TW201523727A - Substrate processing method, substrate processing apparatus and storage medium - Google Patents

Substrate processing method, substrate processing apparatus and storage medium Download PDF

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TW201523727A
TW201523727A TW103128642A TW103128642A TW201523727A TW 201523727 A TW201523727 A TW 201523727A TW 103128642 A TW103128642 A TW 103128642A TW 103128642 A TW103128642 A TW 103128642A TW 201523727 A TW201523727 A TW 201523727A
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substrate
processing
liquid
wafer
treatment
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TW103128642A
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Chinese (zh)
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TWI584370B (en
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Miyako Kaneko
Takehiko Orii
Itaru Kanno
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Tokyo Electron Ltd
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Priority claimed from JP2014021599A external-priority patent/JP5937632B2/en
Priority claimed from JP2014021710A external-priority patent/JP6022490B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations

Abstract

Productivity can be improved. A substrate processing method includes a processing liquid supplying process of supplying a processing liquid, which contains a volatile component and forms a film on a substrate, onto the substrate on which a pre-treatment, which requires atmosphere management or time management after the pre-treatment, is performed; and an accommodating process of accommodating, in a transfer container, the substrate on which the processing liquid is solidified or cured by volatilization of the volatile component.

Description

基板處理方法、基板處理裝置及記憶媒體 Substrate processing method, substrate processing device, and memory medium

所揭示之實施形態，係關於基板處理方法、基板處理裝置及記憶媒體。 The disclosed embodiments relate to a substrate processing method, a substrate processing apparatus, and a memory medium.

以往，已知一種乾蝕刻工程，其係藉由對半導體晶圓等之基板進行乾蝕刻的方式，使形成於基板內部之金屬配線的一部分露出(參閱專利文獻1)。 Conventionally, a dry etching process has been known in which a part of a metal wiring formed inside a substrate is exposed by dry etching a substrate such as a semiconductor wafer (see Patent Document 1).

在藉由該乾蝕刻工程使基板內部的金屬配線露出之後，當長時間將基板置之不理時，會產生露出的金屬配線氧化等之不良影響。因此，對乾蝕刻工程後的放置時間，設有限制時間(Q-time)。 After the metal wiring inside the substrate is exposed by the dry etching process, when the substrate is left untreated for a long period of time, adverse effects such as oxidation of the exposed metal wiring occur. Therefore, there is a time limit (Q-time) for the placement time after the dry etching process.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2010-027786號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-027786

然而，在上述之習知技術中，由於必需實施用於遵守限制時間(Q-time)的時間管理，故伴隨著工時增加而造成生產率下降的問題。 However, in the above-described conventional technique, since it is necessary to implement time management for complying with the time limit (Q-time), there is a problem that productivity is lowered as the number of man-hours increases.

另外，上述之課題，並不限於進行乾蝕刻的情形，在進行濕式清洗或成膜處理等的情況下，也可能相同地產生該課題。 Further, the above-described problem is not limited to the case of dry etching, and the same problem may occur in the case of performing wet cleaning, film formation processing, or the like.

實施形態之一態樣，係以提供一種能夠使生產率提高之基板處理方法、前處理裝置、後處理裝置、基板處理系統及記憶媒體為目的。 In one aspect of the embodiment, it is an object of the invention to provide a substrate processing method, a pretreatment apparatus, a post-processing apparatus, a substrate processing system, and a memory medium capable of improving productivity.

實施形態之一態樣的基板處理方法，係包含有：處理液供給工程，對進行了在處理後必需實施環境管理或時間管理之前處理的基板，供給用於包含揮發成分並在基板上形成膜的處理液；及收容工程，藉由前述揮發成分揮發的方式，將前述處理液已固化或硬化的基板收容到搬送容器。 The substrate processing method according to one embodiment of the present invention includes a processing liquid supply process, and a substrate that has been subjected to environmental management or time management after processing, and is supplied with a volatile component and forms a film on the substrate. And the storage process, wherein the substrate on which the treatment liquid has been solidified or cured is stored in the transfer container by volatilization of the volatile component.

根據實施形態之一態樣，能夠使生產率提高。 According to one aspect of the embodiment, productivity can be improved.

W‧‧‧晶圓 W‧‧‧ wafer

P‧‧‧反應生成物 P‧‧‧Reaction product

1‧‧‧基板處理系統 1‧‧‧Substrate processing system

2‧‧‧第1處理裝置 2‧‧‧1st processing device

3‧‧‧第2處理裝置 3‧‧‧2nd processing device

4‧‧‧控制裝置 4‧‧‧Control device

12‧‧‧乾蝕刻單元 12‧‧‧ dry etching unit

12‧‧‧真空預備室 12‧‧‧vacuum preparation room

14‧‧‧第1液體處理單元 14‧‧‧1st liquid handling unit

19‧‧‧第2液體處理單元 19‧‧‧Second liquid handling unit

40_1，40_2，80‧‧‧液體供給部 40_1, 40_2, 80‧‧‧ Liquid Supply Department

101‧‧‧配線層 101‧‧‧Wiring layer

102‧‧‧Cu配線 102‧‧‧Cu wiring

103‧‧‧襯墊膜 103‧‧‧ liner film

104‧‧‧層間絕緣膜 104‧‧‧Interlayer insulating film

106‧‧‧導孔 106‧‧‧ Guide hole

[圖1A]圖1A，係第1實施形態之基板處理方法的說明圖。 [ Fig. 1A] Fig. 1A is an explanatory view of a substrate processing method according to a first embodiment.

[圖1B]圖1B，係第1實施形態之基板處理方法的說明圖。 Fig. 1B is an explanatory view of a substrate processing method according to the first embodiment.

[圖1C]圖1C，係第1實施形態之基板處理方法的說明圖。 Fig. 1C is an explanatory view of a substrate processing method according to the first embodiment.

[圖2]圖2，係表示第1實施形態之基板處理系統之概略構成的圖。 FIG. 2 is a view showing a schematic configuration of a substrate processing system according to the first embodiment.

[圖3]圖3，係表示第1處理裝置之概略構成的圖。 FIG. 3 is a view showing a schematic configuration of a first processing apparatus.

[圖4]圖4，係表示第2處理裝置之概略構成的圖。 Fig. 4 is a view showing a schematic configuration of a second processing device.

[圖5]圖5，係表示乾蝕刻單元之構成之一例的示意圖。 Fig. 5 is a schematic view showing an example of a configuration of a dry etching unit.

[圖6]圖6，係表示第1液體處理單元之構成之一例的示意圖。 Fig. 6 is a schematic view showing an example of a configuration of a first liquid processing unit.

[圖7]圖7，係表示第2液體處理單元之構成之一例的示意圖。 Fig. 7 is a schematic view showing an example of a configuration of a second liquid processing unit.

[圖8]圖8，係表示第1實施形態之基板處理之處理步驟的流程圖。 Fig. 8 is a flow chart showing the processing procedure of the substrate processing in the first embodiment.

[圖9A]圖9A，係表示背面洗淨處理之一例的圖。 9A] Fig. 9A is a view showing an example of a back surface cleaning process.

[圖9B]圖9B，係表示背面洗淨處理之一例的圖。 9B] Fig. 9B is a view showing an example of a back surface cleaning process.

[圖10]圖10，係表示背面洗淨處理之其他一例的圖。 FIG. 10 is a view showing another example of the back surface cleaning process.

[圖11]圖11，係表示背面洗淨處理之其他一例的圖。 FIG. 11 is a view showing another example of the back surface washing treatment.

[圖12]圖12，係表示第3實施形態之第1處理裝置之概略構成的圖。 [ Fig. 12] Fig. 12 is a view showing a schematic configuration of a first processing apparatus according to a third embodiment.

[圖13]圖13，係表示第3實施形態之第2處理裝置之概略構成的圖。 [Fig. 13] Fig. 13 is a view showing a schematic configuration of a second processing apparatus according to a third embodiment.

[圖14]圖14，係表示第4實施形態之第2處理裝置之概略構成的圖。 [ Fig. 14] Fig. 14 is a view showing a schematic configuration of a second processing apparatus according to a fourth embodiment.

[圖15]圖15，係表示第4實施形態之去除單元之構成之一例的示意圖。 Fig. 15 is a schematic view showing an example of a configuration of a removing unit in the fourth embodiment.

[圖16]圖16，係表示第5實施形態之第2處理裝置之概略構成的圖。 [ Fig. 16] Fig. 16 is a view showing a schematic configuration of a second processing apparatus according to a fifth embodiment.

[圖17]圖17，係表示應用成膜用處理液供給處理及去除處理之程序之例子的圖。 [Fig. 17] Fig. 17 is a view showing an example of a procedure for applying a processing liquid supply processing and a removal processing for film formation.

以下，參閱添附圖面，詳細說明本申請案所揭示之基板處理方法、基板處理裝置及記憶媒體的實施形態。另外，該發明並不受以下所示之實施形態限定者。 Hereinafter, embodiments of the substrate processing method, the substrate processing apparatus, and the memory medium disclosed in the present application will be described in detail with reference to the accompanying drawings. Further, the invention is not limited by the embodiments shown below.

(第1實施形態) (First embodiment) <基板處理方法之內容> <Contents of substrate processing method>

首先，使用圖1A~圖1C，說明第1實施形態之基板處理方法。圖1A~圖1C，係第1實施形態之基板處理方法的說明圖。 First, the substrate processing method according to the first embodiment will be described with reference to Figs. 1A to 1C. 1A to 1C are explanatory views of a substrate processing method according to the first embodiment.

第1實施形態之基板處理方法，係不受Q- time之限制，而可處理形成於內部之金屬配線的至少一部分露出之半導體晶圓等的基板(以下，記載為晶圓W)。 The substrate processing method according to the first embodiment is not subject to Q- A substrate (hereinafter referred to as a wafer W) such as a semiconductor wafer exposed to at least a part of the metal wiring formed inside can be processed under the limitation of time.

在此，Q-time，係指為了防止例如由乾蝕刻所露出的金屬配線氧化等，而對乾蝕刻後之放置時間予以設定的限制時間。 Here, Q-time refers to a time limit for setting the standing time after dry etching in order to prevent oxidation of metal wiring exposed by, for example, dry etching.

當設定Q-time時，由於必需實施用於遵守Q-time之時間管理，故有伴隨著工時增加而造成生產率下降之虞。又，在所設定之Q-time較短的情況下，管線管理會變得困難。故，亦讓人擔心因管線管理之複雜化而造成生產率下降。 When the Q-time is set, since it is necessary to implement the time management for complying with the Q-time, the productivity is lowered as the number of working hours increases. Also, when the set Q-time is short, pipeline management becomes difficult. Therefore, there are also concerns about the decline in productivity due to the complexity of pipeline management.

如圖1A所示，晶圓W，係具有例如配線層101、襯墊膜103及層間絕緣膜104。該些，係以配線層101、襯墊膜103及層間絕緣膜104的順序進行層積。在配線層101，係形成有作為金屬配線之一例的Cu配線102。 As shown in FIG. 1A, the wafer W has, for example, a wiring layer 101, a liner film 103, and an interlayer insulating film 104. These are laminated in the order of the wiring layer 101, the liner film 103, and the interlayer insulating film 104. In the wiring layer 101, a Cu wiring 102 as an example of a metal wiring is formed.

又，晶圓W，係具有導孔106。導孔106，係藉由乾蝕刻予以形成。導孔106係到達至配線層101，而形成為Cu配線102之表面從導孔106之底部露出的狀態。 Further, the wafer W has a via hole 106. The via 106 is formed by dry etching. The via hole 106 reaches the wiring layer 101, and is formed in a state in which the surface of the Cu wiring 102 is exposed from the bottom of the via hole 106.

在第1實施形態之基板處理方法中，係如圖1B所示，將包含揮發成分且用於在晶圓W上形成膜的處理液(以下，記載為「成膜用處理液」)供給至晶圓W上。具體而言，在第1實施形態中，係將用於在晶圓W上形成面塗層膜的成膜用處理液(以下，記載為面塗層 液)供給至晶圓W上。 In the substrate processing method of the first embodiment, as shown in FIG. 1B, a processing liquid (hereinafter referred to as "film forming processing liquid") containing a volatile component and forming a film on the wafer W is supplied to Wafer W. Specifically, in the first embodiment, a film forming treatment liquid for forming a top coat film on the wafer W (hereinafter referred to as a top coat layer) is used. The liquid) is supplied onto the wafer W.

在此，面塗層膜，係指為了防止液浸液滲入至光阻膜，而塗佈至光阻膜上面的保護膜。又，液浸液，係例如在光微影製程中使用於浸液曝光的液體。 Here, the top coat film refers to a protective film applied to the upper surface of the photoresist film in order to prevent the liquid immersion liquid from penetrating into the photoresist film. Further, the liquid immersion liquid is, for example, a liquid used for exposure to immersion liquid in a photolithography process.

被供給至晶圓W上的面塗層液，係一邊藉由包含於其內部之揮發成分揮發而引起體積收縮，一邊固化或硬化，形成為面塗層膜(參閱圖1C)。另外，在面塗層液，係包含具有於固化或硬化時體積收縮之性質的丙烯酸樹脂，藉由該丙烯酸樹脂之硬化收縮，亦會引起面塗層液之體積收縮。在此，所指的「固化」係固體化之意，「硬化」係分子彼此連結而高分子化(例如，交聯或聚合等)之意。 The top coat liquid supplied onto the wafer W is cured or cured by volatilization of volatile components contained therein, and is formed into a top coat film (see FIG. 1C). Further, the top coat liquid contains an acrylic resin having a property of volume shrinkage upon curing or hardening, and the shrinkage of the acrylic resin causes shrinkage of the top coat liquid. Here, the term "curing" means solidification, and "hardening" means that molecules are linked to each other and polymerized (for example, cross-linking or polymerization).

當面塗層膜形成於晶圓W上時，藉由乾蝕刻所露出之Cu配線102，係形成為被面塗層膜覆蓋的狀態。晶圓W，係以該狀態被收容到搬送容器。 When the top coat film is formed on the wafer W, the Cu wiring 102 exposed by dry etching is formed in a state of being covered by the top coat film. The wafer W is housed in the transfer container in this state.

如此一來，根據第1實施形態之基板處理方法，藉由以面塗層膜保護露出之Cu配線102的方式，由於露出之Cu配線102不會受到氧化等的不良影響，故不需進行Q-time之設定。因不需Q-time，故用於遵守Q-time之時間管理也變得不需要，又，伴隨著遵守Q-time，亦可防止管線管理複雜化。因此，根據第1實施形態之基板處理方法，能夠使生產率提升。 According to the substrate processing method of the first embodiment, the exposed Cu wiring 102 is protected by the top coat film, and the exposed Cu wiring 102 is not adversely affected by oxidation or the like, so that it is not necessary to perform Q. -time setting. Since Q-time is not required, time management for observing Q-time is also unnecessary, and along with Q-time, pipeline management can be prevented from being complicated. Therefore, according to the substrate processing method of the first embodiment, productivity can be improved.

又，反應生成物P會因乾蝕刻的殘留氣體與大氣中之水分或氧氣產生反應而生長。對此，根據第1實 施形態之基板處理方法，藉由以面塗層膜保護露出之Cu配線102的方式，可抑制反應生成物P之生長。因此，亦可防止反應生成物P所致之電氣特性下降或良率下降等的不良影響。 Further, the reaction product P grows by reacting the residual gas of the dry etching with moisture or oxygen in the atmosphere. In this regard, according to the first real In the substrate processing method of the embodiment, the growth of the reaction product P can be suppressed by protecting the exposed Cu wiring 102 with the top coat film. Therefore, it is possible to prevent adverse effects such as a decrease in electrical characteristics or a decrease in yield due to the reaction product P.

另外，第1實施形態之基板處理方法，係在取出收容於搬送容器的晶圓W之後，藉由去除形成於晶圓W上之面塗層膜的方式，亦進行去除由乾蝕刻或灰化所產生之聚合物等之反應生成物P的處理。 Further, in the substrate processing method according to the first embodiment, after the wafer W accommodated in the transfer container is taken out, the top coat film formed on the wafer W is removed, and the dry etching or ashing is also performed. The treatment of the reaction product P of the produced polymer or the like.

具體而言，將去除面塗層膜的去除液供給至面塗層膜上。在第1實施形態中，係使用鹼顯像液作為去除液。 Specifically, the removal liquid for removing the top coat film is supplied onto the top coat film. In the first embodiment, an alkali developing solution is used as the removing liquid.

藉由供給鹼顯像液的方式，面塗層膜會從晶圓W剝離。此時，殘存於晶圓W上之反應生成物P，亦與面塗層膜從晶圓W剝離。藉此，可從晶圓W去除反應生成物P。 The top coat film is peeled off from the wafer W by supplying an alkali developing solution. At this time, the reaction product P remaining on the wafer W is also peeled off from the wafer W with the top coat film. Thereby, the reaction product P can be removed from the wafer W.

如此一來，根據第1實施形態之基板處理方法，由於不利用化學性作用就能夠去除反應生成物，因此，可抑制因蝕刻作用等所致之對Cu配線102的損傷。 According to the substrate processing method of the first embodiment, since the reaction product can be removed without using a chemical action, damage to the Cu wiring 102 due to an etching action or the like can be suppressed.

因此，根據第1實施形態之基板處理方法，在乾蝕刻之後或灰化之後，可一邊抑制對晶圓W之損傷，一邊去除殘存於晶圓W上的反應生成物P。另外，面塗層膜，係在成膜於晶圓W之後，不進行圖案曝光，全部從晶圓W被去除。 Therefore, according to the substrate processing method of the first embodiment, after the dry etching or after the ashing, the reaction product P remaining on the wafer W can be removed while suppressing the damage to the wafer W. Further, the top coat film is removed from the wafer W without being subjected to pattern exposure after being formed on the wafer W.

面塗層液，係一邊引起體積收縮，一邊固化 或硬化，而成為面塗層膜。即使藉由當時之因面塗層液之體積收縮所產生的變形(拉伸力)，亦可從晶圓W分離殘存於晶圓W的反應生成物P。 Topcoat liquid, which causes volume shrinkage while curing Or harden to become a topcoat film. The reaction product P remaining on the wafer W can be separated from the wafer W by the deformation (tensile force) caused by the volume shrinkage of the surface coating liquid at that time.

面塗層液，係因藉由揮發成分之揮發及丙烯酸樹脂之硬化收縮，引起體積收縮，因此，相較於僅包含揮發成分之成膜用處理液，體積收縮率大，從而可強力地分離反應生成物P。尤其，丙烯酸樹脂，係因相較於環氧樹脂等之其他樹脂，硬化收縮大，因此，在對反應生成物P賦予拉伸力之觀點上，面塗層液係有效的。 The surface coating liquid is caused by the volatilization of the volatile component and the hardening shrinkage of the acrylic resin, thereby causing volume shrinkage. Therefore, the volumetric shrinkage ratio is large compared to the film forming treatment liquid containing only the volatile component, so that the surface coating solution can be strongly separated. Reaction product P. In particular, since the acrylic resin has a large hardening shrinkage compared to other resins such as an epoxy resin, the top coat liquid is effective from the viewpoint of imparting a tensile force to the reaction product P.

又，面塗層膜，係藉由鹼顯像液而被剝離時膨潤。因此，若根據第1實施形態之基板處理方法，除了面塗層液之揮發所致之體積收縮外，由面塗層膜之膨潤所致之體積膨脹，亦可從晶圓W強力地分離反應生成物P。 Further, the top coat film was swollen when peeled off by the alkali developing solution. Therefore, according to the substrate processing method of the first embodiment, in addition to the volume shrinkage due to volatilization of the top coat liquid, the volume expansion caused by the swelling of the top coat film can be strongly separated from the wafer W. Product P.

又，在第1實施形態中，係藉由使用具有鹼性者作為去除液的方式，以提高反應生成物P之去除效率。 Further, in the first embodiment, the removal efficiency of the reaction product P is improved by using a method having a basic substance as a removal liquid.

藉由供給鹼顯像液之方式，在晶圓W之表面與反應生成物P之表面，係產生相同極性之仄他電位(Zeta potential)。因面塗層液之體積變化從晶圓W分離的反應生成物P，係藉由帶電與晶圓W相同極性之仄他電位，而與晶圓W相斥。藉此，防止反應生成物P再附著於晶圓W。 By supplying an alkali developing solution, a zeta potential of the same polarity is generated on the surface of the wafer W and the surface of the reaction product P. The reaction product P separated from the wafer W due to the volume change of the top coat liquid is charged with the wafer W by charging the potential of the same polarity as the wafer W. Thereby, the reaction product P is prevented from reattaching to the wafer W.

如此一來，利用面塗層液之體積收縮，從晶圓W等分離反應生成物P之後，藉由使相同極性之仄他 電位產生於晶圓W與反應生成物P的方式，由於可防止反應生成物P之再附著，故可提高反應生成物P之去除效率。 In this way, after the reaction product P is separated from the wafer W or the like by the volume shrinkage of the top coating liquid, by making the same polarity Since the potential is generated in the wafer W and the reaction product P, the re-adhesion of the reaction product P can be prevented, so that the removal efficiency of the reaction product P can be improved.

另外，作為鹼顯像液，係只要含有例如氨、氫氧化四甲銨(TMAH：Tetra Methyl Ammonium Hydroxide)、膽鹼水溶液之至少一個即可。 In addition, as the alkali developing solution, at least one of ammonia, tetramethylammonium hydroxide (TMAH: Tetra Methyl Ammonium Hydroxide) and a choline aqueous solution may be contained.

又，根據第1實施形態之基板處理方法，亦容易去除在例如利用物理力之洗淨方法中難以去除之進入導孔106內的反應生成物P。 Further, according to the substrate processing method of the first embodiment, it is easy to remove the reaction product P that has entered the via hole 106, which is difficult to remove, for example, by the physical force cleaning method.

另外，形成於晶圓W上的面塗層膜，最終從晶圓W被全部去除。因此，去除了面塗層膜後的晶圓W，係成為供給面塗層液之前的狀態，亦即成為Cu配線102露出的狀態。 Further, the top coat film formed on the wafer W is finally removed from the wafer W. Therefore, the wafer W from which the top coat film has been removed is in a state before the supply of the top coat liquid, that is, the state in which the Cu wiring 102 is exposed.

<基板處理系統之構成> <Configuration of Substrate Processing System>

接下來，參閱圖2說明執行上述之基板處理方法之基板處理系統的構成。圖2，係表示第1實施形態之基板處理系統之概略構成的圖。 Next, a configuration of a substrate processing system that performs the above-described substrate processing method will be described with reference to FIG. Fig. 2 is a view showing a schematic configuration of a substrate processing system according to the first embodiment.

如圖2所示，第1實施形態之基板處理系統1，係具備有作為前處理裝置的第1處理裝置2與作為後處理裝置的第2處理裝置3。又，基板處理系統1，係具備有第1控制裝置4A與第2控制裝置4B。 As shown in FIG. 2, the substrate processing system 1 of the first embodiment includes a first processing device 2 as a preprocessing device and a second processing device 3 as a post-processing device. Further, the substrate processing system 1 includes a first control device 4A and a second control device 4B.

第1處理裝置2，係對晶圓W進行乾蝕刻或面塗層液的供給。又，第2處理裝置3，係對在第1處理 裝置2所處理的晶圓W，進行鹼顯像液之供給。 The first processing device 2 performs dry etching or supply of the top coat liquid on the wafer W. Further, the second processing device 3 is in the first processing The wafer W processed by the apparatus 2 is supplied with an alkali developing solution.

第1控制裝置4A，係例如為電腦，具備有控制部401與記憶部402。記憶部402，係由例如RAM(Random Access Memory)、ROM(Read Only Memory)、硬碟這樣的記憶裝置所構成，且記憶用以控制在第1處理裝置2所執行之各種處理的程式。控制部401，係例如為CPU(Central Processing Unit)，藉由讀出並執行記憶於記憶部402的程式，加以控制第1處理裝置2的動作。 The first control device 4A is, for example, a computer, and includes a control unit 401 and a storage unit 402. The memory unit 402 is constituted by a memory device such as a RAM (Random Access Memory), a ROM (Read Only Memory), or a hard disk, and stores a program for controlling various processes executed by the first processing device 2. The control unit 401 is, for example, a CPU (Central Processing Unit), and controls the operation of the first processing device 2 by reading and executing a program stored in the storage unit 402.

相同的，第2控制裝置4B，係例如為電腦，具備有控制部403與記憶部404。記憶部404，係由例如RAM、ROM、硬碟這樣的記憶裝置所構成，且記憶用以控制在第2處理裝置3所執行之各種處理的程式。控制部403，係例如為CPU，藉由讀出並執行記憶於記憶部404的程式，加以控制第2處理裝置3的動作。 Similarly, the second control device 4B is, for example, a computer, and includes a control unit 403 and a storage unit 404. The memory unit 404 is constituted by a memory device such as a RAM, a ROM, or a hard disk, and stores a program for controlling various processes executed by the second processing device 3. The control unit 403 is, for example, a CPU, and controls the operation of the second processing device 3 by reading and executing a program stored in the storage unit 404.

另外，該些程式，係亦可為藉由電腦記錄於可讀取之記憶媒體者，亦可為由其記憶媒體安裝於第1控制裝置4A之記憶部402或第2控制裝置4B之記憶部404者。作為藉由電腦進行可讀取之記憶媒體，例如有硬碟(HD)、軟碟片(FD)、光碟(CD)、磁光碟(MO)、記憶卡等。 In addition, the programs may be recorded in a readable memory medium by a computer, or may be installed in the memory unit 402 of the first control device 4A or the memory portion of the second control device 4B by the memory medium. 404 people. As a memory medium readable by a computer, there are, for example, a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like.

<第1處理裝置之構成> <Configuration of First Processing Apparatus>

接下來，參閱圖3說明第1處理裝置2之構成。圖 3，係表示第1處理裝置2之概略構成的圖。另外，在下述中，為了使位置關係明確，而加以規定互相正交的X軸、Y軸及Z軸，並將Z軸正方向設為垂直向上方向。 Next, the configuration of the first processing device 2 will be described with reference to Fig. 3 . Figure 3 is a view showing a schematic configuration of the first processing device 2. In addition, in the following, in order to clarify the positional relationship, the X-axis, the Y-axis, and the Z-axis orthogonal to each other are defined, and the Z-axis positive direction is set to the vertical upward direction.

如圖3所示，第1處理裝置2，係具備搬入搬出站5與處理站6。搬入搬出站5與處理站6，係相鄰而設。 As shown in FIG. 3, the first processing apparatus 2 includes a loading/unloading station 5 and a processing station 6. The loading/unloading station 5 and the processing station 6 are adjacent to each other.

搬入搬出站5，係具備有載置部10與搬送部11。在載置部10，係載置有以水平狀態收容複數片晶圓W的複數個搬送容器(以下，記載為載體C)。 The loading/unloading station 5 includes a placing unit 10 and a conveying unit 11. In the mounting unit 10, a plurality of transfer containers (hereinafter referred to as a carrier C) that accommodate a plurality of wafers W in a horizontal state are placed.

搬送部11，係相鄰於載置部10而設置，且在內部具備有基板搬送裝置111。基板搬送裝置111，係具備有保持晶圓W之晶圓保持機構。又，基板搬送裝置111，係可朝向水平方向及垂直方向移動及以垂直軸為中心旋轉，並使用晶圓保持機構，在載體C與處理站6之間進行晶圓W之搬送。 The conveyance unit 11 is provided adjacent to the placement unit 10 and includes a substrate conveyance device 111 therein. The substrate transfer device 111 is provided with a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 111 is movable in the horizontal direction and the vertical direction and rotated about the vertical axis, and the wafer W is transported between the carrier C and the processing station 6 by using the wafer holding mechanism.

具體而言，基板搬送裝置111，係進行從載置於載置部10之載體C取出晶圓W，並將取出之晶圓W搬入到後述之處理站6之乾蝕刻單元12的處理。又，基板搬送裝置111，係亦進行從後述之處理站6的第1液體處理單元14取出晶圓W，並將取出之晶圓W收容到載置部10之載體C的處理。 Specifically, the substrate transfer apparatus 111 performs a process of taking out the wafer W from the carrier C placed on the mounting unit 10 and carrying the taken wafer W into the dry etching unit 12 of the processing station 6 to be described later. In addition, the substrate transfer apparatus 111 performs a process of taking out the wafer W from the first liquid processing unit 14 of the processing station 6 to be described later, and storing the taken wafer W in the carrier C of the mounting unit 10.

處理站6，係相鄰於搬送部11而設置。處理站6，係具備有乾蝕刻單元12、真空預備室13及第1液體處理單元14。 The processing station 6 is provided adjacent to the transport unit 11. The processing station 6 includes a dry etching unit 12, a vacuum preparation chamber 13, and a first liquid processing unit 14.

乾蝕刻單元12，係相當於前處理部之一例，對藉由基板搬送裝置111搬入的晶圓W進行乾蝕刻處理。藉此，形成導孔106，而晶圓W內部之Cu配線102(參閱圖1A)會露出。 The dry etching unit 12 is an example of a preprocessing unit, and performs dry etching on the wafer W carried in the substrate transfer apparatus 111. Thereby, the via hole 106 is formed, and the Cu wiring 102 (see FIG. 1A) inside the wafer W is exposed.

另外，乾蝕刻處理，係於減壓狀態下進行。又，乾蝕刻單元12，係在乾蝕刻處理之後，存在有進行去除不要之光阻劑之灰化處理的情形。 Further, the dry etching treatment is carried out under reduced pressure. Further, in the dry etching unit 12, after the dry etching treatment, there is a case where the ashing treatment for removing the unnecessary photoresist is performed.

真空預備室13，係構成為可在大氣壓狀態與減壓狀態切換內部之壓力。在真空預備室13之內部，係設有未圖示之基板搬送裝置。結束乾蝕刻單元12之處理的晶圓W，係藉由真空預備室13之未圖示的基板搬送裝置，從乾蝕刻單元12被搬出，而搬入到第1液體處理單元14。 The vacuum preparation chamber 13 is configured to be capable of switching the internal pressure in an atmospheric pressure state and a reduced pressure state. Inside the vacuum preparation chamber 13, a substrate transfer device (not shown) is provided. The wafer W that has been subjected to the processing of the dry etching unit 12 is carried out from the dry etching unit 12 by a substrate transfer device (not shown) of the vacuum preparation chamber 13, and is carried into the first liquid processing unit 14.

具體而言，真空預備室13之內部，係直至從乾蝕刻單元12搬出晶圓W為止，被保持為減壓狀態，在結束搬出之後，供給氮或氬等之惰性氣體，而切換為大氣壓狀態。且，在切換成大氣壓狀態之後，真空預備室13之未圖示的基板搬送裝置會將晶圓W搬入到第1液體處理單元14。 Specifically, the inside of the vacuum preparation chamber 13 is kept in a reduced pressure state until the wafer W is carried out from the dry etching unit 12, and after the completion of the unloading, an inert gas such as nitrogen or argon is supplied to be switched to the atmospheric pressure state. . Then, after switching to the atmospheric pressure state, the substrate transfer device (not shown) of the vacuum preparation chamber 13 carries the wafer W into the first liquid processing unit 14.

如此一來，由於晶圓W，係從乾蝕刻單元12被搬出起至搬入到第1液體處理單元14的期間，被外氣遮斷，因此，可防止露出之Cu配線102氧化。 In this manner, the wafer W is blocked by the outside air from the time when the dry etching unit 12 is carried out until it is carried into the first liquid processing unit 14, so that the exposed Cu wiring 102 can be prevented from being oxidized.

接著，第1液體處理單元14，係進行將面塗層液供給至晶圓W的成膜用處理液供給處理。如上述， 被供給至晶圓W的面塗層液，係一邊引起體積收縮一邊固化或硬化，形成為面塗層膜。藉此，露出之Cu配線102，係形成為被面塗層膜覆蓋的狀態。 Next, the first liquid processing unit 14 performs a film forming process liquid supply process for supplying the top coat liquid to the wafer W. As above, The top coat liquid supplied to the wafer W is cured or cured while causing volume shrinkage to form a top coat film. Thereby, the exposed Cu wiring 102 is formed in a state of being covered by the top coat film.

成膜用處理液供給處理後的晶圓W，係藉由基板搬送裝置111被收容到載體C，然後，被搬送到第2處理裝置3。 The wafer W after the film forming processing liquid supply processing is stored in the carrier C by the substrate transfer device 111, and then transferred to the second processing device 3.

<第2處理裝置之構成> <Configuration of Second Processing Apparatus>

接下來，參閱圖4說明第2處理裝置3之構成。圖4，係表示第2處理裝置3之概略構成的圖。 Next, the configuration of the second processing device 3 will be described with reference to Fig. 4 . FIG. 4 is a view showing a schematic configuration of the second processing device 3.

如圖4所示，第2處理裝置3，係具備搬入搬出站7與處理站8。搬入搬出站7與處理站8，係相鄰而設。 As shown in FIG. 4, the second processing apparatus 3 includes a loading/unloading station 7 and a processing station 8. The loading/unloading station 7 and the processing station 8 are adjacent to each other.

搬入搬出站7，係具備有載置部16與搬送部17。在載置部16，係載置有複數個載體C。 The loading/unloading station 7 includes a placing unit 16 and a conveying unit 17. A plurality of carriers C are placed on the mounting portion 16.

搬送部17，係相鄰於載置部16而設置，在內部具備有基板搬送裝置171與收授部172。基板搬送裝置171，係具備有保持晶圓W之晶圓保持機構。又，基板搬送裝置171，係可朝向水平方向及垂直方向移動及以垂直軸為中心旋轉，並使用晶圓保持機構，在載體C與收授部172之間進行晶圓W之搬送。 The conveyance unit 17 is provided adjacent to the placement unit 16 and includes a substrate conveyance device 171 and a reception unit 172 therein. The substrate transfer device 171 is provided with a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 171 is movable in the horizontal direction and the vertical direction and rotates around the vertical axis, and the wafer W is transported between the carrier C and the receiving unit 172 by using the wafer holding mechanism.

處理站8，係相鄰於搬送部17而設置。處理站8，係具備有搬送部18與複數個第2液體處理單元19。複數個第2液體處理單元19，係排列設置於搬送部 18之兩側。 The processing station 8 is provided adjacent to the transport unit 17. The processing station 8 includes a transport unit 18 and a plurality of second liquid processing units 19. A plurality of second liquid processing units 19 are arranged in the transport unit On both sides of the 18th.

搬送部18，係在內部具備有基板搬送裝置181。基板搬送裝置181，係具備有保持晶圓W之晶圓保持機構。又，基板搬送裝置181，係可朝向水平方向及垂直方向移動及以垂直軸為中心旋轉，並使用晶圓保持機構，在收授部172與第2液體處理單元19之間進行晶圓W之搬送。 The conveyance unit 18 is provided with a substrate conveyance device 181 therein. The substrate transfer device 181 is provided with a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 181 is movable in the horizontal direction and the vertical direction and is rotated around the vertical axis, and the wafer holding mechanism is used to perform the wafer W between the receiving portion 172 and the second liquid processing unit 19. Transfer.

在第2處理裝置3中，搬入搬出站7之基板搬送裝置171，係從載體C取出在第1處理裝置2所處理的晶圓W，並將取出的晶圓W載置於收授部172。載置於收授部172的晶圓W，係藉由處理站8之基板搬送裝置181，從收授部172被取出，並被搬入到第2液體處理單元19。 In the second processing apparatus 3, the substrate transfer apparatus 171 carried in the carry-out station 7 takes out the wafer W processed by the first processing apparatus 2 from the carrier C, and mounts the taken wafer W on the receiving unit 172. . The wafer W placed on the receiving unit 172 is taken out from the receiving unit 172 by the substrate transfer device 181 of the processing station 8, and is carried into the second liquid processing unit 19.

在第2液體處理單元19中，對晶圓W進行供給鹼顯像液而去除面塗層膜的處理等。藉此，伴隨著面塗層膜之剝離，去除殘存於晶圓W上的反應生成物P。又，在第2液體處理單元19中，係亦對去除了面塗層膜之晶圓W，進行藥液之洗淨。在此，係使用DHF(稀氫氟酸)作為藥液。 In the second liquid processing unit 19, the wafer W is supplied with an alkali developing solution to remove the top coat film. Thereby, the reaction product P remaining on the wafer W is removed accompanying the peeling of the top coat film. Further, in the second liquid processing unit 19, the wafer W from which the top coat film has been removed is also washed with the chemical liquid. Here, DHF (diluted hydrofluoric acid) is used as a chemical solution.

然後，晶圓W，係藉由基板搬送裝置181，從第2液體處理單元19被搬出，並載置於收授部172。且，載置於收授部172之處理完畢的晶圓W，係藉由基板搬送裝置171返回到載置部16之載體C。 Then, the wafer W is carried out from the second liquid processing unit 19 by the substrate transfer device 181, and placed on the receiving unit 172. The processed wafer W placed on the receiving unit 172 is returned to the carrier C of the placing unit 16 by the substrate transfer device 171.

<乾蝕刻單元之構成> <Composition of dry etching unit>

接下來，說明上述之第1處理裝置2及第2處理裝置3所具備之各單元的構成。首先，參閱圖5，說明第1處理裝置2所具備之乾蝕刻單元12的構成。圖5，係表示乾蝕刻單元12之構成之一例的示意圖。 Next, the configuration of each unit included in the first processing device 2 and the second processing device 3 described above will be described. First, the configuration of the dry etching unit 12 included in the first processing apparatus 2 will be described with reference to Fig. 5 . FIG. 5 is a schematic view showing an example of the configuration of the dry etching unit 12.

如圖5所示，乾蝕刻單元12，係具備有收容晶圓W之密閉構造的腔室201，在腔室201內，係設有以水平狀態載置晶圓W的載置台202。載置台202，係具備有用以冷卻或加熱晶圓W，從而調節成預定溫度的溫度調整機構203。在腔室201之側壁，係設有用於在與真空預備室13之間搬入搬出晶圓W的搬入搬出口(未圖示)。 As shown in FIG. 5, the dry etching unit 12 is provided with a chamber 201 having a hermetic structure for accommodating the wafer W, and a mounting table 202 for placing the wafer W in a horizontal state is provided in the chamber 201. The stage 202 is provided with a temperature adjustment mechanism 203 for cooling or heating the wafer W to be adjusted to a predetermined temperature. A loading/unloading port (not shown) for loading and unloading the wafer W between the vacuum chambers 13 is provided on the side wall of the chamber 201.

在腔室201之頂部，係設有噴頭204。在噴頭204，係連接有氣體供給管205。在該氣體供給管205，係經由閥206連接有蝕刻氣體供給源207，且從蝕刻氣體供給源207對噴頭204供給預定的蝕刻氣體。噴頭204，係將從蝕刻氣體供給源207所供給之蝕刻氣體供給到腔室201內。 At the top of the chamber 201, a showerhead 204 is provided. A gas supply pipe 205 is connected to the shower head 204. In the gas supply pipe 205, an etching gas supply source 207 is connected via a valve 206, and a predetermined etching gas is supplied from the etching gas supply source 207 to the shower head 204. The shower head 204 supplies the etching gas supplied from the etching gas supply source 207 into the chamber 201.

另外，從蝕刻氣體供給源207所供給之蝕刻氣體，係例如為CH3F氣體、CH2F2氣體、CF4氣體、O2氣體、Ar氣體源等。 Further, the etching gas supplied from the etching gas supply source 207 is, for example, CH 3 F gas, CH 2 F 2 gas, CF 4 gas, O 2 gas, Ar gas source or the like.

在腔室201之底部，係經由排氣管線208連接有排氣裝置209。腔室201之內部的壓力，係藉由該排氣裝置209被維持為減壓狀態。 At the bottom of the chamber 201, an exhaust device 209 is connected via an exhaust line 208. The pressure inside the chamber 201 is maintained in a reduced pressure state by the exhaust device 209.

乾蝕刻單元12，係構成為如上述，在使用排 氣裝置209對腔室201之內部進行減壓的狀態下，從噴頭204將蝕刻氣體供給至腔室201內，藉此，對載置於載置台202的晶圓W進行乾蝕刻。藉此，在晶圓W形成有導孔106(參閱圖1A)，形成為Cu配線102露出的狀態。 The dry etching unit 12 is configured as described above, in the use row When the gas device 209 decompresses the inside of the chamber 201, the etching gas is supplied from the head 204 into the chamber 201, whereby the wafer W placed on the mounting table 202 is dry etched. Thereby, the via hole 106 (see FIG. 1A) is formed in the wafer W, and the Cu wiring 102 is exposed.

又，在乾蝕刻單元12中，係例如存在有以將光阻膜作為遮罩而對層間絕緣膜104(參閱圖1A)進行乾蝕刻之後，進行用於去除光阻膜之灰化處理的情形。 Further, in the dry etching unit 12, for example, there is a case where the ashing treatment for removing the photoresist film is performed after dry etching the interlayer insulating film 104 (see FIG. 1A) with the photoresist film as a mask. .

<第1液體處理單元之構成> <Configuration of the first liquid processing unit>

接下來，參閱圖6，說明第1處理裝置2所具備之第1液體處理單元14的構成。圖6，係表示第1液體處理單元14之構成之一例的示意圖。 Next, the configuration of the first liquid processing unit 14 included in the first processing device 2 will be described with reference to Fig. 6 . FIG. 6 is a schematic view showing an example of the configuration of the first liquid processing unit 14.

如圖6所示，第1液體處理單元14，係具備有腔室20、基板保持機構30、液體供給部40_1、40_2及回收杯體50。 As shown in FIG. 6, the first liquid processing unit 14 includes a chamber 20, a substrate holding mechanism 30, liquid supply units 40_1 and 40_2, and a recovery cup 50.

腔室20，係收容有基板保持機構30與液體供給部40_1、40_2與回收杯體50。在腔室20之頂部，係設有FFU(Fan Filter Unit)21。FFU21，係在腔室20內形成降流。 The chamber 20 houses the substrate holding mechanism 30 and the liquid supply portions 40_1 and 40_2 and the recovery cup 50. At the top of the chamber 20, an FFU (Fan Filter Unit) 21 is provided. The FFU 21 forms a downflow within the chamber 20.

在FFU21，係經由閥22連接有惰性氣體供給源23。FFU21，係將從惰性氣體供給源23所供給之N2氣體等的惰性氣體吐出至腔室20內。如此一來，藉由使用惰性氣體作為降流氣體的方式，可防止露出之Cu配線102(參閱圖1A)氧化的情形。 In the FFU 21, an inert gas supply source 23 is connected via a valve 22. The FFU 21 discharges an inert gas such as N 2 gas supplied from the inert gas supply source 23 into the chamber 20. In this way, by using an inert gas as a downflow gas, it is possible to prevent the exposed Cu wiring 102 (see FIG. 1A) from being oxidized.

基板保持機構30，係具備有：旋轉保持部31，可旋轉地保持晶圓W；及流體供給部32，***通於旋轉保持部31之中空部314，並將氣體供給至晶圓W之下面。 The substrate holding mechanism 30 includes a rotation holding portion 31 that rotatably holds the wafer W, and a fluid supply portion 32 that is inserted into the hollow portion 314 of the rotation holding portion 31 and supplies the gas to the wafer W. below.

旋轉保持部31，係設於腔室20的大致中央。在該旋轉保持部31之上面，係設有從側面保持晶圓W的保持構件311。晶圓W，係藉由該保持構件311，在僅從旋轉保持部31之上面些許離開的狀態下，被水平保持。 The rotation holding portion 31 is provided substantially at the center of the chamber 20. A holding member 311 that holds the wafer W from the side surface is provided on the upper surface of the rotation holding portion 31. The wafer W is horizontally held by the holding member 311 in a state of being slightly separated only from the upper surface of the rotation holding portion 31.

又，旋轉保持部31係具備有驅動機構312，該驅動機構312係由馬達或將馬達之旋轉傳達至旋轉保持部31的皮帶等所構成。旋轉保持部31，係藉由該驅動機構312，繞著垂直軸旋轉。且，藉由旋轉保持部31旋轉的方式，被保持於旋轉保持部31之晶圓W係與旋轉保持部31一體旋轉。另外，旋轉保持部31，係經由軸承313而可旋轉地支撐於腔室20及回收杯體50。 Further, the rotation holding unit 31 is provided with a drive mechanism 312 which is constituted by a motor or a belt that transmits the rotation of the motor to the rotation holding unit 31. The rotation holding portion 31 is rotated about the vertical axis by the drive mechanism 312. Further, the wafer W held by the rotation holding portion 31 is rotated integrally with the rotation holding portion 31 by the rotation of the rotation holding portion 31. Further, the rotation holding portion 31 is rotatably supported by the chamber 20 and the recovery cup 50 via the bearing 313.

流體供給部32係插通於中空部314，該中空部314係形成於旋轉保持部31的中央。在流體供給部32之內部係形成有流路321，在該流路321係經由閥33連接有N2供給源34。流體供給部32，係經由閥33及流路321，將從N2供給源34所供給的N2氣體供給至晶圓W之下面。 The fluid supply unit 32 is inserted into the hollow portion 314 which is formed at the center of the rotation holding portion 31. A flow path 321 is formed inside the fluid supply unit 32, and an N 2 supply source 34 is connected to the flow path 321 via a valve 33. The fluid supply unit 32 supplies the N 2 gas supplied from the N 2 supply source 34 to the lower surface of the wafer W via the valve 33 and the flow path 321 .

經由閥33而供給之N2氣體，係高溫(例如，90℃左右)的N2氣體，使用於後述之揮發促進處理。 The N 2 gas supplied through the valve 33 is a high-temperature (for example, about 90 ° C) N 2 gas, and is used in a volatilization promoting treatment to be described later.

基板保持機構30，係於從真空預備室13之未圖示的基板搬送裝置接收晶圓W的情況，使用未圖示之升降機構而使流體供給部32上升的狀態下，使晶圓W載置於未圖示之支撐銷(該支撐銷係設於流體供給部32之上面)上。之後，基板保持機構30，係在使流體供給部32下降至預定位置之後，將晶圓W轉交至旋轉保持部31之保持構件311。又，基板保持機構30，係於將處理完畢之晶圓W轉交至基板搬送裝置111的情況下，使用未圖示之升降機構而使流體供給部32上升，使藉由保持構件311所保持的晶圓W載置於未圖示之支撐銷上。且，基板保持機構30，係將載置於未圖示之支撐銷上的晶圓W轉交至基板搬運裝置111。 In the substrate holding mechanism 30, when the wafer W is received from the substrate transfer device (not shown) of the vacuum preparation chamber 13, the wafer W is carried in a state where the fluid supply unit 32 is raised by using a lifting mechanism (not shown). It is placed on a support pin (the support pin is provided on the upper side of the fluid supply unit 32) (not shown). Thereafter, the substrate holding mechanism 30 transfers the wafer W to the holding member 311 of the rotation holding portion 31 after the fluid supply portion 32 is lowered to a predetermined position. Further, when the processed wafer W is transferred to the substrate transfer device 111, the substrate holding mechanism 30 raises the fluid supply unit 32 by the elevating mechanism (not shown) to be held by the holding member 311. The wafer W is placed on a support pin (not shown). Further, the substrate holding mechanism 30 transfers the wafer W placed on the support pin (not shown) to the substrate transfer device 111.

液體供給部40_1，係具備有噴嘴41a~41c、支臂42及旋轉升降機構43。 The liquid supply unit 40_1 includes nozzles 41a to 41c, an arm 42 and a rotation elevating mechanism 43.

在噴嘴41a係經由閥44a連接有DHF供給源45a，在噴嘴41a係經由閥44b連接有DIW供給源45b，在噴嘴41c係經由閥44c連接有IPA供給源45c。另外，從噴嘴41a所供給之DHF，係被稀釋為不使Cu配線102腐蝕之程度之濃度的稀氫氟酸。又，支臂42係水平地支撐噴嘴41a~41c，旋轉升降機構43係使支臂42旋轉及升降。 The nozzle 41a is connected to the DHF supply source 45a via the valve 44a, the nozzle 41a is connected to the DIW supply source 45b via the valve 44b, and the nozzle 41c is connected to the IPA supply source 45c via the valve 44c. Further, the DHF supplied from the nozzle 41a is diluted to a concentration of dilute hydrofluoric acid to such an extent that the Cu wiring 102 is not corroded. Further, the arm 42 supports the nozzles 41a to 41c horizontally, and the rotation elevating mechanism 43 rotates and raises and lowers the arm 42.

該液體供給部40_1，係對晶圓W從噴嘴41a供給預定藥液(在此，係DHF)，從噴嘴41b供給屬於沖洗液之一種的DIW(純水)，從噴嘴41c供給屬於乾燥溶 媒之一種的IPA(異丙醇)。 The liquid supply unit 40_1 supplies a predetermined chemical liquid (here, DHF) to the wafer W from the nozzle 41a, and supplies DIW (pure water) belonging to one of the rinse liquids from the nozzle 41b, and supplies the dry solution from the nozzle 41c. IPA (isopropanol) of one of the media.

又，液體供給部40_2，係具備有：噴嘴41d、41e；支臂42，水平地支撐噴嘴41d、41e；及旋轉升降機構43，使臂部42旋轉及升降。在噴嘴41d係經由閥44d連接有MIBC供給源45d，在噴嘴41e係經由閥44e連接有面塗層液供給源45e。 Further, the liquid supply unit 40_2 includes nozzles 41d and 41e, an arm 42 that horizontally supports the nozzles 41d and 41e, and a rotation elevating mechanism 43 that rotates and raises and lowers the arm unit 42. The nozzle 41d is connected to the MIBC supply source 45d via the valve 44d, and the nozzle 41e is connected to the top coat liquid supply source 45e via the valve 44e.

該液體供給部40_2，係對晶圓W，從噴嘴41d供給MIBC(4-甲基-2-戊醇)以作為與面塗層液具有親和性之溶劑，並從噴嘴41e供給面塗層液。 The liquid supply unit 40_2 supplies the MIBC (4-methyl-2-pentanol) from the nozzle 41d to the wafer W as a solvent having affinity with the top coat liquid, and supplies the top coat liquid from the nozzle 41e. .

MIBC在面塗層液中亦含有，與面塗層液具有親和性。另外，作為MIBC以外之與面塗層液具有親和性的溶劑，亦可使用例如PGME(丙二醇單甲醚)、PGMEA(丙二醇單甲基醚醋酸酯)等。 MIBC is also included in the topcoat liquid and has an affinity for the topcoat liquid. Further, as a solvent having affinity with the top coat liquid other than MIBC, for example, PGME (propylene glycol monomethyl ether) or PGMEA (propylene glycol monomethyl ether acetate) may be used.

另外，在此，雖係按處理液設置專用之噴嘴41a~41e，但亦可以複數之處理液共用噴嘴。但是，當噴嘴共用化時，於例如不想使處理液彼此混合之情況等，必須有暫時排出殘存於噴嘴或配管之處理液的工程，因而造成處理液被浪費。對此，若設置專用之噴嘴41a~41e時，如上述因不需有排出處理液的工程，故不會浪費處理液。 Here, although the nozzles 41a to 41e dedicated to the treatment liquid are provided, the plurality of treatment liquids may share the nozzles. However, when the nozzles are shared, for example, when it is not desired to mix the treatment liquids, it is necessary to temporarily discharge the treatment liquid remaining in the nozzles or the pipes, and the treatment liquid is wasted. On the other hand, when the dedicated nozzles 41a to 41e are provided, since the above-described process of discharging the treatment liquid is not required, the treatment liquid is not wasted.

回收杯體50，係配置成包圍旋轉保持部31，捕捉因旋轉保持部31之旋轉而從晶圓W飛散的處理液。在回收杯體50之底部係形成排液口51，被回收杯體50捕捉之處理液係從該排液口51排出到第1液體處理單元14之外部。又，在回收杯體50之底部係形成有排氣口 52，該排氣口52係將藉由流體供給部32所供給的N2氣體或從FFU21所供給的惰性氣體排出到第1液體處理單元14之外部。 The recovery cup 50 is disposed so as to surround the rotation holding portion 31 and capture the processing liquid scattered from the wafer W by the rotation of the rotation holding portion 31. A liquid discharge port 51 is formed at the bottom of the recovery cup 50, and the treatment liquid captured by the recovery cup 50 is discharged from the liquid discharge port 51 to the outside of the first liquid processing unit 14. Further, an exhaust port is formed at the bottom of the recovery cup 50 In the exhaust port 52, the N2 gas supplied from the fluid supply unit 32 or the inert gas supplied from the FFU 21 is discharged to the outside of the first liquid processing unit 14.

<第2液體處理單元之構成> <Configuration of Second Liquid Processing Unit>

接下來，參閱圖7，說明第2處理裝置3所具備之第2液體處理單元19的構成。圖7，係表示第2液體處理單元19之構成之一例的示意圖。 Next, the configuration of the second liquid processing unit 19 included in the second processing device 3 will be described with reference to Fig. 7 . FIG. 7 is a schematic view showing an example of the configuration of the second liquid processing unit 19.

如圖7所示，第2液體處理單元19，係在腔室60內具備有基板保持機構70、液體供給部80及回收杯體90。 As shown in FIG. 7, the second liquid processing unit 19 includes a substrate holding mechanism 70, a liquid supply unit 80, and a recovery cup 90 in the chamber 60.

基板保持機構70，係具備有旋轉保持部71、支柱部72及驅動部73。旋轉保持部71，係設於腔室60的大致中央。在該旋轉保持部71之上面，係設有從側面保持晶圓W的保持構件711。晶圓W，係藉由該保持構件711，在僅從旋轉保持部71之上面些許離開的狀態下，被水平保持。支柱部72係延伸於垂直方向的構件，基端部係藉由驅動部73可旋轉地支撐，在前端部水平地支撐旋轉保持部71。驅動部73，係使支柱部72繞著垂直軸旋轉。 The substrate holding mechanism 70 includes a rotation holding portion 71, a pillar portion 72, and a driving portion 73. The rotation holding portion 71 is provided substantially at the center of the chamber 60. A holding member 711 that holds the wafer W from the side surface is provided on the upper surface of the rotation holding portion 71. The wafer W is horizontally held by the holding member 711 in a state of being slightly separated only from the upper surface of the rotation holding portion 71. The pillar portion 72 is a member extending in the vertical direction, and the base end portion is rotatably supported by the driving portion 73, and the rotation holding portion 71 is horizontally supported at the front end portion. The drive unit 73 rotates the column portion 72 about the vertical axis.

該基板保持機構70，係藉由使用驅動部73使支柱部72旋轉的方式，使支撐於支柱部72之旋轉保持部71旋轉，藉此，使保持於旋轉保持部71的晶圓W旋轉。 In the substrate holding mechanism 70, the rotation holding portion 71 supported by the column portion 72 is rotated by the rotation of the column portion 72 by the driving portion 73, whereby the wafer W held by the rotation holding portion 71 is rotated.

液體供給部80，係具備有噴嘴81a~81c、支 臂82及旋轉升降機構83。 The liquid supply unit 80 is provided with nozzles 81a to 81c and branches. The arm 82 and the rotary lifting mechanism 83.

在噴嘴81a，係經由閥84a連接有DHF供給源85a，在噴嘴81b係經由閥84b連接有鹼顯像液供給源85b，在噴嘴81c係經由閥84c連接有DIW供給源85c。支臂82，係水平地支撐噴嘴81a~81c。旋轉升降機構83，係使支臂82旋轉及升降。 The nozzle 81a is connected to the DHF supply source 85a via a valve 84a, the nozzle 81b is connected to the alkali developing solution supply source 85b via a valve 84b, and the nozzle 81c is connected to the DIW supply source 85c via a valve 84c. The arm 82 supports the nozzles 81a to 81c horizontally. The rotation elevating mechanism 83 rotates and raises the arm 82.

該液體供給部80，係對晶圓W，從噴嘴81a供給屬於預定藥液之DHF，從噴嘴81b供給屬於去除面塗層膜之去除液的鹼顯像液，從噴嘴81c供給屬於沖洗液之DIW。 The liquid supply unit 80 supplies the DHF belonging to the predetermined chemical solution from the nozzle 81a to the wafer W, and supplies the alkali developing liquid belonging to the removal liquid of the topcoat film from the nozzle 81b, and supplies the cleaning liquid from the nozzle 81c. DIW.

在噴嘴81b所供給之鹼顯像液中，係含有防止Cu配線102腐蝕的防腐蝕劑。藉此，在後述之去除液供給處理中，可一邊抑制對Cu配線102之損傷，一邊去除面塗層膜。又，從噴嘴81a所供給之DHF，係被稀釋為不使Cu配線102腐蝕之程度的濃度。 The alkali developing solution supplied from the nozzle 81b contains an anticorrosive agent for preventing corrosion of the Cu wiring 102. Thereby, in the removal liquid supply process mentioned later, the top coat film can be removed while suppressing damage to the Cu wiring 102. Moreover, the DHF supplied from the nozzle 81a is diluted to a concentration that does not cause the Cu wiring 102 to corrode.

回收杯體90，係為了防止處理液飛散至周圍，而配置為包圍旋轉保持部71。在回收杯體90之底部係形成排液口91，被回收杯體90捕捉之處理液係從該排液口91排出至第2液體處理單元19之外部。 The recovery cup 90 is disposed to surround the rotation holding portion 71 in order to prevent the treatment liquid from scattering to the surroundings. A liquid discharge port 91 is formed at the bottom of the recovery cup body 90, and the treatment liquid captured by the recovery cup body 90 is discharged from the liquid discharge port 91 to the outside of the second liquid processing unit 19.

如此一來，第1實施形態之第2液體處理單元19，係相當於從晶圓W去除面塗層膜的去除部及對去除了面塗層膜之晶圓W進行預定之後處理之後處理部的一例。 In this manner, the second liquid processing unit 19 of the first embodiment corresponds to the removal portion of the top coat film removed from the wafer W and the processing of the wafer W from which the top coat film has been removed. An example.

<基板處理系統之具體動作> <Specific actions of the substrate processing system>

接下來，參閱圖8，說明基板處理系統1的具體動作。圖8，係表示第1實施形態之基板處理之處理步驟的流程圖。另外，圖8所示之各處理步驟，係根據第1控制裝置4A或第2控制裝置4B之控制來予以進行。 Next, a specific operation of the substrate processing system 1 will be described with reference to FIG. 8. Fig. 8 is a flow chart showing the processing procedure of the substrate processing in the first embodiment. The processing steps shown in FIG. 8 are performed based on the control of the first control device 4A or the second control device 4B.

第1實施形態之基板處理系統1，係在第1處理裝置2進行從圖8所示之乾蝕刻處理(步驟S101)至第1搬出處理(步驟S107)的處理，在第2處理裝置3進行從去除液供給處理(步驟S108)至第2搬出處理(步驟S110)的處理。 In the substrate processing system 1 of the first embodiment, the first processing device 2 performs the processes from the dry etching process (step S101) to the first carry-out process (step S107) shown in FIG. 8, and performs the process in the second processing device 3. The process from the removal liquid supply process (step S108) to the second carry-out process (step S110).

如圖8所示，首先，在乾蝕刻單元12進行乾蝕刻處理(步驟S101)。在該乾蝕刻處理中，係乾蝕刻單元12對晶圓W進行乾蝕刻或灰化。藉此，設於晶圓W之內部的Cu配線102會露出(參閱圖1A)。 As shown in FIG. 8, first, dry etching processing is performed in the dry etching unit 12 (step S101). In the dry etching process, the dry etching unit 12 dry-etches or ashes the wafer W. Thereby, the Cu wiring 102 provided inside the wafer W is exposed (refer to FIG. 1A).

接著，晶圓W，係被搬入到第1液體處理單元14。由於該搬入處理係經由真空預備室13來進行，故可防止露出之Cu配線102氧化。 Next, the wafer W is carried into the first liquid processing unit 14. Since the carry-in processing is performed via the vacuum preparation chamber 13, it is possible to prevent the exposed Cu wiring 102 from being oxidized.

接著，在第1液體處理單元14進行藥液處理(步驟S102)。在該藥液處理中，液體供給部40_1(參閱圖6)之噴嘴41a係位於晶圓W的中央上方。然後，從噴嘴41a對晶圓W供給DHF。被供給至晶圓W之DHF，係藉由隨著晶圓W之旋轉的離心力，擴展至晶圓W之主面。 Next, the first liquid processing unit 14 performs chemical liquid processing (step S102). In the chemical processing, the nozzle 41a of the liquid supply unit 40_1 (see FIG. 6) is located above the center of the wafer W. Then, DHF is supplied to the wafer W from the nozzle 41a. The DHF supplied to the wafer W is extended to the main surface of the wafer W by the centrifugal force of the rotation of the wafer W.

藉此，Cu配線102或反應生成物P之表面， 係藉由DHF稍微溶解，反應生成物P之附著力變弱。因此，可形成為容易去除反應生成物P之狀態。 Thereby, the surface of the Cu wiring 102 or the reaction product P, The DHF is slightly dissolved, and the adhesion of the reaction product P becomes weak. Therefore, it is possible to form a state in which the reaction product P is easily removed.

在此，步驟S102之藥液處理，係以容易去除反應生成物P之目的來予以進行者，以不會完全去除反應生成物P之程度的低蝕刻條件來進行。低蝕刻條件，係指例如以比完全去除反應生成物P之所需之蝕刻時間更短的時間，或是，比完全去除反應生成物P之所需之DHF濃度更低的DHF濃度，進行蝕刻的條件。 Here, the chemical liquid treatment in the step S102 is performed for the purpose of easily removing the reaction product P, and is performed under low etching conditions to the extent that the reaction product P is not completely removed. The low etching condition means, for example, a time shorter than an etching time required to completely remove the reaction product P, or a lower DHF concentration than a DHF concentration required to completely remove the reaction product P, and etching is performed. conditions of.

因此，如以往，相較於僅以DHF去除反應生成物P之情況，可一邊抑制對Cu配線102之損傷，一邊更有效果地進行反應生成物P之去除。又，在第1實施形態中，由於從噴嘴41a所供給之DHF係被稀釋為不使Cu配線102腐蝕之程度的濃度，故可更確實地抑制對Cu配線102之損傷。 Therefore, as in the case where the reaction product P is removed by the DHF, the reaction product P can be removed more effectively while suppressing the damage to the Cu wiring 102. In addition, in the first embodiment, the DHF supplied from the nozzle 41a is diluted to a concentration that does not corrode the Cu wiring 102. Therefore, damage to the Cu wiring 102 can be more reliably suppressed.

在藥液處理中，係容易去除粒徑比較小的反應生成物P，在使用了後述之面塗層液及鹼去除液之反應生成物P的去除中，係容易去除粒徑比較大的反應生成物P。因此，藉由組合該些處理的方式，可更有效果地去除反應生成物P。 In the chemical treatment, it is easy to remove the reaction product P having a relatively small particle diameter, and it is easy to remove the reaction having a relatively large particle diameter in the removal of the reaction product P using the surface coating liquid and the alkali removal liquid to be described later. Product P. Therefore, by combining these treatments, the reaction product P can be removed more effectively.

另外，從噴嘴41a供給的藥液並不限於DHF，例如亦可為氟化氨、鹽酸、硫酸、過氧化氫水、磷酸、乙酸、硝酸、氫氧化銨、有機酸或包含氟化氨的水溶液等。 Further, the chemical liquid supplied from the nozzle 41a is not limited to DHF, and may be, for example, ammonia fluoride, hydrochloric acid, sulfuric acid, hydrogen peroxide water, phosphoric acid, acetic acid, nitric acid, ammonium hydroxide, an organic acid or an aqueous solution containing ammonium fluoride. Wait.

接下來，在第1液體處理單元14中，係進行 以DIW沖洗晶圓W之主面的沖洗處理(步驟S103)。在該沖洗處理中，噴嘴41b(參閱圖6)係位於晶圓W的中央上方。然後，藉由將閥44b開放一預定時間的方式，從噴嘴41b將DIW供給至旋轉之晶圓W的主面，沖洗殘存於晶圓W上的DHF。 Next, in the first liquid processing unit 14, the system performs The rinsing process of the main surface of the wafer W is washed by DIW (step S103). In this rinsing process, the nozzle 41b (see FIG. 6) is located above the center of the wafer W. Then, DIW is supplied from the nozzle 41b to the main surface of the rotating wafer W by opening the valve 44b for a predetermined time, and the DHF remaining on the wafer W is washed.

接下來，在第1液體處理單元14中進行置換處理(步驟S104)。在該置換處理中，噴嘴41c(參閱圖6)係位於晶圓W的中央上方。然後，藉由將閥44c開放一預定時間的方式，從噴嘴41c將IPA供給至旋轉之晶圓W的主面，而晶圓W上的DIW被置換為IPA。然後，於IPA殘存於晶圓W上的狀態下，停止晶圓W之旋轉。當置換處理結束時，液體供給部40_1會朝向晶圓W之外方移動。另外，步驟S102~S104之處理，係不一定要實施。 Next, the replacement processing is performed in the first liquid processing unit 14 (step S104). In this replacement process, the nozzle 41c (see FIG. 6) is located above the center of the wafer W. Then, IPA is supplied from the nozzle 41c to the main surface of the rotating wafer W by opening the valve 44c for a predetermined time, and the DIW on the wafer W is replaced with IPA. Then, in a state where the IPA remains on the wafer W, the rotation of the wafer W is stopped. When the replacement process is completed, the liquid supply unit 40_1 moves toward the outside of the wafer W. Further, the processing of steps S102 to S104 is not necessarily implemented.

接下來，在第1液體處理單元14中進行溶劑供給處理(步驟S105)。溶劑供給處理，係在將屬於成膜用處理液的面塗層液供給至晶圓W之前，將與該面塗層液具有親和性之MIBC供給至晶圓W的處理。 Next, the solvent supply process is performed in the first liquid processing unit 14 (step S105). The solvent supply process is a process of supplying the MIBC having affinity with the top coat liquid to the wafer W before supplying the top coat liquid belonging to the film forming process liquid to the wafer W.

具體而言，液體供給部40_2之噴嘴41d係位於晶圓W之中央上方，然後，從噴嘴41d向晶圓W供給MIBC。被供給至晶圓W之MIBC，係藉由隨著晶圓W之旋轉的離心力，塗佈至晶圓W之主面。 Specifically, the nozzle 41d of the liquid supply unit 40_2 is located above the center of the wafer W, and then the MIBC is supplied from the nozzle 41d to the wafer W. The MIBC supplied to the wafer W is applied to the main surface of the wafer W by the centrifugal force of the rotation of the wafer W.

如此一來，藉由在事前將與面塗層液具有親和性的MIBC塗佈至晶圓W的方式，在後述的成膜用處理液供給處理中，面塗層液會容易擴展至晶圓W，並且亦 容易進入導孔106。因此，可抑制面塗層液之消耗量，並且可更確實地去除進入至導孔106的反應生成物P。 In this way, by applying the MIBC having affinity with the top coat liquid to the wafer W in advance, the surface coating liquid can be easily spread to the wafer in the film forming process liquid supply process to be described later. W, and also Easy access to the pilot hole 106. Therefore, the consumption amount of the top coat liquid can be suppressed, and the reaction product P entering the guide hole 106 can be removed more surely.

MIBC，雖係與面塗層液具有親和性，但對DIW而言，幾乎沒有混合，親和性低。對此，第1液體處理單元14，係在供給MIBC之前，相較於DIW，以與MIBC具有親和性高的IPA來置換DIW。藉此，相較於在沖洗處理(步驟S103)之後，進行溶劑供給處理(步驟S105)的情況，MIBC會變得容易在晶圓W之主面擴展，故可抑制MIBC之消耗量。 Although MIBC has affinity with the topcoat liquid, it has almost no mixing and low affinity for DIW. On the other hand, the first liquid processing unit 14 replaces the DIW with an IPA having a high affinity with the MIBC before the MIBC is supplied. As a result, compared with the case where the solvent supply process (step S105) is performed after the rinsing process (step S103), the MIBC is easily spread on the main surface of the wafer W, so that the consumption of MIBC can be suppressed.

另外，與成膜用處理液具有親和性之溶劑，係不僅成膜用處理液，在亦具有與DIW之親和性的情況下，亦可省略步驟S104之置換處理。 In addition, the solvent having affinity with the film-forming treatment liquid is not only the film-forming treatment liquid, but also has a compatibility with DIW, and the replacement treatment of step S104 may be omitted.

如此一來，在欲以短時間有效地將面塗層膜塗佈至晶圓W之上面的情況等，係進行上述之溶劑供給處理為較佳。另外，在成膜用處理液係具有與IPA之親和性的情況下，係亦可省略步驟S105之溶劑供給處理。 In this case, it is preferable to perform the above-described solvent supply treatment in the case where the top coat film is to be applied to the upper surface of the wafer W in a short time. When the processing liquid for film formation has affinity with IPA, the solvent supply process of step S105 may be omitted.

接下來，在第1液體處理單元14中進行成膜用處理液供給處理(步驟S106)。在該成膜用處理液供給處理中，液體供給部40_2之噴嘴41e係位於晶圓W的中央上方。然後，屬於成膜用處理液的面塗層液，係從噴嘴41e被供給至屬於未形成光阻膜之電路形成面之晶圓W的主面。 Next, the film forming process liquid supply process is performed in the first liquid processing unit 14 (step S106). In the film forming process liquid supply process, the nozzle 41e of the liquid supply unit 40_2 is located above the center of the wafer W. Then, the top coat liquid belonging to the film forming processing liquid is supplied from the nozzle 41e to the main surface of the wafer W belonging to the circuit forming surface on which the photoresist film is not formed.

被供給至晶圓W之面塗層液，係藉由隨著晶圓W之旋轉的離心力，擴展至晶圓W之主面。藉此，在 晶圓W之主面全體形成有面塗層液之液膜(參閱圖1B)。此時，晶圓W之主面，係在步驟S105中，形成為藉由供給至晶圓W上的MIBC使浸濕性提高的狀態。藉此，面塗層液容易擴展至晶圓W之主面，並且亦容易進入導孔106。因此，可刪減面塗層液之使用量，並且可實現處理時間的短縮化。 The top coat liquid supplied to the wafer W is expanded to the main surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. In this way, A liquid film of the top coat liquid is formed on the entire main surface of the wafer W (see FIG. 1B). At this time, the main surface of the wafer W is in a state in which the wettability is improved by the MIBC supplied to the wafer W in step S105. Thereby, the top coat liquid easily spreads to the main surface of the wafer W, and also easily enters the guide hole 106. Therefore, the amount of the top coat liquid can be reduced, and the shrinkage of the treatment time can be achieved.

藉由晶圓W之旋轉，揮發成分會揮發，藉此，面塗層液會固化或硬化。藉此，在晶圓W之主面全體形成有面塗層膜。 By the rotation of the wafer W, the volatile component volatilizes, whereby the topcoat liquid solidifies or hardens. Thereby, a top coat film is formed on the entire main surface of the wafer W.

又，在第1液體處理單元14係進行揮發促進處理。該揮發促進處理，係指促進使在晶圓W之主面全體形成膜之面塗層液所含之揮發成分更加揮發的處理。具體而言，藉由閥33(參閱圖6)開放一預定時間的方式，從流體供給部32供給高溫之N2氣體至旋轉之晶圓W的背面。藉此，與晶圓W同時面塗層液被加熱而促進揮發成分之揮發。 Further, the first liquid processing unit 14 performs a volatilization promoting process. The volatilization promoting treatment is a treatment for promoting volatilization of a volatile component contained in the top coat liquid which forms a film on the entire main surface of the wafer W. Specifically, the high-temperature N 2 gas is supplied from the fluid supply unit 32 to the back surface of the rotating wafer W by opening the valve 33 (see FIG. 6) for a predetermined time. Thereby, the topcoat liquid is heated simultaneously with the wafer W to promote volatilization of the volatile component.

另外，揮發促進處理，係亦可為藉由未圖示之減壓裝置使腔室20內成為減壓狀態的處理，亦可為藉由從FFU21所供給的氣體，使腔室20內之濕度下降的處理。藉由該些處理，亦可促進揮發成分之揮發。 Further, the volatilization promoting treatment may be a treatment in which the inside of the chamber 20 is depressurized by a decompression device (not shown), or the humidity in the chamber 20 may be caused by the gas supplied from the FFU 21. The processing of the decline. By these treatments, volatilization of the volatile components can also be promoted.

又，在此，雖係表示第1液體處理單元14進行揮發促進處理之情形的例子，但揮發促進處理係可省略的。亦即，直至面塗層液自然地固化或硬化為止，亦可使晶圓W在第1液體處理單元14待機。又，亦可使晶圓W 之旋轉停止，或以甩掉面塗層液而晶圓W之主面不會露出之程度的旋轉數，使晶圓W旋轉，藉此，促進面塗層液之揮發。 Here, although the example in which the first liquid processing unit 14 performs the volatilization promoting treatment is described, the volatilization promoting treatment may be omitted. That is, the wafer W may be placed on the first liquid processing unit 14 until the top coating liquid is naturally cured or cured. Also, you can also make the wafer W The rotation is stopped, or the wafer W is rotated by the number of rotations of the surface of the wafer W so as not to be exposed by the surface coating liquid, thereby promoting the volatilization of the top coat liquid.

接下來，在第1液體處理單元14中進行第1搬出處理(步驟S107)。在該第1搬出處理中，基板搬送裝置111係從第1液體處理單元14取出晶圓W，搬送至載置部10，收容到載置於載置部10的載體C。 Next, the first liquid discharge processing unit 14 performs the first carry-out processing (step S107). In the first carrying-out process, the substrate transfer apparatus 111 takes out the wafer W from the first liquid processing unit 14, transports it to the mounting unit 10, and stores it in the carrier C placed on the mounting unit 10.

此時，晶圓W之露出的Cu配線102，係在乾蝕刻之後，以短時間被面塗層膜覆蓋(參閱圖1C)。亦即，由於Cu配線102係形成為被外氣遮斷的狀態，因此，不會受到氧化等的不良影響。 At this time, the exposed Cu wiring 102 of the wafer W is covered with the overcoat film for a short time after dry etching (see FIG. 1C). In other words, since the Cu wiring 102 is formed in a state of being blocked by the outside air, it is not adversely affected by oxidation or the like.

因此，根據第1實施形態之基板處理系統1，由於不需要實施用於遵守從乾蝕刻後至洗淨之Q-time的時間管理，因此，可使生產率提高。 Therefore, according to the substrate processing system 1 of the first embodiment, since it is not necessary to perform time management for complying with the Q-time from dry etching to cleaning, productivity can be improved.

收容於載體C之晶圓W，係從第1處理裝置2被搬送到第2處理裝置3的載置部16。然後，晶圓W，係藉由第2處理裝置3之基板搬送裝置171(參閱圖4)從載體C被取出，經由收授部172、基板搬送裝置181，被搬入到第2液體處理單元19。 The wafer W accommodated in the carrier C is transferred from the first processing apparatus 2 to the placing unit 16 of the second processing apparatus 3. Then, the wafer W is taken out from the carrier C by the substrate transfer device 171 (see FIG. 4) of the second processing device 3, and is carried into the second liquid processing unit 19 via the receiving unit 172 and the substrate transfer device 181. .

在第2液體處理單元19中進行去除液供給處理(步驟S108)。在該去除液供給處理中，噴嘴81b(參閱圖7)係位於晶圓W的中央上方。然後，藉由將閥84b開放一預定時間的方式，從閥81b供給屬於去除液之鹼顯像液至旋轉的晶圓W上。藉此，形成於晶圓W上的面塗 層膜會剝離及溶解，進而從晶圓W被去除。 The removal liquid supply process is performed in the second liquid processing unit 19 (step S108). In the removal liquid supply process, the nozzle 81b (see FIG. 7) is located above the center of the wafer W. Then, the alkali-developing liquid belonging to the removal liquid is supplied from the valve 81b to the rotating wafer W by opening the valve 84b for a predetermined time. Thereby, the topcoat formed on the wafer W The film is peeled off and dissolved, and is removed from the wafer W.

此時，殘存於晶圓W之反應生成物P，係從晶圓W被剝離而去除。又，此時，由於在晶圓W及反應生成物P產生相同極性之仄他電位，故晶圓W及反應生成物P會相斥，防止反應生成物P再附著於晶圓W等。 At this time, the reaction product P remaining on the wafer W is removed from the wafer W and removed. In this case, since the wafer W and the reaction product P generate a potential of the same polarity, the wafer W and the reaction product P repel each other, and the reaction product P is prevented from adhering to the wafer W or the like.

又，在鹼顯像液中，係含有防止Cu配線102腐蝕的防腐蝕劑。因此，即使鹼顯像液附著於Cu配線102，亦可抑制Cu配線102腐蝕。因此，根據第1實施形態之基板處理系統1，可一邊抑制對Cu配線102之損傷，一邊去除面塗層膜。 Further, the alkali developing solution contains an anticorrosive agent for preventing corrosion of the Cu wiring 102. Therefore, even if the alkali developing solution adheres to the Cu wiring 102, corrosion of the Cu wiring 102 can be suppressed. Therefore, according to the substrate processing system 1 of the first embodiment, the top coat film can be removed while suppressing damage to the Cu wiring 102.

接下來，在第2液體處理單元19中進行藥液處理(步驟S109)。在該藥液處理中，噴嘴81a(參閱圖7)係位於晶圓W的中央上方。然後，從噴嘴81a對晶圓W供給DHF。被供給至晶圓W之DHF，係藉由隨著晶圓W之旋轉的離心力，擴展至晶圓W之主面。 Next, the chemical liquid processing is performed in the second liquid processing unit 19 (step S109). In the chemical processing, the nozzle 81a (see FIG. 7) is located above the center of the wafer W. Then, DHF is supplied to the wafer W from the nozzle 81a. The DHF supplied to the wafer W is extended to the main surface of the wafer W by the centrifugal force of the rotation of the wafer W.

如此一來，在去除液供給處理之後，亦即在去除了面塗層膜之後，藉由進行藥液處理的方式，於存在有藉由面塗層膜之剝離而未完全去除之反應生成物P(尤其，粒徑小的反應生成物P)的情況下，可去除該反應生成物P。在該情況下，亦相較於一般的藥液洗淨，可一邊抑制對晶圓W之侵蝕，一邊更有效果地進行反應生成物P之去除。另外，只要是藉由去除液供給處理充分地去除反應生成物P，則亦可省略步驟S109之藥液處理亦即濕式清洗。 In this way, after the removal liquid supply treatment, that is, after the top coat film is removed, the reaction product is not completely removed by the peeling of the top coat film by the chemical liquid treatment. In the case of P (in particular, the reaction product P having a small particle diameter), the reaction product P can be removed. In this case, it is possible to remove the reaction product P more effectively while suppressing the erosion of the wafer W as compared with the general chemical liquid cleaning. In addition, as long as the reaction product P is sufficiently removed by the removal liquid supply process, the chemical liquid treatment in step S109, that is, the wet cleaning may be omitted.

當結束藥液處理時，第2液體處理單元19，係從噴嘴81c供給DIW到晶圓W，進行沖洗晶圓W之主面的沖洗處理。藉此，在溶解之面塗層膜或鹼顯像液中浮游的反應生成物P，係與DIW同時從晶圓W被去除。又，結束沖洗處理時，第2液體處理單元19，係藉由使晶圓W之旋轉速度增加一預定時間的方式，甩掉殘存於晶圓W之主面的DIW，進行使晶圓W乾燥的乾燥處理。然後，停止晶圓W之旋轉。 When the chemical liquid processing is completed, the second liquid processing unit 19 supplies the DIW from the nozzle 81c to the wafer W, and performs the rinsing process of the main surface of the rinsing wafer W. Thereby, the reaction product P floating in the dissolved top coat film or the alkali developing solution is removed from the wafer W simultaneously with the DIW. When the rinsing process is completed, the second liquid processing unit 19 removes the DIW remaining on the main surface of the wafer W by increasing the rotational speed of the wafer W for a predetermined time, and drying the wafer W. Drying treatment. Then, the rotation of the wafer W is stopped.

且，在第2液體處理單元19中進行第2搬出處理(步驟S110)。在該第2搬出處理中，晶圓W，係藉由基板搬送裝置181(參閱圖4)，從第2液體處理單元19被取出，經由收授部172及基板搬送裝置171，收容至載置於載置部16的載體C。當該第2搬出處理結束時，關於1片晶圓W之一連串的基板處理結束。 Then, the second liquid processing unit 19 performs the second carry-out processing (step S110). In the second carry-out process, the wafer W is taken out from the second liquid processing unit 19 by the substrate transfer device 181 (see FIG. 4), and is placed in the mounting by the receiving unit 172 and the substrate transfer device 171. The carrier C on the mounting portion 16. When the second carry-out process is completed, the substrate processing for one of the one wafer W is completed.

如上述，第1實施形態之基板處理系統1，係具備有載置部10、液體供給部40_2(相當於處理液供給部之一例)及基板搬送裝置111。載置部10，係載置可收容複數個晶圓W的載體C。液體供給部40_2，係對形成於內部之Cu配線102之至少一部分露出之乾蝕刻後或灰化後的晶圓W，供給屬於包含揮發成分且用於在晶圓W上形成膜之處理液的面塗層液。基板搬送裝置111，係藉由揮發成分揮發的方式，將面塗層液已固化或硬化的晶圓W搬送到載置部10，收容到載置於載置部10的載體C。 As described above, the substrate processing system 1 of the first embodiment includes the mounting portion 10, the liquid supply portion 40_2 (corresponding to an example of the processing liquid supply portion), and the substrate transfer device 111. The mounting unit 10 mounts a carrier C that can accommodate a plurality of wafers W. The liquid supply unit 40_2 supplies the processing liquid which contains the volatile component and forms a film on the wafer W, after the dry etching or the ashing of the wafer W exposed at least in part of the internal Cu wiring 102 is exposed. Topcoat liquid. In the substrate transfer apparatus 111, the wafer W on which the top coat liquid has been solidified or cured is transferred to the placing unit 10 by volatilization of the volatile components, and is stored in the carrier C placed on the placing unit 10.

因此，根據第1實施形態之基板處理系統1， 從Cu配線102露出後至洗淨的Q-time管理會變得容易，因此，可使生產率提高。 Therefore, according to the substrate processing system 1 of the first embodiment, It is easy to manage the Q-time from the exposure of the Cu wiring 102 to the cleaning, and therefore, the productivity can be improved.

(第2實施形態) (Second embodiment)

可是，在半導體之製造工程中，係存在有對晶圓W之背面進行洗淨等之背面處理的情況。但是，在該情況下，因使用於背面處理的洗淨液等會飛散或迴繞至晶圓W的主面，故有晶圓W之主面被污染之虞。 However, in the semiconductor manufacturing process, there is a case where the back surface of the wafer W is subjected to back treatment such as cleaning. However, in this case, since the cleaning liquid used for the back surface treatment or the like is scattered or rewinded to the main surface of the wafer W, the main surface of the wafer W is contaminated.

於是，在晶圓W之主面形成面塗層膜之後，亦即於晶圓W之主面被面塗層膜保護的狀態下，亦可藉由進行晶圓W之背面處理的方式，防止晶圓W之主面的污染。 Therefore, after the top coat film is formed on the main surface of the wafer W, that is, in the state where the main surface of the wafer W is protected by the top coat film, the back surface treatment of the wafer W can be prevented. Contamination of the main surface of the wafer W.

參閱圖9A及圖9B，說明該觀點。圖9A及圖9B，係表示背面洗淨處理之一例的圖。 This point of view will be described with reference to FIGS. 9A and 9B. 9A and 9B are views showing an example of the back surface cleaning process.

如圖9A所示，第1液體處理單元14A所具備的流體供給部32，係經由閥33連接於N2供給源34，並且經由閥35亦連接於SC1供給源36。該流體供給部32，係將從N2供給源34所供給的N2氣體供給到晶圓W之背面，並且將從SC1供給源36所供給的SC1(氨過水)供給到晶圓W之背面。 As shown in FIG. 9A, the fluid supply unit 32 included in the first liquid processing unit 14A is connected to the N 2 supply source 34 via the valve 33, and is also connected to the SC1 supply source 36 via the valve 35. The fluid supply unit 32 supplies the N 2 gas supplied from the N 2 supply source 34 to the back surface of the wafer W, and supplies SC1 (ammonia water) supplied from the SC1 supply source 36 to the wafer W. back.

第1液體處理單元14A，係在進行圖8所示之步驟S106的處理之後，亦即，在晶圓W之主面全體形成有面塗層膜之後，進行圖9B所示之背面洗淨處理。 The first liquid processing unit 14A performs the back surface cleaning process shown in FIG. 9B after the process of step S106 shown in FIG. 8 is performed, that is, after the top coat film is formed on the entire main surface of the wafer W. .

在該背面洗淨處理中，係藉由將閥35開放一 預定時間的方式，從流體供給部32供給SC1到旋轉之晶圓W的背面。藉此，洗淨晶圓W之背面。 In the backside washing process, the valve 35 is opened by The back surface of the wafer W to be rotated is supplied from the fluid supply unit 32 to the back surface of the wafer W for a predetermined period of time. Thereby, the back surface of the wafer W is cleaned.

如此一來，於晶圓W之主面全體被面塗層膜覆蓋的狀態下，以洗淨晶圓W之背面的方式，假設，在背面洗淨處理中即使洗淨液飛散，亦可防止洗淨液附著於晶圓W之主面而使晶圓W之主面被污染的情形。又，可防止因洗淨液之迴繞所致之晶圓W之主面的污染。 In the state in which the entire main surface of the wafer W is covered with the top coat film, the back surface of the wafer W is washed, and it is assumed that even if the cleaning liquid is scattered during the back surface cleaning treatment, it can be prevented. The cleaning liquid adheres to the main surface of the wafer W to contaminate the main surface of the wafer W. Further, it is possible to prevent contamination of the main surface of the wafer W due to the wraparound of the cleaning liquid.

在圖9A及圖9B中，雖係表示了以對晶圓W之背面供給SC1等之洗淨液的處理作為背面洗淨處理來進行時的例子，但背面洗淨處理並不限定於上述的處理。例如，亦可以使用了刷子等之洗淨體之擦洗洗淨作為背面洗淨處理來進行。 In the case where the process of supplying the cleaning liquid such as SC1 to the back surface of the wafer W is performed as the back surface cleaning process, the back surface cleaning process is not limited to the above. deal with. For example, it can also be carried out by scrubbing and washing with a cleaning body such as a brush as a backside washing treatment.

使用圖10，說明關於進行擦洗洗淨以作為背面洗淨處理時之例子。圖10，係表示背面洗淨處理之其他一例的圖。 An example of the case where the scrubbing washing is performed as the back surface washing treatment will be described with reference to Fig. 10 . Fig. 10 is a view showing another example of the back surface washing treatment.

在進行擦洗洗淨以作為背面洗淨處理的情況下，圖10所示之第1液體處理單元14B，係首先進行圖8所示之步驟S101~S106的處理。 When the scrubbing washing is performed as the back surface washing treatment, the first liquid processing unit 14B shown in Fig. 10 first performs the processing of steps S101 to S106 shown in Fig. 8 .

接下來，晶圓W，係藉由基板搬送裝置111從第1液體處理單元14B被暫時取出之後，被搬送到未圖示之反轉機構。且，晶圓W，係在藉由該反轉機構反轉表背之後，藉由基板搬送裝置111，再次被搬入至第1液體處理單元14B。另外，反轉機構，係設於例如第1處理裝置2之處理站6。作為反轉機構之構成，係亦可使用任一 公知技術。 Next, the wafer W is temporarily taken out from the first liquid processing unit 14B by the substrate transfer device 111, and then transferred to an inversion mechanism (not shown). Further, the wafer W is again loaded into the first liquid processing unit 14B by the substrate transfer device 111 after the front and back are reversed by the reversing mechanism. Further, the reversing mechanism is provided, for example, at the processing station 6 of the first processing device 2. As a component of the reversing mechanism, it is also possible to use either Known technology.

接下來，如圖10所示，第1液體處理單元14B，係在藉由基板保持機構30保持表背被反轉的晶圓W並使其旋轉之後，使用刷子500，對晶圓W之背面進行擦洗洗淨。具體而言，第1液體處理單元14B，係於使旋轉之刷子500接觸於晶圓W之背面的狀態下，使刷子500移動，藉此，去除附著於晶圓W之背面的異物。 Next, as shown in FIG. 10, the first liquid processing unit 14B holds the wafer W whose front and back are reversed by the substrate holding mechanism 30, and then rotates the wafer W to the back side of the wafer W. Wash and scrub. Specifically, the first liquid processing unit 14B moves the brush 500 while the rotating brush 500 is in contact with the back surface of the wafer W, thereby removing foreign matter adhering to the back surface of the wafer W.

此時，晶圓W之主面，係形成為被面塗層膜覆蓋全面的狀態。因此，不會有從晶圓W之背面去除的異物附著於晶圓W之主面之虞。另外，亦可從流體供給部32供給N2氣體等的流體，防止異物附著於面塗層膜。 At this time, the main surface of the wafer W is formed so as to be covered with the top coat film. Therefore, foreign matter removed from the back surface of the wafer W does not adhere to the main surface of the wafer W. Further, a fluid such as N 2 gas may be supplied from the fluid supply unit 32 to prevent foreign matter from adhering to the top coat film.

結束擦洗洗淨之晶圓W，係藉由基板搬送裝置111從第1液體處理單元14B被搬出，且在藉由未圖示之反轉機構再度反轉之後，收容到載體C。 The wafer W that has been wiped and washed is carried out from the first liquid processing unit 14B by the substrate transfer device 111, and is again inverted by an inversion mechanism (not shown), and then stored in the carrier C.

另外，在此，雖係使用刷子500，但亦可使用海綿等其他洗淨體來進行擦洗洗淨。 Here, although the brush 500 is used, it is also possible to scrub and wash using another cleaning body such as a sponge.

又，藉由將氣體團簇吐出至晶圓W之背面的方式，亦可以去除晶圓W背面之顆粒的處理作為背面洗淨處理來進行。關於該觀點，參照圖11進行說明。圖11，係表示背面洗淨處理之其他一例的圖。 Further, the process of removing the particles on the back surface of the wafer W by discharging the gas cluster onto the back surface of the wafer W can be performed as a back surface cleaning process. This point of view will be described with reference to Fig. 11 . Fig. 11 is a view showing another example of the back surface washing treatment.

如圖11所示，第1液體處理單元14C，係具備有噴嘴600。噴嘴600，係藉由高壓噴射屬於洗淨用氣體之二氧化碳的方式，藉由絕熱膨脹生成作為洗淨用氣體之原子或分子之集合體的氣體團簇。 As shown in FIG. 11, the first liquid processing unit 14C is provided with a nozzle 600. The nozzle 600 generates a gas cluster which is an aggregate of atoms or molecules of the cleaning gas by adiabatic expansion by high-pressure injection of carbon dioxide belonging to the cleaning gas.

噴嘴600，係具備有下端部開口之形成為例如概略圓筒形狀的壓力室601。該壓力室601之下端部，係構成為形成孔口部602。在該孔口部602，係連接有越朝下方越擴徑之氣體擴散部603。孔口部602之開口徑，係例如為0.1mm左右。 The nozzle 600 is provided with a pressure chamber 601 having a lower end opening and formed, for example, in a substantially cylindrical shape. The lower end portion of the pressure chamber 601 is configured to form an orifice portion 602. In the orifice portion 602, a gas diffusion portion 603 that expands in diameter as it goes downward is connected. The opening diameter of the orifice portion 602 is, for example, about 0.1 mm.

在壓力室601之上端部係連接有氣體供給路徑604之一端側，在該氣體供給路徑604係經由壓力調整閥605連接有二氧化碳供給源606。 One end side of the gas supply path 604 is connected to the upper end of the pressure chamber 601, and the carbon supply source 606 is connected to the gas supply path 604 via the pressure adjustment valve 605.

第1液體處理單元14C，係以與進行上述擦洗洗淨時相同的處理步驟，使形成有面塗層膜的晶圓W反轉，並且使保持於基板保持機構30而使其旋轉。且，第1液體處理單元14C，係以比第1液體處理單元14C之腔室20內的壓力高的壓力，將二氧化碳供給至噴嘴600。當二氧化碳從噴嘴部600被噴出至腔室20內時，會因急遽的絕熱膨脹而冷卻至凝聚溫度以下，相互之分子M1彼此會因凡得瓦爾力而結合，形成為作為集合體的氣體團簇M2。 The first liquid processing unit 14C reverses the wafer W on which the top coat film is formed, and rotates it while holding the substrate holding mechanism 30 in the same processing procedure as in the case of performing the above-described scrubbing cleaning. Further, the first liquid processing unit 14C supplies carbon dioxide to the nozzle 600 at a pressure higher than the pressure in the chamber 20 of the first liquid processing unit 14C. When carbon dioxide is ejected from the nozzle unit 600 into the chamber 20, it is cooled to a temperature equal to or lower than the agglomeration temperature due to rapid adiabatic expansion, and the molecules M1 of each other are combined by van der Waals force to form a gas group as an aggregate. Cluster M2.

氣體團簇M2，係朝向晶圓W之背面垂直地噴出，從而吹走並去除附著於晶圓W背面的異物。此時，晶圓W之主面，係形成為被面塗層膜覆蓋全面的狀態。因此，不會有從晶圓W之背面去除的異物附著於晶圓W之主面之虞。 The gas cluster M2 is vertically ejected toward the back surface of the wafer W, thereby blowing away and removing foreign matter adhering to the back surface of the wafer W. At this time, the main surface of the wafer W is formed so as to be covered with the top coat film. Therefore, foreign matter removed from the back surface of the wafer W does not adhere to the main surface of the wafer W.

結束藉由氣體團簇M2進行洗淨的晶圓W，係藉由基板搬送裝置111從第1液體處理單元14C被搬 出，且在藉由未圖示之反轉機構再度反轉之後，收容到載體C。 The wafer W that has been cleaned by the gas cluster M2 is transferred from the first liquid processing unit 14C by the substrate transfer device 111. And it is accommodated in the carrier C after being reversed again by the reversing mechanism not shown.

另外，背面洗淨處理，係除了上述的處理之外，亦可為2流體洗淨或超音波洗淨等，該2流體洗淨係使用藉由氣體使例如洗淨液噴霧化而噴吹至晶圓W之背面的2流體噴嘴，該超音波洗淨係使用超音波振動器等。 Further, the back surface cleaning treatment may be a two-fluid cleaning or an ultrasonic cleaning, in addition to the above-described treatment, and the two-fluid cleaning is performed by spraying, for example, a cleaning liquid by a gas. A two-fluid nozzle on the back surface of the wafer W, and an ultrasonic vibrator or the like is used for the ultrasonic cleaning.

又，於晶圓W之主面被面塗層膜覆蓋的狀態下進行之處理，並不限定於背面洗淨處理，例如，亦可為使用藥液來蝕刻晶圓W之背面或斜面部的蝕刻處理等。蝕刻處理，係指使用例如氫氟酸(HF)等去除氧化膜的處理。於晶圓W之主面被面塗層膜覆蓋的狀態下，以進行蝕刻處理的方式，即使藥液從晶圓W之背面側迴繞到主面側，由於晶圓W之主面亦為被面塗層膜保護的狀態，故不會被蝕刻。如此一來，由於蝕刻區域係根據面塗層膜所決定，故可精度良好地進行蝕刻。 Further, the treatment performed in a state where the main surface of the wafer W is covered with the top coat film is not limited to the back surface cleaning treatment, and for example, the back surface or the inclined surface of the wafer W may be etched using a chemical liquid. Etching treatment, etc. The etching treatment refers to a treatment of removing an oxide film using, for example, hydrofluoric acid (HF). In a state where the main surface of the wafer W is covered with the top coat film, even if the chemical liquid is rewound from the back side of the wafer W to the main surface side, the main surface of the wafer W is also etched. The top coat film is protected and will not be etched. In this way, since the etching region is determined by the top coat film, the etching can be performed with high precision.

又，於晶圓W之主面被面塗層膜覆蓋的狀態下進行之處理，係亦可為使用研磨刷子來研磨晶圓W之背面或斜面部的研磨處理。 Further, the treatment may be performed in a state where the main surface of the wafer W is covered with the top coat film, or may be a polishing process for polishing the back surface or the inclined surface portion of the wafer W using a polishing brush.

如此一來，在晶圓W之主面被面塗層膜覆蓋的狀態下，係藉由處理晶圓W之其他面的方式，可一邊防止晶圓W之主面的污染，一邊處理晶圓W之其他面。 In this way, in a state where the main surface of the wafer W is covered by the top coat film, the wafer can be processed while preventing contamination of the main surface of the wafer W by processing the other surface of the wafer W. The other side of W.

在上述的例子中，係說明第1液體處理單元14A~14C相當於其他面處理部之一例時的例子。亦即，在上述的例子中，係說明第1液體處理單元14A~14C除了 成膜用處理液供給處理，亦進行背面洗淨處理時的例子。但是，第1處理裝置2，係亦可以有別於第1液體處理單元14的方式，具備進行背面洗淨處理的背面洗淨單元。 In the above-described example, an example in which the first liquid processing units 14A to 14C correspond to one example of another surface processing unit will be described. That is, in the above example, the first liquid processing units 14A to 14C are explained. An example of the case where the film forming treatment liquid supply treatment is performed and the back surface cleaning treatment is performed. However, the first processing apparatus 2 may be different from the first liquid processing unit 14 and may include a back surface cleaning unit that performs a back surface cleaning process.

又，背面洗淨處理等之其他面處理，係亦可在第2處理裝置3予以進行。在該情況下，亦可將背面洗淨用噴嘴或刷子組入第2液體處理單元19，亦可在第2處理裝置3設置有別於第2液體處理單元19的背面處理單元。 Further, the other surface treatment such as the back surface cleaning treatment may be performed in the second processing apparatus 3. In this case, the back surface cleaning nozzle or the brush may be incorporated in the second liquid processing unit 19, or the second processing unit 3 may be provided with the back surface processing unit different from the second liquid processing unit 19.

(第3實施形態) (Third embodiment)

可是，用於進行成膜用處理液供給處理或去除液供給處理的構成，係亦可附加到不具有該些構成之原有的前處理裝置或後處理裝置。在第3實施形態中，係說明關於該點。圖12，係表示第3實施形態之第1處理裝置之概略構成的圖。 However, the configuration for performing the film forming processing liquid supply processing or the removing liquid supply processing may be added to the original pre-processing apparatus or post-processing apparatus which does not have such a configuration. In the third embodiment, the point will be described. Fig. 12 is a view showing a schematic configuration of a first processing apparatus according to a third embodiment.

如圖12所示，第1處理裝置2A，係具備有第1區塊2A1、第2區塊2A2及連接部2A3。 As shown in FIG. 12, the first processing device 2A includes a first block 2A1, a second block 2A2, and a connecting portion 2A3.

第1區塊2A1，係具備搬入搬出站5與處理站6。搬入搬出站5，係由於與第1實施形態之第1處理裝置2所具備的搬入搬出站5相同，故省略在此的說明。 The first block 2A1 includes a loading/unloading station 5 and a processing station 6. The loading/unloading station 5 is the same as the loading/unloading station 5 included in the first processing device 2 of the first embodiment, and thus the description thereof will be omitted.

在第1區塊2A1之處理站6，係配置有複數個乾蝕刻單元12。另外，與第1實施形態之第1處理裝置2的處理站6不同，在第1區塊2A1之處理站6，係未配置有第1液體處理單元14。 In the processing station 6 of the first block 2A1, a plurality of dry etching units 12 are disposed. Further, unlike the processing station 6 of the first processing device 2 of the first embodiment, the first liquid processing unit 14 is not disposed in the processing station 6 of the first block 2A1.

第2區塊2A2，係具備有搬送部11’與複數個第1液體處理單元14。搬送部11’，係具備有與基板搬送裝置111相同的基板搬送裝置112，且使用該基板搬送裝置112對第1液體處理單元14進行晶圓W之搬入搬出。 The second block 2A2 includes a transport unit 11' and a plurality of first liquid processing units 14. The conveyance unit 11' includes the same substrate transfer device 112 as the substrate transfer device 111, and the first liquid processing unit 14 is used to carry in and out the wafer W using the substrate transfer device 112.

連接部2A3，係連結第1區塊2A1之搬送部11與第2區塊2A2之搬送部11’。該連接部2A3，係具有被大氣遮斷的內部空間。內部空間，係藉由以例如N2氣體等之惰性氣體填滿的方式，被大氣遮斷。又，在內部空間，係設有未圖示之載置台。 The connecting portion 2A3 connects the conveying portion 11 of the first block 2A1 and the conveying portion 11' of the second block 2A2. The connecting portion 2A3 has an internal space that is blocked by the atmosphere. The internal space is blocked by the atmosphere by being filled with an inert gas such as N 2 gas. Further, a mounting table (not shown) is provided in the internal space.

在該第1處理裝置2A中，結束了乾蝕刻單元12中之處理的晶圓W，係藉由基板搬送裝置111從乾蝕刻單元12被取出之後，被載置到連接部2A3之未圖示的載置台。 In the first processing apparatus 2A, the wafer W that has been processed in the dry etching unit 12 is removed from the dry etching unit 12 by the substrate transfer apparatus 111, and is not shown in the connection unit 2A3. The mounting table.

被載置到載置台的晶圓W，係在藉由第2區塊2A2之基板搬送裝置112從載置台取出之後，被搬送到第1液體處理單元14，且藉由第1液體處理單元14進行圖8所示之步驟S102~S106的處理。藉此，在晶圓W之主面形成有面塗層膜。 The wafer W placed on the mounting table is taken out from the mounting table by the substrate transfer device 112 of the second block 2A2, and then transferred to the first liquid processing unit 14 by the first liquid processing unit 14 The processing of steps S102 to S106 shown in Fig. 8 is performed. Thereby, a top coat film is formed on the main surface of the wafer W.

然後，晶圓W，係在藉由基板搬送裝置112從第1液體處理單元14取出之後，經由連結部2A3之未圖示的載置台，從基板搬送裝置112被收授到基板搬送裝置111，且藉由基板搬送裝置111被收容至載置於載置部10的載體C。 Then, the wafer W is taken out from the first liquid processing unit 14 by the substrate transfer device 112, and then transferred from the substrate transfer device 112 to the substrate transfer device 111 via a mounting table (not shown) of the connection portion 2A3. The substrate transfer device 111 is housed in the carrier C placed on the mounting portion 10.

如此一來，進行成膜用處理液供給處理的第1 液體處理單元14，係有別於包含有載置部10、基板搬送裝置111及乾蝕刻單元12的第1區塊2A1，亦可配置於經由該第1區塊2A1與連接部2A3而連接的第2區塊2A2。亦即，第1液體處理單元14，係亦可附加到不具備有第1液體處理單元14之原有的前處理裝置。 In this way, the first processing liquid supply processing for film formation is performed. The liquid processing unit 14 is different from the first block 2A1 including the mounting portion 10, the substrate transfer device 111, and the dry etching unit 12, and may be disposed to be connected to the connection portion 2A3 via the first block 2A1. Block 2 2A2. In other words, the first liquid processing unit 14 may be added to an existing pretreatment apparatus that does not include the first liquid processing unit 14.

在該情況下，藉由將連接部2A3之內部空間與大氣遮斷的方式，在將乾蝕刻之後的晶圓W從第1區塊2A1搬送到第2區塊2A2時，可藉由乾蝕刻抑制露出之Cu配線102氧化。 In this case, when the wafer W after the dry etching is transferred from the first block 2A1 to the second block 2A2 by the internal space of the connection portion 2A3 and the atmosphere, the dry etching can be performed by dry etching. The exposed Cu wiring 102 is suppressed from being oxidized.

另外，與連結部2A3的內部空間相同，第1區塊2A1及第2區塊2A2的搬送部11、11’內亦被例如N2氣體填滿等，且亦可被大氣遮斷。藉此，可更抑制露出之Cu配線102氧化。 Further, similarly to the internal space of the connecting portion 2A3, the inside of the transporting portions 11, 11' of the first block 2A1 and the second block 2A2 is filled with, for example, N 2 gas, and may be blocked by the atmosphere. Thereby, oxidation of the exposed Cu wiring 102 can be further suppressed.

又，在上述的例子中，係設成為以連接部2A3來連結第1區塊2A1之搬送部11與第2區塊2A2之搬送部11’。但是，第1處理裝置2A，係亦可具有以連接部2A3連接例如第1區塊2A1之乾蝕刻單元12與第2區塊2A2之第1液體處理單元14的構成。在該情況下，在連接部2A3之內部空間配置未圖示之基板搬送裝置，且只要藉由該基板搬送裝置進行乾蝕刻單元12及第1液體處理單元14間之晶圓W的搬送即可。另外，在該情況下，第2區塊2A2，係亦可具備搬送部11’。 Moreover, in the above-described example, the transport unit 11 of the first block 2A1 and the transport unit 11' of the second block 2A2 are connected by the connection unit 2A3. However, the first processing device 2A may have a configuration in which, for example, the dry etching unit 12 of the first block 2A1 and the first liquid processing unit 14 of the second block 2A2 are connected by the connecting portion 2A3. In this case, a substrate transfer device (not shown) is disposed in the internal space of the connection portion 2A3, and the transfer of the wafer W between the dry etching unit 12 and the first liquid processing unit 14 can be performed by the substrate transfer device. . Further, in this case, the second block 2A2 may be provided with the transport unit 11'.

接下來，參閱圖13說明第2處理裝置之變形例。圖13，係表示第3實施形態之第2處理裝置之概略 構成的圖。 Next, a modification of the second processing apparatus will be described with reference to FIG. Figure 13 is a view showing the outline of a second processing apparatus according to a third embodiment. The composition of the figure.

如圖13所示，第2處理裝置3A，係具備有第1區塊3A1、第2區塊3A2及連接部3A3。 As shown in FIG. 13, the second processing device 3A includes a first block 3A1, a second block 3A2, and a connecting portion 3A3.

第1區塊3A1，係具備搬入搬出站7與處理站8。搬入搬出站7，係與第1實施形態之第2處理裝置3所具備的搬入搬出站7相同。 The first block 3A1 includes a loading/unloading station 7 and a processing station 8. The loading/unloading station 7 is the same as the loading/unloading station 7 provided in the second processing apparatus 3 of the first embodiment.

在第1區塊3A1之處理站8，係配置有複數個第2液體處理單元19A。第2液體處理單元19A，係具有從第1實施形態之第2液體處理單元19排除了與去除液供給處理有關的構成，具體而言，係具有排除了噴嘴81b、閥84b及鹼顯像液供給源85b的構成。 In the processing station 8 of the first block 3A1, a plurality of second liquid processing units 19A are disposed. The second liquid processing unit 19A has a configuration in which the second liquid processing unit 19 of the first embodiment is excluded from the removal liquid supply processing, and specifically, the nozzle 81b, the valve 84b, and the alkali developing liquid are excluded. The configuration of the supply source 85b.

第2區塊3A2，係具備有搬送部18’與複數個去除單元700。搬送部18’，係具備有與基板搬送裝置181相同的基板搬送裝置182，且使用該基板搬送裝置182對去除單元700進行晶圓W之搬入搬出。 The second block 3A2 includes a transport unit 18' and a plurality of removal units 700. The transport unit 18' includes the same substrate transport device 182 as the substrate transport device 181, and the wafer transport device 182 is used to carry in and out the wafer W from the removal unit 700.

去除單元700，係具有從第1實施形態之第2液體處理單元19排除了噴嘴81a、閥84a、DHF供給源85a、噴嘴81c、閥84c及DIW供給源85c的構成。 The removal unit 700 has a configuration in which the nozzle 81a, the valve 84a, the DHF supply source 85a, the nozzle 81c, the valve 84c, and the DIW supply source 85c are excluded from the second liquid processing unit 19 of the first embodiment.

連接部3A3，係連結第1區塊3A1之搬送部18與第2區塊3A2之搬送部18’。該連接部3A3，係具有被大氣遮斷的內部空間。內部空間，係藉由以例如N2氣體等之惰性氣體填滿的方式，被大氣遮斷。又，在內部空間，係設有未圖示之載置台。 The connection unit 3A3 connects the transport unit 18 of the first block 3A1 and the transport unit 18' of the second block 3A2. The connecting portion 3A3 has an internal space that is blocked by the atmosphere. The internal space is blocked by the atmosphere by being filled with an inert gas such as N 2 gas. Further, a mounting table (not shown) is provided in the internal space.

在該第2處理裝置3A中，晶圓W，係從搬入 搬出站7被搬送到處理站8的搬送部18之後，藉由基板搬送裝置181，被載置到連接部3A3之未圖示的載置台。 In the second processing apparatus 3A, the wafer W is carried in. After the unloading station 7 is transported to the transport unit 18 of the processing station 8, the substrate transport apparatus 181 is placed on a mounting table (not shown) of the connecting unit 3A3.

被載置到載置台的晶圓W，係藉由第2區塊3A2之基板搬送裝置182，從載置台被取出之後，被搬送到去除單元700，且藉由去除單元700進行去除液供給處理(圖8之步驟S108)。藉此，從晶圓W之主面去除面塗層膜。 The wafer W placed on the mounting table is taken out from the mounting table by the substrate transfer device 182 of the second block 3A2, and then transferred to the removing unit 700, and the removal liquid supply processing is performed by the removing unit 700. (Step S108 of Fig. 8). Thereby, the top coat film is removed from the main surface of the wafer W.

然後，晶圓W，係在藉由基板搬送裝置182，從去除單元700被取出之後，經由連結部3A3之未圖示的載置台，從基板搬送裝置182被收授到基板搬送裝置181。且，晶圓W，係藉由基板搬送裝置181，被搬送到第2液體處理單元19A，並藉由第2液體處理單元19A進行藥液處理(圖8之步驟S109)之處理之後，藉由第2搬出處理(圖8之步驟S110)被收容至載體C。 Then, the wafer W is taken out from the removal unit 700 by the substrate transfer device 182, and then transferred from the substrate transfer device 182 to the substrate transfer device 181 via a mounting table (not shown) of the connection portion 3A3. The wafer W is transferred to the second liquid processing unit 19A by the substrate transfer device 181, and is processed by the second liquid processing unit 19A (step S109 of FIG. 8). The second carry-out process (step S110 of FIG. 8) is stored in the carrier C.

如此一來，進行去除液供給處理的去除單元700，係有別於包含有載置部16、基板搬送裝置181及進行藥液處理之第2液體處理單元19A的第1區塊3A1，亦可配置於經由該第1區塊3A1與連接部3A3而連接的第2區塊3A2。亦即，去除單元700，係亦可附加到不具備有去除單元700之原有的後處理裝置。 In this way, the removal unit 700 that performs the removal liquid supply process is different from the first block 3A1 including the placement unit 16, the substrate transfer device 181, and the second liquid processing unit 19A that performs the chemical processing. The second block 3A2 connected to the connection unit 3A3 via the first block 3A1 is disposed. That is, the removal unit 700 may be attached to an existing post-processing device that does not have the removal unit 700.

在該情況下，藉由將連接部3A3之內部空間與大氣遮斷的方式，在將去除處理後的晶圓W從第2區塊3A2搬送到第1區塊3A1時，可抑制露出之Cu配線102氧化。另外，第2處理裝置3A，係亦可從大氣來遮斷 第1區塊3A1及第2區塊3A2的搬送部18、18’內。 In this case, when the wafer W after the removal process is transferred from the second block 3A2 to the first block 3A1 by blocking the internal space of the connection portion 3A3 and the atmosphere, the exposed Cu can be suppressed. The wiring 102 is oxidized. Further, the second processing device 3A can also be interrupted from the atmosphere. The first block 3A1 and the second block 3A2 are in the transport sections 18 and 18'.

另外，第2區塊3A2，係亦可具備有與搬入搬出站7相同的搬入搬出站。在該情況下，將形成有面塗層膜的晶圓W從第2區塊3A2之搬入搬出站搬入到第2區塊3A2內，且藉由去除單元700從該晶圓W去除面塗層膜之後，經由連接部3A3將該晶圓W搬送到第1區塊3A1。藉此，可提高晶圓W之搬送效率。 In addition, the second block 3A2 may be provided with the same loading/unloading station as the loading/unloading station 7. In this case, the wafer W on which the top coat film is formed is carried into the second block 3A2 from the loading/unloading station of the second block 3A2, and the top coat is removed from the wafer W by the removing unit 700. After the film, the wafer W is transferred to the first block 3A1 via the connection portion 3A3. Thereby, the transfer efficiency of the wafer W can be improved.

(第4實施形態) (Fourth embodiment)

在上述之實施形態中，係說明關於藉由將屬於去除液之鹼顯像液供給至面塗層膜的方式，從晶圓W去除面塗層膜時的例子。但是，從晶圓W去除面塗層膜的方法，並不限定於上述之例子。在下述中，係說明關於從晶圓W去除面塗層膜之去除處理的其他例。圖14，係表示第4實施形態之第2處理裝置之概略構成的圖。 In the above-described embodiment, an example in which the top coat film is removed from the wafer W by supplying the alkali developing solution belonging to the removal liquid to the top coat film will be described. However, the method of removing the top coat film from the wafer W is not limited to the above examples. In the following, another example of the removal process for removing the top coat film from the wafer W will be described. Fig. 14 is a view showing a schematic configuration of a second processing apparatus according to a fourth embodiment.

如圖14所示，第4實施形態之第2處理裝置3B，係在處理站8具備有複數個第2液體處理單元19B與複數個去除單元710。 As shown in FIG. 14, the second processing apparatus 3B of the fourth embodiment includes a plurality of second liquid processing units 19B and a plurality of removing units 710 in the processing station 8.

第2液體處理單元19B，係具有與第3實施形態之第2液體處理單元19A相同的構成。亦即，第2液體處理單元19B，係具有從第1實施形態之第2液體處理單元19，排除了作為與去除液供給處理有關之構成之噴嘴81b、閥84b及鹼顯像液供給源85b的構成。 The second liquid processing unit 19B has the same configuration as the second liquid processing unit 19A of the third embodiment. In other words, the second liquid processing unit 19B has the second liquid processing unit 19 of the first embodiment, and the nozzle 81b, the valve 84b, and the alkali developing liquid supply source 85b which are configured as the removal liquid supply processing are excluded. Composition.

去除單元710，係藉由昇華去除形成於晶圓W 的膜。在此，參閱圖15說明該去除單元710的構成。圖15，係表示第4實施形態之去除單元710之構成之一例的示意圖。 The removing unit 710 is formed on the wafer W by sublimation removal Membrane. Here, the configuration of the removal unit 710 will be described with reference to FIG. 15. Fig. 15 is a schematic view showing an example of the configuration of the removing unit 710 of the fourth embodiment.

另外，在第4實施形態中，係使用昇華性物質之溶液作為成膜用處理液。作為昇華性物質，係可使用例如矽氟化銨、樟腦或萘等。成膜用處理液，係藉由使上述之昇華性物質溶解於IPA等之揮發性溶劑的方式而獲得。該成膜用處理液，係藉由屬於溶媒之IPA揮發的方式，固化或硬化，而形成為膜。另外，成膜用處理液，係除了昇華性物質及IPA以外，亦可包含純水。 Further, in the fourth embodiment, a solution of a sublimable substance is used as a processing liquid for film formation. As the sublimating substance, for example, ammonium hydride fluoride, camphor or naphthalene can be used. The film forming treatment liquid is obtained by dissolving the above-mentioned sublimation substance in a volatile solvent such as IPA. The film forming treatment liquid is cured or cured by the method in which the IPA of the solvent is volatilized, and is formed into a film. Further, the film forming treatment liquid may contain pure water in addition to the sublimable substance and IPA.

如圖15所示，去除單元710，係具有：熱板701，內建有加熱器702；及複數個支撐銷703，從熱板701上面突出。支撐銷703，係支撐晶圓W之下面周緣部。藉此，在晶圓W的下面與熱板701的上面之間，形成有小空隙。 As shown in FIG. 15, the removing unit 710 has a hot plate 701 having a heater 702 built therein, and a plurality of support pins 703 protruding from the upper surface of the hot plate 701. The support pin 703 supports the lower peripheral portion of the wafer W. Thereby, a small gap is formed between the lower surface of the wafer W and the upper surface of the hot plate 701.

在熱板701之上方，係設有可升降移動之排氣罩704。排氣罩704，係在中央具有開口部。在該開口部係連接有排氣管705，該排氣管705係介設有昇華性物質回收裝置706及泵707。另外，作為昇華性物質回收裝置706，係可使用：在設於流通排氣之腔室內的冷卻板上使昇華性物質析出的形式者；或在流通排氣的腔室內使冷卻流體接觸於昇華性物質之氣體的形式者等；及各種眾所皆知之昇華性物質回收裝置。 Above the hot plate 701, there is provided an exhaust hood 704 that can be moved up and down. The exhaust hood 704 has an opening at the center. An exhaust pipe 705 is connected to the opening, and the exhaust pipe 705 is provided with a sublimation substance recovery device 706 and a pump 707. Further, as the sublimable substance recovery device 706, a form in which a sublimating substance is deposited on a cooling plate provided in a chamber through which the exhaust gas flows is used, or a cooling fluid is brought into contact with sublimation in a chamber through which the exhaust gas flows. The form of the gas of the substance, etc.; and various well-known sublimation material recovery devices.

該去除單元710，係當藉由基板搬送裝置181 將晶圓W載置於支撐銷703上時，使排氣罩704下降，在與熱板701之間形成處理空間。接下來，去除單元710，係一邊藉由介設於與排氣罩704連接之排氣管705的泵707，吸引晶圓W的上方空間，一邊藉由升溫的熱板701將晶圓W加熱至高於昇華性物質之昇華溫度的溫度。 The removing unit 710 is configured by the substrate transport device 181 When the wafer W is placed on the support pin 703, the hood 704 is lowered to form a processing space with the hot plate 701. Next, the removing unit 710 heats the wafer W by the temperature rising hot plate 701 while sucking the upper space of the wafer W by the pump 707 interposed in the exhaust pipe 705 connected to the exhaust hood 704. The temperature of the sublimation temperature of the sublimating substance.

藉此，晶圓W上之昇華性物質會昇華，從晶圓W被去除。此時，昇華而形成為氣體之昇華性物質，係藉由昇華性物質回收裝置706被回收，而進行再利用。然後，晶圓W，係藉由基板搬送裝置181，從去除單元710被取出，而搬送到第2液體處理單元19B。 Thereby, the sublimation substance on the wafer W is sublimated and removed from the wafer W. At this time, the sublimation substance formed into a gas by sublimation is recovered by the sublimation substance recovery device 706, and is reused. Then, the wafer W is taken out from the removing unit 710 by the substrate transfer device 181, and is transferred to the second liquid processing unit 19B.

如此一來，第2處理裝置3B，係亦可將晶圓W加熱至高於成膜用處理液所包含之昇華性物質之昇華溫度的溫度，藉此，以從晶圓W去除已固化或硬化之成膜用處理液的處理作為去除處理來進行。另外，在此的昇華方法係一例，亦可構成為藉由氣體等直接地使昇華性物質本身過熱而非基板。又，亦可根據昇華性物質之昇華溫度，省略加熱處理。 In this manner, the second processing apparatus 3B can heat the wafer W to a temperature higher than the sublimation temperature of the sublimation substance contained in the film forming processing liquid, thereby removing the cured or hardened from the wafer W. The treatment of the film forming treatment liquid is performed as a removal treatment. Further, the sublimation method here is an example, and the sublimation substance itself may be directly superheated by a gas or the like instead of the substrate. Further, the heat treatment may be omitted depending on the sublimation temperature of the sublimation substance.

(第5實施形態) (Fifth Embodiment)

在上述之實施形態中，係說明關於進行藥液處理以作為從晶圓W去除已固化或硬化之成膜用處理液之後的後處理之情形。但是，後處理，並不限定於藥液處理。在第5實施形態中，係參閱圖16說明關於進行乾蝕刻處理以作為後處理時的例子。圖16，係表示第5實施形態之第2 處理裝置之概略構成的圖。 In the above-described embodiment, the case where the chemical liquid treatment is performed as the post-treatment after removing the cured or hardened film forming processing liquid from the wafer W will be described. However, the post-treatment is not limited to the chemical treatment. In the fifth embodiment, an example in which dry etching processing is performed as post-processing will be described with reference to FIG. Figure 16 shows the second embodiment of the fifth embodiment. A schematic diagram of a processing device.

如圖16所示，第5實施形態之第2處理裝置3C，係在處理站8具備有複數個去除單元720與複數個乾蝕刻單元800。 As shown in FIG. 16, the second processing apparatus 3C of the fifth embodiment includes a plurality of removing units 720 and a plurality of dry etching units 800 in the processing station 8.

去除單元720，係具有與第4實施形態之去除單元710相同的構成，且藉由昇華從晶圓W去除已固化或硬化的成膜用處理液。另外，去除單元720，係亦可為具有與第3實施形態之去除單元700相同的構成，且藉由鹼顯像液等之去除液，從晶圓W去除已固化或硬化的成膜用處理液者。 The removing unit 720 has the same configuration as the removing unit 710 of the fourth embodiment, and removes the cured or hardened film forming processing liquid from the wafer W by sublimation. In addition, the removal unit 720 may have the same configuration as the removal unit 700 of the third embodiment, and the cured film formed by curing or hardening may be removed from the wafer W by a removal liquid such as an alkali developing solution. Liquid.

乾蝕刻單元800，係具有與第1實施形態之乾蝕刻單元12相同的構成，且藉由去除單元720，對去除了已固化或硬化之成膜用處理液的晶圓W，進行乾蝕刻處理。乾蝕刻處理後的晶圓W，係藉由第2搬出處理(圖8步驟S110)被收容到載體C。 The dry etching unit 800 has the same configuration as that of the dry etching unit 12 of the first embodiment, and the wafer W having the cured or hardened film forming processing liquid removed is subjected to dry etching treatment by the removing unit 720. . The wafer W after the dry etching process is stored in the carrier C by the second carry-out process (step S110 of FIG. 8).

如此一來，第2處理裝置3C，係亦可進行乾蝕刻處理以作為後處理。亦即，在前處理中，進行乾蝕刻處理，然後，即使對於在後處理中進一步進行乾蝕刻處理的程序，亦可追加上述之成膜用處理液供給處理及去除處理。 In this way, the second processing apparatus 3C can perform dry etching processing as post processing. In other words, the dry etching process is performed in the pre-processing, and the film forming process liquid supply process and the removal process may be added to the process of further performing the dry etching process in the post-processing.

另外，作為像這樣的程序，係例如可列舉出以硬遮罩蝕刻(對硬遮罩進行蝕刻)作為前處理來進行之後，以主蝕刻(對晶圓W上的被加工膜進行蝕刻)作為後處理來進行的程序。藉由對該程序應用上述之成膜用處 理液供給處理及去除處理的方式，可防止硬遮罩蝕刻之後的反應生成物P生長，或是使主蝕刻時之被加工膜的形狀穩定化。 In addition, as such a program, for example, hard mask etching (etching of a hard mask) is performed as a pre-processing, and then main etching (etching of a film to be processed on the wafer W) is performed. Post-processing to carry out the program. By applying the above film forming application to the program The method of the chemical liquid supply treatment and the removal treatment can prevent the growth of the reaction product P after the hard mask etching or stabilize the shape of the film to be processed at the time of the main etching.

作為去除處理，在進行由第4實施形態所說明之昇華所致之去除時，亦可在乾蝕刻單元800內進行去除處理。 As the removal processing, when the removal by the sublimation described in the fourth embodiment is performed, the removal processing may be performed in the dry etching unit 800.

(第6實施形態) (Sixth embodiment)

在上述之實施形態中，係說明以乾蝕刻處理作為前處理來進行，並且對於進行以藥液處理或乾蝕刻處理作為後處理的程序，應用成膜用處理液供給處理(將成膜用處理液供給至前處理後的晶圓W)及去除處理(從晶圓W去除已固化或硬化的成膜用處理液)的情形。但是，成膜用處理液供給處理及去除處理，並不限於上述程序，亦可應用於在FEOL(Front End Of Line)、MEOL(Middle End Of Line)及BEOL(Buck End Of Line)中所進行的各種程序。 In the above-described embodiment, the dry etching process is performed as a pre-treatment, and the film-forming process liquid supply process (the film formation process) is applied to the process of performing the chemical treatment or the dry etching process as the post-treatment. The liquid is supplied to the pre-processed wafer W) and the removal process (removing the cured or hardened film forming processing liquid from the wafer W). However, the processing liquid supply processing and the removal processing for film formation are not limited to the above procedures, and may be applied to FEOL (Front End Of Line), MEOL (Middle End Of Line), and BEOL (Buck End Of Line). Various programs.

於是，在第6實施形態中，係參閱圖17說明關於應用成膜用處理液供給處理及去除處理的程序。圖17，係表示應用成膜用處理液供給處理及去除處理之程序之例子的圖。 Then, in the sixth embodiment, a procedure for applying the film forming processing liquid supply processing and the removing processing will be described with reference to FIG. Fig. 17 is a view showing an example of a procedure for applying a processing liquid supply process and a removal process for film formation.

成膜用處理液供給處理及去除處理，係對前處理後的晶圓W，予以應用於必需實施環境管理或時間管理的程序。在此，環境管理，係例如使包圍前處理後之晶 圓W的環境維持為惰性環境。又，時間管理，係指Q-time管理，對自前處理後至後處理的時間設置限制並進行管理。 The processing liquid supply processing and the removal processing for film formation apply to the pre-processed wafer W to a program that requires environmental management or time management. Here, environmental management is, for example, a crystal that is surrounded by pre-treatment. The environment of the circle W is maintained in an inert environment. Moreover, time management refers to Q-time management, which limits and manages the time from the pre-processing to the post-processing.

亦即，成膜用處理液供給處理及去除處理所應用的程序，係將在晶圓W之表面形成因曝露於大氣而變質之部分的處理作為前處理來進行，藉此，必需實施如上述般之環境管理或時間管理的程序。藉由對像這樣的程序應用成膜用處理液供給處理及去除處理的方式，能夠以已固化或硬化的成膜用處理液，覆蓋因曝露於大氣而變質之部分並從大氣遮斷，因此，可省略前處理後之環境管理及時間管理。 In other words, the processing applied to the processing liquid supply processing and the removal processing for film formation is performed by preliminarily forming a portion which is degraded by exposure to the atmosphere on the surface of the wafer W, and thus it is necessary to carry out the above-described processing. General environmental management or time management procedures. By applying the film forming treatment liquid supply treatment and the removal treatment to the program as described above, it is possible to cover the portion which has been deteriorated by exposure to the atmosphere and to be blocked from the atmosphere by the cured film solution for film formation. The environment management and time management after pre-processing can be omitted.

如圖17所示，作為成膜用處理液供給處理及去除處理所應用的程序，係存在有於乾蝕刻(前處理)後進行濕式清洗(後處理)的程序。作為像這樣的程序，係例如可列舉出在第1實施形態所說明的程序，亦即，在藉由乾蝕刻使晶圓W內部的金屬層(不限於Cu，亦包含Co(鈷)或W(鎢)等)露出之後，藉由藥液對晶圓W進行後洗淨的程序。又，此外，亦可列舉出：在藉由乾蝕刻使Si、SiO2或SiN等或多晶矽閘電極或HKMG(High-k/Metal Gate)進行圖案化之後，藉由藥液對晶圓W進行後洗淨的程序；及在藉由乾蝕刻形成接觸孔之後，藉由藥液對晶圓W進行後洗淨的程序等。藉由對像這樣的程序應用成膜用處理液供給處理及去除處理的方式，例如可抑制前處理後之反應生成物的生長。另外，前處理，係可以 說是不僅乾蝕刻，灰化亦與上述相同。 As shown in FIG. 17, the program to be applied to the processing liquid supply processing and the removal processing for film formation is a program for performing wet cleaning (post-treatment) after dry etching (pre-treatment). As such a program, for example, a procedure described in the first embodiment, that is, a metal layer inside the wafer W by dry etching (not limited to Cu, also including Co (cobalt) or W) After the (tungsten) or the like is exposed, the wafer W is post-cleaned by the chemical solution. Further, after the Si, SiO 2 or SiN or the polysilicon gate electrode or the HKMG (High-k/Metal Gate) is patterned by dry etching, the wafer W is further processed by the chemical liquid. a cleaning procedure; and a process of post-cleaning the wafer W by a chemical solution after forming a contact hole by dry etching. By applying the film forming treatment liquid supply treatment and the removal treatment to the program as described above, for example, the growth of the reaction product after the pretreatment can be suppressed. In addition, pre-processing, can be It is said that not only dry etching, but also ashing is the same as above.

又，作為成膜用處理液供給處理及去除處理所應用的程序，係存在有於乾蝕刻(前處理)後進行乾蝕刻(後處理)的程序。作為像這樣的程序，係例如可列舉出在第5實施形態所說明的程序。在該情況下，亦藉由應用成膜用處理液供給處理及去除處理的方式，可抑制前處理後之反應生成物的生長。 Further, as a program to be applied to the processing liquid supply processing and the removal processing for film formation, there is a program for performing dry etching (post-treatment) after dry etching (pre-treatment). As such a program, for example, the program described in the fifth embodiment can be cited. In this case, the growth of the reaction product after the pretreatment can be suppressed by applying the treatment liquid supply treatment and the removal treatment for the film formation.

又，作為成膜用處理液供給處理及去除處理所應用的程序，係存在有於成膜(前處理)後進行成膜(後處理)的程序。作為像這樣的程序，係例如可列舉出：在晶圓W形成TiN層之後，更在晶圓W形成W層的程序；或是在晶圓W形成TaN層之後，更在晶圓W形成Cu層的程序。 In addition, as a program to be applied to the processing liquid supply processing and the removal processing for film formation, there is a procedure for performing film formation (post-treatment) after film formation (pre-treatment). Examples of such a program include a process of forming a W layer on the wafer W after forming a TiN layer on the wafer W, or forming a Cu on the wafer W after forming a TaN layer on the wafer W. Layer program.

在此，進行成膜處理的成膜裝置中，使用於前處理的成膜處理，係被配置於第1處理裝置的處理站，使用於後處理的成膜裝置，係被配置於第2處理裝置的處理站。作為成膜裝置，雖係可使用例如電漿CVD裝置，但亦可使用其他任一之眾所皆知的技術。 Here, in the film forming apparatus that performs the film forming process, the film forming process used in the pretreatment is placed in the processing station of the first processing device, and the film forming device used in the post-processing is placed in the second process. The processing station of the device. As the film forming apparatus, for example, a plasma CVD apparatus can be used, but any other well-known technique can be used.

另外，在使用電漿CVD裝置作為後處理之成膜裝置，且進行由第4實施形態所說明之昇華所致的去除作為去除處理時，係可在電漿CVD裝置內進行去除處理。又，以使用進行由濕式程序所致之成膜的成膜裝置作為前處理的成膜裝置時，係可在該成膜裝置內進行成膜用處理液供給處理。 Further, when the plasma CVD apparatus is used as the post-processing film forming apparatus and the removal by the sublimation described in the fourth embodiment is performed as the removal processing, the removal processing can be performed in the plasma CVD apparatus. In addition, when a film forming apparatus that performs film formation by a wet process is used as a film forming apparatus of a pretreatment, the film forming processing liquid supply process can be performed in the film forming apparatus.

又，作為成膜用處理液供給處理及去除處理所應用的程序，係存在有於濕式清洗(前處理)後進行成膜(後處理)的程序。作為像這樣的程序，係例如可列舉出在藉由藥液對晶圓W進行前洗淨，而從晶圓W去除氧化膜或顆粒等的異物之後，在晶圓W形成障礙金屬等之金屬膜的程序等。藉由對像這樣的程序應用成膜用處理液供給處理及去除處理的方式，例如可防止已成膜之金屬膜氧化，或防止顆粒附著於晶圓W。 In addition, as a program to be applied to the processing liquid supply processing and the removal processing for film formation, there is a procedure for performing film formation (post-treatment) after wet cleaning (pre-treatment). For example, in the case where the wafer W is pre-cleaned by the chemical solution, and the foreign matter such as an oxide film or particles is removed from the wafer W, a metal such as a barrier metal is formed on the wafer W. Membrane procedures, etc. By applying the film forming process liquid supply process and the removal process to such a program, for example, it is possible to prevent oxidation of the film-formed metal film or to prevent particles from adhering to the wafer W.

對進行濕式清洗作為前處理的程序，應用成膜用處理液供給處理及去除處理時，進行以第4實施形態所說明之昇華所致的去除作為去除處理為較佳。 In the process of performing the wet cleaning as the pretreatment, when the film forming treatment liquid supply treatment and the removal treatment are applied, the removal by the sublimation described in the fourth embodiment is preferably performed as the removal treatment.

亦即，在濕式清洗後進行成膜用處理液供給處理，而在晶圓W形成成膜用處理液的膜，藉此，可防止乾燥時之圖案倒毀。且，在去除處理中，藉由昇華去除成膜用處理液的膜，藉此，不使圖案倒毀就可從晶圓W去除成膜用處理液的膜。 In other words, after the wet cleaning, the film forming processing liquid supply processing is performed, and the film forming film forming liquid is formed on the wafer W, whereby the pattern during drying can be prevented from being destroyed. In the removal process, the film of the film forming processing liquid is removed by sublimation, whereby the film for the film forming processing liquid can be removed from the wafer W without destroying the pattern.

進行第2實施形態所說明之其他面處理之觀點、第3實施形態所說明之第1處理裝置及第2處理裝置的構成、由第4實施形態所說明之昇華所致的去除處理，係對於圖17所示的各程序而言，可適當地進行應用。 The other surface processing described in the second embodiment, the configuration of the first processing device and the second processing device described in the third embodiment, and the removal processing by sublimation described in the fourth embodiment are The respective programs shown in Fig. 17 can be applied as appropriate.

(其他的實施形態) (Other embodiments)

在上述之實施形態中，雖係說明了使用面塗層液或昇華性物質之溶液以作為成膜用處理液時的例子，但成膜用 處理液並不限定於該些。 In the above-described embodiment, an example in which a solution of a top coat liquid or a sublimation substance is used as a film forming treatment liquid has been described, but film formation is used. The treatment liquid is not limited to these.

例如，成膜用處理液，係亦可為包含酚醛樹脂的處理液。該酚醛樹脂亦因與上述之丙烯酸樹脂相同地引起硬化收縮，故與面塗層液相同地，在對反應生成物P賦予拉伸力該觀點為有效。 For example, the film forming treatment liquid may be a treatment liquid containing a phenol resin. In the same manner as the above-mentioned acrylic resin, the phenolic resin is hardened and contracted. Therefore, it is effective to impart a tensile force to the reaction product P in the same manner as the top coating liquid.

作為包含酚醛樹脂之成膜用處理液，係例如有光阻液。光阻液，係用於在晶圓W上形成光阻膜的成膜用處理液。具體而言，在光阻液係包含有酚醛樹脂型酚醛樹脂。 The film-forming treatment liquid containing a phenol resin is, for example, a photoresist liquid. The photoresist liquid is a film forming processing liquid for forming a photoresist film on the wafer W. Specifically, the photoresist liquid system contains a phenol resin type phenol resin.

另外，在使用光阻液作為成膜用處理液時，係只要使用可使光阻液溶解的稀釋劑作為去除液即可。在使用稀釋劑作為去除液時，可省略去除液供給處理後之沖洗處理。又，在使用光阻液作為成膜用處理液時，係亦可在進行全面曝光等之曝光處理後，對形成於晶圓W上的光阻膜供給去除液。在該情況下，去除液，係亦可為顯像液或稀釋劑。 Further, when a photoresist liquid is used as the film forming treatment liquid, a diluent which can dissolve the photoresist liquid may be used as the removal liquid. When a diluent is used as the removal liquid, the rinsing treatment after the removal liquid supply treatment can be omitted. Further, when a photoresist liquid is used as the film forming treatment liquid, the removal liquid may be supplied to the photoresist film formed on the wafer W after exposure treatment such as full exposure. In this case, the removal liquid may be a developing solution or a diluent.

包含於成膜用處理液的合成樹脂只要是硬化收縮者即可，並不限定於上述之丙烯酸樹脂或酚醛樹脂。例如，包含於成膜用處理液之合成樹脂，係亦可為環氧樹脂、三聚氰胺樹脂、尿素樹脂、不飽合聚酯樹脂、醇酸樹脂、聚氨酯、聚醯亞胺、聚乙烯、聚丙烯、聚氯乙烯、聚苯乙烯、聚醋酸乙烯、聚四氟乙烯、丙烯腈-丁二烯-苯乙烯樹脂、丙烯腈-苯乙烯樹脂、聚醯胺、尼龍樹脂、聚縮醛、聚碳酸酯、改質聚苯醚、聚對苯二甲酸丁二酯、聚對 苯二甲酸乙二酯、聚苯硫醚樹脂、聚碸樹脂、聚醚醚酮、聚醯胺醯亞胺等。 The synthetic resin contained in the film forming treatment liquid is not limited to the above-mentioned acrylic resin or phenol resin as long as it is cured and shrinkable. For example, the synthetic resin contained in the film forming treatment liquid may be an epoxy resin, a melamine resin, a urea resin, an unsaturated polyester resin, an alkyd resin, a polyurethane, a polyimide, a polyethylene, or a polypropylene. , polyvinyl chloride, polystyrene, polyvinyl acetate, polytetrafluoroethylene, acrylonitrile-butadiene-styrene resin, acrylonitrile-styrene resin, polyamide, nylon resin, polyacetal, polycarbonate , modified polyphenylene ether, polybutylene terephthalate, poly pair Ethylene phthalate, polyphenylene sulfide resin, polyfluorene resin, polyether ether ketone, polyamidoximine, and the like.

又，作為成膜用處理液，亦可使用反射防止膜液。反射防止膜液，係用於在晶圓W上形成反射防止膜的成膜用處理液。另外，反射防止膜，係減輕晶圓W之表面反射，並用於使透射率增加的保護膜。在使用反射防止膜液作為成膜用處理液時，係能夠使用可使反射防止膜液溶解的DIW作為去除液。 Further, as the film forming treatment liquid, an antireflection film liquid can also be used. The anti-reflection film liquid is a film forming treatment liquid for forming an anti-reflection film on the wafer W. Further, the anti-reflection film is a protective film for reducing the surface reflection of the wafer W and for increasing the transmittance. When the antireflection film liquid is used as the film forming treatment liquid, DIW which can dissolve the antireflection film liquid can be used as the removal liquid.

又，成膜用處理液，係除了揮發成分及合成樹脂之外，更亦可包含溶解晶圓W或被構成於晶圓W上之材料或附著於晶圓W上之異物的預定藥液。「構成於晶圓W上之材料」，係例如Cu配線102；「附著於晶圓W上之異物」，係例如反應生成物P。又，作為「預定藥液」，係例如有氟化氫、氟化氨、鹽酸、硫酸、過氧化氫水、磷酸、乙酸、硝酸、氫氧化銨、有機酸或包含有氟化氨的水溶液等。藉由利用該些藥液溶解反應生成物P之表面的方式，反應生成物P之附著力會變弱，故可成為容易除去反應生成物P之狀態。 Further, the film forming treatment liquid may further contain a predetermined chemical liquid which dissolves the wafer W or a material formed on the wafer W or a foreign matter adhering to the wafer W in addition to the volatile component and the synthetic resin. The "material constituting the wafer W" is, for example, the Cu wiring 102 and the "foreign matter adhering to the wafer W", for example, the reaction product P. Further, examples of the "predetermined chemical solution" include hydrogen fluoride, ammonium fluoride, hydrochloric acid, sulfuric acid, hydrogen peroxide water, phosphoric acid, acetic acid, nitric acid, ammonium hydroxide, an organic acid, or an aqueous solution containing ammonium fluoride. By using the chemical solution to dissolve the surface of the reaction product P, the adhesion of the reaction product P is weakened, so that the reaction product P can be easily removed.

「預定藥液」，係相較於僅使用藥液之化學性作用而進行洗淨之通常的藥液洗淨中之藥液，在蝕刻量少的條件下予以使用。因此，相較於一般的藥液洗淨，可一邊抑制對晶圓W之侵蝕，一邊更有效果地進行反應生成物P之去除。 The "predetermined chemical solution" is a chemical liquid which is used in the cleaning of a normal chemical solution which is washed only by the chemical action of the chemical liquid, and is used under the condition that the etching amount is small. Therefore, it is possible to remove the reaction product P more effectively while suppressing the erosion of the wafer W as compared with the general chemical liquid cleaning.

又，在上述之實施形態中，雖說明了使用鹼 顯像液作為去除液時的例子，但，除去液係亦可為在鹼顯像液中加入過氧化氫水者。如此一來，藉由在鹼顯像液加入過氧化氫水的方式，可抑制因鹼顯像液所致之晶圓W的面粗糙。 Further, in the above embodiment, the use of a base is described. The developing solution is an example of the removal liquid. However, the removal liquid may be one in which hydrogen peroxide is added to the alkali developing solution. As a result, the surface roughness of the wafer W due to the alkali developing solution can be suppressed by adding hydrogen peroxide water to the alkali developing solution.

又，去除液，係亦可為稀釋劑、甲苯、醋酸酯類、醇類、二醇類(丙二醇單甲醚)等的有機溶劑，亦可為醋酸、蟻酸、乙醇酸等的酸性顯像液。 Further, the removal liquid may be an organic solvent such as a diluent, a toluene, an acetate, an alcohol or a glycol (propylene glycol monomethyl ether), or an acid imaging solution such as acetic acid, formic acid or glycolic acid. .

且，去除液，係亦可更包含有界面活性劑。由於在界面活性劑有使表面張力變弱的動作，故可抑制反應生成物P再附著於晶圓W。 Further, the removal liquid may further contain a surfactant. Since the surfactant has an action of weakening the surface tension, it is possible to suppress the reaction product P from adhering to the wafer W.

又，在上述之實施形態中，雖說明了設於晶圓W之內部的金屬配線為Cu配線102時的例子，但金屬配線並不限定於Cu配線102。在該情況下，在面塗層膜之去除液，係只要含有因應於金屬配線之種類的防腐蝕劑即可。 Moreover, in the above-described embodiment, the case where the metal wiring provided inside the wafer W is the Cu wiring 102 has been described, but the metal wiring is not limited to the Cu wiring 102. In this case, the removal liquid of the top coat film may be an anticorrosive agent depending on the type of the metal wiring.

又，在上述之實施形態中，雖表示了乾蝕刻之被對象材料為金屬配線時之例子，但乾蝕刻之被對象材料或構造並不限定於金屬配線。又，第1實施形態之基板處理方法，亦能夠應用於以灰化去除光阻劑後之反應生成物的去除。例如，將光阻圖案設成為遮罩並進行離子注入，藉由灰化去除光阻劑後的晶圓之洗淨亦有效。 Moreover, in the above-described embodiment, the example in which the target material of the dry etching is a metal wiring is shown, but the target material or structure of the dry etching is not limited to the metal wiring. Moreover, the substrate processing method of the first embodiment can also be applied to the removal of the reaction product after removing the photoresist by ashing. For example, it is also effective to provide a photoresist pattern as a mask and perform ion implantation, and the wafer after removing the photoresist by ashing is also effective.

又，在上述之實施形態中，雖表示了在成膜用處理液供給處理之前及去除液供給處理之後進行藥液處理時的例子，但藥液處理係亦可僅在成膜用處理液供給處 理之前或去除液供給處理之後之任一方進行。又，不一定需要執行藥液處理。 In the above-described embodiment, the chemical liquid processing is performed before the processing liquid supply processing for film formation and after the liquid supply processing is performed. However, the chemical liquid processing system may be supplied only to the processing liquid for film formation. At It is carried out before either the treatment or the removal of the liquid supply treatment. Moreover, it is not necessary to perform a chemical treatment.

另外，在去除液供給處理之後進行藥液處理時，係亦可在第2液體處理單元19設置第1液體處理單元14所具備的液體供給部40_1，或亦可個別地設置用於進行藥液洗淨的處理單元。 In addition, when the chemical liquid processing is performed after the removal liquid supply process, the liquid supply unit 40_1 provided in the first liquid processing unit 14 may be provided in the second liquid processing unit 19, or may be separately provided for performing the chemical liquid. Washed processing unit.

又，基板處理系統1之構成，並不限定於上述之實施形態所例示的構成。 Further, the configuration of the substrate processing system 1 is not limited to the configuration exemplified in the above embodiment.

例如，亦可對結束直至圖8之步驟S107之處理的晶圓W、對進行成膜處理之其他的成膜單元，設置第2液體處理單元19所具備之液體供給部80的構成。亦即，亦在上述其他的成膜單元進行面塗層膜之去除。或是，亦可在成膜單元設置第2處理裝置3之處理站8，亦可於第2液體處理單元19內進行成膜處理。藉此，由於可在去除面塗層膜之後立刻進行成膜處理，故可使Q-time管理更簡單化。 For example, the configuration of the liquid supply unit 80 included in the second liquid processing unit 19 may be provided for the wafer W that has been processed up to the step S107 of FIG. 8 and the other film forming unit that performs the film formation process. That is, the top coat film is also removed in the other film forming units described above. Alternatively, the processing station 8 of the second processing apparatus 3 may be provided in the film forming unit, or the film forming process may be performed in the second liquid processing unit 19. Thereby, since the film formation process can be performed immediately after the top coat film is removed, the Q-time management can be simplified.

具有該發明技術領域之通常知識者，可容易導出附加的效果或變形例。因此，本發明之更廣泛的態樣，並不限定於如上述所表示且敍述之特定的詳細內容及代表性實施形態者。因此，在不脫離藉由附加之申請專利範圍及其均等物所界定的總括性之發明概念之精神或範圍下，可進行各種變更。 Additional effects or modifications can be readily derived by those of ordinary skill in the art of the invention. Therefore, the invention in its broader aspects is not intended to Accordingly, various modifications may be made without departing from the spirit and scope of the inventions.

Claims (21)

一種基板處理方法，其特徵係，包含有：處理液供給工程，對進行了於處理後必需實施環境管理或時間管理之前處理的基板，供給用於包含揮發成分並在基板上形成膜的處理液；收容工程，藉由前述揮發成分揮發的方式，將前述處理液已固化或硬化的基板收容到搬送容器。 A substrate processing method characterized by comprising: a processing liquid supply project, and a processing liquid for supplying a film containing a volatile component and forming a film on a substrate, which is subjected to environmental management or time management before processing. In the storage process, the substrate on which the treatment liquid has been solidified or cured is stored in the transfer container by volatilization of the volatile component. 如申請專利範圍第1項之基板處理方法，其中，前述前處理，係在前述基板之表面形成因曝露於大氣而變質之部分的處理。 The substrate processing method according to claim 1, wherein the pretreatment is a process of forming a portion which is deteriorated by exposure to the atmosphere on the surface of the substrate. 如申請專利範圍第1或2項之基板處理方法，其中，包含有：取出工程，取出收容於前述搬送容器之前述處理液供給工程後的基板；去除工程，在前述取出工程後，從前述基板去除已固化或硬化的前述處理液。 The substrate processing method according to claim 1 or 2, further comprising: extracting a substrate, taking out a substrate after the processing liquid supply project stored in the transfer container; removing the project, and removing the substrate from the substrate after the extracting process The aforementioned treatment liquid which has been solidified or hardened is removed. 如申請專利範圍第3項之基板處理方法，其中，更包含有：後處理工程，對前述去除工程後的基板，進行預定之後處理。 The substrate processing method of claim 3, further comprising: a post-treatment process, wherein the substrate after the removal process is subjected to a predetermined post-processing. 如申請專利範圍第4項之基板處理方法，其中，前述前處理，係對前述處理液供給工程前之基板，進行乾蝕刻或灰 化的處理，前述後處理，係對前述去除工程後之基板，進行濕式清洗的處理。 The substrate processing method of claim 4, wherein the pre-treatment is performed by dry etching or ashing the substrate before the processing liquid is supplied to the substrate. The post-treatment is a process of performing wet cleaning on the substrate after the removal process. 如申請專利範圍第4項之基板處理方法，其中，前述前處理，係對前述處理液供給工程前之基板，進行乾蝕刻或灰化的處理，前述後處理，係對前述去除工程後之基板，進行乾蝕刻的處理。 The substrate processing method according to claim 4, wherein the pre-treatment is a process of dry etching or ashing the substrate before the processing liquid supply, and the post-processing is performed on the substrate after the removal process , dry etching treatment. 如申請專利範圍第4項之基板處理方法，其中，前述前處理，係在前述處理液供給工程前之基板，形成金屬膜的處理，前述後處理，係在前述去除工程後之基板，形成金屬膜的處理。 The substrate processing method according to the fourth aspect of the invention, wherein the pre-treatment is a process of forming a metal film on a substrate before the processing liquid supply process, and the post-processing is forming a metal on the substrate after the removal process Membrane treatment. 如申請專利範圍第4項之基板處理方法，其中，前述前處理，係對前述處理液供給工程前之基板，進行濕式清洗的處理，前述後處理，係在前述去除工程後之基板，形成金屬膜的處理。 The substrate processing method according to the fourth aspect of the invention, wherein the pre-treatment is a process of performing wet cleaning on a substrate before the supply of the processing liquid, and the post-processing is performed on the substrate after the removal process Processing of metal film. 如申請專利範圍第4項之基板處理方法，其中，前述前處理，係對前述處理液供給工程前之基板，進行濕式清洗的 處理，前述處理液，係昇華性物質之溶液，前述去除工程，係使已固化或硬化的前述處理液昇華，而從前述基板去除。 The substrate processing method according to claim 4, wherein the pretreatment is performed by wet cleaning the substrate before the processing liquid is supplied to the substrate. The treatment liquid is a solution of a sublimation substance, and the removal process is performed by sublimating the cured or hardened treatment liquid from the substrate. 如申請專利範圍第1或2項之基板處理方法，其中，包含有：其他面處理工程，在被已固化或硬化之前述處理液覆蓋前述基板之主面全面的狀態下，處理前述基板的其他面。 The substrate processing method according to claim 1 or 2, further comprising: another surface treatment process, wherein the substrate is processed in a state in which the main surface of the substrate is covered by the cured or hardened processing liquid surface. 如申請專利範圍第1或2項之基板處理方法，其中，包含有：前處理工程，對基板進行前述前處理。 The substrate processing method according to claim 1 or 2, wherein the pretreatment process is performed on the substrate. 如申請專利範圍第3項之基板處理方法，其中，前述去除工程，係藉由供給去除液的方式，從前述基板去除已固化或硬化的前述處理液。 The substrate processing method according to claim 3, wherein the removing process removes the cured or hardened processing liquid from the substrate by supplying a removing liquid. 如申請專利範圍第12項之基板處理方法，其中，前述去除液，係包含有形成於前述基板之金屬配線的防腐蝕劑。 The substrate processing method according to claim 12, wherein the removal liquid contains an anticorrosive agent for metal wiring formed on the substrate. 一種基板處理裝置，其特徵係，具備有：載置部，載置可收容複數個基板的搬送容器；處理液供給部，對進行了於處理後必需實施環境管理或時間管理之前處理的基板，供給用於包含揮發成分並在 基板上形成膜的處理液；及基板搬送裝置，藉由前述揮發成分揮發的方式，將前述處理液已固化或硬化的基板搬送到前述載置部，並收容到載置於前述載置部的前述搬送容器。 A substrate processing apparatus comprising: a mounting unit that mounts a transfer container that can accommodate a plurality of substrates; and a processing liquid supply unit that performs a process before environmental management or time management after the processing, Supply for containing volatile components and a processing liquid for forming a film on the substrate; and a substrate transfer device that transports the substrate on which the processing liquid has been solidified or cured to the mounting portion by volatilization of the volatile component, and is housed in the mounting portion The transfer container described above. 如申請專利範圍第14項之基板處理裝置，其中，包含有：前處理部，對基板進行前述前處理。 The substrate processing apparatus according to claim 14, wherein the substrate processing unit includes a pre-processing unit that performs the pre-processing on the substrate. 如申請專利範圍第14項之基板處理裝置，其中，包含有：其他面處理部，在被已固化或硬化之前述處理液覆蓋前述基板之主面全面的狀態下，處理前述基板的其他面。 The substrate processing apparatus according to claim 14, further comprising: the other surface processing unit, wherein the other surface of the substrate is processed in a state in which the main surface of the substrate is covered by the cured or hardened processing liquid. 如申請專利範圍第15項之基板處理裝置，其中，具備有：第1區塊，包含前述前處理部；第2區塊，包含前述處理液供給部；及連接部，具有被大氣遮斷的內部空間，且連結前述第1區塊與前述第2區塊。 The substrate processing apparatus according to claim 15, wherein the first block includes the pretreatment unit, the second block includes the processing liquid supply unit, and the connection unit is blocked by the atmosphere. The internal space is connected to the first block and the second block. 一種基板處理裝置，其特徵係，具備有：載置部，載置可收容複數個基板的搬送容器；去除部，供給用於包含揮發成分並在基板上形成膜的處理液，且藉由前述揮發成分揮發的方式，前述處理液會固化或硬化，藉此，從實施環境管理或時間管理的基板，去除已固化或硬化的前述處理液；後處理部，對藉由前述去除部去除了已固化或硬化之 前述處理液的基板，進行預定的後處理；及基板搬送裝置，將藉由前述後處理部予以後處理的基板搬送到前述載置部，並收容到載置於前述載置部的前述搬送容器。 A substrate processing apparatus comprising: a mounting unit that mounts a transfer container that can accommodate a plurality of substrates; and a removal unit that supplies a processing liquid for containing a volatile component and forming a film on the substrate, and When the volatile component is volatilized, the treatment liquid is solidified or hardened, whereby the cured or hardened treatment liquid is removed from the substrate subjected to environmental management or time management; and the post-treatment portion is removed by the removal portion Curing or hardening The substrate of the processing liquid is subjected to a predetermined post-treatment; and the substrate transfer device transports the substrate post-processed by the post-processing unit to the mounting portion, and is housed in the transfer container placed on the mounting portion . 如申請專利範圍第18項之基板處理裝置，其中，具備有：其他面處理部，在被已固化或硬化之前述處理液覆蓋前述基板之主面全面的狀態下，處理前述基板的其他面。 The substrate processing apparatus according to claim 18, further comprising: the other surface processing unit, wherein the other surface of the substrate is processed in a state where the cured and cured processing liquid covers the entire surface of the substrate. 如申請專利範圍第18或19項之基板處理裝置，其中，具備有：第1區塊，包含前述載置部、前述基板搬送裝置及前述後處理部；第2區塊，包含前述去除部；及連接部，具有被大氣遮斷的內部空間，且連結前述第1區塊與前述第2區塊。 The substrate processing apparatus according to claim 18, wherein the first block includes: the first block, the substrate transfer device, and the post-processing portion; and the second block includes the removal portion; And the connecting portion has an internal space that is blocked by the atmosphere, and connects the first block and the second block. 一種記憶媒體，係記憶了在電腦上動作並控制基板處理系統之程式的電腦可讀取之記憶媒體，其特徵係，前述程式，係在執行時，由電腦來控制前述基板處理系統，以使申請專利範圍第1~10項中任一項之基板處理方法予以進行。 A memory medium is a computer readable memory medium that memorizes a program that operates on a computer and controls a substrate processing system. The program is characterized in that the program is controlled by a computer to perform the substrate processing system so that The substrate processing method according to any one of claims 1 to 10 is carried out.
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