TW201539566A - 基板處理方法 - Google Patents
基板處理方法 Download PDFInfo
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- TW201539566A TW201539566A TW104105712A TW104105712A TW201539566A TW 201539566 A TW201539566 A TW 201539566A TW 104105712 A TW104105712 A TW 104105712A TW 104105712 A TW104105712 A TW 104105712A TW 201539566 A TW201539566 A TW 201539566A
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- 239000000758 substrate Substances 0.000 title claims abstract description 142
- 238000003672 processing method Methods 0.000 title claims abstract description 25
- 238000005498 polishing Methods 0.000 claims abstract description 105
- 239000007788 liquid Substances 0.000 claims abstract description 89
- 239000002002 slurry Substances 0.000 claims abstract description 62
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000007517 polishing process Methods 0.000 claims abstract description 9
- 239000010802 sludge Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 26
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- 230000002378 acidificating effect Effects 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 claims description 5
- 239000012964 benzotriazole Substances 0.000 claims description 4
- 235000015165 citric acid Nutrition 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- 150000004985 diamines Chemical class 0.000 claims description 3
- 235000011090 malic acid Nutrition 0.000 claims description 3
- 239000001630 malic acid Substances 0.000 claims description 3
- 150000007524 organic acids Chemical class 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 229940081066 picolinic acid Drugs 0.000 claims description 3
- 235000002906 tartaric acid Nutrition 0.000 claims description 3
- 239000011975 tartaric acid Substances 0.000 claims description 3
- 150000003852 triazoles Chemical class 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- HNDVDQJCIGZPNO-RXMQYKEDSA-N D-histidine Chemical compound OC(=O)[C@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-RXMQYKEDSA-N 0.000 claims description 2
- 239000002738 chelating agent Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 239000002270 dispersing agent Substances 0.000 claims description 2
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 claims description 2
- 239000003607 modifier Substances 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- 150000003536 tetrazoles Chemical class 0.000 claims description 2
- 229910020203 CeO Inorganic materials 0.000 claims 1
- 150000003851 azoles Chemical class 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 235000005985 organic acids Nutrition 0.000 claims 1
- 230000007547 defect Effects 0.000 description 17
- 238000012545 processing Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 229910052902 vermiculite Inorganic materials 0.000 description 6
- 235000019354 vermiculite Nutrition 0.000 description 6
- 239000010455 vermiculite Substances 0.000 description 6
- HKGFOEUKNCRDRV-UHFFFAOYSA-N copper;quinoline-2-carboxylic acid Chemical compound [Cu].C1=CC=CC2=NC(C(=O)O)=CC=C21 HKGFOEUKNCRDRV-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- SMUQFGGVLNAIOZ-UHFFFAOYSA-N quinaldine Chemical compound C1=CC=CC2=NC(C)=CC=C21 SMUQFGGVLNAIOZ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- WWCDHKMARSDQDX-UHFFFAOYSA-N N1=C(C)C=CC2=CC=CC=C12.[Cu] Chemical compound N1=C(C)C=CC2=CC=CC=C12.[Cu] WWCDHKMARSDQDX-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- NTYJJOPFIAHURM-UHFFFAOYSA-N Histamine Chemical compound NCCC1=CN=CN1 NTYJJOPFIAHURM-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000012733 comparative method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229960001340 histamine Drugs 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical compound C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/007—Cleaning of grinding wheels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Detergent Compositions (AREA)
Abstract
本發明係關於一種基板處理方法,在根據一個實施例之基板處理方法中,安置於基板上之物件之待拋光表面於供應有漿料之拋光墊上拋光。在使用漿料之拋光製程之後,在向黏附有包括該漿料之殘餘物或該拋光墊之污泥之拋光墊上供應水的同時,將拋光墊上之物件之待拋光表面拋光。在使用水之拋光製程之後,藉由向拋光墊上供應沖洗液而清潔拋光墊上之物件之待拋光表面。
Description
本文中所描述之實施例大體上係關於一種基板處理方法。
最近,使用化學機械拋光(CMP)方法作為處理物件之待拋光表面的方法。基板表面上之二氧化矽膜、接觸插頭、金屬佈線及其類似物係藉由CMP方法平坦化。在供包括精細圖案之半導體裝置之用的基板處理方法中,需要解決之問題為減小缺陷密度及改良生產力。
作為相關技術中之基板處理方法,已知方法為,在藉由CMP方法平坦化基板表面之後,使用溶液執行擦光拋光,使用去離子水(DIW)或抑制劑溶液執行沖洗,使用漿料執行擦光拋光且使用DIW或抑制劑溶液執行沖洗。
然而,根據相關技術中之上述基板處理方法,幾乎無法充分清潔黏附於基板表面之殘餘物。此外,由於擦光拋光係在殘餘物未得到充分清潔的同時執行,因此可能在基板表面上產生刮痕。
在根據一個實施例之基板處理方法中,安置於基板上之物件之待拋光表面於供應有漿料之拋光墊上拋光。在使用漿料之拋光製程之後,在向黏附有包括漿料之殘餘物或拋光墊之污泥之拋光墊上供應水的同時,將拋光墊上之物件之待拋光表面拋光。在使用水之拋光製程之後,藉由向拋光墊上供應沖洗液而將拋光墊上之物件之待拋光表面
清潔。
根據實施例之基板處理裝置,基板表面可於同一壓板上依序使用漿料、水及沖洗液拋光。因此,相較於使用漿料、水及沖洗液於不同壓板上進行拋光之情況,可改良基板表面之處理量。
1‧‧‧固持器
2‧‧‧壓板
3‧‧‧拋光墊
4‧‧‧調節器
5‧‧‧漿料供應器
6‧‧‧水供應器
7‧‧‧沖洗液供應器
51‧‧‧儲集器
52‧‧‧管道
61‧‧‧儲集器
62‧‧‧管道
71‧‧‧儲集器
72‧‧‧管道
R‧‧‧殘餘物
S‧‧‧表面
S1‧‧‧Cu佈線
S2‧‧‧TEOS膜
S1‧‧‧步驟
S2‧‧‧步驟
S3‧‧‧步驟
S4‧‧‧步驟
S5‧‧‧步驟
S6‧‧‧步驟
W‧‧‧半導體基板/基板
圖1為說明根據一個實施例之基板處理裝置之結構的圖。
圖2為說明根據一個實施例之基板處理方法的流程圖。
圖3為描述用沖洗液移除殘餘物之方法的解釋圖。
圖4為描述用沖洗液移除殘餘物之方法的解釋圖。
圖5為說明根據第一實例之基板的橫截面圖。
圖6為銅-喹哪啶酸(Cu-quinaldic acid)錯合物之解釋圖。
圖7為銅-喹哪啶酸錯合物之解釋圖。
圖8為說明溶解度與殘餘物缺陷密度之間關係的圖。
圖9為說明溶解度與殘餘物缺陷密度之間關係的圖。
圖10為說明蝕刻速率與刮痕缺陷密度之間關係的圖。
圖11為說明基於根據第一實例之基板處理方法之測試結果的圖。
圖12為說明基於根據第一實例之基板處理方法之測試結果的圖。
圖13為說明基於根據第一實例之基板處理方法之測試結果的圖。
圖14為說明基於根據第一實例之基板處理方法之測試結果的圖。
圖15為說明根據第二實例之基板的橫截面圖。
圖16為說明根據第三實例之基板的橫截面圖。
現將參考附圖解釋實施例。本發明不限於實施例。
首先,將參考圖1描述根據一個實施例之基板處理裝置。在此應注意,圖1為說明根據該實施例之基板處理裝置之結構的圖。圖1中之基板處理裝置為藉由CMP方法拋光且平坦化物件之待拋光表面的裝置。待拋光物件可包括半導體基板(在下文中稱為「基板」)W及層壓於基板W上之材料層。在下文中,物件之待拋光表面簡稱為基板W之表面。
基板處理裝置包括固持器1、壓板2、拋光墊3、調節器4、漿料供應器5、水供應器6及沖洗液供應器7。
固持器(拋光頭)1係以使得基板W之表面面向拋光墊3(更具體而言,使得基板W之表面面向圖1之下側)的方式固持基板W。固持器1在擠壓基板W抵靠拋光墊3側邊的同時使基板W旋轉,且拋光基板W之表面。
壓板2包括圓盤狀可旋轉轉台。拋光墊3固定於壓板2上。
拋光墊3由諸如發泡聚胺甲酸酯之材料形成,且固定於壓板2上。拋光墊3之材料基於基板W之待拋光表面之材料品質選擇。
調節器(修整器)4包括經組態以擠壓拋光墊3表面,同時使拋光墊3旋轉之圓盤狀構件,且修整(平坦化)由拋光基板W產生之拋光墊3之不均勻度。以此方式,基板處理裝置可精確地平坦化基板W之表面。
漿料供應器5將漿料供應至拋光墊3上用於拋光基板W之表面。漿料供應器5包括儲存漿料之儲集器51及將儲集器51之漿料供應至拋光墊3上之管道52。漿料包括研磨粒及處理溶液。研磨粒使用例如SiO2(矽石)、Al2O3、CeO2、Mn2O3、金剛石及其類似物。此外,處理溶液包括例如基板W之改質劑、研磨粒之分散劑、界面活性劑、螯合劑及防蝕劑。研磨粒及處理溶液基於待拋光之基板W之材料品質選擇。
水供應器6將水供應至拋光墊3上用於拋光基板W之表面。水供應
器6包括儲存水之儲集器61及將儲集器61之水供應至拋光墊3上之管道62。水使用例如DIW。
沖洗液供應器7將沖洗液供應至拋光墊3上用於拋光基板W之表面。沖洗液供應器7包括儲存沖洗液之儲集器71及將儲集器71之沖洗液供應至拋光墊3上之管道72。沖洗液基於待拋光之基板W之材料品質及漿料組分選擇。稍後將詳細描述沖洗液。
如上文所描述,根據實施例之基板處理裝置,基板W之表面可於同一壓板2上依序使用漿料、水及沖洗液拋光。因此,相較於使用漿料、水及沖洗液於不同壓板2上進行拋光之情況,可改良基板W之表面處理量。
同時,除上述組件以外,基板處理裝置可包括供拋光用之漿料的收集器,且亦可與擦光拋光器、滾刷清潔器及沖洗清潔器中之至少一者整體式形成。
隨後,將參考圖2至圖4描述根據一個實施例之基板處理方法。在此應注意,圖2為說明根據該實施例之基板處理方法實例之流程圖。在下文中,將描述使用圖1中之基板處理裝置之情況。
根據該實施例,首先使用漿料拋光基板W之表面(步驟S1)。更具體而言,當將漿料自漿料供應器5供應至拋光墊3上的同時,固持器1使基板W之表面與拋光墊3接觸,且在擠壓基板W的同時使基板W旋轉。基板W之表面藉由此拋光且平坦化。漿料組分、漿料之供應速率、施加於基板W上之壓力(拋光負載)及拋光時間係基於基板W之材料品質及其類似因素選擇。
隨後,使用諸如DIW之水拋光基板W之表面(步驟S2)。更具體而言,當將水自水供應器6供應至拋光墊3上的同時,固持器1使基板W之表面與拋光墊3接觸,且在擠壓基板W的同時使基板W旋轉。藉由
此移除步驟S1中黏附於基板W之表面之殘餘物。此處提及之殘餘物包括漿料之研磨粒、拋光墊3之拋光污泥及其類似物。此外,在基板W之表面包括金屬佈線之情況下,殘餘物可包括由漿料組分產生之化合物(錯合物及不溶性聚集物)及包括於金屬佈線中之金屬。水之供應速率、施加於基板W上之壓力(拋光負載)及拋光時間係基於基板W之材料品質、漿料組分及其類似因素選擇。
隨後,使用沖洗液拋光基板W之表面(步驟S3)。更具體而言,在將沖洗液自沖洗液供應器7供應至拋光墊3上的同時,固持器1使基板W之表面與拋光墊3接觸,且在擠壓基板W的同時使基板W旋轉。藉由此進一步移除步驟S2中未經移除且仍黏附於基板W之表面之殘餘物。應注意,此時亦可向拋光墊3上供應少量水以及沖洗液。
現將描述沖洗液。沖洗液為移除黏附於基板W之表面之殘餘物的溶液且具有與漿料相同的酸性或鹼性特性。更具體而言,在漿料為酸性之情況下,沖洗液亦為酸性,且在漿料為鹼性情況下,沖洗液亦為鹼性。此係因為在漿料與沖洗液之酸性或鹼性度相反之情況下,更具體而言,在一者為酸性且另一者為鹼性之情況下,漿料與沖洗液之反應可產生鹽且可增加殘餘物。
此外,沖洗液對基板W之表面之至少一部分具有溶解特性。因此,在用沖洗液拋光基板W之表面之情況下,於該沖洗液中具有溶解特性之基板W之表面S的一部分溶解,且可如圖3中所說明移除黏附於該部分之殘餘物R。沖洗液可對基板W之整個表面具有溶解特性,或可選擇性地對基板W之表面之一部分(例如金屬佈線)具有溶解特性。應注意,為了保持基板表面之平坦度,藉由使用沖洗液拋光之待拋光基板表面之厚度較佳為10nm或小於10nm。
此外,沖洗液對黏附於基板W之表面之殘餘物之至少一部分具有溶解特性。因此,在用沖洗液拋光基板W之表面之情況下,殘餘物R
(沖洗液對其具有溶解特性)藉由如圖4中所說明之沖洗液溶解。因此,可移除殘餘物R。沖洗液可對所有類型之黏附於基板W之表面S的殘餘物具有溶解特性,或可選擇性地對一些類型之殘餘物(例如金屬錯合物)具有溶解特性。
應注意,沖洗液可僅對基板W之表面具有溶解特性或僅對黏附於基板W之表面之殘餘物具有溶解特性。沖洗液之組分、沖洗液之供應速率、施加於基板W上之壓力(拋光負載)及拋光時間係基於基板W之材料品質及漿料組分選擇。
在用沖洗液拋光基板W之表面之後,用由PVA及其類似物製成之滾刷清潔基板W之前表面及後表面(步驟S4)。更具體而言,在供應化學溶液的同時用滾刷清潔基板W,且在供應水的同時用滾刷清潔基板W。化學溶液可使用包括上述沖洗液之化學溶液。此外,水可使用DIW。藉由此移除黏附於基板W之殘餘物、漿料及沖洗液之組分。滾刷清潔可藉由具有滾刷及供應化學溶液及水之單元的滾刷清潔器(未說明)執行。在滾刷清潔中,可使用多種類型之化學溶液。在此情況下,使用化學溶液及水之清潔交替地執行。
隨後,用諸如DIW之水沖洗基板W之前表面及後表面(步驟S5),且隨後乾燥基板W(步驟S6)。
如上文所描述,根據該實施例之基板處理方法,可藉由用水及沖洗液拋光基板W之表面來減少黏附於基板W之表面之殘餘物。另外,由於殘餘物減少,因此可減少基板表面上因殘餘物損傷基板W之表面所產生之刮痕。因此,根據該實施例之基板處理方法,可減少基板表面之缺陷,籍此改良諸如記憶體、系統LSI、高速邏輯LSI及記憶-邏輯混合型LSI之半導體裝置的可靠性。
此外,在使用上述基板處理裝置之情況下,可改良基板處理之處理量,因為可在同一壓板2上依序使用漿料、水及沖洗液拋光基板
W之表面(步驟S1至步驟S3)。
應注意,使用漿料、水及沖洗液拋光基板表面可使用不同壓板執行。
在下文中,將參考圖式描述基板處理方法中所用之沖洗液之各別實例。
首先,將參考圖5至圖14描述第一實例。圖5為說明該實例中待拋光基板W之橫截面圖。如圖5中所說明,基板W之表面S具有Cu佈線S1及原矽酸四乙酯膜(在下文中稱為「TEOS膜」)S2。因此,根據該實例,使用沖洗液移除黏附於Cu佈線S1及TEOS膜S2之殘餘物。
一般而言,用於拋光Cu之漿料為鹼性的且包括喹哪啶酸、苯并***(在下文中稱為「BTA」)及其類似物。因此,在用漿料拋光Cu佈線S1之情況下,殘餘物係由包括於Cu佈線S1中之Cu及包括於漿料中之喹哪啶酸及BTA產生。舉例而言,由Cu及喹哪啶酸形成之銅-喹哪啶酸錯合物係作為殘餘物產生。此外,在包括於漿料中之研磨粒為諸如SiO2之矽石之情況下,產生包括銅-喹哪啶酸錯合物及矽石研磨粒之聚集物,如圖6中所說明。在BTA之情況下同樣發生上述情況,且產生Cu-BTA錯合物及聚集物。
因此,該實例中使用對上述錯合物具有溶解特性之鹼性沖洗液。在沖洗液對銅-喹哪啶酸錯合物具有溶解特性之情況下,將銅-喹哪啶酸錯合物溶解且移除,且另外亦將聚集物溶解且移除,如圖7中所說明。在Cu-BTA錯合物之情況下同樣發生上述情況。
此外,根據該實例,使用對Cu具有溶解特性之沖洗液。藉由溶解其表面可移除黏附於Cu佈線S1表面之殘餘物。
關於此類沖洗液,使用具有pH 8或高於pH 8且含有以下組分(A)至(F)之沖洗液。
(A)氫氧化四甲基銨
(B)選自包括乙二胺及1,2-二胺基丙烷之群的二胺
(C)選自包括乙二酸、檸檬酸、酒石酸、蘋果酸及吡啶甲酸之群的有機酸
(D)組胺酸或其衍生物
(E)選自包括苯并***、咪唑、***、四唑及其衍生物之群的至少一種
(F)水
上述組分(B)在過量添加之情況下可能腐蝕Cu佈線S1。因此,較佳含有具有0.0001質量%至0.4質量%之1,2-二胺基丙烷作為組分(B)。在使用含有此範圍內之1,2-二胺基丙烷之沖洗液之情況下,測試中證實可移除殘餘物而不腐蝕Cu佈線S1。此外,較佳含有檸檬酸作為組分(C)。此外,上述組分(D)在過量添加之情況下可實際上增加殘餘物。因此,較佳含有具有0.002質量%至3質量%之組胺酸作為組分(D)。在使用含有此範圍內之組胺酸之沖洗液之情況下,測試中證實可移除殘餘物而不使其增加。
此處應注意,圖8為說明上述沖洗液溶解度與殘餘物之間關係的圖。在圖8中,橫軸表示沖洗液相對於銅-喹哪啶酸錯合物而言之溶解度(mg/L),且縱軸表示表明基板表面單位面積中之殘餘物數量的殘餘物缺陷密度。如圖8中所說明,當沖洗液之溶解度增加時,殘餘物缺陷密度減少。因此,所需殘餘物缺陷密度可藉由調節沖洗液之溶解度獲得。
舉例而言,在基板W需要具有1.25或小於1.25之殘餘物缺陷密度之情況下,根據圖8中所說明之關係,可使用溶解度相對於銅-喹哪啶酸錯合物而言為600mg/L或大於600mg/L的沖洗液。
圖9為說明沖洗液與殘餘物溶解度之間關係的圖,與圖8相同。
在圖9中,橫軸表示沖洗液相對於Cu-BTA錯合物而言之溶解度(mg/L),且縱軸表示表明基板表面單位面積中之殘餘物數量的殘餘物缺陷密度。如圖9中所說明,當沖洗液之溶解度增加時,殘餘物缺陷密度減少。因此,所需殘餘物缺陷密度可藉由調節沖洗液之溶解度獲得。
舉例而言,在基板W需要1.25或小於1.25之殘餘物缺陷密度之情況下,根據圖9中所說明之關係,可使用溶解度相對於Cu-BTA錯合物而言為800mg/L或大於800mg/L之沖洗液。
圖10為說明沖洗液之蝕刻速率與刮痕之間關係的圖。在圖10中,橫軸表示沖洗液相對於Cu而言之蝕刻速率(nm/min),且縱軸表示表明基板表面單位面積中之刮痕數量的刮痕缺陷密度。如圖10中所說明,當蝕刻速率增加時,刮痕缺陷密度減少。因此,所需刮痕缺陷密度可藉由調節沖洗液之蝕刻速率獲得。
舉例而言,在基板W需要具有0.8或小於0.8之刮痕缺陷密度之情況下,根據圖10中所說明之關係,可使用蝕刻速率相對於Cu而言為0.1nm或大於0.1nm之沖洗液。
在下文中,將描述在藉由該實例之基板處理方法移除殘餘物之情況下的測試結果。圖11至圖14為說明測試結果的圖。測試在以下條件下執行。
基板處理裝置(CMP裝置)使用EBARA Corporation製造之FREX300E。
拋光墊使用Nitta Haas Incorporated製造之可發泡墊(IC1000)。
漿料使用JSR Corporation製造之矽石漿料(CMS84xx系列)。
圖11為說明乾燥基板後Cu佈線S1上殘餘物數量之圖。圖11之左側表示在採用根據該實例(其中使用上述沖洗液)之基板處理方法之情況下的殘餘物數量。圖11之右側表示在省略用沖洗液拋光(步驟S3)之情
況下的殘餘物數量。如圖11中所說明,採用該實例方法之情況的Cu佈線S1上之殘餘物數量比採用省略用沖洗液拋光之比較方法之情況少。
圖12為說明乾燥基板後TEOS膜S2上殘餘物數量之圖。圖12之左側表示在採用根據該實例(其中使用上述沖洗液)之基板處理方法之情況下的殘餘物數量。圖12之右側表示在省略用沖洗液拋光之情況下的殘餘物數量。如圖12中所說明,採用該實例方法之情況的TEOS膜S2上之殘餘物數量比採用省略用沖洗液拋光之比較方法之情況少。
圖13為說明乾燥基板後Cu佈線S1上殘餘物數量之圖。圖13之左側表示在採用根據該實例(其中使用上述沖洗液)之基板處理方法之情況下的殘餘物數量。圖13之右側表示在省略用水拋光(步驟S2)之情況下的殘餘物數量。如圖13中所說明,採用本實例方法之情況的Cu佈線S1上之殘餘物數量比採用省略用水拋光之比較方法之情況少。
圖14為說明乾燥基板後TEOS膜S2上殘餘物數量之圖。圖14之左側表示在採用根據該實例(其中使用上述沖洗液)之基板處理方法之情況下的殘餘物數量。圖14之右側表示在省略用水拋光之情況下的殘餘物數量。如圖14中所說明,採用該實例方法之情況的TEOS膜S2上之殘餘物數量比採用省略用水拋光之比較方法之情況少。
上述測試結果表明相較於僅執行一種拋光之情況,使用水拋光與沖洗液拋光之組合可有效移除殘餘物。
同時,在將表面處包括Cu佈線S1之基板W拋光之情況下(如該實例),以50hPa至300hPa拋光負載執行水拋光5秒或超過5秒,且以50hPa至300hPa拋光負載執行沖洗液拋光10秒或超過10秒,同時將沖洗液以100mL/min至500mL/min或大於500mL/min之供應速率滴注於拋光墊上。藉此可有效移除殘餘物。
此外,不僅在該實例中,在基板W之表面S上形成Cu佈線S1,而且可形成包括其他金屬(諸如W及Al)之金屬佈線。在此情況下,沖洗
液之組分可基於包括於金屬佈線中之金屬及用於拋光該金屬之漿料組分選擇。此外,可在基板W之表面S上任意形成諸如SiO2膜之介電膜代替TEOS膜S2。
隨後,將參考圖15描述第二實例。圖15為說明該實例中待拋光基板W之橫截面圖。如圖15中所說明,該實例中之基板W在其表面包括W佈線S3及TEOS膜S2,且使用沖洗液移除黏附於W佈線S3及TEOS膜S2之殘餘物。用於拋光W之漿料包括酸性及鹼性兩種類型。
在漿料為鹼性之情況下,可藉由用第一實例中描述之鹼性沖洗液執行沖洗液拋光及滾刷清潔、以與Cu佈線S1的相同方式自W佈線S3移除殘餘物。
另一方面,在漿料為酸性之情況下,由於鹽可由漿料與第一實例中描述之鹼性沖洗液反應產生,因此難以應用此類沖洗液進行沖洗液拋光。因此,在漿料為酸性之情況下,較佳使用對W及殘餘物具有溶解特性之酸性沖洗液。
同時,在滾刷清潔之情況下,藉由水拋光及沖洗液拋光自基板W移除漿料。因此,不管漿料之酸性或鹼性特性,可使用具有任何酸性或鹼性特性之化學溶液。
隨後,將參考圖16描述第三實例。圖16為說明該實例中待拋光基板W之橫截面圖。如圖16中所說明,根據該實例,基板W包括其表面之層間絕緣膜S5,且在層間絕緣膜S5內部嵌入由Cu及W製成之金屬佈線S4。換言之,該實例中僅拋光層間絕緣膜S5。因此,在沖洗液拋光中使用沖洗液移除黏附於層間絕緣膜S5之殘餘物。
層間絕緣膜S5為例如諸如SiO2之矽石膜。一般而言,在拋光層間絕緣膜S5之情況下,使用諸如KOH及氨水之處理溶液及包括諸如矽石
之研磨粒的鹼性漿料。因此,第一實例中描述之鹼性沖洗液可用於層間絕緣膜S5之沖洗液拋光。此外,可使用沖洗液執行滾刷清潔。
雖然已描述某些實施例,但此等實施例僅為了舉例呈現,且不意欲限制本發明之範疇。實際上,本文中所描述之新穎方法及系統可以多種其他形式實施;此外,在不背離本發明精神之情況下,可對本文中所描述之方法及系統的形式進行各種省略、替代及改變。隨附申請專利範圍及其等效物意欲涵蓋將落入本發明範疇及精神內之該等形式或修改。
S1‧‧‧步驟
S2‧‧‧步驟
S3‧‧‧步驟
S4‧‧‧步驟
S5‧‧‧步驟
S6‧‧‧步驟
Claims (12)
- 一種基板處理方法,其包含:將安置於基板上之物件之待拋光表面於供應有漿料之拋光墊上拋光;在使用該漿料之拋光製程之後,在向黏附有包括該漿料之殘餘物或該拋光墊之污泥之該拋光墊上供應水的同時,將該拋光墊上之該物件之該待拋光表面拋光;及使用該水之拋光製程之後,藉由向該拋光墊上供應沖洗液來清潔該拋光墊上之該物件之該待拋光表面。
- 如請求項1之方法,其中該沖洗液與該漿料具有相同酸性或鹼性特性。
- 如請求項1之方法,其中該沖洗液對該物件之該待拋光表面之至少一部分具有溶解特性。
- 如請求項1之方法,其中該物件在該表面包括Cu,且該沖洗液具有8或大於8之pH且包括以下組分(A)至(F),(A)氫氧化四甲基銨(B)選自包括乙二胺及1,2-二胺基丙烷之群的二胺(C)選自包括乙二酸、檸檬酸、酒石酸、蘋果酸及吡啶甲酸之群的有機酸(D)組胺酸或其衍生物(E)選自包括苯并***、咪唑、***、四唑及其衍生物之群的至少一種(F)水。
- 一種基板處理方法,其包含:表面上包括Cu之物件之該待拋光表面於供應有漿料之拋光墊 上拋光;在使用該漿料之拋光製程之後,在向黏附有包括該漿料之殘餘物或該拋光墊之污泥之該拋光墊上供應水的同時,將該表面包括Cu之該物件之該待拋光表面於該拋光墊上拋光;及使用該水之拋光製程之後,藉由向該拋光墊上供應沖洗液來清潔該拋光墊上之該物件之該待拋光表面,其中,該沖洗液具有8或大於8之pH且包括以下組分(A)至(F),(A)氫氧化四甲基銨(B)選自包括乙二胺及1,2-二胺基丙烷之群的二胺(C)選自包括乙二酸、檸檬酸、酒石酸、蘋果酸及吡啶甲酸之群的有機酸(D)組胺酸或其衍生物(E)選自包括苯并***、咪唑、***、四唑及其衍生物之群的至少一種(F)水。
- 如請求項1之方法,其中該漿料包括研磨粒及處理溶液。
- 如請求項6之方法,其中該研磨粒為SiO2、Al2O3、CeO2、Mn2O3及金剛石中之至少一者。
- 如請求項6之方法,其中該處理溶液為該待拋光物件之改質劑、該研磨粒之分散劑、界面活性劑、螯合劑及防蝕劑中之至少一者。
- 如請求項1之方法,其中該水為去離子水。
- 如請求項1之方法,其中該待拋光物件在同一拋光墊上經連續處理。
- 如請求項1之方法,其進一步包含在用該沖洗液拋光該表面之後,用滾刷清潔該物件之該待拋光表面。
- 如請求項1之方法,其中該沖洗液對該表面上殘餘物之至少一部分具有溶解特性。
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