TW201505147A - Coated copper wire for bonding applications - Google Patents

Coated copper wire for bonding applications Download PDF

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Publication number
TW201505147A
TW201505147A TW103106538A TW103106538A TW201505147A TW 201505147 A TW201505147 A TW 201505147A TW 103106538 A TW103106538 A TW 103106538A TW 103106538 A TW103106538 A TW 103106538A TW 201505147 A TW201505147 A TW 201505147A
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TW
Taiwan
Prior art keywords
wire
line
core
ppm
bonding
Prior art date
Application number
TW103106538A
Other languages
Chinese (zh)
Inventor
Yeong Huey Chew
Murali Sarangapani
Eugen Milke
Original Assignee
Heraeus Materials Singapore Pte Ltd
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Publication date
Application filed by Heraeus Materials Singapore Pte Ltd filed Critical Heraeus Materials Singapore Pte Ltd
Publication of TW201505147A publication Critical patent/TW201505147A/en

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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  • Wire Bonding (AREA)

Abstract

The invention is related to a bonding wire, comprising a core with a surface, wherein the core comprises copper as a main component, and a coating layer superimposed over the surface of the core, wherein the core comprises copper as a main component, and a coating layer superimposed over the surface of the core, wherein the coating layer comprises palladium as a main component, wherein the core comprises at least 5 ppm silver and at least 20 ppm phosphorus as further components, wherein the wire meets the relation 0.000025 < E/(d*Cag) < 0.15, wherein E is an elongation of the wire measured in %, d is a diameter of the wire measured in [mu]m and Cag is the silver content of the wire core measured in ppm.

Description

用於接合應用之經塗覆銅線 Coated copper wire for bonding applications

本發明係關於接合線，其包含具有表面之核心及疊加於核心表面上之塗覆層，其中核心包含銅作為主要組份，其中塗覆層包含鈀作為主要組份，其中核心包含至少5ppm銀及至少20ppm磷作為其他組份，其中線滿足關係0.000025<E/(d*CAg)<0.15，其中E係以%量測之線之伸長率，d係以μm量測之線之直徑，且CAg係以ppm量測之線核心之銀含量。 The present invention relates to a bonding wire comprising a core having a surface and a coating layer superposed on a core surface, wherein the core comprises copper as a main component, wherein the coating layer comprises palladium as a main component, wherein the core comprises at least 5 ppm of silver And at least 20 ppm of phosphorus as the other component, wherein the line satisfies the relationship 0.000025 < E / (d * CAg) < 0.15, wherein E is the elongation of the line measured in %, and d is the diameter of the line measured in μm, and CAg is the silver content of the core of the wire measured in ppm.

本發明進一步係關於用於接合電子器件之系統，其包含第一接合墊、第二接合墊及本發明線，其中藉助楔接合將本發明線與至少一個接合墊連接。 The invention further relates to a system for joining electronic devices comprising a first bond pad, a second bond pad and a wire of the invention, wherein the wire of the invention is joined to at least one bond pad by means of a wedge bond.

本發明進一步係關於製造本發明線之方法。 The invention further relates to a method of making the wire of the invention.

接合線係用於製造半導體器件，其在半導體器件構造期間用於電互連積體電路與印刷電路板。此外，接合線係用於電力電子應用中以將電晶體、二極體及諸如此類與殼體之墊或銷電連接。雖然起初接合線係由金製成，但現今使用較便宜材料，例如銅。雖然銅線提供極好導電性及導熱性，但銅線之楔接合存在其挑戰。此外，銅線易受線氧化之影響。 Bonding wires are used to fabricate semiconductor devices for electrically interconnecting integrated circuits and printed circuit boards during semiconductor device construction. In addition, bond wires are used in power electronics applications to electrically connect transistors, diodes, and the like to pads or pins of the housing. Although the bond wires were originally made of gold, less expensive materials such as copper are used today. Although copper wire provides excellent electrical and thermal conductivity, the wedge bonding of copper wire presents its challenges. In addition, copper wires are susceptible to wire oxidation.

關於線幾何形狀，最常見者為圓形截面之接合線及具有近乎矩形之截面之接合條帶。兩種類型之線幾何形狀具有使得其可用於具體應用之優勢。因此，兩種類型之幾何形狀在市場上均佔有其份額。例如，對於給定截面積接合條帶具有較大接觸面積。然而，條帶之彎曲 受限且在接合時必須觀察條帶之定向以在條帶與其所接合之元件之間達成可接受之電接觸。而接合線對彎曲撓性更強。然而，在接合製程中接合涉及線之焊接或較大變形，此可造成損壞或甚至破壞接合墊及與其接合之元件之基礎電結構。 With regard to line geometry, the most common are the bond wires of a circular cross section and the bond strips having a nearly rectangular cross section. Both types of line geometries have the advantage of making them useful for specific applications. Therefore, both types of geometries have a share in the market. For example, a given contact area has a larger contact area for a given cross-sectional area. However, the bending of the strip It is limited and the orientation of the strip must be observed during bonding to achieve acceptable electrical contact between the strip and the component to which it is bonded. The bonding wire is more flexible for bending. However, bonding involves wire bonding or larger deformations in the bonding process, which can cause damage or even damage to the bond pads and the underlying electrical structures of the components that are bonded thereto.

對於本發明，術語接合線包含所有截面形狀及所有常見線直徑，但具有圓形截面及細直徑之接合線較佳。 For the purposes of the present invention, the term bonding wire encompasses all cross-sectional shapes and all common wire diameters, but bonding wires having a circular cross-section and a fine diameter are preferred.

一些最新研發係關於具有銅核心及保護塗覆層之接合線。由於高導電性而選擇銅作為核心材料。關於塗覆層，鈀係一種可能選擇。該等經塗覆接合線組合銅線之優勢與對氧化之較低敏感性。然而，關於接合線自身及接合製程，業內仍需要進一步改良接合線技術。 Some of the latest developments are related to bonding wires with a copper core and a protective coating. Copper is selected as the core material due to high conductivity. Regarding the coating layer, palladium is a possible choice. The coated bond wire combines the advantages of copper wire with a lower sensitivity to oxidation. However, with regard to the bonding wires themselves and the bonding process, there is still a need in the industry for further improvements in bonding wire technology.

因此，本發明之目的係提供經改良接合線。 Accordingly, it is an object of the present invention to provide improved bond wires.

因此，本發明之另一目的係提供如下接合線：其具有良好處理性質且其在互連時無特殊需要，從而節約了成本。 Therefore, another object of the present invention is to provide a bonding wire which has good handling properties and which has no special need at the time of interconnection, thereby saving cost.

本發明之目的亦為提供具有優良導電性及導熱性之接合線。 It is also an object of the present invention to provide a bonding wire having excellent electrical conductivity and thermal conductivity.

本發明之再一目的係提供呈現經改良可靠性之接合線。 A further object of the present invention is to provide a bond wire that exhibits improved reliability.

本發明之再一目的係提供呈現經優良接合性之接合線。 Still another object of the present invention is to provide a bonding wire that exhibits excellent bondability.

本發明之另一目的係提供對於楔接合及/或第二接合顯示經改良接合性之接合線。 Another object of the present invention is to provide a bond wire that exhibits improved bondability for wedge bonding and/or second bonding.

本發明之另一目的係提供如下接合線：其對於係楔接合之第二接合顯示經改良接合性，同時對於係球接合之第一接合之接合性能至少係足夠的。 Another object of the present invention is to provide a bond wire that exhibits improved bondability for the second bond of the wedge bond, while at least sufficient bonding performance for the first bond of the ball bond.

本發明之另一目的係提供具有改良腐蝕抗性及/或氧化抗性之接合線。 Another object of the present invention is to provide a bond wire having improved corrosion resistance and/or oxidation resistance.

另一目的係提供欲與標準晶片及接合技術一起使用之用於接合電子器件之系統，該系統顯示至少對於第二接合之降低之失效率。 Another object is to provide a system for bonding electronic devices to be used with standard wafer and bonding techniques that exhibits a reduced failure rate for at least the second bond.

另一目的係提供用於製造本發明接合線之方法，該方法顯示與 已知方法相比基本上不增加製造成本。 Another object is to provide a method for making the bonding wire of the present invention, which method is shown The known method does not substantially increase the manufacturing cost.

令人驚奇地，已發現本發明線可解決至少一個上文所提及目的。此外，已發現用於製造該等線之製程克服至少一個製造線之挑戰。此外，發現包含本發明線之系統在本發明線與其他電元件(例如印刷電路板、墊/銷等)之間之介面處更可靠。 Surprisingly, it has been found that the present invention solves at least one of the above mentioned objects. In addition, processes for making such lines have been found to overcome the challenges of at least one manufacturing line. Furthermore, it has been found that systems incorporating the present invention are more reliable at the interface between the present invention and other electrical components (e.g., printed circuit boards, pads/pins, etc.).

獨立請求項之標的物對解決至少一個以上目的有貢獻，其中獨立請求項之從屬請求項代表本發明之較佳態樣，其標的物對解決至少一個上文所提及目的同樣有貢獻。 The subject matter of the independent claim item contributes to solving at least one of the above objects, wherein the dependent claim item of the independent claim item represents a preferred aspect of the present invention, the subject matter of which also contributes to solving at least one of the above mentioned objects.

本發明之第一態樣係接合線，其包含：具有表面之核心，其中核心包含銅作為主要組份，及疊加於核心表面上之塗覆層，其中塗覆層包含鈀作為主要組份，其中核心包含至少5ppm銀及至少20ppm磷作為其他組份，其中線滿足關係 A first aspect of the present invention is a bonding wire comprising: a core having a surface, wherein the core comprises copper as a main component, and a coating layer superposed on the core surface, wherein the coating layer comprises palladium as a main component, The core contains at least 5 ppm of silver and at least 20 ppm of phosphorus as other components, wherein the line satisfies the relationship

0.000025<E/(d*CAg)<0.15，其中E係以%量測之線之伸長率，d係以μm量測之線之直徑，且CAg係以ppm量測之線核心之銀含量。 0.000025 < E / (d * CAg) < 0.15, where E is the elongation of the wire measured in %, d is the diameter of the wire measured in μm, and CAg is the silver content of the wire core measured in ppm.

本發明之該線具有端視對其伸長率及直徑之各別要求最佳化之銀含量。更佳地，線滿足關係0.00025<E/(d*Ag)<0.15，且最佳地，線滿足關係0.005<E/(d*Ag)<0.12。 The wire of the present invention has a silver content that is optimized for its individual requirements for elongation and diameter. More preferably, the line satisfies the relationship 0.00025 < E / (d * Ag) < 0.15, and optimally, the line satisfies the relationship 0.005 < E / (d * Ag) < 0.12.

若不提供其他具體定義，則組份之所有含量或份數目前係以重量份數給出。特定而言，以百分比給出之份數應理解為重量%，且以ppm(百萬份數)給出之份數應理解為重量ppm。 If no other specific definition is provided, all amounts or parts of the components are given in parts by weight. In particular, parts given as a percentage are to be understood as % by weight, and parts given in ppm (parts per million) are to be understood as ppm by weight.

術語「疊加」在本發明上下文中係用於描述第一項(例如銅核心)相對於第二項(例如塗覆層)之相對位置。可能地，其他項(例如中間層)可佈置於第一與第二項之間。較佳地，第二項係至少部分疊加於 第一項上，例如佔第一項之總表面之至少30%、50%、70%或至少90%。最佳地，第二項係完全疊加於第一項上。術語「中間層」在本發明上下文中係介於銅核心與塗覆層間之線區域。在此區域中，如核心中之材料以及如塗覆層中之材料係組合存在。 The term "superposition" is used in the context of the present invention to describe the relative position of a first item (e.g., a copper core) relative to a second item (e.g., a coating layer). Possibly, other items (eg, an intermediate layer) may be disposed between the first and second items. Preferably, the second term is at least partially superimposed on In the first term, for example, at least 30%, 50%, 70% or at least 90% of the total surface of the first item. Optimally, the second item is completely superimposed on the first item. The term "intermediate layer" is in the context of the invention a line region between the copper core and the coating layer. In this region, materials such as those in the core and combinations of materials such as in the coating layer are present.

線為尤其用於在微電子中接合之接合線。線較佳為一件式物體。 Wires are bonding wires that are especially used for bonding in microelectronics. The line is preferably a one-piece object.

若組份之份數超過所提及材料之所有其他組份，則此組份為「主要組份」。較佳地，主要組份佔材料總重量之至少50%。 If the number of copies of the component exceeds all other components of the mentioned material, the component is the "main component". Preferably, the primary component comprises at least 50% of the total weight of the material.

在本發明線之較佳實施例中，核心之銀含量與磷含量之間之比係在0.03至2之範圍內。在更佳實施例中，銀含量對磷含量之比係在0.05至2之範圍內，最佳在0.05至0.5之範圍內。 In a preferred embodiment of the invention, the ratio of the silver content to the phosphorus content of the core is in the range of 0.03 to 2. In a more preferred embodiment, the ratio of silver content to phosphorus content is in the range of from 0.05 to 2, most preferably in the range of from 0.05 to 0.5.

結果驚奇地發現，控制銀含量與銅含量之比產生具有經改良之接合製程性質之線。特定而言，已發現楔接合性能之有利改良。 As a result, it has been surprisingly found that controlling the ratio of silver content to copper content produces a line with improved bonding process properties. In particular, advantageous improvements in wedge bonding properties have been found.

若核心之磷含量係在20ppm至300ppm範圍內，則該等改良尤其顯著。在更佳實施例中，磷含量係在30ppm至200ppm範圍內。結果已發現，該磷量對於核心之維氏硬度(Vickers hardness)似乎係可容許的，同時保持磷含量在氧化等方面之益處。 These improvements are particularly significant if the core phosphorus content is in the range of 20 ppm to 300 ppm. In a more preferred embodiment, the phosphorus content is in the range of from 30 ppm to 200 ppm. As a result, it has been found that the amount of phosphorus seems to be tolerable for the Vickers hardness of the core while maintaining the benefit of the phosphorus content in terms of oxidation and the like.

另外或另一選擇為，核心之銀含量為至少5ppm。在較佳實施例中，銀含量係在5ppm至1000ppm範圍內。在最佳實施例中，銀含量係在5ppm至100ppm範圍內。本發明之結果顯示，至少少量銀之存在增加線之有益機械性質(如柔軟度)。若在線核心中保持一定比率之銀及磷，則此增加尤其明顯。 Additionally or alternatively, the core has a silver content of at least 5 ppm. In a preferred embodiment, the silver content is in the range of 5 ppm to 1000 ppm. In a preferred embodiment, the silver content is in the range of 5 ppm to 100 ppm. The results of the present invention show that the presence of at least a small amount of silver increases the beneficial mechanical properties (e.g., softness) of the wire. This increase is especially noticeable if a certain ratio of silver and phosphorus is maintained in the online core.

較佳地，核心之銅含量為至少99.98%。此允許使用一般供應之用於線接合之銅材料，而不會因高純度規格而成本極高。進一步較佳地，核心之除銀以外之所有金屬雜質之總量合計小於30ppm。 Preferably, the core has a copper content of at least 99.98%. This allows the use of copper materials for wire bonding that are generally supplied without being costly due to high purity specifications. Further preferably, the total amount of all metal impurities other than silver in the core is less than 30 ppm.

一般而言，較佳者為其中塗覆層具有小於0.5μm之厚度之實施 例。若塗覆層足夠薄，則此在接合製程中提供之塗覆層之效應可忽略。術語「厚度」在本發明上下文中係用於界定層在垂直於銅核心之縱向軸方向上之大小，該層係至少部分疊加於銅核心表面上。 In general, it is preferred that the coating layer has a thickness of less than 0.5 μm. example. If the coating is sufficiently thin, the effect of the coating provided during the bonding process is negligible. The term "thickness" is used in the context of the present invention to define the size of a layer in a direction perpendicular to the longitudinal axis of the copper core, the layer being at least partially superimposed on the surface of the copper core.

關於塗覆層之組成，該層之鈀含量為至少50%，更佳至少95%。尤佳地，塗覆層係由純鈀與小於1%之其他組份組成。若塗覆層具有大量其他組份，則彼等組份較佳為貴金屬。 With respect to the composition of the coating layer, the layer has a palladium content of at least 50%, more preferably at least 95%. More preferably, the coating consists of pure palladium with less than 1% of other components. If the coating layer has a large number of other components, then the components are preferably noble metals.

特定而言，本發明係關於細接合線。由於(例如)細線對氧化之敏感性，故所觀測到之效應對於該等細線特別有益。在本發明情形下，術語「細線」係定義為直徑在8μm至80μm範圍內之線。 In particular, the present invention relates to a thin bond wire. The observed effects are particularly beneficial for such fine lines due to, for example, the sensitivity of the fine lines to oxidation. In the context of the present invention, the term "thin line" is defined as a line having a diameter in the range of 8 μm to 80 μm.

該等細線多半(但並非必須)具有基本上呈圓形之截面視圖。術語「截面視圖」在本發明上下文中係指切斷線之切口之視圖，其中切口平面垂直於線之縱向延伸。截面視圖可見於線之縱向延伸上之任何位置。截面中穿過線之「最長路徑」為可在截面視圖平面內穿過線之截面存在之最長弦。截面中穿過線之「最短路徑」為垂直於上文所定義之截面視圖平面內之最長路徑的最長弦。若線具有完美圓形截面，則最長路徑及最路徑變得無法區分並共享同一值。術語「直徑」係任何平面及在任何方向上之所有幾何直徑之算數平均值，其中所有平面垂直於線之縱向延伸。 Most of these thin lines, but not necessarily, have a substantially circular cross-sectional view. The term "sectional view" in the context of the present invention refers to a view of the slit of the cut line, wherein the cut plane extends perpendicular to the longitudinal direction of the line. The cross-sectional view can be seen anywhere on the longitudinal extension of the line. The "longest path" through the line in the section is the longest string that can exist through the section of the line in the plane of the section view. The "shortest path" through the line in the section is the longest string perpendicular to the longest path in the plane of the section view defined above. If the line has a perfectly circular cross section, the longest path and the most path become indistinguishable and share the same value. The term "diameter" is the arithmetic mean of any geometric plane of any plane and in any direction, wherein all planes extend perpendicular to the longitudinal direction of the line.

一般較佳地，線之伸長率與線之直徑之比在0.25%/μm至0.75%/μm範圍內。線之伸長率E係以百分比數值給出。若給出線之初長度L並將線在其斷裂前拉伸至長度L’，則伸長率定義為E=(L’-L)/L。 Generally, the ratio of the elongation of the wire to the diameter of the wire is in the range of 0.25%/μm to 0.75%/μm. The elongation E of the wire is given as a percentage value. If the initial length L of the line is given and the line is stretched to the length L' before it breaks, the elongation is defined as E = (L' - L) / L.

在本發明之較佳實施例中，線滿足關係0.0008<E/(d*CP)<0.0375，其中E係以%量測之線之伸長率，d係以μm量測之線之直徑，且CP係以ppm量測之線核心之磷含量。該線具有端視對其伸長率及直徑之各別要求最佳化之磷含量。更佳地，線滿足關係0.002<E/(d*CP)<0.02，且最佳地，線滿足關係0.003<E/(d*CP)<0.015。 In a preferred embodiment of the invention, the line satisfies the relationship 0.0008 < E / (d * CP) < 0.0375, where E is the elongation of the line measured in %, and d is the diameter of the line measured in μm, and The CP is the phosphorus content of the core of the wire measured in ppm. The wire has a phosphorus content that is optimized for its individual elongation and diameter requirements. More preferably, the line satisfies the relationship 0.002 < E / (d * CP) < 0.02, and optimally, the line satisfies the relationship 0.003 < E / (d * CP) < 0.015.

較佳在具有至少370℃溫度之退火步驟中處理本發明線。甚至更佳地，退火步驟之溫度為至少430℃，其中較高退火溫度可提供線之較高伸長率值。 The wire of the invention is preferably treated in an annealing step having a temperature of at least 370 °C. Even more preferably, the temperature of the annealing step is at least 430 ° C, wherein a higher annealing temperature provides a higher elongation value for the wire.

關於退火之其他參數，特定而言細線不需長時間暴露於退火溫度。在大多數情形下，藉由以給定速度用一定溫度輪廓牽拉線穿過給定長度之退火爐來進行退火。細線於退火溫度下之暴露時間通常在0.1秒至10秒範圍內。 Regarding other parameters of the annealing, in particular, the thin wires do not need to be exposed to the annealing temperature for a long time. In most cases, annealing is performed by drawing a wire through a given length of annealing furnace at a given speed with a certain temperature profile. The exposure time of the fine line at the annealing temperature is usually in the range of 0.1 second to 10 seconds.

對於較佳實施例之線，線核心之硬度不高於120.00 Hv0.5。此限制在自動化接合程序期間可發生之施加於接合墊上之最大力。若將機械敏感結構在接合墊下方對準，則該限制尤其有用。若接合墊係由軟材料(如鋁或金)組成，則尤其如此。敏感結構可包含(例如)一個或若干個多孔二氧化矽層，特定而言其介電常數小於2.5。該多孔且因此弱性之材料正變得愈來愈常用，此乃因其可有助於提高器件性能。因此，本發明接合線之機械性質係經最佳化以避免弱性層之破裂或其他損害。 For the wire of the preferred embodiment, the hardness of the wire core is not higher than 120.00 Hv 0.5. This limit is the maximum force that can be applied to the bond pads that can occur during the automated bonding process. This limitation is especially useful if the mechanically sensitive structure is aligned under the bond pads. This is especially true if the bond pads are composed of a soft material such as aluminum or gold. The sensitive structure may comprise, for example, one or several porous ceria layers, in particular having a dielectric constant of less than 2.5. This porous and therefore weak material is becoming more and more popular as it can help improve device performance. Thus, the mechanical properties of the bond wires of the present invention are optimized to avoid cracking or other damage to the weakened layers.

理想地量測作為最終產品之線之線核心硬度，此意味著在已完成所有製造步驟(如塗覆及退火)後進行量測。為實施硬度量測，可製備線之金相學截面以產生平坦表面。此可在縱向方向上(更常見)或在橫向方向上進行。 The core hardness of the line as the final product is ideally measured, which means that the measurement is performed after all manufacturing steps (such as coating and annealing) have been completed. To perform the hardness measurement, a metallographic cross section of the wire can be prepared to create a flat surface. This can be done in the longitudinal direction (more common) or in the lateral direction.

進一步有利地，本發明線之比電阻係在1.65μOhm*cm至1.9μOhm*cm範圍內，該導電性適於許多應用。線之更佳電阻率係在1.8μOhm*cm至1.9μOhm*cm範圍內。 Further advantageously, the specific resistance of the wire of the present invention is in the range of from 1.65 [mu]Ohm*cm to 1.9 [mu]Ohm*cm, which conductivity is suitable for many applications. The better resistivity of the wire is in the range of 1.8 μOhm*cm to 1.9 μOhm*cm.

本發明之再一態樣係用於接合電子器件之系統，其包含第一接合墊、第二接合墊及本發明線，其中藉助楔接合將線與至少一個接合墊連接。系統中本發明線之此組合較佳，此乃因該線對於楔接合具有尤其有益性質之事實。 A further aspect of the invention is a system for joining electronic devices comprising a first bond pad, a second bond pad and a wire of the invention, wherein the wire is joined to the at least one bond pad by a wedge bond. This combination of the inventive lines in the system is preferred due to the fact that the wire has particularly beneficial properties for wedge bonding.

一般較佳地，在將20μm直徑之線接合至金接合墊之接合情形下，至少一個楔接合之製程窗口面積具有至少3500mA*g之值。 Generally, in the case of bonding a 20 μm diameter wire to a gold bond pad, the at least one wedge bond process window area has a value of at least 3500 mA*g.

接合線之製程窗口面積之定義為本技術領域已知，且廣泛用於比較不同線。原則上，其係接合中所用之超音波能之接合窗口與接合中所用之力之接合窗口之乘積，其中所得接合必須滿足某些牽拉測試規格，例如3克之拉力、無引線不黏(non-stick on lead)等。給定線之製程窗口面積之實際值進一步取決於線直徑以及接合墊材料。為給出本發明線之性質之具體定義，所主張之製程窗口值係基於20μm=0.8密耳之線直徑，其中接合墊係由金組成。本發明系統之範疇並不限於此直徑之線及由金製成之接合墊，而係僅出於定義目的列舉此數據。 The definition of the process window area of the bond wires is known in the art and is widely used to compare different lines. In principle, it is the product of the joint window of the ultrasonic energy used in the joint and the joint window of the force used in the joint, wherein the resulting joint must meet certain pull test specifications, such as 3 grams of tension, no lead and no stick (non -stick on lead). The actual value of the process window area for a given line is further dependent on the wire diameter and the bond pad material. To give a specific definition of the nature of the wire of the present invention, the claimed process window values are based on a wire diameter of 20 μm = 0.8 mils, wherein the bond pads are composed of gold. The scope of the system of the present invention is not limited to this diameter line and bond pads made of gold, but this data is listed for purposes of definition only.

本發明之又一態樣係連接電器件之方法，其包含以下步驟：a.提供本發明之線；b.藉助球接合或楔接合將線與器件之第一接合墊接合；及c.藉助楔接合將線與器件之第二接合墊接合；其中在不使用形成氣體之情況下實施步驟b及c。 A further aspect of the invention is a method of joining an electrical device comprising the steps of: a. providing a wire of the invention; b. engaging a wire with a first bond pad of the device by ball or wedge bonding; and c. The wedge bond joins the wire to the second bond pad of the device; wherein steps b and c are performed without the use of a forming gas.

本發明之線展現關於氧化效應之優良性質。若用鈀塗覆層完全囊封之銅核心與核心材料中一定量之磷組合存在，則尤其如此。所得性質允許在不使用形成氣體之情況下處理，且因此顯著節約成本及危險預警。 The line of the invention exhibits excellent properties with respect to the oxidation effect. This is especially true if a fully encapsulated copper core with a palladium coating is present in combination with a certain amount of phosphorus in the core material. The resulting properties allow for processing without the use of forming gases, and thus significant cost and hazard warnings.

本技術領域內已知形成氣體為惰性氣體(如氮氣)與氫氣之混合物，其中氫氣內容物可提供經氧化線材料之還原反應。在本發明之意義上，省略形成氣體意味著不使用反應性化合物(如氫氣)。然而，使用惰性氣體(如氮氣)仍可為有利的。 It is known in the art to form a gas mixture of an inert gas (e.g., nitrogen) and hydrogen, wherein the hydrogen content provides a reduction reaction through the oxidized wire material. In the sense of the present invention, omitting the formation of a gas means not using a reactive compound such as hydrogen. However, it may still be advantageous to use an inert gas such as nitrogen.

本發明之又一態樣係製造本發明之接合線之方法，其包含以下步驟： a.提供具有所要求含量之磷及銀之銅核心前體；b.拉製該前體直至達到線核心之最終直徑；c.在拉製該前體之步驟b之前或之後，利用塗覆層之材料塗覆銅核心；d.使經塗覆及拉製之線在一定溫度下退火一段最少時間。 Yet another aspect of the invention is a method of making a bond wire of the present invention comprising the steps of: a. providing a copper core precursor having a desired level of phosphorus and silver; b. drawing the precursor until the final diameter of the core is reached; c. applying the coating before or after the step b of drawing the precursor The material of the layer is coated with a copper core; d. The coated and drawn wire is annealed at a temperature for a minimum period of time.

關於步驟b至c，製造方法為本技術領域內眾所周知。應指出，塗覆層可藉由任何已知或適宜方法來施加，如機械塗覆、電鍍覆、無電鍍覆、物理氣相沈積(PVD)、化學氣相沈積(CVD)及其他方法。塗覆可在拉製線之前或之後進行，此可取決於各別塗層之性質及塗覆方法。特定而言，塗覆可在中間步驟實施，且在塗覆步驟之前以及之後進行線或前體之拉製。 With regard to steps b to c, the manufacturing process is well known in the art. It should be noted that the coating layer can be applied by any known or suitable method such as mechanical coating, electroplating, electroless plating, physical vapor deposition (PVD), chemical vapor deposition (CVD), and the like. The coating can be carried out before or after the draw line, which can depend on the nature of the individual coatings and the method of application. In particular, the coating can be carried out in an intermediate step and the drawing of the thread or precursor is carried out before and after the coating step.

關於步驟a，可將磷摻雜至銅核心中，如本技術領域內已知。 With regard to step a, phosphorus can be doped into the copper core as is known in the art.

關於銀含量，可在核心材料之特定產生步驟中將銀添加至銅中。另一選擇為，銀含量可藉由選擇具有足夠雜質規格之可用銅來獲得。雖然不一定存在，但銀常作為雜質含於銅中，可在不施加其他製程步驟但分析控制原材料之情況下提供所要求之核心材料。 Regarding the silver content, silver may be added to the copper in a specific production step of the core material. Alternatively, the silver content can be obtained by selecting available copper having a sufficient impurity specification. Although not necessarily present, silver is often included as an impurity in copper, and the core material required can be provided without the application of other process steps but with analytical control of the raw materials.

關於步驟d，以本技術領域內已知之受控方式實施退火，以根據各別要求使線軟化及/或使線之晶體結構最佳化。較佳地，在使線移動穿過退火爐並在已離開爐後纏繞至捲上時以動態方式實施退火。 With respect to step d, annealing is performed in a controlled manner known in the art to soften the wire and/or optimize the crystal structure of the wire according to individual requirements. Preferably, the annealing is performed in a dynamic manner as the wire is moved through the annealing furnace and wound onto the roll after it has left the furnace.

測試方法 testing method

所有測試及量測皆在T=20℃及50%之相對濕度下實施。 All tests and measurements were performed at T = 20 ° C and 50% relative humidity.

導電性 Conductivity

將測試試樣(即長度為1.0m之線)之兩個末端與提供I=10mA之恆定電流之電源連接。利用量測電壓之器件記錄電壓。對至少4個測試試樣重複此設定。下文所給計算使用四次量測之算數平均值。 The two ends of the test specimen (i.e., the wire having a length of 1.0 m) were connected to a power source that supplied a constant current of I = 10 mA. The voltage is recorded by the device that measures the voltage. Repeat this setting for at least 4 test specimens. The arithmetic mean of the four measurements is used in the calculations given below.

根據R=U/I計算電阻R。 The resistance R is calculated from R=U/I.

根據ρ=(R×A)/1計算比電阻ρ，其中A係線之平均截面積，且1係在量測電壓之器件之兩個量測點之間之線長度。 The specific resistance ρ is calculated from ρ = (R × A) / 1, where the average cross-sectional area of the A-line is, and 1 is the line length between the two measurement points of the device that measures the voltage.

根據σ=1/ρ計算比導電率σ。 The specific conductivity σ is calculated from σ=1/ρ.

楔-楔接合-參數定義 Wedge-wedge joint-parameter definition

在20℃下實施線與鍍金基板之接合，其中將該接合施加至金表面。在線與基板間形成具有45°角之第一楔接合後，將線以其第二末端楔入至基板。線之兩個末端之間之接合距離係在5mm至20mm範圍內。此距離係經選擇以確保在線與基板之間之角為45°。在楔接合期間，將頻率在60kHz至120kHz範圍內之超音波施加至接合工具40毫秒至500毫秒。 Bonding of the wire to the gold plated substrate was carried out at 20 ° C, wherein the bond was applied to the gold surface. After the first wedge bond having an angle of 45[deg.] is formed between the wire and the substrate, the wire is wedged to the substrate with its second end. The joining distance between the two ends of the wire is in the range of 5 mm to 20 mm. This distance is chosen to ensure that the angle between the line and the substrate is 45°. Ultrasonic waves having a frequency in the range of 60 kHz to 120 kHz are applied to the bonding tool for 40 milliseconds to 500 milliseconds during wedge bonding.

實例 Instance

藉由實例進一步例示本發明。該等實例用於實例性闡明本發明，且並不意欲以任何方式限制本發明或申請專利範圍之範疇。 The invention is further illustrated by way of examples. The examples are intended to be illustrative of the invention and are not intended to limit the scope of the invention or the scope of the claims.

實例1Example 1

在坩堝中熔融一定量之至少99.99%純度之銅材料(「4N-銅」)。將少量銀(Ag)及磷(P)添加至熔體中，並使所添加組份在銅熔體中均勻分佈。計算銀及磷之添加量以達成10ppm Ag及75ppm P之份數。然後自熔體澆注線核心前體。 A certain amount of copper material ("4N-copper") of at least 99.99% purity is melted in the crucible. A small amount of silver (Ag) and phosphorus (P) were added to the melt, and the added components were uniformly distributed in the copper melt. The amount of silver and phosphorus added was calculated to achieve a fraction of 10 ppm Ag and 75 ppm P. The core precursor is then cast from the melt.

然後在若干個拉製步驟中拉製線核心前體，以形成直徑為20μm之線核心2。線核心2之截面基本上為圓形。應理解，因截面形狀、塗覆層厚度或諸如此類之波動，線直徑不應視為極確切之值。若目前界定線具有(例如)20μm之直徑，則該直徑應理解為在19.5μm至20.5μm範圍內。 The wire core precursor is then drawn in several drawing steps to form a wire core 2 having a diameter of 20 μm. The cross section of the wire core 2 is substantially circular. It should be understood that the wire diameter should not be regarded as a very exact value due to the cross-sectional shape, the thickness of the coating layer, or the like. If the currently defined line has a diameter of, for example, 20 μm, this diameter is understood to be in the range of 19.5 μm to 20.5 μm.

然後利用由至少99%純度之鈀(Pd)組成之層3塗覆線核心。塗覆層3之厚度係在100nm或更小範圍內。因此，塗覆層並不顯著增加線直徑。 The wire core is then coated with a layer 3 consisting of at least 99% pure palladium (Pd). The thickness of the coating layer 3 is in the range of 100 nm or less. Therefore, the coating layer does not significantly increase the wire diameter.

然後在退火步驟中使經塗覆線退火以進一步調整如伸長率、硬度、晶體結構及諸如此類之參數。藉由使線以確定速度穿過具有確定長度及溫度之退火爐以動態方式來實施退火。在離開爐後，將線纏繞於捲上用於封裝。 The coated wire is then annealed in an annealing step to further adjust parameters such as elongation, hardness, crystal structure, and the like. Annealing is performed in a dynamic manner by passing the wire to a speed through an annealing furnace having a defined length and temperature. After leaving the furnace, the wire is wound onto a roll for packaging.

在本發明實例中，退火時間(即移動線之給定的一段保持在加熱爐中之時間)為約0.76s。 In the present example, the annealing time (i.e., the time during which a given portion of the moving line is maintained in the furnace) is about 0.76 s.

表1及表2顯示本發明線之若干個實例IW1至IW5之數據。實例性本發明線係以相同方式產生，在退火步驟中使其單獨暴露於不同退火溫度下。除溫度以外之其他退火參數不作改變。 Tables 1 and 2 show data for several examples IW1 to IW5 of the present invention. EXAMPLES The wire of the present invention is produced in the same manner and exposed separately to different annealing temperatures during the annealing step. The annealing parameters other than temperature are not changed.

此外，表1及2顯示市售接合線比較1及比較2之兩個樣品之數 據。由於該等線之確切製程係未知的，故未獲得退火溫度之數據。所評價之所有線(本發明線及比較線)均具有0.8密耳=20μm之直徑。 In addition, Tables 1 and 2 show the number of two samples of commercially available bond wire comparison 1 and comparison 2 according to. Since the exact process of the lines is unknown, no data on the annealing temperature is obtained. All of the lines evaluated (the lines of the invention and the comparison lines) each have a diameter of 0.8 mils = 20 μm.

其中：E伸長率(%) Where: E elongation (%)

BL 斷裂負載(克) BL breaking load (g)

T 退火溫度(℃) T annealing temperature (°C)

d 直徑(對於所有線，=20μm) d diameter (=20μm for all lines)

CP 磷濃度(ppm) CP phosphorus concentration (ppm)

CAg 銀濃度(ppm) CAg silver concentration (ppm)

備註：「球形」性質係以目測方式評價並分類成四個種類(品質遞減)：最好-良好-一般-差。其係在對於所評價之所有線而言均相同之標準條件下實施之球接合之球之形狀。 Remarks: The "spherical" nature is evaluated visually and classified into four categories (declining quality): best-good-general-poor. It is the shape of the ball-bonded ball that is implemented under standard conditions that are the same for all of the evaluated lines.

第二接合窗口USG(=超音波能)值通常較佳具有較低起始點(較低值)。 The second junction window USG (=ultrasonic energy) value typically preferably has a lower starting point (lower value).

表1及表2之數據之評價顯示，本發明線的一些性質傑出，同時所評價之所有性質至少維持良好品質。 Evaluation of the data in Tables 1 and 2 shows that some of the properties of the present invention are outstanding, while all properties evaluated are at least maintained in good quality.

特定而言，本發明線通常顯示高第二接合窗口面積值，即4000或更高。對於比較實例，線比較2亦顯示高第二接合窗口面積，但其尾部拉力值具有高標準偏差，此對製程穩定性不利。此外，比較2樣品具有顯著較差之球形值。當與本發明線相比時，至少對於球接合應用，不會選擇線比較2。 In particular, the lines of the invention typically exhibit a high second joint window area value, i.e., 4000 or higher. For the comparative example, line comparison 2 also shows a high second joint window area, but its tail pull value has a high standard deviation, which is detrimental to process stability. In addition, the comparison 2 sample had a significantly poor spherical value. Line comparison 2 is not selected when compared to the inventive line, at least for ball bonding applications.

對於另一比較線比較1，第二接合窗口面積顯著低於任一本發明線。此使得本發明線尤其有利於第二接合或楔接合應用。本發明線可為楔-楔接合應用之較佳選擇，但對於球-楔接合應用亦顯示優良結果。 For another comparison line comparison 1, the second junction window area is significantly lower than either of the inventive lines. This makes the wire of the invention particularly advantageous for second or wedge bonding applications. The wire of the present invention may be a preferred choice for wedge-wedge bonding applications, but also exhibits excellent results for ball-wedge bonding applications.

應注意，實例IW5具有一些突出性質，例如伸長率值及/或線硬度值。此係由於此線已在400℃之略低溫度下退火之事實所致。退火製程之軟化效應在此範圍內同等較弱。另一方面，該線可有利於特殊應用，例如當要求尤其良好之球形或高斷裂負載時。 It should be noted that Example IW5 has some outstanding properties such as elongation values and/or line hardness values. This is due to the fact that this line has been annealed at a slightly lower temperature of 400 °C. The softening effect of the annealing process is equally weak in this range. On the other hand, the wire can be advantageous for special applications, for example when a particularly good spherical or high breaking load is required.

然而，在大多數應用中，較高伸長率值及較低線硬度係有利的。在此態樣及其他態樣中，IW1至IW4為本發明線之尤佳實例。 However, in most applications, higher elongation values and lower line hardness are advantageous. In this and other aspects, IW1 to IW4 are preferred examples of the invention.

1‧‧‧線 Line 1‧‧

2‧‧‧銅核心 2‧‧‧ copper core

3‧‧‧塗覆層 3‧‧‧ coating

10‧‧‧電器件 10‧‧‧Electrical devices

11‧‧‧元件 11‧‧‧ components

15‧‧‧表面 15‧‧‧ surface

17‧‧‧牽拉鉤 17‧‧‧ Pull hook

19‧‧‧角 19‧‧‧ corner

20‧‧‧基板 20‧‧‧Substrate

21‧‧‧接合 21‧‧‧ Engagement

23‧‧‧中心 23‧‧‧ Center

L‧‧‧線條 L‧‧‧ lines

在圖中例示本發明之標的物。然而，各圖並不意欲以任何方式限制本發明或申請專利範圍之範疇。 The subject matter of the invention is illustrated in the drawings. However, the drawings are not intended to limit the scope of the invention or the scope of the claims.

在圖1中，繪示線1。 In Figure 1, line 1 is shown.

圖2顯示線1之截面視圖。在該截面視圖中，銅核心2係處於截面視圖中央。塗覆層3環繞銅核心2。銅核心之表面15定位於在銅線2界限上。在穿過線1之中心23的線條L上，銅核心2之直徑係顯示為線條 L與表面15之交叉點間之末端距。線1之直徑為穿過中心23之線條L與線1之外部界限之交叉點間的末端距。此外，繪示塗覆層3之厚度。 Figure 2 shows a cross-sectional view of line 1. In this cross-sectional view, the copper core 2 is in the center of the cross-sectional view. The coating layer 3 surrounds the copper core 2. The surface 15 of the copper core is positioned on the boundary of the copper wire 2. On the line L passing through the center 23 of the line 1, the diameter of the copper core 2 is shown as a line The end distance between the intersection of L and surface 15. The diameter of the line 1 is the end distance between the intersection of the line L passing through the center 23 and the outer limit of the line 1. Further, the thickness of the coating layer 3 is shown.

圖3顯示用於製造本發明線之製程。 Figure 3 shows a process for making the wire of the present invention.

圖4繪示包含兩個元件11及線1之電器件10。線1電連接兩個元件11。虛線意指連接元件11與包圍元件11之封裝器件之外部配線之其他連接或電路。元件11可包含接合墊、積體電路、LED或諸如此類。 FIG. 4 illustrates an electrical device 10 including two components 11 and a wire 1. Line 1 electrically connects the two elements 11. The dashed line refers to other connections or circuits connecting the component 11 to the external wiring of the packaged device surrounding the component 11. Element 11 can include bond pads, integrated circuits, LEDs, or the like.

圖5顯示線牽拉測試之草圖。將線1以45°之角19接合至基板20上之接合21中。牽拉鉤17牽拉線1。當牽拉鉤17牽拉線1時所形成之角22為90°。 Figure 5 shows a sketch of the line pull test. The wire 1 is joined to the joint 21 on the substrate 20 at an angle of 45°. The pulling hook 17 pulls the wire 1. The angle 22 formed when the pulling hook 17 pulls the wire 1 is 90°.

1‧‧‧線 Line 1‧‧

2‧‧‧銅核心 2‧‧‧ copper core

3‧‧‧塗覆層 3‧‧‧ coating

15‧‧‧表面 15‧‧‧ surface

23‧‧‧中心 23‧‧‧ Center

L‧‧‧線條 L‧‧‧ lines

Claims (19)

一種接合線，其包含：具有表面之核心(2)，其中該核心(2)包含銅作為主要組份，及疊加於該核心(2)之該表面(15)上之塗覆層(3)，其中該塗覆層(3)包含鈀作為主要組份，其中該核心(2)包含至少5ppm銀及至少20ppm磷作為其他組份，其中該線滿足關係0.000025<E/(d*CAg)<0.15，其中E係以%量測之該線之伸長率，d係以μm量測之該線之直徑，且CAg係以ppm量測之該線核心(2)之該銀含量。 A bonding wire comprising: a core (2) having a surface, wherein the core (2) comprises copper as a main component, and a coating layer (3) superposed on the surface (15) of the core (2) Wherein the coating layer (3) comprises palladium as a main component, wherein the core (2) comprises at least 5 ppm of silver and at least 20 ppm of phosphorus as other components, wherein the line satisfies the relationship 0.000025 < E / (d * CAg) < 0.15, where E is the elongation of the wire measured in %, d is the diameter of the wire measured in μm, and CAg is the silver content of the wire core (2) measured in ppm. 如請求項1之線，其中該核心(2)之該銀含量與磷含量之間之比係在0.03至2之範圍內。 As in the line of claim 1, wherein the ratio of the silver content to the phosphorus content of the core (2) is in the range of 0.03 to 2. 如請求項1之線，其中該磷含量係在20ppm至300ppm範圍內。 The line of claim 1 wherein the phosphorus content is in the range of from 20 ppm to 300 ppm. 如前述請求項中任一項之線，其中該銀含量係在5ppm至1000ppm範圍內。 A line according to any one of the preceding claims, wherein the silver content is in the range of from 5 ppm to 1000 ppm. 如前述請求項中任一項之線，其中該核心(2)之銅含量為至少99.98%。 A line according to any one of the preceding claims, wherein the core (2) has a copper content of at least 99.98%. 如前述請求項中任一項之線，其中該塗覆層(3)具有小於0.5μm之厚度。 A line according to any of the preceding claims, wherein the coating layer (3) has a thickness of less than 0.5 μm. 如前述請求項中任一項之線，其中該塗覆層(3)之鈀含量為至少95%。 A line according to any one of the preceding claims, wherein the coating layer (3) has a palladium content of at least 95%. 如前述請求項中任一項之線，其中該線(1)具有在8μm至80μm範圍內之直徑。 A line according to any one of the preceding claims, wherein the line (1) has a diameter in the range of 8 μm to 80 μm. 如前述請求項中任一項之線，其中該線(1)之伸長率與該線(1)之直徑之比係在0.25%/μm至0.75%/μm範圍內。 A line according to any one of the preceding claims, wherein the ratio of the elongation of the line (1) to the diameter of the line (1) is in the range of 0.25%/μm to 0.75%/μm. 如前述請求項中任一項之線，其中該線滿足關係0.0008<E/(d*CP)<0.0375，其中E係以%量測之該線(1)之伸長率，d係以μm量測之該線之直徑，且CP係以ppm量測之該線核心(2)之該磷含量。 A line according to any one of the preceding claims, wherein the line satisfies the relationship 0.0008 < E / (d * CP) < 0.0375, wherein E is the elongation of the line (1) measured in %, and d is in the amount of μm The diameter of the line is measured, and the CP is the phosphorus content of the core (2) measured in ppm. 如前述請求項中任一項之線，其中該線(1)已在退火步驟中經至少370℃之溫度處理。 A line according to any of the preceding claims, wherein the line (1) has been treated at a temperature of at least 370 ° C in the annealing step. 如前述請求項中任一項之線，其中該線核心(2)之硬度不大於120.00 Hv0.5。 A line according to any one of the preceding claims, wherein the wire core (2) has a hardness of no greater than 120.00 Hv 0.5. 如前述請求項中任一項之線，其中該線(1)之比電阻係在1.8μOhm*cm至1.9μOhm*cm範圍內。 A line according to any one of the preceding claims, wherein the specific resistance of the line (1) is in the range of from 1.8 μOhm*cm to 1.9 μOhm*cm. 一種用於接合電子器件之系統，其包含第一接合墊(11)、第二接合墊(11)及如前述請求項中任一項之線(1)，其中該線(1)係藉助楔接合與該等接合墊(11)中之至少一者連接。 A system for engaging an electronic device, comprising a first bond pad (11), a second bond pad (11), and a line (1) according to any of the preceding claims, wherein the line (1) is by means of a wedge Bonding is coupled to at least one of the bond pads (11). 如請求項14之系統，其中該線(1)係藉助楔接合與兩個接合墊(11)連接。 The system of claim 14, wherein the wire (1) is joined to the two bond pads (11) by a wedge bond. 如請求項14或15之系統，其中在將20μm直徑之線與金接合墊接合之情形下，該至少一個楔接合之製程窗口面積具有至少3500mA*g之值。 The system of claim 14 or 15, wherein the process window area of the at least one wedge bond has a value of at least 3500 mA*g in the case of joining a 20 μm diameter wire to the gold bond pad. 如請求項14至16中任一項之系統，其中該等接合墊(11)中之一者之基礎結構包含至少一個多孔二氧化矽層。 The system of any one of claims 14 to 16, wherein the base structure of one of the bond pads (11) comprises at least one porous ceria layer. 一種用於連接電器件之方法，其包含以下步驟：a.提供如請求項1至14中任一項之線(1)；b.藉助球接合或楔接合將該線(1)與該器件之第一接合墊(11)接合；及 c.藉助楔接合將該線(1)與該器件之第二接合墊(11)接合；其中在不使用形成氣體之情況下實施步驟b及c。 A method for connecting an electrical device, comprising the steps of: a. providing a wire (1) according to any one of claims 1 to 14; b. bonding the wire (1) to the device by ball bonding or wedge bonding The first bonding pad (11) is joined; and c. Joining the wire (1) to the second bond pad (11) of the device by means of a wedge bond; wherein steps b and c are carried out without the use of a forming gas. 一種用於製造如請求項1至13中任一項之接合線之方法，其包含以下步驟：a.提供具有所要求含量之磷及銀之銅核心前體；b.拉製該前體直至達到該線核心(2)之最終直徑為止；c.在拉製該前體之該步驟b之前或之後利用塗覆層(3)之材料塗覆該銅核心(2)；d.使該經塗覆及拉製之線(1)在一定溫度下退火一段最少退火時間。 A method for producing a bonding wire according to any one of claims 1 to 13, comprising the steps of: a. providing a copper core precursor having a desired content of phosphorus and silver; b. drawing the precursor until Up to the final diameter of the core (2) of the wire; c. coating the copper core (2) with the material of the coating layer (3) before or after the step b of drawing the precursor; d. The coated and drawn wire (1) is annealed at a temperature for a minimum annealing time.
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