TW201501573A - Plasma tuning rods in microwave resonator processing systems - Google Patents

Abstract

A plasma tuning rod system is provided with one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods (170a-j and 175a-j, 270a-h and 275a-h, 370a-f and 375a-f, 470a-d and 475a-d, 570a-d and 575a-d, 670a-d and 675a-d, 770a-d and 775a-d, 911a-f, 912a-f, 1070a-h and 1075a-h, 1170 and 1175) within and/or adjacent to the plasma. One or more microwave cavity assemblies (168a, 168b, 268a, 268b, 368a, 368b, 468a, 468b, 968a-f, 1168) can be coupled to a process chamber (110, 210, 310, 410, 910, 1010, 1110), and can comprise one or more tuning spaces/cavities (169a, 169b, 269a, 269b, 369a, 369b, 469a, 469b, 1069a-d, 1169). Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM energy from the resonant cavities to the process space (115, 215, 315, 415, 915, 1015) within the process chamber and thereby create uniform plasma within the process space.

Description

微波共振器處理系統中之電漿調整桿Plasma adjustment rod in microwave resonator processing system

本申請案係美國專利申請案第13/249,485號（代理人申請案編號TEA-071）的部分延續案，美國專利申請案第13/249,485號係申請於西元2011年9月30日，發明名稱為PLASMA TUNING RODS IN MICROWAVE RESONATOR PROCESSING SYSTEMS，其全部內容藉由參照全部納入作為本案揭示內容的一部分。This application is a continuation of U.S. Patent Application Serial No. 13/249,485 (Attorney Application No. TEA-071), and U.S. Patent Application No. 13/249,485 is filed on September 30, 2011, the name of the invention. The PLASMA TUNING RODS IN MICROWAVE RESONATOR PROCESSING SYSTEMS, the entire contents of which are incorporated herein by reference in its entirety.

本發明係關於基板/晶圓處理，且更特別關於用以處理基板及/或半導體晶圓的微波處理系統及方法。This invention relates to substrate/wafer processing, and more particularly to microwave processing systems and methods for processing substrates and/or semiconductor wafers.

典型上，在半導體處理期間，利用（乾式）電漿蝕刻製程，沿著圖案化於半導體基板上的細線或於介層窗或接觸窗之內將材料加以移除或蝕刻。電漿蝕刻製程一般包含將具有上覆圖案化保護層（例如光阻層）之半導體基板置入一製程腔室。Typically, during semiconductor processing, the material is removed or etched along a thin line patterned on the semiconductor substrate or within a via or contact window using a (dry) plasma etch process. The plasma etch process generally involves placing a semiconductor substrate having an overlying patterned protective layer (e.g., a photoresist layer) into a process chamber.

一旦將基板放置於該腔室之內，一可離子化解離氣體混合物以一預先指定的流速導入該腔室之內，而此時真空泵被調節以達到周圍製程壓力。之後，當所存在的一部分氣體物種在與高能電子碰撞之後被離子化之時，將電漿形成。此外，經加熱的電子係用以將若干混合氣體物種解離，且產生適用於蝕刻暴露表面的反應物種。一旦電漿形成，藉由電漿蝕刻基板的任何暴露表面。將該製程調整以達到最佳的條件，包括所欲反應物和離子群體的適當濃度，以蝕刻基板的暴露區域中的各種特徵部（例如溝槽、介層窗、接觸窗等）。需要進行蝕刻處的基板材料包含例如二氧化矽（SiO₂ ）、多晶矽、及矽氮化物。Once the substrate is placed within the chamber, an ionizable dissociated gas mixture is introduced into the chamber at a pre-specified flow rate, at which time the vacuum pump is adjusted to achieve ambient process pressure. Thereafter, the plasma is formed when a portion of the gas species present is ionized after collision with high energy electrons. In addition, the heated electrons are used to dissociate several mixed gas species and produce reactive species suitable for etching exposed surfaces. Once the plasma is formed, any exposed surface of the substrate is etched by the plasma. The process is adjusted to achieve optimal conditions, including the desired concentration of reactants and ionic populations, to etch various features (e.g., trenches, vias, contact windows, etc.) in the exposed regions of the substrate. The substrate material to be etched includes, for example, cerium oxide (SiO ₂ ), polycrystalline germanium, and germanium nitride.

如以上所述，傳統上，已發展各種技術，將氣體激發為電漿，以在半導體元件製造期間處理基板。特別是，通常已將（「平行板」）電容耦合電漿（CCP）處理系統、或電感耦合電漿（ICP）處理系統運用於電漿激發。其他型態的電漿源，包含微波電漿源（包含利用電子迴旋共振（ECR）者）、表面波電漿（SWP）源、及螺旋電漿源。As described above, various techniques have been developed to excite gases into plasma to process substrates during fabrication of semiconductor components. In particular, ("parallel plate") capacitively coupled plasma (CCP) processing systems, or inductively coupled plasma (ICP) processing systems have typically been employed for plasma excitation. Other types of plasma sources include microwave plasma sources (including electron cyclotron resonance (ECR) sources), surface wave plasma (SWP) sources, and spiral plasma sources.

微波處理系統提供優於CCP系統、ICP系統、及共振加熱系統之改良的電漿處理效能(尤其於蝕刻製程方面)逐漸變成共識。微波處理系統在相對較低的波茲曼電子溫度（T_e ）下產生高程度的離子化。此外，EM來源通常產生富含降低分子解離之電子激發分子物種的電漿。然而，微波處理系統的實際實施仍受限於若干缺陷，包含例如電漿穩定性和均勻性。The improved plasma processing performance (especially in the etching process) of microwave processing systems that provide superior CCP systems, ICP systems, and resonant heating systems has become a consensus. Microwave processing systems produce a high degree of ionization at relatively low Boltzmann electron temperatures (T _e ). In addition, EM sources typically produce plasmas rich in electron-inducing molecular species that reduce molecular dissociation. However, the actual implementation of microwave processing systems is still limited by a number of drawbacks including, for example, plasma stability and uniformity.

本發明係關於微波處理系統，且更特別是關於在微波處理系統中的穩定和/或均勻腔組件。This invention relates to microwave processing systems, and more particularly to stable and/or uniform cavity assemblies in microwave processing systems.

根據本發明的實施例，一微波處理系統包含：一製程腔室，具有一製程空間，用於處理其中的一基板；及一個以上腔組件，連結至該製程腔室的一側腔室壁，該等腔組件每一者具有一電磁（EM）能量調整空間於其中。一組EM耦合區域係建立在該等EM能量調整空間之中，且一組隔離組件係連結至該側腔室壁並且用以將該等第一EM能量調整空間隔離於該製程空間。一組電漿調整桿係與該組隔離組件連結，該組電漿調整桿具有一組電漿調整部及一組EM調整部，該組電漿調整部係建構在該製程空間之中，該組EM調整部係建構在該等EM能量調整空間之中且連結至該組EM耦合區域其中至少一者。一控制器係連結至該一個以上腔組件，其中該控制器係用以控制在該等EM能量調整空間之中的該組EM耦合區域，藉此控制在該製程空間之中的電漿均勻性。According to an embodiment of the invention, a microwave processing system includes: a process chamber having a process space for processing one of the substrates; and one or more chamber assemblies coupled to one of the chamber walls of the process chamber, Each of the chamber components has an electromagnetic (EM) energy adjustment space therein. A set of EM coupling regions are established in the EM energy adjustment spaces, and a set of isolation components are coupled to the side chamber walls and are used to isolate the first EM energy adjustment spaces from the process space. a set of plasma adjusting rods is coupled to the set of isolation components, the set of plasma adjusting rods has a set of plasma adjusting parts and a set of EM adjusting parts, and the set of plasma adjusting parts is constructed in the process space, The group EM adjustment unit is constructed in the EM energy adjustment space and coupled to at least one of the set of EM coupling regions. A controller is coupled to the one or more chamber assemblies, wherein the controller is configured to control the set of EM coupling regions in the EM energy adjustment spaces, thereby controlling plasma uniformity in the process space .

此處以各種不同的實施例揭露一種微波處理系統。然而，熟習相關技藝者可了解，在不具一或多個特定細節，或者運用其他代替物和/或額外的方法、材料、或構件的情況下，仍可實行該等不同的實施例。另一方面，此處不詳細顯示或描述眾所周知的結構、材料、或操作，以避免混淆本發明的各種實施例態樣。A microwave processing system is disclosed herein in various different embodiments. It will be appreciated by those skilled in the art, however, that the various embodiments may be practiced without one or more specific details, or other alternatives and/or additional methods, materials, or components. On the other hand, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring the various embodiments of the present invention.

類似地，為了說明的目的，描述特定數量、材料、及構造，以提供對本發明的完整理解。儘管如此，可在不具備該等特定細節下實施本發明。此外，應理解在圖示中顯示的各種實施例係例示圖形，且不需要依比例繪製。The specific quantities, materials, and configurations are described in order to provide a complete understanding of the invention. Nevertheless, the invention may be practiced without these specific details. In addition, it should be understood that the various embodiments shown in the figures are illustrative and not necessarily to scale.

在通篇說明書中，所提及「一個實施例」或「一實施例」或其變形係意指包含於本發明至少一個實施例中的相關於實施例加以描述的特定特徵、結構、材料、或特性，但並非意指其存在於每一個實施例。因此，在整個此說明書中各種地方所出現的例如「在一個實施例」或「在一實施例」用語，不必然意指本發明的相同實施例。此外，在一個以上實施例中可以任何適當方式將特定的特徵、結構、材料、或特性加以組合。Throughout the specification, the phrase "one embodiment" or "an embodiment" or a variant thereof is intended to mean a particular feature, structure, material, or structure, which is described in connection with the embodiments, in at least one embodiment of the invention. Or characteristic, but does not mean that it exists in every embodiment. Therefore, the terms "in one embodiment" or "in an embodiment", which are used in various places in this specification, are not necessarily intended to mean the same embodiment of the invention. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

儘管如此，吾人應明白，儘管係解釋一般概念之發明本質，包含於敘述中之特徵亦為發明本質。Nevertheless, it should be understood that although the nature of the invention is explained in the general concept, the features included in the description are also the essence of the invention.

現在參照圖式，其中於數個圖示裡相似的參考符號表示相同或相對應的部件，圖1A-1C描述根據本發明實施例之第一微波處理系統的不同視圖。第一微波處理系統100可使用於電漿罩幕（plasma curtain）沉積系統或電漿輔助沉積系統。Referring now to the drawings in which like reference numerals refer to the same or the same, in the drawings, FIGS. 1A-1C depict different views of a first microwave processing system in accordance with an embodiment of the present invention. The first microwave processing system 100 can be used in a plasma curtain deposition system or a plasma assisted deposition system.

圖1A顯示在第一微波處理系統100中製程腔室110的局部切開俯視圖。該俯視圖顯示形成該製程腔室110的第一介面組件112a、第二介面組件112b、及連結至第一介面組件112a和第二介面組件112b的複數額外的腔室壁112的x/y平面圖。舉例來說，腔室壁112可具有與其相關聯的壁厚度（t），且該壁厚度（t）可變化於約1 mm到約5 mm。第一介面組件112a可具有與其相關聯的第一介面厚度（t_i1 ），且該第一介面厚度（t_i1 ）可變化於約1 mm到約10 mm。第二介面組件112b可具有與其相關聯的第二介面厚度（t_i2 ），且該第二介面厚度（t_i2 ）可變化於約1 mm到約10 mm。製程空間115可具有與其相關聯的長度（x_T ），且該長度（x_T ）可變化於約10 mm到約500 mm。在此實施例和所有後續的實施例中，吾人可明白設置的尺寸可與所記載的不同，舉例來說，製程空間可具有上達數公尺的長度或半徑，以及上達30 mm以上的介面和壁厚度。FIG. 1A shows a partial cutaway plan view of process chamber 110 in first microwave processing system 100. The top view shows an x/y plan view of a first interface component 112a, a second interface component 112b that forms the process chamber 110, and a plurality of additional chamber walls 112 that are joined to the first interface component 112a and the second interface component 112b. For example, the chamber wall 112 can have a wall thickness (t) associated therewith, and the wall thickness (t) can vary from about 1 mm to about 5 mm. The first interface component 112a can have a first interface thickness (t _i1 ) associated therewith, and the first interface thickness (t _i1 ) can vary from about 1 mm to about 10 mm. The second interface component 112b can have a second interface thickness (t _i2 ) associated therewith, and the second interface thickness (t _i2 ) can vary from about 1 mm to about 10 mm. The process space 115 can have a length (x _T ) associated therewith, and the length (x _T ) can vary from about 10 mm to about 500 mm. In this and all subsequent embodiments, it will be appreciated that the dimensions of the arrangement may differ from those recited, for example, the process space may have a length or radius of up to several meters, and an interface of up to 30 mm and Wall thickness.

該俯視圖顯示具有第一EM能量調整空間169a於其中的第一腔組件168a的切開視圖，且該第一腔組件168a可包含第一腔壁165a、第二腔壁166a、至少一個第三腔壁167a、及一個以上額外的腔壁（未顯示）。舉例來說，第一腔組件168a可利用第一腔壁165a連結至第一介面組件112a，並且壁（165a、166a、及167a）可包含介電材料且可具有與其相關聯的壁厚度（t_a ），而壁厚度（t_a ）可變化於約1 mm到約5 mm。此外，第一EM能量調整空間169a可具有與其相關聯的第一長度（x_T1a ）及第一寬度（y_1a ），第一長度（x_T1a ）可變化於約10 mm到約500 mm，且第一寬度（y_1a ）可變化於自約5 mm到約50 mm。The top view shows a cutaway view of the first chamber assembly 168a having the first EM energy adjustment space 169a therein, and the first chamber assembly 168a can include a first chamber wall 165a, a second chamber wall 166a, and at least one third chamber wall 167a, and more than one additional lumen wall (not shown). For example, the first cavity assembly 168a can be coupled to the first interface component 112a using the first cavity wall 165a, and the walls (165a, 166a, and 167a) can comprise a dielectric material and can have a wall thickness associated therewith (t _a ), and the wall thickness (t _a ) can vary from about 1 mm to about 5 mm. In addition, the first EM energy adjustment space 169a may have a first length (x _T1a ) and a first width (y _1a ) associated therewith, and the first length (x _T1a ) may vary from about 10 mm to about 500 mm, and The first width (y _1a ) can vary from about 5 mm to about 50 mm.

該俯視圖亦顯示具有第二EM能量調整空間169b於其中的第二腔組件168b的切開視圖，且該第二腔組件168b可包含第一腔壁165b、第二腔壁166b、至少一個第三腔壁167b、及一個以上額外的腔壁（未顯示）。舉例來說，第二腔組件168b可利用第一腔壁165b連結至第二介面組件112b，並且壁（165b、166b、及167b）可包含介電材料且可具有與其相關聯的壁厚度（t_b ），而壁厚度（t_b ）可變化於約1 mm到約5 mm。此外，第二EM能量調整空間169b可具有與其相關聯的第二長度（x_T1b ）及第二寬度（y_1b ），第二長度（x_T1b ）可變化於自約10 mm到約500 mm，且第二寬度（y_1b ）可變化於自約5 mm到約50 mm。在此實施例和所有後續的實施例中，吾人可明白設置的尺寸可與所記載的不同，腔壁厚度可達30 mm以上，且EM能量調整空間可具有上達數公尺的長度及/或寬度。The top view also shows a cutaway view of the second chamber assembly 168b having the second EM energy adjustment space 169b therein, and the second chamber assembly 168b can include a first chamber wall 165b, a second chamber wall 166b, and at least a third chamber Wall 167b, and more than one additional lumen wall (not shown). For example, the second cavity assembly 168b can be coupled to the second interface component 112b using the first cavity wall 165b, and the walls (165b, 166b, and 167b) can comprise a dielectric material and can have a wall thickness associated therewith (t _b ), and the wall thickness (t _b ) can vary from about 1 mm to about 5 mm. In addition, the second EM energy adjustment space 169b may have a second length (x _T1b ) and a second width (y _1b ) associated therewith, and the second length (x _T1b ) may vary from about 10 mm to about 500 mm. And the second width (y _1b ) can vary from about 5 mm to about 50 mm. In this and all subsequent embodiments, it will be appreciated that the dimensions of the arrangement may differ from those described, the wall thickness of the chamber may be up to 30 mm or more, and the EM energy adjustment space may have a length of up to several meters and/or width.

在若干例示系統中，一第一組隔離組件（164a、164b、164c、164d、及164e）可被可移除自如地連結至第一介面組件112a，且可建構成用以將製程空間115隔離於第一EM能量調整空間169a。該第一組隔離組件（164a、164b、164c、164d、及164e）可用以將第一組電漿調整桿﹛（170a、170b、170c、170d、及170e）和（175a、175b、175c、175d、及175e）﹜可移除自如地連結至第一介面組件112a。舉例而言，第一組電漿調整部（170a、170b、170c、170d、及170e）可配置於製程空間115之中，且第一組EM調整部（175a、175b、175c、175d、及175e）可配置於第一EM能量調整空間169a之內。In several exemplary systems, a first set of isolation components (164a, 164b, 164c, 164d, and 164e) can be removably coupled to the first interface component 112a and can be configured to isolate the process space 115 The first EM energy adjustment space 169a. The first set of isolation assemblies (164a, 164b, 164c, 164d, and 164e) can be used to set the first set of plasma adjustment rods {(170a, 170b, 170c, 170d, and 170e) and (175a, 175b, 175c, 175d) And 175e)} are removably coupled to the first interface component 112a. For example, the first set of plasma adjustment sections (170a, 170b, 170c, 170d, and 170e) may be disposed in the process space 115, and the first set of EM adjustment sections (175a, 175b, 175c, 175d, and 175e) ) can be disposed within the first EM energy adjustment space 169a.

一第二組隔離組件（164f、164g、164h、164i、及164j）可被可移除自如地連結至第二介面組件112b，且可建構成用以將製程空間115隔離於第二EM能量調整空間169b。該第二組隔離組件（164f、164g、164h、164i、及164j）可用以將第二組電漿調整桿﹛（170f、170g、170h、170i、及170j）和（175f、175g、175h、175i、及175j）﹜可移除自如地連結至第二介面組件112b。舉例而言，第二組電漿調整部（170f、170g、170h、170i、及170j）可配置於製程空間115之中，且第二組EM調整部（175f、175g、175h、175i、及175j）可配置於第二EM能量調整空間169b之內。A second set of isolation components (164f, 164g, 164h, 164i, and 164j) can be removably coupled to the second interface component 112b and can be configured to isolate the process space 115 from the second EM energy adjustment Space 169b. The second set of isolation components (164f, 164g, 164h, 164i, and 164j) can be used to set a second set of plasma adjustment rods {(170f, 170g, 170h, 170i, and 170j) and (175f, 175g, 175h, 175i) And 175j)} are removably connectable to the second interface component 112b. For example, the second set of plasma adjustment sections (170f, 170g, 170h, 170i, and 170j) may be disposed in the process space 115, and the second set of EM adjustment sections (175f, 175g, 175h, 175i, and 175j) ) can be disposed within the second EM energy adjustment space 169b.

仍然參考圖1A，第一電漿調整桿（170a, 175a）可包含介電材料，可具有第一電漿調整部170a，其可於利用（x_2a ）加以定義的第一位置延伸第一電漿調整距離171a進入製程空間115。舉例來說，第一電漿調整距離171a可變化於自約10 mm到約400 mm。在此實施例和所有後續的實施例中，吾人可明白設置的尺寸可與所記載的不同，舉例來說，該距離可為1公尺以上，且可長達至製程空間對向側的整個距離。Still referring to FIG. 1A, the first plasma adjustment rod (170a, 175a) may comprise a dielectric material, and may have a first plasma adjustment portion 170a that may extend the first electricity at a first position defined by ( _x2a ) The slurry adjustment distance 171a enters the process space 115. For example, the first plasma adjustment distance 171a can vary from about 10 mm to about 400 mm. In this and all subsequent embodiments, it will be understood that the dimensions of the arrangement may differ from those described, for example, the distance may be more than 1 meter and may extend up to the entire opposite side of the process space. distance.

第一EM耦合區域162a可在建立於第一腔組件168a之中的第一EM能量調整空間169a之內於由第一腔壁165a之第一EM耦合距離176a處加以建立，並且第一EM調整部175a可延伸進入第一EM耦合區域162a。第一EM調整部175a可自第一EM耦合區域162a取得第一微波能量，且第一微波能量可利用第一電漿調整部170a於第一位置（x_2a ）傳送至製程空間115。第一EM耦合區域162a可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第一EM耦合距離176a可變化於約0.01 mm到約10 mm，並且第一EM耦合距離176a可為波長相依且可變化於約（λ/4）到約（10λ）。在此實施例和所有後續的實施例中，吾人可明白設置的尺寸可與所記載的不同，舉例來說，該距離可上達20 mm以上。The first EM coupling region 162a can be established within the first EM energy adjustment space 169a established in the first cavity assembly 168a at the first EM coupling distance 176a of the first cavity wall 165a, and the first EM adjustment Portion 175a can extend into first EM coupling region 162a. The first EM adjustment portion 175a can obtain the first microwave energy from the first EM coupling region 162a, and the first microwave energy can be transmitted to the process space 115 at the first position (x _2a ) by the first plasma adjustment portion 170a. The first EM coupling region 162a can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the first EM coupling distance 176a can vary from about 0.01 mm to about 10 mm, and the first EM coupling distance 176a can be wavelength dependent and can vary from about (λ/4) to about (10λ). In this and all subsequent embodiments, it will be appreciated that the dimensions of the arrangement may differ from those recited, for example, the distance may be up to 20 mm or more.

第一電漿調整板161a可連結至第一控制組件160a，其可用以在第一EM能量調整空間169a之內將該第一電漿調整板161a相對於第一電漿調整桿（170a, 175a）的第一EM調整部175a移動163a一第一EM調整距離177a。該第一控制組件160a和該第一電漿調整板161a可包含介電材料，且可用以將自第一EM耦合區域162a耦合至第一電漿調整桿（170a, 175a）的第一EM調整部175a之微波能量予以最佳化。第一EM調整距離177a可建立於第一EM能量調整空間169a內之第一EM調整部175a和第一電漿調整板161a之間，且第一EM調整距離177a可變化於約0.01 mm到約1 mm。在此實施例和所有後續的實施例中，吾人可明白設置的尺寸可與所記載的不同，舉例來說，該距離可上達20 mm以上。The first plasma adjustment plate 161a can be coupled to the first control component 160a, which can be used to move the first plasma adjustment plate 161a relative to the first plasma adjustment bar (170a, 175a) within the first EM energy adjustment space 169a. The first EM adjustment portion 175a moves 163a to a first EM adjustment distance 177a. The first control assembly 160a and the first plasma conditioning plate 161a can comprise a dielectric material and can be used to couple the first EM adjustment from the first EM coupling region 162a to the first plasma adjustment rod (170a, 175a) The microwave energy of portion 175a is optimized. The first EM adjustment distance 177a may be established between the first EM adjustment portion 175a and the first plasma adjustment plate 161a in the first EM energy adjustment space 169a, and the first EM adjustment distance 177a may vary from about 0.01 mm to about 1 mm. In this and all subsequent embodiments, it will be appreciated that the dimensions of the arrangement may differ from those recited, for example, the distance may be up to 20 mm or more.

第一電漿調整桿（170a, 175a）可具有與其相關聯的第一直徑（d_1a ），且第一直徑（d_1a ）可變化於約0.01 mm到約1 mm。第一電漿調整板161a可具有與其相關聯的第一直徑（D_1a ），且第一直徑（D_1a ）可變化於約1 mm到約10 mm。第一EM耦合區域162a、第一控制組件160a、及第一電漿調整板161a可具有與其相關聯的第一x/y平面偏移（x_1a ），且第一x/y平面偏移（x_1a ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。舉例來說，第一控制組件160a可具有圓柱形構造、及可變化於約1 mm到約5 mm的直徑（d_1a ）。在此實施例和所有後續的實施例中，吾人可明白所設置的尺寸可與所記載的不同，舉例來說，該電漿調整桿和板可具有上達80 mm以上的直徑，且控制組件直徑可上達10 mm以上。The first diameter (d _1a) a first plasma adjustment lever (170a, 175a) may have associated therewith, and the first diameter (d _1a) may vary from about 0.01 mm to about 1 mm. The first plasma conditioning plate 161a can have a first diameter (D _1a ) associated therewith, and the first diameter (D _1a ) can vary from about 1 mm to about 10 mm. The first EM coupling region 162a, the first control component 160a, and the first plasma conditioning plate 161a may have a first x/y plane offset (x _1a ) associated therewith, and the first x/y plane offset ( x _1a ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). For example, the first control assembly 160a can have a cylindrical configuration and a diameter (d _1a ) that can vary from about 1 mm to about 5 mm. In this and all subsequent embodiments, it will be appreciated that the dimensions provided may differ from those recited, for example, the plasma adjustment rods and plates may have diameters up to 80 mm and control assembly diameter Can be up to 10 mm or more.

第二電漿調整桿（170b, 175b）可包含介電材料，且可具有第二電漿調整部170b，其於利用（x_2b ）加以定義的第二位置延伸第二電漿調整距離171b進入製程空間115。舉例來說，第二電漿調整距離171b可變化於約10 mm到約400 mm。The second plasma adjustment rod (170b, 175b) may comprise a dielectric material and may have a second plasma adjustment portion 170b extending into the second plasma adjustment distance 171b at a second position defined by ( _x2b ) Process space 115. For example, the second plasma adjustment distance 171b can vary from about 10 mm to about 400 mm.

第二EM耦合區域162b可在建立於第一腔組件168a之中的第一EM能量調整空間169a之內於由第一腔壁165a之第二EM耦合距離176b處加以建立，並且第二EM調整部175b可延伸進入第二EM耦合區域162b。第二EM調整部175b可自第二EM耦合區域162b取得第二微波能量，且第二微波能量可利用第二電漿調整部170b於第二位置（x_2b ）傳送至製程空間115。第二EM耦合區域162b可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或M其任何組合。舉例來說，第二EM耦合距離176b可變化於約0.01 mm到約10 mm，並且第二EM耦合距離176b可為波長相依且可變化於約（λ/4）到約（10λ）。The second EM coupling region 162b can be established within the first EM energy adjustment space 169a established in the first cavity assembly 168a at a second EM coupling distance 176b by the first cavity wall 165a, and the second EM adjustment Portion 175b can extend into the second EM coupling region 162b. The second EM adjustment portion 175b can obtain the second microwave energy from the second EM coupling region 162b, and the second microwave energy can be transmitted to the process space 115 at the second position (x _2b ) by the second plasma adjustment portion 170b. The second EM coupling region 162b can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the second EM coupling distance 176b can vary from about 0.01 mm to about 10 mm, and the second EM coupling distance 176b can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第二電漿調整板161b可連結至第二控制組件160b，其可用以在第一EM能量調整空間169a之內將該第二電漿調整板161b相對於第二電漿調整桿（170b, 175b）的第二EM調整部175b移動163b一第二EM調整距離177b。該第二控制組件160b和該第二電漿調整板161b可用以將自第二EM耦合區域162b耦合至第二電漿調整桿（170b, 175b）的第二EM調整部175b之微波能量予以最佳化。舉例來說，第二EM調整距離177b可建立於第一EM能量調整空間169a內之第二EM調整部175b和第二電漿調整板161b之間，且第二EM調整距離177b可變化於約0.01 mm到約1 mm。The second plasma adjustment plate 161b can be coupled to the second control assembly 160b, which can be used to move the second plasma adjustment plate 161b relative to the second plasma adjustment bar (170b, 175b) within the first EM energy adjustment space 169a. The second EM adjustment portion 175b moves 163b to a second EM adjustment distance 177b. The second control component 160b and the second plasma adjustment plate 161b can be used to couple the microwave energy of the second EM adjustment portion 175b coupled from the second EM coupling region 162b to the second plasma adjustment rod (170b, 175b). Jiahua. For example, the second EM adjustment distance 177b may be established between the second EM adjustment portion 175b and the second plasma adjustment plate 161b in the first EM energy adjustment space 169a, and the second EM adjustment distance 177b may vary from about From 0.01 mm to about 1 mm.

第二電漿調整桿（170b, 175b）可具有與其相關聯的第二直徑（d_1b ），且第二直徑（d_1b ）可變化於約0.01 mm到約1 mm。第二電漿調整板161b可包含介電材料，且可具有與其相關聯的第二直徑（D_1b ），且第二直徑（D_1b ）可變化於約1 mm到約10 mm。第二EM耦合區域162b、第二控制組件160b、及第二電漿調整板161b可具有與其相關聯的第二x/y平面偏移（x_1b ），且第二x/y平面偏移（x_1b ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。舉例來說，第二控制組件160b可包含介電材料，且可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1b ）。The second diameter (d _1b) a second plasma adjustment lever (170b, 175b) may have associated therewith, and a second diameter (d _1b) may vary from about 0.01 mm to about 1 mm. The second plasma conditioning plate 161b can comprise a dielectric material and can have a second diameter (D _1b ) associated therewith, and the second diameter (D _1b ) can vary from about 1 mm to about 10 mm. The second EM coupling region 162b, the second control component 160b, and the second plasma conditioning plate 161b may have a second x/y plane offset (x _1b ) associated therewith, and a second x/y plane offset ( x _1b ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). For example, the second control component 160b can comprise a dielectric material and can have a cylindrical configuration and a diameter (d _1b ) that can vary from about 1 mm to about 5 mm.

第三電漿調整桿（170c, 175c）可包含介電材料，且可具有第三電漿調整部170c，其可於利用（x_2c ）加以定義的第三位置延伸第三電漿調整距離171c進入製程空間115。舉例來說，第三電漿調整距離171c可變化於約10 mm到約400 mm。The third plasma adjustment rod (170c, 175c) may include a dielectric material, and may have a third plasma adjustment portion 170c that may extend the third plasma adjustment distance 171c at a third position defined by (x _2c ) Enter the process space 115. For example, the third plasma adjustment distance 171c can vary from about 10 mm to about 400 mm.

第三EM耦合區域162c可在建立於第一腔組件168a之中的第一EM能量調整空間169a之內於由第一腔壁165a之第三EM耦合距離176c處加以建立，並且第三EM調整部175c可延伸進入第三EM耦合區域162c。第三EM調整部175c可自第三EM耦合區域162c取得第三微波能量，且第三微波能量可利用第三電漿調整部170c於第三位置（x_2c ）傳送至製程空間115。第三EM耦合區域162c可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第三EM耦合距離176c可變化於約0.01 mm到約10 mm，並且第三EM耦合距離176c可為波長相依且可變化於約（λ/4）到約（10λ）。The third EM coupling region 162c can be established within the first EM energy adjustment space 169a established in the first cavity assembly 168a at a third EM coupling distance 176c by the first cavity wall 165a, and the third EM adjustment Portion 175c can extend into the third EM coupling region 162c. The third EM adjustment portion 175c may obtain the third microwave energy from the third EM coupling region 162c, and the third microwave energy may be transmitted to the process space 115 at the third position (x _2c ) by the third plasma adjustment portion 170c. The third EM coupling region 162c can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the third EM coupling distance 176c can vary from about 0.01 mm to about 10 mm, and the third EM coupling distance 176c can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第三電漿調整板161c可連結至第三控制組件160c，其可用以在第一EM能量調整空間169a之內將該第三電漿調整板161c相對於第三電漿調整桿（170c, 175c）的第三EM調整部175c移動163c一第三EM調整距離177c。該第三控制組件160c和該第三電漿調整板161c可用以將自第三EM耦合區域162c耦合至第三電漿調整桿（170c, 175c）的第三EM調整部175c之微波能量予以最佳化。舉例來說，第三EM調整距離177c可建立於第一EM能量調整空間169a內之第三EM調整部175c和第三電漿調整板161c之間，且第三EM調整距離177c可變化於約0.01 mm到約1 mm。The third plasma adjustment plate 161c can be coupled to the third control component 160c, which can be used to move the third plasma adjustment plate 161c relative to the third plasma adjustment bar (170c, 175c) within the first EM energy adjustment space 169a. The third EM adjustment portion 175c moves 163c to a third EM adjustment distance 177c. The third control component 160c and the third plasma adjustment plate 161c can be used to maximize the microwave energy of the third EM adjustment portion 175c coupled from the third EM coupling region 162c to the third plasma adjustment lever (170c, 175c). Jiahua. For example, the third EM adjustment distance 177c may be established between the third EM adjustment portion 175c and the third plasma adjustment plate 161c in the first EM energy adjustment space 169a, and the third EM adjustment distance 177c may vary from about From 0.01 mm to about 1 mm.

第三電漿調整桿（170c, 175c）可具有與其相關聯的第三直徑（d_1c ），且第三直徑（d_1c ）可變化於約0.01 mm到約1 mm。第三電漿調整板161c可包含介電材料，且可具有與其相關聯的第三直徑（D_1c ），且第三直徑（D_1c ）可變化於約1 mm到約10 mm。第三EM耦合區域162c、第三控制組件160c、及第三電漿調整板161c可具有與其相關聯的第三x/y平面偏移（x_1c ），且第三x/y平面偏移（x_1c ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。舉例來說，第三控制組件160c可包含介電材料，且可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1c ）。The third plasma adjustment rod (170c, 175c) can have a third diameter (d _1c ) associated therewith, and the third diameter (d _1c ) can vary from about 0.01 mm to about 1 mm. The third plasma conditioning plate 161c can comprise a dielectric material and can have a third diameter (D _1c ) associated therewith, and the third diameter (D _1c ) can vary from about 1 mm to about 10 mm. The third EM coupling region 162c, the third control component 160c, and the third plasma conditioning plate 161c may have a third x/y plane offset (x _1c ) associated therewith, and a third x/y plane offset ( x _1c ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). For example, the third control component 160c can comprise a dielectric material and can have a cylindrical configuration and a diameter (d _1c ) that can vary from about 1 mm to about 5 mm.

第四電漿調整桿（170d, 175d）可包含介電材料，且可具有第四電漿調整部170d，其可於利用（x_2d ）加以定義的第四位置延伸第四電漿調整距離171d進入製程空間115。舉例來說，第四電漿調整距離171d可變化於約10 mm到約400 mm。The fourth adjusting lever plasma (170d, 175d) may comprise a dielectric material, and may have a fourth portion 170d to adjust the plasma, which may be in use (x _2d) extending in a fourth position to be defined by adjusting the distance a fourth plasma 171d Enter the process space 115. For example, the fourth plasma adjustment distance 171d can vary from about 10 mm to about 400 mm.

第四EM耦合區域162d可在建立於第一腔組件168a之中的第一EM能量調整空間169a之內於自第一腔壁165a之第四EM耦合距離176d處加以建立，並且第四EM調整部175d可延伸進入第四EM耦合區域162d。第四EM調整部175d可自第四EM耦合區域162d取得第四微波能量，且第四微波能量可利用第四電漿調整部170d於第四位置（x_2d ）傳送至製程空間115。第四EM耦合區域162d可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第四EM耦合距離176d可變化於約0.01 mm到約10 mm，並且第四EM耦合距離176d可為波長相依且可變化於約（λ/4）到約（10λ）。The fourth EM coupling region 162d may be established within the first EM energy adjustment space 169a established in the first cavity assembly 168a at a fourth EM coupling distance 176d from the first cavity wall 165a, and the fourth EM adjustment Portion 175d can extend into fourth EM coupling region 162d. The fourth EM adjustment portion 175d may obtain the fourth microwave energy from the fourth EM coupling region 162d, and the fourth microwave energy may be transmitted to the process space 115 at the fourth position ( _x2d ) by the fourth plasma adjustment portion 170d. The fourth EM coupling region 162d can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the fourth EM coupling distance 176d can vary from about 0.01 mm to about 10 mm, and the fourth EM coupling distance 176d can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第四電漿調整板161d可連結至第四控制組件160d，其可用以在第一EM能量調整空間169a之內將該第四電漿調整板161d相對於第四電漿調整桿（170d, 175d）的第四EM調整部175d移動163d一第四EM調整距離177d。該第四控制組件160d和該第四電漿調整板161d可用以將自第四EM耦合區域162d耦合至第四電漿調整桿（170d, 175d）的第四EM調整部175d之微波能量予以最佳化。舉例來說，第四EM調整距離177d可建立於第一EM能量調整空間169a內之第四EM調整部175d和第四電漿調整板161d之間，且第四EM調整距離177d可變化於約0.01 mm到約1 mm。The fourth plasma adjustment plate 161d may be coupled to the fourth control component 160d, which may be used to move the fourth plasma adjustment plate 161d relative to the fourth plasma adjustment bar (170d, 175d) within the first EM energy adjustment space 169a. The fourth EM adjustment portion 175d moves 163d to a fourth EM adjustment distance 177d. The fourth control component 160d and the fourth plasma adjustment plate 161d may be used to couple the microwave energy of the fourth EM adjustment portion 175d coupled from the fourth EM coupling region 162d to the fourth plasma adjustment lever (170d, 175d). Jiahua. For example, the fourth EM adjustment distance 177d may be established between the fourth EM adjustment portion 175d and the fourth plasma adjustment plate 161d in the first EM energy adjustment space 169a, and the fourth EM adjustment distance 177d may vary from about From 0.01 mm to about 1 mm.

第四電漿調整桿（170d, 175d）可具有與其相關聯的第四直徑（d_1d ），且第四直徑（d_1d ）可變化於約0.01 mm到約1 mm。第四電漿調整板161d可具有與其相關聯的第四直徑（D_1d ），且第四直徑（D_1d ）可變化於約1 mm到約10 mm。第四EM耦合區域162d、第四控制組件160d、及第四電漿調整板161d可具有與其相關聯的第四x/y平面偏移（x_1d ），且第四x/y平面偏移（x_1d ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第四控制組件160d可包含介電材料，且可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1d ）。The fourth adjusting lever plasma (170d, 175d) may have associated therewith a fourth diameter (d _1d), and a fourth diameter (d _1d) may vary from about 0.01 mm to about 1 mm. The fourth plasma adjustment plate 161d may have a fourth diameter (D _1d ) associated therewith, and the fourth diameter (D _1d ) may vary from about 1 mm to about 10 mm. The fourth EM coupling region 162d, the fourth control component 160d, and the fourth plasma conditioning plate 161d may have a fourth x/y plane offset (x _1d ) associated therewith, and a fourth x/y plane offset ( x _1d ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The fourth control component 160d can comprise a dielectric material and can have a cylindrical configuration and a diameter (d _1d ) that can vary from about 1 mm to about 5 mm.

第五電漿調整桿（170e, 175e）可包含介電材料，且可具有第五電漿調整部170e，其可於利用（x_2e ）加以定義的第五位置延伸第五電漿調整距離171e進入製程空間115。舉例來說，第五電漿調整距離171e可變化於約10 mm到約400 mm。The fifth plasma adjusting rod (170e, 175e) may include a dielectric material, and may have a fifth plasma adjusting portion 170e that may extend the fifth plasma adjusting distance 171e at a fifth position defined by (x _2e ) Enter the process space 115. For example, the fifth plasma adjustment distance 171e can vary from about 10 mm to about 400 mm.

第五EM耦合區域162e可在建立於第一腔組件168a之中的第一EM能量調整空間169a之內於由第一腔壁165a之第五EM耦合距離176e處加以建立，並且第五EM調整部175e可延伸進入第五EM耦合區域162e。第五EM調整部175e可自第五EM耦合區域162e取得第五微波能量，且第五微波能量可利用第五電漿調整部170e於第五位置（x_2e ）傳送至製程空間115。第五EM耦合區域162e可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第五EM耦合距離176e可變化於約0.01 mm到約10 mm，並且第五EM耦合距離176e可為波長相依且可變化於約（λ/4）到約（10λ）。The fifth EM coupling region 162e can be established within the first EM energy adjustment space 169a established in the first cavity assembly 168a at a fifth EM coupling distance 176e by the first cavity wall 165a, and the fifth EM adjustment Portion 175e can extend into the fifth EM coupling region 162e. The fifth EM adjustment unit 175e can obtain the fifth microwave energy from the fifth EM coupling region 162e, and the fifth microwave energy can be transmitted to the process space 115 at the fifth position (x _2e ) by the fifth plasma adjustment portion 170e. The fifth EM coupling region 162e can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the fifth EM coupling distance 176e can vary from about 0.01 mm to about 10 mm, and the fifth EM coupling distance 176e can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第五電漿調整板161e可包含介電材料，且可連結至第五控制組件160e，其可用以在第一EM能量調整空間169a之內將該第五電漿調整板161e相對於第五電漿調整桿（170e, 175e）的第五EM調整部175e移動163e一第五EM調整距離177e。該第五控制組件160e和該第五電漿調整板161e可用以將自第五EM耦合區域162e耦合至第五電漿調整桿（170e, 175e）的第五EM調整部175e之微波能量予以最佳化。舉例來說，第五EM調整距離177e可建立於第一EM能量調整空間169a內之第五EM調整部175e和第五電漿調整板161e之間，且第五EM調整距離177e可變化於約0.01 mm到約1 mm。The fifth plasma adjustment plate 161e may include a dielectric material and may be coupled to the fifth control component 160e, which may be used to compare the fifth plasma adjustment plate 161e with respect to the fifth electricity within the first EM energy adjustment space 169a. The fifth EM adjustment portion 175e of the slurry adjustment lever (170e, 175e) moves 163e by a fifth EM adjustment distance 177e. The fifth control component 160e and the fifth plasma adjustment plate 161e can be used to couple the microwave energy of the fifth EM adjustment portion 175e coupled from the fifth EM coupling region 162e to the fifth plasma adjustment lever (170e, 175e). Jiahua. For example, the fifth EM adjustment distance 177e may be established between the fifth EM adjustment portion 175e and the fifth plasma adjustment plate 161e in the first EM energy adjustment space 169a, and the fifth EM adjustment distance 177e may vary from about From 0.01 mm to about 1 mm.

第五電漿調整桿（170e, 175e）可具有與其相關聯的第五直徑（d_1e ），且第五直徑（d_1e ）可變化於約0.01 mm到約1 mm。第五電漿調整板161e可具有與其相關聯的第五直徑（D_1e ），且第五直徑（D_1e ）可變化於約1 mm到約10 mm。第五EM耦合區域162e、第五控制組件160e、及第五電漿調整板161e可具有與其相關聯的第五x/y平面偏移（x_1e ），且第五x/y平面偏移（x_1e ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第五控制組件160e可包含介電材料，且可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1e ）。The fifth plasma adjustment rod (170e, 175e) may have a fifth diameter (d _1e ) associated therewith, and the fifth diameter (d _1e ) may vary from about 0.01 mm to about 1 mm. The fifth plasma adjustment plate 161e may have a fifth diameter (D _1e ) associated therewith, and the fifth diameter (D _1e ) may vary from about 1 mm to about 10 mm. The fifth EM coupling region 162e, the fifth control component 160e, and the fifth plasma adjustment plate 161e may have a fifth x/y plane offset (x _1e ) associated therewith, and a fifth x/y plane offset ( x _1e ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The fifth control component 160e can comprise a dielectric material and can have a cylindrical configuration and a diameter (d _1e ) that can vary from about 1 mm to about 5 mm.

繼續參照圖1A，第六電漿調整桿（170f, 175f）可包含介電材料，且可具有第六電漿調整部170f，其可於利用（x_2f ）加以定義的第六位置延伸第六電漿調整距離171f進入製程空間115。第六電漿調整距離171f可變化於約10 mm到約400 mm。With continued reference to Figure 1A, plasma sixth adjustment lever (170f, 175f) may comprise a dielectric material, and may have a sixth adjustment portion 170F plasma, which may be in use (x _2f) extending in the sixth position to be defined in the sixth The plasma adjustment distance 171f enters the process space 115. The sixth plasma adjustment distance 171f can vary from about 10 mm to about 400 mm.

第六EM耦合區域162f可包含介電材料，且可在建立於第二腔組件168b之中的第二EM能量調整空間169b之內於由第一腔壁165b之第六EM耦合距離176f處加以建立，並且第六EM調整部175f可延伸進入第六EM耦合區域162f。第六EM調整部175f可自第六EM耦合區域162f取得第六微波能量，且第六微波能量可利用第六電漿調整部170f於第六位置（x_2f ）傳送至製程空間115。第六EM耦合區域162f可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。第六EM耦合距離176f可變化於約0.01 mm到約10 mm，或者可為波長相依且可變化於約（λ/4）到約（10λ）。The sixth EM coupling region 162f may include a dielectric material and may be disposed within the second EM energy adjustment space 169b of the second cavity assembly 168b at a sixth EM coupling distance 176f of the first cavity wall 165b. Established, and the sixth EM adjustment portion 175f can extend into the sixth EM coupling region 162f. The sixth EM adjusting portion 175f can obtain the sixth microwave energy from the sixth EM coupling region 162f, and the sixth microwave energy can be transmitted to the processing space 115 at the sixth position (x _2f ) by the sixth plasma adjusting portion 170f. The sixth EM coupling region 162f can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. The sixth EM coupling distance 176f can vary from about 0.01 mm to about 10 mm, or can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第六電漿調整板161f可包含介電材料，且可連結至第六控制組件160f，其可用以在第二EM能量調整空間169b之內將該第六電漿調整板161f相對於第六電漿調整桿（170f, 175f）的第六EM調整部175f移動163f一第六EM調整距離177f。該第六控制組件160f和該第六電漿調整板161f可用以將自第六EM耦合區域162f耦合至第六電漿調整桿（170f, 175f）的第六EM調整部175f之微波能量予以最佳化。舉例來說，第六EM調整距離177f可建立於第二EM能量調整空間169b內之第六EM調整部175f和第六電漿調整板161f之間，且第六EM調整距離177f可變化於約0.01 mm到約1 mm。The sixth plasma adjustment plate 161f may include a dielectric material and may be coupled to the sixth control component 160f, which may be used to compare the sixth plasma adjustment plate 161f with respect to the sixth electricity within the second EM energy adjustment space 169b. The sixth EM adjustment portion 175f of the slurry adjustment lever (170f, 175f) moves 163f to a sixth EM adjustment distance 177f. The sixth control unit 160f and the sixth plasma adjusting plate 161f can be used to couple the microwave energy of the sixth EM adjusting portion 175f coupled from the sixth EM coupling region 162f to the sixth plasma adjusting rod (170f, 175f). Jiahua. For example, the sixth EM adjustment distance 177f may be established between the sixth EM adjustment portion 175f and the sixth plasma adjustment plate 161f in the second EM energy adjustment space 169b, and the sixth EM adjustment distance 177f may vary from about From 0.01 mm to about 1 mm.

第六電漿調整桿（170f, 175f）可具有與其相關聯的第六直徑（d_1f ），且第六直徑（d_1f ）可變化於約0.01 mm到約1 mm。第六電漿調整板161f可具有與其相關聯的第六直徑（D_1f ），且第六直徑（D_1f ）可變化於約1 mm到約10 mm。第六EM耦合區域162f、第六控制組件160f、及第六電漿調整板161f可具有與其相關聯的第六x/y平面偏移（x_1f ），且第六x/y平面偏移（x_1f ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第六控制組件160f可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1f ）。The sixth plasma adjustment rod (170f, 175f) may have a sixth diameter (d _1f ) associated therewith, and the sixth diameter (d _1f ) may vary from about 0.01 mm to about 1 mm. The sixth plasma conditioning plate 161f can have a sixth diameter (D _1f ) associated therewith, and the sixth diameter (D _1f ) can vary from about 1 mm to about 10 mm. The sixth EM coupling region 162f, the sixth control component 160f, and the sixth plasma adjustment plate 161f may have a sixth x/y plane offset (x _1f ) associated therewith, and a sixth x/y plane offset ( x _1f ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The sixth control assembly 160f can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1f ) from about 1 mm to about 5 mm.

第七電漿調整桿（170g, 175g）可包含介電材料，且可具有第七電漿調整部170g，其可於利用（x_2g ）加以定義的第七位置延伸第七電漿調整距離171g進入製程空間115。第七電漿調整距離171g可變化於約10 mm到約400 mm。The seventh plasma adjustment rod (170g, 175g) may comprise a dielectric material, and may have a seventh plasma adjustment portion 170g that may extend the seventh plasma adjustment distance 171g at a seventh position defined by (x _2g ) Enter the process space 115. The seventh plasma adjustment distance 171g can vary from about 10 mm to about 400 mm.

第七EM耦合區域162g可在建立於第二腔組件168b之中的第二EM能量調整空間169b之內於由第一腔壁165b之第七EM耦合距離176g處加以建立，並且第七EM調整部175g可延伸進入第七EM耦合區域162g。第七EM調整部175g可自第七EM耦合區域162g取得第七微波能量，且第七微波能量可利用第七電漿調整部170g於第七位置（x_2g ）傳送至製程空間115。第七EM耦合區域162g可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第七EM耦合距離176g可變化於約0.01 mm到約10 mm，並且第七EM耦合距離176g可為波長相依且可變化於約（λ/4）到約（10λ）。The seventh EM coupling region 162g may be established within the second EM energy adjustment space 169b established in the second cavity assembly 168b at a seventh EM coupling distance 176g by the first cavity wall 165b, and the seventh EM adjustment Portion 175g can extend into the seventh EM coupling region 162g. The seventh EM adjusting portion 175g can obtain the seventh microwave energy from the seventh EM coupling region 162g, and the seventh microwave energy can be transmitted to the processing space 115 at the seventh position (x _2g ) by the seventh plasma adjusting portion 170g. The seventh EM coupling region 162g can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the seventh EM coupling distance 176g can vary from about 0.01 mm to about 10 mm, and the seventh EM coupling distance 176g can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第七電漿調整板161g可包含介電材料，且可連結至第七控制組件160g，其可用以在第二EM能量調整空間169b之內將該第七電漿調整板161g相對於第七電漿調整桿（170g, 175g）的第七EM調整部175g移動163g一第七EM調整距離177g。該第七控制組件160g和該第七電漿調整板161g可用以將自第七EM耦合區域162g耦合至第七電漿調整桿（170g, 175g）的第七EM調整部175g之微波能量予以最佳化。舉例來說，第七EM調整距離177g可建立於第二EM能量調整空間169b內之第七EM調整部175g和第七電漿調整板161g之間，且第七EM調整距離177g可變化於約0.01 mm到約1 mm。The seventh plasma adjusting plate 161g may include a dielectric material and may be coupled to the seventh control component 160g, which may be used to compare the seventh plasma adjusting plate 161g with respect to the seventh power within the second EM energy adjusting space 169b. The seventh EM adjustment portion 175g of the slurry adjustment rod (170 g, 175 g) moves 163 g to a seventh EM adjustment distance 177 g. The seventh control unit 160g and the seventh plasma adjusting plate 161g can be used to couple the microwave energy of the seventh EM adjusting portion 175g coupled from the seventh EM coupling region 162g to the seventh plasma adjusting rod (170g, 175g). Jiahua. For example, the seventh EM adjustment distance 177g may be established between the seventh EM adjustment portion 175g and the seventh plasma adjustment plate 161g in the second EM energy adjustment space 169b, and the seventh EM adjustment distance 177g may vary from about From 0.01 mm to about 1 mm.

第七電漿調整桿（170g, 175g）可具有與其相關聯的第七直徑（d_1g ），且第七直徑（d_1g ）可變化於約0.01 mm到約1 mm。第七電漿調整板161g可具有與其相關聯的第七直徑（D_1g ），且第七直徑（D_1g ）可變化於約1 mm到約10 mm。第七EM耦合區域162g、第七控制組件160g、及第七電漿調整板161g可具有與其相關聯的第七x/y平面偏移（x_1g ），且第七x/y平面偏移（x_1g ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第七控制組件160g可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1g ）。The seventh plasma adjustment rod (170 g, 175 g) can have a seventh diameter (d _1g ) associated therewith, and the seventh diameter (d _1g ) can vary from about 0.01 mm to about 1 mm. The seventh plasma conditioning plate 161g can have a seventh diameter (D _1g ) associated therewith, and the seventh diameter (D _1g ) can vary from about 1 mm to about 10 mm. The seventh EM coupling region 162g, the seventh control component 160g, and the seventh plasma adjustment plate 161g may have a seventh x/y plane offset (x _1g ) associated therewith, and a seventh x/y plane offset ( x _1g ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The seventh control assembly 160g can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1g ) from about 1 mm to about 5 mm.

第八電漿調整桿（170h, 175h）可包含介電材料，且可具有第八電漿調整部170h，其可於利用（x_2h ）加以定義的第八位置延伸第八電漿調整距離171h進入製程空間115。第八電漿調整距離171h可變化於約10 mm到約400 mm。The eighth plasma adjustment rod (170h, 175h) may include a dielectric material, and may have an eighth plasma adjustment portion 170h that may extend the eighth plasma adjustment distance 171h at the eighth position defined by (x _2h ) Enter the process space 115. The eighth plasma adjustment distance 171h can vary from about 10 mm to about 400 mm.

第八EM耦合區域162h可在建立於第二腔組件168b之中的第二EM能量調整空間169b之內於由第一腔壁165b之第八EM耦合距離176h處加以建立，並且第八EM調整部175h可延伸進入第八EM耦合區域162h。第八EM調整部175h可自第八EM耦合區域162h取得第八微波能量，且第八微波能量可利用第八電漿調整部170h於第八位置（x_2h ）傳送至製程空間115。第八EM耦合區域162h可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第八EM耦合距離176h可變化於約0.01 mm到約10 mm，並且第八EM耦合距離176h可為波長相依且可變化於約（λ/4）到約（10λ）。The eighth EM coupling region 162h can be established within the second EM energy adjustment space 169b established in the second cavity assembly 168b at the eighth EM coupling distance 176h of the first cavity wall 165b, and the eighth EM adjustment Portion 175h can extend into the eighth EM coupling region 162h. The eighth EM adjusting portion 175h can obtain the eighth microwave energy from the eighth EM coupling region 162h, and the eighth microwave energy can be transmitted to the processing space 115 at the eighth position (x _2h ) by the eighth plasma adjusting portion 170h. The eighth EM coupling region 162h can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the eighth EM coupling distance 176h can vary from about 0.01 mm to about 10 mm, and the eighth EM coupling distance 176h can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第八電漿調整板161h可包含介電材料，且可連結至第八控制組件160h，其可用以在第二EM能量調整空間169b之內將該第八電漿調整板161h相對於第八電漿調整桿（170h, 175h）的第八EM調整部175h移動163h一第八EM調整距離177h。該第八控制組件160h和該第八電漿調整板161h可用以將自第八EM耦合區域162h耦合至第八電漿調整桿（170h, 175h）的第八EM調整部175h之微波能量予以最佳化。第八EM調整距離177h可建立於第二EM能量調整空間169b內之第八EM調整部175h和第八電漿調整板161h之間，且第八EM調整距離177h可變化於約0.01 mm到約1 mm。The eighth plasma adjustment plate 161h may include a dielectric material and may be coupled to the eighth control component 160h, which may be used to compare the eighth plasma adjustment plate 161h with respect to the eighth power within the second EM energy adjustment space 169b. The eighth EM adjustment portion 175h of the slurry adjustment lever (170h, 175h) moves 163h to an eighth EM adjustment distance 177h. The eighth control component 160h and the eighth plasma adjustment plate 161h can be used to couple the microwave energy of the eighth EM adjustment portion 175h coupled from the eighth EM coupling region 162h to the eighth plasma adjustment lever (170h, 175h). Jiahua. The eighth EM adjustment distance 177h may be established between the eighth EM adjustment portion 175h and the eighth plasma adjustment plate 161h in the second EM energy adjustment space 169b, and the eighth EM adjustment distance 177h may vary from about 0.01 mm to about 1 mm.

第八電漿調整桿（170h, 175h）可具有與其相關聯的第八直徑（d_1h ），且第八直徑（d_1h ）可變化於約0.01 mm到約1 mm。第八電漿調整板161h可具有與其相關聯的第八直徑（D_1h ），且第八直徑（D1h）可變化於約1 mm到約10 mm。第八EM耦合區域162h、第八控制組件160h、及第八電漿調整板161h可具有與其相關聯的第八x/y平面偏移（x_1h ），且第八x/y平面偏移（x_1h ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第八控制組件160h可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1h ）。The eighth plasma adjustment rod (170h, 175h) may have an eighth diameter (d _1h ) associated therewith, and the eighth diameter (d _1h ) may vary from about 0.01 mm to about 1 mm. Plasma eighth adjustment plate 161h may have associated therewith an eighth the diameter (D _1h), and an eighth diameter (D1 h) may vary from about 1 mm to about 10 mm. The eighth EM coupling region 162h, the eighth control component 160h, and the eighth plasma conditioning plate 161h may have an eighth x/y plane offset (x _1h ) associated therewith, and an eighth x/y plane offset ( x _1h ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The eighth control assembly 160h can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1h ) from about 1 mm to about 5 mm.

第九電漿調整桿（170i, 175i）可包含介電材料，且可具有第九電漿調整部170i，其可於利用（x_2i ）加以定義的第九位置延伸第九電漿調整距離171i進入製程空間115。舉例來說，第九電漿調整距離171i可變化於約10 mm到約400 mm。The ninth plasma adjustment rod (170i, 175i) may include a dielectric material, and may have a ninth plasma adjustment portion 170i that may extend the ninth plasma adjustment distance 171i at a ninth position defined by (x _2i ) Enter the process space 115. For example, the ninth plasma adjustment distance 171i can vary from about 10 mm to about 400 mm.

第九EM耦合區域162i可在建立於第二腔組件168b之中的第二EM能量調整空間169b之內於由第一腔壁165b之第九EM耦合距離176i處加以建立，並且第九EM調整部175i可延伸進入第九EM耦合區域162i。第九EM調整部175i可自第九EM耦合區域162i取得第九微波能量，且第九微波能量可利用第九電漿調整部170i於第九位置（x_2i ）傳送至製程空間115。第九EM耦合區域162i可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第九EM耦合距離176i可變化於約0.01 mm到約10 mm，並且第九EM耦合距離176i可為波長相依且可變化於約（λ/4）到約（10λ）。The ninth EM coupling region 162i can be established within the second EM energy adjustment space 169b established in the second cavity assembly 168b at the ninth EM coupling distance 176i of the first cavity wall 165b, and the ninth EM adjustment Portion 175i can extend into ninth EM coupling region 162i. The ninth EM adjusting portion 175i may obtain the ninth microwave energy from the ninth EM coupling region 162i, and the ninth microwave energy may be transmitted to the processing space 115 at the ninth position (x _2i ) by the ninth plasma adjusting portion 170i. The ninth EM coupling region 162i can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the ninth EM coupling distance 176i can vary from about 0.01 mm to about 10 mm, and the ninth EM coupling distance 176i can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第九電漿調整板161i可包含介電材料，且可連結至第九控制組件160i，其可用以在第二EM能量調整空間169b之內將該第九電漿調整板161i相對於第九電漿調整桿（170i, 175i）的第九EM調整部175i移動163i一第九EM調整距離177i。該第九控制組件160i和該第九電漿調整板161i可用以將自第九EM耦合區域162i耦合至第九電漿調整桿（170i, 175i）的第九EM調整部175i之微波能量予以最佳化。舉例來說，第九EM調整距離177i可建立於第二EM能量調整空間169b內之第九EM調整部175i和第九電漿調整板161i之間，且第九EM調整距離177i可變化於約0.01 mm到約1 mm。The ninth plasma adjustment plate 161i may include a dielectric material and may be coupled to the ninth control component 160i, which may be used to compare the ninth plasma adjustment plate 161i with respect to the ninth electricity within the second EM energy adjustment space 169b. The ninth EM adjustment portion 175i of the slurry adjustment lever (170i, 175i) moves 163i to a ninth EM adjustment distance 177i. The ninth control unit 160i and the ninth plasma adjusting plate 161i can be used to couple the microwave energy of the ninth EM adjusting portion 175i coupled from the ninth EM coupling region 162i to the ninth plasma adjusting lever (170i, 175i). Jiahua. For example, the ninth EM adjustment distance 177i may be established between the ninth EM adjustment portion 175i and the ninth plasma adjustment plate 161i in the second EM energy adjustment space 169b, and the ninth EM adjustment distance 177i may vary from about From 0.01 mm to about 1 mm.

第九電漿調整桿（170i, 175i）可具有與其相關聯的第九直徑（d_1i ），且第九直徑（d_1i ）可變化於約0.01 mm到約1 mm。第九電漿調整板161i可具有與其相關聯的第九直徑（D_1i ），且第九直徑（D_1i ）可變化於約1 mm到約10 mm。第九EM耦合區域162i、第九控制組件160i、及第九電漿調整板161i可具有與其相關聯的第九x/y平面偏移（x_1i ），且第九x/y平面偏移（x_1i ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第九控制組件160i可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1i ）。The ninth plasma adjustment rod (170i, 175i) may have a ninth diameter (d _1i ) associated therewith, and the ninth diameter (d _1i ) may vary from about 0.01 mm to about 1 mm. The ninth plasma adjustment plate 161i may have a ninth diameter (D _1i ) associated therewith, and the ninth diameter (D _1i ) may vary from about 1 mm to about 10 mm. The ninth EM coupling region 162i, the ninth control component 160i, and the ninth plasma conditioning plate 161i may have a ninth x/y plane offset (x _1i ) associated therewith, and a ninth x/y plane offset ( x _1i ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The ninth control assembly 160i can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1i ) from about 1 mm to about 5 mm.

第十電漿調整桿（170j, 175j）可包含介電材料，且可具有第十電漿調整部170j，其可於利用（x_2j ）加以定義的第十位置延伸第十電漿調整距離171j進入製程空間115。舉例來說，第十電漿調整距離171j可變化於約10 mm到約400 mm。The tenth plasma adjusting rod (170j, 175j) may comprise a dielectric material, and may have a tenth plasma adjusting portion 170j, which may extend the tenth plasma adjusting distance 171j at the tenth position defined by (x _2j ) Enter the process space 115. For example, the tenth plasma adjustment distance 171j can vary from about 10 mm to about 400 mm.

第十EM耦合區域162j可在建立於第二腔組件168b之中的第二EM能量調整空間169b之內於由第一腔壁165b之第十EM耦合距離176j處加以建立，並且第十EM調整部175j可延伸進入第十EM耦合區域162j。第十EM調整部175j可自第十EM耦合區域162j取得第十微波能量，且第十微波能量可利用第十電漿調整部170j於第十位置（x_2j ）傳送至製程空間115。第十EM耦合區域162j可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第十EM耦合距離176j可變化於約0.01 mm到約10 mm，並且第十EM耦合距離176j可為波長相依且可變化於約（λ/4）到約（10λ）。The tenth EM coupling region 162j can be established within the second EM energy adjustment space 169b established in the second cavity assembly 168b at the tenth EM coupling distance 176j of the first cavity wall 165b, and the tenth EM adjustment Portion 175j can extend into the tenth EM coupling region 162j. The tenth EM adjusting portion 175j can obtain the tenth microwave energy from the tenth EM coupling region 162j, and the tenth microwave energy can be transmitted to the processing space 115 at the tenth position (x _2j ) by the tenth plasma adjusting portion 170j. The tenth EM coupling region 162j can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the tenth EM coupling distance 176j can vary from about 0.01 mm to about 10 mm, and the tenth EM coupling distance 176j can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第十電漿調整板161j可包含介電材料，且可連結至第十控制組件160j，其可用以在第二EM能量調整空間169b之內將該第十電漿調整板161j相對於第十電漿調整桿（170j, 175j）的第十EM調整部175j移動163j一第十EM調整距離177j。該第十控制組件160j和該第十電漿調整板161j可用以將自第十EM耦合區域162j耦合至第十電漿調整桿（170j, 175j）的第十EM調整部175j之微波能量予以最佳化。舉例來說，第十EM調整距離177j可建立於第二EM能量調整空間169b內之第十EM調整部175j和第十電漿調整板161j之間，且第十EM調整距離177j可變化於約0.01 mm到約1 mm。The tenth plasma adjusting plate 161j may include a dielectric material and may be coupled to the tenth control component 160j, which may be used to compare the tenth plasma adjusting plate 161j with respect to the tenth electric within the second EM energy adjusting space 169b. The tenth EM adjustment portion 175j of the slurry adjustment lever (170j, 175j) moves 163j to a tenth EM adjustment distance 177j. The tenth control unit 160j and the tenth plasma adjusting plate 161j can be used to couple the microwave energy of the tenth EM adjusting portion 175j coupled from the tenth EM coupling region 162j to the tenth plasma adjusting rod (170j, 175j). Jiahua. For example, the tenth EM adjustment distance 177j may be established between the tenth EM adjustment portion 175j and the tenth plasma adjustment plate 161j in the second EM energy adjustment space 169b, and the tenth EM adjustment distance 177j may vary from about From 0.01 mm to about 1 mm.

第十電漿調整桿（170j, 175j）可具有與其相關聯的第十直徑（d_1j ），且第十直徑（d_1j ）可變化於約0.01 mm到約1 mm。第十電漿調整板161j可具有與其相關聯的第十直徑（D_1j ），且第十直徑（D_1j ）可變化於約1 mm到約10 mm。第十EM耦合區域162j、第十控制組件160j、及第十電漿調整板161j可具有與其相關聯的第十x/y平面偏移（x_1j ），且第十x/y平面偏移（x_1j ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第十控制組件160j可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1j ）。The tenth plasma adjustment rod (170j, 175j) may have a tenth diameter (d _1j ) associated therewith, and the tenth diameter (d _1j ) may vary from about 0.01 mm to about 1 mm. The tenth plasma adjustment plate 161j may have a tenth diameter (D _1j ) associated therewith, and the tenth diameter (D _1j ) may vary from about 1 mm to about 10 mm. The tenth EM coupling region 162j, the tenth control component 160j, and the tenth plasma conditioning plate 161j may have a tenth x/y plane offset (x _1j ) associated therewith, and a tenth x/y plane offset ( x _1j ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The tenth control assembly 160j can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1j ) from about 1 mm to about 5 mm.

第一微波處理系統100的俯視圖包含第一腔控制組件145a的俯視圖，其被顯示連結第一腔調整板146a的俯視圖。第一腔控制組件145a可包含介電材料，且可具有與其相關聯的第一直徑（d_1aa ），且該第一直徑（d_1aa ）可變化於約0.01 mm到約1 mm。第一腔調整板146a可包含介電材料，且可具有與其相關聯的第二直徑（D_1aa ），且該第二直徑（D_1aa ）可變化於約1 mm到約10 mm。第一腔控制組件145a和第一腔調整板146a可具有與其相關聯的第一x/y平面偏移（y_1aa ），其可變化於約1 mm到約10 mm。在此實施例和所有後續的實施例中，吾人可明白所設置的尺寸可與所記載的不同，舉例來說，該腔控制組件和腔調整板的直徑可分別上達10 mm以上和上達80 mm以上。The top view of the first microwave processing system 100 includes a top view of the first chamber control assembly 145a that is shown in a top view that joins the first chamber adjustment plate 146a. The first cavity control assembly 145a can comprise a dielectric material and can have a first diameter (d _1aa ) associated therewith, and the first diameter (d _1aa ) can vary from about 0.01 mm to about 1 mm. The first chamber adjustment plate 146a can comprise a dielectric material and can have a second diameter (D _1aa ) associated therewith, and the second diameter (D _1aa ) can vary from about 1 mm to about 10 mm. The first cavity control assembly 145a and the first cavity adjustment plate 146a can have a first x/y plane offset (y _1aa ) associated therewith that can vary from about 1 mm to about 10 mm. In this and all subsequent embodiments, it will be appreciated that the dimensions provided may differ from those described, for example, the cavity control assembly and the chamber adjustment plate may each have a diameter of up to 10 mm and up to 80 mm, respectively. the above.

此外，第一微波處理系統100的俯視圖包含第二腔控制組件145b的俯視圖，其被顯示連結第二腔調整板146b的俯視圖。第二腔控制組件145b可包含介電材料，且可具有與其相關聯的第一額外直徑（d_1ba ），且該第一額外直徑（d_1ba ）可變化於約0.01 mm到約1 mm。第二腔調整板146b可具有與其相關聯的第二額外直徑（D_1ba ），且該第二額外直徑（D_1ba ）可變化於約1 mm到約10 mm。第二腔控制組件145b和第二腔調整板146b可包含介電材料，且可具有與其相關聯的第二x/y平面偏移（y_1ba ），且第二x/y平面偏移（y_1ba ）可變化於約1 mm到約10 mm。Additionally, the top view of the first microwave processing system 100 includes a top view of the second chamber control assembly 145b that is shown in a top view that joins the second chamber adjustment plate 146b. The second cavity control assembly 145b can comprise a dielectric material and can have a first additional diameter (d _1ba ) associated therewith, and the first additional diameter (d _1ba ) can vary from about 0.01 mm to about 1 mm. The second chamber adjustment plate 146b can have a second additional diameter (D _1ba ) associated therewith, and the second additional diameter (D _1ba ) can vary from about 1 mm to about 10 mm. The second cavity control assembly 145b and the second cavity adjustment plate 146b can comprise a dielectric material and can have a second x/y plane offset (y _1ba ) associated therewith, and a second x/y plane offset (y _1ba ) can vary from about 1 mm to about 10 mm.

圖1B顯示在第一微波處理系統100之中製程腔室110的局部切開前視圖。該前視圖顯示互相連結的複數額外的壁112的x/z平面視圖，藉此建立在製程腔室110之中的製程空間115的局部切開前視圖。第一微波處理系統100可建構成用以在製程空間115之中形成電漿。FIG. 1B shows a partially cutaway front view of the process chamber 110 in the first microwave processing system 100. The front view shows an x/z plan view of the plurality of additional walls 112 interconnected, thereby establishing a partially cut front view of the process space 115 in the process chamber 110. The first microwave processing system 100 can be configured to form a plasma in the process space 115.

該前視圖顯示具有第一EM能量調整空間169a於其中的第一腔組件168a的切開圖，且第一腔組件168a可包含第一腔壁165a、第二腔壁166a、至少一個第三腔壁167a、及一個以上的額外腔壁（未顯示）。舉例而言，第一腔組件168a可利用第一腔壁165a連結至第一介面組件112a。該前視圖亦顯示具有第二EM能量調整空間169b於其中的第二腔組件168b的切開視圖，且該第二腔組件168b可包含第一腔壁165b、第二腔壁166b、至少一個第三腔壁167b、及一個以上額外的腔壁（未顯示）。舉例來說，第二腔組件168b可利用第一腔壁165b連結至第二介面組件112b。The front view shows a cutaway view of the first chamber assembly 168a having the first EM energy adjustment space 169a therein, and the first chamber assembly 168a can include a first chamber wall 165a, a second chamber wall 166a, and at least one third chamber wall 167a, and more than one additional lumen wall (not shown). For example, the first cavity component 168a can be coupled to the first interface component 112a using the first cavity wall 165a. The front view also shows a cutaway view of the second chamber assembly 168b having the second EM energy adjustment space 169b therein, and the second chamber assembly 168b can include a first chamber wall 165b, a second chamber wall 166b, at least a third Cavity wall 167b, and more than one additional lumen wall (not shown). For example, the second chamber assembly 168b can be coupled to the second interface assembly 112b using the first lumen wall 165b.

在圖1B中顯示第一組電漿調整桿（170a-170e）的局部前視圖（虛線視圖）、第一組電漿調整板（161a-161e）的局部前視圖（虛線視圖）、第二組電漿調整桿（170f-170j）的局部前視圖（虛線視圖）、及第二組電漿調整板（161f-161j）的局部前視圖（虛線視圖）。A partial front view (dashed view) of the first set of plasma adjustment bars (170a-170e), a partial front view (dashed view) of the first set of plasma adjustment plates (161a-161e), a second set are shown in FIG. 1B. A partial front view (dashed view) of the plasma adjustment rods (170f-170j) and a partial front view (dashed view) of the second set of plasma adjustment plates (161f-161j).

第一組電漿調整桿（170a-170e）與第一組電漿調整板（161a-161e）可具有與其相關聯的第一組x/y平面偏移（x_2a-e ），且該第一組x/y平面偏移（x_2a-e ）可變化於約10 mm到約100 mm。第一組電漿調整桿（170a-170e）與第一組電漿調整板（161a-161e）可具有與其相關聯的第一組x/z平面偏移（z_1a-e ），且該第一組x/z平面偏移（z_1a-e ）可變化於約100 mm到約400 mm。The first set of plasma adjustment rods (170a-170e) and the first set of plasma adjustment plates (161a-161e) can have a first set of x/y plane offsets (x _2a-e ) associated therewith, and the A set of x/y plane offsets (x _2a-e ) can vary from about 10 mm to about 100 mm. The first set of plasma adjustment rods (170a-170e) and the first set of plasma adjustment plates (161a-161e) can have a first set of x/z plane offsets (z _1a-e ) associated therewith, and the A set of x/z plane offsets (z _1a-e ) can vary from about 100 mm to about 400 mm.

第二組電漿調整桿（170f-170j）與第二組電漿調整板（161f-161j）可具有與其相關聯的第二組x/y平面偏移（x_2f-j ），且該第二組x/y平面偏移（x_2f-j ）可變化於約10 mm到約100 mm。第二組電漿調整桿（170f-170j）與第二組電漿調整板（161f-161j）可具有與其相關聯的第二組x/z平面偏移（z_1f-j ），且該第二組x/z平面偏移（z_1f-j ）可變化於約100 mm到約400 mm。The second set of plasma adjustment rods (170f-170j) and the second set of plasma adjustment plates (161f-161j) may have a second set of x/y plane offsets (x _2f-j ) associated therewith, and the The two sets of x/y plane offsets (x _2f-j ) can vary from about 10 mm to about 100 mm. The second set of plasma adjustment rods (170f-170j) and the second set of plasma adjustment plates (161f-161j) may have a second set of x/z plane offsets (z _1f-j ) associated therewith, and the The two sets of x/z plane offsets (z _1f-j ) can vary from about 100 mm to about 400 mm.

圖1B顯示第一微波處理系統100可包含連結至腔室壁112的一個以上電漿感測器106，以取得第一電漿資料。此外，第一微波處理系統100可建構成用以處理200 mm基板、300 mm基板、或更大尺寸的基板。此外，可分別配置圓柱形、正方形和矩形腔室，使得第一微波處理系統100可建構成用以處理圓形、正方形或矩形的基板、晶圓、或LCD，無論其為熟習此技藝者所知的何種尺寸。因此，雖然將就半導體基板的處理對本發明的實施態樣加以描述，但本發明係不僅限定於此。FIG. 1B shows that the first microwave processing system 100 can include more than one plasma sensor 106 coupled to the chamber wall 112 to obtain first plasma data. Additionally, the first microwave processing system 100 can be constructed to process a 200 mm substrate, a 300 mm substrate, or a larger sized substrate. In addition, cylindrical, square, and rectangular chambers can be separately configured such that the first microwave processing system 100 can be constructed to process a circular, square, or rectangular substrate, wafer, or LCD, whether it is familiar to those skilled in the art. Know which size. Therefore, although the embodiment of the present invention will be described with respect to the processing of the semiconductor substrate, the present invention is not limited thereto.

如圖1B所示，第一EM來源150a可連結至第一腔組件168a，且第二EM來源150b可連結至第二腔組件168b。第一EM來源150a可連結至第一匹配網路152a，且第一匹配網路152a可連結至第一耦合網路154a。第二EM來源150b可連結至第二匹配網路152b，且第二匹配網路152b可連結至第二耦合網路154b。或者是，可使用複數匹配網路（未顯示）或複數耦合網路（未顯示）。As shown in FIG. 1B, the first EM source 150a can be coupled to the first chamber assembly 168a and the second EM source 150b can be coupled to the second chamber assembly 168b. The first EM source 150a can be coupled to the first matching network 152a, and the first matching network 152a can be coupled to the first coupling network 154a. The second EM source 150b can be coupled to the second matching network 152b, and the second matching network 152b can be coupled to the second coupling network 154b. Alternatively, a complex matching network (not shown) or a complex coupling network (not shown) may be used.

第一耦合網路154a可被可移除自如地連結至第一腔組件168a，而第一腔組件168a可被可移除自如地連結至製程腔室110的第一介面組件112a的上部。第一耦合網路154a可用以在第一腔組件168a之中提供微波能量至第一EM能量調整空間169a。第二耦合網路154b可被可移除自如地連結至第二腔組件168b，而第二腔組件168b可被可移除自如地連結至製程腔室110的第二介面組件112b的上部。第二耦合網路154b可用以在第二腔組件168b之中提供額外的微波能量至第二EM能量調整空間169b。或者，可使用其他的EM耦合構造。The first coupling network 154a can be removably coupled to the first cavity assembly 168a, and the first cavity assembly 168a can be removably coupled to the upper portion of the first interface component 112a of the process chamber 110. The first coupling network 154a can be used to provide microwave energy to the first EM energy conditioning space 169a within the first cavity assembly 168a. The second coupling network 154b can be removably coupled to the second chamber assembly 168b, and the second chamber assembly 168b can be removably coupled to the upper portion of the second interface assembly 112b of the process chamber 110. The second coupling network 154b can be used to provide additional microwave energy to the second EM energy conditioning space 169b within the second cavity assembly 168b. Alternatively, other EM coupling configurations can be used.

如圖1B所示，控制器195可連結196至EM來源（150a、150b）、匹配網路（152a、152b）、耦合網路（154a、154b）、及腔組件（168a、168b），並且控制器195可利用製程配方以建立、控制、及最佳化EM來源（150a、150b）、匹配網路（152a、152b）、耦合網路（154a、154b）、及腔組件（168a、168b），以控制在製程空間115之內的電漿均勻性。舉例而言，EM來源（150a、150b）可操作於從約500 MHz到約5000 MHz的頻率。此外，控制器195可連結196至電漿感測器106和製程感測器107，並且控制器195可利用製程配方來建立、控制、和最佳化來自電漿感測器106和製程感測器107的資料，以控制在製程空間115之內的電漿均勻性。As shown in FIG. 1B, controller 195 can interface 196 to EM sources (150a, 150b), matching networks (152a, 152b), coupling networks (154a, 154b), and cavity components (168a, 168b), and control The processor 195 can utilize process recipes to establish, control, and optimize EM sources (150a, 150b), matching networks (152a, 152b), coupling networks (154a, 154b), and cavity components (168a, 168b), To control plasma uniformity within the process space 115. For example, the EM source (150a, 150b) can operate from a frequency of from about 500 MHz to about 5000 MHz. In addition, controller 195 can couple 196 to plasma sensor 106 and process sensor 107, and controller 195 can utilize process recipes to establish, control, and optimize from plasma sensor 106 and process sensing. The data of the device 107 is used to control the plasma uniformity within the process space 115.

此外，控制器195可連結196至氣體供給系統140、氣體供給次組件141、及氣體噴淋頭143。舉例而言，氣體供給系統140、氣體供給次組件141、及氣體噴淋頭143可建構成用以將一種以上製程氣體導入製程空間115，且可包含流量控制和/或流量量測元件。Further, the controller 195 can connect 196 to the gas supply system 140, the gas supply subassembly 141, and the gas showerhead 143. For example, gas supply system 140, gas supply subassembly 141, and gas showerhead 143 can be configured to direct more than one process gas into process space 115, and can include flow control and/or flow measurement elements.

在乾式電漿蝕刻期間，製程氣體可包含蝕刻劑、鈍化劑（passivant）、或惰性氣體、或其二者以上的組合。舉例而言，當電漿蝕刻例如矽氧化物（SiO_x ）或矽氮化物（Si_x N_y ）之介電膜時，電漿蝕刻氣體成份通常包含氟碳基化學品（C_x F_y ），例如C₄ F₈ 、C₅ F₈ 、C₃ F₆ 、C₄ F₆ 、CF₄ 等其中至少一者，且/或可包含氟烴基化學品（C_x H_y F_z ），例如CHF₃ 、CH₂ F₂ 等其中至少一者，且可具有惰性氣體、氧、CO、或CO₂ 其中至少一者。此外，舉例來說，當蝕刻多晶矽之時，電漿蝕刻氣體成份一般包含含鹵素氣體，例如HBr、Cl₂ 、NF₃ 、或SF₆ 、或其二者以上組合，且可包含氟烴基化學品（C_x H_y F_z ），例如CHF₃ 、CH₂ F₂ 等其中至少一者，及惰性氣體、氧、CO、或CO₂ 其中至少一者、或其二者以上。在電漿輔助沉積期間，製程氣體可包含膜形成前驅物、還原氣體、或惰性氣體、或其二者以上之組合。During dry plasma etching, the process gas may comprise an etchant, a passivant, or an inert gas, or a combination of two or more thereof. For example, when a plasma etches a dielectric film such as tantalum oxide (SiO _x ) or tantalum nitride (Si _x N _y ), the plasma etching gas component usually contains a fluorocarbon-based chemical (C _x F _y ). For example, at least one of C ₄ F ₈ , C ₅ F ₈ , C ₃ F ₆ , C ₄ F ₆ , CF _{4 ,} etc., and/or may comprise a fluorocarbon based chemical (C _x H _y F _z ), such as CHF ₃ , at least one of CH ₂ F ₂ and the like, and may have at least one of an inert gas, oxygen, CO, or CO ₂ . Further, for example, when etching a polysilicon, the plasma etching gas component generally comprises a halogen-containing gas such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or a combination of two or more thereof, and may include a fluorocarbon-based chemical. (C _x H _y F _z ), for example, at least one of CHF ₃ , CH ₂ F _{2 ,} and the like, and at least one of inert gas, oxygen, CO, or CO ₂ , or two or more thereof. During plasma assisted deposition, the process gas may comprise a film forming precursor, a reducing gas, or an inert gas, or a combination of two or more thereof.

如圖1B所示，第一微波處理系統100可包含壓力控制系統190及埠191，其連結至製程腔室110且建構成用以排空製程腔室110並控制製程腔室110之內的壓力。此外，第一微波處理系統100可包含基板固持器120，用於將基板105安裝於製程空間115之中。As shown in FIG. 1B, the first microwave processing system 100 can include a pressure control system 190 and a crucible 191 coupled to the process chamber 110 and configured to evacuate the process chamber 110 and control the pressure within the process chamber 110. . Additionally, the first microwave processing system 100 can include a substrate holder 120 for mounting the substrate 105 within the process space 115.

第一微波處理系統100的前視圖包含第一腔控制組件145a的局部前視圖，其被顯示連結至第一腔調整板146a的前視圖。第一腔控制組件145a和第一腔調整板146a可具有與其關聯的第一x/z平面偏移（z_1aa ），且該第一x/z平面偏移（z_1aa ）可變化於約1 mm到約10 mm。The front view of the first microwave processing system 100 includes a partial front view of the first cavity control assembly 145a that is shown coupled to the front view of the first cavity adjustment plate 146a. The first cavity control assembly 145a and the first cavity adjustment plate 146a can have a first x/z plane offset (z _1aa ) associated _therewith , and the first x/z plane offset (z _1aa ) can vary from about 1 Mm to about 10 mm.

第一腔控制組件145a可用以在第一EM能量調整空間169a之內移動147a第一腔調整板146a腔調整距離148a。控制器195可連結196至腔控制組件145a，且控制器195可使用製程配方來建立、控制、及最佳化腔調整距離148a，以即時控制和維持在製程空間115之內的電漿均勻性。舉例而言，腔調整距離148a可變化於約0.01 mm到約10 mm，且腔調整距離148a可為波長相依的，且可變化於約（λ/4）到約（10λ）。The first chamber control assembly 145a can be used to move 147a the first chamber adjustment plate 146a chamber adjustment distance 148a within the first EM energy adjustment space 169a. The controller 195 can be coupled 196 to the chamber control assembly 145a, and the controller 195 can use the process recipe to establish, control, and optimize the chamber adjustment distance 148a to instantly control and maintain plasma uniformity within the process space 115. . For example, the cavity adjustment distance 148a can vary from about 0.01 mm to about 10 mm, and the cavity adjustment distance 148a can be wavelength dependent and can vary from about (λ/4) to about (10λ).

此外，第一微波處理系統100的前視圖包含第二腔控制組件145b的局部前視圖，其被顯示連結至第二腔調整板146b的前視圖。第二腔控制組件145b和第二腔調整板146b可具有與其關聯的第二x/z平面偏移（z_1ba ），且該第二x/z平面偏移（z_1ba ）變化於約1 mm到約10 mm。Additionally, the front view of the first microwave processing system 100 includes a partial front view of the second cavity control assembly 145b that is shown coupled to the front view of the second cavity adjustment plate 146b. The second cavity control component 145b and the second cavity adjustment plate 146b can have a second x/z plane offset (z _1ba ) associated _therewith , and the second x/z plane offset (z _1ba ) varies by about 1 mm Up to about 10 mm.

第二腔控制組件145b可用以在第二EM能量調整空間169b之內移動147b第二腔調整板146b第二腔調整距離148b。控制器195可連結196至第二腔控制組件145b，且控制器195可使用製程配方來建立、控制、及最佳化第二腔調整距離148b，以即時控制和維持在製程空間115之內的電漿均勻性。舉例而言，第二腔調整距離148b可變化於約0.01 mm到約10 mm，且第二腔調整距離148b可為波長相依的，且可變化於約（λ/4）到約（10λ）。The second chamber control assembly 145b can be used to move 147b the second chamber adjustment plate 146b the second chamber adjustment distance 148b within the second EM energy adjustment space 169b. The controller 195 can be coupled 196 to the second chamber control assembly 145b, and the controller 195 can use the process recipe to establish, control, and optimize the second chamber adjustment distance 148b for immediate control and maintenance within the process space 115. Plasma uniformity. For example, the second cavity adjustment distance 148b can vary from about 0.01 mm to about 10 mm, and the second cavity adjustment distance 148b can be wavelength dependent and can vary from about (λ/4) to about (10λ).

圖1C顯示在第一微波處理系統100中製程腔室110的局部切開側視圖。該側視圖顯示連結至第一介面組件112a和第二介面組件112b的複數腔室壁112的y/z平面視圖，藉此建立在製程腔室110之中的製程空間115的局部切開y/z平面視圖。第一微波處理系統100可建構成用以在製程空間115之中形成均勻電漿。FIG. 1C shows a partial cutaway side view of process chamber 110 in first microwave processing system 100. The side view shows a y/z plan view of the plurality of chamber walls 112 joined to the first interface component 112a and the second interface component 112b, thereby establishing a partial cut y/z of the process space 115 in the process chamber 110. Plane view. The first microwave processing system 100 can be configured to form a uniform plasma within the process space 115.

在圖1C中顯示在第一腔組件168a中的第一EM能量調整空間169a的局部側視圖與在第二腔組件168b中的第二EM能量調整空間169b的局部側視圖。在圖1C中顯示第一組電漿調整桿（170a-170e）的局部側視圖、第一組電漿調整板（161a-161e）的局部側視圖、第二組電漿調整桿（170f-170j）的局部側視圖、及第二組電漿調整板（161f-161j）的局部側視圖。A partial side view of the first EM energy adjustment space 169a in the first chamber assembly 168a and a partial side view of the second EM energy adjustment space 169b in the second chamber assembly 168b are shown in FIG. 1C. A partial side view of the first set of plasma adjustment rods (170a-170e), a partial side view of the first set of plasma adjustment plates (161a-161e), and a second set of plasma adjustment rods (170f-170j) are shown in FIG. 1C. A partial side view of the) and a partial side view of the second set of plasma conditioning plates (161f-161j).

在圖1C中亦顯示第一組隔離組件（164a、164b、164c、164d、及164e）與第二組隔離組件（164f、164g、164h、164i、及164j）的側視圖。舉例來說，第一組隔離組件（164a、164b、164c、164d、及164e）可用以將第一組電漿調整桿﹛（170a、170b、170c、170d、及170e）和（175a、175b、175c、175d、及175e）﹜可移除自如地連結至第一介面組件112a。第一組隔離組件（164a、164b、164c、164d、及164e）每一者可被可移除自如地連結至第一介面組件112a。此外，第二組隔離組件（164f、164g、164h、164i、及164j）可用以將第二組電漿調整桿﹛（170f、170g、170h、170i、及170j）和（175f、175g、175h、175i、及175j）﹜可移除自如地連結至第二介面組件112b。第二組隔離組件（164f、164g、164h、164i、及164j）每一者可被可移除自如地連結至第二介面組件112b。A side view of the first set of isolation components (164a, 164b, 164c, 164d, and 164e) and the second set of isolation components (164f, 164g, 164h, 164i, and 164j) is also shown in FIG. 1C. For example, a first set of isolation components (164a, 164b, 164c, 164d, and 164e) can be used to set the first set of plasma adjustment rods {(170a, 170b, 170c, 170d, and 170e) and (175a, 175b, 175c, 175d, and 175e)} are removably coupled to the first interface component 112a. The first set of isolation components (164a, 164b, 164c, 164d, and 164e) can each be removably coupled to the first interface component 112a. In addition, a second set of isolation components (164f, 164g, 164h, 164i, and 164j) can be used to set the second set of plasma adjustment rods {(170f, 170g, 170h, 170i, and 170j) and (175f, 175g, 175h, 175i, and 175j)} are removably coupled to the second interface component 112b. The second set of isolation components (164f, 164g, 164h, 164i, and 164j) can each be removably coupled to the second interface component 112b.

如圖1C所示，第一組電漿調整板（161a、161b、161c、161d、及161e）可連結至第一組控制組件（160a、160b、160c、160d、及160e），且第一組控制組件（160a、160b、160c、160d、及160e）可用以在第一EM能量調整空間169a之內，將第一組電漿調整板（161a、161b、161c、161d、及161e）相對於EM調整部（175a、175b、175c、175d、及175e）移動（163a、163b、163c、163d、及163e）第一組EM調整距離（177a、177b、177c、177d、及177e）。此外，第二組電漿調整板（161f、161g、161h、161i、及161j）可連結至第二組控制組件（160f、160g、160h、160i、及160j），且第二組控制組件（160f、160g、160h、160i、及160j）可用以在第二EM能量調整空間169b之內，將第二組電漿調整板（161f、161g、161h、161i、及161j）相對於EM調整部（175f、175g、175h、175i、及175j）移動（163f、163g、163h、163i、及163j）第二組EM調整距離（177f、177g、177h、177i、及177j）。As shown in FIG. 1C, the first set of plasma adjustment plates (161a, 161b, 161c, 161d, and 161e) can be coupled to the first set of control components (160a, 160b, 160c, 160d, and 160e), and the first set Control components (160a, 160b, 160c, 160d, and 160e) may be used to move the first set of plasma conditioning plates (161a, 161b, 161c, 161d, and 161e) relative to the EM within the first EM energy conditioning space 169a The adjustment sections (175a, 175b, 175c, 175d, and 175e) move (163a, 163b, 163c, 163d, and 163e) the first set of EM adjustment distances (177a, 177b, 177c, 177d, and 177e). In addition, the second set of plasma adjustment plates (161f, 161g, 161h, 161i, and 161j) may be coupled to the second set of control components (160f, 160g, 160h, 160i, and 160j), and the second set of control components (160f) , 160g, 160h, 160i, and 160j) may be used to move the second set of plasma adjustment plates (161f, 161g, 161h, 161i, and 161j) relative to the EM adjustment portion (175f) within the second EM energy adjustment space 169b. , 175g, 175h, 175i, and 175j) move (163f, 163g, 163h, 163i, and 163j) the second set of EM adjustment distances (177f, 177g, 177h, 177i, and 177j).

第一組控制組件（160a、160b、160c、160d、及160e）可連結196至控制器195，且控制器195可使用製程配方來建立、控制、和最佳化第一組EM調整距離（177a、177b、177c、177d、及177e），以控制在製程空間115之內的電漿均勻性。此外，第二組控制組件（160f、160g、160h、160i、及160j）可連結196至控制器195，且控制器195可使用製程配方來建立、控制、和最佳化第二組EM調整距離（177f、177g、177h、177i、及177j），以控制在製程空間115之內的電漿均勻性。The first set of control components (160a, 160b, 160c, 160d, and 160e) can be coupled 196 to the controller 195, and the controller 195 can use the process recipe to establish, control, and optimize the first set of EM adjustment distances (177a) , 177b, 177c, 177d, and 177e) to control plasma uniformity within the process space 115. Additionally, a second set of control components (160f, 160g, 160h, 160i, and 160j) can be coupled 196 to the controller 195, and the controller 195 can use the process recipe to establish, control, and optimize the second set of EM adjustment distances. (177f, 177g, 177h, 177i, and 177j) to control plasma uniformity within the process space 115.

控制器195可連結196至EM來源（150a、150b）、匹配網路（152a、152b）、耦合網路（154a、154b）、及腔組件（168a、168b），且控制器195可利用製程配方來建立、控制、及最佳化EM來源（150a、150b）、匹配網路（152a、152b）、耦合網路（154a、154b）、及腔組件（168a、168b），以控制在製程空間115之內的電漿均勻性。舉例來說，EM來源（150a、150b）可操作於自約500 MHz到約5000 MHz之頻率。此外，控制器195可連結196至電漿感測器106、製程感測器107、及腔感測器（108a及108b），且控制器195可利用製程配方來建立、控制、及最佳化來自電漿感測器106、製程感測器107、及腔感測器（108a及108b）的資料，以控制在製程空間115之內的電漿均勻性。Controller 195 can couple 196 to EM sources (150a, 150b), matching networks (152a, 152b), coupling networks (154a, 154b), and cavity components (168a, 168b), and controller 195 can utilize process recipes To establish, control, and optimize EM sources (150a, 150b), matching networks (152a, 152b), coupling networks (154a, 154b), and cavity components (168a, 168b) for control in process space 115 Plasma uniformity within. For example, the EM source (150a, 150b) can operate at frequencies from about 500 MHz to about 5000 MHz. In addition, the controller 195 can connect 196 to the plasma sensor 106, the process sensor 107, and the cavity sensors (108a and 108b), and the controller 195 can be established, controlled, and optimized using the process recipe. Information from the plasma sensor 106, the process sensor 107, and the cavity sensors (108a and 108b) to control plasma uniformity within the process space 115.

該側視圖描述製程腔室110，其具有在y/z平面之與其相關聯的全寬（y_T ）和全高（z_T ）。該全寬（y_T ）可變化於約50 mm到約500 mm，且該全高（z_T ）可變化於約50 mm到約500 mm。This side view depicts the process chamber 110 having its full width (y _T ) and full height (z _T ) associated with it in the y/z plane. The full width (y _T ) can vary from about 50 mm to about 500 mm, and the full height (z _T ) can vary from about 50 mm to about 500 mm.

圖2A顯示在第二微波處理系統200中製程腔室210的局部切開俯視圖。該俯視圖顯示形成第二製程腔室210的第一介面組件212a、第二介面組件212b、及連結至第一介面組件212a和第二介面組件212b的複數額外的腔室壁212的x/y平面圖。舉例來說，腔室壁112可具有與其相關聯的壁厚度（t），且該壁厚度（t）可變化於約1 mm到約5 mm。第一介面組件212a可具有與其相關聯的第一介面厚度（t_i1 ），且該第一介面厚度（t_i1 ）可變化於約1 mm到約10 mm。第二介面組件212b可具有與其相關聯的第二介面厚度（t_i2 ），且該第二介面厚度（t_i2 ）可變化於約1 mm到約10 mm。製程空間215可具有與其相關聯的長度（x_T ），且該長度（x_T ）可變化於約10 mm到約500 mm。2A shows a partial cutaway plan view of process chamber 210 in second microwave processing system 200. The top view shows the x/y plan view of the first interface component 212a forming the second process chamber 210, the second interface component 212b, and the plurality of additional chamber walls 212 coupled to the first interface component 212a and the second interface component 212b. . For example, the chamber wall 112 can have a wall thickness (t) associated therewith, and the wall thickness (t) can vary from about 1 mm to about 5 mm. The first interface component 212a can have a first interface thickness (t _i1 ) associated therewith, and the first interface thickness (t _i1 ) can vary from about 1 mm to about 10 mm. The second interface component 212b can have a second interface thickness (t _i2 ) associated therewith, and the second interface thickness (t _i2 ) can vary from about 1 mm to about 10 mm. The process space 215 can have a length (x _T ) associated therewith, and the length (x _T ) can vary from about 10 mm to about 500 mm.

第二微波處理系統200的俯視圖顯示具有第一EM能量調整空間269a於其中的第一腔組件268a的切開視圖，且該第一腔組件268a可包含第一腔壁265a、第二腔壁266a、至少一個第三腔壁267a、及一個以上額外的腔壁（未顯示）。舉例來說，第一腔組件268a可利用第一腔壁265a連結至第一介面組件212a，並且壁（265a、266a、及267a）可包含介電材料且可具有與其相關聯的壁厚度（t_a ），而壁厚度（t_a ）可變化於自約1 mm到約5 mm。此外，第一EM能量調整空間269a可具有與其相關聯的第一長度（x_T1a ）及第一寬度（y_1a ），第一長度（x_T1a ）可變化於自約10 mm到約500 mm，且第一寬度（y_1a ）可變化於自約5 mm到約50 mm。The top view of the second microwave processing system 200 shows a cutaway view of the first chamber assembly 268a having the first EM energy adjustment space 269a therein, and the first chamber assembly 268a can include a first chamber wall 265a, a second chamber wall 266a, At least one third lumen wall 267a, and one or more additional lumen walls (not shown). For example, the first cavity assembly 268a can be coupled to the first interface component 212a using the first cavity wall 265a, and the walls (265a, 266a, and 267a) can comprise a dielectric material and can have a wall thickness associated therewith (t _a ), and the wall thickness (t _a ) can vary from about 1 mm to about 5 mm. In addition, the first EM energy adjustment space 269a may have a first length (x _T1a ) and a first width (y _1a ) associated therewith, and the first length (x _T1a ) may vary from about 10 mm to about 500 mm, And the first width (y _1a ) can vary from about 5 mm to about 50 mm.

第二微波處理系統200的俯視圖亦顯示具有第二EM能量調整空間269b於其中的第二腔組件268b的切開視圖，且該第二腔組件268b可包含第一腔壁265b、第二腔壁266b、至少一個第三腔壁267b、及一個以上額外的腔壁（未顯示）。舉例來說，第二腔組件268b可利用第一腔壁265b連結至第二介面組件212b，並且壁（265b、266b、及267b）可包含介電材料且可具有與其相關聯的壁厚度（t_b ），而壁厚度（t_b ）可變化於自約1 mm到約5 mm。此外，第二EM能量調整空間269b可具有與其相關聯的第二長度（x_T1b ）及第二寬度（y_1b ），第二長度（x_T1b ）可變化於自約10 mm到約500 mm，且第二寬度（y_1b ）可變化於自約5 mm到約50 mm。The top view of the second microwave processing system 200 also shows a cutaway view of the second chamber assembly 268b having the second EM energy adjustment space 269b therein, and the second chamber assembly 268b can include a first chamber wall 265b, a second chamber wall 266b At least one third lumen wall 267b, and one or more additional lumen walls (not shown). For example, the second cavity assembly 268b can be coupled to the second interface component 212b using the first cavity wall 265b, and the walls (265b, 266b, and 267b) can comprise a dielectric material and can have a wall thickness associated therewith (t _b ), and the wall thickness (t _b ) can vary from about 1 mm to about 5 mm. In addition, the second EM energy adjustment space 269b may have a second length (x _T1b ) and a second width (y _1b ) associated therewith, and the second length (x _T1b ) may vary from about 10 mm to about 500 mm. And the second width (y _1b ) can vary from about 5 mm to about 50 mm.

在若干例示系統中，可將一第一組隔離組件（264a、264b、264c、及264d）可移除自如地連結至第一介面組件212a，且可建構成用以將製程空間215隔離於第一EM能量調整空間269a。該第一組隔離組件（264a、264b、264c、及264d）可用以將第一組電漿調整桿﹛（270a、270b、270c、及270d）和（275a、275b、275c、及275d）﹜可移除自如地連結至第一介面組件212a。舉例而言，第一組電漿調整部（270a、270b、270c、及270d）可建構於製程空間215之中，且第一組EM調整部（275a、275b、275c、及275d）可建構於第一EM能量調整空間269a之內。In a number of exemplary systems, a first set of isolation components (264a, 264b, 264c, and 264d) can be removably coupled to the first interface component 212a and can be configured to isolate the process space 215 from the first An EM energy adjustment space 269a. The first set of isolation components (264a, 264b, 264c, and 264d) can be used to make the first set of plasma adjustment rods {(270a, 270b, 270c, and 270d) and (275a, 275b, 275c, and 275d)} The connection is freely coupled to the first interface component 212a. For example, the first set of plasma adjustment sections (270a, 270b, 270c, and 270d) may be constructed in the process space 215, and the first set of EM adjustment sections (275a, 275b, 275c, and 275d) may be constructed The first EM energy adjustment space 269a is within.

可將第二組隔離組件（264e、264f、264g、及264h）可移除自如地連結至第二介面組件212b，且可建構成用以將製程空間215隔離於第二EM能量調整空間269b。該第二組隔離組件（264e、264f、264g、及264h）可用以將第二組電漿調整桿﹛（270e、270f、270g、及270h）和（275e、275f、275g、及275h）﹜可移除自如地連結至第二介面組件212b。舉例而言，第二組電漿調整部（270e、270f、270g、及270h）可建構於製程空間215之中，且第二組EM調整部（275e、275f、275g、及275h）可建構於第二EM能量調整空間269b之內。The second set of isolation components (264e, 264f, 264g, and 264h) can be removably coupled to the second interface component 212b and can be configured to isolate the process space 215 from the second EM energy adjustment space 269b. The second set of isolation components (264e, 264f, 264g, and 264h) can be used to set the second set of plasma adjustment rods {(270e, 270f, 270g, and 270h) and (275e, 275f, 275g, and 275h)} The connection is freely coupled to the second interface component 212b. For example, the second set of plasma adjustment sections (270e, 270f, 270g, and 270h) may be constructed in the process space 215, and the second set of EM adjustment sections (275e, 275f, 275g, and 275h) may be constructed Within the second EM energy adjustment space 269b.

仍然參考圖2A，第一電漿調整桿（270a, 275a）可包含介電材料，且可具有第一電漿調整部270a，其可於利用（x_2a ）加以定義的第一位置延伸第一電漿調整距離271a進入製程空間215。第一電漿調整距離271a可變化於自約10 mm到約400 mm。Still extend 2A, the plasma of the first adjusting rod (270a, 275a) may include a dielectric material, and may have a first plasma adjusting portion 270a, which may be in use (x _2a) is defined to be a first position of a first The plasma adjustment distance 271a enters the process space 215. The first plasma adjustment distance 271a can vary from about 10 mm to about 400 mm.

第一EM耦合區域262a可在建立於第一腔組件268a之中的第一EM能量調整空間269a之內於由第一腔壁265a之第一EM耦合距離276a處加以建立，並且第一EM調整部275a可延伸進入第一EM耦合區域262a。第一EM調整部275a可自第一EM耦合區域262a取得第一微波能量，且第一微波能量可利用第一電漿調整部270a於第一位置（x_2a ）傳送至製程空間215。第一EM耦合區域262a可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第一EM耦合距離276a可變化於約0.01 mm到約10 mm，並且第一EM耦合距離276a可為波長相依且可變化於約（λ/4）到約（10λ）。The first EM coupling region 262a can be established within the first EM energy adjustment space 269a established in the first cavity assembly 268a at the first EM coupling distance 276a of the first cavity wall 265a, and the first EM adjustment Portion 275a can extend into first EM coupling region 262a. The first EM adjustment portion 275a can obtain the first microwave energy from the first EM coupling region 262a, and the first microwave energy can be transmitted to the process space 215 at the first position (x _2a ) by the first plasma adjustment portion 270a. The first EM coupling region 262a can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the first EM coupling distance 276a can vary from about 0.01 mm to about 10 mm, and the first EM coupling distance 276a can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第一電漿調整板261a可包含介電材料，可連結至第一控制組件260a，其可用以在第一EM能量調整空間269a之內將該第一電漿調整板261a相對於第一電漿調整桿（270a, 275a）的第一EM調整部275a移動263a一第一EM調整距離277a。該第一控制組件260a和該第一電漿調整板261a可用以將自第一EM耦合區域262a耦合至第一電漿調整桿（270a, 275a）的第一EM調整部275a之微波能量予以最佳化。舉例來說，第一EM調整距離277a可建立於第一EM能量調整空間269a內之第一EM調整部275a和第一電漿調整板261a之間，且第一EM調整距離277a可變化於約0.01 mm到約1 mm。The first plasma conditioning plate 261a can include a dielectric material that can be coupled to the first control component 260a that can be used to move the first plasma conditioning plate 261a relative to the first plasma within the first EM energy conditioning space 269a The first EM adjustment portion 275a of the adjustment lever (270a, 275a) moves 263a by a first EM adjustment distance 277a. The first control assembly 260a and the first plasma adjustment plate 261a can be used to couple the microwave energy of the first EM adjustment portion 275a coupled from the first EM coupling region 262a to the first plasma adjustment rod (270a, 275a). Jiahua. For example, the first EM adjustment distance 277a may be established between the first EM adjustment portion 275a and the first plasma adjustment plate 261a in the first EM energy adjustment space 269a, and the first EM adjustment distance 277a may vary From 0.01 mm to about 1 mm.

第一電漿調整桿（270a, 275a）可具有與其相關聯的第一直徑（d_1a ），且第一直徑（d_1a ）可變化於約0.01 mm到約1 mm。第一電漿調整板261a可具有與其相關聯的第一直徑（D_1a ），且第一直徑（D_1a ）可變化於約1 mm到約10 mm。第一EM耦合區域262a、第一控制組件260a、及第一電漿調整板261a可具有與其相關聯的第一x/y平面偏移（x_1a ），且第一x/y平面偏移（x_1a ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第一控制組件260a可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1a ）。The first diameter (d _1a) a first plasma adjustment lever (270a, 275a) may have associated therewith, and the first diameter (d _1a) may vary from about 0.01 mm to about 1 mm. The first plasma conditioning plate 261a can have a first diameter (D _1a ) associated therewith, and the first diameter (D _1a ) can vary from about 1 mm to about 10 mm. The first EM coupling region 262a, the first control component 260a, and the first plasma conditioning plate 261a can have a first x/y plane offset (x _1a ) associated therewith, and the first x/y plane offset ( x _1a ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The first control component 260a can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1a ) from about 1 mm to about 5 mm.

第二電漿調整桿（270b, 275b）可包含介電材料，且可具有第二電漿調整部270b，其可於利用（x_2b ）加以定義的第二位置延伸第二電漿調整距離271b進入製程空間215。舉例來說，第二電漿調整距離271b可變化於約10 mm到約400 mm。A second plasma a second position adjusting lever (270b, 275b) may comprise a dielectric material, and may have a second plasma adjustment portion 270B, which may be in use (x _2b) be defined extending from the second plasma adjustment 271b Enter the process space 215. For example, the second plasma adjustment distance 271b can vary from about 10 mm to about 400 mm.

第二EM耦合區域262b可在建立於第一腔組件268a之中的第一EM能量調整空間269a之內於由第一腔壁265a之第二EM耦合距離276b處加以建立，並且第二EM調整部275b可延伸進入第二EM耦合區域262b。第二EM調整部275b可自第二EM耦合區域262b取得第二微波能量，且第二微波能量可利用第二電漿調整部270b於第二位置（x_2b ）傳送至製程空間215。第二EM耦合區域262b可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第二EM耦合距離276b可變化於約0.01 mm到約10 mm，並且第二EM耦合距離276b可為波長相依且可變化於約（λ/4）到約（10λ）。The second EM coupling region 262b can be established within the first EM energy adjustment space 269a established in the first chamber assembly 268a at the second EM coupling distance 276b by the first chamber wall 265a, and the second EM adjustment Portion 275b can extend into the second EM coupling region 262b. The second EM adjustment unit 275b can obtain the second microwave energy from the second EM coupling region 262b, and the second microwave energy can be transmitted to the processing space 215 at the second position (x _2b ) by the second plasma adjustment portion 270b. The second EM coupling region 262b can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the second EM coupling distance 276b can vary from about 0.01 mm to about 10 mm, and the second EM coupling distance 276b can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第二電漿調整板261b可包含介電材料，可連結至第二控制組件260b，其可用以在第一EM能量調整空間269a之內將該第二電漿調整板261b相對於第二電漿調整桿（270b, 275b）的第二EM調整部275b移動263b一第二EM調整距離277b。該第二控制組件260b和該第二電漿調整板261b可用以將自第二EM耦合區域262b耦合至第二電漿調整桿（270b, 275b）的第二EM調整部275b之微波能量予以最佳化。舉例來說，第二EM調整距離277b可建立於第一EM能量調整空間269a內之第二EM調整部275b和第二電漿調整板261b之間，且第二EM調整距離277b可變化於約0.01 mm到約1 mm。The second plasma conditioning plate 261b can include a dielectric material that can be coupled to the second control component 260b that can be used to compare the second plasma conditioning plate 261b relative to the second plasma within the first EM energy conditioning space 269a The second EM adjustment portion 275b of the adjustment lever (270b, 275b) moves 263b to a second EM adjustment distance 277b. The second control component 260b and the second plasma conditioning plate 261b can be used to couple the microwave energy of the second EM adjustment portion 275b coupled from the second EM coupling region 262b to the second plasma adjustment rod (270b, 275b). Jiahua. For example, the second EM adjustment distance 277b may be established between the second EM adjustment portion 275b and the second plasma adjustment plate 261b in the first EM energy adjustment space 269a, and the second EM adjustment distance 277b may vary from approximately From 0.01 mm to about 1 mm.

第二電漿調整桿（270b, 275b）可具有與其相關聯的第二直徑（d_1b ），且第二直徑（d_1b ）可變化於約0.01 mm到約1 mm。第二電漿調整板261b可具有與其相關聯的第二直徑（D_1b ），且第二直徑（D_1b ）可變化於約1 mm到約10 mm。第二EM耦合區域262b、第二控制組件260b、及第二電漿調整板261b可具有與其相關聯的第二x/y平面偏移（x_1b ），且第二x/y平面偏移（x_1b ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第二控制組件260b可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1b ）。The second diameter (d _1b) a second plasma adjustment lever (270b, 275b) may have associated therewith, and a second diameter (d _1b) may vary from about 0.01 mm to about 1 mm. The second plasma conditioning plate 261b can have a second diameter ( _D1b ) associated therewith, and the second diameter ( _D1b ) can vary from about 1 mm to about 10 mm. The second EM coupling region 262b, the second control component 260b, and the second plasma conditioning plate 261b can have a second x/y plane offset (x _1b ) associated therewith, and a second x/y plane offset ( x _1b ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The second control component 260b can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1b ) from about 1 mm to about 5 mm.

第三電漿調整桿（270c, 275c）可包含介電材料，且可具有第三電漿調整部270c，其可於利用（x_2c ）加以定義的第三位置延伸第三電漿調整距離271c進入製程空間215。舉例來說，第三電漿調整距離271c可變化於約10 mm到約400 mm。The third plasma adjustment rod (270c, 275c) may comprise a dielectric material and may have a third plasma adjustment portion 270c that may extend the third plasma adjustment distance 271c at a third position defined by (x _2c ) Enter the process space 215. For example, the third plasma adjustment distance 271c can vary from about 10 mm to about 400 mm.

第三EM耦合區域262c可在建立於第一腔組件268a之中的第一EM能量調整空間269a之內，於由第一腔壁265a之第三EM耦合距離276c處加以建立，並且第三EM調整部275c可延伸進入第三EM耦合區域262c。第三EM調整部275c可自第三EM耦合區域262c取得第三微波能量，且第三微波能量可利用第三電漿調整部270c於第三位置（x_2c ）傳送至製程空間215。第三EM耦合區域262c可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第三EM耦合距離276c可變化於約0.01 mm到約10 mm，並且第三EM耦合距離276c可為波長相依且可變化於約（λ/4）到約（10λ）。The third EM coupling region 262c can be established within the first EM energy adjustment space 269a established in the first chamber assembly 268a at the third EM coupling distance 276c of the first chamber wall 265a, and the third EM The adjustment portion 275c can extend into the third EM coupling region 262c. The third EM adjustment unit 275c may obtain the third microwave energy from the third EM coupling region 262c, and the third microwave energy may be transmitted to the process space 215 at the third position (x _2c ) by the third plasma adjustment portion 270c. The third EM coupling region 262c can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the third EM coupling distance 276c can vary from about 0.01 mm to about 10 mm, and the third EM coupling distance 276c can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第三電漿調整板261c可包含介電材料，可連結至第三控制組件260c，其可用以在第一EM能量調整空間269a之內將該第三電漿調整板261c相對於第三電漿調整桿（270c, 275c）的第三EM調整部275c移動263c一第三EM調整距離277c。該第三控制組件260c和該第三電漿調整板261c可用以將自第三EM耦合區域262c耦合至第三電漿調整桿（270c, 275c）的第三EM調整部275c之微波能量予以最佳化。舉例來說，第三EM調整距離277c可建立於第一EM能量調整空間269a內之第三EM調整部275c和第三電漿調整板261c之間，且第三EM調整距離277c可變化於約0.01 mm到約1 mm。The third plasma adjustment plate 261c may include a dielectric material coupled to the third control component 260c, which may be used to compare the third plasma adjustment plate 261c with respect to the third plasma within the first EM energy adjustment space 269a. The third EM adjustment portion 275c of the adjustment lever (270c, 275c) moves 263c to a third EM adjustment distance 277c. The third control component 260c and the third plasma adjustment plate 261c can be used to couple the microwave energy of the third EM adjustment portion 275c coupled from the third EM coupling region 262c to the third plasma adjustment lever (270c, 275c). Jiahua. For example, the third EM adjustment distance 277c may be established between the third EM adjustment portion 275c and the third plasma adjustment plate 261c in the first EM energy adjustment space 269a, and the third EM adjustment distance 277c may vary from about From 0.01 mm to about 1 mm.

第三電漿調整桿（270c, 275c）可具有與其相關聯的第三直徑（d_1c ），且第三直徑（d_1c ）可變化於約0.01 mm到約1 mm。第三電漿調整板261c可具有與其相關聯的第三直徑（D_1c ），且第三直徑（D_1c ）可變化於約1 mm到約10 mm。第三EM耦合區域262c、第三控制組件260c、及第三電漿調整板261c可具有與其相關聯的第三x/y平面偏移（x_1c ），且第三x/y平面偏移（x_1c ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第三控制組件260c可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1c ）。The third plasma adjustment rod (270c, 275c) can have a third diameter (d _1c ) associated therewith, and the third diameter (d _1c ) can vary from about 0.01 mm to about 1 mm. The third plasma conditioning plate 261c can have a third diameter (D _1c ) associated therewith, and the third diameter (D _1c ) can vary from about 1 mm to about 10 mm. The third EM coupling region 262c, the third control component 260c, and the third plasma conditioning plate 261c may have a third x/y plane offset (x _1c ) associated therewith, and a third x/y plane offset ( x _1c ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The third control component 260c can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1c ) from about 1 mm to about 5 mm.

第四電漿調整桿（270d, 275d）可包含介電材料，且可具有第四電漿調整部270d，其可於利用（x_2d ）加以定義的第四位置延伸第四電漿調整距離271d進入製程空間215。舉例來說，第四電漿調整距離271d可變化於約10 mm到約400 mm。The fourth adjusting lever plasma (270d, 275d) may comprise a dielectric material, and may have a fourth portion 270d to adjust the plasma, which may be in use (x _2d) extending in a fourth position to be defined by adjusting the distance a fourth plasma 271d Enter the process space 215. For example, the fourth plasma adjustment distance 271d can vary from about 10 mm to about 400 mm.

第四EM耦合區域262d可在建立於第一腔組件268a之中的第一EM能量調整空間269a之內，於由第一腔壁265a之第四EM耦合距離276d處加以建立，並且第四EM調整部275d可延伸進入第四EM耦合區域262d。第四EM調整部275d可自第四EM耦合區域262d取得第四微波能量，且第四微波能量可利用第四電漿調整部270d於第四位置（x_2d ）傳送至製程空間215。第四EM耦合區域262d可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第四EM耦合距離276d可變化於約0.01 mm到約10 mm，並且第四EM耦合距離276d可為波長相依且可變化於約（λ/4）到約（10λ）。The fourth EM coupling region 262d can be established within the first EM energy adjustment space 269a established in the first cavity assembly 268a at the fourth EM coupling distance 276d of the first cavity wall 265a, and the fourth EM The adjustment portion 275d can extend into the fourth EM coupling region 262d. The fourth EM adjustment unit 275d may obtain the fourth microwave energy from the fourth EM coupling region 262d, and the fourth microwave energy may be transmitted to the processing space 215 at the fourth position (x _2d ) by the fourth plasma adjustment portion 270d. The fourth EM coupling region 262d can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the fourth EM coupling distance 276d can vary from about 0.01 mm to about 10 mm, and the fourth EM coupling distance 276d can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第四電漿調整板261d可包含介電材料，可連結至第四控制組件260d，其可用以在第一EM能量調整空間269a之內將該第四電漿調整板261d相對於第四電漿調整桿（270d, 275d）的第四EM調整部275d移動263d一第四EM調整距離277d。該第四控制組件260d和該第四電漿調整板261d可用以將自第四EM耦合區域262d耦合至第四電漿調整桿（270d, 275d）的第四EM調整部275d之微波能量予以最佳化。舉例來說，第四EM調整距離277d可建立於第一EM能量調整空間269a內之第四EM調整部275d和第四電漿調整板261d之間，且第四EM調整距離277d可變化於約0.01 mm到約1 mm。The fourth plasma adjusting plate 261d may include a dielectric material coupled to the fourth control component 260d, which may be used to compare the fourth plasma adjusting plate 261d with respect to the fourth plasma within the first EM energy adjusting space 269a. The fourth EM adjustment portion 275d of the adjustment lever (270d, 275d) moves 263d to a fourth EM adjustment distance 277d. The fourth control component 260d and the fourth plasma adjustment plate 261d can be used to couple the microwave energy of the fourth EM adjustment portion 275d coupled from the fourth EM coupling region 262d to the fourth plasma adjustment lever (270d, 275d). Jiahua. For example, the fourth EM adjustment distance 277d may be established between the fourth EM adjustment portion 275d and the fourth plasma adjustment plate 261d in the first EM energy adjustment space 269a, and the fourth EM adjustment distance 277d may vary from about From 0.01 mm to about 1 mm.

第四電漿調整桿（270d, 275d）可具有與其相關聯的第四直徑（d_1d ），且第四直徑（d_1d ）可變化於約0.01 mm到約1 mm。第四電漿調整板261d可具有與其相關聯的第四直徑（D_1d ），且第四直徑（D_1d ）可變化於約1 mm到約10 mm。第四EM耦合區域262d、第四控制組件260d、及第四電漿調整板261d可具有與其相關聯的第四x/y平面偏移（x_1d ），且第四x/y平面偏移（x_1d ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第四控制組件260d可包含介電材料，且可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1d ）。Fourth diameter (d _1d) plasma fourth adjusting lever (270d, 275d) may have associated therewith, and a fourth diameter (d _1d) may vary from about 0.01 mm to about 1 mm. The fourth plasma adjustment plate 261d may have a fourth diameter ( _D1d ) associated therewith, and the fourth diameter ( _D1d ) may vary from about 1 mm to about 10 mm. The fourth EM coupling region 262d, the fourth control component 260d, and the fourth plasma conditioning plate 261d may have a fourth x/y plane offset (x _1d ) associated therewith, and a fourth x/y plane offset ( x _1d ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The fourth control component 260d can comprise a dielectric material and can have a cylindrical configuration and a diameter (d _1d ) that can vary from about 1 mm to about 5 mm.

第五電漿調整桿（270e, 275e）可包含介電材料，且可具有第五電漿調整部270e，其可於利用（x_2e ）加以定義的第五位置延伸第五電漿調整距離271e進入製程空間215。舉例來說，第五電漿調整距離271e可變化於約10 mm到約400 mm。The fifth plasma adjusting rod (270e, 275e) may include a dielectric material, and may have a fifth plasma adjusting portion 270e that may extend the fifth plasma adjusting distance 271e at a fifth position defined by (x _2e ) Enter the process space 215. For example, the fifth plasma adjustment distance 271e can vary from about 10 mm to about 400 mm.

第五EM耦合區域262e可在建立於第二腔組件268b之中的第二EM能量調整空間269b之內，於由第一腔壁265b之第五EM耦合距離276e處加以建立，並且第五EM調整部275e可延伸進入第五EM耦合區域262e。第五EM調整部275e可自第五EM耦合區域262e取得第五微波能量，且第五微波能量可利用第五電漿調整部270e於第五位置（x_2e ）傳送至製程空間215。第五EM耦合區域262e可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第五EM耦合距離276e可變化於約0.01 mm到約10 mm，並且第五EM耦合距離276e可為波長相依且可變化於約（λ/4）到約（10λ）。The fifth EM coupling region 262e can be established within the second EM energy adjustment space 269b established in the second cavity assembly 268b at the fifth EM coupling distance 276e of the first cavity wall 265b, and the fifth EM The adjustment portion 275e can extend into the fifth EM coupling region 262e. The fifth EM adjustment unit 275e can obtain the fifth microwave energy from the fifth EM coupling region 262e, and the fifth microwave energy can be transmitted to the processing space 215 at the fifth position (x _2e ) by the fifth plasma adjusting portion 270e. The fifth EM coupling region 262e can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the fifth EM coupling distance 276e can vary from about 0.01 mm to about 10 mm, and the fifth EM coupling distance 276e can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第五電漿調整板261e可包含介電材料，可連結至第五控制組件260e，其可用以在第二EM能量調整空間269b之內將該第五電漿調整板261e相對於第五電漿調整桿（270e, 275e）的第五EM調整部275e移動263e一第五EM調整距離277e。該第五控制組件260e和該第五電漿調整板261e可用以將自第五EM耦合區域262e耦合至第五電漿調整桿（270e, 275e）的第五EM調整部275e之微波能量予以最佳化。舉例來說，第五EM調整距離277e可建立於第二EM能量調整空間269b內之第五EM調整部275e和第五電漿調整板261e之間，且第五EM調整距離277e可變化於約0.01 mm到約1 mm。The fifth plasma adjusting plate 261e may include a dielectric material coupled to the fifth control component 260e, which may be used to compare the fifth plasma adjusting plate 261e with respect to the fifth plasma within the second EM energy adjusting space 269b. The fifth EM adjustment portion 275e of the adjustment lever (270e, 275e) moves 263e by a fifth EM adjustment distance 277e. The fifth control unit 260e and the fifth plasma adjusting plate 261e can be used to couple the microwave energy of the fifth EM adjusting portion 275e coupled from the fifth EM coupling region 262e to the fifth plasma adjusting rod (270e, 275e). Jiahua. For example, the fifth EM adjustment distance 277e may be established between the fifth EM adjustment portion 275e and the fifth plasma adjustment plate 261e in the second EM energy adjustment space 269b, and the fifth EM adjustment distance 277e may vary from about From 0.01 mm to about 1 mm.

第五電漿調整桿（270e, 275e）可具有與其相關聯的第五直徑（d_1e ），且第五直徑（d_1e ）可變化於約0.01 mm到約1 mm。第五電漿調整板261e可具有與其相關聯的第五直徑（D_1e ），且第五直徑（D_1e ）可變化於約1 mm到約10 mm。第五EM耦合區域262e、第五控制組件260e、及第五電漿調整板261e可具有與其相關聯的第五x/y平面偏移（x_1e ），且第五x/y平面偏移（x_1e ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第五控制組件260e可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1e ）。The fifth plasma adjustment rod (270e, 275e) may have a fifth diameter (d _1e ) associated therewith, and the fifth diameter (d _1e ) may vary from about 0.01 mm to about 1 mm. The fifth plasma adjustment plate 261e may have a fifth diameter (D _1e ) associated therewith, and the fifth diameter (D _1e ) may vary from about 1 mm to about 10 mm. The fifth EM coupling region 262e, the fifth control component 260e, and the fifth plasma adjustment plate 261e may have a fifth x/y plane offset (x _1e ) associated therewith, and a fifth x/y plane offset ( x _1e ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The fifth control assembly 260e can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1e ) from about 1 mm to about 5 mm.

繼續參照圖2A，第六電漿調整桿（270f, 275f）可包含介電材料，且可具有第六電漿調整部270f，其可於利用（x_2f ）加以定義的第六位置延伸第六電漿調整距離271f進入製程空間215。第六電漿調整距離271f可變化於約10 mm到約400 mm。With continued reference to Figure 2A, a sixth plasma adjustment lever (270f, 275f) may comprise a dielectric material, and may have a plasma sixth adjustment unit 270f, which may be in use (x _2f) extending in the sixth position to be defined in the sixth The plasma adjustment distance 271f enters the process space 215. The sixth plasma adjustment distance 271f can vary from about 10 mm to about 400 mm.

第六EM耦合區域262f可在建立於第二腔組件268b之中的第二EM能量調整空間269b之內，於由第一腔壁265b之第六EM耦合距離276f處加以建立，並且第六EM調整部275f可延伸進入第六EM耦合區域262f。第六EM調整部275f可自第六EM耦合區域262f取得第六微波能量，且第六微波能量可利用第六電漿調整部270f於第六位置（x_2f ）傳送至製程空間215。第六EM耦合區域262f可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第六EM耦合距離276f可變化於約0.01 mm到約10 mm，並且第六EM耦合距離276f可為波長相依且可變化於約（λ/4）到約（10λ）。The sixth EM coupling region 262f can be established within the second EM energy adjustment space 269b established in the second cavity assembly 268b at the sixth EM coupling distance 276f of the first cavity wall 265b, and the sixth EM The adjustment portion 275f may extend into the sixth EM coupling region 262f. The sixth EM adjustment unit 275f can obtain the sixth microwave energy from the sixth EM coupling region 262f, and the sixth microwave energy can be transmitted to the processing space 215 at the sixth position (x _2f ) by the sixth plasma adjustment portion 270f. The sixth EM coupling region 262f can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the sixth EM coupling distance 276f can vary from about 0.01 mm to about 10 mm, and the sixth EM coupling distance 276f can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第六電漿調整板261f可包含介電材料，可連結至第六控制組件260f，其可用以在第二EM能量調整空間269b之內將該第六電漿調整板261f相對於第六電漿調整桿（270f, 275f）的第六EM調整部275f移動263f一第六EM調整距離277f。該第六控制組件260f和該第六電漿調整板261f可用以將自第六EM耦合區域262f耦合至第六電漿調整桿（270f, 275f）的第六EM調整部275f之微波能量予以最佳化。舉例來說，第六EM調整距離277f可建立於第二EM能量調整空間269b內之第六EM調整部275f和第六電漿調整板261f之間，且第六EM調整距離277f可變化於約0.01 mm到約1 mm。The sixth plasma adjusting plate 261f may include a dielectric material that may be coupled to the sixth control component 260f, which may be used to compare the sixth plasma adjusting plate 261f with respect to the sixth plasma within the second EM energy adjusting space 269b. The sixth EM adjustment portion 275f of the adjustment lever (270f, 275f) moves 263f to a sixth EM adjustment distance 277f. The sixth control unit 260f and the sixth plasma adjusting plate 261f can be used to couple the microwave energy of the sixth EM adjusting portion 275f coupled from the sixth EM coupling region 262f to the sixth plasma adjusting rod (270f, 275f). Jiahua. For example, the sixth EM adjustment distance 277f may be established between the sixth EM adjustment portion 275f and the sixth plasma adjustment plate 261f in the second EM energy adjustment space 269b, and the sixth EM adjustment distance 277f may vary from about From 0.01 mm to about 1 mm.

第六電漿調整桿（270f, 275f）可具有與其相關聯的第六直徑（d_1f ），且第六直徑（d_1f ）可變化於約0.01 mm到約1 mm。第六電漿調整板261f可具有與其相關聯的第六直徑（D_1f ），且第六直徑（D_1f ）可變化於約1 mm到約10 mm。第六EM耦合區域262f、第六控制組件260f、及第六電漿調整板261f可具有與其相關聯的第六x/y平面偏移（x_1f ），且第六x/y平面偏移（x_1f ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第六控制組件260f可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1f ）。The sixth plasma adjustment rod (270f, 275f) may have a sixth diameter (d _1f ) associated therewith, and the sixth diameter (d _1f ) may vary from about 0.01 mm to about 1 mm. The sixth plasma conditioning plate 261f can have a sixth diameter (D _1f ) associated therewith, and the sixth diameter (D _1f ) can vary from about 1 mm to about 10 mm. The sixth EM coupling region 262f, the sixth control component 260f, and the sixth plasma adjustment plate 261f may have a sixth x/y plane offset (x _1f ) associated therewith, and a sixth x/y plane offset ( x _1f ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The sixth control assembly 260f can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1f ) from about 1 mm to about 5 mm.

第七電漿調整桿（270g, 275g）可包含介電材料，且可具有第七電漿調整部270g，其可於利用（x_2g ）加以定義的第七位置延伸第七電漿調整距離271g進入製程空間215。第七電漿調整距離271g可變化於約10 mm到約400 mm。The seventh plasma adjusting rod (270g, 275g) may comprise a dielectric material, and may have a seventh plasma adjusting portion 270g, which may extend the seventh plasma adjusting distance 271g at a seventh position defined by (x _2g ) Enter the process space 215. The seventh plasma adjustment distance 271g can vary from about 10 mm to about 400 mm.

第七EM耦合區域262g可在建立於第二腔組件268b之中的第二EM能量調整空間269b之內，於由第一腔壁265b之第七EM耦合距離276g處加以建立，並且第七EM調整部275g可延伸進入第七EM耦合區域262g。第七EM調整部275g可自第七EM耦合區域262g取得第七微波能量，且第七微波能量可利用第七電漿調整部270g於第七位置（x_2g ）傳送至製程空間215。第七EM耦合區域262g可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第七EM耦合距離276g可變化於約0.01 mm到約10 mm，並且第七EM耦合距離276g可為波長相依且可變化於約（λ/4）到約（10λ）。The seventh EM coupling region 262g may be established within the second EM energy adjustment space 269b established in the second cavity assembly 268b at the seventh EM coupling distance 276g of the first cavity wall 265b, and the seventh EM The adjustment portion 275g may extend into the seventh EM coupling region 262g. The seventh EM adjustment unit 275g can obtain the seventh microwave energy from the seventh EM coupling region 262g, and the seventh microwave energy can be transmitted to the processing space 215 at the seventh position (x _2g ) by the seventh plasma adjustment unit 270g. The seventh EM coupling region 262g can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the seventh EM coupling distance 276g can vary from about 0.01 mm to about 10 mm, and the seventh EM coupling distance 276g can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第七電漿調整板261g可包含介電材料，可連結至第七控制組件260g，其可用以在第二EM能量調整空間269b之內將該第七電漿調整板261g相對於第七電漿調整桿（270g, 275g）的第七EM調整部275g移動263g一第七EM調整距離277g。該第七控制組件260g和該第七電漿調整板261g可用以將自第七EM耦合區域262g耦合至第七電漿調整桿（270g, 275g）的第七EM調整部275g之微波能量予以最佳化。舉例來說，第七EM調整距離277g可建立於第二EM能量調整空間269b內之第七EM調整部275g和第七電漿調整板261g之間，且第七EM調整距離277g可變化於約0.01 mm到約1 mm。The seventh plasma adjusting plate 261g may include a dielectric material coupled to the seventh control component 260g, which may be used to compare the seventh plasma adjusting plate 261g with respect to the seventh plasma within the second EM energy adjusting space 269b. The seventh EM adjustment portion 275g of the adjustment lever (270 g, 275 g) moves 263 g to a seventh EM adjustment distance 277 g. The seventh control unit 260g and the seventh plasma adjusting plate 261g can be used to maximize the microwave energy of the seventh EM adjusting portion 275g coupled from the seventh EM coupling region 262g to the seventh plasma adjusting rod (270g, 275g). Jiahua. For example, the seventh EM adjustment distance 277g may be established between the seventh EM adjustment portion 275g and the seventh plasma adjustment plate 261g in the second EM energy adjustment space 269b, and the seventh EM adjustment distance 277g may vary from about From 0.01 mm to about 1 mm.

第七電漿調整桿（270g, 275g）可具有與其相關聯的第七直徑（d_1g ），且第七直徑（d_1g ）可變化於約0.01 mm到約1 mm。第七電漿調整板261g可具有與其相關聯的第七直徑（D_1g ），且第七直徑（D_1g ）可變化於約1 mm到約10 mm。第七EM耦合區域262g、第七控制組件260g、及第七電漿調整板261g可具有與其相關聯的第七x/y平面偏移（x_1g ），且第七x/y平面偏移（x_1g ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第七控制組件260g可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1g ）。The seventh plasma adjustment rod (270 g, 275 g) can have a seventh diameter (d _1g ) associated therewith, and the seventh diameter (d _1g ) can vary from about 0.01 mm to about 1 mm. The seventh plasma conditioning plate 261g can have a seventh diameter (D _1g ) associated therewith, and the seventh diameter (D _1g ) can vary from about 1 mm to about 10 mm. The seventh EM coupling region 262g, the seventh control component 260g, and the seventh plasma adjustment plate 261g may have a seventh x/y plane offset (x _1g ) associated therewith, and a seventh x/y plane offset ( x _1g ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The seventh control assembly 260g can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1g ) from about 1 mm to about 5 mm.

第八電漿調整桿（270h, 275h）可包含介電材料，且可具有第八電漿調整部270h，其可於利用（x_2h ）加以定義的第八位置延伸第八電漿調整距離271h進入製程空間215。第八電漿調整距離271h可變化於約10 mm到約400 mm。The eighth plasma adjustment rod (270h, 275h) may include a dielectric material, and may have an eighth plasma adjustment portion 270h that may extend the eighth plasma adjustment distance 271h at the eighth position defined by (x _2h ) Enter the process space 215. The eighth plasma adjustment distance 271h can vary from about 10 mm to about 400 mm.

第八EM耦合區域262h可在建立於第二腔組件268b之中的第二EM能量調整空間269b之內，於由第一腔壁265b之第八EM耦合距離276h處加以建立，並且第八EM調整部275h可延伸進入第八EM耦合區域262h。第八EM調整部275h可自第八EM耦合區域262h取得第八微波能量，且第八微波能量可利用第八電漿調整部270h於第八位置（x_2h ）傳送至製程空間215。第八EM耦合區域262h可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第八EM耦合距離276h可變化於約0.01 mm到約10 mm，並且第八EM耦合距離276h可為波長相依且可變化於約（λ/4）到約（10λ）。The eighth EM coupling region 262h may be established within the second EM energy adjustment space 269b established in the second cavity assembly 268b at the eighth EM coupling distance 276h of the first cavity wall 265b, and the eighth EM The adjustment portion 275h can extend into the eighth EM coupling region 262h. The eighth EM adjustment unit 275h can obtain the eighth microwave energy from the eighth EM coupling region 262h, and the eighth microwave energy can be transmitted to the process space 215 at the eighth position (x _2h ) by the eighth plasma adjustment portion 270h. The eighth EM coupling region 262h can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the eighth EM coupling distance 276h can vary from about 0.01 mm to about 10 mm, and the eighth EM coupling distance 276h can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第八電漿調整板261h可包含介電材料，可連結至第八控制組件260h，其可用以在第二EM能量調整空間269b之內將該第八電漿調整板261h相對於第八電漿調整桿（270h, 275h）的第八EM調整部275h移動263h一第八EM調整距離277h。該第八控制組件260h和該第八電漿調整板261h可用以將自第八EM耦合區域262h耦合至第八電漿調整桿（270h, 275h）的第八EM調整部275h之微波能量予以最佳化。舉例來說，第八EM調整距離277h可建立於第二EM能量調整空間269b內之第八EM調整部275h和第八電漿調整板261h之間，且第八EM調整距離277h可變化於約0.01 mm到約1 mm。The eighth plasma adjusting plate 261h may include a dielectric material coupled to the eighth control component 260h, which may be used to compare the eighth plasma adjusting plate 261h with respect to the eighth plasma within the second EM energy adjusting space 269b. The eighth EM adjustment portion 275h of the adjustment lever (270h, 275h) moves 263h to an eighth EM adjustment distance 277h. The eighth control component 260h and the eighth plasma adjustment plate 261h can be used to couple the microwave energy of the eighth EM adjustment portion 275h coupled from the eighth EM coupling region 262h to the eighth plasma adjustment lever (270h, 275h). Jiahua. For example, the eighth EM adjustment distance 277h may be established between the eighth EM adjustment portion 275h and the eighth plasma adjustment plate 261h in the second EM energy adjustment space 269b, and the eighth EM adjustment distance 277h may vary from about From 0.01 mm to about 1 mm.

第八電漿調整桿（270h, 275h）可具有與其相關聯的第八直徑（d_1h ），且第八直徑（d_1h ）可變化於約0.01 mm到約1 mm。第八電漿調整板261h可具有與其相關聯的第八直徑（D_1h ），且第八直徑（D_1h ）可變化於約1 mm到約10 mm。第八EM耦合區域262h、第八控制組件260h、及第八電漿調整板261h可具有與其相關聯的第八x/y平面偏移（x_1h ），且第八x/y平面偏移（x_1h ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第八控制組件260h可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1h ）。The eighth plasma adjustment rod (270h, 275h) may have an eighth diameter (d _1h ) associated therewith, and the eighth diameter (d _1h ) may vary from about 0.01 mm to about 1 mm. The eighth plasma adjustment plate 261h may have an eighth diameter (D _1h ) associated therewith, and the eighth diameter (D _1h ) may vary from about 1 mm to about 10 mm. The eighth EM coupling region 262h, the eighth control component 260h, and the eighth plasma conditioning plate 261h may have an eighth x/y plane offset (x _1h ) associated therewith, and an eighth x/y plane offset ( x _1h ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The eighth control assembly 260h can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1h ) from about 1 mm to about 5 mm.

第二微波處理系統200的俯視圖包含第一腔控制組件245a的俯視圖，其被顯示連結第一腔調整板246a的俯視圖。第一腔控制組件245a可包含介電材料，且可具有與其相關聯的第一直徑（d_1aa ），且該第一直徑（d_1aa ）可變化於約0.01 mm到約1 mm。第一腔調整板246a可包含介電材料，且可具有與其相關聯的第二直徑（D_1aa ），且該第二直徑（D_1aa ）可變化於約1 mm到約10 mm。第一腔控制組件245a和第一腔調整板246a可具有與其相關聯的第一x/y平面偏移（y_1aa ），且第一x/y平面偏移（y_1aa ）可變化於約1 mm到約10 mm。The top view of the second microwave processing system 200 includes a top view of the first cavity control assembly 245a that is shown in a top view that joins the first cavity adjustment plate 246a. The first cavity control assembly 245a can comprise a dielectric material and can have a first diameter (d _1aa ) associated therewith, and the first diameter (d _1aa ) can vary from about 0.01 mm to about 1 mm. The first chamber adjustment plate 246a can comprise a dielectric material and can have a second diameter (D _1aa ) associated therewith, and the second diameter (D _1aa ) can vary from about 1 mm to about 10 mm. The first cavity control assembly 245a and the first cavity adjustment plate 246a can have a first x/y plane offset (y _1aa ) associated therewith, and the first x/y plane offset (y _1aa ) can vary from about 1 Mm to about 10 mm.

此外，第二微波處理系統200的俯視圖包含第二腔控制組件245b的俯視圖，其被顯示連結第二腔調整板246b的俯視圖。第二腔控制組件245b可包含介電材料，且可具有與其相關聯的第一額外直徑（d_1ba ），且該第一額外直徑（d_1ba ）可變化於約0.01 mm到約1 mm。第二腔調整板246b可包含介電材料，且可具有與其相關聯的第二額外直徑（D_1ba ），且該第二額外直徑（D_1ba ）可變化於約1 mm到約10 mm。第二腔控制組件245b和第二腔調整板246b可具有與其相關聯的第二x/y平面偏移（y_1ba ），且第二x/y平面偏移（y_1ba ）可變化於約1 mm到約10 mm。Additionally, the top view of the second microwave processing system 200 includes a top view of the second cavity control assembly 245b that is shown in a top view that joins the second cavity adjustment plate 246b. The second cavity control assembly 245b can comprise a dielectric material and can have a first additional diameter (d _1ba ) associated therewith, and the first additional diameter (d _1ba ) can vary from about 0.01 mm to about 1 mm. The second chamber adjustment plate 246b can comprise a dielectric material and can have a second additional diameter (D _1ba ) associated therewith, and the second additional diameter (D _1ba ) can vary from about 1 mm to about 10 mm. The second cavity control component 245b and the second cavity adjustment plate 246b can have a second x/y plane offset (y _1ba ) associated therewith, and the second x/y plane offset (y _1ba ) can vary from about 1 Mm to about 10 mm.

圖2B顯示在第二微波處理系統200中第二製程腔室210的局部切開前視圖。該前視圖顯示互相連結的複數額外的壁212的x/z平面視圖，藉此建立在第二製程腔室210之中的製程空間215的局部切開前視圖。第二微波處理系統200可建構成用以在製程空間215之中形成均勻電漿。2B shows a partially cutaway front view of the second process chamber 210 in the second microwave processing system 200. The front view shows an x/z plan view of the plurality of additional walls 212 interconnected, thereby establishing a partially cut front view of the process space 215 in the second process chamber 210. The second microwave processing system 200 can be configured to form a uniform plasma within the process space 215.

該前視圖顯示具有第一EM能量調整空間269a於其中的第一腔組件268a的切開圖，且第一腔組件268a可包含第一腔壁265a、第二腔壁266a、至少一個第三腔壁267a、及一個以上的額外腔壁（未顯示）。舉例而言，第一腔組件268a可利用第一腔壁265a連結至第一介面組件212a。該前視圖亦顯示具有第二EM能量調整空間269b於其中的第二腔組件268b的切開視圖，且該第二腔組件268b可包含第一腔壁265b、第二腔壁266b、至少一個第三腔壁267b、及一個以上額外的腔壁（未顯示）。舉例來說，第二腔組件268b可利用第一腔壁265b連結至第二介面組件212b。The front view shows a cutaway view of the first chamber assembly 268a having the first EM energy adjustment space 269a therein, and the first chamber assembly 268a can include a first chamber wall 265a, a second chamber wall 266a, and at least one third chamber wall 267a, and more than one additional lumen wall (not shown). For example, the first chamber assembly 268a can be coupled to the first interface assembly 212a using the first lumen wall 265a. The front view also shows a cutaway view of the second chamber assembly 268b having the second EM energy adjustment space 269b therein, and the second chamber assembly 268b can include a first chamber wall 265b, a second chamber wall 266b, at least a third Cavity wall 267b, and more than one additional lumen wall (not shown). For example, the second chamber assembly 268b can be coupled to the second interface assembly 212b using the first lumen wall 265b.

在圖2B中顯示第一組電漿調整桿（270a-270d）的局部前視圖（虛線視圖）、第一組電漿調整板（261a-261d）的局部前視圖（虛線視圖）、第二組電漿調整桿（270e-270h）的局部前視圖（虛線視圖）、及第二組電漿調整板（261e-261h）的局部前視圖（虛線視圖）。A partial front view (dashed view) of the first set of plasma adjustment bars (270a-270d), a partial front view (dashed view) of the first set of plasma adjustment plates (261a-261d), a second set are shown in Figure 2B. A partial front view (dashed view) of the plasma adjustment rods (270e-270h) and a partial front view (dashed view) of the second set of plasma adjustment plates (261e-261h).

第一組電漿調整桿（270a-270d）與第一組電漿調整板（261a-261d）可具有與其相關聯的第一組x/y平面偏移（x_2a-d ），且該第一組x/y平面偏移（x_2a-d ）可變化於約10 mm到約100 mm。第一組電漿調整桿（270a-270d）與第一組電漿調整板（261a-261d）可具有與其相關聯的第一組x/z平面偏移（z_1a-d ），且該第一組x/z平面偏移（z_1a-d ）可變化於約100 mm到約400 mm。The first set of plasma adjustment rods (270a-270d) and the first set of plasma adjustment plates (261a-261d) can have a first set of x/y plane offsets (x _2a-d ) associated therewith, and the A set of x/y plane offsets (x _2a-d ) can vary from about 10 mm to about 100 mm. The first set of plasma adjustment rods (270a-270d) and the first set of plasma adjustment plates (261a-261d) can have a first set of x/z plane offsets (z _1a-d ) associated therewith, and the A set of x/z plane offsets (z _1a-d ) can vary from about 100 mm to about 400 mm.

第二組電漿調整桿（270e-270h）與第二組電漿調整板（261f-261h）可具有與其相關聯的第二組x/y平面偏移（x_2e-h ），且該第二組x/y平面偏移（x_2e-h ）可變化於約10 mm到約100 mm。第二組電漿調整桿（270e-270h）與第二組電漿調整板（261e-261h）可具有與其相關聯的第二組x/z平面偏移（z_1e-h ），且該第二組x/z平面偏移（z_1e-h ）可變化於約100 mm到約400 mm。The second set of plasma adjustment rods (270e-270h) and the second set of plasma adjustment plates (261f-261h) may have a second set of x/y plane offsets (x _2e-h ) associated therewith, and the The two sets of x/y plane offsets (x _2e-h ) can vary from about 10 mm to about 100 mm. The second set of plasma adjustment rods (270e-270h) and the second set of plasma adjustment plates (261e-261h) may have a second set of x/z plane offsets (z _1e-h ) associated therewith, and the The two sets of x/z plane offsets (z _1e-h ) can vary from about 100 mm to about 400 mm.

圖2B顯示第二微波處理系統200可包含連結至腔室壁212的一個以上電漿感測器206，以取得第一電漿資料。此外，第二微波處理系統200可建構成用以處理200 mm基板、300 mm基板、或更大尺寸的基板。此外，可分別配置圓柱形、正方形和矩形腔室，使得第二微波處理系統200可建構成用以處理圓形、正方形或矩形的基板、晶圓、或LCD，無論其為熟習此技藝者所知的何種尺寸。因此，雖然將就半導體基板的處理對本發明的實施態樣加以描述，但本發明係不僅限定於此。2B shows that the second microwave processing system 200 can include more than one plasma sensor 206 coupled to the chamber wall 212 to obtain the first plasma material. Additionally, the second microwave processing system 200 can be constructed to process a 200 mm substrate, a 300 mm substrate, or a larger sized substrate. In addition, cylindrical, square, and rectangular chambers can be separately configured such that the second microwave processing system 200 can be constructed to process a circular, square, or rectangular substrate, wafer, or LCD, whether it is familiar to those skilled in the art. Know which size. Therefore, although the embodiment of the present invention will be described with respect to the processing of the semiconductor substrate, the present invention is not limited thereto.

如圖2B所示，第一EM來源250a可耦合至第一腔組件268a，且第二EM來源250b可耦合至第二腔組件268b。第一EM來源250a可耦合至第一匹配網路252a，且第一匹配網路252a可耦合至第一耦合網路254a。第二EM來源250b可耦合至第二匹配網路252b，且第二匹配網路252b可耦合至第二耦合網路254b。或者是，可使用複數匹配網路（未顯示）或複數耦合網路（未顯示）。As shown in FIG. 2B, the first EM source 250a can be coupled to the first cavity assembly 268a and the second EM source 250b can be coupled to the second cavity assembly 268b. The first EM source 250a can be coupled to the first matching network 252a, and the first matching network 252a can be coupled to the first coupling network 254a. The second EM source 250b can be coupled to the second matching network 252b, and the second matching network 252b can be coupled to the second coupling network 254b. Alternatively, a complex matching network (not shown) or a complex coupling network (not shown) may be used.

第一耦合網路254a可被可移除自如地連結至第一腔組件268a，而第一腔組件268a可被可移除自如地連結至製程腔室210的第一介面組件212a的上部。第一耦合網路254a可用以在第一腔組件268a之中提供微波能量至第一EM能量調整空間269a。第二耦合網路254b可被可移除自如地連結至第二腔組件268b，而第二腔組件268b可被可移除自如地連結至製程腔室210的第二介面組件212b的上部。第二耦合網路254b可用以在第二腔組件268b之中提供額外的微波能量至第二EM能量調整空間269b。或者，可使用其他的EM耦合構造。The first coupling network 254a can be removably coupled to the first chamber assembly 268a, and the first chamber assembly 268a can be removably coupled to the upper portion of the first interface assembly 212a of the process chamber 210. The first coupling network 254a can be used to provide microwave energy to the first EM energy adjustment space 269a within the first cavity assembly 268a. The second coupling network 254b can be removably coupled to the second chamber assembly 268b, and the second chamber assembly 268b can be removably coupled to the upper portion of the second interface assembly 212b of the process chamber 210. The second coupling network 254b can be used to provide additional microwave energy to the second EM energy conditioning space 269b within the second chamber assembly 268b. Alternatively, other EM coupling configurations can be used.

如圖2B所示，控制器295可連結296至EM來源（250a、250b）、匹配網路（252a、252b）、耦合網路（254a、254b）、及腔組件（268a、268b），並且控制器295可利用製程配方以建立、控制、及最佳化EM來源（250a、250b）、匹配網路（252a、252b）、耦合網路（254a、254b）、及腔組件（268a、268b），以控制製程空間215之內的電漿均勻性。舉例而言，EM來源（250a、250b）可操作於從約500 MHz到約5000 MHz的頻率。此外，控制器295可連結296至電漿感測器206和製程感測器207，並且控制器295可利用製程配方建立、控制、和最佳化來自電漿感測器206和製程感測器207的資料，以控制製程空間215之內的電漿均勻性。As shown in FIG. 2B, controller 295 can couple 296 to EM sources (250a, 250b), matching networks (252a, 252b), coupling networks (254a, 254b), and cavity components (268a, 268b), and control The processor 295 can utilize process recipes to establish, control, and optimize EM sources (250a, 250b), matching networks (252a, 252b), coupling networks (254a, 254b), and cavity components (268a, 268b), To control plasma uniformity within the process space 215. For example, the EM source (250a, 250b) can operate at frequencies from about 500 MHz to about 5000 MHz. In addition, controller 295 can couple 296 to plasma sensor 206 and process sensor 207, and controller 295 can utilize process recipes to establish, control, and optimize from plasma sensor 206 and process sensor 207 data to control plasma uniformity within process space 215.

此外，控制器295可連結296至氣體供給系統240、氣體供給次組件241、及氣體噴淋頭243。舉例而言，氣體供給系統240、氣體供給次組件241、及氣體噴淋頭243可建構成用以將一種以上製程氣體導入製程空間215，且可包含流量控制和/或流量量測元件。Additionally, controller 295 can couple 296 to gas supply system 240, gas supply subassembly 241, and gas showerhead 243. For example, gas supply system 240, gas supply subassembly 241, and gas showerhead 243 can be configured to direct more than one process gas into process space 215 and can include flow control and/or flow measurement components.

在乾式電漿蝕刻期間，製程氣體可包含蝕刻劑、鈍化劑、或惰性氣體、或其二者以上的組合。舉例而言，當電漿蝕刻例如矽氧化物（SiO_x ）或矽氮化物（Si_x N_y ）之介電膜時，電漿蝕刻氣體成份通常包含氟碳基化學品（C_x F_y ），例如C₄ F₈ 、C₅ F₈ 、C₃ F₆ 、C₄ F₆ 、CF₄ 等其中至少一者，且/或可包含氟烴基化學品（C_x H_y F_z ），例如CHF₃ 、CH₂ F₂ 等其中至少一者，且可具有惰性氣體、氧、CO、或CO₂ 其中至少一者。此外，舉例來說，當蝕刻多晶矽之時，電漿蝕刻氣體成份一般包含含鹵素氣體，例如HBr、Cl₂ 、NF₃ 、或SF₆ 、或其二者以上組合，且可包含氟烴基化學品（C_x H_y F_z ），例如CHF₃ 、CH₂ F₂ 等其中至少一者，及惰性氣體、氧、CO、或CO₂ 其中至少一者、或其二者以上。在電漿輔助沉積期間，製程氣體可包含膜形成前驅物、還原氣體、或惰性氣體、或其二者以上之組合。During dry plasma etching, the process gas may comprise an etchant, a passivating agent, or an inert gas, or a combination of two or more thereof. For example, when a plasma etches a dielectric film such as tantalum oxide (SiO _x ) or tantalum nitride (Si _x N _y ), the plasma etching gas component usually contains a fluorocarbon-based chemical (C _x F _y ). For example, at least one of C ₄ F ₈ , C ₅ F ₈ , C ₃ F ₆ , C ₄ F ₆ , CF _{4 ,} etc., and/or may comprise a fluorocarbon based chemical (C _x H _y F _z ), such as CHF ₃ , at least one of CH ₂ F ₂ and the like, and may have at least one of an inert gas, oxygen, CO, or CO ₂ . Further, for example, when etching a polysilicon, the plasma etching gas component generally comprises a halogen-containing gas such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or a combination of two or more thereof, and may include a fluorocarbon-based chemical. (C _x H _y F _z ), for example, at least one of CHF ₃ , CH ₂ F _{2 ,} and the like, and at least one of inert gas, oxygen, CO, or CO ₂ , or two or more thereof. During plasma assisted deposition, the process gas may comprise a film forming precursor, a reducing gas, or an inert gas, or a combination of two or more thereof.

如圖2B所示，第二微波處理系統200可包含壓力控制系統290及埠291，其連結至製程腔室210且建構成用以排空製程腔室210並控制製程腔室210之內的壓力。此外，第二微波處理系統200可包含基板固持器220，用於將基板205安裝在製程空間215之中。As shown in FIG. 2B, the second microwave processing system 200 can include a pressure control system 290 and a crucible 291 coupled to the process chamber 210 and configured to evacuate the process chamber 210 and control the pressure within the process chamber 210. . Additionally, the second microwave processing system 200 can include a substrate holder 220 for mounting the substrate 205 in the process space 215.

第二微波處理系統200的前視圖包含第一腔控制組件245a的局部前視圖，其被顯示連結至第一腔調整板246a的前視圖。第一腔控制組件245a和第一腔調整板246a可具有與其關聯的第一x/z平面偏移（z_1aa ），且該第一x/z平面偏移（z_1aa ）可變化於約1 mm到約10 mm。The front view of the second microwave processing system 200 includes a partial front view of the first cavity control assembly 245a that is shown coupled to the front view of the first cavity adjustment plate 246a. The first cavity control assembly 245a and the first cavity adjustment plate 246a can have a first x/z plane offset (z _1aa ) associated _therewith , and the first x/z plane offset (z _1aa ) can vary from about 1 Mm to about 10 mm.

第一腔控制組件245a可用以在第一EM能量調整空間269a之內移動247a第一腔調整板246a腔調整距離248a。控制器295可連結296至腔控制組件245a，且控制器295可使用製程配方來建立、控制、及最佳化腔調整距離248a，以即時控制和維持在製程空間215之內的電漿均勻性。舉例而言，腔調整距離248a可變化於約0.01 mm到約10 mm，且腔調整距離248a可為波長相依的，且可變化於約（λ/4）到約（10λ）。The first chamber control assembly 245a can be used to move 247a within the first EM energy adjustment space 269a to adjust the distance 248a by the first chamber adjustment plate 246a. The controller 295 can be coupled 296 to the chamber control assembly 245a, and the controller 295 can use the process recipe to establish, control, and optimize the chamber adjustment distance 248a to instantly control and maintain plasma uniformity within the process space 215. . For example, the cavity adjustment distance 248a can vary from about 0.01 mm to about 10 mm, and the cavity adjustment distance 248a can be wavelength dependent and can vary from about (λ/4) to about (10λ).

此外，第二微波處理系統200的前視圖包含第二腔控制組件245b的局部前視圖，其被顯示連結至第二腔調整板246b的前視圖。第二腔控制組件245b和第二腔調整板246b可具有與其關聯的第二x/z平面偏移（z_1ba ），且該第二x/z平面偏移（z_1ba ）可變化於約1 mm到約10 mm。Additionally, the front view of the second microwave processing system 200 includes a partial front view of the second cavity control assembly 245b that is shown coupled to the front view of the second cavity adjustment plate 246b. The second cavity control component 245b and the second cavity adjustment plate 246b can have a second x/z plane offset (z _1ba ) associated _therewith , and the second x/z plane offset (z _1ba ) can vary from about 1 Mm to about 10 mm.

第二腔控制組件245b可用以在第二EM能量調整空間269b之內移動247b第二腔調整板246b第二腔調整距離248b。控制器295可連結296至第二腔控制組件245b，且控制器295可使用製程配方來建立、控制、及最佳化第二腔調整距離248b，以即時控制和維持在製程空間215之內的電漿均勻性。舉例而言，第二腔調整距離248b可變化於約0.01 mm到約10 mm，且第二腔調整距離248b可為波長相依的，且可變化於約（λ/4）到約（10λ）。The second chamber control assembly 245b can be used to move 247b the second chamber adjustment plate 246b within the second EM energy adjustment space 269b by the second chamber adjustment distance 248b. The controller 295 can be coupled 296 to the second chamber control assembly 245b, and the controller 295 can use the process recipe to establish, control, and optimize the second chamber adjustment distance 248b for immediate control and maintenance within the process space 215. Plasma uniformity. For example, the second cavity adjustment distance 248b can vary from about 0.01 mm to about 10 mm, and the second cavity adjustment distance 248b can be wavelength dependent and can vary from about (λ/4) to about (10λ).

圖2C顯示在第二微波處理系統200中第二製程腔室210的局部切開側視圖。該側視圖顯示連結至第一介面組件212a和第二介面組件212b的複數腔室壁212的y/z平面視圖，藉此建立在製程腔室210之中的製程空間215的局部切開側視圖。第二微波處理系統200可建構成用以在製程空間215之中形成電漿。2C shows a partial cutaway side view of the second process chamber 210 in the second microwave processing system 200. The side view shows a y/z plan view of the plurality of chamber walls 212 coupled to the first interface assembly 212a and the second interface assembly 212b, thereby establishing a partially cutaway side view of the process space 215 in the process chamber 210. The second microwave processing system 200 can be configured to form a plasma in the process space 215.

在圖2C中顯示在第一腔組件268a中的第一EM能量調整空間269a的局部側視圖與在第二腔組件268b中的第二EM能量調整空間269b的局部側視圖。在圖2C中顯示第一組電漿調整桿（270a-270d）的局部側視圖、第一組電漿調整板（261a-261d）的局部側視圖、第二組電漿調整桿（270e-270h）的局部側視圖、及第二組電漿調整板（261e-261h）的局部側視圖。A partial side view of the first EM energy adjustment space 269a in the first chamber assembly 268a and a partial side view of the second EM energy adjustment space 269b in the second chamber assembly 268b are shown in Figure 2C. A partial side view of the first set of plasma adjustment rods (270a-270d), a partial side view of the first set of plasma adjustment plates (261a-261d), and a second set of plasma adjustment rods (270e-270h) are shown in Figure 2C. A partial side view of the) and a partial side view of the second set of plasma conditioning plates (261e-261h).

在圖2C中亦顯示第一組隔離組件（264a、264b、264c、及264d）與第二組隔離組件（264e、264f、264g、及264h）的側視圖。舉例來說，第一組隔離組件（264a、264b、264c、及264d）可用以將第一組電漿調整桿﹛（270a、270b、270c、及270d）和（275a、275b、275c、及275d）﹜可移除自如地連結至第一介面組件212a。第一組隔離組件（264a、264b、264c、及264d）每一者可被可移除自如地連結至第一介面組件212a。此外，第二組隔離組件（264e、264f、264g、及264h）可用以將第二組電漿調整桿﹛（270e、270f、270g、及270h）和（275e、275f、275g、及275h）﹜可移除自如地連結至第二介面組件212b。第二組隔離組件（264e、264f、264g、及264h）每一者可被可移除自如地連結至第二介面組件212b。A side view of the first set of isolation components (264a, 264b, 264c, and 264d) and the second set of isolation components (264e, 264f, 264g, and 264h) is also shown in FIG. 2C. For example, the first set of isolation components (264a, 264b, 264c, and 264d) can be used to set the first set of plasma adjustment rods {(270a, 270b, 270c, and 270d) and (275a, 275b, 275c, and 275d) )} is detachably coupled to the first interface component 212a. The first set of isolation components (264a, 264b, 264c, and 264d) can each be removably coupled to the first interface component 212a. In addition, a second set of isolation components (264e, 264f, 264g, and 264h) can be used to adjust the second set of plasma adjustment rods {(270e, 270f, 270g, and 270h) and (275e, 275f, 275g, and 275h)} Removably coupled to the second interface component 212b. The second set of isolation components (264e, 264f, 264g, and 264h) can each be removably coupled to the second interface component 212b.

如圖2C所示，第一組電漿調整板（261a、261b、261c、及261d）可連結至第一組控制組件（260a、260b、260c、及260d），且第一組控制組件（260a、260b、260c、及260d）可用以在第一EM能量調整空間269a之內，將第一組電漿調整板（261a、261b、261c、及261d）相對於EM調整部（275a、275b、275c、及275d）移動（263a、263b、263c、及263d）第一組EM調整距離（277a、277b、277c、及277d）。此外，第二組電漿調整板（261e、261f、261g、及261h）可連結至第二組控制組件（260e、260f、260g、及260h），且第二組控制組件（260e、260f、260g、及260h）可用以在第二EM能量調整空間269b之內，將第二組電漿調整板（261e、261f、261g、及261h）相對於EM調整部（275e、275f、275g、及275h）移動（263e、263f、263g、及263h）第二組EM調整距離（277e、277f、277g、及277h）。As shown in FIG. 2C, the first set of plasma adjustment plates (261a, 261b, 261c, and 261d) can be coupled to the first set of control components (260a, 260b, 260c, and 260d), and the first set of control components (260a) , 260b, 260c, and 260d) may be used to move the first set of plasma adjustment plates (261a, 261b, 261c, and 261d) relative to the EM adjustment portion (275a, 275b, 275c) within the first EM energy adjustment space 269a. And 275d) move (263a, 263b, 263c, and 263d) the first set of EM adjustment distances (277a, 277b, 277c, and 277d). In addition, the second set of plasma adjustment plates (261e, 261f, 261g, and 261h) can be coupled to the second set of control components (260e, 260f, 260g, and 260h), and the second set of control components (260e, 260f, 260g) And 260h) may be used to move the second set of plasma adjustment plates (261e, 261f, 261g, and 261h) relative to the EM adjustment portions (275e, 275f, 275g, and 275h) within the second EM energy adjustment space 269b. The second set of EM adjustment distances (277e, 277f, 277g, and 277h) are moved (263e, 263f, 263g, and 263h).

第一組控制組件（260a、260b、260c、及260d）可連結296至控制器295，且控制器295可使用製程配方來建立、控制、和最佳化第一組EM調整距離（277a、277b、277c、及277d），以控制在製程空間215之內的電漿均勻性。此外，第二組控制組件（260e、260f、260g、及260h）可連結296至控制器295，且控制器295可使用製程配方來建立、控制、和最佳化第二組EM調整距離（277e、277f、277g、及277h），以控制在製程空間215之內的電漿均勻性。The first set of control components (260a, 260b, 260c, and 260d) can be coupled 296 to the controller 295, and the controller 295 can use the process recipe to establish, control, and optimize the first set of EM adjustment distances (277a, 277b) , 277c, and 277d) to control plasma uniformity within the process space 215. Additionally, a second set of control components (260e, 260f, 260g, and 260h) can be coupled 296 to controller 295, and controller 295 can use process recipes to establish, control, and optimize a second set of EM adjustment distances (277e) , 277f, 277g, and 277h) to control plasma uniformity within the process space 215.

控制器295可連結296至EM來源（250a、250b）、匹配網路（252a、252b）、耦合網路（254a、254b）、及腔組件（268a、268b），且控制器295可利用製程配方來建立、控制、及最佳化EM來源（250a、250b）、匹配網路（252a、252b）、耦合網路（254a、254b）、及腔組件（268a、268b），以控制在製程空間215之內的電漿均勻性。舉例來說，EM來源（250a、250b）可操作於約500 MHz到約5000 MHz之頻率。此外，控制器295可連結296至電漿感測器206、製程感測器207、及腔感測器（208a及208b），且控制器295可利用製程配方來建立、控制、及最佳化來自電漿感測器206、製程感測器207、及腔感測器（208a及208b）的資料，以控制在製程空間215之內的電漿均勻性。Controller 295 can couple 296 to EM sources (250a, 250b), matching networks (252a, 252b), coupling networks (254a, 254b), and cavity components (268a, 268b), and controller 295 can utilize process recipes To establish, control, and optimize EM sources (250a, 250b), matching networks (252a, 252b), coupling networks (254a, 254b), and cavity components (268a, 268b) for control in process space 215 Plasma uniformity within. For example, the EM source (250a, 250b) can operate at frequencies from about 500 MHz to about 5000 MHz. In addition, the controller 295 can connect 296 to the plasma sensor 206, the process sensor 207, and the cavity sensors (208a and 208b), and the controller 295 can be established, controlled, and optimized using the process recipe. Information from plasma sensor 206, process sensor 207, and cavity sensors (208a and 208b) to control plasma uniformity within process space 215.

該側視圖描述製程腔室210，其具有在y/z平面之與其相關聯的全寬（y_T ）和全高（z_T ）。舉例來說，該全寬（y_T ）可變化於約50 mm到約500 mm，且該全高（z_T ）可變化於約50 mm到約500 mm。This side view depicts the process chamber 210 having its full width (y _T ) and full height (z _T ) associated with it in the y/z plane. For example, the full width (y _T ) can vary from about 50 mm to about 500 mm, and the full height (z _T ) can vary from about 50 mm to about 500 mm.

圖3A顯示在第三微波處理系統300中第三製程腔室310的局部切開俯視圖。該俯視圖顯示形成第三製程腔室310的第一介面組件312a、第二介面組件312b、及連結至第一介面組件312a和第二介面組件312b的複數額外的腔室壁312的x/y平面圖。舉例來說，腔室壁312可具有與其相關聯的壁厚度（t），且該壁厚度（t）可變化於約1 mm到約5 mm。第一介面組件312a可具有與其相關聯的第一介面厚度（t_i1 ），且該第一介面厚度（t_i1 ）可變化於約1 mm到約10 mm。第二介面組件312b可具有與其相關聯的第二介面厚度（t_i2 ），且該第二介面厚度（t_i2 ）可變化於約1 mm到約10 mm。製程空間315可具有與其相關聯的長度（x_T ），且該長度（x_T ）可變化於約10 mm到約500 mm。FIG. 3A shows a partial cutaway plan view of the third process chamber 310 in the third microwave processing system 300. The top view shows the x/y plan view of the first interface component 312a, the second interface component 312b forming the third process chamber 310, and the plurality of additional chamber walls 312 joined to the first interface component 312a and the second interface component 312b. . For example, the chamber wall 312 can have a wall thickness (t) associated therewith, and the wall thickness (t) can vary from about 1 mm to about 5 mm. The first interface component 312a can have a first interface thickness (t _i1 ) associated therewith, and the first interface thickness (t _i1 ) can vary from about 1 mm to about 10 mm. The second interface component 312b can have a second interface thickness (t _i2 ) associated therewith, and the second interface thickness (t _i2 ) can vary from about 1 mm to about 10 mm. The process space 315 can have a length (x _T ) associated therewith, and the length (x _T ) can vary from about 10 mm to about 500 mm.

第三微波處理系統300的俯視圖顯示具有第一EM能量調整空間369a於其中的第一腔組件368a的切開視圖，且該第一腔組件368a可包含第一腔壁365a、第二腔壁366a、至少一個第三腔壁367a、及一個以上額外的腔壁（未顯示）。舉例來說，第一腔組件368a可利用第一腔壁365a連結至第一介面組件312a，並且壁（365a、366a、及367a）可包含介電材料且可具有與其相關聯的壁厚度（t_a ），而壁厚度（t_a ）可變化於自約1 mm到約5 mm。此外，第一EM能量調整空間369a可具有與其相關聯的第一長度（x_T1a ）及第一寬度（y_1a ），第一長度（x_T1a ）可變化於自約10 mm到約500 mm，且第一寬度（y_1a ）可變化於自約5 mm到約50 mm。The top view of the third microwave processing system 300 shows a cutaway view of the first chamber assembly 368a having the first EM energy adjustment space 369a therein, and the first chamber assembly 368a can include a first chamber wall 365a, a second chamber wall 366a, At least one third lumen wall 367a, and one or more additional lumen walls (not shown). For example, the first cavity assembly 368a can be coupled to the first interface component 312a using the first cavity wall 365a, and the walls (365a, 366a, and 367a) can comprise a dielectric material and can have a wall thickness associated therewith (t _a ), and the wall thickness (t _a ) can vary from about 1 mm to about 5 mm. In addition, the first EM energy adjustment space 369a may have a first length (x _T1a ) and a first width (y _1a ) associated therewith, and the first length (x _T1a ) may vary from about 10 mm to about 500 mm. And the first width (y _1a ) can vary from about 5 mm to about 50 mm.

第三微波處理系統300的俯視圖亦顯示具有第二EM能量調整空間369b於其中的第二腔組件368b的切開視圖，且該第二腔組件368b可包含第一腔壁365b、第二腔壁366b、至少一個第三腔壁367b、及一個以上額外的腔壁（未顯示）。舉例來說，第二腔組件368b可利用第一腔壁365b連結至第二介面組件312b，並且壁（365b、366b、及367b）可包含介電材料且可具有與其相關聯的壁厚度（t_b ），而壁厚度（t_b ）可變化於自約1 mm到約5 mm。此外，第二EM能量調整空間369b可具有與其相關聯的第二長度（x_T1b ）及第二寬度（y_1b ），第二長度（x_T1b ）可變化於自約10 mm到約500 mm，且第二寬度（y_1b ）可變化於自約5 mm到約50 mm。The top view of the third microwave processing system 300 also shows a cutaway view of the second chamber assembly 368b having the second EM energy adjustment space 369b therein, and the second chamber assembly 368b can include a first chamber wall 365b, a second chamber wall 366b At least one third lumen wall 367b, and one or more additional lumen walls (not shown). For example, the second cavity assembly 368b can be coupled to the second interface component 312b using the first cavity wall 365b, and the walls (365b, 366b, and 367b) can comprise a dielectric material and can have a wall thickness associated therewith (t _b ), and the wall thickness (t _b ) can vary from about 1 mm to about 5 mm. In addition, the second EM energy adjustment space 369b may have a second length (x _T1b ) and a second width (y _1b ) associated therewith, and the second length (x _T1b ) may vary from about 10 mm to about 500 mm. And the second width (y _1b ) can vary from about 5 mm to about 50 mm.

在若干例示系統中，一第一組隔離組件（364a、364b、及364c）可被可移除自如地連結至第一介面組件312a，且可建構成用以將製程空間315隔離於第一EM能量調整空間369a。該第一組隔離組件（364a、364b、及364c）可用以將第一組電漿調整桿﹛（370a、370b、及370c）和（375a、375b、及375c）﹜可移除自如地連結至第一介面組件312a。舉例而言，第一組電漿調整部（370a、370b、及370c）可配置於製程空間315之中，且第一組EM調整部（375a、375b、及375c）可配置於第一EM能量調整空間369a之內。In several exemplary systems, a first set of isolation components (364a, 364b, and 364c) can be removably coupled to the first interface component 312a and can be configured to isolate the process space 315 from the first EM. Energy adjustment space 369a. The first set of isolation assemblies (364a, 364b, and 364c) can be used to removably couple the first set of plasma adjustment rods {(370a, 370b, and 370c) and (375a, 375b, and 375c)} to First interface component 312a. For example, the first set of plasma adjustment sections (370a, 370b, and 370c) may be disposed in the process space 315, and the first set of EM adjustment sections (375a, 375b, and 375c) may be disposed on the first EM energy Adjust the space 369a.

第二組隔離組件（364d、364e、及364f）可被可移除自如地連結至第二介面組件312b，且可建構成用以將製程空間315隔離於第二EM能量調整空間369b。該第二組隔離組件（364d、364e、及364f）可用以將第二組電漿調整桿﹛（370d、370e、及370f）和（375d、375e、及375f）﹜可移除自如地連結至第二介面組件312b。舉例而言，第二組電漿調整部（370d、370e、及370f）可配置於製程空間315之中，且第二組EM調整部（375d、375e、及375f）可配置於第二EM能量調整空間369b之內。The second set of isolation components (364d, 364e, and 364f) can be removably coupled to the second interface component 312b and can be configured to isolate the process space 315 from the second EM energy adjustment space 369b. The second set of isolation assemblies (364d, 364e, and 364f) can be used to removably couple the second set of plasma adjustment rods {(370d, 370e, and 370f) and (375d, 375e, and 375f)} to Second interface component 312b. For example, the second set of plasma adjustment sections (370d, 370e, and 370f) may be disposed in the process space 315, and the second set of EM adjustment sections (375d, 375e, and 375f) may be disposed on the second EM energy Adjust the space 369b.

仍然參考圖3A，第一電漿調整桿（370a, 375a）可包含介電材料，且可具有第一電漿調整部370a，其可於利用（x_2a ）加以定義的第一位置延伸第一電漿調整距離371a進入製程空間315。第一電漿調整距離371a可變化於自約10 mm到約400 mm。Still referring to FIG. 3A, the first plasma adjustment rod (370a, 375a) may comprise a dielectric material and may have a first plasma adjustment portion 370a that may extend first at a first position defined by ( _x2a ) The plasma adjustment distance 371a enters the process space 315. The first plasma adjustment distance 371a can vary from about 10 mm to about 400 mm.

第一EM耦合區域362a可在建立於第一腔組件368a之中的第一EM能量調整空間369a之內，於由第一腔壁365a之第一EM耦合距離376a處加以建立，並且第一EM調整部375a可延伸進入第一EM耦合區域362a。第一EM調整部375a可自第一EM耦合區域362a取得第一微波能量，且第一微波能量可利用第一電漿調整部370a於第一位置（x_2a ）傳送至製程空間315。第一EM耦合區域362a可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第一EM耦合距離376a可變化於約0.01 mm到約10 mm，並且第一EM耦合距離376a可為波長相依且可變化於約（λ/4）到約（10λ）。The first EM coupling region 362a can be established within the first EM energy adjustment space 369a established in the first cavity assembly 368a at the first EM coupling distance 376a of the first cavity wall 365a, and the first EM The adjustment portion 375a can extend into the first EM coupling region 362a. The first EM adjustment portion 375a can obtain the first microwave energy from the first EM coupling region 362a, and the first microwave energy can be transmitted to the process space 315 at the first position (x _2a ) by the first plasma adjustment portion 370a. The first EM coupling region 362a can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the first EM coupling distance 376a can vary from about 0.01 mm to about 10 mm, and the first EM coupling distance 376a can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第一電漿調整板361a可包含介電材料，可連結至第一控制組件360a，其可用以在第一EM能量調整空間369a之內將該第一電漿調整板361a相對於第一電漿調整桿（370a, 375a）的第一EM調整部375a移動363a一第一EM調整距離377a。該第一控制組件360a和該第一電漿調整板361a可用以將自第一EM耦合區域362a耦合至第一電漿調整桿（370a, 375a）的第一EM調整部375a之微波能量予以最佳化。舉例來說，第一EM調整距離377a可建立於第一EM能量調整空間369a內之第一EM調整部375a和第一電漿調整板361a之間，且第一EM調整距離377a可變化於約0.01 mm到約1 mm。The first plasma conditioning plate 361a can include a dielectric material that can be coupled to the first control component 360a that can be used to move the first plasma conditioning plate 361a relative to the first plasma within the first EM energy conditioning space 369a The first EM adjustment portion 375a of the adjustment lever (370a, 375a) moves 363a to a first EM adjustment distance 377a. The first control component 360a and the first plasma adjustment plate 361a can be used to couple the microwave energy of the first EM adjustment portion 375a coupled from the first EM coupling region 362a to the first plasma adjustment lever (370a, 375a). Jiahua. For example, the first EM adjustment distance 377a may be established between the first EM adjustment portion 375a and the first plasma adjustment plate 361a in the first EM energy adjustment space 369a, and the first EM adjustment distance 377a may vary From 0.01 mm to about 1 mm.

第一電漿調整桿（370a, 375a）可具有與其相關聯的第一直徑（d_1a ），且第一直徑（d_1a ）可變化於約0.01 mm到約1 mm。第一電漿調整板361a可具有與其相關聯的第一直徑（D_1a ），且第一直徑（D_1a ）可變化於約1 mm到約10 mm。第一EM耦合區域362a、第一控制組件360a、及第一電漿調整板361a可具有與其相關聯的第一x/y平面偏移（x_1a ），且第一x/y平面偏移（x_1a ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第一控制組件360a可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1a ）。The first diameter (d _1a) a first plasma adjustment lever (370a, 375a) may have associated therewith, and the first diameter (d _1a) may vary from about 0.01 mm to about 1 mm. The first plasma conditioning plate 361a can have a first diameter (D _1a ) associated therewith, and the first diameter (D _1a ) can vary from about 1 mm to about 10 mm. The first EM coupling region 362a, the first control component 360a, and the first plasma conditioning plate 361a can have a first x/y plane offset (x _1a ) associated therewith, and the first x/y plane offset ( x _1a ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The first control component 360a can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1a ) from about 1 mm to about 5 mm.

第二電漿調整桿（370b, 375b）可具有第二電漿調整部370b，其可於利用（x_2b ）加以定義的第二位置延伸第二電漿調整距離371b進入製程空間315。舉例來說，第二電漿調整距離371b可變化於約10 mm到約400 mm。A second plasma a second position adjusting lever (370b, 375b) may have a second plasma adjusting portion 370b, which may be in use (x _2b) to be defined by adjusting the distance 371b extending into the second plasma process volume 315. For example, the second plasma adjustment distance 371b can vary from about 10 mm to about 400 mm.

第二EM耦合區域362b可在建立於第一腔組件368a之中的第一EM能量調整空間369a之內，於由第一腔壁365a之第二EM耦合距離376b處加以建立，並且第二EM調整部375b可延伸進入第二EM耦合區域362b。第二EM調整部375b可自第二EM耦合區域362b取得第二微波能量，且第二微波能量可利用第二電漿調整部370b於第二位置（x_2b ）傳送至製程空間315。第二EM耦合區域362b可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第二EM耦合距離376b可變化於約0.01 mm到約10 mm，並且第二EM耦合距離376b可為波長相依且可變化於約（λ/4）到約（10λ）。The second EM coupling region 362b can be established within the first EM energy adjustment space 369a established in the first cavity assembly 368a at the second EM coupling distance 376b of the first cavity wall 365a, and the second EM The adjustment portion 375b can extend into the second EM coupling region 362b. The second EM adjustment portion 375b can obtain the second microwave energy from the second EM coupling region 362b, and the second microwave energy can be transmitted to the process space 315 at the second position (x _2b ) by the second plasma adjustment portion 370b. The second EM coupling region 362b can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the second EM coupling distance 376b can vary from about 0.01 mm to about 10 mm, and the second EM coupling distance 376b can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第二電漿調整板361b可包含介電材料，可連結至第二控制組件360b，其可用以在第一EM能量調整空間369a之內將該第二電漿調整板361b相對於第二電漿調整桿（370b, 375b）的第二EM調整部375b移動363b一第二EM調整距離377b。該第二控制組件360b和該第二電漿調整板361b可用以將自第二EM耦合區域362b耦合至第二電漿調整桿（370b, 375b）的第二EM調整部375b之微波能量予以最佳化。舉例來說，第二EM調整距離377b可建立於第一EM能量調整空間369a內之第二EM調整部375b和第二電漿調整板361b之間，且第二EM調整距離377b可變化於約0.01 mm到約1 mm。The second plasma conditioning plate 361b can include a dielectric material that can be coupled to the second control component 360b that can be used to move the second plasma conditioning plate 361b relative to the second plasma within the first EM energy conditioning space 369a The second EM adjustment portion 375b of the adjustment lever (370b, 375b) moves 363b to a second EM adjustment distance 377b. The second control component 360b and the second plasma adjustment plate 361b can be used to couple the microwave energy of the second EM adjustment portion 375b coupled from the second EM coupling region 362b to the second plasma adjustment rod (370b, 375b). Jiahua. For example, the second EM adjustment distance 377b may be established between the second EM adjustment portion 375b and the second plasma adjustment plate 361b in the first EM energy adjustment space 369a, and the second EM adjustment distance 377b may vary From 0.01 mm to about 1 mm.

第二電漿調整桿（370b, 375b）可具有與其相關聯的第二直徑（d_1b ），且第二直徑（d_1b ）可變化於約0.01 mm到約1 mm。第二電漿調整板361b可具有與其相關聯的第二直徑（D_1b ），且第二直徑（D_1b ）可變化於約1 mm到約10 mm。第二EM耦合區域362b、第二控制組件360b、及第二電漿調整板361b可具有與其相關聯的第二x/y平面偏移（x_1b ），且第二x/y平面偏移（x_1b ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第二控制組件360b可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1b ）。The second diameter (d _1b) a second plasma adjustment lever (370b, 375b) may have associated therewith, and a second diameter (d _1b) may vary from about 0.01 mm to about 1 mm. The second plasma conditioning plate 361b can have a second diameter ( _D1b ) associated therewith, and the second diameter ( _D1b ) can vary from about 1 mm to about 10 mm. The second EM coupling region 362b, the second control component 360b, and the second plasma conditioning plate 361b may have a second x/y plane offset (x _1b ) associated therewith, and a second x/y plane offset ( x _1b ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The second control component 360b can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1b ) from about 1 mm to about 5 mm.

第三電漿調整桿（370c, 375c）可包含介電材料，且可具有第三電漿調整部370c，其可於利用（x_2c ）加以定義的第三位置延伸第三電漿調整距離371c進入製程空間315。舉例來說，第三電漿調整距離371c可變化於約10 mm到約400 mm。The third plasma adjustment rod (370c, 375c) may comprise a dielectric material and may have a third plasma adjustment portion 370c that may extend the third plasma adjustment distance 371c at a third position defined by (x _2c ) Enter the process space 315. For example, the third plasma adjustment distance 371c can vary from about 10 mm to about 400 mm.

第三EM耦合區域362c可在建立於第一腔組件368a之中的第一EM能量調整空間369a之內，於由第一腔壁365a之第三EM耦合距離376c處加以建立，並且第三EM調整部375c可延伸進入第三EM耦合區域362c。第三EM調整部375c可自第三EM耦合區域362c取得第三微波能量，且第三微波能量可利用第三電漿調整部370c於第三位置（x_2c ）傳送至製程空間315。第三EM耦合區域362c可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。第三EM耦合距離376c可變化於約0.01 mm到約10 mm，並且第三EM耦合距離376c可為波長相依且可變化於約（λ/4）到約（10λ）。The third EM coupling region 362c can be established within the first EM energy adjustment space 369a established in the first cavity assembly 368a at the third EM coupling distance 376c of the first cavity wall 365a, and the third EM The adjustment portion 375c can extend into the third EM coupling region 362c. The third EM adjusting portion 375c may obtain the third microwave energy from the third EM coupling region 362c, and the third microwave energy may be transmitted to the processing space 315 at the third position (x _2c ) by the third plasma adjusting portion 370c. The third EM coupling region 362c can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. The third EM coupling distance 376c can vary from about 0.01 mm to about 10 mm, and the third EM coupling distance 376c can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第三電漿調整板361c可包含介電材料，可連結至第三控制組件360c，其可用以在第一EM能量調整空間369a之內將該第三電漿調整板361c相對於第三電漿調整桿（370c, 375c）的第三EM調整部375c移動363c一第三EM調整距離377c。該第三控制組件360c和該第三電漿調整板361c可用以將自第三EM耦合區域362c耦合至第三電漿調整桿（370c, 375c）的第三EM調整部375c之微波能量予以最佳化。舉例來說，第三EM調整距離377c可建立於第一EM能量調整空間369a內之第三EM調整部375c和第三電漿調整板361c之間，且第三EM調整距離377c可變化於約0.01 mm到約1 mm。The third plasma adjusting plate 361c may include a dielectric material coupled to the third control component 360c, which may be used to compare the third plasma adjusting plate 361c with respect to the third plasma within the first EM energy adjusting space 369a. The third EM adjustment portion 375c of the adjustment lever (370c, 375c) moves 363c to a third EM adjustment distance 377c. The third control component 360c and the third plasma adjustment plate 361c can be used to maximize the microwave energy of the third EM adjustment portion 375c coupled from the third EM coupling region 362c to the third plasma adjustment lever (370c, 375c). Jiahua. For example, the third EM adjustment distance 377c may be established between the third EM adjustment portion 375c and the third plasma adjustment plate 361c in the first EM energy adjustment space 369a, and the third EM adjustment distance 377c may vary from about From 0.01 mm to about 1 mm.

第三電漿調整桿（370c, 375c）可具有與其相關聯的第三直徑（d_1c ），且第三直徑（d_1c ）可變化於約0.01 mm到約1 mm。第三電漿調整板361c可具有與其相關聯的第三直徑（D_1c ），且第三直徑（D_1c ）可變化於約1 mm到約10 mm。第三EM耦合區域362c、第三控制組件360c、及第三電漿調整板361c可具有與其相關聯的第三x/y平面偏移（x_1c ），且第三x/y平面偏移（x_1c ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。舉例來說，第三控制組件360c可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1c ）。Third diameter (d _1c) plasma third adjusting lever (370c, 375c) may have associated therewith, and a third diameter (d _1c) may vary from about 0.01 mm to about 1 mm. The third plasma conditioning plate 361c can have a third diameter (D _1c ) associated therewith, and the third diameter (D _1c ) can vary from about 1 mm to about 10 mm. The third EM coupling region 362c, the third control component 360c, and the third plasma adjustment plate 361c may have a third x/y plane offset (x _1c ) associated therewith, and a third x/y plane offset ( x _1c ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). For example, the third control assembly 360c can have a cylindrical configuration and a diameter (d _1c ) that can vary from about 1 mm to about 5 mm.

第四電漿調整桿（370d, 375d）可包含介電材料，且可具有第四電漿調整部370d，其可於利用（x_2d ）加以定義的第四位置延伸第四電漿調整距離371d進入製程空間315。舉例來說，第四電漿調整距離371d可變化於約10 mm到約400 mm。The fourth adjusting lever plasma (370d, 375d) may comprise a dielectric material, and may have a fourth portion 370d to adjust the plasma, which may be in use (x _2d) extending in a fourth position to be defined by adjusting the distance a fourth plasma 371d Enter the process space 315. For example, the fourth plasma adjustment distance 371d can vary from about 10 mm to about 400 mm.

第四EM耦合區域362d可在建立於第二腔組件368b之中的第二EM能量調整空間369b之內，於由第一腔壁365b之第四EM耦合距離376d處加以建立，並且第四EM調整部375d可延伸進入第四EM耦合區域362d。第四EM調整部375d可自第四EM耦合區域362d取得第四微波能量，且第四微波能量可利用第四電漿調整部370d於第四位置（x_2d ）傳送至製程空間315。第四EM耦合區域362d可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第四EM耦合距離376d可變化於約0.01 mm到約10 mm，並且第四EM耦合距離376d可為波長相依且可變化於約（λ/4）到約（10λ）。The fourth EM coupling region 362d can be established within the second EM energy adjustment space 369b established in the second cavity assembly 368b at the fourth EM coupling distance 376d of the first cavity wall 365b, and the fourth EM The adjustment portion 375d can extend into the fourth EM coupling region 362d. The fourth EM adjusting portion 375d may obtain the fourth microwave energy from the fourth EM coupling region 362d, and the fourth microwave energy may be transmitted to the processing space 315 at the fourth position (x _2d ) by the fourth plasma adjusting portion 370d. The fourth EM coupling region 362d can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the fourth EM coupling distance 376d can vary from about 0.01 mm to about 10 mm, and the fourth EM coupling distance 376d can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第四電漿調整板361d可包含介電材料，可連結至第四控制組件360d，其可用以在第二EM能量調整空間369b之內將該第四電漿調整板361d相對於第四電漿調整桿（370d, 375d）的第四EM調整部375d移動363d一第四EM調整距離377d。該第四控制組件360d和該第四電漿調整板361d可用以將自第四EM耦合區域362d耦合至第四電漿調整桿（370d, 375d）的第四EM調整部375d之微波能量予以最佳化。舉例來說，第四EM調整距離377d可建立於第二EM能量調整空間369b內之第四EM調整部375d和第四電漿調整板361d之間，且第四EM調整距離377d可變化於約0.01 mm到約1 mm。The fourth plasma adjusting plate 361d may include a dielectric material coupled to the fourth control component 360d, which may be used to compare the fourth plasma adjusting plate 361d with respect to the fourth plasma within the second EM energy adjusting space 369b. The fourth EM adjustment portion 375d of the adjustment lever (370d, 375d) moves 363d to a fourth EM adjustment distance 377d. The fourth control component 360d and the fourth plasma adjustment plate 361d can be used to couple the microwave energy of the fourth EM adjustment portion 375d coupled from the fourth EM coupling region 362d to the fourth plasma adjustment lever (370d, 375d). Jiahua. For example, the fourth EM adjustment distance 377d may be established between the fourth EM adjustment portion 375d and the fourth plasma adjustment plate 361d in the second EM energy adjustment space 369b, and the fourth EM adjustment distance 377d may vary from about From 0.01 mm to about 1 mm.

第四電漿調整桿（370d, 375d）可具有與其相關聯的第四直徑（d_1d ），且第四直徑（d_1d ）可變化於約0.01 mm到約1 mm。第四電漿調整板361d可具有與其相關聯的第四直徑（D_1d ），且第四直徑（D_1d ）可變化於約1 mm到約10 mm。第四EM耦合區域362d、第四控制組件360d、及第四電漿調整板361d可具有與其相關聯的第四x/y平面偏移（x_1d ），且第四x/y平面偏移（x_1d ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第四控制組件360d可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1d ）。Fourth diameter (d _1d) plasma fourth adjusting lever (370d, 375d) may have associated therewith, and a fourth diameter (d _1d) may vary from about 0.01 mm to about 1 mm. The fourth plasma adjustment plate 361d may have a fourth diameter (D _1d ) associated therewith, and the fourth diameter (D _1d ) may vary from about 1 mm to about 10 mm. The fourth EM coupling region 362d, the fourth control component 360d, and the fourth plasma adjustment plate 361d may have a fourth x/y plane offset (x _1d ) associated therewith, and a fourth x/y plane offset ( x _1d ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The fourth control component 360d can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1d ) from about 1 mm to about 5 mm.

第五電漿調整桿（370e, 375e）可包含介電材料，且可具有第五電漿調整部370e，其可於利用（x_2e ）加以定義的第五位置延伸第五電漿調整距離371e進入製程空間315。舉例來說，第五電漿調整距離371e可變化於約10 mm到約400 mm。The fifth plasma adjusting rod (370e, 375e) may include a dielectric material, and may have a fifth plasma adjusting portion 370e that may extend the fifth plasma adjusting distance 371e at a fifth position defined by (x _2e ) Enter the process space 315. For example, the fifth plasma adjustment distance 371e can vary from about 10 mm to about 400 mm.

第五EM耦合區域362e可在建立於第二腔組件368b之中的第二EM能量調整空間369b之內，於由第一腔壁365b之第五EM耦合距離376e處加以建立，並且第五EM調整部375e可延伸進入第五EM耦合區域362e。第五EM調整部375e可自第五EM耦合區域362e取得第五微波能量，且第五微波能量可利用第五電漿調整部370e於第五位置（x_2e ）傳送至製程空間315。第五EM耦合區域362e可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第五EM耦合距離376e可變化於約0.01 mm到約10 mm，並且第五EM耦合距離376e可為波長相依且可變化於約（λ/4）到約（10λ）。The fifth EM coupling region 362e can be established within the second EM energy adjustment space 369b established in the second cavity assembly 368b at the fifth EM coupling distance 376e of the first cavity wall 365b, and the fifth EM The adjustment portion 375e can extend into the fifth EM coupling region 362e. The fifth EM adjusting portion 375e can obtain the fifth microwave energy from the fifth EM coupling region 362e, and the fifth microwave energy can be transmitted to the processing space 315 at the fifth position (x _2e ) by the fifth plasma adjusting portion 370e. The fifth EM coupling region 362e can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the fifth EM coupling distance 376e can vary from about 0.01 mm to about 10 mm, and the fifth EM coupling distance 376e can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第五電漿調整板361e可包含介電材料，可連結至第五控制組件360e，其可用以在第二EM能量調整空間369b之內將該第五電漿調整板361e相對於第五電漿調整桿（370e, 375e）的第五EM調整部375e移動363e一第五EM調整距離377e。該第五控制組件360e和該第五電漿調整板361e可用以將自第五EM耦合區域362e耦合至第五電漿調整桿（370e, 375e）的第五EM調整部375e之微波能量予以最佳化。舉例來說，第五EM調整距離377e可建立於第二EM能量調整空間369b內之第五EM調整部375e和第五電漿調整板361e之間，且第五EM調整距離377e可變化於約0.01 mm到約1 mm。The fifth plasma adjusting plate 361e may include a dielectric material coupled to the fifth control component 360e, which may be used to compare the fifth plasma adjusting plate 361e with respect to the fifth plasma within the second EM energy adjusting space 369b. The fifth EM adjustment portion 375e of the adjustment lever (370e, 375e) moves 363e to a fifth EM adjustment distance 377e. The fifth control component 360e and the fifth plasma adjustment plate 361e can be used to couple the microwave energy of the fifth EM adjustment portion 375e coupled from the fifth EM coupling region 362e to the fifth plasma adjustment lever (370e, 375e). Jiahua. For example, the fifth EM adjustment distance 377e may be established between the fifth EM adjustment portion 375e and the fifth plasma adjustment plate 361e in the second EM energy adjustment space 369b, and the fifth EM adjustment distance 377e may vary from about From 0.01 mm to about 1 mm.

第五電漿調整桿（370e, 375e）可具有與其相關聯的第五直徑（d_1e ），且第五直徑（d_1e ）可變化於約0.01 mm到約1 mm。第五電漿調整板361e可具有與其相關聯的第五直徑（D_1e ），且第五直徑（D_1e ）可變化於約1 mm到約10 mm。第五EM耦合區域362e、第五控制組件360e、及第五電漿調整板361e可具有與其相關聯的第五x/y平面偏移（x_1e ），且第五x/y平面偏移（x_1e ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第五控制組件360e可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1e ）。The fifth plasma adjustment rod (370e, 375e) may have a fifth diameter (d _1e ) associated therewith, and the fifth diameter (d _1e ) may vary from about 0.01 mm to about 1 mm. The fifth plasma adjustment plate 361e may have a fifth diameter (D _1e ) associated therewith, and the fifth diameter (D _1e ) may vary from about 1 mm to about 10 mm. The fifth EM coupling region 362e, the fifth control component 360e, and the fifth plasma adjustment plate 361e may have a fifth x/y plane offset (x _1e ) associated therewith, and a fifth x/y plane offset ( x _1e ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The fifth control component 360e can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1e ) from about 1 mm to about 5 mm.

繼續參照圖3A，第六電漿調整桿（370f, 375f）可包含介電材料，且可具有第六電漿調整部370f，其可於利用（x_2f ）加以定義的第六位置延伸第六電漿調整距離371f進入製程空間315。第六電漿調整距離371f可變化於約10 mm到約400 mm。With continued reference to FIG. 3A, the sixth plasma adjustment rod (370f, 375f) may comprise a dielectric material and may have a sixth plasma adjustment portion 370f that may extend a sixth position defined by (x _2f ) The plasma adjustment distance 371f enters the process space 315. The sixth plasma adjustment distance 371f can vary from about 10 mm to about 400 mm.

第六EM耦合區域362f可在建立於第二腔組件368b之中的第二EM能量調整空間369b之內，於由第一腔壁365b之第六EM耦合距離376f處加以建立，並且第六EM調整部375f可延伸進入第六EM耦合區域362f。第六EM調整部375f可自第六EM耦合區域362f取得第六微波能量，且第六微波能量可利用第六電漿調整部370f於第六位置（x_2f ）傳送至製程空間315。第六EM耦合區域362f可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第六EM耦合距離376f可變化於約0.01 mm到約10 mm，並且第六EM耦合距離376f可為波長相依且可變化於約（λ/4）到約（10λ）。The sixth EM coupling region 362f can be established within the second EM energy adjustment space 369b established in the second cavity assembly 368b at the sixth EM coupling distance 376f of the first cavity wall 365b, and the sixth EM The adjustment portion 375f may extend into the sixth EM coupling region 362f. The sixth EM adjustment unit 375f can obtain the sixth microwave energy from the sixth EM coupling region 362f, and the sixth microwave energy can be transmitted to the process space 315 at the sixth position (x _2f ) by the sixth plasma adjustment unit 370f. The sixth EM coupling region 362f can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the sixth EM coupling distance 376f can vary from about 0.01 mm to about 10 mm, and the sixth EM coupling distance 376f can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第六電漿調整板361f可包含介電材料，且可連結至第六控制組件360f，其可用以在第二EM能量調整空間369b之內將該第六電漿調整板361f相對於第六電漿調整桿（370f, 375f）的第六EM調整部375f移動363f一第六EM調整距離377f。該第六控制組件360f和該第六電漿調整板361f可用以將自第六EM耦合區域362f耦合至第六電漿調整桿（370f, 375f）的第六EM調整部375f之微波能量予以最佳化。舉例來說，第六EM調整距離377f可建立於第二EM能量調整空間369b內之第六EM調整部375f和第六電漿調整板361f之間，且第六EM調整距離377f可變化於約0.01 mm到約1 mm。The sixth plasma adjustment plate 361f may include a dielectric material and may be coupled to the sixth control component 360f, which may be used to compare the sixth plasma adjustment plate 361f with respect to the sixth electricity within the second EM energy adjustment space 369b. The sixth EM adjustment portion 375f of the slurry adjustment lever (370f, 375f) moves 363f to a sixth EM adjustment distance 377f. The sixth control component 360f and the sixth plasma adjustment plate 361f can be used to couple the microwave energy of the sixth EM adjustment portion 375f coupled from the sixth EM coupling region 362f to the sixth plasma adjustment lever (370f, 375f). Jiahua. For example, the sixth EM adjustment distance 377f may be established between the sixth EM adjustment portion 375f and the sixth plasma adjustment plate 361f in the second EM energy adjustment space 369b, and the sixth EM adjustment distance 377f may be changed to approximately From 0.01 mm to about 1 mm.

第六電漿調整桿（370f, 375f）可具有與其相關聯的第六直徑（d_1f ），且第六直徑（d_1f ）可變化於約0.01 mm到約1 mm。第六電漿調整板361f可具有與其相關聯的第六直徑（D_1f ），且第六直徑（D_1f ）可變化於約1 mm到約10 mm。第六EM耦合區域362f、第六控制組件360f、及第六電漿調整板361f可具有與其相關聯的第六x/y平面偏移（x_1f ），且第六x/y平面偏移（x_1f ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第六控制組件360f可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1f ）。The sixth plasma adjustment rod (370f, 375f) may have a sixth diameter (d _1f ) associated therewith, and the sixth diameter (d _1f ) may vary from about 0.01 mm to about 1 mm. The sixth plasma adjustment plate 361f may have a sixth diameter (D _1f ) associated therewith, and the sixth diameter (D _1f ) may vary from about 1 mm to about 10 mm. The sixth EM coupling region 362f, the sixth control component 360f, and the sixth plasma adjustment plate 361f may have a sixth x/y plane offset (x _1f ) associated therewith, and a sixth x/y plane offset ( x _1f ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The sixth control assembly 360f can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1f ) from about 1 mm to about 5 mm.

第三微波處理系統300的俯視圖包含第一腔控制組件345a的俯視圖，其被顯示連結第一腔調整板346a的俯視圖。第一腔控制組件345a可包含介電材料，且可具有與其相關聯的第一直徑（d_1aa ），且該第一直徑（d_1aa ）可變化於約0.01 mm到約1 mm。第一腔調整板346a可包含介電材料，且可具有與其相關聯的第二直徑（D_1aa ），且該第二直徑（D_1aa ）可變化於約1 mm到約10 mm。第一腔控制組件345a和第一腔調整板346a可具有與其相關聯的第一x/y平面偏移（y_1aa ），且該第一x/y平面偏移（y_1aa ）可變化於約1 mm到約10 mm。The top view of the third microwave processing system 300 includes a top view of the first cavity control assembly 345a that is shown in a top view that joins the first cavity adjustment plate 346a. The first cavity control assembly 345a can comprise a dielectric material and can have a first diameter (d _1aa ) associated therewith, and the first diameter (d _1aa ) can vary from about 0.01 mm to about 1 mm. The first cavity adjustment plate 346a can comprise a dielectric material and can have a second diameter (D _1aa ) associated therewith, and the second diameter (D _1aa ) can vary from about 1 mm to about 10 mm. The first cavity control assembly 345a and the first cavity adjustment plate 346a can have a first x/y plane offset (y _1aa ) associated therewith, and the first x/y plane offset (y _1aa ) can vary from about 1 mm to about 10 mm.

此外，第三微波處理系統300的俯視圖包含第二腔控制組件345b的俯視圖，其被顯示連結第二腔調整板346b的俯視圖。第二腔控制組件345b可包含介電材料，且可具有與其相關聯的第一額外直徑（d_1ba ），且該第一額外直徑（d_1ba ）可變化於約0.01 mm到約1 mm。第二腔調整板346b可包含介電材料，且可具有與其相關聯的第二額外直徑（D_1ba ），且該第二額外直徑（D_1ba ）可變化於約1 mm到約10 mm。第二腔控制組件345b和第二腔調整板346b可具有與其相關聯的第二x/y平面偏移（y_1ba ），且第二x/y平面偏移（y_1ba ）可變化於約1 mm到約10 mm。Additionally, the top view of the third microwave processing system 300 includes a top view of the second chamber control assembly 345b that is shown in a top view that joins the second chamber adjustment plate 346b. The second cavity control assembly 345b can comprise a dielectric material and can have a first additional diameter (d _1ba ) associated therewith, and the first additional diameter (d _1ba ) can vary from about 0.01 mm to about 1 mm. The second chamber adjustment plate 346b can comprise a dielectric material and can have a second additional diameter (D _1ba ) associated therewith, and the second additional diameter (D _1ba ) can vary from about 1 mm to about 10 mm. The second cavity control component 345b and the second cavity adjustment plate 346b can have a second x/y plane offset (y _1ba ) associated therewith, and the second x/y plane offset (y _1ba ) can vary from about 1 Mm to about 10 mm.

圖3B顯示在第三微波處理系統300中第三製程腔室310的局部切開前視圖。該前視圖顯示互相連結的複數額外的壁312的x/z平面視圖，藉此建立在第三製程腔室310之中的製程空間315的局部切開前視圖。第三微波處理系統300可建構成用以在製程空間315之中形成均勻電漿。FIG. 3B shows a partially cutaway front view of the third process chamber 310 in the third microwave processing system 300. The front view shows an x/z plan view of the plurality of additional walls 312 interconnected, thereby establishing a partially cut front view of the process space 315 in the third process chamber 310. The third microwave processing system 300 can be configured to form a uniform plasma in the process space 315.

該前視圖顯示具有第一EM能量調整空間369a於其中的第一腔組件368a的切開圖，且第一腔組件368a可包含第一腔壁365a、第二腔壁366a、至少一個第三腔壁367a、及一個以上的額外的腔壁（未顯示）。舉例而言，第一腔組件368a可利用第一腔壁365a連結至第一介面組件312a。該前視圖亦顯示具有第二EM能量調整空間369b於其中的第二腔組件368b的切開視圖，且該第二腔組件368b可包含第一腔壁365b、第二腔壁366b、至少一個第三腔壁367b、及一個以上額外的腔壁（未顯示）。舉例來說，第二腔組件368b可利用第一腔壁365b連結至第二介面組件312b。The front view shows a cutaway view of the first chamber assembly 368a having the first EM energy adjustment space 369a therein, and the first chamber assembly 368a can include a first chamber wall 365a, a second chamber wall 366a, and at least one third chamber wall 367a, and more than one additional lumen wall (not shown). For example, the first cavity component 368a can be coupled to the first interface component 312a using the first cavity wall 365a. The front view also shows a cutaway view of the second chamber assembly 368b having the second EM energy adjustment space 369b therein, and the second chamber assembly 368b can include a first chamber wall 365b, a second chamber wall 366b, at least a third Cavity wall 367b, and more than one additional lumen wall (not shown). For example, the second cavity component 368b can be coupled to the second interface component 312b using the first cavity wall 365b.

在圖3B中顯示第一組電漿調整桿（370a-370c）的局部前視圖（虛線視圖）、第一組電漿調整板（361a-361c）的局部前視圖（虛線視圖）、第二組電漿調整桿（370d-370f）的局部前視圖（虛線視圖）、及第二組電漿調整板（361d-361f）的局部前視圖（虛線視圖）。A partial front view (dashed line view) of the first set of plasma adjustment bars (370a-370c), a partial front view (dashed view) of the first set of plasma adjustment plates (361a-361c), a second set are shown in Figure 3B. A partial front view (dashed view) of the plasma adjustment rods (370d-370f) and a partial front view (dashed view) of the second set of plasma adjustment plates (361d-361f).

第一組電漿調整桿（370a-370c）與第一組電漿調整板（361a-361c）可具有與其相關聯的第一組x/y平面偏移（x_2a-c ），且該第一組x/y平面偏移（x_2a-c ）可變化於約10 mm到約100 mm。第一組電漿調整桿（370a-370c）與第一組電漿調整板（361a-361c）可具有與其相關聯的第一組x/z平面偏移（z_1a-c ），且該第一組x/z平面偏移（z_1a-c ）可變化於約100 mm到約400 mm。The first set of plasma adjustment rods (370a-370c) and the first set of plasma adjustment plates (361a-361c) can have a first set of x/y plane offsets (x _2a-c ) associated therewith, and the A set of x/y plane offsets (x _2a-c ) can vary from about 10 mm to about 100 mm. The first set of plasma adjustment rods (370a-370c) and the first set of plasma adjustment plates (361a-361c) can have a first set of x/z plane offsets (z _1a-c ) associated therewith, and the A set of x/z plane offsets (z _1a-c ) can vary from about 100 mm to about 400 mm.

第二組電漿調整桿（370d-370f）與第二組電漿調整板（361d-361f）可具有與其相關聯的第二組x/y平面偏移（x_2d-f ），且該第二組x/y平面偏移（x_2d-f ）可變化於約10 mm到約100 mm。第二組電漿調整桿（370d-370f）與第二組電漿調整板（361d-361f）可具有與其相關聯的第二組x/z平面偏移（z_1d-f ），且該第二組x/z平面偏移（z_1d-f ）可變化於約100 mm到約400 mm。The second set of plasma adjustment rods (370d-370f) and the second set of plasma adjustment plates (361d-361f) may have a second set of x/y plane offsets (x _2d-f ) associated therewith, and the The two sets of x/y plane offsets (x _2d-f ) can vary from about 10 mm to about 100 mm. The second set of plasma adjustment rods (370d-370f) and the second set of plasma adjustment plates (361d-361f) may have a second set of x/z plane offsets (z _1d-f ) associated therewith, and the The two sets of x/z plane offsets (z _1d-f ) can vary from about 100 mm to about 400 mm.

圖3B顯示第三微波處理系統300可包含連結至腔室壁312的一個以上電漿感測器306，以取得第一電漿資料。此外，第三微波處理系統300可建構成用以處理200 mm基板、300 mm基板、或更大尺寸的基板。此外，可分別配置圓柱形、正方形和矩形腔室，使得第三微波處理系統300可建構成用以處理圓形、正方形、或矩形的基板、晶圓、或LCD，無論其為熟習此技藝者所知的何種尺寸。因此，雖然將就半導體基板的處理對本發明的實施態樣加以描述，但本發明係不僅限定於此。FIG. 3B shows that the third microwave processing system 300 can include more than one plasma sensor 306 coupled to the chamber wall 312 to obtain the first plasma material. Additionally, the third microwave processing system 300 can be constructed to process a 200 mm substrate, a 300 mm substrate, or a larger sized substrate. In addition, cylindrical, square, and rectangular chambers can be separately configured such that the third microwave processing system 300 can be constructed to process a circular, square, or rectangular substrate, wafer, or LCD, whether skilled in the art. What size is known. Therefore, although the embodiment of the present invention will be described with respect to the processing of the semiconductor substrate, the present invention is not limited thereto.

如圖3B所示，第一EM來源350a可連結至第一腔組件368a，且第二EM來源350b可連結至第二腔組件368b。第一EM來源350a可耦合至第一匹配網路352a，且第一匹配網路352a可耦合至第一耦合網路354a。第二EM來源350b可耦合至第二匹配網路352b，且第二匹配網路352b可耦合至第二耦合網路354b。或者是，可使用複數匹配網路（未顯示）或複數耦合網路（未顯示）。As shown in FIG. 3B, the first EM source 350a can be coupled to the first chamber assembly 368a and the second EM source 350b can be coupled to the second chamber assembly 368b. The first EM source 350a can be coupled to the first matching network 352a, and the first matching network 352a can be coupled to the first coupling network 354a. The second EM source 350b can be coupled to the second matching network 352b and the second matching network 352b can be coupled to the second coupling network 354b. Alternatively, a complex matching network (not shown) or a complex coupling network (not shown) may be used.

第一耦合網路354a可被可移除自如地連結至第一腔組件368a，而第一腔組件368a可被可移除自如地連結至製程腔室310的第一介面組件312a的上部。第一耦合網路354a可用以在第一腔組件368a之中提供微波能量至第一EM能量調整空間369a。第二耦合網路354b可被可移除自如地連結至第二腔組件368b，而第二腔組件368b可被可移除自如地連結至製程腔室310的第二介面組件312b的上部。第二耦合網路354b可用以在第二腔組件368b之中提供額外的微波能量至第二EM能量調整空間369b。或者，可使用其他的EM耦合構造。The first coupling network 354a can be removably coupled to the first cavity assembly 368a, and the first cavity assembly 368a can be removably coupled to the upper portion of the first interface component 312a of the process chamber 310. The first coupling network 354a can be used to provide microwave energy to the first EM energy adjustment space 369a within the first cavity assembly 368a. The second coupling network 354b can be removably coupled to the second chamber assembly 368b, and the second chamber assembly 368b can be removably coupled to the upper portion of the second interface assembly 312b of the process chamber 310. The second coupling network 354b can be used to provide additional microwave energy to the second EM energy conditioning space 369b within the second chamber assembly 368b. Alternatively, other EM coupling configurations can be used.

如圖3B所示，控制器395可連結396至EM來源（350a、350b）、匹配網路（352a、352b）、耦合網路（354a、354b）、及腔組件（368a、368b），並且控制器395可利用製程配方以建立、控制、及最佳化EM來源（350a、350b）、匹配網路（352a、352b）、耦合網路（354a、354b）、及腔組件（368a、368b），以控制製程空間315之內的電漿均勻性。舉例而言，EM來源（350a、350b）可操作於從約500 MHz到約5000 MHz的頻率。此外，控制器395可連結396至電漿感測器306和製程感測器307，並且控制器395可利用製程配方建立、控制、和最佳化來自電漿感測器306和製程感測器307的資料，以控制製程空間315之內的電漿均勻性。As shown in FIG. 3B, controller 395 can couple 396 to EM sources (350a, 350b), matching networks (352a, 352b), coupling networks (354a, 354b), and cavity components (368a, 368b), and control The processor 395 can utilize process recipes to establish, control, and optimize EM sources (350a, 350b), matching networks (352a, 352b), coupling networks (354a, 354b), and cavity components (368a, 368b), To control plasma uniformity within the process space 315. For example, the EM source (350a, 350b) can operate from a frequency of from about 500 MHz to about 5000 MHz. In addition, controller 395 can couple 396 to plasma sensor 306 and process sensor 307, and controller 395 can utilize process recipes to establish, control, and optimize from plasma sensor 306 and process sensor. 307 data to control plasma uniformity within process space 315.

此外，控制器395可連結396至氣體供給系統340、氣體供給次組件341、及氣體噴淋頭343。舉例而言，氣體供給系統340、氣體供給次組件341、及氣體噴淋頭343可建構成用以將一種以上製程氣體導入製程空間315，且可包含流量控制和/或流量量測元件。Additionally, controller 395 can couple 396 to gas supply system 340, gas supply subassembly 341, and gas showerhead 343. For example, gas supply system 340, gas supply subassembly 341, and gas showerhead 343 can be configured to direct more than one process gas into process space 315, and can include flow control and/or flow measurement elements.

在乾式電漿蝕刻期間，製程氣體可包含蝕刻劑、鈍化劑、或惰性氣體、或其二者以上的組合。舉例而言，當電漿蝕刻例如矽氧化物（SiO_x ）或矽氮化物（Si_x N_y ）之介電膜時，電漿蝕刻氣體成份通常包含氟碳基化學品（C_x F_y ），例如C₄ F₈ 、C₅ F₈ 、C₃ F₆ 、C₄ F₆ 、CF₄ 等其中至少一者，且/或可包含氟烴基化學品（C_x H_y F_z ），例如CHF₃ 、CH₂ F₂ 等其中至少一者，且可具有惰性氣體、氧、CO、或CO₂ 其中至少一者。此外，舉例來說，當蝕刻多晶矽之時，電漿蝕刻氣體成份一般包含含鹵素氣體，例如HBr、Cl₂ 、NF₃ 、或SF₆ 、或其二者以上組合，且可包含氟烴基化學品（C_x H_y F_z ），例如CHF₃ 、CH₂ F₂ 等其中至少一者，及惰性氣體、氧、CO、或CO₂ 其中至少一者、或其二者以上。在電漿輔助沉積期間，製程氣體可包含膜形成前驅物、還原氣體、或惰性氣體、或其二者以上之組合。During dry plasma etching, the process gas may comprise an etchant, a passivating agent, or an inert gas, or a combination of two or more thereof. For example, when a plasma etches a dielectric film such as tantalum oxide (SiO _x ) or tantalum nitride (Si _x N _y ), the plasma etching gas component usually contains a fluorocarbon-based chemical (C _x F _y ). For example, at least one of C ₄ F ₈ , C ₅ F ₈ , C ₃ F ₆ , C ₄ F ₆ , CF _{4 ,} etc., and/or may comprise a fluorocarbon based chemical (C _x H _y F _z ), such as CHF ₃ , at least one of CH ₂ F ₂ and the like, and may have at least one of an inert gas, oxygen, CO, or CO ₂ . Further, for example, when etching a polysilicon, the plasma etching gas component generally comprises a halogen-containing gas such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or a combination of two or more thereof, and may include a fluorocarbon-based chemical. (C _x H _y F _z ), for example, at least one of CHF ₃ , CH ₂ F _{2 ,} and the like, and at least one of inert gas, oxygen, CO, or CO ₂ , or two or more thereof. During plasma assisted deposition, the process gas may comprise a film forming precursor, a reducing gas, or an inert gas, or a combination of two or more thereof.

如圖3B所示，第三微波處理系統300可包含壓力控制系統390及埠391，其連結至製程腔室310且建構成用以排空製程腔室310並控制製程腔室310之內的壓力。此外，第三微波處理系統300可包含基板固持器320，用於將基板305安裝在製程空間315之中。As shown in FIG. 3B, the third microwave processing system 300 can include a pressure control system 390 and a crucible 391 coupled to the process chamber 310 and configured to evacuate the process chamber 310 and control the pressure within the process chamber 310. . Additionally, the third microwave processing system 300 can include a substrate holder 320 for mounting the substrate 305 in the process space 315.

第三微波處理系統300的前視圖包含第一腔控制組件345a的局部前視圖，其被顯示連結至第一腔調整板346a的前視圖。第一腔控制組件345a和第一腔調整板346a可具有與其關聯的第一x/z平面偏移（z_1aa ），且該第一x/z平面偏移（z_1aa ）可變化於約1 mm到約10 mm。The front view of the third microwave processing system 300 includes a partial front view of the first cavity control assembly 345a that is shown coupled to the front view of the first cavity adjustment plate 346a. The first cavity control assembly 345a and the first cavity adjustment plate 346a can have a first x/z plane offset (z _1aa ) associated _therewith , and the first x/z plane offset (z _1aa ) can vary from about 1 Mm to about 10 mm.

第一腔控制組件345a可用以在第一EM能量調整空間369a之內移動347a第一腔調整板346a腔調整距離348a。控制器395可連結396至腔控制組件345a，且控制器395可使用製程配方來建立、控制、及最佳化腔調整距離348a，以即時控制和維持在製程空間315之內的電漿均勻性。舉例而言，腔調整距離348a可變化於約0.01 mm到約10 mm，且腔調整距離348a可為波長相依的，且可變化於約（λ/4）到約（10λ）。The first cavity control assembly 345a can be used to move 347a the first cavity adjustment plate 346a cavity adjustment distance 348a within the first EM energy adjustment space 369a. The controller 395 can couple 396 to the chamber control assembly 345a, and the controller 395 can use the process recipe to establish, control, and optimize the chamber adjustment distance 348a to instantly control and maintain plasma uniformity within the process space 315. . For example, the cavity adjustment distance 348a can vary from about 0.01 mm to about 10 mm, and the cavity adjustment distance 348a can be wavelength dependent and can vary from about (λ/4) to about (10λ).

此外，第三微波處理系統300的前視圖包含第二腔控制組件345b的局部前視圖，其被顯示連結至第二腔調整板346b的前視圖。第二腔控制組件345b和第二腔調整板346b可具有與其關聯的第二x/z平面偏移（z_1ba ），且該第二x/z平面偏移（z_1ba ）可變化於約1 mm到約10 mm。Additionally, the front view of the third microwave processing system 300 includes a partial front view of the second cavity control assembly 345b that is shown coupled to the front view of the second cavity adjustment plate 346b. The second cavity control component 345b and the second cavity adjustment plate 346b can have a second x/z plane offset (z _1ba ) associated _therewith , and the second x/z plane offset (z _1ba ) can vary from about 1 Mm to about 10 mm.

第二腔控制組件345b可用以在第二EM能量調整空間369b之內移動347b第二腔調整板346b第二腔調整距離348b。控制器395可連結396至第二腔控制組件345b，且控制器395可使用製程配方來建立、控制、及最佳化第二腔調整距離348b，以即時控制和維持在製程空間315之內的電漿均勻性。舉例而言，第二腔調整距離348b可變化於約0.01 mm到約10 mm，且第二腔調整距離348b可為波長相依的，且可變化於約（λ/4）到約（10λ）。The second chamber control assembly 345b can be used to move 347b the second chamber adjustment plate 346b the second chamber adjustment distance 348b within the second EM energy adjustment space 369b. The controller 395 can couple 396 to the second chamber control assembly 345b, and the controller 395 can use the process recipe to establish, control, and optimize the second chamber adjustment distance 348b for immediate control and maintenance within the process space 315. Plasma uniformity. For example, the second cavity adjustment distance 348b can vary from about 0.01 mm to about 10 mm, and the second cavity adjustment distance 348b can be wavelength dependent and can vary from about (λ/4) to about (10λ).

圖3C顯示在第三微波處理系統300中第三製程腔室310的局部切開側視圖。該側視圖顯示連結至第一介面組件312a和第二介面組件312b的複數腔室壁312的y/z平面視圖，藉此建立在製程腔室310之中的製程空間315的局部切開側視圖。第三微波處理系統300可建構成用以在製程空間315之中形成均勻電漿。FIG. 3C shows a partial cutaway side view of the third process chamber 310 in the third microwave processing system 300. The side view shows a y/z plan view of the plurality of chamber walls 312 joined to the first interface component 312a and the second interface component 312b, thereby establishing a partially cutaway side view of the process space 315 in the process chamber 310. The third microwave processing system 300 can be configured to form a uniform plasma in the process space 315.

在圖3C中顯示在第一腔組件368a中的第一EM能量調整空間369a的局部側視圖與在第二腔組件368b中的第二EM能量調整空間369b的局部側視圖。在圖3C中顯示第一組電漿調整桿（370a-370c）的局部側視圖、第一組電漿調整板（361a-361c）的局部側視圖、第二組電漿調整桿（370d-370f）的局部側視圖、及第二組電漿調整板（361d-361f）的局部側視圖。A partial side view of the first EM energy adjustment space 369a in the first chamber assembly 368a and a partial side view of the second EM energy adjustment space 369b in the second chamber assembly 368b are shown in FIG. 3C. A partial side view of the first set of plasma adjustment rods (370a-370c), a partial side view of the first set of plasma adjustment plates (361a-361c), and a second set of plasma adjustment rods (370d-370f) are shown in Figure 3C. A partial side view of the) and a partial side view of the second set of plasma conditioning plates (361d-361f).

在圖3C中亦顯示第一組隔離組件（364a、364b、及364c）與第二組隔離組件（364d、364e、及364f）的側視圖。舉例來說，第一組隔離組件（364a、364b、及364c）可用以將第一組電漿調整桿﹛（370a、370b、及370c）和（375a、375b、及375c）﹜可移除自如地連結至第一介面組件312a。第一組隔離組件（364a、364b、及364c）每一者可被可移除自如地連結至第一介面組件312a。此外，第二組隔離組件（364d、364e、及364f）可用以將第二組電漿調整桿﹛（370d、370e、及370f）和（375d、375e、及375f）﹜可移除自如地連結至第二介面組件312b。第二組隔離組件（364d、364e、及364f）每一者可被可移除自如地連結至第二介面組件312b。A side view of the first set of isolation assemblies (364a, 364b, and 364c) and the second set of isolation assemblies (364d, 364e, and 364f) is also shown in FIG. 3C. For example, a first set of isolation components (364a, 364b, and 364c) can be used to remove the first set of plasma adjustment rods {(370a, 370b, and 370c) and (375a, 375b, and 375c)} Groundly coupled to the first interface component 312a. The first set of isolation components (364a, 364b, and 364c) can each be removably coupled to the first interface component 312a. In addition, a second set of isolation components (364d, 364e, and 364f) can be used to removably connect the second set of plasma adjustment rods {(370d, 370e, and 370f) and (375d, 375e, and 375f)} To the second interface component 312b. The second set of isolation components (364d, 364e, and 364f) can each be removably coupled to the second interface component 312b.

如圖3C所示，第一組電漿調整板（361a、361b、及361c）可連結至第一組控制組件（360a、360b、及360c），且第一組控制組件（360a、360b、及360c）可用以在第一EM能量調整空間369a之內，將第一組電漿調整板（361a、361b、及361c）相對於EM調整部（375a、375b、及375c）移動（363a、363b、及363c）第一組EM調整距離（377a、377b、及377c）。此外，第二組電漿調整板（361d、361e、及361f）可連結至第二組控制組件（360d、360e、及360f），且第二組控制組件（360d、360e、及360f）可用以在第二EM能量調整空間369b之內，將第二組電漿調整板（361d、361e、及361f）相對於EM調整部（375d、375e、及375f）移動（363d、363e、及363f）第二組EM調整距離（377d、377e、及377f）。As shown in FIG. 3C, the first set of plasma adjustment plates (361a, 361b, and 361c) can be coupled to the first set of control components (360a, 360b, and 360c), and the first set of control components (360a, 360b, and 360c) may be used to move the first set of plasma adjustment plates (361a, 361b, and 361c) relative to the EM adjustment portions (375a, 375b, and 375c) within the first EM energy adjustment space 369a (363a, 363b, And 363c) the first set of EM adjustment distances (377a, 377b, and 377c). In addition, a second set of plasma adjustment plates (361d, 361e, and 361f) can be coupled to the second set of control components (360d, 360e, and 360f), and a second set of control components (360d, 360e, and 360f) can be used Within the second EM energy adjustment space 369b, the second set of plasma adjustment plates (361d, 361e, and 361f) are moved relative to the EM adjustment portions (375d, 375e, and 375f) (363d, 363e, and 363f) Two sets of EM adjustment distances (377d, 377e, and 377f).

第一組控制組件（360a、360b、及360c）可連結396至控制器395，且控制器395可使用製程配方來建立、控制、和最佳化第一組EM調整距離（377a、377b、及377c），以控制在製程空間315之內的電漿均勻性。此外，第二組控制組件（360d、360e、及360f）可連結396至控制器395，且控制器395可使用製程配方來建立、控制、和最佳化第二組EM調整距離（377d、377e、及377f），以控制在製程空間315之內的電漿均勻性。The first set of control components (360a, 360b, and 360c) can be coupled 396 to the controller 395, and the controller 395 can use the process recipe to establish, control, and optimize the first set of EM adjustment distances (377a, 377b, and 377c) to control plasma uniformity within the process space 315. Additionally, a second set of control components (360d, 360e, and 360f) can be coupled 396 to controller 395, and controller 395 can use process recipes to establish, control, and optimize a second set of EM adjustment distances (377d, 377e) And 377f) to control plasma uniformity within the process space 315.

控制器395可連結396至EM來源（350a、350b）、匹配網路（352a、352b）、耦合網路（354a、354b）、及腔組件（368a、368b），且控制器395可利用製程配方來建立、控制、及最佳化EM來源（350a、350b）、匹配網路（352a、352b）、耦合網路（354a、354b）、及腔組件（368a、368b），以控制在製程空間315之內的電漿均勻性。舉例來說，EM來源（350a、350b）可操作於約500 MHz到約5000 MHz之頻率。此外，控制器395可連結396至電漿感測器306、製程感測器307、及腔感測器（308a及308b），且控制器395可利用製程配方來建立、控制、及最佳化來自電漿感測器306、製程感測器307、及腔感測器（308a及308b）的資料，以控制在製程空間315之內的電漿均勻性。Controller 395 can couple 396 to EM sources (350a, 350b), matching networks (352a, 352b), coupling networks (354a, 354b), and cavity components (368a, 368b), and controller 395 can utilize process recipes To establish, control, and optimize EM sources (350a, 350b), matching networks (352a, 352b), coupling networks (354a, 354b), and cavity components (368a, 368b) for control in process space 315 Plasma uniformity within. For example, the EM source (350a, 350b) can operate at frequencies from about 500 MHz to about 5000 MHz. In addition, the controller 395 can connect 396 to the plasma sensor 306, the process sensor 307, and the cavity sensors (308a and 308b), and the controller 395 can be established, controlled, and optimized using the process recipe. Data from plasma sensor 306, process sensor 307, and cavity sensors (308a and 308b) are used to control plasma uniformity within process space 315.

該側視圖描述製程腔室310，其具有在y/z平面之與其相關聯的全寬（y_T ）和全高（z_T ）。該全寬（y_T ）可變化於約50 mm到約500 mm，且該全高（z_T ）可變化於約50 mm到約500 mm。This side view depicts the process chamber 310 having its full width (y _T ) and full height (z _T ) associated with it in the y/z plane. The full width (y _T ) can vary from about 50 mm to about 500 mm, and the full height (z _T ) can vary from about 50 mm to about 500 mm.

圖4A顯示在第四微波處理系統400中第四製程腔室410的局部切開俯視圖。該俯視圖顯示形成第四製程腔室410的第一介面組件412a、第二介面組件412b、及連結至第一介面組件412a和第二介面組件412b的複數額外的腔室壁412的x/y平面圖。舉例來說，腔室壁412可具有與其相關聯的壁厚度（t），且該壁厚度（t）可變化於約1 mm到約5 mm。第一介面組件412a可具有與其相關聯的第一介面厚度（t_i1 ），且該第一介面厚度（t_i1 ）可變化於約1 mm到約10 mm。第二介面組件412b可具有與其相關聯的第二介面厚度（t_i2 ），且該第二介面厚度（t_i2 ）可變化於約1 mm到約10 mm。製程空間415可具有與其相關聯的長度（x_T ），且該長度（x_T ）可變化於約10 mm到約500 mm。4A shows a partial cutaway plan view of the fourth process chamber 410 in the fourth microwave processing system 400. The top view shows the x/y plan view of the first interface component 412a, the second interface component 412b forming the fourth process chamber 410, and the plurality of additional chamber walls 412 joined to the first interface component 412a and the second interface component 412b. . For example, the chamber wall 412 can have a wall thickness (t) associated therewith, and the wall thickness (t) can vary from about 1 mm to about 5 mm. The first interface component 412a can have a first interface thickness (t _i1 ) associated therewith, and the first interface thickness (t _i1 ) can vary from about 1 mm to about 10 mm. The second interface component 412b can have a second interface thickness (t _i2 ) associated therewith, and the second interface thickness (t _i2 ) can vary from about 1 mm to about 10 mm. The process space 415 can have a length (x _T ) associated therewith, and the length (x _T ) can vary from about 10 mm to about 500 mm.

第四微波處理系統400的俯視圖顯示具有第一EM能量調整空間469a於其中的第一腔組件468a的切開視圖，且該第一腔組件468a可包含第一腔壁465a、第二腔壁466a、至少一個第三腔壁467a、及一個以上額外的腔壁（未顯示）。舉例來說，第一腔組件468a可利用第一腔壁465a連結至第一介面組件412a，並且壁（465a、466a、及467a）可包含介電材料且可具有與其相關聯的壁厚度（t_a ），而壁厚度（t_a ）可變化於自約1 mm到約5 mm。此外，第一EM能量調整空間469a可具有與其相關聯的第一長度（x_T1a ）及第一寬度（y_1a ），第一長度（x_T1a ）可變化於自約10 mm到約500 mm，且第一寬度（y_1a ）可變化於自約5 mm到約50 mm。A top view of the fourth microwave processing system 400 shows a cutaway view of the first chamber assembly 468a having the first EM energy adjustment space 469a therein, and the first chamber assembly 468a can include a first chamber wall 465a, a second chamber wall 466a, At least one third lumen wall 467a, and one or more additional lumen walls (not shown). For example, the first cavity assembly 468a can be coupled to the first interface component 412a using the first cavity wall 465a, and the walls (465a, 466a, and 467a) can comprise a dielectric material and can have a wall thickness associated therewith (t _a ), and the wall thickness (t _a ) can vary from about 1 mm to about 5 mm. Furthermore, the first EM energy adjustment space 469a can have a first length (x _T1a ) and a first width (y _1a ) associated therewith, the first length (x _T1a ) being variable from about 10 mm to about 500 mm, And the first width (y _1a ) can vary from about 5 mm to about 50 mm.

第四微波處理系統400的俯視圖亦顯示具有第二EM能量調整空間469b於其中的第二腔組件468b的切開視圖，且該第二腔組件468b可包含第一腔壁465b、第二腔壁466b、至少一個第三腔壁467b、及一個以上額外的腔壁（未顯示）。舉例來說，第二腔組件468b可利用第一腔壁465b連結至第二介面組件412b，並且壁（465b、466b、及467b）可包含介電材料且可具有與其相關聯的壁厚度（t_b ），而壁厚度（t_b ）可變化於自約1 mm到約5 mm。此外，第二EM能量調整空間469b可具有與其相關聯的第二長度（x_T1b ）及第二寬度（y_1b ），第二長度（x_T1b ）可變化於自約10 mm到約500 mm，且第二寬度（y_1b ）可變化於自約5 mm到約50 mm。The top view of the fourth microwave processing system 400 also shows a cutaway view of the second chamber assembly 468b having the second EM energy adjustment space 469b therein, and the second chamber assembly 468b can include a first chamber wall 465b, a second chamber wall 466b At least one third lumen wall 467b, and one or more additional lumen walls (not shown). For example, the second cavity assembly 468b can be coupled to the second interface component 412b using the first cavity wall 465b, and the walls (465b, 466b, and 467b) can comprise a dielectric material and can have a wall thickness associated therewith (t _b ), and the wall thickness (t _b ) can vary from about 1 mm to about 5 mm. In addition, the second EM energy adjustment space 469b can have a second length (x _T1b ) and a second width (y _1b ) associated therewith, and the second length (x _T1b ) can vary from about 10 mm to about 500 mm. And the second width (y _1b ) can vary from about 5 mm to about 50 mm.

在若干例示系統中，一第一組隔離組件（464a及464b）可被可移除自如地連結至第一介面組件412a，且可建構成用以將製程空間415隔離於第一EM能量調整空間469a。該第一組隔離組件（464a及464b）可用以將第一組電漿調整桿﹛（470a及470b）和（475a及475b）﹜可移除自如地連結至第一介面組件412a。舉例而言，第一組電漿調整部（470a及470b）可配置於製程空間415之中，且第一組EM調整部（475a及475b）可配置於第一EM能量調整空間469a之內。In several exemplary systems, a first set of isolation components (464a and 464b) can be removably coupled to the first interface component 412a and can be configured to isolate the process space 415 from the first EM energy adjustment space. 469a. The first set of isolation assemblies (464a and 464b) can be used to releasably couple the first set of plasma adjustment rods {(470a and 470b) and (475a and 475b)} to the first interface assembly 412a. For example, the first set of plasma adjustment sections (470a and 470b) may be disposed in the process space 415, and the first set of EM adjustment sections (475a and 475b) may be disposed within the first EM energy adjustment space 469a.

第二組隔離組件（464c及464d）可被可移除自如地連結至第二介面組件412b，且可建構成用以將製程空間415隔離於第二EM能量調整空間469b。該第二組隔離組件（464c及464d）可用以將第二組電漿調整桿﹛（470c及470d）和（475c及475d）﹜可移除自如地連結至第二介面組件412b。舉例而言，第二組電漿調整部（470c及470d）可配置於製程空間415之中，且第二組EM調整部（475c及475d）可配置於第二EM能量調整空間469b。The second set of isolation components (464c and 464d) can be removably coupled to the second interface component 412b and can be configured to isolate the process space 415 from the second EM energy adjustment space 469b. The second set of isolation assemblies (464c and 464d) can be used to removably couple the second set of plasma adjustment rods {(470c and 470d) and (475c and 475d)} to the second interface assembly 412b. For example, the second set of plasma adjustment sections (470c and 470d) may be disposed in the process space 415, and the second set of EM adjustment sections (475c and 475d) may be disposed in the second EM energy adjustment space 469b.

仍然參考圖4A，第一電漿調整桿（470a, 475a）可包含介電材料，且可具有第一電漿調整部470a，其可於利用（x_2a ）加以定義的第一位置延伸第一電漿調整距離471a進入製程空間415。第一電漿調整距離471a可變化於自約10 mm到約400 mm。Still referring to FIG. 4A, the first plasma adjustment rod (470a, 475a) may comprise a dielectric material and may have a first plasma adjustment portion 470a that may extend first at a first position defined by ( _x2a ) The plasma adjustment distance 471a enters the process space 415. The first plasma adjustment distance 471a can vary from about 10 mm to about 400 mm.

第一EM耦合區域462a可在建立於第一腔組件468a之中的第一EM能量調整空間469a之內，於由第一腔壁465a之第一EM耦合距離476a處加以建立，並且第一EM調整部475a可延伸進入第一EM耦合區域462a。第一EM調整部475a可自第一EM耦合區域462a取得第一微波能量，且第一微波能量可利用第一電漿調整部470a於第一位置（x_2a ）傳送至製程空間415。第一EM耦合區域462a可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第一EM耦合距離476a可變化於約0.01 mm到約10 mm，並且第一EM耦合距離476a可為波長相依且可變化於約（λ/4）到約（10λ）。The first EM coupling region 462a can be established within the first EM energy adjustment space 469a established in the first cavity assembly 468a at the first EM coupling distance 476a of the first cavity wall 465a, and the first EM The adjustment portion 475a can extend into the first EM coupling region 462a. The first EM adjustment portion 475a can obtain the first microwave energy from the first EM coupling region 462a, and the first microwave energy can be transmitted to the process space 415 at the first position (x _2a ) by the first plasma adjustment portion 470a. The first EM coupling region 462a can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the first EM coupling distance 476a can vary from about 0.01 mm to about 10 mm, and the first EM coupling distance 476a can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第一電漿調整板461a可包含介電材料，可連結至第一控制組件460a，其可用以在第一EM能量調整空間469a之內將該第一電漿調整板461a相對於第一電漿調整桿（470a, 475a）的第一EM調整部475a移動463a一第一EM調整距離477a。該第一控制組件460a和該第一電漿調整板461a可用以將自第一EM耦合區域462a耦合至第一電漿調整桿（470a, 475a）的第一EM調整部475a之微波能量予以最佳化。舉例來說，第一EM調整距離477a可建立於第一EM能量調整空間469a內之第一EM調整部475a和第一電漿調整板461a之間，且第一EM調整距離477a可變化於約0.01 mm到約1 mm。The first plasma conditioning plate 461a can include a dielectric material that can be coupled to the first control component 460a that can be used to move the first plasma conditioning plate 461a relative to the first plasma within the first EM energy conditioning space 469a The first EM adjustment portion 475a of the adjustment lever (470a, 475a) moves 463a by a first EM adjustment distance 477a. The first control component 460a and the first plasma conditioning plate 461a can be used to couple the microwave energy from the first EM coupling region 462a to the first EM adjustment portion 475a of the first plasma adjustment rod (470a, 475a). Jiahua. For example, the first EM adjustment distance 477a may be established between the first EM adjustment portion 475a and the first plasma adjustment plate 461a in the first EM energy adjustment space 469a, and the first EM adjustment distance 477a may vary From 0.01 mm to about 1 mm.

第一電漿調整桿（470a, 475a）可具有與其相關聯的第一直徑（d_1a ），且第一直徑（d_1a ）可變化於約0.01 mm到約1 mm。第一電漿調整板461a可具有與其相關聯的第一直徑（D_1a ），且第一直徑（D_1a ）可變化於約1 mm到約10 mm。第一EM耦合區域462a、第一控制組件460a、及第一電漿調整板461a可具有與其相關聯的第一x/y平面偏移（x_1a ），且第一x/y平面偏移（x_1a ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第一控制組件460a可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1a ）。The first diameter (d _1a) a first plasma adjustment lever (470a, 475a) may have associated therewith, and the first diameter (d _1a) may vary from about 0.01 mm to about 1 mm. The first plasma conditioning plate 461a can have a first diameter (D _1a ) associated therewith, and the first diameter (D _1a ) can vary from about 1 mm to about 10 mm. The first EM coupling region 462a, the first control component 460a, and the first plasma conditioning plate 461a can have a first x/y plane offset (x _1a ) associated therewith, and the first x/y plane offset ( x _1a ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The first control assembly 460a can have a cylindrical configuration and a diameter (d _1a ) that can vary from about 1 mm to about 5 mm.

第二電漿調整桿（470b, 475b）可具有第二電漿調整部470b，其於利用（x_2b ）加以定義的第二位置延伸第二電漿調整距離471b進入製程空間415。舉例來說，第二電漿調整距離471b可變化於約10 mm到約400 mm。The second plasma adjustment lever (470b, 475b) may have a second plasma adjusting portion 470b, which is to be defined by using (x _2b) extending in a second position of adjustment of the distance of the second plasma into the process volume 415 471b. For example, the second plasma adjustment distance 471b can vary from about 10 mm to about 400 mm.

第二EM耦合區域462b可在建立於第一腔組件468a之中的第一EM能量調整空間469a之內，於由第一腔壁465a之第二EM耦合距離476b處加以建立，並且第二EM調整部475b可延伸進入第二EM耦合區域462b。第二EM調整部475b可自第二EM耦合區域462b取得第二微波能量，且第二微波能量可利用第二電漿調整部470b於第二位置（x_2b ）傳送至製程空間415。第二EM耦合區域462b可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第二EM耦合距離476b可變化於約0.01 mm到約10 mm，並且第二EM耦合距離476b可為波長相依且可變化於約（λ/4）到約（10λ）。The second EM coupling region 462b can be established within the first EM energy adjustment space 469a established in the first cavity assembly 468a at the second EM coupling distance 476b of the first cavity wall 465a, and the second EM The adjustment portion 475b can extend into the second EM coupling region 462b. The second EM adjustment portion 475b can obtain the second microwave energy from the second EM coupling region 462b, and the second microwave energy can be transmitted to the process space 415 at the second position (x _2b ) by the second plasma adjustment portion 470b. The second EM coupling region 462b can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the second EM coupling distance 476b can vary from about 0.01 mm to about 10 mm, and the second EM coupling distance 476b can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第二電漿調整板461b可包含介電材料，可連結至第二控制組件460b，其可用以在第一EM能量調整空間469a之內將該第二電漿調整板461b相對於第二電漿調整桿（470b, 475b）的第二EM調整部475b移動463b一第二EM調整距離477b。該第二控制組件460b和該第二電漿調整板461b可用以將自第二EM耦合區域462b耦合至第二電漿調整桿（470b, 475b）的第二EM調整部475b之微波能量予以最佳化。舉例來說，第二EM調整距離477b可建立於第一EM能量調整空間469a內之第二EM調整部475b和第二電漿調整板461b之間，且第二EM調整距離477b可變化於約0.01 mm到約1 mm。The second plasma conditioning plate 461b can include a dielectric material that can be coupled to the second control component 460b that can be used to compare the second plasma conditioning plate 461b relative to the second plasma within the first EM energy conditioning space 469a The second EM adjustment portion 475b of the adjustment lever (470b, 475b) moves 463b to a second EM adjustment distance 477b. The second control component 460b and the second plasma adjustment plate 461b can be used to couple the microwave energy from the second EM coupling region 462b to the second EM adjustment portion 475b of the second plasma adjustment rod (470b, 475b). Jiahua. For example, the second EM adjustment distance 477b can be established between the second EM adjustment portion 475b and the second plasma adjustment plate 461b in the first EM energy adjustment space 469a, and the second EM adjustment distance 477b can be changed to approximately From 0.01 mm to about 1 mm.

第二電漿調整桿（470b, 475b）可具有與其相關聯的第二直徑（d_1b ），且第二直徑（d_1b ）可變化於約0.01 mm到約1 mm。第二電漿調整板461b可具有與其相關聯的第二直徑（D_1b ），且第二直徑（D_1b ）可變化於約1 mm到約10 mm。第二EM耦合區域462b、第二控制組件460b、及第二電漿調整板461b可具有與其相關聯的第二x/y平面偏移（x_1b ），且第二x/y平面偏移（x_1b ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第二控制組件460b可包含介電材料，且可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1b ）。The second diameter (d _1b) a second plasma adjustment lever (470b, 475b) may have associated therewith, and a second diameter (d _1b) may vary from about 0.01 mm to about 1 mm. The second plasma conditioning plate 461b can have a second diameter ( _D1b ) associated therewith, and the second diameter ( _D1b ) can vary from about 1 mm to about 10 mm. The second EM coupling region 462b, the second control component 460b, and the second plasma conditioning plate 461b can have a second x/y plane offset (x _1b ) associated therewith, and a second x/y plane offset ( x _1b ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The second control component 460b can comprise a dielectric material and can have a cylindrical configuration and a diameter (d _1b ) that can vary from about 1 mm to about 5 mm.

第三電漿調整桿（470c, 475c）可包含介電材料，且可具有第三電漿調整部470c，其於利用（x_2c ）加以定義的第三位置延伸第三電漿調整距離471c進入製程空間415。舉例來說，第三電漿調整距離471c可變化於約10 mm到約400 mm。Plasma third adjusting lever (470c, 475c) may comprise a dielectric material, and may have a third portion 470c adjust the plasma, which is defined to be the use of (x _2c) extending in a third position into the third plasma 471c adjust the distance Process space 415. For example, the third plasma adjustment distance 471c can vary from about 10 mm to about 400 mm.

第三EM耦合區域462c可在建立於第二腔組件468b之中的第二EM能量調整空間469b之內，於由第一腔壁465a之第三EM耦合距離476c處加以建立，並且第三EM調整部475c可延伸進入第三EM耦合區域462c。第三EM調整部475c可自第三EM耦合區域462c取得第三微波能量，且第三微波能量可利用第三電漿調整部470c於第三位置（x_2c ）傳送至製程空間415。第三EM耦合區域462c可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第三EM耦合距離476c可變化於約0.01 mm到約10 mm，並且第三EM耦合距離476c可為波長相依且可變化於約（λ/4）到約（10λ）。The third EM coupling region 462c can be established within the second EM energy adjustment space 469b established in the second chamber assembly 468b at the third EM coupling distance 476c of the first chamber wall 465a, and the third EM The adjustment portion 475c can extend into the third EM coupling region 462c. The third EM adjustment portion 475c may obtain the third microwave energy from the third EM coupling region 462c, and the third microwave energy may be transmitted to the process space 415 at the third position (x _2c ) by the third plasma adjustment portion 470c. The third EM coupling region 462c can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the third EM coupling distance 476c can vary from about 0.01 mm to about 10 mm, and the third EM coupling distance 476c can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第三電漿調整板461c可包含介電材料，可連結至第三控制組件460c，其可用以在第二EM能量調整空間469b之內將該第三電漿調整板461c相對於第三電漿調整桿（470c, 475c）的第三EM調整部475c移動463c一第三EM調整距離477c。該第三控制組件460c和該第三電漿調整板461c可用以將自第三EM耦合區域462c耦合至第三電漿調整桿（470c, 475c）的第三EM調整部475c之微波能量予以最佳化。舉例來說，第三EM調整距離477c可建立於第二EM能量調整空間469b內之第三EM調整部475c和第三電漿調整板461c之間，且第三EM調整距離477c可變化於約0.01 mm到約1 mm。The third plasma conditioning plate 461c can include a dielectric material that can be coupled to the third control component 460c that can be used to compare the third plasma conditioning plate 461c with respect to the third plasma within the second EM energy conditioning space 469b. The third EM adjustment portion 475c of the adjustment lever (470c, 475c) moves 463c by a third EM adjustment distance 477c. The third control component 460c and the third plasma adjustment plate 461c can be used to maximize the microwave energy of the third EM adjustment portion 475c coupled from the third EM coupling region 462c to the third plasma adjustment rod (470c, 475c). Jiahua. For example, the third EM adjustment distance 477c may be established between the third EM adjustment portion 475c and the third plasma adjustment plate 461c in the second EM energy adjustment space 469b, and the third EM adjustment distance 477c may vary from about From 0.01 mm to about 1 mm.

第三電漿調整桿（470c, 475c）可具有與其相關聯的第三直徑（d_1c ），且第三直徑（d_1c ）可變化於約0.01 mm到約1 mm。第三電漿調整板461c可具有與其相關聯的第三直徑（D_1c ），且第三直徑（D_1c ）可變化於約1 mm到約10 mm。第三EM耦合區域462c、第三控制組件460c、及第三電漿調整板461c可具有與其相關聯的第三x/y平面偏移（x_1c ），且第三x/y平面偏移（x_1c ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第三控制組件460c可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1c ）。Third diameter (d _1c) plasma third adjusting lever (470c, 475c) may have associated therewith, and a third diameter (d _1c) may vary from about 0.01 mm to about 1 mm. The third plasma conditioning plate 461c can have a third diameter (D _1c ) associated therewith, and the third diameter (D _1c ) can vary from about 1 mm to about 10 mm. The third EM coupling region 462c, the third control component 460c, and the third plasma conditioning plate 461c may have a third x/y plane offset (x _1c ) associated therewith, and a third x/y plane offset ( x _1c ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The third control component 460c can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1c ) from about 1 mm to about 5 mm.

第四電漿調整桿（470d, 475d）可包含介電材料，且可具有第四電漿調整部470d，其可於利用（x_2d ）加以定義的第四位置延伸第四電漿調整距離471d進入製程空間415。舉例來說，第四電漿調整距離471d可變化於約10 mm到約400 mm。The fourth adjusting lever plasma (470d, 475d) may comprise a dielectric material, and may have a fourth portion 47Od adjusting plasma, which may be in use (x _2d) extending in a fourth position to be defined by adjusting the distance a fourth plasma 471d Enter the process space 415. For example, the fourth plasma adjustment distance 471d can vary from about 10 mm to about 400 mm.

第四EM耦合區域462d可在建立於第二腔組件468b之中的第二EM能量調整空間469b之內，於由第二腔壁465b之第四EM耦合距離476d處加以建立，並且第四EM調整部475d可延伸進入第四EM耦合區域462d。第四EM調整部475d可自第四EM耦合區域462d取得第四微波能量，且第四微波能量可利用第四電漿調整部470d於第四位置（x_2d ）傳送至製程空間415。第四EM耦合區域462d可包含一最大場區域、一最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。舉例來說，第四EM耦合距離476d可變化於約0.01 mm到約10 mm，並且第四EM耦合距離476d可為波長相依且可變化於約（λ/4）到約（10λ）。The fourth EM coupling region 462d can be established within the second EM energy adjustment space 469b established in the second cavity assembly 468b at the fourth EM coupling distance 476d of the second cavity wall 465b, and the fourth EM The adjustment portion 475d may extend into the fourth EM coupling region 462d. The fourth EM adjusting portion 475d may obtain the fourth microwave energy from the fourth EM coupling region 462d, and the fourth microwave energy may be transmitted to the processing space 415 at the fourth position (x _2d ) by the fourth plasma adjusting portion 470d. The fourth EM coupling region 462d can include a maximum field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof. For example, the fourth EM coupling distance 476d can vary from about 0.01 mm to about 10 mm, and the fourth EM coupling distance 476d can be wavelength dependent and can vary from about (λ/4) to about (10λ).

第四電漿調整板461d可包含介電材料，可連結至第四控制組件460d，其可用以在第二EM能量調整空間469b之內將該第四電漿調整板461d相對於第四電漿調整桿（470d, 475d）的第四EM調整部475d移動463d一第四EM調整距離477d。該第四控制組件460d和該第四電漿調整板461d可用以將自第四EM耦合區域462d耦合至第四電漿調整桿（470d, 475d）的第四EM調整部475d之微波能量予以最佳化。舉例來說，第四EM調整距離477d可建立於第二EM能量調整空間469b內之第四EM調整部475d和第四電漿調整板461d之間，且第四EM調整距離477d可變化於約0.01 mm到約1 mm。The fourth plasma adjusting plate 461d may include a dielectric material coupled to the fourth control component 460d, which may be used to compare the fourth plasma adjusting plate 461d with respect to the fourth plasma within the second EM energy adjusting space 469b. The fourth EM adjustment portion 475d of the adjustment lever (470d, 475d) moves 463d by a fourth EM adjustment distance 477d. The fourth control component 460d and the fourth plasma adjustment plate 461d can be used to couple the microwave energy of the fourth EM adjustment portion 475d coupled from the fourth EM coupling region 462d to the fourth plasma adjustment rod (470d, 475d). Jiahua. For example, the fourth EM adjustment distance 477d may be established between the fourth EM adjustment portion 475d and the fourth plasma adjustment plate 461d in the second EM energy adjustment space 469b, and the fourth EM adjustment distance 477d may vary from about From 0.01 mm to about 1 mm.

第四電漿調整桿（470d, 475d）可具有與其相關聯的第四直徑（d_1d ），且第四直徑（d_1d ）可變化於約0.01 mm到約1 mm。第四電漿調整板461d可具有與其相關聯的第四直徑（D_1d ），且第四直徑（D_1d ）可變化於約1 mm到約10 mm。第四EM耦合區域462d、第四控制組件460d、及第四電漿調整板461d可具有與其相關聯的第四x/y平面偏移（x_1d ），且第四x/y平面偏移（x_1d ）可為波長相依的，且可變化於約四分之一波長（λ/4）到約（10λ）。第四控制組件460d可包含介電材料，可具有圓柱形構造及可變化於約1 mm到約5 mm的直徑（d_1d ）。Fourth diameter (d _1d) plasma fourth adjusting lever (470d, 475d) may have associated therewith, and a fourth diameter (d _1d) may vary from about 0.01 mm to about 1 mm. The fourth plasma adjustment plate 461d may have a fourth diameter ( _D1d ) associated therewith, and the fourth diameter ( _D1d ) may vary from about 1 mm to about 10 mm. The fourth EM coupling region 462d, the fourth control component 460d, and the fourth plasma conditioning plate 461d may have a fourth x/y plane offset (x _1d ) associated therewith, and a fourth x/y plane offset ( x _1d ) may be wavelength dependent and may vary from about a quarter wavelength (λ/4) to about (10λ). The fourth control component 460d can comprise a dielectric material, can have a cylindrical configuration and can vary in diameter (d _1d ) from about 1 mm to about 5 mm.

第四微波處理系統400的俯視圖包含第一腔控制組件445a的俯視圖，其被顯示連結第一腔調整板446a的俯視圖。第一腔控制組件445a可包含介電材料，且可具有與其相關聯的第一直徑（d_1aa ），且該第一直徑（d_1aa ）可變化於約0.01 mm到約1 mm。第一腔調整板446a可包含介電材料，且可具有與其相關聯的第二直徑（D_1aa ），且該第二直徑（D_1aa ）可變化於約1 mm到約10 mm。第一腔控制組件445a和第一腔調整板446a可具有與其相關聯的第一x/y平面偏移（y_1aa ），且該第一x/y平面偏移（y_1aa ）可變化於約1 mm到約10 mm。The top view of the fourth microwave processing system 400 includes a top view of the first cavity control assembly 445a that is shown in a top view that joins the first cavity adjustment plate 446a. The first cavity control assembly 445a can comprise a dielectric material and can have a first diameter (d _1aa ) associated therewith, and the first diameter (d _1aa ) can vary from about 0.01 mm to about 1 mm. The first cavity adjustment plate 446a can comprise a dielectric material and can have a second diameter (D _1aa ) associated therewith, and the second diameter (D _1aa ) can vary from about 1 mm to about 10 mm. The first cavity control assembly 445a and the first cavity adjustment plate 446a can have a first x/y plane offset (y _1aa ) associated therewith, and the first x/y plane offset (y _1aa ) can vary from about 1 mm to about 10 mm.

此外，第四微波處理系統400的俯視圖包含第二腔控制組件445b的俯視圖，其被顯示連結第二腔調整板446b的俯視圖。第二腔控制組件445b可包含介電材料，且可具有與其相關聯的第一額外直徑（d_1ba ），且該第一額外直徑（d_1ba ）可變化於約0.01 mm到約1 mm。第二腔調整板446b可包含介電材料，且可具有與其相關聯的第二額外直徑（D_1ba ），且該第二額外直徑（D_1ba ）可變化於約1 mm到約10 mm。第二腔控制組件445b和第二腔調整板446b可具有與其相關聯的第二x/y平面偏移（y_1ba ），且第二x/y平面偏移（y_1ba ）可變化於約1 mm到約10 mm。Additionally, the top view of the fourth microwave processing system 400 includes a top view of the second chamber control assembly 445b that is shown in a top view that joins the second chamber adjustment plate 446b. The second cavity control assembly 445b can comprise a dielectric material and can have a first additional diameter (d _1ba ) associated therewith, and the first additional diameter (d _1ba ) can vary from about 0.01 mm to about 1 mm. The second chamber adjustment plate 446b can comprise a dielectric material and can have a second additional diameter (D _1ba ) associated therewith, and the second additional diameter (D _1ba ) can vary from about 1 mm to about 10 mm. The second cavity control component 445b and the second cavity adjustment plate 446b can have a second x/y plane offset (y _1ba ) associated therewith, and the second x/y plane offset (y _1ba ) can vary from about 1 Mm to about 10 mm.

圖4B顯示在第四微波處理系統400中第四製程腔室410的局部切開前視圖。該前視圖顯示互相連結的複數額外的壁412的x/z平面視圖，藉此建立在第四製程腔室410之中的製程空間415的局部切開前視圖。第四微波處理系統400可建構成用以在製程空間415之中形成電漿。4B shows a partially cutaway front view of the fourth process chamber 410 in the fourth microwave processing system 400. The front view shows an x/z plan view of the plurality of additional walls 412 interconnected, thereby establishing a partially cut front view of the process space 415 in the fourth process chamber 410. The fourth microwave processing system 400 can be configured to form a plasma in the process space 415.

第四微波處理系統400的前視圖顯示具有第一EM能量調整空間469a於其中的第一腔組件468a的切開圖，且第一腔組件468a可包含第一腔壁465a、第二腔壁466a、至少一個第三腔壁467a、及一個以上的額外腔壁（未顯示）。舉例而言，第一腔組件468a可利用第一腔壁465a連結至第一介面組件412a。該前視圖亦顯示具有第二EM能量調整空間469b於其中的第二腔組件468b的切開視圖，且該第二腔組件468b可包含第一腔壁465b、第二腔壁466b、至少一個第三腔壁467b、及一個以上額外的腔壁（未顯示）。舉例來說，第二腔組件468b可利用第一腔壁465b連結至第二介面組件412b。A front view of the fourth microwave processing system 400 shows a cutaway view of the first cavity assembly 468a having the first EM energy adjustment space 469a therein, and the first cavity assembly 468a can include a first cavity wall 465a, a second cavity wall 466a, At least one third lumen wall 467a, and more than one additional lumen wall (not shown). For example, the first cavity component 468a can be coupled to the first interface component 412a using the first cavity wall 465a. The front view also shows a cutaway view of the second chamber assembly 468b having the second EM energy adjustment space 469b therein, and the second chamber assembly 468b can include a first chamber wall 465b, a second chamber wall 466b, at least a third Cavity wall 467b, and more than one additional lumen wall (not shown). For example, the second chamber assembly 468b can be coupled to the second interface assembly 412b using the first lumen wall 465b.

在圖4B中顯示第一組電漿調整桿（470a及470b）的局部前視圖（虛線視圖）、第一組電漿調整板（461a及461b）的局部前視圖（虛線視圖）、第二組電漿調整桿（470c及470d）的局部前視圖（虛線視圖）、及第二組電漿調整板（461c及461d）的局部前視圖（虛線視圖）。A partial front view (dashed line view) of the first set of plasma adjustment bars (470a and 470b), a partial front view (dashed line view) of the first set of plasma adjustment plates (461a and 461b), and a second set are shown in FIG. 4B. A partial front view (dashed view) of the plasma adjustment bars (470c and 470d) and a partial front view (dashed view) of the second set of plasma adjustment plates (461c and 461d).

第一組電漿調整桿（470a及470b）與第一組電漿調整板（461a及461b）可具有與其相關聯的第一組x/y平面偏移（x_2a-b ），且該第一組x/y平面偏移（x_2a-b ）可變化於約10 mm到約100 mm。第一組電漿調整桿（470a及470b）與第一組電漿調整板（461a及461b）可具有與其相關聯的第一組x/z平面偏移（z_1a-b ），且該第一組x/z平面偏移（z_1a-b ）可變化於約100 mm到約400 mm。The first set of plasma adjustment rods (470a and 470b) and the first set of plasma adjustment plates (461a and 461b) may have a first set of x/y plane offsets (x _2a-b ) associated therewith, and the first A set of x/y plane offsets (x _2a-b ) can vary from about 10 mm to about 100 mm. The first set of plasma adjustment rods (470a and 470b) and the first set of plasma adjustment plates (461a and 461b) can have a first set of x/z plane offsets (z _1a-b ) associated therewith, and the first A set of x/z plane offsets (z _1a-b ) can vary from about 100 mm to about 400 mm.

第二組電漿調整桿（470c及470d）與第二組電漿調整板（461c及461d）可具有與其相關聯的第二組x/y平面偏移（x_2c-d ），且該第二組x/y平面偏移（x_2c-d ）可變化於約10 mm到約100 mm。第二組電漿調整桿（470c及470d）與第二組電漿調整板（461c及461d）可具有與其相關聯的第二組x/z平面偏移（z_1c-d ），且該第二組x/z平面偏移（z_1c-d ）可變化於約100 mm到約400 mm。The second set of plasma adjustment rods (470c and 470d) and the second set of plasma adjustment plates (461c and 461d) may have a second set of x/y plane offsets (x _2c-d ) associated therewith, and the The two sets of x/y plane offsets (x _2c-d ) can vary from about 10 mm to about 100 mm. The second set of plasma adjustment rods (470c and 470d) and the second set of plasma adjustment plates (461c and 461d) may have a second set of x/z plane offsets (z _1c-d ) associated therewith, and the The two sets of x/z plane offsets (z _1c-d ) can vary from about 100 mm to about 400 mm.

圖4B顯示第四微波處理系統400可包含連結至腔室壁412的一個以上電漿感測器406，以取得第一電漿資料。此外，第四微波處理系統400可建構成用以處理200 mm基板、300 mm基板、或更大尺寸的基板。此外，可配置圓柱形、正方形、和矩形腔室，使得第四微波處理系統400可建構成用以處理圓形、正方形、或矩形的基板、晶圓、或LCD，無論其為熟習此技藝者所知的何種尺寸。因此，雖然將就半導體基板的處理對本發明的實施態樣加以描述，但本發明係不僅限定於此。4B shows that the fourth microwave processing system 400 can include more than one plasma sensor 406 coupled to the chamber wall 412 to obtain the first plasma material. Additionally, the fourth microwave processing system 400 can be constructed to process a 200 mm substrate, a 300 mm substrate, or a larger sized substrate. In addition, cylindrical, square, and rectangular chambers can be configured such that the fourth microwave processing system 400 can be constructed to process a circular, square, or rectangular substrate, wafer, or LCD, whether skilled in the art. What size is known. Therefore, although the embodiment of the present invention will be described with respect to the processing of the semiconductor substrate, the present invention is not limited thereto.

如圖4B所示，第一EM來源450a可耦合至第一腔組件468a，且第二EM來源450b可耦合至第二腔組件468b。第一EM來源450a可耦合至第一匹配網路452a，且第一匹配網路452a可耦合至第一耦合網路454a。第二EM來源450b可耦合至第二匹配網路452b，且第二匹配網路452b可耦合至第二耦合網路454b。或者是，可使用複數匹配網路（未顯示）或複數耦合網路（未顯示）。As shown in FIG. 4B, a first EM source 450a can be coupled to the first chamber assembly 468a and a second EM source 450b can be coupled to the second chamber assembly 468b. The first EM source 450a can be coupled to the first matching network 452a, and the first matching network 452a can be coupled to the first coupling network 454a. The second EM source 450b can be coupled to the second matching network 452b, and the second matching network 452b can be coupled to the second coupling network 454b. Alternatively, a complex matching network (not shown) or a complex coupling network (not shown) may be used.

第一耦合網路454a可被可移除自如地連結至第一腔組件468a，而第一腔組件468a可被可移除自如地連結至製程腔室410的第一介面組件412a的上部。第一耦合網路454a可用以在第一腔組件468a之中提供微波能量至第一EM能量調整空間469a。第二耦合網路454b可被可移除自如地連結至第二腔組件468b，而第二腔組件468b可被可移除自如地連結至製程腔室410的第二介面組件412b的上部。第二耦合網路454b可用以在第二腔組件468b之中提供額外的微波能量至第二EM能量調整空間469b。或者，可使用其他的EM耦合構造。The first coupling network 454a can be removably coupled to the first chamber assembly 468a, and the first chamber assembly 468a can be removably coupled to the upper portion of the first interface assembly 412a of the process chamber 410. The first coupling network 454a can be used to provide microwave energy to the first EM energy adjustment space 469a within the first cavity assembly 468a. The second coupling network 454b can be removably coupled to the second chamber assembly 468b, and the second chamber assembly 468b can be removably coupled to the upper portion of the second interface assembly 412b of the process chamber 410. The second coupling network 454b can be used to provide additional microwave energy to the second EM energy conditioning space 469b within the second cavity assembly 468b. Alternatively, other EM coupling configurations can be used.

如圖4B所示，控制器495可連結496至EM來源（450a、450b）、匹配網路（452a、452b）、耦合網路（454a、454b）、及腔組件（468a、468b），並且控制器495可利用製程配方以建立、控制、及最佳化EM來源（450a、450b）、匹配網路（452a、452b）、耦合網路（454a、454b）、及腔組件（468a、468b），以控制製程空間415之內的電漿均勻性。舉例而言，EM來源（450a、450b）可操作於從約500 MHz到約5000 MHz的頻率。此外，控制器495可連結496至電漿感測器406和製程感測器407，並且控制器495可利用製程配方建立、控制、和最佳化來自電漿感測器406和製程感測器407的資料，以控制製程空間415之內的電漿均勻性。As shown in FIG. 4B, controller 495 can link 496 to EM sources (450a, 450b), matching networks (452a, 452b), coupling networks (454a, 454b), and cavity components (468a, 468b), and control The processor 495 can utilize process recipes to establish, control, and optimize EM sources (450a, 450b), matching networks (452a, 452b), coupling networks (454a, 454b), and cavity components (468a, 468b), To control plasma uniformity within the process space 415. For example, the EM source (450a, 450b) can operate at frequencies from about 500 MHz to about 5000 MHz. In addition, controller 495 can couple 496 to plasma sensor 406 and process sensor 407, and controller 495 can utilize process recipes to establish, control, and optimize from plasma sensor 406 and process sensor. 407 data to control plasma uniformity within process space 415.

此外，控制器495可連結496至氣體供給系統440、氣體供給次組件441、及氣體噴淋頭443。舉例而言，氣體供給系統440、氣體供給次組件441、及氣體噴淋頭443可建構成用以將一種以上製程氣體導入製程空間415，且可包含流量控制和/或流量量測元件。Additionally, controller 495 can couple 496 to gas supply system 440, gas supply subassembly 441, and gas showerhead 443. For example, gas supply system 440, gas supply subassembly 441, and gas showerhead 443 can be configured to direct more than one process gas into process space 415 and can include flow control and/or flow measurement components.

在乾式電漿蝕刻期間，製程氣體可包含蝕刻劑、鈍化劑、或惰性氣體、或其二者以上的組合。舉例而言，當電漿蝕刻例如矽氧化物（SiO_x ）或矽氮化物（Si_x N_y ）之介電膜時，電漿蝕刻氣體成份通常包含氟碳基化學品（C_x F_y ），例如C₄ F₈ 、C₅ F₈ 、C₃ F₆ 、C₄ F₆ 、CF₄ 等其中至少一者，且/或可包含氟烴基化學品（C_x H_y F_z ），例如CHF₃ 、CH₂ F₂ 等其中至少一者，且可具有惰性氣體、氧、CO、或CO₂ 其中至少一者。此外，舉例來說，當蝕刻多晶矽之時，電漿蝕刻氣體成份一般包含含鹵素氣體，例如HBr、Cl₂ 、NF₃ 、或SF₆ 、或其二者以上組合，且可包含氟烴基化學品（C_x H_y F_z ），例如CHF₃ 、CH₂ F₂ 等其中至少一者，及惰性氣體、氧、CO、或CO₂ 其中至少一者、或其二者以上。在電漿輔助沉積期間，製程氣體可包含膜形成前驅物、還原氣體、或惰性氣體、或其二者以上之組合。During dry plasma etching, the process gas may comprise an etchant, a passivating agent, or an inert gas, or a combination of two or more thereof. For example, when a plasma etches a dielectric film such as tantalum oxide (SiO _x ) or tantalum nitride (Si _x N _y ), the plasma etching gas component usually contains a fluorocarbon-based chemical (C _x F _y ). For example, at least one of C ₄ F ₈ , C ₅ F ₈ , C ₃ F ₆ , C ₄ F ₆ , CF _{4 ,} etc., and/or may comprise a fluorocarbon based chemical (C _x H _y F _z ), such as CHF ₃ , at least one of CH ₂ F ₂ and the like, and may have at least one of an inert gas, oxygen, CO, or CO ₂ . Further, for example, when etching a polysilicon, the plasma etching gas component generally comprises a halogen-containing gas such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or a combination of two or more thereof, and may include a fluorocarbon-based chemical. (C _x H _y F _z ), for example, at least one of CHF ₃ , CH ₂ F _{2 ,} and the like, and at least one of inert gas, oxygen, CO, or CO ₂ , or two or more thereof. During plasma assisted deposition, the process gas may comprise a film forming precursor, a reducing gas, or an inert gas, or a combination of two or more thereof.

如圖4B所示，第四微波處理系統400可包含壓力控制系統490及埠491，其連結至製程腔室410且建構成用以排空製程腔室410並控制製程腔室410之內的壓力。此外，第四微波處理系統400可包含基板固持器420，用於將基板405安裝於製程空間415之中。As shown in FIG. 4B, the fourth microwave processing system 400 can include a pressure control system 490 and a port 491 coupled to the process chamber 410 and configured to evacuate the process chamber 410 and control the pressure within the process chamber 410. . Additionally, the fourth microwave processing system 400 can include a substrate holder 420 for mounting the substrate 405 in the process space 415.

第四微波處理系統400的前視圖包含第一腔控制組件445a的局部前視圖，其被顯示連結至第一腔調整板446a的前視圖。第一腔控制組件445a和第一腔調整板446a可具有與其關聯的第一x/z平面偏移（z_1aa ），且該第一x/z平面偏移（z_1aa ）可變化於約1 mm到約10 mm。The front view of the fourth microwave processing system 400 includes a partial front view of the first cavity control assembly 445a that is shown coupled to the front view of the first cavity adjustment plate 446a. The first cavity control component 445a and the first cavity adjustment plate 446a can have a first x/z plane offset (z _1aa ) associated therewith, and the first x/z plane offset (z _1aa ) can vary from about 1 Mm to about 10 mm.

第一腔控制組件445a可用以在第一EM能量調整空間469a之內移動447a第一腔調整板446a第四腔調整距離448a。控制器495可連結496至第一腔控制組件445a，且控制器495可使用製程配方來建立、控制、及最佳化第四腔調整距離448a，以即時控制和維持在製程空間415之內的電漿均勻性。舉例而言，第四腔調整距離448a可變化於約0.01 mm到約10 mm，且第四腔調整距離448a可為波長相依的，且可變化於約（λ/4）到約（10λ）。The first chamber control assembly 445a can be used to move 447a the first chamber adjustment plate 446a within the first EM energy adjustment space 469a by the fourth chamber adjustment distance 448a. The controller 495 can couple 496 to the first cavity control component 445a, and the controller 495 can use the process recipe to establish, control, and optimize the fourth cavity adjustment distance 448a for immediate control and maintenance within the process space 415. Plasma uniformity. For example, the fourth cavity adjustment distance 448a can vary from about 0.01 mm to about 10 mm, and the fourth cavity adjustment distance 448a can be wavelength dependent and can vary from about (λ/4) to about (10λ).

此外，第四微波處理系統400的前視圖包含第二腔控制組件445b的局部前視圖，其被顯示連結至第二腔調整板446b的前視圖。第二腔控制組件445b和第二腔調整板446b可具有與其關聯的第二x/z平面偏移（z_1ba ），且該第二x/z平面偏移（z_1ba ）可變化於約1 mm到約10 mm。Additionally, the front view of the fourth microwave processing system 400 includes a partial front view of the second cavity control assembly 445b that is shown coupled to the front view of the second cavity adjustment plate 446b. The second cavity control component 445b and the second cavity adjustment plate 446b can have a second x/z plane offset (z _1ba ) associated therewith, and the second x/z plane offset (z _1ba ) can vary from about 1 Mm to about 10 mm.

第二腔控制組件445b可用以在第二EM能量調整空間469b之內移動447b第二腔調整板446b第二腔調整距離448b。控制器495可連結至第二腔控制組件445b，且控制器495可使用製程配方來建立、控制、及最佳化第二腔調整距離448b，以即時控制和維持在製程空間415之內的電漿均勻性。舉例而言，第二腔調整距離448b可變化於約0.01 mm到約10 mm，且第二腔調整距離448b可為波長相依的，且可變化於約（λ/4）到約（10λ）。The second chamber control assembly 445b can be used to move the 447b second chamber adjustment plate 446b the second chamber adjustment distance 448b within the second EM energy adjustment space 469b. Controller 495 can be coupled to second chamber control component 445b, and controller 495 can use process recipes to establish, control, and optimize second chamber adjustment distance 448b for immediate control and maintenance of power within process space 415 Slurry uniformity. For example, the second cavity adjustment distance 448b can vary from about 0.01 mm to about 10 mm, and the second cavity adjustment distance 448b can be wavelength dependent and can vary from about (λ/4) to about (10λ).

圖4C顯示在第四微波處理系統400之中第四製程腔室410的局部切開側視圖。該側視圖顯示連結至第一介面組件412a和第二介面組件412b的複數腔室壁412的y/z平面視圖，藉此建立在製程腔室410之中的製程空間415的局部切開側視圖。第四微波處理系統400可建構成用以在製程空間415之中形成電漿。4C shows a partial cutaway side view of the fourth process chamber 410 in the fourth microwave processing system 400. The side view shows a y/z plan view of the plurality of chamber walls 412 joined to the first interface component 412a and the second interface component 412b, thereby establishing a partially cutaway side view of the process space 415 in the process chamber 410. The fourth microwave processing system 400 can be configured to form a plasma in the process space 415.

在圖4C中顯示在第一腔組件468a中的第一EM能量調整空間469a的局部側視圖與在第二腔組件468b中的第二EM能量調整空間469b的局部側視圖。在圖4C中顯示第一組電漿調整桿（470a及470b）的局部側視圖、第一組電漿調整板（461a及461b）的局部側視圖、第二組電漿調整桿（470c及470d）的局部側視圖、及第二組電漿調整板（461c及461d）的局部側視圖。A partial side view of the first EM energy adjustment space 469a in the first chamber assembly 468a and a partial side view of the second EM energy adjustment space 469b in the second chamber assembly 468b are shown in FIG. 4C. A partial side view of the first set of plasma adjustment rods (470a and 470b), a partial side view of the first set of plasma adjustment plates (461a and 461b), and a second set of plasma adjustment rods (470c and 470d) are shown in Figure 4C. A partial side view of the) and a partial side view of the second set of plasma conditioning plates (461c and 461d).

在圖4C中亦顯示第一組隔離組件（464a及464b）與第二組隔離組件（464c及464d）的側視圖。舉例來說，第一組隔離組件（464a及464b）可用以將第一組電漿調整桿﹛（470a及470b）和（475a及475b）﹜可移除自如地連結至第一介面組件412a。第一組隔離組件（464a及464b）每一者可被可移除自如地連結至第一介面組件412a。此外，第二組隔離組件（464c及464d）可用以將第二組電漿調整桿﹛（470c及470d）和（475c及475d）﹜可移除自如地連結至第二介面組件412b。第二組隔離組件（464c及464d）每一者可被可移除自如地連結至第二介面組件412b。A side view of the first set of isolation assemblies (464a and 464b) and the second set of isolation assemblies (464c and 464d) is also shown in Figure 4C. For example, the first set of isolation assemblies (464a and 464b) can be used to removably couple the first set of plasma adjustment rods {(470a and 470b) and (475a and 475b)} to the first interface assembly 412a. The first set of isolation components (464a and 464b) can each be removably coupled to the first interface component 412a. Additionally, a second set of isolation assemblies (464c and 464d) can be used to removably couple the second set of plasma adjustment rods {(470c and 470d) and (475c and 475d)} to the second interface assembly 412b. The second set of isolation components (464c and 464d) can each be removably coupled to the second interface component 412b.

如圖4C所示，第一組電漿調整板（461a及461b）可連結至第一組控制組件（460a及460b），且第一組控制組件（460a及460b）可用以在第一EM能量調整空間469a之內，將第一組電漿調整板（461a及461b）相對於EM調整部（475a及475b）移動（463a及463b）第一組EM調整距離（477a及477b）。此外，第二組電漿調整板（461c及461d）可連結至第二組控制組件（460c及460d），且第二組控制組件（460c及460d）可用以在第二EM能量調整空間469b之內，將第二組電漿調整板（461c及461d）相對於EM調整部（475c及475d）移動（463c及463d）第二組EM調整距離（477c及477d）。As shown in FIG. 4C, a first set of plasma conditioning plates (461a and 461b) can be coupled to the first set of control components (460a and 460b), and a first set of control components (460a and 460b) can be used to the first EM energy. Within the adjustment space 469a, the first set of plasma adjustment plates (461a and 461b) are moved (463a and 463b) relative to the EM adjustment portions (475a and 475b) by the first set of EM adjustment distances (477a and 477b). In addition, a second set of plasma conditioning plates (461c and 461d) can be coupled to the second set of control components (460c and 460d), and a second set of control components (460c and 460d) can be utilized in the second EM energy conditioning space 469b Inside, the second set of plasma adjustment plates (461c and 461d) are moved (463c and 463d) relative to the EM adjustment sections (475c and 475d) by the second set of EM adjustment distances (477c and 477d).

第一組控制組件（460a及460b）可連結至控制器495，且控制器495可使用製程配方來建立、控制、和最佳化第一組EM調整距離（477a及 477b），以控制在製程空間415之內的電漿均勻性。此外，第二組控制組件（460c及460d）可連結至控制器495，且控制器495可使用製程配方來建立、控制、和最佳化第二組EM調整距離（477c及477d），以控制在製程空間415之內的電漿均勻性。The first set of control components (460a and 460b) can be coupled to controller 495, and controller 495 can use process recipes to establish, control, and optimize the first set of EM adjustment distances (477a and 477b) to control the process Plasma uniformity within space 415. Additionally, a second set of control components (460c and 460d) can be coupled to controller 495, and controller 495 can use process recipes to establish, control, and optimize a second set of EM adjustment distances (477c and 477d) to control Plasma uniformity within process space 415.

控制器495可連結496至EM來源（450a、450b）、匹配網路（452a、452b）、耦合網路（454a、454b）、及腔組件（468a、468b），且控制器495可利用製程配方來建立、控制、及最佳化EM來源（450a、450b）、匹配網路（452a、452b）、耦合網路（454a、454b）、及腔組件（468a、468b），以控制在製程空間415之內的電漿均勻性。舉例來說，EM來源（450a、450b）可操作於約500 MHz到約5000 MHz之頻率。此外，控制器495可連結496至電漿感測器406、製程感測器407、及腔感測器（408a及408b），且控制器495可利用製程配方來建立、控制、及最佳化來自電漿感測器406、製程感測器407、及腔感測器（408a及408b）的資料，以控制在製程空間415之內的電漿均勻性。Controller 495 can couple 496 to EM sources (450a, 450b), matching networks (452a, 452b), coupling networks (454a, 454b), and cavity components (468a, 468b), and controller 495 can utilize process recipes To establish, control, and optimize EM sources (450a, 450b), matching networks (452a, 452b), coupling networks (454a, 454b), and cavity components (468a, 468b) for control in process space 415 Plasma uniformity within. For example, the EM source (450a, 450b) can operate at frequencies from about 500 MHz to about 5000 MHz. In addition, the controller 495 can connect 496 to the plasma sensor 406, the process sensor 407, and the cavity sensors (408a and 408b), and the controller 495 can be established, controlled, and optimized using the process recipe. Information from plasma sensor 406, process sensor 407, and cavity sensors (408a and 408b) to control plasma uniformity within process space 415.

該側視圖描述製程腔室410，其具有在y/z平面之與其相關聯的全寬（y_T ）和全高（z_T ）。舉例來說，該全寬（y_T ）可變化於約50 mm到約500 mm，且該全高（z_T ）可變化於約50 mm到約500 mm。This side view depicts the process chamber 410 having its full width (y _T ) and full height (z _T ) associated with it in the y/z plane. For example, the full width (y _T ) can vary from about 50 mm to about 500 mm, and the full height (z _T ) can vary from about 50 mm to about 500 mm.

圖5A-5D顯示根據本發明實施例之例示電漿調整桿的不同視圖。圖5A顯示第一例示電漿調整桿（570a, 575a）的前視圖和側視圖。第一電漿調整部570a可具有與其相關聯的第一長度（y₁₁ ），且第一長度（y₁₁ ）可變化於約1 mm到約400 mm。第一EM調整部575a可具有與其相關聯的長度（y₁₂ ），且長度（y₁₂ ）可變化於約1 mm到約400 mm。第一電漿調整部570a和第一EM調整部575a可具有與其相關聯的第一高度（x₁ ），且第一高度（x₁ ）可變化於約0.1 mm到約10 mm。第一電漿調整部570a和第一EM調整部575a可具有與其相關聯的第一寬度（z₁ ），且第一寬度（z₁ ）可變化於約0.1 mm到約10 mm。5A-5D show different views of an exemplary plasma adjustment rod in accordance with an embodiment of the present invention. Figure 5A shows a front view and a side view of a first exemplary plasma adjustment rod (570a, 575a). The first plasma adjustment portion 570a can have a first length (y ₁₁ ) associated therewith, and the first length (y ₁₁ ) can vary from about 1 mm to about 400 mm. The first EM adjustment portion 575a may have a length (y ₁₂ ) associated therewith, and the length (y ₁₂ ) may vary from about 1 mm to about 400 mm. The first plasma adjustment portion 570a and the first EM adjustment portion 575a may have a first height (x ₁ ) associated therewith, and the first height (x ₁ ) may vary from about 0.1 mm to about 10 mm. The first plasma adjustment portion 570a and the first EM adjustment portion 575a may have a first width (z ₁ ) associated therewith, and the first width (z ₁ ) may vary from about 0.1 mm to about 10 mm.

圖5B顯示第二例示電漿調整桿（570b, 575b）的前視圖和側視圖。第二電漿調整部570b可具有與其相關聯的第一長度（y₂₁ ），且第一長度（y₂₁ ）可變化於約1 mm到約400 mm。第二EM調整部575b可具有與其相關聯的長度（y₂₂ ），且長度（y₂₂ ）可變化於約1 mm到約400 mm。第二電漿調整部570b和第二EM調整部575b可具有與其相關聯的第二高度（x₂ ），且第二高度（x₂ ）可變化於約0.1 mm到約10 mm。第二電漿調整部570b和第二EM調整部575b可具有與其相關聯的第二寬度（z₂ ），且第二寬度（z₂ ）可變化於約0.1 mm到約10 mm。Figure 5B shows a front view and a side view of a second exemplary plasma adjustment rod (570b, 575b). The second plasma conditioning portion 570b can have a first length (y ₂₁ ) associated therewith, and the first length (y ₂₁ ) can vary from about 1 mm to about 400 mm. The second EM adjustment portion 575b may have a length (y ₂₂ ) associated therewith, and the length (y ₂₂ ) may vary from about 1 mm to about 400 mm. The second plasma adjustment portion 570b and the second EM adjustment portion 575b may have a second height (x ₂ ) associated therewith, and the second height (x ₂ ) may vary from about 0.1 mm to about 10 mm. The second plasma adjustment portion 570b and the second EM adjustment portion 575b may have a second width (z ₂ ) associated therewith, and the second width (z ₂ ) may vary from about 0.1 mm to about 10 mm.

圖5C顯示第三例示電漿調整桿（570c, 575c）的前視圖和側視圖。第三電漿調整部570c可具有與其相關聯的第三長度（y₃₁ ），且第三長度（y₃₁ ）可變化於約1 mm到約400 mm。第三EM調整部575c可具有與其相關聯的長度（y₃₂ ），且長度（y₃₂ ）可變化於約1 mm到約400 mm。第三電漿調整部570c和第三EM調整部575c可具有與其相關聯的第三高度（x₃ ），且第三高度（x₃ ）可變化於約0.1 mm到約10 mm。第三電漿調整部570c和第三EM調整部575c可具有與其相關聯的第三寬度（z₃ ），且第三寬度（z₃ ）可變化於約0.1 mm到約10 mm。Figure 5C shows a front view and a side view of a third exemplary plasma adjustment rod (570c, 575c). The third plasma adjustment portion 570c may have a third length (y ₃₁ ) associated therewith, and the third length (y ₃₁ ) may vary from about 1 mm to about 400 mm. The third EM adjustment portion 575c may have a length (y ₃₂ ) associated therewith, and the length (y ₃₂ ) may vary from about 1 mm to about 400 mm. The third plasma adjustment portion 570c and the third EM adjustment portion 575c may have a third height (x ₃ ) associated therewith, and the third height (x ₃ ) may vary from about 0.1 mm to about 10 mm. The third plasma adjustment portion 570c and the third EM adjustment portion 575c may have a third width (z ₃ ) associated therewith, and the third width (z ₃ ) may vary from about 0.1 mm to about 10 mm.

圖5D顯示第四例示電漿調整桿（570d, 575d）的前視圖和側視圖。第四電漿調整部570d可具有與其相關聯的第四長度（y₄₁ ），且第四長度（y₄₁ ）可變化於約1 mm到約400 mm。第四EM調整部575d可具有與其相關聯的長度（y₄₂ ），且長度（y₄₂ ）可變化於約1 mm到約400 mm。第四電漿調整部570d和第四EM調整部575d可具有與其相關聯的第四高度（x₄ ），且第四高度（x₄ ）可變化於約0.1 mm到約10 mm。第四電漿調整部570d和第四EM調整部575d可具有與其相關聯的第四寬度（z₄ ），且第四寬度（z₄ ）可變化於約0.1 mm到約10 mm。Figure 5D shows a front view and a side view of a fourth exemplary plasma adjustment rod (570d, 575d). The fourth plasma adjustment portion 570d may have a fourth length (y ₄₁ ) associated therewith, and the fourth length (y ₄₁ ) may vary from about 1 mm to about 400 mm. The fourth EM adjustment portion 575d may have a length (y ₄₂ ) associated therewith, and the length (y ₄₂ ) may vary from about 1 mm to about 400 mm. The fourth plasma adjustment portion 570d and the fourth EM adjustment portion 575d may have a fourth height (x ₄ ) associated therewith, and the fourth height (x ₄ ) may vary from about 0.1 mm to about 10 mm. The fourth plasma adjustment portion 570d and the fourth EM adjustment portion 575d may have a fourth width (z ₄ ) associated therewith, and the fourth width (z ₄ ) may vary from about 0.1 mm to about 10 mm.

圖6A-6D顯示根據本發明實施例之例示電漿調整桿的不同視圖。圖6A顯示第一例示電漿調整桿（670a, 675a）的前視圖和側視圖。第一電漿調整部670a可具有與其相關聯的第一長度（y₁₁ ），且第一長度（y₁₁ ）可變化於約1 mm到約400 mm。第一EM調整部675a可具有與其相關聯的長度（y₁₂ ），且長度（y₁₂ ）可變化於約1 mm到約400 mm。第一電漿調整部670a和第一EM調整部675a可具有與其相關聯的第一高度（x₁ ），且第一高度（x₁ ）可變化於約0.1 mm到約10 mm。第一電漿調整部670a和第一EM調整部675a可具有與其相關聯的第一寬度（z₁ ），且第一寬度（z₁ ）可變化於約0.1 mm到約10 mm。第一電漿調整部670a和第一EM調整部675a可具有與其相關聯的第一厚度（t_z1 ），且第一厚度（t_z1 ）可變化於約0.01 mm到約1 mm。6A-6D show different views of an exemplary plasma adjustment rod in accordance with an embodiment of the present invention. Figure 6A shows a front view and a side view of a first exemplary plasma adjustment rod (670a, 675a). The first plasma adjustment portion 670a can have a first length (y ₁₁ ) associated therewith, and the first length (y ₁₁ ) can vary from about 1 mm to about 400 mm. The first EM adjustment portion 675a may have a length (y ₁₂ ) associated therewith, and the length (y ₁₂ ) may vary from about 1 mm to about 400 mm. The first plasma adjustment portion 670a and the first EM adjustment portion 675a may have a first height (x ₁ ) associated therewith, and the first height (x ₁ ) may vary from about 0.1 mm to about 10 mm. The first plasma adjustment portion 670a and the first EM adjustment portion 675a may have a first width (z ₁ ) associated therewith, and the first width (z ₁ ) may vary from about 0.1 mm to about 10 mm. The first plasma adjustment portion 670a and the first EM adjustment portion 675a may have a first thickness (t _z1 ) associated therewith, and the first thickness (t _z1 ) may vary from about 0.01 mm to about 1 mm.

圖6B顯示第二例示電漿調整桿（670b, 675b）的前視圖和側視圖。第二電漿調整部670b可具有與其相關聯的第一長度（y₂₁ ），且第一長度（y₂₁ ）可變化於約1 mm到約400 mm。第二EM調整部675b可具有與其相關聯的長度（y₂₂ ），且長度（y₂₂ ）可變化於約1 mm到約400 mm。第二電漿調整部670b和第二EM調整部675b可具有與其相關聯的第二高度（x₂ ），且第二高度（x₂ ）可變化於約0.1 mm到約10 mm。第二電漿調整部670b和第二EM調整部675b可具有與其相關聯的第二寬度（z₂ ），且第二寬度（z₂ ）可變化於約0.1 mm到約10 mm。第二電漿調整部670b和第二EM調整部675b可具有與其相關聯的第二厚度（t_z2 ），且第二厚度（t_z2 ）可變化於約0.01 mm到約1 mm。Figure 6B shows a front view and a side view of a second exemplary plasma adjustment rod (670b, 675b). The second plasma adjustment portion 670b can have a first length (y ₂₁ ) associated therewith, and the first length (y ₂₁ ) can vary from about 1 mm to about 400 mm. The second EM adjustment portion 675b may have a length (y ₂₂ ) associated therewith, and the length (y ₂₂ ) may vary from about 1 mm to about 400 mm. The second plasma adjustment portion 670b and the second EM adjustment portion 675b may have a second height (x ₂ ) associated therewith, and the second height (x ₂ ) may vary from about 0.1 mm to about 10 mm. The second plasma adjustment portion 670b and the second EM adjustment portion 675b may have a second width (z ₂ ) associated therewith, and the second width (z ₂ ) may vary from about 0.1 mm to about 10 mm. The second plasma adjustment portion 670b and the second EM adjustment portion 675b may have a second thickness (t _z2 ) associated therewith, and the second thickness (t _z2 ) may vary from about 0.01 mm to about 1 mm.

圖6C顯示第三例示電漿調整桿（670c, 675c）的前視圖和側視圖。第三電漿調整部670c可具有與其相關聯的第三長度（y₃₁ ），且第三長度（y₃₁ ）可變化於約1 mm到約400 mm。第三EM調整部675c可具有與其相關聯的長度（y₃₂ ），且長度（y₃₂ ）可變化於約1 mm到約400 mm。第三電漿調整部670c和第三EM調整部675c可具有與其相關聯的第三高度（x₃ ），且第三高度（x₃ ）可變化於約0.1 mm到約10 mm。第三電漿調整部670c和第三EM調整部675c可具有與其相關聯的第三寬度（z₃ ），且第三寬度（z₃ ）可變化於約0.1 mm到約10 mm。第三電漿調整部670c和第三EM調整部675c可具有與其相關聯的第三厚度（t_z3 及t_x3 ），且第三厚度（t_z3 及t_x3 ）可變化於約0.01 mm到約1 mm。Fig. 6C shows a front view and a side view of a third exemplary plasma adjusting rod (670c, 675c). The third plasma adjustment portion 670c may have a third length (y ₃₁ ) associated therewith, and the third length (y ₃₁ ) may vary from about 1 mm to about 400 mm. The third EM adjustment portion 675c may have a length (y ₃₂ ) associated therewith, and the length (y ₃₂ ) may vary from about 1 mm to about 400 mm. The third plasma adjustment portion 670c and the third EM adjustment portion 675c may have a third height (x ₃ ) associated therewith, and the third height (x ₃ ) may vary from about 0.1 mm to about 10 mm. The third plasma adjustment portion 670c and the third EM adjustment portion 675c may have a third width (z ₃ ) associated therewith, and the third width (z ₃ ) may vary from about 0.1 mm to about 10 mm. The third plasma adjusting portion 670c and the third EM adjusting portion 675c may have a third thickness (t _z3 and t _x3 ) associated therewith, and the third thickness (t _z3 and t _x3 ) may vary from about 0.01 mm to about 1 mm.

圖6D顯示第四例示電漿調整桿（670d, 675d）的前視圖和側視圖。第四電漿調整部670d可具有與其相關聯的第四長度（y₄₁ ），且第四長度（y₄₁ ）可變化於約1 mm到約400 mm。第四EM調整部675d可具有與其相關聯的長度（y₄₂ ），且長度（y₄₂ ）可變化於約1 mm到約400 mm。第四電漿調整部670d和第四EM調整部675d可具有與其相關聯的第四高度（x₄ ），且第四高度（x₄ ）可變化於約0.1 mm到約10 mm。第四電漿調整部670d和第四EM調整部675d可具有與其相關聯的第四寬度（z₄ ），且第四寬度（z₄ ）可變化於約0.1 mm到約10 mm。第四電漿調整部670d和第四EM調整部675d可具有與其相關聯的第四厚度（t_z4 及t_x4 ），且第四厚度（t_z4 及t_x4 ）可變化於約0.01 mm到約1 mm。Fig. 6D shows a front view and a side view of a fourth exemplary plasma adjusting lever (670d, 675d). The fourth plasma adjustment portion 670d may have a fourth length (y ₄₁ ) associated therewith, and the fourth length (y ₄₁ ) may vary from about 1 mm to about 400 mm. The fourth EM adjustment portion 675d may have a length (y ₄₂ ) associated therewith, and the length (y ₄₂ ) may vary from about 1 mm to about 400 mm. The fourth plasma adjustment portion 670d and the fourth EM adjustment portion 675d may have a fourth height (x ₄ ) associated therewith, and the fourth height (x ₄ ) may vary from about 0.1 mm to about 10 mm. The fourth plasma adjustment portion 670d and the fourth EM adjustment portion 675d may have a fourth width (z ₄ ) associated therewith, and the fourth width (z ₄ ) may vary from about 0.1 mm to about 10 mm. The fourth plasma adjusting portion 670d and the fourth EM adjusting portion 675d may have a fourth thickness (t _z4 and t _x4 ) associated therewith, and the fourth thickness (t _z4 and t _x4 ) may vary from about 0.01 mm to about 1 mm.

圖7A-7D顯示根據本發明實施例之例示電漿調整桿的不同視圖。圖7A顯示第一例示電漿調整桿（770a, 775a）的前視圖和側視圖。第一電漿調整部770a可具有與其相關聯的第一長度（y₁₁ ），且第一長度（y₁₁ ）可變化於約1 mm到約400 mm。第一EM調整部775a可具有與其相關聯的長度（y₁₂ ），且長度（y₁₂ ）可變化於約1 mm到約400 mm。第一電漿調整部770a和第一EM調整部775a可具有與其相關聯的第一高度（x₁ ），且第一高度（x₁ ）可變化於約0.1 mm到約10 mm。第一電漿調整部770a和第一EM調整部775a可具有與其相關聯的第一寬度（z₁ ），且第一寬度（z₁ ）可變化於約0.1 mm到約10 mm。第一溫度控制迴路772a可配置於第一例示電漿調整桿（770a, 775a）之內。舉例來說，溫度控制流體和/或氣體可流動通過第一溫度控制迴路772a，以控制第一例示電漿調整桿（770a, 775a）的溫度。第一溫度控制迴路772a可具有與其相關聯的第一直徑（d_z1 ），且第一直徑（d_z1 ）可變化於約0.001 mm到約0.1 mm。此外，第一溫度控制迴路772a具有與其相關聯的第一偏移（l_x11 及l_x12 ），且第一偏移（l_x11 及l_x12 ）可變化於約0.01 mm到約0.1 mm。7A-7D show different views of an exemplary plasma adjustment rod in accordance with an embodiment of the present invention. Fig. 7A shows a front view and a side view of the first exemplary plasma adjusting rods (770a, 775a). The first plasma adjustment portion 770a can have a first length (y ₁₁ ) associated therewith, and the first length (y ₁₁ ) can vary from about 1 mm to about 400 mm. The first EM adjustment portion 775a may have a length (y ₁₂ ) associated therewith, and the length (y ₁₂ ) may vary from about 1 mm to about 400 mm. The first plasma adjustment portion 770a and the first EM adjustment portion 775a may have a first height (x ₁ ) associated therewith, and the first height (x ₁ ) may vary from about 0.1 mm to about 10 mm. The first plasma adjustment portion 770a and the first EM adjustment portion 775a may have a first width (z ₁ ) associated therewith, and the first width (z ₁ ) may vary from about 0.1 mm to about 10 mm. The first temperature control loop 772a can be disposed within the first exemplary plasma adjustment rod (770a, 775a). For example, temperature control fluids and/or gases may flow through the first temperature control loop 772a to control the temperature of the first exemplary plasma conditioning rod (770a, 775a). The first temperature control loop 772a can have a first diameter (d _z1 ) associated therewith, and the first diameter (d _z1 ) can vary from about 0.001 mm to about 0.1 mm. Further, a first temperature control circuit 772a has a first offset (l _x11 and l _x12) associated therewith, and the first offset (l _x11 and l _x12) may vary from about 0.01 mm to about 0.1 mm.

圖7B顯示第二例示電漿調整桿（770b, 775b）的前視圖和側視圖。第二電漿調整部770b可具有與其相關聯的第一長度（y₂₁ ），且第一長度（y₂₁ ）可變化於約1 mm到約400 mm。第二EM調整部775b可具有與其相關聯的長度（y₂₂ ），且長度（y₂₂ ）可變化於約1 mm到約400 mm。第二電漿調整部770b和第二EM調整部775b可具有與其相關聯的第二高度（x₂ ），且第二高度（x₂ ）可變化於約0.1 mm到約10 mm。第二電漿調整部770b和第二EM調整部775b可具有與其相關聯的第二寬度（z₂ ），且第二寬度（z₂ ）可變化於約0.1 mm到約10 mm。第二溫度控制迴路772b可配置於第二例示電漿調整桿（770b, 775b）之內。舉例來說，溫度控制流體和/或氣體可流動通過第二溫度控制迴路772b，以控制第二例示電漿調整桿（770b, 775b）的溫度。第二溫度控制迴路772b可具有與其相關聯的第二直徑（d_z2 ），且第二直徑（d_z2 ）可變化於約0.001 mm到約0.1 mm。此外，第二溫度控制迴路772b具有與其相關聯的第二偏移（l_x21 及l_x22 ），且第二偏移（l_x21 及l_x22 ）可變化於約0.01 mm到約0.1 mm。Figure 7B shows a front view and a side view of a second exemplary plasma adjustment rod (770b, 775b). The second plasma adjustment portion 770b can have a first length (y ₂₁ ) associated therewith, and the first length (y ₂₁ ) can vary from about 1 mm to about 400 mm. The second EM adjustment portion 775b may have a length (y ₂₂ ) associated therewith, and the length (y ₂₂ ) may vary from about 1 mm to about 400 mm. The second plasma adjustment portion 770b and the second EM adjustment portion 775b may have a second height (x ₂ ) associated therewith, and the second height (x ₂ ) may vary from about 0.1 mm to about 10 mm. The second plasma adjustment portion 770b and the second EM adjustment portion 775b may have a second width (z ₂ ) associated therewith, and the second width (z ₂ ) may vary from about 0.1 mm to about 10 mm. The second temperature control loop 772b can be disposed within the second exemplary plasma adjustment rod (770b, 775b). For example, temperature control fluids and/or gases may flow through the second temperature control loop 772b to control the temperature of the second exemplary plasma conditioning rod (770b, 775b). The second temperature control loop 772b can have a second diameter (d _z2 ) associated therewith, and the second diameter (d _z2 ) can vary from about 0.001 mm to about 0.1 mm. Further, the second temperature control circuit 772b having associated therewith a second offset (l _x21 and l _x22), and a second offset (l _x21 and l _x22) may vary from about 0.01 mm to about 0.1 mm.

圖7C顯示第三例示電漿調整桿（770c, 775c）的前視圖和側視圖。第三電漿調整部770c可具有與其相關聯的第三長度（y₃₁ ），且第三長度（y₃₁ ）可變化於約1 mm到約400 mm。第三EM調整部775c可具有與其相關聯的長度（y₃₂ ），且長度（y₃₂ ）可變化於約1 mm到約400 mm。第三電漿調整部770c和第三EM調整部775c可具有與其相關聯的第三高度（x₃ ），且第三高度（x₃ ）可變化於約0.1 mm到約10 mm。第三電漿調整部770c和第三EM調整部775c可具有與其相關聯的第三寬度（z₃ ），且第三寬度（z₃ ）可變化於約0.1 mm到約10 mm。第三溫度控制迴路772c可配置於第三例示電漿調整桿（770c, 775c）之內。舉例來說，溫度控制流體和/或氣體可流動通過第三溫度控制迴路772c，以控制第三例示電漿調整桿（770c, 775c）的溫度。第三溫度控制迴路772c可具有與其相關聯的第三直徑（d_z3 ），且第三直徑（d_z3 ）可變化於約0.001 mm到約0.1 mm。此外，第三溫度控制迴路772c具有與其相關聯的第三偏移（l_x31 及l_x32 ），且第三偏移（l_x31 及l_x32 ）可變化於約0.01 mm到約0.1 mm。Fig. 7C shows a front view and a side view of a third exemplary plasma adjusting rod (770c, 775c). The third plasma adjustment portion 770c may have a third length (y ₃₁ ) associated therewith, and the third length (y ₃₁ ) may vary from about 1 mm to about 400 mm. The third EM adjustment portion 775c may have a length (y ₃₂ ) associated therewith, and the length (y ₃₂ ) may vary from about 1 mm to about 400 mm. The third plasma adjustment portion 770c and the third EM adjustment portion 775c may have a third height (x ₃ ) associated therewith, and the third height (x ₃ ) may vary from about 0.1 mm to about 10 mm. The third plasma adjustment portion 770c and the third EM adjustment portion 775c may have a third width (z ₃ ) associated therewith, and the third width (z ₃ ) may vary from about 0.1 mm to about 10 mm. The third temperature control loop 772c can be disposed within the third exemplary plasma adjustment rod (770c, 775c). For example, temperature control fluids and/or gases may flow through the third temperature control loop 772c to control the temperature of the third exemplary plasma conditioning rod (770c, 775c). The third temperature control loop 772c can have a third diameter (d _z3 ) associated therewith, and the third diameter (d _z3 ) can vary from about 0.001 mm to about 0.1 mm. In addition, a third temperature control circuit 772c having a third offset associated therewith (l _x31 and l _x32), and a third offset (l _x31 and l _x32) may vary from about 0.01 mm to about 0.1 mm.

圖7D顯示第四例示電漿調整桿（770d, 775d）的前視圖和側視圖。第四電漿調整部770d可具有與其相關聯的第四長度（y₄₁ ），且第四長度（y₄₁ ）可變化於約1 mm到約400 mm。第四EM調整部775d可具有與其相關聯的長度（y₄₂ ），且長度（y₄₂ ）可變化於約1 mm到約400 mm。第四電漿調整部770d和第四EM調整部775d可具有與其相關聯的第四高度（x₄ ），且第四高度（x₄ ）可變化於約0.1 mm到約10 mm。第四電漿調整部770d和第四EM調整部775d可具有與其相關聯的第四寬度（z₄ ），且第四寬度（z₄ ）可變化於約0.1 mm到約10 mm。第四溫度控制迴路772d可配置於第四例示電漿調整桿（770d, 775d）之內。舉例來說，溫度控制流體和/或氣體可流動通過第四溫度控制迴路772d，以控制第四例示電漿調整桿（770d, 775d）的溫度。第四溫度控制迴路772d可具有與其相關聯的第四直徑（d_z4 ），且第四直徑（d_z4 ）可變化於約0.001 mm到約0.1 mm。此外，第四溫度控制迴路772d具有與其相關聯的第四偏移（l_x41 及l_x42 ），且第四偏移（l_x41 及l_x42 ）可變化於約0.01 mm到約0.1 mm。Figure 7D shows a front view and a side view of a fourth exemplary plasma adjustment rod (770d, 775d). The fourth plasma adjustment portion 770d may have a fourth length (y ₄₁ ) associated therewith, and the fourth length (y ₄₁ ) may vary from about 1 mm to about 400 mm. The fourth EM adjustment portion 775d may have a length (y ₄₂ ) associated therewith, and the length (y ₄₂ ) may vary from about 1 mm to about 400 mm. The fourth plasma adjustment portion 770d and the fourth EM adjustment portion 775d may have a fourth height (x ₄ ) associated therewith, and the fourth height (x ₄ ) may vary from about 0.1 mm to about 10 mm. The fourth plasma adjustment portion 770d and the fourth EM adjustment portion 775d may have a fourth width (z ₄ ) associated therewith, and the fourth width (z ₄ ) may vary from about 0.1 mm to about 10 mm. The fourth temperature control loop 772d can be disposed within the fourth exemplary plasma adjustment rod (770d, 775d). For example, temperature control fluids and/or gases may flow through the fourth temperature control loop 772d to control the temperature of the fourth exemplary plasma conditioning rod (770d, 775d). Fourth temperature control circuit 772d may have associated therewith a fourth diameter (d _z4), and a fourth diameter (d _z4) may vary within about 0.001 mm to about 0.1 mm. Further, the fourth control circuit 772d has a fourth temperature shift (l _x41 and l _x42) associated therewith, and a fourth offset (l _x41 and l _x42) may vary from about 0.01 mm to about 0.1 mm.

圖8描述根據本發明實施例之例示操作程序的流程圖。圖8中顯示一例示多步驟程序800。Figure 8 depicts a flow chart illustrating an exemplary operational procedure in accordance with an embodiment of the present invention. An exemplary multi-step procedure 800 is shown in FIG.

在步驟810中，可將基板放置於製程腔室之中的基板固持器之上，且第一腔組件（圖1 168a）和第二腔組件（圖1 168b）可連結至該製程腔室。在一個實施例中，可將具有第一EM能量調整空間（圖1 169a）於其中的第一腔組件（圖1 168a），利用第一介面組件（圖1 112a）連結至第一製程腔室（圖1 110），並且可將具有第二EM能量調整空間（圖1 169b）於其中的第二腔組件（圖1 168b），利用第二介面組件（圖1 112b）連結至第一製程腔室（圖1 110）。In step 810, the substrate can be placed over the substrate holder in the processing chamber, and the first chamber assembly (Fig. 1 168a) and the second chamber assembly (Fig. 1 168b) can be coupled to the processing chamber. In one embodiment, a first chamber assembly (FIG. 1 168a) having a first EM energy adjustment space (FIG. 1 169a) can be coupled to the first process chamber using a first interface assembly (FIG. 1 112a) (Fig. 1 110), and a second chamber assembly (Fig. 1 168b) having a second EM energy adjustment space (Fig. 1 169b) can be coupled to the first process chamber using a second interface assembly (Fig. 1 112b) Room (Figure 1 110).

在步驟820中，可將第一組第一電漿調整桿﹛圖1 （170a-170e）及（175a-175e）﹜，配置成由第一腔組件（圖1 168a）經由第一介面組件（圖1 112a）進入在第一製程腔室（圖1 110）的製程空間（圖1 115）。第一組隔離組件（圖1 164a-164e）可被可移除自如地連結至第一介面組件（圖1 112a），且可建構成用以將第一製程腔室（圖1 110）中的製程空間（圖1 115）隔離於第一腔組件（圖1 168a）中的第一EM能量調整空間（圖1 169a）。第一組隔離組件（圖1 164a-164e）可用以將第一組電漿調整桿﹛圖1 （170a-170e）及（175a-175e）﹜可移除自如地連結至第一介面組件（圖1 112a）。舉例來說，第一電漿調整部（圖1 170a-170e）可配置於製程空間（圖1 115）之中，且第一EM調整部（圖1 175a-175e）可配置於第一EM能量調整空間（圖1 169a）之內。In step 820, the first set of first plasma adjustment rods {Fig. 1 (170a-170e) and (175a-175e)} can be configured to be passed by the first chamber assembly (Fig. 1 168a) via the first interface assembly ( Figure 1 112a) enters the process space in the first process chamber (Figure 1 110) (Figure 1 115). A first set of isolation components (Figs. 1 164a-164e) can be removably coupled to the first interface component (Fig. 1 112a) and can be configured to be used in the first process chamber (Fig. 1 110) The process space (Fig. 1 115) is isolated from the first EM energy adjustment space (Fig. 1 169a) in the first chamber assembly (Fig. 1 168a). The first set of isolation components (Figs. 1 164a-164e) can be used to removably couple the first set of plasma adjustment rods {Fig. 1 (170a-170e) and (175a-175e)} to the first interface assembly (Fig. 1 112a). For example, the first plasma adjustment portion (FIG. 1 170a-170e) may be disposed in the process space (FIG. 1 115), and the first EM adjustment portion (FIG. 1 175a-175e) may be configured on the first EM energy Adjust the space (Figure 1 169a).

在步驟830中，可將一組第二電漿調整桿﹛圖1 （170f-170j）及（175f-175j）﹜，配置成自第二腔組件（圖1 168b）通過第二介面組件（圖1 112b）進入第一製程腔室（圖1 110）之中的製程空間（圖1 115）。第二組隔離組件（圖1 164f-164j）可被可移除自如地連結至第二介面組件（圖1 112b），且可建構成用以將第一製程腔室（圖1 110）之中的製程空間（圖1 115）隔離於第二腔組件（圖1 168b）中的第二EM能量調整空間（圖1 169b）。第二組隔離組件（圖1 164f-164j）可用以將該組第二電漿調整桿﹛圖1 （170f-170j）及（175f-175j）﹜可移除自如地連結至第二介面組件（圖1 112b）。舉例來說，第二組電漿調整部（圖1 170f-170j）可配置於製程空間（圖1 115）之中，且第二EM調整部（圖1 175f-175j）可配置於第二EM能量調整空間（圖1 169b）之內。In step 830, a set of second plasma adjustment rods {Fig. 1 (170f-170j) and (175f-175j)} can be configured to pass through the second interface assembly from the second chamber assembly (Fig. 1 168b). 1 112b) Enter the process space in the first process chamber (Fig. 1 110) (Fig. 1 115). A second set of isolation components (Fig. 1 164f-164j) can be removably coupled to the second interface component (Fig. 1 112b) and can be constructed to be used in the first process chamber (Fig. 1 110) The process space (Fig. 1 115) is isolated from the second EM energy adjustment space in the second chamber assembly (Fig. 1 168b) (Fig. 1 169b). A second set of isolation components (Fig. 1 164f-164j) can be used to removably couple the set of second plasma adjustment rods {Fig. 1 (170f-170j) and (175f-175j)} to the second interface assembly (Fig. 1 (170f-170j) and (175f-175j)} Figure 1 112b). For example, the second set of plasma adjustment sections (FIG. 1 170f-170j) may be disposed in the process space (FIG. 1 115), and the second EM adjustment section (FIG. 1 175f-175j) may be configured on the second EM. The energy adjustment space (Figure 1 169b).

在步驟840中，於第一和第二電漿調整桿上方將製程氣體供給進入製程腔室。在乾式電漿蝕刻期間，製程氣體可包含蝕刻劑、鈍化劑、或惰性氣體、或其二者以上的組合。舉例而言，當電漿蝕刻例如矽氧化物（SiO_x ）或矽氮化物（Si_x N_y ）之介電膜時，電漿蝕刻氣體成份通常包含氟碳基化學品（C_x F_y ），例如C₄ F₈ 、C₅ F₈ 、C₃ F₆ 、C₄ F₆ 、CF₄ 等其中至少一者，且/或可包含氟烴基化學品（C_x H_y F_z ），例如CHF₃ 、CH₂ F₂ 等其中至少一者，且可具有惰性氣體、氧、CO、或CO₂ 其中至少一者。此外，舉例來說，當蝕刻多晶矽之時，電漿蝕刻氣體成份一般包含含鹵素氣體，例如HBr、Cl₂ 、NF₃ 、或SF₆ 、或其二者以上組合，且可包含氟烴基化學品（C_x H_y F_z ），例如CHF₃ 、CH₂ F₂ 等其中至少一者，及惰性氣體、氧、CO、或CO₂ 其中至少一者、或其二者以上。在電漿輔助沉積期間，製程氣體可包含膜形成前驅物、還原氣體、或惰性氣體、或其二者以上之組合。In step 840, process gas is supplied to the process chamber above the first and second plasma adjustment rods. During dry plasma etching, the process gas may comprise an etchant, a passivating agent, or an inert gas, or a combination of two or more thereof. For example, when a plasma etches a dielectric film such as tantalum oxide (SiO _x ) or tantalum nitride (Si _x N _y ), the plasma etching gas component usually contains a fluorocarbon-based chemical (C _x F _y ). For example, at least one of C ₄ F ₈ , C ₅ F ₈ , C ₃ F ₆ , C ₄ F ₆ , CF _{4 ,} etc., and/or may comprise a fluorocarbon based chemical (C _x H _y F _z ), such as CHF ₃ , at least one of CH ₂ F ₂ and the like, and may have at least one of an inert gas, oxygen, CO, or CO ₂ . Further, for example, when etching a polysilicon, the plasma etching gas component generally comprises a halogen-containing gas such as HBr, Cl ₂ , NF ₃ , or SF ₆ , or a combination of two or more thereof, and may include a fluorocarbon-based chemical. (C _x H _y F _z ), for example, at least one of CHF ₃ , CH ₂ F _{2 ,} and the like, and at least one of inert gas, oxygen, CO, or CO ₂ , or two or more thereof. During plasma assisted deposition, the process gas may comprise a film forming precursor, a reducing gas, or an inert gas, or a combination of two or more thereof.

在步驟850中，藉由將第一可調整微波訊號施加至第一電漿調整桿，以及將第二可調整微波訊號施加至第二電漿調整桿，可產生均勻的微波電漿，並且在該均勻的微波電漿之中處理基板。In step 850, by applying the first adjustable microwave signal to the first plasma adjustment rod and applying the second adjustable microwave signal to the second plasma adjustment rod, uniform microwave plasma can be generated, and The substrate is processed in the uniform microwave plasma.

在若干系統中，第一組EM耦合區域（圖1 162a-162e）可在建立於第一腔組件（圖1 168a）之中的第一EM能量調整空間（圖1 169a）之內，於由第一腔壁（圖1 165a）之第一EM耦合距離（圖1 176a-176e）處加以建立，且第一組EM調整部（圖1 175a-175e）可延伸進入第一組EM耦合區域（圖1 162a-162e）。第一EM調整部（圖1 175a-175e）可自第一組EM耦合區域（圖1 162a-162e）取得不同的可調整微波訊號（能量），且該不同的可調整微波訊號（能量）可利用第一組電漿調整部（圖1 170a-170e）於第一組位置（圖1 x_2a -x_2e ）傳送至製程空間（圖1 115）。第一組EM耦合區域（圖1 162a-162e）可包含可調整電場區域、可調整磁場區域、最大電場區域、最大磁場區域、最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。In several systems, the first set of EM coupling regions (Figs. 1 162a-162e) may be within the first EM energy conditioning space (Fig. 1 169a) established in the first chamber assembly (Fig. 1 168a). The first EM coupling distance (Fig. 1 176a-176e) of the first cavity wall (Fig. 1 165a) is established, and the first set of EM adjustments (Fig. 1 175a-175e) can extend into the first set of EM coupling regions ( Figure 1 162a-162e). The first EM adjustment unit (Fig. 1 175a-175e) can obtain different adjustable microwave signals (energy) from the first group of EM coupling regions (Fig. 1 162a-162e), and the different adjustable microwave signals (energy) can be The first set of plasma adjustments (Fig. 1 170a-170e) are used to transfer to the process space at the first set of positions (Fig. 1 x _{2a -} x _2e ) (Fig. 1 115). The first set of EM coupling regions (Fig. 1 162a-162e) may include an adjustable electric field region, an adjustable magnetic field region, a maximum electric field region, a maximum magnetic field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof .

第一組電漿調整板（圖1 161a-161e）可連結至第一組控制組件（圖1 160a-160e），其可用以在第一EM能量調整空間（圖1 169a）之內將該第一組電漿調整板（圖1 161a-161e）相對於第一組電漿調整桿﹛圖1 （170a-170e）及（175a-175e）﹜的第一組EM調整部（圖1 175a-175e）移動（圖1 163a-163e）一第一組EM調整距離（圖1 177a-177e）。該第一組控制組件（圖1 160a-160e）和該第一組電漿調整板（圖1 161a-161e）可用以將自第一組EM耦合區域（圖1 162a-162e）耦合至第一組電漿調整桿﹛圖1 （170a-170e）及（175a-175e）﹜的第一組EM調整部（圖1 175a-175e）之不同的可調整微波訊號（能量）予以調整/最佳化。舉例來說，第一組EM調整距離（圖1 177a-177e）可建立於第一EM能量調整空間（圖1 169a）內之第一組EM調整部（圖1 175a-175e）和第一組電漿調整板（圖1 161a-161e）之間，且第一組EM調整距離（圖1 177a-177e）可變化於約0.01 mm到約1 mm。一個以上控制器（圖1 195）可連結至第一組控制組件（圖1 160a-160e），且可用以控制/最佳化第一組電漿調整板（圖1 161a-161e）的移動（圖1 163a-163e）。舉例來說，一個以上控制器（圖1 195）可用以控制/最佳化第一組EM調整距離（圖1 177a-177e），以在基板處理期間於製程腔室（圖1 110）之中在製程空間（圖1 115）之內產生、最佳化、和/或維持均勻的微波電漿。The first set of plasma adjustment plates (Fig. 1 161a-161e) can be coupled to a first set of control components (Figs. 160a-160e) that can be used to make the first EM energy adjustment space (Fig. 1 169a) A set of plasma adjustment plates (Fig. 1 161a-161e) with respect to the first set of EM adjustments of the first set of plasma adjustment rods {Fig. 1 (170a-170e) and (175a-175e)} (Fig. 1 175a-175e) Moving (Fig. 1 163a-163e) a first set of EM adjustment distances (Fig. 1 177a-177e). The first set of control components (Figs. 1 160a-160e) and the first set of plasma conditioning plates (Figs. 1 161a-161e) can be used to couple the first set of EM coupling regions (Figs. 1 162a-162e) to the first Adjustment/optimization of different adjustable microwave signals (energy) of the first set of EM adjustment parts (Fig. 1 175a-175e) of the plasma adjustment rod {Fig. 1 (170a-170e) and (175a-175e)} . For example, the first set of EM adjustment distances (Fig. 1 177a-177e) can be established in the first EM energy adjustment space (Fig. 1 169a) in the first set of EM adjustments (Fig. 1 175a-175e) and the first set Between the plasma adjustment plates (Fig. 1 161a-161e), the first set of EM adjustment distances (Fig. 1 177a-177e) can vary from about 0.01 mm to about 1 mm. More than one controller (Fig. 1 195) can be coupled to the first set of control components (Figs. 1 160a-160e) and can be used to control/optimize the movement of the first set of plasma adjustment plates (Fig. 1 161a-161e) ( Figure 1 163a-163e). For example, more than one controller (Fig. 1 195) can be used to control/optimize the first set of EM adjustment distances (Fig. 1 177a-177e) for use in the process chamber (Fig. 1 110) during substrate processing. Uniform microwave plasma is generated, optimized, and/or maintained within the process space (Fig. 1 115).

此外，第二組EM耦合區域（圖1 162f-162j）可在建立於第二腔組件（圖1 168b）之中的第二EM能量調整空間（圖1 169b）之內，於由第一腔壁（圖1 165b）之第二組EM耦合距離（圖1 176f-176j）處加以建立，且第二組EM調整部（圖1 175f-175j）可延伸進入第二組EM耦合區域（圖1 162f-162j）。第二組EM調整部（圖1 175f-175j）可自第二組EM耦合區域（圖1 162f-162j）取得不同的可調整微波訊號（能量），且該不同的可調整微波訊號（能量）可利用第二組電漿調整部（圖1 170f-170j）於第二組位置（圖1 x_2f -x_2j ）傳送至製程空間（圖1 115）。第二組EM耦合區域（圖1 162f-162j）可包含可調整電場區域、可調整磁場區域、最大電場區域、最大磁場區域、最大電壓區域、最大能量區域、或最大電流區域、或其任何組合。In addition, the second set of EM coupling regions (Fig. 1 162f-162j) may be within the second EM energy adjustment space (Fig. 1 169b) established in the second chamber assembly (Fig. 1 168b), in the first chamber A second set of EM coupling distances (Fig. 1 176f-176j) of the wall (Fig. 1 165b) is established, and a second set of EM adjustments (Fig. 1 175f-175j) can be extended into the second set of EM coupling regions (Fig. 1 162f-162j). The second set of EM adjustment sections (Fig. 1 175f-175j) can obtain different adjustable microwave signals (energy) from the second set of EM coupling regions (Fig. 1 162f-162j), and the different adjustable microwave signals (energy) A second set of plasma adjustments (Fig. 1 170f-170j) can be used to transfer to the process space at a second set of positions (Fig. 1 x _{2f -} x _2j ) (Fig. 1 115). The second set of EM coupling regions (Fig. 1 162f-162j) may comprise an adjustable electric field region, an adjustable magnetic field region, a maximum electric field region, a maximum magnetic field region, a maximum voltage region, a maximum energy region, or a maximum current region, or any combination thereof .

第二組電漿調整板（圖1 161f-161j）可連結至第二組控制組件（圖1 160f-160j），其可用以在第二EM能量調整空間（圖1 169b）之內將該第二組電漿調整板（圖1 161f-161j）相對於第二組電漿調整桿﹛圖1 （170f-170j）及（175f-175j）﹜的第二組EM調整部（圖1 175f-175j）移動（圖1 163f-163j）一第二組EM調整距離（圖1 177f-177j）。該第二組控制組件（圖1 160f-160j）和該第二組電漿調整板（圖1 161f-161j）可用以將自第二組EM耦合區域（圖1 162f-162j）耦合至第二組電漿調整桿﹛圖1 （170f-170j）及（175f-175j）﹜的第二組EM調整部（圖1 175f-175j）之不同的可調整微波訊號（能量）予以調整/最佳化。舉例來說，第二組EM調整距離（圖1 177f-177j）可建立於第二EM能量調整空間（圖1 169b）內之第二組EM調整部（圖1 175f-175j）和第二組電漿調整板（圖1 161f-161j）之間，且第二組EM調整距離（圖1 177f-177j）可變化於約0.01 mm到約1 mm。一個以上控制器（圖1 195）可連結至第二組控制組件（圖1 160f-160j），且可用以控制/最佳化第二組電漿調整板（圖1 161f-161j）的第二組移動（圖1 163f-163j）。舉例來說，一個以上控制器（圖1 195）可用以控制/最佳化第二組EM調整距離（圖1 177f-177j），以在基板處理期間於製程腔室（圖1 110）之中在製程空間（圖1 115）之內產生、最佳化、和/或維持均勻的微波電漿。A second set of plasma adjustment plates (Fig. 1 161f-161j) can be coupled to a second set of control components (Fig. 1 160f-160j) that can be used to make the first EM energy adjustment space (Fig. 1 169b) Two sets of plasma adjustment plates (Fig. 1 161f-161j) with respect to the second set of EM adjustment parts of the second set of plasma adjustment rods {Fig. 1 (170f-170j) and (175f-175j)} (Fig. 1 175f-175j) Moving (Fig. 1 163f-163j) a second set of EM adjustment distances (Fig. 1 177f-177j). The second set of control components (Fig. 1 160f-160j) and the second set of plasma adjustment plates (Fig. 1 161f-161j) can be used to couple the second set of EM coupling regions (Fig. 1 162f-162j) to the second Adjustment/optimization of different adjustable microwave signals (energy) of the second set of EM adjustment parts (Fig. 1 175f-175j) of the plasma adjustment rod {Fig. 1 (170f-170j) and (175f-175j) . For example, the second set of EM adjustment distances (Fig. 1 177f-177j) can be established in the second set of EM adjustments (Fig. 1 175f-175j) and the second set in the second EM energy adjustment space (Fig. 1 169b) Between the plasma adjustment plates (Fig. 1 161f-161j), and the second set of EM adjustment distances (Fig. 1 177f-177j) can vary from about 0.01 mm to about 1 mm. More than one controller (Fig. 1 195) can be coupled to the second set of control components (Fig. 1 160f-160j) and can be used to control/optimize the second of the second set of plasma adjustment plates (Fig. 1 161f-161j) Group moves (Figure 1 163f-163j). For example, more than one controller (Fig. 1 195) can be used to control/optimize the second set of EM adjustment distances (Fig. 1 177f-177j) for use in the process chamber (Fig. 1 110) during substrate processing. Uniform microwave plasma is generated, optimized, and/or maintained within the process space (Fig. 1 115).

此外，一個以上控制器（圖1 195）可連結至EM來源（圖1 150a及150b）、匹配網路（圖1 152a及152b）、耦合網路（圖1 154a及154b）、及腔組件（圖1 168a及168b），並且至少一個控制器（圖1 195）可利用製程配方來建立、控制、及最佳化EM來源（圖1 150a及150b）、匹配網路（圖1 152a及152b）、耦合網路（圖1 154a及154b）、及腔組件（圖1 168a及168b），以控制在製程空間（圖1 115）之內的微波電漿均勻性。In addition, more than one controller (Figure 1 195) can be connected to the EM source (Figures 1 150a and 150b), the matching network (Figures 1 152a and 152b), the coupled network (Figures 1 154a and 154b), and the cavity assembly (Figure 1 195) Figure 1 168a and 168b), and at least one controller (Figure 1 195) can use process recipes to create, control, and optimize EM sources (Figures 1 150a and 150b), matching networks (Figures 1 152a and 152b) The coupling network (Fig. 1 154a and 154b) and the cavity assembly (Figs. 1 168a and 168b) are used to control the uniformity of the microwave plasma within the process space (Fig. 1 115).

圖9描述根據本發明實施例之電漿處理系統900。電漿處理系統900可包含乾式電漿蝕刻系統或電漿輔助沉積系統。FIG. 9 depicts a plasma processing system 900 in accordance with an embodiment of the present invention. The plasma processing system 900 can include a dry plasma etching system or a plasma assisted deposition system.

電漿處理系統900包含製程腔室910，製程腔室910具有複數腔室壁922和介面組件（922a及922b），其建構成用以界定一製程空間915。電漿處理系統900係建構成將基板905支撐於製程空間915之中。基板905在製程空間915之中暴露於電漿或製程化學品。電漿處理系統900可包含連結至介面組件（922a及922b）的複數腔組件（968a、968b、968c、968d、968e、及968f）。第一腔組件968a可連結至第一組電漿調整桿（911a和912a）；第二腔組件968b可連結至第二組電漿調整桿（911b和912b）；第三腔組件968c可連結至第三組電漿調整桿（911c和912c）；第四腔組件968d可連結至第四組電漿調整桿（911d和912d）；第五腔組件968e可連結至第五組電漿調整桿（911e和912e）；且第六腔組件968f可連結至第六組電漿調整桿（911f和912f）。可配置複數電漿調整桿（911a、912a、911b、912b、911c、912c、911d、912d、911e、912e、911f、及912f），以在製程空間915中形成電漿。舉例來說，腔組件（968a、968b、968c、968d、968e、及968f）和電漿調整桿（911a、912a、911b、912b、911c、912c、911d、912d、911e、912e、911f、及912f）可運用此處所述之微波系統（100、200、300、或400）加以配置。The plasma processing system 900 includes a process chamber 910 having a plurality of chamber walls 922 and interface assemblies (922a and 922b) configured to define a process space 915. The plasma processing system 900 is constructed to support the substrate 905 in the process space 915. Substrate 905 is exposed to plasma or process chemicals in process space 915. The plasma processing system 900 can include a plurality of chamber assemblies (968a, 968b, 968c, 968d, 968e, and 968f) coupled to the interface assemblies (922a and 922b). The first chamber assembly 968a can be coupled to the first set of plasma adjustment rods (911a and 912a); the second chamber assembly 968b can be coupled to the second set of plasma adjustment rods (911b and 912b); the third chamber assembly 968c can be coupled to a third set of plasma adjustment rods (911c and 912c); a fourth chamber assembly 968d can be coupled to the fourth set of plasma adjustment rods (911d and 912d); and a fifth chamber assembly 968e can be coupled to the fifth set of plasma adjustment rods ( 911e and 912e); and the sixth chamber assembly 968f can be coupled to the sixth set of plasma adjustment rods (911f and 912f). A plurality of plasma adjustment rods (911a, 912a, 911b, 912b, 911c, 912c, 911d, 912d, 911e, 912e, 911f, and 912f) may be configured to form a plasma in the process space 915. For example, cavity assemblies (968a, 968b, 968c, 968d, 968e, and 968f) and plasma adjustment rods (911a, 912a, 911b, 912b, 911c, 912c, 911d, 912d, 911e, 912e, 911f, and 912f) ) can be configured using the microwave system (100, 200, 300, or 400) described herein.

圖10A顯示在微波處理系統之中的製程腔室的替代實施例的局部切開俯視圖。在此實施例中，製程腔室係具有圓柱形側腔室壁1012的圓柱形腔室。如同先前實施例，設置具有第一EM能量調整空間1069a於其中的第一腔組件1068a，具有與腔室壁1012連結（例如透過一介面組件（未顯示））的腔壁1065a。一第一組隔離組件（1064a及1064b）被可移除自如地連結通過腔室壁1012，且用以將製程空間1015隔離於第一EM能量調整空間1069a。第一組隔離組件（1064a及1064b）係用以可移除自如地連結第一組電漿調整桿{（1070a及1070b）和（1075a及1075b）}，其中第一組電漿調整部（1070a及1070b）係配置在製程空間1015之中，且第一組EM調整部（1075a及1075b）係配置在第一EM能量調整空間1069a之內。類似地，亦顯示第二、第三、及第四腔組件（1068b、1068c、及1068d），其類似地具有其中的第二、第三、和第四EM能量調整空間（1069b、1069c、和1069d）、以及第二、第三、和第四組隔離組件（1064c及1064d）、（1064e及1064f）、和（1064g及1064h）、以及第二、第三、和第四組電漿調整桿{（1070c及1070d）和（1075c及1075d）}、{（1070e及1070f）和（1075e及1075f）}、和{（1070g及1070h）和（1075g及1075h）}。在圖10A中所描繪的具體細節，可與上述參照在處理系統100、200、300、及400之中類似元件所描述者具有相同或類似的特徵。然而，可了解的是，在一圓柱形腔室中，電漿調整部1070a-1070h延伸一電漿調整距離進入製程空間1015，在該等電漿調整部係以相同高度配置在腔室之中的情況下，該電漿調整距離係小於腔室的半徑。Figure 10A shows a partially cutaway top view of an alternate embodiment of a process chamber in a microwave processing system. In this embodiment, the process chamber has a cylindrical chamber with a cylindrical side chamber wall 1012. As with the previous embodiment, a first chamber assembly 1068a having a first EM energy adjustment space 1069a therein is provided having a chamber wall 1065a coupled to the chamber wall 1012 (e.g., through an interface assembly (not shown)). A first set of isolation assemblies (1064a and 1064b) are removably coupled through the chamber wall 1012 and are used to isolate the process space 1015 from the first EM energy adjustment space 1069a. The first set of isolation components (1064a and 1064b) are used to removably connect the first set of plasma adjustment rods {(1070a and 1070b) and (1075a and 1075b)}, wherein the first set of plasma adjustment parts (1070a) And 1070b) are disposed in the process space 1015, and the first group of EM adjustment sections (1075a and 1075b) are disposed within the first EM energy adjustment space 1069a. Similarly, second, third, and fourth cavity assemblies (1068b, 1068c, and 1068d) are also shown, which similarly have second, third, and fourth EM energy adjustment spaces therein (1069b, 1069c, and 1069d), and second, third, and fourth sets of isolation assemblies (1064c and 1064d), (1064e and 1064f), and (1064g and 1064h), and second, third, and fourth sets of plasma adjustment rods {(1070c and 1070d) and (1075c and 1075d)}, {(1070e and 1070f) and (1075e and 1075f)}, and {(1070g and 1070h) and (1075g and 1075h)}. The specific details depicted in FIG. 10A may have the same or similar features as those described above with reference to similar elements in processing systems 100, 200, 300, and 400. However, it can be understood that in a cylindrical chamber, the plasma adjusting portions 1070a-1070h extend a plasma adjustment distance into the process space 1015, and the plasma adjusting portions are disposed in the chamber at the same height. In the case of the plasma, the adjustment distance is smaller than the radius of the chamber.

類似地，如上所述，各腔組件1068a-1068d可包含與各自的EM調整部1075a-1075h相關聯的一EM耦合區域1062a-1062h、一電漿調整板1061a-1061h、及一控制組件1060a-1060h。此外，各腔組件1068a-1068d可包含腔控制組件及腔調整板，如以上對於處理系統100、200、300、及400所描述的。Similarly, as described above, each of the chamber assemblies 1068a-1068d can include an EM coupling region 1062a-1062h associated with a respective EM adjustment portion 1075a-1075h, a plasma adjustment plate 1061a-1061h, and a control assembly 1060a- 1060h. Additionally, each of the chamber assemblies 1068a-1068d can include a chamber control assembly and a chamber adjustment plate as described above for the processing systems 100, 200, 300, and 400.

如沿著圖10A的線段10B的圖10B的局部剖面圖所顯示，基板1005可配置在腔室的徑向中心處的基板固持器1020之上。基板固持器1020可為固定的，或者可在垂直或平移方向為可移動的。基板固持器1020亦可自腔室的徑向中心偏移，且為固定的或在任何所欲方向為可移動的。或者是，且如以下更詳細描述的，可將複數基板1005以間隔開的位置設置在一基板固持器1020之上，且該基板固持器1020可為固定的，或為可呈轉盤式（lazy Susan）轉動的，及/或可垂直移動的。As shown along a partial cross-sectional view of FIG. 10B of line segment 10B of FIG. 10A, substrate 1005 can be disposed over substrate holder 1020 at a radial center of the chamber. The substrate holder 1020 can be fixed or can be movable in a vertical or translational direction. The substrate holder 1020 can also be offset from the radial center of the chamber and be fixed or movable in any desired direction. Alternatively, and as described in greater detail below, the plurality of substrates 1005 can be disposed over a substrate holder 1020 in spaced apart positions, and the substrate holder 1020 can be stationary or can be in a turntable (lazy Susan) is rotated and/or vertically movable.

圖11A顯示微波處理系統1100之中的製程腔室1110的另一實施例的局部切開俯視圖。類似於圖10A的製程腔室，製程腔室1110係一圓柱形腔室。取代圍繞周邊配置的多個腔組件，處理系統1110可具有環狀腔組件1168，其形成一單一EM能量調整空間1169。複數隔離組件1164係圍繞腔室1110間隔配置，而電漿調整桿（1170和1175）與其連結，其中電漿調整部1170徑向延伸進入製程腔室1110且EM調整部1175延伸進入EM能量調整空間1169，如先前實施例所述。FIG. 11A shows a partial cutaway plan view of another embodiment of a process chamber 1110 in a microwave processing system 1100. Similar to the process chamber of FIG. 10A, the process chamber 1110 is a cylindrical chamber. Instead of a plurality of chamber assemblies disposed about the perimeter, the processing system 1110 can have an annular chamber assembly 1168 that forms a single EM energy adjustment space 1169. The plurality of isolation members 1164 are spaced apart around the chamber 1110, and the plasma adjustment rods (1170 and 1175) are coupled thereto, wherein the plasma adjustment portion 1170 extends radially into the process chamber 1110 and the EM adjustment portion 1175 extends into the EM energy adjustment space. 1169, as described in the previous embodiments.

各電漿調整桿（1170和1175）具有相關聯的電漿調整板1161及控制組件1160。如圖11B之中的局部剖面圖所顯示，取代水平定向的電漿調整板和控制組件，如假想圖所顯示，電漿調整板1161和控制組件1160可自腔組件的底部或自腔組件的頂部（未顯示）連結至腔組件1168。亦可將腔控制組件1145及腔調整板1146設置進腔組件1168。於是，微波能量可饋入單一環狀腔組件1168，例如通過選用性的角部1198。Each plasma adjustment rod (1170 and 1175) has an associated plasma adjustment plate 1161 and control assembly 1160. As shown in the partial cross-sectional view of FIG. 11B, instead of the horizontally oriented plasma conditioning plate and control assembly, as shown in the imaginary diagram, the plasma conditioning plate 1161 and control assembly 1160 can be from the bottom of the chamber assembly or from the chamber assembly. A top portion (not shown) is coupled to the cavity assembly 1168. Cavity control assembly 1145 and chamber adjustment plate 1146 can also be placed into chamber assembly 1168. The microwave energy can then be fed into a single annular cavity assembly 1168, such as by an optional corner 1198.

進一步參照圖11A，亦顯示一轉盤型基板固持器1120，其用於將複數基板1105支撐於其上，基板固持器1120可加以旋轉，以進一步確保電漿暴露的均勻性。基板固持器1120亦可為垂直可移動的（雖然由於基板固持器可為固定式，此特徵係一選用性特徵）。Referring further to Figure 11A, a turntable type substrate holder 1120 is also shown for supporting a plurality of substrates 1105 thereon, and the substrate holder 1120 can be rotated to further ensure uniformity of plasma exposure. The substrate holder 1120 can also be vertically movable (although this feature is an optional feature since the substrate holder can be stationary).

雖然以上僅詳細說明本發明的若干實施例，熟習此技藝者可輕易明白，在不實質偏離本發明的新穎教示和優點下，在實施例中許多修改是可能的。因此，所有此種修改應包含於本發明的範圍之內。While only a few embodiments of the present invention have been described in detail, it will be understood by those skilled in the art that many modifications are possible in the embodiments without departing from the novel teachings and advantages of the invention. Accordingly, all such modifications are intended to be included within the scope of the present invention.

因此，本發明說明並無意限定本發明，並且在理解實施例的修改和變化係可能的，而在此處所示詳細程度下，已描述本發明的構造、操作、和行為。因此，前述詳細發明說明沒有任何意圖限制本發明，而本發明的範圍係由隨附申請專利範圍加以界定。Therefore, the present invention is not intended to limit the invention, and the modifications and variations of the embodiments are possible, and the construction, operation, and behavior of the present invention have been described. Therefore, the foregoing detailed description of the invention is not intended to limit the invention, and the scope of the invention is defined by the scope of the accompanying claims.

100‧‧‧第一微波處理系統100‧‧‧First microwave processing system

105‧‧‧基板105‧‧‧Substrate

106‧‧‧電漿感測器106‧‧‧Plastic sensor

107‧‧‧製程感測器107‧‧‧Processing Sensor

108a、108b‧‧‧腔感測器108a, 108b‧‧‧ cavity sensor

110‧‧‧製程腔室110‧‧‧Processing chamber

112‧‧‧腔室壁112‧‧‧ chamber wall

112a‧‧‧第一介面組件112a‧‧‧First interface component

112b‧‧‧第二介面組件112b‧‧‧Second interface component

115‧‧‧製程空間115‧‧‧Process space

120‧‧‧基板固持器120‧‧‧Sheet holder

140‧‧‧氣體供給系統140‧‧‧ gas supply system

141‧‧‧氣體供給次組件141‧‧‧ gas supply subassembly

143‧‧‧氣體噴淋頭143‧‧‧ gas sprinkler

145a‧‧‧第一腔控制組件145a‧‧‧First Cavity Control Assembly

145b‧‧‧第二腔控制組件145b‧‧‧Second cavity control assembly

146a‧‧‧第一腔調整板146a‧‧‧First Cavity Adjustment Plate

146b‧‧‧第二腔調整板146b‧‧‧Second cavity adjustment plate

147a‧‧‧移動147a‧‧‧Mobile

147b‧‧‧移動147b‧‧‧Mobile

148a‧‧‧腔調整距離148a‧‧‧ cavity adjustment distance

148b‧‧‧第二腔調整距離148b‧‧‧Second cavity adjustment distance

150a‧‧‧第一EM來源150a‧‧‧First EM source

150b‧‧‧第二EM來源150b‧‧‧Second EM source

152a‧‧‧第一匹配網路152a‧‧‧First Matching Network

152b‧‧‧第二匹配網路152b‧‧‧Second Matching Network

154a‧‧‧第一耦合網路154a‧‧‧First coupled network

154b‧‧‧第二耦合網路154b‧‧‧Second coupled network

160a‧‧‧第一控制組件160a‧‧‧First control component

160b‧‧‧第二控制組件160b‧‧‧Second control component

160c‧‧‧第三控制組件160c‧‧‧ third control component

160d‧‧‧第四控制組件160d‧‧‧fourth control component

160e‧‧‧第五控制組件160e‧‧‧ fifth control component

160f‧‧‧第六控制組件160f‧‧‧ sixth control component

160g‧‧‧第七控制組件160g‧‧‧ seventh control unit

160h‧‧‧第八控制組件160h‧‧‧ eighth control component

160i‧‧‧第九控制組件160i‧‧‧ ninth control component

160j‧‧‧第十控制組件160j‧‧‧10th control component

161a‧‧‧第一電漿調整板161a‧‧‧First plasma adjustment board

161b‧‧‧第二電漿調整板161b‧‧‧Second plasma adjustment board

161c‧‧‧第三電漿調整板161c‧‧‧The third plasma adjustment board

161d‧‧‧第四電漿調整板161d‧‧‧4th plasma adjustment board

161e‧‧‧第五電漿調整板161e‧‧‧ fifth plasma adjustment board

161f‧‧‧第六電漿調整板161f‧‧‧ sixth plasma adjustment board

161g‧‧‧第七電漿調整板161g‧‧‧ seventh plasma adjustment board

161h‧‧‧第八電漿調整板161h‧‧‧ eighth plasma adjustment board

161i‧‧‧第九電漿調整板161i‧‧‧Ninth plasma adjustment board

161j‧‧‧第十電漿調整板161j‧‧‧10th plasma adjustment board

162a‧‧‧第一EM耦合區域162a‧‧‧First EM coupling area

162b‧‧‧第二EM耦合區域162b‧‧‧Second EM coupling area

162c‧‧‧第三EM耦合區域162c‧‧‧ Third EM coupling region

162d‧‧‧第四EM耦合區域162d‧‧‧4th EM coupling region

162e‧‧‧第五EM耦合區域162e‧‧‧ fifth EM coupling area

162f‧‧‧第六EM耦合區域162f‧‧‧6th EM coupling region

162g‧‧‧第七EM耦合區域162g‧‧‧ seventh EM coupling region

162h‧‧‧第八EM耦合區域162h‧‧‧8th EM coupling area

162i‧‧‧第九EM耦合區域162i‧‧‧ninth EM coupling region

162j‧‧‧第十EM耦合區域162j‧‧‧ tenth EM coupling region

163a‧‧‧移動163a‧‧‧Mobile

163b‧‧‧移動163b‧‧‧Mobile

163c‧‧‧移動163c‧‧‧Mobile

163d‧‧‧移動163d‧‧‧Mobile

163e‧‧‧移動163e‧‧‧Mobile

163f‧‧‧移動163f‧‧‧Mobile

163g‧‧‧移動163g‧‧‧Mobile

163h‧‧‧移動163h‧‧‧Mobile

163i‧‧‧移動163i‧‧‧Mobile

163j‧‧‧移動163j‧‧‧Mobile

164a、164b、164c、164d、164e‧‧‧隔離組件164a, 164b, 164c, 164d, 164e‧‧‧ isolation components

164f、164g、164h、164i、164j‧‧‧隔離組件164f, 164g, 164h, 164i, 164j‧‧‧ isolation components

165a‧‧‧第一腔壁165a‧‧‧First cavity wall

165b‧‧‧第一腔壁165b‧‧‧first cavity wall

166a‧‧‧第二腔壁166a‧‧‧Second cavity wall

166b‧‧‧第二腔壁166b‧‧‧Second cavity wall

167a‧‧‧第三腔壁167a‧‧‧ third cavity wall

167b‧‧‧第三腔壁167b‧‧‧ third cavity wall

168a‧‧‧第一腔組件168a‧‧‧First chamber assembly

168b‧‧‧第二腔組件168b‧‧‧Second chamber assembly

169a‧‧‧第一EM能量調整空間169a‧‧‧First EM energy adjustment space

169b‧‧‧第二EM能量調整空間169b‧‧‧Second EM energy adjustment space

170a、170b、170c、170d、170e‧‧‧(電漿調整桿)電漿調整部170a, 170b, 170c, 170d, 170e‧‧‧ (plasma adjustment rod) plasma adjustment department

170f、170g、170h、170i、170j‧‧‧(電漿調整桿)電漿調整部170f, 170g, 170h, 170i, 170j‧‧‧ (plasma adjustment rod) plasma adjustment department

171a‧‧‧第一電漿調整距離171a‧‧‧First plasma adjustment distance

171b‧‧‧第二電漿調整距離171b‧‧‧Second plasma adjustment distance

171c‧‧‧第三電漿調整距離171c‧‧‧The third plasma adjustment distance

171d‧‧‧第四電漿調整距離171d‧‧‧4th plasma adjustment distance

171e‧‧‧第五電漿調整距離171e‧‧‧ fifth plasma adjustment distance

171f‧‧‧第六電漿調整距離171f‧‧‧ sixth plasma adjustment distance

171g‧‧‧第七電漿調整距離171g‧‧‧ seventh plasma adjustment distance

171h‧‧‧第八電漿調整距離171h‧‧‧ eighth plasma adjustment distance

171i‧‧‧第九電漿調整距離171i‧‧‧Ninth plasma adjustment distance

171j‧‧‧第十電漿調整距離171j‧‧‧ Tenth plasma adjustment distance

175a、175b、175c、175d、175e‧‧‧(電漿調整桿)EM調整部175a, 175b, 175c, 175d, 175e‧‧‧ (plasma adjustment rod) EM adjustment department

175f、175g、175h、175i、175j‧‧‧(電漿調整桿)EM調整部175f, 175g, 175h, 175i, 175j‧‧‧ (plasma adjustment rod) EM adjustment department

176a‧‧‧第一EM耦合距離176a‧‧‧First EM coupling distance

176b‧‧‧第二EM耦合距離176b‧‧‧Second EM coupling distance

176c‧‧‧第三EM耦合距離176c‧‧‧ Third EM coupling distance

176d‧‧‧第四EM耦合距離176d‧‧‧4th EM coupling distance

176e‧‧‧第五EM耦合距離176e‧‧‧ fifth EM coupling distance

176f‧‧‧第六EM耦合距離176f‧‧‧6th EM coupling distance

176g‧‧‧第七EM耦合距離176g‧‧‧ seventh EM coupling distance

176h‧‧‧第八EM耦合距離176h‧‧‧8th EM coupling distance

176i‧‧‧第九EM耦合距離176i‧‧‧ninth EM coupling distance

176j‧‧‧第十EM耦合距離176j‧‧‧10th EM coupling distance

177a‧‧‧第一EM調整距離177a‧‧‧First EM adjustment distance

177b‧‧‧第二EM調整距離177b‧‧‧Second EM adjustment distance

177c‧‧‧第三EM調整距離177c‧‧‧ Third EM adjustment distance

177d‧‧‧第四EM調整距離177d‧‧‧Four EM adjustment distance

177e‧‧‧第五EM調整距離177e‧‧‧Fifth EM adjustment distance

177f‧‧‧第六EM調整距離177f‧‧‧ sixth EM adjustment distance

177g‧‧‧第七EM調整距離177g‧‧‧ seventh EM adjustment distance

177h‧‧‧第八EM調整距離177h‧‧‧8th EM adjustment distance

177i‧‧‧第九EM調整距離177i‧‧‧ ninth EM adjustment distance

177j‧‧‧第十EM調整距離177j‧‧‧10th EM adjustment distance

190‧‧‧壓力控制系統190‧‧‧ Pressure Control System

191‧‧‧埠191‧‧‧埠

195‧‧‧控制器195‧‧‧ Controller

196‧‧‧連結196‧‧‧ links

200‧‧‧第二微波處理系統200‧‧‧second microwave processing system

205‧‧‧基板205‧‧‧Substrate

206‧‧‧電漿感測器206‧‧‧Plastic sensor

207‧‧‧製程感測器207‧‧‧Processing Sensor

208a、208b‧‧‧腔感測器208a, 208b‧‧‧ cavity sensor

210‧‧‧製程腔室210‧‧‧Processing chamber

212‧‧‧腔室壁212‧‧‧ chamber wall

212a‧‧‧第一介面組件212a‧‧‧First interface component

212b‧‧‧第二介面組件212b‧‧‧Second interface component

215‧‧‧製程空間215‧‧‧Process space

220‧‧‧基板固持器220‧‧‧Sheet holder

240‧‧‧氣體供給系統240‧‧‧ gas supply system

241‧‧‧氣體供給次組件241‧‧‧ gas supply subassembly

243‧‧‧氣體噴淋頭243‧‧‧ gas sprinkler

245a‧‧‧第一腔控制組件245a‧‧‧First Cavity Control Assembly

245b‧‧‧第二腔控制組件245b‧‧‧Second cavity control assembly

246a‧‧‧第一腔調整板246a‧‧‧First Cavity Adjustment Plate

246b‧‧‧第二腔調整板246b‧‧‧Second cavity adjustment plate

247a‧‧‧移動247a‧‧‧Mobile

247b‧‧‧移動247b‧‧‧Mobile

248a‧‧‧腔調整距離248a‧‧‧ cavity adjustment distance

248b‧‧‧第二腔調整距離248b‧‧‧Second cavity adjustment distance

250a‧‧‧第一EM來源250a‧‧‧First EM source

250b‧‧‧第二EM來源250b‧‧‧Second EM source

252a‧‧‧第一匹配網路252a‧‧‧First Matching Network

252b‧‧‧第二匹配網路252b‧‧‧Second Matching Network

254a‧‧‧第一耦合網路254a‧‧‧First coupled network

254b‧‧‧第二耦合網路254b‧‧‧Second coupled network

260a‧‧‧第一控制組件260a‧‧‧First control component

260b‧‧‧第二控制組件260b‧‧‧second control component

260c‧‧‧第三控制組件260c‧‧‧ third control component

260d‧‧‧第四控制組件260d‧‧‧fourth control component

260e‧‧‧第五控制組件260e‧‧‧ fifth control component

260f‧‧‧第六控制組件260f‧‧‧ sixth control component

260g‧‧‧第七控制組件260g‧‧‧ seventh control unit

260h‧‧‧第八控制組件260h‧‧‧ eighth control component

261a‧‧‧第一電漿調整板261a‧‧‧First plasma adjustment board

261b‧‧‧第二電漿調整板261b‧‧‧Second plasma adjustment board

261c‧‧‧第三電漿調整板261c‧‧‧The third plasma adjustment board

261d‧‧‧第四電漿調整板261d‧‧‧4th plasma adjustment board

261e‧‧‧第五電漿調整板261e‧‧‧ fifth plasma adjustment board

261f‧‧‧第六電漿調整板261f‧‧‧ sixth plasma adjustment board

261g‧‧‧第七電漿調整板261g‧‧‧ seventh plasma adjustment board

261h‧‧‧第八電漿調整板261h‧‧‧ eighth plasma adjustment board

262a‧‧‧第一EM耦合區域262a‧‧‧First EM coupling region

262b‧‧‧第二EM耦合區域262b‧‧‧Second EM coupling area

262c‧‧‧第三EM耦合區域262c‧‧‧ Third EM coupling region

262d‧‧‧第四EM耦合區域262d‧‧‧4th EM coupling region

262e‧‧‧第五EM耦合區域262e‧‧‧ fifth EM coupling area

262f‧‧‧第六EM耦合區域262f‧‧‧6th EM coupling region

262g‧‧‧第七EM耦合區域262g‧‧‧ seventh EM coupling region

262h‧‧‧第八EM耦合區域262h‧‧‧8th EM coupling region

263a‧‧‧移動263a‧‧‧Mobile

263b‧‧‧移動263b‧‧‧Mobile

263c‧‧‧移動263c‧‧‧Mobile

263d‧‧‧移動263d‧‧‧Mobile

263e‧‧‧移動263e‧‧‧Mobile

263f‧‧‧移動263f‧‧‧Mobile

263g‧‧‧移動263g‧‧‧Mobile

263h‧‧‧移動263h‧‧‧Mobile

264a、264b、264c、264d‧‧‧隔離組件264a, 264b, 264c, 264d‧‧‧ isolation components

264e、264f、264g、264h‧‧‧隔離組件264e, 264f, 264g, 264h‧‧‧ isolation components

265a‧‧‧第一腔壁265a‧‧‧First cavity wall

265b‧‧‧第一腔壁265b‧‧‧First cavity wall

266a‧‧‧第二腔壁266a‧‧‧Second cavity wall

266b‧‧‧第二腔壁266b‧‧‧Second cavity wall

267a‧‧‧第三腔壁267a‧‧‧ third cavity wall

267b‧‧‧第三腔壁267b‧‧‧ third cavity wall

268a‧‧‧第一腔組件268a‧‧‧First chamber assembly

268b‧‧‧第二腔組件268b‧‧‧Second chamber assembly

269a‧‧‧第一EM能量調整空間269a‧‧‧First EM energy adjustment space

269b‧‧‧第二EM能量調整空間269b‧‧‧Second EM energy adjustment space

270a、270b、270c、270d‧‧‧(電漿調整桿)電漿調整部270a, 270b, 270c, 270d‧‧‧ (plasma adjustment rod) plasma adjustment department

270e、270f、270g、270h‧‧‧(電漿調整桿)電漿調整部270e, 270f, 270g, 270h‧‧‧ (plasma adjustment rod) plasma adjustment department

271a‧‧‧第一電漿調整距離271a‧‧‧First plasma adjustment distance

271b‧‧‧第二電漿調整距離271b‧‧‧Second plasma adjustment distance

271c‧‧‧第三電漿調整距離271c‧‧‧The third plasma adjustment distance

271d‧‧‧第四電漿調整距離271d‧‧‧4th plasma adjustment distance

271e‧‧‧第五電漿調整距離271e‧‧‧Film plasma adjustment distance

271f‧‧‧第六電漿調整距離271f‧‧‧ sixth plasma adjustment distance

271g‧‧‧第七電漿調整距離271g‧‧‧ seventh plasma adjustment distance

271h‧‧‧第八電漿調整距離271h‧‧‧ eighth plasma adjustment distance

275a、275b、275c、275d‧‧‧(電漿調整桿)EM調整部275a, 275b, 275c, 275d‧‧‧ (plasma adjustment rod) EM adjustment department

275e、275f、275g、275h‧‧‧(電漿調整桿)EM調整部275e, 275f, 275g, 275h‧‧‧ (plasma adjustment rod) EM adjustment department

276a‧‧‧第一EM耦合距離276a‧‧‧First EM coupling distance

276b‧‧‧第二EM耦合距離276b‧‧‧Second EM coupling distance

276c‧‧‧第三EM耦合距離276c‧‧‧ Third EM coupling distance

276d‧‧‧第四EM耦合距離276d‧‧‧4th EM coupling distance

276e‧‧‧第五EM耦合距離276e‧‧‧ fifth EM coupling distance

276f‧‧‧第六EM耦合距離276f‧‧‧6th EM coupling distance

276g‧‧‧第七EM耦合距離276g‧‧‧ seventh EM coupling distance

276h‧‧‧第八EM耦合距離276h‧‧‧8th EM coupling distance

277a‧‧‧第一EM調整距離277a‧‧‧First EM adjustment distance

277b‧‧‧第二EM調整距離277b‧‧‧Second EM adjustment distance

277c‧‧‧第三EM調整距離277c‧‧‧ third EM adjustment distance

277d‧‧‧第四EM調整距離277d‧‧‧Four EM adjustment distance

277e‧‧‧第五EM調整距離277e‧‧‧Fifth EM adjustment distance

277f‧‧‧第六EM調整距離277f‧‧‧ sixth EM adjustment distance

277g‧‧‧第七EM調整距離277g‧‧‧ seventh EM adjustment distance

277h‧‧‧第八EM調整距離277h‧‧‧8th EM adjustment distance

290‧‧‧壓力控制系統290‧‧‧ Pressure Control System

291‧‧‧埠291‧‧‧埠

295‧‧‧控制器295‧‧‧ Controller

296‧‧‧連結296‧‧‧ links

300‧‧‧第三微波處理系統300‧‧‧ Third microwave processing system

305‧‧‧基板305‧‧‧Substrate

306‧‧‧電漿感測器306‧‧‧Plastic sensor

307‧‧‧製程感測器307‧‧‧Processing Sensor

308a、308b‧‧‧腔感測器308a, 308b‧‧‧ cavity sensor

310‧‧‧第三製程腔室310‧‧‧ third process chamber

312‧‧‧腔室壁312‧‧‧ chamber wall

312a‧‧‧第一介面組件312a‧‧‧First interface component

312b‧‧‧第二介面組件312b‧‧‧Second interface component

315‧‧‧製程空間315‧‧‧Process space

320‧‧‧基板固持器320‧‧‧Sheet holder

340‧‧‧氣體供給系統340‧‧‧ gas supply system

341‧‧‧氣體供給次組件341‧‧‧ gas supply subassembly

343‧‧‧氣體噴淋頭343‧‧‧ gas sprinkler

345a‧‧‧第一腔控制組件345a‧‧‧First Cavity Control Assembly

345b‧‧‧第二腔控制組件345b‧‧‧Second cavity control assembly

346a‧‧‧第一腔調整板346a‧‧‧First Cavity Adjustment Plate

346b‧‧‧第二腔調整板346b‧‧‧Second cavity adjustment plate

347a‧‧‧移動347a‧‧‧Mobile

347b‧‧‧移動347b‧‧‧Mobile

348a‧‧‧腔調整距離348a‧‧‧ cavity adjustment distance

348b‧‧‧第二腔調整距離348b‧‧‧Second cavity adjustment distance

350a‧‧‧第一EM來源350a‧‧‧First EM source

350b‧‧‧第二EM來源350b‧‧‧Second EM source

352a‧‧‧第一匹配網路352a‧‧‧First Matching Network

352b‧‧‧第二匹配網路352b‧‧‧Second Matching Network

354a‧‧‧第一耦合網路354a‧‧‧First coupled network

354b‧‧‧第二耦合網路354b‧‧‧Second coupled network

360a‧‧‧第一控制組件360a‧‧‧First control component

360b‧‧‧第二控制組件360b‧‧‧second control component

360c‧‧‧第三控制組件360c‧‧‧ third control component

360d‧‧‧第四控制組件360d‧‧‧fourth control component

360e‧‧‧第五控制組件360e‧‧‧ fifth control component

360f‧‧‧第六控制組件360f‧‧‧ sixth control component

361a‧‧‧第一電漿調整板361a‧‧‧First plasma adjustment board

361b‧‧‧第二電漿調整板361b‧‧‧Second plasma adjustment board

361c‧‧‧第三電漿調整板361c‧‧‧The third plasma adjustment board

361d‧‧‧第四電漿調整板361d‧‧‧4th plasma adjustment board

361e‧‧‧第五電漿調整板361e‧‧‧ fifth plasma adjustment board

361f‧‧‧第六電漿調整板361f‧‧‧ sixth plasma adjustment board

362a‧‧‧第一EM耦合區域362a‧‧‧First EM coupling area

362b‧‧‧第二EM耦合區域362b‧‧‧Second EM coupling area

362c‧‧‧第三EM耦合區域362c‧‧‧ Third EM coupling region

362d‧‧‧第四EM耦合區域362d‧‧‧4th EM coupling region

362e‧‧‧第五EM耦合區域362e‧‧‧ fifth EM coupling area

362f‧‧‧第六EM耦合區域362f‧‧‧6th EM coupling region

363a‧‧‧移動363a‧‧‧Mobile

363b‧‧‧移動363b‧‧‧Mobile

363c‧‧‧移動363c‧‧‧Mobile

363d‧‧‧移動363d‧‧‧Mobile

363e‧‧‧移動363e‧‧‧Mobile

363f‧‧‧移動363f‧‧‧Mobile

364a、364b、364c‧‧‧隔離組件364a, 364b, 364c‧‧‧ isolation components

364d、364e、364f‧‧‧隔離組件364d, 364e, 364f‧‧‧ isolation components

365a‧‧‧第一腔壁365a‧‧‧First cavity wall

365b‧‧‧第一腔壁365b‧‧‧first cavity wall

366a‧‧‧第二腔壁366a‧‧‧Second cavity wall

366b‧‧‧第二腔壁366b‧‧‧Second cavity wall

367a‧‧‧第三腔壁367a‧‧‧ third cavity wall

367b‧‧‧第三腔壁367b‧‧‧ third cavity wall

368a‧‧‧第一腔組件368a‧‧‧First chamber assembly

368b‧‧‧第二腔組件368b‧‧‧Second chamber assembly

369a‧‧‧第一EM能量調整空間369a‧‧‧First EM energy adjustment space

369b‧‧‧第二EM能量調整空間369b‧‧‧Second EM energy adjustment space

370a、370b、370c‧‧‧(電漿調整桿)電漿調整部370a, 370b, 370c‧‧‧ (plasma adjustment rod) plasma adjustment department

370d、370e、370f‧‧‧(電漿調整桿)電漿調整部370d, 370e, 370f‧‧‧ (plasma adjustment rod) plasma adjustment department

371a‧‧‧第一電漿調整距離371a‧‧‧First plasma adjustment distance

371b‧‧‧第二電漿調整距離371b‧‧‧Second plasma adjustment distance

371c‧‧‧第三電漿調整距離371c‧‧‧The third plasma adjustment distance

371d‧‧‧第四電漿調整距離371d‧‧‧4th plasma adjustment distance

371e‧‧‧第五電漿調整距離371e‧‧‧Film plasma adjustment distance

371f‧‧‧第六電漿調整距離371f‧‧‧ sixth plasma adjustment distance

375a、375b、375c‧‧‧(電漿調整桿)EM調整部375a, 375b, 375c‧‧‧ (plasma adjustment rod) EM adjustment department

375d、375e、375f‧‧‧(電漿調整桿)EM調整部375d, 375e, 375f‧‧‧ (plasma adjustment rod) EM adjustment department

376a‧‧‧第一EM耦合距離376a‧‧‧First EM coupling distance

376b‧‧‧第二EM耦合距離376b‧‧‧Second EM coupling distance

376c‧‧‧第三EM耦合距離376c‧‧‧ Third EM coupling distance

376d‧‧‧第四EM耦合距離376d‧‧‧4th EM coupling distance

376e‧‧‧第五EM耦合距離376e‧‧‧ fifth EM coupling distance

376f‧‧‧第六EM耦合距離376f‧‧‧6th EM coupling distance

377a‧‧‧第一EM調整距離377a‧‧‧First EM adjustment distance

377b‧‧‧第二EM調整距離377b‧‧‧Second EM adjustment distance

377c‧‧‧第三EM調整距離377c‧‧‧ third EM adjustment distance

377d‧‧‧第四EM調整距離377d‧‧‧Four EM adjustment distance

377e‧‧‧第五EM調整距離377e‧‧‧Fifth EM adjustment distance

377f‧‧‧第六EM調整距離377f‧‧‧ sixth EM adjustment distance

390‧‧‧壓力控制系統390‧‧‧ Pressure Control System

391‧‧‧埠391‧‧‧埠

395‧‧‧控制器395‧‧‧ Controller

396‧‧‧連結396‧‧‧ links

400‧‧‧第四微波處理系統400‧‧‧fourth microwave processing system

405‧‧‧基板405‧‧‧Substrate

406‧‧‧電漿感測器406‧‧‧Plastic sensor

407‧‧‧製程感測器407‧‧‧Processing Sensor

408a、408b‧‧‧腔感測器408a, 408b‧‧‧ cavity sensor

410‧‧‧第四製程腔室410‧‧‧four-process chamber

412‧‧‧腔室壁412‧‧‧ chamber wall

412a‧‧‧第一介面組件412a‧‧‧First interface component

412b‧‧‧第二介面組件412b‧‧‧Second interface component

415‧‧‧製程空間415‧‧‧Process space

420‧‧‧基板固持器420‧‧‧Sheet holder

440‧‧‧氣體供給系統440‧‧‧ gas supply system

441‧‧‧氣體供給次組件441‧‧‧ gas supply subassembly

443‧‧‧氣體噴淋頭443‧‧‧ gas sprinkler

445a‧‧‧第一腔控制組件445a‧‧‧First Cavity Control Assembly

445b‧‧‧第二腔控制組件445b‧‧‧Second cavity control assembly

446a‧‧‧第一腔調整板446a‧‧‧First Cavity Adjustment Plate

446b‧‧‧第二腔調整板446b‧‧‧Second cavity adjustment plate

447a‧‧‧移動447a‧‧‧Mobile

447b‧‧‧移動447b‧‧‧Mobile

448a‧‧‧第四腔調整距離448a‧‧‧4th cavity adjustment distance

448b‧‧‧第二腔調整距離448b‧‧‧Second cavity adjustment distance

450a‧‧‧第一EM來源450a‧‧‧First EM source

450b‧‧‧第二EM來源450b‧‧‧Second EM source

452a‧‧‧第一匹配網路452a‧‧‧First Matching Network

452b‧‧‧第二匹配網路452b‧‧‧Second Matching Network

454a‧‧‧第一耦合網路454a‧‧‧First coupled network

454b‧‧‧第二耦合網路454b‧‧‧Second coupled network

460a‧‧‧第一控制組件460a‧‧‧First control component

460b‧‧‧第二控制組件460b‧‧‧second control component

460c‧‧‧第三控制組件460c‧‧‧ third control component

460d‧‧‧第四控制組件460d‧‧‧fourth control component

461a‧‧‧第一電漿調整板461a‧‧‧First plasma adjustment board

461b‧‧‧第二電漿調整板461b‧‧‧Second plasma adjustment board

461c‧‧‧第三電漿調整板461c‧‧‧The third plasma adjustment board

461d‧‧‧第四電漿調整板461d‧‧‧4th plasma adjustment board

462a‧‧‧第一EM耦合區域462a‧‧‧First EM coupling area

462b‧‧‧第二EM耦合區域462b‧‧‧Second EM coupling region

462c‧‧‧第三EM耦合區域462c‧‧‧ Third EM coupling region

462d‧‧‧第四EM耦合區域462d‧‧‧fourth EM coupling region

463a‧‧‧移動463a‧‧‧Mobile

463b‧‧‧移動463b‧‧‧Mobile

463c‧‧‧移動463c‧‧‧Mobile

463d‧‧‧移動463d‧‧‧Mobile

464a、464b‧‧‧隔離組件464a, 464b‧‧‧Isolation components

464c、464d‧‧‧隔離組件464c, 464d‧‧‧ isolation components

465a‧‧‧第一腔壁465a‧‧‧First cavity wall

465b‧‧‧第一腔壁465b‧‧‧First cavity wall

466a‧‧‧第二腔壁466a‧‧‧Second cavity wall

466b‧‧‧第二腔壁466b‧‧‧Second cavity wall

467a‧‧‧第三腔壁467a‧‧‧ third cavity wall

467b‧‧‧第三腔壁467b‧‧‧ third cavity wall

468a‧‧‧第一腔組件468a‧‧‧First chamber assembly

468b‧‧‧第二腔組件468b‧‧‧Second chamber assembly

469a‧‧‧第一EM能量調整空間469a‧‧‧First EM energy adjustment space

469b‧‧‧第二EM能量調整空間469b‧‧‧Second EM energy adjustment space

470a、470b‧‧‧(電漿調整桿)電漿調整部470a, 470b‧‧‧ (plasma adjustment rod) plasma adjustment department

470c、470d‧‧‧(電漿調整桿)電漿調整部470c, 470d‧‧‧ (plasma adjustment rod) plasma adjustment department

471a‧‧‧第一電漿調整距離471a‧‧‧First plasma adjustment distance

471b‧‧‧第二電漿調整距離471b‧‧‧Second plasma adjustment distance

471c‧‧‧第三電漿調整距離471c‧‧‧The third plasma adjustment distance

471d‧‧‧第四電漿調整距離471d‧‧‧4th plasma adjustment distance

475a、475b‧‧‧(電漿調整桿)EM調整部475a, 475b‧‧‧ (plasma adjustment rod) EM adjustment department

475c、475d‧‧‧(電漿調整桿)EM調整部475c, 475d‧‧‧ (plasma adjustment rod) EM adjustment department

476a‧‧‧第一EM耦合距離476a‧‧‧First EM coupling distance

476b‧‧‧第二EM耦合距離476b‧‧‧Second EM coupling distance

476c‧‧‧第三EM耦合距離476c‧‧‧ Third EM coupling distance

476d‧‧‧第四EM耦合距離476d‧‧‧4th EM coupling distance

477a‧‧‧第一EM調整距離477a‧‧‧First EM adjustment distance

477b‧‧‧第二EM調整距離477b‧‧‧Second EM adjustment distance

477c‧‧‧第三EM調整距離477c‧‧‧ Third EM adjustment distance

477d‧‧‧第四EM調整距離477d‧‧‧Four EM adjustment distance

490‧‧‧壓力控制系統490‧‧‧ Pressure Control System

491‧‧‧埠491‧‧‧埠

495‧‧‧控制器495‧‧‧ Controller

496‧‧‧連結496‧‧‧ links

570a‧‧‧(電漿調整桿)電漿調整部570a‧‧‧ (plasma adjustment rod) plasma adjustment department

575a‧‧‧(電漿調整桿)EM調整部575a‧‧‧ (plasma adjustment rod) EM adjustment department

570b‧‧‧(電漿調整桿)電漿調整部570b‧‧‧(plasma adjustment rod) plasma adjustment department

575b‧‧‧(電漿調整桿)EM調整部575b‧‧‧ (plasma adjustment rod) EM adjustment department

570c‧‧‧(電漿調整桿)電漿調整部570c‧‧‧ (plasma adjustment rod) plasma adjustment department

575c‧‧‧(電漿調整桿)EM調整部575c‧‧‧ (plasma adjustment rod) EM adjustment department

570d‧‧‧(電漿調整桿)電漿調整部570d‧‧‧(plasma adjustment rod) plasma adjustment department

575d‧‧‧(電漿調整桿)EM調整部575d‧‧‧ (plasma adjustment rod) EM adjustment department

670a‧‧‧(電漿調整桿)電漿調整部670a‧‧‧(plasma adjustment rod) plasma adjustment department

675a‧‧‧(電漿調整桿)EM調整部675a‧‧‧(plasma adjustment rod) EM adjustment department

670b‧‧‧(電漿調整桿)電漿調整部670b‧‧‧ (plasma adjustment rod) plasma adjustment department

675b‧‧‧(電漿調整桿)EM調整部675b‧‧‧ (plasma adjustment rod) EM adjustment department

670c‧‧‧(電漿調整桿)電漿調整部670c‧‧‧ (plasma adjustment rod) plasma adjustment department

675c‧‧‧(電漿調整桿)EM調整部675c‧‧‧(plasma adjustment rod) EM adjustment department

670d‧‧‧(電漿調整桿)電漿調整部670d‧‧‧(plasma adjustment rod) plasma adjustment department

675d‧‧‧(電漿調整桿)EM調整部675d‧‧‧(plasma adjustment rod) EM adjustment department

770a‧‧‧(電漿調整桿)電漿調整部770a‧‧‧ (plasma adjustment rod) plasma adjustment department

775a‧‧‧(電漿調整桿)EM調整部775a‧‧‧ (plasma adjustment rod) EM adjustment department

770b‧‧‧(電漿調整桿)電漿調整部770b‧‧‧ (plasma adjustment rod) plasma adjustment department

775b‧‧‧(電漿調整桿)EM調整部775b‧‧‧ (plasma adjustment rod) EM adjustment department

770c‧‧‧(電漿調整桿)電漿調整部770c‧‧‧ (plasma adjustment rod) plasma adjustment department

775c‧‧‧(電漿調整桿)EM調整部775c‧‧‧ (plasma adjustment rod) EM adjustment department

770d‧‧‧(電漿調整桿)電漿調整部770d‧‧‧(plasma adjustment rod) plasma adjustment department

775d‧‧‧(電漿調整桿)EM調整部775d‧‧‧ (plasma adjustment rod) EM adjustment department

772a‧‧‧溫度控制迴路772a‧‧‧temperature control loop

772b‧‧‧溫度控制迴路772b‧‧‧temperature control loop

772c‧‧‧溫度控制迴路772c‧‧‧temperature control loop

772d‧‧‧溫度控制迴路772d‧‧‧temperature control loop

800‧‧‧程序800‧‧‧ procedures

810‧‧‧步驟810‧‧‧Steps

820‧‧‧步驟820‧‧‧Steps

830‧‧‧步驟830‧‧ steps

840‧‧‧步驟840‧‧‧Steps

850‧‧‧步驟850 ‧ ‧ steps

860‧‧‧步驟860‧‧‧Steps

900‧‧‧電漿處理系統900‧‧‧Plastic Processing System

905‧‧‧基板905‧‧‧Substrate

910‧‧‧製程腔室910‧‧‧Processing chamber

911a、912a‧‧‧電漿調整桿911a, 912a‧‧‧ plasma adjustment rod

911b、912b‧‧‧電漿調整桿911b, 912b‧‧‧ plasma adjustment rod

911c、912c‧‧‧電漿調整桿911c, 912c‧‧‧ plasma adjustment rod

911d、912d‧‧‧電漿調整桿911d, 912d‧‧‧ plasma adjustment rod

911e、912e‧‧‧電漿調整桿911e, 912e‧‧‧ plasma adjustment rod

911f、912f‧‧‧電漿調整桿911f, 912f‧‧‧ plasma adjustment rod

915‧‧‧製程空間915‧‧‧Process space

922‧‧‧腔室壁922‧‧‧ chamber wall

922a、922b‧‧‧介面組件922a, 922b‧‧ interface components

968a、968b、968c、968d、968e、968f‧‧‧腔組件968a, 968b, 968c, 968d, 968e, 968f‧‧‧ cavity components

1005‧‧‧基板1005‧‧‧Substrate

1012‧‧‧腔室壁1012‧‧‧ chamber wall

1015‧‧‧製程空間1015‧‧‧Process space

1020‧‧‧基板固持器1020‧‧‧Sheet holder

1060a-1060h‧‧‧控制組件1060a-1060h‧‧‧Control components

1061a-1061h‧‧‧電漿調整板1061a-1061h‧‧‧Plastic adjustment board

1062a-1062h‧‧‧EM耦合區域1062a-1062h‧‧‧EM coupling area

1064a、1064b‧‧‧隔離組件1064a, 1064b‧‧‧Isolation components

1064c、1064d‧‧‧隔離組件1064c, 1064d‧‧‧ isolation components

1064f、1064f‧‧‧隔離組件1064f, 1064f‧‧‧Isolation components

1064g、1064h‧‧‧隔離組件1064g, 1064h‧‧‧ isolation components

1065a‧‧‧腔壁1065a‧‧‧ cavity wall

1068a‧‧‧第一腔組件1068a‧‧‧First chamber assembly

1068b‧‧‧第二腔組件1068b‧‧‧Second chamber assembly

1068c‧‧‧第三腔組件1068c‧‧‧ third chamber assembly

1068d‧‧‧第四腔組件1068d‧‧‧4th chamber assembly

1069a‧‧‧第一EM能量調整空間1069a‧‧‧First EM energy adjustment space

1069a‧‧‧第二EM能量調整空間1069a‧‧‧Second EM energy adjustment space

1069a‧‧‧第三EM能量調整空間1069a‧‧‧ Third EM energy adjustment space

1069a‧‧‧第四EM能量調整空間1069a‧‧‧Four EM energy adjustment space

1070a、1070b‧‧‧(電漿調整桿)電漿調整部1070a, 1070b‧‧‧ (plasma adjustment rod) plasma adjustment department

1070c、1070d‧‧‧(電漿調整桿)電漿調整部1070c, 1070d‧‧‧ (plasma adjustment rod) plasma adjustment department

1070e、1070f‧‧‧(電漿調整桿)電漿調整部1070e, 1070f‧‧‧ (plasma adjustment rod) plasma adjustment department

1070g、1070h‧‧‧(電漿調整桿)電漿調整部1070g, 1070h‧‧‧ (plasma adjustment rod) plasma adjustment department

1075a、1075b‧‧‧(電漿調整桿)EM調整部1075a, 1075b‧‧‧ (plasma adjustment rod) EM adjustment department

1075c、1075d‧‧‧(電漿調整桿)EM調整部1075c, 1075d‧‧‧ (plasma adjustment rod) EM adjustment department

1075e、1075f‧‧‧(電漿調整桿)EM調整部1075e, 1075f‧‧‧ (plasma adjustment rod) EM adjustment department

1075g、1075h‧‧‧(電漿調整桿)EM調整部1075g, 1075h‧‧‧ (plasma adjustment rod) EM adjustment department

1100‧‧‧微波處理系統1100‧‧‧Microwave Processing System

1105‧‧‧基板1105‧‧‧Substrate

1110‧‧‧製程腔室1110‧‧‧Processing chamber

1120‧‧‧基板固持器1120‧‧‧Sheet holder

1145‧‧‧腔控制組件1145‧‧‧ cavity control components

1146‧‧‧腔調整板1146‧‧‧ cavity adjustment plate

1160‧‧‧控制組件1160‧‧‧Control components

1161‧‧‧電漿調整板1161‧‧‧Plastic adjustment board

1168‧‧‧腔組件1168‧‧‧ cavity components

1169‧‧‧EM能量調整空間1169‧‧‧EM energy adjustment space

1170‧‧‧(電漿調整桿)電漿調整部1170‧‧‧(plasma adjustment rod) plasma adjustment department

1175‧‧‧(電漿調整桿)EM調整部1175‧‧‧ (plasma adjustment rod) EM adjustment department

1198‧‧‧角部1198‧‧‧ corner

以例示為目的，現在將參照隨附示意圖式，描述本發明的實施例，其中相同的參考符號表示相同的部件，且其中：The embodiments of the present invention will now be described with reference to the accompanying drawings, in which

圖1A-1C描述根據本發明實施例之第一微波處理系統的不同例示視圖；1A-1C depict different illustrative views of a first microwave processing system in accordance with an embodiment of the present invention;

圖2A-2C描述根據本發明實施例之第二微波處理系統的不同例示視圖；2A-2C depict different illustrative views of a second microwave processing system in accordance with an embodiment of the present invention;

圖3A-3C描述根據本發明實施例之第三微波處理系統的不同例示視圖；3A-3C depict different illustrative views of a third microwave processing system in accordance with an embodiment of the present invention;

圖4A-4C描述根據本發明實施例之第四微波處理系統的不同例示視圖；4A-4C depict different illustrative views of a fourth microwave processing system in accordance with an embodiment of the present invention;

圖5A-5D顯示根據本發明實施例之例示電漿調整桿的不同視圖；5A-5D show different views of an exemplary plasma adjustment rod in accordance with an embodiment of the present invention;

圖6A-6D顯示根據本發明實施例之其他例示電漿調整桿的不同視圖；6A-6D show different views of other exemplary plasma adjustment rods in accordance with an embodiment of the present invention;

圖7A-7D顯示根據本發明實施例之例示電漿調整桿的不同視圖；7A-7D show different views of an exemplary plasma adjustment rod in accordance with an embodiment of the present invention;

圖8描述根據本發明實施例之例示操作程序的流程圖；及Figure 8 depicts a flow chart illustrating an exemplary operational procedure in accordance with an embodiment of the present invention;

圖9描述根據本發明實施例之電漿處理系統。納入且構成此說明書一部分的隨附圖式，與上述發明總體說明及以下的詳細說明一起描述本發明的實施例，用以闡明本發明。Figure 9 depicts a plasma processing system in accordance with an embodiment of the present invention. The embodiments of the present invention are described with reference to the embodiments of the invention and

圖10A-10B顯示微波處理系統的替代實施例的不同視圖。10A-10B show different views of an alternate embodiment of a microwave processing system.

圖11A-11B顯示微波處理系統的另一替代實施例的不同視圖。11A-11B show different views of another alternate embodiment of a microwave processing system.

1100‧‧‧微波處理系統1100‧‧‧Microwave Processing System

1105‧‧‧基板1105‧‧‧Substrate

1110‧‧‧製程腔室1110‧‧‧Processing chamber

1120‧‧‧基板固持器1120‧‧‧Sheet holder

1145‧‧‧腔控制組件1145‧‧‧ cavity control components

1146‧‧‧腔調整板1146‧‧‧ cavity adjustment plate

1160‧‧‧控制組件1160‧‧‧Control components

1161‧‧‧電漿調整板1161‧‧‧Plastic adjustment board

1168‧‧‧腔組件1168‧‧‧ cavity components

1169‧‧‧EM能量調整空間1169‧‧‧EM energy adjustment space

1170‧‧‧(電漿調整桿)電漿調整部1170‧‧‧(plasma adjustment rod) plasma adjustment department

1175‧‧‧(電漿調整桿)EM調整部1175‧‧‧ (plasma adjustment rod) EM adjustment department

1198‧‧‧角部1198‧‧‧ corner

Claims (20)

一種微波處理系統，用於處理基板，該微波處理系統包含： 　　一製程腔室，包含一製程空間，用於處理其中的一基板； 　　一個以上腔組件，連結至該製程腔室的一側腔室壁，該等腔組件每一者具有一電磁（EM）能量調整空間於其中； 　　一組EM耦合區域，建立在該等EM能量調整空間之中；及一組隔離組件，連結至該側腔室壁，且用以將該等EM能量調整空間隔離於該製程空間； 　　一組電漿調整桿，與該組隔離組件連結，該組電漿調整桿具有一組電漿調整部及一組EM調整部，該組電漿調整部係建構在該製程空間之中，該組EM調整部係建構在該等EM能量調整空間之中且連結至該組EM耦合區域其中至少一者；及 　　一控制器，連結至該一個以上腔組件，其中該控制器係用以控制在該等EM能量調整空間之中的該組EM耦合區域，藉此控制在該製程空間之中的電漿均勻性。A microwave processing system for processing a substrate, the microwave processing system comprising: a processing chamber including a process space for processing one of the substrates; and one or more chamber components coupled to one side of the processing chamber a wall, each of the cavity components having an electromagnetic (EM) energy adjustment space therein; a set of EM coupling regions established in the EM energy adjustment spaces; and a set of isolation components coupled to the side chambers a wall for isolating the EM energy adjustment space from the process space; a set of plasma adjustment rods coupled to the set of isolation assemblies, the set of plasma adjustment rods having a set of plasma adjustments and a set of EM adjustments The plasma adjustment unit is constructed in the process space, and the set of EM adjustment units are constructed in the EM energy adjustment space and coupled to at least one of the set of EM coupling regions; and a controller Linking to the one or more chamber components, wherein the controller is configured to control the set of EM coupling regions in the EM energy adjustment spaces, thereby controlling the process space Plasma uniformity. 如申請專利範圍第1項的微波處理系統，更包含： 　　一個以上耦合網路，連結至該一個以上腔組件； 　　一匹配網路，連接至該一個以上耦合網路每一者；及 　　一EM來源，連接至該匹配網路，其中該EM來源係建構成操作於自500 MHz至5000 MHz的頻率範圍；其中該控制器係連結至該EM來源且用以控制該EM來源，藉此控制在該製程空間之中的電漿均勻性。The microwave processing system of claim 1, further comprising: one or more coupling networks connected to the one or more cavity components; a matching network connected to each of the one or more coupling networks; and an EM source Connecting to the matching network, wherein the EM source system is configured to operate in a frequency range from 500 MHz to 5000 MHz; wherein the controller is coupled to the EM source and used to control the EM source, thereby controlling Plasma uniformity in the process space. 如申請專利範圍第1項的微波處理系統，更包含： 　　一組電漿調整板，配置在該等EM能量調整空間之中鄰近該組EM耦合區域；及 　　一組控制組件，通過一腔組件壁而連結至該組電漿調整板，該等電漿調整板每一者藉由該等控制組件其中各自的一者定位成距離該等EM調整部其中各自的一者一EM耦合距離；其中該控制器係連結至該組控制組件且用以控制該等EM耦合距離，藉此控制在該製程空間之中的電漿均勻性。The microwave processing system of claim 1, further comprising: a set of plasma adjustment plates disposed adjacent to the set of EM coupling regions in the EM energy adjustment spaces; and a set of control components passing through a cavity assembly wall And connected to the set of plasma adjustment plates, each of the plasma adjustment plates being positioned by the respective one of the control components to be separated from each of the EM adjustment portions by an EM coupling distance; wherein A controller is coupled to the set of control components and is configured to control the EM coupling distances thereby controlling plasma uniformity in the process space. 如申請專利範圍第1項的微波處理系統，其中該組電漿調整桿、及該一個以上腔組件包含介電材料。The microwave processing system of claim 1, wherein the set of plasma adjustment rods, and the one or more chamber assemblies comprise a dielectric material. 如申請專利範圍第1項的微波處理系統，更包含： 　　一氣體噴淋頭，連結至該製程腔室； 　　一氣體供給次組件，連結至該氣體噴淋頭；及 　　一氣體供給系統，連結至該氣體供給次組件，其中該氣體噴淋頭係用以將製程氣體引入該製程空間，其中該控制器係連結至該氣體供給系統、該氣體供給次組件、及該氣體噴淋頭且用以控制該氣體供給系統、該氣體供給次組件、及該氣體噴淋頭，藉此控制在該製程空間之中的電漿均勻性。The microwave processing system of claim 1, further comprising: a gas shower head coupled to the process chamber; a gas supply subassembly coupled to the gas shower head; and a gas supply system coupled to The gas is supplied to the subassembly, wherein the gas shower head is used to introduce a process gas into the process space, wherein the controller is coupled to the gas supply system, the gas supply subassembly, and the gas shower head and The gas supply system, the gas supply subassembly, and the gas shower head are controlled to thereby control plasma uniformity in the process space. 如申請專利範圍第5項的微波處理系統，其中該製程氣體包含C₄ F₈ 、C₅ F₈ 、C₃ F₆ 、C₄ F₆ 、CF₄ 、CHF₃ 、CH₂ F₂ 、惰性氣體、氧、CO、及CO₂ 其中二者以上。The microwave processing system of claim 5, wherein the process gas comprises C ₄ F ₈ , C ₅ F ₈ , C ₃ F ₆ , C ₄ F ₆ , CF ₄ , CHF ₃ , CH ₂ F ₂ , an inert gas , oxygen, CO, and CO ₂ of two or more. 如申請專利範圍第5項的微波處理系統，其中該製程氣體包含HBr、Cl₂ 、NF₃ 、SF₆ 、CHF₃ 、CH₂ F₂ 、惰性氣體、氧、CO、及CO₂ 其中二者以上。The microwave processing system of claim 5, wherein the process gas comprises HBr, Cl ₂ , NF ₃ , SF ₆ , CHF ₃ , CH ₂ F ₂ , inert gas, oxygen, CO, and CO _{2 .} . 如申請專利範圍第1項的微波處理系統，更包含： 　　建構在該一個以上腔組件的各個EM能量調整空間之中的一腔調整板；及 　　連結至各腔調整板的一腔控制組件，其中該腔調整板係定位成距離該腔組件的一壁一腔調整距離，其中該控制器係連結至該腔控制組件且用以控制該腔調整距離，藉此控制在該製程空間之中的電漿均勻性。The microwave processing system of claim 1, further comprising: a cavity adjustment plate constructed in each of the EM energy adjustment spaces of the one or more cavity components; and a cavity control component coupled to each cavity adjustment plate, wherein The cavity adjustment plate is positioned to adjust a distance from a wall of the cavity assembly, wherein the controller is coupled to the cavity control component and configured to control the cavity to adjust the distance, thereby controlling the electricity in the process space. Slurry uniformity. 如申請專利範圍第8項的微波處理系統，其中該腔調整板及該腔控制組件包含介電材料。The microwave processing system of claim 8 wherein the cavity adjustment plate and the cavity control assembly comprise a dielectric material. 一種微波處理系統，用於處理基板，該微波處理系統包含 　　一製程腔室，包含一製程空間，用於處理其中的一基板； 　　一第一腔組件，利用一第一介面組件連結至該製程腔室，該第一腔組件具有一第一電磁（EM）能量調整空間於其中，該第一介面組件包含一第一隔離組件，其中一第一對EM耦合區域係建立在該第一EM能量調整空間之中； 　　一第一對電漿調整桿，連結至該第一隔離組件，該第一對電漿調整桿具有配置於該製程空間之中的多個電漿調整部，且具有配置於該第一EM能量調整空間之中的多個EM調整部，其中一第一EM調整部係連結至一第一EM耦合區域，且一第二EM調整部係連結至一第二EM耦合區域； 　　一第二腔組件，利用一第二介面組件連結至該製程腔室，該第二腔組件具有一第二EM能量調整空間於其中，該第二介面組件包含一第二隔離組件，其中一第二對EM耦合區域係建立在該第二EM能量調整空間之中； 　　一第二對電漿調整桿，連結至該第二隔離組件，該第二對電漿調整桿具有配置於該製程空間之中的多個第二電漿調整部，且具有配置於該第二EM能量調整空間之中的多個第二EM調整部，其中一第三EM調整部係連結至一第三EM耦合區域，且一第四EM調整部係連結至一第四EM耦合區域；及 　　一控制器，連結至該第一腔組件及該第二腔組件，其中該控制器建構成控制在該第一EM能量調整空間中的該第一對EM耦合區域與在該第二EM能量調整空間中的該第二對EM耦合區域，藉以控制在該製程空間中的電漿均勻性。A microwave processing system for processing a substrate, the microwave processing system comprising a process chamber including a process space for processing one of the substrates; a first cavity assembly coupled to the process chamber by a first interface component The first cavity assembly has a first electromagnetic (EM) energy adjustment space therein, the first interface component includes a first isolation component, wherein a first pair of EM coupling regions is established in the first EM energy adjustment a first pair of plasma adjustment rods coupled to the first isolation assembly, the first pair of plasma adjustment rods having a plurality of plasma adjustment portions disposed in the process space, and having a plurality of EM adjustment portions of the first EM energy adjustment space, wherein a first EM adjustment portion is coupled to a first EM coupling region, and a second EM adjustment portion is coupled to a second EM coupling region; a second chamber assembly is coupled to the process chamber by a second interface assembly, the second chamber assembly having a second EM energy adjustment space therein, the second interface assembly including a second isolation a second pair of EM coupling regions are established in the second EM energy adjustment space; a second pair of plasma adjustment bars coupled to the second isolation component, the second pair of plasma adjustment bars having a configuration a plurality of second plasma adjusting portions in the processing space, and a plurality of second EM adjusting portions disposed in the second EM energy adjusting space, wherein a third EM adjusting portion is coupled to the first a third EM coupling region, and a fourth EM adjustment portion is coupled to a fourth EM coupling region; and a controller coupled to the first cavity component and the second cavity component, wherein the controller is configured to be controlled The first pair of EM coupling regions in the first EM energy adjustment space and the second pair of EM coupling regions in the second EM energy adjustment space are used to control plasma uniformity in the process space. 如申請專利範圍第10項的微波處理系統，更包含： 　　一第一耦合網路，連結至該第一腔組件； 　　一第一匹配網路，連結至該第一耦合網路； 　　一第一EM來源，連結至該第一匹配網路，其中該第一EM來源係建構成操作於自500 MHz到5000 MHz之頻率範圍，其中該控制器係連結至該第一EM來源，且建構成控制該第一EM來源，藉此控制在該製程空間之中的電漿均勻性； 　　一第二耦合網路，連結至該第二腔組件； 　　一第二匹配網路，連結至該第二耦合網路；及 　　一第二EM來源，連結至該第二匹配網路，其中該第二EM來源建構成操作於自500 MHz到5000 MHz的第二頻率範圍，其中該控制器係連結至該第二EM來源，且建構成控制該第二EM來源，藉此控制在該製程空間之中的電漿均勻性。The microwave processing system of claim 10, further comprising: a first coupling network coupled to the first cavity component; a first matching network coupled to the first coupling network; a first EM a source, coupled to the first matching network, wherein the first EM source system is configured to operate in a frequency range from 500 MHz to 5000 MHz, wherein the controller is coupled to the first EM source and configured to control the a first EM source, thereby controlling plasma uniformity in the process space; a second coupling network coupled to the second cavity component; a second matching network coupled to the second coupling network And a second EM source coupled to the second matching network, wherein the second EM source is configured to operate in a second frequency range from 500 MHz to 5000 MHz, wherein the controller is coupled to the second EM The source, and the composition, controls the second EM source, thereby controlling plasma uniformity in the process space. 如申請專利範圍第10項的微波處理系統，更包含： 　　一第一對電漿調整板，配置在該第一EM能量調整空間之中鄰近於該第一EM耦合區域； 　　一第一對控制組件，通過一第一腔組件壁連結至該第一對電漿調整板，一第一電漿調整板係藉由一第一控制組件而被置放於自該第一EM調整部之第一EM耦合距離處； 　　一第二電漿調整板，藉由一第二控制組件而被置放於自該第二EM調整部之第二EM耦合距離處，其中該控制器係連結至該第一控制組件和該第二控制組件，該控制器建構成控制該第一EM耦合距離和該第二EM耦合距離，藉以控制在該製程空間中的電漿均勻性； 　　一第二對電漿調整板，配置在該第二EM能量調整空間之中鄰近於該第二EM耦合區域； 　　一第二對控制組件，通過一第二腔組件壁連結至該第二對電漿調整板，一第三電漿調整板係藉由一第三控制組件而被置放於自該第三EM調整部之第三EM耦合距離處；及 　　一第四電漿調整板係藉由一第四控制組件而被置放於自該第四EM調整部之第四EM耦合距離處，其中該控制器係連結至該第三控制組件及第四控制組件，且該控制器建構成控制該第三EM耦合距離及該第四EM耦合距離，藉以控制在該製程空間中的電漿均勻性。The microwave processing system of claim 10, further comprising: a first pair of plasma adjustment plates disposed adjacent to the first EM coupling region in the first EM energy adjustment space; a first pair of control components Connected to the first pair of plasma adjustment plates through a first cavity assembly wall, a first plasma adjustment plate is placed in the first EM from the first EM adjustment portion by a first control component a second plasma adjustment plate is disposed at a second EM coupling distance from the second EM adjustment portion by a second control component, wherein the controller is coupled to the first control And a second control component, the controller is configured to control the first EM coupling distance and the second EM coupling distance to control plasma uniformity in the process space; a second pair of plasma adjustment plates, Arranged in the second EM energy adjustment space adjacent to the second EM coupling region; a second pair of control components coupled to the second pair of plasma conditioning plates through a second cavity assembly wall, a third plasma Adjusting the board by a third The component is placed at a third EM coupling distance from the third EM adjustment portion; and a fourth plasma adjustment panel is placed in the fourth EM adjustment portion by a fourth control component a fourth EM coupling distance, wherein the controller is coupled to the third control component and the fourth control component, and the controller is configured to control the third EM coupling distance and the fourth EM coupling distance, thereby controlling Plasma uniformity in the process space. 如申請專利範圍第10項的微波處理系統，更包含： 　　一氣體噴淋頭，連結至該製程腔室； 　　一氣體供給次組件，連結至該氣體噴淋頭；及 　　一氣體供給系統，連結至該氣體供給次組件，其中該氣體噴淋頭係建構成用以將製程氣體導入該製程空間，其中該控制器連結至該氣體供給系統、該氣體供給次組件、及該氣體噴淋頭，且建構成控制該氣體供給系統、該氣體供給次組件、及該氣體噴淋頭，藉以控制在該製程空間中的電漿均勻性。The microwave processing system of claim 10, further comprising: a gas shower head coupled to the process chamber; a gas supply subassembly coupled to the gas shower head; and a gas supply system coupled to The gas is supplied to the subassembly, wherein the gas shower head is configured to introduce a process gas into the process space, wherein the controller is coupled to the gas supply system, the gas supply subassembly, and the gas shower head, and The composition controls the gas supply system, the gas supply subassembly, and the gas shower head to control plasma uniformity in the process space. 一種基板處理方法，利用一微波處理系統處理基板，該方法包含： 　　將一基板置放於一製程腔室之中的一製程空間之內； 　　利用一介面組件將一個以上腔組件連結至該製程腔室，該一個以上腔組件具有EM能量調整空間於其中，該介面組件包含一組隔離組件，其中將一組EM耦合區域建立在該等EM能量調整空間之中； 　　將一組電漿調整桿連結至該組隔離組件，該組電漿調整桿具有一組電漿調整部及一組EM調整部，該組電漿調整部係建構在該製程空間之中，該組EM調整部係建構在該等EM能量調整空間之中且連結至該組EM耦合區域其中至少一者； 　　將一控制器連結至該一個以上腔組件，其中該控制器係用以控制在該等EM能量調整空間之中的該組EM耦合區域，藉此控制在該製程空間之中的電漿均勻性。A substrate processing method for processing a substrate by using a microwave processing system, the method comprising: placing a substrate in a process space in a process chamber; and connecting one or more cavity components to the process chamber by using an interface component a chamber having an EM energy adjustment space therein, the interface assembly including a set of isolation components, wherein a set of EM coupling regions are established in the EM energy adjustment spaces; a set of plasma adjustment rods are coupled To the group of isolation components, the set of plasma adjustment rods has a set of plasma adjustment sections and a set of EM adjustment sections, the set of plasma adjustment sections being constructed in the process space, the set of EM adjustment sections being constructed And an EM energy adjustment space and coupled to at least one of the set of EM coupling regions; coupling a controller to the one or more cavity components, wherein the controller is configured to control the EM energy adjustment space The set of EM coupling regions thereby control plasma uniformity in the process space. 如申請專利範圍第14項的基板處理方法，更包含： 　　將一個以上耦合網路連接至該一個以上腔組件； 　　將一匹配網路連接至該一個以上耦合網路每一者； 　　將一EM來源連接至該匹配網路，其中該EM來源係建構成操作於自500 MHz至5000 MHz的頻率範圍，其中該控制器係連結至該EM來源且用以控制該EM來源，藉此控制在該製程空間之中的電漿均勻性。The substrate processing method of claim 14, further comprising: connecting more than one coupling network to the one or more cavity components; connecting a matching network to each of the one or more coupling networks; Connected to the matching network, wherein the EM source system is configured to operate in a frequency range from 500 MHz to 5000 MHz, wherein the controller is coupled to the EM source and used to control the EM source, thereby controlling the process Plasma uniformity in space. 如申請專利範圍第14項的基板處理方法，其中將該一個以上腔組件連結至該製程腔室的步驟包含： 　　將第一和第二腔組件連結至該製程腔室，其中該組隔離組件包含第一隔離組件和第二隔離組件，且其中該組EM耦合區域包含第一EM耦合區域和第二EM耦合區域；及 　　控制在該等EM能量調整空間之中的該等第一和第二EM耦合區域，藉此控制在該製程空間之中的電漿均勻性。The substrate processing method of claim 14, wherein the step of joining the one or more cavity components to the process chamber comprises: joining the first and second cavity components to the process chamber, wherein the set of isolation components comprises a first isolation component and a second isolation component, and wherein the set of EM coupling regions includes a first EM coupling region and a second EM coupling region; and controlling the first and second EMs among the EM energy adjustment spaces A coupling region whereby the plasma uniformity in the process space is controlled. 如申請專利範圍第14項的基板處理方法，更包含： 　　將一氣體噴淋頭連結至該製程腔室； 　　將一氣體供給次組件連結至該氣體噴淋頭；及 　　將一氣體供給系統連結至該氣體供給次組件，其中該氣體噴淋頭係用以將製程氣體導入該製程空間，其中該控制器係連結至該氣體供給系統、該氣體供給次組件、及該氣體噴淋頭且用以控制該氣體供給系統、該氣體供給次組件、及該氣體噴淋頭，藉此控制在該製程空間之中的電漿均勻性。The substrate processing method of claim 14, further comprising: connecting a gas shower head to the process chamber; connecting a gas supply subassembly to the gas shower head; and connecting a gas supply system to the gas supply system The gas is supplied to the subassembly, wherein the gas shower head is configured to introduce a process gas into the process space, wherein the controller is coupled to the gas supply system, the gas supply subassembly, and the gas shower head and The gas supply system, the gas supply subassembly, and the gas shower head are controlled to thereby control plasma uniformity in the process space. 如申請專利範圍第17項的基板處理方法，其中該製程氣體包含C₄ F₈ 、C₅ F₈ 、C₃ F₆ 、C₄ F₆ 、CF₄ 、CHF₃ 、CH₂ F₂ 、惰性氣體、氧、CO、及CO₂ 其中二者以上。The substrate processing method of claim 17, wherein the process gas comprises C ₄ F ₈ , C ₅ F ₈ , C ₃ F ₆ , C ₄ F ₆ , CF ₄ , CHF ₃ , CH ₂ F ₂ , an inert gas , oxygen, CO, and CO ₂ of two or more. 如申請專利範圍第17項的基板處理方法，其中該製程氣體包含HBr、Cl₂ 、NF₃ 、SF₆ 、CHF₃ 、CH₂ F₂ 、惰性氣體、氧、CO、及CO₂ 其中二者以上。The substrate processing method of claim 17, wherein the process gas comprises HBr, Cl ₂ , NF ₃ , SF ₆ , CHF ₃ , CH ₂ F ₂ , inert gas, oxygen, CO, and CO _{2 .} . 如申請專利範圍第14項的基板處理方法，更包含： 　　在該一個以上腔組件的各個EM能量調整空間之中配置一腔調整板； 　　將一腔控制組件連結至各腔調整板，其中該腔調整板係定位成距離該腔組件的一壁一腔調整距離，其中該控制器係連結至該腔控制組件且用以控制該腔調整距離，藉此控制在該製程空間之中的電漿均勻性。The substrate processing method of claim 14, further comprising: arranging a cavity adjustment plate in each EM energy adjustment space of the one or more cavity components; and coupling a cavity control component to each cavity adjustment plate, wherein the cavity The adjustment plate is positioned to be adjusted from a wall to a cavity of the cavity assembly, wherein the controller is coupled to the cavity control assembly and configured to control the cavity to adjust the distance, thereby controlling plasma uniformity in the process space Sex.