TW201537633A - Heating device and plasma processing apparatus comprising the same - Google Patents
Heating device and plasma processing apparatus comprising the same Download PDFInfo
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本發明係關於一種加熱裝置及包含該加熱裝置之電漿處理裝置，其利用小型發熱體加熱目標物，且可有效加熱。 The present invention relates to a heating device and a plasma processing device including the same, which use a small heating element to heat a target and can be heated efficiently.
一般而言，該電漿處理裝置之特徵為具備：處理腔體，包括設置於其上方區域之電漿源區域以及位於該電漿源區域下方之處理空間；基台，配置於該處理空間內，用於載置處理目標物；處理氣體供應機構，用於供應處理氣體至該電漿源區域；電漿生成部，透過高頻電源使供應至該電漿生成部之處理氣體電漿化；電漿生成用高頻電源，用於供應高頻電源至該電漿源區域。 In general, the plasma processing apparatus is characterized by: a processing chamber including a plasma source region disposed in an upper region thereof and a processing space located below the plasma source region; and a base disposed in the processing space a processing gas supply mechanism for supplying a processing gas to the plasma source region, and a plasma generating portion for plasma-treating the processing gas supplied to the plasma generating portion through the high-frequency power source; A high frequency power source for plasma generation for supplying a high frequency power source to the plasma source region.
該電漿處理裝置，將供應電漿生成部之處理氣體電漿化，再利用電漿化之處理氣體，處理載置於處理空間內基台上之基板。 In the plasma processing apparatus, the processing gas supplied to the plasma generating unit is plasma-formed, and the plasma-treated processing gas is used to process the substrate placed on the substrate in the processing space.
此時，為使電漿處理開始後立即實現穩定處理，需於處理開始前將基板預熱，使基板溫度昇溫至處理中之平衡溫度。先前技術之基板加熱裝置，如下述專利文獻1所示之加熱裝置。 At this time, in order to achieve stable treatment immediately after the start of the plasma treatment, it is necessary to preheat the substrate before the start of the treatment to raise the substrate temperature to the equilibrium temperature during the treatment. The substrate heating device of the prior art is a heating device as shown in Patent Document 1 below.
該加熱裝置，由埋設於該基台之加熱器，以及向加熱器供電之加熱器電源所構成。加熱器，由碳等材料形成之燈絲，以及環繞該燈絲之陶瓷等材料製成之絶緣體構成。透過加熱器電源向燈絲通電，使其產生 焦耳熱達到加熱效果。另，產生焦耳熱所需之加熱器電源，於先前技術中，使用頻率為50Hz或60Hz之商業用交流電源(AC100V或200V)，或使用直流電源。 The heating device is composed of a heater embedded in the base and a heater power source that supplies power to the heater. The heater is composed of a filament formed of a material such as carbon, and an insulator made of a material such as a ceramic surrounding the filament. Powering the filament through the heater power supply to generate Joule heat reaches the heating effect. In addition, the heater power source required for generating Joule heat is used in the prior art, using a commercial AC power source (AC 100V or 200V) having a frequency of 50 Hz or 60 Hz, or using a DC power source.
【專利文獻1】日本專利公開平10-303185號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei 10-303185
然而，近年來，為取代以處理直徑為6吋~12吋之基板，並以大量生產為目的之電漿處理裝置，研發出以處理直徑為1吋以下之基板，並以多類型小量生產為目的之電漿處理裝置。此時，該處理腔體大小，以及載置基板之基台尺寸，必然只要小型即足夠。 However, in recent years, in order to replace the plasma processing apparatus for processing substrates having a diameter of 6 吋 to 12 , and mass production, a substrate having a diameter of 1 吋 or less has been developed and produced in various types and small quantities. A plasma processing device for the purpose. At this time, the size of the processing chamber and the size of the base on which the substrate is placed are necessarily sufficient as long as they are small.
然而，如上述先前技術般，於加熱器電源使用商業用交流電源或直流電源，且加熱器使用燈絲之加熱裝置中，為得到基板加熱至期待溫度所需之發熱量，燈絲之長度需對應其比電阻(電阻率)〔Ω．m〕，但要適應小型化之基台時，卻因長度受限。其問題癥結在於，加熱器大小顯然將大於基台大小，故無法因應裝置之小型化。 However, as in the prior art described above, in the heating device using the commercial AC power source or the DC power source for the heater power source and the heater using the filament, in order to obtain the heat amount required for the substrate to be heated to the desired temperature, the length of the filament needs to correspond to Specific resistance (resistivity) [Ω. m], but to adapt to the miniaturized abutment, but because of the limited length. The crux of the problem is that the size of the heater will obviously be larger than the size of the base, so it is not possible to cope with the miniaturization of the device.
本發明係鑑於以上實情，目的在於提供使用小型發熱體，且可有效加熱之加熱裝置，以及包含該裝置之電漿處理裝置。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a heating device which can be efficiently heated using a small heat generating body, and a plasma processing device including the same.
本發明為解決上述課題，提供一種加熱裝置，包括：一發熱體，包含一導體且該導體之電阻率ρ〔Ω．m〕與磁導率μ〔H /m〕之乘積ρ．μ〔Ω．H〕達8.0×10-13以上；以及一加熱用高頻電源，用於供應高頻電源至該發熱體。 In order to solve the above problems, the present invention provides a heating device comprising: a heating element comprising a conductor and a resistivity of the conductor ρ [Ω. m] is the product ρ of the magnetic permeability μ [H / m]. μ [Ω. H] is up to 8.0 × 10 -13 or more; and a heating high-frequency power source for supplying a high-frequency power source to the heat generating body.
向導體施加高頻電源時，會產生集膚效應(skin effect)現象，亦即電流僅能從表面穿透至固定深度為止之表皮層部分。此時，若以導體之直徑為D〔m〕、導體之長度為L〔m〕、表皮之深度為d〔m〕、電阻率為ρ〔Ω．m〕，導體之電阻值R1〔Ω〕將如下式所示。 When a high-frequency power source is applied to a conductor, a skin effect phenomenon occurs, that is, a portion of the skin layer where the current can only penetrate from the surface to a fixed depth. In this case, the diameter of the conductor is D [m], the length of the conductor is L [m], the depth of the skin is d [m], and the resistivity is ρ [Ω. m], the resistance value of the conductor R 1 [Ω] will be as shown in the following formula.
(數學公式1)R1=(ρ/d)．(L/(π．(D-d))) (Mathematical Formula 1) R 1 = ( ρ /d). (L/( π .(Dd)))
在此，直徑D〔m〕顯然較表皮深度d〔m〕大，也就是說，只要讓D≧d，電阻值R1〔Ω〕就會近似於下式。 Here, the diameter D [m] is obviously larger than the skin depth d [m], that is, as long as D ≧ d, the resistance value R 1 [Ω] is approximated by the following formula.
(數學公式2)R1≒(ρ/d)．(L/(π．D)) (Mathematical Formula 2) R 1 ≒( ρ /d). (L/( π .D))
另外，以導體之磁導率為μ〔H/m〕時，表皮深度d〔m〕如下式所示。 Further, when the magnetic permeability of the conductor is μ [H/m], the skin depth d [m] is as follows.
(數學公式3)d=(2ρ/(ω．μ))1/2 (Mathematical Formula 3) d=(2 ρ /( ω . μ )) 1/2
ω為角頻率〔rad/s〕。 ω is the angular frequency [rad/s].
另，因角頻率ω〔rad/s〕等於2πf(f為頻率〔Hz〕)、(數學公式4)故d=(ρ/(π．f．μ))1/2 In addition, since the angular frequency ω [rad/s] is equal to 2 π f (f is frequency [Hz]), (mathematical formula 4), d = ( ρ / ( π .f. μ )) 1/2
因此，電阻值R1〔Ω〕算式轉換如下。 Therefore, the resistance value R 1 [Ω] is converted as follows.
(數學公式5)R1=((f．ρ．μ)/π)1/2．(L/D))。 (Mathematical Formula 5) R 1 = ((f. ρ . μ ) / π ) 1/2 . (L/D)).
以各種如純鐵、高導磁合金(45Ni-Fe)、鋼、鎳、鎳鉻合金、304不鏽鋼(SUS304)、鉛、鋁、銅、銀等導體為發熱體，固定其長度L為0.15〔m〕、直徑D為0.03〔m〕、施加功率為30〔W〕，再個別計算a)施加頻率為13.56〔MHz〕高頻電源時、b)施加直流電時、c)施加商業用交流電(60Hz)(以下略稱為「交流電」)時，各電阻值〔Ω〕與電流〔A〕之結果如第2圖所示。 Conductors such as pure iron, high magnetic alloy (45Ni-Fe), steel, nickel, nickel-chromium alloy, 304 stainless steel (SUS304), lead, aluminum, copper, silver, etc. are used as heating elements, and their length L is fixed to 0.15 [ m], diameter D is 0.03 [m], applied power is 30 [W], and then separately calculated a) when the application frequency is 13.56 [MHz] high frequency power supply, b) when direct current is applied, c) commercial alternating current is applied (60 Hz) (hereinafter abbreviated as "AC"), the results of the respective resistance values [Ω] and current [A] are shown in Fig. 2.
施加高頻電源情況下之電阻值R1〔Ω〕，以該數學公式5算出。 The resistance value R 1 [Ω] in the case where a high-frequency power source is applied is calculated by the mathematical formula 5.
而施加直流電情況下之電阻值R2〔Ω〕，則以下式算出。 On the other hand, when the direct current is applied, the resistance value R 2 [Ω] is calculated by the following equation.
(數學公式6)R2=(4ρ．L)/(π．D2) (Mathematical Formula 6) R 2 = (4 ρ .L) / ( π .D 2 )
此外，施加交流電情況下之電阻值R3〔Ω〕，根據不同導體，若集膚效應造成之表皮深度，未滿該導體之半徑時，可根據以下數學公式7(同該數學公式5)算出，若表皮深度大於該導體之半徑時，則根據以下數學公式8(同該數學公式6)算出。 In addition, the resistance value R 3 [Ω] in the case of applying an alternating current, according to different conductors, if the skin depth caused by the skin effect is less than the radius of the conductor, it can be calculated according to the following mathematical formula 7 (same as the mathematical formula 5) If the skin depth is greater than the radius of the conductor, it is calculated according to the following mathematical formula 8 (same as the mathematical formula 6).
(數學公式7)R3=((f．ρ．μ)/π)1/2．(L/D)) (Mathematical Formula 7) R 3 = ((f. ρ . μ ) / π ) 1/2 . (L/D))
(數學公式8)R3=(4ρ．L)/(π．D2)。 (Mathematical Formula 8) R 3 = (4 ρ .L) / ( π . D 2 ).
如第2圖所示，無論導體材質為何，與施加直流電或交流電之情況相較，施加高頻電源時之電阻值〔Ω〕明顯大很多，此外，與施加直流電或交流電之情況相較，施加高頻電源可以在小電流之情況下，得到30〔W〕的功率。另外，使用電阻率ρ〔Ω．m〕與磁導率μ〔H/m〕之乘積ρ．μ〔Ω．H〕達8.0×10-13以上值之導體(純鐵、高導磁合金、鋼、鎳、鎳鉻合金以及304不鏽鋼(SUS304))之情況下，比其他導體(鉛、鋁、銅以及銀)在施加高頻電源時之電阻值〔Ω〕更大，且可以用更小電流得到30〔W〕的功率。 As shown in Fig. 2, regardless of the conductor material, the resistance value [Ω] is much larger when applying a high-frequency power source than when a direct current or an alternating current is applied, and is applied in comparison with the case where direct current or alternating current is applied. The high-frequency power supply can obtain 30 [W] of power at a small current. In addition, the resistivity ρ [Ω. m] and the product of magnetic permeability μ [H / m] ρ. μ[Ω. H] In the case of conductors of 8.0 × 10 -13 or higher (pure iron, high magnetic permeability alloy, steel, nickel, nickel-chromium alloy and 304 stainless steel (SUS304)), compared with other conductors (lead, aluminum, copper and silver) The resistance value [Ω] is larger when a high-frequency power source is applied, and 30 [W] power can be obtained with a smaller current.
例如，以304不鏽鋼(SUS304)與鋁比較，施加高頻電源時，304不鏽鋼(SUS304)之電阻值為9.9(約10)〔Ω〕，鋁之電阻值為1.8〔Ω〕，僅為前者之1/5左右。另，欲獲得30〔W〕功率所需之電流，304不鏽鋼(SUS304)為55.1〔A〕，鋁則需要127.6〔A〕(約2.3倍)。另先前技術中，一般多使用鎳鉻合金為發熱體，與鎳鉻合金使用傳統直流電或交流電時顯示之電阻值(0.228〔Ω〕)相較，若發熱體使用304不鏽鋼(SUS304)，且加熱電源使用高頻電源時，該304不鏽鋼(SUS304)顯示出約43倍之電阻值(9.9〔Ω〕)。本發明與先前技術之加熱機構相較，可獲得極大之電阻值，亦可使用小電流獲得必要之焦耳熱。304不鏽鋼(SUS304)僅需55.1〔A〕之高頻電流，即可獲得(30〔W〕之功率，欲達到同樣功率，鎳鉻合金需使用443.1〔A〕之直流電流或交流電流(約8倍)。 For example, when 304 high-temperature power is applied to 304 stainless steel (SUS304) compared with aluminum, the resistance of 304 stainless steel (SUS304) is 9.9 (about 10) [Ω], and the resistance of aluminum is 1.8 [Ω], which is only the former. 1/5 or so. In addition, to obtain the current required for 30 [W] power, 304 stainless steel (SUS304) is 55.1 [A], and aluminum requires 127.6 [A] (about 2.3 times). In the prior art, a nickel-chromium alloy is generally used as a heating element, and compared with a resistance value (0.228 [Ω]) displayed when a conventional direct current or alternating current is used for a nickel-chromium alloy, if the heating element is 304 stainless steel (SUS304) and heated. When the power supply uses a high-frequency power source, the 304 stainless steel (SUS304) exhibits a resistance value of about 43 times (9.9 [Ω]). Compared with the heating mechanism of the prior art, the present invention can obtain a very large resistance value, and can also obtain a necessary Joule heat using a small current. 304 stainless steel (SUS304) only needs 55.1 [A] high-frequency current, you can get (30 [W] power, to achieve the same power, nickel-chromium alloy needs to use 443.1 [A] DC current or AC current (about 8 Double).
如此，使用高頻電源做為加熱電源時，因發熱體顯示較大之電阻值〔Ω〕，故可實現該發熱體之小型化。另一方面，若以直流電或交流電做為加熱電源使用時，為了抑制電流流動，需加大電阻值〔Ω〕，而為了加大電阻值〔Ω〕，則必須加長發熱體之長度。換句話說，發熱體不得不朝大型化發展。而使用高頻電源時，若發熱體含有該ρ．μ〔Ω．H〕為8.0×10-13以上之導體，與含其他導體之發熱體相較，顯示出更大之電阻值，故可使該發熱體小型化。 As described above, when the high-frequency power source is used as the heating power source, the heating element exhibits a large resistance value [Ω], so that the heating element can be miniaturized. On the other hand, when direct current or alternating current is used as the heating power source, in order to suppress the current flow, it is necessary to increase the resistance value [Ω], and in order to increase the resistance value [Ω], the length of the heating element must be lengthened. In other words, the heating element has to be developed toward large-scale. When a high frequency power supply is used, if the heating element contains the ρ. μ[Ω. H] is a conductor of 8.0 × 10 -13 or more, and exhibits a larger resistance value than a heating element containing other conductors, so that the heating element can be miniaturized.
另，欲得到同樣功率，也就是焦耳熱時，與直流電以及交流電相較，使用高頻電源做為加熱電源所需之電流較小，此外，若使用含ρ．μ〔Ω．H〕為8.0×10-13以上之導體的發熱體，可以在更小電流之情況下，得到同樣的焦耳熱。 In addition, in order to obtain the same power, that is, Joule heat, compared with direct current and alternating current, the current required to use the high frequency power supply as the heating power source is small, and if ρ. μ[Ω. H] is a heating element of a conductor of 8.0 × 10 -13 or more, and the same Joule heat can be obtained with a smaller current.
如上用於處理直徑1吋以下之基板的電漿處理裝置當中，基台因應基板而小型化，因此選擇加熱電源時，直流電與交流電並不適合，高頻電源則較適用。另，選擇發熱體時，若需要加大電阻值之設定，且以更小電流獲得同樣之焦耳熱，建議使用該ρ．μ〔Ω．H〕為8.0×10-13以上之導體。 In the plasma processing apparatus for processing a substrate having a diameter of 1 吋 or less as described above, since the base is miniaturized in response to the substrate, when the heating power source is selected, the direct current and the alternating current are not suitable, and the high frequency power supply is suitable. In addition, when selecting a heating element, if it is necessary to increase the setting of the resistance value and obtain the same Joule heat with a smaller current, it is recommended to use the ρ. μ[Ω. H] is a conductor of 8.0 × 10 -13 or more.
如此，本發明之加熱裝置，可使用小型發熱體，且可有效加熱目標物。 As described above, the heating device of the present invention can use a small heat generating body and can efficiently heat the target.
另，該ρ．μ〔Ω．H〕達8.0×10-13以上值之導體，可由鐵、鈷、鎳、釓、不鏽鋼、鐵鈷合金(Fe-Co)、鐵鎳合金(Fe-Ni)、鐵鈷鎳合金(Fe-Co-Ni)、鈷鎳合金(Co-Ni)、鐵矽合金(Fe-Si)、鐵錳鋅合金(Fe-Mn-Zn)、鐵鎳鋅合金(Fe-Ni-Zn)、鐵鈷鎳鉻合金(Fe-Co-Ni-Cr)、鐵鈷 鎳磷合金(Fe-Co-Ni-P)、鐵鈷硼合金(Fe-Co-B)、鐵鈷鉻硼合金(Fe-Co-Cr-B)、鐵鈷釩合金(Fe-Co-V)等強磁體、鎳鉻合金或由一種以上之上述金屬與鑭系元素所組合之合金所構成。另，該發熱體除具備該導體之外，亦可採用將導體以鍍上適當之鍍材之方式。因施加適當頻率之高頻電源時會產生集膚效應，故於鍍上鍍材之情況下，建議其鍍材之厚度大於該表皮厚度。 In addition, the ρ . μ [Ω. H] Conductor with a value of 8.0×10 -13 or higher, which may be iron, cobalt, nickel, ruthenium, stainless steel, iron-cobalt alloy (Fe-Co), iron-nickel alloy (Fe-Ni), iron-cobalt-nickel alloy (Fe-Co) -Ni), cobalt-nickel alloy (Co-Ni), iron-bismuth alloy (Fe-Si), iron-manganese-zinc alloy (Fe-Mn-Zn), iron-nickel-zinc alloy (Fe-Ni-Zn), iron-cobalt-nickel-chromium Alloy (Fe-Co-Ni-Cr), iron cobalt nickel phosphorus alloy (Fe-Co-Ni-P), iron cobalt boron alloy (Fe-Co-B), iron cobalt chromium boron alloy (Fe-Co-Cr- B) A strong magnet such as an iron-cobalt-vanadium alloy (Fe-Co-V), a nickel-chromium alloy, or an alloy of one or more of the above metals and a lanthanoid combination. Further, in addition to the conductor, the heating element may be formed by plating a conductor with a suitable plating material. When a high-frequency power source of appropriate frequency is applied, a skin effect is generated. Therefore, in the case of plating a plating material, it is recommended that the thickness of the plating material be larger than the thickness of the skin.
另，本發明中，欲使該發熱體顯示更大之電阻值〔Ω〕，其導體之ρ．μ〔Ω．H〕為4.0×10-11以上者更佳。 Further, in the present invention, the heat generating body is intended to exhibit a larger electric resistance value [Ω], and the conductor ρ . μ [Ω. H] is preferably 4.0 × 10 -11 or more.
另，高頻電源之頻率建議為100kHz以上。如上述數學公式5所示，發熱體之電阻值〔Ω〕與其長度、高頻電源頻率成比例。在此，透過設定高頻電源之頻率至100kHz以上，可使該發熱體之長度，設定為因應小型化所需長度。另，從因應小型化之意義看來，該頻率建議為300kHz以上，而10MHz以上者更佳。 In addition, the frequency of the high frequency power supply is recommended to be 100 kHz or more. As shown in the above mathematical formula 5, the resistance value [Ω] of the heating element is proportional to its length and the frequency of the high-frequency power source. Here, by setting the frequency of the high-frequency power source to 100 kHz or more, the length of the heating element can be set to a length required for miniaturization. In addition, from the point of view of miniaturization, the frequency is recommended to be 300 kHz or more, and those above 10 MHz are better.
另，該加熱裝置，建議具備一電流調整器，用於調整自該加熱用高頻電源供應至該發熱體之電流。透過電流調整器調整供應至發熱體之電流，可調整發熱體之發熱量，亦即使加熱溫度維持在適當溫度。 Further, the heating device is preferably provided with a current regulator for adjusting the current supplied from the heating high-frequency power source to the heating element. The current supplied to the heating element is adjusted by the current regulator to adjust the amount of heat generated by the heating element, even if the heating temperature is maintained at an appropriate temperature.
另，本發明係關於一種電漿處理裝置，包括一處理腔體，其內部設置一處理室；一基台，配置於該處理室內，用於載置一處理目標物；一處理氣體供應機構，用於供應處理氣體至該處理室內；一電漿生成部，以高頻電源將供應至該處理室內之處理氣體電漿化；以及一電漿生成用高頻電源，用於供應高頻電源至該電漿生成部；此外，更具備該加熱裝置， 其中該發熱體，在以絶緣體包覆或埋設於絶緣體中之狀態下，附設於該基台或埋設於該基台內。 In addition, the present invention relates to a plasma processing apparatus including a processing chamber having a processing chamber disposed therein, a base disposed in the processing chamber for loading a processing target, and a processing gas supply mechanism. Providing a processing gas to the processing chamber; a plasma generating unit that plasma-treats the processing gas supplied to the processing chamber; and a high-frequency power source for plasma generation for supplying the high-frequency power to The plasma generating unit; further comprising the heating device, The heat generating body is attached to the base or embedded in the base in a state of being covered with an insulator or embedded in the insulator.
如上所述，該加熱裝置使用小型發熱體，且可有效加熱目標物。因此，即便使用該加熱裝置之電漿處理裝置，為處理直徑為1吋以下之基板之小型裝置，且使用小尺寸基台載置基板，該發熱體，仍可在以絶緣體包覆或埋設於絶緣體中之狀態下，附設於該基台或埋設於該基台內。另，透過該加熱裝置之使用，可使基台上之基板，在短時間內加熱至目標溫度。 As described above, the heating device uses a small heat generating body and can efficiently heat the target. Therefore, even if the plasma processing apparatus using the heating device is a small device for processing a substrate having a diameter of 1 吋 or less, and the substrate is placed using a small-sized base, the heating element can be covered or buried with an insulator. In the state of the insulator, it is attached to the base or embedded in the base. Further, by using the heating device, the substrate on the base can be heated to a target temperature in a short time.
另，本發明中，關於該加熱用高頻電源之架構，建議連接該基台與該發熱體，以供應高頻電源至該基台與該發熱體。在電漿處理裝置中，向基台施加高頻電源，施加偏壓電位至該基台，如此基台便在被施加偏壓電位之狀態下進行基板處理。在此，若使用同一高頻電源，供應高頻電源至基台與發熱體，可透過高頻電源之共用，減少零件，進而減少電漿處理裝置之成本。 Further, in the present invention, regarding the structure of the heating high-frequency power source, it is recommended to connect the base and the heat generating body to supply a high-frequency power source to the base and the heat generating body. In the plasma processing apparatus, a high-frequency power source is applied to the base, and a bias potential is applied to the base, so that the substrate is subjected to substrate processing while a bias potential is applied. Here, if the same high-frequency power source is used, the high-frequency power source is supplied to the base station and the heating element, and the high-frequency power source can be shared to reduce the number of parts, thereby reducing the cost of the plasma processing apparatus.
另，本發明中，關於該加熱用高頻電源之架構，建議透過一連接開關器，同時連接至該基台與該發熱體，藉由切換該連接開關器，選擇連接該基台或該發熱體，以供應高頻電源至該基台或該發熱體。如上述，電漿處理裝置中之該加熱裝置，為了自電漿處理開始後立即實現穩定處理，於處理開始前便先預熱基板。因此，最好自處理開始前之預熱時間，便供應高頻電源至該加熱裝置。另一方面，基台建議應在被施加偏壓電位之狀態下，於處理中被施加高頻電源。在此，透過上述架構，在處理開始前之預熱階段，先供應高頻電源至發熱體，而當在處理中，再供應高頻電 源至基台。如此，可抑制多餘耗電，在能源效率上表現更好。 In the present invention, it is proposed that the structure of the high-frequency power source for heating is connected to the base station and the heat generating body through a connection switch, and the base switch or the heat is selectively connected by switching the connection switch. Body to supply high frequency power to the base or the heating element. As described above, in the plasma processing apparatus, in order to achieve stable treatment immediately after the start of the plasma treatment, the substrate is preheated before the start of the treatment. Therefore, it is preferable to supply a high frequency power source to the heating device from the warm-up time before the start of the process. On the other hand, the base station suggests that a high-frequency power source should be applied during processing in a state where a bias potential is applied. Here, through the above structure, the high frequency power supply is first supplied to the heating element in the preheating stage before the start of the process, and when the processing is performed, the high frequency power is supplied again. Source to the base station. In this way, excess power consumption can be suppressed and performance is better in energy efficiency.
本發明相關之加熱裝置，可使用小型發熱體，且可有效加熱目標物。另，該加熱裝置可適用於處理直徑為1吋以下之基板的小型電漿處理裝置，即便載置基之基台尺寸較小，發熱體亦可在以絶緣體包覆或埋設於絶緣體中之狀態下，附設於該基台或埋設於該基台內，另，透過該加熱裝置之使用，可使基台上之基板，於短時間內加熱至目標溫度。另，在電漿處理裝置使用該加熱裝置之情況下，需供應高頻電源使基台被施加偏壓電位時，透過共用供應高頻電源至發熱體之高頻電源，與供應至基台之高頻電源，可減少電源，進而降低電漿處理裝置之成本。 The heating device according to the present invention can use a small heat generating body and can efficiently heat the target. In addition, the heating device can be applied to a small-sized plasma processing apparatus for processing a substrate having a diameter of 1 吋 or less. Even if the base of the mounting base is small in size, the heating element can be covered with an insulator or embedded in the insulator. In this state, it is attached to the base or embedded in the base, and the use of the heating device allows the substrate on the base to be heated to a target temperature in a short time. In addition, in the case where the plasma processing apparatus uses the heating apparatus, when a high-frequency power source is required to apply a bias potential to the base, the high-frequency power source that supplies the high-frequency power source to the heating element is supplied and supplied to the base station. The high frequency power supply reduces the power supply and reduces the cost of the plasma processing unit.
1‧‧‧電漿處理裝置 1‧‧‧Plastic processing unit
1’‧‧‧電漿處理裝置 1'‧‧‧ Plasma processing unit
1”‧‧‧電漿處理裝置 1"‧‧‧ Plasma processing unit
2‧‧‧處理腔體 2‧‧‧Processing chamber
3‧‧‧上殼體 3‧‧‧Upper casing
3a‧‧‧電漿源區域 3a‧‧‧ Plasma source area
4‧‧‧下殼體 4‧‧‧ Lower case
4a‧‧‧處理空間 4a‧‧‧Processing space
4b‧‧‧排氣口 4b‧‧‧Exhaust port
5‧‧‧線圈(電漿生成部) 5‧‧‧ coil (plasma generation department)
6‧‧‧第一高頻電源供應機構 6‧‧‧First high frequency power supply mechanism
7‧‧‧處理氣體供應機構 7‧‧‧Processing gas supply
8‧‧‧供應管 8‧‧‧Supply tube
9‧‧‧基台 9‧‧‧Abutment
10‧‧‧昇降機構 10‧‧‧ Lifting mechanism
11‧‧‧排氣管 11‧‧‧Exhaust pipe
12‧‧‧排氣裝置 12‧‧‧Exhaust device
13‧‧‧加熱裝置 13‧‧‧ heating device
13’‧‧‧加熱裝置 13’‧‧‧ heating unit
13”‧‧‧加熱裝置 13”‧‧‧ heating device
14‧‧‧發熱體 14‧‧‧heating body
15‧‧‧保持體 15‧‧‧ Keeping body
16‧‧‧第二高頻電源供應機構 16‧‧‧Second high frequency power supply mechanism
17‧‧‧電流調整器 17‧‧‧ Current Regulator
18‧‧‧底座組件 18‧‧‧Base assembly
19‧‧‧伸縮密封 19‧‧‧ Telescopic seal
20‧‧‧電源開關 20‧‧‧Power switch
21‧‧‧第三高頻電源供應機構 21‧‧‧ Third high frequency power supply mechanism
K‧‧‧基板 K‧‧‧Substrate
【第1圖】本發明之一具體實施例之電漿處理裝置概略結構說明圖。 Fig. 1 is a schematic view showing the structure of a plasma processing apparatus according to an embodiment of the present invention.
【第2圖】本發明效果說明所需之說明圖。 [Fig. 2] An explanatory view of the effect of the present invention will be described.
【第3圖】本發明之另一具體實施例之電漿處理裝置概略結構說明圖。 Fig. 3 is a schematic view showing the structure of a plasma processing apparatus according to another embodiment of the present invention.
【第4圖】本發明之又一具體實施例之電漿處理裝置概略結構說明圖。 Fig. 4 is a view showing the schematic configuration of a plasma processing apparatus according to still another embodiment of the present invention.
以下針對本發明之具體實施方式，以圖示進行說明。第1圖為本實施方式相關之電漿處理裝置概略結構說明圖。 Hereinafter, specific embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a schematic view showing the configuration of a plasma processing apparatus according to the present embodiment.
如第1圖所示，本實施例之一電漿處理裝置1，包括一處理腔體2、一線圈(電漿生成部)5、一第一高頻電源供應機構6、一處理氣體 供應機構7、一基台9、一昇降機構10、一排氣裝置12以及一加熱裝置13。 As shown in FIG. 1, a plasma processing apparatus 1 of the present embodiment includes a processing chamber 2, a coil (plasma generating portion) 5, a first high-frequency power supply mechanism 6, and a processing gas. The supply mechanism 7, a base 9, a lifting mechanism 10, an exhaust device 12, and a heating device 13.
該處理腔體2，由一上殼體3及一下殼體4所構成。其中該上殼體3配置有一電漿源區域3a；另該下殼體4配置有一處理空間4a，係位於該電漿源區域3a下方並與該電漿源區域3a相連。另，該下殼體4之該處理空間4a內，配置有該基台9。另外，該下殼體4是接地的。另，由電漿源區域3a及處理空間4a形成一處理室。 The processing chamber 2 is composed of an upper casing 3 and a lower casing 4. The upper casing 3 is provided with a plasma source region 3a; the lower casing 4 is disposed with a processing space 4a located below the plasma source region 3a and connected to the plasma source region 3a. Further, the base 9 is disposed in the processing space 4a of the lower casing 4. In addition, the lower casing 4 is grounded. Further, a processing chamber is formed by the plasma source region 3a and the processing space 4a.
該處理氣體供應機構7，透過一供應管8，連接至該上殼體3之電漿源區域3a，以供應處理氣體。處理氣體之種類，乃根據基板之處理來設定，無任何限制，可設定供應1種或2種以上之處理氣體，若供應2種以上之處理氣體，則是透過連接個別處理氣體來源之各供應管8，向該電漿源區域3a內供應各種處理氣體。 The process gas supply mechanism 7 is connected to the plasma source region 3a of the upper casing 3 through a supply pipe 8 to supply a process gas. The type of the processing gas is set according to the processing of the substrate, and any one or two or more kinds of processing gases may be supplied without any limitation. If two or more kinds of processing gases are supplied, the respective supplies of the respective processing gas sources are connected. The tube 8 supplies various processing gases into the plasma source region 3a.
該線圈5，被纏繞於該上殼體3之外側，本實施例之線圈匝數為三匝，其一端與該第一高頻電源供應機構6相連接，另一端則接地。另，第一高頻電源供應機構6亦接地。如此，自第一高頻電源供應機構6供應高頻電源至該線圈5後，在該電漿源區域3a內產生感應電場，使供應至該電漿源區域3a之處理氣體，透過該感應電場而電漿化。自該第一高頻電源供應機構6供應至線圈5之高頻電源的頻率，一般為13.56MHz，唯本發明不限於此。線圈5之匝數，亦不限於三匝。 The coil 5 is wound around the outer side of the upper casing 3. The number of turns of the coil of the present embodiment is three turns, one end of which is connected to the first high-frequency power supply mechanism 6, and the other end is grounded. In addition, the first high frequency power supply mechanism 6 is also grounded. Thus, after the high frequency power supply mechanism 6 supplies the high frequency power supply to the coil 5, an induced electric field is generated in the plasma source region 3a, and the processing gas supplied to the plasma source region 3a is transmitted through the induced electric field. And plasma. The frequency of the high frequency power supplied from the first high frequency power supply mechanism 6 to the coil 5 is generally 13.56 MHz, but the present invention is not limited thereto. The number of turns of the coil 5 is also not limited to three turns.
另，連接至該基台9之該昇降機構10，係由汽缸等構成，負責基台9之昇降，透過配置於該處理空間4a內之一底座組件18保持固定。另，該排氣裝置12由真空幫浦等構成，透過一排氣管11與下殼 體4上形成之一排氣口4b相連，用於排除處理腔體2內之氣體，使該電漿源區域3a及處理空間4a內呈真空狀態。 Further, the elevating mechanism 10 connected to the base 9 is constituted by a cylinder or the like, and is responsible for lifting and lowering of the base 9, and is fixed by a base unit 18 disposed in the processing space 4a. In addition, the exhaust device 12 is constituted by a vacuum pump or the like, and is transmitted through an exhaust pipe 11 and a lower casing. One of the exhaust ports 4b is formed in the body 4 for removing the gas in the processing chamber 2, so that the plasma source region 3a and the processing space 4a are in a vacuum state.
該加熱裝置13，係固定設置於該基台9之下方，係由具備電絶緣性之一保持體15、以螺旋狀成形且埋設於該保持體15內之一發熱體14、與該基台9及該發熱體14之一端相連之一第二高頻電源供應機構16以及與該發熱體14之另一端相連之一電流調整器17等所構成。 The heating device 13 is fixed to the lower side of the base 9 and is formed of a heat-insulating body 15 and a heat-generating body 14 which is formed in a spiral shape and embedded in the holding body 15 and the base. 9 is a second high-frequency power supply mechanism 16 connected to one end of the heat generating body 14, and a current regulator 17 connected to the other end of the heat generating body 14.
供應該基台9及該發熱體14頻率為100kHz以上高頻電源之該第二高頻電源供應機構16是接地的。該基台9係可同時透過該底座組件18及下殼體4而接地、透過第二高頻電源供應機構16連接至基台9之電路而接地，以及透過發熱體14及電流調整器17之電路而接地。另，該電流調整器17由放大器等構成，可透過該放大器控制訊號之調整，而調整流過發熱體14之電流。 The second high-frequency power supply mechanism 16 that supplies the base 9 and the high-frequency power source having a frequency of 100 kHz or more is grounded. The base 9 can be grounded through the base assembly 18 and the lower casing 4 at the same time, connected to the circuit of the base 9 through the second high-frequency power supply mechanism 16 to be grounded, and transmitted through the heating element 14 and the current regulator 17 Circuit and ground. Further, the current regulator 17 is constituted by an amplifier or the like, and the current flowing through the heating element 14 can be adjusted by the adjustment of the amplifier control signal.
該發熱體14由電阻率ρ〔Ω．m〕與磁導率μ〔H/m〕之乘積ρ．μ〔Ω．H〕達8.0×10-13以上之一導體所構成；該導體，係可由鐵、鈷、鎳、釓、不鏽鋼、鐵鈷合金(Fe-Co)、鐵鎳合金(Fe-Ni)、鐵鈷鎳合金(Fe-Co-Ni)、鈷鎳合金(Co-Ni)、鐵矽合金(Fe-Si)、鐵錳鋅合金(Fe-Mn-Zn)、鐵鎳鋅合金(Fe-Ni-Zn)、鐵鈷鎳鉻合金(Fe-Co-Ni-Cr)、鐵鈷鎳磷合金(Fe-Co-Ni-P)、鐵鈷硼合金(Fe-Co-B)、鐵鈷鉻硼合金(Fe-Co-Cr-B)、鐵鈷釩合金(Fe-Co-V)等強磁體、鎳鉻合金或由一種以上之上述金屬與鑭系元素所組合之合金所構成。另，發熱體14，係可採用將導體以鍍上適當鍍材之方式。因施加適當頻率之高頻電源時會產生集膚 效應，故於鍍上鍍材之情況下，建議其鍍材之厚度大於該表皮厚度。 The heating element 14 is made of a resistivity ρ [Ω. m] and the product of magnetic permeability μ [H / m] ρ. μ[Ω. H] is composed of one conductor of 8.0×10 -13 or more; the conductor may be made of iron, cobalt, nickel, ruthenium, stainless steel, iron-cobalt alloy (Fe-Co), iron-nickel alloy (Fe-Ni), iron-cobalt Nickel alloy (Fe-Co-Ni), cobalt-nickel alloy (Co-Ni), iron-bismuth alloy (Fe-Si), iron-manganese-zinc alloy (Fe-Mn-Zn), iron-nickel-zinc alloy (Fe-Ni-Zn) ), iron cobalt nickel chromium alloy (Fe-Co-Ni-Cr), iron cobalt nickel phosphorus alloy (Fe-Co-Ni-P), iron cobalt boron alloy (Fe-Co-B), iron cobalt chromium boron alloy ( Fe-Co-Cr-B), a ferromagnetic material such as an iron-cobalt-vanadium alloy (Fe-Co-V), a nickel-chromium alloy, or an alloy composed of one or more of the above metals and a lanthanoid combination. Further, in the heating element 14, a conductor may be plated with a suitable plating material. When a high-frequency power source of appropriate frequency is applied, a skin effect is generated. Therefore, in the case of plating a plating material, it is recommended that the thickness of the plating material be larger than the thickness of the skin.
另，構成該保持體15之絶緣體材料，係可由氧化鎂、氧化鋁、氧化鋯、雲母等、陶瓷或聚醯亞胺、矽氧樹脂等樹脂所構成。另，第1圖中之符號19為一伸縮密封。 Further, the insulator material constituting the holding body 15 may be made of a resin such as magnesium oxide, aluminum oxide, zirconium oxide or mica, or a ceramic, a polyimide or a silicone resin. In addition, reference numeral 19 in Fig. 1 is a telescopic seal.
具備以上結構之電漿處理裝置1處理步驟包括：載置基板K於基台9上；透過排氣裝置12，使處理腔體2內呈真空狀態；同時利用該昇降機構10，使該基台9上昇至適當位置；由第二高頻電源供應機構16向該基台9以及該發熱體14供應高頻電源。高頻電源被輸出後，發熱體14開始發熱，並利用該熱能，透過保持體15及基台9，將基板K加熱。另，為使基板K能在目標時間內加熱至目標溫度，透過該電流調整器17，調整流過該發熱體14之電流，以使基板K預熱。 The processing step of the plasma processing apparatus 1 having the above structure includes: placing the substrate K on the base 9; passing the exhaust device 12 to bring the inside of the processing chamber 2 into a vacuum state; and simultaneously using the lifting mechanism 10 to make the base 9 is raised to an appropriate position; the high frequency power supply is supplied from the second high frequency power supply mechanism 16 to the base 9 and the heat generating body 14. After the high-frequency power source is output, the heating element 14 starts to generate heat, and the substrate K is heated by the heat transfer through the holder 15 and the base 9. Further, in order to allow the substrate K to be heated to the target temperature within the target time, the current flowing through the heat generating body 14 is adjusted by the current regulator 17 to preheat the substrate K.
接著，透過處理氣體供應機構7，供應適當處理氣體至該電漿源區域3a內，同時，自該第一高頻電源供應機構6供應高頻電源至該線圈5，以使供應至電漿源區域3a內之處理氣體電漿化。如此，以電漿化之處理氣體對基板K進行適當處理。另此時，透過電漿之生成，對基板9施加偏壓電位，使電漿中之離子被該偏壓電位吸引，以對基板K進行處理。 Then, through the processing gas supply mechanism 7, a suitable processing gas is supplied into the plasma source region 3a, and at the same time, a high-frequency power source is supplied from the first high-frequency power supply mechanism 6 to the coil 5 to be supplied to the plasma source. The process gas in zone 3a is plasmated. In this manner, the substrate K is appropriately treated with the plasma treatment gas. At this time, by the generation of plasma, a bias potential is applied to the substrate 9, and ions in the plasma are attracted by the bias potential to process the substrate K.
基板K處理後，將電漿處理裝置1回復至初始狀態。 After the substrate K is processed, the plasma processing apparatus 1 is returned to the initial state.
如上所述，欲得到同樣功率，也就是焦耳熱時，與直流電以及交流電相較，使用高頻電源做為加熱電源所需之電流較小。另，若使用其ρ．μ〔Ω．H〕為8.0×10-13以上之導體的發熱體14，可以比一般的方法在更小電流之情況下，得到同樣的焦耳熱。此外，於該導體使用高 頻電源時之電阻值較大，因此，在欲得到相同電阻值之情況下，可使該發熱體小型化。 As described above, in order to obtain the same power, that is, Joule heat, the current required to use the high-frequency power source as the heating power source is smaller than that of the direct current and the alternating current. Also, if you use its ρ. μ[Ω. H] is a heating element 14 of a conductor of 8.0 × 10 -13 or more, and the same Joule heat can be obtained at a smaller current than a general method. Further, when the high-frequency power source is used for the conductor, the resistance value is large. Therefore, when the same resistance value is to be obtained, the heat generating body can be miniaturized.
本實施例在加熱裝置13之發熱體14，係使用上述導體，以此施加高頻電源至第二高頻電源供應機構16，故可實現發熱體14之小型化。另，因僅需小電流即可將基板K加熱至目標溫度，故可在能源效率良好之情況下，對該基板K進行加熱。 In the present embodiment, the heat generating body 14 of the heating device 13 uses the above-described conductor to apply the high-frequency power source to the second high-frequency power supply mechanism 16, so that the heat generating body 14 can be miniaturized. Further, since the substrate K can be heated to the target temperature with only a small current, the substrate K can be heated with good energy efficiency.
另，為使該電漿處理裝置1處理直徑為1吋以下之基板K，而朝小型化裝置發展時，因該發熱體14之尺寸亦可小型化，故可配合受該基板K影響，而小型化之該基台9。 In addition, when the plasma processing apparatus 1 processes the substrate K having a diameter of 1 Å or less and is developed toward a miniaturized device, the size of the heating element 14 can be reduced, so that it can be affected by the substrate K. The base 9 is miniaturized.
另，透過電流調整器17調整供應至發熱體14之電流，可調整發熱體14之發熱量，亦即使加熱溫度維持在適當溫度。 Further, the current supplied to the heating element 14 is adjusted by the current regulator 17, so that the amount of heat generated by the heating element 14 can be adjusted, and even if the heating temperature is maintained at an appropriate temperature.
另，本實施例中，施加於基台9偏壓電位所需之高頻電源，以及加熱基台9所需之電源，可共同使用第二高頻電源供應機構16，如此，相較於先前技術需要分別獨立使用偏壓電位用高頻電源以及加熱用之交流電源或直流電源，更可減少電源，進而降低電漿處理裝置1之成本。 In addition, in the present embodiment, the high-frequency power source required for biasing the potential of the base 9 and the power source required for heating the base 9 can use the second high-frequency power supply mechanism 16 in common, as compared with In the prior art, it is necessary to independently use a high-frequency power source for a bias potential and an AC power source or a DC power source for heating, thereby further reducing the power source and thereby reducing the cost of the plasma processing apparatus 1.
另如上所述，該發熱體14在被施加高頻電源時，其電阻值〔Ω〕與其長度、高頻電源頻率成比例。因此，在欲得到相同電阻值之情況下，高頻電源之頻率愈高，該發熱體14之長度愈短，亦即可小型化。由此觀點看來，透過該第二高頻電源供應機構16供應之高頻電源的頻率，建議為如上述之100kHz以上，300kHz以上者更佳，10MHz以上最好。 Further, as described above, when the high-frequency power source is applied to the heat generating body 14, the resistance value [Ω] is proportional to the length thereof and the high-frequency power source frequency. Therefore, in the case where the same resistance value is to be obtained, the higher the frequency of the high-frequency power source, the shorter the length of the heating element 14, and the smaller the size. From this point of view, the frequency of the high-frequency power source supplied through the second high-frequency power supply unit 16 is preferably 100 kHz or more as described above, more preferably 300 kHz or more, and most preferably 10 MHz or more.
以上僅針對本發明之一具體實施例進行說明，本發明之實施 方式不限於此。 The above is only for the specific embodiment of the present invention, and the implementation of the present invention The method is not limited to this.
如本發明亦可採取如第3圖所示一電漿處理裝置1’之實施例。此外，於該電漿處理裝置1’中，與上述之電漿處理裝置1相同之構成元件，皆標示以相同符號。 An embodiment of a plasma processing apparatus 1' as shown in Fig. 3 can also be employed as in the present invention. Further, in the plasma processing apparatus 1', the same constituent elements as those of the above-described plasma processing apparatus 1 are denoted by the same reference numerals.
該電漿處理裝置1’之架構包括：具備一電源開關20之一加熱裝置13’，該第二高頻電源供應機構16，透過該電源開關20，連接該基台9及發熱體14；第二高頻電源供應機構16，透過切換電源開關20，選擇連接至基台9或發熱體14，以供應高頻該基台9或發熱體14電源。為了自電漿處理開始後，立即實現對基台9之穩定加熱，於處理開始前便先預熱基板K。因此，最好自處理開始前之預熱時間，便供應高頻電源至該發熱體14。另一方面，基台9建議應在被施加偏壓電位之狀態下，於處理中被施加高頻電源。在此，設置該電源開關20，透過其開關切換，在處理開始前之預熱階段，先供應高頻電源至發熱體14，而在處理中，則供應高頻電源至基台9。如此，可抑制多餘耗電，在能源效率上表現更好。 The structure of the plasma processing apparatus 1' includes: a heating device 13' having a power switch 20, the second high-frequency power supply mechanism 16 is connected to the base 9 and the heating element 14 through the power switch 20; The two-high-frequency power supply unit 16 is selectively connected to the base 9 or the heating element 14 by switching the power switch 20 to supply the high-frequency power of the base 9 or the heating element 14. In order to achieve stable heating of the base 9 immediately after the start of the plasma treatment, the substrate K is preheated before the start of the treatment. Therefore, it is preferable to supply a high-frequency power source to the heat generating body 14 from the warm-up time before the start of the process. On the other hand, the base 9 suggests that a high-frequency power source should be applied during the process in a state where a bias potential is applied. Here, the power switch 20 is provided, and the switching of the switch is performed. In the warm-up phase before the start of the process, the high-frequency power source is supplied to the heat generating body 14, and in the process, the high-frequency power source is supplied to the base station 9. In this way, excess power consumption can be suppressed and performance is better in energy efficiency.
另，本發明亦可採取第4圖所示一電漿處理裝置1”之實施例。此外，該電漿處理裝置1”中，與上述之電漿處理裝置1相同之構成元件，皆標示以相同符號。 In addition, the present invention can also adopt an embodiment of a plasma processing apparatus 1" shown in Fig. 4. In addition, in the plasma processing apparatus 1", the same constituent elements as the above-described plasma processing apparatus 1 are marked with The same symbol.
該電漿處理裝置1”之一加熱裝置13”，分別由供應基台9之高頻電源，以及供應發熱體14之高頻電源所構成。其中，第二高頻電源供應機構16供應高頻電源至基台9，而一第三高頻電源供應機構21則供應高頻電源至發熱體14。 One of the plasma processing apparatuses 1" heating means 13" is composed of a high frequency power supply of the supply base 9 and a high frequency power supply for supplying the heat generating body 14. The second high frequency power supply mechanism 16 supplies the high frequency power supply to the base station 9, and the third high frequency power supply mechanism 21 supplies the high frequency power supply to the heat generating body 14.
另，上述各實施例中，發熱體14被埋設於保持體15內，該保持體15附設於基台9之下方，唯本發明不限於此，將包含發熱體14之保持體15埋設於基台中亦可。或者，發熱體14不埋設於保持體15，而將發熱體14以絶緣體包覆，再附設於該基台9之下方，或埋設於基台9中皆可。 Further, in each of the above embodiments, the heat generating body 14 is embedded in the holding body 15, and the holding body 15 is attached to the lower side of the base 9, but the present invention is not limited thereto, and the holding body 15 including the heat generating body 14 is buried in the base. Taichung is also available. Alternatively, the heating element 14 is not embedded in the holding body 15, and the heating element 14 is covered with an insulator, and is attached to the lower side of the base 9 or embedded in the base 9.
另，上述之電漿處理裝置1、1’、1”中，使用具備線圈5之感應耦合電漿(inductively coupled plasma,ICP)式電漿處理裝置，唯本發明不限於此。本發明亦可通過具備兩平板電極之電容耦合電漿(capacitively coupled plasma，CCP)式電漿處理裝置等，利用高頻電源之所有電漿處理裝置，使其具象化。 Further, in the above-described plasma processing apparatuses 1, 1', 1", an inductively coupled plasma (ICP) type plasma processing apparatus including a coil 5 is used, but the present invention is not limited thereto. A plasma-coupled plasma (CCP) type plasma processing apparatus having two flat electrodes is used to visualize all of the plasma processing apparatuses of the high-frequency power source.
另，作為處理目標之基板K，係可為矽、碳化矽、藍寶石、化合物半導體、玻璃、樹脂等構成之基板。 Further, the substrate K to be treated may be a substrate made of tantalum, tantalum carbide, sapphire, a compound semiconductor, glass, or resin.
另，儘管加熱裝置13係適用於電漿處理裝置1、1’與1”，唯本發明不限於此，其可單獨使用，亦可適用於其他裝置。 Further, although the heating device 13 is applied to the plasma processing devices 1, 1' and 1", the present invention is not limited thereto, and it may be used alone or in other devices.
1‧‧‧電漿處理裝置 1‧‧‧Plastic processing unit
2‧‧‧處理腔體 2‧‧‧Processing chamber
3‧‧‧上殼體 3‧‧‧Upper casing
3a‧‧‧電漿源區域 3a‧‧‧ Plasma source area
4‧‧‧下殼體 4‧‧‧ Lower case
4a‧‧‧處理空間 4a‧‧‧Processing space
4b‧‧‧排氣口 4b‧‧‧Exhaust port
5‧‧‧線圈(電漿生成部) 5‧‧‧ coil (plasma generation department)
6‧‧‧第一高頻電源供應機構 6‧‧‧First high frequency power supply mechanism
7‧‧‧處理氣體供應機構 7‧‧‧Processing gas supply
8‧‧‧供應管 8‧‧‧Supply tube
9‧‧‧基台 9‧‧‧Abutment
10‧‧‧昇降機構 10‧‧‧ Lifting mechanism
11‧‧‧排氣管 11‧‧‧Exhaust pipe
12‧‧‧排氣裝置 12‧‧‧Exhaust device
13‧‧‧加熱裝置 13‧‧‧ heating device
14‧‧‧發熱體 14‧‧‧heating body
15‧‧‧保持體 15‧‧‧ Keeping body
16‧‧‧第二高頻電源供應機構 16‧‧‧Second high frequency power supply mechanism
17‧‧‧電流調整器 17‧‧‧ Current Regulator
18‧‧‧底座組件 18‧‧‧Base assembly
19‧‧‧伸縮密封 19‧‧‧ Telescopic seal
K‧‧‧基板 K‧‧‧Substrate
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