TW201537630A - Semiconductor device - Google Patents
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- TW201537630A TW201537630A TW103111554A TW103111554A TW201537630A TW 201537630 A TW201537630 A TW 201537630A TW 103111554 A TW103111554 A TW 103111554A TW 103111554 A TW103111554 A TW 103111554A TW 201537630 A TW201537630 A TW 201537630A
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Abstract
Description
本發明是有關於一種積體電路，且特別是有關於一種半導體元件。 This invention relates to an integrated circuit and, more particularly, to a semiconductor component.
隨著積體電路技術的演進，為了減少晶片(chip)的尺寸，越來越多的測試焊墊(test pad)被移至切割道(scribe line)。然而，一旦測試焊墊被移至切割道，將內部晶片訊號連接至外部焊墊的困難度也會提高。 With the evolution of integrated circuit technology, in order to reduce the size of the chip, more and more test pads are moved to the scribe line. However, once the test pad is moved to the scribe line, the difficulty of connecting the internal wafer signal to the external pad will also increase.
習知的做法是利用最上層的金屬層與大塊的氧化物層來製作互連結構。然而，在沿著切割道將多個晶片切割的過程中，會產生許多不規則的裂縫或龜裂，而這些裂縫會沿著氧化物層裂開而破壞晶片的內部元件，導致晶片的效能降低。 It is a common practice to make an interconnect structure using the uppermost metal layer and the bulk oxide layer. However, during the cutting of multiple wafers along the scribe line, many irregular cracks or cracks are generated, which crack along the oxide layer and destroy the internal components of the wafer, resulting in reduced wafer performance. .
有鑑於此，本發明提供一種半導體元件，其互連結構的組成以金屬層及導電插塞為主，而非習知的大塊氧化物，因此可避免切割時所產生的龜裂或裂縫破壞晶片的內部元件的問題。 In view of the above, the present invention provides a semiconductor device in which the interconnection structure is mainly composed of a metal layer and a conductive plug, instead of a conventional bulk oxide, thereby avoiding cracks or cracks generated during cutting. The problem with the internal components of the wafer.
本發明提供一種半導體元件，其包括至少一晶片、切割道、保護環、裂縫中止環以及互連結構。切割道環繞晶片。保護環配置於所述晶片與所述切割道之間且具有至少一開口。裂縫中止環配置於所述切割道與所述保護環之間，且所述裂縫中止環與所述開口相通。互連結構穿過所述保護環的所述開口且連接所述晶片中的內部元件與所述切割道中的外部元件，其中所述互連結構是由多個金屬層與多個導電插塞交替堆疊而成。 The present invention provides a semiconductor component including at least one wafer, a dicing street, a guard ring, a crack stop ring, and an interconnect structure. The scribe line surrounds the wafer. A guard ring is disposed between the wafer and the scribe line and has at least one opening. A crack stop ring is disposed between the cutting passage and the guard ring, and the crack stop ring communicates with the opening. An interconnect structure passes through the opening of the guard ring and connects internal components in the wafer with external components in the scribe lane, wherein the interconnect structure is alternated by a plurality of metal layers and a plurality of conductive plugs Stacked.
在本發明的一實施例中，上述互連結構至所述開口之側壁的距離相同。 In an embodiment of the invention, the distance between the interconnect structure and the sidewall of the opening is the same.
在本發明的一實施例中，上述互連結構至所述開口之側壁的距離遞增或遞減。 In an embodiment of the invention, the distance of the interconnect structure to the sidewall of the opening is increased or decreased.
在本發明的一實施例中，上述互連結構包括穿過開口的主體部以及至少一延伸部，所述延伸部位於所述開口的一側且與所述主體部連接。 In an embodiment of the invention, the interconnect structure includes a body portion passing through the opening and at least one extension portion, the extension portion being located at one side of the opening and connected to the body portion.
在本發明的一實施例中，上述主體部的延伸方向與所述延伸部的延伸方向不同。 In an embodiment of the invention, the extending direction of the main body portion is different from the extending direction of the extending portion.
在本發明的一實施例中，上述主體部的延伸方向與所述延伸部的延伸方向垂直。 In an embodiment of the invention, the extending direction of the main body portion is perpendicular to the extending direction of the extending portion.
在本發明的一實施例中，上述互連結構的形狀為直線狀、T型、H型或階梯狀。 In an embodiment of the invention, the interconnect structure has a linear shape, a T shape, an H shape, or a step shape.
在本發明的一實施例中，上述互連結構的組成與所述保護環的組成相同。 In an embodiment of the invention, the composition of the interconnect structure is the same as the composition of the guard ring.
在本發明的一實施例中，上述內部元件包括內部焊墊。 In an embodiment of the invention, the internal component includes an internal pad.
在本發明的一實施例中，上述外部元件包括外部焊墊或測試焊墊。 In an embodiment of the invention, the external component comprises an external pad or a test pad.
基於上述，本發明的互連結構中，於X方向及Y方向上均以金屬層及導電插塞取代習知的大塊氧化物，因此可有效阻擋切割時所產生的龜裂或裂縫穿透進入晶片中主動區的問題。如此一來，可大幅提高晶片的效能，增加競爭力。 Based on the above, in the interconnect structure of the present invention, the metal oxide layer and the conductive plug are substituted for the conventional bulk oxide in the X direction and the Y direction, thereby effectively blocking cracking or crack penetration during cutting. The problem of entering the active area in the wafer. As a result, the performance of the wafer can be greatly improved and the competitiveness can be increased.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.
10、20、30、40‧‧‧半導體元件 10, 20, 30, 40‧‧‧ semiconductor components
100‧‧‧晶片 100‧‧‧ wafer
102‧‧‧切割道 102‧‧‧Cut Road
104‧‧‧保護環 104‧‧‧Protection ring
105‧‧‧開口 105‧‧‧ openings
106‧‧‧裂縫中止環 106‧‧‧ crack stop ring
108、208、308、408‧‧‧互連結構 108, 208, 308, 408‧‧‧ interconnection structure
108a、208a‧‧‧主體部 108a, 208a‧‧‧ Main body
108b、108c、208b‧‧‧延伸部 108b, 108c, 208b‧‧‧ extensions
110‧‧‧內部元件 110‧‧‧Internal components
112‧‧‧外部元件 112‧‧‧External components
CP1、CP2、CP3‧‧‧導電插塞 CP1, CP2, CP3‧‧‧ conductive plug
M1、M2、M3、TM1、TM2‧‧‧金屬層 M1, M2, M3, TM1, TM2‧‧‧ metal layers
OX1、OX2、OX3‧‧‧氧化物 OX1, OX2, OX3‧‧‧ oxide
S‧‧‧基底 S‧‧‧ base
STI‧‧‧淺溝渠隔離結構 STI‧‧‧ shallow trench isolation structure
圖1是依照本發明的一實施例的一種半導體元件的上視示意圖。 1 is a top plan view of a semiconductor device in accordance with an embodiment of the present invention.
圖1A和圖1B是分別沿圖1的A-A’線和B-B’線的剖面示意圖。 1A and 1B are schematic cross-sectional views taken along line A-A' and line B-B' of Fig. 1, respectively.
圖2是依照本發明的另一實施例的一種半導體元件的上視示意圖。 2 is a top plan view of a semiconductor device in accordance with another embodiment of the present invention.
圖3是依照本發明的又一實施例的一種半導體元件的上視示意圖。 3 is a top plan view of a semiconductor device in accordance with still another embodiment of the present invention.
圖4是依照本發明的再一實施例的一種半導體元件的上視示意圖。 4 is a top plan view of a semiconductor device in accordance with still another embodiment of the present invention.
圖1是依照本發明的一實施例的一種半導體元件的上視 示意圖。圖1A和圖1B是分別沿圖1的A-A’線和B-B’線的剖面示意圖。 1 is a top view of a semiconductor device in accordance with an embodiment of the present invention. schematic diagram. 1A and 1B are schematic cross-sectional views taken along line A-A' and line B-B' of Fig. 1, respectively.
請參照圖1、圖1A及1B，本發明的半導體元件10具有多個晶片100，且晶片100之間以切割道102分隔，以便在切割後可形成獨立的晶片。在此以左側的晶片100說明之，其中切割道102環繞晶片100，其它的晶片100亦有類似的結構。 Referring to FIGS. 1, 1A and 1B, the semiconductor device 10 of the present invention has a plurality of wafers 100, and the wafers 100 are separated by dicing streets 102 so that individual wafers can be formed after dicing. Here, the wafer 100 on the left side is illustrated, wherein the scribe line 102 surrounds the wafer 100, and the other wafers 100 have a similar structure.
本發明的半導體元件10更包括多個保護環(protection ring)104、多個裂縫中止環(crack stop ring)106以及多個互連結構(interconnection structure)108。 The semiconductor device 10 of the present invention further includes a plurality of protection rings 104, a plurality of crack stop rings 106, and a plurality of interconnect structures 108.
至少一保護環104配置於各晶片100與對應的切割道102之間且具有至少一開口105。各保護環104是由多個金屬層與多個導電插塞交替堆疊而成。金屬層的材料包括銅、鋁或其合金等。導電插塞的材料包括鎢、銅、鈦、鉭、氮化鈦或氮化鉭等。在圖1、圖1A以及圖1B中，各保護環104具有兩個開口105且各自包括位於基底S上之交替堆疊的三層金屬層M1~M3與三個導電插塞CP1~CP3，但本發明並不以此為限。換言之，本發明並不限定開口、金屬層、導電插塞的數量。在一實施例中，於保護環104中，各導電插塞的兩側配置有氧化層。氧化層的材料包括氧化矽等。更具體言之，如圖1B所示，條狀導電插塞CP1的兩側配置有兩個 條狀氧化層OX1，條狀導電插塞CP2的兩側配置有兩個條狀氧化層OX2，條狀導電插塞CP3的兩側配置有兩個條狀氧化層OX3。 At least one guard ring 104 is disposed between each wafer 100 and the corresponding scribe line 102 and has at least one opening 105. Each guard ring 104 is formed by alternately stacking a plurality of metal layers and a plurality of conductive plugs. The material of the metal layer includes copper, aluminum or an alloy thereof and the like. The material of the conductive plug includes tungsten, copper, titanium, tantalum, titanium nitride or tantalum nitride. In FIG. 1, FIG. 1A and FIG. 1B, each guard ring 104 has two openings 105 and each comprises three stacked metal layers M1 to M3 and three conductive plugs CP1 to CP3 which are alternately stacked on the substrate S, but The invention is not limited to this. In other words, the invention does not limit the number of openings, metal layers, and conductive plugs. In an embodiment, in the guard ring 104, an oxide layer is disposed on both sides of each of the conductive plugs. The material of the oxide layer includes ruthenium oxide and the like. More specifically, as shown in FIG. 1B, two strips are disposed on both sides of the strip-shaped conductive plug CP1. Strip oxidation layer OX1, two strip-shaped oxide layers OX2 are disposed on both sides of the strip-shaped conductive plug CP2, and two strip-shaped oxide layers OX3 are disposed on both sides of the strip-shaped conductive plug CP3.
至少一裂縫中止環106配置於各切割道102與對應的保護環104之間，且裂縫中止環106與開口105相通。在此實施例中，各裂縫中止環106與對應的保護環104接觸，但本發明並不以此為限。在另一實施例中(未繪示)，各裂縫中止環106未與對應的保護環104接觸。在一實施例中，裂縫中止環106與開口105內均未配置有任何材料層。因此，保護環104的開口105也可視為裂縫中止環106的一部分，且此裂縫中止環106更延伸至部分的晶片102中。 At least one crack stop ring 106 is disposed between each of the cutting passes 102 and the corresponding guard ring 104, and the crack stop ring 106 is in communication with the opening 105. In this embodiment, each crack stop ring 106 is in contact with the corresponding guard ring 104, but the invention is not limited thereto. In another embodiment (not shown), each crack stop ring 106 is not in contact with a corresponding guard ring 104. In one embodiment, neither the crack stop ring 106 nor the opening 105 is provided with any material layers. Thus, the opening 105 of the guard ring 104 can also be considered a portion of the crack stop ring 106, and the crack stop ring 106 extends further into a portion of the wafer 102.
至少一互連結構108穿過保護環104的開口105且連接晶片100中的內部元件110與切割道102中的外部元件112。如圖1所示，互連結構108可包括穿過開口105的主體部108a以及開口105兩側的二延伸部108b、108c。互連結構108的主體部108a筆直地通過開口105。換言之，互連結構108的主體部108a至開口105側壁的距離相同。延伸部108b、108c分別與主體部108a的兩端連接。更具體言之，延伸部108b可位於切割道102中，而延伸部108c可位於晶片100中。在圖1的實施例中，延伸部108c未與保護環104接觸，而延伸部108b與裂縫中止環106接觸，但本發明並不以此為限。在另一實施例中(未繪示)，延伸部108c也可以與保護環104接觸。在又一實施例中(未繪示)，主體部108a也可更延伸至切割道102中，使得延伸部108b未與裂縫中止環106 接觸。 At least one interconnect structure 108 passes through the opening 105 of the guard ring 104 and connects the inner component 110 in the wafer 100 with the outer component 112 in the scribe lane 102. As shown in FIG. 1, the interconnect structure 108 can include a body portion 108a that passes through the opening 105 and two extensions 108b, 108c that are on opposite sides of the opening 105. The body portion 108a of the interconnect structure 108 passes straight through the opening 105. In other words, the distance from the body portion 108a of the interconnect structure 108 to the sidewalls of the opening 105 is the same. The extending portions 108b and 108c are respectively connected to both ends of the main body portion 108a. More specifically, the extension 108b can be located in the scribe line 102 and the extension 108c can be located in the wafer 100. In the embodiment of FIG. 1, the extension 108c is not in contact with the guard ring 104, and the extension 108b is in contact with the crack stop ring 106, but the invention is not limited thereto. In another embodiment (not shown), the extension 108c can also be in contact with the guard ring 104. In yet another embodiment (not shown), the body portion 108a may also extend into the cutting channel 102 such that the extension portion 108b does not overlap the crack stop ring 106. contact.
此外，主體部108a的延伸方向與延伸部108b、108c的 延伸方向不同。在一實施例中，主體部108a的延伸方向與延伸部108b、108c的延伸方向垂直。舉例來說，主體部108a的延伸方向例如是X方向，而延伸部108b、108c的延伸方向例如是Y方向。 Further, the extending direction of the main body portion 108a and the extending portions 108b, 108c The direction of extension is different. In an embodiment, the direction in which the body portion 108a extends is perpendicular to the direction in which the extensions 108b, 108c extend. For example, the extending direction of the main body portion 108a is, for example, the X direction, and the extending direction of the extending portions 108b, 108c is, for example, the Y direction.
在一實施例中，互連結構108是由多個金屬層與多個導 電插塞交替堆疊而成。在此實施例中，考慮到製程可利用性(process availability)，互連結構108的組成可與保護環104的組成相同。更具體言之，互連結構108各自包括(例如但不限於)位於淺溝渠隔離結構STI上之交替堆疊的三層金屬層M1~M3與三個導電插塞CP1~CP3。在一實施例中，在互連結構108中，各導電插塞的兩側配置有氧化層。氧化層的材料包括氧化矽等。更具體言之，如圖1A、1B所示，條狀導電插塞CP1的兩側配置有兩個條狀氧化層OX1，條狀導電插塞CP2的兩側配置有兩個條狀氧化層OX2，條狀導電插塞CP3的兩側配置有兩個條狀氧化層OX3。當然，視客戶需要，互連結構108的組成也可以與保護環104的組成不同。 In an embodiment, the interconnect structure 108 is composed of a plurality of metal layers and a plurality of leads The electric plugs are alternately stacked. In this embodiment, the composition of the interconnect structure 108 can be the same as the composition of the guard ring 104 in view of process availability. More specifically, the interconnect structures 108 each include, for example, without limitation, three stacked metal layers M1 - M3 and three conductive plugs CP1 - CP3 on the shallow trench isolation structure STI. In an embodiment, in the interconnect structure 108, oxide layers are disposed on both sides of each of the conductive plugs. The material of the oxide layer includes ruthenium oxide and the like. More specifically, as shown in FIGS. 1A and 1B, two strip-shaped oxide layers OX1 are disposed on both sides of the strip-shaped conductive plug CP1, and two strip-shaped oxide layers OX2 are disposed on both sides of the strip-shaped conductive plug CP2. Two strip-shaped oxide layers OX3 are disposed on both sides of the strip-shaped conductive plug CP3. Of course, the composition of the interconnect structure 108 may also differ from the composition of the guard ring 104 depending on the needs of the customer.
內部元件110例如是內部焊墊。外部元件112例如是外 部焊墊或測試焊墊。互連結構108可透過例如最上層的金屬層TM1、TM2分別與內部元件110、外部元件112電性連接。在此實施例中，最上層的金屬層TM1、TM2以及互連結構108與保護環104中的金屬層M3可形成為同一層。然而，本發明並不以此為限。 最上層的金屬層TM1、TM2也可以藉由打線(wire bonding)而形成於晶片100上。 Internal component 110 is, for example, an internal pad. The external component 112 is, for example, external Pad or test pad. The interconnect structure 108 can be electrically connected to the internal component 110 and the external component 112 through, for example, the uppermost metal layers TM1 and TM2. In this embodiment, the uppermost metal layers TM1, TM2 and the interconnect structure 108 and the metal layer M3 in the guard ring 104 may be formed in the same layer. However, the invention is not limited thereto. The uppermost metal layers TM1, TM2 may also be formed on the wafer 100 by wire bonding.
特別要說明的是，與習知的互連結構相比，本發明的互連結構可效防止切割時所產生的龜裂或裂縫穿透進入晶片中主動區的問題。發明人發現，在晶片切割時所產生的龜裂或裂縫，大多會沿著以非晶矽或不規則形式存在的氧化物而裂開。因此，若能有效減少氧化物的比例，則可有效防止切割時所產生的龜裂。 In particular, the interconnect structure of the present invention is effective in preventing cracks or cracks generated during cutting from penetrating into the active region of the wafer as compared to conventional interconnect structures. The inventors have found that cracks or cracks generated during wafer dicing are mostly cracked along oxides present in amorphous or irregular forms. Therefore, if the ratio of the oxide can be effectively reduced, the crack generated at the time of cutting can be effectively prevented.
在此實施例中，互連結構108之主體部108a的兩側均未配置有材料層，或者，可視為部***縫中止環106(或開口105)配置於互連結構108之主體部108a的兩側。此部分的裂縫中止環106(或開口105)可有效阻擋裂縫的行進。此外，在本發明的互連結構108中，以金屬層及導電插塞取代習知的大塊氧化物，由於大幅減少氧化物的比例，因此可有效防止切割時所產生的龜裂現象。換言之，互連結構108中的金屬層及導電插塞可有效阻擋裂縫的行進。 In this embodiment, both sides of the main body portion 108a of the interconnect structure 108 are not provided with a material layer, or two portions of the crack stop ring 106 (or the opening 105) may be disposed on the main body portion 108a of the interconnect structure 108. side. The crack stop ring 106 (or opening 105) of this portion effectively blocks the travel of the crack. Further, in the interconnect structure 108 of the present invention, the conventional bulk oxide is replaced by a metal layer and a conductive plug, and since the ratio of the oxide is greatly reduced, the cracking phenomenon at the time of cutting can be effectively prevented. In other words, the metal layers and conductive plugs in the interconnect structure 108 can effectively block the travel of the cracks.
此外，圖1的互連結構108設計為H型，X方向的主體部108a中，以金屬層及導電插塞取代習知的大塊氧化物，因此可有效阻擋沿Y方向行進的裂縫。類似地，Y方向的延伸部108b、108c中，以金屬層及導電插塞取代習知的大塊氧化物，因此可有效阻擋沿X方向行進的裂縫。 In addition, the interconnect structure 108 of FIG. 1 is designed to be H-shaped, and the metal layer and the conductive plug are substituted for the conventional bulk oxide in the main body portion 108a in the X direction, so that the crack traveling in the Y direction can be effectively blocked. Similarly, in the extension portions 108b and 108c in the Y direction, the conventional bulk oxide is replaced with a metal layer and a conductive plug, so that the crack traveling in the X direction can be effectively blocked.
當然，本發明的互連結構可以有各種變化，只要符合本發明的精神即可。意即，製作一種具有X方向分量及Y方向分量 的互連結構，且互連結構的組成以金屬層及導電插塞為主，而非習知的大塊氧化物，如此可有效阻擋沿X方向以及Y方向行進的裂縫。 Of course, the interconnection structure of the present invention can be variously modified as long as it conforms to the spirit of the present invention. That is, making an X-direction component and a Y-direction component The interconnect structure, and the composition of the interconnect structure is mainly composed of a metal layer and a conductive plug, rather than a conventional bulk oxide, so that cracks traveling in the X direction and the Y direction can be effectively blocked.
以下列舉數個示例性實施例，但並不用以限定本發明。 例如，為了減少互連結構所占用的面積，也可以設計為僅有一個延伸部(如圖2所示)或將延伸部完全移除(如圖3、圖4所示)。 Several exemplary embodiments are listed below, but are not intended to limit the invention. For example, in order to reduce the area occupied by the interconnect structure, it is also possible to design only one extension (as shown in FIG. 2) or completely remove the extension (as shown in FIGS. 3 and 4).
在圖2的實施例中，互連結構208設計為T型，且可包括穿過開口105的主體部208a以及位於開口105之一側的延伸部208b。延伸部208b與主體部208a的一端連接。延伸部208b可位於切割道102上。此外，開口105並未與互連結構208接觸。互連結構208的組成與互連結構108的組成類似，均是由多個金屬層與多個導電插塞交替堆疊而成。特別要注意的是，如圖2的互連結構208所示，X方向的主體部208a中，以金屬層及導電插塞取代習知的大塊氧化物，因此可有效阻擋沿Y方向行進的裂縫。 類似地，Y方向的延伸部208b中，以金屬層及導電插塞取代習知的大塊氧化物，因此可有效阻擋沿X方向行進的裂縫。 In the embodiment of FIG. 2, the interconnect structure 208 is designed in a T-shape and may include a body portion 208a that passes through the opening 105 and an extension 208b that is located on one side of the opening 105. The extension portion 208b is connected to one end of the main body portion 208a. The extension 208b can be located on the cutting track 102. Moreover, the opening 105 is not in contact with the interconnect structure 208. The composition of the interconnect structure 208 is similar to the composition of the interconnect structure 108, and is formed by alternately stacking a plurality of metal layers and a plurality of conductive plugs. It should be noted that, as shown in the interconnect structure 208 of FIG. 2, the metal layer and the conductive plug replace the conventional bulk oxide in the main body portion 208a in the X direction, thereby effectively blocking the travel in the Y direction. crack. Similarly, in the extension portion 208b in the Y direction, the conventional bulk oxide is replaced with a metal layer and a conductive plug, so that the crack traveling in the X direction can be effectively blocked.
在圖3的實施例中，互連結構308設計為直線狀，且此直線狀的互連結構308傾斜地穿過開口105。更具體言之，互連結構308至開口105之側壁的距離遞增或遞減。如圖3所示，由晶片100至切割道102的方向來看，互連結構308至開口105之一側壁的距離遞增，而至開口105之相對側壁的距離遞減。此外，開口105並未與互連結構308接觸。互連結構308的組成與互連 結構108的組成類似，均是由多個金屬層與多個導電插塞交替堆疊而成。特別要注意的是，如圖3所示，互連結構308設計為傾斜地穿過開口105，因此無論是X方向及Y方向的裂縫均能被有效的被互連結構308中的金屬層及導電插塞所阻擋。換言之，互連結構308不需要延伸部即可有效阻擋沿X方向以及Y方向行進的裂縫。 In the embodiment of FIG. 3, the interconnect structure 308 is designed to be linear, and this linear interconnect structure 308 extends obliquely through the opening 105. More specifically, the distance of the interconnect structure 308 to the sidewalls of the opening 105 is increased or decreased. As seen in FIG. 3, the distance from the interconnect structure 308 to one of the sidewalls of the opening 105 is increased from the direction of the wafer 100 to the scribe line 102, while the distance to the opposite sidewalls of the opening 105 is decreasing. Furthermore, the opening 105 is not in contact with the interconnect structure 308. Composition and interconnection of interconnect structure 308 The structure 108 is similar in composition, and is formed by alternately stacking a plurality of metal layers and a plurality of conductive plugs. It is particularly noted that, as shown in FIG. 3, the interconnect structure 308 is designed to pass obliquely through the opening 105 so that both the X and Y directions of the crack can be effectively metallized and electrically conductive in the interconnect structure 308. Blocked by the plug. In other words, the interconnect structure 308 can effectively block cracks traveling in the X and Y directions without the need for extensions.
在圖4的實施例中，互連結構408設計為階梯狀。此外，開口105並未與互連結構408接觸。互連結構408的組成與互連結構108的組成類似，均是由多個金屬層與多個導電插塞交替堆疊而成。特別要注意的是，如圖4所示，互連結構408設計為階梯狀，因此無論是X方向及Y方向的裂縫均能被有效的被互連結構308中的金屬層及導電插塞所阻擋。 In the embodiment of FIG. 4, interconnect structure 408 is designed to be stepped. Furthermore, the opening 105 is not in contact with the interconnect structure 408. The composition of the interconnect structure 408 is similar to the composition of the interconnect structure 108, and is formed by alternately stacking a plurality of metal layers and a plurality of conductive plugs. It is to be noted that, as shown in FIG. 4, the interconnect structure 408 is designed to be stepped, so that both the X-direction and the Y-direction cracks can be effectively used by the metal layer and the conductive plug in the interconnect structure 308. Block.
綜上所述，本發明的互連結構中，於X方向及Y方向上均以金屬層及導電插塞取代習知的大塊氧化物，因此可有效阻擋沿X方向以及Y方向行進的裂縫。此外，至少部分互連結構108的兩側配置有部***縫中止環，也可以進一步地阻擋裂縫的行進。因此，晶片切割的過程中，所產生的龜裂或裂縫均可被有效地阻止，不會發生裂縫破壞晶片之內部元件的問題。如此一來，可大幅提高晶片的效能，增加競爭力。 In summary, in the interconnect structure of the present invention, the conventional bulk oxide is replaced by a metal layer and a conductive plug in the X direction and the Y direction, thereby effectively blocking cracks traveling in the X direction and the Y direction. . In addition, at least a portion of the interconnect structure 108 is provided with a partial crack stop ring on both sides thereof, which may further block the travel of the crack. Therefore, cracks or cracks generated during wafer cutting can be effectively prevented without causing cracks to damage the internal components of the wafer. As a result, the performance of the wafer can be greatly improved and the competitiveness can be increased.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍 當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of protection of the present invention It is subject to the definition of the scope of the patent application attached.
10‧‧‧半導體元件 10‧‧‧Semiconductor components
100‧‧‧晶片 100‧‧‧ wafer
102‧‧‧切割道 102‧‧‧Cut Road
104‧‧‧保護環 104‧‧‧Protection ring
105‧‧‧開口 105‧‧‧ openings
106‧‧‧裂縫中止環 106‧‧‧ crack stop ring
108‧‧‧互連結構 108‧‧‧Interconnect structure
108a‧‧‧主體部 108a‧‧‧ Main body
108b、108c‧‧‧延伸部 108b, 108c‧‧‧ Extension
110‧‧‧內部元件 110‧‧‧Internal components
112‧‧‧外部元件 112‧‧‧External components
TM1、TM2‧‧‧金屬層 TM1, TM2‧‧‧ metal layer
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