TW201613133A - Manufacturing method of light-emitting diode and its manufactured product - Google Patents

Manufacturing method of light-emitting diode and its manufactured product

Info

Publication number
TW201613133A
TW201613133A TW103131940A TW103131940A TW201613133A TW 201613133 A TW201613133 A TW 201613133A TW 103131940 A TW103131940 A TW 103131940A TW 103131940 A TW103131940 A TW 103131940A TW 201613133 A TW201613133 A TW 201613133A
Authority
TW
Taiwan
Prior art keywords
light
type semiconductor
semiconductor layer
emitting diode
manufacturing
Prior art date
Application number
TW103131940A
Other languages
Chinese (zh)
Other versions
TWI563683B (en
Inventor
mei-fang Zhan
wen-xin Zhang
Original Assignee
Turnray Energy Tech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Turnray Energy Tech Ltd filed Critical Turnray Energy Tech Ltd
Priority to TW103131940A priority Critical patent/TW201613133A/en
Publication of TW201613133A publication Critical patent/TW201613133A/en
Application granted granted Critical
Publication of TWI563683B publication Critical patent/TWI563683B/zh

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Abstract

The present invention provides a light-emitting diode which comprises an epitaxial substrate, a light-emitting die disposed on the epitaxial substrate, and two metal conductive layers. The light-emitting die includes a first type semiconductor layer epitaxially formed on the epitaxial substrate and including a platform and a protruded post adjacent to the platform, an active layer epitaxially formed on the platform, and a second type semiconductor layer epitaxially formed on the active layer without contacting the protruded post of the first type semiconductor layer. A top surface of the second type semiconductor layer is substantially equal in height to a top surface of the protruded post of the first type semiconductor layer. The metal conductive layers are respectively disposed on the second type semiconductor layer and the protruded post of the light-emitting diode. The present invention also provides a manufacturing method of the aforementioned light-emitting diode.
TW103131940A 2014-09-16 2014-09-16 Manufacturing method of light-emitting diode and its manufactured product TW201613133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103131940A TW201613133A (en) 2014-09-16 2014-09-16 Manufacturing method of light-emitting diode and its manufactured product

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103131940A TW201613133A (en) 2014-09-16 2014-09-16 Manufacturing method of light-emitting diode and its manufactured product

Publications (2)

Publication Number Publication Date
TW201613133A true TW201613133A (en) 2016-04-01
TWI563683B TWI563683B (en) 2016-12-21

Family

ID=56360956

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103131940A TW201613133A (en) 2014-09-16 2014-09-16 Manufacturing method of light-emitting diode and its manufactured product

Country Status (1)

Country Link
TW (1) TW201613133A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107808890A (en) * 2017-11-10 2018-03-16 华引芯（武汉）科技有限公司 A kind of LED chip and preparation method thereof
CN112259573A (en) * 2020-10-26 2021-01-22 錼创显示科技股份有限公司 Miniature LED display
US11616168B2 (en) 2020-10-26 2023-03-28 PlayNitride Display Co., Ltd. Micro light-emitting diode display

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101730152B1 (en) * 2010-10-06 2017-04-25 엘지이노텍 주식회사 Light emitting device
TWI449214B (en) * 2011-10-27 2014-08-11 Huga Optotech Inc Semiconductor light emitting device
TWI581466B (en) * 2013-01-16 2017-05-01 隆達電子股份有限公司 Light emitting diode chip structure and light emitting diode element
TWM499651U (en) * 2014-09-16 2015-04-21 Turnray Energy Tech Ltd Light emitting diode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107808890A (en) * 2017-11-10 2018-03-16 华引芯（武汉）科技有限公司 A kind of LED chip and preparation method thereof
CN107808890B (en) * 2017-11-10 2024-01-02 华引芯（武汉）科技有限公司 LED chip and preparation method thereof
CN112259573A (en) * 2020-10-26 2021-01-22 錼创显示科技股份有限公司 Miniature LED display
US11616168B2 (en) 2020-10-26 2023-03-28 PlayNitride Display Co., Ltd. Micro light-emitting diode display

Also Published As

Publication number Publication date
TWI563683B (en) 2016-12-21

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MM4A Annulment or lapse of patent due to non-payment of fees