TW201511221A - 發光二極體封裝結構及其製造方法 - Google Patents
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
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- 150000004767 nitrides Chemical class 0.000 description 1
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Abstract
一種發光二極體封裝結構,其包括基板以及設置於該基板上之發光二極體晶片和齊納二極體。所述齊納二極體表面還形成有一反射層。本發明還提供一種發光二極體封裝結構之製造方法
Description
本發明涉及一種發光二極體封裝結構及其製造方法。
相比於傳統之發光源,發光二極體(Light Emitting Diode,LED)具有重量輕、體積小、污染低、壽命長等優點,其作為一種新型之發光源,已經被越來越廣泛地應用
在一般之發光二極體封裝結構中,通常會設置一齊納二極體(Zener diode),用於防止突波或靜電造成元件電路受損。然而,傳統之發光二極體封裝結構中,齊納二極體與發光二極體晶片通常是被設置在同一平面上,這樣之設置會造成發光二極體晶片發出之光線容易被齊納二極體吸收,從而減少了發光二極體封裝結構之出光亮度。
有鑑於此,有必要提供一種出光亮度較高之發光二極體封裝結構及其製造方法。
一種發光二極體封裝結構,其包括基板以及設置於該基板上之發光二極體晶片和齊納二極體。所述齊納二極體表面還形成有一反射層。
一種發光二極體封裝結構之製造方法,其包括以下幾個步驟:
提供一基板;
將一發光二極體晶片設置於基板上;
將一齊納二極體設置於基板上;
在齊納二極體表面藉由點膠形成一反射層。
上述之發光二極體封裝結構及其製造方法中,因為齊納二極體之表面藉由點膠方式覆蓋一層反射層,該反射層可以對發光二極體芯發出之光線產生反射作用,所以可以大大減少齊納二極體對發光二極體晶片所發出之光線之吸收,從而可以提高發光二極體封裝結構之出光亮度。
圖1為本發明實施方式中之發光二極體封裝結構之俯視圖。
圖2為圖1中之發光二極體封裝結構之側視圖。
圖3至圖8為本發明實施方式中之發光二極體封裝結構之製造方法之各步驟示意圖。
請參閱圖1以及圖2,本發明實施方式提供之一種發光二極體封裝結構100包括基板10、設置於基板10上之發光二極體晶片20和齊納二極體30以及覆蓋發光二極體晶片20和齊納二極體30之封裝層40。
所述基板10大致呈一矩形之板狀結構,其包括第一電極11、第二電極12以及位於第一電極11和第二電極12之間之絕緣層13。所述第一電極11和第二電極12相互間隔,所述絕緣層13充填於第一電極11與第二電極12之間之間隙內,用於連接第一電極11與第二電極12並使兩者電絕緣。在本實施方式中,所述第一電極11為p型電極,所述第二電極12為n型電極。
所述發光二極體晶片20設置於第一電極11上,並且藉由導線分別電性連接第一電極11和第二電極12。所述齊納二極體30設置於第二電極12上,並分別電性連接第一電極11和第二電極12。
所述齊納二極體30表面藉由點膠還形成有反射層50,該反射層50覆蓋齊納二極體30,其為矽膠等可固性不透明膠體。在本實施方式中,所述反射層50內還含有反射顆粒TiO2或SiO2。
所述封裝層40形成在基板10之上表面上,並覆蓋發光二極體晶片20、齊納二極體30以及反射層50。所述封裝層40為一透明結構,其材質可為矽、環氧樹脂等。所述封裝層40中還可摻入螢光粉。所述螢光粉材質可選自石榴石(garnet)、矽酸鹽、氮化物、氮氧化物、磷化物、硫化物中之一或幾種組合之化合物。
在本發明之發光二極體封裝結構100中,因為齊納二極體30之表面藉由點膠方式覆蓋一層反射層50,該反射層50可以對發光二極體晶片20發出之光線產生反射作用,所以可以大大減少齊納二極體30對發光二極體晶片20所發出之光線之吸收,從而可以提高發光二極體封裝結構100之出光亮度。
本發明實施方式提供之發光二極體封裝結構100之製造方法包括以下幾個步驟:
步驟一:請參閱圖3以及圖4,提供一基板10。所述基板10包括第一電極11、第二電極12以及位於第一電極11和第二電極12之間之絕緣層13。所述第一電極11和第二電極12相互間隔,所述絕緣層13充填於第一電極11與第二電極12之間之間隙內,用於連接第一電極11與第二電極12並使兩者電絕緣。
步驟二:請參閱圖5以及圖6,將一發光二極體晶片20設置於基板10之第一電極11上,並且藉由導線分別電性連接第一電極11和第二電極12。
步驟三:將一齊納二極體30設置於基板10之第二電極12上,並分別電性連接第一電極11和第二電極12。
步驟四:請參閱圖7以及圖8,在齊納二極體30表面藉由點膠形成一反射層50。所述反射層50覆蓋齊納二極體30,其為矽膠等可固性不透明膠體。在本實施方式中,所述反射層50內還含有反射顆粒TiO2或SiO2。
步驟五:請接著參閱圖1以及圖2,在所述基板10之上表面上形成一封裝層40。由此完成整個發光二極體封裝結構100之製作。
100‧‧‧發光二極體封裝結構
10‧‧‧基板
20‧‧‧發光二極體晶片
30‧‧‧齊納二極體
40‧‧‧封裝層
50‧‧‧反射層
11‧‧‧第一電極
12‧‧‧第二電極
13‧‧‧絕緣層
無
10‧‧‧基板
20‧‧‧發光二極體晶片
30‧‧‧齊納二極體
40‧‧‧封裝層
50‧‧‧反射層
11‧‧‧第一電極
12‧‧‧第二電極
13‧‧‧絕緣層
100‧‧‧發光二極體封裝結構
Claims (10)
- 一種發光二極體封裝結構,其包括基板以及設置於該基板上之發光二極體晶片和齊納二極體,其改進在於:所述齊納二極體表面還形成有一反射層。
- 如申請專利範圍第1項所述之發光二極體封裝結構,其中:所述基板包括第一電極、第二電極以及位於第一電極和第二電極之間之絕緣層。
- 如申請專利範圍第2項所述之發光二極體封裝結構,其中:所述發光二極體晶片設置於第一電極上,並且藉由導線分別電性連接第一電極和第二電極,所述齊納二極體設置於第二電極上,並分別電性連接第一電極和第二電極。
- 如申請專利範圍第1項所述之發光二極體封裝結構,其中:反射層為可固性不透明膠體,反射層藉由點膠方式形成在齊納二極體表面,並覆蓋齊納二極體。
- 如申請專利範圍第4項所述之發光二極體封裝結構,其中:所述反射層內還含有反射顆粒TiO2或SiO2。
- 如申請專利範圍第1項所述之發光二極體封裝結構,其中:所述發光二極體封裝結構還包括一封裝層,所述封裝層形成在基板之上表面上,並覆蓋發光二極體晶片、齊納二極體以及反射層。
- 一種發光二極體封裝結構之製造方法,其包括以下幾個步驟:
提供一基板;
將一發光二極體晶片設置於基板上;
將一齊納二極體設置於基板上;
在齊納二極體表面藉由點膠形成一反射層。 - 如申請專利範圍第7項所述之發光二極體封裝結構之製造方法,其中:所述基板包括第一電極、第二電極以及位於第一電極和第二電極之間之絕緣層。
- 如申請專利範圍第8項所述之發光二極體封裝結構之製造方法,其中:所述發光二極體晶片設置於第一電極上,並且藉由導線分別電性連接第一電極和第二電極,所述齊納二極體設置於第二電極上,並分別電性連接第一電極和第二電極。
- 如申請專利範圍第7項所述之發光二極體封裝結構之製造方法,其中:在齊納二極體表面藉由點膠形成一反射層之步驟之後,還包括在基板之上表面上形成一封裝層之步驟。
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TW (1) | TWI511267B (zh) |
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CN105390395B (zh) * | 2015-12-02 | 2018-08-31 | 广东晶科电子股份有限公司 | 齐纳二极管的制作方法和led封装器件 |
US10770636B2 (en) * | 2018-02-14 | 2020-09-08 | Epistar Corporation | Light emitting device and manufacturing method thereof |
CN110164857B (zh) * | 2018-02-14 | 2024-04-09 | 晶元光电股份有限公司 | 发光装置 |
CN116682818A (zh) * | 2021-05-25 | 2023-09-01 | 泉州三安半导体科技有限公司 | 一种led发光装置 |
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US6054716A (en) * | 1997-01-10 | 2000-04-25 | Rohm Co., Ltd. | Semiconductor light emitting device having a protecting device |
CN101924099B (zh) * | 2009-06-11 | 2012-03-21 | 亿光电子工业股份有限公司 | 发光二极管装置 |
JP5768435B2 (ja) * | 2010-04-16 | 2015-08-26 | 日亜化学工業株式会社 | 発光装置 |
KR101028329B1 (ko) * | 2010-04-28 | 2011-04-12 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
US8575639B2 (en) * | 2011-02-16 | 2013-11-05 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
KR101812761B1 (ko) * | 2011-03-02 | 2017-12-28 | 서울반도체 주식회사 | 발광다이오드 패키지 |
KR20130057903A (ko) * | 2011-11-24 | 2013-06-03 | 엘지이노텍 주식회사 | 발광소자 패키지 |
KR102006388B1 (ko) * | 2012-11-27 | 2019-08-01 | 삼성전자주식회사 | 발광 소자 패키지 |
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2013
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CN104425694A (zh) | 2015-03-18 |
US20150060912A1 (en) | 2015-03-05 |
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