TW201506984A - Temperature control in rf chamber with heater and air amplifier - Google Patents

Abstract

Systems, methods, and computer programs are presented for controlling the temperature of a window in a semiconductor manufacturing chamber. One apparatus includes an air amplifier, a plenum, a heater, a temperature sensor, and a controller. The air amplifier is coupled to pressurized gas and generates, when activated, a flow of air. The air amplifier is also coupled to the plenum and the heater. The plenum receives the flow of air and distributes the flow of air over a window of the plasma chamber. When the heater is activated, the flow of air is heated during processing, and when the heater is not activated, the flow of air cools the window. The temperature sensor is situated about the window of the plasma chamber, and the controller is defined to activate both the air amplifier and the heater based on a temperature measured by the temperature sensor.

Description

在具備加熱器及空氣放大器之射頻腔室中的溫度控制Temperature control in a RF chamber with heater and air amplifier

本發明係關於用以控制半導體製造裝置中的溫度之方法、系統、及電腦程式。The present invention relates to methods, systems, and computer programs for controlling the temperature in a semiconductor manufacturing apparatus.

可利用電漿處理裝置將材料從基板蝕刻掉，該基板可由例如半導體或玻璃所形成。電漿處理裝置可含有一將電漿處理氣體封閉之真空腔室，該電漿處理氣體可被離子化並轉化為電漿。例如，一賦能來源(射頻(RF)、微波、或其他來源)可將能量施加至處理氣體以產生電漿。在一些電漿處理裝置中，可透過一介電窗傳輸該能量，該介電窗穿過該真空腔室。因此，該介電窗可能遭受由電磁能量所引發的熱。此外，由於處理條件所導致之電磁能量上的變化，該加熱作用可能局部化在特定的介電窗區域。介電窗可具有二加熱來源。首先，該窗的介電特性(tangent-δ)可導致射頻(RF)或微波功率的直接吸收。第二，該賦能來源所產生的電漿可間接將該窗加熱。此外，由於該來源的設計(天線結構等)及電漿狀態，該加熱作用可均勻地分佈在介電窗的各處或局部化在介電窗的特定區域。The material can be etched away from the substrate using a plasma processing apparatus, which can be formed, for example, from a semiconductor or glass. The plasma processing apparatus can include a vacuum chamber that encloses the plasma processing gas, which can be ionized and converted to a plasma. For example, an energizing source (radio frequency (RF), microwave, or other source) can apply energy to the processing gas to produce a plasma. In some plasma processing devices, the energy is transmitted through a dielectric window that passes through the vacuum chamber. Therefore, the dielectric window may be subjected to heat caused by electromagnetic energy. In addition, this heating may be localized in a particular dielectric window region due to changes in electromagnetic energy due to processing conditions. The dielectric window can have two sources of heat. First, the dielectric properties of the window (tangent-delta) can result in direct absorption of radio frequency (RF) or microwave power. Second, the plasma generated by the energizing source can indirectly heat the window. In addition, due to the design of the source (antenna structure, etc.) and the plasma state, the heating can be evenly distributed throughout the dielectric window or localized in specific areas of the dielectric window.

熱能可被動地(換言之，沒有冷卻裝置)從介電窗被移除，或以冷卻裝置(例如，液體冷卻系統或風扇冷卻系統)加以移除。液體冷卻系統可能是有效率的，但比被動冷卻或風扇冷卻系統更加昂貴。此外，更難以在遭受電磁能量的環境中實行液體冷卻系統。例如，液體冷卻可造成局部化的冷卻，而局部化的冷卻會導致熱梯度及熱裂縫。液體的介電特性不同於周圍的陶瓷導致了RF功率的非均勻傳輸。例如，該液體可能為傳導性的，而這會導致RF功率在液體中消散。該液體可能容易遭受成核作用且可能難以將其貯存在冷卻系統中。Thermal energy can be removed passively (in other words, without a cooling device) from the dielectric window or with a cooling device (eg, a liquid cooling system or a fan cooling system). Liquid cooling systems can be efficient, but more expensive than passive cooling or fan cooling systems. Furthermore, it is more difficult to implement a liquid cooling system in an environment that is subject to electromagnetic energy. For example, liquid cooling can result in localized cooling, while localized cooling can result in thermal gradients and thermal cracks. The dielectric properties of the liquid differ from the surrounding ceramics resulting in non-uniform transmission of RF power. For example, the liquid may be conductive, and this causes the RF power to dissipate in the liquid. The liquid may be susceptible to nucleation and may be difficult to store in a cooling system.

例如藉由對流，可將風扇冷卻系統用於介電窗的冷卻。然而，風扇冷卻系統可能是沒有效率的，且難以應用在相對熱負載較高的局部區域，該熱負載係由賦能來源於介電窗中所引發。具體而言，適合用於電漿處理裝置之風扇冷卻系統對於遭受高背壓時之散熱是無效率的。For example, by convection, a fan cooling system can be used for the cooling of the dielectric window. However, fan cooling systems may be inefficient and difficult to apply to localized areas of relatively high thermal load that are caused by energization from the dielectric window. In particular, fan cooling systems suitable for use in plasma processing equipment are inefficient for dissipating heat when subjected to high back pressure.

因此，有必要存在用以冷卻電漿處理裝置之介電窗的替代裝置。在此背景下產生了本發明。Therefore, it is necessary to have an alternative means for cooling the dielectric window of the plasma processing apparatus. The present invention has been produced in this context.

提出用以管理半導體製造腔室中的介電窗之溫度的系統、方法、及電腦程式。吾人應了解本發明可以許多方式加以實行，例如方法、設備、系統、裝置、或在電腦可讀媒體上之電腦程式。以下描述幾個實施例。Systems, methods, and computer programs for managing the temperature of a dielectric window in a semiconductor fabrication chamber are presented. It should be understood that the present invention can be implemented in many ways, such as a method, a device, a system, a device, or a computer program on a computer readable medium. Several embodiments are described below.

在一實施例中，一設備包括一空氣放大器(air amplifier)、一充氣室、一加熱器、一溫度感測器、及一控制器。該空氣放大器連接至加壓氣體(例如，壓縮空氣)並於啟動時產生一空氣流。該空氣放大器亦連接至該充氣室及該加熱器。該充氣室接收該空氣流並將該空氣流分佈在電漿腔室的窗上面。當加熱器啟動時，該空氣流在處理期間被加熱。該溫度感測器位於電漿腔室的該窗附近，且該控制器係用以基於溫度感測器所測量到的溫度而啟動空氣放大器及/或加熱器。In one embodiment, an apparatus includes an air amplifier, a plenum, a heater, a temperature sensor, and a controller. The air amplifier is connected to a pressurized gas (eg, compressed air) and produces an air flow upon startup. The air amplifier is also connected to the plenum and the heater. The plenum receives the air stream and distributes the air stream over the window of the plasma chamber. The air stream is heated during processing when the heater is activated. The temperature sensor is located adjacent the window of the plasma chamber and the controller is configured to activate the air amplifier and/or heater based on the temperature measured by the temperature sensor.

在另一實施例中，提供一種處理半導體配備的方法。該方法包括下列操作：首次啟動一空氣放大器，其中該空氣放大器係用以產生一空氣流；及首次啟動一連接至該空氣放大器的加熱器以加熱該空氣流。該空氣流係分佈於電漿腔室的窗上面。另外，該方法包括另一操作，用以於該窗的溫度達到第一預定值時停止該空氣放大器及加熱器。該方法包括另一操作，用以於該溫度達到第二預定值時第二次啟動該空氣放大器(沒有啟動該加熱器)以冷卻該窗。接著在該溫度低於第三預定值時啟動該空氣放大器。在一實施例中，藉由處理器執行該方法之操作。In another embodiment, a method of processing a semiconductor device is provided. The method includes the steps of first starting an air amplifier, wherein the air amplifier is for generating an air flow; and first activating a heater coupled to the air amplifier to heat the air flow. The air flow is distributed over the window of the plasma chamber. Additionally, the method includes another operation for stopping the air amplifier and heater when the temperature of the window reaches a first predetermined value. The method includes another operation for activating the air amplifier a second time (the heater is not activated) when the temperature reaches a second predetermined value to cool the window. The air amplifier is then activated when the temperature is below a third predetermined value. In an embodiment, the operation of the method is performed by a processor.

在再另一實施例中，一製造半導體的設備包括複數空氣放大器、一充氣室、複數加熱器、一或更多溫度感測器、及一控制器。複數空氣放大器連接至加壓氣體，每一空氣放大器於啟動時產生一空氣流。該充氣室包括複數區段，每一區段連接至一各別的空氣放大器，其中每一區段從各別的空氣放大器接收空氣流且每一區段將空氣流分佈於電漿腔室的窗上面。每一加熱器連接至各別的空氣放大器，使得當每一加熱器於該電漿腔室中的處理期間啟動時該空氣流被加熱。該一或更多溫度感測器位於該電漿腔室的該窗附近，且該控制器係用以基於一或更多溫度感測器所測量到的一或更多溫度而啟動每一空氣放大器及啟動每一加熱器。In still another embodiment, a device for fabricating a semiconductor includes a plurality of air amplifiers, a plenum, a plurality of heaters, one or more temperature sensors, and a controller. A plurality of air amplifiers are coupled to the pressurized gas, each generating an air flow upon startup. The plenum includes a plurality of sections, each section being coupled to a respective air amplifier, wherein each section receives air flow from a respective air amplifier and each section distributes air flow to the plasma chamber Above the window. Each heater is coupled to a respective air amplifier such that the air stream is heated as each heater is activated during processing in the plasma chamber. The one or more temperature sensors are located adjacent the window of the plasma chamber, and the controller is configured to activate each air based on one or more temperatures measured by one or more temperature sensors Amplifier and start each heater.

從以下配合隨附圖式所做出之詳細描述，將更清楚本發明的其他態樣。Other aspects of the invention will be apparent from the following detailed description of the drawings.

以下實施例描述一種方法及設備，用以控制半導體製造設備中之溫度，更具體而言，用以控制RF腔室中之介電窗之溫度。The following embodiments describe a method and apparatus for controlling the temperature in a semiconductor fabrication facility, and more particularly to control the temperature of a dielectric window in an RF chamber.

顯而易見的，本發明可被實行而無須這些特定細節其中的一些或全部。在其他情況下，為了不對本發明造成不必要地混淆，眾所周知的處理操作則沒有被詳述。It will be apparent that the invention may be practiced without some or all of these specific details. In other instances, well known processing operations have not been described in detail in order not to unnecessarily obscure the invention.

根據本文中顯示及描述之一或更多實施例，圖1示意性地描繪一電漿處理裝置。該電漿處理裝置通常包含：一真空腔室；一介電窗，該介電窗密封該真空腔室中的一開口；一能量來源；至少一空氣放大器；及至少一加熱元件。本文中將更詳細地描述該電漿處理裝置及該電漿處理裝置之操作的各樣實施例。In accordance with one or more embodiments shown and described herein, FIG. 1 schematically depicts a plasma processing apparatus. The plasma processing apparatus generally comprises: a vacuum chamber; a dielectric window sealing an opening in the vacuum chamber; an energy source; at least one air amplifier; and at least one heating element. Various embodiments of the plasma processing apparatus and operation of the plasma processing apparatus will be described in greater detail herein.

電漿處理裝置100包含一真空腔室20，用以在基板24的處理期間封閉電漿處理氣體及電漿。真空腔室20可由可被設定為基準電位之金屬材料形成。基板24可位於真空腔室20中以進行處理。真空腔室20可封閉電漿處理氣體，處理氣體可包含鹵素或鹵素元素，舉例來說，例如氟(F)、氯(Cl)、溴(Br)、碘(I)、及□(At)。此外，具體的處理氣體可包括CClF₃ 、C₄ F₈ 、C₄ F₆ 、CHF₃ 、CH₂ F₃ 、CF₄ 、HBr、CH₃ F、C₂ F₄ 、N₂ 、O₂ 、Ar、Xe、He、H₂ 、NH₃ ，SF₆ ，BCl₃ 、Cl₂ 、及其他可以被離子化的氣體。The plasma processing apparatus 100 includes a vacuum chamber 20 for enclosing the plasma processing gas and plasma during processing of the substrate 24. The vacuum chamber 20 may be formed of a metal material that can be set to a reference potential. The substrate 24 can be located in the vacuum chamber 20 for processing. The vacuum chamber 20 may enclose the plasma processing gas, and the processing gas may contain halogen or halogen elements such as, for example, fluorine (F), chlorine (Cl), bromine (Br), iodine (I), and □ (At). . In addition, specific process gases may include CClF ₃ , C ₄ F ₈ , C ₄ F ₆ , CHF ₃ , CH ₂ F ₃ , CF ₄ , HBr, CH ₃ F, C ₂ F ₄ , N ₂ , O ₂ , Ar , Xe, He, H ₂ , NH ₃ , SF ₆ , BCl ₃ , Cl ₂ , and other gases that can be ionized.

電漿處理裝置100包含一介電窗10，電磁能量可透過該介電窗而傳輸。介電窗10包含一電漿暴露表面及一空氣暴露表面14，其中該電漿暴露表面被配置為暴露於真空腔室20的內部。介電窗10係由可傳輸電磁能量(例如，具有100kHz至100MHz之頻率範圍的電磁能量)之介電材料製成。合適的介電材料包括石英、及包含例如鋁氮化物(AlN)、鋁氧化物(Al₂ O₃ )、或任何其它具有類似傳輸特性的耐火材料之陶瓷。The plasma processing apparatus 100 includes a dielectric window 10 through which electromagnetic energy can be transmitted. Dielectric window 10 includes a plasma exposed surface and an air exposed surface 14, wherein the plasma exposed surface is configured to be exposed to the interior of vacuum chamber 20. The dielectric window 10 is made of a dielectric material that can transmit electromagnetic energy (eg, electromagnetic energy having a frequency range of 100 kHz to 100 MHz). Suitable dielectric materials include quartz, and ceramics comprising, for example, aluminum nitride (AlN), aluminum oxide (Al ₂ O ₃ ), or any other refractory material having similar transfer characteristics.

一能量來源30產生足以將電漿處理氣體離子化的電磁能量。該能量來源30可包括一內線圈32及一外線圈34。吾人應注意該能量來源30可包括被形成為任何適於產生電磁能量之形狀的線圈，舉例而言，例如相對於彼此以角度的轉動而形成之多面同心部(faceted concentric segments)、螺線管狀的導體、環形的導體、或其組合。An energy source 30 produces electromagnetic energy sufficient to ionize the plasma processing gas. The energy source 30 can include an inner coil 32 and an outer coil 34. It should be noted that the energy source 30 can include coils that are formed into any shape suitable for generating electromagnetic energy, such as, for example, faceted concentric segments, spirals formed by angular rotation relative to each other. Conductor, looped conductor, or a combination thereof.

能量來源30可有能力產生寬廣功率範圍之電磁能量，舉例而言，例如在一些實施例中約50W至約20kW、在一實施例中大於約2kW、在另一實施例中約3kW、或在再另一實施例中約4.5kW。在一些實施例中，內線圈32及外線圈34彼此電導耦合。在其他實施例中，可藉由多重RF產生器為多重線圈提供電源。吾人應注意，雖然能量來源30被描繪為多線圈RF來源，該能量來源可為任何有能力產生電磁能量以產生感應耦合電漿之裝置，該裝置例如為(但不限於)：射頻(RF)來源、電子迴旋共振器(ECR)、微波喇叭、槽式天線、或螺旋電漿來源(helicon source)，該螺旋電漿來源使用環繞著圓柱窗包覆之螺旋天線。電漿處理裝置100可以可選性地包含一充氣室40，該充氣室係用以引導在介電窗10上面的空氣流。The energy source 30 can have the ability to generate electromagnetic energy over a wide power range, for example, from about 50 W to about 20 kW in some embodiments, greater than about 2 kW in one embodiment, about 3 kW in another embodiment, or In still another embodiment, about 4.5 kW. In some embodiments, inner coil 32 and outer coil 34 are electrically conductively coupled to each other. In other embodiments, multiple coils can be powered by multiple RF generators. It should be noted that while energy source 30 is depicted as a multi-coil RF source, the energy source can be any device capable of generating electromagnetic energy to produce an inductively coupled plasma, such as, but not limited to, radio frequency (RF). Source, electron cyclotron resonator (ECR), microwave horn, trough antenna, or helicon source, which uses a helical antenna wrapped around a cylindrical window. The plasma processing apparatus 100 can optionally include a plenum 40 for directing air flow over the dielectric window 10.

在電漿處理裝置100的一實施例中，真空腔室20可連接至介電窗10。例如，真空腔室20的一開口可至少一部份地被介電窗10封閉。具體而言，在電漿處理裝置100的操作期間內，介電窗10的電漿暴露表面可暴露於電漿及/或電漿處理氣體。吾人應注意，雖然介電窗10在圖1中被描繪為連接至真空腔室20的頂部，但介電窗10可封閉真空腔室20任何適於接收電磁能量的部分。In an embodiment of the plasma processing apparatus 100, the vacuum chamber 20 can be coupled to the dielectric window 10. For example, an opening of the vacuum chamber 20 can be at least partially enclosed by the dielectric window 10. In particular, the plasma exposed surface of the dielectric window 10 may be exposed to the plasma and/or plasma processing gas during operation of the plasma processing apparatus 100. It should be noted that although the dielectric window 10 is depicted in FIG. 1 as being connected to the top of the vacuum chamber 20, the dielectric window 10 can enclose any portion of the vacuum chamber 20 that is adapted to receive electromagnetic energy.

在一些實施例中，電漿處理裝置100可包括一加熱器26，該加熱器係用以加熱部分的介電窗10並減少介電窗10內的應力。其他實施例在電漿處理裝置100中可不包括加熱器26。另外，如以下將參照圖4-6更詳細地描述，其他實施例可包括一加熱器元件，該加熱器元件連接至空氣放大器以將介電窗10加熱。In some embodiments, the plasma processing apparatus 100 can include a heater 26 for heating a portion of the dielectric window 10 and reducing stress within the dielectric window 10. Other embodiments may not include heater 26 in plasma processing apparatus 100. Additionally, as will be described in more detail below with respect to Figures 4-6, other embodiments may include a heater element coupled to the air amplifier to heat the dielectric window 10.

可將能量來源30配置在真空腔室20的外面並與介電窗10相鄰。可將充氣室40設置為與能量來源30及介電窗10相鄰，俾使充氣室40與介電窗10的空氣暴露表面14為流體連通。在一實施例中，將充氣室40設置在內線圈32與外線圈34之間。Energy source 30 can be disposed outside of vacuum chamber 20 and adjacent to dielectric window 10. The plenum 40 can be disposed adjacent to the energy source 30 and the dielectric window 10 such that the plenum 40 is in fluid communication with the air exposed surface 14 of the dielectric window 10. In an embodiment, the plenum 40 is disposed between the inner coil 32 and the outer coil 34.

在操作期間，能量來源30透過介電窗10將電磁能量傳輸進真空腔室20中以將至少一部份的電漿處理氣體轉化成電漿。一部分的電磁能量被轉化為可被介電窗10吸收之熱能。具體而言，根據介電窗10的介電特性，一些電磁能量可轉變為熱，而在腔室將電漿處理氣體離子化之後另外一部分的電磁能量可被介電窗10吸收(例如，電漿可經由電漿暴露表面將介電窗10加熱)。因此，電磁能量可增加介電窗10的溫度。在一些實施例中，電磁能量係異向性的，使得不同部分的介電窗10受到不同量的電磁能量。吾人相信在介電窗10中所引發的熱可能與透過介電窗10所傳輸的電磁能量的量相關聯。例如在本文所描述的實施例中，大於約40%的電磁能量可被介電窗10吸收為熱。介電窗可至少吸收約0.4kW的電磁能量作為熱，例如在一實施例中大於約1kW、在另一實施例中約1.5kW、或在再另一實施例中約2.25kW。因此，提高溫度的區域(熱點)可能形成在受到相對較大量的由電磁能量所引發的熱之介電窗10的部分(相對於介電窗10的其他部分)。During operation, energy source 30 transmits electromagnetic energy into vacuum chamber 20 through dielectric window 10 to convert at least a portion of the plasma processing gas to plasma. A portion of the electromagnetic energy is converted into thermal energy that can be absorbed by the dielectric window 10. In particular, depending on the dielectric properties of the dielectric window 10, some of the electromagnetic energy may be converted to heat, and another portion of the electromagnetic energy may be absorbed by the dielectric window 10 after the chamber ionizes the plasma processing gas (eg, electricity) The slurry can heat the dielectric window 10 via the plasma exposed surface). Therefore, electromagnetic energy can increase the temperature of the dielectric window 10. In some embodiments, the electromagnetic energy is anisotropic such that different portions of the dielectric window 10 are subjected to different amounts of electromagnetic energy. It is believed that the heat induced in the dielectric window 10 may be related to the amount of electromagnetic energy transmitted through the dielectric window 10. For example, in the embodiments described herein, greater than about 40% of the electromagnetic energy can be absorbed by the dielectric window 10 as heat. The dielectric window can absorb at least about 0.4 kW of electromagnetic energy as heat, such as greater than about 1 kW in one embodiment, about 1.5 kW in another embodiment, or about 2.25 kW in yet another embodiment. Thus, the region of elevated temperature (hot spot) may form part of the dielectric window 10 (relative to other portions of the dielectric window 10) that is subjected to a relatively large amount of heat induced by electromagnetic energy.

電漿處理裝置100包含至少一空氣放大器60，該空氣放大器係用以將空氣提供至充氣室40。一或更多導管50將空氣放大器60連接至充氣室40。吾人應注意，雖然圖1描繪四空氣放大器60及四導管50，但電漿處理裝置100可具有足以對介電窗10提供充足冷卻的任何數量之空氣放大器60及導管50。以下描述幾個實施例，這幾個實施例包括在介電窗10上方不同位置之不同數量的充氣室。另外，一些實施例可在介電窗10上提供空氣流而無須使用充氣室。The plasma processing apparatus 100 includes at least one air amplifier 60 for providing air to the plenum 40. One or more conduits 50 connect the air amplifier 60 to the plenum 40. It should be noted that while FIG. 1 depicts four air amplifiers 60 and four conduits 50, the plasma processing apparatus 100 can have any number of air amplifiers 60 and conduits 50 sufficient to provide sufficient cooling to the dielectric window 10. Several embodiments are described below that include different numbers of plenums at different locations above the dielectric window 10. Additionally, some embodiments may provide air flow over the dielectric window 10 without the use of a plenum.

供應至充氣室40的空氣可被動地被清除。例如，可將充氣室40設置於一壓力控制腔室22內。可將該壓力控制腔室22維持在一較環境壓力更低的壓力，且充氣室40的出口44可將空氣直接清除進入壓力控制腔室22。可經由一排氣系統(未於圖1中顯示)將清除的空氣從壓力控制腔室22移除。在另一實施例中，可將該壓力控制腔室22維持在一較環境壓力更高的壓力，且充氣室40的出口44可將空氣直接清除進入壓力控制腔室22中。可經由一通氣孔(未於圖1中顯示)將清除的空氣從壓力控制腔室22中移除。在另外的實施例中，充氣室可與排氣導管(未於圖1中顯示)為流體連通以被動地將空氣排除至電漿處理裝置100外。The air supplied to the plenum 40 can be passively removed. For example, the plenum 40 can be disposed within a pressure control chamber 22. The pressure control chamber 22 can be maintained at a lower pressure than ambient pressure, and the outlet 44 of the plenum 40 can purge air directly into the pressure control chamber 22. The purged air can be removed from the pressure control chamber 22 via an exhaust system (not shown in Figure 1). In another embodiment, the pressure control chamber 22 can be maintained at a higher pressure than ambient pressure, and the outlet 44 of the plenum 40 can purge air directly into the pressure control chamber 22. The purged air can be removed from the pressure control chamber 22 via a vent (not shown in Figure 1). In further embodiments, the plenum chamber may be in fluid communication with an exhaust conduit (not shown in FIG. 1) to passively exclude air from outside of the plasma processing apparatus 100.

額外地或替代性地，可主動地將空氣從充氣室40排除。例如，一或更多空氣放大器60可與充氣室40為流體連通並用以將空氣從充氣室40移除。因此，雖然圖1將導管50描繪為只能輸入的裝置，但導管50可用以提供空氣及/或將空氣從充氣室40移除。此外，雖然圖1將空氣放大器60描繪為將空氣提供至充氣室40，但空氣放大器60的入口62可與充氣室40的出口44為流體連通以將空氣從充氣室40移除。Additionally or alternatively, air may be actively removed from the plenum 40. For example, one or more air amplifiers 60 may be in fluid communication with the plenum 40 and used to remove air from the plenum 40. Thus, while FIG. 1 depicts the conduit 50 as an input only device, the conduit 50 can be used to provide air and/or remove air from the plenum 40. Moreover, although FIG. 1 depicts air amplifier 60 as providing air to plenum 40, inlet 62 of air amplifier 60 may be in fluid communication with outlet 44 of plenum 40 to remove air from plenum 40.

以至少一空氣放大器60將空氣流注入可產生大量的背壓，而這可抑制朝向介電窗10的空氣流。根據一些實施例，充氣室40通常被加壓到至少約1英吋水柱的背壓，舉例而言，例如在一實施例中大於約2英吋水柱。此外，吾人應注意，空氣放大器60的操作不要求背壓。Injecting the air stream with at least one air amplifier 60 can generate a large amount of back pressure, which can suppress the flow of air toward the dielectric window 10. According to some embodiments, the plenum 40 is typically pressurized to a back pressure of at least about 1 inch of water column, such as, for example, greater than about 2 inches of water column in one embodiment. Furthermore, it should be noted that the operation of the air amplifier 60 does not require back pressure.

根據本文中顯示及描述的一或更多實施例，圖2示意性地描繪一充氣室。充氣室40被形成為部分封閉體且包含一或更多入口42及一或更多出口44。因此，充氣室40的入口42可接收空氣並將其引入具有背壓之壓力區域，該壓力區域至少部分地被充氣室40包圍。可藉由分隔牆48將充氣室40劃分為複數的環節46(在本文中亦稱為區段)，俾使每一環節包含至少一入口42及至少一出口44。In accordance with one or more embodiments shown and described herein, FIG. 2 schematically depicts an plenum. The plenum 40 is formed as a partial enclosure and includes one or more inlets 42 and one or more outlets 44. Thus, the inlet 42 of the plenum 40 can receive air and introduce it into a pressure region having a back pressure that is at least partially surrounded by the plenum 40. The plenum 40 can be divided into a plurality of links 46 (also referred to herein as segments) by a dividing wall 48 such that each link includes at least one inlet 42 and at least one outlet 44.

吾人應注意，雖然充氣室40被描繪為大致環形的，但可將充氣室40形成為任何適於將空氣提供至介電窗10的區域之形狀。在一實施例中，充氣室40係由惰性材料所製成，舉例而言，例如聚四氟乙烯(PTFE或” 鐵氟龍”)、聚醚醚酮(PEEK)、聚醚醯亞胺(PEI或“ULTEM”)、陶瓷、或其他任何能傳導電磁能量的材料，但是其他材料亦為可能的。It should be noted that while the plenum 40 is depicted as being generally annular, the plenum 40 can be formed into any shape suitable for providing air to the area of the dielectric window 10. In one embodiment, the plenum 40 is made of an inert material such as, for example, polytetrafluoroethylene (PTFE or "Teflon"), polyetheretherketone (PEEK), polyetherimide ( PEI or "ULTEM"), ceramic, or any other material that conducts electromagnetic energy, but other materials are also possible.

根據本文中顯示及描述的一或更多實施例，圖3示意性地描繪一充氣室環節。可將充氣室40形成為一單件體或可互相結合之多重環節。具體而言，如圖3中所描繪，一充氣室環節140可包括形成在充氣室環節140中的複數出口144。充氣室環節140可為大致上楔形的，且可用以與額外的充氣室環節140結合以封閉一大致上圓柱形的區域或一大致上環形的區域。吾人應注意，本文中描述之充氣室可為任何適於與能量來源30協作並將加壓之冷卻流提供至介電窗10或想要的區域之形狀。In accordance with one or more embodiments shown and described herein, FIG. 3 schematically depicts a plenum session. The plenum 40 can be formed as a single piece or as multiple links that can be joined to each other. Specifically, as depicted in FIG. 3, a plenum section 140 can include a plurality of outlets 144 formed in the plenum section 140. The plenum section 140 can be generally wedge-shaped and can be used in conjunction with an additional plenum section 140 to enclose a substantially cylindrical region or a generally annular region. It should be noted that the plenum described herein can be any shape suitable for cooperating with the energy source 30 and providing a pressurized cooling flow to the dielectric window 10 or desired area.

根據一實施例，圖4A繪示一加熱器元件，該加熱器元件連接至空氣放大器以加熱提供至介電窗的空氣流。如上面參照圖1所述，該電漿處理裝置100包含至少一空氣放大器60，用以將空氣提供至充氣室40或直接提供至腔室窗10。每一空氣放大器60包含：一入口，用以接收輸入空氣72；一排氣部64，用以輸出空氣70；及一控制輸入端66，用以接收加壓空氣68(換言之，潔淨乾燥空氣、壓縮空氣)。雖然不受限於任何特定理論，但根據白努利定律(Bernoulli's principle)和康達效應(Coanda effect)，吾人相信注射到控制輸入端66內的加壓空氣68提供了相對大量的空氣70(相較於加壓空氣68本身)。當加熱器74沒有啟動(例如，關閉)時將空氣70的流動做為冷卻空氣使用，而當加熱器74啟動(例如，開啟)時則做為加熱空氣以將冷卻的窗加熱。在一實施例中，充氣室40係環形的且位於內線圈32與外線圈34之間。吾人應注意，雖然圖4A中只顯示一空氣放大器60，但其他空氣放大器可連接至每一連接至充氣室40的導管50。According to an embodiment, FIG. 4A illustrates a heater element coupled to an air amplifier to heat a flow of air provided to the dielectric window. As described above with reference to FIG. 1, the plasma processing apparatus 100 includes at least one air amplifier 60 for providing air to the plenum 40 or directly to the chamber window 10. Each air amplifier 60 includes an inlet for receiving input air 72, a venting portion 64 for outputting air 70, and a control input 66 for receiving pressurized air 68 (in other words, clean dry air, Compressed air). While not being bound by any particular theory, according to Bernoulli's principle and the Coanda effect, it is believed that the pressurized air 68 injected into the control input 66 provides a relatively large amount of air 70 ( Compared to the pressurized air 68 itself). The flow of air 70 is used as cooling air when heater 74 is not activated (eg, turned off), and heated air to heat the cooled window when heater 74 is activated (eg, turned on). In an embodiment, the plenum 40 is annular and is located between the inner coil 32 and the outer coil 34. It should be noted that although only one air amplifier 60 is shown in FIG. 4A, other air amplifiers may be coupled to each of the conduits 50 that are coupled to the plenum 40.

在一實施例中，在開始處理基板之前啟動(例如，開啟)加熱器元件74以將該窗提升到一預定的溫度。一旦該窗達到預定的溫度，停用(例如，關閉)加熱器元件74，並且在腔室中供應RF以開始電漿處理。在一實施例中，在基板處理操作的期間內藉由溫度感測器監控該窗的溫度，並且在該溫度達到一第二預定溫度時，啟動空氣放大器60(但沒有啟動加熱器元件74)以將冷卻空氣70提供至TCP窗10。In an embodiment, the heater element 74 is activated (eg, turned on) to raise the window to a predetermined temperature prior to beginning processing of the substrate. Once the window reaches a predetermined temperature, the heater element 74 is deactivated (eg, turned off) and RF is supplied in the chamber to begin the plasma treatment. In one embodiment, the temperature of the window is monitored by a temperature sensor during the substrate processing operation, and when the temperature reaches a second predetermined temperature, the air amplifier 60 is activated (but the heater element 74 is not activated). Cooling air 70 is provided to the TCP window 10.

在該窗冷卻至一第三預定溫度之後，停用空氣放大器60。如此一來，窗10的溫度被維持在一溫度範圍內，避免了窗10上可導致破裂或故障的熱應力。以提供至該窗的空氣流來控制溫度的能力給了設計工程師對於腔室處理的更好控制。例如，在一操作步驟期間的目標係將該窗維持在120°C以下。然而，藉由使用本發明，吾人具有更有效地冷卻該窗的能力，使得該腔室處理可在更低的溫度運作，例如60°C、80°C、50°C與100°C之間的範圍、等。After the window is cooled to a third predetermined temperature, the air amplifier 60 is deactivated. As a result, the temperature of the window 10 is maintained within a temperature range, avoiding thermal stresses on the window 10 that can cause cracking or failure. The ability to control temperature with air flow to the window gives the design engineer better control over chamber processing. For example, the target during an operational step maintains the window below 120 °C. However, by using the present invention, we have the ability to more effectively cool the window so that the chamber process can operate at lower temperatures, such as between 60 ° C, 80 ° C, 50 ° C and 100 ° C. The scope, and so on.

該加壓空氣68(例如，壓縮空氣)可以一相對較高的速度(相較於空氣放大器60外的空氣)進入空氣放大器60。可將該加壓空氣68引向空氣放大器60的排氣部64。根據康達效應，加壓空氣68可實質上沿著空氣放大器60的環形邊界行進。The pressurized air 68 (e.g., compressed air) can enter the air amplifier 60 at a relatively high speed (compared to air outside of the air amplifier 60). This pressurized air 68 can be directed to the exhaust portion 64 of the air amplifier 60. According to the Coanda effect, the pressurized air 68 can travel substantially along the annular boundary of the air amplifier 60.

該空氣放大器60可用至少約20 cfm的速率提供合適的量之空氣70，舉例而言，例如在一實施例中約20 cfm至約3000 cfm，在另一實施例中約25 cfm至約900 cfm，在再另一實施例中約30 cfm至約230 cfm，或在另外一實施例中約125 cfm至約230 cfm。The air amplifier 60 can provide a suitable amount of air 70 at a rate of at least about 20 cfm, such as, for example, from about 20 cfm to about 3000 cfm in one embodiment, and from about 25 cfm to about 900 cfm in another embodiment. In still another embodiment, from about 30 cfm to about 230 cfm, or in another embodiment from about 125 cfm to about 230 cfm.

在一實施例中，至少一空氣放大器60經由一或更多導管50與充氣室40為流體連通。該一或更多導管50可由惰性材料所形成，舉例而言，例如鐵氟龍、聚醚醚酮(PEEK)、聚醚醯亞胺(ULTEM)、陶瓷、或其他任何能傳導電磁能量的材料。在一些實施例中利用非傳導性的材料。例如，若使用微波來源以產生電漿，則導管件可由金屬製成。In an embodiment, at least one air amplifier 60 is in fluid communication with the plenum 40 via one or more conduits 50. The one or more conduits 50 may be formed from an inert material such as, for example, Teflon, polyetheretherketone (PEEK), polyetherimide (ULTEM), ceramic, or any other material capable of conducting electromagnetic energy. . Non-conductive materials are utilized in some embodiments. For example, if a microwave source is used to create a plasma, the conduit member can be made of metal.

每一導管50可包括一放大器孔，該放大器孔與空氣放大器60的排氣部為流體連通，且一充氣室孔與充氣室40之入口為流體連通。因此，空氣放大器60可經由導管50及充氣室40將冷卻空氣或加熱空氣供應至介電窗10。Each conduit 50 can include an amplifier aperture in fluid communication with the exhaust of air amplifier 60 and a plenum aperture in fluid communication with the inlet of plenum 40. Therefore, the air amplifier 60 can supply cooling air or heated air to the dielectric window 10 via the duct 50 and the plenum 40.

根據一實施例，圖4B繪示一加熱器元件，該加熱器元件係串接在空氣放大器與附接至充氣室的導管之間。該加熱器元件可串接在空氣放大器60之前或之後。圖4A繪示一實施例，其中該加熱器元件位於空氣放大器60的前面，換言之，輸入空氣72在進入空氣放大器60之前通過加熱器元件。In accordance with an embodiment, FIG. 4B illustrates a heater element that is coupled in series between an air amplifier and a conduit attached to the plenum. The heater element can be connected in series before or after the air amplifier 60. 4A illustrates an embodiment in which the heater element is located in front of the air amplifier 60, in other words, the input air 72 passes through the heater element before entering the air amplifier 60.

在圖4B的實施例中，加熱器元件74係串接在空氣放大器60與導管50之間。在此情況下，輸入空氣72進入空氣放大器，且從空氣放大器60出來的輸出空氣接著在通往導管50之前被加熱。In the embodiment of FIG. 4B, heater element 74 is coupled in series between air amplifier 60 and conduit 50. In this case, the input air 72 enters the air amplifier, and the output air from the air amplifier 60 is then heated prior to leading to the conduit 50.

另外，如圖4A中所繪示，充氣室40可直接與窗10接觸。在其他實施例中，可能將充氣室40與窗10間隔開來，俾使充氣室底下的空氣流可以在窗10上傳播。充氣室40與窗10之間的偏移距離可為任何適於促進介電窗10之有效冷卻的距離，舉例而言，例如在一實施例中大於約0.25mm，或在另一實施例中約2mm。圖4B繪示將充氣室40與窗10間隔開來的實施例，但其他實施例可具有與窗10接觸之充氣室40。Additionally, as depicted in FIG. 4A, the plenum 40 can be in direct contact with the window 10. In other embodiments, the plenum 40 may be spaced from the window 10 such that air flow underneath the plenum may propagate over the window 10. The offset distance between the plenum 40 and the window 10 can be any distance suitable to facilitate efficient cooling of the dielectric window 10, such as, for example, greater than about 0.25 mm in one embodiment, or in another embodiment. About 2mm. 4B illustrates an embodiment in which the plenum 40 is spaced from the window 10, but other embodiments may have a plenum 40 in contact with the window 10.

根據一實施例，圖5繪示直接在介電窗上的空氣流供應而無須充氣室。在一實施例中，將空氣引導穿過導管並供應在介電窗10上而無須充氣室40。例如，該空氣流在導管50的底部朝著窗10離開導管50，導致離開導管的空氣與窗10接觸。According to an embodiment, Figure 5 illustrates the supply of air flow directly over the dielectric window without the need for an plenum. In an embodiment, air is directed through the conduit and supplied to the dielectric window 10 without the need for the plenum 40. For example, the air flow exits the conduit 50 toward the window 10 at the bottom of the conduit 50, causing air exiting the conduit to contact the window 10.

在一些實施例中，可以有直接從導管供應至該窗的空氣與經由充氣室供應至該窗的空氣之混合體。下面參照圖7D提供一範例。In some embodiments, there may be a mixture of air supplied directly from the conduit to the window and air supplied to the window via the plenum. An example is provided below with reference to Figure 7D.

吾人應注意，圖4A、4B、及5中所繪示之實施例為示例性的。其他實施例可利用不同的導管及充氣室、或將充氣室佈置於該窗上的其他位置、等。因此圖4A、4B、及5中繪示的實施例不應被詮釋為排他性或限制性的，而是示例性或說明性的。It should be noted that the embodiments illustrated in Figures 4A, 4B, and 5 are exemplary. Other embodiments may utilize different conduits and plenums, or other locations where the plenums are placed on the window, and the like. The embodiments illustrated in Figures 4A, 4B, and 5 are therefore not to be construed as exclusive or limiting, but illustrative or illustrative.

根據一實施例，圖6繪示一具有複數充氣室之腔室。在一實施例中，基板之直徑為300mm，但相同的原理適用於任何尺寸的晶圓，例如450mm。圖6繪示一腔室，該腔室具有二線圈(內線圈32及外線圈34)、及二充氣室(內充氣室40及外充氣室86)。吾人應注意，在圖6中導管50位於空氣放大器60後面，但為了不對腔室的細節造成混淆而將其省略。According to an embodiment, FIG. 6 illustrates a chamber having a plurality of plenums. In one embodiment, the substrate has a diameter of 300 mm, but the same principles apply to wafers of any size, such as 450 mm. 6 illustrates a chamber having two coils (inner coil 32 and outer coil 34) and two plenums (inner plenum 40 and outer plenum 86). It should be noted that the conduit 50 is located behind the air amplifier 60 in Figure 6, but is omitted in order not to obscure the details of the chamber.

腔室100包括一RF產生器108，該RF產生器連接至一匹配網路110，該匹配網路將RF功率提供至TCP腔室。另外，該腔室包括一第二RF產生器122，該第二RF產生器連接至一匹配網路120，該匹配網路將RF功率提供至腔室中的底部電極。The chamber 100 includes an RF generator 108 coupled to a matching network 110 that provides RF power to the TCP chamber. Additionally, the chamber includes a second RF generator 122 coupled to a matching network 120 that provides RF power to the bottom electrode in the chamber.

系統控制器104包括一電腦程式以管理腔室的操作。該電腦程式接收一電漿配方設定106(例如，在一電腦可讀媒體中)，該電漿配方設定決定了用以執行腔室中每一步驟的設定以處理基板。系統控制器104連接至腔室的不同元件且可以控制這些不同元件如何運作，例如開啟或關閉RF功率、啟動或停止空氣放大器或加熱器、將電漿氣體引入腔室中、等。圖6中顯示一些來自系統控制器104的連線，但是為了不對圖6中的細節造成混淆，其他來自系統控制器104的連線已被省略。System controller 104 includes a computer program to manage the operation of the chamber. The computer program receives a plasma recipe setting 106 (e.g., in a computer readable medium) that determines the settings used to perform each step in the chamber to process the substrate. System controller 104 is coupled to different components of the chamber and can control how these different components operate, such as turning RF power on or off, starting or stopping an air amplifier or heater, introducing plasma gas into the chamber, and the like. Some connections from the system controller 104 are shown in Figure 6, but other connections from the system controller 104 have been omitted in order not to confuse the details in Figure 6.

在一實施例中，調節器82設置在壓縮空氣來源與空氣放大器或加熱器之間。該系統控制器可操作以控制調節器82以控制供給至空氣放大器的加壓空氣的量。在一實施例中，調節器82具有二狀態：開啟及關閉。在開啟狀態中，調節器82讓加壓空氣80進入空氣放大器或加熱器，而沒有對空氣流提供任何阻力。在關閉狀態中，沒有空氣流被提供至空氣放大器或加熱器。在其他實施例中，調節器82可具有複數狀態，每一狀態將一不同量的加壓空氣82提供至空氣放大器60。如此一來，藉由基於介電窗的溫度而提供不同量的空氣，系統控制器104可以更好地控制介電窗上的溫度。例如，當介電窗達到非常高的溫度時，系統控制器可啟動調節器82以提供盡可能多的空氣，而溫度較低時系統控制器可啟動調節器82以提供較少量的空氣。In an embodiment, the regulator 82 is disposed between the source of compressed air and the air amplifier or heater. The system controller is operative to control the regulator 82 to control the amount of pressurized air supplied to the air amplifier. In an embodiment, the regulator 82 has two states: on and off. In the open state, regulator 82 allows pressurized air 80 to enter the air amplifier or heater without providing any resistance to air flow. In the off state, no air flow is supplied to the air amplifier or heater. In other embodiments, the regulator 82 can have a plurality of states, each state providing a different amount of pressurized air 82 to the air amplifier 60. As such, the system controller 104 can better control the temperature on the dielectric window by providing different amounts of air based on the temperature of the dielectric window. For example, when the dielectric window reaches a very high temperature, the system controller can activate the regulator 82 to provide as much air as possible, while the system controller can activate the regulator 82 to provide a smaller amount of air when the temperature is lower.

一或更多溫度感測器84將熱的讀數提供至系統控制器以實行想要的溫度管理程式。在一實施例中，每一調節器可獨立於腔室中的其他調節器而啟動，因此對於該系統控制器在該窗的不同區域提供了更好的溫度調整。例如，若該窗的中央區域變得較想要的更熱，但同時該窗的外部區域正以想要的溫度運作，系統控制器104可啟動控制內充氣室40上方之空氣放大器的調節器，但不啟動連接至外充氣室86之空氣放大器。相似地，若只有該窗的中央區域的一區段變得較想要的更熱，系統控制器104可啟動連接至單一區段的空氣放大器，而不是啟動全部連接至充氣室之空氣放大器的調節器。One or more temperature sensors 84 provide thermal readings to the system controller to implement the desired temperature management program. In an embodiment, each regulator can be activated independently of other regulators in the chamber, thus providing better temperature adjustment for different regions of the window for the system controller. For example, if the central region of the window becomes hotter than desired, but at the same time the outer region of the window is operating at the desired temperature, the system controller 104 can initiate a regulator that controls the air amplifier above the inner plenum 40. However, the air amplifier connected to the outer plenum 86 is not activated. Similarly, if only a segment of the central region of the window becomes hotter than desired, system controller 104 can initiate an air amplifier connected to a single segment instead of initiating an air amplifier that is all connected to the plenum. Regulator.

圖7A-7D繪示幾個利用壓縮空氣冷卻該腔室窗的不同配置之實施例。根據本發明的一實施例，圖7A為用於蝕刻操作之電漿處理系統的俯視圖。如上面所述，TCP線圈顯示為包括一內線圈(IC) 32、及一外線圈(OC) 34。根據本發明的一實施例，提供圖7A中的圖式以顯示與腔室102中所用之TCP線圈的內及外線圈其中每一者相關聯之環形繞組、及用以冷卻或加熱該介電窗之元件的相對位置。吾人應了解其他類型之線圈配置亦為可能的。7A-7D illustrate several embodiments of different configurations for cooling the chamber window with compressed air. 7A is a top plan view of a plasma processing system for an etch operation, in accordance with an embodiment of the present invention. As described above, the TCP coil is shown to include an inner coil (IC) 32 and an outer coil (OC) 34. In accordance with an embodiment of the present invention, the diagram of FIG. 7A is provided to display a toroidal winding associated with each of the inner and outer coils of the TCP coil used in chamber 102, and to cool or heat the dielectric The relative position of the components of the window. We should be aware that other types of coil configurations are also possible.

相對於用以冷卻或加熱該介電窗之元件(空氣放大器68、加熱器67、及充氣室40)而繪示線圈端部之間的連線。亦有可能使用一具有圓頂類型結構、及扁平線圈分佈以外的其他線圈類型結構之立體線圈。依據與TCP線圈的幾何形狀相關聯之配置，可調整充氣室及連接至充氣室之導管的位置與形狀。The line between the ends of the coil is shown relative to the elements (air amplifier 68, heater 67, and plenum 40) used to cool or heat the dielectric window. It is also possible to use a three-dimensional coil having a dome type structure and a coil type structure other than the flat coil distribution. Depending on the configuration associated with the geometry of the TCP coil, the position and shape of the plenum and the conduit connected to the plenum can be adjusted.

在圖7A顯示之實施例中，具有四空氣放大器：二者位於腔室的一側，而另外二者位於腔室的對面一側。如此一來，四導管將空氣提供至充氣室40的各別區段。在其他實施例中，空氣放大器的位置可能變化，例如在腔室的每一側具有一空氣放大器、在腔室的相同一側具有全部的空氣放大器、等。因此，在一實施例中，可調整每一導管與充氣室之間的連接點以容納該幾何形狀，使得所有導管可連接至位於腔室外面的空氣放大器。In the embodiment shown in Figure 7A, there are four air amplifiers: both on one side of the chamber and the other two on the opposite side of the chamber. As such, the four conduits provide air to the respective sections of the plenum 40. In other embodiments, the position of the air amplifier may vary, such as having an air amplifier on each side of the chamber, having all of the air amplifiers on the same side of the chamber, and the like. Thus, in an embodiment, the connection point between each conduit and the plenum can be adjusted to accommodate the geometry such that all conduits can be connected to an air amplifier located outside the chamber.

根據一實施例，圖7B繪示一具有三線圈的450mm腔室。為了不對圖7B造成混淆，一些連線及元件已為了簡化描述而省略。在一實施例中，顯示之導管其中每一者連接至一空氣放大器，該空氣放大器可供應冷或暖空氣。冷卻及加熱結構702包括空氣放大器、空氣放大器調節器、加熱器、溫度控制、等。系統控制器104連接至腔室中的不同元件以啟動或停止該介電窗上之空氣流，其中該空氣流可為熱或冷。According to an embodiment, Figure 7B illustrates a 450 mm chamber having three coils. In order not to obscure FIG. 7B, some of the wiring and components have been omitted for simplicity of description. In one embodiment, each of the conduits shown is coupled to an air amplifier that can supply cold or warm air. The cooling and heating structure 702 includes an air amplifier, an air amplifier regulator, a heater, temperature control, and the like. System controller 104 is coupled to different components in the chamber to initiate or deactivate air flow over the dielectric window, where the air flow can be hot or cold.

圖7B中之腔室包括三線圈：內線圈、中線圈、及外線圈。此外，該腔室包括一內充氣室及一外充氣室。內充氣室位於內線圈與中線圈之間，而外充氣室位於中線圈與外線圈之間。藉由在不同區域具有二不同充氣室，系統控制器104可以在介電窗上提供更好的溫度控制。一或更多溫度感測器實質上圍繞著介電窗分佈以提供不同區域之溫度測量。在一實施例中，只使用一溫度感測器，而在其他實施例中，充氣室的每一區段或環節各別具有與其關聯之溫度感測器，但其他的溫度感測器配置亦為可能的。The chamber of Figure 7B includes three coils: an inner coil, a middle coil, and an outer coil. Additionally, the chamber includes an inner plenum and an outer plenum. The inner plenum is located between the inner coil and the inner coil, and the outer plenum is located between the inner coil and the outer coil. The system controller 104 can provide better temperature control on the dielectric window by having two different plenums in different areas. One or more temperature sensors are distributed substantially around the dielectric window to provide temperature measurements for different regions. In one embodiment, only one temperature sensor is used, while in other embodiments, each section or link of the plenum has a temperature sensor associated therewith, but other temperature sensor configurations are also As possible.

在一實施例中，內充氣室包括四不同區段而外充氣室包括八不同區段，這使得到外充氣室的空氣流更好控制(考慮到外充氣室較大的直徑)。其他實施例的每一充氣室可利用不同數量的區段，例如一、二、三、六、等。In one embodiment, the inner plenum includes four different sections and the outer plenum includes eight different sections, which allows for better control of air flow to the outer plenum (considering the larger diameter of the outer plenum). Each of the plenums of other embodiments may utilize a different number of segments, such as one, two, three, six, and the like.

在圖7B顯示之實施例中，充氣室的每一區段具有一關聯的溫度感測器、空氣放大器、及加熱器。系統控制器104中的溫度控制程式監控從不同溫度感測器得到的測量結果，並啟動或停止空氣放大器及加熱器以將與各別區段關聯之每一區域維持在想要的溫度。然而，其他溫度控制方法亦為可能的，例如同時開啟或關閉空氣放大器，或同時開啟或關閉與充氣室其中一者關聯的所有空氣放大器。In the embodiment shown in Figure 7B, each section of the plenum has an associated temperature sensor, air amplifier, and heater. A temperature control program in system controller 104 monitors the measurements obtained from the different temperature sensors and activates or stops the air amplifiers and heaters to maintain each zone associated with each segment at a desired temperature. However, other temperature control methods are also possible, such as turning the air amplifier on or off at the same time, or simultaneously turning all air amplifiers associated with one of the plenums on or off.

圖7C提出一腔室之俯視圖，該腔室具有三線圈及三充氣室。為了不對構造的細節造成混淆，一些通往冷卻及加熱結構702的連線已被省略。三充氣室及線圈為環形的且在該處理腔室上從中央向該窗的邊緣互相交替。Figure 7C presents a top view of a chamber having three coils and three plenums. In order not to confuse the details of the construction, some of the connections to the cooling and heating structure 702 have been omitted. The three plenums and coils are annular and alternate from the center to the edge of the window on the processing chamber.

在一實施例中，內充氣室具有四區段，中充氣室具有六區段，且外充氣室具有八區段，然而每充氣室亦可能具有其他數量之區段。三不同充氣室的使用使得吾人可以微調該窗上的溫度控制。如上面所述，基於從實質上位於該介電窗周圍之溫度感測器所得到的溫度讀數，可一次全部啟動或分別啟動連接至不同區段的空氣放大器。In one embodiment, the inner plenum has four sections, the middle plenum has six sections, and the outer plenum has eight sections, although each plenum may have other numbers of sections. The use of three different plenums allows us to fine tune the temperature control on the window. As described above, based on temperature readings obtained from temperature sensors substantially located around the dielectric window, the air amplifiers connected to the different sections can be activated all at once or separately.

在另一未顯示於圖7C的實施例中，通到不同充氣室的導管可分享來自空氣放大器其中一或更多者之空氣。例如，在一實施例中，二導管分享一空氣放大器製造的流動，而在其他實施例中，可將多於二的導管連接至相同的空氣放大器。在兩區段分享一空氣放大器的情況下，可利用相同的導管將空氣放大器連接至二不同的區段，該導管具有二離開出口而不是一離開出口，每一區段一出口。In another embodiment not shown in Figure 7C, conduits leading to different plenums may share air from one or more of the air amplifiers. For example, in one embodiment, the two conduits share a flow made by an air amplifier, while in other embodiments more than two conduits can be connected to the same air amplifier. In the case where two sections share an air amplifier, the same conduit can be used to connect the air amplifier to two different sections, the duct having two exit outlets instead of one exit exit, one section each exit.

圖7D繪示一腔室，該腔室具有二線圈、二空氣放大器、及複數導管，其中該導管直接在該窗上提供空氣流而無須充氣室。在一些實施例中，至少一空氣放大器可無須充氣室而使用。圖7D中繪示之實施例包括三線圈及二充氣室，第一充氣室位在內線圈與中線圈之間，而第二充氣室位在外線圈外面。因此，複數導管將空氣流提供至該窗的中央(在中與外線圈之間)而無需使用充氣室。Figure 7D illustrates a chamber having two coils, two air amplifiers, and a plurality of conduits, wherein the conduit provides air flow directly on the window without the need for a plenum. In some embodiments, at least one air amplifier can be used without the need for a plenum. The embodiment illustrated in Figure 7D includes a three coil and a second plenum, the first plenum being positioned between the inner and middle coils and the second plenum being positioned outside of the outer coil. Thus, the plurality of conduits provide air flow to the center of the window (between the middle and outer coils) without the use of a plenum.

在一實施例中，將空氣供給至該窗之導管的輸出端被定位為與介電窗10的空氣暴露表面14垂直。因此，可將至少一空氣放大器60的排氣部64相對於介電窗10而定位，使得冷卻空氣70沿著本質上與介電窗10之空氣暴露表面14相垂直的路徑流動。在另一未顯示之實施例中，將至少一空氣放大器定位為與介電窗10之空氣暴露表面14成一傾斜角α。因此，可將該至少一空氣放大器60的排氣部64相對於介電窗10而定位，使得冷卻空氣70沿著與介電窗10之空氣暴露表面14對準成一傾斜角α的路徑流動。吾人應注意，該傾斜角α可為適於控制介電窗10之溫度的任何角度。In an embodiment, the output of the conduit that supplies air to the window is positioned perpendicular to the air exposed surface 14 of the dielectric window 10. Accordingly, the exhaust portion 64 of the at least one air amplifier 60 can be positioned relative to the dielectric window 10 such that the cooling air 70 flows along a path that is substantially perpendicular to the air exposed surface 14 of the dielectric window 10. In another embodiment not shown, the at least one air amplifier is positioned at an oblique angle a to the air exposed surface 14 of the dielectric window 10. Accordingly, the exhaust portion 64 of the at least one air amplifier 60 can be positioned relative to the dielectric window 10 such that the cooling air 70 flows along a path that is aligned with the air exposed surface 14 of the dielectric window 10 at an oblique angle a. It should be noted that the angle of inclination α can be any angle suitable for controlling the temperature of the dielectric window 10.

吾人應注意，圖7A-7D中所繪示之實施例為示例性的。其他實施例可利用不同數量的線圈、充氣室、導管、區段、等。因此圖7A-7D中所繪示之實施例不應被詮釋為排他性或限制性的，而是示例性或說明性的。It should be noted that the embodiments illustrated in Figures 7A-7D are exemplary. Other embodiments may utilize different numbers of coils, plenums, conduits, sections, and the like. The embodiments illustrated in Figures 7A-7D are therefore not to be construed as limiting or limiting, but illustrative or illustrative.

圖8為一方法的流程圖，該方法係用以在處理期間管理該窗的溫度。在操作802中，在操作804中開啟空氣放大器之前開啟加熱器。因此，從空氣放大器出去的空氣將會是加熱的空氣。從操作804，該方法移動至操作806，其中進行一檢查以判定介電窗之溫度t 是否已經達到需要的加熱溫度t _s 。該方法在操作806中重複檢查該窗的溫度直到溫度t 達到需要的加熱溫度t _s ，接著該方法繼續進行至操作808，其中該加熱器及空氣放大器被關閉。Figure 8 is a flow diagram of a method for managing the temperature of the window during processing. In operation 802, the heater is turned on before the air amplifier is turned on in operation 804. Therefore, the air that exits the air amplifier will be heated air. From operation 804, the process moves to operation 806, where a check performed to determine whether the temperature t of the dielectric window has reached the desired heating temperature t _s. The method is repeated to check the operation of the window 806 until the temperature reaches the heating temperature t _S t required temperature, then the method proceeds to operation 808, wherein the amplifier is turned off and the air heater.

從操作808，該方法移動至操作810，其中開始腔室中的基板處理(例如，開啟RF功率並於腔室中點燃電漿)。從操作810，該方法移動至操作812，其中進行一檢查以判定介電窗之溫度t 是否高於高臨界值溫度t _h 。若溫度t高於溫度t _h ，則該方法移動至操作814，不然該方法則移動至操作816。From operation 808, the method moves to operation 810 where substrate processing in the chamber is initiated (eg, turning on RF power and igniting plasma in the chamber). From operation 810, the process moves to operation 812, where a check is made to perform determination of the dielectric window temperature t is higher than the high temperature threshold value t _h. If the temperature t is above the temperature t _h , then the method moves to operation 814, otherwise the method moves to operation 816.

在操作814中，除非空氣放大器已經打開，否則將空氣放大器開啟。從操作814，該方法移動至操作816，其中進行一檢查以判定介電窗之溫度t 是否低於一低臨界值溫度t _l 。若該溫度t 低於溫度t _l ，則該方法移動至操作818，但是若該溫度t 不低於溫度t _l ，則該方法移動至操作820。In operation 814, the air amplifier is turned on unless the air amplifier has been turned on. From operation 814, the process moves to operation 816, where a check performed to determine whether the temperature t of the dielectric window is below a low threshold temperature t _l. If the temperature t is below the temperature t _l , the method moves to operation 818, but if the temperature t is not below the temperature t _l , the method moves to operation 820 .

在操作818中，除非空氣放大器已經被關掉，否則將空氣放大器關閉。該方法從操作818移動至操作820，其中進行一檢查以判定基板之處理是否完成。若處理已完成，該方法移動至操作822以終止該基板的處理，但是若該處理尚未完成，則該方法往回移動至操作812以重複上述之溫度檢查。In operation 818, the air amplifier is turned off unless the air amplifier has been turned off. The method moves from operation 818 to operation 820 where a check is made to determine if the processing of the substrate is complete. If the process has been completed, the method moves to operation 822 to terminate the processing of the substrate, but if the process has not been completed, the method moves back to operation 812 to repeat the temperature check described above.

根據一實施例，圖9為一方法之流程圖，該方法係用以管理該腔室窗之溫度。在操作902中，啟動一空氣放大器，該空氣放大器可操作以在電漿製造腔室之介電窗上面產生空氣流。In accordance with an embodiment, FIG. 9 is a flow diagram of a method for managing the temperature of the chamber window. In operation 902, an air amplifier is activated that is operable to generate an air flow over the dielectric window of the plasma fabrication chamber.

從操作902，該方法移動至操作904，其中啟動一連接至空氣放大器之加熱器。一旦加熱器啟動(例如，開啟)，提供至該電漿腔室上的介電窗之空氣流將包括加熱的空氣。From operation 902, the method moves to operation 904 where a heater coupled to the air amplifier is activated. Once the heater is activated (eg, turned on), the air flow provided to the dielectric window on the plasma chamber will include heated air.

從操作904，該方法移動至操作906，其中於該窗中的溫度達到一第一預定溫度值後停止該空氣放大器及加熱器。從操作906，該方法移動至操作908，其中開啟該空氣放大器而沒有開啟該加熱器，以在該窗中的溫度達到一第二預定值後冷卻該窗。From operation 904, the method moves to operation 906 where the air amplifier and heater are stopped after the temperature in the window reaches a first predetermined temperature value. From operation 906, the method moves to operation 908 where the air amplifier is turned on without turning on the heater to cool the window after the temperature in the window reaches a second predetermined value.

從操作908，該方法移動至操作910，其中於該窗中的溫度低於一第三預定值後停止該空氣放大器。From operation 908, the method moves to operation 910 where the air amplifier is stopped after the temperature in the window is below a third predetermined value.

根據一實施例，圖10A為一曲線圖，顯示以空氣冷卻該窗的不同測試之結果。在沿著該窗半徑的不同點測量該窗上之溫度。然後，藉由以不同功率水平及不同的空氣放大器壓力操作該腔室而進行幾個實驗。在與圖1中所描述之腔室類似的一測試處理腔室中執行該等測試。In accordance with an embodiment, FIG. 10A is a graph showing the results of different tests for cooling the window with air. The temperature on the window is measured at different points along the radius of the window. Several experiments were then performed by operating the chamber at different power levels and different air amplifier pressures. These tests are performed in a test processing chamber similar to the chamber depicted in FIG.

線952顯示使用4.5kW的RF功率及以30cfm運作之空氣放大器時的資料，線954顯示使用4.5kW及120cfm的資料，而線956顯示使用2kW及30cfm的空氣放大器之資料。結果顯示該窗上的溫度在距離中央五英吋附近係最高的，即兩RF線圈之間的區域(充氣室所在的地方)。Line 952 shows information when using 4.5 kW of RF power and an air amplifier operating at 30 cfm, line 954 shows the use of 4.5 kW and 120 cfm data, and line 956 shows the use of 2 kW and 30 cfm air amplifiers. The result shows that the temperature on the window is highest in the vicinity of the center five miles, that is, the area between the two RF coils (where the plenum is located).

根據一實施例，該結果顯示當以較低功率(例如，2kW)運作時，30cfm足以冷卻該窗。然而，當以4.5kW運作時，30cfm無法將該窗上最熱的點之溫度降低至低於約200°C。120cfm的空氣放大器提供了足夠的冷卻以將該窗上的最大溫度降低至約180°C。According to an embodiment, the result shows that 30 cfm is sufficient to cool the window when operating at a lower power (eg, 2 kW). However, when operating at 4.5 kW, 30 cfm was unable to reduce the temperature at the hottest point on the window to below about 200 °C. The 120 cfm air amplifier provides sufficient cooling to reduce the maximum temperature on the window to approximately 180 °C.

吾人應注意，圖10A中所繪示之實施例為示例性的。該結果係在一測試腔室上以用以測試該窗溫度的特定參數而得到。其他實施例可產生不同的結果，且不應將該結果視為與本發明的任何性能主張有關。因此圖10A中所繪示之實施例不應被詮釋為排他性或限制性的，而是示例性或說明性的。It should be noted that the embodiment illustrated in Figure 10A is exemplary. The results were obtained on a test chamber to test specific parameters of the window temperature. Other embodiments may produce different results and should not be considered relevant to any performance claim of the present invention. The embodiment illustrated in Figure 10A is therefore not to be construed as limiting or limiting, but illustrative or illustrative.

圖10B繪示一實施例，用以隨著時間而控制介電窗之溫度。最初在t₀ ，開啟空氣放大器(AA)及加熱器(此時RF功率為關閉)以使介電窗的溫度達到一想要的溫度t_s 。在一實施例中，由於不需要以全功率的空氣流來加熱該窗，所以將空氣放大器調節為以50%的負載運作。當然，在另一實施例中該空氣放大器可以全負載(100%)運作。FIG. 10B illustrates an embodiment for controlling the temperature of the dielectric window over time. Initially at t ₀ , the air amplifier (AA) and heater (where the RF power is off) are turned on to bring the temperature of the dielectric window to a desired temperature t _s . In one embodiment, the air amplifier is adjusted to operate at 50% load since there is no need to heat the window with a full power air flow. Of course, in another embodiment the air amplifier can operate at full load (100%).

在t₁ ，該溫度達到t_s 且空氣放大器及加熱器被關閉，同時開啟RF功率以為電漿腔室中的處理做準備。隨著將RF功率提供至腔室，溫度逐漸地增加直到其達到t_h 。在t₂ ，以全負載(例如，100%)開啟空氣放大器以開始冷卻該窗。At t ₁ , the temperature reaches t _s and the air amplifier and heater are turned off while the RF power is turned on to prepare for processing in the plasma chamber. As the RF power to the chamber, the temperature is gradually increased until it reaches a t _h. At t ₂ , the air amplifier is turned on at full load (eg, 100%) to begin cooling the window.

由於空氣流的冷卻效果，該窗上的溫度冷卻下來。在t₃ ，溫度達到t_l ，其中t_l 為關閉該冷卻的低臨界值。因此，於t3關閉該空氣放大器。溫度開始再次上升。在一實施例中，該配方需要隨著不同程度的空氣放大器性能而調節該溫度。在t₄ ，以小於全負載(例如，60%)開啟該空氣放大器以在該窗達到最大溫度t_h 之前開始冷卻該窗。Due to the cooling effect of the air stream, the temperature on the window cools down. At t ₃ , the temperature reaches t _l , where t _l is the low critical value at which the cooling is turned off. Therefore, the air amplifier is turned off at t3. The temperature begins to rise again. In one embodiment, the recipe requires adjustment of the temperature with varying degrees of air amplifier performance. At t _4, at less than full load (e.g., 60%) of the air amplifier to open the window reaches the maximum cooling temperature before the start of the window _h t.

由於冷卻的結果，該窗上的溫度在一段時間內大致上保持常數，直到溫度開始再度上升(例如，對於給定的RF功率，在空氣放大器的此性能水平之冷卻不足以使該溫度維持在常數)。在t₅ ，將調節器改變為以80%運作以對該窗提供更多冷卻，導致該窗上的溫度逐漸地降低。在t₆ ，該溫度達到低溫t_l 且該空氣放大器被關閉。As a result of the cooling, the temperature on the window remains substantially constant over a period of time until the temperature begins to rise again (eg, for a given RF power, cooling at this level of performance of the air amplifier is insufficient to maintain the temperature at constant). At t _5, the regulator was changed to 80% in order to provide additional cooling of the operating window, causing the temperature on the window gradually decreases. At t ₆ , the temperature reaches a low temperature t _l and the air amplifier is turned off.

吾人應注意，圖10B中所繪示之實施例為示例性的。其他實施例可利用不同的功率水平，或於不同的溫度啟動該空氣放大器。因此圖10B中所繪示之實施例不應被詮釋為排他性或限制性的，而是示例性或說明性的。It should be noted that the embodiment illustrated in Figure 10B is exemplary. Other embodiments may utilize different power levels or activate the air amplifier at different temperatures. The embodiment illustrated in Figure 10B is therefore not to be construed as exclusive or limiting, but illustrative or illustrative.

圖11為用以實行本文中所描述實施例之電腦系統的簡化示意圖。吾人應了解本文中描述的方法可以數位處理系統加以執行，例如習知的、通用的電腦系統。可在替代方案中使用被設計或程式化以執行唯一功能之特別用途電腦。該電腦系統包括一中央處理單元(CPU) 844，該中央處理單元透過匯流排850連接至隨機存取記憶體(RAM) 828、唯讀記憶體(ROM) 852、及大量儲存裝置854。系統控制器程式 848駐存於隨機存取記憶體(RAM) 828中，但亦可駐存在大量儲存器854中。11 is a simplified schematic diagram of a computer system for practicing the embodiments described herein. It should be understood that the methods described herein can be performed by a digital processing system, such as a conventional, general purpose computer system. Special purpose computers designed or programmed to perform unique functions can be used in the alternative. The computer system includes a central processing unit (CPU) 844 coupled to a random access memory (RAM) 828, a read only memory (ROM) 852, and a plurality of storage devices 854 via a bus 850. The system controller program 848 resides in random access memory (RAM) 828, but may also reside in a large number of storage 854.

大量儲存裝置854代表一持續資料儲存裝置，例如可為本機或遠端的軟碟機或固定式磁碟機。網路介面830經由網路832提供連線，使其可與其他裝置溝通。吾人應了解CPU 844可被體現在通用處理器、特別用途處理器、或特別程式化之邏輯裝置中。輸出/輸入(I/O)介面提供與各樣的周邊裝置之溝通且透過匯流排850連接至CPU 844、RAM 828、ROM 852、及大量儲存裝置854。範例周邊裝置包括顯示器858、鍵盤862、游標控制器824、可移除式媒體裝置834、等。The mass storage device 854 represents a continuous data storage device, such as a floppy disk drive or a stationary disk drive that can be a local or remote device. Network interface 830 provides connectivity via network 832 to enable communication with other devices. It should be understood that the CPU 844 can be embodied in a general purpose processor, a special purpose processor, or a specially programmed logic device. The output/input (I/O) interface provides communication with various peripheral devices and is coupled to CPU 844, RAM 828, ROM 852, and mass storage device 854 via bus 850. Example peripheral devices include display 858, keyboard 862, cursor controller 824, removable media device 834, and the like.

顯示器858係用以顯示本文中描述的使用者介面。鍵盤862、游標控制器824、可移除式媒體裝置834、及其他周邊裝置被連接至I/O介面860以將在命令選擇中的資訊傳遞至CPU 844。吾人應了解，發送到外部裝置及從外部裝置發送的資料可透過I/O介面860而傳遞。本發明亦可在分散式計算環境中實施，其中任務透過有線或無線網路連接之遠端處理裝置加以執行。Display 858 is used to display the user interface described herein. Keyboard 862, cursor controller 824, removable media device 834, and other peripheral devices are coupled to I/O interface 860 to communicate information in command selection to CPU 844. It should be understood that the data transmitted to and from the external device can be transmitted through the I/O interface 860. The present invention can also be practiced in a distributed computing environment where tasks are performed by remote processing devices connected by wire or wireless network.

吾人應注意，雖然上述之實施例係參照電容耦合電漿(CCP)腔室而描述，但提出之原理亦可應用於其他類型之電漿腔室，例如一包括感應耦合電漿(ICP)反應器的電漿腔室、一包括電子迴旋共振(ECR)反應器的電漿腔室、等。It should be noted that although the above embodiments are described with reference to a capacitively coupled plasma (CCP) chamber, the proposed principles can also be applied to other types of plasma chambers, such as an inductively coupled plasma (ICP) reaction. a plasma chamber, a plasma chamber including an electron cyclotron resonance (ECR) reactor, and the like.

吾人應了解，可利用空氣放大器與各樣輸送空氣之充氣室設計來控制介電窗的溫度。此外，模型資料指出，即使遭受足以使風扇冷卻系統停轉的背壓，在充氣室的幫助下，空氣放大器仍有能力將相對較高速率之冷卻空氣提供至介電窗 。因此，可利用本文中描述之實施例以有效地冷卻遭受超過約3kW之電磁能量的介電窗，舉例而言，例如用於矽穿孔蝕刻處理。此外，可利用本文中描述之實施例以有效地冷卻遭受其他類型之電磁能量的介電窗，例如用於蝕刻處理、化學氣相沉積、氧化物蝕刻、金屬蝕刻、及類似處理。We should understand that the air chamber can be controlled by an air amplifier and various plenums that deliver air. In addition, the model data indicates that even with a back pressure sufficient to stall the fan cooling system, the air amplifier is still capable of providing a relatively high rate of cooling air to the dielectric window with the aid of the plenum. Thus, the embodiments described herein can be utilized to effectively cool a dielectric window that experiences electromagnetic energy in excess of about 3 kW, such as, for example, for a helium perforation etch process. Moreover, the embodiments described herein can be utilized to effectively cool dielectric windows that are subject to other types of electromagnetic energy, such as for etching processes, chemical vapor deposition, oxide etching, metal etching, and the like.

本發明之實施例可以各樣的電腦系統結構實行，包括手持裝置、微處理器系統、基於微處理器或可程式化之消費電子產品、微電腦、大型電腦、及類似物。本發明亦可在分散式計算環境中實施，其中任務透過網路連線之遠端處理裝置加以執行。Embodiments of the invention can be implemented in a variety of computer system architectures, including hand-held devices, microprocessor systems, microprocessor-based or programmable consumer electronics, microcomputers, large computers, and the like. The present invention can also be practiced in a distributed computing environment where tasks are performed by remote processing devices that are network connected.

本發明的一或更多實施例亦可被製作為電腦可讀媒體上的電腦可讀碼。該電腦可讀媒體係可儲存資料的任何資料儲存裝置，其中該資料儲存裝置之後可被電腦系統讀取。電腦可讀媒體的範例包括硬碟、網路附接儲存器(NAS)、唯讀記憶體、隨機存取記憶體、CD-ROMs、CD-Rs、CD-RWs、磁帶、及其他光學與非光學資料儲存裝置。電腦可讀媒體可包括電腦可讀的有形媒體，其中該電腦可讀的有形媒體係散佈於連接網路的電腦系統，俾使電腦可讀碼以散佈的方式被儲存及執行。One or more embodiments of the invention may also be fabricated as computer readable code on a computer readable medium. The computer readable medium is any data storage device that can store data, which can then be read by a computer system. Examples of computer readable media include hard disk, network attached storage (NAS), read only memory, random access memory, CD-ROMs, CD-Rs, CD-RWs, magnetic tape, and other optical and non- Optical data storage device. The computer readable medium can comprise a tangible medium readable by a computer, wherein the tangible medium readable by the computer is interspersed in a computer system connected to the network such that the computer readable code is stored and executed in a distributed manner.

雖然以特定順序描述方法操作，吾人應理解可在操作之間執行其他庶務操作，或可調整操作使得其在略為不同之時間發生，或可被分散在系統中，其中該系統只要重疊的操作之處理被以想要的方式執行則允許處理操作發生在與處理有關的不同區間。Although the method operations are described in a particular order, it should be understood that other operations may be performed between operations, or that the operations may be adjusted such that they occur at slightly different times, or may be dispersed in the system, where the system is only an overlapping operation Processing is performed in the desired manner, allowing processing operations to occur in different intervals related to processing.

雖然已對前述的發明進行詳細地描述以利於清楚理解的目的，顯而易見的，仍可在隨附申請專利範圍的範圍內實行某些改變及修改。因此，本實施例應被認為是說明性的而非限制性的，且本發明不受限於本文中所提供的細節，而係可在隨附申請專利範圍的範圍及同等物內修改。While the invention has been described in detail, it is apparent that the invention may be Therefore, the present embodiments are to be considered as illustrative and not restrictive, and the invention is not limited by the scope of the invention.

10‧‧‧介電窗
14‧‧‧空氣暴露表面
20‧‧‧真空腔室
22‧‧‧壓力控制腔室
24‧‧‧基板
26‧‧‧加熱器
30‧‧‧能量來源
32‧‧‧內線圈
34‧‧‧外線圈
40‧‧‧充氣室
42‧‧‧入口
44‧‧‧出口
46‧‧‧環節
48‧‧‧分隔牆
50‧‧‧導管
60‧‧‧空氣放大器
62‧‧‧入口
64‧‧‧排氣部
66‧‧‧控制輸入端
68‧‧‧加壓空氣
70‧‧‧空氣
72‧‧‧輸入空氣
74‧‧‧加熱器元件
80‧‧‧加壓空氣
82‧‧‧調節器
84‧‧‧溫度感測器
86‧‧‧外充氣室
100‧‧‧電漿處理裝置
104‧‧‧系統控制器
106‧‧‧電漿配方設定
108‧‧‧RF產生器
110‧‧‧匹配網路
120‧‧‧匹配網路
122‧‧‧第二RF產生器
140‧‧‧充氣室環節
144‧‧‧出口
702‧‧‧冷卻及加熱結構
802‧‧‧操作
804‧‧‧操作
806‧‧‧操作
808‧‧‧操作
810‧‧‧操作
812‧‧‧操作
814‧‧‧操作
816‧‧‧操作
818‧‧‧操作
820‧‧‧操作
822‧‧‧操作
824‧‧‧游標控制器
828‧‧‧RAM
830‧‧‧網路介面
832‧‧‧網路
834‧‧‧可移除式媒體裝置
844‧‧‧CPU
848‧‧‧系統控制器程式
850‧‧‧匯流排
852‧‧‧ROM
854‧‧‧大量儲存裝置
858‧‧‧顯示器
860‧‧‧I/O介面
862‧‧‧鍵盤
902‧‧‧操作
904‧‧‧操作
906‧‧‧操作
908‧‧‧操作
910‧‧‧操作
952‧‧‧線
954‧‧‧線
956‧‧‧線
t_n‧‧‧溫度
t_l‧‧‧溫度
t_s‧‧‧溫度
t₀‧‧‧時間點
t₁‧‧‧時間點
t₂‧‧‧時間點
t₃‧‧‧時間點
t₄‧‧‧時間點
t₅‧‧‧時間點
t₆‧‧‧時間點10‧‧‧ dielectric window
14‧‧‧ Air exposed surface
20‧‧‧vacuum chamber
22‧‧‧ Pressure Control Chamber
24‧‧‧Substrate
26‧‧‧heater
30‧‧‧Energy source
32‧‧‧ inner coil
34‧‧‧Outer coil
40‧‧‧Inflatable room
42‧‧‧ entrance
44‧‧‧Export
46‧‧‧ links
48‧‧‧ partition wall
50‧‧‧ catheter
60‧‧‧Air Amplifier
62‧‧‧ entrance
64‧‧‧Exhaust Department
66‧‧‧Control input
68‧‧‧ pressurized air
70‧‧‧ Air
72‧‧‧ Input air
74‧‧‧heater components
80‧‧‧ pressurized air
82‧‧‧Regulator
84‧‧‧temperature sensor
86‧‧‧External plenum
100‧‧‧ Plasma processing unit
104‧‧‧System Controller
106‧‧‧ Plasma formula setting
108‧‧‧RF generator
110‧‧‧matching network
120‧‧‧matching network
122‧‧‧Second RF Generator
140‧‧‧Inflatable room
144‧‧‧Export
702‧‧‧Cooling and heating structure
802‧‧‧ operation
804‧‧‧ operation
806‧‧‧ operation
808‧‧‧ operation
810‧‧‧ operation
812‧‧‧ operation
814‧‧‧ operation
816‧‧‧ operation
818‧‧‧ operation
820‧‧‧ operation
822‧‧‧ operation
824‧‧‧ cursor controller
828‧‧‧RAM
830‧‧‧Network interface
832‧‧‧Network
834‧‧‧Removable media device
844‧‧‧CPU
848‧‧‧System Controller Program
850‧‧ ‧ busbar
852‧‧‧ROM
854‧‧‧Many storage devices
858‧‧‧ display
860‧‧‧I/O interface
862‧‧‧ keyboard
902‧‧‧ operation
904‧‧‧ operation
906‧‧‧ operation
908‧‧‧ operation
910‧‧‧ operation
952‧‧‧ line
954‧‧‧ line
956‧‧‧ line
t _n ‧‧‧temperature
t _l ‧‧‧temperature
t _s ‧‧‧temperature
t ₀ ‧‧‧ time point
t ₁ ‧‧‧ time
t ₂ ‧‧‧ time point
t ₃ ‧‧‧ time
t ₄ ‧‧‧ time
t ₅ ‧‧‧ time
t ₆ ‧‧‧ time

參考以下配合隨附圖式所做的詳細描述可以最好地理解本發明。The invention may be best understood by reference to the following detailed description of the accompanying drawings.

根據本文中顯示及描述的一或更多實施例，圖1示意性地描繪一電漿處理裝置。In accordance with one or more embodiments shown and described herein, FIG. 1 schematically depicts a plasma processing apparatus.

根據本文中顯示及描述的一或更多實施例，圖2示意性地描繪一充氣室。In accordance with one or more embodiments shown and described herein, FIG. 2 schematically depicts an plenum.

根據本文中顯示及描述的一或更多實施例，圖3示意性地描繪一充氣室環節。In accordance with one or more embodiments shown and described herein, FIG. 3 schematically depicts a plenum session.

根據一實施例，圖4A繪示一加熱器元件，該加熱器元件連接至空氣放大器以將空氣流加熱。According to an embodiment, FIG. 4A illustrates a heater element coupled to an air amplifier to heat a stream of air.

根據一實施例，圖4B繪示一加熱器元件，該加熱器元件係串接於空氣放大器與貼附至該充氣室的導管之間。According to an embodiment, FIG. 4B illustrates a heater element that is coupled in series between an air amplifier and a conduit attached to the plenum.

根據一實施例，圖5繪示在介電窗上的直接空氣流供應而無須充氣室。According to an embodiment, Figure 5 illustrates the supply of direct air flow over the dielectric window without the need for a plenum.

根據一實施例，圖6繪示一具有複數充氣室之腔室。According to an embodiment, FIG. 6 illustrates a chamber having a plurality of plenums.

圖7A-7D繪示幾個利用壓縮空氣來冷卻該腔室窗之不同配置實施例。Figures 7A-7D illustrate several different configurations of embodiments for utilizing compressed air to cool the chamber window.

根據一實施例，圖8為一方法的流程圖，該方法係用以在處理期間內管理該窗的溫度。In accordance with an embodiment, FIG. 8 is a flow diagram of a method for managing the temperature of a window during processing.

根據一實施例，圖9為一方法之流程圖，該方法係用以管理該腔室窗之溫度。In accordance with an embodiment, FIG. 9 is a flow diagram of a method for managing the temperature of the chamber window.

根據一實施例，圖10A為一曲線圖，顯示以空氣冷卻該窗之不同測試的結果。In accordance with an embodiment, FIG. 10A is a graph showing the results of different tests for cooling the window with air.

圖10B繪示一實施例，用以隨著時間而控制介電窗之溫度。FIG. 10B illustrates an embodiment for controlling the temperature of the dielectric window over time.

圖11為用以實行本文中所描述之實施例的電腦系統之簡化示意圖。11 is a simplified schematic diagram of a computer system for practicing the embodiments described herein.

104‧‧‧系統控制器 104‧‧‧System Controller

702‧‧‧冷卻及加熱結構 702‧‧‧Cooling and heating structure

Claims (20)

一種製造半導體的設備，包含： 一連接至加壓氣體的空氣放大器，當啟動時該空氣放大器產生一空氣流； 一連接至該空氣放大器的充氣室，其中該充氣室接收該空氣流並將該空氣流分佈在一電漿腔室的一窗上面； 一連接至該空氣放大器的加熱器，其中當該加熱器於該電漿腔室中的處理期間啟動時該空氣流被加熱。 一溫度感測器，位於該電漿腔室的該窗附近；及 一控制器，用以基於該溫度感測器所測量到的一溫度而啟動該空氣放大器及啟動該加熱器。An apparatus for manufacturing a semiconductor, comprising: an air amplifier connected to a pressurized gas, the air amplifier generating an air flow when activated; a plenum connected to the air amplifier, wherein the plenum receives the air flow and The air stream is distributed over a window of a plasma chamber; a heater coupled to the air amplifier, wherein the air stream is heated when the heater is activated during processing in the plasma chamber. a temperature sensor located adjacent the window of the plasma chamber; and a controller for activating the air amplifier and activating the heater based on a temperature measured by the temperature sensor. 如申請專利範圍第1項之製造半導體的設備，其中該充氣室包括複數區段，其中一第一區段連接至該空氣放大器且其他區段連接至各別的空氣放大器及加熱器。The apparatus for fabricating a semiconductor of claim 1, wherein the plenum comprises a plurality of sections, wherein a first section is coupled to the air amplifier and the other sections are coupled to respective air amplifiers and heaters. 如申請專利範圍第1項之製造半導體的設備，其中該控制器係用以讀取一電腦可讀媒體中的一配方之複數指令，該等指令界定了用以啟動該空氣放大器及該加熱器的參數。An apparatus for manufacturing a semiconductor according to claim 1, wherein the controller is for reading a plurality of instructions in a computer readable medium, the instructions defining the air amplifier and the heater Parameters. 如申請專利範圍第1項之製造半導體的設備，更包括： 一調節器，連接至該空氣放大器及該控制器，其中該控制器係用以將該調節器設定至一性能值以調節該空氣流的強度，其中該性能值係從複數的值中選出。The device for manufacturing a semiconductor according to claim 1, further comprising: a regulator connected to the air amplifier and the controller, wherein the controller is configured to set the regulator to a performance value to adjust the air The intensity of the stream, where the performance value is selected from a plurality of values. 如申請專利範圍第1項之製造半導體的設備，更包括： 一內線圈，位於該電漿腔室的該窗上方；及 一外線圈，位於該電漿腔室的該窗上方。The apparatus for manufacturing a semiconductor of claim 1, further comprising: an inner coil located above the window of the plasma chamber; and an outer coil positioned above the window of the plasma chamber. 如申請專利範圍第5項之製造半導體的設備，其中該充氣室為環形的且配置於該內線圈與該外線圈之間。The apparatus for manufacturing a semiconductor according to claim 5, wherein the plenum is annular and disposed between the inner coil and the outer coil. 如申請專利範圍第1項之製造半導體的設備，更包括： 一第一線圈； 一第二線圈； 一第三線圈；其中該第一線圈、該第二線圈、及該第三線圈係同心的，其中該充氣室係環形的且配置於該第一線圈與該第二線圈之間；及 一外充氣室，配置於該二線圈與該第三線圈之間。The device for manufacturing a semiconductor according to claim 1, further comprising: a first coil; a second coil; a third coil; wherein the first coil, the second coil, and the third coil are concentric The plenum is annular and disposed between the first coil and the second coil; and an outer plenum is disposed between the second coil and the third coil. 如申請專利範圍第1項之製造半導體的設備，更包括： 一導管管道，位於該空氣放大器與該充氣室之間。The apparatus for manufacturing a semiconductor of claim 1, further comprising: a conduit conduit between the air amplifier and the plenum. 如申請專利範圍第1項之製造半導體的設備，更包括： 一加熱器調節器，連接至該加熱器及該控制器。The apparatus for manufacturing a semiconductor according to claim 1, further comprising: a heater regulator connected to the heater and the controller. 一種處理半導體配備的方法，該方法包含： 首次啟動一空氣放大器，該空氣放大器係用以產生一空氣流； 首次啟動一加熱器，該加熱器連接至該空氣放大器以加熱該空氣流，其中該空氣流分佈於一電漿腔室的一窗上面。 當該窗的一溫度達到一第一預定值時停止該空氣放大器及該加熱器； 當該溫度達到一第二預定值時第二次啟動該空氣放大器而不啟動該加熱器以冷卻該窗；及 當該溫度低於一第三預定值時停止該空氣放大器，其中藉由處理器而執行該方法之操作。A method of processing a semiconductor device, the method comprising: first starting an air amplifier for generating an air flow; first starting a heater, the heater being coupled to the air amplifier to heat the air stream, wherein The air flow is distributed over a window of a plasma chamber. Stopping the air amplifier and the heater when a temperature of the window reaches a first predetermined value; activating the air amplifier a second time when the temperature reaches a second predetermined value without starting the heater to cool the window; And stopping the air amplifier when the temperature is below a third predetermined value, wherein the operation of the method is performed by a processor. 如申請專利範圍第10項之處理半導體配備的方法，更包括： 接收一配方，該配方具有用以處理基板之複數指令，其中該配方包括該第一、第二、及第三預定值。The method of processing semiconductors of claim 10, further comprising: receiving a recipe having a plurality of instructions for processing the substrate, wherein the recipe includes the first, second, and third predetermined values. 如申請專利範圍第10項之處理半導體配備的方法，其中首次啟動該空氣放大器更包含： 開動一調節器，該調節器使加壓空氣可以通過該空氣放大器，其中當該調節器停止時該空氣放大器停止。A method of processing a semiconductor device according to claim 10, wherein the first starting of the air amplifier further comprises: actuating a regulator that allows pressurized air to pass through the air amplifier, wherein the air is stopped when the regulator is stopped The amplifier stops. 如申請專利範圍第12項之處理半導體配備的方法，其中開動該調節器更包含： 為該調節器設定一性能值，其中該性能值決定了該空氣流的強度。A method of processing a semiconductor device according to claim 12, wherein the actuating the regulator further comprises: setting a performance value for the regulator, wherein the performance value determines the intensity of the air flow. 如申請專利範圍第10項之處理半導體配備的方法，其中該方法之操作係藉由一或更多處理器所執行的電腦程式加以實施，該電腦程式被嵌入在一非暫態的電腦可讀儲存媒體中。A method of processing a semiconductor device according to claim 10, wherein the operation of the method is performed by a computer program executed by one or more processors, the computer program being embedded in a non-transitory computer readable In the storage medium. 一種製造半導體的設備，包含： 複數空氣放大器，連接至加壓氣體，當啟動時每一空氣放大器產生一空氣流； 一充氣室，包括複數區段，每一區段連接至一各別的空氣放大器，其中每一區段從各別的空氣放大器接收該空氣流且每一區段將該空氣流分佈於一電漿腔室的一窗上面； 複數加熱器，每一加熱器連接至各別的空氣放大器，其中當每一加熱器於該電漿腔室中的處理期間啟動時該空氣流被加熱； 一或更多溫度感測器，位於該電漿腔室的該窗附近；及 一控制器，用以基於該一或更多溫度感測器所測量到的一或更多溫度而啟動每一空氣放大器及啟動每一加熱器。A semiconductor manufacturing apparatus comprising: a plurality of air amplifiers connected to a pressurized gas, each air amplifier generating an air flow when activated; a plenum comprising a plurality of sections, each section being connected to a respective air An amplifier, wherein each section receives the air stream from a respective air amplifier and each section distributes the air stream over a window of a plasma chamber; a plurality of heaters, each heater being connected to a respective one An air amplifier wherein the air stream is heated as each heater is activated during processing in the plasma chamber; one or more temperature sensors are located adjacent the window of the plasma chamber; and And a controller for activating each of the air amplifiers and activating each of the heaters based on one or more temperatures measured by the one or more temperature sensors. 如申請專利範圍第15項之製造半導體的設備，更包括： 一內線圈，位於該電漿腔室的該窗上方；及 一外線圈，位於該電漿腔室的該窗上方，其中該充氣室係環形的且配置於該內線圈與該外線圈之間。The apparatus for manufacturing a semiconductor according to claim 15 further comprising: an inner coil located above the window of the plasma chamber; and an outer coil located above the window of the plasma chamber, wherein the inflating The chamber is annular and disposed between the inner coil and the outer coil. 如申請專利範圍第15項之製造半導體的設備，更包括： 一第一線圈； 一第二線圈；及 一第三線圈，其中該第一線圈、該第二線圈、及該第三線圈係同心的，其中該充氣室係環形的且配置於該第一線圈與該第二線圈之間。The device for manufacturing a semiconductor according to claim 15 , further comprising: a first coil; a second coil; and a third coil, wherein the first coil, the second coil, and the third coil are concentric The plenum is annular and disposed between the first coil and the second coil. 如申請專利範圍第17項之製造半導體的設備，更包括： 一外充氣室，包括配置在該第二線圈與該第三線圈之間的複數外區段。The apparatus for manufacturing a semiconductor of claim 17, further comprising: an outer plenum comprising a plurality of outer sections disposed between the second coil and the third coil. 如申請專利範圍第18項之製造半導體的設備，更包括： 一外部充氣室，配置在該第三線圈外面。The device for manufacturing a semiconductor according to claim 18, further comprising: an external plenum disposed outside the third coil. 如申請專利範圍第15項之製造半導體的設備，更包括： 複數導管通道，每一導管通道連接至一空氣放大器，每一空氣放大器具有一各別的充氣室區段。The apparatus for manufacturing a semiconductor of claim 15 further comprising: a plurality of conduit channels each connected to an air amplifier, each air amplifier having a respective plenum section.