pH stability of the polishing liquid, that is, to maintain the set pH of the abrasive particles without changing.
一種化學機械拋光液，其包括含矽化合物、大於或等於0.1mol/Kg的離子強度的電解質離子、螫合劑、二氧化矽研磨顆粒以及水 該含矽的有機化合物可以用下述通式表示： 通式： A chemical mechanical polishing liquid comprising an cerium-containing compound, an electrolyte ion having an ionic strength of greater than or equal to 0.1 mol/Kg, a chelating agent, cerium oxide abrasive particles, and water. The cerium-containing organic compound can be represented by the following formula: general formula:
此處，R為不能水解的取代基，通常為烷基，含有1-50 個碳原子，以1-20個碳原子為佳，其中2-10個碳原子最佳；該長碳鏈上的碳原子還可以繼續被氧、氮、硫、膦、鹵素、矽等其他原子繼續取代。D是連接在R上的有機官能團，可以是氨基、脲基、巰基、環氧基、丙烯酸基等。A,B為相同的或不同的可水解的取代基或羥基；C可以是可水解基團或羥基，也可以是不可水解的烷基取代基；A,B和C通常是氯基、甲氧基、乙氧基、甲氧基乙氧基、乙醯氧基、羥基等，這些基團水解時即生成矽醇(Si(OH)3)，而與無機物質結合，形成矽氧烷。D是乙烯基、氨基、環氧基、丙烯醯氧基、巰基或脲基。這些反應基可與有機物質反應而結合。 Here, R is a substituent which cannot be hydrolyzed, usually an alkyl group, and contains 1-50. One carbon atom, preferably 1-20 carbon atoms, of which 2-10 carbon atoms are the best; the carbon atoms in the long carbon chain can continue to be oxygen, nitrogen, sulfur, phosphine, halogen, hydrazine and other atoms. Continue to replace. D is an organic functional group attached to R, and may be an amino group, a ureido group, a thiol group, an epoxy group, an acryl group or the like. A, B are the same or different hydrolyzable substituents or hydroxyl groups; C may be a hydrolyzable group or a hydroxyl group, or may be a non-hydrolyzable alkyl substituent; A, B and C are usually a chlorine group, a methoxy group The group, ethoxy group, methoxyethoxy group, ethoxy group, hydroxyl group, etc., when these groups are hydrolyzed, form sterol (Si(OH)3), and combine with inorganic substances to form a decane. D is a vinyl group, an amino group, an epoxy group, an acryloxy group, a fluorenyl group or a ureido group. These reactive groups can be combined with an organic substance to react.
代表性的含矽的有機化合物是矽烷偶聯劑，例如以下結構：3-氨基丙基三乙氧基矽烷(商品名KH-550)
γ-(2,3-環氧丙氧基)丙基三甲氧基矽烷(商品名KH-560)
γ-(甲基丙烯醯氧)丙基三甲氧基矽烷(商品名KH-570)
γ-巰丙基三乙氧基矽烷(商品名KH-580)
γ-巰丙基三甲氧基矽烷(商品名KH-590)
N-(β-氨乙基)-γ-氨丙基甲基二甲氧基矽烷(商品名KH-602)
γ-氨乙基氨丙基三甲氧基矽烷(商品名KH-792)
該含矽的有機化合物可以經過多種途徑加到拋光液中，1：研磨顆粒在製備拋光液之前先和含矽化合物鍵合(俗稱的particle表面改性、表面處理)，然後將表面改性後的研磨顆粒加入到拋光液中。2：該含矽的有機化合物在生產拋光液時和研磨顆粒以及其他組分同時混合。3：該含矽的有機化合物可以先完全水解、或部分水解，生成Si-OH基團，然後再加入拋光液中，在拋光液中Si-OH基團和particle表面Si-OH完全鍵合或部分鍵合。因此本發明採用的含矽的有機化合物在拋光時可能存在游離、鍵合、部分水解、完全水解等多種形態。 The cerium-containing organic compound can be added to the polishing liquid through various ways. 1: The abrasive particles are bonded to the cerium-containing compound before the preparation of the polishing liquid (commonly known as particle surface modification, surface treatment), and then the surface is modified. The abrasive particles are added to the polishing liquid. 2: The cerium-containing organic compound is mixed with the abrasive particles and other components at the time of producing the polishing liquid. 3: The cerium-containing organic compound may be completely hydrolyzed or partially hydrolyzed to form a Si-OH group, and then added to the polishing liquid, in which the Si-OH group and the particle surface Si-OH are completely bonded or Partial bonding. Therefore, the ruthenium-containing organic compound used in the present invention may have various forms such as free, bonded, partially hydrolyzed, and completely hydrolyzed during polishing.
本發明所用的螫合劑較佳的為多元羧酸和/或羥基羧酸和/或氨基酸，優選為苯甲酸、乙酸、檸檬酸、馬來酸、乙二酸、丙二酸、丁二酸、己二酸、丙酸、酒石酸、蘋果酸、草酸、水楊酸和甘氨酸、組氨酸、酪氨酸、賴氨酸、精氨酸、谷氨酸、脯氨酸、天冬氨酸中的一種或多種；所述的螫合劑的含量較佳的為重量百分比0.01~ 1.5%，更佳的為0.05~0.5%。 The chelating agent used in the present invention is preferably a polycarboxylic acid and/or a hydroxycarboxylic acid and/or an amino acid, preferably benzoic acid, acetic acid, citric acid, maleic acid, oxalic acid, malonic acid, succinic acid, Adipic acid, propionic acid, tartaric acid, malic acid, oxalic acid, salicylic acid and glycine, histidine, tyrosine, lysine, arginine, glutamic acid, proline, aspartic acid One or more; the content of the chelating agent is preferably 0.01% by weight 1.5%, more preferably 0.05 to 0.5%.
所述拋光組合物能在酸性pH值或鹼性pH值下工作。優選的是，拋光組合物的pH值在1-7。在此範圍內，其pH值宜大於或等於2，且低於或等於6。拋光組合物的最優選pH值為4-6。 The polishing composition is capable of operating at an acidic pH or an alkaline pH. Preferably, the polishing composition has a pH between 1 and 7. Within this range, the pH is preferably greater than or equal to 2 and less than or equal to 6. The most preferred pH for the polishing composition is 4-6.
所屬拋光組合物還可包含無機或有機的pH值調節劑，以將拋光組合物的pH值降至酸性pH值，或者將pH值增至鹼性pH值。合適的無機pH值減小劑包括例如硝酸、硫酸、鹽酸、磷酸、或包含至少一種上述無機pH值減小劑的組合。合適的pH值增高劑包括以下的一種：金屬氫氧化物、氫氧化銨或含氮有機堿、或上述pH值增大劑的組合。 The polishing composition may also comprise an inorganic or organic pH adjusting agent to reduce the pH of the polishing composition to an acidic pH or to increase the pH to an alkaline pH. Suitable inorganic pH reducing agents include, for example, nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, or a combination comprising at least one of the foregoing inorganic pH reducing agents. Suitable pH enhancers include one of the following: a metal hydroxide, ammonium hydroxide or a nitrogen-containing organic hydrazine, or a combination of the above-described pH increasing agents.
該拋光液中，含矽的有機化合物的濃度為重量百分比0.001%~1%，優選為0.01%~0.5%。 The concentration of the cerium-containing organic compound in the polishing liquid is 0.001% to 1% by weight, preferably 0.01% to 0.5% by weight.
該拋光液中，二氧化矽研磨顆粒的濃度為重量百分比2%~10%。粒徑為20~200nm，優選為20~120nm。 In the polishing liquid, the concentration of the cerium oxide abrasive particles is 2% to 10% by weight. The particle diameter is 20 to 200 nm, preferably 20 to 120 nm.
該拋光液中，大於或等於0.1mol/Kg的離子強度的電解質離子是金屬離子和非金屬離子。優選地，電解質離子是鉀離子。 In the polishing liquid, electrolyte ions having an ionic strength of 0.1 mol/Kg or more are metal ions and non-metal ions. Preferably, the electrolyte ions are potassium ions.
該拋光液中，水為餘量。 In the polishing liquid, water is the balance.
本發明的積極進步效果在於： The positive effects of the present invention are:
1：本發明通過在矽烷偶聯劑實現了在高離子強度下的化學機械拋光液的分散穩定性及pH穩定性問題。 1: The present invention achieves the problem of dispersion stability and pH stability of a chemical mechanical polishing liquid at a high ionic strength by a decane coupling agent.
2：通過矽烷偶聯劑和螫合劑的協同作用，進一步大幅提高了二氧化矽的拋光速度； 2: further improving the polishing rate of cerium oxide by the synergistic action of the decane coupling agent and the chelating agent;
3：通過這種方法可以製備高度濃縮的化學機械拋光液。 3: A highly concentrated chemical mechanical polishing liquid can be prepared by this method.
4：通過高度濃縮可以大幅降低產品原材料、包裝、運輸、倉儲、管理、人力等成本； 4: Through high concentration, the cost of raw materials, packaging, transportation, warehousing, management, manpower, etc. can be greatly reduced;
5：提供了一種酸性條件下穩定的拋光液配方，其可以 在研磨顆粒固含量較低的情形下(2%~10%)，達到鹼性拋光液研磨顆粒含量30%-50%間才能達到的研磨速率。 5: provides a stable polishing solution formulation under acidic conditions, which can In the case of low solid content of the abrasive particles (2% to 10%), the grinding rate can be achieved between 30% and 50% of the abrasive content of the alkaline polishing liquid.
下面通過具體實施例進一步闡述本發明的優點，但本發明的保護範圍不僅僅局限於下述實施例。 The advantages of the present invention are further illustrated by the following specific examples, but the scope of the present invention is not limited only to the following examples.
按照表1中各實施例以及對比實施例的成分及其比例配製拋光液，混合均勻，用水補足重量百分比至100%。用KOH、HNO3或pH調節劑調節到所需要的pH值。其中拋光條件為：拋光機台為Mirra機台，Fujibo拋光墊，200mm Wafer，下壓力1.5psi，拋光液滴加速度150ml/分鐘。 The polishing liquid was prepared according to the ingredients of the respective examples in Table 1 and the comparative examples, and the ratio thereof, and the mixture was uniformly mixed, and the weight percentage was made up to 100% with water. Adjust to the desired pH with KOH, HNO 3 or a pH adjuster. The polishing conditions were as follows: the polishing machine was a Mirra machine, a Fujibo polishing pad, a 200 mm Wafer, a down pressure of 1.5 psi, and a polishing droplet acceleration of 150 ml/min.
對比例1表明：在很高的離子強度下，二氧化矽的去除速率只有250A/min，並且拋光液不穩定，pH值在30天內從4.0升高到6.6，迅速分層沉降。對比例3和對比例1相對照表明：在很高的離子強度下，加入矽烷偶聯劑，二氧化矽的去除速率增加了420A/min，並且，拋光液很穩定，研磨顆粒平均粒徑(particle mean size)不增加，但拋光液的pH值從4.0升高到6.8。對比例2表明：加入組氨酸，雖然不能使二氧化矽的拋光速度增加，而且同時拋光液不穩定，迅速分層沉降，但拋光液的pH值很穩定，30天只增長了0.1。實施例1和對比例2相對照 表明：在組氨酸存在下，加入矽烷偶聯劑，二氧化矽的去除速率比不加組氨酸以及不加矽烷偶聯劑，增加了642A/min，這個增加量大於矽烷偶聯劑(420A/min)和組氨酸(17A/min)兩者貢獻之和，表明：矽烷偶聯劑和組氨酸以及其他螫合劑之間存在協同作用，可以大幅提高二氧化矽的拋光速度。對比例1~2都沒加矽烷偶聯劑，拋光液不穩定。對比例4表明，在鹼性環境中，儘管在很高的離子強度下，在含矽有機物的作用下，低濃度研磨顆粒的拋光液的二氧化矽的去除速率(283A/min)也遠遠低於酸性環境中低濃度研磨顆粒的拋光液的二氧化矽的去除速率(670A/min)。同時，該二氧化矽去除速率(670A/min)也高於對比例5中高濃度研磨顆粒濃度的二氧化矽去除速率(550A/min)。實施例1~14，有矽烷偶聯劑和螫合劑，拋光液比較穩定，pH值也比較穩定，並且二氧化矽的去除速度顯著提升。實施例1~14，都表明，矽烷偶聯劑具有“抗高離子強度的作用”，拋光液非常穩定，同時，螫合劑具有穩定拋光液pH值的作用。 Comparative Example 1 showed that at a very high ionic strength, the removal rate of cerium oxide was only 250 A/min, and the polishing liquid was unstable, and the pH was raised from 4.0 to 6.6 in 30 days, and the layer was quickly settled. Comparison of Comparative Example 3 and Comparative Example 1 showed that at a very high ionic strength, the addition of a decane coupling agent increased the removal rate of cerium oxide by 420 A/min, and the polishing liquid was stable and the average particle size of the abrasive particles ( The particle mean size) did not increase, but the pH of the polishing solution increased from 4.0 to 6.8. Comparative Example 2 showed that the addition of histidine did not increase the polishing rate of cerium oxide, and at the same time the polishing liquid was unstable and rapidly separated and settled. However, the pH of the polishing liquid was stable, and only increased by 0.1 in 30 days. Comparison between Example 1 and Comparative Example 2 It shows that in the presence of histidine, the addition of decane coupling agent, the removal rate of cerium oxide is increased by 642A/min compared with no histidine and no decane coupling agent, which is greater than the decane coupling agent. The sum of the contributions of both 420A/min and histidine (17A/min) indicates that there is a synergistic effect between the decane coupling agent and histidine and other chelating agents, which can greatly improve the polishing rate of cerium oxide. In Comparative Examples 1 and 2, no decane coupling agent was added, and the polishing liquid was unstable. Comparative Example 4 shows that in an alkaline environment, the removal rate of cerium oxide (283 A/min) of the polishing solution of the low-concentration abrasive particles is far away under the action of the cerium-containing organic matter under the high ionic strength. The removal rate of cerium oxide (670 A/min) of the polishing liquid below the low concentration abrasive particles in an acidic environment. At the same time, the cerium oxide removal rate (670 A/min) was also higher than the cerium oxide removal rate (550 A/min) of the high concentration abrasive particle concentration in Comparative Example 5. Examples 1 to 14 have a decane coupling agent and a chelating agent, the polishing liquid is relatively stable, the pH value is relatively stable, and the removal rate of cerium oxide is remarkably improved. In Examples 1 to 14, it has been shown that the decane coupling agent has "anti-high ionic strength effect", the polishing liquid is very stable, and at the same time, the chelating agent has a function of stabilizing the pH of the polishing liquid.
應當理解的是，本發明所述%均指的是品質百分含量。 It should be understood that the % stated in the present invention refers to the percentage by mass.
以上對本發明的具體實施例進行了詳細描述，但其只是作為範例，本發明並不限制於以上描述的具體實施例。對於本領域技術人員而言，任何對本發明進行的等同修改和替代也都在本發明的範疇之中。因此，在不脫離本發明的精神和範圍下所作的均等變換和修改，都應涵蓋在本發明的範圍內。 The specific embodiments of the present invention have been described in detail above, but are merely exemplary, and the invention is not limited to the specific embodiments described above. Any equivalent modifications and substitutions to the invention are also within the scope of the invention. Accordingly, equivalents and modifications may be made without departing from the spirit and scope of the invention.
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