TW201517303A - Method for manufacturing vertical-feedthrough LED - Google Patents
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本發明係有關於一種垂直導通式發光二極體之製造方法，尤其是指一種使用緩衝氧化矽蝕刻劑之濕式蝕刻法分離垂直導通式發光二極體元件基板之方法，有效以簡單之濕式蝕刻製程達到節省生產成本、維護元件結構，以及強化發光二極體之光萃取效率者。The invention relates to a method for manufacturing a vertical-conducting light-emitting diode, in particular to a method for separating a vertical-conducting light-emitting diode element substrate by a wet etching method using a buffered cerium oxide etchant, which is effective in simple wetness. The etching process saves production costs, maintains component structure, and enhances the light extraction efficiency of the light-emitting diode.
按，一般以氮化物半導體層為基礎之發光二極體主要係形成於以藍寶石（Ｓａｐｐｈｉｒｅ，Ａｌ２Ｏ３）結構所組成之基板上，主要的製程步驟還包括有發光結構層的磊晶，係由一ｎ型氮化物半導體層、一具有多重量子井（Ｍｕｌｔｉ－Ｑｕａｎｔｕｍ Ｗｅｌｌ，簡稱ＭＱＷ）結構的主動發光層，以及一ｐ型氮化物半導體層依序沉積於該藍寶石基板上，接著利用電感偶合電漿（Ｉｎｄｕｃｔｉｖｅ Ｃｏｕｐｌｅｄ Ｐｌａｓｍａ，簡稱ＩＣＰ）之乾式蝕刻製程或結合光微影與蝕刻之分隔（Ｉｓｏｌａｔｉｏｎ）製程定義並分割發光二極體之單位元件，接續於每個分割的ＬＥＤ元件中形成ｐ型電極，後續再形成一結構支撐層於該ｐ型電極上，由於傳統的藍寶石基板存在有不導電、不能製作背電極（單面電極係會提高元件的啟動電壓）、浪費元件面積，以及阻礙元件散熱等缺點，想要縮小發光二極體元件之尺寸勢必有所限制，尤其高功率的發光二極體必須使用高電流加以驅動，亦存在有散熱與絕緣等問題，因此，為了提升發光二極體之光萃取效率，傳統垂直導通式發光二極體製程於結構支撐層形成後，使用雷射剝離（Ｌａｓｅｒ Ｌｉｆｔ－Ｏｆｆ，簡稱ＬＬＯ）或機械研磨等技術來移除藍寶石基板，將氮化鎵磊晶層轉移到一永久基板（Ｐｅｒｍａｎｅｎｅｔ Ｓｕｂｓｔｒａｔｅ）上，亦即最後形成一ｎ型電極於暴露之每一ｎ型氮化物半導體上，形成一垂直導通式發光二極體結構。According to the nitride semiconductor layer, the light-emitting diode is mainly formed on a substrate composed of a sapphire (Al 2 O 3 ) structure, and the main process steps further include epitaxial growth of the light-emitting structure layer. An n-type nitride semiconductor layer, an active light-emitting layer having a multi-quantum well (MQW) structure, and a p-type nitride semiconductor layer are sequentially deposited on the sapphire substrate, followed by an inductor-coupled plasma (Inductive Coupled Plasma, ICP for short) dry etching process or combined with photolithography and etching separation process (Isolation) process to define and divide the unit components of the light-emitting diode, and then form a p-type electrode in each of the divided LED elements, Subsequent formation of a structural support layer on the p-type electrode, because the conventional sapphire substrate is non-conductive, can not make the back electrode (single-sided electrode system will increase the starting voltage of the component), waste element The area and the disadvantages of hindering the heat dissipation of the components, there is a limit to reducing the size of the LED components. In particular, high-power LEDs must be driven with high current, and there are problems such as heat dissipation and insulation. In order to improve the light extraction efficiency of the light-emitting diode, the conventional vertical-conducting light-emitting diode system is formed after the structural support layer is formed, and the sapphire substrate is removed by using a technique such as Laser Lift-Off (LLO) or mechanical polishing. The gallium nitride epitaxial layer is transferred onto a permanent substrate (Permanenet Substrate), that is, an n-type electrode is finally formed on each of the exposed n-type nitride semiconductors to form a vertical-conducting light-emitting diode structure.
然而，傳統使用雷射剝離基板技術的垂直導通式發光二極體常存在有雷射生產成本過高之問題；再者，由於氮化鎵具有相當強的化學鍵，光靠光子能量是不足以打斷其鍵結，因此採用熱分解的光熱蝕刻（Ｐｈｏｔｏｔｈｅｒｍａｌ Ｅｔｃｈｉｎｇ）技術來引發斷鍵反應，在工作溫度高於１１４０℃之雷射誘發介面加熱製程後，只要將試片放到加熱板上加溫至４０℃，便能順利把藍寶石基板從氮化鎵剝離，然而，此時應留意氮化鎵分解所產生的氮氣，因侷限於大小有限的區域中，常有高達六十億帕（６ＧＰａ）的氣壓產生，因而引起各式各樣的應力形變，產生大小不一的缺陷和裂紋等問題；再者，傳統使用機械研磨技術直接移除基板的垂直導通式發光二極體，亦存在有研磨之機械應力殘留而破壞後續發光結構層之疑慮存在，換句話說，由於氮化鎵薄膜與藍寶石基板間的晶格常數差異過大，當氮化鎵磊晶在藍寶石基板時，在氮化鎵薄膜上會累積極大的應力，當藍寶石基板被剝離時，氮化鎵薄膜因失去藍寶石基板支撐，使氮化鎵遭受巨大的應力改變而發生晶格斷裂或差排等缺陷，導致垂直導通式發光二極體有較差的良率、抗靜電能力，以及元件可靠度等。However, the conventional vertical light-emitting diodes using the laser stripping substrate technology often have the problem of excessive laser production cost; in addition, since gallium nitride has a relatively strong chemical bond, the photon energy is insufficient to fight. The bond is broken, so the thermal decomposition photothermal etching (Photothermal Etching) technology is used to initiate the key-breaking reaction. After the laser-induced interface heating process at a working temperature higher than 1140 ° C, the test piece is placed on the heating plate to warm. At 40 ° C, the sapphire substrate can be smoothly stripped from gallium nitride. However, attention should be paid to the nitrogen generated by the decomposition of gallium nitride. Because it is limited to a limited area, it often has up to 6 billion Pa (6 GPa). The air pressure is generated, thus causing various stress deformations, causing problems such as defects and cracks of different sizes. Furthermore, the vertical conduction light-emitting diodes that directly remove the substrate by mechanical grinding technology are also used for grinding. The existence of mechanical stress remains and destroys the subsequent luminescent structure layer, in other words, due to gallium nitride The difference in lattice constant between the film and the sapphire substrate is too large. When the gallium nitride is epitaxially deposited on the sapphire substrate, a great stress is accumulated on the gallium nitride film. When the sapphire substrate is peeled off, the gallium nitride film loses the sapphire substrate. The support causes the GaN to undergo a large stress change to cause lattice breakage or poor row defects, resulting in poor yield, antistatic capability, and component reliability of the vertical conduction light-emitting diode.
為了解決雷射與機械研磨對基板剝離所導致的晶格斷裂或差排等缺陷，因而出現以蝕刻方式進行藍寶石基板剝離之研究，在過往的專利中，如中華民國專利公告第Ｉ３９８０２２號之『光電元件之磊晶基板的分離方法』即是提供一種光電元件的製造方法，特別是指光電元件之磊晶基板的分離方法，主要藉由先成型具有間隔條狀膜體結構的犧牲膜（如氧化矽，ＳｉＯ ｘ ），而能在後續蝕刻掉犧牲膜與分離磊晶基材（如藍寶石，ｓａｐｐｈｉｒｅ）時，同時粗化得到的光電元件半成品出光面，不須進行切割過程而製得結構完整且發光亮度高的光電元件；然而，由於此發明在兩兩間隔的條狀犧牲膜之膜體結構中存在有磊晶基板與磊晶層之連結處，亦即所謂的Ｃ軸面，在此發明的較佳實施例中，需要先以氫氟酸（Ｈｙｄｒｏｆｌｕｏｒｉｃ Ａｃｉｄｅ，簡稱ＨＦ）之濕式蝕刻去除由氧化矽構成之犧牲膜，接續再以高溫２６０℃與強酸之磷酸與硫酸混合液（Ｈ ３ ＰＯ ４ ：Ｈ ２ ＳＯ ４ ＝３：１）針對存在於Ｃ軸面上的磊晶基板分離，因此，此發明具有製程步驟複雜，以及由蝕刻粗化所造成的粗糙面不易控制等缺點；使得欲達到有效移除原磊晶基板，以簡單之製程方法節省過高的生產成本與達到有效的發光二極體之良率與光萃取效率，仍是發光二極體之系統開發業者與研究人員需持續努力克服與解決之課題。In order to solve the problems of lattice rupture or poor delamination caused by laser and mechanical polishing on the substrate, the sapphire substrate detachment has been studied by etching. In the past patents, such as the Republic of China Patent Publication No. I398022 The method for separating an epitaxial substrate of a photovoltaic element is to provide a method for fabricating a photovoltaic element, and more particularly to a method for separating an epitaxial substrate of a photovoltaic element, mainly by first forming a sacrificial film having a spacer strip-shaped film structure (eg, Cerium oxide, SiO x ), which can simultaneously roughen the exit surface of the semi-finished optoelectronic component when the sacrificial film is separated and the epitaxial substrate (such as sapphire) is etched away, and the structure is completed without cutting process. And a photovoltaic element having a high luminance; however, since the invention has a junction between an epitaxial substrate and an epitaxial layer in a film structure of a strip-shaped sacrificial film spaced apart from each other, a so-called C-axis surface, In a preferred embodiment of the invention, it is necessary to first use hydrofluoric acid (Hydrofluoric Acide). The wet etching of HF) removes the sacrificial film composed of yttrium oxide, and then the mixture of phosphoric acid and sulfuric acid (H 3 PO 4 : H 2 SO 4 = 3:1) with high temperature at 260 ° C for the presence of C axis The epitaxial substrate on the surface is separated. Therefore, the invention has the disadvantages of complicated process steps and difficulty in controlling the rough surface caused by etching roughening; so that the effective removal of the original epitaxial substrate is saved by a simple process method. The high production cost and the effective yield and light extraction efficiency of the light-emitting diode are still the problems that system developers and researchers of the light-emitting diodes need to continuously overcome and solve.
今，發明人即是鑑於上述之垂直導通式發光二極體元件因存在使用高能雷射或機械研磨等技術剝離磊晶基板而造成過高的製造成本與元件結構受損而影響發光效率，以及使用濕式蝕刻導致製程複雜等諸多缺失，於是乃一本孜孜不倦之精神，並藉由其豐富之專業知識及多年之實務經驗所輔佐，而加以改善，並據此研創出本發明。Now, the inventors have in view of the above-mentioned vertical-conducting light-emitting diode elements that have excessive manufacturing costs and component structure damage due to the use of techniques such as high-energy laser or mechanical polishing to peel off the epitaxial substrate, thereby affecting luminous efficiency, and The use of wet etching leads to a lot of deficiencies in the process, so it is a tireless spirit, and it is improved by its rich professional knowledge and years of practical experience, and the invention is developed accordingly.
本發明係有關於一種垂直導通式發光二極體之製造方法，尤其是指一種使用緩衝氧化矽蝕刻劑之濕式蝕刻法分離垂直導通式發光二極體元件基板之方法，有效以簡單之濕式蝕刻製程達到節省生產成本、維護元件結構，以及強化發光二極體之光萃取效率。The invention relates to a method for manufacturing a vertical-conducting light-emitting diode, in particular to a method for separating a vertical-conducting light-emitting diode element substrate by a wet etching method using a buffered cerium oxide etchant, which is effective in simple wetness. The etching process saves production costs, maintains component structure, and enhances light extraction efficiency of the light-emitting diode.
為了達到上述實施目的，本發明人提出一種垂直導通式發光二極體之製造方法，係至少包括下列步驟：首先，於一基板上沉積一透光層；接續，使用光微影與乾式蝕刻製程於該透光層表面形成複數個彼此間隔之透光錐；然後，以電子鎗真空蒸鍍法（Ｅｌｅｃｔｒｏｎ－Ｇｕｎ Ｅｖａｐｏｒａｔｉｏｎ）蒸鍍或濺鍍方式將一Ⅲ族氮化物薄膜對應被覆於透光錐上；再者，形成一發光結構層於Ⅲ族氮化物薄膜上，其中發光結構層係由一ｎ型氮化物半導體層、一具有多重量子井結構之主動發光層，以及一ｐ型氮化物半導體層依序堆疊於Ⅲ族氮化物薄膜上所形成；接續，使用分隔製程將該基板以上之結構分隔成複數個單位發光二極體元件；之後，形成一ｐ型電極於發光結構層之ｐ型氮化物半導體層上；然後，形成一封裝基板（ｓｕｂｍｏｕｎｔ）於ｐ型電極上；後續，使用緩衝氧化矽蝕刻劑（Ｂｕｆｆｅｒ Ｏｘｉｄｅ Ｅｔｃｈａｎｔ，簡稱ＢＯＥ）結合超音波震盪製程移除透光錐與透光層，並連同移除基板；最後，形成一ｎ型電極於各分隔之ｎ型氮化物半導體層上，以完成垂直導通式發光二極體之製造方法。In order to achieve the above-mentioned implementation, the inventors propose a method for manufacturing a vertical-conducting light-emitting diode, which comprises at least the following steps: first, depositing a light-transmissive layer on a substrate; and continuing, using a photolithography and dry etching process Forming a plurality of light-transmitting cones spaced apart from each other on the surface of the light-transmitting layer; then, a group III nitride film is correspondingly coated on the light-transmitting cone by electron beam vacuum evaporation (Electron-Gun Evaporation) evaporation or sputtering Furthermore, a light-emitting structure layer is formed on the group III nitride film, wherein the light-emitting structure layer is composed of an n-type nitride semiconductor layer, an active light-emitting layer having a multiple quantum well structure, and a p-type nitride semiconductor layer. Forming sequentially on the group III nitride film; subsequently, separating the structure above the substrate into a plurality of unit light emitting diode elements by using a separation process; and then forming a p-type electrode to the p-type nitrogen of the light emitting structure layer On the semiconductor layer; then, forming a package substrate (submount) on the p-type Subsequently, using a Buffer Oxide Etchant (BOE) in combination with an ultrasonic oscillating process to remove the light-transmitting cone and the light-transmitting layer, together with removing the substrate; finally, forming an n-type electrode in each of the partitions On the n-type nitride semiconductor layer, a method of manufacturing a vertical-conventional light-emitting diode is completed.
如上所述的垂直導通式發光二極體之製造方法，其中基板係選自藍寶石、碳化矽、矽、砷化鎵、氧化鋅，以及具有六方體系結晶材料所構成群組中的一種材料而形成。The method for manufacturing a vertical-conventional light-emitting diode as described above, wherein the substrate is selected from the group consisting of sapphire, tantalum carbide, niobium, gallium arsenide, zinc oxide, and a material having a hexagonal system of crystalline materials. .
如上所述的垂直導通式發光二極體之製造方法，其中透光層係由透光性佳且折射率低於基板之材料所組成，該材料係選自氧化矽、氮氧化矽所構成之群組所構成群組中的一種材料而形成。The method for manufacturing a vertical-conventional light-emitting diode as described above, wherein the light-transmitting layer is composed of a material having good light transmittance and a lower refractive index than the substrate, and the material is selected from the group consisting of ruthenium oxide and bismuth oxynitride. A material formed by a group of groups is formed.
如上所述的垂直導通式發光二極體之製造方法，其中透光錐亦可具有一與基板表面連接之底面，以及一由底面至透光錐頂部的高度，其中高度與底面之最大寬度的比值係不小於０﹒６，透光錐係成週期性分佈，兩兩相鄰之透光錐具有相同之間距，且間距係不小於１微米，且透光錐之材料耐熱溫度係不小於１０００℃。The manufacturing method of the vertical conductive light-emitting diode as described above, wherein the light-transmitting cone may have a bottom surface connected to the surface of the substrate, and a height from the bottom surface to the top of the light-transmitting cone, wherein the height and the maximum width of the bottom surface The ratio is not less than 0.6, the light-conducting cone is periodically distributed, the adjacent light-transmitting cones have the same distance, and the spacing is not less than 1 micrometer, and the heat-resistant temperature of the material of the light-transmitting cone is not less than 1000. °C.
如上所述的垂直導通式發光二極體之製造方法，其中電子鎗真空蒸鍍法係以氮氣電漿撞擊Ⅲ族元素之靶材，以不低於６００℃之溫度，使Ⅲ族氮化物粒子以濺射方式被覆於該透光錐上，厚度係介於１００埃～１０００埃。The method for manufacturing a vertical-conducting light-emitting diode as described above, wherein the electron gun vacuum evaporation method is to impinge the target of the group III element with a nitrogen plasma, and to make the group III nitride particles at a temperature not lower than 600 ° C. The sputtering method is applied to the light-transmitting cone, and the thickness is between 100 angstroms and 1000 angstroms.
藉此，本發明係藉由緩衝氧化矽蝕刻劑之濕式蝕刻製程進行透光錐、透光層，以及基板的剝離，達成排除外加應力之基板剝離方法，有效維護元件結構不受外力破壞，保護發光二極體主體之完整性；此外，本發明藉由緩衝氧化矽蝕刻劑之濕式蝕刻製程進行透光錐、透光層，以及基板的剝離，具有製程簡單、方便之優點，其中緩衝氧化矽蝕刻劑係半導體製程中常見之酸液，具有快速導入製程優點；再者，本發明之對應被覆於透光錐之Ⅲ族氮化物薄膜於基板剝離後對應凹陷形成透光錐形狀之粗糙面，其尺寸可經由人為控制達到最佳之結構狀態，當發光結構層之主動發光層發出的光可藉由該粗糙面有效降低全反射發生之機率，進而使產生的光有較大的機率向外發射，以提高該垂直導通式發光二極體之發光亮度與光之萃取效率。Therefore, in the present invention, the light-transmitting cone, the light-transmitting layer, and the substrate are peeled off by a wet etching process of buffering the cerium oxide etchant, thereby achieving a substrate peeling method for eliminating the applied stress, thereby effectively maintaining the component structure from external force damage. The invention protects the integrity of the body of the light-emitting diode; in addition, the present invention has the advantages of simple and convenient process, and the buffer is provided by the wet etching process of buffering the cerium oxide etchant, which has the advantages of simple and convenient process, wherein the buffer is provided. The yttrium oxide etchant is a common acid solution in a semiconductor process, and has the advantages of a rapid introduction process. Further, the III-nitride film corresponding to the light-transmitting cone of the present invention is formed into a light-transmissive cone shape corresponding to the recess after the substrate is peeled off. The surface can be optimally controlled by human control. When the light emitted by the active light-emitting layer of the light-emitting structure layer can effectively reduce the probability of total reflection by the rough surface, the generated light has a greater probability. Emitted outward to improve the luminance and light extraction efficiency of the vertical-conducting light-emitting diode.
此外，本發明另提供一種垂直導通式發光二極體，係以上述實施例之方法製備而成。Further, the present invention further provides a vertical-conducting light-emitting diode prepared by the method of the above embodiment.
（１）‧‧‧基板(1) ‧‧‧Substrate
（２）‧‧‧透光層(2) ‧ ‧ light transmission layer
（２１）‧‧‧透光錐(21)‧‧‧Light cone
（２００）‧‧‧光罩(200) ‧‧‧Photomask
（３）‧‧‧光阻層(3) ‧ ‧ photoresist layer
（４）‧‧‧Ⅲ族氮化物薄膜(4) ‧‧‧III nitride film
（５）‧‧‧發光結構層(5) ‧‧‧Lighted structural layers
（５１）‧‧‧ｎ型氮化物半導體層(51)‧‧‧n type nitride semiconductor layer
（５２）‧‧‧主動發光層(52) ‧‧‧Active luminescent layer
（５３）‧‧‧ｐ型氮化物半導體層(53) ‧‧‧p type nitride semiconductor layer
（５４）‧‧‧單位發光二極體元件(54) ‧‧‧Unit LED components
（６）‧‧‧ｐ型電極(6) ‧‧‧p-type electrode
（７）‧‧‧封裝基板(7)‧‧‧Package substrate
（８）‧‧‧ｎ型電極(8)‧‧‧n type electrode
（Ｓ１）‧‧‧步驟一(S1)‧‧‧Step one
（Ｓ２）‧‧‧步驟二(S2)‧‧‧Step 2
（Ｓ３）‧‧‧步驟三(S3) ‧ ‧ Step 3
（Ｓ４）‧‧‧步驟四(S4)‧‧‧Step four
（Ｓ５）‧‧‧步驟五(S5) ‧ ‧ step five
（Ｓ６）‧‧‧步驟六(S6) ‧‧‧Step six
（Ｓ７）‧‧‧步驟七(S7) ‧‧‧Step seven
（Ｓ８）‧‧‧步驟八(S8) ‧‧‧Step eight
（Ｓ９）‧‧‧步驟九(S9)‧‧‧Step nine
（Ｗ）‧‧‧寬度(W) ‧ ‧ width
（Ｈ １ ）‧‧‧高度(H 1 )‧‧‧ Height
（Ｈ ２ ）‧‧‧厚度(H 2 )‧‧‧ thickness
（Ｓ）‧‧‧間距(S) ‧ ‧ spacing
（Ｐ）‧‧‧節距(P) ‧ ‧ pitch
第一圖：本發明垂直導通式發光二極體製造方法之步驟流程圖First: Flow chart of the steps of the method for manufacturing the vertical conduction light-emitting diode of the present invention
第二圖：本發明垂直導通式發光二極體製造方法其一較佳實施例之透光層堆疊示意圖The second figure: a schematic diagram of a light transmissive layer stacking method of a preferred embodiment of the present invention
第三圖：本發明垂直導通式發光二極體製造方法其一較佳實施例之透光錐成形示意圖The third figure: a schematic diagram of a light-transmissive cone forming method of a preferred embodiment of the method for fabricating a vertical-conducting light-emitting diode of the present invention
第四圖：本發明垂直導通式發光二極體製造方法其一較佳實施例之透光錐放大示意圖FIG. 4 is a schematic view showing the light-emitting cone of a preferred embodiment of the method for fabricating a vertical-conventional light-emitting diode of the present invention;
第五圖：本發明垂直導通式發光二極體製造方法其一較佳實施例之Ⅲ族氮化物薄膜成形示意圖Fig. 5 is a schematic view showing the formation of a group III nitride film according to a preferred embodiment of the method for fabricating a vertical-conventional light-emitting diode of the present invention
第六圖：本發明垂直導通式發光二極體製造方法其一較佳實施例之發光結構層堆疊示意圖FIG. 6 is a schematic view showing the stacking of the light-emitting structure layers of a preferred embodiment of the method for fabricating a vertical-conductor light-emitting diode of the present invention;
第七圖：本發明垂直導通式發光二極體製造方法其一較佳實施例之單位發光二極體元件分隔示意圖FIG. 7 is a schematic diagram of a unit light emitting diode element separation method according to a preferred embodiment of the present invention.
第八圖：本發明垂直導通式發光二極體製造方法其一較佳實施例之ｐ型電極成形示意圖Figure 8 is a schematic view showing the p-type electrode forming of a preferred embodiment of the method for fabricating a vertical-conventional light-emitting diode of the present invention.
第九圖：本發明垂直導通式發光二極體製造方法其一較佳實施例之封裝基板成形示意圖Ninth aspect: a schematic diagram of a package substrate formed by a preferred embodiment of the method for fabricating a vertical conductive light emitting diode of the present invention
第十圖：本發明垂直導通式發光二極體製造方法其一較佳實施例之透光層與基板剝離示意圖FIG. 10 is a schematic diagram showing the peeling of the transparent layer and the substrate according to a preferred embodiment of the method for fabricating the vertical conductive light emitting diode of the present invention.
第十一圖：本發明垂直導通式發光二極體製造方法其一較佳實施例之ｎ型電極成形示意圖Eleventh drawing: a schematic diagram of forming an n-type electrode of a preferred embodiment of the method for fabricating a vertical conductive light-emitting diode of the present invention
本發明之目的及其結構設計功能上的優點，將依據以下圖面所示之較佳實施例予以說明並清楚呈現，俾使審查委員能對本發明有更深入且具體之瞭解。The object of the present invention and its structural design and advantages will be apparent from the following detailed description of the preferred embodiments.
首先，在以下實施例的描述中，應當理解當指出一層（或膜）或一結構配置在另一個基板、另一層（或膜）、或另一結構「上」或「下」時，其可「直接」位於其他基板、層（或膜）、或另一結構，亦或者兩者間具有一個以上的中間層以「間接」方式配置，審查委員可參照附圖說明每一層所在位置。In the following description of the embodiments, it should be understood that when a layer (or film) or a structure is disposed on another substrate, another layer (or film), or another structure "on" or "down", "Directly" is located on another substrate, layer (or film), or another structure, or more than one intermediate layer between the two is disposed in an "indirect" manner. The reviewer may describe the location of each layer with reference to the drawings.
請參閱第一圖所示，為本發明垂直導通式發光二極體製造方法之步驟流程圖，其製備方法主要包括有如下步驟：Please refer to the first figure, which is a flow chart of the steps of the method for manufacturing the vertical conductive light-emitting diode of the present invention, and the preparation method thereof mainly comprises the following steps:
步驟一（Ｓ１）：於一基板（１）上沉積一透光層（２）；請參閱第二圖所示，為本發明垂直導通式發光二極體製造方法其一較佳實施例之透光層堆疊示意圖，其中基板（１）係選自藍寶石（Ｓａｐｐｈｉｒｅ，Ａｌ ２ Ｏ ３ ）、碳化矽（ＳｉＣ）、矽（Ｓｉ）、砷化鎵（ＧａＡｓ）、氧化鋅（ＺｎＯ），以及具有六方體系（Ｈｅｘａｇｏｎａｌ）結晶材料所構成群組中的一種材料而形成，而透光層（２）係由透光性佳且折射率低於基板（１）之材料所組成，該材料係選自氧化矽（ＳｉＯ ｘ ）、氮氧化矽（ＳｉＯＮ ｘ ）所構成群組中的一種材料而形成，透光層（２）之材料耐熱溫度係不小於１０００℃，以承受後續發光二極體成膜製程中的薄膜沉積之高溫；在本發明之較佳實施例中，其中基板（１）係由藍寶石材料所構成，透光層（２）係由二氧化矽（ＳｉＯ ２ ）所組成；Step 1 (S1): depositing a light transmissive layer (2) on a substrate (1); see the second figure, which is a preferred embodiment of the method for fabricating a vertical conductive light emitting diode of the present invention. Schematic diagram of light layer stacking, wherein the substrate (1) is selected from the group consisting of sapphire (Sapphire, Al 2 O 3 ), tantalum carbide (SiC), germanium (Si), gallium arsenide (GaAs), zinc oxide (ZnO), and hexagonal The Hexagonal crystalline material is formed by one of the group of materials, and the light transmissive layer (2) is composed of a material having good light transmittance and lower refractive index than the substrate (1), which is selected from oxidation. A material of a group consisting of yttrium (SiO x ) and yttrium oxynitride (SiON x ) is formed, and the heat-resistant temperature of the material of the light-transmitting layer (2) is not less than 1000 ° C to withstand the subsequent film formation process of the light-emitting diode. The high temperature of film deposition in the preferred embodiment of the present invention, wherein the substrate (1) is composed of a sapphire material, and the light transmissive layer (2) is composed of Silicon oxide (SiO 2) is composed;
步驟二（Ｓ２）：使用光微影與乾式蝕刻製程於透光層（２）表面形成複數個彼此間隔之透光錐（２１）；如第三圖所示，為本發明垂直導通式發光二極體製造方法其一較佳實施例之透光錐成形示意圖，其中光微影製程係配合使用一具有預設圖案之光罩（２００），以微影製程方式將光阻層（３）預定部分移除，使殘餘的光阻層（３）形成一遮罩圖案，致使無光阻層（３）覆蓋的透光層（２）裸露，再以遮罩圖案為遮罩，使用乾式蝕刻製程於對應遮罩圖案之透光層（２）表面形成複數個彼此間隔之透光錐（２１），其中該乾式蝕刻製程係為射頻功率介於２００瓦～４００瓦之間，以含氟的氣體，例如四氟化碳（ＣＦ ４ ）、六氟化硫（ＳＦ ６ ），以及三氟甲烷（ＣＨＦ ３ ）等，以非等向性蝕刻之特性於對應遮罩圖案之透光層（２）表面進行蝕刻，使其表面形成複數個呈圓錐狀的透光錐（２１）；再者，請參閱第四圖所示，為本發明垂直導通式發光二極體製造方法其一較佳實施例之透光錐放大示意圖，其中透光錐（２１）係具有一與基板（１）之表面連接之底面（２１１），底面（２１１）係具有一寬度Ｗ，以及一由底面（２１１）至透光錐（２１）頂部的高度（２１２），係標示為Ｈ １ ，當透光錐（２１）之高度（２１２）與底面（２１１）寬度比值過小時，即因透光錐（２１）之高度（２１２）不足而使光線接觸透光錐（２１）時的入射角過大而降低光之萃取效率，因此，本發明較佳實施例之設計為透光錐（２１）之高度（２１２）與底面（２１１）之最大寬度的比值（Ｈ １ ∕Ｗ）為不小於０﹒６，最佳的比值為介於０﹒６１～０﹒６５之間，因此，可藉由控制透光錐（２１）呈圓錐狀的設計更容易改變光線於接觸透光錐（２１）後的行進路線，進而提升發光二極體之光萃取效率，其主要目的係讓來自發光二極體之主動發光層發出，朝向基板（１）行進的光，在接觸透光錐（２１）及基板（１）後，可經由二次折射及反射後實質向外發出，有效提升發光二極體之光萃取效率，此與習知之經由蝕刻基板得到具粗化結構之磊晶基板製得的發光二極體的光萃取效率相較，本發明具有透光錐（２１）結構之發光二極體之光萃取效率可提升約２０％；再者，兩兩相鄰之透光錐（２１）彼此不連接並成週期性分佈，藉由透光錐（２１）彼此的間距調整，可使基板（１）於單位面積內具有較大的透光錐（２１）密度，而達到更佳的反射與折射效果，本發明較佳實施例之兩相鄰的透光錐（２１）間距Ｓ係不大於１微米，而兩兩透光錐（２１）頂部之距離具有相同之節距Ｐ（Ｐｉｔｃｈ）為３微米，然而必須注意的是，上述透光錐（２１）之節距３微米是為說明方便起見之較佳實施例，而非以本例所舉為限，且熟此技藝者當知道本發明之透光錐（２１）節距可以因太陽能電池之特性與製程條件不同而有不同的節距範圍，並不會影響本發明的實際實施；再者，蝕刻後殘留之透光層（２）厚度（２１３），係標示Ｈ ２ ，其值則為１﹒３微米，因此，透光層（２）之原始沉積厚度應為３微米，儘管本發明實施例之蝕刻後殘留之透光層（２）厚度１﹒３微米與二氧化矽透光層（２）之３微米厚度為一較佳實施例，但並不限定，本發明之二氧化矽透光層（２）係以經過乾式蝕刻後不形成基板（１）與後續發光二極體磊晶層接觸之Ｃ軸面為原則，在閱讀及了解本發明的敎導後，相關之變化實施屬於業界之技能；Step 2 (S2): forming a plurality of light-transmitting cones (21) spaced apart from each other on the surface of the light-transmitting layer (2) by using a photolithography and a dry etching process; as shown in the third figure, the vertical-conducting light-emitting diode of the present invention A method for forming a light-transmissive cone according to a preferred embodiment of the present invention, wherein the photolithography process is combined with a photomask (200) having a predetermined pattern, and the photoresist layer (3) is pre-processed by a micro-film process. Partially removed, so that the residual photoresist layer (3) forms a mask pattern, so that the light-transmissive layer (2) covered by the photoresist-free layer (3) is exposed, and the mask pattern is used as a mask, using a dry etching process. Forming a plurality of light-transmitting cones (21) spaced apart from each other on a surface of the light-transmitting layer (2) corresponding to the mask pattern, wherein the dry etching process is a radio frequency power between 200 watts and 400 watts, and a fluorine-containing gas For example, carbon tetrafluoride (CF 4 ), sulfur hexafluoride (SF 6 ), and trifluoromethane (CHF 3 ), etc., are characterized by anisotropic etching to the light-transmitting layer corresponding to the mask pattern (2) Surface etching Forming a plurality of conical light-conducting cones (21) on the surface thereof; further, as shown in the fourth figure, the light-conducting cone of the preferred embodiment of the method for manufacturing the vertical-conventional light-emitting diode of the present invention An enlarged schematic view, wherein the light-transmitting cone (21) has a bottom surface (211) connected to the surface of the substrate (1), the bottom surface (211) has a width W, and a bottom surface (211) to a light-transmitting cone (21) The height (212) of the top is marked as H 1 . When the ratio of the height (212) of the light-transmitting cone (21) to the width of the bottom surface (211) is too small, the height (212) of the light-transmitting cone (21) is insufficient. The incident angle when the light contacts the light-transmitting cone (21) is too large to reduce the light extraction efficiency. Therefore, the preferred embodiment of the present invention is designed to have the height (212) and the bottom surface (211) of the light-transmitting cone (21). The ratio of the maximum width (H 1 ∕W) is not less than 0.6, and the optimum ratio is between 0.61 and 0.65, so that the light transmission cone (21) can be controlled by The tapered design makes it easier to change the path of light after contacting the light-transmitting cone (21), thereby improving the light extraction efficiency of the light-emitting diode. The main purpose is to let the active light-emitting layer from the light-emitting diode emit toward the substrate. (1) The traveling light, after contacting the light-transmitting cone (21) and the substrate (1), can be substantially emitted outward after secondary refraction and reflection, thereby effectively improving the light extraction efficiency of the light-emitting diode, which is known from the conventional Compared with the light extraction efficiency of the light-emitting diode obtained by etching the substrate to obtain the epitaxial substrate having the roughened structure, the light extraction efficiency of the light-emitting diode having the light-transmitting cone (21) structure can be improved by about 20%. Furthermore, the two adjacent light-transmitting cones (21) are not connected to each other and are periodically distributed. By adjusting the spacing of the light-transmitting cones (21), the substrate (1) can be made larger in a unit area. The light transmission cone (21) density, to achieve better reflection and refraction effect, the two adjacent light transmission cones (21) spacing S of the preferred embodiment of the present invention is not more than 1 micrometer, and the two light transmission cones (2 The distance between the tops has the same pitch P(Pitch) of 3 microns. However, it must be noted that the pitch of the light-transmitting cones (21) is 3 micrometers, which is a preferred embodiment for convenience of description, rather than The example is limited, and those skilled in the art know that the pitch of the light-transmitting cone (21) of the present invention may have different pitch ranges due to the characteristics of the solar cell and the process conditions, and does not affect the present invention. Actual implementation; further, the thickness (213) of the light transmissive layer (2) remaining after etching is indicated by H 2 and its value is 1.3 μm. Therefore, the original deposition thickness of the light transmissive layer (2) should be 3 Micron, although the thickness of the light transmissive layer (2) remaining after etching in the embodiment of the present invention is 1.3 μm and the thickness of the ceria transparent layer (2) is 3 micrometers is a preferred embodiment, but is not limited thereto. The invention relates to the ceria transparent layer (2) based on the principle that the C-axis surface of the substrate (1) and the subsequent epitaxial layer of the light-emitting diode are not formed after dry etching, after reading and understanding the guide of the present invention , related changes implemented The industry's skills;
步驟三（Ｓ３）：以電子鎗真空蒸鍍法蒸鍍或濺鍍方式將一Ⅲ族氮化物薄膜（４）對應被覆於透光錐（２１）上；請參閱第五圖所示，為本發明垂直導通式發光二極體製造方法其一較佳實施例之Ⅲ族氮化物薄膜成形示意圖，其中，Ⅲ族氮化物薄膜（４）係選自氮化鋁（ＡｌＮ），以及氮化鎵（ＧａＮ）所構成群組中的一種材料而形成，本發明Ⅲ族氮化物薄膜（４）之較佳實施例係為氮化鋁之薄膜，若氮化鋁之厚度小於１００埃，則氮化鋁會呈顆粒狀而無法形成有效的薄膜，倘若氮化鋁之厚度大於１０００埃，則在後續之發光二極體成膜製程中會造成爆裂（ｃｒａｃｋ）情形產生，因此，在本發明之較佳實施例中，Ⅲ族氮化物薄膜（４）之最佳厚度係介於１００埃～１０００埃之間，本發明具有Ⅲ族氮化物薄膜（４）與透光錐（２１）所組成之發光二極體，與僅具有透光錐（２１）之發光二極體相較，其光之萃取效率約可提升至１５％～２０％；Step 3 (S3): a group III nitride film (4) is correspondingly coated on the light-transmitting cone (21) by electron gun vacuum evaporation or evaporation; see the fifth figure, which is the present invention. A schematic diagram of a method for fabricating a III-nitride film according to a preferred embodiment of the method for fabricating a vertical-conductor light-emitting diode, wherein the group III nitride film (4) is selected from the group consisting of aluminum nitride (AlN), and gallium nitride (GaN). a preferred material of the group III nitride film (4) of the present invention is a film of aluminum nitride. If the thickness of the aluminum nitride is less than 100 angstroms, the aluminum nitride It is in the form of particles and cannot form an effective film. If the thickness of the aluminum nitride is more than 1000 angstroms, a crack occurs in the subsequent process of forming the light-emitting diode. Therefore, in the preferred embodiment of the present invention, In the example, the optimum thickness of the group III nitride film (4) is between 100 angstroms and 1000 angstroms, and the luminescent layer composed of the group III nitride film (4) and the light transmitting cone (21) of the present invention. Polar body, and having only a light-transmissive members (21) of the light emitting diode in comparison, the light extraction efficiency can be improved to approximately 15% to 20%;
步驟四（Ｓ４）：形成一發光結構層（５）於Ⅲ族氮化物薄膜（４）上，其中發光結構層（５）係由一ｎ型氮化物半導體層（５１）、一具有多重量子井結構之主動發光層（５２），以及一ｐ型氮化物半導體層（５３）依序堆疊於Ⅲ族氮化物薄膜（４）上所形成；請參閱第六圖所示，為本發明垂直導通式發光二極體製造方法其一較佳實施例之發光結構層堆疊示意圖，其中ｎ型氮化物半導體層（５１）、主動發光層（５２），以及一ｐ型氮化物半導體層（５３）可以由一具有分子式Ａｌ ｘ Ｉｎ ｙ Ｇａ （１－ｘ－ｙ） Ｎ之氮化物半導體材料所組成，其中０ ≤ ｘ ≤ １，０ ≤ ｙ ≤ １及０ ≤ ｘ＋ｙ ≤ １，並且該等薄膜亦可藉由一已知之氮化物沉積製程，例如有機金屬化學沉積法（Ｍｅｔａｌ Ｏｒｇａｎｉｃ Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ，簡稱ＭＯＣＶＤ）或是本發明人同日申請之另一發明專利『適用於發光二極體之圖形化基板及其製造方法』中所闡述的氫化物氣相磊晶方式（Ｈｙｄｒｉｄｅ Ｖａｐｏｒ Ｐｈａｓｅ Ｅｐｉｔａｘｙ，簡稱ＨＶＰＥ）等方法所製備；Step 4 (S4): forming a light-emitting structure layer (5) on the group III nitride film (4), wherein the light-emitting structure layer (5) is composed of an n-type nitride semiconductor layer (51) and a multi-quantum well The active light-emitting layer (52) of the structure, and a p-type nitride semiconductor layer (53) are sequentially stacked on the group III nitride film (4); as shown in the sixth figure, the vertical guide of the present invention LED light-emitting diode manufacturing method is a schematic diagram of a light-emitting structure layer stacking in a preferred embodiment, wherein the n-type nitride semiconductor layer (51), the active light-emitting layer (52), and a p-type nitride semiconductor layer (53) can be composed of a nitride semiconductor material having a molecular formula of Al x In y Ga (1-x-y) N, wherein 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and 0 ≤ x + y ≤ 1, and the films can also be borrowed By a known nitride deposition process, such as organometallic chemical deposition (Metal Organic Chemical Vapor) Eposition (referred to as MOCVD) or the Hydride Vapor Phase Epitaxy (Hydride Vapor Phase Epitaxy) described in the invention patent application "The patterned substrate for a light-emitting diode and its manufacturing method". Prepared by methods such as HVPE);
步驟五（Ｓ５）：使用分隔製程將基板（１）以上之結構分隔成複數個單位發光二極體元件（５４）；請參閱第七圖所示，為本發明垂直導通式發光二極體製造方法其一較佳實施例之單位發光二極體元件分隔示意圖，其中該分隔製程係經由一具有預定圖案之光罩以光微影與蝕刻製程將基板（１）以上之結構定義成複數個單位發光二極體元件（５４）；Step 5 (S5): separating the structure above the substrate (1) into a plurality of unit light emitting diode elements (54) by using a separation process; as shown in the seventh figure, manufacturing the vertical conductive light emitting diode of the present invention A partitioning diagram of a unit light-emitting diode element according to a preferred embodiment of the present invention, wherein the partitioning process defines a structure of the substrate (1) or more into a plurality of units by a photolithography and etching process through a photomask having a predetermined pattern. Light emitting diode element (54);
步驟六（Ｓ６）：形成一ｐ型電極（６）於該ｐ型氮化物半導體層（５３）上；請參閱第八圖所示，為本發明垂直導通式發光二極體製造方法其一較佳實施例之ｐ型電極成形示意圖，其中ｐ型電極（６）係可由習知高反射比（ｒｅｇｌｅｃｔａｎｃｅ）之金屬物質所形成，可例如為鉑/金層、鎳/金層，以及鎳/銀/鉑層的堆疊層等，與ｐ型氮化物半導體層（５３）成歐姆接觸以做為一電極及一反射層；Step 6 (S6): forming a p-type electrode (6) on the p-type nitride semiconductor layer (53); please refer to the eighth figure, which is a comparison method for manufacturing the vertical-conventional light-emitting diode of the present invention. A schematic diagram of p-type electrode formation in a preferred embodiment, wherein the p-type electrode (6) is formed of a metal material of a conventional high reflectance, and may be, for example, a platinum/gold layer, a nickel/gold layer, and a nickel/silver layer. a stacked layer of a platinum layer or the like, in ohmic contact with the p-type nitride semiconductor layer (53) as an electrode and a reflective layer;
步驟七（Ｓ７）：形成一封裝基板（７）於ｐ型電極（６）上；請參閱第九圖所示，本發明垂直導通式發光二極體製造方法其一較佳實施例之封裝基板成形示意圖；Step 7 (S7): forming a package substrate (7) on the p-type electrode (6); see the ninth figure, the package method of the preferred embodiment of the method for manufacturing the vertical-conventional light-emitting diode of the present invention Forming diagram
步驟八（Ｓ８）：使用緩衝氧化矽蝕刻劑（ＢＯＥ）結合超音波震盪製程移除透光錐（２１）與透光層（２），並連同移除基板（１）；請參閱第十圖所示，本發明垂直導通式發光二極體製造方法其一較佳實施例之透光層與基板剝離示意圖；其中在本發明之較佳實施例中，透光錐（２１）與透光層（２）係由二氧化矽（ＳｉＯ ２ ）所組成，一般二氧化矽係以緩衝氧化矽蝕刻劑（ＢＯＥ），或稱氫氟酸（Ｂｕｆｆｅｒｅｄ Ｈｙｄｒｏｆｌｕｏｒｉｃ Ａｃｉｄ，簡稱ＢＨＦ）為去除之蝕刻劑，舉例而言，一般濃度為５：１之ＢＯＥ對二氧化矽之蝕刻速率約為每分鐘１０００埃，其中５：１係指４０ｗｔ﹒％的氟化銨（ＮＨ ４ Ｆ）和４９ｗｔ﹒％的氫氟酸（ＨＦ）之重量百分比組合而成，由於本發明之透光層（２）的構成材料可以有多種類之變化，且可視後續的蝕刻剝離製程而變，其製程方法已為習知技藝中眾所皆知之知識，且並非本發明之重點，因此，不再本發明中加以贅述；由於本發明較佳實施例之垂直導通式發光二極體不具有基板（１）與發光結構層（５）之ｎ型氮化物半導體層（５１）接觸之Ｃ軸面，因此，當以ＢＯＥ蝕刻劑蝕刻透光層（２）與透光錐（２１）之二氧化矽時，連結於透光層（２）之基板（１）亦會一起被剝離，有效達成以簡單之濕式蝕刻製程排除外加應力之基板剝離方法；再者，對應被覆於透光錐（２１）之Ⅲ族氮化物薄膜（４）於基板剝離後對應凹陷形成透光錐（２１）形狀之粗糙面，當發光結構層（５）之主動發光層（５２）發出的光可藉由該粗糙面有效降低全反射發生之機率，進而使產生的光有較大的機率向外發射，以提高該垂直導通式發光二極體之發光亮度與光之萃取效率；以及Step 8 (S8): using a buffered ruthenium oxide etchant (BOE) in combination with an ultrasonic oscillating process to remove the light-transmitting cone (21) and the light-transmitting layer (2), and together with the removal of the substrate (1); see the tenth figure As shown in the preferred embodiment of the present invention, the light transmissive layer and the substrate are stripped. In the preferred embodiment of the present invention, the light transmissive cone (21) and the light transmissive layer are shown. (2) is composed of cerium oxide (SiO 2 ), generally cerium oxide is buffered cerium oxide etchant (BOE), or hydrofluoric acid (BHF) as an etchant for removal, for example In general, the etching rate of BOE to ceria for a concentration of 5:1 is about 1000 angstroms per minute, of which 5:1 means 40 wt. % ammonium fluoride (NH 4 F) and 49wt. The weight percentage of % hydrofluoric acid (HF) is combined. Since the constituent materials of the light-transmitting layer (2) of the present invention can be variously changed, and can be changed according to the subsequent etching stripping process, the manufacturing method thereof is The knowledge of the prior art is not the focus of the present invention and therefore will not be described in detail in the present invention; since the vertical-conducting light-emitting diode of the preferred embodiment of the present invention does not have a substrate (1) The n-type nitride semiconductor layer (51) of the light-emitting structure layer (5) contacts the C-axis plane. Therefore, when the light-transmitting layer (2) and the light-transmitting cone (21) are etched with a BOE etchant, the connection is made. The substrate (1) on the light transmissive layer (2) is also peeled off together, effectively achieving a substrate peeling method that eliminates external stress by a simple wet etching process; further, corresponding to the III group covered by the light transmitting cone (21) The nitride film (4) forms a rough surface of the shape of the light-transmitting cone (21) corresponding to the recess after the substrate is peeled off, and the light emitted by the active light-emitting layer (52) of the light-emitting structure layer (5) can be obtained by the rough surface. Reducing the probability of total reflection, and thus the light has a greater chance of generating emission outwardly to increase the extraction efficiency of the light emitting brightness of the vertical guide light emitting diode of the formula; and
步驟九（Ｓ９）：形成一ｎ型電極（８）於各分隔之Ⅲ族氮化物薄膜（４）上，以完成該垂直導通式發光二極體之製造方法；請參閱第十一圖所示，為本發明垂直導通式發光二極體製造方法其一較佳實施例之ｎ型電極成形示意圖。Step 9 (S9): forming an n-type electrode (8) on each of the divided III-nitride films (4) to complete the manufacturing method of the vertical-conducting light-emitting diode; see FIG. It is a schematic diagram of the n-type electrode forming of a preferred embodiment of the method for fabricating a vertical conductive light-emitting diode of the present invention.
此外，本發明另提供一種垂直導通式發光二極體，係以上述實施例之方法製備而成。Further, the present invention further provides a vertical-conducting light-emitting diode prepared by the method of the above embodiment.
由上述之實施說明可知，本發明之垂直導通式發光二極體之製造方法與現有技術相較之下，本發明具有以下優點：It can be seen from the above description that the manufacturing method of the vertical-conducting light-emitting diode of the present invention has the following advantages compared with the prior art:
1.本發明垂直導通式發光二極體之製造方法係藉由緩衝氧化矽蝕刻劑之濕式蝕刻製程進行透光錐、透光層，以及基板的剝離，達成排除外加應力之基板剝離方法，有效維護元件結構不受外力破壞，保護發光二極體主體之完整性。1. The method for manufacturing a vertical-conventional light-emitting diode according to the present invention is a method for removing a light-transmitting cone, a light-transmitting layer, and a substrate by a wet etching process of buffering a cerium oxide etchant, thereby achieving a substrate peeling method for eliminating an applied stress. Effectively maintain the structure of the component from external damage and protect the integrity of the body of the LED.
2.本發明垂直導通式發光二極體之製造方法係藉由緩衝氧化矽蝕刻劑之濕式蝕刻製程進行透光錐、透光層，以及基板的剝離，具有製程簡單、方便之優點，其中緩衝氧化矽蝕刻劑係半導體製程中常見之酸液，具有快速導入製程優點。2. The method for manufacturing a vertical-conducting light-emitting diode of the present invention has the advantages of simple and convenient process, wherein the light-transmitting cone, the light-transmitting layer, and the substrate are peeled off by a wet etching process of buffering the cerium oxide etchant, wherein the process is simple and convenient, wherein The buffered cerium oxide etchant is a common acid solution in a semiconductor process, and has the advantages of a rapid introduction process.
3.本發明垂直導通式發光二極體之製造方法之對應被覆於透光錐之Ⅲ族氮化物薄膜於基板剝離後對應凹陷形成透光錐形狀之粗糙面，其尺寸可經由人為控制達到最佳之結構狀態，當發光結構層之主動發光層發出的光可藉由該粗糙面有效降低全反射發生之機率，進而使產生的光有較大的機率向外發射，以提高該垂直導通式發光二極體之發光亮度與光之萃取效率。3. The method for manufacturing a vertical-conducting light-emitting diode of the present invention corresponds to a rough surface of a group III nitride film coated with a light-transmitting cone after the substrate is peeled off to form a light-transmissive cone shape, and the size thereof can be controlled by human control. Preferably, when the light emitted by the active light-emitting layer of the light-emitting structure layer can effectively reduce the probability of occurrence of total reflection by the rough surface, the generated light has a greater probability of being emitted outward to improve the vertical guide. Luminous brightness of light-emitting diodes and extraction efficiency of light.
綜上所述，本發明之垂直導通式發光二極體之製造方法，的確能藉由上述所揭露之實施例，達到所預期之使用功效，且本發明亦未曾公開於申請前，誠已完全符合專利法之規定與要求。爰依法提出發明專利之申請，懇請惠予審查，並賜准專利，則實感德便。In summary, the manufacturing method of the vertical-conducting light-emitting diode of the present invention can achieve the intended use efficiency by the above-mentioned disclosed embodiments, and the present invention has not been disclosed before the application, and has been completely completed. Meet the requirements and requirements of the Patent Law.爰Issuing an application for a patent for invention in accordance with the law, and asking for a review, and granting a patent, is truly sensible.
惟，上述所揭之圖示及說明，僅為本發明之較佳實施例，非為限定本發明之保護範圍；大凡熟悉該項技藝之人士，其所依本發明之特徵範疇，所作之其它等效變化或修飾，皆應視為不脫離本發明之設計範疇。The illustrations and descriptions of the present invention are merely preferred embodiments of the present invention, and are not intended to limit the scope of the present invention; those skilled in the art, which are characterized by the scope of the present invention, Equivalent variations or modifications are considered to be within the scope of the design of the invention.
(S1)‧‧‧步驟一 (S1)‧‧‧Step one
(S2)‧‧‧步驟二 (S2)‧‧‧Step 2
(S3)‧‧‧步驟三 (S3) ‧ ‧ Step 3
(S4)‧‧‧步驟四 (S4)‧‧‧Step four
(S5)‧‧‧步驟五 (S5) ‧ ‧ step five
(S6)‧‧‧步驟六 (S6) ‧‧‧Step six
(S7)‧‧‧步驟七 (S7) ‧‧‧Step seven
(S8)‧‧‧步驟八 (S8) ‧‧‧Step eight
(S9)‧‧‧步驟九 (S9)‧‧‧Step nine
Claims (10)
步驟一：於一基板上沉積一透光層；
步驟二：使用光微影與乾式蝕刻製程於該透光層表面形成複數個彼此間隔之透光錐；
步驟三：以電子鎗真空蒸鍍法蒸鍍或濺鍍方式將一Ⅲ族氮化物薄膜對應被覆於該透光錐上；
步驟四：形成一發光結構層於該Ⅲ族氮化物薄膜上，其中該發光結構層係由一ｎ型氮化物半導體層、一具有多重量子井結構之主動發光層，以及一ｐ型氮化物半導體層依序堆疊於該Ⅲ族氮化物薄膜上所形成；
步驟五：使用分隔製程將該基板以上之結構分隔成複數個單位發光二極體元件；
步驟六：形成一ｐ型電極於該發光結構層之ｐ型氮化物半導體層上；
步驟七：形成一封裝基板於該ｐ型電極上；
步驟八：使用緩衝氧化矽蝕刻劑結合超音波震盪製程移除該透光錐與透光層，並連同移除該基板；以及
步驟九：形成一ｎ型電極於各分隔之Ⅲ族氮化物薄膜上，以完成該垂直導通式發光二極體之製造方法。A method for manufacturing a vertical conductive light-emitting diode, the steps of which include:
Step 1: depositing a light transmissive layer on a substrate;
Step 2: forming a plurality of light-transmitting cones spaced apart from each other on the surface of the light-transmitting layer by using a photolithography and a dry etching process;
Step 3: correspondingly coating a group III nitride film on the light-transmitting cone by electron gun vacuum evaporation or evaporation;
Step 4: forming a light-emitting structure layer on the group III nitride film, wherein the light-emitting structure layer is composed of an n-type nitride semiconductor layer, an active light-emitting layer having a multiple quantum well structure, and a p-type nitride semiconductor Layers are sequentially stacked on the group III nitride film;
Step 5: separating the structure above the substrate into a plurality of unit light emitting diode elements by using a separation process;
Step 6: forming a p-type electrode on the p-type nitride semiconductor layer of the light-emitting structure layer;
Step 7: forming a package substrate on the p-type electrode;
Step 8: removing the light-transmitting cone and the light-transmitting layer by using a buffered cerium oxide etchant in combination with an ultrasonic oscillating process, and removing the substrate together; and Step 9: forming an n-type electrode on each of the separated III-nitride films The method for manufacturing the vertical-conducting light-emitting diode is completed.
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