TW201513213A

TW201513213A - Plasma processing apparatus

Info

Publication number: TW201513213A
Application number: TW103121311A
Authority: TW
Inventors: tao-tao Zuo; Di Wu
Original assignee: Advanced Micro Fabrication Equipment Shanghai Co Ltd
Priority date: 2013-07-17
Filing date: 2014-06-20
Publication date: 2015-04-01
Also published as: CN104299874B; CN104299874A; TWI534890B

Abstract

The present invention discloses a plasma processing apparatus, which is capable of heating plasmas in a plasma reaction chamber and meeting the temperature requirements of a plasma etching process through the installation of a plasma heating ring carrying heating elements; by disposing heat-insulation channels around the said heating elements, the heat generated by the heating elements of the plasma heating ring are isolated from peripheral components and external space, so that the heat will be preserved without loss while ensuring the temperature between components can be controlled independently, thereby facilitating the reaction process to meet different temperature requirements at different positions. Because the heat-insulation channels can isolate the heat generated by the heating elements from the external space, it is ensured that the temperature of the external space will be safe for an operator.

Description

等離子體處理裝置Plasma processing device

本發明涉及等離子體處理技術領域，尤其涉及一種電感耦合等離子體處理裝置。The present invention relates to the field of plasma processing technologies, and in particular, to an inductively coupled plasma processing apparatus.

等離子體處理裝置廣泛應用於集成電路的製造工藝中，如沉積、刻蝕等。其中，電感耦合型等離子體（ICP，Inductively Coupled Plasma）裝置是等離子體處理裝置中的主流技術之一，其原理主要是使用射頻功率驅動電感耦合線圈産生較强的高頻交變磁場，使得低壓的反應氣體被電離産生等離子體。等離子體中含有大量的電子、離子、激發態的原子、分子和自由基等活性粒子，上述活性粒子可以和待處理晶圓的表面發生多種物理和化學反應，使得晶圓表面的形貌發生改變，即完成刻蝕過程；另外，上述活性離子比常規的氣態反應物具有更高的活性，可以促進反應氣體間的化學反應，即可以實現等離子體增强型化學氣相沉積（PECVD）Plasma processing devices are widely used in the fabrication processes of integrated circuits, such as deposition, etching, and the like. Among them, the inductively coupled plasma (ICP) device is one of the mainstream technologies in the plasma processing device. The principle is mainly to use the RF power to drive the inductive coupling coil to generate a strong high-frequency alternating magnetic field, so that the low voltage The reaction gas is ionized to generate a plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and radicals. The active particles can undergo various physical and chemical reactions on the surface of the wafer to be processed, and the surface morphology of the wafer changes. That is, the etching process is completed; in addition, the above-mentioned active ions have higher activity than the conventional gaseous reactants, and can promote the chemical reaction between the reaction gases, that is, plasma enhanced chemical vapor deposition (PECVD) can be realized.

根據等離子體刻蝕工藝的要求，産生的等離子體通常要達到一定的溫度才能進行更好地刻蝕工藝，故在等離子體區域需設置對等離子體進行加溫的裝置。現有技術中，在等離子體處理裝置的側壁內部設置一加熱元件，通過加熱元件實現對反應腔內的等離子體的溫度控制。然而，由於反應腔的側壁材料為熱的良導體，加熱元件在加熱反應腔內部等離子體的同時也會使得反應腔外部溫度過高，同時，加熱元件提供的熱量向上、向下傳導，不僅浪費能量，同時使反應腔的其他部件溫度不可控，影響刻蝕工藝的進行。According to the requirements of the plasma etching process, the generated plasma usually reaches a certain temperature to perform a better etching process, so a device for heating the plasma is required in the plasma region. In the prior art, a heating element is disposed inside the sidewall of the plasma processing apparatus, and temperature control of the plasma in the reaction chamber is realized by the heating element. However, since the sidewall material of the reaction chamber is a good conductor of heat, the heating element heats the plasma inside the reaction chamber, and the temperature outside the reaction chamber is too high. At the same time, the heat provided by the heating element is conducted upward and downward, which is not only wasteful. The energy, while making the temperature of other parts of the reaction chamber uncontrollable, affects the progress of the etching process.

為了解决上述技術問題，本發明提供一種等離子體處理裝置，包括至少一個腔體外殼和至少一個反應腔，反應腔內設置基座用於支撑基片，所述腔體外殼包括一絕緣窗口和位於絕緣窗口下方的腔體蓋，腔體蓋下方設置腔體側壁，所述腔體蓋和所述腔體側壁之間設置一等離子體加熱環，所述等離子體加熱環內設置一加熱元件，所述加熱元件周圍設置至少一條隔熱渠道。In order to solve the above technical problems, the present invention provides a plasma processing apparatus including at least one cavity housing and at least one reaction chamber, and a susceptor is provided in the reaction chamber for supporting the substrate, the cavity housing including an insulating window and located a cavity cover under the insulating window, a cavity sidewall disposed under the cavity cover, a plasma heating ring disposed between the cavity cover and the sidewall of the cavity, and a heating element disposed in the plasma heating ring At least one insulated channel is disposed around the heating element.

優選的，所述加熱元件周圍設置至少兩條隔熱渠道，所述第一條隔熱渠道靠近所述等離子體加熱環與所述腔體蓋的接觸面，所述第二條隔熱渠道靠近所述等離子體加熱環與所述腔體側壁的接觸面，所述兩條隔熱渠道實質平行。Preferably, at least two heat insulating channels are disposed around the heating element, the first heat insulating channel is close to a contact surface of the plasma heating ring and the cavity cover, and the second heat insulating channel is adjacent to The contact surface of the plasma heating ring and the sidewall of the cavity, the two heat insulating channels are substantially parallel.

進一步的，所述加熱元件周圍還設置第三條隔熱渠道，所述第三條隔熱渠道實質垂直於所述第一條隔熱渠道和所述第二條隔熱渠道。Further, a third insulating channel is disposed around the heating element, and the third insulating channel is substantially perpendicular to the first insulating channel and the second insulating channel.

優選的，所述第三條隔熱渠道設置於所述加熱元件靠近所述反應腔外部空間的一側。Preferably, the third heat insulating channel is disposed on a side of the heating element adjacent to an outer space of the reaction chamber.

優選的，所述的第三條隔熱渠道與所述前兩條隔熱渠道相連通。Preferably, the third insulated channel is in communication with the first two insulated channels.

優選的，所述加熱元件周圍設置一條隔熱渠道，所述隔熱渠道為環繞所述加熱元件設置的弧形渠道，其設置於所述加熱元件靠近反應腔外部空間的一側。Preferably, a heat insulating channel is disposed around the heating element, and the heat insulating channel is an arc channel disposed around the heating element, and is disposed on a side of the heating element near the outer space of the reaction cavity.

優選的，所述等離子體加熱環為鋁或鋁合金材質。Preferably, the plasma heating ring is made of aluminum or aluminum alloy.

優選的，所述等離子體處理裝置為電感耦合等離子體處理裝置。Preferably, the plasma processing apparatus is an inductively coupled plasma processing apparatus.

優選的，所述等離子體加熱環包括靠近腔體蓋的上端和靠近腔體側壁的下端，所述上端徑向寬度大於所述下端徑向寬度。Preferably, the plasma heating ring includes an upper end adjacent to the cavity cover and a lower end adjacent to the sidewall of the cavity, the upper end having a radial width greater than the lower end radial width.

優選的，所述等離子體加熱環的下端和所述腔體側壁平行設置且兩者之間設置一定縫隙。Preferably, the lower end of the plasma heating ring and the sidewall of the cavity are arranged in parallel with a certain gap therebetween.

本發明的優點在於：通過設置一帶加熱元件的等離子體加熱環，實現對反應腔內的等離子體加熱，滿足刻蝕工藝對等離子體溫度的要求；在所述加熱元件的周圍設置隔熱渠道，將等離子體加熱環的加熱元件産生的熱量與周圍的部件和外部空間進行隔離，在使得熱量不被損耗的同時，保證了各個部件之間的溫度能獨立控制，便於反應工藝在不同位置對溫度的不同需求。隔熱渠道將加熱元件産生的熱量與外部空間進行隔離，能保證外部空間的溫度不會對操作人員造成威脅。The invention has the advantages that the plasma heating in the reaction chamber is realized by providing a plasma heating ring with a heating element, and the plasma temperature requirement of the etching process is satisfied; and an insulation channel is arranged around the heating element. The heat generated by the heating element of the plasma heating ring is isolated from the surrounding components and the external space, so that the heat is not lost, and the temperature between the components can be independently controlled, and the reaction process is convenient for the temperature at different positions. Different needs. The insulation channel isolates the heat generated by the heating element from the external space, ensuring that the temperature of the external space does not pose a threat to the operator.

本發明公開了一種等離子體處理裝置，為使本發明的上述目的、特徵和優點能够更為明顯易懂，下面結合附圖和實施例對本發明的具體實施方式做詳細的說明。The present invention has been described in detail with reference to the accompanying drawings and embodiments.

圖1示出本發明公開的一種等離子體處理裝置結構示意圖，尤其涉及一種電感耦合等離子體處理裝置，所述等離子體處理裝置包括腔體外殼100和反應腔101，反應腔101內設置基座150用於支撑基片200。腔體外殼包括一絕緣窗口110，絕緣窗口115上方設置電感線圈105，電感線圈105在射頻功率源（圖中未示出）的作用下産生較强的高頻交變磁場，使得低壓的反應氣體被電離産生等離子體。絕緣窗口110下方設置腔體蓋120，腔體蓋120下方設置腔體側壁140，為了保證基片200能順利進出反應腔101，腔體側壁140在大致與基座上表面處於同一水平面處設置一進出口145。腔體外殼底部設置一真空泵170，用於將反應腔內反應後的氣體排出反應腔內。腔體蓋120和腔體側壁140之間設置一等離子體加熱環130，等離子體加熱環130內設置一加熱元件，用於對反應腔101內的等離子體進行加熱。1 is a schematic structural view of a plasma processing apparatus according to the present disclosure, and more particularly to an inductively coupled plasma processing apparatus including a cavity housing 100 and a reaction chamber 101, and a susceptor 150 is disposed in the reaction chamber 101. Used to support the substrate 200. The cavity housing includes an insulating window 110. The inductor 105 is disposed above the insulating window 115. The inductor 105 generates a strong high-frequency alternating magnetic field under the action of a radio frequency power source (not shown), so that the low-pressure reactive gas The plasma is generated by ionization. A cavity cover 120 is disposed under the insulating window 110, and a cavity sidewall 140 is disposed under the cavity cover 120. To ensure that the substrate 200 can smoothly enter and exit the reaction cavity 101, the cavity sidewall 140 is disposed at a level similar to the upper surface of the base. Import and export 145. A vacuum pump 170 is disposed at the bottom of the chamber casing for discharging the reacted gas in the reaction chamber out of the reaction chamber. A plasma heating ring 130 is disposed between the cavity cover 120 and the cavity sidewall 140. A heating element is disposed in the plasma heating ring 130 for heating the plasma in the reaction chamber 101.

圖2示出腔體外殼100的局部結構示意圖，等離子體加熱環130位於腔體蓋120和腔體側壁140之間，內部設置有加熱元件135。由於腔體蓋120和腔體側壁140均為熱的良導體，加熱元件135工作時，熱量不僅提供給反應腔內部的等離子體，還會向上、向下傳導，不僅導致熱量的損耗，還會因為升高了腔體蓋120和腔體側壁140的溫度，影響刻蝕反應工藝的順利進行。同時，等離子體加熱環130與機台外部空間接觸，過多的熱量也會影響機台外部空間，對操作人員的安全造成威脅。在圖2所示的結構示意圖中，加熱元件135周圍設置隔熱渠道131、132、133，在另外的實施例中，隔熱渠道的數量可以為一條或其他數量，隔熱渠道的設置以盡可能的將加熱元件135的熱量集中到反應腔內為宗旨。在本實施例中，考慮到加工的簡易程度，採用設置三條隔熱渠道的方式，第一條隔熱渠道為在等離子體加熱環130靠近腔體蓋的一側且具有一定深度的隔熱渠道131，為方便製作，本實施例選擇將第一條隔熱渠道131設置在等離子體加熱環130和腔體蓋120的接觸面上。隔熱渠道131的寬度在保證加工和安裝的簡易性和方便性的前提下可以適當的增加，以便盡可能的將熱量與腔體蓋120隔絕。在等離子體加熱環130靠近腔體側壁140的一側設置一定深度的第二條隔熱渠道132，為方便製作，本實施例選擇將第二條隔熱渠道132設置在等離子體加熱環130和腔體側壁140的接觸面上，第二條隔熱渠道132的寬度在保證加工和安裝的簡易性和方便性的前提下可以適當的增加，以便盡可能的將熱量與腔體側壁140隔絕。第一條隔熱渠道131和第二條隔熱渠道132實質平行。隔熱渠道133實質垂直於第一條隔熱渠道131和第二條隔熱渠道132，在本實施例中隔熱渠道133可以和第一條隔熱渠道131及第二條隔熱渠道132相通。本領域技術人員容易想到是的，在另外的實施例中，三條隔熱渠道也可以是不相連通。2 shows a partial schematic view of a cavity housing 100 between a cavity cover 120 and a cavity sidewall 140 with a heating element 135 disposed therein. Since the cavity cover 120 and the cavity sidewall 140 are both good conductors of heat, when the heating element 135 is operated, heat is not only supplied to the plasma inside the reaction chamber, but also is conducted upwards and downwards, which not only causes heat loss, but also causes heat loss. Since the temperature of the cavity cover 120 and the cavity sidewall 140 is raised, the etching reaction process is smoothly performed. At the same time, the plasma heating ring 130 is in contact with the external space of the machine, and excessive heat will also affect the external space of the machine, posing a threat to the safety of the operator. In the structural diagram shown in FIG. 2, heat insulating channels 131, 132, and 133 are disposed around the heating element 135. In other embodiments, the number of heat insulating channels may be one or other quantities, and the heat insulating channels are disposed. It is possible to concentrate the heat of the heating element 135 into the reaction chamber. In this embodiment, considering the ease of processing, a method of setting three heat insulating channels is adopted, and the first heat insulating channel is an insulating channel having a certain depth on the side of the plasma heating ring 130 close to the cavity cover. 131. For convenience of fabrication, the present embodiment selects the first heat insulating channel 131 to be disposed on the contact surface of the plasma heating ring 130 and the cavity cover 120. The width of the insulating channel 131 can be appropriately increased to ensure the heat and the cavity cover 120 as much as possible while ensuring ease and convenience of processing and installation. A second insulating channel 132 of a certain depth is disposed on a side of the plasma heating ring 130 adjacent to the sidewall 140 of the cavity. For convenience of fabrication, the second insulation channel 132 is selected to be disposed in the plasma heating ring 130 and On the contact surface of the cavity sidewall 140, the width of the second insulating channel 132 can be appropriately increased to ensure ease of processing and installation, so as to isolate heat from the cavity sidewall 140 as much as possible. The first insulated channel 131 and the second insulated channel 132 are substantially parallel. The heat insulating channel 133 is substantially perpendicular to the first heat insulating channel 131 and the second heat insulating channel 132. In this embodiment, the heat insulating channel 133 can communicate with the first insulating channel 131 and the second insulating channel 132. . It will be readily apparent to those skilled in the art that in other embodiments, the three insulated channels may also be disconnected.

在反應腔101內，由於等離子體的分布範圍較大，為了保證盡可能多的等離子體溫度可控，等離子體加熱環130的高度需要和存在等離子體區域的高度相同，由於基片200上方的等離子體均參與刻蝕反應，故等離子體加熱環130需要延伸至於基片200大致位於同一水平面。在實際工藝過程中，由於等離子體直接與等離子體加熱環130接觸，等離子體很容易在等離子體加熱環130內表面形成沉澱物，為避免沉澱物對刻蝕工藝造成污染，需要定期將等離子體加熱環130取出進行表面清潔。為了减輕等離子體加熱環130的重量，方便等離子體加熱環130的卸載及安裝，本實施例設置等離子體加熱環130靠近腔體蓋120的一端為上端136，另一端為下端137，上端136的徑向寬度大於下端137的徑向寬度。為便於理解，可形象的描述等離子體加熱環130的橫截面結構示意圖形狀為倒置的“L”狀。本實施例中的等離子體加熱環130的上端136放置在腔體側壁140上方，下端137與腔體側壁140平行，為防止受熱膨脹發生變形，下端137與腔體側壁140之間設置一縫隙138。In the reaction chamber 101, since the plasma distribution range is large, in order to ensure that as much plasma temperature as possible is controllable, the height of the plasma heating ring 130 needs to be the same as the height of the plasma region, due to the upper portion of the substrate 200. The plasma is involved in the etching reaction, so the plasma heating ring 130 needs to extend until the substrate 200 is substantially at the same level. In the actual process, since the plasma is directly in contact with the plasma heating ring 130, the plasma easily forms a precipitate on the inner surface of the plasma heating ring 130. To avoid contamination of the etching process by the precipitate, it is necessary to periodically plasma. The heating ring 130 is taken out for surface cleaning. In order to reduce the weight of the plasma heating ring 130 and facilitate the unloading and mounting of the plasma heating ring 130, the end of the plasma heating ring 130 adjacent to the cavity cover 120 is the upper end 136, and the other end is the lower end 137 and the upper end 136. The radial width is greater than the radial width of the lower end 137. For ease of understanding, the cross-sectional structure of the plasma heating ring 130 can be visually depicted as an inverted "L" shape. The upper end 136 of the plasma heating ring 130 in this embodiment is placed above the cavity sidewall 140, and the lower end 137 is parallel to the cavity sidewall 140. To prevent deformation due to thermal expansion, a gap 138 is provided between the lower end 137 and the cavity sidewall 140. .

在另外的實施例中，所述的隔熱渠道可以為一條，其大致為圓弧型，環繞所述加熱元件靠近等離子體加熱環130外部空間的一側設置，該隔熱渠道將加熱元件135與上方的腔體蓋120，下方的腔體側壁140以及外部空間的熱量進行隔離，將加熱元件135的熱量主要集中於反應腔101內部對等離子體進行加熱，起到的良好的隔熱效果。In another embodiment, the heat insulating channel may be a strip, which is substantially arc-shaped, disposed around a side of the heating element adjacent to the outer space of the plasma heating ring 130, and the heat insulating channel will heat the element 135. The heat is removed from the upper cavity cover 120, the lower cavity sidewall 140 and the external space, and the heat of the heating element 135 is mainly concentrated in the interior of the reaction chamber 101 to heat the plasma, thereby providing a good heat insulation effect.

在本發明所述的實施例中，絕緣窗口110、腔體蓋120、腔體側壁140內部都可以根據工藝對硬體的需要設置加熱元件，本發明通過在等離子體加熱環130之間設置隔熱渠道，在使得熱量不被損耗的同時，保證了各個部件之間的溫度能獨立控制，便於反應工藝在不同位置對溫度的不同需求。In the embodiment of the present invention, the insulating window 110, the cavity cover 120, and the cavity sidewall 140 may be provided with heating elements according to the requirements of the process. The present invention provides a separation between the plasma heating rings 130. The heat channel ensures that the temperature between the various components can be independently controlled while the heat is not lost, which facilitates the different temperature requirements of the reaction process at different locations.

本發明雖然以較佳實施例公開如上，但其並不是用來限定本發明，任何本領域技術人員在不脫離本發明的精神和範圍內，都可以做出可能的變動和修改，因此本發明的保護範圍應當以本發明權利要求所界定的範圍為準。The present invention is disclosed in the above preferred embodiments, but it is not intended to limit the present invention, and any one skilled in the art can make possible variations and modifications without departing from the spirit and scope of the invention. The scope of protection should be determined by the scope defined by the claims of the present invention.

100‧‧‧腔體外殼
101‧‧‧反應腔
105‧‧‧電感線圈
110‧‧‧絕緣窗口
120‧‧‧腔體蓋
130‧‧‧等離子體加熱環
131、132、133‧‧‧隔熱渠道
135‧‧‧加熱元件
136‧‧‧上端
137‧‧‧下端
138‧‧‧縫隙
140‧‧‧腔體側壁
145‧‧‧進出口
150‧‧‧基座
170‧‧‧真空泵
200‧‧‧基片100‧‧‧ cavity shell
101‧‧‧Reaction chamber
105‧‧‧Inductance coil
110‧‧‧Insulated window
120‧‧‧ cavity cover
130‧‧‧ Plasma heating ring
131, 132, 133‧‧‧ insulated channels
135‧‧‧ heating element
136‧‧‧ upper end
137‧‧‧Bottom
138‧‧‧ gap
140‧‧‧ cavity sidewall
145‧‧‧Import
150‧‧‧Base
170‧‧‧Vacuum pump
200‧‧‧ substrates

通過閱讀參照以下附圖對非限制性實施例所作的詳細描述，本發明的其它特徵、目的和優點將會變得更明顯：如下附圖構成了本說明書的一部分，和說明書一起列舉了不同的實施例，以解釋和闡明本發明的宗旨。以下附圖並沒有描繪出具體實施例的所有技術特徵，也沒有描繪出部件的實際大小和真實比例。圖1示出本發明所述的等離子體處理裝置結構示意圖；圖2示出腔體外殼100的局部結構示意圖。Other features, objects, and advantages of the invention will be apparent from The examples are to explain and clarify the gist of the invention. The following figures do not depict all of the technical features of the specific embodiments, nor the actual size and true scale of the components. 1 is a schematic structural view of a plasma processing apparatus according to the present invention; and FIG. 2 is a partial structural view showing a cavity housing 100.

110‧‧‧絕緣窗口 110‧‧‧Insulated window

120‧‧‧腔體蓋 120‧‧‧ cavity cover

130‧‧‧等離子體加熱環 130‧‧‧ Plasma heating ring

131、132、133‧‧‧隔熱渠道 131, 132, 133‧‧‧ insulated channels

135‧‧‧加熱元件 135‧‧‧ heating element

136‧‧‧上端 136‧‧‧ upper end

137‧‧‧下端 137‧‧‧Bottom

138‧‧‧縫隙 138‧‧‧ gap

140‧‧‧腔體側壁 140‧‧‧ cavity sidewall

Claims

一種等離子體處理裝置，包括：一絕緣窗口和一位於絕緣窗口下方的腔體蓋，腔體蓋下方設置一腔體側壁，所述腔體蓋和所述腔體側壁之間設置一等離子體加熱環，其中所述等離子體加熱環內設置一加熱元件，所述加熱元件周圍設置至少一條隔熱渠道。A plasma processing apparatus includes: an insulating window and a cavity cover under the insulating window, a cavity sidewall disposed under the cavity cover, and a plasma heating disposed between the cavity cover and the sidewall of the cavity a ring, wherein a heating element is disposed in the plasma heating ring, and at least one heat insulating channel is disposed around the heating element.

如請求項1所述的等離子體處理裝置，其中所述加熱元件周圍設置至少兩條隔熱渠道，所述第一條隔熱渠道靠近所述等離子體加熱環與所述腔體蓋的接觸面，所述第二條隔熱渠道靠近所述等離子體加熱環與所述腔體側壁的接觸面，所述兩條隔熱渠道實質平行。The plasma processing apparatus of claim 1, wherein at least two heat insulating channels are disposed around the heating element, and the first heat insulating channel is adjacent to a contact surface of the plasma heating ring and the cavity cover. The second heat insulating channel is adjacent to a contact surface of the plasma heating ring and the sidewall of the cavity, and the two heat insulating channels are substantially parallel.

如請求項2所述的等離子體處理裝置，其中所述加熱元件周圍更設置有一第三條隔熱渠道，所述第三條隔熱渠道實質垂直於所述第一條隔熱渠道和所述第二條隔熱渠道。The plasma processing apparatus of claim 2, wherein a third insulating channel is further disposed around the heating element, the third insulating channel is substantially perpendicular to the first insulating channel and The second insulation channel.

如請求項3所述的等離子體處理裝置，其中所述第三條隔熱渠道設置於所述加熱元件靠近該等離子體處理裝置的一反應腔之外部空間的一側。The plasma processing apparatus of claim 3, wherein the third insulating channel is disposed on a side of the heating element adjacent to an outer space of a reaction chamber of the plasma processing apparatus.

如請求項4所述的等離子體處理裝置，其中所述的第三條隔熱渠道與所述前兩條隔熱渠道相連通。The plasma processing apparatus of claim 4, wherein the third insulated channel is in communication with the first two insulated channels.

如請求項1所述的等離子體處理裝置，其中所述加熱元件周圍設置一條隔熱渠道，所述隔熱渠道為環繞所述加熱元件設置的弧形渠道，其設置於所述加熱元件靠近該等離子體處理裝置的一反應腔外部空間的一側。The plasma processing apparatus of claim 1, wherein a heat insulating channel is disposed around the heating element, the heat insulating channel is an arc channel disposed around the heating element, and the heating element is disposed adjacent to the heating element One side of the outer space of a reaction chamber of the plasma processing apparatus.

如請求項1至6中任一項所述的等離子體處理裝置，其中所述等離子體加熱環為鋁或鋁合金材質。The plasma processing apparatus according to any one of claims 1 to 6, wherein the plasma heating ring is made of aluminum or an aluminum alloy.

如請求項1至6中任一項所述的等離子體處理裝置，其中所述等離子體處理裝置為電感耦合等離子體處理裝置。The plasma processing apparatus of any one of claims 1 to 6, wherein the plasma processing apparatus is an inductively coupled plasma processing apparatus.

如請求項1至6中任一項所述的等離子體處理裝置，其中所述等離子體加熱環包括一靠近腔體蓋的上端和一靠近腔體側壁的下端，所述上端徑向寬度大於所述下端徑向寬度。The plasma processing apparatus of any one of claims 1 to 6, wherein the plasma heating ring includes an upper end adjacent to the cavity cover and a lower end adjacent to the sidewall of the cavity, the upper end having a radial width greater than The lower end radial width is described.

如請求項9所述的等離子體處理裝置，其中所述等離子體加熱環的下端和所述腔體側壁平行設置且兩者之間設置一定縫隙。The plasma processing apparatus of claim 9, wherein the lower end of the plasma heating ring and the sidewall of the cavity are disposed in parallel with a certain gap therebetween.