TW201533499A - Method of fabricating and operating an optical modulator - Google Patents
Method of fabricating and operating an optical modulator Download PDFInfo
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本申請案係2013年3月14日提出申請之第13/831,334號美國專利申請案之一部分接續案。 This application is part of a continuation of U.S. Patent Application Serial No. 13/831,334, filed on March 14, 2013.
本發明係關於一種使用一在外部調變之固態雷射的用於類比或數位射頻(RF)信號之光學傳輸系統，且特定而言係關於一種耦合至此雷射之光學調變器。 The present invention relates to an optical transmission system for analog or digital radio frequency (RF) signals using an externally modulated solid state laser, and in particular to an optical modulator coupled to the laser.
一光學電信系統藉助一光學載波將資訊自一個地方傳輸至另一地方，該光學載波之頻率通常在電磁頻譜之可見區域或近紅外區域中。具有此一高頻率之一載波有時稱為一光學信號、一光學載波、光束或一光波信號。光學電信系統包含數個光纖，且每一光纖包含多個頻道。一頻道係一電磁信號之一所規定頻帶，且有時稱為一波長。在同一光纖中使用多個頻道(稱作密集分波長多工(DWDM))之目的係利用由光纖提供之高容量(即，帶寬)。基本上，每一頻道具有其自身波長，且所有波長足夠分離以防止重疊。國際電信聯盟(ITU)標準當前判定頻道分離。 An optical telecommunication system transmits information from one location to another via an optical carrier, the frequency of which is typically in the visible or near infrared region of the electromagnetic spectrum. A carrier having such a high frequency is sometimes referred to as an optical signal, an optical carrier, a light beam, or a light wave signal. An optical telecommunication system includes a plurality of optical fibers, and each optical fiber includes a plurality of channels. A channel is a frequency band defined by one of the electromagnetic signals and is sometimes referred to as a wavelength. The use of multiple channels (referred to as dense wavelength division multiplexing (DWDM)) in the same fiber utilizes the high capacity (ie, bandwidth) provided by the fiber. Basically, each channel has its own wavelength and all wavelengths are sufficiently separated to prevent overlap. The International Telecommunications Union (ITU) standard currently determines channel separation.
一光學電信系統之一個鏈路通常具有一傳輸器、光纖及一接收器。光學傳輸器具有將一電信號轉換成光學信號並將其發射至光纖中 之一雷射。光纖將光學信號運送至接收器。接收器將光學信號轉換回成一電信號。 A link of an optical telecommunication system typically has a transmitter, an optical fiber, and a receiver. An optical transmitter has an electrical signal converted into an optical signal and transmitted to an optical fiber One of the lasers. The fiber carries the optical signal to the receiver. The receiver converts the optical signal back into an electrical signal.
用於經由一光纖傳輸類比或數位射頻(RF)信號之光學傳輸器可使用一直接調變之雷射或耦合至一外部調變器之一連續波(CW)雷射。 An optical transmitter for transmitting analog or digital radio frequency (RF) signals over an optical fiber can use a direct modulated laser or a continuous wave (CW) laser coupled to an external modulator.
藉助一電信號直接調變一發光二極體(LED)或半導體雷射之類比強度被視為在用於經由光纖傳輸類比信號(諸如語音及視訊信號)之現有技術中已知之最簡單方法當中。雖然此類類比傳輸技術具有比數位傳輸(諸如數位脈衝編碼調變)或者類比或脈衝頻率調變實質上小之帶寬要求之優點，但振幅調變之使用通常對傳輸器之雜訊及失真特性具有更嚴格要求。此類鏈路中之一限制因素可係由於光學頻率調變或啁啾與光纖色散之組合導致之二階失真。 The ability to directly modulate the intensity of a light-emitting diode (LED) or semiconductor laser by means of an electrical signal is considered to be among the simplest methods known in the prior art for transmitting analog signals, such as voice and video signals, via optical fibers. . While such analog transmission techniques have advantages over digital transmissions (such as digital pulse modulation modulation) or bandwidth requirements that are substantially smaller than analog or pulse frequency modulation, the use of amplitude modulation typically affects the noise and distortion characteristics of the transmitter. Have more stringent requirements. One of the limiting factors in such a link may be second order distortion due to optical frequency modulation or a combination of chirp and fiber dispersion.
出於此等原因，直接調變技術通常已連同1310nm雷射一起使用，其中應用採用具有低色散之光纖鏈路之短傳輸鏈路。亦可能使用1550nm雷射之直接調變，但在此情形中，必須使用針對特定光纖長度設定之一預失真器消除由啁啾及色散產生之失真。在某種情形中，諸如當必須將信號發送至一個以上位置或穿過不同長度之冗餘光纖鏈路時，此一可程式化預失真器可係不合意的。 For these reasons, direct modulation techniques have typically been used in conjunction with 1310 nm lasers, where the application employs short transmission links with low dispersion fiber links. It is also possible to use direct modulation of a 1550 nm laser, but in this case, one of the predistorters for a particular fiber length setting must be used to eliminate distortion due to chirp and dispersion. In some cases, such as when a signal must be transmitted to more than one location or through a redundant fiber link of varying length, such a programmable predistorter may be undesirable.
為了藉助直接調變避免與在1550nm下之啁啾及色散相關之失真問題，通常在類比光纖通信系統(諸如CATV信號分佈)中使用低啁啾外部光學調變器來對具有一資訊或含內容之信號(諸如音訊、視訊或資料信號)之一光學載波進行振幅調變。 In order to avoid distortion problems associated with enthalpy and dispersion at 1550 nm by means of direct modulation, low-level external optical modulators are typically used in analog optical fiber communication systems (such as CATV signal distribution) to have a message or content. The optical carrier of one of the signals (such as audio, video or data signals) is amplitude modulated.
存在先前技術中已知之實施為半導體裝置之兩種一般類型之外部光學調變器：馬赫-曾德爾(Mach Zehnder)調變器及電吸收調變器。一馬赫-曾德爾調變器在半導體裝置上將光束分成兩個臂或路徑，其中之一個臂併入有一相位調變器。該等光束然後重新組合，此導致兩個波前之干涉，藉此對隨施加至經相位調變臂之經調變偏壓信號而變 之所得光束進行振幅調變。一電吸收調變器實施為一半導體裝置中之一波導，在該半導體裝置中，波導中之吸收頻譜藉由一所施加電偏壓場經調變，該所施加電偏壓場改變半導體之彼區域中之帶隙能量，藉此調變橫穿波導之光束之振幅或強度。 There are two general types of external optical modulators known in the prior art that are implemented as semiconductor devices: Mach Zehnder modulators and electroabsorption modulators. A Mach-Zehnder modulator splits the beam into two arms or paths on a semiconductor device, one of which incorporates a phase modulator. The beams are then recombined, which results in interference of the two wavefronts, thereby varying with the modulated bias signal applied to the phase modulated arm The resulting beam is amplitude modulated. An electroabsorption modulator is implemented as a waveguide in a semiconductor device in which the absorption spectrum in the waveguide is modulated by an applied electrical bias field that changes the semiconductor The band gap energy in the region, thereby modulating the amplitude or intensity of the beam across the waveguide.
本發明之一目標係提供一種使用一在外部調變之雷射的經改良光學傳輸系統。 One object of the present invention is to provide an improved optical transmission system that uses an externally modulated laser.
本發明之另一目標係提供一種供在使用一經調變半導體可飽和吸收器之具有高功率及良好線性的一在外部調變之1550nm光學傳輸系統中使用之電光學調變器。 Another object of the present invention is to provide an electro-optical modulator for use in an externally modulated 1550 nm optical transmission system having a high power and good linearity using a modulated semiconductor saturable absorber.
本發明之又一目標係提供一種使用具有一預定偏壓之一在外部調變之雷射及具有一較低電偏壓之一光學調變器之適合於長距離色散光纖媒體的高線性光學傳輸系統。 Yet another object of the present invention is to provide a high linearity optical suitable for long-distance dispersion optical fiber media using an externally modulated laser having one of a predetermined bias and an optical modulator having a lower electrical bias. Transmission system.
本發明之又一目標係提供一種具有適合於在使用長距離色散光纖媒體之一類比光學傳輸系統中使用之在一正電壓、負電流特性區域中操作之一波導區域的一光學調變器。 Yet another object of the present invention is to provide an optical modulator having a waveguide region adapted to operate in a positive voltage, negative current characteristic region for use in an analog optical transmission system using long-range dispersion fiber media.
本發明之一目標亦係提供一種用於加偏壓於一寬帶類比光學傳輸系統中之一電光學調變器中之一半導體波導區域使得載波經激發成一導電帶且藉由一電場自半導體經提取的方法。 It is also an object of the present invention to provide a semiconductor waveguide region for biasing a thermo-optical modulator in a broadband analog optical transmission system such that the carrier is excited into a conductive strip and is self-conducted by an electric field. The method of extraction.
本發明之一目標亦係提供一種用於藉由以下方式製造一光學調變器之方法：評估半導體材料之增益峰值波長；且用量子井區域之一材料組合物製造該調變器，使得該調變器具有低於該半導體材料之該增益峰值波長之操作波長之一操作波長。 It is also an object of the present invention to provide a method for fabricating an optical modulator by evaluating a gain peak wavelength of a semiconductor material; and fabricating the modulator with a material composition of one of the quantum well regions such that The modulator has an operating wavelength that is lower than an operating wavelength of the gain peak wavelength of the semiconductor material.
本發明之一目標亦係提供一種用於藉由以下方式製造一光學調變器之方法：判定量子井區域之材料組合物，使得該調變器在比預定 波長大一預定量之一增益峰值波長下係透明的。 It is also an object of the present invention to provide a method for fabricating an optical modulator by determining a material composition of a quantum well region such that the modulator is at a predetermined ratio One of the predetermined wavelengths of the wavelength is transparent at the peak wavelength of the gain.
本發明之一目標亦係提供一種用於藉由在製造雷射之光柵之前使用一電致發光量測來判定量子井區域之材料組合物而製造一光學調變器的方法。 It is also an object of the present invention to provide a method for fabricating an optical modulator by determining a material composition of a quantum well region using an electroluminescence measurement prior to fabricating a laser grating.
本發明之一目標亦係提供一種用於製造一整合式雷射與光學調變器之方法，該光學調變器由該雷射之光柵製造，使得與結構之調變器部分相關聯之增益峰值波長比來自該雷射之光束之波長小至少10nm。 It is also an object of the present invention to provide a method for fabricating an integrated laser and optical modulator that is fabricated from the laser grating such that the gain associated with the modulator portion of the structure is achieved. The peak wavelength is at least 10 nm less than the wavelength of the beam from the laser.
某些實施方案或實施例可實現少於所有前述目標。 Certain embodiments or embodiments may achieve less than all of the foregoing objectives.
簡言之且概括地，本發明提供一種操作包含一半導體裝置之一光學調變器之方法，該半導體裝置具有：一光學輸入，其用於接收具有一預定功率之一連續波同調光束；一波導，其用於傳送該光束；一電極，其連接至一射頻信號輸入及一偏壓電位以在該波導中形成一電場且在該光束橫穿該波導時對該光束進行光學調變；及一光學輸出，其連接至該波導以傳送經調變光學信號，該方法包含：將一連續波(cW)同調光束施加至該光學輸入；及將一偏壓電壓施加至該電極，使得藉由信號對該同調光束進行光學調變，該信號調變該半導體裝置中之吸收特性，使得該波導以小於增益峰值波長之波長在吸收區域中操作。 Briefly and broadly, the present invention provides a method of operating an optical modulator comprising a semiconductor device, the semiconductor device having: an optical input for receiving a continuous wave coherent beam having a predetermined power; a waveguide for transmitting the beam; an electrode coupled to an RF signal input and a bias potential to form an electric field in the waveguide and optically modulating the beam as the beam traverses the waveguide; And an optical output coupled to the waveguide for transmitting the modulated optical signal, the method comprising: applying a continuous wave (cW) coherent beam to the optical input; and applying a bias voltage to the electrode such that The coherent beam is optically modulated by a signal that modulates the absorption characteristics of the semiconductor device such that the waveguide operates in the absorption region at a wavelength less than the peak wavelength of the gain.
在某些實施例中，該調變器自光伏打效應產生電流，該電流係自該調變器抽取或提取的。 In some embodiments, the modulator generates a current from a photovoltaic effect that is extracted or extracted from the modulator.
在某些實施例中，調變在該光束之方向上沿著該半導體調變器之長度之載波密度，藉此對進入該調變器之該連續波光束進行光學調變。 In some embodiments, the carrier density along the length of the semiconductor modulator in the direction of the beam is modulated, thereby optically modulating the continuous wave beam entering the modulator.
在某些實施例中，該光學信號之隨波長而變之該增益峰值波長 比該連續波光束之波長大至少10nm。 In some embodiments, the optical signal varies with wavelength to the peak wavelength of the gain. It is at least 10 nm larger than the wavelength of the continuous wave beam.
在某些實施例中，在I-V特性之負電流區域中操作該半導體裝置。 In some embodiments, the semiconductor device is operated in a negative current region of the I-V characteristic.
在某些實施例中，與該調變器相關聯之該增益峰值波長比施加至該調變器之光之波長大介於20nm與40nm之間。 In some embodiments, the gain peak wavelength associated with the modulator is between 20 nm and 40 nm greater than the wavelength of light applied to the modulator.
在某些實施例中，在該同調光束施加至該光學輸入之情況下該偏壓在0.6伏至1.0伏之範圍內。 In some embodiments, the bias voltage is in the range of 0.6 volts to 1.0 volts with the coherent beam applied to the optical input.
在某些實施例中，在該同調光束施加至該光學輸入之情況下該偏壓在0.7伏至0.9伏之範圍內。 In some embodiments, the bias voltage is in the range of 0.7 volts to 0.9 volts with the coherent beam applied to the optical input.
在某些實施例中，在該同調光束施加至該光學輸入之情況下不具有淨電流提取注入之調變器接面電壓在0.7伏至0.9伏之範圍內。 In some embodiments, the modulator junction voltage without the net current extraction injection is in the range of 0.7 volts to 0.9 volts with the coherent beam applied to the optical input.
在某些實施例中，在該同調光束施加至該光學輸入之情況下不具有淨電流提取注入之該調變器接面電壓係0.8伏。 In some embodiments, the modulator junction voltage that does not have a net current extraction injection is 0.8 volts when the coherent beam is applied to the optical input.
在另一態樣中，本發明提供一種製造包含一半導體裝置之一光學調變器之方法，該半導體裝置具有：一光學輸入，其用於接收具有一預定功率之一連續波同調光束；一波導層，其用於傳送該光束；一電極，其連接至一射頻信號輸入及一偏壓電位以在該波導中形成一電場且在該光束橫穿該波導時對該光束進行光學調變；及一光學輸出，其連接至該波導以傳送經調變光學信號，該方法包含：判定待施加至該調變器之該連續波同調光束之波長；針對該波導層之各種預定組合物，判定一光學信號之隨波長而變之增益；及用一特定組合物製造該波導層，使得一光學信號之隨波長而變之增益峰值大於待施加至該調變器之該連續波同調光束之預定波長。 In another aspect, the present invention provides a method of fabricating an optical modulator comprising a semiconductor device, the semiconductor device having: an optical input for receiving a continuous wave coherent beam having a predetermined power; a waveguide layer for transmitting the light beam; an electrode coupled to an RF signal input and a bias potential to form an electric field in the waveguide and optically modulating the beam as the beam traverses the waveguide And an optical output coupled to the waveguide to transmit the modulated optical signal, the method comprising: determining a wavelength of the continuous wave coherent beam to be applied to the modulator; for various predetermined compositions of the waveguide layer, Determining the gain of an optical signal as a function of wavelength; and fabricating the waveguide layer with a particular composition such that the gain peak of an optical signal as a function of wavelength is greater than the continuous wave coherent beam to be applied to the modulator The predetermined wavelength.
在某些實施例中，該波導層中之一光學信號之該增益峰值比待施加至該調變器之該連續波同調光束之該波長大介於20nm與40nm之間。 In some embodiments, the gain peak of one of the optical signals in the waveguide layer is between 20 nm and 40 nm greater than the wavelength of the continuous wave coherent beam to be applied to the modulator.
在另一態樣中，本發明提供一種製造包含一半導體裝置之用於光學通信之一雷射傳輸器之方法，該半導體裝置包含：(a)一第一半導體區域，其用於回應於電流注入而產生一同調光輸出；及(b)一第二半導體區域，其毗鄰於該第一半導體區域安置且藉由一通道而與其分離，該第二半導體區域具有光學耦合至其以自該第一半導體區域接收該同調光輸出之一光學輸入及連接至該第二半導體區域以傳送經調變光學信號之一光學輸出，該方法包含：在該第一半導體區域中形成一雷射諧振器以便以一光學輸出波長操作；在該第二半導體區域中形成一半導體波導結構以傳送來自第一半導體區域光束之該同調光輸出；在該半導體波導結構中形成一光學調變器，該光學調變器包含具有一量子井區域之一作用層及一電極，該電極連接至一射頻信號輸入及一偏壓電位以在該波導結構中形成一電場，使得在該光束橫穿該波導時對該同調光輸出進行光學調變；判定該量子井區域之材料組合物，使得該調變器在比該雷射諧振器之輸出波長大一預定量之一增益峰值波長下係透明的；及用該所判定材料組合物製造該調變器。 In another aspect, the present invention provides a method of fabricating a laser transmitter for optical communication comprising a semiconductor device, the semiconductor device comprising: (a) a first semiconductor region for responding to a current Injecting to produce a dimming output; and (b) a second semiconductor region disposed adjacent to the first semiconductor region and separated therefrom by a channel, the second semiconductor region having an optical coupling thereto Receiving, by a semiconductor region, an optical input of the same dimming output and connecting to the second semiconductor region to transmit an optical output of the modulated optical signal, the method comprising: forming a laser resonator in the first semiconductor region such that Operating at an optical output wavelength; forming a semiconductor waveguide structure in the second semiconductor region to transmit the same dimming output from the first semiconductor region beam; forming an optical modulator in the semiconductor waveguide structure, the optical modulation The device includes an active layer having a quantum well region and an electrode connected to an RF signal input and a bias potential at the Forming an electric field in the guiding structure such that the dimming output is optically modulated as the beam traverses the waveguide; determining a material composition of the quantum well region such that the modulator is output at a ratio of the laser resonator The wavelength is greater than a predetermined amount of the gain peak wavelength is transparent; and the modulator is fabricated using the determined material composition.
在某些實施例中，與該調變器相關聯之該增益峰值波長比施加至該調變器之光之輸出波長大介於20nm與40nm之間。 In some embodiments, the gain peak wavelength associated with the modulator is between 20 nm and 40 nm greater than the output wavelength of light applied to the modulator.
在另一態樣中，本發明提供一種對波導結構執行一電致發光量測之方法。 In another aspect, the invention provides a method of performing an electroluminescence measurement on a waveguide structure.
在某些實施例中，在製造雷射諧振器之前做出對該波導結構之該電致發光量測。 In some embodiments, the electroluminescence measurement of the waveguide structure is made prior to fabrication of the laser resonator.
在某些實施例中，由該雷射諧振器中之一光柵判定該雷射諧振器之光學輸出波長且形成該光柵，使得與該雷射諧振器相關聯之增益峰值波長比調變器區域在其下為透明之增益峰值波長小介於20nm與40nm之間。 In some embodiments, the optical output wavelength of the laser resonator is determined by one of the laser resonators and the grating is formed such that a gain peak wavelength ratio modulator region associated with the laser resonator The gain peak wavelength below which is transparent is between 20 nm and 40 nm.
在另一態樣中，本發明提供一種包括一半導體裝置之電光配 置，該半導體裝置包含：(a)一第一半導體區域，其包含可操作以回應於電流注入而產生一同調光輸出之一雷射諧振器；及(b)一第二半導體區域，其毗鄰於該第一半導體區域安置且藉由一通道而與其分離，該第二半導體區域具有與該第一半導體區域相同之組合物且包含光學耦合至該第一半導體區域以自該第一半導體區域接收該同調光輸出之一光學輸入，第二半導體裝置以比第一半導體裝置低之一第二偏壓電位被加電偏壓且電耦合至一含射頻資訊之信號源，使得在該第二半導體裝置中產生電流且自其提取電流，同時藉由信號對同調光束進行光學調變。 In another aspect, the present invention provides an electro-optic device including a semiconductor device The semiconductor device includes: (a) a first semiconductor region including one of the laser resonators operable to generate a dimming output in response to current injection; and (b) a second semiconductor region adjacent to Arranging in the first semiconductor region and separated therefrom by a channel having a composition identical to the first semiconductor region and comprising optically coupled to the first semiconductor region for receiving from the first semiconductor region An optical input of the same dimming output, the second semiconductor device is energized and biased at a second bias potential lower than the first semiconductor device and electrically coupled to a signal source containing radio frequency information such that the second A current is generated in the semiconductor device and current is extracted therefrom, while the coherent beam is optically modulated by the signal.
在某些實施例中，第一偏壓電位係一正偏壓，且在該同調光輸出施加至該光學輸入之情況下該第二偏壓在0.7伏至0.9伏之範圍內。 In some embodiments, the first bias potential is positively biased and the second bias voltage is in the range of 0.7 volts to 0.9 volts with the same dimming output applied to the optical input.
在某些實施例中，該半導體區域包括一InP半導體波導結構。 In some embodiments, the semiconductor region comprises an InP semiconductor waveguide structure.
在某些實施例中，該第一半導體區域包括具有毗鄰於調變器安置之一鏡像第一端區域及一第二端區域之一InP半導體增益結構。 In some embodiments, the first semiconductor region includes an InP semiconductor gain structure having one of a mirrored first end region and a second end region disposed adjacent to the modulator.
在某些實施例中，該半導體裝置包含安置於該InP半導體增益結構上方之一第一電極及安置於該InP半導體波導結構上方之一第二電極。 In some embodiments, the semiconductor device includes a first electrode disposed over the InP semiconductor gain structure and a second electrode disposed over the InP semiconductor waveguide structure.
在某些實施例中，施加至該第二電極之偏壓係零。 In some embodiments, the bias applied to the second electrode is zero.
在某些實施例中，施加至該第二電極之該偏壓係自將會在該調變器由源雷射泵激且自耦合至該調變器之該電極無電流注入或提取之情況下發生之電壓之值加或減0.1伏。 In some embodiments, the bias applied to the second electrode is from a current-free injection or extraction of the electrode that will be pumped by the source laser and self-coupled to the modulator. The value of the voltage that occurs below is plus or minus 0.1 volts.
在另一態樣中，本發明提供一種製造包含一半導體裝置之一光學調變器之方法，該半導體裝置具有：一光學輸入，其用於接收具有一預定功率之一連續波同調光束；一波導，其在該半導體裝置中以傳送該光束；一電極，其安置於該半導體裝置上且連接至一射頻信號輸入及一偏壓電位以在該波導中形成一電場且在該光束橫穿該波導時對 該光束進行光學調變；及一光學輸出，其在該半導體裝置中連接至該波導以傳送經調變光學信號，該方法包括以下步驟：規定待施加至該調變器之該連續波同調光束之波長；針對該波導之各種預定組合物，判定該波導中之一光學信號之隨波長而變之增益；及用一特定組合物製造該波導，使得一光學信號之隨波長而變之增益峰值比待施加至該調變器之該連續波同調光束之該所規定波長大10nm以上。 In another aspect, the present invention provides a method of fabricating an optical modulator comprising a semiconductor device, the semiconductor device having: an optical input for receiving a continuous wave coherent beam having a predetermined power; a waveguide in the semiconductor device for transmitting the light beam; an electrode disposed on the semiconductor device and coupled to an RF signal input and a bias potential to form an electric field in the waveguide and traversing the beam The waveguide pair The beam is optically modulated; and an optical output is coupled to the waveguide in the semiconductor device to transmit the modulated optical signal, the method comprising the steps of: defining the continuous wave coherent beam to be applied to the modulator a wavelength for determining a wavelength-dependent gain of an optical signal in the waveguide for each predetermined composition of the waveguide; and fabricating the waveguide with a particular composition such that a wavelength of the optical signal varies with wavelength The predetermined wavelength of the continuous wave coherent light beam to be applied to the modulator is greater than 10 nm.
在另一態樣中，本發明提供一種製造包含一半導體裝置之一光學調變器之方法，該半導體裝置具有：一光學輸入，其用於接收具有一預定功率之一連續波同調光束；一波導，其在該半導體裝置中以傳送該光束；一電極，其安置於該半導體裝置上且連接至一射頻信號輸入及一偏壓電位以在該波導中形成一電場且在該光束橫穿該波導時對該光束進行光學調變；及一光學輸出，其在該半導體裝置中連接至該波導以傳送經調變光學信號，該方法包括以下步驟：規定待施加至該調變器之該連續波同調光束之波長；在開路電路條件下對該調變器做出一電致發光量測以判定該波導中之一光學信號之隨波長而變之增益；用一特定組合物製造該波導，使得一光學信號之隨波長而變之增益峰值比待施加至該調變器之該連續波同調光束之該所規定波長大10nm以上。 In another aspect, the present invention provides a method of fabricating an optical modulator comprising a semiconductor device, the semiconductor device having: an optical input for receiving a continuous wave coherent beam having a predetermined power; a waveguide in the semiconductor device for transmitting the light beam; an electrode disposed on the semiconductor device and coupled to an RF signal input and a bias potential to form an electric field in the waveguide and traversing the beam Optically modulating the beam when the waveguide is; and an optical output coupled to the waveguide in the semiconductor device to transmit the modulated optical signal, the method comprising the steps of: specifying the to be applied to the modulator a wavelength of a continuous wave coherent beam; an electroluminescence measurement is performed on the modulator under an open circuit condition to determine a wavelength-dependent gain of an optical signal in the waveguide; the waveguide is fabricated using a particular composition The gain peak of an optical signal as a function of wavelength is greater than the specified wavelength of the continuous wave coherent beam to be applied to the modulator by more than 10 nm.
在另一態樣中，本發明提供一種製造包含一半導體裝置之用於光學通信之一雷射傳輸器之方法，該半導體裝置包含：(a)一第一半導體區域，其用於回應於電流注入而產生一同調光輸出；及(b)一第二半導體區域，其毗鄰於該第一半導體區域安置且藉由一通道而與其分離，該第二半導體區域具有光學耦合至其以自該第一半導體區域接收該同調光輸出之一光學輸入及連接至該第二半導體區域以傳送經調變光學信號之一光學輸出，該方法包括：提供該傳輸器經設計以在其下操作之一預定波長值；在該第一半導體區域中形成一雷射諧振器； 在該第二半導體區域中形成一半導體波導結構以傳送來自第一半導體區域光束之該同調光輸出；在該半導體波導結構中形成一光學調變器，該光學調變器包含具有一量子井區域之一作用層及一電極，該電極連接至一射頻信號輸入及一偏壓電位以在該波導結構中形成一電場，使得在該光束橫穿該波導時對該同調光輸出進行光學調變；及在開路電路條件下對該調變器做出一電致發光量測以判定該波導中之一光學信號之隨波長而變之增益；判定該量子井區域之材料組合物，使得該調變器在比預定波長大一預定量之一增益峰值波長下對該同調光輸出係光學透明的；及用該所判定材料組合物製造該調變器。 In another aspect, the present invention provides a method of fabricating a laser transmitter for optical communication comprising a semiconductor device, the semiconductor device comprising: (a) a first semiconductor region for responding to a current Injecting to produce a dimming output; and (b) a second semiconductor region disposed adjacent to the first semiconductor region and separated therefrom by a channel, the second semiconductor region having an optical coupling thereto Receiving, by a semiconductor region, an optical input of the same dimming output and connecting to the second semiconductor region to transmit an optical output of the modulated optical signal, the method comprising: providing the transmitter to be designed to operate underneath one of the predetermined a wavelength value; forming a laser resonator in the first semiconductor region; Forming a semiconductor waveguide structure in the second semiconductor region to transmit the same dimming output from the first semiconductor region beam; forming an optical modulator in the semiconductor waveguide structure, the optical modulator comprising a quantum well region An active layer and an electrode coupled to an RF signal input and a bias potential to form an electric field in the waveguide structure such that the dimming output is optically modulated as the beam traverses the waveguide And determining an electroluminescence measurement of the modulator under an open circuit condition to determine a gain of the optical signal in the waveguide as a function of wavelength; determining a material composition of the quantum well region such that the modulation The transducer is optically transparent to the dimming output at a gain peak wavelength that is greater than a predetermined wavelength by a predetermined amount; and the modulator is fabricated from the determined material composition.
在某些實施例中，該預定量之波長差大於10nm但小於50nm。 In certain embodiments, the predetermined amount of wavelength difference is greater than 10 nm but less than 50 nm.
在另一態樣中，本發明提供一種包括一半導體裝置之一電光配置，該半導體裝置包含：(a)一第一半導體區域，其包含可操作以在一所規定波長下回應於電流注入而產生一連續波同調光輸出之一雷射諧振器；及(b)一第二半導體區域，其毗鄰於該第一半導體區域安置且藉由一通道而與其分離，該第二半導體區域具有與該第一半導體區域相同之組合物且包含光學耦合至該第一半導體區域以自該第一半導體區域接收該同調光輸出之一光學輸入，第二半導體裝置以比第一半導體裝置低之一第二偏壓電位被加電偏壓且電耦合至一含射頻資訊之信號源，使得在該第二半導體裝置中產生電流且自其提取電流，同時藉由信號對在該第二半導體區域中傳輸之同調光束進行光學調變，使得光學信號之隨波長而變之增益峰值比施加至該調變器之該連續波同調光束之所規定波長大10nm以上。 In another aspect, the invention provides an electro-optical arrangement comprising a semiconductor device, the semiconductor device comprising: (a) a first semiconductor region operative to respond to current injection at a specified wavelength Generating a laser resonator of a continuous wave and a dimming output; and (b) a second semiconductor region disposed adjacent to the first semiconductor region and separated therefrom by a channel, the second semiconductor region having a first semiconductor region of the same composition and comprising optically coupled to the first semiconductor region to receive an optical input of the same dimming output from the first semiconductor region, the second semiconductor device being one lower than the first semiconductor device The bias potential is energized and electrically coupled to a signal source containing radio frequency information such that a current is generated in the second semiconductor device and current is extracted therefrom while being transmitted in the second semiconductor region by the signal pair The coherent beam is optically modulated such that the gain peak of the optical signal varies with wavelength than the specified wave of the continuous wave coherent beam applied to the modulator A large 10nm or more.
在另一態樣中，本發明提供一種光學調變器，其包括：一含資訊之射頻信號輸入；一半導體裝置，其具有光學用於接收同調光束之一光學輸入及連接至該射頻信號輸入且具有一經調變偏壓電位之一電極，使得在該半導體裝置中產生電流且自其提取電流，用一特定組合 物製造波導，使得同時藉由信號對該同調光束進行光學調變，使得光學信號之隨波長而變之增益峰值比施加至該調變器之該連續波同調光束之所規定波長大10nm以上。 In another aspect, the present invention provides an optical modulator comprising: an RF signal input containing information; a semiconductor device having optics for receiving an optical input of a coherent beam and connecting to the RF signal input And having one of the modulated bias potential electrodes, such that a current is generated in the semiconductor device and current is extracted therefrom, using a specific combination The waveguide is fabricated such that the coherent beam is optically modulated by a signal such that the gain peak of the optical signal as a function of wavelength is greater than the specified wavelength of the continuous wave coherent beam applied to the modulator by more than 10 nm.
在另一態樣中，本發明提供一種製造一光學調變器之方法，該光學調變器包括：一含資訊之射頻信號輸入；一半導體裝置，其具有光學用於接收同調光束之一光學輸入及連接至該射頻信號輸入且具有一經調變偏壓電位之一電極，使得在該半導體裝置中產生電流且自其提取電流，同時藉由信號對該同調光束進行光學調變，使得光學信號之隨波長而變之增益峰值比施加至該調變器之該連續波同調光束之所規定波長大10nm以上。 In another aspect, the present invention provides a method of fabricating an optical modulator comprising: an RF signal input containing information; a semiconductor device having optical for receiving one of the coherent beams Inputting and connecting to the RF signal input and having an electrode of a modulated bias potential, such that a current is generated in the semiconductor device and a current is extracted therefrom, and the coherent beam is optically modulated by the signal, such that the optical The gain peak of the signal as a function of wavelength is greater than the specified wavelength of the continuous wave coherent beam applied to the modulator by more than 10 nm.
在另一態樣中，本發明提供一種包括一半導體裝置之一電光配置，該半導體裝置包含：一第一半導體區域，其包含可操作以回應於電流注入而產生一同調光輸出之一雷射諧振器；及一第二半導體區域，其毗鄰於該第一半導體區域安置且藉由一通道而與其分離，該第二半導體區域具有光學耦合至其以自該第一半導體區域接收該同調光輸出之一光學輸入，第二半導體裝置以比第一半導體裝置低之一第二偏壓電位被加電偏壓且電耦合至一含射頻資訊之信號源，使得在該第二半導體裝置中產生電流且自其提取電流，同時對同調光束進行光學調變，使得光學信號之隨波長而變之增益峰值比施加至該調變器之該連續波同調光束之所規定波長大10nm以上。 In another aspect, the present invention provides an electro-optic arrangement comprising a semiconductor device, the semiconductor device comprising: a first semiconductor region comprising a laser operable to generate a dimming output in response to current injection a resonator; and a second semiconductor region disposed adjacent to the first semiconductor region and separated therefrom by a channel, the second semiconductor region having optical coupling thereto to receive the same dimming output from the first semiconductor region One optical input, the second semiconductor device is energized and biased at a second bias potential lower than the first semiconductor device and electrically coupled to a signal source containing radio frequency information such that it is generated in the second semiconductor device The current is drawn from the current and the homology beam is optically modulated such that the gain peak of the optical signal as a function of wavelength is greater than the specified wavelength of the continuous wave coherent beam applied to the modulator by more than 10 nm.
在另一態樣中，本發明提供一種用於光學通信之雷射傳輸器，其包括：一第一半導體裝置，其包含可操作以在一第一偏壓電位下回應於電流注入而產生一同調光輸出之一雷射諧振器；一第二半導體裝置，其毗鄰於該第一半導體裝置安置且具有光學耦合至其以接收該同調光輸出之一光學輸入，該第二半導體裝置以比該第一半導體裝置低之一第二偏壓電位被加電偏壓且電耦合至一含射頻資訊之信號源，使 得在該第二半導體裝置中產生電流且自其提取電流，同時對同調光束進行光學調變，使得光學信號之隨波長而變之增益峰值比施加至調變器之該連續波同調光束之所規定波長大10nm以上。 In another aspect, the present invention provides a laser transmitter for optical communication, comprising: a first semiconductor device operative to generate a response to current injection at a first bias potential a laser resonator having a dimming output; a second semiconductor device disposed adjacent to the first semiconductor device and having an optical input optically coupled thereto for receiving the same dimming output, the second semiconductor device being One of the second lower bias potentials of the first semiconductor device is electrically biased and electrically coupled to a signal source containing radio frequency information, such that A current is generated in the second semiconductor device and current is extracted therefrom, and the coherent beam is optically modulated such that the gain peak of the optical signal varies with wavelength than the continuous wave coherent beam applied to the modulator The predetermined wavelength is 10 nm or more.
在另一態樣中，本發明提供一種製造用於光學通信之一雷射傳輸器之方法，該雷射傳輸器包括：一第一半導體裝置，其包含可操作以在一第一偏壓電位下回應於電流注入而產生一同調光輸出之一雷射諧振器；一第二半導體裝置，其毗鄰於該第一半導體裝置安置且具有光學耦合至其以接收該同調光輸出之一光學輸入，該第二半導體裝置以比該第一半導體裝置低之一第二偏壓電位被加電偏壓且電耦合至一含射頻資訊之信號源，使得在該第二半導體裝置中產生電流，同時對同調光束進行光學調變，使得光學信號之隨波長而變之增益峰值比施加至調變器之該連續波同調光束之所規定波長大10nm以上。 In another aspect, the present invention provides a method of fabricating a laser transmitter for optical communication, the laser transmitter comprising: a first semiconductor device operative to operate at a first bias voltage Positioning a laser resonator in response to current injection to produce a dimming output; a second semiconductor device disposed adjacent to the first semiconductor device and having an optical input optically coupled thereto for receiving the same dimming output The second semiconductor device is electrically biased and electrically coupled to a signal source containing radio frequency information at a second bias potential lower than the first semiconductor device, such that a current is generated in the second semiconductor device. At the same time, the coherent beam is optically modulated such that the gain peak of the optical signal as a function of wavelength is greater than the specified wavelength of the continuous wave coherent beam applied to the modulator by more than 10 nm.
在另一態樣中，本發明提供一種操作包含一半導體裝置之一光學調變器之方法，該半導體裝置具有：一光學輸入，其用於接收具有一預定功率之一連續波同調光束；一波導層，其用於傳送該光束；一電極，其連接至一射頻信號輸入及一偏壓電位以在該波導中形成一電場且在該光束橫穿該波導時對該光束進行光學調變；及一光學輸出，其連接至該波導以傳送經調變光學信號，該方法包括：將一連續波同調光束施加至該光學輸入；及將一偏壓電壓施加至該電極，使得對該同調光束進行光學調變且該光學信號之隨波長而變之增益峰值比施加至該調變器之該連續波同調光束之所規定波長大30nm以上。 In another aspect, the present invention provides a method of operating an optical modulator comprising a semiconductor device, the semiconductor device having: an optical input for receiving a continuous wave coherent beam having a predetermined power; a waveguide layer for transmitting the light beam; an electrode coupled to an RF signal input and a bias potential to form an electric field in the waveguide and optically modulating the beam as the beam traverses the waveguide And an optical output coupled to the waveguide for transmitting the modulated optical signal, the method comprising: applying a continuous wave coherent beam to the optical input; and applying a bias voltage to the electrode such that the coherence The beam is optically modulated and the gain peak of the optical signal as a function of wavelength is greater than the specified wavelength of the continuous wave coherent beam applied to the modulator by more than 30 nm.
在另一態樣中，本發明提供一種藉由以下方式製作一光學調變器之方法：判定該調變器之波導部分中之量子井區域之材料組合物，使得該調變器在比預定波長大一預定量之一增益峰值波長下係透明的；及用該所判定材料組合物製造該調變器。 In another aspect, the present invention provides a method of fabricating an optical modulator by determining a material composition of a quantum well region in a waveguide portion of the modulator such that the modulator is at a predetermined ratio The wavelength is greater than a predetermined amount of the gain peak wavelength is transparent; and the modulator is fabricated using the determined material composition.
在某些實施例中，該調變器之操作波長介於自1540nm至1550 nm之間。 In some embodiments, the modulator operates at wavelengths from 1540 nm to 1550 Between nm.
在某些實施例中，一光學信號之隨波長而變之增益峰值比待施加至該調變器之連續波同調光束之所規定波長大20nm以上。 In some embodiments, the gain peak of an optical signal as a function of wavelength is greater than the specified wavelength of the continuous wave coherent beam to be applied to the modulator by more than 20 nm.
在某些實施例中，一光學信號之隨波長而變之該增益峰值比待施加至該調變器之該連續波同調光束之該所規定波長大30nm以上。 In some embodiments, the gain peak of an optical signal varies with wavelength by more than 30 nm greater than the specified wavelength of the continuous wave coherent beam to be applied to the modulator.
在某些實施例中，該調變器之該操作波長比該增益峰值波長低至少30nm。 In some embodiments, the operating wavelength of the modulator is at least 30 nm lower than the gain peak wavelength.
在某些實施例中，該調變器之該操作波長比該增益峰值波長低30nm至40nm。 In some embodiments, the operating wavelength of the modulator is 30 nm to 40 nm lower than the gain peak wavelength.
在某些實施例中，該調變器之該操作波長比該增益峰值波長低40nm。 In some embodiments, the operating wavelength of the modulator is 40 nm below the gain peak wavelength.
在某些實施例中，雷射與該調變器整合於一單個半導體基板上。 In some embodiments, the laser is integrated with the modulator on a single semiconductor substrate.
在另一態樣中，施加至該雷射之偏壓電位小於施加至該調變器之偏壓電位。 In another aspect, the bias potential applied to the laser is less than the bias potential applied to the modulator.
在某些實施例中，施加至該調變器之外部電偏壓電位係加或減0.1伏。 In some embodiments, the external electrical bias potential applied to the modulator is plus or minus 0.1 volts.
在某些實施例中，藉由來自該雷射之光束將該調變器光學泵激至0.8伏之一位準。 In some embodiments, the modulator is optically pumped to a level of 0.8 volts by a beam from the laser.
在另一態樣中，在操作中該調變器自光伏打效應產生電流，該電流係自該調變器抽取的。 In another aspect, the modulator generates a current from the photovoltaic effect in operation, the current being drawn from the modulator.
在另一態樣中，調變在該光束之方向上沿著該半導體調變器之長度之載波密度，藉此對進入該調變器之該連續波光束進行光學調變。 In another aspect, the carrier density along the length of the semiconductor modulator in the direction of the beam is modulated, thereby optically modulating the continuous wave beam entering the modulator.
在另一態樣中，該調變器包括一InP半導體波導結構。 In another aspect, the modulator includes an InP semiconductor waveguide structure.
在另一態樣中，該雷射包括具有毗鄰於該調變器安置之一鏡像 第一端區域及一第二端區域之一InP半導體增益結構。 In another aspect, the laser includes a mirror image having a placement adjacent to the modulator An InP semiconductor gain structure of one of the first end region and the second end region.
在另一態樣中，該雷射包含安置於該InP半導體增益結構上方之一第一電極。 In another aspect, the laser includes a first electrode disposed over the InP semiconductor gain structure.
在另一態樣中，該調變器包含安置於該InP半導體波導結構上方之第二電極。 In another aspect, the modulator includes a second electrode disposed over the InP semiconductor waveguide structure.
在另一態樣中，該雷射與該調變器整合於一單個半導體基板上，且延伸大致一微米進入至該基板中之一垂直間隙將該雷射與該調變器電分離。該雷射與該調變器藉由一共同光學波導光學連接。 In another aspect, the laser and the modulator are integrated on a single semiconductor substrate and extend approximately one micron into a vertical gap in the substrate to electrically separate the laser from the modulator. The laser is optically coupled to the modulator by a common optical waveguide.
熟習此項技術者自本發明(包含以下詳細說明)以及藉由實踐本發明將顯而易見本發明之額外目標、優點及新穎特徵。儘管下文參考較佳實施例來闡述本發明，但應理解，本發明並不限於此。已閱讀本文中之教示之熟習此項技術者將識別額外應用、修改及其他領域中之實施例，該等額外應用、修改及其他領域中之實施例在如本文中所揭示及所主張之本發明之範疇內，且關於其，本發明可具有實用性。 Additional objects, advantages and novel features of the invention are apparent from the <RTIgt; Although the invention is described below with reference to the preferred embodiments, it should be understood that the invention is not limited thereto. Those skilled in the art who have read the teachings herein will recognize additional applications, modifications, and embodiments in other fields, and such additional applications, modifications, and other embodiments in the field are disclosed and claimed herein. Within the scope of the invention, and with regard to it, the invention may have utility.
10‧‧‧傳輸器 10‧‧‧Transmitter
11‧‧‧半導體雷射/雷射 11‧‧‧Semiconductor laser/laser
12‧‧‧光纖 12‧‧‧ fiber
13‧‧‧調變器 13‧‧‧Transformer
14‧‧‧資訊/含內容之資訊 14‧‧‧Information/information
15‧‧‧寬帶射頻信號 15‧‧‧Broadband RF signals
16‧‧‧電偏壓 16‧‧‧Electric bias
17‧‧‧放大器/摻雜鉺之光纖放大器 17‧‧‧Amplifier/Doped Fiber Amplifier
20‧‧‧光纖路徑/光纖鏈路/光纖傳輸鏈路 20‧‧‧Fiber path/fiber link/fiber transmission link
30‧‧‧遠端接收器/接收器 30‧‧‧Remote Receiver/Receiver
31‧‧‧射頻電信號 31‧‧‧RF signal
32‧‧‧終端機/顯示器 32‧‧‧Terminal/Monitor
50‧‧‧光纖 50‧‧‧ fiber
51‧‧‧外部調變器/調變器 51‧‧‧External modulator/modulator
53‧‧‧含資訊之射頻訊號/射頻訊號 53‧‧‧ RF signals/RF signals with information
55‧‧‧輸出光纖 55‧‧‧ Output fiber
100‧‧‧半導體裝置/雷射諧振器 100‧‧‧Semiconductor device / laser resonator
102‧‧‧接地電極 102‧‧‧Ground electrode
103‧‧‧第一半導體區域/區域/InP半導體增益結構區域/InP半導體增益結構/第一半導體裝置/源雷射 103‧‧‧First semiconductor region/region/InP semiconductor gain structure region/InP semiconductor gain structure/first semiconductor device/source laser
104‧‧‧第二半導體區域/InP半導體波導結構 104‧‧‧Second semiconductor region/InP semiconductor waveguide structure
105‧‧‧通道 105‧‧‧ channel
106‧‧‧外部電偏壓電位 106‧‧‧External electric bias potential
107‧‧‧電極/第一電極 107‧‧‧electrode/first electrode
108‧‧‧偏壓電位 108‧‧‧ bias potential
109‧‧‧電極/第二電極 109‧‧‧electrode/second electrode
110‧‧‧射頻輸入信號 110‧‧‧RF input signal
112‧‧‧光學輸出 112‧‧‧ Optical output
藉由在連同所附圖式一起考量時參考以下詳細說明，將更佳地理解並更全面地瞭解本發明之此等及其他特徵以及優點，其中：圖1係先前技術中已知之一在外部調變之光學傳輸系統之一實例；圖2係根據本發明之耦合至一雷射之一外部調變器之一第一實施例；圖3係根據本發明之耦合至一雷射之一外部調變器之一第二實施例；圖4係先前技術中及根據本發明之針對各種輸入功率之一電光學調變器之電流對電壓操作特性之一圖表；圖5係繪示根據本發明之在各種電流操作位準下之調變器輸出功 率對調變器輸入功率之一圖表；圖6係繪示根據先前技術中已知之一馬赫-曾德爾或EA調變器之在各種操作位準下之調變器輸出功率對調變器輸入功率之一圖表；圖7係繪示針對調變器波導之一給定組合物之模態增益對展示增益峰值波長之波長之一圖表；圖8係繪示針對一調變器波導之設計之模態增益對展示增益峰值波長及一潛在操作波長範圍之波長之一圖表；圖9係繪示針對調變器波導之一給定組合物之模態增益對展示增益峰值波長及一選定操作波長之波長之一圖表；圖10係繪示來自在各種調變器電流值下對一樣品測試調變器之一電致發光量測之模態增益對展示增益峰值波長之波長之一圖表；及圖11係繪示來自在各種調變器電流值下對一樣品測試調變器之一電致發光量測之增益峰值波長對電流之一圖表。 These and other features and advantages of the present invention will be more fully understood and appreciated from the <RTIgt; An example of a modulated optical transmission system; FIG. 2 is a first embodiment of an external modulator coupled to a laser in accordance with the present invention; and FIG. 3 is coupled to one of the lasers in accordance with the present invention. A second embodiment of a modulator; FIG. 4 is a graph of current versus voltage operating characteristics of an electro-optical modulator of one of various input powers in accordance with the present invention and in accordance with the present invention; FIG. 5 is a diagram illustrating The output of the modulator under various current operating levels Rate vs. one of the modulator input powers; Figure 6 is a diagram showing the modulator output power versus modulator input power at various operating levels according to one of the Mach-Zehnder or EA modulators known in the prior art. Figure 7 is a graph showing the modal gain versus a peak wavelength of a given gain for a given composition of a modulator waveguide; Figure 8 is a modal representation of a modulator waveguide design. Gain vs. one of the wavelengths showing the peak wavelength of the gain and a range of potential operating wavelengths; Figure 9 is a graph showing the modal gain versus the peak wavelength of a given composition for a given composition of the modulator waveguide and the wavelength of a selected operating wavelength. One of the graphs; Figure 10 is a graph showing one of the wavelengths of the modal gain versus electroluminescence peak wavelength for one of the sample test modulators at various modulator current values; and Figure 11 A plot of gain peak wavelength versus current from one of the electroluminescence measurements of a sample test modulator at various modulator current values is plotted.
熟習此項技術者自本發明(包含以下詳細說明)以及藉由實踐本發明將顯而易見本發明之額外目標、優點及新穎特徵。儘管下文參考較佳實施例來闡述本發明，但應理解，本發明並不限於此。已閱讀本文中之教示之熟習此項技術者將識別額外應用、修改及其他領域中之實施例，該等額外應用、修改及其他領域中之實施例在如本文中所揭示及所主張之本發明之範疇內，且關於其，本發明可具有實用性。 Additional objects, advantages and novel features of the invention are apparent from the <RTIgt; Although the invention is described below with reference to the preferred embodiments, it should be understood that the invention is not limited thereto. Those skilled in the art who have read the teachings herein will recognize additional applications, modifications, and embodiments in other fields, and such additional applications, modifications, and other embodiments in the field are disclosed and claimed herein. Within the scope of the invention, and with regard to it, the invention may have utility.
現在將闡述本發明之細節，包含其例示性態樣及實施例。參考圖式及以下說明，相同元件符號用來識別相同或在功能上類似之元件，且意欲以一高度簡化之圖示方式圖解說明例示性實施例之主要特徵。此外，圖式不意欲繪示實際實施例之每一特徵及所繪示元件之相對尺寸，且並非按比例繪製。 The details of the invention, including its illustrative aspects and embodiments, are now set forth. The same element symbols are used to identify the same or functionally similar elements, and are intended to illustrate the main features of the exemplary embodiments in a highly simplified illustration. In addition, the figures are not intended to depict each feature of the actual embodiments and the relative dimensions of the illustrated elements, and are not drawn to scale.
遍及本說明書對「一項實施例」或「一實施例」之參考意指連 同該實施例一起闡述之一特定特徵、結構或特性包含於本發明之至少一項實施例中。因此，遍及本說明書之各個地方出現之片語「在一項實施例中」或「在一實施例中」未必全部係指相同實施例。此外，特定特徵、結構或特性可以任何適合方式組合於一或多個實施例中。 References throughout the specification to "an embodiment" or "an embodiment" means One particular feature, structure, or characteristic set forth in connection with the embodiment is included in at least one embodiment of the invention. The appearances of the phrase "in an embodiment" or "in an embodiment" Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
圖1係一先前技術光學傳輸系統之方塊圖，其中資訊或「內容」(諸如音訊、視訊、資料檔案、資料庫或其他資料)由一光學傳輸器經由一光纖鏈路傳輸至一遠端接收器，其中該資訊內容被複製、顯示、執行、實施或以其他方式利用。光學傳輸器可(諸如)表示於利用一外部調變器之第5,699,179號美國專利中。傳輸器(通常展示於10處)經由一光纖路徑20將一光學信號傳輸至一遠端接收器30。傳輸器10包含產生一連續波(CW)輸出之一半導體雷射11。此類雷射之典型實例係分佈式回饋(DFB)雷射或產生在1,550nm之一波長下之一輸出光束之法布裏-帕羅(Fabry-Perot)雷射。來自雷射之未調變之光學信號藉由光纖12耦合至一調變器13。調變器13可係一單個調變器(諸如一馬赫-曾德爾調變器)、一級聯MZ調變器或一個以上調變器(諸如在一前饋線性化器中)。 1 is a block diagram of a prior art optical transmission system in which information or "content" (such as audio, video, data files, databases, or other materials) is transmitted by an optical transmitter to a remote end via a fiber optic link. The information content is copied, displayed, executed, implemented, or otherwise utilized. An optical transmitter can be shown, for example, in U.S. Patent No. 5,699,179, the disclosure of which is incorporated herein. A transmitter (generally shown at 10) transmits an optical signal to a remote receiver 30 via a fiber path 20. Transmitter 10 includes a semiconductor laser 11 that produces a continuous wave (CW) output. A typical example of such a laser is a distributed feedback (DFB) laser or a Fabry-Perot laser that produces an output beam at one of the wavelengths of 1,550 nm. The unmodulated optical signal from the laser is coupled to a modulator 13 by an optical fiber 12. The modulator 13 can be a single modulator (such as a Mach-Zehnder modulator), a cascade MZ modulator, or more than one modulator (such as in a feedforward linearizer).
資訊或含內容之信號14(諸如音訊、視訊或資料)最初以一適合傳輸頻道或頻帶轉換成一寬帶RF信號(諸如一振幅調變殘留邊帶(AM-SDB)電纜電視(CATV)或視訊信號)或者以數位格式表示資料之一數位信號(諸如一正交振幅調變(QAM)符號)。寬帶RF信號15經由在其表面上之一端子或電極施加至調變器13。一電偏壓16亦施加至調變器13。 Information or content-containing signals 14 (such as audio, video or data) are initially converted into a wideband RF signal (such as an amplitude modulated vestigial sideband (AM-SDB) cable television (CATV) or video signal in a suitable transmission channel or frequency band. Or represent a digital signal (such as a Quadrature Amplitude Modulation (QAM) symbol) in a digital format. The wideband RF signal 15 is applied to the modulator 13 via one of the terminals or electrodes on its surface. An electrical bias 16 is also applied to the modulator 13.
在某些實施例中，載運視訊資料之經調變光學信號可耦合至一放大器17，該放大器又耦合至一光纖鏈路20。放大器17通常係一摻雜鉺之光纖放大器(EDFA)。經放大光學信號經由光纖傳輸鏈路20傳輸至接收器30。光纖傳輸鏈路20可係延伸高達100km之一長距離鏈路。在此情形中，可沿著線路以間隔開之間隔提供線路放大器(諸如EDFA 17)以便使信號升壓至所要位準。在接收器30處，亦可提供一放大器(未展示)以使傳入光學信號升壓。經升壓信號然後施加至一光偵測器且在接收器30處解調變為一RF電信號31，該RF電信號施加至一終端機或顯示器32，其中在遠端位置處複製原始音訊、視訊或資料信號。 In some embodiments, the modulated optical signal carrying video data can be coupled to an amplifier 17, which in turn is coupled to a fiber optic link 20. Amplifier 17 is typically an erbium doped fiber amplifier (EDFA). The amplified optical signal is transmitted to the receiver 30 via the fiber optic transmission link 20. The fiber optic transmission link 20 can be a long distance link extending up to 100 km. In this case, line amplifiers (such as EDFAs) can be provided at spaced intervals along the line. 17) to boost the signal to the desired level. At the receiver 30, an amplifier (not shown) may also be provided to boost the incoming optical signal. The boosted signal is then applied to a photodetector and demodulated at the receiver 30 to become an RF electrical signal 31 that is applied to a terminal or display 32 where the original audio is copied at the remote location , video or data signal.
圖2係根據本發明之包含耦合至一雷射之一外部調變器之一光學傳輸器之一第一實施例。繪示產生一連續波(CW)輸出之一半導體雷射11。雷射11在表示為偏壓(1)之一電偏壓下操作。來自雷射之未調變之光束藉由光纖50或藉由自由空間傳播耦合至一外部調變器51。調變器51組態為具有耦合至其且在表示為偏壓(2)之一電偏壓下操作之電極之一波導，偏壓(2)小於偏壓(1)。在某些實施例中，偏壓(2)可係0.8伏，且偏壓(1)可係1.2伏。在某些實施例中，偏壓(2)可係自將會在調變器由源雷射泵激且自耦合至調變器之電極無電流注入或提取之情況下發生之電壓之值加或減0.1伏。在某些實施例中，偏壓(2)可在0.7伏至0.9伏之範圍內。在某些實施例中，偏壓(2)可在0.6伏至01.0伏之範圍內。 2 is a first embodiment of an optical transmitter including an external modulator coupled to one of the lasers in accordance with the present invention. A semiconductor laser 11 that produces a continuous wave (CW) output is shown. The laser 11 operates under an electrical bias expressed as one of the bias voltages (1). The unmodulated beam from the laser is coupled to an external modulator 51 by fiber 50 or by free space propagation. The modulator 51 is configured to have one of the electrodes coupled thereto and operated under an electrical bias expressed as one of the bias voltages (2), the bias voltage (2) being less than the bias voltage (1). In some embodiments, the bias voltage (2) can be 0.8 volts and the bias voltage (1) can be 1.2 volts. In some embodiments, the bias voltage (2) can be derived from the value of the voltage that would occur if the modulator was pumped by the source laser and self-coupled to the electrode of the modulator without current injection or extraction. Or minus 0.1 volts. In some embodiments, the bias voltage (2) can range from 0.7 volts to 0.9 volts. In some embodiments, the bias voltage (2) can range from 0.6 volts to 01.0 volts.
含資訊之RF信號53亦施加至調變器51之電極，使得在調變期間，施加至調變器之電偏壓保持小於偏壓(1)。施加至調變器51之電偏壓判定由調變器51吸收之來自雷射11之連續波光束量。以此方式，進入調變器之連續波光束由RF信號53修改或調變。一光學輸出經提供以將經調變光束傳送至一輸出光纖55。 The information-containing RF signal 53 is also applied to the electrodes of the modulator 51 such that during modulation, the electrical bias applied to the modulator remains less than the bias (1). The electrical bias applied to the modulator 51 determines the amount of continuous wave beam from the laser 11 that is absorbed by the modulator 51. In this way, the continuous wave beam entering the modulator is modified or modulated by the RF signal 53. An optical output is provided to deliver the modulated beam to an output fiber 55.
圖3係根據本發明之耦合至一雷射之一外部調變器之一第二實施例。圖3之裝置之設計及操作類似於圖2之裝置之設計及操作，惟雷射及調變器實施於一單個整體半導體裝置上除外。更特定而言，繪示包含以下各項之一半導體裝置100：一第一半導體區域103，其包含可操作以回應於電流注入而產生一同調光輸出之一雷射諧振器100；及一第二半導體區域104，其毗鄰於該第一半導體區域安置且藉由一通道 105而與其分離。第二半導體區域104具有光學耦合至其以接收自第一半導體區域103發出且橫穿通道105之同調光輸出之一光學輸入。 3 is a second embodiment of one of the external modulators coupled to a laser in accordance with the present invention. The design and operation of the apparatus of Figure 3 is similar to the design and operation of the apparatus of Figure 2 except that the laser and modulator are implemented on a single integral semiconductor device. More specifically, the present invention includes a semiconductor device 100 including a first semiconductor region 103 including one of the laser resonators 100 operable to generate a dimming output in response to current injection; a semiconductor region 104 disposed adjacent to the first semiconductor region and having a channel 105 and separated from it. The second semiconductor region 104 has an optical input optically coupled thereto for receiving a dimming output that is emitted from the first semiconductor region 103 and traverses the channel 105.
第一半導體裝置103由頂部表面上之一電極107加電偏壓，該電極連接至一外部電偏壓電位106以將電流注入至區域103中。第二半導體裝置包含：一波導層，其用於傳送來自光學輸入之光束；一電極109，其連接至一射頻信號輸入110及一偏壓電位108以在波導中形成一電場且在光束橫穿波導時對該光束進行光學調變。第二半導體裝置進一步包含連接至波導以將經調變光學信號傳送至一外部光纖或其他光學組件之一光學輸出112。施加至電極109之偏壓電壓被適當地選擇，使得波導中之同調光束由所施加RF信號藉由以下方式光學調變：修改或調變半導體裝置中之吸收特性，同時自半導體裝置提取由於連續波同調光束之光吸收而在波導中產生之電流。所產生之RF及DC電流分別由RF源及DC偏壓汲取。 The first semiconductor device 103 is electrically biased by an electrode 107 on the top surface that is coupled to an external electrical bias potential 106 to inject current into the region 103. The second semiconductor device includes: a waveguide layer for transmitting a light beam from the optical input; an electrode 109 coupled to a radio frequency signal input 110 and a bias potential 108 to form an electric field in the waveguide and in the beam transverse direction The beam is optically modulated as it passes through the waveguide. The second semiconductor device further includes an optical output 112 coupled to the waveguide to transmit the modulated optical signal to an external optical fiber or other optical component. The bias voltage applied to the electrode 109 is suitably selected such that the coherent beam in the waveguide is optically modulated by the applied RF signal by modifying or modulating the absorption characteristics in the semiconductor device while extracting from the semiconductor device due to continuous The light of the wave coherent beam absorbs the current generated in the waveguide. The resulting RF and DC currents are drawn by the RF source and DC bias, respectively.
在某些實施例中，雷射及調變器包括一單晶片InP半導體裝置。雷射可包括具有毗鄰於該調變器安置之一鏡像第一端區域及一第二端區域之一InP半導體增益結構區域103。第一電極107安置於InP半導體增益結構103上方，且第二電極109安置於InP半導體波導結構104上方，且一接地電極102提供為在整個半導體結構之底部表面上方延伸。 In some embodiments, the laser and modulator comprise a single wafer InP semiconductor device. The laser can include an InP semiconductor gain structure region 103 having one of a mirrored first end region and a second end region disposed adjacent to the modulator. The first electrode 107 is disposed over the InP semiconductor gain structure 103, and the second electrode 109 is disposed over the InP semiconductor waveguide structure 104, and a ground electrode 102 is provided to extend over the bottom surface of the entire semiconductor structure.
在其中雷射與調變器整合於一單個半導體基板上之實施例中，延伸約1微米進入至該基板中之一垂直間隙將雷射與調變器或第一半導體區域103與第二半導體區域104電分離。 In embodiments in which the laser and modulator are integrated on a single semiconductor substrate, extending about 1 micron into one of the vertical gaps in the substrate, the laser and modulator or first semiconductor region 103 and second semiconductor Region 104 is electrically separated.
在其他實施例中，雷射及調變器實施於兩個毗鄰離散半導體裝置上，諸如圖2中所繪示。在某些實施例中，具有小於1微米之一寬度之一氣隙可將雷射與調變器裝置分離。 In other embodiments, the laser and modulator are implemented on two adjacent discrete semiconductor devices, such as depicted in FIG. In some embodiments, an air gap having a width of less than one micron can separate the laser from the modulator device.
第一半導體裝置103由頂部表面上之一電極107加電偏壓，該電 極連接至一外部電偏壓電位106。第二半導體裝置104以比第一半導體裝置103低之一第二偏壓電位被加電偏壓。將參考圖4更詳細地闡述第二半導體裝置104之特定偏壓及該裝置之操作電流對電壓特性。 The first semiconductor device 103 is electrically biased by one of the electrodes 107 on the top surface, the electricity The pole is connected to an external electrical bias potential 106. The second semiconductor device 104 is energized and biased at a second bias potential lower than the first semiconductor device 103. The particular bias voltage of the second semiconductor device 104 and the operating current versus voltage characteristics of the device will be explained in more detail with reference to FIG.
圖4係先前技術中及根據本發明之針對連續波光束之各種輸入功率(即，10mW、20mW、30mW及40mW)之一電光學調變器之電流對電壓操作特性之一圖表。在先前技術中，在一電吸收調變器中，波導經加偏壓以在如標記為「先前技術EA操作範圍」之虛線區域所展示之一負電壓、正電流區域中操作。在根據本發明之調變器中，波導經加偏壓以在如標記為「所提議操作範圍」之虛線區域所展示之一正電壓、較高負電流區域中操作。 4 is a graph of current versus voltage operating characteristics of one of the electro-optical modulators of the various input powers (ie, 10 mW, 20 mW, 30 mW, and 40 mW) for the continuous wave beam in the prior art and in accordance with the present invention. In the prior art, in an electroabsorption modulator, the waveguide is biased to operate in a negative voltage, positive current region as shown by the dashed line region labeled "Prior Art EA Operating Range." In a modulator according to the present invention, the waveguide is biased to operate in a positive voltage, higher negative current region as shown by the dashed line region labeled "Proposed Operating Range."
在不存在任何所施加偏壓信號之情況下，少量之連續波光束在調變器中被吸收且此致使一穩態載波密度在調變器中積累。此等載波與約一奈秒之一典型使用壽命重新組合。當藉由光學吸收產生之載波之數目與通過重新組合丟失之數目平衡時，達到一均衡位準。在一實施例中，當載波位準低時，吸收為高的；且當載波密度高時，吸收為低的。當施加偏壓信號時，自調變器提取載波。此降低載波密度，且因此增加調變器之吸收。特定而言，若自調變器提取-10mA之一電流，則吸收增加產生彼-10mA之電流所需之一量。類似地，若自調變器提取-20mA之一電流，則吸收增加產生彼-20mA之電流所需之一量。闡述操作之另一方式係，半導體波導中之由連續波光束產生之載波經激發成一導電帶且藉由一所施加電偏壓場自半導體區域提取。 In the absence of any applied bias signal, a small number of continuous wave beams are absorbed in the modulator and this causes a steady state carrier density to accumulate in the modulator. These carriers are recombined with a typical lifetime of approximately one nanosecond. An equalization level is reached when the number of carriers generated by optical absorption is balanced by the number of losses lost by recombination. In one embodiment, the absorption is high when the carrier level is low; and the absorption is low when the carrier density is high. The self-modulator extracts the carrier when a bias signal is applied. This reduces the carrier density and thus increases the absorption of the modulator. In particular, if the self-modulator extracts one of the currents of -10 mA, the absorption increases by one amount required to produce a current of -10 mA. Similarly, if the self-modulator extracts one of the currents of -20 mA, the absorption increases by one amount required to produce a current of -20 mA. Another way of describing the operation is that the carrier generated by the continuous wave beam in the semiconductor waveguide is excited into a conductive strip and extracted from the semiconductor region by an applied electrical bias field.
圖5展示根據本發明之調變器之輸出功率對輸入功率之一圖表，其中參數係自調變器提取之電流。由於所提議調變器具有一低RF阻抗，因此可能以接近於一電流源調變之一方式對其進行調變(至少降低至輸出功率接近於0之點)。如可自圖5看出，此實際上調變裝置之飽和功率。當在例如30mW之一固定輸入功率下操作時，淨效應係對 光學輸出功率之一調變。操作類似於其中自輸入連續波光束吸收對應於所提取電流之一光量之一光學功率減少裝置。事實上，在吸收對應於所提取電流之光量之後，該吸收機構飽和。 Figure 5 shows a plot of output power versus input power of a modulator in accordance with the present invention, wherein the parameters are currents drawn from the modulator. Since the proposed modulator has a low RF impedance, it may be modulated in a manner close to one of the current source modulations (at least to a point where the output power is close to zero). As can be seen from Figure 5, this actually modulates the saturation power of the device. When operating at a fixed input power of, for example, 30 mW, the net effect is One of the optical output powers is modulated. The operation is similar to an optical power reduction device in which one of the light amounts corresponding to one of the extracted currents is absorbed from the input continuous wave beam. In fact, the absorption mechanism is saturated after absorbing the amount of light corresponding to the extracted current.
應將圖5之調變器之操作與其中調變光傳輸因數之一傳統調變器作比較。圖6展示關於一MZ或EA類型調變器發生之情況。此圖6中之參數係通過調變器之傳輸。針對30mW之一固定輸入功率，產生類似於所提議調變器之輸出之一經調變輸出。然而，與所提議調變器之飽和類型變化相比，藉助一固定偏壓信號之輸出光學功率與輸入光學功率之變化實質上係線性的。此反映所提議調變器中所涉及之根本上不同之調變機制。 The operation of the modulator of Figure 5 should be compared to a conventional modulator in which the modulated optical transmission factor is one. Figure 6 shows what happens with an MZ or EA type modulator. The parameters in this Figure 6 are transmitted through the modulator. For one of the fixed input powers of 30 mW, a modulated output similar to one of the outputs of the proposed modulator is produced. However, the change in output optical power and input optical power by a fixed bias signal is substantially linear compared to the saturation type variation of the proposed modulator. This reflects the fundamentally different modulation mechanisms involved in the proposed modulator.
圖7係繪示針對調變器波導之一給定組合物之模態增益對展示增益峰值波長之波長之一圖表。應注意，針對穿過調變器之不同電流值，存在不同最大或峰值模態增益值。 Figure 7 is a graph showing one of the wavelengths of the modal gain versus display peak wavelength for a given composition for one of the modulator waveguides. It should be noted that there are different maximum or peak modal gain values for different current values through the modulator.
圖8係繪示針對一調變器波導之設計之模態增益對展示增益峰值波長及一潛在操作波長範圍之波長之一圖表。 Figure 8 is a graph showing one of the wavelengths of the modal gain versus display gain peak wavelength and a potential operating wavelength range for a modulator waveguide design.
圖9係繪示針對調變器波導之一給定組合物之模態增益對展示增益峰值波長及一選定操作波長之波長之一圖表。 Figure 9 is a graph showing one of the modal gain versus display gain peak wavelengths and a selected operating wavelength for a given composition for one of the modulator waveguides.
在根據本發明之所提議裝置中，調變器區段104中之材料主要由來自操作DC之源雷射103之光泵激。在一測試環境中，可在其中既不注入DC電流亦不自調變器提取DC電流之開路電路條件下評估調變器。在此開路電路條件下，調變器區段104中之材料經泵激以給出僅低於該材料變得光學透明或者不具有淨吸收或增益之位準之一載波密度。在此條件下，調變器接面處於對應於約0.8伏正向偏壓(類似於一太陽能電池之開路電路電壓)之一電壓。 In the proposed arrangement according to the invention, the material in the modulator section 104 is primarily pumped by light from a source laser 103 that operates DC. In a test environment, the modulator can be evaluated under open circuit conditions in which neither DC current is injected nor DC current is extracted from the modulator. Under this open circuit condition, the material in the modulator section 104 is pumped to give a carrier density that is only below the level at which the material becomes optically transparent or does not have a net absorption or gain. Under this condition, the modulator junction is at a voltage corresponding to a forward bias of approximately 0.8 volts (similar to the open circuit voltage of a solar cell).
調變器不必須與開路電路偏壓條件一起使用。可藉由注入電流而加偏壓於調變器，在該情形中，材料將朝向光學增益或提取電流移 動，在該情形中，與開路電路偏壓條件相比，吸收增加。圖7中所繪圖之曲線中之電流值對繪示在不同電流值下之典型增益峰值波長而言僅意欲為標稱的或代表性的，此乃因所繪示資料來源於僅電泵激之一原型測試結構，其不同於將在實際實踐中使用且將主要光學泵激之所提議調變器。雖然在實驗上無法直接量測針對光學泵激情形之光學增益曲線，但資料係建議性的且據信，類似於圖7中針對電泵激之測試結構所繪圖之曲線，針對光學泵激情形之對應曲線針對增加之電流向上及向左移動。 The modulator does not have to be used with an open circuit bias condition. The bias can be biased by injecting current, in which case the material will move toward optical gain or current draw In this case, the absorption is increased compared to the open circuit bias condition. The current values in the curves plotted in Figure 7 are intended to be nominal or representative only for typical gain peak wavelengths at different current values, since the data presented are derived from electro-pump only One prototype test structure, which differs from the proposed modulator that will be used in practice and will be primarily optically pumped. Although it is experimentally impossible to directly measure the optical gain curve for the passion of the optical pump, the data is suggestive and believed to be similar to the curve plotted in Figure 7 for the electrically pumped test structure, for the optical pump passion The corresponding curve moves upwards and to the left for the increased current.
本發明不相對於調變器增益曲線規定信號波長，此乃因其可取決於其他產品設計規範及顧客應用環境。然而，本發明之一項態樣係用於一光學調變器之設計及如何針對給定操作規範或要求規定材料之波長之製造方法。兩種方法係合理的且係本發明之實施例。一種方法係判定光致發光(PL)峰值波長。在此情形中，光學泵激材料且藉由市售光致發光儀器量測自材料發出之光之頻譜。此對光致發光(PL)峰值波長之量測不同於對增益曲線之量測，但其為相關的。舉例而言，用於圖10中所呈現之增益資料之材料具有1574nm之一PL峰值波長。一第二種方法將係規定在某一特定泵激條件下之增益曲線之峰值。所有泵激均為用於規定一增益峰值之一良好實驗方法，此乃因不存在任何增益峰值，吸收僅隨著波長減小而穩定地變大。泵激調變器直至在某一特定位準下存在一增益峰值係嘗試規定此之另一方式，但據信不如PL峰值那樣進行良好界定。本發明之一項實施例因此提供做出一PL量測及使用PL波長，因此判定為表徵材料之一方法。在操作方面，將希望使信號波長低於PL峰值，此不同於EA調變器中之半導體材料之設計，其中EA調變器中之信號波長通常比峰值PL波長大得多。本發明之一項實施例因此提供比PL峰值低至少10nm之操作波長之選擇或規範。在某些實施例中，操作波長之選擇或規範係比PL峰值低30 nm之操作波長。 The present invention does not specify the signal wavelength relative to the modulator gain curve, as it may depend on other product design specifications and the customer application environment. However, one aspect of the present invention is directed to the design of an optical modulator and how to specify the wavelength of the material for a given operational specification or requirement. Both methods are reasonable and are embodiments of the invention. One method is to determine the photoluminescence (PL) peak wavelength. In this case, the material is optically pumped and the spectrum of the light emitted from the material is measured by a commercially available photoluminescent apparatus. This measurement of the photoluminescence (PL) peak wavelength is different from the measurement of the gain curve, but it is correlated. For example, the material used for the gain profile presented in Figure 10 has a PL peak wavelength of 1574 nm. A second method would specify the peak of the gain curve for a particular pumping condition. All pumping is a good experimental method for specifying a gain peak because there is no gain peak, and absorption only steadily increases as the wavelength decreases. Pumping the modulator until there is a gain peak at a particular level is another way of trying to dictate this, but is believed to be well defined as the PL peak. An embodiment of the present invention thus provides a method of making a PL measurement and using a PL wavelength, thus determining one of the characterization materials. In terms of operation, it would be desirable to have the signal wavelength below the PL peak, which is different from the design of the semiconductor material in the EA modulator, where the signal wavelength in the EA modulator is typically much larger than the peak PL wavelength. An embodiment of the invention thus provides a choice or specification of operating wavelengths that are at least 10 nm lower than the PL peak. In some embodiments, the selection or specification of the operating wavelength is 30 less than the PL peak. The operating wavelength of nm.
圖10係繪示來自在各種調變器電流值下對一樣品測試調變器之一電致發光(EL)量測之模態增益對展示增益峰值波長之波長之一圖表。在本發明之一項實施例中，推測為零電流之峰值波長係用以表徵材料之一適當且精確方式。在圖10中所圖解說明之此情形中，峰值波長係約1589nm。此不同於PL特性，PL特性針對相同測試晶圓為1574nm。在將與此材料一起使用之操作波長方面，在本發明之一項實施例中，適合波長將在1540nm至1550nm之範圍內。在本發明之另一實施例中，操作波長將比增益峰值波長低至少30nm。在本發明之另一實施例中，操作波長將在比增益峰值波長低40nm至30nm之範圍內。 Figure 10 is a graph showing one of the wavelengths from the modal gain versus electroluminescence peak wavelength for one of the sample test modulators at various modulator current values. In one embodiment of the invention, the peak wavelength of the zero current is presumed to characterize one of the materials in an appropriate and precise manner. In the case illustrated in Figure 10, the peak wavelength is about 1589 nm. This is different from the PL characteristic, which is 1574 nm for the same test wafer. In terms of the operating wavelength to be used with this material, in one embodiment of the invention, the suitable wavelength will be in the range of 1540 nm to 1550 nm. In another embodiment of the invention, the operating wavelength will be at least 30 nm below the gain peak wavelength. In another embodiment of the invention, the operating wavelength will be in the range of 40 nm to 30 nm below the gain peak wavelength.
圖11係繪示來自在各種調變器電流值下對一樣品測試調變器之一電致發光量測之增益峰值波長對電流之一圖表。 Figure 11 is a graph showing one of gain peak wavelength versus current from one of the sample test modulators at various modulator current values.
基於材料之前述特性，在本發明之一項實施例中，本發明提供一種製造包含一半導體裝置之用於光學通信之一雷射傳輸器之方法，該半導體裝置包含：(a)一第一半導體區域，其用於回應於電流注入而產生一同調光輸出；及(b)一第二半導體區域，其毗鄰於該第一半導體區域安置且藉由一通道而與其分離，該第二半導體區域具有光學耦合至其以自該第一半導體區域接收該同調光輸出之一光學輸入及連接至該第二半導體區域以傳送經調變光學信號之一光學輸出，該方法包括以下步驟：提供該傳輸器經設計以在其下操作之一預定波長值；在該第一半導體區域中形成一雷射諧振器；在該第二半導體區域中形成一半導體波導結構以傳送來自第一半導體區域光束之該同調光輸出；在該半導體波導結構中形成一光學調變器，該光學調變器包含具有一量子井區域之一作用層及一電極，該電極連接至一射頻信號輸入及一偏壓電位以在該波導結構中形成一電場，使得在該光束橫穿該波導時對該同調光輸出進行光學調變；及判定該量子井區域之材料組合 物，使得該調變器在比預定波長大一預定量之一增益峰值波長下係透明的；及用該所判定材料組合物製造該調變器。 Based on the foregoing characteristics of the material, in one embodiment of the present invention, the present invention provides a method of fabricating a laser transmitter for optical communication comprising a semiconductor device, the semiconductor device comprising: (a) a first a semiconductor region for generating a dimming output in response to current injection; and (b) a second semiconductor region disposed adjacent to the first semiconductor region and separated therefrom by a channel, the second semiconductor region Having optical input optically coupled thereto for receiving one of the coherent light output from the first semiconductor region and for connecting to the second semiconductor region to transmit an optical output of the modulated optical signal, the method comprising the steps of: providing the transmission The device is designed to operate a predetermined wavelength value therein; forming a laser resonator in the first semiconductor region; forming a semiconductor waveguide structure in the second semiconductor region to transmit the light beam from the first semiconductor region a dimming output; forming an optical modulator in the semiconductor waveguide structure, the optical modulator comprising one of a quantum well region Using a layer and an electrode, the electrode is coupled to an RF signal input and a bias potential to form an electric field in the waveguide structure such that the dimming output is optically modulated as the beam traverses the waveguide; Determining the material combination of the quantum well region The modulator is made transparent at a gain peak wavelength that is greater than a predetermined wavelength by a predetermined amount; and the modulator is fabricated from the determined material composition.
在另一態樣中，在本發明之一項實施例中，本發明提供一種製造包含一半導體裝置之用於光學通信之一雷射傳輸器之方法，該半導體裝置包含：(a)一第一半導體區域，其用於回應於電流注入而產生一同調光輸出；及(b)一第二半導體區域，其毗鄰於該第一半導體區域安置且藉由一通道而與其分離，該第二半導體區域具有光學耦合至其以自該第一半導體區域接收該同調光輸出之一光學輸入及連接至該第二半導體區域以傳送經調變光學信號之一光學輸出，該方法包括以下步驟：提供該傳輸器經設計以在其下操作之一預定波長值；在該第一半導體區域中形成一雷射諧振器；在該第二半導體區域中形成一半導體波導結構以傳送來自第一半導體區域光束之該同調光輸出；在該半導體波導結構中形成一光學調變器，該光學調變器包含具有一量子井區域之一作用層及一電極，該電極連接至一射頻信號輸入及一偏壓電位以在該波導結構中形成一電場，使得在該光束橫穿該波導時對該同調光輸出進行光學調變；及判定該量子井區域之材料組合物，使得該調變器在比預定波長大一預定量之一增益峰值波長下係透明的；及用該所判定材料組合物製造該調變器。 In another aspect, in one embodiment of the invention, the invention provides a method of fabricating a laser transmitter for optical communication comprising a semiconductor device, the semiconductor device comprising: (a) a a semiconductor region for generating a dimming output in response to current injection; and (b) a second semiconductor region disposed adjacent to the first semiconductor region and separated therefrom by a channel, the second semiconductor a region having an optical input optically coupled thereto for receiving the optical input from the first semiconductor region and coupled to the second semiconductor region for transmitting an optical output of the modulated optical signal, the method comprising the steps of: providing the The transmitter is designed to operate underneath a predetermined wavelength value; forming a laser resonator in the first semiconductor region; forming a semiconductor waveguide structure in the second semiconductor region to transmit light from the first semiconductor region The same dimming output; forming an optical modulator in the semiconductor waveguide structure, the optical modulator comprising an active layer having a quantum well region An electrode coupled to an RF signal input and a bias potential to form an electric field in the waveguide structure such that the dimming output is optically modulated as the beam traverses the waveguide; and determining the quantum a material composition of the well region such that the modulator is transparent at a gain peak wavelength that is greater than a predetermined wavelength by a predetermined amount; and the modulator is fabricated from the determined material composition.
在另一態樣中，在本發明之一項實施例中，本發明提供一種製造包含一半導體裝置之用於光學通信之一雷射傳輸器之方法，該半導體裝置包含：(a)一第一半導體區域，其用於回應於電流注入而產生一同調光輸出；及(b)一第二半導體區域，其毗鄰於該第一半導體區域安置且藉由一通道而與其分離，該第二半導體區域具有光學耦合至其以自該第一半導體區域接收該同調光輸出之一光學輸入及連接至該第二半導體區域以傳送經調變光學信號之一光學輸出，該方法包括以下步驟：提供該傳輸器經設計以在其下操作之一預定波長值；在該第 一半導體區域中形成一雷射諧振器；在該第二半導體區域中形成一半導體波導結構以傳送來自第一半導體區域光束之該同調光輸出；在該半導體波導結構中形成一光學調變器，該光學調變器包含具有一量子井區域之一作用層及一電極，該電極連接至一射頻信號輸入及一偏壓電位以在該波導結構中形成一電場，使得在該光束橫穿該波導時對該同調光輸出進行光學調變；及判定該量子井區域之材料組合物，使得該調變器在比預定波長大一預定量之一增益峰值波長下係透明的；及用該所判定材料組合物製造該調變器。 In another aspect, in one embodiment of the invention, the invention provides a method of fabricating a laser transmitter for optical communication comprising a semiconductor device, the semiconductor device comprising: (a) a a semiconductor region for generating a dimming output in response to current injection; and (b) a second semiconductor region disposed adjacent to the first semiconductor region and separated therefrom by a channel, the second semiconductor a region having an optical input optically coupled thereto for receiving the optical input from the first semiconductor region and coupled to the second semiconductor region for transmitting an optical output of the modulated optical signal, the method comprising the steps of: providing the The transmitter is designed to operate underneath a predetermined wavelength value; Forming a laser resonator in a semiconductor region; forming a semiconductor waveguide structure in the second semiconductor region to transmit the same dimming output from the first semiconductor region beam; forming an optical modulator in the semiconductor waveguide structure, The optical modulator includes an active layer having a quantum well region and an electrode coupled to an RF signal input and a bias potential to form an electric field in the waveguide structure such that the beam traverses the beam Optically modulating the same dimming output; and determining a material composition of the quantum well region such that the modulator is transparent at a gain peak wavelength greater than a predetermined wavelength by a predetermined amount; and The material composition is determined to produce the modulator.
雖然已藉助實例詳細演示了本發明之某些特定實施例，但熟習此項技術者應理解以上實例僅意欲為說明性的且不意欲限制本發明之範疇。應理解，可在不背離由隨附申請專利範圍界定之本發明之範疇及精神之情況下修改以上實施例。 While the invention has been described with respect to the specific embodiments of the present invention, the embodiments of the invention are intended to be illustrative and not intended to limit the scope of the invention. It is to be understood that the above embodiments may be modified without departing from the scope and spirit of the invention as defined by the appended claims.
11‧‧‧半導體雷射/雷射 11‧‧‧Semiconductor laser/laser
16‧‧‧電偏壓 16‧‧‧Electric bias
50‧‧‧光纖 50‧‧‧ fiber
51‧‧‧外部調變器/調變器 51‧‧‧External modulator/modulator
53‧‧‧含資訊之射頻訊號/射頻訊號 53‧‧‧ RF signals/RF signals with information
55‧‧‧輸出光纖 55‧‧‧ Output fiber
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