TW201545623A - 呈護漆或鑄料形式在陶瓷及／或阻銲漆上的牢附著層 - Google Patents
呈護漆或鑄料形式在陶瓷及／或阻銲漆上的牢附著層 Download PDFInfo
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- TW201545623A TW201545623A TW104109951A TW104109951A TW201545623A TW 201545623 A TW201545623 A TW 201545623A TW 104109951 A TW104109951 A TW 104109951A TW 104109951 A TW104109951 A TW 104109951A TW 201545623 A TW201545623 A TW 201545623A
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- ceramic
- adhesion
- lacquer
- carrier
- layer
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- 239000000919 ceramic Substances 0.000 title claims abstract description 47
- 239000004922 lacquer Substances 0.000 title claims abstract description 13
- 238000005266 casting Methods 0.000 title claims description 24
- 229910000679 solder Inorganic materials 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000004033 plastic Substances 0.000 claims abstract description 11
- 229920003023 plastic Polymers 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 239000003795 chemical substances by application Substances 0.000 claims description 14
- 239000003973 paint Substances 0.000 claims description 10
- 239000002966 varnish Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine group Chemical group NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 2
- 239000012790 adhesive layer Substances 0.000 claims 1
- 238000007788 roughening Methods 0.000 claims 1
- 238000005476 soldering Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 5
- 238000004382 potting Methods 0.000 abstract 3
- 230000001681 protective effect Effects 0.000 abstract 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000002519 antifouling agent Substances 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- -1 moisture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/285—Permanent coating compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0162—Silicon containing polymer, e.g. silicone
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0756—Uses of liquids, e.g. rinsing, coating, dissolving
- H05K2203/0759—Forming a polymer layer by liquid coating, e.g. a non-metallic protective coating or an organic bonding layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
一種在陶瓷上及/或銲料表漆上的牢附著層，其中，該牢附著層包含一種鑄料或一種落漆，且該鑄料或該漆係一種以塑膠為基礎的物料。此外關於一種用於製造該種牢附著層的方法，包含以下步驟：i)將一陶瓷基材在一蝕刻槽液中將表面弄成粗糙；ii)將如此弄粗糙的陶瓷基材利用一種金屬銲膏鍍一金屬層；iii)將如此所鍍上金屬的陶瓷載體加工成一小型之具有封在殼體內之LED的陶瓷晶片或一開放的LED晶片；iv)將該封在殼體內的LED或開放的LED晶片與其他電子構件在該鍍金屬的載體上連接，以及v)將一種鑄料或一護漆層施到如此所裝設的載體陶瓷上，該鑄料或護漆層係一種以塑膠為基礎的物料。此外還關於一種具有這種牢附著層的構件。
Description
本發明關於一種在陶瓷基材及/或一阻銲料漆(Lötsopplack,英：solder stopping lacquer)上當作保護漆或鑄料的牢附著層，以及其製造方法及用此層施覆的構件(特別是由電路板)，一較佳之應用範圍在高電壓電路板領域。
高電壓電路板鑄造以確保防接觸或環境影響，特別是可作DIN EN 60529的保護方式IPC8，這種保護方式，習知者係完全的防塵保護或時間性的或長期性的浸入(Untertauch)。
為此目的使用鑄料及護漆。
「鑄料」係一種用於將構件或構造組覆蓋，作機械性補強及作保護的物料，俾使該構件或構造組受保護以防化學品、水氣、灰塵、機械應力或類似物的影響。
反之，「護漆」係一種漆，它沿著構件或構造的輪廓形成，且保護構件或構造組免受水氣或灰塵影響，這種漆施加厚度從只有微米到
好幾微米。
「阻銲料漆」大多為少許染色之有機聚合物，它不可溶在(清
澈的)鑄料中，但須一如陶瓷和鑄料密密地粘合成密封，但先前技術習知且市場上有售的鑄料和護漆有一缺點，即它們不能長期附著在陶瓷上或阻銲料漆上及/或在一段時間後染黃，因此該鑄料及護漆在時間過程至少部分地不必用大力氣就可剝離，這點會使水氣能浸入，因此保護類型IP68不再能達成，此外，在施用的LED上會造成環境腐蝕。
因此本發明的目的在將先前技術的缺點克服。
此目的係利用申請專利範圍第1項的一種牢附著層以及申請專利範圍第4項之製造這種牢附著層的製造方法以及申請專利範圍第11項之用這種牢附著層施覆的蓋件達成。
較佳之實施例見於各申請專利範圍附屬項。
藉著使用適當的附著性賦與劑(助粘劑)及/或適當地選擇，鑄料及/或將要處理的陶瓷及/或要處理的銲料阻漆的表面改質，可造成一種耐久的密封接合，它耐老化且不會黃化或變脆。
舉例而言，適合的陶瓷基材係為以氮化鋁或Al2O3為基礎的基材，它們可含添加物如Y2O3。
在此陶瓷基材宜呈冷却體或扁平體的形式。
最好陶瓷基材先在一鹼性蝕刻槽液或酸性蝕刻槽液中弄粗糙。
在此，在鹼槽液中，pH值宜選設為10~14，且尤宜為11
~13。
蝕刻槽液的溫度宜為20~200℃，尤宜40~160℃，特宜60~120℃。該陶瓷基材宜在蝕刻槽中放10~75分，尤宜15~25分。
Ra值，亦即陶瓷表面平均粗糙度在弄粗糙物宜上升至少0.1微米，尤宜升高至少0.2微米，特宜升高至少0.3微米。
然後將此可能弄粗糙的陶瓷基材利用一般之金屬銲膏鍍上金屬層，所用鍍金屬層舉例而言可為銀銅及金屬-鎳-金，在此較佳為銀或銅，銀尤佳，在鍍覆後，將相關的金屬銲膏在一溫度〔宜為450~1300℃，尤宜650~1100℃，特宜850~900℃〕燒入，在此，該金膏銲膏宜氧化，燒入作業宜作1~25分，尤宜5~15分。
然後將相關鍍金屬的陶瓷載體用行家習知的方式加工，宜加工成具一封殼體之LED的小陶瓷晶片，亦即一種鑄成之呈罐形施加的透鏡(它且清澈的矽力康塑膠構成)或加工成開放的LED晶片。
接著將該封殼體的LED或開放的LED晶片和其他電子構件(例如電阻)在上述(較大的)鍍金屬的陶瓷載體上連接，且宜利用燒結、軟銲、結合及/或粘合。
依一實施例，在構件安裝後，將一適合的鑄料或一適合的護漆施到該對應地設了構件的載體陶瓷上，這點宜藉著將鑄料或護漆噴灑或灌鑄而達成，但也可用不同的定量供應或鍍覆技術，如浸鍍、離心加速、刷覆、定量供應或滴覆。
在此適合的鑄料及護漆為以塑膠為基礎的物料，最好用矽膠及/或聚胺基甲酸乙酯當鑄料或護漆。
依一較佳實施例，在構件安裝後，先將一適當的附著性賦與劑(即粘劑)施到該相當地裝以構件的載體陶瓷，這點係藉將附著性賦與劑噴灑達成，但也可用不同之定量任意或施覆技術如浸鍍、離心、刷覆、定量供應或滴覆，在此適合的附著性賦與劑為以塑膠為基礎的物料，接著將一適合的鑄料或一適合的護漆如前所述施覆。
如此所產生之陶瓷或銲料阻漆的牢附著層除了鑄料或護漆外在該陶瓷或銲粗阻漆那一側另外包含一種附著性賦與劑。
依另一較佳實施例，該設以構件的載體陶瓷先用物理化學方式清洗，因此能使適合的鑄料或適合的護漆牢牢附著，然後將鑄料施到如此所產生之該對應地設以構件的具有附著性賦與劑的表面。
本發明茲利用以下實施例說明，但它們不限制本發明的範圍。
〔實例1〕
一種由氮化鋁構成的陶瓷基材含3重量%的Y2O3，呈一冷却體或扁平體形式，將它在一鹼性蝕刻槽液中在60℃溫度及pH值12作粗糙化為時20分，在此Ra值從最大0.6微米增加到0.9微米。
〔實例2〕
一種由96重量%Al2O3構成的陶瓷呈冷却體或扁平體形式，將它在一硫酸槽液中在120℃溫度弄粗糙，為時20分，其中Ra值從最大0.6
微米增加到0.9微米。
〔實例3〕
依實例1或實例2處理過的陶瓷基材用一銀銲膏鍍以金屬層，且在870℃的溫度燒入10分鐘而氧化，如此得到對應之鍍金屬的陶瓷載體。
然後將它用行家習知的方式加工成一個具有一裝以殼體的LED的小陶瓷晶片，亦即一個淺鑄呈滴狀施覆之透鏡，由清澈的矽力康塑膠構成，或加工成一開放的LED晶片。
此裝以殼體的LED或開放的LED晶片隨後與該(較大的)鍍金屬之陶瓷載體上與其他電子構件如電阻連接，例如利用燒結、軟銲、接合及/或粘合。
〔實例4〕
依實例3將構件安裝後，利用噴灑將一適合的附著性賦與劑施到該對應地裝以構件的載體陶瓷上。在此，該附著性賦與劑係以塑膠為基礎者。
〔實例5〕
依實例3將構件安裝後或依實例4施覆附著性賦與劑後，利用灌鑄將一適合的鑄料施到該對應地設以構件的載體陶瓷上，在此，該鑄料為一在有機聚合物，特別是聚胺基甲酸或矽力康。
〔實例6〕
依實例3將構件安裝後，將對應地設以構件的載體陶瓷用物理化學方式清洗且可使適合的鑄料牢牢附著，然後將鑄料依實例5施到該
如此所產生之具附著性賦與劑的表面上。
Claims (12)
- 一種在陶瓷上及/或銲料表漆上的牢附著層，其特徵在：該牢附著層包含一種鑄料或一種落漆，且該鑄料或該漆係一種以塑膠為基礎的物料。
- 如申請專利範圍第1項之牢附著層，其中：該鑄料或護漆為一種矽力康及/或聚胺基甲酸乙酯。
- 如申請專利範圍第1或第2項之牢附著層，其中：該牢附著層在該陶瓷或銲料表漆的那一側另外還包含一種附著性賦與劑，且該附著性賦與劑係一種以塑膠為基礎的物料。
- 一種用於製造如申請專利範圍第1~3項的任一項的一種牢附著層的方法，包含以下步驟：i)將一陶瓷基材在一蝕刻槽液中將表面弄成粗糙；ii)將如此弄粗糙的陶瓷基材利用一種金屬銲膏鍍一金屬層；iii)將如此所鍍上金屬的陶瓷載體加工成一小型之具有封在殼體內之LED的陶瓷晶片或一開放的LED晶片；iv)將該封在殼體內的LED或開放的LED晶片與其他電子構件在該鍍金屬的載體上連接，以及v)將一種鑄料或一護漆層施到如此所裝設的載體陶瓷上，該鑄料或護漆層係一種以塑膠為基礎的物料。
- 如申請專利範圍第4項之方法，其中：在該步驟(iv)和(v)之間將一種附著性賦與劑施到該裝設的載體陶瓷上，且該附著性賦與劑係一種以塑膠為基礎的物料。
- 如申請專利範圍第4項之方法，其中：在步驟(iv)和(v)之間將該裝設之載體陶瓷用物理化學方式洗淨。
- 如申請專利範圍第4~6項之任一項之方法，其中：該陶瓷表面的Ra值在步驟(i)弄粗糙時上升至少0.1微米。
- 如申請專利範圍第4~7項之任一項之方法，其中：該金屬銲膏係一種銀銲膏或銅銲膏且該銲膏在施加後在450°~130℃的溫度燒入到該陶瓷基材上並氧化。
- 如申請專利範圍第4~8項之任一項之方法，其中：將該附著性賦與劑噴灑到該裝設的載體陶瓷上。
- 如申請專利範圍第4~9項之任一項之方法，其中：將該鑄料或護漆噴灑到該裝設的載體陶瓷上。
- 一種構件，其特徵在於，該構件利用如申請專利範圍第1~第3項任一項的一種牢附著層塗覆。
- 如申請專利範圍第11項之構件，其中：該構件係一種高電壓電路板。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014205832 | 2014-03-28 |
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| Publication Number | Publication Date |
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| TW201545623A true TW201545623A (zh) | 2015-12-01 |
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| TW104109951A TW201545623A (zh) | 2014-03-28 | 2015-03-27 | 呈護漆或鑄料形式在陶瓷及／或阻銲漆上的牢附著層 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP3123842A1 (zh) |
| DE (1) | DE102015205486A1 (zh) |
| TW (1) | TW201545623A (zh) |
| WO (1) | WO2015144810A1 (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016005291B4 (de) * | 2016-04-29 | 2024-01-11 | Ksg Austria Gmbh | Verfahren zur Herstellung eines elektronischen Gerätes in der Form eines Spritzgußteils mit eingelegter Leiterplatte |
| DE102017217815A1 (de) * | 2017-10-06 | 2019-04-11 | Conti Temic Microelectronic Gmbh | Verfahren zum Herstellen einer elektronischen Komponente, elektronische Komponente und Lötstopplack |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100712715B1 (ko) * | 2001-01-31 | 2007-05-04 | 도시바세라믹스가부시키가이샤 | 표면에 미세한 돌기를 형성시킨 세라믹스부재 및 그제조방법 |
| JP2002308683A (ja) * | 2001-01-31 | 2002-10-23 | Toshiba Ceramics Co Ltd | 表面凹凸化したセラミックス部材及びその製造方法 |
| WO2009075530A2 (en) * | 2007-12-13 | 2009-06-18 | Amoleds Co., Ltd. | Semiconductor and manufacturing method thereof |
| DE102009037249A1 (de) * | 2009-03-18 | 2010-11-11 | Kay Schumann | Stablampe |
| CN103547850A (zh) * | 2011-03-29 | 2014-01-29 | 陶瓷技术有限责任公司 | 具有陶瓷冷却器和led的浇注灯体 |
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2015
- 2015-03-26 DE DE102015205486.1A patent/DE102015205486A1/de not_active Withdrawn
- 2015-03-26 EP EP15712613.7A patent/EP3123842A1/de not_active Withdrawn
- 2015-03-26 WO PCT/EP2015/056522 patent/WO2015144810A1/de active Application Filing
- 2015-03-27 TW TW104109951A patent/TW201545623A/zh unknown
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| Publication number | Publication date |
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| EP3123842A1 (de) | 2017-02-01 |
| DE102015205486A1 (de) | 2015-10-01 |
| WO2015144810A1 (de) | 2015-10-01 |
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