TW201614083A - Method for forming nitride semiconductor layer and method for manufacturing semiconductor device - Google Patents
Method for forming nitride semiconductor layer and method for manufacturing semiconductor deviceInfo
- Publication number
- TW201614083A TW201614083A TW104122947A TW104122947A TW201614083A TW 201614083 A TW201614083 A TW 201614083A TW 104122947 A TW104122947 A TW 104122947A TW 104122947 A TW104122947 A TW 104122947A TW 201614083 A TW201614083 A TW 201614083A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor layer
- nitride semiconductor
- semiconductor device
- forming nitride
- buffer layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 150000004767 nitrides Chemical class 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 2
- 229910002704 AlGaN Inorganic materials 0.000 abstract 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/08—Epitaxial-layer growth by condensing ionised vapours
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention has: a step for epitaxially growing a buffer layer on a substrate, said buffer layer being formed of AlN or AlGaN; and a step for epitaxially growing, on the buffer layer, a nitride semiconductor layer containing at least GaN by means of a sputtering method wherein a nitride target containing Ga and GaN is used, and the flow rate of a nitrogen-containing reactive gas is set less than 20 % of the flow rate of the whole process gas.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014147964 | 2014-07-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201614083A true TW201614083A (en) | 2016-04-16 |
TWI567214B TWI567214B (en) | 2017-01-21 |
Family
ID=55078092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104122947A TWI567214B (en) | 2014-07-18 | 2015-07-15 | A method for forming a nitride semiconductor layer, and a method of manufacturing the semiconductor device |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6001194B2 (en) |
KR (1) | KR101687595B1 (en) |
TW (1) | TWI567214B (en) |
WO (1) | WO2016009577A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI824304B (en) * | 2020-09-29 | 2023-12-01 | 日商芝浦機械電子裝置股份有限公司 | Film forming device and film forming method |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180072570A1 (en) | 2015-03-30 | 2018-03-15 | Tosoh Corporation | Gallium nitride-based sintered compact and method for manufacturing same |
JP6588349B2 (en) * | 2016-01-26 | 2019-10-09 | ヤマト科学株式会社 | Containment system |
CA3132525A1 (en) | 2016-05-26 | 2017-11-30 | Robbie Jorgenson | Group iiia nitride growth method and system |
TWI825187B (en) * | 2018-10-09 | 2023-12-11 | 日商東京威力科創股份有限公司 | Method for forming nitride semiconductor film |
CN115335548A (en) * | 2020-03-30 | 2022-11-11 | 东曹株式会社 | Laminated film, structure comprising laminated film, semiconductor element, electronic device, and method for producing laminated film |
WO2022176422A1 (en) * | 2021-02-19 | 2022-08-25 | 株式会社ジャパンディスプレイ | Method for producing gallium nitride film |
WO2023218840A1 (en) * | 2022-05-10 | 2023-11-16 | 株式会社ジャパンディスプレイ | Film formation device and film formation method for gallium nitride film |
WO2024084664A1 (en) * | 2022-10-20 | 2024-04-25 | 京セラ株式会社 | Semiconductor substrate, template substrate, and method and device for producing template substrate |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4613373B2 (en) * | 1999-07-19 | 2011-01-19 | ソニー株式会社 | Method for forming group III nitride compound semiconductor thin film and method for manufacturing semiconductor element |
JP4131618B2 (en) * | 2000-05-22 | 2008-08-13 | 日本碍子株式会社 | Manufacturing method of substrate for photonic device |
US6495894B2 (en) * | 2000-05-22 | 2002-12-17 | Ngk Insulators, Ltd. | Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate |
JP4974635B2 (en) | 2006-10-06 | 2012-07-11 | 昭和電工株式会社 | Film forming method of group III nitride compound semiconductor multilayer structure |
JP2008153603A (en) | 2006-12-20 | 2008-07-03 | Showa Denko Kk | Method of manufacturing group iii nitride compound semiconductor light-emitting element, group iii nitride compound semiconductor light-emitting element, and lamp |
JP5444460B2 (en) * | 2010-04-30 | 2014-03-19 | キヤノンアネルバ株式会社 | Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illumination device |
EP3088374B1 (en) | 2010-12-20 | 2018-09-05 | Tosoh Corporation | Gallium nitride molded article and method for producing same |
JP2012144805A (en) * | 2010-12-21 | 2012-08-02 | Tosoh Corp | Gallium nitride molded article and method for producing the same |
JP5576507B2 (en) * | 2010-12-27 | 2014-08-20 | キヤノンアネルバ株式会社 | Epitaxial film forming method, sputtering apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illumination apparatus |
JP5718709B2 (en) | 2011-04-12 | 2015-05-13 | 株式会社アルバック | Semiconductor layer forming apparatus and semiconductor layer manufacturing method |
JP2013125851A (en) | 2011-12-14 | 2013-06-24 | Ulvac Japan Ltd | Film forming apparatus and film formation method |
JP5974831B2 (en) * | 2012-11-02 | 2016-08-23 | 東ソー株式会社 | Gallium nitride target |
-
2015
- 2015-03-17 WO PCT/JP2015/001479 patent/WO2016009577A1/en active Application Filing
- 2015-03-17 KR KR1020157024926A patent/KR101687595B1/en active IP Right Grant
- 2015-03-17 JP JP2015548510A patent/JP6001194B2/en active Active
- 2015-07-15 TW TW104122947A patent/TWI567214B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI824304B (en) * | 2020-09-29 | 2023-12-01 | 日商芝浦機械電子裝置股份有限公司 | Film forming device and film forming method |
Also Published As
Publication number | Publication date |
---|---|
JP6001194B2 (en) | 2016-10-05 |
JPWO2016009577A1 (en) | 2017-04-27 |
KR101687595B1 (en) | 2016-12-19 |
KR20160020401A (en) | 2016-02-23 |
TWI567214B (en) | 2017-01-21 |
WO2016009577A1 (en) | 2016-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201614083A (en) | Method for forming nitride semiconductor layer and method for manufacturing semiconductor device | |
EA201890238A1 (en) | METHOD OF CULTIVATION OF NANOPROXES OR NANOPYRAMIDES ON GRAPHITE SUBSTRATES | |
TW201614860A (en) | Systems and methods for preparing GaN and related materials for micro assembly | |
WO2011123291A3 (en) | Forming a compound-nitride structure that includes a nucleation layer | |
EP3314657A4 (en) | GALLIUM NITRIDE (GaN) TRANSISTOR STRUCTURES ON A SUBSTRATE | |
MY191396A (en) | Method of reducing residual contamination in singulated semiconductor die | |
WO2010129292A3 (en) | Cluster tool for leds | |
WO2008060349A3 (en) | Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition | |
TW201614832A (en) | High electron mobility transistor with periodically carbon doped gallium nitride | |
TW200802958A (en) | Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device | |
GR1008013B (en) | Method for heteroepitaxial growth of iii metal-face polarity iii-nitrides on diamond substrates | |
GB201210134D0 (en) | Selective sidewall growth of semiconductor material | |
IN2015DN02030A (en) | ||
EP3103899A4 (en) | Method for producing group-iii nitride crystal, group-iii nitride crystal, semiconductor device, and device for producing group-iii nitride crystal | |
MX2017005642A (en) | Anti-ang2 antibodies and methods of use. | |
GB2574879B (en) | Substrates for III-nitride epitaxy | |
EP3396030A4 (en) | Semiconductor substrate, and epitaxial wafer and method for producing same | |
EP3879010A4 (en) | Sic semiconductor substrate, and, production method therefor and production device therefor | |
WO2016072850A3 (en) | Atomic layer deposition apparatus and method for processing substrates using an apparatus | |
EP4012079A4 (en) | Sic substrate, sic epitaxial substrate, sic ingot and production methods thereof | |
EP3459118A4 (en) | DAMEGE-FREE PLASMA-ENHANCED CVD PASSIVATION OF AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS | |
EP3960913A4 (en) | Method of manufacturing semiconductor substrate, manufacturing apparatus therefor, and epitaxial growth method | |
EP3862134A4 (en) | Indium phosphide substrate, semiconductor epitaxial wafer, and method for producing indium phosphide substrate | |
TW201612353A (en) | Method of manufacturing nitride semiconductor template | |
TW201612948A (en) | Bonded wafer production method |