TW201503253A - Processing method of wafer - Google Patents
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- TW201503253A TW201503253A TW103114871A TW103114871A TW201503253A TW 201503253 A TW201503253 A TW 201503253A TW 103114871 A TW103114871 A TW 103114871A TW 103114871 A TW103114871 A TW 103114871A TW 201503253 A TW201503253 A TW 201503253A
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Abstract
Description
本發明是有關於一種晶圓之加工方法，是將在基板表面所積層之功能層上以形成格子狀的多數條分割預定線所劃分出的多個區域中形成有元件的晶圓，沿著分割預定線進行分割。 The present invention relates to a method for processing a wafer, which is a wafer in which a plurality of regions are formed in a plurality of regions defined by a plurality of predetermined dividing lines formed in a lattice shape on a functional layer laminated on a surface of a substrate. Split the predetermined line for segmentation.
如本領域業者所周知，在半導體元件製程中，是藉由在矽等基板的表面積層絕緣膜與功能膜的功能層，而形成將複數個IC、LSI等元件形成矩陣狀的半導體晶圓。如此所形成之半導體晶圓是使上述元件受到形成格子狀之分割預定線區隔劃分，並可沿著此分割預定線進行分割，而製造出一個個的半導體元件。 As is well known in the art, in a semiconductor device process, a semiconductor wafer in which a plurality of ICs, LSIs, and the like are formed in a matrix is formed by a functional layer of a surface insulating film and a functional film on a surface of a substrate such as a germanium. The semiconductor wafer thus formed is formed by dividing the element by a predetermined dividing line which is formed in a lattice shape, and is divided along the dividing line to produce a single semiconductor element.
最近，因為IC、LSI等半導體晶片的處理能力提升，透過在矽等基板表面由SiOF、BSG(SiOB)等無機物類的薄膜以及聚醯亞胺類、聚對二甲苯(parylene)類等聚合物薄膜之有機物類薄膜所構成之低介電常數絕緣體被覆膜(Low-k膜)所積層而成的功能層，使得已形成半導體元件形 態的半導體晶圓獲得實用化。 Recently, the processing capacity of semiconductor wafers such as ICs and LSIs has been improved, and films such as inorganic films such as SiOF and BSG (SiOB), and polymers such as poly-imines and parylenes have been used on the surface of substrates such as germanium. a functional layer formed by laminating a low dielectric constant insulator film (Low-k film) composed of a thin film organic film, so that a semiconductor element shape has been formed The state of the semiconductor wafer has been put into practical use.
沿著這類半導體晶圓的分割預定線所進行的分割，通常是以一種稱之為切割機(dicer)的切削裝置來進行。這種切削裝置具備保持被加工物之半導體晶圓的夾頭台、用於切削被保持在該夾頭台上之半導體晶圓的切削機構、以及使夾頭台與切削機構相對移動的移動機構。切削機構包含了使其高速旋轉的旋轉轉軸與裝設在該轉軸上的切削刀。切削刀是由圓盤狀之基台與裝在該基台側面外周部的環狀切割刃所構成，切割刃藉由電鑄將例如粒徑3μm左右的金鋼石研磨粒加以固定而形成30μm左右的厚度。 The segmentation along the dividing line of such a semiconductor wafer is usually performed by a cutting device called a dicer. Such a cutting device includes a chuck table for holding a semiconductor wafer of a workpiece, a cutting mechanism for cutting a semiconductor wafer held on the chuck table, and a moving mechanism for moving the chuck table and the cutting mechanism relative to each other . The cutting mechanism includes a rotary shaft that rotates at a high speed and a cutter that is mounted on the shaft. The cutting blade is composed of a disk-shaped base and an annular cutting blade attached to the outer peripheral portion of the side surface of the base. The cutting edge is fixed by electroforming to, for example, a diamond abrasive grain having a particle diameter of about 3 μm to form a 30 μm. The thickness of the left and right.
然而，上述Low-k膜要用切削刀來切削是有困難的。亦即，因Low-k膜像雲母般非常的脆弱，若以切削刀沿著分割預定線切削時，Low-k膜會剝離，存有該剝離到達電路而對元件造成致命的損傷的問題。 However, it is difficult to cut the above Low-k film with a cutter. That is, since the Low-k film is extremely fragile like mica, when the cutting blade is cut along the dividing line, the Low-k film peels off, and there is a problem that the peeling reaches the circuit and causes fatal damage to the element.
為了解決上述問題，已於下述專利文獻1中揭示的晶圓之分割方法為，沿著形成於半導體晶圓上之分割預定線照射雷射光線、沿著分割預定線形成雷射加工溝以分割開功能層、藉由將切削刀定位在該雷射加工溝處並相對移動切削刀與半導體晶圓，以沿分割預定線切斷半導體晶圓。 In order to solve the above problem, the method of dividing a wafer disclosed in Patent Document 1 below is to irradiate a laser beam along a predetermined dividing line formed on a semiconductor wafer and form a laser processing groove along a dividing line. The functional layer is divided, and the semiconductor wafer is cut along the predetermined dividing line by positioning the cutting tool at the laser processing groove and relatively moving the cutting blade and the semiconductor wafer.
專利文獻1：日本專利特開2005-64231號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2005-64231
然而，如上述專利文獻1中所記載地，藉由沿著半導體晶圓上所形成之分割預定線照射雷射光線，而可沿著分割預定線形成雷射加工溝以分割開功能層，並將切削刀定位在該雷射加工溝處以沿著分割預定線切斷半導體晶圓的晶圓之分割方法，會有以下的問題。 However, as described in the above Patent Document 1, by irradiating the laser beam along the dividing line formed on the semiconductor wafer, the laser processing groove can be formed along the dividing line to divide the functional layer, and The method of arranging the cutting blade at the laser processing groove to cut the wafer of the semiconductor wafer along the predetermined dividing line has the following problems.
(1)即使雷射加工溝寬度足夠，還是會在切削刀接觸到附著於雷射加工溝側面的熔融物時突發性地在元件外周處產生缺陷。 (1) Even if the width of the laser processing groove is sufficient, a defect is suddenly generated at the outer periphery of the element when the cutting blade comes into contact with the melt attached to the side surface of the laser processing groove.
(2)形成雷射加工溝時若功能層的去除不充分，則會發生切削刀的偏移與傾斜而在元件的功能層產生剝離。 (2) If the removal of the functional layer is insufficient when forming the laser processing groove, the offset and inclination of the cutting blade may occur and peeling may occur in the functional layer of the element.
(3)為了以超過切削刀寬度的範圍形成雷射加工溝時，必須加大分割預定線的寬度，會使形成於晶圓上的元件數減少。 (3) In order to form the laser processing groove in a range exceeding the width of the cutting blade, it is necessary to increase the width of the dividing line to be formed, and the number of components formed on the wafer is reduced.
(4)功能層表面因為形成有含有SiO2、SiN等之鈍化膜(passivation film)，故當照射雷射光線時會穿透鈍化膜到達功能層內部。其結果是，到達功能層內部之雷射光線的能量會失去散逸的空間，而在形成有電路且密度低的元件側發生使加工擴大的所謂過切(undercut)現象。 (4) Since the surface of the functional layer is formed with a passivation film containing SiO 2 , SiN or the like, it penetrates the passivation film to reach the inside of the functional layer when the laser beam is irradiated. As a result, the energy of the laser light reaching the inside of the functional layer loses the space for dissipation, and a so-called undercut phenomenon that enlarges the processing occurs on the side of the element on which the circuit is formed and has a low density.
本發明是有鑒於上述事實而作成者，其主要技術課題在於提供一種晶圓之加工方法，可將積層於基板表面之功能層上以形成格子狀的多數條分割預定線所劃分的多個區域中形成有元件的晶圓，在解決上述問題下分割成一 個個的元件。 The present invention has been made in view of the above circumstances, and a main technical object thereof is to provide a method for processing a wafer, which is capable of forming a plurality of regions divided by a plurality of predetermined dividing lines formed in a lattice shape on a functional layer on a surface of a substrate. a wafer in which a component is formed, which is divided into one under the above problem Individual components.
為了解決上述主要技術課題，利用本發明所提供的晶圓之加工方法，是一種將積層於基板表面之功能層上以形成格子狀的多數條分割預定線所劃分的多個區域中形成有元件的晶圓，沿分割預定線進行分割的晶圓之加工方法，其特徵在於包含：保護構件黏貼步驟，在構成晶圓之功能層表面黏貼保護構件；改質層形成步驟，將實施過該保護構件黏貼步驟之晶圓的該保護構件側保持於夾頭台上，並從基板的背面側在與分割預定線相對應之區域中將對基板具穿透性波長的雷射光線的聚光點定位於內部以進行照射，而在基板內部沿著分割預定線形成成為分割起點的改質層；晶圓支撐步驟，在構成實施過該改質層形成步驟之晶圓的基板背面黏貼切割膠帶(dicing tape)，並以環狀框架支撐切割膠帶的外周部，同時將該保護構件剝離；功能層切斷步驟，沿著在構成實施過該晶圓支撐步驟之晶圓的功能層上所形成的分割預定線照射雷射光線，將功能層燒蝕(ablasion)加工以切斷。 In order to solve the above-mentioned main technical problems, the wafer processing method according to the present invention is a method in which a plurality of regions are formed in a plurality of regions divided by a plurality of predetermined dividing lines formed on a functional layer of a surface of a substrate to form a lattice. a wafer processing method for dividing a wafer along a predetermined dividing line, comprising: a protective member pasting step, attaching a protective member to a surface of a functional layer constituting the wafer; and a reforming layer forming step, the protective layer is implemented The protective member side of the wafer of the component pasting step is held on the chuck stage, and the light collecting point of the laser beam having a penetrating wavelength to the substrate is obtained from the back side of the substrate in a region corresponding to the dividing line. The inside of the substrate is irradiated, and a modified layer which is a starting point of the division is formed along the dividing line in the substrate; and the wafer supporting step is to adhere the cutting tape to the back surface of the substrate constituting the wafer on which the modified layer forming step is performed ( Diching tape) and supporting the outer peripheral portion of the dicing tape with an annular frame while peeling off the protective member; the functional layer cutting step is performed along the configuration The predetermined dividing line formed on the functional layer of the wafer supporting the wafer supporting step irradiates the laser beam, and the functional layer is ablasion processed to be cut.
上述的晶圓支撐步驟，是在保持於夾頭台上而構成實施過上述改質層形成步驟之晶圓的基板背面，黏貼已裝設在環狀框架上的切割膠帶。 In the wafer supporting step described above, the back surface of the substrate on which the wafer for performing the reforming layer formation step is formed is held on the chuck table, and the dicing tape attached to the annular frame is adhered.
此外，上述晶圓支撐步驟，是藉由第1吸引保持墊將保 持於夾頭台上而構成實施過上述改質層形成步驟之晶圓的基板的背面整面吸引保持，而將晶圓從夾頭台搬出，然後將晶圓轉移至可將構成晶圓之功能層的表面所黏貼的保護構件整面吸引保持住之第2吸引保持墊上後，在構成晶圓之基板背面黏貼已裝設在環狀框架上的切割膠帶。 In addition, the above wafer supporting step is secured by the first attraction holding pad. Holding and holding the back surface of the substrate constituting the wafer on which the modified layer forming step is performed on the chuck stage, the wafer is carried out from the chuck stage, and then the wafer is transferred to the wafer After the protective member adhered to the surface of the functional layer is attracted to the second suction holding pad, the dicing tape attached to the annular frame is adhered to the back surface of the substrate constituting the wafer.
在本發明的晶圓之加工方法中，由於包含了可將已黏貼於構成晶圓之功能層表面的保護構件側保持在夾頭台上，且從基板的背面側在與分割預定線相對應之區域中，將對基板具有穿透性波長的雷射光線的聚光點定位於內部以進行照射，而在基板內部沿著分割預定線形成成為分割起點之改質層的改質層形成步驟；和在構成已實施過該改質層形成步驟之晶圓的基板背面黏貼切割膠帶並以環狀框架來支撐切割膠帶的外周部，同時將該保護構件剝離的晶圓支撐步驟；和沿著在構成已實施過該晶圓支撐步驟之晶圓的功能層上所形成的分割預定線照射雷射光線，將功能層燒蝕加工以切斷的功能層切斷步驟，因而能獲得以下的作用效果。 In the method of processing a wafer of the present invention, the protective member side that has been adhered to the surface of the functional layer constituting the wafer is held on the chuck stage, and corresponds to the planned dividing line from the back side of the substrate. In the region, the concentrating layer of the laser beam having the penetrating wavelength of the substrate is positioned inside to be irradiated, and the reforming layer forming step of forming the modified layer as the starting point of the division along the dividing line is formed inside the substrate And a wafer supporting step of adhering the dicing tape on the back surface of the substrate constituting the wafer on which the reforming layer forming step has been performed and supporting the outer peripheral portion of the dicing tape with an annular frame while peeling off the protective member; The following steps are performed by irradiating the laser beam with the dividing line formed on the functional layer of the wafer on which the wafer supporting step has been performed, and activating the functional layer to cut the functional layer. effect.
(1)即使透過雷射加工步驟的燒蝕加工而在功能層上所形成的雷射加工溝的側面附著熔融物，由於不會用切削刀來切削雷射加工溝，故因切削刀之接觸而突發性地在元件的外周產生缺陷的問題得以解決。 (1) Even if the molten material adheres to the side surface of the laser processing groove formed on the functional layer by the ablation processing of the laser processing step, since the laser processing groove is not cut by the cutting blade, the contact of the cutting blade The problem of sudden occurrence of defects on the periphery of the component is solved.
(2)即使在雷射加工步驟的燒蝕加工中的功能層之去除不充分，只要能讓雷射加工溝到達形成於基板內部的改質 層，便能將晶圓分割成一個個的元件，且由於不用切削刀切削雷射加工溝，故在功能層產生剝離之問題得以解決。 (2) Even if the removal of the functional layer in the ablation processing of the laser processing step is insufficient, as long as the laser processing groove can be modified to be formed inside the substrate The layer can be used to divide the wafer into individual components, and since the laser processing groove is not cut by the cutter, the problem of peeling off in the functional layer can be solved.
(3)由於不需要形成寬度超出切削刀的寬度的雷射加工溝，因此可將分割預定線的寬度作窄，而可以增加可在晶圓內形成之元件的數量。 (3) Since it is not necessary to form a laser processing groove having a width exceeding the width of the cutting blade, the width of the dividing line can be narrowed, and the number of components which can be formed in the wafer can be increased.
(4)即使在功能層表面形成含SiO2、SiN等的鈍化膜，當在雷射加工步驟中沿著分割預定線對功能層照射雷射光線時，由於能量可散逸到已形成在基板內部之改質層中，故所謂的過切問題便得以解決。 (4) Even if a passivation film containing SiO 2 , SiN or the like is formed on the surface of the functional layer, when the functional layer is irradiated with the laser beam along the dividing line in the laser processing step, since the energy can be dissipated to be formed inside the substrate In the modified layer, the so-called overcut problem can be solved.
2‧‧‧半導體晶圓 2‧‧‧Semiconductor wafer
2b、20b‧‧‧背面 2b, 20b‧‧‧ back
20‧‧‧基板 20‧‧‧Substrate
20a、21a、50a‧‧‧表面 20a, 21a, 50a‧‧‧ surface
21‧‧‧功能層 21‧‧‧ functional layer
22‧‧‧分割預定線 22‧‧‧Division line
23‧‧‧元件 23‧‧‧ components
210‧‧‧改質層 210‧‧‧Modified layer
220‧‧‧雷射加工溝 220‧‧‧Laser processing ditch
3‧‧‧保護構件 3‧‧‧Protection components
4‧‧‧雷射加工裝置 4‧‧‧ Laser processing equipment
41‧‧‧夾頭台 41‧‧‧ chuck table
42‧‧‧雷射光線照射機構 42‧‧‧Laser light irradiation mechanism
421‧‧‧套管 421‧‧‧ casing
422‧‧‧聚光器 422‧‧‧ concentrator
43‧‧‧攝像機構 43‧‧‧ camera organization
5‧‧‧環狀框架 5‧‧‧Ring frame
50‧‧‧切割膠帶 50‧‧‧Cut Tape
500‧‧‧膠帶黏貼裝置 500‧‧‧ Tape Adhesive Device
501‧‧‧台座 501‧‧‧ pedestal
51‧‧‧開口部 51‧‧‧ openings
6‧‧‧第1吸引保持墊 6‧‧‧1st attraction retention pad
61、71‧‧‧基台 61, 71‧‧‧ abutments
611、711‧‧‧凹部 611, 711‧‧ ‧ recess
62、72‧‧‧墊塊 62, 72‧‧‧ ‧ blocks
7‧‧‧第2吸引保持墊 7‧‧‧2nd attraction retention pad
8‧‧‧元件分離裝置 8‧‧‧Component separation device
81‧‧‧框架保持機構 81‧‧‧Framekeeping agency
811‧‧‧框架保持構件 811‧‧‧Frame holding members
811a、911a‧‧‧載置面 811a, 911a‧‧‧ mounting surface
812‧‧‧夾具 812‧‧‧ fixture
82‧‧‧膠帶擴張機構 82‧‧‧ tape expansion mechanism
821‧‧‧擴張滾筒 821‧‧‧Expansion roller
822‧‧‧支撐凸緣 822‧‧‧Support flange
823‧‧‧支撐構件 823‧‧‧Support members
823a‧‧‧氣缸 823a‧‧ ‧ cylinder
823b‧‧‧活塞桿 823b‧‧‧ piston rod
83‧‧‧拾取式夾頭 83‧‧‧ pick-up chuck
P‧‧‧聚光點 P‧‧‧ spotlight
LB‧‧‧脈衝雷射光線 LB‧‧‧pulse laser light
X1、X2、X、Y‧‧‧箭形符號 X1, X2, X, Y‧‧‧ arrow symbols
圖1(a)、(b)為立體圖及主要部位放大截面圖，表示以本發明的晶圓之加工方法所分割的半導體晶圓；圖2(a)、(b)為本發明的晶圓之加工方法中的保護構件黏貼步驟的說明圖；圖3為用於實施本發明的晶圓之加工方法中的改質層形成步驟之雷射加工裝置的主要部位立體圖；圖4(a)、(b)為本發明的晶圓之加工方法中的改質層形成步驟的說明圖；圖5(a)~(c)為說明圖，表示本發明的晶圓之加工方法中的晶圓支撐步驟的第1實施形態；圖6(a)、(b)為說明圖，表示本發明的晶圓之加工方法中的晶圓支撐步驟的第2實施形態；圖7(a)、(b)為說明圖，表示本發明的晶圓之加工方法中的晶圓支撐步驟的第2實施形態； 圖8(a)、(b)為說明圖，表示本發明的晶圓之加工方法中的晶圓支撐製程的第2實施形態；圖9為用於實施本發明的晶圓之加工方法中的功能層切斷步驟之雷射加工裝置的主要部位立體圖；圖10(a)~(c)為本發明的晶圓之加工方法中的功能層切斷步驟的說明圖；圖11為用於實施本發明的晶圓之加工方法中的元件分離步驟之元件分離裝置的立體圖；及圖12(a)~(c)為本發明的晶圓之加工方法中的元件分離步驟的說明圖。 1(a) and 1(b) are perspective views and enlarged cross-sectional views of main parts, showing semiconductor wafers divided by the wafer processing method of the present invention; and Figs. 2(a) and (b) are wafers of the present invention; FIG. 3 is a perspective view of a main part of a laser processing apparatus for performing a reforming layer forming step in the method for processing a wafer of the present invention; FIG. 4(a), (b) is an explanatory view of a reforming layer forming step in the wafer processing method of the present invention; and FIGS. 5(a) to (c) are explanatory views showing wafer support in the wafer processing method of the present invention; Fig. 6 (a) and (b) are explanatory views showing a second embodiment of the wafer supporting step in the wafer processing method of the present invention; Fig. 7 (a), (b) In the drawings, a second embodiment of the wafer supporting step in the method of processing a wafer of the present invention is shown; 8(a) and 8(b) are explanatory views showing a second embodiment of a wafer supporting process in the method of processing a wafer of the present invention; and Fig. 9 is a view showing a method of processing a wafer according to the present invention. FIG. 10(a) to FIG. 10(c) are explanatory views of the functional layer cutting step in the wafer processing method of the present invention; FIG. 11 is for implementation. A perspective view of the element separating device in the element separating step in the wafer processing method of the present invention; and FIGS. 12(a) to (c) are explanatory views of the element separating step in the wafer processing method of the present invention.
以下，就本發明的晶圓之加工方法，參照附加之圖式，作更詳細之說明。 Hereinafter, the method of processing the wafer of the present invention will be described in more detail with reference to the accompanying drawings.
圖1之(a)以及(b)中所示為，可藉由本發明的晶圓之加工方法被分割成一個個的元件的半導體晶圓之立體圖以及主要部位放大截面圖。圖1之(a)以及(b)中所示之半導體晶圓2，是在厚度140μm之矽等基板20的表面20a形成有將絕緣膜與形成電路之功能膜積層而成的功能層21，且在該功能層21上以形成格子狀的多數條分割預定線22所劃分的多個區域中形成有IC、LSI等元件23。再者，在圖示之實施型態中，形成功能層21的絕緣膜，是由SiO2膜或以SiOF、BSG(SiOB)等無機物類的膜以及聚醯亞胺類、聚對二甲苯類等之聚合物膜的有機物類膜所形成的低介電常數絕緣體 被覆膜(Low-k膜)所製成，並將厚度設定成10μm。像這樣所構成的功能層21，是在表面形成含有SiO2、SiN等之鈍化膜。 1(a) and 1(b) are a perspective view and a cross-sectional view of a main portion of a semiconductor wafer which can be divided into individual elements by the wafer processing method of the present invention. The semiconductor wafer 2 shown in (a) and (b) of FIG. 1 is formed with a functional layer 21 formed by laminating an insulating film and a functional film forming a circuit on the surface 20a of the substrate 20 having a thickness of 140 μm. On the functional layer 21, an element 23 such as an IC or an LSI is formed in a plurality of regions divided by a plurality of predetermined dividing lines 22 which are formed in a lattice shape. Further, in the embodiment shown in the figure, the insulating film forming the functional layer 21 is made of a SiO 2 film or a film of an inorganic substance such as SiOF or BSG (SiOB), and a polyblyimide or a parylene. A low dielectric constant insulator coating film (Low-k film) formed of an organic film of a polymer film was used, and the thickness was set to 10 μm. The functional layer 21 configured as described above is formed with a passivation film containing SiO 2 , SiN or the like on the surface.
針對將上述半導體晶圓2沿分割預定線分割的晶圓之加工方法作說明。 A method of processing a wafer in which the semiconductor wafer 2 is divided along a predetermined dividing line will be described.
首先，在構成半導體晶圓2之基板20上所積層的功能層21表面21a上，為了保護元件23而如圖2所示地黏貼保護構件3(保護構件黏貼步驟)。再者，保護構件3可以使用聚乙烯薄膜等樹脂片及玻璃基板等具剛性之壓墊(pressure pad)。 First, on the surface 21a of the functional layer 21 laminated on the substrate 20 constituting the semiconductor wafer 2, the protective member 3 is adhered as shown in FIG. 2 for protecting the element 23 (protective member pasting step). Further, as the protective member 3, a resin sheet such as a polyethylene film or a pressure pad such as a glass substrate can be used.
當實施過上述保護構件黏貼步驟後，可實施改質層形成步驟，將半導體晶圓2之保護構件3側保持於夾頭台，從基板20背面側在與分割預定線22相對應之區域中將對基板20具有穿透性波長的雷射光線的聚光點定位於內部以進行照射，並在基板20內部沿分割預定線22而形成成為分割起點的改質層。該改質層形成步驟是使用圖3所示之雷射加工裝置4來實施。圖3所示之雷射加工裝置4具備了保持工件之夾頭台41、對保持於該夾頭台41上之工件照射雷射光線的雷射光線照射機構42，及對保持於夾頭台41上之工件進行拍攝之攝像機構43。夾頭台41是構成為可吸引保持工件，並形成可藉由圖未示出的加工傳送機構使其可在圖3中以箭形符號X所示之加工傳送方向上移動，同時可藉由圖未示出之分度傳送機構使其可在圖3中以箭形符號Y所示之分度傳送方向上移動。 After the protective member pasting step is performed, the reforming layer forming step can be performed to hold the protective member 3 side of the semiconductor wafer 2 on the chuck stage, from the back side of the substrate 20 in the region corresponding to the dividing line 22 The light-converging point of the laser beam having the penetrating wavelength of the substrate 20 is positioned inside to be irradiated, and a modified layer serving as a starting point of the division is formed along the dividing line 22 inside the substrate 20. This reforming layer forming step is carried out using the laser processing apparatus 4 shown in FIG. The laser processing apparatus 4 shown in Fig. 3 is provided with a chuck table 41 for holding a workpiece, a laser beam irradiation mechanism 42 for irradiating a laser beam to a workpiece held on the chuck table 41, and a pair of holders for holding the laser beam. The image pickup mechanism 43 that photographs the workpiece on the 41. The chuck table 41 is configured to attract and hold the workpiece, and is formed to be movable in the processing conveyance direction indicated by the arrow symbol X in FIG. 3 by a processing conveyance mechanism not shown, and The indexing mechanism, not shown, is movable in the indexing direction indicated by the arrow symbol Y in FIG.
上述雷射光照射機構42含有實質上為水平配置 之圓筒狀套管421。套管421內配設有未圖示出之具備脈衝雷射光線振盪器和重複頻率設定機構之脈衝雷射光線振盪機構。上述套管421的前端部裝設有聚光器422，用於匯聚脈衝雷射光線振盪機構所振盪產生之脈衝雷射光線。此外，雷射光照射機構42具備聚光點位置調整機構(圖未示)，用於調整以聚光器422所聚光之脈衝雷射光線的聚光點位置。 The above-described laser light irradiation mechanism 42 includes a substantially horizontal arrangement A cylindrical sleeve 421. A pulsed laser ray oscillating mechanism having a pulsed laser ray oscillator and a repetition frequency setting mechanism, not shown, is disposed in the sleeve 421. The front end of the sleeve 421 is provided with a concentrator 422 for collecting pulsed laser light generated by the oscillation of the pulsed laser oscillating mechanism. Further, the laser light irradiation unit 42 is provided with a light collecting point position adjusting mechanism (not shown) for adjusting the position of the light collecting point of the pulsed laser light collected by the concentrator 422.
裝設在構成上述雷射光照射機構42之套管421的前端部的攝像機構43，在圖示之實施形態中除了透過可見光拍攝之一般攝像元件(CCD)之外，還可由用於對工件照射紅外線之紅外線照明機構、捕捉由該紅外線照明機構所照射之紅外線的光學系統，及可輸出與該光學系統所捕捉之紅外線相對應的電氣訊號的攝像元件(紅外線CCD)等所構成，並將所拍攝之影像訊號傳送到圖未示出的控制機構。 The imaging unit 43 installed in the distal end portion of the sleeve 421 constituting the laser light irradiation unit 42 is also used to illuminate the workpiece in addition to a general imaging element (CCD) that is captured by visible light in the illustrated embodiment. An infrared infrared illuminating mechanism, an optical system that captures infrared rays irradiated by the infrared illuminating mechanism, and an imaging element (infrared CCD) that can output an electrical signal corresponding to the infrared ray captured by the optical system, and the like The captured image signal is transmitted to a control mechanism not shown.
使用上述雷射加工裝置4來實施改質層形成步驟時，是如圖3所示地實施上述保護構件黏貼步驟並將已黏貼在半導體晶圓2上之保護構件3側載置於夾頭台41上。然後，藉由作動圖未示出之吸引機構，透過保護構件3將半導體晶圓2保持於夾頭台41上(晶圓保持步驟)。因此，被保持在夾頭台41之半導體晶圓2會變成基板20的背面20b在上側。如此進行，以將已吸引保持半導體晶圓2之夾頭台41，透過圖未示出之加工傳送機構定位到攝像機構43的正下方。 When the reforming layer forming step is performed using the above-described laser processing apparatus 4, the protective member pasting step is performed as shown in FIG. 3, and the protective member 3 side adhered to the semiconductor wafer 2 is placed on the chuck stage. 41. Then, the semiconductor wafer 2 is held by the protective member 3 on the chuck stage 41 by a suction mechanism not shown in the drawing (wafer holding step). Therefore, the semiconductor wafer 2 held by the chuck stage 41 becomes the upper side of the back surface 20b of the substrate 20. In this manner, the chuck stage 41 that has sucked and held the semiconductor wafer 2 is positioned directly below the image pickup mechanism 43 through a processing transfer mechanism not shown.
當將夾頭台41定位至攝像機構43的正下方時，可藉由攝像機構43以及圖未示出之控制機構實行校準作業，以檢測半導體晶圓2應當進行雷射加工的加工區域。亦即， 攝像機構43和圖未示出之控制機構將實行型樣匹配(pattern matching)等之影像處理，以進行在構成半導體晶圓2之功能層21上的預定方向上所形成的分割預定線22，與沿分割預定線22照射雷射光線之雷射光線照射機構42的聚光器422的位置對齊作業，藉以完成雷射光線照射位置之校準(alignment)。此外，針對在構成半導體晶圓2的功能層21上所形成之在與相對於上述預定方向為直交的方向上延伸的分割預定線22，也是同樣地完成雷射光線照射位置之校準。此時，雖然構成形成有分割預定線22之半導體晶圓2的功能層21位於下側，但因攝像機構43如上述地具備了由紅外線照明機構與捕捉紅外線之光學系統以及可輸出對應紅外線之電氣訊號的攝像元件(紅外線CCD)等所構成之攝像機構，故可從構成晶圓之基板20的背面20b穿透過去以拍攝分割預定線22。 When the chuck table 41 is positioned directly below the image pickup mechanism 43, the calibration operation can be performed by the image pickup mechanism 43 and a control mechanism not shown to detect the processing region where the semiconductor wafer 2 should be subjected to laser processing. that is, The image pickup unit 43 and the control unit (not shown) perform image processing such as pattern matching to perform the division planned line 22 formed in a predetermined direction on the functional layer 21 constituting the semiconductor wafer 2, The alignment of the concentrator 422 of the laser beam illuminating mechanism 42 that irradiates the laser beam along the dividing line 22 is performed to complete the alignment of the laser beam irradiation position. Further, the calibration of the laser beam irradiation position is performed in the same manner for the division planned line 22 formed on the functional layer 21 constituting the semiconductor wafer 2 in a direction orthogonal to the predetermined direction. At this time, although the functional layer 21 constituting the semiconductor wafer 2 on which the planned dividing line 22 is formed is located on the lower side, the imaging unit 43 includes the infrared illuminating mechanism and the optical system for capturing infrared rays, and the corresponding infrared ray can be output as described above. Since the imaging means including the imaging element (infrared CCD) of the electric signal is penetrated from the back surface 20b of the substrate 20 constituting the wafer, the division planned line 22 is imaged.
當如以上地進行而對保持在夾頭台41上之在構成光元件晶圓2的功能層21上所形成的分割預定線22作檢測，並進行過雷射光線照射位置的校準後，如圖4(a)所示地將夾頭台41移動到照射雷射光線之雷射光線照射機構42的聚光器422所在之雷射光線照射區域，並將預定之分割預定線22的一端(圖4(a)中為左端)定位到雷射光線照射機構42之聚光器422的正下方。接著，將從聚光器422所照射出之脈衝雷射光LB的聚光點P定位於構成半導體晶圓2之基板20的厚度方向中間部位。並且，一邊從聚光器422照射對基板20具穿透性波長之脈衝雷射光線一邊使夾頭台41以預定 的傳送速度往圖4(a)中的箭形符號X1所示的方向移動。然後，如圖4(b)所示地，當雷射光線照射機構42之聚光器422的照射位置到達分割預定線22的另一端之位置時，即停止脈衝雷射光線的照射同時停止夾頭台41的移動。其結果為，可在構成半導體晶圓2之基板20內部，沿著分割預定線22形成改質層210(改質層形成步驟)。 When the division planned line 22 formed on the functional layer 21 constituting the optical element wafer 2 held on the chuck stage 41 is detected as described above, and the position of the laser beam irradiation position is calibrated, As shown in Fig. 4 (a), the chuck stage 41 is moved to a laser beam irradiation area where the concentrator 422 of the laser beam irradiation mechanism 42 for irradiating the laser beam is placed, and one end of the predetermined division line 22 is predetermined ( The left end in Fig. 4(a) is positioned directly below the concentrator 422 of the laser beam illumination mechanism 42. Next, the condensed spot P of the pulsed laser light LB irradiated from the concentrator 422 is positioned at the intermediate portion in the thickness direction of the substrate 20 constituting the semiconductor wafer 2. Further, the chuck stage 41 is predetermined while irradiating the laser light having a penetrating wavelength to the substrate 20 from the concentrator 422. The conveying speed is shifted in the direction indicated by the arrow symbol X1 in Fig. 4(a). Then, as shown in FIG. 4(b), when the irradiation position of the concentrator 422 of the laser beam irradiation mechanism 42 reaches the position of the other end of the division planned line 22, the irradiation of the pulsed laser light is stopped while the clamp is stopped. The movement of the headstock 41. As a result, the reforming layer 210 can be formed along the planned dividing line 22 inside the substrate 20 constituting the semiconductor wafer 2 (the reforming layer forming step).
上述改質層形成步驟之加工條件，可舉例設定如下。 The processing conditions of the above-described reforming layer forming step can be exemplified as follows.
光源：LD激發Q切換Nd：YVO4脈衝雷射 Light source: LD excitation Q switching Nd: YVO4 pulse laser
波長：1064nm Wavelength: 1064nm
重複頻率：100kHz Repeat frequency: 100kHz
平均輸出：0.5W Average output: 0.5W
聚光點點徑：φ1μm Spot point diameter: φ1μm
加工傳送速度：200mm/秒 Processing transfer speed: 200mm / sec
對半導體晶圓2上形成之所有分割預定線22的對應區域都實施上述改質層形成步驟。 The reforming layer forming step is performed on the corresponding regions of all the dividing lines 22 formed on the semiconductor wafer 2.
接下來，實施晶圓支撐步驟，在構成已實施過改質層形成步驟之半導體晶圓2的基板20的背面20b上黏貼切割膠帶，並以環狀框架支撐切割膠帶的外周部，同時將保護構件3剝離。 Next, a wafer supporting step is performed to adhere the dicing tape to the back surface 20b of the substrate 20 constituting the semiconductor wafer 2 on which the modified layer forming step has been performed, and the outer peripheral portion of the dicing tape is supported by the annular frame while protecting The member 3 is peeled off.
針對晶圓支撐步驟之第1實施形態，參照圖5來加以說明。晶圓支撐步驟之圖5所示的第1實施形態，是在已實施過上述改質層形成步驟之夾頭台41上實施。亦即，是如圖5(a)與(b)所示地，將在設有可容納晶圓之大小的開口部51 的環狀框架5的背面使外周部裝設成可覆蓋住開口部51的切割膠帶50的表面50a(設有黏著層而形成黏著面)，黏貼到構成已實施過改質層形成步驟之被保持在夾頭台41上的半導體晶圓2之基板20的背面20b。並且，如圖5(c)所示地，將黏貼在構成半導體晶圓2之功能層21的表面的保護構件3剝離。 The first embodiment of the wafer supporting step will be described with reference to Fig. 5 . The first embodiment shown in Fig. 5 of the wafer supporting step is carried out on the chuck stage 41 on which the reforming layer forming step has been carried out. That is, as shown in FIGS. 5(a) and (b), the opening portion 51 having a size capable of accommodating the wafer is provided. The back surface of the annular frame 5 is provided with an outer peripheral portion that is provided to cover the surface 50a of the dicing tape 50 of the opening portion 51 (with an adhesive layer to form an adhesive surface), and is adhered to the constituting step in which the modified layer is formed. The back surface 20b of the substrate 20 of the semiconductor wafer 2 held on the chuck stage 41. Then, as shown in FIG. 5(c), the protective member 3 adhered to the surface of the functional layer 21 constituting the semiconductor wafer 2 is peeled off.
接下來，針對晶圓支撐步驟之第2實施形態，參照圖6到圖8來說明。晶圓支撐步驟之第2實施形態，首先是使用第1吸引保持墊6吸引保持構成圖6(a)與(b)所示之半導體晶圓2之基板20的背面20b，而該半導體晶圓2是已實施過改質層形成步驟而被保持在夾頭台41上者。圖6(a)與(b)所示之第1吸引保持墊6是由圓盤狀之基台61與墊塊62所構成。構成第1吸引保持墊6之基台61，設有於下方開放形成之圓形凹部611。在該凹部611中嵌合有將多氣孔之陶瓷構件形成圓盤狀的墊塊62。如此形成以使被嵌合在基台61的凹部611中的墊塊62的下表面，作為吸引保持工件的吸附面而發揮功能。構成第1吸引保持墊6之基台61上所形成的圓形凹部611，被連接到圖未示出之吸引機構。因此，當作動圖未示出之吸引機構時，就會透過基台61之凹部611使負壓作用至墊塊62的下表面(吸附面)，而可以將工件吸引保持於該墊塊62的下表面(吸附面)。亦即，如圖6(a)所示，藉由讓第1吸引保持墊6之墊塊62的下表面(吸附面)接觸到構成已實施過改質層形成步驟之被保持於夾頭台41上之半導體晶圓2的基板20背面20b(上表面)，並作動圖未示出之吸引機構， 就可以將構成半導體晶圓2之基板20背面20b整面吸引保持在墊塊62的下表面(吸附面)。像這樣將構成半導體晶圓2之基板20吸引保持在墊塊62的下表面(吸附面)之第1吸引保持墊6，是如圖6(b)所示地，將構成半導體晶圓2之基板20以吸引保持的狀態從夾頭台41的上表面往上方移動後，將其從夾頭台41搬出(晶圓搬出步驟)。 Next, a second embodiment of the wafer supporting step will be described with reference to FIGS. 6 to 8. In the second embodiment of the wafer supporting step, first, the back surface 20b of the substrate 20 constituting the semiconductor wafer 2 shown in FIGS. 6(a) and 6(b) is sucked and held by the first suction holding pad 6, and the semiconductor wafer is used. 2 is the one that has been subjected to the reforming layer forming step and is held on the chuck table 41. The first suction holding pad 6 shown in Figs. 6(a) and 6(b) is composed of a disk-shaped base 61 and a spacer 62. The base 61 constituting the first suction holding mat 6 is provided with a circular recess 611 which is opened at the lower side. A spacer 62 in which a ceramic member having a plurality of pores is formed into a disk shape is fitted into the recessed portion 611. The lower surface of the spacer 62 that is fitted into the concave portion 611 of the base 61 functions as a suction surface for sucking and holding the workpiece. The circular recessed portion 611 formed on the base 61 constituting the first suction holding mat 6 is connected to a suction mechanism not shown. Therefore, when the suction mechanism is not shown, the negative pressure is applied to the lower surface (adsorption surface) of the spacer 62 through the concave portion 611 of the base 61, and the workpiece can be attracted and held by the spacer 62. Lower surface (adsorption surface). That is, as shown in Fig. 6(a), the lower surface (adsorption surface) of the spacer 62 of the first suction holding mat 6 is brought into contact with the chuck forming stage in which the modified layer forming step has been carried out. 41 on the back surface 20b (upper surface) of the substrate 20 of the semiconductor wafer 2, and actuating a suction mechanism not shown, The entire surface 20b of the substrate 20 constituting the semiconductor wafer 2 can be attracted and held on the lower surface (adsorption surface) of the spacer 62. The substrate 20 constituting the semiconductor wafer 2 is sucked and held by the first suction holding pad 6 on the lower surface (adsorption surface) of the spacer 62, and the semiconductor wafer 2 is formed as shown in FIG. 6(b). The substrate 20 is moved upward from the upper surface of the chuck stage 41 in a state of being sucked and held, and then carried out from the chuck stage 41 (wafer carry-out step).
當實施過上述晶圓搬出步驟後，可實施晶圓轉移步驟，在將被吸引保持於第1吸引保持墊6之構成半導體晶圓2的功能層21表面所黏貼之保護構件3朝向上側的狀態下，使黏貼於構成半導體晶圓2之功能層21表面的保護構件3側吸引保持於第2吸引保持墊上，以使第1吸引保持墊6從半導體晶圓2脫離。實施這個晶圓轉移步驟時，是使用圖7(a)與(b)所示之第2吸引保持墊7實施。圖7(a)與(b)所示之第2吸引保持墊7是由圓盤狀的基台71與墊塊72所構成。構成第2吸引保持墊7之基台71，設有於下方開放形成之圓形凹部711。在該凹部711中嵌合有將多孔的陶瓷構件形成圓盤狀的墊塊72。如此形成以使被嵌合在基台71的凹部711中的墊塊72的下表面，作為吸引保持工件的吸附面而發揮功能。構成第2吸引保持墊7之基台71上所形成之圓形凹部711，被連接到圖未示出之吸引機構。因此，當作動圖未示出之吸引機構時，就會透過基台71之凹部711使負壓作用至墊塊72的下表面(吸附面)，而可以將工件吸引保持於該墊塊72的下表面(吸附面)。要使用上述第2吸引保持墊7來實施晶圓轉移步驟時，是如圖7之(a)所示地，將已實施過晶圓搬出步驟之第1 吸引保持墊6上下反轉，把吸引保持著構成半導體晶圓2的功能層21表面所黏貼之保護構件3朝向上側。接著，將第1吸引保持墊6定位於第2吸引保持墊7下方並使其上升，使第2吸引保持墊7之墊塊72的下表面(吸附面)接觸黏貼在半導體晶圓2表面之保護膠帶3的上表面後，便可將第1吸引保持墊6對晶圓半導體2的吸引保持解除。並且，藉由作動圖未示出之吸引機構，就可以將黏貼在構成半導體晶圓2之功能層21表面的保護構件3的整面都吸引保持在第2吸引保持墊7的墊塊72的下表面(吸附面)。然後，如圖7(b)所示地使第1吸引保持墊6下降以使其從半導體晶圓2離開。像這樣將黏貼在半導體晶圓2表面的保護膠帶3吸引保持在墊塊72的下表面(吸附面)之第2吸引保持墊7，會以吸引保持著半導體晶圓2的狀態搬送到下一個步驟。 After the above-described wafer unloading step, the wafer transfer step can be performed, and the protective member 3 adhered to the surface of the functional layer 21 constituting the semiconductor wafer 2 that is attracted and held by the first suction holding pad 6 is directed upward. Then, the side of the protective member 3 adhered to the surface of the functional layer 21 constituting the semiconductor wafer 2 is sucked and held by the second suction holding pad, so that the first suction holding pad 6 is detached from the semiconductor wafer 2. When this wafer transfer step is carried out, it is carried out using the second suction holding mat 7 shown in Figs. 7(a) and (b). The second suction holding pad 7 shown in Figs. 7(a) and 7(b) is composed of a disk-shaped base 71 and a spacer 72. The base 71 constituting the second suction holding pad 7 is provided with a circular recess 711 which is opened at the lower side. A spacer 72 in which a porous ceramic member is formed into a disk shape is fitted into the concave portion 711. The lower surface of the spacer 72 that is fitted into the concave portion 711 of the base 71 functions as the suction surface for sucking and holding the workpiece. The circular recess 711 formed on the base 71 constituting the second suction holding pad 7 is connected to a suction mechanism not shown. Therefore, when the suction mechanism is not shown, the negative pressure is applied to the lower surface (adsorption surface) of the spacer 72 through the concave portion 711 of the base 71, and the workpiece can be attracted and held by the spacer 72. Lower surface (adsorption surface). When the wafer transfer step is performed using the second suction holding pad 7, the first wafer carrying out step is performed as shown in FIG. 7(a). The suction holding pad 6 is vertically inverted, and the protective member 3 adhered to the surface of the functional layer 21 constituting the semiconductor wafer 2 is sucked and held toward the upper side. Then, the first suction holding mat 6 is positioned below the second suction holding mat 7 and raised, and the lower surface (adsorption surface) of the spacer 72 of the second suction holding mat 7 is brought into contact with the surface of the semiconductor wafer 2 After the upper surface of the protective tape 3 is protected, the suction of the first semiconductor wafer 2 by the first suction holding mat 6 can be released. Further, by the attraction mechanism not shown in the drawing, the entire surface of the protective member 3 adhered to the surface of the functional layer 21 constituting the semiconductor wafer 2 can be sucked and held by the spacer 72 of the second suction holding pad 7. Lower surface (adsorption surface). Then, as shown in FIG. 7(b), the first suction holding pad 6 is lowered to be separated from the semiconductor wafer 2. When the protective tape 3 adhered to the surface of the semiconductor wafer 2 is sucked and held by the second suction holding pad 7 held on the lower surface (adsorption surface) of the spacer 72, the semiconductor wafer 2 is sucked and held to the next state. step.
接著，在構成以保護構件3側吸引保持於第2吸引保持墊7上的半導體晶圓2之基板20的背面20b，黏貼裝設在環狀框架的切割膠帶。再者，裝設在環狀框架上之切割膠帶，是使用裝設在上述圖5所示之環狀框架5上的切割膠帶50。 Next, the dicing tape attached to the annular frame is adhered to the back surface 20b of the substrate 20 which is configured to suck and hold the semiconductor wafer 2 on the second suction holding mat 7 on the side of the protective member 3. Further, the dicing tape attached to the annular frame is a dicing tape 50 attached to the annular frame 5 shown in Fig. 5 described above.
亦即，如圖8(a)所示，在膠帶黏貼裝置500的台座501上，載置了裝設在環狀框架5上之切割膠帶50。像這樣在將切割膠帶50載置在台座501上的狀態下，如圖8(a)所示，將構成以保護膠帶3側吸引保持於第2吸引保持墊7上的半導體晶圓2之基板20背面20b壓抵在切割膠帶50的正面(上表面)的黏著面上。這樣做而將構成以保護膠帶3側吸引保持於第2 吸引保持墊7上之半導體晶圓2的基板20的背面20b黏貼到位於半導體晶圓2的背面2b之切割膠帶50的正面(上表面)的黏著面上時，可如圖8(b)所示，將黏貼在構成半導體晶圓2之功能層21的表面之保護構件3剝離。 That is, as shown in FIG. 8(a), the dicing tape 50 attached to the annular frame 5 is placed on the pedestal 501 of the tape applying device 500. In the state where the dicing tape 50 is placed on the pedestal 501, as shown in FIG. 8(a), the substrate constituting the semiconductor wafer 2 sucked and held by the protective tape 3 side on the second suction holding pad 7 is formed. The back surface 20b is pressed against the adhesive surface of the front surface (upper surface) of the dicing tape 50. In doing so, the structure is sucked and held on the side of the protective tape 3 to be held in the second When the back surface 20b of the substrate 20 that attracts the semiconductor wafer 2 on the holding pad 7 is adhered to the adhesive surface of the front surface (upper surface) of the dicing tape 50 on the back surface 2b of the semiconductor wafer 2, it can be as shown in Fig. 8(b). The protective member 3 adhered to the surface of the functional layer 21 constituting the semiconductor wafer 2 is peeled off.
當如上述地實施晶圓支撐步驟後，可實施功能層切斷步驟，沿著在構成半導體晶圓2之功能層21上所形成之分割預定線照射雷射光線，將功能層21作燒蝕加工以切斷。此功能層切斷步驟是使用圖9所示之雷射加工裝置40來實施。再者，圖9所示之雷射加工裝置40因為與上述圖3所示之雷射加工裝置4實質上是一樣的構成，故對相同構件會附加相同符號而省略說明。 After the wafer supporting step is performed as described above, a functional layer cutting step may be performed to irradiate the laser beam along the dividing line formed on the functional layer 21 constituting the semiconductor wafer 2, and the functional layer 21 is ablated. Processing to cut off. This functional layer cutting step is carried out using the laser processing apparatus 40 shown in FIG. The laser processing apparatus 40 shown in FIG. 9 has substantially the same configuration as the laser processing apparatus 4 shown in FIG. 3, and the same reference numerals will be given to the same members, and description thereof will be omitted.
要使用圖9所示之雷射加工裝置40來實施功能層切斷步驟時，首先，是實施上述晶圓支撐步驟並以黏貼在構成半導體晶圓2之基板20的背面20b上的切割膠帶50側載置在圖9所示之雷射加工裝置40的夾頭台41上。然後，藉由作動圖未示出之吸引機構，透過切割膠帶50將半導體晶圓2保持在夾頭台41上(晶圓保持步驟)。因此，被保持在夾頭台41上之半導體晶圓2，變成讓積層於基板20的功能層21的表面21a位於上側。再者，圖9中雖然省略裝設有切割膠帶50之環狀框架5，但環狀框架5會受到配置於夾頭台41上之適當的框架保持機構保持。這樣做，則吸引保持半導體晶圓2之夾頭台41可透過圖未示出之加工傳送機構被定位到攝像機構43的正下方。 When the functional layer cutting step is performed using the laser processing apparatus 40 shown in FIG. 9, first, the wafer supporting step is performed and the dicing tape 50 is adhered to the back surface 20b of the substrate 20 constituting the semiconductor wafer 2. The side is placed on the chuck table 41 of the laser processing apparatus 40 shown in FIG. Then, the semiconductor wafer 2 is held on the chuck stage 41 by the dicing tape 50 by a suction mechanism not shown in the drawing (wafer holding step). Therefore, the semiconductor wafer 2 held on the chuck stage 41 is placed on the upper side of the surface 21a of the functional layer 21 laminated on the substrate 20. Further, although the annular frame 5 on which the dicing tape 50 is attached is omitted in FIG. 9, the annular frame 5 is held by an appropriate frame holding mechanism disposed on the ram 41. In doing so, the chuck stage 41 that attracts and holds the semiconductor wafer 2 can be positioned directly below the image pickup mechanism 43 through a processing transfer mechanism not shown.
當將夾頭台41定位到攝像機構43的正下方時，可 實行校準作業，藉由攝像機構43以及圖未示出之控制機構檢測半導體晶圓2之應當進行雷射加工的加工區域。亦即，攝像機構43以及圖未示出之控制機構，可實行型樣匹配等影像處理，以進行形成在構成半導體晶圓2之基板20上所積層之功能層21的表面21a上的分割預定線22，與沿該分割預定線22照射雷射光線的雷射光照射機構42之聚光器422的位置對齊作業，而完成雷射光線照射位置之校準(校準步驟)。此外，對於半導體晶圓2上之與上述預定方向直交的方向上所形成的分割預定線22，也同樣地完成雷射光線照射位置之校準。 When the chuck table 41 is positioned directly below the camera mechanism 43, The calibration operation is performed, and the processing area of the semiconductor wafer 2 on which the laser processing should be performed is detected by the imaging mechanism 43 and a control mechanism not shown. In other words, the image pickup unit 43 and the control unit (not shown) can perform image processing such as pattern matching to perform division planning on the surface 21a of the functional layer 21 formed on the substrate 20 constituting the semiconductor wafer 2. The line 22 is aligned with the position of the concentrator 422 of the laser light irradiation mechanism 42 that irradiates the laser beam along the division planned line 22, and the calibration of the laser beam irradiation position is completed (calibration step). Further, the alignment of the laser beam irradiation position is similarly performed on the division planned line 22 formed in the direction orthogonal to the predetermined direction on the semiconductor wafer 2.
當已實施過上述校準步驟後，如圖10所示，將夾頭台41移動到照射雷射光線之雷射光線照射機構42的聚光器422所在的雷射光線照射區域，將預定之分割預定線22定位於聚光器422的正下方。此時，如圖10(a)所示，是將半導體晶圓2定位成分割預定線22之一端(圖10(a)中為左端)位於聚光器422的正下方。並且，將從聚光器422照射出來的脈衝雷射光線LB的聚光點P定位在積層於基板20上之功能層21的表面21a附近。接下來，一邊從雷射光照射機構42的聚光器422照射對基板20以及功能層21具有吸收性波長之脈衝雷射光線，一邊使夾頭台41以預定的加工傳送速度於圖10(a)中往箭形符號X1所示之方向移動。並且，如圖10(b)所示，當分割預定線22的另一端(圖10(b)中為右端)到達聚光器422的正下方位置時，則停止脈衝雷射光線的照射，同時停止夾頭台41的移動(功能層切斷步驟)。 After the above-described calibration step has been carried out, as shown in FIG. 10, the chuck stage 41 is moved to a laser beam irradiation area where the concentrator 422 of the laser beam irradiation mechanism 42 that irradiates the laser beam is irradiated, and the predetermined division is performed. The predetermined line 22 is positioned directly below the concentrator 422. At this time, as shown in FIG. 10(a), the semiconductor wafer 2 is positioned at one end of the division planned line 22 (the left end in FIG. 10(a)) directly under the concentrator 422. Further, the condensed spot P of the pulsed laser beam LB irradiated from the concentrator 422 is positioned in the vicinity of the surface 21a of the functional layer 21 laminated on the substrate 20. Next, while irradiating the laser beam ray having an absorptive wavelength to the substrate 20 and the functional layer 21 from the concentrator 422 of the laser beam irradiation unit 42, the chuck stage 41 is at a predetermined processing conveyance speed in FIG. 10 (a). ) moves in the direction indicated by the arrow symbol X1. Further, as shown in FIG. 10(b), when the other end of the division planned line 22 (the right end in FIG. 10(b)) reaches the position directly below the concentrator 422, the irradiation of the pulsed laser light is stopped, and at the same time, The movement of the chuck table 41 is stopped (functional layer cutting step).
接著，將夾頭台41沿垂直於紙面的方向(分度傳送方向)僅移動分割預定線22的間隔。並且，一邊從雷射光線照射機構42的聚光器422照射脈衝雷射光線一邊使夾頭台41以預定的加工傳送速度於圖10(b)中往箭形符號X2所示之方向移動，當到達圖10(a)所示之位置時，則停止脈衝雷射光線之照射，同時停止夾頭台41的移動。 Next, the chuck table 41 is moved only in the direction perpendicular to the paper surface (index transfer direction) by the interval of the division planned line 22. Further, while the pulsed laser beam is irradiated from the concentrator 422 of the laser beam irradiation unit 42, the chuck stage 41 is moved in the direction indicated by the arrow symbol X2 at a predetermined processing conveyance speed in FIG. 10(b). When the position shown in Fig. 10 (a) is reached, the irradiation of the pulsed laser light is stopped, and the movement of the chuck table 41 is stopped.
藉由實施上述功能層切斷步驟，會如圖10(c)所示地在構成半導體晶圓2之功能層21上形成雷射加工溝220，而可將功能層21沿著分割預定線22切斷。並且，沿著形成於半導體晶圓2上的所有分割預定線22都實施上述功能層切斷步驟。 By performing the above-described functional layer cutting step, the laser processing groove 220 is formed on the functional layer 21 constituting the semiconductor wafer 2 as shown in FIG. 10(c), and the functional layer 21 can be along the dividing line 22 Cut off. Further, the above-described functional layer cutting step is performed along all the division planned lines 22 formed on the semiconductor wafer 2.
再者，上述功能層切斷步驟是以例如以下的加工條件進行。 Further, the functional layer cutting step is performed under the following processing conditions, for example.
雷射光線之波長：355nm Laser light wavelength: 355nm
重複頻率：200kHz Repeat frequency: 200kHz
輸出：2W Output: 2W
聚光點點徑：φ6μm Spot point diameter: φ6μm
加工傳送速度：500mm/秒 Processing transfer speed: 500mm / sec
在上述功能層切斷步驟中，在功能層21表面即使形成含SiO2、SiN等的鈍化膜，當在雷射加工步驟中沿著分割預定線22對功能層21照射雷射光線時，由於能量可散逸到形成於基板20內部之改質層210中，故所謂的過切問題得以解決。 In the above-described functional layer cutting step, even if a passivation film containing SiO 2 , SiN or the like is formed on the surface of the functional layer 21, when the functional layer 21 is irradiated with laser light along the dividing line 22 in the laser processing step, The energy can be dissipated into the reforming layer 210 formed inside the substrate 20, so that the so-called overcutting problem can be solved.
此外，在功能層切斷步驟中，由於不必如以往地形成 寬度超過切削刀的寬度之雷射加工溝，故可以將分割預定線22的寬度作窄，而可以增加可在晶圓內形成之元件的數量。 Further, in the functional layer cutting step, since it is not necessary to form as in the past The laser processing groove having a width exceeding the width of the cutter allows the width of the dividing line 22 to be narrowed, and the number of components that can be formed in the wafer can be increased.
當實施過上述功能層切斷步驟後，可實施元件分離步驟，將貼有半導體晶圓2之切割膠帶50擴張以沿著分割預定線22將晶圓分離成一個個的元件。此元件分離步驟是使用圖11所示之元件分離裝置8而實施。圖11所示之元件分離裝置8具備可保持上述環狀框架5之框架保持機構81、將被保持在該框架保持機構81上且裝設於環狀框架5上之切割膠帶50擴張之膠帶擴張機構82，以及拾取式夾頭83。框架保持機構81是由環狀的框架保持構件811，和配置在該框架保持構件811的外周緣之作為固定機構的複數個夾具812所構成。框架保持構件811之上表面形成有載置環狀框架5的載置面811a，以將環狀框架5載置於該載置面811a上。並且，載置於載置面811a上之環狀框架5是透過夾具812而被固定於框架保持構件811上。如此所構成之框架保持機構81，是以膠帶擴張機構82支撐成可沿上下方向作進退。 After the functional layer cutting step is performed, the element separating step may be performed to expand the dicing tape 50 to which the semiconductor wafer 2 is attached to separate the wafer into individual elements along the dividing line 22 . This element separation step is carried out using the element separating device 8 shown in FIG. The component separating device 8 shown in Fig. 11 is provided with a frame holding mechanism 81 that can hold the annular frame 5, and a tape expansion that expands the dicing tape 50 that is held by the frame holding mechanism 81 and that is mounted on the annular frame 5. Mechanism 82, as well as pick-up collet 83. The frame holding mechanism 81 is composed of an annular frame holding member 811 and a plurality of jigs 812 which are disposed as fixing means on the outer periphery of the frame holding member 811. A mounting surface 811a on which the annular frame 5 is placed is formed on the upper surface of the frame holding member 811 to mount the annular frame 5 on the mounting surface 811a. Further, the annular frame 5 placed on the mounting surface 811a is fixed to the frame holding member 811 through the jig 812. The frame holding mechanism 81 thus constructed is supported by the tape expanding mechanism 82 so as to advance and retreat in the vertical direction.
膠帶擴張機構82具備配置在上述環狀的框架保持構件811內側之擴張滾筒821。這個擴張滾筒821具有比環狀框架5的內徑還小而比裝設在該環狀框架5之切割膠帶50上所黏貼的半導體晶圓2的外徑還大的內徑及外徑。此外，擴張滾筒821，於下端設有支撐凸緣822。圖示之實施形態中的膠帶擴張機構82具備可將上述環狀的框架保持構件811沿上下方向作進退之支撐機構823。這個支撐機構823是 由配置在上述支撐凸緣822上的複數個氣缸(air cylinder)823a所構成，並將其活塞桿(piston rod)823b連結至上述環狀的框架保持構件811的下表面。如此由複數個氣缸823a所構成之支撐機構823，使環狀的框架保持構件811可在如圖12(a)所示地載置面811a與擴張滾筒821的上端呈大致相同高度的基準位置，和如圖12(b)所示地距離擴張滾筒821的上端預定量下方的擴張位置之間，沿上下方向移動。 The tape expansion mechanism 82 includes an expansion roller 821 disposed inside the annular frame holding member 811. This expansion roller 821 has an inner diameter and an outer diameter which are smaller than the inner diameter of the annular frame 5 and larger than the outer diameter of the semiconductor wafer 2 attached to the dicing tape 50 of the annular frame 5. Further, the expansion drum 821 is provided with a support flange 822 at the lower end. The tape expansion mechanism 82 in the illustrated embodiment includes a support mechanism 823 that can advance and retract the annular frame holding member 811 in the vertical direction. This support mechanism 823 is The air cylinder 823a is disposed on the support flange 822, and a piston rod 823b is coupled to the lower surface of the annular frame holding member 811. Thus, the support mechanism 823 composed of the plurality of cylinders 823a allows the annular frame holding member 811 to have a reference position at substantially the same height as the upper end of the expansion roller 821 as shown in FIG. 12(a). As shown in Fig. 12(b), it is moved in the vertical direction between the expansion position below the predetermined amount of the upper end of the expansion drum 821.
就使用如以上所構成之元件分離裝置8而實施的元件分離步驟，參照圖12進行說明。亦即，將裝設有貼著半導體晶圓2的切割膠帶50的環狀框架5，如圖12(a)所示地載置於構成框架保持機構81之框架保持構件811的載放面811a上，並以夾具812固定在框架保持構件811上(框架保持步驟)。此時，框架保持構件811被定位在圖12(a)所示之基準位置上。接著，作動作為構成膠帶擴張機構82之支撐機構823的複數個氣缸823a，以使環狀的框架保持構件811下降到圖12(b)所示之擴張位置。於是，因為被固定在框架保持構件811的載置面911a上的環狀框架5也會下降，故可如圖12(b)所示地使裝設在環狀框架5之切割膠帶50接觸擴張滾筒821的上端緣而被擴張(膠帶擴張步驟)。其結果為，由於拉張力會放射狀地作用於黏貼在切割膠帶50的半導體晶圓2上，故半導體晶圓2會以基板20內部沿著分割預定線22所形成之改質層210作為分割起點而被分割成一個個的元件23，同時在元件間形成間隔S。 The element separation step performed using the element separating device 8 configured as described above will be described with reference to FIG. In other words, the annular frame 5 on which the dicing tape 50 attached to the semiconductor wafer 2 is attached is placed on the placement surface 811a of the frame holding member 811 constituting the frame holding mechanism 81 as shown in Fig. 12(a). It is fixed to the frame holding member 811 with a jig 812 (frame holding step). At this time, the frame holding member 811 is positioned at the reference position shown in Fig. 12 (a). Next, the plurality of cylinders 823a constituting the support mechanism 823 of the tape expansion mechanism 82 are operated to lower the annular frame holding member 811 to the expanded position shown in Fig. 12(b). Therefore, since the annular frame 5 fixed to the mounting surface 911a of the frame holding member 811 is also lowered, the cutting tape 50 attached to the annular frame 5 can be contacted and expanded as shown in Fig. 12(b). The upper end edge of the drum 821 is expanded (tape expansion step). As a result, since the tensile force acts radially on the semiconductor wafer 2 adhered to the dicing tape 50, the semiconductor wafer 2 is divided by the reforming layer 210 formed along the dividing line 22 inside the substrate 20. The starting point is divided into individual elements 23 while forming a space S between the elements.
接著，如圖12(c)所示，作動拾取式夾頭83以將 元件23吸附、從切割膠帶50剝離並拾取、搬送到圖未示出的托盤上或黏晶(die bonding)步驟。再者，在拾取步驟中，因為如上述地貼在切割膠帶50上的一個個的元件23間的間隙S會被擴大，所以不會有與相鄰元件23接觸的情形而可以容易地進行拾取。 Next, as shown in FIG. 12(c), the pickup chuck 83 is actuated to The element 23 is adsorbed, peeled off from the dicing tape 50, picked up, transferred to a tray not shown, or a die bonding step. Further, in the pickup step, since the gap S between the individual elements 23 attached to the dicing tape 50 as described above is enlarged, there is no contact with the adjacent member 23, and the pickup can be easily performed. .
2‧‧‧半導體晶圓 2‧‧‧Semiconductor wafer
20‧‧‧基板 20‧‧‧Substrate
21‧‧‧功能層 21‧‧‧ functional layer
21a‧‧‧表面 21a‧‧‧Surface
22‧‧‧分割預定線 22‧‧‧Division line
210‧‧‧改質層 210‧‧‧Modified layer
220‧‧‧雷射加工溝 220‧‧‧Laser processing ditch
41‧‧‧夾頭台 41‧‧‧ chuck table
422‧‧‧聚光器 422‧‧‧ concentrator
50‧‧‧切割膠帶 50‧‧‧Cut Tape
P‧‧‧聚光點 P‧‧‧ spotlight
LB‧‧‧脈衝雷射光線 LB‧‧‧pulse laser light
X1、X2‧‧‧箭形符號 X1, X2‧‧‧ arrow symbol
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| JP2013130517A JP2015005648A (en) | 2013-06-21 | 2013-06-21 | Wafer processing method |
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| TW201503253A true TW201503253A (en) | 2015-01-16 |
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| CN115255678A (en) * | 2022-09-22 | 2022-11-01 | 苏州芯海半导体科技有限公司 | Semiconductor wafer double-film cutting equipment |
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| JP2005012203A (en) * | 2003-05-29 | 2005-01-13 | Hamamatsu Photonics Kk | Laser machining method |
| JP2005116844A (en) * | 2003-10-09 | 2005-04-28 | Matsushita Electric Ind Co Ltd | Method for manufacturing semiconductor device |
| JP2009088252A (en) * | 2007-09-28 | 2009-04-23 | Sharp Corp | Method for dicing wafer, and semiconductor chip |
| JP4600495B2 (en) * | 2008-03-06 | 2010-12-15 | セイコーエプソン株式会社 | Wafer take-out apparatus and semiconductor device manufacturing method |
| JP2009290052A (en) * | 2008-05-30 | 2009-12-10 | Disco Abrasive Syst Ltd | Method of dividing wafer |
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| CN115255678A (en) * | 2022-09-22 | 2022-11-01 | 苏州芯海半导体科技有限公司 | Semiconductor wafer double-film cutting equipment |
| CN115255678B (en) * | 2022-09-22 | 2022-12-09 | 苏州芯海半导体科技有限公司 | Semiconductor wafer double-film cutting equipment |
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